High quality atomically thin PtSe2 films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Substrate Dependent Ad-Atom Migration on Graphene and the Impact on Electron-Beam Sculpting Functional Nanopores.

PubMed

Freedman, Kevin J; Goyal, Gaurav; Ahn, Chi Won; Kim, Min Jun

2017-05-10

The use of atomically thin graphene for molecular sensing has attracted tremendous attention over the years and, in some instances, could displace the use of classical thin films. For nanopore sensing, graphene must be suspended over an aperture so that a single pore can be formed in the free-standing region. Nanopores are typically drilled using an electron beam (e-beam) which is tightly focused until a desired pore size is obtained. E-beam sculpting of graphene however is not just dependent on the ability to displace atoms but also the ability to hinder the migration of ad-atoms on the surface of graphene. Using relatively lower e-beam fluxes from a thermionic electron source, the C-atom knockout rate seems to be comparable to the rate of carbon ad-atom attraction and accumulation at the e-beam/graphene interface (i.e., R knockout ≈ R accumulation ). Working at this unique regime has allowed the study of carbon ad-atom migration as well as the influence of various substrate materials on e-beam sculpting of graphene. We also show that this information was pivotal to fabricating functional graphene nanopores for studying DNA with increased spatial resolution which is attributed to atomically thin membranes.

Soft X-ray Spectrometer for Characterization of Electron Beam Driven WDM

NASA Astrophysics Data System (ADS)

Ramey, Nicholas; Coleman, Joshua; Perry, John

2017-10-01

A preliminary design study is being performed on a soft X-ray spectrometer to measure K-shell spectra emitted by a warm dense plasma generated by an intense, relativistic electron beam interacting with a thin, low-Z metal foil. A 100-ns-long electron pulse with a beam current of 1.7 kA and energy of 19.8 MeV deposits energy into the thin metal foil heating it to a warm dense plasma. The collisional ionization of the target by the electron beam produces an anisotropic angular distribution of K-shell radiation and a continuum of both scattered electrons and Bremsstrahlung up to the beam energy of 19.8 MeV. A proof-of-principle Bragg-type spectrometer has been built to measure the Ti K- α and K- β lines. The goal of the spectrometer is to measure the temperature and density of this warm dense plasma for the first time with this heating technique. This work was supported by the National Nuclear Security Administration of the U.S. Department of Energy under Contract No. DE-AC52-06NA25396.

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.

PubMed

Shin, Joong-Hyeok; Woo, Hee-Gweon; Kim, Bo-Hye; Lee, Byung Cheol; Jun, Jin

2010-05-01

Pt nanoparticle-doped titanium dioxide (Pt/TiO2) thin films were prepared on a silicon wafer substrate by sol-gel spin coating process. The prepared thin films were treated with electron beam (EB at 1.1 MeV, 100, 200, 300 kGy) at air atmosphere. The effect of EB-irradiation on the composition of the treated thin films, optical properties and morphology of thin films were investigated by various analytical techniques such as X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The crystal structure of the TiO2 layer was found to be an anatase phase and the size of TiO2 particles was determined to be about 13 nm. Pt nanoparticles with diameter of 5 nm were observed on surface of the films. A new layer (presumed to be Pt-Ti complex and/or PtO2 compound) was created in the Pt/TiO2 thin film treated with EB (300 kGy). The transmittance of thin film decreased with EB treatment whereas the refractive index increased.

Reflex Triode X-Ray Source Research on Gamble

DTIC Science & Technology

2007-06-01

dosimeters ( TLDs ) located at the vacuum window (18-27 cm from the converter), near the pinhole camera and near the image plate. II. EXPERIMENTAL...MeV- electron beams to thin converters in order to optimize emission of sub-100- keV x-rays. Thin converters reduce self-absorption of low-energy...x-rays, but the beam electrons must pass many times through the converter for efficient x-ray production. The triode configuration was found to be

Millimeter-Wave Generation with Spiraling Electron Beams

DOT National Transportation Integrated Search

1971-02-01

An investigation has been carried out of the feasibility : of using the interaction between a thin, solid, : spiraling electron beam of 10-20kV energy and a microwave : cavity to generate watts of CW millimeter-wave power. : Experimental results are ...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Pragya; Srivastava, A. K.; Khattak, B. Q.

Polymethyl methacrylate (PMMA) is characterized for electron beam interactions in the resist layer in lithographic applications. PMMA thin films (free standing) were prepared by solvent casting method. These films were irradiated with 30keV electron beam at different doses. Structural and chemical properties of the films were studied by means of X-ray diffraction and Fourier transform infra-red (FTIR) spectroscopy The XRD results showed that the amorphization increases with electron beam irradiation dose. FTIR spectroscopic analysis reveals that electron beam irradiation promotes the scission of carbonyl group and depletes hydrogen and converts polymeric structure into hydrogen depleted carbon network.

Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

PubMed Central

Jeon, Jin-Woo; Choi, Wonsuk; Shin, Young-Gwan; Ji, Suk-Young

2018-01-01

In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO) thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively. PMID:29601515

Rigid thin windows for vacuum applications

DOEpatents

Meyer, Glenn Allyn; Ciarlo, Dino R.; Myers, Booth Richard; Chen, Hao-Lin; Wakalopulos, George

1999-01-01

A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.

A Thick Target for Synchrotrons and Betatrons

DOE R&D Accomplishments Database

McMillan, E. M.

1950-09-19

If a wide x-ray beam from an electron synchrotron or betatron is desired, in radiographic work with large objects for example, the usually very thin target may be replaced by a thick one, provided the resulting distortion of the x-ray spectrum due to multiple radiative processes is permissible. It is difficult to make the circulating electron beam traverse a thick target directly because of the small spacing between successive turns. Mounting a very thin beryllium, or other low-z material, fin on the edge of the thick target so that the fin projects into the beam will cause the beam to lose sufficient energy, and therefore radium, to strike the thick target the next time around. Sample design calculations are given.

Electron beam crystallization of Te 1-xSe x films

NASA Astrophysics Data System (ADS)

Vermaak, J. S.; Raubenheimer, D.

1987-11-01

In situ transmission electron microscopy has been used to study the effect of high energy electrons on the amorphous-to-crystalline phase transformation, the isothermal growth rates, as well as the structure and orientation of the recrystallized Te 0.7Se 0.3 thin films. It is shown that the beam effect is not a pure thermal effect. It is proposed that the electron beam initiates nucleation and promotes growth by the interaction of the high energy electrons with the van der Waals type bonds between the short composite Te-Se chains.

In situ TEM study of electron-beam radiation induced boron diffusion and effects on phase and microstructure evolution in nanostructured CoFeB/SiO2 thin film

NASA Astrophysics Data System (ADS)

Liu, B. H.; Teo, H. W.; Mo, Z. H.; Mai, Z. H.; Lam, J.; Xue, J. M.; Zhao, Y. Z.; Tan, P. K.

2017-01-01

Using in situ transmission electron microscopy (TEM), we studied boron diffusion and segregation in CoFeB/SiO2 nanostructured thin film stacks. We also investigated how these phenomena affected the phase and microstructure of CoFeB thin films under electron beam irradiation at 300 kV. A unique phase transformation was observed in CoFeB thin films under high-dose electron irradiation, from a polycrystalline Co3Fe to a unilateral amorphous phase of Co3Fe and nanocrystalline FexCo23-xB6. The unilateral amorphization of the Co3Fe film showed an electron-dose-rate sensitivity with a threshold dose rate. Detailed in situ TEM studies revealed that the unilateral amorphization of the Co3Fe film arose from boron segregation at the bottom of the Co3Fe thin film induced by radiation-enhanced diffusion of boron atoms that were displaced by electron knock-on effects. The radiation-induced nanocrystallization of FexCo23-xB6 was also found to be dose-rate sensitive with a higher electron beam current leading to earlier nucleation and more rapid grain growth. The nanocrystallization of FexCo23-xB6 occurred preferentially at the CoFeB/SiO2 interface. Kinetic studies by in situ TEM revealed the surface crystallization and diffusion-controlled nucleation and grain growth mechanisms. The radiation-enhanced atomic diffusivity and high-concentration of radiation-induced point defects at the Co3Fe/SiO2 interface enhanced the local short-range ordering of Fe, Co, and B atoms, favoring nucleation and grain growth of FexCo23-xB6 at the interface.

Cross-sectional TEM specimen preparation for W/B{sub 4}C multilayer sample using FIB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Puspen, E-mail: puspen@rrcat.gov.in; Pradhan, P. C.; Tiwari, Pragya

2016-05-23

A recent emergence of a cross-beam scanning electron microscopy (SEM)/focused-ion-beam (FIB) system have given choice to fabricate cross-sectional transmission electron microscopy (TEM) specimen of thin film multilayer sample. A 300 layer pair thin film multilayer sample of W/B{sub 4}C was used to demonstrate the specimen lift-out technique in very short time as compared to conventional cross-sectional sample preparation technique. To get large area electron transparent sample, sample prepared by FIB is followed by Ar{sup +} ion polishing at 2 kV with grazing incident. The prepared cross-sectional sample was characterized by transmission electron microscope.

Cathodoluminescent characteristics and light technical parameters of thin-film screens based on oxides and oxysulfides of rare-earth elements

NASA Astrophysics Data System (ADS)

Bondar, Vyacheslav D.; Grytsiv, Myroslav; Groodzinsky, Arkady; Vasyliv, Mykhailo

1995-11-01

Results on creation of thin-film single-crystal high-resolution screens with energy control of luminescence color are presented. In order to create phosphor films ion-plasma technology for deposition of yttrium and lanthanum oxides and oxysulfides activated by rare earth elements has been developed. The screen consists of phosphor film on phosphor substrate with different colors of luminescence (e.g. Y2O3-Eu film with red color on Y3Al5O12- Tb, Ce substrate with green color of luminescence). Electron irradiation causes luminescence with color that depends on energy of the electron beam. The physical reason for color change is that electron beam energy defines electron penetration depth. If the energy is weak, only the film is excited. More powerful beam penetrates into the substrate and thus changes the color of luminescence.

Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Moon, Hye Ji; Ryu, Min Ki; Cho, Kyoung Ik; Yun, Eui-Jung; Bae, Byung Seong

2012-09-01

Under white light illumination, amorphous indium-gallium-zinc oxide (a-IGZO)-based thin-film transistors (TFTs) showed a large negative shift of threshold voltage of more than -15 V depending on the process conditions. We investigated the influences of both gate bias and white light illumination on device properties of IGZO-based TFTs untreated and treated with high-energy electron beam irradiation (HEEBI). The TFTs were treated with HEEBI in air at room temperature (RT), electron beam energy of 0.8 MeV, and a dose of 1×1014 electrons/cm2. The HEEBI-treated TFTs showed an improved stability under negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS) compared with non-HEEBI-treated TFTs, suggesting that the acceptor-like defects might be generated by HEEBI treatment near the valence band edge.

MULTIPLE ELECTRON BEAM ION PUMP AND SOURCE

DOEpatents

Ellis, R.E.

1962-02-27

A vacuum pump is designed which operates by ionizing incoming air and by withdrawing the ions from the system by means of electrical fields. The apparatus comprises a cylindrical housing communicable with the vessel to be evacuated and having a thin wall section in one end. Suitable coils provide a longitudinal magnetic field within the cylinder. A broad cathode and an anode structure is provided to establish a plurality of adjacent electron beams which are parallel to the cylinder axis. Electron reflector means are provided so that each of the beams constitutes a PIG or reflex discharge. Such structure provides a large region in which incoming gas molecules may be ionized by electron bombardment. A charged electrode assembly accelerates the ions through the thin window, thereby removing the gas from the system. The invention may also be utilized as a highly efficient ion source. (AEC)

Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

NASA Astrophysics Data System (ADS)

Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

2015-08-01

Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed.

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

PubMed

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

A study on the radiation resistance of CdWO4 thin-film scintillators deposited by using an electron-beam physical vapor deposition method

NASA Astrophysics Data System (ADS)

Park, Seyong; Yoon, Young Soo

2016-09-01

In this paper, we report the first successful fabrication of CdWO4 thin film scintillators deposited on quartz glass substrates by using an electron-beam physical vapor deposition method. The films were dense, uniform, and crack-free. CdWO4 thin-film samples of varying thicknesses were investigated by using structural and optical characterization techniques. An optimized thickness for the CdWO4 thin-film scintillators was discovered. The scintillation and the optical properties were found to depend strongly on the annealing process. The annealing process resulted in thin films with a distinct crystal structure and with improved transparency and scintillation properties. For potential applications in gamma-ray energy storage systems, photoluminescence measurements were performed using gamma rays at a dose rate of 10 kGy h-1.

Amorphization induced by focused ion beam milling in metallic and electronic materials.

PubMed

Huh, Yoon; Hong, Ki Jung; Shin, Kwang Soo

2013-08-01

Focused ion beam (FIB) milling using high-energy gallium ions is widely used in the preparation of specimens for transmission electron microscopy (TEM). However, the energetic ion beam induces amorphization on the edge of specimens during milling, resulting in a mischievous influence on the clearness of high-quality transmission electron micrographs. In this work, the amorphization induced by the FIB milling was investigated by TEM for three kinds of materials, metallic materials in bulk shape, and semiconductive and electronic ceramic materials as a substrate for the deposition of thin films.

The Effect of Gas Ion Bombardment on the Secondary Electron Yield of TiN, TiCN and TiZrV Coatings For Suppressing Collective Electron Effects in Storage Rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Pimpec, F.; /PSI, Villigen; Kirby, R.E.

In many accelerator storage rings running positively charged beams, ionization of residual gas and secondary electron emission (SEE) in the beam pipe will give rise to an electron cloud which can cause beam blow-up or loss of the circulating beam. A preventative measure that suppresses electron cloud formation is to ensure that the vacuum wall has a low secondary emission yield (SEY). The SEY of thin films of TiN, sputter deposited Non-Evaporable Getters and a novel TiCN alloy were measured under a variety of conditions, including the effect of re-contamination from residual gas.

Electron beam induced damage in ITO coated Kapton. [Indium Tin Oxide

NASA Technical Reports Server (NTRS)

Krainsky, I.; Gordon, W. L.; Hoffman, R. W.

1981-01-01

Data for the stability of thin conductive indium tin oxide films on 0.003 inch thick Kapton substrates during exposure of the surface to electron beams are reported. The electron beam energy was 3 keV and the diameter was about 0.8 mm. Thermal effects and surface modifications are considered. For primary current greater than 0.6 microamperes, an obvious dark discoloration with diameter approximately that of the beam was produced. The structure of the discolored region was studied with the scanning electron microscope, and the findings are stated. Surface modifications were explored by AES, obtaining spectra and secondary emission coefficient as a function of time for different beam intensities. In all cases beam exposure results in a decrease of the secondary yield but because of thermal effects this change, as well as composition changes, cannot be directly interpreted in terms of electron beam dosage.

Cluster Beam Studies.

DTIC Science & Technology

1988-04-01

Continue on reverse if necessary and identify by block number) Cluster beams offer a means of depositing high-quality thin films at low...either directly inclustered vapors of nonvolatile materials or Indirectly by bombarding the film duringdeposition with clusters of inert gases. When a...electron volt energy per atom. The suprathermal energy of thej depositing atoms is thought to produce unique thin films (either in quality, or in the ability

Development of high damage threshold multilayer thin film beam combiner for laser application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nand, Mangla, E-mail: mnand@rrcat.gov.in; Babita,; Jena, S.

2016-05-23

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Development of high damage threshold multilayer thin film beam combiner for laser application

NASA Astrophysics Data System (ADS)

Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

2016-05-01

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Modelling of pulsed electron beam induced graphite ablation: Sublimation versus melting

NASA Astrophysics Data System (ADS)

Ali, Muddassir; Henda, Redhouane

2017-12-01

Pulsed electron beam ablation (PEBA) has recently emerged as a very promising technique for the deposition of thin films with superior properties. Interaction of the pulsed electron beam with the target material is a complex process, which consists of heating, phase transition, and erosion of a small portion from the target surface. Ablation can be significantly affected by the nature of thermal phenomena taking place at the target surface, with subsequent bearing on the properties, stoichiometry and structure of deposited thin films. A two stage, one-dimensional heat conduction model is presented to describe two different thermal phenomena accounting for interaction of a graphite target with a polyenergetic electron beam. In the first instance, the thermal phenomena are comprised of heating, melting and vaporization of the target surface, while in the second instance the thermal phenomena are described in terms of heating and sublimation of the graphite surface. In this work, the electron beam delivers intense electron pulses of ∼100 ns with energies up to 16 keV and an electric current of ∼400 A to a graphite target. The temperature distribution, surface recession velocity, ablated mass per unit area, and ablation depth for the graphite target are numerically simulated by the finite element method for each case. Based on calculation findings and available experimental data, ablation appears to occur mainly in the regime of melting and vaporization from the surface.

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-Ray Microcalorimeter

NASA Technical Reports Server (NTRS)

Finkbeiner, Fred Michael; Adams, Joseph S.; Bandler, Simon R.; Betancour-Martinez, Gabriele L.; Brown, Ari David; Chang, Meng-Ping; Chervenak, James A.; Chiao, Meng P.; Datesman, Aaron; Eckart, Megan E.;

Digital electron diffraction – seeing the whole picture

PubMed Central

Beanland, Richard; Thomas, Paul J.; Woodward, David I.; Thomas, Pamela A.; Roemer, Rudolf A.

2013-01-01

The advantages of convergent-beam electron diffraction for symmetry determination at the scale of a few nm are well known. In practice, the approach is often limited due to the restriction on the angular range of the electron beam imposed by the small Bragg angle for high-energy electron diffraction, i.e. a large convergence angle of the incident beam results in overlapping information in the diffraction pattern. Techniques have been generally available since the 1980s which overcome this restriction for individual diffracted beams, by making a compromise between illuminated area and beam convergence. Here a simple technique is described which overcomes all of these problems using computer control, giving electron diffraction data over a large angular range for many diffracted beams from the volume given by a focused electron beam (typically a few nm or less). The increase in the amount of information significantly improves the ease of interpretation and widens the applicability of the technique, particularly for thin materials or those with larger lattice parameters. PMID:23778099

Structural changes in graphene oxide thin film by electron-beam irradiation

NASA Astrophysics Data System (ADS)

Tyagi, Chetna; Lakshmi, G. B. V. S.; Kumar, Sunil; Tripathi, Ambuj; Avasthi, D. K.

2016-07-01

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 1011 to 2 × 1013 e-/cm2. Our studies using X-ray diffraction, Raman microscopy and UV-Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Kapton charging characteristics: Effects of material thickness and electron-energy distribution

NASA Technical Reports Server (NTRS)

Williamson, W. S.; Dulgeroff, C. R.; Hymann, J.; Viswanathan, R.

1985-01-01

Charging characteristics of polyimide (Kapton) of varying thicknesses under irradiation by a very-low-curent-density electron beam, with the back surface of the sample grounded are reported. These charging characteristics are in good agreement with a simple analytical model which predicts that in thin samples at low current density, sample surface potential is limited by conduction leakage through the bulk material. The charging of Kapton in a low-current-density electron beam in which the beam energy was modulated to simulate Maxwellian and biMaxwellian distribution functions is measured.

Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

NASA Astrophysics Data System (ADS)

Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

2018-03-01

We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

DOEpatents

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Synthesis of metal nanoparticle and patterning in polymeric films induced by electron beam

NASA Astrophysics Data System (ADS)

Yamamoto, Hiroki; Kozawa, Takahiro; Tagawa, Seiichi; Marignier, Jean-Louis; Mostafavi, Mehran; Belloni, Jacqueline

2018-03-01

Using an electron beam, thin polymeric films loaded with metal nanoparticles of silver were prepared by a one-step irradiation-induced reduction of the metal ions embedded in the polymer. The metal nanoparticles were observed by either optical absorption or microscopy. The mechanism of the reduction of metal ions and of the polymer crosslinking were deduced from the average absorbance measurements. In view of realizing specific patterns of high resolution using the electron beam, electron beam produces 200 nm wide lines that can be separated by unexposed spaces of adjustable width, where precursors were dissolved. The resolution of the electron beam has been exploited to demonstrate the achievement of nanopatterning on polymer films using a direct-writing process. This method supplies interesting applications such as masks, replicas, or imprint molds of improved density and contrast.

Cometary particles - Thin sectioning and electron beam analysis

NASA Technical Reports Server (NTRS)

Bradley, J. P.; Brownlee, D. E.

1986-01-01

Thin sections (500 to 1000 angstroms thick) of individual micrometeorites (5 to 15 micrometers) have been prepared with an ultramicrotome equipped with a diamond knife. Electron microscope examination of these sections has revealed the internal structures of chondritic micrometeorites, and a subset of highly porous, fragile particles has been identified. Delicate meteoritic materials such as these are characteristic of debris from cometary meteors.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S _o for the thin films were determined and presented in this work.

Focussed ion beam thin sample microanalysis using a field emission gun electron probe microanalyser

NASA Astrophysics Data System (ADS)

Kubo, Y.

2018-01-01

Field emission gun electron probe microanalysis (FEG-EPMA) in conjunction with wavelength-dispersive X-ray spectrometry using a low acceleration voltage (V acc) allows elemental analysis with sub-micrometre lateral spatial resolution (SR). However, this degree of SR does not necessarily meet the requirements associated with increasingly miniaturised devices. Another challenge related to performing FEG-EPMA with a low V acc is that the accuracy of quantitative analyses is adversely affected, primarily because low energy X-ray lines such as the L- and M-lines must be employed and due to the potential of line interference. One promising means of obtaining high SR with FEG-EPMA is to use thin samples together with high V acc values. This mini-review covers the basic principles of thin-sample FEG-EPMA and describes an application of this technique to the analysis of optical fibres. Outstanding issues related to this technique that must be addressed are also discussed, which include the potential for electron beam damage during analysis of insulating materials and the development of methods to use thin samples for quantitative analysis.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kirubaharan, A. Kamalan; Kuppusami, P.; Singh, Akash; Dharini, T.; Ramachandran, D.; Mohandas, E.

2015-06-01

Yttria stabilized zirconia (10 mole % Y2O3) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 - 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ˜5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahul, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Vishwakarma, S. R., E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Verma, Aneet Kumar, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com

2011-10-20

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors.

PubMed

Matsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Krüger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M; Bird, Jonathan P; Aoki, Nobuyuki

2016-10-05

Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS 2 ), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS 2 . Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS 2 bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations. A nanoscale potential barrier develops at the boundary between exposed and unexposed regions and may cause extrinsic variations in the resulting electrical characteristics exhibited by the transistor. The widespread use of electron-beam lithography in nanofabrication implies that the presence of such strain must be carefully considered when seeking to harness the potential of atomically thin transistors. At the same time, this work also promises the possibility of exploiting the strain as a means to achieve "bandstructure engineering" in such devices.

Stability properties of a thin relativistic beam propagation in a magnetized plasma

NASA Astrophysics Data System (ADS)

Jovanović, Dušan; Fedele, Renato; Belić, Milivoj; De Nicola, Sergio; Akhter, Tamina

2018-05-01

A self-consistent nonlinear hydrodynamic theory is presented of the propagation of a long and thin relativistic electron beam through a plasma that is relatively strongly magnetized. Such situation is encountered when the gyro-frequency is comparable to the plasma frequency, i.e. |Ω e | ω pe . In addition, it is assumed the plasma density is much bigger than that of the beam. In the regime when the solution propagates in the comoving frame with a velocity that is much smaller than the thermal speed, a nonlinear stationary beam structure is found in which the electron motion in the transverse direction is negligible and whose transverse localization comes from the nonlinearity associated with its 3-D adiabatic expansion. Conversely, when the parallel velocity of the structure is sufficiently large to prevent the heat convection along the magnetic field, a helicoidally shaped stationary solution is found that is governed by the transverse convective nonlinearity. The profile of such beam is determined from a nonlinear dispersion relation and depends on the transverse size of the beam and its pitch angle to the magnetic field.

Structural and Optical Properties of Cd 1- x Se x Thin Films Deposited by Electron Beam Evaporation Technique

NASA Astrophysics Data System (ADS)

Tripathi, Ravishankar Nath; Verma, Aneet Kumar; Rahul, Vishwakarma, S. R.

2011-10-01

Cadmium selenide (CdSe) thin films deposited by means of electron beam evaporation technique under high vacuum ˜10 -5 torr on ultrasonically cleaned glass substrate. Using stating materials of various compositions of cadmium and selenium using formula Cd 1- x Se x where x is orbitory constant having value 0.20≤ x ≤0.40 here we take less value of x for the creation of anion vacancy in thin films. In present work the structural properties have been studies using XRD technique and found that starting materials and thin films both are polycrystalline in nature having hexagonal structure. Here we study the effect of composition ratio Cd/Se in starting material and its prepared thin films on its grain size and lattice parameter. From the analysis of X-Ray diffractogram found that lattice parameter and grain size both are decreases with increasing Cd/Se ratio in thin films as well as in starting material the preferred orientation in thin films along (100) plane. The surface morphology was studied using SEM characterization and found that films are smooth and homogeneous. The films have been analysed for optical band gap and absorbed a direct band gap.

Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

NASA Astrophysics Data System (ADS)

Andreev, Andrey

2005-10-01

The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

PubMed

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorut, F.; Imbert, G.; Roggero, A.

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, withmore » a densification of the layer and a loss of carbon and hydrogen elements being observed.« less

Two-dimensional electron beam charging model for polymer films

NASA Technical Reports Server (NTRS)

Reeves, R. D.; Balmain, K. G.

1981-01-01

A two-dimensional model is developed to describe the charging of strips of thin polymer films above a grounded substrate exposed to a uniform mono-energetic electron beam. The study is motivated by the observed anomalous behavior of geosynchronous satellites, which has been attributed to differential charging of the satellite surfaces exposed to magnetospheric electrons. Surface and bulk electric fields are calcuated at steady state in order to identify regions of high electrical stress, with emphasis on behavior near the material's edge. The model is used to study the effects of some of the experimental parameters, notably beam energy, beam angle of incidence, beam current density, material thickness and material width. Also examined are the consequences of a central gap in the material and a discontinuity in the material thickness.

Mechanical design of thin-film diamond crystal mounting apparatus for coherence preservation hard x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming, E-mail: shu@aps.anl.gov; Shvyd’ko, Yuri V.; Stoupin, Stanislav

2016-07-27

A new thin-film diamond crystal mounting apparatus has been designed at the Advanced Photon Source (APS) for coherence preservation hard x-ray optics with optimized thermal contact and minimized crystal strain. This novel mechanical design can be applied to new development in the field of: x-ray optics cavities for hard x-ray free-electron laser oscillators (XFELOs), self-seeding monochromators for hard x-ray free-electron laser (XFEL) with high average thermal loading, high heat load diamond crystal monochromators and beam-sharing/beam-split-and-delay devices for XFEL facilities and future upgraded high-brightness coherent x-ray source in the MBA lattice configuration at the APS.

Tensile characteristics of metal nanoparticle films on flexible polymer substrates for printed electronics applications.

PubMed

Kim, Sanghyeok; Won, Sejeong; Sim, Gi-Dong; Park, Inkyu; Lee, Soon-Bok

2013-03-01

Metal nanoparticle solutions are widely used for the fabrication of printed electronic devices. The mechanical properties of the solution-processed metal nanoparticle thin films are very important for the robust and reliable operation of printed electronic devices. In this paper, we report the tensile characteristics of silver nanoparticle (Ag NP) thin films on flexible polymer substrates by observing the microstructures and measuring the electrical resistance under tensile strain. The effects of the annealing temperatures and periods of Ag NP thin films on their failure strains are explained with a microstructural investigation. The maximum failure strain for Ag NP thin film was 6.6% after initial sintering at 150 °C for 30 min. Thermal annealing at higher temperatures for longer periods resulted in a reduction of the maximum failure strain, presumably due to higher porosity and larger pore size. We also found that solution-processed Ag NP thin films have lower failure strains than those of electron beam evaporated Ag thin films due to their highly porous film morphologies.

Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles

NASA Astrophysics Data System (ADS)

Nicolaescu, Dan; Sakai, Shigeki; Gotoh, Yasuhito; Ishikawa, Junzo

2011-07-01

Advanced implantation systems used for semiconductor processing require transportation of quasi-parallel ion beams, which have low energy (11B+, 31P+,75As+, Eion=200-1000 eV). Divergence of the ion beam due to space charge effects can be compensated through injection of electrons into different regions of the ion beam. The present study shows that electron confinement takes place in regions of strong magnetic field such as collimator magnet provided with surface mirror magnetic fields and that divergence of the ion beam passing through such regions is largely reduced. Modeling results have been obtained using Opera3D/Tosca/Scala. Electrons may be provided by collision between ions and residual gas molecules or may be injected by field emitter arrays. The size of surface magnets is chosen such as not to disturb ion beam collimation, making the approach compatible with ion beam systems. Surface magnets may form thin magnetic layers with thickness h=0.5 mm or less. Conditions for spacing of surface magnet arrays for optimal electron confinement are outlined.

Thermal limits on MV x-ray production by bremsstrahlung targets in the context of novel linear accelerators.

PubMed

Wang, Jinghui; Trovati, Stefania; Borchard, Philipp M; Loo, Billy W; Maxim, Peter G; Fahrig, Rebecca

2017-12-01

To study the impact of target geometrical and linac operational parameters, such as target material and thickness, electron beam size, repetition rate, and mean current on the ability of the radiotherapy treatment head to deliver high-dose-rate x-ray irradiation in the context of novel linear accelerators capable of higher repetition rates/duty cycle than conventional clinical linacs. The depth dose in a water phantom without a flattening filter and heat deposition in an x-ray target by 10 MeV pulsed electron beams were calculated using the Monte-Carlo code MCNPX, and the transient temperature behavior of the target was simulated by ANSYS. Several parameters that affect both the dose distribution and temperature behavior were investigated. The target was tungsten with a thickness ranging from 0 to 3 mm and a copper heat remover layer. An electron beam with full width at half maximum (FWHM) between 0 and3 mm and mean current of 0.05-2 mA was used as the primary beam at repetition rates of 100, 200, 400, and 800 Hz. For a 10 MeV electron beam with FWHM of 1 mm, pulse length of 5 μs, by using a thin tungsten target with thickness of 0.2 mm instead of 1 mm, and by employing a high repetition rate of 800 Hz instead of 100 Hz, the maximum dose rate delivered can increase two times from 0.57 to 1.16 Gy/s. In this simple model, the limiting factor on dose rate is the copper heat remover's softening temperature, which was considered to be 500°C in our study. A high dose rate can be obtained by employing thin targets together with high repetition rate electron beams enabled by novel linac designs, whereas the benefit of thin targets is marginal at conventional repetition rates. Next generation linacs used to increase dose rate need different target designs compared to conventional linacs. © 2017 American Association of Physicists in Medicine.

Physical characterization of single convergent beam device for teletherapy: theoretical and Monte Carlo approach.

PubMed

Figueroa, R G; Valente, M

2015-09-21

The main purpose of this work is to determine the feasibility and physical characteristics of a new teletherapy device of radiation therapy based on the application of a convergent x-ray beam of energies like those used in radiotherapy providing highly concentrated dose delivery to the target. We have denominated it Convergent Beam Radio Therapy (CBRT). Analytical methods are developed first in order to determine the dosimetry characteristic of an ideal convergent photon beam in a hypothetical water phantom. Then, using the PENELOPE Monte Carlo code, a similar convergent beam that is applied to the water phantom is compared with that of the analytical method. The CBRT device (Converay(®)) is designed to adapt to the head of LINACs. The converging beam photon effect is achieved thanks to the perpendicular impact of LINAC electrons on a large thin spherical cap target where Bremsstrahlung is generated (high-energy x-rays). This way, the electrons impact upon various points of the cap (CBRT condition), aimed at the focal point. With the X radiation (Bremsstrahlung) directed forward, a system of movable collimators emits many beams from the output that make a virtually definitive convergent beam. Other Monte Carlo simulations are performed using realistic conditions. The simulations are performed for a thin target in the shape of a large, thin, spherical cap, with an r radius of around 10-30 cm and a curvature radius of approximately 70 to 100 cm, and a cubed water phantom centered in the focal point of the cap. All the interaction mechanisms of the Bremsstrahlung radiation with the phantom are taken into consideration for different energies and cap thicknesses. Also, the magnitudes of the electric and/or magnetic fields, which are necessary to divert clinical-use electron beams (0.1 to 20 MeV), are determined using electromagnetism equations with relativistic corrections. This way the above-mentioned beam is manipulated and guided for its perpendicular impact upon the spherical cap. The first results that were achieved show in-depth dose peaks, having shapes qualitatively similar to those from hadrontherapy techniques. The obtained results demonstrate that in-depth dose peaks are generated at the focus point or isocenter. These results are consistent with those obtained with Monte Carlo codes. The peak-focus is independent of the energy of the photon beam, though its intensity is not. The realistic results achieved with the Monte Carlo code show that the Bremsstrahlung generated on the thin cap is mainly directed towards the focus point. The aperture angle at each impact point depends primarily on the energy beam, the atomic number Z and the thickness of the target. There is also a poly-collimator coaxial to the cap or ring with many holes, permitting a clean convergent-exit x-ray beam with a dose distribution that is similar to the ideal case. The electric and magnetic fields needed to control the deflection of the electron beams in the CBRT geometry are highly feasible using specially designed electric and/or magnetic devices that, respectively, have voltage and current values that are technically achievable. However, it was found that magnetic devices represent a more suitable option for electron beam control, especially at high energies. The main conclusion is that the development of such a device is feasible. Due to its features, this technology might be considered a powerful new tool for external radiotherapy with photons.

Novel high-energy physics studies using intense lasers and plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leemans, Wim P.; Bulanov, Stepan; Esarey, Eric

2015-06-29

In the framework of the project “Novel high-energy physics studies using intense lasers and plasmas” we conducted the study of ion acceleration and “flying mirrors” with high intensity lasers in order to develop sources of ion beams and high frequency radiation for different applications. Since some schemes of laser ion acceleration are also considered a good source of “flying mirrors”, we proposed to investigate the mechanisms of “mirror” formation. As a result we were able to study the laser ion acceleration from thin foils and near critical density targets. We identified several fundamental factors limiting the acceleration in the RPAmore » regime and proposed the target design to compensate these limitations. In the case of near critical density targets, we developed a concept for the laser driven ion source for the hadron therapy. Also we studied the mechanism of “flying mirror” generation during the intense laser interaction with thin solid density targets. As for the laser-based positron creation and capture we initially proposed to study different regimes of positron beam generation and positron beam cooling. Since the for some of these schemes a good quality electron beam is required, we studied the generation of ultra-low emittance electron beams. In order to understand the fundamental physics of high energy electron beam interaction with high intensity laser pulses, which may affect the efficient generation of positron beams, we studied the radiation reaction effects.« less

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Millimeter-wave generation with spiraling electron beams

NASA Technical Reports Server (NTRS)

Kulke, B.

1971-01-01

The feasibility of using the interaction between a thin, solid, spiraling electron beam of 10 to 20 kV energy and a microwave cavity to generate watts of CW millimeter-wave power was investigated. Experimental results are given for several prototype devices operating at 9.4 GHz and at 94 GHz. Power outputs of 5 W, and electronic efficiencies near 3%, were obtained at X band, and moderate gain was obtained at 94 GHz. The small-signal theory gives a good fit to the X-band data, and the device behavior at 94 GHz is as expected from the given beam characteristics. The performance is limited chiefly by the velocity spread in the spiraling electron beam, and once this can be brought under control, high-power generation of millimeter waves appears quite feasible with this type of device.

Angular distributions of reflected and refracted relativistic electron beams crossing a thin planar target at a small angle to its surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serov, A. V., E-mail: serov@x4u.lebedev.ru; Mamonov, I. A.; Kol’tsov, A. V., E-mail: koltsov@x4u.lebedev.ru

2015-10-15

The scattering of electrons by aluminum, copper, and lead foils, as well as by bimetallic aluminum-lead and aluminum-copper foils, has been studied experimentally. A microtron with an energy of particles of 7.4 MeV has been used as a source of electrons. The beam of particles incident on a target at small angles is split into particles reflected from the foil, which constitute a reflected beam, and particles crossing the foil, which constitute a refracted beam. The effect of the material and thickness of the foil, as well as the angle between the initial trajectory of the beam and the planemore » of the target, on the direction of motion and the angular divergence of the beam crossing the foil and the beam reflected from the foil has been analyzed. Furthermore, the effect of the sequence of metal layers in bimetallic films on the angles of refraction and reflection of the beam has been examined.« less

Near atomically smooth alkali antimonide photocathode thin films

DOE PAGES

Feng, Jun; Karkare, Siddharth; Nasiatka, James; ...

2017-01-24

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Near atomically smooth alkali antimonide photocathode thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jun; Karkare, Siddharth; Nasiatka, James

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Simulating Lattice Image of Suspended Graphene Taken by Helium Ion Microscopy

NASA Astrophysics Data System (ADS)

Miyamoto, Yoshiyuki; Zhang, Hong; Rubio, Angel

2013-03-01

Atomic scale image in nano-scale helps us to characterize property of graphene, and performance of high-resolution transmission electron microscopy (HRTEM) is significant, so far. While a tool without pre-treatment of samples is demanded in practice. Helium ion microscopy (HIM), firstly reported by Word et. al. in 2006, was applied for monitoring graphene in device structure (Lumme, et. al., 2009). Motivated by recent HIM explorations, we examined the possibility of taking lattice image of suspended graphene by HIM. The intensity of secondary emitted electron is recorded as a profile of scanned He+-beam in HIM measurement. We mimicked this situation by performing electron-ion dynamics based on the first-principles simulation within the time-dependent density functional theory. He+ ion collision on single graphene sheet at several impact points were simulated and we found that the amount of secondary emitted electron from graphene reflected the valence charge distribution of the graphene sheet. Therefore HIM using atomically thin He-beam should be able to provide the lattice image, and we propose that an experiment generating ultra-thin He+ ion beam (Rezeq et. al., 2006) should be combined with HIM technique. All calculations were performed by using the Earth Simulator.

Observation of Electron-Beam-Induced Phase Evolution Mimicking the Effect of the Charge–Discharge Cycle in Li-Rich Layered Cathode Materials Used for Li Ion Batteries

DOE PAGES

Lu, Ping; Yan, Pengfei; Romero, Eric; ...

2015-01-27

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Electron transport in solid targets and in the active mixture of a CO2 laser amplifier

NASA Astrophysics Data System (ADS)

Galkowski, A.

The paper examines the use of the NIKE code for the Monte Carlo computation of the deposited energy profile and other characteristics of the absorption process of an electron beam in a solid target and the spatial distribution of primary ionization in the active mixture of a CO2 laser amplifier. The problem is considered in connection with the generation of intense electron beams and the acceleration of thin metal foils, as well as in connection with the electric discharge pumping of a CO2 laser amplifier.

Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

PubMed

Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

2016-08-19

We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope.

PubMed

Bäcke, Olof; Lindqvist, Camilla; de Zerio Mendaza, Amaia Diaz; Gustafsson, Stefan; Wang, Ergang; Andersson, Mats R; Müller, Christian; Kristiansen, Per Magnus; Olsson, Eva

2017-05-01

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV-vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000kGy. Copyright © 2016 Elsevier B.V. All rights reserved.

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope.

PubMed

Bäcke, Olof; Lindqvist, Camilla; de Zerio Mendaza, Amaia Diaz; Gustafsson, Stefan; Wang, Ergang; Andersson, Mats R; Müller, Christian; Kristiansen, Per Magnus; Olsson, Eva

2017-02-01

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV-vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000kGy. Copyright © 2017 Elsevier B.V. All rights reserved.

Accurate electron gun-positioning mechanism for electron beam-mapping of large cross-section magnetic surfaces

NASA Astrophysics Data System (ADS)

Anderson, F. S. B.; Middleton, F.; Colchin, R. J.; Million, D.

1989-04-01

A method of accurately supporting and positioning an electron source inside a large cross-sectional area magnetic field which provides very low electron beam occlusion is reported. The application of electrical discharge machining to the fabrication of a 1-m truss support structure has provided an extremely long, rigid and mechanically strong electron gun support. Reproducible electron gun positioning to within 1 mm has been achieved at any location within a 1×0.6-m2 area. The extremely thin sections of the support truss (≤1.5 mm) have kept the electron beam occlusion to less than 3 mm. The support and drive mechanism have been designed and fabricated at the University of Wisconsin for application to the mapping of the magnetic surface structure of the Advanced Toroidal Facility torsatron1 at the Oak Ridge National Laboratory.

Local electric field direct writing – Electron-beam lithography and mechanism

DOE PAGES

Jiang, Nan; Su, Dong; Spence, John C. H.

2017-08-24

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Local electric field direct writing – Electron-beam lithography and mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Nan; Su, Dong; Spence, John C. H.

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Energy-Sensitive Ion- and Cathode-Luminescent Radiation-Beam Monitors Based on Multilayer Thin-Film Designs.

PubMed

Gil-Rostra, Jorge; Ferrer, Francisco J; Espinós, Juan Pedro; González-Elipe, Agustín R; Yubero, Francisco

2017-05-17

A multilayer luminescent design concept is presented to develop energy-sensitive radiation-beam monitors on the basis of colorimetric analysis. Each luminescent layer within the stack consists of rare-earth-doped transparent oxides of optical quality and a characteristic luminescent emission under excitation with electron or ion beams. For a given type of particle beam (electron, protons, α particles, etc.), its penetration depth and therefore its energy loss at a particular buried layer within the multilayer stack depend on the energy of the initial beam. The intensity of the luminescent response of each layer is proportional to the energy deposited by the radiation beam within the layer, so characteristic color emission will be achieved if different phosphors are considered in the layers of the luminescent stack. Phosphor doping, emission efficiency, layer thickness, and multilayer structure design are key parameters relevant to achieving a broad colorimetric response. Two case examples are designed and fabricated to illustrate the capabilities of these new types of detector to evaluate the kinetic energy of either electron beams of a few kilo-electron volts or α particles of a few mega-electron volts.

Resonator Optical Designs For Free Electron Lasers

NASA Astrophysics Data System (ADS)

Viswanathan, V. K.; Saxman, A.; Woodfin, G.

1985-11-01

The output beam from free-electron lasers tends to be a thin, pencil-like beam because of the nature of the gain volume. For moderate power devices, mirror damage considerations imply that the beam has to travel many meters before it can expand enough to allow retro-reflection from state-of-the-art mirrors. However, use of grazing incidence optics can resolve the problem of damage to the optical elements and result in a cavity of reasonable dimensions. The optical design considerations for such resonators are addressed in this paper. A few of the practical resonator designs approaching diffraction limited performance are presented.

Resonator optical designs for free electron lasers

NASA Astrophysics Data System (ADS)

Viswanathan, V. K.; Saxman, A.; Woodfin, G.

1985-03-01

The output beam from free-electron lasers tends to be a thin, pencil-like beam because of the nature of the gain volume. For moderate power devices, mirror damage considerations imply that the beam has to travel many meters before it can expand enough to allow retro-reflection from state-of-the-art mirrors. However, use of grazing incidence optics can resolve the problem of damage to the optical elements and result in a cavity of reasonable dimensions. The optical design considerations for such resonators are discussed. A few of the practical resonator designs approaching diffraction limited performance are presented.

Generation of X-rays by electrons recycling through thin internal targets of cyclic accelerators

NASA Astrophysics Data System (ADS)

Kaplin, V.; Kuznetsov, S.; Uglov, S.

2018-05-01

The use of thin (< 10‑3 radiation length) internal targets in cyclic accelerators leads to multiple passes (recycling effect) of electrons through them. The multiplicity of electron passes (M) is determined by the electron energy, accelerator parameters, the thickness, structure and material of a target and leads to an increase in the effective target thickness and the efficiency of radiation generation. The increase of M leads to the increase in the emittance of electron beams which can change the characteristics of radiation processes. The experimental results obtained using the Tomsk synchrotron and betatron showed the possibility of increasing the yield and brightness of coherent X-rays generated by the electrons passing (recycling) through thin crystals and periodic multilayers placed into the chambers of accelerators, when the recycling effect did not influence on the spectral and angular characteristics of generated X-rays.

Superconductive radiofrequency window assembly

DOEpatents

Phillips, Harry Lawrence; Elliott, Thomas S.

1998-01-01

The present invention is a superconducting radiofrequency window assembly for use in an electron beam accelerator. The srf window assembly (20) has a superconducting metal-ceramic design. The srf window assembly (20) comprises a superconducting frame (30), a ceramic plate (40) having a superconducting metallized area, and a superconducting eyelet (50) for sealing plate (40) into frame (30). The plate (40) is brazed to eyelet (50) which is then electron beam welded to frame (30). A method for providing a ceramic object mounted in a metal member to withstand cryogenic temperatures is also provided. The method involves a new metallization process for coating a selected area of a ceramic object with a thin film of a superconducting material. Finally, a method for assembling an electron beam accelerator cavity utilizing the srf window assembly is provided. The procedure is carried out within an ultra clean room to minimize exposure to particulates which adversely affect the performance of the cavity within the electron beam accelerator.

Superconductive radiofrequency window assembly

DOEpatents

Phillips, H.L.; Elliott, T.S.

1998-05-19

The present invention is a superconducting radiofrequency window assembly for use in an electron beam accelerator. The SRF window assembly has a superconducting metal-ceramic design. The SRF window assembly comprises a superconducting frame, a ceramic plate having a superconducting metallized area, and a superconducting eyelet for sealing plate into frame. The plate is brazed to eyelet which is then electron beam welded to frame. A method for providing a ceramic object mounted in a metal member to withstand cryogenic temperatures is also provided. The method involves a new metallization process for coating a selected area of a ceramic object with a thin film of a superconducting material. Finally, a method for assembling an electron beam accelerator cavity utilizing the SRF window assembly is provided. The procedure is carried out within an ultra clean room to minimize exposure to particulates which adversely affect the performance of the cavity within the electron beam accelerator. 11 figs.

Superconducting radiofrequency window assembly

DOEpatents

Phillips, Harry L.; Elliott, Thomas S.

1997-01-01

The present invention is a superconducting radiofrequency window assembly for use in an electron beam accelerator. The srf window assembly (20) has a superconducting metal-ceramic design. The srf window assembly (20) comprises a superconducting frame (30), a ceramic plate (40) having a superconducting metallized area, and a superconducting eyelet (50) for sealing plate (40) into frame (30). The plate (40) is brazed to eyelet (50) which is then electron beam welded to frame (30). A method for providing a ceramic object mounted in a metal member to withstand cryogenic temperatures is also provided. The method involves a new metallization process for coating a selected area of a ceramic object with a thin film of a superconducting material. Finally, a method for assembling an electron beam accelerator cavity utilizing the srf window assembly is provided. The procedure is carried out within an ultra clean room to minimize exposure to particulates which adversely affect the performance of the cavity within the electron beam accelerator.

