Facies and age of the Oso Ridge Member (new), Abo Formation, Zuni Mountains, New Mexico

USGS Publications Warehouse

Armstrong, A.K.; Stamm, R.G.; Kottlowski, F.E.; Mamet, B.L.; Dutro, J.T.; Weary, D.J.

1994-01-01

The Oso Ridge Member (new), at the base of the Abo Formation, nonconformably overlies Proterozoic rocks. The member consists of some 9m of conglomerate and arkose composed principally of fragments of the underlying Proterozoic metamorphic rocks; thin, fossiliferous limestone lenses are interbedded with the arkose. Biota from the lenses include a phylloid alga, foraminifers, conodonts, brachiopods, and molluscs. The age of the Oso Ridge Member is Virgilian Late Pennsylvanian) to Wolfcampian (Early Permian). -from Authors

Virgin Valley opal district, Humboldt County, Nevada

USGS Publications Warehouse

Staatz, Mortimer Hay; Bauer, Herman L.

1951-01-01

The Virgin Valley opal district, Humboldt County, Nevada, is near the Oregon-Nevada border in the Sheldon Game Refuge. Nineteen claims owned by Jack and Toni Crane were examined, sampled, and tested radiometrically for uranium. Numerous discontinuous layers of opal are interbedded with a gently-dipping series of vitric tuff and ash which is at least 300 ft thick. The tuff and ash are capped by a dark, vesicular basalt in the eastern part of the area and by a thin layer of terrace qravels in the area along the west side of Virgin Valley. Silicification of the ash and tuff has produced a rock that ranges from partly opalized rock that resembles silicified shale to completely altered rock that is entirely translucent, and consists of massive, brown and pale-green opal. Carnotite, the only identified uranium mineral, occurs as fracture coatings or fine layers in the opal; in places, no uranium minerals are visible in the radioactive opal. The opal layers are irregular in extent and thickness. The exposed length of the layers ranges from 8 to 1, 200 ft or more, and the thickness of the layers ranges from 0. 1 to 3. 9 ft. The uranium content of each opal layer, and of different parts of the same layer, differs widely. On the east side of Virgin Valley four of the seven observed opal layers, nos. 3, 4, 5, and 7, are more radioactive than the average; and the uranium content ranges from 0. 002 to 0. 12 percent. Two samples, taken 5 ft apart across opal layer no. 7, contained 0. 003 and 0. -049 percent uranium. On the west side of the valley only four of the fifteen observed opal layers, nos; 9, , 10, 14, and 15, are more radioactive than the average; and the uranium content ranges from 0. 004 to 0. 047 percent. Material of the highest grade was found in a small discontinuous layer of pale-green opal (no. 4) on the east side of Virgin Valley. The grade of this layer ranged from 0. 027 to 0. 12 percent uranium.

Field occurrences and petrology of eclogites from the Dabie Mountains, Anhui, central China

NASA Astrophysics Data System (ADS)

Wang, X.; Jing, Y.; Liou, J. G.; Pan, G.; Liang, W.; Xia, M.; Maruyama, S.

1990-11-01

Four distinct types of eclogites are recognized according to their field occurrences and mineral parageneses in a gneiss terrane of the Dabie Mountains, a collision zone between the Sino-Korean and Yangtze cratons in central China. Some eclogites contain coesite and its quartz pseudomorphs enclosed in garnet and omphacite. Type I eclogites occur as layers in serpentinites and contain garnet, clinopyroxene, orthopyroxene, phengite, rutile, and coesite pseudomorph. Type II eclogites occur as lenticular bodies inside serpentinites and contain garnet, clinopyroxene, quartz, rutile, and edenitic hornblende. Type III eclogites occur as blocks of 2 cm to 20 m in size in a matrix of hornblende gneiss and biotite gneiss, and Type IV eclogites occur as thin layers interbedded with amphibolites. P- T estimates for these different eclogites indicate that they were formed under different physical conditions. All the eclogites were affected by later regional metamorphism for which the P- T conditions are estimated. This paper provides an introduction to the abundant eclogites from central China which have not been reported previously in Western literature. Specifically, the mode of field occurrence, petrography, mineral chemistry and formation conditions of the four types of eclogites are described. The paper is thus designed to establish a petrological framework for future detailed studies of the eclogites and their country rocks in an ancient zone of collision.

Lithology and paleontology of the reflective layer horizon a.

PubMed

Saito, T; Burckle, L H; Ewing, M

1966-12-02

Cores recovered from horizon A are Late Cretaceous (Maestrichtian) in age and consist o alternating layers of calcareous turbidites and "red clay." The presence of red clay suggests that the water depth in this area during Cretaceous time was at least as great as at present-more than 5100 meters. A middle Cretaceous (Cenomanian) core consisting of interbedded sand and gravel and light-to-dark-gray lutite was taken in the same area from a layer stratigraphically below the horizon; the presence of hydrogen sulfide and iron sulfide may indicate anaerobic conditions that may be attributable to local ponding of sediment in Cenomanian time.

Possible Origin of High-Amplitude Reflection Packages (HARPs) in the Canada Basin, Arctic Ocean

NASA Astrophysics Data System (ADS)

Lebedeva-Ivanova, Nina; Hutchinson, Deborah; Shimeld, John; Chian, Deping; Hart, Patrick; Jackson, Ruth; Saltus, Richard; Mosher, David

2013-04-01

The Canada Basin (CB) of the Arctic Ocean is a semi-enclosed ocean basin surrounded by the Alaskan and Canadian margins to the south and east, the Alpha-Mendeleev Large Igneous Province (AMLIP) to the north and the subsided continental Chukchi Borderland (ChB) to the west. During 2007-2011, US-Canada expeditions collected ~15,000 km multichannel seismic data and sonobuoy reflection and refraction seismic data with average spacing of ~80 km mostly over the CB and AMLIP. High-amplitude reflective packages (HARPs) underlie the mostly flat-lying sediments of CB. Although HARPs are discontinuous in the central CB, they become more continuous toward ChB and AMLIP. HARPs are often the most reflective events in the seismic section, exceeding even the seafloor reflection. Only rarely are reflections seen beneath HARPs. Where best developed, HARPs are ~100-300 ms TWTT, consisting of several high-amplitude wavelets with a pronounced narrow frequency band within the limits of ~10-30 Hz. This character of HARPs is consistent with patterns produced by constructive interference of thin beds (Widess, 1973). Forward modeling of sonobuoy data, synthetic tests, and frequency analysis of the tuning effect suggest that HARPs are composed of a series of alternating high- and low-velocity layers. The high-velocity layers are ~100-200 m thick with P-velocities of ~3.5-4.5 km/s. The low-velocity layers are about half as thick with velocities of ~2-3 km/s. A broad range of possible interpretations of rock composition exists from these velocities, e.g. sandstone and interbedded shale (Prince Patrick Island, Harrison and Brent, 2005); or tholeiitic basalts flows and sediments (Voring volcanic margin, Olanke and Eldholm, 1994); or sills and sediments (Newfoundland margin, Peron-Pinvidic et all, 2010). HARP can be associated with several origins. In the central and southern CB, where oceanic spreading is interpreted, HARPs are discontinuous among high-relief, but otherwise low-amplitude reflections interpreted to be large basement blocks. These discontinuous HARPs, associated with basement, are presumed synchronous with the seafloor spreading event that opened CB. Further north, near AMLIP, HARPs are more continuous over 10s of km, suggesting an origin associated with magmatism of AMLIP. In several areas in northern CB, HARPs have a shingled, en-echelon character, suggestive of sills intruding younger (i.e., post-rift) sediments. These relations suggest that HARPs are associated with basalts (flows and sills) interbedded with or separated by thinner sediment layers. Although the deep sediments and basement of CB are unsampled, seismic stratigraphic relationships suggest HARPs are of at least two ages: one associated with rifting/seafloor spreading (~125 Ma?) and a younger one associated with a post-rift magmatic pulse on AMLIP (~90-80 Ma?).

Synthetic resistivity calculations for the canonical depth-to-bedrock problem: A critical examination of the thin interbed problem and electrical equivalence theories

NASA Astrophysics Data System (ADS)

Weiss, C. J.; Knight, R.

2009-05-01

One of the key factors in the sensible inference of subsurface geologic properties from both field and laboratory experiments is the ability to quantify the linkages between the inherently fine-scale structures, such as bedding planes and fracture sets, and their macroscopic expression through geophysical interrogation. Central to this idea is the concept of a "minimal sampling volume" over which a given geophysical method responds to an effective medium property whose value is dictated by the geometry and distribution of sub- volume heterogeneities as well as the experiment design. In this contribution we explore the concept of effective resistivity volumes for the canonical depth-to-bedrock problem subject to industry-standard DC resistivity survey designs. Four models representing a sedimentary overburden and flat bedrock interface were analyzed through numerical experiments of six different resistivity arrays. In each of the four models, the sedimentary overburden consists of a thinly interbedded resistive and conductive laminations, with equivalent volume-averaged resistivity but differing lamination thickness, geometry, and layering sequence. The numerical experiments show striking differences in the apparent resistivity pseudo-sections which belie the volume-averaged equivalence of the models. These models constitute the synthetic data set offered for inversion in this Back to Basics Resistivity Modeling session and offer the promise to further our understanding of how the sampling volume, as affected by survey design, can be constrained by joint-array inversion of resistivity data.

Depositional setting of the Upper Jurassic Hith Anhydrite of the Arabian Gulf: An analog to holocene evaporites of the United Arab Emirates and Lake MacLeod of Western Australia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsharhan, A.S.; Kendall, C.G.St.C.

1994-07-01

The Upper Jurassic Hith Anhydrite is a major hydrocarbon seal in the Arabian Gulf region. Outcrops, core samples from the subsurface, and the literature indicate that the Hith Formation is composed mainly of anhydrite. In most locations where a section of the Hith Formation has been measured, this unit contains less than 20% carbonate much of which is in the form of thin laminations. This lack of carbonate, locally thick layers of salt, and the predominance of anhydrite favor a playa for the setting in which this sediment was accumulated. In fact, much of the Hith has the sedimentary characteristicsmore » of the Holocene Lake MacLeod playa of Western Australia, which is dominated by layers of gypsum and halite (what little carbonate that occurs is found in layers at the base of the section). Locally the Hith appears to have accumulated in a sabkha setting, particularly toward central Abu Dhabi where it pinches out into shallow-water, and peritidal carbonate. This sabkha setting is indicated by the interbedded relationship of the Hith anhydrites with these carbonates and the local predominance of horizontally flattened nodules and enterolithic layers of anhydrite. These latter features match some of the characteristic fabrics found in the Holocene coastal sabkhas of the United Arab Emirates. As with the local occurrences in the Hith, the Holocene sabkhas are dominated by carbonates and are divisible into a series of lateral facies belts. These are also expressed as equivalent vertical layers. Traced from seaward to landward, or from the base of the vertical sequence upward, these facies are characterized by (1) algal mat, (2) a layer of a gypsum crystal mush (3) active anhydrite replacement of gypsum (4) anhydrite with no gypsum mush, and (5) recycled eolianite and storm-washover sediments.« less

A newly discovered K-bentonite zone in the Lower Devonian of the Appalachian Basin; Basal Esopus and Needmore Formations (Late Pragian-Emsian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ver Straeten, C.A.

1992-01-01

The K-bentonite-rich interval of the Esopus Formation (eastern New York and northeastern Pennsylvania) overlies the coeval Oriskany/Glenerie/Ridgely Formations and ranges from 1 to 6.3 m in thickness. Six to seventeen soapy-feeling, yellow, tan, green, or gray clay to claystone beds (0.001 to 0.5 m-thick) interbedded with thin siltstone and chert beds (0.02--1 m-thick) characterize outcrops in eastern New York. Heavy mineral separates from these layers yield abundant uncorraded euhedral zircons and apatites, indicating that these are K-bentonites. In eastern Pennsylvania, the westernmost outcrop of the Esopus Formation displays a 2.3 m-thick massive, soapy-feeling clay to claystone-dominated interval. The presence ofmore » both coarse, highly abraded and small, fragile, pristine-appearing zircons and apatites from a 20 cm sampled interval may indicate a complex amalgamation/reworking history to the relatively thick, clay-dominated strata. Similar clay/claystone-rich strata have been found in the lower 0.15 to 1 m of the Beaverdam Member (Needmore Formation) in central Pennsylvania. Interbedded clays and claystones with or without minor siltstone beds characterize some outcrops. Other localities are clay-dominated, with minor amounts of quartz sand present in strata immediately overlying the Ridgely Sandstone. These newly discovered K-bentonite-rich strata mark a transition from shelfal orthoquartzites and carbonates to basinal black/dark gray shales similar to the overlying Middle Devonian Tioga ash interval. Deposition of ash-rich strata, associated with increased volcanic activity, coincided with subsidence of the foreland basin/relative sea level rise. These events were concurrent with a flush of siliciclastic sediments into the basin and are indicative of the onset of an early tectophase of the Devonian Acadian Orogeny.« less

Preliminary Assessment Springfield Air National Guard Base, Ohio Air National Guard, Springfield-Beckley Municipal Airport, Springfield, Ohio and Blue Ash Air National Guard Station, Ohio Air National Guard, Cincinnati, Ohio

DTIC Science & Technology

1988-12-01

called soapstone . The third member of the Niagaran Series, the Laurel Dolomite, is thinly bedded, bluish-gray in color, and approximately 5 to 9 feet...slopes of hills. This m formation has a total thickness of 250 feet, and includes beds of limestone, soft shale, clay, or soapstone . The shales...INTERBEDDED. IRON [mineral] - A heavy, magnetic , malleable and ductile, and chemically active mineral, the native metallic element Fe. JP-4 - A type

Preservation and Enhancement of the American Falls at Niagara.

DTIC Science & Technology

1975-01-01

Niagara Falls are located 19 miles downstream from Lake Erie. Goat Island divides the River into two Originally the Falls were located at the Niagara...years and permanently dewater a relatively uniform sheet of water falls over the crest. the American Falls. Luna Island located in the crest separates the...interbedded layers of limestones, dolomites, sandstones and shales. The enormous force of fallingdiversion tunnels leading to the Ontario Hydro power

Metropolitan Washington Area Water Supply Study. Appendix B. Plan Formulation, Assessment, and Evaluation.

DTIC Science & Technology

1983-09-01

which serve as aquifers. The aquifers include, in ascending order, the Patuxent, the Patapso, the Magothy , and the Aquia Formations. These aquifer...consist typically of sand layers of varying thickness interbedded with clays. The general thickness of the Patuxent, Patapsco, Magothy and Aquia in the...Aquifers. This was accomplished using a digital simulation model originally developed by the USGS for the Magothy Aquifer. The model uses a finite

Large landslides, composed of megabreccia, interbedded in Miocene basin deposits, southeastern Arizona

USGS Publications Warehouse

Krieger, Medora Louise Hooper

1977-01-01

The landslides in the Kearny and El Capitan Mountain quadrangles, Pinal and Gila Counties, Ariz., are tabular or lens like masses of megabreccia enclosed in Miocene basin deposits. The megabreccias within individual slide blocks are composed of pervasively brecciated Precambrian and younger formations that remain in normal stratigraphic sequence, indicating that each landslide moved as a fairly coherent mass. The megabreccias consist of fresh, mostly angular rock fragments in a comminuted matrix of the same composition as the fragments. The matrix ranges in amount from sparse to abundant. Where the matrix is sparse, the fragments fit tightly with little or no rotation. Locally fragments are rotated but not moved far; most units within a slide block are lithologically homogeneous. The Kearny landslides are conformably interbedded in steeply east-dipping playa and alluvial deposits. They form map units from a few tens of meters to nearly 4 km long and from less than 1 to 270 m wide. Narrow ridges expose sections through the landslides at about right angles to the direction of movement. The upper (proximal) ends have been eroded; the lower (distal) ends are buried. The El Capitan landslide dips very gently southward. Although partly dissected during erosion of the enclosing alluvial and lakebed deposits, its approximate original outline is still preserved. It forms a thin sheet, 5-15 m thick and at least 3.8 km long; the maximum outcrop width, near its distal end, is about 1.5 km. The Kearny landslides show little evidence of having exerted differential pressure on the underlying soft playa and alluvial deposits, and the contacts with the underlying sediments have little relief. The distal end of the El Capitan landslide, on the other hand, has considerable relief. As the landslide came to an abrupt stop, the end plowed into the underlying sediments, compressing them into fol9.s and forming sandstone dikes. The source of the El Capitan landslide is a well-defined amphitheater on the south side of El Capitan Mountain 1,500 to more than 3,000 m above and 1.5-3 km north of the proximal end of the landslide. The long distance traveled on a very gentle slope indicates that the El Capitan landslide had a very low coefficient of friction, similar to some modern and prehistoric avalanches. According to Shreve, they may have traveled on a thin lubricating layer of compressed air. The coefficient of friction of the Kearny landslides cannot be determined. However, the nonturbulent character of both the Kearny and El Capitan landslides indicates that they slid rather than flowed.

A new model for turbidity current behavior based on integration of flow monitoring and precision coring in a submarine canyon

USGS Publications Warehouse

Symons, William O.; Sumner, Esther J.; Paull, Charles K.; Cartigny, Matthieu J.B.; Xu, Jingping; Maier, Katherine L.; Lorenson, Thomas; Talling, Peter J.

2017-01-01

Submarine turbidity currents create some of the largest sediment accumulations on Earth, yet there are few direct measurements of these flows. Instead, most of our understanding of turbidity currents results from analyzing their deposits in the sedimentary record. However, the lack of direct flow measurements means that there is considerable debate regarding how to interpret flow properties from ancient deposits. This novel study combines detailed flow monitoring with unusually precisely located cores at different heights, and multiple locations, within the Monterey submarine canyon, offshore California, USA. Dating demonstrates that the cores include the time interval that flows were monitored in the canyon, albeit individual layers cannot be tied to specific flows. There is good correlation between grain sizes collected by traps within the flow and grain sizes measured in cores from similar heights on the canyon walls. Synthesis of flow and deposit data suggests that turbidity currents sourced from the upper reaches of Monterey Canyon comprise three flow phases. Initially, a thin (38–50 m) powerful flow in the upper canyon can transport, tilt, and break the most proximal moorings and deposit chaotic sands and gravel on the canyon floor. The initially thin flow front then thickens and deposits interbedded sands and silty muds on the canyon walls as much as 62 m above the canyon floor. Finally, the flow thickens along its length, thus lofting silty mud and depositing it at greater altitudes than the previous deposits and in excess of 70 m altitude.

A deep water turbidity origin for the Altuda Formation (Capitanian, Permian), Northwest Glass Mountains, Texas

USGS Publications Warehouse

Haneef, Mohammad; Rohr, D.M.; Wardlaw, B.R.

2000-01-01

The Altuda Formation (Capitanian) in the northwestern Glass Mountains is comprised of thin, even bedded limestones, dolostones, mixed clastic-carbonates, and silt/sandstones interbedded with basin-ward dipping wedge-shaped clinoforms of the Captian Limestone. The formation is characterized by graded bedding, planar laminations, flame structures, contorted/convolute bedding, horizontal branching burrows, and shelf-derived normal marine fauna. A detailed study of the Altuda Formation north of Old Blue Mountain, Glass Mountains, reveals that the formation in this area was deposited by turbidity currents in slope to basinal settings.

Spectral and stratigraphic mapping of hydrated minerals associated with interior layered deposits near the southern wall of Melas Chasma, Mars

NASA Astrophysics Data System (ADS)

Liu, Yang; Goudge, Timothy A.; Catalano, Jeffrey G.; Wang, Alian

2018-03-01

Orbital remote sensing data acquired from the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) onboard Mars Reconnaissance Orbiter (MRO), in conjunction with other datasets, are used to perform detailed spectral and stratigraphic analyses over a portion of south Melas Chasma, Mars. The Discrete Ordinate Radiative Transfer (DISORT) model is used to retrieve atmospherically corrected single scattering albedos from CRISM I/F data for mineral identification. A sequence of interbedded poly- and monohydrated sulfates associated with interior layered deposits (ILDs) is identified and mapped. Analyses from laboratory experiments and spectral unmixing of CRISM hyperspectral data support the hypothesis of precipitation and dehydration of multiple inputs of complex Mg-Ca-Fe-SO4-Cl brines. In this scenario, the early precipitated Mg sulfates could dehydrate into monohydrated sulfate due to catalytic effects, and the later-precipitated Mg sulfates from the late-stage "clean" brine could terminate their dehydration at mid-degree of hydration to form a polyhydrated sulfate layer due to depletion of the catalytic species (e.g., Ca, Fe, and Cl). Distinct jarosite-bearing units are identified stratigraphically above the hydrated sulfate deposits. These are hypothesized to have formed either by oxidation of a fluid containing Fe(II) and SO4, or by leaching of soluble phases from precursor intermixed jarosite-Mg sulfate units that may have formed during the later stages of deposition of the hydrated sulfate sequence. Results from stratigraphic analysis of the ILDs show that the layers have a consistent northward dip towards the interior of the Melas Chasma basin, a mean dip angle of ∼6°, and neighboring strata that are approximately parallel. These strata are interpreted as initially sub-horizontal layers of a subaqueous, sedimentary evaporite deposits that underwent post-depositional tilting from slumping into the Melas Chasma basin. The interbedded hydrated sulfate units and jarosite-bearing units, which have distinct stratigraphic relationships, are indicative of a complex sedimentary and aqueous history in south Melas Chasma.

Structure, stratigraphy, and hydrocarbons offshore southern Kalimantan, Indonesia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bishop, W.F.

1980-01-01

Offshore southern Kalimantan (Borneo), Indonesia, the Sunda Shelf is bounded on the south by the east-west-trending Java-Madura foreland basin and on the north by outcrops of the granitic core of Kalimantan. Major northeast-southwest-trending faults created a basin and ridge province which controlled sedimentation at least until early Miocene time. Just above the unconformity, the oldest pre-CD Limestone clastic strata are fluviatile and lacustrine, the remainder consisting largely of shallow-marine, calcareous shale with interbeds of fine-grained, quartzose sandstone. A flood of terrigenous detritus - Kudjung unit 3 - resulted from post-CD Limestone uplift, and is more widely distributed. Unit 3 consistsmore » largely of fluviatile sandstone interbedded with shale and mudstone, grading upward to marine clastics with a few thin limestones near the top. The resulting Kudjing unit 2 is largely a shallow-basinal deposit, comprising thin, micritic limestones interbedded with calcareous shale and mudstone. Infilling of the basins was nearly complete by the end of Kudjing unit 1 deposition. Eastern equivalents of Kudjing units 1 and 2 are known as the Berai limestone interval (comprising bank, reefal, basinal, and open-marine limestones, and marl). Of the three oil fields in the area, two are shut in, but one has produced nearly 100 million bbl. Gas shows were recorded in most wells of the area, but the maximum flow was 1.8 MMcf methane/day, although larger flows with high percentages of carbon dioxide and nitrogen were reported. Fine-grained clastic strata of unit 3 are continuous with those farther south, where geochemical data indicate good source and hydrocarbon-generating potential. Sandstones with reservoir capability are present in the clastic intervals, and several carbonate facies have sporadically developed porosity. A variety of structural and stratigraphic traps is present. 20 figures, 1 table.« less

Paleo-environmental interpretation of Paleocene Sepultura Formation in type locality, Mesa La sepultura, Baja California, Mexico

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arzate-Hernandez, L.; Tellezduarte, M.

1988-03-01

The Sepultura Formation in its type locality consists of two major lithostratigraphic units. The basal A unit overlies the Cretaceous Rosario Formation. It consists predominantly of fine-grained, poorly consolidated sandstones; some conglomerates; and thin beds of well-consolidated lenticular fossiliferous sandstones, which show some cyclic sedimentation. The poorly consolidated sandstones contain glauconitic layers; abundant shark teeth, benthic forams, and ostracods; and sparse mollusks, brachiopods, and Ophiomorpha-like trace fossils. These faunas indicate deposition in nearshore shallow waters. The interbedded consolidated lenticular sandstones probably indicate storm-induced deposition below wave base. This mechanism is assumed to be responsible for the high concentration of fossilsmore » consisting predominantly of unworn molluscan shells, scaphopods, echinoid spines, corals, and forams. In places, the elongated shells of Turritella pachecoensis show a preferential orientation to the southwest. At the top of the unit, a poorly fossiliferous red conglomerate indicates deltaic conditions. Overlying the conglomerate is unit B which shows a change in the sedimentary environment. It consists of a calcareous shallowing upward sequence of nodular to massive algal limestone with caliche at top. The microfossils of this unit show glauconitization in places, and consist, in addition to algal fragments, of forams, microscopic mollusks, and some ostracods and calcispherules from shallow waters (less than 30 m deep).« less

Leachate migration from an in-situ oil-shale retort near Rock Springs, Wyoming

USGS Publications Warehouse

Glover, Kent C.

1988-01-01

Hydrogeologic factors influencing leachate movement from an in-situ oil-shale retort near Rock Springs, Wyoming, were investigated through models of ground-water flow and solute transport. Leachate, indicated by the conservative ion thiocyanate, has been observed ? mile downgradient from the retort. The contaminated aquifer is part of the Green River Formation and consists of thin, permeable layers of tuff and sandstone interbedded with oil shale. Most solute migration has occurred in an 8-foot sandstone at the top of the aquifer. Ground-water flow in the study area is complexly three dimensional and is characterized by large vertical variations in hydraulic head. The solute-transport model was used to predict the concentration of thiocyanate at a point where ground water discharges to the land surface. Leachate with peak concentrations of thiocyanate--45 milligrams per liter or approximately one-half the initial concentration of retort water--was estimated to reach the discharge area during January 1985. This report describes many of th3 advantages, as well as the problems, of site-specific studies. Data such as the distribution of thin, permeable beds or fractures might introduce an unmanageable degree of complexity to basin-wide studies but can be incorporated readily into site-specific models. Solute migration in the study area occurs primarily in thin, permeable beds rather than in oil-shale strata. Because of this behavior, leachate traveled far greater distances than might otherwise have been expected. The detail possible in site-specific models permits more accurate prediction of solute transport than is possible with basin-wide models. A major problem in site-specific studies is identifying model boundaries that permit the accurate estimation of aquifer properties. If the quantity of water flowing through a study area cannot be determined prior to modeling, the hydraulic conductivity and ground-water velocity will be poorly estimated.

Leachate migration from an in situ oil-shale retort near Rock Springs, Wyoming

USGS Publications Warehouse

Glover, K.C.

1986-01-01

Geohydrologic factors influencing leachate movement from an in situ oil shale retort near Rock Springs, Wyoming, were investigated by developing models of groundwater flow and solute transport. Leachate, indicated by the conservative ion thiocyanate, has been observed 1/2 mi downgradient from the retort. The contaminated aquifer is part of the Green River Formation and consists of thin, permeable layers of tuff and sandstone interbedded with oil shale. Most solute migration has occurred in an 8-ft sandstone at the top of the aquifer. Groundwater flow in the study area is complexly 3-D and is characterized by large vertical variations in hydraulic head. The solute transport model was used to predict the concentration of thiocyanate at a point where groundwater discharges to the land surface. Leachates with peak concentrations of thiocyanate--45 mg/L or approximately one-half the initial concentration of retort water--were estimated to reach the discharge area during January 1985. Advantages as well as the problems of site specific studies are described. Data such as the distribution of thin permeable beds or fractures may introduce an unmanageable degree of complexity to basin-wide studies but can be incorporated readily in site specific models. Solute migration in the study area primarily occurs in thin permeable beds rather than in oil shale strata. Because of this behavior, leachate traveled far greater distances than might otherwise have been expected. The detail possible in site specific models permits more accurate prediction of solute transport than is possible with basin-wide models. A major problem in site specific studies is identifying model boundaries that permit the accurate estimation of aquifer properties. If the quantity of water flowing through a study area cannot be determined prior to modeling, the hydraulic conductivity and groundwater velocity will be estimated poorly. (Author 's abstract)

Martian Polar Caps: Folding, Faulting, Flowing Glaciers of Multiple Interbedded Ices

NASA Astrophysics Data System (ADS)

Kargel, J. S.

2001-12-01

The Martian south polar cap (permanent CO2 cap and polar layered deposits), exhibit abundant, varied, and widespread deformational phenomena. Folding and boudinage are very common. Strike-slip or normal faults are rarer. Common in the vicinity of major troughs and scarps are signs of convergent flow tectonics manifested as wrinkle-ridge-like surface folds, thrust faults, and viscous forebulges with thin-skinned extensional crevasses and wrinkle-ridge folds. Such flow convergence is predicted by theory. Boudinage and folding at the 300-m wavelength scale, indicating rheologically contrasting materials, is widely exposed at deep levels along erosional scarps. Independent morphologic evidence indicates south polar materials of contrasting volatility. Hence, the south polar cap appears to be a multiphase structure of interbedded ices. The north polar cap locally also exhibits flow indicators, though they are neither as common nor as varied as in the south. The large-scale quasi-spiral structure of the polar caps could be a manifestation of large-scale boudinage. According to this scenario, deep-level boudinage continuously originates under the glacial divide (the polar cap summit). Rod-like boudin structures are oriented transverse to flow and migrate outward with the large-scale flow field. Troughs develop over areas between major boudins. A dynamic competition, and possibly a rough balance, develops between the local flow field in the vicinity of a trough (which tends to close the trough by lateral closure and upwelling flow) and sublimation erosion (which tends to widen and deepen them). Over time, the troughs flow to the margins of the polar cap where they, along with other polar structures, are destroyed by sublimation. Major ice types contributing to rheological and volatility layering may include, in order of highest to lowest mechanical strength, CO2 clathrate hydrate, water ice containing inert/insoluble dust, pure water ice, water ice containing traces of liquid-soluble salts, water ice containing traces of solid-soluble acids, CO2 ice. This is also nearly the same sequence of highest to lowest melting/dissociation points, but it is different than the sequence of volatility. This geologic-structural interpretation and specific chemical models are amenable to testing by computational means and point the way toward future needed observations, including complete high-resolution imaging of the polar caps, measurement of flow fields (possibly by laser interferometry), mapping of subsurface structures (by radar and/or seismic methods), and determination of composition (by penetrators, drillers, or borers). New lab data are needed on the physical properties of candidate ices.

System for analysis of explosives

DOEpatents

Haas, Jeffrey S [San Ramon, CA

2010-06-29

A system for analysis of explosives. Samples are spotted on a thin layer chromatography plate. Multi-component explosives standards are spotted on the thin layer chromatography plate. The thin layer chromatography plate is dipped in a solvent mixture and chromatography is allowed to proceed. The thin layer chromatography plate is dipped in reagent 1. The thin layer chromatography plate is heated. The thin layer chromatography plate is dipped in reagent 2.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Thin-layer chromatography system for clinical use... Instruments § 862.2270 Thin-layer chromatography system for clinical use. (a) Identification. A thin-layer... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert...

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Triboelectric generator

DOEpatents

Wang, Zhong L; Fan, Fengru; Lin, Long; Zhu, Guang; Pan, Caofeng; Zhou, Yusheng

2015-11-03

A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Constraints on the Lithospheric Strength at Volcanic Rifted Margins from the Geometry of Seaward Dipping Reflectors Using Analytic and Numerical Models

NASA Astrophysics Data System (ADS)

Tian, X.; Buck, W. R.

2017-12-01

Seaward dipping reflectors (SDRs) are found at many rifted margins. Drilling indicates SDRs are interbedded layers of basalts and sediments. Multi-channel seismic reflection data show SDRs with various width (2 100 km), thickness (1 15 km) and dip angles (0 30). Recent studies use analytic thin plate models (AtPM) to describe plate deflections under volcanic loads. They reproduce a wide range of SDRs structures without detachment faulting. These models assume that the solidified dikes provide downward loads at the rifting center. Meanwhile, erupted lava flows and sediments fill in the flexural depression and further load the lithosphere. Because the strength of the lithosphere controls the amount and wavelength of bending, the geometries of SDRs provide a window into the strength of the lithosphere during continental rifting. We attempt to provide a quantitative mapping between the SDR geometry and the lithospheric strength and thickness during rifting. To do this, we first derive analytic solutions to two observables that are functions of effective elastic thickness (Te). One observable (Xf) is the horizontal distance for SDRs to evolve from flat layers to the maximum bent layers. Another observable is the ratio between the thickness and the tangent of the maximum slope of SDRs at Xf. We then extend the AtPM to numerical thin plate models (NtPM) with spatially restricted lava flows. AtPM and NtPM show a stable and small relative difference in terms of the two observables with different values of Te. This provides a mapping of Te between NtPM and AtPM models. We also employ a fully two-dimensional thermal-mechanical treatment with elasto-visco-plastic rheology to simulate SDRs formation. These models show that brittle yielding due to bending can reduce the Te of the lithosphere by as much as 50% of the actual brittle lithospheric thickness. Quantification of effects of plastic deformation on bending allow us to use Te to link SDRs geometries to brittle lithospheric thickness. From published seismic reflection data, we obtain a global map of Te at volcanic rifted margins that ranges from 2 12 km using the AtPM and NtPM mapping. The corresponding brittle lithospheric thickness ranges from 6 20 km. In addition, preliminary results show Te increases along a given margin with distance away from a Large Igneous Province.

