Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

NASA Astrophysics Data System (ADS)

Kishida, Ryo; Furuta, Jun; Kobayashi, Kazutoshi

2018-04-01

Plasma-induced damage (PID) and bias temperature instability (BTI) are inevitable reliability issues that degrade the performance of transistors. In this study, PID and BTI, depending on the type of antenna layer, are evaluated in current-starved ring oscillators (ROs) to separate degradations in PMOS and NMOS transistors in a 65 nm silicon-on-insulator (SOI) process. Oscillation frequencies of ROs fluctuate with the performance of MOSFET switches between power/ground rails and virtual power/ground nodes. The initial frequencies of ROs with PMOS switches having antennas on upper layers decrease. However, those with NMOS switches become higher than those without PID because high-k dielectrics are damaged by positive charges. The degradation induced by negative BTI (NBTI) in PMOS is 1.5 times larger than that induced by positive BTI (PBTI) in NMOS. However, both NBTI- and PBTI-induced degradations are the same among different antenna layers. The frequency fluctuation caused by PID is converted to threshold voltage shifts by circuit simulations. Threshold voltages shift by 8.4 and 11% owing to PID in PMOS and NMOS transistors, respectively.

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

NASA Astrophysics Data System (ADS)

Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

2018-05-01

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2014-10-01

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (Vth). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Field-Induced Disorder and Carrier Localization in Molecular Organic Transistors

NASA Astrophysics Data System (ADS)

Ando, M.; Minakata, T.; Duffy, C.; Sirringhaus, H.

2009-06-01

We propose a "field-induced polymorphous disorder" model to explain bias-stress instability in molecular organic thin-film transistors, based on the experimental results showing the strong correlation between the micro-structural change in semiconductor layer composed of penrtacene molecules and the threshold voltage (Vth) shift due to electron trapping in a reversible manner under the successive bias-stress, thermal annealing, and light irradiation.

Transient, polarity-dependent dielectric response in a twisted nematic liquid crystal under very low frequency excitation.

PubMed

Krishnamurthy, K S

2015-09-01

The electric Freedericksz transition is a second-order quadratic effect, which, in a planarly aligned nematic liquid crystal layer, manifests above a threshold field as a homogeneous symmetric distortion with maximum director-tilt in the midplane. We find that, upon excitation by a low frequency (<0.2Hz) square-wave field, the instability becomes spatially and temporally varying. This is demonstrated using calamitic liquid crystals, initially in the 90°-twisted planar configuration. The distortion occurs close to the negative electrode following each polarity switch and, for low-voltage amplitudes, decays completely in time. We use the elastically favorable geometry of Brochard-Leger walls to establish the location of maximum distortion. Thus, at successive polarity changes, the direction of extension of both annular and open walls switches between the alignment directions at the two substrates. For high voltages, this direction is largely along the midplane director, while remaining marginally oscillatory. These results are broadly understood by taking into account the time-varying and inhomogeneous field conditions that prevail soon after the polarity reverses. Polarity dependence of the instability is traced to the formation of intrinsic double layers that lead to an asymmetry in field distribution in the presence of an external bias. Momentary field elevation near the negative electrode following a voltage sign reversal leads to locally enhanced dielectric and gradient flexoelectric torques, which accounts for the surface-like phenomenon observed at low voltages. These spatiotemporal effects, also found earlier for other instabilities, are generic in nature.

Recent progress on beam stability study in the PSR

NASA Astrophysics Data System (ADS)

Wang, Tai-Sen F.; Channell, Paul J.; Cooper, Richard K.; Fitzgerald, Daniel H.; Hardek, Tom; Hutson, Richard; Jason, Andrew J.; Macek, Robert J.; Plum, Michael A.; Wilkinson, Carol

A fast transverse instability has been observed in the Los Alamos Proton Storage Ring (PSR) when the injected beam intensity reaches more than 2 (times) 10(exp 13) protons per pulse. Understanding the cause and control of this instability has taken on new importance as the neutron-scattering community considers the next generation of accelerator-driven spallation-neutron sources, which call for peak-proton intensities of 10(exp 14) per pulse or higher. Previous observations and theoretical studies indicate that the instability in the PSR is most likely driven by electrons trapped within the proton beam. Recent studies using an experimental electron-clearing system and voltage-biased pinger-electrodes for electron clearing and collection support this hypothesis. Experiments have also been performed to study the instability threshold when varying the electron production rate. Theoretical studies include a computer simulation of a simplified model for the e -- p instability and the investigation of possible electron confinement in the ring-element magnetic fields. This paper reports some recent results from these studies.