Superconducting radiofrequency window assembly

DOEpatents

Phillips, H.L.; Elliott, T.S.

1997-03-11

The present invention is a superconducting radiofrequency window assembly for use in an electron beam accelerator. The srf window assembly has a superconducting metal-ceramic design. The srf window assembly comprises a superconducting frame, a ceramic plate having a superconducting metallized area, and a superconducting eyelet for sealing plate into frame. The plate is brazed to eyelet which is then electron beam welded to frame. A method for providing a ceramic object mounted in a metal member to withstand cryogenic temperatures is also provided. The method involves a new metallization process for coating a selected area of a ceramic object with a thin film of a superconducting material. Finally, a method for assembling an electron beam accelerator cavity utilizing the srf window assembly is provided. The procedure is carried out within an ultra clean room to minimize exposure to particulates which adversely affect the performance of the cavity within the electron beam accelerator. 11 figs.

A compact electron gun for time-resolved electron diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, Matthew S.; Lane, Paul D.; Wann, Derek A., E-mail: derek.wann@york.ac.uk

A novel compact time-resolved electron diffractometer has been built with the primary goal of studying the ultrafast molecular dynamics of photoexcited gas-phase molecules. Here, we discuss the design of the electron gun, which is triggered by a Ti:Sapphire laser, before detailing a series of calibration experiments relating to the electron-beam properties. As a further test of the apparatus, initial diffraction patterns have been collected for thin, polycrystalline platinum samples, which have been shown to match theoretical patterns. The data collected demonstrate the focusing effects of the magnetic lens on the electron beam, and how this relates to the spatial resolutionmore » of the diffraction pattern.« less

New Insights into Shape Memory Alloy Bimorph Actuators Formed by Electron Beam Evaporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hao; Nykypanchuk, Dmytro

In order to create shape memory alloy (SMA) bimorph microactuators with high-precision features, a novel fabrication process combined with electron beam (E-beam) evaporation, lift-off resist and isotropic XeF2 dry etching method was developed. To examine the effect of E-beam deposition and annealing process on nitinol (NiTi) characteristics, the NiTi thin film samples with different deposition rate and overflow conditions during annealing process were investigated. With the characterizations using scanning electron microscope and x-ray diffraction, the results indicated that low E-beam deposition rate and argon employed annealing process could benefit the formation of NiTi crystalline structure. In addition, SMA bimorph microactuatorsmore » with high-precision features as small as 5 microns were successfully fabricated. Furthermore, the thermomechanical performance was experimentally verified and compared with finite element analysis simulation results.« less

Two-dimensiosnal electron beam charging model for polymer films. M.S. Thesis; [spacecraft charging, geosynchronous satellites

NASA Technical Reports Server (NTRS)

Reeves, R. D.; Balmain, K. G.

1981-01-01

A two dimensional model was developed to describe the charging of thin polymer films exposed to a uniform mon-energetic electron beam. The study was motivated by observed anomalous behavior of geosynchronous satellites which was attributed to electrical discharges associated with the differential charging of satellite surfaces of magnetospheric electrons. Electric fields both internal and external to the irradiated specimen were calculated at steady state in order to identify regions of high electrical stress. Particular emphasis was placed on evaluating the charging characteristics near the material's edge. The model was used to identify and quantify the effects of some of the experimental parameters notably: beam energy; beam angle of incidence; beam current density; material thickness; and material width. Simulations of the following situations were also conducted: positive or negative precharging over part of the surface; a central gap in the material; and a discontinuity in the material's thickness.

Structural and growth aspects of electron beam physical vapor deposited NiO-CeO{sub 2} nanocomposite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuanr, Sushil Kumar; K, Suresh Babu, E-mail: sureshbabu.nst@pondiuni.edu.in

2016-03-15

Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO{sub 2} (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO{sub 2} nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spitemore » of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO{sub 2} and NiO. Deposition using pure CeO{sub 2} or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO{sub 2} composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films.« less

Analyzing indirect secondary electron contrast of unstained bacteriophage T4 based on SEM images and Monte Carlo simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogura, Toshihiko, E-mail: t-ogura@aist.go.jp

2009-03-06

The indirect secondary electron contrast (ISEC) condition of the scanning electron microscopy (SEM) produces high contrast detection with minimal damage of unstained biological samples mounted under a thin carbon film. The high contrast image is created by a secondary electron signal produced under the carbon film by a low acceleration voltage. Here, we show that ISEC condition is clearly able to detect unstained bacteriophage T4 under a thin carbon film (10-15 nm) by using high-resolution field emission (FE) SEM. The results show that FE-SEM provides higher resolution than thermionic emission SEM. Furthermore, we investigated the scattered electron area within themore » carbon film under ISEC conditions using Monte Carlo simulation. The simulations indicated that the image resolution difference is related to the scattering width in the carbon film and the electron beam spot size. Using ISEC conditions on unstained virus samples would produce low electronic damage, because the electron beam does not directly irradiate the sample. In addition to the routine analysis, this method can be utilized for structural analysis of various biological samples like viruses, bacteria, and protein complexes.« less

A Robust High Current Density Electron Gun

NASA Astrophysics Data System (ADS)

Mako, F.; Peter, W.; Shiloh, J.; Len, L. K.

1996-11-01

Proof-of-principle experiments are proposed to validate a new concept for a robust, high-current density Pierce electron gun (RPG) for use in klystrons and high brightness electron sources for accelerators. This rugged, long-life electron gun avoids the difficulties associated with plasma cathodes, thermionic emitters, and field emission cathodes. The RPG concept employs the emission of secondary electrons in a transmission mode as opposed to the conventional mode of reflection, i.e., electrons exit from the back face of a thin negative electron affinity (NEA) material, and in the same direction as the incident beam. Current amplification through one stage of a NEA material could be over 50 times. The amplification is accomplished in one or more stages consisting of one primary emitter and one or more secondary emitters. The primary emitter is a low current density robust emitter (e.g., thoriated tungsten). The secondary emitters are thin NEA electrodes which emit secondary electrons in the same direction as the incident beam. Specific application is targeted for a klystron gun to be used by SLAC with a cold cathode at 30-40 amps/cm^2 output from the secondary emission stage, a ~2 μs pulse length, and ~200 pulses/second.

Liquid-film electron stripper

DOEpatents

Leemann, Beat T.; Yourd, Roland B.

1984-01-01

A thin freestanding oil film is produced in vacuum by directing an oil stream radially inward to the hollow-ground sharp outer edge of a rotating disc. The sides of the edge are roughened somewhat to aid in dispersing oil from the disc. Oil is removed from the surface of disc to prevent formation of oil droplets which might spin off the disc and disrupt the oil film. An ion beam is directed through the thin oil film so that electrons are stripped from the ions to increase their charge.

Liquid-film electron stripper

DOEpatents

Leemann, B.T.; Yourd, R.B.

1982-03-09

A thin freestanding oil film is produced in vacuum by directing an oil stream radially inward to the hollow-ground sharp outer edge of a rotating disc. The sides of the edge are roughened somewhat to aid in dispersing oil from the disc. Oil is removed from the surface of disc to prevent formation of oil droplets which might spin off the disc and disrupt the oil film. An ion beam is directed through the thin oil film so that electrons are stripped from the ions to increase their charge.

Preparation of high-quality planar FeRh thin films for in situ TEM investigations

NASA Astrophysics Data System (ADS)

Almeida, Trevor P.; McGrouther, Damien; Pivak, Yevheniy; Perez Garza, Hector Hugo; Temple, Rowan; Massey, Jamie; Marrows, Christopher H.; McVitie, Stephen

2017-10-01

The preparation of a planar FeRh thin film using a focused ion beam (FIB) secondary electron microscope (SEM) for the purpose of in situ transmission electron microscopy (TEM) is presented. A custom SEM stub with 45° faces allows for the transfer and milling of the sample on a TEM heating chip, whilst Fresnel imaging within the TEM revealed the presence of the magnetic domain walls, confirming the quality of the FIB-prepared sample.

Determination and analysis of non-linear index profiles in electron-beam-deposited MgOAl2O3ZrO2 ternary composite thin-film optical coatings

NASA Astrophysics Data System (ADS)

Sahoo, N. K.; Thakur, S.; Senthilkumar, M.; Das, N. C.

2005-02-01

Thickness-dependent index non-linearity in thin films has been a thought provoking as well as intriguing topic in the field of optical coatings. The characterization and analysis of such inhomogeneous index profiles pose several degrees of challenges to thin-film researchers depending upon the availability of relevant experimental and process-monitoring-related information. In the present work, a variety of novel experimental non-linear index profiles have been observed in thin films of MgOAl2O3ZrO2 ternary composites in solid solution under various electron-beam deposition parameters. Analysis and derivation of these non-linear spectral index profiles have been carried out by an inverse-synthesis approach using a real-time optical monitoring signal and post-deposition transmittance and reflection spectra. Most of the non-linear index functions are observed to fit polynomial equations of order seven or eight very well. In this paper, the application of such a non-linear index function has also been demonstrated in designing electric-field-optimized high-damage-threshold multilayer coatings such as normal- and oblique-incidence edge filters and a broadband beam splitter for p-polarized light. Such designs can also advantageously maintain the microstructural stability of the multilayer structure due to the low stress factor of the non-linear ternary composite layers.

Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

2001-08-01

The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. {copyright} 2001 Optical Society of America

High-energy electron beams for ceramic joining

NASA Astrophysics Data System (ADS)

Turman, Bob N.; Glass, S. J.; Halbleib, J. A.; Helmich, D. R.; Loehman, Ron E.; Clifford, Jerome R.

1995-03-01

Joining of structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for high temperature joining. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the ceramic. We have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 MPa have been measured. This strength is comparable to that reported in the literature for bonding silicon nitride (Si3N4) to molybdenum with copper-silver-titanium braze, but weaker than that reported for Si3N4 - Si3N4 with gold-nickel braze. The bonding mechanism appears to be formation of a thin silicide layer. Beam damage to the Si3N4 was also assessed.

Test results for electron beam charging of flexible insulators and composites. [solar array substrates, honeycomb panels, and thin dielectric films

NASA Technical Reports Server (NTRS)

Staskus, J. V.; Berkopec, F. D.

1979-01-01

Flexible solar-array substrates, graphite-fiber/epoxy - aluminum honeycomb panels, and thin dielectric films were exposed to monoenergetic electron beams ranging in energy from 2 to 20 keV in the Lewis Research Center's geomagnetic-substorm-environment simulation facility to determine surface potentials, dc currents, and surface discharges. The four solar-array substrate samples consisted of Kapton sheet reinforced with fabrics of woven glass or carbon fibers. They represented different construction techniques that might be used to reduce the charge accumulation on the array back surface. Five honeycomb-panel samples were tested, two of which were representative of Voyager antenna materials and had either conductive or nonconductive painted surfaces. A third sample was of Navstar solar-array substrate material. The other two samples were of materials proposed for use on Intelsat V. All the honeycomb-panel samples had graphite-fiber/epoxy composite face sheets. The thin dielectric films were 2.54-micrometer-thick Mylar and 7.62-micrometer-thick Kapton.

Low-Cost Deposition Methods for Transparent Thin-Film Transistors

DTIC Science & Technology

2003-09-26

theoretical limit is estimated to be ∼10 cm2/V s. [9] The largest organic TFT mobility reported is 2.7 cm2/V s for pentacene which is approaching the...refractory materials require the use of an electron beam. A directed electron beam is capable of locally heating source material to extremely high...Haboeck, M. Stassburg, M. Strassburg, G. Kaczmarczyk, A. Hoffman, and C. Thomsen, “Nitrogen-related local vibrational modes in ZnO:N,” Appl. Phys

Thermal Loading of Thin Metal Foils Used as Electron Beam Windows for a KRF Laser

DTIC Science & Technology

2005-06-01

the Inertial Fusion Energy (IFE) requirements for durability, efficiency, and cost. One of the challenging laser components is the pressure foil that...R. Welch, D. V. Rose, and S. Searles, "Electron beam pumped krypton fluoride lasers for fusion energy ," Proc. IEEE, vol. 92, pp. 1043-1056, July...D. Weidenheimer, and D. V. Rose, "Repetitively pulsed, high energy KrF lasers for inertial fusion energy ," Nucl. Fusion, vol. 44, pp. S247-S253

Measurements and Studies of Secondary Electron Emission of Diamond Amplified Photocathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu,Q.

2008-10-01

The Diamond Amplified Photocathode (DAP) is a novel approach to generating electrons. By following the primary electron beam, which is generated by traditional electron sources, with an amplifier, the electron beam available to the eventual application is increased by 1 to 2 orders of magnitude in current. Diamond has a very wide band gap of 5.47eV which allows for a good negative electron affinity with simple hydrogenation, diamond can hold more than 2000MV/m field before breakdown. Diamond also provides the best rigidity among all materials. These two characters offer the capability of applying high voltage across very thin diamond filmmore » to achieve high SEY and desired emission phase. The diamond amplifier also is capable of handling a large heat load by conduction and sub-nanosecond pulse input. The preparation of the diamond amplifier includes thinning and polishing, cleaning with acid etching, metallization, and hydrogenation. The best mechanical polishing available can provide high purity single crystal diamond films with no less than 100 {micro}m thickness and <15 nm Ra surface roughness. The ideal thickness for 700MHz beam is {approx}30 {micro}m, which requires further thinning with RIE or laser ablation. RIE can achieve atomic layer removal precision and roughness eventually, but the time consumption for this procedure is very significant. Laser ablation proved that with <266nm ps laser beam, the ablation process on the diamond can easily achieve removing a few microns per hour from the surface and <100nm roughness. For amplifier application, laser ablation is an adequate and efficient process to make ultra thin diamond wafers following mechanical polishing. Hydrogenation will terminate the diamond surface with monolayer of hydrogen, and form NEA so that secondary electrons in the conduction band can escape into the vacuum. The method is using hydrogen cracker to strike hydrogen atoms onto the bare diamond surface to form H-C bonds. Two independent experiments were carried out to determine the transport of the electrons within the diamond and their emission at the surface. In transmission mode measurements, the diamond amplifier was coated with metal on both sides, so results simply depend only on the electron transport within the diamond. The SEY for this mode provides one secondary electron per 20eV energy, which gives the gain of more than 200 for 4.7keV (effective energy) primary electrons under 2MV/m. Laser detrapping can help the signal maintain the gain with lops pulse and duty cycle of 1.67 x 10{sup -7}. In emission mode measurements, in which the diamond is prepared as in the actual application, the SEY is {approx}20 for 700eV (effective energy) primary electrons under 1.21MV/m. The electric field applied and the primary electron energy is limited by the experiment setup, but the results show good trend toward large gain under high field. Thermal emittance of the diamond secondary emission is critical for the beam application. A careful design is setup to measure with very fine precision and accuracy of 0.01eV.« less

Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography.

PubMed

Chu, Cheng Hung; Shiue, Chiun Da; Cheng, Hsuen Wei; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

2010-08-16

Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a ZnS-SiO(2) dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge(2)Sb(2)Te(5) thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.

2014-01-07

The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minimamore » with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.« less

Atmospheric Electron-Induced X-Ray Spectrometer (AEXS) Development

NASA Technical Reports Server (NTRS)

Wilcox, Jaroslava Z.; Urgiles, Eduardo; Toda, Risaku; George, Thomas; Douglas, Susanne; Crisp, Joy

2005-01-01

This paper describes the progress in the development of the so-called Atmospheric Electron X-ray Spectrometer (AEXS) instrument in our laboratory at JPL. The AEXS is a novel miniature instrument concept based on the excitation of characteristic X-Ray Fluorescence (XRF) and luminescence spectra using a focused electron beam, for non-destructive evaluation of surfaces of samples in situ, in planetary ambient atmosphere. In situ operation is obtained through the use of a thin electron transmissive membrane to isolate the vacuum within the AEXS electron source from the outside ambient atmosphere. By using a focused electron beam, the impinging electrons on samples in the external atmosphere excite XRF spectra from the irradiated spots with high-to-medium spatial resolution. The XRF spectra are analyzed using an energy-dispersive detector to determine surface elemental composition. The use of high- intensity electron beam results in rapid spectrum acquisition (several minutes), and consequently low energy consumption (several tens of Joules) per acquired XRF spectrum in comparison to similar portable instruments.

Beam Propagation Experimental Study.

DTIC Science & Technology

1983-04-01

pressures, the beam front velocity is limited by the rate at which the gas can be ionized. The first portion of the beam is lost due to radial electric...from the ionized- gas electrons and low-energy secondaries by a thin graphite sheet in the original array developed during the FX-25 exper- iments. The...calorimeter in vacuum, and isolated from the ionized- gas channel by a Titanium foil. The results of these measurements indicated that the energy

Swift heavy ion induced topography changes of Tin oxide thin films

NASA Astrophysics Data System (ADS)

Jaiswal, Manoj K.; Kumar, Avesh; Kanjilal, D.; Mohanty, T.

2012-12-01

Monodisperse tin oxide nanocrystalline thin films are grown on silicon substrates by electron beam evaporation method followed by 100 MeV silver ion bombardment with varying ion fluence from 5 × 1011 ions cm-2 to 1 × 1013 ions cm-2 at constant ion flux. Enhancement of crystallinity of thin films with fluence is observed from glancing angle X-ray diffraction studies. Morphological studies by atomic force microscopy reveal the changes in grain size from 25 nm to 44 nm with variation in ion fluence. The effect of initial surface roughness and adatom mobility on topography is reported. In this work correlation between ion beam induced defect concentration with topography and grain size distribution is emphasized.

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects

NASA Astrophysics Data System (ADS)

Han, I.-H.; Lee, I.-S.; Song, J.-H.; Lee, M.-H.; Park, J.-C.; Lee, G.-H.; Sun, X.-D.; Chung, S.-M.

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO3 concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects.

PubMed

Han, I-H; Lee, I-S; Song, J-H; Lee, M-H; Park, J-C; Lee, G-H; Sun, X-D; Chung, S-M

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO(3) concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Overview of Hall D Complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chudakov, Eugene A.

Hall D is a new experimental hall at Jefferson Lab, designed for experiments with a photon beam. The primary motivation for Hall D is the GlueX experiment [1,2], dedicated to meson spectroscopy. The Hall D complex consists of: An electron beam line used to extract the 5.5-pass electrons from the accelerator into the Tagger Hall. The designed beam energy is E e = 12 GeV;The Tagger Hall, where the electron beam passes through a thin radiator (~0.01% R.L.) and is deflected into the beam dump. The electrons that lost >30% of their energy in the radiator are detected with scintillatormore » hodoscopes providing a ~0.1% energy resolution for the tagged photons. Aligned diamond radiators allow to produce linearly polarized photons via the Coherent Bremsstrahlung. The beam dump is limited to 60 kW (5 µA at 12 GeV); The Collimator Cave contains a collimator for the photon beam and dipole magnets downstream in order to remove charged particles. The 3.4 mm diameter collimator, located about 75 m downstream of the radiator, selects the central cone of the photon beam increasing its average linear polarization, up to ~40%in the coherent peak at 9 GeV; Hall D contains several elements of the photon beam line, and themain spectrometer. A Pair Spectrometer consists of a thin converter, a dipole magnet, and a two-arm detector used to measure the energy spectrum of the photon beam. The main spectrometer is based on a 2-T superconducting solenoid, 4 m long and 1.85 m bore diameter. The liquid hydrogen target is located in the front part the solenoid. The charged tracks are detected with a set of drift chambers; photons are detected with two electromagnetic calorimeters. There are also scintillator hodoscopes for triggering and time-of-flight measurements. The spectrometer is nearly hermetic in an angular range of 1° < θ < 120 •. The momentum resolution is σ p /p ~ 1 ₋ ₋3% depending on the polar angle θ. The energy resolution of the electromagnetic calorimeters is about 7% at 1 GeV.« less

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

FIB-SEM tomography in biology.

PubMed

Kizilyaprak, Caroline; Bittermann, Anne Greet; Daraspe, Jean; Humbel, Bruno M

2014-01-01

Three-dimensional information is much easier to understand than a set of two-dimensional images. Therefore a layman is thrilled by the pseudo-3D image taken in a scanning electron microscope (SEM) while, when seeing a transmission electron micrograph, his imagination is challenged. First approaches to gain insight in the third dimension were to make serial microtome sections of a region of interest (ROI) and then building a model of the object. Serial microtome sectioning is a tedious and skill-demanding work and therefore seldom done. In the last two decades with the increase of computer power, sophisticated display options, and the development of new instruments, an SEM with a built-in microtome as well as a focused ion beam scanning electron microscope (FIB-SEM), serial sectioning, and 3D analysis has become far easier and faster.Due to the relief like topology of the microtome trimmed block face of resin-embedded tissue, the ROI can be searched in the secondary electron mode, and at the selected spot, the ROI is prepared with the ion beam for 3D analysis. For FIB-SEM tomography, a thin slice is removed with the ion beam and the newly exposed face is imaged with the electron beam, usually by recording the backscattered electrons. The process, also called "slice and view," is repeated until the desired volume is imaged.As FIB-SEM allows 3D imaging of biological fine structure at high resolution of only small volumes, it is crucial to perform slice and view at carefully selected spots. Finding the region of interest is therefore a prerequisite for meaningful imaging. Thin layer plastification of biofilms offers direct access to the original sample surface and allows the selection of an ROI for site-specific FIB-SEM tomography just by its pronounced topographic features.

Electron Microprobe Measurements of Nitrogen in SiC

NASA Astrophysics Data System (ADS)

Ross, K.

2007-12-01

Methods have been developed for the measurement of low abundances of nitrogen in SiC films. These techniques were developed for measurements of synthetic thin-film samples prepared by materials scientists but the technique can also be applied to natural SiC grains in meteorites. One problem associated with measuring nitrogen at low abundance levels is the low count rates due to strong absorption of the nitrogen signal in the matrix material. In thin film samples, (SiC deposited on elemental Si) it is preferable to limit x-ray production and emission to the overlayer. This eliminates the need for data reduction using thin-film methods. Thin film data reduction is inevitably less accurate than bulk material data reduction methods. In order to limit x-ray emission to the film layer, data has been collected at 5 kV and 3.5 kV accelerating voltage (depending on film thickness estimates provided by scientists who prepared these samples). These low beam energies also promote production of x-rays in the shallow region of the samples, and this minimizes strong absorption, leading to more abundant nitrogen x-ray detection, which improves counting statistics and overall precision. The CASINO monte carlo modeling program was used to model electron penetration and x-ray production as a function of beam energy and depth in the sample in order to ensure that the excited volume is limited to the film. The beam was set to 200 nA beam current. This high beam current also improves counting statistics by providing more abundant count rates. One drawback of these beam conditions is the limited spatial resolution provided. In our Cameca probe, a 5 kV, 200 nA beam is approximately 10 microns in diameter. SiC samples and standard were not carbon coated (they are conducting). AlN was used as the nitrogen standard. These films contained 0.3 to 0.7 wt. per cent nitrogen, with analytical uncertainties in the range of 10-20 per cent relative errors. The Si:C ratios were very near 1:1 indicating that little if any Si signal originated in the substrate of the film.

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

NASA Astrophysics Data System (ADS)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Pulse-resolved intensity measurements at a hard X-ray FEL using semi-transparent diamond detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, Thomas; Freund, Wolfgang; Boesenberg, Ulrike

Solid-state ionization chambers are presented based on thin diamond crystals that allow pulse-resolved intensity measurements at a hard X-ray free-electron laser (FEL), up to the 4.5 MHz repetition rate that will become available at the European XFEL. Due to the small X-ray absorption of diamond the thin detectors are semi-transparent which eases their use as non-invasive monitoring devices in the beam. FELs are characterized by strong pulse-to-pulse intensity fluctuations due to the self-amplified spontaneous emission (SASE) process and in many experiments it is mandatory to monitor the intensity of each individual pulse. Two diamond detectors with different electrode materials, berylliummore » and graphite, were tested as intensity monitors at the XCS endstation of the Linac Coherent Light Source (LCLS) using the pink SASE beam at 9 keV. The performance is compared with LCLS standard monitors that detect X-rays backscattered from thin SiN foils placed in the beam. In conclusion, the graphite detector can also be used as a beam position monitor although with rather coarse resolution.« less

Pulse-resolved intensity measurements at a hard X-ray FEL using semi-transparent diamond detectors

DOE PAGES

Roth, Thomas; Freund, Wolfgang; Boesenberg, Ulrike; ...

2018-01-01

Solid-state ionization chambers are presented based on thin diamond crystals that allow pulse-resolved intensity measurements at a hard X-ray free-electron laser (FEL), up to the 4.5 MHz repetition rate that will become available at the European XFEL. Due to the small X-ray absorption of diamond the thin detectors are semi-transparent which eases their use as non-invasive monitoring devices in the beam. FELs are characterized by strong pulse-to-pulse intensity fluctuations due to the self-amplified spontaneous emission (SASE) process and in many experiments it is mandatory to monitor the intensity of each individual pulse. Two diamond detectors with different electrode materials, berylliummore » and graphite, were tested as intensity monitors at the XCS endstation of the Linac Coherent Light Source (LCLS) using the pink SASE beam at 9 keV. The performance is compared with LCLS standard monitors that detect X-rays backscattered from thin SiN foils placed in the beam. In conclusion, the graphite detector can also be used as a beam position monitor although with rather coarse resolution.« less

Spin-coated epoxy resin embedding technique enables facile SEM/FIB thickness determination of porous metal oxide ultra-thin films.

PubMed

Peña, B; Owen, G Rh; Dettelbach, K E; Berlinguette, C P

2018-01-25

A facile nonsubjective method was designed to measure porous nonconductive iron oxide film thickness using a combination of a focused ion beam (FIB) and scanning electron microscopy. Iron oxide films are inherently nonconductive and porous, therefore the objective of this investigation was to optimize a methodology that would increase the conductivity of the film to facilitate high resolution imaging with a scanning electron microscopy and to preserve the porous nature of the film that could potentially be damaged by the energy of the FIB. Sputter coating the sample with a thin layer of iridium before creating the cross section with the FIB decreased sample charging and drifting, but differentiating the iron layer from the iridium coating with backscattered electron imaging was not definitive, making accurate assumptions of the delineation between the two metals difficult. Moreover, the porous nature of the film was lost due to beam damage following the FIB process. A thin layer plastication technique was therefore used to embed the porous film in epoxy resin that would provide support for the film during the FIB process. However, the thickness of the resin created using conventional thin layer plastication processing varied across the sample, making the measuring process only possible in areas where the resin layer was at its thinnest. Such variation required navigating the area for ideal milling areas, which increased the subjectivity of the process. We present a method to create uniform thin resin layers, of controlled thickness, that are ideal for quantifying the thickness of porous nonconductive films with FIB/scanning electron microscopy. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

NASA Astrophysics Data System (ADS)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical...vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...The instrumentation enables clean, uniform, and rapid deposition of a wide variety of metallic, semiconducting, and ceramic thin films with

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

2006-08-01

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Proton irradiation of beryllium deposits on different candidate materials to be used as a neutron production target for accelerator-based BNCT

NASA Astrophysics Data System (ADS)

Gagetti, Leonardo; Anzorena, Manuel Suarez; Bertolo, Alma; del Grosso, Mariela; Kreiner, Andrés J.

2017-12-01

Thin Be targets for neutron production through Be(d,n) are produced and characterized. We improved and characterized the substrate surface, specifically the roughness, in order to achieve homogeneous and stable deposits. Once well bonded deposits were obtained, some of them were irradiated with a 150 keV proton beam and with a 1.45 MeV deuteron beam. Both deposits, pristine and irradiated, were characterized by profilometry, X-ray diffraction, scanning electron microscopy and electron probe microanalyzer.

Grazing incidence beam expander

NASA Astrophysics Data System (ADS)

Akkapeddi, P. R.; Glenn, P.; Fuschetto, A.; Appert, Q.; Viswanathan, V. K.

1985-01-01

A Grazing Incidence Beam Expander (GIBE) telescope is being designed and fabricated to be used as an equivalent end mirror in a long laser resonator cavity. The design requirements for this GIBE flow down from a generic Free Electron Laser (FEL) resonator. The nature of the FEL gain volume (a thin, pencil-like, on-axis region) dictates that the output beam be very small. Such a thin beam with the high power levels characteristic of FELs would have to travel perhaps hundreds of meters or more before expanding enough to allow reflection from cooled mirrors. A GIBE, on the other hand, would allow placing these optics closer to the gain region and thus reduces the cavity lengths substantially. Results are presented relating to optical and mechanical design, alignment sensitivity analysis, radius of curvature analysis, laser cavity stability analysis of a linear stable concentric laser cavity with a GIBE. Fabrication details of the GIBE are also given.

Grazing incidence beam expander

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akkapeddi, P.R.; Glenn, P.; Fuschetto, A.

1985-01-01

A Grazing Incidence Beam Expander (GIBE) telescope is being designed and fabricated to be used as an equivalent end mirror in a long laser resonator cavity. The design requirements for this GIBE flow down from a generic Free Electron Laser (FEL) resonator. The nature of the FEL gain volume (a thin, pencil-like, on-axis region) dictates that the output beam be very small. Such a thin beam with the high power levels characteristic of FELs would have to travel perhaps hundreds of meters or more before expanding enough to allow reflection from cooled mirrors. A GIBE, on the other hand, wouldmore » allow placing these optics closer to the gain region and thus reduces the cavity lengths substantially. Results are presented relating to optical and mechanical design, alignment sensitivity analysis, radius of curvature analysis, laser cavity stability analysis of a linear stable concentric laser cavity with a GIBE. Fabrication details of the GIBE are also given.« less

Experimental realization of the Ehrenberg-Siday thought experiment

NASA Astrophysics Data System (ADS)

Pozzi, Giulio; Boothroyd, Chris B.; Tavabi, Amir H.; Yücelen, Emrah; Dunin-Borkowski, Rafal E.; Frabboni, Stefano; Gazzadi, Gian Carlo

2016-02-01

In 1949, at the end of a paper dedicated to the concept of the refractive index in electron optics, Ehrenberg and Siday noted that wave-optical effects will arise from an isolated magnetic field even when the rays themselves travel in magnetic-field-free space. They proposed a two-slit experiment, in which a magnetic flux is enclosed between interfering electron beams. Now, through access to modern nanotechnology tools, we used a focused ion beam to open two nanosized slits in a gold-coated silicon nitride membrane and focused electron beam induced deposition to fabricate a thin magnetic bar between the two slits. We then performed Fraunhofer experiments in a transmission electron microscope equipped with a field emission gun and a Lorentz lens. By tilting the specimen in the objective lens field of the electron microscope, the magnetization of the bar could be reversed and the corresponding change in the phase of the electron wave observed directly in the form of a shift in the interference fringe pattern.

Plasmonic properties of gold nanoparticles covered by silicon suboxide thin film

NASA Astrophysics Data System (ADS)

Baranov, Evgeniy; Zamchiy, Alexandr; Safonov, Aleksey; Starinskiy, Sergey; Khmel, Sergey

2017-10-01

The optical properties of nanocomposite material consisting of gold nanoparticles without/with silicon suboxide thin film were obtained. The gold film was deposited by thermal vacuum evaporation and then it was annealed in a vacuum chamber to form gold nanoparticles. The silicon suboxide thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method. The intensity of the localized surface plasmon resonance increased and the plasmon maximum peak shifted from 520 nm to 537 nm.

Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

NASA Astrophysics Data System (ADS)

Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M. A.; Akhter, J. I.

2011-06-01

Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

Thermal annealing and SHI irradiation induced modifications in sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.

2017-09-01

In the present work, we study the annealing and swift heavy ion (SHI) beam induced modifications in the optical and structural properties of sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite (NCs) thin films. The NCs thin films were synthesized by electron-beam evaporation technique at room temperature with ∼30 nm thickness for both carbon layer and ∼6 nm for gold layer. Gold-carbon NCs thin films were annealed in the presence of argon at a temperature of 500 °C, 600 °C and 750 °C. The NCs thin films were also irradiated with 90 MeV Ni ions beam with different ion fluences in the range from 3 × 1012, 6 × 1012 and 1 × 1013 ions/cm2. Surface plasmon resonance (SPR) of Au nanoparticles are not observed in the pristine film but, after annealing at temperature of 600 °C and 750 °C, it was clearly seen at ∼534 nm as confirmed by UV-visible absorption spectroscopy. 90 MeV Ni irradiated thin film at the fluence of 1 × 1013 ions/cm2 also show strong absorption band at ∼534 nm. The growth and size of Au nanoparticle for pristine and 90 MeV Ni ion irradiated thin film with fluence of 1 × 1013 ions/cm2, were estimated by Transmission electron microscopy (TEM) images with the bi-model distribution. The size of the gold nanoparticle (NPs) was found to be ∼4.5 nm for the pristine film and ∼5.4 nm for the irradiated film at a fluence of 1 × 1013 ions/cm2. The thickness and metal atomic fraction in carbon matrix were estimated by Rutherford backscattering spectroscopy (RBS). The effect of annealing as well as heavy ion irradiation on D and G band of carbon matrix were studied by Raman spectroscopy.

Change Spectrum Characteristics Modification of Films Deposited by Magnetron Sputtering with the Assistance of Argon Ions Beam

NASA Astrophysics Data System (ADS)

Umnov, S.; Asainov, O.

2015-04-01

Thin aluminum films were prepared using the method of magnetron sputtering with and without argon ion beam assistance. The influence of argon ion beam on the reflectivity in the UV range and the structure of aluminum films was studied. The structure of the films was studied by transmission electron microscopy (TEM), X-ray diffractometry (XRD) and atomic- force microscope (AFM). The study has shown that the films deposed with the assistance of the argon ion beam have more significant microstresses associated with an increase of crystallites microstructure defects as compared to the films deposed without ion assistance. Comparison of the measured reflectivity of aluminum films deposed without and with the assistance of the ion beam has shown that the films characterized by a higher level of microstructure def ects have increased reflectivity in the UV range. The studies suggest that the defects of thin aluminum films crystal structure influence its optical properties.

Accurate on line measurements of low fluences of charged particles

NASA Astrophysics Data System (ADS)

Palla, L.; Czelusniak, C.; Taccetti, F.; Carraresi, L.; Castelli, L.; Fedi, M. E.; Giuntini, L.; Maurenzig, P. R.; Sottili, L.; Taccetti, N.

2015-03-01

Ion beams supplied by the 3MV Tandem accelerator of LABEC laboratory (INFN-Firenze), have been used to study the feasibility of irradiating materials with ion fluences reproducible to about 1%. Test measurements have been made with 7.5 MeV 7Li2+ beams of different intensities. The fluence control is based on counting ions contained in short bursts generated by chopping the continuous beam with an electrostatic deflector followed by a couple of adjustable slits. Ions are counted by means of a micro-channel plate (MCP) detecting the electrons emitted from a thin layer of Al inserted along the beam path in between the pulse defining slits and the target. Calibration of the MCP electron detector is obtained by comparison with the response of a Si detector.

Design technique for all-dielectric non-polarizing beam splitter plate

NASA Astrophysics Data System (ADS)

Rizea, A.

2012-03-01

There are many situations when, for the proper working, an opto-electronic device requiring optical components does not change the polarization state of light after a reflection, splitting or filtering. In this paper, a design for a non-polarizing beam splitter plate is proposed. Based on certain optical properties of homogeneous dielectric materials we will establish a reliable thin film package formula, excellent for the start of optimization to obtain a 20-nm bandwidth non-polarizing beam splitter.

Positron annihilation lifetime and Doppler broadening spectroscopy at the ELBE facility

NASA Astrophysics Data System (ADS)

Wagner, Andreas; Butterling, Maik; Liedke, Maciej O.; Potzger, Kay; Krause-Rehberg, Reinhard

2018-05-01

The Helmholtz-Zentrum Dresden-Rossendorf operates a superconducting linear accelerator for electrons with energies up to 35 MeV and average beam currents up to 1.6 mA with bunch charges up to 120 pC. The electron beam is employed to produce several secondary beams including X-rays from bremsstrahlung production, coherent IR light in a Free Electron Laser, superradiant THz radiation, neutrons, and positrons. The secondary positron beam after moderation feeds the Monoenergetic Positron Source (MePS) where positron annihilation lifetime (PALS) and positron annihilation Doppler-broadening experiments in materials science are performed. The adjustable repetition rate of the continuous-wave electron beams allows matching of the pulse separation to the positron lifetime in the sample under study. The energy of the positron beam can be set between 0.5 keV and 20 keV to perform depth resolved defect spectroscopy and porosity studies especially for thin films. Bulk materials, fluids, gases, and even radioactive samples can be studied at the unique Gamma-induced Positron Source (GiPS) where an intense bremsstrahlung source generates positrons directly inside the material under study. A 22Na-based monoenergetic positron beam serves for offline experiments and additional depth-resolved Doppler-broadening studies complementing both accelerator-based sources.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, A.R.; Auciello, O.

1990-05-08

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, Alan R.; Auciello, Orlando

1990-01-01

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Controlling electron beam-induced structure modifications and cation exchange in cadmium sulfide-copper sulfide heterostructured nanorods.

PubMed

Zheng, Haimei; Sadtler, Bryce; Habenicht, Carsten; Freitag, Bert; Alivisatos, A Paul; Kisielowski, Christian

2013-11-01

The atomic structure and interfaces of CdS/Cu2S heterostructured nanorods are investigated with the aberration-corrected TEAM 0.5 electron microscope operated at 80 kV and 300 kV applying in-line holography and complementary techniques. Cu2S exhibits a low-chalcocite structure in pristine CdS/Cu2S nanorods. Under electron beam irradiation the Cu2S phase transforms into a high-chalcocite phase while the CdS phase maintains its wurtzite structure. Time-resolved experiments reveal that Cu(+)-Cd(2+) cation exchange at the CdS/Cu2S interfaces is stimulated by the electron beam and proceeds within an undisturbed and coherent sulfur sub-lattice. A variation of the electron beam current provides an efficient way to control and exploit such irreversible solid-state chemical processes that provide unique information about system dynamics at the atomic scale. Specifically, we show that the electron beam-induced copper-cadmium exchange is site specific and anisotropic. A resulting displacement of the CdS/Cu2S interfaces caused by beam-induced cation interdiffusion equals within a factor of 3-10 previously reported Cu diffusion length measurements in heterostructured CdS/Cu2S thin film solar cells with an activation energy of 0.96 eV. © 2013 Elsevier B.V. All rights reserved.

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

Directed block copolymer self-assembly implemented via surface-embedded electrets

NASA Astrophysics Data System (ADS)

Wu, Mei-Ling; Wang, Dong; Wan, Li-Jun

2016-02-01

Block copolymer (BCP) nanolithography is widely recognized as a promising complementary approach to circumvent the feature size limits of conventional photolithography. The directed self-assembly of BCP thin film to form ordered nanostructures with controlled orientation and localized pattern has been the key challenge for practical nanolithography applications. Here we show that BCP nanopatterns can be directed on localized surface electrets defined by electron-beam irradiation to realize diverse features in a simple, effective and non-destructive manner. Charged electrets can generate a built-in electric field in BCP thin film and induce the formation of perpendicularly oriented microdomain of BCP film. The electret-directed orientation control of BCP film can be either integrated with mask-based patterning technique or realized by electron-beam direct-writing method to fabricate microscale arbitrary lateral patterns down to single BCP cylinder nanopattern. The electret-directed BCP self-assembly could provide an alternative means for BCP-based nanolithography, with high resolution.

Ion-beam-induced ferromagnetism in Ca-doped LaMnO3 thin films grown on Si (100)

NASA Astrophysics Data System (ADS)

Sultan, Khalid; Aarif ul Islam, Shah; Habib, Zubida; Ikram, M.; Asokan, K.

2018-04-01

The ion-bean-induced room temperature ferromagnetic ordering in pulsed laser deposited Ca-doped LaMnO3 thin films grown on Si (100) are presented in the present study. In addition to this, changes bought by the ion beam in structural, morphological and electrical properties are presented. Dense electronic excitation produced by high energy 120 MeV Ag9+ ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ion irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. It is observed that the irradiated films show higher resistance than unirradiated films for all the compositions.

Modification of polymeric surface for improved adhesion via electron beam exposure

DOEpatents

Kelber, Jeffry A.

1989-01-01

Treating polymer surfaces, e.g., Teflon, particularly very thin surfaces, e.g., 50-10,000 .ANG. with low energy electron radiation, e.g., 100-1000 eV, in a high vacuum environment, e.g., less than 10.sup.-6 Torr, to enhance the ability of the surface to be adhered to a variety of substrates.

High fidelity 3-dimensional models of beam-electron cloud interactions in circular accelerators

NASA Astrophysics Data System (ADS)

Feiz Zarrin Ghalam, Ali

Electron cloud is a low-density electron profile created inside the vacuum chamber of circular machines with positively charged beams. Electron cloud limits the peak current of the beam and degrades the beams' quality through luminosity degradation, emittance growth and head to tail or bunch to bunch instability. The adverse effects of electron cloud on long-term beam dynamics becomes more and more important as the beams go to higher and higher energies. This problem has become a major concern in many future circular machines design like the Large Hadron Collider (LHC) under construction at European Center for Nuclear Research (CERN). Due to the importance of the problem several simulation models have been developed to model long-term beam-electron cloud interaction. These models are based on "single kick approximation" where the electron cloud is assumed to be concentrated at one thin slab around the ring. While this model is efficient in terms of computational costs, it does not reflect the real physical situation as the forces from electron cloud to the beam are non-linear contrary to this model's assumption. To address the existing codes limitation, in this thesis a new model is developed to continuously model the beam-electron cloud interaction. The code is derived from a 3-D parallel Particle-In-Cell (PIC) model (QuickPIC) originally used for plasma wakefield acceleration research. To make the original model fit into circular machines environment, betatron and synchrotron equations of motions have been added to the code, also the effect of chromaticity, lattice structure have been included. QuickPIC is then benchmarked against one of the codes developed based on single kick approximation (HEAD-TAIL) for the transverse spot size of the beam in CERN-LHC. The growth predicted by QuickPIC is less than the one predicted by HEAD-TAIL. The code is then used to investigate the effect of electron cloud image charges on the long-term beam dynamics, particularly on the transverse tune shift of the beam at CERN Super Proton Synchrotron (SPS) ring. The force from the electron cloud image charges on the beam cancels the force due to cloud compression formed on the beam axis and therefore the tune shift is mainly due to the uniform electron cloud density. (Abstract shortened by UMI.)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

NASA Technical Reports Server (NTRS)

Grove, C. A.; Judd, G.; Ansell, G. S.

1972-01-01

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Thin-Film Phase Plates for Transmission Electron Microscopy Fabricated from Metallic Glasses.

PubMed

Dries, Manuel; Hettler, Simon; Schulze, Tina; Send, Winfried; Müller, Erich; Schneider, Reinhard; Gerthsen, Dagmar; Luo, Yuansu; Samwer, Konrad

2016-10-01

Thin-film phase plates (PPs) have become an interesting tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration under the intense electron-beam illumination. Recent investigations have focused on the search for alternative materials with an improved material stability. This work presents thin-film PPs fabricated from metallic glass alloys, which are characterized by a high electrical conductivity and an amorphous structure. Thin films of the zirconium-based alloy Zr65.0Al7.5Cu27.5 (ZAC) were fabricated and their phase-shifting properties were evaluated. The ZAC film was investigated by different TEM techniques, which reveal beneficial properties compared with amorphous carbon PPs. Particularly favorable is the small probability for inelastic plasmon scattering, which results from the combined effect of a moderate inelastic mean free path and a reduced film thickness due to a high mean inner potential. Small probability plasmon scattering improves contrast transfer at high spatial frequencies, which makes the ZAC alloy a promising material for PP fabrication.

Laser-plasma interactions from thin tapes for high-energy electron accelerators and seeding compact FELs

NASA Astrophysics Data System (ADS)

Shaw, Brian Henry

This thesis comprises a detailed investigation of the physics of using a plasma mirror (PM) from a tape by reflecting ultrashort pulses from a laser-triggered surface plasma. The tapes used in the characterization of the PM are VHS and computer data storage tape. The tapes are 6.6 m (computer storage tape) and 15 m (VHS) thick. Each tape is 0.5 inches wide, and 10s of meters of tape are spooled using a tape drive; providing thousands of shots on a single reel of tape. The amount of reflected energy of the PM was studied for different input intensities. The fluence was varied by translating the focus of the laser upstream and downstream of the tape, which changed the spot size on the tape surface and hence changed the fluence. This study measured reflectances from both sides of the two tapes, and for input light of both s and p-polarizations. Lastly, an analytic model was developed to understand the reflectance as a function of fluence for each tape material and polarization. Another application that benefits from the advancements of LPA technology is an LPAbased FEL. By sending a high quality electron bunch through an undulator (a periodic structure of positive and negative magnetic poles), the electrons oscillate transversely to the propagation axis and produce radiation. The 1.5 m THUNDER undulator at the BELLA Center has been commissioned using electron beams of 400MeV beams with broad energy spread (35%). To produce a coherent LPA-based FEL, the beam quality would need to improve to sub-percent level energy spread. A seed source could be used to help induce bunching of the electron beam within the undulator. This thesis described the experimental investigation of the physics of using solid-based surface high-harmonic generation (SHHG) from a thin tape as a possible seed source for an FEL. A thin tape placed within centimeters of the undulator's entrance could act as a harmonic generating source, while simultaneously transmitting an electron beam. This removes the need for transport optics for the XUV photons and the need for additional optics to overlap the seed beam with the electron beam at the undulator entrance. By operating at sub-relativistic laser strengths, harmonics up to the 17th order of 800 nm light are produced using an SHHG technique known as coherent wake emission (CWE). CWE pulse properties such as divergence, energy, conversion efficiency, and spectrum are measured for a wide range of tape materials and drive laser conditions. A clear correlation between surface roughness and harmonic beam divergence is found. The measured pulse properties for the 15th harmonic from VHS tape (conversion efficiency 6.5x10-7 and an rms divergence of 12 mrad), the 100 mJ-level, 40-50 fs-class drive laser, produces peak powers of several MW's of XUV pulses. The results of a 1D model indicate that these CWE pulses with MW level powers are sufficient for seed-induced FEL gain. (Abstract shortened by ProQuest.).

Considerable knock-on displacement of metal atoms under a low energy electron beam.

