Nonlocal thermal transport across embedded few-layer graphene sheets

DOE PAGES

Liu, Ying; Huxtable, Scott T.; Yang, Bao; ...

2014-11-13

Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. Lastly, the nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transportmore » involving few-layer graphene sheets or other ultra-thin layered materials.« less

Edge-defined film-fed growth of thin silicon sheets

NASA Technical Reports Server (NTRS)

Ettouney, H. M.; Kalejs, J. P.

1984-01-01

Finite element analysis was used on two length scales to understand crystal growth of thin silicon sheets. Thermal-capillary models of entire ribbon growth systems were developed. Microscopic modeling of morphological structure of melt/solid interfaces beyond the point of linear instability was carried out. The application to silicon system is discussed.

Effects of interfaces on the thermal conductivity in Si/Si0.75Ge0.25 multilayer with varying Au layers

NASA Astrophysics Data System (ADS)

Hu, Yangsen; Wu, Zhenghua; Ye, Fengjie; Hu, Zhiyu

2018-02-01

The manoeuvre of thermal transport property across multilayer films with inserted metal layers through controlling the metal-nonmetal interfaces is of fundamental interest. In this work, amorphous Si/Si0.75Ge0.25 multilayer films inserted with varying Au layers were fabricated by magnetron sputtering. The structure and sharp interface of multilayers films were characterized by low angle x-ray diffraction (LAXRD), grazing incidence small angle x-ray scattering (GISAXS) and scanning electron microscopy (SEM). A differential 3ω method was applied to measure the effective thermal conductivity. The measurements show that thermal conductivity has changed as varying Au layers. Thermal conductivity increased from 0.94 to 1.31 Wm-1K-1 while Si0.75Ge0.25 layer was replaced by different Au layers, which was attributed to the strong electron-phonon coupling and interface thermal resistance in a metal-nonmetal multilayered system. Theoretical calculation combined with experimental results indicate that the thermal conductivity of the multilayer film could be facilely controlled by introducing different number of nanoconstructed metal-nonmetal interfaces, which provide a more insightful understanding of the thermal transport manipulation mechanism of the thin film system with inserting metal layers.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Pressurization of a Flightweight, Liquid Hydrogen Tank: Evaporation and Condensation at a Liquid Vapor Interface

NASA Technical Reports Server (NTRS)

Stewart, Mark E.

2017-01-01

Evaporation and condensation at a liquidvapor interface is important for long-term, in-space cryogenic propellant storage. Yet the current understanding of interfacial physics does not predict behavior or evaporation condensation rates. The proposed paper will present a physical model, based on the 1-D Heat equation and Schrages equation which demonstrates thin thermal layers at the fluidvapor interface.

Pressurization of a Flightweight, Liquid Hydrogen Tank: Evaporation and Condensation at a Liquid Vapor Interface

NASA Technical Reports Server (NTRS)

Stewart, Mark

2017-01-01

Evaporation and condensation at a liquid-vapor interface is important for long-term, in-space cryogenic propellant storage. Yet the current understanding of inter-facial physics does not consistently predict behavior of evaporation or condensation rates. The proposed paper will present a physical model, based on the 1-D Heat equation and Schrage's equation, which demonstrates thin thermal layers at the fluid vapor interface.

RERTR-9 Summary Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

D. M. Perez

2011-05-01

The RERTR-9 experiment was designed to test the effect of modified fuel/clad interfaces in monolithic fuel plates and to demonstrate that the addition of Si to the matrix material in dispersion plates continued to be effective at high loading (~8.5 g U/cc). Several monolithic fuel plates were fabricated by Hot Isostatic Pressing (HIP) and Friction Bonding (FB) with thin layers of Si inserted and by HIP with a Zr diffusion barrier between the fuel and cladding. Si was applied to the interface by thermal spray of Al Si mixtures and by the insertion of thin Si-rich Al alloy foil betweenmore » the fuel/clad interface. The dispersion fuel plates were fabricated by semi-standard rolling techniques (the reduction by rolling was lowered to limit fabrication defects). Matrix materials consisted of Al-Si alloys and mixtures with various levels of Si. The following report summarizes the life of the RERTR-9A/B experiment through end of irradiation, including as-run neutronic analysis, thermal analysis and hydraulic testing results.« less

Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing

NASA Astrophysics Data System (ADS)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2018-05-01

In this study, Ga0.6Sb0.4 thin films were grown on quartz and Ge(100) 1° off-axis substrates by RF magnetron sputtering at 500 °C. Ga0.6Sb0.4/Ge(100) shows n-type conductivity at room temperature (RT) and p-type conductivity at low temperatures, whereas undoped GaSb thin films exhibit p-type conductivity, irrespective of their growth methods and conditions. Their electrical properties were determined by rapid thermal annealing, which revealed that Ga0.6Sb0.4/Ge(100) contains two types of acceptors and two types of donors. The acceptors are considered to be GaSb and electrically active sites on dislocations originating at the Ga0.6Sb0.4/Ge(100) interface, while donors are believed to be Gai and electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface. In these acceptors and donors, the shallow donor concentration is higher than the shallow acceptor concentration, and the shallow donor level is deeper than the shallow acceptor level. Thus, we concluded that Ga0.6Sb0.4/Ge(100) shows n-type conductivity at RT due to electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface and native defects originating from excess Ga.

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

DTIC Science & Technology

2015-09-02

Joule heating should be restricted inside a small volume of the phase-change material and heat loss by thermal conduction to the surroundings needs to...technique (see Figure 1a). TDTR is a well-established pump− probe technique, capable of measuring the cross-plane thermal conductivity of nanometer-thin...films and thermal conductance per unit area across interfaces of particular interest27 (see Supporting Information, Section 1 and Figure S1

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

The thermal conductivity of chemical-vapor-deposited diamond films on silicon

NASA Astrophysics Data System (ADS)

Graebner, J. E.; Mucha, J. A.; Seibles, L.; Kammlott, G. W.

1992-04-01

The thermal conductivity of chemical-vapor-deposited diamond films on silicon is measured for the case of heat flow parallel to the plane of the film. A new technique uses thin-film heaters and thermometers on a portion of the film which is made to be free standing by etching away the substrate. Effects of thermal radiation are carefully avoided by choosing the length scale properly. Data for several films yield thermal conductivities in the range 2-6 W/cm C. This is comparable to copper (4 W/cm C) and is in a range that would be useful as a thin-film dielectric material, provided that the interface thermal resistance can be minimized. The conductivity varies inversely with the growth rate and the Raman linewidth.

Temperature measurements at material interfaces with thin-foil gauges

NASA Astrophysics Data System (ADS)

Morley, Mike; Chapman, David; Proud, William

2009-06-01

Measurements of shock heating are important in determining Equations of State that incorporate entropic effects. The use of thin-foil nickel gauges to measure shock heating in material was proposed by Rosenberg et al. in the 1980s. This research investigates the use of such commercial thin-foil gauges at interfaces between materials of different thermal and shock properties. The technique requires analysis of the resistance changes of the gauge which is a function of both temperature and stress. The response of manganin gauges to shock loading is well understood, and was used to calibrate for the piezoresistive effect in nickel. Results are presented for a variety of well-characterised materials and the applicability of the proposed method discussed.

Temperature Measurements at Material Interfaces with Thin-Foil Gauges

NASA Astrophysics Data System (ADS)

Morley, Mike J.; Chapman, David J.; Proud, William G.

2009-12-01

Measurements of shock heating are important in determining Equations of State that incorporate entropic effects. The use of thin-foil nickel gauges to measure shock heating in material was proposed by Rosenberg et al. in the 1980s. This research investigates the use of such commercial thin-foil gauges at interfaces between materials of different thermal and shock properties. The technique requires analysis of the resistance changes of the gauge which is a function of both temperature and stress. The response of manganin gauges to shock loading is well understood, and was used to calibrate for the piezoresistive effect in nickel. Results are presented for a variety of well-characterised materials and the applicability of the proposed method discussed.

Electrochemical determination of the glass transition temperature of thin polyelectrolyte brushes at solid-liquid interfaces by impedance spectroscopy.

PubMed

Alonso-García, Teodoro; Rodríguez-Presa, María José; Gervasi, Claudio; Moya, Sergio; Azzaroni, Omar

2013-07-16

Devising strategies to assess the glass transition temperature (Tg) of polyelectrolyte assemblies at solid-electrolyte interfaces is very important to understand and rationalize the temperature-dependent behavior of polyelectrolyte films in a wide range of settings. Despite the evolving perception of the importance of measuring Tg under aqueous conditions in thin film configurations, its straightforward measurement poses a challenging situation that still remains elusive in polymer and materials science. Here, we describe a new method based on electrochemical impedance spectroscopy (EIS) to estimate the glass transition temperature of planar polyelectrolyte brushes at solid-liquid interfaces. To measure Tg, the charge transfer resistance (Rct) of a redox probe diffusing through the polyelectrolyte brush was measured, and the temperature corresponding to the discontinuous change in Rct was identified as Tg. Furthermore, we demonstrate that impedance measurements not only facilitate the estimation of Tg but also enable a reliable evaluation of the transport properties of the polymeric interface, i.e., determination of diffusion coefficients, close to the thermal transition. We consider that this approach bridges the gap between electrochemistry and the traditional tools used in polymer science and offers new opportunities to characterize the thermal behavior of complex polymeric interfaces and macromolecular assemblies.

Parametric study of thin film evaporation from nanoporous membranes

NASA Astrophysics Data System (ADS)

Wilke, Kyle L.; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, TieJun; Wang, Evelyn N.

2017-10-01

The performance and lifetime of advanced electronics are often dictated by the ability to dissipate heat generated within the device. Thin film evaporation from nanoporous membranes is a promising thermal management approach, which reduces the thermal transport distance across the liquid film while also providing passive capillary pumping of liquid to the evaporating interface. In this work, we investigated the dependence of thin film evaporation from nanoporous membranes on a variety of geometric parameters. Anodic aluminum oxide membranes were used as experimental templates, where pore radii of 28-75 nm, porosities of 0.1-0.35, and meniscus locations down to 1 μm within the pore were tested. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by operating in the pore-level evaporation regime. The pore diameter had little effect on pore-level evaporation performance due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled with porosity as the evaporative area increased. Furthermore, moving the meniscus as little as 1 μm into the pore decreased the dissipated heat flux by more than a factor of two due to the added resistance to vapor escaping the pore. The experimental results elucidate thin film evaporation from nanopores and confirm findings of recent modeling efforts. This work also provides guidance for the design of future thin film evaporation devices for advanced thermal management. Furthermore, evaporation from nanopores is relevant to water purification, chemical separations, microfluidics, and natural processes such as transpiration.

Ion irradiation of the native oxide/silicon surface increases the thermal boundary conductance across aluminum/silicon interfaces

NASA Astrophysics Data System (ADS)

Gorham, Caroline S.; Hattar, Khalid; Cheaito, Ramez; Duda, John C.; Gaskins, John T.; Beechem, Thomas E.; Ihlefeld, Jon F.; Biedermann, Laura B.; Piekos, Edward S.; Medlin, Douglas L.; Hopkins, Patrick E.

2014-07-01

The thermal boundary conductance across solid-solid interfaces can be affected by the physical properties of the solid boundary. Atomic composition, disorder, and bonding between materials can result in large deviations in the phonon scattering mechanisms contributing to thermal boundary conductance. Theoretical and computational studies have suggested that the mixing of atoms around an interface can lead to an increase in thermal boundary conductance by creating a region with an average vibrational spectra of the two materials forming the interface. In this paper, we experimentally demonstrate that ion irradiation and subsequent modification of atoms at solid surfaces can increase the thermal boundary conductance across solid interfaces due to a change in the acoustic impedance of the surface. We measure the thermal boundary conductance between thin aluminum films and silicon substrates with native silicon dioxide layers that have been subjected to proton irradiation and post-irradiation surface cleaning procedures. The thermal boundary conductance across the Al/native oxide/Si interfacial region increases with an increase in proton dose. Supported with statistical simulations, we hypothesize that ion beam mixing of the native oxide and silicon substrate within ˜2.2nm of the silicon surface results in the observed increase in thermal boundary conductance. This ion mixing leads to the spatial gradation of the silicon native oxide into the silicon substrate, which alters the acoustic impedance and vibrational characteristics at the interface of the aluminum film and native oxide/silicon substrate. We confirm this assertion with picosecond acoustic analyses. Our results demonstrate that under specific conditions, a "more disordered and defected" interfacial region can have a lower resistance than a more "perfect" interface.

Reduction of thermal conductivity in MnSi{sub 1.7} multi-layered thin films with artificially inserted Si interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosaki, Y., E-mail: yosuke.kurosaki.uy@hitachi.com; Yabuuchi, S.; Nishide, A.

We report a lowered lattice thermal conductivity in nm-scale MnSi{sub 1.7}/Si multilayers which were fabricated by controlling thermal diffusions of Mn and Si atoms. The thickness of the constituent layers is 1.5–5.0 nm, which is comparable to the phonon mean free path of both MnSi{sub 1.7} and Si. By applying the above nanostructures, we reduced the lattice thermal conductivity down to half that of bulk MnSi{sub 1.7}/Si composite materials. The obtained value of 1.0 W/K m is the experimentally observed minimum in MnSi{sub 1.7}-based materials without any heavy element doping and close to the minimum thermal conductivity. We attribute the reduced latticemore » thermal conductivity to phonon scattering at the MnSi{sub 1.7}/Si interfaces in the multilayers.« less

Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

PubMed

Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

2015-03-11

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

NASA Astrophysics Data System (ADS)

Yilbas, B. S.; Ali, H.

2016-08-01

Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

PubMed Central

2012-01-01

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement. PMID:23072433

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films.

PubMed

Fan, Zheyong; Zheng, Jiansen; Wang, Hui-Qiong; Zheng, Jin-Cheng

2012-10-16

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.

Reduction in thermal conductivity and tunable heat capacity of inorganic/organic hybrid superlattices

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Niemelä, Janne-Petteri; Szwejkowski, Chester J.; Karppinen, Maarit; Hopkins, Patrick E.

2016-01-01

We study the influence of molecular monolayers on the thermal conductivities and heat capacities of hybrid inorganic/organic superlattice thin films fabricated via atomic/molecular layer deposition. We measure the cross plane thermal conductivities and volumetric heat capacities of TiO2- and ZnO-based superlattices with periodic inclusion of hydroquinone layers via time domain thermoreflectance. In comparison to their homogeneous counterparts, the thermal conductivities in these superlattice films are considerably reduced. We attribute this reduction in the thermal conductivity mainly due to incoherent phonon boundary scattering at the inorganic/organic interface. Increasing the inorganic/organic interface density reduces the thermal conductivity and heat capacity of these films. High-temperature annealing treatment of the superlattices results in a change in the orientation of the hydroquinone molecules to a 2D graphitic layer along with a change in the overall density of the hybrid superlattice. The thermal conductivity of the hybrid superlattice increases after annealing, which we attribute to an increase in crystallinity.

Nanoscale thermal transport. II. 2003-2012

NASA Astrophysics Data System (ADS)

Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

2014-03-01

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal analysis using proximal probes has achieved spatial resolution of 10 nm, temperature precision of 50 mK, sensitivity to heat flows of 10 pW, and the capability for thermal analysis of sub-femtogram samples.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Mount Protects Thin-Walled Glass or Ceramic Tubes from Large Thermal and Vibration Loads

NASA Technical Reports Server (NTRS)

Amato, Michael; Schmidt, Stephen; Marsh. James; Dahya, Kevin

2011-01-01

The design allows for the low-stress mounting of fragile objects, like thin walled glass, by using particular ways of compensating, isolating, or releasing the coefficient of thermal expansion (CTE) differences between the mounted object and the mount itself. This mount profile is lower than true full kinematic mounting. Also, this approach enables accurate positioning of the component for electrical and optical interfaces. It avoids the higher and unpredictable stress issues that often result from potting the object. The mount has been built and tested to space-flight specifications, and has been used for fiber-optic, optical, and electrical interfaces for a spaceflight mission. This mount design is often metal and is slightly larger than the object to be mounted. The objects are optical or optical/electrical, and optical and/or electrical interfaces are required from the top and bottom. This requires the mount to be open at both ends, and for the object s position to be controlled. Thin inside inserts at the top and bottom contact the housing at defined lips, or edges, and hold the fragile object in the mount. The inserts can be customized to mimic the outer surface of the object, which further reduces stress. The inserts have the opposite CTE of the housing material, partially compensating for the CTE difference that causes thermal stress. A spring washer is inserted at one end to compensate for more CTE difference and to hold the object against the location edge of the mount for any optical position requirements. The spring also ensures that any fiber-optic or optic interface, which often requires some pressure to ensure a good interface, does not overstress the fragile object. The insert thickness, material, and spring washer size can be traded against each other to optimize the mount and stresses for various thermal and vibration load ranges and other mounting requirements. The alternate design uses two separate, unique features to reduce stress and hold the object. A release agent is applied to the inside surface of the mount just before the binding potting material is injected in the mount. This prevents the potting material from bonding to the mount, and thus prevents stress from being applied, at very low temperatures, to the fragile object being mounted. The potting material mixing and curing is temperature- and humidity-controlled. The mount has radial grooves cut in it that the potting material fills, thus controlling the vertical position of the mounted object. The design can easily be used for long and thin objects, short and wide objects, and any shape in between. The design s advantages are amplified for long and thin fragile objects. The general testing range was 45 to +45 C, but multiple mounts were successfully tested down to 60 and up to 50 C and the design can be adjusted for larger ranges.

Study of SiO{sub 2}/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanthaphan, Atthawut, E-mail: chanthaphan@asf.mls.eng.osaka-u.ac.jp; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi

An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N{sub 2} ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO{sub 2}/SiC interfaces. Although N{sub 2}-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N{sub 2}-POA was achieved under certain conditions, i.e., thin SiO{sub 2} layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N{sub 2}-POA revealed the same evidence of slow trap passivation and fast trapmore » generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.« less

Effects of Electron Scattering at Metal-Nonmetal Interfaces on Electron-Phonon Equilibration in Gold Films

DTIC Science & Technology

2009-01-26

dielectrics is a major concern in thermal boundary conductance studies . This aspect of energy transfer has been extensively studied and modeled on long...electron-phonon coupling in the particle. There have been only a small number of studies looking at electron-phonon relaxation around interfaces in thin...film systems. These studies avoid complications due to nanopar- ticle geometries i.e., capillary modes on determining the electron-phonon-interfacial

Perovskite solar cell with an efficient TiO₂ compact film.

PubMed

Ke, Weijun; Fang, Guojia; Wang, Jing; Qin, Pingli; Tao, Hong; Lei, Hongwei; Liu, Qin; Dai, Xin; Zhao, Xingzhong

2014-09-24

A perovskite solar cell with a thin TiO2 compact film prepared by thermal oxidation of sputtered Ti film achieved a high efficiency of 15.07%. The thin TiO2 film prepared by thermal oxidation is very dense and inhibits the recombination process at the interface. The optimum thickness of the TiO2 compact film prepared by thermal oxidation is thinner than that prepared by spin-coating method. Also, the TiO2 compact film and the TiO2 porous film can be sintered at the same time. This one-step sintering process leads to a lower dark current density, a lower series resistance, and a higher recombination resistance than those of two-step sintering. Therefore, the perovskite solar cell with the TiO2 compact film prepared by thermal oxidation has a higher short-circuit current density and a higher fill factor.

Convection induced by thermal gradients on thin reaction fronts

NASA Astrophysics Data System (ADS)

Ruelas Paredes, David R. A.; Vasquez, Desiderio A.

2017-09-01

We present a thin front model for the propagation of chemical reaction fronts in liquids inside a Hele-Shaw cell or porous media. In this model we take into account density gradients due to thermal and compositional changes across a thin interface. The front separating reacted from unreacted fluids evolves following an eikonal relation between the normal speed and the curvature. We carry out a linear stability analysis of convectionless flat fronts confined in a two-dimensional rectangular domain. We find that all fronts are stable to perturbations of short wavelength, but they become unstable for some wavelengths depending on the values of compositional and thermal gradients. If the effects of these gradients oppose each other, we observe a range of wavelengths that make the flat front unstable. Numerical solutions of the nonlinear model show curved fronts of steady shape with convection propagating faster than flat fronts. Exothermic fronts increase the temperature of the fluid as they propagate through the domain. This increment in temperature decreases with increasing speed.

Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier's law of heat conduction at steady-state

NASA Astrophysics Data System (ADS)

Wu, Chia-Yu; Huang, Yin-Hsien; Wu, Hsin-Han; Hsieh, Tsung-Eong

2018-06-01

Fourier's law of heat conduction at steady-state was adopted to establish a measurement method utilizing platinum (Pt) thin-film electrodes as the heater and the temperature sensor. The thermal conductivities (κ's) of Pyrex glass, an epoxy resin and a commercial underfill for flip-chip devices were measured and a good agreement with previously reported values was obtained. The thermal boundary resistances (RTBR's) of Pt/sample interfaces were also extracted for discussing their influence on the thermal conduction of samples. Afterward, the flip-chip samples with 2×2 solder joint array utilizing Si wafers as the die and the substrate, without and with the underfills, were prepared and their thermal conductance were measured. For the sample without underfill, the air presenting in the gap of die and the substrate led to the poor thermal conductance of sample. With the insertion of underfills, the thermal conductance of flip-chip samples improved. The resistance to heat transfer across Si/underfill interfaces was also suppressed and to promote the thermal conductance of samples. The thermal properties of underfill and RTBR at Si/underfill interface were further implanted in the calculation of thermal conductance of flip-chip samples containing various solder joint arrays. The increasing number of solder joints diminished the influence of thermal conduction of underfill and RTBR of Si/underfill interface on the thermal conductance of samples. The insertion of underfill with high-κ value might promote the heat conductance of samples containing low-density solder joint arrays; however, it became insignificant in improving the heat conductance of samples containing high-density solder joint arrays.

Experimental Investigation on Thermal Effects in Ultrasonic Joining of Thin Poly(ethylene terephthalate) Films Using Torsional Vibrations

NASA Astrophysics Data System (ADS)

Adachi, Kazunari; Uchiyama, Kenta; Kuriyama, Takashi; Miyata, Ken; Hisamatsu, Tokuro

2009-11-01

The authors previously determined that thermal effects are not a dominant factor in the ultrasonic joining of very low density polyethylene (VLDPE) films using torsional vibration. Now, to confirm that the plastic materials are not “melted” by mechanically generated heat in the joining, they have conducted joining experiments for thin poly(ethylene terephthalate) (PET) films. The temperature at the interface of two PET films of 0.1 mm thickness only increased to approximately 100 °C, and no trace of liquidation of the material was observed at the interface under a polarizing microscope. Investigation using a differential scanning calorimeter (DSC) revealed that the “melting point” of PET is about 260 °C, and an ultrasonically joined specimen showed no significant difference in thermal characteristics compared with an intact PET film. It was also determined that the PET films cannot be joined even after being pressed together for a period of 30 min or longer at approximately 150 °C. From the results obtained using the microscope and the DSC, the authors conclude that melting of the materials plays essentially no role in ultrasonic plastic joining.

Universal Pinning Energy Barrier for Driven Domain Walls in Thin Ferromagnetic Films

NASA Astrophysics Data System (ADS)

Jeudy, V.; Mougin, A.; Bustingorry, S.; Savero Torres, W.; Gorchon, J.; Kolton, A. B.; Lemaître, A.; Jamet, J.-P.

2016-07-01

We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.

An IRIS Optically Thin View of the Dynamics of the Solar Chromosphere

NASA Astrophysics Data System (ADS)

Carlsson, M.

2017-12-01

We analyze the formation of the O I 1356 and Cl I 1351 lines and show that they are formed in the mid-chromosphere and are optically thin. Their non-thermal line-widths are thus a direct measure of the velocity field along the line of sight. We use this insight to analyze a large set of observations from the Interface Region Imaging Spectrograph (IRIS) to study the dynamics of the Solar Chromosphere.

Epitaxial growth of thermally stable cobalt films on Au(111)

NASA Astrophysics Data System (ADS)

Haag, N.; Laux, M.; Stöckl, J.; Kollamana, J.; Seidel, J.; Großmann, N.; Fetzer, R.; Kelly, L. L.; Wei, Z.; Stadtmüller, B.; Cinchetti, M.; Aeschlimann, M.

2016-10-01

Ferromagnetic thin films play a fundamental role in spintronic applications as a source for spin polarized carriers and in fundamental studies as ferromagnetic substrates. However, it is challenging to produce such metallic films with high structural quality and chemical purity on single crystalline substrates since the diffusion barrier across the metal-metal interface is usually smaller than the thermal activation energy necessary for smooth surface morphologies. Here, we introduce epitaxial thin Co films grown on an Au(111) single crystal surface as a thermally stable ferromagnetic thin film. Our structural investigations reveal an identical growth of thin Co/Au(111) films compared to Co bulk single crystals with large monoatomic Co terraces with an average width of 500 Å, formed after thermal annealing at 575 K. Combining our results from photoemission and Auger electron spectroscopy, we provide evidence that no significant diffusion of Au into the near surface region of the Co film takes place for this temperature and that no Au capping layer is formed on top of Co films. Furthermore, we show that the electronic valence band is dominated by a strong spectral contribution from a Co 3d band and a Co derived surface resonance in the minority band. Both states lead to an overall negative spin polarization at the Fermi energy.

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library.

PubMed

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library Fe x Si y Ge 100-x-y (20

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

NASA Astrophysics Data System (ADS)

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20

Electron beam induced strong organic/inorganic grafting for thermally stable lithium-ion battery separators

NASA Astrophysics Data System (ADS)

Choi, Yunah; Kim, Jin Il; Moon, Jungjin; Jeong, Jongyeob; Park, Jong Hyeok

2018-06-01

A tailored interface between organic and inorganic materials is of great importance to maximize the synergistic effects from hybridization. Polyethylene separators over-coated with inorganic thin films are the state-of-the art technology for preparing various secondary batteries with high safety. Unfortunately, the organic/inorganic hybrid separators have the drawback of a non-ideal interface, thus causing poor thermal/dimensional stability. Here, we report a straightforward method to resolve the drawback of the non-ideal interface between vapor deposited SiO2 and polyethylene separators, to produce a highly stable lithium-ion battery separator through strong chemical linking generated by direct electron beam irradiation. The simple treatment with an electron beam with an optimized dose generates thermally stable polymer separators, which may enhance battery safety under high-temperature conditions. Additionally, the newly formed Si-O-C or Si-CH3 chemical bonding enhances electrolyte-separator compatibility and thus may provide a better environment for ionic transport between the cathode and anode, thereby leading to better charge/discharge behaviors.

Phonon cross-plane transport and thermal boundary resistance: effect of heat source size and thermal boundary resistance on phonon characteristics

NASA Astrophysics Data System (ADS)

Ali, H.; Yilbas, B. S.

2016-09-01

Phonon cross-plane transport across silicon and diamond thin films pair is considered, and thermal boundary resistance across the films pair interface is examined incorporating the cut-off mismatch and diffusive mismatch models. In the cut-off mismatch model, phonon frequency mismatch for each acoustic branch is incorporated across the interface of the silicon and diamond films pair in line with the dispersion relations of both films. The frequency-dependent and transient solution of the Boltzmann transport equation is presented, and the equilibrium phonon intensity ratios at the silicon and diamond film edges are predicted across the interface for each phonon acoustic branch. Temperature disturbance across the edges of the films pair is incorporated to assess the phonon transport characteristics due to cut-off and diffusive mismatch models across the interface. The effect of heat source size, which is allocated at high-temperature (301 K) edge of the silicon film, on the phonon transport characteristics at the films pair interface is also investigated. It is found that cut-off mismatch model predicts higher values of the thermal boundary resistance across the films pair interface as compared to that of the diffusive mismatch model. The ratio of equilibrium phonon intensity due to the cut-off mismatch over the diffusive mismatch models remains >1 at the silicon edge, while it becomes <1 at the diamond edge for all acoustic branches.

Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

DTIC Science & Technology

2015-12-01

induced (non)stoichiometry on the structure, dielectric response, and thermal conductivity of SrTiO3 thin films. Chemistry of Materials. 2012;24:331...must be below a few percent. The external sources of loss, such as conductor interface losses and various losses that inevitably arise from device...epitaxy • Excellent control of film stoichiometry and thickness • Large area uniformity and potential for complex structure coating • Optimized

Effect of La2O3 addition on interface chemistry between 4YSZ top layer and Ni based alloy bond coat in thermal barrier coating by EB PVD.

PubMed

Park, Chan-Young; Yang, Young-Hwan; Kim, Seong-Won; Lee, Sung-Min; Kim, Hyung-Tae; Jang, Byung-Koog; Lim, Dae-Soon; Oh, Yoon-Suk

2014-11-01

The effect of a 5 mol% La2O3 addition on the forming behavior and compositional variation at interface between a 4 mol% Yttria (Y2O3) stabilized ZrO2 (4YSZ) top coat and bond coat (NiCrAlY) as a thermal barrier coating (TBC) has been investigated. Top coats were deposited by electron beam physical vapor deposition (EB PVD) onto a super alloy (Ni-Cr-Co-Al) substrate without pre-oxidation of the bond coat. Top coats are found to consist of dense columnar grains with a thin interdiffusion layer between metallic bond coats. In the as-received 4YSZ coating, a thin interdiffusion zone at the interface between the top and bond coats was found to consist of a Ni-Zr intermetallic compound with a reduced quantity of Y, Al or O elements. On the other hand, in the case of an interdiffusion area of 5 mol% La2O3-added 4YSZ coating, it was found that the complicated composition and structure with La-added YSZ and Ni-Al rich compounds separately. The thermal conductivity of 5 mol% La2O3-added 4YSZ coating (- 1.6 W/m x k at 1100 degrees C) was lower than a 4YSZ coating (- 3.2 W/m x k at 1100 degrees C) alone.

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

Phase field modeling of rapid crystallization in the phase-change material AIST

NASA Astrophysics Data System (ADS)

Tabatabaei, Fatemeh; Boussinot, Guillaume; Spatschek, Robert; Brener, Efim A.; Apel, Markus

2017-07-01

We carry out phase field modeling as a continuum simulation technique in order to study rapid crystallization processes in the phase-change material AIST (Ag4In3Sb67Te26). In particular, we simulate the spatio-temporal evolution of the crystallization of a molten area of the phase-change material embedded in a layer stack. The simulation model is adapted to the experimental conditions used for recent measurements of crystallization rates by a laser pulse technique. Simulations are performed for substrate temperatures close to the melting temperature of AIST down to low temperatures when an amorphous state is involved. The design of the phase field model using the thin interface limit allows us to retrieve the two limiting regimes of interface controlled (low temperatures) and thermal transport controlled (high temperatures) dynamics. Our simulations show that, generically, the crystallization velocity presents a maximum in the intermediate regime where both the interface mobility and the thermal transport, through the molten area as well as through the layer stack, are important. Simulations reveal the complex interplay of all different contributions. This suggests that the maximum switching velocity depends not only on material properties but also on the precise design of the thin film structure into which the phase-change material is embedded.

Thermal boundary conductance of hydrophilic and hydrophobic ionic liquids

NASA Astrophysics Data System (ADS)

Oyake, Takafumi; Sakata, Masanori; Yada, Susumu; Shiomi, Junichiro

2015-03-01

A solid/liquid interface plays a critical role for understanding mechanisms of biological and physical science. Moreover, carrier density of the surface is dramatically enhanced by electric double layer with ionic liquid, salt in the liquid state. Here, we have measured the thermal boundary conductance (TBC) across an interface of gold thin film and ionic liquid by using time-domain thermoreflectance technique. Following the prior researches, we have identified the TBC of two interfaces. One is gold and hydrophilic ionic liquid, N,N-Diethyl-N-methyl-N-(2-methoxyethyl) ammonium tetrafluoroborate (DEME-BF4), which is a hydrophilic ionic liquid, and the other is N,N-Diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis (trifluoromethanesulfonyl) imide (DEME-TFSI), which is a hydrophobic ionic liquid. We found that the TBC between gold and DEME-TFIS (19 MWm-2K-1) is surprisingly lower than the interface between gold and DEME-BF4 (45 MWm-2K-1). With these data, the importance of the wetting angle and ion concentration for the thermal transport at the solid/ionic liquid interface is discussed. Part of this work is financially supported by Japan Society for the Promotion of Science (JSPS) and Japan Science and Technology Agency. The author is financially supported by JSPS Fellowship.

Study of the thermal properties of low k dielectric thin films

NASA Astrophysics Data System (ADS)

Hu, Chuan

The integration of low k material is of great importance for the performance of an electronic device as the result of shrink in the device size. The thermal conductivity of low k materials is usually much lower than that of the traditionally used SiO2 and thus a tradeoff has to be properly evaluated. The thermal conduction in amorphous thin films is not only industrially important but also scientifically interesting. Many efforts have been done to understand the "phonon" propagation in an amorphous medium. Two experimental tools to study thermal properties are developed. The photothermal technique is an optical far field method and the 3o technique is an electrical near field method. The free standing and on-wafer photothermal techniques measure the out-of-plane thermal diffusivity directly and the 3o technique measures the out-of-plane thermal conductivity under our typical experimental configurations. The thermal diffusivities of a rigid rod like polyimide PI2611 and a flexible PI2545 are measured using the photothermal technique. The thermal anisotropy is studied by comparing our measurements with the result from in-plane measurements. The porosity dependence of thermal conductivity of Xerogel is studied by 3o technique. The fast drop in thermal conductivity is explained as the result of porosity and thermal contact in solid phase. A scaling rule of thermal conductivity as a function of porosity is proposed to the show the tradeoff between the thermal and the electrical properties. The possible impact of integrating low k materials in an interconnect structure is evaluated. The effective thermal conductivity of polymeric thin films as thin as 70 A is measured by 3o technique. The interfacial thermal resistances of Al/polymer/Si sandwich structure are found to be about 2 to 10 times larger than that of Al/SiO2/Si and the bulk thermal conductivities of polymers are found to be about 5 to 10 times smaller than that of SiO 2. The thermal conductivity of amorphous material is explained using the minimum thermal length model. The interfacial thermal resistance is explained using the acoustic and diffuse mismatch models as well as roughness and inelastic scattering at the interface.

Thermal Characterization of Nanostructures and Advanced Engineered Materials

NASA Astrophysics Data System (ADS)

Goyal, Vivek Kumar

Continuous downscaling of Si complementary metal-oxide semiconductor (CMOS) technology and progress in high-power electronics demand more efficient heat removal techniques to handle the increasing power density and rising temperature of hot spots. For this reason, it is important to investigate thermal properties of materials at nanometer scale and identify materials with the extremely large or extremely low thermal conductivity for applications as heat spreaders or heat insulators in the next generation of integrated circuits. The thin films used in microelectronic and photonic devices need to have high thermal conductivity in order to transfer the dissipated power to heat sinks more effectively. On the other hand, thermoelectric devices call for materials or structures with low thermal conductivity because the performance of thermoelectric devices is determined by the figure of merit Z=S2sigma/K, where S is the Seebeck coefficient, K and sigma are the thermal and electrical conductivity, respectively. Nanostructured superlattices can have drastically reduced thermal conductivity as compared to their bulk counterparts making them promising candidates for high-efficiency thermoelectric materials. Other applications calling for thin films with low thermal conductivity value are high-temperature coatings for engines. Thus, materials with both high thermal conductivity and low thermal conductivity are technologically important. The increasing temperature of the hot spots in state-of-the-art chips stimulates the search for innovative methods for heat removal. One promising approach is to incorporate materials, which have high thermal conductivity into the chip design. Two suitable candidates for such applications are diamond and graphene. Another approach is to integrate the high-efficiency thermoelectric elements for on-spot cooling. In addition, there is strong motivation for improved thermal interface materials (TIMs) for heat transfer from the heat-generating chip to heat-sinking units. This dissertation presents results of the experimental investigation and theoretical interpretation of thermal transport in the advanced engineered materials, which include thin films for thermal management of nanoscale devices, nanostructured superlattices as promising candidates for high-efficiency thermoelectric materials, and improved TIMs with graphene and metal particles as fillers providing enhanced thermal conductivity. The advanced engineered materials studied include chemical vapor deposition (CVD) grown ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on Si substrates, directly integrated nanocrystalline diamond (NCD) films on GaN, free-standing polycrystalline graphene (PCG) films, graphene oxide (GOx) films, and "pseudo-superlattices" of the mechanically exfoliated Bi2Te3 topological insulator films, and thermal interface materials (TIMs) with graphene fillers.

Characterization of the heat transfer properties of thermal interface materials

NASA Astrophysics Data System (ADS)

Fullem, Travis Z.

Physicists have studied the thermal conductivity of solids for decades. As a result of these efforts, thermal conduction in crystalline solids is well understood; there are detailed theories describing thermal conduction due to electrons and phonons. Phonon scattering and transmission at solid/solid interfaces, particularly above cryogenic temperatures, is not well understood and more work is needed in this area. The desire to solve engineering problems which require good thermal contact between mating surfaces has provided enhanced motivation for furthering the state of the art on this topic. Effective thermal management is an important design consideration in microelectronic systems. A common technique for removing excess heat from an electronic device is to attach a heatsink to the device; it is desirable to minimize the thermal resistance between the device and the heatsink. This can be accomplished by placing a thermal interface material (TIM) between the two surfaces. Due to the ever-increasing power densities found in electronic components, there is a desire to design better TIMs, which necessitates the ability to characterize TIM bondlines and to better understand the physics of heat conduction through TIM bondlines. A micro Fourier apparatus which employs Pt thin film thermometers of our design has been built and is capable of precisely quantifying the thermal resistance of thermal interface materials. In the present work several types of commercially available TIMs have been studied using this apparatus, including: greases, filled epoxies, and thermally conductive pads. In the case of filled epoxies, bondlines of various thicknesses, ranging from thirty microns to several hundred microns, have been measured. The microstructure of these bondlines has been investigated using optical microscopy and acoustic microscopy. Measured values of thermal conductivity are considered in terms of microstructural features such as percolation networks and filler particle depleted regions at the interface between the TIM and the substrate. The extent to which depleted regions contribute to the interfacial resistance is examined. The relationship between electrical and thermal resistance of the TIM bondline is considered in the context of comparing the relative contribution of electron and phonon heat conduction and how this correlates to microstructural features.

Chain Conformation near the Buried Interface in Nanoparticle-Stabilized Polymer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barkley, Deborah A.; Jiang, Naisheng; Sen, Mani

It is known that when nanoparticles are added to polymer thin films, they often migrate to the film-substrate interface and form an “immobile interfacial layer”, which has been believed as the origin of suppression of dewetting. We here report an alternative mechanism of dewetting suppression from the structural aspect of a polymer. Dodecane thiol-functionalized gold (Au) nanoparticles embedded in PS thin films prepared on Si substrates were used as a model. It was found that thermal annealing promotes irreversible polymer adsorption onto the substrate surface along with the surface migration of the nanoparticles. We also revealed that the surface migrationmore » causes additional nanoconfined space for the adsorbed polymer chains. As a result, the self-organization process of the strongly adsorbed polymer chains on the solid surface was so hindered that the chain conformations were randomized and expanded in the film normal direction. Here, the resultant chain conformation allows the interpenetration between free chains and the adsorbed chains, promoting adhesion and hence stabilizing the thin film.« less

Chain Conformation near the Buried Interface in Nanoparticle-Stabilized Polymer Thin Films

DOE PAGES

Barkley, Deborah A.; Jiang, Naisheng; Sen, Mani; ...

2017-09-26

It is known that when nanoparticles are added to polymer thin films, they often migrate to the film-substrate interface and form an “immobile interfacial layer”, which has been believed as the origin of suppression of dewetting. We here report an alternative mechanism of dewetting suppression from the structural aspect of a polymer. Dodecane thiol-functionalized gold (Au) nanoparticles embedded in PS thin films prepared on Si substrates were used as a model. It was found that thermal annealing promotes irreversible polymer adsorption onto the substrate surface along with the surface migration of the nanoparticles. We also revealed that the surface migrationmore » causes additional nanoconfined space for the adsorbed polymer chains. As a result, the self-organization process of the strongly adsorbed polymer chains on the solid surface was so hindered that the chain conformations were randomized and expanded in the film normal direction. Here, the resultant chain conformation allows the interpenetration between free chains and the adsorbed chains, promoting adhesion and hence stabilizing the thin film.« less

Fiber pushout and interfacial shear in metal-matrix composites

NASA Technical Reports Server (NTRS)

Koss, Donald A.; Hellmann, John R.; Kallas, M. N.

1993-01-01

Recent thin-slice pushout tests have suggested that MMC matrix-fiber interface failure processes depend not only on such intrinsic factors as bond strength and toughness, and matrix plasticity, but such extrinsic factors as specimen configuration, thermally-induced residual stresses, and the mechanics associated with a given test. After detailing the contrasts in fiber-pullout and fiber-pushout mechanics, attention is given to selected aspects of thin-slice fiber pushout behavior illustrative of the physical nature of interfacial shear response and its dependence on both intrinsic and extrinsic factors.

Thermal resistance of pressed contacts of aluminum and niobium at liquid helium temperatures

DOE PAGES

Dhuley, R. C.; Geelhoed, M. I.; Thangaraj, J. C. T.

2018-06-15

Here, we examine the resistance to heat flow across contacts of mechanically pressed aluminum and niobium near liquid helium temperatures for designing a thermally conducting joint of aluminum and superconducting niobium. Measurements in the temperature range of 3.5 K to 5.5 K show the thermal contact resistance to grow as a near-cubic function of decreasing temperature, indicating phonons to be the primary heat carriers across the interface. In the 4 kN to 14 kN range of pressing force the contact resistance shows linear drop with the increasing force, in agreement with the model of micro-asperity plastic deformation at pressed contacts.more » Several thermal contact resistance models as well as the phonon diffuse mismatch model of interface thermal resistance are compared with the experimental data. The diffuse mismatch model shows closest agreement. The joints are further augmented with thin foil of indium, which lowers the joint resistance by an order of magnitude. The developed joint has nearly 1 K*cm2/W of thermal resistance at 4.2 K, is demountable, and free of the thermally resistive interfacial alloy layer that typically exists at welded, casted, or soldered joints of dissimilar metals.« less

Thermal resistance of pressed contacts of aluminum and niobium at liquid helium temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhuley, R. C.; Geelhoed, M. I.; Thangaraj, J. C. T.

Here, we examine the resistance to heat flow across contacts of mechanically pressed aluminum and niobium near liquid helium temperatures for designing a thermally conducting joint of aluminum and superconducting niobium. Measurements in the temperature range of 3.5 K to 5.5 K show the thermal contact resistance to grow as a near-cubic function of decreasing temperature, indicating phonons to be the primary heat carriers across the interface. In the 4 kN to 14 kN range of pressing force the contact resistance shows linear drop with the increasing force, in agreement with the model of micro-asperity plastic deformation at pressed contacts.more » Several thermal contact resistance models as well as the phonon diffuse mismatch model of interface thermal resistance are compared with the experimental data. The diffuse mismatch model shows closest agreement. The joints are further augmented with thin foil of indium, which lowers the joint resistance by an order of magnitude. The developed joint has nearly 1 K*cm2/W of thermal resistance at 4.2 K, is demountable, and free of the thermally resistive interfacial alloy layer that typically exists at welded, casted, or soldered joints of dissimilar metals.« less

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Method for measuring thermal accommodation coefficients of gases on thin film surfaces using a MEMS sensor structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grau, Mario, E-mail: mario.grau@hs-rm.de; Völklein, Friedemann; Meier, Andreas

A method for measuring the thermal accommodation coefficient α for surface-/gas interfaces is presented. It allows the determination of α for thin films produced by a variety of deposition technologies, such as chemical vapor deposition, physical vapor deposition, and atomic layer deposition (ALD). The setup is based on two microelectromechanical systems (MEMS) Pirani sensors facing each other in a defined positioning. Because these MEMS sensors show a very high sensitivity in their individual molecular flow regimes, it is possible to measure the accommodation coefficients of gases without the disturbing influence of the transition regime. This paper presents the analytical backgroundmore » and the actual measurement principle. The results for air and nitrogen molecules on sputtered Au and Pt surfaces are presented.« less

Reconstruction of the Interface of Oxidatively Functionalized Polyethylene (PE-CO2H) and Derivatives on Heating. Revision.

DTIC Science & Technology

1987-03-01

contact angle with water frin the initial va: e 蕫b to the final value ’:,)3@, follows KinetiCs tnat suggest trit -no polar functional groups lisappear...PE-CO 2H in contact with liquiJs such as water and perfluorodecalin suggest that reconstruction is driven initially by ;iinimization of the...distance from the polymer- water interface can exchange ions with bulk water . Thermally reconstructed PE-CO2H is thus a new type of thin-film ion

High reliability bond program using small diameter aluminum wire

NASA Technical Reports Server (NTRS)

Macha, M.; Thiel, R. A.

1975-01-01

The program was undertaken to characterize the performance of small diameter aluminum wire ultrasonically bonded to conductors commonly encountered in hybrid assemblies, and to recommend guidelines for improving this performance. Wire, 25.4, 38.1 and 50.8 um (1, 1.5 and 2 mil), was used with bonding metallization consisting of thick film gold, thin film gold and aluminum as well as conventional aluminum pads on semiconductor chips. The chief tool for evaluating the performance was the double bond pull test in conjunction with a 72 hour - 150 C heat soak and -65 C to +150 C thermal cycling. In practice the thermal cycling was found to have relatively little effect compared to the heat soak. Pull strength will decrease after heat soak as a result of annealing of the aluminum wire; when bonded to thick film gold, the pull strength decreased by about 50% (weakening of the bond interface was the major cause of the reduction). Bonds to thin film gold lost about 30 - 40% of their initial pull strenth; weakening of the wire itself at the bond heel was the predominant cause. Bonds to aluminum substrate metallization lost only about 22%. Bonds between thick and thin film gold substrate metallization and semiconductor chips substantiated the previous conclusions but also showed that in about 20 to 25% of the cases, bond interface failure occurred at the semiconductor chip.

Direct Room Temperature Welding and Chemical Protection of Silver Nanowire Thin Films for High Performance Transparent Conductors.

PubMed

Ge, Yongjie; Duan, Xidong; Zhang, Meng; Mei, Lin; Hu, Jiawen; Hu, Wei; Duan, Xiangfeng

2018-01-10

Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation transparent electrode. However, the current Ag-NW thin films are often plagued by high NW-NW contact resistance and poor long-term stability, which can be largely attributed to the ill-defined polyvinylpyrrolidone (PVP) surface ligands and nonideal Ag-PVP-Ag contact at NW-NW junctions. Herein, we report a room temperature direct welding and chemical protection strategy to greatly improve the conductivity and stability of the Ag-NW thin films. Specifically, we use a sodium borohydride (NaBH 4 ) treatment process to thoroughly remove the PVP ligands and produce a clean Ag-Ag interface that allows direct welding of NW-NW junctions at room temperature, thus greatly improving the conductivity of the Ag-NW films, outperforming those obtained by thermal or plasmonic thermal treatment. We further show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer, the stability of the Ag-NW film can be greatly improved by 150-times compared with that of PVP-wrapped ones. Our studies demonstrate that a proper surface ligand design can effectively improve the conductivity and stability of Ag-NW thin films, marking an important step toward their applications in electronic and optoelectronic devices.

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Grunthaner, F. J.

1980-01-01

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Thermal contact conductance as a method of rectification in bulk materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayer, Robert A.

2016-08-01

A thermal rectifier that utilizes thermal expansion to directionally control interfacial conductance between two contacting surfaces is presented. The device consists of two thermal reservoirs contacting a beam with one rough and one smooth end. When the temperature of reservoir in contact with the smooth surface is raised, a similar temperature rise will occur in the beam, causing it to expand, thus increasing the contact pressure at the rough interface and reducing the interfacial contact resistance. However, if the temperature of the reservoir in contact with the rough interface is raised, the large contact resistance will prevent a similar temperaturemore » rise in the beam. As a result, the contact pressure will be marginally affected and the contact resistance will not change appreciably. Owing to the decreased contact resistance of the first scenario compared to the second, thermal rectification occurs. A parametric analysis is used to determine optimal device parameters including surface roughness, contact pressure, and device length. Modeling predicts that rectification factors greater than 2 are possible at thermal biases as small as 3 K. Lastly, thin surface coatings are discussed as a method to control the temperature bias at which maximum rectification occurs.« less

Degradation Characterization of Thermal Interface Greases

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVoto, Douglas J; Major, Joshua; Paret, Paul P

Thermal interface materials (TIMs) are used in power electronics packaging to minimize thermal resistance between the heat generating component and the heat sink. Thermal greases are one such class. The conformability and thin bond line thickness (BLT) of these TIMs can potentially provide low thermal resistance throughout the operation lifetime of a component. However, their performance degrades over time due to pump-out and dry-out during thermal and power cycling. The reliability performance of greases through operational cycling needs to be quantified to develop new materials with superior properties. NREL, in collaboration with DuPont, has performed thermal and reliability characterization ofmore » several commercially available thermal greases. Initial bulk and contact thermal resistance of grease samples were measured, and then the thermal degradation that occurred due to pump-out and dry-out during temperature cycling was monitored. The thermal resistances of five different grease materials were evaluated using NREL's steady-state thermal resistance tester based on the ASTM test method D5470. Greases were then applied, utilizing a 2.5 cm x 2.5 cm stencil, between invar and aluminum plates to compare the thermomechanical performance of the materials in a representative test fixture. Scanning Acoustic microscopy, thermal, and compositional analyses were performed periodically during thermal cycling from -40 degrees Celcius to 125 degrees Celcius. Completion of this characterization has allowed for a comprehensive evaluation of thermal greases both for their initial bulk and contact thermal performance, as well as their degradation mechanisms under accelerated thermal cycling conditions.« less

Degradation Characterization of Thermal Interface Greases: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVoto, Douglas J; Major, Joshua; Paret, Paul P

Thermal interface materials (TIMs) are used in power electronics packaging to minimize thermal resistance between the heat generating component and the heat sink. Thermal greases are one such class. The conformability and thin bond line thickness (BLT) of these TIMs can potentially provide low thermal resistance throughout the operation lifetime of a component. However, their performance degrades over time due to pump-out and dry-out during thermal and power cycling. The reliability performance of greases through operational cycling needs to be quantified to develop new materials with superior properties. NREL, in collaboration with DuPont, has performed thermal and reliability characterization ofmore » several commercially available thermal greases. Initial bulk and contact thermal resistance of grease samples were measured, and then the thermal degradation that occurred due to pump-out and dry-out during temperature cycling was monitored. The thermal resistances of five different grease materials were evaluated using NREL's steady-state thermal resistance tester based on the ASTM test method D5470. Greases were then applied, utilizing a 2.5 cm x 2.5 cm stencil, between invar and aluminum plates to compare the thermomechanical performance of the materials in a representative test fixture. Scanning Acoustic microscopy, thermal, and compositional analyses were performed periodically during thermal cycling from -40 degrees Celcius to 125 degrees Celcius. Completion of this characterization has allowed for a comprehensive evaluation of thermal greases both for their initial bulk and contact thermal performance, as well as their degradation mechanisms under accelerated thermal cycling conditions.« less

Degradation Characterization of Thermal Interface Greases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Major, Joshua; Narumanchi, Sreekant V; Paret, Paul P

Thermal interface materials (TIMs) are used in power electronics packaging to minimize thermal resistance between the heat generating component and the heat sink. Thermal greases are one such class. The conformability and thin bond line thickness (BLT) of these TIMs can potentially provide low thermal resistance throughout the operation lifetime of a component. However, their performance degrades over time due to pump-out and dry-out during thermal and power cycling. The reliability performance of greases through operational cycling needs to be quantified to develop new materials with superior properties. NREL, in collaboration with DuPont, has performed thermal and reliability characterization ofmore » several commercially available thermal greases. Initial bulk and contact thermal resistance of grease samples were measured, and then the thermal degradation that occurred due to pump-out and dry-out during temperature cycling was monitored. The thermal resistances of five different grease materials were evaluated using NREL's steady-state thermal resistance tester based on the ASTM test method D5470. Greases were then applied, utilizing a 2.5 cm x 2.5 cm stencil, between invar and aluminum plates to compare the thermomechanical performance of the materials in a representative test fixture. Scanning Acoustic microscopy, thermal, and compositional analyses were performed periodically during thermal cycling from -40 degrees C to 125 degrees C. Completion of this characterization has allowed for a comprehensive evaluation of thermal greases both for their initial bulk and contact thermal performance, as well as their degradation mechanisms under accelerated thermal cycling conditions.« less

Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)-8-hydroxy-5-nitrosoquinolate nano-sized thin films: characterization and factors optimization.

