Bound-Electron Nonlinearity Beyond the Ionization Threshold.

PubMed

Wahlstrand, J K; Zahedpour, S; Bahl, A; Kolesik, M; Milchberg, H M

2018-05-04

We present absolute space- and time-resolved measurements of the ultrafast laser-driven nonlinear polarizability in argon, krypton, xenon, nitrogen, and oxygen up to ionization fractions of a few percent. These measurements enable determination of the strongly nonperturbative bound-electron nonlinear polarizability well beyond the ionization threshold, where it is found to remain approximately quadratic in the laser field, a result normally expected at much lower intensities where perturbation theory applies.

Bound-Electron Nonlinearity Beyond the Ionization Threshold

NASA Astrophysics Data System (ADS)

Wahlstrand, J. K.; Zahedpour, S.; Bahl, A.; Kolesik, M.; Milchberg, H. M.

2018-05-01

We present absolute space- and time-resolved measurements of the ultrafast laser-driven nonlinear polarizability in argon, krypton, xenon, nitrogen, and oxygen up to ionization fractions of a few percent. These measurements enable determination of the strongly nonperturbative bound-electron nonlinear polarizability well beyond the ionization threshold, where it is found to remain approximately quadratic in the laser field, a result normally expected at much lower intensities where perturbation theory applies.

Article surveillance magnetic marker having an hysteresis loop with large Barkhausen discontinuities

DOEpatents

Humphrey, Floyd B.

1987-01-01

A marker for an electronic article surveillance system is disclosed comprising a body of magnetic material with retained stress and having a magnetic hysteresis loop with a large Barkhausen discontinuity such that, upon exposure of the marker to an external magnetic field whose field strength in the direction opposing the instantaneous magnetic polarization of the marker exceeds a predetermined threshold value, there results a regenerative reversal of the magnetic polarization of the marker. An electronic article surveillance system and a method utilizing the marker are also disclosed. Exciting the marker with a low frequency and low field strength, so long as the field strength exceeds the low threshold level for the marker, causes a regenerative reversal of magnetic polarity generating a harmonically rich pulse that is readily detected and easily distinguished.

Correlation of CVD Diamond Electron Emission with Film Properties

NASA Astrophysics Data System (ADS)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

The inception of pulsed discharges in air: simulations in background fields above and below breakdown

NASA Astrophysics Data System (ADS)

Sun, Anbang; Teunissen, Jannis; Ebert, Ute

2014-11-01

We investigate discharge inception in air, in uniform background electric fields above and below the breakdown threshold. We perform 3D particle simulations that include a natural level of background ionization in the form of positive and \\text{O}2- ions. In background fields below breakdown, we use a strongly ionized seed of electrons and positive ions to enhance the field locally. In the region of enhanced field, we observe the growth of positive streamers, as in previous simulations with 2D plasma fluid models. The inclusion of background ionization has little effect in this case. When the background field is above the breakdown threshold, the situation is very different. Electrons can then detach from \\text{O}2- and start ionization avalanches in the whole volume. These avalanches together create one extended discharge, in contrast to the ‘double-headed’ streamers found in many fluid simulations.

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Runaway electron behavior in the Frascati Tokamak Upgrade (FTU)

NASA Astrophysics Data System (ADS)

Popovic, Zana; Martin-Solis, Jose Ramon; Esposito, Basilio; Marocco, Daniele; Causa, Federica; Buratti, Paolo; Boncagni, Luca; Carnevale, Daniele; Gospodarczyk, Mateusz

2016-10-01

Several recent experiments in the FTU tokamak are dedicated to the study of runaway electrons (RE), both in the flattop and disruption phases of the discharge. Experiments have been carried out to evaluate the threshold electric field for RE generation during the flattop of ohmic discharges. The measured threshold electric field during RE electron generation and suppression experiments for a wide range of plasma parameters is found to be 2-5 times larger than predicted by the relativistic collisional theory, ER = nee3ln Λ/4 πɛ02 mec2, and is consistent with an increase of the critical field due to the RE synchrotron radiation. Runaway evolution has been numerically simulated using a test particle model including toroidal electric field acceleration, collisions and synchrotron radiation losses. Estimates of RE energy distribution are consistent with the measurements of two recently installed RE diagnostics: HXR-camera and RE Imaging and Spectroscopy (REIS) system. Supported by MINECO (Spain), Projects ENE2012-31753.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

High-order above-threshold photoemission from nanotips controlled with two-color laser fields

NASA Astrophysics Data System (ADS)

Seiffert, Lennart; Paschen, Timo; Hommelhoff, Peter; Fennel, Thomas

2018-07-01

We investigate the process of phase-controlled high-order above-threshold photoemission from metallic nanotips under bichromatic laser fields. Experimental photoelectron spectra resulting from two-color excitation with a moderately intense near-infrared fundamental field (1560 nm) and its weak second harmonic show a strong sensitivity on the relative phase and clear indications for a plateau-like structure that is attributed to elastic backscattering. To explore the relevant control mechanisms, characteristic features, and particular signatures from the near-field inhomogeneity, we performed systematic quantum simulations employing a one-dimensional nanotip model. Besides rich phase-dependent structures in the simulated above-threshold ionization photoelectron spectra we find ponderomotive shifts as well as substantial modifications of the rescattering cutoff as function of the decay length of the near-field. To explore the quantum or classical nature of the observed features and to discriminate the two-color effects stemming from electron propagation and from the ionization rate we compare the quantum results to classical trajectory simulations. We show that signatures from direct electrons as well as the modulations in the plateau region mainly stem from control of the ionization probability, while the modulation in the cutoff region can only be explained by the impact of the two-color field on the electron trajectory. Despite the complexity of the phase-dependent features that render two-color strong-field photoemission from nanotips intriguing for sub-cycle strong-field control, our findings support that the recollision features in the cutoff region provide a robust and reliable method to calibrate the relative two-color phase.

Quantum control via a genetic algorithm of the field ionization pathway of a Rydberg electron

NASA Astrophysics Data System (ADS)

Gregoric, Vincent C.; Kang, Xinyue; Liu, Zhimin Cheryl; Rowley, Zoe A.; Carroll, Thomas J.; Noel, Michael W.

2017-08-01

Quantum control of the pathway along which a Rydberg electron field ionizes is experimentally and computationally demonstrated. Selective field ionization is typically done with a slowly rising electric field pulse. The (1/n*)4 scaling of the classical ionization threshold leads to a rough mapping between arrival time of the electron signal and principal quantum number of the Rydberg electron. This is complicated by the many avoided level crossings that the electron must traverse on the way to ionization, which in general leads to broadening of the time-resolved field ionization signal. In order to control the ionization pathway, thus directing the signal to the desired arrival time, a perturbing electric field produced by an arbitrary wave-form generator is added to a slowly rising electric field. A genetic algorithm evolves the perturbing field in an effort to achieve the target time-resolved field ionization signal.

Pedestal bifurcation and resonant field penetration at the threshold of edge-localized mode suppression in the DIII-D Tokamak.

PubMed

Nazikian, R; Paz-Soldan, C; Callen, J D; deGrassie, J S; Eldon, D; Evans, T E; Ferraro, N M; Grierson, B A; Groebner, R J; Haskey, S R; Hegna, C C; King, J D; Logan, N C; McKee, G R; Moyer, R A; Okabayashi, M; Orlov, D M; Osborne, T H; Park, J-K; Rhodes, T L; Shafer, M W; Snyder, P B; Solomon, W M; Strait, E J; Wade, M R

2015-03-13

Rapid bifurcations in the plasma response to slowly varying n=2 magnetic fields are observed as the plasma transitions into and out of edge-localized mode (ELM) suppression. The rapid transition to ELM suppression is characterized by an increase in the toroidal rotation and a reduction in the electron pressure gradient at the top of the pedestal that reduces the perpendicular electron flow there to near zero. These events occur simultaneously with an increase in the inner-wall magnetic response. These observations are consistent with strong resonant field penetration of n=2 fields at the onset of ELM suppression, based on extended MHD simulations using measured plasma profiles. Spontaneous transitions into (and out of) ELM suppression with a static applied n=2 field indicate competing mechanisms of screening and penetration of resonant fields near threshold conditions. Magnetic measurements reveal evidence for the unlocking and rotation of tearinglike structures as the plasma transitions out of ELM suppression.

Pedestal Bifurcation and Resonant Field Penetration at the Threshold of Edge-Localized Mode Suppression in the DIII-D Tokamak

DOE PAGES

Nazikian, Raffi; Paz-Soldan, Carlos; Callen, James D.; ...

2015-03-12

Rapid bifurcations in the plasma response to slowly varying n=2 magnetic fields are observed as the plasma transitions into and out of edge localized mode (ELM) suppression. The rapid transition to ELM suppression is characterized by an increase in the toroidal rotation and a reduction in the electron pressure gradient at the top of the pedestal which reduces the perpendicular electron flow to near zero. These events occur simultaneously with an increase in the inner wall magnetic response. These observations are consistent strong resonant field penetration of n=2 fields at the onset of ELM suppression, based on extended MHD simulationsmore » using measured plasma profiles. Spontaneous transitions into (and out of) ELM suppression with a static applied n=2 field indicate competing mechanisms of screening and penetration of resonant fields near threshold conditions. Magnetic measurements reveal evidence for the unlocking and rotation of tearing-like structures as the plasma transitions out of ELM suppression.« less

Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Hayama, K.; Ohyama, H.; Simoen, E.; Rafí, J. M.; Mercha, A.; Claeys, C.

2004-04-01

The degradation of the electrical properties of deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) by 2 MeV electron irradiation at high temperatures was studied. The irradiation temperatures were 30, 100, 150 and 200 °C, and the fluence was fixed at 1015e/cm2. For most experimental conditions, the threshold voltage (VT) is observed to reduce in absolute value both for n- and p-MOSFETs. This reduction is most pronounced at 100 °C, as at this irradiation temperature, the radiation-induced density of interface traps is highest. It is proposed that hydrogen neutralization of the dopants in the substrate plays a key role, whereby the hydrogen is released from the gate by the 2 MeV electrons.

Effect of Electron Seeding on Experimentally Measured Multipactor Discharge Threshold

NASA Astrophysics Data System (ADS)

Noland, Jonathan; Graves, Timothy; Lemon, Colby; Looper, Mark; Farkas, Alex

2012-10-01

Multipactor is a vacuum phenomenon in which electrons, moving in resonance with an externally applied electric field, impact material surfaces. If the number of secondary electrons created per primary electron impact averages more than unity, the resonant interaction can lead to an electron avalanche. Multipactor is a generally undesirable phenomenon, as it can cause local heating, absorb power, or cause detuning of RF circuits. In order to increase the probability of multipactor initiation, test facilities often employ various seeding sources such as radioactive sources (Cesium 137, Strontium 90), electron guns, or photon sources. Even with these sources, the voltage for multipactor initiation is not certain as parameters such as material type, RF pulse length, and device wall thickness can all affect seed electron flux and energy in critical gap regions, and hence the measured voltage threshold. This study investigates the effects of seed electron source type (e.g., photons versus beta particles), material type, gap size, and RF pulse length variation on multipactor threshold. In addition to the experimental work, GEANT4 simulations will be used to estimate the production rate of low energy electrons (< 5 keV) by high energy electrons and photons. A comparison of the experimental fluxes to the typical energetic photon and particle fluxes experienced by spacecraft in various orbits will also be made. Initial results indicate that for a simple, parallel plate device made of aluminum, there is no threshold variation (with seed electrons versus with no seed electrons) under continuous-wave RF exposure.

Transition from order to chaos, and density limit, in magnetized plasmas.

PubMed

Carati, A; Zuin, M; Maiocchi, A; Marino, M; Martines, E; Galgani, L

2012-09-01

It is known that a plasma in a magnetic field, conceived microscopically as a system of point charges, can exist in a magnetized state, and thus remain confined, inasmuch as it is in an ordered state of motion, with the charged particles performing gyrational motions transverse to the field. Here, we give an estimate of a threshold, beyond which transverse motions become chaotic, the electrons being unable to perform even one gyration, so that a breakdown should occur, with complete loss of confinement. The estimate is obtained by the methods of perturbation theory, taking as perturbing force acting on each electron that due to the so-called microfield, i.e., the electric field produced by all the other charges. We first obtain a general relation for the threshold, which involves the fluctuations of the microfield. Then, taking for such fluctuations, the formula given by Iglesias, Lebowitz, and MacGowan for the model of a one component plasma with neutralizing background, we obtain a definite formula for the threshold, which corresponds to a density limit increasing as the square of the imposed magnetic field. Such a theoretical density limit is found to fit pretty well the empirical data for collapses of fusion machines.

Ponderomotive electron acceleration in a silicon-based nanoplasmonic waveguide.

PubMed

Sederberg, S; Elezzabi, A Y

2014-10-17

Ponderomotive electron acceleration is demonstrated in a semiconductor-loaded nanoplasmonic waveguide. Photogenerated free carriers are accelerated by the tightly confined nanoplasmonic fields and reach energies exceeding the threshold for impact ionization. Broadband (375 nm ≤ λ ≤ 650  nm) white light emission is observed from the nanoplasmonic waveguides. Exponential growth of visible light emission confirms the exponential growth of the electron population, demonstrating the presence of an optical-field-driven electron avalanche. Electron sweeping dynamics are visualized using pump-probe measurements, and a sweeping time of 1.98 ± 0.40 ps is measured. These findings offer a means to harness the potential of the emerging field of ultrafast nonlinear nanoplasmonics.

Detection of short-term changes in vegetation cover by use of LANDSAT imagery. [Arizona

NASA Technical Reports Server (NTRS)

Turner, R. M. (Principal Investigator); Wiseman, F. M.

1975-01-01

The author has identified the following significant results. By using a constant band 6 to band 5 radiance ratio of 1.25, the changing pattern of areas of relatively dense vegetation cover was detected for the semiarid region in the vicinity of Tucson, Arizona. Electronically produced binary thematic masks were used to map areas with dense vegetation. The foliar cover threshold represented by the ratio was not accurately determined but field measurements show that the threshold lies in the range of 10 to 25 percent foliage cover. Montana evergreen forests with constant dense cover were correctly shown to exceed the threshold on all dates. The summer active grassland exceeded the threshold in the summer unless rainfall was insufficient. Desert areas exceeded the threshold during the spring of 1973 following heavy rains; the same areas during the rainless spring of 1974 did not exceed threshold. Irrigated fields, parks, golf courses, and riparian communities were among the habitats most frequently surpassing the threshold.

Direct electronic probing of biological complexes formation

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Magliulo, Maria; Manoli, Kyriaki; Giordano, Francesco; Palazzo, Gerardo; Torsi, Luisa

2014-10-01

Functional bio-interlayer organic field - effect transistors (FBI-OFET), embedding streptavidin, avidin and neutravidin as bio-recognition element, have been studied to probe the electronic properties of protein complexes. The threshold voltage control has been achieved modifying the SiO2 gate diaelectric surface by means of the deposition of an interlayer of bio-recognition elements. A threshold voltage shift with respect to the unmodified dielectric surface toward more negative potential values has been found for the three different proteins, in agreement with their isoelectric points. The relative responses in terms of source - drain current, mobility and threshold voltage upon exposure to biotin of the FBI-OFET devices have been compared for the three bio-recognition elements.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Interference-threshold storage of optical data

NASA Astrophysics Data System (ADS)

Efimkov, V. F.; Zubarev, I. G.; Kolobrodov, V. V.; Sobolev, V. B.

1989-08-01

A method for the determination of the spatial characteristics of a laser beam is proposed and implemented. This method is based on the interaction of an interference field of two laser beams, which are spatially similar to the one being investigated, with a light-sensitive material characterized by a sensitivity threshold.

Electron rescattering in above-threshold photodetachment of negative ions.

PubMed

Gazibegović-Busuladzić, A; Milosević, D B; Becker, W; Bergues, B; Hultgren, H; Kiyan, I Yu

2010-03-12

We present experimental and theoretical results on photodetachment of Br(-) and F(-) in a strong infrared laser field. The observed photoelectron spectra of Br(-) exhibit a high-energy plateau along the laser polarization direction, which is identified as being due to the rescattering effect. The shape and the extension of the plateau is found to be influenced by the depletion of negative ions during the interaction with the laser pulse. Our findings represent the first observation of electron rescattering in above-threshold photodetachment of an atomic system with a short-range potential.

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

PubMed

Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

2017-11-08

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

Laser damage of free-standing nanometer membranes

NASA Astrophysics Data System (ADS)

Morimoto, Yuya; Roland, Iännis; Rennesson, Stéphanie; Semond, Fabrice; Boucaud, Philippe; Baum, Peter

2017-12-01

Many high-field/attosecond and ultrafast electron diffraction/microscopy experiments on condensed matter require samples in the form of free-standing membranes with nanometer thickness. Here, we report the measurement of the laser-induced damage threshold of 11 different free-standing nanometer-thin membranes of metallic, semiconducting, and insulating materials for 1-ps, 1030-nm laser pulses at 50 kHz repetition rate. We find a laser damage threshold that is very similar to each corresponding bulk material. The measurements also reveal a band gap dependence of the damage threshold as a consequence of different ionization rates. These results establish the suitability of free-standing nanometer membranes for high-field pump-probe experiments.

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

FIBER AND INTEGRATED OPTICS. OTHER TOPICS IN QUANTUM ELECTRONICS: Monokinetization of atomic beams by the method of laser photodetachment of electrons

NASA Astrophysics Data System (ADS)

Rivlin, Lev A.

1990-05-01

A method is suggested for the generation of atomic beams with a high degree of monokinetization from beams of negative ions accelerated in an electric field up to a threshold moment at which, subject to the Doppler effect, the longitudinal component of the ion velocity becomes sufficient for the photodetachment of an electron from an ion by photons in a laser beam collinear with the ion beam. The resultant neutral atoms continue to move without acceleration and at the same longitudinal velocities equal to the threshold value. An analysis of a number of factors limiting this effect is given below.

Investigation of ionospheric stimulated Brillouin scatter generated at pump frequencies near electron gyroharmonics

NASA Astrophysics Data System (ADS)

Mahmoudian, A.; Scales, W. A.; Bernhardt, P. A.; Fu, H.; Briczinski, S. J.; McCarrick, M. J.

2013-11-01

Stimulated Electromagnetic Emissions (SEEs), secondary electromagnetic waves excited by high power electromagnetic waves transmitted into the ionosphere, produced by the Magnetized Stimulated Brillouin Scatter (MSBS) process are investigated. Data from four recent research campaigns at the High Frequency Active Auroral Research Program (HAARP) facility is presented in this work. These experiments have provided additional quantitative interpretation of the SEE spectrum produced by MSBS to yield diagnostic measurements of the electron temperature and ion composition in the heated ionosphere. SEE spectral emission lines corresponding to ion acoustic (IA) and electrostatic ion cyclotron (EIC) mode excitation were observed with a shift in frequency up to a few tens of Hz from the pump frequency for heating near the third harmonic of the electron gyrofrequency 3fce. The threshold of each emission line has been measured by changing the pump wave power. The excitation threshold of IA and EIC emission lines originating at the reflection and upper hybrid altitudes is measured for various beam angles relative to the magnetic field. Variation of strength of MSBS emission lines with pump frequency relative to 3fce and 4fce is also studied. A full wave solution has been used to estimate the amplitude of the electric field at the interaction altitude. The estimated instability threshold using the theoretical model is compared with the threshold of MSBS lines in the experiment and possible diagnostic information for the background ionospheric plasma is discussed. Simultaneous formation of artificial field-aligned irregularities (FAIs) and suppression of the MSBS process is investigated. This technique can be used to estimate the growth time of artificial FAIs which may result in determination of plasma waves and physical process involved in the formation of FAIs.

Considerable knock-on displacement of metal atoms under a low energy electron beam.

PubMed

Gu, Hengfei; Li, Geping; Liu, Chengze; Yuan, Fusen; Han, Fuzhou; Zhang, Lifeng; Wu, Songquan

2017-03-15

Under electron beam irradiation, knock-on atomic displacement is commonly thought to occur only when the incident electron energy is above the incident-energy threshold of the material in question. However, we report that when exposed to intense electrons at room temperature at a low incident energy of 30 keV, which is far below the theoretically predicted incident-energy threshold of zirconium, Zircaloy-4 (Zr-1.50Sn-0.25Fe-0.15Cr (wt.%)) surfaces can undergo considerable displacement damage. We demonstrate that electron beam irradiation of the bulk Zircaloy-4 surface resulted in a striking radiation effect that nanoscale precipitates within the surface layer gradually emerged and became clearly visible with increasing the irradiation time. Our transmission electron microscope (TEM) observations further reveal that electron beam irradiation of the thin-film Zircaly-4 surface caused the sputtering of surface α-Zr atoms, the nanoscale atomic restructuring in the α-Zr matrix, and the amorphization of precipitates. These results are the first direct evidences suggesting that displacement of metal atoms can be induced by a low incident electron energy below threshold. The presented way to irradiate may be extended to other materials aiming at producing appealing properties for applications in fields of nanotechnology, surface technology, and others.

Manipulating ion-atom collisions with coherent electromagnetic radiation.

PubMed

Kirchner, Tom

2002-08-26

Laser-assisted ion-atom collisions are considered in terms of a nonperturbative quantum mechanical description of the electronic motion. It is shown for the system He(2+) - H at 2 keV/amu that the collision dynamics depend strongly on the initial phase of the laser field and the applied wavelength. Whereas electronic transitions are caused by the concurrent action of the field and the projectile ion at relatively low frequencies, they can be separated into modified collisional capture and field ionization events in the region above the one-photon ionization threshold.

Enhanced field emission from hexagonal rhodium nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathe, Bhaskar R.; Kakade, Bhalchandra A.; Mulla, Imtiaz S.

2008-06-23

Shape selective synthesis of nanostructured Rh hexagons has been demonstrated with the help of a modified chemical vapor deposition using rhodium acetate. An ultralow threshold field of 0.72 V/{mu}m is observed to generate a field emission current density of 4x10{sup -3} {mu}A/cm{sup 2}. The high enhancement factor (9325) indicates that the origin of electron emission is from nanostructured features. The smaller size of emitting area, excellent current density, and stability over a period of more than 3 h are promising characteristics for the development of electron sources.

A magnetic-bottle multi-electron-ion coincidence spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsuda, Akitaka; Hishikawa, Akiyoshi; Department of Chemistry, Nagoya University, Furo-cho, Chikusa, Nagoya, Aichi 464-8602

2011-10-15

A novel multi-electron-ion coincidence spectrometer developed on the basis of a 1.5 m-long magnetic-bottle electron spectrometer is presented. Electrons are guided by an inhomogeneous magnetic field to a detector at the end of the flight tube, while a set of optics is used to extract counterpart ions to the same detector, by a pulsed inhomogeneous electric field. This setup allows ion detection with high mass resolution, without impairing the high collection efficiency for electrons. The performance of the coincidence spectrometer was tested with double ionization of carbon disulfide, CS{sub 2} {yields} CS{sub 2}{sup 2+} + e{sup -} + e{sup -},more » in ultrashort intense laser fields (2.8 x 10{sup 13} W/cm{sup 2}, 280 fs, 1030 nm) to clarify the electron correlation below the rescattering threshold.« less

Radiation effects on electronic parts

NASA Technical Reports Server (NTRS)

Johnson, W. S.

1971-01-01

A search of literature concerning the long term effects of nuclear radiation on electronic parts was conducted to determine the effects of radiation fields encountered on deep space missions to parts used in the Pioneer Spacecraft. Topics discussed include: the various types of radiation the spacecraft will encounter, effects of radiation on electronic parts, and estimates of the damage thresholds for transistors and integrated circuits used on the Pioneer Spacecraft.

Calculation of femtosecond pulse laser induced damage threshold for broadband antireflective microstructure arrays.

PubMed

Jing, Xufeng; Shao, Jianda; Zhang, Junchao; Jin, Yunxia; He, Hongbo; Fan, Zhengxiu

2009-12-21

In order to more exactly predict femtosecond pulse laser induced damage threshold, an accurate theoretical model taking into account photoionization, avalanche ionization and decay of electrons is proposed by comparing respectively several combined ionization models with the published experimental measurements. In addition, the transmittance property and the near-field distribution of the 'moth eye' broadband antireflective microstructure directly patterned into the substrate material as a function of the surface structure period and groove depth are performed by a rigorous Fourier model method. It is found that the near-field distribution is strongly dependent on the periodicity of surface structure for TE polarization, but for TM wave it is insensitive to the period. What's more, the femtosecond pulse laser damage threshold of the surface microstructure on the pulse duration taking into account the local maximum electric field enhancement was calculated using the proposed relatively accurate theoretical ionization model. For the longer incident wavelength of 1064 nm, the weak linear damage threshold on the pulse duration is shown, but there is a surprising oscillation peak of breakdown threshold as a function of the pulse duration for the shorter incident wavelength of 532 nm.

A theoretical approach to study the optical sensitivity of a MESFET

NASA Astrophysics Data System (ADS)

Dutta, Sutanu

2018-05-01

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect transistor has been proposed for a relatively high drain field. An analytical expression of drain current of the device has been derived for a MESFET under optical illumination considering field dependent mobility of electrons across the channel. The variation of drain current with and without optical illumination has been studied with drain and gate voltages. The optical sensitivity of the drain current has been studied for different biasing conditions and gate lengths. In addition, the shift in threshold voltage of a MESFET under optical illumination is determined and optical sensitivity of the device in terms of its threshold voltage has been studied.

First-principles simulation for strong and ultra-short laser pulse propagation in dielectrics

NASA Astrophysics Data System (ADS)

Yabana, K.

2016-05-01

We develop a computational approach for interaction between strong laser pulse and dielectrics based on time-dependent density functional theory (TDDFT). In this approach, a key ingredient is a solver to simulate electron dynamics in a unit cell of solids under a time-varying electric field that is a time-dependent extension of the static band calculation. This calculation can be regarded as a constitutive relation, providing macroscopic electric current for a given electric field applied to the medium. Combining the solver with Maxwell equations for electromagnetic fields of the laser pulse, we describe propagation of laser pulses in dielectrics without any empirical parameters. An important output from the coupled Maxwell+TDDFT simulation is the energy transfer from the laser pulse to electrons in the medium. We have found an abrupt increase of the energy transfer at certain laser intensity close to damage threshold. We also estimate damage threshold by comparing the transferred energy with melting and cohesive energies. It shows reasonable agreement with measurements.

Influence of e-e+ creation on the radiative trapping in ultraintense fields of colliding laser pulses

NASA Astrophysics Data System (ADS)

Baumann, C.; Pukhov, A.

2016-12-01

The behavior of a thin plasma target irradiated by two counterpropagating laser pulses of ultrahigh intensity is studied in the framework of one- and two-dimensional particle-in-cell simulations. It is found that above an intensity threshold, radiative trapping can focus electrons in the peaks of the electromagnetic field. At even higher intensities, the trapping effect cannot be maintained according to the increasing influence of electron-positron pair production on the laser-plasma dynamics.

Structural and electronic properties of copper-doped chalcogenide glasses

NASA Astrophysics Data System (ADS)

Guzman, David M.; Strachan, Alejandro

2017-10-01

Using ab initio molecular dynamics based on density functional theory, we study the atomic and electronic structure, and transport properties of copper-doped germanium-based chalcogenide glasses. These mixed ionic-electronic conductor materials exhibit resistance or threshold switching under external electric field depending on slight variations of chemical composition. Understanding the origin of the transport character is essential for the functionalization of glassy chalcogenides for nanoelectronics applications. To this end, we generated atomic structures for GeX3 and GeX6 (X = S, Se, Te) at different copper concentrations and characterized the atomic origin of electronic states responsible for transport and the tendency of copper clustering as a function of metal concentration. Our results show that copper dissolution energies explain the tendency of copper to agglomerate in telluride glasses, consistent with filamentary conduction. In contrast, copper is less prone to cluster in sulfides and selenides leading to hysteresisless threshold switching where the nature of transport is dominated by electronic midgap defects derived from polar chalcogen bonds and copper atoms. Simulated I -V curves show that at least 35% by weight of copper is required to achieve the current demands of threshold-based devices for memory applications.

Terahertz radiation-induced sub-cycle field electron emission across a split-gap dipole antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jingdi; Averitt, Richard D., E-mail: xinz@bu.edu, E-mail: raveritt@ucsd.edu; Department of Physics, Boston University, Boston, Massachusetts 02215

We use intense terahertz pulses to excite the resonant mode (0.6 THz) of a micro-fabricated dipole antenna with a vacuum gap. The dipole antenna structure enhances the peak amplitude of the in-gap THz electric field by a factor of ∼170. Above an in-gap E-field threshold amplitude of ∼10 MV/cm{sup −1}, THz-induced field electron emission is observed as indicated by the field-induced electric current across the dipole antenna gap. Field emission occurs within a fraction of the driving THz period. Our analysis of the current (I) and incident electric field (E) is in agreement with a Millikan-Lauritsen analysis where log (I) exhibits amore » linear dependence on 1/E. Numerical estimates indicate that the electrons are accelerated to a value of approximately one tenth of the speed of light.« less

Generation Process of Large-Amplitude Upper-Band Chorus Emissions Observed by Van Allen Probes

DOE PAGES

Kubota, Yuko; Omura, Yoshiharu; Kletzing, Craig; ...

2018-04-19

In this paper, we analyze large-amplitude upper-band chorus emissions measured near the magnetic equator by the Electric and Magnetic Field Instrument Suite and Integrated Science instrument package on board the Van Allen Probes. In setting up the parameters of source electrons exciting the emissions based on theoretical analyses and observational results measured by the Helium Oxygen Proton Electron instrument, we calculate threshold and optimum amplitudes with the nonlinear wave growth theory. We find that the optimum amplitude is larger than the threshold amplitude obtained in the frequency range of the chorus emissions and that the wave amplitudes grow between themore » threshold and optimum amplitudes. Finally, in the frame of the wave growth process, the nonlinear growth rates are much greater than the linear growth rates.« less

Generation Process of Large-Amplitude Upper-Band Chorus Emissions Observed by Van Allen Probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kubota, Yuko; Omura, Yoshiharu; Kletzing, Craig

In this paper, we analyze large-amplitude upper-band chorus emissions measured near the magnetic equator by the Electric and Magnetic Field Instrument Suite and Integrated Science instrument package on board the Van Allen Probes. In setting up the parameters of source electrons exciting the emissions based on theoretical analyses and observational results measured by the Helium Oxygen Proton Electron instrument, we calculate threshold and optimum amplitudes with the nonlinear wave growth theory. We find that the optimum amplitude is larger than the threshold amplitude obtained in the frequency range of the chorus emissions and that the wave amplitudes grow between themore » threshold and optimum amplitudes. Finally, in the frame of the wave growth process, the nonlinear growth rates are much greater than the linear growth rates.« less

Secondary electron emission from a dielectric film subjected to an electric field. M.S. Thesis

NASA Technical Reports Server (NTRS)

Quoc-Nguyen, N.

1977-01-01

An electric field in the range of 0.3,3.3 kV/mm is created normal to a thin film FEP teflon sample which accumulates potential of up to 8.8, 13.7 or 18.3 kV when exposed to an electron beam having energy of 10.0, 15.0 or 20.0 kV, respectively. It is found that the secondary electron emission from the charged sample varies with field. The threshold voltage, at which the secondary electron emission coefficient sigma is unity, drops down from a low field value of 13.73 kV to a high field value of 13.11 kV for a 15.0 kV beam. A computational technique was developed that generates equipotential lines or contours and field vectors above a plane where potential is known. The utilization of conformal transformations allows the extension of the technique to configurations which map into a plane.

Photo-Double Ionization: Threshold Law and Low-Energy Behavior

NASA Technical Reports Server (NTRS)

Bhatia, A. K.; Temkin, A.

2007-01-01

The threshold law for photoejection of two electrons from atoms (PDI) is derived from a modification of the Coulomb-dipole (C-D) theory. The C-D theory applies to two-electron ejection from negative ions (photo-double detachment:PDD). The modification consists of correctly accounting for the fact that in PDI that the two escaping electrons see a Coulomb field, asymptotically no matter what their relative distances from the residual ion are. We find in the contralinear spherically symmetric model that the analytic threshold law Q(E), i.e. the yield of residual ions, to be Q Integral of (E) varies as E + (C(sub w) E(sup gamma W)) +CE(sup 5/4) sin [1/2 ln E + phi]/ln(E). The first and third terms are beyond the Wannier law. Our threshold law can only be rigorously justified for residual energies <= 10(exp -3) eV. Nevertheless in the present experimental range (0.1 - 4 eV), the form, even without the second term, can be fitted to experimental results of PDI for He, Li, and Be, in contrast to the Wannier law which has a larger deviation from the data for Li and Be.

Nanoscale electron manipulation in metals with intense THz electric fields

NASA Astrophysics Data System (ADS)

Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

2018-03-01

Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

PubMed

Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

2013-04-01

To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

The Martian Dust Devil Electron Avalanche: Laboratory Measurements of the E-Field Fortifying Effects of Dust-Electron Absorption

NASA Technical Reports Server (NTRS)

Farrell, W. M.; McLain, J. L.; Collier, M. R.; Keller, J. W.

2017-01-01

Analogous to terrestrial dust devils, charged dust in Mars dust devils should become vertically stratified in the convective features, creating large scale E-fields. This E-field in a Martian-like atmosphere has been shown to stimulate the development of a Townsend discharge (electron avalanche) that acts to dissipate charge in regions where charge build-up occurs. While the stratification of the charged dust is a source of the electrical energy, the uncharged particulates in the dust population may absorb a portion of these avalanching electrons, thereby inhibiting dissipation and leading to the development of anomalously large E-field values. We performed a laboratory study that does indeed show the presence of enhanced E-field strengths between an anode and cathode when dust-absorbing filaments (acting as particulates) are placed in the avalanching electron flow. Further, the E-field threshold condition to create an impulsive spark discharge increases to larger values as more filaments are placed between the anode and cathode. We conclude that the spatially separated charged dust creates the charge centers and E-fields in a dust devil, but the under-charged portion of the population acts to reduce Townsend electron dissipation currents, further fortifying the development of larger-than-expected E-fields.

Laser-assisted bremsstrahlung and electron-positron pair creation in relativistic laser fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loetstedt, Erik

2009-07-25

An electron submitted to a relativistically strong laser field emits Compton harmonics at frequencies satisfying the nonlinear Compton formula. We investigate the scenario when in addition to the laser field, also a nuclear Coulomb field is present to accelerate the electron. In this case we may speak about laser-assisted bremsstrahlung, with radiation resulting from the combined effect of the Coulomb and laser field. The theoretical method employed is fully relativistic quantum electrodynamics, where in particular the laser-dressed Dirac-Volkov propagator requires proper treatment. Electron-positron pair creation is a physical process related to bremsstrahlung by a crossing symmetry of quantum electrodynamics. Wemore » consider pair creation in the combined fields of a laser, a nucleus and a high-frequency photon. We show that the total number of created pairs is not affected by the laser, provided the energy of the high-energy photon exceeds the pair creation threshold, but that the differential cross section is strongly enhanced in a particular direction, making a small angle with the laser beam. The physical picture is that the electron-positron pair is created by the high-energy photon, and subsequently accelerated by the laser field.« less

L to H mode transition: Parametric dependencies of the temperature threshold

DOE PAGES

Bourdelle, C.; Chone, L.; Fedorczak, N.; ...

2015-06-15

The L to H mode transition occurs at a critical power which depends on various parameters, such as the magnetic field, the density, etc. Experimental evidence on various tokamaks (JET, ASDEX-Upgrade, DIII-D, Alcator C-Mod) points towards the existence of a critical temperature characterizing the transition. This criterion for the L-H transition is local and is therefore easier to be compared to theoretical approaches. In order to shed light on the mechanisms of the transition, simple theoretical ideas are used to derive a temperature threshold (T th). They are based on the stabilization of the underlying turbulence by a mean radialmore » electric field shear. The nature of the turbulence varies as the collisionality decreases, from resistive ballooning modes to ion temperature gradient and trapped electron modes. The obtained parametric dependencies of the derived T th are tested versus magnetic field, density, effective charge. Furthermore, various robust experimental observations are reproduced, in particular T th increases with magnetic field B and increases with density below the density roll-over observed on the power threshold.« less

High-order-harmonic generation from Rydberg atoms driven by plasmon-enhanced laser fields

NASA Astrophysics Data System (ADS)

Tikman, Y.; Yavuz, I.; Ciappina, M. F.; Chacón, A.; Altun, Z.; Lewenstein, M.

2016-02-01

We theoretically investigate high-order-harmonic generation (HHG) in Rydberg atoms driven by spatially inhomogeneous laser fields, induced, for instance, by plasmonic enhancement. It is well known that the laser intensity should exceed a certain threshold in order to stimulate HHG when noble gas atoms in their ground state are used as an active medium. One way to enhance the coherent light coming from a conventional laser oscillator is to take advantage of the amplification obtained by the so-called surface plasmon polaritons, created when a low-intensity laser field is focused onto a metallic nanostructure. The main limitation of this scheme is the low damage threshold of the materials employed in the nanostructure engineering. In this work we propose the use of Rydberg atoms, driven by spatially inhomogeneous, plasmon-enhanced laser fields, for HHG. We exhaustively discuss the behavior and efficiency of these systems in the generation of coherent harmonic emission. Toward this aim we numerically solve the time-dependent Schrödinger equation for an atom, with an electron initially in a highly excited n th Rydberg state, located in the vicinity of a metallic nanostructure. In this zone the electric field changes spatially on scales relevant for the dynamics of the laser-ionized electron. We first use a one-dimensional model to investigate systematically the phenomena. We then employ a more realistic situation, in which the interaction of a plasmon-enhanced laser field with a three-dimensional hydrogen atom is modeled. We discuss the scaling of the relevant input parameters with the principal quantum number n of the Rydberg state in question and demonstrate that harmonic emission can be achieved from Rydberg atoms well below the damage threshold, thus without deterioration of the geometry and properties of the metallic nanostructure.

Emptying Dirac valleys in bismuth using high magnetic fields

DOE PAGES

Zhu, Zengwei; Wang, Jinhua; Zuo, Huakun; ...

2017-05-19

The Fermi surface of elemental bismuth consists of three small rotationally equivalent electron pockets, offering a valley degree of freedom to charge carriers. A relatively small magnetic field can confine electrons to their lowest Landau level. This is the quantum limit attained in other dilute metals upon application of sufficiently strong magnetic field. Here in this paper we report on the observation of another threshold magnetic field never encountered before in any other solid. Above this field, B empty, one or two valleys become totally empty. Drying up a Fermi sea by magnetic field in the Brillouin zone leads tomore » a manyfold enhancement in electric conductance. We trace the origin of the large drop in magnetoresistance across B empty to transfer of carriers between valleys with highly anisotropic mobilities. The non-interacting picture of electrons with field-dependent mobility explains most results but the Coulomb interaction may play a role in shaping the fine details.« less

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Photo-Double Ionization: Threshold Law and Low-Energy Behavior

NASA Technical Reports Server (NTRS)

Bhatia, Anand

2008-01-01

The threshold law for photoejection of two electrons from atoms (PDI) is derived from a modification of the Coulomb-dipole (C-D) theory. The C-D theory applies to two-electron ejection from negative ions (photo-double detachment:PDD). The modification consists of correctly accounting for the fact that in PDI that the two escaping electrons see a Coulomb field, asymptotically no matter what their relative distances from the residual ion are. We find in the contralinear spherically symmetric model that the analytic threshold law Q(E),i. e. the yield of residual ions, to be Qf(E)approaches E + CwE(sup gamma(w)) + CE(sup 5/4)sin[1/2 ln(E + theta)]/ln(E). The first and third terms are beyond the Wannier law. Our threshold law can only be rigorously justified for residual energies less than or equal to 10(exp -3) eV. Nevertheless in the present experimental range (0.1 - 4 eV), the form, even without the second term, can be fitted to experimental results of PDI for He, Li, and Be, in contrast to the Wannier law which has a larger deviation from the data for Li and Be, for both of which the data show signs of modulation.

Long-range Coulomb effect in above-threshold ionization of Ne subject to few-cycle and multicycle laser fields

NASA Astrophysics Data System (ADS)

Xu, SongPo; Quan, Wei; Chen, YongJu; Xiao, ZhiLei; Wang, YanLan; Kang, HuiPeng; Hua, LinQiang; Gong, Cheng; Lai, XuanYang; Liu, XiaoJun; Hao, XiaoLei; Hu, ShiLin; Chen, Jing

2017-06-01

The long-range Coulomb effect (LRCE) is demonstrated experimentally and theoretically by investigating the pulse duration dependence of low-energy structure (LES) in above-threshold ionization of Ne. It is found experimentally that at 800 nm the LES shows itself as a double-hump structure (DHS) in momentum distribution of singly charged ion for Ne, and moreover, this structure is more prominent for multicycle laser fields than for few-cycle cases. This result can be reproduced and explained qualitatively with a semiclassical model and attributed to the paramount role of LRCE. That is to say, after the laser field vanishes, the electrons decelerate while flying away from the core by the long-range tail of Coulomb potential, which eventually makes DHS less notable.

Fluence thresholds for grazing incidence hard x-ray mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aquila, A.; Ozkan, C.; Sinn, H.

2015-06-15

X-ray Free Electron Lasers (XFELs) have the potential to contribute to many fields of science and to enable many new avenues of research, in large part due to their orders of magnitude higher peak brilliance than existing and future synchrotrons. To best exploit this peak brilliance, these XFEL beams need to be focused to appropriate spot sizes. However, the survivability of X-ray optical components in these intense, femtosecond radiation conditions is not guaranteed. As mirror optics are routinely used at XFEL facilities, a physical understanding of the interaction between intense X-ray pulses and grazing incidence X-ray optics is desirable. Wemore » conducted single shot damage threshold fluence measurements on grazing incidence X-ray optics, with coatings of ruthenium and boron carbide, at the SPring-8 Angstrom compact free electron laser facility using 7 and 12 keV photon energies. The damage threshold dose limits were found to be orders of magnitude higher than would naively be expected. The incorporation of energy transport and dissipation via keV level energetic photoelectrons accounts for the observed damage threshold.« less

[A Generator of Mono-energetic Electrons for Response Test of Charged Particle Detectors.].

PubMed

Matsubayashi, Fumiyasu; Yoshida, Katsuhide; Maruyama, Koichi

2005-01-01

We designed and fabricated a generator of mono-energetic electrons for the response test of charged particle detectors, which is used to measure fragmented particles of the carbon beam for cancer therapy. Mono-energetic electrons are extracted from (90)Sr by analyzing the energy of beta rays in the generator with a magnetic field. We evaluated performance parameters of the generator such as the absolute energy, the energy resolution and the counting rates of extracted electrons. The generator supplies mono-energetic electrons from 0.5MeV to 1.7MeV with the energy resolution of 20% in FWHM at higher energies than 1.0MeV. The counting rate of electrons is 400cpm at the maximum when the activity of (90)Sr is 298kBq. The generator was used to measure responses of fragmented-particle detectors and to determine the threshold energy of the detectors. We evaluated the dependence of pulse height variation on the detector position and the threshold energy by using the generator. We concluded this generator is useful for the response test of general charged particle detectors.

Spatiotemporal Evolution of Runaway Electron Momentum Distributions in Tokamaks

DOE PAGES

Paz-Soldan, Carlos; Cooper, Christopher M.; Aleynikov, Pavel; ...

2017-06-22

Novel spatial, temporal, and energetically resolved measurements of bremsstrahlung hard-x-ray (HXR) emission from runaway electron (RE) populations in tokamaks reveal nonmonotonic RE distribution functions whose properties depend on the interplay of electric field acceleration with collisional and synchrotron damping. Measurements are consistent with theoretical predictions of momentum-space attractors that accumulate runaway electrons. RE distribution functions are measured to shift to a higher energy when the synchrotron force is reduced by decreasing the toroidal magnetic field strength. Increasing the collisional damping by increasing the electron density (at a fixed magnetic and electric field) reduces the energy of the nonmonotonic feature andmore » reduces the HXR growth rate at all energies. Higher-energy HXR growth rates extrapolate to zero at the expected threshold electric field for RE sustainment, while low-energy REs are anomalously lost. The compilation ofHXR emission from different sight lines into the plasma yields energy and pitch-angle-resolved RE distributions and demonstrates increasing pitch-angle and radial gradients with energy.« less

Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

NASA Astrophysics Data System (ADS)

Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

2018-03-01

The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

PubMed Central

2013-01-01

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

Dose-rate-dependent damage of cerium dioxide in the scanning transmission electron microscope.

PubMed

Johnston-Peck, Aaron C; DuChene, Joseph S; Roberts, Alan D; Wei, Wei David; Herzing, Andrew A

2016-11-01

Beam damage caused by energetic electrons in the transmission electron microscope is a fundamental constraint limiting the collection of artifact-free information. Through understanding the influence of the electron beam, experimental routines may be adjusted to improve the data collection process. Investigations of CeO 2 indicate that there is not a critical dose required for the accumulation of electron beam damage. Instead, measurements using annular dark field scanning transmission electron microscopy and electron energy loss spectroscopy demonstrate that the onset of measurable damage occurs when a critical dose rate is exceeded. The mechanism behind this phenomenon is that oxygen vacancies created by exposure to a 300keV electron beam are actively annihilated as the sample re-oxidizes in the microscope environment. As a result, only when the rate of vacancy creation exceeds the recovery rate will beam damage begin to accumulate. This observation suggests that dose-intensive experiments can be accomplished without disrupting the native structure of the sample when executed using dose rates below the appropriate threshold. Furthermore, the presence of an encapsulating carbonaceous layer inhibits processes that cause beam damage, markedly increasing the dose rate threshold for the accumulation of damage. Published by Elsevier B.V.

Dose-rate-dependent damage of cerium dioxide in the scanning transmission electron microscope

PubMed Central

Johnston-Peck, Aaron C.; DuChene, Joseph S.; Roberts, Alan D.; Wei, Wei David; Herzing, Andrew A.

2016-01-01

Beam damage caused by energetic electrons in the transmission electron microscope is a fundamental constraint limiting the collection of artifact-free information. Through understanding the influence of the electron beam, experimental routines may be adjusted to improve the data collection process. Investigations of CeO2 indicate that there is not a critical dose required for the accumulation of electron beam damage. Instead, measurements using annular dark field scanning transmission electron microscopy and electron energy loss spectroscopy demonstrate that the onset of measurable damage occurs when a critical dose rate is exceeded. The mechanism behind this phenomenon is that oxygen vacancies created by exposure to a 300 keV electron beam are actively annihilated as the sample re-oxidizes in the microscope environment. As a result, only when the rate of vacancy creation exceeds the recovery rate will beam damage begin to accumulate. This observation suggests that dose-intensive experiments can be accomplished without disrupting the native structure of the sample when executed using dose rates below the appropriate threshold. Furthermore, the presence of an encapsulating carbonaceous layer inhibits processes that cause beam damage, markedly increasing the dose rate threshold for the accumulation of damage. PMID:27469265

Field-Induced Disorder and Carrier Localization in Molecular Organic Transistors

NASA Astrophysics Data System (ADS)

Ando, M.; Minakata, T.; Duffy, C.; Sirringhaus, H.

2009-06-01

We propose a "field-induced polymorphous disorder" model to explain bias-stress instability in molecular organic thin-film transistors, based on the experimental results showing the strong correlation between the micro-structural change in semiconductor layer composed of penrtacene molecules and the threshold voltage (Vth) shift due to electron trapping in a reversible manner under the successive bias-stress, thermal annealing, and light irradiation.

Experimental study of two-dimensional quantum Wigner solid in zero magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jian; Pfeiffer, L. N.; West, K. W.

2014-03-31

At temperatures T → 0, strongly interacting two-dimensional (2D) electron systems manifest characteristic insulating behaviors that are key for understanding the nature of the ground state in light of the interplay between disorder and electron-electron interaction. In contrast to the hopping conductance demonstrated in the insulating side of the metal-to-insulator transition, the ultra-high quality 2D systems exhibit nonactivated T-dependence of the conductivity even for dilute carrier concentrations down to 7×10{sup 8} cm{sup −2}. The apparent metal-to-insulator transition (MIT) occurs for a large r{sub s} value around 40 for which a Wigner Crystalllization is expected. The magnetoresistance for a series ofmore » carrier densities in the vicinity of the transition exhibits a characteristic sign change in weak perpendicular magnetic field. Within the Wigner Crystallization regime (with r{sub s} > 40), we report an experimental observation of a characteristic nonlinear threshold behavior from a high-resolution dc dynamical response as an evidence for aWigner crystallization in high-purity GaAs 2D hole systems in zero magnetic field. The system under an increasing current drive exhibits voltage oscillations with negative differential resistance. They confirm the coexistence of a moving crystal along with striped edge states as observed for electrons on helium surfaces. Moreover, the threshold is well below the typical classical levels due to a different pinning and depinning mechanism that is possibly related to quantum processes.« less

Modeling and Numerical Simulation of Microwave Pulse Propagation in Air Breakdown Environment

NASA Technical Reports Server (NTRS)

Kuo, S. P.; Kim, J.

1991-01-01

Numerical simulation is used to investigate the extent of the electron density at a distant altitude location which can be generated by a high-power ground-transmitted microwave pulse. This is done by varying the power, width, shape, and carrier frequency of the pulse. The results show that once the breakdown threshold field is exceeded in the region below the desired altitude location, electron density starts to build up in that region through cascading breakdown. The generated plasma attenuates the pulse energy (tail erosion) and thus deteriorates the energy transmission to the destined altitude. The electron density saturates at a level limited by the pulse width and the tail erosion process. As the pulse continues to travel upward, though the breakdown threshold field of the background air decreases, the pulse energy (width) is reduced more severely by the tail erosion process. Thus, the electron density grows more quickly at the higher altitude, but saturates at a lower level. Consequently, the maximum electron density produced by a single pulse at 50 km altitude, for instance, is limited to a value below 10(exp 6) cm(exp -3). Three different approaches are examined to determine if the ionization at the destined location can be improved: a repetitive pulse approach, a focused pulse approach, and two intersecting beams. Only the intersecting beam approach is found to be practical for generating the desired density level.

Response to ``Comment on `Scalings for radiation from plasma bubbles' '' [Phys. Plasmas 18, 034701 (2011)

NASA Astrophysics Data System (ADS)

Thomas, A. G. R.

2011-03-01

In the preceding Comment, Corde, Stordeur, and Malka claim that the trapping threshold derived in my recent paper is incorrect. Their principal argument is that the elliptical orbits I used are not exact solutions of the equation of motion in the fields of the bubble. The original paper never claimed this—rather I claimed that the use of elliptical orbits was a reasonable approximation, which I based on observations from particle-in-cell simulations. Integration of the equation of motion for analytical expressions for idealized bubble fields (either analytically [I. Kostyukov, E. Nerush, A. Pukhov, and V. Seredov, Phys. Rev. Lett. 103, 175003 (2009)] or numerically [S. Corde, A. Stordeur, and V. Malka, "Comment on `Scalings for radiation from plasma bubbles,' " Phys. Plasmas 18, 034701 (2011)]) produces a trapping threshold wholly inconsistent with experiments and full particle-in-cell (PIC) simulations (e.g., requiring an estimated laser intensity of a0˜30 for ne˜1019 cm-3). The inconsistency in the particle trajectories between PIC and the numeric model used by the comment authors arises due to the fact that the analytical fields are only approximately true for "real" plasma bubbles, and lack certain key features of the field structure. Two possible methods of resolution to this inconsistency are either to find ever more complicated but accurate models for the bubble fields or to find approximate solutions to the equations of motion that capture the essential features of the self-consistent electron trajectories. The latter, heuristic approach used in my recent paper produced a threshold that is better matched to experimental observations. In this reply, I will also revisit the problem and examine the relationship between bubble radius and electron momentum at the point of trapping without reference to a particular trajectory.

Influence of polymer dielectrics on C60-based field-effect transistors

NASA Astrophysics Data System (ADS)

Zhou, Jianlin; Zhang, Fujia; Lan, Lifeng; Wen, Shangsheng; Peng, Junbiao

2007-12-01

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of C60 film and small number of traps at the interface of PMMA /C60 were obtained with high electron mobility of 0.66cm2/Vs in the PMMA transistor. The result suggests that the C60 semiconductor cooperating with polymer dielectric is a promising application in the fabrication of n-type organic transistors because of low threshold voltage and high electron mobility.

Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping

NASA Astrophysics Data System (ADS)

Asano, Takanori; Takaishi, Riichiro; Oda, Minoru; Sakuma, Kiwamu; Saitoh, Masumi; Tanaka, Hiroki

2018-04-01

We visualize the grain structures for individual nanosized thin film transistors (TFTs), which are electrically characterized, with an improved data processing technique for the dark-field image reconstruction of nanobeam electron diffraction maps. Our individual crystal analysis gives the one-to-one correspondence of TFTs with different grain boundary structures, such as random and coherent boundaries, to the characteristic degradations of ON-current and threshold voltage. Furthermore, the local crystalline uniformity inside a single grain is detected as the difference in diffraction intensity distribution.

The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

NASA Astrophysics Data System (ADS)

Yafarov, R. K.

2017-12-01

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.

Electron pairing without superconductivity

NASA Astrophysics Data System (ADS)

Levy, Jeremy

Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances--paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity. Support from AFOSR, ONR, ARO, NSF, DOE and NSSEFF is gratefully acknowledged.

Thermal Electron Contributions to Current-Driven Instabilities: SCIFER Observations in the 1400-km Cleft Ion Fountain and Their Implications to Thermal Ion Energization

NASA Technical Reports Server (NTRS)

Adrian, Mark L.; Pollock, C. J.; Moore, T. E.; Kintner, P. M.; Arnoldy, R. L.; Whitaker, Ann F. (Technical Monitor)

2001-01-01

SCIFER TECHS observations of the variations in the thermal electron distribution in the 1400-km altitude cleft are associated with periods of intense ion heating and field-aligned currents. Energization of the thermal ion plasma in the mid-altitude cleft occurs within density cavities accompanied by enhanced thermal electron temperatures, large field-aligned thermal electron plasma flows and broadband low-frequency electric fields. Variations in the thermal electron contribution to field-aligned current densities indicate small scale (approximately 100's m) filamentary structure embedded within the ion energization periods. TECHS observations of the field-aligned drift velocities and temperatures of the thermal electron distribution are presented to evaluate the critical velocity thresholds necessary for the generation of electrostatic ion cyclotron and ion acoustic instabilities. This analysis suggests that, during periods of thermal ion energization, sufficient drift exists in the thermal electron distribution to excite the electrostatic ion cyclotron instability. In addition, brief periods exist within the same interval where the drift of the thermal electron distribution is sufficient to marginally excite the ion acoustic instability. In addition, the presence an enhancement in Langmuir emission at the plasma frequency at the center of the ion energization region, accompanied by the emission's second-harmonic, and collocated with observations of high-frequency electric field solitary structures suggest the presence of electron beam driven decay of Langmuir waves to ion acoustic modes as an additional free energy source for ion energization.