PubMed

Gu, Hengfei; Li, Geping; Liu, Chengze; Yuan, Fusen; Han, Fuzhou; Zhang, Lifeng; Wu, Songquan

2017-03-15

Under electron beam irradiation, knock-on atomic displacement is commonly thought to occur only when the incident electron energy is above the incident-energy threshold of the material in question. However, we report that when exposed to intense electrons at room temperature at a low incident energy of 30 keV, which is far below the theoretically predicted incident-energy threshold of zirconium, Zircaloy-4 (Zr-1.50Sn-0.25Fe-0.15Cr (wt.%)) surfaces can undergo considerable displacement damage. We demonstrate that electron beam irradiation of the bulk Zircaloy-4 surface resulted in a striking radiation effect that nanoscale precipitates within the surface layer gradually emerged and became clearly visible with increasing the irradiation time. Our transmission electron microscope (TEM) observations further reveal that electron beam irradiation of the thin-film Zircaly-4 surface caused the sputtering of surface α-Zr atoms, the nanoscale atomic restructuring in the α-Zr matrix, and the amorphization of precipitates. These results are the first direct evidences suggesting that displacement of metal atoms can be induced by a low incident electron energy below threshold. The presented way to irradiate may be extended to other materials aiming at producing appealing properties for applications in fields of nanotechnology, surface technology, and others.

XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Theodor; Warneke, Jonas; Zielasek, Volkmar, E-mail: zielasek@uni-bremen.de

2016-07-15

Optimizing thin metal film deposition techniques from metal-organic precursors such as atomic layer deposition, chemical vapor deposition (CVD), or electron beam-induced deposition (EBID) with the help of surface science analysis tools in ultrahigh vacuum requires a contamination-free precursor delivery technique, especially in the case of the less volatile precursors. For this purpose, the preparation of layers of undecomposed Ni(acac){sub 2} and Co(acac){sub 2} was tried via pulsed spray evaporation of a liquid solution of the precursors in ethanol into a flow of nitrogen on a CVD reactor. Solvent-free layers of intact precursor molecules were obtained when the substrate was heldmore » at a temperature of 115 °C. A qualitative comparison of thermally initiated and electron-induced precursor decomposition and metal center reduction was carried out. All deposited films were analyzed with respect to chemical composition quasi in situ by x-ray photoelectron spectroscopy. Thermally initiated decomposition yielded higher metal-to-metal oxide ratios in the deposit than the electron-induced process for which ratios of 60:40 and 20:80 were achieved for Ni and Co, resp. Compared to continuous EBID processes, all deposits showed low levels of carbon impurities of ∼10 at. %. Therefore, postdeposition irradiation of metal acetylacetonate layers by a focused electron beam and subsequent removal of intact precursor by dissolution in ethanol or by heating is proposed as electron beam lithography technique on the laboratory scale for the production of the metal nanostructures.« less

Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

2012-11-01

Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

Growth, Structural, Electronic, and Magnetic Characterization of GaN, CrN, Fe Islands on CrN, and Fe/CrN Bilayer Thin Films

NASA Astrophysics Data System (ADS)

Alam, Khan

As a part of my Ph.D research, initially I was involved in construction and calibration of an ultra-high vacuum thin film facility, and later on I studied structural, electronic, and magnetic properties of GaN, CrN, Fe/CrN bilayers, and Fe islands on CrN thin films. All of these films were grown by molecular beam epitaxy and characterized with a variety of state-of-the-art techniques including variable temperature reflection high energy electron diffraction, low temperature scanning tunneling microscopy and spectroscopy, variable temperature vibrating sample magnetometry, variable temperature neutron diffraction and reflectometry, variable temperature x-ray diffraction, x-ray reflectometry, Rutherford backscattering, Auger electron spectroscopy, and cross-sectional tunneling electron microscopy. The experimental results are furthermore understood by comparing with numerical calculations using generalized gradient approximation, local density approximation with Hubbard correction, Refl1D, and data analysis and visual environment program. In my first research project, I studied Ga gas adatoms on GaN surfaces. We discovered frozen-out gallium gas adatoms on atomically smooth c(6x12) GaN(0001¯) surface using low temperature scanning tunneling microscopy. We identified adsorption sites of the Ga adatoms on c(6x12) reconstructed surface. Their bonding is determined by measuring low unoccupied molecular orbital level. Absorption sites of the Ga gas adatoms on centered 6x12 are identified, and their asymmetric absorption on the chiral domains is investigated. In second project, I investigated magneto-structural phase transition in chromium nitride (CrN) thin films. The CrN thin films are grown by molecular beam epitaxy. Structural and magnetic transition are studied using variable temperature reflection high energy electron diffraction and variable temperature neutron diffraction. We observed a structural phase transition at the surface at 277+/-2 K, and a sharp, first-order magnetic phase transition from paramagnetic (room temperature) to antiferromagnetic (low temperature) at 280+/-3 K. Our experiments suggest that the structural transition in CrN thin films occur in out-of-plane direction, and epitaxial constraints suppress the in-plane transition; therefore, the low temperature crystal structure of CrN is tetragonal. This new model explains our structural and magnetic data at low temperatures, but it is different than the previously published orthorhombic model. In third project, I studied exchange bias and exchange spring effect in MBE grown Fe/CrN bilayer thin films. We grew Fe/CrN bilayer thin films on MgO(001) substrate by molecular beam epitaxy, and studied them using variable temperature vibrating sample magnetometry, polarized neutron reflectometry, x-ray reflectivity, and cross-sectional transmission electron microscopy. We observed exchange bias and exchange spring effect in all bilayer thin films. We studied the relationship of exchange bias, blocking temperature, and coercivity with Fe and CrN layers thicknesses. We used polarized neutron beam reflectometry to see if spins at Fe/CrN interface are pinned. We found a thin ferromagnetically ordered CrN layer at the interface. In my final project, I studied growth of submonolayer Fe islands on CrN thin films. These films are prepared in two stages: first, a CrN layer is grown by MBE and then a submonolayer Fe is deposited at room temperature from a carefully degassed e-beam evaporator. The films are studied at liquid helium temperature using low temperature scanning tunneling microscopy and spectroscopy. Islands are seen in STM images, after the Fe deposition, at the edges as well as at the center of atomically flat CrN terraces. However, numerical calculations performed by our collaborator Ponce-P'erez from Benem'erita Universidad Aut'onoma de Puebla show that the Fe islands are energetically unstable on the surface. The Fe atoms substitute Cr atoms in the surface layer and the Cr atoms comes out and form islands. In order to find out elemental composition of the islands, we attempted to map local density of state by measuring differential conductance spectra as a function of bias voltage using LT-STS. We observed three characteristically different spectra; one in the CrN substrate and two in the islands. The CrN substrate curve has a "U" shape near Fermi level and a peak at ≈ 105 mV. The islands spectra show Kondo-like resonances at Fermi level; some islands produce a peak whereas others produce a dip the dI/dV curves near Fermi level. Further investigations are needed to determine the origin of the peak and dip in the island curves, as well as to find the composition of the islands.

Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

DTIC Science & Technology

2016-09-01

confirm that the thin layers of α-Sn are slightly strained, which supports theoretical prediction that α-Sn is a 3-D topological insulator (TI...topological insulator , single crystal 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU 18. NUMBER OF...its thickness, α-Sn is a 3-D or 2-D topological insulator (TI). Three-dimensional TIs are electronic materials that have a bulk bandgap and

Selective Electron Beam Manufacturing of Ti-6Al-4V Strips: Effect of Build Orientation, Columnar Grain Orientation, and Hot Isostatic Pressing on Tensile Properties

NASA Astrophysics Data System (ADS)

Wang, J.; Tang, H. P.; Yang, K.; Liu, N.; Jia, L.; Qian, M.

2018-03-01

Many novel designs for additive manufacturing (AM) contain thin-walled (≤ 3 mm) sections in different orientations. Selective electron beam melting (SEBM) is particularly suited to AM of such thin-walled titanium components because of its high preheating temperature and high vacuum. However, experimental data on SEBM of Ti-6Al-4V thin sections remains scarce because of the difficulty and high cost of producing long, thin and smooth strip tensile specimens (see Fig. 1). In this study, 80 SEBM Ti-6Al-4V strips (180 mm long, 42 mm wide, 3 mm thick) were built both vertically (V-strips) and horizontally (H-strips). Their density, microstructure and tensile properties were investigated. The V-strips showed clearly higher tensile strengths but lower elongation than the H-strips. Hot isostatic pressing (HIP) produced the same lamellar α-β microstructures in terms of the average α-lath thickness in both types of strips. The retained prior-β columnar grain boundaries after HIP showed no measurable influence on the tensile properties, irrespective of their length and orientation, because of the formation of randomly distributed fine α-laths.[Figure not available: see fulltext.

Transmission of ˜ 10 keV electron beams through thin ceramic foils: Measurements and Monte Carlo simulations of electron energy distribution functions

NASA Astrophysics Data System (ADS)

Morozov, A.; Heindl, T.; Skrobol, C.; Wieser, J.; Krücken, R.; Ulrich, A.

2008-07-01

Electron beams with particle energy of ~10 keV were sent through 300 nm thick ceramic (Si3N4 + SiO2) foils and the resulting electron energy distribution functions were recorded using a retarding grid technique. The results are compared with Monte Carlo simulations performed with two publicly available packages, Geant4 and Casino v2.42. It is demonstrated that Geant4, unlike Casino, provides electron energy distribution functions very similar to the experimental distributions. Both simulation packages provide a quite precise average energy of transmitted electrons: we demonstrate that the maximum uncertainty of the calculated values of the average energy is 6% for Geant4 and 8% for Casino, taking into account all systematic uncertainties and the discrepancies in the experimental and simulated data.

Grazing Incidence Cross-Sectioning of Thin-Film Solar Cells via Cryogenic Focused Ion Beam: A Case Study on CIGSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sardashti, Kasra; Haight, Richard; Anderson, Ryan

2016-06-22

Cryogenic focused ion beam (Cryo-FIB) milling at near-grazing angles is employed to fabricate cross-sections on thin Cu(In,Ga)Se2 with >8x expansion in thickness. Kelvin probe force microscopy (KPFM) on sloped cross sections showed reduction in grain boundaries potential deeper into the film. Cryo Fib-KPFM enabled the first determination of the electronic structure of the Mo/CIGSe back contact, where a sub 100 nm thick MoSey assists hole extraction due to 45 meV higher work function. This demonstrates that CryoFIB-KPFM combination can reveal new targets of opportunity for improvement in thin-films photovoltaics such as high-work-function contacts to facilitate hole extraction through the backmore » interface of CIGS.« less

Excitation of THz hybrid modes in an elliptical dielectric rod waveguide with a cold collisionless unmagnetized plasma column by an annular electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahmani, Z., E-mail: z.rahmani@kashanu.ac.ir; Safari, S.; Heidari-Semiromi, E.

2016-06-15

The dispersion relation of electromagnetic waves propagating in an elliptical plasma waveguide with a cold collisionless unmagnetized plasma column and a dielectric rod is studied analytically. The frequency spectrum of the hybrid waves and the growth rate for excitation of the waves by a thin annular relativistic elliptical electron beam (TAREEB) is obtained. The effects of relative permittivity constant of dielectric rod, geometrical dimensions, plasma frequency, accelerating voltage, and current density of TAREEB on the growth rate and frequency spectra of the waveguide will be investigated.

A nanofabricated wirescanner with free standing wires: Design, fabrication and experimental results

NASA Astrophysics Data System (ADS)

Veronese, M.; Grulja, S.; Penco, G.; Ferianis, M.; Fröhlich, L.; Dal Zilio, S.; Greco, S.; Lazzarino, M.

2018-05-01

Measuring the transverse size of electron beams is of crucial importance in modern accelerators, from large colliders to free electron lasers to storage rings. For this reason several kind of beam instrumentation have been developed such as optical transition radiation screens, scintillating screens, laser scanners and wire scanners. The last ones although providing only a multishot profile in one plane have demonstrated a very high resolution. Wirescanners employ thin wires with typical thickness of the order of tens of microns that are scanned across the beam, whilst ionizing radiation generated from the impact of the electrons with the wires is detected. In this paper we describe a new approach to wirescanners design based on nanofabrication technologies opening new possibilities in term of wire shape, size, material and thickness with potential for sub-micron resolution and increase flexibility for instrumentation designers. We present a device fitted with nanofabricated wires and its fabrication process. We also report the measurements performed on the FERMI FEL electron beam with the goal of providing an online profile measurement without perturbing the FEL.

Electron-Optical System of the Gyrotron Designed for Operation in the DNP-NMR Spectrometer Cryomagnet ("Gyrotrino")

NASA Astrophysics Data System (ADS)

Bratman, V. L.; Fedotov, A. E.; Kalynov, Yu. K.; Manuilov, V. N.

2017-08-01

The formation and utilization of a helical electron beam are studied theoretically for a gyrotron with a very low operating voltage in a range 1.5-1.8 kV. Such a gyrotron ("gyrotrino") was earlier proposed for operation inside a magnetic system of an NMR spectrometer with a dynamic nuclear polarization upgrade. Despite the very low voltage, the optimization of the electrode shape can provide velocity and positional electron spreads not exceeding these values for conventional high-voltage gyrotrons. A very small cathode-anode separation makes the gyrotrino very sensitive to thermal expansion of the gun elements that should be compensated by movement of the cathode. Estimations for long-pulse and CW regimes of the gyrotrino operation show that the ion background significantly decreases the reduction of the beam potential and leads to an acceptable drift of the electron cyclotron frequency at the voltage front. A satisfactory thermal load on the waste-beam collector located in a strong uniform magnetic field can be achieved due to the omnidirectional heat flow regime occurring in the case of thin beam footprint.

Rheological properties of styrene-butadiene rubber filled with electron beam modified surface treated dual phase fillers

NASA Astrophysics Data System (ADS)

Shanmugharaj, A. M.; Bhowmick, Anil K.

2004-01-01

The rheological properties of styrene-butadiene rubber (SBR) loaded with dual phase filler were measured using Monsanto Processability Tester (MPT) at three different temperatures (100°C, 110°C and 130°C) and four different shear rates (61.3, 306.3, 613, and 1004.5 s -1). The effect of electron beam modification of dual phase filler in absence and presence of trimethylol propane triacrylate (TMPTA) or triethoxysilylpropyltetrasulphide (Si-69) on melt flow properties of SBR was also studied. The viscosity of all the systems decreases with shear rate indicating their pseudoplastic or shear thinning nature. The higher shear viscosity for the SBR loaded with the electron beam modified filler is explained in terms of variation in structure of the filler upon electron beam irradiation. Die swell of the modified filler loaded SBR is slightly higher than that of the unmodified filler loaded rubber, which is explained by calculating normal stress difference for the systems. Activation energy of the modified filler loaded SBR systems is also slightly higher than that of the control filler loaded SBR system.

The ‘cutting away’ of potential secondary electron tracks explains the effects of beam size and detector wall density in small-field photon dosimetry

NASA Astrophysics Data System (ADS)

Khee Looe, Hui; Delfs, Björn; Poppinga, Daniela; Jiang, Ping; Harder, Dietrich; Poppe, Björn

2018-01-01

The well-known field-size dependent overresponse in small-field photon-beam dosimetry of solid-state detectors equipped with very thin sensitive volumes, such as the PTW microDiamond, cannot be caused by the photon and electron interactions within these sensitive layers because they are only a few micrometers thick. The alternative explanation is that their overresponse is caused by the combination of two effects, the modification of the secondary electron fluence profile (i) by a field size too small to warrant lateral secondary electron equilibrium and (ii) by the density-dependent electron ranges in the structural detector materials placed in front of or backing the sensitive layer. The present study aims at the numerical demonstration and visualization of this combined mechanism. The lateral fluence profiles of the secondary electrons hitting a 1 µm thick scoring layer were Monte-Carlo simulated by modelling their generation and transport in the upstream or downstream adjacent layers of thickness 0.6 mm and densities from 0.0012 to 3 g cm-3, whose atomic composition was constantly kept water-like. The scoring layer/adjacent layer sandwich was placed in an infinite water phantom irradiated by circular 60Co, 6 MV and 15 MV photon beams with diameters from 3 to 40 mm. The interpretation starts from the ideal case of lateral secondary electron equilibrium, where the Fano theorem excludes any density effect. If the field size is then reduced, electron tracks potentially originating from source points outside the field border will then be numerically ‘cut away’. This geometrical effect reduces the secondary electron fluence at the field center, but the magnitude of this reduction also varies with the density-dependent electron ranges in the adjacent layers. This combined mechanism, which strongly depends on the photon spectrum, explains the field size and material density effect on the response of detectors with very thin sensitive layers used in small-field photon-beam dosimetry.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams.

PubMed

Griessbach, Irmgard; Lapp, Markus; Bohsung, Jörg; Gademann, Günther; Harder, Dietrich

2005-12-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.

Small-scale fracture toughness of ceramic thin films: the effects of specimen geometry, ion beam notching and high temperature on chromium nitride toughness evaluation

NASA Astrophysics Data System (ADS)

Best, James P.; Zechner, Johannes; Wheeler, Jeffrey M.; Schoeppner, Rachel; Morstein, Marcus; Michler, Johann

2016-12-01

For the implementation of thin ceramic hard coatings into intensive application environments, the fracture toughness is a particularly important material design parameter. Characterisation of the fracture toughness of small-scale specimens has been a topic of great debate, due to size effects, plasticity, residual stress effects and the influence of ion penetration from the sample fabrication process. In this work, several different small-scale fracture toughness geometries (single-beam cantilever, double-beam cantilever and micro-pillar splitting) were compared, fabricated from a thin physical vapour-deposited ceramic film using a focused ion beam source, and then the effect of the gallium-milled notch on mode I toughness quantification investigated. It was found that notching using a focused gallium source influences small-scale toughness measurements and can lead to an overestimation of the fracture toughness values for chromium nitride (CrN) thin films. The effects of gallium ion irradiation were further studied by performing the first small-scale high-temperature toughness measurements within the scanning electron microscope, with the consequence that annealing at high temperatures allows for diffusion of the gallium to grain boundaries promoting embrittlement in small-scale CrN samples. This work highlights the sensitivity of some materials to gallium ion penetration effects, and the profound effect that it can have on fracture toughness evaluation.

Transmission Kikuchi diffraction and transmission electron forescatter imaging of electropolished and FIB manufactured TEM specimens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zieliński, W., E-mail: wiziel@inmat.pw.edu.pl; Płociński, T.; Kurzydłowski, K.J.

2015-06-15

We present a study of the efficiency of the utility of scanning electron microscope (SEM)-based transmission methods for characterizing grain structure in thinned bulk metals. Foils of type 316 stainless steel were prepared by two methods commonly used for transmission electron microscopy — double-jet electropolishing and focused ion beam milling. A customized holder allowed positioning of the foils in a configuration appropriate for both transmission electron forward scatter diffraction, and for transmission imaging by the use of a forescatter detector with two diodes. We found that both crystallographic orientation maps and dark-field transmitted images could be obtained for specimens preparedmore » by either method. However, for both methods, preparation-induced artifacts may affect the quality or accuracy of transmission SEM data, especially those acquired by the use of transmission Kikuchi diffraction. Generally, the quality of orientation data was better for specimens prepared by electropolishing, due to the absence of ion-induced damage. - Highlights: • The transmission imaging and diffraction techniques are emerging in scanning electron microscopy (SEM) as promising new field of materials characterization. • The manuscript titled: “Transmission Kikuchi Diffraction and Transmission Electron Forescatter Imaging of Electropolished and FIB Manufactured TEM Specimens” documents how different specimen thinning procedures can effect efficiency of transmission Kikuchi diffraction and transmission electron forescatter imaging. • The abilities to make precision crystallographic orientation maps and dark-field images in transmission was studied on electropolished versus focus ion beam manufactured TEM specimens. • Depending on the need, electropolished and focused ion beam technique may produce suitable specimens for transmission imaging and diffraction in SEM.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage fade upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[LixMnyTM1-x-y]O2 , TM = Ni, Co or Fe) have recently been identified to be correlated to the gradual phase transformation, featuring the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5 nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li0.2Ni0.2Mn0.6]O2 (LMR) particles, which are identical to those reported due to the charge-dischargemore » cycle but are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200 kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by energy dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LMR is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. This study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Single Crystal Diamond Beam Position Monitors with Radiofrequency Electronic Readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solar, B.; Graafsma, H.; Potdevin, G.

2010-06-23

Over the energy range 5{approx}30 keV a suitably contacted, thin ({approx}100 {mu}m) diamond plate can be operated in situ as a continuous monitor of X-ray beam intensity and position as the diamond absorbs only a small percentage of the incident beam. Single crystal diamond is a completely homogeneous material showing fast (ns), spatially uniform signal response and negligible (

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

PubMed

Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

2012-12-01

Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

DOE PAGES

Han, Myung-Geun; Garlow, Joseph A.; Marshall, Matthew S. J.; ...

2017-03-23

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fieldsmore » and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.« less

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Structural and optical properties of ITO and Cu doped ITO thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Rechargeable thin film battery and method for making the same

DOEpatents

Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

2006-01-03

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

21ST International Symposium on Rarefied Gas Dynamics. Marseille (France) 26-31 July 1998. Book of Abstracts: Volume III, Special Session; Molecular Beams.

DTIC Science & Technology

1998-07-30

contribution we will present size dependent results absorption.of photons from two ultrashort laser pulses on the dynamics of electronic excitations in the at a... cluster beam has confirmed that the nanoparticles in the gas phase and deposited in thin laser -driven flow reactor is capable of producing films. hydrogen ...approximately 7 times larger than neutrals. MB 11 - 138 Molecular Beam Studies of Ammonia Clustered with III Group Metals Produced by Pulsed Laser Reactive

Diffraction effects and inelastic electron transport in angle-resolved microscopic imaging applications.

PubMed

Winkelmann, A; Nolze, G; Vespucci, S; Naresh-Kumar, G; Trager-Cowan, C; Vilalta-Clemente, A; Wilkinson, A J; Vos, M

2017-09-01

We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations. © 2017 The Authors. Journal of Microscopy published by JohnWiley & Sons Ltd on behalf of Royal Microscopical Society.

Bending fatigue of electron-beam-welded foils. Application to a hydrodynamic air bearing in the Chrysler/DOE upgraded automotive gas tubine engine

NASA Technical Reports Server (NTRS)

Saltsman, J. F.; Halford, G. R.

1984-01-01

A hydrodynamic air bearing with a compliment surface is used in the gas generator of an upgraded automotive gas turbine engine. In the prototype design, the compliant surface is a thin foil spot welded at one end to the bearing cartridge. During operation, the foil failed along the line of spot welds which acted as a series of stress concentrators. Because of its higher degree of geometric uniformity, electron beam welding of the foil was selected as an alternative to spot welding. Room temperature bending fatigue tests were conducted to determine the fatigue resistance of the electron beam welded foils. Equations were determined relating cycles to crack initiation and cycles to failure to nominal total strain range. A scaling procedure is presented for estimating the reduction in cyclic life when the foil is at its normal operating temperature of 260 C (500 F).

Electron beam induced radiation damage in the catalyst layer of a proton exchange membrane fuel cell.

PubMed

He, Qianping; Chen, Jihua; Keffer, David J; Joy, David C

2014-01-01

Electron microscopy is an essential tool for the evaluation of microstructure and properties of the catalyst layer (CL) of proton exchange membrane fuel cells (PEMFCs). However, electron microscopy has one unavoidable drawback, which is radiation damage. Samples suffer temporary or permanent change of the surface or bulk structure under radiation damage, which can cause ambiguity in the characterization of the sample. To better understand the mechanism of radiation damage of CL samples and to be able to separate the morphological features intrinsic to the material from the consequences of electron radiation damage, a series of experiments based on high-angle annular dark-field-scanning transmission scanning microscope (HAADF-STEM), energy filtering transmission scanning microscope (EFTEM), and electron energy loss spectrum (EELS) are conducted. It is observed that for thin samples (0.3-1 times λ), increasing the incident beam energy can mitigate the radiation damage. Platinum nanoparticles in the CL sample facilitate the radiation damage. The radiation damage of the catalyst sample starts from the interface of Pt/C or defective thin edge and primarily occurs in the form of mass loss accompanied by atomic displacement and edge curl. These results provide important insights on the mechanism of CL radiation damage. Possible strategies of mitigating the radiation damage are provided. © 2013 Wiley Periodicals, Inc.

Validation of the MCNP6 electron-photon transport algorithm: multiple-scattering of 13- and 20-MeV electrons in thin foils

NASA Astrophysics Data System (ADS)

Dixon, David A.; Hughes, H. Grady

2017-09-01

This paper presents a validation test comparing angular distributions from an electron multiple-scattering experiment with those generated using the MCNP6 Monte Carlo code system. In this experiment, a 13- and 20-MeV electron pencil beam is deflected by thin foils with atomic numbers from 4 to 79. To determine the angular distribution, the fluence is measured down range of the scattering foil at various radii orthogonal to the beam line. The characteristic angle (the angle for which the max of the distribution is reduced by 1/e) is then determined from the angular distribution and compared with experiment. Multiple scattering foils tested herein include beryllium, carbon, aluminum, copper, and gold. For the default electron-photon transport settings, the calculated characteristic angle was statistically distinguishable from measurement and generally broader than the measured distributions. The average relative difference ranged from 5.8% to 12.2% over all of the foils, source energies, and physics settings tested. This validation illuminated a deficiency in the computation of the underlying angular distributions that is well understood. As a result, code enhancements were made to stabilize the angular distributions in the presence of very small substeps. However, the enhancement only marginally improved results indicating that additional algorithmic details should be studied.

Large-aperture plasma-assisted deposition of inertial confinement fusion laser coatings.

PubMed

Oliver, James B; Kupinski, Pete; Rigatti, Amy L; Schmid, Ansgar W; Lambropoulos, John C; Papernov, Semyon; Kozlov, Alexei; Spaulding, John; Sadowski, Daniel; Chrzan, Z Roman; Hand, Robert D; Gibson, Desmond R; Brinkley, Ian; Placido, Frank

2011-03-20

Plasma-assisted electron-beam evaporation leads to changes in the crystallinity, density, and stresses of thin films. A dual-source plasma system provides stress control of large-aperture, high-fluence coatings used in vacuum for substrates 1m in aperture.

Optical and structural properties of cobalt-permalloy slanted columnar heterostructure thin films

NASA Astrophysics Data System (ADS)

Sekora, Derek; Briley, Chad; Schubert, Mathias; Schubert, Eva

2017-11-01

Optical and structural properties of sequential Co-column-NiFe-column slanted columnar heterostructure thin films with an Al2O3 passivation coating are reported. Electron-beam evaporated glancing angle deposition is utilized to deposit the sequential multiple-material slanted columnar heterostructure thin films. Mueller matrix generalized spectroscopic ellipsometry data is analyzed with a best-match model approach employing the anisotropic Bruggeman effective medium approximation formalism to determine bulk-like and anisotropic optical and structural properties of the individual Co and NiFe slanted columnar material sub-layers. Scanning electron microscopy is applied to image the Co-NiFe sequential growth properties and to verify the results of the ellipsometric analysis. Comparisons to single-material slanted columnar thin films and optically bulk solid thin films are presented and discussed. We find that the optical and structural properties of each material sub-layer of the sequential slanted columnar heterostructure film are distinct from each other and resemble those of their respective single-material counterparts.

High power microwave generator

DOEpatents

Ekdahl, Carl A.

1986-01-01

A microwave generator efficiently converts the energy of an intense relativistic electron beam (REB) into a high-power microwave emission using the Smith-Purcell effect which is related to Cerenkov radiation. Feedback for efficient beam bunching and high gain is obtained by placing a cylindrical Smith-Purcell transmission grating on the axis of a toroidal resonator. High efficiency results from the use of a thin cold annular highly-magnetized REB that is closely coupled to the resonant structure.

High power microwave generator

DOEpatents

Ekdahl, C.A.

1983-12-29

A microwave generator efficiently converts the energy of an intense relativistic electron beam (REB) into a high-power microwave emission using the Smith-Purcell effect which is related to Cerenkov radiation. Feedback for efficient beam bunching and high gain is obtained by placing a cylindrical Smith-Purcell transmission grating on the axis of a toroidal resonator. High efficiency results from the use of a thin cold annular highly-magnetized REB that is closely coupled to the resonant structure.

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

NASA Astrophysics Data System (ADS)

Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-04-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Ultralow emittance, multi-MeV proton beams from a laser virtual-cathode plasma accelerator.

PubMed

Cowan, T E; Fuchs, J; Ruhl, H; Kemp, A; Audebert, P; Roth, M; Stephens, R; Barton, I; Blazevic, A; Brambrink, E; Cobble, J; Fernández, J; Gauthier, J-C; Geissel, M; Hegelich, M; Kaae, J; Karsch, S; Le Sage, G P; Letzring, S; Manclossi, M; Meyroneinc, S; Newkirk, A; Pépin, H; Renard-LeGalloudec, N

2004-05-21

The laminarity of high-current multi-MeV proton beams produced by irradiating thin metallic foils with ultraintense lasers has been measured. For proton energies >10 MeV, the transverse and longitudinal emittance are, respectively, <0.004 mm mrad and <10(-4) eV s, i.e., at least 100-fold and may be as much as 10(4)-fold better than conventional accelerator beams. The fast acceleration being electrostatic from an initially cold surface, only collisions with the accelerating fast electrons appear to limit the beam laminarity. The ion beam source size is measured to be <15 microm (FWHM) for proton energies >10 MeV.

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

DOE PAGES

Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

2017-09-01

We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

Kinetic description of electron beams in the solar chromosphere

NASA Technical Reports Server (NTRS)

Gomez, Daniel O.; Mauas, Pablo J.

1992-01-01

We formulate the relativistic Fokker-Plank equation for a beam of accelerated electrons interacting with a partially ionized plasma. In our derivation we conserved those terms contributing to velocity diffusion and found that this effect cannot be neglected a priori. We compute the terms accounting for elastic and inelastic collisions with neutral hydrogen and helium. Collisions with neutral hydrogen are found to be dominant throughout the chromosphere, except at the uppermost layers close to the transition region. As an application, we compute the loss of energy and momentum for a power-law beam impinging on the solar chromosphere, for a particular case in which the Fokker-Planck equation can be integrated analytically. We find that most of the beam energy is deposited in a relatively thin region of the chromosphere, a result which is largely insensitive to the theoretical method employed to compute the energy deposition rate.

First Observations of Laser-Driven Acceleration of Relativistic Electrons in a Semi-Infinite Vacuum Space

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plettner, T.; Byer, R.L.; Smith, T.I.

2006-02-17

We have observed acceleration of relativistic electrons in vacuum driven by a linearly polarized visible laser beam incident on a thin gold-coated reflective boundary. The observed energy modulation effect follows all the characteristics expected for linear acceleration caused by a longitudinal electric field. As predicted by the Lawson-Woodward theorem the laser driven modulation only appears in the presence of the boundary. It shows a linear dependence with the strength of the electric field of the laser beam and also it is critically dependent on the laser polarization. Finally, it appears to follow the expected angular dependence of the inverse transitionmore » radiation process. experiment as the Laser Electron Accelerator Project (LEAP).« less

Oxide-free aC/Zr0.65Al0.075Cu0.275/aC phase plates for transmission electron microscopy.

PubMed

Dries, M; Obermair, M; Hettler, S; Hermann, P; Seemann, K; Seifried, F; Ulrich, S; Fischer, R; Gerthsen, D

2018-06-01

Thin-film phase plates (PP) have become a valuable tool for the imaging of organic objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon (aC), which undergoes rapid aging under intense illumination with high-energy electrons. The limited lifetime of aC film PPs calls for alternative PP materials with improved material stability. This work presents thin-film PPs fabricated from the metallic glass alloy Zr 0.65 Al 0.075 Cu 0.275 (ZAC), which was identified as a promising PP material with beneficial properties, such as a large inelastic mean free path. An adverse effect of the ZAC alloy is the formation of a surface oxide layer in ambient air, which reduces the electrical conductivity and causes electrostatic charging in the electron beam. To avoid surface oxidation, the ZAC alloy is enclosed by thin aC layers. The resulting aC/ZAC/aC layer system is used to fabricate Zernike and Hilbert PPs. Phase-contrast TEM imaging is demonstrated for a sample of carbon nanotubes, which show strong contrast enhancement in PP TEM images. Copyright © 2018 Elsevier B.V. All rights reserved.

Role of sublayers in mechanical response of pulsed electron beam irradiated surface layers to contact load

NASA Astrophysics Data System (ADS)

Konovalenko, Igor S.

2017-12-01

Here we develop the movable cellular automaton method based a numerical model of surface layers in a NiCr-TiC metal ceramic composite modified by pulsed electron beam irradiation in inert gas plasmas. The model explicitly takes into account the presence of several sublayers differing in structure and mechanical properties. The contribution of each sublayer to the mechanical response of the modified surface to contact loading is studied. It is shown that the maximum strength and fracture toughness are achieved in surface layers containing thin and stiff external sublayers and a more ductile thick internal sublayer.

Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator

NASA Astrophysics Data System (ADS)

Inoue, Tomoyasu; Hamasaki, Toshihiko

1987-04-01

A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed opening, which is due to nonuniformity in heat dissipation toward the substrate in the vicinity of the seed opening. The molten zone width and velocities of the melt front and growth front were quantitatively analyzed using digital film motion analysis. The growth front velocity was found to drastically change by ˜30% across the seed opening.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Radiation hardness studies of CdTe thin films for clinical high-energy photon beam detectors

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Parsai, E. I.; Kang, J.

2008-02-01

In radiation oncology applications, the need for higher-quality images has been driven by recent advances in radiation delivery systems that require online imaging. The existing electronic imaging devices commonly used to acquire portal images implement amorphous silicon (a-Si) detector, which exhibits poor image quality. Efforts for improvement have mostly been in the areas of noise and scatter reduction through software. This has not been successful due to inherent shortcomings of a-Si material. Cadmium telluride (CdTe) semiconductor has long been recognized as highly suitable for use in X-ray detectors in both spectroscopic and imaging applications. Development of such systems has mostly concentrated on single crystal CdTe. Recent advances in thin-film deposition technology suggest replacement of crystalline material with its polycrystalline counterpart, offering ease of large-area device fabrication and achievement of higher resolution as well as a favorable cost difference. While bulk CdTe material was found to have superior radiation hardness, thin films have not been evaluated from that prospective, in particular under high-energy photon beam typical of radiation treatment applications. We assess the performance of thin-film CdTe devices utilizing 6 MeV photon beam and find no consistent trend for material degradation under doses far exceeding the typical radiation therapy detector lifetime dose.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cullen, David A; Koestner, Roland; Kukreja, Ratan

Improved conditions for imaging and spectroscopic mapping of thin perfluorosulfonic acid (PFSA) ionomer layers in fuel cell electrodes by scanning transmission electron microscopy (STEM) have been investigated. These conditions are first identified on model systems of Nafion ionomer-coated nanostructured thin films and nanoporous Si. The optimized conditions are then applied in a quantitative study of the ionomer through-layer loading for two typical electrode catalyst coatings using electron energy loss and energy dispersive X-ray spectroscopy in the transmission electron microscope. The e-beam induced damage to the perfluorosulfonic acid (PFSA) ionomer is quantified by following the fluorine mass loss with electron exposuremore » and is then mitigated by a few orders of magnitude using cryogenic specimen cooling and a higher incident electron voltage. Multivariate statistical analysis is also applied to the analysis of spectrum images for data denoising and unbiased separation of independent components related to the catalyst, ionomer, and support.« less

Scanning electron microscopy of the trabecular meshwork: understanding the pathogenesis of primary angle closure glaucoma.

PubMed

Sihota, Ramanjit; Goyal, Amita; Kaur, Jasbir; Gupta, Viney; Nag, Tapas C

2012-01-01

To study ultrastructural changes of the trabecular meshwork in acute and chronic primary angle closure glaucoma (PACG) and primary open angle glaucoma (POAG) eyes by scanning electron microscopy. Twenty-one trabecular meshwork surgical specimens from consecutive glaucomatous eyes after a trabeculectomy and five postmortem corneoscleral specimens were fixed immediately in Karnovsky solution. The tissues were washed in 0.1 M phosphate buffer saline, post-fixed in 1% osmium tetraoxide, dehydrated in acetone series (30-100%), dried and mounted. Normal trabecular tissue showed well-defined, thin, cylindrical uveal trabecular beams with many large spaces, overlying flatter corneoscleral beams and numerous smaller spaces. In acute PACG eyes, the trabecular meshwork showed grossly swollen, irregular trabecular endothelial cells with intercellular and occasional basal separation with few spaces. Numerous activated macrophages, leucocytes and amorphous debris were present. Chronic PACG eyes had a few, thickened posterior uveal trabecular beams visible. A homogenous deposit covered the anterior uveal trabeculae and spaces. Converging, fan-shaped trabecular beam configuration corresponded to gonioscopic areas of peripheral anterior synechiae. In POAG eyes, anterior uveal trabecular beams were thin and strap-like, while those posteriorly were wide, with a homogenous deposit covering and bridging intertrabecular spaces, especially posteriorly. Underlying corneoscleral trabecular layers and spaces were visualized in some areas. In acute PACG a marked edema of the endothelium probably contributes for the acute and marked intraocular pressure (IOP) elevation. Chronically raised IOP in chronic PACG and POAG probably results, at least in part, from decreased aqueous outflow secondary to widening and fusion of adjacent trabecular beams, together with the homogenous deposit enmeshing trabecular beams and spaces.

Fabrication of meso- and nano-scale structures on surfaces of chalcogenide semiconductors by surface hydrodynamic interference patterning

NASA Astrophysics Data System (ADS)

Bilanych, V.; Komanicky, V.; Lacková, M.; Feher, A.; Kuzma, V.; Rizak, V.

2015-10-01

We observe the change of surface relief on amorphous Ge-As-Se thin films after irradiation with an electron beam. The beam softens the glass and induces various topological surface changes in the irradiated area. The film relief change depends on the film thickness, deposited charge, and film composition. Various structures are formed: Gausian-like cones, extremely sharp Taylor cones, deep craters, and craters with large spires grown on the side. Our investigation shows that these effects can be at least partially a result of electro-hydrodynamic material flow, but the observed phenomena are likely more complex. When we irradiated structural patterns formed by the electron beam with a red laser beam, we could not only fully relax the produced patterns, but also form very complex and intricate superstructures. These organized meso- and nano-scale structures are formed by a combination of photo-induced structural relaxation, light interference on structures fabricated by the e-beam, and photo-induced material flow.

Damage evaluation of proton irradiated titanium deuteride thin films to be used as neutron production targets

NASA Astrophysics Data System (ADS)

Suarez Anzorena, Manuel; Bertolo, Alma A.; Gagetti, Leonardo; Gaviola, Pedro A.; del Grosso, Mariela F.; Kreiner, Andrés J.

2018-06-01

Titanium deuteride thin films have been manufactured under different conditions specified by deuterium gas pressure, substrate temperature and time. The films were characterized by different techniques to evaluate the deuterium content and the homogeneity of such films. Samples with different concentrations of deuterium, including non deuterated samples, were irradiated with a 150 keV proton beam. Both deposits, pristine and irradiated, were characterized by optical profilometry and scanning electron microscopy.

Two-Dimensional Animal-Like Fractals in Thin Films

NASA Astrophysics Data System (ADS)

Gao, Hong-jun; Xue, Zeng-quan; Wu, Quan-de; Pang, Shi-jin

1996-02-01

We present a few unique animal-like fractal patterns in ionized-cluster-beam deposited fullerene-tetracyanoquinodimethane thin films. The fractal patterns consisting of animal-like aggregates such as "fishes" and "quasi-seahorses" have been characterized by transmission electron microscopy. The results indicate that the small aggregates of the animal-like body are composed of many single crystals whose crystalline directions are generally different. The formation of the fractal patterns can be attributed to the cluster-diffusion-limited aggregation.

Formation of 4H-closely packed structure in thin films of metastable nanocrystalline Co 13Cu 87 alloy

NASA Astrophysics Data System (ADS)

Khalyapin, D. L.; Kim, J.; Stolyar, S. V.; Turpanov, I. A.; Kim, P. D.; Kim, I.

2003-11-01

The crystal structure of the thin films of metastable Co 13Cu 87 alloy prepared by magnetron sputtering was investigated by transmission electron microscope. As-deposited films have a nanocrystal structure with an fcc lattice. As a result of the prolonged ion polishing with a beam of Ar ions with the energy of 4.7 keV, the four-layer 4H dhcp structure was formed.

Tuning the Kondo effect in thin Au films by depositing a thin layer of Au on molecular spin-dopants.

PubMed

Ataç, D; Gang, T; Yilmaz, M D; Bose, S K; Lenferink, A T M; Otto, C; de Jong, M P; Huskens, J; van der Wiel, W G

2013-09-20

We report on the tuning of the Kondo effect in thin Au films containing a monolayer of cobalt(II) terpyridine complexes by altering the ligand structure around the Co(2+) ions by depositing a thin Au capping layer on top of the monolayer on Au by magnetron sputtering (more energetic) and e-beam evaporation (softer). We show that the Kondo effect is slightly enhanced with respect to that of the uncapped film when the cap is deposited by evaporation, and significantly enhanced when magnetron sputtering is used. The Kondo temperature (TK) increases from 3 to 4.2/6.2 K for the evaporated/sputtered caps. X-ray absorption spectroscopy and surface-enhanced Raman spectroscopy investigation showed that the organic ligands remain intact upon Au e-beam evaporation; however, sputtering inflicts significant change in the Co(2+) electronic environment. The location of the monolayer-on the surface or embedded in the film-has a small effect. However, the damage of Co-N bonds induced by sputtering has a drastic effect on the increase of the impurity-electron interaction. This opens up the way for tuning of the magnetic impurity states, e.g. spin quantum number, binding energy with respect to the host Fermi energy, and overlap via the ligand structure around the ions.

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

NASA Astrophysics Data System (ADS)

Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

2013-03-01

Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

Molecular beam epitaxy growth of SmB6+/-δ thin films

NASA Astrophysics Data System (ADS)

Hoffman, Jason; Saleem, Muhammad; Day, James; Bonn, Doug; Hoffman, Jennifer

SmB6 has emerged as a leading candidate in the search for exotic topological states generated by strong interactions. The synthesis of epitaxial SmB6 thin films presents new avenues to control surface termination, thickness, and strain in this system. In this work, we use molecular beam epitaxy (MBE) to deposit SmB6+/-δ films on insulating (001)-oriented MgO substrates. We use ex-situ x-ray diffraction and magnetotransport measurements to assess the properties of the samples and compare them to previously reported values for single crystals. We also discuss the prospects of using rare-earth substitution to control the correlation strength and alter the topology of the bulk and surface electronic states.

Structural and optical properties of Sb65Se35-xGex thin films

NASA Astrophysics Data System (ADS)

Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

2011-07-01

Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

Stabilizing laser energy density on a target during pulsed laser deposition of thin films

DOEpatents

Dowden, Paul C.; Jia, Quanxi

2016-05-31

A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

Laser beam-profile impression and target thickness impact on laser-accelerated protons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schollmeier, M.; Harres, K.; Nuernberg, F.

Experimental results on the influence of the laser focal spot shape onto the beam profile of laser-accelerated protons from gold foils are reported. The targets' microgrooved rear side, together with a stack of radiochromic films, allowed us to deduce the energy-dependent proton source-shape and size, respectively. The experiments show, that shape and size of the proton source depend only weakly on target thickness as well as shape of the laser focus, although they strongly influence the proton's intensity distribution. It was shown that the laser creates an electron beam that closely follows the laser beam topology, which is maintained duringmore » the propagation through the target. Protons are then accelerated from the rear side with an electron created electric field of a similar shape. Simulations with the Sheath-Accelerated Beam Ray-tracing for IoN Analysis code SABRINA, which calculates the proton distribution in the detector for a given laser-beam profile, show that the electron distribution during the transport through a thick target (50 {mu}m Au) is only modified due to multiple small angle scattering. Thin targets (10 {mu}m) show large source sizes of over 100 {mu}m diameter for 5 MeV protons, which cannot be explained by multiple scattering only and are most likely the result of refluxing electrons.« less

Diverse Electron-Induced Optical Emissions from Space Observatory Materials at Low Temperatures

NASA Technical Reports Server (NTRS)

Dennison, J.R.; Jensen, Amberly Evans; Wilson, Gregory; Dekany, Justin; Bowers, Charles W.; Meloy, Robert

2013-01-01

Electron irradiation experiments have investigated the diverse electron-induced optical and electrical signatures observed in ground-based tests of various space observatory materials at low temperature. Three types of light emission were observed: (i); long-duration cathodoluminescence which persisted as long as the electron beam was on (ii) short-duration (<1 s) arcing, resulting from electrostatic discharge; and (iii) intermediate-duration (100 s) glow-termed "flares". We discuss how the electron currents and arcing-as well as light emission absolute intensity and frequency-depend on electron beam energy, power, and flux and the temperature and thickness of different bulk (polyimides, epoxy resins, and silica glasses) and composite dielectric materials (disordered SiO2 thin films, carbon- and fiberglass-epoxy composites, and macroscopically-conductive carbon-loaded polyimides). We conclude that electron-induced optical emissions resulting from interactions between observatory materials and the space environment electron flux can, in specific circumstances, make significant contributions to the stray light background that could possibly adversely affect the performance of space-based observatories.

Environmental TEM study of electron beam induced electro-chemistry of Pr₀̣₆₄Ca₀̣₃₆MnO₃ catalysts for oxygen evolution

DOE PAGES

Mildner, Stephanie; Beleggia, Marco; Mierwaldt, Daniel; ...

2015-03-12

Environmental Transmission Electron Microscopy (ETEM) studies offer great potential for gathering atomic scale information on the electronic state of electrodes in contact with reactants but also pose big challenges due to the impact of the high energy electron beam. In this article, we present an ETEM study of a Pr₀̣₆₄Ca₀̣₃₆MnO₃ (PCMO) thin film electro-catalyst for water splitting and oxygen evolution in contact with water vapor. We show by means of off-axis electron holography and electrostatic modeling that the electron beam gives rise to a positive electric sample potential due to secondary electron emission. The value of the electric potential dependsmore » on the primary electron flux, the sample -conductivity and grounding, and gas properties. We present evidence that two observed electro-chemical reactions are driven by a beam induced electrostatic potential of the order of a volt. The first reaction is an anodic electrochemical oxidation reaction of oxygen depleted amorphous PCMO which results in recrystallization of the perovskite structure. The second reaction is oxygen evolution which can be detected by the oxidation of a silane additive and formation of SiO 2–x at catalytically active surfaces. Recently published in-situ XANES observation of subsurface oxygen vacancy formation during oxygen evolution at a positive potential [³²] is confirmed in this work. The quantification of beam induced potentials is an important step for future controlled electro-chemical experiments in an ETEM.« less

Grafted Polystyrene Monolayer Brush as Both Negative and Positive Tone Electron Beam Resist.