PubMed

Haggag, Sawsan M S; Farag, A A M; Abdel Refea, M

2013-02-01

Nano Al(III)-8-hydroxy-5-nitrosoquinolate [Al(III)-(HNOQ)(3)] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27-71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current-voltage (I-V) characteristics of [Al(III)-(HNOQ)(3)]/p-Si heterojunction was measured at room temperature. The forward and reverse I-V characteristics were analyzed. The calculated zero-bias barrier height (Φ(b)) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (N(ss)) was obtained. Copyright © 2012 Elsevier B.V. All rights reserved.

Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application

DOEpatents

Barbee, Jr., Troy W.; Bajt, Sasa

2002-01-01

The reflectivity and thermal stability of Mo/Si (molybdenum/silicon) multilayer films, used in soft x-ray and extreme ultraviolet region, is enhanced by deposition of a thin layer of boron carbide (e.g., B.sub.4 C) between alternating layers of Mo and Si. The invention is useful for reflective coatings for soft X-ray and extreme ultraviolet optics, multilayer for masks, coatings for other wavelengths and multilayers for masks that are more thermally stable than pure Mo/Si multilayers

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

NASA Astrophysics Data System (ADS)

Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

2011-01-01

Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

Long-wavelength Instability in Surface-tension-driven Bénard Convection

NASA Astrophysics Data System (ADS)

van Hook, Stephen J.

1997-03-01

Laboratory experiments and numerical simulations reveal that a liquid layer heated from below and possessing a free upper surface can undergo a long-wavelength deformational instability that causes rupture of the interface.(S. J. VanHook, M. F. Schatz, W. D. McCormick, J. B. Swift, and H. L. Swinney, Phys. Rev. Lett.) 75, 4397 (1995). Depending on the depth and thermal conductivity of the liquid and the overlying gas layer, the interface can rupture downwards and form a dry spot or rupture upwards and form a high spot. This long-wavelength instability competes with the formation of Bénard hexagons for thin or viscous liquid layers, or for liquid layers in microgravity.

High-performance formamidinium-based perovskite solar cells via microstructure-mediated δ-to-α phase transformation

DOE PAGES

Liu, Tanghao; Zong, Yingxia; Zhou, Yuanyuan; ...

2017-03-14

The δ → α phase transformation is a crucial step in the solution-growth process of formamidinium-based lead triiodide (FAPbI 3) hybrid organic–inorganic perovskite (HOIP) thin films for perovskite solar cells (PSCs). Because the addition of cesium (Cs) stabilizes the α phase of FAPbI 3-based HOIPs, here our research focuses on FAPbI 3(Cs) thin films. We show that having a large grain size in the δ-FAPbI 3(Cs) non-perovskite intermediate films is essential for the growth of high-quality α-FAPbI 3(Cs) HOIP thin films. Here grain coarsening and phase transformation occur simultaneously during the thermal annealing step. A large starting grain size inmore » the δ-FAPbI 3(Cs) thin films suppresses grain coarsening, precluding the formation of voids at the final α-FAPbI 3(Cs)–substrate interfaces. PSCs based on the interface void-free α-FAPbI 3(Cs) HOIP thin films are much more efficient and stable in the ambient atmosphere. This interesting finding inspired us to develop a simple room-temperature aging method for preparing coarse-grained δ-FAPbI 3(Cs) intermediate films, which are subsequently converted to coarse-grained, high-quality α-FAPbI 3(Cs) HOIP thin films. As a result, this study highlights the importance of microstructure meditation in the processing of formamidinium-based PSCs.« less

Organic ferroelectric evaporator with substrate cooling and in situ transport capabilities.

PubMed

Foreman, K; Labedz, C; Shearer, M; Adenwalla, S

2014-04-01

We report on the design, operation, and performance of a thermal evaporation chamber capable of evaporating organic thin films. Organic thin films are employed in a diverse range of devices and can provide insight into fundamental physical phenomena. However, growing organic thin films is often challenging and requires very specific deposition parameters. The chamber presented here is capable of cooling sample substrates to temperatures below 130 K and allows for the detachment of the sample from the cooling stage and in situ transport. This permits the use of multiple deposition techniques in separate, but connected, deposition chambers without breaking vacuum and therefore provides clean, well characterized interfaces between the organic thin film and any adjoining layers. We also demonstrate a successful thin film deposition of an organic material with a demanding set of deposition parameters, showcasing the success of this design.

A novel X-ray photoelectron spectroscopy study of the Al/SiO2 interface

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Vasquez, R. P.; Grunthaner, F. J.; Zamani, N.; Maserjian, J.

1985-01-01

The nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is reported. Both X-ray phototelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing at 450 C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and related interfaces.

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Jeong-Wan; Park, Sung Kyu, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr

2014-07-28

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies bymore » electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.« less

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air- oxidized samples. However, peak intensity variations were observed due to interface interdiffusion.

Cracking of coated materials under transient thermal stresses

NASA Technical Reports Server (NTRS)

Rizk, A. A.; Erdogan, Fazil

1988-01-01

The crack problem for a relatively thin layer bonded to a very thick substrate under thermal shock conditions is considered. The effect of surface cooling rate is studied by assuming the temperature boundary condition to be a ramp function. Among the crack geometries considered are the edge crack in the coating layer, the broken layer, the edge crack going through the interface, the undercoat crack in the substrate and the embedded crack crossing the interface. The primary calculated quantity is the stress intensity factor at various singular points and the main variables are the relative sizes and locations of cracks, the time, and the duration of the cooling ramp. The problem is solved and rather extensive results are given for two material pairs, namely a stainless steel layer welded on a ferritic medium and a ceramic coating on a steel substrate.

Cracking of coated materials under transient thermal stresses

NASA Technical Reports Server (NTRS)

Rizk, A. A.; Erdogan, F.

1989-01-01

The crack problem for a relatively thin layer bonded to a very thick substrate under thermal shock conditions is considered. The effect of surface cooling rate is studied by assuming the temperature boundary condition to be a ramp function. Among the crack geometries considered are the edge crack in the coating layer, the broken layer, the edge crack going through the interface, the undercoat crack in the substrate and the embedded crack crossing the interface. The primary calculated quantity is the stress intensity factor at various singular points and the main variables are the relative sizes and locations of cracks, the time, and the duration of the cooling ramp. The problem is solved and rather extensive results are given for two material pairs, namely a stainless steel layer welded on a ferritic medium and a ceramic coating on a steel substrate.

Carrier interactions and porosity initiated reversal of temperature dependence of thermal conduction in nanoscale tin films

NASA Astrophysics Data System (ADS)

Kaul, Pankaj B.; Prakash, Vikas

2014-01-01

Recently, tin has been identified as an attractive electrode material for energy storage/conversion technologies. Tin thin films have also been utilized as an important constituent of thermal interface materials in thermal management applications. In this regards, in the present paper, we investigate thermal conductivity of two nanoscale tin films, (i) with thickness 500 ± 50 nm and 0.45% porosity and (ii) with thickness 100 ± 20 nm and 12.21% porosity. Thermal transport in these films is characterized over the temperature range from 40 K-310 K, using a three-omega method for multilayer configurations. The experimental results are compared with analytical predictions obtained by considering both phonon and electron contributions to heat conduction as described by existing frequency-dependent phenomenological models and BvK dispersion for phonons. The thermal conductivity of the thicker tin film (500 nm) is measured to be 46.2 W/m-K at 300 K and is observed to increase with reduced temperatures; the mechanisms for thermal transport are understood to be governed by strong phonon-electron interactions in addition to the normal phonon-phonon interactions within the temperature range 160 K-300 K. In the case of the tin thin film with 100 nm thickness, porosity and electron-boundary scattering supersede carrier interactions, and a reversal in the thermal conductivity trend with reduced temperatures is observed; the thermal conductivity falls to 1.83 W/m-K at 40 K from its room temperature value of 36.1 W/m-K. In order to interpret the experimental results, we utilize the existing analytical models that account for contributions of electron-boundary scattering using the Mayadas-Shatzkes and Fuchs-Sondheimer models for the thin and thick films, respectively. Moreover, the effects of porosity on carrier transport are included using a previous treatment based on phonon radiative transport involving frequency-dependent mean free paths and the morphology of the nanoporous channels. The systematic modeling approach presented in here can, in general, also be utilized to understand thermal transport in semi-metals and semiconductor nano-porous thin films and/or phononic nanocrystals.

Morphology and Surface Energy of a Si Containing Semifluorinated Di-block Copolymer Thin Films.

NASA Astrophysics Data System (ADS)

Shrestha, Umesh; Clarson, Stephen; Perahia, Dvora

2013-03-01

The structure and composition of an interface influence stability, adhesiveness and response to external stimuli of thin polymeric films. Incorporation of fluorine affects interfacial energy as well as thermal and chemical stability of the layers. The incompatibility between the fluorinated and non-fluorinated blocks induces segregation that leads to long range correlations where the tendency of the fluorine to migrate to interfaces impacts the surface tension of the films. Concurrently Si in a polymeric backbone enhances the flexibility of polymeric chains. Our previous studies of poly trifluoro propyl methyl siloxane-polystyrene thin films with SiF fraction 0.03-0.5 as a function of temperature have shown that the SiF block drives layering parallel to the surface of the diblock. Here in we report the structure and interfacial energies of SiF-PS in the plane of the films, as a function of the volume fraction of the SiF block obtained from Atomic Force microscopy and contact angle measurement studies. This work is supported by NSF DMR - 0907390

Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polster, S.; Jank, M. P. M.; Frey, L.

2016-01-14

The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussedmore » with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.« less

Diamond-like carbon (DLC) thin film bioelectrodes: effect of thermal post-treatments and the use of Ti adhesion layer.

PubMed

Laurila, Tomi; Rautiainen, Antti; Sintonen, Sakari; Jiang, Hua; Kaivosoja, Emilia; Koskinen, Jari

2014-01-01

The effect of thermal post-treatments and the use of Ti adhesion layer on the performance of thin film diamond like carbon bioelectrodes (DLC) have been investigated in this work. The following results were obtained: (i) The microstructure of the DLC layer after the deposition was amorphous and thermal annealing had no marked effect on the structure, (ii) formation of oxygen containing SiOx and Ti[O,C] layers were detected at the Si/Ti and Ti/DLC interfaces with the help of transmission electron microscope (TEM), (iii) thermal post-treatments increased the polar fraction of the surface energy, (iv) cyclic voltammetry (CV) measurements showed that the DLC films had wide water windows and were stable in contact with dilute sulphuric acid and phosphate buffered saline (PBS) solutions, (v) use of Ti interlayer between Pt(Ir) microwire and DLC layer was crucial for the electrodes to survive the electrochemical measurements without the loss of adhesion of the DLC layer, (vi) DLC electrodes with small exposed Pt areas were an order of magnitude more sensitive towards dopamine than Pt electrodes and (vii) thermal post-treatments did not markedly change the electrochemical behavior of the electrodes despite the significant increase in the polar nature of the surfaces. It can be concluded that thin DLC bioelectrodes are stable under physiological conditions and can detect dopamine in micro molar range, but their sensitivity must be further improved. © 2013 Elsevier B.V. All rights reserved.

Oxidation behavior of thermal barrier coating systems with Al interlayer under isothermal loading

NASA Astrophysics Data System (ADS)

Ali, I.; Sokołowski, P.; Grund, T.; Pawłowski, L.; Lampke, T.

2018-06-01

In the present study, the phenomena related to the Thermally Grown Oxides (TGO) in atmospheric plasma sprayed Thermal Barrier Coatings (TBCs) are discussed. CoNiCrAlY bond coatings were sprayed on Inconel 600 substrates. Subsequently, thin Al layers were deposited by DC-Magnetron sputtering. Finally, yttria-stabilized zirconia (YSZ) top coatings were deposited to form a three-layered TBC system. The thus produced aluminum interlayer containing thermal barrier coatings (Al-TBC) were subjected to isothermal exposure with different holding times at 1150 °C and compared with reference TBCs of the same kind, but without Al interlayers (R-TBC). The oxide film formation in the interface between bond coating (BC) and top coating (TC) was investigated by scanning electron microscope (SEM) after 100 and 300 h of high temperature isothermal exposure. The growth of this oxide film as a function of the isothermal exposure time was studied. As a result, the designed Al-TBC system exhibited better oxidation resistance in the BC/TC interface than the two-layered R-TBC system. This was lead back to the Al enrichment, which slows down the formation rate of transition metal oxides during thermal loading.

Interplay of point defects, biaxial strain, and thermal conductivity in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Wiedigen, S.; Kramer, T.; Feuchter, M.; Knorr, I.; Nee, N.; Hoffmann, J.; Kamlah, M.; Volkert, C. A.; Jooss, Ch.

2012-02-01

Separating out effects of point defects and lattice strain on thermal conductivity is essential for improvement of thermoelectric properties of SrTiO3. We study relations between defects generated during deposition, induced lattice strain, and their impact on thermal conductivity κ in homoepitaxial SrTiO3 films prepared by ion-beam sputtering. Lowering the deposition temperature gives rise to lattice expansion by enhancement of point defect density which increases the hardness of the films. Due to a fully coherent substrate-film interface, the lattice misfit induces a large biaxial strain. However, we can show that the temperature dependence of κ is mainly sensitive on the defect concentration.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

NASA Astrophysics Data System (ADS)

Chen, H.-Y.; Huang, Y.-R.; Shih, H.-Y.; Chen, M.-J.; Sheu, J.-K.; Sun, C.-K.

2017-11-01

Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.

Phase coexistence and pinning of charge density waves by interfaces in chromium

NASA Astrophysics Data System (ADS)

Singer, A.; Patel, S. K. K.; Uhlíř, V.; Kukreja, R.; Ulvestad, A.; Dufresne, E. M.; Sandy, A. R.; Fullerton, E. E.; Shpyrko, O. G.

2016-11-01

We study the temperature dependence of the charge density wave (CDW) in a chromium thin film using x-ray diffraction. We exploit the interference between the CDW satellite peaks and Laue oscillations to determine the amplitude, the phase, and the period of the CDW. We find discrete half-integer periods of CDW in the film and switching of the number of periods by one upon cooling/heating with a thermal hysteresis of 20 K. The transition between different CDW periods occurs over a temperature range of 30 K, slightly larger than the width of the thermal hysteresis. A comparison with simulations shows that the phase transition occurs as a variation of the volume fraction of two distinct phases with well-defined periodicities. The phase of the CDW is constant for all temperatures, and we attribute it to strong pinning of the CDW by the mismatch-induced strain at the film-substrate interface.

Break-up dynamics of fluctuating liquid threads

PubMed Central

Petit, Julien; Rivière, David; Kellay, Hamid; Delville, Jean-Pierre

2012-01-01

The thinning dynamics of a liquid neck before break-up, as may happen when a drop detaches from a faucet or a capillary, follows different rules and dynamic scaling laws depending on the importance of inertia, viscous stresses, or capillary forces. If now the thinning neck reaches dimensions comparable to the thermally excited interfacial fluctuations, as for nanojet break-up or the fragmentation of thermally annealed nanowires, these fluctuations should play a dominant role according to recent theory and observations. Using near-critical interfaces, we here fully characterize the universal dynamics of this thermal fluctuation-dominated regime and demonstrate that the cross-over from the classical two-fluid pinch-off scenario of a liquid thread to the fluctuation-dominated regime occurs at a well-defined neck radius proportional to the thermal length scale. Investigating satellite drop formation, we also show that at the level of the cross-over between these two regimes it is more probable to produce monodisperse droplets because fluctuation-dominated pinch-off may allow the unique situation where satellite drop formation can be inhibited. Nonetheless, the interplay between the evolution of the neck profiles from the classical to the fluctuation-dominated regime and the satellites’ production remains to be clarified. PMID:23090994

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

NASA Astrophysics Data System (ADS)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Thermal debonding of ceramic brackets: an in vitro study.

PubMed

Crooks, M; Hood, J; Harkness, M

1997-02-01

Thermal debonding has been developed to overcome the problems of enamel damage and high forces when debonding ceramic orthodontic brackets. However, the temperature changes with thermal debonding have the potential to damage the tooth tissues. The principal aims of this study are, first, to investigate the effects of resin type, resin thickness, and debonding force on the temperature changes in human premolars during thermal debonding of ceramic brackets and, second, to record the sites of bond failure and damage to the tooth surface. Ceramic brackets were attached to each specimen by using one of four types of bonding resin in a controlled thick or thin resin layer. The ceramic debonding unit (Dentaurum, Pforzheim, Germany) was used to thermally debond the brackets with either a 40 or 80 Nmm torsional force. Higher temperature changes at the pulpal wall (> 10 degrees C in some 40 Nmm torsional force specimens) always occurred with Concise (3M Dental Products, St. Paul, Minn.) and Transbond (Unitek/3M Dental Products, Monrovia, Calif.) resins, and lower temperature changes (< 5 degrees C) with Quasar (Rocky Mountain Orthodontics, Denver, Colo.) and Ortho. B.S. (Dentaurum, Pforzheim, Germany) resins. In general, resin thickness was not significantly associated with buccal surface or pulpal wall temperature changes. However, temperature changes at the pulpal wall were significantly associated with the temperature changes at the buccal surface (r = 0.76), with the temperature of the thermal debonder blade for thin resin layer specimens (r = 0.50), and the time required to debond the bracket for both thick (r = 0.74) and thin (r = 0.63) resin layer specimens. In most specimens, the site of bond failure occurred at the bracket-resin interface. There was no evidence of enamel damage after bracket removal.

Nanostructured PdO Thin Film from Langmuir-Blodgett Precursor for Room-Temperature H2 Gas Sensing.

PubMed

Choudhury, Sipra; Betty, C A; Bhattacharyya, Kaustava; Saxena, Vibha; Bhattacharya, Debarati

2016-07-06

Nanoparticulate thin films of PdO were prepared using the Langmuir-Blodgett (LB) technique by thermal decomposition of a multilayer film of octadecylamine (ODA)-chloropalladate complex. The stable complex formation of ODA with chloropalladate ions (present in subphase) at the air-water interface was confirmed by the surface pressure-area isotherm and Brewster angle microscopy. The formation of nanocrystalline PdO thin film after thermal decomposition of as-deposited LB film was confirmed by X-ray diffraction and Raman spectroscopy. Nanocrystalline PdO thin films were further characterized by using UV-vis and X-ray photoelectron spectroscopic (XPS) measurements. The XPS study revealed the presence of prominent Pd(2+) with a small quantity (18%) of reduced PdO (Pd(0)) in nanocrystalline PdO thin film. From the absorption spectroscopic measurement, the band gap energy of PdO was estimated to be 2 eV, which was very close to that obtained from specular reflectance measurements. Surface morphology studies of these films using atomic force microscopy and field-emission scanning electron microscopy indicated formation of nanoparticles of size 20-30 nm. These PdO film when employed as a chemiresistive sensor showed H2 sensitivity in the range of 30-4000 ppm at room temperature. In addition, PdO films showed photosensitivity with increase in current upon shining of visible light.

Tuning the Seebeck effect in C60-based hybrid thermoelectric devices through temperature-dependent surface polarization and thermally-modulated interface dipoles.

PubMed

Liu, Yuchun; Xu, Ling; Zhao, Chen; Shao, Ming; Hu, Bin

2017-06-07

Fullerene (C 60 ) is an important n-type organic semiconductor with high electron mobility and low thermal conductivity. In this work, we report the experimental results on the tunable Seebeck effect of C 60 hybrid thin-film devices by adopting different oxide layers. After inserting n-type high-dielectric constant titanium oxide (TiO x ) and zinc oxide (ZnO) layers, we observed a significantly enhanced n-type Seebeck effect in oxide/C 60 hybrid devices with Seebeck coefficients of -5.8 mV K -1 for TiO x /C 60 and -2.08 mV K -1 for ZnO/C 60 devices at 100 °C, compared with the value of -400 μV K -1 for the pristine C 60 device. However, when a p-type nickel oxide (NiO) layer is inserted, the C 60 hybrid devices show a p-type to n-type Seebeck effect transition when the temperature increases. The remarkable Seebeck effect and change in Seebeck coefficient in different oxide/C 60 hybrid devices can be attributed to two reasons: the temperature-dependent surface polarization difference and thermally-dependent interface dipoles. Firstly, the surface polarization difference due to temperature-dependent electron-phonon coupling can be enhanced by inserting an oxide layer and functions as an additional driving force for the Seebeck effect development. Secondly, thermally-dependent interface dipoles formed at the electrode/oxide interface play an important role in modifying the density of interface states and affecting the charge diffusion in hybrid devices. The surface polarization difference and interface dipoles function in the same direction in hybrid devices with TiO x and ZnO dielectric layers, leading to enhanced n-type Seebeck effect, while the surface polarization difference and interface dipoles generate the opposite impact on electron diffusion in ITO/NiO/C 60 /Al, leading to a p-type to n-type transition in the Seebeck effect. Therefore, inserting different oxide layers could effectively modulate the Seebeck effect of C 60 -based hybrid devices through the surface polarization difference and thermally-dependent interface dipoles, which represents an effective approach to tune the vertical Seebeck effect in organic functional devices.

Phase evolution and thermal properties of yttria-stabilized hafnia nano-coatings deposited on alumina

NASA Astrophysics Data System (ADS)

Rubio, Ernesto Javier

High-temperature coatings are critical to the future power-generation systems and industries. Thermal barrier coatings (TBCs), which are usually the ceramic materials applied as thin coatings, protect engine components and allow further increase in engine temperatures for higher efficiency. Thus, the durability and reliability of the coating systems have to be more robust compared to current natural gas based engines. While a near and mid-term target is to develop TBC architecture with a 1300 °C surface temperature tolerance, a deeper understanding of the structure evolution and thermal behavior of the TBC-bond coat interface, specifically the thermally grown oxide (TGO), is of primary importance. In the present work, attention is directed towards yttria-stabilized hafnia (YSH) coatings on alumina (α-Al2O 3) to simulate the TBC-TGO interface and understand the phase evolution, microstructure and thermal oxidation of the coatings. YSH coatings were grown on α-Al2O3 substrates by sputter deposition by varying coating thickness in a wide range ˜30-1000 nm. The effect of coating thickness on the structure, morphology and the residual stress has been investigated using X-ray diffraction (XRD) and high resolution scanning electron microscopy (SEM). Thermal oxidation behavior of the coatings has been evaluated using the isothermal oxidation measurements under static conditions. X-ray diffraction analyses revealed the existence of monoclinic hafnia phase for relatively thin coatings indicating that the interfacial phenomena are dominant in phase stabilization. The evolution towards pure stabilized cubic phase of hafnia with the increasing coating thickness is observed. The SEM results indicate the changes in morphology of the coatings; the average grain size increases from 15 to 500 nm with increasing thickness. Residual stress was calculated employing XRD using the variable ψ-angle. Relation between residual stress and structural change is also studied. The results obtained on the thermal oxidation behavior indicate that the YSH coatings exhibit initial mass gain in the first 6 hours and sustained structure for extended hours of thermal treatment.

Reduction of thermal conductivity in phononic nanomesh structures.

PubMed

Yu, Jen-Kan; Mitrovic, Slobodan; Tham, Douglas; Varghese, Joseph; Heath, James R

2010-10-01

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications and in the cooling of integrated circuits. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity.

Effects of optical design modifications on thermal performance of a highly reflective HfO2/SiO2/TiO2 three material coating

NASA Astrophysics Data System (ADS)

Ocak, M.; Sert, C.; Okutucu-Özyurt, T.

2018-02-01

Effects of layer thickness modifications on laser induced temperature distribution inside three material, highly reflective thin film coatings are studied with numerical simulations. As a base design, a 21 layer coating composed of HfO2, SiO2 and TiO2 layers of quarter wave thickness is considered. First, the laser induced temperature distribution in this base design is obtained. Then the layer thicknesses of the base design are modified and the corresponding temperature distributions in four alternative non-quarter wave coatings are evaluated. The modified thicknesses are determined using an in-house code developed to shift the electric field intensity (EFI) peak from the first high/low layer interface towards the adjacent low index layer that has a higher thermal conductivity, hence, higher laser damage resistance. Meanwhile, the induced increase in the EFI peak is kept at a user defined upper limit. The laser endurance of the base and alternative designs are compared in terms of their estimated temperature distributions. The results indicated that both the peak temperature and the highest interface temperature are decreased by at least 32%, in non-dimensional form, when alternative designs are used instead of the base design. The total reflection of the base design is only decreased from 99.8% to at most 99.4% when alternative designs are used. The study is proved to be successful in improving the laser endurance of three material thin film coatings by lowering the peak and interface temperatures.

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

NASA Astrophysics Data System (ADS)

Araga, Yuuki; Shimamoto, Haruo; Melamed, Samson; Kikuchi, Katsuya; Aoyagi, Masahiro

2018-04-01

Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.

Noncontacting acoustics-based temperature measurement techniques in rapid thermal processing

NASA Astrophysics Data System (ADS)

Lee, Yong J.; Chou, Ching-Hua; Khuri-Yakub, Butrus T.; Saraswat, Krishna C.

1991-04-01

Temperature measurement of silicon wafers based on the temperature dependence of acoustic waves is studied. The change in the temperature-dependent dispersion relations of the plate modes through the wafer can be exploited to provide a viable temperature monitoring scheme with advantages over both thermocouples and pyrometers. Velocity measurements of acoustic waves through a thin layer of ambient directly above the wafer provides the temperature of the wafer-ambient interface. 1.

Photoemission Spectroscopy Studies of Methylammonium Lead Iodide Perovskite Thin Films and Interfaces

NASA Astrophysics Data System (ADS)

Thibau, Emmanuel S.

Organometal halide perovskites have recently emerged as promising materials for fundamentally low-cost, high-performance optoelectronics. In this thesis, we utilize thermal co-evaporation of PbI2 and CH3NH 3 I to fabricate thin films of CH3NH3PbI 3. We first investigate the effect of stoichiometry on some of its structural, optical and electronic properties. Then, we study the energy level alignment of CH3NH3PbI3 with 6 organic semiconductors, revealing good agreement between the data and the theory of vacuum level alignment. Finally, the interface formed between CH3NH 3PbI3 and MoO3 is examined. The findings suggest migration of iodide species into the oxide layer, resulting in deterioration of its chemical and electronic properties. Insertion of an organic interlayer is shown to mitigate these undesirable effects. The results of this work could be of use in device engineering, where knowledge of such interfacial phenomena is of utmost importance in achieving optimized device structures.

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

NASA Astrophysics Data System (ADS)

Furuta, Mamoru; Kamada, Yudai; Hiramatsu, Takahiro; Li, Chaoyang; Kimura, Mutsumi; Fujita, Shizuo; Hirao, Takashi

2011-03-01

The positive bias instabilities of the zinc oxide thin-film transistors (ZnO TFTs) with a SiOx/SiNx-stacked gate insulator have been investigated. The film quality of a gate insulator of SiOx, which forms an interface with the ZnO channel, was varied by changing the gas mixture ratio of SiH4/N2O/N2 during plasma-enhanced chemical vapor deposition. The positive bias stress endurance of ZnO TFT strongly depended on the deposition condition of the SiOx gate insulator. From the relaxations of the transfer curve shift after imposition of positive bias stress, transfer curves could not be recovered completely without any thermal annealing. A charge trapping in a gate insulator rather than that in bulk ZnO and its interface with a gate insulator is a dominant instability mechanism of ZnO TFTs under positive bias stress.

Pressurization of a Flightweight, Liquid Hydrogen Tank: Evaporation & Condensation at a Liquid/Vapor Interface

NASA Technical Reports Server (NTRS)

Stewart, Mark E. M.

2017-01-01

This paper presents an analysis and simulation of evaporation and condensation at a motionless liquid/vapor interface. A 1-D model equation, emphasizing heat and mass transfer at the interface, is solved in two ways, and incorporated into a subgrid interface model within a CFD simulation. Simulation predictions are compared with experimental data from the CPST Engineering Design Unit tank, a cryogenic fluid management test tank in 1-g. The numerical challenge here is the physics of the liquid/vapor interface; pressurizing the ullage heats it by several degrees, and sets up an interfacial temperature gradient that transfers heat to the liquid phase-the rate limiting step of condensation is heat conducted through the liquid and vapor. This physics occurs in thin thermal layers O(1 mm) on either side of the interface which is resolved by the subgrid interface model. An accommodation coefficient of 1.0 is used in the simulations which is consistent with theory and measurements. This model is predictive of evaporation/condensation rates, that is, there is no parameter tuning.

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; DeCapua, Matthew C.; Player, Gabriel; Heiman, Don

2016-10-01

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

Magnetic properties of low-moment ferrimagnetic Heusler Cr 2CoGa thin films grown by molecular beam epitaxy

DOE PAGES

Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; ...

2016-10-31

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr 2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87more » meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.« less

Stress and plasticity in Cu thin films

NASA Astrophysics Data System (ADS)

Weihnacht, Volker; Brückner, Winfried

1999-11-01

Aim of the work was to get more detailed knowledge about the processes of plasticity in thin Cu films. For this purpose, stress measurements and microstructural investigations have been done on 535nm thick Cu films on oxidized Si substrates. The film stress was measured by wafer-curvature technique using a home-made laser-optical apparatus. This apparatus allowed four-point bending experiments additionally to thermal cycling. It turned out that applied bending strains even higher than 0.5% did not leave significant plastic strains after relief of bending stress. It is concluded, that the elastic interaction of parallel dislocations at the film-substrate interface may play an important role in strain hardening even after small plastic strains.

Heat transport by phonons in crystalline materials and nanostructures

NASA Astrophysics Data System (ADS)

Koh, Yee Kan

This dissertation presents experimental studies of heat transport by phonons in crystalline materials and nanostructures, and across solid-solid interfaces. Particularly, this dissertation emphasizes advancing understanding of the mean-free-paths (i.e., the distance phonons propagate without being scattered) of acoustic phonons, which are the dominant heat carriers in most crystalline semiconductor nanostructures. Two primary tools for the studies presented in this dissertation are time-domain thermoreflectance (TDTR) for measurements of thermal conductivity of nanostructures and thermal conductance of interfaces; and frequency-domain thermoreflectance (FDTR), which I developed as a direct probe of the mean-free-paths of dominant heat-carrying phonons in crystalline solids. The foundation of FDTR is the dependence of the apparent thermal conductivity on the frequency of periodic heat sources. I find that the thermal conductivity of semiconductor alloys (InGaP, InGaAs, and SiGe) measured by TDTR depends on the modulation frequency, 0.1 ≤ f ≤ 10 MHz, used in TDTR measurements. Reduction in the thermal conductivity of the semiconductor alloys at high f compares well to the reduction in the thermal conductivity of epitaxial thin films, indicating that frequency dependence and thickness dependence of thermal conductivity are fundamentally equivalent. I developed the frequency dependence of thermal conductivity into a convenient probe of phonon mean-free-paths, a technique which I call frequency-domain thermoreflectance (FDTR). In FDTR, I monitor the changes in the intensity of the reflected probe beam as a function of the modulation frequency. To facilitate the analysis of FDTR measurements, I developed a nonlocal theory for heat conduction by phonons at high heating frequencies. Calculations of the nonlocal theory confirm my experimental findings that phonons with mean-free-paths longer than two times the penetration depth do not contribute to the apparent thermal conductivity. I employed FDTR to study the mean-free-paths of acoustic phonons in Si1-xGex. I experimentally demonstrate that 40% of heat is carried in Si1-xGe x alloys by phonons with mean-free-path 0.5 ≤ ℓ ≤ 5 mum, and phonons with > 2 mum do not contribute to the thermal conductivity of Si. I employed TDTR and frequency-dependent TDTR to study scattering of long- and medium-wavelength phonons in two important thermoelectric materials embedded with nanoscale precipitates. I find that the through-thickness lattice thermal conductivity of (PbTe)1-x/(PbSe)x nanodot superlattices (NDSLs) approaches the thermal conductivity of bulk homogenous PbTe1-x Sex alloys with the same average composition. On the other hand, I find that 3% of ErAs nanoparticles embedded in InGaAs is sufficient to scatter most of the phonons in InGaAs that have intermediate mean-free-paths, and thus reduces the thermal conductivity of InGaAs below the alloy limit. I find that scattering by nanoparticles approach the geometrical limit and can be readily accounted for by an additional boundary scattering which depends on the concentration of nanoparticles. Finally, I studied the thermal conductance of Au/Ti/Graphene/SiO 2 interfaces by TDTR. I find that heat transport across the interface is dominated by phonons. Even though graphene is only one atomic layer thick, graphene interfaces should be treated as two discrete interfaces instead of one diffuse interface in thermal analysis, suggesting that direct transmission of phonons from Au to SiO2 is negligible. My study is important for thermal management of graphene devices.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using capacitance-voltage and conductance-voltage measurements. Special attention was given to the extraction of static dielectric constant of BST and STO from the multiple film stack. The K value was found to be sensitive to the input parameters such as dielectric constant and thickness of interface layers.

Thin transparent film characterization by photothermal reflectance (abstract)

NASA Astrophysics Data System (ADS)

Li Voti, R.; Wright, O. B.; Matsuda, O.; Larciprete, M. C.; Sibilia, C.; Bertolotti, M.

2003-01-01

Photothermal reflectance methods have been intensively applied to the nondestructive testing of opaque thin films [D. P. Almond and P. M. Patel, Photothermal Science and Techniques (Chapman and Hall, London, 1996); C. Bento and D. P. Almond, Meas. Sci. Technol. 6, 1022 (1995); J. Opsal, A. Rosencwaig, and D. Willenborg, Appl. Opt. 22, 3169 (1983)]. The basic principle is based on thermal wave interferometry: the opaque specimen is illuminated by a laser beam, periodically chopped at the frequency f, so as to generate a plane thermal wave in the surface region. This wave propagates in the film, approaches the rear interface (film-bulk), is partially reflected back, reaches the front surface, is again partially reflected back and so on, giving rise to thermal wave interference. A consequence of this interference is that the surface temperature may be enhanced (constructive interference) or reduced (destructive interference) by simply scanning the frequency f (that is, the thermal diffusion length μ=√D/πf ), so as to observe damped oscillations as a function of f; in practice only the first oscillation may be clearly resolved and used to measure either the film thickness d or the film thermal diffusivity D, and this situation occurs when μ≈d. In general, photothermal reflectance does not measure directly the surface temperature variation, but rather a directly related signal determined by the thermo-optic coefficients and the sample geometry; for detection it is common to monitor the optical reflectivity variation of a probe beam normally incident on the sample. If the thin film is partially transparent to the probe, the theory becomes more difficult [O. Matsuda and O. B. Wright, J. Opt. Soc. Am. B (in press)] and one should consider the probe beam multiple reflections in the thin film. The probe modulation is optically inhomogeneous due to the temperature-induced changes in refractive index. Although in the past the complexity of the analysis has impeded research in this field, we show how a general analytical method can be used to deal with photothermal reflectance data for transparent thin films. We apply this method to a thin film of silica on a silicon substrate [O. B. Wright, R. Li Voti, O. Matsuda, M. C. Larciprete, C. Sibilia, and M. Bertolotti, J. Appl. Phys. 91 5002 (2002)].

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

NASA Astrophysics Data System (ADS)

Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang

2017-06-01

Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb7Te3/Ge multilayer films by using a magnetron sputtering method. The 10 years’ data retention temperature is significantly increased compared with pure Sb7Te3. When the annealing temperature is above 250 °C, the Sb7Te3/Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

DTIC Science & Technology

2017-10-16

DARPA) or the U.S. Government. Report contains color. 14. ABSTRACT The objective of this project is to experimentally study the transient non ...the Metal Thin Film in TDTR ........................................ 14 4.3 Experimental Observation of the Frequency Filtering Effect...scale of the device layers and the high density of interfaces, non -diffusive heat conduction plays a critical role in thermal transport of GaN devices

Assessment of Thermal Dehydration Using the Human Eye: What is the Potential?

DTIC Science & Technology

2012-01-01

Kenefick a, Neil P. Walsh b, Matthew B. Fortes b, Marieh Esmaeelpour c,d, Samuel N. Cheuvront a,n a US Army Research Institute of Environmental Medicine...anhydrase inhibitors, which are commonly prescribed to glaucoma patients (van der Valk et al., 2005; World Heath Organization; 2009). Both types of...Deposition and thinning of the human tear film. J. Colloid Interface Sci. 184, 44–51. World Heath Organization, 2009. WHO model formulary 2008. WHO

Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Shin, Joong-Won; Cho, Won-Ju

2017-07-01

In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

PubMed

Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

2015-07-01

A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Phase coexistence and pinning of charge density waves by interfaces in chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singer, A.; Patel, S. K. K.; Uhlíř, V.

We study the temperature dependence of the charge density wave (CDW) in a chromium thin film using x-ray diffraction. We exploit the interference between the CDW satellite peaks and Laue oscillations to determine the amplitude, the phase, and the period of the CDW. We find discrete half-integer periods of CDW in the film and switching of the number of periods by one upon cooling/heating with a thermal hysteresis of 20 K. The transition between different CDWperiods occurs over a temperature range of 30 K, slightly larger than the width of the thermal hysteresis. A comparison with simulations shows that themore » phase transition occurs as a variation of the volume fraction of two distinct phases with well-defined periodicities. The phase of the CDW is constant for all temperatures, and we attribute it to strong pinning of the CDW by the mismatch-induced strain at the film-substrate interface.« less

Phonon impedance matching: minimizing interfacial thermal resistance of thin films

NASA Astrophysics Data System (ADS)

Polanco, Carlos; Zhang, Jingjie; Ghosh, Avik

2014-03-01

The challenge to minimize interfacial thermal resistance is to allow a broad band spectrum of phonons, with non-linear dispersion and well defined translational and rotational symmetries, to cross the interface. We explain how to minimize this resistance using a frequency dependent broadening matrix that generalizes the notion of acoustic impedance to the whole phonon spectrum including symmetries. We show how to ``match'' two given materials by joining them with a single atomic layer, with a multilayer material and with a graded superlattice. Atomic layer ``matching'' requires a layer with a mass close to the arithmetic mean (or spring constant close to the harmonic mean) to favor high frequency phonon transmission. For multilayer ``matching,'' we want a material with a broadening close to the geometric mean to maximize transmission peaks. For graded superlattices, a continuous sequence of geometric means translates to an exponentially varying broadening that generates a wide-band antireflection coating for both the coherent and incoherent limits. Our results are supported by ``first principles'' calculations of thermal conductance for GaAs / Gax Al1 - x As / AlAs thin films using the Non-Equilibrium Greens Function formalism coupled with Density Functional Perturbation Theory. NSF-CAREER (QMHP 1028883), NSF-IDR (CBET 1134311), XSEDE.

Comprehensive study of thin film evaporation from nanoporous membranes for enhanced thermal management

NASA Astrophysics Data System (ADS)

Wilke, Kyle; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, Tiejun; Wang, Evelyn

Performance of emerging electronics is often dictated by the ability to dissipate heat generated in the device. Thin film evaporation from nanopores promises enhanced thermal management by reducing the thermal transport resistance across the liquid film while providing capillary pumping. We present a study of the dependence of evaporation from nanopores on a variety of geometric parameters. Anodic aluminum oxide membranes were used as an experimental template. A biphilic treatment was also used to create a hydrophobic section of the pore to control meniscus location. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by confining fluid within the nanopore. Pore diameter had little effect on evaporation performance at pore radii of this length scale due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled linearly with porosity as the evaporative area increased. Furthermore, it was demonstrated that moving the meniscus as little as 1 μm into the pore could decrease performance significantly. The results provide a better understanding of evaporation from nanopores and provide guidance in future device design.

Atomistic modeling of metallic thin films by modified embedded atom method

NASA Astrophysics Data System (ADS)

Hao, Huali; Lau, Denvid

2017-11-01

Molecular dynamics simulation is applied to investigate the deposition process of metallic thin films. Eight metals, titanium, vanadium, iron, cobalt, nickel, copper, tungsten, and gold, are chosen to be deposited on the aluminum substrate. The second nearest-neighbor modified embedded atom method potential is adopted to predict their thermal and mechanical properties. When quantifying the screening parameters of the potential, the error for Young's modulus and coefficient of thermal expansion between the simulated results and the experimental measurements is less than 15%, demonstrating the reliability of the potential to predict metallic behaviors related to thermal and mechanical properties. A set of potential parameters which governs the interactions between aluminum and other metals in a binary system is also generated from ab initio calculation. The details of interfacial structures between the chosen films and substrate are successfully simulated with the help of these parameters. Our results indicate that the preferred orientation of film growth depends on the film crystal structure, and the inter-diffusion at the interface is correlated the cohesive energy parameter of potential for the binary system. Such finding provides an important basis to further understand the interfacial science, which contributes to the improvement of the mechanical properties, reliability and durability of films.

Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.

2015-02-28

Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of differentmore » thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.« less

Development of a Thermal Wave Interferometry System for Thin-Film Characterisation

DTIC Science & Technology

2012-10-01

describes a condition where the properties of the interface influence the phase and amplitude of the temperature oscillations at the surface. In the...The measured phase profiles are shown in Figure 13. Overall, the phase variation across the sample is significant, with a strong discontinuity in phase ...d eg ) 91.2 Hz 30 Hz 7 Hz 4 Hz Figure 13: Phase measurements across the coated sample. L1 L2 L3 L4 L5 A more rigorous validation of the

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Spin-dependent heat transport and thermal boundary resistance

NASA Astrophysics Data System (ADS)

Jeong, Taehee

In this thesis, thermal conductivity change depending on the magnetic configurations has been studied. In order to make different magnetic configurations, we developed a spin valve structure, which has high MR ratio and low saturation field. The high MR ratio was achieved using Co/Cu multilayer and 21A or 34A thick Cu layer. The low saturation field was obtained by implementing different coercivities of the successive ferromagnetic layers. For this purpose, Co/Cu/Cu tri-layered structure was used with the thicknesses of the Co layers; 15 A and 30 A. For the thermal conductivity measurement, a three-omega method was employed with a thermally isolated microscale rod. We fabricated the microscale rod using optical lithography and MEMS process. Then the rod was wire-bonded to a chip-carver for further electrical measurement. For the thermal conductivity measurement, we built the three-omega measurement system using two lock-in amplifiers and two differential amplifiers. A custom-made electromagnet was added to the system to investigate the impact of magnetic field. We observed titanic thermal conductivity change depending on the magnetic configurations of the Co/Cu/Co multilayer. The thermal conductivity change was closely correlated with that of the electric conductivity in terms of the spin orientation, but the thermal conductivity was much more sensitive than that of the electric conductivity. The relative thermal conductivity change was 50% meanwhile that of electric resistivity change was 8.0%. The difference between the two ratios suggests that the scattering mechanism for charge and heat transport in the Co/Cu/Co multilayer is different. The Lorentz number in Weidemann-Franz law is also spin-dependent. Thermal boundary resistance between metal and dielectrics was also studied in this thesis. The thermal boundary resistance becomes critical for heat transport in a nanoscale because the thermal boundary resistance can potentially determine overall heat transport in thin film structures. A transient theraroreflectance (TTR) technique can be used for measuring the thermal conductivity of thin films in cross-sectional direction. In this study, a pump-probe scheme was employed for the TTR technique. We built an optical pump-probe system by using a nanosecond pulse laser for pumping and a continuous-wave laser for probing. A short-time heating event occured at the surface of a sample by shining a laser pulse on the surface. Then the time-resolved thermoreflectance signals were detected using a photodetector and an oscilloscope. The increased temperature decreases slowly and its thermal decay depends on the thermal properties of a sample. Since the reflectivity is linearly proportional to the temperature, the time-resolved thermoreflectance signals have the information of the thermal properties of a sample. In order to extract the thermal properties of a sample, a thermal analysis was performed by fitting the experimental data with thermal models. We developed 2-layered and 3-layered thermal models using the analogies between thermal conduction and electric conduction and a transmission-line concept. We used two sets of sample structures: Au/SiNx/Si substrate and Au/CoFe/SiNx/Si substrate with various thickness of SiN x layer. Using the pump-probe system, we measured the time-resolved thermoreflectance signals for each sample. Then, the thermal conductivity and thermal boundary resistance were obtained by fitting the experimental data with the thermal models. The thermal conductivity of SiNx films was measured to be 2.0 W/mK for both structures. In the case of the thermal boundary resistance, it was 0.81x10-5 m 2K/W at the Au/SiNx interface and 0.54x10 -5 m2K/W at the CoFe/SiNx interface, respectively. The difference of the thermal boundary resistance between Au/SiNx and CoFe/SiNx might be came from the different phonon dispersion of Au and CoFe. The thermal conductivity did not depend on the thickness of SiNx films in the thickness range of 50-200nm. However, the thermal boundary resistance at metal/SiNx interfaces will impact overall thermal conduction when the thickness of SiNx thin films is in a nanometer order. For example, apparent thermal conductivity of SiN x film becomes half of the intrinsic thermal conductivity when the thickness decreases to 16nm. Therefore, it is advised that the thermal boundary resistance between metal and dielectrics should be counted in nano-scale electronic devices. (Abstract shortened by UMI.)

Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Inhye; Park, Jingyu; Jeon, Heeyoung

In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited themore » formation of NiSi{sub 2} phases at an annealing temperature of 800 °C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi{sub 2} was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi{sub 2} nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases.« less

A sputtered zirconia primer for improved thermal shock resistance of plasma sprayed ceramic turbine seals

NASA Technical Reports Server (NTRS)

Bill, R. C.; Sovey, J.; Allen, G. P.

1981-01-01

The development of plasma-sprayed yttria stabilized zirconia (YSZ) ceramic turbine blade tip seal components is discussed. The YSZ layers are quite thick (0.040 to 0.090 in.). The service potential of seal components with such thick ceramic layers is cyclic thermal shock limited. The most usual failure mode is ceramic layer delamination at or very near the interface between the plasma sprayed YSZ layer and the NiCrAlY bondcoat. Deposition of a thin RF sputtered YSZ primer to the bondcoat prior to deposition of the thick plasma sprayed YSZ layer was found to reduce laminar cracking in cyclic thermal shock testing. The cyclic thermal shock life of one ceramic seal design was increased by a factor of 5 to 6 when the sputtered YSZ primer was incorporated. A model based on thermal response of plasma sprayed YSZ particles impinging on the bondcoat surface with and without the sputtered YSZ primer provides a basis for understanding the function of the primer.

Ultrahigh Flux Thin Film Boiling Heat Transfer Through Nanoporous Membranes.

PubMed

Wang, Qingyang; Chen, Renkun

2018-05-09

Phase change heat transfer is fundamentally important for thermal energy conversion and management, such as in electronics with power density over 1 kW/cm 2 . The critical heat flux (CHF) of phase change heat transfer, either evaporation or boiling, is limited by vapor flux from the liquid-vapor interface, known as the upper limit of heat flux. This limit could in theory be greater than 1 kW/cm 2 on a planar surface, but its experimental realization has remained elusive. Here, we utilized nanoporous membranes to realize a new "thin film boiling" regime that resulted in an unprecedentedly high CHF of over 1.2 kW/cm 2 on a planar surface, which is within a factor of 4 of the theoretical limit, and can be increased to a higher value if mechanical strength of the membranes can be improved (demonstrated with 1.85 kW/cm 2 CHF in this work). The liquid supply is achieved through a simple nanoporous membrane that supports the liquid film where its thickness automatically decreases as heat flux increases. The thin film configuration reduces the conductive thermal resistance, leads to high frequency bubble departure, and provides separate liquid-vapor pathways, therefore significantly enhances the heat transfer. Our work provides a new nanostructuring approach to achieve ultrahigh heat flux in phase change heat transfer and will benefit both theoretical understanding and application in thermal management of high power devices of boiling heat transfer.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

PubMed Central

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-01

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

PubMed

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Topographic measurement of buried thin-film interfaces using a grazing resonant soft x-ray scattering technique

NASA Astrophysics Data System (ADS)

Gann, Eliot; Watson, Anne; Tumbleston, John R.; Cochran, Justin; Yan, Hongping; Wang, Cheng; Seok, Jaewook; Chabinyc, Michael; Ade, Harald

2014-12-01

The internal structures of thin films, particularly interfaces between different materials, are critical to system properties and performance across many disciplines, but characterization of buried interface topography is often unfeasible. In this work, we demonstrate that grazing resonant soft x-ray scattering (GRSoXS), a technique measuring diffusely scattered soft x rays from grazing incidence, can reveal the statistical topography of buried thin-film interfaces. By controlling and predicting the x-ray electric field intensity throughout the depth of the film and simultaneously the scattering contrast between materials, we are able to unambiguously identify the microstructure at different interfaces of a model polymer bilayer system. We additionally demonstrate the use of GRSoXS to selectively measure the topography of the surface and buried polymer-polymer interface in an organic thin-film transistor, revealing different microstructure and markedly differing evolution upon annealing. In such systems, where only indirect control of interface topography is possible, accurate measurement of the structure of interfaces for feedback is critically important. While we demonstrate the method here using organic materials, we also show that the technique is readily extendable to any thin-film system with elemental or chemical contrasts exploitable at absorption edges.

