Emerging transparent electrodes based on thin films of carbon nanotubes, graphene, and metallic nanostructures.

PubMed

Hecht, David S; Hu, Liangbing; Irvin, Glen

2011-04-05

Transparent electrodes are a necessary component in many modern devices such as touch screens, LCDs, OLEDs, and solar cells, all of which are growing in demand. Traditionally, this role has been well served by doped metal oxides, the most common of which is indium tin oxide, or ITO. Recently, advances in nano-materials research have opened the door for other transparent conductive materials, each with unique properties. These include CNTs, graphene, metal nanowires, and printable metal grids. This review will explore the materials properties of transparent conductors, covering traditional metal oxides and conductive polymers initially, but with a focus on current developments in nano-material coatings. Electronic, optical, and mechanical properties of each material will be discussed, as well as suitability for various applications. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goswami, Pallab; Goldman, Hart; Raghu, S.

Metallic phases have been observed in several disordered two-dimensional (2D) systems, including thin films near superconductor-insulator transitions and quantum Hall systems near plateau transitions. The existence of 2D metallic phases at zero temperature generally requires an interplay of disorder and interaction effects. Consequently, experimental observations of 2D metallic behavior have largely defied explanation. We formulate a general stability criterion for strongly interacting, massless Dirac fermions against disorder, which describe metallic ground states with vanishing density of states. We show that (2+1)-dimensional quantum electrodynamics (QED 3) with a large, even number of fermion flavors remains metallic in the presence of weakmore » scalar potential disorder due to the dynamic screening of disorder by gauge fluctuations. In conclusion, we also show that QED 3 with weak mass disorder exhibits a stable, dirty metallic phase in which both interactions and disorder play important roles.« less

Advanced Catalysts for Fuel Cells

NASA Technical Reports Server (NTRS)

Narayanan, Sekharipuram R.; Whitacre, Jay; Valdez, T. I.

2006-01-01

This viewgraph presentation reviews the development of catalyst for Fuel Cells. The objectives of the project are to reduce the cost of stack components and reduce the amount of precious metal used in fuel cell construction. A rapid combinatorial screening technique based on multi-electrode thin film array has been developed and validated for identifying catalysts for oxygen reduction; focus shifted from methanol oxidation in FY05 to oxygen reduction in FY06. Multi-electrode arrays of thin film catalysts of Pt-Ni and Pt-Ni-Zr have been deposited. Pt-Ni and have been characterized electrochemically and structurally. Pt-Ni-Zr and Pt-Ni films show higher current density and onset potential compared to Pt. Electrocatalytic activity and onset potential are found to be strong function of the lattice constant. Thin film Pt(59)Ni(39)Zr(2) can provide 10 times the current density of thin film Pt. Thin film Pt(59)Ni(39)Zr(2) also shows 65mV higher onset potential than Pt.

Photochemical metal organic deposition of metal oxides

NASA Astrophysics Data System (ADS)

Law, Wai Lung (Simon)

This thesis pertains to the study of the deposition of metal oxide thin films via the process of Photochemical Metal Organic Deposition (PMOD). In this process, an amorphous metal organic precursor thin film is subjected to irradiation under ambient conditions. Fragmentation of the metal precursor results from the photoreaction, leading to the formation of metal oxide thin films in the presence of oxygen. The advantage of PMOD lies in its ability to perform lithography of metal oxide thin film without the application of photoresist. The metal organic precursor can be imaged directly by photolysis through a lithography mask under ambient conditions. Thus the PMOD process provides an attractive alternative to the conventional VLSI fabrication process. Metal carboxylates and metal acetylacetonates complexes were used as the precursors for PMOD process in this thesis. Transition metal carboxylate and metal acetylacetonate complexes have shown previously that when deposited as amorphous thin films, they will undergo fragmentation upon photolysis, leading to the formation of metal oxide thin films under ambient conditions. In this thesis, the formation of main group metal oxides of aluminum, indium and tin, as well as the formation of rare-earth metal oxides of cerium and europium by PMOD from its corresponding metal organic precursor will be presented. The nature of the photoreactions as well as the properties of the thin films deposited by PMOD will be investigated. Doped metal oxide thin films can also be prepared using the PMOD process. By mixing the metal precursors prior to deposition in the desired ratio, precursor films containing more than one metal precursor can be obtained. Mixed metal oxide thin films corresponding to the original metal ratio, in the precursor mixture, can be obtained upon photolysis under ambient conditions. In this thesis, the properties of doped metal oxide thin films of europium doped aluminum oxide as well as tin doped indium oxide thin films will also be presented.

Superfluidity of dipolar excitons in a transition metal dichalcogenide double layer

NASA Astrophysics Data System (ADS)

Berman, Oleg L.; Kezerashvili, Roman Ya.

2017-09-01

We study formation and superfluidity of dipolar excitons in double layer heterostructures formed by two transition metal dichalcogenide (TMDC) atomically thin layers. Considering screening effects for an electron-hole interaction via the harmonic oscillator approximation for the Keldysh potential, the analytical expressions for the exciton energy spectrum and the mean field critical temperature Tc for the superfluidity are obtained. It is shown that binding energies of A excitons are larger than for B excitons. The mean field critical temperature for a two-component dilute exciton system in a TMDC double layer is analyzed and shown that the latter is an increasing function of the factor Q , determined by the effective masses of A and B excitons and their reduced mass. Comparison of the calculations for Tc performed by employing the Coulomb and Keldysh interactions demonstrates the importance of screening effects in TMDC.

Enhanced piezoelectric output of NiO/nanoporous GaN by suppression of internal carrier screening

NASA Astrophysics Data System (ADS)

Waseem, Aadil; Jeong, Dae Kyung; Johar, Muhammad Ali; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2018-06-01

The efficiency of piezoelectric nanogenerators (PNGs) significantly depends on the free carrier concentration of semiconductors. In the presence of a mechanical stress, piezoelectric charges are generated at both ends of the PNG, which are rapidly screened by the free carriers. The screening effect rapidly decreases the piezoelectric output within fractions of a second. In this study, the piezoelectric outputs of bulk- and nanoporous GaN-based heterojunction PNGs are compared. GaN thin films were epitaxially grown on sapphire substrates using metal organic chemical vapor deposition. Nanoporous GaN was fabricated using electrochemical etching, depleted of free carriers owing to the surface Fermi-level pinning. A highly resistive NiO thin film was deposited on bulk- and nanoporous GaN using radio frequency magnetron sputter. The NiO/nanoporous GaN PNG (NPNG) under a periodic compressive stress of 4 MPa exhibited an output voltage and current of 0.32 V and 1.48 μA cm‑2, respectively. The output voltage and current of the NiO/thin film-GaN PNG (TPNG) were three and five times smaller than those of the NPNG, respectively. Therefore, the high-resistivity of NiO and nanoporous GaN depleted by the Fermi-level pinning are advantageous and provide a better piezoelectric performance of the NPNG, compared with that of the TPNG.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Vacuum-free, maskless patterning of Ni electrodes by laser reductive sintering of NiO nanoparticle ink and its application to transparent conductors.

PubMed

Lee, Daeho; Paeng, Dongwoo; Park, Hee K; Grigoropoulos, Costas P

2014-10-28

We introduce a method for direct patterning of Ni electrodes through selective laser direct writing (LDW) of NiO nanoparticle (NP) ink. High-resolution Ni patterns are generated from NiO NP thin films by a vacuum-free, lithography-free, and solution-processable route. In particular, a continuous wave laser is used for the LDW reductive sintering of the metal oxide under ambient conditions with the aid of reducing agents in the ink solvent. Thin (∼ 40 nm) Ni electrodes of glossy metallic surfaces with smooth morphology and excellent edge definition can be fabricated. By applying this method, we demonstrate a high transmittance (>87%), electrically conducting panel for a touch screen panel application. The resistivity of the Ni electrode is less than an order of magnitude higher compared to that of the bulk Ni. Mechanical bending test, tape-pull test, and ultrasonic bath test confirm the robust adhesion of the electrodes on glass and polymer substrates.

New approach for extraordinary transmission through an array of subwavelength apertures using thin ENNZ metamaterial liners.

PubMed

Baladi, Elham; Pollock, Justin G; Iyer, Ashwin K

2015-08-10

Extraordinary transmission (ET) through a periodic array of subwavelength apertures on a perfect metallic screen has been studied extensively in recent years, and has largely been attributed to diffraction effects, for which the periodicity of the apertures, rather than their dimensions, dominates the response. The transmission properties of the apertures at resonance, on the other hand, are not typically considered 'extraordinary' because they may be explained using more conventional aperture-theoretical mechanisms. This work describes a novel approach for achieving ET in which subwavelength apertures are made to resonate by lining them using thin, epsilon-negative and near-zero (ENNZ) metamaterials. The use of ENNZ metamaterials has recently proven successful in miniaturizing circular waveguides by strongly reducing their natural cutoff frequencies, and the theory is adapted here for the design of subwavelength apertures in a metallic screen. We present simulations and proof-of-concept measurements at microwave frequencies that demonstrate ET for apertures measuring one-quarter of a wavelength in diameter and suggest the potential for even more dramatic miniaturization simply by engineering the ENNZ metamaterial dispersion. The results exhibit a fano-like profile whose frequency varies with the properties of the metamaterial liner, but is independent of period. It is suggested that similar behaviour can be obtained at optical frequencies, where ENNZ metamaterials may be realized using appropriately arranged chains of plasmonic nanoparticles.

Method and apparatus for mounting a dichroic mirror in a microwave powered lamp assembly using deformable tabs

DOEpatents

Ury, M.; Sowers, F.; Harper, C.; Love, W.

1998-11-24

A microwave powered electrodeless lamp includes an improved screen unit having mesh and solid sections with an internal reflector secured at the juncture of the two sections to reflect light into a light-transmitting chamber defined in the lamp microwave cavity by the reflector and the mesh section. A discharge envelope of a bulb is disposed in the light-transmitting chamber. Light emitted from the envelope is prevented by the reflector from entering the cavity portion bounded by the solid section of the screen. The reflector is mounted in the cavity by tabs formed in the screen unit and bendable into the cavity to define support planes abutting respective surfaces of the reflector. The mesh section and tabs are preferably formed by etching a thin metal sheet. 7 figs.

Method and apparatus for mounting a dichroic mirror in a microwave powered lamp assembly using deformable tabs

DOEpatents

Ury, Michael; Sowers, Frank; Harper, Curt; Love, Wayne

1998-01-01

A microwave powered electrodeless lamp includes an improved screen unit having mesh and solid sections with an internal reflector secured at the juncture of the two sections to reflect light into a light-transmitting chamber defined in the lamp microwave cavity by the reflector and the mesh section. A discharge envelope of a bulb is disposed in the light-transmitting chamber. Light emitted from the envelope is prevented by the reflector from entering the cavity portion bounded by the solid section of the screen. The reflector is mounted in the cavity by tabs formed in the screen unit and bendable into the cavity to define support planes abutting respective surfaces of the reflector. The mesh section and tabs are preferably formed by etching a thin metal sheet.

Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate

NASA Astrophysics Data System (ADS)

Lan, Wen-An; Wang, Tsan-Chun; Huang, Ling-Hui; Wu, Tai-Bor

2006-07-01

Ferroelectric Ba(Zr0.25Ti0.75)O3 (BZT) thin films were deposited on high-resistivity Si substrate without or with inserting a high-k buffer layer of Ta2O5. The varactor characteristics of the BZT capacitors in metal-oxide-semiconductor structure were studied. At low frequency (1MHz ), the capacitors exhibit a negatively tunable characteristic, i.e., [C(V)-C(0)]/C(0)<0, against dc bias V, but opposite tunable characteristics were found at microwave frequencies (>1GHz). The change of voltage-dependent characteristic is attributed to the effect of low-resistivity interface induced by charged defects formed from interfacial oxidation of Si in screening the microwave from penetrating into the bulk of Si.

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

This study presents the investigation on crystallinity property of PbTiO3 thin films towards metal-insulator-metal capacitor device fabrication. The preparation of the thin films utilizes sol-gel spin coating method with low annealing temperature effect. Hence, structural and electrical characterization is brought to justify the thin films consistency.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Investigation of discrete component chip mounting technology for hybrid microelectronic circuits

NASA Technical Reports Server (NTRS)

Caruso, S. V.; Honeycutt, J. O.

1975-01-01

The use of polymer adhesives for high reliability microcircuit applications is a radical deviation from past practices in electronic packaging. Bonding studies were performed using two gold-filled conductive adhesives, 10/90 tin/lead solder and Indalloy no. 7 solder. Various types of discrete components were mounted on ceramic substrates using both thick-film and thin-film metallization. Electrical and mechanical testing were performed on the samples before and after environmental exposure to MIL-STD-883 screening tests.

Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

DOEpatents

Martinson, Alex B. F.; Elam, Jeffrey W.; Pellin, Michael J.

2015-05-26

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-Omore » bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.« less

Ensemble control of Kondo screening in molecular adsorbates

DOE PAGES

Maughan, Bret; Zahl, Percy; Sutter, Peter; ...

2017-04-06

Switching the magnetic properties of organic semiconductors on a metal surface has thus far largely been limited to molecule-by-molecule tip-induced transformations in scanned probe experiments. Here we demonstrate with molecular resolution that collective control of activated Kondo screening can be achieved in thin-films of the organic semiconductor titanyl phthalocyanine on Cu(110) to obtain tunable concentrations of Kondo impurities. Using low-temperature scanning tunneling microscopy and spectroscopy, we show that a thermally activated molecular distortion dramatically shifts surface–molecule coupling and enables ensemble-level control of Kondo screening in the interfacial spin system. This is accompanied by the formation of a temperature-dependent Abrikosov–Suhl–Kondo resonancemore » in the local density of states of the activated molecules. This enables coverage-dependent control over activation to the Kondo screening state. Finally, our study thus advances the versatility of molecular switching for Kondo physics and opens new avenues for scalable bottom-up tailoring of the electronic structure and magnetic texture of organic semiconductor interfaces at the nanoscale.« less

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Transparent conductors based on microscale/nanoscale materials for high performance devices

NASA Astrophysics Data System (ADS)

Gao, Tongchuan

Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short-circuit current-density was demonstrated by the optimal solar cell compared with 300-nm-thick Si solar cell with antireflection coating and silver back reflector.

Colloquium: Excitons in atomically thin transition metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weakmore » dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. In this article, recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.« less

Colloquium: Excitons in atomically thin transition metal dichalcogenides

DOE PAGES

Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.; ...

2018-04-04

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weakmore » dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. In this article, recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.« less

Colloquium: Excitons in atomically thin transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.; Heinz, Tony F.; Marie, Xavier; Amand, Thierry; Urbaszek, Bernhard

2018-04-01

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.

Thin, porous metal sheets and methods for making the same

DOEpatents

Liu, Wei; Li, Xiaohong Shari; Canfield, Nathan L.

2015-07-14

Thin, porous metal sheets and methods for forming them are presented to enable a variety of applications and devices. The thin, porous metal sheets are less than or equal to approximately 200 .mu.m thick, have a porosity between 25% and 75% by volume, and have pores with an average diameter less than or equal to approximately 2 .mu.m. The thin, porous metal sheets can be fabricated by preparing a slurry having between 10 and 50 wt % solvent and between 20 and 80 wt % powder of a metal precursor. The average particle size in the metal precursor powder should be between 100 nm and 5 .mu.m.

Thin films of mixed metal compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

PubMed

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Thin film hydrous metal oxide catalysts

DOEpatents

Dosch, Robert G.; Stephens, Howard P.

1995-01-01

Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

Observation of phonon-polaritons in thin flakes of hexagonal boron nitride on gold

NASA Astrophysics Data System (ADS)

Ciano, C.; Giliberti, V.; Ortolani, M.; Baldassarre, L.

2018-04-01

Hexagonal Boron Nitride (hBN) is a layered van der Waals material able to sustain hyperbolic phonon-polaritons within its mid-infrared reststrahlen bands. We study the effect of a metallic substrate adjacent to hBN flakes on the polariton dispersion and on the standing wave patterns in nanostructures by means of mid-infrared nanospectroscopy and nanoimaging. We exploit the gold-coated tip apex for atomic force microscopy to launch polaritons in thin hBN flakes. The photo-thermal induced mechanical resonance is used to detect the amplitude profile of polariton standing waves with a lateral resolution of 30 nm. We observe the polariton excitation spectra on hBN flakes as thin as 4 nm, thanks to the infrared field enhancement in the nanogap between the gold-coated tip apex and an ultraflat gold substrate. The data indicate no major effect of remote screening of the free electrons in gold on the phonon-polariton excitation that appears robust also against geometrical imperfections.

Flexible Polymer/Metal/Polymer and Polymer/Metal/Inorganic Trilayer Transparent Conducting Thin Film Heaters with Highly Hydrophobic Surface.

PubMed

Kang, Tae-Woon; Kim, Sung Hyun; Kim, Cheol Hwan; Lee, Sang-Mok; Kim, Han-Ki; Park, Jae Seong; Lee, Jae Heung; Yang, Yong Suk; Lee, Sang-Jin

2017-09-27

Polymer/metal/polymer and polymer/metal/inorganic trilayer-structured transparent electrodes with fluorocarbon plasma polymer thin film heaters have been proposed. The polymer/metal/polymer and polymer/metal/inorganic transparent conducting thin films fabricated on a large-area flexible polymer substrate using a continuous roll-to-roll sputtering process show excellent electrical properties and visible-light transmittance. They also exhibit water-repelling surfaces to prevent wetting and to remove contamination. In addition, the adoption of a fluorocarbon/metal/fluorocarbon film permits an outer bending radius as small as 3 mm. These films have a sheet resistance of less than 5 Ω sq -1 , sufficient to drive light-emitting diode circuits. The thin film heater with the fluorocarbon/Ag/SiN x structure exhibits excellent heating characteristics, with a temperature reaching 180 °C under the driving voltage of 13 V. Therefore, the proposed polymer/metal/polymer and polymer/metal/inorganic transparent conducting electrodes using polymer thin films can be applied in flexible and rollable displays as well as automobile window heaters and other devices.

Evaluation of space environmental effects on metals and optical thin films on EOIM-3

NASA Technical Reports Server (NTRS)

Vaughn, Jason A.; Linton, Roger C.; Finckenor, Miria M.; Kamenetzky, Rachel R.

1995-01-01

Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

NASA Astrophysics Data System (ADS)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Electrochromic materials, devices and process of making

DOEpatents

Richardson, Thomas J.

2003-11-11

Thin films of transition metal compositions formed with magnesium that are metals, alloys, hydrides or mixtures of alloys, metals and/or hydrides exhibit reversible color changes on application of electric current or hydrogen. Thin films of these materials are suitable for optical switching elements, thin film displays, sun roofs, rear-view mirrors and architectural glass.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

PubMed

Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

2013-09-15

Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane. Copyright © 2013 Elsevier B.V. All rights reserved.

Thin Metallic Films from Solvated Metal Atoms.

DTIC Science & Technology

1987-07-14

platinium , and especially indium are discussed. N, ; ,, -- !, : N) By Dist , , . N S f1 -- ~~r, 821-19 C[ Thin metallic films from solvated metal atoms...metallic films. Cold, palladium, platinium , and especially indium are discussed. 1- INTRQDUCTION In the field of chemistry an active and broad area of

Line-source excited impulsive EM field response of thin plasmonic metal films

NASA Astrophysics Data System (ADS)

Štumpf, Martin; Vandenbosch, Guy A. E.

2013-08-01

In this paper, reflection against and transmission through thin plasmonic metal films, basic building blocks of many plasmonic devices, are analytically investigated directly in the time domain for an impulsive electric and magnetic line-source excitation. The electromagnetic properties of thin metallic films are modeled via the Drude model. The problem is formulated with the help of approximate thin-sheet boundary conditions and the analysis is carried out using the Cagniard-DeHoop technique. Closed-form space-time expressions are found and discussed. The obtained time-domain analytical expressions reveal the existence of the phenomenon of transient oscillatory surface effects along a plasmonic metal thin sheet. Illustrative numerical examples of transmitted/reflected pulsed fields are provided.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy.

PubMed

Öztürk, Zafer; Filez, Matthias; Weckhuysen, Bert M

2017-08-10

The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the chemistries governing the nucleation and growth of zeolitic imidazolate framework (ZIF) thin films, in particular isostructural Co-ZIF-67 and Zn-ZIF-8. First, a single step direct synthesis approach is used to investigate the influence of different synthesis parameters -metal/linker ratio, temperature, and metal type- on the thin film nucleation and growth behaviour. While the metal/linker ratio has a pronounced effect on the thin film nucleation rate, the temperature mainly influences the growth kinetics of nuclei forming the thin film. In addition, the nucleation and growth of ZIF thin films is shown to be highly dependent on the electronegativity of the metal type. Thin-film thickness control can be achieved by using a multistep synthesis strategy, implying repetitive applications of single step deposition under identical synthesis conditions, for which a growth mechanism is proposed. This study provides insight into the influence of synthesis parameters on the ZIF thin film properties, using tools at hand to rationally tune MOF thin film properties. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Infrared broadband metasurface absorber for reducing the thermal mass of a microbolometer.

PubMed

Jung, Joo-Yun; Song, Kyungjun; Choi, Jun-Hyuk; Lee, Jihye; Choi, Dae-Geun; Jeong, Jun-Ho; Neikirk, Dean P

2017-03-27

We demonstrate an infrared broadband metasurface absorber that is suitable for increasing the response speed of a microbolometer by reducing its thermal mass. A large fraction of holes are made in a periodic pattern on a thin lossy metal layer characterised with a non-dispersive effective surface impedance. This can be used as a non-resonant metasurface that can be integrated with a Salisbury screen absorber to construct an absorbing membrane for a microbolometer that can significantly reduce the thermal mass while maintaining high infrared broadband absorption in the long wavelength infrared (LWIR) band. The non-dispersive effective surface impedance can be matched to the free space by optimising the surface resistance of the thin lossy metal layer depending on the size of the patterned holes by using a dc approximation method. In experiments a high broadband absorption was maintained even when the fill factor of the absorbing area was reduced to 28% (hole area: 72%), and it was theoretically maintained even when the fill factor of the absorbing area was reduced to 19% (hole area: 81%). Therefore, a metasurface with a non-dispersive effective surface impedance is a promising solution for reducing the thermal mass of infrared microbolometer pixels.

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures

NASA Astrophysics Data System (ADS)

Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi

2017-05-01

Wide-bandgap oxides exhibiting high electron mobility hold promise for the development of useful electronic and optoelectronic devices as well as for basic research on two-dimensional electron transport phenomena. A perovskite-type tin oxide, BaSnO3, is currently one of such targets owing to distinctly high mobility at room temperature. The challenge to overcome towards the use of BaSnO3 thin films in applications is suppression of dislocation scattering, which is one of the dominant scattering origins for electron transport. Here, we show that the mobility of the BaSnO3 electric-double-layer transistor reaches 300 cm2 V-1 s-1 at 50 K. The improved mobility indicates that charged dislocation scattering is effectively screened by electrostatically doped high-density charge carriers. We also observed metallic conduction persisting down to 2 K, which is attributed to the transition to the degenerate semiconductor. The experimental verification of bulk-level mobility at the densely accumulated surface sheds more light on the importance of suppression of dislocation scattering by interface engineering in doped BaSnO3 thin films for transparent electrode applications.

Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

2016-01-18

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurementmore » revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.« less

Method for production of ceramic oxide and carbide bodies by polymer inclusion and decomposition

DOEpatents

Quinby, Thomas C.

1985-01-01

A method for the preparation of thin, free-standing metal oxide films which are useful as nuclear accelerator target materials. Cations of any metal except those of Group IA and precious metals, such as, U, Zr, Nd, Ce, Th, pr or Cr, are absorbed on a thin film of polymeric material, such as, carboxymethylcellulose, viscose rayon or cellophane. The cation impregnated polymeric material is dried. Then the impregnated film is heated in an inert atmosphere to form a carbonized membrane. The carbonized membrane is oxidized to yield a thin, self-supporting, metal oxide membrane. Or, the membrane can be heated in an inert atmosphere to yield a thin, self-supporting, metal carbide-containing membrane.

Method for production of ceramic oxide and carbide bodies by polymer inclusion and decomposition

DOEpatents

Quinby, T.C.

1984-08-30

A method for the preparation of thin, free-standing metal oxide films which are useful as nuclear accelerator target materials is described. Cations of any metal except those of Group IA and precious metals, such as, U, Zr, Nd, Ce, Th, Pr or Cr, are absorbed on a thin film of polymeric material, such as carboxymethylcellulose, viscose rayon or cellophane. The cation impregnated polymeric material is dried. Then the impregnated film is heated in an inert atmosphere to form a carbonized membrane. The carbonized membrane is oxidized to yield a thin, self-supporting, metal oxide membrane. Or, the membrane can be heated in an inert atmosphere to yield a thin, self-supporting, metal carbide-containing membrane.

Thin-film metal hydrides.

PubMed

Remhof, Arndt; Borgschulte, Andreas

2008-12-01

The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maughan, Bret; Zahl, Percy; Sutter, Peter

Switching the magnetic properties of organic semiconductors on a metal surface has thus far largely been limited to molecule-by-molecule tip-induced transformations in scanned probe experiments. Here we demonstrate with molecular resolution that collective control of activated Kondo screening can be achieved in thin-films of the organic semiconductor titanyl phthalocyanine on Cu(110) to obtain tunable concentrations of Kondo impurities. Using low-temperature scanning tunneling microscopy and spectroscopy, we show that a thermally activated molecular distortion dramatically shifts surface–molecule coupling and enables ensemble-level control of Kondo screening in the interfacial spin system. This is accompanied by the formation of a temperature-dependent Abrikosov–Suhl–Kondo resonancemore » in the local density of states of the activated molecules. This enables coverage-dependent control over activation to the Kondo screening state. Finally, our study thus advances the versatility of molecular switching for Kondo physics and opens new avenues for scalable bottom-up tailoring of the electronic structure and magnetic texture of organic semiconductor interfaces at the nanoscale.« less

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Flexible Ceramic-Metal Insulation Composite and Method of Making

NASA Technical Reports Server (NTRS)

Rasky, Daniel J. (Inventor); Sawko, Paul M. (Inventor); Kilodziej, Paul (Inventor); Kourtides, Demetrius A. (Inventor)

1998-01-01

A method for joining a woven flexible ceramic fabric and a thin metal sheet creating an integral metal surfaced flexible thermal protection article, which methods compress: placing multiple dots of high temperature metallic or fabric and the thin metal sheet in a random or organized pattern, with the proviso that the brazing material covers about 10% or less of the surface of one flat side of the metal sheet; heating the flexible ceramic fabric, brazing material and thin metal sheet for a predetermined period of time to integrally connect the same; and cooling the formed flexible article to ambient temperature. Preferably the flexible ceramic is selected from fibers comprising atoms of silicon, carbon, nitrogen, boron, oxygen or combinations thereof. The flexible thermal protection article produced is also part of the present invention. The thin metal sheet is comprised of titanium, aluminum, chromium, niobium or alloys or combinations thereof. The brazing material is selected from copper/silver or copper/gold or is a ceramic brazing or adhesive material.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

Production and investigation of thin films of metal actinides (Pu, Am, Cm, Bk, Cf)

NASA Astrophysics Data System (ADS)

Radchenko, V. M.; Ryabinin, M. A.; Stupin, V. A.

2010-03-01

Under limited availability of transplutonium metals some special techniques and methods of their production have been developed that combine the process of metal reduction from a chemical compound and preparation of a sample for examination. In this situation the evaporation and condensation of metal onto a substrate becomes the only possible technology. Thin film samples of metallic 244Cm, 248Cm and 249Bk were produced by thermal reduction of oxides with thorium followed by deposition of the metals in the form of thin layers on tantalum substrates. For the production of 249Cf metal in the form of a thin layer the method of thermal reduction of oxide with lanthanum was used. 238Pu and 239Pu samples in the form of films were prepared by direct high temperature evaporation and condensation of the metal onto a substrate. For the production of 241Am films a gram sample of plutonium-241 metal was used containing about 18 % of americium at the time of production. Thermal decomposition of Pt5Am intermetallics in vacuum was used to produce americium metal with about 80% yield. Resistivity of the metallic 249Cf film samples was found to decrease exponentially with increasing temperature. The 249Cf metal demonstrated a tendency to form preferably a DHCP structure with the sample mass increasing. An effect of high specific activity on the crystal structure of 238Pu nuclide thin layers was studied either.

Thin Metallic Films From Solvated Metal Atoms

NASA Astrophysics Data System (ADS)

Trivino, Galo C.; Klabunde, Kenneth J.; Dale, Brock

1988-02-01

Metals were evaporated under vacuum and the metal atoms solvated by excess organic solvents at low temperature. Upon warming stable colloidal metal particles were formed by controlled metal atom clustering. The particles were stabilized toward flocculation by solvation and electrostatic effects. Upon solvent removal the colloidal particles grew to form thin films that were metallic in appearance, but showed higher resistivities than pure metallic films. Gold, palladium, platinium, and especially indium are discussed.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

A review of production methods of carbon nanotube and graphene thin films for electrothermal applications

NASA Astrophysics Data System (ADS)

Janas, D.; Koziol, K. K.

2014-02-01

Electrothermal materials transform electric energy into heat due to the Joule effect. To date, resistive wires made of heavy metal alloys have primarily been used as the heat source in many appliances surrounding us. Recent discoveries in the field of carbon nanostructures revealed that they can offer a spectrum of advantages over the traditional materials. We review the production methods of thin films composed of carbon nanotubes or graphene and depict how they can be used as conductive coatings for electrothermal applications. We screen all reports from the field up to now and highlight the features of designed nanoheaters. A particular focus is placed on the analysis of general findings of how to tune their electrothermal properties, why carbon nanostructure devices operate the way they do and in what aspects they are superior to the currently available materials on the market.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Metal oxide films on metal

DOEpatents

Wu, Xin D.; Tiwari, Prabhat

1995-01-01

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

High-power THz to IR emission by femtosecond laser irradiation of random 2D metallic nanostructures.

PubMed

Zhang, Liangliang; Mu, Kaijun; Zhou, Yunsong; Wang, Hai; Zhang, Cunlin; Zhang, X-C

2015-07-24

Terahertz (THz) spectroscopic sensing and imaging has identified its potentials in a number of areas such as standoff security screening at portals, explosive detection at battle fields, bio-medical research, and so on. With these needs, the development of an intense and broadband THz source has been a focus of THz research. In this work, we report an intense (~10 mW) and ultra-broadband (~150 THz) THz to infrared (IR) source with a Gaussian wavefront, emitted from nano-pore-structured metallic thin films with femtosecond laser pulse excitation. The underlying mechanism has been proposed as thermal radiation. In addition, an intense coherent THz signal was generated through the optical rectification process simultaneously with the strong thermal signal. This unique feature opens up new avenues in biomedical research.

Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

NASA Astrophysics Data System (ADS)

Sievert, James D.; Watkins, James J.; Russell, Thomas P.

2006-03-01

Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Sodium to sodium carbonate conversion process

DOEpatents

Herrmann, Steven D.

1997-01-01

A method of converting radioactive alkali metal into a low level disposable solid waste material. The radioactive alkali metal is atomized and introduced into an aqueous caustic solution having caustic present in the range of from about 20 wt % to about 70 wt % to convert the radioactive alkali metal to a radioactive alkali metal hydroxide. The aqueous caustic containing radioactive alkali metal hydroxide and CO.sub.2 are introduced into a thin film evaporator with the CO.sub.2 present in an amount greater than required to convert the alkali metal hydroxide to a radioactive alkali metal carbonate, and thereafter the radioactive alkali metal carbonate is separated from the thin film evaporator as a dry powder. Hydroxide solutions containing toxic metal hydroxide including one or more metal ions of Sb, As, Ba, Be, Cd, Cr, Pb, Hg, Ni, Se, Ag and T1 can be converted into a low level non-hazardous waste using the thin film evaporator of the invention.

Metamaterial Perfect Absorber Analyzed by a Meta-Cavity Model Consisting of Multilayer Metasurfaces (Postprint)

DTIC Science & Technology

2017-09-05

metamaterial perfect absorber behaves as a meta-cavity bounded between a resonant metasurface and a metallic thin- film reflector. The perfect absorption...cavity quantum electrodynamics devices. 15. SUBJECT TERMS Metamaterial; meta-cavity; metallic thin- film reflector; Fabry-Perot cavity resonance...metamaterial perfect absorber behaves as a meta-cavity bounded between a resonant metasurface and a metallic thin- film reflector. The perfect absorption is

Polymer-assisted aqueous deposition of metal oxide films

DOEpatents

Li, DeQuan [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM

2003-07-08

An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

All-alkoxide synthesis of strontium-containing metal oxides

DOEpatents

Boyle, Timothy J.

2001-01-01

A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

Two-component scattering model and the electron density spectrum

NASA Astrophysics Data System (ADS)

Zhou, A. Z.; Tan, J. Y.; Esamdin, A.; Wu, X. J.

2010-02-01

In this paper, we discuss a rigorous treatment of the refractive scintillation caused by a two-component interstellar scattering medium and a Kolmogorov form of density spectrum. It is assumed that the interstellar scattering medium is composed of a thin-screen interstellar medium (ISM) and an extended interstellar medium. We consider the case that the scattering of the thin screen concentrates in a thin layer represented by a δ function distribution and that the scattering density of the extended irregular medium satisfies the Gaussian distribution. We investigate and develop equations for the flux density structure function corresponding to this two-component ISM geometry in the scattering density distribution and compare our result with the observations. We conclude that the refractive scintillation caused by this two-component ISM scattering gives a more satisfactory explanation for the observed flux density variation than does the single extended medium model. The level of refractive scintillation is strongly sensitive to the distribution of scattering material along the line of sight (LOS). The theoretical modulation indices are comparatively less sensitive to the scattering strength of the thin-screen medium, but they critically depend on the distance from the observer to the thin screen. The logarithmic slope of the structure function is sensitive to the scattering strength of the thin-screen medium, but is relatively insensitive to the thin-screen location. Therefore, the proposed model can be applied to interpret the structure functions of flux density observed in pulsar PSR B2111 + 46 and PSR B0136 + 57. The result suggests that the medium consists of a discontinuous distribution of plasma turbulence embedded in the interstellar medium. Thus our work provides some insight into the distribution of the scattering along the LOS to the pulsar PSR B2111 + 46 and PSR B0136 + 57.

Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.

PubMed

Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

2012-01-01

Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Flow-induced resonance of screen-covered cavities

NASA Technical Reports Server (NTRS)

Soderman, Paul T.

1990-01-01

An experimental study of screen-covered cavities exposed to airflow tangent to the screen is described. The term screen refers to a thin metal plate perforated with a repetitive pattern of round holes. The purpose was to find the detailed aerodynamic and acoustic mechanisms responsible for screen-covered cavity resonance and to find ways to control the pressure oscillations. Results indicate that strong cavity acoustic resonances are created by screen orifices that shed vortices which couple resonance by choosing hole spacings such that shed vortices do not arrive at a downstream orifice in synchronization with cavity pressure oscillations. The proper hole pattern is effective at all airspeeds. It was also discovered that a reduction of orifice size tended to weaken the screen/cavity interaction regardless of hole pattern, probably because of viscous flow losses at the orifices. The screened cavities that resonated did so at much higher frequencies than the equivalent open cavity. The classical large eddy phenomenon occurs at the relatively small scale of the orifices (the excitation is typically of high frequency). The wind tunnel study was made at airspeeds from 0 to 100m/sec. The 457-mm-long by 1.09-m-high rectangular cavities had length-to-depth ratios greater than one, which is indicative of shallow cavities. The cavity screens were perforated in straight rows and columns with hole diameters ranging from 1.59 to 6.35 mm and with porosities from 2.6 to 19.6 percent.