PubMed

Aydinoglu, Ferhat; Yamada, Hirotaka; Dey, Ripon K; Cui, Bo

2017-05-23

Although spin coating is the most widely used electron-beam resist coating technique in nanolithography, it cannot typically be applied for nonflat or irregular surfaces. Here, we demonstrate that monolayer polystyrene brush can be grafted on substrates and used as both positive and negative electron-beam resist, which can be applied for such unconventional surfaces. Polystyrene is a popular negative resist when using solvent developer but solvent cannot be used for grafted polystyrene brush that is firmly bonded to the substrate. Instead, we employed two unconventional development methods to lead polystyrene brush to positive or negative tone behavior. Negative tone was achieved by thermal development at 300 °C because exposed thus cross-linked polystyrene brush is more thermally stable against vaporization than unexposed linear one. Surprisingly, positive tone behavior occurred when the brush was grafted onto an aluminum (Al) layer and the film stack was developed using diluted hydrofluoric acid (HF) that etched the underlying Al layer. By transferring the patterns into the silicon (Si) substrates using the thin Al layer as a sacrificial hard mask for dry etch, well-defined structures in Si were obtained in two different electron-beam resist tones as well as in nonflat surfaces.

Water Sorption in Electron-Beam Evaporated SiO2 on QCM Crystals and Its Influence on Polymer Thin Film Hydration Measurements.

PubMed

Kushner, Douglas I; Hickner, Michael A

2017-05-30

Spectroscopic ellipsometry (SE) and quartz crystal microbalance (QCM) measurements are two critical characterization techniques routinely employed for hydration studies of polymer thin films. Water uptake by thin polymer films is an important area of study to investigate antifouling surfaces, to probe the swelling of thin water-containing ionomer films, and to conduct fundamental studies of polymer brush hydration and swelling. SiO 2 -coated QCM crystals, employed as substrates in many of these hydration studies, show porosity in the thin electron-beam (e-beam) evaporated SiO 2 layer. The water sorption into this porous SiO 2 layer requires correction of the optical and mass characterization of the hydrated polymer due to changes in the SiO 2 layer as it sorbs water. This correction is especially important when experiments on SiO 2 -coated QCM crystals are compared to measurements on Si wafers with dense native SiO 2 layers. Water adsorption filling void space during hydration in ∼200-260 nm thick SiO 2 layers deposited on a QCM crystal resulted in increased refractive index of the layer during water uptake experiments. The increased refractive index led to artificially higher polymer swelling in the optical modeling of the hydration experiments. The SiO 2 -coated QCM crystals showed between 6 and 8% void as measured by QCM and SE, accounting for 60%-85% of the measured polymer swelling in the low humidity regime (<20% RH) and 25%-40% of the polymer swelling in the high humidity regime (>70% RH) from optical modeling for 105 and 47 nm thick sulfonated polymer films. Correcting the refractive index of the SiO 2 layer for its water content resulted in polymer swelling that successfully resembled swelling measured on a silicon wafer with nonporous native oxide.

Energy-Recovery Linacs for Commercial Radioisotope Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Rolland Paul

Most radioisotopes are produced by nuclear reactors or positive ion accelerators, which are expensive to construct and to operate. Photonuclear reactions using bremsstrahlung photon beams from less-expensive electron linacs can generate isotopes of critical interest, but much of the beam energy in a conventional electron linac is dumped at high energy, making unwanted radioactivation. The largest part of this radioactivation may be completely eliminated by applying energy recovery linac technology to the problem with an additional benefit that the energy cost to produce a given amount of isotope is reduced. Consequently, a Superconducting Radio Frequency (SRF) Energy Recovery Linac (ERL)more » is a path to a more diverse and reliable domestic supply of short-lived, high-value, high-demand isotopes at a cost lower than that of isotopes produced by reactors or positive-ion accelerators. A Jefferson Lab approach to this problem involves a thin photon production radiator, which allows the electron beam to recirculate through rf cavities so the beam energy can be recovered while the spent electrons are extracted and absorbed at a low enough energy to minimize unwanted radioactivation. The thicker isotope photoproduction target is not in the beam. MuPlus, with Jefferson Lab and Niowave, proposed to extend this ERL technology to the commercial world of radioisotope production. In Phase I we demonstrated that 1) the ERL advantage for producing radioisotopes is at high energies (~100 MeV), 2) the range of acceptable radiator thickness is narrow (too thin and there is no advantage relative to other methods and too thick means energy recovery is too difficult), 3) using optics techniques developed under an earlier STTR for collider low beta designs greatly improves the fraction of beam energy that can be recovered (patent pending), 4) many potentially useful radioisotopes can be made with this ERL technique that have never before been available in significant commercial quantities. We developed a plan for the Phase II project that started with a Conceptual Design Report (CDR) based on the results of the Phase I studies and concluded with a Technical Design Report (TDR) for a facility to make isotopes that are most attractive based on market analyses.« less

Degradation of Methylammonium Lead Iodide Perovskite Structures through Light and Electron Beam Driven Ion Migration

PubMed Central

2016-01-01

Organometal halide perovskites show promising features for cost-effective application in photovoltaics. The material instability remains a major obstacle to broad application because of the poorly understood degradation pathways. Here, we apply simultaneous luminescence and electron microscopy on perovskites for the first time, allowing us to monitor in situ morphology evolution and optical properties upon perovskite degradation. Interestingly, morphology, photoluminescence (PL), and cathodoluminescence of perovskite samples evolve differently upon degradation driven by electron beam (e-beam) or by light. A transversal electric current generated by a scanning electron beam leads to dramatic changes in PL and tunes the energy band gaps continuously alongside film thinning. In contrast, light-induced degradation results in material decomposition to scattered particles and shows little PL spectral shifts. The differences in degradation can be ascribed to different electric currents that drive ion migration. Moreover, solution-processed perovskite cuboids show heterogeneity in stability which is likely related to crystallinity and morphology. Our results reveal the essential role of ion migration in perovskite degradation and provide potential avenues to rationally enhance the stability of perovskite materials by reducing ion migration while improving morphology and crystallinity. It is worth noting that even moderate e-beam currents (86 pA) and acceleration voltages (10 kV) readily induce significant perovskite degradation and alter their optical properties. Therefore, attention has to be paid while characterizing such materials using scanning electron microscopy or transmission electron microscopy techniques. PMID:26804213

Plasma diagnosis as a tool for the determination of the parameters of electron beam evaporation and sources of ionization

NASA Astrophysics Data System (ADS)

Mukherjee, Jaya; Dileep Kumar, V.; Yadav, S. P.; Barnwal, Tripti A.; Dikshit, Biswaranjan

2016-07-01

The atomic vapor generated by electron beam heating is partially ionized due to atom-atom collisions (Saha ionization) and electron impact ionization, which depend upon the source temperature and area of evaporation as compared to the area of electron beam bombardment on the target. When electron beam evaporation is carried out by inserting the target inside an insulating liner to reduce conductive heat loss, it is expected that the area of evaporation becomes significantly more than the area of electron beam bombardment on the target, resulting in reduced electron impact ionization. To assess this effect and to quantify the parameters of evaporation, such as temperature and area of evaporation, we have carried out experiments using zirconium, tin and aluminum as a target. By measuring the ion content using a Langmuir probe, in addition to measuring the atomic vapor flux at a specific height, and by combining the experimental data with theoretical expressions, we have established a method for simultaneously inferring the source temperature, evaporation area and ion fraction. This assumes significance because the temperature cannot be reliably measured by an optical pyrometer due to the wavelength dependent source emissivity and reflectivity of thin film mirrors. In addition, it also cannot be inferred from only the atomic flux data at a certain height as the area of evaporation is unknown (it can be much more than the area of electron bombardment, especially when the target is placed in a liner). Finally, the reason for the lower observed electron temperatures of the plasma for all the three cases is found to be the energy loss due to electron impact excitation of the atomic vapor during its expansion from the source.

Studying localized corrosion using liquid cell transmission electron microscopy

DOE PAGES

Chee, See Wee; Pratt, Sarah H.; Hattar, Khalid; ...

2014-11-07

Using liquid cell transmission electron microscopy (LCTEM), localized corrosion of Cu and Al thin films immersed in aqueous NaCl solutions was studied. We demonstrate that potentiostatic control can be used to initiate pitting and that local compositional changes, due to focused ion beam implantation of Au + ions, can modify the corrosion susceptibility of Al films. Likewise, a discussion on strategies to control the onset of pitting is also presented.

Micro-thermocouple on nano-membrane: thermometer for nanoscale measurements.

PubMed

Balčytis, Armandas; Ryu, Meguya; Juodkazis, Saulius; Morikawa, Junko

2018-04-20

A thermocouple of Au-Ni with only 2.5-μm-wide electrodes on a 30-nm-thick Si 3 N 4 membrane was fabricated by a simple low-resolution electron beam lithography and lift off procedure. The thermocouple is shown to be sensitive to heat generated by laser as well as an electron beam. Nano-thin membrane was used to reach a high spatial resolution of energy deposition and to realise a heat source of sub-1 μm diameter. This was achieved due to a limited generation of secondary electrons, which increase a lateral energy deposition. A low thermal capacitance of the fabricated devices is useful for the real time monitoring of small and fast temperature changes, e.g., due to convection, and can be detected through an optical and mechanical barrier of the nano-thin membrane. Temperature changes up to ~2 × 10 5 K/s can be measured at 10 kHz rate. A simultaneous down-sizing of both, the heat detector and heat source strongly required for creation of thermal microscopy is demonstrated. Peculiarities of Seebeck constant (thermopower) dependence on electron injection into thermocouple are discussed. Modeling of thermal flows on a nano-membrane with presence of a micro-thermocouple was carried out to compare with experimentally measured temporal response.

Enhancing the electron mobility of SrTiO3 with strain

NASA Astrophysics Data System (ADS)

Jalan, Bharat; Allen, S. James; Beltz, Glenn E.; Moetakef, Pouya; Stemmer, Susanne

2011-03-01

We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm2/V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.

High Energy Electron Detection with ATIC

NASA Technical Reports Server (NTRS)

Chang, J.; Schmidt, W. K. H.; Adams, James H., Jr.; Ahn, H.; Ampe, J.; Whitaker, Ann F. (Technical Monitor)

2001-01-01

The ATIC (Advanced Thin Ionization Calorimeter) balloon-borne ionization calorimeter is well suited to record and identify high energy cosmic ray electrons. The instrument was exposed to high-energy beams at CERN H2 bean-dine in September of 1999. We have simulated the performance of the instrument, and compare the simulations with actual high energy electron exposures at the CERN accelerator. Simulations and measurements do not compare exactly, in detail, but overall the simulations have predicted actual measured behavior quite well.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

NASA Astrophysics Data System (ADS)

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

2017-10-01

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Surface-plasmon-polariton hybridized cavity modes in submicrometer slits in a thin Au film

NASA Astrophysics Data System (ADS)

Walther, R.; Fritz, S.; Müller, E.; Schneider, R.; Maniv, T.; Cohen, H.; Matyssek, C.; Busch, K.; Gerthsen, D.

2016-06-01

The excitation of cavity standing waves in double-slit structures in thin gold films, with slit lengths between 400 and 2560 nm, was probed with a strongly focused electron beam in a transmission electron microscope. The energies and wavelengths of cavity modes up to the 11 th mode order were measured with electron energy loss spectroscopy to derive the corresponding dispersion relation. For all orders, a significant redshift of mode energies accompanied by a wavelength elongation relative to the expected resonator energies and wavelengths is observed. The resultant dispersion relation is found to closely follow the well-known dispersion law of surface-plasmon polaritons (SPPs) propagating on a gold/air interface, thus providing direct evidence for the hybridized nature of the detected cavity modes with SPPs.

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

NASA Technical Reports Server (NTRS)

Vonross, O.

1980-01-01

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

DOE PAGES

Sinclair, Robert; Lee, Sang Chul; Shi, Yezhou; ...

2017-03-18

Here, we have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e-/Å 2s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower losemore » rates (ca. 2600 e-/Å 2s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce 3+ versus Ce 4+ cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface.« less

Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinclair, Robert; Lee, Sang Chul; Shi, Yezhou

Here, we have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e-/Å 2s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower losemore » rates (ca. 2600 e-/Å 2s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce 3+ versus Ce 4+ cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface.« less

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS 2

DOE PAGES

Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; ...

2015-01-16

We study the electrical transport properties of atomically thin individual crystalline grains of MoS 2 with four-probe scanning tunneling microscopy. The monolayer MoS 2 domains are synthesized by chemical vapor deposition on SiO 2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carriermore » density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS 2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS 2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS 2.« less

Optimum hot electron production with low-density foams for laser fusion by fast ignition.

PubMed

Lei, A L; Tanaka, K A; Kodama, R; Kumar, G R; Nagai, K; Norimatsu, T; Yabuuchi, T; Mima, K

2006-06-30

We propose a foam cone-in-shell target design aiming at optimum hot electron production for the fast ignition. A thin low-density foam is proposed to cover the inner tip of a gold cone inserted in a fuel shell. An intense laser is then focused on the foam to generate hot electrons for the fast ignition. Element experiments demonstrate increased laser energy coupling efficiency into hot electrons without increasing the electron temperature and beam divergence with foam coated targets in comparison with solid targets. This may enhance the laser energy deposition in the compressed fuel plasma.

Surface modification of steels and magnesium alloy by high current pulsed electron beam

NASA Astrophysics Data System (ADS)

Hao, Shengzhi; Gao, Bo; Wu, Aimin; Zou, Jianxin; Qin, Ying; Dong, Chuang; An, Jian; Guan, Qingfeng

2005-11-01

High current pulsed electron beam (HCPEB) is now developing as a useful tool for surface modification of materials. When concentrated electron flux transferring its energy into a very thin surface layer within a short pulse time, superfast processes such as heating, melting, evaporation and consequent solidification, as well as dynamic stress induced may impart the surface layer with improved physico-chemical and mechanical properties. This paper presents our research work on surface modification of steels and magnesium alloy with HCPEB of working parameters as electron energy 27 keV, pulse duration ∼1 μs and energy density ∼2.2 J/cm2 per pulse. Investigations performed on carbon steel T8, mold steel D2 and magnesium alloy AZ91HP have shown that the most pronounced changes of phase-structure state and properties occurring in the near-surface layers, while the thickness of the modified layer with improved microhardness (several hundreds of micrometers) is significantly greater than that of the heat-affected zone. The formation mechanisms of surface cratering and non-stationary hardening effect in depth are discussed based on the elucidation of non-equilibrium temperature filed and different kinds of stresses formed during pulsed electron beam melting treatment. After the pulsed electron beam treatments, samples show significant improvements in measurements of wear and corrosion resistance.

McMillan Lens in a System with Space Charge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobach, I.; Nagaitsev, S.; Stern, E.

Space charge (SC) in a circulating beam in a ring produces both betatron tune shift and betatron tune spread. These effects make some particles move on to a machine resonance and become unstable. Linear elements of beam optics cannot reduce the tune spread induced by SC because of its intrinsic nonlinear nature. We investigate the possibility to mitigate it by a thin McMillan lens providing a nonlinear axially symmetric kick, which is qualitatively opposite to the accumulated kick by SC. Experimentally, the proposed concept can be tested in Fermilab's IOTA ring. A thin McMillan lens can be implemented by amore » short (70 cm) insertion of an electron beam with specifically chosen density distribution in transverse directions. In this article, to see if McMillan lenses reduce the tune spread induced by SC, we make several simulations with particle tracking code Synergia. We choose such beam and lattice parameters that tune spread is roughly 0.5 and a beam instability due to the half-integer resonance 0.5 is observed. Then, we try to reduce emittance growth by shifting betatron tunes by adjusting quadrupoles and reducing the tune spread by McMillan lenses.« less

Kinetics of electron-beam dispersion of fullerite C60

NASA Astrophysics Data System (ADS)

Razanau, Ihar; Mieno, Tetsu; Kazachenko, Victor

2012-06-01

Electron-beam dispersion of pressed fullerite C60 targets in vacuum leads to the deposition of thin films containing polymeric forms of C60. The aim of the present report is to analyze physical-chemical processes in the fullerite target during its electron-beam dispersion through the analysis of the kinetics of the radiation temperature of the target surface, the coating growth rate and the density of negative current on the substrate. It was shown that the induction stage of the process is determined by the negative charging and radiation-induced modification and heating of the target. The transitional stage is characterized by nonstationary sublimation of the target material through the pores in the modified surface layer and release of the accumulated negative charge. Stabilization of the process parameters owing to the convection cooling of the target by the sublimation products and the decrease in the pressure inside the microcavities beneath the pores leads to a quasi-stationary stage of target sublimation and deposition of a coating containing polymeric forms of C60.

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

NASA Astrophysics Data System (ADS)

Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

1999-06-01

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

Electron-beam induced damage in thin insulating films on compound semiconductors. M.S. Thesis, 1988

NASA Technical Reports Server (NTRS)

Pantic, Dragan M.

1989-01-01

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Electron beam induced strong organic/inorganic grafting for thermally stable lithium-ion battery separators

NASA Astrophysics Data System (ADS)

Choi, Yunah; Kim, Jin Il; Moon, Jungjin; Jeong, Jongyeob; Park, Jong Hyeok

2018-06-01

A tailored interface between organic and inorganic materials is of great importance to maximize the synergistic effects from hybridization. Polyethylene separators over-coated with inorganic thin films are the state-of-the art technology for preparing various secondary batteries with high safety. Unfortunately, the organic/inorganic hybrid separators have the drawback of a non-ideal interface, thus causing poor thermal/dimensional stability. Here, we report a straightforward method to resolve the drawback of the non-ideal interface between vapor deposited SiO2 and polyethylene separators, to produce a highly stable lithium-ion battery separator through strong chemical linking generated by direct electron beam irradiation. The simple treatment with an electron beam with an optimized dose generates thermally stable polymer separators, which may enhance battery safety under high-temperature conditions. Additionally, the newly formed Si-O-C or Si-CH3 chemical bonding enhances electrolyte-separator compatibility and thus may provide a better environment for ionic transport between the cathode and anode, thereby leading to better charge/discharge behaviors.

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Microstructure engineering of Pt-Al alloy thin films through Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Harris, R. A.; Terblans, J. J.; Swart, H. C.

2014-06-01

A kinetic algorithm, based on the regular solution model, was used in conjunction with the Monte Carlo method to simulate the evolution of a micro-scaled thin film system during exposure to a high temperature environment. Pt-Al thin films were prepared via electron beam physical vapor deposition (EB-PVD) with an atomic concentration ratio of Pt63:Al37. These films were heat treated at an annealing temperature of 400 °C for 16 and 49 minutes. Scanning Auger Microscopy (SAM) (PHI 700) was used to obtain elemental maps while sputtering through the thin films. Simulations were run for the same annealing temperatures and thin-film composition. From these simulations theoretical depth profiles and simulated microstructures were obtained. These were compared to the experimentally measured depth profiles and elemental maps.

Z-scan studies of the nonlinear optical properties of gold nanoparticles prepared by electron beam deposition.

PubMed

Mezher, M H; Nady, A; Penny, R; Chong, W Y; Zakaria, R

2015-11-20

This paper details the fabrication process for placing single-layer gold (Au) nanoparticles on a planar substrate, and investigation of the resulting optical properties that can be exploited for nonlinear optics applications. Preparation of Au nanoparticles on the substrate involved electron beam deposition and subsequent thermal dewetting. The obtained thin films of Au had a variation in thicknesses related to the controllable deposition time during the electron beam deposition process. These samples were then subjected to thermal annealing at 600°C to produce a randomly distributed layer of Au nanoparticles. Observation from field-effect scanning electron microscope (FESEM) images indicated the size of Au nanoparticles ranges from ∼13 to ∼48  nm. Details of the optical properties related to peak absorption of localized surface plasmon resonance (LSPR) of the nanoparticle were revealed by use of UV-Vis spectroscopy. The Z-scan technique was used to measure the nonlinear effects on the fabricated Au nanoparticle layers where it strongly relates LSPR and nonlinear optical properties.

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

PubMed Central

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-01-01

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications. PMID:26965073

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

DOE PAGES

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; ...

2016-03-11

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combinationmore » of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Ultimately, our results allow for improved safety during laser ablation in manufacturing and medical applications.« less

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

NASA Astrophysics Data System (ADS)

Hihath, Sahar; Santala, Melissa K.; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-03-01

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications.

High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy.

PubMed

Hihath, Sahar; Santala, Melissa K; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

2016-03-11

Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications.

Electron beam surface modifications in reinforcing and recycling of polymers

NASA Astrophysics Data System (ADS)

Czvikovszky, T.; Hargitai, H.

1997-08-01

Thermoplastic polymers can be fiber-reinforced in the recycling step through a reactive modification of the interface between the polymer matrix and fiber. Recollected automobile bumpers made of polypropylene copolymers have been reinforced during the reprocessing with eight different types of high-strength fibers, with waste cord-yarns of the tire industry. A thin layer reactive interface of acrylic oligomers has been applied and activated through low energy (175 keV) electron beam (EB). The upcycling (upgrading recycling) resulted in a series of extrudable and injection-mouldable, fiber-reinforced thermoplastic of enhanced bending strength, increased modulus of elasticity and acceptable impact strength. EB treatment has been compared with conventional methods.

Charge Catastrophe and Dielectric Breakdown During Exposure of Organic Thin Films to Low-Energy Electron Radiation

NASA Astrophysics Data System (ADS)

Thete, A.; Geelen, D.; van der Molen, S. J.; Tromp, R. M.

2017-12-01

The effects of exposure to ionizing radiation are central in many areas of science and technology, including medicine and biology. Absorption of UV and soft-x-ray photons releases photoelectrons, followed by a cascade of lower energy secondary electrons with energies down to 0 eV. While these low energy electrons give rise to most chemical and physical changes, their interactions with soft materials are not well studied or understood. Here, we use a low energy electron microscope to expose thin organic resist films to electrons in the range 0-50 eV, and to analyze the energy distribution of electrons returned to the vacuum. We observe surface charging that depends strongly and nonlinearly on electron energy and electron beam current, abruptly switching sign during exposure. Charging can even be sufficiently severe to induce dielectric breakdown across the film. We provide a simple but comprehensive theoretical description of these phenomena, identifying the presence of a cusp catastrophe to explain the sudden switching phenomena seen in the experiments. Surprisingly, the films undergo changes at all incident electron energies, starting at ˜0 eV .

Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

NASA Astrophysics Data System (ADS)

Chou, W. Y.; Kuo, C. W.; Cheng, H. L.; Mai, Y. S.; Tang, F. C.; Lin, S. T.; Yeh, C. Y.; Horng, J. B.; Chia, C. T.; Liao, C. C.; Shu, D. Y.

2006-06-01

The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.

Simple technique for high-throughput marking of distinguishable micro-areas for microscopy.

PubMed

Henrichs, Leonard F; Chen, L I; Bell, Andrew J

2016-04-01

Today's (nano)-functional materials, usually exhibiting complex physical properties require local investigation with different microscopy techniques covering different physical aspects such as dipolar and magnetic structure. However, often these must be employed on the very same sample position to be able to truly correlate those different information and corresponding properties. This can be very challenging if not impossible especially when samples lack prominent features for orientation. Here, we present a simple but effective method to mark hundreds of approximately 15×15 μm sample areas at one time by using a commercial transmission electron microscopy grid as shadow mask in combination with thin-film deposition. Areas can be easily distinguished when using a reference or finder grid structure as shadow mask. We show that the method is suitable to combine many techniques such as light microscopy, scanning probe microscopy and scanning electron microscopy. Furthermore, we find that best results are achieved when depositing aluminium on a flat sample surface using electron-beam evaporation which ensures good line-of-sight deposition. This inexpensive high-throughput method has several advantageous over other marking techniques such as focused ion-beam processing especially when batch processing or marking of many areas is required. Nevertheless, the technique could be particularly valuable, when used in junction with, for example focused ion-beam sectioning to obtain a thin lamellar of a particular pre-selected area. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling.

PubMed

Czigány, Zs; Neidhardt, J; Brunell, I F; Hultman, L

2003-04-01

The microstructure of CN(x) thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN(x) surfaces. The thickness of the damaged surface layer at 5 degrees grazing incidence was 13 and 10nm at 3 and 0.8keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25keV, was less than 1nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN(x) films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN(x) was observed at 200kV.

A novel approach for preparation and in situ tensile testing of silica glass membranes in the TEM

NASA Astrophysics Data System (ADS)

Mačković, Mirza; Przybilla, Thomas; Dieker, Christel; Herre, Patrick; Romeis, Stefan; Stara, Hana; Schrenker, Nadine; Peukert, Wolfgang; Spiecker, Erdmann

2017-04-01

The mechanical behavior of glasses in the micro- and/or nanometer regime increasingly gains importance in nowadays modern technology. However, suitable small scale preparation and mechanical testing approaches for a reliable assessment of the mechanical properties of glasses still remain a big challenge. In the present work, a novel approach for site-specific preparation and quantitative in situ tensile testing of thin silica glass membranes in the transmission electron microscope is presented. Thereby, advanced focused ion beam techniques are used for the preparation of nanoscale dog bone shaped silica glass specimens suitable for in situ tensile testing. Small amounts of gallium are detected on the surface of the membranes resulting from redeposition effects during the focused ion beam preparation procedure. Possible structural changes of silica glass upon irradiation with electrons and gallium ions are investigated by controlled irradiation experiments, followed by a structural analysis using Raman spectroscopy. While moderate electron beam irradiation does not alter the structure of silica glass, ion beam irradiation results in minor densification of the silica glass membranes. In situ tensile testing of membranes under electron beam irradiation results in distinctive elongations without fracture confirming the phenomenon of superplasticity. In contrast, in situ tensile testing in the absence of the electron beam reveals an elastic/plastic deformation behavior, and finally leads to fracture of the membranes. The Young’s moduli of the glass membranes pulled at beam off conditions in the TEM are comparable with values known for bulk fused silica, while the tensile strength is in the range of values reported for silica glass fibers with comparable dimensions. The impact of electron beam irradiation on the mechanical properties of silica glass membranes is further discussed. The results of the present work open new avenues for dedicated preparation and nanomechanical characterization of silica glasses, and further contribute to a fundamental understanding of the mechanical behavior of such glasses when being scaled down to the nanometer regime.

Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Ghanny, H. A.

2008-04-01

Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

NASA Astrophysics Data System (ADS)

Zhang, Dainan; Liao, Yulong; Jin, Lichuan; Wen, Qi-Ye; Zhong, Zhiyong; Wen, Tianlong; Xiao, John Q.

2017-12-01

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Thin-film-based optical fiber Fabry-Perot interferometer used for humidity sensing.

PubMed

Peng, Jiankun; Qu, Yapeng; Wang, Weijia; Sun, Tengpeng; Yang, Minghong

2018-04-20

A thin-film-based optical fiber Fabry-Perot interferometer that consists of ZrO 2 and SiO 2 porous thin films is designed and fabricated by electron beam physical vapor deposition. Since the SiO 2 porous thin film has the capability of water adsorption, the proposed Fabry-Perot interferometer is appropriate to detect humidity. Experimental results show that the prepared sensor has a humidity detection range from 0.06% RH to 70% RH. A cycling test shows that the humidity sensor has a responding or recover time of 4 s and good repeatability among different humidity environments. Especially, the proposed humidity sensor is insensitive to temperature variation and suitable for the detection of low relative humidity.

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE PAGES

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.; ...

2016-06-06

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Pronounced pre-martensitic anomaly in the magnetization on Ni2MnGa thin films

NASA Astrophysics Data System (ADS)

Neckel, I. T.; Müller, C.; Nobrega, K. Z.; Dartora, C. A.; Schreiner, W. H.; Mosca, D. H.

2018-05-01

We have prepared [110]-textured Ni2MnGa thin films exhibiting an unusual pre-martensitic transition accompanied by an extremely large magnetization change. The thin films were grown by molecular beam epitaxy directly on epi-ready GaAs(111)B. Crystalline structure was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the film exhibits cubic crystalline structure (L2 1) at room temperature with lattice parameter a = 5.88 Å which undergoes martensitic transition. Magnetic characterization shows ferromagnetic behavior at room temperature with Curie temperature higher than room temperature. Martensitic transformation occurs at TM ∼ 185 K. A phenomenological model based on Landau theory of phase transformation was developed to explain the anomalous pre-martensitic transition at ∼285 K.

Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moseley, John; Al-Jassim, Mowafak M.; Burst, James

2016-11-21

We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantlymore » in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.« less

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Superconductivity in ion-beam-mixed layered Au-Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.; McLean, W.L.; Stoffel, N.G.

The superconducting properties of thin films made by mixing alternating layers of Au and Si using ion-beam bombardment correlate with the formation of metastable metallic phases in what is otherwise a simple eutectic system. Transmission-electron-microscopy measurements reveal the superconducting phases to be amorphous. Compound formation and the nature of Au-Si bonding in these metastable phases are demonstrated from x-ray photoelectron spectroscopy and from a previous study of x-ray-absorption spectroscopy. After mixing with a beam of Xe ions, multilayered films with an average nominal composition Au{sub {ital x}}Si{sub 1{minus}{ital x}}, where {ital x}=0.2, 0.4, 0.5, 0.72, and 0.8, exhibited superconducting transitionmore » temperatures in the range 0.2--1.2 K. A double transition feature in the magnetic field dependence of the resistivity is attributed to the formation of more than one metastable metallic phase in the same sample as the ion dose increases.« less

Runaway electron generation as possible trigger for enhancement of magnetohydrodynamic plasma activity and fast changes in runaway beam behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pankratov, I. M., E-mail: pankratov@kipt.kharkov.ua, E-mail: rjzhou@ipp.ac.cn; Zhou, R. J., E-mail: pankratov@kipt.kharkov.ua, E-mail: rjzhou@ipp.ac.cn; Hu, L. Q.

2015-07-15

Peculiar phenomena were observed during experiments with runaway electrons: rapid changes in the synchrotron spot and its intensity that coincided with stepwise increases in the electron cyclotron emission (ECE) signal (cyclotron radiation of suprathermal electrons). These phenomena were initially observed in TEXTOR (Tokamak Experiment for Technology Oriented Research), where these events only occurred in the current decay phase or in discharges with thin stable runaway beams at a q = 1 drift surface. These rapid changes in the synchrotron spot were interpreted by the TEXTOR team as a fast pitch angle scattering event. Recently, similar rapid changes in the synchrotron spot andmore » its intensity that coincided with stepwise increases in the non-thermal ECE signal were observed in the EAST (Experimental Advanced Superconducting Tokamak) runaway discharge. Runaway electrons were located around the q = 2 rational magnetic surface (ring-like runaway electron beam). During the EAST runaway discharge, stepwise ECE signal increases coincided with enhanced magnetohydrodynamic (MHD) activity. This behavior was peculiar to this shot. In this paper, we show that these non-thermal ECE step-like jumps were related to the abrupt growth of suprathermal electrons induced by bursting electric fields at reconnection events during this MHD plasma activity. Enhancement of the secondary runaway electron generation also occurred simultaneously. Local changes in the current-density gradient appeared because of local enhancement of the runaway electron generation process. These current-density gradient changes are considered to be a possible trigger for enhancement of the MHD plasma activity and the rapid changes in runaway beam behavior.« less

Runaway electron generation as possible trigger for enhancement of magnetohydrodynamic plasma activity and fast changes in runaway beam behavior

NASA Astrophysics Data System (ADS)

Pankratov, I. M.; Zhou, R. J.; Hu, L. Q.

2015-07-01

Peculiar phenomena were observed during experiments with runaway electrons: rapid changes in the synchrotron spot and its intensity that coincided with stepwise increases in the electron cyclotron emission (ECE) signal (cyclotron radiation of suprathermal electrons). These phenomena were initially observed in TEXTOR (Tokamak Experiment for Technology Oriented Research), where these events only occurred in the current decay phase or in discharges with thin stable runaway beams at a q = 1 drift surface. These rapid changes in the synchrotron spot were interpreted by the TEXTOR team as a fast pitch angle scattering event. Recently, similar rapid changes in the synchrotron spot and its intensity that coincided with stepwise increases in the non-thermal ECE signal were observed in the EAST (Experimental Advanced Superconducting Tokamak) runaway discharge. Runaway electrons were located around the q = 2 rational magnetic surface (ring-like runaway electron beam). During the EAST runaway discharge, stepwise ECE signal increases coincided with enhanced magnetohydrodynamic (MHD) activity. This behavior was peculiar to this shot. In this paper, we show that these non-thermal ECE step-like jumps were related to the abrupt growth of suprathermal electrons induced by bursting electric fields at reconnection events during this MHD plasma activity. Enhancement of the secondary runaway electron generation also occurred simultaneously. Local changes in the current-density gradient appeared because of local enhancement of the runaway electron generation process. These current-density gradient changes are considered to be a possible trigger for enhancement of the MHD plasma activity and the rapid changes in runaway beam behavior.

Initial formation of calcite crystals in the thin prismatic layer with the periostracum of Pinctada fucata.

PubMed

Suzuki, Michio; Nakayama, Seiji; Nagasawa, Hiromichi; Kogure, Toshihiro

2013-02-01

Although the formation mechanism of calcite crystals in the prismatic layer has been studied well in many previous works, the initial state of calcite formation has not been observed in detail using electron microscopes. In this study, we report that the soft prismatic layer with transparent color (the thin prismatic layer) in the tip of the fresh shell of Pinctada fucata was picked up to observe the early calcification phase. A scanning electron microscope (SEM) image showed that the growth tip of the thin prismatic layer was covered by the periostracum, which was also where the initial formation of calcite crystals began. A cross-section containing the thin calcite crystals in the thin prismatic layer with the periostracum was made using a focused ion beam (FIB) system. In a transmission electron microscope (TEM) observation, the thin calcite crystal (thickness is about 1μm) on the periostracum was found to be a single crystal with the c-axis oriented perpendicular to the shell surface. On the other hand, many aggregated small particles consisting of bassanite crystals were observed in the periostracum suggesting the possibility that not only organic sulfate but also inorganic sulfates exist in the prismatic layer. These discoveries in the early calcification phase of the thin prismatic layer may help to clarify the mechanism of regulating the nucleation and orientation of the calcite crystal in the shell. Copyright © 2012 Elsevier Ltd. All rights reserved.

Miniature modified Faraday cup for micro electron beams

DOEpatents

Teruya, Alan T.; Elmer, John W.; Palmer, Todd A.; Walton, Chris C.

2008-05-27

A micro beam Faraday cup assembly includes a refractory metal layer with an odd number of thin, radially positioned traces in this refractory metal layer. Some of the radially positioned traces are located at the edge of the micro modified Faraday cup body and some of the radially positioned traces are located in the central portion of the micro modified Faraday cup body. Each set of traces is connected to a separate data acquisition channel to form multiple independent diagnostic networks. The data obtained from the two diagnostic networks are combined and inputted into a computed tomography algorithm to reconstruct the beam shape, size, and power density distribution.

Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain

NASA Technical Reports Server (NTRS)

Stroud, Rhonda M.; OGrady, Megan; Nittler, Larry R.; Alexander, Conel M. OD.

2002-01-01

We used a focused ion beam workstation to prepare ultra-thin sections of a presolar SiC grain. Our TEM studies indicate that the SiC formed by rapid vapor-phase condensation, trapping pre-existing graphite grains in random orientations. Additional information is contained in the original extended abstract.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

NASA Astrophysics Data System (ADS)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Formation of Ti-Ta-based surface alloy on TiNi SMA substrate from thin films by pulsed electron-beam melting

NASA Astrophysics Data System (ADS)

Meisner, L. L.; Markov, A. B.; Ozur, G. E.; Rotshtein, V. P.; Yakovlev, E. V.; Meisner, S. N.; Poletika, T. M.; Girsova, S. L.; Semin, V. O.; Mironov, Yu P.

2017-05-01

TiNi shape memory alloys (SMAs) are unique metallic biomaterials due to combination of superelastisity and high corrosion resistance. Important factors limiting biomedical applications of TiNi SMAs are a danger of toxic Ni release into the adjacent tissues, as well as insufficient level of X-ray visibility. In this paper, the method for fabrication of protective Ni-free surface alloy of thickness ∼1 μm of near Ti70Ta30 composition on TiNi SMA substrate has been successfully realized. The method is based on multiple alternation of magnetron co-deposition of Ti70Ta30 thin (50 nm) films and their liquid-phase mixing with the TiNi substrate by microsecond low-energy, high current electron beam (≤15 keV, ∼2 J/cm2) using setup RITM-SP (Microsplav, Russia). It was found by AES, XRD, SEM/EDS and HRTEM/EDS examinations, that Ti-Ta surface alloy has an increased X-ray visibility and gradient multiphase amorphous-nanocrystalline structure containing nanopores.

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

2016-08-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Design of a fast multileaf collimator for radiobiological optimized IMRT with scanned beams of photons, electrons, and light ions.

PubMed

Svensson, Roger; Larsson, Susanne; Gudowska, Irena; Holmberg, Rickard; Brahme, Anders

2007-03-01

Intensity modulated radiation therapy is rapidly becoming the treatment of choice for most tumors with respect to minimizing damage to the normal tissues and maximizing tumor control. Today, intensity modulated beams are most commonly delivered using segmental multileaf collimation, although an increasing number of radiation therapy departments are employing dynamic multileaf collimation. The irradiation time using dynamic multileaf collimation depends strongly on the nature of the desired dose distribution, and it is difficult to reduce this time to less than the sum of the irradiation times for all individual peak heights using dynamic leaf collimation [Svensson et al., Phys. Med. Biol. 39, 37-61 (1994)]. Therefore, the intensity modulation will considerably increase the total treatment time. A more cost-effective procedure for rapid intensity modulation is using narrow scanned photon, electron, and light ion beams in combination with fast multileaf collimator penumbra trimming. With this approach, the irradiation time is largely independent of the complexity of the desired intensity distribution and, in the case of photon beams, may even be shorter than with uniform beams. The intensity modulation is achieved primarily by scanning of a narrow elementary photon pencil beam generated by directing a narrow well focused high energy electron beam onto a thin bremsstrahlung target. In the present study, the design of a fast low-weight multileaf collimator that is capable of further sharpening the penumbra at the edge of the elementary scanned beam has been simulated, in order to minimize the dose or radiation response of healthy tissues. In the case of photon beams, such a multileaf collimator can be placed relatively close to the bremsstrahlung target to minimize its size. It can also be flat and thin, i.e., only 15-25 mm thick in the direction of the beam with edges made of tungsten or preferably osmium to optimize the sharpening of the penumbra. The low height of the collimator will minimize edge scatter from glancing incidence. The major portions of the collimator leafs can then be made of steel or even aluminum, so that the total weight of the multileaf collimator will be as low as 10 kg, which may even allow high-speed collimation in real time in synchrony with organ movements. To demonstrate the efficiency of this collimator design in combination with pencil beam scanning, optimal radiobiological treatments of an advanced cervix cancer were simulated. Different geometrical collimator designs were tested for bremsstrahlung, electron, and light ion beams. With a 10 mm half-width elementary scanned photon beam and a steel collimator with tungsten edges, it was possible to make as effective treatments as obtained with intensity modulated beams of full resolution, i.e., here 5 mm resolution in the fluence map. In combination with narrow pencil beam scanning, such a collimator may provide ideal delivery of photons, electrons, or light ions for radiation therapy synchronized to breathing and other organ motions. These high-energy photon and light ion beams may allow three-dimensional in vivo verification of delivery and thereby clinical implementation of the BioArt approach using Biologically Optimized three-dimensional in vivo predictive Assay based adaptive Radiation Therapy [Brahme, Acta Oncol. 42, 123-126 (2003)].

Influence of defects on the absorption edge of InN thin films: The band gap value

NASA Astrophysics Data System (ADS)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

[Radiation load on the skin using a silicone-coated polyamide wound dressing during photon and electron radiotherapy].

PubMed

Thilmann, C; Adamietz, I A; Ramm, U; Mose, S; Saran, F; Böttcher, H D

1996-05-01

Silicone-coated polyamide wound dressing is frequently used for the supportive treatment in patients with radiation induced skin lesions. The use of this kind of dressing during radiotherapy with high energy beams shifts the dose built-up effect towards the skin surface. Thus the dose delivered to the skin increases. The present work quantifies changes of the skin dose by a commercial silicon-coated polyamide wound dressing. The dependence on the beam quality and on different treatment techniques is investigated. Measurements were performed with photon (60Co, 6 MV, 42 MV) and electron (7 MeV, 20 MeV, 40 MeV) beams using thin LiF thermoluminescence dosimeters (TLD) in a perspex phantom. The beams were directed perpendicularly to the phantom surface. For 60Co and 6 MV photon beams the skin dose was evaluated in vivo at different beam arrangements and at a given reference dose. For 60Co, 6 MV and 42 MV photon beams wound dressing caused a dose increase on the surface of the perspex phantom by a factor of 1.65, 1.39 and 1.33 respectively. Using oblique or rotational techniques for 60Co and 6 MV photon irradiation the wound dressing increased the skin dose but less compared to perpendicular beam direction. For electron beams the skin dose is relatively high (from 84% to 92%) and an increase by a dressing has no clinical relevance (factor 1.03 to 1.05). The silicone-coated polyamide wound dressing causes no relevant skin dose increase during radiation treatment with electron beams and can be left on the skin during irradiation. During radiation treatment with photon beams like 60Co and 6 MV the protective procedure should be adapted to skin changes, in case of strong skin reactions a removal during the time of irradiation should be considered.

Precise and economic FIB/SEM for CLEM: with 2 nm voxels through mitosis.

PubMed

Luckner, Manja; Wanner, Gerhard

2018-05-23

A portfolio is presented documenting economic, high-resolution correlative focused ion beam scanning electron microscopy (FIB/SEM) in routine, comprising: (i) the use of custom-labeled slides and coverslips, (ii) embedding of cells in thin, or ultra-thin resin layers for correlative light and electron microscopy (CLEM) and (iii) the claim to reach the highest resolution possible with FIB/SEM in xyz. Regions of interest (ROIs) defined in light microscope (LM), can be relocated quickly and precisely in SEM. As proof of principle, HeLa cells were investigated in 3D context at all stages of the cell cycle, documenting ultrastructural changes during mitosis: nuclear envelope breakdown and reassembly, Golgi degradation and reconstitution and the formation of the midzone and midbody.

Accelerator-based neutron source for boron neutron capture therapy (BNCT) and method

DOEpatents

Yoon, W.Y.; Jones, J.L.; Nigg, D.W.; Harker, Y.D.

1999-05-11

A source for boron neutron capture therapy (BNCT) comprises a body of photoneutron emitter that includes heavy water and is closely surrounded in heat-imparting relationship by target material; one or more electron linear accelerators for supplying electron radiation having energy of substantially 2 to 10 MeV and for impinging such radiation on the target material, whereby photoneutrons are produced and heat is absorbed from the target material by the body of photoneutron emitter. The heavy water is circulated through a cooling arrangement to remove heat. A tank, desirably cylindrical or spherical, contains the heavy water, and a desired number of the electron accelerators circumferentially surround the tank and the target material as preferably made up of thin plates of metallic tungsten. Neutrons generated within the tank are passed through a surrounding region containing neutron filtering and moderating materials and through neutron delimiting structure to produce a beam or beams of epithermal neutrons normally having a minimum flux intensity level of 1.0{times}10{sup 9} neutrons per square centimeter per second. Such beam or beams of epithermal neutrons are passed through gamma ray attenuating material to provide the required epithermal neutrons for BNCT use. 3 figs.

Accelerator-based neutron source for boron neutron capture therapy (BNCT) and method

DOEpatents

Yoon, Woo Y.; Jones, James L.; Nigg, David W.; Harker, Yale D.

1999-01-01

A source for boron neutron capture therapy (BNCT) comprises a body of photoneutron emitter that includes heavy water and is closely surrounded in heat-imparting relationship by target material; one or more electron linear accelerators for supplying electron radiation having energy of substantially 2 to 10 MeV and for impinging such radiation on the target material, whereby photoneutrons are produced and heat is absorbed from the target material by the body of photoneutron emitter. The heavy water is circulated through a cooling arrangement to remove heat. A tank, desirably cylindrical or spherical, contains the heavy water, and a desired number of the electron accelerators circumferentially surround the tank and the target material as preferably made up of thin plates of metallic tungsten. Neutrons generated within the tank are passed through a surrounding region containing neutron filtering and moderating materials and through neutron delimiting structure to produce a beam or beams of epithermal neutrons normally having a minimum flux intensity level of 1.0.times.10.sup.9 neutrons per square centimeter per second. Such beam or beams of epithermal neutrons are passed through gamma ray attenuating material to provide the required epithermal neutrons for BNCT use.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

NASA Astrophysics Data System (ADS)

de Filippo, E.; Lanzanó, G.; Amorini, F.; Cardella, G.; Geraci, E.; Grassi, L.; La Guidara, E.; Lombardo, I.; Politi, G.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-12-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Effective vortex pinning in MgB2 thin films

NASA Astrophysics Data System (ADS)

Bugoslavsky, Y.; Cowey, L.; Tate, T. J.; Perkins, G. K.; Moore, J.; Lockman, Z.; Berenov, A.; MacManus-Driscoll, J. L.; Caplin, A. D.; Cohen, L. F.; Zhai, H. Y.; Christen, H. M.; Paranthaman, M. P.; Lowndes, D. H.; Jo, M. H.; Blamire, M. G.

2002-10-01

We discuss the pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with a small grain size providing enhanced pinning at grain boundaries without any degradation of Tc. The PLD process produces films with structural disorder on a scale less than the coherence length that further improves pinning, but also depresses Tc.

Innovative remotely-controlled bending device for thin silicon and germanium crystals

NASA Astrophysics Data System (ADS)

De Salvador, D.; Carturan, S.; Mazzolari, A.; Bagli, E.; Bandiera, L.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Romagnoni, M.; Sytov, A.

2018-04-01

Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).

Density gradient free electron collisionally excited x-ray laser

DOEpatents

Campbell, E.M.; Rosen, M.D.

