Utility of Thin-Film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Dickman, J. E.; Hepp, A. F.; Morel, D. L.; Ferekides, C. S.; Tuttle, J. R.; Hoffman, D. J.; Dhere, N. G.

2004-01-01

The thin-film solar cell program at NASA GRC is developing solar cell technologies for space applications which address two critical metrics: specific power (power per unit mass) and launch stowed volume. To be competitive for many space applications, an array using thin film solar cells must significantly increase specific power while reducing stowed volume when compared to the present baseline technology utilizing crystalline solar cells. The NASA GRC program is developing two approaches. Since the vast majority of the mass of a thin film solar cell is in the substrate, a thin film solar cell on a very lightweight flexible substrate (polymer or metal films) is being developed as the first approach. The second approach is the development of multijunction thin film solar cells. Total cell efficiency can be increased by stacking multiple cells having bandgaps tuned to convert the spectrum passing through the upper cells to the lower cells. Once developed, the two approaches will be merged to yield a multijunction, thin film solar cell on a very lightweight, flexible substrate. The ultimate utility of such solar cells in space require the development of monolithic interconnections, lightweight array structures, and ultra-lightweight support and deployment techniques.

Vacuum-deposited, nonpolymeric flexible organic light-emitting devices.

PubMed

Gu, G; Burrows, P E; Venkatesh, S; Forrest, S R; Thompson, M E

1997-02-01

We demonstrate mechanically flexible, organic light-emitting devices (OLED's) based on the nonpolymetric thin-film materials tris-(8-hydroxyquinoline) aluminum (Alq(3)) and N, N(?) -diphenyl- N, N(?) -bis(3-methylphenyl)1- 1(?) biphenyl-4, 4(?) diamine (TPD). The single heterostructure is vacuum deposited upon a transparent, lightweight, thin plastic substrate precoated with a transparent, conducting indium tin oxide thin film. The flexible OLED performance is comparable with that of conventional OLED's deposited upon glass substrates and does not deteriorate after repeated bending. The large-area (~1 - cm>(2)) devices can be bent without failure even after a permanent fold occurs if they are on the convex substrate surface or over a bend radius of ~0.5>cm if they are on the concave surface. Such devices are useful for ultralightweight, flexible, and comfortable full-color flat panel displays.

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

NASA Astrophysics Data System (ADS)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

Highly flexible InSnO electrodes on thin colourless polyimide substrate for high-performance flexible CH3NH3PbI3 perovskite solar cells

NASA Astrophysics Data System (ADS)

Park, Jeong-Il; Heo, Jin Hyuck; Park, Sung-Hyun; Hong, Ki Il; Jeong, Hak Gee; Im, Sang Hyuk; Kim, Han-Ki

2017-02-01

We fabricated high-performance flexible CH3NH3PbI3 (MAPbI3) perovskite solar cells with a power conversion efficiency of 15.5% on roll-to-roll sputtered ITO films on 60 μm-thick colourless polyimide (CPI) substrate. Due to the thermal stability of the CPI substrate, an ITO/CPI sample subjected to rapid thermal annealing at 300 °C showed a low sheet resistance of 57.8 Ω/square and high transmittance of 83.6%, which are better values than those of an ITO/PET sample. Outer and inner bending tests demonstrated that the mechanical flexibility of the ITO/CPI was superior to that of the conventional ITO/PET sample owing to the thinness of the CPI substrate. In addition, due to its good mechanical flexibility, the ITO/CPI showed no change in resistance after 10,000 cycle outer and inner dynamic fatigue tests. Flexible perovskite solar cells with the structure of Au/PTAA/MAPbI3/ZnO/ITO/CPI showed a high power conversion efficiency of 15.5%. The successful operation of these flexible perovskite solar cells on ITO/CPI substrate indicated that the ITO film on thermally stable CPI substrate is a promising of flexible substrate for high-temperature processing, a finding likely to advance the commercialization of cost-efficient flexible perovskite solar cells.

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Ribelin, Rosine

2007-01-01

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Hatano, Kaoru; Chida, Akihiro; Okano, Tatsuya; Sugisawa, Nozomu; Inoue, Tatsunori; Seo, Satoshi; Suzuki, Kunihiko; Oikawa, Yoshiaki; Miyake, Hiroyuki; Koyama, Jun; Yamazaki, Shunpei; Eguchi, Shingo; Katayama, Masahiro; Sakakura, Masayuki

2011-03-01

In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means “true” flexibility.

Fabrication and Characterization of Flexible Organic Light Emitting Diodes Based on Transparent Flexible Clay Substrates

NASA Astrophysics Data System (ADS)

Venkatachalam, Shanmugam; Hayashi, Hiromichi; Ebina, Takeo; Nakamura, Takashi; Nanjo, Hiroshi

2013-03-01

In the present work, transparent flexible polymer-doped clay (P-clay) substrates were prepared for flexible organic light emitting diode (OLED) applications. Nanocrystalline indium tin oxide (ITO) thin films were prepared on P-clay substrates by ion-beam sputter deposition method. The structural, optical, and electrical properties of as-prepared ITO/P-clay showed that the as-prepared ITO thin film was amorphous, and the average optical transparency and sheet resistance were around 84% and 56 Ω/square, respectively. The as-prepared ITO/P-clay samples were annealed at 200 and 270 °C for 1 h to improve the optical transparency and electrical conductivity. The average optical transparency was found to be maximum at an annealing temperature of 200 °C. Finally, N,N-bis[(1-naphthyl)-N,N '-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB), tris(8-hydroxyquinoline) aluminum (Alq3) thin films, and aluminum (Al) electrode were prepared on ITO/P-clay substrates by thermal evaporation method. The current density-voltage (J-V) characteristic of Al/NPB/ITO/P-clay showed linear Ohmic behaviour. In contrast, J-V characteristic of Al/Alq3/NPB/ITO/P-clay showed non-linear Schottky behaviour. Finally, a very flexible OLED was successfully fabricated on newly fabricated transparent flexible P-clay substrates. The electroluminescence study showed that the emission intensity of light from the flexible OLED device gradually increased with increasing applied voltage.

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Treesearch

Jung-Hun Seo; Tzu-Hsuan Chang; Jaeseong Lee; Ronald Sabo; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly...

Thin film with oriented cracks on a flexible substrate

DOEpatents

Feng, Bao; McGilvray, Andrew; Shi, Bo

2010-07-27

A thermoelectric film is disclosed. The thermoelectric film includes a substrate that is substantially electrically non-conductive and flexible and a thermoelectric material that is deposited on at least one surface of the substrate. The thermoelectric film also includes multiple cracks oriented in a predetermined direction.

Light management in flexible OLEDs

NASA Astrophysics Data System (ADS)

Harkema, Stephan; Pendyala, Raghu K.; Geurts, Christian G. C.; Helgers, Paul L. J.; Levell, Jack W.; Wilson, Joanne S.; MacKerron, Duncan

2014-10-01

Organic light-emitting diodes (OLEDs) are a promising lighting technology. In particular OLEDs fabricated on plastic foils are believed to hold the future. These planar devices are subject to various optical losses, which requires sophisticated light management solutions. Flexible OLEDs on plastic substrates are as prone to losses related to wave guiding as devices on glass. However, we determined that OLEDs on plastic substrates are susceptible to another loss mode due to wave guiding in the thin film barrier. With modeling of white polymer OLEDs fabricated on PEN substrates, we demonstrate that this loss mode is particularly sensitive to polarized light emission. Furthermore, we investigated how thin film barrier approaches can be combined with high index light extraction layers. Our analysis shows that OLEDs with a thin film barrier consisting of an inorganic/organic/inorganic layer sequence, a low index inorganic negatively affects the OLED efficiency. We conclude that high index inorganics are more suitable for usage in high efficiency flexible OLEDs.

Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Plastic and Metal Foils for Flexible Displays

DTIC Science & Technology

2008-12-01

TFTs ) arrays for high information content active matrix flexible displays for Army applications. For all flexible substrates a manufacturable...impermeable flexible substrate systems “display-ready” materials and handling protocols, (ii) high performance TFT devices and circuits fabricated...processes for integration with the flexible TFT arrays. Approaches and solution to address each of these major challenges are described in the

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Probing flexible thermoplastic thin films on a substrate using ultrasonic waves to retrieve mechanical moduli and density: Inverse problem

NASA Astrophysics Data System (ADS)

Lazri, H.; Ogam, E.; Amar, B.; Fellah, Z. E. A.; Sayoud, N.; Boumaiza, Y.

2018-05-01

Flexible, supple thermoplastic thin films (PVB and PET) placed on elastic substrates were probed using ultrasonic waves to identify their mechanical moduli and density. The composite medium immersed in a fluid host medium (water) was excited using a 50 Mhz transducer operating at normal incidence in reflection mode. Elastic wave propagation data from the stratified medium was captured in the host medium as scattered field. These data were used along with theoretical fluid-solid interaction forward models for stratified-media developed using elasticity theory, to solve an inverse problem for the recovery of the model parameters of the thin films. Two configurations were modeled, one considering the substrate as a semi-infinite elastic medium and the second the substrate having a finite thickness and flanked by a semi-infinite host medium. Transverse slip for the sliding interface between the films and substrate was chosen. This was found to agree with the experiments whereby the thin films were just placed on the substrate without bonding. The inverse problems for the recovery of the mechanical parameters were successful in retrieving the thin films’ parameters under the slip boundary condition. The possible improvements to the new method for the characterization of thin films are discussed.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.

PubMed

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-12

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O 2 /Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O 2 /Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (I off ) of 3 pA, a high on/off current ratio of 2 × 10 7 , a high saturation mobility (μ sat ) of 66.7 cm 2 /V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (V th ) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

NASA Astrophysics Data System (ADS)

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-01

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

Pentacene-based organic thin film transistors, integrated circuits, and active matrix displays on polymeric substrates

NASA Astrophysics Data System (ADS)

Sheraw, Christopher Duncan

2003-10-01

Organic thin film transistors are attractive candidates for a variety of low cost, large area commercial electronics including smart cards, RF identification tags, and flat panel displays. Of particular interest are high performance organic thin film transistors (TFTs) that can be fabricated on flexible polymeric substrates allowing low-cost, lightweight, rugged electronics such as flexible active matrix displays. This thesis reports pentacene organic thin film transistors fabricated on flexible polymeric substrates with record performance, the fastest photolithographically patterned organic TFT integrated circuits on polymeric substrates reported to date, and the fabrication of the organic TFT backplanes used to build the first organic TFT-driven active matrix liquid crystal display (AMLCD), also the first AMLCD on a flexible substrate, ever reported. In addition, the first investigation of functionalized pentacene derivatives used as the active layer in organic thin film transistors is reported. A low temperature (<110°C) process technology was developed allowing the fabrication of high performance organic TFTs, integrated circuits, and large TFT arrays on flexible polymeric substrates. This process includes the development of a novel water-based photolithographic active layer patterning process using polyvinyl alcohol that allows the patterning of organic semiconductor materials for elimination of active layer leakage current without causing device degradation. The small molecule aromatic hydrocarbon pentacene was used as the active layer material to fabricate organic TFTs on the polymeric material polyethylene naphthalate with field-effect mobility as large as 2.1 cm2/V-s and on/off current ratio of 108. These are the best values reported for organic TFTs on polymeric substrates and comparable to organic TFTs on rigid substrates. Analog and digital integrated circuits were also fabricated on polymeric substrates using pentacene TFTs with propagation delay as low as 38 musec and clocked digital circuits that operated at 1.1 kHz. These are the fastest photolithographically patterned organic TFT circuits on polymeric substrates reported to date. Finally, 16 x 16 pentacene TFT pixel arrays were fabricated on polymeric substrates and integrated with polymer dispersed liquid crystal to build an AMLCD. The pixel arrays showed good optical response to changing data signals when standard quarter-VGA display waveforms were applied. This result marks the first organic TFT-driven active matrix liquid crystal display ever reported as well as the first active matrix liquid crystal display on a flexible polymeric substrate. Lastly, functionalized pentacene derivatives were used as the active layer in organic thin film transistor materials. Functional groups were added to the pentacene molecule to influence the molecular ordering so that the amount of pi-orbital overlap would be increased allowing the potential for improved field-effect mobility. The functionalization of these materials also improves solubility allowing for the possibility of solution-processed devices and increased oxidative stability. Organic thin film transistors were fabricated using five different functionalized pentacene active layers. Devices based on the pentacene derivative triisopropylsilyl pentacene were found to have the best performance with field-effect mobility as large as 0.4 cm 2/V-s.

A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit

NASA Astrophysics Data System (ADS)

Jiang, Yuan; Zhang, Menglun; Duan, Xuexin; Zhang, Hao; Pang, Wei

2017-07-01

In this paper, a 2.6 GHz air-gap type thin film piezoelectric MEMS resonator was fabricated on a flexible polyethylene terephthalate film. A fabrication process combining transfer printing and hot-embossing was adopted to form a free-standing structure. The flexible radio frequency MEMS resonator possesses a quality factor of 946 and an effective coupling coefficient of 5.10%, and retains its high performance at a substrate bending radius of 1 cm. The achieved performance is comparable to that of conventional resonators on rigid silicon wafers. Our demonstration provides a viable approach to realizing universal MEMS devices on flexible polymer substrates, which is of great significance for building future fully integrated and multi-functional wireless flexible electronic systems.

Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED

NASA Astrophysics Data System (ADS)

Xu, Zhiping; Li, Min; Xu, Miao; Zou, Jianhua; Gao, Zhuo; Pang, Jiawei; Guo, Ying; Zhou, Lei; Wang, Chunfu; Fu, Dong; Peng, Junbiao; Wang, Lei; Cao, Yong

2014-10-01

We report a flexible amorphous Lanthanide doped In-Zn-O (IZO) thin-film transistor (TFT) backplane on polyimide (PI) substrate. In order to de-bond the PI film from the glass carrier easily after the flexible AMOLED process, a special inorganic film is deposited on the glass before the PI film is coated. The TFT exhibited a field-effect mobility of 6.97 cm2V-1 s-1, a subthreshold swing of 0.248 V dec-1, and an Ion/Ioff ratio of 5.19×107, which is sufficient to drive the OLEDs.

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Indigenous unit for bending and twisting tests of ultra-thin films on a flexible substrate

NASA Astrophysics Data System (ADS)

D'souza, Slavia Deeksha; Hazarika, Pratim; Prakasarao, Ch Surya; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

An indigenous unit is designed to test the stability of thin films deposited on to a flexible substrate by inducing a required number of bending and twisting under specific conditions. The unit is designed using aluminum and automated by sending pulse width modulated signals to servo motors using ATmega328 microcontroller. We have tested the unit by imparting stress on to a commercial ITO film deposited on a PET substrate. After a definite number of bending and twisting cycles, the electrical and surface properties are studied and the results are discussed.

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

PubMed Central

Wang, Fang-Hsing; Chen, Kun-Neng; Hsu, Chao-Ming; Liu, Min-Chu; Yang, Cheng-Fu

2016-01-01

In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared. PMID:28335216

Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Rybicki, George C.; Raffaelle, Ryne P.; Harris, Jerry D.; Hehemann, David G.; Junek, William; Gorse, Joseph; Thompson, Tracy L.; Hollingsworth, Jennifer A.; Buhro, William E.

2000-01-01

The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.

The macroscopic delamination of thin films from elastic substrates

PubMed Central

Vella, Dominic; Bico, José; Boudaoud, Arezki; Roman, Benoit; Reis, Pedro M.

2009-01-01

The wrinkling and delamination of stiff thin films adhered to a polymer substrate have important applications in “flexible electronics.” The resulting periodic structures, when used for circuitry, have remarkable mechanical properties because stretching or twisting of the substrate is mostly accommodated through bending of the film, which minimizes fatigue or fracture. To date, applications in this context have used substrate patterning to create an anisotropic substrate-film adhesion energy, thereby producing a controlled array of delamination “blisters.” However, even in the absence of such patterning, blisters appear spontaneously, with a characteristic size. Here, we perform well-controlled experiments at macroscopic scales to study what sets the dimensions of these blisters in terms of the material properties and explain our results by using a combination of scaling and analytical methods. Besides pointing to a method for determining the interfacial toughness, our analysis suggests a number of design guidelines for the thin films used in flexible electronic applications. Crucially, we show that, to avoid the possibility that delamination may cause fatigue damage, the thin film thickness must be greater than a critical value, which we determine. PMID:19556551

Template-Free Mesoporous Electrochromic Films on Flexible Substrates from Tungsten Oxide Nanorods

DOE PAGES

Heo, Sungyeon; Kim, Jongwook; Ong, Gary K.; ...

2017-08-08

Low-temperature processed mesoporous nanocrystal thin films are platforms for fabricating functional composite thin films on flexible substrates. Using a random arrangement of anisotropic nanocrystals can be a facile solution to generate pores without templates. However, the tendency for anisotropic particles to spontaneously assemble into a compact structure must be overcome. Here in this paper, we present a method to achieve random networking of nanorods during solution phase deposition by switching their ligand-stabilized colloidal nature into a charge-stabilized nature by a ligand-stripping chemistry. Ligand-stripped tungsten suboxide (WO 2.72) nanorods result in uniform mesoporous thin films owing to repulsive electrostatic forces preventingmore » nanorods from densely packing. Porosity and pore size distribution of thin films are controlled by changing the aspect ratio of the nanorods. This template-free mesoporous structure, achieved without annealing, provides a framework for introducing guest components, therefore enabling our fabrication of inorganic nanocomposite electrochromic films on flexible substrates. Following infilling of niobium polyoxometalate clusters into pores and successive chemical condensation, a WO x–NbO x composite film is produced that selectively controls visible and near-infrared light transmittance without any annealing required. The composite shows rapid switching kinetics and can be stably cycled between optical states over 2000 times. This simple strategy of using anisotropic nanocrystals gives insight into mesoporous thin film fabrication with broader applications for flexible devices.« less

Template-Free Mesoporous Electrochromic Films on Flexible Substrates from Tungsten Oxide Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heo, Sungyeon; Kim, Jongwook; Ong, Gary K.

Low-temperature processed mesoporous nanocrystal thin films are platforms for fabricating functional composite thin films on flexible substrates. Using a random arrangement of anisotropic nanocrystals can be a facile solution to generate pores without templates. However, the tendency for anisotropic particles to spontaneously assemble into a compact structure must be overcome. Here in this paper, we present a method to achieve random networking of nanorods during solution phase deposition by switching their ligand-stabilized colloidal nature into a charge-stabilized nature by a ligand-stripping chemistry. Ligand-stripped tungsten suboxide (WO 2.72) nanorods result in uniform mesoporous thin films owing to repulsive electrostatic forces preventingmore » nanorods from densely packing. Porosity and pore size distribution of thin films are controlled by changing the aspect ratio of the nanorods. This template-free mesoporous structure, achieved without annealing, provides a framework for introducing guest components, therefore enabling our fabrication of inorganic nanocomposite electrochromic films on flexible substrates. Following infilling of niobium polyoxometalate clusters into pores and successive chemical condensation, a WO x–NbO x composite film is produced that selectively controls visible and near-infrared light transmittance without any annealing required. The composite shows rapid switching kinetics and can be stably cycled between optical states over 2000 times. This simple strategy of using anisotropic nanocrystals gives insight into mesoporous thin film fabrication with broader applications for flexible devices.« less

Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film.

PubMed

Gao, Pingqi; Zhang, Qing

2014-02-14

Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm(2) V(-1) s(-1), a subthreshold slope as low as 150 mV dec(-1), operating gate voltages less than 2 V, on/off ratios larger than 10(4) and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc.

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Hsin-Cheng; Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw; Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology ismore » suitable for use in flexible displays.« less

Using graphene/styrene-isoprene-styrene copolymer composite thin film as a flexible microstrip antenna for the detection of heptane vapors

NASA Astrophysics Data System (ADS)

Olejnik, Robert; Matyas, Jiri; Slobodian, Petr; Riha, Pavel

2018-03-01

Most portable devices, such as mobile phones or tablets, use antennas made of copper. This paper demonstrates the possible use of antenna constructed from electrically conductive polymer composite materials for use in those applications. The method of preparation and the properties of the graphene/styrene-isoprene-styrene copolymer as flexible microstrip antenna are described in this contribution. Graphene/styrene-isoprene-styrene copolymer toluene solution was prepared by means of ultrasound and the PET substrate was dip coated to reach a fine thin film. The main advantages of using PET as a substrate are low weight and flexibility. The final size of the flexible microstrip antenna was 10 × 25 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with a weight of 0.110 g. The resulting antenna operates at a frequency of 1.8 GHz and gain ‑40.02 dB.

Recent Progress Towards Space Applications Of Thin Film Solar Cells- The German Joint Project 'Flexible CIGSE Thin Film Solar Cells For Space Flight' And OOV

NASA Astrophysics Data System (ADS)

Brunner, Sebastian; Zajac, Kai; Nadler, Michael; Seifart, Klaus; Kaufmann, Christian A.; Caballero, Raquel; Schock, Hans-Werner; Hartmann, Lars; Otte, Karten; Rahm, Andreas; Scheit, Christian; Zachmann, Hendrick; Kessler, Friedrich; Wurz, Roland; Schulke, Peter

2011-10-01

A group of partners from an academic and industrial background are developing a flexible Cu(In,Ga)Se2 (CIGSe) thin film solar cell technology on a polyimide substrate that aims to be a future alternative to current rigid solar cell technologies for space applications. In particular on missions with high radiation volumes, the superior tolerance of chalcopyrite based thin film solar cell (TFSC) technologies with respect to electron and proton radiation, when compared to the established Si- or III-V based technologies, can be advantageous. Of all thin film technologies, those based on CIGSe have the highest potential to reach attractive photovoltaic conversion efficiencies and combine these with low weight in order to realize high power densities on solar cell and generator level. The use of a flexible substrate ensures a high packing density. A working demonstrator is scheduled for flight this year.

Optically transparent frequency selective surfaces on flexible thin plastic substrates

NASA Astrophysics Data System (ADS)

Dewani, Aliya A.; O'Keefe, Steven G.; Thiel, David V.; Galehdar, Amir

2015-02-01

A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

Highly Efficient Flexible Perovskite Solar Cells with Antireflection and Self-Cleaning Nanostructures.

PubMed

Tavakoli, Mohammad Mahdi; Tsui, Kwong-Hoi; Zhang, Qianpeng; He, Jin; Yao, Yan; Li, Dongdong; Fan, Zhiyong

2015-10-27

Flexible thin film solar cells have attracted a great deal of attention as mobile power sources and key components for building-integrated photovoltaics, due to their light weight and flexible features in addition to compatibility with low-cost roll-to-roll fabrication processes. Among many thin film materials, organometallic perovskite materials are emerging as highly promising candidates for high efficiency thin film photovoltaics; however, the performance, scalability, and reliability of the flexible perovskite solar cells still have large room to improve. Herein, we report highly efficient, flexible perovskite solar cells fabricated on ultrathin flexible glasses. In such a device structure, the flexible glass substrate is highly transparent and robust, with low thermal expansion coefficient, and perovskite thin film was deposited with a thermal evaporation method that showed large-scale uniformity. In addition, a nanocone array antireflection film was attached to the front side of the glass substrate in order to improve the optical transmittance and to achieve a water-repelling effect at the same time. It was found that the fabricated solar cells have reasonable bendability, with 96% of the initial value remaining after 200 bending cycles, and the power conversion efficiency was improved from 12.06 to 13.14% by using the antireflection film, which also demonstrated excellent superhydrophobicity.

Laser Structuring of Thin Layers for Flexible Electronics by a Shock Wave-induced Delamination Process

NASA Astrophysics Data System (ADS)

Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus

The defect-free laser-assisted structuring of thin films on flexible substrates is a challenge for laser methods. However, solving this problem exhibits an outstanding potential for a pioneering development of flexible electronics. Thereby, the laser-assisted delamination method has a great application potential. At the delamination process: the localized removal of the layer is induced by a shock wave which is produced by a laser ablation process on the rear side of the substrate. In this study, the thin-film patterning process is investigated for different polymer substrates dependent on the material and laser parameters using a KrF excimer laser. The resultant structures were studied by optical microscopy and white light interferometry (WLI). The delamination process was tested at different samples (indium tin oxide (ITO) on polyethylene terephthalate (PET), epoxy-based negative photoresist (SU8) on polyimide (PI) and indium tin oxide/copper indium gallium selenide/molybdenum (ITO/CIGS/Mo) on PI.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Silicon thin-film transistor backplanes on flexible substrates

NASA Astrophysics Data System (ADS)

Kattamis, Alexis Z.

Flexible large area electronics, especially for displays, is a rapidly growing field. Since hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have become the industry standard for liquid crystal displays, it makes sense that they be used in any transition from glass substrates to flexible substrates. The goal of this thesis work was to implement a-Si:H backplane technology on stainless steel and clear plastic substrates, with minimal recipe changes to ensure high device quality. When fabricating TFTs on flexible substrates many new issues arise, from thin-film fracture to overlay alignment errors. Our approach was to maintain elevated deposition temperatures (˜300°C) and engineer methods to minimize these problems, rather than reducing deposition temperatures. The resulting TFTs exhibit more stable operation than their low temperature counterparts and are therefore similar to the TFTs produced on glass. Two display projects using a-Si:H TFTs will be discussed in detail. They are an active-matrix organic light emitting display (AMOLED) on stainless steel and an active-matrix electrophoretic display (AMEPD) on clear plastic, with TFTs deposited at 250°C-280°C. Achieving quality a-Si:H TFTs on these substrates required addressing a host of technical challenges, including surface roughness and feature misalignment. Nanocrystalline silicon (nc-Si) was also implemented on a clear plastic substrate as a possible alternative to a-Si:H. nc-Si:H TFTs can be deposited using the same techniques as a-Si:H but yield carrier mobilities one order of magnitude greater. Their large mobilities could enable high resolution OLED displays and system-on-panel electronics.

Residual stress analysis for oxide thin film deposition on flexible substrate using finite element method

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Huang, Chen-Yu; Lin, Ssu-Fan; Chen, Sheng-Hui

2011-09-01

Residual or internal stresses directly affect a variety of phenomena including adhesion, generation of crystalline defects, perfection of epitaxial layers and formation of film surface growths such as hillocks and whiskers. Sputtering oxide films with high density promote high compressive stress, and it offers researchers a reference if the value of residual stress could be analyzed directly. Since, the study of residual stress of SiO2 and Nb2O5 thin film deposited by DC magnetron sputtered on hard substrate (BK7) and flexible substrate (PET and PC). A finite element method (FEM) with an equivalent-reference-temperature (ERT) technique had been proposed and used to model and evaluate the intrinsic strains of layered structures. The research has improved the equivalent reference temperature (ERT) technique of the simulation of intrinsic strain for oxygen film. The results have also generalized two models connecting to the lattice volume to predict the residual stress of hard substrate and flexible substrate with error of 3% and 6%, respectively.

Fabrication of all-carbon nanotube electronic devices on flexible substrates through CVD and transfer methods.

PubMed

Zou, Yuan; Li, Qunqing; Liu, Junku; Jin, Yuanhao; Qian, Qingkai; Jiang, Kaili; Fan, Shoushan

2013-11-13

SWNT thin films with different nanotube densities are fabricated by CVD while controlling the concentration of catalyst and growth time. Three layers of SWNT films are transferred to flexible substrates serving as electrodes and channel materials, respectively. All-carbon nanotube TFTs with an on/off ratio as high as 10(5) are obtained. Inverters are fabricated on top of the flexible substrates with symmetric input/output behavior. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zinc oxide films chemically grown onto rigid and flexible substrates for TFT applications

NASA Astrophysics Data System (ADS)

Suchea, M.; Kornilios, N.; Koudoumas, E.

2010-10-01

This contribution presents some preliminary results regarding the use of a chemical route for the growth of good quality ZnO thin films that can be used for the fabrication of thin film transistors (TFTs). The films were grown at rather low temperature (60 °C) on glass and PET substrates using non-aqueous (zinc acetate dihydrate in methanol) precursor solution and their surface morphology, crystalline structure, optical transmittance and electrical characteristics were studied. The study indicated that good quality films with desirable ZnO structure onto rigid and flexible substrates can be obtained, using a simple, cheap, low temperature chemical growth method.

Ultra-smooth glassy graphene thin films for flexible transparent circuits

PubMed Central

Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

2016-01-01

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

Dewetting of thin films on flexible substrates via direct-write laser exposure

NASA Astrophysics Data System (ADS)

Ferrer, Anthony Jesus

Microelectromechanical systems (MEMS) have enabled a wide variety of technologies both in the consumer space and in industrial/research areas. At the market level, such devices advance by the invention and innovation of production techniques. Additionally, there has been increased demand for flexible versions of such MEMS devices. Thin film patterning, represents a key technology for the realization of such flexible electronics. Patterns and methods that can be directly written into the thin film allow for design modification on the fly with the need for harsh chemicals and long etching steps. Laser-induced dewetting has the potential to create patterns in thin films at both the microscopic and nanoscopic level without wasting deposited material. This thesis presents the first demonstration of high-speed direct-write patterning of metallic thin films that uses a laser-induced dewetting phenomenon to prevent material loss. The ability to build film material with this technique is explored using various scanning geometries. Finally, demonstrations of direct-write dewetting of a variety of thin films will be presented with special consideration for high melting point metals deposited upon polymer substrates.

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

PubMed

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High volume method of making low-cost, lightweight solar materials

DOEpatents

Blue, Craig A.; Clemens, Art; Duty, Chad E.; Harper, David C.; Ott, Ronald D.; Rivard, John D.; Murray, Christopher S.; Murray, Susan L.; Klein, Andre R.

2014-07-15

A thin film solar cell and a method fabricating thin film solar cells on flexible substrates. The method includes including providing a flexible polymeric substrate, depositing a photovoltaic precursor on a surface of the substrate, such as CdTe, ZrTe, CdZnTe, CdSe or Cu(In,Ga)Se.sub.2, and exposing the photovoltaic precursor to at least one 0.5 microsecond to 10 second pulse of predominately infrared light emitted from a light source having a power output of about 20,000 W/cm.sup.2 or less to thermally convert the precursor into a crystalline photovoltaic material having a photovoltaic efficiency of greater than one percent, the conversion being carried out without substantial damage to the substrate.

1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

DTIC Science & Technology

2010-02-02

pf a- IGZO TFTs. IV. RF Characteristics of Room Temperature Deposited Indium Zinc Oxide Thin - Film Transistors Depletion-mode indium zinc...III. High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated On Polyethylene Terephthalate Substrates High-performance...amorphous (a-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate (PET) substrates coated with indium

Flexible top-emitting OLEDs for lighting: bending limits

NASA Astrophysics Data System (ADS)

Schwamb, Philipp; Reusch, Thilo C.; Brabec, Christoph J.

2013-09-01

Flexible OLED light sources have great appeal due to new design options, being unbreakable and their low weight. Top-emitting OLED device architectures offer the broadest choice of substrate materials including metals which are robust, impermeable to humidity, and good thermal conductors making them promising candidates for flexible OLED device substrates. In this study, we investigate the bending limits of flexible top-emitting OLED lighting devices with transparent metal electrode and thin film encapsulation on a variety of both metal and plastic foils. The samples were subjected to concave and convex bending and inspected by different testing methods for the onset of breakdown for example visible defects and encapsulation failures. The critical failure modes were identified as rupture of the transparent thin metal top electrode and encapsulation for convex bending and buckling of the transparent metal top electrode for concave bending. We investigated influences from substrate material and thickness and top coating thickness. The substrate thickness is found to dominate bending limits as expected by neutral layer modeling. Coating shows strong improvements for all substrates. Bending radii <15mm are achieved for both convex and concave testing without damage to devices including their encapsulation.

Single Source Precursors for Thin Film Solar Cells

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

2002-01-01

The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

Status of flexible CIS research at ISET

NASA Technical Reports Server (NTRS)

Basol, B. M.; Kapur, V. K.; Minnick, A.; Halani, A.; Leidholm, C. R.

1994-01-01

Polycrystalline thin film solar cells fabricated on light-weight, flexible substrates are very attractive for space applications. In this work CulnSe2 (CIS) based thin film devices were processed on metallic foil substrates using the selenization technique. CIS deposition method involved reaction of electron-bean evaporated Cu-In precursor layers with a selenizing atmosphere at around 400 C. Several metallic foils such as Mo, Ti, Al, Ni, and Cu were evaluated as possible substrates for these devices. Solar cells with AM1.5 efficiencies of 9.0-9.34 percent and good mechanical integrity were demonstrated on Mo and Ti foils. Monolithic integration of these devices was also demonstrated up to 4 in x 4 in size.

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Ferrocene pixels by laser-induced forward transfer: towards flexible microelectrode printing

NASA Astrophysics Data System (ADS)

Mitu, B.; Matei, A.; Filipescu, M.; Palla Papavlu, A.; Bercea, A.; Lippert, T.; Dinescu, M.

2017-03-01

The aim of this work is to demonstrate the potential of laser-induced forward transfer (LIFT) as a printing technology, alternative to standard microfabrication techniques, in the area of flexible micro-electrode fabrication. First, ferrocene thin films are deposited onto fused silica and fused silica substrates previously coated with a photodegradable polymer film (triazene polymer) by matrix assisted pulsed laser evaporation (MAPLE). The morphology and chemical structure of the ferrocene thin films deposited by MAPLE has been investigated by atomic force microscopy and Fourier transformed infrared spectroscopy, and no structural damage occurs as a result of the laser deposition. Second, LIFT is applied to print for the first time ferrocene pixels and lines onto flexible polydimethylsiloxane (PDMS) substrates. The ferrocene pixels and lines are flawlessly transferred onto the PDMS substrates in air at room temperature, without the need of additional conventional photolithography processes. We believe that these results are very promising for a variety of applications ranging from flexible electronics to lab-on-a-chip devices, MEMS, and medical implants.

Thin Film Transistor Control Circuitry for MEMS Acoustic Transducers

NASA Astrophysics Data System (ADS)

Daugherty, Robin

This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10-100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.

Test results for electron beam charging of flexible insulators and composites. [solar array substrates, honeycomb panels, and thin dielectric films

NASA Technical Reports Server (NTRS)

Staskus, J. V.; Berkopec, F. D.

1979-01-01

Flexible solar-array substrates, graphite-fiber/epoxy - aluminum honeycomb panels, and thin dielectric films were exposed to monoenergetic electron beams ranging in energy from 2 to 20 keV in the Lewis Research Center's geomagnetic-substorm-environment simulation facility to determine surface potentials, dc currents, and surface discharges. The four solar-array substrate samples consisted of Kapton sheet reinforced with fabrics of woven glass or carbon fibers. They represented different construction techniques that might be used to reduce the charge accumulation on the array back surface. Five honeycomb-panel samples were tested, two of which were representative of Voyager antenna materials and had either conductive or nonconductive painted surfaces. A third sample was of Navstar solar-array substrate material. The other two samples were of materials proposed for use on Intelsat V. All the honeycomb-panel samples had graphite-fiber/epoxy composite face sheets. The thin dielectric films were 2.54-micrometer-thick Mylar and 7.62-micrometer-thick Kapton.

Flexible organic TFT bio-signal amplifier using reliable chip component assembly process with conductive adhesive.

PubMed

Yoshimoto, Shusuke; Uemura, Takafumi; Akiyama, Mihoko; Ihara, Yoshihiro; Otake, Satoshi; Fujii, Tomoharu; Araki, Teppei; Sekitani, Tsuyoshi

2017-07-01

This paper presents a flexible organic thin-film transistor (OTFT) amplifier for bio-signal monitoring and presents the chip component assembly process. Using a conductive adhesive and a chip mounter, the chip components are mounted on a flexible film substrate, which has OTFT circuits. This study first investigates the assembly technique reliability for chip components on the flexible substrate. This study also specifically examines heart pulse wave monitoring conducted using the proposed flexible amplifier circuit and a flexible piezoelectric film. We connected the amplifier to a bluetooth device for a wearable device demonstration.

Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Jin, Michael H.; Lau, Janice E.; Harris, Jerry D.; Cowen, Jonathan E.; Duraj, Stan A.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

NASA Astrophysics Data System (ADS)

Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

2018-05-01

It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

2012-11-01

Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

High-efficiency robust perovskite solar cells on ultrathin flexible substrates

PubMed Central

Li, Yaowen; Meng, Lei; Yang, Yang (Michael); Xu, Guiying; Hong, Ziruo; Chen, Qi; You, Jingbi; Li, Gang; Yang, Yang; Li, Yongfang

2016-01-01

Wide applications of personal consumer electronics have triggered tremendous need for portable power sources featuring light-weight and mechanical flexibility. Perovskite solar cells offer a compelling combination of low-cost and high device performance. Here we demonstrate high-performance planar heterojunction perovskite solar cells constructed on highly flexible and ultrathin silver-mesh/conducting polymer substrates. The device performance is comparable to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion efficiency of 14.0%, while the specific power (the ratio of power to device weight) reaches 1.96 kW kg−1, given the fact that the device is constructed on a 57-μm-thick polyethylene terephthalate based substrate. The flexible device also demonstrates excellent robustness against mechanical deformation, retaining >95% of its original efficiency after 5,000 times fully bending. Our results confirmed that perovskite thin films are fully compatible with our flexible substrates, and are thus promising for future applications in flexible and bendable solar cells. PMID:26750664

Tensile characteristics of metal nanoparticle films on flexible polymer substrates for printed electronics applications.

PubMed

Kim, Sanghyeok; Won, Sejeong; Sim, Gi-Dong; Park, Inkyu; Lee, Soon-Bok

2013-03-01

Metal nanoparticle solutions are widely used for the fabrication of printed electronic devices. The mechanical properties of the solution-processed metal nanoparticle thin films are very important for the robust and reliable operation of printed electronic devices. In this paper, we report the tensile characteristics of silver nanoparticle (Ag NP) thin films on flexible polymer substrates by observing the microstructures and measuring the electrical resistance under tensile strain. The effects of the annealing temperatures and periods of Ag NP thin films on their failure strains are explained with a microstructural investigation. The maximum failure strain for Ag NP thin film was 6.6% after initial sintering at 150 °C for 30 min. Thermal annealing at higher temperatures for longer periods resulted in a reduction of the maximum failure strain, presumably due to higher porosity and larger pore size. We also found that solution-processed Ag NP thin films have lower failure strains than those of electron beam evaporated Ag thin films due to their highly porous film morphologies.

Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

NASA Astrophysics Data System (ADS)

Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

2018-05-01

In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of <ɛ2> peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

Self-organized antireflection CuIn(S,Se)2 nano-protrusions on flexible substrates by ion erosion based on CuInS2 nanocrystal precursor inks

NASA Astrophysics Data System (ADS)

Yen, Yu-Ting; Wang, Yi-Chung; Chen, Chia-Wei; Tsai, Hung-Wei; Chen, Yu-Ze; Hu, Fan; Chueh, Yu-Lun

2015-11-01

In this work, an approach to achieve surface nano-protrusions on a chalcopyrite CuIn(S,Se)2 thin film was demonstrated. Home-made CuInS2 nanocrystals with average diameter of 20 nm were prepared and characterized. By applying ion erosion process on the CuIn(S,Se)2 film, large-area self-aligned nano-protrusions can be formed. Interestingly, the process can be applied on flexible substrate where the CuIn(S,Se)2 film remains intact with no visible cracking after several bending tests. In addition, reflectance spectra reveal the extraordinary anti-reflectance characteristics of nano-protrusions on the CuIn(S,Se)2 film with the incident light from 350 to 2000 nm. A 36-cm2 CuIn(S,Se)2 film with nano-protrusions on flexible molybdenum foil substrate has been demonstrated, which demonstrated the feasibility of developing low cost with a high optical absorption CuIn(S,Se)2 flexible thin film.

Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

2016-11-01

For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Feng, E-mail: fangfeng@seu.edu.cn; Zhang, Yeyu; Wu, Xiaoqin

2015-08-15

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical propertiesmore » of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.« less

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

NASA Astrophysics Data System (ADS)

Cui, Guodong; Han, Dedong; Yu, Wen; Shi, Pan; Zhang, Yi; Huang, Lingling; Cong, Yingying; Zhou, Xiaoliang; Zhang, Xiaomi; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2016-04-01

By applying a novel active layer of titanium zinc oxide (TiZO), we have successfully fabricated fully transparent thin-film transistors (TFTs) with a bottom gate structure fabricated on a flexible plastic substrate at low temperatures. The effects of various oxygen partial pressures during channel deposition were studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant impact on the performance of TiZO TFTs, and that the TFT developed under 10% oxygen partial pressure exhibits superior performance with a low threshold voltage (V th) of 2.37 V, a high saturation mobility (μsat) of 125.4 cm2 V-1 s-1, a steep subthreshold swing (SS) of 195 mV/decade and a high I on/I off ratio of 3.05 × 108. These results suggest that TiZO thin films are promising for high-performance fully transparent flexible TFTs and displays.