In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.

PubMed

Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus

2014-02-01

Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.

Interfacial phonon scattering and transmission loss in >1 μm thick silicon-on-insulator thin films

NASA Astrophysics Data System (ADS)

Jiang, Puqing; Lindsay, Lucas; Huang, Xi; Koh, Yee Kan

2018-05-01

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. To better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1-10 μm and a temperature range of 100-300 K. The Si /SiO2 interface roughness was determined to be 0.11 ±0.04 nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. We derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

A two-layer structured PbI2 thin film for efficient planar perovskite solar cells.

PubMed

Ying, Chao; Shi, Chengwu; Wu, Ni; Zhang, Jincheng; Wang, Mao

2015-07-28

In this paper, a two-layer structured PbI2 thin film was constructed by the spin-coating procedure using a 0.80 M PbI2 solution in DMF and subsequent close-spaced vacuum thermal evaporation using PbI2 powder as a source. The bottom PbI2 thin film was compact with a sheet-like appearance, parallel to the FTO substrate, and can be easily converted to a compact perovskite thin film to suppress the charge recombination of the electrons of the TiO2 conduction band and the holes of the spiro-OMeTAD valence band. The top PbI2 thin film was porous with nano-sheet arrays, perpendicular to the FTO substrate, and can be easily converted to a porous perovskite thin film to improve the hole migration from the perovskite to spiro-OMeTAD and the charge separation at the perovskite/spiro-OMeTAD interface. The planar perovskite solar cells based on the two-layer structured PbI2 thin film exhibited a photoelectric conversion efficiency of 11.64%, along with an open-circuit voltage of 0.90 V, a short-circuit photocurrent density of 19.29 mA cm(-2) and a fill factor of 0.67.

Desertification of the peritoneum by thin-film evaporation during laparoscopy.

PubMed

Ott, Douglas E

2003-01-01

To assess the effects of gas flow during insufflation on peritoneal fluid and peritoneal tissue regarding transient thermal behavior and thin-film evaporation. The effects of laparoscopic gas on peritoneal cell desiccation and peritoneal fluid thin-film evaporation were analyzed. Measurment of tissue and peritoneal fluid and analysis of gas flow dynamics during laparoscopy. High-velocity gas interface conditions during laparoscopic gas insufflation result in peritoneal surface temperature and decreases up to 20 degrees C/second due to rapid thin-film evaporation of the peritoneal fluid. Evaporation of the thin film of peritoneal fluid extends quickly to the peritoneal cell membrane, causing peritoneal cell desiccation, internal cytoplasmic stress, and disruption of the cell membrane, resulting in loss of peritoneal surface continuity and integrity. Changing the gas conditions to 35 degrees C and 95% humidity maintains normal peritoneal fluid thin-film characteristics, cellular integrity, and prevents evaporative losses. Cold, dry gas and the characteristics of the laparoscopic gas delivery apparatus cause local peritoneal damaging alterations by high-velocity gas flow with extremely dry gas, creating extreme arid surface conditions, rapid evaporative and hydrological changes, tissue desiccation, and peritoneal fluid alterations that contribute to the process of desertification and thin-film evaporation. Peritoneal desertification is preventable by preconditioning the gas to 35 degrees C and 95% humidity.

Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-χ Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing.

PubMed

Nakatani, Ryuichi; Takano, Hiroki; Chandra, Alvin; Yoshimura, Yasunari; Wang, Lei; Suzuki, Yoshinori; Tanaka, Yuki; Maeda, Rina; Kihara, Naoko; Minegishi, Shinya; Miyagi, Ken; Kasahara, Yuusuke; Sato, Hironobu; Seino, Yuriko; Azuma, Tsukasa; Yokoyama, Hideaki; Ober, Christopher K; Hayakawa, Teruaki

2017-09-20

In this study, a series of perpendicular lamellae-forming poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate)s (PMAPOSS-b-PTFEMAs) was developed based on the bottom-up concept of creating a simple yet effective material by tailoring the chemical properties and molecular composition of the material. The use of silicon (Si)-containing hybrid high-χ block copolymers (BCPs) provides easy access to sub-10 nm feature sizes. However, as the surface free energies (SFEs) of Si-containing polymers are typically vastly lower than organic polymers, this tends to result in the selective segregation of the inorganic block onto the air interface and increased difficulty in controlling the BCP orientation in thin films. Therefore, by balancing the SFEs between the organic and inorganic blocks through the use of poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA) on the organic block, a polymer with an SFE similar to Si-containing polymers, orientation control of the BCP domains in thin films becomes much simpler. Herein, perpendicularly oriented BCP thin films with a χ eff value of 0.45 were fabricated using simple spin-coating and thermal annealing processes under ambient conditions. The thin films displayed a minimum domain size of L 0 = 11 nm, as observed via atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Furthermore, directed self-assembly (DSA) of the BCP on a topographically prepatterned substrate using the grapho-epitaxy method was used to successfully obtain perpendicularly oriented lamellae with a half pitch size of ca. 8 nm.

Low intrinsic c-axis thermal conductivity in PVD grown epitaxial Sb2Te3 films

NASA Astrophysics Data System (ADS)

Rieger, F.; Kaiser, K.; Bendt, G.; Roddatis, V.; Thiessen, P.; Schulz, S.; Jooss, C.

2018-05-01

Accurate determination and comprehensive understanding of the intrinsic c-axis thermal conductivity κc of thermoelectric layered Sb2Te3 is of high importance for the development of strategies to optimize the figure of merit in thin film devices via heterostructures and defect engineering. We present here high precision measurements of κc of epitaxial Sb2Te3 thin films on Al2O3 substrates grown by physical vapor deposition in the temperature range of 100 K to 300 K. The Kapitza resistances of the involved interfaces have been determined and subtracted from the film data, allowing access to the intrinsic thermal conductivity of single crystalline Sb2Te3. At room temperature, we obtain κc = 1.9 W/m K, being much smaller than the in-plane thermal conductivity of κa b = 5 W/m K and even lower than the thermal conductivity of nano crystalline films of κnc ≈ 2.0-2.6 W/m K published by Park et al. [Nanoscale Res. Lett. 9, 96 (2014)]. High crystallinity and very low defect concentration of the films were confirmed by x-ray diffraction and high resolution transmission electron microscopy. Our data reveal that the phonon mean free path lm f p(" separators="|T ) is not limited by defect scattering and is of intrinsic nature, i.e., due to phonon-phonon scattering similar to other soft van der Waals type bonded layered systems.

Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

NASA Astrophysics Data System (ADS)

Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

2018-01-01

The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

Advanced Soldier Thermoelectric Power System for Power Generation from Battlefield Heat Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, Terry J.; Hogan, Tim; Case, Eldon D.

2010-09-01

The U.S. military uses large amounts of fuel during deployments and battlefield operations. This project sought to develop a lightweight, small form-factor, soldier-portable advanced thermoelectric (TE) system prototype to recover and convert waste heat from various deployed military equipment (i.e., diesel generators/engines, incinerators, vehicles, and potentially mobile kitchens), with the ultimate purpose of producing power for soldier battery charging, advanced capacitor charging, and other battlefield power applications. The technical approach employed microchannel technology, a unique “power panel” approach to heat exchange/TE system integration, and newly-characterized LAST (lead-antimony-silver-telluride) and LASTT (lead-antimony-silver-tin-telluride) TE materials segmented with bismuth telluride TE materials in designingmore » a segmented-element TE power module and system. This project researched never-before-addressed system integration challenges (thermal expansion, thermal diffusion, electrical interconnection, thermal and electrical interfaces) of designing thin “power panels” consisting of alternating layers of thin, microchannel heat exchangers (hot and cold) sandwiching thin, segmented-element TE power generators. The TE properties, structurally properties, and thermal fatigue behavior of LAST and LASTT materials were developed and characterized such that the first segmented-element TE modules using LAST / LASTT materials were fabricated and tested at hot-side temperatures = 400 °C and cold-side temperatures = 40 °C. LAST / LASTT materials were successfully segmented with bismuth telluride and electrically interconnected with diffusion barrier materials and copper strapping within the module electrical circuit. A TE system design was developed to produce 1.5-1.6 kW of electrical energy using these new TE modules from the exhaust waste heat of 60-kW Tactical Quiet Generators as demonstration vehicles.« less

Combined Atomic Force Microscope-Based Topographical Imaging and Nanometer Scale Resolved Proximal Probe Thermal Desorption/Electrospray Ionization-Mass Spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ovchinnikova, Olga S; Nikiforov, Maxim; Bradshaw, James A

2011-01-01

Nanometer scale proximal probe thermal desorption/electrospray ionization mass spectrometry (TD/ESI-MS) was demonstrated for molecular surface sampling of caffeine from a thin film using a 30 nm diameter nano-thermal analysis (nano-TA) probe tip in an atomic force microscope (AFM) coupled via a vapor transfer line and ESI interface to a MS detection platform. Using a probe temperature of 350 C and a spot sampling time of 30 s, conical desorption craters 250 nm in diameter and 100 nm deep were created as shown through subsequent topographical imaging of the surface within the same system. Automated sampling of a 5 x 2more » array of spots, with 2 m spacing between spots, and real time selective detection of the desorbed caffeine using tandem mass spectrometry was also demonstrated. Estimated from the crater volume (~2x106 nm3), only about 10 amol (2 fg) of caffeine was liberated from each thermal desorption crater in the thin film. These results illustrate a relatively simple experimental setup and means to acquire in automated fashion sub-micrometer scale spatial sampling resolution and mass spectral detection of materials amenable to TD. The ability to achieve MS-based chemical imaging with 250 nm scale spatial resolution with this system is anticipated.« less

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

NASA Astrophysics Data System (ADS)

Fong, S. W.; Sood, A.; Chen, L.; Kumari, N.; Asheghi, M.; Goodson, K. E.; Gibson, G. A.; Wong, H.-S. P.

2016-07-01

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100-500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m-3 for SiO2 and 10.2 → 8.27 × 1028 m-3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain.

PubMed

Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A

2018-03-27

Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

PubMed Central

Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A.

2018-01-01

Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods. PMID:29658917

Fundamentals and applications of solar energy. Part 2

NASA Astrophysics Data System (ADS)

Faraq, I. H.; Melsheimer, S. S.

Applications of techniques of chemical engineering to the development of materials, production methods, and performance optimization and evaluation of solar energy systems are discussed. Solar thermal storage systems using phase change materials, liquid phase Diels-Alder reactions, aquifers, and hydrocarbon oil were examined. Solar electric systems were explored in terms of a chlorophyll solar cell, the nonequilibrium electric field effects developed at photoelectrode/electrolyte interfaces, and designs for commercial scale processing of solar cells using continuous thin-film coating production methods. Solar coal gasification processes were considered, along with multilayer absorber coatings for solar concentrator receivers, solar thermal industrial applications, the kinetics of anaerobic digestion of crop residues to produce methane, and a procedure for developing a computer simulation of a solar cooling system.

Low thermal diffusivity measurements of thin films using mirage technique

NASA Astrophysics Data System (ADS)

Wong, P. K.; Fung, P. C. W.; Tam, H. L.

1998-12-01

Mirage technique is proved to be powerful in measurements of thermal diffusivity. Its contactless nature makes it suitable for delicate samples such as thin films and single crystals. However, as the damping of the thermal wave profile increases progressively upon the decrease in thermal diffusivity of the medium, mirage technique becomes more difficult to be applied to low thermal diffusivity measurements. Moreover influences from substrate signals make analysis difficult when the samples are thermally thin. Recently a thermal-wave-coupling method for mirage signal analysis [P. K. Wong, P. C. W. Fung, H. L. Tam, and J. Gao, Phys. Rev. B 51, 523 (1995)] was reported for thermal diffusivity measurements of thin film down to 60 nm thick. In this article we apply the thermal-wave-coupling method to thin films of low thermal diffusivity, especially polymer films. A new lower limit of thermal diffusivity measurable by mirage technique has been reached.

Lower-Conductivity Ceramic Materials for Thermal-Barrier Coatings

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Zhu, Dongming

2006-01-01

Doped pyrochlore oxides of a type described below are under consideration as alternative materials for high-temperature thermal-barrier coatings (TBCs). In comparison with partially-yttria-stabilized zirconia (YSZ), which is the state-of-the-art TBC material now in commercial use, these doped pyrochlore oxides exhibit lower thermal conductivities, which could be exploited to obtain the following advantages: For a given difference in temperature between an outer coating surface and the coating/substrate interface, the coating could be thinner. Reductions in coating thicknesses could translate to reductions in weight of hot-section components of turbine engines (e.g., combustor liners, blades, and vanes) to which TBCs are typically applied. For a given coating thickness, the difference in temperature between the outer coating surface and the coating/substrate interface could be greater. For turbine engines, this could translate to higher operating temperatures, with consequent increases in efficiency and reductions in polluting emissions. TBCs are needed because the temperatures in some turbine-engine hot sections exceed the maximum temperatures that the substrate materials (superalloys, Si-based ceramics, and others) can withstand. YSZ TBCs are applied to engine components as thin layers by plasma spraying or electron-beam physical vapor deposition. During operation at higher temperatures, YSZ layers undergo sintering, which increases their thermal conductivities and thereby renders them less effective as TBCs. Moreover, the sintered YSZ TBCs are less tolerant of stress and strain and, hence, are less durable.

Structural characteristics of phosphorus-doped C60 thin film prepared by radio frequency-plasma assisted thermal evaporation technique.

PubMed

Arie, Arenst Andreas; Lee, Joong Kee

2012-02-01

Phosphorus doped C60 (P:C60) thin films were prepared by a radio frequency plasma assisted thermal evaporation technique using C60 powder as a carbon source and a mixture of argon and phosphine (PH3) gas as a dopant precursor. The effects of the plasma power on the structural characteristics of the as-prepared films were then studied using Raman spectroscopy, Auger electron spectroscopy (AES) and X-ray photo-electrons spectroscopy (XPS). XPS and Auger analysis indicated that the films were mainly composed of C and P and that the concentration of P was proportional to the plasma power. The Raman results implied that the doped films contained a more disordered carbon structure than the un-doped samples. The P:C60 films were then used as a coating layer for the Si anodes of lithium ion secondary batteries. The cyclic voltammetry (CV) analysis of the P:C60 coated Si electrodes demonstrated that the P:C60 coating layer might be used to improve the transport of Li-ions at the electrode/electrolyte interface.

Composite Yb:YAG/SiC-prism thin disk laser.

PubMed

Newburgh, G A; Michael, A; Dubinskii, M

2010-08-02

We report the first demonstration of a Yb:YAG thin disk laser wherein the gain medium is intracavity face-cooled through bonding to an optical quality SiC prism. Due to the particular design of the composite bonded Yb:YAG/SiC-prism gain element, the laser beam impinges on all refractive index interfaces inside the laser cavity at Brewster's angles. The laser beam undergoes total internal reflection (TIR) at the bottom of the Yb(10%):YAG thin disk layer in a V-bounce cavity configuration. Through the use of TIR and Brewster's angles, no optical coatings, either anti-reflective (AR) or highly reflective (HR), are required inside the laser cavity. In this first demonstration, the 936.5-nm diode pumped laser performed with approximately 38% slope efficiency at 12 W of quasi-CW (Q-CW) output power at 1030 nm with a beam quality measured at M(2) = 1.5. This demonstration opens up a viable path toward novel thin disk laser designs with efficient double-sided room-temperature heatsinking via materials with the thermal conductivity of copper on both sides of the disk.

Subcritical crack growth along polymer interfaces

NASA Astrophysics Data System (ADS)

Gurumurthy, Charavana Kumara

2000-10-01

The adhesion characteristics have been investigated for a polyimide (PI)/model epoxy (ME) interface that is important for microelectronic applications. The fracture toughness (G*c) of this interface has been measured using an asymmetric double cantilever beam (ADCB) technique. The G*c is low, 10-25 J/m 2, and is sensitive to the mechanical phase angle psi. A modified ADCB setup has been used to measure the subcritical crack growth velocity v due to the stress-assisted water attack (SAWA) at various relative humidities (RH) and temperatures (T) as a function of its driving force (the strain energy release rate) G*. The threshold G* decreases remarkably. Above the threshold log v rises linearly with √ G* (a hydrolysis controlled regime) but then enters a regime where the crack velocity is almost independent of √G*, i.e., v = v* (a transport controlled regime). A model for SAWA has been developed based on thermally-activated kinetics for hydrolysis of the ester covalent bonds that bridge from one side to the other of the interface. A new technique has been developed for the determination of the fatigue crack growth under thermal (T) and hydro-thermal (HT) conditions as a function of the range in the strain energy release rate (DeltaG). Under T-fatigue, the fatigue crack growth per unit temperature cycle (da/dN) increases as a power of DeltaG, i.e., a Paris law relationship holds. The HT da/dN measured is higher than da/dN under T-fatigue conditions and has been successfully modeled as a summation of two components: (a) the da/dN due to T-fatigue and (b) the da/dN due to the SAWA along the interface for a given T-cycle. A surface modification procedure that converts a thin interpenetrated by a solvent cast ME is used to strengthen ME/PI interface. The G* c increases with the interpenetration distance w. Increasing w also improves the resistance of the PI/ME interface to SAWA with the threshold G* increasing and the water transport controlled velocity (v*) decreasing.

Assessing Reliability of Cold Spray Sputter Targets in Photovoltaic Manufacturing

NASA Astrophysics Data System (ADS)

Hardikar, Kedar; Vlcek, Johannes; Bheemreddy, Venkata; Juliano, Daniel

2017-10-01

Cold spray has been used to manufacture more than 800 Cu-In-Ga (CIG) sputter targets for deposition of high-efficiency photovoltaic thin films. It is a preferred technique since it enables high deposit purity and transfer of non-equilibrium alloy states to the target material. In this work, an integrated approach to reliability assessment of such targets with deposit weight in excess of 50 lb. is undertaken, involving thermal-mechanical characterization of the material in as-deposited condition, characterization of the interface adhesion on cylindrical substrate in as-deposited condition, and developing means to assess target integrity under thermal-mechanical loads during the physical vapor deposition (PVD) sputtering process. Mechanical characterization of cold spray deposited CIG alloy is accomplished through the use of indentation testing and adaptation of Brazilian disk test. A custom lever test was developed to characterize adhesion along the cylindrical interface between the CIG deposit and cylindrical substrate, overcoming limitations of current standards. A cohesive zone model for crack initiation and propagation at the deposit interface is developed and validated using the lever test and later used to simulate the potential catastrophic target failure in the PVD process. It is shown that this approach enables reliability assessment of sputter targets and improves robustness.

Coherent X-ray Scattering from Liquid-Air Interfaces

NASA Astrophysics Data System (ADS)

Shpyrko, Oleg

Advances in synchrotron x-ray scattering techniques allow studies of structure and dynamics of liquid surfaces with unprecedented resolution. I will review x-ray scattering measurements of thermally excited capillary fluctuations in liquids, thin polymer liquid films and polymer surfaces in confined geometry. X-ray Diffuse scattering profile due to Debye-Waller like roughening of the surface allows to probe the distribution of capillary fluctuations over a wide range of length scales, while using X-ray Photon Correlation Spectroscopy (XPCS) one is able to directly couple to nanoscale dynamics of these surface fluctuations, over a wide range of temporal and spacial scales. I will also discuss recent XPCS measurements of lateral diffusion dynamics in Langmuir monolayers assembled at the liquid-air interface. This research was supported by NSF CAREER Grant 0956131.

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

PubMed

Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2013-11-06

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Petascale Simulations of the Morphology and the Molecular Interface of Bulk Heterojunctions

DOE PAGES

Carrillo, Jan-Michael Y.; Seibers, Zach; Kumar, Rajeev; ...

2016-07-14

Understanding how additives interact and segregate within bulk heterojunction (BHJ) thin films is critical for exercising control over structure at multiple length scales and delivering improvements in photovoltaic performance. The morphological evolution of poly(3-hexylthiophene) (P3HT) and phenyl-C 61-butyric acid methyl ester (PCBM) blends that are commensurate with the size of a BHJ thin film is examined using petascale coarse-grained molecular dynamics simulations. When comparing 2 component and 3 component systems containing short P3HT chains as additives undergoing thermal annealing we demonstrate that the short chains alter the morphol- ogy in apparently useful ways: They efficiently migrate to the P3HT/PCBM interface,more » increasing the P3HT domain size and interfacial area. Simulation results agree with depth profiles determined from neutron reflectometry measurements that reveal PCBM enrichment near substrate and air interfaces, but a decrease in that PCBM enrich- ment when a small amount of short P3HT chains are integrated into the BHJ blend. Atomistic simulations of the P3HT/PCBM blend interfaces show a non-monotonic dependence of the interfacial thickness as a function of number of repeat units in the oligomeric P3HT additive, and the thiophene rings orient parallel to the interfacial plane as they approach the PCBM domain. Using the nanoscale geometries of the P3HT oligomers, LUMO and HOMO energy levels calculated by density functional theory are found to be invariant across the donor/acceptor interface. Finally, these connections between additives, processing, and morphology at all length scales are generally useful for efforts to improve device performance.« less

Edge Delamination of Monolayer Transition Metal Dichalcogenides.

PubMed

Ly, Thuc Hue; Yun, Seok Joon; Thi, Quoc Huy; Zhao, Jiong

2017-07-25

Delamination of thin films from the supportive substrates is a critical issue within the thin film industry. The emergent two-dimensional, atomic layered materials, including transition metal dichalcogenides, are highly flexible; thus buckles and wrinkles can be easily generated and play vital roles in the corresponding physical properties. Here we introduce one kind of patterned buckling behavior caused by the delamination from a substrate initiated at the edges of the chemical vapor deposition synthesized monolayer transition metal dichalcogenides, led by thermal expansion mismatch. The atomic force microscopy and optical characterizations clearly showed the puckered structures associated with the strain, whereas the transmission electron microscopy revealed the special sawtooth-shaped edges, which break the geometrical symmetry for the buckling behavior of hexagonal samples. The condition of the edge delamination is in accordance with the fracture behavior of thin film interfaces. This edge delamination and buckling process is universal for most ultrathin two-dimensional materials, which requires more attention in various future applications.

Functionalized copper(II)-phthalocyanine in solution and as thin film: photochemical and morphological characterization toward applications.

PubMed

Ingrosso, Chiara; Curri, M Lucia; Fini, Paola; Giancane, Gabriele; Agostiano, Angela; Valli, Ludovico

2009-09-01

This article reports on an extensive investigation on a functionalized phthalocyanine, namely, copper(II) tetrakis-(isopropoxy-carbonyl)-phthalocyanine (TIPCuPc). The self-association of the molecules is extensively described in solution in different solvents (DMSO, DMF, CHCl(3), pyridine) by means of UV-vis steady state spectroscopy at the air/water interface by Brewster angle microscopy (BAM) and in thin films by using atomic force microscopy (AFM). We investigated the morphology of TIPCuPc as thin film by evaluating different factors: temperature, solvent, concentration, transferring procedure (spin-coating and Langmuir-Schafer technique), and nature of the substrate (mica and quartz). The behavior of the molecules under UV light irradiation and their thermal stability were studied as well. Such a detailed study can allow a suitable processing of this phthalocyanine derivative for future applications. Here the photoelectrochemical activity of the phthalocyanine was investigated when suitably combined as sensitizer with rodlike TiO(2) nanocrystals (NCs) in hybrid junctions integrated in a photoelectrochemical cell.

Gradient plasticity for thermo-mechanical processes in metals with length and time scales

NASA Astrophysics Data System (ADS)

Voyiadjis, George Z.; Faghihi, Danial

2013-03-01

A thermodynamically consistent framework is developed in order to characterize the mechanical and thermal behavior of metals in small volume and on the fast transient time. In this regard, an enhanced gradient plasticity theory is coupled with the application of a micromorphic approach to the temperature variable. A physically based yield function based on the concept of thermal activation energy and the dislocation interaction mechanisms including nonlinear hardening is taken into consideration in the derivation. The effect of the material microstructural interface between two materials is also incorporated in the formulation with both temperature and rate effects. In order to accurately address the strengthening and hardening mechanisms, the theory is developed based on the decomposition of the mechanical state variables into energetic and dissipative counterparts which endowed the constitutive equations to have both energetic and dissipative gradient length scales for the bulk material and the interface. Moreover, the microstructural interaction effect in the fast transient process is addressed by incorporating two time scales into the microscopic heat equation. The numerical example of thin film on elastic substrate or a single phase bicrystal under uniform tension is addressed here. The effects of individual counterparts of the framework on the thermal and mechanical responses are investigated. The model is also compared with experimental results.

Kinetic measurement and prediction of the hydrogen outgassing from the polycrystalline LiH/Li 2O/LiOH system

NASA Astrophysics Data System (ADS)

Dinh, L. N.; Grant, D. M.; Schildbach, M. A.; Smith, R. A.; Siekhaus, W. J.; Balazs, B.; Leckey, J. H.; Kirkpatrick, J. R.; McLean, W.

2005-12-01

Due to the exothermic reaction of lithium hydride (LiH) salt with water during transportation and handling, there is always a thin film of lithium hydroxide (LiOH) present on the LiH surface. In dry or vacuum storage, this thin LiOH film slowly decomposes. The technique of temperature-programmed reaction/decomposition (TPR) was employed in combination with the isoconversion method of thermal analysis to determine the outgassing kinetics of H 2O from pure LiOH and H 2 and H 2O from this thin LiOH film. H 2 production via the reaction of LiH with LiOH, forming a lithium oxide (Li 2O) interlayer, is thermodynamically favored, with the rate of further reaction limited by diffusion through the Li 2O and the stability of the decomposing LiOH. Lithium hydroxide at the LiOH/vacuum interface also decomposes easily to Li 2O, releasing H 2O which subsequently reacts with LiH in a closed system to form H 2. At the onset of dry decomposition, where H 2 is the predominant product, the activation energy for outgassing from a thin LiOH film is lower than that for bulk LiOH. However, as the reactions at the LiH/Li 2O/LiOH and at the LiOH/vacuum interfaces proceed, the overall activation energy barrier for the outgassing approaches that of bulk LiOH decomposition. The kinetics developed here predict a hydrogen evolution profile in good agreement with hydrogen release observed during long term isothermal storage.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

The critical particle size for enhancing thermal conductivity in metal nanoparticle-polymer composites

NASA Astrophysics Data System (ADS)

Lu, Zexi; Wang, Yan; Ruan, Xiulin

2018-02-01

Polymers used as thermal interface materials are often filled with high-thermal conductivity particles to enhance the thermal performance. Here, we have combined molecular dynamics and the two-temperature model in 1D to investigate the impact of the metal filler size on the overall thermal conductivity. A critical particle size has been identified above which thermal conductivity enhancement can be achieved, caused by the interplay between high particle thermal conductivity and the added electron-phonon and phonon-phonon thermal boundary resistance brought by the particle fillers. Calculations on the SAM/Au/SAM (self-assembly-monolayer) system show a critical thickness Lc of around 10.8 nm. Based on the results, we define an effective thermal conductivity and propose a new thermal circuit analysis approach for the sandwiched metal layer that can intuitively explain simulation and experimental data. The results show that when the metal layer thickness decreases to be much smaller than the electron-phonon cooling length (or as the "thin limit"), the effective thermal conductivity is just the phonon portion, and electrons do not participate in thermal transport. As the thickness increases to the "thick limit," the effective thermal conductivity recovers the metal bulk value. Several factors that could affect Lc are discussed, and it is discovered that the thermal conductivity, thermal boundary resistance, and the electron-phonon coupling factor are all important in controlling Lc.

Thermal analysis of continuous and patterned multilayer films in the presence of a nanoscale hot spot

NASA Astrophysics Data System (ADS)

Juang, Jia-Yang; Zheng, Jinglin

2016-10-01

Thermal responses of multilayer films play essential roles in state-of-the-art electronic systems, such as photo/micro-electronic devices, data storage systems, and silicon-on-insulator transistors. In this paper, we focus on the thermal aspects of multilayer films in the presence of a nanoscale hot spot induced by near field laser heating. The problem is set up in the scenario of heat assisted magnetic recording (HAMR), the next-generation technology to overcome the data storage density limit imposed by superparamagnetism. We characterized thermal responses of both continuous and patterned multilayer media films using transient thermal modeling. We observed that material configurations, in particular, the thermal barriers at the material layer interfaces crucially impact the temperature field hence play a key role in determining the hot spot geometry, transient response and power consumption. With a representative generic media model, we further explored the possibility of optimizing thermal performances by designing layers of heat sink and thermal barrier. The modeling approach demonstrates an effective way to characterize thermal behaviors of micro and nano-scale electronic devices with multilayer thin film structures. The insights into the thermal transport scheme will be critical for design and operations of such electronic devices.

Effect of dual laser beam on dissimilar welding-brazing of aluminum to galvanized steel

NASA Astrophysics Data System (ADS)

Mohammadpour, Masoud; Yazdian, Nima; Yang, Guang; Wang, Hui-Ping; Carlson, Blair; Kovacevic, Radovan

2018-01-01

In this investigation, the joining of two types of galvanized steel and Al6022 aluminum alloy in a coach peel configuration was carried out using a laser welding-brazing process in dual-beam mode. The feasibility of this method to obtain a sound and uniform brazed bead with high surface quality at a high welding speed was investigated by employing AlSi12 as a consumable material. The effects of alloying elements on the thickness of intermetallic compound (IMC) produced at the interface of steel and aluminum, surface roughness, edge straightness and the tensile strength of the resultant joint were studied. The comprehensive study was conducted on the microstructure of joints by means of a scanning electron microscopy and EDS. Results showed that a dual-beam laser shape and high scanning speed could control the thickness of IMC as thin as 3 μm and alter the failure location from the steel-brazed interface toward the Al-brazed interface. The numerical simulation of thermal regime was conducted by the Finite Element Method (FEM), and simulation results were validated through comparative experimental data. FEM thermal modeling evidenced that the peak temperatures at the Al-steel interface were around the critical temperature range of 700-900 °C that is required for the highest growth rate of IMC. However, the time duration that the molten pool was placed inside this temperature range was less than 1 s, and this duration was too short for diffusion-control based IMC growth.

Dynamic thermal field-induced gradient soft-shear for highly oriented block copolymer thin films.

PubMed

Singh, Gurpreet; Yager, Kevin G; Berry, Brian; Kim, Ho-Cheol; Karim, Alamgir

2012-11-27

As demand for smaller, more powerful, and energy-efficient devices continues, conventional patterning technologies are pushing up against fundamental limits. Block copolymers (BCPs) are considered prime candidates for a potential solution via directed self-assembly of nanostructures. We introduce here a facile directed self-assembly method to rapidly fabricate unidirectionally aligned BCP nanopatterns at large scale, on rigid or flexible template-free substrates via a thermally induced dynamic gradient soft-shear field. A localized differential thermal expansion at the interface between a BCP film and a confining polydimethylsiloxane (PDMS) layer due to a dynamic thermal field imposes the gradient soft-shear field. PDMS undergoes directional expansion (along the annealing direction) in the heating zone and contracts back in the cooling zone, thus setting up a single cycle of oscillatory shear (maximum lateral shear stress ∼12 × 10(4) Pa) in the system. We successfully apply this process to create unidirectional alignment of BCP thin films over a wide range of thicknesses (nm to μm) and processing speeds (μm/s to mm/s) using both a flat and patterned PDMS layer. Grazing incidence small-angle X-ray scattering measurements show absolutely no sign of isotropic population and reveal ≥99% aligned orientational order with an angular spread Δθ(fwhm) ≤ 5° (full width at half-maximum). This method may pave the way to practical industrial use of hierarchically patterned BCP nanostructures.

Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

DOE PAGES

Mauger, Scott A.; Glasser, Melodie P.; Tremolet de Villers, Bertrand J.; ...

2016-01-21

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-raymore » absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.« less

Thermoelectric properties of hole-doped SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Ferreiro-Vila, Elias; Sarantopoulos, Alexandros; Leboran, Victor; Bui, Cong-Tinh; Rivadulla, Francisco; Condense matter Chemistry Group Team

2014-03-01

Two dimensional conductors are expected to show an improved thermoelectric performance due the positive effect of quantum confinement on the thermoelectric power, and the decrease of thermal conductivity by interface boundary scattering. The recent report of a large increase of the thermoelectric power in quantum wells of Nb-doped SrTiO3 (STO) seems to be in agreement with this hypothesis. However, extrinsic effects like the existence of oxygen vacancies that propagate away from the interface cannot be ruled out, and the results are far from clear. Here we will show the thermoelectric properties (electrical conductivity, Seebeck coefficient, and Hall effect), of epitaxial thin-films of (La,Nb)-doped STO. The films have been deposited by PLD on different substrates (STO, LAO...) to study the effect of tensile/compressive stress on the thermoelectric properties of the system. The oxygen pressure during the deposition was carefully controlled to tune the amount of oxygen vacancies and to compare with the cation doping. We have performed a systematic study of the transport properties as a function of thickness and doping, which along with the effect of stress, allows to understand the effect of charge density and dimensionality in an oxide system with promising thermoelectric properties.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

NASA Astrophysics Data System (ADS)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Effect of thermal interface on heat flow in carbon nanofiber composites.

PubMed

Gardea, F; Naraghi, M; Lagoudas, D

2014-01-22

The thermal transport process in carbon nanofiber (CNF)/epoxy composites is addressed through combined micromechanics and finite element modeling, guided by experiments. The heat exchange between CNF constituents and matrix is studied by explicitly accounting for interface thermal resistance between the CNFs and the epoxy matrix. The effects of nanofiber orientation and discontinuity on heat flow and thermal conductivity of nanocomposites are investigated through simulation of the laser flash experiment technique and Fourier's model of heat conduction. Our results indicate that when continuous CNFs are misoriented with respect to the average temperature gradient, the presence of interfacial resistance does not affect the thermal conductivity of the nanocomposites, as most of the heat flow will be through CNFs; however, interface thermal resistance can significantly alter the patterns of heat flow within the nanocomposite. It was found that very high interface resistance leads to heat entrapment at the interface near to the heat source, which can promote interface thermal degradation. The magnitude of heat entrapment, quantified via the peak transient temperature rise at the interface, in the case of high thermal resistance interfaces becomes an order of magnitude more intense as compared to the case of low thermal resistance interfaces. Moreover, high interface thermal resistance in the case of discontinuous fibers leads to a nearly complete thermal isolation of the fibers from the matrix, which will marginalize the contribution of the CNF thermal conductivity to the heat transfer in the composite.

Thermal conductivity of a film of single walled carbon nanotubes measured with infrared thermal imager

NASA Astrophysics Data System (ADS)

Feng, Ya; Inoue, Taiki; Xiang, Rong; Chiashi, Shohei; Maruyama, Shigeo

Heat dissipation has restricted the modern miniaturization trend with the development of electronic devices. Theoretically proven to be with high axial thermal conductivity, single walled carbon nanotubes (SWNT) have long been expected to cool down the nanoscale world. Even though the tube-tube contact resistance limits the capability of heat transfer of the bulk film, the high intrinsic thermal conductivity of SWNT still glorify the application of films of SWNT network as a thermal interface material. In this work, we proposed a new method to straightly measure the thermal conductivity of SWNT film. We bridged two cantilevered Si thin plate with SWNT film, and kept a steady state heat flow in between. With the infrared camera to record the temperature distribution, the Si plates with known thermal conductivity can work as a reference to calculate the heat flux going through the SWNT film. Further, the thermal conductivity of the SWNT film can be obtained through Fourier's law after deducting the effect of thermal radiation. The sizes of the structure, the heating temperature, the vacuum degree and other crucial impact factors are carefully considered and analyzed. The author Y. F. was supported through the Advanced Integration Science Innovation Education and Research Consortium Program by the Ministry of Education, Culture, Sport, Science and Technology.

Degradation of Au-Ti contacts of SiGe HBTs during electromagnetic field stress

NASA Astrophysics Data System (ADS)

Alaeddine, A.; Genevois, C.; Kadi, M.; Cuvilly, F.; Daoud, K.

2011-02-01

This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si3N4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects.

Exchange anisotropy pinning of a standing spin-wave mode

NASA Astrophysics Data System (ADS)

Magaraggia, R.; Kennewell, K.; Kostylev, M.; Stamps, R. L.; Ali, M.; Greig, D.; Hickey, B. J.; Marrows, C. H.

2011-02-01

Standing spin waves in a thin film are used as sensitive probes of interface pinning induced by an antiferromagnet through exchange anisotropy. Using coplanar waveguide ferromagnetic resonance, pinning of the lowest energy spin-wave thickness mode in Ni80Fe20/Ir25Mn75 exchange-biased bilayers was studied for a range of Ir25Mn75 thicknesses. We show that pinning of the standing mode can be used to amplify, relative to the fundamental resonance, frequency shifts associated with exchange bias. The shifts provide a unique “fingerprint” of the exchange bias and can be interpreted in terms of an effective ferromagnetic film thickness and ferromagnet-antiferromagnet interface anisotropy. Thermal effects are studied for ultrathin antiferromagnetic Ir25Mn75 thicknesses, and the onset of bias is correlated with changes in the pinning fields. The pinning strength magnitude is found to grow with cooling of the sample, while the effective ferromagnetic film thickness simultaneously decreases. These results suggest that exchange bias involves some deformation of magnetic order in the interface region.

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiolo, L.; Pecora, A.; Fortunato, G.

2006-03-15

Silicon dioxide films have been deposited at temperatures below 270 deg. C in an electron cyclotron resonance (ECR) plasma reactor from O{sub 2}, SiH{sub 4}, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (<7 pinhole/mm{sup 2}), ensuring low-temperature process integration on large area. From Fourier transform infrared analysis and thermal desorption spectrometry we also evaluated very low hydrogen content if compared to conventional rf-plasma-enhanced chemical-vapor-deposited (PECVD) SiO{sub 2} deposited at 350 deg. C. Electrical propertiesmore » have been measured in metal-oxide-semiconductor (MOS) capacitors, depositing SiO{sub 2} at RT as gate dielectric; breakdown electric fields >10 MV/cm and charge trapping at fields >6 MV/cm have been evaluated. From the study of interface quality in MOS capacitors, we found that even for low annealing temperature (200 deg. C), it is possible to considerably reduce the interface state density down to 5x10{sup 11} cm{sup -2} eV{sup -1}. To fully validate the ECR-PECVD silicon dioxide we fabricated polycrystalline silicon thin-film transistors using RT-deposited SiO{sub 2} as gate insulator. Different postdeposition thermal treatments have been studied and good device characteristics were obtained even for annealing temperature as low as 200 deg. C.« less

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Theoretical modeling of cellular and dendritic solidification microstructures

NASA Astrophysics Data System (ADS)

Song, Younggil

In this dissertation, we use three-dimensional (3D) phase-field (PF) modeling to investigate (i) 3D solid-liquid interface dynamics observed in microgravity experiments, and (ii) array patterns in a thin-sample geometry. In addition, using the two-dimensional (2D) dendritic-needle-network (DNN) model, we explore (iii) secondary sidebranching dynamics. Recently, solidification experiments are carried out in the DSI (Directional Solidification Insert) of the DECLIC (Device for the study of Critical LIquids and Crystallization) facility aboard the International Space Station (ISS). Thus, the directional solidification experiments are achieved under limited convective currents, and the experimental observations reveal unique dynamics of 3D microstructure in a purely diffusive growth regime. In this directional solidification setup, a temperature field between heat sources could evolve due to two main factors: (i) heat transfer within an adiabatic zone and (ii) latent heat rejection at the interface. These two thermal effects are phenomenologically characterized using a time-dependent thermal shift. In addition, we could quantitatively account for these thermal factors using a numerical calculation of the evolution of temperature field. We introduce these phenomenological and quantitative thermal representations into the PF model. The performed simulations using different thermal descriptions are compared to the experimental measurements from the initial planar interface dynamics to the final spacing selection. The DECLIC-DSI experimental observations exhibit complex grain boundary (GB) dynamics between large grains with a small misorientation. In the observations, several large grains with a small misorientation with respect to the temperature gradient are formed during solidification. Specifically, at a convergent GB, a localized group of misoriented cells penetrates into a nearby grain, which yields the morphological instability of grain boundaries. Remarkably, while the invasion process starts with a group of cells, the leader cell can detach itself from the group and grow continuously as a misoriented solitary cell in the other grain with a different misorientation. We use PF simulations to investigate the GB morphology and dynamics of a solitary cell. Solidification experiments on earth are typically performed in a thin-sample geometry to avoid fluid convection. Thus, we consider various influences on cellular and dendritic array patterns in thin samples. First, we explore the influence of crystal orientation. When a grain in a thin-sample geometry is misoriented with respect to the temperature gradient, primary cells and dendrites drift laterally in both experiments and simulations. At the same time, grain boundaries are systematically formed at the edges of the misoriented grain. The misoriented primary branches move away from the divergent grain boundary. At this boundary, cells/dendrites are generated continuously, and their spacings are larger than the dynamically selected spacings. Primary branches run into the other convergent GB, which leads to their elimination. Thus, at a stationary state, a spacing distribution is uniform with the spacing selected at the divergent GB until it decreases near the convergent GB. We perform simulations to illustrate the global evolutions of a primary spacing. In addition, we suggest a simple geometrical model and a nonlinear advection equation for the dynamics of the primary spacing evolution, which can predict the slow evolution of a primary spacing in a quasi-2D array. Experimental observations point out that the primary spacing selection could be affected by the sample thickness; however, the detailed description for the link between the primary spacing selection and a sample thickness is still missing. Here, we use PF simulations to investigate the primary cellular and dendritic spacing selection mechanisms under the influence of a sample thickness. A thin-sample geometry can limit thermal and solutal convective currents effectively. However, as the sample thickness increases, the convective currents can influence the solid- liquid interface dynamics. Then, the microstructure selection mechanisms can be different from the classical theories that are valid in a diffusive regime. We propose a simple approach for the PF model to demonstrate the microstructure selection when liquid convection is present. These simulations are compared to experimental results. Columnar microstructures with cells and dendrites typically form polycrystalline materials during directional solidification. Then, convergent and divergent grain boundaries form systematically between grains, which are misoriented with respect to the temperature gradient. Moreover, the GB is dynamically selected during the competition between two nearby misoriented grains. In order to investigate the GB orientation selection, we carry out 3D PF simulations in a thin-sample geometry. These simulations reveal the influence of the 3D GB bi-crystallography on grain competition. The results highlight the importance of considering the orientation of the orthogonal planes containing secondary branches in addition to the growth direction of primary branches. Finally, we propose three growth steps to demonstrate the secondary sidebranching growth dynamics under isothermal dendritic growth condition. (Abstract shortened by ProQuest.).

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing.

PubMed

Liang, Yuan-Chang; Lung, Tsai-Wen; Wang, Chein-Chung

2016-12-01

Well-crystallized Sn 2 S 3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn 2 S 3 thin films exhibited a sheet-like feature. The Sn 2 S 3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn 2 S 3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn 2 S 3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn 2 S 3 thin films transformed into a SnO 2 phase, and well-layered Sn 2 S 3 -SnO 2 heterostructure thin films were thus formed. The Sn 2 S 3 -SnO 2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO 2 gases (0.2-2.5 ppm). By contrast, the pure Sn 2 S 3 thin film exhibited an unapparent room-temperature NO 2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn 2 S 3 -SnO 2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO 2 gas-sensing responses of the heterostructure thin film on exposure to NO 2 gas at low concentrations in this work.

Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

NASA Astrophysics Data System (ADS)

Fang, Fang

2011-12-01

Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a combination of core levels and valence band ultraviolet photoemission spectra of the bulk materials as well as the heterojunction (Sb2Te 3/Bi2Te3), the VBO at p-type Sb2Te 3 and n-type Bi2Te3 is determined as 0.04 +/- 0.10 eV. Such a small energy offset is within the same magnitude of the thermal energy of kT, at room temperature. The motivation for the II-VI ZnTe-based thin film solar cell derives from the need to identify and overcome performance-limiting properties related to the processing of film deposition using close space sublimation (CSS). Chemical and electronic properties of the CSS grown ZnTe/ZnSe films were studied in x-ray diffraction, scanning electron microscopy and photoemission spectroscopy. Specifically, Se oxide was observed on the ZnSe surface, the removal of this oxide generated apparent offsets in the valence band and hence the alignment at the heterojunction energy diagram. Processing steps to mitigate oxidation yielded the best cells. Film structure was studied on the dependence of growth time; physical film damage is found during the initial stages when depositing ZnTe on a grown ZnSe film. Preliminary studies of films grown by evaporation and their characterizations are presented at last. In this thesis, a better understanding of the electronic structure at interfaces is built in two different thin film devices, and the resulting band energy diagram of the corresponding devices offered effective feedback in materials and device.The problem of energy equilibrium in the human body has received a great deal.

Cooperative strings and glassy interfaces

PubMed Central

Salez, Thomas; Salez, Justin; Dalnoki-Veress, Kari; Raphaël, Elie; Forrest, James A.

2015-01-01

We introduce a minimal theory of glass formation based on the ideas of molecular crowding and resultant string-like cooperative rearrangement, and address the effects of free interfaces. In the bulk case, we obtain a scaling expression for the number of particles taking part in cooperative strings, and we recover the Adam–Gibbs description of glassy dynamics. Then, by including thermal dilatation, the Vogel–Fulcher–Tammann relation is derived. Moreover, the random and string-like characters of the cooperative rearrangement allow us to predict a temperature-dependent expression for the cooperative length ξ of bulk relaxation. Finally, we explore the influence of sample boundaries when the system size becomes comparable to ξ. The theory is in agreement with measurements of the glass-transition temperature of thin polymer films, and allows quantification of the temperature-dependent thickness hm of the interfacial mobile layer. PMID:26100908

Thermal phase separation of ZrSiO4 thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Yilmaz, E.

2018-05-01

In this work, the thermal phase separation and annealing optimization of ZrSiO4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance–voltage (C–V), conductance–voltage (G/ω) and leakage-current–voltage (Ig–Vg ). The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO4. This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71 × 1010 and the number of border traps decreased to 7.18 × 1010 cm‑2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10‑9 Acm‑2 to 10‑6 Acm‑2. The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO4/Si interface. The barrier height of the device varies slightly from 0.776 eV to 0.827 eV under frequency dispersion. Briefly, it is concluded that the devices annealed at 1000 °C exhibit promising electrical characteristics.

Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

PubMed

Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

2017-11-08

In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

Study of organic-inorganic hetero-interfaces and electrical transport in semiconducting nanostructures

NASA Astrophysics Data System (ADS)

Wagner, Sean Robert

As the electronics industry continues to evolve and move towards functional electronic devices with increasing complexity and functionality, it becomes important to explore materials outside the regime of conventional semiconductors. Organic semiconducting small molecules have received a large amount of attention due to their high degree of flexibility, the option to perform molecular synthesis to modify their electronic and magnetic properties, and their ability to organize into highly-ordered functionalized nanostructures and thin films. Being able to form complex nanostructures and thin films with molecular precision, while maintaining the ability to tune properties through modifications in the molecular chemistry could result in vast improvements in conventional device architectures. However, before this is realized, there still remains a significant lack of understanding regarding how these molecules interact with various substrate surfaces as well as their intermolecular interactions. The interplay between these interactions can produce drastic changes in the molecular orientation and ordering at the hetero-interface, which can affect the transport properties of the molecular thin film and ultimately modify the performance of the organic electronic device. This study first focuses on the growth dynamics, molecular ordering, and molecular orientation of metal phthalocyanine (MPc) molecules, particularly on Si, a substrate which is notoriously difficult to form an organized organic thin film on due to the surface dangling bonds. By deactivating these bonds, the formation of a highly ordered organic molecular thin film becomes possible. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, low-energy electron diffraction, and density functional theory calculations, the growth evolution of MPc molecules ( M = Zn, Cu, Co) from the single molecule level to multilayered films on the deactivated Si(111)-B surface is investigated. Initial tests are centered around thermally evaporated ZnPc. These molecules display a highly-ordered, close-packed, tilted configuration which differs from any known bulk packing motif. The ZnPc molecules are able to diffuse rapidly on the Si surface and preferentially nucleate at Si step-edges. This is followed by the formation of highly-ordered anisotropic stripe structures which grow across the Si terraces, i.e. anisotropic step-flow growth. The step-flow growth mode further impacts the growth by reducing the allowed symmetry of the molecular domains such that thin films with an exclusive in-plane molecular ordering are formed. Additionally, the ZnPc tilted packing motif stabilizes the molecular film, allowing it to maintain this packing for multilayered films, despite the decreasing substrate influence. The strength of the MPc-substrate interaction can be modified by changing the central transition-metal ion within the molecule. Through selective p-d orbital coupling between MPc molecules and the substrate, the degree of orbital coupling can induce modifications in the molecular ordering and orientation of MPc molecules at the interface. The secondary focus of this study is to initiate preliminary experimentation towards understanding how ordered organic molecular thin films can be applied to silicon-based devices that could have a significant impact on the electronics market. Si nanomembrane is a flexible, low-dimensional nanomaterial with electronic properties that are highly sensitive to the interface condition. By merging the knowledge of MPc thin film growth on Si with Si nanomembrane technology, possibilities towards modifying the transport properties of nanomaterials through engineering the organic-inorganic hetero-interface can be explored.

The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

NASA Astrophysics Data System (ADS)

Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

2004-03-01

A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Puqing; Lindsay, Lucas R.; Huang, Xi

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman'smore » theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.« less

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

DOE PAGES

Jiang, Puqing; Lindsay, Lucas R.; Huang, Xi; ...

2018-05-17

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman'smore » theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.« less

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Anisotropic thermal conductivity of thin polycrystalline oxide samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, A., E-mail: abhishektiwariiitr@gmail.com; Department of Mechanical and Aerospace Engineering, Monash University, Melbourne, VIC 3800; Boussois, K.

2013-11-15

This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for suchmore » anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.« less

Study of sputtered ZnO modified by Direct Laser Interference Patterning: Structural characterization and temperature simulation

NASA Astrophysics Data System (ADS)

Parellada-Monreal, L.; Castro-Hurtado, I.; Martínez-Calderón, M.; Rodriguez, A.; Olaizola, S. M.; Gamarra, D.; Lozano, J.; Mandayo, G. G.

