Method of fabricating conductive electrodes on the front and backside of a thin film structure

DOEpatents

Tabada, Phillipe J [Roseville, CA; Tabada, legal representative, Melody; Pannu, Satinderpall S [Pleasanton, CA

2011-05-22

A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Magneto-Optic Materials for Biasing Ring Laser Gyros. Report Number 3. (Computer Model for Evaluating Scattering from Multi-Layer Dielectric Thin Film Structures Containing a Magnetic Layer.

DTIC Science & Technology

1980-09-30

16. "Substituted Rare Earth Garnet Substrate Crystals and LPE Films for Magneto-optic Applications," M. Kestigian, W.R. Bekebrede and A.B. Smith, J...transparent garnet magnetic films have been discussed by workers at Sperry [4,5]. The above considerations indicate that it is highly desirable to have...metallic magnetic film , such as a garnet , on top of an MLD stack. C. A partially transparent (very thin) magnetic metal film on top of an MLD stack. We

The impact of surface chemistry on the performance of localized solar-driven evaporation system

PubMed Central

Yu, Shengtao; Zhang, Yao; Duan, Haoze; Liu, Yanming; Quan, Xiaojun; Tao, Peng; Shang, Wen; Wu, Jianbo; Song, Chengyi; Deng, Tao

2015-01-01

This report investigates the influence of surface chemistry (or wettability) on the evaporation performance of free-standing double-layered thin film on the surface of water. Such newly developed evaporation system is composed of top plasmonic light-to-heat conversion layer and bottom porous supporting layer. Under solar light illumination, the induced plasmonic heat will be localized within the film. By modulating the wettability of such evaporation system through the control of surface chemistry, the evaporation rates are differentiated between hydrophilized and hydrophobized anodic aluminum oxide membrane-based double layered thin films. Additionally, this work demonstrated that the evaporation rate mainly depends on the wettability of bottom supporting layer rather than that of top light-to-heat conversion layer. The findings in this study not only elucidate the role of surface chemistry of each layer of such double-layered evaporation system, but also provide additional design guidelines for such localized evaporation system in applications including desalination, distillation and power generation. PMID:26337561

The impact of surface chemistry on the performance of localized solar-driven evaporation system.

PubMed

Yu, Shengtao; Zhang, Yao; Duan, Haoze; Liu, Yanming; Quan, Xiaojun; Tao, Peng; Shang, Wen; Wu, Jianbo; Song, Chengyi; Deng, Tao

2015-09-04

This report investigates the influence of surface chemistry (or wettability) on the evaporation performance of free-standing double-layered thin film on the surface of water. Such newly developed evaporation system is composed of top plasmonic light-to-heat conversion layer and bottom porous supporting layer. Under solar light illumination, the induced plasmonic heat will be localized within the film. By modulating the wettability of such evaporation system through the control of surface chemistry, the evaporation rates are differentiated between hydrophilized and hydrophobized anodic aluminum oxide membrane-based double layered thin films. Additionally, this work demonstrated that the evaporation rate mainly depends on the wettability of bottom supporting layer rather than that of top light-to-heat conversion layer. The findings in this study not only elucidate the role of surface chemistry of each layer of such double-layered evaporation system, but also provide additional design guidelines for such localized evaporation system in applications including desalination, distillation and power generation.

Effects of Different Materials Used for Internal Floating Electrode on the Photovoltaic Properties of Tandem Type Organic Solar Cell

NASA Astrophysics Data System (ADS)

Triyana, Kuwat; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

2004-04-01

Three thin heterojunctions sandwiched between indium tin oxide (ITO) and the top electrode as triple-heterojunction organic solar cells have been fabricated. Each heterojunction cell consists of CuPc as a donor layer and perilene tetracrboxylic-bis-benzimidazole (PTCBI) as an acceptor layer. Ultra thin (1 nm average thickness) layers of Ag or Au have been inserted between two heterojunctions as an internal electrode. Ag and Au were chosen as materials both for internal floating and top electrodes. Influences of different deposition sequences of the organic layer in each heterojunction cell and different electrode materials were also investigated. The optimum devices were obtained when the same material was used both as an internal electrode and a top electrode. When the deposition sequence of the heterojunction is PTCBI/CuPc, the most suitable electrode is Au and the ITO is negative relative to the top electrode. Meanwhile, Ag is suitable for an electrode when the deposition sequence is CuPc/PTCBI. In this second deposition sequence, the ITO is positive relative to the top electrode. The open circuit voltage (Voc) of both optimum devices is on the order of 1.35-1.5 V. These values are approximately three times higher than that in single-heterojunction organic solar cells.

Observations of metal concentrations in E-region sporadic thin layers using incoherent-scatter radar

NASA Astrophysics Data System (ADS)

Suzuki, Nobuhiro

This thesis has used incoherent-scatter radar data from the facility at Sondrestrom, Greenland to determine the ion mass values inside thin sporadic-E layers in the lower ionosphere. Metallic positively-charged ions of meteoric origin are deposited in the earth's upper atmosphere over a height range of about 85-120 km. Electric fields and neutral-gas (eg N2, O, O2) winds at high latitudes may produce convergent ion dynamics that results in the re-distribution of the background altitude distribution of the ions to form thin (1-3 km) high-density layers that are detectable with radar. A large database of experimental radar observations has been processed to determine ion mass values inside these thin ion layers. The range resolution of the radar was 600 meters that permitted mass determinations at several altitude steps within the layers. Near the lower edge of the layers the ion mass values were in the range 20-25 amu while at the top portion of the layers the mass values were generally in the range 30-40 amu. The numerical values are consistent with in-situ mass spectrometer data obtained by other researchers that suggest these layers are mainly composed of a mixture or Mg +, Si+, and Fe + ions. The small tendency for heavier ions to reside at the top portion of the layers is consistent with theory. The results have also found new evidence for the existence of complex-shaped multiple layers; the examples studied suggest similar ion mass values in different layers that in some cases are separated in altitude by several km.

Taking into Account Interelement Interference in X-Ray Fluorescence Analysis of Thin Two-Layer Ti/V Systems

NASA Astrophysics Data System (ADS)

Mashin, N. I.; Razuvaev, A. G.; Cherniaeva, E. A.; Gafarova, L. M.; Ershov, A. V.

2018-03-01

We propose a new method for determining the thickness of layers in x-ray fluorescence analysis of two-layer Ti/V systems, using easily fabricated standardized film layers obtained by sputter deposition of titanium on a polymer film substrate. We have calculated correction factors taking into account the level of attenuation for the intensity of the primary emission from the x-ray tube and the analytical line for the element of the bottom layer in the top layer, and the enhancement of the fluorescence intensity for the top layer by the emission of atoms in the bottom layer.

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Photoresist laminate

DOEpatents

Andrade, A.D.; Galbraith, L.K.

1979-10-01

The disclosure relates to a laminated negative dry-film photoresist for the production of thick, as well as thin, patterns with vertical sidewalls. Uniform depthwise exposure in a photoresist layer is effected by the use of an ultraviolet filtering top layer.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Ceramic substrate including thin film multilayer surface conductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolf, Joseph Ambrose; Peterson, Kenneth A.

2017-05-09

A ceramic substrate comprises a plurality of ceramic sheets, a plurality of inner conductive layers, a plurality of vias, and an upper conductive layer. The ceramic sheets are stacked one on top of another and include a top ceramic sheet. The inner conductive layers include electrically conductive material that forms electrically conductive features on an upper surface of each ceramic sheet excluding the top ceramic sheet. The vias are formed in each of the ceramic sheets with each via being filled with electrically conductive material. The upper conductive layer includes electrically conductive material that forms electrically conductive features on anmore » upper surface of the top ceramic sheet. The upper conductive layer is constructed from a stack of four sublayers. A first sublayer is formed from titanium. A second sublayer is formed from copper. A third sublayer is formed from platinum. A fourth sublayer is formed from gold.« less

Evolution of Meso-Cenozoic lithospheric thermal-rheological structure in the Jiyang sub-basin, Bohai Bay Basin, eastern North China Craton

NASA Astrophysics Data System (ADS)

Xu, Wei; Qiu, Nansheng; Wang, Ye; Chang, Jian

2018-01-01

The Meso-Cenozoic lithospheric thermal-rheological structure and lithospheric strength evolution of the Jiyang sub-basin were modeled using thermal history, crustal structure, and rheological parameter data. Results indicate that the thermal-rheological structure of the Jiyang sub-basin has exhibited obvious rheological stratification and changes over time. During the Early Mesozoic, the uppermost portion of the upper crust, middle crust, and the top part of the upper mantle had a thick brittle layer. During the early Early Cretaceous, the top of the middle crust's brittle layer thinned because of lithosphere thinning and temperature increase, and the uppermost portion of the upper mantle was almost occupied by a ductile layer. During the late Early Cretaceous, the brittle layer of the middle crust and the upper mantle changed to a ductile one. Then, the uppermost portion of the middle crust changed to a thin brittle layer in the late Cretaceous. During the early Paleogene, the thin brittle layer of the middle crust became even thinner and shallower under the condition of crustal extension. Currently, with the decrease in lithospheric temperature, the top of the upper crust, middle crust, and the uppermost portion of the upper mantle are of a brittle layer. The total lithospheric strength and the effective elastic thickness ( T e) in Meso-Cenozoic indicate that the Jiyang sub-basin experienced two weakened stages: during the late Early Cretaceous and the early Paleogene. The total lithospheric strength (approximately 4-5 × 1013 N m-1) and T e (approximately 50-60 km) during the Early Mesozoic was larger than that after the Late Jurassic (2-7 × 1012 N m-1 and 19-39 km, respectively). The results also reflect the subduction, and rollback of Pacific plate is the geodynamic mechanism of the destruction of the eastern North China Craton.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Insight into the epitaxial encapsulation of Pd catalysts in an oriented metalloporphyrin network thin film for tandem catalysis.

PubMed

Vohra, M Ismail; Li, De-Jing; Gu, Zhi-Gang; Zhang, Jian

2017-06-14

A palladium catalyst (Pd-Cs) encapsulated metalloporphyrin network PIZA-1 thin film with bifunctional properties has been developed through a modified epitaxial layer-by-layer encapsulation approach. Combining the oxidation activity of Pd-Cs and the acetalization activity of the Lewis acidic sites in the PIZA-1 thin film, this bifunctional catalyst of the Pd-Cs@PIZA-1 thin film exhibits a good catalytic activity in a one-pot tandem oxidation-acetalization reaction. Furthermore, the surface components can be controlled by ending the top layer with different precursors in the thin film preparation procedures. The catalytic performances of these thin films with different surface composites were studied under the same conditions, which showed different reaction conversions. The result revealed that the surface component can influence the catalytic performance of the thin films. This epitaxial encapsulation offers a good understanding of the tandem catalysis for thin film materials and provides useful guidance to develop new thin film materials with catalytic properties.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2006-10-31

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2010-06-15

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

NASA Astrophysics Data System (ADS)

Yoo, Tae-Hee; Sang, Byoung-In; Wang, Byung-Yong; Lim, Dae-Soon; Kang, Hyun Wook; Choi, Won Kook; Lee, Young Tack; Oh, Young-Jei; Hwang, Do Kyung

2016-04-01

Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Um, Jae Gwang; Park, Min Sang

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of Inmore » metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.« less

Plasmon resonance imaging apparatus having nano-lycurgus-cup arrays and methods of use

DOEpatents

Liu, Gang Logan; Gartia, Manas Ranjan; Hsiao, Austin Yin Kyai

2016-10-11

Apparatus and methods are disclosed that are configured to permit nanoplasmonic spectroscopy sensing in the form of colorimetric sensing. An example apparatus involves: (a) an array layer having a top surface and a bottom surface, wherein a plurality of nanoholes are defined in the top surface of the array layer, wherein the plurality of nanoholes each have at least one sidewall surface and a bottom surface, (b) a thin metal film disposed on the top surface of the array layer and on the bottom surface of each of the plurality of nanoholes, and (c) a plurality of nanoparticles disposed on the at least one sidewall surface of the plurality of nanoholes.

Interplay between dewetting and layer inversion in poly(4-vinylpyridine)/polystyrene bilayers.

PubMed

Thickett, Stuart C; Harris, Andrew; Neto, Chiara

2010-10-19

We investigated the morphology and dynamics of the dewetting of metastable poly(4-vinylpyridine) (P4VP) thin films situated on top of polystyrene (PS) thin films as a function of the molecular weight and thickness of both films. We focused on the competition between the dewetting process, occurring as a result of unfavorable intermolecular interactions at the P4VP/PS interface, and layer inversion due to the lower surface energy of PS. By means of optical and atomic force microscopy (AFM), we observed how both the dynamics of the instability and the morphology of the emerging patterns depend on the ratio of the molecular weights of the polymer films. When the bottom PS layer was less viscous than the top P4VP layer (liquid-liquid dewetting), nucleated holes in the P4VP film typically stopped growing at long annealing times because of a combination of viscous dissipation in the bottom layer and partial layer inversion. Full layer inversion was achieved when the viscosity of the top P4VP layer was significantly greater (>10⁴) than the viscosity of the PS layer underneath, which is attributed to strongly different mobilities of the two layers. The density of holes produced by nucleation dewetting was observed for the first time to depend on the thickness of the top film as well as the polymer molecular weight. The final (completely dewetted) morphology of isolated droplets could be achieved only if the time frame of layer inversion was significantly slower than that of dewetting, which was characteristic of high-viscosity PS underlayers that allowed dewetting to fall into a liquid-solid regime. Assuming a simple reptation model for layer inversion occurring at the dewetting front, the observed surface morphologies could be predicted on the basis of the relative rates of dewetting and layer inversion.

Investigation of graphene-on-metal substrates for SPR-based sensor using finite-difference time domain.

PubMed

Said, Fairus Atida; Menon, Pulliyaseri Susthitha; Rajendran, Venkatachalam; Shaari, Sahbudin; Majlis, Burhanuddin Y

2017-12-01

In this study, the authors investigated the effects of a single layer graphene as a coating layer on top of metal thin films such as silver, gold, aluminum and copper using finite-difference time domain method. To enhance the resolution of surface plasmon resonance (SPR) sensor, it is necessary to increase the SPR reflectivity and decrease the full-width-half maximum (FWHM) of the SPR curve so that there is minimum uncertainty in the determination of the resonance dip. Numerical data was verified with analytical and experimental data where all the data were in good agreement with resonance angle differing in <10% due to noise present in components such as humidity and temperature. In further analysis, reflectivity and FWHM were compared among four types of metal with various thin film thicknesses where graphene was applied on top of the metal layers, and data was compared against pure conventional metal thin films. A 60 nm-thick Au thin film results in higher performance with reflectivity of 92.4% and FWHM of 0.88° whereas single layer graphene-on-60 nm-thick Au gave reflectivity of 91.7% and FWHM of 1.32°. However, a graphene-on-40 nm-thick Ag also gave good performance with narrower FWHM of 0.88° and reflection spectra of 89.2%.

Durable high strength cement concrete topping for asphalt roads

NASA Astrophysics Data System (ADS)

Vyrozhemskyi, Valerii; Krayushkina, Kateryna; Bidnenko, Nataliia

2017-09-01

Work on improving riding qualities of pavements by means of placing a thin cement layer with high roughness and strength properties on the existing asphalt pavement were conducted in Ukraine for the first time. Such pavement is called HPCM (High Performance Cementitious Material). This is a high-strength thin cement-layer pavement of 8-9 mm thickness reinforced with metal or polymer fiber of less than 5 mm length. Increased grip properties are caused by placement of stone material of 3-5 mm fraction on the concrete surface. As a result of the research, the preparation and placement technology of high-strength cement thin-layer pavement reinforced with fiber was developed to improve friction properties of existing asphalt pavements which ensures their roughness and durability. It must be emphasized that HPCM is a fundamentally new type of thin-layer pavement in which a rigid layer of 10 mm thickness is placed on a non-rigid base thereby improving riding qualities of asphalt pavement at any season of a year.

Enhanced structural color generation in aluminum metamaterials coated with a thin polymer layer

DOE PAGES

Cheng, Fei; Yang, Xiaodong; Rosenmann, Daniel; ...

2015-09-18

A high-resolution and angle-insensitive structural color generation platform is demonstrated based on triple-layer aluminum-silica-aluminum metamaterials supporting surface plasmon resonances tunable across the entire visible spectrum. The color performances of the fabricated aluminum metamaterials can be strongly enhanced by coating a thin transparent polymer layer on top. The results show that the presence of the polymer layer induces a better impedance matching for the plasmonic resonances to the free space so that strong light absorption can be obtained, leading to the generation of pure colors in cyan, magenta, yellow and black (CMYK) with high color saturation.

Characterization of a New Organosilicon Photoresist

NASA Astrophysics Data System (ADS)

Cunningham, Wells C.

1987-08-01

For a number of years, there has lo'ep. great interest in organometallic based photoresists for use as the top layer in multilevel resist schemes.-' In general, bilevel approaches to lithography are forced upon the industry as a means of planarizing topography for a subsequent patterning step. This pattern is initially defined by exposure and development of a thin top layer (0.3 to 0.5μm) over the thicker bottom layer (1.0 to 2.0μm). (See Figure 1). In a conventional bilevel approach, the chosen bottom layer is photoactive at a wavelength for which the top is relatively opaque. The top level acts as a portable conformable mask (PCM) for image transfer through the bottom layer after its exposure and wet development. By using a silicon containing photoresist on the top image transfer may be accomplished using an oxygen plasma instead of a second exposure and development. The PCM in this case acts as an etch mask by forming a silicon dioxide crust in the plasma which slows the etch rate of the top versus the bottom layer. A generic curve of etch rate of a photoresist versus percent silicon by weight is shown in Figure 2. The shape is similar over a wide range of organosilicon polymers.5,6

Casting Of Multilayer Ceramic Tapes

NASA Technical Reports Server (NTRS)

Collins, Earl R., Jr.

1991-01-01

Procedure for casting thin, multilayer ceramic membranes, commonly called tapes, involves centrifugal casting at accelerations of 1,800 to 2,000 times normal gravitational acceleration. Layers of tape cast one at a time on top of any previous layer or layers. Each layer cast from slurry of ground ceramic suspended in mixture of solvents, binders, and other components. Used in capacitors, fuel cells, and electrolytic separation of oxygen from air.

Thin film encapsulation for flexible AM-OLED: a review

NASA Astrophysics Data System (ADS)

Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

2011-03-01

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

Thin layer composite unimorph ferroelectric driver and sensor

NASA Technical Reports Server (NTRS)

Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

2004-01-01

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

NASA Technical Reports Server (NTRS)

Helbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Antony, Jr. (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

1995-01-01

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

PubMed

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Structural and electrical investigations of MBE-grown SiGe nanoislands

NASA Astrophysics Data System (ADS)

Şeker, İsa; Karatutlu, Ali; Gürbüz, Osman; Yanık, Serhat; Bakış, Yakup; Karakız, Mehmet

2018-01-01

SiGe nanoislands were grown by Molecular Beam Epitaxy (MBE) method on Si (100) substrates with comparative growth parameters such as annealing temperature, top Ge content and layer-by-layer annealing (LBLA). XRD and Raman data suggest that annealing temperature, top Ge content and layer-by-layer annealing (LBLA) can overall give a control not only over the amorphous content but also over yielding the strained Ge layer formation in addition to mostly Ge crystallites. Depending on the layer design and growth conditions, size of the crystallites was observed to be changed. Four Point Probe (FPP) Method via Semiconductor Analyzer shows that 100 °C rise in annealing temperature of the samples with Si0.25Ge0.75 top layers caused rougher islands with vacancies which further resulted in the formation of laterally higher resistive thin film sheets. However, vertically performed I-AFM analysis produced higher I-V values which suggest that the vertical and horizantal conductance mechanisms appear to be different. Ge top-layered samples gained greater crystalline structure and better surface conductivity where LBLA resulted in the formation of Ge nucleation and tight 2D stacking resulting in enhanced current values.

Effects of the F₄TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors.

PubMed

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-13

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Microfabrication of a High-Throughput Nanochannel Delivery/Filtration System

NASA Technical Reports Server (NTRS)

Ferrari, Mauro; Liu, Xuewu; Grattoni, Alessandro; Fine, Daniel; Hosali, Sharath; Goodall, Randi; Medema, Ryan; Hudson, Lee

2011-01-01

A microfabrication process is proposed to produce a nanopore membrane for continuous passive drug release to maintain constant drug concentrations in the patient s blood throughout the delivery period. Based on silicon microfabrication technology, the dimensions of the nanochannel area, as well as microchannel area, can be precisely controlled, thus providing a steady, constant drug release rate within an extended time period. The multilayered nanochannel structures extend the limit of release rate range of a single-layer nanochannel system, and allow a wide range of pre-defined porosity to achieve any arbitrary drug release rate using any preferred nanochannel size. This membrane system could also be applied to molecular filtration or isolation. In this case, the nanochannel length can be reduced to the nanofabrication limit, i.e., 10s of nm. The nanochannel delivery system membrane is composed of a sandwich of a thin top layer, the horizontal nanochannels, and a thicker bottom wafer. The thin top layer houses an array of microchannels that offers the inlet port for diffusing molecules. It also works as a lid for the nanochannels by providing the channels a top surface. The nanochannels are fabricated by a sacrificial layer technique that obtains smooth surfaces and precisely controlled dimensions. The structure of this nanopore membrane is optimized to yield high mechanical strength and high throughput.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Disposable sludge dewatering container and method

DOEpatents

Cole, Clifford M.

1993-01-01

A device and method for preparing sludge for disposal comprising a box with a thin layer of gravel on the bottom and a thin layer of sand on the gravel layer, an array of perforated piping deployed throughout the gravel layer, and a sump in the gravel layer below the perforated piping array. Standpipes connect the array and sump to an external ion exchanger/fine particulate filter and a pump. Sludge is deposited on the sand layer and dewatered using a pump connected to the piping array, topping up with more sludge as the aqueous component of the sludge is extracted. When the box is full and the free standing water content of the sludge is acceptable, the standpipes are cut and sealed and the lid secured to the box.

All 2D, high mobility, flexible, transparent thin film transistor

DOEpatents

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

2017-01-17

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Apparatus and method for transient thermal infrared emission spectrometry

DOEpatents

McClelland, John F.; Jones, Roger W.

1991-12-24

A method and apparatus for enabling analysis of a solid material (16, 42) by applying energy from an energy source (20, 70) top a surface region of the solid material sufficient to cause transient heating in a thin surface layer portion of the solid material (16, 42) so as to enable transient thermal emission of infrared radiation from the thin surface layer portion, and by detecting with a spectrometer/detector (28, 58) substantially only the transient thermal emission of infrared radiation from the thin surface layer portion of the solid material. The detected transient thermal emission of infrared radiation is sufficiently free of self-absorption by the solid material of emitted infrared radiation, so as to be indicative of characteristics relating to molecular composition of the solid material.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

NASA Astrophysics Data System (ADS)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

PubMed Central

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-01

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window. PMID:28787845

TUBEWALL: a passive solar thermo-siphoning, field-fabricated, water storage wall system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, F.; Hemker, P.

1980-01-01

The basic component of TUBEWALL is a water-filled thin-wall cylindrical tube with an insulating foam vertical partition insert that divides the inside of the tube into a thin collector water compartment (solar side) and a larger storage water compartment (room side). The two compartments are connected at the top and bottom by means of circulation holes in the foam partition. When the sun strikes the solar side of the tube, the thin layer of collector water is heated, thermosiphons through the top opening in the partition into the larger storage compartment on the room side, and is replaced with coolmore » water drawn from the bottom of the storage through the bottom hole in the partition. Night back-siphonage is prevented by a thin flap valve over the top circulation hole. The tubes may by used between wall studs having a low-cost fiberglass/tedlar double glazing. The tubes can be covered on the room side with drywall and heat transferred to the living space by indirect radiation, and either natural air convection through top and bottom vent slots or by fan. Alternatively, the tubes can be left exposed for direct radiation.« less

Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

DOE PAGES

Mauger, Scott A.; Glasser, Melodie P.; Tremolet de Villers, Bertrand J.; ...

2016-01-21

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-raymore » absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.« less

The role of thin MgO(100) epilayer for polarized charge injection into top-emitting OLED

NASA Astrophysics Data System (ADS)

Kim, Tae Hee; Jong Lee, Nyun; Bae, Yu Jeong; Cho, Hyunduck; Lee, Changhee; Ito, Eisuke

2012-02-01

A new top-emitting OLED (TOLED) structure, which is formed on an Si(100) substrate and an epitaxial MgO(100)/Fe(100)/MgO(100) bottom electrode, was investigated. Our TOLED design included a semi-transparent cathode Al, a stack of conventional organic electroluminescent layers (α-NPD/Alq3/LiF) and a thin Cu-Phthalocyanine (CuPc) film to enhance the hole injection into the luminescent layers. At room temperature (RT), magnetoluminescence of ˜5 % was observed in low magnetic field up to 1 Tesla , which is obviously larger than that of the OLEDs with epitaxial and polycrystalline Fe anodes without MgO(100) covering layer. Our results indicate that the magnetic field effect on the electroluminescence could be strongly related to the magnetic properties of bottom electrode, more precisely the interfacial properties between CuPc layer and the anode. Therefore, we focused on understanding interface electronic states and energy alignment by using x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. Our results showed that the use of appropriate oxide layers could represent a new interface engineering technique for improving reliability and functionality in organic semiconductor devices.

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Phase-resolved reflectance spectroscopy on layered turbid media

NASA Astrophysics Data System (ADS)

Hielscher, Andreas H.; Liu, Hanli; Chance, Britton; Tittel, Frank K.; Jacques, Steven L.

1995-05-01

In this study, we investigate the influence of layered tissue structures on the phase-resolved reflectance. As a particular example, we consider the affect of the skin, skull, and meninges on noninvasive blood oxygenation determination of the brain. In this case, it's important to know how accurate one can measure the absorption coefficient of the brain through the enclosing layers of different tissues. Experiments were performed on layered gelatin tissue phantoms and the results compared to diffusion theory. It is shown that when a high absorbing medium is placed on top of a low absorbing medium, the absorption coefficient of the lower layer is accessible. In the inverse case, where a low absorbing medium is placed on top of a high absorbing medium, the absorption coefficient of the underlying medium can only be determined if the differences in the absorption coefficient are small, or the top layer is very thin. Investigations on almost absorption and scattering free layers, like the cerebral fluid filled arachnoid, reveal that the determination of the absorption coefficient is barely affected by these kinds of structures.

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Leaping shampoo glides on a 500-nm-thick lubricating air layer

NASA Astrophysics Data System (ADS)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Climatology and Formation of Tropical Midlevel Clouds at the Darwin ARM Site

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riihimaki, Laura D.; McFarlane, Sally A.; Comstock, Jennifer M.

A 4-yr climatology of midlevel clouds is presented from vertically pointing cloud lidar and radar measurements at the Atmospheric Radiation Measurement Program (ARM) site at Darwin, Australia. Few studies exist of tropical midlevel clouds using a dataset of this length. Seventy percent of clouds with top heights between 4 and 8 km are less than 2 km thick. These thin layer clouds have a peak in cloud-top temperature around the melting level (0°C) and also a second peak around -12.5°C. The diurnal frequency of thin clouds is highest during the night and reaches a minimum around noon, consistent with variationmore » caused by solar heating. Using a 1.5-yr subset of the observations, the authors found that thin clouds have a high probability of containing supercooled liquid water at low temperatures: ~20% of clouds at -30°C, ~50% of clouds at -20°C, and ~65% of clouds at -10°C contain supercooled liquid water. The authors hypothesize that thin midlevel clouds formed at the melting level are formed differently during active and break monsoon periods and test this over three monsoon seasons. A greater frequency of thin midlevel clouds are likely formed by increased condensation following the latent cooling of melting during active monsoon periods when stratiform precipitation is most frequent. This is supported by the high percentage (65%) of midlevel clouds with preceding stratiform precipitation and the high frequency of stable layers slightly warmer than 0°C. In the break monsoon, a distinct peak in the frequency of stable layers at 0°C matches the peak in thin midlevel cloudiness, consistent with detrainment from convection.« less

Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air- oxidized samples. However, peak intensity variations were observed due to interface interdiffusion.

Shallow structure and stratigraphy of the carbonate West Florida continental slope and their implications to sedimentation and geohazards

USGS Publications Warehouse

Doyle, Larry J.

1983-01-01

An 1800-joule sparker survey of the West Florida continental slope between about 26?N and 29?15?N showed a top bed of Pleistocene age forming an irregular drape over a surface that is probably Pliocene. The contact between the top two layers is unconformable in the south and, in some places, shows karst collapse and solution features. Karst topography grades into a more hummocky erosional surface to the north, which in turn smoothes out; the contact become conformable still further north. A period of folding, which is widespread over the outer portion of the study area and which may be related to large scale mass wasting, occurred at about the same time represented by the unconformity. Significant subsidence has occurred as late as Pleistocene. The surface layer thins to a minimum (0 in the south) at about 525-meters water depth and then thickens again dramatically to the west, downslope. This thinning is interpreted to be due to the Loop Current, which flows from north to south in the area and which acts to block deposition and scour the bottom. Despite the fact that the margin is dominated by carbonates, usually associated with low sedimentation rates, there is widespread evidence of mass wasting affecting ancient and surficial deposits on the outer part of the upper slope. Three potential groups of geohazards identified are: 1. Potential bottom failure in areas where a thin top layer overlies the karst surface. 2. Potential for sliding and slumping. 3. Scour due to currents which could also affect drilling and engineering activities.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

PubMed

Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

2012-07-01

In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Spirit Studies Rock Outcrop at Home Plate

NASA Image and Video Library

2006-03-06

This image shows two flat-topped, layered rocks with angular edges almost side by side, except they are separated by a smaller rock and two thin channels of reddish-brown sand. The bare rock surfaces are a light blue-gray

Confinement induced ordering in dewetting of ultra-thin polymer bilayers on nanopatterned substrates.

PubMed

Bhandaru, Nandini; Das, Anuja; Mukherjee, Rabibrata

2016-01-14

We report the dewetting of a thin bilayer of polystyrene (PS) and poly(methylmethacrylate) (PMMA) on a topographically patterned nonwettable substrate comprising an array of pillars, arranged in a square lattice. With a gradual increase in the concentration of the PMMA solution (Cn-PMMA), the morphology of the bottom layer changes to: (1) an aligned array of spin dewetted droplets arranged along substrate grooves at very low Cn-PMMA; (2) an interconnected network of threads surrounding each pillar at intermediate Cn-PMMA; and (3) a continuous bottom layer at higher Cn-PMMA. On the other hand the morphology of the PS top layer depends largely on the nature of the pre-existing bottom layer, in addition to Cn-PS. An ordered array of PMMA core-PS shell droplets forms right after spin coating when both Cn-PMMA and Cn-PS are very low. Bilayers with all other initial configurations evolve during thermal annealing, resulting in a variety of ordered structures. Unique morphologies realized include laterally coexisting structures of the two polymers confined within the substrate grooves due to initial rupture of the bottom layer on the substrate followed by a squeezing flow of the top layer; an array of core-shell and single polymer droplets arranged in an alternating order etc., to highlight a few. Such structures cannot be fabricated by any stand-alone lithography technique. On the other hand, in some cases the partially dewetted bottom layer imparts stability to an intact top PS layer against dewetting. Apart from ordering, under certain specific conditions significant miniaturization and downsizing of dewetted feature periodicity and dimension as compared to dewetting of a single layer on a flat substrate is observed. With the help of a morphology phase diagram we show that ordering is achieved over a wide combination of Cn-PMMA and Cn-PS, though the morphology and dewetting pathway differs significantly with variation in the thickness of the individual layers.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

NASA Astrophysics Data System (ADS)

Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

2018-03-01

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

Effects of top-dressing recycled broiler litter on litter production, litter characteristics, and nitrogen mass balance.

PubMed

Coufal, C D; Chavez, C; Niemeyer, P R; Carey, J B

2006-03-01

Top-dressing is a method of broiler litter management in which a thin layer of new, clean litter material is spread over the top of previously used litter prior to placement of a new flock. This fresh layer of bedding material increases the absorptive capacity of the litter and decreases litter caking. Although this practice has been widely used in the poultry industry for many years, no research has been conducted to quantify the effects the practice has on broiler performance, litter production rates, and nutrient content, or the ability of broiler litter to retain manure N and prevent volatilization. An experiment was conducted to quantify these parameters under simulated commercial conditions in a research facility. Nine consecutive flocks of broilers were reared on recycled broiler litter that had previously been used for 9 flocks. Control pens received no litter treatment whereas top-dressed pens received a thin layer of new rice hulls (1 to 2 cm) before the placement of each flock. Nitrogen loss was calculated using the mass balance method. Average broiler performance was not different between the top-dressed and control pens. Top-dressing of litter significantly (P < 0.05) reduced caked litter production compared with control pens in 6 of 9 flocks. However, average total litter production over all 9 flocks was not different between the 2 litter management strategies. In all flocks, litter N content was significantly reduced in top-dressed pens compared with control pens. As a result, litter C:N ratios were significantly higher for pens with top-dressed litter. Differences in N loss between the treatments were not consistent. Average N loss for all flocks was 10.61 and 11.92 g of N/kg of marketed broiler for control and top-dressed pens, respectively, or 20.1 and 22.5% of N inputs, respectively. Based on this experiment, top-dressing of recycled broiler litter would not be recommended as a strategy to reduce the volatilization of N from broiler rearing facilities and, in fact, may actually increase N loss.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

NASA Astrophysics Data System (ADS)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

NASA Astrophysics Data System (ADS)

Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

2017-09-01

For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers

NASA Astrophysics Data System (ADS)

Wang, J.; Sannomiya, T.; Shi, J.; Nakamura, Y.

2012-04-01

The effect of interface roughness on magnetic properties of exchange coupled polycrystalline Co/CoO(tAF)/Co trilayers has been investigated by varying antiferromagnetic layer (CoO) thickness. It has been found that the upper CoO/Co interface becomes rougher with increasing CoO layer thickness, resulting in stronger exchange bias of the upper interface than the lower one. The interfacial exchange coupling is strengthened by the increase of defect-generated uncompensated antiferromagnetic spins; such spins form coupling with spins in the Co layer at the interface. As a result, the CoO layer thickness dependence of exchange bias is much enhanced for the upper Co layer. The transition from anisotropic magnetoresistance to isotropic magnetoresistance for the top Co layer has also been found. This could be attributed to the defects, probably partial thin oxide layers, between Co grains in the top Co layer that leads a switch from spin-orbit scattering related magnetoresistance to spin-dependent electron scattering dominated magnetoresistance.

Influence of patterning the TCO layer on the series resistance of thin film HIT solar cells

NASA Astrophysics Data System (ADS)

Champory, Romain; Mandorlo, Fabien; Seassal, Christian; Fave, Alain

2017-01-01

Thin HIT solar cells combine efficient surface passivation and high open circuit voltage leading to high conversion efficiencies. They require a TCO layer in order to ease carriers transfer to the top surface fingers. This Transparent Conductive Oxide layer induces parasitic absorption in the low wavelength range of the solar spectrum that limits the maximum short circuit current. In case of thin film HIT solar cells, the front surface is patterned in order to increase the effective life time of photons in the active material, and the TCO layer is often deposited with a conformal way leading to additional material on the sidewalls of the patterns. In this article, we propose an alternative scheme with a local etching of both the TCO and the front a-Si:H layers in order to reduce the parasitic absorption. We study how the local resistivity of the TCO evolves as a function of the patterns, and demonstrate how the increase of the series resistance can be compensated in order to increase the conversion efficiency.

Monitoring plasma treatment of thin films by surface plasmon resonance

NASA Astrophysics Data System (ADS)

Laha, Ranjit; Manivannan, A.; Kasiviswanathan, S.

2014-03-01

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ˜20° after a plasma treatment of ˜7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Monitoring plasma treatment of thin films by surface plasmon resonance.

PubMed

Laha, Ranjit; Manivannan, A; Kasiviswanathan, S

2014-03-01

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ~20° after a plasma treatment of ~7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Wrinkle-Free Hydroforming of Wire Mesh

NASA Technical Reports Server (NTRS)

Fadness, J.

1986-01-01

Plastic films lubricate workpiece so it deforms smoothly. Thin layers of plastic below top die and above bottom die ensure wire screen slides as shaped by hydroforming. Plastic layers are 0.0043 in. (0.11 m) thick. Preformed to contours of dies and final workpiece. New method of hydroforming fine-wire-mesh heat-shield screens eliminates wrinkles and marks. Prevents screen from being damaged and pores from becoming blocked.

Vertical Carbon Nanotube Device in Nanoporous Templates

NASA Technical Reports Server (NTRS)

Sands, Timothy (Inventor); Fisher, Timothy Scott (Inventor); Bashir, Rashid (Inventor); Maschmann, Matthew Ralph (Inventor)

2014-01-01

A modified porous anodic alumina template (PAA) containing a thin CNT catalyst layer directly embedded into the pore walls. CNT synthesis using the template selectively catalyzes SWNTs and DWNTs from the embedded catalyst layer to the top PAA surface, creating a vertical CNT channel within the pores. Subsequent processing allows for easy contact metallization and adaptable functionalization of the CNTs and template for a myriad of applications.

Investigation of the superconducting proximity effect (SPE) and magnetic dead layers (MDL) in thin film double layers

NASA Astrophysics Data System (ADS)

Tateishi, Go

When a thin superconducting film (S film) is condensed onto a thin normal conducting film (N film), the first layers of the S film loose their superconductivity. This phenomenon is generally called the "superconducting proximity effect (SPE)". As an investigation of SPE we focus on the transition temperature of extremely thin NS double layers in the thin regime. Normal metal is condensed on top of insulating Sb, then Pb is deposited on it in small steps. The transition temperature is plotted in an inverse Tc-reduction 1/Delta T c =1/(Ts - Tc) versus Pb thickness graph. To compare our experimental results with the theoretical prediction, a numerical calculation of the SN double layer is performed by our group using the linear gap equation. As a result, there are large discrepancies between the experimental and theoretical results generally. The results of the NS double layers can be divided into three groups in terms of their discrepancies between experiment and theory.(1) Non-coupling (Tc = 0 K): N= Mg, Ag, Cu, Au. There are large deviations between experiment and theory by a factor to the order of 2.5. (2) Weak coupling (Tc is low (< 2.5 K)) : N=Cd, Zn, Al. Deviation is present, but only by a factor of 1.5. (3) Intermediate coupling (T c is around half of Pb's (≈ 4.5 K)) : N=In, Sn. The experimental results agree with the theory. Next, we examine the detection of the magnetic dead layer (MDL) of Ni thin films in terms of the anomalous Hall effect (AHE) with several non-magnetic metal substrates. In our results, when Ni film is contact with a polyvalent metal substrate film, the sandwich film has around 2 to 3.5 at.lay. of magnetic dead layers. However we have not observed the magnetic dead Ni layers with the alkali and noble metal substrate film. Finally, we revisit the Pb/Ni system to measure the magnetic scattering of Ni with the method of Weak Localization (WL) to compare with the dephasing rate due to the Tc-reduction. In this series, we use only very thin Pb films between 1.3 and 5 at.lay. deposited on top of the Ag substrate with about 37 at.lay. thickness, because we make the Ag substrate suppress the superconductivity of the extremely thin Pb film with the SPE and avoid the Azlamazov-Larkin fluctuations. After comparison, it becomes clear that the dephasing rate from the Tc-reduction method is much larger than that measured by the weak localization (the factor is around 120). We consider not only "pair breaking" but also "pair weakening", and conclude that the reduction of the superconducting transition temperature is not due to dephasing by magnetic scattering but due to the resonance scattering of Cooper pairs by non-magnetic d-states.

A two-layer structured PbI2 thin film for efficient planar perovskite solar cells.

PubMed

Ying, Chao; Shi, Chengwu; Wu, Ni; Zhang, Jincheng; Wang, Mao

2015-07-28

In this paper, a two-layer structured PbI2 thin film was constructed by the spin-coating procedure using a 0.80 M PbI2 solution in DMF and subsequent close-spaced vacuum thermal evaporation using PbI2 powder as a source. The bottom PbI2 thin film was compact with a sheet-like appearance, parallel to the FTO substrate, and can be easily converted to a compact perovskite thin film to suppress the charge recombination of the electrons of the TiO2 conduction band and the holes of the spiro-OMeTAD valence band. The top PbI2 thin film was porous with nano-sheet arrays, perpendicular to the FTO substrate, and can be easily converted to a porous perovskite thin film to improve the hole migration from the perovskite to spiro-OMeTAD and the charge separation at the perovskite/spiro-OMeTAD interface. The planar perovskite solar cells based on the two-layer structured PbI2 thin film exhibited a photoelectric conversion efficiency of 11.64%, along with an open-circuit voltage of 0.90 V, a short-circuit photocurrent density of 19.29 mA cm(-2) and a fill factor of 0.67.

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Kimi, Young Soon; Yang, O-Bong; Shin, Hyung-Shik

2011-04-01

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

Method of fabrication of electrodes and electrolytes

DOEpatents

Jankowski, Alan F.; Morse, Jeffrey D.

2004-01-06

Fuel cell stacks contain an electrolyte layer surrounded on top and bottom by an electrode layer. Porous electrodes are prepared which enable fuel and oxidant to easily flow to the respective electrode-electrolyte interface without the need for high temperatures or pressures to assist the flow. Rigid, inert microspheres in combination with thin-film metal deposition techniques are used to fabricate porous anodes, cathodes, and electrolytes. Microshperes contained in a liquid are randomly dispersed onto a host structure and dried such that the microsperes remain in position. A thin-film deposition technique is subsequently employed to deposit a metal layer onto the microsperes. After such metal layer deposition, the microspheres are removed leaving voids, i.e. pores, in the metal layer, thus forming a porous electrode. Successive repetitions of the fabrication process result in the formation of a continuous fuel cell stack. Such stacks may produce power outputs ranging from about 0.1 Watt to about 50 Watts.