Piezoelectric polymer multilayer on flexible substrate for energy harvesting.

PubMed

Zhang, Lei; Oh, Sharon Roslyn; Wong, Ting Chong; Tan, Chin Yaw; Yao, Kui

2013-09-01

A piezoelectric polymer multilayer structure formed on a flexible substrate is investigated for mechanical energy harvesting under bending mode. Analytical and numerical models are developed to clarify the effect of material parameters critical to the energy harvesting performance of the bending multilayer structure. It is shown that the maximum power is proportional to the square of the piezoelectric stress coefficient and the inverse of dielectric permittivity of the piezoelectric polymer. It is further found that a piezoelectric multilayer with thinner electrodes can generate more electric energy in bending mode. The effect of improved impedance matching in the multilayer polymer on energy output is remarkable. Comparisons between piezoelectric ceramic multilayers and polymer multilayers on flexible substrate are discussed. The fabrication of a P(VDF-TrFE) multilayer structure with a thin Al electrode layer is experimentally demonstrated by a scalable dip-coating process on a flexible aluminum substrate. The results indicate that it is feasible to produce a piezoelectric polymer multilayer structure on flexible substrate for harvesting mechanical energy applicable for many low-power electronics.

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

NASA Astrophysics Data System (ADS)

Elam, Fiona M.; Starostin, Sergey A.; Meshkova, Anna S.; van der Velden-Schuermans, Bernadette C. A. M.; van de Sanden, Mauritius C. M.; de Vries, Hindrik W.

2017-06-01

Industrially and commercially relevant roll-to-roll atmospheric pressure-plasma enhanced chemical vapour deposition was used to synthesize smooth, 80 nm silica-like bilayer thin films comprising a dense ‘barrier layer’ and comparatively porous ‘buffer layer’ onto a flexible polyethylene 2,6 naphthalate substrate. For both layers, tetraethyl orthosilicate was used as the precursor gas, together with a mixture of nitrogen, oxygen and argon. The bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 6.1  ×  10-4 g m-2 d-1 (at 40 °C, 90% relative humidity), thus capable of protecting flexible photovoltaics and thin film transistors from degradation caused by oxygen and water. The presence of the buffer layer within the bilayer architecture was mandatory in order to achieve the excellent encapsulation performance. Atomic force microscopy in addition to solvent permeation measurements, confirmed that the buffer layer prevented the formation of performance-limiting defects in the bilayer thin films, which likely occur as a result of excessive plasma-surface interactions during the deposition process. It emerged that the primary function of the buffer layer was therefore to act as a protective coating for the flexible polymer substrate material.

Wafer-scale design of lightweight and transparent electronics that wraps around hairs

NASA Astrophysics Data System (ADS)

Salvatore, Giovanni A.; Münzenrieder, Niko; Kinkeldei, Thomas; Petti, Luisa; Zysset, Christoph; Strebel, Ivo; Büthe, Lars; Tröster, Gerhard

2014-01-01

Electronics on very thin substrates have shown remarkable bendability, conformability and lightness, which are important attributes for biological tissues sensing, wearable or implantable devices. Here we propose a wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-μm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl- alcohol layer. The thin substrate ensures extreme flexibility, which is demonstrated by transistors that continue to work when wrapped around human hairs. In parallel, the use of amorphous oxide semiconductor and high-K dielectric enables the realization of analogue amplifiers operating at 12 V and above 1 MHz. Electronics can be transferred on any object, surface and on biological tissues like human skin and plant leaves. We foresee a potential application as smart contact lenses, covered with light, transparent and flexible devices, which could serve to monitor intraocular pressure for glaucoma disease.

Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

NASA Astrophysics Data System (ADS)

Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

2017-10-01

We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

Flexible TFTs based on solution-processed ZnO nanoparticles.

PubMed

Jun, Jin Hyung; Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig

2009-12-16

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V(-1) s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.

Flexible thermochromic window based on hybridized VO2/graphene.

PubMed

Kim, Hyeongkeun; Kim, Yena; Kim, Keun Soo; Jeong, Hu Young; Jang, A-Rang; Han, Seung Ho; Yoon, Dae Ho; Suh, Kwang S; Shin, Hyeon Suk; Kim, TaeYoung; Yang, Woo Seok

2013-07-23

Large-scale integration of vanadium dioxide (VO2) on mechanically flexible substrates is critical to the realization of flexible smart window films that can respond to environmental temperatures to modulate light transmittance. Until now, the formation of highly crystalline and stoichiometric VO2 on flexible substrate has not been demonstrated due to the high-temperature condition for VO2 growth. Here, we demonstrate a VO2-based thermochromic film with unprecedented mechanical flexibility by employing graphene as a versatile platform for VO2. The graphene effectively functions as an atomically thin, flexible, yet robust support which enables the formation of stoichiometric VO2 crystals with temperature-driven phase transition characteristics. The graphene-supported VO2 was capable of being transferred to a plastic substrate, forming a new type of flexible thermochromic film. The flexible VO2 films were then integrated into the mock-up house, exhibiting its efficient operation to reduce the in-house temperature under infrared irradiation. These results provide important progress for the fabrication of flexible thermochromic films for energy-saving windows.

Nanostructural Tailoring to Induce Flexibility in Thermoelectric Ca3Co4O9 Thin Films

PubMed Central

2017-01-01

Because of their inherent rigidity and brittleness, inorganic materials have seen limited use in flexible thermoelectric applications. On the other hand, for high output power density and stability, the use of inorganic materials is required. Here, we demonstrate a concept of fully inorganic flexible thermoelectric thin films with Ca3Co4O9-on-mica. Ca3Co4O9 is promising not only because of its high Seebeck coefficient and good electrical conductivity but also because of the abundance, low cost, and nontoxicity of its constituent raw materials. We show a promising nanostructural tailoring approach to induce flexibility in inorganic thin-film materials, achieving flexibility in nanostructured Ca3Co4O9 thin films. The films were grown by thermally induced phase transformation from CaO–CoO thin films deposited by reactive rf-magnetron cosputtering from metallic targets of Ca and Co to the final phase of Ca3Co4O9 on a mica substrate. The pattern of nanostructural evolution during the solid-state phase transformation is determined by the surface energy and strain energy contributions, whereas different distributions of CaO and CoO phases in the as-deposited films promote different nanostructuring during the phase transformation. Another interesting fact is that the Ca3Co4O9 film is transferable onto an arbitrary flexible platform from the parent mica substrate by etch-free dry transfer. The highest thermoelectric power factor obtained is above 1 × 10–4 W m–1 K–2 in a wide temperature range, thus showing low-temperature applicability of this class of materials. PMID:28699345

OP-AMPS on Flexible Substrates with Printable Materials

DTIC Science & Technology

2011-08-10

Zinc Tin Oxide Thin - Film - Transistor Enhancement...II196, 2010. [3] D. Geng, D. H. Kang, and J. Jang, "High-Performance Amorphous Indium-Gallium- Zinc - Oxide Thin - Film Transistor With a Self-Aligned...B., Dodabalapur, A., “Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin - film transistors ”, Applied

Study on Evaluation Methods for Mechanical Properties of Organic Semiconductor Materials

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Yokoyama, T.; Utsumi, Y.; Kanematsu, H.; Masuda, T.

2013-04-01

This paper describes the evaluation method of the mechanical properties of the materials constituting organic semiconductor, and the test result of the relation between applied strain and the fracture of thin films. The final target of this work is the improvement of flexibility of organic light emitting diode(OLED), the tensile test of the thin films coated on flexible substrate is conducted, and the vulnerable parts of the constituent material of the OLED is quantitatively understood, further the guideline for designing OLED structure will be obtained. In the present paper, tensile test of an aluminium oxide thin films deposited on a poly-ethylene-tere-phtalate (PET) substrate was carried out under constant conditions, the following results were obtained:(1)Cracking of the aluminium oxide thin films was observed using an optical transparent formula microscope at more than 40 times magnification; (2)Cracking was initiated at a strain of about 3%; (3)the number of cracks increased proportional to the strain, and saturated at about 9% strain; (4)Organic thin films α-NPD caused the same cracking as oxide thin films.

Ductile film delamination from compliant substrates using hard overlayers

PubMed Central

Cordill, M.J.; Marx, V.M.; Kirchlechner, C.

2014-01-01

Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems. PMID:25641995

Ductile film delamination from compliant substrates using hard overlayers.

PubMed

Cordill, M J; Marx, V M; Kirchlechner, C

2014-11-28

Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems.

Nanocrystal-based complementary inverters constructed on flexible plastic substrates.

PubMed

Jang, Jaewon; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig

2013-05-01

We demonstrate a nanocrystal (NC)-based complementary inverter constructed on a flexible plastic substrate. The NC-based complementary inverter consists of n-type HgSe NC- and p-type HgTe NC-based thin-film transistors (TFTs). Solid films on a plastic substrate obtained from HgSe and HgTe nanocrystals by thermal transformation are utilized as the n- and p-channel layers in these TFTs, respectively. The electrical properties of these component TFTs on unstrained and strained substrates are characterized and the performance of the inverter on the flexible substrate is investigated. The inverter on the unstrained substrate exhibits a logic gain of about 8, a logic swing of 90%, and a noise margin of 2.0 V. The characteristics of the inverter are changed under tensile and compressive strains, but not very significantly. Moreover, a comparison of the electrical characteristics of the n- and p-channel TFTs and the inverter is made in this paper.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

PubMed

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Fully integrated carbon nanotube composite thin film strain sensors on flexible substrates for structural health monitoring

NASA Astrophysics Data System (ADS)

Burton, A. R.; Lynch, J. P.; Kurata, M.; Law, K. H.

2017-09-01

Multifunctional thin film materials have opened many opportunities for novel sensing strategies for structural health monitoring. While past work has established methods of optimizing multifunctional materials to exhibit sensing properties, comparatively less work has focused on their integration into fully functional sensing systems capable of being deployed in the field. This study focuses on the advancement of a scalable fabrication process for the integration of multifunctional thin films into a fully integrated sensing system. This is achieved through the development of an optimized fabrication process that can create a broad range of sensing systems using multifunctional materials. A layer-by-layer deposited multifunctional composite consisting of single walled carbon nanotubes (SWNT) in a polyvinyl alcohol and polysodium-4-styrene sulfonate matrix are incorporated with a lithography process to produce a fully integrated sensing system deposited on a flexible substrate. To illustrate the process, a strain sensing platform consisting of a patterned SWNT-composite thin film as a strain-sensitive element within an amplified Wheatstone bridge sensing circuit is presented. Strain sensing is selected because it presents many of the design and processing challenges that are core to patterning multifunctional thin film materials into sensing systems. Strain sensors fabricated on a flexible polyimide substrate are experimentally tested under cyclic loading using standard four-point bending coupons and a partial-scale steel frame assembly under lateral loading. The study reveals the material process is highly repeatable to produce fully integrated strain sensors with linearity and sensitivity exceeding 0.99 and 5 {{V}}/{ε }, respectively. The thin film strain sensors are robust and are capable of high strain measurements beyond 3000 μ {ε }.

Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

PubMed

Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

2011-09-18

Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

Flexible microstrip antenna based on carbon nanotubes/(ethylene-octene copolymer) thin composite layer deposited on PET substrate

NASA Astrophysics Data System (ADS)

Matyas, J.; Olejnik, R.; Slobodian, P.

2017-12-01

A most of portable devices, such as mobile phones, tablets, uses antennas made of cupper. In this paper we demonstrate possible use of electrically conductive polymer composite material for such antenna application. Here we describe the method of preparation and properties of the carbon nanotubes (CNTs)/(ethylene-octene copolymer) as flexible microstrip antenna. Carbon nanotubes dispersion in (ethylene-octene copolymer) toluene solution was prepared by ultrasound finally coating PET substrate by method of dip-coating. Main advantages of PET substrate are low weight and also flexibility. The final size of flexible microstrip antenna was 5 x 50 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with the weight of only 0.402 g. Antenna operates at three frequencies 1.66 GHz (-6.51 dB), 2.3 GHz (-13 dB) and 2.98 GHz (-33.59 dB).

High-speed thin-film transistors on single-crystalline, unstrained- and strained-silicon-based nanomembranes

NASA Astrophysics Data System (ADS)

Yuan, Hao-Chih

This research focuses on developing high-performance single-crystal Si-based nanomembranes and high-frequency thin-film transistors (TFTs) using these nanomembranes on flexible plastic substrates. Unstrained Si or SiGe nanomembranes with thickness of several tens to a couple of hundred nanometers are derived from silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) and are subsequently transferred and integrated with flexible plastic host substrates via a one-step dry printing technique. Biaxial tensile-strained Si membranes that utilize elastic strain-sharing between Si and additionally grown SiGe thin films are also successfully integrated with plastic host substrates and exhibit predicted strain status and negligible density of dislocations. Biaxial tensile strain enhances electron mobility and lowers Schottky contact resistance. As a result, flexible TFTs built on the strained Si-membranes demonstrate much higher electron effective mobility and higher drive current than the unstrained counterpart. The dependence of drive current and transconductance on uniaxial tensile strain introducing by mechanical bending is also discussed. A novel combined "hot-and-cold" TFT fabrication process is developed specifically for realizing a wide spectrum of micro-electronics that can exhibit RF performance and can be integrated on low-temperature plastic substrate. The "hot" process that consists of ion implant and high-temperature annealing for desired doping type, profile, and concentration is realized on the bulk SOI/SGOI substrates followed by the "cold" process that includes room-temperature silicon-monoxide (SiO) deposition as gate dielectric layer to ensure the process compatibility with low-temperature, low-cost plastics. With these developments flexible Si-membrane n-type RF TFTs for analog applications and complementary TFTs for digital applications are demonstrated for the first time. RF TFTs with 1.5-mum channel length have demonstrated record-high f T and fmax values of 2.04 and 7.8 GHz, respectively. A small-signal equivalent circuit model study on the RF TFTs reveals the physics of how device layout affects fT and f max, which paves the way for further performance optimization and realization of integrated circuit on flexible substrate in the future.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

A general strategy for hybrid thin film fabrication and transfer onto arbitrary substrates.

PubMed

Zhang, Yong; Magan, John J; Blau, Werner J

2014-04-28

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 10(4) S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices.

A General Strategy for Hybrid Thin Film Fabrication and Transfer onto Arbitrary Substrates

PubMed Central

Zhang, Yong; Magan, John J.; Blau, Werner J.

2014-01-01

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 104 S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices. PMID:24769689

Flexible anodized aluminum oxide membranes with customizable back contact materials

NASA Astrophysics Data System (ADS)

Nadimpally, B.; Jarro, C. A.; Mangu, R.; Rajaputra, S.; Singh, V. P.

2016-12-01

Anodized aluminum oxide (AAO) membranes were fabricated using flexible substrate/carrier material. This method facilitates the use of AAO templates with many different materials as substrates that are otherwise incompatible with most anodization techniques. Thin titanium (Ti) and tungsten (W) layers were employed as interlayer materials. Titanium enhances adhesion. Tungsten not only helps eliminate the barrier layer but also plays a critical role in enabling the use of flexible substrates. The resulting flexible templates provide new, exciting opportunities in photovoltaic and other device applications. CuInSe2 nanowires were electrochemically deposited into porous AAO templates with molybdenum (Mo) as the back contact material. The feasibility of using any material to form a contact with semiconductor nanowires has been demonstrated for the first time enabling new avenues in photovoltaic applications.

Ultrathin (<1 μm) Substrate-Free Flexible Photodetector on Quantum Dot-Nanocellulose Paper

PubMed Central

Wu, Jingda; Lin, Lih Y.

2017-01-01

Conventional approaches to flexible optoelectronic devices typically require depositing the active materials on external substrates. This is mostly due to the weak bonding between individual molecules or nanocrystals in the active materials, which prevents sustaining a freestanding thin film. Herein we demonstrate an ultrathin freestanding ZnO quantum dot (QD) active layer with nanocellulose structuring, and its corresponding device fabrication method to achieve substrate-free flexible optoelectronic devices. The ultrathin ZnO QD-nanocellulose composite is obtained by hydrogel transfer printing and solvent-exchange processes to overcome the water capillary force which is detrimental to achieving freestanding thin films. We achieved an active nanocellulose paper with ~550 nm thickness, and >91% transparency in the visible wavelength range. The film retains the photoconductive and photoluminescent properties of ZnO QDs and is applied towards substrate-free Schottky photodetector applications. The device has an overall thickness of ~670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowledge, and functions as a self-powered visible-blind ultraviolet photodetector. This platform can be readily applied to other nano materials as well as other optoelectronic device applications. PMID:28266651

Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material.

PubMed

Shih, Cheng Wei; Chin, Albert

2017-04-25

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm 2 /Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 10 6 , and a low drain-voltage (V D ) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

Fully Printed, Flexible, Phased Array Antenna for Lunar Surface Communication

NASA Technical Reports Server (NTRS)

Subbaraman, Harish; Hen, Ray T.; Lu, Xuejun; Chen, Maggie Yihong

2013-01-01

NASAs future exploration missions focus on the manned exploration of the Moon, Mars, and beyond, which will rely heavily on the development of a reliable communications infrastructure from planetary surface-to-surface, surface-to-orbit, and back to Earth. Flexible antennas are highly desired in many scenarios. Active phased array antennas (active PAAs) with distributed control and processing electronics at the surface of an antenna aperture offer numerous advantages for radar communications. Large-area active PAAs on flexible substrates are of particular interest in NASA s space radars due to their efficient inflatable package that can be rolled up during transportation and deployed in space. Such an inflatable package significantly reduces stowage volume and mass. Because of these performance and packaging advantages, large-area inflatable active PAAs are highly desired in NASA s surface-to-orbit and surface-to-relay communications. To address the issues of flexible electronics, a room-temperature printing process of active phased-array antennas on a flexible Kapton substrate was developed. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proved feasible for the PAA system. This innovation is a new type of fully inkjet-printable, two-dimensional, high-frequency PAA on a flexible substrate at room temperature. The designed electronic circuit components, such as the FET switches in the phase shifter, metal interconnection lines, microstrip transmission lines, etc., are all printed using a special inkjet printer. Using the developed technology, entire 1x4, 2x2, and 4x4 PAA systems were developed, packaged, and demonstrated at 5.3 GHz. Several key solutions are addressed in this work to solve the fabrication issues. The source/drain contact is developed using droplets of silver ink printed on the source/drain areas prior to applying CNT thin-film. The wet silver ink droplets allow the silver to wet the CNT thin-film area and enable good contact with the source and drain contact after annealing. A passivation layer to protect the device channel is developed by bonding a thin Kapton film on top of the device channel. This film is also used as the media for transferring the aligned CNT thin-film on the device substrate. A simple and cost-effective technique to form multilayer metal interconnections on flexible substrate is developed and demonstrated. Contact vias are formed on the second substrate prior to bonding on the first substrate. Inkjet printing is used to fill the silver ink into the via structure. The printed silver ink penetrates through the vias to contact with the contact pads on the bottom layer. It is then annealed to form a good connection. One-dimensional and two-dimensional PAAs were fabricated and characterized. In these circuits, multilayer metal interconnects were used to make a complete PAA system.

Thin PDMS Films Using Long Spin Times or Tert-Butyl Alcohol as a Solvent

PubMed Central

Koschwanez, John H.; Carlson, Robert H.; Meldrum, Deirdre R.

2009-01-01

Thin polydimethylsiloxane (PDMS) films are frequently used in “lab on a chip” devices as flexible membranes. The common solvent used to dilute the PDMS for thin films is hexane, but hexane can swell the underlying PDMS substrate. A better solvent would be one that dissolves uncured PDMS but doesn't swell the underlying substrate. Here, we present protocols and spin curves for two alternatives to hexane dilution: longer spin times and dilution in tert-butyl alcohol. The thickness of the PDMS membranes under different spin speeds, spin times, and PDMS concentrations was measured using an optical profilometer. The use of tert-butyl alcohol to spin thin PDMS films does not swell the underlying PDMS substrate, and we have used these films to construct multilayer PDMS devices. PMID:19238212

Active-matrix OLED using 150°C a-Si TFT backplane built on flexible plastic substrate

NASA Astrophysics Data System (ADS)

Sarma, Kalluri R.; Chanley, Charles; Dodd, Sonia R.; Roush, Jared; Schmidt, John; Srdanov, Gordana; Stevenson, Matthew; Wessel, Ralf; Innocenzo, Jeffrey; Yu, Gang; O'Regan, Marie B.; MacDonald, W. A.; Eveson, R.; Long, Ke; Gleskova, Helena; Wagner, Sigurd; Sturm, James C.

2003-09-01

Flexible displays fabricated using plastic substrates have a potential for being very thin, light weight, highly rugged with greatly minimized propensity for breakage, roll-to-roll manufacturing and lower cost. The emerging OLED display media offers the advantage of being a solid state and rugged structure for flexible displays in addition to the many potential advantages of an AM OLED over the currently dominant AM LCD. The current high level of interest in flexible displays is facilitating the development of the required enabling technologies which include development of plastic substrates, low temperature active matrix device and backplane fabrication, and display packaging. In the following we will first discuss our development efforts in the PEN based plastic substrates, active matrix backplane technology, low temperature (150°C) a-Si TFT devices and an AM OLED test chip used for evaluating various candidate designs. We will then describe the design, fabrication and successful evaluation and demonstration of a 64x64 pixel AM OLED test display using a-Si TFT backplane fabricated at 150°C on the flexible plastic substrate.

One-Step Laser Patterned Highly Uniform Reduced Graphene Oxide Thin Films for Circuit-Enabled Tattoo and Flexible Humidity Sensor Application.

PubMed

Park, Rowoon; Kim, Hyesu; Lone, Saifullah; Jeon, Sangheon; Kwon, Young Woo; Shin, Bosung; Hong, Suck Won

2018-06-06

The conversion of graphene oxide (GO) into reduced graphene oxide (rGO) is imperative for the electronic device applications of graphene-based materials. Efficient and cost-effective fabrication of highly uniform GO films and the successive reduction into rGO on a large area is still a cumbersome task through conventional protocols. Improved film casting of GO sheets on a polymeric substrate with quick and green reduction processes has a potential that may establish a path to the practical flexible electronics. Herein, we report a facile deposition process of GO on flexible polymer substrates to create highly uniform thin films over a large area by a flow-enabled self-assembly approach. The self-assembly of GO sheets was successfully performed by dragging the trapped solution of GO in confined geometry, which consisted of an upper stationary blade and a lower moving substrate on a motorized translational stage. The prepared GO thin films could be selectively reduced and facilitated from the simple laser direct writing process for programmable circuit printing with the desired configuration and less sample damage due to the non-contact mode operation without the use of photolithography, toxic chemistry, or high-temperature reduction methods. Furthermore, two different modes of the laser operating system for the reduction of GO films turned out to be valuable for the construction of novel graphene-based high-throughput electrical circuit boards compatible with integrating electronic module chips and flexible humidity sensors.

Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

NASA Astrophysics Data System (ADS)

You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei; Zhang, Han-Yue; Zhang, Wan-Ying; Zhang, Yi; Ye, Heng-Yun; Nakamura, Takayoshi; Xiong, Ren-Gen

2017-04-01

Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

NASA Technical Reports Server (NTRS)

Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

2005-01-01

The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-06-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solid-electrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-04-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

Single-crystal-like, c-axis oriented BaTiO3 thin films with high-performance on flexible metal templates for ferroelectric applications

NASA Astrophysics Data System (ADS)

Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Kim, Dae Ho

2009-06-01

Epitaxial, c-axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ˜11.5 μC/cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.

Metal Oxide Thin Film Transistors on Paper Substrate: Fabrication, Characterization, and Printing Process

NASA Astrophysics Data System (ADS)

Choi, Nack-Bong

Flexible electronics is an emerging next-generation technology that offers many advantages such as light weight, durability, comfort, and flexibility. These unique features enable many new applications such as flexible display, flexible sensors, conformable electronics, and so forth. For decades, a variety of flexible substrates have been demonstrated for the application of flexible electronics. Most of them are plastic films and metal foils so far. For the fundamental device of flexible circuits, thin film transistors (TFTs) using poly silicon, amorphous silicon, metal oxide and organic semiconductor have been successfully demonstrated. Depending on application, low-cost and disposable flexible electronics will be required for convenience. Therefore it is important to study inexpensive substrates and to explore simple processes such as printing technology. In this thesis, paper is introduced as a new possible substrate for flexible electronics due to its low-cost and renewable property, and amorphous indium gallium zinc oxide (a-IGZO) TFTs are realized as the promising device on the paper substrate. The fabrication process and characterization of a-IGZO TFT on the paper substrate are discussed. a-IGZO TFTs using a polymer gate dielectric on the paper substrate demonstrate excellent performances with field effect mobility of ˜20 cm2 V-1 s-1, on/off current ratio of ˜106, and low leakage current, which show the enormous potential for flexible electronics application. In order to complement the n-channel a-IGZO TFTs and then enable complementary metal-oxide semiconductor (CMOS) circuit architectures, cuprous oxide is studied as a candidate material of p-channel oxide TFTs. In this thesis, a printing process is investigated as an alternative method for the fabrication of low-cost and disposable electronics. Among several printing methods, a modified offset roll printing that prints high resolution patterns is presented. A new method to fabricate a high resolution printing plate is investigated and the most favorable condition to transfer ink from a blanket to a cliche is studied. Consequently, a high resolution cliche is demonstrated and the printed patterns of 10mum width and 6mum line spacing are presented. In addition, the top gate a-IGZO TFTs with channel width/length of 12/6mum is successfully demonstrated by printing etch-resists. This work validates the compatibility of a-IGZO TFT on paper substrate for the disposable microelectronics application and presents the potential of low-cost and high resolution printing technology.

Thin film encapsulation for flexible AM-OLED: a review

NASA Astrophysics Data System (ADS)

Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

2011-03-01

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

Flexible magnetic thin films and devices

NASA Astrophysics Data System (ADS)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

Branching out in locomotion: the mechanics of perch use in birds and primates.

PubMed

Bonser, R H

1999-06-01

Many animals use thin perches, such as the branches of trees, as locomotory substrates. In this paper, I have reviewed the literature concerned with measurements of locomotory forces made by birds and primates on thin and flexible substrates. Through a knowledge of the locomotory forces exerted by animals when using different substrates, the mechanical cost of their use can be established. We are just beginning to learn about the magnitude and patterns of force production in various branch-using vertebrates, primarily as a result of the development of instrumented perches. Instrumented perches have been designed to measure the forces produced by birds and primates when leaping from rigid and flexible horizontal and flexible vertical perches, and also from instrumented handgrips during brachiation. The development of these techniques for birds and primates allows us to compare the way in which they use perches as locomotory substrates. In both birds and primates, the magnitudes of landing forces are smaller than those during take-off. Two explanations have been proposed; the difference is either a consequence of perch compliance or it is a strategic decision to be cautious of 'new' perches. Leaps from flexible perches may be somewhat inefficient because considerable energy is dissipated in bending the perch, and this energy may remain unrecovered when the animal leaves contact with the perch.

Advances in all-sputtered CdTe solar cells on flexible substrates

NASA Astrophysics Data System (ADS)

Wieland, Kristopher; Mahabaduge, Hasitha; Vasko, Anthony; Compaan, Alvin

2010-03-01

The University of Toledo II-VI semiconductor group has developed magnetron sputtering (MS) for the deposition of thin films of CdS, CdTe, and related materials for photovoltaic applications. On glass superstrates, we have reached air mass 1.5 efficiencies of 14%.[1] Recently we have studied the use of MS for the fabrication of thin-film CdS/CdTe cells on flexible polyimide superstrates. This takes advantage of the high film quality that can be achieved at substrate temperatures below 300 C when RF MS is used. Our recent CdS/CdTe solar cells have reached 10.5% on flexible polyimide substrates. [2] This all-sputtered cell (except for back contact) has a structure of polyimide/ZnO:Al/ZnO/CdS/CdTe/Cu/Au. The physics of this device will be discussed through the use of spectral quantum efficiency and current-voltage measurements as a function of CdTe layer thickness. Pathways toward further increases in device efficiencies will also be discussed. [1] Appl. Phys. Lett. 85, 684 (2004) [2] Phys. Stat. Sol. (B) 241, No. 3, 779--782 (2004)

Colorless polyimide/organoclay nanocomposite substrates for flexible organic light-emitting devices.

PubMed

Kim, Jin-Hoe; Choi, Myeon-Chon; Kim, Hwajeong; Kim, Youngkyoo; Chang, Jin-Hae; Han, Mijeong; Kim, Il; Ha, Chang-Sik

2010-01-01

We report the preparation and application of indium tin oxide (ITO) coated fluorine-containing polyimide/organoclay nanocomposite substrate. Fluorine-containing polyimide/organoclay nanocomposite films were prepared through thermal imidization of poly(amic acid)/organoclay mixture films, whilst on which ITO thin films were coated on the films using a radio-frequency planar magnetron sputtering by varying the substrate temperature and the ITO thickness. Finally the ITO coated fluorine-containing polyimide/organoclay nanocomposite substrate was employed to make flexible organic light-emitting devices (OLED). Results showed that the lower sheet resistance was achieved when the substrate temperature was high and the ITO film was thick even though the optical transmittance was slightly lowered as the thickness increased. approximately 10 nm width ITO nanorods were found for all samples but the size of clusters with the nanorods was generally increased with the substrate temperature and the thickness. The flexible OLED made using the present substrate was quite stable even when the device was extremely bended.

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

PubMed

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (<10 V). In addition, outstanding mechanical flexibility of printed nanotube thin-film transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

Graphene-based flexible and stretchable thin film transistors.

PubMed

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

Synthesis of ZnO nanowires for thin film network transistors

NASA Astrophysics Data System (ADS)

Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

2008-08-01

Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

Development of Flexible Multilayer Circuits and Cables

NASA Technical Reports Server (NTRS)

Barnes, Kevin N.; Bryant, Robert; Holloway, Nancy; Draughon, Fred

2005-01-01

A continuing program addresses the development of flexible multilayer electronic circuits and associated flexible cables. This development is undertaken to help satisfy aerospace-system-engineering requirements for efficient, lightweight electrical and electronic subsystems that can fit within confined spaces, adhere to complexly shaped surfaces, and can be embedded within composite materials. Heretofore, substrate layers for commercial flexible circuitry have been made from sheets of Kapton (or equivalent) polyimide and have been bonded to copper conductors and to other substrate layers by means of adhesives. The substrates for the present developmental flexible circuitry are made from thin films of a polyimide known as LaRC(TM)-SI. This polyimide is thermoplastic and, therefore, offers the potential to eliminate delamination and the need for adhesives. The development work undertaken thus far includes experiments in the use of several techniques of design and fabrication (including computer-aided design and fabrication) of representative flexible circuits. Anticipated future efforts would focus on multilayer bonding, fabrication of prototypes, and overcoming limitations.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Amorphous silicon and organic thin film transistors for electronic applications

NASA Astrophysics Data System (ADS)

Zhou, Lisong

Recently, flexible thin film electronics has attracted huge research interest, and as now, many prototypes are being developed and demonstrated by companies around the world, including displays, logic circuit, and solar cells. Flexible electronics offers many potential advantages: it can not only generate new functions like flexible displays or solar cells, also allow very low cost manufacturing through the use of cheap polymeric substrates and roll-to-roll fabrication. a-Si:H TFT fabrications are compatible with flexible polyimide substrate materials. With the interests in the space environment, for the first time, we tested the performance changes of flexible a-Si:H TFTs, on polyimide substrates, due to irradiation and mechanical stress. Significant changes were found on TFTs after irradiation with fast electrons, which, however, was essentially removed by post-irradiation thermal annealing. On the other hand, few changes were found in TFTs by mechanical stress. These preliminary results indicate that it can be readily engineered for space applications. Furthermore, for the first time, we designed and fabricated ungated n+ muC-Si and gated a-Si:H strain sensors on flexible polyimide substrates. Compared with commercial metallic foil strain sensors, ungated muC-Si sensors and gated a-Si:H sensors are two orders of magnitude smaller in area and consume two orders or magnitude less power. Integration with a-Si:H TFTs can also allow large arrays of strain sensors to be fabricated. To take advantage of lower glass-transition-temperature polymeric substrate materials, reduced processing temperature is desired. The 150°C low-temperature deposition process is achieved by using hydrogen dilution in the PECVD process. The TFT performance and bias stability property are tested similar to that of a 250°C process. These results suggest its viability for practical applications. For even lower process temperature, we have considered organic TFTs. As a practical demonstration, we integrated pentacene TFTs with OLEDs in a simple display. Pentacene TFT passivation techniques were researched, and a PVA and parylene bilayer structure was used. We designed and demonstrated 48 x 48-pixel active matrix OTFTOLED displays, and to our best knowledge, they are the largest on glass substrates and the first on flexible PET substrates. Device performance, uniformity and stability are also compared. These results demonstrate that pentacene TFTs are viable candidates for active-matrix OLED displays and other flexible electronics applications.

Investigation of the structural, optical and piezoelectric properties of ALD ZnO films on PEN substrates

NASA Astrophysics Data System (ADS)

Blagoev, B. S.; Aleksandrova, M.; Terziyska, P.; Tzvetkov, P.; Kovacheva, D.; Kolev, G.; Mehandzhiev, V.; Denishev, K.; Dimitrov, D.

2018-03-01

We present the results of studies on the structural, optical and piezoelectric properties of ZnO thin films deposited by ALD on flexible polyethylene naphthalate (PEN) substrates. Changes were observed in the optical transmission and crystal structures as the deposition temperature was varied. The electromechanical behavior, dielectric losses and voltage generated from ZnO flexible devices were investigated and discussed, in order to estimate their suitability for potential application as microgenerators activated by human motion.

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

NASA Technical Reports Server (NTRS)

Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

2007-01-01

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Better Back Contacts for Solar Cells on Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Ribelin, Rosine M.

2006-01-01

Improved low-resistance, semitransparent back contacts, and a method of fabricating them, have been developed for solar photovoltaic cells that are made from thin films of I-III-VI2 semiconductor materials on flexible, high-temperatureresistant polyimide substrates or superstrates. The innovative aspect of the present development lies in the extension, to polyimide substrates or superstrates, of a similar prior development of improved low-resistance, semitransparent back contacts for I-III-VI2 solar cells on glass substrates or superstrates. A cell incorporating this innovation can be used either as a stand-alone photovoltaic device or as part of a monolithic stack containing another photovoltaic device that utilizes light of longer wavelengths.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

NASA Astrophysics Data System (ADS)

Zeng, Yong; Ning, Honglong; Zheng, Zeke; Zhang, Hongke; Fang, Zhiqiang; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao; Lu, Xubing

2017-04-01

Thermal annealing is a conventional and effective way to improve the bias stress stability of oxide thin film transistors (TFT) on solid substrates. However, it is still a challenge for enhancing the bias stress stability of oxide TFTs on flexible substrates by high-temperature post-treatment due to the thermal sensitivity of flexible substrates. Here, a room temperature strategy is presented towards enhanced performance and bias stability of oxide TFTs by intentionally engineering a sandwich structure channel layer consisting of a superlattice with aluminum doped zinc oxide (AZO) and Al2O3 thin films. The Al2O3/AZO/Al2O3-TFTs not only exhibit a saturation mobility of 9.27 cm2 V-1 s-1 and a linear mobility of 11.38 cm2 V-1 s-1 but also demonstrate a better bias stress stability than AZO/Al2O3-TFT. Moreover, the underlying mechanism of this enhanced electrical performance of TFTs with a sandwich structure channel layer is that the bottom Al2O3 thin films can obviously improve the crystalline phase of AZO films while decreasing electrical trapping centers and adsorption sites for undesirable molecules such as water and oxygen.

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

Recent progress of flexible AMOLED displays

NASA Astrophysics Data System (ADS)

Pang, Huiqing; Rajan, Kamala; Silvernail, Jeff; Mandlik, Prashant; Ma, Ruiqing; Hack, Mike; Brown, Julie J.; Yoo, Juhn S.; Jung, Sang-Hoon; Kim, Yong-Cheol; Byun, Seung-Chan; Kim, Jong-Moo; Yoon, Soo-Young; Kim, Chang-Dong; Hwang, Yong-Kee; Chung, In-Jae; Fletcher, Mark; Green, Derek; Pangle, Mike; McIntyre, Jim; Smith, Randal D.

2011-03-01

Significant progress has been made in recent years in flexible AMOLED displays and numerous prototypes have been demonstrated. Replacing rigid glass with flexible substrates and thin-film encapsulation makes displays thinner, lighter, and non-breakable - all attractive features for portable applications. Flexible AMOLEDs equipped with phosphorescent OLEDs are considered one of the best candidates for low-power, rugged, full-color video applications. Recently, we have demonstrated a portable communication display device, built upon a full-color 4.3-inch HVGA foil display with a resolution of 134 dpi using an all-phosphorescent OLED frontplane. The prototype is shaped into a thin and rugged housing that will fit over a user's wrist, providing situational awareness and enabling the wearer to see real-time video and graphics information.

Ultraclean and Direct Transfer of a Wafer-Scale MoS2 Thin Film onto a Plastic Substrate.

PubMed

Phan, Hoang Danh; Kim, Youngchan; Lee, Jinhwan; Liu, Renlong; Choi, Yongsuk; Cho, Jeong Ho; Lee, Changgu

2017-02-01

An ultraclean method to directly transfer a large-area MoS 2 film from the original growth substrate to a flexible substrate by using epoxy glue is developed. The transferred film is observed to be free of wrinkles and cracks and to be as smooth as the film synthesized on the original substrate. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New developments in flexible cholesteric liquid crystal displays

NASA Astrophysics Data System (ADS)

Schneider, Tod; Davis, Donald J.; Franklin, Sean; Venkataraman, Nithya; McDaniel, Diaz; Nicholson, Forrest; Montbach, Erica; Khan, Asad; Doane, J. William

2007-02-01

Flexible Cholesteric liquid crystal displays have been rapidly maturing into a strong contender in the flexible display market. Encapsulation of the Cholesteric liquid crystal permits the use of flexible plastic substrates and roll-to-roll production. Recent advances include ultra-thin displays, laser-cut segmented displays of variable geometry, and smart card applications. Exciting technologies such as simultaneous laser-edge sealing and singulation enable high volume production, excellent quality control and non-traditional display geometries and formats.

Studies on modification of ZnO sol-gel spin coated on flexible substrate at low temperature: Effect of time exposure

NASA Astrophysics Data System (ADS)

Kamardin, Ili Liyana Khairunnisa; Ainuddin, Ainun Rahmahwati

2017-04-01

Transparent Conducting Oxide (TCO) Film has been chosen as flexible substrate recently in the application of a device. One of the TCO mostly used is ITO/PET substrates. Through this communication, the effect of time exposure of ZnO thin film by modified sol-gel deposited on flexible substrates was investigated. 0.75 M of NaOH and C6H8O7 were dropped directly into precursor solution right before aging process in order to modified precursor solution environment condition. x-ray diffraction pattern recorded plane (100) and (101) as preferential growth orientation. The (101) plane was selected to calculate the average crystallite. The atomic force microscopy indicated RMS value for NaOH samples increased with time exposure. Meanwhile, for C6H8O7 samples decreased with hot water treatment time exposure.

Recent progress in flexible OLED displays

NASA Astrophysics Data System (ADS)

Hack, Michael G.; Weaver, Michael S.; Mahon, Janice K.; Brown, Julie J.

2001-09-01

Organic light emitting device (OLED) technology has recently been shown to demonstrate excellent performance and cost characteristics for use in numerous flat panel display (FPD) applications. OLED displays emit bright, colorful light with excellent power efficiency, wide viewing angle and video response rates. OLEDs are also demonstrating the requisite environmental robustness for a wide variety of applications. OLED technology is also the first FPD technology with the potential to be highly functional and durable in a flexible format. The use of plastic and other flexible substrate materials offers numerous advantages over commonly used glass substrates, including impact resistance, light weight, thinness and conformability. Currently, OLED displays are being fabricated on rigid substrates, such as glass or silicon wafers. At Universal Display Corporation (UDC), we are developing a new class of flexible OLED displays (FOLEDs). These displays also have extremely low power consumption through the use of electrophosphorescent doped OLEDs. To commercialize FOLED technology, a number of technical issues related to packaging and display processing on flexible substrates need to be addressed. In this paper, we report on our recent results to demonstrate the key technologies that enable the manufacture of power efficient, long-life flexible OLED displays for commercial and military applications.

Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Harris, Jerry D.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Smith, Mark A.; Cowen, Jonathan E.