Geological Evidence of Predecessors to the 2010 Earthquake and Tsunami in South-Central Chile

NASA Astrophysics Data System (ADS)

Ely, L. L.; Cisternas, M.; Wesson, R. L.; Lagos, M.

2010-12-01

On February 27, 2010 a great M 8.8 earthquake and accompanying tsunami struck the region between Constitución and Concepción in south-central Chile. In the year immediately preceding this event, we described and surveyed deposits from previous tsunamis at several sites in the Concepción region (36.5°-38.5° S. Lat). This research positioned us to document the geomorphic and tectonic effects of the 2010 earthquake and tsunami. Following the 2010 earthquake we quantified the inundation, inland extent, erosion and deposition of the 2010 tsunami at our study sites and compared with those of previous tsunamis. The 2010 tsunami deposits were also utilized to guide the search for repositories where stratigraphic records of multiple paleotsunami deposits are likely to be preserved. The characteristic of the 2010 tsunami were similar to those reported after the penultimate earthquake in the Concepción region, which occurred in 1835. A sand sheet from the 2010 tsunami blanketed sites at Tirua (38.5° S. Lat) and the Andalien River, (36.7° S. Lat), where we had identified preexisting anomalous, laterally-continuous sand sheets that thin landward and are interbedded with coastal marsh deposits. The great similarity between these and the 2010 tsunami sands substantiated our interpretation that they were also left by previous tsunamis. At the Tirua River estuary, the 2010 tsunami sand sheet is underlain by at least three earlier tsunami deposits. This site lies at the boundary between the northern end of the rupture zone from the M 9.5 earthquake in 1960 and the southernmost reports of the 1835 and 2010 tsunamis. Prominent, laterally-continuous bands of these tsunami sands are interbedded with silty peats along the bank of the Tirua River, 0.8 to 1.8 km inland from the coast. Based on buried historic artifacts and testimonies of local survivors, the youngest pre-2010 sand sheet was deposited by the 1960 tsunami. Preliminary radiocarbon and OSL ages on the lower two sand layers show temporal overlap with the 1835 earthquake to the north and a large earthquake in southern Chile in AD 1575, which previous research indicates was similar in character and latitudinal extent to the 1960 earthquake. The stratigraphic units dividing the four sand layers repeatedly exhibit a pattern of a basal brownish silty peat that grades upwards to grayish less organic silt and a sharp contact with the next overlying sand layer. We interpret this pattern as possible evidence of coseismic uplift out of the tidal zone, followed by interseismic subsidence. By virtue of its marginal location between historic earthquake rupture zones, the site at Tirua could selectively preserve evidence of the largest earthquakes and tsunamis produced in the 1960 rupture area to the south and the 2010 rupture area to the north.

Mixed-layer kaolinite-montmorillonite from the Yucatan Peninsula, Mexico

USGS Publications Warehouse

Schultz, L.G.; Shepard, A.O.; Blackmon, P.D.; Starkey, H.C.

1971-01-01

Clay beds 1–2 m thick and interbedded with marine limestones probably of early Eocene age are composed of nearly pure mixed-layer kaolinite-montmorillonite. Particle size studies, electron micrographs, X-ray diffraction studies, chemical analyses, cation exchange experiments, DTA, and TGA indicate that clays from three different localities contain roughly equal proportions of randomly interlayered kaolinite and montmorillonite layers. The montmorillonite structural formulas average K0·2Na0·2Ca0·2Mg0·2(Al2·5Fe1·03+Mg0·5)(Al0·75Si7.25)O20+(OH)4−, with a deficiency of structural (OH) in either the montmorillonite or kaolinite layers. Nonexchangeable K+ indicates that a few layers are mica-like. Crystals are mostly round plates 1/10 to 1/20 µ across. The feature most diagnostic of the mixed-layer character is an X-ray reflection near 8 Å after heating at 300°C. The clays are inferred to have developed by weathering of volcanic ash and subsequent erosion and deposition in protected nearshore basins.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Patch testing with thin-layer chromatograms of chamomile tea in patients allergic to sesquiterpene lactones.

PubMed

Lundh, Kerstin; Gruvberger, Birgitta; Möller, Halvor; Persson, Lena; Hindsén, Monica; Zimerson, Erik; Svensson, Ake; Bruze, Magnus

2007-10-01

Patients with contact allergy to sesquiterpene lactones (SLs) are usually hypersensitive to Asteraceae plant products such as herbal teas. The objective of this study was to show sensitizers in chamomile tea by patch testing with thin-layer chromatograms. Tea made from German chamomile was separated by thin-layer chromatography. Strips of the thin-layer chromatograms were used for patch testing SL-positive patients. 15 (43%) of 35 patients tested positively to 1 or more spots on the thin-layer chromatogram, with many individual reaction patterns. Patch testing with thin-layer chromatograms of German chamomile tea showed the presence of several allergens.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Radiometric Dating of Folds: A new approach to determine the timing of deformation at shallow-crustal conditions, with examples from the Mexican Fold-Thrust Belt

NASA Astrophysics Data System (ADS)

Fitz Diaz, E.; van der Pluijm, B. A.

2012-12-01

We are developing a robust method to obtain absolute ages of folds that were formed at shallow crustal conditions. The method takes advantage of illite neocrystallization in folded, clay-bearing layers and the ability to obtain accurate retention and total gas ages from small size fractions using encapsulated Ar analysis, analogous to prior work on fault gouge dating. We illustrate our approach in folded Cretaceous shale-bentonitic layers that are interbedded with carbonates of the Zimapán and the Tampico-Misantla cretaceous basins in central-eastern Mexico. Basinal carbonates were buried by syntectonic turbidites and inverted during the formation of the Mexican Fold-Thrust in the Late Cretaceous. Results were obtained from four chevron folds that are representative of different stages of deformation, burial/temperature conditions and location within this thin-skinned orogenic wedge: two from the Zimapán Basin (Folds 1 and 2) in the west and two from the Tampico-Misantla Basin (Folds 3 and 4) in the east. Mineralogic compositions and variations in illite-polytypes, crystallite-size (CS) and Ar/Ar ages were obtained from size fractions in limbs and hinges of folded layers. Ar retention ages produce a folding age of ~81 Ma for Fold 1 and ~69 Ma for Fold 2, which are fully consistent with stratigraphic limits from syn-orogenic turbidities and observed overprinting events in the Mexican Fold-Thrust Belt. The total gas age of Fold 3, on the easternmost margin of the Tampico-Misantla Basin is similar to that of Fold 2, indicating that the second event is regional in scale. In addition to presenting a new, reliable method to constrain the timing of local deformation, we interpret folding and associated clay neo-mineralization in terms of the regional burial history, and localization and propagation of deformation within a heterogeneous orogenic wedge involving progressive deformation of two basins separated by a platform block.

A mechanical model for complex fault patterns induced by fluid overpressures due to dehydration reaction within evaporitic rocks

NASA Astrophysics Data System (ADS)

de Paola, N.; Collettini, C.; Trippetta, F.; Barchi, M. R.; Minelli, G.

2006-12-01

Complex fault patterns, i.e. faults which exhibit a diverse range of strikes, may develop under a weak/absent regional tectonic field (e.g. polygonal faults). We studied a complex synsedimentary fault pattern, geometrically similar to polygonal fault systems, developed during an early Jurassic faulting episode and exposed in the Umbria-Marche Apennines (Italy). Along the passive margin of the African plate, these faults disrupt the Early Jurassic platform overlying the Triassic Evaporites, and bound the subsiding basins where a pelagic succession was successively deposited. We digitised the fault pattern at the regional scale on the grounds of the available geological maps, characterising each fault in terms of attitude, length and throw (i.e. vertical displacement). Fault statistical analysis shows a largely scattered orientation, a high grade of fragmentation, an average length of about 10 km and a constant length/displacement ratio. The measured stratigraphic throw ranges from 300 m to 700 m leading to very low long-term fault slip rates (less than 0.1 mm/yr). We propose a mechanical model where Jurassic faulting has been strongly influenced by the onset of dehydration of the Triassic Evaporites, made of interbedded gypsum layers and dolostones. Dehydration, i.e. anhydritization of the gypsum rich layers, initiated during burial at 1000 m of depth. During initial phases of dehydration increasing fluid pressures trapped at the gypsum-dolostones interface, promote hydrofracturing and faulting within the dolostone layers and subsequent fluid release. Fluid expulsion produces volume contraction of the dehydrating rocks causing vertical thinning and horizontal isotropic extension. This state of non-plane strain is accommodated within the composite gypsum-dolostones sequence by a mix of ductile (flowage and boudinage) and brittle (hydrofracturing and faulting) deformation processes. The stress field caused by the former processes, consistent with an almost isotropic stress distribution within the horizontal plane, explains well the studied complex fault pattern and seems to be dominant over the far-field regional extensional tectonics.

Mineralogy and stratigraphy of the Gale crater rim, wall, and floor units

NASA Astrophysics Data System (ADS)

Buz, Jennifer; Ehlmann, Bethany L.; Pan, Lu; Grotzinger, John P.

2017-05-01

The Curiosity rover has detected diverse lithologies in float rocks and sedimentary units on the Gale crater floor, interpreted to have been transported from the rim. To understand their provenance, we examine the mineralogy and geology of Gale's rim, walls, and floor, using high-resolution imagery and infrared spectra. While no significant differences in bedrock spectral properties were observed within most Thermal Emission Imaging System and Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) scenes, some CRISM scenes of rim and wall rocks showed olivine-bearing bedrock accompanied by Fe/Mg phyllosilicates. Hydrated materials with 2.48 μm absorptions in Gale's eastern walls are spectrally similar to the sulfate unit in Mount Sharp (Aeolis Mons). Sedimentary strata on the Gale floor southwest of the landing site, likely coeval with the Bradbury units explored by Curiosity, also are hydrated and/or have Fe/Mg phyllosilicates. Spectral properties of these phyllosilicates differ from the Al-substituted nontronite detected by CRISM in Mount Sharp, suggesting formation by fluids of different composition. Geologic mapping of the crater floor shows that the hydrated or hydroxylated materials are typically overlain by spectrally undistinctive, erosionally resistant, cliff-forming units. Additionally, a 4 km impact crater exposes >250 m of the Gale floor, including finely layered units. No basement rocks are exposed, thus indicating sedimentary deposits ≥250 m beneath strata studied by Curiosity. Collectively, the data indicate substantial sedimentary infill of Gale crater, including some materials derived from the crater rim. Lowermost thin layers are consistent with deposition in a lacustrine environment; interbedded hydrated/hydroxylated units may signify changing environmental conditions, perhaps in a drying or episodically dry lake bed.

Lithostratigraphy, provenance and facies distribution of Archaean cratonic successions in western Kenya

NASA Astrophysics Data System (ADS)

Ngecu, Wilson M.; Gaciri, Steve J.

1995-10-01

The greenstone belt of the Tanzanian shield in Western Kenya is composed of two supracrustal successions, which form the Nyanzian and Kavirondian Groups. The Nyanzian Group at the base is composed of mafic tholeiitic basalts, calc-alkaline dacites and rhyolites. The group is unconformably overlain by the Kavirondian Group. During recent field mapping, the Kavirondian Group was divided into three formations. The Shivakala Formation consists of thickly bedded basal conglomerates, which are interbedded with thin sandstone beds. The Igukhu Formation conformably overlies the Shivakala Formation and is composed of thickly and locally thinly bedded greywacke. The uppermost Mudaa Formation is composed of blocky mudstones and thinly laminated shales. A high proportion of volcanic, granitic and chert pebbles in the conglomerates, along with abundant quartz, feldspars and mudstone fragments in the greywacke, indicates a mixed provenance of volcanic, granitic and recycled sedimentary rocks. Primary sedimentary structures and lithofacies associations indicate that the conglomerates were deposited in an alluvial fan/fan-delta setting. The greywackes represent proximal turbidites while the mudstone and shales were deposited mainly as distal turbidites. In the study area there is no evidence of transitional nearshore or shallow marine facies transitional to the continental and deep marine facies.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Fluvial sandstone reservoirs of Travis Peak (Hosston) Formation, east Texas basin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tye, R.S.

1989-03-01

Gas production (7.2 billion ft/sup 3/) from low-permeability sandstones in the Travis Peak Formation, North Appleby field, Nacogdoches County, Texas, is enhanced through massive hydraulic fracturing of stacked sandstones that occur at depths between 8000 and 10,000 ft. stratigraphic reservoirs were formed in multilateral tabular sandstones owing to impermeable mudstone interbeds that encase blocky to upward-fining sandstones. Pervasive quartz cement in the sandstones decreases porosity and permeability and augments the reservoir seal. Subsurface data indicate that much of this 2000-ft thick section represents aggradation of alluvial-valley deposits. Multiple channel belts form a network of overlapping, broad, tabular sandstones having thickness-to-widthmore » ratios of 1:850 (8-44 ft thick; widths exceed 4-5 mi). Six to eight channel belts, each containing 80-90% medium to fine-grained sandstone, can occupy a 200-ft thick interval. In a vertical sequence through one channel belt sandstone, basal planar cross-bedding grades upward into thinly interbedded sets of planar cross-beds and ripple cross-lamination. Clay-clast conglomerates line scoured channel bases. Adjacent to the channels, interbedded mudstones accumulated in well-drained swamps and lakes. Poorly sorted sandstones represent overbank deposition (crevasse splays and lacustrine deltas). During Travis Peak deposition, fluvial styles evolved from dominantly braided systems near the base of the formation to more mud-rich, meandering systems at the top.« less

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

Reser­voir anisotropy and facies stratigraphic framework in the Pale­ocene Fort Union Formation, western Wind River basin

USGS Publications Warehouse

Flores, R.M.; Keighin, C.W.

1993-01-01

Investigation of reservoir anisotropy and lithofacies stratigraphic framework in the Fort Union Formation in western Wind River Basin, Wyoming focused on excellent surface exposures in the Shotgun Butte, Eagle Point, and Shotgun Bench synclines, and in the Merriam anticline area of the Wind River Reservation (Fig. 1). A complementary study was made of the formation in the Muddy Ridge and Pavillion gas fields, 8-10 mi to the southeast (Fig. 2). The Fort Union Formation is as much as 4000 ft thick in these areas, but thins to approximately 1800 ft toward the northern flank of the Little Dome anticline 3 mi south of Merriam anticline (Keefer and Troyer, 1964). The Fort Union Formation includes interbedded conglomerates, sandstones, siltstones, mudstones, coals, and carbonaceous shales (Fig. 3). The lower member of the Fort Union Formation is dominated by conglomerates and sandstones. The overlying Shotgun Member of the Fort Union Formation mainly consists of siltstones, mudstones, and carbonaceous shales, and coals, and subordinate sandstones. Contact between the lower member and Shotgun Member is gradational and marked by a topographic change from the resistant conglomerates and sandstones of the lower member to less resistant fine-grained strata of the Shotgun Member. In addition, the Shotgun Member commonly contains coal and carbonaceous shale beds, both in the surface and subsurface (Fig. 4). About 15-20 mi east of the study area the Waltman Shale Member of the Fort Union Formation pinches out at the contact between the lower member and Shotgun Member (Keefer and Johnson, this volume). The Waltman Shale Member, which consists of brown to gray silty and shaly claystones interbedded with sandstones, increases in thickness to as much as 3000 ft eastward into the basin center (Keefer, 1961; 1965). Thus, eastward, the Paleocene Fort Union Formation in ascending order, contains the lower member, Waltman Shale Member, and Shotgun Member. The Shotgun Member generally thins and interfingers with the Waltman Member.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Multi-layered, chemically bonded lithium-ion and lithium/air batteries

DOEpatents

Narula, Chaitanya Kumar; Nanda, Jagjit; Bischoff, Brian L; Bhave, Ramesh R

2014-05-13

Disclosed are multilayer, porous, thin-layered lithium-ion batteries that include an inorganic separator as a thin layer that is chemically bonded to surfaces of positive and negative electrode layers. Thus, in such disclosed lithium-ion batteries, the electrodes and separator are made to form non-discrete (i.e., integral) thin layers. Also disclosed are methods of fabricating integrally connected, thin, multilayer lithium batteries including lithium-ion and lithium/air batteries.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Comparison Between Navier-Stokes and Thin-Layer Computations for Separated Supersonic Flow

NASA Technical Reports Server (NTRS)

Degani, David; Steger, Joseph L.

1983-01-01

In the numerical simulation of high Reynolds-number flow, one can frequently supply only enough grid points to resolve the viscous terms in a thin layer. As a consequence, a body-or stream-aligned coordinate system is frequently used and viscous terms in this direction are discarded. It is argued that these terms cannot be resolved and computational efficiency is gained by their neglect. Dropping the streamwise viscous terms in this manner has been termed the thin-layer approximation. The thin-layer concept is an old one, and similar viscous terms are dropped, for example, in parabolized Navier-Stokes schemes. However, such schemes also make additional assumptions so that the equations can be marched in space, and such a restriction is not usually imposed on a thin-layer model. The thin-layer approximation can be justified in much the same way as the boundary-layer approximation; it requires, therefore, a body-or stream-aligned coordinate and a high Reynolds number. Unlike the boundary-layer approximation, the same equations are used throughout, so there is no matching problem. Furthermore, the normal momentum equation is not simplified and the convection terms are not one-sided differenced for marching. Consequently, the thin-layer equations are numerically well behaved at separation and require no special treatment there. Nevertheless, the thin-layer approximation receives criticism. It has been suggested that the approximation is invalid at separation and, more recently, that it is inadequate for unsteady transonic flow. Although previous comparisons between the thin-layer and Navier-Stokes equations have been made, these comparisons have not been adequately documented.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Numerical and Statistical Analysis of Fractures in Mechanically Dissimilar Rocks of Limestone Interbedded with Shale from Nash Point in Bristol Channel, South Wales, UK.

NASA Astrophysics Data System (ADS)

Adeoye-Akinde, K.; Gudmundsson, A.

2017-12-01

Heterogeneity and anisotropy, especially with layered strata within the same reservoir, makes the geometry and permeability of an in-situ fracture network challenging to forecast. This study looks at outcrops analogous to reservoir rocks for a better understanding of in-situ fracture networks and permeability, especially fracture formation, propagation, and arrest/deflection. Here, fracture geometry (e.g. length and aperture) from interbedded limestone and shale is combined with statistical and numerical modelling (using the Finite Element Method) to better forecast fracture network properties and permeability. The main aim is to bridge the gap between fracture data obtained at the core level (cm-scale) and at the seismic level (km-scale). Analysis has been made of geometric properties of over 250 fractures from the blue Lias in Nash Point, UK. As fractures propagate, energy is required to keep them going, and according to the laws of thermodynamics, this energy can be linked to entropy. As fractures grow, entropy increases, therefore, the result shows a strong linear correlation between entropy and the scaling exponent of fracture length and aperture-size distributions. Modelling is used to numerically simulate the stress/fracture behaviour in mechanically dissimilar rocks. Results show that the maximum principal compressive stress orientation changes in the host rock as the fracture-induced stress tip moves towards a more compliant (shale) layer. This behaviour can be related to the three mechanisms of fracture arrest/deflection at an interface, namely: elastic mismatch, stress barrier and Cook-Gordon debonding. Tensile stress concentrates at the contact between the stratigraphic layers, ahead of and around the propagating fracture. However, as shale stiffens with time, the stresses concentrated at the contact start to dissipate into it. This can happen in nature through diagenesis, and with greater depth of burial. This study also investigates how induced fractures propagate and interact with existing discontinuities in layered rocks using analogue modelling. Further work will introduce the Maximum Entropy Method for more accurate statistical modelling. This method is mainly useful to forecast likely fracture-size probability distributions from incomplete subsurface information.

The Alleret Maar lacustrine sequence (French Massif Central): a 150 ka long early-middle Pleistocene continental paleoenvironmental record.

NASA Astrophysics Data System (ADS)

Nomade, S.; Pastre, J.; Guillou, H.; Gauthier, A.; Scaillet, S.

2008-12-01

Lacustrine maar sequences of the French Massif Central are of great interest for paleoclimatic and paleoenvironmental reconstructions of mid-latitudes Quaternary continental environments. In particular, the western Velay region yields exceptional sequences spanning the last 450 ka (Reille et al., J. Quat. Sci. 2000). However, older sequences remain largely unknown despite the presence of interbedded alkaline tephras allowing precise absolute radiochronological control of many lacustrine squences. The Alleret maar is a 1500 m wide phreatomagmatic crater that provides a long lacustrine sequence (41 m). The upper part of this sequence (AL2 core, 14.6 m) was studied between 2005 and 2006 (Pastre et al., C. R. Acad Sci, 2007). A 39Ar/40Ar date (557 ± 5ka) obtained from an interbedded tephra layer located at 7m as well as the associated pollen data attribute the beginning of this sequence to the MIS 15. Thanks to the AL3 core recovered in 2005 (40.6 m, CNRS Meudon) several new tephra layers were discovered in the bottom part of this lacustrine sequence. Three new 39Ar/40Ar ages (single crystal analyses) from trachytic tephra layers were obtained at the LSCE Argon Laboratory (France). These layers are located at -30.2, -36.2 and -39.2m. Ages obtained relative to the ACR-2 flux standard (1,201Ma, Kuiper et al., Science, 2008) range from 692 ± 6 ka (MSWD: 2.3, n=18) for the youngest (-30.2m) to 726 ± 9Ka Ka (MSWD: 2.2, n=12) for the lowest tephra located at -39.2m. These new dates indicate a relatively homogeneous deposition rate of 3.5cm/ka and that the last 10 meters cover the MIS 17-MIS18 period. According to these current radiochronological data the complete lacustrine sequence last more than 150ka. Ongoing sedimentary and pollen studies will allow to extend the paleoenvironmental and paleoclimatic records of the French Massif Central towards the beginning of the early middle Pleistocene.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

ERIC Educational Resources Information Center

DeAngelis, Thomas P.; Heineman, William R.

1976-01-01

Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

The threshold strength of laminar ceramics utilizing molar volume changes and porosity

NASA Astrophysics Data System (ADS)

Pontin, Michael Gene

It has been shown that uniformly spaced thin compressive layers within a ceramic body can arrest the propagation of an otherwise catastrophic crack, producing a threshold strength: a strength below which the probability of failure is zero. Previous work has shown that the threshold strength increases with both the magnitude of the compressive stress and the fracture toughness of the thin layer material, and finite element analysis predicts that the threshold strength can be further increased when the elastic modulus of the compressive layer is much smaller than the thicker layer. The current work describes several new approaches to increase the threshold strength of a laminar ceramic system. The initial method utilized a molar volume expansion within the thin layers, produced by the tetragonal-to-monoclinic phase transformation of unstabilized zirconia during cooling, in order to produce large compressive stresses within the thin layers. High threshold strengths were measured for this system, but they remained relatively constant as the zirconia content was increased. It was determined that microcracking produced during the transformation reduced the magnitude of the compressive stresses, but may also have served to reduce the modulus of the thin compressive layer, providing an additional strengthening mechanism. The second approach studied the addition of porosity to reduce the elastic modulus of the thin compressive layers. A new processing method was created and analyzed, in which thick layers of the laminate were fabricated by tape-casting, and then dip-coated into a slurry, containing rice starch, to create thin porous compressive layers upon densification. The effects of porosity on the residual compressive stress, elastic modulus, and fracture toughness of the thin layers were measured and calculated, and it was found that the elastic modulus mismatch between the thin and thick layers produced a large strengthening effect for volume fractions of porosity below a critical level. Specimens with greater volume fractions of porosity exhibited complete crack arrest, typically followed by non-catastrophic failure, as cracks initiating in adjacent thick layers coalesced by cracking or delamination along the thin porous layers.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

A model for thin layer formation by delayed particle settling at sharp density gradients

NASA Astrophysics Data System (ADS)

Prairie, Jennifer C.; White, Brian L.

2017-02-01

Thin layers - regions where plankton or particles accumulate vertically on scales of a few meters or less - are common in coastal waters, and have important implications for both trophic dynamics and carbon cycling. These features can form by a variety of biological and physical mechanisms, including localized growth, shear-thinning, and directed swimming. An additional mechanism may result in the formation of thin layers of marine aggregates, which have been shown to decrease their settling velocity when passing through sharp density gradients, a behavior termed delayed settling. Here, we apply a simple vertical advection-diffusion model to predict the properties of aggregate thin layers formed by this process. We assume a constant vertical flux of particles from the surface, which is parameterized by observations from laboratory experiments with marine aggregates. The formation, maintenance, and shape of the layers are described in relation to non-dimensional numbers that depend on environmental conditions and particle settling properties. In particular, model results demonstrate layer intensity and sharpness both increase with higher Péclet number (Pe), that is, under conditions with weaker mixing relative to layer formation. Similarly, more intense and sharper layers are found when the delayed settling behavior of aggregates is characterized by a lower velocity minimum. The model also predicts layers that are vertically asymmetric and highly "peaky" when compared with a Gaussian distribution, features often seen in thin layers in natural environments. Lastly, by comparing model predictions with observations of thin layers in the field, we are able to gain some insight into the applicability of delayed settling as a thin layer formation mechanism in different environmental conditions.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates

PubMed Central

Yu, Yan; Jiang, Shenglin; Zhou, Wenli; Miao, Xiangshui; Zeng, Yike; Zhang, Guangzu; Liu, Sisi

2013-01-01

The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are “indirect” processes that require transfer steps. Moreover, previously reported “transfer-free” methods are only suitable for graphene and not for other few-layer 2-D thin flakes. Here, a friction based room temperature rubbing method is proposed for fabricating different types of few-layer 2-D thin flakes (graphene, hexagonal boron nitride (h-BN), molybdenum disulphide (MoS2), and tungsten disulphide (WS2)) on flexible polymer substrates. Commercial 2-D raw materials (graphite, h-BN, MoS2, and WS2) that contain thousands of atom layers were used. After several minutes, different types of few-layer 2-D thin flakes were fabricated directly on the flexible polymer substrates by rubbing procedures at room temperature and without any transfer step. These few-layer 2-D thin flakes strongly adhere to the flexible polymer substrates. This strong adhesion is beneficial for future applications. PMID:24045289

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Deep-sea fan deposition of the lower Tertiary Orca Group, eastern Prince William Sound, Alaska

USGS Publications Warehouse

Winkler, Gary R.

1976-01-01

The Orca Group is a thick, complexly deformed, sparsely fossiliferous sequence of flysch-like sedimentary and tholeiitic volcanic rocks of middle or late Paleocene age that crops out over an area of. roughly 21,000 km2 in the Prince William Sound region and the adjacent Chugach Mountains. The Orca Group also probably underlies a large part of the Gulf of Alaska Tertiary province and the continental shelf south of the outcrop belt; coextensive rocks to the southwest on Kodiak Island are called the Ghost Rocks and Sitkalidak Formations. The Orca Group was pervasively faulted, tightly folded, and metamorphosed regionally to laumontite and prehnite-pumpellyite facies prior to, and perhaps concurrently with, intrusion of early Eocene granodiorite and quartz monzonite plutons. In eastern Prince William Sound, 95% of the Orca sedimentary rocks are interbedded feldspathic and lithofeldspathic sandstone, siltstone, and mudstone turbidites. Lithic components vary widely in abundance and composition, but labile sedimentary and volcanic grains dominate. A widespread yet minor amount of the mudstone is hemipelagic or pelagic, with scattered foraminifers. Pebbly mudstone with rounded clasts of exotic lithologies and locally conglomerate with angular blocks of deformed sandstone identical to the enclosing matrix are interbedded with the turbidites. Thick and thin tabular bodies of altered tholeiitic basalt are locally and regionally conformable with the sedimentary rocks, and constitute 15-20% of Orca outcrops in eastern Prince William Sound. The basalt consists chiefly of pillowed and nonpillowed flows, but also includes minor pillow breccia, tuff, and intrusive rocks. Nonvolcanic turbidites are interbedded with the basalt; lenticular bioclastic limestone, red and green mudstone, chert, and conglomerate locally overlie the basalt, but are supplanted upward by turbidites. From west to east, basalts within the Orca Group become increasingly fragmental and amygdaloidal. Such textural changes probably indicate shallower water to the east. A radial distribution of paleocurrents and distinctive associations of turbidite facies within the sedimentary rocks suggest that the Orca Group in eastern Prince William Sound was deposited on a westward-sloping, complex deep-sea fan. Detritus was derived primarily from 'tectonized' sedimentary, volcanic, and plutonic rocks. Coeval submarine volcanism resulted in intercalation of basalt within prisms of terrigenous sediment.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Archean deep-water depositional system: interbedded and banded iron formation and clastic turbidites in the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Zentner, Danielle; Lowe, Donald

2013-04-01

The 3.23 billion year old sediments in the Barberton greenstone belt, South Africa include some of the world's oldest known deep-water deposits. Unique to this locality are turbidites interbedded with banded iron formation (BIF) and banded ferruginous chert (BFC). This unusual association may provide clues for reconstructing Archean deep-water depositional settings. For our study we examined freshly drilled core in addition to measuring ~500 m of outcrop exposures along road cuts. The stacking pattern follows an overall BIF to BFC to amalgamated turbidite succession, although isolated turbidites do occur throughout the sequence. The turbidites are predominately massive, and capped with thin, normally graded tops that include mud rip-ups, chert plates, and ripples. The lack of internal stratification and the amalgamated character suggests emplacement by surging high-density turbidity currents. Large scours and channels are absent and bedding is tabular: the flows were collapsing with little turbulence reaching the bed. In contrast, field evidence indicates the BIF and BFC most likely precipitated directly out of the water column. Preliminary interpretations indicate the deposits may be related to a pro-deltaic setting. (1) Deltaic systems can generate long-lived, high volume turbidity currents. (2) The contacts between the BIF, BFC, and turbidite successions are gradual and inter-fingered, possibly representing lateral facies relationships similar to modern pro-delta environments. (3) Putative fan delta facies, including amalgamated sandstone and conglomerate, exist stratigraphically updip of the basinal sediments.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

ERIC Educational Resources Information Center

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Gyrotactic trapping: A numerical study

NASA Astrophysics Data System (ADS)

Ghorai, S.

2016-04-01

Gyrotactic trapping is a mechanism proposed by Durham et al. ["Disruption of vertical motility by shear triggers formation of thin Phytoplankton layers," Science 323, 1067-1070 (2009)] to explain the formation of thin phytoplankton layer just below the ocean surface. This mechanism is examined numerically using a rational model based on the generalized Taylor dispersion theory. The crucial role of sedimentation speed in the thin layer formation is demonstrated. The effects of variation in different parameters on the thin layer formation are also investigated.

[High performance thin-layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

Furthering their research into the differentiation of various haemoglobins (both human and animal) with the use of thin layer chromatographic methods, the Authors have applied Kaiser's high performance thin layer chromatography (HPTLC) to the specific diagnosis of blood. Although the method was superior to ascending one-dimensional thin layer chromatography for its sensitivity, Rf reproducibility and much briefer migration times, it did not turn out to be suitable for application to the specific requirements of forensic haematology.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurhandoko, Bagus Endar B., E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com; Rock Fluid Imaging Lab., Bandung; Susilowati, E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com

2015-04-16

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied aboutmore » the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia.« less

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

A Permo-Carboniferous tide-storm interactive system: Talchir formation, Raniganj Basin, India

NASA Astrophysics Data System (ADS)

Bhattacharya, H. N.; Bhattacharya, Biplab

2006-08-01

Sandstone/siltstone-mudstone interbedded facies of the Permo-Carboniferous Talchir formation, Gondwana Supergroup, is exposed in the Raniganj Basin and records the activities of tidal currents in a terminoglacial, storm-influenced shallow marine setting. Tidal bundles of various types with pause plane drapes, evidence of time-velocity asymmetry and rare bidirectional current flow patterns are indicative of tidal activity. Chance preservation of such structures from storm reworking might have occurred due to dampening of storm waves on the low-gradient muddy substrate of the tidal flat. The tide-generated stratifications are draped by over-thickened muddy-siltstone with wavy/hummocky laminations. Increased suspended sediment concentrations following a storm yielded such thick mudstone drapes. Thin beds containing tidal structures indicate poor sediment supply in a blind tidal embayment.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

DOEpatents

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Advanced germanium layer transfer for ultra thin body on insulator structure

NASA Astrophysics Data System (ADS)

Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

2016-12-01

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Layered Organization in the Coastal Ocean: 4-D Assessment of Thin Layer Structure, Dynamics and Impacts

DTIC Science & Technology

2009-09-30

maintenance and dissipation of layers; (2) to understand the spatial coherence and spatial properties of thin layers in the coastal ocean (especially in...ORCAS profilers at K1 South and K2 had a Nortek ADV (Acoustic Doppler Velocity meter) for simultaneously measuring centimeter- scale currents and...year will be used to (1) detect the presence, intensity, thickness, temporal persistence, and spatial coherence of thin optical and acoustical layers

Preliminary view of geotechnical properties of soft rocks of Semanggol formation at Pokok Sena, Kedah

NASA Astrophysics Data System (ADS)

Ahmad, N. R.; Jamin, N. H.