Equatorial magnetic Rossby waves — evidence for a thin, strongly-buoyant stratified layer in earth's core

NASA Astrophysics Data System (ADS)

Knezek, Nicholas; Buffett, Bruce

2017-04-01

A low density stratified layer at the top of Earth's core has been proposed by many authors on the basis of chemical and thermodynamic arguments and has implications for Earth's thermal history, core energetics, and core-mantle interactions. Past studies claiming to detect a layer using perturbations in seismic wave speeds are contentious due to the extremely small magnitude of the detected signal. Recently, several studies have instead argued for the existence of a stratified layer by hypothesizing that oscillations in the observed geomagnetic field arise from waves propagating in the layer. In particular, 60 year oscillations in dipole strength have been attributed to global MAC waves, and 8 year oscillations of secular acceleration have been attributed to equatorially-trapped waves. We use a new hybrid finite-volume and Fourier numerical method we developed to model magnetohydrodynamic waves in a thin layer and show that a thin, strongly buoyant layer can produce equatorially-trapped waves with similar structures and periods to the observed 8 year signal. Using these simulated wave structures, we provide additional evidence for the existence of several propagating wave modes and place constraints on estimates for the wave periods, stratified layer thickness, and strength of buoyancy within the layer.

Improvement of resist profile roughness in bilayer resist process

NASA Astrophysics Data System (ADS)

Jeong, Chang-Young; Ryu, Sang-Wook; Park, Ki-Yeop; Lee, Won-Kyu; Lee, Seung-Woog; Lee, Dai-Hoon

2000-06-01

The bi-layer resist (BLR) process, which first accomplish imaging on a thin top layer and transfer it down to a thick organic layer, is one of newly emerging patterning techniques in silicon processing. In this work, we studied the lithographic performance of the BLR process adopting FK- SPTM (Fujifilm Olin Co.) as top layer material and various organic material as bottom layer. Generally, considerable advantages of planarization, reduced substrate reflection, improved process latitude, and of enhanced resolution are achieved. However, the resolution and the process latitude are highly affected by surface interaction between the top resist and the bottom material. Moreover, the BLR process has a sidewall roughness problem related to the material factors of the resist and the degraded aerial image contrast, which can affect the reliability of the device. We found that thermal curing treatment applied after development with the consideration of the glass transition temperature are very effective in reducing the line edge roughness. More smooth and steep patterning is achieved by the thermal treatment. The linewidth controllability is below 10 nm and the k1 value is reduced from 0.5 down to 0.32 in this process. The reactive ion etching adopting O2 gas demonstrated selectivity of the top resist over bottom material more than 15:1, together with residue-free and vertical wall profile.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun

2016-12-01

For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3/SrRuO 3/SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficientmore » of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.« less

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

PubMed Central

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-01-01

For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling. PMID:27929103

Millimeter-wave monolithic diode-grid frequency multiplier

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Orientation Control in Thin Films of a High-χ Block Copolymer with a Surface Active Embedded Neutral Layer.

PubMed

Zhang, Jieqian; Clark, Michael B; Wu, Chunyi; Li, Mingqi; Trefonas, Peter; Hustad, Phillip D

2016-01-13

Directed self-assembly (DSA) of block copolymers (BCPs) is an attractive advanced patterning technology being considered for future integrated circuit manufacturing. By controlling interfacial interactions, self-assembled microdomains in thin films of polystyrene-block-poly(methyl methacrylate), PS-b-PMMA, can be oriented perpendicular to surfaces to form line/space or hole patterns. However, its relatively weak Flory interaction parameter, χ, limits its capability to pattern sub-10 nm features. Many BCPs with higher interaction parameters are capable of forming smaller features, but these "high-χ" BCPs typically have an imbalance in surface energy between the respective blocks that make it difficult to achieve the required perpendicular orientation. To address this challenge, we devised a polymeric surface active additive mixed into the BCP solution, referred to as an embedded neutral layer (ENL), which segregates to the top of the BCP film during casting and annealing and balances the surface tensions at the top of the thin film. The additive comprises a second BCP with a "neutral block" designed to provide matched surface tensions with the respective polymers of the main BCP and a "surface anchoring block" with very low surface energy that drives the material to the air interface during spin-casting and annealing. The surface anchoring block allows the film to be annealed above the glass transition temperature of the two materials without intermixing of the two components. DSA was also demonstrated with this embedded neutral top layer formulation on a chemical patterned template using a single step coat and simple thermal annealing. This ENL technology holds promise to enable the use of high-χ BCPs in advanced patterning applications.

Improved performance of Mg-Y alloy thin film switchable mirrors after coating with a superhydrophobic surface

NASA Astrophysics Data System (ADS)

La, Mao; Zhou, Huaijuan; Li, Ning; Xin, Yunchuan; Sha, Ren; Bao, Shanhu; Jin, Ping

2017-05-01

The magnesium based switchable mirrors can reversibly change their optical properties between the transparent and the reflective state as a result of hydrogenation and dehydrogenation. These films can potentially be applied as new energy-saving windows, by controlling the transmittance of solar radiation through the regulation of their reflective state. In this study, magnesium-yttrium (Mg-Y) alloy thin films were prepared using a DC magnetron sputtering method. However, the luminous transmittance in the transparent state and the switching durability of switchable mirrors are too poor to satisfy practical demands. In order to improve the films switching durability, luminous transmittance and the surface functionalization, polytetrafluoroethylene (PTFE) was coated with thermal vacuum deposition for use as the top layer of Mg-Y/Pd switchable mirrors. The PTFE layer had a porous network structure and exhibited a superhydrophobic surface with a water contact angle of approximately 152°. By characterization, PTFE thin films shows the excellent protection role against the oxidization of Mg, the switching durability of the films were improved 3 times, and also shows the antireflection role the luminous transmission of films was enhanced by 7% through the top covered with PTFE.

Controlling the crack formation in inkjet-printed silver nanoparticle thin-films for high resolution patterning using intense pulsed light treatment

NASA Astrophysics Data System (ADS)

Gokhale, Pritesh; Mitra, Dana; Sowade, Enrico; Yoti Mitra, Kalyan; Leonel Gomes, Henrique; Ramon, Eloi; Al-Hamry, Ammar; Kanoun, Olfa; Baumann, Reinhard R.

2017-12-01

During the last years, intense pulsed light (IPL) processing has been employed and studied intensively for the drying and sintering of metal nanoparticle layers deposited by means of printing methods on flexible polymer substrates. IPL was found to be a very fast and substrate-gentle approach qualified for the field of flexible and large-area printed electronics, i.e. manufactured via roll-to-roll processing. In this contribution, IPL is used for the fine-patterning of printed silver nanoparticle layers. The patterning is obtained by induced and controlled crack formation in the thin silver layer due to the intense exposure of IPL. The crack formation is controlled by selection of the substrate material, the fine-tuning of the morphology of the silver layer and an application of a dielectric layer on top of the silver layer that acts as a stress concentrator. Careful optimization of the IPL parameters allowed to adjust the lateral width of the crack. This novel approach turned out to be a fast and reproducible high-resolution patterning process for multiple applications, e.g. to pattern the source-drain electrodes for all-inkjet-printed thin-film transistors.

TiO2 as diffusion barrier at Co/Alq3 interface studied by x-ray standing wave technique

NASA Astrophysics Data System (ADS)

Phatak Londhe, Vaishali; Gupta, A.; Ponpandian, N.; Kumar, D.; Reddy, V. R.

2018-06-01

Nano-scale diffusion at the interfaces in organic spin valve thin films plays a vital role in controlling the performance of magneto-electronic devices. In the present work, it is shown that a thin layer of titanium dioxide at the interface of Co/Alq3 can act as a good diffusion barrier. The buried interfaces of Co/Alq3/Co organic spin valve thin film has been studied using x-ray standing waves technique. A planar waveguide is formed with Alq3 layer forming the cavity and Co layers as the walls of the waveguide. Precise information about diffusion of Co into Alq3 is obtained through excitation of the waveguide modes. It is found that the top Co layer diffuses deep into the Alq3 resulting in incorporation of 3.1% Co in the Alq3 layer. Insertion of a 1.7 nm thick barrier layer of TiO2 at Co/Alq3 interface results in a drastic reduction in the diffusion of Co into Alq3 to a value of only 0.4%. This suggests a better performance of organic spin valve with diffusion barrier of TiO2.

Nanosphere lithography applied to magnetic thin films

NASA Astrophysics Data System (ADS)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Effect of La2O3 addition on interface chemistry between 4YSZ top layer and Ni based alloy bond coat in thermal barrier coating by EB PVD.

PubMed

Park, Chan-Young; Yang, Young-Hwan; Kim, Seong-Won; Lee, Sung-Min; Kim, Hyung-Tae; Jang, Byung-Koog; Lim, Dae-Soon; Oh, Yoon-Suk

2014-11-01

The effect of a 5 mol% La2O3 addition on the forming behavior and compositional variation at interface between a 4 mol% Yttria (Y2O3) stabilized ZrO2 (4YSZ) top coat and bond coat (NiCrAlY) as a thermal barrier coating (TBC) has been investigated. Top coats were deposited by electron beam physical vapor deposition (EB PVD) onto a super alloy (Ni-Cr-Co-Al) substrate without pre-oxidation of the bond coat. Top coats are found to consist of dense columnar grains with a thin interdiffusion layer between metallic bond coats. In the as-received 4YSZ coating, a thin interdiffusion zone at the interface between the top and bond coats was found to consist of a Ni-Zr intermetallic compound with a reduced quantity of Y, Al or O elements. On the other hand, in the case of an interdiffusion area of 5 mol% La2O3-added 4YSZ coating, it was found that the complicated composition and structure with La-added YSZ and Ni-Al rich compounds separately. The thermal conductivity of 5 mol% La2O3-added 4YSZ coating (- 1.6 W/m x k at 1100 degrees C) was lower than a 4YSZ coating (- 3.2 W/m x k at 1100 degrees C) alone.

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes

PubMed Central

Tae Lim, Jong; Lee, Hyunkoo; Cho, Hyunsu; Kwon, Byoung-Hwa; Sung Cho, Nam; Kuk Lee, Bong; Park, Jonghyurk; Kim, Jaesu; Han, Jun-Han; Yang, Jong-Heon; Yu, Byoung-Gon; Hwang, Chi-Sun; Chu Lim, Seong; Lee, Jeong-Ik

2015-01-01

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices. PMID:26626439

Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses

NASA Astrophysics Data System (ADS)

Qu, Yunxiu; Yang, Jia; Li, Yunpeng; Zhang, Jiawei; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-07-01

Bottom gated thin-film transistors (TFTs) with various sputtered SnO active layer thicknesses ranging from 10 to 30 nm and different passivation layers have been investigated. The device with 20 nm SnO showed the highest on/off ratio of 1.7 × 104 and the smallest subthreshold swing of 8.43 V dec‑1, and the mobility (0.76 cm2 V‑1 s‑1) was only slightly lower than in TFTs with a thicker SnO layer. However, both the mobility and the on/off ratio of the 15 nm SnO TFT dropped significantly by one order of magnitude. This indicated a strong influence of the top surface on the carrier transport, and we thus applied an organic or an inorganic encapsulation material to passivate the top surface. In the 20 nm TFT, the on/off ratio was doubled after passivation. The performance of the 15 nm TFT was improved even more dramatically with the on/off ratio increased by one order of magnitude and the mobility increased also significantly. Our experiment shows that polymethyl methacrylate passivation is more effective to reduce the shallow trap states, and Al2O3 is more effective in reducing the deep traps in the SnO channel.

Microfluidic channel fabrication method

DOEpatents

Arnold, Don W.; Schoeniger, Joseph S.; Cardinale, Gregory F.

2001-01-01

A new channel structure for microfluidic systems and process for fabricating this structure. In contrast to the conventional practice of fabricating fluid channels as trenches or grooves in a substrate, fluid channels are fabricated as thin walled raised structures on a substrate. Microfluidic devices produced in accordance with the invention are a hybrid assembly generally consisting of three layers: 1) a substrate that can or cannot be an electrical insulator; 2) a middle layer, that is an electrically conducting material and preferably silicon, forms the channel walls whose height defines the channel height, joined to and extending from the substrate; and 3) a top layer, joined to the top of the channels, that forms a cover for the channels. The channels can be defined by photolithographic techniques and are produced by etching away the material around the channel walls.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

NASA Astrophysics Data System (ADS)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recoverymore » in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.« less

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

NASA Astrophysics Data System (ADS)

Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

Flexible top-emitting OLEDs for lighting: bending limits

NASA Astrophysics Data System (ADS)

Schwamb, Philipp; Reusch, Thilo C.; Brabec, Christoph J.

2013-09-01

Flexible OLED light sources have great appeal due to new design options, being unbreakable and their low weight. Top-emitting OLED device architectures offer the broadest choice of substrate materials including metals which are robust, impermeable to humidity, and good thermal conductors making them promising candidates for flexible OLED device substrates. In this study, we investigate the bending limits of flexible top-emitting OLED lighting devices with transparent metal electrode and thin film encapsulation on a variety of both metal and plastic foils. The samples were subjected to concave and convex bending and inspected by different testing methods for the onset of breakdown for example visible defects and encapsulation failures. The critical failure modes were identified as rupture of the transparent thin metal top electrode and encapsulation for convex bending and buckling of the transparent metal top electrode for concave bending. We investigated influences from substrate material and thickness and top coating thickness. The substrate thickness is found to dominate bending limits as expected by neutral layer modeling. Coating shows strong improvements for all substrates. Bending radii <15mm are achieved for both convex and concave testing without damage to devices including their encapsulation.

Thin-film chemical sensors based on electron tunneling

NASA Technical Reports Server (NTRS)

Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

1985-01-01

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Ceramic membrane by tape casting and sol-gel coating for microfiltration and ultrafiltration application

NASA Astrophysics Data System (ADS)

Das, Nandini; Maiti, H. S.

2009-11-01

Alumina membrane filters in the form of thin (0.3-0.8 mm) discs of 25-30 mm diameter suitable for microfiltration application have been fabricated by tape-casting technique. Further using this microfiltration membrane as substrate, boehmite sol coating was applied on it and ultrafiltration membrane with very small thickness was formed. The pore size of the microfiltration membrane could be varied in the range of 0.1-0.7 μm through optimisation of experimental parameter. In addition, each membrane shows a very narrow pore size distribution. The most important factor, which determines the pore size of the membrane, is the initial particle size and its distribution of the ceramic powder. The top thin ultrafiltration, boehmite layer was prepared by sol-gel method, with a thickness of 0.5 μm. Particle size of the sol was approximately 30-40 nm. The structure and formation of the layer was analysed through TEM. At 550 °C formation of the top layer was completed. The pore size of the ultrafiltration membrane measured from TEM micrograph was almost 10 nm. Results of microbial (Escherichia coli—smallest-sized water-borne bacteria) test confirm the possibility of separation through this membrane

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Qi; Cai, Jing; Li, Yun; Shi, Yi; Wang, Xizhang; Hu, Zheng

2014-06-01

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from -20.4 V to -0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

NASA Astrophysics Data System (ADS)

Enriquez, Erik; Zhang, Yingying; Chen, Aiping; Bi, Zhenxing; Wang, Yongqiang; Fu, Engang; Harrell, Zachary; Lü, Xujie; Dowden, Paul; Wang, Haiyan; Chen, Chonglin; Jia, Quanxi

2016-08-01

Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1-1 mΩ.cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. The growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.

Top-Contact Pentacene-Based Organic Thin Film Transistor (OTFT) with N, N'-Bis(3-Methyl Phenyl)- N, N'-Diphenyl Benzidine (TPD)/Au Bilayer Source-Drain Electrode

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2018-01-01

A top-contact Pentacene-based organic thin film transistor (OTFT) with N, N'-Bis (3-methyl phenyl)- N, N'-diphenyl benzidine (TPD)/Au bilayer source-drain electrode is reported. The devices with TPD/Au bilayer source-drain (S-D) electrodes show better performance than the single layer S-D electrode OTFT devices. The field-effect mobility of 4.13 cm2 v-1 s-1, the on-off ratio of 1.86 × 107, the threshold voltage of -4 v and the subthreshold slope of .27 v/decade, respectively, are obtained from the device with a TPD/Au bilayer source-drain electrode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakhri, M.; Theisen, M.; Behrendt, A.

Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices withmore » encapsulation.« less

A flexible top-emitting organic light-emitting diode on steel foil

NASA Astrophysics Data System (ADS)

Xie, Zhiyuan; Hung, Liang-Sun; Zhu, Furong

2003-11-01

An efficient flexible top-emitting organic light-emitting diode (FTOLED) was developed on a thin steel foil. The FTOLED was constructed on the spin-on-glass (SOG)-coated steel substrate with an organic stack of NPB/Alq 3 sandwiched by a highly reflective Ag anode and a semitransparent Sm cathode. An ultrathin plasma-polymerized hydrocarbon film (CF X) was interposed between the Ag anode and the NPB layer to enhance hole-injection, and an additional Alq 3 layer was overlaid on the Sm cathode to increase light output. The FTOLED showed a peak efficiency of 4.4 cd/A higher than 3.7 cd/A of a convention NPB/Alq 3-based bottom-emitting OLED.

Particle-based Nano-Antennas at the Vis-NIR regime

DTIC Science & Technology

2013-11-01

PSS (poly(3,4-ethylenedioxythiophene) :poly(styrene sulfonate) is then spin coated and dried at 110oC to form a 50nm buffer layer partially covering...dominant effect is that during the spin coating of the 50nm PEDOT buffer a residual very thin layer coated also the top 50nm part of the Au disks...antennas, capacitive versus conductive coupling, on-demand design (termed ‘popcorn’ antennas), broadband plasmonic metamaterials, and light

Perforation patterned electrical interconnects

DOEpatents

Frey, Jonathan

2014-01-28

This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Sustainable Process for the Preparation of High-Performance Thin-Film Composite Membranes using Ionic Liquids as the Reaction Medium.

PubMed

Mariën, Hanne; Bellings, Lotte; Hermans, Sanne; Vankelecom, Ivo F J

2016-05-23

A new form of interfacial polymerization to synthesize thin-film composite membranes realizes a more sustainable membrane preparation and improved nanofiltration performance. By introducing an ionic liquid (IL) as the organic reaction phase, the extremely different physicochemical properties to those of commonly used organic solvents influenced the top-layer formation in several beneficial ways. In addition to the elimination of hazardous solvents in the preparation, the m-phenylenediamine (MPD) concentration could be reduced 20-fold, and the use of surfactants and catalysts became redundant. Together with the more complete recycling of the organic phase in the water/IL system, these factors resulted in a 50 % decrease in the mass intensity of the top-layer formation. Moreover, a much thinner top layer with a high ethanol permeance of 0.61 L m(-2)  h(-1)  bar(-1) [99 % Rose Bengal (RB, 1017 Da) retention; 1 bar=0.1 MPa] was formed without the use of any additives. This EtOH permeance is 555 and 161 % higher than that for the conventional interfacial polymerization (without and with additives, respectively). In reverse osmosis, high NaCl retentions of 97 % could be obtained. Finally, the remarkable decrease in the membrane surface roughness indicates the potential for reduced fouling with this new type of membrane. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of composite thin films for applications in high density data storage

NASA Astrophysics Data System (ADS)

Yuan, Hua

Granular Co-alloy + oxide thin films are currently used as the magnetic recording layer of perpendicular media in hard disk drives. The microstructure of these films is composed mainly of fine (7--10 nm) magnetic grains physically surrounded by oxide phases, which produce magnetic isolation of the grains. As a result, the magnetic switching volume is maintained as small as the physical grain size. Consequently, ample number of magnetic switching units can be obtained in one recording bit, in other words, higher signal to noise ratios (SNR) can be achieved. Therefore, a good understanding and control of the microstructure of the films is very important for high areal density magnetic recording media. Interlayers and seedlayers play important roles in controlling the microstructure in terms of grain size, grain size distribution, oxide segregation and orientation dispersion of the crystallographic texture. Developing novel interlayers or seedlayers with smaller grain size is a key approach to produce smaller grain size in the recording layer. This study focuses on how to achieve smaller grain sizes in the recording layer through novel interlayer/seedlayer materials and processes. It also discusses the resulting microstructure in smaller-grain-size thin films. Metal + oxide (e.g. Ru + SiO2) composite thin films were chosen as interlayer and seedlayer materials due to their unique segregated microstructure. Such layers can be grown epitaxially on top of fcc metal seedlayers with good orientation. It can also provide an epitaxial growth template for the subsequent magnetic layer (recording layer). The metal and oxide phases in the composite thin films are immiscible. The final microstructure of the interlayer depends on factors, such as, sputtering pressure, oxide species, oxide volume fraction, thickness, alloy composition, temperature etc. Moreover, it has been found that the microstructure of the composite thin films is affected mostly by two important factors---oxide volume fraction and sputtering pressure. The latter affects grain size and grain segregation through surface-diffusion modification and the self-shadowing effect. The composite Ru + oxide interlayers were found to have various microstructures under various sputtering conditions. Four characteristic microstructure zones can be identified as a function of oxide volume fraction and sputtering pressure---"percolated" (A), "maze" (T), "granular" (B) and "embedded" (C), based on which, a new structural zone model (SZM) is established for composite thin films. The granular microstructure of zone B is of particular interest for recording media application. The grain size of interlayers is a strong function of pressure, oxide species and oxide volume fraction. Magnetic layers grown on top of these interlayers were found to be significantly affected by the interlayer microstructure. One-to-one grain epitaxial growth is very difficult to achieve when the grain size is too small. As a result, the magnetic properties of smaller grain size magnetic layers deteriorate due to poor growth. This presents a huge challenge to high areal density magnetic recording media. A novel approach of Ar-ion etched Ru seedlayer, which can improve epitaxy between interlayer and magnetic layer is proposed. This method produces interlayer thin films of: (1) smaller grain size and higher nucleation density due to both a rougher seedlayer surface and an oxide addition in the interlayer; (2) good (00.2) texture due to the growth on top of the low pressure deposited Ru seedlayer; (3) dome-shape grain morphology due to the high pressure deposition. Therefore, a significant Ru grain size reduction with enhanced granular morphology and improved grain-to-grain epitaxy with the magnetic layer was achieved. High resolution transmission electron microscopy (TEM) techniques, such as, electron energy loss spectroscopy (EELS), energy-filtered TEM (EFTEM), energy-dispersive X-ray spectroscopy (EDS) and mapping, and high angle annular dark field (HAADF) imaging have been utilized to investigate elemental distribution and grain morphology in composite magnetic thin films of different grain sizes. An oxygen-rich grain shell of about 0.5 ˜ 1 nm thickness is often observed for most media with different grain sizes. Reducing the grain size increases surface to volume ratio. With more surface area, smaller grains are more vulnerable to oxidization, resulting in even greater influence of the oxide on the magnetic properties of the grains.

Field Effect Transistors Using Atomically Thin Layers of Copper Indium Selenide (CuInSe)

NASA Astrophysics Data System (ADS)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

We will report fabrication of field-effect transistors (FETs) using few-layers of Copper Indium Selenide (CuInSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Our transport measurements indicate n-type FET with electron mobility µ ~ 3 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. Mobility can be further increased significantly when ionic liquid 1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) is used as top gate. Similarly subthreshold swing can be further improved from 103 V/dec to 0.55 V/dec by using ionic liquid as a top gate. We also found ON/OFF ratio of ~ 102 for both top and back gate. Comparison between ionic liquid top gate and SiO2 back gate will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

NASA Astrophysics Data System (ADS)

Demchenko, Iraida N.; Lisowski, Wojciech; Syryanyy, Yevgen; Melikhov, Yevgen; Zaytseva, Iryna; Konstantynov, Pavlo; Chernyshova, Maryna; Cieplak, Marta Z.

2017-03-01

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Effect of substrates on the molecular orientation of silicon phthalocyanine dichloride thin films

NASA Astrophysics Data System (ADS)

Deng, Juzhi; Baba, Yuji; Sekiguchi, Tetsuhiro; Hirao, Norie; Honda, Mitsunori

2007-05-01

Molecular orientations of silicon phthalocyanine dichloride (SiPcCl2) thin films deposited on three different substrates have been measured by near-edge x-ray absorption fine structure (NEXAFS) spectroscopy using linearly polarized synchrotron radiation. The substrates investigated were highly oriented pyrolitic graphite (HOPG), polycrystalline gold and indium tin oxide (ITO). For thin films of about five monolayers, the polarization dependences of the Si K-edge NEXAFS spectra showed that the molecular planes of SiPcCl2 on three substrates were nearly parallel to the surface. Quantitative analyses of the polarization dependences revealed that the tilted angle on HOPG was only 2°, which is interpreted by the perfect flatness of the HOPG surface. On the other hand, the tilted angle on ITO was 26°. Atomic force microscopy (AFM) observation of the ITO surface showed that the periodicity of the horizontal roughness is of the order of a few nanometres, which is larger than the molecular size of SiPcCl2. It is concluded that the morphology of the top surface layer of the substrate affects the molecular orientation of SiPcCl2 molecules not only for mono-layered adsorbates but also for multi-layered thin films.

Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

NASA Astrophysics Data System (ADS)

Gułkowski, Sławomir; Krawczak, Ewelina

2017-10-01

Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

Properties of reactively sputtered AlxNy thin films for pyroelectric detectors

NASA Astrophysics Data System (ADS)

Calvano, Nicholas; Chrostoski, Philip; Voshell, Andrew; Braithwaite, Keesean; Rana, Mukti

2017-08-01

Uncooled infrared detectors are utilized in various radiometric devices and cameras because of their low cost, light weight and performance. A pyroelectric detector is a class of uncooled infrared detector whose polarization changes with change in temperature. Infrared radiation from objects falls on top of the sensing layer of the pyroelectric detector and the absorbed radiation causes the temperature of the sensing layer to change. This work describes the deposition and characterization of AlxNy thin films for using them as pyroelectric detector's sensing material. To test the sensitivity of infrared detection or pyroelectric effect of AlxNy thin films, capacitors of various sizes were fabricated. The diameter of the electrodes for capacitor used during testing of the device was 1100 μm while the distances between these two electrodes was 1100 μm. On a 3-inch diameter cleaned silicon wafer, 100 nm thick AlxNy thin films were deposited by radio frequency (RF) sputtering from an Al target in Ar: N2 environment. On top of this, a 100-nm thick Au layer was deposited and lifted off by using conventional photo lithography to form the electrodes of capacitors. All the layers were deposited by RF sputtering at room temperature. The thin film samples were annealed at 700 °C in N2 environment for 10 minutes. X-ray diffraction showed the films are poly-crystalline with peaks in (100), (002) and (101) directions. When the temperature varied between 303 K to 353 K, the pyroelectric coefficient was increased from 8.60 × 10-9 C/m2K to 3.76 × 10-8C/m2K with a room temperature pyroelectric coefficient value of 8.60×10-9C/m2K. The non-annealed films were found to be transparent between the wavelengths of 600 nm to 3000 nm. The refraction coefficient was found to be varied between 2.0 and 2.2 while the extinction coefficient was found to be zero. The optical bandgap determined using Tauc's equation was 1.65 eV.

Top electrode size effects in the piezoresponse force microscopy of piezoelectric thin films attached to a rigid substrate

NASA Astrophysics Data System (ADS)

Wang, J. H.

2017-10-01

In order to avoid the highly concentrated electric field induced beneath the sharp tip, the technique using a top coating electrode in the piezoresponse force microscopy (PFM) has been developed to detect the piezoelectric coefficients. Reliable theory should be erected to explain the broadly reported top electrode size effects and relate the responses with material constants. In this paper, the surface displacement, electric potential inside the film, electric charge and effective piezoelectric coefficient are expressed as a set of integral equations. Analytical solutions are obtained for two limiting cases, i.e., half space (HS) and infinitely thin film (IT). The effective piezoelectric coefficient of the HS case is proved to be the same as that from the PFM of a piezoelectric half plane without a top coating. For the IT case, it is identical to the well-known piezoelectric coefficient result of piezoelectric thin film clamped between flat rigid electrodes subject to homogeneous external electric field. For PZT4 thin layer, numerical results reveal that the surface displacement obviously decreases and the electric potential distributions inside the film become more and more homogeneous as the electrode radius to film thickness ratio (a/t) enlarges. The electric charge dramatically increases while the effective piezoelectric coefficient evidently decreases and they both transfer from the HS solutions to the IT results when a/t varies from 0.001 to 20. The transition occurs at about a/t = 1 in agreement with the experimental observations. A critical top electrode size, i.e., a/t > 10, is obtained and applicable to other piezoelectric materials. Under such circumstances, one can readily gain the piezoelectric coefficients e 33, d 33 and the dielectric coefficient {\\in }33 if other mechanical coefficients and one piezoelectric constant are known a prior.

A Survey of Solid-State Microwave Power Devices

DTIC Science & Technology

1977-04-29

from the channel by a thin oxide layer (insulated gate FET or IGFET), it may be a diffused junction at the top of the channel (junction FET or JFET...greater than 100 GHz. YIG-tuned units are finding increasing use as extremely stable sources, whereas varactor tuning is used where tuning speed is

Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Shinichi; Yamada, Tomoaki; Takahashi, Kenji

2009-03-15

(Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) films were deposited on (111)Pt/TiO{sub 2}/SiO{sub 2}/Al{sub 2}O{sub 3} substrates by rf sputtering. By inserting a thin layer of SrRuO{sub 3} in between BST film and (111)Pt electrode, the BST films grew fully (111)-oriented without any other orientations. In addition, it enables us to reduce the growth temperature of BST films while keeping the dielectric constant and tunability as high as those of BST films directly deposited on Pt at higher temperatures. The dielectric loss of the films on SrRuO{sub 3}-top substrates was comparable to that on Pt-top substrates for the same level of dielectricmore » constant. The results suggest that the SrRuO{sub 3} thin layer on (111)Pt electrode is an effective approach to growing highly crystalline BST films with (111) orientation at lower deposition temperatures.« less

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

PubMed

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

Rapid Detection Methods for Asphalt Pavement Thicknesses and Defects by a Vehicle-Mounted Ground Penetrating Radar (GPR) System

PubMed Central

Dong, Zehua; Ye, Shengbo; Gao, Yunze; Fang, Guangyou; Zhang, Xiaojuan; Xue, Zhongjun; Zhang, Tao

2016-01-01

The thickness estimation of the top surface layer and surface layer, as well as the detection of road defects, are of great importance to the quality conditions of asphalt pavement. Although ground penetrating radar (GPR) methods have been widely used in non-destructive detection of pavements, the thickness estimation of the thin top surface layer is still a difficult problem due to the limitations of GPR resolution and the similar permittivity of asphalt sub-layers. Besides, the detection of some road defects, including inadequate compaction and delamination at interfaces, require further practical study. In this paper, a newly-developed vehicle-mounted GPR detection system is introduced. We used a horizontal high-pass filter and a modified layer localization method to extract the underground layers. Besides, according to lab experiments and simulation analysis, we proposed theoretical methods for detecting the degree of compaction and delamination at the interface, respectively. Moreover, a field test was carried out and the estimated results showed a satisfactory accuracy of the system and methods. PMID:27929409

Rapid Detection Methods for Asphalt Pavement Thicknesses and Defects by a Vehicle-Mounted Ground Penetrating Radar (GPR) System.

PubMed

Dong, Zehua; Ye, Shengbo; Gao, Yunze; Fang, Guangyou; Zhang, Xiaojuan; Xue, Zhongjun; Zhang, Tao

2016-12-06

The thickness estimation of the top surface layer and surface layer, as well as the detection of road defects, are of great importance to the quality conditions of asphalt pavement. Although ground penetrating radar (GPR) methods have been widely used in non-destructive detection of pavements, the thickness estimation of the thin top surface layer is still a difficult problem due to the limitations of GPR resolution and the similar permittivity of asphalt sub-layers. Besides, the detection of some road defects, including inadequate compaction and delamination at interfaces, require further practical study. In this paper, a newly-developed vehicle-mounted GPR detection system is introduced. We used a horizontal high-pass filter and a modified layer localization method to extract the underground layers. Besides, according to lab experiments and simulation analysis, we proposed theoretical methods for detecting the degree of compaction and delamination at the interface, respectively. Moreover, a field test was carried out and the estimated results showed a satisfactory accuracy of the system and methods.

Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

NASA Astrophysics Data System (ADS)

Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

2018-02-01

Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

Transfer matrix approach for the Kerr and Faraday rotation in layered nanostructures.

PubMed

Széchenyi, Gábor; Vigh, Máté; Kormányos, Andor; Cserti, József

2016-09-21

To study the optical rotation of the polarization of light incident on multilayer systems consisting of atomically thin conductors and dielectric multilayers we present a general method based on transfer matrices. The transfer matrix of the atomically thin conducting layer is obtained using the Maxwell equations. We derive expressions for the Kerr (Faraday) rotation angle and for the ellipticity of the reflected (transmitted) light as a function of the incident angle and polarization of the light. The method is demonstrated by calculating the Kerr (Faraday) angle for bilayer graphene in the quantum anomalous Hall state placed on the top of dielectric multilayers. The optical conductivity of the bilayer graphene is calculated in the framework of a four-band model.

Understanding Interfacial Alignment in Solution Coated Conjugated Polymer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qu, Ge; Zhao, Xikang; Newbloom, Gregory M.

Domain alignment in conjugated polymer thin films can significantly enhance charge carrier mobility. However, the alignment mechanism during meniscus-guided solution coating remains unclear. Furthermore, interfacial alignment has been rarely studied despite its direct relevance and critical importance to charge transport. In this study, we uncover a significantly higher degree of alignment at the top interface of solution coated thin films, using a donor–acceptor conjugated polymer, poly(diketopyrrolopyrrole-co-thiopheneco- thieno[3,2- b]thiophene-co-thiophene) (DPP2T-TT), as the model system. At the molecular level, we observe in-plane π–π stacking anisotropy of up to 4.8 near the top interface with the polymer backbone aligned parallel to the coatingmore » direction. The bulk of the film is only weakly aligned with the backbone oriented transverse to coating. At the mesoscale, we observe a well-defined fibril-like morphology at the top interface with the fibril long axis pointing toward the coating direction. Significantly smaller fibrils with poor orientational order are found on the bottom interface, weakly aligned orthogonal to the fibrils on the top interface. The high degree of alignment at the top interface leads to a charge transport anisotropy of up to 5.4 compared to an anisotropy close to 1 on the bottom interface. We attribute the formation of distinct interfacial morphology to the skin-layer formation associated with high Peclet number, which promotes crystallization on the top interface while suppressing it in the bulk. As a result, we further infer that the interfacial fibril alignment is driven by the extensional flow on the top interface arisen from increasing solvent evaporation rate closer to the meniscus front.« less

Understanding Interfacial Alignment in Solution Coated Conjugated Polymer Thin Films

DOE PAGES

Qu, Ge; Zhao, Xikang; Newbloom, Gregory M.; ...

2017-08-01

Domain alignment in conjugated polymer thin films can significantly enhance charge carrier mobility. However, the alignment mechanism during meniscus-guided solution coating remains unclear. Furthermore, interfacial alignment has been rarely studied despite its direct relevance and critical importance to charge transport. In this study, we uncover a significantly higher degree of alignment at the top interface of solution coated thin films, using a donor–acceptor conjugated polymer, poly(diketopyrrolopyrrole-co-thiopheneco- thieno[3,2- b]thiophene-co-thiophene) (DPP2T-TT), as the model system. At the molecular level, we observe in-plane π–π stacking anisotropy of up to 4.8 near the top interface with the polymer backbone aligned parallel to the coatingmore » direction. The bulk of the film is only weakly aligned with the backbone oriented transverse to coating. At the mesoscale, we observe a well-defined fibril-like morphology at the top interface with the fibril long axis pointing toward the coating direction. Significantly smaller fibrils with poor orientational order are found on the bottom interface, weakly aligned orthogonal to the fibrils on the top interface. The high degree of alignment at the top interface leads to a charge transport anisotropy of up to 5.4 compared to an anisotropy close to 1 on the bottom interface. We attribute the formation of distinct interfacial morphology to the skin-layer formation associated with high Peclet number, which promotes crystallization on the top interface while suppressing it in the bulk. As a result, we further infer that the interfacial fibril alignment is driven by the extensional flow on the top interface arisen from increasing solvent evaporation rate closer to the meniscus front.« less

Deposition of tetracene thin films on SiO2/Si substrates by rapid expansion of supercritical solutions using carbon dioxide

NASA Astrophysics Data System (ADS)

Fujii, Tatsuya; Takahashi, Yuta; Uchida, Hirohisa

2015-03-01

We report on a novel deposition technique of tetracene (naphthacene) thin films on SiO2/Si substrates by rapid expansion of supercritical solutions (RESS) using CO2. Optical microscopy and scanning electron microscopy show that the thin films consist of a high density of submicron-sized grains. The growth mode of the grains followed the Volmer-Weber mode. X-ray diffraction shows that the thin films have regularly arranged structures in both the horizontal and vertical directions of the substrate. A fabricated top-contacted organic thin-film transistor with the tetracene active layer showed p-type transistor characteristics with a field-effect mobility of 5.1 × 10-4 cm2 V-1 s-1.

Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

PubMed

Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

2014-11-26

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer.

PubMed

Nguyen, Minh D; Yuan, Huiyu; Houwman, Evert P; Dekkers, Matthijn; Koster, Gertjan; Ten Elshof, Johan E; Rijnders, Guus

2016-11-16

Ca 2 Nb 3 O 10 (CNOns) and Ti 0.87 O 2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO 2 /Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films are achieved by utilizing CNOns and TiOns, respectively. The piezoelectric capacitors are characterized by polarization and piezoelectric hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO 3 top and bottom electrodes directly on nanosheets/Si have ferroelectric and piezoelectric properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO 2 /YSZ, or SrTiO 3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces.

Cleaning of optical surfaces by capacitively coupled RF discharge plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, P. K., E-mail: praveenyadav@rrcat.gov.in; Rai, S. K.; Nayak, M.

2014-04-24

In this paper, we report cleaning of carbon capped molybdenum (Mo) thin film by in-house developed radio frequency (RF) plasma reactor, at different powers and exposure time. Carbon capped Mo films were exposed to oxygen plasma for different durations at three different power settings, at a constant pressure. After each exposure, the thickness of the carbon layer and the roughness of the film were determined by hard x-ray reflectivity measurements. It was observed that most of the carbon film got removed in first 15 minutes exposure. A high density layer formed on top of the Mo film was also observedmore » and it was noted that this layer cannot be removed by successive exposures at different powers. A significant improvement in interface roughness with a slight improvement in top film roughness was observed. The surface roughness of the exposed and unexposed samples was also confirmed by atomic force microscopy measurements.« less

Surface studies on scandate cathodes and synthesized scandates

NASA Technical Reports Server (NTRS)

Lesny, Gary; Forman, Ralph

1990-01-01

Auger, ESCA, electron emission, evaporation, and desorption measurements were made on three different types of scandate surfaces. They are: (1) an impregnated top layer scandate cathode, (2) an unimpregnated top layer scandate cathode with a deposited barium or barium oxide adsorbate surface layer, and (3) a synthesized scandate surface, which replicates a scandate cathode surface. The purpose of these experiments was to determine the role that Sc2O3 plays in making the scandate cathode a more copious electron emitter than the conventional impregnated-type cathode. The synthesized scandate surface experiments consisted of depositing multilayer scandium on a tungsten surface, oxidizing the scandium, and then depositing either Ba or BaO on the scandium oxide surface. The results of these measurements showed that the low work function portions of the thin-film scandate cathode are where the Sc2O3 is the substrate and BaO is the adsorbate.

Mars Rover Studies Soil on Mars

NASA Technical Reports Server (NTRS)

2004-01-01

Both out on the plains of Gusev Crater and in the 'Columbia Hills,' NASA's Mars Exploration Rover Spirit has encountered a thin (approximately 1 millimeter or 0.04 inch thick), light-colored, fine-grained layer of material on top of a dark-colored, coarser layer of soil. In the hills, Spirit stopped to take a closer look at soil compacted by one of the rover's wheels. Spirit took this image with the front hazard-avoidance camera during the rover's 314th martian day, or sol (Nov. 19, 2004).

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

PubMed

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

PubMed Central

Sokolowski-Tinten, K.; Shen, X.; Zheng, Q.; Chase, T.; Coffee, R.; Jerman, M.; Li, R. K.; Ligges, M.; Makasyuk, I.; Mo, M.; Reid, A. H.; Rethfeld, B.; Vecchione, T.; Weathersby, S. P.; Dürr, H. A.; Wang, X. J.

2017-01-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels. PMID:28795080

Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Zhang, Yingying; Chen, Aiping

2016-08-26

Epitaxial layered ternary metal-nitride FeMoN 2, (Fe 0.33 Mo 0.67)MoN 2, CoMoN 2, and FeWN 2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN 2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has beenmore » used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN 2 materials through A and B-site substitution.« less

Saturn meteorology - A diagnostic assessment of thin-layer configurations for the zonal flow

NASA Technical Reports Server (NTRS)

Allison, M.; Stone, P. H.

1983-01-01

Voyager imaging, infrared, and radio observations for Saturn have been recently interpreted by Smith et al. (1982) as an indication that the jet streams observed at the cloud tops extend to depths greater than the 10,000-bar level. This analysis assumes a maximum latitudinal temperature contrast of a few percent, a mean atmospheric rotation rate at depth given by Saturn's ratio period, and no variation with latitude of the bottom pressure level for the zonal flow system. These assumptions are not, however, firmly constrained by observation. The diagnostic analysis of plausible alternative configurations for Saturn's atmospheric structure demonstrates that a thin weather layer system (confined at mid to high latitudes to levels above 200 bar) cannot be excluded by any of the available observations. A quantitative estimate of the effects of moisture condensation (including the differentiation of mean molecular weight) suggests that these might provide the buoyancy contrasts necessary to support a thin-layer flow provided that Saturn's outer envelope is enriched approximately 10 times in water abundance relative to a solar composition atmosphere and strongly differentiated with latitude at the condensation level.