Dimensionality effects in chalcogenide-based devices

NASA Astrophysics Data System (ADS)

Kostylev, S. A.

2013-06-01

The multiplicity of fundamental bulk effects with small characteristic dimensions and short times and diversity of their combinations attracts a lot of researcher and industrialist attention in nanoelectronics and photonics to chalcogenide materials. Experimental data presented on dimensional effects of electrical chalcogenide switching (threshold voltage and threshold current dependence on device area and the film thickness), and in phase-change memory (switching, programming and read parameters), are analyzed from the point of view of choice of low dimensional materials with S-NDC and participation of electrical instabilities - high current density filaments. New ways of improving parameters of phase-change devices are proposed together with new criteria of material choice.

Bias temperature instability in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

Energetic mapping of oxide traps in MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Illarionov, Yury Yu; Knobloch, Theresia; Waltl, Michael; Rzepa, Gerhard; Pospischil, Andreas; Polyushkin, Dmitry K.; Furchi, Marco M.; Mueller, Thomas; Grasser, Tibor

2017-06-01

The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in double-gated MoS2 FETs and show that this issue is nothing else than a combination of threshold voltage shifts resulting from positive and negative bias-temperature instabilities. While these instabilities are well known from silicon devices, they are even more important in 2D devices given the considerably larger defect densities. Most importantly, the magnitudes of these threshold voltage shifts depend strongly on the density and energetic alignment of the active oxide traps. Based on this, we introduce the incremental hysteresis sweep method which allows for an accurate mapping of these defects and extract their energy distributions from simulations. By applying our method to analyze the impact of oxide traps situated in the Al2O3 top gate of several devices, we confirm its versatility. Since all 2D devices investigated so far suffer from a similar hysteresis behavior, the incremental hysteresis sweep method provides a unique and powerful way for the detailed characterization of their defect bands.

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

PubMed Central

Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo

2015-01-01

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field. Thus, accumulated hole traps near the channel/dielectric interface cause negative shift of the threshold voltage, supporting the oxygen vacancy model. In addition, we find that ionized oxygen vacancies easily recover their neutral defect configurations by capturing electrons when the Fermi level increases. Our results are in good agreement with the experimental observation that applying a positive gate bias pulse of short duration eliminates hole traps and thus leads to the recovery of device stability from persistent photoconductivity. PMID:27877799

Dispatching power system for preventive and corrective voltage collapse problem in a deregulated power system

NASA Astrophysics Data System (ADS)