High performance printed oxide field-effect transistors processed using photonic curing.

PubMed

Garlapati, Suresh Kumar; Marques, Gabriel Cadilha; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Tahoori, Mehdi Baradaran; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-08

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In 2 O 3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

High performance printed oxide field-effect transistors processed using photonic curing

NASA Astrophysics Data System (ADS)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Application of the dressed-bound-state molecular strong-field approximation to above-threshold ionization of heteronuclear molecules: NO vs. CO.

PubMed

Busuladžić, M; Hasović, E; Becker, W; Milošević, D B

2012-10-07

We theoretically investigate high-order above-threshold ionization (HATI) of heteronuclear diatomic molecules applying the molecular strong-field approximation which includes dressing of the molecular bound state. We consider HATI of nitrogen monoxide molecules, which are characterized by the π symmetry of their highest occupied molecular orbital. We show that the HATI spectra of NO exhibit characteristic interference structures. We analyze the differences and similarities of the HATI spectra of NO molecules and the spectra of CO (σ symmetry) and O(2) (π(g) symmetry) molecules. The symmetry properties of the molecular HATI spectra governed by linearly and elliptically polarized fields are considered in detail. The yields of high-energy electrons, contributing to the plateau region of the photoelectron spectra, strongly depend on the employed ellipticity.

[Electromagnetic fields of mobile telephone systems--thresholds, effects and risks for cochlear implant patients and healthy people].

PubMed

Bischof, F; Langer, J; Begall, K

2008-11-01

Every day life is detectably affected by manifold natural sources of electromagnetic fields (EMF), e. g. infrared radiation, light and the terrestrial magnetic field. However, there is still uncertainty about the consequences or hazards of artificial EMF, which emerge from mobile phone or wireless network (wireless local area network [WLAN]) services, for instance. Following recommendations of the International Commission on Non-Ionizing Radiation Protection (ICNIRP) the German Commission on Radiation Protection (SSK) defined corresponding thresholds for high frequency electromagnetic fields (HF-EMF) in 2003. By observing those thresholds HF-EMF is thought to be innocent so far. However, there is still controversial discussion about induction of cancer or neurovegetative symptoms due to inconsistent study results. Patients with cochlea implants are of particular interest within the speciality of otorhinolaryngology due to specific hazards, which arise during mobile telephone use from the distance between brain and inductive metal implants (electrode) on the one hand and the electronic system of the cochlear implant and the source of HF-EMF on the other hand. Besides many studies about the impact of HF-EMF on common welfare, there are only very few surveys (n = 6) covering the effects on patients with cochlear implants. The purpose of this paper is to overview sources, thresholds and subsequently harmful or harmless effects of HFEMF. Due to the current state of knowledge about the impact of mobile phone use on health, we assume, that HF-EMF are harmless both for healthy people and patients with cochlea implants, provided that legal thresholds are observed.

Evolutionary sheath structure in magnetized collisionless plasma with electron inertia

NASA Astrophysics Data System (ADS)

Gohain, M.; Karmakar, P. K.

2017-09-01

A classical hydrodynamic model is methodologically formulated to see the equilibrium properties of a planar plasma sheath in two-component magnetized bounded plasma. It incorporates the weak but finite electron inertia instead of asymptotically inertialess electrons. The effects of the externally applied oblique (relative to the bulk plasma flow) magnetic field are judiciously accented. It is, for the sake of simplicity, assumed that the relevant physical parameters (plasma density, electrostatic potential, and flow velocity) vary only in a direction normal to the confining wall boundary. It is noticed for the first time that the derived Bohm condition for sheath formation is modified conjointly by the electron inertia, magnetic field, and field orientation. It is manifested that the electron inertia in the presence of plasma gyrokinetic effects slightly enhances the ion Mach threshold value (typically, M i0 ≥ 1.139) toward the sheath entrance. This flow supercriticality is in contrast with the heuristic formalism ( M i0 ≥ 1) for the zero-inertia electrons. A numerical illustrative scheme on the parametric sheath features on diverse nontrivial apposite arguments is constructed alongside ameliorative scope.

Optical bistability and multistability via double dark resonance in graphene nanostructure

NASA Astrophysics Data System (ADS)

Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

2016-06-01

Electrons in graphene nanoribbons can lead to exceptionally strong optical responses in the infrared and terahertz regions owing to their unusual dispersion relation. Therefore, on the basis of quantum optics and solid-material scientific principles, we show that optical bistability and multistability can be generated in graphene nanostructure under strong magnetic field. We also show that by adjusting the intensity and detuning of infrared laser field, the threshold intensity and hysteresis loop can be manipulated efficiently. The effects of the electronic cooperation parameter which are directly proportional to the electronic number density and the length of the graphene sample are discussed. Our proposed model may be useful for the nextgeneration all-optical systems and information processing based on nano scale devices.

The temporal evolution of 3-m striations in the modified ionosphere

NASA Technical Reports Server (NTRS)

Coster, A. J.; Djuth, F. T.; Jost, R. J.; Gordon, W. E.

1985-01-01

Experiments were performed at Arecibo, Puerto Rico, to investigate the evolution times of 3-m field-aligned striations produced in the ionosphere by powerful high-frequency (HF) radio waves. The results of this investigation are now summarized. First, the striations' rise times are dependent on the HF electric field. The E region data suggest that this dependence is nonlinear. Second, the threshold value of the HF electric field required to produce detectable striations was experimentally determined. At threshold the component of the HF electric field perpendicular to the geomagnetic field is calculated to be 0.09 V/m in the F region and 0.37 V/m in the E region. Third, both the E and the F region data verify theoretical predictions that the striations' decay times are directly proportional to the electron diffusion across B. Finally, a one-to-one correspondence between the growth of the 3-m striations and the decline of the HF-enhanced plasma line during overshoot is sometimes observed.

Field emission properties and strong localization effect in conduction mechanism of nanostructured perovskite LaNiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamble, Ramesh B., E-mail: rbk.physics@coep.ac.in; Department of Physics, College of Engineering, Pune 411005, Maharashtra; Tanty, Narendra

2016-08-22

We report the potential field emission of highly conducting metallic perovskite lanthanum nickelate (LaNiO{sub 3}) from the nanostructured pyramidal and whisker shaped tips as electron emitters. Nano particles of lanthanum nickelate (LNO) were prepared by sol-gel route. Structural and morphological studies have been carried out. Field emission of LNO exhibited high emission current density, J = 3.37 mA/cm{sup 2} at a low threshold electric field, E{sub th} = 16.91 V/μm, obeying Fowler–Nordheim tunneling. The DC electrical resistivity exhibited upturn at 11.6 K indicating localization of electron at low temperature. Magnetoresistance measurement at different temperatures confirmed strong localization in nanostructured LNO obeying Anderson localization effect at low temperature.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Giriraj, E-mail: grsharma@gmail.com; Dad, R. C.; Ghosh, S.

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantlymore » raised and the threshold pump field for the onset of SBS process is lowered.« less

Electronic quantization in dielectric nanolaminates

NASA Astrophysics Data System (ADS)

Willemsen, T.; Geerke, P.; Jupé, M.; Gallais, L.; Ristau, D.

2016-12-01

The scientific background in the field of the laser induced damage processes in optical coatings has been significantly extended during the last decades. Especially for the ultra-short pulse regime a clear correlation between the electronic material parameters and the laser damage threshold could be demonstrated. In the present study, the quantization in nanolaminates is investigated to gain a deeper insight into the behavior of the blue shift of the bandgap in specific coating materials as well as to find approximations for the effective mass of the electrons. The theoretical predictions are correlated to the measurements.

Research on Vacuum Laser Accelerator and Proof-of Principle Experiment

NASA Astrophysics Data System (ADS)

Shao, Lei

This thesis discovers a proof-of-principle theory of Vacuum Laser Acceleration (VLA) and proposes a new acceleration mechanism---Capture and Acceleration Scenario (CAS) in our far-field laser acceleration research, which is a promising new scheme in advanced acceleration field. In this thesis, I studied electrons' dynamic behaviors while interacting with intense laser beam. There are two kinds of dynamics trajectories, namely IS (Inelastic Scattering) and CAS. In CAS, electrons can be captured and moving along the laser beam for a long time and receive considerable energy exchange from the laser field, rather than quickly expelled from the intense field region of the laser as predicted by the conventional Ponderomotive Potential Model (PPM). This thesis shows the research on most parameters of both laser beam and electron beam which will affect this VLA scheme. One of the primary factors is the laser intensity. Relatively high laser intensity is critically required for VLA, and there are thresholds of intensity a0( th) for CAS occurrence; the thresholds are different under different laser beam waist widths which is also a very important parameter of laser beam. Laser intensity is still a big obstacle nowadays. In the last decade there are only a few laboratories have the laser power to ˜1019 W/cm2 and above. Our simulation shows that laser intensity threshold of CAS is around a0 = 5˜8, in correspondence to laser power around 1019˜1022 W/cm 2 depending on different wave length and waist width. The interaction is also sensitive to various electron beam parameters, such as the optimal initial electron energy falls in the range of 4--15 MeV, electron incident angle and position, and so on. At last the thesis presents out experimental work on this new VLA scheme. The collaboration is between our UCLA group and Brookhaven National Lab - Accelerator Test Facility (BNL-ATF). At BNL-ATF, they have both intense laser beam and high quality electron beam. The characters of BNL-ATF fit our project very well. The laser system at ATF is a short pulse CO2 laser. Under present ATF condition, the peak power of the CO2 laser is around 5J with pulse duration 5ps. Therefore the maximum laser intensity can reach a 0 ≈ 1.0. Such level of laser intensity is not sufficient to perform violent electron acceleration-CAS according to the threshold we defined. However this level intensity is already high enough to see basic proof-of-principle signal based on our extensive simulations with exact practical ATF experimental conditions. Another important factor is the electron beam condition. ATF uses photoinjector Radio Frequency (RF) gun system for electron beam. The working frequency is at constant level 2856MHz. Generally the electron beam deliver energy around 40MeV˜60MeV to the transport beam line. However as we mentioned before with relatively low laser intensity the electron initial energy is required to be lower as well correspondently. We tried best to tuned ATF electron beam energy down to 15MeV. With laser intensity around a 0 ≈ 1.0 and electron beam 15MeV, our simulation indicates to see energy spread expansion after interaction, and this effect increases while the laser intensity increases (even slightly change from a 0 ≈ 0.9 to 2.2). The experiment design is completed based on ATF beam line condition. The design and layout are presented. All the optical devices are acquired and machined. Installation and alignment have been done a few times for testing. (Abstract shortened by UMI.)

Energy of atomic shakeoff electrons from positron decay of 37K

NASA Astrophysics Data System (ADS)

Behr, John; Fenker, Benjamin; Gorelov, Alexandre; Anholm, Melissa; Behling, Spencer; Mehlman, Michael; Melconian, Dan; Ashery, Danny; Gwinner, Gerald

2015-10-01

We have measured the low-energy atomic shakeoff electron spectrum from the β+ decay of 37K. We collect atomic electrons emitted from laser-cooled 37K using a nearly uniform electric field at low magnetic field into a position-sensitive microchannel plate. A coincidence with energetic β+s removes background. The differential position information translates to a differential electron energy spectrum. The energy spectrum from 1-100 eV is reproduced well by an analytic calculation for hydrogenic wavefunctions [Levinger PR 90 11 (1953)] using potassium quantum defects. Less than one percent of the electrons have energies higher than the 25 eV threshold for double DNA strand breaks, so relative biological effectiveness would not be altered by including these electrons. The average energy carried off by these electrons (a few eV) is smaller than expected from simple Thomas-Fermi estimates (65eV). Supported by NSERC, NRC through TRIUMF, U.S. D.O.E., State of Texas, Israel Science Foundation

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Nonlinear electromagnetic responses of active membrane protein complexes in live cells and organelles

NASA Astrophysics Data System (ADS)

Nawarathna, Dharmakirthi

The response of biological cells to an applied oscillating electric field contains both linear and nonlinear components (eg. induced harmonics). Such noninvasive measurements can be used to study active processes taking place inside the cells. The measurement of induced harmonics is the tool used for the study described here. A highly sensitive superconducting quantum interference device (SQUID) is used to detect the response at low frequencies, which greatly reduces electrode polarization effects. At high frequencies, a four- probe method is used. At low frequencies, harmonic generation by budding yeast cells in response to a sinusoidal electric field is reported, which is seen to be minimal when the field amplitude is less than a threshold value. Surprisingly, sodium metavanadate, an inhibitor of P-type ATPases and glucose, a substrate of P-type ATPase responsible for nonlinear response in yeast, reduces the threshold field amplitude, increasing harmonic generation at low amplitudes while reducing it at large amplitudes. We have thus proposed a model that explicitly introduces a threshold field, similar to those observed in density waves, where fields above threshold drive charge transport through an energy landscape with multiple wells, and in Coulomb blockade tunnel junctions, recently exploited to define the current standard. At high frequencies, the induced harmonics exhibit pronounced features that depend on the specific organism. Budding yeast (S. cerevisiae ) cells produce numerous harmonics. When the second or third harmonic amplitude is plotted vs. applied frequency, we observe two peaks, around 3 kHz and 12 kHz, which are suppressed by the respiratory inhibitor potassium cyanide. We then measured the response to oscillatory electric fields of intact bovine heart mitochondria, a reproducible second harmonic (at ˜3-4 kHz applied frequency) was detected. Further, with coupled mouse mitochondria, an ADP sensitive peak (˜ 12-15 kHz applied frequency) was observed, possibly due to the F0 domain of ATP synthase. Finally, harmonics generated by chloroplasts, the plant organelles responsible for photosynthesis, were measured, which are similar in structure and function to mitochondria, depend dramatically on incident light, and vanish in the absence of light. Using spinach chloroplasts, light sensitive peaks were detected in the range of 0--12 kHz, again suggesting that these harmonics are indicative of electron processes in the light harvesting complexes, reaction center, and/or photosynthetic electron transport chain.

Effects of Small Electrostatic Fields on the Ionospheric Density Profile

NASA Astrophysics Data System (ADS)

Salem, M. A.; Liu, N.; Rassoul, H.

2014-12-01

It is well known that short-lived strong electric fields produced by natural lightning activities in tropospheric altitudes can significantly affect the upper atmosphere. This effect is directly evidenced by the production of transient luminous events (TLEs), such as sprites, jets, and elves. It has also been demonstrated that thunderstorms can modify ionospheric densities on a longer time scale, during which TLEs may or may not occur [e.g., Cheng and Cummer, GRL, 32, L08804, 2005; Han and Cummer, JGR, 115, A09323, 2010; Shao et al., Nat. Geosci., doi: 10.1038/NGEO1668, 2012]. In particular, according to Shao et al. [2012], the electron density at 75-80 km altitudes may be reduced by about 2-3 orders of magnitude. In this talk, we study the modification of the ionospheric density profile by small electrostatic fields that may exist in the upper atmosphere during a thunderstorm. A simplified ion chemistry model described by Liu [JGR, 117, A03308, 2012] has been used to conduct this study. The model is based on the one developed by Lehtinen and Inan [GRL, 34, L08804, 2007], which is in turn an improved version of the GPI model discussed in Glukhov et al. [JGR, 97, 16971, 1992]. According to this model, the charged particles can be grouped into five species: electrons, light negative ions, cluster negative ions, light positive ions, and cluster positive ions. In this chemistry model, the three-body electron attachment is the only process whose rate constant depends on the electric field, when it is below about one third of the conventional breakdown threshold field. We have compared various sources of the three-body attachment rate constant. The result shows that the rate constant increases linearly with the reduced electric field in the range of 0 to 0.1 Td, while decreases exponentially from 0.1 Td to about one third of the conventional breakdown threshold field. With this dependence, our modeling results indicate that under the steady-state condition, the nighttime electron density profile can be reduced by about 40% or enhanced by a factor of about 6 when the electric field varies in the aforementioned range.

ELM suppression in helium plasmas with 3D magnetic fields

DOE PAGES

Evans, T. E.; Loarte, A.; Orlov, D. M.; ...

2017-06-21

Experiments in DIII-D, using non-axisymmetric magnetic perturbation fields in high-purity low toroidal rotation, 4He plasmas have resulted in Type-I edge localized mode (ELM) suppression and mitigation. Suppression is obtained in plasmas with zero net input torque near the L–H power threshold using either electron cyclotron resonant heating (ECRH) or balanced co- and counter-I p neutral beam injection (NBI) resulting in conditions equivalent to those expected in ITER's non-active operating phase. In low-power ECRH H-modes, periods with uncontrolled density and impurity radiation excursions are prevented by applying n = 3 non-axisymmetric magnetic perturbation fields. ELM suppression results from a reduction andmore » an outward shift of the electron pressure gradient peak compared to that in the high-power ELMing phase. Here, the change in the electron pressure gradient peak is primarily due to a drop in the pedestal temperature rather than the pedestal density.« less

ELM suppression in helium plasmas with 3D magnetic fields

NASA Astrophysics Data System (ADS)

Evans, T. E.; Loarte, A.; Orlov, D. M.; Grierson, B. A.; Knölker, M. M.; Lyons, B. C.; Cui, L.; Gohil, P.; Groebner, R. J.; Moyer, R. A.; Nazikian, R.; Osborne, T. H.; Unterberg, E. A.

2017-08-01

Experiments in DIII-D, using non-axisymmetric magnetic perturbation fields in high-purity low toroidal rotation, 4He plasmas have resulted in Type-I edge localized mode (ELM) suppression and mitigation. Suppression is obtained in plasmas with zero net input torque near the L-H power threshold using either electron cyclotron resonant heating (ECRH) or balanced co- and counter-I p neutral beam injection (NBI) resulting in conditions equivalent to those expected in ITER’s non-active operating phase. In low-power ECRH H-modes, periods with uncontrolled density and impurity radiation excursions are prevented by applying n  =  3 non-axisymmetric magnetic perturbation fields. ELM suppression results from a reduction and an outward shift of the electron pressure gradient peak compared to that in the high-power ELMing phase. The change in the electron pressure gradient peak is primarily due to a drop in the pedestal temperature rather than the pedestal density.

High voltage threshold for stable operation in a dc electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Masahiro, E-mail: masahiro@post.kek.jp; Nishimori, Nobuyuki, E-mail: n-nishim@tagen.tohoku.ac.jp

We report clear observation of a high voltage (HV) threshold for stable operation in a dc electron gun. The HV hold-off time without any discharge is longer than many hours for operation below the threshold, while it is roughly 10 min above the threshold. The HV threshold corresponds to the minimum voltage where discharge ceases. The threshold increases with the number of discharges during HV conditioning of the gun. Above the threshold, the amount of gas desorption per discharge increases linearly with the voltage difference from the threshold. The present experimental observations can be explained by an avalanche discharge modelmore » based on the interplay between electron stimulated desorption (ESD) from the anode surface and subsequent secondary electron emission from the cathode by the impact of ionic components of the ESD molecules or atoms.« less

Interball-1 and MIR orbital station coordinated magnetic field and energetic particles measurements

NASA Astrophysics Data System (ADS)

Klimov, S. I.; Grushin, V. A.; Lissakov, Yu. V.; Nozdrachev, M. N.; Petrukovich, A. A.; Grachev, E. A.; Grigoryan, O. R.; Lysakov, D. S.; Schwingenschuh, K.; Auster, H. U.; Fornacon, K.-H.; Rustenbach, J.; Korepanov, V. E.; Juchniewicz, J.; Afanasjev, Yu. V.; Kudela, K.

Magnetic field measurements in solar wind and outer magnetosphere onboard the INTERBALL-1 spacecraft were performed by the following magnetometers: MIF-M magnetometer with both DC sensor (BPP) having 0.2 nT threshold sensitivity at DC and 5 pT at 1 Hz and AC sensor (DM2) with the sensitivity about 0.2 nT at 1 Hz and 0.4 pT at 100 Hz; FGM-I DC magnetometer with threshold sensitivity of 5 pT at 1 Hz; FM-31 DC magnetometer with two sensors having 0.1 nT (sensor MI) and 1.0 nT (sensor M2) threshold sensitivity. During INTERBALL-1 operation the ionosphere experiment SPRUT-VI onboard the MIR station was performed from 06/13-08/26/1999. The measurements of DC magnetic field, electron and ion fluxes at energies between 50 keV-2.5 MeV and 50 keV-30 MeV were made. The SPRUT-MAG digital magnetometer for this experiment is based on the one developed for the ESA Rosetta Lander device ROMAP which threshold sensitivity was about 5 pT/(Hz) 1/2 at 1 Hz. This paper discusses the possibility of signals processing with the aim to separate the artificial (technical, connected with the MIR onboard system operation) and natural origin signals as well as to estimate the level of ULF/ELF magnetic field disturbances and particle flows bursts.

CRF-PEPICO: Double velocity map imaging photoelectron photoion coincidence spectroscopy for reaction kinetics studies

NASA Astrophysics Data System (ADS)

Sztáray, Bálint; Voronova, Krisztina; Torma, Krisztián G.; Covert, Kyle J.; Bodi, Andras; Hemberger, Patrick; Gerber, Thomas; Osborn, David L.

2017-07-01

Photoelectron photoion coincidence (PEPICO) spectroscopy could become a powerful tool for the time-resolved study of multi-channel gas phase chemical reactions. Toward this goal, we have designed and tested electron and ion optics that form the core of a new PEPICO spectrometer, utilizing simultaneous velocity map imaging for both cations and electrons, while also achieving good cation mass resolution through space focusing. These optics are combined with a side-sampled, slow-flow chemical reactor for photolytic initiation of gas-phase chemical reactions. Together with a recent advance that dramatically increases the dynamic range in PEPICO spectroscopy [D. L. Osborn et al., J. Chem. Phys. 145, 164202 (2016)], the design described here demonstrates a complete prototype spectrometer and reactor interface to carry out time-resolved experiments. Combining dual velocity map imaging with cation space focusing yields tightly focused photoion images for translationally cold neutrals, while offering good mass resolution for thermal samples as well. The flexible optics design incorporates linear electric fields in the ionization region, surrounded by dual curved electric fields for velocity map imaging of ions and electrons. Furthermore, the design allows for a long extraction stage, which makes this the first PEPICO experiment to combine ion imaging with the unimolecular dissociation rate constant measurements of cations to detect and account for kinetic shifts. Four examples are shown to illustrate some capabilities of this new design. We recorded the threshold photoelectron spectrum of the propargyl and the iodomethyl radicals. While the former agrees well with a literature threshold photoelectron spectrum, we have succeeded in resolving the previously unobserved vibrational structure in the latter. We have also measured the bimolecular rate constant of the CH2I + O2 reaction and observed its product, the smallest Criegee intermediate, CH2OO. Finally, the second dissociative photoionization step of iodocyclohexane ions, the loss of ethylene from the cyclohexyl cation, is slow at threshold, as illustrated by the asymmetric threshold photoionization time-of-flight distributions.

High-order above-threshold ionization beyond the electric dipole approximation

NASA Astrophysics Data System (ADS)

Brennecke, Simon; Lein, Manfred

2018-05-01

Photoelectron momentum distributions from strong-field ionization are calculated by numerical solution of the one-electron time-dependent Schrödinger equation for a model atom including effects beyond the electric dipole approximation. We focus on the high-energy electrons from rescattering and analyze their momentum component along the field propagation direction. We show that the boundary of the calculated momentum distribution is deformed in accordance with the classical three-step model including the beyond-dipole Lorentz force. In addition, the momentum distribution exhibits an asymmetry in the signal strengths of electrons emitted in the forward/backward directions. Taken together, the two non-dipole effects give rise to a considerable average forward momentum component of the order of 0.1 a.u. for realistic laser parameters.

Electronic and magneto-transport in chirality sorted carbon nanotube films

NASA Astrophysics Data System (ADS)

Janas, Dawid; Czechowski, Nikodem; Adamus, Zbigniew; GiŻewski, Tomasz

2018-01-01

This research details electronic and magneto-transport in unsorted and chirality-enriched carbon nanotube (CNT) films. By measuring the electrical conductivity from 4 K to 297 K, we were able to assign the governing mechanism of electronic transport. Fluctuation-induced tunnelling was in accordance with the obtained data and very well matched the underlying physics. We demonstrated how a change in the type of CNT to make the film affects its electrical performance. As the temperature was decreased down to cryogenic conditions, up to a 56-fold increase in resistance was noted. Moreover, the measurement of magnetoresistance (MR) revealed a non-monotonic dependence on the applied magnetic field. The initial negative component of MR was eventually overpowered by the positive MR component as the field strength was increased beyond a certain threshold.

Scaling Laws of the Two-Electron Sum-Energy Spectrum in Strong-Field Double Ionization.

PubMed

Ye, Difa; Li, Min; Fu, Libin; Liu, Jie; Gong, Qihuang; Liu, Yunquan; Ullrich, J

2015-09-18

The sum-energy spectrum of two correlated electrons emitted in nonsequential strong-field double ionization (SFDI) of Ar was studied for intensities of 0.3 to 2×10^{14} W/cm^{2}. We find the mean sum energy, the maximum of the distributions as well as the high-energy tail of the scaled (to the ponderomotive energy) spectra increase with decreasing intensity below the recollision threshold (BRT). At higher intensities the spectra collapse into a single distribution. This behavior can be well explained within a semiclassical model providing clear evidence of the importance of multiple recollisions in the BRT regime. Here, ultrafast thermalization between both electrons is found occurring within three optical cycles only and leaving its clear footprint in the sum-energy spectra.

Electron-bombarded 〈110〉-oriented tungsten tips for stable tunneling electron emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, T. K.; Abe, T.; Nazriq, N. M. K.

A clean tungsten (W) tip apex with a robust atomic plane is required for producing a stable tunneling electron emission under strong electric fields. Because a tip apex fabricated from a wire by aqueous chemical etching is covered by impurity layers, heating treatment in ultra-high vacuum is experimentally known to be necessary. However, strong heating frequently melts the tip apex and causes unstable electron emissions. We investigated quantitatively the tip apex and found a useful method to prepare a tip with stable tunneling electron emissions by controlling electron-bombardment heating power. Careful characterizations of the tip structures were performed with combinationsmore » of using field emission I–V curves, scanning electron microscopy, X-ray diffraction (transmitted Debye-Scherrer and Laue) with micro-parabola capillary, field ion microscopy, and field emission microscopy. Tips were chemically etched from (1) polycrystalline W wires (grain size ∼1000 nm) and (2) long-time heated W wires (grain size larger than 1 mm). Heating by 10-40 W (10 s) was found to be good enough to remove oxide layers and produced stable electron emission; however, around 60 W (10 s) heating was threshold power to increase the tip radius, typically +10 ± 5 nm (onset of melting). Further, the grain size of ∼1000 nm was necessary to obtain a conical shape tip apex.« less

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors

NASA Astrophysics Data System (ADS)

Choi, Barbara Yuri; Cho, Kyungjune; Pak, Jinsu; Kim, Tae-Young; Kim, Jae-Keun; Shin, Jiwon; Seo, Junseok; Chung, Seungjun; Lee, Takhee

2018-05-01

We investigated the effects of the structural defects intentionally created by electron-beam irradiation with an energy of 30 keV on the electrical properties of monolayer MoS2 field effect transistors (FETs). We observed that the created defects by electron beam irradiation on the MoS2 surface working as trap sites deteriorated the carrier mobility and carrier concentration with increasing the subthreshold swing value and shifting the threshold voltage in MoS2 FETs. The electrical properties of electron-beam irradiated MoS2 FETs were slightly improved by treating the devices with thiol-terminated molecules which presumably passivated the structural defects of MoS2. The results of this study may enhance the understanding of the electrical properties of MoS2 FETs in terms of creating and passivating defect sites.

Light-field-driven currents in graphene

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B.; Hommelhoff, Peter

2017-10-01

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10-15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10-18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in graphene take place on a hitherto unexplored timescale, faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). We expect these results to have direct ramifications for band-structure tomography and light-field-driven petahertz electronics.

Light-field-driven currents in graphene.

PubMed

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B; Hommelhoff, Peter

2017-10-12

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10 -15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10 -18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in graphene take place on a hitherto unexplored timescale, faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). We expect these results to have direct ramifications for band-structure tomography and light-field-driven petahertz electronics.

Born in weak fields: below-threshold photoelectron dynamics

NASA Astrophysics Data System (ADS)

Williams, J. B.; Saalmann, U.; Trinter, F.; Schöffler, M. S.; Weller, M.; Burzynski, P.; Goihl, C.; Henrichs, K.; Janke, C.; Griffin, B.; Kastirke, G.; Neff, J.; Pitzer, M.; Waitz, M.; Yang, Y.; Schiwietz, G.; Zeller, S.; Jahnke, T.; Dörner, R.

2017-02-01

We investigate the dynamics of ultra-low kinetic energy photoelectrons. Many experimental techniques employed for the detection of photoelectrons require the presence of (more or less) weak electric extraction fields in order to perform the measurement. Our studies show that ultra-low energy photoelectrons exhibit a characteristic shift in their apparent measured momentum when the target system is exposed to such static electric fields. Already fields as weak as 1 V cm-1 have an observable influence on the detected electron momentum. This apparent shift is demonstrated by an experiment on zero energy photoelectrons emitted from He and explained through theoretical model calculations.

Atomic photoionization in a strong magnetic field

NASA Astrophysics Data System (ADS)

Greene, C. H.

1983-10-01

The photoionization of hydrogen atoms in a strong magnetic field is formulated as a multichannel problem by representing the asymptotic electron-wave function in cylindrical coordinates. Departures from cylindrical symmetry close to the nucleus are incorporated by an R-matrix treatment at short range, which then merges with standard quantum-defect procedures. The R-matrix calculation utilizes the eigenchannel approach, recast in noniterative form. At the field strength treated here, B = 4.7 x 10 to the 9th G, the photoionization cross section displays narrow 'autoionizing' resonances near the excited Landau thresholds.

Organic nanowire hierarchy over fabric platform for flexible cold cathode

NASA Astrophysics Data System (ADS)

Maiti, Soumen; Narayan Maiti, Uday; Pal, Shreyasi; Chattopadhyay, Kalyan Kumar

2013-11-01

Organic charge transfer (CT) complexes initiated a growing interest in modern electronic devices owing to their easy processability and unique characteristics. In this work, three-dimensional field emitters comprising metal-organic charge transfer complex nanostructures of AgTCNQ and CuTCNQ (TCNQ, 7,7,8,8-tetracyanoquinodimethane) over flexible fabric substrate are realized. Deliberate control over the reaction parameter during organic solid phase reaction leads to modification in structural parameters of the nanowires (i.e. length, diameter) as well as their arrangement atop the carbon fibers. The optimized arrays of AgTCNQ and CuTCNQ nanowires exhibit excellent field electron emission performance with very low turn-on (1.72 and 2.56 V μm-1) and threshold fields (4.21 and 6.33 V μm-1) respectively, which are comparable to those of the best organic field emitters reported to date. The underlying conducting carbon cloth with special woven-like geometry not only offers a flexible platform for nanowire growth, but also provides an additional field enhancement to ease the electron emission.

Measurement of the reaction 2H(e,e') at 180 degrees close to the deuteron breakup threshold.

PubMed

Ryezayeva, N; Arenhövel, H; Burda, O; Byelikov, A; Chernykh, M; Enders, J; Griesshammer, H W; Kalmykov, Y; von Neumann-Cosel, P; Ozel, B; Poltoratska, I; Pysmenetska, I; Rangacharyulu, C; Rathi, S; Richter, A; Schrieder, G; Shevchenko, A; Yevetska, O

2008-05-02

Inclusive inelastic electron scattering off the deuteron under 180 degrees has been studied at the S-DALINAC close to the breakup threshold at momentum transfers q=0.27 fm;{-1} and 0.74 fm;{-1} with good energy resolution sufficient to map in detail the spin flip M1 response, which governs the starting reaction pn-->dgamma of big-bang nucleosynthesis over most of the relevant temperature region. Results from potential model calculations and (for q=0.27 fm;{-1}) from pionless nuclear effective field theory are in excellent agreement with the data.

Electron Heating in Low-Mach-number Perpendicular Shocks. I. Heating Mechanism

NASA Astrophysics Data System (ADS)

Guo, Xinyi; Sironi, Lorenzo; Narayan, Ramesh

2017-12-01

Recent X-ray observations of merger shocks in galaxy clusters have shown that the postshock plasma has two temperatures, with the protons hotter than the electrons. By means of two-dimensional particle-in-cell simulations, we study the physics of electron irreversible heating in low-Mach-number perpendicular shocks, for a representative case with sonic Mach number of 3 and plasma beta of 16. We find that two basic ingredients are needed for electron entropy production: (1) an electron temperature anisotropy, induced by field amplification coupled to adiabatic invariance; and (2) a mechanism to break the electron adiabatic invariance itself. In shocks, field amplification occurs at two major sites: at the shock ramp, where density compression leads to an increase of the frozen-in field; and farther downstream, where the shock-driven proton temperature anisotropy generates strong proton cyclotron and mirror modes. The electron temperature anisotropy induced by field amplification exceeds the threshold of the electron whistler instability. The growth of whistler waves breaks the electron adiabatic invariance and allows for efficient entropy production. For our reference run, the postshock electron temperature exceeds the adiabatic expectation by ≃ 15 % , resulting in an electron-to-proton temperature ratio of ≃ 0.45. We find that the electron heating efficiency displays only a weak dependence on mass ratio (less than ≃ 30 % drop, as we increase the mass ratio from {m}i/{m}e=49 up to {m}i/{m}e=1600). We develop an analytical model of electron irreversible heating and show that it is in excellent agreement with our simulation results.

Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

2016-10-01

Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Chang Bum

2014-08-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔVT) is presented by providing a ΔVT model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ˜1.8 and ˜2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time.

s-wave threshold in electron attachment - Observations and cross sections in CCl4 and SF6 at ultralow electron energies

NASA Technical Reports Server (NTRS)

Chutjian, A.; Alajajian, S. H.

1985-01-01

The threshold photoionization method was used to study low-energy electron attachment phenomena in and cross sections of CCl4 and SF6 compounds, which have applications in the design of gaseous dielectrics and diffuse discharge opening switches. Measurements were made at electron energies from below threshold to 140 meV at resolutions of 6 and 8 meV. A narrow resolution-limited structure was observed in electron attachment to CCl4 and SF6 at electron energies below 10 meV, which is attributed to the divergence of the attachment cross section in the limit epsilon, l approaches zero. The results are compared with experimental collisional-ionization results, electron-swarm unfolded cross sections, and earlier threshold photoionization data.

Oscillating two-stream instability in a magnetized electron-positron-ion plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tinakiche, Nouara; Faculty of Physics, U.S.T.H.B, Algiers 16111; Annou, R.

2015-04-15

Oscillating two-stream instability (OTSI) in a magnetized electron-ion plasma has been thoroughly studied, e.g., in ionospheric heating experiments [C. S. Liu and V. K. Tripathi, Interaction of Electromagnetic Waves With Electron Beams and Plasmas (World Scientific, 1994); V. K. Tripathi and P. V. Siva Rama Prasad, J. Plasma Phys. 41, 13 (1989); K. Ramachandran and V. K. Tripathi, IEEE Trans. Plasma Sci. 25, 423 (1997)]. In this paper, OTSI is investigated in a magnetized electron-positron-ion plasma. The dispersion relation of the process is established. The pump field threshold, along with the maximum growth rate of the instability is assessed usingmore » the Arecibo and HAARP parameters.« less

Oscillating two-stream instability in a magnetized electron-positron-ion plasma

NASA Astrophysics Data System (ADS)

Tinakiche, Nouara; Annou, R.

2015-04-01

Oscillating two-stream instability (OTSI) in a magnetized electron-ion plasma has been thoroughly studied, e.g., in ionospheric heating experiments [C. S. Liu and V. K. Tripathi, Interaction of Electromagnetic Waves With Electron Beams and Plasmas (World Scientific, 1994); V. K. Tripathi and P. V. Siva Rama Prasad, J. Plasma Phys. 41, 13 (1989); K. Ramachandran and V. K. Tripathi, IEEE Trans. Plasma Sci. 25, 423 (1997)]. In this paper, OTSI is investigated in a magnetized electron-positron-ion plasma. The dispersion relation of the process is established. The pump field threshold, along with the maximum growth rate of the instability is assessed using the Arecibo and HAARP parameters.

Absolute cross-section measurements of inner-shell ionization

NASA Astrophysics Data System (ADS)

Schneider, Hans; Tobehn, Ingo; Ebel, Frank; Hippler, Rainer

1994-12-01

Cross section ratios for K- and L-shell ionization of thin silver and gold targets by positron and electron impact have been determined at projectile energies of 30 70 keV. The experimental results are confirmed by calculations in plane wave Born approximation (PWBA) which include an electron exchange term and account for the deceleration or acceleration of the incident projectile in the nuclear field of the target atom. We report first absolute cross sections for K- and L-shell ionization of silver and gold targets by lepton impact in the threshold region. We have measured the corresponding cross sections for electron (e-) impact with an electron gun and the same experimental set-up.

Synthesis of carbon nanofibres from waste chicken fat for field electron emission applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suriani, A.B., E-mail: absuriani@yahoo.com; Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, Tanjung Malim, Perak 35900; Dalila, A.R.

Highlights: • Waste chicken fat is used as a starting material to produce CNFs via TCVD method. • High heating rate applied resulted in aggregation of catalyst particles. • Aggregated catalyst produced sea urchin-like CNFs with amorphous nature. • The as-grown CNFs presented a potential for field electron emission applications. - Abstract: Carbon nanofibres (CNFs) with sea urchin-like morphology were synthesised from waste chicken fat precursor via catalytic thermal chemical vapour deposition method at 750 °C. The CNFs showed amorphous structures under high-resolution transmission electron microscopy, micro-Raman spectroscopy and X-ray diffraction examination. X-ray photoelectron spectroscopy analysis confirmed that the coremore » of the sea urchin-like CNFs was composed of Fe{sub 3}C formed within the first 20 min of synthesis time. The growth of amorphous CNFs from agglomerated Fe{sub 3}C particles was favourable due to the high heating rate applied during the synthesis. Field electron emission examination of the CNFs indicated turn-on and threshold field values of 5.4 and 6.6 V μm{sup −1} at current density of 1 and 10 μA cm{sup −2}, respectively. This study demonstrates that waste chicken fat, a low-cost and readily available resource, can be used as an inexpensive carbon source for the production of CNFs with a potential application in field electron emitters.« less

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

NASA Astrophysics Data System (ADS)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Optimum threshold selection method of centroid computation for Gaussian spot

NASA Astrophysics Data System (ADS)

Li, Xuxu; Li, Xinyang; Wang, Caixia

2015-10-01

Centroid computation of Gaussian spot is often conducted to get the exact position of a target or to measure wave-front slopes in the fields of target tracking and wave-front sensing. Center of Gravity (CoG) is the most traditional method of centroid computation, known as its low algorithmic complexity. However both electronic noise from the detector and photonic noise from the environment reduces its accuracy. In order to improve the accuracy, thresholding is unavoidable before centroid computation, and optimum threshold need to be selected. In this paper, the model of Gaussian spot is established to analyze the performance of optimum threshold under different Signal-to-Noise Ratio (SNR) conditions. Besides, two optimum threshold selection methods are introduced: TmCoG (using m % of the maximum intensity of spot as threshold), and TkCoG ( usingμn +κσ n as the threshold), μn and σn are the mean value and deviation of back noise. Firstly, their impact on the detection error under various SNR conditions is simulated respectively to find the way to decide the value of k or m. Then, a comparison between them is made. According to the simulation result, TmCoG is superior over TkCoG for the accuracy of selected threshold, and detection error is also lower.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

The collisional drift mode in a partially ionized plasma. [in the F region

NASA Technical Reports Server (NTRS)

Hudson, M. K.; Kennel, C. F.

1974-01-01

The structure of the drift instability was examined in several density regimes. Let sub e be the total electron mean free path, k sub z the wave-vector component along the magnetic field, and the ratio of perpendicular ion diffusion to parallel electron streaming rates. At low densities (k sub z lambda 1) the drift mode is isothermal and should be treated kineticly. In the finite heat conduction regime square root of m/M k sub z Lambda sub 1) the drift instability threshold is reduced at low densities and increased at high densities as compared to the isothermal threshold. Finally, in the energy transfer limit (k sub z kambda sub e square root of m/M) the drift instability behaves adiabatically in a fully ionized plasma and isothermally in a partially ionized plasma for an ion-neutral to Coulomb collision frequency ratio.

New self-magnetically insulated connection of multilevel accelerators to a common load

DOE PAGES

VanDevender, J. Pace; Langston, William L.; Pasik, Michael F.; ...

2015-03-04

A new way to connect pulsed-power modules to a common load is presented. Unlike previous connectors, the clam shell magnetically insulated transmission line (CSMITL) has magnetic nulls only at large radius where the cathode electric field is kept below the threshold for emission, has only a simply connected magnetic topology to avoid plasma motion along magnetic field lines into highly stressed gaps, and has electron injectors that ensure efficient electron flow even in the limiting case of self-limited MITLs. Multilevel magnetically insulated transmission lines with a posthole convolute are the standard solution but associated losses limit the performance of state-of-the-artmore » accelerators. Mitigating these losses is critical for the next generation of pulsed-power accelerators. A CSMITL has been successfully implemented on the Saturn accelerator. A reference design for the Z accelerator is derived and presented. The design conservatively meets the design requirements and shows excellent transport efficiency in three simulations of increasing complexity: circuit simulations, electromagnetic fields only with Emphasis, fields plus electron and ion emission with Quicksilver.« less

Controlling electron quantum paths for generation of circularly polarized high-order harmonics by H2+ subject to tailored (ω , 2 ω ) counter-rotating laser fields

NASA Astrophysics Data System (ADS)

Heslar, John; Telnov, Dmitry A.; Chu, Shih-I.

2018-04-01

Recently, studies of high-order harmonics (HHG) from atoms driven by bichromatic counter-rotating circularly polarized laser fields as a source of coherent circularly polarized extreme ultraviolet (XUV) and soft-x-ray beams in a tabletop-scale setup have received considerable attention. Here, we demonstrate the ability to control the electron recollisions giving three returns per one cycle of the fundamental frequency ω by using tailored bichromatic (ω , 2 ω ) counter-rotating circularly polarized laser fields with a molecular target. The full control of the electronic pathway is first analyzed by a classical trajectory analysis and then extended to a detailed quantum study of H2+ molecules in bichromatic (ω , 2 ω ) counter-rotating circularly polarized laser fields. The radiation spectrum contains doublets of left- and right-circularly polarized harmonics in the XUV ranges. We study in detail the below-, near-, and above-threshold harmonic regions and describe how excited-state resonances alter the ellipticity and phase of the generated harmonic peaks.

Internal Electrostatic Discharge Monitor - IESDM

NASA Technical Reports Server (NTRS)

Kim, Wousik; Goebel, Dan M.; Jun, Insoo; Garrett, Henry B.

2011-01-01

A document discusses an innovation designed to effectively monitor dielectric charging in spacecraft components to measure the potential for discharge in order to prevent damage from internal electrostatic discharge (IESD). High-energy electrons penetrate the structural materials and shielding of a spacecraft and then stop inside dielectrics and keep accumulating. Those deposited charges generate an electric field. If the electric field becomes higher than the breakdown threshold (approx. =2 x 10(exp 5) V/cm), discharge occurs. This monitor measures potentials as a function of dielectric depth. Differentiation of potential with respect to the depth yields electric field. Direct measurement of the depth profile of the potential in a dielectric makes real-time electronic field evaluation possible without simulations. The IESDM has been designed to emulate a multi-layer circuit board, to insert very thin metallic layers between the dielectric layers. The conductors serve as diagnostic monitoring locations to measure the deposited electron-charge and the charge dynamics. Measurement of the time-dependent potential of the metal layers provides information on the amount of charge deposited in the dielectrics and the movement of that charge with time (dynamics).

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Suppressing Electron Turbulence and Triggering Internal Transport Barriers with Reversed Magnetic Shear in the National Spherical Torus Experiment

NASA Astrophysics Data System (ADS)

Peterson, Jayson Luc

2011-10-01

Observations in the National Spherical Torus Experiment (NSTX) have found electron temperature gradients that greatly exceed the linear threshold for the onset for electron temperature gradient-driven (ETG) turbulence. These discharges, deemed electron internal transport barriers (e-ITBs), coincide with a reversal in the shear of the magnetic field and with a reduction in electron-scale density fluctuations, qualitatively consistent with earlier gyrokinetic predictions. To investigate this phenomenon further, we numerically model electron turbulence in NSTX reversed-shear plasmas using the gyrokinetic turbulence code GYRO. These first-of-a-kind nonlinear gyrokinetic simulations of NSTX e-ITBs confirm that reversing the magnetic shear can allow the plasma to reach electron temperature gradients well beyond the critical gradient for the linear onset of instability. This effect is very strong, with the nonlinear threshold for significant transport approaching three times the linear critical gradient in some cases, in contrast with moderate shear cases, which can drive significant ETG turbulence at much lower gradients. In addition to the experimental implications of this upshifted nonlinear critical gradient, we explore the behavior of ETG turbulence during reversed shear discharges. This work is supported by the SciDAC Center for the Study of Plasma Microturbulence, DOE Contract DE-AC02-09CH11466, and used the resources of NCCS at ORNL and NERSC at LBNL. M. Ono et al., Nucl. Fusion 40, 557 (2000).

Solution of the many-electron many-photon problem for strong fields: Application to Li{sup -} in one- and two-color laser fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mercouris, Theodoros; Nicolaides, Cleanthes A.; Physics Department, National Technical University, Athens

2003-06-01

The solution of the many-electron many-photon (MEMP) problem for strong fields is facilitated if the corresponding theory entails a computational methodology that combines economy with accuracy and generality, as regards electronic structure and the incorporation of the continuous spectrum. By applying the nonperturbative MEMP theory (MEMPT) to the prototypical Li{sup -} {sup 1}S state, where both radial and angular correlations in the initial state and interchannel couplings in the final scattering states cannot be ignored, we computed frequency-dependent widths {gamma}({omega}) of multiphoton detachment, as well as energy shifts {delta}({omega}), for intensities 1x10{sup 9}-1x10{sup 11} W/cm{sup 2}, using one- as wellmore » as two-color fields. Even though the 1s{sup 2}2p {sup 2}P{sup o} threshold is kept energetically closed, its coupling to the open channel 1s{sup 2}2s {sup 2}S cannot be ignored. For the two-color MEMP problem, the present application of the MEMPT provides results for a four-electron system, whereby the self-consistent field, electron correlation, and interchannel coupling are taken into account. The results for ({omega}, 3{omega}) laser fields exhibit the recently predicted [Th. Mercouris and C.A. Nicolaides, Phys. Rev. A 63, 013411 (2001)] linear dependence of the rate on cos {phi}, where {phi} is the phase difference of the two weak fields. Based on this and on lowest-order perturbation theory (LOPT), we obtain a quantity characteristic of the system atom plus fields, which we name the 'interference generalized cross section'. For the one-color system, comparison is made with our previous conclusions [C.A. Nicolaides and Th. Mercouris, Chem. Phys. Lett. 159, 45 (1989); J. Opt. Soc. Am. B 7, 494 (1990)] and with results from recent calculations of the two- and three-photon detachment rates by Glass et al. [J. Phys. B 31, L667 (1998)], who implemented R-matrix Floquet theory, and by Telnov and Chu [Phys. Rev. A 66, 043417 (2002)], who implemented time-dependent density-functional theory in the Floquet formulation via exterior complex scaling. Similarities as well as discrepancies are observed. Our results for {gamma}({omega}) and {delta}({omega}) involve a dense set of values as a function of {omega} and provide a clear picture of the physics below, at, and above the 3{yields}2 photon threshold.« less

Particle-in-Cell Simulations of the Twisted Magnetospheres of Magnetars. I.

NASA Astrophysics Data System (ADS)

Chen, Alexander Y.; Beloborodov, Andrei M.

2017-08-01

The magnetospheres of magnetars are believed to be filled with electron-positron plasma generated by electric discharge. We present a first numerical experiment demonstrating this process in an axisymmetric magnetosphere with a simple threshold prescription for pair creation, which is applicable to the inner magnetosphere with an ultrastrong field. The {e}+/- discharge occurs in response to the twisting of the closed magnetic field lines by a shear deformation of the magnetar surface, which launches electric currents into the magnetosphere. The simulation shows the formation of an electric “gap” with an unscreened electric field ({\\boldsymbol{E}}\\cdot {\\boldsymbol{B}}\

Analytic quantum-interference conditions in Coulomb corrected photoelectron holography

NASA Astrophysics Data System (ADS)

Maxwell, A. S.; Al-Jawahiry, A.; Lai, X. Y.; Figueira de Morisson Faria, C.

2018-02-01

We provide approximate analytic expressions for above-threshold ionization (ATI) transition probabilities and photoelectron angular distributions. These analytic expressions are more general than those existing in the literature and include the residual binding potential in the electron continuum propagation. They successfully reproduce the ATI side lobes and specific holographic structures such as the near-threshold fan-shaped pattern and the spider-like structure that extends up to relatively high photoelectron energies. We compare such expressions with the Coulomb quantum orbit strong-field approximation (CQSFA) and the full solution of the time-dependent Schrödinger equation for different driving-field frequencies and intensities, and provide an in-depth analysis of the physical mechanisms behind specific holographic structures. Our results shed additional light on what aspects of the CQSFA must be prioritized in order to obtain the key holographic features, and highlight the importance of forward scattered trajectories. Furthermore, we find that the holographic patterns change considerably for different field parameters, even if the Keldysh parameter is kept roughly the same.

Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications.

PubMed

Park, Sangjun; Gupta, Amar Prasad; Yeo, Seung Jun; Jung, Jaeik; Paik, Sang Hyun; Mativenga, Mallory; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2018-05-29

In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT) field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD) process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE) characteristics with respective turn on (1 μA/cm²) and threshold (1 mA/cm²) field of 2.84 and 4.05 V/μm were obtained. For a field of 5.24 V/μm, maximum current density of 7 mA/cm² was achieved and a field enhancement factor β of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm² for 420 min under a field of 5.2 V/μm, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.

Energy band and transport properties in magnetic aperiodic graphene superlattices of Thue-Morse sequence

NASA Astrophysics Data System (ADS)

Yin, Yiheng; Niu, Yanxiong; Zhang, Huiyun; Zhang, Yuping; Liu, Haiyue

2016-02-01

Utilizing the transfer matrix method, we develop the electronic band structure and transport properties in Thue-Morse aperiodic graphene superlattices with magnetic barriers. It is found that the normal transmission is blocked and the position of the Dirac point can be shifted along the wavevector axis by changing the height and width ratio of magnetic barriers, which is intrinsic different from electronic field modulated superlattices. In addition, the angular threshold property of the transmission spectra and the oscillatory property of the conductance have been studied.

The nonlinear gyroresonance interaction between energetic electrons and coherent VLF waves propagating at an arbitrary angle with respect to the earth's magnetic field

NASA Technical Reports Server (NTRS)

Bell, T. F.

1984-01-01

A theory is presented of the nonlinear gyroresonance interaction that takes place in the magnetosphere between energetic electrons and coherent VLF waves propagating in the whistler mode at an arbitrary angle psi with respect to the earth's magnetic field B-sub-0. Particularly examined is the phase trapping (PT) mechanism believed to be responsible for the generation of VLF emissions. It is concluded that near the magnetic equatorial plane gradients of psi may play a very important part in the PT process for nonducted waves. Predictions of a higher threshold value for PT for nonducted waves generally agree with experimental data concerning VLF emission triggering by nonducted waves.

A time-of-flight spectrometer for measuring inelastic to elastic differential cross-section ratios for electron-gas scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

LeClair, L.R.; Trajmar, S.; Khakoo, M.A.

1996-05-01

We describe a crossed electron beam-atomic beam apparatus which utilizes a pulsed electron gun and field free drift tube to obtain time-of-flight (TOF) spectra of electrons scattered from atoms and molecules. This apparatus was constructed for the purpose of obtaining inelastic-to-elastic differential cross-section (DCS) ratios in the energy range extending from threshold to several eV above the threshold of the inelastic channel. The TOF approach eliminates the need for complicated calibration procedures required when using conventional electrostatic electron energy-loss spectroscopy (EELS) at these low energies. The characteristics of the apparatus will be given, along with representative TOF spectra from carbonmore » monoxide. From those spectra we obtained DCS ratios at 90{degree} scattering angle for excitation of the {ital a}{sup 3}{Pi} state of CO, in the impact energy range of 6{endash}15 eV. These ratios were measured with uncertainties as small as {plus_minus}4{percent}, which represents a substantial improvement over previous measurements in this energy range. This demonstrates the feasibility of using the TOF technique to measure DCS ratios which in turn can serve as secondary standards to normalize other inelastic DCSs obtained from measurements with EELS. {copyright} {ital 1996 American Institute of Physics.}« less

Efficient pre-ionization by direct X-B mode conversion in VEST

NASA Astrophysics Data System (ADS)

Jo, JongGab; Lee, H. Y.; Kim, S. C.; Kim, S. H.; An, Y. H.; Hwang, Y. S.

2017-01-01

Pre-ionization experiments with pure toroidal field have been carried out in VEST (Versatile Experiment Spherical Torus) to investigate the feasibility of direct XB mode conversion from perpendicular LFS (Low Field Side) injection for efficient pre-ionization. Pre-ionization plasmas are studied by measuring the electron density and temperature profiles with respect to microwave power and toroidal field strength, and 2D full wave cold plasma simulation using the COMSOL Multiphysics is performed for the comparison. It is experimentally figured out that exceeding the threshold microwave power (>3 kW), the parametric decay and localized collisional heating is observed near the UHR (Upper Hybrid Resonance), and the efficient XB mode conversion can be achieved in both short density scale length (Ln) and magnetic scale length (LB) region positioned at outboard and inboard sides, respectively. From the 2D full wave simulations, the reflection and tunneling of X-wave near the R-cutoff layer according to the measured electron density profiles are analyzed with electric field polarization and power flow. Threshold electric field and wave power density for parametric decay are evaluated at least more than 4.8 × 104 V/m and 100 W/cm2, respectively. This study shows that efficient pre-ionization schemes using direct XB mode conversion can be realized by considering the key factors such as Ln, LB, and transmitted wave power at the UHR. Application to Ohmic start-up experiment is carried out to confirm the effect of the pre-ionization schemes on tokamak plasma start-up in VEST.