A Solvent-Free Surface Suspension Melt Technique for Making Biodegradable PCL Membrane Scaffolds for Tissue Engineering Applications.

PubMed

Suntornnond, Ratima; An, Jia; Tijore, Ajay; Leong, Kah Fai; Chua, Chee Kai; Tan, Lay Poh

2016-03-21

In tissue engineering, there is limited availability of a simple, fast and solvent-free process for fabricating micro-porous thin membrane scaffolds. This paper presents the first report of a novel surface suspension melt technique to fabricate a micro-porous thin membrane scaffolds without using any organic solvent. Briefly, a layer of polycaprolactone (PCL) particles is directly spread on top of water in the form of a suspension. After that, with the use of heat, the powder layer is transformed into a melted layer, and following cooling, a thin membrane is obtained. Two different sizes of PCL powder particles (100 µm and 500 µm) are used. Results show that membranes made from 100 µm powders have lower thickness, smaller pore size, smoother surface, higher value of stiffness but lower ultimate tensile load compared to membranes made from 500 µm powder. C2C12 cell culture results indicate that the membrane supports cell growth and differentiation. Thus, this novel membrane generation method holds great promise for tissue engineering.

Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2012-02-01

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

Wrinkled substrate and Indium Tin Oxide-free transparent electrode making organic solar cells thinner in active layer

NASA Astrophysics Data System (ADS)

Liu, Kong; Lu, Shudi; Yue, Shizhong; Ren, Kuankuan; Azam, Muhammad; Tan, Furui; Wang, Zhijie; Qu, Shengchun; Wang, Zhanguo

2016-11-01

To enable organic solar cells with a competent charge transport efficiency, reducing the thickness of active layer without sacrificing light absorption efficiency turns out to be of high feasibility. Herein, organic solar cells on wrinkled metal surface are designed. The purposely wrinkled Al/Au film with a smooth surface provides a unique scaffold for constructing thin organic photovoltaic devices by avoiding pinholes and defects around sharp edges in conventional nanostructures. The corresponding surface light trapping effect enables the thin active layer (PTB7-Th:PC71BM) with a high absorption efficiency. With the innovative MoO3/Ag/ZnS film as the top transparent electrode, the resulting Indium Tin Oxide-free wrinkled devices show a power conversion efficiency as 7.57% (50 nm active layer), higher than the planner counterparts. Thus, this paper provides a new methodology to improve the performance of organic solar cells by balancing the mutual restraint factors to a high level.

Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

DTIC Science & Technology

2010-03-01

protective layer was deposited on the top of YBCNO film by dc sputtering . A 200 nm 200 nm area film was selected and cut with a Ga ion beam (30 kV...200 TEM at 200 kV. Samples for TEM were prepared using a focused ion beam (FIB (Eindhoven, The Netherlands)) microscope. For TEM examination, a thin Pt...by dc magnetron sputtering deposition of Ag with 93 mm thickness. Transport current measurements were made in liquid nitrogen with the 4-probe method

Leaping shampoo glides on a lubricating air layer

NASA Astrophysics Data System (ADS)

Lee, S.; Li, E. Q.; Marston, J. O.; Bonito, A.; Thoroddsen, S. T.

2013-06-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer. We identify this layer by looking through the pool liquid and observing its rupture into fine bubbles. The resulting microbubble sizes suggest this air layer is of submicron thickness. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding.

Leaping shampoo glides on a lubricating air layer.

PubMed

Lee, S; Li, E Q; Marston, J O; Bonito, A; Thoroddsen, S T

2013-06-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer. We identify this layer by looking through the pool liquid and observing its rupture into fine bubbles. The resulting microbubble sizes suggest this air layer is of submicron thickness. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding.

Manure and tillage use in remediation of eroded land and impacts on soil chemical properties

USDA-ARS?s Scientific Manuscript database

Soil loss through wind and water erosion is an ongoing problem in semiarid regions. A thin layer of top soil loss over a hectare of cropland could be corresponding to tons of productive soil loss per hectare. The objectives of this study were to evaluate the influence of beef feedlot manure, tilla...

Saskatchewan

Atmospheric Science Data Center

2013-04-17

... accentuated by a thin layer of snow enable a network of rivers, roads, and farmland boundaries to stand out clearly in these ... the top. The junction of the Assiniboine and Qu'Apelle Rivers in the bottom part of the images is just east of the ... data were obtained from the NASA Langley Research Center Atmospheric Science Data Center in Hampton, VA. Image credit: ...

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Min-Jung; Lee, Tae Il; Park, Jee Ho; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Baik, Hong Koo; Lee, Woong; Myoung, Jae-Min

2012-05-01

The structure of thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) was modified by spin coating a suspension of In2O3 nanoparticles on a SiO2/p++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In2O3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In2O3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO)n ordering assisted by increased In concentration in the amorphous channel layer.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

NASA Astrophysics Data System (ADS)

Nedic, Stanko; Tea Chun, Young; Hong, Woong-Ki; Chu, Daping; Welland, Mark

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ˜16.5 V, a high drain current on/off ratio of ˜105, a gate leakage current below ˜300 pA, and excellent retention characteristics for over 104 s.

Dewetting of thin polymer films: an X-ray scattering study

NASA Astrophysics Data System (ADS)

Müller-Buschbaum, P.; Stamm, M.

1998-06-01

The surface morphology of different dewetting states of thin polymer films (polystyrene) on top of silicon substrates was investigated. With diffuse X-ray scattering in the region of total external reflection a high in-plane resolution was achieved. We observe a new nano-dewetting structure which coexists with the well known mesoscopic dewetting structures of holes, cellular pattern and drops. This nano-dewetting structure consists of small dimples with a diameter in the nanometer range. It results from the dewetting of a remaining ultra-thin polymer layer and can be explained with theoretical predictions of spinodal decomposition. The experimental results of the scattering study are confirmed with scanning-force microscopy measurements.

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksit, M.; Kolli, S. K.; Slauch, I. M.

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

The effect of underlayers on the reversal of perpendicularly magnetized multilayer thin films for magnetic micro- and nanoparticles

NASA Astrophysics Data System (ADS)

Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

2017-01-01

Perpendicularly magnetized microparticles offer the ability to locally apply high torques on soft matter under an applied magnetic field. These particles are engineered to have a zero remanence magnetic configuration via synthetic antiferromagnetic coupling using a Ru coupling interlayer. The flexibility offered by the top down thin film fabrication process in a CoFeB/Pt perpendicular thin film is demonstrated by using the Pt interlayer thicknesses in a Pt/Ru/Pt antiferromagnetic coupling multilayer to tune the applied magnetic field value of the easy axis spin-flip transition to saturation and hence the field value at which the magnetic particles are magnetically activated via a distinct transition to saturation. The importance of a Ta buffer layer on the magnetic behavior of the stack is shown. While Au capping layers are desirable for biotechnology applications, we demonstrate that they can drastically change the nucleation and propagation of domains in the film, thereby altering the reversal behavior of the thin film. The effect of Au underlayers on a multilayer thin film composed of repeated motifs of a synthetic antiferromagnetic building block is also investigated.

Transmission electron microscopy for archaeo-materials research: Nanoparticles in glazes and red/yellow glass and inorganic pigments in painted context

NASA Astrophysics Data System (ADS)

Fredrickx, Peggy

2004-10-01

This dissertation addresses the application of Transmission Electron Microscopy (TEM) to historic objects, concentrating on colour-causing nanoparticles in vitreous materials and pigments with the focus on substrates in lake pigments used in thin glaze layers, and on manuscript illustrations. TEM is well suited for archaeometry: it gives chemical elemental information, imaging and diffraction information and the amount of material needed is minimal. Sample preparation techniques suitable for historic materials are discussed. Nanoparticles can be incorporated in glass through staining. Yellow coloured glass plates contain Ag particles. Baking temperatures and different Ag-salts determine the density of the nanoparticles. Dense layers cause more saturated colours. Red glass plates can be obtained by staining with Cu-salts. Metallic Cu particles have a diameter of about 24 nm. Comparison with XRF results suggests that often a combination of Cu and Ag was used for warmer colours. Red glass can be "flashed" to the substrate glass. Then, the colour is also caused by metallic Cu particles. The red layer often displays a band structure of stacked red and transparent bands. In the transparent bands, no nanoparticles have been found. In lustre-ware, Ag and metallic Cu occur. Their distribution throughout the material determines the colour of the fragment. In both there is a dense top layer with particles of sizes smaller than 15 nm. If this top layer consists of Ag particles, the resulting colour is golden. In one sample, under this top layer the amount of Cu particles increases. This underlying layer causes the colour to redden. Particles are mainly between 5 and 15 nm in diameter. Using reconstructions, it has been demonstrated that TEM can detect and identify a stacking of thin layers in parchment decorations. A pink powder sample from Pompeii consists of a basis of allophane type clay. The lake substrates consist of Al, O, S and their amorphous structure does not seem to be noticeably changed by the addition of organic colourants. Hydrocerussite crystals (i.e. the main component of lead white) have been added to some historic glaze layers. Further it was confirmed that sometimes crystalline CaSO4 particles were added to lakes.

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okba, F.; Departement Optique et Mecanique de Precision, Faculte des Sciences de l'Ingenieur, Universite Ferhat Abbas, Setif 19000; Cherkashin, N.

2010-07-19

We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to 'clean' the top layer from pre-existing defects.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to themore » presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.« less

Layer-by-layer strippable Ag multilayer films fabricated by modular assembly.

PubMed

Li, Yan; Chen, Xiaoyan; Li, Qianqian; Song, Kai; Wang, Shihui; Chen, Xiaoyan; Zhang, Kai; Fu, Yu; Jiao, Yong-Hua; Sun, Ting; Liu, Fu-Chun; Han, En-Hou

2014-01-21

We have developed a new method to fabricate multilayer films, which uses prepared thin films as modular blocks and transfer as operation mode to build up multilayer structures. In order to distinguish it from the in situ fabrication manner, this method is called modular assembly in this study. On the basis of such concept, we have fabricated a multilayer film using the silver mirror film as the modular block and poly(lactic acid) as the transfer tool. Due to the special double-layer structure of the silver mirror film, the resulting multilayer film had a well-defined stratified architecture with alternate porous/compact layers. As a consequence of the distinct structure, the interaction between the adjacent layers was so weak that the multilayer film could be layer-by-layer stripped. In addition, the top layer in the film could provide an effective protection on the morphology and surface property of the underlying layers. This suggests that if the surface of the film was deteriorated, the top layer could be peeled off and the freshly exposed surface would still maintain the original function. The successful preparation of the layer-by-layer strippable silver multilayer demonstrates that modular assembly is a feasible and effective method to build up multilayer films capable of creating novel and attractive micro/nanostructures, having great potential in the fabrication of nanodevices and coatings.

Sensitivity of the Geomagnetic Octupole to a Stably Stratified Layer in the Earth's Core

NASA Astrophysics Data System (ADS)

Yan, C.; Stanley, S.

2017-12-01

The presence of a stably stratified layer at the top of the core has long been proposed for Earth, based on evidence from seismology and geomagnetic secular variation. Geodynamo modeling offers a unique window to inspect the properties and dynamics in Earth's core. For example, numerical simulations have shown that magnetic field morphology is sensitive to the presence of stably stratified layers in a planet's core. Here we use the mMoSST numerical dynamo model to investigate the effects of a thin stably stratified layer at the top of the fluid outer core in Earth on the resulting large-scale geomagnetic field morphology. We find that the existence of a stable layer has significant influence on the octupolar component of the magnetic field in our models, whereas the quadrupole doesn't show an obvious trend. This suggests that observations of the geomagnetic field can be applied to provide information of the properties of this plausible stable layer, such as how thick and how stable this layer could be. Furthermore, we have examined whether the dominant thermal signature from mantle tomography at the core-mantle boundary (CMB) (a degree & order 2 spherical harmonic) can influence our results. We found that this heat flux pattern at the CMB has no outstanding effects on the quadrupole and octupole magnetic field components. Our studies suggest that if there is a stably stratified layer at the top of the Earth's core, it must be limited in terms of stability and thickness, in order to be compatible with the observed paleomagnetic record.

Soft x-ray imaging with incoherent sources

NASA Astrophysics Data System (ADS)

Wachulak, P.; Torrisi, A.; Ayele, M.; Bartnik, A.; Czwartos, J.; Wegrzyński, Ł.; Fok, T.; Parkman, T.; Vondrová, Š.; Turnová, J.; Odstrcil, M.; Fiedorowicz, H.

2017-05-01

In this work we present experimental, compact desk-top SXR microscope, the EUV microscope which is at this stage a technology demonstrator, and finally, the SXR contact microscope. The systems are based on laser-plasma EUV and SXR sources, employing a double stream gas puff target. The EUV and SXR full field microscopes, operating at 13.8 nm and 2.88 nm wavelengths, respectively, are capable of imaging nanostructures with a sub-50 nm spatial resolution with relatively short (seconds) exposure times. The SXR contact microscope operates in the "water-window" spectral range, to produce an imprint of the internal structure of the sample in a thin layer of SXR light sensitive photoresist. Applications of such desk-top EUV and SXR microscopes for studies of variety of different samples - test objects for resolution assessment and other objects such as carbon membranes, DNA plasmid samples, organic and inorganic thin layers, diatoms, algae and carcinoma cells, are also presented. Details about the sources, the microscopes as well as the imaging results for various objects will be presented and discussed. The development of such compact imaging systems may be important to the new research related to biological, material science and nanotechnology applications.

Solid-state microrefrigerator

DOEpatents

Ullom, Joel N.

2003-06-24

A normal-insulator-superconductor (NIS) microrefrigerator in which a superconducting single crystal is both the substrate and the superconducting electrode of the NIS junction. The refrigerator consists of a large ultra-pure superconducting single crystal and a normal metal layer on top of the superconducting crystal, separated by a thin insulating layer. The superconducting crystal can be either cut from bulk material or grown as a thick epitaxial film. The large single superconducting crystal allows quasiparticles created in the superconducting crystal to easily diffuse away from the NIS junction through the lattice structure of the crystal to normal metal traps to prevent the quasiparticles from returning across the NIS junction. In comparison to thin film NIS refrigerators, the invention provides orders of magnitude larger cooling power than thin film microrefrigerators. The superconducting crystal can serve as the superconducting electrode for multiple NIS junctions to provide an array of microrefrigerators. The normal electrode can be extended and supported by microsupports to provide support and cooling of sensors or arrays of sensors.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Method for making a dynamic pressure sensor and a pressure sensor made according to the method

NASA Technical Reports Server (NTRS)

Zuckerwar, Allan J. (Inventor); Robbins, William E. (Inventor); Robins, Glenn M. (Inventor)

1994-01-01

A method for providing a perfectly flat top with a sharp edge on a dynamic pressure sensor using a cup-shaped stretched membrane as a sensing element is described. First, metal is deposited on the membrane and surrounding areas. Next, the side wall of the pressure sensor with the deposited metal is machined to a predetermined size. Finally, deposited metal is removed from the top of the membrane in small steps, by machining or lapping while the pressure sensor is mounted in a jig or the wall of a test object, until the true top surface of the membrane appears. A thin indicator layer having a color contrasting with the color of the membrane may be applied to the top of the membrane before metal is deposited to facilitate the determination of when to stop metal removal from the top surface of the membrane.

MoRu/Be multilayers for extreme ultraviolet applications

DOEpatents

Bajt, Sasa C.; Wall, Mark A.

2001-01-01

High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

Ferroelectric Thin Film Development

DTIC Science & Technology

2003-12-10

under the same processing parameters, are discussed for comparison purposes. Next, 75 ITO and In2O3/ Ga2O3 (IGO) are discussed as transparent top...Once a constant rate of 0.2 Å/s is obtained, a thin (2 nm) Ga2O3 layer is deposited to keep the In2O3 out of direct contact with the PZT. As...the In source is heated until the total rate is 1 Å/s. A 20:80 ratio of Ga2O3 to In2O3 is reported to have a work function close to 5 eV. [62] The

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

Imprint control of BaTiO 3 thin films via chemically induced surface polarization pinning

DOE PAGES

Lee, Hyungwoo; Kim, Tae Heon; Patzner, Jacob J.; ...

2016-02-22

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO 3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectricmore » phase in BTO tunnel junctions. Here, we conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.« less

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

PubMed

Geier, Michael L; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R; Hersam, Mark C

2016-07-13

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Hierarchy of adhesion forces in patterns of photoreactive surface layers

NASA Astrophysics Data System (ADS)

Hlawacek, Gregor; Shen, Quan; Teichert, Christian; Lex, Alexandra; Trimmel, Gregor; Kern, Wolfgang

2009-01-01

Precise control of surface properties including electrical characteristics, wettability, and friction is a prerequisite for manufacturing modern organic electronic devices. The successful combination of bottom up approaches for aligning and orienting the molecules and top down techniques to structure the substrate on the nano- and micrometer scale allows the cost efficient fabrication and integration of future organic light emitting diodes and organic thin film transistors. One possibility for the top down patterning of a surface is to utilize different surface free energies or wetting properties of a functional group. Here, we used friction force microscopy (FFM) to reveal chemical patterns inscribed by a photolithographic process into a photosensitive surface layer. FFM allowed the simultaneous visualization of at least three different chemical surface terminations. The underlying mechanism is related to changes in the chemical interaction between probe and film surface.

A Classification of Subaqueous Density Flows Based on Transformations From Proximal to Distal Regions

NASA Astrophysics Data System (ADS)

Hermidas, Navid; Eggenhuisen, Joris; Luthi, Stefan; Silva Jacinto, Ricardo; Toth, Ferenc; Pohl, Florian

2017-04-01

Transformations of a subaqueous density flow from proximal to distal regions are investigated. A classification of these transformations based on the state of the free shear and boundary layers and existence of a plug layer during transition from a debris flow to a turbidity current is presented. A connection between the emplaced deposit by the flow and the relevant flow type is drawn through the results obtained from a series of laboratory flume experiments. These were performed using 9%, 15%, and 21% sediment mixture concentrations composed of sand, silt, clay, and tap water, on varying bed slopes of 6°, 8°, and 9.5°, and with discharge rates of 10[m3/h] and 15[m3/h]. Stress-controlled rheometry experiments were performed on the mixtures to obtain apparent viscosity data. A classification was developed based on the imposed flow conditions, where a cohesive flow may fall within one of five distinct flow types: 1) a cohesive plug flow (PF) with a laminar free shear and boundary layers, 2) a top transitional plug flow (TTPF) containing a turbulent free shear layer, a plug layer, and a laminar boundary layer, 3) a complete transitional plug flow (CTPF) consisting of a turbulent free shear and boundary layers and a plug, 4) a transitional turbidity current (TTC) with a turbulent free shear layer and a laminar boundary layer, and, 5) a completely turbulent turbidity current (TC). During the experiments, flow type PF resulted in en masse deposition of a thick uniform ungraded muddy sand mixture, which was emplaced once the yield stress overcame the gravitational forces within the tail region of the flow. Flow type TTPF resulted in deposition of a thin ungraded basal clean sand layer during the run. This layer was covered by a muddy sand deposit from the tail. Flow type TTC did not deposit any sediment during the run. A uniform muddy sand mixture was emplaced by the tail of the flow. Flow type TC resulted in deposition of poorly sorted massive bottom sand layer. This layer was overlain by either a muddy sand mixture or a sand and silt planar lamination. Flow type CTPF was not observed during the experiments. Furthermore, it was observed that flows which are in transition from a TTC to a TTPF result in a thin bottom clean sand layer covered by a banded transitional interval. This was overlain by a muddy sand layer and a very thin clean sand layer, resulting from traction by dilute turbulent wake. In all cases a mud cap was emplaced on top of the deposit after the runs were terminated.

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

Fully solution-processing route toward highly transparent polymer solar cells.

PubMed

Guo, Fei; Kubis, Peter; Stubhan, Tobias; Li, Ning; Baran, Derya; Przybilla, Thomas; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2014-10-22

We report highly transparent polymer solar cells using metallic silver nanowires (AgNWs) as both the electron- and hole-collecting electrodes. The entire stack of the devices is processed from solution using a doctor blading technique. A thin layer of zinc oxide nanoparticles is introduced between photoactive layer and top AgNW electrode which plays decisive roles in device functionality: it serves as a mechanical foundation which allows the solution-deposition of top AgNWs, and more importantly it facilitates charge carriers extraction due to the better energy level alignment and the formation of ohmic contacts between the active layer/ZnO and ZnO/AgNWs. The resulting semitransparent polymer:fullerene solar cells showed a power conversion efficiency of 2.9%, which is 72% of the efficiency of an opaque reference device. Moreover, an average transmittance of 41% in the wavelength range of 400-800 nm is achieved, which is of particular interest for applications in transparent architectures.

Solution-processed transparent blue organic light-emitting diodes with graphene as the top cathode

PubMed Central

Chang, Jung-Hung; Lin, Wei-Hsiang; Wang, Po-Chuan; Taur, Jieh-I; Ku, Ting-An; Chen, Wei-Ting; Yan, Shiang-Jiuan; Wu, Chih-I

2015-01-01

Graphene thin films have great potential to function as transparent electrodes in organic electronic devices, due to their excellent conductivity and high transparency. Recently, organic light-emitting diodes (OLEDs)have been successfully demonstrated to possess high luminous efficiencies with p-doped graphene anodes. However, reliable methods to fabricate n-doped graphene cathodes have been lacking, which would limit the application of graphene in flexible electronics. In this paper, we demonstrate fully solution-processed OLEDs with n-type doped multilayer graphene as the top electrode. The work function and sheet resistance of graphene are modified by an aqueous process which can also transfer graphene on organic devices as the top electrodes. With n-doped graphene layers used as the top cathode, all-solution processed transparent OLEDs can be fabricated without any vacuum process. PMID:25892370

Investigation of Asphalt Mixture Creep Behavior Using Thin Beam Specimens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zofka, Adam; Marasteanu, Mihai; Turos, Mugur

2008-02-15

The asphalt pavement layer consists of two or more lifts of compacted asphalt mixture; the top of the layer is also exposed to aging, a factor that significantly affects the mixture properties. The current testing specifications use rather thick specimens that cannot be used to investigate the gradual change in properties with pavement depth. This paper investigates the feasibility of using the 3-point bending test with thin asphalt mixture beams (127x12.7x6.35 mm) to determine the low-temperature creep compliance of the mixtures. Several theoretical and semi-empirical models, from the theory of composites, are reviewed and evaluated using numerical and experimental data.more » Preliminary results show that this method can be used for low-temperature mixture characterization but several crucial factors need further inspection and interpretation.« less

Terahertz antireflection coating enabled by a subwavelength metallic mesh capped with a thin dielectric film

DOE PAGES

Huang, Li; Chen, Hou -Tong; Zeng, Beibei; ...

2016-03-30

Metamaterials/metasurfaces have enabled unprecedented manipulation of electromagnetic waves. Here we present a new design of metasurface structure functioning as antireflection coatings. The structure consists of a subwavelength metallic mesh capped with a thin dielectric layer on top of a substrate. By tailoring the geometric parameters of the metallic mesh and the refractive index and thickness of the capping dielectric film, reflection from the substrate can be completely eliminated at a specific frequency. Compared to traditional methods such as coatings with single- or multi-layer dielectric films, the metasurface antireflection coatings are much thinner and the requirement of index matching is largelymore » lifted. Here, this approach is particularly suitable for antireflection coatings in the technically challenging terahertz frequency range and is also applicable in other frequency regimes.« less

Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

NASA Technical Reports Server (NTRS)

Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

1998-01-01

Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

NASA Astrophysics Data System (ADS)

Hong, Won-Eui; Ro, Jae-Sang

2015-01-01

Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films is carried out by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. Arc instability, however, is observed during crystallization, and is attributed to dielectric breakdown in the conductor/insulator/transformed polycrystalline silicon (poly-Si) sandwich structures at high temperatures during electrical pulsing for crystallization. In this study, we devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. The Mo layer was used as a Joule-heat source for the crystallization of pre-patterned active islands of a-Si films. JIC-processed poly-Si thin-film transistors (TFTs) were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.

Deoxyribonucleic acid (DNA) cladding layers for nonlinear-optic-polymer-based electro-optic devices

NASA Astrophysics Data System (ADS)

Grote, James G.; Ogata, Naoya; Diggs, Darnell E.; Hopkins, Frank K.

2003-07-01

Nonlinear optic (NLO) polymer based electro-optic devices have been achieving world record low half wave voltages and high frequencies over the last 2-3 years. Part of the advancement is through the use of relatively more conductive polymers for the cladding layers. Based on the current materials available for these cladding materials, however, the desired optical and electromagnetic properites are being balanced for materials processability. One does not want the solvent present in one layer to dissovle the one deposited underneath, or be dissolved by the one being deposited on top. Optimized polymer cladding materials, to further enhance device performance, are continuing to be investigated. Thin films of deoxyribonucleic acid (DNA), derived from salmon sperm, show promise in providing both the desired optical and magnetic properties, as well as the desired resistance to various solvents used for NLO polymer device fabrication. Thin films of DNA were deposited on glass and silicon substrates and the film quality, optical and electromagnetic properties and resistance to various solvents were characterized.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, S. K.; Misra, D.; Agrawal, D. C.

2011-01-01

Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba{sub x}Sr{sub 1-x}TiO{sub 3}, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found thatmore » inserting a ZrO{sub 2} layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO{sub 2} layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO{sub 2}/BST multilayer structure is studied. The multilayer Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3}/ZrO{sub 2}/Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO{sub 2} layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO{sub 2} layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO{sub 2} layer thickness.« less

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

PubMed

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Interfacial thin films rupture and self-similarity

NASA Astrophysics Data System (ADS)

Ward, Margaret H.

2011-06-01

Two superposed thin layers of fluids are prone to interfacial instabilities due to London-van der Waals forces. Evolution equations for the film thicknesses are derived using lubrication theory. Using the intrinsic scales, for a single layer, results in a system with parametric dependence of four ratios of the two layers: surface tension, Hamaker constant, viscosity, and film thickness. In contrast to the single layer case, the bilayer system has two unstable eigenmodes: squeezing and bending. For some particular parameter regimes, the system exhibits the avoided crossing behavior, where the two eigenmodes are interchanged. Based on numerical analysis, the system evolves into four different rupture states: basal layer rupture, upper layer rupture, double layer rupture, and mixed layer rupture. The ratio of Hamaker constants and the relative film thickness of the two layers control the system dynamics. Remarkably, the line of avoided crossing demarks the transition region of mode mixing and energy transfer, affecting the scaling of the dynamical regime map consequentially. Asymptotic and numerical analyses are used to examine the self-similar ruptures and to extract the power law scalings for both the basal layer rupture and the upper layer rupture. The scaling laws for the basal layer rupture are the same as those of the single layer on top of a substrate. The scaling laws for the upper layer rupture are different: the lateral length scale decreases according to (tr-t)1/3 and the film thickness decreases according to (tr-t)1/6.

Light Trapping for Silicon Solar Cells: Theory and Experiment

NASA Astrophysics Data System (ADS)

Zhao, Hui

Crystalline silicon solar cells have been the mainstream technology for photovoltaic energy conversion since their invention in 1954. Since silicon is an indirect band gap material, its absorption coefficient is low for much of the solar spectrum, and the highest conversion efficiencies are achieved only in cells that are thicker than about 0.1 mm. Light trapping by total internal reflection is important to increase the optical absorption in silicon layers, and becomes increasingly important as the layers are thinned. Light trapping is typically characterized by the enhancement of the absorptance of a solar cell beyond the value for a single pass of the incident beam through an absorbing semiconductor layer. Using an equipartition argument, in 1982 Yablonovitch calculated an enhancement of 4n2 , where n is the refractive index. We have extracted effective light-trapping enhancements from published external quantum efficiency spectra in several dozen silicon solar cells. These results show that this "thermodynamic" enhancement has never been achieved experimentally. The reasons for incomplete light trapping could be poor anti-reflection coating, inefficient light scattering, and parasitic absorption. We report the light-trapping properties of nanocrystalline silicon nip solar cells deposited onto two types of Ag/ZnO backreflectors at United Solar Ovonic, LLC. We prepared the first type by first making silver nanparticles onto a stainless steel substrate, and then overcoating the nanoparticles with a second silver layer. The second type was prepared at United Solar using a continuous silver film. Both types were then overcoated with a ZnO film. The root mean square roughness varied from 27 to 61 nm, and diffuse reflectance at 1000 nm wavelength varied from 0.4 to 0.8. The finished cells have a thin, indium-tin oxide layer on the top that acts as an antireflection coating. For both backreflector types, the short-circuit photocurrent densities J SC for solar illumination were about 25 mA/cm2 for 1.5 micron cells. We also measured external quantum efficiency spectra and optical reflectance spectra, which were only slightly affected by the back reflector morphology. We performed a thermodynamic calculation for the optical absorptance in the silicon layer and the top oxide layer to explain the experimental results; the calculation is an extension of previous work by Stuart and Hall that incorporates the antireflection properties and absorption in the top oxide film. From our calculations and experimental measurements, we concluded that parasitic absorption in this film is the prominent reason for incomplete light trapping in these cells. To reduce the optical parasitic loss in the top oxide layer, we propose a bilayer design, and show the possible benefits to the photocurrent density.

Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.

PubMed

Seo, Jin-Suk; Bae, Byeong-Soo

2014-09-10

We fabricated active single- and bilayer structure thin film transistors (TFTs) with aluminum or gallium doped (IZO:Al or IZO:Ga) and undoped indium zinc oxide (IZO) thin film layers using an aqueous solution process. The electrical performance and bias stability of these active single- and bilayer structure TFTs were investigated and compared to reveal the effects of Al/Gal doping and bilayer structure. The single-layer structure IZO TFT shows a high mobility of 19 cm(2)/V · s with a poor positive bias stability (PBS) of ΔVT + 3.4 V. However, Al/Ga doped in IZO TFT reduced mobility to 8.5-9.9 cm(2)/V · s but improved PBS to ΔVT + 1.6-1.7 V due to the reduction of oxygen vacancy. Thus, it is found the bilayer structure TFTs with a combination of bottom- and top-layer compositions modify both the mobility and bias stability of the TFTs to be optimized. The bilayer structure TFT with an IZO:X bottom layer possess high mobility and an IZO bottom layer improves the PBS.

Self-organization of palladium nanoislands on GaN and AlxGa1-xN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Stafiniak, Andrzej; Szymański, Tomasz; Paszkiewicz, Regina

2017-12-01

We report on systematic study on the dewetting process of thin Pd layer and self-organized Pd nano-islands on SiO2, GaN and AlxGa1-xN/GaN heterostructures with various Al content. The influence of factors such as the thickness of metal layer, type of top layer of AlGaN/GaN heterostructures, temperature and time of annealing process on the dimensions, shapes and density of Pd islands was analyzed. Comparing the behavior of self-organization of Pd islands on Al0.25Ga0.75N/GaN and SiO2 we can conclude that solid-state dewetting process on SiO2 occures much faster than on Al0.25Ga0.75N. For substrates with SiO2 this process requires less energy and can arise for thicker layer. On the Al0.25Ga0.75N surface the islands take more crystalline shape which is probably due to surface reconstruction of Pd-Ga alloy thin layer on interface. For thin metal layer the coalescence of islands into larger islands similar to Ostwald ripening mechanism was observed. Greater surface roughness of AlxGa1-xN/GaN heterostructures with higher Al content causes an increase of surface density of islands and the reduction of their sizes which improves the roundness. In case of GaN and AlxGa1-xN layers with Al content lower than 20%, the surface degradation caused by annealing process was observed. Probably, this is due to the decomposition of layers with gallium droplet formation on catalytic metal islands.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Layer of organic pine forest soil on top of chlorophenol-contaminated mineral soil enhances contaminant degradation.

PubMed

Sinkkonen, Aki; Kauppi, Sari; Simpanen, Suvi; Rantalainen, Anna-Lea; Strömmer, Rauni; Romantschuk, Martin

2013-03-01

Chlorophenols, like many other synthetic compounds, are persistent problem in industrial areas. These compounds are easily degraded in certain natural environments where the top soil is organic. Some studies suggest that mineral soil contaminated with organic compounds is rapidly remediated if it is mixed with organic soil. We hypothesized that organic soil with a high degradation capacity even on top of the contaminated mineral soil enhances degradation of recalcitrant chlorophenols in the mineral soil below. We first compared chlorophenol degradation in different soils by spiking pristine and pentachlorophenol-contaminated soils with 2,4,6-trichlorophenol in 10-L buckets. In other experiments, we covered contaminated mineral soil with organic pine forest soil. We also monitored in situ degradation on an old sawmill site where mineral soil was either left intact or covered with organic pine forest soil. 2,4,6-Trichlorophenol was rapidly degraded in organic pine forest soil, but the degradation was slower in other soils. If a thin layer of the pine forest humus was added on top of mineral sawmill soil, the original chlorophenol concentrations (high, ca. 70 μg g(-1), or moderate, ca. 20 μg g(-1)) in sawmill soil decreased by >40 % in 24 days. No degradation was noticed if the mineral soil was kept bare or if the covering humus soil layer was sterilized beforehand. Our results suggest that covering mineral soil with an organic soil layer is an efficient way to remediate recalcitrant chlorophenol contamination in mineral soils. The results of the field experiment are promising.

Growth and sacrificial oxidation of transition metal nanolayers

NASA Astrophysics Data System (ADS)

Tsarfati, Tim; Zoethout, Erwin; van de Kruijs, Robbert; Bijkerk, Fred

2009-04-01

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e - donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.

Study of space charge layer in silver bromide microcrystals by means of ultraviolet photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Tani, Tadaaki; Inami, Yoshiyasu

2000-09-01

Ultraviolet photoelectron spectroscopy has been successfully used to measure the heights of the tops of the valence bands of the surfaces of AgBr layers on Ag substrates for the verification of the space charge layer model. According to this model, the positive space charge layer (composed of negative charges with excess negative kink sites on the surface and corresponding positive charges with interstitial silver ions in the interior) is formed in silver halides, causing the difference in the electronic energy levels between their surface and interior. The depression of the positive space charge layer of AgBr caused by such adsorbates as photographic stabilizers and antifoggants was estimated from the decrease in the ionic conductivity of cubic AgBr microcrystals by the adsorbates. It was confirmed by the decrease in the heights of the tops of the valence bands of the surfaces of AgBr layers caused by the adsorbates in the presence of thin gelatin membranes on their surfaces. This result provided the explanation for the fact that the adsorbates increased the number of the microcrystals which formed latent image centers on the surface and decreased the number of the microcrystals, which formed latent image centers in the interior.

Applications of thin carbon coatings and films in injection molding

NASA Astrophysics Data System (ADS)

Cabrera, Eusebio Duarte

In this research, the technical feasibility of two novel applications of thin carbon coatings is demonstrated. The first application consists of using thin carbon coatings on molds for molding ultra-thin plastic parts (<0.5 mm thickness) with lower pressures by promoting wall slip. The second application consists of a new approach to provide electromagnetic interference (EMI) shielding for plastic parts using in mold coated nanoparticle thin films or nanopapers to create a conductive top layer. During this research, the technical feasibility of a new approach was proven which provides injection molding of ultra-thin parts at lower pressures, without the need of fast heating/fast cooling or other expensive mold modification. An in-house developed procedure by other members of our group, was employed for coating the mold surface using chemical vapor deposition (CVD) resulting in a graphene coating with carbide bonding to the mold surface. The coating resulted in a significant decrease of surface friction and consequently easiness of flow when compared to their uncoated counterparts. Thermoplastic polymers and their composites are a very attractive alternative but are hindered by the non-conductive nature of polymers. There are two general approaches used to date to achieve EMI shielding for plastic products. One is to spray a conductive metal coating onto the plastic surface forming a layer that must maintain its shielding effectiveness (SE), and its adhesion to the plastic throughout the expected life of the product. However, metal coatings add undesirable weight and tend to corrode over time. Furthermore, scratching the coating may create shielding failure; therefore, a protective topcoat may be required. The other approach is to use polymer composites filled with conductive fillers such as carbon black (CB), carbon nanofiber (CNF), and carbon nanotube (CNT). While conductive fillers may increase the electrical conductivity of polymer composites, the loading of such fillers often cannot reach a high level (<10 wt. %) due to the dispersion difficulty and exponential increase in viscosity. In this research, the technical feasibility of a new approach to EMI shielding of plastic parts was proven using in mold coated nanoparticle thin films or nanopapers to create a conductive top layer. For many years, in-mold coating (IMC) has been commercially applied to Sheet Molding Compound (SMC) compression molded parts, as an environmentally friendly approach to improve its surface quality and provide the required conductivity for electrostatic painting using carbon black (CB). Such process can also be applied to injection molding for creating a top conductive layer. Increasing the amount of CB will increase the surface conductivity of the coated part, thus improving the paint transfer efficiency. However the CB levels needed to achieve the conductivity levels required for achieving EMI shielding would make the coating viscosity too large for proper coating. Nanopaper based composites are excellent candidates for EMI shielding because of the nanopaper's high concentration of carbon nanofibers (CNFs) (~2 wt% to 10 wt% depending on nanopaper/thermoplastic thickness and 71wt.% to 79wt.% in the nanopaper itself after resin infusion) and high conductivity of the nanopaper. Instead of premixing nanoparticles with IMC coating, nanopapers enable the use of low viscosity IMC without CB coating to impregnate the CNF network in order to reach high electrical conductivity and EMI shielding values. (Abstract shortened by UMI.).

Aerosol characteristics in the entrainment interface layer in relation to the marine boundary layer and free troposphere

NASA Astrophysics Data System (ADS)

Dadashazar, Hossein; Braun, Rachel A.; Crosbie, Ewan; Chuang, Patrick Y.; Woods, Roy K.; Jonsson, Haflidi H.; Sorooshian, Armin

2018-02-01

This study uses airborne data from two field campaigns off the California coast to characterize aerosol size distribution characteristics in the entrainment interface layer (EIL), a thin and turbulent layer above marine stratocumulus cloud tops, which separates the stratocumulus-topped boundary layer (STBL) from the free troposphere (FT). The vertical bounds of the EIL are defined in this work based on considerations of buoyancy and turbulence using thermodynamic and dynamic data. Aerosol number concentrations are examined from three different probes with varying particle diameter (Dp) ranges: > 3 nm, > 10 nm, and 0.11-3.4 µm. Relative to the EIL and FT layers, the sub-cloud (SUB) layer exhibited lower aerosol number concentrations and higher surface area concentrations. High particle number concentrations between 3 and 10 nm in the EIL are indicative of enhanced nucleation, assisted by high actinic fluxes, cool and moist air, and much lower surface area concentrations than the STBL. Slopes of number concentration versus altitude in the EIL were correlated with the particle number concentration difference between the SUB and lower FT layers. The EIL aerosol size distribution was influenced by varying degrees from STBL aerosol versus subsiding FT aerosol depending on the case examined. These results emphasize the important role of the EIL in influencing nucleation and aerosol-cloud-climate interactions.

Verification of antiferromagnetic exchange coupling at room temperature using polar magneto-optic Kerr effect in thin EuS/Co multilayers with perpendicular magnetic anisotropy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goschew, A., E-mail: alexander.goschew@fu-berlin.de; Scott, M.; Fumagalli, P.

2016-08-08

We report on magneto-optic Kerr measurements in polar geometry carried out on a series of thin Co/EuS multilayers on suitable Co/Pd-multilayer substrates. Thin Co/EuS multilayers of a few nanometers individual layer thickness usually have their magnetization in plane. Co/Pd multilayers introduce a perpendicular magnetic anisotropy in the Co/EuS layers deposited on top, thus making it possible to measure magneto-optic signals in the polar geometry in remanence in order to study exchange coupling. Magneto-optic Kerr-effect spectra and hysteresis loops were recorded in the visible and ultraviolet photon-energy range at room temperature. The EuS contribution to the magneto-optic signal is extracted atmore » 4.1 eV by combining hysteresis loops measured at different photon energies with polar magneto-optic Kerr-effect spectra recorded in remanence and in an applied magnetic field of 2.2 T. The extracted EuS signal shows clear signs of antiferromagnetic coupling of the Eu magnetic moments to the Co layers. This implies that the ordering temperature of at least a fraction of the EuS layers is above room temperature proving that magneto-optic Kerr-effect spectroscopy can be used here as a quasi-element-specific method.« less

Microstructure and Tensile Behavior of Laser Arc Hybrid Welded Dissimilar Al and Ti Alloys

PubMed Central

Gao, Ming; Chen, Cong; Gu, Yunze; Zeng, Xiaoyan

2014-01-01

Fiber laser-cold metal transfer arc hybrid welding was developed to welding-braze dissimilar Al and Ti alloys in butt configuration. Microstructure, interface properties, tensile behavior, and their relationships were investigated in detail. The results show the cross-weld tensile strength of the joints is up to 213 MPa, 95.5% of same Al weld. The optimal range of heat input for accepted joints was obtained as 83–98 J·mm−1. Within this range, the joint is stronger than 200 MPa and fractures in weld metal, or else, it becomes weaker and fractures at the intermetallic compounds (IMCs) layer. The IMCs layer of an accepted joint is usually thin and continuous, which is about 1μm-thick and only consists of TiAl2 due to fast solidification rate. However, the IMCs layer at the top corner of fusion zone/Ti substrate is easily thickened with increasing heat input. This thickened IMCs layer consists of a wide TiAl3 layer close to FZ and a thin TiAl2 layer close to Ti substrate. Furthermore, both bead shape formation and interface growth were discussed by laser-arc interaction and melt flow. Tensile behavior was summarized by interface properties. PMID:28788533

E4 True and False Color Hot Spot Mosaic

NASA Image and Video Library

1998-03-06

True and false color views of Jupiter from NASA's Galileo spacecraft show an equatorial "hotspot" on Jupiter. These images cover an area 34,000 kilometers by 11,000 kilometers (about 21,100 by 6,800 miles). The top mosaic combines the violet and near infrared continuum filter images to create an image similar to how Jupiter would appear to human eyes. Differences in coloration are due to the composition and abundances of trace chemicals in Jupiter's atmosphere. The bottom mosaic uses Galileo's three near-infrared wavelengths displayed in red, green, and blue) to show variations in cloud height and thickness. Bluish clouds are high and thin, reddish clouds are low, and white clouds are high and thick. The dark blue hotspot in the center is a hole in the deep cloud with an overlying thin haze. The light blue region to the left is covered by a very high haze layer. The multicolored region to the right has overlapping cloud layers of different heights. Galileo is the first spacecraft to distinguish cloud layers on Jupiter. North is at the top. The mosaic covers latitudes 1 to 10 degrees and is centered at longitude 336 degrees west. The smallest resolved features are tens of kilometers in size. These images were taken on December 17, 1996, at a range of 1.5 million kilometers (about 930,000 miles) by the Solid State Imaging camera system aboard Galileo. http://photojournal.jpl.nasa.gov/catalog/PIA00602

Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

PubMed

Yu, Xinge; Zhou, Nanjia; Smith, Jeremy; Lin, Hui; Stallings, Katie; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio

2013-08-28

We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.