1984-11-29

An operational x-ray laser is provided that amplifies 3p-3s transition x-ray radiation along an approximately linear path. The x-ray laser is driven by a high power optical laser. The driving line focused optical laser beam illuminates a free-standing thin foil that may be associated with a substrate for improved structural integrity. This illumination produces a generally cylindrically shaped plasma having an essentially uniform electron density and temperature, that exists over a long period of time, and provides the x-ray laser gain medium. The x-ray laser may be driven by more than one optical laser beam. The x-ray laser has been successfully demonstrated to function in a series of experimental tests.

Fabrication of ion bombardment induced rippled TiO₂ surfaces to influence subsequent organic thin film growth.

PubMed

Kratzer, Markus; Szajna, Konrad; Wrana, Domink; Belza, Wojciech; Krok, Franciszek; Teichert, Christian

2018-05-23

Control over organic thin film growth is a central issue in the development of organic electronics. The anisotropy and extended size of the molecular building blocks introduce a high degree of complexity within the formation of thin films. This complexity can be even increased for substrates with induced, sophisticated morphology and anisotropy. Thus, targeted structuring like ion beam mediated modification of substrates in order to create ripples, pyramids, or pit structures provides a further degree of freedom in manipulating the growth morphology of organic thin films. We provide a comprehensive review of recent work on para-hexaphenyl (C36H26, 6P) as a typical representative of the class of small, rod-like conjugated molecules and rutile TiO2(110) as an example for a transparent oxide electrode to demonstrate the effect of ion beam induced nanostructuring on organic thin film growth. Starting from molecular growth on smooth, atomically flat TiO2(110) (11) surfaces, we investigate the influence of the ripple size on the resulting 6P thin films. The achieved 6P morphologies are either crystalline nano-needles composed of flat lying molecules or islands consisting of upright standing 6P, which are elongated in ripple direction. The islands' length to width ratio can be controlled by tuning of the ripples' shape. © 2018 IOP Publishing Ltd.

Study on structural recovery of graphite irradiated with swift heavy ions at high temperature

NASA Astrophysics Data System (ADS)

Pellemoine, F.; Avilov, M.; Bender, M.; Ewing, R. C.; Fernandes, S.; Lang, M.; Li, W. X.; Mittig, W.; Schein, M.; Severin, D.; Tomut, M.; Trautmann, C.; Zhang, F. X.

2015-12-01

Thin graphite foils bombarded with an intense high-energy (8.6 MeV/u) gold beam reaching fluences up to 1 × 1015 ions/cm2 lead to swelling and electrical resistivity changes. As shown earlier, these effects are diminished with increasing irradiation temperature. The work reported here extends the investigation of beam induced changes of these samples by structural analysis using synchrotron X-ray diffraction and transmission electron microscope. A nearly complete recovery from swelling at irradiation temperatures above about 1500 °C is identified.

Focused Ion Beam Microscopy of ALH84001 Carbonate Disks

NASA Technical Reports Server (NTRS)

Thomas-Keprta, Kathie L.; Clemett, Simon J.; Bazylinski, Dennis A.; Kirschvink, Joseph L.; McKay, David S.; Vali, Hojatollah; Gibson, Everett K., Jr.; Romanek, Christopher S.

2005-01-01

Our aim is to understand the mechanism(s) of formation of carbonate assemblages in ALH84001. A prerequisite is that a detailed characterization of the chemical and physical properties of the carbonate be established. We present here analyses by transmission electron microscopy (TEM) of carbonate thin sections produced by both focused ion beam (FIB) sectioning and ultramicrotomy. Our results suggest that the formation of ALH84001 carbonate assemblages were produced by considerably more complex process(es) than simple aqueous precipitation followed by partial thermal decomposition as proposed by other investigators [e.g., 1-3].

Phase inversion and frequency doubling of reflection high-energy electron diffraction intensity oscillations in the layer-by-layer growth of complex oxides

NASA Astrophysics Data System (ADS)

Mao, Zhangwen; Guo, Wei; Ji, Dianxiang; Zhang, Tianwei; Gu, Chenyi; Tang, Chao; Gu, Zhengbin; Nie*, Yuefeng; Pan, Xiaoqing

In situ reflection high-energy electron diffraction (RHEED) and its intensity oscillations are extremely important for the growth of epitaxial thin films with atomic precision. The RHEED intensity oscillations of complex oxides are, however, rather complicated and a general model is still lacking. Here, we report the unusual phase inversion and frequency doubling of RHEED intensity oscillations observed in the layer-by-layer growth of SrTiO3 using oxide molecular beam epitaxy. In contacts to the common understanding that the maximum(minimum) intensity occurs at SrO(TiO2) termination, respectively, we found that both maximum or minimum intensities can occur at SrO, TiO2, or even incomplete terminations depending on the incident angle of the electron beam, which raises a fundamental question if one can rely on the RHEED intensity oscillations to precisely control the growth of thin films. A general model including surface roughness and termination dependent mean inner potential qualitatively explains the observed phenomena, and provides the answer to the question how to prepare atomically and chemically precise surface/interfaces using RHEED oscillations for complex oxides. We thank National Basic Research Program of China (No. 11574135, 2015CB654901) and the National Thousand-Young-Talents Program.

Study of electronic sputtering of CaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

2014-01-01

In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

Automated thin-film analyses of anhydrous interplanetary dust particles in the analytical electron microscope

NASA Technical Reports Server (NTRS)

Bradley, J. P.; Germani, M. S.; Brownlee, D. E.

1989-01-01

An AEM apparatus equipped with digital beam control has obtained quantitative point-count analyses of thin sections taken from eight anhydrous chondritic interplanetary dust particles (IDPs); between 200 and 500 X-ray analyses were collected from each thin section and analyzed for Mg, Al, Si, S, Ca, Cr, Mn, Fe, and Ni. Two types of anhydrous chondritic aggregates were observed in the eight IDPs: one highly porous, the other less so. The eight anhydrous IDPs are characterizable as mixtures of fine- and coarse-grained aggregates, large mineral grains, glass, and carbonaceous materials. Their elemental concentrations follow those of solar abundances, suggesting that they are unperturbed by aqueous alteration.

Very low-refractive-index optical thin films consisting of an array of SiO2 nanorods

NASA Astrophysics Data System (ADS)

Xi, J.-Q.; Kim, Jong Kyu; Schubert, E. F.; Ye, Dexian; Lu, T.-M.; Lin, Shawn-Yu; Juneja, Jasbir S.

2006-03-01

The refractive-index contrast in dielectric multilayer structures, optical resonators, and photonic crystals is an important figure of merit that creates a strong demand for high-quality thin films with a low refractive index. A SiO2 nanorod layer with low refractive index of n=1.08, to our knowledge the lowest ever reported in thin-film materials, is grown by oblique-angle electron-beam deposition of SiO2. A single-pair distributed Bragg reflector employing a SiO2 nanorod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-refractive-index films for applications in photonic structures and devices.

Surface diffusion in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Woo, Chang-Su; Chu, Kanghyun; Song, Jong-Hyun; Yang, Chan-Ho; Charm Lab Team; Nano Spintronics Lab Collaboration

The development of growth techniques such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) has facilitated growths of complex oxide thin films at the atomic level .... Systematic studies on surface diffusion process of adatoms using theoretical and experimental methods allow us to understand growth mechanism enabling atomically flat thin film surface. In this presentation, we introduce the synthesis of homoepitaxial SrTiO3 thin films using a PLD equipped with reflection of high energy electron diffraction (RHEED). We determine the surface diffusion time as a function of growth temperature and extract the activation energy of diffusion on the surface by in-situ monitoring the RHEED intensity recovery during the film deposition. From the extracted experimental results, we discuss the microscopic mechanism of the diffusion process

Chemical Reactions of Molecules Promoted and Simultaneously Imaged by the Electron Beam in Transmission Electron Microscopy.

PubMed

Skowron, Stephen T; Chamberlain, Thomas W; Biskupek, Johannes; Kaiser, Ute; Besley, Elena; Khlobystov, Andrei N

2017-08-15

The main objective of this Account is to assess the challenges of transmission electron microscopy (TEM) of molecules, based on over 15 years of our work in this field, and to outline the opportunities in studying chemical reactions under the electron beam (e-beam). During TEM imaging of an individual molecule adsorbed on an atomically thin substrate, such as graphene or a carbon nanotube, the e-beam transfers kinetic energy to atoms of the molecule, displacing them from equilibrium positions. Impact of the e-beam triggers bond dissociation and various chemical reactions which can be imaged concurrently with their activation by the e-beam and can be presented as stop-frame movies. This experimental approach, which we term ChemTEM, harnesses energy transferred from the e-beam to the molecule via direct interactions with the atomic nuclei, enabling accurate predictions of bond dissociation events and control of the type and rate of chemical reactions. Elemental composition and structure of the reactant molecules as well as the operating conditions of TEM (particularly the energy of the e-beam) determine the product formed in ChemTEM processes, while the e-beam dose rate controls the reaction rate. Because the e-beam of TEM acts simultaneously as a source of energy for the reaction and as an imaging tool monitoring the same reaction, ChemTEM reveals atomic-level chemical information, such as pathways of reactions imaged for individual molecules, step-by-step and in real time; structures of illusive reaction intermediates; and direct comparison of catalytic activity of different transition metals filmed with atomic resolution. Chemical transformations in ChemTEM often lead to previously unforeseen products, demonstrating the potential of this method to become not only an analytical tool for studying reactions, but also a powerful instrument for discovery of materials that can be synthesized on preparative scale.

Carbon contamination in scanning transmission electron microscopy and its impact on phase-plate applications.

PubMed

Hettler, Simon; Dries, Manuel; Hermann, Peter; Obermair, Martin; Gerthsen, Dagmar; Malac, Marek

2017-05-01

We analyze electron-beam induced carbon contamination in a transmission electron microscope. The study is performed on thin films potentially suitable as phase plates for phase-contrast transmission electron microscopy. Electron energy-loss spectroscopy and phase-plate imaging is utilized to analyze the contamination. The deposited contamination layer is identified as a graphitic carbon layer which is not prone to electrostatic charging whereas a non-conductive underlying substrate charges. Several methods that inhibit contamination are evaluated and the impact of carbon contamination on phase-plate imaging is discussed. The findings are in general interesting for scanning transmission electron microscopy applications. Crown Copyright © 2017. Published by Elsevier Ltd. All rights reserved.

Measurements of output factors with different detector types and Monte Carlo calculations of stopping-power ratios for degraded electron beams.

PubMed

Björk, Peter; Knöös, Tommy; Nilsson, Per

2004-10-07

The aim of the present study was to investigate three different detector types (a parallel-plate ionization chamber, a p-type silicon diode and a diamond detector) with regard to output factor measurements in degraded electron beams, such as those encountered in small-electron-field radiotherapy and intraoperative radiation therapy (IORT). The Monte Carlo method was used to calculate mass collision stopping-power ratios between water and the different detector materials for these complex electron beams (nominal energies of 6, 12 and 20 MeV). The diamond detector was shown to exhibit excellent properties for output factor measurements in degraded beams and was therefore used as a reference. The diode detector was found to be well suited for practical measurements of output factors, although the water-to-silicon stopping-power ratio was shown to vary slightly with treatment set-up and irradiation depth (especially for lower electron energies). Application of ionization-chamber-based dosimetry, according to international dosimetry protocols, will introduce uncertainties smaller than 0.3% into the output factor determination for conventional IORT beams if the variation of the water-to-air stopping-power ratio is not taken into account. The IORT system at our department includes a 0.3 cm thin plastic scatterer inside the therapeutic beam, which furthermore increases the energy degradation of the electrons. By ignoring the change in the water-to-air stopping-power ratio due to this scatterer, the output factor could be underestimated by up to 1.3%. This was verified by the measurements. In small-electron-beam dosimetry, the water-to-air stopping-power ratio variation with field size could mostly be ignored. For fields with flat lateral dose profiles (>3 x 3 cm2), output factors determined with the ionization chamber were found to be in close agreement with the results of the diamond detector. For smaller field sizes the lateral extension of the ionization chamber hampers its use. We therefore recommend that the readily available silicon diode detector should be used for output factor measurements in complex electron fields.

In situ sputter cleaning of thin film metal substrates for UHV-TEM corrosion studies.

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1973-01-01

A prerequisite for conducting valid corrosion experiments by in situ electron microscopy techniques is not only the achievement of UHV background pressure conditions at the site of the specimen but also the ability to clean the surface of the thin metal substrate specimen before initiation of the corrosive interaction. A miniaturized simple ion gun has been constructed for this purpose. The gun is small enough to be incorporated into an UHV electron microscope specimen chamber with hot stage in such a way as to permit bombardment of the substrate specimen while observing it by transmission electron microscopy TEM. It is shown that the ion beam generated is confined well enough to cause a sputtering removal of substrate material at a rate of approximately 5-10 A/min and to prevent the sputter deposition of contaminating material from the specimen holder.

The stonehenge technique: a new method of crystal alignment for coherent bremsstrahlung experiments

NASA Astrophysics Data System (ADS)

Livingston, Kenneth

2005-08-01

In the coherent bremsstrahlung technique a thin diamond crystal oriented correctly in an electron beam can produce photons with a high degree of linear polarization.1 The crystal is mounted on a goniometer to control its orientation and it is necessary to measure the angular offsets a) between the crystal axes and the goniometer axes and b) between the goniometer and the electron beam axis. A method for measuring these offsets and aligning the crystal was developed by Lohman et al, and has been used successfully in Mainz.2 However, recent attempts to investigate new crystals have shown that this approach has limitations which become more serious at higher beam energies where more accurate setting of the crystal angles, which scale with l/Ebeam, is required. (Eg. the recent installation of coherent bremsstrahlung facility at Jlab, with Ebeam = 6 GeV ) This paper describes a new, more general alignment technique, which overcomes these limitations. The technique is based on scans where the horizontal and vertical rotation axes of the goniometer are adjusted in a series of steps to make the normal to the crystal describe a cone of a given angle. For each step in the scan, the photon energy spectrum is measured using a tagging spectrometer, and the offsets between the electron beam and the crystal lattice are inferred from the resulting 2D plot. Using this method, it is possible to align the crystal with the beam quickly, and hence to set any desired orientation of the crystal relative to the beam. This is essential for any experiment requiring linearly polarized photons produced via coherent bremsstrahlung, and is also required for a systematic study of the channeling radiation produced by the electron beam incident on the crystal.

MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

NASA Astrophysics Data System (ADS)

Park, Yeonjoon

The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

DOE PAGES

Martin, Aiden A.; Depond, Philip J.

2018-04-24

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Aiden A.; Depond, Philip J.

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

Construction of the Helsinki University of Technology (HUT) pulsed positron beam

NASA Astrophysics Data System (ADS)

Fallström, K.; Laine, T.

1999-08-01

We are constructing a pulsed positron beam facility for lifetime measurements in thin surface layers. Our beam system comprises a 22Na positron source and a tungsten foil moderator followed by a prebuncher and a chopper. A double-drift buncher will compress the beam into 120-ps pulses at the target. The end energy of the positron beam can be adjusted between 3 keV and 30 keV by changing the potential of the source end of the beam. The bunching electronics and most of the beam guiding magnets are also floating at the high voltage. The sample is at ground potential to facilitate variable temperature measurements. With a test source of 6 mCi 22Na we get a prebunched beam intensity of 4×10 3 positrons per second in 1.5-ns wide pulses (the bunching frequency is 33.33 MHz). We are currently testing the chopper and the following buncher stages and building the final accelerator/decelerator system.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Biological Response of Cancer and Normal Cells on Irradiation from Electrons with Energies up to 200 keV.

NASA Astrophysics Data System (ADS)

Prilepskiy, Yuriy

2007-03-01

This paper presents continuation data of the series of experiments with the electron gun of the CEBAF machine at Jefferson Lab (Newport News, VA), which is capable of delivering electrons with energies up to 200 keV. This 1.5 GHz beam permits to generate cellular damage within minutes. We have performed irradiation of cancer and normal cells with different electron energies and currents to investigate cell biological responses. The biological response is measured through proteomics analysis before and after irradiation. The living cells are encased in special air containers allowing proper positioning in vacuum where the electrons are present. The containers receive the irradiation from the mono energetic electrons with energy up to 120 keV, resulting in an irradiation from both electrons and a small number of photons from the original beam passing through the thin container window. This window allows approximately half of the beam to come through. The study will permit to address the physical processes involved in the RBE and LET at a level that supersedes current data listed in the literature. We will discuss the experimental setup and the second stage of data collected with the new more developed system. This research is part of a global program to provide detailed information for the understanding of radiation based cancer treatments.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Influence of Ytterbia Content on Residual Stress and Microstructure of Y2O3-ZrO2 Thin Films Prepared by EB-PVD*

NASA Astrophysics Data System (ADS)

Xiao, Qi-Ling; Shao, Sriu-Ying; He, Hong-Bo; Shao, Jian-Da; Fan, Zheng-Xiu

2008-09-01

Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques: the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress incre ases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

NASA Astrophysics Data System (ADS)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Morphology and crystallinity of ZnS nanocolumns prepared by glancing angle deposition.

PubMed

Lu, Lifang; Zhang, Fujun; Xu, Zheng; Zhao, Suling; Wang, Yongsheng

2010-03-01

ZnS films with different morphologies and nanometer structures were fabricated via high vacuum electron beam deposition by changing the oblique angle alpha between the incoming particle flux and the substrate normal. The morphology and crystallinity of ZnS nanocrystalline films prepared on the substrates at alpha = 0 degrees and 80 degrees were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction. These experimental results show that the ZnS nanocolumn structure was formed at the situation of alpha = 80 degrees. The incidence angle also strongly influenced the crystallinity of thin films. The most intensive diffraction peaks changed from (220) to (111) when the incidence angle was set to 0 degrees and 80 degrees. The dynamic growth process of ZnS films at alpha = 0 degrees and 80 degrees has been analyzed by shadow effect and atomic surface diffusion. The transmittance spectra of the ZnS thin films prepared at different oblique angles were measured, and the transmissivity of ZnS nanocolumn thin films was enhanced compared with ZnS thin films prepared by normal deposition in the visible light range.

Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures

NASA Astrophysics Data System (ADS)

Tuyaerts, Romain; Poncelet, Olivier; Raskin, Jean-Pierre; Proost, Joris

2017-10-01

In this article, we propose ZnO thin films as a suitable material for piezoresistors in transparent and flexible electronics. ZnO thin films have been deposited by DC reactive magnetron sputtering at room temperature at various oxygen partial pressures. All the films have a wurtzite structure with a strong (0002) texture measured by XRD and are almost stoichiometric as measured by inductively coupled plasma optical emission spectroscopy. The effect of oxygen concentration on grain growth has been studied by in-situ multi-beam optical stress sensor, showing internal stress going from 350 MPa to -1.1 GPa. The transition between tensile and compressive stress corresponds to the transition between metallic and oxidized mode of reactive sputtering. This transition also induces a large variation in optical properties—from absorbent to transparent, and in the resistivity—from 4 × 10 - 2 Ω .cm to insulating. Finally, the piezoresistance of the thin film has been studied and showed a gauge factor (ΔR/R)/ɛ comprised between -5.8 and -8.5.

Soft X-ray spectrometer design for warm dense plasma measurements on DARHT Axis-I

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramey, Nicholas Bryan; Perry, John Oliver; Coleman, Joshua Eugene

2017-07-11

A preliminary design study is being performed on a soft X-ray spectrometer to measure K-shell spectra emitted by a warm dense plasma generated on Axis-I of the Dual-Axis Radiographic Hydrodynamic Testing (DARHT) facility at Los Alamos National Laboratory. The 100-ns-long intense, relativistic electron pulse with a beam current of 1.7 kA and energy of 19.8 MeV deposits energy into a thin metal foil heating it to a warm dense plasma. The collisional ionization of the target by the electron beam produces an anisotropic angular distribution of K-shell radiation and a continuum of both scattered electrons and Bremsstrahlung up to themore » beam energy of 19.8 MeV. The principal goal of this project is to characterize these angular distributions to determine the optimal location to deploy the soft X-ray spectrometer. In addition, a proof-of-principle design will be presented. The ultimate goal of the spectrometer is to obtain measurements of the plasma temperature and density to benchmark equation-of-state models of the warm dense matter regime.« less

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Thin film mechanics

NASA Astrophysics Data System (ADS)

Cooper, Ryan C.

This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate the role of grain boundaries on the strength of chemical vapor deposited graphene. The results from these studies suggest that two dimensional films have remarkably high strength-reaching the intrinsic limit of molecular bonds. Chapter 5 explores the viscoelastic properties of heterogeneous polydimethylsiloxane (PDMS) microfilms through dynamic nanoindentation. PDMS microfilms are irradiated with an electron beam creating a 3 m-thick film with an increased cross-link density. The change in mechanical properties of PDMS due to thermal history and accelerator have been explored by a variety of tests, but the effect of electron beam irradiation is still unknown. The resulting structure is a stiff microfilm embedded in a soft rubber with some transformational strain induced by the cross-linking volume changes. Chapter 5 employs a combination of dynamic nanoindentation and finite element analysis to determine the change in stiffness as a function of electron beam irradiation. The experimental results are compared to the literature. The results of these experimental and numerical techniques provide exciting opportu- nities in future research. Two dimensional materials and flexible thin films are exciting materials for novel applications with new form factors, such as flexible electronics and microfluidic devices. The results herein indicate that you can accurately model the strength of two dimsensional materials and that these materials are robust against nanoscale defects. The results also reveal local variation of mechanical properties in PDMS microfilms. This allows one to design substrates that flex with varying amounts of strain on the surface. Combining the mechanics of two dimensional materials with that of a locally irradiated PDMS film could achieve a new class of flexible microelectromechanical systems. Large-scale growth of two dimensional materials will be structurally robust-even in the presence of nanostructural defects-and PDMS microfilms can be irradiated to vary strain of the electromechanical systems. These systems could be designed to investigate electromechanical coupling in two dimensional films or for a substitute to traditional silicon microdevices. (Abstract shortened by UMI.)

New evaporator station for the center for accelerator target science

NASA Astrophysics Data System (ADS)

Greene, John P.; Labib, Mina

2018-05-01

As part of an equipment grant provided by DOE-NP for the Center for Accelerator Target Science (CATS) initiative, the procurement of a new, electron beam, high-vacuum deposition system was identified as a priority to insure reliable and continued availability of high-purity targets. The apparatus is designed to contain TWO electron beam guns; a standard 4-pocket 270° geometry source as well as an electron bombardment source. The acquisition of this new system allows for the replacement of TWO outdated and aging vacuum evaporators. Also included is an additional thermal boat source, enhancing our capability within this deposition unit. Recommended specifications for this system included an automated, high-vacuum pumping station, a deposition chamber with a rotating and heated substrate holder for uniform coating capabilities and incorporating computer-controlled state-of-the-art thin film technologies. Design specifications, enhanced capabilities and the necessary mechanical modifications for our target work are discussed.

RHEED-TRAXS as a tool for in-situ stoichiometry control.

NASA Astrophysics Data System (ADS)

Chandril, Sandeep; Keenan, Cameron; Myers, Thomas; Lederman, David

2008-03-01

RHEED-total reflection x-ray spectroscopy (-TRAXS) is an in-situ chemical and structural characterization technique which is highly surface sensitive. This consists of a grazing-angle electron beam from which characteristic x-rays from the sample are measured also at grazing angles. We have demonstrated that monolayer sensitivity in Y and Mn films on GaN can be achieved. We have also developed a theoretical model for the angular dependence of the x-ray Kα peaks for the thin films, based on Parratt's formalism for x-ray reflectivity and the electron trajectory simulation software CASINO, to correct for grazing angle electron beam as a source for x-rays. As the angular dependence is highly dependent upon the film thickness and the smoothness of the film, it can be used to determine the deposition rate of individual elements as well as the interface chemical roughness

Automated grain mapping using wide angle convergent beam electron diffraction in transmission electron microscope for nanomaterials.

PubMed

Kumar, Vineet

2011-12-01

The grain size statistics, commonly derived from the grain map of a material sample, are important microstructure characteristics that greatly influence its properties. The grain map for nanomaterials is usually obtained manually by visual inspection of the transmission electron microscope (TEM) micrographs because automated methods do not perform satisfactorily. While the visual inspection method provides reliable results, it is a labor intensive process and is often prone to human errors. In this article, an automated grain mapping method is developed using TEM diffraction patterns. The presented method uses wide angle convergent beam diffraction in the TEM. The automated technique was applied on a platinum thin film sample to obtain the grain map and subsequently derive grain size statistics from it. The grain size statistics obtained with the automated method were found in good agreement with the visual inspection method.

Atomic Scale Control of Competing Electronic Phases in Ultrathin Correlated Oxides

NASA Astrophysics Data System (ADS)

Shen, Kyle

2015-03-01

Ultrathin epitaxial thin films offer a number of unique advantages for engineering the electronic properties of correlated transition metal oxides. For example, atomically thin films can be synthesized to artificially confine electrons in two dimensions. Furthermore, using a substrate with a mismatched lattice constant can impose large biaxial strains of larger than 3% (Δa / a), much larger than can achieved in bulk single crystals. Since these dimensionally confined or strained systems may necessarily be less than a few unit cells thick, investigating their properties and electronic structure can be particularly challenging. We employ a combination of reactive oxide molecular beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES) to investigate how dimensional confinement and epitaxial strain can be used to manipulate electronic properties and structure in correlated transition metal oxide thin films. We describe some of our recent work manipulating and studying the electronic structure of ultrathin LaNiO3 through a thickness-driven metal-insulator transition between three and two unit cells (Nature Nanotechnology 9, 443, 2014), where coherent Fermi liquid-like quasiparticles are suppressed at the metal-insulator transition observed in transport. We also will describe some recent unpublished work using epitaxial strain to drive a Lifshitz transition in atomically thin films of the spin-triplet ruthenate superconductor Sr2RuO4, where we also can dramatically alter the quasiparticle scattering rates and drive the system towards non-Fermi liquid behavior near the critical point (B. Burganov, C. Adamo, in preparation). Funding provided by the Office of Naval Research and Air Force Office of Scientific Research.

Direct-Write Fabrication of Cellulose Nano-Structures via Focused Electron Beam Induced Nanosynthesis

PubMed Central

Ganner, Thomas; Sattelkow, Jürgen; Rumpf, Bernhard; Eibinger, Manuel; Reishofer, David; Winkler, Robert; Nidetzky, Bernd; Spirk, Stefan; Plank, Harald

2016-01-01

In many areas of science and technology, patterned films and surfaces play a key role in engineering and development of advanced materials. Here, we introduce a new generic technique for the fabrication of polysaccharide nano-structures via focused electron beam induced conversion (FEBIC). For the proof of principle, organosoluble trimethylsilyl-cellulose (TMSC) thin films have been deposited by spin coating on SiO2 / Si and exposed to a nano-sized electron beam. It turns out that in the exposed areas an electron induced desilylation reaction takes place converting soluble TMSC to rather insoluble cellulose. After removal of the unexposed TMSC areas, structured cellulose patterns remain on the surface with FWHM line widths down to 70 nm. Systematic FEBIC parameter sweeps reveal a generally electron dose dependent behavior with three working regimes: incomplete conversion, ideal doses and over exposure. Direct (FT-IR) and indirect chemical analyses (enzymatic degradation) confirmed the cellulosic character of ideally converted areas. These investigations are complemented by a theoretical model which suggests a two-step reaction process by means of TMSC → cellulose and cellulose → non-cellulose material conversion in excellent agreement with experimental data. The extracted, individual reaction rates allowed the derivation of design rules for FEBIC parameters towards highest conversion efficiencies and highest lateral resolution. PMID:27585861

Effect of copper and nickel doping on the optical and structural properties of ZnO

NASA Astrophysics Data System (ADS)

Muǧlu, G. Merhan; Sarıtaş, S.; ćakıcı, T.; Şakar, B.; Yıldırım, M.

2017-02-01

The present study is focused on the Cu doped ZnO and Ni doped ZnO dilute magnetic semiconductor thin films. ZnO:Cu and ZnO:Ni thin films were grown by Chemically Spray Pyrolysis (CSP) method on glass substrates. Optical analysis of the films was done spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. The structure, morphology, topology and elemental analysis of ZnO:Cu and ZnO:Ni dilute magnetic thin films were investigated by X-ray diffraction (XRD), Raman Analysis, field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM) techniques, respectively. Also The magnetic properties of the ZnO:Ni thin film was investigated by vibrating sample magnetometer (VSM) method. VSM measurements of ZnO:Ni thin film showed that the ferromagnetic behavior.

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

NASA Astrophysics Data System (ADS)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Low energy electron beam processing of YBCO thin films

NASA Astrophysics Data System (ADS)

Chromik, Š.; Camerlingo, C.; Sojková, M.; Štrbík, V.; Talacko, M.; Malka, I.; Bar, I.; Bareli, G.; Jung, G.

2017-02-01

Effects of low energy 30 keV electron irradiation of superconducting YBa2Cu3O7-δ thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 - 4 × 1020 electrons/cm2, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 1020 electrons/cm2. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cusbnd O chains that results in increased carrier's concentration in superconducting CuO2 planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

Secondary electron emission from a dielectric film subjected to an electric field. M.S. Thesis

NASA Technical Reports Server (NTRS)

Quoc-Nguyen, N.

1977-01-01

An electric field in the range of 0.3,3.3 kV/mm is created normal to a thin film FEP teflon sample which accumulates potential of up to 8.8, 13.7 or 18.3 kV when exposed to an electron beam having energy of 10.0, 15.0 or 20.0 kV, respectively. It is found that the secondary electron emission from the charged sample varies with field. The threshold voltage, at which the secondary electron emission coefficient sigma is unity, drops down from a low field value of 13.73 kV to a high field value of 13.11 kV for a 15.0 kV beam. A computational technique was developed that generates equipotential lines or contours and field vectors above a plane where potential is known. The utilization of conformal transformations allows the extension of the technique to configurations which map into a plane.

Structure and properties of polyaniline nanocomposite coatings containing gold nanoparticles formed by low-energy electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Surui; Rogachev, A. A.; Yarmolenko, M. A.; Rogachev, A. V.; Xiaohong, Jiang; Gaur, M. S.; Luchnikov, P. A.; Galtseva, O. V.; Chizhik, S. A.

2018-01-01

Highly ordered conductive polyaniline (PANI) coatings containing gold nanoparticles were prepared by low-energy electron beam deposition method, with emeraldine base and chloroauric acid used as target materials. The molecular and chemical structure of the layers was studied by Fourier transform infrared, Raman, UV-vis and X-ray photoelectron spectroscopy. The morphology of the coatings was investigated by atomic force and transmission electron microscopy. Conductive properties were obtained by impedance spectroscopy method and scanning spreading resistance microscopy mode at the micro- and nanoscale. It was found that the emeraldine base layers formed from the products of electron-beam dispersion have extended, non-conductive polymer chains with partially reduced structure, with the ratio of imine and amine groups equal to 0.54. In case of electron-beam dispersion of the emeraldine base and chloroauric acid, a protoemeraldine structure is formed with conductivity 0.1 S/cm. The doping of this structure was carried out due to hydrochloric acid vapor and gold nanoparticles formed by decomposition of chloroauric acid, which have a narrow size distribution, with the most probable diameter about 40 nm. These gold nanoparticles improve the conductivity of the thin layers of PANI + Au composite, promoting intra- and intermolecular charge transfer of the PANI macromolecules aligned along the coating surface both at direct and alternating voltage. The proposed deposition method of highly oriented, conductive nanocomposite PANI-based coatings may be used in the direct formation of functional layers on conductive and non-conductive substrates.

Application Of Positron Beams For The Characterization Of Nano-scale Pores In Thin Films

NASA Astrophysics Data System (ADS)

Hirata, K.; Ito, K.; Kobayashi, Y.; Suzuki, R.; Ohdaira, T.; Eijt, S. W. H.; Schut, H.; van Veen, A.

2003-08-01

We applied three positron annihilation techniques, positron 3γ-annihilation spectroscopy, positron annihilation lifetime spectroscopy, and angular correlation of annihilation radiation, to the characterization of nano-scale pores in thin films by combining them with variable-energy positron beams. Characterization of pores in thin films is an important part of the research on various thin films of industrial importance. The results of our recent studies on pore characterization of thin films by positron beams will be reported here.

Thin film growth of CaFe2As2 by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

2016-01-01

Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

NASA Astrophysics Data System (ADS)

Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

2018-06-01

Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 < x < 0.6. The compositional dependence of the thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

Experimental Verification of Predicted Oscillations near a Spin Resonance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolanoski, Hermann; /Humboldt U., Berlin

2011-12-05

The E166 experiment at the Stanford Linear Accelerator Center (SLAC) has demonstrated a scheme for the production of polarized positrons which is suitable for implementation in a future Linear Collider. A multi-GeV electron beam passed through a helical undulator to generate multi-MeV, circularly polarized photons which were then converted in a thin target to produce positrons (and electrons) with longitudinal polarization above 80% at 6 MeV. The results are in agreement with GEANT4 simulations that include the dominant polarization-dependent interactions of electrons, positrons and photons in matter.

Microscopic observation of laser glazed yttria-stabilized zirconia coatings

NASA Astrophysics Data System (ADS)

Morks, M. F.; Berndt, C. C.; Durandet, Y.; Brandt, M.; Wang, J.

2010-08-01

Thermal barrier coatings (TBCs) are frequently used as insulation system for hot components in gas-turbine, combustors and power plant industries. The corrosive gases which come from combustion of low grade fuels can penetrate into the TBCs and reach the metallic components and bond coat and cause hot corrosion and erosion damage. Glazing the top coat by laser beam is advanced approach to seal TBCs surface. The laser beam has the advantage of forming a dense thin layer composed of micrograins. Plasma-sprayed yttria-stabilized zirconia (YSZ) coating was glazed with Nd-YAG laser at different operating conditions. The surface morphologies, before and after laser treatment, were investigated by scanning electron microscopy. Laser beam assisted the densification of the surface by remelting a thin layer of the exposed surface. The laser glazing converted the rough surface of TBCs into smooth micron-size grains with size of 2-9 μm and narrow grain boundaries. The glazed surfaces showed higher Vickers hardness compared to as-sprayed coatings. The results revealed that the hardness increases as the grain size decreases.

Detection and imaging of the oxygen deficiency in single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films using a scanning positron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reiner, M.; Gigl, T.; Hugenschmidt, C.

2015-03-16

Single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films were grown by pulsed laser deposition in order to probe the oxygen deficiency δ using a mono-energetic positron beam. The sample set covered a large range of δ (0.191 < δ < 0.791) yielding a variation of the critical temperature T{sub c} between 25 and 90 K. We found a linear correlation between the Doppler broadening of the positron electron annihilation line and δ determined by X-ray diffraction. Ab-initio calculations have been performed in order to exclude the presence of Y vacancies and to ensure the negligible influence of potentially present Ba or Cu vacancies tomore » the found correlation. Moreover, scanning with the positron beam allowed us to analyze the spatial variation of δ, which was found to fluctuate with a standard deviation of up to 0.079(5) within a single YBCO film.« less

Structural, optical, and photoluminescence characterization of electron beam evaporated ZnS/CdSe nanoparticles thin films

NASA Astrophysics Data System (ADS)

Mohamed, S. H.; Ali, H. M.

2011-01-01

Structural, optical, and photoluminescence investigations of ZnS capped with CdSe films prepared by electron beam evaporation are presented. X-ray diffraction analysis revealed that the ZnS/CdSe nanoparticles films contain cubic cadmium selenide and hexagonal zinc sulfide crystals and the ZnS grain sizes increased with increasing ZnS thickness. The refractive index was evaluated in terms of envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index values were found to increase with increasing ZnS thickness. However, the optical band gap and the extinction coefficient were decreased with increasing ZnS thickness. Photoluminescence (PL) investigations revealed the presence of two broad emission bands. The ZnS thickness significantly influenced the PL intensities.

Density gradient free electron collisionally excited X-ray laser

DOEpatents

Campbell, Edward M.; Rosen, Mordecai D.

1989-01-01

An operational X-ray laser (30) is provided that amplifies 3p-3s transition X-ray radiation along an approximately linear path. The X-ray laser (30) is driven by a high power optical laser. The driving line focused optical laser beam (32) illuminates a free-standing thin foil (34) that may be associated with a substrate (36) for improved structural integrity. This illumination produces a generally cylindrically shaped plasma having an essentially uniform electron density and temperature, that exists over a long period of time, and provides the X-ray laser gain medium. The X-ray laser (30) may be driven by more than one optical laser beam (32, 44). The X-ray laser (30) has been successfully demonstrated to function in a series of experimental tests.

Self consistent hydrodynamic description of the plasma wake field excitation induced by a relativistic charged-particle beam in an unmagnetized plasma

NASA Astrophysics Data System (ADS)

Jovanović, Dušan; Fedele, Renato; De Nicola, Sergio; Akhter, Tamina; Belić, Milivoj

2017-12-01

A self-consistent nonlinear hydrodynamic theory is presented of the propagation of a long and thin relativistic electron beam, for a typical plasma wake field acceleration configuration in an unmagnetized and overdense plasma. The random component of the trajectories of the beam particles as well as of their velocity spread is modelled by an anisotropic temperature, allowing the beam dynamics to be approximated as a 3D adiabatic expansion/compression. It is shown that even in the absence of the nonlinear plasma wake force, the localisation of the beam in the transverse direction can be achieved owing to the nonlinearity associated with the adiabatic compression/rarefaction and a coherent stationary state is constructed. Numerical calculations reveal the possibility of the beam focussing and defocussing, but the lifetime of the beam can be significantly extended by the appropriate adjustments, so that transverse oscillations are observed, similar to those predicted within the thermal wave and Vlasov kinetic models.

3D Structure Determination of Native Mammalian Cells using Cryo-FIB and Cryo-electron Tomography

PubMed Central

Wang, Ke; Strunk, Korrinn; Zhao, Gongpu; Gray, Jennifer L.; Zhang, Peijun

2012-01-01

Cryo-electron tomography (cryo-ET) has enabled high resolution three-dimensional (3D) structural analysis of virus and host cell interactions and many cell signaling events; these studies, however, have largely been limited to very thin, peripheral regions of eukaryotic cells or to small prokaryotic cells. Recent efforts to make thin, vitreous sections using cryo-ultramicrotomy have been successful, however, this method is technically very challenging and with many artifacts. Here, we report a simple and robust method for creating in situ, frozen-hydrated cell lamellas using a focused ion beam at cryogenic temperature (cryo-FIB), allowing access to any interior cellular regions of interest. We demonstrate the utility of cryo-FIB with high resolution 3D cellular structures from both bacterial cells and large mammalian cells. The method will not only facilitate high-throughput 3D structural analysis of biological specimens, but is also broadly applicable to sample preparation of thin films and surface materials without the need for FIB “lift-out”. PMID:22796867

An improved cryo-FIB method for fabrication of frozen hydrated lamella.

PubMed

Zhang, Jianguo; Ji, Gang; Huang, Xiaojun; Xu, Wei; Sun, Fei

2016-05-01

Cryo-electron tomography (cryo-ET) provides great insights into the ultrastructure of cells and tissues in their native state and provides a promising way to study the in situ 3D structures of macromolecular complexes. However, this technique has been limited on the very thin specimen, which is not applicable for most cells and tissues. Besides cryo-sectioning approach, cryo focused ion beam (cryo-FIB) appeared recently to achieve 'artifact-free' thin frozen hydrated lamella via fabrication. Considering that the current cryo-FIB methods need modified holders or cartridges, here, with a "D-shaped" molybdenum grid and a specific shutter system, we developed a simple cryo-FIB approach for thin frozen hydrated lamella fabrication, which fits both standard transmission cryo-electron microscopes with side-entry cryo-holders and state-of-the-art ones with AutoGrids. Our approach will expand the usage of cryo-FIB approach in many labs. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Tuning thermoelectricity in a Bi 2Se 3 topological insulator via varied film thickness

DOE PAGES

Guo, Minghua; Wang, Zhenyu; Xu, Yong; ...

2016-01-12

We report thermoelectric transport studies on Bi 2Se 3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi 2Se 3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

ELECTRON MICROSCOPIC OBSERVATION OF SPECIMENS UNDER CONTROLLED GAS PRESSURE

PubMed Central

Heide, Hans Gunther

1962-01-01

A technique for encasing specimens in a thin gas layer during their observation in the Siemens Elmiskop I is described. All gases can be employed at pressures up to one atmosphere. Destruction of specimens can occur in the beam; all organic specimens are particularly liable to decompose. The conditions under which this can be avoided are given. A useful application of the technique allows one to prevent specimens from drying out, as they normally do in vacuum. A further application uses the controlled removal of carbon for thinning organic layers and for selective etching of organic materials. PMID:13905967

Enhanced absorption with quantum dots, metal nanoparticles, and 2D materials

NASA Astrophysics Data System (ADS)

Simsek, Ergun; Mukherjee, Bablu; Guchhait, Asim; Chan, Yin Thai

2016-03-01

We fabricate and characterize mono- and few- layers of MoS2 and WSe2 on glass and SiO2/Si substrates. PbS quantum dots and/or Au nanoparticles are deposited on the fabricated thin metal dichalcogenide films by controlled drop casting and electron beam evaporation techniques. The reflection spectra of the fabricated structures are measured with a spatially resolved reflectometry setup. Both experimental and numerical results show that surface functionalization with metal nanoparticles can enhance atomically thin transition metal dichalcogenides' absorption and scattering capabilities, however semiconducting quantum dots do not create such effect.

Multilayer coating of optical substrates by ion beam sputtering

NASA Astrophysics Data System (ADS)

Daniel, M. V.; Demmler, M.

2017-10-01

Ion beam sputtering is well established in research and industry, despite its relatively low deposition rates compared to electron beam evaporation. Typical applications are coatings of precision optics, like filters, mirrors and beam splitter. Anti-reflective or high-reflective multilayer stacks benefit from the high mobility of the sputtered particles on the substrate surface and the good mechanical characteristics of the layers. This work gives the basic route from single layer optimization of reactive ion beam sputtered Ta2O5 and SiO2 thin films towards complex multilayer stacks for high-reflective mirrors and anti-reflective coatings. Therefore films were deposited using different oxygen flow into the deposition chamber Afterwards, mechanical (density, stress, surface morphology, crystalline phases) and optical properties (reflectivity, absorption and refractive index) were characterized. These knowledge was used to deposit a multilayer coating for a high reflective mirror.

Development of a high-resolution cavity-beam position monitor

NASA Astrophysics Data System (ADS)

Inoue, Yoichi; Hayano, Hitoshi; Honda, Yosuke; Takatomi, Toshikazu; Tauchi, Toshiaki; Urakawa, Junji; Komamiya, Sachio; Nakamura, Tomoya; Sanuki, Tomoyuki; Kim, Eun-San; Shin, Seung-Hwan; Vogel, Vladimir

2008-06-01

We have developed a high-resolution cavity-beam position monitor (BPM) to be used at the focal point of the ATF2, which is a test beam line that is now being built to demonstrate stable orbit control at ˜nanometer resolution. The design of the cavity structure was optimized for the Accelerator Test Facility (ATF) beam in various ways. For example, the cavity has a rectangular shape in order to isolate two dipole modes in orthogonal directions, and a relatively thin gap that is less sensitive to trajectory inclination. A two stage homodyne mixer with highly sensitive electronics and phase-sensitive detection was also developed. Two BPM blocks, each containing two cavity BPMs, were installed in the existing ATF beam line using a rigid support frame. After testing the basic characteristics, we measured the resolution using three BPMs. The system demonstrated 8.7 nm position resolution over a dynamic range of 5μm.

Chemistry of Non-Equilibrium Film Deposition.

DTIC Science & Technology

1985-12-01

titanium isopropoxide mixed with water solutions of lanthanum and lead nitrate. The gels were dehydrated, then fired to 600C to remove all organics...OW- ’so IRO $Va. ame Thin films; titanium dioxide; -PuZT,- ion beam deposition; annealing,’ trnmiso electron microscopy. 4 - . - S \\AISST 0A ZT *Can...Deposition....... . ... *.... .. ... .. ..... .. . .... 2 C. Nonequilibrium Physical Deposition.................... 3 1. Titanium Oxide Films

Phase Holograms In PMMA

NASA Technical Reports Server (NTRS)

Maker, Paul D.; Muller, Richard E.

1994-01-01

Complex, computer-generated phase holograms written in thin films of poly(methyl methacrylate) (PMMA) by process of electron-beam exposure followed by chemical development. Spatial variations of phase delay in holograms quasi-continuous, as distinquished from stepwise as in binary phase holograms made by integrated-circuit fabrication. Holograms more precise than binary holograms. Greater continuity and precision results in decreased scattering loss and increased imaging efficiency.

Chemical imaging of latent fingerprints by mass spectrometry based on laser activated electron tunneling.

PubMed

Tang, Xuemei; Huang, Lulu; Zhang, Wenyang; Zhong, Hongying

2015-03-03

Identification of endogenous and exogenous chemicals contained in latent fingerprints is important for forensic science in order to acquire evidence of criminal identities and contacts with specific chemicals. Mass spectrometry has emerged as a powerful technique for such applications without any derivatization or fluorescent tags. Among these techniques, MALDI (Matrix Assisted Laser Desorption Ionization) provides small beam size but has interferences with MALDI matrix materials, which cause ion suppressions as well as limited spatial resolution resulting from uneven distribution of MALDI matrix crystals with different sizes. LAET (Laser Activated Electron Tunneling) described in this work offers capabilities for chemical imaging through electron-directed soft ionization. A special film of semiconductors has been designed for collection of fingerprints. Nanoparticles of bismuth cobalt zinc oxide were compressed on a conductive metal substrate (Al or Cu sticky tape) under 10 MPa pressure. Resultant uniform thin films provide tight and shining surfaces on which fingers are impressed. Irradiation of ultraviolet laser pulses (355 nm) on the thin film instantly generates photoelectrons that can be captured by adsorbed organic molecules and subsequently cause electron-directed ionization and fragmentation. Imaging of latent fingerprints is achieved by visualization of the spatial distribution of these molecular ions and structural information-rich fragment ions. Atomic electron emission together with finely tuned laser beam size improve spatial resolution. With the LAET technique, imaging analysis not only can identify physical shapes but also reveal endogenous metabolites present in females and males, detect contacts with prohibited substances, and resolve overlapped latent fingerprints.

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, H. F.; Liu, Z. T.; Fan, C. C.

2016-08-15

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentionsmore » need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.« less

Skin dose measurement by using ultra-thin TLDs.