2018-04-01

The research was inspired by series of geological studies on Semanggol formation found exposed at North Perak, South Kedah and North Kedah. The chert unit comprised interbedded chert-shale rocks are the main lithologies sampled in a small-scale outcrop of Pokok Sena area. Black shale materials were also observed associated with these sedimentary rocks. The well-known characteristics of shale that may swell when absorb water and leave shrinkage when dried make the formation weaker when load is applied on it. The presence of organic materials may worsen the condition apart from the other factors such as the history of geological processes and depositional environment. Thus, this research is important to find the preliminary relations of the geotechnical properties of soft rocks and the geological reasoning behind it. Series of basic soil tests and 1-D compression tests were carried out to obtain the soil parameters. The results obtained gave some preliminary insight to mechanical behaviour of these two samples. The black shale and weathered interbedded chert-shale were classified as sandy-clayey-SILT and clayey-silty-SAND respectively. The range of specific gravity of black shale and interbedded chert/shale 2.3 – 2.6 and fall in the common range of shale and chert specific gravity value. In terms of degree of plasticity, the interbedded chert/shale samples exhibit higher plastic degree compared to the black shale samples. Results from oedometer tests showed that black shale samples had higher overburden pressure (Pc) throughout its lifetime compare to weathered interbedded chert-shale, however the compression index (Cc) of black shale were 0.15 – 0.185 which was higher than that found in interbedded chert-shale. The geotechnical properties of these two samples were explained in correlation with their provenance and their history of geological processes involved which predominantly dictated the mechanical behaviour of these two samples.

Two examples of subaqueously welded ash-flow tuffs: the Visean of southern Vosges (France) and the Upper Cretaceous of northern Anatolia (Turkey)

NASA Astrophysics Data System (ADS)

Schneider, Jean-Luc; Fourquin, Claude; Paicheler, Jean-Claude

1992-02-01

Pyroclastic deposits interpreted as subaqueous ash-flow tuff have been recognized within Archean to Recent marine and lacustrine sequences. Several authors proposed a high-temperature emplacement for some of these tuffs. However, the subaqueous welding of pyroclastic deposits remains controversial. The Visean marine volcaniclastic formations of southern Vosges (France) contain several layers of rhyolitic and rhyodacitic ash-flow tuff. These deposits include, from proximal to distal settings, breccia, lapilli and fine-ash tuff. The breccia and lapilli tuff are partly welded, as indicated by the presence of fiamme, fluidal and axiolitic structures. The lapilli tuff form idealized sections with a lower, coarse and welded unit and an upper, bedded and unwelded fine-ash tuff. Sedimentary structures suggest that the fine-ash tuff units were deposited by turbidity currents. Welded breccias, interbedded in a thick submarine volcanic complex, indicate the close proximity of the volcanic source. The lapilli and fine-ash tuff are interbedded in a thick marine sequence composed of alternating sandstones and shales. Presence of a marine stenohaline fauna and sedimentary structures attest to a marine depositional environment below storm-wave base. In northern Anatolia, thick massive sequences of rhyodacitic crystal tuff are interbedded with the Upper Cretaceous marine turbidites of the Mudurnu basin. Some of these tuffs are welded. As in southern Vosges, partial welding is attested by the presence of fiamme and fluidal structures. The latter are frequent in the fresh vitric matrix. These tuff units contain a high proportion of vitroclasis, and were emplaced by ash flows. Welded tuff units are associated with non-welded crystal tuff, and contain abundant bioclasts which indicate mixing with water during flowage. At the base, basaltic breccia beds are associated with micritic beds containing a marine fauna. The welded and non-welded tuff sequences are interbedded in an alternation of limestones and marls. These limestones are rich in pelagic microfossils. The evidence above strongly suggest that in both examples, tuff beds are partly welded and were emplaced at high temperature by subaqueous ash flows in a permanent marine environment. The sources of the pyroclastic material are unknown in both cases. We propose that the ash flows were produced during submarine fissure eruptions. Such eruptions could produce non-turbulent flows which were insulated by a steam carapace before deposition and welding. The welded ash-flow tuff deposits of southern Vosges and northern Anatolia give strong evidence for existence of subaqueous welding.

A tri-layer thin film containing graphene oxide to protect zinc substrates from wear

NASA Astrophysics Data System (ADS)

Wang, Ying; Gu, Zhengpeng; Yuan, Ningyi; Chu, Fuqiang; Cheng, Guanggui; Ding, Jianning

2018-06-01

Due to its excellent properties, Zn alloy is widely used in daily life. However, the poor wear-resisting properties of Zn alloys limits their application. In this paper, a tri-layer thin film consisting of 3-aminopropyltriethoxysilane (APS), graphene oxide (GO) and perfluoropolyethers (PFPE) were successfully prepared on the surface of Zn alloy to improve the wear-resisting properties. The as-prepared tri-layer thin films were characterized by atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy and contact angle measurement. In addition, the tribological properties of the as-prepared tri-layer thin films were studied on a ball-on-plate tribometer and the morphologies of worn surfaces were observed using 3D noncontact interferometric microscope. Compared with the control samples, the tri-layer thin films showed excellent friction-reducing and wear-resisting properties, which was attributed to the synergistic effect of the GO as the load-carrying layer and the PFPE as the lubricating layer.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

PubMed Central

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-01

Dense and crack-free barium titanate (BaTiO3, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film. PMID:28787860

MultiLayer solid electrolyte for lithium thin film batteries

DOEpatents

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-02-25

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-01-01

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

PubMed

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Corrosion-resistant multilayer structures with improved reflectivity

DOEpatents

Soufli, Regina; Fernandez-Perea, Monica; Robinson, Jeff C.

2013-04-09

In one general embodiment, a thin film structure includes a substrate; a first corrosion barrier layer above the substrate; a reflective layer above the first corrosion barrier layer, wherein the reflective layer comprises at least one repeating set of sub-layers, wherein one of the sub-layers of each set of sub-layers being of a corrodible material; and a second corrosion barrier layer above the reflective layer. In another general embodiment, a system includes an optical element having a thin film structure as recited above; and an image capture or spectrometer device. In a further general embodiment, a laser according to one embodiment includes a light source and the thin film structure as recited above.

Internal hypersonic flow. [in thin shock layer

NASA Technical Reports Server (NTRS)

Lin, T. C.; Rubin, S. G.

1974-01-01

An approach for studying hypersonic internal flow with the aid of a thin-shock-layer approximation is discussed, giving attention to a comparison of thin-shock-layer results with the data obtained on the basis of the imposition theory or a finite-difference integration of the Euler equations. Relations in the case of strong interaction are considered together with questions of pressure distribution and aspects of the boundary-layer solution.

Methods for producing thin film charge selective transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Experimental and theoretical investigation of temperature effects on an interbedded betavoltaic employing epitaxial Si and bidirectional (63)Ni.

PubMed

Liu, Yunpeng; Tang, Xiaobin; Xu, Zhiheng; Hong, Liang; Chen, Da

2014-12-01

The performance of an interbedded betavoltaic employing epitaxial Si and bidirectional (63)Ni was measured and calculated at various temperatures. The experimental results indicate that the temperature dependence of the performance of interbedded betavoltaics is similar to that of monolayer betavoltaics: Voc and Pmax decrease approximately linearly with increasing temperature at low temperatures of 213.15-253.15K and decrease exponentially with increasing temperature at high temperatures of 253.15-333.15K. However, the calculation results indicate that the temperature dependences of Voc and Pmax are always linear at both high and low temperatures. Isc increases slightly with increasing temperature in both experiment and calculation. Copyright © 2014 Elsevier Ltd. All rights reserved.

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

The Characteristics of Turbidite Beds of Southwest Ryukyu Trench Floor: A new Approach From the X-ray Fluorescence Core Scanning Analysis

NASA Astrophysics Data System (ADS)

Hsiung, K. H.; Kanamatsu, T.; Ikehara, K.; Usami, K.; Saito, S.; Murayama, M.

2017-12-01

The southwest Ryukyu Trench near Taiwan is an ideal place for source-to-sink studies based on the distinctive sediment transport route between the terrestrial sediment source in Taiwan and the marine sink in the Ryukyu Trench. Using the bathymetric and seismic reflection data, we develop a sediment transport routes for understanding the ultimate sink of the southwest Ryukyu Trench floor. The southwest Ryukyu Trench floor can be regarded as the most distal depositional basin and isolated from the Ryukyu forearc basins. In addition, part of sediment from the proximal sources of the Ryukyu Islands and Yaeyama accretionary prism could be transported to the trench floor. We collected the piston core, PC04, from the southwest Ryukyu Trench floor of 6,147 m water depth in 3.23 m core length from cruise KR15-18, 2015. The coring site locates behind the natural levee of an obvious channel in the Ryukyu trench floor. The PC04 is composed of gray silty clay interbedded with numerous silt layers. Most of the silt layers are less than 2 cm in thickness. Based upon the core observation, X-ray fluorescence core scanning analysis and 14C age determinations, thirty-seven individual and thin beds were determined as turbidites. The results of X-ray fluorescence core scanning analysis provide continuous and high-resolution (1.0 mm of each point) assessment of relative change in the elemental ratios. Ca/Fe is a proxy for the terrigenous component of the sediment, indicating the High Ca and low Fe of each turbidite layers. Zr/Rb ratios of the marine sediments commonly used in the reflection of the original grain size variation. A large part of deep-sea turbidite beds are characterized by high Ca/Fe and Zr/Rb ratio values. These turbidite beds can be linked spatially over a distance of ˜200 km via submarine canyons within the Taiwan orogen. However, it is difficult to be linked temporally to certain events.

Lithofacies and seismic-reflection interpretation of temperate glacimarine sedimentation in Tarr Inlet, Glacier Bay, Alaska

USGS Publications Warehouse

Cai, J.; Powell, R.D.; Cowan, E.A.; Carlson, P.R.

1997-01-01

High-resolution seismic-reflection profiles of sediment fill within Tart Inlet of Glacier Bay, Alaska, show seismic facies changes with increasing distance from the glacial termini. Five types of seismic facies are recognized from analysis of Huntec and minisparker records, and seven lithofacies are determined from detailed sedimentologic study of gravity-, vibro- and box-cores, and bottom grab samples. Lithofacies and seismic facies associations, and fjord-floor morphology allow us to divide the fjord into three sedimentary environments: ice-proximal, iceberg-zone and ice-distal. The ice-proximal environment, characterized by a morainal-bank depositional system, can be subdivided into bank-back, bank-core and bank-front subenvironments, each of which is characterized by a different depositional subsystem. A bank-back subsystem shows chaotic seismic facies with a mounded surface, which we infer consists mainly of unsorted diamicton and poorly sorted coarse-grained sediments. A bank-core depositional subsystem is a mixture of diamicton, rubble, gravel, sand and mud. Seismic-reflection records of this subsystem are characterized by chaotic seismic facies with abundant hyperbolic diffractions and a hummocky surface. A bank-front depositional subsystem consists of mainly stratified and massive sand, and is characterized by internal hummocky facies on seismic-reflection records with significant surface relief and sediment gravity flow channels. The depositional system formed in the iceberg-zone environment consists of rhythmically laminated mud interbedded with thin beds of weakly stratified diamicton and stratified or massive sand and silt. On seismic-reflection profiles, this depositional system is characterized by discontinuously stratified facies with multiple channels on the surface in the proximal zone and a single channel on the largely flat sediment surface in the distal zone. The depositional system formed in the ice-distal environment consists of interbedded homogeneous or laminated mud and massive or stratified sand and coarse silt. This depositional system shows continuously stratified seismic facies with smooth and flat surfaces on minisparker records, and continuously stratified seismic facies which are interlayered with thin weakly stratified facies on Huntec records.

Effect of different coating layer on the topography and optical properties of ZnO nanostructured

NASA Astrophysics Data System (ADS)

Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Asiah, M. N.; Khusaimi, Z.; Rusop, M.

2018-05-01

Magnesium (Mg) and aluminum (Al) co-doped zinc oxide (MAZO) thin films were synthesized on glass substrate by sol-gel spin coating method. MAZO thin films were prepared at different coating layers range from 1 to 9. Atomic Force Microscopy (AFM) was used to investigate the topography of the thin films. According to the AFM results, Root Means Square (RMS) of MAZO thin films was increased from 0.747 to 6.545 nm, with increase of number coating layer from 1 to 9, respectively. The results shown the variation on structural and topography properties of MAZO seed film when it's deposited at different coating layers on glass substrate. The optical properties was analyzed using UV-Vis spectroscopy. The obtained results show that the transmittance spectra was increased as thin films coating layer increases.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Two-dimensional models for the optical response of thin films

NASA Astrophysics Data System (ADS)

Li, Yilei; Heinz, Tony F.

2018-04-01

In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

Initial formation of calcite crystals in the thin prismatic layer with the periostracum of Pinctada fucata.

PubMed

Suzuki, Michio; Nakayama, Seiji; Nagasawa, Hiromichi; Kogure, Toshihiro

2013-02-01

Although the formation mechanism of calcite crystals in the prismatic layer has been studied well in many previous works, the initial state of calcite formation has not been observed in detail using electron microscopes. In this study, we report that the soft prismatic layer with transparent color (the thin prismatic layer) in the tip of the fresh shell of Pinctada fucata was picked up to observe the early calcification phase. A scanning electron microscope (SEM) image showed that the growth tip of the thin prismatic layer was covered by the periostracum, which was also where the initial formation of calcite crystals began. A cross-section containing the thin calcite crystals in the thin prismatic layer with the periostracum was made using a focused ion beam (FIB) system. In a transmission electron microscope (TEM) observation, the thin calcite crystal (thickness is about 1μm) on the periostracum was found to be a single crystal with the c-axis oriented perpendicular to the shell surface. On the other hand, many aggregated small particles consisting of bassanite crystals were observed in the periostracum suggesting the possibility that not only organic sulfate but also inorganic sulfates exist in the prismatic layer. These discoveries in the early calcification phase of the thin prismatic layer may help to clarify the mechanism of regulating the nucleation and orientation of the calcite crystal in the shell. Copyright © 2012 Elsevier Ltd. All rights reserved.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

DOEpatents

Werner, T.R.; Falco, C.M.; Schuller, I.K.

1982-08-31

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Thin-Layer Fuel Cell for Teaching and Classroom Demonstrations

ERIC Educational Resources Information Center

Shirkhanzadeh, M.

2009-01-01

A thin-layer fuel cell is described that is simple and easy to set up and is particularly useful for teaching and classroom demonstrations. The cell is both an electrolyzer and a fuel cell and operates using a thin layer of electrolyte with a thickness of approximately 127 micrometers and a volume of approximately 40 microliters. As an…

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

NASA Astrophysics Data System (ADS)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

NASA Astrophysics Data System (ADS)

Chen, H.-Y.; Huang, Y.-R.; Shih, H.-Y.; Chen, M.-J.; Sheu, J.-K.; Sun, C.-K.

2017-11-01

Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.

Determination of the Mass Absorption Coefficient in Two-Layer Ti/V and V/Ti Thin Film Systems by the X-Ray Fluorescence Method

NASA Astrophysics Data System (ADS)

Mashin, N. I.; Chernyaeva, E. A.; Tumanova, A. N.; Gafarova, L. M.

2016-03-01

A new XRF procedure for the determination of the mass absorption coefficient in thin film Ti/V and V/Ti two-layer systems has been proposed. The procedure uses easy-to-make thin-film layers of sputtered titanium and vanadium on a polymer film substrate. Correction coefficients have been calculated that take into account attenuation of primary radiation of the X-ray tube, as well as attenuation of the spectral line of the bottom layer element in the top layer.

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Paleogene Vertebrate Paleontology, Geology and Remote Sensing in the Wind River Basin

NASA Technical Reports Server (NTRS)

Stucky, R. K.; Krishtalka, L.

1985-01-01

Biostratigraphic and lithostratigraphic studies were used to correlate different events in the geologic evolution of the northeastern part of the Wind River Basin and have suggested several conclusions. Laterally equivalent exposures of the Lysite member from Cedar Ridge to Bridger Creek show a gradation in lithology from interbedded boulder conglomerates and sandstones to interbedded lenticular sandstones and mudstones to interbedded carbonaceous shales, coals and tabular sandstones. This gradation suggests a shift from alluvial fan to braided stream to paludal or lacustrine sedimentary environments during the late early Eocene. The Lysite and Lost Cabin members of the Wind River Formation are in fault contact in the Bridger Creek area and may intertongue to the east along Cedar Ridge. Ways in which remote sensing could be used in these studies are discussed.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Experimental Study of Acid Treatment Toward Characterization of Structural, Optical, and Morphological Properties of TiO2-SnO2 Composite Thin Film

NASA Astrophysics Data System (ADS)

Fajar, M. N.; Hidayat, R.; Triwikantoro; Endarko

2018-04-01

The TiO2-SnO2 thin film with single and double-layer structure has successfully synthesized on FTO (Fluorine-doped Tin Oxide) substrate using the screen printing technique. The structural, optical, and morphological properties of the film were investigated by XRD, UV-Vis, and SEM, respectively. The results showed that the single and double-layer structure of TiO2-SnO2 thin film has mixed phase with a strong formation of casseritte phase. The acid treatment effect on TiO2-SnO2 thin film decreases the peak intensity of anatase phase formation and thin film’s absorbance values. The morphological study is also revealed that the single layer TiO2-SnO2 thin film had a more porous nature and decreased particle size distribution after acid treatment, while the double-layer TiO2-SnO2 thin film Eroded due to acid treatment.

Nanopore thin film enabled optical platform for drug loading and release.

PubMed

Song, Chao; Che, Xiangchen; Que, Long

2017-08-07

In this paper, a drug loading and release device fabricated using nanopore thin film and layer-by-layer (LbL) nanoassembly is reported. The nanopore thin film is a layer of anodic aluminum oxide (AAO), consisting of honeycomb-shape nanopores. Using the LbL nanoassembly process, the drug, using gentamicin sulfate (GS) as the model, can be loaded into the nanopores and the stacked layers on the nanopore thin film surface. The drug release from the device is achieved by immersing it into flowing DI water. Both the loading and release processes can be monitored optically. The effect of the nanopore size/volume on drug loading and release has also been evaluated. Further, the neuron cells have been cultured and can grow normally on the nanopore thin film, verifying its bio-compatibility. The successful fabrication of nanopore thin film device on silicon membrane render it as a potential implantable controlled drug release device.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Miocene-Oligocene sequence stratigraphy of the Malay Basin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lovell, R.; Elias, M.R.; Hill, R.E.

1994-07-01

The Malay Basin has experienced extension of the Eocene ( ) through Oligocene, sag in the early Miocene, and compression in the middle Miocene through Pliocene-Pleistocene. The interaction of structurally induced and glacial-eustatic accommodation changes has resulted in complex, interrelated play elements, including multiple reservoirs, diverse nonmarine sources, discontinuous migration pathways, and thin seals. Extensional subbasins were filled with braided streams, associated coastal plain, lacustrine deltas, and thick lake shales (groups M-K). This initial rift fill comprises an overall second order progradational cycle punctuated by 3rd-order cycles. These 3rd-order cycles are capped by thick, source-rich, lacustrine shale packages. The lowermore » Miocene section (groups I and J) consists of progradational to aggradational fluvial to tidally-dominated estuarine sands. Hydrocarbons are generated from interbedded coals and other coal-related lithologies.« less

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Unexpected structural and magnetic depth dependence of YIG thin films

NASA Astrophysics Data System (ADS)

Cooper, J. F. K.; Kinane, C. J.; Langridge, S.; Ali, M.; Hickey, B. J.; Niizeki, T.; Uchida, K.; Saitoh, E.; Ambaye, H.; Glavic, A.

2017-09-01

We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminum garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the observation of an interfacial region at the Pt/YIG interface, we place a limit on the induced magnetism of the Pt layer, and confirm the existence of an interfacial layer at the GGG/YIG interface. Polarized neutron reflectometry (PNR) was used to give depth dependence of both the structure and magnetism of these structures. We find that a thin film of YIG on GGG is best described by three distinct layers: an interfacial layer near the GGG, around 5 nm thick and nonmagnetic, a magnetic "bulk" phase, and a nonmagnetic and compositionally distinct thin layer near the surface. We theorize that the bottom layer, which is independent of the film thickness, is caused by Gd diffusion. The top layer is likely to be extremely important in inverse spin Hall effect measurements, and is most likely Y2O3 or very similar. Magnetic sensitivity in the PNR to any induced moment in the Pt is increased by the existence of the Y2O3 layer; any moment is found to be less than 0.02 μB/atom .

Methods for fabricating thin film III-V compound solar cell

DOEpatents

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Laser readable thermoluminescent radiation dosimeters and methods for producing thereof

DOEpatents

Braunlich, Peter F.; Tetzlaff, Wolfgang

1989-01-01

Thin layer thermoluminescent radiation dosimeters for use in laser readable dosimetry systems, and methods of fabricating such thin layer dosimeters. The thin layer thermoluminescent radiation dosimeters include a thin substrate made from glass or other inorganic materials capable of withstanding high temperatures and high heating rates. A thin layer of a thermoluminescent phoshphor material is heat bonded to the substrate using an inorganic binder such as glass. The dosimeters can be mounted in frames and cases for ease in handling. Methods of the invention include mixing a suitable phosphor composition and binder, both being in particulate or granular form. The mixture is then deposited onto a substrate such as by using mask printing techniques. The dosimeters are thereafter heated to fuse and bond the binder and phosphor to the substrate.

A 100-year average recurrence interval for the San Andreas fault at Wrightwood, California

USGS Publications Warehouse

Fumal, T.E.; Pezzopane, S.K.; Weldon, R.J.; Schwartz, D.P.

1993-01-01

Evidence for five large earthquakes during the past five centuries along the San Andreas fault zone 70 kilometers northeast of Los Angeles, California, indicates that the average recurrence interval and the temporal variability are significantly smaller than previously thought. Rapid sedimentation during the past 5000 years in a 150-meter-wide structural depression has produced a greater than 21-meter-thick sequence of debris flow and stream deposits interbedded with more than 50 datable peat layers. Fault scarps, colluvial wedges, fissure infills, upward termination of ruptures, and tilted and folded deposits above listric faults provide evidence for large earthquakes that occurred in A.D. 1857, 1812, and about 1700, 1610, and 1470.

Layered Organization in the Coastal Ocean: 4-D Assessment of Thin Layer Structure, Dynamics and Impacts

DTIC Science & Technology

2007-09-30

For example, the differences seen between the waters off of the US Pacific Northwest and the California Bight are almost certainly a reflection of the...the Pacific Northwest were favorable for thin layer development during that study. This is even more evident in those cases where thin layers...approach during the 2005 and 2006 LOCO process study combined time series data from an array of our Ocean Response Coastal Analysis System ( ORCAS ) (Donaghay

Reservoir properties of submarine- fan facies: Great Valley sequence, California.

USGS Publications Warehouse

McLean, H.

1981-01-01

Submarine-fan sandstones of the Great Valley sequence west of the Sacramento Valley, California, have low porosities and permeabilities. However, petrography and scanning electron microscope studies indicate that most sands in almost all submarine-fan environments are originally porous and permeable. Thin turbidite sandstones deposited in areas dominated by shale in the outer-fan and basin-plain are cemented mainly by calcite; shale dewatering is inferred to contribute to rapid cementation early in the burial process. Sands deposited in inner- and middle-fan channels with only thin shale beds have small percentrages of intergranular cement. The original porosity is reduced mechanically at shallow depths and by pressure solution at deeperlevels. Permeability decreases with increasing age of the rocks, as a result of increasing burial depths. Computer-run stepwise regression analyses show that the porosity is inversely related to the percentage of calcite cement. The results reported here indicate original porosity and permeability can be high in deep-water submarine fans and that fan environments dominated by sand (with high sand/shale ratios) are more likely to retain higher porosity and permeability to greater depths than sand interbedded with thick shale sequences.-from Author

High average power scaleable thin-disk laser

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

2002-01-01

Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

The enhancement mechanism of thin plasma layer on antenna radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Jiang, Binhao; Li, Xueai

A model of plasma-antenna is carried out to study the radiation enhancement mechanism of antenna covered by thin plasma layer. The results show when the radiation intensity achieves maximum, a region of equal electric field is formed due to the reflection of electric field at the interface of plasma and air. The plasma layer acted as an extension of the antenna. Furthermore, the shape of plasma layer is changed to verify the effect of plasma boundary on antenna radiation. The study shows the effect of thin plasma layer on electromagnetic field and provides a type of plasma antenna.

Petrologic and isotopic data from the Cretaceous (Campanian) Blackhawk Formation and Star Point Sandstone (Mesaverde Group), Wasatch Plateau, Utah

USGS Publications Warehouse

Fishman, Neil S.; Turner, Christine E.; Peterson, Fred

2013-01-01

The presence of discrete minerals associated with coal—whether (1) detrital or authigenic constituents of the coals or in thin mudstone or siltstone units interbedded with coals, or (2) authigenic phases that formed along cleats—might influence its utilization as an energy resource. The build-up of sintered ash deposits on the surfaces of heat exchangers in coal-fired power plants, due to the alteration of minerals during combustion of the coal, can seriously affect the functioning of the boiler and enhance corrosion of combustion equipment. In particular, the presence of sodium in coals has been considered a key factor in the fouling of boilers; however, other elements (such as calcium or magnesium) and the amount of discrete minerals burned with coal can also play a significant role in the inefficiency of and damage to boilers. Previous studies of the quality of coals in the Cretaceous (Campanian) Blackhawk Formation of the Wasatch Plateau, Utah, revealed that the sodium content of the coals varied across the region. To better understand the origin and distribution of sodium in these coals, petrologic studies were undertaken within a sedimentological framework to evaluate the timing and geochemical constraints on the emplacement of sodium-bearing minerals, particularly analcime, which previously had been identified in coals in the Blackhawk Formation. Further, the study was broadened to include not just coals in the Blackhawk Formation from various localities across the Wasatch Plateau, but also sandstones interbedded with the coals as well as sandstones in the underlying Star Point Sandstone. The alteration history of the sandstones in both formations was considered a key component of this study because it records the nature and timing of fluids passing through them and the associated precipitation of sodium-bearing minerals; thus, the alteration history could place constraints on the distribution and timing of sodium mineralization in the interbedded or overlying Blackhawk coals. Although some preliminary results were previously presented at scientific meetings, the petrologic and geochemical data have not been fully compiled and reported. The purpose of this report is to present the methods of data acquisition and the results of petrologic and isotopic analyses on coal and sandstone samples from the Blackhawk Formation as well as sandstones of the underlying Star Point Sandstone.

Improving Fire Resistance of Cotton Fabric through Layer-by-Layer Assembled Graphene Multilayer Nanocoating

NASA Astrophysics Data System (ADS)

Jang, Wonjun; Chung, Il Jun; Kim, Junwoo; Seo, Seongmin; Park, Yong Tae; Choi, Kyungwho

2018-05-01

In this study, thin films containing poly(vinyl alcohol) (PVA) and graphene nanoplatelets (GNPs), stabilized with poly(4-styrene-sulfonic acid) (PSS), were assembled by a simple and cost-effective layer-by-layer (LbL) technique in order to introduce the anti-flammability to cotton. These antiflammable layers were characterized by using UV-vis spectrometry and quartz crystal microbalance as a function of the number of bilayers deposited. Scanning electron microscopy was used to visualize the morphology of the thin film coatings on the cotton fabric. The graphene-polymer thin films introduced anti-flammable properties through thermally stable carbonaceous layers at a high temperature. The thermal stability and flame retardant property of graphene-coated cotton was demonstrated by thermogravimetric analysis, cone calorimetry, and vertical flame test. The results indicate that LbL-assembled graphene-polymer thin films can be applied largely in the field of flame retardant.

Lower Brioverian formations (Upper Proterozoic) of the Armorican Massif (France): geodynamic evolution of source areas revealed by sandstone petrography and geochemistry

NASA Astrophysics Data System (ADS)

Dabard, Marie Pierre

1990-11-01

Formations with interbedded cherts constitute an important part of the Lower Brioverian succession (Upper Proterozoic age) in the Armorican Massif (northwest France). These formations are composed of shale-sandstone alternations with interbedded siliceous carbonaceous members. Petrographic and geochemical study of the detrital facies shows that these rocks are compositionally immature. The wackes are rich in lithic fragments (volcanic fragments: 3-20% modal; sedimentary and metamorphic fragments: 0-7% modal) and in feldspar (5-16%). From the geochemical point of view, they are relatively enriched in Fe 2+MgO (about 5.5%) and in alkalis with {Na 2O }/{K 2O } ratios greater than 1. The CaO contents are low (about 0.3%). Slightly negative Eu anomalies are observed ( {Eu}/{Eu ∗} = 0.8 ). Their chemical compositions are in agreement with a dominantly acidic source area with deposition in a continental active margin setting. Compared with other Upper Proterozoic deposits of the Armorican Massif, the interbedded-chert formations appear rather similar to other deposits in North Brittany which accumulated in an intra-arc or back-arc basin environment. The formations with interbedded cherts are interpreted as having been deposited during an early stage of magmatic arc activity (around 640-630 Ma ago) in an immature marginal basin. The clastic supply to these formations is derived in part from early volcanic products (acidic to intermediate) which are linked to subduction beneath the North Armorican Domain. Another component is inherited from the reworking of 2000 Ma old basement relics. The opening of the back-arc domain, with associated basaltic volcanism, would bring about a progressive displacement of the interbedded-chert depositional basin towards the continental margin.

Programmable Electrochemical Rectifier Based on a Thin-Layer Cell.

PubMed

Park, Seungjin; Park, Jun Hui; Hwang, Seongpil; Kwak, Juhyoun

2017-06-21

A programmable electrochemical rectifier based on thin-layer electrochemistry is described here. Both the rectification ratio and the response time of the device are programmable by controlling the gap distance of the thin-layer electrochemical cell, which is easily controlled using commercially available beads. One of the electrodes was modified using a ferrocene-terminated self-assembled monolayer to offer unidirectional charge transfers via soluble redox species. The thin-layer configuration provided enhanced mass transport, which was determined by the gap thickness. The device with the smallest gap thickness (∼4 μm) showed an unprecedented, high rectification ratio (up to 160) with a fast response time in a two-terminal configuration using conventional electronics.

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

NMR of thin layers using a meanderline surface coil

DOEpatents

Cowgill, Donald F.

2001-01-01

A miniature meanderline sensor coil which extends the capabilities of nuclear magnetic resonance (NMR) to provide analysis of thin planar samples and surface layer geometries. The sensor coil allows standard NMR techniques to be used to examine thin planar (or curved) layers, extending NMRs utility to many problems of modern interest. This technique can be used to examine contact layers, non-destructively depth profile into films, or image multiple layers in a 3-dimensional sense. It lends itself to high resolution NMR techniques of magic angle spinning and thus can be used to examine the bonding and electronic structure in layered materials or to observe the chemistry associated with aging coatings. Coupling this sensor coil technology with an arrangement of small magnets will produce a penetrator probe for remote in-situ chemical analysis of groundwater or contaminant sediments. Alternatively, the sensor coil can be further miniaturized to provide sub-micron depth resolution within thin films or to orthoscopically examine living tissue. This thin-layer NMR technique using a stationary meanderline coil in a series-resonant circuit has been demonstrated and it has been determined that the flat meanderline geometry has about he same detection sensitivity as a solenoidal coil, but is specifically tailored to examine planar material layers, while avoiding signals from the bulk.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Structural characteristics of cohesive flow deposits, and a sedimentological approach on their flow mechanisms.

NASA Astrophysics Data System (ADS)

Tripsanas, E. K.; Bryant, W. R.; Prior, D. B.