Defect-driven flexochemical coupling in thin ferroelectric films

NASA Astrophysics Data System (ADS)

Eliseev, Eugene A.; Vorotiahin, Ivan S.; Fomichov, Yevhen M.; Glinchuk, Maya D.; Kalinin, Sergei V.; Genenko, Yuri A.; Morozovska, Anna N.

2018-01-01

Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical coupling on the size effects in polar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultrathin layer of ambient screening charges, characterized by a surface screening length. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexochemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTi O3 films containing a layer of elastic defects. A nontrivial result is the persistence of ferroelectricity at film thicknesses below 4 nm, temperatures lower than 350 K, and relatively high surface screening length (˜0.1 nm ) . The origin of this phenomenon is the flexoelectric coupling leading to the rebuilding of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm. The ferroelectricity persistence is facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

Thin film molybdenum silicide as potential temperature sensors for turbine engines

NASA Technical Reports Server (NTRS)

Ho, C. H.; Prakash, S.; Deshpandey, C. V.; Doerr, H. J.; Bunshah, R. F.

1989-01-01

Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

Measurement of the differential cross sections of 6Li(d,d0) for Ion Beam Analysis purposes

NASA Astrophysics Data System (ADS)

Ntemou, E.; Aslanoglou, X.; Axiotis, M.; Foteinou, V.; Kokkoris, M.; Lagoyannis, A.; Misaelides, P.; Patronis, N.; Preketes-Sigalas, K.; Provatas, G.; Vlastou, R.

2017-09-01

In the present work, the 6Li(d,d0)6Li elastic scattering differential cross sections were measured in the energy range Ed,lab = 940-2000 keV for Elastic Backscattering Spectroscopy (EBS) purposes, using thin lithium targets, made by evaporating isotopically enriched 6LiF powder on self-supporting carbon foils, with an ultra-thin Au layer on top for normalization purposes. The experiment was carried out in deuteron beam energy steps of 20 or 30 keV and for the laboratory scattering angles of 125°, 140°, 150°, 160°, and 170°.

Cooperative suction by vertical capillary array pump for controlling flow profiles of microfluidic sensor chips.

PubMed

Horiuchi, Tsutomu; Hayashi, Katsuyoshi; Seyama, Michiko; Inoue, Suzuyo; Tamechika, Emi

2012-10-18

A passive pump consisting of integrated vertical capillaries has been developed for a microfluidic chip as an useful component with an excellent flow volume and flow rate. A fluidic chip built into a passive pump was used by connecting the bottoms of all the capillaries to a top surface consisting of a thin layer channel in the microfluidic chip where the thin layer channel depth was smaller than the capillary radius. As a result the vertical capillaries drew fluid cooperatively rather than independently, thus exerting the maximum suction efficiency at every instance. This meant that a flow rate was realized that exhibited little variation and without any external power or operation. A microfluidic chip built into this passive pump had the ability to achieve a quasi-steady rather than a rapidly decreasing flow rate, which is a universal flow characteristic in an ordinary capillary.

High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke

2014-07-21

Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductivemore » graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.« less

Scintillator for low accelerating voltage scanning electron microscopy imaging

NASA Astrophysics Data System (ADS)

Bowser, Christopher; Tzolov, Marian; Barbi, Nicholas

Scintillators are essential in detecting electrons in SEM. The conventional scintillators such as YAP and YAG have poor response at low accelerating voltages due to a top conductive layer of ITO or Al. We have developed a thin film ZnWO4 scintillator with high photoluminescence quantum efficiency of 60% with enough electrical conductivity to prevent charging. We are showing that the ZnWO4 films are effective in detecting electrons at low accelerating voltages. This makes it a good option for a top layer on crystalline scintillators and we have integrated ZnWO4 with YAP to explore the high response of YAP at high electron energies and the effective response of ZnWO4 at low electron energies. We will compare the spectral intensities over a range of accelerating voltages between 1 and 30kV between the conventional and coupled thin film scintillator. The results are interpreted using a simulation of the depth profile of the electron penetration in the scintillator using CASINO. We have verified the absence of charging by measuring the sum of the secondary and backscattered electron coefficients. We have built detectors with the combined scintillators and we will compare SEM images recorded simultaneously by conventional and ZnWO4-based scintillators.

Pinholes and Nano-oxide Specular Layers in Spin Valves

NASA Astrophysics Data System (ADS)

Fry, R. A.; Egelhoff, W. F., Jr.; McMichael, R. D.; Chen, P. J.; Powell, C. J.; Beach, G.; Berkowitz, A. E.

2001-03-01

Recently, nano-oxide layers (NOL) in giant magnetoresistance (GMR) spin valves have attracted interest as a method of achieving increased GMR associated with specular reflection at Co/oxide interfaces. The NOL must be thin enough so that strong magnetic coupling across it exists; otherwise, the films separated by NOL could switch separately. We have investigated the structure NiO/2.5 nm Co/2.5 nm Cu/2 nm Co/NOL/2 nm Co/10 nm IrMn. The bottom Co is pinned by NiO more strongly than the top Co is pinned by IrMn; thus the top Co film can be switched to observe GMR loops. With no NOL, the GMR loop obtained by switching the 4 nm top Co film is shifted 300 Oe by the exchange bias of IrMn. Using CoO as a NOL, at thickness of 1 nm there is a sudden drop from 300 Oe to <10 Oe. It appears that pinhole coupling at CoO<1 nm forces the two Co films to switch together, but at CoO 1 nm the pinholes close up and the Co films switch separately. Such observations constitute a new approach to the study of pinholes, and we use it to investigate several oxides and metal spacer layers.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

High extinction ratio and low transmission loss thin-film terahertz polarizer with a tunable bilayer metal wire-grid structure.

PubMed

Huang, Zhe; Parrott, Edward P J; Park, Hongkyu; Chan, Hau Ping; Pickwell-MacPherson, Emma

2014-02-15

A thin-film terahertz polarizer is proposed and realized via a tunable bilayer metal wire-grid structure to achieve high extinction ratios and good transmission. The polarizer is fabricated on top of a thin silica layer by standard micro-fabrication techniques to eliminate the multireflection effects. The tunable alignment of the bilayer aluminum-wire grid structure enables tailoring of the extinction ratio and transmission characteristics. Using terahertz time-domain spectroscopy (THz-TDS), a fabricated polarizer is characterized, with extinction ratios greater than 50 dB and transmission losses below 1 dB reported in the 0.2-1.1 THz frequency range. These characteristics can be improved by further tuning the polarizer parameters such as the pitch, metal film thickness, and lateral displacement.

Tessellated gold nanostructures from Au144(SCH2CH2Ph)60 molecular precursors and their use in organic solar cell enhancement

NASA Astrophysics Data System (ADS)

Bauld, Reg; Hesari, Mahdi; Workentin, Mark S.; Fanchini, Giovanni

2014-06-01

We report for the first time the fabrication of nanocomposite hole-blocking layers consisting of poly-3,4-ethylene-dioxythiophene:poly-styrene-sulfonate (PEDOT:PSS) thin films incorporating networks of gold nanoparticles assembled from Au144(SCH2CH2Ph)60, a molecular gold precursor. These thin films can be prepared reproducibly on indium tin oxide by spinning on it Au144(SCH2CH2Ph)60 solutions in chlorobenzene, annealing the resulting thin film at 400 °C, and subsequently spinning PEDOT:PSS on top. The use of our nanocomposite hole-blocking layers for enhancing the photoconversion efficiency of bulk heterojunction organic solar cells is demonstrated. By varying the concentration of Au144(SCH2CH2Ph)60 in the starting solution and the annealing time, different gold nanostructures were obtained ranging from individual gold nanoparticles (AuNPs) to tessellated networks of gold nanostructures (Tess-AuNPs). Improvement in organic solar cell efficiencies up to 10% relative to a reference cell is demonstrated with Tess-AuNPs embedded in PEDOT:PSS.

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes

PubMed Central

2012-01-01

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer. PMID:23181826

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes.

PubMed

Bae, Yu Jeong; Lee, Nyun Jong; Kim, Tae Hee; Cho, Hyunduck; Lee, Changhee; Fleet, Luke; Hirohata, Atsufumi

2012-11-26

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.

Influence of the shape of the layers in photo-cured dental restorations on the shrinkage stress peaks-FEM study.

PubMed

Kowalczyk, Piotr

2009-12-01

The aim of the paper is to analyse an influence of the shape of the layers in photo-cured dental restorations of Class I on distribution of shrinkage stresses along the tooth-restoration interface. The study is a continuation of the previous considerations (Kowalczyk and Gambin (2008) [1]), where techniques, which reduce stress concentration at the top of the tooth-restoration interface, were considered. The analysis leads to proposition of new layer forming techniques, which diminish the stress peaks at the interface and prevent the crack propagation process. To find the stress distributions in the dental restoration layers and the tooth tissues the finite element method implemented in the ABAQUS (Simulia, Providence, USA) software is used. For Class I restoration of the premolar tooth, the axisymmetrical model is assumed. The restoration is made of four layers of a photo-cured composite. Between the tooth tissues and the restoration, a layer of bonding agent 0.01mm thick is placed and modeled by FEM with help of the cohesive elements. The assumed model takes into account an influence of changes of elastic properties and viscous effects. For each case of the restoration layers system, the Huber-Mises stresses are analysed. The investigations show that the stresses near the restoration-tooth tissue interface are reduced due to viscous flow of the cured material and due to existence of a thin layer of the bonding agent. However, the stress distribution both, in the restoration and in the tooth tissues, is strongly dependent on a shape of the filling layers. Numerical simulations disclose that stress peaks are located at the top corners of each layer. The top corners of the last layer are the places where microleakage may occur. Stress concentrations at the corners of the preceding layers may lead to a growth of uprising crack. It will be shown that the flat layers in the restoration create relatively high values of the stress peaks. The rounded layers, with shapes close to those used in dental practice, reduce maximal stresses about 40%. According to a common opinion of dentists, the wedge-shaped layers give the best result. In the present paper, another way of the shrinkage stress reduction is proposed. Before the layering, one can cover the surface of the tooth cavity with a thin "pre-layer". Next, the remainder cavity may be filled with flat, rounded or wedged layers. It will be shown, that in the fillings with the pre-layers, stress peaks are reduced up to 75%, with respect to the fillings composed of the rounded layers only. The proposed method considerably reduces the shrinkage stress, both in the tooth restoration, as well as, in the tooth tissues. The fillings with the pre-layer are easy in application and its analysis gives promising results. The pre-layer may be applied with other layers of different shapes, and its thickness may vary. The method is recommended for cavities with a great loss of the tooth tissue.

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

2017-07-01

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.

Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

PubMed

van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

2015-08-12

We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

Surface plasmon optical sensor with enhanced sensitivity using top ZnO thin film

NASA Astrophysics Data System (ADS)

Bao, Ming; Li, Ge; Jiang, Dongmei; Cheng, Wenjuan; Ma, Xueming

2012-05-01

Surface plasmon resonance (SPR) is one of the most sensitive label-free detection methods and has been used in a wide range of chemical and biochemical sensing. Upon using a 200 nm top layer of dielectric film with a high value of the real part ɛ' of the dielectric function, on top of an SPR sensor in the Kretschmann configuration, the sensitivity is improved. The refractive index effect of dielectric film on sensitivity is usually ignored. Dielectric films with different refractive indices were prepared by radio frequency magnetron (RF) sputtering and measured with spectroscopic ellipsometry (SE). The imaginary part ɛ'' of the top nanolayer permittivity needs to be small enough in order to reduce the losses and get sharper dips. The stability of the sensor is also improved because the nanolayer is protecting the Ag film from interacting with the environment. The response curves of the Ag/ZnO chips were obtained by using SPR sensor. Theoretical analysis of the sensitivity of the SPR sensors with different ZnO film refractive indices is presented and studied. Both experimental and simulation results show that the Ag/ZnO films exhibit an enhanced SPR over the pure Ag film with a narrower full width at half maximum (FWHM). It shows that the top ZnO layer is effective in enhancing the surface plasmon resonance and thus its sensitivity.

High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2018-04-01

We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

Leading and Trailing Anvil Clouds of West African Squall Lines

NASA Technical Reports Server (NTRS)

Centrone, Jasmine; Houze, Robert A.

2011-01-01

The anvil clouds of tropical squall-line systems over West Africa have been examined using cloud radar data and divided into those that appear ahead of the leading convective line and those on the trailing side of the system. The leading anvils are generally higher in altitude than the trailing anvil, likely because the hydrometeors in the leading anvil are directly connected to the convective updraft, while the trailing anvil generally extends out of the lower-topped stratiform precipitation region. When the anvils are subdivided into thick, medium, and thin portions, the thick leading anvil is seen to have systematically higher reflectivity than the thick trailing anvil, suggesting that the leading anvil contains numerous larger ice particles owing to its direct connection to the convective region. As the leading anvil ages and thins, it retains its top. The leading anvil appears to add hydrometeors at the highest altitudes, while the trailing anvil is able to moisten a deep layer of the atmosphere.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Piezoelectric Resonator with Two Layers

NASA Technical Reports Server (NTRS)

Stephanou, Philip J. (Inventor); Black, Justin P. (Inventor)

2013-01-01

A piezoelectric resonator device includes: a top electrode layer with a patterned structure, a top piezoelectric layer adjacent to the top layer, a middle metal layer adjacent to the top piezoelectric layer opposite the top layer, a bottom piezoelectric layer adjacent to the middle layer opposite the top piezoelectric layer, and a bottom electrode layer with a patterned structure and adjacent to the bottom piezoelectric layer opposite the middle layer. The top layer includes a first plurality of electrodes inter-digitated with a second plurality of electrodes. A first one of the electrodes in the top layer and a first one of the electrodes in the bottom layer are coupled to a first contact, and a second one of the electrodes in the top layer and a second one of the electrodes in the bottom layer are coupled to a second contact.

Top-down and Bottom-up Approaches in Production of Aqueous Nanocolloids of Low Soluble Drug Paclitaxel

PubMed Central

Pattekari, P.; Zheng, Z.; Zhang, X.; Levchenko, T.; Torchilin, V.

2015-01-01

Nano-encapsulation of poorly soluble anticancer drug was developed with sonication assisted layer-by-layer polyelectrolyte coating (SLbL). We changed the strategy of LbL-encapsulation from making microcapsules with many layers in the walls for encasing highly soluble materials to using very thin polycation / polyanion coating on low soluble nanoparticles to provide their good colloidal stability. SLbL encapsulation of paclitaxel resulted in stable 100-200 nm diameter colloids with high electrical surface ξ-potential (of -45 mV) and drug content in the nanoparticles of 90 wt %. In the top-down approach, nanocolloids were prepared by rupturing powder of paclitaxel using ultrasonication and simultaneous sequential adsorption of oppositely charged biocompatible polyelectrolytes. In the bottom-up approach paclitaxel was dissolved in organic solvent (ethanol or acetone), and drug nucleation was initiated by gradual worsening the solution with the addition of aqueous polyelectrolyte assisted by ultrasonication. Paclitaxel release rates from such nanocapsules were controlled by assembling multilayer shells with variable thicknesses and are in the range of 10-20 hours. PMID:21442095

Design of co-existence parallel periodic surface structure induced by picosecond laser pulses on the Al/Ti multilayers

NASA Astrophysics Data System (ADS)

Petrović, Suzana; Peruško, D.; Kovač, J.; Panjan, P.; Mitrić, M.; Pjević, D.; Kovačević, A.; Jelenković, B.

2017-09-01

Formation of periodic nanostructures on the Ti/5x(Al/Ti)/Si multilayers induced by picosecond laser pulses is studied in order to better understand the formation of a laser-induced periodic surface structure (LIPSS). At fluence slightly below the ablation threshold, the formation of low spatial frequency-LIPSS (LSFL) oriented perpendicular to the direction of the laser polarization is observed on the irradiated area. Prolonged irradiation while scanning results in the formation of a high spatial frequency-LIPSS (HSFL), on top of the LSFLs, creating a co-existence parallel periodic structure. HSFL was oriented parallel to the incident laser polarization. Intermixing between the Al and Ti layers with the formation of Al-Ti intermetallic compounds was achieved during the irradiation. The intermetallic region was formed mostly within the heat affected zone of the sample. Surface segregation of aluminium with partial ablation of the top layer of titanium was followed by the formation of an ultra-thin Al2O3 film on the surface of the multi-layered structure.

Nanostructured Sublayers for Improved Light Extraction of Top-Emitting and Transparent Organic Electroluminescent Devices

DTIC Science & Technology

2007-05-01

luminous efficiency and wider color gamut . In addition, organic phosphorescent light emitting materials and devices were studied. 15. SUBJECT TERMS...nanostructured Bragg mirrors provided an improved external luminous efficiency and wide color gamut , which will be an essential part of future flat-panel...layers (usually with an ultra-thin shadow mask) or the fabrication of anodes with variable thickness have been used to achieve enhanced color gamut

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

PubMed Central

Ning, Honglong; Chen, Jianqiu; Fang, Zhiqiang; Tao, Ruiqiang; Cai, Wei; Yao, Rihui; Hu, Shiben; Zhu, Zhennan; Zhou, Yicong; Yang, Caigui; Peng, Junbiao

2017-01-01

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance. PMID:28772410

Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

PubMed Central

Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

2018-01-01

Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

Evidence of Formation of Superdense Nonmagnetic Cobalt.

PubMed

Banu, Nasrin; Singh, Surendra; Satpati, B; Roy, A; Basu, S; Chakraborty, P; Movva, Hema C P; Lauter, V; Dev, B N

2017-02-03

Because of the presence of 3d transition metals in the Earth's core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a dense face-centred-cubic phase of cobalt, which would be nonmagnetic. However, this dense nonmagnetic cobalt has not yet been observed. Recent investigations in thin film polycrystalline materials have shown the formation of compressive stress, which can increase the density of materials. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.2-1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, and corroborated by polarized neutron reflectometry (PNR) experiments. Transmission electron microscopy provides further evidence. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers near the top of the film and at the film-substrate interface are nonmagnetic. The major part of the Co film has the usual density and magnetic moment. These results indicate the possibility of existence of nonmagnetic Co in the earth's core under high pressure.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

PubMed

Ning, Honglong; Chen, Jianqiu; Fang, Zhiqiang; Tao, Ruiqiang; Cai, Wei; Yao, Rihui; Hu, Shiben; Zhu, Zhennan; Zhou, Yicong; Yang, Caigui; Peng, Junbiao

2017-01-10

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm²·V -1 ·s -1 and an on/off current ratio of over 10⁵. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

Finite element stress analysis of idealized composite damage zones

NASA Technical Reports Server (NTRS)

Obrien, D.; Herakovich, C. T.

1978-01-01

A quasi three dimensional finite element stress analysis of idealized damage zones in composite laminates is presented. The damage zones consist of a long centered groove or cutout extending one or two layers in depth from both top and bottom surfaces of a thin composite laminate. Elastic results are presented for compressive loading of four and eight layer laminates. It is shown that a boundary layer exists near the cutout edge similar to that previously shown to exist along free edges. The cutout is shown to produce significant interlaminar stresses in the interior of the laminate away from free cutout edges. The interlaminar stresses are also shown to contribute to failure which is defined using the Tsai-Wu failure criteria.

MEMS switches having non-metallic crossbeams

NASA Technical Reports Server (NTRS)

Scardelletti, Maximillian C (Inventor)

2009-01-01

A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

NASA Astrophysics Data System (ADS)

Desta, Derese; Ram, Sanjay K.; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R.; Jensen, Pia B.; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N.; Balling, Peter; Larsen, Arne Nylandsted

2016-06-01

A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

High-sensitivity GMR with low coercivity in top-IrMn spin-valves

NASA Astrophysics Data System (ADS)

Liu, H. R.; Qu, B. J.; Ren, T. L.; Liu, L. T.; Xie, H. L.; Li, C. X.; Ku, W. J.

2003-12-01

Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180 Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films.

Improved efficiency of perovskite-silicon tandem solar cell near the matched optical absorption between the subcells

NASA Astrophysics Data System (ADS)

Iftiquar, S. M.; Jung, Junhee; Yi, Junsin

2017-10-01

Current matching in a tandem solar cell is significant, because in a mismatched device the lowest current generating subcell becomes the current limiting component, and overall device efficiency remains lower than that could be obtained in the current matched device. Recent reports on methyl ammonium lead iodide (MAPbI3) based thin film solar cell has drawn interest to a perovskite-silicon tandem solar cell. Therefore, we investigated such a tandem solar cell theoretically. We used a MAPbI3 based top and heterojunction with intrinsic thin layer silicon (HIT) bottom subcell. Optimization of the device structure was carried out by varying thickness of perovskite layer of top-cell from 50 to 1000 nm, while thickness of active layer of the HIT cell was kept constant, to 500 µm. Single-junction solar cell, formed with the bottom subcell had open circuit voltage (V oc) of 705.1 mV, short circuit current density (J sc) of 28.22 mA cm-2, fill factor (FF) of 0.82 and efficiency of 16.4% under AM1.5G insolation. A relatively low thickness (150 nm) of the perovskite absorber layer was found optimum for the top-subcell to achieve best efficiency of the tandem cell, partly because of intermediate reflection at the interface between the two cells. We obtained a maximum of 20.92% efficiency of the tandem solar cell, which is higher by a factor of 1.27 from the starting HIT cell and a factor 1.47 higher from the perovskite cell efficiency. J sc of the optimized tandem cell was 13.06 mA cm-2. This was achieved near the matching optical absorption or current-density of the component subcells. For a practical application, the device used in our investigation was without textured front surface. An ordinary HIT bottom-cell was used with lower J sc. Therefore, with an improved HIT subcell, efficiency of the tandem cell, higher than 21% will be achievable.

Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-27

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Surface plasmon-assisted microscope.

PubMed

Borejdo, Julian; Gryczynski, Zygmunt; Fudala, Rafal; Joshi, Chaitanya R; Borgmann, Kathleen; Ghorpade, Anuja; Gryczynski, Ignacy

2018-06-01

Total internal reflection microscopy (TIRF) has been a powerful tool in biological research. The most valuable feature of the method has been the ability to image 100- to 200-nm-thick layer of cell features adjacent to a coverslip, such as membrane lipids, membrane receptors, and structures proximal-to-basal membranes. Here, we demonstrate an alternative method of imaging thin-layer proximal-to-basal membranes by placing a sample on a high refractive index coverslip covered by a thin layer of gold. The sample is illuminated using the Kretschmann method (i.e., from the top to an aqueous medium). Fluorophores that are close to the metal surface induce surface plasmons in the metal film. Fluorescence from fluorophores near the metal surface couple with surface plasmons allowing them to penetrate the metal surface and emerge at a surface plasmon coupled emission angle. The thickness of the detection layer is further reduced in comparison with TIRF by metal quenching of fluorophores at a close proximity (below 10 nm) to a surface. Fluorescence is collected by a high NA objective and imaged by EMCCD or converted to a signal by avalanche photodiode fed by a single-mode optical fiber inserted in the conjugate image plane of the objective. The system avoids complications of through-the-objective TIRF associated with shared excitation and emission light path, has thin collection thickness, produces excellent background rejection, and is an effective method to study molecular motion. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Characterizing the structure of topological insulator thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue

2015-08-01

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb){sub 2}Te{sub 3} and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO{sub 3} and the use of capping layers to protect topological insulator films frommore » oxidation and exposure.« less

Method for manufacturing electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1988-11-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

Titanium modified with layer-by-layer sol-gel tantalum oxide and an organodiphosphonic acid: a coating for hydroxyapatite growth.

PubMed

Arnould, C; Volcke, C; Lamarque, C; Thiry, P A; Delhalle, J; Mekhalif, Z

2009-08-15

Titanium and its alloys are widely used in surgical implants due to their appropriate properties like corrosion resistance, biocompatibility, and load bearing. Unfortunately when metals are used for orthopedic and dental implants there is the possibility of loosening over a long period of time. Surface modification is a good way to counter this problem. A thin tantalum oxide layer obtained by layer-by-layer (LBL) sol-gel deposition on top of a titanium surface is expected to improve biocorrosion resistance in the body fluid, biocompatibility, and radio-opacity. This elaboration step is followed by a modification of the tantalum oxide surface with an organodiphosphonic acid self-assembled monolayer, capable of chemically binding to the oxide surface, and also improving hydroxyapatite growth. The different steps of this proposed process are characterized by surfaces techniques like contact angle, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Effective reduction of the coercivity for Co72Pt28 thin film by exchange coupled Co81Ir19 soft layer with negative magnetocrystalline anisotropy

NASA Astrophysics Data System (ADS)

Jiao, J. Y.; Ma, T. Y.; Li, Z. W.; Qiao, L.; Wang, Y.; Wang, T.; Li, F. S.

2018-02-01

We report on the investigation of coercivity changes of the Co72Pt28/Co81Ir19 exchange-coupled composite (ECC) media with negative soft-layer (SL) magnetocrystalline anisotropy (MA). Our results show that the hard-layer (HL) of our sample exhibits a columnar type microstructure with well isolated grains and the SL with hcp-structure grows on top of the HL with the same texture. Therefore, strong coupling of the two layers have been realized as evidenced by the magnetic characterization. Importantly, we observe a more effective reduction of the coercivity of the ECC media by using SLs with negative MA when compared to the use of SLs with positive or negligible MA. The experimental results are corroborated by theoretical calculations.

A large-scale field trial of thin-layer capping of PCDD/F-contaminated sediments: Sediment-to-water fluxes up to 5 years post-amendment.

PubMed

Cornelissen, Gerard; Schaanning, Morten; Gunnarsson, Jonas S; Eek, Espen

2016-04-01

The longer-term effect (3-5 y) of thin-layer capping on in situ sediment-to-surface water fluxes was monitored in a large-scale field experiment in the polychlorinated dibenzodioxin and dibenzofuran (PCDD/F) contaminated Grenlandfjords, Norway (4 trial plots of 10,000 to 40,000 m(2) at 30 to 100 m water depth). Active caps (designed thickness 2.5 cm) were established in 2 fjords, consisting of dredged clean clay amended with powdered activated carbon (PAC) from anthracite. These active caps were compared to 2 nonactive caps in one of the fjords (designed thickness 5 cm) consisting of either clay only (i.e., without PAC) or crushed limestone. Sediment-to-water PCDD/F fluxes were measured in situ using diffusion chambers. An earlier study showed that during the first 2 years after thin-layer capping, flux reductions relative to noncapped reference fields were more extensive at the fields capped with nonactive caps (70%-90%) than at the ones with PAC-containing caps (50%-60%). However, the present work shows that between 3 and 5 years after thin-layer capping, this trend was reversed and cap effectiveness in reducing fluxes was increasing to 80% to 90% for the PAC caps, whereas cap effectiveness of the nonactive caps decreased to 20% to 60%. The increasing effectiveness over time of PAC-containing "active" caps is explained by a combination of slow sediment-to-PAC mass transfer of PCDD/Fs and bioturbation by benthic organisms. The decreasing effectiveness of "nonactive" limestone and clay caps is explained by deposition of contaminated particles on top of the caps. The present field data indicate that the capping efficiency of thin active caps (i.e., enriched with PAC) can improve over time as a result of slow diffusive PCDD/F transfer from sediment to PAC particles and better mixing of the PAC by bioturbation. © 2015 SETAC.

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

PubMed

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

PubMed Central

2011-01-01

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

Catalytic Destruction of Chlorinated Volatile Organic Compounds

DTIC Science & Technology

1993-08-01

Figure 1. The glass reactor passed through two furnaces. Both the furnaces were Lindberg 55035 hinged tube type. The top furnace served the purpose...10. HC1 Scrubber 10 11 12 11 13 11. Thermocouples 12. Manometer Tap 13. Glass Wool Figure 1. Schematic of the Reactor were used to check the...In the case of catalyst pellets, a thin layer of glass wool was used to hold the bed in place. The chlorinated hydrocarbon feed was introduced into

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

NASA Technical Reports Server (NTRS)

Woodworth, Andrew; Chen, Liangyu

2017-01-01

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

Thin Sheet Modeling for the Seismogenic Crust of Western North America: How Strong is the top Slice of "Sandwich Bread" Above the "Jelly"?

NASA Astrophysics Data System (ADS)

Klein, E. C.; Holt, W. E.; Flesch, L. M.; Haines, A. J.

2006-12-01

The "jelly sandwich" and "crème brûlée" models divides continental lithosphere into distinct rheological layers. Dynamic models from thin sheet approximations provide estimates of the total strength of the lithosphere, but only to a thickness governed by the degree of mechanical coupling between rheological layers. If either the "jelly sandwich" or the "crème brûlée" model of the lithosphere is appropriate for the diffuse plate boundary zone setting of western North America, we expect a sharp contrast or decoupling between the strong upper crust ("bread") layer overlying the weak lower crustal ("jelly") layer. We examine the strength of the upper crust with and without strength contribution from the lower crust using thin sheet modeling methodologies. We use seismically defined densities to constrain vertical integrals of vertical stress (GPE) within the crust. Neglecting stresses due to flexure as well as shear stresses at the base of the crustal layer, lateral differences in GPE within the layer, are balanced solely by gradients in horizontal deviatoric stress [Flesch et al., 2001, 2006]. We solve the force-balance equations for the minimum deviatoric stress field associated with gradients of GPE. This deviatoric stress field calibrates the magnitude of deviatoric stresses within the seismogenic layer. We then solve for stress field boundary conditions associated with the stress field contributions from sources outside the modeled region that together with the minimum solution from GPE differences provide a best match with stress field indicators within western North America. In order to infer appropriate stress field indicators we develop a long-term kinematic strain rate and velocity field model. Where we use this strain rate field we assume that the relationship between deviatoric stress directions and kinematic strain rate directions is isotropic. In our calculations the seismogenic layer extends from the surface to either a uniform depth below sea level or to a variable depth below sea level constrained by heat flow. For the case of a long-term seismogenic layer with a uniform base 20 km below sea level, the long-term vertically integrated deviatoric stress magnitudes range between 0.05-0.75x10^{12} N/m, while the long-term vertically integrated strength magnitudes of the layer are of the order of 0.05-1.5x10^{12} N/m. These strength values constrain low long-term friction coefficients of 0.02-0.30 under hydrostatic to wet conditions in the Basin and Range region. We test the sensitivity of our solutions to different assumed brittle-ductile transition depths and find that coefficients of friction on faults, along with magnitudes of vertically integrated strength, are relatively insensitive to these assumed layer thicknesses. Moreover, through this sensitivity modeling we find evidence that our assumption of decoupling is valid for most of the Basin and Range region in that we find evidence for diminishing contributions to crustal strength with depth. We model the interface between the upper and lower crust by parameterization of a variable seismogenic thickness in the thin sheet equations. This allows us to estimate the strength of the top slice of "bread" without the incorporation of any "jelly". We find that most of the long-term strength of the crust within the diffuse plate boundary zone of western North America resides in the seismogenic layer of the upper crust.

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process.

PubMed

Blázquez, O; Martín, G; Camps, I; Mariscal, A; López-Vidrier, J; Ramírez, J M; Hernández, S; Estradé, S; Peiró, F; Serna, R; Garrido, B

2018-06-08

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole-Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiazadeh, Asal; Universidade do Algarve, FCT, 8000-139 Faro; Gomes, Henrique L.

The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not onlymore » the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.« less

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

NASA Astrophysics Data System (ADS)

Blázquez, O.; Martín, G.; Camps, I.; Mariscal, A.; López-Vidrier, J.; Ramírez, J. M.; Hernández, S.; Estradé, S.; Peiró, F.; Serna, R.; Garrido, B.

2018-06-01

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole‑Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

Silicon algae with carbon topping as thin-film anodes for lithium-ion microbatteries by a two-step facile method

NASA Astrophysics Data System (ADS)

Biserni, E.; Xie, M.; Brescia, R.; Scarpellini, A.; Hashempour, M.; Movahed, P.; George, S. M.; Bestetti, M.; Li Bassi, A.; Bruno, P.

2015-01-01

Silicon-based electrodes for Li-ion batteries (LIB) attract much attention because of their high theoretical capacity. However, their large volume change during lithiation results in poor cycling due to mechanical cracking. Moreover, silicon can hardly form a stable solid electrolyte interphase (SEI) layer with common electrolytes. We present a safe, innovative strategy to prepare nanostructured silicon-carbon anodes in a two-step process. The nanoporosity of Si films accommodates the volume expansion while a disordered graphitic C layer on top promotes the formation of a stable SEI. This approach shows its promises: carbon-coated porous silicon anodes perform in a very stable way, reaching the areal capacity of ∼175 μAh cm-2, and showing no decay for at least 1000 cycles. With requiring only a two-step deposition process at moderate temperatures, this novel very simple cell concept introduces a promising way to possibly viable up-scaled production of next-generation nanostructured Si anodes for lithium-ion microbatteries.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Modeling and stabilization results for a charge or current-actuated active constrained layer (ACL) beam model with the electrostatic assumption

NASA Astrophysics Data System (ADS)

Özer, Ahmet Özkan

2016-04-01

An infinite dimensional model for a three-layer active constrained layer (ACL) beam model, consisting of a piezoelectric elastic layer at the top and an elastic host layer at the bottom constraining a viscoelastic layer in the middle, is obtained for clamped-free boundary conditions by using a thorough variational approach. The Rao-Nakra thin compliant layer approximation is adopted to model the sandwich structure, and the electrostatic approach (magnetic effects are ignored) is assumed for the piezoelectric layer. Instead of the voltage actuation of the piezoelectric layer, the piezoelectric layer is proposed to be activated by a charge (or current) source. We show that, the closed-loop system with all mechanical feedback is shown to be uniformly exponentially stable. Our result is the outcome of the compact perturbation argument and a unique continuation result for the spectral problem which relies on the multipliers method. Finally, the modeling methodology of the paper is generalized to the multilayer ACL beams, and the uniform exponential stabilizability result is established analogously.

Polymeric check valve with an elevated pedestal for precise cracking pressure in a glaucoma drainage device.

PubMed

Park, Chang-Ju; Yang, Dong-Seong; Cha, Jung-Joon; Lee, Jong-Hyun

2016-02-01

This paper presents the design, fabrication, and characterization of a polymeric micro check valve for a glaucoma drainage device (GDD) featuring the precise regulation of intraocular pressure (IOP) and effective aqueous humor turnover (AHT). The pedestal, slightly elevated by selective coating of a parylene C film, induces pre-stress in the thin valve membrane, which enhances the predictability of the cracking pressure of the GDD. The proposed GDD comprises a cannula and a normally closed polymeric micro check valve, which are made of PDMS, a biocompatible polymer, with three layers: top (cover), intermediate (thin valve membrane), and bottom (base plate). A feedback channel, located between the top and intermediate layers, prevents reverse flow by feeding the pressure of the outlet channel back to the thin valve membrane. To achieve a precise cracking pressure and sufficient drainage of humor for humans, the thicknesses of the valve membrane and parylene C film are designed to be 58 μm and 1 μm, respectively, which are confirmed using a COMSOL simulation. The experimental results show that the cracking pressure of the fabricated GDD lies within the range of normal IOP (1.33-2.67 kPa). The forward flow rate (drainage rate), 4.3 ± 0.9 μL/min at 2.5 kPa, is adequate to accommodate the rate of AHT in a normal human eye (2.4 ± 0.6 μL/min). The reverse flow was not observed when a hydrostatic pressure of up to 4 kPa was applied to the outlet and the feedback channel.

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Coupling of carboxylic groups onto the surface of polystyrene parts during fused filament fabrication

NASA Astrophysics Data System (ADS)

Nagel, Jürgen; Zimmermann, Philipp; Schubert, Oliver; Simon, Frank; Schlenstedt, Kornelia

2017-11-01

A method for the fabrication of polystyrene parts, modified with carboxylic groups during Fused Filament Fabrication (FFF), is being introduced. This method is based on the application of a thin layer of a reactive polymer carrying carboxylic groups on a substrate surface. A polystyrene film is printed on top of this layer. During contact between the hot melt and the reactive layer, a Friedel-Crafts type acylation using a green catalyst takes place, which attaches the reactive polymer to the polystyrene surface. The modified surface is homogeneous, hydrophilic and able to bind copper ions. The method could be used to fabricate unique parts of polystyrene with tailored surface functionalisation. It could be applied for laboratory use, e.g. for the manufacture of lab-on-a-chip devices.

Ex situ and in situ characterization of patterned photoreactive thin organic surface layers using friction force microscopy

PubMed Central

Shen, Quan; Edler, Matthias; Griesser, Thomas; Knall, Astrid-Caroline; Trimmel, Gregor; Kern, Wolfgang; Teichert, Christian

2014-01-01

Photolithographic methods allow an easy lateral top-down patterning and tuning of surface properties with photoreactive molecules and polymers. Employing friction force microscopy (FFM), we present here different FFM-based methods that enable the characterization of several photoreactive thin organic surface layers. First, three ex situ methods have been evaluated for the identification of irradiated and non-irradiated zones on the same organosilane sample by irradiation through different types of masks. These approaches are further extended to a time dependent ex situ FFM measurement, which allows to study the irradiation time dependent evolution of the resulting friction forces by sequential irradiation through differently sized masks in crossed geometry. Finally, a newly designed in situ FFM measurement, which uses a commercial bar-shaped cantilever itself as a noncontact shadow mask, enables the determination of time dependent effects on the surface modification during the photoreaction. SCANNING 36:590–598, 2014. PMID:25183629

High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask.

PubMed

Hossain, Md Nazmul; Justice, John; Lovera, Pierre; McCarthy, Brendan; O'Riordan, Alan; Corbett, Brian

2014-09-05

Wafer-scale nano-fabrication of silicon nitride (Si x N y ) photonic crystal (PhC) structures on glass (quartz) substrates is demonstrated using a thin (30 nm) chromium (Cr) layer as the hard mask for transferring the electron beam lithography (EBL) defined resist patterns. The use of the thin Cr layer not only solves the charging effect during the EBL on the insulating substrate, but also facilitates high aspect ratio PhCs by acting as a hard mask while deep etching into the Si x N y . A very high aspect ratio of 10:1 on a 60 nm wide grating structure has been achieved while preserving the quality of the flat top of the narrow lines. The presented nano-fabrication method provides PhC structures necessary for a high quality optical response. Finally, we fabricated a refractive index based PhC sensor which shows a sensitivity of 185 nm per RIU.

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

PubMed

Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

2014-04-23

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer Bi2Se3

NASA Astrophysics Data System (ADS)

Li, Zhongjun; Chen, Shi; Sun, Jiuyu; Li, Xingxing; Qiu, Huaili; Yang, Jinlong

2018-02-01

Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of Bi2Se3 thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend. On the other hand, as thickness increases, the coupling interaction shows a disproportionate decrease trend. Moreover, the system with 3 QLs exhibits stronger interaction than that with 2 QLs. The presence of coupling interaction would suppress destructive interference of surface states and enhance resistance in various degrees. In view of the inversely proportional relation to transport channel width, the resistance of thin films should show disproportionate thickness dependence. This prediction is qualitatively consistent with the transport measurements at low temperature. Furthermore, the optical properties also exhibit obvious thickness dependence. Especially as the thickness increases, the coupling interaction results in red and blue shifts of the multiple-peak structures in low and high energy regions of imaginary dielectric function, respectively. The red shift trend is in agreement with the recent experimental observation and the blue shift is firstly predicted by the present calculation. The present results give a concrete understanding of transport and optical properties in devices based on Bi2Se3 thin films with few QLs.

Design and simulation of multi-color infrared CMOS metamaterial absorbers

NASA Astrophysics Data System (ADS)

Cheng, Zhengxi; Chen, Yongping; Ma, Bin

2016-05-01

Metamaterial electromagnetic wave absorbers, which usually can be fabricated in a low weight thin film structure, have a near unity absorptivity in a special waveband, and therefore have been widely applied from microwave to optical waveband. To increase absorptance of CMOS MEMS devices in 2-5 μmm waveband, multi-color infrared metamaterial absorbers are designed with CSMC 0.5 μmm 2P3M and 0.18 μmm 1P6M CMOS technology in this work. Metal-insulator-metal (MIM) three-layer MMAs and Insulator-metal-insulator-metal (MIMI) four-layer MMAs are formed by CMOS metal interconnect layers and inter metal dielectrics layer. To broaden absorption waveband in 2-5μmm range, MMAs with a combination of different sizes cross bars are designed. The top metal layer is a periodic aluminum square array or cross bar array with width ranging from submicron to several microns. The absorption peak position and intensity of MMAs can be tuned by adjusting the top aluminum micro structure array. Post-CMOS process is adopted to fabricate MMAs. The infrared absorption spectra of MMAs are verified with finite element method simulation, and the effects of top metal structure sizes, patterns, and films thickness are also simulated and intensively discussed. The simulation results show that CMOS MEMS MMAs enhance infrared absorption in 2-20 μmm. The MIM broad MMA has an average absorptance of 0.22 in 2-5 μmm waveband, and 0.76 in 8-14 μm waveband. The CMOS metamaterial absorbers can be inherently integrated in many kinds of MEMS devices fabricated with CMOS technology, such as uncooled bolometers, infrared thermal emitters.

Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

NASA Astrophysics Data System (ADS)

Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

2016-07-01

We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

ITO/metal/ITO anode for efficient transparent white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Joo, Chul Woong; Lee, Jonghee; Sung, Woo Jin; Moon, Jaehyun; Cho, Nam Sung; Chu, Hye Yong; Lee, Jeong-Ik

2015-02-01

We report on the characteristics of enhanced and balanced white-light emission of transparent organic light emitting diodes (TOLEDs) by introducing anode that has a stack structure of ITO/metal/ITO (IMI). We have investigated an anode that has a stack structure of IMI. IMI anodes are typically composed of a thin Ag layer (˜15 nm) sandwiched between two ITO layers (˜50 nm). By inserting an Ag layer it was possible to achieve sheet resistance lower than 3 Ω/sq. and transmittance of 86% at a wavelength of 550 nm. The Ag insert can act as a reflective component. With its counterpart, a transparent cathode made of a thin Ag layer (˜15 nm), micro-cavities (MC) can be effectively induced in the OLED, leading to improved performance. Using an IMI anode, it was possible to significantly increase the current efficiencies. The current efficiencies of the top and the bottom of the IMI TOLED increased to 23.0 and 15.6 cd/A, respectively, while those of the white TOLED with the ITO anode were 20.7 and 5.1 cd/A, respectively. A 30% enhancement in the overall current efficiency was achieved by taking advantage of the MC effect and the low sheet resistance.

HUBBLE CAPTURES DETAILED IMAGE OF URANUS' ATMOSPHERE

NASA Technical Reports Server (NTRS)

2002-01-01

Hubble Space Telescope has peered deep into Uranus' atmosphere to see clear and hazy layers created by a mixture of gases. Using infrared filters, Hubble captured detailed features of three layers of Uranus' atmosphere. Hubble's images are different from the ones taken by the Voyager 2 spacecraft, which flew by Uranus 10 years ago. Those images - not taken in infrared light - showed a greenish-blue disk with very little detail. The infrared image allows astronomers to probe the structure of Uranus' atmosphere, which consists of mostly hydrogen with traces of methane. The red around the planet's edge represents a very thin haze at a high altitude. The haze is so thin that it can only be seen by looking at the edges of the disk, and is similar to looking at the edge of a soap bubble. The yellow near the bottom of Uranus is another hazy layer. The deepest layer, the blue near the top of Uranus, shows a clearer atmosphere. Image processing has been used to brighten the rings around Uranus so that astronomers can study their structure. In reality, the rings are as dark as black lava or charcoal. This false color picture was assembled from several exposures taken July 3, 1995 by the Wide Field Planetary Camera-2. CREDIT: Erich Karkoschka (University of Arizona Lunar and Planetary Lab) and NASA

Screen printed silver top electrode for efficient inverted organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Junwoo; Duraisamy, Navaneethan; Lee, Taik-Min

2015-10-15

Highlights: • Screen printing of silver pattern. • X-ray diffraction pattern confirmed the face centered cubic structure of silver. • Uniform surface morphology of silver pattern with sheet resistance of 0.06 Ω/sq. • The power conversion efficiency of fabricated solar cell is found to be 2.58%. - Abstract: The present work is mainly focused on replacement of the vacuum process for top electrode fabrication in organic solar cells. Silver top electrode deposited through solution based screen printing on pre-deposited polymeric thin film. The solution based printing technology provides uniform top electrode without damaging the underlying organic layers. The surface crystallinitymore » and surface morphology of silver top electrode are examined through X-ray diffraction, field-emission scanning electron microscope and atomic force microscope. The purity of silver is examined through X-ray energy dispersive spectroscopy. The top electrode exhibits face centered cubic structure with homogeneous morphology. The sheet resistance of top electrode is found to be 0.06 Ω/sq and an average pattern thickness of ∼15 μm. The power conversion efficiency is 2.58%. Our work demonstrates that the solution based screen printing is a significant role in the replacement of vacuum process for the fabrication of top electrode in organic solar cells.« less

Periodic domain inversion in x-cut single-crystal lithium niobate thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mackwitz, P., E-mail: peterm@mail.upb.de; Rüsing, M.; Berth, G.

2016-04-11

We report the fabrication of periodically poled domain patterns in x-cut lithium niobate thin-film. Here, thin films on insulator have drawn particular attention due to their intrinsic waveguiding properties offering high mode confinement and smaller devices compared to in-diffused waveguides in bulk material. In contrast to z-cut thin film lithium niobate, the x-cut geometry does not require back electrodes for poling. Further, the x-cut geometry grants direct access to the largest nonlinear and electro-optical tensor element, which overall promises smaller devices. The domain inversion was realized via electric field poling utilizing deposited aluminum top electrodes on a stack of LNmore » thin film/SiO{sub 2} layer/Bulk LN, which were patterned by optical lithography. The periodic domain inversion was verified by non-invasive confocal second harmonic microscopy. Our results show domain patterns in accordance to the electrode mask layout. The second harmonic signatures can be interpreted in terms of spatially, overlapping domain filaments which start their growth on the +z side.« less

Thin film photovoltaic panel and method

DOEpatents

Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

1991-06-11

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Improved Adhesion of Gold Thin Films Evaporated on Polymer Resin: Applications for Sensing Surfaces and MEMS

PubMed Central

Moazzez, Behrang; O'Brien, Stacey M.; Merschrod S., Erika F.

2013-01-01

We present and analyze a method to improve the morphology and mechanical properties of gold thin films for use in optical sensors or other settings where good adhesion of gold to a substrate is of importance and where controlled topography/roughness is key. To improve the adhesion of thermally evaporated gold thin films, we introduce a gold deposition step on SU-8 photoresist prior to UV exposure but after the pre-bake step of SU-8 processing. Shrinkage and distribution of residual stresses, which occur during cross-linking of the SU-8 polymer layer in the post-exposure baking step, are responsible for the higher adhesion of the top gold film to the post-deposition cured SU-8 sublayer. The SU-8 underlayer can also be used to tune the resulting gold film morphology. Our promoter-free protocol is easily integrated with existing sensor microfabrication processes. PMID:23760086

Early to middle Jurassic salt in Baltimore Canyon trough

USGS Publications Warehouse

McKinney, B. Ann; Lee, Myung W.; Agena, Warren F.; Poag, C. Wylie

2005-01-01

A pervasive, moderately deep (5-6 s two-way traveltime), high-amplitude reflection is traced on multichannel seismic sections over an approximately 7500 km² area of Baltimore Canyon Trough. The layer associated with the reflection is about 25 km wide, about 60 m thick in the center, and thins monotonically laterally, though asymmetrically, at the edges. Geophysical characteristics are compatible with an interpretation of this negative-polarity reflector as a salt lens deposited on the top of a synrift evaporite sequence. However, alternative interpretations of the layer as gas-saturated sediments, an overpressured shale, or a weathered igneous intrusion are also worthy of consideration.Geophysical analyses were made on three wavelet- and true-amplitude processed multichannel seismic dip lines. The lens-shaped layer demarked by the reflection has a velocity of 4.4 km/s; the lens lies within strata having velocities of 5.3 to 5.7 km/s. A trough marking the onset of the lens has an amplitude that is 10 to 20 db greater than reflections from the encasing layers and an apparent reflection coefficient of -0.24. Using amplitude versus offset analysis methods, we determined that observed reflection coefficients, though variable, decrease consistently with respect to increasing offset. Linear inversion yields a low density, about 2.2 g/cc. Integration of one of the true-amplitude-processed lines and one-dimensional modeling of the layer provide data on the impedance contrast and interference patterns that further reinforce the salt lens interpretation.The thin, horizontal salt lens was probably deposited or precipitated during the Jurassic in a shallow, narrow (peripheral) rift basin, as rifting progressed down the North Atlantic margin. Unlike thicker deposits in other areas that deformed and flowed, often into diapir structures, this thin lens has remained relatively undisturbed since deposition.

Plasma-assisted oxide removal from ruthenium-coated EUV optics

NASA Astrophysics Data System (ADS)

Dolgov, A.; Lee, C. J.; Bijkerk, F.; Abrikosov, A.; Krivtsun, V. M.; Lopaev, D.; Yakushev, O.; van Kampen, M.

2018-04-01

An experimental study of oxide reduction at the surface of ruthenium layers on top of multilayer mirrors and thin Ru/Si films is presented. Oxidation and reduction processes were observed under conditions close to those relevant for extreme ultraviolet lithography. The oxidized ruthenium surface was exposed to a low-temperature hydrogen plasma, similar to the plasma induced by extreme ultraviolet radiation. The experiments show that hydrogen ions are the main reducing agent. Furthermore, the addition of hydrogen radicals increases the reduction rate beyond that expected from simple flux calculations. We show that low-temperature hydrogen plasmas can be effective for reducing oxidized top surfaces. Our proof-of-concept experiments show that an in situ, EUV-generated plasma cleaning technology is feasible.

Modeling the Conducting Stably-Stratified Layer of the Earth's Core

NASA Astrophysics Data System (ADS)

Petitdemange, L.; Philidet, J.; Gissinger, C.

2017-12-01

Observations of the Earth magnetic field as well as recent theoretical works tend to show that the Earth's outer liquid core is mostly comprised of a convective zone in which the Earth's magnetic field is generated - likely by dynamo action -, but also features a thin, stably stratified layer at the top of the core.We carry out direct numerical simulations by modeling this thin layer as an axisymmetric spherical Couette flow for a stably stratified fluid embedded in a dipolar magnetic field. The dynamo region is modeled by a conducting inner core rotating slightly faster than the insulating mantle due to magnetic torques acting on it, such that a weak differential rotation (low Rossby limit) can develop in the stably stratified layer.In the case of a non-stratified fluid, the combined action of the differential rotation and the magnetic field leads to the well known regime of `super-rotation', in which the fluid rotates faster than the inner core. Whereas in the classical case, this super-rotation is known to vanish in the magnetostrophic limit, we show here that the fluid stratification significantly extends the magnitude of the super-rotation, keeping this phenomenon relevant for the Earth core. Finally, we study how the shear layers generated by this new state might give birth to magnetohydrodynamic instabilities or waves impacting the secular variations or jerks of the Earth's magnetic field.

The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrider, Keegan J.; Yalisove, Steven M.; Torralva, Ben

2015-09-21

The dynamics of femtosecond laser removal of 20 nm Ni films on glass substrates was studied using time-resolved pump-probe microscopy. 20 nm thin films exhibit removal at two distinct threshold fluences, removal of the top 7 nm of Ni above 0.14 J/cm{sup 2}, and removal of the entire 20 nm film above 0.36 J/cm{sup 2}. Previous work shows the top 7 nm is removed through liquid spallation, after irradiation the Ni melts and rapidly expands leading to tensile stress and cavitation within the Ni film. This work shows that above 0.36 J/cm{sup 2} the 20 nm film is removed in two distinct layers, 7 nm and 13 nm thick. The topmore » 7 nm layer reaches a speed 500% faster than the bottom 13 nm layer at the same absorbed fluence, 500–2000 m/s and 300–700 m/s in the fluence ranges studied. Significantly different velocities for the top 7 nm layer and bottom 13 nm layer indicate removal from an interface occurs by a different physical mechanism. The method of measuring film displacement from the development of Newton's rings was refined so it could be shown that the 13 nm layer separates from the substrate within 70 ps and accelerates to its final velocity within several hundred picoseconds. We propose that removal of the bottom 13 nm is consistent with heterogeneous nucleation and growth of vapor at the Ni-glass interface, but that the rapid separation and acceleration of the 13 nm layer from the Ni-glass interface requires consideration of exotic phases of Ni after excitation.« less

Fabrication of all-carbon nanotube electronic devices on flexible substrates through CVD and transfer methods.

PubMed

Zou, Yuan; Li, Qunqing; Liu, Junku; Jin, Yuanhao; Qian, Qingkai; Jiang, Kaili; Fan, Shoushan

2013-11-13

SWNT thin films with different nanotube densities are fabricated by CVD while controlling the concentration of catalyst and growth time. Three layers of SWNT films are transferred to flexible substrates serving as electrodes and channel materials, respectively. All-carbon nanotube TFTs with an on/off ratio as high as 10(5) are obtained. Inverters are fabricated on top of the flexible substrates with symmetric input/output behavior. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Smart Microwave Vacuum Electron Device (MVED) Using Field Emitters

DTIC Science & Technology

2012-01-31

operation of the device. By using a larger retardation value, the slow wave phase velocity is decreased allowing a lower E/B drift velocity. By reducing...the drift velocity the device is able to run at a lower cathode potential reducing the risk of high voltage arcing. This new slow wave circuit will...sole electrode above the cathode by using a thin dielectric layer ( mylar ) on top of the cathode and placing the sole electrode on the dielectric

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

NASA Astrophysics Data System (ADS)

Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

2009-11-01

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

A layered microchip conductance detector with through-layer access to detection fields and high sensitivity to dielectric constant.

PubMed

Suganuma, Y; Dhirani, A-A

2011-04-01

The present study explores a novel apertured microchip conductance detector (AMCD) that is sensitive to dielectric constant. Fashioned on silicon oxide/silicon using optical microlithography, the detector has novel parallel-plate geometry with a top mesh electrode, a middle apertured insulator, and a bottom conducting electrode. This monolithic apertured architecture is planar and may be provided with a thin insulator layer enabling large capacitances, while the top mesh electrode and middle apertured-insulator enable access to regions of the capacitor where electric fields are strong. Hence, the detector is sensitive yet mechanically robust. To test its response, the AMCD was immersed in various solvents, namely water, methanol, acetonitrile, and hexanes. Its response was found to vary in proportion to the solvents' respective dielectric constants. The AMCD was also able to distinguish quantitatively the presence of various molecules in solution, including molecules with chromophores [such as acetylsalicylic acid (ASA)] in methanol and those without chrompohores [such as polyethylene glycol 200 Daltons (PEG200)] in methanol or water. The universal nature of dielectric constant and the microchip detector's sensitivity point to a wide range of potential applications. © 2011 American Institute of Physics

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

PubMed

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

Oxidation behavior of thermal barrier coating systems with Al interlayer under isothermal loading

NASA Astrophysics Data System (ADS)

Ali, I.; Sokołowski, P.; Grund, T.; Pawłowski, L.; Lampke, T.

2018-06-01

In the present study, the phenomena related to the Thermally Grown Oxides (TGO) in atmospheric plasma sprayed Thermal Barrier Coatings (TBCs) are discussed. CoNiCrAlY bond coatings were sprayed on Inconel 600 substrates. Subsequently, thin Al layers were deposited by DC-Magnetron sputtering. Finally, yttria-stabilized zirconia (YSZ) top coatings were deposited to form a three-layered TBC system. The thus produced aluminum interlayer containing thermal barrier coatings (Al-TBC) were subjected to isothermal exposure with different holding times at 1150 °C and compared with reference TBCs of the same kind, but without Al interlayers (R-TBC). The oxide film formation in the interface between bond coating (BC) and top coating (TC) was investigated by scanning electron microscope (SEM) after 100 and 300 h of high temperature isothermal exposure. The growth of this oxide film as a function of the isothermal exposure time was studied. As a result, the designed Al-TBC system exhibited better oxidation resistance in the BC/TC interface than the two-layered R-TBC system. This was lead back to the Al enrichment, which slows down the formation rate of transition metal oxides during thermal loading.

PZT Thin-Film Micro Probe Device with Dual Top Electrodes

NASA Astrophysics Data System (ADS)

Luo, Chuan

Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths should be less than 3 mm in order to guarantee the first resonant frequency above 60 kHz. Finally, a package for the PZT thin-film micro probe device is developed to ensure its proper function in an aqueous environment, such as inside of cochlea. The package is an insulation layer of parylene coating on the probe. A finite element analysis indicates that a coating thickness of less than 1 mum will reduce the PZT diaphragm displacement by less than 10%. A special fixture is designed to hold a large number of probes for parylene deposition of a thickness of 250 nm. A packaged probe is then submerged in deionized water and functions properly for at least 55 hours. Displacement and impedance of the probe are measured via a laser Doppler vibrometer and an impedance analyzer, respectively. Experimental results show that displacement of the PZT diaphragm increases about 30% in two hours, after the probe is submerged in the deionized water. The impedance measurement shows consistent trends. A hypothesis to explain this unusual phenomenon is diffusion of water molecules into the PZT thin film. High-resolution SEM images of the probe indicate presence of numerous nano-pores in the surface of the PZT thin film, indirectly confirming the hypothesis. Keywords: PZT, Thin-Film, Dual Electrodes, Parylene Coating, Aqueous Environment, Cochlear Implant

Engineering Interface Structure to Improve Efficiency and Stability of Organometal Halide Perovskite Solar Cells.

PubMed

Qiu, Longbin; Ono, Luis K; Jiang, Yan; Leyden, Matthew R; Raga, Sonia R; Wang, Shenghao; Qi, Yabing

2018-01-18

The rapid rise of power conversion efficiency (PCE) of low cost organometal halide perovskite solar cells suggests that these cells are a promising alternative to conventional photovoltaic technology. However, anomalous hysteresis and unsatisfactory stability hinder the industrialization of perovskite solar cells. Interface engineering is of importance for the fabrication of highly stable and hysteresis free perovskite solar cells. Here we report that a surface modification of the widely used TiO 2 compact layer can give insight into interface interaction in perovskite solar cells. A highest PCE of 18.5% is obtained using anatase TiO 2 , but the device is not stable and degrades rapidly. With an amorphous TiO 2 compact layer, the devices show a prolonged lifetime but a lower PCE and more pronounced hysteresis. To achieve a high PCE and long lifetime simultaneously, an insulating polymer interface layer is deposited on top of TiO 2 . Three polymers, each with a different functional group (hydroxyl, amino, or aromatic group), are investigated to further understand the relation of interface structure and device PCE as well as stability. We show that it is necessary to consider not only the band alignment at the interface, but also interface chemical interactions between the thin interface layer and the perovskite film. The hydroxyl and amino groups interact with CH 3 NH 3 PbI 3 leading to poor PCEs. In contrast, deposition of a thin layer of polymer consisting of an aromatic group to prevent the direct contact of TiO 2 and CH 3 NH 3 PbI 3 can significantly enhance the device stability, while the same time maintaining a high PCE. The fact that a polymer interface layer on top of TiO 2 can enhance device stability, strongly suggests that the interface interaction between TiO 2 and CH 3 NH 3 PbI 3 plays a crucial role. Our work highlights the importance of interface structure and paves the way for further optimization of PCEs and stability of perovskite solar cells.

Characteristics and composition of fouling caused by pig slurry in a tubular heat exchanger--recommended cleaning systems.

PubMed

Cunault, C; Coquinot, Y; Burton, C H; Picard, S; Pourcher, A M

2013-03-15

The structure and composition of the fouling deposits caused by pig slurry heated in a tubular heat exchanger were characterized to understand their formation and thus be able to minimize fouling and define effective routine cleaning methods. Two temperatures (55 °C and 80 °C) were investigated. Two types of fouling were identified: organic/mineral and biofilm. The first only formed at temperatures above 50 °C, often during the heating phase, and was the main problem encountered in treatments at 80 °C. Organic/mineral deposits formed a thin compact sub-layer and a thick porous top layer composed of 67-76% minerals, 9-15% proteins, 8-20% carbohydrates and 0-5% fats. Biofilms formed at temperatures between 25 °C and 70 °C in both the cooling and heating sections of the exchanger. This type of fouling predominated at temperatures below 55 °C. The biofilm covered a thin mineral base layer. Strongly acidic or alkaline washing cycle are recommended to clean Type I deposits, while in-line gas-rumbling is recommended for Type II fouling. Copyright © 2013 Elsevier Ltd. All rights reserved.

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifonov, A. S., E-mail: trifonov.artem@phys.msu.ru; Physics Faculty, Lomonosov Moscow State University, Moscow 119991; Lubenchenko, A. V.

2015-03-28

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of themore » alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.« less

Computational modeling of muscular thin films for cardiac repair

NASA Astrophysics Data System (ADS)

Böl, Markus; Reese, Stefanie; Parker, Kevin Kit; Kuhl, Ellen

2009-03-01

Motivated by recent success in growing biohybrid material from engineered tissues on synthetic polymer films, we derive a computational simulation tool for muscular thin films in cardiac repair. In this model, the polydimethylsiloxane base layer is simulated in terms of microscopically motivated tetrahedral elements. Their behavior is characterized through a volumetric contribution and a chain contribution that explicitly accounts for the polymeric microstructure of networks of long chain molecules. Neonatal rat ventricular cardiomyocytes cultured on these polymeric films are modeled with actively contracting truss elements located on top of the sheet. The force stretch response of these trusses is motivated by the cardiomyocyte force generated during active contraction as suggested by the filament sliding theory. In contrast to existing phenomenological models, all material parameters of this novel model have a clear biophyisical interpretation. The predictive features of the model will be demonstrated through the simulation of muscular thin films. First, the set of parameters will be fitted for one particular experiment documented in the literature. This parameter set is then used to validate the model for various different experiments. Last, we give an outlook of how the proposed simulation tool could be used to virtually predict the response of multi-layered muscular thin films. These three-dimensional constructs show a tremendous regenerative potential in repair of damaged cardiac tissue. The ability to understand, tune and optimize their structural response is thus of great interest in cardiovascular tissue engineering.

Tuning the Kondo effect in thin Au films by depositing a thin layer of Au on molecular spin-dopants.

PubMed

Ataç, D; Gang, T; Yilmaz, M D; Bose, S K; Lenferink, A T M; Otto, C; de Jong, M P; Huskens, J; van der Wiel, W G

2013-09-20

We report on the tuning of the Kondo effect in thin Au films containing a monolayer of cobalt(II) terpyridine complexes by altering the ligand structure around the Co(2+) ions by depositing a thin Au capping layer on top of the monolayer on Au by magnetron sputtering (more energetic) and e-beam evaporation (softer). We show that the Kondo effect is slightly enhanced with respect to that of the uncapped film when the cap is deposited by evaporation, and significantly enhanced when magnetron sputtering is used. The Kondo temperature (TK) increases from 3 to 4.2/6.2 K for the evaporated/sputtered caps. X-ray absorption spectroscopy and surface-enhanced Raman spectroscopy investigation showed that the organic ligands remain intact upon Au e-beam evaporation; however, sputtering inflicts significant change in the Co(2+) electronic environment. The location of the monolayer-on the surface or embedded in the film-has a small effect. However, the damage of Co-N bonds induced by sputtering has a drastic effect on the increase of the impurity-electron interaction. This opens up the way for tuning of the magnetic impurity states, e.g. spin quantum number, binding energy with respect to the host Fermi energy, and overlap via the ligand structure around the ions.

Electrically tunable coherent optical absorption in graphene with ion gel.

PubMed

Thareja, Vrinda; Kang, Ju-Hyung; Yuan, Hongtao; Milaninia, Kaveh M; Hwang, Harold Y; Cui, Yi; Kik, Pieter G; Brongersma, Mark L

2015-03-11

We demonstrate electrical control over coherent optical absorption in a graphene-based Salisbury screen consisting of a single layer of graphene placed in close proximity to a gold back reflector. The screen was designed to enhance light absorption at a target wavelength of 3.2 μm by using a 600 nm-thick, nonabsorbing silica spacer layer. An ionic gel layer placed on top of the screen was used to electrically gate the charge density in the graphene layer. Spectroscopic reflectance measurements were performed in situ as a function of gate bias. The changes in the reflectance spectra were analyzed using a Fresnel based transfer matrix model in which graphene was treated as an infinitesimally thin sheet with a conductivity given by the Kubo formula. The analysis reveals that a careful choice of the ionic gel layer thickness can lead to optical absorption enhancements of up to 5.5 times for the Salisbury screen compared to a suspended sheet of graphene. In addition to these absorption enhancements, we demonstrate very large electrically induced changes in the optical absorption of graphene of ∼3.3% per volt, the highest attained so far in a device that features an atomically thick active layer. This is attributable in part to the more effective gating achieved with the ion gel over the conventional dielectric back gates and partially by achieving a desirable coherent absorption effect linked to the presence of the thin ion gel that boosts the absorption by 40%.

A Fast Hyperspectral Vector Radiative Transfer Model in UV to IR spectral bands

NASA Astrophysics Data System (ADS)

Ding, J.; Yang, P.; Sun, B.; Kattawar, G. W.; Platnick, S. E.; Meyer, K.; Wang, C.

2016-12-01

We develop a fast hyperspectral vector radiative transfer model with a spectral range from UV to IR with 5 nm resolutions. This model can simulate top of the atmosphere (TOA) diffuse radiance and polarized reflectance by considering gas absorption, Rayleigh scattering, and aerosol and cloud scattering. The absorption component considers several major atmospheric absorbers such as water vapor, CO2, O3, and O2 including both line and continuum absorptions. A regression-based method is used to parameterize the layer effective optical thickness for each gas, which substantially increases the computation efficiency for absorption while maintaining high accuracy. This method is over 500 times faster than the existing line-by-line method. The scattering component uses the successive order of scattering (SOS) method. For Rayleigh scattering, convergence is fast due to the small optical thickness of atmospheric gases. For cloud and aerosol layers, a small-angle approximation method is used in SOS calculations. The scattering process is divided into two parts, a forward part and a diffuse part. The scattering in the small-angle range in the forward direction is approximated as forward scattering. A cloud or aerosol layer is divided into thin layers. As the ray propagates through each thin layer, a portion diverges as diffuse radiation, while the remainder continues propagating in forward direction. The computed diffuse radiance is the sum of all of the diffuse parts. The small-angle approximation makes the SOS calculation converge rapidly even in a thick cloud layer.

Evaluation of the OMI Cloud Pressures Derived from Rotational Raman Scattering by Comparisons with other Satellite Data and Radiative Transfer Simulations

NASA Technical Reports Server (NTRS)

Vasilkov, Alexander; Joiner, Joanna; Spurr, Robert; Bhartia, Pawan K.; Levelt, Pieternel; Stephens, Graeme

2009-01-01

In this paper we examine differences between cloud pressures retrieved from the Ozone Monitoring Instrument (OMI) using the ultraviolet rotational Raman scattering (RRS) algorithm and those from the thermal infrared (IR) Aqua/MODIS. Several cloud data sets are currently being used in OMI trace gas retrieval algorithms including climatologies based on IR measurements and simultaneous cloud parameters derived from OMI. From a validation perspective, it is important to understand the OMI retrieved cloud parameters and how they differ with those derived from the IR. To this end, we perform radiative transfer calculations to simulate the effects of different geophysical conditions on the OMI RRS cloud pressure retrievals. We also quantify errors related to the use of the Mixed Lambert-Equivalent Reflectivity (MLER) concept as currently implemented of the OMI algorithms. Using properties from the Cloudsat radar and MODIS, we show that radiative transfer calculations support the following: (1) The MLER model is adequate for single-layer optically thick, geometrically thin clouds, but can produce significant errors in estimated cloud pressure for optically thin clouds. (2) In a two-layer cloud, the RRS algorithm may retrieve a cloud pressure that is either between the two cloud decks or even beneath the top of the lower cloud deck because of scattering between the cloud layers; the retrieved pressure depends upon the viewing geometry and the optical depth of the upper cloud deck. (3) Absorbing aerosol in and above a cloud can produce significant errors in the retrieved cloud pressure. (4) The retrieved RRS effective pressure for a deep convective cloud will be significantly higher than the physical cloud top pressure derived with thermal IR.

E4 True and false color hot spot mosaic

NASA Technical Reports Server (NTRS)

1997-01-01

True and false color views of Jupiter from NASA's Galileo spacecraft show an equatorial 'hotspot' on Jupiter. These images cover an area 34,000 kilometers by 11,000 kilometers (about 21,100 by 6,800 miles). The top mosaic combines the violet and near infrared continuum filter images to create an image similar to how Jupiter would appear to human eyes. Differences in coloration are due to the composition and abundances of trace chemicals in Jupiter's atmosphere. The bottom mosaic uses Galileo's three near-infrared wavelengths displayed in red, green, and blue) to show variations in cloud height and thickness. Bluish clouds are high and thin, reddish clouds are low, and white clouds are high and thick. The dark blue hotspot in the center is a hole in the deep cloud with an overlying thin haze. The light blue region to the left is covered by a very high haze layer. The multicolored region to the right has overlapping cloud layers of different heights. Galileo is the first spacecraft to distinguish cloud layers on Jupiter.

North is at the top. The mosaic covers latitudes 1 to 10 degrees and is centered at longitude 336 degrees west. The smallest resolved features are tens of kilometers in size. These images were taken on December 17, 1996, at a range of 1.5 million kilometers (about 930,000 miles) by the Solid State Imaging camera system aboard Galileo. The Jet Propulsion Laboratory, Pasadena, CA manages the mission for NASA's Office of Space Science, Washington, DC.

This image and other images and data received from Galileo are posted on the World Wide Web, on the Galileo mission home page at: http://galileo.jpl.nasa.gov. Background information and educational context for the images can be found at: http:/ /www.jpl.nasa.gov/galileo/sepo.

Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Yue, Lan; Meng, Fanxin; Chen, Jiarong

2018-01-01

The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor in IZO films. Meanwhile, it was found that the on/off current ratio (I on/off) of TFT was improved by embedding a high-resistivity AIZO layer between the low-resistivity AIZO layer and gate insulator. The improvement in I on/off was attributed to the decrease in off-state current of double-active-layer TFT due to an increase in the active-layer resistance and the contact resistance between active layer and source/drain electrode. Moreover, on-state current and threshold voltage (V th) can be mainly controlled through thickness and Al content of the low-resistivity AIZO layer. In addition, the saturation mobility (μ sat) of TFTs was improved with reducing the size of channel width or/and length, which was attributed to the decrease in trap states in the semiconductor and at the semiconductor/gate-insulator interface with the smaller channel width or/and shorter channel length. Thus, we can demonstrate excellent TFTs via the design of active-layer composition and structure by utilizing a low cost solution-processed method. The resulting TFT, operating in enhancement mode, has a high μ sat of 14.16 cm2 V-1 s-1, a small SS of 0.40 V/decade, a close-to-zero V th of 0.50 V, and I on/off of more than 105.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

NASA Astrophysics Data System (ADS)

Huang, Zhiquan

Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si:H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.

System for analysis of explosives

DOEpatents

Haas, Jeffrey S [San Ramon, CA

2010-06-29

A system for analysis of explosives. Samples are spotted on a thin layer chromatography plate. Multi-component explosives standards are spotted on the thin layer chromatography plate. The thin layer chromatography plate is dipped in a solvent mixture and chromatography is allowed to proceed. The thin layer chromatography plate is dipped in reagent 1. The thin layer chromatography plate is heated. The thin layer chromatography plate is dipped in reagent 2.

Shallow marine cloud topped boundary layer in atmospheric models

NASA Astrophysics Data System (ADS)

Janjic, Zavisa

2017-04-01

A common problem in many atmospheric models is excessive expansion over cold water of shallow marine planetary boundary layer (PBL) topped by a thin cloud layer. This phenomenon is often accompanied by spurious light precipitation. The "Cloud Top Entrainment Instability" (CTEI) was proposed as an explanation of the mechanism controlling this process in reality thereby preventing spurious enlargement of the cloudy area and widely spread light precipitation observed in the models. A key element of this hypothesis is evaporative cooling at the PBL top. However, the CTEI hypothesis remains controversial. For example, a recent direct simulation experiment indicated that the evaporative cooling couldn't explain the break-up of the cloudiness as hypothesized by the CTEI. Here, it is shown that the cloud break-up can be achieved in numerical models by a further modification of the nonsingular implementation of the Mellor-Yamada Level 2.5 turbulence closure model (MYJ) developed at the National Centers for Environmental Prediction (NCEP) Washington. Namely, the impact of moist convective instability is included into the turbulent energy production/dissipation equation if (a) the stratification is stable, (b) the lifting condensation level (LCL) for a particle starting at a model level is below the next upper model level, and (c) there is enough turbulent kinetic energy so that, due to random vertical turbulent motions, a particle starting from a model level can reach its LCL. The criterion (c) should be sufficiently restrictive because otherwise the cloud cover can be completely removed. A real data example will be shown demonstrating the ability of the method to break the spurious cloud cover during the day, but also to allow its recovery over night.

Modeling of Shallow Marine Cloud Topped Boundary Layer

NASA Astrophysics Data System (ADS)

Janjic, Z.

2017-12-01

A common problem in many atmospheric models is excessive expansion over cold water of shallow marine planetary boundary layer (PBL) topped by a thin cloud layer. This phenomenon is often accompanied by spurious light precipitation. The "Cloud Top Entrainment Instability" (CTEI) was proposed as an explanation of the mechanism controlling this process and thus preventing spurious enlargement of the cloudy area and widely spread light precipitation observed in the models. A key element of this hypothesis is evaporative cooling at the PBL top. However, the CTEI hypothesis remains controversial. For example, a recent direct simulation experiment indicated that the evaporative cooling couldn't explain the break-up of the cloudiness as hypothesized by the CTEI. Here, it is shown that the cloud break-up can be achieved in numerical models by a further modification of the nonsingular implementation of the nonsingular Mellor-Yamada Level 2.5 turbulence closure model (MYJ) developed at the National Centers for Environmental Prediction (NCEP) Washington. Namely, the impact of moist convective instability is included into the turbulent energy production/dissipation equation if (a) the stratification is stable, (b) the lifting condensation level (LCL) for a particle starting at a model level is below the next upper model level, and (c) there is enough turbulent kinetic energy so that, due to random vertical turbulent motions, a particle starting from a model level can reach its LCL. The criterion (c) should be sufficiently restrictive because otherwise the cloud cover can be completely removed. A real data example will be shown demonstrating the ability of the method to break the spurious cloud cover during the day, but also to allow its recovery over night.

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

PubMed

Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

2014-10-07

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

Remote Sensing of Cloud Top Heights Using the Research Scanning Polarimeter

NASA Technical Reports Server (NTRS)

Sinclair, Kenneth; van Diedenhoven, Bastiaan; Cairns, Brian; Yorks, John; Wasilewski, Andrzej

2015-01-01

Clouds cover roughly two thirds of the globe and act as an important regulator of Earth's radiation budget. Of these, multilayered clouds occur about half of the time and are predominantly two-layered. Changes in cloud top height (CTH) have been predicted by models to have a globally averaged positive feedback, however observational changes in CTH have shown uncertain results. Additional CTH observations are necessary to better and quantify the effect. Improved CTH observations will also allow for improved sub-grid parameterizations in large-scale models and accurate CTH information is important when studying variations in freezing point and cloud microphysics. NASA's airborne Research Scanning Polarimeter (RSP) is able to measure cloud top height using a novel multi-angular contrast approach. RSP scans along the aircraft track and obtains measurements at 152 viewing angles at any aircraft location. The approach presented here aggregates measurements from multiple scans to a single location at cloud altitude using a correlation function designed to identify the location-distinct features in each scan. During NASAs SEAC4RS air campaign, the RSP was mounted on the ER-2 aircraft along with the Cloud Physics Lidar (CPL), which made simultaneous measurements of CTH. The RSPs unique method of determining CTH is presented. The capabilities of using single and combinations of channels within the approach are investigated. A detailed comparison of RSP retrieved CTHs with those of CPL reveal the accuracy of the approach. Results indicate a strong ability for the RSP to accurately identify cloud heights. Interestingly, the analysis reveals an ability for the approach to identify multiple cloud layers in a single scene and estimate the CTH of each layer. Capabilities and limitations of identifying single and multiple cloud layers heights are explored. Special focus is given to sources of error in the method including optically thin clouds, physically thick clouds, multi-layered clouds as well as cloud phase. When determining multi-layered CTHs, limits on the upper clouds opacity are assessed.

Study of the Au-Cr bilayer system using X-ray reflectivity, GDOES, and ToF-SIMS

DOE PAGES

Jonnard, Philippe; Modi, Mohammed H.; Le Guen, Karine; ...

2018-04-17

Here, we study a Au (25 nm)/Cr (10 nm) bilayer system as a model of mirror for the soft X–ray energy range. The Au and Cr thin films are a few nanometer thick and are deposited on a float glass substrate. The sample is characterized by using 3 complementary techniques: soft X–ray reflectivity, glow discharge optical emission spectrometry (GDOES), and time–of–flight secondary ion mass spectroscopy (ToF–SIMS). Soft X–ray reflectivity provides information about the thickness and roughness of the different layers, while GDOES is used to obtain the elemental depth profile of the stack and ToF–SIMS to obtain the elemental andmore » chemical depth profiles. GDOES and ToF–SIMS have both a nanometer depth resolution. A coherent description of the bilayer stack is obtained through the combination of these techniques. It consists in 5 layers namely a surface contamination layer, a principal gold layer, a Au–Cr mixed layer, a Cr layer, and another contamination layer at the top of the substrate.« less

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

PubMed

Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

2015-03-17

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

Study of the Au-Cr bilayer system using X-ray reflectivity, GDOES, and ToF-SIMS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jonnard, Philippe; Modi, Mohammed H.; Le Guen, Karine

Here, we study a Au (25 nm)/Cr (10 nm) bilayer system as a model of mirror for the soft X–ray energy range. The Au and Cr thin films are a few nanometer thick and are deposited on a float glass substrate. The sample is characterized by using 3 complementary techniques: soft X–ray reflectivity, glow discharge optical emission spectrometry (GDOES), and time–of–flight secondary ion mass spectroscopy (ToF–SIMS). Soft X–ray reflectivity provides information about the thickness and roughness of the different layers, while GDOES is used to obtain the elemental depth profile of the stack and ToF–SIMS to obtain the elemental andmore » chemical depth profiles. GDOES and ToF–SIMS have both a nanometer depth resolution. A coherent description of the bilayer stack is obtained through the combination of these techniques. It consists in 5 layers namely a surface contamination layer, a principal gold layer, a Au–Cr mixed layer, a Cr layer, and another contamination layer at the top of the substrate.« less

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Thin-layer chromatography system for clinical use... Instruments § 862.2270 Thin-layer chromatography system for clinical use. (a) Identification. A thin-layer... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert...

Measurement of a surface heat flux and temperature

NASA Astrophysics Data System (ADS)

Davis, R. M.; Antoine, G. J.; Diller, T. E.; Wicks, A. L.

1994-04-01

The Heat Flux Microsensor is a new sensor which was recently patented by Virginia Tech and is just starting to be marketed by Vatell Corp. The sensor is made using the thin-film microfabrication techniques directly on the material that is to be measured. It consists of several thin-film layers forming a differential thermopile across a thermal resistance layer. The measured heat flux q is proportional to the temperature difference across the resistance layer q= k(sub g)/delta(sub g) x (t(sub 1) - T(sub 2)), where k(sub g) is the thermal conductivity and delta (sub g) is the thickness of the thermal resistance layer. Because the gages are sputter coated directly onto the surface, their total thickness is less than 2 micrometers, which is two orders of magnitude thinner than previous gages. The resulting temperature difference across the thermal resistance layer (delta is less than 1 micrometer) is very small even at high heat fluxes. To generate a measurable signal many thermocouple pairs are put in series to form a differential thermopile. The combination of series thermocouple junctions and thin-film design creates a gage with very attractive characteristics. It is not only physically non-intrusive to the flow, but also causes minimal disruption of the surface temperature. Because it is so thin, the response time is less than 20 microsec. Consequently, the frequency response is flat from 0 to over 50 kHz. Moreover, the signal of the Heat Flux Microsensor is directly proportional to the heat flux. Therefore, it can easily be used in both steady and transient flows, and it measures both the steady and unsteady components of the surface heat flux. A version of the Heat Flux Microsensor has been developed to meet the harsh demands of combustion environments. These gages use platinum and platinum-10 percent rhodium as the thermoelectric materials. The thermal resistance layer is silicon monoxide and a protective coating of Al2O3 is deposited on top of the sensor. The superimposed thin-film pattern of all six layers is presented. The large pads are for connection with pins used to bring the signal out the back of the ceramic.

Measurement of a surface heat flux and temperature

NASA Technical Reports Server (NTRS)

Davis, R. M.; Antoine, G. J.; Diller, T. E.; Wicks, A. L.

1994-01-01

The Heat Flux Microsensor is a new sensor which was recently patented by Virginia Tech and is just starting to be marketed by Vatell Corp. The sensor is made using the thin-film microfabrication techniques directly on the material that is to be measured. It consists of several thin-film layers forming a differential thermopile across a thermal resistance layer. The measured heat flux q is proportional to the temperature difference across the resistance layer q= k(sub g)/delta(sub g) x (t(sub 1) - T(sub 2)), where k(sub g) is the thermal conductivity and delta (sub g) is the thickness of the thermal resistance layer. Because the gages are sputter coated directly onto the surface, their total thickness is less than 2 micrometers, which is two orders of magnitude thinner than previous gages. The resulting temperature difference across the thermal resistance layer (delta is less than 1 micrometer) is very small even at high heat fluxes. To generate a measurable signal many thermocouple pairs are put in series to form a differential thermopile. The combination of series thermocouple junctions and thin-film design creates a gage with very attractive characteristics. It is not only physically non-intrusive to the flow, but also causes minimal disruption of the surface temperature. Because it is so thin, the response time is less than 20 microsec. Consequently, the frequency response is flat from 0 to over 50 kHz. Moreover, the signal of the Heat Flux Microsensor is directly proportional to the heat flux. Therefore, it can easily be used in both steady and transient flows, and it measures both the steady and unsteady components of the surface heat flux. A version of the Heat Flux Microsensor has been developed to meet the harsh demands of combustion environments. These gages use platinum and platinum-10 percent rhodium as the thermoelectric materials. The thermal resistance layer is silicon monoxide and a protective coating of Al2O3 is deposited on top of the sensor. The superimposed thin-film pattern of all six layers is presented. The large pads are for connection with pins used to bring the signal out the back of the ceramic. In addition to the heat flux measurement, the surface temperature is measured with a platinum resistance layer (RTS). The resistance of this layer increases with increasing temperature. Therefore, these gages simultaneously measure the surface temperature and heat flux. The demonstrated applications include rocket nozzles, SCRAM jet engines, gas turbine engines, boiling heat transfer, flame experiments, basic fluid heat transfer, hypersonic flight, and shock tube testing. The laboratory involves using one of these sensors in a small combustion flame. The sensor is made on a 2.5 cm diameter piece of aluminum nitride ceramic.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghica, C., E-mail: cghica@infim.ro; Negrea, R. F.; Nistor, L. C.