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

2018-03-01

We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

Observation of trapped-electron-mode microturbulence in reversed field pinch plasmas

NASA Astrophysics Data System (ADS)

Duff, J. R.; Williams, Z. R.; Brower, D. L.; Chapman, B. E.; Ding, W. X.; Pueschel, M. J.; Sarff, J. S.; Terry, P. W.

2018-01-01

Density fluctuations in the large-density-gradient region of improved confinement Madison Symmetric Torus reversed field pinch (RFP) plasmas exhibit multiple features that are characteristic of the trapped-electron mode (TEM). Core transport in conventional RFP plasmas is governed by magnetic stochasticity stemming from multiple long-wavelength tearing modes. Using inductive current profile control, these tearing modes are reduced, and global confinement is increased to that expected for comparable tokamak plasmas. Under these conditions, new short-wavelength fluctuations distinct from global tearing modes appear in the spectrum at a frequency of f ˜ 50 kHz, which have normalized perpendicular wavenumbers k⊥ρs≲ 0.2 and propagate in the electron diamagnetic drift direction. They exhibit a critical-gradient threshold, and the fluctuation amplitude increases with the local electron density gradient. These characteristics are consistent with predictions from gyrokinetic analysis using the Gene code, including increased TEM turbulence and transport from the interaction of remnant tearing magnetic fluctuations and zonal flow.

Electron-atom spin asymmetry and two-electron photodetachment - Addenda to the Coulomb-dipole threshold law

NASA Technical Reports Server (NTRS)

Temkin, A.

1984-01-01

Temkin (1982) has derived the ionization threshold law based on a Coulomb-dipole theory of the ionization process. The present investigation is concerned with a reexamination of several aspects of the Coulomb-dipole threshold law. Attention is given to the energy scale of the logarithmic denominator, the spin-asymmetry parameter, and an estimate of alpha and the energy range of validity of the threshold law, taking into account the result of the two-electron photodetachment experiment conducted by Donahue et al. (1984).

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Klochkov, A. N.

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of themore » laser ridge stripe with an n{sup +}-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.« less

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Photoionization microscopy: Hydrogenic theory in semiparabolic coordinates and comparison with experimental results

NASA Astrophysics Data System (ADS)

Kalaitzis, P.; Danakas, S.; Lépine, F.; Bordas, C.; Cohen, S.

2018-05-01

Photoionization microscopy (PM) is an experimental method allowing for high-resolution measurements of the electron current probability density in the case of photoionization of an atom in an external uniform static electric field. PM is based on high-resolution velocity-map imaging and offers the unique opportunity to observe the quantum oscillatory spatial structure of the outgoing electron flux. We present the basic elements of the quantum-mechanical theoretical framework of PM for hydrogenic systems near threshold. Our development is based on the computationally more convenient semiparabolic coordinate system. Theoretical results are first subjected to a quantitative comparison with hydrogenic images corresponding to quasibound states and a qualitative comparison with nonresonant images of multielectron atoms. Subsequently, particular attention is paid on the structure of the electron's momentum distribution transversely to the static field (i.e., of the angularly integrated differential cross-section as a function of electron energy and radius of impact on the detector). Such 2D maps provide at a glance a complete picture of the peculiarities of the differential cross-section over the entire near-threshold energy range. Hydrogenic transverse momentum distributions are computed for the cases of the ground and excited initial states and single- and two-photon ionization schemes. Their characteristics of general nature are identified by comparing the hydrogenic distributions among themselves, as well as with a presently recorded experimental distribution concerning the magnesium atom. Finally, specificities attributed to different target atoms, initial states, and excitation scenarios are also discussed, along with directions of further work.

Dynamics of photoionization from molecular electronic wavepacket states in intense pulse laser fields: A nonadiabatic electron wavepacket study.

PubMed

Matsuoka, Takahide; Takatsuka, Kazuo

2017-04-07

A theory for dynamics of molecular photoionization from nonadiabatic electron wavepackets driven by intense pulse lasers is proposed. Time evolution of photoelectron distribution is evaluated in terms of out-going electron flux (current of the probability density of electrons) that has kinetic energy high enough to recede from the molecular system. The relevant electron flux is in turn evaluated with the complex-valued electronic wavefunctions that are time evolved in nonadiabatic electron wavepacket dynamics in laser fields. To uniquely rebuild such wavefunctions with its electronic population being lost by ionization, we adopt the complex-valued natural orbitals emerging from the electron density as building blocks of the total wavefunction. The method has been implemented into a quantum chemistry code, which is based on configuration state mixing for polyatomic molecules. Some of the practical aspects needed for its application will be presented. As a first illustrative example, we show the results of hydrogen molecule and its isotope substitutes (HD and DD), which are photoionized by a two-cycle pulse laser. Photon emission spectrum associated with above threshold ionization is also shown. Another example is taken from photoionization dynamics from an excited state of a water molecule. Qualitatively significant effects of nonadiabatic interaction on the photoelectron spectrum are demonstrated.

Laser-Induced Modification Of Energy Bands Of Transparent Solids

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2010-10-01

Laser-induced variations of electron energy bands of transparent solids significantly affect the initial stages of laser-induced ablation (LIA) influencing rates of ionization and light absorption by conduction-band electrons. We analyze fast variations with characteristic duration in femto-second time domain that include: 1) switching electron functions from bonding to anti-bonding configuration due to laser-induced ionization; 2) laser-driven oscillations of electrons in quasi-momentum space; and 3) direct distortion of the inter-atomic potential by electric field of laser radiation. Among those effects, the latter two have zero delay and reversibly modify band structure taking place from the beginning of laser action. They are of special interest due to their strong influence on the initial stage and threshold of laser ablation. The oscillations modify the electron-energy bands by adding pondermotive potential. The direct action of radiation's electric field leads to high-frequency Franz-Keldysh effect (FKE) spreading the allowed electron states into the forbidden-energy bands. FKE provides decrease of the effective band gap while the electron oscillations lead either to monotonous increase or oscillatory variations of the gap. We analyze the competition between those two opposite trends and their role in initiating LIA.

A perturbative correction for electron-inertia in magnetized sheath structures

NASA Astrophysics Data System (ADS)

Gohain, Munmi; Karmakar, Pralay K.

2016-10-01

We propose a hydrodynamic model to study the equilibrium properties of planar plasma sheaths in two-component quasi-neutral magnetized plasmas. It includes weak but finite electron-inertia incorporated via a regular perturbation of the electronic fluid dynamics only relative to a new smallness parameter, δ, assessing the weak inertial-to-electromagnetic strengths. The zeroth-order perturbation around δ leads to the usual Boltzmann distribution law, which describes inertialess thermalized electrons. The forthwith next higher-order yields the modified Boltzmann law describing the putative lowest-order electron-inertial correction, which is applied meticulously to derive the local Bohm criterion for sheath formation. It is found to be influenced jointly by electron-inertial corrective effects, magnetic field and field orientation relative to the bulk plasma flow. We establish that the mutualistic action of electron-inertia amid gyro-kinetic effects slightly enhances the ion-flow Mach threshold value (typically, M i0 ⩾ 1.140), against the normal value of unity, confrontationally towards the sheath entrance. A numerical illustrative scheme is methodically constructed to see the parametric dependence of the new sheath properties on diverse problem arguments. The merits and demerits are highlighted in the light of the existing results conjointly with clear indication to future ameliorations.

Regular threshold-energy increase with charge for neutral-particle emission in collisions of electrons with oligonucleotide anions.

PubMed

Tanabe, T; Noda, K; Saito, M; Starikov, E B; Tateno, M

2004-07-23

Electron-DNA anion collisions were studied using an electrostatic storage ring with a merging electron-beam technique. The rate of neutral particles emitted in collisions started to increase from definite threshold energies, which increased regularly with ion charges in steps of about 10 eV. These threshold energies were almost independent of the length and sequence of DNA, but depended strongly on the ion charges. Neutral particles came from breaks of DNAs, rather than electron detachment. The step of the threshold energy increase approximately agreed with the plasmon excitation energy. It is deduced that plasmon excitation is closely related to the reaction mechanism. Copyright 2004 The American Physical Society

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

Plasma response to m/n  =  3/1 resonant magnetic perturbation at J-TEXT Tokamak

NASA Astrophysics Data System (ADS)

Hu, Qiming; Li, Jianchao; Wang, Nengchao; Yu, Q.; Chen, Jie; Cheng, Zhifeng; Chen, Zhipeng; Ding, Yonghua; Jin, Hai; Li, Da; Li, Mao; Liu, Yang; Rao, Bo; Zhu, Lizhi; Zhuang, Ge; the J-TEXT Team

2016-09-01

The influence of resonant magnetic perturbations (RMPs) with a large m/n  =  3/1 component on electron density has been studied at J-TEXT tokamak by using externally applied static and rotating RMPs, where m and n are the poloidal and toroidal mode number, respectively. The detailed time evolution of electron density profile, measured by the polarimeter-interferometer, shows that the electron density n e first increases (decreases) inside (around/outside) of the 3/1 rational surface (RS), and it is increased globally later together with enhanced edge recycling. Associated with field penetration, the toroidal rotation around the 3/1 RS is accelerated in the co-I p direction and the poloidal rotation is changed from the electron to ion diamagnetic drift direction. Spontaneous unlocking-penetration circles occur after field penetration if the RMPs amplitude is not strong enough. For sufficiently strong RMPs, the 2/1 locked mode is also triggered due to mode coupling, and the global density is increased. The field penetration threshold is found to be linearly proportional to n eL (line-integrated density) at the 3/1 RS but to (n eL)0.73 for n e at the plasma core. In addition, for rotating RMPs with a large 3/1 component, field penetration causes a global increase in electron density.

A new evaluation method of electron optical performance of high beam current probe forming systems.

PubMed

Fujita, Shin; Shimoyama, Hiroshi

2005-10-01

A new numerical simulation method is presented for the electron optical property analysis of probe forming systems with point cathode guns such as cold field emitters and the Schottky emitters. It has long been recognized that the gun aberrations are important parameters to be considered since the intrinsically high brightness of the point cathode gun is reduced due to its spherical aberration. The simulation method can evaluate the 'threshold beam current I(th)' above which the apparent brightness starts to decrease from the intrinsic value. It is found that the threshold depends on the 'electron gun focal length' as well as on the spherical aberration of the gun. Formulas are presented to estimate the brightness reduction as a function of the beam current. The gun brightness reduction must be included when the probe property (the relation between the beam current l(b) and the probe size on the sample, d) of the entire electron optical column is evaluated. Formulas that explicitly consider the gun aberrations into account are presented. It is shown that the probe property curve consists of three segments in the order of increasing beam current: (i) the constant probe size region, (ii) the brightness limited region where the probe size increases as d approximately I(b)(3/8), and (iii) the angular current intensity limited region in which the beam size increases rapidly as d approximately I(b)(3/2). Some strategies are suggested to increase the threshold beam current and to extend the effective beam current range of the point cathode gun into micro ampere regime.

Gated high speed optical detector

NASA Technical Reports Server (NTRS)

Green, S. I.; Carson, L. M.; Neal, G. W.

1973-01-01

The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

Particle acceleration during merging-compression plasma start-up in the Mega Amp Spherical Tokamak

NASA Astrophysics Data System (ADS)

McClements, K. G.; Allen, J. O.; Chapman, S. C.; Dendy, R. O.; Irvine, S. W. A.; Marshall, O.; Robb, D.; Turnyanskiy, M.; Vann, R. G. L.

2018-02-01

Magnetic reconnection occurred during merging-compression plasma start-up in the Mega Amp Spherical Tokamak (MAST), resulting in the prompt acceleration of substantial numbers of ions and electrons to highly suprathermal energies. Accelerated field-aligned ions (deuterons and protons) were detected using a neutral particle analyser at energies up to about 20 keV during merging in early MAST pulses, while nonthermal electrons have been detected indirectly in more recent pulses through microwave bursts. However no increase in soft x-ray emission was observed until later in the merging phase, by which time strong electron heating had been detected through Thomson scattering measurements. A test-particle code CUEBIT is used to model ion acceleration in the presence of an inductive toroidal electric field with a prescribed spatial profile and temporal evolution based on Hall-MHD simulations of the merging process. The simulations yield particle distributions with properties similar to those observed experimentally, including strong field alignment of the fast ions and the acceleration of protons to higher energies than deuterons. Particle-in-cell modelling of a plasma containing a dilute field-aligned suprathermal electron component suggests that at least some of the microwave bursts can be attributed to the anomalous Doppler instability driven by anisotropic fast electrons, which do not produce measurable enhancements in soft x-ray emission either because they are insufficiently energetic or because the nonthermal bremsstrahlung emissivity during this phase of the pulse is below the detection threshold. There is no evidence of runaway electron acceleration during merging, possibly due to the presence of three-dimensional field perturbations.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Ghosh, R.; Liu, Y.; Lopez, R.

2011-12-01

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E˜6.5×107Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

Comment on ``Scalings for radiation from plasma bubbles'' [Phys. Plasmas 17, 056708 (2010)

NASA Astrophysics Data System (ADS)

Corde, S.; Stordeur, A.; Malka, V.

2011-03-01

Thomas has recently derived scaling laws for x-ray radiation from electrons accelerated in plasma bubbles, as well as a threshold for the self-injection of background electrons into the bubble [A. G. R. Thomas, Phys. Plasmas 17, 056708 (2010)]. To obtain this threshold, the equations of motion for a test electron are studied within the frame of the bubble model, where the bubble is described by prescribed electromagnetic fields and has a perfectly spherical shape. The author affirms that any elliptical trajectory of the form x'2/γp2+y'2=R2 is solution of the equations of motion (in the bubble frame), within the approximation py'2/px'2≪1. In addition, he highlights that his result is different from the work of Kostyukov et al. [Phys. Rev. Lett. 103, 175003 (2009)], and explains the error committed by Kostyukov-Nerush-Pukhov-Seredov (KNPS). In this comment, we show that numerically integrated trajectories, based on the same equations than the analytical work of Thomas, lead to a completely different result for the self-injection threshold, the result published by KNPS [Phys. Rev. Lett. 103, 175003 (2009)]. We explain why the analytical analysis of Thomas fails and we provide a discussion based on numerical simulations which show exactly where the difference arises. We also show that the arguments of Thomas concerning the error of KNPS do not hold, and that their analysis is mathematically correct. Finally, we emphasize that if the KNPS threshold is found not to be verified in PIC (Particle In Cell) simulations or experiments, it is due to a deficiency of the model itself, and not to an error in the mathematical derivation.

The Exchange-Correlation Field Effect over the Magnetoacoustic-Gravitational Instability in Plasmas

NASA Astrophysics Data System (ADS)

Rasheed, A.; Jamil, M.; Jung, Young-Dae; Sahar, A.; Asif, M.

2017-09-01

Jeans instability with magnetosonic perturbations is discussed in quantum dusty magnetoplasmas. The quantum and smaller thermal effects are associated only with electrons. The quantum characteristics include exchange-correlation potential, recoil effect, and Fermi degenerate pressure. The multifluid model of plasmas is used for the analytical study of this problem. The significant contribution of electron exchange is noticed on the threshold value of wave vector and Jeans instability. The presence of electron exchange and correlation effects reduce the time to stabilise the phenomenon of self-gravitational collapse of massive species. The results of Jeans instability by magnetosonic perturbations at quantum scale help to disclose the details of the self-gravitating dusty magnetoplasma systems.

The effect of dynamical Bloch oscillations on optical-field-induced current in a wide-gap dielectric

NASA Astrophysics Data System (ADS)

Földi, P.; Benedict, M. G.; Yakovlev, V. S.

2013-06-01

We consider the motion of charge carriers in a bulk wide-gap dielectric interacting with a few-cycle laser pulse. A semiclassical model based on Bloch equations is applied to describe the emerging time-dependent macroscopic currents for laser intensities close to the damage threshold. At such laser intensities, electrons can reach edges of the first Brillouin zone even for electron-phonon scattering rates as high as those known for SiO2. We find that, whenever this happens, Bragg-like reflections of electron waves, also known as Bloch oscillations, affect the dependence of the charge displaced by the laser pulse on its carrier-envelope phase.

On the relativistic large-angle electron collision operator for runaway avalanches in plasmas

NASA Astrophysics Data System (ADS)

Embréus, O.; Stahl, A.; Fülöp, T.

2018-02-01

Large-angle Coulomb collisions lead to an avalanching generation of runaway electrons in a plasma. We present the first fully conservative large-angle collision operator, derived from the relativistic Boltzmann operator. The relation to previous models for large-angle collisions is investigated, and their validity assessed. We present a form of the generalized collision operator which is suitable for implementation in a numerical kinetic equation solver, and demonstrate the effect on the runaway-electron growth rate. Finally we consider the reverse avalanche effect, where runaways are slowed down by large-angle collisions, and show that the choice of operator is important if the electric field is close to the avalanche threshold.

Bone-anchored Hearing Aids: correlation between pure-tone thresholds and outcome in three user groups.

PubMed

Pfiffner, Flurin; Kompis, Martin; Stieger, Christof

2009-10-01

To investigate correlations between preoperative hearing thresholds and postoperative aided thresholds and speech understanding of users of Bone-anchored Hearing Aids (BAHA). Such correlations may be useful to estimate the postoperative outcome with BAHA from preoperative data. Retrospective case review. Tertiary referral center. : Ninety-two adult unilaterally implanted BAHA users in 3 groups: (A) 24 subjects with a unilateral conductive hearing loss, (B) 38 subjects with a bilateral conductive hearing loss, and (C) 30 subjects with single-sided deafness. Preoperative air-conduction and bone-conduction thresholds and 3-month postoperative aided and unaided sound-field thresholds as well as speech understanding using German 2-digit numbers and monosyllabic words were measured and analyzed. Correlation between preoperative air-conduction and bone-conduction thresholds of the better and of the poorer ear and postoperative aided thresholds as well as correlations between gain in sound-field threshold and gain in speech understanding. Aided postoperative sound-field thresholds correlate best with BC threshold of the better ear (correlation coefficients, r2 = 0.237 to 0.419, p = 0.0006 to 0.0064, depending on the group of subjects). Improvements in sound-field threshold correspond to improvements in speech understanding. When estimating expected postoperative aided sound-field thresholds of BAHA users from preoperative hearing thresholds, the BC threshold of the better ear should be used. For the patient groups considered, speech understanding in quiet can be estimated from the improvement in sound-field thresholds.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

PubMed

Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

2017-05-23

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

The threshold laws for electron-atom and positron-atom impact ionization

NASA Technical Reports Server (NTRS)

Temkin, A.

1983-01-01

The Coulomb-dipole theory is employed to derive a threshold law for the lowest energy needed for the separation of three particles from one another. The study focuses on an electron impinging on a neutral atom, and the dipole is formed between an inner electron and the nucleus. The analytical dependence of the transition matrix element on energy is reduced to lowest order to obtain the threshold law, with the inner electron providing a shield for the nucleus. Experimental results using the LAMPF accelerator to produce a high energy beam of H- ions, which are then exposed to an optical laser beam to detach the negative H- ion, are discussed. The threshold level is found to be confined to the region defined by the upper bound of the inverse square of the Coulomb-dipole region. Difficulties in exact experimental confirmation of the threshold are considered.

Relation of the runaway avalanche threshold to momentum space topology

NASA Astrophysics Data System (ADS)

McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

2018-02-01

The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

Investigating the interaction of x-ray free electron laser radiation with grating structure.

PubMed

Gaudin, Jérôme; Ozkan, Cigdem; Chalupský, Jaromír; Bajt, Saša; Burian, Tomáš; Vyšín, Ludek; Coppola, Nicola; Farahani, Shafagh Dastjani; Chapman, Henry N; Galasso, Germano; Hájková, Vera; Harmand, Marion; Juha, Libor; Jurek, Marek; Loch, Rolf A; Möller, Stefan; Nagasono, Mitsuru; Störmer, Michael; Sinn, Harald; Saksl, Karel; Sobierajski, Ryszard; Schulz, Joachim; Sovak, Pavol; Toleikis, Sven; Tiedtke, Kai; Tschentscher, Thomas; Krzywinski, Jacek

2012-08-01

The interaction of free electron laser pulses with grating structure is investigated using 4.6±0.1 nm radiation at the FLASH facility in Hamburg. For fluences above 63.7±8.7 mJ/cm2, the interaction triggers a damage process starting at the edge of the grating structure as evidenced by optical and atomic force microscopy. Simulations based on solution of the Helmholtz equation demonstrate an enhancement of the electric field intensity distribution at the edge of the grating structure. A procedure is finally deduced to evaluate damage threshold.

On the current drive capability of low dimensional semiconductors: 1D versus 2D

DOE PAGES

Zhu, Y.; Appenzeller, J.

2015-10-29

Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Lastly, our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.

The interference of electronic implants in low frequency electromagnetic fields.

PubMed

Silny, J

2003-04-01

Electronic implants such as cardiac pacemakers or nerve stimulators can be impaired in different ways by amplitude-modulated and even continuous electric or magnetic fields of strong field intensities. For the implant bearer, possible consequences of a temporary electromagnetic interference may range from a harmless impairment of his well-being to a perilous predicament. Electromagnetic interferences in all types of implants cannot be covered here due to their various locations in the body and their different sensing systems. Therefore, this presentation focuses exemplarily on the most frequently used implant, the cardiac pacemaker. In case of an electromagnetic interference the cardiac pacemaker reacts by switching to inhibition mode or to fast asynchronous pacing. At a higher disturbance voltage on the input of the pacemaker, a regular asynchronous pacing is likely to arise. In particular, the first-named interference could be highly dangerous for the pacemaker patient. The interference threshold of cardiac pacemakers depends in a complex way on a number of different factors such as: electromagnetic immunity and adjustment of the pacemaker, the composition of the applied low-frequency fields (only electric or magnetic fields or combinations of both), their frequencies and modulations, the type of pacemaker system (bipolar, unipolar) and its location in the body, as well as the body size and orientation in the field, and last but not least, certain physiological conditions of the patient (e.g. inhalation, exhalation). In extensive laboratory studies we have investigated the interference mechanisms in more than 100 cardiac pacemakers (older types as well as current models) and the resulting worst-case conditions for pacemaker patients in low-frequency electric and magnetic fields. The verification of these results in different practical everyday-life situations, e.g. in the fields of high-voltage overhead lines or those of electronic article surveillance systems is currently in progress. In case of the vertically-oriented electric 50 Hz fields preliminary results show that per 1 kV/m unimpaired electrical field strength (rms) an interference voltage of about 400 microVpp as worst-case could occur at the input of a unipolar ventricularly controlled, left-pectorally implanted cardiac pacemaker. Thus, already a field strength above ca. 5 kV/m could cause an interference with an implanted pacemaker. The magnetic fields induces an electric disturbance voltage at the input of the pacemaker. The body and the pacemaker system compose several induction loops, whose induced voltages rates add or subtract. The effective area of one representing inductive loop ranges from 100 to 221 cm2. For the unfavourable left-pectorally implantated and atrially-controlled pacemaker with a low interference threshold, the interference threshold ranges between 552 and 16 microT (rms) for magnetic fields at frequencies between 10 and 250 Hz. On this basis the occurrence of interferences with implanted pacemakers is possible in everyday-life situations. But experiments demonstrate a low probability of interference of cardiac pacemakers in practical situations. This apparent contradiction can be explained by a very small band of inhibition in most pacemakers and, in comparison with the worst-case, deviating conditions.

Single-electron pulses for ultrafast diffraction

PubMed Central

Aidelsburger, M.; Kirchner, F. O.; Krausz, F.; Baum, P.

2010-01-01

Visualization of atomic-scale structural motion by ultrafast electron diffraction and microscopy requires electron packets of shortest duration and highest coherence. We report on the generation and application of single-electron pulses for this purpose. Photoelectric emission from metal surfaces is studied with tunable ultraviolet pulses in the femtosecond regime. The bandwidth, efficiency, coherence, and electron pulse duration are investigated in dependence on excitation wavelength, intensity, and laser bandwidth. At photon energies close to the cathode’s work function, the electron pulse duration shortens significantly and approaches a threshold that is determined by interplay of the optical pulse width and the acceleration field. An optimized choice of laser wavelength and bandwidth results in sub-100-fs electron pulses. We demonstrate single-electron diffraction from polycrystalline diamond films and reveal the favorable influences of matched photon energies on the coherence volume of single-electron wave packets. We discuss the consequences of our findings for the physics of the photoelectric effect and for applications of single-electron pulses in ultrafast 4D imaging of structural dynamics. PMID:21041681

Mirror symmetry of ions and electron temperature variations within the dusty dynamo layer of the auroral ionosphere

NASA Astrophysics Data System (ADS)

Timofeev, Evgeny; Kangas, Jorma; Vallinkoski, Matti

Quasi-periodic (consisting of a dozen electro-thermal structures, ETS) variations of ionospheric parameters during April, 10 and March, 23 1988 substorms were investigated using the data of EISCAT radars in Tromso. These variations were measured at the lower edge of dynamo-layer 106 km and include the ion and electron temperature, electron density and ionospheric electric field; all data were smoothed out using moving average with optimal lag window. It was shown that: 1) ETS clusters are observed when value of the electric field is < 10 mV/m and average electron density is about (5-10)*10 (4) /sm (3) , 2) For each ETS the envelop demonstrate the so called mirror symmetry, that is antiphased variations of the ion and electron temperature (when Ti increases and Te decreases), 3) The symmetry breaks when the electric field is larger than FB instability threshold (15-20 mVm), 4) The periods of these variations is in the range of 3-10 min, 5) The self-similarity of the scales is observed: smaller scales are included into the larger scales, 6) Temperature variations were accompanied by the electric field variations with amplitude of 4-7 mV/m, 7) Large scale structures (and sometimes dyads formed by two subsequent structures) were accompanied by the electric field rotation up to the whole circle. Specific ETS and plasma parameters variations can be interpreted as a result of Ekman-type instability in the dusty plasma of the dynamo layer. The mirror symmetry of plasma temperature variations is an evidence of a partial blocking of energy transfer between the ions and electrons at low values of the external electric field (below FB instability threshold) because the main energy in such a kind of plasma is attributed to dusty macro-particles (Fortov et al., 2010). Under these conditions the time scale of the dust particle energy variations are considerably larger than the corresponding scales of the temperature variations. According to our previous results (Timofeev et al, 2009-2013) the coherent increase of correlation coefficient (CC) of plasma temperature time variations and smoothed value of the electric field means that the CC can be used as an indicator of the ETS "rigidity" (hence the energy and charge of macro-particles). We used this coherence to estimate the time scale of the macro-particles energy growth (during preliminary phase of March 23, 1988 substorm) and get values of 12-19 min. In the present study we used the same event to estimate the time scale of the plasma temperatures mirror variations and obtained that they are at least 2-3 times shorter. Such a difference in the time scale determines the ETS formation. Finally, after FB instability excitation the electrons can quickly exchange their energy with plasmons, so that the mirror symmetry in temperature variations breaks down.

Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Jong Beom; Lee, Dong Ryeol

2018-04-01

We studied the effect of the addition of free hole- and electron-rich organic molecules to organic semiconductors (OSCs) in organic field effect transistors (OFETs) on the gate voltage-dependent mobility. The drain current versus gate voltage characteristics were quantitatively analyzed using an OFET mobility model of power law behavior based on hopping transport in an OSC. This analysis distinguished the threshold voltage shifts, depending on the materials and structures of the OFET device, and properly estimated the hopping transport of the charge carriers induced by the gate bias within the OSC from the power law exponent parameter. The addition of pentacene or C60 molecules to a one-monolayer pentacene-based OFET shifted the threshold voltages negatively or positively, respectively, due to the structural changes that occurred in the OFET device. On the other hand, the power law parameters revealed that the addition of charge carriers of the same or opposite polarity enhanced or hindered hopping transport, respectively. This study revealed the need for a quantitative analysis of the gate voltage-dependent mobility while distinguishing this effect from the threshold voltage effect in order to understand OSC hopping transport in OFETs.

Role of extrinsic noise in the sensitivity of the rod pathway: rapid dark adaptation of nocturnal vision in humans.

PubMed

Reeves, Adam; Grayhem, Rebecca

2016-03-01

Rod-mediated 500 nm test spots were flashed in Maxwellian view at 5 deg eccentricity, both on steady 10.4 deg fields of intensities (I) from 0.00001 to 1.0 scotopic troland (sc td) and from 0.2 s to 1 s after extinguishing the field. On dim fields, thresholds of tiny (5') tests were proportional to √I (Rose-DeVries law), while thresholds after extinction fell within 0.6 s to the fully dark-adapted absolute threshold. Thresholds of large (1.3 deg) tests were proportional to I (Weber law) and extinction thresholds, to √I. rod thresholds are elevated by photon-driven noise from dim fields that disappears at field extinction; large spot thresholds are additionally elevated by neural light adaptation proportional to √I. At night, recovery from dimly lit fields is fast, not slow.

On ionizing shock waves

NASA Astrophysics Data System (ADS)

Kaniel, A.; Igra, O.; Ben-Dor, G.; Mond, M.

The flow field in the ionizing relaxation zone developed behind a normal shock wave in an electrically neutral, homogeneous, two temperature mixture of thermally ideal gases (molecules, atoms, ions, electrons) was numerically solved. The heat transfer between the electron gas and the other components was taken into account while all the other transport phenomena (molecular, turbulent and radiative) were neglected in the relaxation zone, since it is dominated by inelastic collisions. The threshold cross sections measured by Specht (1981), for excitation of argon by electron collisions, were used. The calculated results show good agreement with the results of the shock tube experiments presented by Glass and Liu (1978), especially in the electron avalanche region. A critical examination was made of the common assumptions regarding the average energy with which electrons are produced by atom-atom collisions and the relative effectiveness of atom-atom collisions (versus electron-atom collisions) in ionizing excited argon.

Transition-matrix theory for two-photon ionization of rare-gas atoms and isoelectronic ions with application to argon

NASA Astrophysics Data System (ADS)

Starace, Anthony F.; Jiang, Tsin-Fu

1987-08-01

A transition-matrix theory for two-photon ionization processes in rare-gas atoms or isoelectronic ions is presented. Uncoupled ordinary differential equations are obtained for the radial functions needed to calculate the two-photon transition amplitude. The implications of these equations are discussed in detail. In particular, the role of correlations involving virtually excited electron pairs, which are known to be essential to the description of single-photon processes, is examined for multiphoton ionization processes. Additionally, electron scattering interactions between two electron-hole pairs are introduced into our transition amplitude in the boson approximation since these have been found important in two-photon ionization of xenon by L'Huillier and Wendin [J. Phys. B 20, L37 (1987)]. Application of our theory is made to two-photon ionization of the 3p subshell of argon below the one-photon ionization threshold. Our results are compared to previous calculations of McGuire [Phys. Rev. A 24, 835 (1981)], of Moccia, Rahman, and Rizzo [J. Phys. B 16, 2737 (1983)], and of Pindzola and Kelly [Phys. Rev. A 11, 1543 (1975)]. Results are presented for both circularly and linearly polarized photons. Among our findings are, firstly, that the electron scattering interactions, which have not been included in previous calculations for argon, produce a substantial reduction in the two-photon single-ionization cross section below the one-photon ionization threshold, which is in agreement with findings of L'Huillier and Wendin for xenon. Secondly, we find that de-excitation of virtually excited electron pairs by absorption of a photon is important for describing the interaction of the atom with the photon field, as in the case of single-photon ionization processes, but that further excitation of virtually excited electron pairs by the photon field has completely negligible effects, indicating a major simplification of the theory for higher-order absorption processes.

Tunnelling magnetoresistance and 1/f noise in phase-separated manganites

NASA Astrophysics Data System (ADS)

Sboychakov, A. O.; Rakhmanov, A. L.; Kugel, K. I.; Kagan, M. Yu; Brodsky, I. V.

2003-03-01

The magnetoresistance and the noise power of non-metallic phase-separated manganites are studied. The material is modelled by a system of small ferromagnetic metallic droplets (magnetic polarons or ferrons) in an insulating matrix. The concentration of metallic phase is assumed to be far from the percolation threshold. The electron tunnelling between ferrons causes the charge transfer in such a system. The magnetoresistance is determined both by the increase in the volume of the metallic phase and by the change in the electron hopping probability. In the framework of such a model, the low-field magnetoresistance is proportional to H2 and decreases with temperature as T-n, where n can vary from 1 to 5, depending on the parameters of the system. In the high-field limit, the tunnelling magnetoresistance grows exponentially. Different mechanisms of the voltage fluctuations in the system are analysed. The noise spectrum generated by the fluctuations of the number of droplets with extra electrons has a 1/f form over a wide frequency range. In the case of strong magnetic anisotropy, the 1/f noise can also arise due to fluctuations of the magnetic moments of ferrons. The 1/f noise power depends only slightly on the magnetic field in the low field range whereas it can increase as H6 in the high-field limit.

Artificial optical emissions in the thermosphere induced by powerful radio waves: A review

NASA Astrophysics Data System (ADS)

Kosch, M.; Senior, A.; Gustavsson, B.; Grach, S.; Pedersen, T.; Rietveld, M.

High-power high-frequency radio waves beamed into the ionosphere with O-mode polarization cause plasma turbulence which can accelerate electrons These electrons collide with the F-layer neutrals causing artificial optical emissions identical to natural aurora The brightest optical emissions are O 1D 630 nm with a threshold of 2 eV and O 1S 557 7 nm with a threshold of 4 2 eV The optical emissions give direct evidence of electron acceleration by plasma turbulence as well as their non-Maxwellian energy spectrum HF pumping of the ionosphere also causes electron temperature enhancements but these alone are not sufficient to explain the optical emissions EISCAT plasma-line measurements indicate that the enhanced electron temperatures are consistent with the bulk of the electrons having a Maxwellian energy spectrum Novel discoveries include 1 Very large electron temperature enhancements of several 1000 K which maximise along the magnetic field line direction 2 Ion temperature enhancements of a few 100 K 3 Large ion outflows exceeding 200 m s 4 The F-layer optical emission maximizes sharply near the magnetic zenith with clear evidence of self-focusing 5 The optical emission generally appears below the HF pump reflection altitude as well as the upper-hybrid resonance height 6 The optical emission and HF coherent radar backscatter generally minimize when pumping on the third or higher electron gyro-harmonic frequency suggesting upper-hybrid waves as the primary mechanism 7 The optical emissions and HF coherent backscatter are enhanced on the

Theory and Device Modeling for Nano-Structured Transistor Channels

DTIC Science & Technology

2011-06-01

zinc oxide ( ZnO ) thin film transistors ( TFTs ) that contain nanocrystalline grains on the order of ~20nm. The authors of ref. 1 present results...problem in order to determine the threshold voltage. 15. SUBJECT TERMS nano-structured transistor , mesoscopic, zinc oxide , ZnO , field-effect...and R. Neidhard, “Microwave ZnO Thin - Film Transistors ”, IEEE Electron Dev. Lett. 29, 1024 (2008); doi: 10.1109/LED.2008.2001635.

Processing Of Binary Images

NASA Astrophysics Data System (ADS)

Hou, H. S.

1985-07-01

An overview of the recent progress in the area of digital processing of binary images in the context of document processing is presented here. The topics covered include input scan, adaptive thresholding, halftoning, scaling and resolution conversion, data compression, character recognition, electronic mail, digital typography, and output scan. Emphasis has been placed on illustrating the basic principles rather than descriptions of a particular system. Recent technology advances and research in this field are also mentioned.

Nanojets, Electrospray, and Ion Field Evaporation: Molecular Dynamics Simulations and Laboratory Experiments

DTIC Science & Technology

2008-07-22

electron- impact ionization source. The intensities of fragmented ions of FC-43 were measured for all investigated quadrupole transmission energies ...to the Taylor cone. This finding is consistent with the experimental energy distributions of the solvated ions which demonstrate that indeed most...case of salt solutions the concentration is low. The threshold value E\\ derives from the energy to overcome the barrier associated with the

Above-threshold ionization of noble gases in elliptically polarized fields: Effects of atomic polarization on photoelectron angular distributions

NASA Astrophysics Data System (ADS)

Wang, YanLan; Yu, ShaoGang; Lai, XuanYang; Liu, XiaoJun; Chen, Jing

2017-06-01

We theoretically investigate the atomic polarization effect on photoelectron angular distributions (PADs) in above-threshold ionization of noble gases with elliptically polarized laser fields at wavelength of 800 nm, ellipticity of 0.25, and intensity of 1.5 ×1014W/cm2 . Simulations based on a semiclassical model that includes both the ionic Coulomb potential and the atomic polarization effect show surprisingly little difference between PADs for Ar, Kr, and Xe, which is in good agreement with recent experimental observations. Our calculations reveal that the atomic polarization effect increases the distance of the tunnel exit point of the photoelectron to the parent ion and weakens the strength of the interaction between the parent ion and the photoelectron on its subsequent classical propagation. As a result, the forward-scattering electrons which contribute to the main lobes in PADs are substantially suppressed. Our results indicate that the insensitivity of PADs for Ar, Kr, and Xe may be closely related to the influence of the atomic polarization effect on the photoelectron dynamics in the strong laser field.

Evaluation of runaway-electron effects on plasma-facing components for NET

NASA Astrophysics Data System (ADS)

Bolt, H.; Calén, H.

1991-03-01

Runaway electrons which are generated during disruptions can cause serious damage to plasma facing components in a next generation device like NET. A study was performed to quantify the response of NET plasma facing components to runaway-electron impact. For the determination of the energy deposition in the component materials Monte Carlo computations were performed. Since the subsurface metal structures can be strongly heated under runaway-electron impact from the computed results damage threshold values for the thermal excursions were derived. These damage thresholds are strongly dependent on the materials selection and the component design. For a carbonmolybdenum divertor with 10 and 20 mm carbon armour thickness and 1 degree electron incidence the damage thresholds are 100 MJ/m 2 and 220 MJ/m 2. The thresholds for a carbon-copper divertor under the same conditions are about 50% lower. On the first wall damage is anticipated for energy depositions above 180 MJ/m 2.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

NASA Astrophysics Data System (ADS)

Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

2017-09-01

In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

In situ disordering of monoclinic titanium monoxide Ti5O5 studied by transmission electron microscope TEM.

PubMed

Rempel, А А; Van Renterghem, W; Valeeva, А А; Verwerft, M; Van den Berghe, S

2017-09-07

The superlattice and domain structures exhibited by ordered titanium monoxide Ti 5 O 5 are disrupted by low energy electron beam irradiation. The effect is attributed to the disordering of the oxygen and titanium sublattices. This disordering is caused by the displacement of both oxygen and titanium atoms by the incident electrons and results in a phase transformation of the monoclinic phase Ti 5 O 5 into cubic B1 titanium monoxide. In order to determine the energies required for the displacement of titanium or oxygen atoms, i.e. threshold displacement energies, a systematic study of the disappearance of superstructure reflections with increasing electron energy and electron bombardment dose has been performed in situ in a transmission electron microscope (TEM). An incident electron energy threshold between 120 and 140 keV has been observed. This threshold can be ascribed to the displacements of titanium atoms with 4 as well as with 5 oxygen atoms as nearest neighbors. The displacement threshold energy of titanium atoms in Ti 5 O 5 corresponding with the observed incident electron threshold energy lies between 6.0 and 7.5 eV. This surprisingly low value can be explained by the presence of either one or two vacant oxygen lattice sites in the nearest neighbors of all titanium atoms.

A strategy to minimize the energy offset in carrier injection from excited dyes to inorganic semiconductors for efficient dye-sensitized solar energy conversion.

PubMed

Fujisawa, Jun-Ichi; Osawa, Ayumi; Hanaya, Minoru

2016-08-10

Photoinduced carrier injection from dyes to inorganic semiconductors is a crucial process in various dye-sensitized solar energy conversions such as photovoltaics and photocatalysis. It has been reported that an energy offset larger than 0.2-0.3 eV (threshold value) is required for efficient electron injection from excited dyes to metal-oxide semiconductors such as titanium dioxide (TiO2). Because the energy offset directly causes loss in the potential of injected electrons, it is a crucial issue to minimize the energy offset for efficient solar energy conversions. However, a fundamental understanding of the energy offset, especially the threshold value, has not been obtained yet. In this paper, we report the origin of the threshold value of the energy offset, solving the long-standing questions of why such a large energy offset is necessary for the electron injection and which factors govern the threshold value, and suggest a strategy to minimize the threshold value. The threshold value is determined by the sum of two reorganization energies in one-electron reduction of semiconductors and typically-used donor-acceptor (D-A) dyes. In fact, the estimated values (0.21-0.31 eV) for several D-A dyes are in good agreement with the threshold value, supporting our conclusion. In addition, our results reveal that the threshold value is possible to be reduced by enlarging the π-conjugated system of the acceptor moiety in dyes and enhancing its structural rigidity. Furthermore, we extend the analysis to hole injection from excited dyes to semiconductors. In this case, the threshold value is given by the sum of two reorganization energies in one-electron oxidation of semiconductors and D-A dyes.

Relation of the runaway avalanche threshold to momentum space topology

DOE PAGES

McDevitt, Christopher J.; Guo, Zehua; Tang, Xian -Zhu

2018-01-05

Here, the underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accuratelymore » described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.« less

Relation of the runaway avalanche threshold to momentum space topology

DOE Office of Scientific and Technical Information (OSTI.GOV)

McDevitt, Christopher J.; Guo, Zehua; Tang, Xian -Zhu

Here, the underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accuratelymore » described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.« less

How the laser-induced ionization of transparent solids can be suppressed

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2013-12-01

A capability to suppress laser-induced ionization of dielectric crystals in controlled and predictable way can potentially result in substantial improvement of laser damage threshold of optical materials. The traditional models that employ the Keldysh formula do not predict any suppression of the ionization because of the oversimplified description of electronic energy bands underlying the Keldysh formula. To fix this gap, we performed numerical simulations of time evolution of conduction-band electron density for a realistic cosine model of electronic bands characteristic of wide-band-gap cubic crystals. The simulations include contributions from the photo-ionization (evaluated by the Keldysh formula and by the formula for the cosine band of volume-centered cubic crystals) and from the avalanche ionization (evaluated by the Drude model). Maximum conduction-band electron density is evaluated from a single rate equation as a function of peak intensity of femtosecond laser pulses for alkali halide crystals. Results obtained for high-intensity femtosecond laser pulses demonstrate that the ionization can be suppressed by proper choice of laser parameters. In case of the Keldysh formula, the peak electron density exhibits saturation followed by gradual increase. For the cosine band, the electron density increases with irradiance within the low-intensity multiphoton regime and switches to decrease with intensity approaching threshold of the strong singularity of the ionization rate characteristic of the cosine band. Those trends are explained with specific modifications of band structure by electric field of laser pulses.

Feature-based attention potentiates recovery of fine direction discrimination in cortically blind patients.

PubMed

Cavanaugh, Matthew R; Barbot, Antoine; Carrasco, Marisa; Huxlin, Krystel R

2017-12-10

Training chronic, cortically-blind (CB) patients on a coarse [left-right] direction discrimination and integration (CDDI) task recovers performance on this task at trained, blind field locations. However, fine direction difference (FDD) thresholds remain elevated at these locations, limiting the usefulness of recovered vision in daily life. Here, we asked if this FDD impairment can be overcome by training CB subjects with endogenous, feature-based attention (FBA) cues. Ten CB subjects were recruited and trained on CDDI and FDD with an FBA cue or FDD with a neutral cue. After completion of each training protocol, FDD thresholds were re-measured with both neutral and FBA cues at trained, blind-field locations and at corresponding, intact-field locations. In intact portions of the visual field, FDD thresholds were lower when tested with FBA than neutral cues. Training subjects in the blind field on the CDDI task improved FDD performance to the point that a threshold could be measured, but these locations remained impaired relative to the intact field. FDD training with neutral cues resulted in better blind field FDD thresholds than CDDI training, but thresholds remained impaired relative to intact field levels, regardless of testing cue condition. Importantly, training FDD in the blind field with FBA lowered FDD thresholds relative to CDDI training, and allowed the blind field to reach thresholds similar to the intact field, even when FBA trained subjects were tested with a neutral rather than FBA cue. Finally, FDD training appeared to also recover normal integration thresholds at trained, blind-field locations, providing an interesting double dissociation with respect to CDDI training. In summary, mechanisms governing FBA appear to function normally in both intact and impaired regions of the visual field following V1 damage. Our results mark the first time that FDD thresholds in CB fields have been seen to reach intact field levels of performance. Moreover, FBA can be leveraged during visual training to recover normal, fine direction discrimination and integration performance at trained, blind-field locations, potentiating visual recovery of more complex and precise aspects of motion perception in cortically-blinded fields. Copyright © 2017 Elsevier Ltd. All rights reserved.

Magnetic-field-driven electron transport in ferromagnetic/ insulator/semiconductor hybrid structures

NASA Astrophysics Data System (ADS)

Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Varnakov, S. N.; Ovchinnikov, S. G.

2017-10-01

Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 106% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 104% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application

NASA Astrophysics Data System (ADS)

Ho, Ching-Yuan; Chang, Yaw-Jen

2016-02-01

Both aluminum (Al) and copper (Cu), acting as transmission lines in the hydrogenated amorphous silicon of a thin film transistor (a-Si:H TFT), were studied to investigate electrical degradation including electron-migration (EM) and threshold voltage (Vt) stability and recovery performance. Under long-term current stress, the Cu material exhibited excellent resistance to EM properties, but a passivated SiNx crack was observed due to fast heat conductivity. By applying electrical stress on the gate and drain for 5 × 104 s, the power-law time dependency of the threshold voltage shift (ΔVt) indicated that the defective state creation dominated the TFT device's instability. The presence of drain stress increased the overall ΔVt because the high longitudinal field induced impact ionization and then, enhanced hot-carrier-induced electron trapping within the gate SiNx dielectric. An annealing effect prompted a stressed a-Si:H TFT back to virgin status. This study proposes better ΔVt stability and excellent resistance against electron-migration in a Cu gate device which can be considered as a candidate for a transmission line on prolonged TFT applications.

Internal Charging Design Environments for the Earths Radiation Belts

NASA Technical Reports Server (NTRS)

Minow, Joseph I.; Edwards, David L.

2009-01-01

Relativistic electrons in the Earth's radiation belts are a widely recognized threat to spacecraft because they penetrate lightly shielded vehicle hulls and deep into insulating materials where they accumulate to sufficient levels to produce electrostatic discharges. Strategies for evaluating the magnitude of the relativistic electron flux environment and its potential for producing ESD events are varied. Simple "rule of thumb" estimates such as the widely used 10(exp 10) e-/sq cm fluence within 10 hour threshold for the onset of pulsing in dielectric materials provide a quick estimate of when to expect charging issues. More sophisticated strategies based on models of the trapped electron flux within the Earth s magnetic field provide time dependent estimates of electron flux along spacecraft orbits and orbit integrate electron flux. Finally, measurements of electron flux can be used to demonstrate mean and extreme relativistic electron environments. This presentation will evaluate strategies used to specify energetic electron flux and fluence environments along spacecraft trajectories in the Earth s radiation belts.

Optical ranked-order filtering using threshold decomposition

DOEpatents

Allebach, Jan P.; Ochoa, Ellen; Sweeney, Donald W.

1990-01-01

A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed.

Gamma ray pulsars. [electron-photon cascades

NASA Technical Reports Server (NTRS)

Oegelman, H.; Ayasli, S.; Hacinliyan, A.

1977-01-01

Data from the SAS-2 high-energy gamma-ray experiment reveal the existence of four pulsars emitting photons above 35 MeV. An attempt is made to explain the gamma-ray emission from these pulsars in terms of an electron-photon cascade that develops in the magnetosphere of the pulsar. Although there is very little material above the surface of the pulsar, the very intense magnetic fields (10 to the 12th power gauss) correspond to many radiation lengths which cause electrons to emit photons by magnetic bremsstrahlung and which cause these photons to pair-produce. The cascade develops until the mean photon energy drops below the pair-production threshold which is in the gamma-ray range; at this stage, the photons break out from the source.

Electromagnetic Waves and Bursty Electron Acceleration: Implications from Freja

NASA Technical Reports Server (NTRS)

Andersson, Laila; Ivchenko, N.; Wahlund, J.-E.; Clemmons, J.; Gustavsson, B.; Eliasson, L.

2000-01-01

Dispersive Alfven wave activity is identified in four dayside auroral oval events measured by the Freja satellite. The events are characterized by ion injection, bursty electron precipitation below about I keV, transverse ion heating and broadband extremely low frequency (ELF) emissions below the lower hybrid cutoff frequency (a few kHz). The broadband emissions are observed to become more electrostatic towards higher frequencies. Large-scale density depletions/cavities, as determined by the Langmuir probe measurements, and strong electrostatic emissions are often observed simultaneously. A correlation study has been carried out between the E- and B-field fluctuations below 64 Hz (the dc instrument's upper threshold) and the characteristics of the precipitating electrons. This study revealed that the energization of electrons is indeed related to the broadband ELF emissions and that the electrostatic component plays a predominant role during very active magnetospheric conditions. Furthermore, the effect of the ELF electromagnetic emissions on the larger scale field-aligned current systems has been investigated, and it is found that such an effect cannot be detected. Instead, the Alfvenic activity creates a local region of field-aligned currents. It is suggested that dispersive Alfven waves set up these local field-aligned current regions and in turn trigger more electrostatic emissions during certain conditions. In these regions ions are transversely heated, and large-scale density depletions/cavities may be created during especially active periods.

Single-shot velocity-map imaging of attosecond light-field control at kilohertz rate.

PubMed

Süssmann, F; Zherebtsov, S; Plenge, J; Johnson, Nora G; Kübel, M; Sayler, A M; Mondes, V; Graf, C; Rühl, E; Paulus, G G; Schmischke, D; Swrschek, P; Kling, M F

2011-09-01

High-speed, single-shot velocity-map imaging (VMI) is combined with carrier-envelope phase (CEP) tagging by a single-shot stereographic above-threshold ionization (ATI) phase-meter. The experimental setup provides a versatile tool for angle-resolved studies of the attosecond control of electrons in atoms, molecules, and nanostructures. Single-shot VMI at kHz repetition rate is realized with a highly sensitive megapixel complementary metal-oxide semiconductor camera omitting the need for additional image intensifiers. The developed camera software allows for efficient background suppression and the storage of up to 1024 events for each image in real time. The approach is demonstrated by measuring the CEP-dependence of the electron emission from ATI of Xe in strong (≈10(13) W/cm(2)) near single-cycle (4 fs) laser fields. Efficient background signal suppression with the system is illustrated for the electron emission from SiO(2) nanospheres. © 2011 American Institute of Physics

CORRELATIONS IN LIGHT FROM A LASER AT THRESHOLD,

DTIC Science & Technology

Temporal correlations in the electromagnetic field radiated by a laser in the threshold region of oscillation (from one tenth of threshold intensity...to ten times threshold ) were measured by photoelectron counting techniques. The experimental results were compared with theoretical predictions based...shows that the intensity fluctuations at about one tenth threshold are nearly those of a Gaussian field and continuously approach those of a constant amplitude field as the intensity is increased. (Author)

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Chen, Jian-Liang; Chen, Chien-Ming; Chen, Chii-Wen; Cheng, Ching-Hwa; Chiu, Hsien-Chin

2017-11-01

In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application. The new SGORSD structure could obtain a low electric field at channel near the drain side owing to a step GOLDD design. Compared to the conventional device, the SGORSD TFT exhibits a better kink effect and higher breakdown performance due to the reduced drain electric field (D-EF). In addition, the leakage current also can be suppressed. Moreover, the device stability, such as the threshold voltage shift and drain current degradation under a high gate bias, is improved by the design of SGORSD structure. Therefore, this novel step GOLDD structure can be a promising design to be used in active-matrix flat panel electronics.

Simulation study on nitrogen vibrational and translational temperature in air breakdown plasma generated by 110 GHz focused microwave pulse

NASA Astrophysics Data System (ADS)

Yang, Wei; Zhou, Qianhong; Dong, Zhiwei

2017-01-01

We report a simulation study on nitrogen vibrational and translational temperature in 3 μs pulse 110 GHz microwave air breakdown at pressure from 1 Torr to 100 Torr. The one-dimensional model is based on a self-consistent solution to Helmholtz equation for microwave field, electron density equation, and the average energy equation for electrons, nitrogen vibrational, and translational degrees. The breakdown threshold is calculated from the transmitted microwave profile, and it agrees well with that from experiment. The spatio-temporal characteristics of vibrational and translational temperature are shown, and the peak values at the end of pulse are compared to the results fitted from optical emission spectroscopy. The dependences of vibrational and translational temperature on normalized microwave fields and gas pressure are investigated, and the underlying mechanisms are unveiled.

Observations of a fast transverse instability in the PSR

NASA Astrophysics Data System (ADS)

Neuffer, D.; Colton, E.; Fitzgerald, D.; Hardek, T.; Hutson, R.; Macek, R.; Plum, M.; Thiessen, H.; Wang, T.-S.

1992-09-01

A fast instability with beam loss is observed in the Los Alamos Proton Storage Ring (PSR) when the injected beam current exceeds a threshold value, with both bunched and unbunched beams. Large coherent transverse oscillations occur prior to and during beam loss. The threshold depends strongly on rf voltage, beam-pulse shape, beam size, nonlinear fields, and beam environmental. Results of recent observations of the instability are reported; possible causes of the instability are discussed. Recent measurements and calculations indicate that the instability is an "e-p"-type instability, driven by coupled oscillations with electrons trapped within the proton beam. Future experiments toward further understanding of the instability are discussed, and methods of increasing PSR beam storage are suggested.

Interplanetary Parameters Leading to Relativistic Electron Enhancement and Persistent Depletion Events at Geosynchronous Orbit and Potential for Prediction

NASA Astrophysics Data System (ADS)

Pinto, Victor A.; Kim, Hee-Jeong; Lyons, Larry R.; Bortnik, Jacob

2018-02-01

We have identified 61 relativistic electron enhancement events and 21 relativistic electron persistent depletion events during 1996 to 2006 from the Geostationary Operational Environmental Satellite (GOES) 8 and 10 using data from the Energetic Particle Sensor (EPS) >2 MeV fluxes. We then performed a superposed epoch time analysis of the events to find the characteristic solar wind parameters that determine the occurrence of such events, using the OMNI database. We found that there are clear differences between the enhancement events and the persistent depletion events, and we used these to establish a set of threshold values in solar wind speed, proton density and interplanetary magnetic field (IMF) Bz that can potentially be useful to predict sudden increases in flux. Persistent depletion events are characterized by a low solar wind speed, a sudden increase in proton density that remains elevated for a few days, and a northward turning of IMF Bz shortly after the depletion starts. We have also found that all relativistic electron enhancement or persistent depletion events occur when some geomagnetic disturbance is present, either a coronal mass ejection or a corotational interaction region; however, the storm index, SYM-H, does not show a strong connection with relativistic electron enhancement events or persistent depletion events. We have tested a simple threshold method for predictability of relativistic electron enhancement events using data from GOES 11 for the years 2007-2010 and found that around 90% of large increases in electron fluxes can be identified with this method.