2003-04-01

A large number of Jumbo Piston cores (up to 20 m long), acquired from the continental slope and rise of the Northwest Gulf of Mexico (Bryant Canyon area and eastern Sigsbee Escarpment), have recovered various mass-transport deposits. The main cause of slope instabilities over these areas is oversteepening of the slopes due to the seaward mobilization of the underlying allochthonous salt masses. Cohesive flow deposits were the most common recoveries in the sediment cores. Four types of cohesive flow deposits have been recognized: a) fluid debris flow, b) mud flow, c) mud-matrix dominated debris flow, and d) clast-dominated debris flow deposits. The first type is characterized by its relatively small thickness (less than 1 m), a mud matrix with small (less than 0.5 cm) and soft mud-clasts, and a faint layering. The mud-clasts reveal a normal grading and become more abundant towards the base of each layer. That reveals that their deposition resulted by several successive surges/pulses, developed in the main flow, than the sudden “freezing” of the whole flow. The main difference between mud flow and mud-matrix dominated debris flow deposits is the presence of small to large mud-clasts in the later. Both deposits consist of a chaotic mud-matrix, and a basal shear laminated zone, where the strongest shearing of the flow was exhibited. Convolute laminations, fault-like surfaces, thrust faults, and microfaults are interpreted as occurring during the “freezing” of the flows and/or by adjustments of the rested deposits. Clast-dominated debris flow deposits consist of three zones: a) an upper plug-zone, characterized by large interlocked clasts, b) a mid-zone, of higher reworked, inversely graded clasts, floating in a mud-matrix, and c) a lower shear laminated zone. The structure of the last three cohesive flow deposits indicate that they represent deposition of typical Bingham flows, consisting of an upper plug-zone in which the yield stress is not exceeded and an underlain shearing zone, where the shear stress exceeded the yield strength of the sediments. Mud-matrix, and clast-dominated debris flow deposits are the pervasive ones. Intensely sheared thin layers (5- to 20 cm) with sharp bases, displayed as successive layers at the base of mud/debris flow deposits, or as isolated depositional units interbedded in hemipelagic sediments, are as interesting, as enigmatic. They are interpreted as basal self-lubricating layers, of having high shear stress and pore pressures, over which the mud/debris flows were able to travel for very long distances.

The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

NASA Astrophysics Data System (ADS)

Kim, Doyoung; Kang, Hyemin; Kim, Jae-Min; Kim, Hyungjun

2011-02-01

Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

Laser readable thermoluminescent radiation dosimeters and methods for producing thereof

DOEpatents

Braunlich, P.F.; Tetzlaff, W.

1989-04-25

Thin layer thermoluminescent radiation dosimeters for use in laser readable dosimetry systems, and methods of fabricating such thin layer dosimeters are disclosed. The thin layer thermoluminescent radiation dosimeters include a thin substrate made from glass or other inorganic materials capable of withstanding high temperatures and high heating rates. A thin layer of a thermoluminescent phosphor material is heat bonded to the substrate using an inorganic binder such as glass. The dosimeters can be mounted in frames and cases for ease in handling. Methods of the invention include mixing a suitable phosphor composition and binder, both being in particulate or granular form. The mixture is then deposited onto a substrate such as by using mask printing techniques. The dosimeters are thereafter heated to fuse and bond the binder and phosphor to the substrate. 34 figs.

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

Self-assembled three-dimensional and compressible interdigitated thin-film supercapacitors and batteries

PubMed Central

Nyström, Gustav; Marais, Andrew; Karabulut, Erdem; Wågberg, Lars; Cui, Yi; Hamedi, Mahiar M.

2015-01-01

Traditional thin-film energy-storage devices consist of stacked layers of active films on two-dimensional substrates and do not exploit the third dimension. Fully three-dimensional thin-film devices would allow energy storage in bulk materials with arbitrary form factors and with mechanical properties unique to bulk materials such as compressibility. Here we show three-dimensional energy-storage devices based on layer-by-layer self-assembly of interdigitated thin films on the surface of an open-cell aerogel substrate. We demonstrate a reversibly compressible three-dimensional supercapacitor with carbon nanotube electrodes and a three-dimensional hybrid battery with a copper hexacyanoferrate ion intercalating cathode and a carbon nanotube anode. The three-dimensional supercapacitor shows stable operation over 400 cycles with a capacitance of 25 F g−1 and is fully functional even at compressions up to 75%. Our results demonstrate that layer-by-layer self-assembly inside aerogels is a rapid, precise and scalable route for building high-surface-area 3D thin-film devices. PMID:26021485

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Fabrication of read-only type triple-layered disc

NASA Astrophysics Data System (ADS)

Yang, Huei Wen; Jeng, Tzuan Ren; Yen, Wen Hsin; Chan, Rong Po; Shin, Kuo Ding; Huang, Der Ray

2003-06-01

The approach to increase optical recording density has become very popular research subject in these years. One direct and effective method is to increase the recording layer stack number. That is to say, to add one more recording layer can get one more recording capacity. In this paper, we will propose a new method for manufacturing read only type multi-layered disc. The process is described in the following. This first recorded data layer (called L0) still follows the traditional DVD disc manufacturing process. We obtain the polycarbonate substrate by replicating from Ni stamper. Then polycarbonate substrate is sputtered thin silicon film for semi-reflection layer. As for second layer (L1) and even more layer (Ln-1) producing, one special kind of duplication (called SKD) method is proposed. The duplication (or replication) source of second or nth recorded data is not only limited from Ni stamper. Even polycarbonate or PMMA substrate has recording data are also acceptable sources. At next step, the duplication source is deposited by thin gold film. Then we apply spin coating to bond the first layer (L0) substrate and second layer (L1) duplication source by choosing suitable UV curing glue. After being emitted by UV lamp for several seconds, we can easily separate the duplication source of second layer (L1) from (L0) substrate. Then we find the thin second data layer (L1) is replicated and stacks upon the first layer. On the same way, we sputter thin AgTi layer on the thin second data layer for another semi- reflective layer. By following the above manufacture step, we can produce more layers. In our experimental, we prepare triple layered read-only type disc. The total capacity is almost 12GB for one side of disc, and 24GB for two side of disc. The read-out intensity of laser from each data layer is expected to be similar. Thus we have designed particular reflectance and transmittance for each data layer by controlling the thickness of thin silicon film. We can verify our design by checking the focusing error signal in S-curve search of optical pickup head. The signal quality for each layer can be found from the signal eye pattern and jitter. For compatibility with present drive system, the requirement of the readout signal from each layer should be same as DVD or CD specification

Insight into the epitaxial encapsulation of Pd catalysts in an oriented metalloporphyrin network thin film for tandem catalysis.

PubMed

Vohra, M Ismail; Li, De-Jing; Gu, Zhi-Gang; Zhang, Jian

2017-06-14

A palladium catalyst (Pd-Cs) encapsulated metalloporphyrin network PIZA-1 thin film with bifunctional properties has been developed through a modified epitaxial layer-by-layer encapsulation approach. Combining the oxidation activity of Pd-Cs and the acetalization activity of the Lewis acidic sites in the PIZA-1 thin film, this bifunctional catalyst of the Pd-Cs@PIZA-1 thin film exhibits a good catalytic activity in a one-pot tandem oxidation-acetalization reaction. Furthermore, the surface components can be controlled by ending the top layer with different precursors in the thin film preparation procedures. The catalytic performances of these thin films with different surface composites were studied under the same conditions, which showed different reaction conversions. The result revealed that the surface component can influence the catalytic performance of the thin films. This epitaxial encapsulation offers a good understanding of the tandem catalysis for thin film materials and provides useful guidance to develop new thin film materials with catalytic properties.

Use of a thin-layer technique in thyroid fine needle aspiration.

PubMed

Malle, Despoina; Valeri, Rosalia-Maria; Pazaitou-Panajiotou, Kalliopi; Kiziridou, Anastasia; Vainas, Iraklis; Destouni, Charicleia

2006-01-01

To investigate the efficacy of the ThinPrep Processor (Cytyc Corporation, Boxborough, Massachusetts, U.S.A) in fine needle aspiration (FNA) of thyroid gland lesions. This study included 459 thyroid FNA specimens obtained from patients who came to our endocrinology department with various thyroid disorders over 3 years. The cytologic material was prepared using both the conventional and ThinPrep method in the first 2 years (285 cases), while in the last one only the ThinPrep method was used (1 74 cases). The smears were stained using a modified Papanicolaou procedure and May-Grünwald-Giemsa stain. Immunocytochemistry was performed on thin-layer slides using specific monoclonal antibodies when needed. Thin-layer and direct smear diagnoses were compared with the final cytologic or histologic diagnoses, when available. Our cases included 279 adenomatoid nodules, 15 cases of Hashimoto thyroiditis, 45 follicular neoplasms, 14 Hürthle cell tumors, 58 papillary carcinomas and 1 5 anaplastic carcinomas. Thin-layer preparations showed a trend toward a lower proportion of inadequate specimens and a lower false negative rate. Cytomorphologic features showed some differences between the 2 methods. Colloid was less frequently observed on ThinPrep slides, while nuclear detail and micronucleoli were more easily detected with this technique. Moreover, ThinPrep appeared to be the appropriate method for the use of ancillary techniques in suspicious cases. Thin-layer cytology improves the diagnostic accuracy of thyroid FNA and offers the possibility of performing new techniques, such as immunocytochemistry, on the same sample in order to detect malignancy as well as the type and origin of thyroid gland neoplasms.

Photovoltaic sub-cell interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

2017-05-09

Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

Effect of atmospheric-pressure plasma treatment on the adhesion properties of a thin adhesive layer in a selective transfer process

NASA Astrophysics Data System (ADS)

Yoon, Min-Ah; Kim, Chan; Hur, Min; Kang, Woo Seok; Kim, Jaegu; Kim, Jae-Hyun; Lee, Hak-Joo; Kim, Kwang-Seop

2018-01-01

The adhesion between a stamp and thin film devices is crucial for their transfer on a flexible substrate. In this paper, a thin adhesive silicone layer on the stamp was treated by atmospheric pressure plasma to locally control the adhesion strength for the selective transfer. The adhesion strength of the silicone layer was significantly reduced after the plasma treatment, while its surface energy was increased. To understand the inconsistency between the adhesion strength and surface energy changes, the surface properties of the silicone layer were characterized using nanoindentation and X-ray photoelectron spectroscopy. These techniques revealed that a thin, hard, silica-like layer had formed on the surface from plasma-enhanced oxidation. This layer played an important role in decreasing the contact area and increasing the interfacial slippage, resulting in decreased adhesion. As a practical application, the transfer process was demonstrated on GaN LEDs that had been previously delaminated by a laser lift-off (LLO) process. Although the LEDs were not transferred onto the treated adhesive layer due to the reduced adhesion, the untreated adhesive layer could readily pick up the LEDs. It is expected that this simple method of controlling the adhesion of a stamp with a thin adhesive layer would enable a continuous, selective and large-scale roll-to-roll selective transfer process and thereby advance the development of flexible, stretchable and wearable electronics.

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

NASA Astrophysics Data System (ADS)

Sun, Xigui; Gao, Kewei; Pang, Xiaolu; Yang, Huisheng; Volinsky, Alex A.

2015-11-01

Lead selenide thin films with different microstructure were deposited on Si (1 0 0) substrates using magnetron sputtering at 50 °C, 150 °C and 250 °C, respectively. The crystal structure of the sputtered PbSe thin films varies from amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1-5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

NASA Astrophysics Data System (ADS)

Zepeda-Ruiz, Luis A.; Pelzel, Rodney I.; Nosho, Brett Z.; Weinberg, W. Henry; Maroudas, Dimitrios

2001-09-01

A comprehensive, quantitative analysis is presented of the deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems. The analysis combines a hierarchical theoretical approach with experimental measurements. Continuum linear elasticity theory is linked with atomic-scale calculations of structural relaxation for detailed theoretical studies of deformation in systems consisting of InAs thin films on thin GaAs(111)A substrates that are mechanically unconstrained at their bases. Molecular-beam epitaxy is used to grow very thin InAs films on both thick and thin GaAs buffer layers on epi-ready GaAs(111)A substrates. The deformation state of these samples is characterized by x-ray diffraction (XRD). The interplanar distances of thin GaAs buffer layers along the [220] and [111] crystallographic directions obtained from the corresponding XRD spectra indicate clearly that thin buffer layers deform parallel to the InAs/GaAs(111)A interfacial plane, thus aiding in the accommodation of the strain induced by lattice mismatch. The experimental measurements are in excellent agreement with the calculated lattice interplanar distances and the corresponding strain fields in the thin mechanically unconstrained substrates considered in the theoretical analysis. Therefore, this work contributes direct evidence in support of our earlier proposal that thin buffer layers in layer-by-layer semiconductor heteroepitaxy exhibit mechanical behavior similar to that of compliant substrates [see, e.g., B. Z. Nosho, L. A. Zepeda-Ruiz, R. I. Pelzel, W. H. Weinberg, and D. Maroudas, Appl. Phys. Lett. 75, 829 (1999)].

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Controlled placement and orientation of nanostructures

DOEpatents

Zettl, Alex K; Yuzvinsky, Thomas D; Fennimore, Adam M

2014-04-08

A method for controlled deposition and orientation of molecular sized nanoelectromechanical systems (NEMS) on substrates is disclosed. The method comprised: forming a thin layer of polymer coating on a substrate; exposing a selected portion of the thin layer of polymer to alter a selected portion of the thin layer of polymer; forming a suspension of nanostructures in a solvent, wherein the solvent suspends the nanostructures and activates the nanostructures in the solvent for deposition; and flowing a suspension of nanostructures across the layer of polymer in a flow direction; thereby: depositing a nanostructure in the suspension of nanostructures only to the selected portion of the thin layer of polymer coating on the substrate to form a deposited nanostructure oriented in the flow direction. By selectively employing portions of the method above, complex NEMS may be built of simpler NEMSs components.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Damped response of shells by a constrained viscoelastic layer

NASA Technical Reports Server (NTRS)

El-Raheb, M.; Wagner, P.

1986-01-01

Vibration absorbers are introduced into an asymmetric configuration of thin cylinders and tori enclosing an acoustic medium. The absorbers consist of thin axial strips bonded to the cylinder with a thin viscoelastic layer. The constrained layer dissipates the energy of relative motions between strip and cylinder. The absorber is most effective on response modes with two or more circumferential waves. The use of transfer matrices is extended to the coupled cylinder-absorber system.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Highly stable thin film transistors using multilayer channel structure

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.; Hedhili, M. N.; Alshareef, H. N.

2015-03-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Method of manufacturing a shapeable short-resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

DOEpatents

Wang, Qi; Iwaniczko, Eugene

2006-10-17

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

Lidar observation of transition of cirrus clouds over a tropical station Gadanki (13.45° N, 79.18° E): case studies

NASA Astrophysics Data System (ADS)

Srinivasan, M. A.; Rao, C. Dhananjaya; Krishnaiah, M.

2016-05-01

The present study describes Mie lidar observations of the cirrus cloud passage showing transition between double thin layers into single thick and single thick layer into double thin layers of cirrus over Gadanki region. During Case1: 17 January 2007, Case4: 12 June 2007, Case5: 14 July 2007 and Case6: 24 July 2007 the transition is found to from two thin cirrus layers into single geometrically thick layer. Case2: 14 May 2007 and Case3: 15 May 2007, the transition is found to from single geometrically thick layer into two thin cirrus layers. Linear Depolarization Ratio (LDR) and Back Scatter Ration (BSR) are found to show similar variation with strong peaks during transition; both LDR and Cloud Optical Depth (COD) is found to show similar variation except during transition with strong peaks in COD which is not clearly found from LDR for the all cases. There is a significant weakening of zonal and meridional winds during Case1 which might be due to the transition from multiple to single thick cirrus indicating potential capability of thick cirrus in modulating the wind fields. There exists strong upward wind dominance contributed to significant ascent in cloud-base altitude thereby causing transition of multiple thin layers into single thick cirrus.

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Tephrostratigraphy of the A.D. 79 pyroclastic deposits in perivolcanic areas of Mt. Vesuvio (Italy)

NASA Astrophysics Data System (ADS)

Lirer, Lucio; Munno, Rosalba; Petrosino, Paola; Vinci, Anna

1993-11-01

Correlations between pyroclastic deposits in perivolcanic areas are often complicated by lateral and vertical textural variations linked to very localized depositional effects. In this regard, a detailed sampling of A.D. 79 eruption products has been performed in the main archaeological sites of the perivolcanic area, with the aim of carrying out a grain-size, compositional and geochemical investigation so as to identify the marker layers from different stratigraphic successions and thus reconstruct the eruptive sequence. In order to process the large number of data available, a statistical approach was considered the most suitable. Statistical processing highlighted 14 marker layers among the fall, stratified surge and pyroclastic flow deposits. Furthermore statistical analysis made it possible to correlate pyroclastic flow and surge deposits interbedded with fall, interpreted as a lateral facies variation. Finally, the passage from magmatic to hydromagmatic activity is marked by the deposition of pyroclastic flow, surge and accretionary lapilli-bearing deposits. No transitional phase from magmatic to hydromagmatic activity has been recognized.

Exhuming Crater in Northeast Arabia

NASA Technical Reports Server (NTRS)

2003-01-01

MGS MOC Release No. MOC2-563, 3 December 2003

The upper crust of Mars is layered, and interbedded with these layers are old, filled and buried meteor impact craters. In a few places on Mars, such as Arabia Terra, erosion has re-exposed some of the filled and buried craters. This October 2003 Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows an example. The larger circular feature was once a meteor crater. It was filled with sediment, then buried beneath younger rocks. The smaller circular feature is a younger impact crater that formed in the surface above the rocks that buried the large crater. Later, erosion removed all of the material that covered the larger, buried crater, except in the location of the small crater. This pair of martian landforms is located near 17.6oN, 312.8oW. The image covers an area 3 km (1.9 mi) wide and is illuminated from the lower left.

Diagenetic Crystal Clusters and Dendrites, Lower Mount Sharp, Gale Crater

NASA Technical Reports Server (NTRS)

Kah, L. C.; Kronyak, R.; Van Beek, J.; Nachon, M.; Mangold, N.; Thompson, L.; Wiens, R.; Grotzinger, J.; Farmer, J.; Minitti, M.;

Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

PubMed

Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

2015-12-01

This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P < 0.05. The thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers. © 2015 Australian Society of Endodontology.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Microbialites and global environmental change across the Permian-Triassic boundary: a synthesis.

PubMed

Kershaw, S; Crasquin, S; Li, Y; Collin, P-Y; Forel, M-B; Mu, X; Baud, A; Wang, Y; Xie, S; Maurer, F; Guo, L

2012-01-01

Permian-Triassic boundary microbialites (PTBMs) are thin (0.05-15 m) carbonates formed after the end-Permian mass extinction. They comprise Renalcis-group calcimicrobes, microbially mediated micrite, presumed inorganic micrite, calcite cement (some may be microbially influenced) and shelly faunas. PTBMs are abundant in low-latitude shallow-marine carbonate shelves in central Tethyan continents but are rare in higher latitudes, likely inhibited by clastic supply on Pangaea margins. PTBMs occupied broadly similar environments to Late Permian reefs in Tethys, but extended into deeper waters. Late Permian reefs are also rich in microbes (and cements), so post-extinction seawater carbonate saturation was likely similar to the Late Permian. However, PTBMs lack widespread abundant inorganic carbonate cement fans, so a previous interpretation that anoxic bicarbonate-rich water upwelled to rapidly increase carbonate saturation of shallow seawater, post-extinction, is problematic. Preliminary pyrite framboid evidence shows anoxia in PTBM facies, but interbedded shelly faunas indicate oxygenated water, perhaps there was short-term pulsing of normally saturated anoxic water from the oxygen-minimum zone to surface waters. In Tethys, PTBMs show geographic variations: (i) in south China, PTBMs are mostly thrombolites in open shelf settings, largely recrystallised, with remnant structure of Renalcis-group calcimicrobes; (ii) in south Turkey, in shallow waters, stromatolites and thrombolites, lacking calcimicrobes, are interbedded, likely depth-controlled; and (iii) in the Middle East, especially Iran, stromatolites and thrombolites (calcimicrobes uncommon) occur in different sites on open shelves, where controls are unclear. Thus, PTBMs were under more complex control than previously portrayed, with local facies control playing a significant role in their structure and composition. © 2011 Blackwell Publishing Ltd.

Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

NASA Astrophysics Data System (ADS)

Obitayo, Waris

The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the influence of the network density on the piezoresistivity of mechanically drawn SWCNT thin films. Mechanically drawn SWCNT thin films with different layer (or thickness) e.g. 1-layer, 3-layer, 10-layer and 20-layer SWCNT thin films were prepared to understand the variation of SWCNT network density as well as the alignment of SWCNTs on the strain sensitivity. The less entangled SWCNT bundles observed in the sparse network density (1- layer and 3-layer SWCNT thin films) allows for easy alignment and the best gauge factors. As compared to the randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~8x increase on the GF for the 1-layer SWCNT thin films while the 20-layer SWCNT thin films exhibited ~3x increase in the GF. My third accomplishment examines the effect of SWCNT bundles with different diameters on the piezoresistive behavior of mechanically drawn SWCNT thin films. SWCNT thin film network of sparse morphology (1-layer) with different bundle sizes were prepared by varying the sonication duration e.g. S0.5hr, S4hr, S10hr and S20hr and using spraying coating. The GF increased by a factor of ~10 when the randomly oriented SWCNT thin film was stretched to a draw ratio of 3.2 for the S0.5hr SWCNT thin films and by a factor of ~2 for the S20hr SWCNT thin films. Three main mechanisms were attributed to this behavior e.g. effect of concentration of exfoliated nanotubes, bundle reduction due to mechanical stretching, and influence of bundle length on the alignment of SWCNTs. Furthermore, information about the average length and length distribution is very essential when investigating the influence of individual nanotube length on the strain sensitivity. With that in mind, we would use our previously developed preparative ultracentrifuge method (PUM), and our newly developed gel electrophoresis and simultaneous Raman and photoluminescence spectroscopy (GEP-SRSPL) to characterize the average length and length distribution of individual SWCNTs respectively.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya. R. N.

2008-01-01

CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

Thin-Film Power Transformers

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

Effects of morphological control on the characteristics of vertical-type OTFTs using Alq3.

PubMed

Kim, Young Do; Park, Jong Wook; Kang, In Nam; Oh, Se Young

2008-09-01

We have fabricated vertical-type organic thin-film transistors (OTFTs) using tris-(8-hydroxyquinoline) aluminum (Alq(3)) as an n-type active material. Vertical-type OTFT using Alq(3) has a layered structure of Al(source electrode)/Alq(3)(active layer)/Al(gate electrode)/Alq(3)(active layer)/ITO glass(drain electrode). Alq(3) thin films containing various surface morphologies could be obtained by the control of evaporation rate and substrate temperature. The effects of the morphological control of Alq(3) thin layer on the grain size and the flatness of film surface were investigated. The characteristics of vertical-type OTFT significantly influenced the growth condition of Alq(3) layer.

Disruption of vertical motility by shear triggers formation of thin phytoplankton layers.

PubMed

Durham, William M; Kessler, John O; Stocker, Roman

2009-02-20

Thin layers of phytoplankton are important hotspots of ecological activity that are found in the coastal ocean, meters beneath the surface, and contain cell concentrations up to two orders of magnitude above ambient concentrations. Current interpretations of their formation favor abiotic processes, yet many phytoplankton species found in these layers are motile. We demonstrated that layers formed when the vertical migration of phytoplankton was disrupted by hydrodynamic shear. This mechanism, which we call gyrotactic trapping, can be responsible for the thin layers of phytoplankton commonly observed in the ocean. These results reveal that the coupling between active microorganism motility and ambient fluid motion can shape the macroscopic features of the marine ecological landscape.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Altitude of the top of the Sparta Sand and Memphis Sand in three areas of Arkansas

USGS Publications Warehouse

Pugh, Aaron L.; Westerfield, Paul W.; Gonthier, Gerard; Poynter, David T.

1998-01-01

The Sparta Sand and Memphis Sand form the second most productive aquifer in Arkansas. The Sparta Sand and Memphis Sand range in thick- ness from 0 to 900 feet, consisting of fine- to medium-grained sands interbedded with layers of silt, clay, shale, and minor amounts of lignite. Within the three areas of interest, the top surface of the Sparta Sand and Memphis Sand dips regionally east and southeast towards the axis of the Mississippi Embayment syncline and Desha Basin. Local variations in the top surface may be attributed to a combination of continued development of structural features, differential compaction, localized faulting, and erosion of the surface prior to subsequent inundation and deposition of younger sediments.

Evaluation of a pumping test of the Snake River Plain aquifer using axial-flow numerical modeling

NASA Astrophysics Data System (ADS)

Johnson, Gary S.; Frederick, David B.; Cosgrove, Donna M.

2002-06-01

The Snake River Plain aquifer in southeast Idaho is hosted in a thick sequence of layered basalts and interbedded sediments. The degree to which the layering impedes vertical flow has not been well understood, yet is a feature that may exert a substantial control on the movement of contaminants. An axial-flow numerical model, RADFLOW, was calibrated to pumping test data collected by a straddle-packer system deployed at 23 depth intervals in four observation wells to evaluate conceptual models and estimate properties of the Snake River Plain aquifer at the Idaho National Engineering and Environmental Laboratory. A delayed water-table response observed in intervals beneath a sediment interbed was best reproduced with a three-layer simulation. The results demonstrate the hydraulic significance of this interbed as a semi-confining layer. Vertical hydraulic conductivity of the sediment interbed was estimated to be about three orders of magnitude less than vertical hydraulic conductivity of the lower basalt and upper basalt units. The numerical model was capable of representing aquifer conceptual models that could not be represented with any single analytical technique. The model proved to be a useful tool for evaluating alternative conceptual models and estimating aquifer properties in this application.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Modeling of Multiphase Flow through Thin Porous Layers: Application to a Polymer Electrolyte Fuel Cell (PEFC)

NASA Astrophysics Data System (ADS)

Qin, C.; Hassanizadeh, S.

2013-12-01

Multiphase flow and species transport though thin porous layers are encountered in a number of industrial applications, such as fuel cells, filters, and hygiene products. Based on some macroscale models like the Darcy's law, to date, the modeling of flow and transport through such thin layers has been mostly performed in 3D discretized domains with many computational cells. But, there are a number of problems with this approach. First, a proper representative elementary volume (REV) is not defined. Second, one needs to discretize a thin porous medium into computational cells whose size may be comparable to the pore sizes. This suggests that the traditional models are not applicable to such thin domains. Third, the interfacial conditions between neighboring layers are usually not well defined. Last, 3D modeling of a number of interacting thin porous layers often requires heavy computational efforts. So, to eliminate the drawbacks mentioned above, we propose a new approach to modeling multilayers of thin porous media as 2D interacting continua (see Fig. 1). Macroscale 2D governing equations are formulated in terms of thickness-averaged material properties. Also, the exchange of thermodynamic properties between neighboring layers is described by thickness-averaged quantities. In Comparison to previous macroscale models, our model has the distinctive advantages of: (1) it is rigorous thermodynamics-based model; (2) it is formulated in terms of thickness-averaged material properties which are easily measureable; and (3) it reduces 3D modeling to 2D leading to a very significant reduction of computation efforts. As an application, we employ the new approach in the study of liquid water flooding in the cathode of a polymer electrolyte fuel cell (PEFC). To highlight the advantages of the present model, we compare the results of water distribution with those obtained from the traditional 3D Darcy-based modeling. Finally, it is worth noting that, for specific case studies, a number of material properties in the model need to be determined experimentally, such as mass and heat exchange coefficients between neighboring layers. Fig. 1: Schematic representation of three thin porous layers, which may exchange mass, momentum, and energy. Also, a typical averaging domain (REV) is shown. Note that the layer thickness and thus the REV height can be spatially variable. Also, in reality, the layers are tightly stacked and there is no gap between them.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Water softening process

DOEpatents

Sheppard, John D.; Thomas, David G.

1976-01-01

This invention involves an improved process for softening hard water which comprises selectively precipitaing CaCO.sub.3 to form a thin layer thereof, increasing the pH of said water to precipitate magnesium as magnesium hydroxide and then filtering the resultant slurry through said layer. The CaCO.sub.3 layer serves as a thin permeable layer which has particularly useful application in cross-flow filtration applications.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Isolation of Three Components from Spearmint Oil: An Exercise in Column and Thin-Layer Chromatography

ERIC Educational Resources Information Center

Davies, Don R.; Johnson, Todd M.

2007-01-01

A simple experiment for undergraduate organic chemistry students to separate a colorless mixture using column chromatography and then monitor the outcome of the separation using thin-layer chromatography (TLC) and infrared spectroscopy(IR) is described. The experiment teaches students the principle and techniques of column and thin-layer…

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Magnetoelastic sensor for characterizing properties of thin-film/coatings

NASA Technical Reports Server (NTRS)

Bachas, Leonidas G. (Inventor); Barrett, Gary (Inventor); Grimes, Craig A. (Inventor); Kouzoudis, Dimitris (Inventor); Schmidt, Stefan (Inventor)

2004-01-01

An apparatus for determining elasticity characteristics of a thin-film layer. The apparatus comprises a sensor element having a base magnetostrictive element at least one surface of which is at least partially coated with the thin-film layer. The thin-film layer may be of a variety of materials (having a synthetic and/or bio-component) in a state or form capable of being deposited, manually or otherwise, on the base element surface, such as by way of eye-dropper, melting, dripping, brushing, sputtering, spraying, etching, evaporation, dip-coating, laminating, etc. Among suitable thin-film layers for the sensor element of the invention are fluent bio-substances, thin-film deposits used in manufacturing processes, polymeric coatings, paint, an adhesive, and so on. A receiver, preferably remotely located, is used to measure a plurality of values for magneto-elastic emission intensity of the sensor element in either characterization: (a) the measure of the plurality of values is used to identify a magneto-elastic resonant frequency value for the sensor element; and (b) the measure of the plurality of successive values is done at a preselected magneto-elastic frequency.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

A tsunami deposit from Vancouver Island, Canada ― Geological evidence for the penultimate great Cascadia earthquake?

NASA Astrophysics Data System (ADS)

Tanigawa, K.; Sawai, Y.; Bobrowsky, P. T.; Huntley, D.; Goff, J. R.; Shinozaki, T.

2017-12-01

We examined tsunami deposits within salt marshes at Tofino, Ucluelet and Port Alberni along the west coast of Vancouver Island aligned with the Cascadia Subduction Zone. Previous studies in 1990s reported tsunami deposits associated with the 1964 Alaska, the 1700 Cascadia and older earthquakes from these sites (Clague and Bobrowsky, 1994a; b). However, the ages of older tsunami deposits were not well constrained. We excavated pits and collected salt marsh sediments in 2015 and 2016. Sand layers interbedded within peat and mud deposits occur at widely separated sites on Vancouver Island. Two visible sand layers were observed in Tofino, four in Ucluelet and three in Port Alberni; which is consistent with previous studies. We used a combination of 210Pb, 137Cs and 14C dating to constrain the depositional ages of sand layers. Plant microfossils and insects obtained directly above and below each sand layer were used for radiocarbon dating. Radiocarbon ages indicate that the sand layer prior to the 1700 tsunami sediments was deposited between 550-300 calendar years before present. This depositional age is correlative to the T2 event of the Cascadia Subduction Zone turbidite history (Goldfinger et al., 2012). References: Clague and Bobrowsky (1994a) Quaternary Research, 41, 176-184. Clague and Bobrowsky (1994b) GSA Bulletin 106, 1293-1303. Goldfinger et al. (2012) USGS Professional Paper 1661-F, 170 p.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Temperature dependence of 63Ni-Si betavoltaic microbattery.