2014-07-14

In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence ofmore » structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.« less

Endolithic microbial life in extreme cold climate: snow is required, but perhaps less is more.

PubMed

Sun, Henry J

2013-04-03

Cyanobacteria and lichens living under sandstone surfaces in the McMurdo Dry Valleys require snow for moisture. Snow accumulated beyond a thin layer, however, is counterproductive, interfering with rock insolation, snow melting, and photosynthetic access to light. With this in mind, the facts that rock slope and direction control colonization, and that climate change results in regional extinctions, can be explained. Vertical cliffs, which lack snow cover and are perpetually dry, are devoid of organisms. Boulder tops and edges can trap snow, but gravity and wind prevent excessive buildup. There, the organisms flourish. In places where snow-thinning cannot occur and snow drifts collect, rocks may contain living or dead communities. In light of these observations, the possibility of finding extraterrestrial endolithic communities on Mars cannot be eliminated.

Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Kang, Chun Hong; Shen, Chao; M. Saheed, M. Shuaib; Mohamed, Norani Muti; Ng, Tien Khee; Ooi, Boon S.; Burhanudin, Zainal Arif

2016-08-01

Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

Accurate Spectral Fits of Jupiter's Great Red Spot: VIMS Visual Spectra Modelled with Chromophores Created by Photolyzed Ammonia Reacting with Acetyleneχ±

NASA Astrophysics Data System (ADS)

Baines, Kevin; Sromovsky, Lawrence A.; Fry, Patrick M.; Carlson, Robert W.; Momary, Thomas W.

2016-10-01

We report results incorporating the red-tinted photochemically-generated aerosols of Carlson et al (2016, Icarus 274, 106-115) in spectral models of Jupiter's Great Red Spot (GRS). Spectral models of the 0.35-1.0-micron spectrum show good agreement with Cassini/VIMS near-center-meridian and near-limb GRS spectra for model morphologies incorporating an optically-thin layer of Carlson (2016) aerosols at high altitudes, either at the top of the tropospheric GRS cloud, or in a distinct stratospheric haze layer. Specifically, a two-layer "crème brûlée" structure of the Mie-scattering Carlson et al (2016) chromophore attached to the top of a conservatively scattering (hereafter, "white") optically-thick cloud fits the spectra well. Currently, best agreement (reduced χ2 of 0.89 for the central-meridian spectrum) is found for a 0.195-0.217-bar, 0.19 ± 0.02 opacity layer of chromophores with mean particle radius of 0.14 ± 0.01 micron. As well, a structure with a detached stratospheric chromophore layer ~0.25 bar above a white tropospheric GRS cloud provides a good spectral match (reduced χ2 of 1.16). Alternatively, a cloud morphology with the chromophore coating white particles in a single optically- and physically-thick cloud (the "coated-shell model", initially explored by Carlson et al 2016) was found to give significantly inferior fits (best reduced χ2 of 2.9). Overall, we find that models accurately fit the GRS spectrum if (1) most of the optical depth of the chromophore is in a layer near the top of the main cloud or in a distinct separated layer above it, but is not uniformly distributed within the main cloud, (2) the chromophore consists of relatively small, 0.1-0.2-micron-radius particles, and (3) the chromophore layer optical depth is small, ~ 0.1-0.2. Thus, our analysis supports the exogenic origin of the red chromophore consistent with the Carlson et al (2016) photolytic production mechanism rather than an endogenic origin, such as upwelling of material from the depths of Jupiter.

Remote Sensing of Cloud Top Height from SEVIRI: Analysis of Eleven Current Retrieval Algorithms

NASA Technical Reports Server (NTRS)

Hamann, U.; Walther, A.; Baum, B.; Bennartz, R.; Bugliaro, L.; Derrien, M.; Francis, P. N.; Heidinger, A.; Joro, S.; Kniffka, A.;

Triboelectric generator

DOEpatents

Wang, Zhong L; Fan, Fengru; Lin, Long; Zhu, Guang; Pan, Caofeng; Zhou, Yusheng

2015-11-03

A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Highly flexible and electroforming free resistive switching behavior of tungsten disulfide flakes fabricated through advanced printing technology

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Doh, Yang Hoi; Choi, Kyung Hyun

2017-09-01

Tungsten disulfide (WS2) is a transition metal dichalcogenide that differs from other 2D materials such as graphene owing to its distinctive semiconducting nature and tunable band gap. In this study, we have reported the structural, electrical, physical, and mechanical properties of exfoliated WS2 flakes and used them as the functional layer of a rewritable bipolar memory device. We demonstrate this concept by sandwiching few-layered WS2 flakes between two silver (Ag) electrodes on a flexible and transparent PET substrate. The entire device fabrication was carried out through all-printing technology such as reverse offset printing for patterning bottom electrodes, electrohydrodynamic (EHD) atomization for depositing functional thin film and EHD patterning for depositing the top electrode respectively. The memory device was further encapsulated with an atomically thin layer of aluminum oxide (Al2O3), deposited through a spatial atmospheric atomic layer deposition system to protect it against a humid environment. Remarkable resistive switching results were obtained, such as nonvolatile bipolar behavior, a high switching ratio (∼103), a long retention time (∼105 s), high endurance (1500 voltage sweeps), a low operating voltage (∼2 V), low current compliance (50 μA), mechanical robustness (1500 cycles) and unique repeatability at ambient conditions. Ag/WS2/Ag-based memory devices offer a new possibility for integration in flexible electronic devices.

Airborne lidar observations of Saharan dust during FENNEC

NASA Astrophysics Data System (ADS)

Marenco, Franco; Garcia-Carreras, Luis; Rosenberg, Phil; McQuaid, Jim

2013-04-01

In June 2011 and June 2012, the Facility for Airborne Atmospheric Measurements (FAAM) BAe-146 research aircraft took part in the Fennec campaign. The main purpose was to quantify and model boundary layer and aerosol processes over the Saharan "heat low" region, the greatest dust region during summer. Although the central Sahara is extremely remote, the meteorology of this region is vital in driving the West African monsoon, and the dry and dusty air layers are closely related to the formation of Atlantic tropical cyclones. In this presentation, we shall characterise these air layers using data collected with the on-board lidar together with dropsondes. The interpretation of lidar signals in this particular geometry represents a challenge (nadir observations of thick layers), but we shall show that a suitable data inversion framework is possible under certain assumptions. The quality of the lidar data will be assessed using in-situ data from the nephelometer and optical particle counters. Deep air layers containing dust have been observed up to altitude of 5-6 km above mean sea level. The analysis of temperature and dew point profiles are used to identify the boundary layer and residual layer tops, and in conjunction with lidar observations this serves to quantify the dust content of both layers. An aerosol-laden residual layer is usually found during the campaign at an altitude of 2-6 km in the morning hours, with little aerosol below. The aerosol in the boundary layer is seen to develop later when solar heating of the surface induces turbulence until in the late afternoon the top of the boundary layer reaches up to ~ 6 km. Clouds embedded in aerosol layers and aerosol-cloud interactions have also been revealed. Dust aerosol has been observed in most cases, but a thin polluted non-dusty layer has been observed during one flight.

History and anatomy of subsurface ice on Mars

NASA Astrophysics Data System (ADS)

Schorghofer, Norbert; Forget, Francois

2012-08-01

Ice buried beneath a thin layer of soil has been revealed by neutron spectroscopy and explored by the Phoenix Mars Lander. It has also been exposed by recent impacts. This subsurface ice is thought to lose and gain volume in response to orbital variations (Milankovitch cycles). We use a powerful numerical model to follow the growth and retreat of near-surface ice as a result of regolith-atmosphere exchange continuously over millions of years. If a thick layer of almost pure ice has been deposited recently, it has not yet reached equilibrium with the atmospheric water vapor and may still remain as far equatorward as 43°N, where ice has been revealed by recent impacts. A potentially observable consequence is present-day humidity output from the still retreating ice. We also demonstrate that in a sublimation environment, subsurface pore ice can accumulate in two ways. The first mode, widely known, is the progressive filling of pores by ice over a range of depths. The second mode occurs on top of an already impermeable ice layer; subsequent ice accumulates in the form of pasted on horizontal layers such that beneath the ice table, the pores are completely full with ice. Most or all of the pore ice on Mars today may be of the second type. At the Phoenix landing site, where such a layer is also expected to exist above an underlying ice sheet, it may be extremely thin, due to exceptionally small variations in ice stability over time.

Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-07-14

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high densitymore » tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.« less

Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

NASA Astrophysics Data System (ADS)

Kar, Debjit; Das, Debajyoti

2016-07-01

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Weiquan; Becker, Jacob; Liu, Shi

2014-05-28

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

PubMed

Salvatore, Giovanni A; Münzenrieder, Niko; Barraud, Clément; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Ensslin, Klaus; Tröster, Gerhard

2013-10-22

Recently, transition metal dichalcogenides (TMDCs) have attracted interest thanks to their large field effective mobility (>100 cm(2)/V · s), sizable band gap (around 1-2 eV), and mechanical properties, which make them suitable for high performance and flexible electronics. In this paper, we present a process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support. The two-dimensional semiconductor is mechanically exfoliated from a bulk crystal on a silicon/polyvinyl alcohol (PVA)/polymethyl methacrylane (PMMA) stack optimized to ensure high contrast for the identification of subnanometer thick flakes. Thin film transistors (TFTs) with structured source/drain and gate electrodes are fabricated following a designed procedure including steps of UV lithography, wet etching, and atomic layer deposited (ALD) dielectric. Successively, after the dissolution of the PVA sacrificial layer in water, the PMMA film, with the devices on top, can be transferred to another substrate of choice. Here, we transferred the devices on a polyimide plastic foil and studied the performance when tensile strain is applied parallel to the TFT channel. We measured an electron field effective mobility of 19 cm(2)/(V s), an I(on)/I(off)ratio greater than 10(6), a gate leakage current as low as 0.3 pA/μm, and a subthreshold swing of about 250 mV/dec. The devices continue to work when bent to a radius of 5 mm and after 10 consecutive bending cycles. The proposed fabrication strategy can be extended to any kind of 2D materials and enable the realization of electronic circuits and optical devices easily transferrable to any other support.

Enhancement of the photoprotection and nanomechanical properties of polycarbonate by deposition of thin ceramic coatings

NASA Astrophysics Data System (ADS)

Mailhot, B.; Rivaton, A.; Gardette, J.-L.; Moustaghfir, A.; Tomasella, E.; Jacquet, M.; Ma, X.-G.; Komvopoulos, K.

2006-05-01

The chemical reactions resulting from ultraviolet radiation produce discoloration and significant changes in the surface properties of polycarbonate (PC). To prevent photon absorption from irradiation and oxygen diffusion and to enhance the surface nanomechanical properties of PC, thin ceramic coatings of ZnO and Al2O3 (both single- and multi-layer) were deposited on bulk PC by radio-frequency magnetron sputtering. The samples were irradiated at wavelengths greater than 300 nm, representative of outdoor conditions. Despite the effectiveness of ZnO to protect PC from irradiation damage, photocatalytic oxidation at the PC/ZnO interface was the limiting factor. To overcome this deficiency, a thin Al2O3 coating was used both as intermediate and top layer because of its higher hardness and wear resistance than ZnO. Therefore, PC/Al2O3/ZnO, PC/ZnO/Al2O3, and PC/Al2O3/ZnO/Al2O3 layered media were fabricated and their photodegradation properties were examined by infrared and ultraviolet-visible spectroscopy. It was found that the photocatalytic activity at the PC/ZnO interface was reduced in the presence of the intermediate Al2O3 layer that limited the oxygen permeability. Nanomechanical experiments performed with a surface force apparatus revealed that the previous coating systems enhanced both the surface nanohardness and the elastic modulus and reduced the coefficient of friction in the order of ZnO, Al2O3, and Al2O3/ZnO/Al2O3. Although irradiation increased the nanohardness and the elastic modulus of PC, the irradiation effect on the surface mechanical properties of ceramic-coated PC was secondary.

Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering

NASA Astrophysics Data System (ADS)

Wang, Chun; Kryder, Mark H.

2009-09-01

Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.

The thermochemical structure and evolution of Earth's mantle: constraints and numerical models.

PubMed

Tackley, Paul J; Xie, Shunxing

2002-11-15

Geochemical observations place several constraints on geophysical processes in the mantle, including a requirement to maintain several distinct reservoirs. Geophysical constraints limit plausible physical locations of these reservoirs to a thin basal layer, isolated deep 'piles' of material under large-scale mantle upwellings, high-viscosity blobs/plums or thin strips throughout the mantle, or some combination of these. A numerical model capable of simulating the thermochemical evolution of the mantle is introduced. Preliminary simulations are more differentiated than Earth but display some of the proposed thermochemical processes, including the generation of a high-mu mantle reservoir by recycling of crust, and the generation of a high-(3)He/(4)He reservoir by recycling of residuum, although the resulting high-(3)He/(4)He material tends to aggregate near the top, where mid-ocean-ridge melting should sample it. If primitive material exists as a dense basal layer, it must be much denser than subducted crust in order to retain its primitive (e.g. high-(3)He) signature. Much progress is expected in the near future.

Microscopic observation of laser glazed yttria-stabilized zirconia coatings

NASA Astrophysics Data System (ADS)

Morks, M. F.; Berndt, C. C.; Durandet, Y.; Brandt, M.; Wang, J.

2010-08-01

Thermal barrier coatings (TBCs) are frequently used as insulation system for hot components in gas-turbine, combustors and power plant industries. The corrosive gases which come from combustion of low grade fuels can penetrate into the TBCs and reach the metallic components and bond coat and cause hot corrosion and erosion damage. Glazing the top coat by laser beam is advanced approach to seal TBCs surface. The laser beam has the advantage of forming a dense thin layer composed of micrograins. Plasma-sprayed yttria-stabilized zirconia (YSZ) coating was glazed with Nd-YAG laser at different operating conditions. The surface morphologies, before and after laser treatment, were investigated by scanning electron microscopy. Laser beam assisted the densification of the surface by remelting a thin layer of the exposed surface. The laser glazing converted the rough surface of TBCs into smooth micron-size grains with size of 2-9 μm and narrow grain boundaries. The glazed surfaces showed higher Vickers hardness compared to as-sprayed coatings. The results revealed that the hardness increases as the grain size decreases.

Thin noble metal films on Si (111) investigated by optical second-harmonic generation and photoemission

NASA Astrophysics Data System (ADS)

Pedersen, K.; Kristensen, T. B.; Pedersen, T. G.; Morgen, P.; Li, Z.; Hoffmann, S. V.

2002-05-01

Thin noble metal films (Ag, Au and Cu) on Si (111) have been investigated by optical second-harmonic generation (SHG) in combination with synchrotron radiation photoemission spectroscopy. The valence band spectra of Ag films show a quantization of the sp-band in the 4-eV energy range from the Fermi level down to the onset of the d-bands. For Cu and Au the corresponding energy range is much narrower and quantization effects are less visible. Quantization effects in SHG are observed as oscillations in the signal as a function of film thickness. The oscillations are strongest for Ag and less pronounced for Cu, in agreement with valence band photoemission spectra. In the case of Au, a reacted layer floating on top of the Au film masks the observation of quantum well levels by photoemission. However, SHG shows a well-developed quantization of levels in the Au film below the reacted layer. For Ag films, the relation between film thickness and photon energy of the SHG resonances indicates different types of resonances, some of which involve both quantum well and substrate states.

The fabrication of small molecule organic light-emitting diode pixels by laser-induced forward transfer

NASA Astrophysics Data System (ADS)

Shaw-Stewart, J. R. H.; Mattle, T.; Lippert, T. K.; Nagel, M.; Nüesch, F. A.; Wokaun, A.

2013-01-01

Laser-induced forward transfer (LIFT) is a versatile organic light-emitting diode (OLED) pixel deposition process, but has hitherto been applied exclusively to polymeric materials. Here, a modified LIFT process has been used to fabricate small molecule Alq3 organic light-emitting diodes (SMOLEDs). Small molecule thin films are considerably more mechanically brittle than polymeric thin films, which posed significant challenges for LIFT of these materials. The LIFT process presented here uses a polymeric dynamic release layer, a reduced environmental pressure, and a well-defined receiver-donor gap. The Alq3 pixels demonstrate good morphology and functionality, even when compared to conventionally fabricated OLEDs. The Alq3 SMOLED pixel performances show a significant amount of fluence dependence, not observed with polymerical OLED pixels made in previous studies. A layer of tetrabutyl ammonium hydroxide has been deposited on top of the aluminium cathode, as part of the donor substrate, to improve electron injection to the Alq3, by over 600%. These results demonstrate that this variant of LIFT is applicable for the deposition of functional small molecule OLEDs as well as polymeric OLEDs.

MIE Lidar proposed for the German Space Shuttle Mission D2

NASA Technical Reports Server (NTRS)

Renger, W.; Endemann, M.; Quenzel, H.; Werner, C.

1986-01-01

Firm plans for a second German Spacelab mission (D2-mission), originally scheduled for late 1988 is basically a zero-g mission, but will also include earth observation experiments. On board the D2-facility will allow performance of a number of different measurements with the goal to obtain performance data (cloud top heights, height of the planetary boundary layer, optical thickness, and cloud base height of thin and medium thick clouds, ice/water phase discriminatin for clouds, tropopause height, tropaspheric height, tropospheric aerosols, and stratospheric aerosols.

Diamond heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Bi, B.; Golding, B.

2015-02-24

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Thin Film Solar Cells: Organic, Inorganic and Hybrid

NASA Technical Reports Server (NTRS)

Dankovich, John

2004-01-01

Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive especially for space applications. Thin film photovoltaics have the potential to alleviate these problems and create a cheap and efficient way to harness the power of the sun.

Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

NASA Astrophysics Data System (ADS)

Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

Phosphor-Doped Thermal Barrier Coatings Deposited by Air Plasma Spray for In-Depth Temperature Sensing

PubMed Central

Peng, Di; Yang, Lixia; Cai, Tao; Liu, Yingzheng; Zhao, Xiaofeng; Yao, Zhiqi

2016-01-01

Yttria-stabilized zirconia (YSZ)-based thermal barrier coating (TBC) has been integrated with thermographic phosphors through air plasma spray (APS) for in-depth; non-contact temperature sensing. This coating consisted of a thin layer of Dy-doped YSZ (about 40 µm) on the bottom and a regular YSZ layer with a thickness up to 300 µm on top. A measurement system has been established; which included a portable; low-cost diode laser (405 nm); a photo-multiplier tube (PMT) and the related optics. Coating samples with different topcoat thickness were calibrated in a high-temperature furnace from room temperature to around 900 °C. The results convincingly showed that the current sensor and the measurement system was capable of in-depth temperature sensing over 800 °C with a YSZ top layer up to 300 µm. The topcoat thickness was found to have a strong effect on the luminescent signal level. Therefore; the measurement accuracy at high temperatures was reduced for samples with thick topcoats due to strong light attenuation. However; it seemed that the light transmissivity of YSZ topcoat increased with temperature; which would improve the sensor’s performance at high temperatures. The current sensor and the measurement technology have shown great potential in on-line monitoring of TBC interface temperature. PMID:27690037

ESS Smelting Technology

NASA Astrophysics Data System (ADS)

Erasmus, L. J.; Fourie, L. J.

2017-02-01

The envirosteel smelter is a rectangular furnace with a large free board volume and multiple channel inductors mounted below the hearth. The raw materials are charged against the back wall forming an inclined heap sloping toward the front long wall. The feed blend is spread in thin layers over the surface of the heap and is heated by exposure to radiation from the free board. Reducing conditions in the top layer of the heap permit gas-solid reduction. Metal, in the hearth of the furnace, flows into the channel inductor where it is heated. The heated metal flows back against the front long wall to under the heap. The bottom of the heap is continuously melted by energy transferred from the metal layer. The two off-gas ducts are located in the short end walls. The combustion air is heated to around 800°C by a furnace gas in an external heat exchanger.

Asymmetric organic-inorganic hybrid membrane formation via block copolymer-nanoparticle co-assembly.

PubMed

Gu, Yibei; Dorin, Rachel M; Wiesner, Ulrich

2013-01-01

A facile method for forming asymmetric organic-inorganic hybrid membranes for selective separation applications is developed. This approach combines co-assembly of block copolymer (BCP) and inorganic nanoparticles (NPs) with non-solvent induced phase separation. The method is successfully applied to two distinct molar mass BCPs with different fractions of titanium dioxide (TiO2) NPs. The resulting hybrid membranes exhibit structural asymmetry with a thin nanoporous surface layer on top of a macroporous fingerlike support layer. Key parameters that dictate membrane surface morphology include the fraction of inorganics used and the length of time allowed for surface layer development. The resulting membranes exhibit both good selectivity and high permeability (3200 ± 500 Lm(-2) h(-1) bar(-1)). This fast and straightforward synthesis method for asymmetric hybrid membranes provides a new self-assembly platform upon which multifunctional and high-performance organic-inorganic hybrid membranes can be formed.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

NASA Astrophysics Data System (ADS)

Tolosa, Maria D. Reyes; Damonte, Laura C.; Brine, Hicham; Bolink, Henk J.; Hernández-Fenollosa, María A.

2013-03-01

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition.

PubMed

Tolosa, Maria D Reyes; Damonte, Laura C; Brine, Hicham; Bolink, Henk J; Hernández-Fenollosa, María A

2013-03-23

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

PubMed Central

2013-01-01

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion. PMID:23522332

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

Low-reflective wire-grid polarizers with absorptive interference overlayers.

PubMed

Suzuki, Motofumi; Takada, Akio; Yamada, Takatoshi; Hayasaka, Takashi; Sasaki, Kouji; Takahashi, Eiji; Kumagai, Seiji

2010-04-30

Wire-grid (WG) polarizers with low reflectivity for visible light have been successfully developed. We theoretically consider the optical properties of simple sandwich structures of absorptive layer/transparent layer (gap layer)/high-reflective mirrors and found that it is possible to develop an antireflection (AR) coating owing to the interference along with the absorption in the absorptive layer. A wide variety of materials can be used for AR coatings by tuning the thicknesses of both the absorptive and the gap layers. This AR concept has been applied to reduce the reflectance of WG polarizers of Al. FeSi(2) as an absorptive layer has been deposited by the glancing angle deposition technique immediately on the top of Al wires covered with a thin SiO(2) layer as a gap layer. For the optimum combination of the thicknesses of FeSi(2) and SiO(2), the reflectance becomes lower than a few per cent, independent of the polarization, whereas the transmission polarization properties remain good. Because low-reflective (LR) WG polarizers are completely composed of inorganic materials, they are useful for applications requiring high-temperature durability such as liquid crystal projection displays.

Theoretical Study of Monolayer and Double-Layer Waveguide Love Wave Sensors for Achieving High Sensitivity.

PubMed

Li, Shuangming; Wan, Ying; Fan, Chunhai; Su, Yan

2017-03-22

Love wave sensors have been widely used for sensing applications. In this work, we introduce the theoretical analysis of the monolayer and double-layer waveguide Love wave sensors. The velocity, particle displacement and energy distribution of Love waves were analyzed. Using the variations of the energy repartition, the sensitivity coefficients of Love wave sensors were calculated. To achieve a higher sensitivity coefficient, a thin gold layer was added as the second waveguide on top of the silicon dioxide (SiO₂) waveguide-based, 36 degree-rotated, Y-cut, X-propagating lithium tantalate (36° YX LiTaO₃) Love wave sensor. The Love wave velocity was significantly reduced by the added gold layer, and the flow of wave energy into the waveguide layer from the substrate was enhanced. By using the double-layer structure, almost a 72-fold enhancement in the sensitivity coefficient was achieved compared to the monolayer structure. Additionally, the thickness of the SiO₂ layer was also reduced with the application of the gold layer, resulting in easier device fabrication. This study allows for the possibility of designing and realizing robust Love wave sensors with high sensitivity and a low limit of detection.

Radiative Forcing by Contrails

NASA Technical Reports Server (NTRS)

Meerkoetter, R.; Schumann, U.; Doelling, D. R.; Nakajima, T.; Tsushima, Y.

1999-01-01

A parametric study of the instantaneous radiative impact of contrails is presented using three different radiative transfer models for a series of model atmospheres and cloud parameters. Contrails are treated as geometrically and optically thin plane parallel homogeneous cirrus layers in a static atmospheres The ice water content is varied as a function of ambient temperature. The model atmospheres include tropical, mid-latitude, and subarctic summer and winter atmospheres Optically thin contrails cause a positive net forcing at top of the atmosphere. At the surface the radiative forcing is negative during daytime. The forcing increases with the optical depth and the amount of contrail cover. At the top of the atmosphere a mean contrail cover of 0.1% with average optical depth of 0.2 to 0.5 causes about 0.01 to 0.03 W/m(exp 2)a daily mean instantaneous radiative forcing. Contrails cool the surface during the day and heat the surface during the night, and hence reduce the daily temperature amplitude The net effect depends strongly on the daily variation of contrail cloud cover. The indirect radiative forcing due to particle changes in natural cirrus clouds may be of the same magnitude as the direct one due to additional cover.

Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching

NASA Technical Reports Server (NTRS)

Wurzbach, J. A.; Grunthaner, F. J.

1983-01-01

It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.

Sensitivity of Cirrus Bidirectional Reflectance at MODIS Bands to Vertical Inhomogeneity of Ice Crystal Habits and Size Distribution

NASA Technical Reports Server (NTRS)

Yang, P.; Gao, B.-C.; Baum, B. A.; Wiscombe, W.; Hu, Y.; Nasiri, S. L.; Soulen, P. F.; Heymsfield, A. J.; McFarquhar, G. M.; Miloshevich, L. M.

2000-01-01

A common assumption in satellite imager-based cirrus retrieval algorithms is that the radiative properties of a cirrus cloud may be represented by those associated with a specific ice crystal shape (or habit) and a single particle size distribution. However, observations of cirrus clouds have shown that the shapes and sizes of ice crystals may vary substantially with height within the clouds. In this study we investigate the sensitivity of the top-of-atmosphere bidirectional reflectances at two MODIS bands centered at 0.65 micron and 2.11 micron to the cirrus models assumed to be either a single homogeneous layer or three distinct but contiguous, layers. First, we define the single- and three-layer cirrus cloud models with respect to ice crystal habit and size distribution on the basis of in situ replicator data acquired during the First ISCCP Regional Experiment (FIRE-II), held in Kansas during the fall of 1991. Subsequently, fundamental light scattering and radiative transfer theory is employed to determine the single scattering and the bulk radiative properties of the cirrus cloud. Regarding the radiative transfer computations, we present a discrete form of the adding/doubling principle by introducing a direct transmission function, which is computationally straightforward and efficient an improvement over previous methods. For the 0.65 micron band, at which absorption by ice is negligible, there is little difference between the bidirectional reflectances calculated for the one- and three-layer cirrus models, suggesting that the vertical inhomogeneity effect is relatively unimportant. At the 2.11 micron band, the bidirectional reflectances computed for both optically thin (tau = 1) and thick (tau = 10) cirrus clouds show significant differences between the results for the one- and three-layer models. The reflectances computed for the three-layer cirrus model are substantially larger than those computed for the single-layer cirrus. Finally, we find that cloud reflectance is very sensitive to the optical properties of the small crystals that predominate in the top layer of the three-layer cirrus model. It is critical to define the most realistic geometric shape for the small "quasi-spherical" ice crystals in the top layer for obtaining reliable single-scattering parameters and bulk radiative properties of cirrus.

Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

PubMed Central

Jeon, Jin-Woo; Choi, Wonsuk; Shin, Young-Gwan; Ji, Suk-Young

2018-01-01

In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO) thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively. PMID:29601515

A baseline for upper crustal velocity variations along the East Pacific Rise at 13 deg N

NASA Astrophysics Data System (ADS)

Kappus, Mary E.; Harding, Alistair J.; Orcutt, John A.

1995-04-01

A wide aperture profile of the East Pacific Rise at 13 deg N provides data necessary to make a high-resolution seismic velocity profile of the uppermost crust along a 52-km segment of ridge crest. Automated and objective processing steps, including r-p analysis and waveform inversion, allow the construction of models in a consistent way so that comparisons are meaningful. A continuous profile is synthesized from 70 independent one-dimensional models spaced at 750-km intervals along the ridge. The resulting seismic velocity structure of the top 500 m of crust is remarkable in its lack of variability. The main features are a thin low-velocity layer 2A at the top with a steep gradient to layer 2B. The seafloor velocity is nearly constant at 2.45 km/s +/- 3% along the entire ridge. The velocity at the top of layer 2B is 5.0 km/s +/- 10%. The depth to the 4 km/s isovelocity contour within layer 2A is 130 +/- 20 m from 13 deg to 13 deg 20 min N, north of which it increases to 180 m. The increase in thickness is coincident with a deviation from axial linearity (DEVAL) noted by both a slight change in axis depth and orientation and in geochemistry. The waveform inversion, providing more details plus velocity gradient information, shows a layer 2A with about 80 m of constant-velocity material underlain by 150 m of high velocity gradient material, putting the base of layer 2A at approximately 230 m depth south of 13 deg 20 min N and about 50 m thicker north of the DEVAL. The overall lack of variability, combined with other recent measurements of layer 2A thickness along and near the axis, indicates that the thickness of volcanic extrusives is controlled not by levels of volcanic productivity, but the dynamics of emplacement. The homogeneity along axis also provides a baseline of inherent variability in crustal structure of about 10% against which other observed variations in similar regimes can be compared.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Space Research Results Purify Semiconductor Materials

NASA Technical Reports Server (NTRS)

2010-01-01

While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications.

PubMed

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-17

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

NASA Astrophysics Data System (ADS)

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-01

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Endolithic Microbial Life in Extreme Cold Climate: Snow Is Required, but Perhaps Less Is More

PubMed Central

Sun, Henry J.

2013-01-01

Cyanobacteria and lichens living under sandstone surfaces in the McMurdo Dry Valleys require snow for moisture. Snow accumulated beyond a thin layer, however, is counterproductive, interfering with rock insolation, snow melting, and photosynthetic access to light. With this in mind, the facts that rock slope and direction control colonization, and that climate change results in regional extinctions, can be explained. Vertical cliffs, which lack snow cover and are perpetually dry, are devoid of organisms. Boulder tops and edges can trap snow, but gravity and wind prevent excessive buildup. There, the organisms flourish. In places where snow-thinning cannot occur and snow drifts collect, rocks may contain living or dead communities. In light of these observations, the possibility of finding extraterrestrial endolithic communities on Mars cannot be eliminated. PMID:24832803

Patch testing with thin-layer chromatograms of chamomile tea in patients allergic to sesquiterpene lactones.

PubMed

Lundh, Kerstin; Gruvberger, Birgitta; Möller, Halvor; Persson, Lena; Hindsén, Monica; Zimerson, Erik; Svensson, Ake; Bruze, Magnus

2007-10-01

Patients with contact allergy to sesquiterpene lactones (SLs) are usually hypersensitive to Asteraceae plant products such as herbal teas. The objective of this study was to show sensitizers in chamomile tea by patch testing with thin-layer chromatograms. Tea made from German chamomile was separated by thin-layer chromatography. Strips of the thin-layer chromatograms were used for patch testing SL-positive patients. 15 (43%) of 35 patients tested positively to 1 or more spots on the thin-layer chromatogram, with many individual reaction patterns. Patch testing with thin-layer chromatograms of German chamomile tea showed the presence of several allergens.

Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

NASA Astrophysics Data System (ADS)

Patil, Prasanna Dnyaneshwar

Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from 3 cm2 V-1 s-11 in SiO2 back gated device to 18 cm2 V-1 s-11 in top gated electrolyte devices. Similarly, subthreshold swing can be improved from 30 V/dec to 0.2 V/dec and on/off ratio can be increased from 102 to 103 by using an electrolyte as a top gate. These FETs were also tested as phototransistors. Our photo-response characterization indicate photo-responsivity 32 A/W with external quantum efficiency exceeding 103 % when excited with a 658 nm wavelength laser at room temperature. Our phototransistor also exhibit response times tens of micros with specific detectivity (D*) values reaching 1012 Jones. The CuIn7Se11 phototransistor properties can be further tuned & enhanced by applying a back gate voltage along with increased source drain bias. For example, photo-responsivity can gain substantial improvement up to 320 A/W upon application of a gate voltage (Vg = 30 V) and/or increased source-drain bias. The photo-responsivity exhibited by these photo detectors are at least an order of magnitude better than commercially available conventional Si based photo detectors coupled with response times that are orders of magnitude better than several other family of layered materials investigated so far. Further photocurrent generation mechanisms, effect of traps is discussed in detail.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Strong guided mode resonant local field enhanced visible harmonic generation in an azo-polymer resonant waveguide grating.

PubMed

Lin, Jian Hung; Tseng, Chun-Yen; Lee, Ching-Ting; Young, Jeff F; Kan, Hung-Chih; Hsu, Chia Chen

2014-02-10

Guided mode resonance (GMR) enhanced second- and third-harmonic generation (SHG and THG) is demonstrated in an azo-polymer resonant waveguide grating (RWG), comprised of a poled azo-polymer layer on top of a textured SU8 substrate with a thin intervening layer of TiO2. Strong SHG and THG outputs are observed by matching either in-coming fundamental- or out-going harmonic-wavelength to the GMR wavelengths of the azo-polymer RWG. Without the azo-polymer coating, pure TiO2 RWGs, do not generate any detectable SHG using a fundamental beam peak intensity of 2 MW/cm(2). Without the textured TiO2 layer, a planar poled azo-polymer layer results in 3650 times less SHG than the full nonlinear RWG structure under identical excitation conditions. Rigorous coupled-wave analysis calculations confirm that this enhancement of the nonlinear conversion is due to strong local electric fields that are generated at the interfaces of the TiO2 and azo-polymer layers when the RWG is excited at resonant wavelengths associated with both SHG and THG conversion processes.

Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Ibrahim, Shaimaa Moustafa; Amin, Mohamed

2017-07-01

A novel silicon-based optical microcavity composed of a defect layer sandwiched between two parallel rugate mirrors is created by the electrochemical anodization of silicon in a hydrofluoric acid-based electrolyte using a precisely controlled current density profile. The profile consists of two sinusoidally modulated current waveforms separated by a fixed current that is applied to produce a defect layer between the mirrors. The spectral response of the rugate-based microcavity is simulated using the transfer matrix method and compared to the conventional Bragg-based microcavity. It is found that the resonance position of both microcavities is unchanged. However, the rugate-based microcavity exhibits a distinct reduction of the sidebands' intensity. Further attenuation of the sidebands' intensity is obtained by creating refractive index matching layers with optimized thickness at the bottom and top of the rugate-based microcavity. In order to stabilize the produced microcavity against natural oxidation, atomic layer deposition of an ultra-thin titanium dioxide layer on the pore wall is carried out followed by thermal annealing. The microcavity resonance position shows an observable sensitivity to the deposition and annealing processes.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

DOEpatents

Wang, Zhong Lin; Hu, Youfan; Zhang, Yan; Xu, Chen; Zhu, Guang

2014-09-09

A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Facies implications of Trichichnus and Chondrites in turbidites and hemipelagites, Marnoso-arenacea Formation (Miocene), northern Apennines, Italy

DOE Office of Scientific and Technical Information (OSTI.GOV)

McBride, E.F.; Picard, M.D.

Trichichnus, a thread-like burrow possibly the work of sipunculan worms, is widespread in Bouma E (turbidite claystone) and H (hemipelagic claystone) layers and some thin turbidite sandstone beds in basin-plain and outer fan-lobe deposits of the Marnoso-arenacea Formation. Trichichnus closely resembles that described elsewhere in chalk and marlstone, although the burrows are smaller (mean diameter=0.13 mm) and burrow curvature is tighter. Trichichnus fills are darker than the host claystone because of high organic content and disseminated pyrite. Any distinctive internal structure of the burrow wall or fill was destroyed by pyrite growth. Trichichnus is most abundant in Bouma E layers,more » where burrow spacing ranges from 0.4 to 50 cm and burrows extend to depths of 160 cm. The Trichichnus maker commonly burrowed vertically down through E and D layers (clay and silt) and then horizontally on top of C layers (sand). The burrows also vertically penetrate Bouma C sandstone layers up to 6 cm thick, but they are rare in beds thicker than 3 cm. They are less abundant or not well displayed in H layers where Chondrites predominates. Trichichnus overprints Chondrites. Following deposition of the Contessa megaturbidite, which exceeds 9 m in thickness, the sediment surface was repopulated chiefly by Trichichnus and Chondrites producers. Trichichnus extends 160 cm below the top of the Contessa, whereas Chondrites extend only to 64 cm. This suggests a greater tolerance of Trichichnus makers to low in situ oxygen levels. The near absence of laminations in the E division of the Contessa megabed may be the result of Trichichnus burrows that were not pyritized and which lack textural identity.« less

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Morphologies of femtosecond laser ablation of ITO thin films using gaussian or quasi-flat top beams for OLED repair

NASA Astrophysics Data System (ADS)

Kim, Hoon-Young; Choi, Won-Suk; Ji, Suk-Young; Shin, Young-Gwan; Jeon, Jin-Woo; Ahn, Sanghoon; Cho, Sung-Hak

2018-02-01

This study compares the ablation morphologies obtained with a femtosecond laser of both Gaussian and quasi-flat top beam profiles when applied to indium tin oxide (ITO) thin films for the purpose of OLED repair. A femtosecond laser system with a wavelength of 1030 nm and pulse duration of 190 fs is used to pattern an ITO thin film. The laser fluence is optimized for patterning at 1.38 J/cm2. The patterned ITO thin film is then evaluated through both optical microscope and atomic force microscope. Ablations with a square quasi-flat top beam are demonstrated using slits with varying x- y axes. With the Gaussian beam, the pattern width of the ablated area is shown to range from 9.17 to 9.99 μm when the number of irradiation pulse increases from one to six. In contrast, when slit control is used to obtain a quasi-flat top beam, the ablated pattern width remains constant at 10 μm, despite the increase in the number of pulse. The improved surface roughness is correlated with the quasi-flat top beam through measured Ra values. Furthermore, when using the Gaussian beam, the minimum resolution of the controllable ablation depth on the ITO thin film is found to be 60 nm. In contrast, when the quasi-flat top beam is used, the minimum ablation depth decreases to 40 nm.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

A Model for Particle Microphysics,Turbulent Mixing, and Radiative Transfer in the Stratocumulus-Topped Marine Boundary Layer and Comparisons with Measurements

NASA Technical Reports Server (NTRS)

Ackerman, Andrew S.; Toon, Owen B.; Hobbs, Peter V.

1995-01-01

A detailed 1D model of the stratocumulus-topped marine boundary layer is described. The model has three coupled components: a microphysics module that resolves the size distributions of aerosols and cloud droplets, a turbulence module that treats vertical mixing between layers, and a multiple wavelength radiative transfer module that calculates radiative heating rates and cloud optical properties. The results of a 12-h model simulation reproduce reasonably well the bulk thermodynamics, microphysical properties, and radiative fluxes measured in an approx. 500-m thick, summertime marine stratocumulus cloud layer by Nicholls. However, in this case, the model predictions of turbulent fluxes between the cloud and subcloud layers exceed the measurements. Results of model simulations are also compared to measurements of a marine stratus layer made under gate conditions and with measurements of a high, thin marine stratocumulus layer. The variations in cloud properties are generally reproduced by the model, although it underpredicts the entrainment of overlying air at cloud top under gale conditions. Sensitivities of the model results are explored. The vertical profile of cloud droplet concentration is sensitive to the lower size cutoff of the droplet size distribution due to the presence of unactivated haze particles in the lower region of the modeled cloud. Increases in total droplet concentrations do not always produce less drizzle and more cloud water in the model. The radius of the mean droplet volume does not correlate consistently with drizzle, but the effective droplet radius does. The greatest impacts on cloud properties predicted by the model are produced by halving the width of the size distribution of input condensation nuclei and by omitting the effect of cloud-top radiative cooling on the condensational growth of cloud droplets. The omission of infrared scattering produces noticeable changes in cloud properties. The collection efficiencies for droplets less than 30-micron radius, and the value of the accommodation coefficient for condensational droplet growth, have noticeable effects on cloud properties. The divergence of the horizontal wind also has a significant effect on a 12-h model simulation of cloud structure. Conclusions drawn from the model are tentative because of the limitations of the 1D model framework. A principal simplification is that the model assumes horizontal homogeneity, and, therefore, does not resolve updrafts and downdrafts. Likely consequences of this simplification include overprediction of the growth of droplets by condensation in the upper region of the cloud, underprediction of droplet condensational growth in the lower region of the cloud, and under-prediction of peak supersaturations.

A Model for Particle Microphysics, Turbulent Mixing, and Radiative Transfer in the Stratocumulus-Topped Marine Boundary Layer and Comparisons with Measurements

NASA Technical Reports Server (NTRS)

Ackerman, Andrew S.; Toon, Owen B.; Hobbs, Peter V.