Method of bonding metals to ceramics

DOEpatents

Maroni, Victor A.

1991-01-01

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, An and alloys thereof.

Single crystalline thin films as a novel class of electrocatalysts

DOE PAGES

Snyder, Joshua; Markovic, Nenad; Stamenkovic, Vojislav

2013-01-01

The ubiquitous use of single crystal metal electrodes has garnered invaluable insight into the relationship between surface atomic structure and functional electrochemical properties. But, the sensitivity of their electrochemical response to surface orientation and the amount of precious metal required can limit their use. We present here a generally applicable procedure for producing thin metal films with a large proportion of atomically flat (111) terraces without the use of an epitaxial template. Thermal annealing in a controlled atmosphere induces long-range ordering of magnetron sputtered thin metal films deposited on an amorphous substrate. The ordering transition in these thin metal filmsmore » yields characteristic (111) electrochemical signatures with minimal amount of material and provides an adequate replacement for oriented bulk single crystals. Our procedure can be generalized towards a novel class of practical multimetallic thin film based electrocatalysts with tunable near-surface compositional profile and morphology. Annealing of atomically corrugated sputtered thin film Pt-alloy catalysts yields an atomically smooth structure with highly crystalline, (111)-like ordered and Pt segregated surface that displays superior functional properties, bridging the gap between extended/bulk surfaces and nanoscale systems.« less

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Metal Induced Growth of Si Thin Films and NiSi Nanowires

DTIC Science & Technology

2010-02-25

Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

Study on the radial vibration of a piezoelectric ceramic thin ring with an inner metal disc

NASA Astrophysics Data System (ADS)

Lin, Shuyu

2006-11-01

In this paper, a piezoelectric ceramic thin ring with an inner metal disc is studied. The radial vibrations of a metal thin disc and a piezoelectric ceramic thin ring are analysed. Their electro-mechanical equivalent circuits in radial vibration are obtained. Based on the electro-mechanical equivalent circuits and the radial boundary conditions, the composite electro-mechanical equivalent circuit of the combination of a piezoelectric ceramic thin ring and a metal disc is obtained and the resonance and anti-resonance frequency equations are derived. The relationship between the resonance frequency, the anti-resonance frequency, the effective electro-mechanical coupling coefficient and the geometrical dimensions is analysed. The resonance and anti-resonance frequencies are measured using the Agilent Precision Impedance Analyzer. It is illustrated that the measured radial resonance and anti-resonance frequencies are in good agreement with the theoretical results.

Ultra thin metallic coatings to control near field radiative heat transfer

NASA Astrophysics Data System (ADS)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Evaluations of Thin Cirrus Contamination and Screening in Ground Aerosol Observations Using Collocated Lidar Systems

NASA Technical Reports Server (NTRS)

Huang, Jingfeng; Hsu, N. Christina; Tsay, Si-Chee; Holben, Brent N.; Welton, Ellsworth J.; Smirnov, Alexander; Jeong, Myeong-Jae; Hansell, Richard A.; Berkoff, Timothy A.

2012-01-01

Cirrus clouds, particularly sub visual high thin cirrus with low optical thickness, are difficult to be screened in operational aerosol retrieval algorithms. Collocated aerosol and cirrus observations from ground measurements, such as the Aerosol Robotic Network (AERONET) and the Micro-Pulse Lidar Network (MPLNET), provide us with an unprecedented opportunity to examine the susceptibility of operational aerosol products to thin cirrus contamination. Quality assured aerosol optical thickness (AOT) measurements were also tested against the CALIPSO vertical feature mask (VFM) and the MODIS-derived thin cirrus screening parameters for the purpose of evaluating thin cirrus contamination. Key results of this study include: (1) Quantitative evaluations of data uncertainties in AERONET AOT retrievals are conducted. Although AERONET cirrus screening schemes are successful in removing most cirrus contamination, strong residuals displaying strong spatial and seasonal variability still exist, particularly over thin cirrus prevalent regions during cirrus peak seasons, (2) Challenges in matching up different data for analysis are highlighted and corresponding solutions proposed, and (3) Estimation of the relative contributions from cirrus contamination to aerosol retrievals are discussed. The results are valuable for better understanding and further improving ground aerosol measurements that are critical for aerosol-related climate research.

Structurally colored biopolymer thin films for detection of dissolved metal ions in aqueous solution

NASA Astrophysics Data System (ADS)

Cathell, Matthew David

Natural polymers, such as the polysaccharides alginate and chitosan, are noted sorbents of heavy metals. Their polymer backbone structures are rich in ligands that can interact with metal ions through chelation, electrostatics, ion exchange and nonspecific mechanisms. These water-soluble biopolymer materials can be processed into hydrogel thin films, creating high surface area interfaces ideal for binding and sequestering metal ions from solution. By virtue of their uniform nanoscale dimensions (with thicknesses smaller than wavelengths of visible light) polymer thin films exhibit structure-based coloration. This phenomenon, frequently observed in nature, causes the transparent and essentially colorless films to reflect light in a wide array of colors. The lamellar film structures act as one-dimensional photonic crystals, allowing selective reflection of certain wavelengths of light while minimizing other wavelengths by out-of-phase interference. The combination of metal-binding and reflective properties make alginate and chitosan thin films attractive candidates for analyte sensing. Interactions with metal ions can induce changes in film thicknesses and refractive indices, thus altering the path of light reflected through the film. Small changes in dimensional or optical properties can lead to shifts in film color that are perceivable by the unaided eye. These thin films offer the potential for optical sensing of toxic dissolved materials without the need for instrumentation, external power or scientific expertise. With the use of a spectroscopic ellipsometer and a fiber optic reflectance spectrometer, the physical and optical characteristics of biopolymer thin films have been characterized in response to 50 ppm metal ion solutions. It has been determined that metal interactions can lead to measurable changes in both film thicknesses and effective refractive indices. The intrinsic response behaviors of alginate and chitosan, as well as the responses of modified derivatives of these materials, have been investigated. It has been found that the natural metal selectivity of biopolymer films can be tuned and refined by adjusting the ligand environment through backbone modification. Other investigations have also been undertaken, including in situ monitoring of biopolymer---metal interactions and quantification of thin film metal-binding capacities.

Method of forming particulate materials for thin-film solar cells

DOEpatents

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Platinum-coated non-noble metal-noble metal core-shell electrocatalysts

DOEpatents

Adzic, Radoslav; Zhang, Junliang; Mo, Yibo; Vukmirovic, Miomir

2015-04-14

Core-shell particles encapsulated by a thin film of a catalytically active metal are described. The particles are preferably nanoparticles comprising a non-noble core with a noble metal shell which preferably do not include Pt. The non-noble metal-noble metal core-shell nanoparticles are encapsulated by a catalytically active metal which is preferably Pt. The core-shell nanoparticles are preferably formed by prolonged elevated-temperature annealing of nanoparticle alloys in an inert environment. This causes the noble metal component to surface segregate and form an atomically thin shell. The Pt overlayer is formed by a process involving the underpotential deposition of a monolayer of a non-noble metal followed by immersion in a solution comprising a Pt salt. A thin Pt layer forms via the galvanic displacement of non-noble surface atoms by more noble Pt atoms in the salt. The overall process is a robust and cost-efficient method for forming Pt-coated non-noble metal-noble metal core-shell nanoparticles.

Rapid Biochemical Mixture Screening by Three-Dimensional Patterned Multifunctional Substrate with Ultra-Thin Layer Chromatography (UTLC) and Surface Enhanced Raman Scattering (SERS).

PubMed

Lee, Bi-Shen; Lin, Pi-Chen; Lin, Ding-Zheng; Yen, Ta-Jen

2018-01-11

We present a three-dimensional patterned (3DP) multifunctional substrate with the functions of ultra-thin layer chromatography (UTLC) and surface enhanced Raman scattering (SERS), which simultaneously enables mixture separation, target localization and label-free detection. This multifunctional substrate is comprised of a 3DP silicon nanowires array (3DP-SiNWA), decorated with silver nano-dendrites (AgNDs) atop. The 3DP-SiNWA is fabricated by a facile photolithographic process and low-cost metal assisted chemical etching (MaCE) process. Then, the AgNDs are decorated onto 3DP-SiNWA by a wet chemical reduction process, obtaining 3DP-AgNDs@SiNWA multifunctional substrates. With various patterns designed on the substrates, the signal intensity could be maximized by the excellent confinement and concentrated effects of patterns. By using this 3DP-AgNDs@SiNWA substrate to scrutinize the mixture of two visible dyes, the individual target could be recognized and further boosted the Raman signal of target 15.42 times comparing to the un-patterned AgNDs@SiNWA substrate. Therefore, such a three-dimensional patterned multifunctional substrate empowers rapid mixture screening, and can be readily employed in practical applications for biochemical assays, food safety and other fields.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

PubMed

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Composite Pulse Tube

NASA Technical Reports Server (NTRS)

Martin, Jerry L.; Cloyd, Jason H.

2007-01-01

A modification of the design of the pulse tube in a pulse-tube cryocooler reduces axial thermal conductance while preserving radial thermal conductance. It is desirable to minimize axial thermal conductance in the pulse-tube wall to minimize leakage of heat between the warm and cold ends of the pulse tube. At the same time, it is desirable to maximize radial thermal conductance at the cold end of the pulse tube to ensure adequate thermal contact between (1) a heat exchanger in the form of a stack of copper screens inside the pulse tube at the cold end and (2) the remainder of the cold tip, which is the object to which the heat load is applied and from which heat must be removed. The modified design yields a low-heat-leak pulse tube that can be easily integrated with a cold tip. A typical pulse tube of prior design is either a thin-walled metal tube or a metal tube with a nonmetallic lining. It is desirable that the outer surface of a pulse tube be cylindrical (in contradistinction to tapered) to simplify the design of a regenerator that is also part of the cryocooler. Under some conditions, it is desirable to taper the inner surface of the pulse tube to reduce acoustic streaming. The combination of a cylindrical outer surface and a tapered inner surface can lead to unacceptably large axial conduction if the pulse tube is made entirely of metal. Making the pulse-tube wall of a nonmetallic, lowthermal- conductivity material would not solve the problem because the wall would not afford the needed thermal contact for the stack of screens in the cold end. The modified design calls for fabricating the pulse tube in two parts: a longer, nonmetallic part that is tapered on the inside and cylindrical on the outside and a shorter, metallic part that is cylindrical on both the inside and the outside. The nonmetallic part can be made from G-10 fiberglass-reinforced epoxy or other low-thermal-conductivity, cryogenically compatible material. The metallic part must have high thermal conductivity in the cryogenic temperature range and would typically be made of pure copper to satisfy this requirement. The metallic part is bonded to the nonmetallic part with epoxy. Copper screens are inserted in the metallic part to form the cold-end heat exchanger, then the assembled pulse tube is inserted in the cold tip.

Prevalence of Failure due to Adverse Reaction to Metal Debris in Modern, Medium and Large Diameter Metal-on-Metal Hip Replacements – The Effect of Novel Screening Methods: Systematic Review and Metaregression Analysis

PubMed Central

Reito, Aleksi; Lainiala, Olli; Elo, Petra; Eskelinen, Antti

2016-01-01

Metal-on-metal (MoM) hip replacements were used for almost a decade before adverse reactions to metal debris (ARMD) were found to be a true clinical problem. Currently, there is a paucity of evidence regarding the usefulness of systematic screening for ARMD. We implemented a systematic review and meta-analysis to establish the prevalence of revision confirmed ARMD stratified by the use of different screening protocols in patients with MoM hip replacements. Five levels of screening were identified: no screening (level 0), targeted blood metal ion measurement and/or cross-sectional imaging (level 1), metal ion measurement without imaging (level 2), metal ion measurement with targeted imaging (level 3) and comprehensive screening (both metal ions and imaging for all; level 4). 122 studies meeting our eligibility criteria were included in analysis. These studies included 144 study arms: 100 study arms with hip resurfacings, 33 study arms with large-diameter MoM total hip replacements (THR), and 11 study arms with medium-diameter MoM THRs. For hip resurfacing, the lowest prevalence of ARMD was seen with level 0 screening (pooled prevalence 0.13%) and the highest with level 4 screening (pooled prevalace 9.49%). Pooled prevalence of ARMD with level 0 screening was 0.29% and with level 4 screening 21.3% in the large-diameter MoM THR group. In metaregression analysis of hip resurfacings, level 4 screening was superior with regard to prevalence of ARMD when compared with other levels. In the large diameter THR group level 4 screening was superior to screening 0,2 and 3. These outcomes were irrespective of follow-up time or study publication year. With hip resurfacings, routine cross-sectional imaging regardless of clinical findings is advisable. It is clear, however, that targeted metal ion measurement and/or imaging is not sufficient in the screening for ARMD in any implant concepts. However, economic aspects should be weighed when choosing the preferred screening level. PMID:26930057

Method of bonding metals to ceramics

DOEpatents

Maroni, V.A.

1991-04-23

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

Extending the 3ω method: thermal conductivity characterization of thin films.

PubMed

Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

2013-08-01

A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

DTIC Science & Technology

2017-12-04

34High-Concentration III-V Multijunction Solar Cells," 2017, <http://www.nrel.gov/ pv /high-concentration-iii-v-multijunction- solar - cells.html>. O. K...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR ...0242 Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Metasurface Salisbury screen: achieving ultra-wideband microwave absorption.

PubMed

Zhou, Ziheng; Chen, Ke; Zhao, Junming; Chen, Ping; Jiang, Tian; Zhu, Bo; Feng, Yijun; Li, Yue

2017-11-27

The metasurfaces have recently been demonstrated to provide full control of the phase responses of electromagnetic (EM) wave scattering over subwavelength scales, enabling a wide range of practical applications. Here, we propose a comprehensive scheme for the efficient and flexible design of metasurface Salisbury screen (MSS) capable of absorbing the impinging EM wave in an ultra-wide frequency band. We show that properly designed reflective metasurface can be used to substitute the metallic ground of conventional Salisbury screen for generating diverse resonances in a desirable way, thus providing large controllability over the absorption bandwidth. Based on this concept, we establish an equivalent circuit model to qualitatively analysis the resonances in MSS and design algorithms to optimize the overall performance of the MSS. Experiments have been carried out to demonstrate that the absorption bandwidth from 6 GHz to 30 GHz with an efficiency higher than 85% can be achieved by the proposal, which is apparently much larger than that of conventional Salisbury screen (7 GHz - 17 GHz). The proposed concept of MSS could offer opportunities for flexibly designing thin electromagnetic absorbers with simultaneously ultra-wide bandwidth, polarization insensitivity, and wide incident angle, exhibiting promising potentials for many applications such as in EM compatibility, stealth technique, etc.

One Step Assembly of Thin Films of Carbon Nanotubes on Screen Printed Interface for Electrochemical Aptasensing of Breast Cancer Biomarker.

PubMed

Nawaz, Muhammad Azhar Hayat; Rauf, Sajid; Catanante, Gaelle; Nawaz, Mian Hasnain; Nunes, Gilvanda; Marty, Jean Louis; Hayat, Akhtar

2016-10-06

Thin films of organic moiety functionalized carbon nanotubes (CNTs) from a very well-dispersed aqueous solution were designed on a screen printed transducer surface through a single step directed assembly methodology. Very high density of CNTs was obtained on the screen printed electrode surface, with the formation of a thin and uniform layer on transducer substrate. Functionalized CNTs were characterized by X-ray diffraction spectroscopy (XRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and Brunauer-Emmett- Teller (BET) surface area analyzer methodologies, while CNT coated screen printed transducer platform was analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The proposed methodology makes use of a minimum amount of CNTs and toxic solvents, and is successfully demonstrated to form thin films over macroscopic areas of screen printed carbon transducer surface. The CNT coated screen printed transducer surface was integrated in the fabrication of electrochemical aptasensors for breast cancer biomarker analysis. This CNT coated platform can be applied to immobilize enzymes, antibodies and DNA in the construction of biosensor for a broad spectrum of applications.

One Step Assembly of Thin Films of Carbon Nanotubes on Screen Printed Interface for Electrochemical Aptasensing of Breast Cancer Biomarker

PubMed Central

Nawaz, Muhammad Azhar Hayat; Rauf, Sajid; Catanante, Gaelle; Nawaz, Mian Hasnain; Nunes, Gilvanda; Louis Marty, Jean; Hayat, Akhtar

2016-01-01

Thin films of organic moiety functionalized carbon nanotubes (CNTs) from a very well-dispersed aqueous solution were designed on a screen printed transducer surface through a single step directed assembly methodology. Very high density of CNTs was obtained on the screen printed electrode surface, with the formation of a thin and uniform layer on transducer substrate. Functionalized CNTs were characterized by X-ray diffraction spectroscopy (XRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and Brunauer–Emmett–Teller (BET) surface area analyzer methodologies, while CNT coated screen printed transducer platform was analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The proposed methodology makes use of a minimum amount of CNTs and toxic solvents, and is successfully demonstrated to form thin films over macroscopic areas of screen printed carbon transducer surface. The CNT coated screen printed transducer surface was integrated in the fabrication of electrochemical aptasensors for breast cancer biomarker analysis. This CNT coated platform can be applied to immobilize enzymes, antibodies and DNA in the construction of biosensor for a broad spectrum of applications. PMID:27782067

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

Thin metal nanostructures: synthesis, properties and applications

PubMed Central

Fan, Zhanxi; Huang, Xiao; Tan, Chaoliang

2015-01-01

Two-dimensional nanomaterials, especially graphene and single- or few-layer transition metal dichalcogenide nanosheets, have attracted great research interest in recent years due to their distinctive physical, chemical and electronic properties as well as their great potentials for a broad range of applications. Recently, great efforts have also been devoted to the controlled synthesis of thin nanostructures of metals, one of the most studied traditional materials, for various applications. In this minireview, we review the recent progress in the synthesis and applications of thin metal nanostructures with a focus on metal nanoplates and nanosheets. First of all, various methods for the synthesis of metal nanoplates and nanosheets are summarized. After a brief introduction of their properties, some applications of metal nanoplates and nanosheets, such as catalysis, surface enhanced Raman scattering (SERS), sensing and near-infrared photothermal therapy are described. PMID:28553459

Sodium to sodium carbonate conversion process

DOEpatents

Herrmann, S.D.

1997-10-14

A method is described for converting radioactive alkali metal into a low level disposable solid waste material. The radioactive alkali metal is atomized and introduced into an aqueous caustic solution having caustic present in the range of from about 20 wt % to about 70 wt % to convert the radioactive alkali metal to a radioactive alkali metal hydroxide. The aqueous caustic containing radioactive alkali metal hydroxide and CO{sub 2} are introduced into a thin film evaporator with the CO{sub 2} present in an amount greater than required to convert the alkali metal hydroxide to a radioactive alkali metal carbonate, and thereafter the radioactive alkali metal carbonate is separated from the thin film evaporator as a dry powder. Hydroxide solutions containing toxic metal hydroxide including one or more metal ions of Sb, As, Ba, Be, Cd, Cr, Pb, Hg, Ni, Se, Ag and Tl can be converted into a low level non-hazardous waste using the thin film evaporator of the invention. 3 figs.

Band-bending induced by charged defects and edges of atomically thin transition metal dichalcogenide films

NASA Astrophysics Data System (ADS)

Le Quang, T.; Nogajewski, K.; Potemski, M.; Dau, M. T.; Jamet, M.; Mallet, P.; Veuillen, J.-Y.

2018-07-01

We report scanning tunneling microscopy/spectroscopy (STM/STS) investigations of the band-bending in the vicinity of charged point defects and edges of monolayer MoSe2 and mono- and trilayer WSe2 films deposited on graphitized silicon carbide substrates. By tracing the spatial evolution of the structures of the STS spectra, we evaluate the magnitude and the extent of the band-bending to be equal to few hundreds milielectronvolts and several nanometres, respectively. With the aid of a simple electrostatic model, we show that the spatial variation of the Coulomb potential close to the film edges can be well reproduced by taking into account the metallic screening by graphene. Additionally, the analysis of our data for trilayer WSe2 provides reasonable estimations of its dielectric constant () and of the magnitude of the charge trapped at the defect site (Q  =  +e).

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

PubMed

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (<10 V). In addition, outstanding mechanical flexibility of printed nanotube thin-film transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

Giant perpendicular magnetic anisotropy in Fe/III-V nitride thin films

PubMed Central

2018-01-01

Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the (0001¯) N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between x2 − y2 and xy orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces. PMID:29670948

The Gamma-Ray Laser Project

DTIC Science & Technology

1989-10-01

rabbits, P to flat planchettes , F to metallic foils, and B to scintillation bottles. The 18Ta sample consisted of a dusting of oxide on a thin aluminum...slower class consisted either of thin metallic disks or metallic chips or chemical compounds contained within flat polyethylene planchettes . 16 N00014-86

The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

DTIC Science & Technology

2016-02-01

BST barium strontium titanate εr dielectric constant MIM metal /insulator/ metal MOSD metal organic spin deposition PtSi platinum silicide RF...improvement. In addition, BST films processed via solution metal organic spin deposition, which yield a lower dielectric range of 150–335, also...layers. This report details how we used solution and physical deposition to fabricate thin films via radio frequency (RF) sputtering and metal

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

NASA Astrophysics Data System (ADS)

Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

2001-08-01

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors.

Mathematic model analysis of Gaussian beam propagation through an arbitrary thickness random phase screen.

PubMed

Tian, Yuzhen; Guo, Jin; Wang, Rui; Wang, Tingfeng

2011-09-12

In order to research the statistical properties of Gaussian beam propagation through an arbitrary thickness random phase screen for adaptive optics and laser communication application in the laboratory, we establish mathematic models of statistical quantities, which are based on the Rytov method and the thin phase screen model, involved in the propagation process. And the analytic results are developed for an arbitrary thickness phase screen based on the Kolmogorov power spectrum. The comparison between the arbitrary thickness phase screen and the thin phase screen shows that it is more suitable for our results to describe the generalized case, especially the scintillation index.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

NASA Astrophysics Data System (ADS)

Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

2002-02-01

Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

Metal-in-metal localized surface plasmon resonance

NASA Astrophysics Data System (ADS)

Smith, G. B.; Earp, A. A.

2010-01-01

Anomalous strong resonances in silver and gold nanoporous thin films which conduct are found to arise from isolated metal nano-islands separated from the surrounding percolating metal network by a thin loop of insulator. This observed resonant optical response is modelled. The observed peak position is in agreement with the observed average dimensions of the silver core and insulator shell. As the insulating ring thickness shrinks, the resonance moves to longer wavelengths and strengthens. This structure is the Babinet's principle counterpart of dielectric core-metal shell nanoparticles embedded in dielectric. Like for the latter, tuning of resonant absorption is possible, but here the matrix reflects rather than transmits, and tuning to longer wavelengths is more practical. A new class of metal mirror occurring as a single thin layer is identified using the same resonances in dense metal mirrors. Narrow band deep localized dips in reflectance result.

Reduction of methanol crossover by thin cracked metal barriers at the interface between membrane and electrode in direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Jang, Segeun; Kim, Sang Moon; Ahn, Chi-Yeong; Hwang, Wonchan; Cho, Yong-Hun; Sung, Yung-Eun; Choi, Mansoo

2017-09-01

This work reports the successful reduction in methanol crossover by creating a thin cracked metal barrier at the interface between a Nafion® membrane and an electrode in direct methanol fuel cells (DMFCs). The cracks are generated by simple mechanical stretching of a metal deposited Nafion® membrane as a result of the elastic mismatch between the two attached surfaces. The cracked metal barriers with varying strains (∼0.5 and ∼1.0) are investigated and successfully incorporated into the DMFC. Remarkably, the membrane electrode assembly with the thin metal crack exhibits comparable ohmic resistance as well as reduction of methanol crossover, which enhanced the device performance.

The interaction of small particles and thin films of metals with gases. I - A brief review of the early stages of oxide formation

NASA Technical Reports Server (NTRS)

Poppa, H.

1976-01-01

Existing work on gas-solid reactions making use of thin film technologies is reviewed. The discussion concentrates on two major areas of gas-metal interactions: chemisorption and the early stages of oxidation of metals (characterized by a non-volatile reaction product) and catalytic surface reactions (featuring volatile reaction products). A brief survey of oxide formation on metals is presented. Here it is of importance to distinguish between reactions on continuous thin film substrates and reactions on particulate deposits. Small particle-gas interactions also affect the nucleation, growth and sintering processes of thin films. It is shown that various combinations of UHV and high resolution electron microscopy techniques, which include in situ experimentation, can provide the appropriate tools for studying angstrom particle chemistry.

Dialkyldiselenophosphinato-metal complexes - a new class of single source precursors for deposition of metal selenide thin films and nanoparticles

NASA Astrophysics Data System (ADS)

Malik, Sajid N.; Akhtar, Masood; Revaprasadu, Neerish; Qadeer Malik, Abdul; Azad Malik, Mohammad

2014-08-01

We report here a new synthetic approach for convenient and high yield synthesis of dialkyldiselenophosphinato-metal complexes. A number of diphenyldiselenophosphinato-metal as well as diisopropyldiselenophosphinato-metal complexes have been synthesized and used as precursors for deposition of semiconductor thin films and nanoparticles. Cubic Cu2-xSe and tetragonal CuInSe2 thin films have been deposited by AACVD at 400, 450 and 500 °C whereas cubic PbSe and tetragonal CZTSe thin films have been deposited through doctor blade method followed by annealing. SEM investigations revealed significant differences in morphology of the films deposited at different temperatures. Preparation of Cu2-xSe and In2Se3 nanoparticles using diisopropyldiselenophosphinato-metal precursors has been carried out by colloidal method in HDA/TOP system. Cu2-xSe nanoparticles (grown at 250 °C) and In2Se3 nanoparticles (grown at 270 °C) have a mean diameter of 5.0 ± 1.2 nm and 13 ± 2.5 nm, respectively.

Liquid-based cytology for primary cervical cancer screening: a multi-centre study

PubMed Central

Monsonego, J; Autillo-Touati, A; Bergeron, C; Dachez, R; Liaras, J; Saurel, J; Zerat, L; Chatelain, P; Mottot, C

2001-01-01

The aim of this six-centre, split-sample study was to compare ThinPrep fluid-based cytology to the conventional Papanicolaou smear. Six cytopathology laboratories and 35 gynaecologists participated. 5428 patients met the inclusion criteria (age > 18 years old, intact cervix, informed consent). Each cervical sample was used first to prepare a conventional Pap smear, then the sampling device was rinsed into a PreservCyt vial, and a ThinPrep slide was made. Screening of slide pairs was blinded (n = 5428). All non-negative concordant cases (n = 101), all non-concordant cases (n = 206), and a 5% random sample of concordant negative cases (n = 272) underwent review by one independent pathologist then by the panel of 6 investigators. Initial (blinded) screening results for ThinPrep and conventional smears were correlated. Initial diagnoses were correlated with consensus cytological diagnoses. Differences in disease detection were evaluated using McNemar's test. On initial screening, 29% more ASCUS cases and 39% more low-grade squamous intraepithelial lesions (LSIL) and more severe lesions (LSIL+) were detected on the ThinPrep slides than on the conventional smears (P = 0.001), including 50% more LSIL and 18% more high-grade SIL (HSIL). The ASCUS:SIL ratio was lower for the ThinPrep method (115:132 = 0.87:1) than for the conventional smear method (89:94 = 0.95:1). The same trend was observed for the ASCUS/AGUS:LSIL ratio. Independent and consensus review confirmed 145 LSIL+ diagnoses; of these, 18% more had been detected initially on the ThinPrep slides than on the conventional smears (P = 0.041). The ThinPrep Pap Test is more accurate than the conventional Pap test and has the potential to optimize the effectiveness of primary cervical cancer screening. © 2001 Cancer Research Campaign http://www.bjcancer.com PMID:11161401

Defect-Controlled Preparation of UiO-66 Metal-Organic Framework Thin Films with Molecular Sieving Capability.

PubMed

Zhang, Caiqin; Zhao, Yajing; Li, Yali; Zhang, Xuetong; Chi, Lifeng; Lu, Guang

2016-01-01

Metal-organic framework (MOF) UiO-66 thin films are solvothermally grown on conducting substrates. The as-synthesized MOF thin films are subsequently dried by a supercritical process or treated with polydimethylsiloxane (PDMS). The obtained UiO-66 thin films show excellent molecular sieving capability as confirmed by the electrochemical studies for redox-active species with different sizes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Propagation in Striated Media

DTIC Science & Technology

1976-05-01

random walk photon scattering, geometric optics refraction at a thin phase screen, plane wave scattering from a thin screen in the Fraunhofer limit and...significant cases. In the geometric optics regime the distribution of density of allowable multipath rays is gsslanly distributed and the power...3.1 Random Walk Approach to Scattering 10 3.2 Phase Screen Approximation to Strong Scattering 13 3.3 Ray Optics and Stationary Phase Analysis 21 3,3,1

Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels.

PubMed

Subramanian, Balasubramanian; Maruthamuthu, Sundaram; Rajan, Senthilperumal Thanka

2015-01-01

Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.%) of approximately 1.5 μm and 3 μm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature.

The Study of Galactic Disk Kinematics with SCUSS and SDSS Data

NASA Astrophysics Data System (ADS)

Peng, Xiyan; Wu, Zhenyu; Qi, Zhaoxiang; Du, Cuihua; Ma, Jun; Zhou, Xu; Jia, Yunpeng; Wang, Songhu

2018-07-01

We derive chemical and kinematics properties of G and K dwarfs from the SCUSS and SDSS data. We aim to characterize and explore the properties of the Galactic disk in order to understand their origins and evolutions. A kinematics approach is used to separate Galactic stellar populations into the likely thin disk and thick disk sample. Then, we explore rotational velocity gradients with metallicity of the Galactic disks to provide constraints on the various formation models. We identify a negative gradient of the rotational velocity of the thin disk stars with [Fe/H], ‑18.2 ± 2.3 km s‑1 dex‑1. For the thick disk, we identify a positive gradient of the rotational velocity with [Fe/H], 41.7 ± 6.1 km s‑1 dex‑1. The eccentricity does not change with metallicity for the thin disk sample. Thick disk stars exhibit a trend of orbital eccentricity with metallicity (‑0.13 dex‑1). The thin disk shows a negative metallicity gradient with Galactocentric radial distance R, while the thick disk shows a flat radial metallicity gradient. Our results suggest that radial migration may play an important role in the formation and evolution of the thin disk.

Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

PubMed Central

Subramanian, Balasubramanian; Maruthamuthu, Sundaram; Rajan, Senthilperumal Thanka

2015-01-01

Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.%) of approximately 1.5 μm and 3 μm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. PMID:26491304

Metal-Coated Optical Fibers for High Temperature Applications

NASA Technical Reports Server (NTRS)

Zeakes, Jason; Murphy, Kent; Claus, Richard; Greene, Jonathan; Tran, Tuan

1996-01-01

This poster will highlight on-going research at the Virginia Tech Fiber & Electro-Optics Research Center (FEORC) in the area of thin films on optical fibers. Topics will include the sputter deposition of metals and metal; alloys onto optical fiber and fiber optic sensors for innovative applications. Specific information will be available on thin film fiber optic hydrogen sensors, corrosion sensors, and metal-coated optical fiber for high temperature aerospace applications.

Liquid-based cervical cytology using ThinPrep technology: weighing the pros and cons in a cost-effectiveness analysis.

PubMed

de Bekker-Grob, Esther W; de Kok, Inge M C M; Bulten, Johan; van Rosmalen, Joost; Vedder, Judith E M; Arbyn, Marc; Klinkhamer, Paul J J M; Siebers, Albertus G; van Ballegooijen, Marjolein

2012-08-01

Cervical cancer screening with liquid-based cytology (LBC) has been developed as an alternative to the conventional Papanicolaou (CP) smear. Cost-effectiveness is one of the issues when evaluating LBC. Based on the results of a Dutch randomised controlled trial, we conducted cost-effectiveness threshold analyses to investigate under what circumstances manually screened ThinPrep LBC is cost-effective for screening. The MISCAN-Cervix microsimulation model and data from the Dutch NETHCON trial (including 89,784 women) were used to estimate the costs and (quality-adjusted) life years ((QA)LYs) gained for EU screening schedules, varying cost-effectiveness threshold values. Screening strategies were primary cytological screening with LBC or CP, and triage with human papillomavirus (HPV) testing. Threshold analyses showed that screening with LBC as a primary test can be cost-effective if LBC is less than 3.2 more costly per test than CP, if the sensitivity of LBC is at least 3-5 % points higher than CP, if the quality of life for women in triage follow-up is only 0.39, or if the rate of inadequate CP smears is at least 16.2 %. Regarding test characteristics and costs of LBC and CP, only under certain conditions will a change from CP to manually screened ThinPrep LBC be cost-effective. If none of these conditions are met, implementation of manually screened ThinPrep LBC seems warranted only if there are advantages other than cost-effectiveness. Further research is needed to establish whether other LBC systems will be more favorable with regard to cost-effectiveness.

A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors.

PubMed

Liang, Jiajie; Tong, Kwing; Pei, Qibing

2016-07-01

A water-based silver-nanowire (AgNW) ink is formulated for screen printing. Screen-printed AgNW patterns have uniform sharp edges, ≈50 μm resolution, and electrical conductivity as high as 4.67 × 10(4) S cm(-1) . The screen-printed AgNW patterns are used to fabricate a stretchable composite conductor, and a fully printed and intrinsically stretchable thin-film transistor array is also realized. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Implantable polymer/metal thin film structures for the localized treatment of cancer by Joule heating

NASA Astrophysics Data System (ADS)

Kan-Dapaah, Kwabena; Rahbar, Nima; Theriault, Christian; Soboyejo, Wole

2015-04-01

This paper presents an implantable polymer/metal alloy thin film structure for localized post-operative treatment of breast cancer. A combination of experiments and models is used to study the temperature changes due to Joule heating by patterned metallic thin films embedded in poly-dimethylsiloxane. The heat conduction within the device and the surrounding normal/cancerous breast tissue is modeled with three-dimensional finite element method (FEM). The FEM simulations are used to explore the potential effects of device geometry and Joule heating on the temperature distribution and lesion (thermal dose). The FEM model is validated using a gel model that mimics biological media. The predictions are also compared to prior results from in vitro studies and relevant in vivo studies in the literature. The implications of the results are discussed for the potential application of polymer/metal thin film structures in hyperthermic treatment of cancer.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, David B.

1991-01-01

Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Packaging material for thin film lithium batteries

DOEpatents

Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

1996-01-01

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Thin-film solar cell fabricated on a flexible metallic substrate

DOEpatents

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

DOEpatents

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tensile characteristics of metal nanoparticle films on flexible polymer substrates for printed electronics applications.

PubMed

Kim, Sanghyeok; Won, Sejeong; Sim, Gi-Dong; Park, Inkyu; Lee, Soon-Bok

2013-03-01

Metal nanoparticle solutions are widely used for the fabrication of printed electronic devices. The mechanical properties of the solution-processed metal nanoparticle thin films are very important for the robust and reliable operation of printed electronic devices. In this paper, we report the tensile characteristics of silver nanoparticle (Ag NP) thin films on flexible polymer substrates by observing the microstructures and measuring the electrical resistance under tensile strain. The effects of the annealing temperatures and periods of Ag NP thin films on their failure strains are explained with a microstructural investigation. The maximum failure strain for Ag NP thin film was 6.6% after initial sintering at 150 °C for 30 min. Thermal annealing at higher temperatures for longer periods resulted in a reduction of the maximum failure strain, presumably due to higher porosity and larger pore size. We also found that solution-processed Ag NP thin films have lower failure strains than those of electron beam evaporated Ag thin films due to their highly porous film morphologies.

MultiLayer solid electrolyte for lithium thin film batteries

DOEpatents

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, David K.