Two-Electron Correlations in e+H-->e+e+p Near Threshold

NASA Astrophysics Data System (ADS)

Kato, Daiji; Watanabe, Shinichi

1995-03-01

We present an ab initio calculation of the ionization cross section of atomic hydrogen near threshold with precision that compares excellently with the Shah-Elliot-Gilbody experiment [J. Phys. B 20, 3501 (1987)]. This fills the gap between theory and experiment down to 0.1 a.u. above threshold, complementing the recent spectacular work of Bray and Stelbovics [Phys. Rev. Lett. 70, 746 (1993)]. The angular momentum distributions of the secondary electron display an evolution in correlation patterns toward the threshold.

Coulomb-repulsion-assisted double ionization from doubly excited states of argon

NASA Astrophysics Data System (ADS)

Liao, Qing; Winney, Alexander H.; Lee, Suk Kyoung; Lin, Yun Fei; Adhikari, Pradip; Li, Wen

2017-08-01

We report a combined experimental and theoretical study to elucidate nonsequential double-ionization dynamics of argon atoms at laser intensities near and below the recollision-induced ionization threshold. Three-dimensional momentum measurements of two electrons arising from strong-field nonsequential double ionization are achieved with a custom-built electron-electron-ion coincidence apparatus, showing laser intensity-dependent Coulomb repulsion effect between the two outgoing electrons. Furthermore, a previously predicted feature of double ionization from doubly excited states is confirmed in the distributions of sum of two-electron momenta. A classical ensemble simulation suggests that Coulomb-repulsion-assisted double ionization from doubly excited states is at play at low laser intensity. This mechanism can explain the dependence of Coulomb repulsion effect on the laser intensity, as well as the transition from side-by-side to back-to-back dominant emission along the laser polarization direction.

Stability of an emittance-dominated sheet-electron beam in planar wiggler and periodic permanent magnet structures with natural focusing

NASA Astrophysics Data System (ADS)

Carlsten, B. E.; Earley, L. M.; Krawczyk, F. L.; Russell, S. J.; Potter, J. M.; Ferguson, P.; Humphries, S.

2005-06-01

A sheet-beam traveling-wave amplifier has been proposed as a high-power generator of rf from 95 to 300 GHz, using a microfabricated rf slow-wave structure [Carlsten et al., IEEE Trans. Plasma Sci. 33, 85 (2005), ITPSBD, 0093-3813, 10.1109/TPS.2004.841172], for emerging radar and communications applications. The planar geometry of microfabrication technologies matches well with the nearly planar geometry of a sheet beam, and the greater allowable beam current leads to high-peak power, high-average power, and wide bandwidths. Simulations of nominal designs using a vane-loaded waveguide as the slow-wave structure have indicated gains in excess of 1 dB/mm, with extraction efficiencies greater than 20% at 95 GHz with a 120-kV, 20-A electron beam. We have identified stable sheet-beam formation and transport as the key enabling technology for this type of device. In this paper, we describe sheet-beam transport, for both wiggler and periodic permanent magnet (PPM) magnetic field configurations, with natural (or single-plane) focusing. For emittance-dominated transport, the transverse equation of motion reduces to a Mathieu equation, and to a modified Mathieu equation for a space-charge dominated beam. The space-charge dominated beam has less beam envelope ripple than an emittance-dominated beam, but they have similar stability thresholds (defined by where the beam ripple continues to grow without bound along the transport line), consistent with the threshold predicted by the Mathieu equation. Design limits are derived for an emittance-dominated beam based on the Mathieu stability threshold. The increased beam envelope ripple for emittance-dominated transport may impact these design limits, for some transport requirements. The stability of transport in a wiggler field is additionally compromised by the beam’s increased transverse motion. Stable sheet-beam transport with natural focusing is shown to be achievable for a 120-kV, 20-A, elliptical beam with a cross section of 1 cm by 0.5 mm, with both a PPM and a wiggler field, with magnetic field amplitude of about 2.5 kG.

Quantum dynamics of charge state in silicon field evaporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silaeva, Elena P.; Uchida, Kazuki; Watanabe, Kazuyuki, E-mail: kazuyuki@rs.kagu.tus.ac.jp

2016-08-15

The charge state of an ion field-evaporating from a silicon-atom cluster is analyzed using time-dependent density functional theory coupled to molecular dynamics. The final charge state of the ion is shown to increase gradually with increasing external electrostatic field in agreement with the average charge state of silicon ions detected experimentally. When field evaporation is triggered by laser-induced electronic excitations the charge state also increases with increasing intensity of the laser pulse. At the evaporation threshold, the charge state of the evaporating ion does not depend on the electrostatic field due to the strong contribution of laser excitations to themore » ionization process both at low and high laser energies. A neutral silicon atom escaping the cluster due to its high initial kinetic energy is shown to be eventually ionized by external electrostatic field.« less

A physical mechanism for the onset of radial electric fields in magnetically confined plasmas

NASA Astrophysics Data System (ADS)

Moleti, A.

1996-04-01

A simple physical mechanism is described, which could trigger the Low-mode to High-mode (L-H) transition. The instantaneous ion density profile is significantly modified by a sudden temperature increase, because Larmor radii and banana orbit widths are proportional to thermal velocity. The electric fields that are observed in H-mode plasmas could be produced in the radial region where a large second derivative of the density profile exists, either by strong additional heating or by the heat pulse associated to a sawtooth crash. The L-H transition threshold for the time derivative of the ion temperature is of the order of magnitude of the values that are measured in the outer part of the plasma by electron temperature fast diagnostics at sawtooth crashes. This model agrees with the experimental evidence that L-H transitions are often triggered by a sawtooth crash, and the predicted dependence of the threshold on plasma parameters is fairly consistent with available data.

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

PubMed Central

Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo

2015-01-01

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field. Thus, accumulated hole traps near the channel/dielectric interface cause negative shift of the threshold voltage, supporting the oxygen vacancy model. In addition, we find that ionized oxygen vacancies easily recover their neutral defect configurations by capturing electrons when the Fermi level increases. Our results are in good agreement with the experimental observation that applying a positive gate bias pulse of short duration eliminates hole traps and thus leads to the recovery of device stability from persistent photoconductivity. PMID:27877799

Microturbulence studies of pulsed poloidal current drive discharges in the reversed field pinch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carmody, D., E-mail: dcarmody@wisc.edu; Pueschel, M. J.; Anderson, J. K.

2015-01-15

Experimental discharges with pulsed poloidal current drive (PPCD) in the Madison Symmetric Torus reversed field pinch are investigated using a semi-analytic equilibrium model in the gyrokinetic turbulence code GENE. PPCD cases, with plasma currents of 500 kA and 200 kA, exhibit a density-gradient-driven trapped electron mode (TEM) and an ion temperature gradient mode, respectively. Relative to expectations of tokamak core plasmas, the critical gradients for the onset of these instabilities are found to be greater by roughly a factor of the aspect ratio. A significant upshift in the nonlinear TEM transport threshold, previously found for tokamaks, is confirmed in nonlinear reversed fieldmore » pinch simulations and is roughly three times the threshold for linear instability. The simulated heat fluxes can be brought in agreement with measured diffusivities by introducing a small, resonant magnetic perturbation, thus modeling the residual fluctuations from tearing modes. These fluctuations significantly enhance transport.« less

Absolute instability of polaron mode in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

2018-01-01

Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, A; Lin, H; Rubio-Sanchez, J

Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

TH-EF-207A-03: Photon Counting Implementation Challenges Using An Electron Multiplying Charged-Coupled Device Based Micro-CT System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podgorsak, A; Bednarek, D; Rudin, S

2016-06-15

Purpose: To successfully implement and operate a photon counting scheme on an electron multiplying charged-coupled device (EMCCD) based micro-CT system. Methods: We built an EMCCD based micro-CT system and implemented a photon counting scheme. EMCCD detectors use avalanche transfer registries to multiply the input signal far above the readout noise floor. Due to intrinsic differences in the pixel array, using a global threshold for photon counting is not optimal. To address this shortcoming, we generated a threshold array based on sixty dark fields (no x-ray exposure). We calculated an average matrix and a variance matrix of the dark field sequence.more » The average matrix was used for the offset correction while the variance matrix was used to set individual pixel thresholds for the photon counting scheme. Three hundred photon counting frames were added for each projection and 360 projections were acquired for each object. The system was used to scan various objects followed by reconstruction using an FDK algorithm. Results: Examination of the projection images and reconstructed slices of the objects indicated clear interior detail free of beam hardening artifacts. This suggests successful implementation of the photon counting scheme on our EMCCD based micro-CT system. Conclusion: This work indicates that it is possible to implement and operate a photon counting scheme on an EMCCD based micro-CT system, suggesting that these devices might be able to operate at very low x-ray exposures in a photon counting mode. Such devices could have future implications in clinical CT protocols. NIH Grant R01EB002873; Toshiba Medical Systems Corp.« less

Quantum state transfer in double-quantum-well devices

NASA Technical Reports Server (NTRS)

Jakumeit, Jurgen; Tutt, Marcel; Pavlidis, Dimitris

1994-01-01

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Optical ranked-order filtering using threshold decomposition

DOEpatents

Allebach, J.P.; Ochoa, E.; Sweeney, D.W.

1987-10-09

A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed. 3 figs.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

CERA-V: Microwave plasma stream source with variable ion energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balmashnov, A.A.

1996-01-01

A microwave plasma stream source with variable ion energy operated under low magnetic field electron cyclotron resonance conditions has been developed. A two mode resonant cavity (TE{sub 111}, {ital E}{sub 010}) was used. It was established that overdense plasma creation (TE{sub 111}) and high energy in-phase space localized electron plasma oscillations ({ital E}{sub 010}) in a decreased magnetic field lead to the potential for ion energy variation from 10 to 300 eV (up to 1 A of ion current, and a plasma cross section of 75 cm{sup 2}, hydrogen) by varying the TE{sub 111}, {ital E}{sub 010} power, the valuemore » of the magnetic field, and pressure. The threshold level of {ital E}{sub 010}-mode power was also determined. An application of this CERA-V source to hydrogenation of semiconductor devices without deterioration of surface layers by ions and fast atoms is under investigation. {copyright} {ital 1996 American Vacuum Society}« less

Electronic transition imaging of carbon based materials: The photothreshold of melanin and thermionic field emission from diamond

NASA Astrophysics Data System (ADS)

Garguilo, Jacob

This study explores electronic transitions in carbon based materials through the use of a custom built, non rastering electron emission microscope. The specifics and history of electron emission are described as well as the equipment used in this study. The materials examined fall into two groups, melanosome films isolated from the human body and polycrystalline diamond tip arrays. A novel technique for determining the photothreshold of a heterogeneous material on a microscopic or smaller scale is developed and applied to melanosome films isolated from the hair, eyes, and brain of human donors. The conversion of the measured photothreshold on the vacuum scale to an electrochemical oxidation potential is discussed and the obtained data is considered based on this conversion. Pheomelanosomes isolated from human hair are shown to have significantly lower photoionization energy than eumelanosomes, indicating their likelihood as sources of oxidative stress. The ionization energies of the hair melanosomes are checked with complimentary procedures. Ocular melanosomes from the retinal pigment epithelium are measured as a function of patient age and melanosome shape. Lipofuscin, also found in the eye, is examined with the same microscopy technique and shown to have a significantly lower ionization threshold than RPE melanosomes. Neuromelanin from the substantia nigra is also examined and shown to have an ionization threshold close to that of eumelanin. A neuromelanin formation model is proposed based on these results. Polycrystalline diamond tip arrays are examined for their use as thermionic energy converter emitters. Thermionic energy conversion is accomplished through the combination of a hot electron emitter in conjunction with a somewhat cooler electron collector. The generated electron current can be used to do work in an external load. It is shown that the tipped structures of these samples result in enhanced emission over the surrounding flat areas, which may prove valuable in limiting the negative space charge effect in vacuum energy converting devices. Additionally, the effects of exceeding a threshold temperature for the films are shown, establishing a maximum operating regime for any device which incorporates hydrogen terminated diamond.

Nowcast model for low-energy electrons in the inner magnetosphere

NASA Astrophysics Data System (ADS)

Ganushkina, N. Yu.; Amariutei, O. A.; Welling, D.; Heynderickx, D.

2015-01-01

We present the nowcast model for low-energy (<200 keV) electrons in the inner magnetosphere, which is the version of the Inner Magnetosphere Particle Transport and Acceleration Model (IMPTAM) for electrons. Low-energy electron fluxes are very important to specify when hazardous satellite surface-charging phenomena are considered. The presented model provides the low-energy electron flux at all L shells and at all satellite orbits, when necessary. The model is driven by the real-time solar wind and interplanetary magnetic field (IMF) parameters with 1 h time shift for propagation to the Earth's magnetopause and by the real time Dst index. Real-time geostationary GOES 13 or GOES 15 (whenever each is available) data on electron fluxes in three energies, such as 40 keV, 75 keV, and 150 keV, are used for comparison and validation of IMPTAM running online. On average, the model provides quite reasonable agreement with the data; the basic level of the observed fluxes is reproduced. The best agreement between the modeled and the observed fluxes are found for <100 keV electrons. At the same time, not all the peaks and dropouts in the observed electron fluxes are reproduced. For 150 keV electrons, the modeled fluxes are often smaller than the observed ones by an order of magnitude. The normalized root-mean-square deviation is found to range from 0.015 to 0.0324. Though these metrics are buoyed by large standard deviations, owing to the dynamic nature of the fluxes, they demonstrate that IMPTAM, on average, predicts the observed fluxes satisfactorily. The computed binary event tables for predicting high flux values within each 1 h window reveal reasonable hit rates being 0.660-0.318 for flux thresholds of 5 ·104-2 ·105 cm-2 s-1 sr-1 keV-1 for 40 keV electrons, 0.739-0.367 for flux thresholds of 3 ·104-1 ·105 cm-2 s-1 sr-1 keV-1 for 75 keV electrons, and 0.485-0.438 for flux thresholds of 3 ·103-3.5 ·103 cm-2 s-1 sr-1 keV-1 for 150 keV electrons but rather small Heidke Skill Scores (0.17 and below). This is the first attempt to model low-energy electrons in real time at 10 min resolution. The output of this model can serve as an input of electron seed population for real-time higher-energy radiation belt modeling.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Fraction of Electrons Consumed in Electron Acceptor Reduction and Hydrogen Thresholds as Indicators of Halorespiratory Physiology

PubMed Central

Löffler, Frank E.; Tiedje, James M.; Sanford, Robert A.

1999-01-01

Measurements of the hydrogen consumption threshold and the tracking of electrons transferred to the chlorinated electron acceptor (fe) reliably detected chlororespiratory physiology in both mixed cultures and pure cultures capable of using tetrachloroethene, cis-1,2-dichloroethene, vinyl chloride, 2-chlorophenol, 3-chlorobenzoate, 3-chloro-4-hydroxybenzoate, or 1,2-dichloropropane as an electron acceptor. Hydrogen was consumed to significantly lower threshold concentrations of less than 0.4 ppmv compared with the values obtained for the same cultures without a chlorinated compound as an electron acceptor. The fe values ranged from 0.63 to 0.7, values which are in good agreement with theoretical calculations based on the thermodynamics of reductive dechlorination as the terminal electron-accepting process. In contrast, a mixed methanogenic culture that cometabolized 3-chlorophenol exhibited a significantly lower fe value, 0.012. PMID:10473415

Interplay between protons and electrons in a firehose-unstable plasma: Particle-in-cell simulations

NASA Astrophysics Data System (ADS)

Bourdin, Philippe-A.; Maneva, Yana

2017-04-01

Kinetic plasma instabilities originating from unstable, non-Maxwellian shapes of the velocity distribution functions serve as internal degrees of freedom in plasma dynamics, and play an important role near solar current sheets and in solar wind plasmas. In the presence of strong temperature anisotropy (different thermal spreads in the velocity space with respect to the mean magnetic field), plasmas are unstable either to the firehose mode or to the mirror mode in the case of predominant parallel and perpendicular temperatures, respectively. The growth rates of these instabilities and their thresholds depend on plasma properties, such as the temperature anisotropy and the plasma beta. The physics of the temperature anisotropy-driven instabilities becomes even more diverse for various shapes of velocity distribution functions and the particle species of interest. Recent studies based on a linear instability analysis show an interplay in the firehose instability between protons and electrons when the both types of particle species are prone to unstable velocity distribution functions and their instability thresholds. In this work we perform for the first time 3D nonlinear PIC (particle-in-cell) numerical simulations to test for the linear-theory prediction of the simultaneous proton-electron firehose instability. The simulation setup allows us not only to evaluate the growth rate of each firehose instability, but also to track its nonlinear evolution and the related wave-particle interactions such as the pitch-angle scattering or saturation effects. The specialty of our simulation is that the magnetic and electric fields have a low numerical noise level by setting a sufficiently large number of super-particles into the simulation box and enhancing the statistical significance of the velocity distribution functions. We use the iPIC3D code with fully periodic boundaries under various conditions of the electron-to-proton mass ratio, which gives insight into the instability interplay at the intermediate electron-proton and on the scaling of our results towards more realistic particle settings.

Moments of the electron energy spectrum and partial branching fraction of B{yields}X{sub c}e{nu} decays at the Belle detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urquijo, P.; Barberio, E.; Dalseno, J.

2007-02-01

We report a measurement of the inclusive electron energy spectrum for charmed semileptonic decays of B mesons in a 140 fb{sup -1} data sample collected at the {upsilon}(4S) resonance with the Belle detector at the KEKB asymmetric energy e{sup +}e{sup -} collider. We determine the first four moments of the electron energy spectrum for threshold values of the electron energy between 0.4 and 2.0 GeV. In addition, we provide values of the partial branching fraction (zeroth moment) for the same electron threshold energies, and independent measurements of the B{sup +} and B{sup 0} partial branching fractions at 0.4 GeV andmore » 0.6 GeV electron threshold energies. We measure the independent B{sup +} and B{sup 0} partial branching fractions with electron threshold energies of 0.4 GeV to be {delta}B(B{sup +}{yields}X{sub c}e{nu})=(10.79{+-}0.25(stat.){+-}0.27(sys.))% and {delta}B(B{sup 0}{yields}X{sub c}e{nu})=(10.08{+-}0.30(stat.){+-}0.22(sys.))%. Full correlations between all measurements are evaluated.« less

Berry phase dependent quantum trajectories of electron-hole pairs in semiconductors under intense terahertz fields

NASA Astrophysics Data System (ADS)

Yang, Fan; Liu, Ren-Bao

2013-03-01

Quantum evolution of particles under strong fields can be approximated by the quantum trajectories that satisfy the stationary phase condition in the Dirac-Feynmann path integrals. The quantum trajectories are the key concept to understand strong-field optics phenomena, such as high-order harmonic generation (HHG), above-threshold ionization (ATI), and high-order terahertz siedeband generation (HSG). The HSG in semiconductors may have a wealth of physics due to the possible nontrivial ``vacuum'' states of band materials. We find that in a spin-orbit-coupled semiconductor, the cyclic quantum trajectories of an electron-hole pair under a strong terahertz field accumulates nontrivial Berry phases. We study the monolayer MoS2 as a model system and find that the Berry phases are given by the Faraday rotation angles of the pulse emission from the material under short-pulse excitation. This result demonstrates an interesting Berry phase dependent effect in the extremely nonlinear optics of semiconductors. This work is supported by Hong Kong RGC/GRF 401512 and the CUHK Focused Investments Scheme.

Identification of doubly excited states in nonsequential double ionization of Ar in strong laser fields

NASA Astrophysics Data System (ADS)

Chen, Zhangjin; Li, Xiaojin; Sun, Xiaoli; Hao, Xiaolei; Chen, Jing

2017-12-01

We use the semiclassical model to study the intensity dependence of nonsequential double ionization (NSDI) of Ar in short strong laser pulses. The contributions to NSDI through sequential ionization of doubly excited states (SIDE) are identified by tracking the energy trajectories of the two outgoing electrons. The correlated electron momentum distributions are calculated from which the longitudinal momentum distributions of the fast and the slow electrons for the side-by-side and the back-to-back emissions are obtained. The simulated momentum distributions of the fast and the slow electrons for NSDI of Ar by linearly polarized fields with a wavelength of 795 nm at an intensity of 7 × 1013 W cm-2 are in good agreement with the experimental measurements of Liu et al (2014 Phys. Rev. Lett. 112 013003). We demonstrate that the process of double ionization through SIDE dominates NSDI only when the laser intensities are below the recollision threshold; nevertheless, for higher intensities the SIDE process still takes place although the contribution to the NSDI yields decreases rapidly as the intensity increases. It has been found that for SIDE at different intensities, both the correlated electron momentum spectra and the momentum distributions of the fast and the slow electrons remain the same.

Ultrafast dynamics of non-equilibrium electrons and strain generation under femtosecond laser irradiation of Nickel

NASA Astrophysics Data System (ADS)

Tsibidis, George D.

2018-04-01

We present a theoretical study of the ultrafast electron dynamics in transition metals of large electron-phonon coupling constant using ultrashort pulsed laser beams. The significant influence of the dynamics of produced nonthermal electrons to electron thermalisation and electron-phonon interaction is thoroughly investigated for various values of the pulse duration (i.e., from 10 fs to 2.3 ps). The model correlates the role of nonthermal electrons, relaxation processes and induced stress-strain fields. Simulations are presented by choosing Nickel (Ni) as a test material to compute electron-phonon relaxation time due to its large electron-phonon coupling constant. We demonstrate that the consideration of the aforementioned factors leads to significant changes compared to the results the traditional two-temperature model provides. The proposed model predicts a substantially ( 33%) smaller damage threshold and a large increase of the stress ( 20%, at early times) which first underlines the role of the nonthermal electron interactions and second enhances its importance with respect to the precise determination of laser specifications in material micromachining techniques.

Strong plasma turbulence in the earth's electron foreshock

NASA Technical Reports Server (NTRS)

Robinson, P. A.; Newman, D. L.

1991-01-01

A quantitative model is developed to account for the distribution in magnitude and location of the intense plasma waves observed in the earth's electron foreshock given the observed rms levels of waves. In this model, nonlinear strong-turbulence effects cause solitonlike coherent wave packets to form and decouple from incoherent background beam-excited weak turbulence, after which they convect downstream with the solar wind while collapsing to scales as short as 100 m and fields as high as 2 V/m. The existence of waves with energy densities above the strong-turbulence wave-collapse threshold is inferred from observations from IMP 6 and ISEE 1 and quantitative agreement is found between the predicted distribution of fields in an ensemble of such wave packets and the actual field distribution observed in situ by IMP 6. Predictions for the polarization of plasma waves and the bandwidth of ion-sound waves are also consistent with the observations. It is shown that strong-turbulence effects must be incorporated in any comprehensive theory of the propagation and evolution of electron beams in the foreshock. Previous arguments against the existence of strong turbulence in the foreshock are refuted.

Magnetic Photon Splitting: The S-Matrix Formulation in the Landau Representation

NASA Technical Reports Server (NTRS)

Baring, Matthew G.

1999-01-01

Calculations of reaction rates for the third-order QED process of photon splitting gamma yields gamma.gamma in strong magnetic fields traditionally have employed either the effective Lagrangian method or variants of Schwinger's proper-time technique. Recently, Mentzel, Berg and Wunner [1] presented an alternative derivation via an S-matrix formulation in the Landau representation. Advantages of such a formulation include the ability to compute rates near pair resonances above pair threshold. This paper presents new developments of the Landau representation formalism as applied to photon splitting, providing significant, advances beyond the work of [1] by summing over the spin quantum numbers of the electron propagators, and analytically integrating over the component of momentum of the intermediate states that is parallel to field. The ensuing tractable expressions for the scattering amplitudes are satisfyingly compact, and of an appearance familiar to S-matrix theory applications. Such developments can facilitate numerical computations of splitting considerably both below and above pair threshold. Specializations to two regimes of interest are obtained, namely the limit of highly supercritical fields and the domain where photon energies are far inferior to that for the threshold of single-photon pair creation. In particular, for the first time the low-frequency amplitudes are simply expressed in terms of the Gamma function, its integral and its derivatives. In addition, the equivalence of the asymptotic forms in these two domains to extant results from effective Lagrangian/proper- time formulations is demonstrated.

Vertically aligned carbon nanotubes from natural precursors by spray pyrolysis method and their field electron emission properties

NASA Astrophysics Data System (ADS)

Ghosh, Pradip; Soga, T.; Tanemura, M.; Zamri, M.; Jimbo, T.; Katoh, R.; Sumiyama, K.

2009-01-01

Vertically aligned carbon nanotubes have been synthesized from botanical hydrocarbons: Turpentine oil and Eucalyptus oil on Si(100) substrate using Fe catalyst by simple spray pyrolysis method at 700°C and at atmospheric pressure. The as-grown carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), thermogravimetric analysis (TGA), differential thermal analysis (DTA), and Raman spectroscopy. It was observed that nanotubes grown from turpentine oil have better degree of graphitization and field emission performance than eucalyptus oil grown carbon nanotubes. The turpentine oil and eucalyptus oil grown carbon nanotubes indicated that the turn-on field of about 1.7 and 1.93 V/μm, respectively, at 10 μA/cm2. The threshold field was observed to be about 2.13 and 2.9 V/μm at 1 mA/cm2 of nanotubes grown from turpentine oil and eucalyptus oil respectively. Moreover, turpentine oil grown carbon nanotubes show higher current density in relative to eucalyptus oil grown carbon nanotubes. The maximum current density of 15.3 mA/cm2 was obtained for ˜3 V/μm corresponding to the nanotubes grown from turpentine oil. The improved field emission performance was attributed to the enhanced crystallinity, fewer defects, and greater length of turpentine oil grown carbon nanotubes.

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

NASA Astrophysics Data System (ADS)

Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

2016-01-01

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

Dimits shift in realistic gyrokinetic plasma-turbulence simulations.

PubMed

Mikkelsen, D R; Dorland, W

2008-09-26

In simulations of turbulent plasma transport due to long wavelength (k perpendicular rhoi < or = 1) electrostatic drift-type instabilities, we find a persistent nonlinear up-shift of the effective threshold. Next-generation tokamaks will likely benefit from the higher effective threshold for turbulent transport, and transport models should incorporate suitable corrections to linear thresholds. The gyrokinetic simulations reported here are more realistic than previous reports of a Dimits shift because they include nonadiabatic electron dynamics, strong collisional damping of zonal flows, and finite electron and ion collisionality together with realistic shaped magnetic geometry. Reversing previously reported results based on idealized adiabatic electrons, we find that increasing collisionality reduces the heat flux because collisionality reduces the nonadiabatic electron microinstability drive.

Effect of A-site La and Ba doping on threshold field and characteristic temperatures of PbSc0.5Ta0.5O3 relaxor studied by acoustic emission

NASA Astrophysics Data System (ADS)

Dul'kin, E.; Mihailova, B.; Gospodinov, M.; Roth, M.

2012-09-01

The structural transitions in Pb1-xLaxSc(1+x)/2Ta(1-x)/2O3, x = 0.08 (PLST) relaxor crystals were studied by means of acoustic emission (AE) under an external electric field (E) and compared with those observed in pure PbSc0.5Ta0.5O3 (PST) and Pb0.78Ba0.22Sc0.5Ta0.5O3 (PBST) [E. Dul'kin et al., EPL 94, 57002 (2011)]. Similar to both the PST and PBST compounds, in zero field PLST exhibits AE corresponding to a para-to-antiferroelectric incommensurate phase transition at Tn = 276 K, lying in the vicinity of dielectric temperature maximum (Tm). This AE signal exhibits a nontrivial behavior when applying E resembling the electric-field-dependence of Tn previously observed for both the PST and PBST, namely, Tn initially decreases with the increase of E, attains a minimum at a threshold field Eth = 0.5 kV/cm, accompanied by a pronounced maximum of the AE count rate Ṅ = 12 s-1, and then starts increasing as E enhances. The similarities and difference between PST, PLST, and PBST with respect to Tn, Eth, and Ṅ are discussed from the viewpoint of three mechanisms: (i) chemically induced random local electric field due to the extra charge on the A-site ion, (ii) disturbance of the system of stereochemically active lone-pair electrons of Pb2+ by the isotropic outermost electron shell of substituting ion, and (iii) change in the tolerance factor and elastic field to the larger ionic radius of the substituting A-site ion due to the different radius of the substituting ion. The first two mechanisms influence the actual values of Tn and Eth, whereas the latter is shown to affect the normalized Ṅ, indicating the fractions undergoing a field-induced crossover from a modulated antiferroelectric to a ferroelectric state. Creation of secondary random electric field, caused by doping-induced A-site-O ionic chemical bonding, is discussed.

Model predictions for atmospheric air breakdown by radio-frequency excitation in large gaps

NASA Astrophysics Data System (ADS)

Nguyen, H. K.; Mankowski, J.; Dickens, J. C.; Neuber, A. A.; Joshi, R. P.

2017-07-01

The behavior of the breakdown electric field versus frequency (DC to 100 MHz) for different gap lengths has been studied numerically at atmospheric pressure. Unlike previous reports, the focus here is on much larger gap lengths in the 1-5 cm range. A numerical analysis, with transport coefficients obtained from Monte Carlo calculations, is used to ascertain the electric field thresholds at which the growth and extinction of the electron population over time are balanced. Our analysis is indicative of a U-shaped frequency dependence, lower breakdown fields with increasing gap lengths, and trends qualitatively similar to the frequency-dependent field behavior for microgaps. The low frequency value of ˜34 kV/cm for a 1 cm gap approaches the reported DC Paschen limit.

Review on Monte-Carlo Tools for Simulating Relativistic Runaway Electron Avalanches and the Propagation of TerretrialTerrestrial-Gamma Ray Flashes in the Atmosphere

NASA Astrophysics Data System (ADS)

Sarria, D.

2016-12-01

The field of High Energy Atmospheric Physics (HEAP) includes the study of energetic events related to thunderstorms, such as Terrestrial Gamma-ray Flashes (TGF), associated electron-positron beams (TEB), gamma-ray glows and Thunderstorm Ground Enhancements (TGE). Understanding these phenomena requires accurate models for the interaction of particles with atmospheric air and electro-magnetic fields in the <100 MeV energy range. This study is the next step of the work presented in [C. Rutjes et al., 2016] that compared the performances of various codes in the absence of electro-magnetic fields. In the first part, we quantify simple but informative test cases of electrons in various electric field profiles. We will compare the avalanche length (of the Relativistic Runaway Electron Avalanche (RREA) process), the photon/electron spectra and spatial scattering. In particular, we test the effect of the low-energy threshold, that was found to be very important [Skeltved et al., 2014]. Note that even without a field, it was found to be important because of the straggling effect [C. Rutjes et al., 2016]. For this first part, we will be comparing GEANT4 (different flavours), FLUKA and the custom made code GRRR. In the second part, we test the propagation of these high energy particles in the atmosphere, from production altitude (around 10 km to 18 km) to satellite altitude (600 km). We use a simple and clearly fixed set-up for the atmospheric density, the geomagnetic field, the initial conditions, and the detection conditions of the particles. For this second part, we will be comparing GEANT4 (different flavours), FLUKA/CORSIKA and the custom made code MC-PEPTITA. References : C. Rutjes et al., 2016. Evaluation of Monte Carlo tools for high energy atmospheric physics. Geosci. Model Dev. Under review. Skeltved, A. B. et al., 2014. Modelling the relativistic runaway electron avalanche and the feedback mechanism with geant4. JGRA, doi :10.1002/2014JA020504.

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

PubMed

Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-01-06

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

First principles study of size and external electric field effects on the atomic and electronic properties of gallium nitride nanostructures

NASA Astrophysics Data System (ADS)

Yilmaz, Hulusi

A comprehensive density functional theory study of atomic and the electronic properties of wurtzite gallium nitride (GaN) nanostructures with different sizes and shapes is presented and the effect of external electric field on these properties is examined. We show that the atomic and electronic properties of [101¯0] facet single-crystal GaN nanotubes (quasi-1D), nanowires (1D) and nanolayers (2D) are mainly determined by the surface to volume ratio. The shape dependent quantum confinement and strain effects on the atomic and electronic properties of these GaN nanostructures are found to be negligible. Based on this similarity between the atomic and electronic properties of the small size GaN nanostructures, we calculated the atomic and electronic properties of the practical size (28.1 A wall thickness) single-crystal GaN nanotubes through computational much economical GaN nanoslabs (nanolayers). Our results show that, regardless of diameter, hydrogen saturated single-crystal GaN tubes with the wall thickness of 28.1 A are energetically stable and they have a noticeably larger band gap with respect to the band gap of bulk GaN. The band gap of unsaturated single-crystal GaN tubes, on the other hand, is always smaller than the band gap of the wurtzite bulk GaN. In a separate study, we show that a transverse electric field induces a homojunction across the diameter of initially semiconducting GaN single-crystal nanotubes and nanowires. The homojunction arises due to the decreased energy of the electronic states in the higher potential region with respect to the energy of those states in the lower potential region under the transverse electric field. Calculations on single-crystal GaN nanotubes and nanowires of different diameter and wall thickness show that the threshold electric field required for the semiconductor-homojunction induction increases with increasing wall thickness and decreases significantly with increasing diameter.

Electron dynamics characteristics in high-intensity laser fields

NASA Astrophysics Data System (ADS)

Kong, Q.; Ho, Y. K.; Cao, N.; Pang, J.; Wang, P. X.; Shao, L.

This paper addresses the conditions under which the vacuum laser acceleration scheme CAS (capture and acceleration scenario), newly proposed by the authors (see, e.g., P.X. Wang et al., Appl. Phys. Lett. 78, 2253 (2001)), can be observed. Specifically, the laser intensity threshold (a0)th and the range of the electron incident momentum for the CAS scheme to emerge are examined. We found that (a0)th is critically dependent on the laser beam width w0. At kw0=60, (a0)th=8, which is an intensity obtainable using present laser systems. The required energy of the incident electron is in the range 5-15 MeV. This study is of significance in designing an experimental setup to test CAS and helpful in understanding the basic physics of CAS.

Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

PubMed

Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

2011-11-09

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Feng, Steven; Glavin, Daniel P.; Auciello, Orlando; Sumant, Anirudha

2012-01-01

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Interfacial fields in organic field-effect transistors and sensors

NASA Astrophysics Data System (ADS)

Dawidczyk, Thomas J.

Organic electronics are currently being commercialized and present a viable alternative to conventional electronics. These organic materials offer the ability to chemically manipulate the molecule, allowing for more facile mass processing techniques, which in turn reduces the cost. One application where organic semiconductors (OSCs) are being investigated is sensors. This work evaluates an assortment of n- and p-channel semiconductors as organic field-effect transistor (OFET) sensors. The sensor responses to dinitrotoluene (DNT) vapor and solid along with trinitrotoluene (TNT) solid were studied. Different semiconductor materials give different magnitude and direction of electrical current response upon exposure to DNT. Additional OFET parameters---mobility and threshold voltage---further refine the response to the DNT with each OFET sensor requiring a certain gate voltage for an optimized response to the vapor. The pattern of responses has sufficient diversity to distinguish DNT from other vapors. To effectively use these OFET sensors in a circuit, the threshold voltage needs to be tuned for each transistor to increase the efficiency of the circuit and maximize the sensor response. The threshold voltage can be altered by embedding charges into the dielectric layer of the OFET. To study the quantity and energy of charges needed to alter the threshold voltage, charge carriers were injected into polystyrene (PS) and investigated with scanning Kelvin probe microscopy (SKPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using SKPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method. The process was further refined to create lateral heterojunctions that were actual working OFETs, consisting of a PS or poly (3-trifluoro)styrene (F-PS) gate dielectric and a pentacene OSC. The charge storage inside the dielectric was visualized with SKPM, correlated to a threshold voltage shift in the transistor operation, and related to bias stress as well. The SKPM method allows the dielectric/OSC interface of the OFET to be visualized without any alteration of the OFET. Furthermore, this technique allows for the observation of charge distribution between the two dielectric interfaces, PS and F-PS. The SKPM is used to visualize the charge from conventional gate biasing and also as a result of embedding charges deliberately into the dielectric to shift the threshold voltage. Conventional gate biasing shows considerable residual charge in the PS dielectric, which results in gate bias stress. Gate bias stress is one of the major hurdles left in the commercialization of OFETs. To prevent this bias stress, additives of different energy levels were inserted into the dielectric to limit the gate bias stress. Additionally, the dielectrics were pre-charged to try and prevent further bias stress. Neither pre-charging the dielectric or the addition of additive has been used in gate bias prevention, but both methods offer improved resistance to gate bias stress, and help to further refine the dielectric design.

Study on acceleration processes of the radiation belt electrons through interaction with sub-packet chorus waves in parallel propagation

NASA Astrophysics Data System (ADS)

Hiraga, R.; Omura, Y.

2017-12-01

By recent observations, chorus waves include fine structures such as amplitude fluctuations (i.e. sub-packet structure), and it has not been verified in detail yet how energetic electrons are efficiently accelerated under the wave features. In this study, we firstly focus on the acceleration process of a single electron: how it experiences the efficient energy increase by interaction with sub-packet chorus waves in parallel propagation along the Earth's magnetic field. In order to reproduce the chorus waves as seen by the latest observations by Van Allen Probes (Foster et al. 2017), the wave model amplitude in our simulation is structured such that when the wave amplitude nonlinearly grows to reach the optimum amplitude, it starts decreasing until crossing the threshold. Once it crosses the threshold, the wave dissipates and a new wave rises to repeat the nonlinear growth and damping in the same manner. The multiple occurrence of this growth-damping cycle forms a saw tooth-like amplitude variation called sub-packet. This amplitude variation also affects the wave frequency behavior which is derived by the chorus wave equations as a function of the wave amplitude (Omura et al. 2009). It is also reasonable to assume that when a wave packet diminishes and the next wave rises, it has a random phase independent of the previous wave. This randomness (discontinuity) in phase variation is included in the simulation. Through interaction with such waves, dynamics of energetic electrons were tracked. As a result, some electrons underwent an efficient acceleration process defined as successive entrapping, in which an electron successfully continues to surf the trapping potential generated by consecutive wave packets. When successive entrapping occurs, an electron trapped and de-trapped (escape the trapping potential) by a single wave packet falls into another trapping potential generated by the next wave sub-packet and continuously accelerated. The occurrence of successive entrapping is influenced by some factors such as the magnitude of wave amplitude or inhomogeneity of the Earth's dipole magnetic field. In addition, an energy range of electrons is also a major factor. In this way, it has been examined in detail how and under which conditions electrons are efficiently accelerated in the formation process of the radiation belts.

Angle-resolved high-order above-threshold ionization of a molecule: sensitive tool for molecular characterization.

PubMed

Busuladzić, M; Gazibegović-Busuladzić, A; Milosević, D B; Becker, W

2008-05-23

The strong-field approximation for ionization of diatomic molecules by an intense laser field is generalized to include rescattering of the ionized electron off the various centers of its molecular parent ion. The resulting spectrum and its interference structure strongly depend on the symmetry of the ground state molecular orbital. For N2, if the laser polarization is perpendicular to the molecular axis, we observe a distinct minimum in the emission spectrum, which survives focal averaging and allows determination of, e.g., the internuclear separation. In contrast, for O2, rescattering is absent in the same situation.

Hall-effect arc protector

DOEpatents

Rankin, R.A.; Kotter, D.K.

1997-05-13

The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored. 2 figs.

Hall-effect arc protector

DOEpatents

Rankin, Richard A.; Kotter, Dale K.

1997-01-01

The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored.

p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures

NASA Astrophysics Data System (ADS)

Zuo, P.; Jiang, Y.; Ma, Z. G.; Wang, L.; Zhao, B.; Li, Y. F.; Yue, G.; Wu, H. Y.; Yan, H. J.; Jia, H. Q.; Wang, W. X.; Zhou, J. M.; Sun, Q.; Liu, W. M.; Ji, An-Chun; Chen, H.

2017-08-01

The GaN-based p -n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p -n junction rectifying characteristics can be realized with pure n -type structures by inserting an (In,Ga)N quantum well into the GaN /(Al ,Ga )N /GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In ,Ga )N /GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p -n junction rectifying characteristics.

An ITPA joint experiment to study runaway electron generation and suppression

DOE PAGES

Granetz, Robert S.; Esposito, B.; Kim, J. H.; ...

2014-07-11

Recent results from an ITPA joint experiment to study the onset, growth, and decay of relativistic electrons (REs) indicate that loss mechanisms other than collisional damping may play a dominant role in the dynamics of the RE population, even during the quiescent Ip flattop. Understanding the physics of RE growth and mitigation is motivated by the theoretical prediction that disruptions of full-current (15 MA) ITER discharges could generate up to 10 MA of REs with 10-20 MeV energies. The ITPA MHD group is conducting a joint experiment to measure the RE detection threshold conditions on a number of tokamaks undermore » quasi-steady-state conditions in which V loop, n e, and REs can be well-diagnosed and compared to collisional theory. Data from DIII-D, C-Mod, FTU, KSTAR, and TEXTOR have been obtained so far, and the consensus to date is that the threshold E-field is significantly higher than predicted by relativistic collisional theory, or conversely, the density required to damp REs is significantly less than predicted, which could have significant implications for RE mitigation on ITER.« less

Commensurability resonances in two-dimensional magnetoelectric lateral superlattices

NASA Astrophysics Data System (ADS)

Schluck, J.; Fasbender, S.; Heinzel, T.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.

2015-05-01

Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in Ga [Al ]As heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetoresistivity in the direction perpendicular to the magnetic modulation shows pronounced classical resonances. They are located at magnetic fields where snake trajectories exist which are quasicommensurate with the antidot lattice. The diagonal magnetoresistivity in the direction of the magnetic modulation increases sharply above a threshold magnetic field and shows no fine structure. The experimental results are interpreted with the help of numerical simulations based on the semiclassical Kubo model.

Normal Threshold Size of Stimuli in Children Using a Game-Based Visual Field Test.

PubMed

Wang, Yanfang; Ali, Zaria; Subramani, Siddharth; Biswas, Susmito; Fenerty, Cecilia; Henson, David B; Aslam, Tariq

2017-06-01

The aim of this study was to demonstrate and explore the ability of novel game-based perimetry to establish normal visual field thresholds in children. One hundred and eighteen children (aged 8.0 ± 2.8 years old) with no history of visual field loss or significant medical history were recruited. Each child had one eye tested using a game-based visual field test 'Caspar's Castle' at four retinal locations 12.7° (N = 118) from fixation. Thresholds were established repeatedly using up/down staircase algorithms with stimuli of varying diameter (luminance 20 cd/m 2 , duration 200 ms, background luminance 10 cd/m 2 ). Relationships between threshold and age were determined along with measures of intra- and intersubject variability. The Game-based visual field test was able to establish threshold estimates in the full range of children tested. Threshold size reduced with increasing age in children. Intrasubject variability and intersubject variability were inversely related to age in children. Normal visual field thresholds were established for specific locations in children using a novel game-based visual field test. These could be used as a foundation for developing a game-based perimetry screening test for children.

Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

NASA Astrophysics Data System (ADS)

Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; van Bael, Marlies K.; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I.-Nan; Haenen, Ken

2016-07-01

Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

Sucrose acceptance and different forms of associative learning of the honey bee (apis mellifera L.) in the field and laboratory.

PubMed

Mujagic, Samir; Sarkander, Jana; Erber, Barbara; Erber, Joachim

2010-01-01

The experiments analyze different forms of learning and 24-h retention in the field and in the laboratory in bees that accept sucrose with either low (/=30% or >/=50%) concentrations. In the field we studied color learning at a food site and at the hive entrance. In the laboratory olfactory conditioning of the proboscis extension response (PER) was examined. In the color learning protocol at a feeder, bees with low sucrose acceptance thresholds (/=50%). Retention after 24 h is significantly different between the two groups of bees and the choice reactions converge. Bees with low and high acceptance thresholds in the field show no differences in the sucrose sensitivity PER tests in the laboratory. Acceptance thresholds in the field are thus a more sensitive behavioral measure than PER responsiveness in the laboratory. Bees with low acceptance thresholds show significantly better acquisition and 24-h retention in olfactory learning in the laboratory compared to bees with high thresholds. In the learning protocol at the hive entrance bees learn without sucrose reward that a color cue signals an open entrance. In this experiment, bees with high sucrose acceptance thresholds showed significantly better learning and reversal learning than bees with low thresholds. These results demonstrate that sucrose acceptance thresholds affect only those forms of learning in which sucrose serves as the reward. The results also show that foraging behavior in the field is a good predictor for learning behavior in the field and in the laboratory.

On the idea of low-energy nuclear reactions in metallic lattices by producing neutrons from protons capturing "heavy" electrons

NASA Astrophysics Data System (ADS)

Tennfors, Einar

2013-02-01

The present article is a critical comment on Widom and Larsens speculations concerning low-energy nuclear reactions (LENR) based on spontaneous collective motion of protons in a room temperature metallic hydride lattice producing oscillating electric fields that renormalize the electron self-energy, adding significantly to the effective electron mass and enabling production of low-energy neutrons. The frequency and mean proton displacement estimated on the basis of neutron scattering from protons in palladium and applied to the Widom and Larsens model of the proton oscillations yield an electron mass enhancement less than one percent, far below the threshold for the proposed neutron production and even farther below the mass enhancement obtained by Widom and Larsen assuming a high charge density. Neutrons are not stopped by the Coulomb barrier, but the energy required for the neutron production is not low.

Towards highly stable polymer electronics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nikolka, Mark; Nasrallah, Iyad; Broch, Katharina; Sadhanala, Aditya; Hurhangee, Michael; McCulloch, Iain; Sirringhaus, Henning

2016-11-01

Due to their ease of processing, organic semiconductors are promising candidates for applications in high performance flexible displays and fast organic electronic circuitry. Recently, a lot of advances have been made on organic semiconductors exhibiting surprisingly high performance and carrier mobilities exceeding those of amorphous silicon. However, there remain significant concerns about their operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode (OLED) displays. Here, we report a novel technique for dramatically improving the operational stress stability, performance and uniformity of high mobility polymer field-effect transistors by the addition of specific small molecule additives to the polymer semiconductor film. We demonstrate for the first time polymer FETs that exhibit stable threshold voltages with threshold voltage shifts of less than 1V when subjected to a constant current operational stress for 1 day under conditions that are representative for applications in OLED active matrix displays. The approach constitutes in our view a technological breakthrough; it also makes the device characteristics independent of the atmosphere in which it is operated, causes a significant reduction in contact resistance and significantly improves device uniformity. We will discuss in detail the microscopic mechanism by which the molecular additives lead to this significant improvement in device performance and stability.

Multipactor threshold calculation of coaxial transmission lines in microwave applications with nonstationary statistical theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, S.; Li, Y.; Liu, C.

2015-08-15

This paper presents a statistical theory for the initial onset of multipactor breakdown in coaxial transmission lines, taking both the nonuniform electric field and random electron emission velocity into account. A general numerical method is first developed to construct the joint probability density function based on the approximate equation of the electron trajectory. The nonstationary dynamics of the multipactor process on both surfaces of coaxial lines are modelled based on the probability of various impacts and their corresponding secondary emission. The resonant assumption of the classical theory on the independent double-sided and single-sided impacts is replaced by the consideration ofmore » their interaction. As a result, the time evolutions of the electron population for exponential growth and absorption on both inner and outer conductor, in response to the applied voltage above and below the multipactor breakdown level, are obtained to investigate the exact mechanism of multipactor discharge in coaxial lines. Furthermore, the multipactor threshold predictions of the presented model are compared with experimental results using measured secondary emission yield of the tested samples which shows reasonable agreement. Finally, the detailed impact scenario reveals that single-surface multipactor is more likely to occur with a higher outer to inner conductor radius ratio.« less

Nonlinear Scattering of VLF Waves in the Radiation Belts

NASA Astrophysics Data System (ADS)

Crabtree, Chris; Rudakov, Leonid; Ganguli, Guru; Mithaiwala, Manish

2014-10-01

Electromagnetic VLF waves, such as whistler mode waves, control the lifetime of trapped electrons in the radiation belts by pitch-angle scattering. Since the pitch-angle scattering rate is a strong function of the wave properties, a solid understanding of VLF wave sources and propagation in the magnetosphere is critical to accurately calculate electron lifetimes. Nonlinear scattering (Nonlinear Landau Damping) is a mechanism that can strongly alter VLF wave propagation [Ganguli et al. 2010], primarily by altering the direction of propagation, and has not been accounted for in previous models of radiation belt dynamics. Laboratory results have confirmed the dramatic change in propagation direction when the pump wave has sufficient amplitude to exceed the nonlinear threshold [Tejero et al. 2014]. Recent results show that the threshold for nonlinear scattering can often be met by naturally occurring VLF waves in the magnetosphere, with wave magnetic fields of the order of 50-100 pT inside the plasmapause. Nonlinear scattering can then dramatically alter the macroscopic dynamics of waves in the radiation belts leading to the formation of a long-lasting wave-cavity [Crabtree et al. 2012] and, when amplification is present, a multi-pass amplifier [Ganguli et al. 2012]. By considering these effects, the lifetimes of electrons can be dramatically reduced. This work is supported by the Naval Research Laboratory base program.

On the threshold conditions for electron beam damage of asbestos amosite fibers in the transmission electron microscope (TEM).

PubMed

Martin, Joannie; Beauparlant, Martin; Sauvé, Sébastien; L'Espérance, Gilles

2016-12-01

Asbestos amosite fibers were investigated to evaluate the damage caused by a transmission electron microscope (TEM) electron beam. Since elemental x-ray intensity ratios obtained by energy dispersive x-ray spectroscopy (EDS) are commonly used for asbestos identification, the impact of beam damage on these ratios was evaluated. It was determined that the magnesium/silicon ratio best represented the damage caused to the fiber. Various tests showed that most fibers have a current density threshold above which the chemical composition of the fiber is modified. The value of this threshold current density varied depending on the fiber, regardless of fiber diameter, and in some cases could not be determined. The existence of a threshold electron dose was also demonstrated. This value was dependent on the current density used and can be increased by providing a recovery period between exposures to the electron beam. This study also established that the electron beam current is directly related to the damage rate above a current density of 165 A/cm 2 . The large number of different results obtained suggest, that in order to ensure that the amosite fibers are not damaged, analysis should be conducted below a current density of 100 A/cm 2 .

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

NASA Astrophysics Data System (ADS)

Ahn, Hyung-Woo; Seok Jeong, Doo; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun

2013-07-01

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.

Inclusion of Theta(12) dependence in the Coulomb-dipole theory of the ionization threshold

NASA Technical Reports Server (NTRS)

Srivastava, M. K.; Temkin, A.

1991-01-01

The Coulomb-dipole (CD) theory of the electron-atom impact-ionization threshold law is extended to include the full electronic repulsion. It is found that the threshold law is altered to a form in contrast to the previous angular-independent model. A second energy regime, is also identified wherein the 'threshold' law reverts to its angle-independent form. In the final part of the paper the dipole parameter is estimated to be about 28. This yields numerical estimates of E(a) = about 0.0003 and E(b) = about 0.25 eV.

Gamma ray pulsars

NASA Technical Reports Server (NTRS)

Oegelman, H.; Ayasli, S.; Hacinliyan, A.

1976-01-01

Recent data from the high energy gamma ray experiment have revealed the existence of four pulsars emitting photons above 35 MeV. An attempt is made to explain the gamma ray emission from these pulsars in terms of an electron-photon cascade that develops in the magnetosphere of the pulsar. Although there is very little material above the surface of the pulsar, the very intense magnetic fields correspond to many radiation lengths which cause electrons to emit photons via magnetic bremsstrahlung and these photons to pair produce. The cascade develops until the mean photon energy drops below the pair production threshold which happens to be in the gamma ray range; at this stage the photons break out from the source.

Measurements of the toroidal torque balance of error field penetration locked modes

DOE PAGES

Shiraki, Daisuke; Paz-Soldan, Carlos; Hanson, Jeremy M.; ...

2015-01-05

Here, detailed measurements from the DIII-D tokamak of the toroidal dynamics of error field penetration locked modes under the influence of slowly evolving external fields, enable study of the toroidal torques on the mode, including interaction with the intrinsic error field. The error field in these low density Ohmic discharges is well known based on the mode penetration threshold, allowing resonant and non-resonant torque effects to be distinguished. These m/n = 2/1 locked modes are found to be well described by a toroidal torque balance between the resonant interaction with n = 1 error fields, and a viscous torque inmore » the electron diamagnetic drift direction which is observed to scale as the square of the perturbed field due to the island. Fitting to this empirical torque balance allows a time-resolved measurement of the intrinsic error field of the device, providing evidence for a time-dependent error field in DIII-D due to ramping of the Ohmic coil current.« less

Quantitative measurement of electron number in nanosecond and picosecond laser-induced air breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yue; Sawyer, Jordan C.; Su, Liu

2016-05-07

Here we present quantitative measurements of total electron numbers in laser-induced air breakdown at pressures ranging from atmospheric to 40 bar{sub g} by 10 ns and 100 ps laser pulses. A quantifiable definition for the laser-induced breakdown threshold is identified by a sharp increase in the measurable total electron numbers via dielectric-calibrated coherent microwave scattering. For the 10 ns laser pulse, the threshold of laser-induced breakdown in atmospheric air is defined as the total electron number of ∼10{sup 6}. This breakdown threshold decreases with an increase of pressure and laser photon energy (shorter wavelength), which is consistent with the theory of initialmore » multiphoton ionization and subsequent avalanche processes. For the 100 ps laser pulse cases, a clear threshold is not present and only marginal pressure effects can be observed, which is due to the short pulse duration leading to stronger multiphoton ionization and minimal collisional avalanche ionization.« less

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model.

PubMed

Abid, Abubakar; O'Brien, Jonathan M; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R; Langer, Robert; Traverso, Giovanni

2017-04-27

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of -41.2, -36.1, and -34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body.

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

NASA Astrophysics Data System (ADS)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model

NASA Astrophysics Data System (ADS)

Abid, Abubakar; O'Brien, Jonathan M.; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R.; Langer, Robert; Traverso, Giovanni

2017-04-01

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of -41.2, -36.1, and -34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body.