PubMed

Lin, J P; Chu, T C; Lin, S Y; Liu, M T

2001-09-01

The treatment schedule for radiation therapy is often interrupted because of complicated skin reactions. Quantitative information relating beam parameters and skin reactions will be helpful. Measurements were performed for 6-15 MV photons and 6-21 MeV electrons with ultra thin TLD films (GR-200F, surface area 0.5 x 0.5cm2, nominal thickness 5 mg cm(-2)). The skin doses for various field sizes, ranging from 10 x 10 to 40 x 40 cm2, and various incident angles of beam from 0 degrees to 80 degrees were measured. The ratios of skin dose to maximum dose in phantom for 10 x 10 cm2 are 16.10+/-0.68%, 14.03+/-1.04% and 10.59+/-0.64% for 6, 10 and 15 MV, respectively. Such ratios increase with a larger field size. For electrons the ratios are 72.59+/-1.72%, 78.52+/-2.99%, 78.89+/-2.86%, 86.08+/-2.62%. 87.75+/-1.94% and 86.33+/-3.09% for 6, 9, 12, 15, 18 and 21 MeV, respectively. They also increase with a larger size. The oblique factors also increase with larger incident angle.

Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption.

PubMed

Fryauf, David M; Diaz Leon, Juan J; Phillips, Andrew C; Kobayashi, Nobuhiko P

2017-05-10

Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors. In-situ argon ion bombardment was introduced after silver deposition and prior to the deposition of dielectric films to assess its effects on the performance of the mirrors. We found that ion bombardment of the silver influenced surface morphology and reflectivity, and these effects correlated with time between silver deposition and ion bombardment. The overall reflectivity at wavelengths in the range of 350-800 nm was found to improve due to ion bombardment, which was qualitatively interpreted as a result of decreased surface plasmon resonance coupling. We suggest that the observed decrease in coupling is caused by silver grain boundary pinning due to ion bombardment suppressing silver surface diffusion, forming smoother silver-dielectric interfaces.

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, Rointan; Nath, Prem

1982-01-01

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

NASA Astrophysics Data System (ADS)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

New developments in electron microscopy for serial image acquisition of neuronal profiles.

PubMed

Kubota, Yoshiyuki

2015-02-01

Recent developments in electron microscopy largely automate the continuous acquisition of serial electron micrographs (EMGs), previously achieved by laborious manual serial ultrathin sectioning using an ultramicrotome and ultrastructural image capture process with transmission electron microscopy. The new systems cut thin sections and capture serial EMGs automatically, allowing for acquisition of large data sets in a reasonably short time. The new methods are focused ion beam/scanning electron microscopy, ultramicrotome/serial block-face scanning electron microscopy, automated tape-collection ultramicrotome/scanning electron microscopy and transmission electron microscope camera array. In this review, their positive and negative aspects are discussed. © The Author 2015. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Maintaining stable radiation pressure acceleration of ion beams via cascaded electron replenishment

NASA Astrophysics Data System (ADS)

Shen, X. F.; Qiao, B.; Chang, H. X.; Zhang, W. L.; Zhang, H.; Zhou, C. T.; He, X. T.

2017-03-01

A method to maintain ion stable radiation pressure acceleration (RPA) from laser-irradiated thin foils is proposed, where a series of high-Z nanofilms are placed behind to successively replenish co-moving electrons into the accelerating foil as electron charging stations (ECSs). Such replenishment of co-moving electrons, on the one hand, helps to keep a dynamic balance between the electrostatic pressure in the accelerating slab and the increasing laser radiation pressure with a Gaussian temporal profile at the rising front, i.e. dynamically matching the optimal condition of RPA; on the other hand, it aids in suppressing the foil Coulomb explosion due to loss of electrons induced by transverse instabilities during RPA. Two-dimensional and three-dimensional particle-in-cell simulations show that a monoenergetic Si14+ beam with a peak energy of 3.7 GeV and particle number 4.8× {10}9 (charge 11 nC) can be obtained at an intensity of 7 × 1021 W cm-2 and the conversion efficiency from laser to high energy ions is improved significantly by using the ECSs in our scheme.

Low-kilovolt coherent electron diffractive imaging instrument based on a single-atom electron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chun-Yueh; Chang, Wei-Tse; Chen, Yi-Sheng

2016-03-15

In this work, a transmission-type, low-kilovolt coherent electron diffractive imaging instrument was constructed. It comprised a single-atom field emitter, a triple-element electrostatic lens, a sample holder, and a retractable delay line detector to record the diffraction patterns at different positions behind the sample. It was designed to image materials thinner than 3 nm. The authors analyzed the asymmetric triple-element electrostatic lens for focusing the electron beams and achieved a focused beam spot of 87 nm on the sample plane at the electron energy of 2 kV. High-angle coherent diffraction patterns of a suspended graphene sample corresponding to (0.62 Å){sup −1} were recorded. This workmore » demonstrated the potential of coherent diffractive imaging of thin two-dimensional materials, biological molecules, and nano-objects at a voltage between 1 and 10 kV. The ultimate goal of this instrument is to achieve atomic resolution of these materials with high contrast and little radiation damage.« less

Target design optimization for an electron accelerator driven subcritical facility with circular and square beam profiles.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gohar, M. Y. A; Sofu, T.; Zhong, Z.

2008-10-30

A subcritical facility driven by an electron accelerator is planned at the Kharkov Institute of Physics and Technology (KIPT) in Ukraine for medical isotope production, materials research, training, and education. The conceptual design of the facility is being pursued through collaborations between ANL and KIPT. As part of the design effort, the high-fidelity analyses of various target options are performed with formulations to reflect the realistic configuration and the three dimensional geometry of each design. This report summarizes the results of target design optimization studies for electron beams with two different beam profiles. The target design optimization is performed viamore » the sequential neutronic, thermal-hydraulic, and structural analyses for a comprehensive assessment of each configuration. First, a target CAD model is developed with proper emphasis on manufacturability to provide a basis for separate but consistent models for subsequent neutronic, thermal-hydraulic, and structural analyses. The optimizations are pursued for maximizing the neutron yield, streamlining the flow field to avoid hotspots, and minimizing the thermal stresses to increase the durability. In addition to general geometric modifications, the inlet/outlet channel configurations, target plate partitioning schemes, flow manipulations and rates, electron beam diameter/width options, and cladding material choices are included in the design optimizations. The electron beam interactions with the target assembly and the neutronic response of the subcritical facility are evaluated using the MCNPX code. the results for the electron beam energy deposition, neutron generation, and utilization in the subcritical pile are then used to characterize the axisymmetric heat generation profiles in the target assembly with explicit simulations of the beam tube, the coolant, the clad, and the target materials. Both tungsten and uranium are considered as target materials. Neutron spectra from tungsten and uranium are very similar allowing the use of either material in the subcritical assembly without changing its characteristics. However, the uranium target has a higher neutron yield, which increases the neutron flux of the subcritical assembly. Based on the considered dimensions and heat generation profiles, the commercial CFD software Star-CD is used for the thermal-hydraulic analysis of each target design to satisfy a set of thermal criteria, the most limiting of which being to maintain the water temperature 50 below the boiling point. It is found that the turbulence in the inlet channels dissipates quickly in narrow gaps between the target plates and, as a result, the heat transfer is limited by the laminar flow conditions. On average, 3-D CFD analyses of target assemblies agree well with 1-D calculations using RELAP (performed by KIPT). However, the recirculation and stagnation zones predicted with the CFD models prove the importance of a 3-D analysis to avoid the resulting hotspots. The calculated temperatures are subsequently used for the structural analysis of each target configuration to satisfy the other engineering design requirements. The thermo-structural calculations are performed mostly with NASTRAN and the results occasionally compared with the results from MARC. Both, NASTRAN and MARC are commercially available structural-mechanics analysis software. Although, a significant thermal gradient forms in target elements along the beam direction, the high thermal stresses are generally observed peripherally around the edge of thin target disks/plates. Due to its high thermal conductivity, temperatures and thermal stresses in tungsten target are estimated to be significantly lower than in uranium target. The deformations of the target disks/plates are found to be insignificant, which eliminate concerns for flow blockages in narrow coolant channels. Consistent with the specifications of the KIPT accelerator to be used in this facility, the electron beam power is 100-kW with electron energy in the range of 100 to 200 MeV. As expected, the 100 MeV electrons deposit their energy faster while the 200-MeV electrons spread their energy deposition further along the beam direction. However in that electron energy range, the energy deposition profiles near the beam window require very thin target plates/disks to limit the temperatures and thermal stresses.« less

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.

Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects,more » like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.« less

Low-cost ultra-thin broadband terahertz beam-splitter.

PubMed

Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

2012-02-27

A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

Next-generation all-silica coatings for UV applications

NASA Astrophysics Data System (ADS)

Melninkaitis, A.; Grinevičiūtė, L.; Abromavičius, G.; Mažulė, L.; Smalakys, L.; Pupka, E.; Š čiuka, M.; Buzelis, R.; Kičas, S.

2017-11-01

Band-gap and refractive index are known as fundamental properties determining intrinsic optical resistance of multilayer dielectric coatings. By considering this fact we propose novel approach to manufacturing of interference thin films, based on artificial nano-structures of modulated porosity embedded in high band-gap matrix. Next generation all-silica mirrors were prepared by GLancing Angle Deposition (GLAD) using electron beam evaporation. High reflectivity (HR) was achieved by tailoring the porosity of highly resistant silica material during the thin film deposition process. Furthermore, the proposed approach was also demonstrated to work well in case of anti-reflection (AR) coatings. Conventional HR HfO2 and SiO2 as well as AR Al2O3 and SiO2 multilayers produced by Ion Beam Sputtering (IBS) were used as reference coatings. Damage performance of experimental coatings was also analyzed. All-silica based GLAD approach resulted in significant improvement of intrinsic laser damage resistance properties if compared to conventional coatings. Besides laser damage testing, other characteristics of experimental coatings are analyzed and discussed - reflectance, surface roughness and optical scattering. We believe that reported concept can be expanded to virtually any design of thin film coatings thus opening a new way of next generation highly resistant thin films well suited for high power and UV laser applications.

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

NASA Astrophysics Data System (ADS)

Yan, X. L.; Coetsee, E.; Wang, J. Y.; Swart, H. C.; Terblans, J. J.

2017-07-01

The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar+ ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Atomically Thin Graphene Windows That Enable High Contrast Electron Microscopy without a Specimen Vacuum Chamber.

PubMed

Han, Yimo; Nguyen, Kayla X; Ogawa, Yui; Park, Jiwoong; Muller, David A

2016-12-14

Scanning electron microscopes (SEMs) require a high vacuum environment to generate and shape an electron beam for imaging; however, the vacuum conditions greatly limit the nature of specimens that can be examined. From a purely scattering physics perspective, it is not necessary to place the specimen inside the vacuum chamber-the mean free paths (MFPs) for electron scattering in air at typical SEM beam voltages are 50-100 μm. This is the idea behind the airSEM, which removes the specimen vacuum chamber from the SEM and places the sample in air. The thickness of the gas layer is less than a MFP from an electron-transparent window to preserve the shape and resolution of the incident beam, resulting in comparable imaging quality to an all-vacuum SEM. Present silicon nitride windows scatter far more strongly than the air gap and are currently the contrast and resolution limiting factor in the airSEM. Graphene windows have been used previously to wrap or seal samples in vacuum for imaging. Here we demonstrate the use of a robust bilayer graphene window for sealing the electron optics from the room environment, providing an electron transparent window with only a 2% drop in contrast. There is a 5-fold-increase in signal/noise ratio for imaging compared to multi-MFP-thick silicon nitride windows, enabling high contrast in backscattered, transmission, and surface imaging modes for the new airSEM geometry.

The effect of thin film morphology on the electrochemical performance of Cu-Sn anode for lithium rechargeable batteries.

PubMed

Polat, B D; Keleş, O

2014-05-01

We investigate the anode performance of non ordered and ordered nanostructured Cu-Sn thin films deposited via electron beam deposition technique. The ordered nanostructured Cu-Sn thin film having nano-porosities was fabricated using an oblique (co)deposition technique. Our results showed that the nano structured Cu-Sn thin film containing Cu-Sn nanorods had higher initial anodic capacity (790 mA h g(-)) than that of the non ordered thin film (330 mA h g(-)). But the capacity of the ordered nanostructured Cu-Sn thin film diminished after the first cycle and a steady state capacity value around 300 mA h g(-) is sustainable in following up to 80th cycle, which is attributed to the composition and morphology of the thin film. The presence of copper containing Sn nanorods leading to form nano-porosities as interstitial spaces among them, enhanced lithium ions movement within thin film and increased the thin film tolerance against the stress generated because of the drastic volume change occurred during lithiation-delithiation processes; hence, homogenously distributed porosities increased the cycle life of the thin film.

Characterization of Zinc Oxide (ZnO) piezoelectric properties for Surface Acoustic Wave (SAW) device

NASA Astrophysics Data System (ADS)

Rosydi Zakaria, Mohd; Johari, Shazlina; Hafiz Ismail, Mohd; Hashim, Uda

2017-11-01

In fabricating Surface Acoustic Wave (SAW) biosensors device, the substrate is one of important factors that affected to performance device. there are many types of piezoelectric substrate in the markets and the cheapest is zinc Oxide substrate. Zinc Oxide (ZnO) with its unique properties can be used as piezoelectric substrate along with SAW devices for detection of DNA in this research. In this project, ZnO thin film is deposited onto silicon oxide substrate using electron beam evaporation (E-beam) and Sol-Gel technique. Different material structure is used to compare the roughness and best piezoelectric substrate of ZnO thin film. Two different structures of ZnO target which are pellet and granular are used for e-beam deposition and one sol-gel liquid were synthesize and compared. Parameter for thickness of ZnO e-beam deposition is fixed to a 0.1kÅ for both materials structure and sol-gel was coat using spin coat technique. After the process is done, samples are annealed at temperature of 500°C for 2 hours. The structural properties of effect of post annealing using different material structure of ZnO are studied using Atomic Force Microscopic (AFM) for surface morphology and X-ray Diffraction (XRD) for phase structure.

Spot size dependence of laser accelerated protons in thin multi-ion foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Tung-Chang, E-mail: tcliu@umd.edu; Shao, Xi; Liu, Chuan-Sheng

2014-06-15

We present a numerical study of the effect of the laser spot size of a circularly polarized laser beam on the energy of quasi-monoenergetic protons in laser proton acceleration using a thin carbon-hydrogen foil. The used proton acceleration scheme is a combination of laser radiation pressure and shielded Coulomb repulsion due to the carbon ions. We observe that the spot size plays a crucial role in determining the net charge of the electron-shielded carbon ion foil and consequently the efficiency of proton acceleration. Using a laser pulse with fixed input energy and pulse length impinging on a carbon-hydrogen foil, amore » laser beam with smaller spot sizes can generate higher energy but fewer quasi-monoenergetic protons. We studied the scaling of the proton energy with respect to the laser spot size and obtained an optimal spot size for maximum proton energy flux. Using the optimal spot size, we can generate an 80 MeV quasi-monoenergetic proton beam containing more than 10{sup 8} protons using a laser beam with power 250 TW and energy 10 J and a target of thickness 0.15 wavelength and 49 critical density made of 90% carbon and 10% hydrogen.« less

Efficient solar cells by space processing

NASA Technical Reports Server (NTRS)

Schmidt, F. A.; Campisi, G. J.; Bevolo, A.; Shanks, H. R.; Williams, D. E.

1979-01-01

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Going for green

NASA Astrophysics Data System (ADS)

Extance, Andy

2010-05-01

Thousands of times per second a point of light turns on and off, moving side to side, top to bottom. It is a rhythm that ticks around the world, illuminating living rooms and office desks in the process. However, the cathode-ray TVs and monitors that metronomically fire electron guns at viewers - who are shielded only by thin sheets of glass - are rapidly being replaced by flat-screen technologies. Yet as the creation of images using scanning electron beams fades into history, a new form of technology is emerging that builds up pictures by scanning with light.

The Evolution of Fabricated Gold Thin Films to Nano-Micro Particles Under Thermal Annealing Process

NASA Astrophysics Data System (ADS)

Hajivaliei, Mahdi; Nazari, Saeed

2016-06-01

Gold (Au) thin films with thickness of 35nm were prepared by electron beam deposition onto flat glass substrates under high vacuum (5.3×10-3Pa) condition and they were annealed in the range of 573-873 K for 1 and 2h in atmospheric pressure. The influence of the annealing temperature on the evolution of Au thin film to nano-micro particles was studied. Moreover, the basic properties of the films, namely morphological, structural and optical were investigated. The X-ray diffraction (XRD) analysis revealed that the Au thin films were cubic structure phase with lattice parameter around a=4.0786Å. The most preferential orientation is along (111) planes for all Au films. The lattice parameter and grain size in the films were calculated by X-ray patterns and correlated with annealing temperatures. The obtained results of ultraviolet-visible spectrometry (UV-Vis) indicate that with increasing annealing temperature, the surface plasmon resonance peak of gold nanocrystallite will disappear which implies the size of particles are grown. Field-emission scanning electron microscopy (FE-SEM) results show that the prepared gold thin films have been converted to nano-micro gold particles in different annealing temperatures. These results lead to controlling the size of produced nanocrystallite.

Atomic structures of B20 FeGe thin films grown on the Si(111) surface

NASA Astrophysics Data System (ADS)

Kim, Wondong; Noh, Seungkyun; Yoon, Jisoo; Kim, Young Heon; Lee, Inho; Kim, Jae-Sung; Hwang, Chanyong

We investigated the growth and atomic structures of FeGe thin films on the Si (111) surface by using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). The 2 5nm- thick FeGe thin films were prepared on the clean Si(111) 7x7 surface by co-deposition of Fe and Ge from separated electron-beam evaporators. With direct deposition on the substrate at the temperature above 550 K, the surface of FeGe films was not smooth and consisted of coarse grains. By the combination of room-temperature annealing and post-annealing process around 800 K, the structure of FeGe thin films evolved into the well crystalized structures. Atom-resolved STM images revealed that there are at least four different surface terminations. We constructed atomic models for each surface terminations based on the bulk atomic arrangement of a B20 chiral structure and confirmed that the observed STM images are successfully reproduced by using computational simulations employing Vienna Ab Initio Simulation package (VASP) with a B20 chiral structure model. TEM cross-sectional images also support our atomic models by revealing clearly the characteristic zigzag features of B20 structures of FeGe(111) thin films.

Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Paik, Hanjong; Moyer, Jarrett A.; Spila, Timothy; Tashman, Joshua W.; Mundy, Julia A.; Freeman, Eugene; Shukla, Nikhil; Lapano, Jason M.; Engel-Herbert, Roman; Zander, Willi; Schubert, Jürgen; Muller, David A.; Datta, Suman; Schiffer, Peter; Schlom, Darrell G.

2015-10-01

We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior.

RHEED and EELS study of Pd/Al bimetallic thin film growth on different α-Al 2O 3 substrates

NASA Astrophysics Data System (ADS)

Moroz, V.; Rajs, K.; Mašek, K.

2002-06-01

Pd/Al bimetallic thin films were grown by molecular beam epitaxy on single-crystalline α-Al 2O 3(0 0 0 1) and (1 1 2¯ 0) surfaces. Substrate and deposit crystallographic structures and evolution of deposit lattice parameter during the growth were studied by reflection high-energy electron diffraction. The electron energy loss spectroscopy was used as an auxiliary method for chemical analysis. The bimetallic films were prepared by successive deposition of both Pd and Al metals. The structure of Pd and Al deposits in early stages of the growth and its dependence on the preparation conditions were studied. Two phases of Pd clusters covered by Al overlayer have been found. The formation of Al overlayer strongly influenced the lattice parameter of Pd clusters.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

High-Performance X-ray Detection in a New Analytical Electron Microscope

NASA Technical Reports Server (NTRS)

Lyman, C. E.; Goldstein, J. I.; Williams, D. B.; Ackland, D. W.; vonHarrach, S.; Nicholls, A. W.; Statham, P. J.

1994-01-01

X-ray detection by energy-dispersive spectrometry in the analytical electron microscope (AEM) is often limited by low collected X-ray intensity (P), modest peak-to-background (P/B) ratios, and limitations on total counting time (tau) due to specimen drift and contamination. A new AFM has been designed with maximization of P. P/B, and tau as the primary considerations. Maximization of P has been accomplished by employing a field-emission electron gun, X-ray detectors with high collection angles, high-speed beam blanking to allow only one photon into the detector at a time, and simultaneous collection from two detectors. P/B has been maximized by reducing extraneous background signals generated at the specimen holder, the polepieces and the detector collimator. The maximum practical tau has been increased by reducing specimen contamination and employing electronic drift correction. Performance improvments have been measured using the NIST standard Cr thin film. The 0-3 steradian solid angle of X-ray collection is the highest value available. The beam blanking scheme for X-ray detection provides 3-4 times greater throughput of X-rays at high count rates into a recorded spectrum than normal systems employing pulse-pileup rejection circuits. Simultaneous X-ray collection from two detectors allows the highest X-ray intensity yet recorded to be collected from the NIST Cr thin film. The measured P/B of 6300 is the highest level recorded for an AEM. In addition to collected X-ray intensity (cps/nA) and P/B measured on the standard Cr film, the product of these can be used as a figure-of-merit to evaluate instruments. Estimated minimum mass fraction (MMF) for Cr measured on the standard NIST Cr thin film is also proposed as a figure-of-merit for comparing X-ray detection in AEMs. Determinations here of the MMF of Cr detectable show at least a threefold improvement over previous instruments.

An extreme ultraviolet Michelson interferometer for experiments at free-electron lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hilbert, Vinzenz; Fuchs, Silvio; Paulus, Gerhard G.

2013-09-15

We present a Michelson interferometer for 13.5 nm soft x-ray radiation. It is characterized in a proof-of-principle experiment using synchrotron radiation, where the temporal coherence is measured to be 13 fs. The curvature of the thin-film beam splitter membrane is derived from the observed fringe pattern. The applicability of this Michelson interferometer at intense free-electron lasers is investigated, particularly with respect to radiation damage. This study highlights the potential role of such Michelson interferometers in solid density plasma investigations using, for instance, extreme soft x-ray free-electron lasers. A setup using the Michelson interferometer for pseudo-Nomarski-interferometry is proposed.

High Energy Cosmic Ray Electron Spectra measured from the ATIC Balloon Experiment

NASA Technical Reports Server (NTRS)

Chang, J.; Schmidt, W. K. H.; Adams, J. H.; Ahn, H. S.; Bashindzhagyan, G.; Batkov, K. E.; Christl, M.; Fazely, A. R.; Ganel, O.; Gunasingha, R. M.

2003-01-01

The Advanced Thin Ionization Calorimeter Balloon Experiment (ATIC) is specifically designed for high energy cosmic ray ion detection. From simulation and a CERN beam test exposure we find that the design consisting of a graphite target and an energy detection device, a totally active calorimeter of BGO scintillator, gives us sufficient information to distinguish electrons from protons up to the TeV energy range. Balloon observations were successfully carried out over Antarctica in both 2000/2001 and 2002/2003 for a total of more than 35 days. This paper presents preliminary results on the spectrum of high energy electrons observed in the first ATIC flight.

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

NASA Technical Reports Server (NTRS)

Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

1990-01-01

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Modeling on the cathodoluminescence properties of the thin film phosphors for field emission flat panel displays

NASA Astrophysics Data System (ADS)

Cho, Kyu-Gong

2000-12-01

In order to investigate the effects of the film roughness with the fundamental luminance parameters of thin film phosphors, Y2 O3:Eu films with different thickness and roughness values were deposited on various substrate materials using a pulsed laser deposition technique under a controlled experimental procedure. The best luminous efficiency was observed from the Y2O3:Eu films on quartz substrates due to the smaller refractive index and low absorption characteristics of the quartz substrates which produce a larger amount of total internal reflection in the film and low loss of light intensity during the multiple internal reflections. The trapped light inside the film can escape the film more easily due to rougher film surface. The better epitaxial growth capability of the Y2O 3:Eu films with the LaAlO3 substrates resulted in higher luminous efficiency in the small surface roughness region. Higher luminous efficiency was observed in reflection mode than in transmission mode due to the contribution of diffusely scattered light at the air-film interface. A new theoretical model based on the diffraction scattering theory of light, the steady-state diffusion condition of carriers and the Kanaya-Okayama's electron- beam-solid interaction range satisfactorily explains all the experimental results mentioned above. The model also provides solid understandings on the cathodoluminescence properties of the thin film phosphors with the effects of other single or multiple luminance parameters. The parameters encountered for the model are surface roughness, electron-beam-solid interaction, surface recombination rate of carriers, charge carrier diffusion properties, multiple scattering at the interfaces (air- film, film-substrate, and substrate-air), optical properties of the material, film thickness, and substrate type. The model supplies a general solution in both qualitative and quantitative ways to estimate the luminance properties of the thin film phosphors and it can be utilized to optimize the thin film phosphor properties for the application of field emission flat panel displays.

Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

2018-04-01

Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

Perspective on the Role of Negative Ions and Ion-Ion Plasmas in Heavy Ion Fusion Science, Magnetic Fusion Energy,and Related Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grisham, L. R.; Kwan, J. W.

2008-08-01

Some years ago it was suggested that halogen negative ions could offer a feasible alternative path to positive ions as a heavy ion fusion driver beam which would not suffer degradation due to electron accumulation in the accelerator and beam transport system, and which could be converted to a neutral beam by photodetachment near the chamber entrance if desired. Since then, experiments have demonstrated that negative halogen beams can be extracted and accelerated away from the gas plume near the source with a surviving current density close to what could be achieved with a positive ion of similar mass, andmore » with comparable optical quality. In demonstrating the feasibility of halogen negative ions as heavy ion driver beams, ion - ion plasmas, an interesting and somewhat novel state of matter, were produced. These plasmas, produced near the extractor plane of the sources, appear, based upon many lines of experimental evidence, to consist of almost equal densities of positive and negative chlorine ions, with only a small component of free electrons. Serendipitously, the need to extract beams from this plasma for driver development provides a unique diagnostic tool to investigate the plasma, since each component - positive ions, negative ions, and electrons - can be extracted and measured separately. We discuss the relevance of these observations to understanding negative ion beam extraction from electronegative plasmas such as halogens, or the more familiar hydrogen of magnetic fusion ion sources. We suggest a concept which might improve negative hydrogen extraction by the addition of a halogen. The possibility and challenges of producing ion - ion plasmas with thin targets of halogens or, perhaps, salt, is briefly addressed.« less

Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Kurita, Kensuke; Hagino, Harutoshi

2015-08-14

A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N{sub 2} atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H{sub 2} (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We proposemore » that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K{sup 2}) that of the thin films treated with EB irradiation alone.« less

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Designs for a quantum electron microscope.

PubMed

Kruit, P; Hobbs, R G; Kim, C-S; Yang, Y; Manfrinato, V R; Hammer, J; Thomas, S; Weber, P; Klopfer, B; Kohstall, C; Juffmann, T; Kasevich, M A; Hommelhoff, P; Berggren, K K

2016-05-01

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This 'quantum weirdness' could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or "quantum electron microscope". A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

One-dimensional analysis of thin-walled beams with diaphragms and its application to optimization for stiffness reinforcement

NASA Astrophysics Data System (ADS)

Jung, Joon Hee; Jang, Gang-Won; Shin, Dongil; Kim, Yoon Young

2018-03-01

This paper presents a method to analyze thin-walled beams with quadrilateral cross sections reinforced with diaphragms using a one-dimensional higher-order beam theory. The effect of a diaphragm is reflected focusing on the increase of static stiffness. The deformations on the beam-interfacing boundary of a thin diaphragm are described by using deformation modes of the beam cross section while the deformations inside the diaphragm are approximated in the form of complete cubic polynomials. By using the principle of minimum potential energy, its stiffness that significantly affects distortional deformation of a thin-walled beam can be considered in the one-dimensional beam analysis. It is shown that the accuracy of the resulting one-dimensional analysis is comparable with that by a shell element based analysis. As a means to demonstrate the usefulness of the present approach for design, position optimization problems of diaphragms for stiffness reinforcement of an automotive side frame are solved.

Evolution of the secondary electron emission during the graphitization of thin C films

NASA Astrophysics Data System (ADS)

Larciprete, Rosanna; Grosso, Davide Remo; Di Trolio, Antonio; Cimino, Roberto

2015-02-01

The relation between the atomic hybridization and the secondary electron emission yield (SEY) in carbon materials has been investigated during the thermal graphitization of thin amorphous carbon layers deposited by magnetron sputtering on Cu substrates. C1s core level, valence band and Raman spectroscopy were used to follow the sp3→sp2 structural reorganization while the SEY curves as a function of the kinetic energy of the incident electron beam were measured in parallel. We found that an amorphous C layer with a thickness of a few tens of nanometers is capable to modify the secondary emission properties of the clean copper surface, reducing the maximum yield from 1.4 to 1.2. A further SEY decrease observed with the progressive conversion of sp3 hybrids into six-fold aromatic domains was related to the electronic structure close to the Fermi level of the C-films. We found that a moderate structural quality of the C layer is sufficient to notably decrease the SEY as aromatic clusters of limited size approach the secondary emission properties of graphite.

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, R.; Nath, P.

1982-06-22

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment. 1 fig.

Improvement of Permeation of Solvent-Free Multilayer Encapsulation of Thin Films on Poly(ethylene terephthalate)

NASA Astrophysics Data System (ADS)

Han, Jin-Woo; Kang, Hee-Jin; Kim, Jong-Yeon; Kim, Gwi-Yeol; Seo, Dae-Shik

2006-12-01

In this study, inorganic multilayer thin-film encapsulation is adopted for the first time to protect an organic layer from moisture and oxygen. Inorganic multilayer thin-film encapsulation is deposited onto poly(ethylene terephthalate) (PET) using an electron beam and sputtering. The SiON/SiO2 and parylene layer show the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from a level of 0.57 g m-2 day-1 (bare substrate) to 1× 10-5 g m-2 day-1 after the application of a SiON and SiO2 layer. These results indicate that PET/parylene/SiO2/SiON barrier coatings have high potential for flexible organic light-emitting diode (OLED) applications.

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gálvez, S.; Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

Feasibility Studies of Parametric X-rays Use in a Medical Environment

NASA Astrophysics Data System (ADS)

Sones, Bryndol; Danon, Yaron; Blain, Ezekiel

2009-03-01

Parametric X-rays (PXR) are produced from the interaction of relativistic electrons with the periodic structure of crystal materials. Smooth X-ray energy tunability is achieved by rotating the crystal with respects to the electron beam direction. Experiments at the Rensselaer Polytechnic Institute 60-MeV LINAC produce quasi-monochromatic X-rays (6-35 keV) from various target crystals to include highly oriented pyrolytic graphite (HOPG), LiF, Si, Ge, Cu, and W using electron beam currents up to 6 uA. These experiments demonstrate the first PXR images and some of the merits of thin metallic crystals. Recent experiments with a 100-μm thick Cu crystal improve the Cu PXR (with energy ˜12 keV) to Cu fluorescence ratio by a factor of 20 compared to a 1 mm-thick Cu crystal. This study uses Monte Carlo techniques to investigate (1) PXR dose compared to emissions from simulated Mo, Rh, and W anodes for mammography applications and (2) electron scattering effects when considering LiF111, Si111, and Cu111 PXR production using electron beams with energies of 20-30 MeV. Advantages in using monochromatic PXR compared to X-rays from Mo and Rh anodes in mammography applications result in a dose per incident photon reduction by a factor of 2. Using 20 MeV electrons, the thinner Cu111 crystal for 15 keV PXR production results in an electron scattering angle of 30.7+/-0.2 mrad offering the best potential for PXR from lower energy electrons.

Structural, morphological and mechanical properties of niobium nitride thin films grown by ion and electron beams emanated from plasma

NASA Astrophysics Data System (ADS)

Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Umar, Zeeshan A.; Abdus Samad, Ubair

2016-05-01

The influence of variation in plasma deposition parameters on the structural, morphological and mechanical characteristics of the niobium nitride films grown by plasma-emanated ion and electron beams are investigated. Crystallographic investigation made by X-ray diffractometer shows that the film synthesized at 10 cm axial distance with 15 plasma focus shots (PFS) exhibits better crystallinity when compared to the other deposition conditions. Morphological analysis made by scanning electron microscope reveals a definite granular pattern composed of homogeneously distributed nano-spheroids grown as clustered particles for the film synthesized at 10 cm axial distance for 15 PFS. Roughness analysis demonstrates higher rms roughness for the films synthesized at shorter axial distance and by greater number of PFS. Maximum niobium atomic percentage (35.8) and maximum average hardness (19.4 ± 0.4 GPa) characterized by energy-dispersive spectroscopy and nano-hardness analyzer respectively are observed for film synthesized at 10 cm axial distance with 15 PFS.

Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography.

PubMed

Yuan, Liang Leon; Herman, Peter R

2015-12-21

A multi-level nanophotonic structure is a major goal in providing advanced optical functionalities as found in photonic crystals and metamaterials. A three-level nano-grating phase mask has been fabricated in an electron-beam resist (ma-N) to meet the requirement of holographic generation of a diamond-like 3D nanostructure in photoresist by a single exposure step. A 2D mask with 600 nm periodicity is presented for generating first order diffracted beams with a preferred π/2 phase shift on the X- and Y-axes and with sufficient 1(st) order diffraction efficiency of 3.5% at 800 nm wavelength for creating a 3D periodic nanostructure in SU-8 photoresist. The resulting 3D structure is anticipated to provide an 8% complete photonic band gap (PBG) upon silicon inversion. A thin SiO2 layer was used to isolate the grating layers and multiple spin-coating steps served to planarize the final resist layer. A reversible soft coating (aquaSAVE) was introduced to enable SEM inspection and verification of each insulating grating layer. This e-beam lithographic method is extensible to assembling multiple layers of a nanophotonic structure.

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

Since their discovery two decades ago, single walled carbon nanotubes (SWNT) have created an expansion of scientific interest that continues to grow to this day. This is due to a good balance between presence of bandgap, chemical reactivity and electrical conductivity. By interconnection of the individual nanotubes or modulation of the SWNT's electronic states, electronic devices made with thin films can become candidates for next generation electronics in areas such as memory devices, spintronics, energy storage devices and optoelectronics. My thesis focuses on the modulation of the electronic structure, optical properties and transport characteristics of single walled carbon nanotube films and their application in electronic and optoelectronic devices. Individual SWNTs have exceptional electronic properties but are difficult to manipulate for use in electronic devices. Alternatively, devices utilize SWNTs in thin films. SWNT thin films, however, may lose some of the properties due to Schottky barriers and electron hoping between metal-nanotube junctions and individual nanotubes within the film, respectively. Until recently, there has been no known route to preserve both conjugation and electrical properties. Prior attempts using covalent chemical functionalization led to re-hybridization of sp2 carbon centers to sp3, which introduces defects into the material and results in a decrease of electron mobility. As was discovered in Haddon Research group, depositing Group VI transition metals via atomic vapor deposition into SWNT films results in formation of bis-hexahapto covalent bonds. This (eta6-SWNT) Metal (eta6-SWNT) type of bonding was found to interconnect the delocalized systems without inducing structural re-hybridization and results in a decrease of the thin films electrical resistance. Recently, with the assistance of electron beam deposition, we deposited atomic metal vapor of various lanthanide metals on the SWNT thin films with the idea that they would also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Influence of Plasma Unsteadiness on the Spectrum and Shape of Microwave Pulses in a Plasma Relativistic Microwave Amplifier

NASA Astrophysics Data System (ADS)

Kartashov, I. N.; Kuzelev, M. V.; Strelkov, P. S.; Tarakanov, V. P.

2018-02-01

Dependence of the shape of a microwave pulse in a plasma relativistic microwave amplifier (PRMA) on the initial plasma electron density in the system is detected experimentally. Depending on the plasma density, fast disruption of amplification, stable operation of the amplifier during the relativistic electron beam (REB) pulse, and its delayed actuation can take place. A reduction in the output signal frequency relative to the input frequency is observed experimentally. The change in the shape of the microwave signal and the reduction in its frequency are explained by a decrease in the plasma density in the system. The dynamics of the plasma density during the REB pulse is determined qualitatively from the experimental data by using the linear theory of a PRMA with a thin-wall hollow electron beam. The processes in a PRMA are analyzed by means of the KARAT particle-in-cell code. It is shown that REB injection is accompanied by an increase in the mean energy of plasma electrons and a significant decrease in their density.

Novel fabrication method of microchannel plates

NASA Astrophysics Data System (ADS)

Yi, Whikun; Jeong, Taewon; Jin, Sunghwan; Yu, SeGi; Lee, Jeonghee; Kim, J. M.

2000-11-01

We have developed a novel microchannel plate (MCP) by introducing new materials and process technologies. The key features of our MCP are summarized as follows: (i) bulk alumina as a substrate, (ii) the channel location defined by a programmed-hole puncher, (iii) thin film deposition by electroless plating and/or sol-gel process, and (iv) an easy fabrication process suitable for mass production and a large-sized MCP. The characteristics of the resulting MCP have been evaluated with a high input current source such as a continuous electron beam from an electron gun and Spindt-type field emitters to obtain information on electron multiplication. In the case of a 0.28 μA incident beam, the output current enhances ˜170 times, which is equal to 1% of the total bias current of the MCP at a given bias voltage of 2600 V. When we insert a MCP between the cathode and the anode of a field emission display panel, the brightness of luminescent light increases 3-4 times by multiplying the emitted electrons through pore arrays of a MCP.

Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon.

PubMed

Sieradzki, A; Kuznicki, Z T

2013-01-01

The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.

Active pixel sensor array as a detector for electron microscopy.

PubMed

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

Additive patterning of ion-beam-sputtered non-conformal Ni80Fe20 and Co70Fe30 magnetic films

NASA Astrophysics Data System (ADS)

Redondo, C.; Moralejo, S.; Castaño, F.; Lee, W.; Nielsch, K.; Ross, C. A.; Castaño, F. J.

2006-04-01

Additive patterning processes of magnetic films grown using an ion-beam sputter (IBS) system designed to produce non-conformal films are described. The effects of the ion-gun beam current and Ar pressure on the sputtering rates and roughness of Ni80Fe20 and Co70Fe30 magnetic thin films are investigated using atomic-force microscopy (AFM) and the films' magnetic properties are measured using spatially resolved magneto-optical magnetometry. By tailoring the plasma solid angle, non-conformal film growth allows for simple additive patterning down to lateral dimensions ranging from a few microns to the deep-submicron regime, using templates defined by photolithography or electron-beam lithography, and shadow masks created using templated self-assembly. The magnetization reversal exhibited by patterned sub-200 nm nanodisc arrays with different lateral edge-roughness will be discussed.

One-dimensional nonlinear theory for rectangular helix traveling-wave tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Chengfang, E-mail: fchffchf@126.com; Zhao, Bo; Yang, Yudong

A 1-D nonlinear theory of a rectangular helix traveling-wave tube (TWT) interacting with a ribbon beam is presented in this paper. The RF field is modeled by a transmission line equivalent circuit, the ribbon beam is divided into a sequence of thin rectangular electron discs with the same cross section as the beam, and the charges are assumed to be uniformly distributed over these discs. Then a method of computing the space-charge field by solving Green's Function in the Cartesian Coordinate-system is fully described. Nonlinear partial differential equations for field amplitudes and Lorentz force equations for particles are solved numericallymore » using the fourth-order Runge-Kutta technique. The tube's gain, output power, and efficiency of the above TWT are computed. The results show that increasing the cross section of the ribbon beam will improve a rectangular helix TWT's efficiency and reduce the saturated length.« less

Parallel plate radiofrequency ion thruster

NASA Technical Reports Server (NTRS)

Nakanishi, S.

1982-01-01

An 8-cm-diam. argon ion thruster is described. It is operated by applying 100 to 160 Mhz rf power across a thin plasma volume in a strongly divergent static magnetic field. No cathode or electron emitter is required to sustain a continuous wave plasma discharge over a broad range of propellant gas flow. Preliminary results indicate that a large fraction of the incident power is being reflected by impedance mismatching in the coupling structure. Resonance effects due to plasma thickness, magnetic field strength, and distribution are presented. Typical discharge losses obtained to date are 500 to 600 W per beam ampere at extracted beam currents up to 60 mA.

Small scale mechanical characterization of thin foil materials via pin load microtesting

DOE PAGES

Wheeler, Robert; Pandey, Amit; Shyam, Amit; ...

2015-05-06

In situ scanning electron microscope (SEM) experiments, where small-scale mechanical tests are conducted on micro- and nanosized specimens, allow direct visualization of elastic and plastic responses over the entirety of the volume being deformed. This enables precise spatial and temporal correlation of slip events contributing to the plastic flow evidenced in a stress–strain curve. A new pin-loading methodology has been employed, in situ within the SEM, to conduct microtensile tests on thin polycrystalline metal foils. This approach can be tailored to a specific foil whose particular grain size may range from microns to tens of microns. Manufacture of the specializedmore » pin grip was accomplished via silicon photolithography-based processing followed by subsequent focused ion beam finishing. Microtensile specimen preparation was achieved by combining a stencil mask methodology employing broad ion beam sputtering along with focused ion beam milling in the study of several metallic foil materials. Finite-element analyses were performed to characterize the stress and strain distributions in the pin grip and micro-specimen under load. Furthermore, under appropriately conceived test conditions, uniaxial stress–strain responses measured within these foils by pin-load microtensile testing exhibit properties consistent with larger scale tests.« less

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Ultra-thin resin embedding method for scanning electron microscopy of individual cells on high and low aspect ratio 3D nanostructures.

PubMed

Belu, A; Schnitker, J; Bertazzo, S; Neumann, E; Mayer, D; Offenhäusser, A; Santoro, F

2016-07-01

The preparation of biological cells for either scanning or transmission electron microscopy requires a complex process of fixation, dehydration and drying. Critical point drying is commonly used for samples investigated with a scanning electron beam, whereas resin-infiltration is typically used for transmission electron microscopy. Critical point drying may cause cracks at the cellular surface and a sponge-like morphology of nondistinguishable intracellular compartments. Resin-infiltrated biological samples result in a solid block of resin, which can be further processed by mechanical sectioning, however that does not allow a top view examination of small cell-cell and cell-surface contacts. Here, we propose a method for removing resin excess on biological samples before effective polymerization. In this way the cells result to be embedded in an ultra-thin layer of epoxy resin. This novel method highlights in contrast to standard methods the imaging of individual cells not only on nanostructured planar surfaces but also on topologically challenging substrates with high aspect ratio three-dimensional features by scanning electron microscopy. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Utama, M. Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-10-01

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures. Electronic supplementary information (ESI) available: Further experiments on patterning and additional electrical characterizations data. See DOI: 10.1039/c4nr03817g

Coordinated STEM/FIB/NanoSIMS Analyses of Presolar Silicates in Comet Dust and Primitive Meteorites

NASA Technical Reports Server (NTRS)

Keller, Lindsay; Nguyen, A.; Rahman, Z.; Messenger, S.

2012-01-01

Silicate grains were among the most abundant mineralogical building blocks of our Solar System. These grains were the detritus from earlier generations of stars that have been recycled in the early solar nebula. Rare sub-micrometer survivors of this processing have been identified in meteorites, micrometeorites and interplanetary dust particles (IDPs). These silicate grains are recognized as presolar in origin because of their extremely anomalous isotopic compositions that reflect nucleosynthetic processes in their stellar sources (evolved stars, novae and supernovae). We perform coordinated chemical, mineralogical and isotopic studies of these grains to determine their origins and histories. We examine the complex mineralogy and petrography of presolar silicates using imaging, diffraction and chemical data obtained from thin sections with the JSC JEOL 2500 field-emission STEM equipped with a Noran thin window energy dispersive x-ray (EDX) spectrometer and a Gatan Tridiem GIF. Quantitative element x-ray maps (spectrum images) are acquired by rastering a 4 nm incident probe whose dwell time is minimized to avoid beam damage and element diffusion during mapping. Successive image layers are acquired and combined in order to achieve approx 1% counting statistics for major elements. The IDP samples are prepared by ultramicrotomy of particles embedded in epoxy or elemental sulfur. After EDX mapping, the sections are subjected to C, N, and O isotopic imaging with the JSC NanoSIMS 50L ion microprobe. We prepare sections of some meteorite grains using the JSC FEI Quanta 3D focused ion beam (FIB) instrument. The specimen surface is protected from the FIB milling process by layers of electron beam-deposited C and Pt followed by an ion-deposited Pt layer. We also use the FIB to preferentially remove surrounding grains to reduce the background in subsequent NanoSIMS measurements. For mineralogical studies, we again employ the FIB instrument to deposit a protective cap over the grain of interest and then extract the grain and thin it to electron transparency for TEM analysis.

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

Crystallization dynamics and interface stability of strontium titanate thin films on silicon.

PubMed

Hanzig, Florian; Hanzig, Juliane; Mehner, Erik; Richter, Carsten; Veselý, Jozef; Stöcker, Hartmut; Abendroth, Barbara; Motylenko, Mykhaylo; Klemm, Volker; Novikov, Dmitri; Meyer, Dirk C

2015-04-01

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO 2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO 3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO 3 layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO 3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO 3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Girsova, S. L., E-mail: girs@ispms.tsc.ru; Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Meisner, S. N., E-mail: msn@ispms.tsc.ru

The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

High-Current-Density Thermionic Cathodes and the Generation of High-Voltage Electron Beams

DTIC Science & Technology

1989-04-30

Cathode Temperature =1700 OC Figure 37: Peak gun voltage = 90 kV -57- 60- 0 EGUN 327 ~40 0S 20’ Vacuum 5 .2 x 10 Tor 0 o 0 15202 30 Time (jis...by modeling the filament as a thin disk. The shape of the H - V -, 2 actual filament is sketched in Fig. 2. The EGUN code 1 131 is used to calculate

Site-Specific Preparation of Intact Solid–Liquid Interfaces by Label-Free In Situ Localization and Cryo-Focused Ion Beam Lift-Out

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zachman, Michael J.; Asenath-Smith, Emily; Estroff, Lara A.