2018-05-01

ZnO thin film sputtered on alumina substrate is processed by Direct Laser Interference Patterning (DLIP). The heat transfer equation has been simulated for interference patterns with a period of 730 nm and two different fluences (85 mJ/cm2 and 165 mJ/cm2). A thermal threshold of 900 K, where crystal modification occurs has been calculated, indicating a lateral and depth processing around 173 nm and 140 nm, respectively. The experimentally reproduced samples have been analyzed from the structural and composition point of view and compared to conventional thermal treatments at three different temperatures (600 °C, 700 °C and 800 °C). Promising properties have been observed for the laser treated samples, such as low influence on the thin film/substrate interface, an improvement of the crystallographic structure, as well as a decrease of the oxygen content from O/Zn = 2.10 to 1.38 for the highest fluence, getting closer to the stoichiometry. The DLIP characteristics could be suitable for the replacement of annealing process in the case of substrates that cannot achieve high temperatures as most of flexible substrates.

Explosive decomposition of hydrazine by rapid compression of a gas volume

NASA Technical Reports Server (NTRS)

Bunker, R. L.; Baker, D. L.; Lee, J. H. S.

1991-01-01

In the present investigation of the initiation mechanism and the explosion mode of hydrazine decomposition, a 20 cm-long column of liquid hydrazine was accelerated into a column of gaseous nitrogen, from which it was separated by a thin Teflon diaphragm, in a close-ended cylindrical chamber. Video data obtained reveal the formation of a froth generated by the acceleration of hydrazine into nitrogen at the liquid hydrazine-gaseous nitrogen interface. The explosive hydrazine decomposition had as its initiation mechanism the formation of a froth at a critical temperature; the explosion mode of hydrazine is a confined thermal runaway reaction.

Thermal conductivity of pure silica MEL and MFI zeolite thin films

NASA Astrophysics Data System (ADS)

Coquil, Thomas; Lew, Christopher M.; Yan, Yushan; Pilon, Laurent

2010-08-01

This paper reports the room temperature cross-plane thermal conductivity of pure silica zeolite (PSZ) MEL and MFI thin films. PSZ MEL thin films were prepared by spin coating a suspension of MEL nanoparticles in 1-butanol solution onto silicon substrates followed by calcination and vapor-phase silylation with trimethylchlorosilane. The mass fraction of nanoparticles within the suspension varied from 16% to 55%. This was achieved by varying the crystallization time of the suspension. The thin films consisted of crystalline MEL nanoparticles embedded in a nonuniform and highly porous silica matrix. They featured porosity, relative crystallinity, and MEL nanoparticles size ranging from 40% to 59%, 23% to 47% and 55 nm to 80 nm, respectively. PSZ MFI thin films were made by in situ crystallization, were b-oriented, fully crystalline, and had a 33% porosity. Thermal conductivity of these PSZ thin films was measured at room temperature using the 3ω method. The cross-plane thermal conductivity of the MEL thin films remained nearly unchanged around 1.02±0.10 W m-1 K-1 despite increases in (i) relative crystallinity, (ii) MEL nanoparticle size, and (iii) yield caused by longer nanoparticle crystallization time. Indeed, the effects of these parameters on the thermal conductivity were compensated by the simultaneous increase in porosity. PSZ MFI thin films were found to have similar thermal conductivity as MEL thin films even though they had smaller porosity. Finally, the average thermal conductivity of the PSZ films was three to five times larger than that reported for amorphous sol-gel mesoporous silica thin films with similar porosity and dielectric constant.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

Extending the 3ω method: thermal conductivity characterization of thin films.

PubMed

Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

2013-08-01

A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

Copper Multiwall Carbon Nanotubes and Copper-Diamond Composites for Advanced Rocket Engines

NASA Technical Reports Server (NTRS)

Bhat, Biliyar N.; Ellis, Dave L.; Smelyanskiy, Vadim; Foygel, Michael; Singh, Jogender; Rape, Aaron; Vohra, Yogesh; Thomas, Vinoy; Li, Deyu; Otte, Kyle

2013-01-01

This paper reports on the research effort to improve the thermal conductivity of the copper-based alloy NARloy-Z (Cu-3 wt.%Ag-0.5 wt.% Zr), the state-of-the-art alloy used to make combustion chamber liners in regeneratively-cooled liquid rocket engines, using nanotechnology. The approach was to embed high thermal conductivity multiwall carbon nanotubes (MWCNTs) and diamond (D) particles in the NARloy-Z matrix using powder metallurgy techniques. The thermal conductivity of MWCNTs and D have been reported to be 5 to 10 times that of NARloy-Z. Hence, 10 to 20 vol. % MWCNT finely dispersed in NARloy-Z matrix could nearly double the thermal conductivity, provided there is a good thermal bond between MWCNTs and copper matrix. Quantum mechanics-based modeling showed that zirconium (Zr) in NARloy-Z should form ZrC at the MWCNT-Cu interface and provide a good thermal bond. In this study, NARloy-Z powder was blended with MWCNTs in a ball mill, and the resulting mixture was consolidated under high pressure and temperature using Field Assisted Sintering Technology (FAST). Microstructural analysis showed that the MWCNTs, which were provided as tangles of MWCNTs by the manufacturer, did not detangle well during blending and formed clumps at the prior particle boundaries. The composites made form these powders showed lower thermal conductivity than the base NARloy-Z. To eliminate the observed physical agglomeration, tangled multiwall MWCNTs were separated by acid treatment and electroless plated with a thin layer of chromium to keep them separated during further processing. Separately, the thermal conductivities of MWCNTs used in this work were measured, and the results showed very low values, a major factor in the low thermal conductivity of the composite. On the other hand, D particles embedded in NARloy-Z matrix showed much improved thermal conductivity. Elemental analysis showed migration of Zr to the NARloy-Z-D interface to form ZrC, which appeared to provide a low contact thermal resistance. These results are consistent with the quantum mechanics-based model predictions. NARloy-Z-D composites have relatively high thermal conductivities and are promising for further development.

Copper-Multiwall Carbon Nanotubes and Copper-Diamond Composites for Advanced Rocket Engines

NASA Technical Reports Server (NTRS)

Bhat, Biliyar N.; Ellis, Dave L.; Smelyanskiy, Vadim; Foygel, Michael; Rape, Aaron; Singh, Jogender; Vohra, Yogesh K.; Thomas, Vinoy; Otte, Kyle G.; Li, Deyu

2013-01-01

This paper reports on the research effort to improve the thermal conductivity of the copper-based alloy NARloy-Z (Cu-3 wt.%Ag-0.5 wt.% Zr), the state-of-the-art alloy used to make combustion chamber liners in regeneratively-cooled liquid rocket engines, using nanotechnology. The approach was to embed high thermal conductivity multiwall carbon nanotubes (MWCNTs) and diamond (D) particles in the NARloy-Z matrix using powder metallurgy techniques. The thermal conductivity of MWCNTs and D have been reported to be 5 to 10 times that of NARloy-Z. Hence, 10 to 20 vol. % MWCNT finely dispersed in NARloy-Z matrix could nearly double the thermal conductivity, provided there is a good thermal bond between MWCNTs and copper matrix. Quantum mechanics-based modeling showed that zirconium (Zr) in NARloy-Z should form ZrC at the MWCNT-Cu interface and provide a good thermal bond. In this study, NARloy-Z powder was blended with MWCNTs in a ball mill, and the resulting mixture was consolidated under high pressure and temperature using Field Assisted Sintering Technology (FAST). Microstructural analysis showed that the MWCNTs, which were provided as tangles of MWCNTs by the manufacturer, did not detangle well during blending and formed clumps at the prior particle boundaries. The composites made form these powders showed lower thermal conductivity than the base NARloy-Z. To eliminate the observed physical agglomeration, tangled multiwall MWCNTs were separated by acid treatment and electroless plated with a thin layer of chromium to keep them separated during further processing. Separately, the thermal conductivities of MWCNTs used in this work were measured, and the results showed very low values, a major factor in the low thermal conductivity of the composite. On the other hand, D particles embedded in NARloy-Z matrix showed much improved thermal conductivity. Elemental analysis showed migration of Zr to the NARloy-Z-D interface to form ZrC, which appeared to provide a low contact thermal resistance. These results are consistent with the quantum mechanics-based model predictions. NARloy-Z-D composites have relatively high thermal conductivities and are promising for further development.

A coupled mechanical-chemical model for reflecting the influence of stress on oxidation reactions in thermal barrier coating

NASA Astrophysics Data System (ADS)

Chen, Lin; Yueming, Li

2018-06-01

In this paper, a coupled mechanical-chemical model is established based on the thermodynamic framework, in which the contribution of chemical expansion to free energy is introduced. The stress-dependent chemical potential equilibrium at the gas-solid interface and the stress gradient-dependent diffusion equation as well as a so-called generalized force which is conjugate to the oxidation rate are derived from the proposed model, which could reflect the influence of stresses on the oxidation reaction. Based on the proposed coupled mechanical-chemical model, a user element subroutine is developed in ABAQUS. The numerical simulation of the high temperature oxidation in the thermal barrier coating is carried out to verify the accuracy of the proposed model, and then the influence of stresses on the oxidation reaction is investigated. In thermally grown oxide, the considerable stresses would be induced by permanent volumetric swelling during the oxidation. The stresses play an important role in the chemical potential equilibrium at the gas-solid interface and strongly affect the oxidation reaction. The gradient of the stresses, however, only occurs in the extremely thin oxidation front layer, which plays a very limited role in the oxidation reaction. The generalized force could be divided into the stress-dependent and the stress-independent parts. Comparing with the stress-independent part, the stress-dependent part is smaller, which has little influence on oxidation reaction.

Direct imaging of thermally-activated grain-boundary diffusion in Cu/Co/IrMn/Pt exchange-bias structures using atom-probe tomography

NASA Astrophysics Data System (ADS)

Letellier, F.; Lechevallier, L.; Lardé, R.; Le Breton, J.-M.; Akmaldinov, K.; Auffret, S.; Dieny, B.; Baltz, V.

2014-11-01

Magnetic devices are often subject to thermal processing steps, such as field cooling to set exchange bias and annealing to crystallize amorphous magnetic electrodes. These processing steps may result in interdiffusion and the subsequent deterioration of magnetic properties. In this study, we investigated thermally-activated diffusion in Cu/Co/IrMn/Pt exchange biased polycrystalline thin-film structures using atom probe tomography. Images taken after annealing at 400 °C for 60 min revealed Mn diffusion into Co grains at the Co/IrMn interface and along Pt grain boundaries for the IrMn/Pt stack, i.e., a Harrison type C regime. Annealing at 500 °C showed further Mn diffusion into Co grains. At the IrMn/Pt interface, annealing at 500 °C led to a type B behavior since Mn diffusion was detected both along Pt grain boundaries and also into Pt grains. The deterioration of the films' exchange bias properties upon annealing was correlated to the observed diffusion. In particular, the topmost Pt capping layer thickness turned out to be crucial since a faster deterioration of the exchange bias properties for thicker caps was observed. This is consistent with the idea that Pt acts as a getter for Mn, drawing Mn out of the IrMn layer.

Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique

NASA Astrophysics Data System (ADS)

Blumenschein, N.; Slomski, M.; Paskov, P. P.; Kaess, F.; Breckenridge, M. H.; Muth, J. F.; Paskova, T.

2018-02-01

Thermal conductivity of undoped and Sn-doped β-Ga2O3 bulk and single-crystalline thin films have been measured by the 3ω technique. The bulk samples were grown by edge-defined film-field growth (EFG) method, while the thin films were grown on c-plane sapphire by pulsed-laser deposition (PLD). All samples were with (-201) surface orientation. Thermal conductivity of bulk samples was calculated along the in-plane and cross-plane crystallographic directions, yielding a maximum value of 29 W/m-K in the [010] direction at room temperature. A slight thermal conductivity decrease was observed in the Sn-doped bulk samples, which was attributed to enhanced phonon-impurity scattering. The differential 3ω method was used for β-Ga2O3 thin film samples due to the small film thickness. Results show that both undoped and Sndoped films have a much lower thermal conductivity than that of the bulk samples, which is consistent with previous reports in the literature showing a linear relationship between thermal conductivity and film thickness. Similarly to bulk samples, Sn-doped thin films have exhibited a thermal conductivity decrease. However, this decrease was found to be much greater in thin film samples, and increased with Sn doping concentration. A correlation between thermal conductivity and defect/dislocation density was made for the undoped thin films.

Deconstructing Temperature Gradients across Fluid Interfaces: The Structural Origin of the Thermal Resistance of Liquid-Vapor Interfaces

NASA Astrophysics Data System (ADS)

Muscatello, Jordan; Chacón, Enrique; Tarazona, Pedro; Bresme, Fernando

2017-07-01

The interfacial thermal resistance determines condensation-evaporation processes and thermal transport across material-fluid interfaces. Despite its importance in transport processes, the interfacial structure responsible for the thermal resistance is still unknown. By combining nonequilibrium molecular dynamics simulations and interfacial analyses that remove the interfacial thermal fluctuations we show that the thermal resistance of liquid-vapor interfaces is connected to a low density fluid layer that is adsorbed at the liquid surface. This thermal resistance layer (TRL) defines the boundary where the thermal transport mechanism changes from that of gases (ballistic) to that characteristic of dense liquids, dominated by frequent particle collisions involving very short mean free paths. We show that the thermal conductance is proportional to the number of atoms adsorbed in the TRL, and hence we explain the structural origin of the thermal resistance in liquid-vapor interfaces.

Gas Control and Thermal Modeling Methods for Pressed Pellet and Fast Rise Thin-Film Thermal Batteries

DTIC Science & Technology

2015-09-01

Thin-Film Thermal Batteries by Frank C Krieger and Michael S Ding Approved for public release; distribution unlimited...Laboratory Gas Control and Thermal Modeling Methods for Pressed Pellet and Fast Rise Thin-Film Thermal Batteries by Frank C Krieger and Michael S...Batteries 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Frank C Krieger and Michael S Ding 5d. PROJECT NUMBER

Correlation between nano-scale microstructural behavior and the performance of ZnO thin-film transistors.

PubMed

Ahn, Cheol Hyoun; Lee, Ju Ho; Lee, Jeong Yong; Cho, Hyung Koun

2014-12-01

Binary ZnO active layers possessing a polycrystalline structure were deposited with various argon/oxygen flow ratios at 250 degrees C via sputtering. Then ZnO thin-film-transistors (TFTs) were fabricated without additional thermal treatments. As the oxygen content increased during the deposition, the preferred orientation along the (0002) was weakened and the rotation of the grains increased, and furthermore, less conducting films were observed. On the other hand, the reduced oxygen flow rate induced the formation of amorphous-like transition layers during the initial growth due to a high growth rate and high energetic bombardment of the adatoms. As a result, the amorphous phases at the gate dielectric/channel interface were responsible for the formation of a hump shape in the subthreshold region of the TFT transfer curve. In addition, the relationship between the crystal properties and the shift in the threshold voltage was experimentally confirmed by a hysteresis test.

Study of molybdenum-aluminum interdiffusion kinetics and contact resistance for VLSI applications

NASA Astrophysics Data System (ADS)

Singh, R. N.; Brown, D. M.; Kim, M. J.; Smith, G. A.

1985-12-01

Interdiffusion barrier characteristics of molybdenum thin film with aluminum-1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Al-1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al-1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al-1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time-temperature processing regime is proposed.

Transition mechanism of the reaction interface of the thermal decomposition of calcite

NASA Astrophysics Data System (ADS)

Li, Zhi; Zhao, Zhen; Wang, Qi; Wang, Guocheng

2018-06-01

Even the reaction layer (excited state CaCO3) is so thin that it is difficult to detect, it is significantly restrict the orientation of the solid product (excited state CaO) of the thermal decomposition of calcite. Quantum chemical calculation with GGA-PW91 functional reveals that the ground-state (CaCO3)m clusters are more stable than the hybrid objects (CaCO3)m-(CaO)n clusters. The lowest-energy (CaCO3)m clusters are more kinetically stable than that of (CaCO3)m-n(CaO)n clusters and then than that of (CaO)n clusters except (CaCO3)(CaO)3 clusters from the HOMO-LUMO gaps. (CaCO3)2 clusters should co-exist at room temperature and they prefer to decompose with the temperature increasing.

Oxidation Control with Chromate Pretreatment of MCrAlY Unmelted Particle and Bond Coat in Thermal Barrier Systems

NASA Astrophysics Data System (ADS)

Yamano, Hideaki; Tani, Kazumi; Harada, Yoshio; Teratani, Takema

2008-06-01

MCrAlY alloy bond coat is widely used in thermal barrier coating (TBC) systems to protect substrates from high-temperature oxidizing environments. However, failure of the ceramic topcoat can occur due to a thermally grown oxide (TGO) that grows at the interface between the bond coat and the topcoat. In this study, the effect of chromate treatment was investigated. Prior to topcoat deposition, a thin film of Cr2O3 was formed on the bond coat surface. High-temperature oxidation tests were carried out, and the oxidation rates were determined by inspection of cross sections. Similar oxidation tests were carried out using MCrAlY powder material assumed to be unmelted particles. As a result, the chromate-treated bond coat showed outstanding oxidation resistance. Calculations that take into account the oxidation of particles in the topcoat indicated the generation of internal stress to cause local fracture of the topcoat.

Thermo-Oxidative Stability of Graphite/PMR-15 Composites: Effect of Fiber Surface Modification on Composite Shear Properties

NASA Technical Reports Server (NTRS)

Madhukar, Madhu S.; Bowles, Kenneth J.; Papadopolous, Demetrios S.

1994-01-01

Experiments were conducted to establish a correlation between the weight loss of a polyimide (PMR- 15) matrix and graphite fibers and the in-plane shear properties of their unidirectional composites subjected to different isothermal aging times up to 1000 hr at 316 C. The role of fiber surface treatment on the composite degradation during the thermo-oxidative aging was investigated by using A4 graphite fibers with three surface modifications: untreated (AU-4), surface treated (AS-4), and surface treated and sized with an epoxy-compatible sizing (AS-4G). The weight loss of the matrix fibers, and composites was determined during the aging. The effect of thermal aging was seen in all the fiber samples in terms of weight loss and reduction in fiber diameter. Calculated values of weight loss fluxes for different surfaces of rectangular unidirectional composite plates showed that the largest weight loss occurred at those cut surfaces where fibers were perpendicular to the surface. Consequently, the largest amount of damage was also noted on these cut surfaces. Optical observation of the neat matrix and composite plates subjected to different aging times revealed that the degradation (such as matrix microcracking and void growth) occurred in a thin surface layer near the specimen edges. The in-plane shear modulus of the composites was unaffected by the fiber surface treatment and the thermal aging. The shear strength of the composites with the untreated fibers was the lowest and it decreased with aging. A fracture surface examination of the composites with untreated fibers suggested that the weak interface allowed the oxidation reaction to proceed along the interface and thus expose the inner material to further oxidation. The results indicated that the fiber-matrix interface affected the composite degradation process during its thermal aging and that the the weak interface accelerated the composite degradation.

Interface-based two-way tuning of the in-plane thermal transport in nanofilms

NASA Astrophysics Data System (ADS)

Hua, Yu-Chao; Cao, Bing-Yang

2018-03-01

Here, the two-way tuning of in-plane thermal transport is obtained in the bi-layer nanofilms with an interfacial effect by using the Boltzmann transport equation (BTE) and the phonon Monte Carlo (MC) technique. A thermal conductivity model was derived from the BTE and verified by the MC simulations. Both the model and the MC simulations indicate that the tuning of the thermal transport can be bidirectional (reduced or enhanced), depending on the interface conditions (i.e., roughness and adhesion energy) and the phonon property dissimilarity at the interface. For the identical-material interface, the emergence of thermal conductivity variation requires two conditions: (a) the interface is not completely specular and (b) the transmission specularity parameter differs from the reflection specularity parameter at the interface. When the transmission specularity parameter is larger than the reflection specularity parameter at the interface, the thermal conductivity improvement effect emerges, whereas the thermal conductivity reduction effect occurs. For the disparate-material interface, the phonon property perturbation near the interface causes the thermal conductivity variation, even when neither the above two conditions are satisfied. The mean free path ratio (γ) between the disparate materials was defined to characterize the phonon property dissimilarity. γ > 1 can lead to the thermal conductivity improvement effect, while γ < 1 corresponds to the thermal conductivity reduction effect. Our work provides a more in-depth understanding of the interfacial effect on the nanoscale thermal transport, with an applicable predictive model, which can be helpful for predicting and manipulating phonon transport in nanofilms.

Temperature dependent dielectric behavior of sol-gel grown Y0.95Ca0.05MnO3/Si junction

NASA Astrophysics Data System (ADS)

Dhruv, Davit; Joshi, Zalak; Solanki, Sapana; Sagapariya, Khushal; Makwana, Pratima; Kansara, S. B.; Joshi, A. D.; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

2017-05-01

We have successfully fabricated divalent doped Y0.95Ca0.05MnO3 film on (100) single crystalline n-type Si substrate by spin coating assisted chemical solution deposition technique. The X-ray diffraction (XRD) pattern of thin film depicts that the film has (h00) directional growth on substrate. Thin film possesses -1.4% compressive strain at the interface level and thin film thickness is found to be ˜ 78nm. Dielectric property of film has been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at temperatures 150 to 300K. Real dielectric permittivity decreases and imaginary dielectric permittivity increases with increasing applied frequency. Furthermore, at low temperatures, higher dielectric is observed in all the frequency range studied and it decreases with increasing temperature due to thermal excitation induced increased charge carrier movements across the film lattice. The relaxation mechanism of Y0.95Ca0.05MnO3 film has been understood through cole-cole plots.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

Modeling of Rapid Solidification with Undercooling Effect During Droplet Flattening on a Substrate in Coating Formation

NASA Astrophysics Data System (ADS)

Shukla, Rajesh Kumar; Patel, Virendra; Kumar, Arvind

2018-02-01

The coating deposit on the substrate in thermal spray coating process develops by solidification of individual molten particle which impacts, flattens and solidifies on the surface of the substrate. Droplet flattening and solidification typically involves rapid cooling. In this paper, a model for non-equilibrium rapid solidification of a molten droplet spreading onto a substrate is presented. Transient flow during droplet impact and its subsequent spreading is considered using the volume of fluid surface tracking method which was fully coupled with the rapid solidification model. The rapid solidification model includes undercooling, nucleation, interface tracking, non-equilibrium solidification kinetics and combined heat transfer and fluid flow as required to treat a non-stagnant splat formed from droplet flattening. The model is validated with the literature results on stagnant splats. Subsequently, using the model the characteristics of the rapidly solidifying interface for non-stagnant splat, such as interface velocity and interface temperature, are described and the effect of undercooling and interfacial heat transfer coefficient are highlighted. In contrast to the stagnant splat, the non-stagnant splat considered in this study displays interesting features in the rapidly solidifying interface. These are attributed to droplet thinning and droplet recoiling that occur during the droplet spreading process.

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Cr incorporated phase transformation in Y2O3 under ion irradiation

PubMed Central

Li, N.; Yadav, S. K.; Xu, Y.; Aguiar, J. A.; Baldwin, J. K.; Wang, Y. Q.; Luo, H. M.; Misra, A.; Uberuaga, B. P.

2017-01-01

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y2O3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1st layer)/100 nm Y2O3 (2nd layer)/135 nm Fe - 20 at.% Cr (3rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y2O3 interface. Further, correlated with Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y2O3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y2O3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys. PMID:28091522

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE PAGES

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun; ...

2017-01-16

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Thin Interface Asymptotics for an Energy/Entropy Approach to Phase-Field Models with Unequal Conductivities

NASA Technical Reports Server (NTRS)

McFadden, G. B.; Wheeler, A. A.; Anderson, D. M.

1999-01-01

Karma and Rapped recently developed a new sharp interface asymptotic analysis of the phase-field equations that is especially appropriate for modeling dendritic growth at low undercoolings. Their approach relieves a stringent restriction on the interface thickness that applies in the conventional asymptotic analysis, and has the added advantage that interfacial kinetic effects can also be eliminated. However, their analysis focussed on the case of equal thermal conductivities in the solid and liquid phases; when applied to a standard phase-field model with unequal conductivities, anomalous terms arise in the limiting forms of the boundary conditions for the interfacial temperature that are not present in conventional sharp-interface solidification models, as discussed further by Almgren. In this paper we apply their asymptotic methodology to a generalized phase-field model which is derived using a thermodynamically consistent approach that is based on independent entropy and internal energy gradient functionals that include double wells in both the entropy and internal energy densities. The additional degrees of freedom associated with the generalized phased-field equations can be chosen to eliminate the anomalous terms that arise for unequal conductivities.

Radiation effects on interface reactions of U/Fe, U/(Fe+Cr), and U/(Fe+Cr+Ni)

DOE PAGES

Shao, Lin; Chen, Di; Wei, Chaochen; ...

2014-10-01

We study the effects of radiation damage on interdiffusion and intermetallic phase formation at the interfaces of U/Fe, U/(Fe + Cr), and U/(Fe + Cr + Ni) diffusion couples. Magnetron sputtering is used to deposit thin films of Fe, Fe + Cr, or Fe + Cr + Ni on U substrates to form the diffusion couples. One set of samples are thermally annealed under high vacuum at 450 C or 550 C for one hour. A second set of samples are annealed identically but with concurrent 3.5 MeV Fe++ ion irradiation. The Fe++ ion penetration depth is sufficient to reachmore » the original interfaces. Rutherford backscattering spectrometry analysis with high fidelity spectral simulations is used to obtain interdiffusion profiles, which are used to examine differences in U diffusion and intermetallic phase formation at the buried interfaces. For all three diffusion systems, Fe++ ion irradiations enhance U diffusion. Furthermore, the irradiations accelerate the formation of intermetallic phases. In U/Fe couples, for example, the unirradiated samples show typical interdiffusion governed by Fick’s laws, while the irradiated ones show step-like profiles influenced by Gibbs phase rules.« less

Interface structure and composition of MoO3/GaAs(0 0 1)

NASA Astrophysics Data System (ADS)

Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

2018-04-01

We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

Thermal conductivity model for nanoporous thin films

NASA Astrophysics Data System (ADS)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Thin film thermocouples for thermoelectric characterization of nanostructured materials

NASA Astrophysics Data System (ADS)

Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

2011-03-01

The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

Thermally induced chain orientation for improved thermal conductivity of P(VDF-TrFE) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Junnan; Tan, Aaron C.; Green, Peter F.

2017-01-01

A large increase in thermal conductivityκwas observed in a P(VDF-TrFE) thin film annealed above melting temperature due to extensive ordering of polymer backbone chains perpendicular to the substrate after recrystallization from the melt. This finding may lay out a straightforward method to improve the thin filmκof semicrystalline polymers whose chain orientation is sensitive to thermal annealing.

Surface and interface analysis of nanomaterials at microfocus beamline (BL-16) of Indus-2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Gangadhar, E-mail: rnrrsgangadhar@gmail.com; Tiwari, M. K., E-mail: mktiwati@rrcat.gov.in; Homi Bhabha National Institute, RRCAT

2016-05-06

Analysis of chemical nature and electronic structure at the interface of a thin film medium is important in many technological applications as well as to understand overall efficiency of a thin film device. Synchrotron radiation based x-ray spectroscopy is a promising technique to study interface nature of the nanomaterials with atomic resolutions. A combined x-ray reflectivity and grazing incidence x-ray fluorescence measurement facility has been recently constructed at the BL-16 microfocus beamline of Indus-2 synchrotron facility to accomplish surface-interface microstructural characterization of thin layered materials. It is also possible to analyze contaminates or adsorbed ad-atoms on the surface of themore » thin nanostructure materials. The BL-16 beamline also provides an attractive platform to perform a variety of analytical research activities especially in the field of micro x-ray fluorescence and ultra-trace elements analysis using Synchrotron radiation. We describe various salient features of the BL-16 reflectometer experimental station and the detailed description of its capabilities through the measured results, obtained for various thin layered nanomaterials.« less

Evaluating and improving the performance of thin film force sensors within body and device interfaces.

PubMed

Likitlersuang, Jirapat; Leineweber, Matthew J; Andrysek, Jan

2017-10-01

Thin film force sensors are commonly used within biomechanical systems, and at the interface of the human body and medical and non-medical devices. However, limited information is available about their performance in such applications. The aims of this study were to evaluate and determine ways to improve the performance of thin film (FlexiForce) sensors at the body/device interface. Using a custom apparatus designed to load the sensors under simulated body/device conditions, two aspects were explored relating to sensor calibration and application. The findings revealed accuracy errors of 23.3±17.6% for force measurements at the body/device interface with conventional techniques of sensor calibration and application. Applying a thin rigid disc between the sensor and human body and calibrating the sensor using compliant surfaces was found to substantially reduce measurement errors to 2.9±2.0%. The use of alternative calibration and application procedures is recommended to gain acceptable measurement performance from thin film force sensors in body/device applications. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

CNT-based Thermal Interface Materials for Load-Bearing Aerospace Applications

DTIC Science & Technology

2012-08-01

CNT -based Thermal Interface Materials for Load-Bearing Aerospace Applications Michael Bifano, Pankaj Kaul and Vikas Prakash (PI) Department...4. TITLE AND SUBTITLE CNT -based Thermal Interface Materials for Load-Bearing Aerospace Applications 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c...Z39-18 Objective Develop multifunctional CNT -epoxy Thermal Interface Materials (TIMs) for load bearing aerospace applications. Emphasis - To

On the photoresponse of several novel functionalized oligoacene and anthradithiophene derivatives

NASA Astrophysics Data System (ADS)

Day, Jonathan

The results of an investigation into carrier dynamics in several novel functionalized and solution-processable pentacene and anthradithiophene derivatives are reported. Measurements were made of real-time photoresponse of polycrystalline thin films of these materials to ultrafast laser pulses, on picosecond to microsecond time-scales, as well as measurements of dark current and current under steady illumination. This data was taken over varied field-strength, light intensity and temperature. The results support a model for carrier generation and transport with the following features. Carrier photo-generation is assisted weakly, if it is assisted at all, thermally or by applied fields. Carriers are initially (picosecond to nanosecond time-scales) in extended states and transport is "bandlike." Carriers then relax into more localized states, transported via thermally assisted hopping (nanosecond to second time-scales). This model was supported by further experiments with the electric behavior of films prepared from a pure anthradithophene derivative, doped with either the buckminsterfullerene C60 or with other molecular dopants. These results also show that samples with traps of known density and depth can be prepared, as a means of manipulating transport dynamics. The electronic and photo-electronic behaviors of films with self-anodized aluminum and of films with gold electrodes were compared, and a model of the particular energy profile and dynamics which exist at the different interfaces between the films and the different contacts was developed. This model views the metal-organic-metal system as an anode-to-anode Schottky strucure, whose I-V relation is shaped both by the nature of the interface dynamics for different metal contacts, and by the different distributions of space-charge in the thin film between different electrodes.

The Study of Interpenetration Length between dPS Films and PS-grafted Layers

NASA Astrophysics Data System (ADS)

Lee, Hoyeon; Jo, Seongjun; Hirata, Toyoaki; Yamada, Norifumi L.; Tanaka, Keiji; Ryu, Du Yeol

In polymer thin film system, the type of interfacial interaction is a critical parameter to determining the thermal and physical properties of polymer films. Interestingly, the interfacial energy of grafted substrates with polymer chains is remarkably altered by simply controlling grafting density, which has been referred to as autophobicity. In this study, we investigated the interpenetrating interfaces between deuterated polystyrene (dPS) and grafted substrates with the same chemical identity. PS-grafted substrates were prepared using a grafting-to approach with hydroxyl end-functionalized polystyrene (PSOH) in a dry brush regime, where the brush thickness and grafting density were determined based on the chain length (or molecular weight, Mn) of PSOHs. The interpenetration lengths (ξ) at interfaces between dPS and PS-grafted layers were characterized using neutron reflectivity (NR) measurements (performed at the SOFIA beam-line at J-PARC, Japan). Academic adviser.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

White organic light-emitting diodes with ultra-thin mixed emitting layer

NASA Astrophysics Data System (ADS)

Jeon, T.; Forget, S.; Chenais, S.; Geffroy, B.; Tondelier, D.; Bonnassieux, Y.; Ishow, E.

2012-02-01

White light can be obtained from Organic Light Emitting Diodes by mixing three primary colors, (i.e. red, green and blue) or two complementary colors in the emissive layer. In order to improve the efficiency and stability of the devices, a host-guest system is generally used as an emitting layer. However, the color balance to obtain white light is difficult to control and optimize because the spectrum is very sensitive to doping concentration (especially when a small amount of material is used). We use here an ultra-thin mixed emitting layer (UML) deposited by thermal evaporation to fabricate white organic light emitting diodes (WOLEDs) without co-evaporation. The UML was inserted in the hole-transporting layer consisting of 4, 4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (α-NPB) instead of using a conventional doping process. The UML was formed from a single evaporation boat containing a mixture of two dipolar starbust triarylamine molecules (fvin and fcho) presenting very similar structures and thermal properties and emitting in complementary spectral regions (orange and blue respectively) and mixed according to their weight ratio. The composition of the UML specifically allows for fine tuning of the emission color despite its very thin thickness down to 1 nm. Competitive energy transfer processes from fcho and the host interface toward fvin are key parameters to control the relative intensity between red and blue emission. White light with very good CIE 1931 color coordinate (0.34, 0.34) was obtained by simply adjusting the UML film composition.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

Thermal force induced by the presence of a particle near a solidifying interface.

PubMed

Hadji, L

2001-11-01

The presence of a foreign particle in the melt, ahead of a solid-liquid interface, leads to the onset of interfacial deformations if the thermal conductivity of the particle, k(p), differs from that of the melt, k(l). In this paper, the influence of the thermal conductivity contrast on the interaction between the solidifying interface and the particle is quantified. We show that the interface distortion gives rise to a thermal force whose expression is given by F(th)=2piLGa3(1-alpha)/(2+alpha)T(m), where L is the latent heat of fusion per unit volume, T(m) is the melting point, a is the particle's radius, G the thermal gradient in the liquid phase and alpha=k(p)/k(l). The derivation makes use of the following assumptions: (i) the particle is small compared to the horizontal extent of the interface, (ii) the particle is placed in the near proximity of the deformable solid-liquid interface, and (iii) the interface is practically immobile in the calculation of the thermal field, i.e., V

Temperature dependent infrared nano-imaging of La0.67Sr0.33MnO3 thin film

NASA Astrophysics Data System (ADS)

Xu, Peng; Huffman, T. J.; Hae Kwak, In; Biswas, Amlan; Qazilbash, M. M.

2018-01-01

We investigate the temperature dependence of infrared properties at nanometer length scales in La0.67Sr0.33MnO3 (LSMO) thin film with a thickness of 47 unit cells grown on SrTiO3 substrate. The infrared nano-imaging experiments were performed using a near-field optical microscope in conjunction with a variable temperature heating stage. The near-field infrared data is consistent with the bulk of the LSMO film undergoing the thermally-driven non-percolative second-order transition from a metallic, ferromagnetic phase to an insulating, paramagnetic phase. We find persistent infrared contrast on the nanoscale that is independent of temperature and which we attribute to two novel phases with different conductivities coexisting in the vicinity of the film-substrate interface. These two coexisting phases at the film-substrate interface do not undergo the metal-insulator transition (MIT) and hence are different from the metallic, ferromagnetic and insulating, paramagnetic phases in the bulk of the film. At temperatures approaching the nominal MIT temperature, repeated scans of the same microscopic area at constant temperature reveal bimodal fluctuation of the near-field infrared amplitude. We interpret this phenomenon as slow, critical fluctuations of the conductivity in the bulk of the LSMO film.

Controlling the Pore Size of Mesoporous Carbon Thin Films through Thermal and Solvent Annealing.

PubMed

Zhou, Zhengping; Liu, Guoliang

2017-04-01

Herein an approach to controlling the pore size of mesoporous carbon thin films from metal-free polyacrylonitrile-containing block copolymers is described. A high-molecular-weight poly(acrylonitrile-block-methyl methacrylate) (PAN-b-PMMA) is synthesized via reversible addition-fragmentation chain transfer (RAFT) polymerization. The authors systematically investigate the self-assembly behavior of PAN-b-PMMA thin films during thermal and solvent annealing, as well as the pore size of mesoporous carbon thin films after pyrolysis. The as-spin-coated PAN-b-PMMA is microphase-separated into uniformly spaced globular nanostructures, and these globular nanostructures evolve into various morphologies after thermal or solvent annealing. Surprisingly, through thermal annealing and subsequent pyrolysis of PAN-b-PMMA into mesoporous carbon thin films, the pore size and center-to-center spacing increase significantly with thermal annealing temperature, different from most block copolymers. In addition, the choice of solvent in solvent annealing strongly influences the block copolymer nanostructure and the pore size of mesoporous carbon thin films. The discoveries herein provide a simple strategy to control the pore size of mesoporous carbon thin films by tuning thermal or solvent annealing conditions, instead of synthesizing a series of block copolymers of various molecular weights and compositions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced thermal conductance of polymer composites through embedding aligned carbon nanofibers

DOE PAGES

Nicholas, Roberts; Hensley, Dale K.; Wood, David

2016-07-08

The focus of this work is to find a more efficient method of enhancing the thermal conductance of polymer thin films. This work compares polymer thin films embedded with randomly oriented carbon nanotubes to those with vertically aligned carbon nanofibers. Thin films embedded with carbon nanofibers demonstrated a similar thermal conductance between 40–60 μm and a higher thermal conductance between 25–40 μm than films embedded with carbon nanotubes with similar volume fractions even though carbon nanotubes have a higher thermal conductivity than carbon nanofibers

Enhanced thermal conductance of polymer composites through embedding aligned carbon nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nicholas, Roberts; Hensley, Dale K.; Wood, David

The focus of this work is to find a more efficient method of enhancing the thermal conductance of polymer thin films. This work compares polymer thin films embedded with randomly oriented carbon nanotubes to those with vertically aligned carbon nanofibers. Thin films embedded with carbon nanofibers demonstrated a similar thermal conductance between 40–60 μm and a higher thermal conductance between 25–40 μm than films embedded with carbon nanotubes with similar volume fractions even though carbon nanotubes have a higher thermal conductivity than carbon nanofibers

Thermal Cycling of Thin and Thick Ply Composites

NASA Technical Reports Server (NTRS)

Tompkins, Stephen S.; Shen, James Y.; Lavoie, Andre J.

1994-01-01

An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE's of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE's of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.

Engineering Interface Structures and Thermal Stabilities via SPD Processing in Bulk Nanostructured Metals

DOE PAGES

Zheng, Shijian; Carpenter, John S.; McCabe, Rodney J.; ...

2014-02-27

Nanostructured metals achieve extraordinary strength but suffer from low thermal stability, both a consequence of a high fraction of interfaces. Overcoming this tradeoff relies on making the interfaces themselves thermally stable. In this paper, we show that the atomic structures of bi-metal interfaces in macroscale nanomaterials suitable for engineering structures can be significantly altered via changing the severe plastic deformation (SPD) processing pathway. Two types of interfaces are formed, both exhibiting a regular atomic structure and providing for excellent thermal stability, up to more than half the melting temperature of one of the constituents. Most importantly, the thermal stability ofmore » one is found to be significantly better than the other, indicating the exciting potential to control and optimize macroscale robustness via atomic-scale bimetal interface tuning. As a result, we demonstrate an innovative way to engineer pristine bimetal interfaces for a new class of simultaneously strong and thermally stable materials.« less

Thermal Interface Comparisons Under Flight Like Conditions

NASA Technical Reports Server (NTRS)

Rodriquez-Ruiz, Juan

2008-01-01

Thermal interface materials are used in bolted interfaces to promote good thermal conduction between the two. The mounting surface can include panels, heat pipes, electronics boxes, etc.. . On Lunar Reconnaissance Orbiter (LRO) project the results are directly applicable: a) Several high power avionics boxes b) Several interfaces from RWA to radiator through heat pipe network

Tools to Study Interfaces for Superconducting, Thermoelectric, and Magnetic Materials at the University of Houston

DTIC Science & Technology

2016-09-01

The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition, and morphology, will...used on our sputtering system to fabricate thin films with interfaces. - The electronic structures of these materials will be investigated using the...magnetization/transport measurements. The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition

Texture formation in FePt thin films via thermal stress management

NASA Astrophysics Data System (ADS)

Rasmussen, P.; Rui, X.; Shield, J. E.

2005-05-01

The transformation variant of the fcc to fct transformation in FePt thin films was tailored by controlling the stresses in the thin films, thereby allowing selection of in- or out-of-plane c-axis orientation. FePt thin films were deposited at ambient temperature on several substrates with differing coefficients of thermal expansion relative to the FePt, which generated thermal stresses during the ordering heat treatment. X-ray diffraction analysis revealed preferential out-of-plane c-axis orientation for FePt films deposited on substrates with a similar coefficients of thermal expansion, and random orientation for FePt films deposited on substrates with a very low coefficient of thermal expansion, which is consistent with theoretical analysis when considering residual stresses.

Continuum and crystal strain gradient plasticity with energetic and dissipative length scales

NASA Astrophysics Data System (ADS)

Faghihi, Danial

This work, standing as an attempt to understand and mathematically model the small scale materials thermal and mechanical responses by the aid of Materials Science fundamentals, Continuum Solid Mechanics, Misro-scale experimental observations, and Numerical methods. Since conventional continuum plasticity and heat transfer theories, based on the local thermodynamic equilibrium, do not account for the microstructural characteristics of materials, they cannot be used to adequately address the observed mechanical and thermal response of the micro-scale metallic structures. Some of these cases, which are considered in this dissertation, include the dependency of thin films strength on the width of the sample and diffusive-ballistic response of temperature in the course of heat transfer. A thermodynamic-based higher order gradient framework is developed in order to characterize the mechanical and thermal behavior of metals in small volume and on the fast transient time. The concept of the thermal activation energy, the dislocations interaction mechanisms, nonlocal energy exchange between energy carriers and phonon-electrons interactions are taken into consideration in proposing the thermodynamic potentials such as Helmholtz free energy and rate of dissipation. The same approach is also adopted to incorporate the effect of the material microstructural interface between two materials (e.g. grain boundary in crystals) into the formulation. The developed grain boundary flow rule accounts for the energy storage at the grain boundary due to the dislocation pile up as well as energy dissipation caused by the dislocation transfer through the grain boundary. Some of the abovementioned responses of small scale metallic compounds are addressed by means of the numerical implementation of the developed framework within the finite element context. In this regard, both displacement and plastic strain fields are independently discretized and the numerical implementation is performed in the finite element program ABAQUS/standard via the user element subroutine UEL. Using this numerical capability, an extensive study is conducted on the major characteristics of the proposed theories for bulk and interface such as size effect on yield and kinematic hardening, features of boundary layer formation, thermal softening and grain boundary weakening, and the effect of soft and stiff interfaces.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Annular inhomogeneities with eigenstrain and interphase modeling

NASA Astrophysics Data System (ADS)

Markenscoff, Xanthippi; Dundurs, John

2014-03-01

Two and three-dimensional analytical solutions for an inhomogeneity annulus/ring (of arbitrary thickness) with eigenstrain are presented. The stresses in the core may become tensile (for dilatational eigenstrain in the annulus) depending on the relative shear moduli. For shear eigenstrain, an “interface rotation” and rotation jumps at the interphase also occur, consistent with the Frank-Bilby interface model. A Taylor series expansion for small thickness of the annulus is obtained to the second-order as to model thin interphases, with the limit agreeing with the Gurtin-Murdoch surface membrane, but also accounting for curvature effects.. The Eshelby “driving forces” on a boundary with eigenstrain are calculated, and for small, but finite, interphase thicknesses they account for the interaction of the two interfaces of the layer, and the next order term may induce instabilities, for some bimaterial combinations, if it becomes large enough to render the driving force zero. It is also proven that for 2-D inhomogeneities with eigenstrain the stresses have reduced material dependence for any geometry of the inhomogeneity. The case when the outer boundary of the inhomogeneity annulus with eigenstrain is a free surface is also analyzed and agrees with classical surface tension results in the limit, but, moreover, the thick free surface terms (next order in the expansion depending on the radius) are also obtained and may induce instabilities depending on the bimaterial combinations. Applications of inhomogeneity annuluses with eigenstrain are wide and include interphases in thermal barrier coatings and coated particles in electrically/thermally conductive adhesives.

Tailoring Thin Film-Lacquer Coatings for Space Application

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Strong modification of thin film properties due to screening across the interface

NASA Astrophysics Data System (ADS)

Altendorf, S. G.; Reisner, A.; Tam, B.; Meneghin, F.; Wirth, S.; Tjeng, L. H.

2018-04-01

We report on our investigation of the influence of screening across the interface on the properties of semiconducting thin films. Using EuO as a well-defined model material, layers of various thickness deposited on yttria-stabilized zirconia (100) substrates were covered half with Mg metal and half with the wide-band-gap insulator MgO. We observed that the Curie temperature for the thinnest films is significantly higher for the part which is interfaced with the metal compared to the part which is interfaced with the insulator. We infer that the proximity of a polarizable medium reduces the energies of virtual charge excitations and thus increases the effective exchange interactions, a strong effect that can be utilized systematically for the design of thin film and multilayer systems.

Two-scale homogenization to determine effective parameters of thin metallic-structured films

PubMed Central

Marigo, Jean-Jacques

2016-01-01

We present a homogenization method based on matched asymptotic expansion technique to derive effective transmission conditions of thin structured films. The method leads unambiguously to effective parameters of the interface which define jump conditions or boundary conditions at an equivalent zero thickness interface. The homogenized interface model is presented in the context of electromagnetic waves for metallic inclusions associated with Neumann or Dirichlet boundary conditions for transverse electric or transverse magnetic wave polarization. By comparison with full-wave simulations, the model is shown to be valid for thin interfaces up to thicknesses close to the wavelength. We also compare our effective conditions with the two-sided impedance conditions obtained in transmission line theory and to the so-called generalized sheet transition conditions. PMID:27616916

Interface mediated enhanced mixing of multilayered Ni-Bi thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Siva, V.; Chettah, A.; Ojha, S.; Tripathi, A.; Kanjilal, D.; Sahoo, Pratap K.

2017-10-01

We report the effect of ion beam mixing of Ni/Bi multilayers using 100 MeV Au ions as a function of irradiation fluences. X-ray diffraction study reveals the higher magnitude of NiBi3 and NiBi phases compared to elemental Ni and Bi after ion irradiation. We observe an evolution of grainy structures to a molten-like surface with increasing ion fluences. These features were also reflected in the Rutherford Backscattering spectrometry spectra, in terms of the enhanced mixing with increasing ion fluences. The experimental findings were understood on the basis of inelastic thermal spike model calculations.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Low temperature storage container for transporting perishables to space station

NASA Technical Reports Server (NTRS)

Dean, William G (Inventor); Owen, James W. (Inventor)

1988-01-01

This invention is directed to the long term storage of frozen and refrigerated food and biological samples by the space shuttle to the space station. A storage container is utilized which has a passive system so that fluid/thermal and electrical interfaces with the logistics module is not required. The container for storage comprises two units, each having an inner storage shell and an outer shell receiving the inner shell and spaced about it. The novelty appears to lie in the integration of thermally efficient cryogenic storage techniques with phase change materials, including the multilayer metalized surface thin plastic film insulation and the vacuum between the shells. Additionally the fiberglass constructed shells having fiberglass honeycomb portions, and the lining of the space between the shells with foil combine to form a storage container which may keep food and biological samples at very low temperatures for very long periods of time utilizing a passive system.

A damage mechanics based general purpose interface/contact element

NASA Astrophysics Data System (ADS)

Yan, Chengyong

Most of the microelectronics packaging structures consist of layered substrates connected with bonding materials, such as solder or epoxy. Predicting the thermomechanical behavior of these multilayered structures is a challenging task in electronic packaging engineering. In a layered structure the most complex part is always the interfaces between the strates. Simulating the thermo-mechanical behavior of such interfaces, is the main theme of this dissertation. The most commonly used solder material, Pb-Sn alloy, has a very low melting temperature 180sp°C, so that the material demonstrates a highly viscous behavior. And, creep usually dominates the failure mechanism. Hence, the theory of viscoplasticity is adapted to describe the constitutive behavior. In a multilayered assembly each layer has a different coefficient of thermal expansion. Under thermal cycling, due to heat dissipated from circuits, interfaces and interconnects experience low cycle fatigue. Presently, the state-of-the art damage mechanics model used for fatigue life predictions is based on Kachanov (1986) continuum damage model. This model uses plastic strain as a damage criterion. Since plastic strain is a stress path dependent value, the criterion does not yield unique damage values for the same state of stress. In this dissertation a new damage evolution equation based on the second law of thermodynamic is proposed. The new criterion is based on the entropy of the system and it yields unique damage values for all stress paths to the final state of stress. In the electronics industry, there is a strong desire to develop fatigue free interconnections. The proposed interface/contact element can also simulate the behavior of the fatigue free Z-direction thin film interconnections as well as traditional layered interconnects. The proposed interface element can simulate behavior of a bonded interface or unbonded sliding interface, also called contact element. The proposed element was verified against laboratory test data presented in the literature. The results demonstrate that the proposed element and the damage law perform very well. The most important scientific contribution of this dissertation is the proposed damage criterion based on second law of thermodynamic and entropy of the system. The proposed general purpose interface/contact element is another contribution of this research. Compared to the previous adhoc interface elements proposed in the literature, the new one is, much more powerful and includes creep, plastic deformations, sliding, temperature, damage, cyclic behavior and fatigue life in a unified formulation.

Surface Cracking and Interface Reaction Associated Delamination Failure of Thermal and Environmental Barrier Coatings

NASA Technical Reports Server (NTRS)

Zhu, Dong-Ming; Choi, Sung R.; Eldridge, Jeffrey I.; Lee, Kang N.; Miller, Robert A.

2003-01-01

In this paper, surface cracking and interface reactions of a BSAS coating and a multi-layer ZrO2-8wt%Y2O3 and mullite/BSAS/Si thermal and environmental barrier coating system on SiC/SiC ceramic matrix composites were characterized after long-term combined laser thermal gradient and furnace cyclic tests in a water vapor containing environment. The surface cracking was analyzed based on the coating thermal gradient sintering behavior and thermal expansion mismatch stress characteristics under the thermal cyclic conditions. The interface reactions, which were largely enhanced by the coating surface cracking in the water vapor environment, were investigated in detail, and the reaction phases were identified for the coating system after the long-term exposure. The accelerated coating delamination failure was attributed to the increased delamination driving force under the thermal gradient cyclic loading and the reduced interface adhesion due to the detrimental interface reactions.