1992-01-01

Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Increased metal concentrations in exhaled breath condensate of industrial welders.

PubMed

Hoffmeyer, Frank; Weiss, Tobias; Lehnert, Martin; Pesch, Beate; Berresheim, Hans; Henry, Jana; Raulf-Heimsoth, Monika; Broding, Horst Christoph; Bünger, Jürgen; Harth, Volker; Brüning, Thomas

2011-01-01

It was the aim of this study to evaluate the effect of different devices on the metal concentration in exhaled breath condensate (EBC) and to prove whether working conditions in different welding companies result in diverse composition of metallic elements. The influence of two collection devices (ECoScreen, ECoScreen2) on detection of metallic elements in EBC was evaluated in 24 control subjects. Properties of ECoScreen and a frequent use can alter EBC metal content due to contamination from metallic components. ECoScreen2 turned out to be favourable for metal assessment. Concentrations of iron, nickel and chromium in EBC sampled with ECoScreen2 were compared between non-exposed controls and industrial welders. Metal concentrations in EBC were higher in 36 welders recruited from three companies. Exposure to welding fumes could be demonstrated predominantly for increased iron concentrations. Concentrations of iron and nickel differed by working conditions, but chromium could not be detected in EBC.

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

NASA Astrophysics Data System (ADS)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

Thin sheet casting with electromagnetic pressurization

DOEpatents

Walk, Steven R.; Slepian, R. Michael; Nathenson, Richard D.; Williams, Robert S.

1991-01-01

An apparatus, method and system for the casting of thin strips or strips of metal upon a moving chill block that includes an electromagnet located so that molten metal poured from a reservoir onto the chill block passes into the magnetic field produced by the electromagnet. The electromagnet produces a force on the molten metal on said chill block in the direction toward said chill block in order to enhance thermal contact between the molten metal and the chill block.

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Method and mold for casting thin metal objects

DOEpatents

Pehrson, Brandon P; Moore, Alan F

2014-04-29

Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

Method for casting thin metal objects

DOEpatents

Pehrson, Brandon P; Moore, Alan F

2015-04-14

Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

Calibrating ultrasonic test equipment for checking thin metal strip stock

NASA Technical Reports Server (NTRS)

Peterson, R. M.

1967-01-01

Calibration technique detects minute laminar-type discontinuities in thin metal strip stock. Patterns of plastic tape are preselected to include minutely calculated discontinuities and the tape is applied to the strip stock to intercept the incident sonic beam.

Contact-metal dependent current injection in pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, S. D.; Minari, T.; Miyadera, T.; Tsukagoshi, K.; Aoyagi, Y.

2007-11-01

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Vapor deposition of thin films

DOEpatents

Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

1992-01-01

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, Rointan; Nath, Prem

1982-01-01

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

Skyrmion based universal memory operated by electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zang, Jiadong; Chien, Chia-Ling; Li, Yufan

2017-09-26

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Fluidized Bed Sputtering for Particle and Powder Metallization

DTIC Science & Technology

2013-04-01

Introduction Small particles are often added to material systems to modify mechanical, dielectric, optical, or other properties . However, the particle...the poor mechanical properties of the wax degrade the bulk mechanical properties of the composite material . Thin metal coatings on the catalyst...to create precisely tailored optical properties . Alternating layers of ceramic and metal thin films can be designed to create optical filters that

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, D.K.

1992-12-15

Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation)

NASA Astrophysics Data System (ADS)

Rafique, Subrina; Han, Lu; Zhao, Hongping

2017-03-01

Deep-ultraviolet (DUV) photodetectors based on wide bandgap (WB) semiconductor materials have attracted strong interest because of their broad applications in military surveillance, fire detection and ozone hole monitoring. Monoclinic β-Ga2O3 with ultra-wide bandgap of 4.9 eV is a promising candidate for such application because of its high optical transparency in UV and visible wavelength region, and excellent thermal and chemical stability at elevated temperatures. Synthesis of high qualityβ-Ga2O3 thin films is still at its early stage and knowledge on the origins of defects in this material is lacking. The conventional epitaxy methods used to grow β-Ga2O3 thin films such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) still face great challenges such as limited growth rate and relatively high defects levels. In this work, we present the growth of β-Ga2O3 thin films on c-plane (0001) sapphire substrate by our recently developed low pressure chemical vapor deposition (LPCVD) method. The β-Ga2O3 thin films synthesized using high purity metallic gallium and oxygen as the source precursors and argon as carrier gas show controllable N-type doping and high carrier mobility. Metal-semiconductor-metal (MSM) photodetectors (PDs) were fabricated on the as-grown β-Ga2O3 thin films. Au/Ti thin films deposited by e-beam evaporation served as the contact metals. Optimization of the thin film growth conditions and the effects of thermal annealing on the performance of the PDs were investigated. The responsivity of devices under 250 nm UV light irradiation as well as dark light will be characterized and compared.

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls.

PubMed

Barrios, Carlos Angulo; Canalejas-Tejero, Víctor

2017-01-01

We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

2001-08-01

The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. {copyright} 2001 Optical Society of America

Method and apparatus for determining weldability of thin sheet metal

DOEpatents

Goodwin, Gene M.; Hudson, Joseph D.

1988-01-01

A fixture is provided for testing thin sheet metal specimens to evaluate hot-cracking sensitivity for determining metal weldability on a heat-to-heat basis or through varying welding parameters. A test specimen is stressed in a first direction with a load selectively adjustable over a wide range and then a weldment is passed along over the specimen in a direction transverse to the direction of strain to evaluate the hot-cracking characteristics of the sheet metal which are indicative of the weldability of the metal. The fixture provides evaluations of hot-cracking sensitivity for determining metal weldability in a highly reproducible manner with minimum human error.

Surface Modification of Self-Assembled Graphene Oxide for Cell Culture Studies

NASA Astrophysics Data System (ADS)

Swain, John E., III

Thin films show great promise for biological applications, from in situ monitoring to pharmaceutical testing. In this study, a graphene oxide (GO) thin film is prepared with the aim to further functionalize the film for pharmaceutical toxicity screening applications. GO was selected due to its capability to be reduced into an optically transparent and electrically conductive thin film. In addition, GO is derived from carbon, a widely abundant element, in contrast to many other thin films that rely on resource-limited precious metals. Special care was taken to select GO and GO film synthesis methods that minimize the amount of organic-based solvents, maintain reactions at atmospheric pressure and moderate temperatures, and are scalable for manufacturing. Chemical oxidation of graphite flakes was carried out via a modified Hummer's Method with a pre-oxidation step. The resulting GO flakes were self-assembled using commercially available 4-sulfocalix[4]arene. Analytical characterizations (e.g., elemental analysis, XRD, FTIR, Raman, SEM, AFM) were performed to evaluate the success of graphite oxidation and formation of the self-assembled thin film. In order to gain a better understanding of the interactions between GO and sulfocalix (SCX), equilibrium conformations of the SCX molecule and truncated GO were calculated using Spartan'16 Parallels. This study demonstrates that the interaction between the GO and the SCX molecule to create a self-assembled thin film is the result of pi-pi stacking, as hypothesized by Sundramoorthy et al. (2015). The self-assembled GO film was successfully deposited on a polyethylene terephthalate (PET) substrate and functionalized with 3-aminopropyl triethoxysilane (APTES), which renders the film capable of further functionalization with proteins for yielding a three-dimensional cell culture or co-culture platform for different applications.

Low pressure hand made PVD system for high crystalline metal thin film preparation in micro-nanometer scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Marimpul, Rinaldo

High crystalline metal thin film preparation in application both for catalyst substrate or electrode in any electronic devices always to be considered in material functional material research and development. As a substrate catalyst, this metal take a role as guidance for material growth in order to resulted in proper surface structure although at the end it will be removed via etching process. Meanwhile as electrodes, it will dragging charges to be collected inside. This brief discussion will elaborate general fundamental principle of physical vapor deposition (PVD) system for metal thin film preparation in micro-nanometer scale. The influence of thermodynamic parametersmore » and metal characteristic such as melting point and particle size will be elucidated. Physical description of deposition process in the chamber can be simplified by schematic evaporation phenomena which is supported by experimental measurement such as SEM and XRD.« less

Modeling and experimental investigation of x-ray spectra from a liquid metal anode x-ray tube

NASA Astrophysics Data System (ADS)

David, Bernd R.; Thran, Axel; Eckart, Rainer

2004-11-01

This paper presents simulated and measured spectra of a novel type of x-ray tube. The bremsstrahlung generating principle of this tube is based on the interaction of high energetic electrons with a turbulently flowing liquid metal separated from the vacuum by a thin window. We simulated the interaction of 50-150 keV electrons with liquid metal targets composed of the elements Ga, In, Sn, as well as the solid elements C, W and Re used for the electron windows. We obtained x-ray spectra and energy loss curves for various liquid metal/window combinations and thicknesses of the window material. In terms of optimum heat transport a thin diamond window in combination with the liquid metal GaInSn is the best suited system. If photon flux is the optimization criteria, thin tungsten/rhenium windows cooled by GaInSn should be preferred.

Multi-Material Front Contact for 19% Thin Film Solar Cells.

PubMed

van Deelen, Joop; Tezsevin, Yasemin; Barink, Marco

2016-02-06

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

NASA Astrophysics Data System (ADS)

Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

2014-03-01

LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

Thin metal bilayer for surface plasmon resonance sensors in a multimode plastic optical fiber: the case of palladium and gold metal films

NASA Astrophysics Data System (ADS)

Cennamo, Nunzio; Zuppella, Paola; Bacco, Davide; Corso, Alain J.; Pelizzo, Maria G.; Pesavento, Maria; Zeni, Luigi

2016-05-01

A novel sensing platform based on thin metal bilayer for surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) has been designed, implemented and tested. The experimental results are congruent with the numerical studies. This platform has been properly optimized to work in the 1.38 -1.42 refractive index range and it exhibits excellent sensitivity. This refractive index range is very interesting for bio-chemical applications, where the polymer layer are used as receptors (e.g. molecularly imprinted polymer) or to immobilize the bio-receptor on the metal surface. The proposed metallic bilayer is based on palladium and gold films and replaces the traditional gold by exhibiting higher performances. Furthermore, the deposition of the thin bilayer is a single process and no further manufacturing step is required. In fact, in this case the photoresist buffer layer between the POF core and the metal layer, usually required to increase the refractive index range, is no longer necessary.

Spinomotive force induced by a transverse displacement current in a thin metal or doped-semiconductor sheet: Classical and quantum views.

NASA Astrophysics Data System (ADS)

Hu, Chia-Ren

2004-03-01

We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

Investigation of ITO free transparent conducting polymer based electrode

NASA Astrophysics Data System (ADS)

Sharma, Vikas; Sapna, Sachdev, Kanupriya

2016-05-01

The last few decades have seen a significant improvement in organic semiconductor technology related to solar cell, light emitting diode and display panels. The material and structure of the transparent electrode is one of the major concerns for superior performance of devices such as OPV, OLED, touch screen and LCD display. Commonly used ITO is now restricted due to scarcity of indium, its poor mechanical properties and rigidity, and mismatch of energy levels with the active layer. Nowadays DMD (dielectric-metal-dielectric) structure is one of the prominent candidates as alternatives to ITO based electrode. We have used solution based spin coated polymer layer as the dielectric layer with silver thin film embedded in between to make a polymer-metal-polymer (PMP) structure for TCE applications. The PMP structure shows low resistivity (2.3 x 10-4Ω-cm), high carrier concentration (2.9 x 1021 cm-3) and moderate transparency. The multilayer PMP structure is characterized with XRD, AFM and Hall measurement to prove its suitability for opto-electronic device applications.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

PubMed

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Resistive switching based on filaments in metal/PMMA/metal thin film devices

NASA Astrophysics Data System (ADS)

Wolf, Christoph; Nau, Sebastian; Sax, Stefan; Busby, Yan; Pireaux, Jean-Jacques; List-Kratochvil, Emil J. W.

2015-12-01

The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses

PubMed Central

Schnabel, Volker; Jaya, B. Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M.

2016-01-01

A paramount challenge in materials science is to design damage-tolerant glasses. Poisson’s ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson’s ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses. PMID:27819318

Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses.

PubMed

Schnabel, Volker; Jaya, B Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M

2016-11-07

A paramount challenge in materials science is to design damage-tolerant glasses. Poisson's ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson's ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses.

Surface-supported metal-organic framework thin films: fabrication methods, applications, and challenges.

PubMed

Liu, Jinxuan; Wöll, Christof

2017-10-02

Surface-supported metal-organic framework thin films are receiving increasing attention as a novel form of nanotechnology. New deposition techniques that enable the control of the film thickness, homogeneity, morphology, and dimensions with a huge number of metal-organic framework compounds offer tremendous opportunities in a number of different application fields. In response to increasing demands for environmental sustainability and cleaner energy, much effort in recent years has been devoted to the development of MOF thin films for applications in photovoltaics, CO 2 reduction, energy storage, water splitting, and electronic devices, as well as for the fabrication of membranes. Although existing applications are promising and encouraging, MOF thin films still face numerous challenges, including the need for a more thorough understanding of the thin-film growth mechanism, stability of the internal and external interfaces, strategies for doping and models for charge carrier transport. In this paper, we review the recent advances in MOF thin films, including fabrication and patterning strategies and existing nanotechnology applications. We conclude by listing the most attractive future opportunities as well as the most urgent challenges.

Glancing angle deposition of sculptured thin metal films at room temperature

NASA Astrophysics Data System (ADS)

Liedtke, S.; Grüner, Ch; Lotnyk, A.; Rauschenbach, B.

2017-09-01

Metallic thin films consisting of separated nanostructures are fabricated by evaporative glancing angle deposition at room temperature. The columnar microstructure of the Ti and Cr columns is investigated by high resolution transmission electron microscopy and selective area electron diffraction. The morphology of the sculptured metallic films is studied by scanning electron microscopy. It is found that tilted Ti and Cr columns grow with a single crystalline morphology, while upright Cr columns are polycrystalline. Further, the influence of continuous substrate rotation on the shaping of Al, Ti, Cr and Mo nanostructures is studied with view to surface diffusion and the shadowing effect. It is observed that sculptured metallic thin films deposited without substrate rotation grow faster compared to those grown with continuous substrate rotation. A theoretical model is provided to describe this effect.

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, R.; Nath, P.

1982-06-22

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment. 1 fig.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

NASA Astrophysics Data System (ADS)

Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

Screening Methods for Metal-Containing Nanoparticles in Water

EPA Science Inventory

Screening-level analysis of water for metal-containing nanoparticles is achieved with single particle-inductively coupled plasma mass spectrometry (SP-ICPMS). This method measures both the concentration of nanoparticles containing an analyte metal and the mass of the metal in eac...

Tantalum-based thin film coatings for wear resistant arthroprostheses.

PubMed

Balagna, C; Faga, M G; Spriano, S

2011-10-01

Cobalt-chromium-molybdenum alloys with high carbon content (HC-CoCrMo) are widely used as materials for arthroprosthesis, in particular in metal-on-metal (MoM) hip joints. In spite of their good wear and corrosion resistance, production of metallic wear particles and metal ion release will occur on a large time-scale. An enhancement of the metal ion level in the patient's blood and urine is often reported in clinical data. Hypersensitivity, inflammatory response and cell necrosis can occur as consequence. So implants on young patients and women on childbearing age are not so widespread. The aim of this research is the realization of a thin film coating in order to improve the biocompatibility of Co-based alloys and to reduce debris production, ion release and citotoxicity. The innovative process consists of a thermal treatment in molten salts, in order to obtain a tantalum enriched thin film coating. Tantalum is chosen because it is considered a biocompatible metal with high corrosion resistance and low ion release. Three HC-CoCrMo alloys, produced by different manufacturing processes, are tested as substrates. The coating is a thin film of TaC or it can be composed by a multilayer of two tantalum carbides and metallic tantalum, depending on the temperature of the treatment and on the carbon content of the substrate. The thin films as well the substrates are characterized from the structural, chemical and morphological point of view. Moreover mechanical behaviour of treated and untreated materials is analyzed by means of nanohardness, scratch and ball-on-disc wear tests. The coating increases the mechanical and tribological properties of HC-CoCrMo.

Damage in a Thin Metal Film by High-Power Terahertz Radiation.

PubMed

Agranat, M B; Chefonov, O V; Ovchinnikov, A V; Ashitkov, S I; Fortov, V E; Kondratenko, P S

2018-02-23

We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao

With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. Themore » wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.« less

Damage in a Thin Metal Film by High-Power Terahertz Radiation

NASA Astrophysics Data System (ADS)

Agranat, M. B.; Chefonov, O. V.; Ovchinnikov, A. V.; Ashitkov, S. I.; Fortov, V. E.; Kondratenko, P. S.

2018-02-01

We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

Step-by-step fabrication of a highly oriented crystalline three-dimensional pillared-layer-type metal-organic framework thin film confirmed by synchrotron X-ray diffraction.

PubMed

Otsubo, Kazuya; Haraguchi, Tomoyuki; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2012-06-13

Fabrication of a crystalline ordered thin film based on the porous metal-organic frameworks (MOFs) is one of the practical applications of the future functional nanomaterials. Here, we report the creation of a highly oriented three-dimensional (3-D) porous pillared-layer-type MOF thin film on a metal substrate using a step-by-step approach based on liquid-phase epitaxy. Synchrotron X-ray diffraction (XRD) study clearly indicates that the thin film is crystalline and its orientation is highly controlled in both horizontal and vertical directions relative to the substrate. This report provides the first confirmation of details of not only the crystallinity but also the orientation of 3-D MOF thin film using synchrotron XRD. Moreover, we also demonstrate its guest adsorption/desorption behavior by using in situ XRD measurements. The results presented here would promise useful insights for fabrication of MOF-based nanodevices in the future.

Electric Transport Phenomena of Nanocomposite Organic Polymer Thin Films

NASA Astrophysics Data System (ADS)

Jira, Nicholas C.; Sabirianov, Ildar; Ilie, Carolina C.

We discuss herein the nanocomposite organic thin film diodes for the use of plasmonic solar cells. This experimental work follows the theoretical calculations done for plasmonic solar cells using the MNPBEM toolbox for MatLab. These calculations include dispersion curves and amount of light scattering cross sections for different metallic nanoparticles. This study gives us clear ideas on what to expect from different metals, allowing us to make the best choice on what to use to obtain the best results. One specific technique for light trapping in thin films solar cells utilizes metal nanoparticles on the surface of the semiconductor. The characteristics of the metal, semiconductor interface allows for light to be guided in between them causing it to be scattered, allowing for more chances of absorption. The samples were fabricated using organic thin films made from polymers and metallic nanoparticles, more specifically Poly(1-vinylpyrrolidone-co-2-dimethylaminoethyl methacrylate) copolymer and silver or gold nanoparticles. The two fabrication methods applied include spin coating and Langmuir-Blodgett technique. The transport properties are obtained by analyzing the I-V curves. We will also discuss the resistance, resistivity, conductance, density of charge carriers. SUNY Oswego SCAC Grant.

Generation of low work function, stable compound thin films by laser ablation

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2001-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

DOEpatents

Tracy, C.E.; Benson, D.K.; Ruth, M.R.

1985-08-16

A method of synthesizing a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

Nanoscale Insight and Control of Structural and Electronic Properties of Organic Semiconductor / Metal Interfaces

NASA Astrophysics Data System (ADS)

Maughan, Bret

Organic semiconductor interfaces are promising materials for use in next-generation electronic and optoelectronic devices. Current models for metal-organic interfacial electronic structure and dynamics are inadequate for strongly hybridized systems. This work aims to address this issue by identifying the factors most important for understanding chemisorbed interfaces with an eye towards tuning the interfacial properties. Here, I present the results of my research on chemisorbed interfaces formed between thin-films of phthalocyanine molecules grown on monocrystalline Cu(110). Using atomically-resolved nanoscale imaging in combination with surface-sensitive photoemission techniques, I show that single-molecule level interactions control the structural and electronic properties of the interface. I then demonstrate that surface modifications aimed at controlling interfacial interactions are an effective way to tailor the physical and electronic structure of the interface. This dissertation details a systematic investigation of the effect of molecular and surface functionalization on interfacial interactions. To understand the role of molecular structure, two types of phthalocyanine (Pc) molecules are studied: non-planar, dipolar molecules (TiOPc), and planar, non-polar molecules (H2Pc and CuPc). Multiple adsorption configurations for TiOPc lead to configuration-dependent self-assembly, Kondo screening, and electronic energy-level alignment. To understand the role of surface structure, the Cu(110) surface is textured and passivated by oxygen chemisorption prior to molecular deposition, which gives control over thin-film growth and interfacial electronic structure in H2Pc and CuPc films. Overall, the work presented here demonstrates a method for understanding interfacial electronic structure of strongly hybridized interfaces, an important first step towards developing more robust models for metal-organic interfaces, and reliable, predictive tuning of interfacial properties.

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Development of Cu Clad Cu-Zr Based Metallic Glass and Its Solderability

NASA Astrophysics Data System (ADS)

Terajima, Takeshi; Kimura, Hisamichi; Inoue, Akihisa

Soldering is a candidate technique for joining metallic glasses. It can be processed far below the crystallization temperatures of the various metallic glasses so that there is no possibility of crystallization. However, wettability of Cu-Zr based metallic glass by Pb free solder is poor because a strong surface oxide film interferes direct contact between them. To overcome the problem, Cu thin film clad metallic glass was developed. It was preliminary produced by casting a melt of Cu36Zr48Al8Ag8 pre-alloy into Cu mold cavity, inside which Cu thin film with 2 mm in thickness was set on the wall. Cu36Zr48Al8Ag8 metallic glass, whose surface Cu thin film was welded to, was successfully produced. From the microstructure analyses, it was found that reaction layer was formed at the interface between Cu and Cu36Zr48Al8Ag8 metallic glass, however, there was no oxide in the Cu clad layer. Solderability to the metallic glass was drastically increased. The Cu clad layer played an important role to prevent the formation of surface oxide film and consequently improved the solderability.

Deposition and thermal characterization of nano-structured aluminum nitride thin film on Cu-W substrate for high power light emitting diode package.

PubMed

Cho, Hyun Min; Kim, Min-Sun

2014-08-01

In this study, we developed AlN thick film on metal substrate for hybrid type LED package such as chip on board (COB) using metal printed circuit board (PCB). Conventional metal PCB uses ceramic-polymer composite as electrical insulating layer. Thermal conductivities of such type dielectric film are typically in the range of 1~4 W/m · K depending on the ceramic filler. Also, Al or Cu alloy are mainly used for metal base for high thermal conduction to dissipate heat from thermal source mounted on metal PCB. Here we used Cu-W alloy with low thermal expansion coefficient as metal substrate to reduce thermal stress between insulating layer and base metal. AlN with polyimide (PI) powder were used as starting materials for deposition. We could obtain very high thermal conductivity of 28.3 W/m · K from deposited AlN-PI thin film by AlN-3 wt% PI powder. We made hybrid type high power LED package using AlN-PI thin film. We tested thermal performance of this film by thermal transient measurement and compared with conventional metal PCB substrate.

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

NASA Astrophysics Data System (ADS)

Badalyan, A. M.; Bakhturova, L. F.; Kaichev, V. V.; Polyakov, O. V.; Pchelyakov, O. P.; Smirnov, G. I.

2011-09-01

A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu0) and has the form of closely packed nanograins with a characteristic structure.

Molecular precursor routes to transition metal sulfides

NASA Astrophysics Data System (ADS)

Dinnage, Christopher Walker

This thesis is primarily concerned with the synthesis of homoleptic early transition meta thiolates and the subsequent preparation of bulk and thin-film metal disulfides from these compounds. Chapter 1 gives an introduction into the properties, preparation procedures and uses of bulk and thin-film transition metal disulfides as well as giving an overview of early transition metal thiolates synthesied so far in the literature (for titanium, zirconium, tantalum and niobium). Chapter 2 is concerned with the synthesis of a number of ionic and neutral transition metal thiolates. The main synthetic methodologies discussed in this chapter include substitution reactions of transition metal amides and alkyls with thiols, salt metathesis reactions of transition metal chlorides with alkali metal thiolates or with a base / thiol and the use of Grignard reagents. Chapter 3 discusses the preparation of bulk transition metal disulfides using the thiolates prepared in the previous chapter via a thio "sol-gel" route. The preparation of a range of bulk metal and mixed-metal disulfides using transition metal chlorides and hexamethyldisilathiane is also discussed in this chapter. Finally, chapter 4 is concerned with the attempted preparation of thin-films of some transition metal disulfides. Decomposition studies of some of the thiolates prepared in chapter 2 are discussed using thermal gravimetric analysis. Vapour-phase deposition studies are also explored in order to test the potential of the transition metal thiolates as precursors to the disulfides. Experiments using low-pressure chemical vapour deposition and aerosol-assisted chemical vapour deposition are also described.

The Gaia-ESO Survey: Separating disk chemical substructures with cluster models. Evidence of a separate evolution in the metal-poor thin disk

NASA Astrophysics Data System (ADS)

Rojas-Arriagada, A.; Recio-Blanco, A.; de Laverny, P.; Schultheis, M.; Guiglion, G.; Mikolaitis, Š.; Kordopatis, G.; Hill, V.; Gilmore, G.; Randich, S.; Alfaro, E. J.; Bensby, T.; Koposov, S. E.; Costado, M. T.; Franciosini, E.; Hourihane, A.; Jofré, P.; Lardo, C.; Lewis, J.; Lind, K.; Magrini, L.; Monaco, L.; Morbidelli, L.; Sacco, G. G.; Worley, C. C.; Zaggia, S.; Chiappini, C.

2016-02-01

Context. Recent spectroscopic surveys have begun to explore the Galactic disk system on the basis of large data samples, with spatial distributions sampling regions well outside the solar neighborhood. In this way, they provide valuable information for testing spatial and temporal variations of disk structure kinematics and chemical evolution. Aims: The main purposes of this study are to demonstrate the usefulness of a rigorous mathematical approach to separate substructures of a stellar sample in the abundance-metallicity plane, and provide new evidence with which to characterize the nature of the metal-poor end of the thin disk sequence. Methods: We used a Gaussian mixture model algorithm to separate in the [Mg/Fe] vs. [Fe/H] plane a clean disk star subsample (essentially at RGC< 10 kpc) from the Gaia-ESO survey (GES) internal data release 2 (iDR2). We aim at decomposing it into data groups highlighting number density and/or slope variations in the abundance-metallicity plane. An independent sample of disk red clump stars from the Apache Point Observatory Galactic Evolution Experiment (APOGEE) was used to cross-check the identified features. Results: We find that the sample is separated into five groups associated with major Galactic components; the metal-rich end of the halo, the thick disk, and three subgroups for the thin disk sequence. This is confirmed with the sample of red clump stars from APOGEE. The three thin disk groups served to explore this sequence in more detail. The two metal-intermediate and metal-rich groups of the thin disk decomposition ([Fe/H] > -0.25 dex) highlight a change in the slope at solar metallicity. This holds true at different radial regions of the Milky Way. The distribution of Galactocentric radial distances of the metal-poor part of the thin disk ([Fe/H] < -0.25 dex) is shifted to larger distances than those of the more metal-rich parts. Moreover, the metal-poor part of the thin disk presents indications of a scale height intermediate between those of the thick and the rest of the thin disk, and it displays higher azimuthal velocities than the latter. These stars might have formed and evolved in parallel and/or dissociated from the inside-out formation taking place in the internal thin disk. Their enhancement levels might be due to their origin from gas pre-enriched by outflows from the thick disk or the inner halo. The smooth trends of their properties (their spatial distribution with respect to the plane, in particular) with [Fe/H] and [Mg/Fe] suggested by the data indicates a quiet dynamical evolution, with no relevant merger events. Based on data products from observations made with ESO Telescopes at the La Silla Paranal Observatory under programme ID 188.B-3002. These data products have been processed by the Cambridge Astronomy Survey Unit (CASU) at the Institute of Astronomy, University of Cambridge, and by the FLAMES/UVES reduction team at INAF/Osservatorio Astrofisico di Arcetri. These data have been obtained from the Gaia-ESO Survey Data Archive, prepared and hosted by the Wide Field Astronomy Unit, Institute for Astronomy, University of Edinburgh, which is funded by the UK Science and Technology Facilities Council.

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Deng, Guochu; He, Zhangbin; Muralt, Paul

2009-04-01

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

PubMed

Rathi, Servin; Lee, In-yeal; Park, Jin-Hyung; Kim, Bong-Jun; Kim, Hyun-Tak; Kim, Gil-Ho

2014-11-26

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

Reducing adhesion energy of micro-relay electrodes by ion beam synthesized oxide nanolayers

DOE PAGES

Saha, Bivas; Peschot, Alexis; Osoba, Benjamin; ...

2017-03-09

Reduction in the adhesion energy of contacting metal electrode surfaces in nano-electro-mechanical switches is crucial for operation with low hysteresis voltage. We demonstrate that by forming thin layers of metal-oxides on metals such as Ru and W, the adhesion energy can be reduced by up to a factor of ten. We employ a low-energy ion-beam synthesis technique and subsequent thermal annealing to form very thin layers (~2 nm) of metal-oxides (such as RuO 2 and WO x) on Ru and W metal surfaces and quantify the adhesion energy using an atomic force microscope with microspherical tips.

A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors

DOE PAGES

Liang, Jiajie; Tong, Kwing; Pei, Qibing

2016-05-09

Silver nanowire is a very promising material for fabricating compliant conductors which are essential for stretchable/wearable electronic devices. Screen printing is a cost-effective and scalable technology to fabricate large-area thin film coatings with modest pattern resolution. The biggest challenge to prepare a screen printable silver nanowire ink stems from the low viscosity of silver nanowire dispersions and that the addition of a thickening agent could dramatically increase the inter-nanowire contact resistance in the resulting coating. Herein, we report the synthesis of a water-based silver nanowire ink, which was formulated with low solid contents, high viscosity at 0.1 s -1 shearmore » rate, and appropriate rheological behavior suitable for screen printing. Silver nanowire coating patterns were screen printed with uniform sharp edges, ~50 μm resolution, and electrical conductivity as high as 4.67 × 10 4 S cm -1. The screen printed silver nanowires were then used to fabricate a composite conductor that retained a conductivity greater than 10,000 S cm -1 under 70% tensile strain. Fully printed and stretchable/wearable thin-film transistor arrays were also fabricated by employing the screen printed composite conductor as the source, drain, and gate, drop cast semiconducting carbon nanotubes as the channel, and a dielectric elastomer. The 10 × 6 thin-film transistor arrays had a fabrication yield of 91.7%, average mobility of 33.8 ± 3.7 cm 2V -1s -1, ON/OFF ratio ~1000, and remained stable during 1,000 cycles of wearing on and peeling off a glass tube with 5 mm diameter.« less

A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Jiajie; Tong, Kwing; Pei, Qibing

Silver nanowire is a very promising material for fabricating compliant conductors which are essential for stretchable/wearable electronic devices. Screen printing is a cost-effective and scalable technology to fabricate large-area thin film coatings with modest pattern resolution. The biggest challenge to prepare a screen printable silver nanowire ink stems from the low viscosity of silver nanowire dispersions and that the addition of a thickening agent could dramatically increase the inter-nanowire contact resistance in the resulting coating. Herein, we report the synthesis of a water-based silver nanowire ink, which was formulated with low solid contents, high viscosity at 0.1 s -1 shearmore » rate, and appropriate rheological behavior suitable for screen printing. Silver nanowire coating patterns were screen printed with uniform sharp edges, ~50 μm resolution, and electrical conductivity as high as 4.67 × 10 4 S cm -1. The screen printed silver nanowires were then used to fabricate a composite conductor that retained a conductivity greater than 10,000 S cm -1 under 70% tensile strain. Fully printed and stretchable/wearable thin-film transistor arrays were also fabricated by employing the screen printed composite conductor as the source, drain, and gate, drop cast semiconducting carbon nanotubes as the channel, and a dielectric elastomer. The 10 × 6 thin-film transistor arrays had a fabrication yield of 91.7%, average mobility of 33.8 ± 3.7 cm 2V -1s -1, ON/OFF ratio ~1000, and remained stable during 1,000 cycles of wearing on and peeling off a glass tube with 5 mm diameter.« less

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

2016-08-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

Chemical activation of molecules by metals: Experimental studies of electron distributions and bonding

NASA Astrophysics Data System (ADS)

Lichtenberg, Dennis L.

During this period some important breakthroughs were accomplished in understanding the relationships between molecular ionization energies and bond energies in transition metal complexes, in understanding the electronic factors of carbon-hydrogen bond activation by transition metals, in characterizing small molecule bonding interactions with transition metals, and in investigating intermolecular interactions in thin films of transition metal complexes. The formal relationship between measured molecular ionization energies and thermodynamic bond dissociation energies was developed into a single equation which unifies the treatment of covalent bonds, ionic bonds, and partially ionic bonds. The relationship was used to clarify the fundamental thermodynamic information relating to metal-hydrogen, metal-alkyl, and metal-metal bond energies. The ionization energies were also used to correlate the rates of carbonyl substitution reactions of (eta(sup 5)-C5H4X)Rh(CO)2 complexes, and to reveal the factors that control the stability of the transition state. The investigations of the fundamental interactions of C-H sigma and sigma* orbitals metals were continued with study of eta(sup 3)-1-methylallyl metal complexes. Direct observation and measurement of the stabilization energy provided by the agostic interaction of the C-H bond with the metal was obtained. The ability to observe the electronic effects of intermolecular interactions by comparing the ionizations of metal complexes in the gas phase with the ionizations of thin solid organometallic films prepared in ultra-high vacuum was established. Most significantly, the scanning tunneling microscope imaging of these thin films was accomplished.

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Fabrication of gold dot, ring, and corpuscle arrays from block copolymer templates via a simple modification of surface energy

NASA Astrophysics Data System (ADS)

Cho, Heesook; Choi, Sinho; Kim, Jin Young; Park, Soojin

2011-12-01

We demonstrate a simple method for tuning the morphologies of as-spun micellar thin films by modifying the surface energy of silicon substrates. When a polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) copolymer dissolved in o-xylene was spin-coated onto a PS-modified surface, a dimple-type structure consisting of a thick PS shell and P2VP core was obtained. Subsequently, when the films were immersed in metal precursor solutions at certain periods of time and followed by plasma treatment, metal individual dots in a ring-shaped structure, metal nanoring, and metal corpuscle arrays were fabricated, depending on the loading amount of metal precursors. In contrast, when PS-b-P2VP films cast onto silicon substrates with a native oxide were used as templates, only metal dotted arrays were obtained. The combination of micellar thin film and surface energy modification offers an effective way to fabricate various nanostructured metal or metal oxide films.We demonstrate a simple method for tuning the morphologies of as-spun micellar thin films by modifying the surface energy of silicon substrates. When a polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) copolymer dissolved in o-xylene was spin-coated onto a PS-modified surface, a dimple-type structure consisting of a thick PS shell and P2VP core was obtained. Subsequently, when the films were immersed in metal precursor solutions at certain periods of time and followed by plasma treatment, metal individual dots in a ring-shaped structure, metal nanoring, and metal corpuscle arrays were fabricated, depending on the loading amount of metal precursors. In contrast, when PS-b-P2VP films cast onto silicon substrates with a native oxide were used as templates, only metal dotted arrays were obtained. The combination of micellar thin film and surface energy modification offers an effective way to fabricate various nanostructured metal or metal oxide films. Electronic supplementary information (ESI) available: AFM images of Au nanorings prepared from a mixed solvent and characterization of PS-b-P2VP micellar films. See DOI: 10.1039/c1nr11075f

Thin films of mixed metal compounds

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1985-06-11

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Electromagnetic augmentation for casting of thin metal sheets

DOEpatents

Hull, J.R.