2001-01-01

The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Flexible digital x-ray technology for far-forward remote diagnostic and conformal x-ray imaging applications

NASA Astrophysics Data System (ADS)

Smith, Joseph; Marrs, Michael; Strnad, Mark; Apte, Raj B.; Bert, Julie; Allee, David; Colaneri, Nicholas; Forsythe, Eric; Morton, David

2013-05-01

Today's flat panel digital x-ray image sensors, which have been in production since the mid-1990s, are produced exclusively on glass substrates. While acceptable for use in a hospital or doctor's office, conventional glass substrate digital x-ray sensors are too fragile for use outside these controlled environments without extensive reinforcement. Reinforcement, however, significantly increases weight, bulk, and cost, making them impractical for far-forward remote diagnostic applications, which demand rugged and lightweight x-ray detectors. Additionally, glass substrate x-ray detectors are inherently rigid. This limits their use in curved or bendable, conformal x-ray imaging applications such as the non-destructive testing (NDT) of oil pipelines. However, by extending low-temperature thin-film transistor (TFT) technology previously demonstrated on plastic substrate- based electrophoretic and organic light emitting diode (OLED) flexible displays, it is now possible to manufacture durable, lightweight, as well as flexible digital x-ray detectors. In this paper, we discuss the principal technical approaches used to apply flexible display technology to two new large-area flexible digital x-ray sensors for defense, security, and industrial applications and demonstrate their imaging capabilities. Our results include a 4.8″ diagonal, 353 x 463 resolution, flexible digital x-ray detector, fabricated on a 6″ polyethylene naphthalate (PEN) plastic substrate; and a larger, 7.9″ diagonal, 720 x 640 resolution, flexible digital x-ray detector also fabricated on PEN and manufactured on a gen 2 (370 x 470 mm) substrate.

Pulsed laser deposition of plasmonic nanostructured gold on flexible transparent polymers at atmospheric pressure

NASA Astrophysics Data System (ADS)

McCann, Ronán; Hughes, Cian; Bagga, Komal; Stalcup, Apryll; Vázquez, Mercedes; Brabazon, Dermot

2017-06-01

In this paper, we outline a novel technique for the deposition of nanostructured thin films utilizing a modified form of pulsed laser deposition (PLD). We demonstrate confined atmospheric PLD (CAP) for the deposition of gold on cyclic olefin polymer substrates. The deposition process is a simplified form of conventional PLD, with deposition conducted under atmospheric conditions and the substrate and target in close proximity. It was found that this confinement results in the deposition of nanostructured thin films on the substrate. Infrared spectroscopy showed no significant change of polymer surface chemistry as a result of the deposition process, and optical spectroscopy revealed plasmonic behavior of the resulting thin film. The effect of laser fluence on the deposition process was also examined with more uniform films deposited at higher fluences.

Flexible copper-indium-diselenide films and devices for space applications

NASA Technical Reports Server (NTRS)

Armstrong, J. H.; Pistole, C. O.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

1991-01-01

With the ever increasing demands on space power systems, it is imperative that low cost, lightweight, reliable photovoltaics be developed. One avenue of pursuit for future space power applications is the use of low cost, lightweight flexible PV cells and arrays. Most work in this area assumes the use of flexible amorphous silicon (a-Si), despite its inherent instability and low efficiencies. However, polycrystalline thin film PV such as copper-indium-diselenide (CIS) are inherently more stable and exhibit better performance than a-Si. Furthermore, preliminary data indicate that CIS also offers exciting properties with respect to space applications. However, CIS has only heretofore only produced on rigid substrates. The implications of flexible CIS upon present and future space power platforms was explored. Results indicate that space qualified CIS can dramatically reduce the cost of PV, and in most cases, can be substituted for silicon (Si) based on end-of-life (EOL) estimations. Furthermore, where cost is a prime consideration, CIS can become cost effective than gallium arsenide (GaAs) in some applications. Second, investigations into thin film deposition on flexible substrates were made, and data from these tests indicate that fabrication of flexible CIS devices is feasible. Finally, data is also presented on preliminary TCO/CdS/CuInSe2/Mo devices.

Flexible fluoropolymer filled protective coatings

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Mirtich, Michael J.; Sovey, James S.; Nahra, Henry; Rutledge, Sharon K.

1991-01-01

Metal oxide films such as SiO2 are known to provide an effective barrier to the transport of moisture as well as gaseous species through polymeric films. Such thin film coatings have a tendency to crack upon flexure of the polymeric substrate. Sputter co-deposition of SiO2 with 4 to 15 percent fluoropolymers was demonstrated to produce thin films with glass-like barrier properties that have significant increases in strain to failure over pure glass films which improves their tolerance to flexure on polymeric substrates. Deposition techniques capable of producing these films on polymeric substrates are suitable for durable food packaging and oxidation/corrosion protection applications.

High-temperature crystallized thin-film PZT on thin polyimide substrates

NASA Astrophysics Data System (ADS)

Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

2017-10-01

Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

"Shrink-to-fit" superhydrophobicity: thermally-induced microscale wrinkling of thin hydrophobic multilayers fabricated on flexible shrink-wrap substrates.

PubMed

Manna, Uttam; Carter, Matthew C D; Lynn, David M

2013-06-11

An approach to the design of flexible superhydrophobic surfaces based on thermally induced wrinkling of thin, hydrophobic polymer multilayers on heat-shrinkable polymer films is reported. This approach exploits shrinking processes common to "heat-shrink" plastics, and can thus be used to create "shrink-to-fit" superhydrophobic coatings on complex surfaces, manipulate the dimensions and densities of patterned features, and promote heat-activated repair of full-thickness defects. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Transfer printing of thermoreversible ion gels for flexible electronics.

PubMed

Lee, Keun Hyung; Zhang, Sipei; Gu, Yuanyan; Lodge, Timothy P; Frisbie, C Daniel

2013-10-09

Thermally assisted transfer printing was employed to pattern thin films of high capacitance ion gels on polyimide, poly(ethylene terephthalate), and SiO2 substrates. The ion gels consisted of 20 wt % block copolymer poly(styrene-b-ethylene oxide-b-styrene and 80 wt % ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)amide. Patterning resolution was on the order of 10 μm. Importantly, ion gels containing the block polymer with short PS end blocks (3.4 kg/mol) could be transfer-printed because of thermoreversible gelation that enabled intimate gel-substrate contact at 100 °C, while gels with long PS blocks (11 kg/mol) were not printable at the same temperature due to poor wetting contact between the gel and substrates. By using printed ion gels as high-capacitance gate insulators, electrolyte-gated thin-film transistors were fabricated that operated at low voltages (<1 V) with high on/off current ratios (∼10(5)). Statistical analysis of carrier mobility, turn-on voltage, and on/off ratio for an array of printed transistors demonstrated the excellent reproducibility of the printing technique. The results show that transfer printing is an attractive route to pattern high-capacitance ion gels for flexible thin-film devices.

Controlling the crack formation in inkjet-printed silver nanoparticle thin-films for high resolution patterning using intense pulsed light treatment

NASA Astrophysics Data System (ADS)

Gokhale, Pritesh; Mitra, Dana; Sowade, Enrico; Yoti Mitra, Kalyan; Leonel Gomes, Henrique; Ramon, Eloi; Al-Hamry, Ammar; Kanoun, Olfa; Baumann, Reinhard R.

2017-12-01

During the last years, intense pulsed light (IPL) processing has been employed and studied intensively for the drying and sintering of metal nanoparticle layers deposited by means of printing methods on flexible polymer substrates. IPL was found to be a very fast and substrate-gentle approach qualified for the field of flexible and large-area printed electronics, i.e. manufactured via roll-to-roll processing. In this contribution, IPL is used for the fine-patterning of printed silver nanoparticle layers. The patterning is obtained by induced and controlled crack formation in the thin silver layer due to the intense exposure of IPL. The crack formation is controlled by selection of the substrate material, the fine-tuning of the morphology of the silver layer and an application of a dielectric layer on top of the silver layer that acts as a stress concentrator. Careful optimization of the IPL parameters allowed to adjust the lateral width of the crack. This novel approach turned out to be a fast and reproducible high-resolution patterning process for multiple applications, e.g. to pattern the source-drain electrodes for all-inkjet-printed thin-film transistors.

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Recent progress on thin-film encapsulation technologies for organic electronic devices

NASA Astrophysics Data System (ADS)

Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

2016-03-01

Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

Flexible inorganic light emitting diodes based on semiconductor nanowires

PubMed Central

Guan, Nan; Dai, Xing; Babichev, Andrey V.; Julien, François H.

2017-01-01

The fabrication technologies and the performance of flexible nanowire light emitting diodes (LEDs) are reviewed. We first introduce the existing approaches for flexible LED fabrication, which are dominated by organic technologies, and we briefly discuss the increasing research effort on flexible inorganic LEDs achieved by micro-structuring and transfer of conventional thin films. Then, flexible nanowire-based LEDs are presented and two main fabrication technologies are discussed: direct growth on a flexible substrate and nanowire membrane formation and transfer. The performance of blue, green, white and bi-color flexible LEDs fabricated following the transfer approach is discussed in more detail. PMID:29568439

Wearable polyimide-PDMS electrodes for intrabody communication

NASA Astrophysics Data System (ADS)

Moon, Jin-Hee; Baek, Dong Hyun; Choi, Yoon Young; Lee, Kwang Ho; Kim, Hee Chan; Lee, Sang-Hoon

2010-02-01

In this paper, we introduce a novel wearable electrode for an intra-body area network (I-BAN) by employing the advantages of polyimide (PI) which is a well-known substrate material for flexible electrodes and polydimethylsiloxane (PDMS) which is a biocompatible and representative soft-lithography adaptable material. Electrodes were patterned onto thin and flexible PI substrates and encapsulated in PDMS to enhance skin compatibility. For this purpose, we developed an electrode fabrication process on thin PI substrates and a PDMS encapsulation technique by bonding two PDMS layers on the front and back surfaces of the PI electrode. The mechanical property and communication performance of electrodes were characterized through spectrum analysis to optimize the role as an I-BAN electrode. Skin-compatibility and cyto-toxicity tests using human mesenchymal stem cells (hMSCs) were carried out to demonstrate the non-toxicity of the electrode after continuous wearing. Sinusoidal signals of 45 MHz were successfully transmitted with high fidelity between electrodes separated by 30 cm.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

NASA Astrophysics Data System (ADS)

Dahal, Lila Raj

Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with 256 cells followed by ex-situ mapping SE on each cell to achieve better statistics for solar cell optimization by correlating local structural parameters with solar cell parameters. Solar cells of similar structure were also fabricated on flexible polymer substrates in the roll-to-roll configuration. In this configuration as well, RTSE was demonstrated as an effective process monitoring and control tool for thin film photovoltaics.

Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

NASA Astrophysics Data System (ADS)

Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

2017-11-01

Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

NASA Astrophysics Data System (ADS)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

Zinc Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

PubMed Central

Wang, Qun; Jin, Xin

2018-01-01

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency. PMID:29562603

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

NASA Astrophysics Data System (ADS)

Vidor, Fábio F.; Meyers, Thorsten; Müller, Kathrin; Wirth, Gilson I.; Hilleringmann, Ulrich

2017-11-01

Driven by the Internet of Things (IoT), flexible and transparent smart systems have been intensively researched by the scientific community and by several companies. This technology is already available for consumers in a wide range of innovative products, e.g., flexible displays, radio-frequency identification tags and wearable electronic skins which, for instance, collect and analyze data for medical applications. For these systems, thin-film transistors (TFTs) are the key elements responsible for the driving currents. Solution-based materials such as nanoparticle dispersions avail the fabrication on large-area substrates with high throughput processes. In this study, we discuss the integration of ZnO nanoparticle thin-film transistors and inverter circuits on freestanding polymeric substrates enclosing the main issues concerning the transfer of the integration process from a rigid substrate to a flexible one. The TFTs depict VON between -0.2 and 1 V, ION/IOFF > 104 and field-effect mobility >0.5 cm2 V-1 s-1. Additionally, in order to enhance the transistors and inverters performance, an adaptation on the device configuration, from an inverted coplanar to an inverted staggered setup, was conducted and analyzed. By employing the inverted staggered setup a considerable increase in the contact quality between the semiconductor and the drain and source electrodes was observed. As the integrated devices depict electrical characteristics which enable the fabrication of electronic circuits for the low-cost sector, inverters were fabricated and characterized, evaluating the circuit's gain as function of the applied supply voltage and circuit's geometric ratio.

Fully Printed Flexible and Stretchable Electronics

NASA Astrophysics Data System (ADS)

Zhang, Suoming

Through this thesis proposal, the author has demonstrated series of flexible or stretchable sensors including strain gauge, pressure sensors, display arrays, thin film transistors and photodetectors fabricated by a direct printing process. By adopting the novel serpentine configuration with conventional non-stretchable materials silver nanoparticles, the fully printed stretchable devices are successfully fabricated on elastomeric substrate with the demonstration of stretchable conductors that can maintain the electrical properties under strain and the strain gauge, which could be used to measure the strain in desired locations and also to monitor individual person's finger motion. And by investigating the intrinsic stretchable materials silver nanowires (AgNWs) with the conventional configuration, the fully printed stretchable conductors are achieved on various substrates including Si, glass, Polyimide, Polydimethylsiloxane (PDMS) and Very High Bond (VHB) tape with the illustration of the capacitive pressure sensor and stretchable electroluminescent displays. In addition, intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits are directly printed on elastomeric PDMS substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO3) nanoparticles. The BaTiO3/PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. Finally, by applying the SWNTs as the channel layer of the thin film transistor, we successfully fabricate the fully printed flexible photodetector which exhibits good electrical characteristics and the transistors exhibit good reliability under bending conditions owing to the ultrathin polyimide substrate as well as the superior mechanical flexibility of the gate dielectric and carbon nanotube network. Furthermore, we have demonstrated that by using two types of SWCNT samples with different optical absorption characteristics, the photoresponse exhibits unique wavelength selectivity, as manifested by the good correlation between the responsive wavelengths of the devices with the absorption peaks of the corresponding carbon nanotubes. All the proposed materials above together with the unique direct printing process may offer an entry into more sophisticated flexible or stretchable electronic systems with monolithically integrated sensors, actuators, and displays for real life applications.

Flexible Polymer/Metal/Polymer and Polymer/Metal/Inorganic Trilayer Transparent Conducting Thin Film Heaters with Highly Hydrophobic Surface.

PubMed

Kang, Tae-Woon; Kim, Sung Hyun; Kim, Cheol Hwan; Lee, Sang-Mok; Kim, Han-Ki; Park, Jae Seong; Lee, Jae Heung; Yang, Yong Suk; Lee, Sang-Jin

2017-09-27

Polymer/metal/polymer and polymer/metal/inorganic trilayer-structured transparent electrodes with fluorocarbon plasma polymer thin film heaters have been proposed. The polymer/metal/polymer and polymer/metal/inorganic transparent conducting thin films fabricated on a large-area flexible polymer substrate using a continuous roll-to-roll sputtering process show excellent electrical properties and visible-light transmittance. They also exhibit water-repelling surfaces to prevent wetting and to remove contamination. In addition, the adoption of a fluorocarbon/metal/fluorocarbon film permits an outer bending radius as small as 3 mm. These films have a sheet resistance of less than 5 Ω sq -1 , sufficient to drive light-emitting diode circuits. The thin film heater with the fluorocarbon/Ag/SiN x structure exhibits excellent heating characteristics, with a temperature reaching 180 °C under the driving voltage of 13 V. Therefore, the proposed polymer/metal/polymer and polymer/metal/inorganic transparent conducting electrodes using polymer thin films can be applied in flexible and rollable displays as well as automobile window heaters and other devices.

Eco-Friendly and Biodegradable Biopolymer Chitosan/Y₂O₃ Composite Materials in Flexible Organic Thin-Film Transistors.

PubMed

Du, Bo-Wei; Hu, Shao-Ying; Singh, Ranjodh; Tsai, Tsung-Tso; Lin, Ching-Chang; Ko, Fu-Hsiang

2017-09-03

The waste from semiconductor manufacturing processes causes serious pollution to the environment. In this work, a non-toxic material was developed under room temperature conditions for the fabrication of green electronics. Flexible organic thin-film transistors (OTFTs) on plastic substrates are increasingly in demand due to their high visible transmission and small size for use as displays and wearable devices. This work investigates and analyzes the structured formation of aqueous solutions of the non-toxic and biodegradable biopolymer, chitosan, blended with high-k-value, non-toxic, and biocompatible Y₂O₃ nanoparticles. Chitosan thin films blended with Y₂O₃ nanoparticles were adopted as the gate dielectric thin film in OTFTs, and an improvement in the dielectric properties and pinholes was observed. Meanwhile, the on/off current ratio was increased by 100 times, and a low leakage current was observed. In general, the blended chitosan/Y₂O₃ thin films used as the gate dielectric of OTFTs are non-toxic, environmentally friendly, and operate at low voltages. These OTFTs can be used on surfaces with different curvature radii because of their flexibility.

Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

NASA Technical Reports Server (NTRS)

Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

Flexible Film Bulk Acoustic Wave Filters toward Radiofrequency Wireless Communication.

PubMed

Jiang, Yuan; Zhao, Yuan; Zhang, Lin; Liu, Bohua; Li, Quanning; Zhang, Menglun; Pang, Wei

2018-03-30

This paper presents a flexible radiofrequency filter with a central frequency of 2.4 GHz based on film bulk acoustic wave resonators (FBARs). The flexible filter consists of five air-gap type FBARs, each comprised of an aluminum nitride piezoelectric thin film sandwiched between two thin-film electrodes. By transfer printing the inorganic film structure from a silicon wafer to an ultrathin polyimide substrate, high electrical performance and mechanical flexibility are achieved. The filter has a peak insertion loss of -1.14 dB, a 3 dB bandwidth of 107 MHz, and a temperature coefficient of frequency of -27 ppm °C -1 . The passband and roll-off characteristics of the flexible filter are comparable with silicon-based commercial products. No electrical performance degradation and mechanical failure occur under bending tests with a bending radius of 2.5 mm or after 100 bending cycles. The flexible FBAR filters are believed to be promising candidates for future flexible wireless communication systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light Management in Flexible Glass by Wood Cellulose Coating

PubMed Central

Fang, Zhi-Qiang; Zhu, Hong-Li; Li, Yuan-Yuan; Liu, Zhen; Dai, Jia-Qi; Preston, Colin; Garner, Sean; Cimo, Pat; Chai, Xin-Sheng; Chen, Gang; Hu, Liang-Bing

2014-01-01

Ultra-thin flexible glass with high transparency is attractive for a broad range of display applications; however, substrates with low optical haze are not ideal for thin film solar cells, since most of the light will go through the semiconductor layer without scattering, and the length of light travelling path in the active layer is small. By simply depositing a layer of TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl radical)-oxidized wood fibers (TOWFs), we are able to tailor the optical properties of flexible glass dramatically from exhibiting low haze (<1%) to high haze (~56%) without compromising the total forward transmittance (~90%). The influence of the TOWFs morphology on the optical properties of TOWFs-coated flexible glass is investigated. As the average fiber length decreases, the transmission haze of TOWF-coated flexible glass illustrates a decreasing trend. Earth-abundant natural materials for transparent, hazy, and flexible glass have tremendous applicability in the fabrication of flexible optoelectronics with tunable light scattering effects by enabling inexpensive and large-scale processes. PMID:25068486

Direct Write Printing on Thin and Flexible Substrates for Space Applications

NASA Technical Reports Server (NTRS)

Paquette, Beth

2016-01-01

This presentation describes the work done on direct-write printing conductive traces for a flexible detector application. A Repeatability Plan was established to define detector requirements, material and printer selections, printing facilities, and tests to verify requirements are met. Designs were created for the detector, and printed using an aerosol jet printer. Testing for requirement verification is ongoing.

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil.

PubMed

Knobelspies, Stefan; Bierer, Benedikt; Daus, Alwin; Takabayashi, Alain; Salvatore, Giovanni Antonio; Cantarella, Giuseppe; Ortiz Perez, Alvaro; Wöllenstein, Jürgen; Palzer, Stefan; Tröster, Gerhard

2018-01-26

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO₂ gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits.

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

PubMed Central

Bierer, Benedikt; Takabayashi, Alain; Ortiz Perez, Alvaro; Wöllenstein, Jürgen

2018-01-01

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO2 gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits. PMID:29373524

Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

NASA Astrophysics Data System (ADS)

Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

2017-11-01

In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

Vacuum-Assisted Low-Temperature Synthesis of Reduced Graphene Oxide Thin-Film Electrodes for High-Performance Transparent and Flexible All-Solid-State Supercapacitors.

PubMed

Aytug, Tolga; Rager, Matthew S; Higgins, Wesley; Brown, Forrest G; Veith, Gabriel M; Rouleau, Christopher M; Wang, Hui; Hood, Zachary D; Mahurin, Shannon M; Mayes, Richard T; Joshi, Pooran C; Kuruganti, Teja

2018-04-04

Simple and easily integrated design of flexible and transparent electrode materials affixed to polymer-based substrates hold great promise to have a revolutionary impact on the functionality and performance of energy storage devices for many future consumer electronics. Among these applications are touch sensors, roll-up displays, photovoltaic cells, health monitors, wireless sensors, and wearable communication devices. Here, we report an environmentally friendly, simple, and versatile approach to produce optically transparent and mechanically flexible all-solid-state supercapacitor devices. These supercapacitors were constructed on tin-doped indium oxide coated polyethylene terephthalate substrates by intercalation of a polymer-based gel electrolyte between two reduced graphene oxide (rGO) thin-film electrodes. The rGO electrodes were fabricated simply by drop-casting of graphene oxide (GO) films, followed by a novel low-temperature (≤250 °C) vacuum-assisted annealing approach for the in situ reduction of GO to rGO. A trade-off between the optical transparency and electrochemical performance is determined by the concentration of the GO in the initial dispersion, whereby the highest capacitance (∼650 μF cm -2 ) occurs at a relatively lower optical transmittance (24%). Notably, the all-solid-state supercapacitors demonstrated excellent mechanical flexibility with a capacity retention rate above 90% under various bending angles and cycles. These attributes underscore the potential of the present approach to provide a path toward the realization of thin-film-based supercapacitors as flexible and transparent energy storage devices for a variety of practical applications.

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.

Optimization of Semitransparent Anode Electrode for Flexible Green and Red Phosphorescent Organic Light-Emitting Diodes.

PubMed

Lee, Ho Won; Park, Jaehoon; Yang, Hyung Jin; Lee, Song Eun; Lee, Seok Jae; Koo, Ja Ryong; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-03-01

In this paper, we demonstrated thin film semitransparent anode electrode using Ni/Ag/Ni (3/6/3 nm) on green and red phosphorescent OLEDs, which have basically high efficiency and good optical characteristics. Moreover, we applied this semitransparent anode on flexible green and red phosphorescent OLEDs, which were then optimized for possible applications on flexible substrates. First, we studied optimization using various conditions of Ni/Ag/Ni electrodes via transmittance and sheet resistance. We then fabricated the devices on a glass substrate with ITO or Ni/Ag/Ni electrodes as well as on a flexible substrate with a Ni/Ag/Ni electrode for green and red phosphorescent OLEDs. Consequently, we could be proposed that the potential of our semitransparent anode electrode is demonstrated. Green phosphorescent OLEDs characteristics using ITO or Ni/Ag/Ni anode electrodes were coincided and those of the red phosphorescent OLEDs were improved by semitransparent electrodes at 10,000 cd/m2 criterion. Therefore, this research suggests for additional studies to be conducted on flexible and high-performance phosphorescent OLED displays and light applications for ITO-free processes.

12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.

PubMed

Sun, Lei; Qin, Guoxuan; Seo, Jung-Hun; Celler, George K; Zhou, Weidong; Ma, Zhenqiang

2010-11-22

Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.

Fabrication of flexible oriented magnetic thin films with large in-plane uniaxial anisotropy by roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

2016-06-01

Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BHmax) exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by a roll-to-roll (R2R) UV nanoimprint lithography technique. We observed large in-plane uniaxial anisotropies along the long dimension of nanostripes that can be attributed to the shape. Temperature dependent hysteresis measurements confirm that the magnetization reversal is driven by non-coherent rotation reversal processes.

Development of an IrO x micro pH sensor array on flexible polymer substrate

NASA Astrophysics Data System (ADS)

Huang, Wen-Ding; Wang, Jianqun; Ativanichayaphong, Thermpon; Chiao, Mu; Chiao, J. C.

2008-03-01

pH sensor is an essential component used in many chemical, food, and bio-material industries. Conventional glass electrodes have been used to construct pH sensors, however, have some disadvantages in specific applications. It is difficult to use glass electrodes for in vivo biomedical or food monitoring applications due to size limitation and no deformability. In this paper, we present design and fabrication processes of a miniature iridium oxide thin film pH sensor array on flexible polymer substrates. The amorphous iridium oxide thin film was used as the sensing material. A sol-gel dip-coating process of iridium oxide film was demonstrated in this paper. A super-Nernstian response has been measured on individual sensors of the array with a slope of -71.6+/-3 mV/pH at 25°C within the pH range between 2.83 and 11.04.

Low-Temperature Oxidation-Free Selective Laser Sintering of Cu Nanoparticle Paste on a Polymer Substrate for the Flexible Touch Panel Applications.

PubMed

Kwon, Jinhyeong; Cho, Hyunmin; Eom, Hyeonjin; Lee, Habeom; Suh, Young Duk; Moon, Hyunjin; Shin, Jaeho; Hong, Sukjoon; Ko, Seung Hwan

2016-05-11

Copper nanomaterials suffer from severe oxidation problem despite the huge cost effectiveness. The effect of two different processes for conventional tube furnace heating and selective laser sintering on copper nanoparticle paste is compared in the aspects of chemical, electrical and surface morphology. The thermal behavior of the copper thin films by furnace and laser is compared by SEM, XRD, FT-IR, and XPS analysis. The selective laser sintering process ensures low annealing temperature, fast processing speed with remarkable oxidation suppression even in air environment while conventional tube furnace heating experiences moderate oxidation even in Ar environment. Moreover, the laser-sintered copper nanoparticle thin film shows good electrical property and reduced oxidation than conventional thermal heating process. Consequently, the proposed selective laser sintering process can be compatible with plastic substrate for copper based flexible electronics applications.

Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

PubMed Central

Lee, Chi Hwan; Kim, Dong Rip; Cho, In Sun; William, Nemeth; Wang, Qi; Zheng, Xiaolin

2012-01-01

Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any substrates regardless of materials, flatness and rigidness. With the peel-and-stick process, we integrated hydrogenated amorphous silicon (a-Si:H) TFSCs on paper, plastics, cell phone and building windows while maintaining the original 7.5% efficiency. The new peel-and-stick process enables further reduction of the cost and weight for TFSCs and endows TFSCs with flexibility and attachability for broader application areas. We believe that the peel-and-stick process can be applied to thin film electronics as well. PMID:23277871

Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Dong Rip; Cho, In Sun; William, Nemeth; Wang, Qi; Zheng, Xiaolin

2012-12-01

Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any substrates regardless of materials, flatness and rigidness. With the peel-and-stick process, we integrated hydrogenated amorphous silicon (a-Si:H) TFSCs on paper, plastics, cell phone and building windows while maintaining the original 7.5% efficiency. The new peel-and-stick process enables further reduction of the cost and weight for TFSCs and endows TFSCs with flexibility and attachability for broader application areas. We believe that the peel-and-stick process can be applied to thin film electronics as well.

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

PubMed Central

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-01-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

NASA Astrophysics Data System (ADS)

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-05-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

NASA Astrophysics Data System (ADS)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

Integration of Indium Phosphide Based Devices with Flexible Substrates

NASA Astrophysics Data System (ADS)

Chen, Wayne Huai

2011-12-01

Flexible substrates have many advantages in applications where bendability, space, or weight play important roles or where rigid circuits are undesirable. However, conventional flexible thin film transistors are typically characterized as having low carrier mobility as compared to devices used in the electronics industry. This is in part due to the limited temperature tolerance of plastic flexible substrates, which commonly reduces the highest processing temperature to below 200°C. Common approaches of implementation include low temperature deposition of organic, amorphous, or polycrystalline semiconductors, all of which result in carrier mobility well below 100 cm2V -1s-1. High quality, single crystalline III-V semiconductors such as indium phosphide (InP), on the other hand, have carrier mobility well over 1000 cm 2V-1s-1 at room temperature, depending on carrier concentration. Recently, the ion-cut process has been used in conjunction with wafer bonding to integrate thin layers of III-V material onto silicon for optoelectronic applications. This approach has the advantage of high scalability, reusability of the initial III-V substrate, and the ability to tailor the location (depth) of the layer splitting. However, the transferred substrate usually suffers from hydrogen implantation damage. This dissertation demonstrates a new approach to enable integration of InP with various substrates, called the double-flip transfer process. The process combines ion-cutting with adhesive bonding. The problem of hydrogen implantation was overcome by patterned ion-cut transfer. In this type of transfer, areas of interest are shielded from implantation but still transferred by surrounding implanted regions. We found that patterned ion-cut transfer is strongly dependent upon crystal orientation and that using cleavage-plane oriented donors can be beneficial in transferring large areas of high quality semiconductor material. InP-based devices were fabricated to demonstrate the transfer process and test functionality following transfer. Passive devices (photodetectors) as well as active transistors were transferred and fabricated on various substrates. The transferred device layers were either implanted through with a blanket implant or protected with an ion-mask during implantation. Results demonstrate the viability of the double-flip ion-cut process in achieving very high electron mobility (˜2800 cm2V-1s-1) transistors on plastic flexible substrates.

Superhydrophobicity enhancement through substrate flexibility

NASA Astrophysics Data System (ADS)

Vasileiou, Thomas; Gerber, Julia; Prautzsch, Jana; Schutzius, Thomas; Poulikakos, Dimos

2017-11-01

Inspired by manifestations in nature, micro/nanoengineering superhydrophobic surfaces has been the focus of much work. Generally, hydrophobicity is increased through the combined effects of surface texturing and chemistry; being durable, rigid substrate materials are the norm. However, many natural and technical materials are flexible, and the resulting effect on hydrophobicity has been largely unexplored. Here, we show that the rational tuning of flexibility can work collaboratively with the surface micro/nanotexture to enhance liquid repellency performance, defined by impalement and breakup resistance, contact time reduction, and restitution coefficient increase. Reduction in substrate stiffness and areal density imparts immediate acceleration and intrinsic responsiveness to impacting droplets, mitigating the collision and lowering the impalement probability by 60 % without the need for active actuation. We demonstrate the above discoveries with materials ranging from thin steel or polymer sheets to butterfly wings. Partial support of the Swiss National Science Foundation under Grant 162565 and the European Research Council under Advanced Grant 669908 (INTICE) is acknowledged.

Flexible PZT Thin Film Tactile Sensor for Biomedical Monitoring

PubMed Central

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-01-01

This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g. PMID:23698262

Flexible PZT thin film tactile sensor for biomedical monitoring.

PubMed

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-04-25

This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.

Hybrid solar cell based on a-Si/polymer flat heterojunction on flexible substrates

NASA Astrophysics Data System (ADS)

Olivares Vargas, A. J.; Mansurova, S.; Cosme, I.; Kosarev, A.; Ospina Ocampo, C. A.; Martinez Mateo, H. E.

2017-08-01

In this work, we present the results of investigation of thin film hybrid organic-inorganic photovoltaic structures based on flat heterojunction hydrogenated silicon (a-Si:H) and poly(3,4 ethylene dioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) fabricated on polyethylene naphthalate (PEN). Different thicknesses of transparent AL doped Zn:O (AZO) electrodes have been tested on PEN substrate and studied by atomic force microscopy (AFM). The AZO films on PEN substrate were statistically processed to obtain surface morphological characteristics, such as root mean square roughness RQ, skewness SK and kurtosis KU. Performance characteristics of fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes under standard illumination (AM 1.5 I0= 100mW/cm2). Structures on flexible substrates show reproducible performance characteristic as their glass substrate counterpart with values of JSC= 6 mA/cm2, VOC= 0.535 V, FF= 43 % and PCE= 1.41%.

Method of accurate thickness measurement of boron carbide coating on copper foil

DOEpatents

Lacy, Jeffrey L.; Regmi, Murari

2017-11-07

A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

DOE PAGES

Amrillah, Tahta; Bitla, Yugandhar; Shin, Kwangwoo; ...

2017-05-22

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric–ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this paper, we investigated the magnetoelectric coupling in a self-assembled BiFeO 3 (BFO)–CoFe 2O 4 (CFO) bulk heterojunction epitaxially grownmore » on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO–CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Finally and therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.« less

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amrillah, Tahta; Bitla, Yugandhar; Shin, Kwangwoo

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric–ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this paper, we investigated the magnetoelectric coupling in a self-assembled BiFeO 3 (BFO)–CoFe 2O 4 (CFO) bulk heterojunction epitaxially grownmore » on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO–CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Finally and therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.« less

Directed-Assembly of Carbon Nanotubes on Soft Substrates for Flexible Biosensor Array

NASA Astrophysics Data System (ADS)

Lee, Hyoung Woo; Koh, Juntae; Lee, Byung Yang; Kim, Tae Hyun; Lee, Joohyung; Hong, Seunghun; Yi, Mihye; Jhon, Young Min

2009-03-01

We developed a method to selectively assemble and align carbon nanotubes (CNTs) on soft substrates for flexible biosensors. In this strategy, thin oxide layer was deposited on soft substrates via low temperature plasma enhanced chemical vapor deposition, and linker-free assembly process was applied onto the oxide surface where the assembly of carbon nanotubes was guided by methyl-terminated molecular patterns on the oxide surface. The electrical characterization of the fabricated CNT devices exhibited typical p-type gating effect and 1/f noise behavior. The bare oxide regions near CNTs were functionalized with glutamate oxidase to fabricate selective biosensors to detect two forms of glutamate substances existing in different situations: L-glutamic acid, a neuro-transmitting material, and monosodium glutamate, a food additive.

Formation of Au nano-patterns on various substrates using simplified nano-transfer printing method

NASA Astrophysics Data System (ADS)

Kim, Jong-Woo; Yang, Ki-Yeon; Hong, Sung-Hoon; Lee, Heon

2008-06-01

For future device applications, fabrication of the metal nano-patterns on various substrates, such as Si wafer, non-planar glass lens and flexible plastic films become important. Among various nano-patterning technologies, nano-transfer print method is one of the simplest techniques to fabricate metal nano-patterns. In nano-transfer printing process, thin Au layer is deposited on flexible PDMS mold, containing surface protrusion patterns, and the Au layer is transferred from PDMS mold to various substrates due to the difference of bonding strength of Au layer to PDMS mold and to the substrate. For effective transfer of Au layer, self-assembled monolayer, which has strong bonding to Au, is deposited on the substrate as a glue layer. In this study, complicated SAM layer coating process was replaced to simple UV/ozone treatment, which can activates the surface and form the -OH radicals. Using simple UV/ozone treatments on both Au and substrate, Au nano-pattern can be successfully transferred to as large as 6 in. diameter Si wafer, without SAM coating process. High fidelity transfer of Au nano-patterns to non-planar glass lens and flexible PET film was also demonstrated.

Van der Waals epitaxy of functional MoO{sub 2} film on mica for flexible electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Chun-Hao; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan; Lin, Jheng-Cyuan

Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO{sub 2} films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO{sub 2} films are similar tomore » those of the bulk. Flexible or free-standing MoO{sub 2} thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides.« less

320-nm Flexible Solution-Processed 2,7-dioctyl[1] benzothieno[3,2-b]benzothiophene Transistors.

PubMed

Ren, Hang; Tang, Qingxin; Tong, Yanhong; Liu, Yichun

2017-08-09

Flexible organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages such as light weight, low cost, flexibility, large-area fabrication, and compatibility with solution-processed techniques. However, compared with a rigid substrate, it still remains a challenge to obtain good device performance by directly depositing solution-processed organic semiconductors onto an ultrathin plastic substrate. In this work, ultrathin flexible OTFTs are successfully fabricated based on spin-coated 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) films. The resulting device thickness is only ~320 nm, so the device has the ability to adhere well to a three-dimension curved surface. The ultrathin C8-BTBT OTFTs exhibit a mobility as high as 4.36 cm² V -1 s -1 and an on/off current ratio of over 10⁶. These results indicate the substantial promise of our ultrathin flexible C8-BTBT OTFTs for next-generation flexible and conformal electronic devices.

320-nm Flexible Solution-Processed 2,7-dioctyl[1] benzothieno[3,2-b]benzothiophene Transistors

PubMed Central

Ren, Hang; Tang, Qingxin; Tong, Yanhong; Liu, Yichun

2017-01-01

Flexible organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages such as light weight, low cost, flexibility, large-area fabrication, and compatibility with solution-processed techniques. However, compared with a rigid substrate, it still remains a challenge to obtain good device performance by directly depositing solution-processed organic semiconductors onto an ultrathin plastic substrate. In this work, ultrathin flexible OTFTs are successfully fabricated based on spin-coated 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) films. The resulting device thickness is only ~320 nm, so the device has the ability to adhere well to a three-dimension curved surface. The ultrathin C8-BTBT OTFTs exhibit a mobility as high as 4.36 cm2 V−1 s−1 and an on/off current ratio of over 106. These results indicate the substantial promise of our ultrathin flexible C8-BTBT OTFTs for next-generation flexible and conformal electronic devices. PMID:28792438

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

NASA Astrophysics Data System (ADS)

Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

2018-01-01

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

Passivation coating for flexible substrate mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1990-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

Thin-Film Solar Array Earth Orbit Mission Applicability Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Raffaelle, Ryne P.

2002-01-01

This is a preliminary assessment of the applicability and spacecraft-level impact of using very lightweight thin-film solar arrays with relatively large deployed areas for representative Earth orbiting missions. The most and least attractive features of thin-film solar arrays are briefly discussed. A simple calculation is then presented illustrating that from a solar array alone mass perspective, larger arrays with less efficient but lighter thin-film solar cells can weigh less than smaller arrays with more efficient but heavier crystalline cells. However, a proper spacecraft-level systems assessment must take into account the additional mass associated with solar array deployed area: the propellant needed to desaturate the momentum accumulated from area-related disturbance torques and to perform aerodynamic drag makeup reboost. The results for such an assessment are presented for a representative low Earth orbit (LEO) mission, as a function of altitude and mission life, and a geostationary Earth orbit (GEO) mission. Discussion of the results includes a list of specific mission types most likely to benefit from using thin-film arrays. NASA Glenn's low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is also briefly discussed to provide a perspective on one approach to achieving this enabling technology. The paper concludes with a list of issues to be addressed prior to use of thin-film solar arrays in space and the observation that with their unique characteristics, very lightweight arrays using efficient, thin-film cells on flexible substrates may become the best array option for a subset of Earth orbiting missions.

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Nanowire surface fastener fabrication on flexible substrate.

PubMed

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-27

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm -2 ) and low contact resistivity (2.2 × 10 -4 Ω cm 2 ).

Nanowire surface fastener fabrication on flexible substrate

NASA Astrophysics Data System (ADS)

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-01

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm‑2) and low contact resistivity (2.2 × 10‑4 Ω cm2).

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Highly transparent, flexible, and thermally stable superhydrophobic ORMOSIL aerogel thin films.

PubMed

Budunoglu, Hulya; Yildirim, Adem; Guler, Mustafa O; Bayindir, Mehmet

2011-02-01

We report preparation of highly transparent, flexible, and thermally stable superhydrophobic organically modified silica (ORMOSIL) aerogel thin films from colloidal dispersions at ambient conditions. The prepared dispersions are suitable for large area processing with ease of coating and being directly applicable without requiring any pre- or post-treatment on a variety of surfaces including glass, wood, and plastics. ORMOSIL films exhibit and retain superhydrophobic behavior up to 500 °C and even on bent flexible substrates. The surface of the films can be converted from superhydrophobic (contact angle of 179.9°) to superhydrophilic (contact angle of <5°) by calcination at high temperatures. The wettability of the coatings can be changed by tuning the calcination temperature and duration. The prepared films also exhibit low refractive index and high porosity making them suitable as multifunctional coatings for many application fields including solar cells, flexible electronics, and lab on papers.

Printing and Folding: A Solution for High-Throughput Processing of Organic Thin-Film Thermoelectric Devices

PubMed Central

Mortazavinatanzi, Seyedmohammad; Rosendahl, Lasse

2018-01-01

Wearable electronics are rapidly expanding, especially in applications like health monitoring through medical sensors and body area networks (BANs). Thermoelectric generators (TEGs) have been the main candidate among the different types of energy harvesting methods for body-mounted or even implantable sensors. Introducing new semiconductor materials like organic thermoelectric materials and advancing manufacturing techniques are paving the way to overcome the barriers associated with the bulky and inflexible nature of the common TEGs and are making it possible to fabricate flexible and biocompatible modules. Yet, the lower efficiency of these materials in comparison with bulk-inorganic counterparts as well as applying them mostly in the form of thin layers on flexible substrates limits their applications. This research aims to improve the functionality of thin and flexible organic thermoelectric generators (OTEs) by utilizing a novel design concept inspired by origami. The effects of critical geometric parameters are investigated using COMSOL Multiphysics to further prove the concept of printing and folding as an approach for the system level optimization of printed thin film TEGs. PMID:29584634

Transparent and flexible supercapacitors with single walled carbon nanotube thin film electrodes.