Surface Cracking and Interface Reaction Associated Delamination Failure of Thermal and Environmental Barrier Coatings

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Choi, Sung R.; Eldridge, Jeffrey I.; Lee, Kang N.; Miller, Robert A.

2003-01-01

In this paper, surface cracking and interface reactions of a BSAS coating and a multi-layer ZTO2-8wt%Y2O3 and mullite/BSAS/Si thermal and environmental barrier coating system on SiC/SiC ceramic matrix composites were characterized after long-term combined laser thermal gradient and furnace cyclic tests in a water vapor containing environment. The surface cracking was analyzed based on the coating thermal gradient sintering behavior and thermal expansion mismatch stress characteristics under the thermal cyclic conditions. The interface reactions, which were largely enhanced by the coating surface cracking in the water vapor environment, were investigated in detail, and the reaction phases were identified for the coating system after the long- term exposure. The accelerated coating delamination failure was attributed to the increased delamination driving force under the thermal gradient cyclic loading and the reduced interface adhesion due to the detrimental interface reactions.

Thermal conductance at atomically clean and disordered silicon/aluminum interfaces: A molecular dynamics simulation study

NASA Astrophysics Data System (ADS)

Ih Choi, Woon; Kim, Kwiseon; Narumanchi, Sreekant

2012-09-01

Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This indicates that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5-nm disordered interface between Si/Al were in-line with recent experimental data in the literature.

Interface Shape Control Using Localized Heating during Bridgman Growth

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Aggarwal, M. D.; Croll, A.

2008-01-01

Numerical calculations were performed to assess the effect of localized radial heating on the melt-crystal interface shape during vertical Bridgman growth. System parameters examined include the ampoule, melt and crystal thermal conductivities, the magnitude and width of localized heating, and the latent heat of crystallization. Concave interface shapes, typical of semiconductor systems, could be flattened or made convex with localized heating. Although localized heating caused shallower thermal gradients ahead of the interface, the magnitude of the localized heating required for convexity was less than that which resulted in a thermal inversion ahead of the interface. A convex interface shape was most readily achieved with ampoules of lower thermal conductivity. Increasing melt convection tended to flatten the interface, but the amount of radial heating required to achieve a convex interface was essentially independent of the convection intensity.

Coherency strain and its effect on ionic conductivity and diffusion in solid electrolytes--an improved model for nanocrystalline thin films and a review of experimental data.

PubMed

Korte, C; Keppner, J; Peters, A; Schichtel, N; Aydin, H; Janek, J

2014-11-28

A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε0 is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ0 of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG(#). An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV(#), which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid-solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The modified interface transport in group (i) is most probably caused by strain effects, misfit dislocations or disordered transition regions.

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Thermal Cycling of Thin and Thick Ply Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tompkins, S.S.; Shen, J.Y.; Lavoie, A.J.

1994-01-01

An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE`s of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE`s of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

NASA Astrophysics Data System (ADS)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Flight evaluation of Spacelab 1 payload thermal/ECS interfaces

NASA Technical Reports Server (NTRS)

Ray, C. D.; Humphries, W. R.; Patterson, W. C.

1984-01-01

The Spacelab (SL-1) thermal/Environmental Control Systems (ECS) are discussed. Preflight analyses and flight data are compared in order to validate payload to Spacelab interfaces as well as corroborate modeling/analysis techniques. In doing so, a brief description of the Spacelab 1 payload configuration and the interactive Spacelab thermal/ECS systems are given. In particular, these interfaces address equipment cooling air, thermal and fluid conditions, humidity levels, both freon and water loop temperatures and load states, as well as passive radiant environment interfaces.

Non-Maxwellian Analysis of the Transition-region Line Profiles Observed by the Interface Region Imaging Spectrograph

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudík, Jaroslav; Dzifčáková, Elena; Polito, Vanessa

2017-06-10

We investigate the nature of the spectral line profiles for transition-region (TR) ions observed with the Interface Region Imaging Spectrograph (IRIS) . In this context, we analyzed an active-region observation performed by IRIS in its 1400 Å spectral window. The TR lines are found to exhibit significant wings in their spectral profiles, which can be well fitted with a non-Maxwellian κ distribution. The fit with a κ distribution can perform better than a double-Gaussian fit, especially for the strongest line, Si iv 1402.8 Å. Typical values of κ found are about 2, occurring in a majority of spatial pixels wheremore » the TR lines are symmetric, i.e., the fit can be performed. Furthermore, all five spectral lines studied (from Si iv, O iv, and S iv) appear to have the same full-width at half-maximum irrespective of whether the line is an allowed or an intercombination transition. A similar value of κ is obtained for the electron distribution by the fitting of the line intensities relative to Si iv 1402.8 Å, if photospheric abundances are assumed. The κ distributions, however, do not remove the presence of non-thermal broadening. Instead, they actually increase the non-thermal width. This is because, for κ distributions, TR ions are formed at lower temperatures. The large observed non-thermal width lowers the opacity of the Si iv line sufficiently enough for this line to become optically thin.« less

Determining solid-fluid interface temperature distribution during phase change of cryogenic propellants using transient thermal modeling

NASA Astrophysics Data System (ADS)

Bellur, K.; Médici, E. F.; Hermanson, J. C.; Choi, C. K.; Allen, J. S.

2018-04-01

Control of boil-off of cryogenic propellants is a continuing technical challenge for long duration space missions. Predicting phase change rates of cryogenic liquids requires an accurate estimation of solid-fluid interface temperature distributions in regions where a contact line or a thin liquid film exists. This paper described a methodology to predict inner wall temperature gradients with and without evaporation using discrete temperature measurements on the outer wall of a container. Phase change experiments with liquid hydrogen and methane in cylindrical test cells of various materials and sizes were conducted at the Neutron Imaging Facility at the National Institute of Standards and Technology. Two types of tests were conducted. The first type of testing involved thermal cycling of an evacuated cell (dry) and the second involved controlled phase change with cryogenic liquids (wet). During both types of tests, temperatures were measured using Si-diode sensors mounted on the exterior surface of the test cells. Heat is transferred to the test cell by conduction through a helium exchange gas and through the cryostat sample holder. Thermal conduction through the sample holder is shown to be the dominant mode with the rate of heat transfer limited by six independent contact resistances. An iterative methodology is employed to determine contact resistances between the various components of the cryostat stick insert, test cell and lid using the dry test data. After the contact resistances are established, inner wall temperature distributions during wet tests are calculated.

Reduction of thermal stresses in continuous fiber reinforced metal matrix composites with interface layers

NASA Technical Reports Server (NTRS)

Jansson, S.; Leckie, F. A.

1990-01-01

The potential of using an interface layer to reduce thermal stresses in the matrix of composites with a mismatch in coefficients of thermal expansion of fiber and matrix was investigated. It was found that compliant layers, with properties of readily available materials, do not have the potential to reduce thermal stresses significantly. However, interface layers with high coefficient of thermal expansion can compensate for the mismatch and reduce thermal stresses in the matrix significantly.

Scanning thermal probe microscope method for the determination of thermal diffusivity of nanocomposite thin films

NASA Astrophysics Data System (ADS)

Varandani, Deepak; Agarwal, Khushboo; Brugger, Juergen; Mehta, Bodh Raj

2016-08-01

A commercial scanning thermal microscope has been upgraded to facilitate its use in estimating the radial thermal diffusivity of thin films close to room temperature. The modified setup includes a microcontroller driven microhotplate coupled with a Bluetooth module for wireless control. The microcontroller board (Arduino Leonardo) is used to generate a bias of suitable voltage amplitude and pulse duration which is applied across the microhotplate contact pads. A corresponding heat pulse from the Pt heating element (1 mm2) embedded within the microhotplate is delivered to the lower surface of the thin film (25 mm2) deposited over it. The large difference in the dimensions of the heating source and the thin film surface causes heat to flow radially outwards on the top surface of the latter. The decay of this radial heat wave as it flows outwards is recorded by the scanning thermal microscope in terms of temperature-time (T-t) profiles at varying positions around the central heating zone. A fitting procedure is suggested to extract the thermal diffusivity value from the array of T-t profiles. The efficacy of the above setup has been established by evaluating the thermal diffusivities of Bi2Te3 and Bi2Te3:Si thin film samples. Further, with only minor alterations in design the capabilities of the above setup can be extended to estimate the axial thermal diffusivity and specific heat of thin films, as a function of temperature.

Thermal phonon transport in Si thin film with dog-leg shaped asymmetric nanostructures

NASA Astrophysics Data System (ADS)

Kage, Yuta; Hagino, Harutoshi; Yanagisawa, Ryoto; Maire, Jeremie; Miyazaki, Koji; Nomura, Masahiro

2016-08-01

Thermal phonon transport in single-crystalline Si thin films with dog-leg shaped nanostructures was investigated. Thermal conductivities for the forward and backward directions were measured and compared at 5 and 295 K by micro thermoreflectance. The Si thin film with dog-leg shaped nanostructures showed lower thermal conductivities than those of nanowires and two-dimensional phononic crystals with circular holes at the same surface-to-volume ratio. However, asymmetric thermal conductivity was not observed at small temperature gradient condition in spite of the highly asymmetric shape though the size of the pattern is within thermal phonon mean free path range. We conclude that strong temperature dependent thermal conductivity is required to observe the asymmetric thermal phonon conduction in monolithic materials with asymmetric nanostructures.

The Multi-Dimensional Structure of Radiative Shocks: Suppressed Thermal X-rays and Relativistic Ion Acceleration

NASA Astrophysics Data System (ADS)

Steinberg, Elad; Metzger, Brian D.

2018-06-01

Radiative shocks, behind which gas cools faster than the dynamical time, play a key role in many astrophysical transients, including classical novae and young supernovae interacting with circumstellar material. The dense layer behind high Mach number M ≫ 1 radiative shocks is susceptible to thin-shell instabilities, creating a "corrugated" shock interface. We present two and three-dimensional hydrodynamical simulations of optically-thin radiative shocks to study their thermal radiation and acceleration of non-thermal relativistic ions. We employ a moving-mesh code and a specialized numerical technique to eliminate artificial heat conduction across grid cells. The fraction of the shock's luminosity Ltot radiated at X-ray temperatures kT_sh ≈ (3/16)μ m_p v_sh2 expected from a one-dimensional analysis is suppressed by a factor L(>T_sh/3)/L_tot ≈ 4.5/M^{4/3} for M ≈ 4-36. This suppression results in part from weak shocks driven into under-pressured cold filaments by hot shocked gas, which sap thermal energy from the latter faster than it is radiated. Combining particle-in-cell simulation results for diffusive shock acceleration with the inclination angle distribution across the shock (relative to an upstream magnetic field in the shock plane-the expected geometry for transient outflows), we predict the efficiency and energy spectrum of ion acceleration. Though negligible acceleration is predicted for adiabatic shocks, the corrugated shock front enables local regions to satisfy the quasi-parallel magnetic field geometry required for efficient acceleration, resulting in an average acceleration efficiency of ɛnth ˜ 0.005 - 0.02 for M ≈ 12-36, in agreement with modeling of the gamma-ray nova ASASSN-16ma.

Thermal flux limited electron Kapitza conductance in copper-niobium multilayers

DOE PAGES

Cheaito, Ramez; Hattar, Khalid Mikhiel; Gaskins, John T.; ...

2015-03-05

The interplay between the contributions of electron thermal flux and interface scattering to the Kapitza conductance across metal-metal interfaces through measurements of thermal conductivity of copper-niobium multilayers was studied. Thermal conductivities of copper-niobium multilayer films of period thicknesses ranging from 5.4 to 96.2 nm and sample thicknesses ranging from 962 to 2677 nm are measured by time-domain thermoreflectance over a range of temperatures from 78 to 500 K. The Kapitza conductances between the Cu and Nb interfaces in multilayer films are determined from the thermal conductivities using a series resistor model and are in good agreement with the electron diffusemore » mismatch model. The results for the thermal boundary conductance between Cu and Nb are compared to literature values for the thermal boundary conductance across Al-Cu and Pd-Ir interfaces, and demonstrate that the interface conductance in metallic systems is dictated by the temperature derivative of the electron energy flux in the metallic layers, rather than electron mean free path or scattering processes at the interface.« less

Steady-state low thermal resistance characterization apparatus: The bulk thermal tester

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burg, Brian R.; Kolly, Manuel; Blasakis, Nicolas

The reliability of microelectronic devices is largely dependent on electronic packaging, which includes heat removal. The appropriate packaging design therefore necessitates precise knowledge of the relevant material properties, including thermal resistance and thermal conductivity. Thin materials and high conductivity layers make their thermal characterization challenging. A steady state measurement technique is presented and evaluated with the purpose to characterize samples with a thermal resistance below 100 mm{sup 2} K/W. It is based on the heat flow meter bar approach made up by two copper blocks and relies exclusively on temperature measurements from thermocouples. The importance of thermocouple calibration is emphasizedmore » in order to obtain accurate temperature readings. An in depth error analysis, based on Gaussian error propagation, is carried out. An error sensitivity analysis highlights the importance of the precise knowledge of the thermal interface materials required for the measurements. Reference measurements on Mo samples reveal a measurement uncertainty in the range of 5% and most accurate measurements are obtained at high heat fluxes. Measurement techniques for homogeneous bulk samples, layered materials, and protruding cavity samples are discussed. Ultimately, a comprehensive overview of a steady state thermal characterization technique is provided, evaluating the accuracy of sample measurements with thermal resistances well below state of the art setups. Accurate characterization of materials used in heat removal applications, such as electronic packaging, will enable more efficient designs and ultimately contribute to energy savings.« less

The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

NASA Astrophysics Data System (ADS)

Jagannadham, K.

2018-01-01

TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3- ω) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-Omore » bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.« less

Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy

PubMed Central

Baeumer, Christoph; Xu, Chencheng; Gunkel, Felix; Raab, Nicolas; Heinen, Ronja Anika; Koehl, Annemarie; Dittmann, Regina

2015-01-01

Emerging electrical and magnetic properties of oxide interfaces are often dominated by the termination and stoichiometry of substrates and thin films, which depend critically on the growth conditions. Currently, these quantities have to be measured separately with different sophisticated techniques. This report will demonstrate that the analysis of angle dependent X-ray photoelectron intensity ratios provides a unique tool to determine both termination and stoichiometry simultaneously in a straightforward experiment. Fitting the experimental angle dependence with a simple analytical model directly yields both values. The model is calibrated through the determination of the termination of SrTiO3 single crystals after systematic pulsed laser deposition of sub-monolayer thin films of SrO. We then use the model to demonstrate that during homoepitaxial SrTiO3 growth, excess Sr cations are consumed in a self-organized surface termination conversion before cation defects are incorporated into the film. We show that this termination conversion results in insulating properties of interfaces between polar perovskites and SrTiO3 thin films. These insights about oxide thin film growth can be utilized for interface engineering of oxide heterostructures. In particular, they suggest a recipe for obtaining two-dimensional electron gases at thin film interfaces: SrTiO3 should be deposited slightly Ti-rich to conserve the TiO2-termination. PMID:26189436

Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

PubMed

Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

2013-03-01

The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

Light trapping in thin-film solar cells with randomly rough and hybrid textures.

PubMed

Kowalczewski, Piotr; Liscidini, Marco; Andreani, Lucio Claudio

2013-09-09

We study light-trapping in thin-film silicon solar cells with rough interfaces. We consider solar cells made of different materials (c-Si and μc-Si) to investigate the role of size and nature (direct/indirect) of the energy band gap in light trapping. By means of rigorous calculations we demonstrate that the Lambertian Limit of absorption can be obtained in a structure with an optimized rough interface. We gain insight into the light trapping mechanisms by analysing the optical properties of rough interfaces in terms of Angular Intensity Distribution (AID) and haze. Finally, we show the benefits of merging ordered and disordered photonic structures for light trapping by studying a hybrid interface, which is a combination of a rough interface and a diffraction grating. This approach gives a significant absorption enhancement for a roughness with a modest size of spatial features, assuring good electrical properties of the interface. All the structures presented in this work are compatible with present-day technologies, giving recent progress in fabrication of thin monocrystalline silicon films and nanoimprint lithography.

Use of Precious Metal-Modifed Nickel-Base Superalloys for Thin Gage Applications (Preprint)

DTIC Science & Technology

2011-04-01

superalloys are being investigated for use in thin gage applications, such as thermal protection systems or heat exchangers, due to their strength and...atomic % total) in place of the platinum and iridium. 15. SUBJECT TERMS thermal protection systems, nickel, superalloy, thermomechanical processing...use in thin gage applications, such as thermal protection systems or heat exchangers, due to their strength and inherent oxidation resistance at

NASA Tech Briefs, December 2003

NASA Technical Reports Server (NTRS)

2003-01-01

Topics covered include: Organic/Inorganic Hybrid Polymer/Clay Nanocomposites; Less-Toxic Coatings for Inhibiting Corrosion of Aluminum; Liquid Coatings for Reducing Corrosion of Steel in Concrete; Processable Polyimides Containing APB and Reactive End Caps; Rod/Coil Block Copolyimides for Ion-Conducting Membranes; Techniques for Characterizing Microwave Printed Antennas; Cylindrical Antenna With Partly Adaptive Phased-Array Feed; Command Interface ASIC - Analog Interface ASIC Chip Set; Predicting Accumulations of Ice on Aerodynamic Surfaces; Analyzing Aeroelasticity in Turbomachines; Software for Allocating Resources in the Deep Space Network; Expert Seeker; High-Speed Recording of Test Data on Hard Disks; Functionally Graded Nanophase Beryllium/Carbon Composites; Thin Thermal-Insulation Blankets for Very High Temperatures; Aerostructures Test Wing; Flight-Test Evaluation of Flutter-Prediction Methods; Piezoelectrically Actuated Microvalve for Liquid Effluents; Larger-Stroke Piezoelectrically Actuated Microvalve; Innovative, High-Pressure, Cryogenic Control Valve: Short Face-to-Face, Reduced Cost; Safer Roadside Crash Walls Would Limit Deceleration; Improved Interactive Medical-Imaging System; Scanning Microscopes Using X Rays and Microchannels; Slotting Fins of Heat Exchangers to Provide Thermal Breaks; Methane Clathrate Hydrate Prospecting; Automated Monitoring with a BSP Fault-Detection Test; Automated Monitoring with a BCP Fault-Decision Test; Vector-Ordering Filter Procedure for Data Reduction; Remote Sensing and Information Technology for Large Farms; Developments at the Advanced Design Technologies Testbed; Spore-Forming Bacteria that Resist Sterilization; and Acoustical Applications of the HHT Method.

Infrared Thermography as a Non-destructive Testing Solution for Thermal Spray Metal Coatings

NASA Astrophysics Data System (ADS)

Santangelo, Paolo E.; Allesina, Giulio; Bolelli, Giovanni; Lusvarghi, Luca; Matikainen, Ville; Vuoristo, Petri

2017-12-01

In this work, an infrared (IR) thermographic procedure was evaluated as a non-destructive testing tool to detect damage in thermal spray metallic coatings. As model systems, polished HVOF- and HVAF-sprayed Fe-based layers deposited onto steel plates were employed. Damage by external-object impingement was simulated through a cyclic impact-test apparatus, which induced circumferential and radial cracks across all model systems, and interface cracks of different sizes in distinct samples. Damaged and undamaged plates were bulk-heated to above 100 °C using an IR lamp; their free-convection cooling was then recorded by an IR thermocamera. The intentionally induced defects were hardly detectable in IR thermograms, due to IR reflection and artificial "hot" spots induced by residuals of transfer material from the impacting counterbody. As a micrometer-thin layer of black paint was applied, surface emissivity got homogenized and any artifacts were effectively suppressed, so that failed coating areas clearly showed up as "cold spots." This effect was more apparent when large interface cracks occurred. Finite-element modeling proved the physical significance of the IR-thermography approach, showing that failed coating areas are cooled by surrounding air faster than they are heated by conduction from the hot substrate, which is due to the insulating effect of cracks.

Blocking Gastric Lipase Adsorption and Displacement Processes with Viscoelastic Biopolymer Adsorption Layers.

PubMed

Scheuble, Nathalie; Lussi, Micha; Geue, Thomas; Carrière, Frédéric; Fischer, Peter

2016-10-10

Delayed fat digestion might help to fight obesity. Fat digestion begins in the stomach by adsorption of gastric lipases to oil/water interfaces. In this study we show how biopolymer covered interfaces can act as a physical barrier for recombinant dog gastric lipase (rDGL) adsorption and thus gastric lipolysis. We used β-lactoglobulin (β-lg) and thermosensitive methylated nanocrystalline cellulose (metNCC) as model biopolymers to investigate the role of interfacial fluid dynamics and morphology for interfacial displacement processes by rDGL and polysorbate 20 (P20) under gastric conditions. Moreover, the influence of the combination of the flexible β-lg and the elastic metNCC was studied. The interfaces were investigated combining interfacial techniques, such as pendant drop, interfacial shear and dilatational rheology, and neutron reflectometry. Displacement of biopolymer layers depended mainly on the fluid dynamics and thickness of the layers, both of which were drastically increased by the thermal induced gelation of metNCC at body temperature. Soft, thin β-lg interfaces were almost fully displaced from the interface, whereas the composite β-lg-metNCC layer thermogelled to a thick interfacial layer incorporating β-lg as filler material and therefore resisted higher shear forces than a pure metNCC layer. Hence, with metNCC alone lipolysis by rDGL was inhibited, whereas the layer performance could be increased by the combination with β-lg.

Effects of thermal treatment on the co-rolled U-Mo fuel foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dennis D. Keiser, Jr.; Tammy L. Trowbridge; Cynthia R. Breckenridge

2014-11-01

A monolithic fuel type is being developed to convert US high performance research and test reactors such as Advanced Test Reactor (ATR) at Idaho National Laboratory from highly enriched uranium (HEU) to low-enriched uranium (LEU). The interaction between the cladding and the U-Mo fuel meat during fuel fabrication and irradiation is known to have negative impacts on fuel performance, such as mechanical integrity and dimensional stability. In order to eliminate/minimize the direct interaction between cladding and fuel meat, a thin zirconium diffusion barrier was introduced between the cladding and U-Mo fuel meat through a co-rolling process. A complex interface betweenmore » the zirconium and U-Mo was developed during the co-rolling process. A predictable interface between zirconium and U-Mo is critical to achieve good fuel performance since the interfaces can be the weakest link in the monolithic fuel system. A post co-rolling annealing treatment is expected to create a well-controlled interface between zirconium and U-Mo. A systematic study utilizing post co-rolling annealing treatment has been carried out. Based on microscopy results, the impacts of the annealing treatment on the interface between zirconium and U-Mo will be presented and an optima annealing treatment schedule will be suggested. The effects of the annealing treatment on the fuel performance will also be discussed.« less

Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumüller, A., E-mail: alex.neumueller@next-energy.de; Sergeev, O.; Vehse, M.

In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatmentmore » at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.« less

Photo-thermal modulation of surface plasmon polariton propagation at telecommunication wavelengths.

PubMed

Kaya, S; Weeber, J-C; Zacharatos, F; Hassan, K; Bernardin, T; Cluzel, B; Fatome, J; Finot, C

2013-09-23

We report on photo-thermal modulation of thin film surface plasmon polaritons (SPP) excited at telecom wavelengths and traveling at a gold/air interface. By operating a modulated continuous-wave or a Q-switched nanosecond pump laser, we investigate the photo-thermally induced modulation of SPP propagation mediated by the temperature-dependent ohmic losses in the gold film. We use a fiber-to-fiber characterization set-up to measure accurately the modulation depth of the SPP signal under photo-thermal excitation. On the basis of these measurements, we extract the thermo-plasmonic coefficient of the SPP mode defined as the temperature derivative of the SPP damping constant. Next, we introduce a figure of merit which is relevant to characterize the impact of temperature onto the properties of bounded or weakly leaky SPP modes supported by a given metal at a given wavelength. By combining our measurements with tabulated values of the temperature-dependent imaginary part of gold dielectric function, we compute the thermo-optical coefficients (TOC) of gold at telecom wavelengths. Finally, we investigate a pulsed photo-thermal excitation of the SPP in the nanosecond regime. The experimental SPP depth of modulation obtained in this situation are found to be in fair agreement with the modulation depths computed by using our values of gold TOC.

Pressurized bellows flat contact heat exchanger interface

NASA Technical Reports Server (NTRS)

Voss, Fred E. (Inventor); Howell, Harold R. (Inventor); Winkler, Roger V. (Inventor)

1990-01-01

Disclosed is an interdigitated plate-type heat exchanger interface. The interface includes a modular interconnect to thermally connect a pair or pairs of plate-type heat exchangers to a second single or multiple plate-type heat exchanger. The modular interconnect comprises a series of parallel, plate-type heat exchangers arranged in pairs to form a slot therebetween. The plate-type heat exchangers of the second heat exchanger insert into the slots of the modular interconnect. Bellows are provided between the pairs of fins of the modular interconnect so that when the bellows are pressurized, they drive the plate-type heat exchangers of the modular interconnect toward one another, thus closing upon the second heat exchanger plates. Each end of the bellows has a part thereof a thin, membrane diaphragm which readily conforms to the contours of the heat exchanger plates of the modular interconnect when the bellows is pressurized. This ensures an even distribution of pressure on the heat exchangers of the modular interconnect thus creating substantially planar contact between the two heat exchangers. The effect of the interface of the present invention is to provide a dry connection between two heat exchangers whereby the rate of heat transfer can be varied by varying the pressure within the bellows.

Ignition Delay Associated with a Strained Strip

NASA Technical Reports Server (NTRS)

Gerk, T. J.; Karagozian, A. R.

1996-01-01

Ignition processes associated with two adjacent fuel-oxidizer interferences bounding a strained fuel strip are explored here using single-step activation energy asymptotics. Calculations are made for constant as well as temporally decaying strain fields. There possible models of ignition are determined: one in which the two interfaces ignite independently as diffusion flames; one in which the two interfaces ignite dependently and in which ignition occurs to form a single , premixed flame at very high strain rates before ignition is completely prevented. In contrast to a single, isolated interface in which ignition can be prevented by overmatching heat production with heat convection due to strain, ignition of a strained fuel strip can also be prevented if the finite extend of fuel is diluted by oxidizer more quickly than heat production can cause a positive feedback thermal runaway. These behaviors are dependent on the relative sizes of timescales associated with species and heat diffusion, with convection due to strain, and with the chemical reaction. The result here indicate that adjacent, strained species interfaces may ignite quite differently in nature from ignition of a single, strained intrface and that their interdependence should be considered as the interfaces are brought closer together in complex strain fields. Critical strain rates leading to complete ignition delay are found to be considerably smaller for the fuel strip than those for single interfaces as the fuel strip is made thin in comparison to diffusion and chemical length scales.

Influence of engineered interfaces on residual stresses and mechanical response in metal matrix composites

NASA Technical Reports Server (NTRS)

Arnold, Steven M.; Wilt, Thomas E.

1992-01-01

Because of the inherent coefficient of thermal expansion (CTE) mismatch between fiber and matrix within metal and intermetallic matrix composite systems, high residual stresses can develop under various thermal loading conditions. These conditions include cooling from processing temperature to room temperature as well as subsequent thermal cycling. As a result of these stresses, within certain composite systems, radial, circumferential, and/or longitudinal cracks have been observed to form at the fiber matrix interface region. A number of potential solutions for reducing this thermally induced residual stress field have been proposed recently. Examples of some potential solutions are high CTE fibers, fiber preheating, thermal anneal treatments, and an engineered interface. Here the focus is on designing an interface (by using a compensating/compliant layer concept) to reduce or eliminate the thermal residual stress field and, therefore, the initiation and propagation of cracks developed during thermal loading. Furthermore, the impact of the engineered interface on the composite's mechanical response when subjected to isothermal mechanical load histories is examined.

Infrared Emissivity of Tin upon Release of a 25 GPa Shock into a LiF Window

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turley, W. D., Holtkamp, D. B., Marshall, B. R., Stevens, G. D., Veeser, L. R.

We measured the emissivity of a tin sample at its interface with a lithium-fluoride window upon release of a 25 GPa shock wave from the tin into the window. Measurements were made over four wavelength bands between 1.2 and 5.4 μm. Thermal emission backgrounds from the tin, glue, and lithium fluoride were successfully removed from the reflectance signals. Emissivity changes for the sample, which was initially nearly specular, were small except for the longest wavelength band, where uncertainties were high because of poor signal-to-noise ratio at that wavelength. A thin glue layer, which bonds the sample to the window, wasmore » found to heat from reverberations of the shock wave between the tin and the lithium fluoride. At approximately 3.4 μm the thermal emission from the glue was large compared to the tin, allowing a good estimate of the glue temperature from the thermal radiance. The glue appears to remain slightly colder than the tin, thereby minimizing heat conduction into or out of the tin immediately after the shock passage.« less

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

2017-04-01

ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

NASA Astrophysics Data System (ADS)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to control the solidification interface of Cz system by adjusting heater powers. For the EFG system, parametric studies are performed to discuss the effect of several growth parameters including window opening size, argon gas flow rate and growth thermal environment on the temperature distribution, silicon tube thickness and pulling rate. Two local models are developed and integrated with the global model to investigate the detailed transport phenomena in a small region around the solidification interface including silicon crystal, silicon melt, free surface, liquid-solid interface and graphite die design. Different convection forms are taken into consideration.

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Water-Based Peeling of Thin Hydrophobic Films

NASA Astrophysics Data System (ADS)

Khodaparast, Sepideh; Boulogne, François; Poulard, Christophe; Stone, Howard A.

2017-10-01

Inks of permanent markers and waterproof cosmetics create elastic thin films upon application on a surface. Such adhesive materials are deliberately designed to exhibit water-repellent behavior. Therefore, patterns made up of these inks become resistant to moisture and cannot be cleaned by water after drying. However, we show that sufficiently slow dipping of such elastic films, which are adhered to a substrate, into a bath of pure water allows for complete removal of the hydrophobic coatings. Upon dipping, the air-water interface in the bath forms a contact line on the substrate, which exerts a capillary-induced peeling force at the edge of the hydrophobic thin film. We highlight that this capillary peeling process is more effective at lower velocities of the air-liquid interface and lower viscosities. Capillary peeling not only removes such thin films from the substrate but also transfers them flawlessly onto the air-water interface.

Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qviller, A. J., E-mail: atlejq@ife.no; Haug, H.; You, C. C.

2014-12-08

Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine themore » H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.« less

Development of a high efficiency thin silicon solar cell. [fabrication and stability tests

NASA Technical Reports Server (NTRS)

Lindmayer, J.

1976-01-01

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruffino, F.; Canino, A.; Grimaldi, M. G.

Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet density as a function of the annealing time at 873 K was investigated by Rutherford backscattering spectrometry, atomic force microscopy (AFM), and scanning electron microscopy. As a consequence of such study, the droplet clustering is shown to be a ripening process of hemispherical three-dimensional structures limited by the Au surface diffusion. The application of the ripening theory allowed usmore » to calculate the surface diffusion coefficient and all other parameters needed to describe the entire process. Furthermore, the AFM measurements allowed us to study the roughness evolution of the sputtered Au thin film and compare the experimental data with the dynamic scaling theories of growing interfaces.« less

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Meng-Fang, E-mail: LIN.MengFang@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Gao, Xu; Mitoma, Nobuhiko

The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InO{sub x}-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InO{sub x} thin-film transistors (TFTs) are higher than 8 cm{sup 2}/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InO{sub x} TFT can be stable even annealed at 150 °C for positive bias temperature stabilitymore » (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InO{sub x}/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.« less

Effects of cathode electrolyte interfacial (CEI) layer on long term cycling of all-solid-state thin-film batteries

DOE PAGES

Wang, Ziying; Lee, Jungwoo Z.; Xin, Huolin L.; ...

2016-05-30

All-solid-state lithium-ion batteries have the potential to not only push the current limits of energy density by utilizing Li metal, but also improve safety by avoiding flammable organic electrolyte. However, understanding the role of solid electrolyte – electrode interfaces will be critical to improve performance. In this paper, we conducted long term cycling on commercially available lithium cobalt oxide (LCO)/lithium phosphorus oxynitride (LiPON)/lithium (Li) cells at elevated temperature to investigate the interfacial phenomena that lead to capacity decay. STEM-EELS analysis of samples revealed a previously unreported disordered layer between the LCO cathode and LiPON electrolyte. This electrochemically inactive layer grewmore » in thickness leading to loss of capacity and increase of interfacial resistance when cycled at 80 °C. Finally, the stabilization of this layer through interfacial engineering is crucial to improve the long term performance of thin-film batteries especially under thermal stress.« less

Frequency-dependent stability of CNT Joule heaters in ionizable media and desalination processes

NASA Astrophysics Data System (ADS)

Dudchenko, Alexander V.; Chen, Chuxiao; Cardenas, Alexis; Rolf, Julianne; Jassby, David

2017-07-01

Water shortages and brine waste management are increasing challenges for coastal and inland regions, with high-salinity brines presenting a particularly challenging problem. These high-salinity waters require the use of thermally driven treatment processes, such as membrane distillation, which suffer from high complexity and cost. Here, we demonstrate how controlling the frequency of an applied alternating current at high potentials (20 Vpp) to a porous thin-film carbon nanotube (CNT)/polymer composite Joule heating element can prevent CNT degradation in ionizable environments such as high-salinity brines. By operating at sufficiently high frequencies, these porous thin-films can be directly immersed in highly ionizable environments and used as flow-through heating elements. We demonstrate that porous CNT/polymer composites can be used as self-heating membranes to directly heat high-salinity brines at the water/vapour interface of the membrane distillation element, achieving high single-pass recoveries that approach 100%, far exceeding standard membrane distillation recovery limits.

Dynamical analysis of relaxation luminescence in ZnS:Er3+ thin film devices

NASA Astrophysics Data System (ADS)

Wang, Yu-Jiang; Wu, Chen-Xu; Chen, Mou-Zhi; Huang, Mei-Chun

2003-06-01

The relaxation luminescence of ZnS:Er3+ thin film devices fabricated by thermal evaporation with two boats is studied. The dynamical processes of the luminescence of Er3+ in ZnS are described in terms of a resonant energy transfer model, assuming that the probability of collision excitation of injected electrons with luminescence centers is expressed as a Gaussian function. It is found that the frequency distribution depends on the Lorentzian function by considering the emission from excited states as a damped oscillator. Taking into consideration the energy storing effect of traps, an expression is obtained to describe a profile that contains multiple relaxation luminescence peaks using the convolution theorem. Fitting of experimental results shows that the relaxation characteristics of the electroluminescence are related to the carriers captured by bulk traps as well as by interface states. The numerical calculation carried out agrees well with the dynamical characteristics of relaxation luminescence obtained by experiments.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V.; Pahurkar, V. G.

2016-05-06

This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

Investigation of Thermal Interface Materials Using Phase-Sensitive Transient Thermoreflectance Technique: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, X.; King, C.; DeVoto, D.

2014-08-01

With increasing power density in electronics packages/modules, thermal resistances at multiple interfaces are a bottleneck to efficient heat removal from the package. In this work, the performance of thermal interface materials such as grease, thermoplastic adhesives and diffusion-bonded interfaces are characterized using the phase-sensitive transient thermoreflectance technique. A multi-layer heat conduction model was constructed and theoretical solutions were derived to obtain the relation between phase lag and the thermal/physical properties. This technique enables simultaneous extraction of the contact resistance and bulk thermal conductivity of the TIMs. With the measurements, the bulk thermal conductivity of Dow TC-5022 thermal grease (70 tomore » 75 um bondline thickness) was 3 to 5 W/(m-K) and the contact resistance was 5 to 10 mm2-K/W. For the Btech thermoplastic material (45 to 80 μm bondline thickness), the bulk thermal conductivity was 20 to 50 W/(m-K) and the contact resistance was 2 to 5 mm2-K/W. Measurements were also conducted to quantify the thermal performance of diffusion-bonded interface for power electronics applications. Results with the diffusion-bonded sample showed that the interfacial thermal resistance is more than one order of magnitude lower than those of traditional TIMs, suggesting potential pathways to efficient thermal management.« less

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

PubMed

Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

2016-05-11

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

Electrical properties of double layer dielectric structures for space technology

NASA Astrophysics Data System (ADS)

Lian, Anqing

1993-04-01

Polymeric films such as polyimide (PI) and polyethylene terephthalate (PET) are used in space technology as thermal blankets. Thin SiO2 and SiN coatings plasma deposited onto PI and PET surfaces were proposed to protect the blanket materials against the space environment. The electrical properties of this kind of dual layer dielectric structure were investigated to understand the mechanisms for suppressing charge accumulation and flashover. Bulk and surface electrical conductivities of thin single-layer PI and PET samples and of the dual layer SiO2 and SiN combinations with PI and PET were measured in a range of applied electrical fields. The capacitance voltage (CV) technique was used for analyzing charge transport and distribution in the structures. The electric current in the bulk of the SiO2/PI and SiN/PI samples was found to depend on the polarity of the electric field. Other samples did not exhibit any such polarity effect. The polarity dependence is attributed to charge trapping at the PI/plasma deposit interface. The CV characteristics of the Al-PI-SiO2-Si structure confirm that charges which can modify the local electric field can be trapped near the interface. A model is proposed to interpret the properties of the currents in dual layer structures. This model can semi-quantitatively explain all the observed results.

Measurement of effective bulk and contact resistance of gas diffusion layer under inhomogeneous compression - Part II: Thermal conductivity

NASA Astrophysics Data System (ADS)

Roy Chowdhury, Prabudhya; Vikram, Ajit; Phillips, Ryan K.; Hoorfar, Mina

2016-07-01

The gas diffusion layer (GDL) is a thin porous layer sandwiched between a bipolar plate (BPP) and a catalyst coated membrane in a fuel cell. Besides providing passage for water and gas transport from and to the catalyst layer, it is responsible for electron and heat transfer from and to the BPP. In this paper, a method has been developed to measure the GDL bulk thermal conductivity and the contact resistance at the GDL/BPP interface under inhomogeneous compression occurring in an actual fuel cell assembly. Toray carbon paper GDL TGP-H-060 was tested under a range of compression pressure of 0.34 to 1.71 MPa. The results showed that the thermal contact resistance decreases non-linearly (from 3.8 × 10-4 to 1.17 × 10-4 Km2 W-1) with increasing pressure due to increase in microscopic contact area between the GDL and BPP; while the effective bulk thermal conductivity increases (from 0.56 to 1.42 Wm-1 K-1) with increasing the compression pressure. The thermal contact resistance was found to be greater (by a factor of 1.6-2.8) than the effective bulk thermal resistance for all compression pressure ranges applied here. This measurement technique can be used to identify optimum GDL based on minimum bulk and contact resistances measured under inhomogeneous compression.

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

PubMed Central

2014-01-01

We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

Capillary bending of a thin polymer film floating on a liquid bath

NASA Astrophysics Data System (ADS)

Twohig, Timothy; Croll, Andrew B.

Thin elastic films and shells are very important in schemes for the encapsulation and protection of fluids from their environment. Capillary origami is a particularly poignant example of how useful fluid/film structures can be formed. The interactions of fluids on thin-films which themselves lie on another surface (fluid or low friction solid) need to be studied if the differences from fluid-fluid and fluid-solid film interfaces are to be fully appreciated. In this experiment, we examine the triple line that occurs when a fluid is resting on a thin polymer film which is itself floating on a second fluid. The top fluid has a high-energy air/fluid interface which can be minimized by deforming the film in a manner that reduces the total air/fluid interface. We create a one-dimensional experiment in order to isolate the basic physics that occurs as the tension of the top fluid pulls on the thin film. Notably, the 1D geometry removes all the complexity incurred by thin films in biaxial stress states (such as wrinkling, folding and crumpling) from the problem. AFOSR under the Young Investigator Program (FA9550-15-1-0168).

Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lad, Robert J.

1999-12-14

This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with filmmore » microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.« less

Thermal transport across metal–insulator interface via electron–phonon interaction.

PubMed

Zhang, Lifa; Lü, Jing-Tao; Wang, Jian-Sheng; Li, Baowen

2013-11-06

The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green's function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling.

Thermal conductivity of III-V semiconductor superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, S., E-mail: song.mei@wisc.edu; Knezevic, I., E-mail: irena.knezevic@wisc.edu

2015-11-07

This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivitiesmore » in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.« less

Analysis of discontinuities across thin inhomogeneities, groundwater/surface water interactions in river networks, and circulation about slender bodies using slit elements in the Analytic Element Method

USDA-ARS?s Scientific Manuscript database

Groundwater and surface water contain interfaces across which hydrologic functions are discontinuous. Thin elements with high hydraulic conductivity in a porous media focus groundwater, which flows through such inhomogeneities and causes an abrupt change in stream function across their interfaces, a...

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices

NASA Astrophysics Data System (ADS)

Peranio, N.; Eibl, O.; Nurnus, J.

2006-12-01

Multi-quantum-well structures of Bi2Te3 are predicted to have a high thermoelectric figure of merit ZT. Bi2Te3 thin films and Bi2Te3/Bi2(Te0.88Se0.12)3 superlattices (SLs) were grown epitaxially by molecular beam epitaxy on BaF2 substrates with periods of 12 and 6nm, respectively. Reflection high-energy electron diffraction confirmed a layer-by-layer growth, x-ray diffraction yielded the lattice parameters and SL periods and proved epitaxial growth. The in-plane transport coefficients were measured and the thin films and SL had power factors between 28 and 35μW /cmK2. The lattice thermal conductivity varied between 1.60W/mK for Bi2Te3 thin films and 1.01W/mK for a 10nm SL. The best figures of merit ZT were achieved for the SL; however, the values are slightly smaller than those in bulk materials. Thin films and superlattices were investigated in plan view and cross section by transmission electron microscopy. In the Bi2Te3 thin film and SL the dislocation density was found to be 2×1010cm-2. Bending of the SL with amplitudes of 30nm (12nm SL) and 15nm (6nm SL) and a wavelength of 400nm was determined. Threading dislocations were found with a density greater than 2×109cm-2. The superlattice interfaces are strongly bent in the region of the threading dislocations, undisturbed regions have a maximum lateral sie of 500nm. Thin films and SL showed a structural modulation [natural nanostructure (nns)] with a wavelength of 10nm and a wave vector parallel to (1,0,10). This nns was also observed in Bi2Te3 bulk materials and turned out to be of general character for Bi2Te3. The effect of the microstructure on the thermoelectric properties is discussed. The microstructure is governed by the superlattice, the nns, and the dislocations that are present in the films. Our results indicate that the microstructure directly affects the lattice thermal conductivity. Thermopower and electrical conductivity were found to be negatively correlated and no clear dependence of the two quantities on the microstructure could be found.

Metal oxide induced charge transfer doping and band alignment of graphene electrodes for efficient organic light emitting diodes.

PubMed

Meyer, Jens; Kidambi, Piran R; Bayer, Bernhard C; Weijtens, Christ; Kuhn, Anton; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Robertson, John; Hofmann, Stephan

2014-06-20

The interface structure of graphene with thermally evaporated metal oxide layers, in particular molybdenum trioxide (MoO3), is studied combining photoemission spectroscopy, sheet resistance measurements and organic light emitting diode (OLED) characterization. Thin (<5 nm) MoO3 layers give rise to an 1.9 eV large interface dipole and a downwards bending of the MoO3 conduction band towards the Fermi level of graphene, leading to a near ideal alignment of the transport levels. The surface charge transfer manifests itself also as strong and stable p-type doping of the graphene layers, with the Fermi level downshifted by 0.25 eV and sheet resistance values consistently below 50 Ω/sq for few-layer graphene films. The combination of stable doping and highly efficient charge extraction/injection allows the demonstration of simplified graphene-based OLED device stacks with efficiencies exceeding those of standard ITO reference devices.

Directing self-assembly of gold nanoparticles in diblock copolymer scaffold

NASA Astrophysics Data System (ADS)

Li, Qifang; He, Jinbo; Glogowski, Elizabeth; Emrick, Todd; Russell, Thomas

2007-03-01

A versatile hierarchical approach for directing self -assembly of gold nanostructures with size 2-3nm in diblock copolymer scaffolds is found. Diblock copolymer polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) is used to form a regular scaffold of highly anisotropic, stripe-like domains, and controlled differential wetting by dichloromethane and thermal annealing guides gold nanoparticles with half hydrophilic ligand to aggregate selectively along the scaffold, producing highly organized metal nanostructures. In as-cast block-copolymer and gold nanoparticles thin films, micelle structure and gold nanoparticles random distribution on scaffold are typically observed. However, samples annealed in dichloromethane exhibit well-defined short-range ordered nanostructure with gold nanoparticles located at the interface of PS and P2VP nanoscale domain. After annealing at 170 C, the gold nanoparticles at interface migrated into the middle of P2VP phase and exhibited long-range ordered hierarchical structures. Synergistic interactions between the gold nanoparticles and the PS-b-P2VP caused an orientation of the microdomains normal to the film surface.

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

NASA Astrophysics Data System (ADS)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Features of the rupture of free hanging liquid film under the action of a thermal load

NASA Astrophysics Data System (ADS)

Ovcharova, Alla S.

2011-10-01

We consider a deformation and a rupture of a thin liquid film which is hanging between two solid flat walls under the action of concentrated thermal load action. A two-dimensional model is applied to describe the motion of thin layers of viscous non-isothermal liquid under micro-gravity conditions. For flow simulation, two-dimensional Navier-Stokes equations are used. A computational analysis of the influence of thermal loads on the deformation and the rupture behavior of the thin freely hanging film is carried out. It is shown that the rupture of the thin film with generation of a droplet can occur under the thermal beam of specific width acting on the free surface of the film. The results of the model problem solutions are presented.

Intercalated water layers promote thermal dissipation at bio-nano interfaces.

PubMed

Wang, Yanlei; Qin, Zhao; Buehler, Markus J; Xu, Zhiping

2016-09-23

The increasing interest in developing nanodevices for biophysical and biomedical applications results in concerns about thermal management at interfaces between tissues and electronic devices. However, there is neither sufficient knowledge nor suitable tools for the characterization of thermal properties at interfaces between materials of contrasting mechanics, which are essential for design with reliability. Here we use computational simulations to quantify thermal transfer across the cell membrane-graphene interface. We find that the intercalated water displays a layered order below a critical value of ∼1 nm nanoconfinement, mediating the interfacial thermal coupling, and efficiently enhancing the thermal dissipation. We thereafter develop an analytical model to evaluate the critical value for power generation in graphene before significant heat is accumulated to disturb living tissues. These findings may provide a basis for the rational design of wearable and implantable nanodevices in biosensing and thermotherapic treatments where thermal dissipation and transport processes are crucial.

Fabrication and characterization of an SU-8 gripper actuated by a shape memory alloy thin film

NASA Astrophysics Data System (ADS)

Roch, I.; Bidaud, Ph; Collard, D.; Buchaillot, L.

2003-03-01

In this paper, we present the fabrication process of a shape memory alloy (SMA) thin film in both monolithic and hybrid configurations. This provides an effective actuation part for a gripper made of SU-8 thick photoresist. We also extensively describe and discuss the assembly of the SMA thin film with the SU-8 mechanism. Measurements show that the SU-8 gripper is able to achieve an opening action of 500 mum in amplitude at a frequency of 1 Hz. Finite element model simulations indicate that a force of 50 mN, corresponding to 400 mum of opening amplitude, should be produced by the SMA actuator. Although the assembly of the TiNi SMA thin film with the SU-8 mechanism is demonstrated, the bond reliability needs further development in order to improve the thermal behavior of the interface. In this paper, we show that SU-8 is well suited as a structural material for microelectromechanical systems (MEMS) applications. An attractive feature in the MEMS design is that the SMA generated force is well matched with the elastic properties of SU-8. From the application point of view, a SMA-actuated SU-8 high-aspect-ratio microgripper can serve as a secure means to transport microelectronics device, because it provides good grasping and safe insulation. This is also a preliminary result for the future development of biogrippers.

Superior Thermal Interface via Vertically Aligned Carbon Nanotubes Grown on Graphite Foils

DTIC Science & Technology

2012-01-01

accepted 12 November 2012) In an attempt to study the thermal transport at the interface between nanotubes and graphene, vertically aligned multiwalled...tually increases the thermal barrier in a significant manner. On the other hand, thermal transport properties of thermal tapes and thermally conductive...aforementioned study achieved superior thermal transport properties, the processing and scale-up of the developed process would be prohibitively

Interfacial Thermal Conductance Limit and Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces

DTIC Science & Technology

2013-01-01

Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene nanoribbon-silicon interfaces Ajit K...054308 (2013) Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon J. Appl. Phys. 113, 053513 (2013...2013 to 00-00-2013 4. TITLE AND SUBTITLE Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene

Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

NASA Astrophysics Data System (ADS)

Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

2018-03-01

Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Arvind, E-mail: anita@barc.gov.in; Topkar, Anita

In order to improve the gamma discrimination capability for thermal neutron measurements using silicon PIN detectors, a novel approach of use of thin epitaxial silicon PIN detectors was investigated. Thin epitaxial silicon detectors with thickness of 15 µm were developed and their performance was tested with thermal neutrons using {sup 10}B converter. The performance of this detector was compared with the performance of a 300 µm silicon detector. The results of experiments presented in this paper indicate that thin epitaxial silicon detectors can significantly improve γ discrimination for thermal neutron measurements.

Stability of Gas Hydrates on Continental Margins: Implications of Subsurface Fluid Flow

NASA Astrophysics Data System (ADS)

Nunn, J. A.

2008-12-01

Gas hydrates are found at or just below the sediment-ocean interface in continental margins settings throughout the world. They are also found on land in high latitude regions such as the north slope of Alaska. While gas hydrate occurrence is common, gas hydrates are stable under a fairly restricted range of temperatures and pressures. In a purely conductive thermal regime, near surface temperatures depend on basal heat flow, thermal conductivity of sediments, and temperature at the sediment-water or sediment-air interface. Thermal conductivity depends on porosity and sediment composition. Gas hydrates are most stable in areas of low heat flow and high thermal conductivity which produce low temperature gradients. Older margins with thin continental crust and coarse grained sediments would tend to be colder. Another potentially important control on subsurface temperatures is advective heat transport by recharge/discharge of groundwater. Upward fluid flow depresses temperature gradients over a purely conductive regime with the same heat flow which would make gas hydrates more stable. Downward fluid flow would have the opposite effect. However, regional scale fluid flow may substantially increase heat flow in discharge areas which would destabilize gas hydrates. For example, discharge of topographically driven groundwater along the coast in the Central North Slope of Alaska has increased surface heat flow in some areas by more than 50% over a purely conductive thermal regime. Fluid flow also alters the pressure regime which can affect gas hydrate stability. Modeling results suggest a positive feedback between gas hydrate formation/disassociation and fluid flow. Disassociation of gas hydrates or permafrost due to global warming could increase permeability. This could enhance fluid flow and associated heat transport causing a more rapid and/or more spatially extensive gas hydrate disassociation than predicted solely from conductive propagation of temporal changes in surface or water bottom temperature. Model results from both the North Slope of Alaska and the Gulf of Mexico are compared.

Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films

NASA Astrophysics Data System (ADS)

Zheng, Yue; Wang, Biao; Woo, C. H.

2006-02-01

Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg-Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers.

Phase formation polycrystalline vanadium oxide via thermal annealing process under controlled nitrogen pressure

NASA Astrophysics Data System (ADS)

Jessadaluk, S.; Khemasiri, N.; Rahong, S.; Rangkasikorn, A.; Kayunkid, N.; Wirunchit, S.; Horprathum, M.; Chananonnawathron, C.; Klamchuen, A.; Nukeaw, J.

2017-09-01

This article provides an approach to improve and control crystal phases of the sputtering vanadium oxide (VxOy) thin films by post-thermal annealing process. Usually, as-deposited VxOy thin films at room temperature are amorphous phase: post-thermal annealing processes (400 °C, 2 hrs) under the various nitrogen (N2) pressures are applied to improve and control the crystal phase of VxOy thin films. The crystallinity of VxOy thin films changes from amorphous to α-V2O5 phase or V9O17 polycrystalline, which depend on the pressure of N2 carrier during annealing process. Moreover, the electrical resistivity of the VxOy thin films decrease from 105 Ω cm (amorphous) to 6×10-1 Ω cm (V9O17). Base on the results, our study show a simply method to improve and control phase formation of VxOy thin films.

Tailoring Thin Film-Lacquer Coatings for Space Applications

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's then-nal control requirements, there is often a need for a variation of solar absorptance (alpha(sub s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of alpha(sub s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Structured Ionomer Thin Films at Water Interface: Molecular Dynamics Simulation Insight

DOE PAGES

Aryal, Dipak; Agrawal, Anupriya; Perahia, Dvora; ...

2017-08-23

Controlling the structure and dynamics of thin films of ionizable polymers at water interfaces is critical to their many applications. As the chemical diversity within one polymer is increased, controlling the structure and dynamics of the polymer, which is a key to their use, becomes a challenge. Here molecular dynamics simulations (MD) are used to obtain molecular insight into the structure and dynamics of thin films of one such macromolecule at the interface with water. The polymer consists of an ABCBA topology with randomly sulfonated polystyrene (C), tethered symmetrically to flexible poly(ethylene- r-propylene) blocks (B), and end-capped by a poly(more » t-butylstyrene) block (A). The compositions of the interfacial and bulk regions of thin films of the ABCBA polymers are followed as a function of exposure time to water. We find that interfacial rearrangements take place where buried ionic segments migrate toward the water interface. The hydrophobic blocks collapse and rearrange to minimize their exposure to water. In conclusion, the water that initially drives interfacial reengagements breaks the ionic clusters within the film, forming a dynamic hydrophilic internal network within the hydrophobic segments.« less

Metastability of a-SiOx:H thin films for c-Si surface passivation

NASA Astrophysics Data System (ADS)

Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

2017-01-01

The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution of hydrogen in the film revealed by FTIR spectra, and we developed a model for the effect of both treatments on the Sisbnd H bonding and the metastability shown in the lifetime of a-SiOx:H/c-Si/a-SiOx:H structure. We found that, after UV exposure, thermal annealing steps can be used as a tool for the c-Si passivation recovery and enhancement.

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems.

PubMed

Fang, Hui; Zhao, Jianing; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xue, Yeguang; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N R; Rogers, John A

2016-10-18

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO 2 ) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO 2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

Robust fabrication of thin film polyamide-TiO2 nanocomposite membranes with enhanced thermal stability and anti-biofouling propensity.

PubMed

Khorshidi, Behnam; Biswas, Ishita; Ghosh, Tanushree; Thundat, Thomas; Sadrzadeh, Mohtada

2018-01-15

The development of nano-enabled composite materials has led to a paradigm shift in the manufacture of high-performance nanocomposite membranes with enhanced permeation, thermo-mechanical, and antibacterial properties. The major challenges to the successful incorporation of nanoparticles (NPs) to polymer films are the severe aggregation of the NPs and the weak compatibility of NPs with polymers. These two phenomena lead to the formation of non-selective voids at the interface of the polymer and NPs, which adversely affect the separation performance of the membrane. To overcome these challenges, we have developed a new method for the fabrication of robust TFN reverse osmosis membranes. This approach relies on the simultaneous synthesis and surface functionalization of TiO 2 NPs in an organic solvent (heptane) via biphasic solvothermal reaction. The resulting stable suspension of the TiO 2 NPs in heptane was then utilized in the interfacial (in-situ) polymerization reaction where the NPs were entrapped within the matrix of the polyamide (PA) membrane. TiO 2 NPs of 10 nm were effectively incorporated into the thin PA layer and improved the thermal stability and anti-biofouling properties of the resulting TFN membranes. These features make our synthesized membranes potential candidates for applications where the treatment of high-temperature streams containing biomaterials is desirable.

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

PubMed Central

Fang, Hui; Yu, Ki Jun; Song, Enming; Farimani, Amir Barati; Chiang, Chia-Han; Jin, Xin; Xu, Dong; Du, Wenbo; Seo, Kyung Jin; Zhong, Yiding; Yang, Zijian; Won, Sang Min; Fang, Guanhua; Choi, Seo Woo; Chaudhuri, Santanu; Huang, Yonggang; Alam, Muhammad Ashraful; Viventi, Jonathan; Aluru, N. R.; Rogers, John A.

2016-01-01

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants. PMID:27791052

Transfer of control system interface solutions from other domains to the thermal power industry.

PubMed

Bligård, L-O; Andersson, J; Osvalder, A-L

2012-01-01

In a thermal power plant the operators' roles are to control and monitor the process to achieve efficient and safe production. To achieve this, the human-machine interfaces have a central part. The interfaces need to be updated and upgraded together with the technical functionality to maintain optimal operation. One way of achieving relevant updates is to study other domains and see how they have solved similar issues in their design solutions. The purpose of this paper is to present how interface design solution ideas can be transferred from domains with operator control to thermal power plants. In the study 15 domains were compared using a model for categorisation of human-machine systems. The result from the domain comparison showed that nuclear power, refinery and ship engine control were most similar to thermal power control. From the findings a basic interface structure and three specific display solutions were proposed for thermal power control: process parameter overview, plant overview, and feed water view. The systematic comparison of the properties of a human-machine system allowed interface designers to find suitable objects, structures and navigation logics in a range of domains that could be transferred to the thermal power domain.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Competition between dewetting and cross-linking in poly(N-vinylpyrrolidone)/polystyrene bilayer films.

PubMed

Telford, Andrew M; Thickett, Stuart C; James, Michael; Neto, Chiara

2011-12-06

We investigated the dewetting of metastable poly(N-vinylpyrrolidone) (PNVP) thin films (45 nm) on top of polystyrene (PS) thin films (58 nm) as a function of annealing temperature and molecular weight of PS (96 and 6850 kg/mol). We focused on the competition between dewetting, occurring as a result of unfavorable intermolecular interactions at the PNVP/PS interface, and spontaneous cross-linking of PNVP, occurring during thermal annealing, as we recently reported (Telford, A. M.; James, M.; Meagher, L.; Neto, C. ACS Appl. Mater. Interfaces 2010, 2, 2399-2408). Using optical microscopy, we studied how the dewetting morphology and dynamics at different temperatures depended on the relative viscosity of the top PNVP film, which increased with cross-linking time, and of the bottom PS film. In the PNVP/PS96K system, cross-linking dominated over dewetting at temperatures below 180 °C, reducing drastically nucleated hole density and their maximum size, while above 180 °C the two processes reversed, with complete dewetting occurring at 200 °C. On the other hand, the PNVP/PS6850K system never achieved advanced dewetting stages as the dewetting was slower than cross-linking in the investigated temperature range. In both systems, dewetting of the PNVP films could be avoided altogether by thermally annealing the bilayers at temperatures where cross-linking dominated. The cross-linking was characterized quantitatively using neutron reflectometry, which indicated shrinkage and densification of the PNVP film, and qualitatively through selective removal of the bottom PS film. A simple model accounting for progressive cross-linking during the dewetting process predicted well the observed hole growth profiles and produced estimates of the PNVP cross-linking rate coefficients and of the activation energy of the process, in good agreement with literature values for similar systems. © 2011 American Chemical Society

Thermophysical properties study of micro/nanoscale materials

NASA Astrophysics Data System (ADS)

Feng, Xuhui

Thermal transport in low-dimensional structure has attracted tremendous attentions because micro/nanoscale materials play crucial roles in advancing micro/nanoelectronics industry. The thermal properties are essential for understanding of the energy conversion and thermal management. To better investigate micro/nanoscale materials and characterize the thermal transport, pulse laser-assisted thermal relaxation 2 (PLTR2) and transient electrothermal (TET) are both employed to determine thermal property of various forms of materials, including thin films and nanowires. As conducting polymer, Poly(3-hexylthiophene) (P3HT) thin film is studied to understand its thermal properties variation with P3HT weight percentage. 4 P3HT solutions of different weight percentages are compounded to fabricate thin films using spin-coating technique. Experimental results indicate that weight percentage exhibits impact on thermophysical properties. When percentage changes from 2% to 7%, thermal conductivity varies from 1.29 to 1.67 W/m·K and thermal diffusivity decreases from 10-6 to 5×10-7 m2/s. Moreover, PLTR2 technique is applied to characterize the three-dimensional anisotropic thermal properties in spin-coated P3HT thin films. Raman spectra verify that the thin films embrace partially orientated P3HT molecular chains, leading to anisotropic thermal transport. Among all three directions, lowest thermal property is observed along out-of-plane direction. For in-plane characterization, anisotropic ratio is around 2 to 3, indicating that the orientation of the molecular chains has strong impact on the thermal transport along different directions. Titanium dioxide (TiO2) thin film is synthesized by electrospinning features porous structure composed by TiO2 nanowires with random orientations. The porous structure caused significant degradation of thermal properties. Effective thermal diffusivity, conductivity, and density of the films are 1.35˜3.52 × 10-6 m2/s, 0.06˜0.36 W/m·K, and 25.8˜373 kg/m3, respectively, much lower than bulk values. Then single anatase TiO2 nanowire is synthesized to understand intrinsic thermophysical properties and secondary porosity. Thermal diffusivity of nanowires varies from 1.76 to 5.08 × 10-6 m 2/s, while thermal conductivity alters from 1.38 to 6.01 W/m·K. SEM image of TiO2 nanowire shows secondary porous surface structure. In addition, nonlinear effects are also observed with experimental data. Two methods, generalized function analysis and direct capacitance derivation, are developed to suppress nonlinear effects. Effective thermal diffusivities from both modified analysis agree well with each other.

Graphene as a thin-film catalyst booster: graphene-catalyst interface plays a critical role.

PubMed

Chae, Sieun; Jin Choi, Won; Sang Chae, Soo; Jang, Seunghun; Chang, Hyunju; Lee, Tae Il; Kim, Youn Sang; Lee, Jeong-O

2017-12-08

Due to its extreme thinness, graphene can transmit some surface properties of its underlying substrate, a phenomenon referred to as graphene transparency. Here we demonstrate the application of the transparency of graphene as a protector of thin-film catalysts and a booster of their catalytic efficiency. The photocatalytic degradation of dye molecules by ZnO thin films was chosen as a model system. A ZnO thin film coated with monolayer graphene showed greater catalytic efficiency and long-term stability than did bare ZnO. Interestingly, we found the catalytic efficiency of the graphene-coated ZnO thin film to depend critically on the nature of the bottom ZnO layer; graphene transferred to a relatively rough, sputter-coated ZnO thin film showed rather poor catalytic degradation of the dye molecules while a smooth sol-gel-synthesized ZnO covered with monolayer graphene showed enhanced catalytic degradation. Based on a systematic investigation of the interface between graphene and ZnO thin films, we concluded the transparency of graphene to be critically dependent on its interface with a supporting substrate. Graphene supported on an atomically flat substrate was found to efficiently transmit the properties of the substrate, but graphene suspended on a substrate with a rough nanoscale topography was completely opaque to the substrate properties. Our experimental observations revealed the morphology of the substrate to be a key factor affecting the transparency of graphene, and should be taken into account in order to optimally apply graphene as a protector of catalytic thin films and a booster of their catalysis.

Impacts and Awards | Transportation Research | NREL

Science.gov Websites

for Si-based materials and the electrochemical lithiation and delithiation of the coated materials -cooling lab equipment New Thermal Interface Materials Deliver Ultralow Thermal Resistance for Compact Electronics Graphic of data chart showing thermal contact resistances at various interfaces. Optical Thermal

On the curvature effect of thin membranes

NASA Astrophysics Data System (ADS)

Wang, Duo; Jiao, Xiangmin; Conley, Rebecca; Glimm, James

2013-01-01

We investigate the curvature effect of a thin, curved elastic interface that separates two subdomains and exerts a pressure due to a curvature effect. This pressure, which we refer to as interface pressure, is similar to the surface tension in fluid mechanics. It is important in some applications, such as the canopy of parachutes, biological membranes of cells, balloons, airbags, etc., as it partially balances a pressure jump between the two sides of an interface. In this paper, we show that the interface pressure is equal to the trace of the matrix product of the curvature tensor and the Cauchy stress tensor in the tangent plane. We derive the theory for interfaces in both 2-D and 3-D, and present numerical discretizations for computing the quality over triangulated surfaces.

Impedance spectroscopy of the electrode-tissue interface of living heart with isoösmotic conductivity perturbation

NASA Astrophysics Data System (ADS)

Ovadia, Marc; Zavitz, Daniel H.

2004-06-01

Impedance spectroscopy was used to solve the Pt electrode interface with metabolically active perfused living heart. Three impedance spectra were observed: the Warburg impedance ( ZW∞), a single high angle constant-phase-element, and a thin-film impedance ( ZD). When characterized again after cyclic change of ionic strength (and hence conductivity κ) each interface had one of only two spectra, with exclusion of ZW∞. The in vivo interfacial impedance spectrum is thus neither single-valued nor stable in time. Because metal|living tissue interfaces are obligatory circuit elements in biosensors and electrodes in heart and brain, the multiple-valued and thin-film character of its impedance are significant.

Mechanical and thermal stability of molecularly engineered copper-silica interfaces using organosilane nanolayers

NASA Astrophysics Data System (ADS)

Gandhi, Darshan Dinesh

Future generation silicon integrated circuits requires new materials with low dielectric permittivity kappa < 2.0 and ultra-thin barrier layers (e.g., <3 nm) to create high-reliability, high-performance wiring. Preserving the structural and functional integrity of interfaces is a crucial aspect of realizing reliable integrated circuits with nanodevice components. Molecular nanolayers (MNLs) provide the unique ability to tailor interface properties by adjusting molecular termini, layering, branching or length, thereby making them attractive alternatives to conventional barrier materials. Developing a fundamental understanding of the stability and properties of MNLs at thin film interfaces, and their correlation with parameters such as terminal group chemistries molecular length and surface coverage are key to utilizing them in nanodevice applications. This work addresses some of the key challenges pertaining to modifying Cu-silica interfaces with MNLs with appropriate terminal groups. The resultant effects on, and the inter-relationships between, the chemical, mechanical and electrical properties are investigated. Modifying Cu-silica interface with MNLs results in increased Cu diffusioninduced time-to-failure when subject to electrothermal stresses. The extent of enhancement depends on the terminal chemistry of the MNLs interacting with the overlying Cu. Upon annealing, it is found that MNLs form strong covalent linkages at both Cu-MNL and MNL-silica interfaces resulting in unprecedented values of interface toughness, values exceeding 20 Jm-2. Although strong bonding at Cu-MNL and MNL-dielectric interfaces may be sufficient for blocking copper transport across polyelectrolyte MNL bilayers, strong interlayer molecular bonding is a necessary condition for interface toughening. Exposing MNLs to UV light, results in photo-oxidation of the terminal mercaptan groups. These photo-oxidized termini form strong complexes with Cu that results in enhancement by a factor-of-10 in device failure times. Using a combination of UV-exposure prior to Cu metallization and annealing after Cu metallization should result in enhanced device failure times and interface toughness, resulting in chemically isolated and mechanically strong interfaces. This work also shows that passivating Cu surfaces with MNLs can decrease surface leakage currents due to curtailed in-plane Cu transport (low voltages). Formation of strong complexes with Cu can immobilize Cu and reduce the leakage currents and result in higher breakdown voltages. Moreover, the strategy of using MNLs can be applied to passivate pore surfaces in mesoporous silica (MPS) films to suppress water uptake and Cu penetration. The molecularly passivated dielectrics (S-MPS) exhibit 50% lower fracture toughness than unfunctionalized films, and fracture closer to the Cu/S-MPS interface. Electron spectroscopy analyses show that the fracture pathway is governed by the Cu penetration depth into the MPS. Our results show that molecular passivation of porous films not only inhibit metal penetration and water uptake, but also can be used to tune the fracture pathway. The results from this thesis are of importance for harnessing MNLs for the use in future device wiring applications.

A simulation study of thinning and fuel treatments on a wildland-urban interface in eastern Oregon, USA

Treesearch

Alan A. Ager; Andrew J. McMahan; James J. Barrett; Charles W. McHugh

2007-01-01

We simulated long-term forest management activities on 16,000-ha wildland-urban interface in the Blue Mountains near La Grande, Oregon. The study area is targeted for thinning and fuels treatments on both private and Federally managed lands to address forest health and sustainability concerns and reduce the risk of severe wildfire. We modeled number of benchmark...

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) atmore » room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.« less

Temperature and pressure determination of the tin melt boundary from a combination of pyrometry, spectral reflectance, and velocity measurements along release paths

NASA Astrophysics Data System (ADS)

La Lone, Brandon; Asimow, Paul; Fatyanov, Oleg; Hixson, Robert; Stevens, Gerald

2017-06-01

Plate impact experiments were conducted on tin samples backed by LiF windows to determine the tin melt curve. Thin copper flyers were used so that a release wave followed the 30-40 GPa shock wave in the tin. The release wave at the tin-LiF interface was about 300 ns long. Two sets of experiments were conducted. In one set, spectral emissivity was measured at six wavelengths using a flashlamp illuminated integrating sphere. In the other set, thermal radiance was measured at two wavelengths. The emissivity and thermal radiance measurements were combined to obtain temperature histories of the tin-LiF interface during the release. PDV was used to obtain stress histories. All measurements were combined to obtain temperature vs. stress release paths. A kink or steepening in the release paths indicate where the releases merge onto the melt boundary, and release paths originating from different shock stresses overlap on the melt boundary. Our temperature-stress release path measurements provide a continuous segment of the tin melt boundary that is in good agreement with some of the published melt curves. This work was done by National Security Technologies, LLC, under Contract No. DE-AC52-06NA25946 with the U.S. Department of Energy, and supported by the Site-Directed Research and Development Program. DOE/NV/259463133.

Rate limits in silicon sheet growth - The connections between vertical and horizontal methods

NASA Technical Reports Server (NTRS)

Thomas, Paul D.; Brown, Robert A.

1987-01-01

Meniscus-defined techniques for the growth of thin silicon sheets fall into two categories: vertical and horizontal growth. The interactions of the temperature field and the crystal shape are analyzed for both methods using two-dimensional finite-element models which include heat transfer and capillarity. Heat transfer in vertical growth systems is dominated by conduction in the melt and the crystal, with almost flat melt/crystal interfaces that are perpendicular to the direction of growth. The high axial temperature gradients characteristic of vertical growth lead to high thermal stresses. The maximum growth rate is also limited by capillarity which can restrict the conduction of heat from the melt into the crystal. In horizontal growth the melt/crystal interface stretches across the surface of the melt pool many times the crystal thickness, and low growth rates are achievable with careful temperature control. With a moderate axial temperature gradient in the sheet a substantial portion of the latent heat conducts along the sheet and the surface of the melt pool becomes supercooled, leading to dendritic growth. The thermal supercooling is surpressed by lowering the axial gradient in the crystal; this configuration is the most desirable for the growth of high quality crystals. An expression derived from scaling analysis relating the growth rate and the crucible temperature is shown to be reliable for horizontal growth.

Interfacial Properties of Thin Films of Poly(vinyl ether)s with Architectural Design in Water

NASA Astrophysics Data System (ADS)

Oda, Yukari; Itagaki, Nozomi; Sugimoto, Sin; Kawaguchi, Daisuke; Matsuno, Hisao; Tanaka, Keiji

Precise design of primary structure and architecture of polymers leads to the well-defined structure, unique physical properties, and excellent functions not only in the bulk but also at the interfaces. We here constructed functional polymer interfaces in water based on the architectural design of poly(vinyl ether)s with oxyethylene side-chains (POEVE). A branched polymer with POEVE parts was preferentially segregated at the air interface in the matrix of poly(methyl methacrylate). As an alternative way to prepare the POEVE surface, the cross-linked hydrogel thin films were prepared. The moduli of the hydrogel films near the water interfaces, which were examined by force-distance curve measurements using atomic force microscopy, were greatly sensitive to the cross-linking density of the polymers. Diffuse interfaces of POEVE chains at the water interface make it possible to prevent the platelet adhesion on the films.

Lithospheric and crustal thinning

NASA Technical Reports Server (NTRS)

Moretti, I.

1985-01-01

In rift zones, both the crust and the lithosphere get thinner. The amplitude and the mechanism of these two thinning situations are different. The lithospheric thinning is a thermal phenomenon produced by an asthenospherical uprising under the rift zone. In some regions its amplitude can exceed 200%. This is observed under the Baikal rift where the crust is directly underlaid by the mantellic asthenosphere. The presence of hot material under rift zones induces a large negative gravity anomaly. A low seismic velocity zone linked to this thermal anomaly is also observed. During the rifting, the magmatic chambers get progressively closer from the ground surface. Simultaneously, the Moho reflector is found at shallow depth under rift zones. This crustal thinning does not exceed 50%. Tectonic stresses and vertical movements result from the two competing effects of the lithospheric and crustal thinning. On the one hand, the deep thermal anomaly induces a large doming and is associated with extensive deviatoric stresses. On the other hand, the crustal thinning involves the formation of a central valley. This subsidence is increased by the sediment loading. The purpose here is to quantify these two phenomena in order to explain the morphological and thermal evolution of rift zones.

Phonon-interface scattering in multilayer graphene on an amorphous support

PubMed Central

Sadeghi, Mir Mohammad; Jo, Insun; Shi, Li

2013-01-01

The recent studies of thermal transport in suspended, supported, and encased graphene just began to uncover the richness of two-dimensional phonon physics, which is relevant to the performance and reliability of graphene-based functional materials and devices. Among the outstanding questions are the exact causes of the suppressed basal-plane thermal conductivity measured in graphene in contact with an amorphous material, and the layer thickness needed for supported or embedded multilayer graphene (MLG) to recover the high thermal conductivity of graphite. Here we use sensitive in-plane thermal transport measurements of graphene samples on amorphous silicon dioxide to show that full recovery to the thermal conductivity of the natural graphite source has yet to occur even after the MLG thickness is increased to 34 layers, considerably thicker than previously thought. This seemingly surprising finding is explained by long intrinsic scattering mean free paths of phonons in graphite along both basal-plane and cross-plane directions, as well as partially diffuse scattering of MLG phonons by the MLG-amorphous support interface, which is treated by an interface scattering model developed for highly anisotropic materials. Based on the phonon transmission coefficient calculated from reported experimental thermal interface conductance results, phonons emerging from the interface consist of a large component that is scattered across the interface, making rational choice of the support materials a potential approach to increasing the thermal conductivity of supported MLG. PMID:24067656

Thermal Protection Supplement for Reducing Interface Thermal Mismatch

NASA Technical Reports Server (NTRS)

Stewart, David A. (Inventor); Leiser, Daniel B. (Inventor)

2017-01-01

A thermal protection system that reduces a mismatch of thermal expansion coefficients CTE between a first material layer (CTE1) and a second material layer (CTE2) at a first layer-second layer interface. A portion of aluminum borosilicate (abs) or another suitable additive (add), whose CTE value, CTE(add), satisfies (CTE(add)-CTE1)(CTE(add)-CTE2)<0, is distributed with variable additive density,.rho.(z;add), in the first material layer and/or in the second material layer, with.rho.(z;add) near the materials interface being relatively high (alternatively, relatively low) and.rho.(z;add) in a region spaced apart from the interface being relatively low (alternatively, relatively high).

Geometrically thin, hot accretion disks - Topology of the thermal equilibrium curves

NASA Technical Reports Server (NTRS)

Kusunose, Masaaki; Mineshige, Shin

1992-01-01

All the possible thermal equilibrium states of geometrically thin alpha-disks around stellar-mass black holes are presented. A (vertically) one-zone disk model is employed and it is assumed that a main energy source is viscous heating of protons and that cooling is due to bremsstrahlung and Compton scattering. There exist various branches of the thermal equilibrium solution, depending on whether disks are effectively optically thick or thin, radiation pressure-dominated or gas pressure-dominated, composed of one-temperature plasmas or of two-temperature plasmas, and with high concentration of e(+)e(-) pairs or without pairs. The thermal equilibrium curves at high temperatures (greater than or approximately equal to 10 exp 8 K) are substantially modified by the presence of e(+)e(-) pairs. The thermal stability of these branches are examined.

Thermal Conductivity and Elastic Modulus Evolution of Thermal Barrier Coatings under High Heat Flux Conditions

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Miller, Robert A.

1999-01-01

Laser high heat flux test approaches have been established to obtain critical properties of ceramic thermal barrier coatings (TBCs) under near-realistic temperature and thermal gradients that may he encountered in advanced engine systems. Thermal conductivity change kinetics of a thin ceramic coating were continuously monitored in real time at various test temperatures. A significant thermal conductivity increase was observed during the laser simulated engine heat flux tests. For a 0.25 mm thick ZrO2-8%Y2O3 coating system, the overall thermal conductivity increased from the initial value of 1.0 W/m-K to 1. 15 W/m-K, 1. 19 W/m-K and 1.5 W/m-K after 30 hour testing at surface temperatures of 990C, 1100C, and 1320C. respectively. Hardness and modulus gradients across a 1.5 mm thick TBC system were also determined as a function of laser testing time using the laser sintering/creep and micro-indentation techniques. The coating Knoop hardness values increased from the initial hardness value of 4 GPa to 5 GPa near the ceramic/bond coat interface, and to 7.5 GPa at the ceramic coating surface after 120 hour testing. The ceramic surface modulus increased from an initial value of about 70 GPa to a final value of 125 GPa. The increase in thermal conductivity and the evolution of significant hardness and modulus gradients in the TBC systems are attributed to sintering-induced micro-porosity gradients under the laser-imposed high thermal gradient conditions. The test techniques provide a viable means for obtaining coating data for use in design, development, stress modeling, and life prediction for various thermal barrier coating applications.

Measurements of thermal conductivity and the coefficient of thermal expansion for polysilicon thin films by using double-clamped beams

NASA Astrophysics Data System (ADS)

Liu, Haiyun; Wang, Lei

2018-01-01

In this paper, a test structure for simultaneously determining thermal conductivity and the coefficient of thermal expansion (CTE) of polysilicon thin film is proposed. The test structure consists of two double-clamped beams with different lengths. A theoretical model for extracting thermal conductivity and CTE based on electrothermal analysis and resonance frequency approach is developed. Both flat and buckled beams are considered in the theoretical model. The model is confirmed by finite element software ANSYS. The test structures are fabricated by surface micromachined fabrication process. Experiments are carried out in our atmosphere. Thermal conductivity and CTE of polysilicon thin film are obtained to be (29.96  ±  0.92) W · m · K-1 and (2.65  ±  0.03)  ×  10-6 K-1, respectively, with temperature ranging from 300-400 K.

Rechargeable thin-film electrochemical generator

DOEpatents

Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

2000-09-15

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Ye, Ning

Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides-silicon), interfaces with varying levels of disorder (epitaxial and non-epitaxial). The ITC values of silicides-silicon interfaces observed in this study are higher than those of other metallic interfaces to Si found in literature. Most surprisingly, it is experimentally found that ITC values are independent of interfacial quality and substrate orientation. Computationally, it is found that the non-equilibrium atomistic Green's Function technique (NEGF), which is specically designed to simulate coherent elastic phonon transport across interfaces, significantly underpredicts ITC values for CoSi2-Si interfaces, suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. In contrast, the Diffuse Mismatch Model closely mimics the experimentally observed ITC values for CoSi 2-Si, NiSi-Si and TiSi2-Si interfaces, and only slightly overestimating the same for PtSi-Si interfaces. Furthermore, the results also show that ITC is independent of degenerate doping up to doping levels of ≈1 x 1019 cm-3, indicating there is no significant direct electronic transport or transport effects which depend on long-range metal-semiconductor band alignment. Then, I study the effect of phonon band structure on ITC through measurements of epitaxial NiAl1-xGax-GaAs interfaces for varying levels of alloy composition, which independently tunes the mass of the metal's heavy atom without much affect on the lattice structure or interatomic force constants. The ITC values are found to linearly increase with increasing Ga content, consistent with the disappearance of a phonon band gap in NiAl 1-xGax films with increasing Ga content, which enhances the phonon transmission coefficients due to a better density of states overlap between the two (NiAl1-xGax, GaAs) materials. Finally, I study a unique subset of epitaxial rocksalt interfaces between the Group IV metal nitrides (TiN, ZrN, and HfN) to MgO substrates as well as ScN layers. Prior to the currrent study, TiN-MgO was the only measured interface of this type, and maintained the record for the highest reported ITC for a metal-semiconductor interface. By varying the Group IV metal, the mass of the metal's light atom was independently tuned, allowing the ability to tune the acoustic phonon frequencies in the metal without significant effect to optical phonon band structure. We find that the ITC of all the studied interfaces are quite high, significantly exceeding the DMM predictions, and in the case of XN-ScN interfaces even exceed the radiative limit for elastic phonon transport. The results imply that mechanisms such as anharmonic phonon transmission, strong cross-interfacial electron phonon coupling, or direct electric transmission are required to explain the transport. The TiN-ScN interface conductance is the highest room temperature metal-dielectric conductance ever reported.

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R. R.; Khare, Neeraj

2018-04-01

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi2Te3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi2Te3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi2Te3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics.

PubMed

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R R; Khare, Neeraj

2018-04-03

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi 2 Te 3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi 2 Te 3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi 2 Te 3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Direct observation of twin deformation in YBa2Cu3O7-x thin films by in situ nanoindentation in TEM

NASA Astrophysics Data System (ADS)

Lee, Joon Hwan; Zhang, Xinghang; Wang, Haiyan

2011-04-01

The deformation behaviors of YBa2Cu3O7-x (YBCO) thin films with twinning structures were studied via in situ nanoindentation experiments in a transmission electron microscope. The YBCO films were grown on SrTiO3 (001) substrates by pulsed laser deposition. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of the YBCO films from the directions perpendicular and parallel to the twin interfaces. The hardness measured perpendicular to the twin interfaces is ˜50% and 40% higher than that measured parallel to the twin interfaces ex situ and in situ, respectively. Detailed in situ movie analysis reveals that the twin structures play an important role in deformation and strengthening mechanisms in YBCO thin films.

Back-illuminated imager and method for making electrical and optical connections to same

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2010-01-01

Methods for bringing or exposing metal pads or traces to the backside of a backside-illuminated imager allow the pads or traces to reside on the illumination side for electrical connection. These methods provide a solution to a key packaging problem for backside thinned imagers. The methods also provide alignment marks for integrating color filters and microlenses to the imager pixels residing on the frontside of the wafer, enabling high performance multispectral and high sensitivity imagers, including those with extremely small pixel pitch. In addition, the methods incorporate a passivation layer for protection of devices against external contamination, and allow interface trap density reduction via thermal annealing. Backside-illuminated imagers with illumination side electrical connections are also disclosed.

Strikingly enhanced cooling performance for a micro-cooler using unique Cu nanowire array with high electrical conductivity and fast heat transfer behavior

NASA Astrophysics Data System (ADS)

Tan, Ming; Wang, Xiuzhen; Hao, Yanming; Deng, Yuan

2017-06-01

It was found that phonons/electrons are less scattered along (1 1 1)-preferred Cu nanowires than in ordinary structure films and that the interface of Cu nanowires electrode and thermoelectric materials are more compatible. Here highly ordered, high-crystal-quality, high-density Cu nanowire array was successfully fabricated by a magnetron sputtering method. The Cu nanowire array was successfully incorporated using mask-assisted deposition technology as electrodes for thin-film thermoelectric coolers, which would greatly improve electrical/thermal transport and enhance performance of micro-coolers. The cooling performance of the micro-cooler with Cu nanowire array electrode is over 200% higher than that of the cooler with ordinary film electrode.

Compact hematite buffer layer as a promoter of nanorod photoanode performances

NASA Astrophysics Data System (ADS)

Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

2016-10-01

The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

The effect of a non-volatile dust mantle on the energy balance of cometary surface layers

NASA Technical Reports Server (NTRS)

Koemle, Norbert I.; Steiner, Gerhard

1992-01-01

It is likely that large parts of a cometary surface layer consist of porous ices, which are covered by a thin layer of non-volatile debris, whose structure is also fluffy and porous. In this paper the results of model calculations are presented. The calculations show the effect of ice and dust pore sizes and of the dust mantle thickness upon the thermal behavior of such a dust-ice system, when it is irradiated by the sun. In particular, it is found that the average pore size of the ice and the dust material has a large influence both on the dust surface temperature and on the temperature at the dust-ice interface.

Combining Electronic and Geometric Effects of ZnO-Promoted Pt Nanocatalysts for Aqueous Phase Reforming of 1-Propanol

DOE PAGES

Lei, Yu; Lee, Sungsik; Low, Ke -Bin; ...

2016-04-26

Compared with Pt/Al 2O 3, sintering-resistant Pt nanoparticle catalysts promoted by ZnO significantly improved the reactivity and selectivity toward hydrogen formation in the aqueous phase reforming (APR) of 1-propanol. The improved performance was found to benefit from both the electronic and geometric effects of ZnO thin films. In situ small-angle X-ray scattering and scanning transmission electron microscopy showed that ZnO-promoted Pt possessed promising thermal stability under APR reaction conditions. In situ X-ray absorption spectroscopy showed clear charge transfer between ZnO and Pt nanoparticles. The improved reactivity and selectivity seemed to benefit from having both Pt-ZnO and Pt-Al 2O 3 interfaces.

Shear-Assisted Production of Few-Layer Boron Nitride Nanosheets by Supercritical CO2 Exfoliation and Its Use for Thermally Conductive Epoxy Composites.

PubMed

Tian, Xiaojuan; Li, Yun; Chen, Zhuo; Li, Qi; Hou, Liqiang; Wu, Jiaye; Tang, Yushu; Li, Yongfeng

2017-12-19

Boron nitride nanosheets (BNNS) hold the similar two-dimensional structure as graphene and unique properties complementary to graphene, which makes it attractive in application ranging from electronics to energy storage. The exfoliation of boron nitride (BN) still remains challenge and hinders the applications of BNNS. In this work, the preparation of BNNS has been realized by a shear-assisted supercritical CO 2 exfoliation process, during which supercritical CO 2 intercalates and diffuses between boron nitride layers, and then the exfoliation of BN layers is obtained in the rapid depressurization process by overcoming the van der Waals forces. Our results indicate that the bulk boron nitride has been successfully exfoliated into thin nanosheets with an average 6 layers. It is found that the produced BNNS is well-dispersed in isopropyl alcohol (IPA) with a higher extinction coefficient compared with the bulk BN. Moreover, the BNNS/epoxy composite used as thermal interface materials has been prepared. The introduction of BNNS results in a 313% enhancement in thermal conductivity. Our results demonstrate that BNNS produced by supercritical CO 2 exfoliation show great potential applications for heat dissipation of high efficiency electronics.

General theories and features of interfacial thermal transport

NASA Astrophysics Data System (ADS)

Zhou, Hangbo; Zhang, Gang

2018-03-01

A clear understanding and proper control of interfacial thermal transport is important in nanoscale device. In this review, we first discuss the theoretical methods to handle the interfacial thermal transport problem, such as the macroscopic model, molecular dynamics, lattice dynamics and modern quantum transport theories. Then we discuss various effects that can significantly affect the interfacial thermal transport, such as the formation of chemical bonds at interface, defects and interface roughness, strain and substrates, atomic species and mass ratios, structural orientations. Then importantly, we analyze the role of inelastic scatterings at the interface, and discuss its application in thermal rectifications. Finally, the challenges and promising directions are discussed.

FAST TRACK COMMUNICATION Understanding adhesion at as-deposited interfaces from ab initio thermodynamics of deposition growth: thin-film alumina on titanium carbide

NASA Astrophysics Data System (ADS)

Rohrer, Jochen; Hyldgaard, Per

2010-12-01

We investigate the chemical composition and adhesion of chemical vapour deposited thin-film alumina on TiC using and extending a recently proposed nonequilibrium method of ab initio thermodynamics of deposition growth (AIT-DG) (Rohrer and Hyldgaard 2010 Phys. Rev. B 82 045415). A previous study of this system (Rohrer et al 2010 J. Phys.: Condens. Matter 22 015004) found that use of equilibrium thermodynamics leads to predictions of a non-binding TiC/alumina interface, despite its industrial use as a wear-resistant coating. This discrepancy between equilibrium theory and experiment is resolved by the AIT-DG method which predicts interfaces with strong adhesion. The AIT-DG method combines density functional theory calculations, rate-equation modelling of the pressure evolution of the deposition environment and thermochemical data. The AIT-DG method was previously used to predict prevalent terminations of growing or as-deposited surfaces of binary materials. Here we extend the method to predict surface and interface compositions of growing or as-deposited thin films on a substrate and find that inclusion of the nonequilibrium deposition environment has important implications for the nature of buried interfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandt, Riley E.; Mangan, Niall M.; Li, Jian V.

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensitiesmore » (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.« less

TiO2 as diffusion barrier at Co/Alq3 interface studied by x-ray standing wave technique

NASA Astrophysics Data System (ADS)

Phatak Londhe, Vaishali; Gupta, A.; Ponpandian, N.; Kumar, D.; Reddy, V. R.

2018-06-01

Nano-scale diffusion at the interfaces in organic spin valve thin films plays a vital role in controlling the performance of magneto-electronic devices. In the present work, it is shown that a thin layer of titanium dioxide at the interface of Co/Alq3 can act as a good diffusion barrier. The buried interfaces of Co/Alq3/Co organic spin valve thin film has been studied using x-ray standing waves technique. A planar waveguide is formed with Alq3 layer forming the cavity and Co layers as the walls of the waveguide. Precise information about diffusion of Co into Alq3 is obtained through excitation of the waveguide modes. It is found that the top Co layer diffuses deep into the Alq3 resulting in incorporation of 3.1% Co in the Alq3 layer. Insertion of a 1.7 nm thick barrier layer of TiO2 at Co/Alq3 interface results in a drastic reduction in the diffusion of Co into Alq3 to a value of only 0.4%. This suggests a better performance of organic spin valve with diffusion barrier of TiO2.

Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin films.

PubMed

Woo, Sungmin; Lee, Sang A; Mun, Hyeona; Choi, Young Gwan; Zhung, Chan June; Shin, Soohyeon; Lacotte, Morgane; David, Adrian; Prellier, Wilfrid; Park, Tuson; Kang, Won Nam; Lee, Jong Seok; Kim, Sung Wng; Choi, Woo Seok

2018-03-01

Transition metal oxide thin films show versatile electric, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO 3 thin films using pulsed laser epitaxy. Using the epitaxial stabilization technique with an atomically flat polycrystalline SrTiO 3 substrate, an epitaxial polycrystalline SrRuO 3 thin film with the crystalline quality of each grain comparable to that of its single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced the enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to an enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Pengfei; Zhao, Lite; Liu, Jiahuan

2016-03-01

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

Using high thermal stability flexible thin film thermoelectric generator at moderate temperature

NASA Astrophysics Data System (ADS)

Zheng, Zhuang-Hao; Luo, Jing-Ting; Chen, Tian-Bao; Zhang, Xiang-Hua; Liang, Guang-Xing; Fan, Ping

2018-04-01

Flexible thin film thermoelectric devices are extensively used in the microscale industry for powering wearable electronics. In this study, comprehensive optimization was conducted in materials and connection design for fabricating a high thermal stability flexible thin film thermoelectric generator. First, the thin films in the generator, including the electrodes, were prepared by magnetron sputtering deposition. The "NiCu-Cu-NiCu" multilayer electrode structure was applied to ensure the thermal stability of the device used at moderate temperature in an air atmosphere. A design with metal layer bonding and series accordant connection was then employed. The maximum efficiency of a single PN thermocouple generator is >11%, and the output power loss of the generator is <10% after integration.

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

NASA Astrophysics Data System (ADS)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ruikang; Hu, Run, E-mail: hurun@hust.edu.cn, E-mail: luoxb@hust.edu.cn; Luo, Xiaobing, E-mail: hurun@hust.edu.cn, E-mail: luoxb@hust.edu.cn

In this study, we developed a first-principle-based full-dispersion Monte Carlo simulation method to study the anisotropic phonon transport in wurtzite GaN thin film. The input data of thermal properties in MC simulations were calculated based on the first-principle method. The anisotropy of thermal conductivity in bulk wurtzite GaN is found to be strengthened by isotopic scatterings and reduced temperature, and the anisotropy reaches 40.08% for natural bulk GaN at 100 K. With the GaN thin film thickness decreasing, the anisotropy of the out-of-plane thermal conductivity is heavily reduced due to both the ballistic transport and the less importance of the low-frequencymore » phonons with anisotropic group velocities. On the contrary, it is observed that the in-plane thermal conductivity anisotropy of the GaN thin film is strengthened by reducing the film thickness. And the anisotropy reaches 35.63% when the natural GaN thin film thickness reduces to 50 nm at 300 K with the degree of specularity being zero. The anisotropy is also improved by increasing the surface roughness of the GaN thin film.« less

Thermal conductance of metal–diamond interfaces at high pressure

DOE PAGES

Hohensee, Gregory T.; Wilson, R. B.; Cahill, David G.

2015-03-06

The thermal conductance of interfaces between metals and diamond, which has a comparatively high Debye temperature, is often greater than can be accounted for by two phonon-processes. The high pressures achievable in a diamond anvil cell can significantly extend the metal phonon density of states to higher frequencies, and can also suppress extrinsic effects by greatly stiffening interface bonding. Here we report time-domain thermoreflectance measurements of metal-diamond interface thermal conductance up to 50 GPa in the DAC for Pb, Au 0.95Pd 0.05, Pt, and Al films deposited on Type 1A natural [100] and Type 2A synthetic [110] diamond anvils. Inmore » all cases, the thermal conductances increase weakly or saturate to similar values at high pressure. Lastly, our results suggest that anharmonic conductance at metal-diamond interfaces is controlled by partial transmission processes, where a diamond phonon that inelastically scatters at the interface absorbs or emits a metal phonon.« less

Method for transferring thermal energy and electrical current in thin-film electrochemical cells

DOEpatents

Rouillard, Roger [Beloeil, CA; Domroese, Michael K [South St. Paul, MN; Hoffman, Joseph A [Minneapolis, MN; Lindeman, David D [Hudson, WI; Noel, Joseph-Robert-Gaetan [St-Hubert, CA; Radewald, Vern E [Austin, TX; Ranger, Michel [Lachine, CA; Sudano, Anthony [Laval, CA; Trice, Jennifer L [Eagan, MN; Turgeon, Thomas A [Fridley, MN

2003-05-27

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Thermal conductivity of ZrO2-4mol%Y2O3 thin coatings by pulsed thermal imaging method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Byung-Koog; Sun, Jiangang; Kim, Seongwon

Thin ZrO2-4mol% Y2O3 coatings were deposited onto ZrO2 substrates by electron beam-physical vapor deposition. The coated samples revealed a feather-like columnar microstructure. The main phase of the ZrO2-4mol% Y2O3 coatings was the tetragonal phase. To evaluate the influence of the coating’s thickness on the thermal conductivity of thin ZrO2-4mol% Y2O3 coatings, the pulsed thermal imaging method was employed to obtain the thermal conductivity of the coating layer in the two-layer (coating and substrate) samples with thickness between 56 and 337 micrometers. The thermal conductivity of the coating layer was successfully evaluated and compared well with those obtained by the lasermore » flash method for similar coatings. The thermal conductivity of coatings shows an increasing tendency with an increase in the coating’s thickness.« less

An Investigation into the Effects of Interface Stress and Interfacial Arrangement on Temperature Dependent Thermal Properties of a Biological and a Biomimetic Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomar, Vikas

2015-01-12

A significant effort in the biomimetic materials research is on developing materials that can mimic and function in the same way as biological tissues, on bio-inspired electronic circuits, on bio-inspired flight structures, on bio-mimetic materials processing, and on structural biomimetic materials, etc. Most structural biological and biomimetic material properties are affected by two primary factors: (1) interfacial interactions between an organic and an inorganic phase usually in the form of interactions between an inorganic mineral phase and organic protein network; and (2) structural arrangement of the constituents. Examples are exoskeleton structures such as spicule, nacre, and crustacean exoskeletons. A significantmore » effort is being directed towards making synthetic biomimetic materials based on a manipulation of the above two primary factors. The proposed research is based on a hypothesis that in synthetic materials with biomimetic morphology thermal conductivity, k, (how fast heat is carried away) and thermal diffusivity, D, (how fast a material’s temperature rises: proportional to the ratio of k and heat capacity) can be engineered to be either significantly low or significantly high based on a combination of chosen interface orientation and interfacial arrangement in comparison to conventional material microstructures with the same phases and phase volume fractions. METHOD DEVELOPMENT 1. We have established a combined Raman spectroscopy and nanomechanical loading based experimental framework to perform environment (liquid vs. air vs. vacuum) dependent and temperature dependent (~1000 degree-C) in-situ thermal diffusivity measurements in biomaterials at nanoscale to micron scale along with the corresponding analytical theoretic calculations. (Zhang and Tomar, 2013) 2. We have also established a new classical molecular simulation based framework to measure thermal diffusivity in biomolecular interfaces. We are writing a publication currently (Qu and Tomar, 2013) to report the framework and findings in tropocollagen-hydroxyapatite based idealized biomaterial interfaces. PHYSICAL FINDINGS 1. Analyses using experiments have revealed that in the case of bone thermal conductivity and thermal diffusivity at micron scale shows significant dependence on compressive stress and temperature. Overall, there is a decrease with respect to increase in temperature and increase with respect to increase in compressive stress. Bio-molecular simulations on idealized tropocollagen-hydroxyapatite interfaces confirm such findings. However, simulations also reveal that thermal diffusivity and thermal conductivity can be significantly tailored by interfacial orientation. More importantly, in inorganic materials, interfaces contribute to reduce thermal conductivity and diffusivity. However, analyses here reveal that both can be increased despite presence of a lot of interfaces. 2. Based on significant role played by interfaces in affecting bone thermal properties, a crustacean-exoskeleton system is examined for thermal diffusivity using the newly developed setup. Special emphasis here is on this system since such arrangement is found to be common in fresh water shrimp as well as in some deep water organisms surviving in environment extremes. Experiments reveal that in such system thermal diffusivity is highly tailorable. 3. Overall, experiments and models have established that in biomaterial interfaces a counterintuitive role of interfaces in mediating thermal conduction as a function of stress and temperature is possible in contrast to inorganic materials where interfaces almost always lead to reduction of thermal conductivity as a function of such factors. More investigations are underway to reveal physical origins of such counter-physical characteristics. Such principles can be significantly useful in developing new and innovative bioenergy and inorganic energy systems where heat dissipation significantly affects system performance.« less

Specific interface area in a thin layer system of two immiscible liquids with vapour generation at the contact interface

NASA Astrophysics Data System (ADS)

Pimenova, Anastasiya V.; Gazdaliev, Ilias M.; Goldobin, Denis S.

2017-06-01

For well-stirred multiphase fluid systems the mean interface area per unit volume, or “specific interface area” SV, is a significant characteristic of the system state. In particular, it is important for the dynamics of systems of immiscible liquids experiencing interfacial boiling. We estimate the value of parameter SV as a function of the heat influx {\\dot{Q}}V to the system or the average system overheat <Θ> above the interfacial boiling point. The derived results can be reformulated for the case of an endothermic chemical reaction between two liquid reagents with the gaseous form of one of the reaction products. The final results are restricted to the case of thin layers, where the potential gravitational energy of bubbles leaving the contact interface is small compared to their surface tension energy.

Enhanced energy transport owing to nonlinear interface interaction

PubMed Central

Su, Ruixia; Yuan, Zongqiang; Wang, Jun; Zheng, Zhigang

2016-01-01

It is generally expected that the interface coupling leads to the suppression of thermal transport through coupled nanostructures due to the additional interface phonon-phonon scattering. However, recent experiments demonstrated that the interface van der Waals interactions can significantly enhance the thermal transfer of bonding boron nanoribbons compared to a single freestanding nanoribbon. To obtain a more in-depth understanding on the important role of the nonlinear interface coupling in the heat transports, in the present paper, we explore the effect of nonlinearity in the interface interaction on the phonon transport by studying the coupled one-dimensional (1D) Frenkel-Kontorova lattices. It is found that the thermal conductivity increases with increasing interface nonlinear intensity for weak inter-chain nonlinearity. By developing the effective phonon theory of coupled systems, we calculate the dependence of heat conductivity on interfacial nonlinearity in weak inter-chain couplings regime which is qualitatively in good agreement with the result obtained from molecular dynamics simulations. Moreover, we demonstrate that, with increasing interface nonlinear intensity, the system dimensionless nonlinearity strength is reduced, which in turn gives rise to the enhancement of thermal conductivity. Our results pave the way for manipulating the energy transport through coupled nanostructures for future emerging applications. PMID:26787363

Stability Enhancement of Silver Nanowire Networks with Conformal ZnO Coatings Deposited by Atmospheric Pressure Spatial Atomic Layer Deposition.