1987-10-28

Thin metal sheets are cast by magnetically levitating molten metal deposited in a model within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled by the water-cooled walls of the mold to form a solid metal sheet. A conducting shield is electrically coupled to the molten metal sheet to provide a return path for eddy currents induced in the metal sheet by the current in the AC conducting coils. In another embodiment, a DC conducting coil is coupled to the metal sheet for providing a direct current therein which interacts with the magnetic field to levitate the moving metal sheet. Levitation of the metal sheet in both molten and solid forms reduces its contact pressure with the mold walls while maintaining sufficient engagement therebetween to permit efficient conductive cooling by the mold through which a coolant fluid may be circulated. 8 figs.

Comparison of the agglomeration behavior of thin metallic films on SiO2

NASA Astrophysics Data System (ADS)

Gadkari, P. R.; Warren, A. P.; Todi, R. M.; Petrova, R. V.; Coffey, K. R.

2005-07-01

The stability of continuous metallic thin films on insulating oxide surfaces is of interest to applications such as semiconductor interconnections and gate engineering. In this work, we report the study of the formation of voids and agglomeration of initially continuous Cu, Au, Ru and Pt thin films deposited on amorphous thermally grown SiO2 surfaces. Polycrystalline thin films having thicknesses in the range of 10-100 nm were ultrahigh vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150-800 °C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all of the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play an important part in deciding the mode of void growth in Au and Pt thin films. Last, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, D.B.

1988-06-06

Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

DOEpatents

Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

1987-01-01

A method of synthesizing electro-optically active reaction products from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

Coating of porous carbon for use in lithium air batteries

DOEpatents

Amine, Khalil; Lu, Jun; Du, Peng; Lei, Yu; Elam, Jeffrey W

2015-04-14

A cathode includes a carbon material having a surface, the surface having a first thin layer of an inert material and a first catalyst overlaying the first thin layer, the first catalyst including metal or metal oxide nanoparticles, wherein the cathode is configured for use as the cathode of a lithium-air battery.

Solid-state lithium battery

DOEpatents

Ihlefeld, Jon; Clem, Paul G; Edney, Cynthia; Ingersoll, David; Nagasubramanian, Ganesan; Fenton, Kyle Ross

2014-11-04

The present invention is directed to a higher power, thin film lithium-ion electrolyte on a metallic substrate, enabling mass-produced solid-state lithium batteries. High-temperature thermodynamic equilibrium processing enables co-firing of oxides and base metals, providing a means to integrate the crystalline, lithium-stable, fast lithium-ion conductor lanthanum lithium tantalate (La.sub.1/3-xLi.sub.3xTaO.sub.3) directly with a thin metal foil current collector appropriate for a lithium-free solid-state battery.

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Wafer-scale growth of VO2 thin films using a combinatorial approach

PubMed Central

Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu; Zheng, Yuan-Xia; Haislmaier, Ryan C.; Alem, Nasim; Engel-Herbert, Roman

2015-01-01

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems. PMID:26450653

Changes in chemical and optical properties of thin film metal mirrors on LDEF

NASA Technical Reports Server (NTRS)

Peters, Palmer N.; Zwiener, James M.; Gregory, John C.; Raikar, Ganesh N.; Christl, Ligia C.; Wilkes, Donald R.

1995-01-01

Thin films of the metals Cu, Ni, Pt, Au, Sn, Mo, and W deposited on fused silica flats were exposed at ambient temperature on the leading and trailing faces of the LDEF. Reflectances of these films were measured from 250 to 2500 nm and compared with controls. The exposed films were subjected to the LDEF external environment including atomic oxygen, molecular contamination, and solar ultraviolet. Major changes in optical and infrared reflectance were seen for Cu, Mo, Ni, and W films on the leading face of LDEF and are attributed to partial conversion of metal to metal oxide. Smaller changes in optical properties are seen on all films and are probably caused by thin contaminant films deposited on top of the metal. The optical measurements are correlated with film thickness measurements, x-ray photoelectron spectroscopy, optical calculations, and, in the case of Cu, with x-ray diffraction measurements. In a few cases, comparisons with results from a similar UAH experiment on STS-8 have been drawn.

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Localized thin-section CT with radiomics feature extraction and machine learning to classify early-detected pulmonary nodules from lung cancer screening

NASA Astrophysics Data System (ADS)

Tu, Shu-Ju; Wang, Chih-Wei; Pan, Kuang-Tse; Wu, Yi-Cheng; Wu, Chen-Te

2018-03-01

Lung cancer screening aims to detect small pulmonary nodules and decrease the mortality rate of those affected. However, studies from large-scale clinical trials of lung cancer screening have shown that the false-positive rate is high and positive predictive value is low. To address these problems, a technical approach is greatly needed for accurate malignancy differentiation among these early-detected nodules. We studied the clinical feasibility of an additional protocol of localized thin-section CT for further assessment on recalled patients from lung cancer screening tests. Our approach of localized thin-section CT was integrated with radiomics features extraction and machine learning classification which was supervised by pathological diagnosis. Localized thin-section CT images of 122 nodules were retrospectively reviewed and 374 radiomics features were extracted. In this study, 48 nodules were benign and 74 malignant. There were nine patients with multiple nodules and four with synchronous multiple malignant nodules. Different machine learning classifiers with a stratified ten-fold cross-validation were used and repeated 100 times to evaluate classification accuracy. Of the image features extracted from the thin-section CT images, 238 (64%) were useful in differentiating between benign and malignant nodules. These useful features include CT density (p  =  0.002 518), sigma (p  =  0.002 781), uniformity (p  =  0.032 41), and entropy (p  =  0.006 685). The highest classification accuracy was 79% by the logistic classifier. The performance metrics of this logistic classification model was 0.80 for the positive predictive value, 0.36 for the false-positive rate, and 0.80 for the area under the receiver operating characteristic curve. Our approach of direct risk classification supervised by the pathological diagnosis with localized thin-section CT and radiomics feature extraction may support clinical physicians in determining truly malignant nodules and therefore reduce problems in lung cancer screening.

Localized thin-section CT with radiomics feature extraction and machine learning to classify early-detected pulmonary nodules from lung cancer screening.

PubMed

Tu, Shu-Ju; Wang, Chih-Wei; Pan, Kuang-Tse; Wu, Yi-Cheng; Wu, Chen-Te

2018-03-14

Lung cancer screening aims to detect small pulmonary nodules and decrease the mortality rate of those affected. However, studies from large-scale clinical trials of lung cancer screening have shown that the false-positive rate is high and positive predictive value is low. To address these problems, a technical approach is greatly needed for accurate malignancy differentiation among these early-detected nodules. We studied the clinical feasibility of an additional protocol of localized thin-section CT for further assessment on recalled patients from lung cancer screening tests. Our approach of localized thin-section CT was integrated with radiomics features extraction and machine learning classification which was supervised by pathological diagnosis. Localized thin-section CT images of 122 nodules were retrospectively reviewed and 374 radiomics features were extracted. In this study, 48 nodules were benign and 74 malignant. There were nine patients with multiple nodules and four with synchronous multiple malignant nodules. Different machine learning classifiers with a stratified ten-fold cross-validation were used and repeated 100 times to evaluate classification accuracy. Of the image features extracted from the thin-section CT images, 238 (64%) were useful in differentiating between benign and malignant nodules. These useful features include CT density (p  =  0.002 518), sigma (p  =  0.002 781), uniformity (p  =  0.032 41), and entropy (p  =  0.006 685). The highest classification accuracy was 79% by the logistic classifier. The performance metrics of this logistic classification model was 0.80 for the positive predictive value, 0.36 for the false-positive rate, and 0.80 for the area under the receiver operating characteristic curve. Our approach of direct risk classification supervised by the pathological diagnosis with localized thin-section CT and radiomics feature extraction may support clinical physicians in determining truly malignant nodules and therefore reduce problems in lung cancer screening.

Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lad, Robert J.

1999-12-14

This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with filmmore » microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.« less

Thin film thermocouples for thermoelectric characterization of nanostructured materials

NASA Astrophysics Data System (ADS)

Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

2011-03-01

The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

Glow discharge plasma deposition of thin films

DOEpatents

Weakliem, Herbert A.; Vossen, Jr., John L.

1984-05-29

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Method of forming a thin unbacked metal foil

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

In a method of forming a thin (<2 .mu.m) unbacked metal foil having a desired curviplanar shape, a soluble polymeric film, preferably comprising polyvinyl alcohol, is formed on a supporting structure having a shape that defines the desired shape of the foil product. A layer of metal foil is deposited onto one side of the soluble film, preferably by vacuum vapor deposition. The metallized film is then immersed in a suitable solvent to dissolve the film and thereby leave the metal foil as an unbacked metal foil element mounted on the supporting structure. Aluminum foils less than 0.2 .mu.m (2,000 .ANG.) thick and having an areal density of less than 54 .mu.g/cm.sup.2 have been obtained.

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kalkan, N.

2016-10-01

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

Mapping quantum yield for (Fe-Zn-Sn-Ti)Ox photoabsorbers using a high throughput photoelectrochemical screening system.

PubMed

Xiang, Chengxiang; Haber, Joel; Marcin, Martin; Mitrovic, Slobodan; Jin, Jian; Gregoire, John M

2014-03-10

Combinatorial synthesis and screening of light absorbers are critical to material discoveries for photovoltaic and photoelectrochemical applications. One of the most effective ways to evaluate the energy-conversion properties of a semiconducting light absorber is to form an asymmetric junction and investigate the photogeneration, transport and recombination processes at the semiconductor interface. This standard photoelectrochemical measurement is readily made on a semiconductor sample with a back-side metallic contact (working electrode) and front-side solution contact. In a typical combinatorial material library, each sample shares a common back contact, requiring novel instrumentation to provide spatially resolved and thus sample-resolved measurements. We developed a multiplexing counter electrode with a thin layer assembly, in which a rectifying semiconductor/liquid junction was formed and the short-circuit photocurrent was measured under chopped illumination for each sample in a material library. The multiplexing counter electrode assembly demonstrated a photocurrent sensitivity of sub-10 μA cm(-2) with an external quantum yield sensitivity of 0.5% for each semiconductor sample under a monochromatic ultraviolet illumination source. The combination of cell architecture and multiplexing allows high-throughput modes of operation, including both fast-serial and parallel measurements. To demonstrate the performance of the instrument, the external quantum yields of 1819 different compositions from a pseudoquaternary metal oxide library, (Fe-Zn-Sn-Ti)Ox, at 385 nm were collected in scanning serial mode with a throughput of as fast as 1 s per sample. Preliminary screening results identified a promising ternary composition region centered at Fe0.894Sn0.103Ti0.0034Ox, with an external quantum yield of 6.7% at 385 nm.

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

DOE PAGES

Zhang, Ruihong; Cho, Seonghyuk; Lim, Daw Gen; ...

2016-03-15

We found that bulk metals and metal chalcogenides dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu 2Sn(Sx,Se 1-x) 3, and Cu 2ZnSn(SxSe 1-x) 4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Furthermore, Cu 2ZnSn(SxSe 1-x) 4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication

NASA Technical Reports Server (NTRS)

Smashey, Russell W. (Inventor)

2001-01-01

An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.

Enhanced absorption with quantum dots, metal nanoparticles, and 2D materials

NASA Astrophysics Data System (ADS)

Simsek, Ergun; Mukherjee, Bablu; Guchhait, Asim; Chan, Yin Thai

2016-03-01

We fabricate and characterize mono- and few- layers of MoS2 and WSe2 on glass and SiO2/Si substrates. PbS quantum dots and/or Au nanoparticles are deposited on the fabricated thin metal dichalcogenide films by controlled drop casting and electron beam evaporation techniques. The reflection spectra of the fabricated structures are measured with a spatially resolved reflectometry setup. Both experimental and numerical results show that surface functionalization with metal nanoparticles can enhance atomically thin transition metal dichalcogenides' absorption and scattering capabilities, however semiconducting quantum dots do not create such effect.

High resolution photoemission investigation: The oxidation of W

NASA Astrophysics Data System (ADS)

Morar, J. F.; Himpsel, F. J.; Hughes, G. J.; Jordan, J. L.; McFeely, F. R.; Hollinge, G.

High resolution photoemission measurements of surface oxide layers on tungsten has revealed a set of well resolved core level shifts characteristic of individual metal oxidation states. Measurement and analysis of this type of data can provide specific and quantitative chemical information about surface oxides. The formation of bonds between transition metals and strongly electronegative elements such as oxygen and fluorine results in charge transfer with the effect of shifting the metal core electron binding energies. The magnitude of such shifts depends primarily on two factors; the amount of charge transfer and the screening ability of the metals electrons. The size of core-level shifts tend to increase with additional charge transfer and be decreased by screening. In the case of tungsten the amount of screening should be a function of oxygen content since the oxygen ties up free electrons which are effective at screening. A continuous change in the tungsten core level shifts is observed with increasing oxygen content, i.e., as the screening changes from that characteristic of a metal screened to that characteristic of an insulator unscreened.

Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

NASA Astrophysics Data System (ADS)

Park, Sun-Gyu; Kim, Eunseong

2013-03-01

Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

Domain growth of carbon nanotubes assisted by dewetting of thin catalyst precursor films

NASA Astrophysics Data System (ADS)

Srivastava, Alok Kumar; Sachan, Priyanka; Samanta, Chandan; Mukhopadhyay, Kingsuk; Sharma, Ashutosh

2014-01-01

We explore self-organized dewetting of ultrathin films of a novel metal complex as a one step surface patterning method to create nanoislands of iron, using which spatially separated carbon nanostructures were synthesized. Dewetting of ultrathin metal complex films was induced by two different methods: liquid solvent exposure and thermal annealing to engender surface patterning. For thermal dewetting, thin films of the iron oleate complex were dewetted at high temperature. In the case of liquid solvent assisted dewetting, the metal complex, mixed with a sacrificial polymer (polystyrene) was spin coated as thin films (<40 nm) and then dewetted under an optimal solution mixture consisting of methyl ethyl ketone, acetone and water. The carrier polymer was then selectively removed to produce the iron metal islands. These metal islands were used for selective growth of discrete patches of multiwall CNTs and CNFs by a chemical vapor deposition (CVD) process. Solvent induced dewetting showed clear advantages over thermal dewetting owing to reduced size of catalyst domains formed by dewetting, an improved control over CNT growth as well as in its ability to immobilize the seed particles. The generic solution mediated dewetting and pattern generation in thin films of various catalytic precursors can thus be a powerful method for selective domain growth of a variety of functional nanomaterials.

Patterned thin metal film for the lateral resolution measurement of photoacoustic tomography

PubMed Central

2012-01-01

Background Image quality assessment method of photoacoustic tomography has not been completely standardized yet. Due to the combined nature of photonic signal generation and ultrasonic signal transmission in biological tissue, neither optical nor ultrasonic traditional methods can be used without modification. An optical resolution measurement technique was investigated for its feasibility for resolution measurement of photoacoustic tomography. Methods A patterned thin metal film deposited on silica glass provides high contrast in optical imaging due to high reflectivity from the metal film and high transmission from the glass. It provides high contrast when it is used for photoacoustic tomography because thin metal film can absorb pulsed laser energy. An US Air Force 1951 resolution target was used to generate patterned photoacoustic signal to measure the lateral resolution. Transducer with 2.25 MHz bandwidth and a sample submerged in water and gelatinous block were tested for lateral resolution measurement. Results Photoacoustic signal generated from a thin metal film deposited on a glass can propagate along the surface or through the surrounding medium. First, a series of experiments with tilted sample confirmed that the measured photoacoustic signal is what is propagating through the medium. Lateral resolution of the photoacoustic tomography system was successfully measured for water and gelatinous block as media: 0.33 mm and 0.35 mm in water and gelatinous material, respectively, when 2.25 MHz transducer was used. Chicken embryo was tested for biomedical applications. Conclusions A patterned thin metal film sample was tested for its feasibility of measuring lateral resolution of a photoacoustic tomography system. Lateral resolutions in water and gelatinous material were successfully measured using the proposed method. Measured resolutions agreed well with theoretical values. PMID:22794510

Polarization-dependent thin-film wire-grid reflectarray for terahertz waves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu, Tiaoming; School of Information Science and Engineering, Lanzhou University, Lanzhou 730000; Upadhyay, Aditi

2015-07-20

A thin-film polarization-dependent reflectarray based on patterned metallic wire grids is realized at 1 THz. Unlike conventional reflectarrays with resonant elements and a solid metal ground, parallel narrow metal strips with uniform spacing are employed in this design to construct both the radiation elements and the ground plane. For each radiation element, a certain number of thin strips with an identical length are grouped to effectively form a patch resonator with equivalent performance. The ground plane is made of continuous metallic strips, similar to conventional wire-grid polarizers. The structure can deflect incident waves with the polarization parallel to the stripsmore » into a designed direction and transmit the orthogonal polarization component. Measured radiation patterns show reasonable deflection efficiency and high polarization discrimination. Utilizing this flexible device approach, similar reflectarray designs can be realized for conformal mounting onto surfaces of cylindrical or spherical devices for terahertz imaging and communications.« less

Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, G. Y., E-mail: guoying-gao@mail.hust.edu.cn; Yao, K. L., E-mail: klyao@mail.hust.edu.cn

2014-11-03

Recently, ferromagnetic zinc-blende Mn{sub 1−x}Cr{sub x}S thin films (above x = 0.5) were fabricated experimentally on ZnSe substrate, which confirmed the previous theoretical prediction of half-metallic ferromagnetism in zinc-blende CrS. Here, we theoretically reveal that both Cr- and S-terminated (001) surfaces of the CrS thin films retain the half-metallicity. The CrS/ZnSe(001) heterogeneous junction exhibits excellent spin filtering and spin diode effects, which are explained by the calculated band structure and transmission spectra. The perfect spin transport properties indicate the potential applications of half-metallic CrS in spintronic devices. All computational results are obtained by using the density functional theory combined with nonequilibrium Green'smore » function.« less

All 2D, high mobility, flexible, transparent thin film transistor

DOEpatents

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

2017-01-17

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Radiofrequency dosimetry in subjects implanted with metallic straight wires: a numerical study.

PubMed

Mattei, E; Calcagnini, G; Censi, F; Triventi, M; Bartolini, P

2008-01-01

A numerical study to investigate the effects of the exposure to electromagnetic fields (EMF) at 900 and 1800 MHz on biological tissues implanted with thin metallic structures has been carried out, using the finite difference time domain (FDTD) solution technique. The results of the model show that the presence of a metallic wire yields to a significant increase in the local specific energy absorption rate (SAR). The present standards and/or guidelines on safe exposures of humans to EMF does not cover persons with implanted devices and thus the threshold levels to define safe exposure conditions might not apply in presence of high SAR gradients, such as the ones generated by thin metallic implanted objects. However, exposure to EMF fields below the actual safe levels even in presence of thin conductive structures cause rather low temperature rises (1 degrees C).

Eddy Current Testing for Detecting Small Defects in Thin Films

NASA Astrophysics Data System (ADS)

Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

2007-03-01

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

PubMed Central

Tougas, Ian M.; Amani, Matin; Gregory, Otto J.

2013-01-01

Temperatures of hot section components in today's gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges) for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today's engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire) thermocouples. PMID:24217356

Metallic and ceramic thin film thermocouples for gas turbine engines.

PubMed

Tougas, Ian M; Amani, Matin; Gregory, Otto J

2013-11-08

Temperatures of hot section components in today's gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges) for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today's engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire) thermocouples.

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

A theoretical investigation of single-molecule fluorescence detection on thin metallic layers.

PubMed

Enderlein, J

2000-04-01

In the present paper, the excitation and detection of single-molecule fluorescence over thin metallic films is studied theoretically within the framework of classical electrodynamics. The model takes into account the specific conditions of surface plasmon-assisted optical excitation, fluorescence quenching by the metal film, and detection geometry. Extensive numerical results are presented for gold, silver, and aluminum films, showing the detectable fluorescence intensities and their dependence on film thickness and the fluorescent molecule's position under optimal excitation conditions.

Discontinuous/continuous metal films grown on photosensitive glass

NASA Astrophysics Data System (ADS)

Trotter, D. M., Jr.; Smith, D. W.

1984-07-01

A new effect which allows direct formation of thin metal films of controlled morphology is described. Patterns of glass-ceramic opal are developed in photosensitive glass samples by UV irradiation and heat treatment. The samples are then ion exchanged in molten salt baths containing Ag+ or Cu+ ions. On subsequent firing in a hydrogen atmosphere, continuous films with typical thin metal films properties grow on the opal regions of the samples. Discontinuous films, characterized by activated resistivities and switching, grow on the glassy regions.

Electrochemical planarization

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1993-10-26

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

PubMed Central

Lee, Sun-Kyu; Hwang, Sori; Kim, Yoon-Kee

2017-01-01

We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol–gel (IGSG) resist on glass using a two-layer polydimethylsiloxane (PDMS) stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications. PMID:28546899

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting.

PubMed

Lee, Sun-Kyu; Hwang, Sori; Kim, Yoon-Kee; Oh, Yong-Jun

2017-01-01

We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol-gel (IGSG) resist on glass using a two-layer polydimethylsiloxane (PDMS) stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications.

Time-Resolved In Situ Liquid-Phase Atomic Force Microscopy and Infrared Nanospectroscopy during the Formation of Metal-Organic Framework Thin Films.

PubMed

Mandemaker, Laurens D B; Filez, Matthias; Delen, Guusje; Tan, Huanshu; Zhang, Xuehua; Lohse, Detlef; Weckhuysen, Bert M

2018-04-19

Metal-organic framework (MOF) thin films show unmatched promise as smart membranes and photocatalytic coatings. However, their nucleation and growth resulting from intricate molecular assembly processes are not well understood yet are crucial to control the thin film properties. Here, we directly observe the nucleation and growth behavior of HKUST-1 thin films by real-time in situ AFM at different temperatures in a Cu-BTC solution. In combination with ex situ infrared (nano)spectroscopy, synthesis at 25 °C reveals initial nucleation of rapidly growing HKUST-1 islands surrounded by a continuously nucleating but slowly growing HKUST-1 carpet. Monitoring at 13 and 50 °C shows the strong impact of temperature on thin film formation, resulting in (partial) nucleation and growth inhibition. The nucleation and growth mechanisms as well as their kinetics provide insights to aid in future rational design of MOF thin films.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Method of fabricating conductive electrodes on the front and backside of a thin film structure

DOEpatents

Tabada, Phillipe J [Roseville, CA; Tabada, legal representative, Melody; Pannu, Satinderpall S [Pleasanton, CA

2011-05-22

A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.

Evaluation of the Applicability of Environmental Magnetic Pollution Screening in Soils of Basaltic Origin: Results from Nashik Thermal Power Station, Maharashtra, India

NASA Astrophysics Data System (ADS)

Blaha, U.; Nathani, B.; Das, P. K.; Kannan, D.

2011-12-01

Magnetic parameters and heavy metal contents of highly magnetic topsoil of the Deccan Trap basalt region were investigated for their potential to be used for environmental magnetic pollution screening. Data of magnetic susceptibility (χ) and soft isothermal remanent magnetization (Soft IRM) of 55 soil samples from N-S and W-E transects reveal a significant input of anthropogenic magnetic particulate matter within a range of 6 km around both the coal fired power plant and its adjacent ash pond. Less developed and thin topsoil layers as well as limited contribution from the fly ash sources in N direction pose difficulties for unambiguous assessment of the magnetic parameters. Heavy metal data, i.e. Pb, Zn and Cu concentrations of the soil grain size of <63 μm reveal similar distribution patterns as obtained from the magnetic parameters of all directions. Fluctuations are observed in magnetic as well as in heavy metal data and are primarily attributed to soil development. Thermo-magnetic measurements identify magnetite of anthropogenic origin in the vicinity of the pollution source based on Verwey-Transition and Hopkinson peak. The quantitative decrease of the anthropogenic ferrimagnetic mineral concentration with distance is proven by Soft IRM. Confirmation of the presence of extremely high and low amounts of ash particles in the magnetically and chemically distinguished zones is provided by scanning electron microscopy (SEM) on quantitatively extracted magnetic particles at 5.5 km and 11.9 km distance. Evaluation of magnetic and chemical data including pollution load indices (PLIS) of Pb, Zn and Cu reveals good relationship of χ with the metal contents. The highest of the PLIS for Pb, Zn and Cu reveals threefold enhancement of concentration with respect to the natural background at 12 km distance and is obtained close to the fly ash sources.

Reduction of metallosis in hip implant using thin film coating

NASA Astrophysics Data System (ADS)

Rajeshshyam, R.; Chockalingam, K.; Gayathri, V.; Prakash, T.

2018-04-01

Hip implant finds its emerging attraction due to it continuous demand over the years. The hip implants (femoral head) and acetabulum cup) mainly fabricated by metals such as stainless steel, cobalt chrome and titanium alloys, other than that ceramics and polyethylene have been used. The metal-on-metal hip implant was found to be best implant material for most of the surgeons due to its high surface finish, low wear rate and low chance of dislocation from its position after implanting. Where in metal based hip implant shows less wear rate of 0.01mm3/year. Metal-on-metal implant finds its advantage over other materials both in its mechanical and physical stability against human load. In M-O-M Cobalt- chromium alloys induce metal allergy. The metal allergy (particulate debris) that is generated by wear, fretting, fragmentation and which is unavoidable when a prosthesis is implanted, can induce an inflammatory reaction in some circumstances. The objectives of this research to evaluate thin film coating with Nano particle additives to reduce the wear leads to regarding metal ion release. Experimental results reveals that thin film Sol-Gel coating with 4wt. % of specimen reduced the cobalt and chromium ion release and reduces the wear rate. Wear rate reduced by 98% for 4wt. % graphene in 20N and 95% for 4wt. % graphene in 10N.

Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

2017-09-01

Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

Thin film photovoltaic device

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1982-01-01

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

{ital In-situ} x-ray investigation of hydrogen charging in thin film bimetallic electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.; Wiesmann, H.; Ruckman, M.W.

Hydrogen uptake and discharge by thin metallic films under potentiostatic control was studied using x-ray diffraction at the National Synchrotron Light Source (NSLS). The formation of metal-hydrogen phases in Pd, Pd-capped Nb and Pd/Nb multilayer electrode structures was deduced from x-ray diffraction data and correlated with the cyclic voltammetry (CV) peaks. The x-ray data was also used to construct a plot of the hydrogen concentration as a function of cell potential for a multilayered thin film. {copyright} {ital 1997 Materials Research Society.}

Mott-metal transition in layered perovskite iridate thin films via field-effect doping

NASA Astrophysics Data System (ADS)

Cheema, Suraj; Turcaud, Jeremy; Nelson, Chris; Salahuddin, Sayeef; Ramesh, Ramamoorthy

We report on electrostatic gating of spin-orbit coupled Mott insulator Sr2IrO4 (Sr214) via ferroelectric field effect doping. Field effect doping has been used to modulate electronic phenomena in emerging 2D systems and strongly correlated oxides, but 5 d systems with large spin-orbit coupling have yet to be explored. Upon switching the polarization field of ferroelectric Pb(Zr20Ti80)O3 (PZT) to the down-poled (electron-accumulation) state, temperature-dependent resistivity measurements indicate extremely metallic behavior in the ultrathin Sr214 channel. This work successfully closes the Mott gap in Sr214 in a ''clean'' doping environment free of chemical disorder, thereby strengthening the link to the isostrucutral high-Tc cuprates, as Sr214 has been predicted to host d-wave superconductivity upon electron doping the parent antiferromagnetic insulating phase. Furthermore, the metallic behavior in Sr214 persists for thickness beyond the expected screening length, suggestive of a collective carrier delocalization mechanism. Electrostatically doped carriers prove to be a useful method for tuning the competition between spin-orbit and Coulomb interactions in order to trigger novel phase transitions, such as the Mott-metal crossover. This work was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

Thin metal electrode for AMTEC

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor); Wheeler, Bob L. (Inventor); Jefferies-Nakamura, Barbara (Inventor); Lamb, James L. (Inventor); Bankston, C. Perry (Inventor); Cole, Terry (Inventor)

1989-01-01

An electrode having higher power output is formed of a thin, porous film (less than 1 micrometer) applied to a beta-alumina solid electrolyte (BASE). The electrode includes an open grid, current collector such as a series of thin, parallel, grid lines applied to the thin film and a plurality of cross-members such as loop of metal wire surrounding the BASE tube. The loops are electrically connected by a bus wire. The overall impedance of the electrode considering both the contributions from the bulk BASE and the porous electrode BASE interface is low, about 0.5 OHM/cm.sup.2 and power densities of over 0.3 watt/cm.sup.2 for extended periods.

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

NASA Astrophysics Data System (ADS)

Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

2015-03-01

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

Alkali metal-refractory metal biphase electrode for AMTEC

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor); Bankston, Clyde P. (Inventor); Cole, Terry (Inventor); Khanna, Satish K. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Wheeler, Bob L. (Inventor)

1989-01-01

An electrode having increased output with slower degradation is formed of a film applied to a beta-alumina solid electrolyte (BASE). The film comprises a refractory first metal M.sup.1 such as a platinum group metal, suitably platinum or rhodium, capable of forming a liquid or a strong surface adsorption phase with sodium at the operating temperature of an alkali metal thermoelectric converter (AMTEC) and a second refractory metal insoluble in sodium or the NaM.sup.1 liquid phase such as a Group IVB, VB or VIB metal, suitably tungsten, molybdenum, tantalum or niobium. The liquid phase or surface film provides fast transport through the electrode while the insoluble refractory metal provides a structural matrix for the electrode during operation. A trilayer structure that is stable and not subject to deadhesion comprises a first, thin layer of tungsten, an intermediate co-deposited layer of tungsten-platinum and a thin surface layer of platinum.

Guest-Induced Two-Way Structural Transformation in a Layered Metal-Organic Framework Thin Film.

PubMed

Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2016-12-28

Fabrication of thin films made of metal-organic frameworks (MOFs) has been intensively pursued for practical applications that use the structural response of MOFs. However, to date, only physisorption-induced structural response has been studied in these films. Chemisorption can be expected to provide a remarkable structural response because of the formation of bonds between guest molecules and reactive metal sites in host MOFs. Here, we report that chemisorption-induced two-way structural transformation in a nanometer-sized MOF thin film. We prepared a two-dimensional layered-type MOF Fe[Pt(CN) 4 ] thin film using a step-by-step approach. Although the as-synthesized film showed poor crystallinity, the dehydrated form of this thin film had a highly oriented crystalline nature (Film-D) as confirmed by synchrotron X-ray diffraction (XRD). Surprisingly, under water and pyridine vapors, Film-D showed chemisorption-induced dynamic structural transformations to Fe(L) 2 [Pt(CN) 4 ] thin films [L = H 2 O (Film-H), pyridine (Film-P)], where water and pyridine coordinated to the open Fe 2+ site. Dynamic structural transformations were also confirmed by in situ XRD, sorption measurement, and infrared reflection absorption spectroscopy. This is the first report of chemisorption-induced dynamic structural response in a MOF thin film, and it provides useful insights, which would lead to future practical applications of MOFs utilizing chemisorption-induced structural responses.

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

NASA Astrophysics Data System (ADS)

Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

2012-04-01

In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

High pressure mechanical seal

NASA Technical Reports Server (NTRS)

Babel, Henry W. (Inventor); Anderson, Raymond H. (Inventor)

1996-01-01

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After compression, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as measured using the Helium leak test.

Photoresist thin-film effects on alignment process capability

NASA Astrophysics Data System (ADS)

Flores, Gary E.; Flack, Warren W.

1993-08-01

Two photoresists were selected for alignment characterization based on their dissimilar coating properties and observed differences on alignment capability. The materials are Dynachem OFPR-800 and Shipley System 8. Both photoresists were examined on two challenging alignment levels in a submicron CMOS process, a nitride level and a planarized second level metal. An Ultratech Stepper model 1500 which features a darkfield alignment system with a broadband green light for alignment signal detection was used for this project. Initially, statistically designed linear screening experiments were performed to examine six process factors for each photoresist: viscosity, spin acceleration, spin speed, spin time, softbake time, and softbake temperature. Using the results derived from the screening experiments, a more thorough examination of the statistically significant process factors was performed. A full quadratic experimental design was conducted to examine viscosity, spin speed, and spin time coating properties on alignment. This included a characterization of both intra and inter wafer alignment control and alignment process capability. Insight to the different alignment behavior is analyzed in terms of photoresist material properties and the physical nature of the alignment detection system.

Bioinspired Multifunctional Superhydrophobic Surfaces with Carbon-Nanotube-Based Conducting Pastes by Facile and Scalable Printing.

PubMed

Han, Joong Tark; Kim, Byung Kuk; Woo, Jong Seok; Jang, Jeong In; Cho, Joon Young; Jeong, Hee Jin; Jeong, Seung Yol; Seo, Seon Hee; Lee, Geon-Woong

2017-03-01

Directly printed superhydrophobic surfaces containing conducting nanomaterials can be used for a wide range of applications in terms of nonwetting, anisotropic wetting, and electrical conductivity. Here, we demonstrated that direct-printable and flexible superhydrophobic surfaces were fabricated on flexible substrates via with an ultrafacile and scalable screen printing with carbon nanotube (CNT)-based conducting pastes. A polydimethylsiloxane (PDMS)-polyethylene glycol (PEG) copolymer was used as an additive for conducting pastes to realize the printability of the conducting paste as well as the hydrophobicity of the printed surface. The screen-printed conducting surfaces showed a high water contact angle (WCA) (>150°) and low contact angle hysteresis (WCA < 5°) at 25 wt % PDMS-PEG copolymer in the paste, and they have an electrical conductivity of over 1000 S m -1 . Patterned superhydrophobic surfaces also showed sticky superhydrophobic characteristics and were used to transport water droplets. Moreover, fabricated films on metal meshes were used for an oil/water separation filter, and liquid evaporation behavior was investigated on the superhydrophobic and conductive thin-film heaters by applying direct current voltage to the film.

Suppression of copper thin film loss during graphene synthesis.

PubMed

Lee, Alvin L; Tao, Li; Akinwande, Deji

2015-01-28

Thin metal films can be used to catalyze the growth of nanomaterials in place of the bulk metal, while greatly reducing the amount of material used. A big drawback of copper thin films (0.5-1.5 μm thick) is that, under high temperature/vacuum synthesis, the mass loss of films severely reduces the process time due to discontinuities in the metal film, thereby limiting the time scale for controlling metal grain and film growth. In this work, we have developed a facile method, namely "covered growth" to extend the time copper thin films can be exposed to high temperature/vacuum environment for graphene synthesis. The key to preventing severe mass loss of copper film during the high temperature chemical vapor deposition (CVD) process is to have a cover piece on top of the growth substrate. This new "covered growth" method enables the high-temperature annealing of the copper film upward of 4 h with minimal mass loss, while increasing copper film grain and graphene domain size. Graphene was then successfully grown on the capped copper film with subsequent transfer for device fabrication. Device characterization indicated equivalent physical, chemical, and electrical properties to conventional CVD graphene. Our "covered growth" provides a convenient and effective solution to the mass loss issue of thin films that serve as catalysts for a variety of 2D material syntheses.

Thermal emf generated by laser emission along thin metal films

NASA Astrophysics Data System (ADS)

Konov, V. I.; Nikitin, P. I.; Satiukov, D. G.; Uglov, S. A.

1991-07-01

Substantial pulse thermal emf values (about 1.5 V) have been detected along the substrate during the interaction of laser emission with thin metal films (Ni, Ti, and Bi) sprayed on corrugated substrates. Relationships are established between the irradiation conditions and parameters of the generated electrical signals. Possible mechanisms of thermal emf generation and promising applications are discussed.