PubMed

Yuksel, Recep; Sarioba, Zeynep; Cirpan, Ali; Hiralal, Pritesh; Unalan, Husnu Emrah

2014-09-10

We describe a simple process for the fabrication of transparent and flexible, solid-state supercapacitors. Symmetric electrodes made up of binder-free single walled carbon nanotube (SWCNT) thin films were deposited onto polydimethylsiloxane substrates by vacuum filtration followed by a stamping method, and solid-state supercapacitor devices were assembled using a gel electrolyte. An optical transmittance of 82% was found for 0.02 mg of SWCNTs, and a specific capacitance of 22.2 F/g was obtained. The power density can reach to 41.5 kW · kg(-1) and shows good capacity retention (94%) upon cycling over 500 times. Fabricated supercapacitors will be relevant for the realization of transparent and flexible devices with energy storage capabilities, displays and touch screens in particular.

Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

PubMed

Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

2015-10-01

Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT.

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

PubMed

Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

2016-07-29

Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

Waste to wealth concept: Disposable RGO filter paper for flexible temperature sensor applications

NASA Astrophysics Data System (ADS)

Neella, Nagarjuna; Kedambaimoole, Vaishakh; Gaddam, Venkateswarlu; Nayak, M. M.; Rajanna, K.

2018-04-01

We have developed a flexible reduced graphene oxide (RGO) temperature sensor on filter paper based cellulose substrate using vacuum filtration method. One of the most commonly used synthesized methods for RGO thin films is vacuum filtration process. It has several advantages such as simple operation and good controllability. The structural analysis was carried out by FE-SEM, in which the surface morphology images confirm the formation of RGO nanostructures on the filter paper substrate. It was observed that the pores of the filter paper were completely filled with the RGO material during the filtration process, subsequently the formation of continuous RGO thin films. As a results, the RGO films exhibits a piezoresistive property. The resulted RGO based films on the filter paper reveals the semiconducting behavior having sensitivity of 0.278 Ω /°C and negative temperature coefficient (NTC) about -0.00254 Ω/ Ω / °C. Thus, we demonstrate a simplified way for the fabrication of RGO films on filter paper that possesses better and easier measurable macroscopic electrical properties. Our approach is for easy way of electronics, cost-effective and environment friendly fabrication route for flexible conducting graphene films on filter paper. This will enable for the potential applications in flexible electronics in various fields including biomedical, automobile and aerospace engineering.

Flexible OLED fabrication with ITO thin film on polymer substrate

NASA Astrophysics Data System (ADS)

Kim, Sung Il; Lee, Kyo Woong; Bhusan Sahu, Bibhuti; Geon Han, Jeon

2015-09-01

This paper reports the synthesis of flexible indium tin oxide (ITO) films in a dual pulse magnetron sputtering (DPMS) system at low temperature (<100 °C) deposition condition. This study also presents experimental demonstration of the ITO films for their possible use in the fabrication of organic light emitting diode (OLED) device, and the device performance on the super polycarbonate substrates. The presented data reveals the feasibility of ITO films, with a very low sheet resistance of ∼30 Ω/□ and high transmittance of ∼88% at 550 nm, simply by the magnetron pulse mode operations with increasing pulse frequency from 0 to 50 kHz.

van der Waals epitaxial ZnTe thin film on single-crystalline graphene

NASA Astrophysics Data System (ADS)

Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

2018-01-01

Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

PubMed

Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2015-11-14

Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

PubMed

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

NASA Astrophysics Data System (ADS)

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including `see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ~82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.

PubMed

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J; Janes, David B

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

The Use of Feature Parameters to Asses Barrier Properties of ALD coatings for Flexible PV Substrates

NASA Astrophysics Data System (ADS)

Blunt, Liam; Robbins, David; Fleming, Leigh; Elrawemi, Mohamed

2014-03-01

This paper reports on the recent work carried out as part of the EU funded NanoMend project. The project seeks to develop integrated process inspection, cleaning, repair and control systems for nano-scale thin films on large area substrates. In the present study flexible photovoltaic films have been the substrate of interest. Flexible PV films are the subject of significant development at present and the latest films have efficiencies at or beyond the level of Si based rigid PV modules. These flexible devices are fabricated on polymer film by the repeated deposition, and patterning, of thin layer materials using roll-to-roll processes, where the whole film is approximately 3um thick prior to encapsulation. Whilst flexible films offer significant advantages in terms of mass and the possibility of building integration (BIPV) they are at present susceptible to long term environmental degradation as a result of water vapor transmission through the barrier layers to the CIGS (Copper Indium Gallium Selenide CuInxGa(1-x)Se2) PV cells thus causing electrical shorts and efficiency drops. Environmental protection of the GIGS cell is provided by a thin (40nm) barrier coating of Al2O3. The highly conformal aluminium oxide barrier layer is produced by atomic layer deposition (ALD) where, the ultra-thin Al2O3 layer is deposited onto polymer thin films before these films encapsulate the PV cell. The surface of the starting polymer film must be of very high quality in order to avoid creating defects in the device layers. Since these defects reduce manufacturing yield, in order to prevent them, a further thin polymer coating (planarization layer) is generally applied to the polymer film prior to deposition. The presence of surface irregularities on the uncoated film can create defects within the nanometre-scale, aluminium oxide, barrier layer and these are measured and characterised. This paper begins by reporting the results of early stage measurements conducted to characterise the uncoated and coated polymer film surface topography using feature parameter analysis. The measurements are carried out using a Taylor Hobson Coherence Correlation Interferometer an optical microscope and SEM. Feature parameter analysis allows the efficient separation of small insignificant defects from large defects. The presence of both large and insignificant defects is then correlated with the water vapour transmission rate as measured on representative sets of films using at standard MOCON test. The paper finishes by drawing conclusions based on analysis of WVTR and defect size, where it is postulated that small numbers of large defects play a significant role in higher levels of WVTR.

Field-effect enhanced triboelectric colloidal quantum dot flexible sensor

NASA Astrophysics Data System (ADS)

Meng, Lingju; Xu, Qiwei; Fan, Shicheng; Dick, Carson R.; Wang, Xihua

2017-10-01

Flexible electronics, which is of great importance as fundamental sensor and communication technologies for many internet-of-things applications, has established a huge market encroaching into the trillion-dollar market of solid state electronics. For the capability of being processed by printing or spraying, colloidal quantum dots (CQDs) play an increasingly important role in flexible electronics. Although the electrical properties of CQD thin-films are expected to be stable on flexible substrates, their electrical performance could be tuned for applications in flexible touch sensors. Here, we report CQD touch sensors employing polydimethylsiloxane (PDMS) triboelectric films. The electrical response of touching activity is enhanced by incorporating CQD field-effect transistors into the device architecture. Thanks to the use of the CQD thin film as a current amplifier, the field-effect CQD touch sensor shows a fast response to various touching materials, even being bent to a large curvature. It also shows a much higher output current density compared to a PDMS triboelectric touch sensor.

Bimorph material/structure designs for high sensitivity flexible surface acoustic wave temperature sensors.

PubMed

Tao, R; Hasan, S A; Wang, H Z; Zhou, J; Luo, J T; McHale, G; Gibson, D; Canyelles-Pericas, P; Cooke, M D; Wood, D; Liu, Y; Wu, Q; Ng, W P; Franke, T; Fu, Y Q

2018-06-13

A fundamental challenge for surface acoustic wave (SAW) temperature sensors is the detection of small temperature changes on non-planar, often curved, surfaces. In this work, we present a new design methodology for SAW devices based on flexible substrate and bimorph material/structures, which can maximize the temperature coefficient of frequency (TCF). We performed finite element analysis simulations and obtained theoretical TCF values for SAW sensors made of ZnO thin films (~5 μm thick) coated aluminum (Al) foil and Al plate substrates with thicknesses varied from 1 to 1600 μm. Based on the simulation results, SAW devices with selected Al foil or plate thicknesses were fabricated. The experimentally measured TCF values were in excellent agreements with the simulation results. A normalized wavelength parameter (e.g., the ratio between wavelength and sample thickness, λ/h) was applied to successfully describe changes in the TCF values, and the TCF readings of the ZnO/Al SAW devices showed dramatic increases when the normalized wavelength λ/h was larger than 1. Using this design approach, we obtained the highest reported TCF value of -760 ppm/K for a SAW device made of ZnO thin film coated on Al foils (50 μm thick), thereby enabling low cost temperature sensor applications to be realized on flexible substrates.

Method of manufacturing a shapeable short-resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

MEMS and Metamaterials: A Perfect Marriage at Terahertz Frequencies

DTIC Science & Technology

2012-08-01

Fabricating resonant THz metamaterials on free-standing polyimide substrates, which are highly mechanically flexible and transparent to THz radiation...The low-loss polyimide substrates can be as thin as 5.5 m yielding robust large-area metamaterials which are easily wrapped into cylinders with a...contamination, helping to maintain the integrity and biocompatibility of the silk films. Advanced Materials, 22 (32) 2010 Silk Metamaterials at THz

Pulser Laser Deposition of Transparent Conducting Thin Films on Flexible Substrates

DTIC Science & Technology

2001-01-19

8217-diphenyl-4,4’diamine (TPD), 50, and an electron 9 transport/emitting layer (ETL/EML) 20, of tris (8-hydroxyquinolinolato) aluminum (III) ( Alq3 ), 10...nm 0 nm 300 nm Fig.6(a) r—1 20 nm 300 10 nm 0 nm 150 300 nm Fig. 6(b) MgAg 30 Alq3 (70iim) TPD (50nm) 20 10 ITO PET substrate 40

Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

NASA Astrophysics Data System (ADS)

Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

2017-04-01

Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AlN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

Directed assembly of carbon nanotubes on soft substrates for use as a flexible biosensor array.

PubMed

Koh, Juntae; Yi, Mihye; Yang Lee, Byung; Kim, Tae Hyun; Lee, Joohyung; Jhon, Young Min; Hong, Seunghun

2008-12-17

We have developed a method to selectively assemble and align carbon nanotubes (CNTs) on soft substrates for use as flexible biosensors. In this strategy, a thin oxide layer was deposited on soft substrates via low temperature plasma enhanced chemical vapor deposition, and a linker-free assembly process was applied on the oxide surface where the assembly of carbon nanotubes was guided by methyl-terminated molecular patterns on the oxide surface. The electrical characterization of the fabricated CNT devices exhibited a typical p-type gating effect and 1/f noise behavior. The bare oxide regions near CNTs were functionalized with glutamate oxidase to fabricate selective biosensors to detect two forms of glutamate substances existing in different situations: L-glutamic acid, a neurotransmitting material, and monosodium glutamate, a food additive.

Current progress and technical challenges of flexible liquid crystal displays

NASA Astrophysics Data System (ADS)

Fujikake, Hideo; Sato, Hiroto

2009-02-01

We focused on several technical approaches to flexible liquid crystal (LC) display in this report. We have been developing flexible displays using plastic film substrates based on polymer-dispersed LC technology with molecular alignment control. In our representative devices, molecular-aligned polymer walls keep plastic-substrate gap constant without LC alignment disorder, and aligned polymer networks create monostable switching of fast-response ferroelectric LC (FLC) for grayscale capability. In the fabrication process, a high-viscosity FLC/monomer solution was printed, sandwiched and pressed between plastic substrates. Then the polymer walls and networks were sequentially formed based on photo-polymerization-induced phase separation in the nematic phase by two exposure processes of patterned and uniform ultraviolet light. The two flexible backlight films of direct illumination and light-guide methods using small three-primary-color light-emitting diodes were fabricated to obtain high-visibility display images. The fabricated flexible FLC panels were driven by external transistor arrays, internal organic thin film transistor (TFT) arrays, and poly-Si TFT arrays. We achieved full-color moving-image displays using the flexible FLC panel and the flexible backlight film based on field-sequential-color driving technique. Otherwise, for backlight-free flexible LC displays, flexible reflective devices of twisted guest-host nematic LC and cholesteric LC were discussed with molecular-aligned polymer walls. Singlesubstrate device structure and fabrication method using self-standing polymer-stabilized nematic LC film and polymer ceiling layer were also proposed for obtaining LC devices with excellent flexibility.

Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

PubMed

Salvatore, Giovanni A; Münzenrieder, Niko; Barraud, Clément; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Ensslin, Klaus; Tröster, Gerhard

2013-10-22

Recently, transition metal dichalcogenides (TMDCs) have attracted interest thanks to their large field effective mobility (>100 cm(2)/V · s), sizable band gap (around 1-2 eV), and mechanical properties, which make them suitable for high performance and flexible electronics. In this paper, we present a process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support. The two-dimensional semiconductor is mechanically exfoliated from a bulk crystal on a silicon/polyvinyl alcohol (PVA)/polymethyl methacrylane (PMMA) stack optimized to ensure high contrast for the identification of subnanometer thick flakes. Thin film transistors (TFTs) with structured source/drain and gate electrodes are fabricated following a designed procedure including steps of UV lithography, wet etching, and atomic layer deposited (ALD) dielectric. Successively, after the dissolution of the PVA sacrificial layer in water, the PMMA film, with the devices on top, can be transferred to another substrate of choice. Here, we transferred the devices on a polyimide plastic foil and studied the performance when tensile strain is applied parallel to the TFT channel. We measured an electron field effective mobility of 19 cm(2)/(V s), an I(on)/I(off)ratio greater than 10(6), a gate leakage current as low as 0.3 pA/μm, and a subthreshold swing of about 250 mV/dec. The devices continue to work when bent to a radius of 5 mm and after 10 consecutive bending cycles. The proposed fabrication strategy can be extended to any kind of 2D materials and enable the realization of electronic circuits and optical devices easily transferrable to any other support.

Transparent resistive switching memory using aluminum oxide on a flexible substrate

NASA Astrophysics Data System (ADS)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery.

PubMed

Sepúlveda, Alfonso; Speulmanns, Jan; Vereecken, Philippe M

2018-01-01

The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li 4 Ti 5 O 12 , LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime.

High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

PubMed

Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

2016-12-21

Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Yu, Zhi-nong; Zhao, Jian-jian; Xia, Fan; Lin, Ze-jiang; Zhang, Dong-pu; Leng, Jian; Xue, Wei

2011-03-01

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

Integrated thin film cadmium sulfide solar cell module

NASA Technical Reports Server (NTRS)

Mickelsen, R. A.; Abbott, D. D.

1971-01-01

The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

Corrosion, optical and magnetic properties of flexible iron nitride nano thin films deposited on polymer substrate

NASA Astrophysics Data System (ADS)

Khan, W. Q.; Wang, Qun; Jin, Xin; Yasin, G.

2017-11-01

Iron nitride thin films of different compositions and thicknesses were deposited on flexible polymer substrate in Ar/N2 atmosphere by reactive magnetron sputtering under varying nitrogen flow rates. The nano structured films were characterized by X-ray diffraction, UV-visible spectrophotometer, electrochemical impedance (EIS), atomic force (AFM) and transmission electron microscopies. The dependence of their functional properties on coating and growth conditions was studied in detail. It was found that the thin films show a uniform permeability in the frequency range of 200 MHz to 1 Ghz and can be used in this range without appreciable changes. Decrease of nitrogen flow rate resulted in the smoother surfaces which in turn increase transmittance quality and corrosion resistance. Functional properties are dependent of nature, relative concentration of the iron nitride phases and film thickness. Surface integrity is excellent for180 nm thick sample because the films appear to be very dense and free from open pores. By keeping sputtering power stable at 110 W, nitrogen flow rate of 10 sccm was ideal to develop the ferromagnetic γʹFe4N phase at room temperature.

Solution processed flexible organic thin film back-gated transistors based on polyimide dielectric films

NASA Astrophysics Data System (ADS)

Park, Janghoon; Min, Yoonki; Lee, Dongjin

2018-04-01

An organic thin film back-gated transistor (OBGT) was fabricated and characterized. The gate electrode was printed on the back side of substrate, and the dielectric layer was omitted by substituting the dielectric layer with the polyimide (PI) film substrate. Roll-to-roll (R2R) gravure printing, doctor blading, and drop casting methods were used to fabricate the OBGT. The printed OBGT device shows better performance compared with an OTFT device based on dielectric layer of BaTiO3. Additionally, a calendering process enhanced the performance by a factor of 3 to 7 (mobility: 0.016 cm2/V.s, on/off ratio: 9.17×103). A bending test was conducted to confirm the flexibility and durability of the OBGT device. The results show the fabricated device endures 20000-cyclic motions. The realized OBGT device was successfully fabricated and working, which is meaningful for production engineering from the viewpoint of process development.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Substrate induced changes in atomically thin 2-dimensional semiconductors: Fundamentals, engineering, and applications

NASA Astrophysics Data System (ADS)

Sun, Yinghui; Wang, Rongming; Liu, Kai

2017-03-01

Substrate has great influences on materials syntheses, properties, and applications. The influences are particularly crucial for atomically thin 2-dimensional (2D) semiconductors. Their thicknesses are less than 1 nm; however, the lateral sizes can reach up to several inches or more. Therefore, these materials must be placed onto a variety of substrates before subsequent post-processing techniques for final electronic or optoelectronic devices. Recent studies reveal that substrates have been employed as ways to modulate the optical, electrical, mechanical, and chemical properties of 2D semiconductors. In this review, we summarize recent progress upon the effects of substrates on properties of 2D semiconductors, mostly focused on 2D transition metal dichalcogenides, through viewpoints of both fundamental physics and device applications. First, we discuss various effects of substrates, including interface strain, charge transfer, dielectric screening, and optical interference. Second, we show the modulation of 2D semiconductors by substrate engineering, including novel substrates (patterned substrates, 2D-material substrates, etc.) and active substrates (phase transition materials, ferroelectric materials, flexible substrates, etc.). Last, we present prospectives and challenges in this research field. This review provides a comprehensive understanding of the substrate effects, and may inspire new ideas of novel 2D devices based on substrate engineering.

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.

PubMed

Zhu, Weinan; Park, Saungeun; Yogeesh, Maruthi N; McNicholas, Kyle M; Bank, Seth R; Akinwande, Deji

2016-04-13

Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm(2)/V·s and current density of ∼100 μA/μm at VDS = -2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the improved air-stability of fabricated BP devices. In addition, the high-frequency performance was investigated through mechanical bending test up to ∼1.5% tensile strain, which is ultimately limited by the inorganic dielectric film rather than the 2D material. Comparison of BP RF devices to other 2D semiconductors clearly indicates that BP offers the highest saturation velocity, an important metric for high-speed and RF flexible nanosystems.

Film Fabrication Technologies at NREL

NASA Technical Reports Server (NTRS)

Mcconnell, Robert D.

1993-01-01

The National Renewable Energy Laboratory (NREL) has extensive capabilities for fabricating a variety of high-technology films. Much of the in-house work in NREL's large photovoltaics (PV) program involves the fabrication of multiple thin-film semiconducting layers constituting a thin-film PV device. NREL's smaller program in superconductivity focuses on the fabrication of superconducting films on long, flexible tape substrates. This paper focuses on four of NREL's in-house research groups and their film fabrication techniques, developed for a variety of elements, alloys, and compounds to be deposited on a variety of substrates. As is the case for many national laboratories, NREL's technology transfer efforts are focusing on Cooperative Research and Development Agreements (CRADA's) between NREL researchers and private industry researchers.

Method for making thick and/or thin film

DOEpatents

Pham, Ai Quoc; Glass, Robert S.

2004-11-02

A method to make thick or thin films a very low cost. The method is generally similar to the conventional tape casting techniques while being more flexible and versatile. The invention involves preparing a slip (solution) of desired material and including solvents such as ethanol and an appropriate dispersant to prevent agglomeration. The slip is then sprayed on a substrate to be coated using an atomizer which spreads the slip in a fine mist. Upon hitting the substrate, the solvent evaporates, leaving a green tape containing the powder and other additives, whereafter the tape may be punctured, cut, and heated for the desired application. The tape thickness can vary from about 1 .mu.m upward.

Enhancement of photocurrent in epitaxial lift-off thin-film GaInNAsSb solar cells due to light-confinement structure

NASA Astrophysics Data System (ADS)

Miyashita, Naoya; Behaghel, Benoît; Guillemoles, Jean-François; Okada, Yoshitaka

2018-07-01

This work focuses on the characterization of GaInNAsSb solar cells whose substrates are removed via the epitaxial lift-off (ELO) technique. As a result of the substrate removal, increases in the photocurrent and the interference feature were clearly observed. This is clear evidence of the light-confinement effect, whereby some of the unabsorbed photons at the rear metal contact were reflected back towards the front side of the ELO thin-film cell. We successfully demonstrated that the ELO technique can be applied for the GaInNAsSb cell, and the light management should add flexibility in designing the cell structures.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Flexible Chip Scale Package and Interconnect for Implantable MEMS Movable Microelectrodes for the Brain

PubMed Central

Jackson, Nathan; Muthuswamy, Jit

2009-01-01

We report here a novel approach called MEMS microflex interconnect (MMFI) technology for packaging a new generation of Bio-MEMS devices that involve movable microelectrodes implanted in brain tissue. MMFI addresses the need for (i) operating space for movable parts and (ii) flexible interconnects for mechanical isolation. We fabricated a thin polyimide substrate with embedded bond-pads, vias, and conducting traces for the interconnect with a backside dry etch, so that the flexible substrate can act as a thin-film cap for the MEMS package. A double gold stud bump rivet bonding mechanism was used to form electrical connections to the chip and also to provide a spacing of approximately 15–20 µm for the movable parts. The MMFI approach achieved a chip scale package (CSP) that is lightweight, biocompatible, having flexible interconnects, without an underfill. Reliability tests demonstrated minimal increases of 0.35 mΩ, 0.23 mΩ and 0.15 mΩ in mean contact resistances under high humidity, thermal cycling, and thermal shock conditions respectively. High temperature tests resulted in an increase in resistance of > 90 mΩ when aluminum bond pads were used, but an increase of ~ 4.2 mΩ with gold bond pads. The mean-time-to-failure (MTTF) was estimated to be at least one year under physiological conditions. We conclude that MMFI technology is a feasible and reliable approach for packaging and interconnecting Bio-MEMS devices. PMID:20160981

Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.

PubMed

Zhang, Xiang; Zhao, Jianwen; Dou, Junyan; Tange, Masayoshi; Xu, Weiwei; Mo, Lixin; Xie, Jianjun; Xu, Wenya; Ma, Changqi; Okazaki, Toshiya; Cui, Zheng

2016-09-01

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO 2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10 5 , mobility of ≈15 cm 2 V -1 s -1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V dd = 1.5 V) and maximum voltage gain of 30 at V dd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V dd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V dd of 1 V is achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

DOEpatents

Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

2015-02-03

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Fabrication of terahertz metamaterials using electrohydrodynamic jet printing for sensitive detection of yeast

NASA Astrophysics Data System (ADS)

Pradhipta Tenggara, Ayodya; Park, S. J.; Teguh Yudistira, Hadi; Ahn, Y. H.; Byun, Doyoung

2017-03-01

We demonstrated the fabrication of terahertz metamaterial sensor for the accurate and on-site detection of yeast using electrohydrodynamic jet printing, which is inexpensive, simple, and environmentally friendly. The very small sized pattern up to 5 µm-width of electrical split ring resonator unit structures could be printed on a large area on both a rigid substrate and flexible substrate, i.e. silicon wafer and polyimide film using the drop on demand technique to eject liquid ink containing silver nanoparticles. Experimental characterization and simulation were performed to study their performances in detecting yeast of different weights. It was shown that the metamaterial sensor fabricated on a flexible polyimide film had higher sensitivity by more than six times than the metamaterial sensor fabricated on a silicon wafer, due to the low refractive index of the PI substrate and due to the extremely thin substrate thickness which lowers the effective index further. The resonance frequency shift saturated when the yeast weights were 145 µg and 215 µg for metamaterial structures with gap size 6.5 µm fabricated on the silicon substrate and on the polyimide substrate, respectively.

A dual-scale metal nanowire network transparent conductor for highly efficient and flexible organic light emitting diodes.

PubMed

Lee, Jinhwan; An, Kunsik; Won, Phillip; Ka, Yoonseok; Hwang, Hyejin; Moon, Hyunjin; Kwon, Yongwon; Hong, Sukjoon; Kim, Changsoon; Lee, Changhee; Ko, Seung Hwan

2017-02-02

Although solution processed metal nanowire (NW) percolation networks are a strong candidate to replace commercial indium tin oxide, their performance is limited in thin film device applications due to reduced effective electrical areas arising from the dimple structure and percolative voids that single size metal NW percolation networks inevitably possess. Here, we present a transparent electrode based on a dual-scale silver nanowire (AgNW) percolation network embedded in a flexible substrate to demonstrate a significant enhancement in the effective electrical area by filling the large percolative voids present in a long/thick AgNW network with short/thin AgNWs. As a proof of concept, the performance enhancement of a flexible phosphorescent OLED is demonstrated with the dual-scale AgNW percolation network compared to the previous mono-scale AgNWs. Moreover, we report that mechanical and oxidative robustness, which are critical for flexible OLEDs, are greatly increased by embedding the dual-scale AgNW network in a resin layer.

Direct X-ray photoconversion in flexible organic thin film devices operated below 1 V

PubMed Central

Basiricò, Laura; Ciavatti, Andrea; Cramer, Tobias; Cosseddu, Piero; Bonfiglio, Annalisa; Fraboni, Beatrice

2016-01-01

The application of organic electronic materials for the detection of ionizing radiations is very appealing thanks to their mechanical flexibility, low-cost and simple processing in comparison to their inorganic counterpart. In this work we investigate the direct X-ray photoconversion process in organic thin film photoconductors. The devices are realized by drop casting solution-processed bis-(triisopropylsilylethynyl)pentacene (TIPS-pentacene) onto flexible plastic substrates patterned with metal electrodes; they exhibit a strong sensitivity to X-rays despite the low X-ray photon absorption typical of low-Z organic materials. We propose a model, based on the accumulation of photogenerated charges and photoconductive gain, able to describe the magnitude as well as the dynamics of the X-ray-induced photocurrent. This finding allows us to fabricate and test a flexible 2 × 2 pixelated X-ray detector operating at 0.2 V, with gain and sensitivity up to 4.7 × 104 and 77,000 nC mGy−1 cm−3, respectively. PMID:27708274

Buckling analysis of stiff thin films suspended on a substrate with tripod surface relief structure

NASA Astrophysics Data System (ADS)

Yu, Qingmin; Chen, Furong; Li, Ming; Cheng, Huanyu

2017-09-01

A wavy configuration is a simple yet powerful structural design strategy, which has been widely used in flexible and stretchable electronics. A buckled structure created from a prestretch-contact-release process represents an early effort. Substrates with engineered surface relief structures (e.g., rectangular islands or tripod structure) have enabled stretchability to the devices without sacrificing their electric performance (e.g., high areal coverage for LEDs/photovoltaics/batteries/supercapacitors). In particular, the substrate with a tripod surface relief structure allows wrinkled devices to be suspended on a soft tripod substrate. This minimizes the contact area between devices and the deformed substrate, which contributes to a significantly reduced interfacial stress/strain. To uncover the underlying mechanism of such a design, we exploit the energy method to analytically investigate the buckling and postbuckling behaviors of stiff films suspended on a stretchable polymeric substrate with a tripod surface relief structure. Validated by finite element analysis, the predications from such an analytical study elucidate the deformed profile and maximum strain in the buckled and postbuckled stiff thin device films, providing a useful toolkit for future experimental designs.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae

2007-07-01

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.

Structural and electrical properties of Ag grid/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) coatings for diode application through advanced printing technology.

PubMed

Duraisamy, Navaneethan; Ponniah, Ganeshthangaraj; Jo, Jeongdai; Choi, Kyung-Hyun

2013-08-01

This paper is focused on printed techniques for the fabrication of hybrid structure of silver (Ag) grid/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) (PEDOT:PSS) on polyethylene terepthalate (PET) as a flexible substrate. Ag grid has been printed on PET substrate by using gravure offset printing process, followed by PEDOT:PSS thin film deposition on Ag grid through electrohydrodynamic atomization (EHDA) technique. The important parameters for achieving uniform hybrid structure of Ag grid/PEDOT:PSS through printed techniques have been clearly discussed. Field emission scanning electron microscope studies revealed the uniformity of printed Ag grid with homogeneous deposition of PEDOT:PSS on Ag grid. The optical properties of Ag grid/PEDOT:PSS were measured by UV-visible spectroscopy, which showed nearly 80-82% of transparency in the visible region and it was nearly same as PEDOT:PSS thin film on PET substrate. Current-voltage (I-V) analysis of fabricated hybrid device by using printed Ag grid/PEDOT:PSS as a bottom electrode showed good rectifying behavior with possible interfacial mechanisms. Capacitance-voltage (C-V) analysis was carried over different frequencies. These results suggest that fabrication of hybrid structure through printed techniques will play a significant role in mass production of printed electronic devices for commercial application by using flexible substrate.

A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

PubMed

Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

2016-11-16

A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A 2 ; best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

PubMed

Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

2016-03-01

We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

NASA Astrophysics Data System (ADS)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery

PubMed Central

Vereecken, Philippe M.

2018-01-01

Abstract The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li4Ti5O12, LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime. PMID:29868149

Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dufay, T.; Guiffard, B.; Seveno, R.

Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beammore » displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.« less

Water-Soluble Epitaxial NaCl Thin Film for Fabrication of Flexible Devices.

PubMed

Lee, Dong Kyu; Kim, Sungjoo; Oh, Sein; Choi, Jae-Young; Lee, Jong-Lam; Yu, Hak Ki

2017-08-18

We studied growth mechanisms of water-soluble NaCl thin films on single crystal substrates. Epitaxial growth of NaCl(100) on Si(100) and domain-matched growth of NaCl(111) on c-sapphire were obtained at thicknesses below 100 nm even at room temperature from low lattice mismatches in both cases. NaCl thin film, which demonstrates high solubility selectivity for water, was successfully applied as a water-soluble sacrificial layer for fabrication of several functional materials, such as WO 3 nano-helix and Sn doped In 2 O 3 nano-branches.

Transparent SiON/Ag/SiON multilayer passivation grown on a flexible polyethersulfone substrate using a continuous roll-to-roll sputtering system

PubMed Central

2012-01-01

We have investigated the characteristics of a silicon oxynitride/silver/silicon oxynitride [SiON/Ag/SiON] multilayer passivation grown using a specially designed roll-to-roll [R2R] sputtering system on a flexible polyethersulfone substrate. Optical, structural, and surface properties of the R2R grown SiON/Ag/SiON multilayer were investigated as a function of the SiON thickness at a constant Ag thickness of 12 nm. The flexible SiON/Ag/SiON multilayer has a high optical transmittance of 87.7% at optimized conditions due to the antireflection and surface plasmon effects in the oxide-metal-oxide structure. The water vapor transmission rate of the SiON/Ag/SiON multilayer is 0.031 g/m2 day at an optimized SiON thickness of 110 nm. This indicates that R2R grown SiON/Ag/SiON is a promising thin-film passivation for flexible organic light-emitting diodes and flexible organic photovoltaics due to its simple and low-temperature process. PMID:22221400

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2016-02-09

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

Superhydrophobicity enhancement through substrate flexibility.

PubMed

Vasileiou, Thomas; Gerber, Julia; Prautzsch, Jana; Schutzius, Thomas M; Poulikakos, Dimos

2016-11-22

Inspired by manifestations in nature, microengineering and nanoengineering of synthetic materials to achieve superhydrophobicity has been the focus of much work. Generally, hydrophobicity is enhanced through the combined effects of surface texturing and chemistry; being durable, rigid materials are the norm. However, many natural and technical surfaces are flexible, and the resulting effect on hydrophobicity has been largely ignored. Here, we show that the rational tuning of flexibility can work synergistically with the surface microtexture or nanotexture to enhance liquid repellency performance, characterized by impalement and breakup resistance, contact time reduction, and restitution coefficient increase. Reduction in substrate areal density and stiffness imparts immediate acceleration and intrinsic responsiveness to impacting droplets (∼350 × g), mitigating the collision and lowering the impalement probability by ∼60% without the need for active actuation. Furthermore, we exemplify the above discoveries with materials ranging from man-made (thin steel or polymer sheets) to nature-made (butterfly wings).

Scalable fabrication of nanomaterials based piezoresistivity sensors with enhanced performance

NASA Astrophysics Data System (ADS)

Hoang, Phong Tran

Nanomaterials are small structures that have at least one dimension less than 100 nanometers. Depending on the number of dimensions that are not confined to the nanoscale range, nanomaterials can be classified into 0D, 1D and 2D types. Due to their small sizes, nanoparticles possess exceptional physical and chemical properties which opens a unique possibility for the next generation of strain sensors that are cheap, multifunctional, high sensitivity and reliability. Over the years, thanks to the development of new nanomaterials and the printing technologies, a number of printing techniques have been developed to fabricate a wide range of electronic devices on diverse substrates. Nanomaterials based thin film devices can be readily patterned and fabricated in a variety of ways, including printing, spraying and laser direct writing. In this work, we review the piezoresistivity of nanomaterials of different categories and study various printing approaches to utilize their excellent properties in the fabrication of scalable and printable thin film strain gauges. CNT-AgNP composite thin films were fabricated using a solution based screen printing process. By controlling the concentration ratio of CNTs to AgNPs in the nanocomposites and the supporting substrates, we were able to engineer the crack formation to achieve stable and high sensitivity sensors. The crack formation in the composite films lead to piezoresistive sensors with high GFs up to 221.2. Also, with a simple, low cost, and easy to scale up fabrication process they may find use as an alternative to traditional strain sensors. By using computer controlled spray coating system, we can achieve uniform and high quality CNTs thin films for the fabrication of strain sensors and transparent / flexible electrodes. A simple diazonium salt treatment of the pristine SWCNT thin film has been identified to be efficient in greatly enhancing the piezoresistive sensitivity of SWCNT thin film based piezoresistive sensors. The coupled mechanical stretching and Raman band shift characterization provides strong evidence to support this point of view. The same approach should be applicable to other types of carbon based strain sensors for improving their sensitivity. The direct laser writing (DLW) method has been used for producing flexible piezoresistive sensor and sensor arrays on polyimide film substrates. The effect of CO2 laser irradiation conditions on the morphology, chemical composition and piezoresistivity of the formed graphitic line features were systematically studied to establish the related processing-structure-property relationship. The DLW generated sensors have been demonstrated for their use as strain gauges for structural health monitoring of polymeric composites, and as flexible and wearable sensors of gesture recognition for human-machine interactions. The versatility of the DLW technique demonstrated in this work can be highly valuable in different industrial sectors for developing customized flexible electronics.

Linking Precursor Alterations to Nanoscale Structure and Optical Transparency in Polymer Assisted Fast-Rate Dip-Coating of Vanadium Oxide Thin Films

PubMed Central

Glynn, Colm; Creedon, Donal; Geaney, Hugh; Armstrong, Eileen; Collins, Timothy; Morris, Michael A.; Dwyer, Colm O’

2015-01-01

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness. PMID:26123117

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties.

PubMed

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj; Deferme, Wim

2018-02-13

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10-20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

Effects of device size and material on the bending performance of resistive-switching memory devices fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Lee, Won-Ho; Yoon, Sung-Min

2017-05-01

The resistive change memory (RCM) devices using amorphous In-Ga-Zn-O (IGZO) and microcrystalline Al-doped ZnO (AZO) thin films were fabricated on plastic substrates and characterized for flexible electronic applications. The device cell sizes were varied to 25 × 25, 50 × 50, 100 × 100, and 200 × 200 μm2 to examine the effects of cell size on the resistive-switching (RS) behaviors at a flat state and under bending conditions. First, it was found that the high-resistance state programmed currents markedly increased with the increase in the cell size. Second, while the AZO RCM devices did not exhibit RESET operations at a curvature radius smaller than 8.0 mm, the IGZO RCM devices showed sound RS behaviors even at a curvature radius of 4.5 mm. Third, for the IGZO RCM devices with the cell size bigger than 100 × 100 μm2, the RESET operation could not be performed at a curvature radius smaller than 6.5 mm. Thus, it was elucidated that the RS characteristics of the flexible RCM devices using oxide semiconductor thin films were closely related to the types of RS materials and the cell size of the device.

Room-Temperature and Solution-Processable Cu-Doped Nickel Oxide Nanoparticles for Efficient Hole-Transport Layers of Flexible Large-Area Perovskite Solar Cells.

PubMed

He, Qiqi; Yao, Kai; Wang, Xiaofeng; Xia, Xuefeng; Leng, Shifeng; Li, Fan

2017-12-06

Flexible perovskite solar cells (PSCs) using plastic substrates have become one of the most attractive points in the field of thin-film solar cells. Low-temperature and solution-processable nanoparticles (NPs) enable the fabrication of semiconductor thin films in a simple and low-cost approach to function as charge-selective layers in flexible PSCs. Here, we synthesized phase-pure p-type Cu-doped NiO x NPs with good electrical properties, which can be processed to smooth, pinhole-free, and efficient hole transport layers (HTLs) with large-area uniformity over a wide range of film thickness using a room-temperature solution-processing technique. Such a high-quality inorganic HTL allows for the fabrication of flexible PSCs with an active area >1 cm 2 , which have a power conversion efficiency over 15.01% without hysteresis. Moreover, the Cu/NiO x NP-based flexible devices also demonstrate excellent air stability and mechanical stability compared to their counterpart fabricated on the pristine NiO x films. This work will contribute to the evolution of upscaling flexible PSCs with a simple fabrication process and high device performances.

Elastic Moduli of Nanoparticle-Polymer Composite Thin Films via Buckling on Elastomeric Substrates

NASA Astrophysics Data System (ADS)

Yuan, Hongyi; Karim, Alamgir; University of Akron Team

2011-03-01

Polymeric thin films find applications in diverse areas such as coatings, barriers and packaging. The dispersion of nanoparticles into the films was proven to be an effective method to generate tunable properties, particularly mechanical strength. However, there are very few methods for mechanical characterization of the composite thin films with high accuracy. In this study, nanometric polystyrene and polyvinyl alcohol films with uniformly dispersed cobalt and Cloisite nanoparticles at varying concentrations were synthesized via flow-coating and then transferred to crosslinked polydimethylsiloxane (PDMS) flexible substrates. The technique of Strain-Induced Elastic Buckling Instability for Mechanical Measurements (SIEBIMM) was employed to determine the elastic moduli of the films, which were calculated from the buckling patterns generated by applying compressive stresses. Results on moduli of films as a function of the concentrations of nanoparticles and the thicknesses of the composite films will be presented. *Corresponding author: alamgir@uakron.edu

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

PubMed

Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

2013-05-10

Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.

Surface-restrained growth of vertically aligned carbon nanotube arrays with excellent thermal transport performance.

PubMed

Ping, Linquan; Hou, Peng-Xiang; Liu, Chang; Li, Jincheng; Zhao, Yang; Zhang, Feng; Ma, Chaoqun; Tai, Kaiping; Cong, Hongtao; Cheng, Hui-Ming

2017-06-22

A vertically aligned carbon nanotube (VACNT) array is a promising candidate for a high-performance thermal interface material in high-power microprocessors due to its excellent thermal transport property. However, its rough and entangled free tips always cause poor interfacial contact, which results in serious contact resistance dominating the total thermal resistance. Here, we employed a thin carbon cover to restrain the disorderly growth of the free tips of a VACNT array. As a result, all the free tips are seamlessly connected by this thin carbon cover and the top surface of the array is smoothed. This unique structure guarantees the participation of all the carbon nanotubes in the array in the heat transport. Consequently the VACNT array grown on a Cu substrate shows a record low thermal resistance of 0.8 mm 2 K W -1 including the two-sided contact resistances, which is 4 times lower than the best result previously reported. Remarkably, the VACNT array can be easily peeled away from the Cu substrate and act as a thermal pad with excellent flexibility, adhesive ability and heat transport capability. As a result the CNT array with a thin carbon cover shows great potential for use as a high-performance flexible thermal interface material.

Status Report and Lessons Learned from the Univ. of Arizona NMSD

NASA Technical Reports Server (NTRS)

Baiocchi, Dave; Burge, Jim

2003-01-01

We will present the latest generation of space mirror technology being developed at the Univ. of Arizona (UA). Unlike conventional monolithic mirrors, the UA mirrors are completely active in their operation. This allows greater flexibility in the mass, volume and performance specifications. The UA mirror design uses a thin flexible substrate for the optical surface and an actuated lightweight structure for surface accuracy and support. We provide an update on the UA NGST Mirror System Demonstrator (NMSD). The 2-m, f/5 NMSD mirror uses a 2 mm thick glass substrate and weighs 86 pounds. We review the mirror's design, discuss the mythology schemes used to actuate the figure, and present a list of the lessons learned.