PubMed

Khan, Afzal; Nguyen, Viet Huong; Muñoz-Rojas, David; Aghazadehchors, Sara; Jiménez, Carmen; Nguyen, Ngoc Duy; Bellet, Daniel

2018-06-06

Silver nanowire (AgNW) networks offer excellent electrical and optical properties and have emerged as one of the most attractive alternatives to transparent conductive oxides to be used in flexible optoelectronic applications. However, AgNW networks still suffer from chemical, thermal, and electrical instabilities, which in some cases can hinder their efficient integration as transparent electrodes in devices such as solar cells, transparent heaters, touch screens, and organic light emitting diodes. We have used atmospheric pressure spatial atomic layer deposition (AP-SALD) to fabricate hybrid transparent electrode materials in which the AgNW network is protected by a conformal thin layer of zinc oxide. The choice of AP-SALD allows us to maintain the low-cost and scalable processing of AgNW-based transparent electrodes. The effects of the ZnO coating thickness on the physical properties of AgNW networks are presented. The composite electrodes show a drastic enhancement of both thermal and electrical stabilities. We found that bare AgNWs were stable only up to 300 °C when subjected to thermal ramps, whereas the ZnO coating improved the stability up to 500 °C. Similarly, ZnO-coated AgNWs exhibited an increase of 100% in electrical stability with respect to bare networks, withstanding up to 18 V. A simple physical model shows that the origin of the stability improvement is the result of hindered silver atomic diffusion thanks to the presence of the thin oxide layer and the quality of the interfaces of hybrid electrodes. The effects of ZnO coating on both the network adhesion and optical transparency are also discussed. Finally, we show that the AP-SALD ZnO-coated AgNW networks can be effectively used as very stable transparent heaters.

Nanoporous membrane device for ultra high heat flux thermal management

NASA Astrophysics Data System (ADS)

Hanks, Daniel F.; Lu, Zhengmao; Sircar, Jay; Salamon, Todd R.; Antao, Dion S.; Bagnall, Kevin R.; Barabadi, Banafsheh; Wang, Evelyn N.

2018-02-01

High power density electronics are severely limited by current thermal management solutions which are unable to dissipate the necessary heat flux while maintaining safe junction temperatures for reliable operation. We designed, fabricated, and experimentally characterized a microfluidic device for ultra-high heat flux dissipation using evaporation from a nanoporous silicon membrane. With 100 nm diameter pores, the membrane can generate high capillary pressure even with low surface tension fluids such as pentane and R245fa. The suspended ultra-thin membrane structure facilitates efficient liquid transport with minimal viscous pressure losses. We fabricated the membrane in silicon using interference lithography and reactive ion etching and then bonded it to a high permeability silicon microchannel array to create a biporous wick which achieves high capillary pressure with enhanced permeability. The back side consisted of a thin film platinum heater and resistive temperature sensors to emulate the heat dissipation in transistors and measure the temperature, respectively. We experimentally characterized the devices in pure vapor-ambient conditions in an environmental chamber. Accordingly, we demonstrated heat fluxes of 665 ± 74 W/cm2 using pentane over an area of 0.172 mm × 10 mm with a temperature rise of 28.5 ± 1.8 K from the heated substrate to ambient vapor. This heat flux, which is normalized by the evaporation area, is the highest reported to date in the pure evaporation regime, that is, without nucleate boiling. The experimental results are in good agreement with a high fidelity model which captures heat conduction in the suspended membrane structure as well as non-equilibrium and sub-continuum effects at the liquid-vapor interface. This work suggests that evaporative membrane-based approaches can be promising towards realizing an efficient, high flux thermal management strategy over large areas for high-performance electronics.

Burner liner thermal-structural load modeling

NASA Technical Reports Server (NTRS)

Maffeo, R.

1986-01-01

The software package Transfer Analysis Code to Interface Thermal/Structural Problems (TRANCITS) was developed. The TRANCITS code is used to interface temperature data between thermal and structural analytical models. The use of this transfer module allows the heat transfer analyst to select the thermal mesh density and thermal analysis code best suited to solve the thermal problem and gives the same freedoms to the stress analyst, without the efficiency penalties associated with common meshes and the accuracy penalties associated with the manual transfer of thermal data.

Parallel Fin ORU Thermal Interface for space applications. [Orbital Replaceable Unit

NASA Technical Reports Server (NTRS)

Stobb, C. A.; Limardo, Jose G.

1992-01-01

The Parallel Fin Thermal Interface has been developed as an Orbital Replaceable Unit (ORU) interface. The interface transfers heat from an ORU baseplate to a Heat Acquisition Plate (HAP) through pairs of fins sandwiched between insert plates that press against the fins with uniform pressure. The insert plates are spread apart for ORU baseplate separation and replacement. Two prototype interfaces with different fin dimensions were built (Model 140 and 380). Interfacing surface samples were found to have roughnesses of 56 to 89 nm. Conductance values of 267 to 420 W/sq m C were obtained for the 140 model in vacuum with interface pressures of 131 to 262 kPa (19 to 38 psi). Vacuum conductances ranging from 176 to 267 W/sq m F were obtained for the 380 model at interface pressures of 97 to 152 kPa (14 and 22 psi). Correlations from several sources were found to agree with test data within 20 percent using thermal math models of the interfaces.

Thermal emf generated by laser emission along thin metal films

NASA Astrophysics Data System (ADS)

Konov, V. I.; Nikitin, P. I.; Satiukov, D. G.; Uglov, S. A.

1991-07-01

Substantial pulse thermal emf values (about 1.5 V) have been detected along the substrate during the interaction of laser emission with thin metal films (Ni, Ti, and Bi) sprayed on corrugated substrates. Relationships are established between the irradiation conditions and parameters of the generated electrical signals. Possible mechanisms of thermal emf generation and promising applications are discussed.

Thermal Regulation of Heat Transfer Processes

DTIC Science & Technology

2014-10-02

determine the contrasts of thermophysical properties of composites and thin films , and various approaches to regulate heat transport processes. In the...nanofluids, 2) thermal regulation of optical properties in thin film , and 3) thermal regulation of phase transition for efficient steam generation...stress generated during the crystals growth forces CNTs to contact with each other and form a conductive percolation network. Hence the composite

Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

NASA Astrophysics Data System (ADS)

Feng, Ya; Zhu, Jie; Tang, Dawei

2014-12-01

Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs) on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

Interface characterization of Cu-Mo coating deposited on Ti-Al alloys by arc spraying

NASA Astrophysics Data System (ADS)

Bai, Shengqiang; Li, Fei; Wu, Ting; Yin, Xianglin; Shi, Xun; Chen, Lidong

2015-03-01

Cu-Mo pseudobinary alloys are promising candidates as electrode materials in CoSb3-based skutterudite thermoelectric (TE) devices for TE power generation. In this study, Cu-Mo coatings were deposited onto Ti-Al substrates by applying a dual-wire electric arc spraying coating technique. The microstructure of the surfaces, cross sections and coating interfaces were analyzed by scanning electron microscopy (SEM) and energy dispersion spectrometry (EDS). Cu-Mo coatings showed a typical banded splat with compact microstructures, and have no coarse pores nor micro-cracks. The thermal shock resistance of the Cu-Mo coating was also investigated to show good combinations with Ti-Al substrates. After 50 thermal shock cycles, there were no cracks observed at the interface. In contrast, the test of the thermal shock resistance of the Cu coating on the Ti-Al substrate was also investigated. Due to a large difference in the thermal expansion coefficients between Cu and Ti-Al alloys, the Cu coating flaked from the Ti-Al substrate completely after 10 thermal shock cycles. The contact resistivity of the Ti-Al/Cu-Mo interface was about 1.6 μΩṡcm2 and this value was unchanged after 50 thermal shock cycles, indicating the low electric resistance and high thermal stability of the Cu-Mo/Ti-Al interface.

Confined methane-water interfacial layers and thickness measurements using in situ Raman spectroscopy.

PubMed

Pinho, Bruno; Liu, Yukun; Rizkin, Benjamin; Hartman, Ryan L

2017-11-07

Gas-liquid interfaces broadly impact our planet, yet confined interfaces behave differently than unconfined ones. We report the role of tangential fluid motion in confined methane-water interfaces. The interfaces are created using microfluidics and investigated by in situ 1D, 2D and 3D Raman spectroscopy. The apparent CH 4 and H 2 O concentrations are reported for Reynolds numbers (Re), ranging from 0.17 to 8.55. Remarkably, the interfaces are comprised of distinct layers of thicknesses varying from 23 to 57 μm. We found that rarefaction, mixture, thin film, and shockwave layers together form the interfaces. The results indicate that the mixture layer thickness (δ) increases with Re (δ ∝ Re), and traditional transport theory for unconfined interfaces does not explain the confined interfaces. A comparison of our results with thin film theory of air-water interfaces (from mass transfer experiments in capillary microfluidics) supports that the hydrophobicity of CH 4 could decrease the strength of water-water interactions, resulting in larger interfacial thicknesses. Our findings help explain molecular transport in confined gas-liquid interfaces, which are common in a broad range of societal applications.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

PubMed

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Mori, Takahiro; Morita, Yukinori; Uchida, Noriyuki; Liu, Yongxun; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku; Matsukawa, Takashi

2017-04-01

We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal annealing (RTA). After RTA treatment at 720 °C, we find the heteroepitaxial Ge films to have smooth surfaces with a roughness root mean square value of 0.54 nm. Raman measurement reveals that the 720 °C RTA improves the crystallinity of Ge films while maintaining abrupt Ge/Si interfaces. Cross-sectional transmission electron microscopy confirms that the 720 °C RTA step effectively reduces stacking faults and dislocations in the Ge films. The Richardson plot of the TaN/Ge/n-Si diode indicates a Schottky barrier height (SBH) of 0.33 V, which is close to the height of 0.37 V measured from the capacitance-voltage measurement. These values are reasonable compared with the reported SBH of the TaN/bulk Ge Schottky barrier diode, indicating that the method involving heated sputtering and subsequent RTA provides adequate thin Ge films for Ge/Si heterostructures.

Formation of organized nanostructures from unstable bilayers of thin metallic liquids

NASA Astrophysics Data System (ADS)

Khenner, Mikhail; Yadavali, Sagar; Kalyanaraman, Ramki

2011-12-01

Dewetting of pulsed-laser irradiated, thin (<20 nm), optically reflective metallic bilayers on an optically transparent substrate with a reflective support layer is studied within the lubrication equations model. A steady-state bilayer film thickness (h) dependent temperature profile is derived based on the mean substrate temperature estimated from the elaborate thermal model of transient heating and melting/freezing. Large thermocapillary forces are observed along the plane of the liquid-liquid and liquid-gas interfaces due to this h-dependent temperature, which, in turn, is strongly influenced by the h-dependent laser light reflection and absorption. Consequently the dewetting is a result of the competition between thermocapillary and intermolecular forces. A linear analysis of the dewetting length scales established that the non-isothermal calculations better predict the experimental results as compared to the isothermal case within the bounding Hamaker coefficients. Subsequently, a computational non-linear dynamics study of the dewetting pathway was performed for Ag/Co and Co/Ag bilayer systems to predict the morphology evolution. We found that the systems evolve towards formation of different morphologies, including core-shell, embedded, or stacked nanostructure morphologies.

Ultrasensitive molecular detection using thermal conductance of a hydrophobic gold-water interface.

PubMed

Green, Andrew J; Alaulamie, Arwa A; Baral, Susil; Richardson, Hugh H

2013-09-11

The thermal conductance from a hydrophobic gold aqueous interface is measured with increasing solute concentration. A small amount of aqueous solute molecules (1 solute molecule in 550 water molecules) dramatically increases the heat dissipation into the surrounding liquid. This result is consistent with a thermal conductance that is limited by an interface interaction where minority aqueous components significantly alter the surface properties and heat transport through the interface. The increase in heat dissipation can be used to make an extremely sensitive molecular detector that can be scaled to give single molecule detection without amplification or utilizing fluorescence labels.

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

NASA Astrophysics Data System (ADS)

Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-02-01

Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for the high-temperature behavior. The effect of degenerate semiconductor dopant concentration on metal-semiconductor thermal interface conductance was also investigated with the result that we have found no dependencies of the thermal interface conductances up to (n or p type) ≈1 ×1019 cm-3, indicating that there is no significant direct electronic transport and no transport effects that depend on long-range metal-semiconductor band alignment.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Stress Intensity of Delamination in a Sintered-Silver Interconnection: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVoto, D. J.; Paret, P. P.; Wereszczak, A. A.

2014-08-01

In automotive power electronics packages, conventional thermal interface materials such as greases, gels, and phase-change materials pose bottlenecks to heat removal and are also associated with reliability concerns. The industry trend is toward high thermal performance bonded interfaces for large-area attachments. However, because of coefficient of thermal expansion mismatches between materials/layers and resultant thermomechanical stresses, adhesive and cohesive fractures could occur, posing a reliability problem. These defects manifest themselves in increased thermal resistance. This research aims to investigate and improve the thermal performance and reliability of sintered-silver for power electronics packaging applications. This has been experimentally accomplished by the synthesismore » of large-area bonded interfaces between metalized substrates and copper base plates that have subsequently been subjected to thermal cycles. A finite element model of crack initiation and propagation in these bonded interfaces will allow for the interpretation of degradation rates by a crack-velocity (V)-stress intensity factor (K) analysis. A description of the experiment and the modeling approach are discussed.« less

Graphene-Enhanced Thermal Interface Materials for Thermal Management of Solar Cells

NASA Astrophysics Data System (ADS)

Saadah, Mohammed Ahmed

The interest to photovoltaic solar cells as a source of energy for a variety of applications has been rapidly increasing in recent years. Solar cells panels that employ optical concentrators can convert more than 30% of absorbed light into electricity. Most of the remaining 70% of absorbed energy is turned into heat inside the solar cell. The increase in the photovoltaic cell temperature negatively affects its power conversion efficiency and lifetime. In this dissertation research I investigated a feasibility of using graphene fillers in thermal interface materials for improving thermal management of multi-junction concentrator solar cells. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Characteristics of the composites have been examined with Raman spectroscopy, optical microscopy and thermal conductivity measurements. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the single and multi-junction solar cells has been tested using an industry-standard solar simulator under the light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated and multi-junction photovoltaic solar cells.

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

NASA Astrophysics Data System (ADS)

Hua, Chengyun; Chen, Xiangwen; Ravichandran, Navaneetha K.; Minnich, Austin J.

2017-05-01

Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting applications ranging from thermoelectric waste heat recovery to heat dissipation in electronics. From the microscopic perspective, interfacial phonon transport is described by transmission coefficients that link vibrational modes in the materials composing the interface. However, direct experimental determination of these coefficients is challenging because most experiments provide a mode-averaged interface conductance that obscures the microscopic detail. Here, we report a metrology to extract thermal phonon transmission coefficients at solid interfaces using ab initio phonon transport modeling and a thermal characterization technique, time-domain thermoreflectance. In combination with transmission electron microscopy characterization of the interface, our approach allows us to link the atomic structure of an interface to the spectral content of the heat crossing it. Our work provides a useful perspective on the microscopic processes governing interfacial heat conduction.

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

DOE PAGES

Hua, Chengyun; Chen, Xiangwen; Ravichandran, Navaneetha K.; ...

2017-05-17

Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting applications ranging from thermoelectric waste heat recovery to heat dissipation in electronics. From the microscopic perspective, interfacial phonon transport is described by transmission coefficients that link vibrational modes in the materials composing the interface. But, direct experimental determination of these coefficients is challenging because most experiments provide a mode-averaged interface conductance that obscures the microscopic detail. Here, we report a metrology to extract thermal phonon transmission coefficients at solid interfaces using ab initio phonon transport modeling and a thermal characterization technique, time-domain thermoreflectance. In combination with transmission electronmore » microscopy characterization of the interface, our approach allows us to link the atomic structure of an interface to the spectral content of the heat crossing it. This work provides a useful perspective on the microscopic processes governing interfacial heat conduction.« less

Performance Testing of Thermal Interface Filler Materials in a Bolted Aluminum Interface Under Thermal/Vacuum Conditions

NASA Technical Reports Server (NTRS)

Glasgow, S. D.; Kittredge, K. B.

2003-01-01

A thermal interface material is one of the many tools often used as part of the thermal control scheme for space-based applications. Historically, at Marshall Space Flight Center, CHO-THERM 1671 has primarily been used for applications where an interface material was deemed necessary. However, numerous alternatives have come on the market in recent years. It was decided that a number of these materials should be tested against each other to see if there were better performing alternatives. The tests were done strictly to compare the thermal performance of the materials relative to each other under repeatable conditions and do not take into consideration other design issues, such as off-gassing, electrical conduction, isolation, etc. The purpose of this Technical Memorandum is to detail the materials tested, test apparatus, procedures, and results of these tests. The results show that there are a number of better performing alternatives now available.

Processing eutectics in space

NASA Technical Reports Server (NTRS)

Douglas, F. C.; Galasso, F. S.

1974-01-01

Experimental work is reported which was directed toward obtaining interface shape control while a numerical thermal analysis program was being made operational. An experimental system was developed in which the solid-liquid interface in a directionally solidified aluminum-nickel eutectic could be made either concave to the melt or convex to the melt. This experimental system provides control over the solid-liquid interface shape and can be used to study the effect of such control on the microstructure. The SINDA thermal analysis program, obtained from Marshall Space Flight Center, was used to evaluate experimental directional solidification systems for the aluminum-nickel and the aluminum-copper eutectics. This program was applied to a three-dimensional ingot, and was used to calculate the thermal profiles in axisymmetric heat flow. The results show that solid-liquid interface shape control can be attained with physically realizable thermal configurations and the magnitudes of the required thermal inputs were indicated.

Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

PubMed

Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

2016-08-19

We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

Rapid thermal annealing of CH 3 NH 3 PbI 3 perovskite thin films by intense pulsed light with aid of diiodomethane additive

DOE PAGES

Ankireddy, Krishnamraju; Ghahremani, Amir H.; Martin, Blake; ...

2018-01-01

Perovskite thin films are thermally annealed using a rapid intense pulsed light technique enabled by an alkyl halide that collectively improves device performance when processed in ambient conditions.

Interfaces and thin films as seen by bound electromagnetic waves.

PubMed

Knoll, W

1998-01-01

This contribution summarizes the use of plasmon surface polaritons and guided optical waves for the characterization of interfaces and thin organic films. After a short introduction to the theoretical background of evanescent wave optics, examples are given that show how this interfacial "light" can be employed to monitor thin coatings at a solid/air or solid/liquid interface. Examples are given for a very sensitive thickness determination of samples ranging from self-assembled monolayers, to multilayer assemblies prepared by the Langmuir/Blodgett/Kuhn technique or by the alternate polyelectrolyte deposition. These are complemented by the demonstration of the potential of the technique to also monitor time-dependent processes in a kinetic mode. Here, we put an emphasis on the combination set-up of surface plasmon optics with electrochemical techniques, allowing for the on-line characterization of various surface functionalization strategies, e.g. for (bio-) sensor purposes.

New method for measuring the laser-induced damage threshold of optical thin film

NASA Astrophysics Data System (ADS)

Su, Jun-hong; Wang, Hong; Xi, Ying-xue

2012-10-01

The laser-induced damage threshold (LIDT) of thin film means that the thin film can withstand a maximum intensity of laser radiation. The film will be damaged when the irradiation under high laser intensity is greater than the value of LIDT. In this paper, an experimental platform with measurement operator interfaces and control procedures in the VB circumstance is built according to ISO11254-1. In order to obtain more accurate results than that with manual measurement, in the software system, a hardware device can be controlled by control widget on the operator interfaces. According to the sample characteristic, critical parameters of the LIDT measurement system such as spot diameter, damage threshold region, and critical damage pixel number are set up on the man-machine conversation interface, which could realize intelligent measurements of the LIDT. According to experimental data, the LIDT is obtained by fitting damage curve automatically.

HPTAM, a two-dimensional Heat Pipe Transient Analysis Model, including the startup from a frozen state

NASA Technical Reports Server (NTRS)

Tournier, Jean-Michel; El-Genk, Mohamed S.

1995-01-01

A two-dimensional Heat Pipe Transient Analysis Model, 'HPTAM,' was developed to simulate the transient operation of fully-thawed heat pipes and the startup of heat pipes from a frozen state. The model incorporates: (a) sublimation and resolidification of working fluid; (b) melting and freezing of the working fluid in the porous wick; (c) evaporation of thawed working fluid and condensation as a thin liquid film on a frozen substrate; (d) free-molecule, transition, and continuum vapor flow regimes, using the Dusty Gas Model; (e) liquid flow and heat transfer in the porous wick; and (f) thermal and hydrodynamic couplings of phases at their respective interfaces. HPTAM predicts the radius of curvature of the liquid meniscus at the liquid-vapor interface and the radial location of the working fluid level (liquid or solid) in the wick. It also includes the transverse momentum jump condition (capillary relationship of Pascal) at the liquid-vapor interface and geometrically relates the radius of curvature of the liquid meniscus to the volume fraction of vapor in the wick. The present model predicts the capillary limit and partial liquid recess (dryout) in the evaporator wick, and incorporates a liquid pooling submodel, which simulates accumulation of the excess liquid in the vapor core at the condenser end.

Head-disk interface nanotribology for Tbit/inch2 recording densities: near-contact and contact recording

NASA Astrophysics Data System (ADS)

Vakis, Antonis I.; Polycarpou, Andreas A.

2010-06-01

In the effort to achieve Tbit/inch2 recording densities, thermal fly-height control (TFC) nanotechnology was developed to effectively reduce the clearance (which is of the order of a few nanometres) at the head-disk interface (HDI) of hard-disk drives. In this work, we present a model of the HDI that can predict the dynamic flying and nanotribological contacting behaviour, allowing for accurate predictions and characterization of the operating regime as a function of TFC actuation. A geometric model for TFC is presented and an improved definition of contact at the interface is developed in the presence of nanoscale topographical roughness and dynamic microwaviness. A new methodology is proposed for the calculation of the nominal area of contact, which affects both near- and at-contact behaviour, while the stiffening of the air bearing force with TFC actuation is also accounted for. Slider behaviour is analysed by quantifying the approach, jump-to-contact, lubricant and solid contact regimes of operation and identifying the critical and optimum TFC actuations. The feasibility of near-contact, light molecularly thin lubricant contact versus solid contact recording is explored under the effect of the interfacial forces and stresses present at the HDI. The clearance and the state of vibrations are analysed and design guidelines are proposed for improved performance.

A thermal scale modeling study for Apollo and Apollo applications, volume 1

NASA Technical Reports Server (NTRS)

Shannon, R. L.

1972-01-01

The program is reported for developing and demonstrating the capabilities of thermal scale modeling as a thermal design and verification tool for Apollo and Apollo Applications Projects. The work performed for thermal scale modeling of STB; cabin atmosphere/spacecraft cabin wall thermal interface; closed loop heat rejection radiator; and docked module/spacecraft thermal interface are discussed along with the test facility requirements for thermal scale model testing of AAP spacecraft. It is concluded that thermal scale modeling can be used as an effective thermal design and verification tool to provide data early in a spacecraft development program.

Some Aspects of Thermal Transport across the Interface between Graphene and Epoxy in Nanocomposites.

PubMed

Wang, Yu; Yang, Chunhui; Pei, Qing-Xiang; Zhang, Yingyan

2016-03-01

Owing to the superior thermal properties of graphene, graphene-reinforced polymer nanocomposites hold great potential as the thermal interface materials (TIMs) dissipating heat for electronic packages. However, this application is greatly hindered by the high thermal resistance at the interface between graphene and polymer. In this paper, some important aspects of the improvement of the thermal transport across the interface between graphene and epoxy in graphene-epoxy nanocomposites, including the effectiveness of covalent and noncovalent functionalization, isotope doping, and acetylenic linkage in graphene are systematically investigated using molecular dynamics (MD) simulations. The simulation results show that the covalent and noncovalent functionalization techniques could considerably reduce the graphene-epoxy interfacial thermal resistance in the nanocomposites. Among different covalent functional groups, butyl is more effective than carboxyl and hydroxyl in reducing the interfacial thermal resistance. Different noncovalent functional molecules, including 1-pyrenebutyl, 1-pyrenebutyric acid, and 1-pyrenebutylamine, yield a similar amount of reductions. Moreover, it is found that the graphene-epoxy interfacial thermal resistance is insensitive to the carbon isotope doping in graphene, while it can be reduced moderately by replacing the sp(2) bonds in graphene with acetylenic linkages.

Anomalous Epitaxial Growth in Thermally Sprayed YSZ and LZ Splats

NASA Astrophysics Data System (ADS)

Chen, Lin; Yang, Guan-Jun

2017-08-01

Thermally sprayed coatings are essentially layered materials, and lamellar interfaces are of great importance to coatings' performances. In the present study, to investigate the microstructures and defect features at thermally sprayed coating interfaces, homoepitaxial 8 mol.% yttria-stabilized zirconia (YSZ) and heteroepitaxial lanthanum zirconia (LZ) films were fabricated. The epitaxial interfaces were examined by high-resolution transmission electron microscope (HR-TEM) in detail. As a result, we report, for the first time, an anomalous incommensurate homoepitaxial growth with mismatch-induced dislocations in thermally sprayed YSZ splats to create a homointerface. We also find the anomalous heteroepitaxial growth in thermally sprayed LZ splats. The mechanism of the anomalous incommensurate growth was analyzed in detail. Essentially, it is a pseudo-heteroepitaxy because of the lattice mismatch between the film and the locally heated substrate, as the locally heated substrate is significantly strained by its cold surroundings. Moreover, the super-high-density dislocations were found in the interfacial region, which resulted from sufficient thermal fluctuations and extremely rapid cooling rates. Both the anomalous lattice mismatch and super-high-density dislocations lead to weak interfaces and violent cracking in thermally sprayed coatings. These were also the essential differences between the conventional and the present epitaxy by thermal spray technique.

Thin Thermal-Insulation Blankets for Very High Temperatures

NASA Technical Reports Server (NTRS)

Choi, Michael K.

2003-01-01

Thermal-insulation blankets of a proposed type would be exceptionally thin and would endure temperatures up to 2,100 C. These blankets were originally intended to protect components of the NASA Solar Probe spacecraft against radiant heating at its planned closest approach to the Sun (a distance of 4 solar radii). These blankets could also be used on Earth to provide thermal protection in special applications (especially in vacuum chambers) for which conventional thermal-insulation blankets would be too thick or would not perform adequately.

Improvement of thermal management in the composite Yb:YAG/YAG thin-disk laser

NASA Astrophysics Data System (ADS)

Kuznetsov, I. I.; Mukhin, I. B.; Palashov, O. V.

2016-04-01

To improve the thermal management in the composite Yb:YAG/YAG thin-disk laser a new design of laser head is developed. Thermal-induced phase distortions, small signal gain and lasing in the upgraded laser head are investigated and compared with previously published results. A substantial decrease of the thermal lens optical power and phase aberrations and increase of the laser slope efficiency are observed. A continuous-wave laser with 440 W average power and 44% slope efficiency is constructed.

Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

PubMed

Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

2018-05-21

In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

Understanding Interfacial Alignment in Solution Coated Conjugated Polymer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qu, Ge; Zhao, Xikang; Newbloom, Gregory M.

Domain alignment in conjugated polymer thin films can significantly enhance charge carrier mobility. However, the alignment mechanism during meniscus-guided solution coating remains unclear. Furthermore, interfacial alignment has been rarely studied despite its direct relevance and critical importance to charge transport. In this study, we uncover a significantly higher degree of alignment at the top interface of solution coated thin films, using a donor–acceptor conjugated polymer, poly(diketopyrrolopyrrole-co-thiopheneco- thieno[3,2- b]thiophene-co-thiophene) (DPP2T-TT), as the model system. At the molecular level, we observe in-plane π–π stacking anisotropy of up to 4.8 near the top interface with the polymer backbone aligned parallel to the coatingmore » direction. The bulk of the film is only weakly aligned with the backbone oriented transverse to coating. At the mesoscale, we observe a well-defined fibril-like morphology at the top interface with the fibril long axis pointing toward the coating direction. Significantly smaller fibrils with poor orientational order are found on the bottom interface, weakly aligned orthogonal to the fibrils on the top interface. The high degree of alignment at the top interface leads to a charge transport anisotropy of up to 5.4 compared to an anisotropy close to 1 on the bottom interface. We attribute the formation of distinct interfacial morphology to the skin-layer formation associated with high Peclet number, which promotes crystallization on the top interface while suppressing it in the bulk. As a result, we further infer that the interfacial fibril alignment is driven by the extensional flow on the top interface arisen from increasing solvent evaporation rate closer to the meniscus front.« less

Understanding Interfacial Alignment in Solution Coated Conjugated Polymer Thin Films

DOE PAGES

Qu, Ge; Zhao, Xikang; Newbloom, Gregory M.; ...

2017-08-01

Domain alignment in conjugated polymer thin films can significantly enhance charge carrier mobility. However, the alignment mechanism during meniscus-guided solution coating remains unclear. Furthermore, interfacial alignment has been rarely studied despite its direct relevance and critical importance to charge transport. In this study, we uncover a significantly higher degree of alignment at the top interface of solution coated thin films, using a donor–acceptor conjugated polymer, poly(diketopyrrolopyrrole-co-thiopheneco- thieno[3,2- b]thiophene-co-thiophene) (DPP2T-TT), as the model system. At the molecular level, we observe in-plane π–π stacking anisotropy of up to 4.8 near the top interface with the polymer backbone aligned parallel to the coatingmore » direction. The bulk of the film is only weakly aligned with the backbone oriented transverse to coating. At the mesoscale, we observe a well-defined fibril-like morphology at the top interface with the fibril long axis pointing toward the coating direction. Significantly smaller fibrils with poor orientational order are found on the bottom interface, weakly aligned orthogonal to the fibrils on the top interface. The high degree of alignment at the top interface leads to a charge transport anisotropy of up to 5.4 compared to an anisotropy close to 1 on the bottom interface. We attribute the formation of distinct interfacial morphology to the skin-layer formation associated with high Peclet number, which promotes crystallization on the top interface while suppressing it in the bulk. As a result, we further infer that the interfacial fibril alignment is driven by the extensional flow on the top interface arisen from increasing solvent evaporation rate closer to the meniscus front.« less

Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

2018-06-01

The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

Effects of interface morphology and TGO thickness on residual stress of EB-PVD thermal barrier coatings

NASA Astrophysics Data System (ADS)

Chen, Jianwei; Zhao, Yang; Ma, Jian

2015-04-01

The residual stress of electron beam-physical vapor deposition (EB-PVD) thermal barrier coatings (TBC) is complex and difficult to be obtained. In this paper, the interface morphology of TBCs subjected to cyclic heating and cooling was observed by SEM. Based on the thermal elastic-plastic finite method, corresponding interface model of TBCs was established. The residual stress of EB-PVD TBCs with different interface morphologies and TGO thicknesses was calculated using the FE method without regard to the presence of cracks and defects. The result shows that the distribution of residual stress is significantly affected by the interface morphology, and the growth of TGO also has influence on the residual stress of TC and TGO.

Thermoelectric Figures of Merit of Zn4Sb3 and Zrnisn-based Half-heusler Compounds Influenced by Mev Ion-beam Bombardments

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Muntele, C. I.; Ila, D.

Semiconducting β-Zn4Sb3 and ZrNiSn-based half-Heusler compound thin films with applications as thermoelectric (TE) materials were prepared using ion beam assisted deposition (IBAD). High-purity solid zinc (Zn) and antimony (Sb) were evaporated by electron beam to grow the β-Zn4Sb3 thin film while high-purity zirconium (Zr) powder and nickel (Ni) tin (Sn) powders were evaporated by electron beam to grow the ZrNiSn-based half-Heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardment for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardment. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam couldcause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ω-method (3rd harmonic) measurement system to measure the cross-plane thermal conductivity, the van der Pauw measurement system to measure the electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun

2017-04-01

We propose a model that describes the operation characteristics of a two-dimensional electron gas (2DEG) in a monolayer transition-metal dichalcogenide thin-film transistor (TFT) having trapped charges near the channel interface. We calculate the drift mobility of the carriers scattered by charged defects located in the channel or near the channel interfaces. The calculated drift mobility is a function of the 2DEG areal density of interface traps. Finally, we calculate the model transfer (ID-VG S ) and output (ID-VS D ) characteristics and verify them by comparing with the experimental results performed with monolayer MoS2 TFTs. We find the modeled results to be excellently consistent with the experiments. This proposed model can be utilized for measuring the interface-trapped charge and trap site densities from the measured transfer curves directly, avoiding more complicated and expensive measurement methods.

The stability and half-metallicity of (001) surface and (001) interface based on zinc blende MnAs

NASA Astrophysics Data System (ADS)

Han, Hongpei; Feng, Tuanhui; Zhang, Chunli; Feng, Zhibo; Li, Ming; Yao, K. L.

2018-06-01

Motivated by the growth of MnAs/GaAs thin films in many experimental researches, we investigate the electronic and magnetic properties of bulk, (001) surfaces and (001) interfaces for zinc blende MnAs by means of first-principle calculations. It is confirmed that zinc blende MnAs is a nearly half-metallic ferromagnet with 4.00 μB magnetic moment. The calculated density of states show that the half-metallicity exists in As-terminated (001) surface while it is lost in Mn-terminated (001) surface. For the (001) interfaces of MnAs with semiconductor GaAs, it is found that As-Ga and Mn-As interfaces not only have higher spin polarization but also are more stable among the four considered interfaces. Our results would be helpful to grow stable and high polarized thin films or multilayers for the practical applications of spintronic devices.

Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.

PubMed

Calka, Pauline; Sowinska, Malgorzata; Bertaud, Thomas; Walczyk, Damian; Dabrowski, Jarek; Zaumseil, Peter; Walczyk, Christian; Gloskovskii, Andrei; Cartoixà, Xavier; Suñé, Jordi; Schroeder, Thomas

2014-04-09

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

Testing of felt-ceramic materials for combustor applications

NASA Technical Reports Server (NTRS)

Venkat, R. S.; Roffe, G.

1983-01-01

The feasibility of using composite felt ceramic materials as combustor liners was experimentally studied. The material consists of a porous felt pad sandwiched between a layer of ceramic and one of solid metal. Flat, rectangular test panels, which encompassed several design variations of the basic composite material, were tested, two at a time, in a premixed gas turbine combustor as sections of the combustor wall. Tests were conducted at combustor inlet conditions of 0.5 MPa and 533 K with a reference velocity of 25 m/s. The panels were subjected to a hot gas temperature of 2170 K with 1% of the total airflow used to film cool the ceramic surface of the test panel. In general, thin ceramic layers yield low ceramic stress levels with high felt ceramic interface temperatures. On the other hand, thick ceramic layers result in low felt ceramic interface temperatures but high ceramic stress levels. Extensive thermal cycling appears to cause material degradation, but for a limited number of cycles, the survivability of felt ceramic materials, even under extremely severe combustor operating conditions, was conclusively demonstrated.

Metal-superconductor transition in low-dimensional superconducting clusters embedded in two-dimensional electron systems

NASA Astrophysics Data System (ADS)

Bucheli, D.; Caprara, S.; Castellani, C.; Grilli, M.

2013-02-01

Motivated by recent experimental data on thin film superconductors and oxide interfaces, we propose a random-resistor network apt to describe the occurrence of a metal-superconductor transition in a two-dimensional electron system with disorder on the mesoscopic scale. We consider low-dimensional (e.g. filamentary) structures of a superconducting cluster embedded in the two-dimensional network and we explore the separate effects and the interplay of the superconducting structure and of the statistical distribution of local critical temperatures. The thermal evolution of the resistivity is determined by a numerical calculation of the random-resistor network and, for comparison, a mean-field approach called effective medium theory (EMT). Our calculations reveal the relevance of the distribution of critical temperatures for clusters with low connectivity. In addition, we show that the presence of spatial correlations requires a modification of standard EMT to give qualitative agreement with the numerical results. Applying the present approach to an LaTiO3/SrTiO3 oxide interface, we find that the measured resistivity curves are compatible with a network of spatially dense but loosely connected superconducting islands.

An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

1991-01-01

Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

NASA Astrophysics Data System (ADS)

Karpov, S. Y.; Zakheim, D. A.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Brunkov, P. N.; Lundina, E. Y.; Tsatsulnikov, A. F.

2018-02-01

In situ growth of an ultra-thin (up to 2.5 nm) Si3N4 film on the top of n-GaN is shown to reduce remarkably the height of the barrier formed by deposition of Ni-based Schottky contact. The reduction is interpreted in terms of polarization dipole induced at the Si3N4/n-GaN interface and Fermi level pinning at the Ni/Si3N4 interface. Detailed study of temperature-dependent current-voltage characteristics enables identification of the electron transport mechanism in such Schottky diodes under forward bias: thermal/field electron emission over the barrier formed in n-GaN followed by tunneling through the Si3N4 film. At reverse bias and room temperature, the charge transfer is likely controlled by Poole-Frenkel ionization of deep traps in n-GaN. Tunneling exponents at forward and reverse biases and the height of the Ni/Si3N4 Schottky barrier are evaluated experimentally and compared with theoretical predictions.

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gálvez, S.; Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubio, E. J.; Mates, T. E.; Manandhar, S.

Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films alsomore » crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.« less

Boundary layers at a dynamic interface: Air-sea exchange of heat and mass

NASA Astrophysics Data System (ADS)

Szeri, Andrew J.

2017-04-01

Exchange of mass or heat across a turbulent liquid-gas interface is a problem of critical interest, especially in air-sea transfer of natural and anthropogenic gases involved in the study of climate. The goal in this research area is to determine the gas flux from air to sea or vice versa. For sparingly soluble nonreactive gases, this is controlled by liquid phase turbulent velocity fluctuations that act on the thin species concentration boundary layer on the liquid side of the interface. If the fluctuations in surface-normal velocity w' and gas concentration c' are known, then it is possible to determine the turbulent contribution to the gas flux. However, there is no suitable fundamental direct approach in the general case where neither w' nor c' can be easily measured. A new approach is presented to deduce key aspects about the near-surface turbulent motions from measurements that can be taken by an infrared (IR) camera. An equation is derived with inputs being the surface temperature and heat flux, and a solution method developed for the surface-normal strain experienced over time by boundary layers at the interface. Because the thermal and concentration boundary layers experience the same near-surface fluid motions, the solution for the surface-normal strain determines the gas flux or gas transfer velocity. Examples illustrate the approach in the cases of complete surface renewal, partial surface renewal, and insolation. The prospects for use of the approach in flows characterized by sheared interfaces or rapid boundary layer straining are explored.

Probing the liquid crystal alignment interface and switching dynamics in a slab waveguide architecture

NASA Astrophysics Data System (ADS)

Gotjen, Henry G.; Kolacz, Jakub; Myers, Jason D.; Frantz, Jesse A.; Bekele, Robel Y.; Naciri, Jawad; Spillmann, Christopher M.

2018-02-01

A non-mechanical refractive laser beam steering device has been developed to provide continuous, two-dimensional steering of infrared beams. The technology implements a dielectric slab waveguide architecture with a liquid crystal (LC) cladding. With voltage control, the birefringence of the LC can be leveraged to tune the effective index of the waveguide under an electrode. With a clever prism electrode design a beam coupled into the waveguide can be deflected continuously in two dimensions as it is coupled out into free space. The optical interaction with LC in this beamsteerer is unique from typical LC applications: only the thin layer of LC (100s of nm) near the alignment interface interacts with the beam's evanescent field. Whereas most LC interactions take place over short path lengths (microns) in the bulk of the material, here we can interrogate the behavior of LC near the alignment interface over long path lengths (centimeters). In this work the beamsteerer is leveraged as a tool to study the behavior of LC near the alignment layer in contrast to the bulk material. We find that scattering is substantially decreased near the alignment interface due to the influence of the surface anchoring energy to suppress thermal fluctuations. By tracking the position of the deflected beam with a high speed camera, we measure response times of the LC near the interface in off-to-on switching ( ms) and on-to-off switching ( 100ms). Combined, this work will provide a path for improved alignment techniques, greater optical throughput, and faster response times in this unique approach to non-mechanical beamsteering.

Thermal characterization of TiCxOy thin films

NASA Astrophysics Data System (ADS)

Fernandes, A. C.; Vaz, F.; Gören, A.; Junge, K. H.; Gibkes, J.; Bein, B. K.; Macedo, F.

2008-01-01

Thermal wave characterization of thin films used in industrial applications can be a useful tool, not just to get information on the films' thermal properties, but to get information on structural-physical parameters, e.g. crystalline structure and surface roughness, and on the film deposition conditions, since the thermal film properties are directly related to the structural-physical parameters and to the deposition conditions. Different sets of TiCXOY thin films, deposited by reactive magnetron sputtering on steel, have been prepared, changing only one deposition parameter at a time. Here, the effect of the oxygen flow on the thermal film properties is studied. The thermal waves have been measured by modulated IR radiometry, and the phase lag data have been interpreted using an Extremum method by which the thermal coating parameters are directly related to the values and modulation frequencies of the relative extrema of the inverse calibrated thermal wave phases. Structural/morphological characterization has been done using X-ray diffraction (XRD) and atomic force microscopy (AFM). The characterization of the films also includes thickness, hardness, and electric resistivity measurements. The results obtained so far indicate strong correlations between the thermal diffusivity and conductivity, on the one hand, and the oxygen flow on the other hand.

Deposition and thermal characterization of nano-structured aluminum nitride thin film on Cu-W substrate for high power light emitting diode package.

PubMed

Cho, Hyun Min; Kim, Min-Sun

2014-08-01

In this study, we developed AlN thick film on metal substrate for hybrid type LED package such as chip on board (COB) using metal printed circuit board (PCB). Conventional metal PCB uses ceramic-polymer composite as electrical insulating layer. Thermal conductivities of such type dielectric film are typically in the range of 1~4 W/m · K depending on the ceramic filler. Also, Al or Cu alloy are mainly used for metal base for high thermal conduction to dissipate heat from thermal source mounted on metal PCB. Here we used Cu-W alloy with low thermal expansion coefficient as metal substrate to reduce thermal stress between insulating layer and base metal. AlN with polyimide (PI) powder were used as starting materials for deposition. We could obtain very high thermal conductivity of 28.3 W/m · K from deposited AlN-PI thin film by AlN-3 wt% PI powder. We made hybrid type high power LED package using AlN-PI thin film. We tested thermal performance of this film by thermal transient measurement and compared with conventional metal PCB substrate.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

NASA Astrophysics Data System (ADS)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Temperature distributions measurement of high intensity focused ultrasound using a thin-film thermocouple array and estimation of thermal error caused by viscous heating.

PubMed

Matsuki, Kosuke; Narumi, Ryuta; Azuma, Takashi; Yoshinaka, Kiyoshi; Sasaki, Akira; Okita, Kohei; Takagi, Shu; Matsumoto, Yoichiro

2013-01-01

To improve the throughput of high intensity focused ultrasound (HIFU) treatment, we have considered a focus switching method at two points. For this method, it is necessary to evaluate the thermal distribution under exposure to ultrasound. The thermal distribution was measured using a prototype thin-film thermocouple array, which has the advantage of minimizing the influence of the thermocouple on the acoustic and temperature fields. Focus switching was employed to enlarge the area of temperature increase and evaluate the proposed evaluation parameters with respect to safety and uniformity. The results indicate that focus switching can effectively expand the thermal lesion while maintaining a steep thermal boundary. In addition, the influence caused by the thin-film thermocouple array was estimated experimentally. This thermocouple was demonstrated to be an effective tool for the measurement of temperature distributions induced by HIFU.

Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chander, Subhash, E-mail: sckhurdra@gmail.com; Purohit, A.; Lal, C.

2016-05-06

In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays anmore » important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.« less

Surface instability of an imperfectly bonded thin elastic film under surface van der Waals forces

NASA Astrophysics Data System (ADS)

Wang, Xu; Jing, Rong

2017-02-01

This paper studies surface instability of a thin elastic film imperfectly bonded to a rigid substrate interacting with a rigid contactor through van der Waals forces under plane strain conditions. The film-substrate interface is modeled as a linear spring with vanishing thickness described in terms of the normal and tangential interface parameters. Depending on the ratio of the two imperfect interface parameters, the critical value of the Poisson's ratio for the occurrence of surface wrinkling in the absence of surface energy can be greater than, equal to, or smaller than 0.25, which is the critical Poisson's ratio for a perfect film-substrate interface. The critical surface energy for the inhibition of the surface wrinkling is also obtained. Finally, we propose a very simple and effective method to study the surface instability of a multilayered elastic film with imperfect interfaces interacting with a rigid contactor or with another multilayered elastic film (or a multilayered simply supported plate) with imperfect interfaces.

Ultra-fast movies of thin-film laser ablation

NASA Astrophysics Data System (ADS)

Domke, Matthias; Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2012-11-01

Ultra-short-pulse laser irradiation of thin molybdenum films from the glass substrate side initiates an intact Mo disk lift off free from thermal effects. For the investigation of the underlying physical effects, ultra-fast pump-probe microscopy is used to produce stop-motion movies of the single-pulse ablation process, initiated by a 660-fs laser pulse. The ultra-fast dynamics in the femtosecond and picosecond ranges are captured by stroboscopic illumination of the sample with an optically delayed probe pulse of 510-fs duration. The nanosecond and microsecond delay ranges of the probe pulse are covered by an electronically triggered 600-ps laser. Thus, the setup enables an observation of general laser ablation processes from the femtosecond delay range up to the final state. A comparison of time- and space-resolved observations of film and glass substrate side irradiation of a 470-nm molybdenum layer reveals the driving mechanisms of the Mo disk lift off initiated by glass-side irradiation. Observations suggest that a phase explosion generates a liquid-gas mixture in the molybdenum/glass interface about 10 ps after the impact of the pump laser pulse. Then, a shock wave and gas expansion cause the molybdenum layer to bulge, while the enclosed liquid-gas mixture cools and condenses at delay times in the 100-ps range. The bulging continues for approximately 20 ns, when an intact Mo disk shears and lifts off at a velocity of above 70 m/s. As a result, the remaining hole is free from thermal effects.

Investigation of the poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]/indium tin oxide interface using photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Lägel, B.; Beerbom, M. M.; Doran, B. V.; Lägel, M.; Cascio, A.; Schlaf, R.

2005-07-01

The interface between the luminescent polymer poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and sputter-cleaned indium tin oxide (ITO) was investigated using photoemission spectroscopy in combination with in situ thin film deposition. MEH-PPV was deposited in high vacuum directly from toluene solution on the ITO substrate using a home-built electrospray thin-film deposition system. The deposition was carried out in multiple steps without breaking the vacuum. In between deposition steps the sample was characterized with x-ray and ultraviolet photoemission spectroscopy. The evaluation of the spectra sequence allowed the determination of the orbital lineup (charge injection barriers) at the interface, as well as the MEH-PPV growth mode at the interface.

Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh

2015-05-15

Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

Apparatus and method for transient thermal infrared emission spectrometry

DOEpatents

McClelland, John F.; Jones, Roger W.

1991-12-24

A method and apparatus for enabling analysis of a solid material (16, 42) by applying energy from an energy source (20, 70) top a surface region of the solid material sufficient to cause transient heating in a thin surface layer portion of the solid material (16, 42) so as to enable transient thermal emission of infrared radiation from the thin surface layer portion, and by detecting with a spectrometer/detector (28, 58) substantially only the transient thermal emission of infrared radiation from the thin surface layer portion of the solid material. The detected transient thermal emission of infrared radiation is sufficiently free of self-absorption by the solid material of emitted infrared radiation, so as to be indicative of characteristics relating to molecular composition of the solid material.

Fundamentals of lateral and vertical heterojunctions of atomically thin materials.

PubMed

Pant, Anupum; Mutlu, Zafer; Wickramaratne, Darshana; Cai, Hui; Lake, Roger K; Ozkan, Cengiz; Tongay, Sefaattin

2016-02-21

At the turn of this century, Herbert Kroemer, the 2000 Nobel Prize winner in Physics, famously commented that "the interface is the device". This statement has since opened up unparalleled opportunities at the interface of conventional three-dimensional (3D) materials (H. Kroemer, Quasi-Electric and Quasi-Magnetic Fields in Non-Uniform Semiconductors, RCA Rev., 1957, 18, 332-342). More than a decade later, Sir Andre Geim and Irina Grigorieva presented their views on 2D heterojunctions which further cultivated broad interests in the 2D materials field. Currently, advances in two-dimensional (2D) materials enable us to deposit layered materials that are only one or few unit-cells in thickness to construct sharp in-plane and out-of-plane interfaces between dissimilar materials, and to be able to fabricate novel devices using these cutting-edge techniques. The interface alone, which traditionally dominated overall device performance, thus has now become the device itself. Fueled by recent progress in atomically thin materials, we are now at the ultimate limit of interface physics, which brings to us new and exciting opportunities, with equally demanding challenges. This paper endeavors to provide stalwarts and newcomers a perspective on recent advances in synthesis, fundamentals, applications, and future prospects of a large variety of heterojunctions of atomically thin materials.

Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Kurita, Kensuke; Hagino, Harutoshi

2015-08-14

A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N{sub 2} atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H{sub 2} (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We proposemore » that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K{sup 2}) that of the thin films treated with EB irradiation alone.« less

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors

PubMed Central

2017-01-01

The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest. PMID:28745040

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

PubMed

Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

2017-08-16

The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

Growth Behavior of Intermetallic Compounds at SnAgCu/Ni and Cu Interfaces

NASA Astrophysics Data System (ADS)

Qi, Lihua; Huang, Jihua; Zhang, Hua; Zhao, Xingke; Wang, Haitao; Cheng, Donghai

2010-02-01

The growth behavior of reaction-formed intermetallic compounds (IMCs) at Sn3.5Ag0.5Cu/Ni and Cu interfaces under thermal-shear cycling conditions was investigated. The results show that the morphology of (Cu x Ni1- x )6Sn5 and Cu6Sn5 IMCs formed both at Sn3.5Ag0.5Cu/Ni and Cu interfaces gradually changed from scallop-like to chunk-like, and different IMC thicknesses developed with increasing thermal-shear cycling time. Furthermore, Cu6Sn5 IMC growth rate at the Sn3.5Ag0.5Cu/Cu interface was higher than that of (Cu x Ni1- x )6Sn5 IMC under thermal-shear cycling. Compared to isothermal aging, thermal-shear cycling led to only one Cu6Sn5 layer at the interface between SnAgCu solder and Cu substrate after 720 cycles. Moreover, Ag3Sn IMC was dispersed uniformly in the solder after reflow. The planar Ag3Sn formed near the interface changed remarkably and merged together to large platelets with increasing cycles. The mechanism of formation of Cu6Sn5, (Cu x Ni1- x )6Sn5 and Ag3Sn IMCs during thermal-shear cycling process was investigated.

Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr 1- xTi xO 3) thin films across the compositional phase diagram

DOE PAGES

Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher; ...

2017-05-23

This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less

Calibration of a thin metal foil for infrared imaging video bolometer to estimate the spatial variation of thermal diffusivity using a photo-thermal technique.