Abstract Scanning transmission electron microscopy (STEM) allows atomic scale characterization of solid–solid interfaces, but has seen limited applications to solid–liquid interfaces due to the volatility of liquids in the microscope vacuum. Although cryo-electron microscopy is routinely used to characterize hydrated samples stabilized by rapid freezing, sample thinning is required to access the internal interfaces of thicker specimens. Here, we adapt cryo-focused ion beam (FIB) “lift-out,” a technique recently developed for biological specimens, to prepare intact internal solid–liquid interfaces for high-resolution structural and chemical analysis by cryo-STEM. To guide the milling process we introduce a label-freein situmethod of localizing subsurface structuresmore » in suitable materials by energy dispersive X-ray spectroscopy (EDX). Monte Carlo simulations are performed to evaluate the depth-probing capability of the technique, and show good qualitative agreement with experiment. We also detail procedures to produce homogeneously thin lamellae, which enable nanoscale structural, elemental, and chemical analysis of intact solid–liquid interfaces by analytical cryo-STEM. This work demonstrates the potential of cryo-FIB lift-out and cryo-STEM for understanding physical and chemical processes at solid–liquid interfaces.« less

Ion-beam-assisted deposition of Au nanocluster/Nb 2O 5 thin films with nonlinear optical properties

NASA Astrophysics Data System (ADS)

Cotell, C. M.; Schiestel, S.; Carosella, C. A.; Flom, S.; Hubler, G. K.; Knies, D. L.

1997-05-01

Gold nanocluster thin films (˜ 200 nm thickness) consisting of metal clusters ˜ 5 nm in size embedded in a matrix of Nb 2O 5 were deposited by ion beam-assisted deposition (IBAD) by coevaporation of Au and Nb with O 2+ ion bombardment. The microstructure and optical characteristics of these films were examined as-deposited and after annealing at 600°C. Annealing crystallized the amorphous oxide matrix and ripened the nanoclusters. A strong linear absorption at the wavelength of the surface plasmon resonance for Au developed as a result of annealing. The linear optical behavior was modeled using Mie scattering theory. Good agreement was found between the nanocluster sizes predicted by the theory and the particle sizes observed experimentally using transmission electron microscopy (TEM). The nonlinear optical (NLO) properties of the nanocluster films were probed experimentally using degenerate four wave mixing and nonlinear transmission. The wavelength was near the peak of the surface plasmon resonance as measured by VIS/UV spectroscopy. Values of | χxxxx(3)| were 7.3 × 10 -8 and 3.0 × 10 -10 esu for annealed and unannealed samples, respe The dominant mechanism for the nonlinear response was change in dielectric constant due to the generation of a distribution of hot, photoexcited electrons.

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL) parallel electron beam lithography configuration to repair damaged or missing carbon nanofiber cathodes. The I-V response and lithography results from EBID tungsten-based devices were comparable to CNF-based DEAL devices indicating a successful repair technique.

Structural, Optical, and Vibrational Properties of ZnO Microrods Deposited on Silicon Substrate

NASA Astrophysics Data System (ADS)

Lahlouh, Bashar I.; Ikhmayies, Shadia J.; Juwhari, Hassan K.

2018-03-01

Zinc oxide (ZnO) microrod films deposited by spray pyrolysis on silicon substrate at 350 ± 5°C have been studied and evaluated, and compared with thin films deposited by electron beam to confirm the identity of the studied samples. The films were characterized using different techniques. The microrod structure was studied and confirmed by scanning electron microscopy. Fourier-transform infrared (FTIR) spectroscopy and x-ray diffraction analysis confirmed successful deposition of ZnO thin films with the expected wurtzite structure. Reflectance data showed a substantial drop across the whole studied wavelength range. The photoluminescence (PL) spectra of the studied samples showed a peak at ˜ 360 nm, representing a signature of ZnO. The shift in the PL peak position is due to defects and other species present in the films, as confirmed by FTIR and energy-dispersive x-ray spectroscopy results.

The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

PubMed

Polat, B Deniz; Keles, Ozgul

2015-12-01

The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

PubMed Central

Cojocaru-Mirédin, Oana; Schwarz, Torsten; Choi, Pyuck-Pa; Herbig, Michael; Wuerz, Roland; Raabe, Dierk

2013-01-01

Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the nanoscale and in three dimensions. Indeed, APT possesses high sensitivity (in the order of ppm) and high spatial resolution (sub nm). Considerable efforts were done here to prepare an APT tip which contains the desired grain boundary with a known structure. Indeed, site-specific sample preparation using combined focused-ion-beam, electron backscatter diffraction, and transmission electron microscopy is presented in this work. This method allows selected grain boundaries with a known structure and location in Cu(In,Ga)Se2 thin-films to be studied by atom probe tomography. Finally, we discuss the advantages and drawbacks of using the atom probe tomography technique to study the grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. PMID:23629452

Transport properties of ultra-thin VO{sub 2} films on (001) TiO{sub 2} grown by reactive molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paik, Hanjong; Tashman, Joshua W.; Moyer, Jarrett A.

2015-10-19

We report the growth of (001)-oriented VO{sub 2} films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO{sub 2} surface. Another key limitation is interdiffusion with the (001) TiO{sub 2} substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion bymore » using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO{sub 2} films with abrupt MIT behavior.« less

Cryo-FIB specimen preparation for use in a cartridge-type cryo-TEM.

PubMed

He, Jie; Hsieh, Chyongere; Wu, Yongping; Schmelzer, Thomas; Wang, Pan; Lin, Ying; Marko, Michael; Sui, Haixin

2017-08-01

Cryo-electron tomography (cryo-ET) is a well-established technique for studying 3D structural details of subcellular macromolecular complexes and organelles in their nearly native context in the cell. A primary limitation of the application of cryo-ET is the accessible specimen thickness, which is less than the diameters of almost all eukaryotic cells. It has been shown that focused ion beam (FIB) milling can be used to prepare thin, distortion-free lamellae of frozen biological material for high-resolution cryo-ET. Commercial cryosystems are available for cryo-FIB specimen preparation, however re-engineering and additional fixtures are often essential for reliable results with a particular cryo-FIB and cryo-transmission electron microscope (cryo-TEM). Here, we describe our optimized protocol and modified instrumentation for cryo-FIB milling to produce thin lamellae and subsequent damage-free cryotransfer of the lamellae into our cartridge-type cryo-TEM. Published by Elsevier Inc.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

NASA Astrophysics Data System (ADS)

Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

2014-12-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Nan; Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn; Lin, Jie

A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logicmore » integrated circuit applications.« less

Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry

NASA Astrophysics Data System (ADS)

Brieva, A. C.; Jenkins, T. E.; Jones, D. G.; Strössner, F.; Evans, D. A.; Clark, G. F.

2006-04-01

The internal structure of copper(II)-phthalocyanine (CuPc) thin films grown on SiO2/Si by organic molecular beam deposition has been studied by grazing incidence x-ray reflectometry (GIXR) and atomic force microscopy. The electronic density profile is consistent with a structure formed by successive monolayers of molecules in the α form with the b axis lying in the substrate surface plane. The authors present an electronic density profile model of CuPc films grown on SiO2/Si. The excellent agreement between the model and experimental data allows postdeposition monitoring of the internal structure of the CuPc films with the nondestructive GIXR technique, providing a tool for accurate control of CuPc growth on silicon-based substrates. In addition, since the experiments have been carried out ex situ, they show that these structures can endure ambient conditions.

Resonant soft x-ray GISAXS on block copolymer films

NASA Astrophysics Data System (ADS)

Wang, Cheng; Araki, T.; Watts, B.; Ade, H.; Hexemer, A.; Park, S.; Russell, T. P.; Schlotter, W. F.; Stein, G. E.; Tang, C.; Kramer, E. J.

2008-03-01

Ordered block copolymer thin films may have important applications in modern device fabrication. Current characterization methods such as conventional GISAXS have fixed electron density contrast that can be overwhelmed by surface scattering. However, soft x-rays have longer wavelength, energy dependent contrast and tunable penetration, making resonant GISAXS a very promising tool for probing nanostructured polymer thin films. Our preliminary investigation was performed using PS-b-P2VP block copolymer films on beam-line 5-2 SSRL, and beam-line 6.3.2 at ALS, LBNL. The contrast/sensitivity of the scattering pattern varies significantly with photon energy close to the C K-edge (˜290 eV). Also, higher order peaks are readily observed, indicating hexagonal packing structure in the sample. Comparing to the hard x-ray GISAXS data of the same system, it is clear that resonant GISAXS has richer data and better resolution. Beyond the results on the A-B diblock copolymers, results on ABC block copolymers are especially interesting.

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

NASA Astrophysics Data System (ADS)

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie

2017-05-01

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si K-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N2+-irradiated substrates, and show no polarization dependence for an Ar+-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N2+-irradiated, and Ar+-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of μm by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, X. Q.; Takahashi, T.; Matsuhata, H.

2013-12-02

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayersmore » grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.« less

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shen, X. Q.; Takahashi, T.; Rong, X.; Chen, G.; Wang, X. Q.; Shen, B.; Matsuhata, H.; Ide, T.; Shimizu, M.

2013-12-01

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Heavy-ion beam induced effects in enriched gadolinium target films prepared by molecular plating

NASA Astrophysics Data System (ADS)

Mayorov, D. A.; Tereshatov, E. E.; Werke, T. A.; Frey, M. M.; Folden, C. M.

2017-09-01

A series of enriched gadolinium (Gd, Z = 64) targets was prepared using the molecular plating process for nuclear physics experiments at the Cyclotron Institute at Texas A&M University. After irradiation with 48Ca and 45Sc projectiles at center-of-target energies of Ecot = 3.8-4.7 MeV/u, the molecular films displayed visible discoloration. The morphology of the films was examined and compared to the intact target surface. The thin films underwent a heavy-ion beam-induced density change as identified by scanning electron microscopy and α-particle energy loss measurements. The films became thinner and more homogenous, with the transformation occurring early on in the irradiation. This transformation is best described as a crystalline-to-amorphous phase transition induced by atomic displacement and destruction of structural order of the original film. The chemical composition of the thin films was surveyed using energy dispersive spectroscopy and X-ray diffraction, with the results confirming the complex chemistry of the molecular films previously noted in other publications.

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

2017-06-01

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

SU-E-T-447: Growth of Metal Whiskers Under External Beam Irradiation: Experimental Evidence and Implications in Medical Electronic Devices for Radiation Therapy Treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shvydka, D; Warrell, G; Parsai, E

2015-06-15

Purpose: Thin metallic protrusions, termed “whiskers,” have been identified as a cause of failure in devices ranging from satellites to pacemakers. For decades, lead was used in tin-based soldering alloys to suppress whisker formation. With the adoption of the Restriction of Hazardous Substances act and the expiration of its exemption on medical devices, including implanted medical devices (IMDs), electronic circuits are required to be lead-free as of July 2014. The effect of radiation on such soldering components remains unknown. Methods: We have irradiated a thin (150 nm) tin metal layer, deposited on a 3 mm thick glass substrate, with amore » 6 MeV medical linac (Varian TrueBeam) electron beam in five 2-hour long sessions. After receiving ∼10 kGy, whisker growth on the sample was assessed with scanning electron microscopy and compared to a reference sample not exposed to radiation. Results: After 10 hours of irradiation, the sample was found to develop intense whisker infestation, while the reference sample remained in its pristine as-deposited condition. Repeating the same irradiation schedule generated more and longer whiskers. The observed phenomenon can be explained through charge accumulation in the glass substrate, generating an electric field that promotes whisker growth. The observed substrate glass darkening under irradiation points towards development of color centers related to charge trapping. Experiments on the same type of samples with direct application of the external field in a capacitor-like setting also resulted in intense whisker growth. Conclusion: Extreme care should be taken in dealing with all electronic devices, especially IMDs, produced with lead-free solder and components, subject to radiation exposure. While in our experiments strong electric fields were intentionally generated to accelerate whisker growth over hours, in everyday use the circuit soldering may cause problems in a matter of days or months. Designated reliability testing under radiation must be conducted. This work is partially supported by NRC grant No. NRC-HQ-12-G-38-0042.« less

Anomalous electronic heat capacity of copper nanowires at sub-Kelvin temperatures

NASA Astrophysics Data System (ADS)

Viisanen, K. L.; Pekola, J. P.

2018-03-01

We have measured the electronic heat capacity of thin film nanowires of copper and silver at temperatures 0.1-0.3 K; the films were deposited by standard electron-beam evaporation. The specific heat of the Ag films of sub-100-nm thickness agrees with the bulk value and the free-electron estimate, whereas that of similar Cu films exceeds the corresponding reference values by one order of magnitude. The origin of the anomalously high heat capacity of copper films remains unknown for the moment. Based on the small heat capacity at low temperatures and the possibility to devise a tunnel probe thermometer on it, metal films form a promising absorber material, e.g., for microwave photon calorimetry.

Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

NASA Astrophysics Data System (ADS)

Woo, S. Y.; Hosseini Vajargah, S.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Botton, G. A.

2012-10-01

Unambiguous identification of anti-phase boundaries (APBs) in heteroepitaxial films of GaSb grown on Si has been so far elusive. In this work, we present conventional transmission electron microscopy (TEM) diffraction contrast imaging using superlattice reflections, in conjunction with convergent beam electron diffraction analysis, to determine a change in polarity across APBs in order to confirm the presence of anti-phase disorder. In-depth analysis of anti-phase disorder is further supported with atomic resolution high-angle annular dark-field scanning transmission electron microscopy. The nature of APBs in GaSb is further elucidated by a comparison to previous results for GaAs epilayers grown on Si.

Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Mohanty, P.; Kabiraj, D.; Mandal, R. K.; Kulriya, P. K.; Sinha, A. S. K.; Rath, Chandana

2014-04-01

TiO2 thin films deposited by electron beam evaporation technique annealed in either O2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford's backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]).

Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Purohit, Anuradha; Chander, S.; Dhaka, M. S.

2017-04-01

An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

Correlation of live-cell imaging with volume scanning electron microscopy.

PubMed

Lucas, Miriam S; Günthert, Maja; Bittermann, Anne Greet; de Marco, Alex; Wepf, Roger

2017-01-01

Live-cell imaging is one of the most widely applied methods in live science. Here we describe two setups for live-cell imaging, which can easily be combined with volume SEM for correlative studies. The first procedure applies cell culture dishes with a gridded glass support, which can be used for any light microscopy modality. The second approach is a flow-chamber setup based on Ibidi μ-slides. Both live-cell imaging strategies can be followed up with serial blockface- or focused ion beam-scanning electron microscopy. Two types of resin embedding after heavy metal staining and dehydration are presented making best use of the particular advantages of each imaging modality: classical en-bloc embedding and thin-layer plastification. The latter can be used only for focused ion beam-scanning electron microscopy, but is advantageous for studying cell-interactions with specific substrates, or when the substrate cannot be removed. En-bloc embedding has diverse applications and can be applied for both described volume scanning electron microscopy techniques. Finally, strategies for relocating the cell of interest are discussed for both embedding approaches and in respect to the applied light and scanning electron microscopy methods. Copyright © 2017 Elsevier Inc. All rights reserved.

rf streak camera based ultrafast relativistic electron diffraction.

PubMed

Musumeci, P; Moody, J T; Scoby, C M; Gutierrez, M S; Tran, T

2009-01-01

We theoretically and experimentally investigate the possibility of using a rf streak camera to time resolve in a single shot structural changes at the sub-100 fs time scale via relativistic electron diffraction. We experimentally tested this novel concept at the UCLA Pegasus rf photoinjector. Time-resolved diffraction patterns from thin Al foil are recorded. Averaging over 50 shots is required in order to get statistics sufficient to uncover a variation in time of the diffraction patterns. In the absence of an external pump laser, this is explained as due to the energy chirp on the beam out of the electron gun. With further improvements to the electron source, rf streak camera based ultrafast electron diffraction has the potential to yield truly single shot measurements of ultrafast processes.

Cutaway line drawing of STS-34 middeck experiment Polymer Morphology (PM)

NASA Technical Reports Server (NTRS)

1989-01-01

Cutaway line drawing shows components of STS-34 middeck experiment Polymer Morphology (PM). Components include the EAC, heat exchanger, sample cell control (SCC), sample cells, source, interferometer, electronics, carousel drive, infrared (IR) beam, and carousel. PM, a 3M-developed organic materials processing experiment, is designed to explore the effects of microgravity on polymeric materials as they are processed in space. The samples of polymeric materials being studied in the PM experiment are thin films (25 microns or less) approximately 25mm in diameter. The samples are mounted between two infrared transparent windows in a specially designed infrared cell that provides the capability of thermally processing the samples to 200 degrees Celsius with a high degree of thermal control. The samples are mounted on a carousel that allows them to be positioned, one at a time, in the infrared beam where spectra may be acquired. The Generic Electronics Module (GEM) provides all carousel and

Electron Beam Brazing of Titanium for Construction in Space

NASA Technical Reports Server (NTRS)

Flom, Yury

2006-01-01

An extended presence of humans in space requires an in-situ capability to construct various permanent structures to support scientific research, power generation, communication, radiation shielding and other functions. Electron Beam (EB) vacuum brazing has been identified as one of the best joining processes for in-space joining, particular for making a large quantity of permanent joints as required for construction of the sizeable truss structures. Thin wall titanium tubes are perhaps the best choice because of their high stiffness, excellent strength-to-weight ratio and great metal forming and joining ability. An innovative EB vacuum spot brazing process is being developed at Goddard Space Flight Center to be used for robotic as well as human-assisted construction in space. This paper describes experimental results obtained during the initial effort of EB brazing of titanium tubes with the special emphasis on low temperature aluminum filler metals.

In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System.

PubMed

Jang, Jae Hyuck; Kim, Young-Min; He, Qian; Mishra, Rohan; Qiao, Liang; Biegalski, Michael D; Lupini, Andrew R; Pantelides, Sokrates T; Pennycook, Stephen J; Kalinin, Sergei V; Borisevich, Albina Y

2017-07-25

Vacancy dynamics and ordering underpin the electrochemical functionality of complex oxides and strongly couple to their physical properties. In the field of the epitaxial thin films, where connection between chemistry and film properties can be most clearly revealed, the effects related to oxygen vacancies are attracting increasing attention. In this article, we report a direct, real-time, atomic level observation of the formation of oxygen vacancies in the epitaxial LaCoO 3 thin films and heterostructures under the influence of the electron beam utilizing scanning transmission electron microscopy (STEM). In the case of LaCoO 3 /SrTiO 3 superlattice, the formation of the oxygen vacancies is shown to produce quantifiable changes in the interatomic distances, as well as qualitative changes in the symmetry of the Co sites manifested as off-center displacements. The onset of these changes was observed in both the [100] pc and [110] pc orientations in real time. Additionally, annular bright field images directly show the formation of oxygen vacancy channels along [110]pc direction. In the case of 15 u.c. LaCoO 3 thin film, we observe the sequence of events during beam-induced formation of oxygen vacancy ordered phases and find them consistent with similar processes in the bulk. Moreover, we record the dynamics of the nucleation, growth, and defect interaction at the atomic scale as these transformations happen. These results demonstrate that we can track dynamic oxygen vacancy behavior with STEM, generating atomic-level quantitative information on phase transformation and oxygen diffusion.

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Combinatorial synthesis and hydrogenation of Mg/Al libraries prepared by electron beam physical vapor deposition.

PubMed

Garcia, Gemma; Doménech-Ferrer, Roger; Pi, Francesc; Santiso, Josep; Rodríguez-Viejo, Javier

2007-01-01

We have grown thin film libraries of the Mg-Al system using a high-throughput synthesis methodology that combines the sequential deposition of pure elements (Mg and Al) by an electron-beam (e-beam) evaporation technique and the use of a special set of moving shadow masks. This novel mask has been designed to simultaneously prepare four identical arrays of different compositions that will permit the characterization of the same library after several treatments. Wavelength dispersive spectroscopy (WDS) and micro-X-ray diffraction have been used as high-throughput screening techniques for the determination of the composition and structure of every member of the library in the as-deposited state and after hydrogenation at 1 atm of H2 during 24 h at three different temperatures: 60, 80, and 110 degrees C. We have analyzed the influence of the Mg-Al ratio on the hydrogenation of magnesium, as well as on the appearance of complex hydride phases. We have also found that aluminum can act as a catalyzer for the hydrogenation reaction of magnesium.

Compositional analysis and depth profiling of thin film CrO{sub 2} by heavy ion ERDA and standard RBS: a comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khamlich, S., E-mail: skhamlich@gmail.com; Department of Chemistry, Tshwane University of Technology, Private Bag X 680, Pretoria, 0001; The African Laser Centre, CSIR campus, P.O. Box 395, Pretoria

2012-08-15

Chromium dioxide (CrO{sub 2}) thin film has generated considerable interest in applied research due to the wide variety of its technological applications. It has been extensively investigated in recent years, attracting the attention of researchers working on spintronic heterostructures and in the magnetic recording industry. However, its synthesis is usually a difficult task due to its metastable nature and various synthesis techniques are being investigated. In this work a polycrystalline thin film of CrO{sub 2} was prepared by electron beam vaporization of Cr{sub 2}O{sub 3} onto a Si substrate. The polycrystalline structure was confirmed through XRD analysis. The stoichiometry andmore » elemental depth distribution of the deposited film were measured by ion beam nuclear analytical techniques heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS), which both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Moreover, the analysis carried out highlights the importance of complementary usage of the two techniques to obtain a more complete description of elemental content and depth distribution in thin films. - Graphical abstract: Heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS) both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Highlights: Black-Right-Pointing-Pointer Thin films of CrO{sub 2} have been grown by e-beam evaporation of Cr{sub 2}O{sub 3} target in vacuum. Black-Right-Pointing-Pointer The composition was determined by heavy ion-ERDA and RBS. Black-Right-Pointing-Pointer HI-ERDA and RBS provided information on the light and heavy elements, respectively.« less

Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity

DOE PAGES

Li, Chen; Poplawsky, Jonathan; Yan, Yanfa; ...

2017-07-01

Here in this paper we review a systematic study of the structure-property correlations of a series of defects in CdTe solar cells. A variety of experimental methods, including aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy, and electron-beam-induced current have been combined with density-functional theory. The research traces the connections between the structures and electrical activities of individual defects including intra-grain partial dislocations, grain boundaries and the CdTe/CdS interface. The interpretations of the physical origin underlying the structure-property correlation provide insights that should further the development of future CdTe solar cells.

Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chen; Poplawsky, Jonathan; Yan, Yanfa

Here in this paper we review a systematic study of the structure-property correlations of a series of defects in CdTe solar cells. A variety of experimental methods, including aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy, and electron-beam-induced current have been combined with density-functional theory. The research traces the connections between the structures and electrical activities of individual defects including intra-grain partial dislocations, grain boundaries and the CdTe/CdS interface. The interpretations of the physical origin underlying the structure-property correlation provide insights that should further the development of future CdTe solar cells.

Fabrication of 94Zr thin target for recoil distance doppler shift method of lifetime measurement

NASA Astrophysics Data System (ADS)

Gupta, C. K.; Rohilla, Aman; Abhilash, S. R.; Kabiraj, D.; Singh, R. P.; Mehta, D.; Chamoli, S. K.

2014-11-01

A thin isotopic 94Zr target of thickness 520 μg /cm2 has been prepared for recoil distance Doppler shift method (RDM) lifetime measurement by using an electron beam deposition method on tantalum backing of 3.5 mg/cm2 thickness at Inter University Accelerator Center (IUAC), New Delhi. To meet the special requirement of smoothness of surface for RDM lifetime measurement and also to protect the outer layer of 94Zr from peeling off, a very thin layer of gold has been evaporated on a 94Zr target on a specially designed substrate holder. In all, 143 mg of 99.6% enriched 94Zr target material was utilized for the fabrication of 94Zr targets. The target has been successfully used in a recent RDM lifetime measurement experiment at IUAC.

Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

NASA Astrophysics Data System (ADS)

Sahoo, Pooja; Thangavel, R.

2018-05-01

In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

A neutron diagnostic for high current deuterium beams.

PubMed

Rebai, M; Cavenago, M; Croci, G; Dalla Palma, M; Gervasini, G; Ghezzi, F; Grosso, G; Murtas, F; Pasqualotto, R; Cippo, E Perelli; Tardocchi, M; Tollin, M; Gorini, G

2012-02-01

A neutron diagnostic for high current deuterium beams is proposed for installation on the spectral shear interferometry for direct electric field reconstruction (SPIDER, Source for Production of Ion of Deuterium Extracted from RF plasma) test beam facility. The proposed detection system is called Close-contact Neutron Emission Surface Mapping (CNESM). The diagnostic aims at providing the map of the neutron emission on the beam dump surface by placing a detector in close contact, right behind the dump. CNESM uses gas electron multiplier detectors equipped with a cathode that also serves as neutron-proton converter foil. The cathode is made of a thin polythene film and an aluminium film; it is designed for detection of neutrons of energy >2.2 MeV with an incidence angle < 45°. CNESM was designed on the basis of simulations of the different steps from the deuteron beam interaction with the beam dump to the neutron detection in the nGEM. Neutron scattering was simulated with the MCNPX code. CNESM on SPIDER is a first step towards the application of this diagnostic technique to the MITICA beam test facility, where it will be used to resolve the horizontal profile of the beam intensity.

Beam tracking with micromegas & wire chambers in secondary electron detection configuration

NASA Astrophysics Data System (ADS)

Voštinar, M.; Fernández, B.; Pancin, J.; Alvarez, M. A. G.; Chaminade, T.; Damoy, S.; Doré, D.; Drouart, A.; Druillole, F.; Frémont, G.; Kebbiri, M.; Materna, T.; Monmarthe, E.; Panebianco, S.; Papaevangelou, T.; Riallot, M.; Savajols, H.; Spitaels, C.

2013-12-01

The focal plane of S3 (Super Separator Spectrometer), a new experimental area of SPIRAL2 at GANIL, will be used for identification of nuclei, and requires the reconstruction of their trajectories and velocities by the Time Of Flight (TOF) method. Classical tracking detectors used in-beam would generate a lot of angular and energy straggling due to their thickness. One solution is the use of a SED (Secondary Electron Detection), which consists of a thin emissive foil in beam coupled to a low pressure gaseous detector out of the beam, for the detection of secondary electrons ejected from the foil. Moreover, this type of detector can be used for classical beam tracking at low energies, or for example at NFS (GANIL) for the FALSTAFF experiment for the reconstruction of fission fragments trajectories. Several low pressure gaseous detectors such as wire chambers and Micromegas have been constructed and tested since 2008. High counting rate capabilities and good time resolution obtained in previous tests motivated the construction of a new real-size 2D prototype wire chamber and a 2D bulk Micromegas at low pressure. For the first time, spatial resolution of the Micromegas at low pressure (below 20 mbar) in the SED configuration was measured. Different tests have been performed in order to characterize time and spatial properties of both prototypes, giving spatial resolution in the horizontal (X) direction of 0.90(0.02) mm FWHM for the real size prototype and 0.72(0.08) mm FWHM for Micromegas, and a time resolution of ~ 110(25) ps for the real size prototype.

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations.

PubMed

De Winter, D A M; Lebbink, M N; Wiggers De Vries, D F; Post, J A; Drury, M R

2011-09-01

Focused ion beam-scanning electron microscope (FIB-SEM) tomography is a powerful application in obtaining three-dimensional (3D) information. The FIB creates a cross section and subsequently removes thin slices. The SEM takes images using secondary or backscattered electrons, or maps every slice using X-rays and/or electron backscatter diffraction patterns. The objective of this study is to assess the possibilities of combining FIB-SEM tomography with cathodoluminescence (CL) imaging. The intensity of CL emission is related to variations in defect or impurity concentrations. A potential problem with FIB-SEM CL tomography is that ion milling may change the defect state of the material and the CL emission. In addition the conventional tilted sample geometry used in FIB-SEM tomography is not compatible with conventional CL detectors. Here we examine the influence of the FIB on CL emission in natural diamond and the feasibility of FIB-SEM CL tomography. A systematic investigation establishes that the ion beam influences CL emission of diamond, with a dependency on both the ion beam and electron beam acceleration voltage. CL emission in natural diamond is enhanced particularly at low ion beam and electron beam voltages. This enhancement of the CL emission can be partly explained by an increase in surface defects induced by ion milling. CL emission enhancement could be used to improve the CL image quality. To conduct FIB-SEM CL tomography, a recently developed novel specimen geometry is adopted to enable sequential ion milling and CL imaging on an untilted sample. We show that CL imaging can be manually combined with FIB-SEM tomography with a modified protocol for 3D microstructure reconstruction. In principle, automated FIB-SEM CL tomography should be feasible, provided that dedicated CL detectors are developed that allow subsequent milling and CL imaging without manual intervention, as the current CL detector needs to be manually retracted before a slice can be milled. Due to the required high electron beam acceleration voltage for CL emission, the resolution for FIB-SEM CL tomography is currently limited to several hundreds of nm in XY and up to 650 nm in Z for diamonds. Opaque materials are likely to have an improved Z resolution, as CL emission generated deeper in the material is not able to escape from it. © 2011 The Authors Journal of Microscopy © 2011 Royal Microscopical Society.

TU-H-BRC-06: Temperature Simulation of Tungsten and W25Re Targets to Deliver High Dose Rate 10 MV Photons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J; Trovati, S; Loo, B

Purpose: To study the impact of electron beam size, target thickness, and target temperature on the ability of the flattening filter-free mode (FFF) treatment head to deliver high-dose-rate irradiations. Methods: The dose distribution and transient temperature of the X-ray target under 10 MeV electron beam with pulse length of 5 microseconds, and repetition rate of 1000 Hz was studied. A MCNP model was built to calculate the percentage depth dose (PPD) distribution in a water phantom at a distance of 100 cm. ANSYS software was used to run heat transfer simulations. The PPD and temperature for both tungsten and W25Remore » targets for different electron beam sizes (FHWM 0.2, 0.5, 1 and 2 mm) and target thickness (0.2 to 2 mm) were studied. Results: Decreasing the target thickness from 1 mm to 0.5 mm, caused a surface dose increase about 10 percent. For both target materials, the peak temperature was about 1.6 times higher for 0.5 mm electron beam compared to the 1 mm beam after reaching their equilibrium. For increasing target thicknesses, the temperature rise caused by the first pulse is similar for all thicknesses, however the temperature difference for subsequent pulses becomes larger until a constant ratio is reached. The target peak temperature after reaching equilibrium can be calculated by adding the steady state temperature and the amplitude of the temperature oscillation. Conclusion: This work indicates the potential to obtain high dose rate irradiation by selecting target material, geometry and electron beam parameters. W25Re may not outperformed tungsten when the target is thick due to its relatively low thermal conductivity. The electron beam size only affects the target temperature but not the PPD. Thin target is preferred to obtain high dose rate and low target temperature, however, the resulting high surface dose is a major concern. NIH funding:R21 EB015957-01; DOD funding:W81XWH-13-1-0165 BL, PM, PB, and RF are founders of TibaRay, Inc. BL is also a borad member. BL and PM have received research grants from Varian Medical System, Inc. and RaySearch Laboratory. RF is an employee of Siemens Healthcare GmbH.« less

[Preparation and transmissivity of ZnS nanocolumn thin films with glancing angle deposition technology].

PubMed

Lu, Li-Fang; Xu, Zheng; Zhang, Fu-Jun; Zhao, Su-Ling; Song, Dan-Dan; Li, Jun-Ming; Wang, Yong-Sheng; Xu, Xu-Rong

2010-02-01

Nanocrystalline ZnS thin films were fabricated by glancing angle deposition (GLAD) technology in an electron beam evaporation system. Deposition was carried out in the custom vacuum chamber at a base pressure 3 x 10(-4) Pa, and the deposition rate was fixed at 0.2 nm x s(-1). ZnS films were deposited on pieces of indium tin oxide (ITO) substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0 degrees, 80 degrees and 85 degrees off the substrate normal respectively. X-ray diffraction (XRD) spectra and scanning electron microscope (SEM) images showed that ZnS nanocrystalline films were formed on the substrates at different oblique angle, but the nanocolumn structure was only formed under the situation of alpha = 80 degrees and 85 degrees. The dynamics during the deposition process of the ZnS films at alpha = 0 degrees, 80 degrees and 85 degrees was analyzed. The transmitted spectra of ZnS thin films deposited on ITO substrates showed that the ZnS nanocolumn thin films could enhance the transmissivity in visible range. The ZnS nanocolumn could be used into electroluminescence device, and it would enhance the luminous efficiency of the device.

Lithium diffusion in sputter-deposited Li4Ti5O12 thin films

NASA Astrophysics Data System (ADS)

Wunde, F.; Berkemeier, F.; Schmitz, G.

2012-10-01

Li4Ti5O12 (LTO) thin films are deposited by dc-ion beam sputtering at different oxygen partial pressures and different substrate temperatures. In order to investigate, how these two parameters influence the atomic structure, the specimens are characterized by X-ray diffraction and transmission electron microscopy. Electrochemical characterization of the films is done by cyclic voltammetry and chrono-potentiometry. To determine an averaged chemical diffusion coefficient of lithium, a method is developed, evaluating c-rate tests. The results obtained by this method are compared to results obtained by the well established galvanostatic intermittent titration technique (GITT), which is used to determine a concentration dependent diffusion coefficient of lithium in LTO.

Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

USGS Publications Warehouse

Pearson, Christopher; Bowen, Leon; Lee, Myung Won; Fisher, Alison L.; Linton, Katherine E.; Bryce, Martin R.; Petty, Michael C.

2013-01-01

We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm–100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices.

Amorphization reaction in thin films of elemental Cu and Y

NASA Astrophysics Data System (ADS)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

The characteristics of a new negative metal ion beam source and its applications

NASA Astrophysics Data System (ADS)

Paik, Namwoong

2001-10-01

Numerous efforts at energetic thin film deposition processes using ion beams have been made to meet the demands of today's thin film industry. As one of these efforts, a new Magnetron Sputter Negative Ion Source (MSNIS) was developed. In this study, the development and the characterization of the MSNIS were investigated. Amorphous carbon films were used as a sample coating medium to evaluate the ion beam energy effect. A review of energetic Physical Vapor Deposition (PVD) techniques is presented in Chapter 1. The energetic PVD methods can be classified into two major categories: the indirect ion beam method Ion Beam Assisted Deposition (IBAD), and the direct ion beam method-Direct Ion Beam Deposition (DIBD). In this chapter, currently available DIBD processes such as Cathodic Arc, Laser Ablation, Ionized Physical Vapor Deposition (I-PVD) and Magnetron Sputter Negative Ion Source (MSNIS) are individually reviewed. The design and construction of the MSNIS is presented in chapter 2. The MSNIS is a hybrid of the conventional magnetron sputter configuration and the cesium surface ionizer. The negative sputtered ions are produced directly from the sputter target by surface ionization. In chapter 3, the ion beam and plasma characteristics of an 8″ diameter MSNIS are investigated using a retarding field analyzer and a cylindrical Langmuir Probe. The measured electron temperature is approximately 2-5 eV, while the plasma density and plasma potential were of the order of 10 11-1012 cm3 and 5-20 V, respectively, depending on the pressure and power. In chapter 4, in order to evaluate the effect of the ion beam on the resultant films, amorphous carbon films were deposited under various conditions. The structure of carbon films was investigated using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The result suggests the fraction of spa bonding is more than 70% in some samples prepared by MSNIS while magnetron sputtered samples showed less than 30%. (Abstract shortened by UMI.)

Investigation of the {Fe}/{Si} interface and its phase transformations

NASA Astrophysics Data System (ADS)

Fanciulli, M.; Degroote, S.; Weyer, G.; Langouche, G.

1997-04-01

Thin 57Fe films (3-10 Å) have been grown by molecular beam epitaxy (MBE) on (7 × 7) reconstructed Si(111) and (2 × 1) reconstructed Si(001) surfaces and by e-gun evaporation on an H-terminated Si(111) surface. Conversion electron Mössbauer spectroscopy (CEMS) with high statistical accuracy and resolution allowed a detailed microscopic investigation of the silicide formation mechanism and of the structural phase transformations upon annealing.

Morphologies of femtosecond laser ablation of ITO thin films using gaussian or quasi-flat top beams for OLED repair

NASA Astrophysics Data System (ADS)

Kim, Hoon-Young; Choi, Won-Suk; Ji, Suk-Young; Shin, Young-Gwan; Jeon, Jin-Woo; Ahn, Sanghoon; Cho, Sung-Hak

2018-02-01

This study compares the ablation morphologies obtained with a femtosecond laser of both Gaussian and quasi-flat top beam profiles when applied to indium tin oxide (ITO) thin films for the purpose of OLED repair. A femtosecond laser system with a wavelength of 1030 nm and pulse duration of 190 fs is used to pattern an ITO thin film. The laser fluence is optimized for patterning at 1.38 J/cm2. The patterned ITO thin film is then evaluated through both optical microscope and atomic force microscope. Ablations with a square quasi-flat top beam are demonstrated using slits with varying x- y axes. With the Gaussian beam, the pattern width of the ablated area is shown to range from 9.17 to 9.99 μm when the number of irradiation pulse increases from one to six. In contrast, when slit control is used to obtain a quasi-flat top beam, the ablated pattern width remains constant at 10 μm, despite the increase in the number of pulse. The improved surface roughness is correlated with the quasi-flat top beam through measured Ra values. Furthermore, when using the Gaussian beam, the minimum resolution of the controllable ablation depth on the ITO thin film is found to be 60 nm. In contrast, when the quasi-flat top beam is used, the minimum ablation depth decreases to 40 nm.

An in-plane magnetic chiral dichroism approach for measurement of intrinsic magnetic signals using transmitted electrons

PubMed Central

Song, Dongsheng; Tavabi, Amir H.; Li, Zi-An; Kovács, András; Rusz, Ján; Huang, Wenting; Richter, Gunther; Dunin-Borkowski, Rafal E.; Zhu, Jing

2017-01-01

Electron energy-loss magnetic chiral dichroism is a powerful technique that allows the local magnetic properties of materials to be measured quantitatively with close-to-atomic spatial resolution and element specificity in the transmission electron microscope. Until now, the technique has been restricted to measurements of the magnetic circular dichroism signal in the electron beam direction. However, the intrinsic magnetization directions of thin samples are often oriented in the specimen plane, especially when they are examined in magnetic-field-free conditions in the transmission electron microscope. Here, we introduce an approach that allows in-plane magnetic signals to be measured using electron magnetic chiral dichroism by selecting a specific diffraction geometry. We compare experimental results recorded from a cobalt nanoplate with simulations to demonstrate that an electron magnetic chiral dichroism signal originating from in-plane magnetization can be detected successfully. PMID:28504267

Multiscale permutation entropy analysis of laser beam wandering in isotropic turbulence.

PubMed

Olivares, Felipe; Zunino, Luciano; Gulich, Damián; Pérez, Darío G; Rosso, Osvaldo A

2017-10-01

We have experimentally quantified the temporal structural diversity from the coordinate fluctuations of a laser beam propagating through isotropic optical turbulence. The main focus here is on the characterization of the long-range correlations in the wandering of a thin Gaussian laser beam over a screen after propagating through a turbulent medium. To fulfill this goal, a laboratory-controlled experiment was conducted in which coordinate fluctuations of the laser beam were recorded at a sufficiently high sampling rate for a wide range of turbulent conditions. Horizontal and vertical displacements of the laser beam centroid were subsequently analyzed by implementing the symbolic technique based on ordinal patterns to estimate the well-known permutation entropy. We show that the permutation entropy estimations at multiple time scales evidence an interplay between different dynamical behaviors. More specifically, a crossover between two different scaling regimes is observed. We confirm a transition from an integrated stochastic process contaminated with electronic noise to a fractional Brownian motion with a Hurst exponent H=5/6 as the sampling time increases. Besides, we are able to quantify, from the estimated entropy, the amount of electronic noise as a function of the turbulence strength. We have also demonstrated that these experimental observations are in very good agreement with numerical simulations of noisy fractional Brownian motions with a well-defined crossover between two different scaling regimes.

Positron lifetime beam for defect studies in thin epitaxial semiconductor structures

NASA Astrophysics Data System (ADS)

Laakso, A.; Saarinen, K.; Hautojärvi, P.

2001-12-01

Positron annihilation spectroscopies are methods for direct identification of vacancy-type defects by measuring positron lifetime and Doppler broadening of annihilation radiation and providing information about open volume, concentration and atoms surrounding the defect. Both these techniques are easily applied to bulk samples. Only the Doppler broadening spectroscopy can be employed in thin epitaxial samples by utilizing low-energy positron beams. Here we describe the positron lifetime beam which will provide us with a method to measure lifetime in thin semiconductor layers.

Subgrain boundary analyses in deformed orthopyroxene by TEM/STEM with EBSD-FIB sample preparation technique

NASA Astrophysics Data System (ADS)

Kogure, Toshihiro; Raimbourg, Hugues; Kumamoto, Akihito; Fujii, Eiko; Ikuhara, Yuichi

2014-12-01

High-resolution structure analyses using electron beam techniques have been performed for the investigation of subgrain boundaries (SGBs) in deformed orthopyroxene (Opx) in mylonite from Hidaka Metamorphic Belt, Hokkaido, Japan, to understand ductile deformation mechanism of silicate minerals in shear zones. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) analysis of Opx porphyroclasts in the mylonitic rock indicated that the crystal orientation inside the Opx crystals gradually changes by rotation about the b-axis by SGBs and crystal folding. In order to observe the SGBs along the b-axis by transmission electron microscopy (TEM) or scanning TEM (STEM), the following sample preparation protocol was adopted. First, petrographic thin sections were slightly etched with hydrofluoric acid to identify SGBs in SEM. The Opx crystals whose b-axes were oriented close to the normal of the surface were identified by EBSD, and the areas containing SGBs were picked and thinned for (S) TEM analysis with a focused ion beam instrument with micro-sampling system. High-resolution TEM imaging of the SGBs in Opx revealed various boundary structures from a periodic array of dissociated (100) [001] edge dislocations to partially or completely incoherent crystals, depending on the misorientation angle. Atomic-resolution STEM imaging clearly confirmed the formation of clinopyroxene (Cpx) structure between the dissociated partial dislocations. Moreover, X-ray microanalysis in STEM revealed that the Cpx contains a considerable amount of calcium replacing iron. Such chemical inhomogeneity may limit glide motion of the dislocation and eventually the plastic deformation of the Opx porphyroclasts at a low temperature. Chemical profiles across the high-angle incoherent SGB also showed an enrichment of the latter in calcium at the boundary, suggesting that SGBs are an efficient diffusion pathway of calcium out of host Opx grain during cooling.

Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

NASA Astrophysics Data System (ADS)

Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

2013-11-01

Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

Theory of the spatial resolution of (scanning) transmission electron microscopy in liquid water or ice layers.

PubMed

de Jonge, Niels

2018-04-01

The sample dependent spatial resolution was calculated for transmission electron microscopy (TEM) and scanning TEM (STEM) of objects (e.g., nanoparticles, proteins) embedded in a layer of liquid water or amorphous ice. The theoretical model includes elastic- and inelastic scattering, beam broadening, and chromatic aberration. Different contrast mechanisms were evaluated as function of the electron dose, the detection angle, and the sample configuration. It was found that the spatial resolution scales with the electron dose to the -1/4th power. Gold- and carbon nanoparticles were examined in the middle of water layers ranging from 0.01--10 µm thickness representing relevant classes of experiments in both materials science and biology. The optimal microscope settings differ between experimental configurations. STEM performs the best for gold nanoparticles for all layer thicknesses, while carbon is best imaged with phase-contrast TEM for thin layers but bright field STEM is preferred for thicker layers. The resolution was also calculated for a water layer enclosed between thin membranes. The influence of chromatic aberration correction for TEM was examined as well. The theory is broadly applicable to other types of materials and sample configurations. Copyright © 2018 Elsevier B.V. All rights reserved.

Properties of Cathodoluminescence for Cryogenic Applications of SiO2-based Space Observatory Optics and Coatings

NASA Technical Reports Server (NTRS)

Evans, Amberly; Dennison, J.R.; Wilson, Gregory; Dekany, Justin; Bowers Charles W.; Meloy, Robert; Heaney, James B.

2013-01-01

Disordered thin film SiO2SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high-energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (60-200 nm) SiO2SiOx optical coatings on reflective metal substrates over a range of sample temperatures (40-400 K) and emission wavelengths (260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UVVISNIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

A concept for Z-dependent microbunching measurements with coherent X-ray transition radiation in a sase FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumpkin, A.H.; Fawley, W.M.; Rule, D.W.

We present an adaptation of the measurements performed in the visible-to-VUV regime of the z-dependent microbunching in a self-amplified spontaneous emission (SASE) free-electron laser (FEL). In these experiments a thin metal foil was used to block the more intense SASE radiation and to generate coherent optical transition radiation (COTR) as one source in a two-foil interferometer. However, for the proposed x-ray SASE FELs, the intense SASE emission is either too strongly transmitted at 1.5 Angstrom or the needed foil thickness for blocking scatters the electron beam too much. Since x-ray transition radiation (XTR) is emitted in an annulus with openingmore » angle 1/g = 36 mrad for 14.09-GeV electrons, we propose using a thin foil or foil stack to generate the XTR and coherent XTR (CXTR) and an annular crystal to wavelength sort the radiation. The combined selectivity in angle and wavelength will favor the CXTR over SASE by about eight orders of magnitude. Time-dependent GINGER simulations support the z-dependent gain evaluation plan.« less

The effects of secondary emission on the sheath structure in an electrostatic dusty plasma containing energetic electrons and charged nanoparticles

NASA Astrophysics Data System (ADS)

Jalilpour, P.; Foroutan, G.

2018-03-01

Multi-fluid numerical simulations are utilized to explore the effects of secondary emission by nanosize dust particles on the structure of a dusty plasma sheath in the presence of a beam of fast, mono-energetic electrons. It was found that the sheath dynamics depends strongly on the magnitude of the secondary emission yield δm. For δm smaller than unity, the secondary emission is weak, and the sheath width always increases with increasing beam flux, such that it experiences a sharp transition from the regime of thin sheath to the regime of thick sheath, at a given beam flux. For δm larger than unity, the secondary emission dominates the dust dynamics, and the sheath width always decreases with increasing beam flux. The sheath thickness decreases very quickly with the secondary emission yield, but increases with Em, the characteristic energy corresponding to the maximum secondary emission. As δm is increased, the absolute dust charge and hence the accelerating ion drag force are reduced. Then, the dust is decelerated and as a result the dust number density is enhanced. Increasing the dust radius and/or the dust number density leads to an enhanced secondary emission effect and thus to a narrower sheath width.

Tailoring the thermal conductivity of the powder bed in Electron Beam Melting (EBM) Additive Manufacturing.