1995-01-01

A detailed 1D model of the stratocumulus-topped marine boundary layer is described. The model has three coupled components: a microphysics module that resolves the size distributions of aerosols and cloud droplets, a turbulence module that treats vertical mixing between layers, and a multiple wavelength radiative transfer module that calculates radiative heating rates and cloud optical properties. The results of a 12-h model simulation reproduce reasonably well the bulk thermodynamics, microphysical properties, and radiative fluxes measured in an approx. 500-m thick, summertime marine stratocumulus cloud layer by Nicholls. However, in this case, the model predictions of turbulent fluxes between the cloud and subcloud layers exceed the measurements. Results of model simulations are also compared to measurements of a marine stratus layer made under gale conditions and with measurements of a high, thin marine stratocumulus layer. The variations in cloud properties are generally reproduced by the model, although it underpredicts the entrainment of overlying air at cloud top under gale conditions. Sensitivities of the model results are explored. The vertical profile of cloud droplet concentration is sensitive to the lower size cutoff of the droplet size distribution due to the presence of unactivated haze particles in the lower region of the modeled cloud. Increases in total droplet concentrations do not always produce less drizzle and more cloud water in the model. The radius of the mean droplet volume does not correlate consistently with drizzle, but the effective droplet radius does. The greatest impacts on cloud properties predicted by the model are produced by halving the width of the size distribution of input condensation nuclei and by omitting the effect of cloud-top radiative cooling on the condensational growth of cloud droplets. The omission of infrared scattering produces noticeable changes in cloud properties. The collection efficiencies for droplets less than 30-micrometers radius, and the value of the accommodation coefficient for condensational droplet growth, have noticeable effects on cloud properties. The divergence of the horizontal wind also has a significant effect on a 12-h model simulation of cloud structure. Conclusions drawn from the model are tentative because of the limitations of the 1D model framework. A principal simplification is that the model assumes horizontal homogeneity, and, therefore, does not resolve updrafts and downdrafts. Likely consequences of this simplification include overprediction of the growth of droplets by condensation in the upper region of the cloud, underprediction of droplet condensational growth in the lower region of the cloud, and underprediction of peak supersaturations.

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Understanding the Structure of High-K Gate Oxides - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-25

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

A Jovian Hotspot in True and False Colors (Time set 3)

NASA Technical Reports Server (NTRS)

1997-01-01

True and false color views of an equatorial 'hotspot' on Jupiter. These images cover an area 34,000 kilometers by 11,000 kilometers. The top mosaic combines the violet (410 nanometers or nm) and near-infrared continuum (756 nm) filter images to create an image similar to how Jupiter would appear to human eyes. Differences in coloration are due to the composition and abundances of trace chemicals in Jupiter's atmosphere. The bottom mosaic uses Galileo's three near-infrared wavelengths (756 nm, 727 nm, and 889 nm displayed in red, green, and blue) to show variations in cloud height and thickness. Bluish clouds are high and thin, reddish clouds are low, and white clouds are high and thick. The dark blue hotspot in the center is a hole in the deep cloud with an overlying thin haze. The light blue region to the left is covered by a very high haze layer. The multicolored region to the right has overlapping cloud layers of different heights. Galileo is the first spacecraft to distinguish cloud layers on Jupiter.

North is at the top. The mosaics cover latitudes 1 to 10 degrees and are centered at longitude 336 degrees West. The planetary limb runs along the right edge of the image. Cloud patterns appear foreshortened as they approach the limb. The smallest resolved features are tens of kilometers in size. These images were taken on December 17, 1996, at a range of 1.5 million kilometers by the Solid State Imaging system aboard NASA's Galileo spacecraft.

The Jet Propulsion Laboratory, Pasadena, CA manages the mission for NASA's Office of Space Science, Washington, DC.

This image and other images and data received from Galileo are posted on the World Wide Web, on the Galileo mission home page at URL http://galileo.jpl.nasa.gov. Background information and educational context for the images can be found at URL http://www.jpl.nasa.gov/galileo/sepo

A Jovian Hotspot in True and False Colors (Time set 1)

NASA Technical Reports Server (NTRS)

1997-01-01

True and false color views of an equatorial 'hotspot' on Jupiter. These images cover an area 34,000 kilometers by 11,000 kilometers. The top mosaic combines the violet (410 nanometers or nm) and near-infrared continuum (756 nm) filter images to create an image similar to how Jupiter would appear to human eyes. Differences in coloration are due to the composition and abundances of trace chemicals in Jupiter's atmosphere. The bottom mosaic uses Galileo's three near-infrared wavelengths (756 nm, 727 nm, and 889 nm displayed in red, green, and blue) to show variations in cloud height and thickness. Bluish clouds are high and thin, reddish clouds are low, and white clouds are high and thick. The dark blue hotspot in the center is a hole in the deep cloud with an overlying thin haze. The light blue region to the left is covered by a very high haze layer. The multicolored region to the right has overlapping cloud layers of different heights. Galileo is the first spacecraft to distinguish cloud layers on Jupiter.

North is at the top. The mosaics cover latitudes 1 to 10 degrees and are centered at longitude 336 degrees West. The smallest resolved features are tens of kilometers in size. These images were taken on December 17, 1996, at a range of 1.5 million kilometers by the Solid State Imaging system aboard NASA's Galileo spacecraft.

The Jet Propulsion Laboratory, Pasadena, CA manages the mission for NASA's Office of Space Science, Washington, DC.

This image and other images and data received from Galileo are posted on the World Wide Web, on the Galileo mission home page at URL http://galileo.jpl.nasa.gov. Background information and educational context for the images can be found at URL http://www.jpl.nasa.gov/galileo/sepo

In-situ vacuum deposition technique of lithium on neutron production target for BNCT

NASA Astrophysics Data System (ADS)

Ishiyama, S.; Baba, Y.; Fujii, R.; Nakamura, M.; Imahori, Y.

2012-10-01

For the purpose of avoiding the radiation blistering of the lithium target for neutron production in BNCT (Boron Neutron Capture Therapy) device, trilaminar Li target, of which palladium thin layer was inserted between cupper substrate and Li layer, was newly designed. In-situ vacuum deposition and electrolytic coating techniques were applied to validate the method of fabrication of the Li/Pd/Cu target, and the layered structures of the synthesized target were characterized. In-situ vacuum re-deposition technique was also established for repairing and maintenance for lithium target damaged. Following conclusions were derived; (1) Uniform lithium layers with the thickness from 1.6 nm to a few hundreds nanometer were formed on Pd/Cu multilayer surface by in situ vacuum deposition technique using metallic lithium as a source material. (2) Re-deposition of lithium layer on Li surface can be achieved by in situ vacuum deposition technique. (3) Small amount of water and carbonate was observed on the top surface of Li. But the thickness of the adsorbed layer was less than monolayer, which will not affect the quality of the Li target. (4) The formation of Pd-Li alloy layer was observed at the Pd and Li interface. The alloy layer would contribute to the stability of the Li layer.

Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

NASA Astrophysics Data System (ADS)

Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

2018-05-01

Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

Recent advances in small molecule OLED-on-silicon microdisplays

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.; Ali, Tariq A.; Khayrullin, Ilyas; Vazan, Fridrich; Prache, Olivier F.; Wacyk, Ihor

2009-08-01

High resolution OLED-on-silicon microdisplay technology is unique and challenging since it requires very small subpixel dimensions (~ 2-5 microns). eMagin's OLED microdisplay is based on white top emitter architecture using small molecule organic materials. The devices are fabricated using high Tg materials. The devices are hermetically sealed with vacuum deposited thin film layers. LCD-type color filters are patterned using photolithography methods to generate primary R, G, B colors. Results of recent improvements in the OLED-on-silicon microdisplay technology, with emphasis on efficiencies, lifetimes, grey scale and CIE color coordinates for SVGA and SXGA resolution microdisplays is presented.

Evaluation of Satellite-Based Upper Troposphere Cloud Top Height Retrievals in Multilayer Cloud Conditions During TC4

NASA Technical Reports Server (NTRS)

Chang, Fu-Lung; Minnis, Patrick; Ayers, J. Kirk; McGill, Matthew J.; Palikonda, Rabindra; Spangenberg, Douglas A.; Smith, William L., Jr.; Yost, Christopher R.

2010-01-01

Upper troposphere cloud top heights (CTHs), restricted to cloud top pressures (CTPs) less than 500 hPa, inferred using four satellite retrieval methods applied to Twelfth Geostationary Operational Environmental Satellite (GOES-12) data are evaluated using measurements during the July August 2007 Tropical Composition, Cloud and Climate Coupling Experiment (TC4). The four methods are the single-layer CO2-absorption technique (SCO2AT), a modified CO2-absorption technique (MCO2AT) developed for improving both single-layered and multilayered cloud retrievals, a standard version of the Visible Infrared Solar-infrared Split-window Technique (old VISST), and a new version of VISST (new VISST) recently developed to improve cloud property retrievals. They are evaluated by comparing with ER-2 aircraft-based Cloud Physics Lidar (CPL) data taken during 9 days having extensive upper troposphere cirrus, anvil, and convective clouds. Compared to the 89% coverage by upper tropospheric clouds detected by the CPL, the SCO2AT, MCO2AT, old VISST, and new VISST retrieved CTPs less than 500 hPa in 76, 76, 69, and 74% of the matched pixels, respectively. Most of the differences are due to subvisible and optically thin cirrus clouds occurring near the tropopause that were detected only by the CPL. The mean upper tropospheric CTHs for the 9 days are 14.2 (+/- 2.1) km from the CPL and 10.7 (+/- 2.1), 12.1 (+/- 1.6), 9.7 (+/- 2.9), and 11.4 (+/- 2.8) km from the SCO2AT, MCO2AT, old VISST, and new VISST, respectively. Compared to the CPL, the MCO2AT CTHs had the smallest mean biases for semitransparent high clouds in both single-layered and multilayered situations whereas the new VISST CTHs had the smallest mean biases when upper clouds were opaque and optically thick. The biases for all techniques increased with increasing numbers of cloud layers. The transparency of the upper layer clouds tends to increase with the numbers of cloud layers.

Current-voltage characteristics of organic semiconductors: Interfacial control between organic layers and electrodes

NASA Astrophysics Data System (ADS)

Kondo, Takeshi

2007-12-01

Current-voltage (I-V) characteristics of organic molecular glasses and solution processable materials embedded between two electrodes were studied to find materials possessing high charge-carrier mobilities and to design organic memory devices. The comparison studies between TOF, FET and SCLC measurements confirm the validity of using analyses of I-V characteristics to determine the mobility of organic semiconductors. Hexaazatrinaphthylene derivatives tri-substituted by electron withdrawing groups were characterized as potential electron transporting molecular glasses. The presence of two isomers has important implications for film morphology and effective mobility. The statistical isomer mixture of hexaazatrinaphthylene derivatized with pentafluoro-phenylmethyl ester is able to form amorphous films, and electron mobilities with the range of 10--2 cm2/Vs are observed in their I-V characteristics. Single-layer organic memory devices consisting of a polymer layer embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs) prepared by a solution-based surface assembly demonstrated a potential capability as nonvolatile organic memory device with high ON/OFF switching ratios of 10 4. This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Based upon the observed electrical characteristics, the currents of the low-resistance state can be attributed to a tunneling through low-resistance pathways of metal particles originating from the metal top electrode in the organic layer and that the high-resistance state is controlled by charge trapping by the metal particles including Ag-NDs. In an alternative approach, complex films of AgNO3: hexaazatrinaphthylene derivatives were studied as the active layers for all-solution processed and air-stable organic memory devices. Rewritable memory effects were observed in the devices comprised of a thin polymer dielectric layer deposited on the bottom electrode, the complex film, and a conducting polymer film as the top electrode. The electrical characteristics indicate that the accumulation of Ag+ ions at the interface of the complex film and the top electrode may contribute to the switching effect.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

PubMed

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

2013-01-18

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

Above-Cloud Precipitable Water Retrievals using the MODIS 0.94 micron Band with Applications for Multi-Layer Cloud Detection

NASA Technical Reports Server (NTRS)

Platnick, S.; Wind, G.

2004-01-01

In order to perform satellite retrievals of cloud properties, it is important to account for the effect of the above-cloud atmosphere on the observations. The solar bands used in the operational MODIS Terra and Aqua cloud optical and microphysical algorithms (visible, NIR, and SWIR spectral windows) are primarily affected by water vapor, and to a lesser extent by well-mixed gases. For water vapor, the above-cloud column amount, or precipitable water, provides adequate information for an atmospheric correction; details of the vertical vapor distribution are not typically necessary for the level of correction required. Cloud-top pressure has a secondary effect due to pressure broadening influences. For well- mixed gases, cloud-top pressure is also required for estimates of above-cloud abundances. We present a method for obtaining above-cloud precipitable water over dark Ocean surfaces using the MODIS 0.94 pm vapor absorption band. The retrieval includes an iterative procedure for establishing cloud-top temperature and pressure, and is useful for both single layer water and ice clouds. Knowledge of cloud thermodynamic phase is fundamental in retrieving cloud optical and microphysical properties. However, in cases of optically thin cirrus overlapping lower water clouds, the concept of a single unique phase is ill- defined and depends, at least, on the spectral region of interest. We will present a method for multi-layer and multi-phase cloud detection which uses above-cloud precipitable water retrievals along with several existing MODIS operational cloud products (cloud-top pressure derived from a C02 slicing algorithm, IR and SWIR phase retrievals). Results are catagorized by whether the radiative signature in the MODIS solar bands is primarily that of a water cloud with ice cloud contamination, or visa-versa. Examples in polar and mid-latitude regions will be shown.

Black carbon radiative forcing at TOA decreased during aging.

PubMed

Wu, Yu; Cheng, Tianhai; Zheng, Lijuan; Chen, Hao

2016-12-05

During aging processing, black carbon (also called soot) particles may tend to be mixed with other aerosols, and highly influence their radiative forcing. In this study, freshly emitted soot particles were simulated as fractal aggregates composed of small spherical primary monomers. After aging in the atmosphere, soot monomers were coated by a thinly layer of sulfate as thinly coated soot particles. These soot particles were entirely embedded into large sulfate particle by further aging, and becoming heavily coated soot particles. In clear-sky conditions, black carbon radiative forcing with different aging states were investigated for the bottom and top of atmosphere (BOA and TOA). The simulations showed that black carbon radiative forcing increased at BOA and decreased at TOA after their aging processes. Thinly and heavily coated states increased up to ~12% and ~35% black carbon radiative forcing at BOA, and black carbon radiative forcing at TOA can reach to ~20% and ~100% smaller for thinly and heavily coated states than those of freshly emitted states, respectively. The effect of aging states of black carbon radiative forcing was varied with surface albedo, aerosol optical depth and solar zenith angles. These findings would be helpful for the assessments of climate change.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Current distribution and ac susceptibility response of a thin superconducting disc in an axial field: a theoretical approach

NASA Astrophysics Data System (ADS)

Aruna, S. A.; Zhang, P.; Lin, F. Y.; Ding, S. Y.; Yao, X. X.

2000-04-01

Within the framework of the thermally activated process of the flux line or flux line bundles, and by time integration of the 1D equation of motion of the circulating current density icons/Journals/Common/vecJ" ALT="vecJ" ALIGN="TOP"/> (icons/Journals/Common/rho" ALT="rho" ALIGN="TOP"/> ,t ), which is suitable for thin superconducting films (R >>d ,icons/Journals/Common/le" ALT="le" ALIGN="TOP"/> icons/Journals/Common/lambda" ALT="lambda" ALIGN="TOP"/> ), we present numerical calculations of the current profiles, magnetization hysteresis loops and ac susceptibility icons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> n = icons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> ´n +iicons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> ´´n for n = 1, 3 and 5 of a thin disc immersed in an axial time-dependent external magnetic field Ba (t ) = Bdc +Bac cos(2icons/Journals/Common/pi" ALT="pi" ALIGN="TOP"/> icons/Journals/Common/nu" ALT="nu" ALIGN="TOP"/> t ). Our calculated results are compared with those of the critical state model (CSM) and found to prove the approximate validity of the CSM below the irreversibility field. The differences between our computed results and those of the CSM are also discussed.

The detection of enhanced carbon monoxide abundances in remotely sensed infrared spectra of a forest fire smoke plume

NASA Astrophysics Data System (ADS)

McMillan, W. W.; Strow, L. L.; Smith, W. L.; Revercomb, H. E.; Huang, H. L.

Nadir looking infrared spectra of a forest fire smoke plume off the south shore of Long Island, New York, were obtained from a NASA ER-2 aircraft during two spatially coincident over-flights on the morning of August 25, 1995. These spectra exhibit enhanced CO column densities at the same geographic locations over the smoke plume on both over-flights with a peak CO column density ˜2.6 × 1018 cm-2, ˜6σ above the clear air background. Meteorological conditions suggest the smoke plume was confined to the planetary boundary layer (PBL), pressures ≥ 850 mb, and perhaps to a thin region near the top of the PBL. Constraining the excess CO to the PBL yields a CO mixing ratio ˜1,400 ppbv. Further constraining the CO to the model layer nearest the top of the PBL, 852-878 mb, yields-4,300 ppbv. From the spatial overlap of the spectra, the estimated width of the CO rich portion of the plume is ≤ 2.8 km vs. a plume width of ˜5 km in GOES-8 satellite visible images.

STM studies of GeSi thin layers epitaxially grown on Si(111)

NASA Astrophysics Data System (ADS)

Motta, N.; Sgarlata, A.; De Crescenzi, M.; Derrien, J.

1996-08-01

Ge/Si alloys were prepared in UHV by solid phase epitaxy on Si(111) substrates. The alloy formation, as a function of the evaporation rate and the Ge layer thickness has been followed in situ by RHEED and scanning tunneling microscopy. The 5 × 5 surface reconstruction appeared after annealing at 450°C Ge layers (up to 10 Å thick), obtained from a low rate Knudsen cell evaporator. In this case a nearly flat and uniform layer of reconstructed alloy was observed. When using an e-gun high rate evaporator we needed to anneal the Ge layer up to 780°C to obtain a 5 × 5 reconstruction. The grown layer was not flat, with many steps and Ge clusters; at high coverages (10 Å and more) large Ge islands appeared. Moreover, we then succeeded in visualizing at atomic resolution the top of some of these Ge islands which displayed a 2 × 1 reconstruction, probably induced from the high compressive strain due to the lattice mismatch with the substrate. We suggest that this unusual behavior could be connected to the high evaporation rate, which helped the direct formation of Ge microcrystals on the Si substrate during the deposition process.

Inducing electric polarization in ultrathin insulating layers

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

Studies of ultrathin polar oxide films have attracted the interest of researchers for a long time due to their different properties compared to bulk materials. However they present several challenges such as the difficulty in the stabilization of the polar surfaces and the limited success in tailoring their properties. Moreover, recently developed Van der Waals materials have shown that the stacking of 2D-layers trigger new collective states thanks to the interaction between layers. Similarly, interface phenomena emerge in polar oxides, like induced ferroelectricity. This represents a promising way for the creation of new materials with customized properties that differ from those of the isolated layers. Here we present a new approach for the fabrication and study of atomically thin insulating films. We show that the properties of insulating polar layers of sodium chloride (NaCl) can be engineered when they are placed on top of a charge modulated template of copper nitride (Cu2N). STM studies carried out in ultra-high vacuum and at low temperatures over NaCl/Cu2N/Cu(001) show that we are able to build up and stabilize interfaces of polar surface at the limit of one atomic layer showing new properties not present before at the atomic scale.

Interface Optoelectronics Engineering for Mechanically Stacked Tandem Solar Cells Based on Perovskite and Silicon.

PubMed

Kanda, Hiroyuki; Uzum, Abdullah; Nishino, Hitoshi; Umeyama, Tomokazu; Imahori, Hiroshi; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2016-12-14

Engineering of photonics for antireflection and electronics for extraction of the hole using 2.5 nm of a thin Au layer have been performed for two- and four-terminal tandem solar cells using CH 3 NH 3 PbI 3 perovskite (top cell) and p-type single crystal silicon (c-Si) (bottom cell) by mechanically stacking. Highly transparent connection multilayers of evaporated-Au and sputtered-ITO films were fabricated at the interface to be a point-contact tunneling junction between the rough perovskite and flat silicon solar cells. The mechanically stacked tandem solar cell with an optimized tunneling junction structure was ⟨perovskite for the top cell/Au (2.5 nm)/ITO (154 nm) stacked-on ITO (108 nm)/c-Si for the bottom cell⟩. It was confirmed the best efficiency of 13.7% and 14.4% as two- and four-terminal devices, respectively.

Metallization of ultra-thin, non-thiol SAMs with flat-lying molecular units: Pd on 1, 4-dicyanobenzene.

PubMed

Eberle, Felix; Metzler, Martin; Kolb, Dieter M; Saitner, Marc; Wagner, Patrick; Boyen, Hans-Gerd

2010-09-10

Self-assembled monolayers of 1,4-dicyanobenzene on Au(111) electrodes are studied by cyclic voltammetry, in-situ STM and ex-situ XPS. High-resolution STM images reveal a long-range order of propeller-like assemblies each of which consists of three molecules, all lying flat on the gold substrate with the cyano groups oriented parallel to the metal surface. It is demonstrated that both functional groups can act as complexation sites for metal ions from solution. Surprisingly, such arrangements still allow the metal to be deposited on top of the molecules by electrochemical reduction despite the close vicinity to the Au surface. The latter is demonstrated by angle-resolved XPS which unequivocally shows that the metal indeed resides on top of the organic layer rather than underneath, despite the flat arrangement of the molecules.

A submicron device to rectify a square-wave angular velocity.

PubMed

Moradian, A; Miri, M F

2011-02-01

We study a system composed of two thick dielectric disks separated by a thin layer of an electrolyte solution. Initially both plates have the same surface charge distribution. The surface charge distribution has no rotational symmetry. We show that the top plate experiences a torque [Formula: see text]([Formula: see text]) if it rotates about its axis by an angle [Formula: see text] . The torque can be controlled by varying the electrolyte concentration, the separation and the surface charge density of the plates. For a specific example of charged rods attached to the plates, we find [Formula: see text]([Formula: see text]) [Formula: see text] sin(4[Formula: see text]) . We also study the dynamics of the system. We consider the case where the angular velocity of the bottom disk is a square-wave signal. We find that the average angular velocity of the top disk is not zero.

Adsorbed water and thin liquid films on Mars

NASA Astrophysics Data System (ADS)

Boxe, C. S.; Hand, K. P.; Nealson, K. H.; Yung, Y. L.; Yen, A. S.; Saiz-Lopez, A.

2012-07-01

At present, bulk liquid water on the surface and near-subsurface of Mars does not exist due to the scarcity of condensed- and gas-phase water, pressure and temperature constraints. Given that the nuclei of soil and ice, that is, the soil solid and ice lattice, respectively, are coated with adsorbed and/or thin liquid films of water well below 273 K and the availability of water limits biological activity, we quantify lower and upper limits for the thickness of such adsorbed/water films on the surface of the Martian regolith and for subsurface ice. These limits were calculated based on experimental and theoretical data for pure water ice and water ice containing impurities, where water ice containing impurities exhibit thin liquid film enhancements, ranging from 3 to 90. Close to the cold limit of water stability (i.e. 273 K), thin liquid film thicknesses at the surface of the Martian regolith is 0.06 nm (pure water ice) and ranges from 0.2 to 5 nm (water ice with impurities). An adsorbed water layer of 0.06 nm implies a dessicated surface as the thickness of one monolayer of water is 0.3 nm but represents 0.001-0.02% of the Martian atmospheric water vapour inventory. Taking into account the specific surface area (SSA) of surface-soil (i.e. top 1 mm of regolith and 0.06 nm adsorbed water layer), shows Martian surface-soil may contain interfacial water that represents 6-66% of the upper- and lower-limit atmospheric water vapour inventory and almost four times and 33%, the lower- and upper-limit Martian atmospheric water vapour inventory. Similarly, taking the SSA of Martian soil, the top 1 mm or regolith at 5 nm thin liquid water thickness, yields 1.10×1013 and 6.50×1013 litres of waters, respectively, 55-325 times larger than Mars' atmospheric water vapour inventory. Film thicknesses of 0.2 and 5 nm represent 2.3×104-1.5×106 litres of water, which is 6.0×10-7-4.0×10-4%, respectively, of a 10 pr μm water vapour column, and 3.0×10-6-4.0×10-4% and 6.0×10-6-8.0×10-4%, respectively, of the Martian atmospheric water vapour inventory. Thin liquid film thicknesses on/in subsurface ice were investigated via two scenarios: (i) under the idealistic case where it is assumed that the diurnal thermal wave is equal to the temperature of ice tens of centimetres below the surface, allowing for such ice to experience temperatures close to 273 K and (ii) under the, likely, realistic scenario where the diurnal thermal wave allows for the maximum subsurface ice temperature of 235 K at 1 m depth between 30°N and 30°S. Scenario 1 yields thin liquid film thicknesses ranging from 11 to 90 nm; these amounts represent 4×106-3.0×107 litres of water. For pure water ice, Scenario 2 reveals that the thickness of thin liquid films contained on/within Martian subsurface is less than 1.2 nm, several molecular layers thick. Conversely, via the effect of impurities at 235 K allows for a thin liquid film thickness on/within subsurface ice of 0.5 nm, corresponding to 6.0×104 litres of water. The existence of thin films on Mars is supported by data from the Mars Exploration Rovers (MERs) Spirit and Opportunity's Alpha Proton X-ray Spectrometer instrumentation, which have detected increased levels of bromine beneath the immediate surface, suggestive of the mobilization of soluble salts by thin films of liquid water towards local cold traps. These findings show that biological activity on the Martian surface and subsurface is not limited by nanometre dimensions of available water.

Multi-layered, chemically bonded lithium-ion and lithium/air batteries

DOEpatents

Narula, Chaitanya Kumar; Nanda, Jagjit; Bischoff, Brian L; Bhave, Ramesh R

2014-05-13

Disclosed are multilayer, porous, thin-layered lithium-ion batteries that include an inorganic separator as a thin layer that is chemically bonded to surfaces of positive and negative electrode layers. Thus, in such disclosed lithium-ion batteries, the electrodes and separator are made to form non-discrete (i.e., integral) thin layers. Also disclosed are methods of fabricating integrally connected, thin, multilayer lithium batteries including lithium-ion and lithium/air batteries.

Micropatterned Surfaces for Atmospheric Water Condensation via Controlled Radical Polymerization and Thin Film Dewetting.

PubMed

Wong, Ian; Teo, Guo Hui; Neto, Chiara; Thickett, Stuart C

2015-09-30

Inspired by an example found in nature, the design of patterned surfaces with chemical and topographical contrast for the collection of water from the atmosphere has been of intense interest in recent years. Herein we report the synthesis of such materials via a combination of macromolecular design and polymer thin film dewetting to yield surfaces consisting of raised hydrophilic bumps on a hydrophobic background. RAFT polymerization was used to synthesize poly(2-hydroxypropyl methacrylate) (PHPMA) of targeted molecular weight and low dispersity; spin-coating of PHPMA onto polystyrene films produced stable polymer bilayers under appropriate conditions. Thermal annealing of these bilayers above the glass transition temperature of the PHPMA layer led to complete dewetting of the top layer and the formation of isolated PHPMA domains atop the PS film. Due to the vastly different rates of water nucleation on the two phases, preferential dropwise nucleation of water occurred on the PHPMA domains, as demonstrated by optical microscopy. The simplicity of the preparation method and ability to target polymers of specific molecular weight demonstrate the value of these materials with respect to large-scale water collection devices or other materials science applications where patterning is required.

Chemical gradients in sediment cores from an EPA reference site off the Farallon Islands - Assessing chemical indicators of dredged material disposal in the deep sea

USGS Publications Warehouse

Bothner, Michael H.; Gill, P.W.; Boothman, W.S.; Taylor, B.B.; Karl, Herman A.

1998-01-01

Heavy metal and organic contaminants have been determined in undisturbed sediment cores from the US Environmental Protection Agency reference site for dredged material on the continental slope off San Francisco. As expected, the concentrations are significantly lower than toxic effects guidelines, but concentrations of PCBs, PAHs, Hg, Pb, and Clostridium perfringens (a bacterium spore found in sewage) were nearly two or more times greater in the surface sediments than in intervals deeper in the cores. These observations indicate the usefulness of measuring concentration gradients in sediments at the San Francisco deep ocean disposal site (SF-DODS) where a thin (0.5 cm thick) layer of dredged material has been observed beyond the boundary. This thin layer has not been chemically characterized by the common practice of homogenizing over the top 10 cm. An estimated 300 million cubic yards of dredged material from San Francisco Bay are expected to be discharged at the SF-DODS site during the next 50 years. Detailed depth analysis of sediment cores would add significant new information about the fate and effects of dredged material in the deep sea.

Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

PubMed

Mun, Seohyun; Park, Yoonkyung; Lee, Yong-Eun Koo; Sung, Myung Mo

2017-11-28

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

2016-07-01

This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

PubMed Central

Bak, Jun Yong; Kang, Youngho; Yang, Shinhyuk; Ryu, Ho-Jun; Hwang, Chi-Sun; Han, Seungwu; Yoon, Sung-Min

2015-01-01

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of VTH shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate VTH shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion. PMID:25601183

A Detailed Analysis of Visible Defects Formed in Commercial Silicon Thin-Film Modules During Outdoor Exposure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerber, Andreas; Johnston, Steve; Olivera-Pimentel, Guillermo

We analyzed defects in silicon thin-film tandem (a-Si:H/..mu..c-Si:H) modules from an outdoor installation in India. The inspection of several affected modules reveals that most of the defects -- which optically appear as bright spots -- were formed primarily nearby the separation and series connection laser lines. Cross-sectional SEM analysis reveals that the bright spots emerge due to electrical isolation, caused by a delamination of the cell from the front TCO in the affected area. In addition, the morphology of the a-Si:H top cell differs in the delaminated area compared to the surrounding unaffected area. We propose that these effects aremore » potentially caused by an explosive and thermally triggered liberation of hydrogen from the a-Si:H layer. Electrical and thermal measurements reveal that these defects can impact the cell performance significantly.« less

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

PubMed

Bak, Jun Yong; Kang, Youngho; Yang, Shinhyuk; Ryu, Ho-Jun; Hwang, Chi-Sun; Han, Seungwu; Yoon, Sung-Min

2015-01-20

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.

Vertical pillar-superlattice array and graphene hybrid light emitting diodes.

PubMed

Lee, Jung Min; Choung, Jae Woong; Yi, Jaeseok; Lee, Dong Hyun; Samal, Monica; Yi, Dong Kee; Lee, Chul-Ho; Yi, Gyu-Chul; Paik, Ungyu; Rogers, John A; Park, Won Il

2010-08-11

We report a type of device that combines vertical arrays of one-dimensional (1D) pillar-superlattice (PSL) structures with 2D graphene sheets to yield a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics. In this application, graphene sheets coated with very thin metal layers exhibit good mechanical and electrical properties and an ability to mount, in a freely suspended configuration, on the PSL arrays as a top window electrode. Optical characterization demonstrates that graphene exhibits excellent optical transparency even after deposition of the thin metal films. Thermal annealing of the graphene/metal (Gr/M) contact to the GaAs decreases the contact resistance, to provide enhanced carrier injection. The resulting PSL-Gr/M LEDs exhibit bright light emission over large areas. The result suggests the utility of graphene-based materials as electrodes in devices with unusual, nonplanar 3D architectures.

Resonant tunnelling in a quantum oxide superlattice

DOE PAGES

Choi, Woo Seok; Lee, Sang A.; You, Jeong Ho; ...

2015-06-24

Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO 3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switchingmore » typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10 5) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.« less

Structural evolution of self-ordered alumina tapered nanopores with 100 nm interpore distance

NASA Astrophysics Data System (ADS)

Li, Juan; Li, Congshan; Gao, Xuefeng

2011-10-01

We in-detail investigated the profile evolution processes of highly ordered alumina under the cyclic treatment of mild anodizing of aluminum foils in oxalic acid followed by etching in phosphoric acid. With the cyclic times increasing, the profiles of nanopores were gradually evolved into the parabola-like, trumpet-like and conical shape. Although the inserted etching itself nearly had no impact on the growth rate of the nanopores due to the rapid recovering of thinned barrier layer at the initial stage of next anodizing, overmuch etching could bring apparent side effects such as wall-breaking, thinning and taper-removing from the top down. The anodizing and etching kinetics and their synergetic effects in modulating different aspect ratios and open sizes of conical pores were studied systematically. These findings are helpful to tailor high-quality anodic alumina taper-pores with tunable profiles.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

PubMed

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Comparison Between Navier-Stokes and Thin-Layer Computations for Separated Supersonic Flow

NASA Technical Reports Server (NTRS)

Degani, David; Steger, Joseph L.

1983-01-01

In the numerical simulation of high Reynolds-number flow, one can frequently supply only enough grid points to resolve the viscous terms in a thin layer. As a consequence, a body-or stream-aligned coordinate system is frequently used and viscous terms in this direction are discarded. It is argued that these terms cannot be resolved and computational efficiency is gained by their neglect. Dropping the streamwise viscous terms in this manner has been termed the thin-layer approximation. The thin-layer concept is an old one, and similar viscous terms are dropped, for example, in parabolized Navier-Stokes schemes. However, such schemes also make additional assumptions so that the equations can be marched in space, and such a restriction is not usually imposed on a thin-layer model. The thin-layer approximation can be justified in much the same way as the boundary-layer approximation; it requires, therefore, a body-or stream-aligned coordinate and a high Reynolds number. Unlike the boundary-layer approximation, the same equations are used throughout, so there is no matching problem. Furthermore, the normal momentum equation is not simplified and the convection terms are not one-sided differenced for marching. Consequently, the thin-layer equations are numerically well behaved at separation and require no special treatment there. Nevertheless, the thin-layer approximation receives criticism. It has been suggested that the approximation is invalid at separation and, more recently, that it is inadequate for unsteady transonic flow. Although previous comparisons between the thin-layer and Navier-Stokes equations have been made, these comparisons have not been adequately documented.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Preparation and Characterization of Thin-Film Composite Membrane with Nanowire-Modified Support for Forward Osmosis Process

PubMed Central

Low, Ze-Xian; Liu, Qi; Shamsaei, Ezzatollah; Zhang, Xiwang; Wang, Huanting

2015-01-01

Internal concentration polarization (ICP) in forward osmosis (FO) process is a characteristic problem for asymmetric thin-film composite (TFC) FO membrane which leads to lower water flux. To mitigate the ICP effect, modification of the substrates’ properties has been one of the most effective methods. A new polyethersulfone-based ultrafiltration membrane with increased surface porosity and high water flux was recently produced by incorporating Zn2GeO4 nanowires. The composite membrane was used as a substrate for the fabrication of TFC FO membrane, by coating a thin layer of polyamide on top of the substrate. The substrate and the nanowires were characterized by a range of techniques such as SEM, XRD, and contact angle goniometry. The water permeability and molecular weight cut-offs (MWCO) of the substrate; and the FO performance of the TFC membrane were also determined. The Zn2GeO4-modified membrane showed ~45% increase in water permeability and NaCl salt rejection of 80% under RO mode. In FO mode, the ratio of water flux to reverse solute flux was also improved. However, lower FO flux was obtained which could be due to ICP. The result shows that Zn2GO4 nanowire may be used as a modifier to the substrate to improve the quality of the polyamide layer on the substrate to improve the flux and selectivity, but not as effective in reducing ICP. This work demonstrates that the incorporation of nanomaterials to the membrane substrate may be an alternative approach to improve the formation of polyamide skin layer to achieve better FO performance. PMID:25803239

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Bo, Baoxue; Ye, Jichun

2018-03-01

We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT:PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices.

Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance.

PubMed

Park, Jae Chul; Lee, Ho-Nyeon; Im, Seongil

2013-08-14

Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm(2) V(-1) s(-1), SS of ∼190 mV dec(-1), and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs.

Plasma-free atomic layer deposition of Ru thin films using H{sub 2} molecules as a nonoxidizing reactant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Seung-Joon; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr; Saito, Masayuki

2016-05-15

The ruthenium (Ru) thin films were grown by atomic layer deposition (ALD) using a sequential supply of dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C{sub 16}H{sub 22}O{sub 6}Ru) and H{sub 2} as a reactant at a substrate temperature of 250 °C. Deposition was possible using H{sub 2} molecules without a plasma by increasing the chamber pressure to above 10 Torr. Specifically, high-quality Ru films with a low resistivity of ∼40 μΩ cm and few amount of oxygen (∼1.2 at. %) were obtained under a chamber pressure of 300 Torr though the oxygen was contained in the precursor. Under the optimized conditions, self-limited film growth with regard to the precursormore » and reactant pulsing times was confirmed under elevated chamber pressures. The ALD-Ru process proposed in this study showed one of the highest growth rates of 0.12 nm/cycle on a thermally grown SiO{sub 2} substrate, as well as a very low number of incubation cycles (approximately 12 cycles). Cross-sectional view transmission electron microscopy showed that no interfacial oxide had formed during the deposition of the ALD-Ru films on a W surface using H{sub 2} molecules, whereas ∼7 nm thick interfacial oxide was formed when O{sub 2} molecules were used as a reactant. The step coverage of the ALD-Ru film onto very small-sized trenches (aspect ratio: ∼4.5 and the top opening size of 25 nm) and holes (aspect ratio: ∼40 and top opening size of 40 nm) was excellent (∼100%).« less

Three-dimensional photonic crystals as intermediate filter for thin-film tandem solar cells

NASA Astrophysics Data System (ADS)

Bielawny, Andreas; Miclea, Paul T.; Wehrspohn, Ralf B.; Lee, Seung-Mo; Knez, Mato; Rockstuhl, Carsten; Lisca, Marian; Lederer, Falk L.; Carius, Reinhard

2008-04-01

The concept of a 3D photonic crystal structure as diffractive and spectrally selective intermediate filter within 'micromorphous' (a-Si/μc-Si) tandem solar cells has been investigated numerically and experimentally. Our device aims for the enhancement of the optical pathway of incident light within the amorphous silicon top cell in its spectral region of low absorption. From our previous simulations, we expect a significant improvement of the tandem cell efficiency of about absolutely 1.3%. This increases the efficiency for a typical a-Si / μc-Si tandem cell from 11.1% to 12.4%, as a result of the optical current-matching of the two junctions. We suggest as wavelength-selective optical element a 3D-structured optical thin-film, prepared by self-organized artificial opal templates and replicated with atomic layer deposition. The resulting samples are highly periodic thin-film inverted opals made of conducting and transparent zinc-oxide. We describe the fabrication processes and compare experimental data on the optical properties in reflection and transmission with our simulations and photonic band structure calculations.

Visual gas sensors based on dye thin films and resonant waveguide gratings

NASA Astrophysics Data System (ADS)

Davoine, L.; Schnieper, M.; Barranco, A.; Aparicio, F. J.

2011-05-01

A colorimetric sensor that provides a direct visual indication of chemical contamination was developed. The detection is based on the color change of the reflected light after exposure to a gas or a liquid. The sensor is a combination of a chemically sensitive dye layer and a subwavelength grating structure. To enhance the perception of color change, a reference area sealed under a non-contaminated atmosphere is used and placed next to the sensor. The color change is clearly visible by human eyes. The device is based on photonic resonant effects; the visible color is a direct reflection of some incoming light, therefore no additional supplies are needed. This makes it usable as a standalone disposable sensor. The dye thin film is deposited by Plasma enhanced chemical vapor deposition (PECVD) on top of the subwavelength structure. The latter is made by combining a replication process of a Sol-Gel material and a thin film deposition. Lowcost fabrication and compatibility with environments where electricity cannot be used make this device very attractive for applications in hospitals, industries, with explosives and in traffic.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

The formation of hydrogen permeation barriers on steels by aluminising

NASA Astrophysics Data System (ADS)

Forcey, K. S.; Ross, D. K.; Wu, C. H.

1991-06-01

An extensive investigation has been carried out into the effectiveness of aluminised layers as permeation barriers on AISI 316L stainless and DIN 1.4914 martensitic steels. The study involved measurement of the hydrogen permeation rate through commercially aluminised steel discs of thicknesses in the range 1-1.6 mm, at temperatures between 250 and 600 °C and for an upstream hydrogen pressure of 10 5 Pa. The composition and structure of the aluminide layers were investigated by a number of techniques such as SEM, electron beam microprobe and X-ray diffraction. Accelerator based techniques such as RBS and NRA were employed to study the top micron or so of the surfaces of the samples. By these techniques it was found that the effectiveness of the permeation barrier depended on the formation of a thin surface oxide layer consisting of Al 2O 3. It was found that the permeation rate through the aluminised steels could be reduced by 3-4 orders of magnitude by forming a surface oxide layer up to a micron or so in thickness.

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells.

PubMed

Werner, Melanie; Keller, Debora; Haass, Stefan G; Gretener, Christina; Bissig, Benjamin; Fuchs, Peter; La Mattina, Fabio; Erni, Rolf; Romanyuk, Yaroslav E; Tiwari, Ayodhya N

2015-06-10

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

NASA Astrophysics Data System (ADS)

Margetis, J.; Mosleh, A.; Al-Kabi, S.; Ghetmiri, S. A.; Du, W.; Dou, W.; Benamara, M.; Li, B.; Mortazavi, M.; Naseem, H. A.; Yu, S.-Q.; Tolle, J.

2017-04-01

High quality, thick (up to 1.1 μm), strain relaxed GeSn alloys were grown on Ge-buffered Si (1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl4 and low-cost commercial GeH4 precursors. The significance of surface chemistry in regards to growth rate and Sn-incorporation is discussed by comparing growth kinetics data in H2 and N2 carrier gas. The role of carrier gas is also explored in the suppression of Sn surface segregation and evolution of layer composition and strain profiles via secondary ion mass spectrometry and X-ray diffraction. Transmission electron microscopy revealed the spontaneous compositional splitting and formation of a thin intermediate layer in which dislocations are pinned. This intermediate layer enables the growth of a thick, strain relaxed, and defect-free epitaxial layer on its top. Last, we present photoluminescence results which indicate that both N2 and H2 growth methods produce optoelectronic device quality material.