PubMed

Yunpeng, Liu; Xiao, Guo; Zhangang, Jin; Xiaobin, Tang

2018-05-01

This paper theoretically presented the temperature effects on the 63 Ni-Si betavoltaic microbattery irradiated by a source with different thicknesses and activity densities at a temperature range 170-340K. Temperature dependences of the monolayer and interbedded 63 Ni-Si betavoltaics at 213.15-333.15K were tested with respect to calculations. Results showed that the higher the thickness, activity density, and average energy of the source, the lower is the betavoltaic performance responds to temperature. With the increase in temperature, the V oc and P max of the upper, lower, and interbedded betavoltaics decreased linearly at low temperatures and decreased exponentially at high temperatures in the experiment. As predicted, the measured V oc and P max sensitivities of the lower betavoltaic with 4.90mCi/cm 2 63 Ni, -2.230mV/K and -1.132%, respectively, were lower than those with 1.96mCi/cm 2 63 Ni, -2.490mV/K and -1.348%, respectively. Compared with the calculated results, the prepared betavoltaics had lower V oc sensitivity and higher P max sensitivity. In addition, the measured V oc sensitivity of the interbedded betavoltaic in series is equal to the sum of those of the upper and lower ones as predicted. Moreover, the measured P max sensitivity of the interbedded betavoltaic is equal to the average of those of the two monolayers. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

NASA Astrophysics Data System (ADS)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

Comparison of reproduce signal and noise of conventional and keepered CoCrTa/Cr thin film media

NASA Astrophysics Data System (ADS)

Sin, Kyusik; Ding, Juren; Glijer, Pawel; Sivertsen, John M.; Judy, Jack H.; Zhu, Jian-Gang

1994-05-01

We studied keepered high coercivity CoCrTa/Cr thin film media with a Cr isolation layer between the CoCrTa storage and an overcoating of an isotropic NiFe soft magnetic layer. The influence of the thickness of the NiFe and Cr layers, and the effects of head bias current on the signal output and noise, were studied using a thin film head. The reproduced signal increased by 7.3 dB, but the signal-to-noise ratio decreased by 4 dB at a linear density of 2100 fr/mm (53.3 kfr/in.) with a 1000 Å thick NiFe keeper layer. The medium noise increased with increasing NiFe thickness and the signal output decreased with decreasing Cr thickness. A low output signal obtained with very thin Cr may be due to magnetic interactions between the keeper layer and magnetic media layer. It is observed that signal distortion and timing asymmetry of the output signals depend on the thickness of the keeper layer and the head bias current. The signal distortion increased and the timing asymmetry decreased as the head bias current was increased. These results may be associated with different permeability of the keeper under the poles of the thin film head due to the superposition of head bias and bit fields.

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; Vignesparamoorthy, Sivaruban; Mueller, Carl; VanKeuls, Fred; Warner, Joseph; Miranda, Felix A.

2001-01-01

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Surface layer formation of LiCoO2 thin film electrodes in non-aqueous electrolyte containing lithium bis(oxalate)borate

NASA Astrophysics Data System (ADS)

Matsui, Masaki; Dokko, Kaoru; Akita, Yasuhiro; Munakata, Hirokazu; Kanamura, Kiyoshi

2012-07-01

Surface layer formation processes on a LiCoO2 thin film electrode in a non-aqueous electrolyte containing lithium bis(oxalate)borate (LiBOB) were investigated using in situ FTIR spectroscopy and X-ray photoelectron spectroscopy (XPS). The in situ FTIR spectra of the electrolyte solution containing LiBOB showed that the adsorption of BOB anions on the electrode surface occurred during the charge process of the LiCoO2 thin film electrode above 4.0 V. XPS analysis for the LiCoO2 thin film electrode charged in an electrolyte containing LiBOB suggested that the adsorbed BOB anions on the electrode surface prevent the continuous decomposition of hexafluorophosphate (PF6) anions resulting in the formation of a very thin surface layer containing organic species, while the LiCoO2 charged in a LiPF6 solution had a relatively thick surface layer containing organic species and inorganic species.

Nanofiber based triple layer hydro-philic/-phobic membrane - a solution for pore wetting in membrane distillation

PubMed Central

Prince, J. A.; Rana, D.; Matsuura, T.; Ayyanar, N.; Shanmugasundaram, T. S.; Singh, G.

2014-01-01

The innovative design and synthesis of nanofiber based hydro-philic/phobic membranes with a thin hydro-phobic nanofiber layer on the top and a thin hydrophilic nanofiber layer on the bottom of the conventional casted micro-porous layer which opens up a solution for membrane pore wetting and improves the pure water flux in membrane distillation. PMID:25377488

Burning Graphene Layer-by-Layer

PubMed Central

Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

2015-01-01

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

Polymer mediated layer-by-layer assembly of different shaped gold nanoparticles.

PubMed

Budy, Stephen M; Hamilton, Desmond J; Cai, Yuheng; Knowles, Michelle K; Reed, Scott M

2017-02-01

Gold nanoparticles (GNPs) have a wide range of properties with potential applications in electronics, optics, catalysis, and sensing. In order to demonstrate that dense, stable, and portable samples could be created for these applications, multiple layers of GNPs were assembled via drop casting on glass substrates by layer-by-layer (LBL) techniques. Two cationic polyelectrolytes, poly(diallyldimethylammonium chloride) and polyethyleneimine, one anionic polyelectrolyte, poly(sodium 4-styrene sulfonate), and one neutral polymer, polyvinylpyrrolidone, were combined with four different shapes of GNPs (spherical, rod, triangular prismatic, and octahedral) to prepare thin films. A subset of these polymer nanoparticle combinations were assembled into thin films. Synthesized GNPs were characterized via dynamic light scattering, UV-vis spectroscopy, and transmission electron microscopy and the LBL thin films were characterized using UV-vis spectroscopy and atomic force microscopy. Sensing applications of the nanoparticles in solution and thin films were tested by monitoring the localized surface plasmon resonance of the GNPs. LBL thin films were prepared ranging from 25 to 100 layers with optical densities at plasmon from 0.5 to 3.0. Sensitivity in solutions ranged from 14 to 1002nm/refractive index units (RIU) and films ranged from 18.8 to 135.1nm/RIU suggesting reduced access to the GNPs within the films. Copyright © 2016 Elsevier Inc. All rights reserved.

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

NASA Astrophysics Data System (ADS)

Zuo, Biao; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping

2016-06-01

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng

2016-06-21

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films,more » with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.« less

Approximate transient and long time limit solutions for the band broadening induced by the thin sidewall-layer in liquid chromatography columns.

PubMed

Broeckhoven, Ken; Desmet, Gert

2007-11-16

Using a combination of both analytical and numerical techniques, approximate analytical expressions have been established for the transient and long time limit band broadening, originating from the presence of a thin disturbed sidewall layer in liquid chromatography columns, including packed, monolithic as well as microfabricated columns. The established expressions can be used to compare the importance of a thin disturbed sidewall layer with that of other radial heterogeneity effects (such as transcolumn packing density variations due to the relief of packing stresses). The expressions are independent of the actual velocity profile inside the layer as long as the disturbed sidewall layer occupies less than 2.5% of the column width.

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

NASA Astrophysics Data System (ADS)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Frontally eluted components procedure with thin layer chromatography as a mode of sample preparation for high performance liquid chromatography quantitation of acetaminophen in biological matrix.

PubMed

Klimek-Turek, A; Sikora, M; Rybicki, M; Dzido, T H

2016-03-04

A new concept of using thin-layer chromatography to sample preparation for the quantitative determination of solute/s followed by instrumental techniques is presented Thin-layer chromatography (TLC) is used to completely separate acetaminophen and its internal standard from other components (matrix) and to form a single spot/zone containing them at the solvent front position (after the final stage of the thin-layer chromatogram development). The location of the analytes and internal standard in the solvent front zone allows their easy extraction followed by quantitation by HPLC. The exctraction procedure of the solute/s and internal standard can proceed from whole solute frontal zone or its part without lowering in accuracy of quantitative analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Thin layer drying of cassava starch using continuous vibrated fluidized bed dryer

NASA Astrophysics Data System (ADS)

Suherman, Trisnaningtyas, Rona

2015-12-01

This paper present the experimental work and thin layer modelling of cassava starch drying in continuous vibrated fluidized bed dryer. The experimental data was used to validate nine thin layer models of drying curve. Cassava starch with 0.21 initial moisture content was dried in different air drying temperature (50°C, 55°C, 60°C, 65°C, 70°C), different weir height in bed (0 and 1 cm), and different solid feed flow (10 and 30 gr.minute-1). The result showed air dryer temperature has a significant effect on drying curve, while the weir height and solid flow rate are slightly. Based on value of R2, χ2, and RMSE, Page Model is the most accurate simulation for thin layer drying model of cassava starch.

Fabrication of nanocrystal ink based superstrate-type CuInS₂ thin film solar cells.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Woong; Min, Byoung Koun

2012-07-05

A CuInS₂ (CIS) nanocrystal ink was applied to thin film solar cell devices with superstrate-type configuration. Monodispersed CIS nanocrystals were synthesized by a colloidal synthetic route and re-dispersed in toluene to form an ink. A spray method was used to coat CIS films onto conducting glass substrates. Prior to CIS film deposition, TiO₂ and CdS thin films were also prepared as a blocking layer and a buffer layer, respectively. We found that both a TiO₂ blocking layer and a CdS buffer layer are necessary to generate photoresponses in superstrate-type devices. The best power conversion efficiency (∼1.45%) was achieved by the CIS superstrate-type thin film solar cell device with 200 and 100 nm thick TiO₂ and CdS films, respectively.

Synthesis and Characterization of Hydrophobic Silica Thin Layer Derived from Methyltrimethoxysilane (MTMS)

NASA Astrophysics Data System (ADS)

Darmawan, Adi; Utari, Riyadini; Eka Saputra, Riza; Suhartana; Astuti, Yayuk

2018-01-01

This study investigated the synthesis and characterization of MTMS hydrophobic silica prepared by sol-gel method. In principle, silica xerogels and silica thin layer were obtained by reacting MTMS in ethanol solvent in some pH variations. The MTMS solution was used to modify the surface of the ceramic plate by dipcoating method to further be calcined at two different temperatures of 350°C and 500°C. The silica xerogels were analysed by FTIR, TGA-DSC and GSA to determine functional group characteristics, thermal properties and pore morphology respectively. Meanwhile, the silica thin layers were analysed their hydrophobic properties using water contact angle measurement and surface roughness determination using SEM. The results showed that the higher the pH used in the MTMS solution, the higher the resulting contact angle. The highest contact angle was obtained at pH 8.12 which reached 94.7° and 79.5° for silica thin layer calcined at 350°C and 500°C, respectively. The TGA results indicated that the methyl group survived up to 400°C and disappeared at 500°C which had implications on silica thin layer hydrophobic nature. GSA result exhibited that the silica xerogel had a close structure with a very low pore volume. While the SEM-EDX results displayed that the silica thin layer prepared at acidic pH had smoother surface morphology and became rough when prepared at an alkaline pH.

Composite lamination method

NASA Technical Reports Server (NTRS)

Dickerson, G. E. (Inventor)

1977-01-01

A process was developed for preparing relatively thick composite laminate structure wherein thin layers of prepreg tapes are assembled, these thin layers are cut into strips that are partially cured, and stacked into the desired thickness with uncured prepreg disposed between each layer of strips. The formed laminate is finally cured and thereafter machined to the desired final dimensions.

Voluminous juvenile lithic fragments in the pumice-fall deposit of the 1108 eruption of Asama volcano: Evidence of repeated compaction and fragmentation in the shallow conduit

NASA Astrophysics Data System (ADS)

Nakamura, M.; Kichise, T.; Yasui, M.; Nagahashi, Y.; Yoshida, T.

2010-12-01

The pumice-fall deposit of the 1108 eruption of Asama volcano, central Japan, contains a large amount of lithic fragments (up to 40 wt%) that are angular, dense, and juvenile. The deposit consists of eight sublayers, comprising three thick layers of pumice (1.0-1.4 g/cm3) containing 5-40 wt% lithic fragments (1.4-2.7 g/cm3) interbedded with two thin pumiceous layers, two thin layers of lapilli-sized lithic fragments, and a volcanic ash layer. The average volume of each sublayer is ~0.01 km3. The large volume of lithic fragments and their occurrence throughout the deposit show that their source lava plugs formed and fragmented continuously during the eruption. The lithic fragments are not coated with vesicular matrix, indicating that the fragments were entrained into mist flows of the eruption columns; i.e., after the magma fragmentation that produced the pumice clasts. The plagioclase microlites in the lithic fragments have a range (55-75 mol%) and frequency distribution of anorthite content similar to those in the pumices, indicating that the lithic fragments and pumices have a similar history of decompression from the magma reservoir to the shallow conduit. The groundmass of the pumices has a porosity approximately ranging from 40% to 60% and positive correlation with groundmass crystallinity; this is consistent with an interpretation that magma with higher porosity is more decompressed and thus crystallized in the shallower conduit. The highest crystallinity of the pumice, of which the groundmass porosity is ca. 60%, coincides with the lowest crystallinity of the lithic fragments. In addition, the pore connectivity of the pumice increases (with increasing porosity) steeply at a groundmass porosity of ca. 60%. These petrographical observations strongly suggest that the lithic fragments are the collapsed and compacted products of magma foam (at a groundmass porosity of ca. 60%) just before it fragmented to become pumices. The lithic fragments often have mosaic texture with healed cracks, suggesting that they were formed by repeated shear-induced fragmentation and welding. The average water contents of the glasses in the groundmass of the lithic fragments and pumices are 0.35 and 0.54 wt%, respectively, corresponding to approximate quench depths of 200 and 300 m, respectively. The average volume of the erupted lithic fragments in each sublayer is equivalent to the volume of a magma plug with a diameter of 200 m and depth of 200 m, which is almost equal to the present crater size of Asama. These genetic and occurrence relations between the lithic fragments and pumices indicate that the magma ascent condition of the 1108 eruption was near the bifurcation boundary between the formations of the lava plug via foam compaction and the eruption column via magma fragmentation. Therefore, the magma ascent rate of the 1108 eruption could be used as a rough criterion for predicting the eruption styles in the future volcanic crisis of Asama.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

Effects of different wetting layers on the growth of smooth ultra-thin silver thin films

NASA Astrophysics Data System (ADS)

Ni, Chuan; Shah, Piyush; Sarangan, Andrew M.

2014-09-01

Ultrathin silver films (thickness below 10 nm) are of great interest as optical coatings on windows and plasmonic devices. However, producing these films has been a continuing challenge because of their tendency to form clusters or islands rather than smooth contiguous thin films. In this work we have studied the effect of Cu, Ge and ZnS as wetting layers (1.0 nm) to achieve ultrasmooth thin silver films. The silver films (5 nm) were grown by RF sputter deposition on silicon and glass substrates using a few monolayers of the different wetting materials. SEM imaging was used to characterize the surface properties such as island formation and roughness. Also the optical properties were measured to identify the optical impact of the different wetting layers. Finally, a multi-layer silver based structure is designed and fabricated, and its performance is evaluated. The comparison between the samples with different wetting layers show that the designs with wetting layers which have similar optical properties to silver produce the best overall performance. In the absence of a wetting layer, the measured optical spectra show a significant departure from the model predictions, which we attribute primarily to the formation of clusters.

Durable high strength cement concrete topping for asphalt roads

NASA Astrophysics Data System (ADS)

Vyrozhemskyi, Valerii; Krayushkina, Kateryna; Bidnenko, Nataliia

2017-09-01

Work on improving riding qualities of pavements by means of placing a thin cement layer with high roughness and strength properties on the existing asphalt pavement were conducted in Ukraine for the first time. Such pavement is called HPCM (High Performance Cementitious Material). This is a high-strength thin cement-layer pavement of 8-9 mm thickness reinforced with metal or polymer fiber of less than 5 mm length. Increased grip properties are caused by placement of stone material of 3-5 mm fraction on the concrete surface. As a result of the research, the preparation and placement technology of high-strength cement thin-layer pavement reinforced with fiber was developed to improve friction properties of existing asphalt pavements which ensures their roughness and durability. It must be emphasized that HPCM is a fundamentally new type of thin-layer pavement in which a rigid layer of 10 mm thickness is placed on a non-rigid base thereby improving riding qualities of asphalt pavement at any season of a year.

Do brooding and polygamy behaviors exist on Cretaceous oviraptoroid dinosaurs of China: a paleobiological perspective

NASA Astrophysics Data System (ADS)

Yang, T.-R.; Cheng, Y.-N.; Yang, K.-M.

2012-04-01

Brooding, parental care, and polygamy represent three different stages in bird's reproduction. The oringin of these behaviors is still in debate. Several samples excavated from China strengthen the phylogenetic relationship between birds and dinosaurs, for example, feathered dinosaurs, paired-eggs in pelvic region of an oviraptorid dinosaur, and small theropod fossils. Previous studies in past two decades, including an oviraptor sitting on a clutch and comparison of the ratio of clutch-volume to adult-body-size between Aves and Mesozoic dinosaurs, proposed that these behaviors had appeared on some Cretaceous theropods (e.g., oviraptor and troodon). These researches also indicate the possibility of endothermy and male care first. In conclusion, this reproduction strategy might support females having more remnant energy to build a larger clutch contributed eggs from multiple females, and brooded by males only. From our cluster analysis through paleoecological perspectives, the eggs in Cretaceous oviraptor's nest should not be corporately laid by multiple females. In morphological observation, the fossilized clutches from Ganzhou, Jiangxi, Mainland China, are 2-layered interbeded with matrix of reddish-brown siltstone or clays. The inner-layer eggs are hampered from directly contacting with adult dinosaurs body. Furthermore, the blunt ends of the eggs point to the center, and incline away forming a mound-shape nest, which is completely different from those of precocial and male-caring megapode. The ornamentation of eggshell surface and microstructures from thin sections of eggs from oviraptors and ostrich (Struthioniformes) are totally different. Comparison of thickness in different part of oviraptor's egg also reveal possible physiological structure in the egg and ecological behaviors. The detailed comparison implies that the Mesozoic oviraptoroid dinosaurs hold absolutely different incubation and caring behaviors from extant birds. We propose an alternative hypothesis herein suggesting that the paternal care and brooding behaviors not originated from Mesozoic clade of dinosaurs, which didn't brood their clutch and show polygamy behaviors, either. The oviraptors dinosaurs adults laid pair eggs each time, arrange them toroidally, buried them in a substrate, and then superpose another layer of eggs. Oviraptoroid dinosaurs probably guard their exquisite nests without caring and egg-rotation behaviors, just alike to extant crocodilians which belong to the same clade of Archosaur Reptiles.

The Pioneer Ultramafic Complex of the Barberton Greenstone Belt, South Africa

NASA Astrophysics Data System (ADS)

Cooper, M. R.; Byerly, G. R.; Lowe, D. R.; Thompson, M. E.

2005-12-01

The 3.55-3.22 Ga Barberton Greenstone Belt is an approximately 100km x 30km northeast trending, isoclinally folded, volcanic and sedimentary succession surrounded by intrusive granitic rocks. It is perhaps Earth's best preserved mid-Archean supracrustal sequence and also among the most magnesian, making it an ideal location for studying compositionally distinct rocks of the Archean, such as komatiites. The Pioneer Ultramafic Complex has been interpreted as a komatiitic intrusion but we argue that it is a sequence of layered komatiitic flows and interbedded tuffs correlative with other komatiitic extrusive units of the 3.29 Ga Weltevreden Formation, the uppermost formation of the Onverwacht Group. The Pioneer Ultramafic Complex contains at least 900m of section in the study area, including at least 5 flow sets, with individual flows up to 100 m thick, sections of tuff up to 100m thick and additional thinner tuff units. The base of the sequence is in fault contact with the Sawmill Ultramafic Complex, which is similar to and perhaps correlative with the Pioneer. The top of the sequence is bounded by the Moodies Fault and slightly younger sedimentary rocks of the Fig Tree and Moodies Groups. Typical flows of the Pioneer have highly serpentinized olivine-rich cumulate bases, fresh olivine bearing peridotitic lithologies in central portions, and increasing pyroxene content, pyroxene size, and elongation of grains toward the flow tops. Three of the five flows are capped with random and/or oriented spinifex layers. The tuffs within this and other layered ultramafic complexes of the Barberton Greenstone Belt are mostly fine grained, slaty serpentinites that were previously interpreted as bedding horizontal zones of shearing. However, rare preservation of angular and vesicular lapilli, and more commonly cross-stratification in finer grained layers, provide strong evidence that these layers represent tuffs. High chromium and other trace element contents suggest they are komatiitic tuffs likely co-magmatic with the interbedded komatiitic lava flows. Compositions of fresh olivines range between 91 to 93 percent forsterite, indicating a komatiitic melt composition. In addition to olivine phenocrysts, fresh chromite, orthopyroxene, pigeonite, and augite are all present as smaller intercumulus crystals or microphenocrysts. The pyroxenes have Mg numbers up to 89 and Al/Ti ratios approximately 10-15. The latter are consistent with the Al/Ti ratios of 20-30 found within the komatiites and tuffs analyzed thus far. These ratios indicate the flows belong to the aluminium undepleted group of komatiites. The rock and mineral chemistry of these flows allow us to determine melt compositions and explore correlations and relationships with other komatiitic flows and layered ultramafic complexes of the Barberton Greenstone Belt. Field studies of these flows help characterize an Archean igneous complex believed to represent shallow marine deposition of komatiitic tuffs and coeval emplacement of thick vertically differentiated komatiitic flows.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Method of forming ultra thin film devices by vacuum arc vapor deposition

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

NASA Astrophysics Data System (ADS)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1983-01-01

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Coarse-sediment bands on the inner shelf of southern Monterey Bay, California

USGS Publications Warehouse

Hunter, R.E.; Dingler, J.R.; Anima, R.J.; Richmond, B.M.

1988-01-01

Bands of coarse sand that trend parallel to the shore, unlike the approximately shore-normal bands found in many inner shelf areas, occur in southern Monterey Bay at water depths of 10-20 m, less than 1 km from the shore. The bands are 20-100 m wide and alternate with bands of fine sand that are of similar width. The coarse-sand bands are as much as 1 m lower than the adjacent fine-sand bands, which have margins inclined at angles of about 20??. The mean grain sizes of the coarse and fine sand are in the range of 0.354-1.0 mm and 0.125-0.354 mm, respectively. Wave ripples that average about 1 m in spacing always occur in the coarse-sand bands. Over a period of 3 yrs, the individual bands moved irregularly and changed in shape, as demonstrated by repeated sidescan sonar surveys and by the monitoring of rods jetted into the sea floor. However, the overall pattern and distribution of the bands remained essentially unchanged. Cores, 0.5-1.0 m long, taken in coarse-sand bands contain 0.2-0.5 m of coarse sand overlying fine sand or interbedded fine and coarse sand. Cores from fine-sand bands have at least one thin coarse sand layer at about the depth of the adjacent coarse-sand band. None of the cores revealed a thick deposit of coarse sand. The shore-parallel bands are of unknown origin. Their origin is especially puzzling because approximately shore-normal bands are present in parts of the study area and immediately to the north. ?? 1988.

Depositional settings, correlation, and age carboniferous rocks in the western Brooks Range, Alaska

USGS Publications Warehouse

Dumoulin, Julie A.; Harris, Anita G.; Blome, Charles D.; Young, Lorne E.

2004-01-01

The Kuna Formation (Lisburne Group) in northwest Alaska hosts the Red Dog and other Zn-Pb-Ag massive sulfide deposits in the Red Dog district. New studies of the sedimentology and paleontology of the Lisburne Group constrain the setting, age, and thermal history of these deposits. In the western and west-central Brooks Range, the Lisburne Group includes both deep- and shallow-water sedimentary facies and local volcanic rocks that are exposed in a series of thrust sheets or allochthons. Deep-water facies in the Red Dog area (i.e., the Kuna Formation and related rocks) are found chiefly in the Endicott Mountains and structurally higher Picnic Creek allochthons. In the Red Dog plate of the Endicott Mountains allochthon, the Kuna consists of at least 122 m of thinly interbedded calcareous shale, calcareous spiculite, and bioclastic supportstone (Kivalina unit) overlain by 30 to 240 m of siliceous shale, mudstone, calcareous radiolarite, and calcareous lithic turbidite (Ikalukrok unit). The Ikalukrok unit in the Red Dog plate hosts all massive sulfide deposits in the area. It is notably carbonaceous, is generally finely laminated, and contains siliceous sponge spicules and radiolarians. The Kuna Formation in the Key Creek plate of the Endicott Mountains allochthon (60–110 m) resembles the Ikalukrok unit but is unmineralized and has thinner carbonate layers that are mainly organic-rich dolostone. Correlative strata in the Picnic Creek allochthon include less shale and mudstone and more carbonate (mostly calcareous spiculite). Conodonts and radiolarians indicate an age range of Osagean to early Chesterian (late Early to Late Mississippian) for the Kuna in the Red Dog area. Sedimentologic, faunal, and geochemical data imply that most of the Kuna formed in slope and basin settings characterized by anoxic or dysoxic bottom water and by local high productivity.

Emplacement mechanisms of the South Kona slide complex, Hawaii Island: Sampling and observations by remotely operated vehicle Kaiko

USGS Publications Warehouse

Yokose, H.; Lipman, P.W.

2004-01-01

Emplacement of a giant submarine slide complex, offshore of South Kona, Hawaii Island, was investigated in 2001 by visual observation and in-situ sampling on the bench scarp and a megablock, during two dives utilizing the Remotely Operated Vehicle (ROV) Kaiko and its mother ship R/V Kairei. Topography of the bench scarp and megablocks were defined in 3-D perspective, using high-resolution digital bathymetric data acquired during the cruise. Compositions of 34 rock samples provide constraints on the landslide source regions and emplacement mechanisms. The bench scarp consists mainly of highly fractured, vesiculated, and oxidized a-a lavas that slumped from the subaerial flank of ancestral Mauna Loa. The megablock contains three units: block facies, matrix facies, and draped sediment. The block facies contains hyaloclastite interbedded with massive lava, which slid from the shallow submarine flank of ancestral Mauna Loa, as indicated by glassy groundmass of the hyaloclastite, low oxidation state, and low sulfur content. The matrix facies, which directly overlies the block facies and is similar to a lahar deposit, is thought to have been deposited from the water column immediately after the South Kona slide event. The draped sediment is a thin high-density turbidite layer that may be a distal facies of the Alika-2 debris-avalanche deposit; its composition overlaps with rocks from subaerial Mauna Loa. The deposits generated by the South Kona slide vary from debris avalanche deposit to turbidite. Spatial distribution of the deposits is consistent with deposits related to large landslides adjacent to other Hawaiian volcanoes and the Canary Islands. ?? Springer-Verlag 2004.

Electrochemical planarization

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1993-10-26

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Use of screenings to produce HMA mixtures

DOT National Transportation Integrated Search

2002-10-01

Thin-lift hot mix asphalt (HMA) layers are utilized in almost every maintenance and rehabilitation application. These mix types require smaller maximum particle sizes than most conventional HMA surface layers. Although the primary functions of thin-l...

[Ascending one-dimensional thin layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

A brief review of the literature on chromatography in forensic haematology is followed by a report of the results obtained by using ascending one-dimensional thin layer chromatography in specific blood diagnosis.

Flat-lying semiconductor-insulator interfacial layer in DNTT thin films.

PubMed

Jung, Min-Cherl; Leyden, Matthew R; Nikiforov, Gueorgui O; Lee, Michael V; Lee, Han-Koo; Shin, Tae Joo; Takimiya, Kazuo; Qi, Yabing

2015-01-28

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.

Bias of shear wave elasticity measurements in thin layer samples and a simple correction strategy.

PubMed

Mo, Jianqiang; Xu, Hao; Qiang, Bo; Giambini, Hugo; Kinnick, Randall; An, Kai-Nan; Chen, Shigao; Luo, Zongping

2016-01-01

Shear wave elastography (SWE) is an emerging technique for measuring biological tissue stiffness. However, the application of SWE in thin layer tissues is limited by bias due to the influence of geometry on measured shear wave speed. In this study, we investigated the bias of Young's modulus measured by SWE in thin layer gelatin-agar phantoms, and compared the result with finite element method and Lamb wave model simulation. The result indicated that the Young's modulus measured by SWE decreased continuously when the sample thickness decreased, and this effect was more significant for smaller thickness. We proposed a new empirical formula which can conveniently correct the bias without the need of using complicated mathematical modeling. In summary, we confirmed the nonlinear relation between thickness and Young's modulus measured by SWE in thin layer samples, and offered a simple and practical correction strategy which is convenient for clinicians to use.

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

PubMed

Kim, Seong Keun; Han, Sora; Jeon, Woojin; Yoon, Jung Ho; Han, Jeong Hwan; Lee, Woongkyu; Hwang, Cheol Seong

2012-09-26

Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, Mahlon S.

1997-01-01

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, M.S.

1997-06-24

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers. 9 figs.

Lithofacies variability in the Lower Khvalynian sediments of the North Caspian Sea region.

NASA Astrophysics Data System (ADS)

Makshaev, Radik; Svitoch, Aleksandr

2016-04-01

The Early Khvalynian period (~15 500-12 500 cal years B.P.) is characterized by continuous dynamic changes in North Caspian Sea region environment, which has been confirmed by numerous data obtained during the lithofacies analysis of its key sections. Lithofacies complex of the North Caspian Sea region contains four subfacies - clayey, laminated, sandy-clayey and aleurite-clayey. Clayey facie is characterized by absolutely clayey structure with massive nonlamellated or subfissile dark-brown clays and rarely contains thin aleurite layers. This subfacie is one of the most widespread in the North Caspian Sea region. Clayey facies are typical for the most of the key sections in the Middle Volga (Bykovo, Torgun, Rovnoe, Novoprivolnoe, Chapaevka), Lower Volga (Svetly Yar) and on the left side of the Volga River valley (Verkhny Baskunchak, Krivaya Loshchina, Bolshoy Liman). Deep paleodepressions of the Lower Volga and the left side of the Volga River valley are also characterized by the maximum of the average clays thickness, which can reach up to 10 m. Sandy-clayey subfacie is characterized by stratified structure with horizontal and lenticular lamination of clays with sandy-aleuritic interlayers. The average thickness of sand layers is 2-5 cm. At most of the key sections thickness of clay layers is up to twice larger than the sands layers and only on depressions' periphery can be exceeded by some terrigenous interlayers. Sandy-aleuritic parts of clays have different mineral structure. Light suite is dominated by quartz and feldspar with some debris of heavy minerals, glauconite and calcite. Fraction of the heavy minerals contains titano ferrite, epidote, granite, zircon, amphibole, rutile, disthene, tourmaline, sillimanite. Layered subfacie is the most abundant among the chocolate clays and is widespread in the Lower Volga River region and the Ural River valley, but sporadic in Kalmykia and the Volga Delta. Sandy-clayey and aleurit-clayey subfacies have rare distribution. Sandy-clayey subfacie (Raigorog section) contains two patches of clays, that are interbedded by thick sandy layer with khvalynian mollusks shells. Aleurite-clayey subfacie is typical for the upper part of the Volgian estuary (Chapaevka, Torgun). During the Early Khvalynian transgression only clayey-aleuritic deposits, which represent the Early Khvalynian period, accumulated in flooded territory of the Volga river valley. On the most part of investigated territory facies are presented by clays (chocolate clays), which are predominantly located in the middle part of the Early Khvalynian sections and constrained by sands with mollusk shells on its bottom and top. These facies are very common in the bottom part of the sections in the Lower Volga region, while in the Middle Volga region clays are dominated in all segments of the Khvalynian strata. But these clays can't be classified into an individual stratigraphic layer as they don't contain index mollusks and have different stratigraphic location. This work is supported by the RFBR (Project 14-05-00227) and the RSCF (Project 16-17-10103).

Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

2018-05-01

Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning.

PubMed

Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

2015-06-26

The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning

NASA Astrophysics Data System (ADS)

Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

2015-06-01

The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Fabrication of Organic Thin Film Transistors Using Layer-By-Layer Assembly (Preprint)

DTIC Science & Technology

2007-03-01

thin-film transistors ( TFTs ) have received considerable attention as a low- cost, light-weight, flexible alternative to traditional amorphous silicon...Previous studies have investigated the use of a number of materials for both the active layer and the gate dielectric in various TFT architectures. These...performance. Conjugated small molecules, such as pentacene, or polymers, such as poly(3- hexylthiophene), are commonly used as the active layer in organic TFT

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

DOEpatents

Gessert, T.A.

1999-06-01

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

DOEpatents

Gessert, Timothy A.

1999-01-01

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Thin-film solar cell fabricated on a flexible metallic substrate

DOEpatents

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

DOEpatents

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Synthesis of bimetallic nanostructures by nanosecond laser ablation of multicomponent thin films in water

NASA Astrophysics Data System (ADS)

Nikov, R. G.; Nedyalkov, N. N.; Atanasov, P. A.; Karashanova, D. B.

2018-03-01

The paper presents results on nanosecond laser ablation of thin films immersed in a liquid. The thin films were prepared by consecutive deposition of layers of different metals by thermal evaporation (first layer) and classical on-axis pulsed laser deposition (second layer); Ni/Au, Ag/Au and Ni/Ag thin films were thus deposited on glass substrates. The as-prepared films were then placed at the bottom of a glass vessel filled with double distilled water and irradiated by nanosecond laser pulses delivered by a Nd:YAG laser system at λ = 355 nm. This resulted in the formation of colloids of the thin films’ material. We also compared the processes of ablation of a bulk target and a thin film in the liquid by irradiating a Au target and a Au thin film by the same laser wavelength and fluence (λ = 355 nm, F = 5 J/cm2). The optical properties of the colloids were evaluated by optical transmittance measurements in the UV– VIS spectral range. Transmission electron microscopy was employed to estimate the particles’ size distribution.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

NASA Astrophysics Data System (ADS)

Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

Thin film absorber for a solar collector

DOEpatents

Wilhelm, William G.