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

NASA Astrophysics Data System (ADS)

Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

2011-01-01

Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

PubMed Central

Dumée, Ludovic F.; She, Fenghua; Duke, Mikel; Gray, Stephen; Hodgson, Peter; Kong, Lingxue

2014-01-01

Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm) as well as the sintering pressure (5–20 ton·m−2) and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested. PMID:28344241

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

NASA Astrophysics Data System (ADS)

Suhandi, A.; Tayubi, Y. R.; Arifin, P.

2016-04-01

Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

Cervical Cancer Screening (PDQ®)—Health Professional Version

Cancer.gov

Cervical cancer screening tests (e.g., the Papanicolaou (Pap) Test, HPV DNA, Thin-prep) reduce mortality from cervical cancer. Get detailed information about the evidence behind, and the potential benefits and harms of cervical cancer screening in this summary for clinicians.

Tailoring plasmonic properties of metal nanoparticle-embedded dielectric thin films: the sandwich method of preparation

NASA Astrophysics Data System (ADS)

Laha, Ranjit; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-09-01

Tailoring of plasmonic properties of metal nanoparticle-embedded dielectric thin films are very crucial for many thin film-based applications. We, herein, investigate the various ways of tuning the plasmonic positions of gold nanoparticles (AuNPs)-embedded indium oxide thin films (Au:IO) through a sequence-specific sandwich method. The sandwich method is a four-step process involving deposition of In2O3 film by magnetron sputtering in first and fourth steps, thermal evaporation of Au on to In2O3 film in second and annealing of Au/In2O3 film in the third step. The Au:IO films were characterized by x-ray diffraction, spectrophotometry and transmission electron microscopy. The size and shape of the embedded nanoparticles were found from Rutherford back-scattering spectrometry. Based on dynamic Maxwell Garnett theory, the observed plasmon resonance position was ascribed to the oblate shape of AuNPs formed in sandwich method. Finally, through experimental data, it was shown that the plasmon resonance position of Au:IO thin films can be tuned by 125 nm. The method shown here can be used to tune the plasmon resonance position over the entire range of visible region for the thin films made from other combinations of metal-dielectric pair.

Effect of scanning speed on continuous wave laser scribing of metal thin films: theory and experiment

NASA Astrophysics Data System (ADS)

Shahbazi, AmirHossein; Koohian, Ata; Madanipour, Khosro

2017-01-01

In this paper continuous wave laser scribing of the metal thin films have been investigated theoretically and experimentally. A formulation is presented based on parameters like beam power, spot size, scanning speed and fluence thresholds. The role of speed on the transient temperature and tracks width is studied numerically. By using two frameworks of pulsed laser ablation of thin films and laser printing on paper, the relation between ablation width and scanning speed has been derived. Furthermore, various speeds of the focused 450 nm continuous laser diode with an elliptical beam spot applied to a 290 nm copper thin film coated on glass, experimentally. The beam power was 150 mW after spatial filtering. By fitting the theoretical formulation to the experimental data, the threshold fluence and energy were obtained to be 13.2 J mm-2 and 414~μ J respectively. An anticipated theoretical parameter named equilibrium~border was verified experimentally. It shows that in the scribing of the 290 nm copper thin film, at a distance where the intensity reaches about 1/e of its maximum value, the absorbed fluence on the surface is equal to zero. Therefore the application of continuous laser in metal thin film ablation has different mechanism from pulsed laser drilling and beam scanning in printers.

Thin film metallic sensors in an alternating magnetic field for magnetic nanoparticle hyperthermia cancer therapy

NASA Astrophysics Data System (ADS)

Hussein, Z. A.; Boekelheide, Z.

In magnetic nanoparticle hyperthermia in an alternating magnetic field for cancer therapy, it is important to monitor the temperature in situ. This can be done optically or electrically, but electronic measurements can be problematic because conducting parts heat up in a changing magnetic field. Microfabricated thin film sensors may be advantageous because eddy current heating is a function of size, and are promising for further miniaturization of sensors and fabrication of arrays of sensors. Thin films could also be used for in situ magnetic field sensors or for strain sensors. For a proof of concept, we fabricated a metallic thin film resistive thermometer by photolithographically patterning a 500Å Au/100Å Cr thin film on a glass substrate. Measurements were taken in a solenoidal coil supplying 0.04 T (rms) at 235 kHz with the sensor parallel and perpendicular to the magnetic field. In the parallel orientation, the resistive thermometer mirrored the background heating from the coil, while in the perpendicular orientation self-heating was observed due to eddy current heating of the conducting elements by Faraday's law. This suggests that metallic thin film sensors can be used in an alternating magnetic field, parallel to the field, with no significant self-heating.

Absence of Cyclotron Resonance in the Anomalous Metallic Phase in InOx

NASA Astrophysics Data System (ADS)

Wang, Youcheng; Tamir, I.; Shahar, D.; Armitage, N. P.

2018-04-01

It is observed that many thin superconducting films with not too high disorder level (generally RN/□<2000 Ω ) placed in magnetic field show an anomalous metallic phase where the resistance is low but still finite as temperature goes to zero. Here we report in weakly disordered amorphous InOx thin films that this anomalous metal phase possesses no cyclotron resonance and hence non-Drude electrodynamics. The absence of a finite frequency resonant mode can be associated with a vanishing downstream component of the vortex current parallel to the supercurrent and an emergent particle-hole symmetry of this metal, which establishes its non-Fermi-liquid character.

Thin film hydrogen sensor

DOEpatents

Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

1994-01-01

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Thin film hydrogen sensor

DOEpatents

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

NASA Astrophysics Data System (ADS)

Fu, Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Jürgen

2006-12-01

FeS polycrystalline thin films were prepared on float glass at 500°C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360to600°C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

DOE PAGES

Gao, Jian; Kim, Young Duck; Liang, Liangbo; ...

2016-09-20

Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.

Wheel Abrasion Experiment Metals Selection for Mars Pathfinder Mission

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Fatemi, Navid S.; Wilt, David M.; Ferguson, Dale C.; Hoffman, Richard; Hill, Maria M.; Kaloyeros, Alain E.

1996-01-01

A series of metals was examined for suitability for the Wheel Abrasion Experiment, one of ten microrover experiments of the Mars Pathfinder Mission. The seven candidate metals were: Ag, Al, Au, Cu, Ni, Pt, and W. Thin films of candidate metals from 0.1 to 1.0 micrometer thick were deposited on black anodized aluminum coupons by e-beam and resistive evaporation and chemical vapor deposition. Optical, corrosion, abrasion, and adhesion criteria were used to select Al, Ni, and Pt. A description is given of the deposition and testing of thin films, followed by a presentation of experimental data and a brief discussion of follow-on testing and flight qualification.

Emissivity measurements in thin metallized membrane reflectors used for microwave radiometer sensors

NASA Technical Reports Server (NTRS)

Schroeder, Lyle C.; Cravey, Robin L.; Scherner, Michael J.; Hearn, Chase P.; Blume, Hans-Juergen C.

1995-01-01

This paper is concerned with electromagnetic losses in metallized films used for inflatable reflectors. An inflatable membrane is made of tough elastic material such as Kapton, and it is not electromagnetically reflective by design. A film of conducting metal is added to the membrane to enhance its reflective properties. Since the impetus for use of inflatables for spacecraft is the light weight and compact packaging, it is important that the metal film be as thin as possible. However, if the material is not conductive or thick enough, the radiation due to the emissivity of the reflector could be a significant part of the radiation gathered by the radiometer. The emissivity would be of little consequence to a radar or solar collector; but for a radiometer whose signal is composed of thermal radiation, this contribution could be severe. Bulk properties of the metal film cannot be used to predict its loss. For this reason, a program of analysis and measurement was undertaken to determine the emissivities of a number of candidate metallized film reflectors. This paper describes the three types of measurements which were performed on the metallized thin films: (1) a network analyzer system with an L-band waveguide; (2) an S-band radiometer; and (3) a network analyzer system with a C-band antenna free-space transmission system.

A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

DOE PAGES

Yu, Shifeng; Wang, Shuyu; Lu, Ming; ...

2017-12-15

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less

Electron and lattice dynamics of transition metal thin films observed by ultrafast electron diffraction and transient optical measurements.

PubMed

Nakamura, A; Shimojima, T; Nakano, M; Iwasa, Y; Ishizaka, K

2016-11-01

We report the ultrafast dynamics of electrons and lattice in transition metal thin films (Au, Cu, and Mo) investigated by a combination of ultrafast electron diffraction (UED) and pump-probe optical methods. For a single-crystalline Au thin film, we observe the suppression of the diffraction intensity occuring in 10 ps, which direcly reflects the lattice thermalization via the electron-phonon interaction. By using the two-temperature model, the electron-phonon coupling constant ( g ) and the electron and lattice temperatures ( T e , T l ) are evaluated from UED, with which we simulate the transient optical transmittance. The simulation well agrees with the experimentally obtained transmittance data, except for the slight deviations at the initial photoexcitation and the relaxed quasi-equilibrium state. We also present the results similarly obtained for polycrystalline Au, Cu, and Mo thin films and demonstrate the electron and lattice dynamics occurring in metals with different electron-phonon coupling strengths.

Tailoring the charge carrier in few layers MoS2 field-effect transistors by Au metal adsorbate

NASA Astrophysics Data System (ADS)

Singh, Arun Kumar; Pandey, Rajiv K.; Prakash, Rajiv; Eom, Jonghwa

2018-04-01

It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS2) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS2. After deposition of Au thin layer, the threshold voltages of FL MoS2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS2 nanosheets. The surface morphology of Au metal on FL MoS2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO2.

High extinction ratio and low transmission loss thin-film terahertz polarizer with a tunable bilayer metal wire-grid structure.

PubMed

Huang, Zhe; Parrott, Edward P J; Park, Hongkyu; Chan, Hau Ping; Pickwell-MacPherson, Emma

2014-02-15

A thin-film terahertz polarizer is proposed and realized via a tunable bilayer metal wire-grid structure to achieve high extinction ratios and good transmission. The polarizer is fabricated on top of a thin silica layer by standard micro-fabrication techniques to eliminate the multireflection effects. The tunable alignment of the bilayer aluminum-wire grid structure enables tailoring of the extinction ratio and transmission characteristics. Using terahertz time-domain spectroscopy (THz-TDS), a fabricated polarizer is characterized, with extinction ratios greater than 50 dB and transmission losses below 1 dB reported in the 0.2-1.1 THz frequency range. These characteristics can be improved by further tuning the polarizer parameters such as the pitch, metal film thickness, and lateral displacement.

Iron-Terephthalate Coordination Network Thin Films Through In-Situ Atomic/Molecular Layer Deposition.

PubMed

Tanskanen, A; Karppinen, M

2018-06-12

Iron terephthalate coordination network thin films can be fabricated using the state-of-the-art gas-phase atomic/molecular layer deposition (ALD/MLD) technique in a highly controlled manner. Iron is an Earth-abundant and nonhazardous transition metal, and with its rich variety of potential applications an interesting metal constituent for the inorganic-organic coordination network films. Our work underlines the role of the metal precursor used when aiming at in-situ ALD/MLD growth of crystalline inorganic-organic thin films. We obtain crystalline iron terephthalate films when FeCl 3 is employed as the iron source whereas depositions based on the bulkier Fe(acac) 3 precursor yield amorphous films. The chemical composition and structure of the films are investigated with GIXRD, XRR, FTIR and XPS.

Method of manufacturing a shapeable short-resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Plasmonic Ag nanostructures on thin substrates for enhanced energy harvesting

NASA Astrophysics Data System (ADS)

Osgood, R. M.; Giardini, S. A.; Carlson, J. B.; Gear, C.; Diest, K.; Rothschild, M.; Fernandes, G. E.; Xu, J.; Kooi, S.; Periasamy, P.; O'Hayre, R.; Parilla, P.; Berry, J.; Ginley, D.

2013-09-01

Nanoparticles and nanostructures with plasmonic resonances are currently being employed to enhance the efficiency of solar cells. Ag stripe arrays have been shown theoretically to enhance the short-circuit current of thin silicon layers. Such Ag stripes are combined with 200 nm long and 60 nm wide "teeth", which act as nanoantennas, and form vertical rectifying metal-insulator-metal (MIM) nanostructures on metallic substrates coated with thin oxides, such as Nb/NbOx films. We characterize experimentally and theoretically the visible and near-infrared spectra of these "stripeteeth" arrays, which act as microantenna arrays for energy harvesting and detection, on silicon substrates. Modeling the stripe-teeth arrays predicts a substantial net a.c. voltage across the MIM diode, even when the stripe-teeth microrectenna arrays are illuminated at normal incidence.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

NASA Astrophysics Data System (ADS)

Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael

We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2014-10-01

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (Vth). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Investigation of ITO free transparent conducting polymer based electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Vikas; Sapna,; Sachdev, Kanupriya

2016-05-23

The last few decades have seen a significant improvement in organic semiconductor technology related to solar cell, light emitting diode and display panels. The material and structure of the transparent electrode is one of the major concerns for superior performance of devices such as OPV, OLED, touch screen and LCD display. Commonly used ITO is now restricted due to scarcity of indium, its poor mechanical properties and rigidity, and mismatch of energy levels with the active layer. Nowadays DMD (dielectric-metal-dielectric) structure is one of the prominent candidates as alternatives to ITO based electrode. We have used solution based spin coatedmore » polymer layer as the dielectric layer with silver thin film embedded in between to make a polymer-metal-polymer (PMP) structure for TCE applications. The PMP structure shows low resistivity (2.3 x 10{sup −4}Ω-cm), high carrier concentration (2.9 x 10{sup 21} cm{sup −3}) and moderate transparency. The multilayer PMP structure is characterized with XRD, AFM and Hall measurement to prove its suitability for opto-electronic device applications.« less

Investigation of graphene-on-metal substrates for SPR-based sensor using finite-difference time domain.

PubMed

Said, Fairus Atida; Menon, Pulliyaseri Susthitha; Rajendran, Venkatachalam; Shaari, Sahbudin; Majlis, Burhanuddin Y

2017-12-01

In this study, the authors investigated the effects of a single layer graphene as a coating layer on top of metal thin films such as silver, gold, aluminum and copper using finite-difference time domain method. To enhance the resolution of surface plasmon resonance (SPR) sensor, it is necessary to increase the SPR reflectivity and decrease the full-width-half maximum (FWHM) of the SPR curve so that there is minimum uncertainty in the determination of the resonance dip. Numerical data was verified with analytical and experimental data where all the data were in good agreement with resonance angle differing in <10% due to noise present in components such as humidity and temperature. In further analysis, reflectivity and FWHM were compared among four types of metal with various thin film thicknesses where graphene was applied on top of the metal layers, and data was compared against pure conventional metal thin films. A 60 nm-thick Au thin film results in higher performance with reflectivity of 92.4% and FWHM of 0.88° whereas single layer graphene-on-60 nm-thick Au gave reflectivity of 91.7% and FWHM of 1.32°. However, a graphene-on-40 nm-thick Ag also gave good performance with narrower FWHM of 0.88° and reflection spectra of 89.2%.

Work function and quantum efficiency study of metal oxide thin films on Ag(100)

NASA Astrophysics Data System (ADS)

Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

2018-04-01

Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

High Tc superconducting materials and devices

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1990-01-01

The high Tc Y1Ba2Cu3O(7-x) ceramic materials, initially developed in 1987, are now being extensively investigated for a variety of engineering applications. The superconductor applications which are presently identified as of most interest to NASA-LaRC are low-noise, low thermal conductivity grounding links; large-area linear Meissner-effect bearings; and sensitive, low-noise sensors and leads. Devices designed for these applications require the development of a number of processing and fabrication technologies. Included among the technologies most specific to the present needs are tapecasting, melt texturing, magnetic field grain alignment, superconductor/polymer composite fabrication, thin film MOD (metal-organic decomposition) processing, screen printing of thick films, and photolithography of thin films. The overall objective of the program was to establish a high Tc superconductivity laboratory capability at NASA-LaRC and demonstrate this capability by fabricating superconducting 123 material via bulk and thin film processes. Specific objectives include: order equipment and set up laboratory; prepare 1 kg batches of 123 material via oxide raw material; construct tapecaster and tapecaster 123 material; fabricate 123 grounding link; fabricate 123 composite for Meissner linear bearing; develop 123 thin film processes (nitrates, acetates); establish Tc and Jc measurement capability; and set up a commercial use of space program in superconductivity at LaRC. In general, most of the objectives of the program were met. Finally, efforts to implement a commercial use of space program in superconductivity at LaRC were completed and at least two industrial companies have indicated their interest in participating.

Preparation of thin ceramic films via an aqueous solution route

DOEpatents

Pederson, Larry R.; Chick, Lawrence A.; Exarhos, Gregory J.

1989-01-01

A new chemical method of forming thin ceramic films has been developed. An aqueous solution of metal nitrates or other soluble metal salts and a low molecular weight amino acid is coated onto a substrate and pyrolyzed. The amino acid serves to prevent precipitation of individual solution components, forming a very viscous, glass-like material as excess water is evaporated. Using metal nitrates and glycine, the method has been demonstrated for zirconia with various levels of yttria stabilization, for lanthanum-strontium chromites, and for yttrium-barium-copper oxide superconductors on various substrates.

Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailovskii, V., E-mail: v.mikhailovskii@spbu.ru; IRC for Nanotechnology, Research Park, St.-Petersburg State University; Petrov, Yu.

2016-06-17

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

Metal Electrodeposition on an Integrated, Screen-Printed Electrode Assembly

ERIC Educational Resources Information Center

Chyan, Yieu; Chyan, Oliver

2008-01-01

In this lab experiment, screen-printed electrode strips are used to illustrate the essential concepts of electrochemistry, giving students an opportunity to explore metal electrodeposition processes. In the past, metal electrodeposition experiments were seldom included in general chemistry labs because of the difficulty of maintaining separate…

Thermally stable diamond brazing

DOEpatents

Radtke, Robert P [Kingwood, TX

2009-02-10

A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

Examining metallic glass formation in LaCe:Nb by ion implantation

DOE PAGES

Sisson, Richard; Reinhart, Cameron; Bridgman, Paul; ...

2017-01-01

In order to combine niobium (Nb) with lanthanum (La) and cerium (Ce), Nb ions were deposited within a thin film of these two elements. According to the Hume-Rothery rules, these elements cannot be combined into a traditional crystalline metallic solid. The creation of an amorphous metallic glass consisting of Nb, La, and Ce is then investigated. Amorphous metallic glasses are traditionally made using fast cooling of a solution of molten metals. In this paper, we show the results of an experiment carried out to form a metallic glass by implanting 9 MeV Nb 3+ atoms into a thin film ofmore » La and Ce. Prior to implantation, the ion volume distribution is calculated by Monte Carlo simulation using the SRIM tool suite. As a result, using multiple methods of electron microscopy and material characterization, small quantities of amorphous metallic glass are indeed identified.« less

The vertical metallicity gradients of mono-age stellar populations in the Milky Way with the RAVE and Gaia data

NASA Astrophysics Data System (ADS)

Ciucǎ, Ioana; Kawata, Daisuke; Lin, Jane; Casagrande, Luca; Seabroke, George; Cropper, Mark

2018-03-01

We investigate the vertical metallicity gradients of five mono-age stellar populations between 0 and 11 Gyr for a sample of 18 435 dwarf stars selected from the cross-matched Tycho-Gaia Astrometric Solution and Radial Velocity Experiment (RAVE) Data Release 5. We find a correlation between the vertical metallicity gradients and age, with no vertical metallicity gradient in the youngest population and an increasingly steeper negative vertical metallicity gradient for the older stellar populations. The metallicity at disc plane remains almost constant between 2 and 8 Gyr, and it becomes significantly lower for the 8 < τ ≤ 11 Gyr population. The current analysis also reveals that the intrinsic dispersion in metallicity increases steadily with age. We discuss that our results are consistent with a scenario that (thin) disc stars formed from a flaring (thin) star-forming disc.

Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses.

PubMed

Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C; Altman, Sidney; Schwarz, Udo D; Kyriakides, Themis R; Schroers, Jan

2016-05-27

Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses

NASA Astrophysics Data System (ADS)

Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B. Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C.; Altman, Sidney; Schwarz, Udo D.; Kyriakides, Themis R.; Schroers, Jan

2016-05-01

Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses

PubMed Central

Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B. Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C.; Altman, Sidney; Schwarz, Udo D.; Kyriakides, Themis R.; Schroers, Jan

2016-01-01

Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design. PMID:27230692

A transparent projection screen based on plasmonic Ag nanocubes

NASA Astrophysics Data System (ADS)

Saito, Koichiro; Tatsuma, Tetsu

2015-12-01

A transparent and colourless projection screen is fabricated by depositing a silver nanocube sub-monolayer on a titania thin film. Backward scattering of the silver nanocubes is enhanced by titania in the blue and red regions, to which human eyes are less sensitive. As a result, this screen, which is cost-effective even for large areas, allows projection of full colour images.A transparent and colourless projection screen is fabricated by depositing a silver nanocube sub-monolayer on a titania thin film. Backward scattering of the silver nanocubes is enhanced by titania in the blue and red regions, to which human eyes are less sensitive. As a result, this screen, which is cost-effective even for large areas, allows projection of full colour images. Electronic supplementary information (ESI) available: Preparation of Ag nanocubes, calculated values for a Ag nanocube on TiO2 (Tables S1 and S2). See DOI: 10.1039/c5nr06766a

Monolithic microcircuit techniques and processes

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1972-01-01

Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

"Nickel Nanoflowers" with Surface-Attached Fluoropolymer Networks by C,H Insertion for the Generation of Metallic Superhydrophobic Surfaces.

PubMed

Hönes, Roland; Rühe, Jürgen

2018-05-08

Metallic superhydrophobic surfaces (SHSs) combine the attractive properties of metals, such as ductility, hardness, and conductivity, with the favorable wetting properties of nanostructured surfaces. Moreover, they promise additional benefits with respect to corrosion protection. For the modification of the intrinsically polar and hydrophilic surfaces of metals, a new method has been developed to deposit a long-term stable, highly hydrophobic coating, using nanostructured Ni surfaces as an example. Such substrates were chosen because the deposition of a thin Ni layer is a common choice for enhancing corrosion resistance of other metals. As the hydrophobic coating, we propose a thin film of an extremely hydrophobic fluoropolymer network. To form this network, a thin layer of a fluoropolymer precursor is deposited on the Ni substrate which includes a comonomer that is capable of C,H insertion cross-linking (CHic). Upon UV irradiation or heating, the cross-linker units become activated and the thin glassy film of the precursor is transformed into a polymer network that coats the surface conformally and permanently, as shown by extensive extraction experiments. To achieve an even higher stability, the same precursor film can also be transformed into a chemically surface-attached network by depositing a self-assembled monolayer of an alkane phosphonic acid on the Ni before coating with the precursor. During cross-linking, by the same chemical process, the growing polymer network will simultaneously attach to the alkane phosphonic acid layer at the surface of the metal. This strategy has been used to turn fractal Ni "nanoflower" surfaces grown by anisotropic electroplating into SHSs. The wetting characteristics of the obtained nanostructured metallic surfaces are studied. Additionally, the corrosion protection effect and the significant mechanical durability are demonstrated.

Combinatorial investigation of rare-earth free permanent magnets

NASA Astrophysics Data System (ADS)

Fackler, Sean Wu

The combinatorial high throughput method allows one to rapidly study a large number of samples with systematically changing parameters. We apply this method to study Fe-Co-V alloys as alternatives to rare-earth permanent magnets. Rare-earth permanent magnets derive their unmatched magnetic properties from the hybridization of Fe and Co with the f-orbitals of rare-earth elements, which have strong spin-orbit coupling. It is predicted that Fe and Co may also have strong hybridization with 4d and 5d refractory transition metals with strong spin-orbit coupling. Refractory transition metals like V also have the desirable property of high temperature stability, which is important for permanent magnet applications in traction motors. In this work, we focus on the role of crystal structure, composition, and secondary phases in the origin of competitive permanent magnetic properties of a particular Fe-Co-V alloy. Fe38Co52V10, compositions are known as Vicalloys. Fe-CoV composition spreads were sputtered onto three-inch silicon wafers and patterned into discrete sample pads forming a combinatorial library. We employed highthroughput screening methods using synchrotron X-rays, wavelength dispersive spectroscopy, and magneto-optical Kerr effect (MOKE) to rapidly screen crystal structure, composition, and magnetic properties, respectively. We found that in-plane magnetic coercive fields of our Vicalloy thin films agree with known bulk values (300 G), but found a remarkable eight times increase of the out-of-plane coercive fields (˜2,500 G). To explain this, we measured the switching fields between in-plane and out-of-plane thin film directions which revealed that the Kondorsky model of 180° domain wall reversal was responsible for Vicalloy's enhanced out-of-plane coercive field and possibly its permanent magnetic properties. The Kondorsky model suggests that domain-wall pinning is the origin of Vicalloy's permanent magnetic properties, in contrast to strain, shape, or crystalline anisotropy mechanisms suggested in the literature. We also studied the thickness dependence of an Fe70Co30- V thin film library to consider the unique effects of our thin film libraries which are not found in bulk samples. We present results of data mining of synchrotron X-ray diffraction data using non-negative matrix factorization (NMF). NMF can automatically identify pure crystal phases that make up an unknown phase mixture. We found a strong correlation between magnetic properties and crystal phase quantity using this valuable visualization. In addition to the combinatorial study, this dissertation includes a study of strain controlled properties of magnetic thin films for future applications in random access memories. We investigated the local coupling between dense magnetic stripe domains in transcritical Permalloy (tPy) thin films and ferroelectric domains of BaTiO3 single crystals in a tPy/BaTiO3 heterostructure. Two distinct changes in the magnetic stripe domains of tPy were observed from the magnetic force microscopy images after cooling the heterostructure from above the ferroelectric Curie temperature of BaTiO3 (120°C) to room temperature. First, an abrupt break in the magnetic stripe domain direction was found at the ferroelectric a-c-domain boundaries due to an induced change in in-plane magnetic anisotropy. Second, the magnetic stripe domain period increased when coupled to a ferroelectric a-domain due to a change in out-of-plane magnetic anisotropy. Micromagnetic simulations reveal that local magnetic anisotropy energy from inverse magnetostriction is conserved between in-plane and out-of-plane components.

Thin film photovoltaic device

DOEpatents

Catalano, A.W.; Bhushan, M.

1982-08-03

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Method and composition for testing for the presence of an alkali metal

DOEpatents

Guon, Jerold

1981-01-01

A method and composition for detecting the presence of an alkali metal on the surface of a body such as a metal plate, tank, pipe or the like is provided. The method comprises contacting the surface with a thin film of a liquid composition comprising a light-colored pigment, an acid-base indicator, and a nonionic wetting agent dispersed in a liquid carrier comprising a minor amount of water and a major amount of an organic solvent selected from the group consisting of the lower aliphatic alcohols, ketones and ethers. Any alkali metal present on the surface in elemental form or as an alkali metal hydroxide or alkali metal carbonate will react with the acid-base indicator to produce a contrasting color change in the thin film, which is readily discernible by visual observation or automatic techniques.

Summary Abstract: Growth and Alloying of Pd Films on Mo(110) Surfaces

NASA Technical Reports Server (NTRS)

Park, Ch. E.; Poppa, H.; Bauer, E.

1985-01-01

Alloying in small metal particles and in very thin films has recently received considerable attention. In the past it has been generally assumed that alloying is insignificant up to temperatures. Thus many epitaxy experiments of metals on metals with complete miscibility were performed at temperatures between 200 and 400 C and analyzed assuming no alloying. In particular, alloying was not suspected if the film material was not soluble in the substrate. In the present study, which was stimulated by annealing-induced CO adsorption anomalies on thin film surfaces, it has become evident that low temperature alloying can occur in thin films on a metal substrate which is refractory and has very strong interatomic bonds (as evidenced by a high sublimation energy) provided that the substrate is soluble in the film material. A good example of such a film-substrate combination is Pd on Mo. The solubility of Pd in Mo is very at temperatures below 1000 K but Pd can dissolve slightly more than 40 at. % Mo even at low temperatures.

Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

PubMed

Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

2015-05-01

Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

21 CFR 892.1960 - Radiographic intensifying screen.

Code of Federal Regulations, 2011 CFR

2011-04-01

.... (a) Identification. A radiographic intensifying screen is a device that is a thin radiolucent sheet... for medical purposes to expose radiographic film. (b) Classification. Class I (general controls). The...

DEVELOPMENT OF THE METAL FINISHING FACILITY RISK SCREENING TOOL (MFFRST)

EPA Science Inventory

Recently the US EPA completed the development of the first version of the Metal Finishing Facility Risk Screening Tool (MFFRST) and has made this product available to the general public. MFFRST calculates the air emissions from a metal plating line and determines the risk to bot...

PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

NASA Astrophysics Data System (ADS)

2014-11-01

The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof.DSc Kostadinka Gesheva, Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences (CL SENES-BAS) - Chairperson Assoc. Prof. Dr Anna Szekeres - Institute of Solid State Physics- BAS Assoc. Prof Dr. Tatyana Ivanova - CL SENES -BAS Assist. Prof. Radostina Kamburova - ISSP-BAS

Recent applications of liquid metals featuring nanoscale surface oxides

NASA Astrophysics Data System (ADS)

Neumann, Taylor V.; Dickey, Michael D.

2016-05-01

This proceeding describes recent efforts from our group to control the shape and actuation of liquid metal. The liquid metal is an alloy of gallium and indium which is non-toxic, has negligible vapor pressure, and develops a thin, passivating surface oxide layer. The surface oxide allows the liquid metal to be patterned and shaped into structures that do not minimize interfacial energy. The surface oxide can be selectively removed by changes in pH or by applying a voltage. The surface oxide allows the liquid metal to be 3D printed to form free-standing structures. It also allows for the liquid metal to be injected into microfluidic channels and to maintain its shape within the channels. The selective removal of the oxide results in drastic changes in surface tension that can be used to control the flow behavior of the liquid metal. The metal can also wet thin, solid films of metal that accelerates droplets of the liquid along the metal traces .Here we discuss the properties and applications of liquid metal to make soft, reconfigurable electronics.

Carbon Nanotube Thin-Film Antennas.

PubMed

Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

2016-08-17

Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

Handshake electron transfer from hydrogen Rydberg atoms incident at a series of metallic thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibbard, J. A.; Softley, T. P.

2016-06-21

Thin metallic films have a 1D quantum well along the surface normal direction, which yields particle-in-a-box style electronic quantum states. However the quantum well is not infinitely deep and the wavefunctions of these states penetrate outside the surface where the electron is bound by its own image-charge attraction. Therefore a series of discrete, vacant states reach out from the thin film into the vacuum increasing the probability of electron transfer from an external atom or molecule to the thin film, especially for the resonant case where the quantum well energy matches that of the atom. We show that “handshake” electronmore » transfer from a highly excited Rydberg atom to these thin-film states is experimentally measurable. Thicker films have a wider 1D box, changing the energetic distribution and image-state contribution to the thin film wavefunctions, resulting in more resonances. Calculations successfully predict the number of resonances and the nature of the thin-film wavefunctions for a given film thickness.« less

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

PubMed Central

Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

2014-01-01

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

LA-ICP-MS Study of Trace Elements in the Chanuskij Metal

NASA Technical Reports Server (NTRS)

Petaev, Michail I.

2005-01-01

This progress report covers work done during the second year of the 3-year proposal. During this year we resolved many issues relevant to the analytical technique developed by us for measuring trace elements in meteoritic metals. This technique was used to measure concentrations of Fe, Ni, Co, Cr, Cu, Ga, Ge, As, Mo, Ru, Rh, Pd, Sb, W, Re, Os, Ir, Pt, and Au in eight large (120 - 160 microns) metal grains from both "igneous" and "metamorphic" lithologies of the Chanuskij silicate inclusions. The first application of OUT technique to metal grains from thin sections showed some limitations. Small thickness of metal grains in the thin section limited the signal to 3-4 time-slices instead of 10- 1 1 ones in polished sections of iron meteorites studied before.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure.

PubMed

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-15

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Investigating Polymer–Metal Interfaces by Grazing Incidence Small-Angle X-Ray Scattering from Gradients to Real-Time Studies

PubMed Central

Schwartzkopf, Matthias; Roth, Stephan V.

2016-01-01

Tailoring the polymer–metal interface is crucial for advanced material design. Vacuum deposition methods for metal layer coating are widely used in industry and research. They allow for installing a variety of nanostructures, often making use of the selective interaction of the metal atoms with the underlying polymer thin film. The polymer thin film may eventually be nanostructured, too, in order to create a hierarchy in length scales. Grazing incidence X-ray scattering is an advanced method to characterize and investigate polymer–metal interfaces. Being non-destructive and yielding statistically relevant results, it allows for deducing the detailed polymer–metal interaction. We review the use of grazing incidence X-ray scattering to elucidate the polymer–metal interface, making use of the modern synchrotron radiation facilities, allowing for very local studies via in situ (so-called “stop-sputter”) experiments as well as studies observing the nanostructured metal nanoparticle layer growth in real time. PMID:28335367

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure

NASA Astrophysics Data System (ADS)

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-01

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

High-throughput screening of PLGA thin films utilizing hydrophobic fluorescent dyes for hydrophobic drug compounds.

PubMed

Steele, Terry W J; Huang, Charlotte L; Kumar, Saranya; Widjaja, Effendi; Chiang Boey, Freddy Yin; Loo, Joachim S C; Venkatraman, Subbu S

2011-10-01

Hydrophobic, antirestenotic drugs such as paclitaxel (PCTX) and rapamycin are often incorporated into thin film coatings for local delivery using implantable medical devices and polymers such as drug-eluting stents and balloons. Selecting the optimum coating formulation through screening the release profile of these drugs in thin films is time consuming and labor intensive. We describe here a high-throughput assay utilizing three model hydrophobic fluorescent compounds: fluorescein diacetate (FDAc), coumarin-6, and rhodamine 6G that were incorporated into poly(d,l-lactide-co-glycolide) (PLGA) and PLGA-polyethylene glycol films. Raman microscopy determined the hydrophobic fluorescent dye distribution within the PLGA thin films in comparison with that of PCTX. Their subsequent release was screened in a high-throughput assay and directly compared with HPLC quantification of PCTX release. It was observed that PCTX controlled-release kinetics could be mimicked by a hydrophobic dye that had similar octanol-water partition coefficient values and homogeneous dissolution in a PLGA matrix as the drug. In particular, FDAc was found to be the optimal hydrophobic dye at modeling the burst release as well as the total amount of PCTX released over a period of 30 days. Copyright © 2011 Wiley-Liss, Inc.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

NASA Astrophysics Data System (ADS)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Thickness and microstructure effects in the optical and electrical properties of silver thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, H. F.; Liu, Z. T.; Fan, C. C.

2016-08-15

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentionsmore » need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.« less

Spatial charge inhomogeneity and defect states in topological Dirac semimetal thin films of Na3Bi

PubMed Central

Edmonds, Mark T.; Collins, James L.; Hellerstedt, Jack; Yudhistira, Indra; Gomes, Lídia C.; Rodrigues, João N. B.; Adam, Shaffique; Fuhrer, Michael S.

2017-01-01

Topological Dirac semimetals (TDSs) are three-dimensional analogs of graphene, with carriers behaving like massless Dirac fermions in three dimensions. In graphene, substrate disorder drives fluctuations in Fermi energy, necessitating construction of heterostructures of graphene and hexagonal boron nitride (h-BN) to minimize the fluctuations. Three-dimensional TDSs obviate the substrate and should show reduced EF fluctuations due to better metallic screening and higher dielectric constants. We map the potential fluctuations in TDS Na3Bi using a scanning tunneling microscope. The rms potential fluctuations are significantly smaller than the thermal energy room temperature (ΔEF,rms = 4 to 6 meV = 40 to 70 K) and comparable to the highest-quality graphene on h-BN. Surface Na vacancies produce a novel resonance close to the Dirac point with surprisingly large spatial extent and provide a unique way to tune the surface density of states in a TDS thin-film material. Sparse defect clusters show bound states whose occupation may be changed by applying a bias to the scanning tunneling microscope tip, offering an opportunity to study a quantum dot connected to a TDS reservoir. PMID:29291249

Bragg projection ptychography on niobium phase domain

DOE PAGES

Burdet, Nicolas; Shi, Xiaowen; Huang, Xiaojing; ...