Threshold Laws for Two-Electron Ejection Processes: A Still Controversial Problem in Atomic Physics

NASA Technical Reports Server (NTRS)

Temkin, Aaron

2003-01-01

This talk deals with collision processes of the following kind: (a) an ionizing collision of an electron with a neutral atom, (b) a photon incident of a negative ion resulting in two-electron ejection. In both cases the final state is a positive ion and two outgoing electrons, and in principle both processes should be governed by the same form of threshold law. It is generally conceded that this is one of the most difficult basic problems in nonrelativistic quantum mechanics. The standard treatment (due to Wannier) will be briefly reviewed in terms of the derivation of his well- known threshold law for the yield (Q) of positive ions vs. the excess energy (E): Q(sub w) varies as E(exp 1.127...). The derivation is a brilliant analysis based on Newton's equations, leading to the dominance of events in which the two electrons emerge on opposite sides of the residual ion with similar energies. In contrast, I will argue on the basis of quantum mechanical ideas that in the threshold limit the more likely outcome are events in which the electrons emerge with decidedly different energies, leading to a formally different (Coulomb-dipole) threshold law Q(sub CD) varies as E(1 + C sin(alpha ln(E)+mu)]/[ln(E)](exp 2). Additional aspects of that approach will be discussed . Some: experimental results will be presented, and more incisive predictions involving polarized projectiles and targets will be given.

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors.

PubMed

Doris, Sean E; Pierre, Adrien; Street, Robert A

2018-04-01

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single-transistor oscillators based on OECTs with dynamic time-varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system-level design of low-power OECT-based electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ponderomotive effects in multiphoton pair production

NASA Astrophysics Data System (ADS)

Kohlfürst, Christian; Alkofer, Reinhard

2018-02-01

The Dirac-Heisenberg-Wigner formalism is employed to investigate electron-positron pair production in cylindrically symmetric but otherwise spatially inhomogeneous, oscillating electric fields. The oscillation frequencies are hereby tuned to obtain multiphoton pair production in the nonperturbative threshold regime. An effective mass, as well as a trajectory-based semiclassical analysis, is introduced in order to interpret the numerical results for the distribution functions as well as for the particle yields and spectra. The results, including the asymptotic particle spectra, display clear signatures of ponderomotive forces.

The plasma undulator

NASA Astrophysics Data System (ADS)

Fedele, R.; Vaccaro, V. G.; Miano, G.

1990-01-01

The use of a large-amplitude plasma wave as an electrostatic undulator is presently analyzed on the basis of the existing theory of FEL magnetic undulator devices. An account is given of prospective plasma-undulator configurations; it is noted that very small wavelength electromagnetic radiation can be generated through the use of low energy electron beams. Thresholds for the plasma undulator-employing FEL action are discussed, and an analysis of the intrinsic efficiency of such a device is conducted with a view to its emittance and wake-field effects.

Quantitative comparisons of type 3 radio burst intensity and fast electron flux at 1 AU

NASA Technical Reports Server (NTRS)

Fitzenreiter, R. J.; Evans, L. G.; Lin, R. P.

1975-01-01

The flux of fast solar electrons and the intensity of the type 111 radio emission generated by these particles were compared at one AU. Two regimes were found in the generation of type 111 radiation: one where the radio intensity is linearly proportional to the electron flux, and another, which occurs above a threshold electron flux, where the radio intensity is approximately proportional to the 2.4 power of the electron flux. This threshold appears to reflect a transition to a different emission mechanism.

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2016-02-09

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

PubMed

He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

2017-01-01

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Earle K. Plyler Prize Lecture: The Three Pillars of Ultrafast Molecular Science - Time, Phase, Intensity

NASA Astrophysics Data System (ADS)

Stolow, Albert

We discuss the probing and control of molecular wavepacket dynamics in the context of three main `pillars' of light-matter interaction: time, phase, intensity. Time: Using short, coherent laser pulses and perturbative matter-field interactions, we study molecular wavepackets with a focus on the ultrafast non-Born-Oppenheimer dynamics, that is, the coupling of electronic and nuclear motions. Time-Resolved Photoelectron Spectroscopy (TRPES) is a powerful ultrafast probe of these processes in polyatomic molecules because it is sensitive both electronic and vibrational dynamics. Ideally, one would like to observe these ultrafast processes from the molecule's point of view - the Molecular Frame - thereby avoiding loss of information due to orientational averaging. This can be achieved by Time-Resolved Coincidence Imaging Spectroscopy (TRCIS) which images 3D recoil vectors of both photofragments and photoelectrons, in coincidence and as a function of time, permitting direct Molecular Frame imaging of valence electronic dynamics during a molecular dynamics. Phase: Using intermediate strength non-perturbative interactions, we apply the second order (polarizability) Non-Resonant Dynamic Stark Effect (NRDSE) to control molecular dynamics without any net absorption of light. NRDSE is also the interaction underlying molecular alignment and applies to field-free 1D of linear molecules and field-free 3D alignment of general (asymmetric) molecules. Using laser alignment, we can transiently fix a molecule in space, yielding a more general approach to direct Molecular Frame imaging of valence electronic dynamics during a chemical reaction. Intensity: In strong (ionizing) laser fields, a new laser-matter physics emerges for polyatomic systems wherein both the single active electron picture and the adiabatic electron response, both implicit in the standard 3-step models, can fail dramatically. This has important consequences for all attosecond strong field spectroscopies of polyatomic molecules, including high harmonic generation (HHG). We discuss an experimental method, Channel-Resolved Above Threshold Ionization (CRATI), which directly unveils the electronic channels participating in the attosecond molecular strong field ionization response [10]. This work was supported by the National Research Council of Canada and the Natural Sciences & Engineering Research Council.

Theory of charge density wave depinning by electromechanical effect

NASA Astrophysics Data System (ADS)

Quémerais, P.

2017-03-01

We discuss the first theory for the depinning of low-dimensional, incommensurate, charge density waves (CDWs) in the strong electron-phonon (e-p) regime. Arguing that most real CDWs systems invariably develop a gigantic dielectric constant (GDC) at very low frequencies, we propose an electromechanical mechanism which is based on a local field effect. At zero electric field and large enough e-p coupling the structures are naturally pinned by the lattice due to its discreteness, and develop modulation functions which are characterized by discontinuities. When the electric field is turned on, we show that it exists a finite threshold value for the electric field above which the discontinuities of the modulation functions vanish due to CDW deformation. The CDW is then free to move. The signature of this pinning/depinning transition as a function of the increasing electric field can be directly observed in the phonon spectrum by using inelastic neutrons or X-rays experiments.

Creating and optimizing interfaces for electric-field and photon-induced charge transfer.

PubMed

Park, Byoungnam; Whitham, Kevin; Cho, Jiung; Reichmanis, Elsa

2012-11-27

We create and optimize a structurally well-defined electron donor-acceptor planar heterojunction interface in which electric-field and/or photon-induced charge transfer occurs. Electric-field-induced charge transfer in the dark and exciton dissociation at a pentacene/PCBM interface were probed by in situ thickness-dependent threshold voltage shift measurements in field-effect transistor devices during the formation of the interface. Electric-field-induced charge transfer at the interface in the dark is correlated with development of the pentacene accumulation layer close to PCBM, that is, including interface area, and dielectric relaxation time in PCBM. Further, we demonstrate an in situ test structure that allows probing of both exciton diffusion length and charge transport properties, crucial for optimizing optoelectronic devices. Competition between the optical absorption length and the exciton diffusion length in pentacene governs exciton dissociation at the interface. Charge transfer mechanisms in the dark and under illumination are detailed.

Recent progress on beam stability study in the PSR

NASA Astrophysics Data System (ADS)

Wang, Tai-Sen F.; Channell, Paul J.; Cooper, Richard K.; Fitzgerald, Daniel H.; Hardek, Tom; Hutson, Richard; Jason, Andrew J.; Macek, Robert J.; Plum, Michael A.; Wilkinson, Carol

A fast transverse instability has been observed in the Los Alamos Proton Storage Ring (PSR) when the injected beam intensity reaches more than 2 (times) 10(exp 13) protons per pulse. Understanding the cause and control of this instability has taken on new importance as the neutron-scattering community considers the next generation of accelerator-driven spallation-neutron sources, which call for peak-proton intensities of 10(exp 14) per pulse or higher. Previous observations and theoretical studies indicate that the instability in the PSR is most likely driven by electrons trapped within the proton beam. Recent studies using an experimental electron-clearing system and voltage-biased pinger-electrodes for electron clearing and collection support this hypothesis. Experiments have also been performed to study the instability threshold when varying the electron production rate. Theoretical studies include a computer simulation of a simplified model for the e -- p instability and the investigation of possible electron confinement in the ring-element magnetic fields. This paper reports some recent results from these studies.

Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties

NASA Astrophysics Data System (ADS)

Song, Meng; Xu, Peng; Song, Yenan; Wang, Xu; Li, Zhenhua; Shang, Xuefu; Wu, Huizhen; Zhao, Pei; Wang, Miao

2015-09-01

Integrating carbon nanotubes (CNTs) and graphene into hybrid structures provides a novel approach to three dimensional (3D) materials with advantageous properties. Here we present a water-processing method to create integrated CNT/graphene hybrids and test their field emission properties. With an optimized mass ratio of CNTs to graphene, the hybrid shows a significantly enhanced field emission performance, such as turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum current density of 0.1 mA/cm2, and field enhancement factor of ˜1.3 × 104. The optimized mass ratio for field emission emphasizes the importance of both CNTs and graphene in the hybrid. We also hypothesize a possible mechanism for this enhanced field emission performance from the CNT/graphene hybrid. During the solution treatment, graphene oxide behaves as surfactant sheets for CNTs to form a well dispersed solution, which leads to a better organized 3D structure with more conducting channels for electron transport.

Positronium collisions with atoms and molecules

NASA Astrophysics Data System (ADS)

Fabrikant, I. I.; Gribakin, G. F.; Wilde, R. S.

2017-11-01

We review recent theoretical efforts to explain observed similarities between electron-atom and positronium(Ps)-atom scattering which also extends to molecular targets. In the range of the projectile velocities above the threshold for Ps ionization (break-up) this similarity can be explained in terms of quasi-free electron scattering and impulse approximation. However, for lower Ps velocities more sophisticated methods should be developed. Our calculations of Ps scattering by heavy noble-gas atoms agree well with experiments at Ps velocities above the Ps ionization threshold. However, in contrast to electron scattering cross sections, at lower velocities they exhibit maxima whereas the experimental cross sections tend to decrease toward lower velocities indicating the same similarity with electron scattering cross section observed above the threshold. Our preliminary results for Ps-N2 scattering confirm experimental observation of a resonance similar to the ∏ g resonance in electron-N2 scattering.

Correlated electron-nuclear dynamics in above-threshold multiphoton ionization of asymmetric molecule.

PubMed

Wang, Zhuo; Li, Min; Zhou, Yueming; Lan, Pengfei; Lu, Peixiang

2017-02-20

The partition of the photon energy into the subsystems of molecules determines many photon-induced chemical and physical dynamics in laser-molecule interactions. The electron-nuclear energy sharing from multiphoton ionization of molecules has been used to uncover the correlated dynamics of the electron and fragments. However, most previous studies focus on symmetric molecules. Here we study the electron-nuclear energy sharing in strong-field photoionization of HeH 2+ by solving the one-dimensional time-dependent Schrödinger equation (TDSE). Compared with symmetric molecules, the joint electron-nuclear energy spectrum (JES) of HeH 2+ reveals an anomalous energy shift at certain nuclear energies, while it disappears at higher and lower nuclear energies. Through tracing the time evolution of the wavepacket of bound states, we identify that this energy shift originates from the joint effect of the Stark shift, associated with the permanent dipole, and the Autler-Townes effect due to the coupling of the 2pσ and 2sσ states in strong fields. The energy shift in the JES appears at certain nuclear distances only when both Stark effect and Autler-Townes effect play important roles. We further demonstrate that the electron-nuclei energy sharing can be controlled by varying laser intensity for asymmetric molecules, providing alternative approaches to manipulate photochemical reactions for more complex molecules.

Quasi-Particle Relaxation and Quantum Femtosecond Magnetism in Non-Equilibrium Phases of Insulating Manganites

NASA Astrophysics Data System (ADS)

Perakis, Ilias; Kapetanakis, Myron; Lingos, Panagiotis; Barmparis, George; Patz, A.; Li, T.; Wang, Jigang

We study the role of spin quantum fluctuations driven by photoelectrons during 100fs photo-excitation of colossal magneto-resistive manganites in anti-ferromagnetic (AFM) charge-ordered insulating states with Jahn-Teller distortions. Our mean-field calculation of composite fermion excitations demonstrates that spin fluctuations reduce the energy gap by quasi-instantaneously deforming the AFM background, thus opening a conductive electronic pathway via FM correlation. We obtain two quasi-particle bands with distinct spin-charge dynamics and dependence on lattice distortions. To connect with fs-resolved spectroscopy experiments, we note the emergence of fs magnetization in the low-temperature magneto-optical signal, with threshold dependence on laser intensity characteristic of a photo-induced phase transition. Simultaneously, the differential reflectivity shows bi-exponential relaxation, with fs component, small at low intensity, exceeding ps component above threshold for fs AFM-to-FM switching. This suggests the emergence of a non-equilibrium metallic FM phase prior to establishment of a new lattice structure, linked with quantum magnetism via spin/charge/lattice couplings for weak magnetic fields.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, Yuri, E-mail: yufi55@mail.ru; National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050; National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electronmore » beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.« less

40 CFR 98.91 - Reporting threshold.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 22 2012-07-01 2012-07-01 false Reporting threshold. 98.91 Section 98...) MANDATORY GREENHOUSE GAS REPORTING Electronics Manufacturing § 98.91 Reporting threshold. (a) You must... year emission threshold in § 98.2(a)(2), follow the requirements of § 98.2(b), with one exception...

Threshold law for electron-atom impact ionization

NASA Technical Reports Server (NTRS)

Temkin, A.

1982-01-01

A derivation of the explicit form of the threshold law for electron impact ionization of atoms is presented, based on the Coulomb-dipole theory. The important generalization is made of using a dipole function whose moment is the dipole moment formed by an inner electron and the nucleus. The result is a modulated quasi-linear law for the yield of positive ions which applies to positron-atom impact ionization.

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

2002-01-01

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Energy limits of electron acceleration in the plasma sheet during substorms: A case study with the Magnetospheric Multiscale (MMS) mission

NASA Astrophysics Data System (ADS)

Turner, D. L.; Fennell, J. F.; Blake, J. B.; Clemmons, J. H.; Mauk, B. H.; Cohen, I. J.; Jaynes, A. N.; Craft, J. V.; Wilder, F. D.; Baker, D. N.; Reeves, G. D.; Gershman, D. J.; Avanov, L. A.; Dorelli, J. C.; Giles, B. L.; Pollock, C. J.; Schmid, D.; Nakamura, R.; Strangeway, R. J.; Russell, C. T.; Artemyev, A. V.; Runov, A.; Angelopoulos, V.; Spence, H. E.; Torbert, R. B.; Burch, J. L.

2016-08-01

We present multipoint observations of earthward moving dipolarization fronts and energetic particle injections from NASA's Magnetospheric Multiscale mission with a focus on electron acceleration. From a case study during a substorm on 02 August 2015, we find that electrons are only accelerated over a finite energy range, from a lower energy threshold at 7-9 keV up to an upper energy cutoff in the hundreds of keV range. At energies lower than the threshold energy, electron fluxes decrease, potentially due to precipitation by strong parallel electrostatic wavefields or initial sources in the lobes. Electrons at energies higher than the threshold are accelerated cumulatively by a series of impulsive magnetic dipolarization events. This case demonstrates how the upper energy cutoff increases, in this case from 130 keV to >500 keV, with each dipolarization/injection during sustained activity. We also present a simple model accounting for these energy limits that reveals that electron energization is dominated by betatron acceleration.

Energy Limits of Electron Acceleration in the Plasma Sheet During Substorms: A Case Study with the Magnetospheric Multiscale (MMS) Mission

NASA Technical Reports Server (NTRS)

Turner, D. L.; Fennell, J. F.; Blake, J. B.; Clemmons, J. H.; Mauk, B. H.; Cohen, I. J.; Jaynes, A. N.; Craft, J. V.; Wilder, F. D.; Baker, D. N.;

Laser-induced damage of coatings on Yb:YAG crystals at cryogenic condition

NASA Astrophysics Data System (ADS)

Wang, He; Zhang, Weili; Chen, Shunli; Zhu, Meiping; He, Hongbo; Fan, Zhengxiu

2011-12-01

As large amounts of heat need to be dissipated during laser operation, some diode pumped solid state lasers (DPSSL), especially Yb:YAG laser, operate at cryogenic condition. This work investigated the laser induced damage of coatings (high-reflective and anti-reflective coatings) on Yb:YAG crystals at cryogenic temperature and room temperature. The results show that the damage threshold of coatings at cryogenic temperature is lower than the one at room temperature. Field-emission scanning electron microscopy (FESEM), optical profiler, step profiler and Atomic force microscope (AFM) were used to obtain the damage morphology, size and depth. Taking alteration of physical parameters, microstructure of coatings and the environmental pollution into consideration, we analyzed the key factor of lowering the coating damage threshold at cryogenic conditions. The results are important to understand the mechanisms leading to damage at cryogenic condition.

Atomic photoionization processes under magnification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lepine, F.; Bordas, Ch.; Nicole, C.

2004-09-01

Recently, classical simulations of threshold photoionization in the presence of an electric field have shown that a clear distinction between direct and indirect trajectories followed by the outgoing electron can be observed in the patterns of electron impacts on a two-dimensional detector. Subsequently, slow photoelectron imaging experiments have been reported where this distinction could be observed in atomic xenon. Furthermore, using a magnifying electrostatic lens to improve the velocity-map imaging technique, oscillatory patterns were observed modulating the classical envelope that was measured in the experiments of Nicole et al. [Phys. Rev. Lett. 88, 133001 (2002)]. This extension of slow photoelectronmore » imaging, called photoionization microscopy, relies on the existence of interferences between various trajectories by which the electron moves from the atom to the plane of observation. In this article we present the main experimental results obtained both in slow photoelectron imaging and in photoionization microscopy. The formation of the interference pattern is discussed in the framework of a semiclassical model that is described in detail elsewhere. The qualitative information that can be drawn from the experiments is discussed, and the potential applications of photoionization microscopy are considered. Particular attention is paid to the role of continuum Stark resonances that appear between the saddle point in the Coulomb+dc field potential and the field-free ionization limit.« less

Sequential and direct ionic excitation in the strong-field ionization of 1-butene molecules.

PubMed

Schell, Felix; Boguslavskiy, Andrey E; Schulz, Claus Peter; Patchkovskii, Serguei; Vrakking, Marc J J; Stolow, Albert; Mikosch, Jochen

2018-05-18

We study the Strong-Field Ionization (SFI) of the hydrocarbon 1-butene as a function of wavelength using photoion-photoelectron covariance and coincidence spectroscopy. We observe a striking transition in the fragment-associated photoelectron spectra: from a single Above Threshold Ionization (ATI) progression for photon energies less than the cation D0-D1 gap to two ATI progressions for a photon energy greater than this gap. For the first case, electronically excited cations are created by SFI populating the ground cationic state D0, followed by sequential post-ionization excitation. For the second case, direct sub-cycle SFI to the D1 excited cation state contributes significantly. Our experiments access ionization dynamics in a regime where strong-field and resonance-enhanced processes can interplay.

Strong-field ionization of xenon dimers: The effect of two-equivalent-center interference and of driving ionic transitions

NASA Astrophysics Data System (ADS)

Zhang, C.; Feng, T.; Raabe, N.; Rottke, H.

2018-02-01

Strong-field ionization (SFI) of the homonuclear noble gas dimer Xe2 is investigated and compared with SFI of the Xe atom and of the ArXe heteronuclear dimer by using ultrashort Ti:sapphire laser pulses and photoelectron momentum spectroscopy. The large separation of the two nuclei of the dimer allows the study of two-equivalent-center interference effects on the photoelectron momentum distribution. Comparing the experimental results with a new model calculation, which is based on the strong-field approximation, actually reveals the influence of interference. Moreover, the comparison indicates that the presence of closely spaced gerade and ungerade electronic state pairs of the Xe2 + ion at the Xe2 ionization threshold, which are strongly dipole coupled, affects the photoelectron momentum distribution.

From innervation density to tactile acuity: 1. Spatial representation.

PubMed

Brown, Paul B; Koerber, H Richard; Millecchia, Ronald

2004-06-11

We tested the hypothesis that the population receptive field representation (a superposition of the excitatory receptive field areas of cells responding to a tactile stimulus) provides spatial information sufficient to mediate one measure of static tactile acuity. In psychophysical tests, two-point discrimination thresholds on the hindlimbs of adult cats varied as a function of stimulus location and orientation, as they do in humans. A statistical model of the excitatory low threshold mechanoreceptive fields of spinocervical, postsynaptic dorsal column and spinothalamic tract neurons was used to simulate the population receptive field representations in this neural population of the one- and two-point stimuli used in the psychophysical experiments. The simulated and observed thresholds were highly correlated. Simulated and observed thresholds' relations to physiological and anatomical variables such as stimulus location and orientation, receptive field size and shape, map scale, and innervation density were strikingly similar. Simulated and observed threshold variations with receptive field size and map scale obeyed simple relationships predicted by the signal detection model, and were statistically indistinguishable from each other. The population receptive field representation therefore contains information sufficient for this discrimination.

`Getting stuck' in analogue electronics: threshold concepts as an explanatory model

NASA Astrophysics Data System (ADS)

Harlow, A.; Scott, J.; Peter, M.; Cowie, B.

2011-10-01

Could the challenge of mastering threshold concepts be a potential factor that influences a student's decision to continue in electronics engineering? This was the question that led to a collaborative research project between educational researchers and the Faculty of Engineering in a New Zealand university. This paper deals exclusively with the qualitative data from this project, which was designed to investigate the high attrition rate of students taking introductory electronics in a New Zealand university. The affordances of the various teaching opportunities and the barriers that students perceived are examined in the light of recent international research in the area of threshold concepts and transformational learning. Suggestions are made to help students move forward in their thinking, without compromising the need for maintaining the element of intellectual uncertainty that is crucial for tertiary teaching. The issue of the timing of assessments as a measure of conceptual development or the crossing of thresholds is raised.

InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm{sup 2} at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dallner, Matthias; Hau, Florian; Kamp, Martin

2015-01-26

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm{sup 2} are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm{sup 2} at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, amore » further reduction of the threshold current density to 800 A/cm{sup 2} was achieved for a 30 stage device.« less

Broadband photosensor with a tunable frequency range, built on the basis of nanoscale carbon structure with field localization

NASA Astrophysics Data System (ADS)

Yakunin, Alexander N.; Akchurin, Garif G.; Aban'shin, Nikolay P.; Gorfinkel, Boris I.

2014-03-01

The work is devoted to the development of a new direction in creating of broadband photo sensors which distinctive feature is the possibility of dynamic adjustment of operating frequency range. The author's results of study of red threshold control of classic photoelectric effect were the basis for the work implementation. This effect was predicted theoretically and observed experimentally during irradiation of nanoscale carbon structure of planar-edge type by stream of low-energy photons. The variation of the accelerating voltage within a small range allows you to change photoelectric threshold for carbon in a wide range - from UV to IR. This is the consequence of the localization of electrostatic field at tip of the blade planar structure and of changes in the conditions of non-equilibrium electrons tunneling from the boundary surface of the cathode into the vacuum. The generation of nonequilibrium electrons in the carbon film thickness of 20 nm has a high speed which provides high performance of photodetector. The features of the use of nanoscale carbon structure photocurrent registration as in the prethreshold regime, and in the mode of field emission existence are discussed. The results of simulation and experimental examination of photosensor samples are given. It is shown that the observed effect is a single-photon tunneling. This in combination with the possibility of highspeed dynamic tuning determines the good perspectives for creation of new devices working in the mode of select multiple operating spectral bands for the signal recording. The architecture of such devices is expected to be significantly simpler than the conventional ones, based on the use of tunable filters.

Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1-xNx alloys: The appearance of a mobility edge

NASA Astrophysics Data System (ADS)

Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

2012-07-01

Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs1-xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

Quantitative comparisons of type III radio burst intensity and fast electron flux at 1 AU

NASA Technical Reports Server (NTRS)

Fitzenreiter, R. J.; Evans, L. G.; Lin, R. P.

1976-01-01

We compare the flux of fast solar electrons and the intensity of the type III radio emission generated by these particles at 1 AU. We find that there are two regimes in the generation of type III radiation: one where the radio intensity is linearly proportional to the electron flux, and the second regime, which occurs above a threshold electron flux, where the radio intensity is proportional to the approximately 2.4 power of the electron flux. This threshold appears to reflect a transition to a different emission mechanism.

3D SAPIV particle field reconstruction method based on adaptive threshold.

PubMed

Qu, Xiangju; Song, Yang; Jin, Ying; Li, Zhenhua; Wang, Xuezhen; Guo, ZhenYan; Ji, Yunjing; He, Anzhi

2018-03-01

Particle image velocimetry (PIV) is a necessary flow field diagnostic technique that provides instantaneous velocimetry information non-intrusively. Three-dimensional (3D) PIV methods can supply the full understanding of a 3D structure, the complete stress tensor, and the vorticity vector in the complex flows. In synthetic aperture particle image velocimetry (SAPIV), the flow field can be measured with large particle intensities from the same direction by different cameras. During SAPIV particle reconstruction, particles are commonly reconstructed by manually setting a threshold to filter out unfocused particles in the refocused images. In this paper, the particle intensity distribution in refocused images is analyzed, and a SAPIV particle field reconstruction method based on an adaptive threshold is presented. By using the adaptive threshold to filter the 3D measurement volume integrally, the three-dimensional location information of the focused particles can be reconstructed. The cross correlations between images captured from cameras and images projected by the reconstructed particle field are calculated for different threshold values. The optimal threshold is determined by cubic curve fitting and is defined as the threshold value that causes the correlation coefficient to reach its maximum. The numerical simulation of a 16-camera array and a particle field at two adjacent time events quantitatively evaluates the performance of the proposed method. An experimental system consisting of a camera array of 16 cameras was used to reconstruct the four adjacent frames in a vortex flow field. The results show that the proposed reconstruction method can effectively reconstruct the 3D particle fields.

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Tang, Fengzai; Lee, Kean B.; Guiney, Ivor; Frentrup, Martin; Barnard, Jonathan S.; Divitini, Giorgio; Zaidi, Zaffar H.; Martin, Tomas L.; Bagot, Paul A.; Moody, Michael P.; Humphreys, Colin J.; Houston, Peter A.; Oliver, Rachel A.; Wallis, David J.

2018-01-01

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.

The hydrogen molecule under the reaction microscope: single photon double ionization at maximum cross section and threshold (doubly differential cross sections)

DOE PAGES

Weber, Thorsten; Foucar, Lutz; Jahnke, Till; ...

2017-07-07

In this paper, we studied the photo double ionization of hydrogen molecules in the threshold region (50 eV) and the complete photo fragmentation of deuterium molecules at maximum cross section (75 eV) with single photons (linearly polarized) from the Advanced Light Source, using the reaction microscope imaging technique. The 3D-momentum vectors of two recoiling ions and up to two electrons were measured in coincidence. We present the kinetic energy sharing between the electrons and ions, the relative electron momenta, the azimuthal and polar angular distributions of the electrons in the body-fixed frame. We also present the dependency of the kineticmore » energy release in the Coulomb explosion of the two nuclei on the electron emission patterns. We find that the electronic emission in the body-fixed frame is strongly influenced by the orientation of the molecular axis to the polarization vector and the internuclear distance as well as the electronic energy sharing. Finally, traces of a possible breakdown of the Born–Oppenheimer approximation are observed near threshold.« less

The hydrogen molecule under the reaction microscope: single photon double ionization at maximum cross section and threshold (doubly differential cross sections)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weber, Thorsten; Foucar, Lutz; Jahnke, Till

In this paper, we studied the photo double ionization of hydrogen molecules in the threshold region (50 eV) and the complete photo fragmentation of deuterium molecules at maximum cross section (75 eV) with single photons (linearly polarized) from the Advanced Light Source, using the reaction microscope imaging technique. The 3D-momentum vectors of two recoiling ions and up to two electrons were measured in coincidence. We present the kinetic energy sharing between the electrons and ions, the relative electron momenta, the azimuthal and polar angular distributions of the electrons in the body-fixed frame. We also present the dependency of the kineticmore » energy release in the Coulomb explosion of the two nuclei on the electron emission patterns. We find that the electronic emission in the body-fixed frame is strongly influenced by the orientation of the molecular axis to the polarization vector and the internuclear distance as well as the electronic energy sharing. Finally, traces of a possible breakdown of the Born–Oppenheimer approximation are observed near threshold.« less

New method for characterizing paper coating structures using argon ion beam milling and field emission scanning electron microscopy.

PubMed

Dahlström, C; Allem, R; Uesaka, T

2011-02-01

We have developed a new method for characterizing microstructures of paper coating using argon ion beam milling technique and field emission scanning electron microscopy. The combination of these two techniques produces extremely high-quality images with very few artefacts, which are particularly suited for quantitative analyses of coating structures. A new evaluation method has been developed by using marker-controlled watershed segmentation technique of the secondary electron images. The high-quality secondary electron images with well-defined pores makes it possible to use this semi-automatic segmentation method. One advantage of using secondary electron images instead of backscattered electron images is being able to avoid possible overestimation of the porosity because of the signal depth. A comparison was made between the new method and the conventional method using greyscale histogram thresholding of backscattered electron images. The results showed that the conventional method overestimated the pore area by 20% and detected around 5% more pores than the new method. As examples of the application of the new method, we have investigated the distributions of coating binders, and the relationship between local coating porosity and base sheet structures. The technique revealed, for the first time with direct evidence, the long-suspected coating non-uniformity, i.e. binder migration, and the correlation between coating porosity versus base sheet mass density, in a straightforward way. © 2010 The Authors Journal compilation © 2010 The Royal Microscopical Society.

Acceleration of cosmic rays by turbulence during reconnection events

NASA Astrophysics Data System (ADS)

Drake, Jim

2007-05-01

A Fermi-like model for energetic electron production during magnetic reconnection is described that converts a substantial fraction of released magnetic energy into energetic electrons [1]. Magnetic reconnection with a guide field leads to the growth and dynamics of multiple magnetic islands rather than a single large x-line. Electrons trapped within islands gain energy as they reflect from ends of contracting magnetic islands. The resulting rate of energy gain dominates that from parallel electric fields. The pressure from energetic electrons rises rapidly until the rate of electron energy gain balances the rate of magnetic energy release, establishing for the first time a link between the energy gain of electrons and the released magnetic energy. The energetic particle pressure therefore throttles the rate of reconnection. A transport equation for the distribution of energetic particles, including their feedback on island contraction, is obtained by averaging over the particle interaction with many islands. The steady state solutions in reconnection geometry result from convective losses balancing the Fermi drive. At high energy distribution functions take the form of a powerlaw whose spectral index depends only on the initial electron β, lower (higher) β producing harder (softer) spectra. The spectral index matches that seen in recent Wind spacecraft observations in the Earth's magnetotail. Harder spectra are predicted for the low β conditions of the solar corona or other astrophysical systems. Ions can be similarly accelerated if they are above an energy threshold. 1. J. F. Drake, M. Swisdak, H. Che and M. Shay, Nature 443, 553, 2006.

Resonant inelastic collisions of electrons with diatomic molecules

NASA Astrophysics Data System (ADS)

Houfek, Karel

2012-05-01

In this contribution we give a review of applications of the nonlocal resonance theory which has been successfully used for treating the nuclear dynamics of low-energy electron collisions with diatomic molecules over several decades. We give examples and brief explanations of various structures observed in the cross sections of vibrational excitation and dissociative electron attachment to diatomic molecules such as threshold peaks, boomerang oscillations below the dissociative attachment threshold, or outer-well resonances.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Performance analysis and simulation of vertical gallium nitride nanowire transistors

NASA Astrophysics Data System (ADS)

Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

2018-06-01

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

76 FR 55865 - Fisheries Off West Coast States; Notice of Availability for Secretarial Amendment 1 to the...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-09

... methods: Electronic Submission: Submit all electronic public comments via the Federal e-Rulemaking Portal http://www.regulations.gov . To submit comments via the e-Rulemaking Portal, first click the ``submit a...-frame. The overfished threshold would also be revised. The overfished threshold or minimum stock size...

"Getting Stuck" in Analogue Electronics: Threshold Concepts as an Explanatory Model

ERIC Educational Resources Information Center

Harlow, A.; Scott, J.; Peter, M.; Cowie, B.

2011-01-01

Could the challenge of mastering threshold concepts be a potential factor that influences a student's decision to continue in electronics engineering? This was the question that led to a collaborative research project between educational researchers and the Faculty of Engineering in a New Zealand university. This paper deals exclusively with the…

Field hearing measurements of the Atlantic sharpnose shark Rhizoprionodon terraenovae.

PubMed

Casper, B M; Mann, D A

2009-12-01

Field measurements of hearing thresholds were obtained from the Atlantic sharpnose shark Rhizoprionodon terraenovae using the auditory evoked potential method (AEP). The fish had most sensitive hearing at 20 Hz, the lowest frequency tested, with decreasing sensitivity at higher frequencies. Hearing thresholds were lower than AEP thresholds previously measured for the nurse shark Ginglymostoma cirratum and yellow stingray Urobatis jamaicensis at frequencies <200 Hz, and similar at 200 Hz and above. Rhizoprionodon terraenovae represents the closest comparison in terms of pelagic lifestyle to the sharks which have been observed in acoustic field attraction experiments. The sound pressure levels that would be equivalent to the particle acceleration thresholds of R. terraenovae were much higher than the sound levels which attracted closely related sharks suggesting a discrepancy between the hearing threshold experiments and the field attraction experiments.

Density scaling on n  =  1 error field penetration in ohmically heated discharges in EAST

NASA Astrophysics Data System (ADS)

Wang, Hui-Hui; Sun, You-Wen; Shi, Tong-Hui; Zang, Qing; Liu, Yue-Qiang; Yang, Xu; Gu, Shuai; He, Kai-Yang; Gu, Xiang; Qian, Jin-Ping; Shen, Biao; Luo, Zheng-Ping; Chu, Nan; Jia, Man-Ni; Sheng, Zhi-Cai; Liu, Hai-Qing; Gong, Xian-Zu; Wan, Bao-Nian; Contributors, EAST

2018-05-01

Density scaling of error field penetration in EAST is investigated with different n  =  1 magnetic perturbation coil configurations in ohmically heated discharges. The density scalings of error field penetration thresholds under two magnetic perturbation spectra are br\\propto n_e0.5 and br\\propto n_e0.6 , where b r is the error field and n e is the line averaged electron density. One difficulty in understanding the density scaling is that key parameters other than density in determining the field penetration process may also be changed when the plasma density changes. Therefore, they should be determined from experiments. The estimated theoretical analysis (br\\propto n_e0.54 in lower density region and br\\propto n_e0.40 in higher density region), using the density dependence of viscosity diffusion time, electron temperature and mode frequency measured from the experiments, is consistent with the observed scaling. One of the key points to reproduce the observed scaling in EAST is that the viscosity diffusion time estimated from energy confinement time is almost constant. It means that the plasma confinement lies in saturation ohmic confinement regime rather than the linear Neo-Alcator regime causing weak density dependence in the previous theoretical studies.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Wavelength-scale photonic-crystal laser formed by electron-beam-induced nano-block deposition.

PubMed

Seo, Min-Kyo; Kang, Ju-Hyung; Kim, Myung-Ki; Ahn, Byeong-Hyeon; Kim, Ju-Young; Jeong, Kwang-Yong; Park, Hong-Gyu; Lee, Yong-Hee

2009-04-13

A wavelength-scale cavity is generated by printing a carbonaceous nano-block on a photonic-crystal waveguide. The nanometer-size carbonaceous block is grown at a pre-determined region by the electron-beam-induced deposition method. The wavelength-scale photonic-crystal cavity operates as a single mode laser, near 1550 nm with threshold of approximately 100 microW at room temperature. Finite-difference time-domain computations show that a high-quality-factor cavity mode is defined around the nano-block with resonant wavelength slightly longer than the dispersion-edge of the photonic-crystal waveguide. Measured near-field images exhibit photon distribution well-localized in the proximity of the printed nano-block. Linearly-polarized emission along the vertical direction is also observed.

Characterization of local thermodynamic equilibrium in a laser-induced aluminum alloy plasma.

PubMed

Zhang, Yong; Zhao, Zhenyang; Xu, Tao; Niu, GuangHui; Liu, Ying; Duan, Yixiang

2016-04-01

The electron temperature was evaluated using the line-to-continuum ratio method, and whether the plasma was close to the local thermodynamic equilibrium (LTE) state was investigated in detail. The results showed that approximately 5 μs after the plasma formed, the changes in the electron and excitation temperatures, which were determined using a Boltzmann plot, overlapped in the 15% error range, which indicated that the LTE state was reached. The recombination of electrons and ions and the free electron expansion process led to the deviation from the LTE state. The plasma's expansion rate slowed over time, and when the expansion time was close to the ionization equilibrium time, the LTE state was almost reached. The McWhirter criterion was adopted to calculate the threshold electron density for different species, and the results showed that experimental electron density was greater than the threshold electron density, which meant that the LTE state may have existed. However, for the nonmetal element N, the threshold electron density was greater than the value experimental value approximately 0.8 μs after the plasma formed, which meant that LTE state did not exist for N.

Field emission and photoluminescence characteristics of ZnS nanowires via vapor phase growth

NASA Astrophysics Data System (ADS)

Chang, Yongqin; Wang, Mingwei; Chen, Xihong; Ni, Saili; Qiang, Weijing

2007-05-01

Large-area ZnS nanowires were synthesized through a vapor phase deposition method. X-ray diffraction and electron microscopy results show that the products are composed of single crystalline ZnS nanowires with a cubic structure. The nanowires have sharp tips and are distributed uniformly on silicon substrates. The diameter of the bases is in the range of 320-530 nm and that of the tips is around 20-30 nm. The strong ultraviolet emission in the photoluminescence spectra also demonstrates that the ZnS nanowires are of high crystalline perfection. Field emission measurements reveal that the ZnS nanowires have a fairly low threshold field, which may be ascribed to their very sharp tips, rough surfaces and high crystal quality. The perfect field emission ability of the ZnS nanowires makes them a promising candidate for the fabrication of flexible cold cathodes.

Spectroscopy of the UO+2 cation and the delayed ionization of UO2.

PubMed

Merritt, Jeremy M; Han, Jiande; Heaven, Michael C

2008-02-28

Vibronically resolved spectra for the UO+2 cation have been recorded using the pulsed field ionization zero electron kinetic energy (PFI-ZEKE) technique. For the ground state, long progressions in both the bending and symmetric stretch vibrations were observed. Bend and stretch progressions of the first electronically excited state were also observed, and the origin was found at an energy of 2678 cm(-1) above the ground state zero-point level. This observation is consistent with a recent theoretical prediction [Infante et al., J. Chem. Phys. 127, 124308 (2007)]. The ionization energy for UO2, derived from the PFI-ZEKE spectrum, namely, 6.127(1) eV, is in excellent agreement with the value obtained from an earlier photoionization efficiency measurement. Delayed ionization of UO2 in the gas phase has been reported previously [Han et al., J. Chem. Phys. 120, 5155 (2004)]. Here, we extend the characterization of the delayed ionization process by performing a quantitative study of the ionization rate as a function of the energy above the ionization threshold. The ionization rate was found to be 5 x 10(6) s(-1) at threshold, and increased linearly with increasing energy in the range investigated (0-1200 cm(-1)).

Simulation of angular-resolved RABBITT measurements in noble-gas atoms

NASA Astrophysics Data System (ADS)

Bray, Alexander W.; Naseem, Faiza; Kheifets, Anatoli S.

2018-06-01

We simulate angular-resolved RABBITT (reconstruction of attosecond beating by interference of two-photon transitions) measurements on valence shells of noble-gas atoms (Ne, Ar, Kr, and Xe). Our nonperturbative numerical simulation is based on solution of the time-dependent Schrödinger equation (TDSE) for a target atom driven by an ionizing XUV and dressing IR fields. From these simulations we extract the angular-dependent magnitude and phase of the RABBITT oscillations and deduce the corresponding angular anisotropy β parameter and Wigner time delay τW for the single XUV photon absorption that initiates the RABBITT process. Said β and τW parameters are compared with calculations in the random-phase approximation with exchange (RPAE), which includes intershell correlation. This comparison is used to test various effective potentials employed in the one-electron TDSE. In lighter atoms (Ne and Ar), several effective potentials are found to provide accurate simulations of RABBITT measurements for a wide range of photon energies up to 100 eV above the valence-shell threshold. In heavier atoms (Kr and Xe), the onset of strong correlation with the d shell restricts the validity of the single active electron approximation to several tens of eV above the valence-shell threshold.

Psychophysical Measurement of Rod and Cone Thresholds in Stargardt Disease with Full-Field Stimuli

PubMed Central

Collison, Frederick T.; Fishman, Gerald A.; McAnany, J. Jason; Zernant, Jana; Allikmets, Rando

2014-01-01

Purpose To investigate psychophysical thresholds in Stargardt disease with the full-field stimulus test (FST). Methods Visual acuity (VA), spectral-domain optical coherence tomography (SD-OCT), full-field electroretinogram (ERG), and FST measurements were made in one eye of 24 patients with Stargardt disease. Dark-adapted rod FST thresholds were measured with short-wavelength stimuli, and cone FST thresholds were obtained from the cone plateau phase of dark adaptation using long-wavelength stimuli. Correlation coefficients were calculated for FST thresholds versus macular thickness, VA and ERG amplitudes. Results Stargardt patient FST cone thresholds correlated significantly with VA, macular thickness, and ERG cone-response amplitudes (all P<0.01). The patients’ FST rod thresholds correlated with ERG rod-response amplitudes (P<0.01), but not macular thickness (P=0.05). All Stargardt disease patients with flecks confined to the macula and most of the patients with flecks extending outside of the macula had normal FST thresholds. All patients with extramacular atrophic changes had elevated FST cone thresholds and most had elevated FST rod thresholds. Conclusion FST rod and cone threshold elevation in Stargardt disease patients correlated well with measures of structure and function, as well as ophthalmoscopic retinal appearance. FST appears to be a useful tool for assessing rod and cone function in Stargardt disease. PMID:24695063

Field nanoemitter: One-dimension Al4C3 ceramics

NASA Astrophysics Data System (ADS)

Sun, Y.; Cui, H.; Gong, L.; Chen, Jian; Shen, P. K.; Wang, C. X.

2011-07-01

As a kind of ionic (or salt-like) carbide, Al4C3 hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al4C3 in fact might have huge potential for exhibiting active functionality on field-emission application. Herein, we report for the first time the catalyst-free synthesis and excellent field emission properties of Al4C3 one-dimension (1-D) nanostructures. The 1-D nanostructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 1.4-2.0 V μm-1 and the threshold field down to 4.2-4.4 V μm-1. Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al4C3 ceramic material in vacuum microelectronic devices.

Application of highly ordered carbon nanotubes templates to field-emission organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Chi-Shing; Su, Shui-Hsiang; Chi, Hsiang-Yu; Yokoyama, Meiso

2009-01-01

An anodic aluminum oxide (AAO) template was formed by a two-step anodization process. Carbon nanotubes (CNTs) were successfully synthesized along with AAO pores and the diameters of CNTs equaled those of AAO pores. The lengths of CNTs during a chemical vapor deposition synthesized process on the AAO template were effectively controlled. These AAO-CNTs exhibit excellent field emission with a low turn-on field (0.7 V/μm) and a low threshold field (1.4 V/μm). The field enhancement factor, calculated from the non-saturated region of the Fowler-Nordheim (F-N) plot, is about 8237. A novel field-emission organic light-emitting diode (FEOLED) combining AAO-CNTs cathodes as electron source with organic electroluminescent (EL) light-emitting layers coated on indium-tin-oxide (ITO) is produced. The uniform and dense luminescence image is obtained in the FEOLEDs. Organic EL light-emitting materials have lower working voltage than inorganic phosphor-coated fluorescent screens.

Characterization of laser induced damage of HR coatings with picosecond pulses

NASA Astrophysics Data System (ADS)

Li, Cheng; Zhao, Yuan'an; Cui, Yun; Wang, Yueliang; Peng, Xiaocong; Shan, Chong; Zhu, Meiping; Wang, Jianguo; Shao, Jianda

2017-11-01

The effect of protective layer on the picosecond laser-induced damage behaviors of HfO2/SiO2 high-reflective (HR) coatings are explored. Two kinds of 1064nm HR coatings with and without protective layer are deposited by electron beam evaporation. Laser-induced damage tests are conducted with 1064nm, 30ps S-polarized and P-polarized pulses with different angle of incidence (AOI) to make the electric fields intensity in the HR coatings discrepantly. Damage morphology and cross section of damage sites were characterized by scanning electron microscope (SEM) and focused ion beam (FIB), respectively. It is found that SiO2 protective layer have a certain degree of improvement on laser induced damage threshold (LIDT) for every AOIs. The onset damage initiated very near to the Max peak of e-field, after which forms ripple-like pits. The damage morphology presents as layer delamination at high fluence. The Laser damage resistance is correspond with the maximum E-intensity in the coating stacks.

Doped organic transistors operating in the inversion and depletion regime

PubMed Central

Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

2013-01-01

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs 1–xN x alloys: The appearance of a mobility edge

DOE PAGES

Alberi, K.; Fluegel, B.; Beaton, D. A.; ...

2012-07-09

Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋ xN x as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

Crossing Thresholds: Identifying Conceptual Transitions in Postsecondary Teaching

ERIC Educational Resources Information Center

Wilcox, Susan; Leger, Andy B.

2013-01-01

In this paper we report on research we conducted to begin the process of identifying threshold concepts in the field of postsecondary teaching. Meyer & Land (2006) propose that within all disciplinary fields there seem to be particular "threshold concepts" that serve as gateways, opening up new and previously inaccessible ways of…

Type testing of the Siemens Plessey electronic personal dosemeter.

PubMed

Hirning, C R; Yuen, P S

1995-07-01

This paper presents the results of a laboratory assessment of the performance of a new type of personal dosimeter, the Electronic Personal Dosemeter made by Siemens Plessey Controls Limited. Twenty pre-production dosimeters and a reader were purchased by Ontario Hydro for the assessment. Tests were performed on radiological performance, including reproducibility, accuracy, linearity, detection threshold, energy response, angular response, neutron response, and response time. There were also tests on the effects of a variety of environmental factors, such as temperature, humidity, pulsed magnetic and electric fields, low- and high-frequency electromagnetic fields, light exposure, drop impact, vibration, and splashing. Other characteristics that were tested were alarm volume, clip force, and battery life. The test results were compared with the relevant requirements of three standards: an Ontario Hydro standard for personal alarming dosimeters, an International Electrotechnical Commission draft standard for direct reading personal dose monitors, and an International Electrotechnical Commission standard for thermoluminescence dosimetry systems for personal monitoring. In general, the performance of the Electronic Personal Dosemeter was found to be quite acceptable: it met most of the relevant requirements of the three standards. However, the following deficiencies were found: slow response time; sensitivity to high-frequency electromagnetic fields; poor resistance to dropping; and an alarm that was not loud enough. In addition, the response of the electronic personal dosimeter to low-energy beta rays may be too low for some applications. Problems were experienced with the reliability of operation of the pre-production dosimeters used in these tests.

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model

PubMed Central

Abid, Abubakar; O’Brien, Jonathan M.; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R.; Langer, Robert; Traverso, Giovanni

2017-01-01

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of −41.2, −36.1, and −34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body. PMID:28447624

Different Ways to Apply a Measurement Instrument of E-Nose Type to Evaluate Ambient Air Quality with Respect to Odour Nuisance in a Vicinity of Municipal Processing Plants

PubMed Central

Szulczyński, Bartosz; Wasilewski, Tomasz; Wojnowski, Wojciech; Majchrzak, Tomasz; Dymerski, Tomasz; Namieśnik, Jacek; Gębicki, Jacek

2017-01-01

This review paper presents different ways to apply a measurement instrument of e-nose type to evaluate ambient air with respect to detection of the odorants characterized by unpleasant odour in a vicinity of municipal processing plants. An emphasis was put on the following applications of the electronic nose instruments: monitoring networks, remote controlled robots and drones as well as portable devices. Moreover, this paper presents commercially available sensors utilized in the electronic noses and characterized by the limit of quantification below 1 ppm v/v, which is close to the odour threshold of some odorants. Additionally, information about bioelectronic noses being a possible alternative to electronic noses and their principle of operation and application potential in the field of air evaluation with respect to detection of the odorants characterized by unpleasant odour was provided. PMID:29156597

Different Ways to Apply a Measurement Instrument of E-Nose Type to Evaluate Ambient Air Quality with Respect to Odour Nuisance in a Vicinity of Municipal Processing Plants.

PubMed

Szulczyński, Bartosz; Wasilewski, Tomasz; Wojnowski, Wojciech; Majchrzak, Tomasz; Dymerski, Tomasz; Namieśnik, Jacek; Gębicki, Jacek

2017-11-19

This review paper presents different ways to apply a measurement instrument of e-nose type to evaluate ambient air with respect to detection of the odorants characterized by unpleasant odour in a vicinity of municipal processing plants. An emphasis was put on the following applications of the electronic nose instruments: monitoring networks, remote controlled robots and drones as well as portable devices. Moreover, this paper presents commercially available sensors utilized in the electronic noses and characterized by the limit of quantification below 1 ppm v / v , which is close to the odour threshold of some odorants. Additionally, information about bioelectronic noses being a possible alternative to electronic noses and their principle of operation and application potential in the field of air evaluation with respect to detection of the odorants characterized by unpleasant odour was provided.

Scaling Laws for NanoFET Sensors

NASA Astrophysics Data System (ADS)

Wei, Qi-Huo; Zhou, Fu-Shan

2008-03-01

In this paper, we report our numerical studies of the scaling laws for nanoplate field-effect transistor (FET) sensors by simplifying the nanoplates as random resistor networks. Nanowire/tube FETs are included as the limiting cases where the device width goes small. Computer simulations show that the field effect strength exerted by the binding molecules has significant impact on the scaling behaviors. When the field effect strength is small, nanoFETs have little size and shape dependence. In contrast, when the field-effect strength becomes stronger, there exists a lower detection threshold for charge accumulation FETs and an upper detection threshold for charge depletion FET sensors. At these thresholds, the nanoFET devices undergo a transition between low and large sensitivities. These thresholds may set the detection limits of nanoFET sensors. We propose to eliminate these detection thresholds by employing devices with very short source-drain distance and large width.

Analysis of retinal function using chromatic pupillography in retinitis pigmentosa and the relationship to electrically evoked phosphene thresholds.

PubMed

Kelbsch, Carina; Maeda, Fumiatsu; Lisowska, Jolanta; Lisowski, Lukasz; Strasser, Torsten; Stingl, Krunoslav; Wilhelm, Barbara; Wilhelm, Helmut; Peters, Tobias

2017-06-01

To analyse pupil responses to specific chromatic stimuli in patients with advanced retinitis pigmentosa (RP) to ascertain whether chromatic pupillography can be used as an objective marker for residual retinal function. To examine correlations between parameters of the pupil response and the perception threshold of electrically evoked phosphenes. Chromatic pupillography was performed in 40 patients with advanced RP (visual acuity < 0.02 or visual field ≤5°, non-recordable ERGs) and 40 age-matched healthy subjects. Pupil responses to full-field red (605 nm) and blue (420 nm) stimuli of 28 lx corneal illumination were recorded and analysed for two stimulus durations (1 and 4 seconds). The perception threshold of phosphenes to transcorneal electrostimulation was ascertained and correlated to the pupil responses and visual acuity. Patients with RP showed significantly reduced pupil responses to red and blue stimuli compared with the controls. With red stimuli, pupillary escape could be observed; blue stimuli resulted in a well-preserved postillumination pupil response. Phosphene thresholds were significantly increased in patients with RP and correlated with the parameters of the pupil response if all subjects were considered. Within the RP group alone, this relationship was less pronounced and statistically not significant. Chromatic pupillography demonstrated a significant decrease in outer retinal photoreceptor responses but a persisting and disinhibited intrinsic photosensitive retinal ganglion cell function in advanced RP. These phenomena may be useful as an objective marker for the efficacy of any interventional treatment for hereditary retinal diseases as well as for the selection of suitable patients for an electronic retinal implant. © 2016 Acta Ophthalmologica Scandinavica Foundation. Published by John Wiley & Sons Ltd.

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Nonlinear transport behavior of low dimensional electron systems

NASA Astrophysics Data System (ADS)

Zhang, Jingqiao

The nonlinear behavior of low-dimensional electron systems attracts a great deal of attention for its fundamental interest as well as for potentially important applications in nanoelectronics. In response to microwave radiation and dc bias, strongly nonlinear electron transport that gives rise to unusual electron states has been reported in two-dimensional systems of electrons in high magnetic fields. There has also been great interest in the nonlinear response of quantum ballistic constrictions, where the effects of quantum interference, spatial dispersion and electron-electron interactions play crucial roles. In this thesis, experimental results of the research of low dimensional electron gas systems are presented. The first nonlinear phenomena were observed in samples of highly mobile two dimensional electrons in GaAs heavily doped quantum wells at different magnitudes of DC and AC (10 KHz to 20 GHz) excitations. We found that in the DC excitation regime the differential resistance oscillates with the DC current and external magnetic field, similar behavior was observed earlier in AlGaAs/GaAs heterostructures [C.L. Yang et al. ]. At external AC excitations the resistance is found to be also oscillating as a function of the magnetic field. However the form of the oscillations is considerably different from the DC case. We show that at frequencies below 100 KHz the difference is a result of a specific average of the DC differential resistance during the period of the external AC excitations. Secondly, in similar samples, strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperatures at which the Shubnikov de Haas oscillations are absent. The scale of the electric fields essential for the effect, is found to be proportional to temperature in the low temperature limit. We suggest that the strong reduction of the longitudinal resistance is a result of a nontrivial distribution function of the electrons induced by the DC electric field. We compare our results with a theory proposed recently. The comparison allows us to find the quantum scattering time of 2D electron gas at high temperatures, in a regime, where previous methods were not successful. In addition, we observed a zero differential resistance state (ZDRS) in response to a direct current above a threshold value I > Ith applied to a two-dimensional system of electrons at low temperatures in a strong magnetic field. Entry into the ZDRS, which is not observable above several Kelvins, is accompanied by a sharp dip in the differential resistance. Additional analysis reveals instability of the electrons for I > Ith and an inhomogeneous, non-stationary pattern of the electric current. We suggest that the dominant mechanism leading to the new electron state is the redistribution of electrons in energy space induced by the direct current. Finally, we present the results of rectification of microwave radiation generated by an asymmetric, ballistic dot at different frequencies (1-40GHz), temperatures (0.3K-6K) and magnetic fields. A strong reduction of the microwave rectification is found in magnetic fields at which the cyclotron radius of electron orbits at the Fermi level is smaller than the size of the dot. With respect to the magnetic field, both symmetric and anti-symmetric contributions to the directed transport are presented in this thesis. The symmetric part of the rectified voltage changes significantly with microwave frequency o at otauf ≥ 1, where tau f is the time of a ballistic electron flight across the dot. The results lead consistently toward the ballistic origin of the effect, and can be explained by the strong nonlocal electron response to the microwave electric field, which affects both the speed and the direction of the electron motion inside the dot.