Wafer scale fabrication of carbon nanotube thin film transistors with high yield

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Boyuan; Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn; Yan, Qiuping

Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratiomore » (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.« less

Atomic force microscopy and nanoindentation investigation of polydimethylsiloxane elastomeric substrate compliancy for various sputtered thin film morphologies.

PubMed

Maji, Debashis; Das, Soumen

2018-03-01

Crack free electrically continuous metal thin films over soft elastomeric substrates play an integral part in realization of modern day flexible bioelectronics and biosensors. Under nonoptimized deposition conditions, delamination, and/or cracking of the top film as well as the underlying soft substrate hinders optimal performance of these devices. Hence it is very important to understand and control not only the various deposition factors like power, time, or deposition pressure but also investigate the various interfacial physics playing a critical role in assuring thin film adhesion and substrate compliancy. In the present study, various nanomechanical information of the underlying substrate, namely, crack profile, average roughness, Young's modulus, and adhesion force were studied for uncracked and cracked polydimethylsiloxane (PDMS) surfaces along with pristine and conventional plasma treated PDMS samples as control. Quantification of the above parameters were done using three-dimensional surface profiler, scanning electron microscopy, nanoindentation, and atomic force microscopy techniques to elucidate the modulus range, average roughness, and adhesion force. Comparative analysis with control revealed remarkable similarity between increased modulus values, increased surface roughness, and reduced adhesion force accounting for reduced substrate compliancy and resulting in film cracking or buckling which are critical for development of various bioflexible devices. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 106A: 725-737, 2018. © 2017 Wiley Periodicals, Inc.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

PubMed

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Fabrication of silicon films from patterned protruded seeds

NASA Astrophysics Data System (ADS)

Zeng, Huang; Zhang, Wei; Li, Jizhou; Wang, Cong; Yang, Hui; Chen, Yigang; Chen, Xiaoyuan; Liu, Dongfang

2017-05-01

Thin, flexible silicon crystals are starting up applications such as light-weighted flexible solar cells, SOI, flexible IC chips, 3D ICs imagers and 3D CMOS imagers on the demand of high performance with low cost. Kerfless wafering technology by direct conversion of source gases into mono-crystalline wafers on reusable substrates is highly cost-effective and feedstock-effective route to cheap wafers with the thickness down to several microns. Here we show a prototype for direct conversion of silicon source gases to wafers by using the substrate with protruded seeds. A reliable and controllable method of wafer-scaled preparation of protruded seed patterns has been developed by filling liquid wax into a rod array as the mask for the selective removal of oxide layer on the rod head. Selectively epitaxial growth is performed on the protruded seeds, and the voidless film is formed by the merging of neighboring seeds through growing. And structured hollows are formed between the grown film and the substrate, which would offer the transferability of the grown film and the reusability of the protruded seeds.

Transparent anodic TiO2 nanotube arrays on plastic substrates for disposable biosensors and flexible electronics.

PubMed

Farsinezhad, Samira; Mohammadpour, Arash; Dalrymple, Ashley N; Geisinger, Jared; Kar, Piyush; Brett, Michael J; Shankar, Karthik

2013-04-01

Exploitation of anodically formed self-organized TiO2 nanotube arrays in mass-manufactured, disposable biosensors, rollable electrochromic displays and flexible large-area solar cells would greatly benefit from integration with transparent and flexible polymeric substrates. Such integration requires the vacuum deposition of a thin film of titanium on the desired substrate, which is then anodized in suitable media to generate TiO2 nanotube arrays. However the challenges associated with control of Ti film morphology, nanotube array synthesis conditions, and film adhesion and transparency, have necessitated the use of substrate heating during deposition to temperatures of at least 300 degrees C and as high as 500 degrees C to generate highly ordered open-pore nanotube arrays, thus preventing the use of polymeric substrates. We report on a film growth technique that exploits atomic peening to achieve high quality transparent TiO2 nanotube arrays with lengths up to 5.1 microm at room temperature on polyimide substrates without the need for substrate heating or substrate biasing or a Kauffman ion source. The superior optical quality and uniformity of the nanotube arrays was evidenced by the high specular reflectivity and the smooth pattern of periodic interferometric fringes in the transmission spectra of the nanotube arrays, from which the wavelength-dependent effective refractive index was extracted for the air-TiO2 composite medium. A fluorescent immunoassay biosensor constructed using 5.1 microm-long transparent titania nanotube arrays (TTNAs) grown on Kapton substrates detected human cardiac troponin I at a concentration of 0.1 microg ml(-1).

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Sakai, Masatoshi; Koh, Tokuyuki; Toyoshima, Kenji; Nakamori, Kouta; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Shinamura, Shoji; Kudo, Kazuhiro

2017-07-01

A solvent-free printing process for printed electronics is successfully developed using toner-type patterning of organic semiconductor toner particles and the subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors are prepared by electrically distributing the charged toner onto a Au electrode on a substrate film, followed by thermal lamination. The thermal lamination is effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

Fabrication Techniques for Unusual Electronic Systems: Silicon Microstructures for Photovoltaic Modules

ERIC Educational Resources Information Center

Baca, Alfred

2009-01-01

Electronics that can cover large areas, often referred to as macroelectronics, has received increasing attention over the past decade mainly due to it use in display systems, but increasingly due to certain forms of macroelectronics that can be integrated with thin plastic sheets or elastomeric substrates to yield mechanically flexible and…

Effects of UV Aging on the Cracking of Titanium Oxide Layer on Poly(ethylene terephthalate) Substrate: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chao; Gray, Matthew H.; Tirawat, Robert

Thin oxide and metal films deposited on polymer substrates is an emerging technology for advanced reflectors for concentrated solar power applications, due to their unique combination of light weight, flexibility and inexpensive manufacture. Thus far, there is little knowledge on the mechanical integrity or structural persistence of such multi-layer thin film systems under long-term environmental aging. In this paper, the cracking of a brittle titanium dioxide layer deposited onto elasto-plastic poly(ethylene terephthalate) (PET) substrate is studied through a combination of experiment and modeling. In-situ fragmentation tests have been conducted to monitor the onset and evolution of cracks both on pristinemore » and on samples aged with ultraviolet (UV) light. An analytical model is presented to simulate the cracking behavior and to predict the effects of UV aging. Based on preliminary experimental observation, the effect of aging is divided into three aspects and analyzed independently: mechanical property degradation of the polymer substrate; degradation of the interlayer between substrate and oxide coating; and internal stress-induced cracks on the oxide coating.« less

Integration of active devices on smart polymers for neural interfaces

NASA Astrophysics Data System (ADS)

Avendano-Bolivar, Adrian Emmanuel

The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of reliability of widely used Parylene-c encapsulation for in vivo conditions for thin film transistors is presented. These various inquiries, taken in their entirety, facilitate understanding of fundamental problems for biocompatible, chronic electronic device implants in the body, leading to a new set of tools and devices that will help understand complex problems in neuroscience and materials research.

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Flexible Chip Scale Package and Interconnect for Implantable MEMS Movable Microelectrodes for the Brain.

PubMed

Jackson, Nathan; Muthuswamy, Jit

2009-04-01

We report here a novel approach called MEMS microflex interconnect (MMFI) technology for packaging a new generation of Bio-MEMS devices that involve movable microelectrodes implanted in brain tissue. MMFI addresses the need for (i) operating space for movable parts and (ii) flexible interconnects for mechanical isolation. We fabricated a thin polyimide substrate with embedded bond-pads, vias, and conducting traces for the interconnect with a backside dry etch, so that the flexible substrate can act as a thin-film cap for the MEMS package. A double gold stud bump rivet bonding mechanism was used to form electrical connections to the chip and also to provide a spacing of approximately 15-20 µm for the movable parts. The MMFI approach achieved a chip scale package (CSP) that is lightweight, biocompatible, having flexible interconnects, without an underfill. Reliability tests demonstrated minimal increases of 0.35 mΩ, 0.23 mΩ and 0.15 mΩ in mean contact resistances under high humidity, thermal cycling, and thermal shock conditions respectively. High temperature tests resulted in an increase in resistance of > 90 mΩ when aluminum bond pads were used, but an increase of ~ 4.2 mΩ with gold bond pads. The mean-time-to-failure (MTTF) was estimated to be at least one year under physiological conditions. We conclude that MMFI technology is a feasible and reliable approach for packaging and interconnecting Bio-MEMS devices.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications.

PubMed

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-22

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

NASA Astrophysics Data System (ADS)

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

PubMed Central

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-01-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows. PMID:27653830

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

PubMed

Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

2015-03-04

A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

Producing smart sensing films by means of organic field effect transistors.

PubMed

Manunza, Ileana; Orgiu, Emanuele; Caboni, Alessandra; Barbaro, Massimo; Bonfiglio, Annalisa

2006-01-01

We have fabricated the first example of totally flexible field effect device for chemical detection based on an organic field effect transistor (OFET) made by pentacene films grown on flexible plastic structures. The ion sensitivity is achieved by employing a thin Mylar foil as gate dielectric. A sensitivity of the device to the pH of the electrolyte solution has been observed A similar structure can be used also for detecting mechanical deformations on flexible surfaces. Thanks to the flexibility of the substrate and the low cost of the employed technology, these devices open the way for the production of flexible chemical and strain gauge sensors that can be employed in a variety of innovative applications such as wearable electronics, e-textiles, new man-machine interfaces.

A Thin Film Flexible Supercapacitor Based on Oblique Angle Deposited Ni/NiO Nanowire Arrays.

PubMed

Ma, Jing; Liu, Wen; Zhang, Shuyuan; Ma, Zhe; Song, Peishuai; Yang, Fuhua; Wang, Xiaodong

2018-06-11

With high power density, fast charging-discharging speed, and a long cycling life, supercapacitors are a kind of highly developed novel energy-storage device that has shown a growing performance and various unconventional shapes such as flexible, linear-type, stretchable, self-healing, etc. Here, we proposed a rational design of thin film, flexible micro-supercapacitors with in-plane interdigital electrodes, where the electrodes were fabricated using the oblique angle deposition technique to grow oblique Ni/NiO nanowire arrays directly on polyimide film. The obtained electrodes have a high specific surface area and good adhesion to the substrate compared with other in-plane micro-supercapacitors. Meanwhile, the as-fabricated micro-supercapacitors have good flexibility and satisfactory energy-storage performance, exhibiting a high specific capacity of 37.1 F/cm³, a high energy density of 5.14 mWh/cm³, a power density of up to 0.5 W/cm³, and good stability during charge-discharge cycles and repeated bending-recovery cycles, respectively. Our micro-supercapacitors can be used as ingenious energy storage devices for future portable and wearable electronic applications.

Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays.

PubMed

Hanna, Amir Nabil; Kutbee, Arwa Talal; Subedi, Ram Chandra; Ooi, Boon; Hussain, Muhammad Mustafa

2018-01-01

A novel wavy-shaped thin-film-transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn-on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor's width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)-based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low-power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

NASA Astrophysics Data System (ADS)

Madaria, Anuj R.; Kumar, Akshay; Zhou, Chongwu

2011-06-01

The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σDC/σOp, for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, ΦTE. Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

Biodegradable neural cell culture sheet made of poly(lactic-co-glycolic acid) thin film with micropatterns of Dulbecco’s phosphate-buffered saline (-) containing laminin layers

NASA Astrophysics Data System (ADS)

Nakamura, Yuki; Horiuchi, Shunpu; Nishioka, Yasushiro

2018-02-01

In the regenerative medicine field of nervous systems, techniques used to fabricate microstructures of neurons on flexible and biodegradable substrates have attracted attention. In this research, biodegradable and flexible neuron culture thin films that enable the selective axonal outgrowth of neurons were fabricated using poly(lactic-co-glycolic acid) (PLGA) thin films with micropatterns of Dulbecco’s phosphate-buffered saline (D-PBS) (-) containing laminin layers. The 100-µm-thick PLGA thin films were fabricated by diluting PLGA in acetone (5% w/w) and the solution was distributed onto a poly(dimethylsiloxane) (PDMS) mold. D-PBS (-) micropatterns containing laminin layers with widths of 10-150 µm were fabricated by micromolding in capillaries (MIMIC) and the microstencil method. Rat neurons were selectively cultured for 3 d on the laminin micropatterns; using the MIMIC method, the cells properly adhered to a pattern wider than 30 µm, while with the microstencil method, the necessary pattern width for proper adhesion was more than 50 µm.

Parylene C-Based Flexible Electronics for pH Monitoring Applications

PubMed Central

Trantidou, Tatiana; Tariq, Mehvesh; Terracciano, Cesare M.; Toumazou, Christofer; Prodromakis, Themistoklis

2014-01-01

Emerging materials in the field of implantable sensors should meet the needs for biocompatibility; transparency; flexibility and integrability. In this work; we present an integrated approach for implementing flexible bio-sensors based on thin Parylene C films that serve both as flexible support substrates and as active H+ sensing membranes within the same platform. Using standard micro-fabrication techniques; a miniaturized 40-electrode array was implemented on a 5 μm-thick Parylene C film. A thin capping film (1 μm) of Parylene on top of the array was plasma oxidized and served as the pH sensing membrane. The sensor was evaluated with the use of extended gate discrete MOSFETs to separate the chemistry from the electronics and prolong the lifetime of the sensor. The chemical sensing array spatially maps the local pH levels; providing a reliable and rapid-response (<5 s) system with a sensitivity of 23 mV/pH. Moreover; it preserves excellent encapsulation integrity and low chemical drifts (0.26–0.38 mV/min). The proposed approach is able to deliver hybrid flexible sensing platforms that will facilitate concurrent electrical and chemical recordings; with application in real-time physiological recordings of organs and tissues. PMID:24988379

Parylene C-based flexible electronics for pH monitoring applications.

PubMed

Trantidou, Tatiana; Tariq, Mehvesh; Terracciano, Cesare M; Toumazou, Christofer; Prodromakis, Themistoklis

2014-07-01

Emerging materials in the field of implantable sensors should meet the needs for biocompatibility; transparency; flexibility and integrability. In this work; we present an integrated approach for implementing flexible bio-sensors based on thin Parylene C films that serve both as flexible support substrates and as active H(+) sensing membranes within the same platform. Using standard micro-fabrication techniques; a miniaturized 40-electrode array was implemented on a 5 μm-thick Parylene C film. A thin capping film (1 μm) of Parylene on top of the array was plasma oxidized and served as the pH sensing membrane. The sensor was evaluated with the use of extended gate discrete MOSFETs to separate the chemistry from the electronics and prolong the lifetime of the sensor. The chemical sensing array spatially maps the local pH levels; providing a reliable and rapid-response (<5 s) system with a sensitivity of 23 mV/pH. Moreover; it preserves excellent encapsulation integrity and low chemical drifts (0.26-0.38 mV/min). The proposed approach is able to deliver hybrid flexible sensing platforms that will facilitate concurrent electrical and chemical recordings; with application in real-time physiological recordings of organs and tissues.

Highly Flexible and Planar Supercapacitors Using Graphite Flakes/Polypyrrole in Polymer Lapping Film.

PubMed

Raj, C Justin; Kim, Byung Chul; Cho, Won-Je; Lee, Won-gil; Jung, Sang-Don; Kim, Yong Hee; Park, Sang Yeop; Yu, Kook Hyun

2015-06-24

Flexible supercapacitor electrodes have been fabricated by simple fabrication technique using graphite nanoflakes on polymer lapping films as flexible substrate. An additional thin layer of conducting polymer polypyrrole over the electrode improved the surface conductivity and exhibited excellent electrochemical performances. Such capacitor films showed better energy density and power density with a maximum capacitance value of 37 mF cm(-2) in a half cell configuration using 1 M H2SO4 electrolyte, 23 mF cm(-2) in full cell, and 6 mF cm(-2) as planar cell configuration using poly(vinyl alcohol) (PVA)/phosphoric acid (H3PO4) solid state electrolyte. Moreover, the graphite nanoflakes/polypyrrole over polymer lapping film demonstrated good flexibility and cyclic stability.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

PubMed

Oh, Tae-Yeon; Jeong, Shin Woo; Chang, Seongpil; Park, Jung-Ho; Kim, Jong-Woo; Choi, Kookhyun; Ha, Hyeon-Jun; Hwang, Bo-Yeon; Ju, Byeong-Kwon

2013-05-01

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 degrees C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 degrees C that means the lower trap density between channel and insulator interface. The device annealed at 60 degrees C exhibits a saturation mobility of 1.99 cm2/V x s, an on/off ratio of 1.87 x 10(4), and a subthreshold slope of 2.5 V/decade.

Thin film solar cell configuration and fabrication method

DOEpatents

Menezes, Shalini

2009-07-14

A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate

NASA Astrophysics Data System (ADS)

Yi, Zhiran; Yang, Bin; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng

2017-07-01

This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

NASA Astrophysics Data System (ADS)

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

2017-10-01

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Superstrong encapsulated monolayer graphene by the modified anodic bonding

NASA Astrophysics Data System (ADS)

Jung, Wonsuk; Yoon, Taeshik; Choi, Jongho; Kim, Soohyun; Kim, Yong Hyup; Kim, Taek-Soo; Han, Chang-Soo

2013-12-01

We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m-2 about 310% that of van der Waals bonding (0.45 J m-2) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m-2 about 310% that of van der Waals bonding (0.45 J m-2) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03822j

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms.

PubMed

Kim, Tae-Young; Ha, Jewook; Cho, Kyungjune; Pak, Jinsu; Seo, Jiseok; Park, Jongjang; Kim, Jae-Keun; Chung, Seungjun; Hong, Yongtaek; Lee, Takhee

2017-10-24

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have gained considerable attention as an emerging semiconductor due to their promising atomically thin film characteristics with good field-effect mobility and a tunable band gap energy. However, their electronic applications have been generally realized with conventional inorganic electrodes and dielectrics implemented using conventional photolithography or transferring processes that are not compatible with large-area and flexible device applications. To facilitate the advantages of 2D TMDCs in practical applications, strategies for realizing flexible and transparent 2D electronics using low-temperature, large-area, and low-cost processes should be developed. Motivated by this challenge, we report fully printed transparent chemical vapor deposition (CVD)-synthesized monolayer molybdenum disulfide (MoS 2 ) phototransistor arrays on flexible polymer substrates. All the electronic components, including dielectric and electrodes, were directly deposited with mechanically tolerable organic materials by inkjet-printing technology onto transferred monolayer MoS 2 , and their annealing temperature of <180 °C allows the direct fabrication on commercial flexible substrates without additional assisted-structures. By integrating the soft organic components with ultrathin MoS 2 , the fully printed MoS 2 phototransistors exhibit excellent transparency and mechanically stable operation.

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

NASA Astrophysics Data System (ADS)

Goßler, Christian; Bierbrauer, Colin; Moser, Rüdiger; Kunzer, Michael; Holc, Katarzyna; Pletschen, Wilfried; Köhler, Klaus; Wagner, Joachim; Schwaerzle, Michael; Ruther, Patrick; Paul, Oliver; Neef, Jakob; Keppeler, Daniel; Hoch, Gerhard; Moser, Tobias; Schwarz, Ulrich T.

2014-05-01

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (µLEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15 µm thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50 × 50 µm2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said µLEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four µLEDs and a width of 230 µm are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60 µW at 1 mA after peel-off, corresponding to a radiant emittance of 6 mW mm-2.

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

NASA Astrophysics Data System (ADS)

Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

2017-03-01

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

Scalable Production of Mechanically Robust Antireflection Film for Omnidirectional Enhanced Flexible Thin Film Solar Cells.

PubMed

Wang, Min; Ma, Pengsha; Yin, Min; Lu, Linfeng; Lin, Yinyue; Chen, Xiaoyuan; Jia, Wei; Cao, Xinmin; Chang, Paichun; Li, Dongdong

2017-09-01

Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll-to-roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si-based triple-junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance.

Scalable Production of Mechanically Robust Antireflection Film for Omnidirectional Enhanced Flexible Thin Film Solar Cells

PubMed Central

Wang, Min; Ma, Pengsha; Lu, Linfeng; Lin, Yinyue; Chen, Xiaoyuan; Jia, Wei; Cao, Xinmin; Chang, Paichun

2017-01-01

Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll‐to‐roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si‐based triple‐junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance. PMID:28932667

Flexible surface acoustic wave strain sensor based on single crystalline LiNbO3 thin film

NASA Astrophysics Data System (ADS)

Xu, Hongsheng; Dong, Shurong; Xuan, Weipeng; Farooq, Umar; Huang, Shuyi; Li, Menglu; Wu, Ting; Jin, Hao; Wang, Xiaozhi; Luo, Jikui

2018-02-01

A flexible surface acoustic wave (SAW) strain sensor in the frequency range of 162-325 MHz was developed based on a single crystalline LiNbO3 thin film with dual resonance modes, namely, the Rayleigh mode and the thickness shear mode (TSM). This SAW sensor could handle a wide strain range up to ±3500 μɛ owing to its excellent flexibility, which is nearly six times the detecting range of bulk piezoelectric substrate based SAW strain sensors. The sensor exhibited a high sensitivity of 193 Hz/ μɛ with a maximum hysteresis less than 1.5%. The temperature coefficients of frequency, for Rayleigh and TSM modes, were -85 and -59 ppm/ °C , respectively. No visible deterioration was observed after cyclic bending for hundreds of times, showing its desirable stability and reliability. By utilizing the dual modes, the strain sensor with a self-temperature calibrated capability can be achieved. The results demonstrate that the sensor is an excellent candidate for strain sensing.

Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

PubMed

Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

2018-05-09

The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3 insulator.

A High-yield Two-step Transfer Printing Method for Large-scale Fabrication of Organic Single-crystal Devices on Arbitrary Substrates

PubMed Central

Deng, Wei; Zhang, Xiujuan; Pan, Huanhuan; Shang, Qixun; Wang, Jincheng; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2014-01-01

Single-crystal organic nanostructures show promising applications in flexible and stretchable electronics, while their applications are impeded by the large incompatibility with the well-developed photolithography techniques. Here we report a novel two-step transfer printing (TTP) method for the construction of organic nanowires (NWs) based devices onto arbitrary substrates. Copper phthalocyanine (CuPc) NWs are first transfer-printed from the growth substrate to the desired receiver substrate by contact-printing (CP) method, and then electrode arrays are transfer-printed onto the resulting receiver substrate by etching-assisted transfer printing (ETP) method. By utilizing a thin copper (Cu) layer as sacrificial layer, microelectrodes fabricated on it via photolithography could be readily transferred to diverse conventional or non-conventional substrates that are not easily accessible before with a high transfer yield of near 100%. The ETP method also exhibits an extremely high flexibility; various electrodes such as Au, Ti, and Al etc. can be transferred, and almost all types of organic devices, such as resistors, Schottky diodes, and field-effect transistors (FETs), can be constructed on planar or complex curvilinear substrates. Significantly, these devices can function properly and exhibit closed or even superior performance than the device counterparts fabricated by conventional approach. PMID:24942458

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

PubMed

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

PubMed

Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

2017-08-16

In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation based on a dielectric-metal-dielectric structure was thus effectively designed considering the transmittance, gas-permeation barrier properties, flexibility, and heat dissipation effect by exploiting the advantages of each separate layer.

Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

NASA Astrophysics Data System (ADS)

Cho, Won-Ju; Ahn, Min-Ju

2017-09-01

In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

Portable receiver for radar detection

DOEpatents

Lopes, Christopher D.; Kotter, Dale K.

2008-10-14

Various embodiments are described relating to a portable antenna-equipped device for multi-band radar detection. The detection device includes a plurality of antennas on a flexible substrate, a detection-and-control circuit, an indicator and a power source. The antenna may include one or more planar lithographic antennas that may be fabricated on a thin-film substrate. Each antenna may be tuned to a different selection frequency or band. The antennas may include a bolometer for radar detection. Each antenna may include a frequency selective surface for tuning to the selection frequency.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

PubMed Central

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

2018-01-01

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

A Consecutive Spray Printing Strategy to Construct and Integrate Diverse Supercapacitors on Various Substrates.

PubMed

Wang, Xinyu; Lu, Qiongqiong; Chen, Chen; Han, Mo; Wang, Qingrong; Li, Haixia; Niu, Zhiqiang; Chen, Jun

2017-08-30

The rapid development of printable electronic devices with flexible and wearable characteristics requires supercapacitor devices to be printable, light, thin, integrated macro- and micro-devices with flexibility. Herein, we developed a consecutive spray printing strategy to controllably construct and integrate diverse supercapacitors on various substrates. In such a strategy, all supercapacitor components are fully printable, and their thicknesses and shapes are well controlled. As a result, supercapacitors obtained by this strategy achieve diverse structures and shapes. In addition, different nanocarbon and pseudocapacitive materials are applicable for the fabrication of these diverse supercapacitors. Furthermore, the diverse supercapacitors can be readily constructed on various objects with planar, curved, or even rough surfaces (e.g., plastic film, glass, cloth, and paper). More importantly, the consecutive spray printing process can integrate several supercapacitors together in the perpendicular and parallel directions of one substrate by designing the structure of electrodes and separators. This enlightens the construction and integration of fully printable supercapacitors with diverse configurations to be compatible with fully printable electronics on various substrates.

Drop trampoline

NASA Astrophysics Data System (ADS)

Chantelot, Pierre; Coux, Martin; Clanet, Christophe; Quere, David

2017-11-01

Superhydrophobic substrates inspired from the lotus leaf have the ability to reflect impacting water drops. They do so very efficiently and contact lasts typically 10 ms for millimetric droplets. Yet unlike a lotus leaf most synthetic substrates are rigid. Focusing on the interplay between substrate flexibility and liquid repellency might allow us to understand the dynamic properties of natural surfaces. We perform liquid marbles impacts at velocity V onto thin ( 0.01 mm) stretched circular PDMS membranes. We obtain contact time reductions of up to 70%. The bouncing mechanism is drastically modified compared to that on a rigid substrate: the marble leaves the substrate while it is still spread in a disk shape as it is kicked upwards by the membrane. We show that the bouncing is controlled by an interplay between the dynamics of the drop and the membrane.

Copper cladding on polymer surfaces by ionization-assisted deposition

NASA Astrophysics Data System (ADS)

Kohno, Tomoki; Tanaka, Kuniaki; Usui, Hiroaki

2018-03-01

Copper thin films were prepared on poly(ethylene terephthalate) (PET) and polyimide (PI) substrates by an ionization-assisted vapor deposition method. The films had a polycrystalline structure, and their crystallite size decreased with increasing ion acceleration voltage V a. Ion acceleration was effective in reducing the surface roughness of the films. Cross-sectional transmission electron microscopy revealed that the copper/polymer interface showed increased corrugation with increasing V a. The increase in V a also induced the chemical modification of polymer chains of the PET substrate, but the PI substrate underwent smaller modification after ion bombardment. Most importantly, the adhesion strength between the copper film and the PET substrate increased with increasing V a. It was concluded that ionization-assisted deposition is a promising technique for preparing metal clad layers on flexible polymer substrates.

Amorphous silicon thin films: The ultimate lightweight space solar cell

NASA Technical Reports Server (NTRS)

Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

1994-01-01

Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

PubMed

Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

2016-04-01

The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

NASA Astrophysics Data System (ADS)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Flexible organic transistors and circuits with extreme bending stability

NASA Astrophysics Data System (ADS)

Sekitani, Tsuyoshi; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2010-12-01

Flexible electronic circuits are an essential prerequisite for the development of rollable displays, conformable sensors, biodegradable electronics and other applications with unconventional form factors. The smallest radius into which a circuit can be bent is typically several millimetres, limited by strain-induced damage to the active circuit elements. Bending-induced damage can be avoided by placing the circuit elements on rigid islands connected by stretchable wires, but the presence of rigid areas within the substrate plane limits the bending radius. Here we demonstrate organic transistors and complementary circuits that continue to operate without degradation while being folded into a radius of 100μm. This enormous flexibility and bending stability is enabled by a very thin plastic substrate (12.5μm), an atomically smooth planarization coating and a hybrid encapsulation stack that places the transistors in the neutral strain position. We demonstrate a potential application as a catheter with a sheet of transistors and sensors wrapped around it that enables the spatially resolved measurement of physical or chemical properties inside long, narrow tubes.

Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.

Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the devicemore » performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.« less

High-Performance Flexible Transparent Electrode with an Embedded Metal Mesh Fabricated by Cost-Effective Solution Process.

PubMed

Khan, Arshad; Lee, Sangeon; Jang, Taehee; Xiong, Ze; Zhang, Cuiping; Tang, Jinyao; Guo, L Jay; Li, Wen-Di

2016-06-01

A new structure of flexible transparent electrodes is reported, featuring a metal mesh fully embedded and mechanically anchored in a flexible substrate, and a cost-effective solution-based fabrication strategy for this new transparent electrode. The embedded nature of the metal-mesh electrodes provides a series of advantages, including surface smoothness that is crucial for device fabrication, mechanical stability under high bending stress, strong adhesion to the substrate with excellent flexibility, and favorable resistance against moisture, oxygen, and chemicals. The novel fabrication process replaces vacuum-based metal deposition with an electrodeposition process and is potentially suitable for high-throughput, large-volume, and low-cost production. In particular, this strategy enables fabrication of a high-aspect-ratio (thickness to linewidth) metal mesh, substantially improving conductivity without considerably sacrificing transparency. Various prototype flexible transparent electrodes are demonstrated with transmittance higher than 90% and sheet resistance below 1 ohm sq(-1) , as well as extremely high figures of merit up to 1.5 × 10(4) , which are among the highest reported values in recent studies. Finally using our embedded metal-mesh electrode, a flexible transparent thin-film heater is demonstrated with a low power density requirement, rapid response time, and a low operating voltage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

NASA Astrophysics Data System (ADS)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

2015-10-01

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

NASA Astrophysics Data System (ADS)

Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

2018-02-01

Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

Fabrication and characterization of low temperature polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Krishnan, Anand Thiruvengadathan

2000-10-01

The proliferation of devices with built-in displays, such as personal digital assistants and cellular phones has created a demand for rugged light-weight displays. Polymeric substrates could be suited for these applications, and they offer the possibility of flexible displays also. However, driver circuitry needs to be integrated in the display if the cost is to be reduced. Low temperature (<350°C) polycrystalline silicon (poly-Si) thin film transistors, if developed, offer driver circuitry integration during pixel transistor fabrication on top of flexible substrates. This thesis addresses several issues related to the fabrication of thin film transistors at low temperatures on glass substrates. A high-density plasma (electron cyclotron resonance (ECR)) based approach was adopted for deposition of thin films. A process for deposition of n-type doped silicon (n-type doped Si) at T < 350°C and having resistivity <1 ohm/cm has been developed. Intrinsic poly-Si was deposited under different conditions of microwave power, RF bias and deposition times. The properties of n-type doped Si and intrinsic poly-Si were correlated with the structure and the deposition conditions. A novel TFT structure has been proposed and implemented in this work. This top gate TFT structure uses n-type doped Si and utilizes only two masks and one alignment step. There are no critical etch steps and good interface quality could be obtained even without post-processing hydrogenation as the poly-Si surface was not exposed to air before deposition of the gate dielectric. TFTs using this top gate structure were fabricated with no process step exceeding 340°C electrode temperature (surface temperature <300°C). These TFTs show ON/OFF ratios in excess of 105. Their sub-threshold swing is ˜0.5 V/decade and mobility is 1--10 cm2/V-s. Several TFTs were also fabricated using alternative dielectrics such as oxide deposited from tetramethyl silane in an RFPECVD chamber and silicon nitride deposited in the ECR and these TFTs also show reasonable device characteristics. TFTs processed using this high-density plasma based approach show great potential for use in applications such as driver circuitry integration on low temperature substrates.

Flexible Sensing Arrays Fabricated with Carbon Nanofiber Composite Thin Films for Posture Monitoring

NASA Astrophysics Data System (ADS)

Chang, Fuh-Yu; Wang, Ruoh-Huey; Lin, Yu-Hsien; Chen, Tse-Min; Lee, Yueh-Feng; Huang, Shu-Jiuan; Liu, Chia-Ming

2011-06-01

Faulty posture increases joint stress and causes postural pain syndrome. In this paper, we present a portable strain sensing system with flexible sensor arrays to warn patients to correct inappropriate posture. A 3×3 flexible strain sensing array system was fabricated using patterned surface treatment and the tilted-drop process with carbon nanofiber composite solutions on polyimide substrates. Atmospheric plasma was used to enhance or reduce the surface energy in specific areas for patterned surface treatment. A scanning circuit was also developed to capture the signal from the flexible sensing array. The developed system has been used to measure the bent angle of the human neck from 15 to 60°. The results indicate that human posture can be successfully captured by analyzing the measured strains from a flexible strain sensing array.

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications.

PubMed

Ayari, Taha; Bishop, Chris; Jordan, Matthew B; Sundaram, Suresh; Li, Xin; Alam, Saiful; ElGmili, Youssef; Patriarche, Gilles; Voss, Paul L; Salvestrini, Jean Paul; Ougazzaden, Abdallah

2017-11-09

The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to wearable, mobile or disposable systems. The main keys to unlocking this pathway is to grow and fabricate the sensors on large h-BN surface and to transfer them to the flexible substrate without any degradation of the performances. In this work, we develop a new generation of AlGaN/GaN gas sensors with boosted performances on a low cost flexible substrate. We fabricate 2-inch wafer scale AlGaN/GaN gas sensors on sacrificial two-dimensional (2D) nano-layered h-BN without any delamination or cracks and subsequently transfer sensors to an acrylic surface on metallic foil. This technique results in a modification of relevant device properties, leading to a doubling of the sensitivity to NO 2 gas and a response time that is more than 6 times faster than before transfer. This new approach for GaN-based sensor design opens new avenues for sensor improvement via transfer to more suitable substrates, and is promising for next-generation wearable and portable opto-electronic devices.

Edge Delamination of Monolayer Transition Metal Dichalcogenides.

PubMed

Ly, Thuc Hue; Yun, Seok Joon; Thi, Quoc Huy; Zhao, Jiong

2017-07-25

Delamination of thin films from the supportive substrates is a critical issue within the thin film industry. The emergent two-dimensional, atomic layered materials, including transition metal dichalcogenides, are highly flexible; thus buckles and wrinkles can be easily generated and play vital roles in the corresponding physical properties. Here we introduce one kind of patterned buckling behavior caused by the delamination from a substrate initiated at the edges of the chemical vapor deposition synthesized monolayer transition metal dichalcogenides, led by thermal expansion mismatch. The atomic force microscopy and optical characterizations clearly showed the puckered structures associated with the strain, whereas the transmission electron microscopy revealed the special sawtooth-shaped edges, which break the geometrical symmetry for the buckling behavior of hexagonal samples. The condition of the edge delamination is in accordance with the fracture behavior of thin film interfaces. This edge delamination and buckling process is universal for most ultrathin two-dimensional materials, which requires more attention in various future applications.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

Deposition of amorphous carbon nitride films on flexible substrates by reactive sputtering for applications in light-driven active devices

NASA Astrophysics Data System (ADS)

Aono, Masami; Harata, Tomo; Odawara, Taku; Asai, Shinnosuke; Orihara, Dai; Nogi, Masaya

2018-01-01

Amorphous carbon nitride (a-CN x ) thin films deposited by reactive sputtering have great potential for driving source applications of light-driven active devices. We demonstrate, for the first time, the photoinduced deformation of a-CN x deposited on flexible substrates, namely, poly(ethylene naphthalate) (PEN) films and transparent cellulose nanopaper. a-CN x films without delamination were obtained on both substrates. By decreasing the thickness of PEN films, the photoinduced deformation became extremely large. A light-driven pump was fabricated using a-CN x -coated PEN films, and then the pumping motion was observed up to 10 Hz. When a He-Ne laser traced the surface of a-CN x films deposited on the nanopaper, the sample moved to the opposite side of the laser spot. The motion involved repeated expansions and contractions similar to the motion of caterpillars occurring owing to the temporary photoinduced deformation of a-CN x films.

Thin film polarizer and color filter based on photo-polymerizable nematic liquid crystal

NASA Astrophysics Data System (ADS)

Mohammadimasoudi, Mohammad; Neyts, Kristiaan; Beeckman, Jeroen

2015-03-01

We present a method to fabricate a thin film color filter based on a mixture of photo-polymerizable liquid crystal and chiral dopant. A chiral nematic liquid crystal layer reflects light for a certain wavelength interval Δλ (= Δn.P) with the period and Δn the birefringence of the liquid crystal. The reflection band is determined by the chiral dopant concentration. The bandwidth is limited to 80nm and the reflectance is at most 50% for unpolarized incident light. The thin color filter is interesting for innovative applications like polarizer-free reflective displays, polarization-independent devices, stealth technologies, or smart switchable reflective windows to control solar light and heat. The reflected light has strong color saturation without absorption because of the sharp band edges. A thin film polarizer is developed by using a mixture of photo-polymerizable liquid crystal and color-neutral dye. The fabricated thin film absorbs light that is polarized parallel to the c axis of the LC. The obtained polarization ratio is 80% for a film of only 12 μm. The thin film polarizer and the color filter feature excellent film characteristics without domains and can be detached from the substrate which is useful for e.g. flexible substrates.

Bioinspired Superhydrophobic Highly Transmissive Films for Optical Applications.

PubMed

Vüllers, Felix; Gomard, Guillaume; Preinfalk, Jan B; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce; Hölscher, Hendrik; Kavalenka, Maryna N

2016-11-01

Inspired by the transparent hair layer on water plants Salvinia and Pistia, superhydrophobic flexible thin films, applicable as transparent coatings for optoelectronic devices, are introduced. Thin polymeric nanofur films are fabricated using a highly scalable hot pulling technique, in which heated sandblasted steel plates are used to create a dense layer of nano- and microhairs surrounding microcavities on a polymer surface. The superhydrophobic nanofur surface exhibits water contact angles of 166 ± 6°, sliding angles below 6°, and is self-cleaning against various contaminants. Additionally, subjecting thin nanofur to argon plasma reverses its surface wettability to hydrophilic and underwater superoleophobic. Thin nanofur films are transparent and demonstrate reflection values of less than 4% for wavelengths ranging from 300 to 800 nm when attached to a polymer substrate. Moreover, used as translucent self-standing film, the nanofur exhibits transmission values above 85% and high forward scattering. The potential of thin nanofur films for extracting substrate modes from organic light emitting diodes is tested and a relative increase of the luminous efficacy of above 10% is observed. Finally, thin nanofur is optically coupled to a multicrystalline silicon solar cell, resulting in a relative gain of 5.8% in photogenerated current compared to a bare photovoltaic device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

DTIC Science & Technology

2011-11-30

mV[19]. In 2008, Katagiri et al ’ obtained an efficiency of 6.7% by Physical vapor methods[20]. In 2010, Mitzi et al reported an efficiency of 9.6...Films 517 (2009) 2455. [21] T.K. Todorov, K.B. Reuter, D.B. Mitzi , Adv Mater 22 (2010) El 56. 3. Energy Storage: Ultracapacitors - Professor Rastogi

25th anniversary article: CVD polymers: a new paradigm for surface modification and device fabrication.

PubMed

Coclite, Anna Maria; Howden, Rachel M; Borrelli, David C; Petruczok, Christy D; Yang, Rong; Yagüe, Jose Luis; Ugur, Asli; Chen, Nan; Lee, Sunghwan; Jo, Won Jun; Liu, Andong; Wang, Xiaoxue; Gleason, Karen K

2013-10-11

Well-adhered, conformal, thin (<100 nm) coatings can easily be obtained by chemical vapor deposition (CVD) for a variety of technological applications. Room temperature modification with functional polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, and thickness control. Initiated-CVD shows successful results in terms of rationally designed micro- and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative-CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a Self-calibrating Dissolved Oxygen Microsensor Array for the Monitoring and Control of Plant Growth in a Space Environment

NASA Technical Reports Server (NTRS)

Kim, Chang-Soo; Brown, Christopher S.; Nagle, H. Troy

2004-01-01

Plant experiments in space will require active nutrient delivery concepts in which water and nutrients are replenished on a continuous basis for long-term growth. The goal of this study is to develop a novel microsensor array to provide information on the dissolved oxygen environment in the plant root zone for the optimum control of plant cultivation systems in the space environment. Control of water and oxygen is limited by the current state-of-the-art in sensor technology. Two capabilities of the new microsensor array were tested. First, a novel in situ self-diagnosis/self-calibration capability for the microsensor was explored by dynamically controlling the oxygen microenvironment in close proximity to an amperometric dissolved oxygen microsensors. A pair of integrated electrochemical actuator electrodes provided the microenvironments based on water electrolysis. Miniaturized thin film dissolved oxygen microsensors on a flexible polyimide (Kapton(Registered Trademark)? substrate were fabricated and their performances were tested. Secondly, measurements of dissolved oxygen in two representative plant growth systems were made, which had not been performed previously due to lack of proper sensing technology. The responses of the oxygen microsensor array on a flexible polymer substrate properly reflected the oxygen contents on the surface of a porous tube nutrient delivery system and within a particulate substrate system. Additionally, we demonstrated the feasibility of using a 4-point thin film microprobe for water contents measurements for both plant growth systems. mechanical flexibility, and self-diagnosis. The proposed technology is anticipated to provide a reliable sensor feedback plant growth nutrient delivery systems in both terrestrial environment and the microgravity environment during long term space missions. The unique features of the sensor include small size and volume, multiple-point sensing,

A Review of Single Source Precursors for the Deposition of Ternary Chalcopyrite Materials

NASA Technical Reports Server (NTRS)

Banger, K. K.; Cowen, J.; Harris, J.; McClarnon, R.; Hehemann, D. G.; Duraj, S. A.; Scheiman, D.; Hepp, A. F.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified durable substrates (i.e. Kapton) provides an attractive solution to fabricating solar arrays with high specific power, (W/kg). The syntheses and thermal modulation of ternary single source precursors, based on the [{LR}2Cu(SR')2In(SR')2] architecture in good yields are described. Thermogravimetric analyses (TGA) and Low temperature Differential Scanning Caloriometry, (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five-donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursors. TGA-Evolved Gas Analysis, confirms that single precursors decompose by the initial extrusion of the sulphide moiety, followed by the loss of the neutral donor group, (L) to release the ternary chalcopyrite matrix. X-ray diffraction studies, EDS and SEM on the non-volatile pyrolized material demonstrate that these derivatives afford single-phase CuInS2/CuInSe2 materials at low temperature. Thin-film fabrication studies demonstrate that these single source precursors can be used in a spray chemical vapor deposition process, for depositing CuInS2 onto flexible polymer substrates at temperatures less than 400 C.