1985-01-01

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Organic photovoltaic cells utilizing ultrathin sensitizing layer

DOEpatents

Rand, Barry P [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2011-05-24

A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

In-depth evolution of chemical states and sub-10-nm-resolution crystal orientation mapping of nanograins in Ti(5 nm)/Au(20 nm)/Cr(3 nm) tri-layer thin films

NASA Astrophysics Data System (ADS)

Zhu, Xiaoli; Todeschini, Matteo; Bastos da Silva Fanta, Alice; Liu, Lintao; Jensen, Flemming; Hübner, Jörg; Jansen, Henri; Han, Anpan; Shi, Peixiong; Ming, Anjie; Xie, Changqing

2018-09-01

The applications of Au thin films and their adhesion layers often suffer from a lack of sufficient information about the chemical states of adhesion layers and about the high-lateral-resolution crystallographic morphology of Au nanograins. Here, we demonstrate the in-depth evolution of the chemical states of adhesive layers at the interfaces and the crystal orientation mapping of gold nanograins with a lateral resolution of less than 10 nm in a Ti/Au/Cr tri-layer thin film system. Using transmission electron microscopy, the variation in the interdiffusion at Cr/Au and Ti/Au interfaces was confirmed. From X-ray photoelectron spectroscopy (XPS) depth profiling, the chemical states of Cr, Au and Ti were characterized layer by layer, suggesting the insufficient oxidation of the adhesive layers. At the interfaces the Au 4f peaks shift to higher binding energies and this behavior can be described by a proposed model based on electron reorganization and substrate-induced final-state neutralization in small Au clusters supported by the partially oxidized Ti layer. Utilizing transmission Kikuchi diffraction (TKD) in a scanning electron microscope, the crystal orientation of Au nanograins between two adhesion layers was non-destructively characterized with sub-10 nm spatial resolution. The results provide nanoscale insights into the Ti/Au/Cr thin film system and contribute to our understanding of its behavior in nano-optic and nano-electronic devices.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode.

PubMed

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-02-24

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tesfaye, Meron; MacDonald, Andrew N.; Dudenas, Peter J.

Local gas transport limitation attributed to the ionomer thin-film in the catalyst layer is a major deterrent to widespread commercialization of polymer-electrolyte fuel cells. So far functionality and limitations of these thin-films have been assumed identical in the anode and cathode. In this study, Nafion ionomer thin-films on platinum(Pt) support were exposed to H 2 and air as model schemes, mimicking anode and cathode catalyst layers. Findings indicate decreased swelling, increased densification of ionomer matrix, and increased humidity-induced aging rates in reducing environment, compared to oxidizing and inert environments. Observed phenomenon could be related to underlying Pt-gas interaction dictating Pt-ionomermore » behavior. Presented results could have significant implications about the disparate behavior of ionomer thin-film in anode and cathode catalyst layers.« less

Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Sainju, Deepak

Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the intrinsic temperature dependence of these properties and parameters. One of the major achievements of this dissertation research is the characterization of the thickness and optical properties of the interface layer formed between the silver and zinc oxide layers in a back-reflector structure used in thin film photovoltaics. An understanding of the impact of these thin film material properties on solar cell device performance has been complemented by applying reflectance and transmittance spectroscopy as well as simulations of cell performance.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Optimization of rotational speed for growing BaFe12O19 thin films using spin coating

NASA Astrophysics Data System (ADS)

Budiawanti, S.; Soegijono, B.; Mudzakir, I.; Suharno, Fadillah, L.

2017-07-01

Barium ferrite (BaFe12O19, BaM) thin films were fabricated by the spin coating of precursors obtained by using a sol-gel method. The effects of the rotational speed on the spin-coating process for growing a BaM thin film were investigated in this study. Coated films were heat-deposited at different rotational speeds ranging from 2000 to 4000 rpm, while the number of layers was set to nine. Further, the effect of the number of layers on the growth of BaM thin films was discussed. For this purpose, we take the layers number 1 to 12 and take the constant rotational speed of 3000 rpm. All the film were characterized using X-Ray diffraction, Scanning Electron microscope, and Energy-dispersive X-Ray spectroscopy and Vibrating Sample Magnetometer. It was found that by increasing the rotational speed the amount of material deposited on the Si substrate decreased. The measured grain size of the BaM thin film was nearly similar for three three different rotational speeds. However, the grain size was found to increase the number of layers.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Study of carbonate concretions using imaging spectroscopy in the Frontier Formation, Wyoming

NASA Astrophysics Data System (ADS)

de Linaje, Virginia Alonso; Khan, Shuhab D.; Bhattacharya, Janok

2018-04-01

Imaging spectroscopy is applied to study diagenetic processes of the Wall Creek Member of the Cretaceous Frontier Formation, Wyoming. Visible Near-Infrared and Shortwave-Infrared hyperspectral cameras were used to scan near vertical and well-exposed outcrop walls to analyze lateral and vertical geochemical variations. Reflectance spectra were analyzed and compared with high-resolution laboratory spectral and hyperspectral imaging data. Spectral Angle Mapper (SAM) and Mixture Tuned Matched Filtering (MTMF) classification algorithms were applied to quantify facies and mineral abundances in the Frontier Formation. MTMF is the most effective and reliable technique when studying spectrally similar materials. Classification results show that calcite cement in concretions associated with the channel facies is homogeneously distributed, whereas the bar facies was shown to be interbedded with layers of non-calcite-cemented sandstone.

Deformation, geochemistry, and origin of massive sulfide deposits, Gossan lead district, Virginia.

USGS Publications Warehouse

Gair, J.E.; Slack, J.F.

1984-01-01

Lenses and layers of massive sulphides comprise a discontinuous horizon in the late Proterozoic metasedimentary Ashe formation. The folded and brecciated sulphides include pyrrhotite, minor chalcopyrite, sphalerite and pyrite, and rare arsenopyrite and galena. The deposits were mined for supergene copper, later for gossan iron, and finally for sulphur. The Ashe formation is interpreted to be marine turbidites, and contains lenses of mafic rocks of probable tholeiitic basalt parentage. Mineralogically and chemically distinctive rocks - for the Ashe formation - are interbedded with the sulphides and may represent metamorphosed alteration zones and/or mixed chemical and clastic sediments. The sulphide deposits are interpreted as syngenetic sediments, modified by deformation during metamorphism. Their deposition occurred in a deep, elongate marine basin overlying a crustal rift zone.-G.J.N.

Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

NASA Astrophysics Data System (ADS)

Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

2018-05-01

Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Hydrogeologic atlas of aquifers in Indiana

USGS Publications Warehouse

Fenelon, Joseph M.; Bobay, K.E.; Greeman, T.K.; Hoover, M.E.; Cohen, D.A.; Fowler, K.K.; Woodfield, M.C.; and Durbin, J. M.

1994-01-01

Aquifers in 12 water-management basins of Indiana are identified in a series of 104 hydrogeologic sections and 12 maps that show the thickness and configuration of aquifers. The vertical distribution of water-bearing units and a generalized potentiometric profile are shown along 3,500 miles of section lines that were constructed from drillers' logs of more than 4,200 wells. The horizontal scale of the sections is 1:125,000. Maps of aquifers showing the areal distribution of each aquifer type were drawn at a scale of 1:500,000. Unconsolidated aquifers are the most widely used aquifers in Indiana and include surficial, buried, and discontinuous layers of sand and gravel. Most of the surficial sand and gravel is in large outwash plains in northern Indiana and along the major rivers. Buried sand and gravel aquifers are interbedded with till deposits in much of the northern two-thirds of Indiana. Discontinuous sand and gravel deposits are present as isolated lenses, primarily in glaciated areas. The bedrock aquifers generally have lower yields than most of the sand and gravel aquifers; however, bedrock aquifers are areally widespread and are an important source of water. Bedrock aquifer types consist of carbonates; sandstones; complexly interbedded sandstones, siltstones, shales, limestones, and coals; and an upper weathered zone in low permeability rock. Carbonate aquifers underlie about one-half of Indiana and are the most productive of the bedrock aquifers. The other principal bedrock aquifer type, sandstone, underlies large areas in the southwestern one-fifth of Indiana. No aquifer is known to be present in the southeastern corner of Indiana.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Using atomistic simulations to model cadmium telluride thin film growth

NASA Astrophysics Data System (ADS)

Yu, Miao; Kenny, Steven D.

2016-03-01

Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

Marangoni-Benard Convection in a Evaporating Liquid Thin Layer

NASA Technical Reports Server (NTRS)

Chai, An-Ti; Zhang, Nengli

1996-01-01

Marangoni-Benard convection in evaporating liquid thin layers has been investigated through flow visualization and temperature profile measurement. Twelve liquids, namely ethyl alcohol, methanol, chloroform, acetone, cyclohexane, benzine, methylene chloride, carbon tetrachloride, ethyl acetate, n-pentane, silicone oil (0.65 cSt.), and freon-113, were tested and convection patterns in thin layers of these samples were observed. Comparison among these tested samples shows that some liquids are sensitive to surface contamination from aluminum powder but some are not. The latter is excellent to be used for the investigation of surface-tension driven convection through visualization using the tracer. Two sample liquids, alcohol and freon-113 were particularly selected for systematic study. It was found that the wavelength of Benard cells would not change with thickness of the layer when it evaporates at room temperature. Special attention was focused on cases in which a liquid layer was cooled from below, and some interesting results were obtained. Convection patterns were recorded during the evaporation process and the patterns at certain time frame were compared. Benard cells were observed in thin layers with a nonlinear temperature profile and even with a zero or positive temperature gradient. Wavelength of the cells was found to increase as the evaporation progressed.

Solid oxide fuel cell having monolithic core

DOEpatents

Ackerman, John P.; Young, John E.

1984-01-01

A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween, and each interconnect wall consists of thin layers of the cathode and anode materials sandwiching a thin layer of interconnect material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick.

Exciton-dominated dielectric function of atomically thin MoS 2 films

DOE PAGES

Yu, Yiling; Yu, Yifei; Cai, Yongqing; ...

2015-11-24

We systematically measure the dielectric function of atomically thin MoS 2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS 2 films and its contribution to the dielectricmore » function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS 2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.« less

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2013-07-23

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Natural fault and fracture network versus anisotropy in the Lower Paleozoic rocks of Pomerania (Poland)

NASA Astrophysics Data System (ADS)

Haluch, Anna; Rybak-Ostrowska, Barbara; Konon, Andrzej

2017-04-01

Knowledge of the anisotropy of rock fabric, geometry and distribution of the natural fault and fracture network play a crucial role in the exploration for unconventional hydrocarbon recourses. Lower Paleozoic rocks from Pomerania within the Polish part of Peri-Baltic Basin, as prospective sequences, can be considered a laboratory for analysis of fault and fracture arrangement in relation to the mineral composition of the host rocks. A microstructural study of core samples from five boreholes in Pomerania indicate that the Silurian succession in the study area is predominantly composed of claystones and mudstones interbedded with thin layers of tuffites. Intervals with a high content of detrital quartz or diagenetic silica also occur. Most of the Silurian deposits are abundant in pyrite framboids forming layers or isolated small concretions. Early diagenetic carbonate concretions are also present. The direction and distribution of natural faults and fractures have resulted not only from paleostress. Preliminary study reveals that the fault and fracture arrangement is related to the mechanical properties of the host rocks that depend on their fabric and mineralogical composition: subvertical fractures in mudstones and limestones show steeper dips than those within the more clayey intervals; bedding-parallel fractures occur within organic-rich claystones and along the boundaries between different lithologies; tuffites and radiolaria-bearing siliceous mudstones are more brittle and show denser nets of fractures or wider mineral apertures; and, fracture refraction is observed at competence contrast or around spherical concretions. The fault and fracture mineralization itself is prone to the heterogenity of the rock profile. Thus, fractures infilled with calcite occur in all types of the studied rocks, but mineral growth is syntaxial within marly mudstones because of chemical uniformity, and antitaxial within sillicous mudstones. Fractures infilled with quartz are restricted to tuffites and claystones with biogenic silica. Matching the complex microstructural and mineralogical data with the geomechanical analysis of the host rocks will be the base for further studies on induced fault and fracture development. The study was supported by grant no.: 13-03-00-501-90-472946, funded by the National Centre for Research and Development (NCBiR)

Observations of metal concentrations in E-region sporadic thin layers using incoherent-scatter radar

NASA Astrophysics Data System (ADS)

Suzuki, Nobuhiro

This thesis has used incoherent-scatter radar data from the facility at Sondrestrom, Greenland to determine the ion mass values inside thin sporadic-E layers in the lower ionosphere. Metallic positively-charged ions of meteoric origin are deposited in the earth's upper atmosphere over a height range of about 85-120 km. Electric fields and neutral-gas (eg N2, O, O2) winds at high latitudes may produce convergent ion dynamics that results in the re-distribution of the background altitude distribution of the ions to form thin (1-3 km) high-density layers that are detectable with radar. A large database of experimental radar observations has been processed to determine ion mass values inside these thin ion layers. The range resolution of the radar was 600 meters that permitted mass determinations at several altitude steps within the layers. Near the lower edge of the layers the ion mass values were in the range 20-25 amu while at the top portion of the layers the mass values were generally in the range 30-40 amu. The numerical values are consistent with in-situ mass spectrometer data obtained by other researchers that suggest these layers are mainly composed of a mixture or Mg +, Si+, and Fe + ions. The small tendency for heavier ions to reside at the top portion of the layers is consistent with theory. The results have also found new evidence for the existence of complex-shaped multiple layers; the examples studied suggest similar ion mass values in different layers that in some cases are separated in altitude by several km.

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

Thin layer asphaltic concrete density measuring using nuclear gages.

DOT National Transportation Integrated Search

1989-03-01

A Troxler 4640 thin layer nuclear gage was evaluated under field conditions to determine if it would provide improved accuracy of density measurements on asphalt overlays of 1-3/4 and 2 inches in thickness. Statistical analysis shows slightly improve...

High-performance thin layer chromatography to assess pharmaceutical product quality.

PubMed

Kaale, Eliangiringa; Manyanga, Vicky; Makori, Narsis; Jenkins, David; Michael Hope, Samuel; Layloff, Thomas

2014-06-01

To assess the sustainability, robustness and economic advantages of high-performance thin layer chromatography (HPTLC) for quality control of pharmaceutical products. We compared three laboratories where three lots of cotrimoxazole tablets were assessed using different techniques for quantifying the active ingredient. The average assay relative standard deviation for the three lots was 1.2 with a range of 0.65-2.0. High-performance thin layer chromatography assessments are yielding valid results suitable for assessing product quality. The local pharmaceutical manufacturer had evolved the capacity to produce very high quality products. © 2014 John Wiley & Sons Ltd.

[Thin layer agar represents a cost-effective alternative for the rapid diagnosis of multi-drug resistant tuberculosis].

PubMed

Hernández-Sarmiento, José M; Martínez-Negrete, Milton A; Castrillón-Velilla, Diana M; Mejía-Espinosa, Sergio A; Mejía-Mesa, Gloria I; Zapata-Fernández, Elsa M; Rojas-Jiménez, Sara; Marín-Castro, Andrés E; Robledo-Restrepo, Jaime A

2014-01-01

Using cost-benefit analysis for comparing the thin-layer agar culture method to the standard multiple proportion method used in diagnosing multidrug-resistant tuberculosis (MDR TB). A cost-benefit evaluation of two diagnostic tests was made at the Corporación para Investigaciones Biológicas (CIB) in Medellín, Colombia. 100 patients were evaluated; 10.8% rifampicin resistance and 14.3% isoniazid resistance were found. A computer-based decision tree model was used for cost-effectiveness analysis (Treeage Pro); the thin-layer agar culture method was most cost-effective, having 100% sensitivity, specificity and predictive values for detecting rifampicin and isoniazid resistance. The multiple proportion method value was calculated as being US$ 71 having an average 49 day report time compared to US$ 18 and 14 days for the thin-layer agar culture method. New technologies have been developed for diagnosing tuberculosis which are apparently faster and more effective; their operating characteristics must be evaluated as must their effectiveness in terms of cost-benefit. The present study established that using thin-layer agar culture was cheaper, equally effective and could provide results more quickly than the traditional method. This implies that a patient could receive MDR TB treatment more quickly.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Evidences of Neotectonic Movements Recorded in Fluvial and Lacustrine Deposits of the Niger River in Bamako, Mali

NASA Astrophysics Data System (ADS)

Dembele, N. D. J.

2015-12-01

Two alluvial profiles showing evidences of tectonic movements were discovered along the right bank of the Niger River at Bamako. The first profile of 25 meters thick is composed of a laminated silt layer of about 22 meters, of a gray sand layer of 25 cm and a pebble layer of 2 meters. A layer of 80 cm wide, an intrusive body, crosscuts the silt layers. The Grain size and heavy minerals analysis showed that this vertical layer is different in structure, texture and composition from the other layers. The second profile of about 20 meters is composed of interbedded fluvial gravel and sand deposits. The tectonic evidences found on those layers are of three types: faults and fractures, folds and the intrusion between silts deposits of the sand layers previously presented. The faults and fractures are located mainly on the fluvial gravel and sand deposits, whereas the silts deposits are folded and show some microfaults. The intrusion of a sand layer between the silt layer is a geological process that is not yet well understood but it is believed that this phenomena occurs during earthquakes as the sand layer during such event behave as a liquid. The discovery of such layer testifies that earthquakes used to happen in the area. As they concern only the alluvial deposits, their age should be no more than the Quaternary period. The presence of such tectonic evidences is surprising as Bamako like all the Republic of Mali is located on the west African craton that is supposed to be tectonically stable and their occurrence on Quaternary unconsolidated sediments shows that tectonic movements used to occur on that area during the last 2 millions years or may be less whereas people continue to build houses and other social infrastructures on them without any caution.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Direct numerical simulation of turbulent Rayleigh-Bénard convection in a vertical thin disk

NASA Astrophysics Data System (ADS)

Xu, Wei; Wang, Yin; He, Xiao-Zhou; Yik, Hiu-Fai; Wang, Xiao-Ping; Schumacher, Jorg; Tong, Penger

2017-11-01

We report a direct numerical simulation (DNS) of turbulent Rayleigh-Bénard convection in a thin vertical disk with a high-order spectral element method code NEK5000. An unstructured mesh is used to adapt the turbulent flow in the thin disk and to ensure that the mesh sizes satisfy the refined Groetzbach criterion and a new criterion for thin boundary layers proposed by Shishkina et al. The DNS results for the mean and variance temperature profiles in the thermal boundary layer region are found to be in good agreement with the predictions of the new boundary layer models proposed by Shishkina et al. and Wang et al.. Furthermore, we numerically calculate the five budget terms in the boundary layer equation, which are difficult to measure in experiment. The DNS results agree well with the theoretical predictions by Wang et al. Our numerical work thus provides a strong support for the development of a common framework for understanding the effect of boundary layer fluctuations. This work was supported in part by Hong Kong Research Grants Council.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Thin film solar cell including a spatially modulated intrinsic layer

DOEpatents

Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

1989-03-28

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

Fabrication and Structural Characterization of an Ultrathin Film of a Two-Dimensional-Layered Metal-Organic Framework, {Fe(py)2[Ni(CN)4]} (py = pyridine).

PubMed

Sakaida, Shun; Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2017-07-17

We report the fabrication and characterization of the first example of a tetracyanonickelate-based two-dimensional-layered metal-organic framework, {Fe(py) 2 Ni(CN) 4 } (py = pyridine), thin film. To fabricate a nanometer-sized thin film, we utilized the layer-by-layer method, whereby a substrate was alternately soaked in solutions of the structural components. Surface X-ray studies revealed that the fabricated film was crystalline with well-controlled growth directions both parallel and perpendicular to the substrate. In addition, lattice parameter analysis indicated that the crystal system is found to be close to higher symmetry by being downsized to a thin film.

Treatment of ice cover and other thin elastic layers with the parabolic equation method.

PubMed

Collins, Michael D

2015-03-01

The parabolic equation method is extended to handle problems involving ice cover and other thin elastic layers. Parabolic equation solutions are based on rational approximations that are designed using accuracy constraints to ensure that the propagating modes are handled properly and stability constrains to ensure that the non-propagating modes are annihilated. The non-propagating modes are especially problematic for problems involving thin elastic layers. It is demonstrated that stable results may be obtained for such problems by using rotated rational approximations [Milinazzo, Zala, and Brooke, J. Acoust. Soc. Am. 101, 760-766 (1997)] and generalizations of these approximations. The approach is applied to problems involving ice cover with variable thickness and sediment layers that taper to zero thickness.

Biotechnology Conference: Diagnostics 󈨛 Held in Cambridge, England on 10 and 11 December 1987.

DTIC Science & Technology

1988-05-25

settings. 1 -hour culture confirmation test for herpes (ColorGene DNA hybridization test for HSV confirmation). This test NEW AMPEROMETRIC BIOSENSORS...I Thin Layer Technology: Monolayers to Multi Thin Films ................. 1 Single-Step Immunoassay Systems...if this thin-layer pr•ccss~is probe technolh,,y. and biosensors. The aim of the con- demonstrated in Figure 1 . which shows the disposition of ference

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

NASA Astrophysics Data System (ADS)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1983-01-01

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

High Performance Thin Layer Chromatography.

ERIC Educational Resources Information Center

Costanzo, Samuel J.

1984-01-01

Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

Numerical analysis of the hydrogeologic controls in a layered coastal aquifer system, Oahu, Hawaii, USA

USGS Publications Warehouse

Oki, D.S.; Souza, W.R.; Bolke, E.L.; Bauer, G.R.

1998-01-01

The coastal aquifer system of southern Oahu, Hawaii, USA, consists of highly permeable volcanic aquifers overlain by weathered volcanic rocks and interbedded marine and terrestrial sediments of both high and low permeability. The weathered volcanic rocks and sediments are collectively known as caprock, because they impede the free discharge of groundwater from the underlying volcanic aquifers. A cross-sectional groundwater flow and transport model was used to evaluate the hydrogeologic controls on the regional flow system in southwestern Oahu. Controls considered were: (a) overall caprock hydraulic conductivity; and (b) stratigraphic variations of hydraulic conductivity in the caprock. Within the caprock, variations in hydraulic conductivity, caused by stratigraphy or discontinuities of the stratigraphic units, are a major control on the direction of groundwater flow and the distribution of water levels and salinity. Results of cross-sectional modeling confirm the general groundwater flow pattern that would be expected in a layered coastal system. Ground-water flow is: (a) predominantly upward in the low-permeability sedimentary units; and (b) predominantly horizontal in the high-permeability sedimentary units.

Exploring substrate/ionomer interaction under oxidizing and reducing environments

DOE PAGES

Tesfaye, Meron; MacDonald, Andrew N.; Dudenas, Peter J.; ...

2018-02-09

Local gas transport limitation attributed to the ionomer thin-film in the catalyst layer is a major deterrent to widespread commercialization of polymer-electrolyte fuel cells. So far functionality and limitations of these thin-films have been assumed identical in the anode and cathode. In this study, Nafion ionomer thin-films on platinum(Pt) support were exposed to H 2 and air as model schemes, mimicking anode and cathode catalyst layers. Findings indicate decreased swelling, increased densification of ionomer matrix, and increased humidity-induced aging rates in reducing environment, compared to oxidizing and inert environments. Observed phenomenon could be related to underlying Pt-gas interaction dictating Pt-ionomermore » behavior. Presented results could have significant implications about the disparate behavior of ionomer thin-film in anode and cathode catalyst layers.« less

Method for synthesizing thin film electrodes

DOEpatents

Boyle, Timothy J [Albuquerque, NM

2007-03-13

A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

Electrochemical Atomic Layer Epitaxy of Thin Film CdSe

NASA Astrophysics Data System (ADS)

Pham, L.; Kaleida, K.; Happek, U.; Mathe, M. K.; Vaidyanathan, R.; Stickney, J. L.; Radevic, M.

2002-10-01

Electrochemical atomic layer epitaxy (EC-ALE) is a current developmental technique for the fabrication of compound semiconductor thin films. The deposition of elements making up the compound utilizes surface limited reactions where the potential is less than that required for bulk growth. This growth method offers mono-atomic layer control, allowing the deposition of superlattices with sharp interfaces. Here we report on the EC-ALE formation of CdSe thin films on Au and Cu substrates using an automated flow cell system. The band gap was measured using IR absorption and photoconductivity and found to be consistent with the literature value of 1.74 eV at 300K and 1.85 eV at 20K. The stoichiometry of the thin film was confirmed with electron microprobe analysis and x-ray diffraction.

Characterization of Softmagnetic Thin Layers Using Barkhausen Noise Microscopy

DTIC Science & Technology

2001-04-01

magnetoresistive (MR) sensors softmagnetic thin layer systems are used. Optimal performance of these layers requires homogeneous magnetic properties , especially a...Sendust, used in inductive sensors and nanocrystalline NiFe , used in MR-sensors. In quality correlations to Barkhausen noise parameters were found...Brillouin scattering are frequently used. An important issue is the influence of mechanical properties , e.g. residual stress on the magnetic performance

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Optical sensors and multisensor arrays containing thin film electroluminescent devices

DOEpatents

Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

2001-12-18

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Preliminary results on complex ceramic layers deposition by atmospheric plasma spraying

NASA Astrophysics Data System (ADS)

Florea, Costel; Bejinariu, Costicǎ; Munteanu, Corneliu; Cimpoeşu, Nicanor

2017-04-01

In this article we obtain thin layers from complex ceramic powders using industrial equipment based on atmospheric plasma spraying. We analyze the influence of the substrate material roughness on the quality of the thin layers using scanning electron microscopy (SEM) and X-ray dispersive energy analyze (EDAX). Preliminary results present an important dependence between the surface state and the structural and chemical homogeneity.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Simulation of light in-coupling through an aperture probe to investigate light propagation in a thin layer for opto-electronic application

NASA Astrophysics Data System (ADS)

Ermes, Markus; Lehnen, Stephan; Cao, Zhao; Bittkau, Karsten; Carius, Reinhard

2015-06-01

In thin optoelectronic devices, like organic light emitting diodes (OLED) or thin-film solar cells (TFSC), light propagation, which is initiated by a local point source, is of particular importance. In OLEDs, light is generated in the layer by the luminescence of single molecules, whereas in TFSCs, light is coupled into the devices by scattering at small surface features. In both applications, light propagation within the active layers has a significant impact on the optical device performance. Scanning near-field optical microscopy (SNOM) using aperture probes is a powerful tool to investigate this propagation with a high spatial resolution. Dual-probe SNOM allows simulating the local light generation by an illumination probe as well as the detection of the light propagated through the layer. In our work, we focus on the light propagation in thin silicon films as used in thin-film silicon solar cells. We investigate the light-in-coupling from an illuminating probe via rigorous solution of Maxwell's equations using a Finite-Difference Time-Domain approach, especially to gain insight into the light distribution inside a thin layer, which is not accessible in the experiment. The structures investigated include at and structured surfaces with varying illumination positions and wavelengths. From the performed simulations, we define a "spatial sensitivity" which is characteristic for the local structure and illumination position. This quantity can help to identify structures which are beneficial as well as detrimental to absorption inside the investigated layer. We find a strong dependence of the spatial sensitivity on the surface structure as well as both the absorption coefficient and the probe position. Furthermore, we investigate inhomogeneity in local light propagation resulting from different surface structures and illumination positions.

Relationship of Estimated SHIV Acquisition Time Points During the Menstrual Cycle and Thinning of Vaginal Epithelial Layers in Pigtail Macaques.

PubMed

Kersh, Ellen N; Ritter, Jana; Butler, Katherine; Ostergaard, Sharon Dietz; Hanson, Debra; Ellis, Shanon; Zaki, Sherif; McNicholl, Janet M

2015-12-01

HIV acquisition in the female genital tract remains incompletely understood. Quantitative data on biological HIV risk factors, the influence of reproductive hormones, and infection risk are lacking. We evaluated vaginal epithelial thickness during the menstrual cycle in pigtail macaques (Macaca nemestrina). This model previously revealed increased susceptibility to vaginal infection during and after progesterone-dominated periods in the menstrual cycle. Nucleated and nonnucleated (superficial) epithelial layers were quantitated throughout the menstrual cycle of 16 macaques. We examined the relationship with previously estimated vaginal SHIVSF162P3 acquisition time points in the cycle of 43 different animals repeatedly exposed to low virus doses. In the luteal phase (days 17 to cycle end), the mean vaginal epithelium thinned to 66% of mean follicular thickness (days 1-16; P = 0.007, Mann-Whitney test). Analyzing 4-day segments, the epithelium was thickest on days 9 to 12 and thinned to 31% thereof on days 29 to 32, with reductions of nucleated and nonnucleated layers to 36% and 15% of their previous thickness, respectively. The proportion of animals with estimated SHIV acquisition in each cycle segment correlated with nonnucleated layer thinning (Pearson r = 0.7, P < 0.05, linear regression analysis), but not nucleated layer thinning (Pearson r = 0.6, P = 0.15). These data provide a detailed picture of dynamic cycle-related changes in the vaginal epithelium of pigtail macaques. Substantial thinning occurred in the superficial, nonnucleated layer, which maintains the vaginal microbiome. The findings support vaginal tissue architecture as susceptibility factor for infection and contribute to our understanding of innate resistance to SHIV infection.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

Durable thin film coatings for reflectors used in low earth orbit

NASA Technical Reports Server (NTRS)

Mcclure, Donald J.

1989-01-01

This paper discusses the properties of thin film coatings used to provide a durable reflective surface for solar concentrators used in the solar dynamic system designed for the Space Station. The material system to be used consists of an adhesion promotion layer, a silver reflective layer, and a protective layer of aluminum oxide and silicon dioxide. The performance characteristics of this system are described and compared to those of several alternative systems which use aluminum as the reflective layer.

Temperature dependence of LRE-HRE-TM thin films

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Preventing Thin Film Dewetting via Graphene Capping.

PubMed

Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

2017-09-01

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

Irradiation of industrial enzyme preparations. II. Characterization of fungal pectinase by thin-layer isoelectric focusing and gel filtration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delincee, H.

1978-01-01

Industrial dry fungal pectinase from A. niger was irradiated with doses (up to 1 Mrad) of /sup 60/Co-..gamma..rays effective in reducing microbial contamination. The pectinase was characterized by thin-layer isoelectric focusing and gel filtration in order to detect possible radiation-induced structural alterations. Thin-layer isoelectric focusing revealed at least fifteen multiple forms with pectin-depolymerizing activity, with isoelectric points in the range pH 4.5 to 7. Heterogeneity of pectinesterase was also demonstrated, the main band occurring around pH 4. By thin-layer gel filtration the molecular weight of the pectin-depolymerase was estimated as being about 36,000, and that of pectinesterase as about 33,000.more » Radiation-induced changes of the charge properties or molecular size of the irradiated pectinase preparation were not observed. The feasibility of using ionizing radiation for the reduction of microbial contamination of industrial enzyme preparations looks promising.« less

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Oxide-based materials by atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

2017-02-01

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

Method for the manufacture of phase shifting masks for EUV lithography

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

2006-04-04

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Thin film buried anode battery

DOEpatents

Lee, Se-Hee [Lakewood, CO; Tracy, C Edwin [Golden, CO; Liu, Ping [Denver, CO

2009-12-15

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

PubMed Central

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-01-01

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. PMID:28772586

Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

NASA Astrophysics Data System (ADS)

Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

2015-01-01

CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

Contact interaction of thin-walled elements with an elastic layer and an infinite circular cylinder under torsion

NASA Astrophysics Data System (ADS)

Kanetsyan, E. G.; Mkrtchyan, M. S.; Mkhitaryan, S. M.

2018-04-01

We consider a class of contact torsion problems on interaction of thin-walled elements shaped as an elastic thin washer – a flat circular plate of small height – with an elastic layer, in particular, with a half-space, and on interaction of thin cylindrical shells with a solid elastic cylinder, infinite in both directions. The governing equations of the physical models of elastic thin washers and thin circular cylindrical shells under torsion are derived from the exact equations of mathematical theory of elasticity using the Hankel and Fourier transforms. Within the framework of the accepted physical models, the solution of the contact problem between an elastic washer and an elastic layer is reduced to solving the Fredholm integral equation of the first kind with a kernel representable as a sum of the Weber–Sonin integral and some integral regular kernel, while solving the contact problem between a cylindrical shell and solid cylinder is reduced to a singular integral equation (SIE). An effective method for solving the governing integral equations of these problems are specified.

Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, S.; Narayanan, M.; Ma, B.

2011-02-01

Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. Themore » total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.« less

Epitaxial growth and dielectric properties of Pb0.4Sr0.6TiO3 thin films on (00l)-oriented metallic Li0.3Ni0.7O2 coated MgO substrates

NASA Astrophysics Data System (ADS)

Li, X. T.; Du, P. Y.; Mak, C. L.; Wong, K. H.

2007-06-01

Highly (00l)-oriented Li0.3Ni0.7O2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb0.4Sr0.6TiO3 (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li0.3Ni0.7O2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li0.3Ni0.7O2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li0.3Ni0.7O2 buffer layer therefore reaches 70%, which is 75% higher than that without Li0.3Ni0.7O2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.

Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure

NASA Astrophysics Data System (ADS)

Shinohara, Koki; Suzuki, Takahiro; Takamura, Yota; Nakagawa, Shigeki

2018-05-01

In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin layers in an MTJ multilayer composed of a layered CFS/MgO/CFS structure. Oxygen exposure at 2.0 Pa for 10 min after deposition of the bottom CFS layer was effective for obtaining PMA in the CFS layer. One of the reasons for the PMA is the formation of nearly ideal CFS/MgO interfaces due to oxygen exposure before the deposition of the MgO layer. The annealing process was effective for obtaining PMA in the top CFS layer capped with a Pd layer. PMA was clearly observed in the top CFS layer of a Cr(40 nm)/Pd(50 nm)/bottom CFS(0.6 nm)/MgO(2.0 nm)/top CFS(0.6 nm)/ Pd(10 nm) multilayer, where the top CFS and Pd thin films were deposited at RT and subsequently annealed at 300°C. In addition to the continuous layer growth of the films, the crystalline orientation alignment at the top CFS/Pd interface probably attributes to the origin of PMA at the top CFS layer.

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

2016-03-01

In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of -0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ṡ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation.

PubMed

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-03-30

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

PubMed Central

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-01-01

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors. PMID:27026070

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

PubMed

Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

2009-05-15

For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

GUARD RING SEMICONDUCTOR JUNCTION

DOEpatents

Goulding, F.S.; Hansen, W.L.

1963-12-01

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Highway pavement performance test for colored thin anti-skidding layers

NASA Astrophysics Data System (ADS)

Gao, Wei; Cui, Wei; Xu, Ming

2018-03-01

Based on the actual service condition of highway pavement colored thin anti-skidding layers, with materials of color quartz sand and two-component acrylic resin as basis, we designed such tests as the bond strength, shearing strength, tear strength, fatigue performance and aggregate polished value, and included the freeze-thaw cycle and de-icing salt and other factors in the experiment, connecting with the climate characteristics of circumpolar latitude and low altitude in Heilongjiang province. Through the pavement performance test, it is confirmed that the colored thin anti-skidding layers can adapt to cold and humid climate conditions, and its physical mechanical properties are good.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Nanosphere lithography applied to magnetic thin films

NASA Astrophysics Data System (ADS)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Integrated Fluorescence

NASA Technical Reports Server (NTRS)

Tuma, Margaret (Inventor); Gruhlke, Russell W. (Inventor)

1998-01-01

A detection method is integrated with a filtering method and an enhancement method to create a fluorescence sensor that can be miniaturized. The fluorescence sensor comprises a thin film geometry including a waveguide layer, a metal film layer and sensor layer. The thin film geometry of the fluorescence sensor allows the detection of fluorescent radiation over a narrow wavelength interval. This enables wavelength discrimination and eliminates the detection of unwanted light from unknown or spurious sources.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

New designs and characterization techniques for thin-film solar cells

NASA Astrophysics Data System (ADS)

Pang, Yutong

This thesis presents a fundamentally new thin-film photovoltaic design and develops several novel characterization techniques that improve the accuracy of thin-film solar cell computational models by improving the accuracy of the input data. We first demonstrate a novel organic photovoltaic (OPV) design, termed a "Slot OPV", in which the active layer is less than 50 nm; We apply the principles of slot waveguides to confine light within the active layer. According to our calculation, the guided-mode absorption for a 10nm thick active layer equal to the absorption of normal incidence on an OPV with a 100nm thick active layer. These results, together with the expected improvement in charge extraction for ultrathin layers, suggest that slot OPVs can be designed with greater power conversion efficiency than today's state-of-art OPV architectures if practical challenges, such as the efficient coupling of light into these modes, can be overcome. The charge collection probability, i.e. the probability that charges generated by absorption of a photon are successfully collected as current, is a critical feature for all kinds of solar cells. While the electron-beam-induced current (EBIC) method has been used in the past to successfully reconstruct the charge collection probability, this approach is destructive and requires time-consuming sample preparation. We demonstrate a new nondestructive optoelectronic method to reconstruct the charge collection probability by analyzing the internal quantum efficiency (IQE) data that are measured on copper indium gallium diselenide (CIGS) thin-film solar cells. We further improve the method with a parameter-independent regularization approach. Then we introduce the Self-Constrained Ill-Posed Inverse Problem (SCIIP) method, which improves the signal-to-noise of the solution by using the regularization method with system constraints and optimization via an evolutionary algorithm. For a thin-film solar cell optical model to be an accurate representation of reality, the measured refractive index profile of the solar cell used as input to the model must also be accurate. We describe a new method for reconstructing the depth-dependent refractive-index profile with high spatial resolution in thin photoactive layers. This novel technique applies to any thin film, including the photoactive layers of a broad range of thin-film photovoltaics. Together, these methods help us improve the measurement accuracy of the depth profile within thin-film photovoltaics for optical and electronic properties such as refractive index and charge collection probability, which is critical to the understanding, modeling, and optimization of these devices.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Leaping shampoo glides on a 500-nm-thick lubricating air layer

NASA Astrophysics Data System (ADS)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Thin film encapsulation for flexible AM-OLED: a review

NASA Astrophysics Data System (ADS)

Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

2011-03-01

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

Sedimentology, Petrography and Microfacies of the Paleogene Carbonate Sequence - Yaxcopoil-1 Borehole (Chicxulub, Yucatan)

NASA Astrophysics Data System (ADS)

Escobar-Sanchez, E.; Fucugauchi, J. U.

2013-05-01

Chicxulub crater is one the three largest known impact craters on Earth, formed 66 Ma-old, with multi-ring basin morphology. Crater is located in northwestern Yucatan, southern Gulf of Mexico, with rim diameter of 200 km and crater center at Chicxulub Perto in the coastline. It is buried beneath the carbonate and evaporitic Cenozoic sequence. Study of the structure requires geophysics and drilling, with several boreholes drilled in the peninsula. The Yaxcopoil-1 borehole was drilled south of Merida, about 62 km from center, as part of the Chicxulub Scientific Drilling Program. One of the main objectives was to determine the role of the Chicxulub impact event in the K/Pg mass extinction and boundary events. We present a sedimentological and petrological study of the carbonate sequence in the interval from 404 m to 792 m overlying the K/Pg boundary. The well reached a depth of 1510.6 m. In this interval, we identified twelve units marked by different lithological and sedimentological changes, and supplemented by thin section analysis. Facies are composed mainly of marls, argillaceous, limestones, dolomitized limestones, calcareous breccias and calcarenites with shales thin beds. From the microfacies study we observed several major changes in the microfacies. From bottom of the sequence several textural changes cyclic from mudstone to bioclastic planktic foraminiferal wackestone, bioclastic packstone and some bioclastic grainstone. Two textures dominated in the calcareous sequence: bioclastic wackestone and packstone microfacies. From the microfacies study, we derived inferences on stable environmental conditions. We observed benthic and planktic foraminiferal layers. The benthic foraminifera strongly depend on environmental parameters, such as nutrient supply or oxygenation of the sea bottom water in the Paleocene and Eocene. Changes suggest occurrence of a progradational event, with a relative increase in sea level very slowly, with the sediment enough to overcome the elevation. In the last meters of Unit 2 (778-772 m), a series of thin layers of marl and calcareous shale interbedded with wackestone are interpreted as a transgressive event. In the first few meters of Unit 3 provides greater energy currents causing variations in the grain size. Petrographic observations show that planktonic and benthic facies are arranged as intermittent flows in parts of the unit, which points to flow currents. Predominance of coarse-grained facies rich in carbonates possibly indicates a prograding event into deep areas. In the sequence several possible changes in sea level are recorded, especially from Unit 5 to 8 Unit, where a possible limit between the Paleocene and Eocene is located between Unit 6 and Unit 7, at about 660 m. Biostratigraphy was obtained by zones corresponding to P4 and P5. In Unit 8 contains the first record of turbidite or storm deposits outer shelf environments that could be related to platform progradation. The Paleocene-Eocene thermal maximum represents a period of global warming and sea level rise. The sedimentological and micropaleontological changes may be correlated with the faunal turnover in the Gulf of Mexico, providing a complementary tool for biostratigraphic inferences.

Acquisition of thin coronal sectional dataset of cadaveric liver.

PubMed

Lou, Li; Liu, Shu Wei; Zhao, Zhen Mei; Tang, Yu Chun; Lin, Xiang Tao

2014-04-01

To obtain the thin coronal sectional anatomic dataset of the liver by using digital freezing milling technique. The upper abdomen of one Chinese adult cadaver was selected as the specimen. After CT and MRI examinations verification of absent liver lesions, the specimen was embedded with gelatin in stand erect position and frozen under profound hypothermia, and the specimen was then serially sectioned from anterior to posterior layer by layer with digital milling machine in the freezing chamber. The sequential images were captured by means of a digital camera and the dataset was imported to imaging workstation. The thin serial section of the liver added up to 699 layers with each layer being 0.2 mm in thickness. The shape, location, structure, intrahepatic vessels and adjacent structures of the liver was displayed clearly on each layer of the coronal sectional slice. CT and MR images through the body were obtained at 1.0 and 3.0 mm intervals, respectively. The methodology reported here is an adaptation of the milling methods previously described, which is a new data acquisition method for sectional anatomy. The thin coronal sectional anatomic dataset of the liver obtained by this technique is of high precision and good quality.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

Free and bound excitons in thin wurtzite GaN layers on sapphire

NASA Astrophysics Data System (ADS)

Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.

1996-05-01

Free and bound excitons have been studied by photoluminescence in thin (0268-1242/11/5/010/img8) wurtzite-undoped GaN, n-type GaN:Si as well as p-type GaN:Mg and GaN:Zn layers grown by metal-organic chemical vapour phase deposition (MOCVD). An accurate value for the free A exciton binding energy and an estimate for the isotropically averaged hole mass of the uppermost 0268-1242/11/5/010/img9 valence band are deduced from the data on undoped samples. The acceptor-doped samples reveal recombination lines which are attributed to excitons bound to 0268-1242/11/5/010/img10 and 0268-1242/11/5/010/img11 respectively. These lines are spectrally clearly separated and the exciton localization energies are in line with Haynes' rule. Whenever a comparison is possible, it is found that the exciton lines in these thin MOCVD layers are ultraviolet-shifted by 20 to 25 meV as compared to quasi-bulk (0268-1242/11/5/010/img12) samples. This effect is interpreted in terms of the compressive hydrostatic stress component which thin GaN layers experience when grown on sapphire with an AlN buffer layer.

A Cuprous Oxide Thin Film Non-Enzymatic Glucose Sensor Using Differential Pulse Voltammetry and Other Voltammetry Methods and a Comparison to Different Thin Film Electrodes on the Detection of Glucose in an Alkaline Solution

PubMed Central

Molazemhosseini, Alireza; Liu, Chung Chiun

2018-01-01

A cuprous oxide (Cu2O) thin layer served as the base for a non-enzymatic glucose sensor in an alkaline medium, 0.1 NaOH solution, with a linear range of 50–200 mg/dL using differential pulse voltammetry (DPV) measurement. An X-ray photoelectron spectroscopy (XPS) study confirmed the formation of the cuprous oxide layer on the thin gold film sensor prototype. Quantitative detection of glucose in both phosphate-buffered saline (PBS) and undiluted human serum was carried out. Neither ascorbic acid nor uric acid, even at a relatively high concentration level (100 mg/dL in serum), interfered with the glucose detection, demonstrating the excellent selectivity of this non-enzymatic cuprous oxide thin layer-based glucose sensor. Chronoamperometry and single potential amperometric voltammetry were used to verify the measurements obtained by DPV, and the positive results validated that the detection of glucose in a 0.1 M NaOH alkaline medium by DPV measurement was effective. Nickel, platinum, and copper are commonly used metals for non-enzymatic glucose detection. The performance of these metal-based sensors for glucose detection using DPV were also evaluated. The cuprous oxide (Cu2O) thin layer-based sensor showed the best sensitivity for glucose detection among the sensors evaluated. PMID:29316652

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Thin Layer Chromatography (TLC) of Chlorophyll Pigments.

ERIC Educational Resources Information Center

Foote, Jerry

1984-01-01

Background information, list of materials needed, procedures used, and discussion of typical results are provided for an experiment on the thin layer chromatography of chlorophyll pigments. The experiment works well in high school, since the chemicals used are the same as those used in paper chromatography of plant pigments. (JN)

What Factors Affect the Separation of Substances Using Thin-Layer Chromatography? An Undergraduate Experiment.

ERIC Educational Resources Information Center

Nash, John J.; Meyer, Jeanne A.; Everson, Barbara

2001-01-01

Rx values in thin-layer chromatography (TLC) depend strongly on the solvent saturation of the atmosphere above the liquid in the TLC developing chamber. Presents an experiment illustrating the potentially dramatic effects on TLC Rx values of not equilibrating the solvent atmosphere during development. (ASK)

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2011 CFR

2011-04-01

... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert material (e.g., cellulose, alumina, etc.) and eluted off by a moving solvent (moving phase) until equilibrium occurs between the two phases. (b) Classification. Class I (general controls). The device is...

Quantitative determination of seven chemical constituents and chemo-type differentiation of chamomiles using high-performance thin-layer chromatography

USDA-ARS?s Scientific Manuscript database

Matricaria recutita L. (German Chamomile), Anthemis nobilis L. (Roman Chamomile) and Chrysanthemum morifolium Ramat are commonly used chamomiles. High performance thin layer chromatographic (HPTLC) method was developed for estimation of six flavonoids (rutin, luteolin-7-O-ß-glucoside, chamaemeloside...

A Thin Layer Chromatography Laboratory Experiment of Medical Importance

ERIC Educational Resources Information Center

Sharma, Loretta; Desai, Ankur; Sharma, Ajit

2006-01-01

A thin layer chromatography experiment of medical importance is described. The experiment involves extraction of lipids from simulated amniotic fluid samples followed by separation, detection, and scanning of the lecithin and sphingomyelin bands on TLC plates. The lecithin-to-sphingomyelin ratio is calculated. The clinical significance of this…

Showing Its Colors. Thin-Layer Chromatographic Detection of Cannabinoid Metabolites.

ERIC Educational Resources Information Center

Bonicamp, Judith M.

1986-01-01

Describes a chemistry laboratory experiment in which thin-layer chromatography (TLC) is used to analyze urine specimens containing metabolites of the drug tetrahydro-cannabinol, which comes from the marijuana plant. The materials needed to conduct the experiment are listed, and the procedure and expected results are outlined. (TW)

Analysis and Identification of Acid-Base Indicator Dyes by Thin-Layer Chromatography

ERIC Educational Resources Information Center

Clark, Daniel D.

2007-01-01

Thin-layer chromatography (TLC) is a very simple and effective technique that is used by chemists by different purposes, including the monitoring of the progress of a reaction. TLC can also be easily used for the analysis and identification of various acid-base indicator dyes.

In situ identification of high-performance thin-layer chromatography spots by fourier transform surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Koglin, Eckhardt; Kramer, Hella; Sawatski, Juergen; Lehner, Carolin; Hellman, Janice L.

1994-01-01

FT-SERS has been used to identify samples supported on high-performance thin-layer chromatography plates. The TLC plates were sprayed with colloidal silver solutions which resulted in enhancement of the FT-Raman scattering of these biologically and environmentally important compounds.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

Normal and Reversed-Phase Thin Layer Chromatography of Green Leaf Extracts

ERIC Educational Resources Information Center

Sjursnes, Birte Johanne; Kvittingen, Lise; Schmid, Rudolf

2015-01-01

Introductory experiments of chromatography are often conducted by separating colored samples, such as inks, dyes, and plant extracts, using filter paper, chalk, or thin layer chromatography (TLC) plates with various solvent systems. Many simple experiments have been reported. The relationship between normal chromatography and reversed-phase…

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Coal deposits of the Hedstrom Lake area, McCone, Garfield, Prairie, Custer, and Rosebud counties, Montana

USGS Publications Warehouse

Wincentsen, Herbert

1979-01-01

The Hedstrom Lake area is located on the southwestern flank of the Williston basin, which is a major structural feature in eastern Montana and western North Dakota. Locally, the rocks have a structural high in T. 12 N., R. 47 E., a structural low in T. 18 N., R. 46 E., and a maximum structural relief of more than 700 ft. The exposed rocks in most of the area are part of the Tongue River Member of the Paleocene Fort Union Formation. The Tongue River Member consists of interbedded siltstone, sandstone, shale, and coal. In ascending order, the five main or principal coal beds are the S, Haughins, R, Q, and Rogers. The S bed ranges in thickness from 0 to 11 ft. The Haughins bed is usually a single bed 2-10 ft thick; in the southern part of the area, it splits into two benches which have a total thickness of 12 ft. The R bed is thin in most of the area, but in the northern part it attains a thickness of 9 ft.. The Q bed occurs at about the same horizon as the Rogers bed, but the drilling control and surface mapping are insufficient for correlation. The Rogers bed has a maximum thickness of 17.1 ft in sec. 15, T. 13N., R. 47 E., but thins rapidly to the northwest.

Early cretaceous rift sediments of the Gabon-Congo margin: lithology and organic matter; tectonic and paleogeothermal evolution

NASA Astrophysics Data System (ADS)

Robert, P.; Yapaudjian, L.

The active troughs of the western Gabon-Congo margin which are part of the South Atlantic rift contain a Neocomian to barremian-aged fluvial-lacustrine series. The lithological sequence of interbedded clastic and pelitic formations constitutes a well-defined cycle. This cycle is divided into: a fluvial or piedmont stage, a lacustrine turbidite-stage corresponding to the distension paroxysm of the basin, and finally, a lacustrine deltaic stage of infilling and tectonic quiescence. The organic matter included in the shale layers is abundant and originates mainly from lacustrine Botryococcus algae and their alteration and secretion products. The geothermal history of the basin, demonstrated by the evolution of the organic matter indicates a strong hyperthermy located in the active, more subsiding part of the basin, and contemporaneous with sedimentation.

X-ray lithography masking

NASA Technical Reports Server (NTRS)

Smith, Henry I. (Inventor); Lim, Michael (Inventor); Carter, James (Inventor); Schattenburg, Mark (Inventor)

1998-01-01

X-ray masking apparatus includes a frame having a supporting rim surrounding an x-ray transparent region, a thin membrane of hard inorganic x-ray transparent material attached at its periphery to the supporting rim covering the x-ray transparent region and a layer of x-ray opaque material on the thin membrane inside the x-ray transparent region arranged in a pattern to selectively transmit x-ray energy entering the x-ray transparent region through the membrane to a predetermined image plane separated from the layer by the thin membrane. A method of making the masking apparatus includes depositing back and front layers of hard inorganic x-ray transparent material on front and back surfaces of a substrate, depositing back and front layers of reinforcing material on the back and front layers, respectively, of the hard inorganic x-ray transparent material, removing the material including at least a portion of the substrate and the back layers of an inside region adjacent to the front layer of hard inorganic x-ray transparent material, removing a portion of the front layer of reinforcing material opposite the inside region to expose the surface of the front layer of hard inorganic x-ray transparent material separated from the inside region by the latter front layer, and depositing a layer of x-ray opaque material on the surface of the latter front layer adjacent to the inside region.

Multi-Dimensional Damage Detection for Surfaces and Structures

NASA Technical Reports Server (NTRS)

Williams, Martha; Lewis, Mark; Roberson, Luke; Medelius, Pedro; Gibson, Tracy; Parks, Steen; Snyder, Sarah

2013-01-01

Current designs for inflatable or semi-rigidized structures for habitats and space applications use a multiple-layer construction, alternating thin layers with thicker, stronger layers, which produces a layered composite structure that is much better at resisting damage. Even though such composite structures or layered systems are robust, they can still be susceptible to penetration damage. The ability to detect damage to surfaces of inflatable or semi-rigid habitat structures is of great interest to NASA. Damage caused by impacts of foreign objects such as micrometeorites can rupture the shell of these structures, causing loss of critical hardware and/or the life of the crew. While not all impacts will have a catastrophic result, it will be very important to identify and locate areas of the exterior shell that have been damaged by impacts so that repairs (or other provisions) can be made to reduce the probability of shell wall rupture. This disclosure describes a system that will provide real-time data regarding the health of the inflatable shell or rigidized structures, and information related to the location and depth of impact damage. The innovation described here is a method of determining the size, location, and direction of damage in a multilayered structure. In the multi-dimensional damage detection system, layers of two-dimensional thin film detection layers are used to form a layered composite, with non-detection layers separating the detection layers. The non-detection layers may be either thicker or thinner than the detection layers. The thin-film damage detection layers are thin films of materials with a conductive grid or striped pattern. The conductive pattern may be applied by several methods, including printing, plating, sputtering, photolithography, and etching, and can include as many detection layers that are necessary for the structure construction or to afford the detection detail level required. The damage is detected using a detector or sensory system, which may include a time domain reflectometer, resistivity monitoring hardware, or other resistance-based systems. To begin, a layered composite consisting of thin-film damage detection layers separated by non-damage detection layers is fabricated. The damage detection layers are attached to a detector that provides details regarding the physical health of each detection layer individually. If damage occurs to any of the detection layers, a change in the electrical properties of the detection layers damaged occurs, and a response is generated. Real-time analysis of these responses will provide details regarding the depth, location, and size estimation of the damage. Multiple damages can be detected, and the extent (depth) of the damage can be used to generate prognostic information related to the expected lifetime of the layered composite system. The detection system can be fabricated very easily using off-the-shelf equipment, and the detection algorithms can be written and updated (as needed) to provide the level of detail needed based on the system being monitored. Connecting to the thin film detection layers is very easy as well. The truly unique feature of the system is its flexibility; the system can be designed to gather as much (or as little) information as the end user feels necessary. Individual detection layers can be turned on or off as necessary, and algorithms can be used to optimize performance. The system can be used to generate both diagnostic and prognostic information related to the health of layer composite structures, which will be essential if such systems are utilized for space exploration. The technology is also applicable to other in-situ health monitoring systems for structure integrity.

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

NASA Astrophysics Data System (ADS)

Badalyan, A. M.; Bakhturova, L. F.; Kaichev, V. V.; Polyakov, O. V.; Pchelyakov, O. P.; Smirnov, G. I.

2011-09-01

A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu0) and has the form of closely packed nanograins with a characteristic structure.

Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I.; Seibt, M.

2015-12-15

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

Thin film solar energy collector

DOEpatents

Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

1983-11-22

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications

NASA Astrophysics Data System (ADS)

Huai, Yiming; Gan, Huadong; Wang, Zihui; Xu, Pengfa; Hao, Xiaojie; Yen, Bing K.; Malmhall, Roger; Pakala, Nirav; Wang, Cory; Zhang, Jing; Zhou, Yuchen; Jung, Dongha; Satoh, Kimihiro; Wang, Rongjun; Xue, Lin; Pakala, Mahendra

2018-02-01

High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (˜10 nm) with a tunnel magnetoresistance (TMR) ratio over 200% after high temperature back-end-of-line (BEOL) processing up to 400 °C. A thin reference layer with low magnetic moment and strong perpendicular magnetic anisotropy (PMA) is key to reduce the total thickness of the full pMTJ stack. We demonstrated strong interfacial PMA and a perpendicular Ruderman-Kittel-Kasuya-Yosida exchange interaction in the Co/Ir system. Owing to the additional high PMA at the Ir/Co interface in combination with a conventional CoFeB/MgO interface in the Ir/Co/Mo/CoFeB/MgO reference layer, the full film pMTJ showed a TMR ratio over 210% after annealing at 400 °C for 150 min. The high TMR ratio can be attributed to the thin stack design by combining a thin reference layer with the efficient compensation by a thin pinned layer. The annealing stability may be explained by the absence of solid solution in the Co-Ir system and the low oxygen affinity of Mo in the reference layer and the free layer. High device performance with a TMR ratio over 210% was also confirmed after subjecting the patterned devices to BEOL processing temperatures of up to 400 °C. This proposed pMTJ design is suitable for both standalone and embedded STT-MRAM applications.

Buried anode lithium thin film battery and process for forming the same

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

2004-10-19

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Geologic Controls of Hydraulic Conductivity in the Snake River Plain Aquifer At and Near the Idaho National Engineering and Environmental Laboratory, Idaho

DOE Office of Scientific and Technical Information (OSTI.GOV)

S. R. Anderson; M. A. Kuntz; L. C. Davis

1999-02-01

The effective hydraulic conductivity of basalt and interbedded sediment that compose the Snake River Plain aquifer at and near the Idaho National Engineering and Environmental Laboratory (INEEL) ranges from about 1.0x10 -2 to 3.2x10 4 feet per day (ft/d). This six-order-of-magnitude range of hydraulic conductivity was estimated from single-well aquifer tests in 114 wells, and is attributed mainly to the physical characteristics and distribution of basalt flows and dikes. Hydraulic conductivity is greatest in thin pahoehoe flows and near-vent volcanic deposits. Hydraulic conductivity is least in flows and deposits cut by dikes. Estimates of hydraulic conductivity at and near themore » INEEL are similar to those measured in similar volcanic settings in Hawaii. The largest variety of rock types and the greatest range of hydraulic conductivity are in volcanic rift zones, which are characterized by numerous aligned volcanic vents and fissures related to underlying dikes. Three broad categories of hydraulic conductivity corresponding to six general types of geologic controls can be inferred from the distribution of wells and vent corridors. Hydraulic conductivity of basalt flows probably is increased by localized fissures and coarse mixtures of interbedded sediment, scoria, and basalt rubble. Hydraulic conductivity of basalt flows is decreased locally by abundant alteration minerals of probable hydrothermal origin. Hydraulic conductivity varies as much as six orders of magnitude in a single vent corridor and varies from three to five orders of magnitude within distances of 500 to 1,000 feet. Abrupt changes in hydraulic conductivity over short distances suggest the presence of preferential pathways and local barriers that may greatly affect the movement of ground water and the dispersion of radioactive and chemical wastes downgradient from points of waste disposal.« less

Carbonate apron models: Alternatives to the submarine fan model for paleoenvironmental analysis and hydrocarbon exploration

USGS Publications Warehouse

Mullins, H.T.; Cook, H.E.

1986-01-01

Sediment gravity flow deposition along the deep-water flanks of carbonate platforms typically does not produce submarine fans. Rather, wedge-shaped carbonate aprons develop parallel to the adjacent shelf/slope break. The major difference between submarine fans and carbonate aprons is a point source with channelized sedimentation on fans, versus a line source with sheet-flow sedimentation on aprons. Two types of carbonate aprons may develop. Along relatively gentle (< 4??) platform-margin slopes, aprons form immediately adjacent to the shallow-water platform and are referred to as carbonate slope aprons. Along relatively steep (4-15??) platform margin slopes, redeposited limestones accumulate in a base-of-slope setting, by-passing an upper slope via a multitude of small submarine canyons, and are referred to as carbonate base-of-slope aprons. Both apron types are further subdivided into inner and outer facies belts. Inner apron sediments consist of thick, mud-supported conglomerates and megabreccias (Facies F) as well as thick, coarse-grained turbidites (Facies A) interbedded with subordinate amounts of fine-grained, peri-platform ooze (Facies G). Outer apron sediments consist of thinner, grain-supported conglomerates and turbidites (Facies A) as well as classical turbidites (Facies C) with recognizable Bouma divisions, interbedded with approximately equal proportions of peri-platform ooze (Facies G). Seaward, aprons grade laterally into basinal facies of thin, base-cut-out carbonate turbidites (Facies D) that are subordinate to peri-platform oozes (Facies G). Carbonate base-of-slope aprons grade shelfward into an upper slope facies of fine-grained peri-platform ooze (Facies G) cut by numerous small canyons that are filled with coarse debris, as well as intraformational truncation surfaces which result from submarine sliding. In contrast, slope aprons grade shelfward immediately into shoal-water, platform-margin facies without an intervening by-pass slope. The two carbonate apron models presented here offer alternatives to the submarine-fan model for paleoenvironmental analysis and hydrocarbon exploration for mass-transported carbonate facies. ?? 1986.

Fluvial to Lacustrine Facies Transitions in Gale Crater, Mars

NASA Technical Reports Server (NTRS)

Sumner, Dawn Y.; Williams, Rebecca M. E.; Schieber, Juergen; Palucis, Marisa C.; Oehler, Dorothy Z.; Mangold, Nicolas; Kah, Linda C.; Gupta, Sanjeev; Grotzinger, John P.; Grant, John A., III;

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

Rapid thin-layer chromatographic photodensitometric method for the determination of metoclopramide and clebopride in the presence of some of their metabolic products.

PubMed

Huizing, G; Beckett, A H; Segura, J

1979-04-21

Metoclopramide and its newly developed analogue clebopride, together with some of their metabolic products are quantitated, following extraction from biological tissues and fluids, and subsequent separation on silica gel thin-layer chromatographic plates. Diazotisation, followed by coupling with N-(1-naphthyl)ethylenediammonium dichloride, carried out on the thin-layer plate, is utilised for visualisation. The intensity of the spots is measured by photodensitometric analysis. The effect of variation of various experimental conditions is studied. The method has proven to be satisfactory for the measurement of 20 ng/ml of these compounds in biological material; the results are well within the accepted limits of deviation.

Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanrikulu, Mahmud Yusuf, E-mail: mytanrikulu@adanabtu.edu.tr; Rasouli, Hamid Reza; Ghaffari, Mohammad

2016-05-15

This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

Fabrication and electrochemical properties of insoluble fullerene-diamine adduct thin-films as buffer layer by alternate immersion process

NASA Astrophysics Data System (ADS)

Saito, Jo; Akiyama, Tsuyoshi; Suzuki, Atsushi; Oku, Takeo

2017-01-01

Insoluble fullerene-diamine adduct thin-films consisting of C60 and 1,2-diaminoethane were easily fabricated on an electrode by an alternate immersion process. Formation of the C60-diamine adduct films were confirmed using transmission absorption spectroscopy and atomic force microscopy. An inverted-type organic solar cells were fabricated by using the C60-diamine adduct film as the electron transport layer. The resultant photoelectric conversation performance of the solar cells suggested that photocurrent is generated via the photoexcitation of polythiophene. The result suggests that the present insoluble fullerene-diamine adduct films worked as buffer layer for organic thin-film solar cells.

Thin Layer Drying Model of Bacterial Cellulose Film

NASA Astrophysics Data System (ADS)

Hadi Jatmiko, Tri; Taufika Rosyida, Vita; Wheni Indrianingsih, Anastasia; Apriyana, Wuri

2017-12-01

The bacterial cellulose film produced by Acetobacter xylinum using coconut water as a carbon source was dried at a temperature of 60 to 100 C. The drying process of bacterial cellulose film occur at falling rate drying period. Increasing drying temperature will shorten the drying time. The drying data fitted with thin layer drying models that widely used, Newton, Page and Henderson and Pabis models. All thin layer drying models describe the experimental data well, but Page model is better than the other models on all various temperature with coefficients of determination (R2) range from 0.9908 to 0.9979, chi square range from 0.000212 to 0.000851 and RMSE range from 0.014307 to 0.0289458.

Hydrogen in thin Pd-based layers deposited on reticulated vitreous carbon-A new system for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Łukaszewski, M.; Żurowski, A.; Czerwiński, A.

Reticulated vitreous carbon (RVC) has been used as a matrix for electrodeposition of thin layers of Pd and Pd-rich Pd-Rh alloys. It was found that RVC substrate does not affect qualitatively hydrogen absorption behavior of Pd-based deposits. Similarly to thin Pd or Pd alloy layers deposited on Au wires, the α-β phase transition controls the overall rate of hydrogen absorption and desorption into/from Pd-based/RVC electrodes. The possibility of the application of these materials as phase charging-discharging systems was investigated. The values of specific pseudocapacitance, specific power and specific energy were comparable with those for supercapacitors utilizing various redox reactions.