The effects of temperature and magnetic flux on electron transport through a four-channel DNA model

NASA Astrophysics Data System (ADS)

Lee, Sunhee; Hedin, Eric; Joe, Yong

2010-03-01

The temperature dependence of the conductivity of lambda phage DNA has been measured by Tran et al [1] experimentally, where the conductivity displayed strong (weak) temperature dependence above (below) a threshold temperature. In order to understand the temperature effects of electron transport theoretically, we study a two-dimensional and four-channel DNA model using a tight-binding (TB) Hamiltonian. The thermal effects within a TB model are incorporated into the hopping integral and the relative twist angle from its equilibrium value between base-pairs. Since these thermal structural fluctuations localize the electronic wave functions in DNA, we examine a temperature-dependent localization length, a temperature-driven transmission, and current-voltage characteristics in this system. In addition, we incorporate magnetic field effects into the analysis of the transmission through DNA in order to modulate the quantum interference between the electron paths that comprise the 4-channel structure. [1] P. Tran, B. Alavi, and G. Gruner, PRL 85, 1564 (2000).

Reduction of LDI threshold by electron trapping

NASA Astrophysics Data System (ADS)

Rose, Harvey A.; Russell, David

2000-10-01

The effect of trapped electrons on the Langmuir wave decay instability (LDI), considered as a secondary instability to SRS, is twofold. First, for a given level of SRS, the Langmuir wave (LW) response, LW_0, may increase compared to that predicted by the linearized Vlasov equation because of electrons trapped by LW_0, and second, given LW_0, the threshold for LDI is lowered^* by electrons trapped in the LDI daughter wave, LW_1. When kλ D for LW0 is large, say greater than 0.30, then its harmonics, and those of LW_1, are very weakly excited and a complete catalog of nonlinear periodic solutions arising from the LDI is possible. Dependence of the nonlinear LDI threshold on kλ D for a CH plasma will be presented. *This possibility has also been discussed by D. Mourenas, Phys. Plasmas 6, 1258 (1999).

Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide

NASA Astrophysics Data System (ADS)

Kerbiriou, X.; Barthe, M.-F.; Esnouf, S.; Desgardin, P.; Blondiaux, G.; Petite, G.

2007-05-01

Both for electronic and nuclear applications, it is of major interest to understand the properties of point defects into silicon carbide (SiC). Low energy electron irradiations are supposed to create primary defects into materials. SiC single crystals have been irradiated with electrons at two beam energies in order to investigate the silicon displacement threshold energy into SiC. This paper presents the characterization of the electron irradiation-induced point defects into both polytypes hexagonal (6H) and cubic (3C) SiC single crystals by using both positron annihilation spectroscopy (PAS) and electron paramagnetic resonance (EPR). The nature and the concentration of the generated point defects depend on the energy of the electron beam and the polytype. After an electron irradiation at an energy of 800 keV vSi mono-vacancies and vSi-vC di-vacancies are detected in both 3C and 6H-SiC polytypes. On the contrary, the nature of point defects detected after an electron irradiation at 190 keV strongly depends on the polytype. Into 6H-SiC crystals, silicon Frenkel pairs vSi-Si are detected whereas only carbon vacancy related defects are detected into 3C-SiC crystals. The difference observed in the distribution of defects detected into the two polytypes can be explained by the different values of the silicon displacement threshold energies for 3C and 6H-SiC. By comparing the calculated theoretical numbers of displaced atoms with the defects numbers measured using EPR, the silicon displacement threshold energy has been estimated to be slightly lower than 20 eV in the 6H polytype and close to 25 eV in the 3C polytype.

Electron Holes in phase-space: what they are and why they matter

NASA Astrophysics Data System (ADS)

Hutchinson, I. H.

2016-10-01

Plasma electron holes are soliton-like electric potential structures sustained self-consistently by a deficit of phase-space density on trapped orbits. They are a class of Bernstein Green and Kruskal (BGK)-mode phase-space vortices, long studied in basic analytic and computational theory and observed in some experiments. Recently it has become clear from space-craft observations that isolated potential structures with the character of electron holes constitute an important component of space-plasma turbulence. Modern computational simulations of collisionless plasmas also often observe electron holes to form as a nonlinear consequence of kinetic electron instabilities. This tutorial will explain the basic theory of electron hole structure, trace the development of the understanding of electron holes, and survey some of the observational evidence for their significance. It was found early on that unmagnetized multidimensional simulations of electron two-stream instabilities do not show the long lived holes that appear in one dimension. Deliberately-created 1-D slab holes in multiple dimensions experience a transverse instability unless the guiding magnetic field is strong enough. Analysis has yet to identify unequivocally the instability mechanism and threshold; but it can show that spherically symmetric holes in 3-D without magnetic field are essentially impossible. Recent simulations have studied holes' formation, self-acceleration, merging, splitting, and growth. Analytic understanding of many of these phenomena is gained from the kinematics of the hole regarded as a coherent entity, accounting for the plasma momentum changes it induces, and especially the interaction with the ions. Electron holes can travel at up to approximately the electron thermal speed, but not slower (relative to ions) than several times the ion acoustic speed. Some notable current research questions will be described.

Ellipticity of near-threshold harmonics from stretched molecules.

PubMed

Li, Weiyan; Dong, Fulong; Yu, Shujuan; Wang, Shang; Yang, Shiping; Chen, Yanjun

2015-11-30

We study the ellipticity of near-threshold harmonics (NTH) from aligned molecules with large internuclear distances numerically and analytically. The calculated harmonic spectra show a broad plateau for NTH which is several orders of magnitude higher than that for high-order harmonics. In particular, the NTH plateau shows high ellipticity at small and intermediate orientation angles. Our analyses reveal that the main contributions to the NTH plateau come from the transition of the electron from continuum states to these two lowest bound states of the system, which are strongly coupled together by the laser field. Besides continuum states, higher excited states also play a role in the NTH plateau, resulting in a large phase difference between parallel and perpendicular harmonics and accordingly high ellipticity of the NTH plateau. The NTH plateau with high intensity and large ellipticity provides a promising manner for generating strong elliptically-polarized extreme-ultraviolet (EUV) pulses.

Nonlinear Generation of Electromagnetic Waves through Induced Scattering by Thermal Plasma.

PubMed

Tejero, E M; Crabtree, C; Blackwell, D D; Amatucci, W E; Mithaiwala, M; Ganguli, G; Rudakov, L

2015-12-09

We demonstrate the conversion of electrostatic pump waves into electromagnetic waves through nonlinear induced scattering by thermal particles in a laboratory plasma. Electrostatic waves in the whistler branch are launched that propagate near the resonance cone. When the amplitude exceeds a threshold ~5 × 10(-6) times the background magnetic field, wave power is scattered below the pump frequency with wave normal angles (~59°), where the scattered wavelength reaches the limits of the plasma column. The scattered wave has a perpendicular wavelength that is an order of magnitude larger than the pump wave and longer than the electron skin depth. The amplitude threshold, scattered frequency spectrum, and scattered wave normal angles are in good agreement with theory. The results may affect the analysis and interpretation of space observations and lead to a comprehensive understanding of the nature of the Earth's plasma environment.

Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.

PubMed

Choi, Pyungho; Lee, Junki; Park, Hyoungsun; Baek, Dohyun; Lee, Jaehyeong; Yi, Junsin; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O2/(Ar + O2)) and subsequent annealing process. The electrical properties exhibited by this device include field-effect mobility (μ(eff)), sub-threshold swing (SS), and on/off current ratio (I(ON/OFF)) values of 28.97 cm2/V x s, 0.2 V/decade, and 2.64 x 10(7), respectively. The average transmittance values for each OPP condition in the visible range were greater than 80%. The positive gate bias stress resulted in a positive threshold voltage (V(th)) shift in the transfer curves and degraded the parameters μ(eff) and SS. These phenomena originated from electron trapping from the ITZO channel layer into the oxide/ITZO interface trap sites.

Isomorphic Properties of Atoms, Molecules, Water, DNA, Crystals, Earth, SolarSystem and Galaxies

NASA Astrophysics Data System (ADS)

Gareev, F. A.; Gareeva, G. F.; Zhidkova, I. E.

2009-03-01

We discuss the cooperative resonance synchronization enhancement mechanisms of Low Energy Nuclear Reactions (LENR). Some of the low energy external fields can be used as triggers for starting and enhancing exothermic LENR. Any external field shortening distances between protons in nuclei and electrons in atoms should enhance beta-decay (capture) or double-beta decay (capture). We have proposed a new mechanism of LENR: cooperative resonance synchronization processes in the whole system nuclei+atoms+condensed matter+gaseuos+plasma medium, which we suggest can occur at a smaller threshold than the corresponding ones on free constituents. The cooperative processes can be induced and enhanced by low energy external fields. The excess heat is the emission of internal energy, and transmutations at LENR are the result of redistribution inner energy of the whole system.

Effects of dimensionality on kinetic simulations of laser-ion acceleration in the transparency regime

NASA Astrophysics Data System (ADS)

Stark, D. J.; Yin, L.; Albright, B. J.; Guo, F.

2017-05-01

A particle-in-cell study of laser-ion acceleration mechanisms in the transparency regime illustrates how two-dimensional (2D) S and P simulations (laser polarization in and out of the simulation plane, respectively) capture different physics characterizing these systems, visible in their entirety often in cost-prohibitive three-dimensional (3D) simulations. The electron momentum anisotropy induced in the target by a laser pulse is dramatically different in the two 2D cases, manifested in differences in target expansion timescales, electric field strengths, and density thresholds for the onset of relativistically induced transparency. In particular, 2D-P simulations exhibit dramatically greater electron heating in the simulation plane, whereas 2D-S ones show a much more isotropic energy distribution, similar to 3D. An ion trajectory analysis allows one to isolate the fields responsible for ion acceleration and to characterize the acceleration regimes in time and space. The artificial longitudinal electron heating in 2D-P exaggerates the effectiveness of target-normal sheath acceleration into its dominant acceleration mechanism throughout the laser-plasma interaction, whereas 2D-S and 3D both have sizable populations accelerated preferentially during transparency.

Effects of dimensionality on kinetic simulations of laser-ion acceleration in the transparency regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stark, David James; Yin, Lin; Albright, Brian James

2017-05-03

A particle-in-cell study of laser-ion acceleration mechanisms in the transparency regime illustrates how two-dimensional (2D) S and P simulations (laser polarization in and out of the simulation plane, respectively) capture different physics characterizing these systems, visible in their entirety in often cost-prohibitive three-dimensional (3D) simulations. The electron momentum anisotropy induced in the target by the laser pulse is dramatically different in the two 2D cases, manifested in differences in target expansion timescales, electric field strengths, and density thresholds for the onset of relativistically induced transparency. In particular, 2D-P simulations exhibit dramatically greater electron heating in the simulation plane, whereas 2D-Smore » ones show a much more isotropic energy distribution, similar to 3D. An ion trajectory analysis allows one to isolate the fields responsible for ion acceleration and to characterize the acceleration regimes in time and space. The artificial longitudinal electron heating in 2D-P exaggerates the effectiveness of target-normal sheath acceleration into its dominant acceleration mechanism throughout the laser-plasma interaction, whereas 2D-S and 3D both have sizable populations accelerated preferentially during transparency.« less

Absolute cascade-free cross-sections for the 2S to 2P transition in Zn(+) using electron-energy-loss and merged-beams methods

NASA Technical Reports Server (NTRS)

Smith, Steven J.; Man, K.-F.; Chutjian, A.; Mawhorter, R. J.; Williams, I. D.

1991-01-01

Absolute cascade-free excitation cross-sections in an ion have been measured for the resonance 2S to 2P transition in Zn(+) using electron-energy-loss and merged electron-ion beams methods. Measurements were carried out at electron energies of below threshold to 6 times threshold. Comparisons are made with 2-, 5-, and 15-state close-coupling and distorted-wave theories. There is good agreement between experiment and the 15-state close-coupling cross-sections over the energy range of the calculations.

Oligo p-Phenylenevinylene Derivatives as Electron Transfer Matrices for UV-MALDI

NASA Astrophysics Data System (ADS)

Castellanos-García, Laura J.; Agudelo, Brian Castro; Rosales, Hernando F.; Cely, Melissa; Ochoa-Puentes, Christian; Blanco-Tirado, Cristian; Sierra, Cesar A.; Combariza, Marianny Y.

2017-12-01

Phenylenevinylene oligomers (PVs) have outstanding photophysical characteristics for applications in the growing field of organic electronics. Yet, PVs are also versatile molecules, the optical and physicochemical properties of which can be tuned by manipulation of their structure. We report the synthesis, photophysical, and MS characterization of eight PV derivatives with potential value as electron transfer (ET) matrices for UV-MALDI. UV-vis analysis show the presence of strong characteristic absorption bands in the UV region and molar absorptivities at 355 nm similar or higher than those of traditional proton (CHCA) and ET (DCTB) MALDI matrices. Most of the PVs exhibit non-radiative quantum yields (φ) above 0.5, indicating favorable thermal decay. Ionization potential values (IP) for PVs, calculated by the Electron Propagator Theory (EPT), range from 6.88 to 7.96 eV, making these oligomers good candidates as matrices for ET ionization. LDI analysis of PVs shows only the presence of radical cations (M+.) in positive ion mode and absence of clusters, adducts, or protonated species; in addition, M+. threshold energies for PVs are lower than for DCTB. We also tested the performance of four selected PVs as ET MALDI matrices for analytes ranging from porphyrins and phthalocyanines to polyaromatic compounds. Two of the four PVs show S/N enhancement of 1961% to 304% in comparison to LDI, and laser energy thresholds from 0.17 μJ to 0.47 μJ compared to 0.58 μJ for DCTB. The use of PV matrices also results in lower LODs (low fmol range) whereas LDI LODs range from pmol to nmol. [Figure not available: see fulltext.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less

Ar 3p photoelectron sideband spectra in two-color XUV + NIR laser fields

NASA Astrophysics Data System (ADS)

Minemoto, Shinichirou; Shimada, Hiroyuki; Komatsu, Kazma; Komatsubara, Wataru; Majima, Takuya; Mizuno, Tomoya; Owada, Shigeki; Sakai, Hirofumi; Togashi, Tadashi; Yoshida, Shintaro; Yabashi, Makina; Yagishita, Akira

2018-04-01

We performed photoelectron spectroscopy using femtosecond XUV pulses from a free-electron laser and femtosecond near-infrared pulses from a synchronized laser, and succeeded in measuring Ar 3p photoelectron sideband spectra due to the two-color above-threshold ionization. In our calculations of the first-order time-dependent perturbation theoretical model based on the strong field approximation, the photoelectron sideband spectra and their angular distributions are well reproduced by considering the timing jitter between the XUV and the NIR pulses, showing that the timing jitter in our experiments was distributed over the width of {1.0}+0.4-0.2 ps. The present approach can be used as a method to evaluate the timing jitter inevitable in FEL experiments.

Comparison of a low- to high-confinement transition theory with experimental data from DIII-D.

PubMed

Guzdar, P N; Kleva, R G; Groebner, R J; Gohil, P

2002-12-23

From our recent theory based on the generation of shear flow and field in finite beta plasmas, the criterion for bifurcation from low to high confinement mode yields a critical parameter proportional to T(e)/square root (L(n)), where T(e) is the electron temperature and L(n) is the density scale length. The predicted threshold shows very good agreement with edge measurements on discharges undergoing low-to-high transitions in DIII-D. The observed differences in the transitions with the reversal of the toroidal magnetic field are reconciled in terms of this critical parameter. The theory also provides an explanation for pellet injection H modes in DIII-D, thereby unifying unconnected methods for accomplishing the transition.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio andmore » good memory retention.« less

77 FR 9288 - Self-Regulatory Organizations; NYSE Arca, Inc.; Notice of Filing and Immediate Effectiveness of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-16

... electronic executions and to delete references to Royalty Fees for foreign currency options, which the... posted electronic executions and to delete references to Royalty Fees for foreign currency options, which....... -0.36 Threshold 3 More than 1,200,000.. -0.42 Threshold 4 More than 3,500,000.. -0.43 Royalty Fees...

Multisampling suprathreshold perimetry: a comparison with conventional suprathreshold and full-threshold strategies by computer simulation.

PubMed

Artes, Paul H; Henson, David B; Harper, Robert; McLeod, David

2003-06-01

To compare a multisampling suprathreshold strategy with conventional suprathreshold and full-threshold strategies in detecting localized visual field defects and in quantifying the area of loss. Probability theory was applied to examine various suprathreshold pass criteria (i.e., the number of stimuli that have to be seen for a test location to be classified as normal). A suprathreshold strategy that requires three seen or three missed stimuli per test location (multisampling suprathreshold) was selected for further investigation. Simulation was used to determine how the multisampling suprathreshold, conventional suprathreshold, and full-threshold strategies detect localized field loss. To determine the systematic error and variability in estimates of loss area, artificial fields were generated with clustered defects (0-25 field locations with 8- and 16-dB loss) and, for each condition, the number of test locations classified as defective (suprathreshold strategies) and with pattern deviation probability less than 5% (full-threshold strategy), was derived from 1000 simulated test results. The full-threshold and multisampling suprathreshold strategies had similar sensitivity to field loss. Both detected defects earlier than the conventional suprathreshold strategy. The pattern deviation probability analyses of full-threshold results underestimated the area of field loss. The conventional suprathreshold perimetry also underestimated the defect area. With multisampling suprathreshold perimetry, the estimates of defect area were less variable and exhibited lower systematic error. Multisampling suprathreshold paradigms may be a powerful alternative to other strategies of visual field testing. Clinical trials are needed to verify these findings.

Theory of Raman scattering in coupled electron-phonon systems

NASA Astrophysics Data System (ADS)

Itai, K.

1992-01-01

The Raman spectrum is calculated for a coupled conduction-electron-phonon system in the zero-momentum-transfer limit. The Raman scattering is due to electron-hole excitations and phonons as well. The phonons of those branches that contribute to the electron self-energy and the correction of the electron-phonon vertex are assumed to have flat energy dispersion (the Einstein phonons). The effect of electron-impurity scattering is also incorporated. Both the electron-phonon interaction and the electron-impurity interaction cause the fluctuation of the electron distribution between different parts of the Fermi surface, which results in overdamped zero-sound modes of various symmetries. The scattering cross section is obtained by solving the Bethe-Salpeter equation. The spectrum shows a lower threshold at the smallest Einstein phonon energy when only the electron-phonon interaction is taken into consideration. When impurities are also taken into consideration, the threshold disappears.

Earth's magnetic field as a radiator to detet cosmic ray electrons of energy >10/sup 12/ eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stephens, S.A.; Balasubrahmanyan, V.K.

1983-10-01

We have examined in detail the synchrotron emission by electrons of energy greater than a few TeV in the earth's magnetic field. The photon spectrum lies in the X-ray and ..gamma.. ray region. As the emission takes place in a narrow cone along the direction of the electron, the photons would be incident nearly along a straight line on a detector. This unique feature provides the signature to identify the electron unambiguously. The mean energy of the photons being proportional to the square of the electron energy allows us to determine the energy accurately. Though it may appear that onemore » needs to know the arrival direction of electrons to obtain its energy, we have shown that an omnidirectional detector can be satisfactorily used to estimate the energy. We also show that the colleting power of the detector is a sensitive function of the area of the detector A, the energy of electron E/sub 0/, and the number of photons required to identify an electron n/sub ..gamma../; asymptotically the collecting power is proportional to A/sup 1.43/ E/sub 0/n/sub ..gamma..//sup -1.8/. An instrument, with an energy threshold for the detection of photons can be used to measure reliably the integral flux of electrons, even if it has limited energy resolution. We have calculated the event rate expected by using an ideal balloon-borne detector capable of detecting above 20 keV at 4 g cm/sup -2/ of atmospheric depth over Palestine Texas, and compared with the expected rates using instruments based on currently available techniques of detection.« less

A percolation approach to study the high electric field effect on electrical conductivity of insulating polymer

NASA Astrophysics Data System (ADS)

Benallou, Amina; Hadri, Baghdad; Martinez-Vega, Juan; El Islam Boukortt, Nour

2018-04-01

The effect of percolation threshold on the behaviour of electrical conductivity at high electric field of insulating polymers has been briefly investigated in literature. Sometimes the dead ends links are not taken into account in the study of the electric field effect on the electrical properties. In this work, we present a theoretical framework and Monte Carlo simulation of the behaviour of the electric conductivity at high electric field based on the percolation theory using the traps energies levels which are distributed according to distribution law (uniform, Gaussian, and power-law). When a solid insulating material is subjected to a high electric field, and during trapping mechanism the dead ends of traps affect with decreasing the electric conductivity according to the traps energies levels, the correlation length of the clusters, the length of the dead ends, and the concentration of the accessible positions for the electrons. A reasonably good agreement is obtained between simulation results and the theoretical framework.

Enhanced field electron emission from aligned diamond-like carbon nanorod arrays prepared by reactive ion beam etching

NASA Astrophysics Data System (ADS)

Zhao, Yong; Qin, Shi-Qiao; Zhang, Xue-Ao; Chang, Sheng-Li; Li, Hui-Hui; Yuan, Ji-Ren

2016-05-01

Homogeneous diamond-like carbon (DLC) films were deposited on Si supports by a pulsed filtered cathodic vacuum arc deposition system. Using DLC films masked by Ni nanoparticles as precursors, highly aligned diamond-like carbon nanorod (DLCNR) arrays were fabricated by the etching of inductively coupled radio frequency oxygen plasma. The as-prepared DLCNR arrays exhibit excellent field emission properties with a low turn-on field of 2.005 V μm-1 and a threshold field of 4.312 V μm-1, respectively. Raman spectroscopy and x-ray photoelectron spectroscopy were employed to determine the chemical bonding structural change of DLC films before and after etching. It is confirmed that DLC films have good connection with Si supports via the formation of the SiC phase, and larger conductive sp2 domains are formed in the as-etched DLC films, which play essential roles in the enhanced field emission properties for DLCNR arrays.

Parametric study of waste chicken fat catalytic chemical vapour deposition for controlled synthesis of vertically aligned carbon nanotubes

NASA Astrophysics Data System (ADS)

Suriani, A. B.; Dalila, A. R.; Mohamed, A.; Rosmi, M. S.; Mamat, M. H.; Malek, M. F.; Ahmad, M. K.; Hashim, N.; Isa, I. M.; Soga, T.; Tanemura, M.

2016-12-01

High-quality vertically aligned carbon nanotubes (VACNTs) were synthesised using ferrocene-chicken oil mixture utilising a thermal chemical vapour deposition (TCVD) method. Reaction parameters including vaporisation temperature, catalyst concentration and synthesis time were examined for the first time to investigate their influence on the growth of VACNTs. Analysis via field emission scanning electron microscopy and micro-Raman spectroscopy revealed that the growth rate, diameter and crystallinity of VACNTs depend on the varied synthesis parameters. Vaporisation temperature of 570°C, catalyst concentration of 5.33 wt% and synthesis time of 60 min were considered as optimum parameters for the production of VACNTs from waste chicken fat. These parameters are able to produce VACNTs with small diameters in the range of 15-30 nm and good quality (ID/IG 0.39 and purity 76%) which were comparable to those synthesised using conventional carbon precursor. The low turn on and threshold fields of VACNTs synthesised using optimum parameters indicated that the VACNTs synthesised using waste chicken fat are good candidate for field electron emitter. The result of this study therefore can be used to optimise the growth and production of VACNTs from waste chicken fat in a large scale for field emission application.

A thermal oscillating two-stream instability

NASA Technical Reports Server (NTRS)

Dysthe, K. B.; Mjolhus, E.; Rypdal, K.; Pecseli, H. L.

1983-01-01

A theory for the oscillating two-stream instability, in which the Ohmic heating of the electrons constitutes the nonlinearity, is developed for an inhomogeneous and magnetized plasma. Its possible role in explaining short-scale, field-aligned irregularities observed in ionospheric heating experiments is emphasized. The theory predicts that the initial growth of such irregularities is centered around the level of upper hybrid resonance. Furthermore, plane disturbances nearly parallel to the magnetic meridian plane have the largest growth rates. Expressions for threshold, growth rate, and transverse scale of maximum growth are obtained. Special attention is paid to the transport theory, since the physical picture depends heavily on the kind of electron collisions which dominate. This is due to the velocity dependence of collision frequencies, which gives rise to the thermal forces

40 CFR 98.91 - Reporting threshold.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 22 2013-07-01 2013-07-01 false Reporting threshold. 98.91 Section 98.91 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) MANDATORY GREENHOUSE GAS REPORTING Electronics Manufacturing § 98.91 Reporting threshold. (a) You must report GHG emissions under this subpart if...

40 CFR 98.91 - Reporting threshold.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 21 2011-07-01 2011-07-01 false Reporting threshold. 98.91 Section 98.91 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) MANDATORY GREENHOUSE GAS REPORTING Electronics Manufacturing § 98.91 Reporting threshold. (a) You must report GHG emissions under this subpart if...

40 CFR 98.91 - Reporting threshold.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 21 2014-07-01 2014-07-01 false Reporting threshold. 98.91 Section 98.91 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) MANDATORY GREENHOUSE GAS REPORTING Electronics Manufacturing § 98.91 Reporting threshold. (a) You must report GHG emissions under this subpart if...

Faraday effect on stimulated Raman scattering in the linear region

NASA Astrophysics Data System (ADS)

Liu, Z. J.; Li, B.; Xiang, J.; Cao, L. H.; Zheng, C. Y.; Hao, L.

2018-04-01

The paper presents the effect of Faraday rotation on stimulated Raman scattering (SRS). When light propagates along the magnetic field upon plasma, Faraday rotation occurs. The rotation angle can be expressed as {{d}}θ /{{d}}{s}=2.93× {10}-4B\\tfrac{{n}e/{n}c}{\\sqrt{1-{n}e/{n}c}} {cm}}-1 approximately, where θ is the rotation angle and s is distance, n e is the electron density, n c is the critical density and B is magnetic field in unit of Gauss. Both the incident light and Raman light have Faraday effects. The angle between the polarization directions of incident light and Raman light changes with position. The driven force of electron plasma wave also reduces, and then SRS scattering level is reduced. Faraday rotation effect can increase the laser intensity threshold of Raman scattering, even if the magnetic field strength is small. The circularly polarized light incident case is also compared with that of the linearly polarized light incident. The Raman scattering level of linearly polarized light is much smaller than that of circularly polarized light in the magnetized plasma. The difference between linearly and circularly polarized lights is also discussed.

New developments in supra-threshold perimetry.

PubMed

Henson, David B; Artes, Paul H

2002-09-01

To describe a series of recent enhancements to supra-threshold perimetry. Computer simulations were used to develop an improved algorithm (HEART) for the setting of the supra-threshold test intensity at the beginning of a field test, and to evaluate the relationship between various pass/fail criteria and the test's performance (sensitivity and specificity) and how they compare with modern threshold perimetry. Data were collected in optometric practices to evaluate HEART and to assess how the patient's response times can be analysed to detect false positive response errors in visual field test results. The HEART algorithm shows improved performance (reduced between-eye differences) over current algorithms. A pass/fail criterion of '3 stimuli seen of 3-5 presentations' at each test location reduces test/retest variability and combines high sensitivity and specificity. A large percentage of false positive responses can be detected by comparing their latencies to the average response time of a patient. Optimised supra-threshold visual field tests can perform as well as modern threshold techniques. Such tests may be easier to perform for novice patients, compared with the more demanding threshold tests.

Pulsating Magnetic Reconnection Driven by Three-Dimensional Flux-Rope Interactions.

PubMed

Gekelman, W; De Haas, T; Daughton, W; Van Compernolle, B; Intrator, T; Vincena, S

2016-06-10

The dynamics of magnetic reconnection is investigated in a laboratory experiment consisting of two magnetic flux ropes, with currents slightly above the threshold for the kink instability. The evolution features periodic bursts of magnetic reconnection. To diagnose this complex evolution, volumetric three-dimensional data were acquired for both the magnetic and electric fields, allowing key field-line mapping quantities to be directly evaluated for the first time with experimental data. The ropes interact by rotating about each other and periodically bouncing at the kink frequency. During each reconnection event, the formation of a quasiseparatrix layer (QSL) is observed in the magnetic field between the flux ropes. Furthermore, a clear correlation is demonstrated between the quasiseparatrix layer and enhanced values of the quasipotential computed by integrating the parallel electric field along magnetic field lines. These results provide clear evidence that field lines passing through the quasiseparatrix layer are undergoing reconnection and give a direct measure of the nonlinear reconnection rate. The measurements suggest that the parallel electric field within the QSL is supported predominantly by electron pressure; however, resistivity may play a role.

Single-Photon, Double Photodetachment of Nickel Phthalocyanine Tetrasulfonic Acid 4- Anions.

PubMed

Daly, Steven; Girod, Marion; Vojkovic, Marin; Giuliani, Alexandre; Antoine, Rodolphe; Nahon, Laurent; O'Hair, Richard A J; Dugourd, Philippe

2016-07-07

Single-photon, two-electron photodetachment from nickel phthalocyanine tetrasulfonic acid tetra anions, [NiPc](4-), was examined in the gas-phase using a linear ion trap coupled to the DESIRS VUV beamline of the SOLEIL Synchrotron. This system was chosen since it has a low detachment energy, known charge localization, and well-defined geometrical and electronic structures. A threshold for two-electron loss is observed at 10.2 eV, around 1 eV lower than previously observed double detachment thresholds on multiple charged protein anions. The photodetachment energy of [NiPc](4-) has been previously determined to be 3.5 eV and the photodetachment energy of [NiPc](3-•) is determined in this work to be 4.3 eV. The observed single photon double electron detachment threshold is hence 5.9 eV higher than the energy required for sequential single electron loss. Possible mechanisms are for double photodetachment are discussed. These observations pave the way toward new, exciting experiments for probing double photodetachment at relatively low energies, including correlation measurements on emitted photoelectrons.

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosenberg, M. J.; Solodov, A. A.; Myatt, J. F.

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the rst time to regimes of electron density scale length (~500 to 700 μm), electron temperature (~3 to 5 keV), and laser intensity (6 to 16 x 10 14 W/cm 2) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRSmore » sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ~0.7% to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ~4 x 10 14 to ~6 x 10 14 W/cm 2. These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.« less

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments

DOE PAGES

Rosenberg, M. J.; Solodov, A. A.; Myatt, J. F.; ...

2018-01-29

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the rst time to regimes of electron density scale length (~500 to 700 μm), electron temperature (~3 to 5 keV), and laser intensity (6 to 16 x 10 14 W/cm 2) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRSmore » sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ~0.7% to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ~4 x 10 14 to ~6 x 10 14 W/cm 2. These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.« less

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments

NASA Astrophysics Data System (ADS)

Rosenberg, M. J.; Solodov, A. A.; Myatt, J. F.; Seka, W.; Michel, P.; Hohenberger, M.; Short, R. W.; Epstein, R.; Regan, S. P.; Campbell, E. M.; Chapman, T.; Goyon, C.; Ralph, J. E.; Barrios, M. A.; Moody, J. D.; Bates, J. W.

2018-01-01

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the first time to regimes of electron density scale length (˜500 to 700 μ m ), electron temperature (˜3 to 5 keV), and laser intensity (6 to 16 ×1014 W /cm2 ) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRS sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ˜0.7 % to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ˜4×10 14 to ˜6 ×1014 W /cm2 . These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.

Generation of cyclotron harmonic waves in the ionospheric modification experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janabi, A.H.A.; Kumar, A.; Sharma, R.P.

1994-02-01

In the present paper, the parametric decay instability of the pump X-mode into electron Bernstein wave (EBW) near second harmonics of electron cyclotron frequency and IBW at different harmonics ([omega] < n[omega][sub ci];n = 2, 3, 4) is examined. Expressions are derived for homogeneous threshold, growth rate and convective threshold for this instability. Applications and relevances of the present investigation to ionospheric modification experiment in the F-layer of the ionosphere as well as during intense electron cyclotron resonance heating in the upcoming MTX tokamak have been given.

Synergy of inelastic and elastic energy loss. Temperature effects and electronic stopping power dependence

DOE PAGES

Zarkadoula, Eva; Xue, Haizhou; Zhang, Yanwen; ...

2015-06-16

A combination of an inelastic thermal spike model suitable for insulators and molecular dynamics simulations is used to study the effects of temperature and electronic energy loss on ion track formation, size and morphology in SrTiO 3 systems with pre-existing disorder. We find temperature dependence of the ion track size. In addition, we find a threshold in the electronic energy loss for a given pre-existing defect concentration, which indicates a threshold in the synergy between the inelastic and elastic energy loss.

Low to high confinement transition theory of finite-beta drift-wave driven shear flow and its comparison with data from DIII-D

NASA Astrophysics Data System (ADS)

Guzdar, P. N.; Kleva, R. G.; Groebner, R. J.; Gohil, P.

2004-03-01

Shear flow stabilization of edge turbulence in tokamaks has been the accepted paradigm for the improvement in confinement observed in high (H) confinement mode plasmas. Results on the generation of zonal flow and fields in finite β plasmas are presented. This theory yields a criterion for bifurcation from low to high (L-H) confinement mode, proportional to Te/√Ln , where Te is the electron temperature and Ln is the density scale-length at the steepest part of the density gradient. When this parameter exceeds a critical value (mostly determined by the strength of the toroidal magnetic field), the transition occurs. The predicted threshold based on this parameter shows good agreement with edge measurements on discharges undergoing L-H transitions in DIII-D [J. L. Luxon, R. Anderson, F. Batty et al., in Proceedings of the 11th Conference on Plasma Physics and Controlled Fusion Research, 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. I, p. 159]. The observed differences in the transitions with the reversal of the toroidal magnetic field are reconciled in terms of this critical parameter due to the differences in the density gradient scale-lengths in the edge. The theory also provides a possible explanation for lowered threshold power, pellet injection H modes in DIII-D, thereby providing a unified picture of the varied observations on the L-H transition.

Effects of substrate on the femtosecond laser-induced damage properties of gold films

NASA Astrophysics Data System (ADS)

Huang, Haopeng; Wang, Leilei; Kong, Fanyu; Xia, Zhilin; Jin, Yunxia; Xu, Jiao; Chen, Junming; Cui, Yun; Shao, Jianda

2018-07-01

In this work, gold films on two different types of substrates were fabricated by electron beam (e-beam) evaporation, and the femtosecond laser-induced damage properties were evaluated. The first sample was gold film deposited on fused silica, whereas the second was gold deposited on photoresist. 1-on-1 damage tests were implemented by an 800 ± 30 nm laser with pulse duration of 30 fs. Different damage thresholds and morphologies were obtained for the two samples. The damage threshold of the gold film on fused silica was 0.64 J/cm2, with the typical damage morphology of thermal ablation and melting; the damage threshold of the gold film on photoresist was 0.30 J/cm2, with the typical damage morphology of blisters or peeling off. In order to better understand the impact of the substrate on the properties of the whole sample, the normalized electric field intensity, temperature, and thermal stress distributions were calculated. The adhesion between the gold film and substrate were measured and the experimental results well agreed with the theoretical analysis. The results indicate that gold films deposited onto grating-structured fused silica will have more powerful laser damage resistance performance.

Mapping and load response of overload strain fields: Synchrotron X-ray measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, V; Jisrawi, N M; Sadangi, R K

High energy synchrotron X-ray diffraction measurements have been performed to provide quantitative microscopic guidance for modeling of fatigue crack growth. Specifically we report local strain mapping, along with in situ loading strain response, results on 4140 steel fatigue specimens exhibiting the crack growth retardation 'overload effect'. Detailed, 2D, {epsilon}{gamma}{gamma}-strain field mapping shows that a single overload (OL) cycle creates a compressive strain field extending millimeters above and below the crack plane. The OL strain field structures are shown to persist after the crack tip has grown well beyond the OL position. The specimen exhibiting the maximal crack growth rate retardationmore » following overload exhibits a tensile residual strain region at the crack tip. Strain field results, on in situ tensile loaded specimens, show a striking critical threshold load, F{sub c}, phenomenon in their strain response. At loads below F{sub c} the strain response is dominated by a rapid suppression of the compressive OL feature with modest response at the crack tip. At loads above F{sub c} the strain response at the OL position terminates and the response at the crack tip becomes large. This threshold load response behavior is shown to exhibit lower F{sub c} values, and dramatically enhanced rates of strain change with load as the crack tip propagates farther beyond the OL position. The OL strain feature behind the crack tip also is shown to be suppressed by removing the opposing crack faces via an electron discharge cut passing through the crack tip. Finally unique 2D strain field mapping (imaging) results, through the depth of the specimen, of the fatigue crack front and the OL feature in the wake are also presented.« less

Single speckle SRS threshold as determined by electron trapping, collisions and speckle duration

NASA Astrophysics Data System (ADS)

Rose, Harvey; Daughton, William; Yin, Lin; Langdon, Bruce

2008-11-01

Speckle SRS intensity threshold has been shown to increase with spatial dimension, D, because both diffraction and trapped electron escape rate increase with D, though the net effect is to substantially decrease the threshold compared to 1D linear gain calculations. On the other hand, the apparent threshold appears to decrease with integration time in PIC simulations. We present an optimum nonlinearly resonant calculation of the SRS threshold, taking into account large fluctuations of the SRS seed reflectivity, R0. Such fluctuations, absent in 1D, are caused by a gap in the linear reflectivity gain spectrum which leads to an exponential probability distribution for R0. While the SRS threshold intensity is of course finite, these fluctuations lead to a decrease of apparent threshold with increasing speckle lifetime. L. Yin et al., Physics of Plasmas 15, 013109 (2008). D. S. Montgomery et al., 9, 2311(2002). Bruce Langdon et al., 38^th Anomalous Absorption Conference (2008). Harvey A. Rose, Physics of Plasmas 10, 1468 (2003). Harvey A. Rose and L. Yin, Physics of Plasmas 15, 042311 (2008)., Harvey A. Rose and David A. Russell, Phys. Plasma 8, 4784 (2001).

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

PubMed

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

Beyond injection: Trojan horse underdense photocathode plasma wakefield acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hidding, B.; Rosenzweig, J. B.; Xi, Y.

2012-12-21

An overview on the underlying principles of the hybrid plasma wakefield acceleration scheme dubbed 'Trojan Horse' acceleration is given. The concept is based on laser-controlled release of electrons directly into a particle-beam-driven plasma blowout, paving the way for controlled, shapeable electron bunches with ultralow emittance and ultrahigh brightness. Combining the virtues of a low-ionization-threshold underdense photocathode with the GV/m-scale electric fields of a practically dephasing-free beam-driven plasma blowout, this constitutes a 4th generation electron acceleration scheme. It is applicable as a beam brightness transformer for electron bunches from LWFA and PWFA systems alike. At FACET, the proof-of-concept experiment 'E-210: Trojanmore » Horse Plasma Wakefield Acceleration' has recently been approved and is in preparation. At the same time, various LWFA facilities are currently considered to host experiments aiming at stabilizing and boosting the electron bunch output quality via a trojan horse afterburner stage. Since normalized emittance and brightness can be improved by many orders of magnitude, the scheme is an ideal candidate for light sources such as free-electron-lasers and those based on Thomson scattering and betatron radiation alike.« less

Radiation transport in kinetic simulations and the influence of photoemission on electron current in self-sustaining discharges

DOE PAGES

Fierro, Andrew S.; Moore, Christopher Hudson; Scheiner, Brett; ...

2017-01-12

A kinetic description for electronic excitation of helium for principal quantum number nmore » $$\\leqslant $$ 4 has been included into a particle-in-cell (PIC) simulation utilizing direct simulation Monte Carlo (DSMC) for electron-neutral interactions. The excited electronic levels radiate state-dependent photons with wavelengths from the extreme ultraviolet (EUV) to visible regimes. Photon wavelengths are chosen according to a Voigt distribution accounting for the natural, pressure, and Doppler broadened linewidths. This method allows for reconstruction of the emission spectrum for a non-thermalized electron energy distribution function (EEDF) and investigation of high energy photon effects on surfaces, specifically photoemission. A parallel plate discharge with a fixed field (i.e. space charge neglected) is used to investigate the effects of including photoemission for a Townsend discharge. When operating at a voltage near the self-sustaining discharge threshold, it is observed that the electron current into the anode is higher when including photoemission from the cathode than without even when accounting for self-absorption from ground state atoms. As a result, the photocurrent has been observed to account for as much as 20% of the total current from the cathode under steady-state conditions.« less

Ultrafast laser-induced modifications of energy bands of non-metal crystals

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2009-10-01

Ultrafast laser-induced variations of electron energy bands of transparent solids significantly influence ionization and conduction-band electron absorption driving the initial stage of laser-induced damage (LID). The mechanisms of the variations are attributed to changing electron functions from bonding to anti-bonding configuration via laser-induced ionization; laser-driven electron oscillations in quasi-momentum space; and direct distortion of the inter-atomic potential by electric field of laser radiation. The ionization results in the band-structure modification via accumulation of broken chemical bonds between atoms and provides significant contribution to the overall modification only when enough excited electrons are accumulated in the conduction band. The oscillations are associated with modification of electron energy by pondermotive potential of the oscillations. The direct action of radiation's electric field leads to specific high-frequency Franz-Keldysh effect (FKE) spreading the allowed electron states into the bands of forbidden energy. Those processes determine the effective band gap that is a laser-driven energy gap between the modified electron energy bands. Among those mechanisms, the latter two provide reversible band-structure modification that takes place from the beginning of the ionization and are, therefore, of special interest due to their strong influence on the initial stage of the ionization. The pondermotive potential results either in monotonous increase or oscillatory variations of the effective band gap that has been taken into account in some ionization models. The classical FKE provides decrease of the band gap. We analyzing the competition between those two opposite trends of the effective-band-gap variations and discuss applications of those effects for considerations of the laser-induced damage and its threshold in transparent solids.

Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

NASA Technical Reports Server (NTRS)

Heaps, M. G.; Furman, D. R.; Green, A. E. S.

1975-01-01

A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

PubMed

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

Femtosecond laser-induced periodic surface structural formation on sapphire with nanolayered gold coating

NASA Astrophysics Data System (ADS)

Yin, Kai; Wang, Cong; Duan, Ji'an; Guo, Chunlei

2016-09-01

Sapphire has a potential as a new generation of electronics display. However, direct processing of sapphire surface by visible or near-IR laser light is challenging since sapphire is transparent to these wavelengths. In this study, we investigate the formation of femtosecond laser-induced periodic surface structures (LIPSSs) on sapphire coated with nanolayered gold film. We found a reduced threshold by about 25 % in generating uniform LIPSSs on sapphire due to the nanolayered gold film. Different thickness of nanolayered gold films are studied, and it is shown that the change in thickness does not significantly affect the threshold reduction. It is believed that the diffusion of hot electrons in the gold films increases interfacial carrier density and electron-phonon coupling that results in a reduced threshold and more uniform periodic surface structure generation.

Piezoelectrically-induced trap-depth reduction model of elastico-mechanoluminescent materials

NASA Astrophysics Data System (ADS)

Chandra, B. P.; Chandra, V. K.; Jha, Piyush

2015-03-01

Considering the detrapping of charge carriers due to reduction in trap-depth caused by piezoelectric field produced by applied pressure, an expression is derived for the detrapping rate of electrons. Then, an expression is obtained for the rate of generation of excited ions produced during capture of detrapped electrons by Eu3+ ions in persistent luminescent materials or by the energy released during electron-hole recombination in ZnS:Mn crystals. Finally, an expression is explored for the elastico-mechanoluminescence (EML) intensity, which is able to explain satisfactorily the characteristics of EML for the application of static pressure as well as for impact pressure. The total number of detrapped electrons and the total EML intensity are found to increase linearly with the electrostatic energy of the crystals in piezoelectric field. It is shown that the EML intensity should increase with the EML efficiency, number of crystallites (volume of sample), concentration of local piezoelectric regions in crystallites, piezoelectric constant of local piezoelectric regions, average length of the local piezoelectric regions, total number of electron traps, pressing rate, and applied pressure, and it should be higher for the materials having low value of threshold pressure and low value of trap-depth in unstressed condition. On the basis of the piezoelectrically-induced trap-depth reduction model of EML reported in the present investigation novel intense elastico mechanoluminescent materials having repetitive EML with undiminished intensity for successive loadings can be tailored which may find applications in sensing, imaging, lighting, colored displays, and other mechano-optical devices.

Zero photon dissociation of CS2+ in intense ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Severt, Travis; Betsch, K. J.; Zohrabi, M.; Ablikim, U.; Jochim, Bethany; Carnes, K. D.; Esry, B. D.; Ben-Itzhak, I.

2013-05-01

We measured the dissociation of a CS2+ molecular ion beam in intense laser pulses (<50 fs, <1015 W/cm2), focusing on the zero photon dissociation (ZPD) and above threshold dissociation (ATD) mechanisms. The ZPD mechanism leads to dissociation with the net absorption of zero photons in a strong field. The present work extends the idea of ZPD to more complex molecules than the H2+ discussed in literature. Preliminary data suggests that ZPD is larger than ATD for CS2+ --> C+ + S+. We speculate that a pump-dump process occurs whereby the vibrational wavepacket in the electronic ground state of CS2+ is pumped into the electronic first excited state's continuum by a single photon during the laser pulse. Once this continuum vibrational wavepacket passes the potential barrier in the ground electronic potential, the emission of a second photon is stimulated by the same laser pulse, most likely when the wavepacket moves through the internuclear distance where the two electronic states are in resonance with the driving field. A comparison is made to ZPD and ATD in the isovalent CO2+ species. Curiously, ATD is the favored mechanism in CO2+. The underlying molecular structure and dynamics determining this preference will be discussed. Supported by Chemical Sciences, Geosciences, and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michel, D. T.; Maximov, A. V.; Short, R. W.

The fraction of laser energy converted into hot electrons by the two-plasmon-decay instability is found to have different overlapped intensity thresholds for various configurations on the Omega Laser Facility [T. R. Boehly et al., Opt. Commun. 133, 495 (1997); J. H. Kelly et al., J. Phys. IV 133, 75 (2006)]. A factor-of-2 difference in the overlapped intensity threshold is observed between two- and four-beam configurations. The overlapped intensity threshold increases by a factor of 2 between the 4- and 18-beam configurations and by a factor of 3 between the 4- and 60-beam configurations. This is explained by a linear common-wavemore » model where multiple laser beams drive a common electron-plasma wave in a wavevector region that bisects the laser beams (resonant common-wave region in k-space). These experimental results indicate that the hot-electron threshold depends on the hydrodynamic parameters at the quarter-critical density surface, the configuration of the laser beams, and the sum of the intensity of the beams that share the same angle with the common-wave vector.« less

Auditory steady state response in sound field.

PubMed

Hernández-Pérez, H; Torres-Fortuny, A

2013-02-01

Physiological and behavioral responses were compared in normal-hearing subjects via analyses of the auditory steady-state response (ASSR) and conventional audiometry under sound field conditions. The auditory stimuli, presented through a loudspeaker, consisted of four carrier tones (500, 1000, 2000, and 4000 Hz), presented singly for behavioral testing but combined (multiple frequency technique), to estimate thresholds using the ASSR. Twenty normal-hearing adults were examined. The average differences between the physiological and behavioral thresholds were between 17 and 22 dB HL. The Spearman rank correlation between ASSR and behavioral thresholds was significant for all frequencies (p < 0.05). Significant differences were found in the ASSR amplitude among frequencies, and strong correlations between the ASSR amplitude and the stimulus level (p < 0.05). The ASSR in sound field testing was found to yield hearing threshold estimates deemed to be reasonably well correlated with behaviorally assessed thresholds.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romanov, Gennady; /Fermilab

CST Particle Studio combines electromagnetic field simulation, multi-particle tracking, adequate post-processing and advanced probabilistic emission model, which is the most important new capability in multipactor simulation. The emission model includes in simulation the stochastic properties of emission and adds primary electron elastic and inelastic reflection from the surfaces. The simulation of multipactor in coaxial waveguides have been performed to study the effects of the innovations on the multipactor threshold and the range over which multipactor can occur. The results compared with available previous experiments and simulations as well as the technique of MP simulation with CST PS are presented andmore » discussed.« less

Sauter-Schwinger pair creation dynamically assisted by a plane wave

NASA Astrophysics Data System (ADS)

Torgrimsson, Greger; Schneider, Christian; Schützhold, Ralf

2018-05-01

We study electron-positron pair creation by a strong and constant electric field superimposed with a weaker transversal plane wave which is incident perpendicularly (or under some angle). Comparing the fully nonperturbative approach based on the world-line instanton method with a perturbative expansion into powers of the strength of the weaker plane wave, we find good agreement—provided that the latter is carried out to sufficiently high orders. As usual for the dynamically assisted Sauter-Schwinger effect, the additional plane wave induces an exponential enhancement of the pair-creation probability if the combined Keldysh parameter exceeds a certain threshold.

Electron hybrid simulations of whistler-mode chorus generation with real parameters in the Earth's inner magnetosphere

NASA Astrophysics Data System (ADS)

Katoh, Y.; Omura, Y.

2016-12-01

Whistler-mode chorus emissions play curial roles in the evolution of radiation belt electrons. Chorus emissions are narrow band emissions observed in the typical frequency range of 0.2 to 0.8 fce0 with a gap at half the fce0, where fce0 represents the electron gyrofrequency at the magnetic equator. The generation process of chorus has been explained by the nonlinear wave growth theory [see review by Omura et al., in AGU Monograph "Dynamics of the Earth's Radiation Belts and Inner Magnetosphere, 2012] and has been reproduced by self-consistent numerical experiments [e.g., Katoh and Omura, GRL 2007, JGR 2011, 2013]. In the present study, we show the result of electron hybrid simulation of the generation process of whistler-mode chorus emissions under realistic initial conditions. We refer in-situ observations by Cluster [Santolik et al., 2003] for the initial parameters of energetic electrons and the spatial inhomogeneity of the background magnetic field. In the simulation results we observe chorus emissions with rising tones whose the spectral characteristics are consistent with the observation. We also find that the simulation results are consistently explained by the theoretically estimated threshold and optimum wave amplitudes of chorus elements based on the nonlinear wave growth theory. A series of simulations reveal properties of the chorus generation depending on the velocity distribution of energetic electrons [Katoh and Omura, JGR 2011] and the background magnetic field inhomogeneity [Katoh and Omura, JGR 2013]. These properties should be evaluated by comparison with in-situ and ground-based observations.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Polarization properties of below-threshold harmonics from aligned molecules H2+ in linearly polarized laser fields.

PubMed

Dong, Fulong; Tian, Yiqun; Yu, Shujuan; Wang, Shang; Yang, Shiping; Chen, Yanjun

2015-07-13

We investigate the polarization properties of below-threshold harmonics from aligned molecules in linearly polarized laser fields numerically and analytically. We focus on lower-order harmonics (LOHs). Our simulations show that the ellipticity of below-threshold LOHs depends strongly on the orientation angle and differs significantly for different harmonic orders. Our analysis reveals that this LOH ellipticity is closely associated with resonance effects and the axis symmetry of the molecule. These results shed light on the complex generation mechanism of below-threshold harmonics from aligned molecules.

Effects of pulse duration on magnetostimulation thresholds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saritas, Emine U., E-mail: saritas@ee.bilkent.edu.tr; Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara 06800; National Magnetic Resonance Research Center

Purpose: Medical imaging techniques such as magnetic resonance imaging and magnetic particle imaging (MPI) utilize time-varying magnetic fields that are subject to magnetostimulation limits, which often limit the speed of the imaging process. Various human-subject experiments have studied the amplitude and frequency dependence of these thresholds for gradient or homogeneous magnetic fields. Another contributing factor was shown to be number of cycles in a magnetic pulse, where the thresholds decreased with longer pulses. The latter result was demonstrated on two subjects only, at a single frequency of 1.27 kHz. Hence, whether the observed effect was due to the number ofmore » cycles or due to the pulse duration was not specified. In addition, a gradient-type field was utilized; hence, whether the same phenomenon applies to homogeneous magnetic fields remained unknown. Here, the authors investigate the pulse duration dependence of magnetostimulation limits for a 20-fold range of frequencies using homogeneous magnetic fields, such as the ones used for the drive field in MPI. Methods: Magnetostimulation thresholds were measured in the arms of six healthy subjects (age: 27 ± 5 yr). Each experiment comprised testing the thresholds at eight different pulse durations between 2 and 125 ms at a single frequency, which took approximately 30–40 min/subject. A total of 34 experiments were performed at three different frequencies: 1.2, 5.7, and 25.5 kHz. A solenoid coil providing homogeneous magnetic field was used to induce stimulation, and the field amplitude was measured in real time. A pre-emphasis based pulse shaping method was employed to accurately control the pulse durations. Subjects reported stimulation via a mouse click whenever they felt a twitching/tingling sensation. A sigmoid function was fitted to the subject responses to find the threshold at a specific frequency and duration, and the whole procedure was repeated at all relevant frequencies and pulse durations. Results: The magnetostimulation limits decreased with increasing pulse duration (T{sub pulse}). For T{sub pulse} < 18 ms, the thresholds were significantly higher than at the longest pulse durations (p < 0.01, paired Wilcoxon signed-rank test). The normalized magnetostimulation threshold (B{sub Norm}) vs duration curve at all three frequencies agreed almost identically, indicating that the observed effect is independent of the operating frequency. At the shortest pulse duration (T{sub pulse} ≈ 2 ms), the thresholds were approximately 24% higher than at the asymptotes. The thresholds decreased to within 4% of their asymptotic values for T{sub pulse} > 20 ms. These trends were well characterized (R{sup 2} = 0.78) by a stretched exponential function given by B{sub Norm}=1+αe{sup −(T{sub p}{sub u}{sub l}{sub s}{sub e}/β){sup γ}}, where the fitted parameters were α = 0.44, β = 4.32, and γ = 0.60. Conclusions: This work shows for the first time that the magnetostimulation thresholds decrease with increasing pulse duration, and that this effect is independent of the operating frequency. Normalized threshold vs duration trends are almost identical for a 20-fold range of frequencies: the thresholds are significantly higher at short pulse durations and settle to within 4% of their asymptotic values for durations longer than 20 ms. These results emphasize the importance of matching the human-subject experiments to the imaging conditions of a particular setup. Knowing the dependence of the safety limits to all contributing factors is critical for increasing the time-efficiency of imaging systems that utilize time-varying magnetic fields.« less

Field emission from isolated individual vertically aligned carbon nanocones

NASA Astrophysics Data System (ADS)

Baylor, L. R.; Merkulov, V. I.; Ellis, E. D.; Guillorn, M. A.; Lowndes, D. H.; Melechko, A. V.; Simpson, M. L.; Whealton, J. H.