2016-08-10

Here, we demonstrate that the highly sensitive phase-contrast properties of Bragg coherent diffraction measurements combined with the translational diversity of ptychography can provide a Bragg “dark field” imaging method capable of revealing the finger print of domain structure in metallic thin films. Experimental diffraction data was taken from a epitaxially grown niobium metallic thin film on sapphire; and analyzed with the help of a careful combination of implemented refinement mechanisms.

Precision Rolled-Ink Nano-Technology; Development of a Direct Write Technique for the Fabrication of Thin Films and Conductive Elements

DTIC Science & Technology

2012-10-01

Fabrication of Thin Films and Conductive Elements Larry R. Holmes, Jr. Weapons and Materials Research Directorate, ARL...polymer composites, glass, metals, ceramics , and others. Development of the PRINT system and future work are discussed. 15. SUBJECT TERMS direct write...7 Figure 5. PRINT deposition on (left) polished aluminum sheet metal, and (right) aluminum oxide ceramic tile

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

NASA Technical Reports Server (NTRS)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Nanoporous Block Polymer Thin Films Functionalized with Bio-Inspired Ligands for the Efficient Capture of Heavy Metal Ions from Water.

PubMed

Weidman, Jacob L; Mulvenna, Ryan A; Boudouris, Bryan W; Phillip, William A

2017-06-07

Heavy metal contamination of water supplies poses a serious threat to public health, prompting the development of novel and sustainable treatment technologies. One promising approach is to molecularly engineer the chemical affinity of a material for the targeted removal of specific molecules from solution. In this work, nanoporous polymer thin films generated from tailor-made block polymers were functionalized with the bio-inspired moieties glutathione and cysteamine for the removal of heavy metal ions, including lead and cadmium, from aqueous solutions. In a single equilibrium stage, the films achieved removal rates of the ions in excess of 95%, which was consistent with predictions based on the engineered material properties. In a flow-through configuration, the thin films achieved an even greater removal rate of the metal ions. Furthermore, in mixed ion solutions the capacity of the thin films, and corresponding removal rates, did not demonstrate any reduction due to competitive adsorption effects. After such experiments the material was repeatedly regenerated quickly with no observed loss in capacity. Thus, these membranes provide a sustainable platform for the efficient purification of lead- and cadmium-contaminated water sources to safe levels. Moreover, their straightforward chemical modifications suggest that they could be engineered to treat sources containing other recalcitrant environmental contaminants as well.

Thin lead sheets in the decorative features in Pavia Charterhouse.

PubMed

Colombo, Chiara; Realini, Marco; Sansonetti, Antonio; Rampazzi, Laura; Casadio, Francesca

2006-01-01

The facade of the church of the Pavia Charterhouse, built at the end of the 15th century, shows outstanding decorative features made of different stone materials, such as marbles, breccias and sandstones. Magnificent ornamental elements are made of thin lead sheets, and some marble slabs are inlaid with them. Metal elements are shaped in complex geometric and phytomorphic design, to form a Greek fret in black contrasting with the white Carrara marble. Lead pins were fixed to the back of the thin lead sheets with the aim of attaching the metal elements to the marble; in so doing the pins and the lead sheets constitute a single piece of metal. In some areas, lead elements have been lost, and they have been substituted with a black plaster, matching the colour of the metal. To the authors' knowledge, this kind of decorative technique is rare, and confirms the refinement of Renaissance Lombard architecture. This work reports on the results of an extensive survey of the white, orange and yellowish layers, which are present on the external surface of the lead. The thin lead sheets have been characterized and their state of conservation has been studied with the aid of Optical Microscopy, SEM-EDS, FTIR and Raman analyses. Lead sulphate, lead carbonates and oxides have been identified as decay products.

Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

DOEpatents

Bhattacharya, Raghu Nath

2016-01-12

A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

The half-metallicity of Co2FeGe full Heusler alloy in (001) thin film: First principles study

NASA Astrophysics Data System (ADS)

Hyun, Jung-Min; Kim, Miyoung

2018-01-01

The electronic and magnetic properties of the Co2FeGe full Heusler alloy in (001) thin film are investigated using the first-principles electronic structure calculations within the density functional theory. We employ various exchange correlation functionals including the local density approximation (LDA), the generalized gradient approximation (GGA), and the additional + U corrections for strong on-site Coulomb interaction of transition metal 3d states, aiming to examine the correlation effect on the electronic structures which determine the spin gap and thus the half-metallicity. Our results reveal that the Co2FeGe thin film is metallic in both LDA and GGA, while the + U correction opens up the spin gap for spin minority channel in GGA+ U but not in LDA+U in contrast to its bulk alloy which is predicted to be half-metallic in both LDA+ U and GGA+ U approaches with total spin magnetic moment of 6 μ B . It is found that the surface states developed around the Fermi level and the enhanced 3d e g - t 2 g band splitting for the spin minority channel due to the correlation effect play critical roles to determine the emergence of the half-metallicity.

Screening of sunflower cultivars for metal phytoextraction in a contaminated field prior to mutagenesis.

PubMed

Nehnevajova, Erika; Herzig, Rolf; Federer, Guido; Erismann, Karl-Hans; Schwitzguébel, Jean-Paul

2005-01-01

Sunflower can be used for the remediation of metal-contaminated soils. Its high biomass production makes this plant species interestingfor phytoextraction and using sunflower oil for a technical purpose may improve the economic balance of phytoremediation. The aim of the present field study was to screen 15 commercial cultivars of Helianthus annuus L. grown on metal-contaminated soil, to find out the variety with the highest metal extraction, which can be further improved by mutation or in vitro breeding procedures. Two different fertilizers (ammonium sulphate and ammonium nitrate) were also used to enhance the bioavailability of metals in soil Highly significant differences were observed within tested varieties for metal accumulation and extraction efficiency. Furthermore, ammonium nitrate increased cadmium extraction, whereas ammonium sulphate enhanced zinc and lead uptake in most tested cultivars. In this field-based sunflower screening, we found enhanced cumulative Cd, Zn, and Pb extraction efficiency by a factor 4.4 for Salut cultivar. We therefore emphasize that prior to any classical breeding or genetic engineering enhancing metal uptake potential, a careful screening of various genotypes should be done to select the cultivar with the naturally highest metal uptake and to start the genetic improvement with the best available plant material.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Thin-metal lined PRD 49-III composite vessels. [evaluation of pressure vessels for burst strength and fatigue performance

NASA Technical Reports Server (NTRS)

Hoggatt, J. T.

1974-01-01

Filament wound pressure vessels of various configurations were evaluated for burst strength and fatigue performance. The dimensions and characteristics of the vessels are described. The types of tests conducted are explained. It was determined that all vessels leaked in a relatively few cycles (20 to 60 cycles) with failure occurring in all cases in the metallic liner. The thin liner would de-bond from the composite and buckling took place during depressurization. No composite failures or indications of impeding composite failures were obtained in the metal-lined vessels.

Generation of metallic plasmon nanostructures in a thin transparent photosensitive copper oxide film by femtosecond thermochemical decomposition

NASA Astrophysics Data System (ADS)

Danilov, P. A.; Zayarny, D. A.; Ionin, A. A.; Kudryashov, S. I.; Litovko, E. P.; Mel'nik, N. N.; Rudenko, A. A.; Saraeva, I. N.; Umanskaya, S. P.; Khmelnitskii, R. A.

2017-09-01

Irradiation of optically transparent copper (I) oxide film covering a glass substrate with a tightly focused femtosecond laser pulses in the pre-ablation regime leads to film reduction to a metallic colloidal state via a single-photon absorption and its subsequent thermochemical decomposition. This effect was demonstrated by the corresponding measurement of the extinction spectrum in visible spectral range. The laser-induced formation of metallic copper nanoparticles in the focal region inside the bulk oxide film allows direct recording of individual thin-film plasmon nanostructures and optical-range metasurfaces.

Use of screenings to produce HMA mixtures

DOT National Transportation Integrated Search

2002-10-01

Thin-lift hot mix asphalt (HMA) layers are utilized in almost every maintenance and rehabilitation application. These mix types require smaller maximum particle sizes than most conventional HMA surface layers. Although the primary functions of thin-l...

High pressure mechanical seal

NASA Technical Reports Server (NTRS)

Babel, Henry W. (Inventor); Fuson, Phillip L. (Inventor); Chickles, Colin D. (Inventor); Jones, Cherie A. (Inventor); Anderson, Raymond H. (Inventor)

1995-01-01

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting, prior to swaging the fitting onto the tube. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, nickel, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After swaging, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as meaured using the Helium leak test.

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.

Silica coatings formed on noble dental casting alloy by the sol-gel dipping process.

PubMed

Yoshida, K; Tanagawa, M; Kamada, K; Hatada, R; Baba, K; Inoi, T; Atsuta, M

1999-08-01

The sol-gel dipping process, in which liquid silicon alkoxide is transformed into the solid silicon-oxygen network, can produce a thin film coating of silica (SiO2). The features of this method are high homogeneity and purity of the thin SiO2 film and a low sinter temperature, which are important in preparation of coating films that can protect from metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface characteristics of the dental casting silver-palladium-copper-gold (Ag-Pd-Cu-Au) alloy coated with a thin SiO2 film by the sol-gel dipping process. The SiO2 film bonded strongly (over 40 MPa) to Ti-implanted Ag-Pd-Cu-Au alloy substrate as demonstrated by a pull test. Hydrophobilization of Ti-implanted/SiO2-coated surfaces resulted in a significant increase of the contact angle of water (80.5 degrees) compared with that of the noncoated alloy specimens (59.3 degrees). Ti-implanted/SiO2-coated specimens showed the release of many fewer metallic ions (192 ppb/cm2) from the substrate than did noncoated specimens (2,089 ppb/cm2). The formation of a thin SiO2 film by the sol-gel dipping process on the surface of Ti-implanted Ag-Pd-Cu-Au alloy after casting clinically may be useful for minimizing the possibilities of the accumulation of dental plaque and metal allergies caused by intraoral metal restorations.

Method and making group IIB metal - telluride films and solar cells

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1990-08-21

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Electrostatic interactions between ions near Thomas-Fermi substrates and the surface energy of ionic crystal at imperfect metals

PubMed Central

Kaiser, V.; Comtet, J.; Niguès, A.; Siria, A.; Coasne, B.; Bocquet, L.

2017-01-01

The electrostatic interaction between two charged particles is strongly modified in the vicinity of a metal. This situation is usually accounted for by the celebrated image charges approach, which was further extended to account for the electronic screening properties of the metal at the level of the Thomas-Fermi description. In this paper we build upon the approach by [Kornyshev et al. Zh. Eksp. Teor. Fiz., 78(3):1008–1019, 1980] and successive works to calculate the 1-body and 2-body electrostatic energy of ions near a metal in terms of the Thomas-Fermi screening length. We propose workable approximations suitable for molecular simulations of ionic systems close to metallic walls. Furthermore, we use this framework to calculate analytically the electrostatic contribution to the surface energy of a one dimensional crystal at a metallic wall and its dependence on the Thomas-Fermi screening length. These calculations provide a simple interpretation for the surface energy in terms of image charges, which allow for an estimate of interfacial properties in more complex situations of a disordered ionic liquid close to a metal surface. A counterintuitive outcome is that electronic screening, as characterized by a molecular Thomas-Fermi length ℓTF, profoundly affects the wetting of ionic systems close to a metal, in line with the recent experimental observation of capillary freezing of ionic liquids in metallic confinement. PMID:28436506

Micro-Machined Thin Film Sensor Arrays For The Detection Of H2, Containing Gases, And Method Of Making And Using The Same.

DOEpatents

DiMeo, Jr., Frank; Baum, Thomas H.

2003-07-22

The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Modifying ultrafast optical response of sputtered VOX nanostructures in a broad spectral range by altering post annealing atmosphere

NASA Astrophysics Data System (ADS)

Kürüm, U.; Yaglioglu, H. G.; Küçüköz, B.; Oksuzoglu, R. M.; Yıldırım, M.; Yağcı, A. M.; Yavru, C.; Özgün, S.; Tıraş, T.; Elmali, A.

2015-01-01

Nanostructured VOX thin films were grown in a dc magnetron sputter system under two different Ar:O2 gas flow ratios. The films were annealed under vacuum and various ratios of O2/N2 atmospheres. The insulator-to-metal transition properties of the thin films were investigated by temperature dependent resistance measurement. Photo induced insulator-to-metal transition properties were investigated by Z-scan and ultrafast white light continuum pump probe spectroscopy measurements. Experiments showed that not only insulator-to-metal transition, but also wavelength dependence (from NIR to VIS) and time scale (from ns to ultrafast) of nonlinear optical response of the VOX thin films could be fine tuned by carefully adjusting post annealing atmosphere despite different initial oxygen content in the production. Fabricated VO2 thin films showed reflection change in the visible region due to photo induced phase transition. The results have general implications for easy and more effective fabrication of the nanostructured oxide systems with controllable electrical, optical, and ultrafast optical responses.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

PubMed Central

Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

2014-01-01

A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

Science and Technology Facility | Photovoltaic Research | NREL

Science.gov Websites

- and back-contact schemes for advanced thin-film PV solar cells. Contact materials include metals Science and Technology Facility Science and Technology Facility Solar cell, thin-film, and Development Laboratory Research in thin-film PV is accomplished in this lab with techniques used for

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

Since their discovery two decades ago, single walled carbon nanotubes (SWNT) have created an expansion of scientific interest that continues to grow to this day. This is due to a good balance between presence of bandgap, chemical reactivity and electrical conductivity. By interconnection of the individual nanotubes or modulation of the SWNT's electronic states, electronic devices made with thin films can become candidates for next generation electronics in areas such as memory devices, spintronics, energy storage devices and optoelectronics. My thesis focuses on the modulation of the electronic structure, optical properties and transport characteristics of single walled carbon nanotube films and their application in electronic and optoelectronic devices. Individual SWNTs have exceptional electronic properties but are difficult to manipulate for use in electronic devices. Alternatively, devices utilize SWNTs in thin films. SWNT thin films, however, may lose some of the properties due to Schottky barriers and electron hoping between metal-nanotube junctions and individual nanotubes within the film, respectively. Until recently, there has been no known route to preserve both conjugation and electrical properties. Prior attempts using covalent chemical functionalization led to re-hybridization of sp2 carbon centers to sp3, which introduces defects into the material and results in a decrease of electron mobility. As was discovered in Haddon Research group, depositing Group VI transition metals via atomic vapor deposition into SWNT films results in formation of bis-hexahapto covalent bonds. This (eta6-SWNT) Metal (eta6-SWNT) type of bonding was found to interconnect the delocalized systems without inducing structural re-hybridization and results in a decrease of the thin films electrical resistance. Recently, with the assistance of electron beam deposition, we deposited atomic metal vapor of various lanthanide metals on the SWNT thin films with the idea that they would also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Method for forming glass-to-metal seals

DOEpatents

Kramer, Daniel P.; Massey, Richard T.

1986-01-01

A method for forming a glass-to-metal seal in which the glass has a higher melting point than the metal. The molten glass is vacuum injection molded onto the metal, thus melting a very thin layer of the surface of the metal long enough to form a seal, but not long enough to cause a distortion in the shape of the metal component.

Erosion of mylar and protection by thin metal films

NASA Technical Reports Server (NTRS)

Fraundorf, P.; Lindstrom, D.; Sandford, S.; Swan, P.; Walker, R.; Zinner, E.; Pailer, N.

1983-01-01

Mylar strips, 2.5 microns thick, uncoated and coated with 50A, 100A and 200A of Al, Pd, and Au/Pd were exposed on STS-5 in order to measure the erosion of mylar and to test means of protecting thin plastic foils commonly used for space experiments in low earth orbit. Analysis by optical microscopy, SEM and STEM investigation, EDX measurements, FTIR spectroscopy and weight loss measurements showed that while up to 75 percent of the uncoated mylar was eroded during exposure, thin coatings of the above metals can protect mylar for integrated oxygen-fluxes of at least 10 to the 21st atoms/sq cm.

Reflective Coating for Lightweight X-Ray Optics

NASA Technical Reports Server (NTRS)

Chan, Kai-Wing; Zhang, William W.; Windt, David; Hong, Mao-Ling; Saha, Timo; McClelland, Ryan; Sharpe, Marton; Dwivedi, Vivek H.

2012-01-01

X-ray reflective coating for next generation's lightweight, high resolution, optics for astronomy requires thin-film deposition that is precisely fine-tuned so that it will not distort the thin sub-mm substrates. Film of very low stress is required. Alternatively, mirror distortion can be cancelled by precisely balancing the deformation from multiple films. We will present results on metallic film deposition for the lightweight optics under development. These efforts include: low-stress deposition by magnetron sputtering and atomic layer deposition of the metals, balancing of gross deformation with two-layer depositions of opposite stresses and with depositions on both sides of the thin mirrors.

In-Plane Impedance Spectroscopy measurements in Vanadium Dioxide thin films

NASA Astrophysics Data System (ADS)

Ramirez, Juan; Patino, Edgar; Schmidt, Rainer; Sharoni, Amos; Gomez, Maria; Schuller, Ivan

2012-02-01

In plane Impedance Spectroscopy measurements have been done in Vanadium Dioxide thin films in the range of 100 Hz to 1 MHz. Our measurements allows distinguishing between the resistive and capacitive response of the Vanadium Dioxide films across the metal-insulator transition. A non ideal RC behavior was found in our thin films from room temperature up to 334 K. Around the MIT, an increase of the total capacitance is observed. A capacitor-network model is able to reproduce the capacitance changes across the MIT. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

Patents -- Ivar Giaever (1976)

Science.gov Websites

biological particles, particularly proteins. Such devices comprise a non-transparent surface of metal (solid metal or a non-transparent coating of metal on some different substrate) covered with a thin transparent unaided eye, when the non-transparent surface metal reflects light relatively poorly and is at least

Soft metal plating enables hard metal seal to operate successfully in low temperature, high pressure environment

NASA Technical Reports Server (NTRS)

Lamvermeyer, D. J.

1967-01-01

Soft metal plating of hard metal lip seal enables successful operation of seal in a cryogenic fluid line under high pressure. The seal is coated with a thin film of 24 carat gold on the lip area to provide antigall and seal properties.

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

NASA Astrophysics Data System (ADS)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2017-08-01

Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

PubMed

Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

2009-01-01

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

Magnetic record support

NASA Technical Reports Server (NTRS)

Nakayama, M.; Morita, H.; Tokuoka, Y.; Izumi, T.; Fukuda, K.; Kubota, Y.

1984-01-01

The magnetic layer of a magnetic record support is coated with a thin film of a polymer with a siloxane bond. The magnetic layer consists of a thin film obtained by vacuum metallization, cathode sputtering or dispersion of a ferromagnetic metal powder in a binder. The polymer with a siloxane bond is produced by the polymerization of an organic silicon compound which inherently contains or is able to form this bond. Polymerization is preferably performed by plasma polymerization.

Invited Paper Thin Film Technology In Design And Production Of Optical Systems

NASA Astrophysics Data System (ADS)

Guenther, K. H.; Menningen, R.; Burke, C. A.

1983-10-01

Basic optical properties of dielectric thin films for interference applications and of metallic optical coatings are reviewed. Some design considerations of how to use thin films best in optical systems are given, and some aspects of thin film production technology relevant to the optical designer and the optician are addressed. The necessity of proper specifications, inclusive of test methods, is emphasized.

Design and evaluation of thin metal surface insulation for hypersonic flight

NASA Technical Reports Server (NTRS)

Miller, R. C.; Petach, A. M.

1976-01-01

An all-metal insulation was studied as a thermal protection system for hypersonic vehicles. Key program goals included fabricating the insulation in thin packages which are optimized for high temperature insulation of an actively cooled aluminum structure, and the use of state-of-the-art alloys. The insulation was fabricated from 300 series stainless steel in thicknesses of 0.8 to 12 mm. The outer, 0.127 mm thick, skin was textured to accommodate thermal expansion and oxidized to increase emittance. The thin insulating package was achieved using an insulation concept consisting of foil radiation shields spaced within the package, and conical foil supports to carry loads from the skin and maintain package dimensions. Samples of the metal-insulation were tested to evaluate thermal insulation capability, rain and sand erosion resistance, high temperature oxidation resistance, applied load capability, and high temperature emittance.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

NASA Astrophysics Data System (ADS)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

NASA Astrophysics Data System (ADS)

Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

2013-03-01

A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

Design and fabrication of light weight current collectors for direct methanol fuel cells using the micro-electro mechanical system technique

NASA Astrophysics Data System (ADS)

Sung, Min-Feng; Kuan, Yean-Der; Chen, Bing-Xian; Lee, Shi-Min

The direct methanol fuel cell (DMFC) is suitable for portable applications. Therefore, a light weight and small size is desirable. The main objective of this paper is to design and fabricate a light weight current collector for DMFC usage. The light weight current collector mainly consists of a substrate with two thin film metal layers. The substrate of the current collector is an FR4 epoxy plate. The thin film metal layers are accomplished by the thermo coater technique to coat metal powders onto the substrate surfaces. The developed light weight current collectors are further assembled to a single cell DMFC test fixture to measure the cell performance. The results show that the proposed current collectors could even be applied to DMFCs because they are light, thin and low cost and have potential for mass production.

Operation of Thin-Film Electrolyte Metal-Supported Solid Oxide Fuel Cells in Lightweight and Stationary Stacks: Material and Microstructural Aspects

PubMed Central

Roehrens, Daniel; Packbier, Ute; Fang, Qingping; Blum, Ludger; Sebold, Doris; Bram, Martin; Menzler, Norbert

2016-01-01

In this study we report on the development and operational data of a metal-supported solid oxide fuel cell with a thin film electrolyte under varying conditions. The metal-ceramic structure was developed for a mobile auxiliary power unit and offers power densities of 1 W/cm2 at 800 °C, as well as robustness under mechanical, thermal and chemical stresses. A dense and thin yttria-doped zirconia layer was applied to a nanoporous nickel/zirconia anode using a scalable adapted gas-flow sputter process, which allowed the homogeneous coating of areas up to 100 cm2. The cell performance is presented for single cells and for stack operation, both in lightweight and stationary stack designs. The results from short-term operation indicate that this cell technology may be a very suitable alternative for mobile applications. PMID:28773883

Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles

NASA Astrophysics Data System (ADS)

Woods, Keenan N.

Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing. Solution deposition has previously been dominated by sol-gel routes, which utilize organic ligands, additives, and/or solvents. However, sol-gel films are often porous and contain residual carbon impurities, which can negatively impact device properties. All-inorganic aqueous routes produce dense, ultrasmooth films without carbon impurities, but the mechanisms involved in converting aqueous precursors to metal oxides are virtually unexplored. Understanding these mechanisms and the parameters that influence them is critical for widespread use of aqueous approaches to prepare microelectronic components. Additionally, understanding (and controlling) density and composition inhomogeneities is important for optimizing electronic properties. An overview of deposition approaches and the challenges facing aqueous routes are presented in Chapter I. A summary of thin film characterization techniques central to this work is given in Chapter II. This dissertation contributes to the field of solution-phase deposition by focusing on three areas. First, an all-inorganic aqueous route to high-kappa metal oxide dielectrics is developed for two ternary systems. Chapters III and IV detail the film formation chemistry and film properties of lanthanum zirconium oxide (LZO) and zirconium aluminum oxide (ZAO), respectively. The functionality of these dielectrics as device components is also demonstrated. Second, the impact of steam annealing on the evolution of aqueous-derived films is reported. Chapter V demonstrates that steam annealing lowers processing temperatures by effectively reducing residual counterion content, improving film stability with respect to water absorption, and enhancing dielectric properties of LZO films. Third, density and composition inhomogeneities in aqueous-derived films are investigated. Chapters VI and VII examine density inhomogeneities in single- and multi-metal component thin films, respectively, and show that these density inhomogeneities are related to inhomogeneous metal component distributions. This dissertation includes previously published coauthored material.

Cervical specimens collected in liquid buffer are suitable for both cytologic screening and ancillary human papillomavirus testing.

PubMed

Sherman, M E; Schiffman, M H; Lorincz, A T; Herrero, R; Hutchinson, M L; Bratti, C; Zahniser, D; Morales, J; Hildesheim, A; Helgesen, K; Kelly, D; Alfaro, M; Mena, F; Balmaceda, I; Mango, L; Greenberg, M

1997-04-25

Several new techniques have been developed to improve the sensitivity of cervical carcinoma screening and reduce equivocal cytologic diagnoses referred to as atypical squamous cells of undetermined significance (ASCUS). This study evaluates the effectiveness of combining two newly introduced diagnostic techniques: preparation of thin-layer cytologic slides from ThinPrep liquid buffer and selected Hybrid Capture testing for human papillomavirus (HPV) DNA. Because HPV DNA detection has been strongly associated with the presence of a cervical carcinoma precursor ("squamous intraepithelial lesion," or SIL), HPV testing might be useful for identifying women with ASCUS who have an underlying SIL. Two hundred specimens demonstrating diverse cervical abnormalities were selected from a prospective population-based study of 9174 women conducted in Costa Rica. The entire cohort had been screened with conventional cervical smears; ThinPrep slides made from liquid buffer, PAPNET, a computerized slide reading system; and Cervicography. Patients with any abnormal screening test were referred for colposcopy, punch biopsy, and loop excision of cases with high grade cytologic abnormalities not explained by punch biopsy. For this investigation, the results of ThinPrep cytology and HPV testing alone and in combination were compared with the final diagnoses, with an emphasis on the detection of carcinoma and high grade SIL. The 200 subjects studied included 7 women with a final diagnosis of carcinoma, 44 with high grade SIL, 34 with low grade SIL, 51 with a variety of equivocal diagnoses, and 64 with normal diagnoses. A ThinPrep cytologic diagnosis of SIL or carcinoma was made in 39 (76%) of the 51 women with final diagnoses of high grade SIL or carcinoma. Hybrid Capture testing detected carcinoma-associated types of HPV DNA in 100% of women with carcinoma, 75% with high grade SIL, 62% with low grade SIL, 20% with equivocal final diagnoses, and 12% of normal women. If colposcopy referral had been limited to women with a ThinPrep diagnosis of SIL or a diagnosis of ASCUS associated with the detection of carcinoma-associated HPV DNA from the same vial, 100% of women with carcinoma and 80% with high grade SIL would have been examined. To achieve this high sensitivity in the entire population of 9174 women would have required the referral of about 7% of the population. The combined screening strategy would have performed marginally better than optimized conventional screening with referral of any abnormal cytology (ASCUS and above). A cervical carcinoma screening technique which uses a single sample for cytopathology and HPV testing to triage equivocal diagnoses may be promising if it proves to be cost-effective.

Metal Injection Molding of Thin-Walled Titanium Glasses Arms: A Case Study

NASA Astrophysics Data System (ADS)

Ye, Shulong; Mo, Wei; Lv, Yonghu; Li, Xia; Kwok, Chi Tat; Yu, Peng

2018-02-01

Commercially pure titanium (CP Ti) and Ti-6Al-4V arms for a new brand of augmented reality smart glasses, which are over 170 mm in length, with thin wall structures and extremely complex surfaces, have been successfully fabricated via metal injection molding. After sintering, both the metal injection-molded (MIMed) CP Ti and Ti-6Al-4V can reach relative densities of over 95% with an oxygen content 2200 ppm, thus imparting mechanical properties comparable to cast alloys. The ductility of the MIMed CP Ti and Ti-6Al-4V are about 15% and 8%, respectively. This is a good example of applying metal injection molding to mass production of precise Ti alloy parts with complicated shapes.

Single-step fabrication of thin-film linear variable bandpass filters based on metal-insulator-metal geometry.

PubMed

Williams, Calum; Rughoobur, Girish; Flewitt, Andrew J; Wilkinson, Timothy D

2016-11-10

A single-step fabrication method is presented for ultra-thin, linearly variable optical bandpass filters (LVBFs) based on a metal-insulator-metal arrangement using modified evaporation deposition techniques. This alternate process methodology offers reduced complexity and cost in comparison to conventional techniques for fabricating LVBFs. We are able to achieve linear variation of insulator thickness across a sample, by adjusting the geometrical parameters of a typical physical vapor deposition process. We demonstrate LVBFs with spectral selectivity from 400 to 850 nm based on Ag (25 nm) and MgF₂ (75-250 nm). Maximum spectral transmittance is measured at ∼70% with a Q-factor of ∼20.

Photoinduced metal-to-insulator transition in a manganite thin film.

PubMed

Takubo, N; Onishi, I; Takubo, K; Mizokawa, T; Miyano, K

2008-10-24

A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr_(0.55)(Ca_(0.75)Sr_(0.25))_(0.45)MnO3, near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode.

Chiral magnetic conductivity and surface states of Weyl semimetals in topological insulator ultra-thin film multilayer.

PubMed

Owerre, S A

2016-06-15

We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.

Parasitic corrosion resistant anode for use in metal/air or metal/O.sub.2 cells

DOEpatents

Joy, Richard W.; Smith, David F.

1983-01-01

A consumable metal anode which is used in refuelable electrochemical cells and wherein at least a peripheral edge portion of the anode is protected against a corrosive alkaline environment of the cell by the application of a thin metal coating, the coating being formed of metals such as nickel, silver, and gold.

Optical resonance analysis of reflected long period fiber gratings with metal film overlay

NASA Astrophysics Data System (ADS)

Zhang, Guiju; Cao, Bing; Wang, Chinua; Zhao, Minfu

2008-11-01

We present the experimental results of a novel single-ended reflecting surface plasma resonance (SPR) based long period fiber grating (LPFG) sensor. A long period fiber grating sensing device is properly designed and fabricated with a pulsed CO2 laser writing system. Different nm-thick thin metal films are deposited on the fiber cladding and the fiber end facet for the excitation of surface plasma waves (SPWs) and the reflection of the transmission spectrum of the LPFG with doubled interaction between metal-dielectric interfaces of the fiber to enhance the SPW of the all-fiber SPR-LPFG sensing system. Different thin metal films with different thicknesses are investigated. The effect of the excited SPW transmission along the fiber cladding-metal interface with silver and aluminum films is observed. It is found that different thicknesses of the metal overlay show different resonant behaviors in terms of resonance peak situation, bandwidth and energy loss. Within a certain range, thinner metal film shows narrower bandwidth and deeper peak loss.

Polarized Optical Scattering Measurements of Metallic Nanoparticles on a Thin Film Silicon Wafer

NASA Astrophysics Data System (ADS)

Liu, Cheng-Yang; Liu, Tze-An; Fu, Wei-En

2009-09-01

Light scattering has shown its powerful diagnostic capability to characterize optical quality surfaces. In this study, the theory of bidirectional reflectance distribution function (BRDF) was used to analyze the metallic nanoparticles' sizes on wafer surfaces. The BRDF of a surface is defined as the angular distribution of radiance scattered by the surface normalized by the irradiance incident on the surface. A goniometric optical scatter instrument has been developed to perform the BRDF measurements on polarized light scattering on wafer surfaces for the diameter and distribution measurements of metallic nanoparticles. The designed optical scatter instrument is capable of distinguishing various types of optical scattering characteristics, which are corresponding to the diameters of the metallic nanoparticles, near surfaces by using the Mueller matrix calculation. The metallic nanoparticle diameter of measurement is 60 nm on 2 inch thin film wafers. These measurement results demonstrate that the polarization of light scattered by metallic particles can be used to determine the size of metallic nanoparticles on silicon wafers.

One dimensional metallic edges in atomically thin WSe2 induced by air exposure

NASA Astrophysics Data System (ADS)

Addou, Rafik; Smyth, Christopher M.; Noh, Ji-Young; Lin, Yu-Chuan; Pan, Yi; Eichfeld, Sarah M.; Fölsch, Stefan; Robinson, Joshua A.; Cho, Kyeongjae; Feenstra, Randall M.; Wallace, Robert M.

2018-04-01

Transition metal dichalcogenides are a unique class of layered two-dimensional (2D) crystals with extensive promising applications. Tuning the electronic properties of low-dimensional materials is vital for engineering new functionalities. Surface oxidation is of particular interest because it is a relatively simple method of functionalization. By means of scanning probe microscopy and x-ray photoelectron spectroscopy, we report the observation of metallic edges in atomically thin WSe2 monolayers grown by chemical vapor deposition on epitaxial graphene. Scanning tunneling microscopy shows structural details of WSe2 edges and scanning tunneling spectroscopy reveals the metallic nature of the oxidized edges. Photoemission demonstrates that the formation of metallic sub-stoichiometric tungsten oxide (WO2.7) is responsible for the high conductivity measured along the edges. Ab initio calculations validate the susceptibility of WSe2 nanoribbon edges to oxidation. The zigzag terminated edge exhibits metallic behavior prior the air-exposure and remains metallic after oxidation. Comprehending and exploiting this property opens a new opportunity for application in advanced electronic devices.

Low-head feeding system for thin section castings

DOEpatents

Daniel, Sabah S.; Kleeb, Thomas R.; Lewis, Thomas W.; McDermott, John F.; Ozgu, Mustafa R.; Padfield, Ralph C.; Rego, Donovan N.; Vassilicos, Achilles

1990-01-01

A feed system is provided for conveying molten metal to a thin section caster having mold surfaces moving exclusively in the direction of casting. The feed system has a passage of circular cross section adjacent to one end thereof for receiving molten metal and a rectangular cross section at the delivery end thereof adjacent to the caster. The feed system is designed for supplying molten metal to the caster at low pressure for "closed-pool" type caster operation. The point of highest elevation in the metal flow passage of the feed system is on the upper surface of a transition portion where the cross section changes from circular to rectangular adjacent to the nozzle. The level or height of the high point above the centerline of the nozzle exit is selected so as to be less than the pressure of the metal measured in inches at the nozzle exit. This feature enables the maintenance of positive pressure in the metal within the feed system so that ingress of air into the metal is prevented.

Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Zhu, Shuanglin

Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Cervical Cancer Screening (PDQ®)—Patient Version

Cancer.gov

Cervical cancer screening tests (e.g., the Papanicolaou (Pap) Test, HPV DNA, Thin-prep) find cervical changes before cancer develops. Learn more about the potential benefits and harms of these tests in this expert-reviewed summary.

Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provo, James L., E-mail: jlprovo@verizon.net

2016-07-15

Aluminum has desirable characteristics of good thermal properties, good electrical characteristics, good optical properties, and the characteristic of being nonmagnetic and having a low atomic weight (26.98 g atoms), but because of its low melting point (660 °C) and ability as a reactive metal to alloy with most common metals in use, it has been ignored as a substrate material for use in processing thin films. The author developed a simple solution to this problem, by putting a permeation barrier of alumina (Al{sub 2}O{sub 3}) onto the surface of pure Al substrates by using a standard chemical oxidation process of the surfacemore » (i.e., anodization), before additional film deposition of reactive metals at temperatures up to 500 °C for 1-h, without the formation of alloys or intermetallic compounds to affect the good properties of Al substrates. The chromic acid anodization process used (MIL-A-8625) produced a film barrier of ∼(500–1000) nm of alumina. The fact that refractory Al{sub 2}O{sub 3} can inhibit the reaction of metals with Al at temperatures below 500 °C suggests that Al is a satisfactory substrate if properly oxidized prior to film deposition. To prove this concept, thin film samples of Cr, Mo, Er, Sc, Ti, and Zr were prepared on anodized Al substrates and studied by x-ray diffraction, Rutherford ion back scattering, and Auger/argon sputter surface profile analysis to determine any film substrate interactions. In addition, a major purpose of our study was to determine if ErD{sub 2} thin films could be produced on Al substrates with fully hydrided Er films. Thus, a thin film of ErD{sub 2} on an anodized Al substrate was prepared and studied, with and without the alumina permeation barrier. Films for study were prepared on 1.27 cm diameter Al substrates with ∼500 nm of the metals studied after anodization. Substrates were weighed, cleaned, and vacuum fired at 500 °C prior to use. The Al substrates were deposited using standard electron beam cold crucible evaporation techniques, and after deposition the Er film was hydrided with D{sub 2} gas using a standard nonair exposure hydriding technique. All processing was conducted in an all metal ion pumped ultrahigh vacuum system. Results showed that e-beam deposition of films studied onto Al substrates could be successfully performed, if a permeation barrier of Al{sub 2}O{sub 3} from 500 to 1000 nm was made prior to thin film deposition up to temperatures of 500 °C for 1-h. Hydrides also, could be produced with full gas/metal atomic ratios of ∼2.0 as evidenced by the ErD{sub 2} films produced. Thus, the use of a simple permeation barrier of Al{sub 2}O{sub 3} on Al substrates prior to additional metal film deposition was proven to be a successful method of producing both thin metal films and hydride films of various types for many applications.« less

Screen-Printed Electrodes Modified with “Green” Metals for Electrochemical Stripping Analysis of Toxic Elements

PubMed Central

Economou, Anastasios

2018-01-01

This work reviews the field of screen-printed electrodes (SPEs) modified with “green” metals for electrochemical stripping analysis of toxic elements. Electrochemical stripping analysis has been established as a useful trace analysis technique offering many advantages compared to competing optical techniques. Although mercury has been the preferred electrode material for stripping analysis, the toxicity of mercury and the associated legal requirements in its use and disposal have prompted research towards the development of “green” metals as alternative electrode materials. When combined with the screen-printing technology, such environment-friendly metals can lead to disposable sensors for trace metal analysis with excellent operational characteristics. This review focuses on SPEs modified with Au, Bi, Sb, and Sn for stripping analysis of toxic elements. Different modification approaches (electroplating, bulk modification, use of metal precursors, microengineering techniques) are considered and representative applications are described. A developing related field, namely biosensing based on stripping analysis of metallic nanoprobe labels, is also briefly mentioned. PMID:29596391

Screen-Printed Electrodes Modified with "Green" Metals for Electrochemical Stripping Analysis of Toxic Elements.

PubMed

Economou, Anastasios

2018-03-29

This work reviews the field of screen-printed electrodes (SPEs) modified with "green" metals for electrochemical stripping analysis of toxic elements. Electrochemical stripping analysis has been established as a useful trace analysis technique offering many advantages compared to competing optical techniques. Although mercury has been the preferred electrode material for stripping analysis, the toxicity of mercury and the associated legal requirements in its use and disposal have prompted research towards the development of "green" metals as alternative electrode materials. When combined with the screen-printing technology, such environment-friendly metals can lead to disposable sensors for trace metal analysis with excellent operational characteristics. This review focuses on SPEs modified with Au, Bi, Sb, and Sn for stripping analysis of toxic elements. Different modification approaches (electroplating, bulk modification, use of metal precursors, microengineering techniques) are considered and representative applications are described. A developing related field, namely biosensing based on stripping analysis of metallic nanoprobe labels, is also briefly mentioned.

Applications in Energy, Optics and Electronics.

ERIC Educational Resources Information Center

Rosenberg, Robert; And Others

1980-01-01

Discusses the applications of thin films in energy, optics and electronics. The use of thin-film technologies for heat mirrors, anti-reflection coatings, interference filters, solar cells, and metal contacts is included. (HM)

Tracking metal ions with polypyrrole thin films adhesively bonded to diazonium-modified flexible ITO electrodes.

PubMed

Lo, Momath; Diaw, Abdou K D; Gningue-Sall, Diariatou; Aaron, Jean-Jacques; Oturan, Mehmet A; Chehimi, Mohamed M

2018-05-09

Adhesively bonded polypyrrole thin films doped with benzene sulfonic acid (BSA) were electrodeposited on aminobenzenediazonium-modified flexible ITO electrodes and further employed for the detection of Pb 2+ , Cu 2+ , and Cd 2+ metal ions in aqueous medium. The aminophenyl (AP) adhesive layer was grafted to ITO by electroreduction of the in situ generated parent diazonium compound. Polypyrrole (PPy) thin films exhibited remarkable adhesion to aminophenyl (ITO-AP). The strongly adherent polypyrrole films exhibited excellent electroactivity in the doped state with BSA which itself served to chelate the metal ions in aqueous medium. The surface of the resulting, modified flexible electrode was characterized by XPS, SEM, and electrochemical methods. The ITO-AP-PPy electrodes were then used for the simultaneous detection of Cu 2+ , Cd 2+ , and Pb 2+ by differential pulse voltammetry (DPV). The detection limits were 11.1, 8.95, and 0.99 nM for Cu 2+ , Cd 2+ , and Pb 2+ , respectively. In addition, the modified electrodes displayed a good reproducibility, making them suitable for the determination of heavy metals in real wastewater samples.

Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu; Khorasani, Arash Elhami

2015-11-28

Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs thatmore » have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.« less

Producing CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1988-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1991-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Screening Technique for Lead and Cadmium in Toys and Other Materials Using Atomic Absorption Spectroscopy

ERIC Educational Resources Information Center

Brouwer, Henry

2005-01-01

A simple procedure to quickly screen different consumer products for the presence of lead, cadmium, and other metals is described. This screening technique avoids expending a lot of preparation time on samples known to contain low levels of hazardous metals where only samples testing positive for the desired elements need to be analyzed…

Design of a medium size x-ray mirror module based on thin glass foils

NASA Astrophysics Data System (ADS)

Basso, Stefano; Civitani, Marta; Pareschi, Giovanni

2016-07-01

The hot slumping glass technology for X-ray mirror is under development and in the last years the results have been improved. Nustar is the first X-ray telescope based on slumped glass foils and it benefit is the low cost compared to the direct polishing of glass. With the slumping technique it is possible to maintain the glass mass to low values with respect to the direct polishing, but in general the angular resolution is worst. A further technique based on glass is the cold shaping of foils. The improved capabilities of manufacturing thin glass foils, pushed by the industrial application for screens, open new possibilities for X-ray mirror. The increase in strength of thin tempered glasses, the reduction of thickness errors and the good roughness of flat foils are potentially great advantages. In this paper a design of a mediumsize X-ray mirror module is analysed. It is based on integration of glass foils, stacked directly on a supporting structure that is part of the X-ray telescope using stiffening ribs as spacer between foils. The alignment of each stack is performed directly into the integration machine avoiding the necessity of the alignment of different stacked modules. A typical module (glass optic and metallic structure) provides an effective area of 10 cm2/kg at 1 keV (with a mass of about 50- 100 kg and a focal length of 10 m).

Method for forming glass-to-metal seals

DOEpatents

Kramer, D.P.; Massey, R.T.

1985-08-26

Disclosed is a method for forming a glass-to-metal seal in which the glass has a higher melting point than the metal. The molten glass is vacuum injection molded onto the metal, thus melting a very thin layer of the surface of the metal long enough to form a seal, but not long enough to cause a distortion in the shape of the metal component.

Thin-Film Nanocapacitor and Its Characterization

ERIC Educational Resources Information Center

Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

2007-01-01

An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

Optical properties and crystallinity of silver mirrors under a 35 krad cobalt-60 radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiu, Po-Kai, E-mail: pkchiu@itrc.narl.org.tw; Chiang, Donyau; Lee, Chao-Te

2015-09-15

This study addresses the effects of thin film optical design and environmental radiation on the optical properties of silver mirrors. Different experimental thin film optical designs are selected, and the film stack is built using Macleod's approach. Mirror elements are exposed to the same dose of radiation and their properties are characterized using a spectrophotometer equipped with an integration sphere and an x-ray diffractometer. Spectrophotometric analyses of mirrors exposed to about 35 krad of {sup 60}Co radiations overall show that the B270 glass substrates coated with titanium oxide (TiO{sub 2}), silicon dioxide (SiO{sub 2}), pure chrome, and pure silver effectivelymore » reduces radiation damage. The absorption spectrum of the TiO{sub 2} film in the visible region decreases after radiation and displays drifting. As thin metal films comparison, the silver thin film exhibits higher radiation resistance than the chrome thin film. The x-ray diffraction analysis on metal film layers reveals that crystallinity slightly increases when the silver thin film is irradiated.« less

Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

Dewetting of thin films on flexible substrates via direct-write laser exposure

NASA Astrophysics Data System (ADS)

Ferrer, Anthony Jesus

Microelectromechanical systems (MEMS) have enabled a wide variety of technologies both in the consumer space and in industrial/research areas. At the market level, such devices advance by the invention and innovation of production techniques. Additionally, there has been increased demand for flexible versions of such MEMS devices. Thin film patterning, represents a key technology for the realization of such flexible electronics. Patterns and methods that can be directly written into the thin film allow for design modification on the fly with the need for harsh chemicals and long etching steps. Laser-induced dewetting has the potential to create patterns in thin films at both the microscopic and nanoscopic level without wasting deposited material. This thesis presents the first demonstration of high-speed direct-write patterning of metallic thin films that uses a laser-induced dewetting phenomenon to prevent material loss. The ability to build film material with this technique is explored using various scanning geometries. Finally, demonstrations of direct-write dewetting of a variety of thin films will be presented with special consideration for high melting point metals deposited upon polymer substrates.

Glass transition memorized by the enthalpy-entropy compensation in the shear thinning of supercooled metallic liquids.

PubMed

Zhang, Meng; Liu, Lin

2018-05-03

To unravel the true nature of glass transition, broader insights into glass forming have been gained by examining the stress-driven glassy systems, where strong shear thinning, i.e., a reduced viscosity under increasing shear rate, is encountered. It is argued that arbitrarily small stress-driven shear rates would "melt" the glass and erase any memory of its thermal history. In this work, we report a glass transition memorized by the enthalpy-entropy compensation in strongly shear-thinned supercooled metallic liquids, which coincides with the thermal glass transition in both the transition temperature and the activation Gibbs free energy. Our findings provide distinctive insights into both glass forming and shear thinning, and enrich current knowledge on the ubiquitous enthalpy-entropy compensation empirical law in condensed matter physics. © 2018 IOP Publishing Ltd.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Glass transition memorized by the enthalpy-entropy compensation in the shear thinning of supercooled metallic liquids

NASA Astrophysics Data System (ADS)

Zhang, Meng; Liu, Lin

2018-06-01

To unravel the true nature of glass transition, broader insights into glass forming have been gained by examining the stress-driven glassy systems, where strong shear thinning, i.e. a reduced viscosity under increasing shear rate, is encountered. It is argued that arbitrarily small stress-driven shear rates would ‘melt’ the glass and erase any memory of its thermal history. In this work, we report a glass transition memorized by the enthalpy-entropy compensation in strongly shear-thinned supercooled metallic liquids, which coincides with the thermal glass transition in both the transition temperature and the activation Gibbs free energy. Our findings provide distinctive insights into both glass forming and shear thinning, and enrich current knowledge on the ubiquitous enthalpy-entropy compensation empirical law in condensed matter physics.

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

NASA Astrophysics Data System (ADS)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

PubMed

Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

2016-02-10

Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Thin Semiconductor/Metal Films For Infrared Devices

NASA Technical Reports Server (NTRS)

Lamb, James L.; Nagendra, Channamallappa L.

1995-01-01

Spectral responses of absorbers and reflectors tailored. Thin cermet films composites of metals and semiconductors undergoing development for use as broadband infrared reflectors and absorbers. Development extends concepts of semiconductor and dielectric films used as interference filters for infrared light and visible light. Composite films offer advantages over semiconductor films. Addition of metal particles contributes additional thermal conductivity, reducing thermal gradients and associated thermal stresses, with resultant enhancements of thermal stability. Because values of n in composite films made large, same optical effects achieved with lesser thicknesses. By decreasing thicknesses of films, one not only decreases weights but also contributes further to reductions of thermal stresses.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Electrostatic interactions between ions near Thomas-Fermi substrates and the surface energy of ionic crystals at imperfect metals.

PubMed

Kaiser, V; Comtet, J; Niguès, A; Siria, A; Coasne, B; Bocquet, L

2017-07-01

The electrostatic interaction between two charged particles is strongly modified in the vicinity of a metal. This situation is usually accounted for by the celebrated image charges approach, which was further extended to account for the electronic screening properties of the metal at the level of the Thomas-Fermi description. In this paper we build upon a previous approach [M. A. Vorotyntsev and A. A. Kornyshev, Zh. Eksp. Teor. Fiz., 1980, 78(3), 1008-1019] and successive works to calculate the 1-body and 2-body electrostatic energy of ions near a metal in terms of the Thomas-Fermi screening length. We propose workable approximations suitable for molecular simulations of ionic systems close to metallic walls. Furthermore, we use this framework to calculate analytically the electrostatic contribution to the surface energy of a one dimensional crystal at a metallic wall and its dependence on the Thomas-Fermi screening length. These calculations provide a simple interpretation for the surface energy in terms of image charges, which allows for an estimation of the interfacial properties in more complex situations of a disordered ionic liquid close to a metal surface. The counter-intuitive outcome is that electronic screening, as characterized by a molecular Thomas-Fermi length l TF , profoundly affects the wetting of ionic systems close to a metal, in line with the recent experimental observation of capillary freezing of ionic liquids in metallic confinement.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

NASA Astrophysics Data System (ADS)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Study of various synthesis techniques of nanomaterials

NASA Astrophysics Data System (ADS)

Patil, Madhuri; Sharma, Deepika; Dive, Avinash; Mahajan, Sandeep; Sharma, Ramphal

2018-05-01

Development of synthesis techniques of realizing nano-materials over a range of sizes, shapes, and chemical compositions is an important aspect of nanotechnology. The remarkable size dependent physical & chemical properties of particles have fascinated and inspired research activity in this direction. This paper describes some aspects on synthesis and characterization of particles of metals, metal alloys, and oxides, either in the form of thin films or bulk shapes. A brief discussion on processing of thin-films is also described.

Solvothermal growth of a ruthenium metal-organic framework featuring HKUST-1 structure type as thin films on oxide surfaces.

PubMed

Kozachuk, Olesia; Yusenko, Kirill; Noei, Heshmat; Wang, Yuemin; Walleck, Stephan; Glaser, Thorsten; Fischer, Roland A

2011-08-14

Phase-pure crystalline thin films of a mixed-valence Ru(2)(II,III) metal-organic framework with 1,3,5-benzenetricarboxylate (btc) as a linker were solvothermally grown on amorphous alumina and silica surfaces. Based on the Rietveld refinement, the structure of Ru-MOF was assigned to be analogous to [Cu(3)(btc)(2)] (HKUST-1). This journal is © The Royal Society of Chemistry 2011

Detection of defects in formed sheet metal using medial axis transformation

NASA Astrophysics Data System (ADS)

Murmu, Naresh C.; Velgan, Roman

2003-05-01

In the metal forming processes, the sheet metals are often prone to various defects such as thinning, dents, wrinkles etc. In the present manufacturing environments with ever increasing demand of higher quality, detecting the defects of formed sheet metal using an effective and objective inspection system is the foremost norm to remain competitive in market. The defect detection using optical techniques aspire to satisfy its needs to be non-contact and fast. However, the main difficulties to achieve this goal remain essentially on the development of efficient evaluation technique and accurate interpretation of extracted data. The defect like thinning is detected by evaluating the deviations of the thickness in the formed sheet metal against its nominal value. The present evaluation procedure for determination of thickness applied on the measurements data is not without deficiency. To improve this procedure, a new evaluation approach based on medial axis transformation is proposed here. The formed sheet metals are digitized using fringe projection systems in different orientations, and afterwards registered into one coordinate frame. The medial axis transformation (MAT) is applied on the point clouds, generating the point clouds of MAT. This data is further processed and medial surface is determined. The thinning defect is detected by evaluating local wall thickness and other defects like wrinkles are determined using the shape recognition on the medial surface. The applied algorithm is simple, fast and robust.

Characterisation of well-adhered ZrO2 layers produced on structured reactors using the sonochemical sol-gel method

NASA Astrophysics Data System (ADS)

Jodłowski, Przemysław J.; Chlebda, Damian K.; Jędrzejczyk, Roman J.; Dziedzicka, Anna; Kuterasiński, Łukasz; Sitarz, Maciej

2018-01-01

The aim of this study was to obtain thin zirconium dioxide coatings on structured reactors using the sonochemical sol-gel method. The preparation method of metal oxide layers on metallic structures was based on the synergistic combination of three approaches: the application of ultrasonic irradiation during the synthesis of Zr sol-gel based on a precursor solution containing zirconium(IV) n-propoxide, the addition of stabilszing agents, and the deposition of ZrO2 on the metallic structures using the dip-coating method. As a result, dense, uniform zirconium dioxide films were obtained on the FeCrAlloy supports. The structured reactors were characterised by various physicochemical methods, such as BET, AFM, EDX, XRF, XRD, XPS and in situ Raman spectroscopy. The results of the structural analysis by Raman and XPS spectroscopy confirmed that the metallic surface was covered by a ZrO2 layer without any impurities. SEM/EDX mapping revealed that the deposited ZrO2 covered the metallic support uniformly. The mechanical and high temperature tests showed that the developed ultrasound assisted sol-gel method is an efficient way to obtain thin, well-adhered zirconium dioxide layers on the structured reactors. The prepared metallic supports covered with thin ZrO2 layers may be a good alternative to layered structured reactors in several dynamics flow processes, for example for gas exhaust abatement.

Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

NASA Astrophysics Data System (ADS)

Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

2017-10-01

We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

PubMed

van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

2015-08-12

We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

Passive radon/thoron personal dosimeter using an electrostatic collector and a diffused-junction detector

NASA Astrophysics Data System (ADS)

Bigu, J.; Raz, R.

1985-01-01

A solid-state alpha dosimeter has been designed and tested suitable for personal and environmental radon/thoron monitoring. The dosimeter basically consists of an electrostatic collector and an alpha-particle counting system with spectroscopy capabilities. The sensitive volume (˜20 cm3) of the electrostatic collector consists of a cylindrically shaped metal wire screen and a diffused-junction silicon alpha-detector covered with a thin aluminized Mylar sheet. A dc voltage (˜500 V) is applied between the wire screen and the Mylar sheet, with the latter held at negative potential relative to the former. Data can be retrieved during or after sampling by means of a microcomputer (Epson HX20) via a RS-232 communication interface unit. The dosimeter has been calibrated in a large (26 m3) radon/thoron test facility. A linear relationship was found between the dosimeter's alpha-count and both radon gas concentration and radon daughter working level. The dosimeter is mounted on top of an ordinary miner's cap lamp battery and is ideally suited for personal monitoring in underground uranium mines and other working areas. The dosimeter presented here is a considerably improved version of an earlier prototype.

Photosensitive space charge limited current in screen printed CdTe thin films

NASA Astrophysics Data System (ADS)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Parasitic corrosion-resistant anode for use in metal/air or metal/O/sub 2/ cells

DOEpatents

Joy, R.W.; Smith, D.F.

1982-09-20

A consumable metal anode is described which is used in refuelable electrochemical cells and wherein at least a peripheral edge portion of the anode is protected against a corrosive alkaline environment of the cell by the application of a thin metal coating, the coating being formed of metals such as nickel, silver, and gold.

Wire winding increases lifetime of oxide coated cathodes

NASA Technical Reports Server (NTRS)

Kerslake, W.; Vargo, D.

1965-01-01

Refractory-metal heater base wound with a thin refractory metal wire increases the longevity of oxide-coated cathodes. The wire-wound unit is impregnated with the required thickness of metal oxide. This cathode is useful in magnetohydrodynamic systems and in electron tubes.

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Fluorine and oxygen plasma influence on nanoparticle formation and aggregation in metal oxide thin film transistors

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2017-03-01

Despite recent advances in metal oxide thin-film transistor technology, there are no foundry processes available yet for large-scale deployment of metal oxide electronics and photonics, in a similar way as found for silicon based electronics and photonics. One of the biggest challenges of the metal oxide platform is the stability of the fabricated devices. Also, there is wide dispersion on the measured specifications of fabricated TFT, from lot-to-lot and from different research groups. This can be partially explained by the importance of the deposition method and its parameters, which determine thin film microstructure and thus its electrical properties. Furthermore, substrate pretreatment is an important factor, as it may act as a template for material growth. Not so often mentioned, plasma processes can also affect the morphology of deposited films on further deposition steps, such as inducing nanoparticle formation, which strongly impact the conduction mechanism in the channel layer of the TFT. In this study, molybdenum doped indium oxide is sputtered onto ALD deposited HfO2 with or without pattering, and etched by RIE chlorine based processing. Nanoparticle formation is observed when photoresist is removed by oxygen plasma ashing. HfO2 etching in CF4/Ar plasma prior to resist stripping in oxygen plasma promotes the aggregation of nanoparticles into nanosized branched structures. Such nanostructuring is absent when oxygen plasma steps are replaced by chemical wet processing with acetone. Finally, in order to understand the electronic transport effect of the nanoparticles on metal oxide thin film transistors, TFT have been fabricated and electrically characterized.

Emissivity of freestanding membranes with thin metal coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zwol, P. J. van, E-mail: Pieter-jan.van.zwol@asml.com; Vles, D. F.; Voorthuijzen, W. P.

Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative heat emission and resistance to heat loads. We show that thin metal layers with thicknesses in the order of 1 nm enhance the emissivity of thin membranes by two to three orders of magnitude close to the theoretical limit of 0.5. This considerably increases thermal load capacity of membranes in vacuum environments. Our experimental results are in line with classical theory in which we adaptmore » thickness dependent scattering terms in the Drude and Lorentz oscillators.« less

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

NASA Astrophysics Data System (ADS)

Hwang, Jeongwoon; Oh, Young Jun; Kim, Jiyoung; Sung, Myung Mo; Cho, Kyeongjae

2018-04-01

We have performed first-principle calculations to explore the possibility of synthesizing atomically thin transition metal (TM) layers. Buckled structures as well as planar structures of elemental 2D TM layers result in significantly higher formation energies compared with sp-bonded elemental 2D materials with similar structures, such as silicene and phosphorene. It is shown that the TM layers can be stabilized by surface passivation with HS, C6H5S2, or O, and O passivation is most effective. The surface oxygen passivation can improve stability leading to thermodynamically stable TM monolayers except Au, which is the most non-reactive metal element. Such stabilized TM monolayers also show an electronic structure transition from metallic state of free-standing TM layer to semiconducting O-passivated Mo and W monolayers with band gaps of 0.20-1.38 eV.

A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides

NASA Astrophysics Data System (ADS)

Zavabeti, Ali; Ou, Jian Zhen; Carey, Benjamin J.; Syed, Nitu; Orrell-Trigg, Rebecca; Mayes, Edwin L. H.; Xu, Chenglong; Kavehei, Omid; O'Mullane, Anthony P.; Kaner, Richard B.; Kalantar-zadeh, Kourosh; Daeneke, Torben

2017-10-01

Two-dimensional (2D) oxides have a wide variety of applications in electronics and other technologies. However, many oxides are not easy to synthesize as 2D materials through conventional methods. We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloyed desired metals into the melt. On the basis of thermodynamic considerations, we predicted the composition of the self-limiting interfacial oxide. We isolated the surface oxide as a 2D layer, either on substrates or in suspension. This enabled us to produce extremely thin subnanometer layers of HfO2, Al2O3, and Gd2O3. The liquid metal-based reaction route can be used to create 2D materials that were previously inaccessible with preexisting methods. The work introduces room-temperature liquid metals as a reaction environment for the synthesis of oxide nanomaterials with low dimensionality.

Fluorophore Metal-Organic Complexes: High-Throughput Optical Screening for Aprotic Electrochemical Systems.

PubMed

Park, Sung Hyeon; Choi, Chang Hyuck; Lee, Seung Yong; Woo, Seong Ihl

2017-02-13

Combinatorial optical screening of aprotic electrocatalysts has not yet been achieved primarily due to H + -associated mechanisms of fluorophore modulation. We have overcome this problem by using fluorophore metal-organic complexes. In particular, eosin Y and quinine can be coordinated with various metallic cations (e.g., Li + , Na + , Mg 2+ , Zn 2+ , and Al 3+ ) in aprotic solvents, triggering changes in their fluorescent properties. These interactions have been used in a reliable screening method to determine oxygen reduction/evolution reaction activities of 100 Mn-based binary catalysts for the aprotic Li-air battery.

Stirring Up an Elastic Fluid: Critical Viscosity of Xenon-2 (CVX-2)

NASA Astrophysics Data System (ADS)

Berg, Robert F.; Moldover, Michael R.; Zimmerli, Gregory A.

2002-12-01

Whipped cream stays in place even when turned upside down. Yet it readily flows through the nozzle of a spray can to reach the dessert plate. This demonstrates the phenomenon of shear thinning that is important to many industrial and physical processes. Paints, film emulsions, and other complex solutions that are highly viscous under normal conditions but become thin and flow easily under shear forces. A simple fluid, such as water, does not exhibit shear thinning under normal conditions. Very close to the liquid-vapor critical point, where the distinction between liquid and vapor disappears, the fluid becomes more complex and is predicted to display shear thinning. At the critical point, xenon atoms interact over long distances in a classical model of cooperative phenomena. Physicists rely on this system to learn how long-range order arises. The Critical Viscosity of Xenon Experiment (CVX-2) will measure the viscous behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. Although it does not easily combine with other chemicals, its viscosity at the critical point can be used as a model for a range of fluids. Viscosity originates from the interactions of individual molecules. It is so complicated that, except for the simplest gas, it cannot be calculated accurately from theory. Tests with critical fluids can provide key data, but are limited on Earth because critical fluids are highly compressed by gravity. CVX-2 employs a tiny metal screen vibrating between two electrodes in a bath of critical xenon. The vibrations and how they dampen are used to measure viscosity. CVX flew on STS-85 (1997), where it revealed that, close to the critical point, the xenon is partly elastic: it can 'stretch' as well as flow. For STS-107, the hardware has been enhanced to determine if critical xenon is a shear-thinning fluid.

Stirring Up an Elastic Fluid: Critical Viscosity of Xenon-2 (CVX-2)

NASA Technical Reports Server (NTRS)

Berg, Robert F.; Moldover, Michael R.; Zimmerli, Gregory A.; Motil, Susan M. (Technical Monitor)

2002-01-01

Whipped cream stays in place even when turned upside down. Yet it readily flows through the nozzle of a spray can to reach the dessert plate. This demonstrates the phenomenon of shear thinning that is important to many industrial and physical processes. Paints, film emulsions, and other complex solutions that are highly viscous under normal conditions but become thin and flow easily under shear forces. A simple fluid, such as water, does not exhibit shear thinning under normal conditions. Very close to the liquid-vapor critical point, where the distinction between liquid and vapor disappears, the fluid becomes more complex and is predicted to display shear thinning. At the critical point, xenon atoms interact over long distances in a classical model of cooperative phenomena. Physicists rely on this system to learn how long-range order arises. The Critical Viscosity of Xenon Experiment (CVX-2) will measure the viscous behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. Although it does not easily combine with other chemicals, its viscosity at the critical point can be used as a model for a range of fluids. Viscosity originates from the interactions of individual molecules. It is so complicated that, except for the simplest gas, it cannot be calculated accurately from theory. Tests with critical fluids can provide key data, but are limited on Earth because critical fluids are highly compressed by gravity. CVX-2 employs a tiny metal screen vibrating between two electrodes in a bath of critical xenon. The vibrations and how they dampen are used to measure viscosity. CVX flew on STS-85 (1997), where it revealed that, close to the critical point, the xenon is partly elastic: it can 'stretch' as well as flow. For STS-107, the hardware has been enhanced to determine if critical xenon is a shear-thinning fluid.

Bimodal star formation - Constraints from the solar neighborhood

NASA Technical Reports Server (NTRS)

Wyse, Rosemary F. G.; Silk, J.

1987-01-01

The chemical evolution resulting from a simple model of bimodal star formulation is investigated, using constraints from the solar neighborhood to set the parameters of the initial mass function and star formation rate. The two modes are an exclusively massive star mode, which forms stars at an exponentially declining rate, and a mode which contains stars of all masses and has a constant star formation rate. Satisfactory agreement with the age-metallicity relation for the thin disk and with the metallicity structure of the thin-disk and spheroid stars is possible only for a small range of parameter values. The preferred model offers a resolution to several of the long-standing problems of galactic chemical evolution, including explanations of the age-metallicity relation, the gas consumption time scale, and the stellar cumulative metallicity distributions.

Harnessing the metal-insulator transition for tunable metamaterials

NASA Astrophysics Data System (ADS)

Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2017-08-01

The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

PubMed

Kim, Bo-Soon; Ju, Won-Ki; Lee, Min-Woo; Lee, Cheon; Lee, Seung-Gol; Beom-Hoan, O

2013-05-01

A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal annealing of a thin metallic film enables the creation of metal nano particles by isolating them from each other by means of the self-aggregation of the metal. After annealing, the samples were soaked in an aqueous etching solution of hydrofluoric acid and hydrogen peroxide. When silicon (Si) was etched for 2 minutes using the Au nano particles, the reflectance was decreased almost 0% over the entire wavelength range from 300 to 1300 nm due to its deep and steeply double tapered structure. When given varying incident angle degrees from 30 degrees to 60 degrees, the reflectance was also maintained at less than 3%. Following this, the etched silicon was treated with a plasma-polymerized fluorocarbon (PPFC) film of about 5 nm using an ICP reactor for surface modification. The result of this surface treatment, the contact angle increased significantly from 27.5 degrees to 139.3 degrees. The surface modification was successful and maintained almost 0% reflectance because of the thin film deposition.

Heteroepitaxial growth of Pt and Au thin films on MgO single crystals by bias-assisted sputtering

DOE PAGES

Tolstova, Yulia; Omelchenko, Stefan T.; Shing, Amanda M.; ...

2016-03-17

The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use asmore » epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.« less

Can an inadequate cervical cytology sample in ThinPrep be converted to a satisfactory sample by processing it with a SurePath preparation?

PubMed

Sørbye, Sveinung Wergeland; Pedersen, Mette Kristin; Ekeberg, Bente; Williams, Merete E Johansen; Sauer, Torill; Chen, Ying

2017-01-01

The Norwegian Cervical Cancer Screening Program recommends screening every 3 years for women between 25 and 69 years of age. There is a large difference in the percentage of unsatisfactory samples between laboratories that use different brands of liquid-based cytology. We wished to examine if inadequate ThinPrep samples could be satisfactory by processing them with the SurePath protocol. A total of 187 inadequate ThinPrep specimens from the Department of Clinical Pathology at University Hospital of North Norway were sent to Akershus University Hospital for conversion to SurePath medium. Ninety-one (48.7%) were processed through the automated "gynecologic" application for cervix cytology samples, and 96 (51.3%) were processed with the "nongynecological" automatic program. Out of 187 samples that had been unsatisfactory by ThinPrep, 93 (49.7%) were satisfactory after being converted to SurePath. The rate of satisfactory cytology was 36.6% and 62.5% for samples run through the "gynecology" program and "nongynecology" program, respectively. Of the 93 samples that became satisfactory after conversion from ThinPrep to SurePath, 80 (86.0%) were screened as normal while 13 samples (14.0%) were given an abnormal diagnosis, which included 5 atypical squamous cells of undetermined significance, 5 low-grade squamous intraepithelial lesion, 2 atypical glandular cells not otherwise specified, and 1 atypical squamous cells cannot exclude high-grade squamous intraepithelial lesion. A total of 2.1% (4/187) of the women got a diagnosis of cervical intraepithelial neoplasia 2 or higher at a later follow-up. Converting cytology samples from ThinPrep to SurePath processing can reduce the number of unsatisfactory samples. The samples should be run through the "nongynecology" program to ensure an adequate number of cells.

Research of the Aerophysics Institute for the Strategic Technology Office (DARPA)

DTIC Science & Technology

1975-06-30

19. (continued) 6. Unstable Optical Resonator Cavities 7. Laser Metal Screening Program 8. Ultraviolet & Blue-Green Lasers 9. Efficient Metal...Vapor Lasers 10. Atomic Transition Probabilities 11. Computer Modeling of Laser Dynamic 12. Startified Ocean Wakes L0. (continued) In the... laser area, the major task was the screening of atomic vapors, particularly metal vapors, for new, efficient lasers in the visible and ultra

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

NASA Astrophysics Data System (ADS)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition.

PubMed

Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E; Bellarmine, F; Ramanjaneyulu, M; Lamberti, Carlo; Ramachandra Rao, M S

2013-09-25

Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni(0) nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

Magnetic and transport properties of Co2Mn1-xCrxSi Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Aftab, M.; Hassnain Jaffari, G.; Hasanain, S. K.; Ali Abbas, Turab; Ismat Shah, S.

2013-09-01

Magnetic, transport, and magnetotransport properties of Co2Mn1-xCrxSi (0 ≤ x ≤ 1) DC sputter grown thin films have been investigated. In films with x > 0.2 saturation magnetization values are seen to deviate from the Slater-Pauling rule due to the enhancement of Co-Cr antisite disorder. The increasing structural disorder eventually results in a sign change of the temperature coefficient of resistivity (at x > 0.6), while a resistivity minimum is observed for the metallic compositions. From resistivity measurements, we conclude that there is a phase transition from a half-metallic ferromagnetic phase to a normal ferromagnetic phase at T ˜ 68 K in composition with x ≤ 0.2. Both the onset temperature and the temperature range for half metallic phase were found to decrease with increasing x among the metallic compositions. Magnetotransport measurements performed on metallic compositions at temperatures below and above the resistivity minimum suggest the presence of both the metallic as well as semiconducting/localized states.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

NASA Astrophysics Data System (ADS)

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (~1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals.

PubMed

Carey, Benjamin J; Ou, Jian Zhen; Clark, Rhiannon M; Berean, Kyle J; Zavabeti, Ali; Chesman, Anthony S R; Russo, Salvy P; Lau, Desmond W M; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C; Dickey, Michael D; Kaner, Richard B; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-17

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

PubMed Central

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kavehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-01-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes. PMID:28211538

Probing nonlocal effects in metals with graphene plasmons

NASA Astrophysics Data System (ADS)

Dias, Eduardo J. C.; Iranzo, David Alcaraz; Gonçalves, P. A. D.; Hajati, Yaser; Bludov, Yuliy V.; Jauho, Antti-Pekka; Mortensen, N. Asger; Koppens, Frank H. L.; Peres, N. M. R.

2018-06-01

In this paper, we analyze the effects of nonlocality on the optical properties of a system consisting of a thin metallic film separated from a graphene sheet by a hexagonal boron nitride (hBN) layer. We show that nonlocal effects in the metal have a strong impact on the spectrum of the surface plasmon-polaritons on graphene. If the graphene sheet is nanostructured into a periodic grating, we show that the resulting extinction curves can be used to shed light on the importance of nonlocal effects in metals. Therefore graphene surface plasmons emerge as a tool for probing nonlocal effects in metallic nanostructures, including thin metallic films. As a byproduct of our study, we show that nonlocal effects may lead to smaller losses for the graphene plasmons than what is predicted by a local calculation. Finally, we demonstrate that such nonlocal effects can be very well mimicked using a local theory with an effective spacer thickness larger than its actual value.