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Effect of solution concentration on MEH-PPV thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

High efficiency thin-film crystalline Si/Ge tandem solar cell.

PubMed

Sun, G; Chang, F; Soref, R A

2010-02-15

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar cells favor a thin Si layer and a thick Ge layer with a thin tunnel hetero-diode placed in between. We predict efficiency ranging from 19% to 28% for AM1.5G solar irradiance concentrated from 1 approximately 1000 Suns for a cell with a total thickness approximately 100 microm.

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

PubMed

Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

2015-05-13

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A two-layer structured PbI2 thin film for efficient planar perovskite solar cells.

PubMed

Ying, Chao; Shi, Chengwu; Wu, Ni; Zhang, Jincheng; Wang, Mao

2015-07-28

In this paper, a two-layer structured PbI2 thin film was constructed by the spin-coating procedure using a 0.80 M PbI2 solution in DMF and subsequent close-spaced vacuum thermal evaporation using PbI2 powder as a source. The bottom PbI2 thin film was compact with a sheet-like appearance, parallel to the FTO substrate, and can be easily converted to a compact perovskite thin film to suppress the charge recombination of the electrons of the TiO2 conduction band and the holes of the spiro-OMeTAD valence band. The top PbI2 thin film was porous with nano-sheet arrays, perpendicular to the FTO substrate, and can be easily converted to a porous perovskite thin film to improve the hole migration from the perovskite to spiro-OMeTAD and the charge separation at the perovskite/spiro-OMeTAD interface. The planar perovskite solar cells based on the two-layer structured PbI2 thin film exhibited a photoelectric conversion efficiency of 11.64%, along with an open-circuit voltage of 0.90 V, a short-circuit photocurrent density of 19.29 mA cm(-2) and a fill factor of 0.67.

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Kimi, Young Soon; Yang, O-Bong; Shin, Hyung-Shik

2011-04-01

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

Thin film photovoltaic cells having increased durability and operating life and method for making same

DOEpatents

Barnett, Allen M.; Masi, James V.; Hall, Robert B.

1980-12-16

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Functionally graded alumina-based thin film systems

DOEpatents

Moore, John J.; Zhong, Dalong

2006-08-29

The present invention provides coating systems that minimize thermal and residual stresses to create a fatigue- and soldering-resistant coating for aluminum die casting dies. The coating systems include at least three layers. The outer layer is an alumina- or boro-carbide-based outer layer that has superior non-wettability characteristics with molten aluminum coupled with oxidation and wear resistance. A functionally-graded intermediate layer or "interlayer" enhances the erosive wear, toughness, and corrosion resistance of the die. A thin adhesion layer of reactive metal is used between the die substrate and the interlayer to increase adhesion of the coating system to the die surface.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Equatorial magnetic Rossby waves — evidence for a thin, strongly-buoyant stratified layer in earth's core

NASA Astrophysics Data System (ADS)

Knezek, Nicholas; Buffett, Bruce

2017-04-01

A low density stratified layer at the top of Earth's core has been proposed by many authors on the basis of chemical and thermodynamic arguments and has implications for Earth's thermal history, core energetics, and core-mantle interactions. Past studies claiming to detect a layer using perturbations in seismic wave speeds are contentious due to the extremely small magnitude of the detected signal. Recently, several studies have instead argued for the existence of a stratified layer by hypothesizing that oscillations in the observed geomagnetic field arise from waves propagating in the layer. In particular, 60 year oscillations in dipole strength have been attributed to global MAC waves, and 8 year oscillations of secular acceleration have been attributed to equatorially-trapped waves. We use a new hybrid finite-volume and Fourier numerical method we developed to model magnetohydrodynamic waves in a thin layer and show that a thin, strongly buoyant layer can produce equatorially-trapped waves with similar structures and periods to the observed 8 year signal. Using these simulated wave structures, we provide additional evidence for the existence of several propagating wave modes and place constraints on estimates for the wave periods, stratified layer thickness, and strength of buoyancy within the layer.

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Measurement of thin films using very long acoustic wavelengths

NASA Astrophysics Data System (ADS)

Clement, G. T.; Nomura, H.; Adachi, H.; Kamakura, T.

2013-12-01

A procedure for measuring material thickness by means of necessarily long acoustic wavelengths is examined. The approach utilizes a temporal phase lag caused by the impulse time of wave momentum transferred through a thin layer that is much denser than its surrounding medium. In air, it is predicted that solid or liquid layers below approximately 1/2000 of the acoustic wavelength will exhibit a phase shift with an arctangent functional dependence on thickness and layer density. The effect is verified for thin films on the scale of 10 μm using audible frequency sound (7 kHz). Soap films as thin as 100 nm are then measured using 40 kHz air ultrasound. The method's potential for imaging applications is demonstrated by combining the approach with near-field holography, resulting in reconstructions with sub-wavelength resolution in both the depth and lateral directions. Potential implications at very high and very low acoustic frequencies are discussed.

Thin-Layer Chromatography: The "Eyes" of the Organic Chemist

ERIC Educational Resources Information Center

Dickson, Hamilton; Kittredge, Kevin W.; Sarquis, Arlyne

2004-01-01

Thin-layer chromatography (TLC) methods are successfully used in many areas of research and development such as clinical medicine, forensic chemistry, biochemistry, and pharmaceutical analysis as TLC is relatively inexpensive and has found widespread application as an easy to use, reliable, and quick analytic tool. The usefulness of TLC in organic…

Optical Coherence Tomography in Glaucoma

NASA Astrophysics Data System (ADS)

Berisha, Fatmire; Hoffmann, Esther M.; Pfeiffer, Norbert

Retinal nerve fiber layer (RNFL) thinning and optic nerve head cupping are key diagnostic features of glaucomatous optic neuropathy. The higher resolution of the recently introduced SD-OCT offers enhanced visualization and improved segmentation of the retinal layers, providing a higher accuracy in identification of subtle changes of the optic disc and RNFL thinning associated with glaucoma.

A mass transfer model of ethanol emission from thin layers of corn silage

USDA-ARS?s Scientific Manuscript database

A mass transfer model of ethanol emission from thin layers of corn silage was developed and validated. The model was developed based on data from wind tunnel experiments conducted at different temperatures and air velocities. Multiple regression analysis was used to derive an equation that related t...

QUALITY ASSURANCE STUDY OF MARINE LIPID CLASS DETERMINATION USING CHROMAROD/IATROSCAN( REG. TRADEMARK) THIN-LAYER CHROMATOGRAPHY-FLAME IONIZATION DETECTOR

EPA Science Inventory

An Iatroscan thin-layer chromatorgraphy-flame ionization detector has been utilized to quantify lipid classes in marine samples. This method was evaluated relative to established quality assurance (QA) procedures used for the gas chromatographic analysis of PCBs. A method for ext...

Phospholipids, Dietary Supplements, and Chicken Eggs: An Inquiry-Based Exercise Using Thin-Layer Chromatography

ERIC Educational Resources Information Center

Potteiger, Sara E.; Belanger, Julie M.

2015-01-01

This inquiry-based experiment is designed for organic or biochemistry undergraduate students to deduce the identity of phospholipids extracted from chicken eggs and dietary supplements. This is achieved using thin-layer chromatography (TLC) data, a series of guided questions of increasing complexity, and provided relative retention factor (Rf)…

Synthesis of selenium nano-composite (t-Se@PS) by surface initiated atom transfer radical polymerization.

PubMed

Wang, Michael C P; Gates, Byron D

2012-09-04

Selenium nanostructures, which are otherwise susceptible to oxidative damage, were encapsulated with a thin layer of polystyrene. The thin layer of polystyrene was grafted onto the surfaces of selenium by a surface initiated atom transfer radical polymerization reaction. These encapsulated nanostructures demonstrate an enhanced resistance towards corrosion.

Evaluating Mechanisms of Dihydroxylation by Thin-Layer Chromatography: A Microscale Experiment for Organic Chemistry

ERIC Educational Resources Information Center

Burlingham, Benjamin T.; Rettig, Joseph C.

2008-01-01

A microscale experiment is presented in which cyclohexene is dihydroxylated under three sets of conditions: epoxidation-hydrolysis, permanganate oxidation, and the Woodward dihydroxylation. The products of the reactions are determined by the use of thin-layer chromatography. Teams of students are presented with proposed mechanisms for each…

A Simple and Inexpensive Capillary Holder for Thin-Layer Chromatography

ERIC Educational Resources Information Center

Pintea, Beniamin-Nicolae V.

2011-01-01

Thin-layer chromatography (TLC) is a widely used method of qualitative analysis in organic synthesis, as it uniquely combines low cost, rapidity, simplicity, versatility, small quantities of sample and low detection limits. The simplest and most economical method for the application of samples onto TLC plates is by hand, using glass capillaries.…

Moisture removal characteristics of thin layer rough rice under sequenced infrared radiation heating and cooling

USDA-ARS?s Scientific Manuscript database

Rice drying with infrared (IR) radiation has been investigated during recent years and showed promising potential with improved quality and energy efficiency. The objective of this study was to further investigate the moisture removal characteristics of thin layer rough rice heated by IR and cooled ...

Thin-layer chromatographic (TLC) separations and bioassays of plant extracts to identify antimicrobial compounds

USDA-ARS?s Scientific Manuscript database

A common screen for plant antimicrobial compounds consists of separating plant extracts by paper or thin-layer chromatography (PC or TLC), exposing the chromatograms to microbial suspensions (e.g. fungal spores in nutrient solution or bacteria in liquefied agar), allowing time for the microbes to gr...

Coating of porous carbon for use in lithium air batteries

DOEpatents

Amine, Khalil; Lu, Jun; Du, Peng; Lei, Yu; Elam, Jeffrey W

2015-04-14

A cathode includes a carbon material having a surface, the surface having a first thin layer of an inert material and a first catalyst overlaying the first thin layer, the first catalyst including metal or metal oxide nanoparticles, wherein the cathode is configured for use as the cathode of a lithium-air battery.

Role of HfO 2/SiO 2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

DOE PAGES

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

2016-07-15

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Electrical Nanocontact Between Bismuth Nanowire Edges and Electrodes

NASA Astrophysics Data System (ADS)

Murata, Masayuki; Nakamura, Daiki; Hasegawa, Yasuhiro; Komine, Takashi; Uematsu, Daisuke; Nakamura, Shinichiro; Taguchi, Takashi

2010-09-01

Three methods for attaching electrodes to a bismuth nanowire sample were investigated. In the first and second methods, thin layers of titanium and copper were deposited by ion plating under vacuum onto the edge surface of individual bismuth nanowire samples that were encapsulated in a quartz template. Good electrical contact between the electrodes and the nanowire was achieved using silver epoxy and conventional solder on the thin-film layers in the first and second methods, respectively. In the third method, a low-melting-point solder was utilized and was also successful in achieving good electrical contact in air atmosphere. The connection methods showed no difference in terms of resistivity temperature dependence or Seebeck coefficient. The third method has an advantage in that nanocontact is easily achieved; however, diffusion of the solder into the nanowire allows contamination near the melting point of the solder. In the first and second methods, the thin-film layer enabled electrical contact to be more safely achieved than the direct contact used in the third method, because the thin-film layer prevented diffusion of binder components.

Magneto-optical properties of CoFeB ultrathin films: Effect of Ta buffer and capping layer

NASA Astrophysics Data System (ADS)

Husain, Sajid; Gupta, Nanhe Kumar; Barwal, Vineet; Chaudhary, Sujeet

2018-05-01

The effect of adding Ta as a capping and buffer layer on ultrathin CFB(Co60Fe20B20) thin films has been investigated by magneto-optical Kerr effect. A large difference in the coercivity and saturation field is observed between the single layer CFB(2nm) and Ta(5nm)/CFB(2nm)/Ta(2nm) trilayer structure. In particular, the in-plane anisotropy energy is found to be 90kJ/m3 on CFB(2nm) and 2.22kJ/m3 for Ta(5nm)/CFB(2nm)/Ta(2nm) thin films. Anisotropy energy further reduced to 0.93kJ/m3 on increasing the CFB thinness in trilayer structure i.e., Ta(5nm)/CFB(4nm)/Ta(2nm). Using VSM measurement, the saturation magnetization is found to be 1230±50 kA/m. Low coercivity and anisotropy energy in capped and buffer layer thin films envisage the potential of employing CFB for low field switching applications of the spintronic devices.

The effect of non-Newtonian viscosity on the stability of the Blasius boundary layer

NASA Astrophysics Data System (ADS)

Griffiths, P. T.; Gallagher, M. T.; Stephen, S. O.

2016-07-01

We consider, for the first time, the stability of the non-Newtonian boundary layer flow over a flat plate. Shear-thinning and shear-thickening flows are modelled using a Carreau constitutive viscosity relationship. The boundary layer equations are solved in a self-similar fashion. A linear asymptotic stability analysis, that concerns the lower-branch structure of the neutral curve, is presented in the limit of large Reynolds number. It is shown that the lower-branch mode is destabilised and stabilised for shear-thinning and shear-thickening fluids, respectively. Favourable agreement is obtained between these asymptotic predictions and numerical results obtained from an equivalent Orr-Sommerfeld type analysis. Our results indicate that an increase in shear-thinning has the effect of significantly reducing the value of the critical Reynolds number, this suggests that the onset of instability will be significantly advanced in this case. This postulation, that shear-thinning destabilises the boundary layer flow, is further supported by our calculations regarding the development of the streamwise eigenfunctions and the relative magnitude of the temporal growth rates.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norwood, D P

1989-01-31

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

PubMed

Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

2014-02-01

This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs.

Advanced Archival Memory

DTIC Science & Technology

1977-07-01

layer as thin as possible. The dead layer phenomena has been observed by other researchers working in the area of solar cells and nuclear particle...solution for the planar diode substrate. Solar cell researchers have had some success in producing -40- •^,.^,„>.^,u.^ ....... .• .„..^....L...A^.^.^:.*.,». ’ ’ "•"’•’•" i.i»miii«i • i immmßm^m i P-PJP adequately thin dead layers for solar cell applications by

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

NASA Astrophysics Data System (ADS)

Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

2017-11-01

In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Spectral Mapping of Interior Layered Deposits of Western Candor Chasma by CRISM

NASA Astrophysics Data System (ADS)

Murchie, S.; Roach, L.; Milliken, R.; Seelos, F.; Wiseman, S.; Humm, D.; Mustard, J.; Bibring, J.; CRISM Team

2007-12-01

Western Candor Chasma contains a 3 km-thick sequence of interior layered deposits (ILDs) that may have been emplaced by sedimentary deposition subsequent to formation of Valles Marineris. Proposed genetic mechanisms include subaerial fluvial deposition or volcanism, accumulation of airfall dust, lacustrine evaporite precipitation, hydrovolcanism, or alternatively deep erosion of the chasma wall materials. Observations by the Mars Express/OMEGA spectrometer showed that the ILDs contain both monohydrated and polyhydrated sulfates in close spatial association with fine-grained ferric oxides having distinctive visible-infrared absorptions (Gendrin et al. 2005a,b). In general, OMEGA data also suggest that monohydrated sulfates are associated with steeper slopes and higher albedos than are polyhydrated sulfates (Mangold 2006). CRISM has observed the ILDs in western Candor using both its 200 m/pixel global mapping mode and targeted observations at 20 or 40 m/pixel. CRISM data show spatial heterogeneity in spectral properties to the spatial resolution limit of the instrument. Both monohydrated sulfates (indicated by 2130- and 2400-nm absorptions) and polyhydrated sulfates (indicated by 1450-, 1940-, and 2420-nm absorptions) are evident at all elevations in the ILDs. Polyhydrate signatures occur on intermediate-albedo, relatively intact exposures of stratified material and are rare, but not absent, in nearby erosional debris. Typically the polyhydrate outcrops are low-sloped and form erosion-resistant cap rocks. The monohydrated sulfate also occurs in intermediate- to high-albedo outcrops, but is more commonly distributed as dark, erosional debris on ledges and in depressions that has been modified by wind to form dunes. Only in rare cases can the dark debris be associated with a discrete, dark source layer. The erosional debris exhibits enhancements in sulfate absorptions as well as in 530-, 660-, and 860- to 900-nm absorptions due to ferric iron minerals; different debris deposits have band centers consistent with hematite and with one or more non- hematitic phases. To the spatial resolution limit of CRISM, there is no evidence for comparable sulfate- or ferric- containing materials in the chasma walls, whose spectra are instead dominated by high-Ca pyroxene. Preliminary interpretations of the CRISM data covering western Candor Chasma include: (a) the ILDs have a lithology distinct from the chasma walls; (b) interbedded layers weather to form surfaces with distinct absorptions due to polyhydrated and monohydrated sulfates; (c) the difference in sulfate absorptions may be attributable to deposition of different phases in response to environmental changes or to preferential dehydration / rehydration of sulfate phases in some exposures; and (d) enhancement of ferric iron absorptions in erosional debris is consistent with abrasion generating more optically active, finer-grained particles, possibly from gray hematite- bearing, sulfate-rich layers. An outstanding issue is whether the dark erosional debris is derived locally from thin, poorly resolved layers, is transported tens of kilometers from common sources, or represents a dark component that is sorted from higher-albedo source layers. References: A. Gendrin et al., Science 307, 1587-1591 (2005a); A. Gendrin et al., Lunar and Planetary Science XXXVI, 1378 (2005b); N. Mangold et al., in Martian Sulfates as Recorders of Atmospheric-Fluid-Rock Interactions, 7039 (2006).

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

PubMed

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 < δ < 0.5) by carefully monitoring the resistance changes under a switching flow of oxidizing gas (O2) and reducing gas (H2) in the temperature range of 250 ~ 800 °C. A giant resistance change ΔR by three to four orders of magnitude in less than 0.1 s was found with a fast oscillation behavior in the resistance change rates in the ΔR vs. t plots, suggesting that the oxygen vacancy exchange diffusion with oxygen/hydrogen atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

NASA Astrophysics Data System (ADS)

Odagawa, Hiroyuki; Terada, Koshiro; Tanaka, Yohei; Nishikawa, Hiroaki; Yanagitani, Takahiko; Cho, Yasuo

2017-10-01

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 µm fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 µm for the thickness of the polarity-inverted layer.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

1994-10-25

A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo, E-mail: bsbae@kaist.ac.kr

In order to improve the reliability of TFT, an Al{sub 2}O{sub 3} insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al{sub 2}O{sub 3} layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V {sub o}{sup 2+} toward the interface between the gate insulator and the semiconductor. The inserted Al{sub 2}O{sub 3} triple layer exhibits amore » noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm{sup 2}/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.« less

Polymer-coated compliant receivers for intact laser-induced forward transfer of thin films: experimental results and modelling

NASA Astrophysics Data System (ADS)

Feinaeugle, Matthias; Horak, Peter; Sones, Collin L.; Lippert, Thomas; Eason, Rob W.

2014-09-01

In this study, we investigate both experimentally and numerically laser-induced forward transfer (LIFT) of thin films to determine the role of a thin polymer layer coating the receiver with the aim of modifying the rate of deceleration and reduction of material stress preventing intact material transfer. A numerical model of the impact phase during LIFT shows that such a layer reduces the modelled stress. The evolution of stress within the transferred deposit and the substrate as a function of the thickness of the polymer layer, the transfer velocity and the elastic properties of the polymer are evaluated. The functionality of the polymer layer is verified experimentally by LIFT printing intact 1- m-thick bismuth telluride films and polymeric light-emitting diode pads onto a layer of 12-m-thick polydimethylsiloxane and 50-nm-thick poly(3,4-ethylenedioxythiophene) blended with poly(styrenesulfonate) (PEDOT:PSS), respectively. Furthermore, it is demonstrated experimentally that the introduction of such a compliant layer improves adhesion between the deposit and its substrate.

A three-layer PMMA electrophoresis microchip with Pt microelectrodes insulated by a thin film for contactless conductivity detection.

PubMed

Liu, Junshan; Wang, Junyao; Chen, Zuanguang; Yu, Yong; Yang, Xiujuan; Zhang, Xianbin; Xu, Zheng; Liu, Chong

2011-03-07

A three-layer poly (methyl methacrylate) (PMMA) electrophoresis microchip integrated with Pt microelectrodes for contactless conductivity detection is presented. A 50 μm-thick PMMA film is used as the insulating layer and placed between the channel plate (containing the microchannel) and the electrode plate (containing the microelectrode). The three-layer structure facilitates the achievement of a thin insulating layer, obviates the difficulty of integrating microelectrodes on a thin film, and does not compromise the integration of microchips. To overcome the thermal and chemical incompatibilities of polymers and photolithographic techniques, a modified lift-off process was developed to integrate Pt microelectrodes onto the PMMA substrate. A novel two-step bonding method was created to assemble the complete PMMA microchip. A low limit of detection of 1.25 μg ml(-1) for Na(+) and high separation efficiency of 77,000 and 48,000 plates/m for Na(+) and K(+) were obtained when operating the detector at a low excitation frequency of 60 kHz.

Improving yield and performance in ZnO thin-film transistors made using selective area deposition.

PubMed

Nelson, Shelby F; Ellinger, Carolyn R; Levy, David H

2015-02-04

We describe improvements in both yield and performance for thin-film transistors (TFTs) fabricated by spatial atomic layer deposition (SALD). These improvements are shown to be critical in forming high-quality devices using selective area deposition (SAD) as the patterning method. Selective area deposition occurs when the precursors for the deposition are prevented from reacting with some areas of the substrate surface. Controlling individual layer quality and the interfaces between layers is essential for obtaining good-quality thin-film transistors and capacitors. The integrity of the gate insulator layer is particularly critical, and we describe a method for forming a multilayer dielectric using an oxygen plasma treatment between layers that improves crossover yield. We also describe a method to achieve improved mobility at the important interface between the semiconductor and the gate insulator by, conversely, avoiding oxygen plasma treatment. Integration of the best designs results in wide design flexibility, transistors with mobility above 15 cm(2)/(V s), and good yield of circuits.

Effect of ordered mesoporous carbon contact layer on the sensing performance of sputtered RuO2 thin film pH sensor.

PubMed

Lonsdale, W; Maurya, D K; Wajrak, M; Alameh, K

2017-03-01

The effect of contact layer on the pH sensing performance of a sputtered RuO 2 thin film pH sensor is investigated. The response of pH sensors employing RuO 2 thin film electrodes on screen-printed Pt, carbon and ordered mesoporous carbon (OMC) contact layers are measured over a pH range from 4 to 10. Working electrodes with OMC contact layer are found to have Nernstian pH sensitivity (-58.4mV/pH), low short-term drift rate (5.0mV/h), low hysteresis values (1.13mV) and fast reaction times (30s), after only 1h of conditioning. A pH sensor constructed with OMC carbon contact layer displays improved sensing performance compared to Pt and carbon-based counterparts, making this electrode more attractive for applications requiring highly-accurate pH sensing with reduced conditioning time. Copyright © 2016 Elsevier B.V. All rights reserved.

Effects of supercritical carbon dioxide on immobile bound polymer chains on solid substrates

NASA Astrophysics Data System (ADS)

Sen, Mani; Asada, Mitsunori; Jiang, Naisheng; Endoh, Maya K.; Akgun, Bulent; Satija, Sushil; Koga, Tadanori

2013-03-01

Adsorbed polymer layers formed on flat solid substrates have recently been the subject of extensive studies because it is postulated to control the dynamics of technologically relevant polymer thin films, for example, in lithography. Such adsorbed layers have been reported to hinder the mobility of polymer chains in thin films even at a large length scale. Consequently, this bound layer remains immobile regardless of processing techniques (i.e. thermal annealing, solvent dissolution, etc). Here, we investigate the use of supercritical carbon dioxide (scCO2) as a novel plasticizer for bound polystyrene layers formed on silicon substrates. In-situ swelling and interdiffusion experiments using neutron reflectivity were performed. As a result, we found the anomalous plasticization effects of scCO2 on the bound polymer layers near the critical point where the anomalous adsorption of CO2 molecules in polymer thin films has been reported previously. Acknowledgement: We acknowledge the financial support from NSF Grant No. CMMI-084626.

Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin

3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMAmore » layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.« less

Growth and characterization of CdS buffer layers by CBD and MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrone, A.A.; Huang, C.; Li, S.S.

1999-03-01

Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigationsmore » of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}« less

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

PubMed

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2017-03-01

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/ I off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO{sub 2}) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO{sub 2} layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO{sub 2} layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnOmore » layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.« less

Geologic map of the Wenatchee 1:100,000 Quadrangle, central Washington

USGS Publications Warehouse

Tabor, R.W.; Waitt, R.B.; Frizzell, V.A.; Swanson, D.A.; Byerly, G.R.; Bentley, R.D.

1982-01-01

The rocks and deposits within the Wenatchee quadrangle can be grouped into six generalized units: (1) Precambrian(?) Swakane Biotite Gneiss in the northeastern part of the quadrangle and the probable Jurassic low-grade metamorphic suite, mostly composed of the Easton Schist, in the southwestern part; (2) the Mesozoic Ingalls Tectonic Complex; (3) the Mesozoic Mount Stuart batholith; (4) lower and middle Tertiary nonmarine sedimentary and volcanic rocks; (5) Miocene basalt flows and interbedded epiclastic rocks constituting part of the Columbia River Basalt Group and interbedded silicic volcaniclastic rocks of the Ellensburg Formation; and (6) Pliocene to Holocene alluvium, glacial, flood, and mass-wastage deposits.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Compliant layer chucking surface

DOEpatents

Blaedel, Kenneth L [Dublin, CA; Spence, Paul A [Pleasanton, CA; Thompson, Samuel L [Pleasanton, CA

2004-12-28

A method and apparatus are described wherein a thin layer of complaint material is deposited on the surface of a chuck to mitigate the deformation that an entrapped particle might cause in the part, such as a mask or a wafer, that is clamped to the chuck. The harder particle will embed into the softer layer as the clamping pressure is applied. The material composing the thin layer could be a metal or a polymer for vacuum or electrostatic chucks. It may be deposited in various patterns to affect an interrupted surface, such as that of a "pin" chuck, thereby reducing the probability of entrapping a particle.

Underpotential deposition-mediated layer-by-layer growth of thin films

DOEpatents

Wang, Jia Xu; Adzic, Radoslav R.

2017-06-27

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.

Photovoltaic cell assembly

DOEpatents

Beavis, Leonard C.; Panitz, Janda K. G.; Sharp, Donald J.

1990-01-01

A photovoltaic assembly for converting high intensity solar radiation into lectrical energy in which a solar cell is separated from a heat sink by a thin layer of a composite material which has excellent dielectric properties and good thermal conductivity. This composite material is a thin film of porous Al.sub.2 O.sub.3 in which the pores have been substantially filled with an electrophoretically-deposited layer of a styrene-acrylate resin. This composite provides electrical breakdown strengths greater than that of a layer consisting essentially of Al.sub.2 O.sub.3 and has a higher thermal conductivity than a layer of styrene-acrylate alone.

Black phosphorus-based one-dimensional photonic crystals and microcavities.

PubMed

Kriegel, Ilka; Toffanin, Stefano; Scotognella, Francesco

2016-11-10

The latest achievements in the fabrication of thin layers of black phosphorus (BP), toward the technological breakthrough of a phosphorene atomically thin layer, are paving the way for their use in electronics, optics, and optoelectronics. In this work, we have simulated the optical properties of one-dimensional photonic structures, i.e., photonic crystals and microcavities, in which few-layer BP is one of the components. The insertion of the 5-nm black phosphorous layers leads to a photonic band gap in the photonic crystals and a cavity mode in the microcavity that is interesting for light manipulation and emission enhancement.

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

NASA Astrophysics Data System (ADS)

Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

A Novel Fabrication Approach for Multifunctional Graphene-based Thin Film Nano-composite Membranes with Enhanced Desalination and Antibacterial Characteristics.

PubMed

Hegab, Hanaa M; ElMekawy, Ahmed; Barclay, Thomas G; Michelmore, Andrew; Zou, Linda; Losic, Dusan; Saint, Christopher P; Ginic-Markovic, Milena

2017-08-08

A practical fabrication technique is presented to tackle the trade-off between the water flux and salt rejection of thin film composite (TFC) reverse osmosis (RO) membranes through controlled creation of a thinner active selective polyamide (PA) layer. The new thin film nano-composite (TFNC) RO membranes were synthesized with multifunctional poly tannic acid-functionalized graphene oxide nanosheets (pTA-f-GO) embedded in its PA thin active layer, which is produced through interfacial polymerization. The incorporation of pTA-f-GOL into the fabricated TFNC membranes resulted in a thinner PA layer with lower roughness and higher hydrophilicity compared to pristine membrane. These properties enhanced both the membrane water flux (improved by 40%) and salt rejection (increased by 8%) of the TFNC membrane. Furthermore, the incorporation of biocidal pTA-f-GO nanosheets into the PA active layer contributed to improving the antibacterial properties by 80%, compared to pristine membrane. The fabrication of the pTA-f-GO nanosheets embedded in the PA layer presented in this study is a very practical, scalable and generic process that can potentially be applied in different types of separation membranes resulting in less energy consumption, increased cost-efficiency and improved performance.

High performance novel gadolinium doped ceria/yttria stabilized zirconia/nickel layered and hybrid thin film anodes for application in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Garcia-Garcia, F. J.; Beltrán, A. M.; Yubero, F.; González-Elipe, A. R.; Lambert, R. M.

2017-09-01

Magnetron sputtering under oblique angle deposition was used to produce Ni-containing ultra thin film anodes comprising alternating layers of gadolinium doped ceria (GDC) and yttria stabilized zirconia (YSZ) of either 200 nm or 1000 nm thickness. The evolution of film structure from initial deposition, through calcination and final reduction was examined by XRD, SEM, TEM and TOF-SIMS. After subsequent fuel cell usage, the porous columnar architecture of the two-component layered thin film anodes was maintained and their resistance to delamination from the underlying YSZ electrolyte was superior to that of corresponding single component Ni-YSZ and Ni-GDC thin films. Moreover, the fuel cell performance of the 200 nm layered anodes compared favorably with conventional commercially available thick anodes. The observed dependence of fuel cell performance on individual layer thicknesses prompted study of equivalent but more easily fabricated hybrid anodes consisting of simultaneously deposited Ni-GDC and Ni-YSZ, which procedure resulted in exceptionally intimate mixing and interaction of the components. The hybrids exhibited very unusual and favorable Isbnd V characteristics, along with exceptionally high power densities at high currents. Their discovery is the principal contribution of the present work.

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

PubMed

Duan, Xidong; Wang, Chen; Pan, Anlian; Yu, Ruqin; Duan, Xiangfeng

2015-12-21

The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Spin-coated epoxy resin embedding technique enables facile SEM/FIB thickness determination of porous metal oxide ultra-thin films.

PubMed

Peña, B; Owen, G Rh; Dettelbach, K E; Berlinguette, C P

2018-01-25

A facile nonsubjective method was designed to measure porous nonconductive iron oxide film thickness using a combination of a focused ion beam (FIB) and scanning electron microscopy. Iron oxide films are inherently nonconductive and porous, therefore the objective of this investigation was to optimize a methodology that would increase the conductivity of the film to facilitate high resolution imaging with a scanning electron microscopy and to preserve the porous nature of the film that could potentially be damaged by the energy of the FIB. Sputter coating the sample with a thin layer of iridium before creating the cross section with the FIB decreased sample charging and drifting, but differentiating the iron layer from the iridium coating with backscattered electron imaging was not definitive, making accurate assumptions of the delineation between the two metals difficult. Moreover, the porous nature of the film was lost due to beam damage following the FIB process. A thin layer plastication technique was therefore used to embed the porous film in epoxy resin that would provide support for the film during the FIB process. However, the thickness of the resin created using conventional thin layer plastication processing varied across the sample, making the measuring process only possible in areas where the resin layer was at its thinnest. Such variation required navigating the area for ideal milling areas, which increased the subjectivity of the process. We present a method to create uniform thin resin layers, of controlled thickness, that are ideal for quantifying the thickness of porous nonconductive films with FIB/scanning electron microscopy. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

Ferroelastic switching in a layered-perovskite thin film

PubMed Central

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu-Feng; Van Tendeloo, Gustaaf; Chen, Long-Qing; Nan, Ce-Wen; Ramesh, Ramamoorthy; Zhang, Jinxing

2016-01-01

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications. PMID:26838483

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

NASA Astrophysics Data System (ADS)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Ferroelastic switching in a layered-perovskite thin film

DOE PAGES

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; ...

2016-02-03

Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barriermore » of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

NASA Astrophysics Data System (ADS)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.