Mechanical Flexibility of Zinc Oxide Thin-Film Transistors Prepared by Transfer Printing Method

NASA Astrophysics Data System (ADS)

Eun, K. T.; Hwang, W. J.; Sharma, B. K.; Ahn, J. H.; Lee, Y. K.; Choa, S. H.

In the present study, we demonstrate the performance of Zinc oxide thin film transistors (ZnO TFTs) array subjected to the strain under high bending test and the reliability of TFTs was confirmed for the bending fatigue test of 2000 cycles. Initially, ZnO TFTs were fabricated on Si substrate and subsequently transferred on flexible PET substrate using transfer printing process. It was observed that when the bending radius reached ≥ 11 mm then cracks start to initiate first at SiO2 bridges, acting as interconnecting layers among individual TFT. Whatever the strain is applied to the devices, it is almost equivalently adopted by the SiO2 bridges, as they are relatively weak compared to rest of the part. The initial cracking of destructed SiO2 bridge leads to the secondary cracks to the ITO electrodes upon further increment of bending radius. Numerical simulation suggested that the strain of SiO2 layer reached to fracture level of 0.55% which was concentrated at the edge of SiO2 bridge layer. It also suggests that the round shape of SiO2 bridge can be more fruitful to compensate the stress concentration and to prevent failure of device.

Electrophoretic deposited TiO 2 pigment-based back reflectors for thin film solar cells

DOE PAGES

Bills, Braden; Morris, Nathan; Dubey, Mukul; ...

2015-01-16

Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO 2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectricmore » breakdown approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

New Thin-Film Solar Cells Compared to Normal Solar Cells

NASA Image and Video Library

1966-06-21

Adolph Spakowski, head of the Photovoltaic Fundamentals Section at the National Aeronautics and Space Administration (NASA) Lewis Research Center, illustrated the difference between conventional silicon solar cells (rear panel) and the new thin-film cells. The larger, flexible thin-film cells in the foreground were evaluated by Lewis energy conversion specialists for possible future space use. The conventional solar cells used on most spacecraft at the time were both delicate and heavy. For example, the Mariner IV spacecraft required 28,000 these solar cells for its flyby of Mars in 1964. NASA Lewis began investigating cadmium sulfide thin-film solar cells in 1961. The thin-film cells were made by heating semiconductor material until it evaporated. The vapor was then condensed onto an electricity-producing film only one-thousandth of an inch thick. The physical flexibility of the new thin-film cells allowed them to be furled, or rolled up, during launch. Spakowski led an 18-month test program at Lewis to investigate the application of cadmium sulfide semiconductors on a light metallized substrate. The new thin-film solar cells were tested in a space simulation chamber at a simulated altitude of 200 miles. Sunlight was recreated by a 5000-watt xenon light. Two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

PubMed

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes

PubMed Central

Halpern, Jeffrey M.; Martin, Heidi B.

2014-01-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes. PMID:25404788

Improvement of organic solar cells by flexible substrate and ITO surface treatments

NASA Astrophysics Data System (ADS)

Cheng, Yuang-Tung; Ho, Jyh-Jier; Wang, Chien-Kun; Lee, William; Lu, Chih-Chiang; Yau, Bao-Shun; Nain, Jhen-Liang; Chang, Shun-Hsyung; Chang, Chiu-Cheng; Wang, Kang L.

2010-10-01

In this paper, surface treatments on polyethylene terephthalate with polymeric hard coating (PET-HC) substrates are described. The effect of the contact angle on the treatment is first investigated. It has been observed that detergent is quite effective in removing organic contamination on the flexible PET-HC substrates. Next, using a DC-reactive magnetron sputter, indium tin oxide (ITO) thin films of 90 nm are grown on a substrate treated by detergent. Then, various ITO surface treatments are made for improving the performance of the finally developed organic solar cells with structure Al/P3HT:PCBM/PEDOT:PSS/ITO/PET. It is found that the parameters of the ITO including resistivity, carrier concentration, transmittance, surface morphology, and work function depended on the surface treatments and significantly influence the solar cell performance. With the optimal conditions for detergent treatment on flexible PET substrates, the ITO film with a resistivity of 5.6 × 10 -4 Ω cm and average optical transmittance of 84.1% in the visible region are obtained. The optimal ITO surface treated by detergent for 5 min and then by UV ozone for 20 min exhibits the best WF value of 5.22 eV. This improves about 8.30% in the WF compared with that of the untreated ITO film. In the case of optimal treatment with the organic photovoltaic device, meanwhile, 36.6% enhancement in short circuit current density ( Jsc) and 92.7% enhancement in conversion efficiency ( η) over the untreated solar cell are obtained.

Mechanics of hard films on soft substrates

NASA Astrophysics Data System (ADS)

Lu, Nanshu

2009-12-01

Flexible electronics have been developed for various applications, including paper-like electronic readers, rollable solar cells, electronic skins etc., with the merits of light weight, low cost, large area, and ruggedness. The systems may be subject to one-time or repeated large deformation during manufacturing and application. Although organic materials can be highly deformable, currently they are not able to fulfill every electronic function. Therefore flexible electronic devices are usually made as organic/inorganic hybrids, with diverse materials, complex architecture, and micro features. While the polymer substrates can recover from large deformations, thin films of electronic materials such as metals, silicon, oxides, and nitrides fracture at small strains, usually less than a few percent. Mechanics of hard films on soft substrates hence holds the key to build high-performance and highly reliable flex circuits. This thesis investigates the deformability and failure mechanisms of thin films of metallic and ceramic materials supported by soft polymeric substrates through combined experimental, theoretical, and numerical methods. When subject to tension, micron-thick metal films with stable microstructure and strong interfacial adhesion to the substrate can be stretched beyond 50% without forming cracks. They eventually rupture by a ductile transgranular fracture which involves simultaneous necking and debonding. When metal films become nanometer-thick, intergranular fracture dominates the failure mode at elongations of only a few percent. Unannealed films show unstable microstructure at room temperature when subject to mechanical loading. In this case, films also rupture at small strains but by three concurrent mechanisms: deformation-induced grain growth, strain localization at large grains, and simultaneous debonding. In contrast to metal films, ceramic films rupture by brittle mechanisms. The only way to prevent rupture of ceramic films is to reduce the strain they are subject to. Instead of using blanket films that fail at strains less than i%, we have patterned ceramic films into a lattice of periodic, isolated islands. Failure modes such as channel cracking, debonding, and wrinkling have been identified. Island behaviors are controlled by factors such as island size, thickness, and elastic mismatch with the substrate. A very soft interlayer between the islands and the underlying polyimide substrate reduces strains in the islands by orders of magnitude. Using this approach, substrates with arrays of 200 x 200 mum2 large SiNx islands were stretched beyond 20% without cracking or debonding the islands. In summary, highly stretchable thin metal films and ceramic island arrays supported by polymer substrates have been achieved, along with mechanistic understandings of their deformation and failure mechanisms.

Temperature distribution around thin electroconductive layers created on composite textile substrates

NASA Astrophysics Data System (ADS)

Korzeniewska, Ewa; Szczesny, Artur; Krawczyk, Andrzej; Murawski, Piotr; Mróz, Józef; Seme, Sebastian

2018-03-01

In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software's usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ok, Kyung-Chul; Park, Jin-Seong, E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and themore » devices remained normally functional.« less

Free-Standing and Transparent Graphene Membrane of Polyhedron Box-Shaped Basic Building Units Directly Grown Using a NaCl Template for Flexible Transparent and Stretchable Solid-State Supercapacitors.

PubMed

Li, Na; Yang, Gongzheng; Sun, Yong; Song, Huawei; Cui, Hao; Yang, Guowei; Wang, Chengxin

2015-05-13

Transparency has never been integrated into freestanding flexible graphene paper (FF-GP), although FF-GP has been discussed extensively, because a thin transparent graphene sheet will fracture easily when the template or substrate is removed using traditional methods. Here, transparent FF-GP (FFT-GP) was developed using NaCl as the template and was applied in transparent and stretchable supercapacitors. The capacitance was improved by nearly 1000-fold compared with that of the laminated or wrinkled chemical vapor deposition graphene-film-based supercapacitors.

Selectively Plasmon-Enhanced Second-Harmonic Generation from Monolayer Tungsten Diselenide on Flexible Substrates.

PubMed

Wang, Zhuo; Dong, Zhaogang; Zhu, Hai; Jin, Lei; Chiu, Ming-Hui; Li, Lain-Jong; Xu, Qing-Hua; Eda, Goki; Maier, Stefan A; Wee, Andrew T S; Qiu, Cheng-Wei; Yang, Joel K W

2018-02-27

Monolayer two-dimensional transition-metal dichalcogenides (2D TMDCs) exhibit promising characteristics in miniaturized nonlinear optical frequency converters, due to their inversion asymmetry and large second-order nonlinear susceptibility. However, these materials usually have very short light interaction lengths with the pump laser because they are atomically thin, such that second-harmonic generation (SHG) is generally inefficient. In this paper, we fabricate a judiciously structured 150 nm-thick planar surface consisting of monolayer tungsten diselenide and sub-20 nm-wide gold trenches on flexible substrates, reporting ∼7000-fold SHG enhancement without peak broadening or background in the spectra as compared to WSe 2 on as-grown sapphire substrates. Our proof-of-concept experiment yields effective second-order nonlinear susceptibility of 2.1 × 10 4 pm/V. Three orders of magnitude enhancement is maintained with pump wavelength ranging from 800 to 900 nm, breaking the limitation of narrow pump wavelength range for cavity-enhanced SHG. In addition, SHG amplitude can be dynamically controlled via selective excitation of the lateral gap plasmon by rotating the laser polarization. Such a fully open, flat, and ultrathin profile enables a great variety of functional samples with high SHG from one patterned silicon substrate, favoring scalable production of nonlinear converters. The surface accessibility also enables integration with other optical components for information processing in an ultrathin and flexible form.

Conjunction of Conducting Polymer Nanostructures with Macroporous Structured Graphene Thin Films for High-Performance Flexible Supercapacitors.

PubMed

Memon, Mushtaque A; Bai, Wei; Sun, Jinhua; Imran, Muhammad; Phulpoto, Shah Nawaz; Yan, Shouke; Huang, Yong; Geng, Jianxin

2016-05-11

Fabrication of hybridized structures is an effective strategy to promote the performances of graphene-based composites for energy storage/conversion applications. In this work, macroporous structured graphene thin films (MGTFs) are fabricated on various substrates including flexible graphene papers (GPs) through an ice-crystal-induced phase separation process. The MGTFs prepared on GPs (MGTF@GPs) are recognized with remarkable features such as interconnected macroporous configuration, sufficient exfoliation of the conductive RGO sheets, and good mechanical flexibility. As such, the flexible MGTF@GPs are demonstrated as a versatile conductive platform for depositing conducting polymers (CPs), e.g., polyaniline (PAn), polypyrrole, and polythiophene, through in situ electropolymerization. The contents of the CPs in the composite films are readily controlled by varying the electropolymerization time. Notably, electrodeposition of PAn leads to the formation of nanostructures of PAn nanofibers on the walls of the macroporous structured RGO framework (PAn@MGTF@GPs): thereafter, the PAn@MGTF@GPs display a unique structural feature that combine the nanostructures of PAn nanofibers and the macroporous structures of RGO sheets. Being used as binder-free electrodes for flexible supercapacitors, the PAn@MGTF@GPs exhibit excellent electrochemical performance, in particular a high areal specific capacity (538 mF cm(-2)), high cycling stability, and remarkable capacitive stability to deformation, due to the unique electrode structures.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

PubMed

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

A flexible Li-ion battery with design towards electrodes electrical insulation

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Ribeiro, J. F.; Sousa, R.; Correia, J. H.; Goncalves, L. M.

2016-08-01

The application of micro electromechanical systems (MEMS) technology in several consumer electronics leads to the development of micro/nano power sources with high power and MEMS integration possibility. This work presents the fabrication of a flexible solid-state Li-ion battery (LIB) (~2.1 μm thick) with a design towards electrodes electrical insulation, using conventional, low cost and compatible MEMS fabrication processes. Kapton® substrate provides flexibility to the battery. E-beam deposited 300 nm thick Ge anode was coupled with LiCoO2/LiPON (cathode/solid-state electrolyte) in a battery system. LiCoO2 and LiPON films were deposited by RF-sputtering with a power source of 120 W and 100 W, respectively. LiCoO2 film was annealed at 400 °C after deposition. The new design includes Si3N4 and LiPO thin-films, providing electrode electrical insulation and a battery chemical stability safeguard, respectively. Microstructure and battery performance were investigated by scanning electron microscopy, electric resistivity and electrochemical measurements (open circuit potential, charge/discharge cycles and electrochemical impedance spectroscopy). A rechargeable thin-film and lightweight flexible LIB using MEMS processing compatible materials and techniques is reported.

Transparent, flexible, and stretchable WS2 based humidity sensors for electronic skin.

PubMed

Guo, Huayang; Lan, Changyong; Zhou, Zhifei; Sun, Peihua; Wei, Dapeng; Li, Chun

2017-05-18

Skin-mountable chemical sensors using flexible chemically sensitive nanomaterials are of great interest for electronic skin (e-skin) application. To build these sensors, the emerging atomically thin two-dimensional (2D) layered semiconductors could be a good material candidate. Herein, we show that a large-area WS 2 film synthesized by sulfurization of a tungsten film exhibits high humidity sensing performance both in natural flat and high mechanical flexible states (bending curvature down to 5 mm). The conductivity of as-synthesized WS 2 increases sensitively over a wide relative humidity range (up to 90%) with fast response and recovery times in a few seconds. By using graphene as electrodes and thin polydimethylsiloxane (PDMS) as substrate, a transparent, flexible, and stretchable humidity sensor was fabricated. This senor can be well laminated onto skin and shows stable water moisture sensing behaviors in the undeformed relaxed state as well as under compressive and tensile loadings. Furthermore, its high sensing performance enables real-time monitoring of human breath, indicating a potential mask-free breath monitoring for healthcare application. We believe that such a skin-activity compatible WS 2 humidity sensor may shed light on developing low power consumption wearable chemical sensors based on 2D semiconductors.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

PubMed

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Atmospheric Pressure Plasma Jet as a Dry Alternative to Inkjet Printing in Flexible Electronics

NASA Technical Reports Server (NTRS)

Gandhiraman, Ram Prasad; Lopez, Arlene; Koehne, Jessica; Meyyappan, M.

2016-01-01

We have developed an atmospheric pressure plasma jet printing system that works at room temperature to 50 deg C unlike conventional aerosol assisted techniques which require a high temperature sintering step to obtain desired thin films. Multiple jets can be configured to increase throughput or to deposit multiple materials, and the jet(s) can be moved across large areas using a x-y stage. The plasma jet has been used to deposit carbon nanotubes, graphene, silver nanowires, copper nanoparticles and other materials on substrates such as paper, cotton, plastic and thin metal foils.

High-mobility low-temperature ZnO transistors with low-voltage operation

NASA Astrophysics Data System (ADS)

Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon

2010-05-01

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

A novel fabrication method for surface integration of metal structures into polymers (SIMSIP)

NASA Astrophysics Data System (ADS)

Carrion-Gonzalez, Hector

Recently developed flexible electronics applications require that the thin metal films embedded on elastomer substrates also be flexible. These electronic systems are radically different in terms of performance and functionality than conventional silicon-based devices. A key question is whether the metal deposited on flexible films can survive large strains without rupture. Cumbersome macro-fabrication methods have been developed for functional and bendable electronics (e.g., interconnects) encapsulated between layers of polymer films. However, future electronic applications may require electronic flexible devices to be in intimate contact with curved surfaces (e.g., retinal implants) and to be robust enough to withstand large and repeated mechanical deformations. In this research, a novel technique for surface integration of metal structures into polymers (SIMSIP) was developed. Surface embedding, as opposed to placing metal on polymers, provides better adherence while leaving the surface accessible for contacts. This was accomplished by first fabricating the micro-scale metal patterns on a quartz or Teflon mother substrate, and then embedding them to a flexible polyimide thin film. The technique was successfully used to embed micro-metal structures of gold (Au), silver (Ag), and copper (Cu) into polyimide films without affecting the functional properties of the either the metals or the polymers. Experimental results confirm the successful surface-embedding of metal structures as narrow as 0.6 microm wide for different geometries commonly used in circuit design. Although similar approaches exist in literature, the proposed methodology provides a simpler and more reliable way of producing flexible circuits/electronics that is also suitable for high volume manufacturing. In order to demonstrate the flexibility of metal interconnects fabricated using the SIMSIP technique, multiple Au electrodes (5 microm and 2.5 microm wide) were tested using the X-theta bending methodology. The X-theta bending test captures data on the electrical resistivity of micro Au electrodes fabricated using the proposed SIMSIP technique by bending them at different angles between 0o and 180o up to 50 times. The data shows that the electrical resistivity of the Au electrodes remains constant (<1% variation) despite the interconnects being repeatedly subjected to extreme tensile and compressive forces during the X-theta bending test. These results are significant from the perspective of flexible electronics and biotechnology applications since the fabricated thin films exhibit significant electrical stability, reliability and wear resistance. These surface-embedded, flexible, and mechanically stable metal interconnects will enable the further development of new electronic products with applications in biotechnology (e.g., e-skin), space exploration (e.g., satellites), and microelectronics (e.g., flat panel displays). The SIMSIP technique is also a suitable process for the nanofabrication of flexible electronic devices in applications that require intimate contact with bendable curved surfaces (e.g., retinal implants).

Dry-spray deposition of TiO2 for a flexible dye-sensitized solar cell (DSSC) using a nanoparticle deposition system (NPDS).

PubMed

Kim, Min-Saeng; Chun, Doo-Man; Choi, Jung-Oh; Lee, Jong-Cheon; Kim, Yang Hee; Kim, Kwang-Su; Lee, Caroline Sunyong; Ahn, Sung-Hoon

2012-04-01

TiO2 powders were deposited on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates for application to the photoelectrode of a dye-sensitized solar cell (DSSC). In the conventional DSSC manufacturing process, a semiconductor oxide such as TiO2 powder requires a sintering process at higher temperature than the glass transition temperature (T(g)) of polymers, and thus utilization of flexible polymer substrates in DSSC research has been constrained. To overcome this restriction related to sintering, we used a nanoparticle deposition system (NPDS) that could produce a thin coating layer through a dry-spray method under atmospheric pressure at room temperature. The powder was sprayed through a slit-type nozzle having a 0.4 x 10 mm2 rectangular outlet. In order to determine the deposited TiO2 thickness, five kinds of TiO2 layered specimens were prepared, where the specimens have single and double layer structures. Deposited powders on the ITO coated PET substrates were observed using FE-SEM and a scan profiler The thicker TiO2 photoelectrode with a DSSC having a double layer structure showed higher energy efficiency than the single layer case. The highest fabricated flexible DSSC displayed a short circuit current density J(sc) = 1.99 mA cm(-2), open circuit voltage V(oc) = 0.71 V, and energy efficiency eta = 0.94%. These results demonstrate the possibility of utilizing the dry-spray method to fabricate a TiO2 layer on flexible polymer substrates at room temperature under atmospheric pressure.

Metal-assisted exfoliation (MAE): green, roll-to-roll compatible method for transferring graphene to flexible substrates

NASA Astrophysics Data System (ADS)

Zaretski, Aliaksandr V.; Moetazedi, Herad; Kong, Casey; Sawyer, Eric J.; Savagatrup, Suchol; Valle, Eduardo; O'Connor, Timothy F.; Printz, Adam D.; Lipomi, Darren J.

2015-01-01

Graphene is expected to play a significant role in future technologies that span a range from consumer electronics, to devices for the conversion and storage of energy, to conformable biomedical devices for healthcare. To realize these applications, however, a low-cost method of synthesizing large areas of high-quality graphene is required. Currently, the only method to generate large-area single-layer graphene that is compatible with roll-to-roll manufacturing destroys approximately 300 kg of copper foil (thickness = 25 μm) for every 1 g of graphene produced. This paper describes a new environmentally benign and scalable process of transferring graphene to flexible substrates. The process is based on the preferential adhesion of certain thin metallic films to graphene; separation of the graphene from the catalytic copper foil is followed by lamination to a flexible target substrate in a process that is compatible with roll-to-roll manufacturing. The copper substrate is indefinitely reusable and the method is substantially greener than the current process that uses relatively large amounts of corrosive etchants to remove the copper. The sheet resistance of the graphene produced by this new process is unoptimized but should be comparable in principle to that produced by the standard method, given the defects observable by Raman spectroscopy and the presence of process-induced cracks. With further improvements, this green, inexpensive synthesis of single-layer graphene could enable applications in flexible, stretchable, and disposable electronics, low-profile and lightweight barrier materials, and in large-area displays and photovoltaic modules.

Development of robust flexible OLED encapsulations using simulated estimations and experimental validations

NASA Astrophysics Data System (ADS)

Lee, Chang-Chun; Shih, Yan-Shin; Wu, Chih-Sheng; Tsai, Chia-Hao; Yeh, Shu-Tang; Peng, Yi-Hao; Chen, Kuang-Jung

2012-07-01

This work analyses the overall stress/strain characteristic of flexible encapsulations with organic light-emitting diode (OLED) devices. A robust methodology composed of a mechanical model of multi-thin film under bending loads and related stress simulations based on nonlinear finite element analysis (FEA) is proposed, and validated to be more reliable compared with related experimental data. With various geometrical combinations of cover plate, stacked thin films and plastic substrate, the position of the neutral axis (NA) plate, which is regarded as a key design parameter to minimize stress impact for the concerned OLED devices, is acquired using the present methodology. The results point out that both the thickness and mechanical properties of the cover plate help in determining the NA location. In addition, several concave and convex radii are applied to examine the reliable mechanical tolerance and to provide an insight into the estimated reliability of foldable OLED encapsulations.

Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

NASA Astrophysics Data System (ADS)

Tseng, Kun-San; Lo, Yu-Lung

2013-11-01

The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target-substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target-substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target-substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target-substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target-substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.

PubMed

Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

2015-12-01

Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

NASA Astrophysics Data System (ADS)

Troughton, J. G.; Downs, P.; Price, R.; Atkinson, D.

2017-01-01

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Bup Ju; Hudaya, Chairul; Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791

2016-05-15

The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, includingmore » a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.« less

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrappedmore » around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.« less

Interfacial characterization of flexible hybrid electronics

NASA Astrophysics Data System (ADS)

Najafian, Sara; Amirkhizi, Alireza V.; Stapleton, Scott

2018-03-01

Flexible Hybrid Electronics (FHEs) are the new generation of electronics combining flexible plastic film substrates with electronic devices. Besides the electrical features, design improvements of FHEs depend on the prediction of their mechanical and failure behavior. Debonding of electronic components from the flexible substrate is one of the most common and critical failures of these devices, therefore, the experimental determination of material and interface properties is of great importance in the prediction of failure mechanisms. Traditional interface characterization involves isolated shear and normal mode tests such as the double cantilever beam (DCB) and end notch flexure (ENF) tests. However, due to the thin, flexible nature of the materials and manufacturing restrictions, tests mirroring traditional interface characterization experiments may not always be possible. The ideal goal of this research is to design experiments such that each mode of fracture is isolated. However, due to the complex nonlinear nature of the response and small geometries of FHEs, design of the proper tests to characterize the interface properties can be significantly time and cost consuming. Hence numerical modeling has been implemented to design these novel characterization experiments. This research involves loading case and specimen geometry parametric studies using numerical modeling to design future experiments where either shear or normal fracture modes are dominant. These virtual experiments will provide a foundation for designing similar tests for many different types of flexible electronics and predicting the failure mechanism independent of the specific FHE materials.

Preparation of highly conductive, transparent, and flexible graphene/silver nanowires substrates using non-thermal laser photoreduction

NASA Astrophysics Data System (ADS)

Anis, Badawi; Mostafa, A. M.; El Sayed, Z. A.; Khalil, A. S. G.; Abouelsayed, A.

2018-07-01

We present the preparation of highly conducting, transparent, and flexible reduced graphene oxide/silver nanowires (rGO/SNWs) substrates using non-thermal laser photoreduction method. High quality monolayers graphene oxide (GO) solution has been prepared by the chemical oxidation of thermally expanded large area natural graphite. Silver nanowires was prepared by using the typical polyol method. Uniform hybrid GO/silver nanowires (GO/SNWs) was prepared by growing the nanowires from silver nuclei in the presence of GO. Uniform and high-quality rGO/SNWs thin films were prepared using a dip-coating technique and were reduced to highly electrically conductive graphene and transparent conductive films using non-thermal laser scribe method. The laser scribed rGO/SNWs hybrid film exhibited 80% transparency with 70 Ω □-1 after 20 min of dipping in GO/SNWs solution.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dewani, Aliya A., E-mail: a.ashraf@griffith.edu.au; O’Keefe, Steven G.; Thiel, David V.

A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substratemore » thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.« less

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

PubMed

Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

2008-07-24

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.

Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Zhu, Shuanglin

Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

DOE PAGES

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

2015-11-06

Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

Ultrasmooth, Polydopamine Modified Surfaces for Block Copolymer Nanopatterning on Inert and Flexible Substrates

NASA Astrophysics Data System (ADS)

Katsumata, Reika; Cho, Joon Hee; Zhou, Sunshine; Kim, Chae Bin; Dulaney, Austin; Janes, Dustin; Ellison, Christopher

Nature has engineered universal, catechol-containing adhesives that can be synthetically mimicked in the form of polydopamine (PDA). We exploited PDA to enable block copolymer (BCP) nanopatterning on a variety of soft material surfaces in a way that can potentially be applied to flexible electrical devices. Applying BCP nanopatterning to soft substrates is challenging because soft substrates are often chemically inert and possess incompatible low surface energies. In this study, we exploited PDA to enable the formation of BCP nanopatterns on a variety of surfaces such as Teflon, poly(ethylene terephthalate) (PET), and Kapton. While previous studies produced a PDA coating layer too rough for BCP nanopatterning, we succeeded in fabricating conformal and ultra-smooth surfaces of PDA by engineering the PDA coating process and post-sonication procedure. This chemically functionalized, biomimetic thin film (3 nm thick) served as a reactive platform for subsequently grafting a surface treatment to perpendicularly orient a lamellae-forming BCP layer. Furthermore, we demonstrated that a perfectly nanopatterned PDA-PET substrate can be bent without distorting or damaging the nanopattern in conditions that far exceeds typical bending curvatures in roll-to-roll manufacturing.

Heteroepitaxial Cu2O thin film solar cell on metallic substrates

PubMed Central

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

2015-01-01

Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

Near-perfect broadband absorption from hyperbolic metamaterial nanoparticles

NASA Astrophysics Data System (ADS)

Riley, Conor T.; Smalley, Joseph S. T.; Brodie, Jeffrey R. J.; Fainman, Yeshaiahu; Sirbuly, Donald J.; Liu, Zhaowei

2017-02-01

Broadband absorbers are essential components of many light detection, energy harvesting, and camouflage schemes. Current designs are either bulky or use planar films that cause problems in cracking and delamination during flexing or heating. In addition, transferring planar materials to flexible, thin, or low-cost substrates poses a significant challenge. On the other hand, particle-based materials are highly flexible and can be transferred and assembled onto a more desirable substrate but have not shown high performance as an absorber in a standalone system. Here, we introduce a class of particle absorbers called transferable hyperbolic metamaterial particles (THMMP) that display selective, omnidirectional, tunable, broadband absorption when closely packed. This is demonstrated with vertically aligned hyperbolic nanotube (HNT) arrays composed of alternating layers of aluminum-doped zinc oxide and zinc oxide. The broadband absorption measures >87% from 1,200 nm to over 2,200 nm with a maximum absorption of 98.1% at 1,550 nm and remains large for high angles. Furthermore, we show the advantages of particle-based absorbers by transferring the HNTs to a polymer substrate that shows excellent mechanical flexibility and visible transparency while maintaining near-perfect absorption in the telecommunications region. In addition, other material systems and geometries are proposed for a wider range of applications.

Metallization and Biopatterning on Ultra-Flexible Substrates via Dextran Sacrificial Layers

PubMed Central

Tseng, Peter; Pushkarsky, Ivan; Di Carlo, Dino

2014-01-01

Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS) layers (elastic moduli down to 3 kPa) utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself) were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios) curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials. PMID:25153326

Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

NASA Astrophysics Data System (ADS)

Elsobky, Mourad; Mahsereci, Yigit; Keck, Jürgen; Richter, Harald; Burghartz, Joachim N.

2017-09-01

Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI) substrate to form a Hybrid System-in-Foil (HySiF), which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing) of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA) in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC). The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC), a differential difference amplifier (DDA), and a 10-bit successive approximation register (SAR) ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Casimir quantum levitation tuned by means of material properties and geometries

NASA Astrophysics Data System (ADS)

Dou, Maofeng; Lou, Fei; Boström, Mathias; Brevik, Iver; Persson, Clas

2014-05-01

The Casimir force between two surfaces is attractive in most cases. Although stable suspension of nano-objects has been achieved, the sophisticated geometries make them difficult to be merged with well-established thin film processes. We find that by introducing thin film surface coating on porous substrates, a repulsive to attractive force transition is achieved when the separations are increased in planar geometries, resulting in a stable suspension of two surfaces near the force transition separation. Both the magnitude of the force and the transition distance can be flexibly tailored though modifying the properties of the considered materials, that is, thin film thickness, doping concentration, and porosity. This stable suspension can be used to design new nanodevices with ultralow friction. Moreover, it might be convenient to merge this thin film coating approach with micro- and nanofabrication processes in the future.

Gauge Factor and Stretchability of Silicon-on-Polymer Strain Gauges

PubMed Central

Yang, Shixuan; Lu, Nanshu

2013-01-01

Strain gauges are widely applied to measure mechanical deformation of structures and specimens. While metallic foil gauges usually have a gauge factor slightly over 2, single crystalline silicon demonstrates intrinsic gauge factors as high as 200. Although silicon is an intrinsically stiff and brittle material, flexible and even stretchable strain gauges have been achieved by integrating thin silicon strips on soft and deformable polymer substrates. To achieve a fundamental understanding of the large variance in gauge factor and stretchability of reported flexible/stretchable silicon-on-polymer strain gauges, finite element and analytically models are established to reveal the effects of the length of the silicon strip, and the thickness and modulus of the polymer substrate. Analytical results for two limiting cases, i.e., infinitely thick substrate and infinitely long strip, have found good agreement with FEM results. We have discovered that strains in silicon resistor can vary by orders of magnitude with different substrate materials whereas strip length or substrate thickness only affects the strain level mildly. While the average strain in silicon reflects the gauge factor, the maximum strain in silicon governs the stretchability of the system. The tradeoff between gauge factor and stretchability of silicon-on-polymer strain gauges has been proposed and discussed. PMID:23881128

Thermoplastic tape compaction device

DOEpatents

Campbell, Vincent W.

1994-01-01

A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

Study of sputtered ZnO modified by Direct Laser Interference Patterning: Structural characterization and temperature simulation

NASA Astrophysics Data System (ADS)

Parellada-Monreal, L.; Castro-Hurtado, I.; Martínez-Calderón, M.; Rodriguez, A.; Olaizola, S. M.; Gamarra, D.; Lozano, J.; Mandayo, G. G.

2018-05-01

ZnO thin film sputtered on alumina substrate is processed by Direct Laser Interference Patterning (DLIP). The heat transfer equation has been simulated for interference patterns with a period of 730 nm and two different fluences (85 mJ/cm2 and 165 mJ/cm2). A thermal threshold of 900 K, where crystal modification occurs has been calculated, indicating a lateral and depth processing around 173 nm and 140 nm, respectively. The experimentally reproduced samples have been analyzed from the structural and composition point of view and compared to conventional thermal treatments at three different temperatures (600 °C, 700 °C and 800 °C). Promising properties have been observed for the laser treated samples, such as low influence on the thin film/substrate interface, an improvement of the crystallographic structure, as well as a decrease of the oxygen content from O/Zn = 2.10 to 1.38 for the highest fluence, getting closer to the stoichiometry. The DLIP characteristics could be suitable for the replacement of annealing process in the case of substrates that cannot achieve high temperatures as most of flexible substrates.

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

PubMed Central

Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

2017-01-01

The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices. PMID:28393845

Flexible and disposable plasmonic refractive index sensor using nanoimprint lithography

NASA Astrophysics Data System (ADS)

Mohapatra, Saswat; Moirangthem, Rakesh S.

2018-03-01

Nanostructure based plasmonic sensors are highly demanding in various areas due to their label-free and real-time detection capability. In this work, we developed an inexpensive flexible plasmonic sensor using optical disc nanograting via soft UV-nanoimprint lithography (UV-NIL). The polydimethylsiloxane (PDMS) stamp was used to transfer the nanograting structure from digital versatile discs (DVDs) to flexible and transparent polyethylene terephthalate (PET) substrate. Further, the plasmonic sensing substrate was obtained after coating a gold thin film on the top of the imprinted sample. The surface plasmon resonance (SPR) modes excited on gold coated nanograting structure appeared as a dip in the reflectance spectra measured at normal incident of white light in ambient air medium. Electromagnetic simulation based on finite element method (FEM) was used to understand and analyze the excited SPR modes and it is a very close agreement with the experimental results. The bulk refractive index (RI) sensing was performed by the sensor chip using water-glycerol mixture with different concentrations. Experimentally, the bulk RI sensitivity was found to be 797+/-17 nm/RIU.

Flexible low-power RF nanoelectronics in the GHz regime using CVD MoS2

NASA Astrophysics Data System (ADS)

Yogeesh, Maruthi

Two-dimensional (2D) materials have attracted substantial interest for flexible nanoelectronics due to the overall device mechanical flexibility and thickness scalability for high mechanical performance and low operating power. In this work, we demonstrate the first MoS2 RF transistors on flexible substrates based on CVD-grown monolayers, featuring record GHz cutoff frequency (5.6 GHz) and saturation velocity (~1.8×106 cm/s), which is significantly superior to contemporary organic and metal oxide thin-film transistors. Furthermore, multicycle three-point bending results demonstrated the electrical robustness of our flexible MoS2 transistors after 10,000 cycles of mechanical bending. Additionally, basic RF communication circuit blocks such as amplifier, mixer and wireless AM receiver have been demonstrated. These collective results indicate that MoS2 is an ideal advanced semiconducting material for low-power, RF devices for large-area flexible nanoelectronics and smart nanosystems owing to its unique combination of large bandgap, high saturation velocity and high mechanical strength.

Conceptual approach study of a 200 watt per kilogram solar array

NASA Technical Reports Server (NTRS)

Stanhouse, R. W.; Fox, D.; Wilson, W.

1976-01-01

Solar array candidate configurations (flexible rollup, flexible flat-pact, semi-rigid panel, semi-rigid flat-pack) were analyzed with particular attention to the specific power (W/kg) requirement. Two of these configurations (flexible rollup and flexible flat-pack) are capable of delivering specific powers equal to or exceeding the baseline requirement of 200 W/kg. Only the flexible rollup is capable of in-flight retraction and subsequent redeployment. The wrap-around contact photovoltaic cell configuration has been chosen over the conventional cell. The demand for ultra high specific power forces the selection of ultra-thin cells and cover material. Based on density and mass range considerations, it was concluded that 13 micrometers of FEP Teflon is sufficient to protect the cell from a total proton fluency of 2(10 to the 12th power) particles/sq cm over a three-year interplanetary mission. The V-stiffened, lattice boom deployed, flexible substrate rollup array holds the greatest promise of meeting the baseline requirements set for this study.

Fabrication & characterization of thin film Perovskite solar cells under ambient conditions

NASA Astrophysics Data System (ADS)

Shah, Vivek T.

High efficiency solar cells based on inorganic materials such as silicon have been commercialized and used to harness energy from the sun and convert it into electrical energy. However, they are energy-intensive and rigid. Thin film solar cells based on inorganic-organic hybrid lead halide perovskite compounds have the potential to be a disruptive technology in the field of renewable energy sector of the economy. Perovskite solar cell (PSC) technology is a viable candidate for low-cost large scale production as it is solution processable at low temperature on a flexible substrate. However, for commercialization, PSCs need to compete with the cost and efficiency of crystalline silicon solar cells. High efficiency PSCs have been fabricated under highly controlled conditions in what is known as a glove-box, which adds to the cost of fabrication of PSCs. This additional cost can be significantly reduced by eliminating the use of glove-box for fabrication. Therefore, in this work, thin film PSCs were fabricated at ambient conditions on glass substrates. A power conversion efficiency of 5.6% was achieved with optimum fabrication control and minimal exposure to moisture.

Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

DTIC Science & Technology

2012-07-01

selected mass-altered planes is varied, we have constructed a simple one-dimensional lattice that approximates the solids simulated previously with...to Sn atoms added to a silicon lattice). Development of Solid State Supercapacitors Integrated with Solar cells for Solar Electricity Storage This... supercapacitor for solar electricity storage. These areas and the major tasks therein are: (i) Supercapacitor Electrodes: We have investigated an approach to

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells.

PubMed

Chirilă, Adrian; Reinhard, Patrick; Pianezzi, Fabian; Bloesch, Patrick; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Keller, Debora; Gretener, Christina; Hagendorfer, Harald; Jaeger, Dominik; Erni, Rolf; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2013-12-01

Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20%. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters. Ion exchange processes, well known in other research areas, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction.

High-Performance Ultrathin Organic-Inorganic Hybrid Silicon Solar Cells via Solution-Processed Interface Modification.

PubMed

Zhang, Jie; Zhang, Yinan; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan; Jia, Baohua

2017-07-05

Organic-inorganic hybrid solar cells based on n-type crystalline silicon and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) exhibited promising efficiency along with a low-cost fabrication process. In this work, ultrathin flexible silicon substrates, with a thickness as low as tens of micrometers, were employed to fabricate hybrid solar cells to reduce the use of silicon materials. To improve the light-trapping ability, nanostructures were built on the thin silicon substrates by a metal-assisted chemical etching method (MACE). However, nanostructured silicon resulted in a large amount of surface-defect states, causing detrimental charge recombination. Here, the surface was smoothed by solution-processed chemical treatment to reduce the surface/volume ratio of nanostructured silicon. Surface-charge recombination was dramatically suppressed after surface modification with a chemical, associated with improved minority charge-carrier lifetime. As a result, a power conversion efficiency of 9.1% was achieved in the flexible hybrid silicon solar cells, with a substrate thickness as low as ∼14 μm, indicating that interface engineering was essential to improve the hybrid junction quality and photovoltaic characteristics of the hybrid devices.

Fabrication of free-standing, electrochemically active, and biocompatible graphene oxide-polyaniline and graphene-polyaniline hybrid papers.

PubMed

Yan, Xingbin; Chen, Jiangtao; Yang, Jie; Xue, Qunji; Miele, Philippe

2010-09-01

In this work, we report a low-cost technique via simple rapid-mixture polymerization of aniline using graphene oxide (GO) and graphene papers as substrates, respectively, to fabricate free-standing, flexible GO-polyaniline (PANI) and graphene-PANI hybrid papers. The morphology and microstructure of the obtained papers were characterized by FESEM, FTIR, Raman, and XRD. As results, nanostructural PANI can be deposited on the surfaces of GO and graphene papers, forming thin, lightweight, and flexible paperlike hybrid papers. The hybrid papers display a remarkable combination of excellent electrochemical performances and biocompatibility, making the paperlike materials attractive for new kinds of applications in biosciences.