PubMed

Pandya, Shwetang N; Peterson, Byron J; Sano, Ryuichi; Mukai, Kiyofumi; Drapiko, Evgeny A; Alekseyev, Andrey G; Akiyama, Tsuyoshi; Itomi, Muneji; Watanabe, Takashi

2014-05-01

A thin metal foil is used as a broad band radiation absorber for the InfraRed imaging Video Bolometer (IRVB), which is a vital diagnostic for studying three-dimensional radiation structures from high temperature plasmas in the Large Helical Device. The two-dimensional (2D) heat diffusion equation of the foil needs to be solved numerically to estimate the radiation falling on the foil through a pinhole geometry. The thermal, physical, and optical properties of the metal foil are among the inputs to the code besides the spatiotemporal variation of temperature, for reliable estimation of the exhaust power from the plasma illuminating the foil. The foil being very thin and of considerable size, non-uniformities in these properties need to be determined by suitable calibration procedures. The graphite spray used for increasing the surface emissivity also contributes to a change in the thermal properties. This paper discusses the application of the thermographic technique for determining the spatial variation of the effective in-plane thermal diffusivity of the thin metal foil and graphite composite. The paper also discusses the advantages of this technique in the light of limitations and drawbacks presented by other calibration techniques being practiced currently. The technique is initially applied to a material of known thickness and thermal properties for validation and finally to thin foils of gold and platinum both with two different thicknesses. It is observed that the effect of the graphite layer on the estimation of the thermal diffusivity becomes more pronounced for thinner foils and the measured values are approximately 2.5-3 times lower than the literature values. It is also observed that the percentage reduction in thermal diffusivity due to the coating is lower for high thermal diffusivity materials such as gold. This fact may also explain, albeit partially, the higher sensitivity of the platinum foil as compared to gold.

Calibration of a thin metal foil for infrared imaging video bolometer to estimate the spatial variation of thermal diffusivity using a photo-thermal technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandya, Shwetang N., E-mail: pandya.shwetang@LHD.nifs.ac.jp; Sano, Ryuichi; Peterson, Byron J.

A thin metal foil is used as a broad band radiation absorber for the InfraRed imaging Video Bolometer (IRVB), which is a vital diagnostic for studying three-dimensional radiation structures from high temperature plasmas in the Large Helical Device. The two-dimensional (2D) heat diffusion equation of the foil needs to be solved numerically to estimate the radiation falling on the foil through a pinhole geometry. The thermal, physical, and optical properties of the metal foil are among the inputs to the code besides the spatiotemporal variation of temperature, for reliable estimation of the exhaust power from the plasma illuminating the foil.more » The foil being very thin and of considerable size, non-uniformities in these properties need to be determined by suitable calibration procedures. The graphite spray used for increasing the surface emissivity also contributes to a change in the thermal properties. This paper discusses the application of the thermographic technique for determining the spatial variation of the effective in-plane thermal diffusivity of the thin metal foil and graphite composite. The paper also discusses the advantages of this technique in the light of limitations and drawbacks presented by other calibration techniques being practiced currently. The technique is initially applied to a material of known thickness and thermal properties for validation and finally to thin foils of gold and platinum both with two different thicknesses. It is observed that the effect of the graphite layer on the estimation of the thermal diffusivity becomes more pronounced for thinner foils and the measured values are approximately 2.5–3 times lower than the literature values. It is also observed that the percentage reduction in thermal diffusivity due to the coating is lower for high thermal diffusivity materials such as gold. This fact may also explain, albeit partially, the higher sensitivity of the platinum foil as compared to gold.« less

Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr 1- xTi xO 3) thin films across the compositional phase diagram

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher

This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less

Liquid-Phase Processing of Barium Titanate Thin Films

NASA Astrophysics Data System (ADS)

Harris, David Thomas

Processing of thin films introduces strict limits on the thermal budget due to substrate stability and thermal expansion mismatch stresses. Barium titanate serves as a model system for the difficulty in producing high quality thin films because of sensitivity to stress, scale, and crystal quality. Thermal budget restriction leads to reduced crystal quality, density, and grain growth, depressing ferroelectric and nonlinear dielectric properties. Processing of barium titanate is typically performed at temperatures hundreds of degrees above compatibility with metalized substrates. In particular integration with silicon and other low thermal expansion substrates is desirable for reductions in costs and wider availability of technologies. In bulk metal and ceramic systems, sintering behavior has been encouraged by the addition of a liquid forming second phase, improving kinetics and promoting densification and grain growth at lower temperatures. This approach is also widespread in the multilayer ceramic capacitor industry. However only limited exploration of flux processing with refractory thin films has been performed despite offering improved dielectric properties for barium titanate films at lower temperatures. This dissertation explores physical vapor deposition of barium titanate thin films with addition of liquid forming fluxes. Flux systems studied include BaO-B2O3, Bi2O3-BaB2O 4, BaO-V2O5, CuO-BaO-B2O3, and BaO-B2O3 modified by Al, Si, V, and Li. Additions of BaO-B2O3 leads to densification and an increase in average grain size from 50 nm to over 300 nm after annealing at 900 °C. The ability to tune permittivity of the material improved from 20% to 70%. Development of high quality films enables engineering of ferroelectric phase stability using residual thermal expansion mismatch in polycrystalline films. The observed shifts to TC match thermodynamic calculations, expected strain from the thermal expansion coefficients, as well as x-ray diffract measurements . Our system exhibits flux-film-substrate interactions that can lead to dramatic changes to the microstructure. This effect is especially pronounced onc -sapphire, with Al diffusion from the substrate leading to formation of an epitaxial BaAl2O4 second phase at the substrate-film interface. The formation of this second phase in the presence of a liquid phase seeds {111} twins that drive abnormal grain growth. The orientation of the sapphire substrate determines the BaAl2O 4 morphology, enabling control the abnormal grain growth behavior. CuO additions leads to significant grain growth at 900 °C, with average grain size approaching 500 nm. The orthorhombic-tetragonal phase transition is clearly observable in temperature dependent measurements and both linear and nonlinear dielectric properties are improved. All films containing CuO are susceptible to aging. A number of other systems were investigated for efficacy at temperatures below 900 °C. Pulsed laser deposition was used to study flux + BaTiO 3 targets, layered flux films, and in situ liquids. RF-magnetron sputtering using a dual-gun approach was used to explore integration on flexible foils with Ba1-xSrxTiO3. Many of these systems were based on the BaO-B2O3 system, which has proven effective in thin films, multilayer ceramic capacitors, and bulk ceramics. Modifiers allow tailoring of the microstructure at 900 °C, however no compositions were found, and no reports exist in the open literature, that provide significant grain growth or densification below 900 °C. Liquid phase fluxes offer a promising path forward for low temperature processing of barium titanate, with the ultimate goal of integration with metalized silicon substrates. This work demonstrates significant improvements to dielectric properties and the necessity of understanding interactions in the film-flux-substrate system.

Buckling of graded coatings: A continuum model

NASA Astrophysics Data System (ADS)

Chiu, Tz-Cheng

2000-12-01

Requirements for the protection of hot section components in many high temperature applications such as earth-to-orbit winged planes and advanced turbine systems have led to the application of thermal barrier coatings (TBCs) that utilize ceramic coatings on metal substrates. An alternative concept to homogeneous ceramic coatings is the functionally graded materials (FGM) in which the composition of the coating is intentionally graded to improve the bonding strength and to reduce the magnitude of the residual and thermal stresses. A widely observed failure mode in such layered systems is known to be interface cracking that leads to spallation fracture. In most cases, the final stage of the failure process for a thin coating appears to be due to buckling instability under thermally or mechanically induced compressive stress. The objective of this study is to develop a solution to the buckling instability problem by using continuum elasticity rather than a structural mechanics approach. The emphasis in the solution will be on the investigation of the effect of material inhomogeneity in graded coatings on the instability load, the postbuckling behavior, and fracture mechanics parameters such as the stress intensity factors and strain energy release rate. In this analysis, a nonlinear continuum theory is employed to examine the interface crack problem. The analytical solution of the instability problem permits the study of the effect of material inhomogeneity upon the inception of buckling and establishes benchmark results for the numerical solutions of related problems. To study the postbuckling behavior and to calculate the stress intensity factors and strain energy release rate a geometrically nonlinear finite element procedure with enriched crack-tip element is developed. Both plane strain and axisymmetric interface crack problems in TBCs with either homogeneous or graded coating are then considered by using the finite element procedure. It is assumed that the applied load is a uniform temperature drop. Comparison of the results with that obtained from the plate approximation shows that because of the higher constraints the plate theory predicts greater instability strains and lower strain energy release rates. It is also observed that compared with a homogeneous coating the graded coating gives lower strain energy release rate because of the lower thermal residual stress and higher bending stiffness. (Abstract shortened by UMI.)

Tuning contact transport mechanisms in bilayer MoSe2 transistors up to Fowler-Nordheim regime

NASA Astrophysics Data System (ADS)

Mouafo, L. D. N.; Godel, F.; Froehlicher, G.; Berciaud, S.; Doudin, B.; Venkata Kamalakar, M.; Dayen, J.-F.

2017-03-01

Atomically thin molybdenum diselenide (MoSe2) is an emerging two-dimensional (2D) semiconductor with significant potential for electronic, optoelectronic, spintronic applications and a common platform for their possible integration. Tuning interface charge transport between such new 2D materials and metallic electrodes is a key issue in 2D device physics and engineering. Here, we report tunable interface charge transport in bilayer MoSe2 field effect transistors with Ti/Au contacts showing high on/off ratio up to 107 at room temperature. Our experiments reveal a detailed map of transport mechanisms obtained by controlling the interface band bending profile via temperature, gate and source-drain bias voltages. This comprehensive investigation leads to demarcating regimes and tuning in transport mechanisms while controlling the interface barrier profile. The careful analysis allows us to identify thermally activated regime at low carrier density, and Schottky barrier driven mechanisms at higher carrier density demonstrating the transition from low-field direct tunneling/ thermionic emission to high-field Fowler-Nordheim tunneling. Furthermore, we show that the transition voltage Vtrans to Fowler-Nordheim correlates directly to the difference between the chemical potential of the metal electrode and the conduction band minimum in the 2D semiconductor, which opens up opportunities for new theoretical and experimental investigations. Our approach being generic can be extended to other 2D materials, and the possibility of tuning contact transport regimes is promising for designing MoSe2 device applications.

Thermal annealing induced the tunable optical properties of silver thin films with linear variable thickness

NASA Astrophysics Data System (ADS)

Hong, Ruijin; Shao, Wen; Ji, Jialin; Tao, Chunxian; Zhang, Dawei

2018-06-01

Silver thin films with linear variable thickness were deposited at room temperature. The corresponding tunability of optical properties and Raman scattering intensity were realized by thermal annealing process. With the thickness increasing, the topography of as-annealed silver thin films was observed to develop from discontinued nanospheres into continuous structure with a redshift of the surface plasmon resonance wavelength in visible region. Both the various nanosphere sizes and states of aggregation of as-annealed silver thin films contributed to significantly increasing the sensitivity of surface enhanced Raman scattering (SERS).

Thin film absorption characterization by focus error thermal lensing

NASA Astrophysics Data System (ADS)

Domené, Esteban A.; Schiltz, Drew; Patel, Dinesh; Day, Travis; Jankowska, E.; Martínez, Oscar E.; Rocca, Jorge J.; Menoni, Carmen S.

2017-12-01

A simple, highly sensitive technique for measuring absorbed power in thin film dielectrics based on thermal lensing is demonstrated. Absorption of an amplitude modulated or pulsed incident pump beam by a thin film acts as a heat source that induces thermal lensing in the substrate. A second continuous wave collimated probe beam defocuses after passing through the sample. Determination of absorption is achieved by quantifying the change of the probe beam profile at the focal plane using a four-quadrant detector and cylindrical lenses to generate a focus error signal. This signal is inherently insensitive to deflection, which removes noise contribution from point beam stability. A linear dependence of the focus error signal on the absorbed power is shown for a dynamic range of over 105. This technique was used to measure absorption loss in dielectric thin films deposited on fused silica substrates. In pulsed configuration, a single shot sensitivity of about 20 ppm is demonstrated, providing a unique technique for the characterization of moving targets as found in thin film growth instrumentation.

Thermal transport study across interface “nanostructured solid surface / fluid” by photoacoustic technique

NASA Astrophysics Data System (ADS)

Voitenko, K.; Isaiev, M.; Pastushenko, A.; Andrusenko, D.; Kuzmich, A.; Lysenko, V.; Burbelo, R.

2017-01-01

In the paper the experimental study of heat transport across the interface “porous silicon/liquid” by photoacoustic technique is reported. Two cases with and without liquid covering of porous silicon surface were considered. Thermal perturbations were excited at the surface of porous silicon as a result of absorption of the light with modulated intensity. The resulting thermal-elastic stresses arising in the system were registered with piezoelectric transducer. The amplitude-frequency dependencies of the voltage on the piezoelectric electrodes were measured. The presence of the liquid film leads to decreasing of the amplitude of photoacoustic signal as a result of the thermal energy evacuation from the porous silicon into the liquid. The experimental dependencies were fitted with the results of simulation that takes into account heat fluxes separation at the porous silicon/liquid interface. With the presented method one can precisely measure heat fluxes transferred from the solid into contacting fluid. Moreover, the presented approach can be easily adopted for the thermal conductivity study of the different nanofluids as well as thermal resistance at the interface nanostructured solid/fluid.

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Effect of doping on all TMC vertical heterointerfaces

NASA Astrophysics Data System (ADS)

Nair, Salil; Joy, Jolly; Patel, K. D.; Pataniya, Pratik; Solanki, G. K.; Pathak, V. M.; Sumesh, C. K.

2018-05-01

The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kÅ thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung's method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.

Optofluidic lens actuated by laser-induced solutocapillary forces

NASA Astrophysics Data System (ADS)

Malyuk, A. Yu.; Ivanova, N. A.

2017-06-01

We demonstrate an adaptive liquid lens controlled by laser-induced solutocapillary forces. The liquid droplet serving as a lens is formed in a thin layer of binary liquid mixture by surface tension driven flows caused by the thermal action of laser irradiation. The shape of droplet, its aperture and the focal length are reversibly changed without hysteresis by varying the intensity of the laser beam. The focal length variation range of the droplet-lens lies in between infinity (a flat layer) to 15 mm (a curved interface). The droplet-lens is capable to adjust the in-plane lateral position in response to a displacement of the laser beam. The proposed laser controlled droplet-lens will enable to develop smart liquid optical devices, which can imitate the accommodation reflex and pupillary light reflex of the eye.

Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M.

2006-11-28

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Influence of interfaces density and thermal processes on mechanical stress of PECVD silicon nitride

NASA Astrophysics Data System (ADS)

Picciotto, A.; Bagolini, A.; Bellutti, P.; Boscardin, M.

2009-10-01

The paper focuses on a particular silicon nitride thin film (SiN x) produced by plasma enahanced chemical vapor deposition (PECVD) technique with high deposition rate (26 nm/min) and low values of mechanical stress (<100 MPa). This was perfomed with mixed frequency procedure varying the modulation of high frequency at 13.56 MHz and low frequency at 308 kHz of RF power supply during the deposition, without changing the ratio of reaction gases. Low stress silicon nitride is commonly obtained by tailoring the thickness ratio of high frequency vs. low frequency silicon nitride layers. The attention of this work was directed to the influence of the number of interfaces per thickness unit on the stress characteristics of the deposited material. Two sets of wafer samples were deposited with low stress silicon nitride, with a thickness of 260 nm and 2 μm, respectively. Thermal annealing processes at 380 and 520 °C in a inert enviroment were also performed on the wafers. The Stoney-Hoffman model was used to estimate the stress values by wafer curvature measurement with a mechanical surface profilometer: the stress was calculated for the as-deposited layer, and after each annealing process. The thickness and the refractive index of the SiN x were also measured and charaterized by variable angle spectra elliposometry (VASE) techinique. The experimental measurements were performed at the MT-LAB, IRST (Istituto per la Ricerca Scientifica e Tecnologica) of Bruno Kessler Foundation for Research in Trento.

Process optimization for diffusion bonding of tungsten with EUROFER97 using a vanadium interlayer

NASA Astrophysics Data System (ADS)

Basuki, Widodo Widjaja; Aktaa, Jarir

2015-04-01

Solid-state diffusion bonding is a selected joining technology to bond divertor components consisting of tungsten and EUROFER97 for application in fusion power plants. Due to the large mismatch in their coefficient of thermal expansions, which leads to serious thermally induced residual stresses after bonding, a thin vanadium plate is introduced as an interlayer. However, the diffusion of carbon originated from EUROFER97 in the vanadium interlayer during the bonding process can form a vanadium carbide layer, which has detrimental influences on the mechanical properties of the joint. For optimal bonding results, the thickness of this layer and the residual stresses has to be decreased sufficiently without a significant reduction of material transport especially at the vanadium/tungsten interface, which can be achieved by varying the diffusion bonding temperature and duration. The investigation results show that at a sufficiently low bonding temperature of 700 °C and a bonding duration of 4 h, the joint reaches a reasonable high ductility and toughness especially at elevated test temperature of 550 °C with elongation to fracture of 20% and mean absorbed Charpy impact energy of 2 J (using miniaturized Charpy impact specimens). The strength of the bonded materials is about 332 MPa at RT and 291 MPa at 550 °C. Furthermore, a low bonding temperature of 700 °C can also help to avoid the grain coarsening and the alteration of the grain structure especially of the EUROFER97 close to the bond interface.

Modeling of Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Ferguson, B. L.; Petrus, G. J.; Krauss, T. M.

1992-01-01

The project examined the effectiveness of studying the creep behavior of thermal barrier coating system through the use of a general purpose, large strain finite element program, NIKE2D. Constitutive models implemented in this code were applied to simulate thermal-elastic and creep behavior. Four separate ceramic-bond coat interface geometries were examined in combination with a variety of constitutive models and material properties. The reason for focusing attention on the ceramic-bond coat interface is that prior studies have shown that cracking occurs in the ceramic near interface features which act as stress concentration points. The model conditions examined include: (1) two bond coat coefficient of thermal expansion curves; (2) the creep coefficient and creep exponent of the bond coat for steady state creep; (3) the interface geometry; and (4) the material model employed to represent the bond coat, ceramic, and superalloy base.

Convective thinning of the lithosphere - A mechanism for the initiation of continental rifting

NASA Technical Reports Server (NTRS)

Spohn, T.; Schubert, G.

1982-01-01

A model of lithospheric thinning, in which heat is convected to the base and conducted within the lithosphere, is presented. An analytical equation for determinining the amount of thinning attainable on increasing the heat flux from the asthenosphere is derived, and a formula for lithosphere thickness approximations as a function of time is given. Initial and final equilibrium thicknesses, thermal diffusivity, transition temperature profile, and plume temperature profile are all factors considered for performing rate of thinning determinations. In addition, between initial and final equilibrium states, lithospheric thinning occurs at a rate which is inversely proportional to the square root of the time. Finally, uplift resulting from thermal expansion upon lithospheric thinning is on the order of 10 to the 2nd to 10 to the 3rd m.

Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

NASA Technical Reports Server (NTRS)

Barry, Mamadou Y.

1999-01-01

The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

Tunable thermal conductivity via domain structure engineering in ferroelectric thin films: A phase-field simulation

DOE PAGES

Wang, Jian -Jun; Wang, Yi; Ihlefeld, Jon F.; ...

2016-04-06

Effective thermal conductivity as a function of domain structure is studied by solving the heat conduction equation using a spectral iterative perturbation algorithm in materials with inhomogeneous thermal conductivity distribution. Using this proposed algorithm, the experimentally measured effective thermal conductivities of domain-engineered {001} p-BiFeO 3 thin films are quantitatively reproduced. In conjunction with two other testing examples, this proposed algorithm is proven to be an efficient tool for interpreting the relationship between the effective thermal conductivity and micro-/domain-structures. By combining this algorithm with the phase-field model of ferroelectric thin films, the effective thermal conductivity for PbZr 1-xTi xO 3 filmsmore » under different composition, thickness, strain, and working conditions is predicted. It is shown that the chemical composition, misfit strain, film thickness, film orientation, and a Piezoresponse Force Microscopy tip can be used to engineer the domain structures and tune the effective thermal conductivity. Furthermore, we expect our findings will stimulate future theoretical, experimental and engineering efforts on developing devices based on the tunable effective thermal conductivity in ferroelectric nanostructures.« less

Tunable thermal conductivity via domain structure engineering in ferroelectric thin films: A phase-field simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jian -Jun; Wang, Yi; Ihlefeld, Jon F.

Effective thermal conductivity as a function of domain structure is studied by solving the heat conduction equation using a spectral iterative perturbation algorithm in materials with inhomogeneous thermal conductivity distribution. Using this proposed algorithm, the experimentally measured effective thermal conductivities of domain-engineered {001} p-BiFeO 3 thin films are quantitatively reproduced. In conjunction with two other testing examples, this proposed algorithm is proven to be an efficient tool for interpreting the relationship between the effective thermal conductivity and micro-/domain-structures. By combining this algorithm with the phase-field model of ferroelectric thin films, the effective thermal conductivity for PbZr 1-xTi xO 3 filmsmore » under different composition, thickness, strain, and working conditions is predicted. It is shown that the chemical composition, misfit strain, film thickness, film orientation, and a Piezoresponse Force Microscopy tip can be used to engineer the domain structures and tune the effective thermal conductivity. Furthermore, we expect our findings will stimulate future theoretical, experimental and engineering efforts on developing devices based on the tunable effective thermal conductivity in ferroelectric nanostructures.« less

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

NASA Astrophysics Data System (ADS)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from electrochemical impedance spectroscopy. In the context of ARTICLE 1, thin film transistors based on soluble pentacene derivatives (prepared by the research group directed by Professor J. Anthony, at the University of Kentucky) were fabricated and characterized. GIXRD results performed on the thin films suggested a molecular arrangement favorable to charge transport in the source-drain direction, with the pi-pi stacking direction perpendicular to the channel. In ARTICLE 1, HMDS-treated SiO 2 substrates were used, to improve the surface coverage and to limit charge trapping at the dielectric surface. AFM showed good film coverage. The transistors showed ambipolar characteristics, attributed to the good matching between Au electrode work function and highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the pentacene derivative. The work reported in ARTICLE 2 deals with pi-conjugated thiopheno-azomethines (both in oligomer and polymer form) and oligothiophene analogues. In the former case, couplings in the polymer are based on azomethine (-N=C-) moieties whereas in the latter case they are based on more conventional protocols (-C=C-). The effect of the coupling protocols on the corresponding thin film transistors behavior was studied. The key conclusion of this study was that thiopheno-azomethines thin films can be effectively incorporated into organic transistors: thin films of oligothiopheno-azomethines and the oligothiophenes exhibit p-type behavior whereas thin films of polythiopheno-azomethine exhibit an ambipolar behavior. The hole mobility of the heat-treated thin films of oligothiopheno-azomethines was three orders of magnitude higher compared to its oligothiophene analogue. AFM, coupled with hyperspectral fluorescence imaging, were used to investigate the micro- and nano-scale surface coverage. For the oligothiopheno-azomethine we were able to quantitatively deduce the surface coverage. To contribute to the exploration of innovative strategies for low power consuming solution based electronics and capitalizing on the expertise of the group in the synthesis of solution deposited WO3 films the electrolyte gating approach was explored in ARTICLE 3. Ionic liquids, that are molten salts at room temperature, were employed as the electrolyte. Ionic liquids are attractive for their low volatility, non-flammability, ionic conductivity and thermal and electrochemical stability. Thin films of WO3 were deposited onto pre-patterned ITO substrates (source-drain interelectrode distance, 1 mm) prepared by wet chemical etching. SEM and AFM showed an interconnected film nanostructure. Electrolyte gated WO3 thin film transistors making use of 1-butyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([BMIM][TFSI]), 1-butyl-3-methyl imidazolium hexafluoro phosphate ([BMIM][PF6]), and 1-ethyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) showed an n-type transistor behavior. The possibility to obtain WO3 electrolyte gated transistors represents an opportunity to fabricate electronic devices working at relatively low operating voltages (about 1 V) by using simple fabrication techniques.

Numerical simulation of high-temperature thermal contact resistance and its reduction mechanism.

PubMed

Liu, Donghuan; Zhang, Jing

2018-01-01

High-temperature thermal contact resistance (TCR) plays an important role in heat-pipe-cooled thermal protection structures due to the existence of contact interface between the embedded heat pipe and the heat resistive structure, and the reduction mechanism of thermal contact resistance is of special interests in the design of such structures. The present paper proposed a finite element model of the high-temperature thermal contact resistance based on the multi-point contact model with the consideration of temperature-dependent material properties, heat radiation through the cavities at the interface and the effect of thermal interface material (TIM), and the geometry parameters of the finite element model are determined by simple surface roughness test and experimental data fitting. The experimental results of high-temperature thermal contact resistance between superalloy GH600 and C/C composite material are employed to validate the present finite element model. The effect of the crucial parameters on the thermal contact resistance with and without TIM are also investigated with the proposed finite element model.

Numerical simulation of high-temperature thermal contact resistance and its reduction mechanism

PubMed Central

Zhang, Jing

2018-01-01

High-temperature thermal contact resistance (TCR) plays an important role in heat-pipe-cooled thermal protection structures due to the existence of contact interface between the embedded heat pipe and the heat resistive structure, and the reduction mechanism of thermal contact resistance is of special interests in the design of such structures. The present paper proposed a finite element model of the high-temperature thermal contact resistance based on the multi-point contact model with the consideration of temperature-dependent material properties, heat radiation through the cavities at the interface and the effect of thermal interface material (TIM), and the geometry parameters of the finite element model are determined by simple surface roughness test and experimental data fitting. The experimental results of high-temperature thermal contact resistance between superalloy GH600 and C/C composite material are employed to validate the present finite element model. The effect of the crucial parameters on the thermal contact resistance with and without TIM are also investigated with the proposed finite element model. PMID:29547651

Tutorial: Determination of thermal boundary resistance by molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Liang, Zhi; Hu, Ming

2018-05-01

Due to the high surface-to-volume ratio of nanostructured components in microelectronics and other advanced devices, the thermal resistance at material interfaces can strongly affect the overall thermal behavior in these devices. Therefore, the thermal boundary resistance, R, must be taken into account in the thermal analysis of nanoscale structures and devices. This article is a tutorial on the determination of R and the analysis of interfacial thermal transport via molecular dynamics (MD) simulations. In addition to reviewing the commonly used equilibrium and non-equilibrium MD models for the determination of R, we also discuss several MD simulation methods which can be used to understand interfacial thermal transport behavior. To illustrate how these MD models work for various interfaces, we will show several examples of MD simulation results on thermal transport across solid-solid, solid-liquid, and solid-gas interfaces. The advantages and drawbacks of a few other MD models such as approach-to-equilibrium MD and first-principles MD are also discussed.

Characterization of HgCdTe and Related Materials For Third Generation Infrared Detectors

NASA Astrophysics Data System (ADS)

Vaghayenegar, Majid

Hg1-xCdxTe (MCT) has historically been the primary material used for infrared detectors. Recently, alternative substrates for MCT growth such as Si, as well as alternative infrared materials such as Hg1-xCdxSe, have been explored. This dissertation involves characterization of Hg-based infrared materials for third generation infrared detectors using a wide range of transmission electron microscopy (TEM) techniques. A microstructural study on HgCdTe/CdTe heterostructures grown by MBE on Si (211) substrates showed a thin ZnTe layer grown between CdTe and Si to mediate the large lattice mismatch of 19.5%. Observations showed large dislocation densities at the CdTe/ZnTe/Si (211) interfaces, which dropped off rapidly away from the interface. Growth of a thin HgTe buffer layer between HgCdTe and CdTe layers seemed to improve the HgCdTe layer quality by blocking some defects. A second study investigated the correlation of etch pits and dislocations in as-grown and thermal-cycle-annealed (TCA) HgCdTe (211) films. For as-grown samples, pits with triangular and fish-eye shapes were associated with Frank partial and perfect dislocations, respectively. Skew pits were determined to have a more complex nature. TCA reduced the etch-pit density by 72%. Although TCA processing eliminated the fish-eye pits, dislocations reappeared in shorter segments in the TCA samples. Large pits were observed in both as-grown and TCA samples, but the nature of any defects associated with these pits in the as-grown samples is unclear. Microstructural studies of HgCdSe revealed large dislocation density at ZnTe/Si(211) interfaces, which dropped off markedly with ZnTe thickness. Atomic-resolution STEM images showed that the large lattice mismatch at the ZnTe/Si interface was accommodated through {111}-type stacking faults. A detailed analysis showed that the stacking faults were inclined at angles of 19.5 and 90 degrees at both ZnTe/Si and HgCdSe/ZnTe interfaces. These stacking faults were associated with Shockley and Frank partial dislocations, respectively. Initial attempts to delineate individual dislocations by chemical etching revealed that while the etchants successfully attacked defective areas, many defects in close proximity to the pits were unaffected.

Nanoscale strengthening mechanisms in metallic thin film systems

NASA Astrophysics Data System (ADS)

Schoeppner, Rachel Lynn

Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity measurements on annealed films showed a significant drop in resistivity for the higher concentration ZnO films, which is proposed to be the result of a change in the particle-matrix interface structure. A model connecting the hardness and resistivity as a function of ZnO concentration has been developed based on the assumption that the impact of nm-scale ZnO precipitates on the mechanical and electrical behavior of Au films is likely dominated by a transition from semi-coherent to incoherent interfaces.

Performance Testing of Thermal Interface Filler Materials in a Bolted Aluminum Interface Under Thermal/Vacuum Conditions

NASA Technical Reports Server (NTRS)

Glasgow, Shaun; Kittredge, Ken

2003-01-01

A thermal interface material is one of the many tools that are often used as part of the thermal control scheme for space-based applications. These materials are placed between, for example, an avionics box and a cold plate, in order to improve the conduction heat transfer so that proper temperatures can be maintained. Historically at Marshall Space Flight Center, CHO-THERM@ 1671 has primarily been used for applications where an interface material was deemed necessary. However, there have been numerous alternatives come on the market in recent years. It was decided that a number of these materials should be tested against each other to see if there were better performing alternatives. The tests were done strictly to compare the thermal performance of the materials relative to each other under repeatable conditions and they do not take into consideration other design issues such as off-gassing, electrical conduction or isolation, etc. This paper details the materials tested, test apparatus, procedures, and results of these tests.

Thermal transport in lithium ion batteries: An experimental investigation of interfaces and granular materials

NASA Astrophysics Data System (ADS)

Gaitonde, Aalok Jaisheela Uday

Increasing usage and recent accidents due to lithium-ion (Li-ion) batteries exploding or catching on fire has inspired research on the characterization and thermal management of these batteries. In cylindrical 18650 cells, heat generated during the battery's charge/discharge cycle is poorly dissipated to the surrounding through its metallic case due to the poor thermal conductivity of the jelly roll, which is spirally wound with many interfaces between electrodes and the polymeric separator. This work presents a technique to measure the thermal conduction across the metallic case-plastic separator interface, which ultimately limits heat transfer out of the jelly roll. The polymeric separator and metallic case are harvested from discharged commercial 18650 battery cells for thermal testing. A miniaturized version of the reference bar method enables measurements of the interface resistance between the case and the separator by establishing a temperature gradient across a multilayer stack consisting of two reference layers of known thermal conductivity and the case-separator sample. The case-separator interfacial conductance is reported for a range of case temperatures and interface pressures. The mean thermal conductance across the case-separator interface is 670 +/- 275 W/(m2K) and no significant temperature or pressure dependence is observed. The effective thermal conductivity of the battery stack is measured to be 0.27 W/m/K and 0.32 W/m/K in linear and radial configurations, respectively. Many techniques for fabricating battery electrodes involve coating particles of the active materials on metallic current collectors. The impact of mechanical shearing on the resultant thermal properties of these packed particle beds during the fabrication process has not yet been studied. Thus, the final portion of this thesis designs and validates a measurement system to measure the effects of mechanical shearing on the thermal conductivity of packed granular beds. This system simultaneously shears the sample while applying a temperature gradient across the particle bed, enabling thermal conductivity measurements using a radial equivalent of the conventional reference bar method. Results of this research, which includes characterization of thermal conductance across the rate limiting separator-case interface, will help improve the design and reliability of lithium ion batteries. Cells of larger dimension and capacity could also be achieved by the improved understanding of thermal transport across the microscopic electrode stack. Better analytic models of the thermal response of the batteries could be constructed, by taking into account the interfacial conductance and thermal conductivity of the electrodes measured in this work. This is of particular importance in the current circumstances, where accidents and safety issues related to lithium ion batteries are on the increase.

Piezoelectric, Solar and Thermal Energy Harvesting for Hybrid Low-Power Generator Systems With Thin-Film Batteries

DTIC Science & Technology

2012-01-01

research has investigated simultaneous harvesting of vibration energy using the direct piezoelectric effect and harvesting of magnetic energy (alternating... Piezoelectric , solar and thermal energy harvesting for hybrid low-power generator systems with thin-film batteries This article has been downloaded...TYPE 3. DATES COVERED 00-00-2011 to 00-00-2011 4. TITLE AND SUBTITLE Piezoelectric , solar and thermal energy harvesting for hybrid low-power

Gluing interface qualification test results and gluing process development of the EUCLID near-infrared spectro-photometer optical assembly

NASA Astrophysics Data System (ADS)

Mottaghibonab, A.; Thiele, H.; Gubbini, E.; Dubowy, M.; Gal, C.; Mecsaci, A.; Gawlik, K.; Vongehr, M.; Grupp, F.; Penka, D.; Wimmer, C.; Bender, R.

2016-07-01

The Near Infrared Spectro-Photometer Optical assembly (NIOA) of EUCLID satellite requires high precision large lens holders with different lens materials, shapes and diameters. The aspherical lenses are glued into their separate CTE matched lens holder. The gluing of the lenses in their holder with 2K epoxy is selected as bonding process to minimize the stress in the lenses to achieve the required surface form error (SFE) performance (32nm) and lens position stability (+/-10μm) due to glue shrinkage. Adhesive shrinkage stress occurs during the glue curing at room temperature and operation in cryogenic temperatures, which might overstress the lens, cause performance loss, lens breakage or failure of the gluing interface. The selection of the suitable glue and required bonding parameters, design and qualification of the gluing interface, development and verification of the gluing process was a great challenge because of the low TRL and heritage of the bonding technology. The different material combinations (CaF2 to SS316L, LF5G15 and S-FTM16 to Titanium, SUPRASIL3001 to Invar M93), large diameter (168mm) and thin edge of the lenses, cryogenic nonoperational temperature (100K) and high performance accuracy of the lenses were the main design driver of the development. The different coefficients of thermal expansion (CTE) between lens and lens holder produce large local mechanical stress. As hygroscopic crystal calcium fluoride (CaF2) is very sensitive to moisture therefore an additional surface treatment of the gluing area is necessary. Extensive tests e.g glue handling and single lap shear tests are performed to select the suitable adhesive. Interface connection tests are performed to verify the feasibility of selected design (double pad design), injection channel, the roughness and treatment of the metal and lens interfaces, glue thickness, glue pad diameter and the gluing process. CTE and dynamic measurements of the glue, thermal cycling, damp- heat, connection shear and tension tests with all material combinations at RT and 100K are carried out to qualify the gluing interface. The gluing interface of the glued lenses in their mounts is also qualified with thermal cycling, 3D coordinate measurements before and after environmental tests, Polarimetry and vibration test of the lens assemblies. A multi-function double pad gluing tool and lens mounting tool is designed, manufactured and verified to meet the lens positioning and alignment performance of the lens in the holder which provides the possibility to glue lenses, filters, mirrors with different diameters, shapes and thickness with +/-10μm accuracy in plane, out of plane and +/-10 arcsec in tip/tilt with respect to the lens holder interface. The paper presents the glue interface qualification results, the qualification/verification methods, the developed ground support equipment and the gluing process of the EUCLID high precision large cryogenic lens mounts. Test results achieved in the test campaign demonstrate the suitability of the selected adhesive, glue pad design, interface parameters and the processes for the precise gluing of the lenses in lens holders for all lenses. The qualification models of the NIOA are successfully glued and qualified. The developed process can also be used for other glass materials e.g. MaF2 and optical black coated metallic surfaces.

Velocity of the high-spin low-spin interface inside the thermal hysteresis loop of a spin-crossover crystal, via photothermal control of the interface motion.

PubMed

Slimani, Ahmed; Varret, François; Boukheddaden, Kamel; Garrot, Damien; Oubouchou, Hassane; Kaizaki, Sumio

2013-02-22

We investigated by optical microscopy the thermal transition of the spin-crossover dinuclear iron(II) compound [(Fe(NCSe)(py)(2))(2)(m-bpypz)]. In a high-quality crystal the high-spin (HS) low-spin (LS) thermal transition took place with a sizable hysteresis, at ~108 K and ~116 K on cooling and heating, respectively, through the growth of a single macroscopic domain with a straight LS and HS interface. The interface orientation was almost constant and its propagation velocity was close to ~6 and 26 μ m s(-1) for the on-cooling and on-heating processes, respectively. We found that the motion of the interface was sensitive to the intensity of the irradiation beam of the microscope, through a photothermal effect. By fine-tuning the intensity we could stop and even reverse the interface motion. This way we stabilized a biphasic state of the crystal, and we followed the spontaneous motion of the interface at different temperatures inside the thermal hysteresis loop. This experiment gives access for the first time to an accurate determination of the equilibrium temperature in the case of thermal hysteresis--which was not accessible by the usual quasistatic investigations. The temperature dependence of the propagation velocity inside the hysteretic interval was revealed to be highly nonlinear, and it was quantitatively reproduced by a dynamical mean-field theory, which made possible an estimate of the macroscopic energy barrier.

Calculations of Exchange Bias in Thin Films with Ferromagnetic/Antiferromagnetic Interfaces

NASA Astrophysics Data System (ADS)

Koon, N. C.

1997-06-01

A microscopic explanation of exchange bias in thin films with compensated ferro/antiferromagnetic interfaces is presented. Full micromagnetic calculations show the interfacial exchange coupling to be relatively strong with a perpendicular orientation between the ferro/antiferromagnetic axis directions, similar to the classic ``spin-flop'' state in bulk antiferromagnets. With reasonable parameters the calculations predict bias fields comparable to those observed and provide a possible explanation for both anomalous high field rotational hysteresis and recently discovered ``positive'' exchange bias.

Mechanical and Thermal Analysis of Classical Functionally Graded Coated Beam

NASA Astrophysics Data System (ADS)

Toudehdehghan, Abdolreza; Mujibur Rahman, Md.; Tarlochan, Faris

2018-03-01

The governing equation of a classical rectangular coated beam made of two layers subjected to thermal and uniformly distributed mechanical loads are derived by using the principle of virtual displacements and based on Euler-Bernoulli deformation beam theory (EBT). The aim of this paper was to analyze the static behavior of clamped-clamped thin coated beam under thermo-mechanical load using MATLAB. Two models were considered for composite coated. The first model was consisting of ceramic layer as a coated and substrate which was metal (HC model). The second model was consisting of Functionally Graded Material (FGM) as a coated layer and metal substrate (FGC model). From the result it was apparent that the superiority of the FGC composite against conventional coated composite has been demonstrated. From the analysis, the stress level throughout the thickness at the interface of the coated beam for the FGC was reduced. Yet, the deflection in return was observed to increase. Therefore, this could cater to various new engineering applications where warrant the utilization of material that has properties that are well-beyond the capabilities of the conventional or yesteryears materials.

A study on the relationships between corrosion properties and chemistry of thermally oxidised surface films formed on polished commercial magnesium alloys AZ31 and AZ61

NASA Astrophysics Data System (ADS)

Feliu, Sebastián; Samaniego, Alejandro; Barranco, Violeta; El-Hadad, A. A.; Llorente, Irene; Serra, Carmen; Galván, J. C.

2014-03-01

This paper studies the changes in chemical composition of the thin oxide surface films induced by heating in air at 200 °C for time intervals from 5 min to 60 min on the freshly polished commercial AZ31 and AZ61 alloys with a view to better understanding their protective properties. This thermal treatment resulted in the formation of layers enriched in metallic aluminium at the interface between the outer MgO surface films and the bulk material. A strong link was found between the degree of metallic Al enrichment in the subsurface layer (from 10 to 15 at.%) observed by XPS (X-ray photoelectron spectroscopy) in the AZ61 treated samples and the increase in protective properties observed by EIS (electrochemical impedance spectroscopy) in the immersion test in 0.6 M NaCl. Heating for 5-60 min in air at 200 °C seems to be an effective, easy to perform and inexpensive method for increasing the corrosion resistance of the AZ61 alloy by approximately two or three times.

Application of complex geometrical optics to determination of thermal, transport, and optical parameters of thin films by the photothermal beam deflection technique.

PubMed

Korte, Dorota; Franko, Mladen

2015-01-01

In this work, complex geometrical optics is, for what we believe is the first time, applied instead of geometrical or wave optics to describe the probe beam interaction with the field of the thermal wave in photothermal beam deflection (photothermal deflection spectroscopy) experiments on thin films. On the basis of this approach the thermal (thermal diffusivity and conductivity), optical (energy band gap), and transport (carrier lifetime) parameters of the semiconductor thin films (pure TiO2, N- and C-doped TiO2, or TiO2/SiO2 composites deposited on a glass or aluminum support) were determined with better accuracy and simultaneously during one measurement. The results are in good agreement with results obtained by the use of other methods and reported in the literature.

Thin film assembly of nano-sized Zn(II)-8-hydroxy-5,7-dinitroquinolate by using successive ion layer adsorption and reaction (SILAR) technique: characterization and optical-electrical-photovoltaic properties.

PubMed

Farag, A A M; Haggag, Sawsan M S; Mahmoud, Mohamed E

2012-07-01

A method is described for thin film assembly of nano-sized Zn(II)-8-hydroxy-5,7-dinitroquinolate complex, Zn[((NO(2))(2)-8HQ)(2)] by using successive ion layer adsorption and reaction (SILAR) technique. Highly homogeneous assembled nano-sized metal complex thin films with particle size distribution in the range 27-47nm was identified by using scanning electron microscopy (SEM). Zn[((NO(2))(2)-8HQ)(2)] and [(NO(2))(2)-8HQ] ligand were studied by thermal gravimetric analysis (TGA). Graphical representation of temperature dependence of the dark electrical conductivity produced two distinct linear parts for two activation energies at 0.377eV and 1.11eV. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals a direct allowed transition with a fundamental band gap of 2.74eV. The dark current density-voltage (J-V) characteristics showed the rectification effect due to the formation of junction barrier of Zn[((NO(2))(2)-8HQ)(2)] complex film/n-Si interface. The photocurrent in the reverse direction is strongly increased by photo-illumination and the photovoltaic characteristics were also determined and evaluated. Copyright © 2012 Elsevier B.V. All rights reserved.

Laser transmission welding of polylactide to aluminium thin films for applications in the food-packaging industry

NASA Astrophysics Data System (ADS)

Pagano, Nunziante; Campana, Giampaolo; Fiorini, Maurizio; Morelli, Raffaele

2017-06-01

Laser transmission welding is a suitable technology to join thin films of similar or dissimilar materials without any addition of chemical solvents or adhesives. This process represents a very important opportunity in the case of packaging applications (for example in food and pharmaceutical sectors) where the realisation of strong welds by avoiding the contact between the thermal source and the processed materials and, furthermore, without using any third material that could contaminate the contents, is reliable and relevant. The aim of this paper is to prove the feasibility of the laser transmission welding of polylactide to aluminium thin films by means of laser transmission welding through the use of a low power pulsed wave fibre laser. Laser joint samples were realised, analysed by optical microscopy to reveal possible defects and to evaluate the weld width and tested to measure the mechanical tensile strength. An accurate relationship between the joint quality and both the welding speed and the k-factor, which represents the delivered energy per unit length and affects the bonding mechanism at the interface, was determined. The achieved feasibility area is extremely narrow and possible only for the higher value of the average power. The joint tensile strength was proven to be in a proportional relationship with the effective bonded area and reached satisfactory values.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

PubMed

Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

2018-04-25

Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

PubMed Central

Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

2017-01-01

The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

Thin Semiconductor/Metal Films For Infrared Devices

NASA Technical Reports Server (NTRS)

Lamb, James L.; Nagendra, Channamallappa L.

1995-01-01

Spectral responses of absorbers and reflectors tailored. Thin cermet films composites of metals and semiconductors undergoing development for use as broadband infrared reflectors and absorbers. Development extends concepts of semiconductor and dielectric films used as interference filters for infrared light and visible light. Composite films offer advantages over semiconductor films. Addition of metal particles contributes additional thermal conductivity, reducing thermal gradients and associated thermal stresses, with resultant enhancements of thermal stability. Because values of n in composite films made large, same optical effects achieved with lesser thicknesses. By decreasing thicknesses of films, one not only decreases weights but also contributes further to reductions of thermal stresses.

Fabrication of resonant patterns using thermal nano-imprint lithography for thin-film photovoltaic applications.

PubMed

Khaleque, Tanzina; Svavarsson, Halldor Gudfinnur; Magnusson, Robert

2013-07-01

A single-step, low-cost fabrication method to generate resonant nano-grating patterns on poly-methyl-methacrylate (PMMA; plexiglas) substrates using thermal nano-imprint lithography is reported. A guided-mode resonant structure is obtained by subsequent deposition of thin films of transparent conductive oxide and amorphous silicon on the imprinted area. Referenced to equivalent planar structures, around 25% and 45% integrated optical absorbance enhancement is observed over the 450-nm to 900-nm wavelength range in one- and two-dimensional patterned samples, respectively. The fabricated elements provided have 300-nm periods. Thermally imprinted thermoplastic substrates hold potential for low-cost fabrication of nano-patterned thin-film solar cells for efficient light management.

Effect of coating thickness on microstructure and low temperature cyclic thermal fatigue behavior of thermal barrier coating (Al2O3)

NASA Astrophysics Data System (ADS)

Verma, Vijay; Patel, Sachin; Swarnkar, Vikas; K, Rajput S.

2018-03-01

Effect of coating thickness on low temperature cyclic thermal fatigue behaviour of Al2O3 thermal barrier coating (TBC) was concluded through the cyclic furnace thermal fatigue test (CFTF). Detonation gun (Thermal Spray) process was used for bond coating of NiCr and top coating of Al2O3 on Aluminium Alloy 6061 substrate. Top coating was done at two level of thickness to investigate the effect of coating thickness on low temperature cyclic thermal fatigue. The top coat of thickness 100μm-150μm was considered as thin TBC while the top coat of thickness 250μm-300μm was considered as thick TBC. The thickness of bond coat was taken as 120μm constant for both level of Al2O3 top coating. During CFTF test appearance of any crack on coated surface was adapted as main criterion of coating failure. Crack initiation was observed at edges and corner of thin thermal barrier coating after 60 number of thermal fatigue cycles while in case of thick thermal barrier coating these crack initiation was observed after 72 cycles of cyclic thermal fatigue test. During the study, it was observed that thick thermal barrier coating survived for long duration in comparison of thin TBC. Hence it can be concluded that application of thick TBC is more favourable to improve thermal durability of any component.

Effects of crystallization interfaces on irradiated ferroelectric thin films

NASA Astrophysics Data System (ADS)

Brewer, S. J.; Williams, S. C.; Cress, C. D.; Bassiri-Gharb, N.

2017-11-01

This work investigates the role of crystallization interfaces and chemical heterogeneity in the radiation tolerance of chemical solution-deposited lead zirconate titanate (PZT) thin films. Two sets of PZT thin films were fabricated with crystallization performed at (i) every deposited layer or (ii) every three layers. The films were exposed to a range of 60Co gamma radiation doses, between 0.2 and 20 Mrad, and their functional response was compared before and after irradiation. The observed trends indicate enhancements of dielectric, ferroelectric, and piezoelectric responses at low radiation doses and degradation of the same at higher doses. Response enhancements are expected to result from low-dose (≤2 Mrad), ionizing radiation-induced charging of internal interfaces—an effect that results in neutralization of pre-existing internal bias in the samples. At higher radiation doses (>2 Mrad), accumulation and self-ordering of radiation-modified, mobile, oxygen vacancy-related defects contribute to degradation of dielectric, ferroelectric, and piezoelectric properties, exacerbated in the samples with more crystallization layers, potentially due to increased defect accumulation at these internal interfaces. These results suggest that the interaction between radiation and crystallization interfaces is multifaceted—the effects of ionization, domain wall motion, point defect mobility, and microstructure are considered.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

Burner liner thermal/structural load modeling: TRANCITS program user's manual

NASA Technical Reports Server (NTRS)

Maffeo, R.

1985-01-01

Transfer Analysis Code to Interface Thermal/Structural Problems (TRANCITS) is discussed. The TRANCITS code satisfies all the objectives for transferring thermal data between heat transfer and structural models of combustor liners and it can be used as a generic thermal translator between heat transfer and stress models of any component, regardless of the geometry. The TRANCITS can accurately and efficiently convert the temperature distributions predicted by the heat transfer programs to those required by the stress codes. It can be used for both linear and nonlinear structural codes and can produce nodal temperatures, elemental centroid temperatures, or elemental Gauss point temperatures. The thermal output of both the MARC and SINDA heat transfer codes can be interfaced directly with TRANCITS, and it will automatically produce stress model codes formatted for NASTRAN and MARC. Any thermal program and structural program can be interfaced by using the neutral input and output forms supported by TRANCITS.

A Diffuse Interface Model with Immiscibility Preservation

PubMed Central

Tiwari, Arpit; Freund, Jonathan B.; Pantano, Carlos

2013-01-01

A new, simple, and computationally efficient interface capturing scheme based on a diffuse interface approach is presented for simulation of compressible multiphase flows. Multi-fluid interfaces are represented using field variables (interface functions) with associated transport equations that are augmented, with respect to an established formulation, to enforce a selected interface thickness. The resulting interface region can be set just thick enough to be resolved by the underlying mesh and numerical method, yet thin enough to provide an efficient model for dynamics of well-resolved scales. A key advance in the present method is that the interface regularization is asymptotically compatible with the thermodynamic mixture laws of the mixture model upon which it is constructed. It incorporates first-order pressure and velocity non-equilibrium effects while preserving interface conditions for equilibrium flows, even within the thin diffused mixture region. We first quantify the improved convergence of this formulation in some widely used one-dimensional configurations, then show that it enables fundamentally better simulations of bubble dynamics. Demonstrations include both a spherical bubble collapse, which is shown to maintain excellent symmetry despite the Cartesian mesh, and a jetting bubble collapse adjacent a wall. Comparisons show that without the new formulation the jet is suppressed by numerical diffusion leading to qualitatively incorrect results. PMID:24058207