2002-04-01

Field emission from isolated individual vertically aligned carbon nanocones (VACNCs) has been measured using a small-diameter moveable probe. The probe was scanned parallel to the sample plane to locate the VACNCs, and perpendicular to the sample plane to measure the emission turn-on electric field of each VACNC. Individual VACNCs can be good field emitters. The emission threshold field depends on the geometric aspect ratio (height/tip radius) of the VACNC and is lowest when a sharp tip is present. VACNCs exposed to a reactive ion etch process demonstrate a lowered emission threshold field while maintaining a similar aspect ratio. Individual VACNCs can have low emission thresholds, carry high current densities, and have long emission lifetime. This makes them very promising for various field emission applications for which deterministic placement of the emitter with submicron accuracy is needed.

Attosecond physics at the nanoscale

NASA Astrophysics Data System (ADS)

Ciappina, M. F.; Pérez-Hernández, J. A.; Landsman, A. S.; Okell, W. A.; Zherebtsov, S.; Förg, B.; Schötz, J.; Seiffert, L.; Fennel, T.; Shaaran, T.; Zimmermann, T.; Chacón, A.; Guichard, R.; Zaïr, A.; Tisch, J. W. G.; Marangos, J. P.; Witting, T.; Braun, A.; Maier, S. A.; Roso, L.; Krüger, M.; Hommelhoff, P.; Kling, M. F.; Krausz, F.; Lewenstein, M.

2017-05-01

Recently two emerging areas of research, attosecond and nanoscale physics, have started to come together. Attosecond physics deals with phenomena occurring when ultrashort laser pulses, with duration on the femto- and sub-femtosecond time scales, interact with atoms, molecules or solids. The laser-induced electron dynamics occurs natively on a timescale down to a few hundred or even tens of attoseconds (1 attosecond  =  1 as  =  10-18 s), which is comparable with the optical field. For comparison, the revolution of an electron on a 1s orbital of a hydrogen atom is  ˜152 as. On the other hand, the second branch involves the manipulation and engineering of mesoscopic systems, such as solids, metals and dielectrics, with nanometric precision. Although nano-engineering is a vast and well-established research field on its own, the merger with intense laser physics is relatively recent. In this report on progress we present a comprehensive experimental and theoretical overview of physics that takes place when short and intense laser pulses interact with nanosystems, such as metallic and dielectric nanostructures. In particular we elucidate how the spatially inhomogeneous laser induced fields at a nanometer scale modify the laser-driven electron dynamics. Consequently, this has important impact on pivotal processes such as above-threshold ionization and high-order harmonic generation. The deep understanding of the coupled dynamics between these spatially inhomogeneous fields and matter configures a promising way to new avenues of research and applications. Thanks to the maturity that attosecond physics has reached, together with the tremendous advance in material engineering and manipulation techniques, the age of atto-nanophysics has begun, but it is in the initial stage. We present thus some of the open questions, challenges and prospects for experimental confirmation of theoretical predictions, as well as experiments aimed at characterizing the induced fields and the unique electron dynamics initiated by them with high temporal and spatial resolution.

Attosecond physics at the nanoscale.

PubMed

Ciappina, M F; Pérez-Hernández, J A; Landsman, A S; Okell, W A; Zherebtsov, S; Förg, B; Schötz, J; Seiffert, L; Fennel, T; Shaaran, T; Zimmermann, T; Chacón, A; Guichard, R; Zaïr, A; Tisch, J W G; Marangos, J P; Witting, T; Braun, A; Maier, S A; Roso, L; Krüger, M; Hommelhoff, P; Kling, M F; Krausz, F; Lewenstein, M

2017-05-01

Recently two emerging areas of research, attosecond and nanoscale physics, have started to come together. Attosecond physics deals with phenomena occurring when ultrashort laser pulses, with duration on the femto- and sub-femtosecond time scales, interact with atoms, molecules or solids. The laser-induced electron dynamics occurs natively on a timescale down to a few hundred or even tens of attoseconds (1 attosecond  =  1 as  =  10 -18 s), which is comparable with the optical field. For comparison, the revolution of an electron on a 1s orbital of a hydrogen atom is  ∼152 as. On the other hand, the second branch involves the manipulation and engineering of mesoscopic systems, such as solids, metals and dielectrics, with nanometric precision. Although nano-engineering is a vast and well-established research field on its own, the merger with intense laser physics is relatively recent. In this report on progress we present a comprehensive experimental and theoretical overview of physics that takes place when short and intense laser pulses interact with nanosystems, such as metallic and dielectric nanostructures. In particular we elucidate how the spatially inhomogeneous laser induced fields at a nanometer scale modify the laser-driven electron dynamics. Consequently, this has important impact on pivotal processes such as above-threshold ionization and high-order harmonic generation. The deep understanding of the coupled dynamics between these spatially inhomogeneous fields and matter configures a promising way to new avenues of research and applications. Thanks to the maturity that attosecond physics has reached, together with the tremendous advance in material engineering and manipulation techniques, the age of atto-nanophysics has begun, but it is in the initial stage. We present thus some of the open questions, challenges and prospects for experimental confirmation of theoretical predictions, as well as experiments aimed at characterizing the induced fields and the unique electron dynamics initiated by them with high temporal and spatial resolution.

Resonances in positron-potassium (e +-K) system with natural and unnatural parities

NASA Astrophysics Data System (ADS)

Umair, M.; Jonsell, S.

2016-01-01

We present an investigation of resonances with natural and unnatural parities in the positron-potassium system using the complex scaling method. A model potential is used to represent the interaction between the core and the valence electron. Explicitly correlated Gaussian wave functions are used to represent the correlation effects between the valence electron, the positron and the K+ core. Resonance energies and widths for two partial waves (S- and P-wave) below the {{K}}(4p,5 s,5p,4 d,4f) excitation thresholds and positronium n = 2 formation threshold are calculated for natural parity. Resonance states for P e below the {{K}}(4d) excitation threshold and positronium n = 2, 3 formation thresholds are calculated for unnatural parity which has not been previously reported. Below both positronium thresholds we have found a dipole series of resonances, with binding energies scaling in good agreement with exceptions from an analytical calculation. The present results are compared with those in the literature.

Quantitative evaluation method of the threshold adjustment and the flat field correction performances of hybrid photon counting pixel detectors

NASA Astrophysics Data System (ADS)

Medjoubi, K.; Dawiec, A.

2017-12-01

A simple method is proposed in this work for quantitative evaluation of the quality of the threshold adjustment and the flat-field correction of Hybrid Photon Counting pixel (HPC) detectors. This approach is based on the Photon Transfer Curve (PTC) corresponding to the measurement of the standard deviation of the signal in flat field images. Fixed pattern noise (FPN), easily identifiable in the curve, is linked to the residual threshold dispersion, sensor inhomogeneity and the remnant errors in flat fielding techniques. The analytical expression of the signal to noise ratio curve is developed for HPC and successfully used as a fit function applied to experimental data obtained with the XPAD detector. The quantitative evaluation of the FPN, described by the photon response non-uniformity (PRNU), is measured for different configurations (threshold adjustment method and flat fielding technique) and is demonstrated to be used in order to evaluate the best setting for having the best image quality from a commercial or a R&D detector.

Identifying Turbulent Structures through Topological Segmentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bremer, Peer-Timo; Gruber, Andrea; Bennett, Janine C.

2016-01-01

A new method of extracting vortical structures from a turbulent flow is proposed whereby topological segmentation of an indicator function scalar field is used to identify the regions of influence of the individual vortices. This addresses a long-standing challenge in vector field topological analysis: indicator functions commonly used produce a scalar field based on the local velocity vector field; reconstructing regions of influence for a particular structure requires selecting a threshold to define vortex extent. In practice, the same threshold is rarely meaningful throughout a given flow. By also considering the topology of the indicator field function, the characteristics ofmore » vortex strength and extent can be separated and the ambiguity in the choice of the threshold reduced. The proposed approach is able to identify several types of vortices observed in a jet in cross-flow configuration simultaneously where no single threshold value for a selection of common indicator functions appears able to identify all of these vortex types.« less

Negative viscosity from negative compressibility and axial flow shear stiffness in a straight magnetic field

DOE PAGES

Li, J. C.; Diamond, P. H.

2017-03-23

Here, negative compressibility ITG turbulence in a linear plasma device (CSDX) can induce a negative viscosity increment. However, even with this negative increment, we show that the total axial viscosity remains positive definite, i.e. no intrinsic axial flow can be generated by pure ITG turbulence in a straight magnetic field. This differs from the case of electron drift wave (EDW) turbulence, where the total viscosity can turn negative, at least transiently. When the flow gradient is steepened by any drive mechanism, so that the parallel shear flow instability (PSFI) exceeds the ITG drive, the flow profile saturates at a level close to the value above which PSFI becomes dominant. This saturated flow gradient exceeds the PSFI linear threshold, and grows withmore » $$\

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

NASA Astrophysics Data System (ADS)

Goharrizi, A. Yazdanpanah; Sanaeepur, M.; Sharifi, M. J.

2015-09-01

Device performance of 10 nm length armchair graphene nanoribbon field effect transistors with 1.5 nm and 4 nm width (13 and 33 atoms in width respectively) are compared in terms of Ion /Ioff , trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4 nm wide device with boron nitride doping shows improved performance with respect to the 1.5 nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Tailoring the charge carrier in few layers MoS2 field-effect transistors by Au metal adsorbate

NASA Astrophysics Data System (ADS)

Singh, Arun Kumar; Pandey, Rajiv K.; Prakash, Rajiv; Eom, Jonghwa

2018-04-01

It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS2) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS2. After deposition of Au thin layer, the threshold voltages of FL MoS2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS2 nanosheets. The surface morphology of Au metal on FL MoS2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO2.

Electron-Atom Ionization Calculations using Propagating Exterior Complex Scaling

NASA Astrophysics Data System (ADS)

Bartlett, Philip

2007-10-01

The exterior complex scaling method (Science 286 (1999) 2474), pioneered by Rescigno, McCurdy and coworkers, provided highly accurate ab initio solutions for electron-hydrogen collisions by directly solving the time-independent Schr"odinger equation in coordinate space. An extension of this method, propagating exterior complex scaling (PECS), was developed by Bartlett and Stelbovics (J. Phys. B 37 (2004) L69, J. Phys. B 39 (2006) R379) and has been demonstrated to provide computationally efficient and accurate calculations of ionization and scattering cross sections over a large range of energies below, above and near the ionization threshold. An overview of the PECS method for three-body collisions and the computational advantages of its propagation and iterative coupling techniques will be presented along with results of: (1) near-threshold ionization of electron-hydrogen collisions and the Wannier threshold laws, (2) scattering cross section resonances below the ionization threshold, and (3) total and differential cross sections for electron collisions with excited targets and hydrogenic ions from low through to high energies. Recently, the PECS method has been extended to solve four-body collisions using time-independent methods in coordinate space and has initially been applied to the s-wave model for electron-helium collisions. A description of the extensions made to the PECS method to facilitate these significantly more computationally demanding calculations will be given, and results will be presented for elastic, single-excitation, double-excitation, single-ionization and double-ionization collisions.

Collisionless microtearing modes in hot tokamaks: Effect of trapped electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swamy, Aditya K.; Ganesh, R., E-mail: ganesh@ipr.res.in; Brunner, S.

2015-07-15

Collisionless microtearing modes have recently been found linearly unstable in sharp temperature gradient regions of large aspect ratio tokamaks. The magnetic drift resonance of passing electrons has been found to be sufficient to destabilise these modes above a threshold plasma β. A global gyrokinetic study, including both passing electrons as well as trapped electrons, shows that the non-adiabatic contribution of the trapped electrons provides a resonant destabilization, especially at large toroidal mode numbers, for a given aspect ratio. The global 2D mode structures show important changes to the destabilising electrostatic potential. The β threshold for the onset of the instabilitymore » is found to be generally downshifted by the inclusion of trapped electrons. A scan in the aspect ratio of the tokamak configuration, from medium to large but finite values, clearly indicates a significant destabilizing contribution from trapped electrons at small aspect ratio, with a diminishing role at larger aspect ratios.« less

Measurements of electron detection efficiencies in solid state detectors.

NASA Technical Reports Server (NTRS)

Lupton, J. E.; Stone, E. C.

1972-01-01

Detailed laboratory measurement of the electron response of solid state detectors as a function of incident electron energy, detector depletion depth, and energy-loss discriminator threshold. These response functions were determined by exposing totally depleted silicon surface barrier detectors with depletion depths between 50 and 1000 microns to the beam from a magnetic beta-ray spectrometer. The data were extended to 5000 microns depletion depth using the results of previously published Monte Carlo electron calculations. When the electron counting efficiency of a given detector is plotted as a function of energy-loss threshold for various incident energies, the efficiency curves are bounded by a smooth envelope which represents the upper limit to the detection efficiency. These upper limit curves, which scale in a simple way, make it possible to easily estimate the electron sensitivity of solid-state detector systems.

What is the surface temperature of a solid irradiated by a Petawatt laser?

NASA Astrophysics Data System (ADS)

Kemp, A. J.; Divol, L.

2016-09-01

When a solid target is irradiated by a Petawatt laser pulse, its surface is heated to tens of millions of degrees within a few femtoseconds, facilitating a diffusive heat wave and the acceleration of electrons to MeV energies into the target. Using numerically converged collisional particle-in-cell simulations, we observe a competition between two surface heating mechanisms-inverse bremsstrahlung in solid density on the one hand and electron scattering on turbulent electric fields on the other. Collisionless heating effectively dominates above the relativistic intensity threshold. Our numerical results show that a high-contrast 40 fs, f/5 laser pulse with 1 J energy will heat the skin layer to 5 keV, and the inside of the target over several microns deep to bulk temperatures in the range of 10-100 eV at solid density.

Two-Color Coherent Control of Femtosecond Above-Threshold Photoemission from a Tungsten Nanotip.

PubMed

Förster, Michael; Paschen, Timo; Krüger, Michael; Lemell, Christoph; Wachter, Georg; Libisch, Florian; Madlener, Thomas; Burgdörfer, Joachim; Hommelhoff, Peter

2016-11-18

We demonstrate coherent control of multiphoton and above-threshold photoemission from a single solid-state nanoemitter driven by a fundamental and a weak second harmonic laser pulse. Depending on the relative phase of the two pulses, electron emission is modulated with a contrast of the oscillating current signal of up to 94%. Electron spectra reveal that all observed photon orders are affected simultaneously and similarly. We confirm that photoemission takes place within 10 fs. Accompanying simulations indicate that the current modulation with its large contrast results from two interfering quantum pathways leading to electron emission.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Non-resonant multipactor--A statistical model

NASA Astrophysics Data System (ADS)

Rasch, J.; Johansson, J. F.

2012-12-01

High power microwave systems operating in vacuum or near vacuum run the risk of multipactor breakdown. In order to avoid multipactor, it is necessary to make theoretical predictions of critical parameter combinations. These treatments are generally based on the assumption of electrons moving in resonance with the electric field while traversing the gap between critical surfaces. Through comparison with experiments, it has been found that only for small system dimensions will the resonant approach give correct predictions. Apparently, the resonance is destroyed due to the statistical spread in electron emission velocity, and for a more valid description it is necessary to resort to rather complicated statistical treatments of the electron population, and extensive simulations. However, in the limit where resonance is completely destroyed it is possible to use a much simpler treatment, here called non-resonant theory. In this paper, we develop the formalism for this theory, use it to calculate universal curves for the existence of multipactor, and compare with previous results. Two important effects that leads to an increase in the multipactor threshold in comparison with the resonant prediction are identified. These are the statistical spread of impact speed, which leads to a lower average electron impact speed, and the impact of electrons in phase regions where the secondary electrons are immediately reabsorbed, leading to an effective removal of electrons from the discharge.

Photodissociation of CS from Excited Rovibrational Levels

NASA Astrophysics Data System (ADS)

Pattillo, R. J.; Cieszewski, R.; Stancil, P. C.; Forrey, R. C.; Babb, J. F.; McCann, J. F.; McLaughlin, B. M.

2018-05-01

Accurate photodissociation cross sections have been computed for transitions from the X 1Σ+ ground electronic state of CS to six low-lying excited electronic states. New ab initio potential curves and transition dipole moment functions have been obtained for these computations using the multi-reference configuration interaction approach with the Davidson correction (MRCI+Q) and aug-cc-pV6Z basis sets. State-resolved cross sections have been computed for transitions from nearly the full range of rovibrational levels of the X 1Σ+ state and for photon wavelengths ranging from 500 Å to threshold. Destruction of CS via predissociation in highly excited electronic states originating from the rovibrational ground state is found to be unimportant. Photodissociation cross sections are presented for temperatures in the range between 1000 and 10,000 K, where a Boltzmann distribution of initial rovibrational levels is assumed. Applications of the current computations to various astrophysical environments are briefly discussed focusing on photodissociation rates due to the standard interstellar and blackbody radiation fields.

Origins and Scaling of Hot-Electron Preheat in Ignition-Scale Direct-Drive Inertial Confinement Fusion Experiments.

PubMed

Rosenberg, M J; Solodov, A A; Myatt, J F; Seka, W; Michel, P; Hohenberger, M; Short, R W; Epstein, R; Regan, S P; Campbell, E M; Chapman, T; Goyon, C; Ralph, J E; Barrios, M A; Moody, J D; Bates, J W

2018-02-02

Planar laser-plasma interaction (LPI) experiments at the National Ignition Facility (NIF) have allowed access for the first time to regimes of electron density scale length (∼500 to 700  μm), electron temperature (∼3 to 5 keV), and laser intensity (6 to 16×10^{14}  W/cm^{2}) that are relevant to direct-drive inertial confinement fusion ignition. Unlike in shorter-scale-length plasmas on OMEGA, scattered-light data on the NIF show that the near-quarter-critical LPI physics is dominated by stimulated Raman scattering (SRS) rather than by two-plasmon decay (TPD). This difference in regime is explained based on absolute SRS and TPD threshold considerations. SRS sidescatter tangential to density contours and other SRS mechanisms are observed. The fraction of laser energy converted to hot electrons is ∼0.7% to 2.9%, consistent with observed levels of SRS. The intensity threshold for hot-electron production is assessed, and the use of a Si ablator slightly increases this threshold from ∼4×10^{14} to ∼6×10^{14}  W/cm^{2}. These results have significant implications for mitigation of LPI hot-electron preheat in direct-drive ignition designs.

Pulse length of ultracold electron bunches extracted from a laser cooled gas

PubMed Central

Franssen, J. G. H.; Frankort, T. L. I.; Vredenbregt, E. J. D.; Luiten, O. J.

2017-01-01

We present measurements of the pulse length of ultracold electron bunches generated by near-threshold two-photon photoionization of a laser-cooled gas. The pulse length has been measured using a resonant 3 GHz deflecting cavity in TM110 mode. We have measured the pulse length in three ionization regimes. The first is direct two-photon photoionization using only a 480 nm femtosecond laser pulse, which results in short (∼15 ps) but hot (∼104 K) electron bunches. The second regime is just-above-threshold femtosecond photoionization employing the combination of a continuous-wave 780 nm excitation laser and a tunable 480 nm femtosecond ionization laser which results in both ultracold (∼10 K) and ultrafast (∼25 ps) electron bunches. These pulses typically contain ∼103 electrons and have a root-mean-square normalized transverse beam emittance of 1.5 ± 0.1 nm rad. The measured pulse lengths are limited by the energy spread associated with the longitudinal size of the ionization volume, as expected. The third regime is just-below-threshold ionization which produces Rydberg states which slowly ionize on microsecond time scales. PMID:28396879

Determining the Critical Dose Threshold of Electron-Induced Electron Yield for Minimally Charged Highly Insulating Materials

NASA Astrophysics Data System (ADS)

Hoffmann, Ryan; Dennison, J. R.; Abbott, Jonathan

2006-03-01

When incident energetic electrons interact with a material, they excite electrons within the material to escape energies. The electron emission is quantified as the ratio of emitted electrons to incident particle flux, termed electron yield. Measuring the electron yield of insulators is difficult due to dynamic surface charge accumulation which directly affects landing energies and the potential barrier that emitted electrons must overcome. Our recent measurements of highly insulating materials have demonstrated significant changes in total yield curves and yield decay curves for very small electron doses equivalent to a trapped charge density of <10^10 electrons /cm^3. The Chung-Everhart theory provides a basic model for the behavior of the electron emission spectra which we relate to yield decay curves as charge is allowed to accumulate. Yield measurements as a function of dose for polyimide (Kapton^TM) and microcrystalline SiO2 will be presented. We use our data and model to address the question of whether there is a minimal dose threshold at which the accumulated charge no longer affects the yield.

An improved experimental scheme for simultaneous measurement of high-resolution zero electron kinetic energy (ZEKE) photoelectron and threshold photoion (MATI) spectra

NASA Astrophysics Data System (ADS)

Michels, François; Mazzoni, Federico; Becucci, Maurizio; Müller-Dethlefs, Klaus

2017-10-01

An improved detection scheme is presented for threshold ionization spectroscopy with simultaneous recording of the Zero Electron Kinetic Energy (ZEKE) and Mass Analysed Threshold Ionisation (MATI) signals. The objective is to obtain accurate dissociation energies for larger molecular clusters by simultaneously detecting the fragment and parent ion MATI signals with identical transmission. The scheme preserves an optimal ZEKE spectral resolution together with excellent separation of the spontaneous ion and MATI signals in the time-of-flight mass spectrum. The resulting improvement in sensitivity will allow for the determination of dissociation energies in clusters with substantial mass difference between parent and daughter ions.

Prewhitening of Colored Noise Fields for Detection of Threshold Sources

DTIC Science & Technology

1993-11-07

determines the noise covariance matrix, prewhitening techniques allow detection of threshold sources. The multiple signal classification ( MUSIC ...SUBJECT TERMS 1S. NUMBER OF PAGES AR Model, Colored Noise Field, Mixed Spectra Model, MUSIC , Noise Field, 52 Prewhitening, SNR, Standardized Test...EXAMPLE 2: COMPLEX AR COEFFICIENT .............................................. 5 EXAMPLE 3: MUSIC IN A COLORED BACKGROUND NOISE ...................... 6

Influence of Electron Molecule Resonant Vibrational Collisions over the Symmetric Mode and Direct Excitation-Dissociation Cross Sections of CO2 on the Electron Energy Distribution Function and Dissociation Mechanisms in Cold Pure CO2 Plasmas.

PubMed

Pietanza, L D; Colonna, G; Laporta, V; Celiberto, R; D'Ammando, G; Laricchiuta, A; Capitelli, M

2016-05-05

A new set of electron-vibrational (e-V) processes linking the first 10 vibrational levels of the symmetric mode of CO2 is derived by using a decoupled vibrational model and inserted in the Boltzmann equation for the electron energy distribution function (eedf). The new eedf and dissociation rates are in satisfactory agreement with the corresponding ones obtained by using the e-V cross sections reported in the database of Hake and Phelps (H-P). Large differences are, on the contrary, found when the experimental dissociation cross sections of Cosby and Helm are inserted in the Boltzman equation. Comparison of the corresponding rates with those obtained by using the low-energy threshold energy, reported in the H-P database, shows differences up to orders of magnitude, which decrease with the increasing of the reduced electric field. In all cases, we show the importance of superelastic vibrational collisions in affecting eedf and dissociation rates either in the direct electron impact mechanism or in the pure vibrational mechanism.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy

Using aluminum titanium oxide (AlTiO, an alloy of Al{sub 2}O{sub 3} and TiO{sub 2}) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ∼25 ms and ∼3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5–0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents aremore » analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.« less

Science Enabling ASICs and FEEs for the JUICE and JEO Missions

NASA Technical Reports Server (NTRS)

Paschalidis, Nicholas; Sittler, Ed; Cooper, John; Christian, Eric; Moore, Tom

2011-01-01

A family of science enabling radiation hard Application Specific Integrated Circuits (ASICs), Front End Electronics (FEEs) and Event Processing Systems, with flight heritage on many NASA missions, is presented. These technologies play an important role in the miniaturization of instruments -and spacecraft systems- at the same time increasing performance and reducing power. The technologies target time of flight, position sensing, and energy measurements as well as standard housekeeping and telemetry functions for particle and fields instruments, but find applications in other instrument categories too. More specifically the technologies include: the TOF chip, 1D and 2D Delay Lines with MCP detectors, for high precision fast and low power time of flight and position sensing; the Energy chip for multichannel SSD readout with time over threshold and standard voltage read out for TDC and ADC digitization; Fast multi channel read out chip with commandable thresholds; the TRIO chip for multiplexed ADC and housekeeping etc. It should be mentioned that the ASICs include basic trigger capabilities to enable random event processing in a heavy background of penetrators and UV foreground. Typical instruments include time of flight versus energy and look angle particle analyzers such as: plasma composition, energetic particle, neutral atom imaging as well as fast plasma and deltaE/E ion/electron telescopes. Flight missions include: Cassini/LEMMS, IMAGE/HENA, MESSENGER/EPPS/MLA/X-ray/MLA, STEREO, PLUTO-NH/PEPSSI/LORI, IBEX-Lo, JUNO/JEDI, RBSP/RBSPICE, MMS/HPCA/EPD, SO/SIS. Given the proven capability on heavy radiation missions such as JUNO, MMS and RBSB, as well diverse long duration missions such as MESSENGER, PLUTO and Cassini, it is expected that these technologies will play an important role in the particle and fields (at least) instruments on the upcoming JUICE and JEO missions.

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates.

PubMed

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

2018-08-17

Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 -SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm -2 on hBN substrate as compared to 1.1 × 10 12 cm -2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.

Electronic bidirectional valve circuit prevents crossover distortion and threshold effect

NASA Technical Reports Server (NTRS)

Kernick, A.

1966-01-01

Four-terminal network forms a bidirectional valve which will switch or alternate an ac signal without crossover distortion or threshold effect. In this network, an isolated control signal is sufficient for circuit turn-on.

Increasing the oscillation frequency of strong magnetic fields above 101 kHz significantly raises peripheral nerve excitation thresholds

PubMed Central

Weinberg, Irving N.; Stepanov, Pavel Y.; Fricke, Stanley T.; Probst, Roland; Urdaneta, Mario; Warnow, Daniel; Sanders, Howard; Glidden, Steven C.; McMillan, Alan; Starewicz, Piotr M.; Reilly, J. Patrick

2012-01-01

Purpose: A time-varying magnetic field can cause unpleasant peripheral nerve stimulation (PNS) when the maximum excursion of the magnetic field (ΔB) is above a frequency-dependent threshold level [P. Mansfield and P. R. Harvey, Magn. Reson. Med. 29, 746–758 (1993)]. Clinical and research magnetic resonance imaging (MRI) gradient systems have been designed to avoid such bioeffects by adhering to regulations and guidelines established on the basis of clinical trials. Those trials, generally employing sinusoidal waveforms, tested human responses to magnetic fields at frequencies between 0.5 and 10 kHz [W. Irnich and F. Schmitt, Magn. Reson. Med. 33, 619–623 (1995), T. F. Budinger et al., J. Comput. Assist. Tomogr. 15, 909–914 (1991), and D. J. Schaefer et al., J. Magn. Reson. Imaging 12, 20–29 (2000)]. PNS thresholds for frequencies higher than 10 kHz had been extrapolated, using physiological models [J. P. Reilly et al., IEEE Trans. Biomed. Eng. BME-32(12), 1001–1011 (1985)]. The present study provides experimental data on human PNS thresholds to oscillating magnetic field stimulation from 2 to 183 kHz. Sinusoidal waveforms were employed for several reasons: (1) to facilitate comparison with earlier reports that used sine waves, (2) because prior designers of fast gradient hardware for generalized waveforms (e.g., including trapezoidal pulses) have employed quarter-sine-wave resonant circuits to reduce the rise- and fall-times of pulse waveforms, and (3) because sinusoids are often used in fast pulse sequences (e.g., spiral scans) [S. Nowak, U.S. patent 5,245,287 (14 September 1993) and K. F. King and D. J. Schaefer, J. Magn. Reson. Imaging 12, 164–170 (2000)]. Methods: An IRB-approved prospective clinical trial was performed, involving 26 adults, in which one wrist was exposed to decaying sinusoidal magnetic field pulses at frequencies from 2 to 183 kHz and amplitudes up to 0.4 T. Sham exposures (i.e., with no magnetic fields) were applied to all subjects. Results: For 0.4 T pulses at 2, 25, 59, 101, and 183 kHz, stimulation was reported by 22 (84.6%), 24 (92.3%), 15 (57.7%), 2 (7.7%), and 1 (3.8%) subjects, respectively. Conclusions: The probability of PNS due to brief biphasic time-varying sinusoidal magnetic fields with magnetic excursions up to 0.4 T is shown to decrease significantly at and above 101 kHz. This phenomenon may have particular uses in dynamic scenarios (e.g., cardiac imaging) and in studying processes with short decay times (e.g., electron paramagnetic resonance imaging, bone and solids imaging). The study suggests the possibility of new designs for human and preclinical MRI systems that may be useful in clinical practice and scientific research. PMID:22559628

Continuous-wave optical parametric oscillators on their way to the terahertz range

NASA Astrophysics Data System (ADS)

Sowade, Rosita; Breunig, Ingo; Kiessling, Jens; Buse, Karsten

2010-02-01

Continuous-wave optical parametric oscillators (OPOs) are known to be working horses for spectroscopy in the near- and mid-infrared. However, strong absorption in nonlinear media like lithium niobate complicates the generation of far-infrared light. This absorption leads to pump thresholds vastly exceeding the power of standard pump lasers. Our first approach was, therefore, to combine the established technique of photomixing with optical parametric oscillators. Here, two OPOs provide one wave each, with a tunable difference frequency. These waves are combined to a beat signal as a source for photomixers. Terahertz radiation between 0.065 and 1.018 THz is generated with powers in the order of nanowatts. To overcome the upper frequency limit of the opto-electronic photomixers, terahertz generation has to rely entirely on optical methods. Our all-optical approach, getting around the high thresholds for terahertz generation, is based on cascaded nonlinear processes: the resonantly enhanced signal field, generated in the primary parametric process, is intense enough to act as the pump for a secondary process, creating idler waves with frequencies in the terahertz regime. The latter ones are monochromatic and tunable with detected powers of more than 2 μW at 1.35 THz. Thus, continuous-wave optical parametric oscillators have entered the field of terahertz photonics.

Redox processes at a nanostructured interface under strong electric fields.

PubMed

Steurer, Wolfram; Surnev, Svetlozar; Netzer, Falko P; Sementa, Luca; Negreiros, Fabio R; Barcaro, Giovanni; Durante, Nicola; Fortunelli, Alessandro

2014-09-21

Manipulation of chemistry and film growth via external electric fields is a longstanding goal in surface science. Numerous systems have been predicted to show such effects but experimental evidence is sparse. Here we demonstrate in a custom-designed UHV apparatus that the application of spatially extended, homogeneous, very high (>1 V nm(-1)) DC-fields not only changes the system energetics but triggers dynamic processes which become important much before static contributions appreciably modify the potential energy landscape. We take a well characterized ultrathin NiO film on a Ag(100) support as a proof-of-principle test case, and show how it gets reduced to supported Ni clusters under fields exceeding the threshold of +0.9 V nm(-1). Using an effective model, we trace the observed interfacial redox process down to a dissociative electron attachment resonant mechanism. The proposed approach can be easily implemented and generally applied to a wide range of interfacial systems, thus opening new opportunities for the manipulation of film growth and reaction processes at solid surfaces under strong external fields.

Bloch oscillations in organic and inorganic polymers

NASA Astrophysics Data System (ADS)

Ribeiro, Luiz Antonio; Ferreira da Cunha, Wiliam; de Almeida Fonseca, Antonio Luciano; e Silva, Geraldo Magela

2017-04-01

The transport of polarons above the mobility threshold in organic and inorganic polymers is theoretically investigated in the framework of a one-dimensional tight-binding model that includes lattice relaxation. The computational approach is based on parameters for which the model Hamiltonian suitably describes different polymer lattices in the presence of external electric fields. Our findings show that, above critical field strengths, a dissociated polaron moves through the polymer lattice as a free electron performing Bloch oscillations. These critical electric fields are considerably smaller for inorganic lattices in comparison to organic polymers. Interestingly, for inorganic lattices, the free electron propagates preserving charge and spin densities' localization which is a characteristic of a static polaron. Moreover, in the turning points of the spatial Bloch oscillations, transient polaron levels are formed inside the band gap, thus generating a fully characterized polaron structure. For the organic case, on the other hand, no polaron signature is observed: neither in the shape of the distortion—those polaron profile signatures are absent—nor in the energy levels—as no such polaron levels are formed during the simulation. These results solve controversial aspects concerning Bloch oscillations recently reported in the literature and may enlighten the understanding about the charge transport mechanism in polymers above their mobility edge.

[The discomfort threshold studied in operators at the control consoles in automated production with a view to its use in job selection].

PubMed

Tsaneva, L

1993-01-01

The results from the investigation of the threshold of discomfort in 385 operators from firm "Kremikovtsi" are discussed. The most expressed changes are found in operators with increased tonal auditory threshold up to 45 and above 50 dB, in high confidential probability. The observed changes in the threshold of discomfort are classified into 3 groups: 1). Raised tonal auditory threshold (up to 30 dB) without decrease in the threshold of discomfort; 2). Decreased threshold of discomfort (with about 15-20 dB) in raised tonal auditory threshold (up to 45 dB); 3). Decreased threshold of discomfort on the background of raised (above 50 dB) tonal auditory threshold. On 4 figures are represented audiograms, illustrating the state of tonal auditory threshold, the field of hearing and the threshold of discomfort. The field of hearing of the operators from the III and IV groups is narrowed, and in the latter also deformed. The explanation of this pathophysiological phenomenon is related to the increased effect of the sound irritation and the presence of recruitment phenomenon with possible engagement of the central end of the auditory analyser. It is underlined, that the threshold of discomfort is sensitive index for the state of the individual norms of each operator for the speech-sound-noise discomfort.(ABSTRACT TRUNCATED AT 250 WORDS)

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

NASA Astrophysics Data System (ADS)

Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

2016-05-01

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm ), the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

Above-threshold ionization in multicenter molecules: The role of the initial state

NASA Astrophysics Data System (ADS)

Suárez, Noslen; Chacón, Alexis; Pisanty, Emilio; Ortmann, Lisa; Landsman, Alexandra S.; Picón, Antonio; Biegert, Jens; Lewenstein, Maciej; Ciappina, Marcelo F.

2018-03-01

A possible route to extract electronic and nuclear dynamics from molecular targets with attosecond temporal and nanometer spatial resolution is to employ recolliding electrons as "probes." The recollision process in molecules is, however, very challenging to treat using ab initio approaches. Even for the simplest diatomic systems, such as H2, today's computational capabilities are not enough to give a complete description of the electron and nuclear dynamics initiated by a strong laser field. As a consequence, approximate qualitative descriptions are called to play an important role. In this paper we extend the work presented in Suárez et al. [N. Suárez, A. Chacón, J. A. Pérez-Hernández, J. Biegert, M. Lewenstein, and M. F. Ciappina, High-order-harmonic generation in atomic and molecular systems, Phys. Rev. A 95, 033415 (2017), 10.1103/PhysRevA.95.033415] to three-center molecular targets. Additionally, we incorporate a more accurate description of the molecular ground state, employing information extracted from quantum chemistry software packages. This step forward allows us to include, in a detailed way, both the molecular symmetries and nodes present in the high-occupied molecular orbital. We are able, on the one hand, to keep our formulation as analytical as in the case of diatomics and, on the other hand, to still give a complete description of the underlying physics behind the above-threshold ionization process. The application of our approach to complex multicenter—with more than three centers—targets appears to be straightforward.

Void structure of O+ ions in the inner magnetosphere observed by the Van Allen Probes

NASA Astrophysics Data System (ADS)

Nakayama, Y.; Ebihara, Y.; Ohtani, S.; Gkioulidou, M.; Takahashi, K.; Kistler, L. M.; Tanaka, T.

2016-12-01

The Van Allen Probes Helium Oxygen Proton Electron instrument observed a new type of enhancement of O+ ions in the inner magnetosphere during substorms. As the satellite moved outward in the premidnight sector, the flux of the O+ ions with energy 10 keV appeared first in the energy-time spectrograms. Then, the enhancement of the flux spread toward high and low energies. The enhanced flux of the O+ ions with the highest energy remained, whereas the flux of the ions with lower energy vanished near apogee, forming what we call the void structure. The structure cannot be found in the H+ spectrogram. We studied the generation mechanism of this structure by using numerical simulation. We traced the trajectories of O+ ions in the electric and magnetic fields from the global magnetohydrodynamics simulation and calculated the flux of O+ ions in the inner magnetosphere in accordance with the Liouville theorem. The simulated spectrograms are well consistent with the ones observed by Van Allen Probes. We suggest the following processes. (1) When magnetic reconnection starts, an intensive equatorward and tailward plasma flow appears in the plasma lobe. (2) The flow transports plasma from the lobe to the plasma sheet where the radius of curvature of the magnetic field line is small. (3) The intensive dawn-dusk electric field transports the O+ ions earthward and accelerates them nonadiabatically to an energy threshold; (4) the void structure appears at energies below the threshold.

Behaviour of nematic liquid crystals doped with ferroelectric nanoparticles in the presence of an electric field

NASA Astrophysics Data System (ADS)

Emdadi, M.; Poursamad, J. B.; Sahrai, M.; Moghaddas, F.

2018-06-01

A planar nematic liquid crystal cell (NLC) doped with spherical ferroelectric nanoparticles is considered. Polarisation of the nanoparticles are assumed to be along the NLC molecules parallel and antiparallel to the director with equal probability. The NLC molecules anchoring to the cell walls are considered to be strong, while soft anchoring at the nanoparticles surface is supposed. Behaviour of the NLC molecules and nanoparticles in the presence of a perpendicular electric field to the NLC cell is theoretically investigated. The electric field of the nanoparticles is taken into account in the calculations. Freedericksz transition (FT) threshold field in the presence of nanoparticles is found. Then, the director and particles reorientations for the electric fields larger than the threshold field are studied. Measuring the onset of the nanoparticles reorientation is proposed as a new method for the FT threshold measurement.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Particle acceleration in laser-driven magnetic reconnection

DOE PAGES

Totorica, S. R.; Abel, T.; Fiuza, F.

2017-04-03

Particle acceleration induced by magnetic reconnection is thought to be a promising candidate for producing the nonthermal emissions associated with explosive phenomena such as solar flares, pulsar wind nebulae, and jets from active galactic nuclei. Laboratory experiments can play an important role in the study of the detailed microphysics of magnetic reconnection and the dominant particle acceleration mechanisms. We have used two- and three-dimensional particle-in-cell simulations to study particle acceleration in high Lundquist number reconnection regimes associated with laser-driven plasma experiments. For current experimental conditions, we show that nonthermal electrons can be accelerated to energies more than an order ofmore » magnitude larger than the initial thermal energy. The nonthermal electrons gain their energy mainly from the reconnection electric field near the X points, and particle injection into the reconnection layer and escape from the finite system establish a distribution of energies that resembles a power-law spectrum. Energetic electrons can also become trapped inside the plasmoids that form in the current layer and gain additional energy from the electric field arising from the motion of the plasmoid. We compare simulations for finite and infinite periodic systems to demonstrate the importance of particle escape on the shape of the spectrum. Based on our findings, we provide an analytical estimate of the maximum electron energy and threshold condition for observing suprathermal electron acceleration in terms of experimentally tunable parameters. We also discuss experimental signatures, including the angular distribution of the accelerated particles, and construct synthetic detector spectra. Finally, these results open the way for novel experimental studies of particle acceleration induced by reconnection.« less

Electron elevator: Excitations across the band gap via a dynamical gap state

DOE PAGES

Lim, Anthony; Foulkes, W. M. C.; Horsfield, A. P.; ...

2016-01-27

We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. Lastly, an analysis of the time dependence of the transition rates using coupled linear rate equations enables one of themore » excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.« less

Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

PubMed

Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

2016-01-29

We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

Effect of neoclassical toroidal viscosity on error-field penetration thresholds in tokamak plasmas.

PubMed

Cole, A J; Hegna, C C; Callen, J D

2007-08-10

A model for field-error penetration is developed that includes nonresonant as well as the usual resonant field-error effects. The nonresonant components cause a neoclassical toroidal viscous torque that keeps the plasma rotating at a rate comparable to the ion diamagnetic frequency. The new theory is used to examine resonant error-field penetration threshold scaling in Ohmic tokamak plasmas. Compared to previous theoretical results, we find the plasma is less susceptible to error-field penetration and locking, by a factor that depends on the nonresonant error-field amplitude.

Damage threshold of platinum coating used for optics for self-seeding of soft x-ray free electron laser

DOE PAGES

Krzywinski, Jacek; Cocco, Daniele; Moeller, Stefan; ...

2015-02-23

We investigated the experimental damage threshold of platinum coating on a silicon substrate illuminated by soft x-ray radiation at grazing incidence angle of 2.1 deg. The coating was the same as the blazed grating used for the soft X-ray self-seeding optics of the Linac Coherent Light Source free electron laser. The irradiation condition was chosen such that the absorbed dose was similar to the maximum dose expected for the grating. The expected dose was simulated by solving the Helmholtz equation in non-homogenous media. The experiment was performed at 900 eV photon energy for both single pulse and multi-shot conditions. Wemore » have not observed single shot damage. This corresponds to a single shot damage threshold being higher than 3 J/cm 2. The multiple shot damage threshold measured for 10 shots and about 600 shots was determined to be 0.95 J/cm 2 and 0.75 J/cm 2 respectively. The damage threshold occurred at an instantaneous dose which is higher that the melt dose of platinum.« less

The simulation of electromagnetically driven strong Langmuir turbulence effect on the backscatter radiation from ionosphere

NASA Astrophysics Data System (ADS)

Kochetov, Andrey

2016-07-01

Numerical simulations of the dynamics of electromagnetic fields in a smoothly inhomogeneous nonlinear plasma layer in frameworks of the nonlinear Schrödinger equation with boundary conditions responsible for the pumping of the field in the layer by an incident wave and the inverse radiation losses supplemented the volume field dissipation due to the electromagnetic excitation of Langmuir turbulence are carried out. The effects of the threshold of non-linearity and it's evolution, of the threshold and saturation levels of dissipation in the vicinity of the wave reflection point on the features of the dynamics of reflection and absorption indexes are investigated. We consider the hard drive damping depending on the local field amplitude and hysteresis losses with different in several times "on" and "off" absorption thresholds as well. The dependence of the thresholds of the steady-state, periodic and chaotic regimes of plasma-wave interaction on the scenario of turbulence evolution is demonstrated. The results are compared with the experimental observations of Langmuir stage ionospheric modification.

Perceptual thresholds for non-ideal diffuse field reverberation.

PubMed

Romblom, David; Guastavino, Catherine; Depalle, Philippe

2016-11-01

The objective of this study is to understand listeners' sensitivity to directional variations in non-ideal diffuse field reverberation. An ABX discrimination test was conducted using a semi-spherical 28-loudspeaker array; perceptual thresholds were estimated by systematically varying the level of a segment of loudspeakers for lateral, height, and frontal conditions. The overall energy was held constant using a gain compensation scheme. When compared to an ideal diffuse field, the perceptual threshold for detection is -2.5 dB for the lateral condition, -6.8 dB for the height condition, and -3.2 dB for the frontal condition. Measurements of the experimental stimuli were analyzed using a Head and Torso Simulator as well as with opposing cardioid microphones aligned on the three Cartesian axes. Additionally, opposing cardioid measurements made in an acoustic space demonstrate that level differences corresponding to the perceptual thresholds can be found in practice. These results suggest that non-ideal diffuse field reverberation may be a previously unrecognized component of spatial impression.

Reading for Integration, Identifying Complementary Threshold Concepts: The ACRL "Framework" in Conversation with "Naming What We Know: Threshold Concepts of Writing"

ERIC Educational Resources Information Center

Johnson, Brittney; McCracken, I. Moriah

2016-01-01

In 2015, threshold concepts formed the foundation of two disciplinary documents: The "ACRL Framework for Information Literacy" (2015) and "Naming What We Know: Threshold Concepts of Writing Studies" (2015). While there is no consensus in the fields about the value of threshold concepts in teaching, reading the six Frames in the…

Ulysses Observations of the Magnetic Connectivity between CMEs and the Sun

NASA Technical Reports Server (NTRS)

Riley, Pete; Gosling, J. T.; Crooker, N. U.

2004-01-01

We have investigated the magnetic connectivity of coronal mass ejections (CMEs) to the Sun using Ulysses observations of suprathermal electrons at various distances between 1 AU and 5.2 AU. Drawing on ideas concerning the eruption and evolution of CMEs, we had anticipated that there might be a tendency for CMEs to contain progressively more open field lines, as reconnection back at the Sun either opened or completely disconnected previously closed field lines threading the CMEs. Our results, however, did not yield any discernible trend. By combining the potential contribution of CMEs to the heliospheric flux with the observed build-up of flux during the course of the solar cycle we also derive a lower limit for the reconnection rate of CMEs that is sufficient to avoid the "flux catastrophe" paradox. This rate is well below our threshold of detectability.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Evaluation of Maryland abutment scour equation through selected threshold velocity methods

USGS Publications Warehouse

Benedict, S.T.

2010-01-01

The U.S. Geological Survey, in cooperation with the Maryland State Highway Administration, used field measurements of scour to evaluate the sensitivity of the Maryland abutment scour equation to the critical (or threshold) velocity variable. Four selected methods for estimating threshold velocity were applied to the Maryland abutment scour equation, and the predicted scour to the field measurements were compared. Results indicated that performance of the Maryland abutment scour equation was sensitive to the threshold velocity with some threshold velocity methods producing better estimates of predicted scour than did others. In addition, results indicated that regional stream characteristics can affect the performance of the Maryland abutment scour equation with moderate-gradient streams performing differently from low-gradient streams. On the basis of the findings of the investigation, guidance for selecting threshold velocity methods for application to the Maryland abutment scour equation are provided, and limitations are noted.

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

NASA Astrophysics Data System (ADS)

Baang, Sungkeun; Lee, Hyeonju; Zhang, Xue; Park, Jaehoon; Kim, Won-Pyo; Ko, Young-Woong; Piao, Shang Hao; Choi, Hyoung Jin; Kwon, Jin-Hyuk; Bae, Jin-Hyuk

2018-01-01

We investigate the operational stability of bottom-gate/top-contact-structured indium-oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. Based on the thermogravimetric analysis of the In2O3 precursor solution, we utilize a thermal annealing process at 400 °C for 40 min to prepare the In2O3 films. The results of X-ray photoemission spectroscopy and field-emission scanning electron microscopy show that the electron is the majority carrier in the In2O3 semiconductor film prepared by a spin-coating method and that the film has a polycrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. When constant drain and gate voltages are applied, these TFTs in atmospheric air exhibit a more acute decay in the drain currents with time compared to that observed under vacuum. In the positive gate-bias stress experiments, a decrease in the field-effect mobility and a positive shift in the threshold voltage are invariably observed both in atmospheric air and under vacuum, but such characteristic variations are also found to be more pronounced for the atmospheric-air case. These results are explained in terms of the electron-trapping phenomenon at the grain boundaries in the In2O3 semiconductor, as well as the electrostatic interactions between electrons and polar water molecules.

Development of an ion time-of-flight spectrometer for neutron depth profiling

NASA Astrophysics Data System (ADS)

Cetiner, Mustafa Sacit

Ion time-of-flight spectrometry techniques are investigated for applicability to neutron depth profiling. Time-of-flight techniques are used extensively in a wide range of scientific and technological applications including energy and mass spectroscopy. Neutron depth profiling is a near-surface analysis technique that gives concentration distribution versus depth for certain technologically important light elements. The technique uses thermal or sub-thermal neutrons to initiate (n, p) or (n, alpha) reactions. Concentration versus depth distribution is obtained by the transformation of the energy spectrum into depth distribution by using stopping force tables of the projectiles in the substrate, and by converting the number of counts into concentration using a standard sample of known dose value. Conventionally, neutron depth profiling measurements are based on charged particle spectrometry, which employs semiconductor detectors such as a surface barrier detector (SBD) and the associated electronics. Measurements with semiconductor detectors are affected by a number of broadening mechanisms, which result from the interactions between the projectile ion and the detector material as well as fluctuations in the signal generation process. These are inherent features of the detection mechanism that involve the semiconductor detectors and cannot be avoided. Ion time-of-flight spectrometry offers highly precise measurement capabilities, particularly for slow particles. For high-energy low-mass particles, measurement resolution tends to degrade with all other parameters fixed. The threshold for more precise ion energy measurements with respect to conventional techniques, such as direct energy measurement by a surface barrier detector, is directly related to the design and operating parameters of the device. Time-of-flight spectrometry involves correlated detection of two signals by a coincidence unit. In ion time-of-flight spectroscopy, the ion generates the primary input signal. Without loss of generality, the secondary signal is obtained by the passage of the ion through a thin carbon foil, which produces ion-induced secondary electron emission (IISEE). The time-of-flight spectrometer physically acts as an ion/electron separator. The electrons that enter the active volume of the spectrometer are transported onto the microchannel plate detector to generate the secondary signal. The electron optics can be designed in variety of ways depending on the nature of the measurement and physical requirements. Two ion time-of-flight spectrometer designs are introduced: the parallel electric and magnetic (PEM) field spectrometer and the cross electric and magnetic (CEM) field spectrometer. The CEM field spectrometers have been extensively used in a wide range of applications where precise mass differentiation is required. The PEM field spectrometers have lately found interest in mass spectroscopy applications. The application of the PEM field spectrometer for energy measurements is a novel approach. The PEM field spectrometer used in the measurements employs axial electric and magnetic fields along the nominal direction of the incident ion. The secondary electrons are created by a thin carbon foil on the entrance disk and transported on the microchannel plate that faces the carbon foil. The initial angular distribution of the secondary electrons has virtually no effect on the transport time of the secondary electrons from the surface of the carbon foil to the electron microchannel plate detector. Therefore, the PEM field spectrometer can offer high-resolution energy measurement for relatively lower electric fields. The measurements with the PEM field spectrometer were made with the Tandem linear particle accelerator at the IBM T. J. Watson Research Center at Yorktown Heights, NY. The CEM field spectrometer developed for the thesis employs axial electric field along the nominal direction of the ion, and has perpendicular magnetic field. As the electric field accelerates and then decelerates the emitted secondary electron beam, the magnetic field steers the beam away from the source and focuses it onto the electron microchannel plate detector. The initial momentum distribution of the electron beam is observed to have profound effect on the electron transport time. Hence, the CEM field spectrometer measurements suffer more from spectral broadening at similar operating parameters. The CEM field spectrometer measurements were obtained with a 210Po alpha source at the Penn State Radiation Science and Engineering Center, University Park, PA. Although the PEM field spectrometer suffers less from electron transport time dispersion, the CEM field spectrometer is more suited for application to neutron depth profiling. The multiple small-diameter apertures used in the PEM field configuration considerably reduces the geometric efficiency of the spectrometer. Most of the neutron depth profiling measurements, where isotropic emission of charged particles is observed, have relatively low count rates; hence, high detection efficiency is essential.

An evaluation of corn earworm damage and thresholds in soybean

NASA Astrophysics Data System (ADS)

Adams, Brian Patrick

Interactions between corn earworm, Helicoverpa zea (Boddie), and soybean, Glycine max L. (Merrill), were investigated in the Mid-South to evaluate thresholds and damage levels. Field studies were conducted in both indeterminate and determinate modern cultivars to evaluate damage, critical injury levels, and soybean response to simulated corn earworm injury. Field studies were also conducted to evaluate the response of indeterminate cultivars to infestations of corn earworm. Field studies were also conducted to investigate the relationship between pyrethroid insecticide application and corn earworm oviposition in soybean. Results of field studies involving simulated corn earworm damage indicated the need for a dynamic threshold that becomes more conservative as soybean phenology progressed through the reproductive growth stages. This suggested that soybean was more tolerant to fruit loss during the earlier reproductive stages and was able to compensate for fruit loss better during this time than at later growth stages. Results of field studies involving infestations of corn earworm indicated that current thresholds are likely too liberal. This resulted in economic injury level tables being constructed based upon a range of crop values and control costs, however, a general action threshold was also recommended for indeterminate soybean in the Mid-South. Field study results investigating the relationship of pyrethroid application and corn earworm oviposition indicated that even in the presence of an insecticide, corn earworm prefers to oviposit in the upper portion of the canopy, as well as on the leaves as opposed to all other plant parts, consistent with all previous literature.

Robust optimization of the laser induced damage threshold of dielectric mirrors for high power lasers.

PubMed

Chorel, Marine; Lanternier, Thomas; Lavastre, Éric; Bonod, Nicolas; Bousquet, Bruno; Néauport, Jérôme

2018-04-30

We report on a numerical optimization of the laser induced damage threshold of multi-dielectric high reflection mirrors in the sub-picosecond regime. We highlight the interplay between the electric field distribution, refractive index and intrinsic laser induced damage threshold of the materials on the overall laser induced damage threshold (LIDT) of the multilayer. We describe an optimization method of the multilayer that minimizes the field enhancement in high refractive index materials while preserving a near perfect reflectivity. This method yields a significant improvement of the damage resistance since a maximum increase of 40% can be achieved on the overall LIDT of the multilayer.

Influence of Fano interference and incoherent processes on optical bistability in a four-level quantum dot nanostructure

NASA Astrophysics Data System (ADS)

Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

2016-03-01

Role of Fano interference and incoherent pumping field on optical bistability in a four-level designed InGaN/GaN quantum dot nanostructure embedded in a unidirectional ring cavity are analyzed. It is found that intensity threshold of optical bistability can be manipulated by Fano interference. It is shown that incoherent pumping fields make the threshold of optical bistability behave differently by Fano interference. Moreover, in the presence of Fano interference the medium becomes phase-dependent. Therefore, the relative phase of applied fields can affect the behaviors of optical bistability and intensity threshold can be controlled easily.