Thermal sensors utilizing thin layer technology applied to the analysis of aeronautical thermal exchanges

NASA Astrophysics Data System (ADS)

Godefroy, J. C.; Gageant, C.; Francois, D.

Thin film surface thermometers and thermal gradient fluxmeters developed by ONERA to monitor thermal exchanges in aircraft engines to predict the remaining service life of the components are described. The sensors, less than 80 microns thick, with flexible Kapton dielectric layers and metal substrates, are integrated into the shape of the surface being monitored. Features of Cu-n, Ni-, Au-, and Cr-based films, including mounting and circuitry methods that permit calibration and accurate signal analysis, are summarized. Results are discussed from sample applications of the devices on a symmetric NACA 65(1)-012 airfoil and on a turbine blade.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

PubMed

Ju, Sanghyun; Li, Jianfeng; Liu, Jun; Chen, Po-Chiang; Ha, Young-Geun; Ishikawa, Fumiaki; Chang, Hsiaokang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B; Marks, Tobin J

2008-04-01

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Effect of atmospheric-pressure plasma treatment on the adhesion properties of a thin adhesive layer in a selective transfer process

NASA Astrophysics Data System (ADS)

Yoon, Min-Ah; Kim, Chan; Hur, Min; Kang, Woo Seok; Kim, Jaegu; Kim, Jae-Hyun; Lee, Hak-Joo; Kim, Kwang-Seop

2018-01-01

The adhesion between a stamp and thin film devices is crucial for their transfer on a flexible substrate. In this paper, a thin adhesive silicone layer on the stamp was treated by atmospheric pressure plasma to locally control the adhesion strength for the selective transfer. The adhesion strength of the silicone layer was significantly reduced after the plasma treatment, while its surface energy was increased. To understand the inconsistency between the adhesion strength and surface energy changes, the surface properties of the silicone layer were characterized using nanoindentation and X-ray photoelectron spectroscopy. These techniques revealed that a thin, hard, silica-like layer had formed on the surface from plasma-enhanced oxidation. This layer played an important role in decreasing the contact area and increasing the interfacial slippage, resulting in decreased adhesion. As a practical application, the transfer process was demonstrated on GaN LEDs that had been previously delaminated by a laser lift-off (LLO) process. Although the LEDs were not transferred onto the treated adhesive layer due to the reduced adhesion, the untreated adhesive layer could readily pick up the LEDs. It is expected that this simple method of controlling the adhesion of a stamp with a thin adhesive layer would enable a continuous, selective and large-scale roll-to-roll selective transfer process and thereby advance the development of flexible, stretchable and wearable electronics.

Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

NASA Astrophysics Data System (ADS)

Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

2018-02-01

Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

NASA Astrophysics Data System (ADS)

Münzenrieder, Niko; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard

2014-12-01

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (LOV) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on LOV. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

NASA Astrophysics Data System (ADS)

Heidari, Hadi; Wacker, Nicoleta; Dahiya, Ravinder

2017-09-01

Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

The electrodeposition of multilayers on a polymeric substrate in flexible organic photovoltaic solar cells

NASA Astrophysics Data System (ADS)

Guedes, Andre F. S.; Guedes, Vilmar P.; Souza, Monica L.; Tartari, Simone; Cunha, Idaulo J.

2015-09-01

Flexible organic photovoltaic solar cells have drawn intense attention due to their advantages over competing solar cell technologies. The method utilized to deposit as well as to integrate solutions and processed materials, manufacturing organic solar cells by the Electrodeposition System, has been presented in this research. In addition, we have demonstrated a successful integration of a process for manufacturing the flexible organic solar cell prototype and we have discussed on the factors that make this process possible. The maximum process temperature was 120°C, which corresponds to the baking of the active polymeric layer. Moreover, the new process of the Electrodeposition of complementary active layer is based on the application of voltage versus time in order to obtain a homogeneous layer with thin film. This thin film was not only obtained by the electrodeposition of PANI-X1 on P3HT/PCBM Blend, but also prepared in perchloric acid solution. Furthermore, these flexible organic photovoltaic solar cells presented power conversion efficiency of 12% and the inclusion of the PANI-X1 layer reduced the effects of degradation on these organic photovoltaic panels induced by solar irradiation. Thus, in the Scanning Electron Microscopy (SEM), these studies have revealed that the surface of PANI-X1 layers is strongly conditioned by the dielectric surface morphology.

Organic electronics with polymer dielectrics on plastic substrates fabricated via transfer printing

NASA Astrophysics Data System (ADS)

Hines, Daniel R.

Printing methods are fast becoming important processing techniques for the fabrication of flexible electronics. Some goals for flexible electronics are to produce cheap, lightweight, disposable radio frequency identification (RFID) tags, very large flexible displays that can be produced in a roll-to-roll process and wearable electronics for both the clothing and medical industries. Such applications will require fabrication processes for the assembly of dissimilar materials onto a common substrate in ways that are compatible with organic and polymeric materials as well as traditional solid-state electronic materials. A transfer printing method has been developed with these goals and application in mind. This printing method relies primarily on differential adhesion where no chemical processing is performed on the device substrate. It is compatible with a wide variety of materials with each component printed in exactly the same way, thus avoiding any mixed processing steps on the device substrate. The adhesion requirements of one material printed onto a second are studied by measuring the surface energy of both materials and by surface treatments such as plasma exposure or the application of self-assembled monolayers (SAM). Transfer printing has been developed within the context of fabricating organic electronics onto plastic substrates because these materials introduce unique opportunities associated with processing conditions not typically required for traditional semiconducting materials. Compared to silicon, organic semiconductors are soft materials that require low temperature processing and are extremely sensitive to chemical processing and environmental contamination. The transfer printing process has been developed for the important and commonly used organic semiconducting materials, pentacene (Pn) and poly(3-hexylthiophene) (P3HT). A three-step printing process has been developed by which these materials are printed onto an electrode subassembly consisting of previously printed electrodes separated by a polymer dielectric layer all on a plastic substrate. These bottom contact, flexible organic thin-film transistors (OTFT) have been compared to unprinted (reference) devices consisting of top contact electrodes and a silicon dioxide dielectric layer on a silicon substrate. Printed Pn and P3HT TFTs have been shown to out-perform the reference devices. This enhancement has been attributed to an annealing under pressure of the organic semiconducting material.

A Route Towards Sustainability Through Engineered Polymeric Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reeja-Jayan, B; Kovacik, P; Yang, R

2014-05-30

Chemical vapor deposition (CVD) of polymer films represent the marriage of two of the most important technological innovations of the modern age. CVD as a mature technology for growing inorganic thin films is already a workhorse technology of the microfabrication industry and easily scalable from bench to plant. The low cost, mechanical flexibility, and varied functionality offered by polymer thin films make them attractive for both macro and micro scale applications. This review article focuses on two energy and resource efficient CVD polymerization methods, initiated Chemical Vapor Deposition (iCVD) and oxidative Chemical Vapor Deposition (oCVD). These solvent-free, substrate independent techniquesmore » engineer multi-scale, multi-functional and conformal polymer thin film surfaces and interfaces for applications that can address the main sustainability challenges faced by the world today.« less

Improvement of Permeation of Solvent-Free Multilayer Encapsulation of Thin Films on Poly(ethylene terephthalate)

NASA Astrophysics Data System (ADS)

Han, Jin-Woo; Kang, Hee-Jin; Kim, Jong-Yeon; Kim, Gwi-Yeol; Seo, Dae-Shik

2006-12-01

In this study, inorganic multilayer thin-film encapsulation is adopted for the first time to protect an organic layer from moisture and oxygen. Inorganic multilayer thin-film encapsulation is deposited onto poly(ethylene terephthalate) (PET) using an electron beam and sputtering. The SiON/SiO2 and parylene layer show the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from a level of 0.57 g m-2 day-1 (bare substrate) to 1× 10-5 g m-2 day-1 after the application of a SiON and SiO2 layer. These results indicate that PET/parylene/SiO2/SiON barrier coatings have high potential for flexible organic light-emitting diode (OLED) applications.

Scale-Up of the Electrodeposition of ZnO/Eosin Y Hybrid Thin Films for the Fabrication of Flexible Dye-Sensitized Solar Cell Modules.

PubMed

Bittner, Florian; Oekermann, Torsten; Wark, Michael

2018-02-02

The low-temperature fabrication of flexible ZnO photo-anodes for dye-sensitized solar cells (DSSCs) by templated electrochemical deposition of films was performed in an enlarged and technical simplified deposition setup to demonstrate the feasibility of the scale-up of the deposition process. After extraction of eosin Y (EY) from the initially deposited ZnO/EY hybrid films, mesoporous ZnO films with an area of about 40 cm² were reproducibly obtained on fluorine doped tin oxide (FTO)-glass as well as flexible indium tin oxide (ITO)-polyethylenterephthalate (PET) substrates. With a film thickness of up to 9 µm and a high specific surface area of up to about 77 m²·cm -3 the ZnO films on the flexible substrates show suitable properties for DSSCs. Operative flexible DSSC modules proved the suitability of the ZnO films for use as DSSC photo-anodes. Under a low light intensity of about 0.007 sun these modules achieved decent performance parameters with conversion efficiencies of up to 2.58%. With rising light intensity the performance parameters deteriorated, leading to conversion efficiencies below 1% at light intensities above 0.5 sun. The poor performance of the modules under high light intensities can be attributed to their high series resistances.

Scale-Up of the Electrodeposition of ZnO/Eosin Y Hybrid Thin Films for the Fabrication of Flexible Dye-Sensitized Solar Cell Modules

PubMed Central

Oekermann, Torsten

2018-01-01

The low-temperature fabrication of flexible ZnO photo-anodes for dye-sensitized solar cells (DSSCs) by templated electrochemical deposition of films was performed in an enlarged and technical simplified deposition setup to demonstrate the feasibility of the scale-up of the deposition process. After extraction of eosin Y (EY) from the initially deposited ZnO/EY hybrid films, mesoporous ZnO films with an area of about 40 cm2 were reproducibly obtained on fluorine doped tin oxide (FTO)-glass as well as flexible indium tin oxide (ITO)–polyethylenterephthalate (PET) substrates. With a film thickness of up to 9 µm and a high specific surface area of up to about 77 m2·cm−3 the ZnO films on the flexible substrates show suitable properties for DSSCs. Operative flexible DSSC modules proved the suitability of the ZnO films for use as DSSC photo-anodes. Under a low light intensity of about 0.007 sun these modules achieved decent performance parameters with conversion efficiencies of up to 2.58%. With rising light intensity the performance parameters deteriorated, leading to conversion efficiencies below 1% at light intensities above 0.5 sun. The poor performance of the modules under high light intensities can be attributed to their high series resistances. PMID:29393910

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition

DTIC Science & Technology

2014-04-17

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition(FA2386-11-1-114052) Yukiharu Uraoka, Nara Institute of Science and Technology Term...2011.5.1-2012.4.30 Purpose and Background: In recent years, the application of zinc oxide (ZnO) thin films as an active channel layer in TFTs has...or other flexible substrates. Higher field-effect mobility of ZnO TFTs than a-Si:H TFTs has been recently demonstrated. However, reliability for

Bio-Based Transparent Conductive Film Consisting of Polyethylene Furanoate and Silver Nanowires for Flexible Optoelectronic Devices.

PubMed

Lam, Jeun-Yan; Shih, Chien-Chung; Lee, Wen-Ya; Chueh, Chu-Chen; Jang, Guang-Way; Huang, Cheng-Jyun; Tung, Shih-Huang; Chen, Wen-Chang

2018-05-30

Exploiting biomass has raised great interest as an alternative to the fossil resources for environmental protection. In this respect, polyethylene furanoate (PEF), one of the bio-based polyesters, thus reveals a great potential to replace the commonly used polyethylene terephthalate (PET) on account of its better mechanical, gas barrier, and thermal properties. Herein, a bio-based, flexible, conductive film is successfully developed by coupling a PEF plastic substrate with silver nanowires (Ag NWs). Besides the appealing advantage of renewable biomass, PEF also exhibits a good transparency around 90% in the visible wavelength range, and its constituent polar furan moiety is revealed to enable an intense interaction with Ag NWs to largely enhance the adhesion of Ag NWs grown above, as exemplified by the superior bending and peeling durability than the currently prevailing PET substrate. Finally, the efficiency of conductive PEF/Ag NWs film in fabricating efficient flexible organic thin-film transistor and organic photovoltaic (OPV) is demonstrated. The OPV device achieves a power conversion efficiency of 6.7%, which is superior to the device based on ITO/PEN device, manifesting the promising merit of the bio-based PEF for flexible electronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of organic-inorganic hetero-interfaces and electrical transport in semiconducting nanostructures

NASA Astrophysics Data System (ADS)

Wagner, Sean Robert

As the electronics industry continues to evolve and move towards functional electronic devices with increasing complexity and functionality, it becomes important to explore materials outside the regime of conventional semiconductors. Organic semiconducting small molecules have received a large amount of attention due to their high degree of flexibility, the option to perform molecular synthesis to modify their electronic and magnetic properties, and their ability to organize into highly-ordered functionalized nanostructures and thin films. Being able to form complex nanostructures and thin films with molecular precision, while maintaining the ability to tune properties through modifications in the molecular chemistry could result in vast improvements in conventional device architectures. However, before this is realized, there still remains a significant lack of understanding regarding how these molecules interact with various substrate surfaces as well as their intermolecular interactions. The interplay between these interactions can produce drastic changes in the molecular orientation and ordering at the hetero-interface, which can affect the transport properties of the molecular thin film and ultimately modify the performance of the organic electronic device. This study first focuses on the growth dynamics, molecular ordering, and molecular orientation of metal phthalocyanine (MPc) molecules, particularly on Si, a substrate which is notoriously difficult to form an organized organic thin film on due to the surface dangling bonds. By deactivating these bonds, the formation of a highly ordered organic molecular thin film becomes possible. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, low-energy electron diffraction, and density functional theory calculations, the growth evolution of MPc molecules ( M = Zn, Cu, Co) from the single molecule level to multilayered films on the deactivated Si(111)-B surface is investigated. Initial tests are centered around thermally evaporated ZnPc. These molecules display a highly-ordered, close-packed, tilted configuration which differs from any known bulk packing motif. The ZnPc molecules are able to diffuse rapidly on the Si surface and preferentially nucleate at Si step-edges. This is followed by the formation of highly-ordered anisotropic stripe structures which grow across the Si terraces, i.e. anisotropic step-flow growth. The step-flow growth mode further impacts the growth by reducing the allowed symmetry of the molecular domains such that thin films with an exclusive in-plane molecular ordering are formed. Additionally, the ZnPc tilted packing motif stabilizes the molecular film, allowing it to maintain this packing for multilayered films, despite the decreasing substrate influence. The strength of the MPc-substrate interaction can be modified by changing the central transition-metal ion within the molecule. Through selective p-d orbital coupling between MPc molecules and the substrate, the degree of orbital coupling can induce modifications in the molecular ordering and orientation of MPc molecules at the interface. The secondary focus of this study is to initiate preliminary experimentation towards understanding how ordered organic molecular thin films can be applied to silicon-based devices that could have a significant impact on the electronics market. Si nanomembrane is a flexible, low-dimensional nanomaterial with electronic properties that are highly sensitive to the interface condition. By merging the knowledge of MPc thin film growth on Si with Si nanomembrane technology, possibilities towards modifying the transport properties of nanomaterials through engineering the organic-inorganic hetero-interface can be explored.

Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

NASA Astrophysics Data System (ADS)

Su, Yaorong

Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces engineering on improving the electrical characteristics of OTFTs is of great technological importance. For the dielectric/semiconductor interface, an octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) is used to modify the surface of ATO (ODPA/ATO). For the electrode/semiconductor interface, a simple in-situ modified Cu (M-Cu) is employed as source-drain (S/D) electrodes in stead of commonly used Au. The electrical characteristics of pentacene TFT are drastically enhanced upon interfaces modification. Moreover, by encapsulating the M-Cu with a thin layer of Au (Au/ M-Cu), the device performance is further improved. The detailed mechanism is systematically explored. Finally, organic electronic devices on flexible plastic substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. One of the most critical issues in realization flexible OTFTs is the integration of gate dielectrics with flexible substrates. We have successfully incorporated the ODPA/ATO with Au coated flexible polyimide (PI) substrate. By using Au/M-Cu as S/D electrode, the flexible pentacene TFTs show outstanding electrical performance. In addition, the mechanical flexibility and reliability of the devices are studied in detail. Our approach demonstrates an effective way to realize low-cost, high-performance flexible OTFTs.

Freestanding and Reactive Thin Films Fabricated by Covalent Layer-by-Layer Assembly and Subsequent Lift-Off of Azlactone-Containing Polymer Multilayers

PubMed Central

Buck, Maren E.

2010-01-01

We report an approach to the fabrication of freestanding and amine-reactive thin films that is based on the reactive layer-by-layer assembly and subsequent lift-off of azlactone-containing polymer multilayers. We demonstrate that covalently crosslinked multilayers fabricated using the azlactone-functionalized polymer poly(2-vinyl-4,4-dimethylazlactone) (PVDMA) and a primary amine-containing polymer [poly(ethyleneimine) (PEI)] can be delaminated from planar glass and silicon surfaces by immersion in mildly acidic aqueous environments to yield flexible freestanding membranes. These freestanding membranes are robust and can withstand exposure to strong acid, strong base, or incubation in high ionic strength solutions that typically lead to the disruption and erosion of polymer multilayers assembled by reversible weak interactions (e.g., ‘polyelectrolyte multilayers’ assembled by electrostatic interactions or hydrogen bonding). We demonstrate further that these PEI/PVDMA assemblies contain residual reactive azlactone functionality that can be exploited to chemically modify the films (either directly after fabrication or after they have been lifted off of the substrates on which they were fabricated) using a variety of amine-functionalized small molecules. These freestanding membranes can also be transferred readily onto other objects (for example, onto the surfaces of planar substrates containing holes or pores) to fabricate suspended polymer membranes and other film-functionalized interfaces. In addition to planar, two-dimensional freestanding films, this approach can be used to fabricate and isolate three-dimensional freestanding membranes (e.g., curved films or tubes) by layer-by-layer assembly on, and subsequent lift-off from, the surfaces of topologically complex substrates (e.g., the curved ends of glass tubing, etc.). The results of this investigation, when combined, suggest the basis of methods for the fabrication of stable, chemically-reactive, and flexible polymer thin films and membranes of potential utility in a variety of fundamental and applied contexts. PMID:20857952

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

PubMed

Ning, Honglong; Zeng, Yong; Kuang, Yudi; Zheng, Zeke; Zhou, Panpan; Yao, Rihui; Zhang, Hongke; Bao, Wenzhong; Chen, Gang; Fang, Zhiqiang; Peng, Junbiao

2017-08-23

Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al 2 O 3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm 2 scanning area). More significantly, a bilayer channel structure (IGZO/Al 2 O 3 ) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm 2 /(Vs), an I on /I off ratio of 4.4 × 10 5 , a threshold voltage (V th ) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al 2 O 3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

Graphene-Based Flexible and Transparent Tunable Capacitors.

PubMed

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Fully-flexible supercapacitors using spray-deposited carbon-nanotube films as electrodes

NASA Astrophysics Data System (ADS)

Lee, Churl Seung; Bae, Joonho

2013-12-01

Fully-flexible carbon-nanotube-based supercapacitors were successfully fabricated using a spray method. For electrodes, multiwalled carbon-nanotube films sprayed on polyethylene terephthalate (PET) substrates were employed. Thin Al films on PET were used as current collectors. The electrolyte was 1 M KNO3. Cyclic voltammetry and galvanostatic charge-discharge measurements on the flexible supercapacitors revealed that the area-specific capacitance was 0.11 mF/cm2. Electrochemical impedance spectroscopy of the supercapacitors resulted in a low internal resistance (3.7 Ω). The energy density and the power density of the flexible supercapacitor were measured to be 3.06 × 10-8 Wh/cm2 and 2.65 × 10-7 W/cm2, respectively. The Bode | z| and phase-angle plots showed that the supercapacitors functioned close to ideal capacitors at the frequencies near 2 kHz. These results indicate that the spray deposition method of carbon nanotubes could be promising for fabricating flexible energy devices or electronics.

Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

PubMed

Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

2015-07-03

Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

PubMed Central

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-01-01

In this work, deionized (DI) water dissociation was used to treat and change the contact angle of the surface of stainless steel substrates followed by the spin coating of P(VDF-TrFE) material for the fabrication of tactile sensors. The contact angle of the stainless steel surface decreased 14° at −30 V treatment; thus, the adhesion strength between the P(VDF-TrFE) thin film and the stainless steel substrate increased by 90%. Although the adhesion strength was increased at negative voltage treatment, it is observed that the crystallinity value of the P(VDF-TrFE) thin film declined to 37% at −60 V. In addition, the remanent polarization value of the P(VDF-TrFE) thin film declined from 5.6 μC/cm2 to 4.61 μC/cm2 for treatment voltages between −5 V and −60 V. A maximum value of approximately 1000 KV/cm of the coercive field value was obtained with the treatment at −15 V. The d33 value was approximately −10.7 pC/N for the substrate treated at 0 V and reached a minimum of −5 pC/N for treatment at −60 V. By using the P(VDF-TrFE) thin-film as the sensing material for tactile sensors, human pulse measurements were obtained from areas including the carotid, brachial, ankle, radial artery, and apical regions. In addition, the tactile sensor is suitable for monitoring the Cun, Guan, and Chi acupoints located at the radial artery region in Traditional Chinese Medicine (TCM). Waveform measurements of the Cun, Guan, and Chi acupoints are crucial because, in TCM, the various waveforms provided information regarding the health conditions of organs. PMID:24177729

Thermoplastic tape compaction device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, V.W.

1994-12-27

A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin bandmore » of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.« less

Photolithographic Synthesis of High-Density DNA and RNA Arrays on Flexible, Transparent, and Easily Subdivided Plastic Substrates.

PubMed

Holden, Matthew T; Carter, Matthew C D; Wu, Cheng-Hsien; Wolfer, Jamison; Codner, Eric; Sussman, Michael R; Lynn, David M; Smith, Lloyd M

2015-11-17

The photolithographic fabrication of high-density DNA and RNA arrays on flexible and transparent plastic substrates is reported. The substrates are thin sheets of poly(ethylene terephthalate) (PET) coated with cross-linked polymer multilayers that present hydroxyl groups suitable for conventional phosphoramidite-based nucleic acid synthesis. We demonstrate that by modifying array synthesis procedures to accommodate the physical and chemical properties of these materials, it is possible to synthesize plastic-backed oligonucleotide arrays with feature sizes as small as 14 μm × 14 μm and feature densities in excess of 125 000/cm(2), similar to specifications attainable using rigid substrates such as glass or glassy carbon. These plastic-backed arrays are tolerant to a wide range of hybridization temperatures, and improved synthetic procedures are described that enable the fabrication of arrays with sequences up to 50 nucleotides in length. These arrays hybridize with S/N ratios comparable to those fabricated on otherwise identical arrays prepared on glass or glassy carbon. This platform supports the enzymatic synthesis of RNA arrays and proof-of-concept experiments are presented showing that the arrays can be readily subdivided into smaller arrays (or "millichips") using common laboratory-scale laser cutting tools. These results expand the utility of oligonucleotide arrays fabricated on plastic substrates and open the door to new applications for these important bioanalytical tools.

Thermoplastic tape compaction device

DOEpatents

Campbell, V.W.

1994-12-27

A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

NASA Technical Reports Server (NTRS)

Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

2005-01-01

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

PubMed

Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

2018-03-01

Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superstrong encapsulated monolayer graphene by the modified anodic bonding.

PubMed

Jung, Wonsuk; Yoon, Taeshik; Choi, Jongho; Kim, Soohyun; Kim, Yong Hyup; Kim, Taek-Soo; Han, Chang-Soo

2014-01-07

We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m(-2) about 310% that of van der Waals bonding (0.45 J m(-2)) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.

Amorphous TiO 2 Compact Layers via ALD for Planar Halide Perovskite Photovoltaics

DOE PAGES

Kim, In Soo; Haasch, Richard T.; Cao, Duyen H.; ...

2016-09-06

A low temperature (< 120 °C) route to pinhole-free amorphous TiO 2 compact layers may pave the way to more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize low-temperature thermal atomic layer deposition (ALD) to synthesize ultra-thin (12 nm) compact TiO 2 underlayers for planar halide perovskite PV. While device performance with as-deposited TiO 2 films is poor, we identify room temperature UV-O 3 treatment as a route to device efficiency comparable to crystalline TiO 2 thin films synthesized by higher temperature methods. Here, we further explore the chemical, physical, and interfacial properties 2more » that might explain the improved performance through x-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, and x-ray photoelectron spectroscopy. These findings challenge our intuition about effective electron selective layers as well as point the way to a greater selection of flexible substrates and more stable inverted device designs.« less

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Photoluminescence Architectures for Disease Diagnosis: From Graphene to Thin-Layer Transition Metal Dichalcogenides and Oxides.

PubMed

He, Xiao-Peng; Tian, He

2016-01-13

Ever since the discovery of graphene, increasing efforts have been devoted to the use of this stellar material as well as the development of other graphene-like materials such as thin-layer transition metal dichalcogenides and oxides (TMD/Os) for a variety of applications. Because of their large surface area and unique optical properties, these two-dimensional materials with a size ranging from the micro- to the nanoscale have been employed as the substrate to construct photoluminescence architectures for disease diagnosis as well as theranostics. These architectures are built through the simple self-assembly of labeled biomolecular probes with the substrate material, leading to signal quenching. Upon the specific interaction of the architecture with a target biomarker, the signal can be spontaneously restored in a reversible manner. Meanwhile, by co-loading therapeutic agents and employing the inherent photo-thermal properties of the material substrates, a combined disease imaging and therapy (theranostics) can be achieved. This review highlights the latest advances in the construction and application of graphene and TMD/O based thin-layer material composites for single-target and multiplexed detection of a variety of biomarkers and theranostics. These versatile material architectures, owing to their ease in preparation, low cost and flexibility in functionalization, provide promising tools for both basic biochemical research and clinical applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mouro, J.; Gualdino, A.; Chu, V.

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three differentmore » types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.« less

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

A flexible top-emitting organic light-emitting diode on steel foil

NASA Astrophysics Data System (ADS)

Xie, Zhiyuan; Hung, Liang-Sun; Zhu, Furong

2003-11-01

An efficient flexible top-emitting organic light-emitting diode (FTOLED) was developed on a thin steel foil. The FTOLED was constructed on the spin-on-glass (SOG)-coated steel substrate with an organic stack of NPB/Alq 3 sandwiched by a highly reflective Ag anode and a semitransparent Sm cathode. An ultrathin plasma-polymerized hydrocarbon film (CF X) was interposed between the Ag anode and the NPB layer to enhance hole-injection, and an additional Alq 3 layer was overlaid on the Sm cathode to increase light output. The FTOLED showed a peak efficiency of 4.4 cd/A higher than 3.7 cd/A of a convention NPB/Alq 3-based bottom-emitting OLED.

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

2004-01-01

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films.

PubMed

Purandare, Sumit; Gomez, Eliot F; Steckl, Andrew J

2014-03-07

Organic light-emitting diodes (OLED) were fabricated on flexible and transparent reconstituted cellulose obtained from wood pulp. Cellulose is naturally available, abundant, and biodegradable and offers a unique substrate alternative for the fabrication of flexible OLEDs. Transparent cellulose material was formed by dissolution of cellulose in an organic solvent (dimethyl acetamide) at elevated temperature (165 °C) in the presence of a salt (LiCl). The optical transmission of 40-μm thick transparent cellulose sheet averaged 85% over the visible spectrum. High brightness and high efficiency thin film OLEDs were fabricated on transparent cellulose films using phosphorescent Ir(ppy)3 as the emitter material. The OLEDs achieved current and luminous emission efficiencies as high as 47 cd A(-1) and 20 lm W(-1), respectively, and a maximum brightness of 10,000 cd m(-2).

High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films

NASA Astrophysics Data System (ADS)

Purandare, Sumit; Gomez, Eliot F.; Steckl, Andrew J.

2014-03-01

Organic light-emitting diodes (OLED) were fabricated on flexible and transparent reconstituted cellulose obtained from wood pulp. Cellulose is naturally available, abundant, and biodegradable and offers a unique substrate alternative for the fabrication of flexible OLEDs. Transparent cellulose material was formed by dissolution of cellulose in an organic solvent (dimethyl acetamide) at elevated temperature (165 °C) in the presence of a salt (LiCl). The optical transmission of 40-μm thick transparent cellulose sheet averaged 85% over the visible spectrum. High brightness and high efficiency thin film OLEDs were fabricated on transparent cellulose films using phosphorescent Ir(ppy)3 as the emitter material. The OLEDs achieved current and luminous emission efficiencies as high as 47 cd A-1 and 20 lm W-1, respectively, and a maximum brightness of 10 000 cd m-2.

Flexible nanoporous tunable electrical double layer biosensors for sweat diagnostics.

PubMed

Munje, Rujuta D; Muthukumar, Sriram; Panneer Selvam, Anjan; Prasad, Shalini

2015-09-30

An ultra-sensitive and highly specific electrical double layer (EDL) modulated biosensor, using nanoporous flexible substrates for wearable diagnostics is demonstrated with the detection of the stress biomarker cortisol in synthetic and human sweat. Zinc oxide thin film was used as active region in contact with the liquid i.e. synthetic and human sweat containing the biomolecules. Cortisol detection in sweat was accomplished by measuring and quantifying impedance changes due to modulation of the double layer capacitance within the electrical double layer through the application of a low orthogonally directed alternating current (AC) electric field. The EDL formed at the liquid-semiconductor interface was amplified in the presence of the nanoporous flexible substrate allowing for measuring the changes in the alternating current impedance signal due to the antibody-hormone interactions at diagnostically relevant concentrations. High sensitivity of detection of 1 pg/mL or 2.75 pmol cortisol in synthetic sweat and 1 ng/mL in human sweat is demonstrated with these novel biosensors. Specificity in synthetic sweat was demonstrated using a cytokine IL-1β. Cortisol detection in human sweat was demonstrated over a concentration range from 10-200 ng/mL.

Flexible nanoporous tunable electrical double layer biosensors for sweat diagnostics

NASA Astrophysics Data System (ADS)

Munje, Rujuta D.; Muthukumar, Sriram; Panneer Selvam, Anjan; Prasad, Shalini

2015-09-01

An ultra-sensitive and highly specific electrical double layer (EDL) modulated biosensor, using nanoporous flexible substrates for wearable diagnostics is demonstrated with the detection of the stress biomarker cortisol in synthetic and human sweat. Zinc oxide thin film was used as active region in contact with the liquid i.e. synthetic and human sweat containing the biomolecules. Cortisol detection in sweat was accomplished by measuring and quantifying impedance changes due to modulation of the double layer capacitance within the electrical double layer through the application of a low orthogonally directed alternating current (AC) electric field. The EDL formed at the liquid-semiconductor interface was amplified in the presence of the nanoporous flexible substrate allowing for measuring the changes in the alternating current impedance signal due to the antibody-hormone interactions at diagnostically relevant concentrations. High sensitivity of detection of 1 pg/mL or 2.75 pmol cortisol in synthetic sweat and 1 ng/mL in human sweat is demonstrated with these novel biosensors. Specificity in synthetic sweat was demonstrated using a cytokine IL-1β. Cortisol detection in human sweat was demonstrated over a concentration range from 10-200 ng/mL.

Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

2018-05-01

Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate.

PubMed

Meena, Jagan Singh; Chu, Min-Ching; Kuo, Shiao-Wei; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-03-20

We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free film growth had occurred on the film surface. After oxygen (O(2)) plasma pretreatment and subsequent annealing at 250 degrees C, the film on the PI substrate exhibited a low leakage current density of 3.64 x 10(-9) A cm(-2) at 5 V and a maximum capacitance density of 10.35 fF microm(-2) at 1 MHz. The as-deposited sol-gel film was completely oxidized when employing O(2) plasma at a relatively low temperature (ca. 250 degrees C), thereby enhancing the electrical performance. We employed X-ray photoelectron spectroscopy (XPS) at both high and low resolution to examine the chemical composition of the film subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy, revealed that O(2) plasma treatment was the most effective process for the complete oxidation of hafnium atoms at low temperature. A study of the insulator properties indicated the excellent bendability of our MIM capacitor; the flexible PI substrate could be bent up to 10(5) times and folded to near 360 degrees without any deterioration in its electrical performance.

Large-area high-efficiency flexible PHOLED lighting panels

NASA Astrophysics Data System (ADS)

Pang, Huiqing; Mandlik, Prashant; Levermore, Peter A.; Silvernail, Jeff; Ma, Ruiqing; Brown, Julie J.

2012-09-01

Organic Light Emitting Diodes (OLEDs) provide various attractive features for next generation illumination systems, including high efficiency, low power, thin and flexible form factor. In this work, we incorporated phosphorescent emitters and demonstrated highly efficient white phosphorescent OLED (PHOLED) devices on flexible plastic substrates. The 0.94 cm2 small-area device has total thickness of approximately 0.25 mm and achieved 63 lm/W at 1,000 cd/m2 with CRI = 85 and CCT = 2920 K. We further designed and fabricated a 15 cm x 15 cm large-area flexible white OLED lighting panels, finished with a hybrid single-layer ultra-low permeability single layer barrier (SLB) encapsulation film. The flexible panel has an active area of 116.4 cm2, and achieved a power efficacy of 47 lm/W at 1,000 cd/m2 with CRI = 83 and CCT = 3470 K. The efficacy of the panel at 3,000 cd/m2 is 43 lm/W. The large-area flexible PHOLED lighting panel is to bring out enormous possibilities to the future general lighting applications.

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

NASA Technical Reports Server (NTRS)

Hartley, F.; Malek, C.; Neogi, J.

2001-01-01

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

NASA Astrophysics Data System (ADS)

D'Arcy, Julio M.; Tran, Henry D.; Stieg, Adam Z.; Gimzewski, James K.; Kaner, Richard B.

2012-05-01

A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated. Electronic supplementary information (ESI) available: Droplet coalescence, catenoid formation, mechanism of film growth, scanning electron micrographs showing carbon nanotube alignment, flexible transparent films of SWCNTs, AFM images of a chemically converted graphene film, and SEM images of SWCNT free-standing thin films. See DOI: 10.1039/c2nr00010e

Zinc nitride thin films: basic properties and applications

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Gómez-Castaño, M.; García Núñez, C.; Domínguez, M.; Vázquez, L.; Pau, J. L.

2017-02-01

Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250°C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.

Magneto-Optic Laser Beam Steering

DTIC Science & Technology

1975-10-01

Thin Substrates 16 1. Substrate Thinning 16 2. LPE on TMn Substrates 18 3. Statics of BRIG Crystal Films on Thin Substrates... 19 4. Results...6 Garnet Etch Rate 17 7 Thin Substrate: Film Both Sides 20 8 Thin Substrate: Film One Side 21 9 Film with Substrate Both Sides 23 10 Ratio...Robbins et al reported that iron garnet films could be grown on gallium garnet sub- strates by using a coprecipitated slurry. This technique was

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Determining the virtual surface in the thermal evaporation process of magnesium fluoride from a tungsten boat for different deposition rates, to be used in precision optical components

NASA Astrophysics Data System (ADS)

Tejada Esteves, A.; Gálvez de la Puente, G.

2013-11-01

Vacuum thermal evaporation has, for some time now, been the principal method for the deposition of thin films, given, among other aspects, its simplicity, flexibility, and relatively low cost. Therefore, the development of models attempting to predict the deposition patterns of given thin film materials in different locations of a vacuum evaporation chamber are arguably important. With this in mind, we have designed one of such models for the thermal evaporation process of magnesium fluoride (MgF2), a common material used in optical thin films, originating from a tungsten boat source. For this we took several deposition samples in glass slide substrates at different locations in the vacuum chamber, considering as independent variables the mean deposition rate, and the axial and vertical distances of the source to the substrate. After a careful analysis by matrix method from the spectral transmittance data of the samples, while providing as output data the spectral transmittance, as well as the physical thickness of the films, both as functions of the aforementioned variables, the virtual surface of the source was determined.

Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

NASA Technical Reports Server (NTRS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Development of a RadFET Linear Array for Intracavitary in vivo Dosimetry During External Beam Radiotherapy and Brachytherapy

NASA Astrophysics Data System (ADS)

Price, R. A.; Benson, C.; Joyce, M. J.; Rodgers, K.

2004-08-01

We present the details of a new linear array dosimeter consisting of a chain of semiconductors mounted on an ultra-thin (50 /spl mu/m thick) flexible substrate and housed in an intracavitary catheter. The semiconductors, manufactured by NMRC Cork, have not been packaging and incorporate a passivation layer that allows them to be mounted on the substrate using flip-chip-bonding. This paper reports, for the first time, the construction of a multiple (ten) detector array suited to in vivo dosimetry in the rectum, esophagus and vagina during external beam radiotherapy, as well as being adaptable to in vivo dosimetry during brachytherapy and diagnostic radiology.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Fully transparent and rollable electronics.

PubMed

Mativenga, Mallory; Geng, Di; Kim, Byungsoon; Jang, Jin

2015-01-28

Major obstacles toward the manufacture of transparent and flexible display screens include the difficulty of finding transparent and flexible semiconductors and electrodes, temperature restrictions of flexible plastic substrates, and bulging or warping of the flexible electronics during processing. Here we report the fabrication and performance of fully transparent and rollable thin-film transistor (TFT) circuits for display applications. The TFTs employ an amorphous indium-gallium-zinc oxide semiconductor (with optical band gap of 3.1 eV) and amorphous indium-zinc oxide transparent conductive electrodes, and are built on 15-μm-thick solution-processed colorless polyimide (CPI), resulting in optical transmittance >70% in the visible range. As the CPI supports processing temperatures >300 °C, TFT performance on plastic is similar to that on glass, with typical field-effect mobility, turn-on voltage, and subthreshold voltage swing of 12.7 ± 0.5 cm(2)/V·s, -1.7 ± 0.2 V, and 160 ± 29 mV/dec, respectively. There is no significant degradation after rolling the TFTs 100 times on a cylinder with a radius of 4 mm or when shift registers, each consisting of 40 TFTs, are operated while bent to a radius of 2 mm. For handling purposes, carrier glass is used during fabrication, together with a very thin (∼1 nm) solution-processed carbon nanotube (CNT)/graphene oxide (GO) backbone that is first spin-coated on the glass to decrease adhesion of the CPI to the glass; peel strength of the CPI from glass decreases from 0.43 to 0.10 N/cm, which eases the process of detachment performed after device fabrication. Given that the CNT/GO remains embedded under the CPI after detachment, it minimizes wrinkling and decreases the substrate's tensile elongation from 8.0% to 4.6%. Device performance is also stable under electrostatic discharge exposures up to 10 kV, as electrostatic charge can be released via the conducting CNTs.

Transparent nanocellulosic multilayer thin films on polylactic acid with tunable gas barrier properties.

PubMed

Aulin, Christian; Karabulut, Erdem; Tran, Amy; Wågberg, Lars; Lindström, Tom

2013-08-14

The layer-by-layer (LbL) deposition method was used for the build-up of alternating layers of nanofibrillated cellulose (NFC) or carboxymethyl cellulose (CMC) with a branched, cationic polyelectrolyte, polyethyleneimine (PEI) on flexible poly (lactic acid) (PLA) substrates. With this procedure, optically transparent nanocellulosic films with tunable gas barrier properties were formed. 50 layer pairs of PEI/NFC and PEI/CMC deposited on PLA have oxygen permeabilities of 0.34 and 0.71 cm(3)·μm/m(2)·day·kPa at 23 °C and 50% relative humidity, respectively, which is in the same range as polyvinyl alcohol and ethylene vinyl alcohol. The oxygen permeability of these multilayer nanocomposites outperforms those of pure NFC films prepared by solvent-casting. The nanocellulosic LbL assemblies on PLA substrates was in detailed characterized using a quartz crystal microbalance with dissipation (QCM-D). Atomic force microscopy (AFM) reveals large structural differences between the PEI/NFC and the PEI/CMC assemblies, with the PEI/NFC assembly showing a highly entangled network of nanofibrils, whereas the PEI/CMC surfaces lacked structural features. Scanning electron microscopy images showed a nearly perfect uniformity of the nanocellulosic coatings on PLA, and light transmittance results revealed remarkable transparency of the LbL-coated PLA films. The present work demonstrates the first ever LbL films based on high aspect ratio, water-dispersible nanofibrillated cellulose, and water-soluble carboxymethyl cellulose polymers that can be used as multifunctional films and coatings with tailorable properties, such as gas barriers and transparency. Owing to its flexibility, transparency and high-performance gas barrier properties, these thin film assemblies are promising candidates for several large-scale applications, including flexible electronics and renewable packaging.