Optimization of L1{sub 0} FePt/Fe{sub 45}Co{sub 55} thin films for rare earth free permanent magnet applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giannopoulos, G., E-mail: g.giannopoulos@inn.demokritos.gr; Psycharis, V.; Niarchos, D.

The magnetic properties of magnetron sputtered bilayers consisting of Fe{sub 45}Co{sub 55} ultrathin layers on top of L1{sub 0} FePt films epitaxially grown on MgO substrates are studied in view of their possible application as rare earth free permanent magnets. It is found that FePt layers induce a tetragonal distortion to the Fe-Co layers which leads to increased anisotropy. This allows to take advantage of the Fe-Co high magnetic moment with less significant loss of the coercivity compared to a typical hard/soft exchange spring system. A maximum energy product approaching 50 MGOe is obtained for a FePt(7 ML)/FeCo/(5 ML) sample.more » The results are in accordance with first-principles computational methods, which predict that even higher energy products are possible for micromagnetically optimized microstructures.« less

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

ERIC Educational Resources Information Center

DeAngelis, Thomas P.; Heineman, William R.

1976-01-01

Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Cloud vertical profiles derived from CALIPSO and CloudSat and a comparison with MODIS derived clouds

NASA Astrophysics Data System (ADS)

Kato, S.; Sun-Mack, S.; Miller, W. F.; Rose, F. G.; Minnis, P.; Wielicki, B. A.; Winker, D. M.; Stephens, G. L.; Charlock, T. P.; Collins, W. D.; Loeb, N. G.; Stackhouse, P. W.; Xu, K.

2008-05-01

CALIPSO and CloudSat from the a-train provide detailed information of vertical distribution of clouds and aerosols. The vertical distribution of cloud occurrence is derived from one month of CALIPSO and CloudSat data as a part of the effort of merging CALIPSO, CloudSat and MODIS with CERES data. This newly derived cloud profile is compared with the distribution of cloud top height derived from MODIS on Aqua from cloud algorithms used in the CERES project. The cloud base from MODIS is also estimated using an empirical formula based on the cloud top height and optical thickness, which is used in CERES processes. While MODIS detects mid and low level clouds over the Arctic in April fairly well when they are the topmost cloud layer, it underestimates high- level clouds. In addition, because the CERES-MODIS cloud algorithm is not able to detect multi-layer clouds and the empirical formula significantly underestimates the depth of high clouds, the occurrence of mid and low-level clouds is underestimated. This comparison does not consider sensitivity difference to thin clouds but we will impose an optical thickness threshold to CALIPSO derived clouds for a further comparison. The effect of such differences in the cloud profile to flux computations will also be discussed. In addition, the effect of cloud cover to the top-of-atmosphere flux over the Arctic using CERES SSF and FLASHFLUX products will be discussed.

Bi-layer sandwich film for antibacterial catheters

PubMed Central

Schamberger, Florian; Zare, Hamideh Heidari; Bröskamp, Sara Felicitas; Jocham, Dieter

2017-01-01

Background: Approximately one quarter of all nosocomial infections can be attributed to the urinary tract. The infections are supposed to be mainly caused by implantations of urethral catheters and stents. A new catheter design is introduced with the aim to lower the high number of nosocomial urethral infections. In order to avoid limitations to use, the design is first applied to conventional commercially available balloon catheters. Results: The main feature of the design is a sandwich layer on both sides of the catheter wall, which is composed of a fragmented base layer of silver capped by a thin film of poly(p-xylylene). This top layer is mainly designed to release a controlled amount of Ag+ ions, which is bactericidal, but not toxic to humans. Simultaneously, the lifetime is prolonged to at least one year. The base layer is electrolessly deposited applying Tollens’ reagens, the cap layer is deposited by using chemical vapor deposition. Conclusion: The three main problems of this process, electroless deposition of a fragmented silver film on the surface of an electrically insulating organic polymer, irreproducible evaporation during heating of the precursor, and exponential decrease of the layer thickness along the capillary, have been solved trough the application of a simple electrochemical reaction and two standard principles of physics: Papin’s pot and the principle of Le Chatelier. PMID:29046846

Bi-layer sandwich film for antibacterial catheters.

PubMed

Franz, Gerhard; Schamberger, Florian; Zare, Hamideh Heidari; Bröskamp, Sara Felicitas; Jocham, Dieter

2017-01-01

Background: Approximately one quarter of all nosocomial infections can be attributed to the urinary tract. The infections are supposed to be mainly caused by implantations of urethral catheters and stents. A new catheter design is introduced with the aim to lower the high number of nosocomial urethral infections. In order to avoid limitations to use, the design is first applied to conventional commercially available balloon catheters. Results: The main feature of the design is a sandwich layer on both sides of the catheter wall, which is composed of a fragmented base layer of silver capped by a thin film of poly( p -xylylene). This top layer is mainly designed to release a controlled amount of Ag + ions, which is bactericidal, but not toxic to humans. Simultaneously, the lifetime is prolonged to at least one year. The base layer is electrolessly deposited applying Tollens' reagens, the cap layer is deposited by using chemical vapor deposition. Conclusion: The three main problems of this process, electroless deposition of a fragmented silver film on the surface of an electrically insulating organic polymer, irreproducible evaporation during heating of the precursor, and exponential decrease of the layer thickness along the capillary, have been solved trough the application of a simple electrochemical reaction and two standard principles of physics: Papin's pot and the principle of Le Chatelier.

A concept of wireless and passive very-high temperature sensor

NASA Astrophysics Data System (ADS)

Nicolay, P.; Matloub, R.; Bardong, J.; Mazzalai, A.; Muralt, P.

2017-05-01

There is a need for sensors capable operating at temperatures above 1000 °C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The cold junction of the thermocouple is electrically connected to a highly piezoelectric thin layer, deposited on top of a SAW substrate. In operation, the voltage generated by the temperature gradient between the hot (>1000 °C) and cold junction (<350 °C) generates a strain field in the layer, which is mechanically transmitted to the substrate. This modifies the SAW propagation conditions and therefore the sensors' radiofrequency response. The change depends on the applied voltage and thus on the hot junction temperature. As SAW devices are passive elements that can be remotely interrogated, it becomes possible to infer the hot junction temperature from the radiofrequency response, i.e., to remotely read temperatures above 1000 °C, without embedded electronics. In this paper, we demonstrate the feasibility of this concept, using AlN layers deposited on Y-Z Lithium Niobate (LN). The achieved sensitivity of 80 Hz/V at 400 MHz is constant over a wide voltage range. Numerical simulations were performed to compute the main properties of the demonstrators and suggest optimization strategies. Improvements are expected from the use of stronger piezoelectric layers, such as AlScN or Pb(Ti,Zr)O3 (PZT), which could increase the sensitivity by factors of 3 and 20, as estimated from their transverse piezoelectric coefficients. As a first step in this direction, thin PZT layers have been deposited on Y-Z LN.

The threshold strength of laminar ceramics utilizing molar volume changes and porosity

NASA Astrophysics Data System (ADS)

Pontin, Michael Gene

It has been shown that uniformly spaced thin compressive layers within a ceramic body can arrest the propagation of an otherwise catastrophic crack, producing a threshold strength: a strength below which the probability of failure is zero. Previous work has shown that the threshold strength increases with both the magnitude of the compressive stress and the fracture toughness of the thin layer material, and finite element analysis predicts that the threshold strength can be further increased when the elastic modulus of the compressive layer is much smaller than the thicker layer. The current work describes several new approaches to increase the threshold strength of a laminar ceramic system. The initial method utilized a molar volume expansion within the thin layers, produced by the tetragonal-to-monoclinic phase transformation of unstabilized zirconia during cooling, in order to produce large compressive stresses within the thin layers. High threshold strengths were measured for this system, but they remained relatively constant as the zirconia content was increased. It was determined that microcracking produced during the transformation reduced the magnitude of the compressive stresses, but may also have served to reduce the modulus of the thin compressive layer, providing an additional strengthening mechanism. The second approach studied the addition of porosity to reduce the elastic modulus of the thin compressive layers. A new processing method was created and analyzed, in which thick layers of the laminate were fabricated by tape-casting, and then dip-coated into a slurry, containing rice starch, to create thin porous compressive layers upon densification. The effects of porosity on the residual compressive stress, elastic modulus, and fracture toughness of the thin layers were measured and calculated, and it was found that the elastic modulus mismatch between the thin and thick layers produced a large strengthening effect for volume fractions of porosity below a critical level. Specimens with greater volume fractions of porosity exhibited complete crack arrest, typically followed by non-catastrophic failure, as cracks initiating in adjacent thick layers coalesced by cracking or delamination along the thin porous layers.

An Investigation of Instantaneous Plume Rise from Rocket Exhaust

DTIC Science & Technology

1996-12-01

METERS) TOP = 2973.48 BASE= 210.62 SIGMAR (AZ) AT THE SURFACE (DEGREES) 13.5054 SIGMER(EL) AT THE SURFACE (DEGREES) 2.9738 MET. WIND WIND LAYER WIND SPEED...SELECTED LAYER HEIGHT- (METERS) TOP = 2973.48 BASE= 210.62 SIGMAR (AZ) AT THE SURFACE (DEGREES) 13.6911 SIGMER(EL) AT THE SURFACE (DEGREES) 2.9738 MET...TIME (SECS) 368.08 FIRST MIXING LAYER HEIGHT- (METERS) TOP = 210.62 BASE= 0.00 SECOND SELECTED LAYER HEIGHT- (METERS) TOP = 2973.48 BASE= 210.62 SIGMAR

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Plasmon absorption modulator systems and methods

DOEpatents

Kekatpure, Rohan Deodatta; Davids, Paul

2014-07-15

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

Conductance control at the LaAlO{sub 3}/SrTiO{sub 3}-interface by a multiferroic BiFeO{sub 3} ad-layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mix, Christian; Finizio, Simone; Kläui, Mathias

2014-06-30

Multilayered BiFeO{sub 3} (BFO)/LaAlO{sub 3} (LAO) thin film samples were fabricated on SrTiO{sub 3} (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and amore » hysteretic behavior with respect to the voltages applied in the scanning process. This is evidence for the ferroelectric polarization of the multiferroic causing the resistance changes. Coupling the antiferromagnetic BFO layer to another ferromagnetic layer could enable a magnetic field control of the conductance of the quasi-2DEG at the LAO/STO interface.« less

Accelerating dewetting on deformable substrates by adding a liquid underlayer.

PubMed

Xu, Lin; Reiter, Günter; Shi, Tongfei; An, Lijia

2010-05-18

We investigated the dependence of the dewetting velocity of a thin, low-viscosity polystyrene (PS) top film on a poly(methyl methacrylate) (PMMA) double layer consisting of a low-viscosity underlayer of thickness h(L) coated with a high-viscosity middle layer of thickness h(M). The addition of the liquid underlayer generated complex nonmonotonic behavior of the dewetting velocity as a function of increasing h(M). In particular, we observed an acceleration of dewetting for an intermediate range of h(M). This phenomenon has been interpreted by a combination deformation of the middle elastic layer and a concurrent change in the contact angle. On one hand, deformation led to the formation of a trench that dissipated energy during its movement through the liquid underlayer and thus caused a slowing down of dewetting. However, with an increase in the thickness of the elastic middle layer, the size of the trench decreased and its influence on the dewetting velocity also decreased. On the other hand, the deformation of the elastic layer also led to an increase in the contact angle. This increase in the driving capillary forces caused an increase in the dewetting velocity.

Interfacial chemistry of a perfluoropolyether lubricant studied by XPS and TDS

NASA Technical Reports Server (NTRS)

Herrera-Fierro, Pilar C.; Jones, William R., Jr.; Pepper, Stephen V.

1992-01-01

The interfacial chemistry of Fomblin Z25, a commercial perfluoropolyether used as lubricant for space applications, with different metallic surfaces: 440C steel, gold and aluminum was studied. Thin layers of Fomblin Z25 were evaporated onto the oxide-free substrates and the interfacial chemistry studied using XPS and TDS. The reactions were induced by heating the substrate and by rubbing the substrate with a steel ball. Gold was found to be completely unreactive towards Fomblin at any temperature. Reaction at room temperature was observed only in the case of the aluminum substrate, the most reactive towards Fomblin Z25 of the substrates studied. It was necessary to heat the 440C steel substrate to 190 degree C to induce decomposition of the fluid. The degradation of the fluid was indicated by the formation of a debris layer at the interface. This debris layer, composed of inorganic and organic reaction products, when completely formed, passivated the surface from further attack to the Fromblin on top. The tribologically induced reactions on 440C steel formed a debris layer of similar chemical characteristics to the thermally induced layer. In all cases, the degradation reaction resulted in preferential consumption of the difluoroformyl carbon (-OCF2O-).

Microvalve-based microfluidic device for C. elegans manipulation

NASA Astrophysics Data System (ADS)

Johari, S.; Nock, V.; Alkaisi, M. M.; Wang, W.

2017-09-01

In this paper, we report on the integration of a force measurement application capable of continuously measuring the forces generated by C. elegans in motion with a series of controllable microvalves which have an additional ability to increase control over worm selection and manipulation. The three-layer device consists of a pneumatic layer at the top, and a fluidic layer at the bottom with a thin PDMS membrane which functions as a microvalve sandwiched in between. The pneumatic layer functions as valves, whose operation is controlled pneumatically. The fluidic layer contains of PDMS micropillars for resolving the worm force from the deflection of the cantilever-like pillars. The measured force is horizontal and equivalent to a point force acting at half of the pillar height. By carefully controlling the incorporated microvalves, the proposed device is able to select and direct worm movement and at the same time increase the number of force measurement results collected. The integration of the microvalve with the PDMS micropillar-based on chip system can be easily combined with existing screening and imaging systems and also has the capability to facilitate high-throughput screening of force patterns in C. elegans locomotion behaviour.

General method for simultaneous optimization of light trapping and carrier collection in an ultra-thin film organic photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Cheng-Chia, E-mail: ct2443@columbia.edu; Grote, Richard R.; Beck, Jonathan H.

2014-07-14

We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach ismore » applied here to a ultra-thin film solar cell with a SubPc/C{sub 60} photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980 mA/cm{sup 2} for 30 nm and 45 nm SubPc/C{sub 60} heterojunction layer thicknesses, respectively. These values correspond to a power conversion efficiency enhancement of 78% for the 30 nm thick cell, but only of 32% for a 45 nm thick cell, for which the overall photocurrent is actually higher. Applied to other material systems, the general optimization method can elucidate if light trapping strategies can improve a given cell architecture.« less

Effects on Ferroelectric Thin-Film Stacks and Devices for Piezoelectric MEMS Applications at Varied Total Ionizing Dose (TID)

DTIC Science & Technology

2017-03-01

Overall, the devices with IrO2 top electrode were less impacted by the irradiation compared to the Pt top electrode devices. Keywords: lead...displacement and ionization events. However, prior research has primarily concentrated only on the effects of irradiation as polarization degradation...thin films deposited on platinized silicon wafers, with IrO2 or Pt top electrodes. All samples were irradiated with 0.2, 0.5, 1, 2, 5, and 10

Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majumder, Apratim, E-mail: apratim.majumder@utah.edu; Wan, Xiaowen; Masid, Farhana

2016-06-15

Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes themore » underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the “exposing” beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137 nm for λ = 647 nm) using extremely low intensities (4-30 W/m{sup 2}, which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process.« less

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

A model for thin layer formation by delayed particle settling at sharp density gradients

NASA Astrophysics Data System (ADS)

Prairie, Jennifer C.; White, Brian L.

2017-02-01

Thin layers - regions where plankton or particles accumulate vertically on scales of a few meters or less - are common in coastal waters, and have important implications for both trophic dynamics and carbon cycling. These features can form by a variety of biological and physical mechanisms, including localized growth, shear-thinning, and directed swimming. An additional mechanism may result in the formation of thin layers of marine aggregates, which have been shown to decrease their settling velocity when passing through sharp density gradients, a behavior termed delayed settling. Here, we apply a simple vertical advection-diffusion model to predict the properties of aggregate thin layers formed by this process. We assume a constant vertical flux of particles from the surface, which is parameterized by observations from laboratory experiments with marine aggregates. The formation, maintenance, and shape of the layers are described in relation to non-dimensional numbers that depend on environmental conditions and particle settling properties. In particular, model results demonstrate layer intensity and sharpness both increase with higher Péclet number (Pe), that is, under conditions with weaker mixing relative to layer formation. Similarly, more intense and sharper layers are found when the delayed settling behavior of aggregates is characterized by a lower velocity minimum. The model also predicts layers that are vertically asymmetric and highly "peaky" when compared with a Gaussian distribution, features often seen in thin layers in natural environments. Lastly, by comparing model predictions with observations of thin layers in the field, we are able to gain some insight into the applicability of delayed settling as a thin layer formation mechanism in different environmental conditions.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Study of cerium diffusion in undoped lithium-6 enriched glass with Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Zhang, Xiaodong; Moore, Michael E.; Lee, Kyung-Min; Lukosi, Eric D.; Hayward, Jason P.

2016-07-01

Undoped lithium-6 enriched glasses coated with pure cerium (99.9%) with a gold protection layer on top were heated at three different temperatures (500, 550, and 600 °C) for varied durations (1, 2, and 4 h). Diffusion profiles of cerium in such glasses were obtained with the conventional Rutherford backscattering technique. Through fitting the diffusion profiles with the thin-film solution of Fick's second law, diffusion coefficients of cerium with different annealing temperatures and durations were solved. Then, the activation energy of cerium for the diffusion process in the studied glasses was found to be 114 kJ/mol with the Arrhenius equation.

Organometal halide perovskite light-emitting diodes with laminated carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Shan, Xin; Bade, Sri Ganesh R.; Geske, Thomas; Davis, Melissa; Smith, Rachel; Yu, Zhibin

2017-08-01

Organometal halide perovskite light-emitting diodes (LEDs) with laminated carbon nanotube (CNT) electrodes are reported. The LEDs have an indium tin oxide (ITO) bottom electrode, a screen printed methylammonium lead tribromide (MAPbBr3)/polymer composite thin film as the emissive layer, and laminated CNT as the top electrode. The devices can be turned on at 2.2 V, reaching a brightness of 4,960 cd m-2 and a current efficiency of 1.54 cd A-1 at 6.9 V. The greatly simplified fabrication process in this work can potentially lead to the scalable manufacturing of large size and low cost LED panels in the future.

Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates

PubMed Central

Yu, Yan; Jiang, Shenglin; Zhou, Wenli; Miao, Xiangshui; Zeng, Yike; Zhang, Guangzu; Liu, Sisi

2013-01-01

The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are “indirect” processes that require transfer steps. Moreover, previously reported “transfer-free” methods are only suitable for graphene and not for other few-layer 2-D thin flakes. Here, a friction based room temperature rubbing method is proposed for fabricating different types of few-layer 2-D thin flakes (graphene, hexagonal boron nitride (h-BN), molybdenum disulphide (MoS2), and tungsten disulphide (WS2)) on flexible polymer substrates. Commercial 2-D raw materials (graphite, h-BN, MoS2, and WS2) that contain thousands of atom layers were used. After several minutes, different types of few-layer 2-D thin flakes were fabricated directly on the flexible polymer substrates by rubbing procedures at room temperature and without any transfer step. These few-layer 2-D thin flakes strongly adhere to the flexible polymer substrates. This strong adhesion is beneficial for future applications. PMID:24045289

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Interfacial Chemical Composition and Molecular Order in Organic Photovoltaic Blend Thin Films Probed by Surface-Enhanced Raman Spectroscopy.

PubMed

Razzell-Hollis, Joseph; Thiburce, Quentin; Tsoi, Wing C; Kim, Ji-Seon

2016-11-16

Organic electronic devices invariably involve transfer of charge carriers between the organic layer and at least one metal electrode, and they are sensitive to the local properties of the organic film at those interfaces. Here, we demonstrate a new approach for using an advanced technique called surface-enhanced raman spectroscopy (SERS) to quantitatively probe interfacial properties relevant to charge injection/extraction. Exploiting the evanescent electric field generated by a ∼7 nm thick layer of evaporated silver, Raman scattering from nearby molecules is enhanced by factors of 10-1000× and limited by a distance dependence with a measured decay length of only 7.6 nm. When applied to the study of an all-polymer 1:1 blend of P3HT and F8TBT used in organic solar cells, we find that the as-cast film is morphologically suited to charge extraction in inverted devices, with a top (anode) interface very rich in hole-transporting P3HT (74.5%) and a bottom (cathode) interface slightly rich in electron-transporting F8TBT (55%). While conventional, uninverted P3HT:F8TBT devices are reported to perform poorly compared to inverted devices, their efficiency can be improved by thermal annealing but only after evaporation of a metallic top electrode. This is explained by changes in composition at the top interface: annealing prior to silver evaporation leads to a greater P3HT concentration at the top interface to 83.3%, exaggerating the original distribution that favored inverted devices, while postevaporation annealing increases the concentration of F8TBT at the top interface to 34.8%, aiding the extraction of electrons in a conventional device. By nondestructively probing buried interfaces, SERS is a powerful tool for understanding the performance of organic electronic devices.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

ERIC Educational Resources Information Center

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Epitaxial growth of thermally stable cobalt films on Au(111)

NASA Astrophysics Data System (ADS)

Haag, N.; Laux, M.; Stöckl, J.; Kollamana, J.; Seidel, J.; Großmann, N.; Fetzer, R.; Kelly, L. L.; Wei, Z.; Stadtmüller, B.; Cinchetti, M.; Aeschlimann, M.

2016-10-01

Ferromagnetic thin films play a fundamental role in spintronic applications as a source for spin polarized carriers and in fundamental studies as ferromagnetic substrates. However, it is challenging to produce such metallic films with high structural quality and chemical purity on single crystalline substrates since the diffusion barrier across the metal-metal interface is usually smaller than the thermal activation energy necessary for smooth surface morphologies. Here, we introduce epitaxial thin Co films grown on an Au(111) single crystal surface as a thermally stable ferromagnetic thin film. Our structural investigations reveal an identical growth of thin Co/Au(111) films compared to Co bulk single crystals with large monoatomic Co terraces with an average width of 500 Å, formed after thermal annealing at 575 K. Combining our results from photoemission and Auger electron spectroscopy, we provide evidence that no significant diffusion of Au into the near surface region of the Co film takes place for this temperature and that no Au capping layer is formed on top of Co films. Furthermore, we show that the electronic valence band is dominated by a strong spectral contribution from a Co 3d band and a Co derived surface resonance in the minority band. Both states lead to an overall negative spin polarization at the Fermi energy.

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

Increasing light coupling in a photovoltaic film by tuning nanoparticle shape with substrate surface energy

NASA Astrophysics Data System (ADS)

Kataria, Devika; Krishnamoorthy, Kothandam; Iyer, S. Sundar Kumar

2017-08-01

Tuning metal nanoparticle (MNP) contact angle on the surface it is formed can help maximise the useful optical coupling in photovoltaic films by localized surface plasmon (LSP) resonance—opening up the possibility of building improved photovoltaic cells. In this work experimental demonstration of optical absorption increase in copper phthalocyanine (CuPc) films by tuning silver MNP shape by changing its contact angles with substrate has been reported. Thin films of poly3,4 ethylenedioxythiophene: sodium dodecycl sulphate (PEDOT:SDS) with different surface energies were formed on indium tin oxide (ITO) coated glass by electro-deposition. Silver MNPs thermally evaporated directly on ozonised ITO as well as on the PEDOT:SDS films showed contact angles ranging from 60° to 125°. The CuPc layer was deposited on top of the MNPs. For the samples studied, best optical absorption in the CuPc layer was for a contact angle of 110°.

Selective nucleation of iron phthalocyanine crystals on micro-structured copper iodide.

PubMed

Rochford, Luke A; Ramadan, Alexandra J; Heutz, Sandrine; Jones, Tim S

2014-12-14

Morphological and structural control of organic semiconductors through structural templating is an efficient route by which to tune their physical properties. The preparation and characterisation of iron phthalocyanine (FePc)-copper iodide (CuI) bilayers at elevated substrate temperatures is presented. Thin CuI(111) layers are prepared which are composed of isolated islands rather than continuous films previously employed in device structures. Nucleation in the early stages of FePc growth is observed at the edges of islands rather than on the top (111) faces with the use of field emission scanning electron microscopy (FE-SEM). Structural measurements show two distinct polymorphs of FePc, with CuI islands edges nucleating high aspect ratio FePc crystallites with modified intermolecular spacing. By combining high substrate temperature growth and micro-structuring of the templating CuI(111) layer structural and morphological control of the organic film is demonstrated.

Online measurement of bead geometry in GMAW-based additive manufacturing using passive vision

NASA Astrophysics Data System (ADS)

Xiong, Jun; Zhang, Guangjun

2013-11-01

Additive manufacturing based on gas metal arc welding is an advanced technique for depositing fully dense components with low cost. Despite this fact, techniques to achieve accurate control and automation of the process have not yet been perfectly developed. The online measurement of the deposited bead geometry is a key problem for reliable control. In this work a passive vision-sensing system, comprising two cameras and composite filtering techniques, was proposed for real-time detection of the bead height and width through deposition of thin walls. The nozzle to the top surface distance was monitored for eliminating accumulated height errors during the multi-layer deposition process. Various image processing algorithms were applied and discussed for extracting feature parameters. A calibration procedure was presented for the monitoring system. Validation experiments confirmed the effectiveness of the online measurement system for bead geometry in layered additive manufacturing.

Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

DOEpatents

Richards, Von L.; Singhal, Subhash C.; Pal, Uday B.

1992-01-01

A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro.sub.3 particles; (2) dispersing doped LaCrO.sub.3 particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then electrochemical vapor depositing a dense skeletal LaCrO.sub.3 structure, between and around the doped LaCrO.sub.3 particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell.

Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

DOEpatents

Richards, V.L.; Singhal, S.C.; Pal, U.B.

1992-07-21

A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro[sub 3] particles; (2) dispersing doped LaCrO[sub 3] particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then a dense skeletal LaCrO[sub 3] structure is electrochemically vapor deposited between and around the doped LaCrO[sub 3] particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell. 4 figs.

A novel setup for wafer curvature measurement at very high heating rates.

PubMed

Islam, T; Zechner, J; Bernardoni, M; Nelhiebel, M; Pippan, R

2017-02-01

The curvature evolution of a thin film layer stack containing a top Al layer is measured during temperature cycles with very high heating rates. The temperature cycles are generated by means of programmable electrical power pulses applied to miniaturized polysilicon heater systems embedded inside a semiconductor chip and the curvature is measured by a fast wafer curvature measurement setup. Fast temperature cycles with heating duration of 100 ms are created to heat the specimen up to 270 °C providing an average heating rate of 2500 K/s. As a second approach, curvature measurement utilizing laser scanning Doppler vibrometry is also demonstrated which verifies the results obtained from the fast wafer curvature measurement setup. Film stresses calculated from the measured curvature values compare well to literature results, indicating that the new method can be used to measure curvature during fast temperature cycling.

Nano-immunoassay with improved performance for detection of cancer biomarkers

DOE PAGES

Krasnoslobodtsev, Alexey V.; Torres, Maria P.; Kaur, Sukhwinder; ...

2015-01-01

Nano-immunoassay utilizing surface-enhanced Raman scattering (SERS) effect is a promising analytical technique for the early detection of cancer. In its current standing the assay is capable of discriminating samples of healthy individuals from samples of pancreatic cancer patients. Further improvements in sensitivity and reproducibility will extend practical applications of the SERS-based detection platforms to wider range of problems. In this report, we discuss several strategies designed to improve performance of the SERS-based detection system. We demonstrate that reproducibility of the platform is enhanced by using atomically smooth mica surface as a template for preparation of capture surface in SERS sandwichmore » immunoassay. Furthermore, the assay's stability and sensitivity can be further improved by using either polymer or graphene monolayer as a thin protective layer applied on top of the assay addresses. The protective layer renders the signal to be more stable against photo-induced damage and carbonaceous contamination.« less

Gyrotactic trapping: A numerical study

NASA Astrophysics Data System (ADS)

Ghorai, S.

2016-04-01

Gyrotactic trapping is a mechanism proposed by Durham et al. ["Disruption of vertical motility by shear triggers formation of thin Phytoplankton layers," Science 323, 1067-1070 (2009)] to explain the formation of thin phytoplankton layer just below the ocean surface. This mechanism is examined numerically using a rational model based on the generalized Taylor dispersion theory. The crucial role of sedimentation speed in the thin layer formation is demonstrated. The effects of variation in different parameters on the thin layer formation are also investigated.

[High performance thin-layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

Furthering their research into the differentiation of various haemoglobins (both human and animal) with the use of thin layer chromatographic methods, the Authors have applied Kaiser's high performance thin layer chromatography (HPTLC) to the specific diagnosis of blood. Although the method was superior to ascending one-dimensional thin layer chromatography for its sensitivity, Rf reproducibility and much briefer migration times, it did not turn out to be suitable for application to the specific requirements of forensic haematology.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Low energy electron diffraction and low energy electron microscopy microspot I/V analysis of the (4 x 4)O structure on Ag(111): surface oxide or reconstruction?

PubMed

Reichelt, R; Günther, S; Wintterlin, J; Moritz, W; Aballe, L; Mentes, T O

2007-10-07

A low energy electron diffraction (LEED) I/V analysis was performed of the (4 x 4) oxygen structure on Ag(111). Two data sets were used, one recorded with a conventional LEED system and a second with a low energy electron microscope (LEEM). The data sets agree well with each other, demonstrating that I/V structure analyses can be performed with the same quality with LEEM as with conventional LEED. The structure obtained confirms the recently proposed model that involves a reconstruction of the Ag(111) surface. Previous models based on a thin layer of Ag(2)O that had been accepted for more than 30 years are disproved. The reconstruction model contains two units of six triangularly arranged Ag atoms and a stacking fault in one half of the unit cell. The six O atoms per unit cell occupy sites in the trenches between the Ag(6) triangles. Small lateral displacements of the Ag atoms lift the mirror symmetry of the structure, leading to two nonequivalent groups of O atoms. The atoms of both groups are located approximately 0.5 Angstrom below the top Ag layer, on fourfold positions with respect to the top layer Ag atoms. Ag-O distances between 2.05 and 2.3 Angstrom are found. The oxygen atoms exhibit large static or dynamic displacements of up to 0.3 Angstrom at 300 K.

Hybrid Dye-Sensitized Solar Cells Consisting of Double Titania Layers for Harvesting Light with Wide Range of Wavelengths

NASA Astrophysics Data System (ADS)

Sadamasu, Kengo; Inoue, Takafumi; Ogomi, Yuhei; Pandey, Shyam S.; Hayase, Shuzi

2011-02-01

We report a hybrid dye-sensitized solar cell consisting of double titania layers (top and bottom layers) stained with two dyes. A top layer fabricated on a glass was mechanically pressed with a bottom layer fabricated on a glass cloth. The glass cloth acts as a supporter of a porous titania layer as well as a holder of electrolyte. The incident photon to current efficiency (IPCE) curve had two peaks corresponding to those of the two dyes, which demonstrates that electrons are collected from both the top and bottom layers.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

A comparative study of the response of modeled non-drizzling stratocumulus to meteorological and aerosol perturbations

NASA Astrophysics Data System (ADS)

Petters, J. L.; Jiang, H.; Feingold, G.; Rossiter, D. L.; Khelif, D.; Sloan, L. C.; Chuang, P. Y.

2013-03-01

The impact of changes in aerosol and cloud droplet concentration (Na and Nd) on the radiative forcing of stratocumulus-topped boundary layers (STBLs) has been widely studied. How these impacts compare to those due to variations in meteorological context has not been investigated in a systematic fashion for non-drizzling overcast stratocumulus. In this study we examine the impact of observed variations in meteorological context and aerosol state on daytime, non-drizzling overcast stratiform evolution, and determine how resulting changes in cloud properties compare. Using large-eddy simulation (LES) we create a model base case of daytime southeast Pacific coastal stratocumulus, spanning a portion of the diurnal cycle (early morning to near noon) and constrained by observations taken during the VOCALS (VAMOS Ocean-Atmosphere-Land Study) field campaign. We perturb aerosol and meteorological properties around this base case to investigate the stratocumulus response. We determine perturbations in the cloud top jumps in potential temperature θ and total water mixing ratio qt from ECMWF Re-analysis Interim data, and use a set of Nd values spanning the observable range. To determine the cloud response to these meteorological and aerosol perturbations, we compute changes in liquid water path (LWP), bulk optical depth (τ) and cloud radiative forcing (CRF). We find that realistic variations in the thermodynamic jump properties can elicit a response in the cloud properties of τ and shortwave (SW) CRF that are on the same order of magnitude as the response found due to realistic changes in aerosol state (i.e Nd). In response to increases in Nd, the cloud layer in the base case thinned due to increases in evaporative cooling and entrainment rate. This cloud thinning somewhat mitigates the increase in τ resulting from increases in Nd. On the other hand, variations in θ and qt jumps did not substantially modify Nd. The cloud layer thickens in response to an increase in the θ jump and thins in response to an increase in the qt jump, both resulting in a τ and SW CRF response comparable to those found from perturbations in Nd. Longwave CRF was not substantially altered by the perturbations we tested. We find that realistic variations in meteorological context can elicit a response in CRF and τ on the same order of magnitude as, and at times larger than, that response found due to realistic changes in aerosol state. We estimate the limits on variability of cloud top jump properties required for accurate observation of aerosol SW radiative impacts on stratocumulus, and find strict constraints: less than 1 K and 1 g kg-1 in the early morning hours, and order 0.1 K and 0.1 g kg-1 close to solar noon. These constraints suggest that accurately observing aerosol radiative impacts in stratocumulus may be challenging as co-variation of meteorological properties may obfuscate aerosol-cloud interactions.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors.

PubMed

Mainz, Roland; Walker, Bryce C; Schmidt, Sebastian S; Zander, Ole; Weber, Alfons; Rodriguez-Alvarez, Humberto; Just, Justus; Klaus, Manuela; Agrawal, Rakesh; Unold, Thomas

2013-11-07

The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ energy-dispersive X-ray diffraction and fluorescence analysis as well as by ex situ electron microscopy. The precursor films are heated in a closed volume inside a vacuum chamber in the presence of selenium vapor while diffraction and fluorescence signals are recorded. The presented results reveal that during the selenization the cations diffuse to the surface to form large grains on top of the nanoparticle layer and the selenization of the film takes place through two simultaneous reactions: (1) a direct and fast formation of large grained selenides, starting with copper selenide which is subsequently transformed into Cu2ZnSnSe4; and (2) a slower selenization of the remaining nanoparticles. As a consequence of the initial formation of copper selenides at the surface, the subsequent formation of CZTSe starts under Cu-rich conditions despite an overall Cu-poor composition of the film. The implications of this process path for the film quality are discussed. Additionally, the proposed growth model provides an explanation for the previously observed accumulation of carbon from the nanoparticle precursor beneath the large grained layer.

First-Principles Study of the Self-Assembled Pentacene Molecules on Metal Surfaces

NASA Astrophysics Data System (ADS)

Lee, Kyuho; Han, Myung-Joon; Yu, Jaejun

2003-03-01

Oriented thin films of organic semiconducting small molecules have received considerable attention as active semiconductors for device applications such as Schottky diodes and thin-film transistors (TFTs). Among these organic materials, pentacene has been found to have the highest mobilities for hole transport. Understanding the formation of self-organized ad-layers of pentacene would contribute to the fabrication of nanostructures and possibly highly oriented pentacene layers by epitaxy for use in electronic devices. To understand the ordering patterns of pentacene ad-layers on metal surfaces, we investigated the energetics between pentacene molecules with and without metal substrates and analyzed its electronic structure. We used a self-consistent first-principles calculation method based on the density functional theory (DFT) within local density approximation (LDA). The localized pseudo-atomic orbitals (PAO) are employed for a real-space numerical basis set, which was suggested by Sankey and Niklewski, and the Troullier-Martins-type pseudo-potential is used. As results, we found that the ordering patterns can be explained by the energetics between pentacene molecules, and the metal substrates appears not to influence too much on the interaction between pentacenes. To investigate the nature of the self-assembled structure, we calculated the total energies of various configurations for the molecule pattern, e.g., side-by-side and head-to-head ordering or on-top stacking. Depending on its direction, extremely different interaction character between two pentacenes is found and explained by its electronic structure analysis.

Metal-assisted exfoliation (MAE): green process for transferring graphene to flexible substrates and templating of sub-nanometer plasmonic gaps (Presentation Recording)

NASA Astrophysics Data System (ADS)

Zaretski, Aliaksandr V.; Marin, Brandon C.; Moetazedi, Herad; Dill, Tyler J.; Jibril, Liban; Kong, Casey; Tao, Andrea R.; Lipomi, Darren J.

2015-09-01

This paper describes a new technique, termed "metal-assisted exfoliation," for the scalable transfer of graphene from catalytic copper foils to flexible polymeric supports. The process is amenable to roll-to-roll manufacturing, and the copper substrate can be recycled. We then demonstrate the use of single-layer graphene as a template for the formation of sub-nanometer plasmonic gaps using a scalable fabrication process called "nanoskiving." These gaps are formed between parallel gold nanowires in a process that first produces three-layer thin films with the architecture gold/single-layer graphene/gold, and then sections the composite films with an ultramicrotome. The structures produced can be treated as two gold nanowires separated along their entire lengths by an atomically thin graphene nanoribbon. Oxygen plasma etches the sandwiched graphene to a finite depth; this action produces a sub-nanometer gap near the top surface of the junction between the wires that is capable of supporting highly confined optical fields. The confinement of light is confirmed by surface-enhanced Raman spectroscopy measurements, which indicate that the enhancement of the electric field arises from the junction between the gold nanowires. These experiments demonstrate nanoskiving as a unique and easy-to-implement fabrication technique that is capable of forming sub-nanometer plasmonic gaps between parallel metallic nanostructures over long, macroscopic distances. These structures could be valuable for fundamental investigations as well as applications in plasmonics and molecular electronics.

Self-organized morphological evolution and dewetting in solvent vapor annealing of spin coated polymer blend nanostructures.

PubMed

Roy, Sudeshna; Sharma, Ashutosh

2015-07-01

Dewetting pathways, kinetics and morphologies of thin films of phase separating polymer blends are governed by the relative mobilities of the two components. We characterize the morphological transformations of the nanostructures of a PS/PMMA blend by annealing in toluene and chloroform vapors. Toluene leads to faster reorganization of PS, whereas chloroform engenders the opposite effect. Spin coating produces a very rough PMMA rich layer that completely wets the substrate and forms a plethora of slender columns protruding through the continuous PS rich layer on top. The nanostructures were stable under long thermal annealing but in the vapor annealing, phase separation and dewetting occurred readily to form the equilibrium structures of dewetted droplets of PS on top of PMMA which also climbed around the PS droplets to form rims. Toluene and chloroform annealing required around 50 h and 1 h respectively to attain the equilibrium. Substantial differences are observed in the intermediate morphologies (heights of nanostructures, roughness and size). PMMA columns remained embedded in the dewetted PS droplets, whereas a high mobility of PMMA in chloroform allowed its rapid evacuation during dewetting to produce an intermediate swiss-cheese like morphology of PS domains. Copyright © 2015 Elsevier Inc. All rights reserved.

Metal-Insulator-Metal-Based Plasmonic Metamaterial Absorbers at Visible and Infrared Wavelengths: A Review.

PubMed

Ogawa, Shinpei; Kimata, Masafumi

2018-03-20

Electromagnetic wave absorbers have been investigated for many years with the aim of achieving high absorbance and tunability of both the absorption wavelength and the operation mode by geometrical control, small and thin absorber volume, and simple fabrication. There is particular interest in metal-insulator-metal-based plasmonic metamaterial absorbers (MIM-PMAs) due to their complete fulfillment of these demands. MIM-PMAs consist of top periodic micropatches, a middle dielectric layer, and a bottom reflector layer to generate strong localized surface plasmon resonance at absorption wavelengths. In particular, in the visible and infrared (IR) wavelength regions, a wide range of applications is expected, such as solar cells, refractive index sensors, optical camouflage, cloaking, optical switches, color pixels, thermal IR sensors, IR microscopy and gas sensing. The promising properties of MIM-PMAs are attributed to the simple plasmonic resonance localized at the top micropatch resonators formed by the MIMs. Here, various types of MIM-PMAs are reviewed in terms of their historical background, basic physics, operation mode design, and future challenges to clarify their underlying basic design principles and introduce various applications. The principles presented in this review paper can be applied to other wavelength regions such as the ultraviolet, terahertz, and microwave regions.

Metal-Insulator-Metal-Based Plasmonic Metamaterial Absorbers at Visible and Infrared Wavelengths: A Review

PubMed Central

Ogawa, Shinpei; Kimata, Masafumi

2018-01-01

Electromagnetic wave absorbers have been investigated for many years with the aim of achieving high absorbance and tunability of both the absorption wavelength and the operation mode by geometrical control, small and thin absorber volume, and simple fabrication. There is particular interest in metal-insulator-metal-based plasmonic metamaterial absorbers (MIM-PMAs) due to their complete fulfillment of these demands. MIM-PMAs consist of top periodic micropatches, a middle dielectric layer, and a bottom reflector layer to generate strong localized surface plasmon resonance at absorption wavelengths. In particular, in the visible and infrared (IR) wavelength regions, a wide range of applications is expected, such as solar cells, refractive index sensors, optical camouflage, cloaking, optical switches, color pixels, thermal IR sensors, IR microscopy and gas sensing. The promising properties of MIM-PMAs are attributed to the simple plasmonic resonance localized at the top micropatch resonators formed by the MIMs. Here, various types of MIM-PMAs are reviewed in terms of their historical background, basic physics, operation mode design, and future challenges to clarify their underlying basic design principles and introduce various applications. The principles presented in this review paper can be applied to other wavelength regions such as the ultraviolet, terahertz, and microwave regions. PMID:29558454

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.