Characterization of the ETEL D784UKFLB 11 in. photomultiplier tube

NASA Astrophysics Data System (ADS)

Barros, N.; Kaptanoglu, T.; Kimelman, B.; Klein, J. R.; Moore, E.; Nguyen, J.; Stavreva, K.; Svoboda, R.

2017-04-01

Water Cherenkov and scintillator detectors are a critical tool for neutrino physics. Their large size, low threshold, and low operational cost make them excellent detectors for long baseline neutrino oscillations, proton decay, supernova and solar neutrinos, double beta decay, and ultra-high energy astrophysical neutrinos. Proposals for a new generation of large detectors rely on the availability of large format, fast, cost-effective photomultiplier tubes. The Electron Tubes Enterprises, Ltd (ETEL) D784KFLB 11 in. Photomultiplier Tube has been developed for large neutrino detectors. We have measured the timing characteristics, relative efficiency, and magnetic field sensitivity of the first fifteen prototypes.

Evaluation of Magnetoresistive RAM for Space Applications

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2014-01-01

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Molecular control of pentacene/ZnO photoinduced charge transfer

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Paoprasert, Peerasak; Franking, Ryan; Hamers, Robert J.; Gopalan, Padma; Evans, Paul G.

2011-03-01

Photoinduced charge transfer modifies the device properties of illuminated pentacene field effect transistors (FETs) incorporating ZnO quantum dots at the gate insulator/pentacene interface. The transferred charge is trapped on electronic states associated with the ZnO quantum dots, with a steady state population approximately proportional to the rate of organic-inorganic charge transfer. Trapped charge shifts the threshold voltage of the FETs, providing the means to evaluate the rate of organic/inorganic charge transfer and the effects of interface modification. Monolayers of the wide-gap alkane stearic acid and the conjugated oligomer terthiophene attached to the ZnO suppress or permit charge transfer, respectively.

Comparison of the Between the Flags calling criteria to the MEWS, NEWS and the electronic Cardiac Arrest Risk Triage (eCART) score for the identification of deteriorating ward patients.

PubMed

Green, Malcolm; Lander, Harvey; Snyder, Ashley; Hudson, Paul; Churpek, Matthew; Edelson, Dana

2018-02-01

Traditionally, paper based observation charts have been used to identify deteriorating patients, with emerging recent electronic medical records allowing electronic algorithms to risk stratify and help direct the response to deterioration. We sought to compare the Between the Flags (BTF) calling criteria to the Modified Early Warning Score (MEWS), National Early Warning Score (NEWS) and electronic Cardiac Arrest Risk Triage (eCART) score. Multicenter retrospective analysis of electronic health record data from all patients admitted to five US hospitals from November 2008-August 2013. Cardiac arrest, ICU transfer or death within 24h of a score RESULTS: Overall accuracy was highest for eCART, with an AUC of 0.801 (95% CI 0.799-0.802), followed by NEWS, MEWS and BTF respectively (0.718 [0.716-0.720]; 0.698 [0.696-0.700]; 0.663 [0.661-0.664]). BTF criteria had a high risk (Red Zone) specificity of 95.0% and a moderate risk (Yellow Zone) specificity of 27.5%, which corresponded to MEWS thresholds of >=4 and >=2, NEWS thresholds of >=5 and >=2, and eCART thresholds of >=12 and >=4, respectively. At those thresholds, eCART caught 22 more adverse events per 10,000 patients than BTF using the moderate risk criteria and 13 more using high risk criteria, while MEWS and NEWS identified the same or fewer. An electronically generated eCART score was more accurate than commonly used paper based observation tools for predicting the composite outcome of in-hospital cardiac arrest, ICU transfer and death within 24h of observation. The outcomes of this analysis lend weight for a move towards an algorithm based electronic risk identification tool for deteriorating patients to ensure earlier detection and prevent adverse events in the hospital. Copyright © 2017 Elsevier B.V. All rights reserved.

Thermal transport dynamics in the quasi-single helicity state

NASA Astrophysics Data System (ADS)

McKinney, I. J.; Terry, P. W.

2017-06-01

A dynamical model describing oscillations between multiple and single helicity configurations in the quasi-single helicity (QSH) state of the reversed field pinch [P. W. Terry and G. G. Whelan, Plasma Phys. Controlled Fusion 56, 094003 (2014)] is extended to include electron temperature profile dynamics. It is shown that QSH dynamics is linked to the electron temperature profile because the suppression of mode coupling between tearing modes proposed to underlie QSH also suppresses magnetic-fluctuation-induced thermal transport. Above the threshold of dominant-mode shear that marks the transition to QSH, the model produces temperature-gradient steepening in the strong shear region. Oscillations of the dominant and secondary mode amplitudes give rise to oscillations of the temperature gradient. The phasing and amplitude of temperature gradient oscillations relative to those of the dominant mode are in agreement with experiment. This provides further evidence that the model, while heuristic, captures key physical aspects of the QSH state.

Silver (Ag)-Graphene oxide (GO) - Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) nanostructured composites with high dielectric constant and low dielectric loss

NASA Astrophysics Data System (ADS)

Moharana, Srikanta; Mahaling, Ram Naresh

2017-07-01

The Silver (Ag)-Graphene oxide (GO)-Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) composites were prepared by solution casting techniques and their dielectric properties were measured. Field emission scanning electron microscopy (FESEM) and X-ray analysis (XRD) confirmed that Ag layers were formed on the surface of the Graphene oxide sheets and homogeneously dispersed into the PVDF-HFP matrix. The result showed that the incorporation of Ag-GO nanoparticles greatly improved the dielectric constant value nearly about 65 at 100 Hz, which is comparatively much higher than that of pure PVDF-HFP. Furthermore, the dielectric loss of the composite remained at a low level (<0.1 at 100 Hz). A percolation threshold of 1.5 vol% of Ag-GO was calculated and explained accordingly. The composite having high dielectric constant and low dielectric loss might be used as dielectric materials for electronic capacitors.

Negative charge emission due to excimer laser bombardment of sodium trisilicate glass

NASA Astrophysics Data System (ADS)

Langford, S. C.; Jensen, L. C.; Dickinson, J. T.; Pederson, L. R.

1990-10-01

We describe measurements of negative charge emission accompanying irradiation of sodium trisilicate glass (Na2Oṡ3SiO2) with 248-nm excimer laser light at fluences on the order of 2 J/cm2 per pulse, i.e., at the threshold for ablative etching of the glass surface. The negative charge emission consists of a very prompt photoelectron burst coincident with the laser pulse, followed by a much slower plume of electrons and negative ions traveling with a high density cloud of positive ions, previously identified as primarily Na+. Using combinations of E and B fields in conjunction with time-of-flight methods, the negative ions were successfully separated from the plume and tentatively identified as O-, Si-, NaO-, and perhaps NaSi-. These negative species are probably formed by gas phase collisions in the near-surface region which result in electron attachment.

Theoretical evaluation of two dimensional electron gas characteristics of quaternary AlxInyGa1-x-yN/GaN hetero-junctions

NASA Astrophysics Data System (ADS)

Rahbardar Mojaver, Hassan; Manouchehri, Farzin; Valizadeh, Pouya

2016-04-01

The two dimensional electron gas (2DEG) characteristics of gated metal-face wurtzite AlInGaN/GaN hetero-junctions including positions of subband energy levels, fermi energy level, and the 2DEG concentration as functions of physical and compositional properties of the hetero-junction (i.e., barrier thickness and metal mole-fractions) are theoretically evaluated using the variational method. The calculated values of the 2DEG concentration are in good agreement with the sparsely available experimental data reported in the literature. According to our simulation results, a considerable shift in the positive direction of threshold voltage of AlInGaN/GaN hetero-junction field-effect transistors can be achieved by engineering both the spontaneous and the piezoelectric polarizations using a quaternary AlInGaN barrier-layer of appropriate mole-fractions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tierno, S. P., E-mail: sp.tierno@upm.es; Donoso, J. M.; Domenech-Garret, J. L.

The interaction between an electron emissive wall, electrically biased in a plasma, is revisited through a simple fluid model. We search for realistic conditions of the existence of a non-monotonic plasma potential profile with a virtual cathode as it is observed in several experiments. We mainly focus our attention on thermionic emission related to the operation of emissive probes for plasma diagnostics, although most conclusions also apply to other electron emission processes. An extended Bohm criterion is derived involving the ratio between the two different electron densities at the potential minimum and at the background plasma. The model allows amore » phase-diagram analysis, which confirms the existence of the non-monotonic potential profiles with a virtual cathode. This analysis shows that the formation of the potential well critically depends on the emitted electron current and on the velocity at the sheath edge of cold ions flowing from the bulk plasma. As a consequence, a threshold value of the governing parameter is required, in accordance to the physical nature of the electron emission process. The latter is a threshold wall temperature in the case of thermionic electrons. Experimental evidence supports our numerical calculations of this threshold temperature. Besides this, the potential well becomes deeper with increasing electron emission, retaining a fraction of the released current which limits the extent of the bulk plasma perturbation. This noninvasive property would explain the reliable measurements of plasma potential by using the floating potential method of emissive probes operating in the so-called strong emission regime.« less

Modified cable equation incorporating transverse polarization of neuronal membranes for accurate coupling of electric fields.

PubMed

Wang, Boshuo; Aberra, Aman S; Grill, Warren M; Peterchev, Angel V

2018-04-01

We present a theory and computational methods to incorporate transverse polarization of neuronal membranes into the cable equation to account for the secondary electric field generated by the membrane in response to transverse electric fields. The effect of transverse polarization on nonlinear neuronal activation thresholds is quantified and discussed in the context of previous studies using linear membrane models. The response of neuronal membranes to applied electric fields is derived under two time scales and a unified solution of transverse polarization is given for spherical and cylindrical cell geometries. The solution is incorporated into the cable equation re-derived using an asymptotic model that separates the longitudinal and transverse dimensions. Two numerical methods are proposed to implement the modified cable equation. Several common neural stimulation scenarios are tested using two nonlinear membrane models to compare thresholds of the conventional and modified cable equations. The implementations of the modified cable equation incorporating transverse polarization are validated against previous results in the literature. The test cases show that transverse polarization has limited effect on activation thresholds. The transverse field only affects thresholds of unmyelinated axons for short pulses and in low-gradient field distributions, whereas myelinated axons are mostly unaffected. The modified cable equation captures the membrane's behavior on different time scales and models more accurately the coupling between electric fields and neurons. It addresses the limitations of the conventional cable equation and allows sound theoretical interpretations. The implementation provides simple methods that are compatible with current simulation approaches to study the effect of transverse polarization on nonlinear membranes. The minimal influence by transverse polarization on axonal activation thresholds for the nonlinear membrane models indicates that predictions of stronger effects in linear membrane models with a fixed activation threshold are inaccurate. Thus, the conventional cable equation works well for most neuroengineering applications, and the presented modeling approach is well suited to address the exceptions.

Properties of ion temperature gradient and trapped electron modes in tokamak plasmas with inverted density profiles

NASA Astrophysics Data System (ADS)

Du, Huarong; Jhang, Hogun; Hahm, T. S.; Dong, J. Q.; Wang, Z. X.

2017-12-01

We perform a numerical study of linear stability of the ion temperature gradient (ITG) mode and the trapped electron mode (TEM) in tokamak plasmas with inverted density profiles. A local gyrokinetic integral equation is applied for this study. From comprehensive parametric scans, we obtain stability diagrams for ITG modes and TEMs in terms of density and temperature gradient scale lengths. The results show that, for the inverted density profile, there exists a normalized threshold temperature gradient above which the ITG mode and the TEM are either separately or simultaneously unstable. The instability threshold of the TEM for the inverted density profile is substantially different from that for normal and flat density profiles. In addition, deviations are found on the ITG threshold from an early analytic theory in sheared slab geometry with the adiabatic electron response [T. S. Hahm and W. M. Tang, Phys. Fluids B 1, 1185 (1989)]. A possible implication of this work on particle transport in pellet fueled tokamak plasmas is discussed.

A simple method to estimate threshold friction velocity of wind erosion in the field

USDA-ARS?s Scientific Manuscript database

Nearly all wind erosion models require the specification of threshold friction velocity (TFV). Yet determining TFV of wind erosion in field conditions is difficult as it depends on both soil characteristics and distribution of vegetation or other roughness elements. While several reliable methods ha...

A practical and theoretical definition of very small field size for radiotherapy output factor measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charles, P. H., E-mail: p.charles@qut.edu.au; Crowe, S. B.; Langton, C. M.

Purpose: This work introduces the concept of very small field size. Output factor (OPF) measurements at these field sizes require extremely careful experimental methodology including the measurement of dosimetric field size at the same time as each OPF measurement. Two quantifiable scientific definitions of the threshold of very small field size are presented. Methods: A practical definition was established by quantifying the effect that a 1 mm error in field size or detector position had on OPFs and setting acceptable uncertainties on OPF at 1%. Alternatively, for a theoretical definition of very small field size, the OPFs were separated intomore » additional factors to investigate the specific effects of lateral electronic disequilibrium, photon scatter in the phantom, and source occlusion. The dominant effect was established and formed the basis of a theoretical definition of very small fields. Each factor was obtained using Monte Carlo simulations of a Varian iX linear accelerator for various square field sizes of side length from 4 to 100 mm, using a nominal photon energy of 6 MV. Results: According to the practical definition established in this project, field sizes ≤15 mm were considered to be very small for 6 MV beams for maximal field size uncertainties of 1 mm. If the acceptable uncertainty in the OPF was increased from 1.0% to 2.0%, or field size uncertainties are 0.5 mm, field sizes ≤12 mm were considered to be very small. Lateral electronic disequilibrium in the phantom was the dominant cause of change in OPF at very small field sizes. Thus the theoretical definition of very small field size coincided to the field size at which lateral electronic disequilibrium clearly caused a greater change in OPF than any other effects. This was found to occur at field sizes ≤12 mm. Source occlusion also caused a large change in OPF for field sizes ≤8 mm. Based on the results of this study, field sizes ≤12 mm were considered to be theoretically very small for 6 MV beams. Conclusions: Extremely careful experimental methodology including the measurement of dosimetric field size at the same time as output factor measurement for each field size setting and also very precise detector alignment is required at field sizes at least ≤12 mm and more conservatively≤15 mm for 6 MV beams. These recommendations should be applied in addition to all the usual considerations for small field dosimetry, including careful detector selection.« less

A practical and theoretical definition of very small field size for radiotherapy output factor measurements.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Crowe, S B; Kairn, T; Knight, R T; Kenny, J; Langton, C M; Trapp, J V

2014-04-01

This work introduces the concept of very small field size. Output factor (OPF) measurements at these field sizes require extremely careful experimental methodology including the measurement of dosimetric field size at the same time as each OPF measurement. Two quantifiable scientific definitions of the threshold of very small field size are presented. A practical definition was established by quantifying the effect that a 1 mm error in field size or detector position had on OPFs and setting acceptable uncertainties on OPF at 1%. Alternatively, for a theoretical definition of very small field size, the OPFs were separated into additional factors to investigate the specific effects of lateral electronic disequilibrium, photon scatter in the phantom, and source occlusion. The dominant effect was established and formed the basis of a theoretical definition of very small fields. Each factor was obtained using Monte Carlo simulations of a Varian iX linear accelerator for various square field sizes of side length from 4 to 100 mm, using a nominal photon energy of 6 MV. According to the practical definition established in this project, field sizes ≤ 15 mm were considered to be very small for 6 MV beams for maximal field size uncertainties of 1 mm. If the acceptable uncertainty in the OPF was increased from 1.0% to 2.0%, or field size uncertainties are 0.5 mm, field sizes ≤ 12 mm were considered to be very small. Lateral electronic disequilibrium in the phantom was the dominant cause of change in OPF at very small field sizes. Thus the theoretical definition of very small field size coincided to the field size at which lateral electronic disequilibrium clearly caused a greater change in OPF than any other effects. This was found to occur at field sizes ≤ 12 mm. Source occlusion also caused a large change in OPF for field sizes ≤ 8 mm. Based on the results of this study, field sizes ≤ 12 mm were considered to be theoretically very small for 6 MV beams. Extremely careful experimental methodology including the measurement of dosimetric field size at the same time as output factor measurement for each field size setting and also very precise detector alignment is required at field sizes at least ≤ 12 mm and more conservatively ≤ 15 mm for 6 MV beams. These recommendations should be applied in addition to all the usual considerations for small field dosimetry, including careful detector selection. © 2014 American Association of Physicists in Medicine.

First-principles simulation of the optical response of bulk and thin-film α-quartz irradiated with an ultrashort intense laser pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyung-Min; Min Kim, Chul; Moon Jeong, Tae, E-mail: jeongtm@gist.ac.kr

A computational method based on a first-principles multiscale simulation has been used for calculating the optical response and the ablation threshold of an optical material irradiated with an ultrashort intense laser pulse. The method employs Maxwell's equations to describe laser pulse propagation and time-dependent density functional theory to describe the generation of conduction band electrons in an optical medium. Optical properties, such as reflectance and absorption, were investigated for laser intensities in the range 10{sup 10} W/cm{sup 2} to 2 × 10{sup 15} W/cm{sup 2} based on the theory of generation and spatial distribution of the conduction band electrons. The method was applied tomore » investigate the changes in the optical reflectance of α-quartz bulk, half-wavelength thin-film, and quarter-wavelength thin-film and to estimate their ablation thresholds. Despite the adiabatic local density approximation used in calculating the exchange–correlation potential, the reflectance and the ablation threshold obtained from our method agree well with the previous theoretical and experimental results. The method can be applied to estimate the ablation thresholds for optical materials, in general. The ablation threshold data can be used to design ultra-broadband high-damage-threshold coating structures.« less

Modeling of ablation threshold dependence on pulse duration for dielectrics with ultrashort pulsed laser

NASA Astrophysics Data System (ADS)

Sun, Mingying; Zhu, Jianqiang; Lin, Zunqi

2017-01-01

We present a numerical model of plasma formation in ultrafast laser ablation on the dielectrics surface. Ablation threshold dependence on pulse duration is predicted with the model and the numerical results for water agrees well with the experimental data for pulse duration from 140 fs to 10 ps. Influences of parameters and approximations of photo- and avalanche-ionization on the ablation threshold prediction are analyzed in detail for various pulse lengths. The calculated ablation threshold is strongly dependent on electron collision time for all the pulse durations. The complete photoionization model is preferred for pulses shorter than 1 ps rather than the multiphoton ionization approximations. The transition time of inverse bremsstrahlung absorption needs to be considered when pulses are shorter than 5 ps and it can also ensure the avalanche ionization (AI) coefficient consistent with that in multiple rate equations (MREs) for pulses shorter than 300 fs. The threshold electron density for AI is only crucial for longer pulses. It is reasonable to ignore the recombination loss for pulses shorter than 100 fs. In addition to thermal transport and hydrodynamics, neglecting the threshold density for AI and recombination could also contribute to the disagreements between the numerical and the experimental results for longer pulses.

Line length dependence of threshold current density and driving force in eutectic SnPb and SnAgCu solder electromigration

NASA Astrophysics Data System (ADS)

Yoon, Min-Seung; Ko, Min-Ku; Kim, Bit-Na; Kim, Byung-Joon; Park, Yong-Bae; Joo, Young-Chang

2008-04-01

The relationship between the threshold current density and the critical line length in eutectic SnPb and SnAgCu electromigrations were examined using solder lines with the various lengths ranging from 100to1000μm. When the electron wind-force was balanced by the back-stress gradient force, the net flux of electromigration is zero, at which the current density and line length are defined as the threshold current density and the critical length, respectively. It was found that in SnAgCu electromigration, the 1/L dependence on the threshold current density showed good agreement, whereas the threshold current densities of the eutectic SnPb deviated from the 1/L dependence. The balance between the electron wind-force and the back-stress gradient force was the main factor determining the threshold product of SnAgCu electromigration. On the other hand, in the case of eutectic SnPb, the chemical driving force is contributed as a back-flux force in addition to the back-stress gradient force. The existence of the chemical driving force was caused by the nonequilibrium Pb concentration inside the Pb-rich phases between the cathode and anode during the electromigration procedure.

Effects of polarization and absorption on laser induced optical breakdown threshold for skin rejuvenation

NASA Astrophysics Data System (ADS)

Varghese, Babu; Bonito, Valentina; Turco, Simona; Verhagen, Rieko

2016-03-01

Laser induced optical breakdown (LIOB) is a non-linear absorption process leading to plasma formation at locations where the threshold irradiance for breakdown is surpassed. In this paper we experimentally demonstrate the influence of polarization and absorption on laser induced breakdown threshold in transparent, absorbing and scattering phantoms made from water suspensions of polystyrene microspheres. We demonstrate that radially polarized light yields a lower irradiance threshold for creating optical breakdown compared to linearly polarized light. We also demonstrate that the thermal initiation pathway used for generating seed electrons results in a lower irradiance threshold compared to multiphoton initiation pathway used for optical breakdown.

Bright and durable field-emission source derived from frozen refractory-metal Taylor cones

DOE PAGES

Hirsch, Gregory

2017-02-22

A novel method for creating conical field-emission structures possessing unusual and desirable physical characteristics is described. This process is accomplished by solidification of electrostatically formed high-temperature Taylor cones created on the ends of laser melted refractory-metal wires. Extremely rapid freezing ensures that the resultant solid structures preserve the shape and surface smoothness of the flawless liquid Taylor-cones to a very high degree. The method also enables in situ and rapid restoration of the frozen cones to their initial pristine state after undergoing physical degradation during use. This permits maximum current to be delivered without excessive concern for any associated reductionmore » in field-emitter lifetime resulting from operation near or even above the damage threshold. In addition to the production of field emitters using polycrystalline wires as a substrate, the feasibility of producing monocrystalline frozen Taylor-cones having reproducible crystal orientation by growth on single-crystal wires was demonstrated. Finally, the development of the basic field-emission technology, progress to incorporate it into a pulsed electron gun employing laser-assisted field emission for ultrafast experiments, and some additional advances and opportunities are discussed.« less

Effect of ECRH and resonant magnetic fields on formation of magnetic islands in the T-10 tokamak plasma

NASA Astrophysics Data System (ADS)

Shestakov, E. A.; Savrukhin, P. V.

2017-10-01

Experiments in the T-10 tokamak demonstrated possibility of controlling the plasma current during disruption instability using the electron cyclotron resonance heating (ECRH) and the controlled operation of the ohmic current-holding system. Quasistable plasma discharge with repeating sawtooth oscillations can be restored after energy quench using auxiliary ECRH power when PEC / POH > 2-5. The external magnetic field generation system consisted of eight saddle coils that were arranged symmetrically relative to the equatorial plane of the torus outside of the vacuum vessel of the T-10 tokamak to study the possible resonant magnetic field effects on the rotation frequency of magnetic islands. The saddle coils power supply system is based on four thyristor converters with a total power of 300 kW. The power supply control system is based on Siemens S7 controllers. As shown by preliminary experiments, the interaction efficiency of external magnetic fields with plasma depends on the plasma magnetic configuration. Optimal conditions for slowing the rotation of magnetic islands were determined. Additionally, the direction of the error magnetic field in the T-10 tokamak was determined, and the threshold value of the external magnetic field was determined.

Bright and durable field-emission source derived from frozen refractory-metal Taylor cones

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirsch, Gregory

A novel method for creating conical field-emission structures possessing unusual and desirable physical characteristics is described. This process is accomplished by solidification of electrostatically formed high-temperature Taylor cones created on the ends of laser melted refractory-metal wires. Extremely rapid freezing ensures that the resultant solid structures preserve the shape and surface smoothness of the flawless liquid Taylor-cones to a very high degree. The method also enables in situ and rapid restoration of the frozen cones to their initial pristine state after undergoing physical degradation during use. This permits maximum current to be delivered without excessive concern for any associated reductionmore » in field-emitter lifetime resulting from operation near or even above the damage threshold. In addition to the production of field emitters using polycrystalline wires as a substrate, the feasibility of producing monocrystalline frozen Taylor-cones having reproducible crystal orientation by growth on single-crystal wires was demonstrated. Finally, the development of the basic field-emission technology, progress to incorporate it into a pulsed electron gun employing laser-assisted field emission for ultrafast experiments, and some additional advances and opportunities are discussed.« less

Negative Difference Resistance and Its Application to Construct Boolean Logic Circuits

NASA Astrophysics Data System (ADS)

Nikodem, Maciej; Bawiec, Marek A.; Surmacz, Tomasz R.

Electronic circuits based on nanodevices and quantum effect are the future of logic circuits design. Today's technology allows constructing resonant tunneling diodes, quantum cellular automata and nanowires/nanoribbons that are the elementary components of threshold gates. However, synthesizing a threshold circuit for an arbitrary logic function is still a challenging task where no efficient algorithms exist. This paper focuses on Generalised Threshold Gates (GTG), giving the overview of threshold circuit synthesis methods and presenting an algorithm that considerably simplifies the task in case of GTG circuits.

Manipulating Traveling Brain Waves with Electric Fields: From Theory to Experiment.

NASA Astrophysics Data System (ADS)

Gluckman, Bruce J.

2004-03-01

Activity waves in disinhibited neocortical slices have been used as a biological model for epileptic seizure propagation [1]. Such waves have been mathematically modeled with integro-differential equations [2] representing non-local reaction diffusion dynamics of an excitable medium with an excitability threshold. Stability and propagation speed of traveling pulse solutions depend strongly on the threshold in the following manner: propagation speed should decrease with increased threshold over a finite range, beyond which the waves become unstable. Because populations of neurons can be polarized with an applied electric field that effectively shifts their threshold for action potential initiation [3], we predicted, and have experimentally verified, that electric fields could be used globally or locally to speed up, slow down and even block wave propagation. [1] Telfeian and Conners, Epilepsia, 40, 1499-1506, 1999. [2] Pinto and Ermentrout, SIAM J. App. Math, 62, 206-225, 2001. [3] Gluckman, et. al. J Neurophysiol. 76, 4202-5, 1996.

Rational modulation of neuronal processing with applied electric fields.

PubMed

Bikson, Marom; Radman, Thomas; Datta, Abhishek

2006-01-01

Traditional approaches to electrical stimulation, using trains of supra-threshold pulses to trigger action potentials, may be replaced or augmented by using 'rational' sub-threshold stimulation protocols that incorporate knowledge of single neuron geometry, inhomogeneous tissue properties, and nervous system information coding. Sub-threshold stimulation, at intensities (well) below those sufficient to trigger action potentials, may none-the-less exert a profound effect on brain function through modulation of concomitant neuronal activity. For example, small DC fields may coherently polarize a network of neurons and thus modulate the simultaneous processing of afferent synaptic input as well as resulting changes in synaptic plasticity. Through 'activity-dependent plasticity', sub-threshold fields may allow specific targeting of pathological networks and are thus particularly suitable to overcome the poor anatomical focus of noninvasive (transcranial) electrical stimulation. Additional approaches to improve targeting in transcranial stimulation using novel electrode configurations are also introduced.

Effects of Spatial Attention on Motion Discrimination are Greater in the Left than Right Visual Field

PubMed Central

Bosworth, Rain G.; Petrich, Jennifer A.; Dobkins, Karen R.

2012-01-01

In order to investigate differences in the effects of spatial attention between the left visual field (LVF) and the right visual field (RVF), we employed a full/poor attention paradigm using stimuli presented in the LVF vs. RVF. In addition, to investigate differences in the effects of spatial attention between the Dorsal and Ventral processing streams, we obtained motion thresholds (motion coherence thresholds and fine direction discrimination thresholds) and orientation thresholds, respectively. The results of this study showed negligible effects of attention on the orientation task, in either the LVF or RVF. In contrast, for both motion tasks, there was a significant effect of attention in the LVF, but not in the RVF. These data provide psychophysical evidence for greater effects of spatial attention in the LVF/right hemisphere, specifically, for motion processing in the Dorsal stream. PMID:22051893

Dissociative excitation of the N(+)(5S) state by electron impact on N2 - Excitation function and quenching

NASA Technical Reports Server (NTRS)

Erdman, P. W.; Zipf, E. C.

1986-01-01

Metastable N(+)(5S) ions were produced in the laboratory by dissociative excitation of N2 with energetic electrons. The resulting radiative decay of the N(+)(5S) state was observed with sufficient resolution to completely resolve the doublet from the nearby N2 molecular radiation. The excitation function was measured from threshold to 500 eV. The cross section peaks at a high electron energy and also exhibits a high threshold energy both of which are typical of dissociative excitation-ionization processes. This finding complicates the explanation of electron impact on N2 as the mechanism for the source of the 2145 A 'auroral mystery feature' by further increasing the required peak cross section. It is suggested that the apparent N(+)(5S) quenching in auroras may be an artifact due to the softening of the electron energy spectrum in the auroral E region.

Modeling of a new electron-streamer acceleration mechanism

NASA Astrophysics Data System (ADS)

Ihaddadene, K. M. A.; Dwyer, J. R.; Liu, N.; Celestin, S. J.

2017-12-01

Lightning stepped leaders and laboratory spark discharges in air are known to produce X-rays [e.g., Dwyer et al., Geophys. Res. lett., 32, L20809, 2005; Kochkin et al., J. Phys. D: Appl. Phys., 45, 425202, 2012]. However, the processes behind the production of these X-rays are still not very well understood. During discharges, encounters between streamers of different polarities are very common. For example, during the formation of a new leader step, the negative streamer zone around the tip of a negative leader and the positive streamers initiated from the posiive part of a bidirectional space leader strongly interact. In laboratory experiments, when streamers are approaching a sharp electrode, streamers with the opposite polarity are initiated from the electrode and collide with the former streamers. Recently, the encounter between negative and positive streamers has been proposed as a plausible mechanism for the production of X-rays by spark discharges [Cooray et la., JASTP, 71, 1890, 2009; Kochkin et al., J. Phys. D: Appl. Phys., 45, 425202, 2012], but modeling results have shown later that the increase of the electric field involved in this process, which is above the conventional breakdown threshold field, is accompanied by a strong increase of the electron density. The resulting increase in the conductivity, in turn, causes this electric field to collapse over a few tens of picoseconds, preventing the electrons reaching high energies and producing significant X-ray emissions [e.g., Ihaddadene and Celestin, Geophys. Res. Lett., 45, 5644, 2015]. In this work, we will present simulation results of a new electron acceleration mechanism for producing runaway electron energies above hundred keV. The mechanism couples multiple single streamers and streamer head-on collisions, similar to a laboratory discharge, and is suitable for explaining the high-energy X-rays produced by discharges in air and by lightning stepped leaders.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Effects of GABAA receptor inhibition on response properties of barrel cortical neurons in C-fiber-depleted rats.

PubMed

Farazifard, Rasoul; Kiani, Roozbeh; Esteky, Hossein

2005-07-19

C-fiber depletion results in expansion of low threshold somatosensory mechanoreceptive fields. In this study, we investigated the role of intact C-fibers in GABAA-mediated inhibition in barrel cortical neurons. We used electronically controlled mechanical stimulation of whiskers to quantitatively examine the responses of barrel cells to whisker displacements. After systemic injection of picrotoxin neuronal responses were recorded at 5 min intervals for 20 min and then at 10 min intervals for 100 min. Picrotoxin injection caused a 3-fold increase in response magnitude of adjacent whisker stimulation and 1.4-fold increase in response magnitude of principal whisker stimulation with a maximum enhancement 50 min after the injection. There was no significant change in spontaneous activity following picrotoxin injection. The response enhancement and receptive field expansion observed in normal rats were completely absent in the C-fiber-depleted rats. These results suggest that the GABAA-mediated inhibition that modulates the receptive field functional organization of the barrel cortex depends on intact C-fibers.

Non-resonant multipactor-A statistical model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rasch, J.; Johansson, J. F.

2012-12-15

High power microwave systems operating in vacuum or near vacuum run the risk of multipactor breakdown. In order to avoid multipactor, it is necessary to make theoretical predictions of critical parameter combinations. These treatments are generally based on the assumption of electrons moving in resonance with the electric field while traversing the gap between critical surfaces. Through comparison with experiments, it has been found that only for small system dimensions will the resonant approach give correct predictions. Apparently, the resonance is destroyed due to the statistical spread in electron emission velocity, and for a more valid description it is necessarymore » to resort to rather complicated statistical treatments of the electron population, and extensive simulations. However, in the limit where resonance is completely destroyed it is possible to use a much simpler treatment, here called non-resonant theory. In this paper, we develop the formalism for this theory, use it to calculate universal curves for the existence of multipactor, and compare with previous results. Two important effects that leads to an increase in the multipactor threshold in comparison with the resonant prediction are identified. These are the statistical spread of impact speed, which leads to a lower average electron impact speed, and the impact of electrons in phase regions where the secondary electrons are immediately reabsorbed, leading to an effective removal of electrons from the discharge.« less

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

Electron Heating in Low Mach Number Perpendicular Shocks. II. Dependence on the Pre-shock Conditions

NASA Astrophysics Data System (ADS)

Guo, Xinyi; Sironi, Lorenzo; Narayan, Ramesh

2018-05-01

Recent X-ray observations of merger shocks in galaxy clusters have shown that the post-shock plasma is two-temperature, with the protons being hotter than the electrons. In this work, the second of a series, we investigate the efficiency of irreversible electron heating in perpendicular low Mach number shocks, by means of two-dimensional particle-in-cell simulations. We consider values of plasma beta (the ratio of thermal and magnetic pressures) in the range 4 ≲ β p0 ≲ 32, and sonic Mach number (the ratio of shock speed to pre-shock sound speed) in the range 2 ≲ M s ≲ 5, as appropriate for galaxy cluster shocks. As shown in Paper I, magnetic field amplification—induced by shock compression of the pre-shock field, or by strong proton cyclotron and mirror modes accompanying the relaxation of proton temperature anisotropy—can drive the electron temperature anisotropy beyond the threshold of the electron whistler instability. The growth of whistler waves breaks the electron adiabatic invariance, and allows for efficient entropy production. We find that the post-shock electron temperature T e2 exceeds the adiabatic expectation {T}e2,{ad} by an amount ({T}e2-{T}e2,{ad})/{T}e0≃ 0.044 {M}s({M}s-1) (here, T e0 is the pre-shock temperature), which depends only weakly on the plasma beta over the range 4 ≲ β p0 ≲ 32 that we have explored, as well as on the proton-to-electron mass ratio (the coefficient of ≃0.044 is measured for our fiducial {m}i/{m}e=49, and we estimate that it will decrease to ≃0.03 for the realistic mass ratio). Our results have important implications for current and future observations of galaxy cluster shocks in the radio band (synchrotron emission and Sunyaev–Zel’dovich effect) and at X-ray frequencies.

Optical potential approach to the electron-atom impact ionization threshold problem

NASA Technical Reports Server (NTRS)

Temkin, A.; Hahn, Y.

1973-01-01

The problem of the threshold law for electron-atom impact ionization is reconsidered as an extrapolation of inelastic cross sections through the ionization threshold. The cross sections are evaluated from a distorted wave matrix element, the final state of which describes the scattering from the Nth excited state of the target atom. The actual calculation is carried for the e-H system, and a model is introduced which is shown to preserve the essential properties of the problem while at the same time reducing the dimensionability of the Schrodinger equation. Nevertheless, the scattering equation is still very complex. It is dominated by the optical potential which is expanded in terms of eigen-spectrum of QHQ. It is shown by actual calculation that the lower eigenvalues of this spectrum descend below the relevant inelastic thresholds; it follows rigorously that the optical potential contains repulsive terms. Analytical solutions of the final state wave function are obtained with several approximations of the optical potential.

Topological properties of microwave magnetoelectric fields.

PubMed

Berezin, M; Kamenetskii, E O; Shavit, R

2014-02-01

Collective excitations of electron spins in a ferromagnetic sample dominated by the magnetic dipole-dipole interaction strongly influence the field structure of microwave radiation. A small quasi-two-dimensional ferrite disk with magnetic-dipolar-mode (MDM) oscillation spectra can behave as a source of specific fields in vacuum, termed magnetoelectric (ME) fields. A coupling between the time-varying electric and magnetic fields in the ME-field structures is different from such a coupling in regular electromagnetic fields. The ME fields are characterized by strong energy confinement at a subwavelength region of microwave radiation, topologically distinctive power-flow vortices, and helicity parameters [E. O. Kamenetskii, R. Joffe, and R. Shavit, Phys. Rev. E 87, 023201 (2013)]. We study topological properties of microwave ME fields by loading a MDM ferrite particle with different dielectric samples. We establish a close connection between the permittivity parameters of dielectric environment and the topology of ME fields. We show that the topology of ME fields is strongly correlated with the Fano-resonance spectra observed at terminals of a microwave structure. We reveal specific thresholds in the Fano-resonance spectra appearing at certain permittivity parameters of dielectric samples. We show that ME fields originated from MDM ferrite disks can be distinguished by topological portraits of the helicity parameters and can have a torsion degree of freedom. Importantly, the ME-field phenomena can be viewed as implementations of space-time coordinate transformations on waves.

Excitation of H+2 with one-cycle laser pulses: shaped post-laser-field electronic oscillations, generation of higher- and lower-order harmonics

NASA Astrophysics Data System (ADS)

Paramonov, Guennaddi K.; Kühn, Oliver; Bandrauk, André D.

2017-08-01

Non-Born-Oppenheimer quantum dynamics of H+2 excited by shaped one-cycle laser pulses linearly polarised along the molecular axis have been studied by the numerical solution of the time-dependent Schrödinger equation within a three-dimensional model, including the internuclear separation, R, and the electron coordinates z and ρ. Laser carrier frequencies corresponding to the wavelengths λl = 25 nm through λl = 400 nm were used and the amplitudes of the pulses were chosen such that the energy of H+2 was close to its dissociation threshold at the end of any laser pulse applied. It is shown that there exists a characteristic oscillation frequency ωosc ≃ 0.2265 au (corresponding to the period of τosc ≃ 0.671 fs and the wavelength of λosc ≃ 201 nm) that manifests itself as a 'carrier' frequency of temporally shaped oscillations of the time-dependent expectation values ⟨z ⟩ and ⟨∂V/∂z ⟩ that emerge at the ends of the laser pulses and exist on a timescale of at least 50 fs. Time-dependent expectation values ⟨ρ⟩ and ⟨∂V /∂ρ⟩ of the optically passive degree of freedom, ρ, demonstrate post-laser-field oscillations at two basic frequencies ωρ1 ≈ ωosc and ωρ2 ≈ 2ωosc. Power spectra associated with the electronic motion show higher- and lower-order harmonics with respect to the driving field.

Multi-field plasma sandpile model in tokamaks and applications

NASA Astrophysics Data System (ADS)

Peng, X. D.; Xu, J. Q.

2016-08-01

A multi-field sandpile model of tokamak plasmas is formulated for the first time to simulate the dynamic process with interaction between avalanche events on the fast/micro time-scale and diffusive transports on the slow/macro time-scale. The main characteristics of the model are that both particle and energy avalanches of sand grains are taken into account simultaneously. New redistribution rules of a sand-relaxing process are defined according to the transport properties of special turbulence which allows the uphill particle transport. Applying the model, we first simulate the steady-state plasma profile self-sustained by drift wave turbulences in the Ohmic discharge of a tokamak. A scaling law as f = a q0 b + c for the relation of both center-density n ( 0 ) and electron (ion) temperatures T e ( 0 ) ( T i ( 0 ) ) with the center-safety-factor q 0 is found. Then interesting work about the nonlocal transport phenomenon observed in tokamak experiments proceeds. It is found that the core electron temperature increases rapidly in response to the edge cold pulse and inversely it decreases in response to the edge heat pulse. The results show that the nonlocal response of core electron temperature depending on the amplitudes of background plasma density and temperature is more remarkable in a range of gas injection rate. Analyses indicate that the avalanche transport caused by plasma drift instabilities with thresholds is a possible physical mechanism for the nonlocal transport in tokamaks. It is believed that the model is capable of being applied to more extensive questions occurring in the transport field.

Mitigation of hot electrons from laser-plasma instabilities in high-Z, highly ionized plasmas

NASA Astrophysics Data System (ADS)

Fein, J. R.; Holloway, J. P.; Trantham, M. R.; Keiter, P. A.; Edgell, D. H.; Froula, D. H.; Haberberger, D.; Frank, Y.; Fraenkel, M.; Raicher, E.; Shvarts, D.; Drake, R. P.

2017-03-01

Hard x-ray measurements are used to infer production of hot electrons in laser-irradiated planar foils of materials ranging from low- to high-Z. The fraction of laser energy converted to hot electrons, fhot , was reduced by a factor of 103 going from low-Z CH to high-Z Au, and hot electron temperatures were reduced from 40 to ˜20 keV. The reduction in fhot correlates with steepening electron density gradient length-scales inferred from plasma refraction measurements. Radiation hydrodynamic simulations predicted electron density profiles in reasonable agreement with those from measurements. Both multi-beam two-plasmon decay (TPD) and multi-beam stimulated Raman scattering (SRS) were predicted to be above threshold with linear threshold parameters that decreased with increasing Z due to steepening length-scales, as well as enhanced laser absorption and increased electron plasma wave collisional and Landau damping. The results add to the evidence that SRS may play a comparable or a greater role relative to TPD in generating hot electrons in multi-beam experiments.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

NASA Astrophysics Data System (ADS)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

Angular-momentum-assisted dissociation of CO in strong optical fields

NASA Astrophysics Data System (ADS)

Mullin, Amy; Ogden, Hannah; Murray, Matthew; Liu, Qingnan; Toro, Carlos

2017-04-01

Filaments are produced in CO gas by intense, chirped laser pulses. Visible emission from C2 is observed as a result of chemical reactions of highly excited CO. At laser intensities greater than 1014 W cm-2, the C2 emission shows a strong dependence on laser polarization. Oppositely chirped pulses of light with ω0 = 800 nm are recombined spatially and temporally to generate angularly accelerating electric fields (up to 30 THz) that either have an instantaneous linear polarization or act as a dynamic polarization grating that oscillates among linear and circular polarizations. The angularly accelerating linear polarization corresponds to an optical centrifuge that concurrently drives molecules into high rotational states (with J 50) and induces strong-field dissociation. Higher order excitation is observed for the time-varying laser polarization configuration that does not induce rotational excitation. The results indicate that the presence of rotational angular momentum lowers the threshold for CO dissociation in strong optical fields by coupling nuclear and electronic degrees of freedom. Support from NSF CHE-1058721 and the University of Maryland.

Dissociative recombination of O2(+), NO(+) and N2(+)

NASA Technical Reports Server (NTRS)

Guberman, S. L.

1983-01-01

A new L(2) approach for the calculation of the threshold molecular capture width needed for the determination of DR cross sections was developed. The widths are calculated with Fermi's golden rule by substituting Rydberg orbitals for the free electron continuum coulomb orbital. It is shown that the calculated width converges exponentially as the effective principal quantum number of the Rydberg orbital increases. The threshold capture width is then easily obtained. Since atmospheric recombination involves very low energy electrons, the threshold capture widths are essential to the calculation of DR cross sections for the atmospheric species studied here. The approach described makes use of bound state computer codes already in use. A program that collects width matrix elements over CI wavefunctions for the initial and final states is described.

Effect of UV/ozone treatment on polystyrene dielectric and its application on organic field-effect transistors

PubMed Central

2014-01-01

The influence of UV/ozone treatment on the property of polystyrene (PS) dielectric surface was investigated, and pentacene organic field-effect transistors (OFETs) based on the treated dielectric was fabricated. The dielectric and pentacene active layers were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. The results showed that, at short UVO exposure time (<10 s), the chemical composition of PS dielectric surface remained the same. While at long UVO exposure time (>60 s), new chemical groups, including alcohol/ether, carbonyl, and carboxyl/ester groups, were formed. By adjusting the UVO exposure time to 5 s, the hole mobility of the OFETs increased to 0.52 cm2/Vs, and the threshold voltage was positively shifted to -12 V. While the time of UVO treatment exceeded 30 s, the mobility started to shrink, and the off-current was enlarged. These results indicate that, as a simple surface treatment method, UVO treatment could quantitatively modulate the property of PS dielectric surface by controlling the exposure time, and thus, pioneered a new way to modulate the characteristics of organic electronic devices. PMID:25258603

Deviations from Born-Oppenheimer mass scaling in spectroscopy and ultracold molecular physics

NASA Astrophysics Data System (ADS)

Lutz, Jesse J.; Hutson, Jeremy M.

2016-12-01

We investigate Born-Oppenheimer breakdown (BOB) effects (beyond the usual mass scaling) for the electronic ground states of a series of homonuclear and heteronuclear alkali-metal diatoms, together with the Sr2 and Yb2 diatomics. Several widely available electronic structure software packages are used to calculate the leading contributions to the total isotope shift for commonly occurring isotopologs of each species. Computed quantities include diagonal Born-Oppenheimer corrections (mass shifts) and isotopic field shifts. Mass shifts dominate for light nuclei up to and including K, but field shifts contribute significantly for Rb and Sr and are dominant for Yb. We compare the ab initio mass-shift functions for Li2, LiK and LiRb with spectroscopically derived ground-state BOB functions from the literature. We find good agreement in the values of the functions for LiK and LiRb at their equilibrium geometries, but significant disagreement with the shapes of the functions for all 3 systems. The differences may be due to contributions of nonadiabatic terms to the empirical BOB functions. We present a semiclassical model for the effect of BOB corrections on the binding energies of near-threshold states and the positions of zero-energy Feshbach resonances.

Field emission investigations of single crystal LaB6 FEA fabricated by femtosecond laser direct writing

NASA Astrophysics Data System (ADS)

Liu, Hongliang; Zhang, Xin; Li, Yuancheng; Xiao, Yixin; Zhang, Wei; Zhang, Jiu-Xing

2018-04-01

The femtosecond laser direct writing method has been used to fabricate the single crystal lanthanum hexaboride (LaB6) field-emission tip arrays (FEAs). The morphologies, structure phase, and field emission of the single crystal LaB6 FEAs are systematically studied. The nanostructures on the surface of tips with the LaB6 phase were formed, resulting in favor of improving field emission, particularly for samples with the nanohill shaped bulges having the size of about 100 nm. The produced single crystal LaB6 FEAs have a uniform structure and a controllable curvature radius of about 0.5-3.0 μm. The FEAs with a curvature radius of about 0.5 μm as field emitters have the best field emission performance, which the field emission turns on and the threshold electric fields are as low as 2.2 and 3.8 V/μm with an emission current of 1.0 A/cm2 at 8.0 V/μm, and the emission current exhibits high stability. These indicate that the processed LaB6 FEAs have a good prospect applied in vacuum microelectronic devices and the simple femtosecond laser direct writing method could lead to an approach for the development of electron sources.

Continuum percolation of polydisperse rods in quadrupole fields: Theory and simulations.

PubMed

Finner, Shari P; Kotsev, Mihail I; Miller, Mark A; van der Schoot, Paul

2018-01-21

We investigate percolation in mixtures of nanorods in the presence of external fields that align or disalign the particles with the field axis. Such conditions are found in the formulation and processing of nanocomposites, where the field may be electric, magnetic, or due to elongational flow. Our focus is on the effect of length polydispersity, which-in the absence of a field-is known to produce a percolation threshold that scales with the inverse weight average of the particle length. Using a model of non-interacting spherocylinders in conjunction with connectedness percolation theory, we show that a quadrupolar field always increases the percolation threshold and that the universal scaling with the inverse weight average no longer holds if the field couples to the particle length. Instead, the percolation threshold becomes a function of higher moments of the length distribution, where the order of the relevant moments crucially depends on the strength and type of field applied. The theoretical predictions compare well with the results of our Monte Carlo simulations, which eliminate finite size effects by exploiting the fact that the universal scaling of the wrapping probability function holds even in anisotropic systems. Theory and simulation demonstrate that the percolation threshold of a polydisperse mixture can be lower than that of the individual components, confirming recent work based on a mapping onto a Bethe lattice as well as earlier computer simulations involving dipole fields. Our work shows how the formulation of nanocomposites may be used to compensate for the adverse effects of aligning fields that are inevitable under practical manufacturing conditions.

Below-threshold harmonic generation from strong non-uniform fields

NASA Astrophysics Data System (ADS)

Yavuz, I.

2017-10-01

Strong-field photoemission below the ionization threshold is a rich/complex region where atomic emission and harmonic generation may coexist. We studied the mechanism of below-threshold harmonics (BTH) from spatially non-uniform local fields near the metallic nanostructures. Discrete harmonics are generated due to the broken inversion symmetry, suggesting enriched coherent emission in the vuv frequency range. Through the numerical solution of the time-dependent Schrödinger equation, we investigate wavelength and intensity dependence of BTH. Wavelength dependence identifies counter-regular resonances; individual contributions from the multi-photon emission and channel-closing effects due to quantum path interferences. In order to understand the underlying mechanism of BTH, we devised a generalized semi-classical model, including the influence of Coulomb and non-uniform field interactions. As in uniform fields, Coulomb potential in non-uniform fields is the determinant of BTH; we observed that the generation of BTH are due to returning trajectories with negative energies. Due to large distance effectiveness of the non-uniformity, only long trajectories are noticeably affected.

Applying Threshold Concepts Theory to an Unsettled Field: An Exploratory Study in Criminal Justice Education

ERIC Educational Resources Information Center

Wimshurst, Kerry

2011-01-01

Criminal justice education is a relatively new program in higher education in many countries, and its curriculum and parameters remain unsettled. An exploratory study investigated whether threshold concepts theory provided a useful lens by which to explore student understandings of this multidisciplinary field. Eight high-performing final-year…

A ratiometric threshold for determining presence of cancer during fluorescence-guided surgery.

PubMed

Warram, Jason M; de Boer, Esther; Moore, Lindsay S; Schmalbach, Cecelia E; Withrow, Kirk P; Carroll, William R; Richman, Joshua S; Morlandt, Anthony B; Brandwein-Gensler, Margaret; Rosenthal, Eben L

2015-07-01

Fluorescence-guided imaging to assist in identification of malignant margins has the potential to dramatically improve oncologic surgery. However, a standardized method for quantitative assessment of disease-specific fluorescence has not been investigated. Introduced here is a ratiometric threshold derived from mean fluorescent tissue intensity that can be used to semi-quantitatively delineate tumor from normal tissue. Open-field and a closed-field imaging devices were used to quantify fluorescence in punch biopsy tissues sampled from primary tumors collected during a phase 1 trial evaluating the safety of cetuximab-IRDye800 in patients (n = 11) undergoing surgical intervention for head and neck cancer. Fluorescence ratios were calculated using mean fluorescence intensity (MFI) from punch biopsy normalized by MFI of patient-matched tissues. Ratios were compared to pathological assessment and a ratiometric threshold was established to predict presence of cancer. During open-field imaging using an intraoperative device, the threshold for muscle normalized tumor fluorescence was found to be 2.7, which produced a sensitivity of 90.5% and specificity of 78.6% for delineating disease tissue. The skin-normalized threshold generated greater sensitivity (92.9%) and specificity (81.0%). Successful implementation of a semi-quantitative threshold can provide a scientific methodology for delineating disease from normal tissue during fluorescence-guided resection of cancer. © 2015 Wiley Periodicals, Inc.

Absolute Measurements of Field Enhanced Dielectronic Recombination and Electron Impact Excitation

NASA Astrophysics Data System (ADS)

Savin, Daniel Wolf

Absolute measurements have been made of the dielectronic recombination (DR) rate coefficient for C^ {3+}, via the 2s-2p core -excitation, in an external electric field of 11.4 +/- 0.9(1sigma) V cm ^{-1}; and of the electron impact excitation (EIE) rate coefficient for C ^{3+}(2s-2p) at energies near threshold. The ion-rest-frame FWHM of the electron energy spread was 1.74 +/- 0.22(1sigma) eV. The measured DR rate, at a mean electron energy of 8.26 +/- 0.07(1sigma ) eV, was (2.76+/- 0.75)times 10^{-10} cm^{3 } s^{-1}. The uncertainty quoted for the DR rate is the total experimental uncertainty at a 1sigma<=vel. The present DR result appears to agree with an intermediate coupling calculation which uses the isolated-resonance, single-configuration approximation. In comparing with theory, a semi-classical formula was used to determine which recombined ions were field-ionized by the 4.65 kV cm^{-1} fields in the final-charge-state analyzer and not detected. A more precise treatment of field-ionization, which includes the lifetime of the high Rydberg C^{2+} ions in the external field and the time evolution and rotation of the fields experienced by the recombined ions, is needed before a definitive comparison between experiment and theory can be made. For the EIE results, at an ion-rest-frame energy of 10.10 eV, the measured rate coefficient was (7.79+/- 2.10)times 10^{ -8} cm^3 s^ {-1}. The measured cross section was (4.15+/- 1.12)times 10^{ -16} cm^2. The uncertainties quoted here represent the total experimental uncertainty at a 90 percent confidence level. Good agreement is found with other measurements. Agreement is not good with Coulomb -Born with exchange and two-state close-coupling calculations which fall outside the 90-percent-confidence uncertainty limits. Agreement is better with a nine-state close-coupling calculation which lies at the extreme of the uncertainty limits. Taking into account previous measurements in C ^{3+} and also a measurement of EIE in Be^+ which lies 19 percent below close-coupling calculations, there is a suggestion that the C^{3+}(2s-2p) EIE rate coefficient may fall slightly below presently accepted values.

Modeling Plasma Formation in a Micro-gap at Microwave Frequency

NASA Astrophysics Data System (ADS)

Bowman, Arthur; Remillard, Stephen

2013-03-01

In the presence of a strong electric field, gas molecules become ionized, forming a plasma. The study of this dielectric breakdown at microwave frequency has important applications in improving the operation of radio frequency (RF) devices, where the high electric fields present in small gaps can easily ionize gases like air. A cone and tuner resonant structure was used to induce breakdown of diatomic Nitrogen in adjustable micro-gaps ranging from 13 to 1,156 μm. The electric field for plasma formation exhibited strong pressure dependence in the larger gap sizes, as predicted by previous theoretical and experimental work. Pressure is proportional to the frequency of collision between electrons and molecules, which increases with pressure when the gap is large, but levels off in the micro-gap region. A separate model of the breakdown electric field based on the characteristic diffusion length of the plasma also fit the data poorly for these smaller gap sizes. This may be explained by a hypothesis that dielectric breakdown at and below the 100 μm gap size occurs outside the gap, an argument that is supported by the observation of very high breakdown threshold electric fields in this region. Optical emissions revealed that vibrational and rotational molecular transitions of the first positive electronic system are suppressed in micro-gaps, indicating that transitions into the molecular ground state do not occur in micro-gap plasmas. Acknowledgements: National Science Foundation under NSF-REU Grant No. PHY/DMR-1004811, the Provost's Office of Hope College, and the Hope College Division of Natural and Applied Sciences.