Away from silicon era: the paper electronics

NASA Astrophysics Data System (ADS)

Martins, R.; Brás, B.; Ferreira, I.; Pereira, L.; Barquinha, P.; Correia, N.; Costa, R.; Busani, T.; Gonçalves, A.; Pimentel, A.; Fortunato, E.

2011-02-01

Today there is a strong interest in the scientific and industrial community concerning the use of biopolymers for electronic applications, mainly driven by low-cost and disposable applications. Adding to this interest, we must recognize the importance of the wireless auto sustained and low energy consumption electronics dream. This dream can be fulfilled by cellulose paper, the lightest and the cheapest known substrate material, as well as the Earth's major biopolymer and of tremendous global economic importance. The recent developments of oxide thin film transistors and in particular the production of paper transistors at room temperature had contributed, as a first step, for the development of disposable, low cost and flexible electronic devices. To fulfil the wireless demand, it is necessary to prove the concept of self powered devices. In the case of paper electronics, this implies demonstrating the idea of self regenerated thin film paper batteries and its integration with other electronic components. Here we demonstrate this possibility by actuating the gate of paper transistors by paper batteries. We found that when a sheet of cellulose paper is covered in both faces with thin layers of opposite electrochemical potential materials, a voltage appears between both electrodes -paper battery, which is also self-regenerated. The value of the potential depends upon the materials used for anode and cathode. An open circuit voltage of 0.5V and a short-circuit current density of 1μA/cm2 were obtained in the simplest structure produced (Cu/paper/Al). For actuating the gate of the paper transistor, seven paper batteries were integrated in the same substrate in series, supplying a voltage of 3.4V. This allows proper ON/OFF control of the paper transistor. Apart from that transparent conductive oxides can be also used as cathode/anode materials allowing so the production of thin film batteries with transparent electrodes compatible with flexible, invisible, self powered and wireless electronics.

A three-dimensional metal grid mesh as a practical alternative to ITO

NASA Astrophysics Data System (ADS)

Jang, Sungwoo; Jung, Woo-Bin; Kim, Choelgyu; Won, Phillip; Lee, Sang-Gil; Cho, Kyeong Min; Jin, Ming Liang; An, Cheng Jin; Jeon, Hwan-Jin; Ko, Seung Hwan; Kim, Taek-Soo; Jung, Hee-Tae

2016-07-01

The development of a practical alternative to indium tin oxide (ITO) is one of the most important issues in flexible optoelectronics. In spite of recent progress in this field, existing approaches to prepare transparent electrodes do not satisfy all of their essential requirements. Here, we present a new substrate-embedded tall (~350 nm) and thin (~30 nm) three-dimensional (3D) metal grid mesh structure with a large area, which is prepared via secondary sputtering. This structure satisfies most of the essential requirements of transparent electrodes for practical applications in future opto-electronics: excellent optoelectronic performance (a sheet resistance of 9.8 Ω □-1 with a transmittance of 85.2%), high stretchability (no significant change in resistance for applied strains <15%), a sub-micrometer mesh period, a flat surface (a root mean square roughness of approximately 5 nm), no haze (approximately 0.5%), and strong adhesion to polymer substrates (it survives attempted detachment with 3M Scotch tape). Such outstanding properties are attributed to the unique substrate-embedded 3D structure of the electrode, which can be obtained with a high aspect ratio and in high resolution over large areas with a simple process. As a demonstration of its suitability for practical applications, our transparent electrode was successfully tested in a flexible touch screen panel. We believe that our approach opens up new practical applications in wearable electronics.The development of a practical alternative to indium tin oxide (ITO) is one of the most important issues in flexible optoelectronics. In spite of recent progress in this field, existing approaches to prepare transparent electrodes do not satisfy all of their essential requirements. Here, we present a new substrate-embedded tall (~350 nm) and thin (~30 nm) three-dimensional (3D) metal grid mesh structure with a large area, which is prepared via secondary sputtering. This structure satisfies most of the essential requirements of transparent electrodes for practical applications in future opto-electronics: excellent optoelectronic performance (a sheet resistance of 9.8 Ω □-1 with a transmittance of 85.2%), high stretchability (no significant change in resistance for applied strains <15%), a sub-micrometer mesh period, a flat surface (a root mean square roughness of approximately 5 nm), no haze (approximately 0.5%), and strong adhesion to polymer substrates (it survives attempted detachment with 3M Scotch tape). Such outstanding properties are attributed to the unique substrate-embedded 3D structure of the electrode, which can be obtained with a high aspect ratio and in high resolution over large areas with a simple process. As a demonstration of its suitability for practical applications, our transparent electrode was successfully tested in a flexible touch screen panel. We believe that our approach opens up new practical applications in wearable electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03060b

Low-Temperature Growth of Amorphous Silicon Films and Direct Fabrication of Solar Cells on Flexible Polyimide and Photo-Paper Substrates

NASA Astrophysics Data System (ADS)

Madaka, Ramakrishna; Kanneboina, Venkanna; Agarwal, Pratima

2018-05-01

Direct deposition of hydrogenated amorphous silicon (a-Si:H) thin films and fabrication of solar cells on polyimide (PI) and photo-paper (PP) substrates using a rf-plasma-enhanced chemical vapor deposition technique is reported. Intrinsic amorphous silicon films were deposited on PI and PP substrates by varying the substrate temperature (T s) over 70-150°C to optimize the deposition parameters for best quality films. The films deposited on both PI and PP substrates at a temperature as low as 70°C showed a photosensitivity (σ ph/σ d) of nearly 4 orders of magnitude which increased to 5-6 orders of magnitude when the substrate temperature was increased to 130-150°C. The increase in σ ph/σ d is due to the presence of a few nanometer-sized crystallites embedded in the film. Solar cells (n-i-p) were fabricated directly on PI, PP and Corning 1737 glass (Corning) at 150°C for different thicknesses of an intrinsic amorphous silicon layer (i-layer). With the increase in i-layer thickness from 330 nm to 700 nm, the solar cell efficiency was found to increase from 3.81% to 5.02% on the Corning substrate whereas on the flexible PI substrate an increase from 3.38% to 4.38% was observed. On the other hand, in the case of cells on PP, the i-layer thickness was varied from 200 nm to 700 nm and the best cell efficiency 1.54% was obtained for the 200-nm-thick i-layer. The fabrication of a-Si (n-i-p) solar cells on photo-paper is presented for the first time.

Tribology of bio-inspired nanowrinkled films on ultrasoft substrates.

PubMed

Lackner, Juergen M; Waldhauser, Wolfgang; Major, Lukasz; Teichert, Christian; Hartmann, Paul

2013-01-01

Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum) with high elasticity of the bulk (epidermis, dermis, hypodermis). The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue): Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC) and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high and the initial friction coefficient of the film against the sliding counterpart low, e.g. found for DLC.

Tribology of bio-inspired nanowrinkled films on ultrasoft substrates

PubMed Central

Lackner, Juergen M.; Waldhauser, Wolfgang; Major, Lukasz; Teichert, Christian; Hartmann, Paul

2013-01-01

Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum) with high elasticity of the bulk (epidermis, dermis, hypodermis). The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue): Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC) and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high and the initial friction coefficient of the film against the sliding counterpart low, e.g. found for DLC. PMID:24688710

Highly flexible, all solid-state micro-supercapacitors from vertically aligned carbon nanotubes.

PubMed

Hsia, Ben; Marschewski, Julian; Wang, Shuang; In, Jung Bin; Carraro, Carlo; Poulikakos, Dimos; Grigoropoulos, Costas P; Maboudian, Roya

2014-02-07

We report a highly flexible planar micro-supercapacitor with interdigitated finger electrodes of vertically aligned carbon nanotubes (VACNTs). The planar electrode structures are patterned on a thin polycarbonate substrate with a facile, maskless laser-assisted dry transfer method. Sputtered Ni is used to reduce the in-plane resistance of the VACNT electrodes. An ionogel, an ionic liquid in a semi-solid matrix, is used as an electrolyte to form a fully solid-state device. We measure a specific capacitance of 430 μF cm(-2) for a scan rate of 0.1 V s(-1) and achieve rectangular cyclic voltammograms at high scan rates of up to 100 V s(-1). Minimal change in capacitance is observed under bending. Mechanical fatigue tests with more than 1000 cycles confirm the high flexibility and durability of the novel material combination chosen for this device. Our results indicate that this scalable and facile fabrication technique shows promise for application in integrated energy storage for all solid-state flexible microdevices.

Flexible piezoelectric nanogenerator in wearable self-powered active sensor for respiration and healthcare monitoring

NASA Astrophysics Data System (ADS)

Liu, Z.; Zhang, S.; Jin, Y. M.; Ouyang, H.; Zou, Y.; Wang, X. X.; Xie, L. X.; Li, Z.

2017-06-01

A wearable self-powered active sensor for respiration and healthcare monitoring was fabricated based on a flexible piezoelectric nanogenerator. An electrospinning poly(vinylidene fluoride) thin film on silicone substrate was polarized to fabricate the flexible nanogenerator and its electrical property was measured. When periodically stretched by a linear motor, the flexible piezoelectric nanogenerator generated an output open-circuit voltage and short-circuit current of up to 1.5 V and 400 nA, respectively. Through integration with an elastic bandage, a wearable self-powered sensor was fabricated and used to monitor human respiration, subtle muscle movement, and voice recognition. As respiration proceeded, the electrical output signals of the sensor corresponded to the signals measured by a physiological signal recording system with good reliability and feasibility. This self-powered, wearable active sensor has significant potential for applications in pulmonary function evaluation, respiratory monitoring, and detection of gesture and vocal cord vibration for the personal healthcare monitoring of disabled or paralyzed patients.

Flexible and mechanical strain resistant large area SERS active substrates

NASA Astrophysics Data System (ADS)

Singh, J. P.; Chu, Hsiaoyun; Abell, Justin; Tripp, Ralph A.; Zhao, Yiping

2012-05-01

We report a cost effective and facile way to synthesize flexible, uniform, and large area surface enhanced Raman scattering (SERS) substrates using an oblique angle deposition (OAD) technique. The flexible SERS substrates consist of 1 μm long, tilted silver nanocolumnar films deposited on flexible polydimethylsiloxane (PDMS) and polyethylene terephthalate (PET) sheets using OAD. The SERS enhancement activity of these flexible substrates was determined using 10-5 M trans-1,2-bis(4-pyridyl) ethylene (BPE) Raman probe molecules. The in situ SERS measurements on these flexible substrates under mechanical (tensile/bending) strain conditions were performed. Our results show that flexible SERS substrates can withstand a tensile strain (ε) value as high as 30% without losing SERS performance, whereas the similar bending strain decreases the SERS performance by about 13%. A cyclic tensile loading test on flexible PDMS SERS substrates at a pre-specified tensile strain (ε) value of 10% shows that the SERS intensity remains almost constant for more than 100 cycles. These disposable and flexible SERS substrates can be integrated with biological substances and offer a novel and practical method to facilitate biosensing applications.

Growth and Characterization of Large Scale (Sb1-xBix)2 Te3 Thin Films on Mica

NASA Astrophysics Data System (ADS)

Ni, Yan; Zhang, Zhen; Jiles, David

2015-03-01

Topological insulators (TIs) attract attentions for both fundamental science and potential applications because of their bulk band inversion arising from the strong spin orbital coupling. However, it is necessary to tune the Fermi level and Dirac cone in 3D TI (Sb1-xBix)2 Te3 to make an ideal system for TI applications. In this work, we report high quality (Sb1-xBix)2 Te3 thin films grown on mica substrate by molecular beam epitaxy. The surface roughness of the thin film can reach as low as 0.7 nm in a large area by van der Waals epitaxy. (Sb1-xBix)2 Te3 thin film with x = 0.04 shows a local maxima in the room temperature sheet resistance, which indicates a minimization of the carrier density due to band structure engineering. Moreover, for higher Bi concentration, due to an increase of the surface roughness and corresponding reduction of electron mobility, the sheet resistance increases. Our results on the feasibility of depositing (Sb1-xBix)2 Te3 in wide Bi range on mica substrate will helpful for the application of TI at room temperature and flexible electronics. Authors would like to thank the financial support from the U.S. National Science Foundation under the Award No. 1201883.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

PubMed

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-10-08

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

2017-09-01

In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

PubMed Central

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-01-01

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls.

PubMed

Barrios, Carlos Angulo; Canalejas-Tejero, Víctor

2017-01-01

We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

Influence of Clay Platelet Spacing on Oxygen Permeability of Thin Film Assemblies

NASA Astrophysics Data System (ADS)

Priolo, Morgan; Gamboa, Daniel; Grunlan, Jaime

2010-03-01

Thin films of anionic natural montmorrilonite clay and various polyelectrolytes have been produced by alternately dipping a plastic substrate into dilute aqueous mixtures containing each ingredient in an effort to show the influence of clay platelet spacing on thin film permeability. After polymer-clay layers have been sequentially deposited, the resulting transparent films exhibit a brick wall nanostructure comprised of completely exfoliated clay bricks in polymeric mortar. This brick wall forms an extremely tortuous path for a molecule to traverse, creating channels perpendicular to the concentration gradient that increase the molecule's diffusion length and delay its transmission. To a first approximation, greater clay spacing (i.e., reduced clay concentration) produces greater oxygen barrier. Oxygen transmission rates below 0.005 cm^3/m^2.day have been achieved for films with only eight clay layers (total thickness of only 200 nm). With optical transparencies greater than 86% and the ability to be microwaved, these thin film composites are good candidates for flexible electronics packaging and foil replacement for food.

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

PubMed

Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

2014-06-13

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

The Effect of Sodium Dodecyl Sulfate on PEDOT:PSS and Its Application to Organic Photovoltaic Solar Cells.

PubMed

Hwang, Ki-Hwan; Seo, Hyeon Jin; Nam, Sang-Hun; Boo, Jin-Hyo

2015-10-01

Recently, the use of PSS in flexible device electrodes has been reported. PSS treatment consists of a step in which a small amount of surfactant is added to enhance the adhesion between PSS and the substrate or TCO materials. However, basic research into the effect of the surfactant is lacking. We studied the effects of sodium dodecyl sulfate (SDS) at controlled concentrations in aqueous PSS solution and that it enhanced the conductivity in the mixed thin films with surfactant and PSS. The thin films were prepared by the spin coating method. To study the structural effects on the resulting electrical properties, the thin films were investigated by FE-SEM (Field Emission Scanning Electron Microscopy) and AFM (Atomic Force Microscopy). At the same time, the electrical properties were investigated using a 4-point probe and solar simulator.

All 2D, high mobility, flexible, transparent thin film transistor

DOEpatents

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

2017-01-17

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

A convenient method for large-scale STM mapping of freestanding atomically thin conductive membranes

NASA Astrophysics Data System (ADS)

Uder, B.; Hartmann, U.

2017-06-01

Two-dimensional atomically flat sheets with a high flexibility are very attractive as ultrathin membranes but are also inherently challenging for microscopic investigations. We report on a method using Scanning Tunneling Microscopy (STM) under ultra-high vacuum conditions for large-scale mapping of several-micrometer-sized freestanding single and multilayer graphene membranes. This is achieved by operating the STM at unusual parameters. We found that large-scale scanning on atomically thin membranes delivers valuable results using very high tip-scan speeds combined with high feedback-loop gain and low tunneling currents. The method ultimately relies on the particular behavior of the freestanding membrane in the STM which is much different from that of a solid substrate.

Formation of ferromagnetic molecular thin films from blends by annealing

PubMed Central

Robaschik, Peter; Ma, Ye; Din, Salahud

2017-01-01

We report on a new approach for the fabrication of ferromagnetic molecular thin films. Co-evaporated films of manganese phthalocyanine (MnPc) and tetracyanoquinodimethane (TCNQ) have been produced by organic molecular beam deposition (OMBD) on rigid (glass, silicon) and flexible (Kapton) substrates kept at room temperature. The MnPc:TCNQ films are found to be entirely amorphous due to the size mismatch of the molecules. However, by annealing while covering the samples highly crystalline MnPc films in the β-polymorph can be obtained at 60 °C lower than when starting with pure MnPc films. The resulting films exhibit substantial coercivity (13 mT) at 2 K and a Curie temperature of 11.5 K. PMID:28900600

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

On the design of capacitive sensors using flexible electrodes for multipurpose measurements

NASA Astrophysics Data System (ADS)

Thibault, Pierre; Diribarne, Pantxo; Fournier, Thierry; Perraud, Sylvain; Puech, Laurent; Wolf, P.-Etienne; Rousset, Bernard; Vallcorba, Roser

2007-04-01

This article evaluates the potential of capacitive measurements using flexible electrodes to access various physical quantities. These electrodes are made of a thin metallic film, typical thickness 0.2 μm, evaporated on a plastic substrate. Their large flexibility enables them to be mounted in complex geometries such as curved surfaces. In the configuration of planar condensers, using a very sensitive commercial capacitive bridge and a three-terminal measurement method, several measurements are presented. A relative resolution of 10-8 for the thermal expansion of samples is obtained at low temperature in a differential configuration. The same technique adopted for pressure gauge measurements at low temperature led to a typical 0.1 Pa resolution over a dynamic range of 104 Pa. In the configuration of interleaved electrodes, condensers have been used to measure wetting by either bulk liquid helium or by thin continuous helium films in a cylindrical pipe. Both experimental and numerical evidence is provided, showing that the close proximity of a reference ground potential significantly increases the relative sensitivity to fluid wetting. Further, interleaved electrodes can be used to access both the area that is covered by a liquid film but also to determine the thickness of this film, provided it is comparable to the periodicity of the electrode pattern.

Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors.

PubMed

Basiricò, Laura; Basile, Alberto Francesco; Cosseddu, Piero; Gerardin, Simone; Cramer, Tobias; Bagatin, Marta; Ciavatti, Andrea; Paccagnella, Alessandro; Bonfiglio, Annalisa; Fraboni, Beatrice

2017-10-11

Organic electronic devices fabricated on flexible substrates are promising candidates for applications in environments where flexible, lightweight, and radiation hard materials are required. In this work, device parameters such as threshold voltage, charge mobility, and trap density of 13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic thin-film transistors (OTFTs) have been monitored for performing electrical measurements before and after irradiation by high-energy protons. The observed reduction of charge carrier mobility following irradiation can be only partially ascribed to the increased trap density. Indeed, we used other techniques to identify additional effects induced by proton irradiation in such devices. Atomic force microscopy reveals morphological defects occurring in the organic dielectric layer induced by the impinging protons, which, in turn, induce a strain on the TIPS-pentacene crystallites lying above. The effects of this strain are investigated by density functional theory simulations of two model structures, which describe the TIPS-pentacene crystalline films at equilibrium and under strain. The two different density of states distributions in the valence band have been correlated with the photocurrent spectra acquired before and after proton irradiation. We conclude that the degradation of the dielectric layer and the organic semiconductor sensitivity to strain are the two main phenomena responsible for the reduction of OTFT mobility after proton irradiation.

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

PubMed Central

Vidor, Fábio F.; Meyers, Thorsten; Hilleringmann, Ulrich

2016-01-01

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates. PMID:28335282

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications.

PubMed

Vidor, Fábio F; Meyers, Thorsten; Hilleringmann, Ulrich

2016-08-23

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high- k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the I ON / I OFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V / V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

Tensile stress-dependent fracture behavior and its influences on photovoltaic characteristics in flexible PbS/CdS thin-film solar cells.

PubMed

Lee, Seung Min; Yeon, Deuk Ho; Mohanty, Bhaskar Chandra; Cho, Yong Soo

2015-03-04

Tensile stress-dependent fracture behavior of flexible PbS/CdS heterojunction thin-film solar cells on indium tin oxide-coated polyethylene terephthalate (PET) substrates is investigated in terms of the variations of fracture parameters with applied strains and their influences on photovoltaic properties. The PbS absorber layer that exhibits only mechanical cracks within the applied strain range from ∼0.67 to 1.33% is prepared by chemical bath deposition at different temperatures of 50, 70, and 90 °C. The PbS thin films prepared at 50 °C demonstrate better mechanical resistance against the applied bending strain with the highest crack initiating bending strain of ∼1.14% and the lowest saturated crack density of 0.036 μm(-1). Photovoltaic properties of the cells depend on the deposition temperature and the level of applied tensile stress. The values of short-circuit current density and fill factor are dramatically reduced above a certain level of applied strain, while open-circuit voltage is nearly maintained. The dependency of photovoltaic properties on the progress of fractures is understood as related to the reduced fracture energy and toughness, which is limitedly controllable by microstructural features of the absorber layer.

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

David M. Dean

2012-10-30

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is themore » key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.« less

A lightweight solar array study

NASA Technical Reports Server (NTRS)

Josephs, R. H.

1977-01-01

A sample module was assembled to model a portion of a flexible extendable solar array, a type that promises to become the next generation of solar array design. The resulting study of this module is intended to provide technical support to the array designer for lightweight component selection, specifications, and tests. Selected from available lightweight components were 127-micron-thick wrap-around contacted solar cells, 34- micron-thick sputtered glass covers, and as a substrate a 13-micron-thick polyimide film clad with a copper printed circuit. Each component displayed weaknesses. The thin solar cells had excessive breakage losses. Sputtered glass cover adhesion was poor, and the covered cell was weaker than the cell uncovered. Thermal stresses caused some cell delamination from the model solar array substrate.

Highly flexible, transparent and conducting CuS-nanosheet networks for flexible quantum-dot solar cells.

PubMed

Xu, Zijie; Li, Teng; Zhang, Fayin; Hong, Xiaodan; Xie, Shuyao; Ye, Meidan; Guo, Wenxi; Liu, Xiangyang

2017-03-17

The rapid development of modern electronics has given rise to a higher demand for flexible and wearable energy sources. Flexible transparent conducting electrodes (TCEs) are one of the essential components of flexible/wearable thin-film solar cells (SCs). In this regard, we present highly transparent and conducting CuS-nanosheet (NS) networks with an optimized sheet resistance (R s ) as low as 50 Ω sq -1 at 85% transmittance as a counter electrode (CE) for flexible quantum-dot solar cells (QDSCs). The CuS NS network electrode exhibits remarkable mechanical flexibility under bending tests compared to traditional ITO/plastic substrates and sputtered CuS films. Herein, CuS NS networks not only served as conducting films for collecting electrons from the external circuit, but also served as superior catalysts for reducing polysulfide (S 2- /S x 2- ) electrolytes. A power conversion efficiency (PCE) up to 3.25% was achieved for the QDSCs employing CuS NS networks as CEs, which was much higher than those of the devices based on Pt networks and sputtered CuS films. We believe that such CuS network TCEs with high flexibility, transparency, conductivity and catalytic activity could be widely used in making wearable electronic products.

Method of producing an electronic unit having a polydimethylsiloxane substrate and circuit lines

DOEpatents

Davidson, James Courtney [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Tovar, Armando R [San Antonio, TX

2012-06-19

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

Internal stress-assisted epitaxial lift-off process for flexible thin film (In)GaAs solar cells on metal foil

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Jung, Sang Hyun; Kim, Chang Zoo; Shin, Hyun-Beom; Choi, JeHyuk; Kang, Ho Kwan

2017-12-01

Flexible thin film (In)GaAs solar cells are grown by metalorganic chemical vapor deposition on GaAs substrates and transferred to 30 μm thick Au foil by internal stress-assisted epitaxial lift-off processes. The internal stress is induced by replacing the solar cell epi-layers from GaAs to In0.015Ga0.985As, which has a slightly larger lattice constant. The compressive strained layer thickness was varied from 0 to 4.5 μm to investigate the influence of the internal stress on the epitaxial lift-off time. The etching time in the epitaxial lift-off process was reduced from 36 to 4 h by employing a GaAs/In0.015Ga0.985As heterojunction structure that has a compressive film stress of -59.0 MPa. We found that the partially strained epi-structure contributed to the much faster lateral etching rate with spontaneous bending. Although an efficiency degradation problem occurred in the strained solar cell, it was solved by optimizing the epitaxial growth conditions.

Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics.

PubMed

Cantarella, Giuseppe; Vogt, Christian; Hopf, Raoul; Münzenrieder, Niko; Andrianakis, Panagiotis; Petti, Luisa; Daus, Alwin; Knobelspies, Stefan; Büthe, Lars; Tröster, Gerhard; Salvatore, Giovanni A

2017-08-30

Although recent progress in the field of flexible electronics has allowed the realization of biocompatible and conformable electronics, systematic approaches which combine high bendability (<3 mm bending radius), high stretchability (>3-4%), and low complexity in the fabrication process are still missing. Here, we show a technique to induce randomly oriented and customized wrinkles on the surface of a biocompatible elastomeric substrate, where Thin-Film Transistors (TFTs) and circuits (inverter and logic NAND gates) based on amorphous-IGZO are fabricated. By tuning the wavelength and the amplitude of the wrinkles, the devices are fully operational while bent to 13 μm bending radii as well as while stretched up to 5%, keeping unchanged electrical properties. Moreover, a flexible rectifier is also realized, showing no degradation in the performances while flat or wrapped on an artificial human wrist. As proof of concept, transparent TFTs are also fabricated, presenting comparable electrical performances to the nontransparent ones. The extension of the buckling approach from our TFTs to circuits demonstrates the scalability of the process, prospecting applications in wireless stretchable electronics to be worn or implanted.

High resolution laser patterning of ITO on PET substrate

NASA Astrophysics Data System (ADS)

Zhang, Tao; Liu, Di; Park, Hee K.; Yu, Dong X.; Hwang, David J.

2013-03-01

Cost-effective laser patterning of indium tin oxide (ITO) thin film coated on flexible polyethylene terephthalate (PET) film substrate for touch panel was studied. The target scribing width was set to the order of 10 μm in order to examine issues involved with higher feature resolution. Picosecond-pulsed laser and Q-switched nanosecond-pulsed laser at the wavelength of 532nm were applied for the comparison of laser patterning in picosecond and nanosecond regimes. While relatively superior scribing quality was achieved by picosecond laser, 532 nm wavelength showed a limitation due to weaker absorption in ITO film. In order to seek for cost-effective solution for high resolution ITO scribing, nanosecond laser pulses were applied and performance of 532nm and 1064nm wavelengths were compared. 1064nm wavelength shows relatively better scribing quality due to the higher absorption ratio in ITO film, yet at noticeable substrate damage. Through single pulse based scribing experiments, we inspected that reduced pulse overlapping is preferred in order to minimize the substrate damage during line patterning.

Preparation of Cobalt-Based Electrodes by Physical Vapor Deposition on Various Nonconductive Substrates for Electrocatalytic Water Oxidation.

PubMed

Wu, Yizhen; Wang, Le; Chen, Mingxing; Jin, Zhaoxia; Zhang, Wei; Cao, Rui

2017-12-08

Artificial photosynthesis requires efficient anodic electrode materials for water oxidation. Cobalt metal thin films are prepared through facile physical vapor deposition (PVD) on various nonconductive substrates, including regular and quartz glass, mica sheet, polyimide, and polyethylene terephthalate (PET). Subsequent surface electrochemical modification by cyclic voltammetry (CV) renders these films active for electrocatalytic water oxidation, reaching a current density of 10 mA cm -2 at a low overpotential of 330 mV in 1.0 m KOH solution. These electrodes are robust with unchanged activity throughout prolonged chronopotentiometry measurements. This work is thus significant to show that the combination of PVD and CV is very valuable and convenient to fabricate active electrodes on various nonconductive substrates, particularly with flexible polyimide and PET substrates. This efficient, safe and convenient method can potentially be expanded to many other electrochemical applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Flexible transparent electrode

NASA Astrophysics Data System (ADS)

Demiryont, Hulya; Shannon, Kenneth C., III; Moorehead, David; Bratcher, Matthew

2011-06-01

This paper presents the properties of the EclipseTECTM transparent conductor. EclipseTECTM is a room temperature deposited nanostructured thin film coating system comprised of metal-oxide semiconductor elements. The system possesses metal-like conductivity and glass-like transparency in the visible region. These highly conductive TEC films exhibit high shielding efficiency (35dB at 1 to 100GHz). EclipseTECTM can be deposited on rigid or flexible substrates. For example, EclipseTECTM deposited on polyethylene terephthalate (PET) is extremely flexible that can be rolled around a 9mm diameter cylinder with little or no reduction in electrical conductivity and that can assume pre-extension states after an applied stress is relieved. The TEC is colorless and has been tailored to have high visible transmittance which matches the eye sensitivity curve and allows the viewing of true background colors through the coating. EclipseTECTM is flexible, durable and can be tailored at the interface for applications such as electron- or hole-injecting OLED electrodes as well as electrodes in flexible displays. Tunable work function and optical design flexibility also make EclipseTECTM well-suited as a candidate for grid electrode replacement in next-generation photovoltaic cells.

Metal-assisted exfoliation (MAE): green process for transferring graphene to flexible substrates and templating of sub-nanometer plasmonic gaps (Presentation Recording)

NASA Astrophysics Data System (ADS)

Zaretski, Aliaksandr V.; Marin, Brandon C.; Moetazedi, Herad; Dill, Tyler J.; Jibril, Liban; Kong, Casey; Tao, Andrea R.; Lipomi, Darren J.

2015-09-01

This paper describes a new technique, termed "metal-assisted exfoliation," for the scalable transfer of graphene from catalytic copper foils to flexible polymeric supports. The process is amenable to roll-to-roll manufacturing, and the copper substrate can be recycled. We then demonstrate the use of single-layer graphene as a template for the formation of sub-nanometer plasmonic gaps using a scalable fabrication process called "nanoskiving." These gaps are formed between parallel gold nanowires in a process that first produces three-layer thin films with the architecture gold/single-layer graphene/gold, and then sections the composite films with an ultramicrotome. The structures produced can be treated as two gold nanowires separated along their entire lengths by an atomically thin graphene nanoribbon. Oxygen plasma etches the sandwiched graphene to a finite depth; this action produces a sub-nanometer gap near the top surface of the junction between the wires that is capable of supporting highly confined optical fields. The confinement of light is confirmed by surface-enhanced Raman spectroscopy measurements, which indicate that the enhancement of the electric field arises from the junction between the gold nanowires. These experiments demonstrate nanoskiving as a unique and easy-to-implement fabrication technique that is capable of forming sub-nanometer plasmonic gaps between parallel metallic nanostructures over long, macroscopic distances. These structures could be valuable for fundamental investigations as well as applications in plasmonics and molecular electronics.

High performance ZnO:Al films deposited on PET substrates using facing target sputtering

NASA Astrophysics Data System (ADS)

Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

2013-10-01

ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

Solvent-Assisted Gel Printing for Micropatterning Thin Organic-Inorganic Hybrid Perovskite Films.

PubMed

Jeong, Beomjin; Hwang, Ihn; Cho, Sung Hwan; Kim, Eui Hyuk; Cha, Soonyoung; Lee, Jinseong; Kang, Han Sol; Cho, Suk Man; Choi, Hyunyong; Park, Cheolmin

2016-09-27

While tremendous efforts have been made for developing thin perovskite films suitable for a variety of potential photoelectric applications such as solar cells, field-effect transistors, and photodetectors, only a few works focus on the micropatterning of a perovskite film which is one of the most critical issues for large area and uniform microarrays of perovskite-based devices. Here we demonstrate a simple but robust method of micropatterning a thin perovskite film with controlled crystalline structure which guarantees to preserve its intrinsic photoelectric properties. A variety of micropatterns of a perovskite film are fabricated by either microimprinting or transfer-printing a thin spin-coated precursor film in soft-gel state with a topographically prepatterned elastomeric poly(dimethylsiloxane) (PDMS) mold, followed by thermal treatment for complete conversion of the precursor film to a perovskite one. The key materials development of our solvent-assisted gel printing is to prepare a thin precursor film with a high-boiling temperature solvent, dimethyl sulfoxide. The residual solvent in the precursor gel film makes the film moldable upon microprinting with a patterned PDMS mold, leading to various perovskite micropatterns in resolution of a few micrometers over a large area. Our nondestructive micropatterning process does not harm the intrinsic photoelectric properties of a perovskite film, which allows for realizing arrays of parallel-type photodetectors containing micropatterns of a perovskite film with reliable photoconduction performance. The facile transfer of a micropatterned soft-gel precursor film on other substrates including mechanically flexible plastics can further broaden its applications to flexible photoelectric systems.

Foldable and Cytocompatible Sol-gel TiO2 Photonics

NASA Astrophysics Data System (ADS)

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B.; Geiger, Sarah J.; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-09-01

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

Foldable and Cytocompatible Sol-gel TiO2 Photonics

PubMed Central

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B.; Geiger, Sarah J.; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-01-01

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices. PMID:26344823

Foldable and Cytocompatible Sol-gel TiO2 Photonics.

PubMed

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B; Geiger, Sarah J; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-09-07

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

MILSTAR's flexible substrate solar array: Lessons learned, addendum

NASA Technical Reports Server (NTRS)

Gibb, John

1990-01-01

MILSTAR's Flexible Substrate Solar Array (FSSA) is an evolutionary development of the lightweight, flexible substrate design pioneered at Lockheed during the seventies. Many of the features of the design are related to the Solar Array Flight Experiment (SAFE), flown on STS-41D in 1984. FSSA development has created a substantial technology base for future flexible substrate solar arrays such as the array for the Space Station Freedom. Lessons learned during the development of the FSSA can and should be applied to the Freedom array and other future flexible substrate designs.

Flexible, transparent electrodes using carbon nanotubes

PubMed Central

2012-01-01

We prepare thin single-walled carbon nanotube networks on a transparent and flexible substrate with different densities, using a very simple spray method. We measure the electric impedance at different frequencies Z(f) in the frequency range of 40 Hz to 20 GHz using two different methods: a two-probe method in the range up to 110 MHz and a coaxial (Corbino) method in the range of 10 MHz to 20 GHz. We measure the optical absorption and electrical conductivity in order to optimize the conditions for obtaining optimum performance films with both high electrical conductivity and transparency. We observe a square resistance of 1 to 8.5 kΩ for samples showing 65% to 85% optical transmittance, respectively. For some applications, we need flexibility and not transparency: for this purpose, we deposit a thick film of single-walled carbon nanotubes on a flexible silicone substrate by spray method from an aqueous suspension of carbon nanotubes in a surfactant (sodium dodecyl sulphate), thereby obtaining a flexible conducting electrode showing an electrical resistance as low as 200 Ω/sq. When stretching up to 10% and 20%, the electrical resistance increases slightly, recovering the initial value for small elongations up to 10%. We analyze the stretched and unstretched samples by Raman spectroscopy and observe that the breathing mode on the Raman spectra is highly sensitive to stretching. The high-energy Raman modes do not change, which indicates that no defects are introduced when stretching. Using this method, flexible conducting films that may be transparent are obtained just by employing a very simple spray method and can be deposited on any type or shape of surface. PMID:23074999

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shervin, Shahab; Asadirad, Mojtaba; Materials Science and Engineering Program, University of Houston, Houston, Texas 77204

This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strainmore » in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.« less

Dry transfer of graphene to dielectrics and flexible substrates using polyimide as a transparent and stable intermediate layer

NASA Astrophysics Data System (ADS)

Marchena, Miriam; Wagner, Frederic; Arliguie, Therese; Zhu, Bin; Johnson, Benedict; Fernández, Manuel; Lai Chen, Tong; Chang, Theresa; Lee, Robert; Pruneri, Valerio; Mazumder, Prantik

2018-07-01

We demonstrate the direct transfer of graphene from Cu foil to rigid and flexible substrates, such as glass and PET, using as an intermediate layer a thin film of polyimide (PI) mixed with an aminosilane (3-aminopropyltrimethoxysilane) or only PI, respectively. While the dry removal of graphene by an adhesive has been previously demonstrated—being removed from graphite by scotch tape or from a Cu foil by thick epoxy (~20 µm) on Si—our work is the first step towards making a substrate ready for device fabrication using the polymer-free technique. Our approach leads to an article that is transparent, thermally stable—up to 350 °C—and free of polymer residues on the device side of the graphene, which is contrary to the case of the standard wet-transfer process using PMMA. Also, in addition to previous novelty, our technique is fast and easier by using current industrial technology—a hot press and a laminator—with Cu recycling by its mechanical peel-off; it provides high interfacial stability in aqueous media and it is not restricted to a specific material—polyimide and polyamic acids can be used. All the previous reasons demonstrate a feasible process that enables device fabrication.

A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.

PubMed

Cho, Kyung-Hoon; Seong, Tae-Geun; Choi, Joo-Young; Kim, Jin-Seong; Kwon, Jae-Hong; Shin, Sang-Il; Chung, Myung-Ho; Ju, Byeong-Kwon; Nahm, Sahn

2009-10-20

The amorphous Bi(5)Nb(3)O(15) film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O(2) film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm(-2) during and after 10(5) bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O(2) film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm(2) V(-1) s(-1), an on/off current modulation of 10(5), and a small subthreshold slope of 0.2 V decade(-1) under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm(2) V(-1 )s(-1) during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O(2) film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics.

PubMed

Wang, Binghao; Huang, Wei; Chi, Lifeng; Al-Hashimi, Mohammed; Marks, Tobin J; Facchetti, Antonio

2018-05-22

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

Vertically-aligned Mn(OH) 2 nanosheet films for flexible all-solid-state electrochemical supercapacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ziyuan; Gong, Jiangfeng; Tang, Chunmei

We report that the arrangement of the electrode materials is a significant contributor for constructing high performance supercapacitor. Here, vertically-aligned Mn(OH) 2 nanosheet thin films were synthesized by cathodic electrodeposition technique on flexible Au coated polyethylene terephthalate substrates. Morphologies, microstructures, chemical compositions and valence state of the nanosheet films were characterized systematically. It shows that the nanosheets arranged vertically to the substrate, forming a porous nanowall structures and creating large open framework, which greatly facilitate the adsorption or diffusion of electrolyte ions for faradaic redox reaction. Electrochemical tests of the films show the specific capacitance as high as 240.2 Fmore » g -1 at 1.0 A g -1. The films were employed to assemble symmetric all-solid-state supercapacitors with LiCl/PVA gel severed as solid electrolyte. Finally, the solid devices exhibit high volumetric capacitance of 39.3 mF cm -3 at the current density 0.3 mA cm -3 with robust cycling stability. The superior performance is attributed to the vertically-aligned configuration.« less

Vertically-aligned Mn(OH) 2 nanosheet films for flexible all-solid-state electrochemical supercapacitors

DOE PAGES

Yang, Ziyuan; Gong, Jiangfeng; Tang, Chunmei; ...

2017-08-28

We report that the arrangement of the electrode materials is a significant contributor for constructing high performance supercapacitor. Here, vertically-aligned Mn(OH) 2 nanosheet thin films were synthesized by cathodic electrodeposition technique on flexible Au coated polyethylene terephthalate substrates. Morphologies, microstructures, chemical compositions and valence state of the nanosheet films were characterized systematically. It shows that the nanosheets arranged vertically to the substrate, forming a porous nanowall structures and creating large open framework, which greatly facilitate the adsorption or diffusion of electrolyte ions for faradaic redox reaction. Electrochemical tests of the films show the specific capacitance as high as 240.2 Fmore » g -1 at 1.0 A g -1. The films were employed to assemble symmetric all-solid-state supercapacitors with LiCl/PVA gel severed as solid electrolyte. Finally, the solid devices exhibit high volumetric capacitance of 39.3 mF cm -3 at the current density 0.3 mA cm -3 with robust cycling stability. The superior performance is attributed to the vertically-aligned configuration.« less

Solution-processed single-wall carbon nanotube transistor arrays for wearable display backplanes

NASA Astrophysics Data System (ADS)

Kang, Byeong-Cheol; Ha, Tae-Jun

2018-01-01

In this paper, we demonstrate solution-processed single-wall carbon nanotube thin-film transistor (SWCNT-TFT) arrays with polymeric gate dielectrics on the polymeric substrates for wearable display backplanes, which can be directly attached to the human body. The optimized SWCNT-TFTs without any buffer layer on flexible substrates exhibit a linear field-effect mobility of 1.5cm2/V-s and a threshold voltage of around 0V. The statistical plot of the key device metrics extracted from 35 SWCNT-TFTs which were fabricated in different batches at different times conclusively support that we successfully demonstrated high-performance solution-processed SWCNT-TFT arrays which demand excellent uniformity in the device performance. We also investigate the operational stability of wearable SWCNT-TFT arrays against an applied strain of up to 40%, which is the essential for a harsh degree of strain on human body. We believe that the demonstration of flexible SWCNT-TFT arrays which were fabricated by all solution-process except the deposition of metal electrodes at process temperature below 130oC can open up new routes for wearable display backplanes.