Maruhn-Greiner Maximum for Confirmation of Low Energy Nuclear Reactions (LENR) via a Compound Nucleus with Double Magic Numbers

NASA Astrophysics Data System (ADS)

Hora, Heinrich; Miley, George

2007-03-01

One of the most convincing facts about LENR due to deuterons (ds) or protons of very high concentration in host metals of palladium is the measurement of the large scale minimum in the reaction probability with product elements centered around the nucleon number A = 153. The local maximum was measured in this region is similar to fission of uranium at A = 119 where the local maximum follows the Maruhn-Greiner mechanism^1. We suggest this phenomenon can be explained by the strong screening of the Maxwellian ds on the degenerate rigid electron background within the swimming electrons at the metal surface or thin filem interfaces. The deuterons behave like neutrals at distances of above 2 picometers (pm) and form clusters due to soft attraction in the range of thermal energy; 10 pm diameter clusters can react over long time scales (10^6 s) with Pd leading to double magic number compound nuclei 306x126 decaying via fission to an A=153 element distribution. J. Maruhn et al, Phys. Rev. Letters 32, 548 (1974) H. Hora, G.H. Miley, CzechJ. Phys. 48, 1111 (1998)

Thick-film nickel-metal-hydride battery based on porous ceramic substrates

NASA Astrophysics Data System (ADS)

Do, Jing-Shan; Yu, Sen-Hao; Cheng, Suh-Fen

Nickel-metal-hydride (Ni-MH) batteries are prepared with thick-film and thin-film technologies based on porous ceramic substrates. The porosity and the mean pore diameter of BP ceramic substrates prepared from the argils increases from 19.81% and 0.0432 μm to 29.81% and 0.224 μm, respectively, upon increasing the ethyl cellulose content in the BP argil from 0 to 0.79%. The pore diameter of Al 2O 3 substrates prepared from Al 2O 3 powder is mainly distributed in the range 0.01-0.5 μm. The distribution of the pore diameters of BP ceramic substrates lies in two ranges, namely: 0.04-2 μm and 10-300 μm. Using BP ceramic plates and Al 2O 3 plates as substrates to fabricate thick-film Ni-MH batteries, the optimal electroactive material utilization in the batteries is 77.0 and 71.1%, respectively. On increasing the screen-printing number for preparing the cathode (Ni(OH) 2) from 1 to 3, the discharge capacity of the thick-film battery increases from 0.2917 to 0.7875 mAh, and the utilization in the battery decreases from 71.0 to 53.0%.

Full superconducting dome of strong Ising protection in gated monolayer WS2.

PubMed

Lu, Jianming; Zheliuk, Oleksandr; Chen, Qihong; Leermakers, Inge; Hussey, Nigel E; Zeitler, Uli; Ye, Jianting

2018-04-03

Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS 2 grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.

Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

NASA Astrophysics Data System (ADS)

Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

2015-02-01

The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

NASA Astrophysics Data System (ADS)

Özakın, Oǧuzhan; Aktaş, Şeydanur; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

In our study, as p-type crystalline Si substrate was used. Omic contact was performed by evaporating Al metal on the matt surface of crystal. On the other surface of it CdS thin film were enlarged with the technique of Spray Pyrolysis. Structural characteristics of the grown thin film was examined SEM and EDAX image. When examining SEM image of CdS thin film were totally covered the p-Si crystal surface of it was nearly homogeneous and The EDAX spectra showed that the expected different ratios metal percent exist in the alloys, approximately. On the CdS films whose surface features were investigated, at 10-7 torr pressure was obtained Cd/CdS/p-Si/Al sandwich structure by evaporating Cd. Firstly, the I-V (current-voltage) characteristics on 80K between 320K at room temperature of this structure was measured. I-V characteristics of the examined at parameters diodes calculation, Thermionic Emission, were used. The characteristic parameters such as barrier height and ideality factor of this structure have been calculated from the forward bias I-V characteristics. Consequently, it was seen that CdS thin film grown on p-Si semiconductor will be used confidently in Cd/p-Si metal-semiconductor contacts thanks to Spray Pyrolysis method.

A Dynamic Analysis of Piezoelectric Strained Elements.

DTIC Science & Technology

1992-12-01

Type Quartz Crystal Plates ", IEEE SU- 29 (3), pp. 1 2 1 - 1 2 7 (1982). [107] L.K.Chau,High -frequency Long-wave Vibrations of Piezoelectric Ceramic ... Plate Excited with Voltage", Acta Acustica, 8 (5), pp. 300-310 (1983). [265] M.Ting-rong, "Forced Vibrations of Metal-Piezo- ceramic Thin Composite... ceramic and Metal Composite Thin Circular Plate with Different Diameter for Each Layer", Acta Acustica, 9 (5), pp. 298-310 (1984); Chinese J. Acoust., 2(3

Deposition of Polymer Thin Films on ZnO Nanoparticles by a Plasma Treatment

DTIC Science & Technology

2001-11-01

exchange for removing metal ions frori water. If on the surface of these nanoparticles, an extremely thin layer of polyacrylic filr can be coated by a...plasma treatment. The polyacrylic film will react with metallic ions in water. As a result of the high surface-to-volume ratio of these narioparticles, the...experiments performed on a JEM 2010F. In FFIR experiment, potassium bromide(KBr) of 99%+ purity was obtained from Aldrich Chemical Company Inc

Thin structured rigid body for acoustic absorption

NASA Astrophysics Data System (ADS)

Starkey, T. A.; Smith, J. D.; Hibbins, A. P.; Sambles, J. R.; Rance, H. J.

2017-01-01

We present a thin acoustic metamaterial absorber, comprised of only rigid metal and air, that gives rise to near unity absorption of airborne sound on resonance. This simple, easily fabricated, robust structure comprising a perforated metal plate separated from a rigid wall by a deeply subwavelength channel of air is an ideal candidate for a sound absorbing panel. The strong absorption in the system is attributed to the thermo-viscous losses arising from a sound wave guided between the plate and the wall, defining the subwavelength channel.

Surface plasmons in new waveguide structures containing ultra-thin metal and silicon layers

NASA Astrophysics Data System (ADS)

Shabat, M. M.; Ubeid, M. F.; Abu Rahma, M. A.

2018-05-01

Reflected and transmitted powers due to the interaction of electromagnetic waves with a structure containing thin metal and silicon layer are investigated in more detail. The formulations for the transverse electric wave case are provided. Transfer matrix method is used to find the reflection and the transmission coefficients at each interface. Numerical results are presented to show the effect of the structure parameters, the incidence angle and the wavelength on the reflected, transmitted and loss powers.

Gradient composite metal-ceramic foam as supportive component for planar SOFCs and MIEC membranes

NASA Astrophysics Data System (ADS)

Smorygo, Oleg; Mikutski, Vitali; Marukovich, Alexander; Sadykov, Vladislav; Usoltsev, Vladimir; Mezentseva, Natalia; Borodinecs, Anatolijs; Bobrenok, Oleg

2011-06-01

A novel approach to the design of planar gradient porous supports for the thin-film SOFCs and MIEC membranes is described. The support's thermal expansion is controlled by the creation of a two-component composite metal-ceramic foam structure. Thin MIEC membranes and SOFCs were prepared on the composite supports by the layerwise deposition of composite functional layers including complex fluorites and perovskites. Lab-scale studies demonstrated promising performance of both MIEC membrane and SOFC.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

PubMed

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-12-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu 1 - x Fe x O 3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu 1 - x Fe x O 3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr 1 - x La x )(Ru 1 - x Fe x )O 3 . These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu 1 - x Fe x O 3 - δ thin films.

Impact of highway traffic and the acoustic screen on the content and spatial distribution of heavy metals in soils.

PubMed

Różański, Szymon; Jaworska, Hanna; Matuszczak, Katarzyna; Nowak, Joanna; Hardy, Amber

2017-05-01

Recent years have witnessed intensification of road traffic and, with it, the amount of substances emitted by vehicles. Such emissions need to be monitored for public health purposes. The aim of this study was to evaluate the impact of the highway traffic on the total content and bioavailability of Zn, Cu, Ni, Cd, Cr and Pb in nearby soils as well as influence of an acoustic screen on spatial distribution of the metals. The material included 40 soil samples collected from 15 research points located 5, 10, 25 and 50 m away from the road acoustic screen and from 4 points between the screen and the highway. Additionally, 5 research points were located next to the metal barrier. Selected physicochemical properties of soils were determined: soil texture, soil pH, TOC and CaCO 3 content. The total content of heavy metals in the soils was determined by AAS after digestion in aqua regia and bioavailable forms in 1 M diethylenetriaminepentaacetic acid. The research found low impact of the highway traffic on the content of heavy metals in soils; however, due to a very short period of this potential impact (5 years), the moderately polluted category of geo-accumulation index of cadmium and high bioavailability of lead indicate the need of repeating the research within the next several years. Furthermore, the road acoustic screen significantly influenced spatial distribution of the metals in soils.

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

NASA Technical Reports Server (NTRS)

DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

2001-01-01

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Interfacial Control of Dzyaloshinskii-Moriya Interaction in Heavy Metal/Ferromagnetic Metal Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Ma, Xin; Yu, Guoqiang; Li, Xiang; Wang, Tao; Wu, Di; Olsson, Kevin; Chu, Zhaodong; An, Kyongmo; Xiao, John; Wang, Kang; Li, Xiaoqin

The interfacial Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta/CoFeB/Pt(wedge)/MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of three is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostructures with tailored D for controlling skyrmions and magnetic domain wall chirality and dynamics. The work at UT-Austin and UCLA are supported by SHINES, an Energy Frontier Research Center funded by the U.S. DoE, Office of Science, Basic Energy Science (BES) under award # DE-SC0012670.

Effects Of Heat Sinks On VPPA Welds

NASA Technical Reports Server (NTRS)

Nunes, Arthur C.; Steranka, Paul O., Jr.

1991-01-01

Report describes theoretical and experimental study of absorption of heat by metal blocks in contact with metal plate while plate subjected to variable-polarity plasma-arc (VPPA) welding. Purpose of study to contribute to development of comprehensive mathematical model of temperature in weld region. Also relevant to welding of thin sheets of metal to thick blocks of metal, heat treatment of metals, and hotspots in engines.

Success and failure of the plasma analogy for Laughlin states on a torus

NASA Astrophysics Data System (ADS)

Fremling, Mikael

2017-01-01

We investigate the nature of the plasma analogy for the Laughlin wave function on a torus describing the quantum Hall plateau at ν =\\frac{1}{q} . We first establish, as expected, that the plasma is screening if there are no short nontrivial paths around the torus. We also find that when one of the handles has a short circumference—i.e. the thin-torus limit—the plasma no longer screens. To quantify this we compute the normalization of the Laughlin state, both numerically and analytically. In the thin torus limit, the analytical form of the normalization simplify and we can reconstruct the normalization and analytically extend it back into the 2D regime. We find that there are geometry dependent corrections to the normalization, and this in turn implies that the plasma in the plasma analogy is not screening when in the thin torus limit. Despite the breaking of the plasma analogy in this limit, the analytical approximation is still a good description of the normalization for all tori, and also allows us to compute hall viscosity at intermediate thickness.

The experimental evaluation and application of high-temperature solid lubricants. Ph.D. Thesis - Case Western Reserve Univ., 1989 Final Report

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher

1990-01-01

A research program is described which developes an understanding of high-temperature solid lubrication and experimental techniques through the development of a composite lubricant coating system. The knowledge gained through this research was then applied to a specific engineering challenge, the tribology of a sliding seal for hypersonic flight vehicles. The solid lubricant coating is a chromium carbide based composite combined with silver, which acts as a low temperature lubricant, and barium fluoride/calcium fluoride eutectic, which acts as a high-temperature lubricant. This composite coating provides good wear resistance and low friction for sliding contacts from room temperature to over 900 C in reducing or oxidative environments. The specific research on this coating included a composition screening using a foil gas bearing test rig and the use of thin silver films to reduce initial wear using a pin-on-disk test rig. The chemical stability of the materials used was also addressed. This research indicated that soft metallic films and materials which become soft at elevated temperatures are potentially good lubricants. The general results from the experiments with the model solid lubricant coating were then applied to a sliding seal design concept. This seal design requires that a braided ceramic fabric slide against a variety of metal counterface materials at temperatures from 25 to 850 C in an oxidative environment. A pin-on-disk tribometer was used to evaluate the tribological properties of these materials and to develop lubrication techniques. The results indicate that these seal materials must be lubricated to prevent wear and reduce friction. Thin films of silver, gold and calcium fluoride provided lubrication to the sliding materials.

Numerical study of electrical transport in co-percolative metal nanowire-graphene thin-films

NASA Astrophysics Data System (ADS)

Gupta, Man Prakash; Kumar, Satish

2016-11-01

Nanowires-dispersed polycrystalline graphene has been recently explored as a transparent conducting material for applications such as solar cells, displays, and touch-screens. Metal nanowires and polycrystalline graphene play synergetic roles during the charge transport in the material by compensating for each other's limitations. In the present work, we develop and employ an extensive computational framework to study the essential characteristics of the charge transport not only on an aggregate basis but also on individual constituents' levels in these types of composite thin-films. The method allows the detailed visualization of the percolative current pathways in the material and provides the direct evidence of current crowding in the 1-D nanowires and 2-D polygraphene sheet. The framework is used to study the effects of several important governing parameters such as length, density and orientation of the nanowires, grain density in polygraphene, grain boundary resistance, and the contact resistance between nanowires and graphene. We also present and validate an effective medium theory based generalized analytical model for the composite. The analytical model is in agreement with the simulations, and it successfully predicts the overall conductance as a function of several parameters including the nanowire network density and orientation and graphene grain boundaries. Our findings suggest that the longer nanowires (compared to grain size) with low angle orientation (<40°) with respect to the main carrier transport direction provide significant advantages in enhancing the conductance of the polygraphene sheet. We also find that above a certain value of grain boundary resistance (>60 × intra-grain resistance), the overall conductance becomes nearly independent of grain boundary resistance due to nanowires. The developed model can be applied to study other emerging transparent conducting materials such as nanowires, nanotubes, polygraphene, graphene oxide, and their hybrid nanostructures.

Molten Salt Assisted Self-Assembly: Synthesis of Mesoporous LiCoO2 and LiMn2 O4 Thin Films and Investigation of Electrocatalytic Water Oxidation Performance of Lithium Cobaltate.

PubMed

Saat, Gülbahar; Balci, Fadime Mert; Alsaç, Elif Pınar; Karadas, Ferdi; Dag, Ömer

2018-01-01

Mesoporous thin films of transition metal lithiates (TML) belong to an important group of materials for the advancement of electrochemical systems. This study demonstrates a simple one pot method to synthesize the first examples of mesoporous LiCoO 2 and LiMn 2 O 4 thin films. Molten salt assisted self-assembly can be used to establish an easy route to produce mesoporous TML thin films. The salts (LiNO 3 and [Co(H 2 O) 6 ](NO 3 ) 2 or [Mn(H 2 O) 4 ](NO 3 ) 2 ) and two surfactants (10-lauryl ether and cethyltrimethylammonium bromide (CTAB) or cethyltrimethylammonium nitrate (CTAN)) form stable liquid crystalline mesophases. The charged surfactant is needed for the assembly of the necessary amount of salt in the hydrophilic domains of the mesophase, which produces stable metal lithiate pore-walls upon calcination. The films have a large pore size with a high surface area that can be increased up to 82 m 2 g -1 . The method described can be adopted to synthesize other metal oxides and metal lithiates. The mesoporous thin films of LiCoO 2 show promising performance as water oxidation catalysts under pH 7 and 14 conditions. The electrodes, prepared using CTAN as the cosurfactant, display the lowest overpotentials in the literature among other LiCoO 2 systems, as low as 376 mV at 10 mA cm -2 and 282 mV at 1 mA cm -2 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advances in cervical screening technology.

PubMed

Stoler, M H

2000-03-01

The Pap smear unquestionably is a successful screening test for cervical cancer. However, recent advances in technology have raised questions regarding whether the conventional Pap smear is still the standard of care. This article relates issues of screening and cost-effectiveness to the state of the art in thin layer preparations, cytology automation, human papillomavirus screening, human papillomavirus vaccines, and other cervical screening adjuncts. Perhaps nowhere in medicine is clinical decision making being more strongly influenced by market and other external forces than in cervical cytopathology.

Resistance of Metallic Screens in a Cryogenic Flow

NASA Astrophysics Data System (ADS)

Fischer, Alexander; Stief, Malte

The propellant behaviour in cryogenic upper stages tanks imposes challenging requirements on the design, especially for future upper stages designed for multiple restarts and long ballistic flight phases. The main challenge is the supply of the propellants to the feed system prior to the engine reignition. During the entire mission the engine requires a gaseous and bubble free liquid supply of propellant at the required thermodynamic conditions. The current research focus is to prepare the initial steps for the maturation of the Propellant Management Device (PMD) technology for cryogenic tank systems. Main components of such a PMD are metallic screens. The metallic screens are used as barrier for any gas bubbles within the fluid stream approaching the space craft engines. The screen characteristics are of fundamental importance for the PMD and feed system design. The paper presents a summary on available experimental screen data with regard to the flow resistance and gives a comparison with theoretical and empirical predictions found in literature. The lack on comparable data with regard to space craft applications and the need on further research with cryogenic flows is demonstrated. The DLR Institute of Space Systems is preparing various cryogenic tests to collect the desired information about the flow properties of such metallic screens. The planned test setup and the foreseen experiments will be presented.

Screening and transport in 2D semiconductor systems at low temperatures

PubMed Central

Das Sarma, S.; Hwang, E. H.

2015-01-01

Low temperature carrier transport properties in 2D semiconductor systems can be theoretically well-understood within RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In this work, we derive a number of analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder 2D samples and also why some high-quality 2D materials manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover. PMID:26572738

Collision Welding of Dissimilar Materials by Vaporizing Foil Actuator: A Breakthrough Technology for Dissimilar Metal Joining

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daehn, Glenn S.; Vivek, Anupam; Liu, Bert C.

This work demonstrated and further developed Vaporizing Foil Actuator Welding (VFAW) as a viable technique for dissimilar-metal joining for automotive lightweighting applications. VFAW is a novel impact welding technology, which uses the pressure developed from electrically-assisted rapid vaporization of a thin aluminum foil (the consumable) to launch and ultimately collide two of more pieces of metal to create a solid-state bond between them. 18 dissimilar combinations of automotive alloys from the steel, aluminum and magnesium alloy classes were screened for weldability and characterized by metallography of weld cross sections, corrosion testing, and mechanical testing. Most combinations, especially a good numbermore » of Al/Fe pairs, were welded successfully. VFAW was even able to weld combinations of very high strength materials such as 5000 and 6000 series aluminum alloys to boron and dual phase steels, which is difficult to impossible by other joining techniques such as resistance spot welding, friction stir welding, or riveting. When mechanically tested, the samples routinely failed in a base metal rather than along the weld interface, showing that the weld was stronger than either of the base metals. As for corrosion performance, a polymer-based protective coating was used to successfully combat galvanic corrosion of 5 Al/Fe pairs through a month-long exposure to warm salt fog. In addition to the technical capabilities, VFAW also consumes little energy compared to conventional welding techniques and requires relatively light, flexible tooling. Given the technical and economic advantages, VFAW can be a very competitive joining technology for automotive lightweighting. The success of this project and related activities has resulted in substantial interest not only within the research community but also various levels of automotive supply chain, which are collaborating to bring this technology to commercial use.« less

Metal-phthalocyanine ordered layers on Au(110): Metal-dependent adsorption energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Massimi, Lorenzo, E-mail: lorenzo.massimi@uniroma1.it; Angelucci, Marco; Gargiani, Pierluigi

2014-06-28

Iron-phthalocyanine and cobalt-phthalocyanine chains, assembled along the Au(110)-(1×2) reconstructed channels, present a strong interaction with the Au metallic states, via the central metal ion. X-ray photoemission spectroscopy from the metal-2p core-levels and valence band high-resolution ultraviolet photoelectron spectroscopy bring to light signatures of the interaction of the metal-phthalocyanine single-layer with gold. The charge transfer from Au to the molecule causes the emerging of a metal-2p core level component at lower binding energy with respect to that measured in the molecular thin films, while the core-levels associated to the organic macrocycle (C and N 1s) are less influenced by the adsorption,more » and the macrocycles stabilize the interaction, inducing a strong interface dipole. Temperature Programmed Desorption experiments and photoemission as a function of temperature allow to estimate the adsorption energy for the thin-films, mainly due to the molecule-molecule van der Waals interaction, while the FePc and CoPc single-layers remain adsorbed on the Au surface up to at least 820 K.« less

Liquid metals as ultra-stretchable, soft, and shape reconfigurable conductors

NASA Astrophysics Data System (ADS)

Eaker, Collin B.; Dickey, Michael D.

2015-05-01

Conventional, rigid materials remain the key building blocks of most modern electronic devices, but they are limited in their ability to conform to curvilinear surfaces. It is possible to make electronic components that are flexible and in some cases stretchable by utilizing thin films, engineered geometries, or inherently soft and stretchable materials that maintain their function during deformation. Here, we describe the properties and applications of a micromoldable liquid metal that can form conductive components that are ultra-stretchable, soft, and shape-reconfigurable. This liquid metal is a gallium-based alloy with low viscosity and high conductivity. The metal develops spontaneously a thin, passivating oxide layer on the surface that allows the metal to be molded into non-spherical shapes, including films and wires, and patterned by direct-write techniques or microfluidic injection. Furthermore, unlike mercury, the liquid metal has low toxicity and negligible vapor pressure. This paper discusses the mechanical and electrical properties of the metal in the context of electronics, and discusses how the properties of the oxide layer have been exploited for new patterning techniques that enable soft, stretchable and reconfigurable devices.

Method for manufacturing electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1988-11-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

2016-10-01

We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

Solid state effects on the electronic structure of H2OEP.

PubMed

Marsili, M; Umari, P; Di Santo, G; Caputo, M; Panighel, M; Goldoni, A; Kumar, M; Pedio, M

2014-12-28

We present the results of a joint experimental and theoretical investigation concerning the effect of crystal packing on the electronic properties of the H2OEP molecule. Thin films, deposited in ultra high vacuum on metal surfaces, are investigated by combining valence band photoemission, inverse photoemission, and X-ray absorption spectroscopy. The spectra of the films are compared, when possible, with those measured in the gas phase. Once many-body effects are included in the calculations through the GW method, the electronic structure of H2OEP in the film and gas phase are accurately reproduced for both valence and conduction states. Upon going from an isolated molecule to the film phase, the electronic gap shrinks significantly and the lowest unoccupied molecular orbital (LUMO) and LUMO + 1 degeneracy is removed. The calculations show that the reduction of the transport gap in the film is entirely addressable to the enhancement of the electronic screening.

Emerging Carbon and Post-Carbon Nanomaterial Inks for Printed Electronics.

PubMed

Secor, Ethan B; Hersam, Mark C

2015-02-19

Carbon and post-carbon nanomaterials present desirable electrical, optical, chemical, and mechanical attributes for printed electronics, offering low-cost, large-area functionality on flexible substrates. In this Perspective, recent developments in carbon nanomaterial inks are highlighted. Monodisperse semiconducting single-walled carbon nanotubes compatible with inkjet and aerosol jet printing are ideal channels for thin-film transistors, while inkjet, gravure, and screen-printable graphene-based inks are better-suited for electrodes and interconnects. Despite the high performance achieved in prototype devices, additional effort is required to address materials integration issues encountered in more complex systems. In this regard, post-carbon nanomaterial inks (e.g., electrically insulating boron nitride and optically active transition-metal dichalcogenides) present promising opportunities. Finally, emerging work to extend these nanomaterial inks to three-dimensional printing provides a path toward nonplanar devices. Overall, the superlative properties of these materials, coupled with versatile assembly by printing techniques, offer a powerful platform for next-generation printed electronics.

Burning of solids in oxygen-rich environments in normal and reduced gravity. [combustion of cellulose acetates

NASA Technical Reports Server (NTRS)

Andracchio, C. R.; Cochran, T. H.

1974-01-01

An experimental program was conducted to investigate the combustion characteristics of solids burning in a weightless environment. The combustion characteristics of thin cellulose acetate material were obtained from specimens burned in supercritical as well as in low pressure oxygen atmospheres. Flame spread rates were measured and found to depend on material thickness and pressure in both normal gravity (1-g) and reduced gravity (0-g). A gravity effect on the burning process was also observed; the ratio of 1-g to 0-g flame spread rate becomes larger with increasing material thickness. Qualitative results on the combustion characteristics of metal screens (stainless steel, Inconel, copper, and aluminum) burning in supercritical oxygen and normal gravity are also presented. Stainless steel (300 sq mesh) was successfully ignited in reduced gravity; no apparent difference in the flame spread pattern was observed between 1-g and 0-g.

Horizontal electromagnetic casting of thin metal sheets

DOEpatents

Hull, John R.; Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

1987-01-01

Thin metal sheets are cast by magnetically suspending molten metal deposited within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled to form a solid metal sheet. Magnetic flux increases as the molten metal sheet moves downward and decreases as the molten metal sheet moves upward to stabilize the sheet and maintain it in equilibrium as it is linearly displaced and solidified by cooling gases. A conducting shield is electrically coupled to the molten metal sheet by means of either metal sheet engaging rollers or brushes on the solidified metal, and by means of an electrode in the vessel containing the molten metal thereby providing a return path for the eddy currents induced in the metal sheet by the AC coil generated magnetic flux. Variation in the geometry of the conducting shield allows the magnetic flux between the metal sheet and the conducting shield to be varied and the thickness in surface quality of the metal sheet to be controlled. Side guards provide lateral containment for the molten metal sheet and stabilize and shape the magnetic field while a leader sheet having electromagnetic characteristics similar to those of the metal sheet is used to start the casting process and precedes the molten metal sheet through the magnet and forms a continuous sheet therewith. The magnet may be either U-shaped with a single racetrack coil or may be rectangular with a pair of facing bedstead coils.

Horizontal electromagnetic casting of thin metal sheets

DOEpatents

Hull, John R.; Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

1988-01-01

Thin metal sheets are cast by magnetically suspending molten metal deposited within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled to form a solid metal sheet. Magnetic flux increases as the molten metal sheet moves downward and decreases as the molten metal sheet moves upward to stabilize the sheet and maintain it in equilibrium as it is linearly displaced and solidified by cooling gases. A conducting shield is electrically coupled to the molten metal sheet by means of either metal sheet engaging rollers or brushes on the solidified metal, and by means of an electrode in the vessel containing the molten metal thereby providing a return path for the eddy currents induced in the metal sheet by the AC coil generated magnetic flux. Variation in the geometry of the conducting shield allows the magnetic flux between the metal sheet and the conducting shield to be varied and the thickness in surface quality of the metal sheet to be controlled. Side guards provide lateral containment for the molten metal sheet and stabilize and shape the magnetic field while a leader sheet having electromagnetic characteristics similar to those of the metal sheet is used to start the casting process and precedes the molten metal sheet through the magnet and forms a continuous sheet therewith. The magnet may be either U-shaped with a single racetrack coil or may be rectangular with a pair of facing bedstead coils.

Modeling blur in various detector geometries for MeV radiography

NASA Astrophysics Data System (ADS)

Winch, Nicola M.; Watson, Scott A.; Hunter, James F.

2017-03-01

Monte Carlo transport codes have been used to model the detector blur and energy deposition in various detector geometries for applications in MeV radiography. Segmented scintillating detectors, where low Z scintillators combined with a high-Z metal matrix, can be designed in which the resolution increases with increasing metal fraction. The combination of various types of metal intensification screens and storage phosphor imaging plates has also been studied. A storage phosphor coated directly onto a metal intensification screen has superior performance over a commercial plate. Stacks of storage phosphor plates and tantalum intensification screens show an increase in energy deposited and detective quantum efficiency with increasing plate number, at the expense of resolution. Select detector geometries were tested by comparing simulation and experimental modulation transfer functions to validate the approach.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Edge Delamination of Monolayer Transition Metal Dichalcogenides.

PubMed

Ly, Thuc Hue; Yun, Seok Joon; Thi, Quoc Huy; Zhao, Jiong

2017-07-25

Delamination of thin films from the supportive substrates is a critical issue within the thin film industry. The emergent two-dimensional, atomic layered materials, including transition metal dichalcogenides, are highly flexible; thus buckles and wrinkles can be easily generated and play vital roles in the corresponding physical properties. Here we introduce one kind of patterned buckling behavior caused by the delamination from a substrate initiated at the edges of the chemical vapor deposition synthesized monolayer transition metal dichalcogenides, led by thermal expansion mismatch. The atomic force microscopy and optical characterizations clearly showed the puckered structures associated with the strain, whereas the transmission electron microscopy revealed the special sawtooth-shaped edges, which break the geometrical symmetry for the buckling behavior of hexagonal samples. The condition of the edge delamination is in accordance with the fracture behavior of thin film interfaces. This edge delamination and buckling process is universal for most ultrathin two-dimensional materials, which requires more attention in various future applications.

The stability of the epitaxially introduced metastable metallic structures of thin layers and multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cadeville, M.C.

Among the very large number of metallic thin films, sandwiches and multilayers which have been elaborated by epitaxy on various single crystalline substrates during the last decade, few new structures are reported. Limiting to the case of 3d metals, one finds with a great confidence bcc Cobalt, possibly bee Nickel and a non-compact hexagonal (hp) iron. Moreover structures existing at high temperature under ambient pressure are epitaxially stabilized at room temperature (RT) like fcc Cobalt, fcc Iron, fcc and bcc Manganese. The hcp iron which is stable under high pressure at RT would not be epitaxially stabilized at ambient pressuremore » conversely to first findings. The critical thickness of the metastable phase is generally limited to some monolayers in thin films, being slightly increased in sandwiches or multilayers, even if the phenomenological wetting criterion to build superlattices is not satisfied. No increased magnetic moment has been found up to now in the expanded lattices, contrary to band structure calculation predictions. 56 refs.« less

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

PubMed

Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

2017-01-01

With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

Half-metallic magnetism in Ti 3Co 5-xFe xB 2

DOE PAGES

Pathak, Rohit; Ahamed, Imran; Zhang, W. Y.; ...

2017-02-08

Here, bulk alloys and thin films of Fe-substituted Ti 3Co 5B 2 have been investigated by first-principle density-functional calculations. The series, which is of interest in the context of alnico magnetism and spin electronics, has been experimentally realized in nanostructures but not in the bulk. Our bulk calculations predict paramagnetism for Ti 3Co 5B 2, Ti 3Co 4FeB 2 and Ti 3CoFe 4B 2, whereas Ti 3Fe 5B 2 is predicted to be ferromagnetic. The thin films are all ferromagnetic, indicating that moment formation may be facilitated at nanostructural grain boundaries. One member of the thin-film series, namely Ti 3CoFemore » 4B 2, is half-metallic and exhibits perpendicular easy-axis magnetic anisotropy. The half-metallicity reflects the hybridization of the Ti, Fe and Co 3d orbitals, which causes a band gap in minority spin channel, and the limited equilibrium solubility of Fe in bulk Ti 3Co 5B 2 may be linked to the emerging half-metallicity due to Fe substitution.« less

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Half-metallic magnetism in Ti 3Co 5-xFe xB 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, Rohit; Ahamed, Imran; Zhang, W. Y.

Here, bulk alloys and thin films of Fe-substituted Ti 3Co 5B 2 have been investigated by first-principle density-functional calculations. The series, which is of interest in the context of alnico magnetism and spin electronics, has been experimentally realized in nanostructures but not in the bulk. Our bulk calculations predict paramagnetism for Ti 3Co 5B 2, Ti 3Co 4FeB 2 and Ti 3CoFe 4B 2, whereas Ti 3Fe 5B 2 is predicted to be ferromagnetic. The thin films are all ferromagnetic, indicating that moment formation may be facilitated at nanostructural grain boundaries. One member of the thin-film series, namely Ti 3CoFemore » 4B 2, is half-metallic and exhibits perpendicular easy-axis magnetic anisotropy. The half-metallicity reflects the hybridization of the Ti, Fe and Co 3d orbitals, which causes a band gap in minority spin channel, and the limited equilibrium solubility of Fe in bulk Ti 3Co 5B 2 may be linked to the emerging half-metallicity due to Fe substitution.« less

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa).more » For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.« less

Enhancement of as-sputtered silver-tantalum oxide thin film coating on biomaterial stainless steel by surface thermal treatment

NASA Astrophysics Data System (ADS)

Alias, Rodianah; Mahmoodian, Reza; Shukor, Mohd Hamdi Abd; Yew, Been Seok; Muhamad, Martini

2018-04-01

Stainless steel 316L (SS316L) is extensively used as surgical/clinical tools due to its low carbon content and excellent mechanical characteristic. The fabrication of metal ceramic based on this metallic biomaterial favor its biofunctionality properties. However, instability phase of amorphous thin film lead to degradation, corrosion and oxidation. Thus, thin film coating requires elevated adhesion strength and higher surface hardness to meet clinical tools criteria. In this study, the SS316L was deposited with micron thickness of Ag-TaO thin film by using magnetron sputtering. The microstructure, elemental analysis and phase identification of Ag-TaO thin film were characterized by using FESEM, EDX and XRD, respectively; whereas the micro scratch test and micro hardness test were performed by using Micro Scratch Testing System and Vickers Micro Hardness Tester, respectively. It was found that the coating thin film's adhesion and hardness strength were improved from 672 to 2749 mN and 142 to 158 Hv respectively. It was found that the as-deposited surface were treated at 500 °C of temperatures with 2 °C/min ramping rate enhance 4.1 times of the adhesion strength value. Furthermore, FESEM characterization revealed coarsening structure of the thin film coating which can provide high durability service.

The age-velocity dispersion relation of the Galactic discs from LAMOST-Gaia data

NASA Astrophysics Data System (ADS)

Yu, Jincheng; Liu, Chao

2018-03-01

We present the age-velocity dispersion relation (AVR) in three dimensions in the solar neighbourhood using 3564 commonly observed sub-giant/red giant branch stars selected from The Large Sky Area Multi-Object Fiber Spectroscopic Telescope, which gives the age and radial velocity, and Gaia, which measures the distance and proper motion. The stars are separated into metal-poor ([Fe/H] < -0.2 dex and metal-rich ([Fe/H] > -0.2 dex) groups, so that the metal-rich stars are mostly α-poor, while the metal-poor group are mostly contributed by α-enhanced stars. Thus, the old and metal-poor stars likely belong to the chemically defined thick disc population, while the metal-rich sample is dominated by the thin disc. The AVR for the metal-poor sample shows an abrupt increase at ≳7 Gyr, which is contributed by the thick disc component. On the other hand, most of the thin disc stars with [Fe/H] > -0.2 dex display a power-law-like AVR with indices of about 0.3-0.4 and 0.5 for the in-plane and vertical dispersions, respectively. This is consistent with the scenario that the disc is gradually heated by the spiral arms and/or the giant molecular clouds. Moreover, the older thin disc stars (>7 Gyr) have a rounder velocity ellipsoid, i.e. σϕ/σz is close to 1.0, probably due to the more efficient heating in vertical direction. Particularly for the old metal-poor sample located with |z| > 270 pc, the vertical dispersion is even larger than its azimuthal counterpart. Finally, the vertex deviations and the tilt angles are plausibly around zero with large uncertainties.

Method of handling radioactive alkali metal waste

DOEpatents

Wolson, Raymond D.; McPheeters, Charles C.

1980-01-01

Radioactive alkali metal is mixed with particulate silica in a rotary drum reactor in which the alkali metal is converted to the monoxide during rotation of the reactor to produce particulate silica coated with the alkali metal monoxide suitable as a feed material to make a glass for storing radioactive material. Silica particles, the majority of which pass through a 95 mesh screen or preferably through a 200 mesh screen, are employed in this process, and the preferred weight ratio of silica to alkali metal is 7 to 1 in order to produce a feed material for the final glass product having a silica to alkali metal monoxide ratio of about 5 to 1.