PubMed

Smith, C J; Tammas-Williams, S; Hernandez-Nava, E; Todd, I

2017-09-05

Metallic powder bed additive manufacturing is capable of producing complex, functional parts by repeatedly depositing thin layers of powder particles atop of each other whilst selectively melting the corresponding part cross-section into each layer. A weakness with this approach arises when melting overhanging features, which have no prior melted material directly beneath them. This is due to the lower thermal conductivity of the powder relative to solid material, which as a result leads to an accumulation of heat and thus distortion. The Electron Beam Melting (EBM) process alleviates this to some extent as the powder must first be sintered (by the beam itself) before it is melted, which results in the added benefit of increasing the thermal conductivity. This study thus sought to investigate to what extent the thermal conductivity of local regions in a titanium Ti-6Al-4V powder bed could be varied by imparting more energy from the beam. Thermal diffusivity and density measurements were taken of the resulting sintered samples, which ranged from being loosely to very well consolidated. It was found that the calculated thermal conductivity at two temperatures, 40 and 730 °C, was more than doubled over the range of input energies explored.

Removing Contamination-Induced Reconstruction Artifacts from Cryo-electron Tomograms

PubMed Central

Fernandez, Jose-Jesus; Laugks, Ulrike; Schaffer, Miroslava; Bäuerlein, Felix J.B.; Khoshouei, Maryam; Baumeister, Wolfgang; Lucic, Vladan

2016-01-01

Imaging of fully hydrated, vitrified biological samples by electron tomography yields structural information about cellular protein complexes in situ. Here we present a computational procedure that removes artifacts of three-dimensional reconstruction caused by contamination present in samples during imaging by electron microscopy. Applying the procedure to phantom data and electron tomograms of cellular samples significantly improved the resolution and the interpretability of tomograms. Artifacts caused by surface contamination associated with thinning by focused ion beam, as well as those arising from gold fiducial markers and from common, lower contrast contamination, could be removed. Our procedure is widely applicable and is especially suited for applications that strive to reach a higher resolution and involve the use of recently developed, state-of-the-art instrumentation. PMID:26743046

Nanobelt formation of magnesium hydroxide sulfate hydrate via a soft chemistry process.

PubMed

Zhou, Zhengzhi; Sun, Qunhui; Hu, Zeshan; Deng, Yulin

2006-07-13

The nanobelt formation of magnesium hydroxide sulfate hydrate (MHSH) via a soft chemistry approach using carbonate salt and magnesium sulfate as reactants was successfully demonstrated. X-ray diffraction (XRD), energy dispersion X-ray spectra (EDS), selected area electron diffraction (SAED), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) analysis revealed that the MHSH nanobelts possessed a thin belt structure (approximately 50 nm in thickness) and a rectangular cross profile (approximately 200 nm in width). The MHSH nanobelts suffered decomposition under electron beam irradiation during TEM observation and formed MgO with the pristine nanobelt morphology preserved. The formation process of the MHSH nanobelts was studied by tracking the morphology of the MHSH nanobelts during the reaction. A possible chemical reaction mechanism is proposed.

Thin film absorption characterization by focus error thermal lensing

NASA Astrophysics Data System (ADS)

Domené, Esteban A.; Schiltz, Drew; Patel, Dinesh; Day, Travis; Jankowska, E.; Martínez, Oscar E.; Rocca, Jorge J.; Menoni, Carmen S.

2017-12-01

A simple, highly sensitive technique for measuring absorbed power in thin film dielectrics based on thermal lensing is demonstrated. Absorption of an amplitude modulated or pulsed incident pump beam by a thin film acts as a heat source that induces thermal lensing in the substrate. A second continuous wave collimated probe beam defocuses after passing through the sample. Determination of absorption is achieved by quantifying the change of the probe beam profile at the focal plane using a four-quadrant detector and cylindrical lenses to generate a focus error signal. This signal is inherently insensitive to deflection, which removes noise contribution from point beam stability. A linear dependence of the focus error signal on the absorbed power is shown for a dynamic range of over 105. This technique was used to measure absorption loss in dielectric thin films deposited on fused silica substrates. In pulsed configuration, a single shot sensitivity of about 20 ppm is demonstrated, providing a unique technique for the characterization of moving targets as found in thin film growth instrumentation.

Reconstruction of the 3-D Shape and Crystal Preferred Orientation of Olivine: A Combined X-ray µ-CT and EBSD-SEM approach

NASA Astrophysics Data System (ADS)

Kahl, Wolf-Achim; Hidas, Károly; Dilissen, Nicole; Garrido, Carlos J.; López-Sánchez Vizcaíno, Vicente; Jesús Román-Alpiste, Manuel

2017-04-01

The complete reconstruction of the microstructure of rocks requires, among others, a full description of the shape preferred orientation (SPO) and crystal preferred orientation (CPO) of the constituent mineral phases. New advances in instrumental analyses, particularly electron backscatter diffraction (EBSD) coupled to focused ion beam-scanning electron microscope (FIB-SEM), allows a complete characterization of SPO and CPO in rocks at the micron scale [1-2]. Unfortunately, the large grain size of many crystalline rocks, such as peridotite, prevents a representative characterization of the CPO and SPO of their constituent minerals by this technique. Here, we present a new approach combining X-ray micro computed tomography (µ-CT) and EBSD to reconstruct the geographically oriented, 3-D SPO and CPO of cm- to mm-sized olivine crystals in two contrasting fabric types of chlorite harzburgites (Almírez ultramafic massif, SE Spain). The semi-destructive sample treatment involves drilling of geographically oriented micro drills in the field and preparation of oriented thin sections from µ-CT scanned cores. This allows for establishing the link among geological structures, macrostructure, fabric, and 3-D SPO-CPO at the thin section scale. Based on EBSD analyses, different CPO groups of olivine crystals can be discriminated in the thin sections and allocated to 3-D SPO in the µ-CT volume data. This approach overcomes the limitations of both methods (i.e., no crystal orientation data in µ-CT and no spatial information in EBSD), hence 3-D orientation of the crystallographic axes of olivines from different orientation groups could be correlated with the crystal shapes of olivine grains. This combined µ-CT and EBSD technique enables the correlation of both SPO and CPO and representative grain size, and is capable to characterize the 3-D microstructure of olivine-bearing rocks at the hand specimen scale. REFERENCES 1. Zaefferer, S., Wright, S.I., Raabe, D., 2008. Three-Dimensional orientation microscopy in a focused ion beam-scanning electron microscope: A new dimension of microstructure characterization. Metallurgical and Materials Transactions A 39, 374-389. 2. Burnett, T.L., Kelley, R., Winiarski, B., Contreras, L., Daly, M., Gholinia, A., Burke, M.G., Withers, P.J., 2016. Large volume serial section tomography by Xe Plasma FIB dual beam microscopy. Ultramicroscopy 161, 119-129.

Activating "Invisible" Glue: Using Electron Beam for Enhancement of Interfacial Properties of Graphene-Metal Contact.

PubMed

Kim, Songkil; Russell, Michael; Kulkarni, Dhaval D; Henry, Mathias; Kim, Steve; Naik, Rajesh R; Voevodin, Andrey A; Jang, Seung Soon; Tsukruk, Vladimir V; Fedorov, Andrei G

2016-01-26

Interfacial contact of two-dimensional graphene with three-dimensional metal electrodes is crucial to engineering high-performance graphene-based nanodevices with superior performance. Here, we report on the development of a rapid "nanowelding" method for enhancing properties of interface to graphene buried under metal electrodes using a focused electron beam induced deposition (FEBID). High energy electron irradiation activates two-dimensional graphene structure by generation of structural defects at the interface to metal contacts with subsequent strong bonding via FEBID of an atomically thin graphitic interlayer formed by low energy secondary electron-assisted dissociation of entrapped hydrocarbon contaminants. Comprehensive investigation is conducted to demonstrate formation of the FEBID graphitic interlayer and its impact on contact properties of graphene devices achieved via strong electromechanical coupling at graphene-metal interfaces. Reduction of the device electrical resistance by ∼50% at a Dirac point and by ∼30% at the gate voltage far from the Dirac point is obtained with concurrent improvement in thermomechanical reliability of the contact interface. Importantly, the process is rapid and has an excellent insertion potential into a conventional fabrication workflow of graphene-based nanodevices through single-step postprocessing modification of interfacial properties at the buried heterogeneous contact.

New Developments in Cathodoluminescence Spectroscopy for the Study of Luminescent Materials

PubMed Central

den Engelsen, Daniel; Fern, George R.; Harris, Paul G.; Ireland, Terry G.; Silver, Jack

2017-01-01

Herein, we describe three advanced techniques for cathodoluminescence (CL) spectroscopy that have recently been developed in our laboratories. The first is a new method to accurately determine the CL-efficiency of thin layers of phosphor powders. When a wide band phosphor with a band gap (Eg > 5 eV) is bombarded with electrons, charging of the phosphor particles will occur, which eventually leads to erroneous results in the determination of the luminous efficacy. To overcome this problem of charging, a comparison method has been developed, which enables accurate measurement of the current density of the electron beam. The study of CL from phosphor specimens in a scanning electron microscope (SEM) is the second subject to be treated. A detailed description of a measuring method to determine the overall decay time of single phosphor crystals in a SEM without beam blanking is presented. The third technique is based on the unique combination of microscopy and spectrometry in the transmission electron microscope (TEM) of Brunel University London (UK). This combination enables the recording of CL-spectra of nanometre-sized specimens and determining spatial variations in CL emission across individual particles by superimposing the scanning TEM and CL-images. PMID:28772671

Homogeneous Nanodiamonds Are Different in Reality

NASA Astrophysics Data System (ADS)

Wu, Chi-Chin; Gottfried, Jennifer; Pesce-Rodriguez, Rose; Advanced Energetic Materials Team

Commercial detonation nanodiamonds (ND) have been investigated for many applications. They consist of carbon nanoparticles with diamond cores surrounded by onion-like graphitic shells. Unfortunately, variations in the purity and carbon structure between commercial ND samples due to variations in synthesis and purification conditions is an ongoing issue, since these differences can affect the resulting application-dependent ND behavior. Via characterization with transmission electron microscopy, this work investigates the structural and chemical differences among nominally homologous commercial detonation ND sold by a single vendor under the same item number. Significant discrepancies in the carbon structure and crystallinity between different batches with similar sizes and shapes were identified. The ND containing more non-carbon entities as impurities and oxygen-containing surface functional groups were found to possess thicker graphitic shells surrounding an unstable diamond core which quickly transforms to graphite under electron beam irradiation. However, the structure of ND with higher purities and thin onion shells remain unchanged over extended exposure to electron beams. This study demonstrates the structural and chemical differences between nominally identical commercial detonation ND samples and reveals their influence on the decomposition behavior of the particles.

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

PubMed Central

Depond, Philip J

2018-01-01

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials. PMID:29765806

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate.

PubMed

Martin, Aiden A; Depond, Philip J

2018-01-01

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.

Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

NASA Astrophysics Data System (ADS)

Lam, N. Q.; Okamoto, P. R.

1984-05-01

The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. Damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions.

GHz laser-free time-resolved transmission electron microscopy: A stroboscopic high-duty-cycle method.

PubMed

Qiu, Jiaqi; Ha, Gwanghui; Jing, Chunguang; Baryshev, Sergey V; Reed, Bryan W; Lau, June W; Zhu, Yimei

2016-02-01

A device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second electron pulse sequences (pulse trains) at >1GHz repetition rates, as well as controllably manipulates the resulting pulses. Ultimately, it leads to negligible electron pulse phase-space degradation compared to the incoming dc beam parameters. The temporal pulse length and repetition rate for the EMMP can be continuously tunable over wide ranges. Applying the EMMP to a transmission electron microscope (TEM) with any dc electron source (e.g. thermionic, Schottky, or field-emission source), a GHz stroboscopic high-duty-cycle TEM can be realized. Unlike in many recent developments in time-resolved TEM that rely on a sample pumping laser paired with a laser launching electrons from a photocathode to probe the sample, there is no laser in the presented experimental set-up. This is expected to be a significant relief for electron microscopists who are not familiar with laser systems. The EMMP and the sample are externally driven by a radiofrequency (RF) source synchronized through a delay line. With no laser pumping the sample, the problem of the pump laser induced residual heating/damaging the sample is eliminated. As many RF-driven processes can be cycled indefinitely, sampling rates of 1-50GHz become accessible. Such a GHz stroboscopic TEM would open up a new paradigm for in situ and in operando experiments to study samples externally driven electromagnetically. Complementary to the lower (MHz) repetition rates experiments enabled by laser photocathode TEM, new experiments in the multi-GHz regime will be enabled by the proposed RF design. Because TEM is also a platform for various analytical methods, there are infinite application opportunities in energy and electronics to resolve charge (electronic and ionic) transport, and magnetic, plasmonic and excitonic dynamics in advanced functional materials. In addition, because the beam duty-cycle can be as high as ~10(-1) (or 10%), detection can be accomplished by commercially available detectors. In this article, we report an optimal design of the EMMP. The optimal design was found using an analytical generalized matrix approach in the thin lens approximation along with detailed beam dynamics taking actual realistic dc beam parameters in a TEM operating at 200keV. Copyright © 2015 Elsevier B.V. All rights reserved.

Determining shear modulus of thin wood composite materials using a cantilever beam vibration method

Treesearch

Cheng Guan; Houjiang Zhang; John F. Hunt; Haicheng Yan

2016-01-01

Shear modulus (G) of thin wood composite materials is one of several important indicators that characterizes mechanical properties. However, there is not an easy method to obtain this value. This study presents the use of a newly developed cantilever beam free vibration test apparatus to detect in-plane G of thin wood composite...

Flexural-torsional vibration of a tapered C-section beam

NASA Astrophysics Data System (ADS)

Dennis, Scott T.; Jones, Keith W.

2017-04-01

Previous studies have shown that numerical models of tapered thin-walled C-section beams based on a stepped or piecewise prismatic beam approximation are inaccurate regardless of the number of elements assumed in the discretization. Andrade recently addressed this problem by extending Vlasov beam theory to a tapered geometry resulting in new terms that vanish for the uniform beam. (See One-Dimensional Models for the Spatial Behaviour of Tapered Thin-Walled Bars with Open Cross-Sections: Static, Dynamic and Buckling Analyses, PhD Thesis, University of Coimbra, Portugal, 2012, https://estudogeral.sib.uc.pt) In this paper, we model the coupled bending-twisting vibration of a cantilevered tapered thin-walled C-section using a Galerkin approximation of Andrade's beam equations resulting in an 8-degree-of-freedom beam element. Experimental natural frequencies and mode shapes for 3 prismatic and 2 tapered channel beams are compared to model predictions. In addition, comparisons are made to detailed shell finite element models and exact solutions for the uniform beams to confirm the validity of the approach. Comparisons to the incorrect stepped model are also presented.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nomenyo, K.; Kostcheev, S.; Lérondel, G.

2014-05-05

Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguidingmore » is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.« less

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography.

PubMed

Rananavare, Shankar B; Morakinyo, Moshood K

2017-02-12

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has been attributed to statistical fluctuations in the number of photons/electrons arriving at a given nano-region arising from shot-noise (SN). The SN varies inversely to the square root of a number of photons/electrons. For a fixed dosage, the SN is larger in EUV and E-beam lithographies than for traditional (193 nm) optical lithography. Bottom-up and top-down patterning approaches are combined to minimize the effects of shot noise in nano-hole patterning. Specifically, an amino-silane surfactant self-assembles on a silicon wafer that is subsequently spin-coated with a 100 nm film of a PMMA-based E-beam photoresist. Exposure to the E-beam and the subsequent development uncover the underlying surfactant film at the bottoms of the holes. Dipping the wafer in a suspension of negatively charged, citrate-capped, 20 nm gold nanoparticles (GNP) deposits one particle per hole. The exposed positively charged surfactant film in the hole electrostatically funnels the negatively charged nanoparticle to the center of an exposed hole, which permanently fixes the positional registry. Next, by heating near the glass transition temperature of the photoresist polymer, the photoresist film reflows and engulfs the nanoparticles. This process erases the holes affected by SN but leaves the deposited GNPs locked in place by strong electrostatic binding. Treatment with oxygen plasma exposes the GNPs by etching a thin layer of the photoresist. Wet-etching the exposed GNPs with a solution of I2/KI yields uniform holes located at the center of indentations patterned by E-beam lithography. The experiments presented show that the approach reduces the variation in the size of the holes caused by SN from 35% to below 10%. The method extends the patterning limits of transistor contact holes to below 20 nm.

Ultrastructural characterization of tooth-biomaterial interfaces prepared with broad and focused ion beams.

PubMed

Coutinho, E; Jarmar, T; Svahn, F; Neves, A A; Verlinden, B; Van Meerbeek, B; Engqvist, H

2009-11-01

Current available techniques for transmission electron microscopy (TEM) of tooth-biomaterial interfaces are mostly ineffective for brittle phases and impair integrated chemical and morphological characterization. The aims of this study were (1) to determine the applicability of new focused ion beam (FIB) and broad ion beam (BIB) techniques for TEM preparation of tooth-biomaterial interfaces; (2) to characterize the interfacial interaction with enamel and dentin of a conventional glass-ionomer (Chemfil Superior, DeTrey Dentsply, Germany), a 2-step self-etch (Clearfil SE, Kuraray, Japan) and a 3-step etch-and-rinse (OptiBond FL, Kerr, USA) adhesives; and (3) to characterize clinically relevant interfaces obtained from actual Class-I cavities. After bonding to freshly extracted human third molars, non-demineralized and non-stained sections were obtained using the FIB/BIB techniques and examined under TEM. The main structures generally disclosed in conventional ultramicrotomy samples were recognized in FIB/BIB-based ones. There were not any major differences between FIB and BIB concerning the resulting ultrastructural morphology. FIB/BIB-sections enabled to clearly resolve sub-micron hydroxyapatite crystals on top of hard tissues and the interface between matrix and filler in all materials, even at nano-scale. Some investigated interfaces disclosed areas with a distinct "fog" or "melted look", which is probably an artifact due to surface damage caused by the high-energy beam. Interfaces with enamel clearly disclosed the distinct "keyhole" shape of enamel rods sectioned at 90 degrees , delimited by a thin electron-lucent layer of inter-rod enamel. At regions where enamel crystals ran parallel with the interface, we observed a lack of interaction and some de-bonding along with interfacial void formation. The FIB/BIB methods are viable and reliable alternatives to conventional ultramicrotomy for preparation of thin sections of brittle and thus difficult to cut biomaterial-hard tissue interfaces. They disclose additional ultrastructural information about both substrates and are more suitable for advanced analytic procedures.

Growth and Structure of High-Temperature Superconducting Thin Films

NASA Astrophysics Data System (ADS)

Achutharaman, Vedapuram Sankar

High temperature superconducting thin films with atomic scale perfection are required for technological applications and scientific studies on the mechanism of superconductivity. Ozone assisted molecular beam epitaxy (MBE) has been shown to produce in-situ superconducting thin films. To obtain a well-controlled and reproducible process, some components such as the substrate heater and the substrate holder have to be designed to be compatible with high oxygen partial pressures. Also, to ensure precise stoichiometry and precipitate-free films, evaporation sources and temperature controllers have to be designed for better temperature stability. The investigation of the MBE process and the thin films grown by MBE are required to obtain a better understanding of the growth parameters such as the composition of the film, substrate surface structure, substrate temperature and ozone partial pressure. This can be obtained by dynamically monitoring the growth process by in-situ characterization techniques such as reflection high energy electron diffraction (RHEED). Intensity oscillations of the specular RHEED beam have been observed during the growth of RBa_2Cu_3 O_7 (R = Y,Dy) films on SrTiO _3. A model for the origin of these RHEED intensity oscillations will be proposed from extensive RHEED intensity studies. A mechanism for growth of these oxides by physical vapor deposition techniques such as MBE and pulsed laser deposition will also be developed. To verify both the models, the growth of the superconductors will be simulated by the Monte Carlo method and compared with experimental RHEED observations.

Design and fabrication of thin-film polarizer at wavelength of 1540 nm and investigation of its laser-induced damage threshold

NASA Astrophysics Data System (ADS)

Sahraee, Masoume; Fallah, Hamid Reza; Moradi, Badri; Zabolian, Hosein; Mahmoodzade, Morteza Haji

2014-12-01

In this paper a thin-film polarizer at a wavelength of 1540 nm was designed and fabricated. These types of polarizer are usually used in laser systems to obtain linearly polarized light beams. Our design consists of a system of eighteen dielectric thin-film layers from repeated pairs of titanium dioxide and silicon dioxide layers that are deposited on a BK7 glass substrate. Design was carried out based on theoretical principles and computer calculations. Thin-film design software was used for designing the polarizer. The angle of incidence was supposed to be 56° that is the Browster angle for BK7 glass. Performance and laser-induced damage threshold of the polarizer were enhanced by a suitable selection of various parameters including thickness of each layer, their number and the electric field distribution of layers. After several designs, fabrications and refinement of parameters, the final polarizer was designed. Then the final sample of the polarizer was prepared using the electron beam evaporation (EBE) technique with Balzers BAK 760 coating machine. Spectral transmittance of the sample was measured by Shimadzu 3100 UV-VIS-NIR spectrophotometer. Investigation of spectral transmittance showed that at a wavelength of 1540nm, the transmission of P polarization is 87.82 and the transmission of S polarization is 0.43 which show a ratio ( T P / T S of 204. So, this ratio is an acceptable value for our desired polarizer.

Compact x-ray source and panel

DOEpatents

Sampayon, Stephen E [Manteca, CA

2008-02-12

A compact, self-contained x-ray source, and a compact x-ray source panel having a plurality of such x-ray sources arranged in a preferably broad-area pixelized array. Each x-ray source includes an electron source for producing an electron beam, an x-ray conversion target, and a multilayer insulator separating the electron source and the x-ray conversion target from each other. The multi-layer insulator preferably has a cylindrical configuration with a plurality of alternating insulator and conductor layers surrounding an acceleration channel leading from the electron source to the x-ray conversion target. A power source is connected to each x-ray source of the array to produce an accelerating gradient between the electron source and x-ray conversion target in any one or more of the x-ray sources independent of other x-ray sources in the array, so as to accelerate an electron beam towards the x-ray conversion target. The multilayer insulator enables relatively short separation distances between the electron source and the x-ray conversion target so that a thin panel is possible for compactness. This is due to the ability of the plurality of alternating insulator and conductor layers of the multilayer insulators to resist surface flashover when sufficiently high acceleration energies necessary for x-ray generation are supplied by the power source to the x-ray sources.

Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

NASA Astrophysics Data System (ADS)

Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

2016-09-01

Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

Electronic excitation induced modifications of structural, electrical and optical properties of Cu-C60 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Inani, H.; Singhal, R.; Sharma, P.; Vishnoi, R.; Ojha, S.; Chand, S.; Sharma, G. D.

2017-09-01

High energy ion irradiation significantly affects the size and shape of nanoparticles in composites. Low concentration metal fraction embedded in fullerene matrix in form of nanocomposites was synthesized by thermal co-evaporation method. Swift heavy ion irradiation was performed with 120 MeV Au ion beam on Cu-C60 nanocomposites at different fluences 1 × 1012, 3 × 1012, 6 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Absorption spectra demonstrated that absorption intensity of nanocomposite thin film was increased whereas absorption modes of fullerene C60 were diminished with fluence. Rutherford backscattering spectroscopy was also performed to estimate the thickness of the film and atomic metal fraction in matrix and found to be 45 nm and 3%, respectively. Transmission electron microscopy was performed for structural and particle size evaluation of Cu nanoparticles (NPs) in fullerene C60 matrix. A growth of Cu nanoparticles is observed at a fluence of 3 × 1013 ions/cm2 with a bi-modal distribution in fullerene C60. Structural evolution of fullerene C60 matrix with increasing fluence of 120 MeV Au ion beam is studied by Raman spectroscopy which shows the amorphization of matrix (fullerene C60) at lower fluence. The growth of Cu nanoparticles is explained using the phenomena of Ostwald ripening.

Vibrational behavior of adaptive aircraft wing structures modelled as composite thin-walled beams

NASA Technical Reports Server (NTRS)

Song, O.; Librescu, L.; Rogers, C. A.

1992-01-01

The vibrational behavior of cantilevered aircraft wings modeled as thin-walled beams and incorporating piezoelectric effects is studied. Based on the converse piezoelectric effect, the system of piezoelectric actuators conveniently located on the wing yield the control of its associated vertical and lateral bending eigenfrequencies. The possibility revealed by this study enabling one to increase adaptively the eigenfrequencies of thin-walled cantilevered beams could play a significant role in the control of the dynamic response and flutter of wing and rotor blade structures.

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

NASA Astrophysics Data System (ADS)

Chang, C. W.; Wadekar, P. V.; Guo, S. S.; Cheng, Y. J.; Chou, M.; Huang, H. C.; Hsieh, W. C.; Lai, W. C.; Chen, Q. Y.; Tu, L. W.

2018-01-01

For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar m-plane gallium nitride ( m-GaN) thin films are studied. The samples were grown using plasma-assisted molecular beam epitaxy on m-plane sapphire substrates. Growth of pure m-GaN thin films, concomitant with smooth surfaces is possible at low radio frequency powers and high growth temperatures as judged by the high resolution x-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Defect types and densities are quantified using transmission electron microscopy, while Raman spectroscopy was used to analyze the in-plane stress in the thin films which matches the lattice mismatch analysis. Energy dispersive spectroscopy and cathodoluminescence support a congruent growth and a dominant near band edge emission. From the analysis, a narrow growth window is discovered wherein epitaxial growth of pure m-plane GaN samples free of secondary phases with narrow rocking curves and considerable smooth surfaces are successfully demonstrated.

Rotation of a 1-GeV particle beam by a fan system of thin crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britvich, G. I.; Maisheev, V. A.; Chesnokov, Yu. A., E-mail: Yury.Chesnokov@ihep.ru

2016-10-15

The deflection of a 1-GeV charged particle beam by a system formed by fan-oriented thin silicon wafers has been studied theoretically and experimentally. Software has been developed for numerical simulation of a particle beam transmission through a fan crystal system. In the U-70 experiment on a proton beam, the particles were deflected by such a system through an angle exceeding 1 mrad. Thus, a new method has been demonstrated for rotating a particle beam, which can be used for creating accelerator beams for medical purposes.

Studies of an extractor geometry magnetically insulated ion diode with an exploding metal film anode plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rondeau, G.D.

1989-01-01

Magnetically insulated diodes (MIDs) are of interest as ion sources for inertial confinement fusion. The authors examined several issues that are of concern with MIDs, including ion turn-on delay and anode plasma production, and diode impedance history and particle current scaling with the applied magnetic field and gas spacing. The LION pulsed power generator (1.5 MV, 4 {Omega}, 40 ns pulse length) was used to power an extractor geometry magnetically insulated (radical magnetic field) ion beam diode. The diode was studied with three anode configurations. In the first, with epoxy-filled-groove (epoxy) anodes, scaling of the ion and electron currents withmore » the gap and the magnetic field was examined. He found that the observed ion current is consistent with a diode model that has been successful with barrel geometry MIDs. The electron leakage current scaled proportionally to 1/Bd{sup 2}, where d is the anode-cathode gap spacing and B is the magnetic field strength. Studies of ion beam propagation in vacuum showed that space charge non-neutrality near the magnetic field coils caused the beam to expand initially. Later in the ion pulse (20 to 30 ns), the beam expansion became much less severe. The second anode configuration utilized an electron collector protruding above an epoxy anode surface. With the collector, he observed less bremsstrahlung across the active anode region. The last anode configuration studied was the exploding metal film active anode plasma source (EMFAAPS). Current from the accelerator was directed by an electron collector or a plasma opening switch through a thin aluminum film, which exploded to form the anode plasma.« less

Tensile testing of thin-film microstructures

NASA Astrophysics Data System (ADS)

Greek, Staffan; Johansson, Stefan A. I.

1997-09-01

The mechanical properties of thin film microstructures depend on size and shape and on the film manufacturing process. Hence, the test structures that are used to measure mechanical properties should have dimensions of the same order of magnitude as an application structure. The microstructures are easily monitored in a scanning electron microscope (SEM), but to be handled and tested in situ a micromanipulator was developed. The parts of the micromanipulator essential to the tests are two independently moveable tables driven by electric motors. The test structures and a testing unit are mounted on the tables. A testing unit was designed to measure force and displacement with high resolution. The testing unit consists of an arm actuated by a piezoelectric element and equipped with a probe. An optical encoder measures the movement of the arm, while strain gauges measure the force in the arm. Test structures consist typically of a released beam fixed at one end with a ring at the other. The micromanipulator is used to position the probe of the testing unit in the ring. The testing unit then executed a tensile test of the beam. Test structures of polysilicon films produced under various process conditions were used to verify the possibility of measuring Young's modulus with an accuracy of +/- 5 percent, as well as fracture strength.Young's modulus is calculated using the difference in elongation for different beam lengths. The fracture strength of the beams was evaluated with Weibull statistics.

Processing And Patterning Of Thin Film Superconductors Formed By Metallo-Organic Deposition

NASA Astrophysics Data System (ADS)

Micheli, Adolph L.; Mantese, Joseph V.; Hamdi, Aboud H.

1990-04-01

Thin film superconductors of Y-Ba-Cu and Yb-Ba-Cu were formed by the pyrolysis of neodecanoate solutions of Y, Yb, Ba and Cu which had been deposited onto <100> SrTiO3 substrates [1]. Rapid thermal annealing, in oxygen, of the as-deposited films produced high T films having superconducting onset temperatures above 90 K and zero resistance at 8g K. Scanning Electron Microscopy (SEM) revealed enhancements in grain growth, compared to furnace annealed films, by a factor of 4. X-ray diffraction analysis showed preferred epitaxial grain growth with the c-axis of the films oriented both perpendicular and parallel to the substrate surface. Separate Rutherford Backscattering Spectrometry (RBS) channeling experiments confirmed the formation of preferred epitaxial grain growth. Film composition was determined by RBS and Inductively Coupled Plasma Emission Spectrometry (ICPES). Selective patterning was accomplished by focused beam exposure of the metal neodecanoate films [2-4]. The exposure rendered the neodecanoate film locally insoluble in xylene, thus permitting selective area patterning prior to pyrolysis. Electron, ion and laser beams were used to pattern films on <100> SrTiO3. The finest lines, approximately 5 #m in width and 26 nm thick, were patterned using electron beams whose lines had superconducting onsets above 90 K and zero resistance at 69 K after rapid thermal annealing. Both ion beam and laser patterning had similar superconducting onsets and zero resistance. Neodecanoates of Y, Yb, Ba, and Cu were formed, as previously described [5], by reacting the metal acetates of these materials with either ammonium neodecanoate or tetramethyl ammonium neodecanoate. The carboxylates formed from these reactions were then dissolved in a solution of xylene and pyridine. The individual chemical constituents were combined to produce solutions, Ln:Ba:Cu, in the ratio 1:2:4. Here, Ln is a rare-earth element. Details of the preparation of the metal carboxylates may be found elsewhere [6]. Thin films of Y-Ba-Cu and Yb-Ba-Cu were deposited onto <100> SrTiO by flooding the substrates with the appropriate neodecanoate solutions, then spin drying them at 2000 rpm for 30 s. The substrates were heated rapidly to 500?°C for 5 min in an air oven to pyrolize the metallo organics to their oxides. This process produces thin films about 200 nm thick. The spin coating process was repeated 3-6 times if thicker films were desired. X-ray diffraction analysis of films pyrolized at 500?°C shoed the presence of only microcrystallites. Room temperature resistivities of lx10 0-cm were measured for these films. No superconducting behavior was observed. After the 500?°C pyrolysis the films were further processed by RTA in flowing oxygen. The substrates were placed upon oxidized silicon wafers, rapidly heated to 850?°C for 60 s using infrared radiation produced by a bank of quartz lamps then allowed to cool to room temperature. A second rapid annealing was then performed at 920?°C for 30 s in oxygen. Thin film superconductors formed in the manner described above were very uniform in structure and thickness across the surface of the film. The grains are approximately 1 #m wide and 2 #m long, a factor of 4 larger than the grains found in furnace annealed films formed by MOD [5].

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Biaxial thin-film coated-plate polarizing beam splitters.

PubMed

Hodgkinson, Ian; Wu, Qi Hong; Arnold, Matthew; De Silva, Lakshman; Beydaghyan, Gisia; Kaminska, Kate; Robbie, Kevin

2006-03-01

We present a design for a biaxial thin-film coated-plate polarizing beam splitter that transmits the p-polarized component of a beam of light without change of direction and reflects the s-polarized component. The beam splitter has a periodic structure and is planned for fabrication by serial bideposition in mutually orthogonal planes. Recent experimental data for form-birefringent silicon is used to establish the feasibility of the design for a beam splitter to be used at 1310 nm and at an angle of 45 degrees in air.

Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

NASA Astrophysics Data System (ADS)

Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

2016-11-01

Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

Atomic-scale thermocapillary flow in focused ion beam milling

NASA Astrophysics Data System (ADS)

Das, Kallol; Johnson, Harley; Freund, Jonathan

2016-11-01

Focused ion beams (FIB) offer an attractive tool for nanometer-scale manufacturing and material processing, particularly because they can be focused to a few nanometer diameter spot. This motivates their use for many applications, such as sample preparation for transmission electron microscopy (TEM), forming nanometer scale pores in thin films for DNA sequencing. Despite its widespread use, the specific mechanisms of FIB milling, especially at high ion fluxes for which significant phase change might occur, remains incompletely understood. Here we investigate the process of nanopore fabrication in thin Si films using molecular dynamics simulation where Ga+ ions are used as the focused ions. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it is driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A continuum flow model with Marangoni forcing reproduces the flow.

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

NASA Astrophysics Data System (ADS)

Trindade, I. G.; Leitão, D.; Fermento, R.; Pogorelev, Y.; Sousa, J. B.

2009-08-01

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co 85Fe 15 and Ni 81Fe 19 thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni 81Fe 19 films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

Improvement of laser molecular beam epitaxy grown SrTiO3 thin film properties by temperature gradient modulation growth

NASA Astrophysics Data System (ADS)

Li, Jin Long; Hao, J. H.; Li, Y. R.

2007-09-01

Oxygen diffusion at the SrTiO3/Si interface was analyzed. A method called temperature gradient modulation growth was introduced to control oxygen diffusion at the interface of SrTiO3/Si. Nanoscale multilayers were grown at different temperatures at the initial growing stage of films. Continuous growth of SrTiO3 films was followed to deposit on the grown sacrificial layers. The interface and crystallinity of SrTiO3/Si were investigated by in situ reflection high energy electron diffraction and x-ray diffraction measurements. It has been shown that the modulated multilayers may help suppress the interfacial diffusion, and therefore improve SrTiO3 thin film properties.

Synthesis of nanodimensional TiO2 thin films.

PubMed

Thakurdesai, Madhavi; Mohanty, T; John, J; Rao, T K Gundu; Raychaudhuri, Pratap; Bhattacharyya, V; Kanjilal, D

2008-08-01

Nanodimensional TiO2 has wide application in the field of photocatalysis, photovoltaic and photochromic devices. In present investigation TiO2 thin films deposited by pulsed laser deposition method are irradiated by 100 MeV Ag ion beam to achieve growth of nanophases. The nanostructure evolution is characterized by atomic force microscopy (AFM). The phases of TiO2 formed after irradiation are identified by glancing angle X-ray diffraction and Raman spectroscopy. The particle radius estimated by AFM varies from 10-13 nm. Anatase phase of TiO2 is formed after irradiation. The blue shift observed in UV-VIS absorption spectra indicates the nanostructure formation. The shape and size of nanoparticles formed due to high electronic excitation depend upon thickness of the film.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

High Power Laser Welding. [of stainless steel and titanium alloy structures

NASA Technical Reports Server (NTRS)

Banas, C. M.

1972-01-01

A review of recent developments in high power, carbon dixoide laser welding is presented. Deep penetration welding in stainless steel to 0.5-in. thick, high speed welding in thin gage rimmed steel and gas shielded welding in Ti-6Al-4V alloy are described. The effects of laser power, power density, focusing optics, gas-shielding techniques, material properties and weld speed on weld quality and penetration are discussed. It is shown that laser welding performance in thin materials is comparable to that of electron beams. It is further shown that high quality welds, as evidenced by NDT, mechanical and metal-lographic tests, can be achieved. The potential of the laser for industrial welding applications is indicated.

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

Surface structures of L10-MnGa (001) by scanning tunneling microscopy and first-principles theory

NASA Astrophysics Data System (ADS)

Corbett, J. P.; Guerrero-Sanchez, J.; Richard, A. L.; Ingram, D. C.; Takeuchi, N.; Smith, A. R.

2017-11-01

We report on the surface reconstructions of L10-ordered MnGa (001) thin films grown by molecular beam epitaxy on a 50 nm Mn3N2 (001) layer freshly grown on a magnesium oxide (001) substrate. Scanning tunneling microscopy, Auger electron spectroscopy, and reflection high energy electron diffraction are combined with first-principles density functional theory calculations to determine the reconstructions of the L10-ordered MnGa (001) surface. We find two lowest energy reconstructions of the MnGa (001) face: a 1 × 1 Ga-terminated structure and a 1 × 2 structure with a Mn replacing a Ga in the 1 × 1 Ga-terminated surface. The 1 × 2 reconstruction forms a row structure along [100]. The manganese:gallium stoichiometry within the surface based on theoretical modeling is in good agreement with experiment. Magnetic moment calculations for the two lowest energy structures reveal important surface and bulk effects leading to oscillatory total magnetization for ultra-thin MnGa (001) films.

Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Roschuk, T.; Wojcik, J.; Tan, X.; Davies, J. A.; Mascher, P.

2004-05-01

Thin silicon oxynitride (SiOxNy) and silicon-rich silicon-oxide (SiOx,x<=2) films of varying composition have been deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Films were deposited using various source gas flow rates while maintaining a constant chamber pressure. Thicknesses and refractive indices for these films were determined using ellipsometry. Bonding of the constituent atoms was analyzed using Fourier transform infrared (FTIR) spectroscopy. FTIR spectroscopy also allowed for the detection of bonded species such as hydrogen. Compositional characteristics were determined using various forms of ion beam analysis such as Rutherford backscattering and elastic recoil detection. These analysis techniques were used to determine the values of x and y, the molar fractions of oxygen and nitrogen, respectively, and the total amount of hydrogen present in the films. Using the results obtained from these methods the film characteristics were determined as a function of the deposition conditions. .

Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

NASA Astrophysics Data System (ADS)

Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

2016-03-01

Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

NASA Tech Briefs, April 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

THz conductivities of indium-tin-oxide nanowhiskers as a graded-refractive-index structure.

PubMed

Yang, Chan-Shan; Chang, Chia-Hua; Lin, Mao-Hsiang; Yu, Peichen; Wada, Osamu; Pan, Ci-Ling

2012-07-02

Indium-tin-oxide (ITO) nanowhiskers with attractive electrical and anti-reflection properties were prepared by the glancing-angle electron-beam evaporation technique. Structural and crystalline properties of such nanostructures were examined by scanning transmission electron microscopy and X-ray diffraction. Their frequency-dependent complex conductivities, refractive indices and absorption coefficients have been characterized with terahertz time-domain spectroscopy (THz-TDS), in which the nanowhiskers were considered as a graded-refractive-index (GRIN) structure instead of the usual thin film model. The electrical properties of ITO GRIN structures are analyzed and fitted well with Drude-Smith model in the 0.2~2.0 THz band. Our results indicate that the ITO nanowhiskers and its bottom layer atop the substrate exhibit longer carrier scattering times than ITO thin films. This signifies that ITO nanowhiskers have an excellent crystallinity with large grain size, consistent with X-ray data. Besides, we show a strong backscattering effect and fully carrier localization in the ITO nanowhiskers.

Human cardiac telocytes: 3D imaging by FIB-SEM tomography

PubMed Central

Cretoiu, D; Hummel, E; Zimmermann, H; Gherghiceanu, M; Popescu, L M

2014-01-01

Telocyte (TC) is a newly identified type of cell in the cardiac interstitium (www.telocytes.com). TCs are described by classical transmission electron microscopy as cells with very thin and long telopodes (Tps; cellular prolongations) having podoms (dilations) and podomers (very thin segments). TCs’ three-dimensional (3D) morphology is still unknown. Cardiac TCs seem to be particularly involved in long and short distance intercellular signalling and, therefore, their 3D architecture is important for understanding their spatial connections. Using focused ion beam scanning electron microscopy (FIB-SEM) we show, for the first time, the whole ultrastructural anatomy of cardiac TCs. 3D reconstruction of cardiac TCs by FIB-SEM tomography confirms that they have long, narrow but flattened (ribbon-like) telopodes, with humps generated by the podoms. FIB-SEM tomography also confirms the network made by TCs in the cardiac interstitium through adherens junctions. This study provides the first FIB-SEM tomography of a human cell type. PMID:25327290

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

A thin polymer membrane, nano-suit, enhancing survival across the continuum between air and high vacuum

PubMed Central

Takaku, Yasuharu; Suzuki, Hiroshi; Ohta, Isao; Ishii, Daisuke; Muranaka, Yoshinori; Shimomura, Masatsugu; Hariyama, Takahiko

2013-01-01

Most multicellular organisms can only survive under atmospheric pressure. The reduced pressure of a high vacuum usually leads to rapid dehydration and death. Here we show that a simple surface modification can render multicellular organisms strongly tolerant to high vacuum. Animals that collapsed under high vacuum continued to move following exposure of their natural extracellular surface layer (or that of an artificial coat-like polysorbitan monolaurate) to an electron beam or plasma ionization (i.e., conditions known to enhance polymer formation). Transmission electron microscopic observations revealed the existence of a thin polymerized extra layer on the surface of the animal. The layer acts as a flexible “nano-suit” barrier to the passage of gases and liquids and thus protects the organism. Furthermore, the biocompatible molecule, the component of the nano-suit, was fabricated into a “biomimetic” free-standing membrane. This concept will allow biology-related fields especially to use these membranes for several applications. PMID:23589878

SU-E-T-163: Thin-Film Organic Photocell (OPV) Properties in MV and KV Beams for Dosimetry Applications.

PubMed

Ng, S K; Hesser, J; Zhang, H; Gowrisanker, S; Yakushevich, S; Shulhevich, Y; Abkai, C; Wack, L; Zygmanski, P

2012-06-01

To characterize dosimetric properties of low-cost thin film organic-based photovoltaic (OPV) cells to kV and MV x-ray beams for their usage as large area dosimeter for QA and patient safety monitoring device. A series of thin film OPV cells of various areas and thicknesses were irradiated with MV beams to evaluate the stability and reproducibility of their response, linearity and sensitivity to absorbed dose. The OPV response to x-rays of various linac energies were also characterized. Furthermore the practical (clinical) sensitivity of the cells was determined using IMRT sweeping gap test generated with various gap sizes. To evaluate their potential usage in the development of low cost kV imaging device, the OPV cells were irradiated with kV beam (60-120 kVp) from a fluoroscopy unit. Photocell response to the absorbed dose was characterized as a function of the organic thin film thickness and size, beam energy and exposure for kV beams as well. In addition, photocell response was determined with and without thin plastic scintillator. Response of the OPV cells to the absorbed dose from kV and MV beams are stable and reproducible. The photocell response was linearly proportional to the size and about slightly decreasing with the thickness of the organic thin film, which agrees with the general performance of the photocells in visible light. The photocell response increases as a linear function of absorbed dose and x-ray energy. The sweeping gap tests performed showed that OPV cells have sufficient practical sensitivity to measured MV x-ray delivery with gap size as small as 1 mm. With proper calibration, the OPV cells could be used for online radiation dose measurement for quality assurance and patient safety purposes. Their response to kV beam show promising potential in development of low cost kV radiation detection devices. © 2012 American Association of Physicists in Medicine.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, A. A.; Hesjedal, T.; Diamond Light Source, Didcot OX11 0DE

We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined withmore » ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)« less

Thon rings from amorphous ice and implications of beam-induced Brownian motion in single particle electron cryo-microscopy.

PubMed

McMullan, G; Vinothkumar, K R; Henderson, R

2015-11-01

We have recorded dose-fractionated electron cryo-microscope images of thin films of pure flash-frozen amorphous ice and pre-irradiated amorphous carbon on a Falcon II direct electron detector using 300 keV electrons. We observe Thon rings [1] in both the power spectrum of the summed frames and the sum of power spectra from the individual frames. The Thon rings from amorphous carbon images are always more visible in the power spectrum of the summed frames whereas those of amorphous ice are more visible in the sum of power spectra from the individual frames. This difference indicates that while pre-irradiated carbon behaves like a solid during the exposure, amorphous ice behaves like a fluid with the individual water molecules undergoing beam-induced motion. Using the measured variation in the power spectra amplitude with number of electrons per image we deduce that water molecules are randomly displaced by a mean squared distance of ∼1.1 Å(2) for every incident 300 keV e(-)/Å(2). The induced motion leads to an optimal exposure with 300 keV electrons of 4.0 e(-)/Å(2) per image with which to observe Thon rings centred around the strong 3.7 Å scattering peak from amorphous ice. The beam-induced movement of the water molecules generates pseudo-Brownian motion of embedded macromolecules. The resulting blurring of single particle images contributes an additional term, on top of that from radiation damage, to the minimum achievable B-factor for macromolecular structure determination. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

From 2D slices to 3D volumes: image based reconstruction and morphological characterization of hippocampal cells on charged and uncharged surfaces using FIB/SEM serial sectioning.

PubMed

Schmidt, Franziska; Kühbacher, Markus; Gross, Ulrich; Kyriakopoulos, Antonius; Schubert, Helmut; Zehbe, Rolf

2011-03-01

3D imaging at a subcellular resolution is a powerful tool in the life sciences to investigate cells and their interactions with native tissues or artificial objects. While a tomographic experimental setup achieving a sufficient structural resolution can be established with either X-rays or electrons, the use of electrons is usually limited to very thin samples in transmission electron microscopy due to the poor penetration depths of electrons. The combination of a serial sectioning approach and scanning electron microscopy in state of the art dual beam experimental setups therefore offers a means to image highly resolved spatial details using a focused ion beam for slicing and an electron beam for imaging. The advantage of this technique over X-ray μCT or X-ray microscopy attributes to the fact that absorption is not a limiting factor in imaging and therefore even strong absorbing structures can be spatially reconstructed with a much higher possible resolution. This approach was used in this study to elucidate the effect of an electric potential on the morphology of cells from a hippocampal cell line (HT22) deposited on gold microelectrodes. While cells cultivated on two different controls (gold and polymer substrates) did show the expected stretched morphology, cells on both the anode and the cathode differed significantly. Cells deposited on the anode part of the electrode exhibited the most extreme deviation, being almost spherical and showed signs of chromatin condensation possibly indicating cell death. Furthermore, EDX was used as supplemental methodology for combined chemical and structural analyses. Copyright © 2010 Elsevier B.V. All rights reserved.