Alemadi, Nasser Ahmed

Deregulation has brought opportunities for increasing efficiency of production and delivery and reduced costs to customers. Deregulation has also bought great challenges to provide the reliability and security customers have come to expect and demand from the electrical delivery system. One of the challenges in the deregulated power system is voltage instability. Voltage instability has become the principal constraint on power system operation for many utilities. Voltage instability is a unique problem because it can produce an uncontrollable, cascading instability that results in blackout for a large region or an entire country. In this work we define a system of advanced analytical methods and tools for secure and efficient operation of the power system in the deregulated environment. The work consists of two modules; (a) contingency selection module and (b) a Security Constrained Optimization module. The contingency selection module to be used for voltage instability is the Voltage Stability Security Assessment and Diagnosis (VSSAD). VSSAD shows that each voltage control area and its reactive reserve basin describe a subsystem or agent that has a unique voltage instability problem. VSSAD identifies each such agent. VS SAD is to assess proximity to voltage instability for each agent and rank voltage instability agents for each contingency simulated. Contingency selection and ranking for each agent is also performed. Diagnosis of where, why, when, and what can be done to cure voltage instability for each equipment outage and transaction change combination that has no load flow solution is also performed. A security constrained optimization module developed solves a minimum control solvability problem. A minimum control solvability problem obtains the reactive reserves through action of voltage control devices that VSSAD determines are needed in each agent to obtain solution of the load flow. VSSAD makes a physically impossible recommendation of adding reactive generation capability to specific generators to allow a load flow solution to be obtained. The minimum control solvability problem can also obtain solution of the load flow without curtailing transactions that shed load and generation as recommended by VSSAD. A minimum control solvability problem will be implemented as a corrective control, that will achieve the above objectives by using minimum control changes. The control includes; (1) voltage setpoint on generator bus voltage terminals; (2) under load tap changer tap positions and switchable shunt capacitors; and (3) active generation at generator buses. The minimum control solvability problem uses the VSSAD recommendation to obtain the feasible stable starting point but completely eliminates the impossible or onerous recommendation made by VSSAD. This thesis reviews the capabilities of Voltage Stability Security Assessment and Diagnosis and how it can be used to implement a contingency selection module for the Open Access System Dispatch (OASYDIS). The OASYDIS will also use the corrective control computed by Security Constrained Dispatch. The corrective control would be computed off line and stored for each contingency that produces voltage instability. The control is triggered and implemented to correct the voltage instability in the agent experiencing voltage instability only after the equipment outage or operating changes predicted to produce voltage instability have occurred. The advantages and the requirements to implement the corrective control are also discussed.

Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor

NASA Astrophysics Data System (ADS)

Li, Jun; Fu, Yi-Zhou; Huang, Chuan-Xin; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin

2016-04-01

This work presents a strategy of nitrogen anion doping to suppress negative gate-bias illumination instability. The electrical performance and negative gate-bias illumination stability of the ZnSnON thin film transistors (TFTs) are investigated. Compared with ZnSnO-TFT, ZnSnON-TFT has a 53% decrease in the threshold voltage shift under negative bias illumination stress and electrical performance also progresses obviously. The stability improvement of ZnSnON-TFT is attributed to the reduction in ionized oxygen vacancy defects and the photodesorption of oxygen-related molecules. It suggests that anion doping can provide an effective solution to the adverse tradeoff between field effect mobility and negative bias illumination stability.

Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

NASA Astrophysics Data System (ADS)

Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

2018-02-01

We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

Online Assessment of Voltage Stability in Power Systems with PMUs

NASA Astrophysics Data System (ADS)

Chitare, Prasad Bhagwat; Murthy Balijepalli, V. S. K.; Khaparde, S. A.

2013-05-01

Abstract: For the assessment of voltage instability which comprises the detection of voltage instability and identification of critical buses, two indices namely, system wide Qtax, and bus-specific qtax, are proposed. The Qtax, based on the sensitivity of the reactive power injections to the loading in the system provides early detection of impending voltage instability. The computed qtax indices identify the critcal buses among the load buses in the system. The identified critical buses provided optimal lacations for the corrective control actions for averting voltage instability. Additionally, for voltage stability monitoring, determining the poing of exhaustion of the reactive reserves in system is also crucial. This is addressed by proposed Q-Monitoring Index (QMI), which is the ratio of the reactive component of the source current to the sink current that flows through the adjacent transmission line. These proposed indices together can provide early indication to impending voltage instability. This has been illustrated on IEEE-39 bus system. The reactive support on identified critical buses results in maximum increase in the loadability of the system.

Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

NASA Astrophysics Data System (ADS)

Cho, Won-Ju; Ahn, Min-Ju

2017-09-01

In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised $${\\rm Si}_{0.55}{\\rm Ge}_{0.45}$$ Source/Drain

DOE PAGES

Wang, Liang; Zhang, En Xia; Schrimpf, Ronald D.; ...

2015-12-17

Here, the total ionizing dose response of Ge channel pFETs with raised Si 0.55Ge 0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

Experimental observation of the generation of cutoff solitons in a discrete L C nonlinear electrical line

NASA Astrophysics Data System (ADS)

Koon, K. Tse Ve; Marquié, P.; Dinda, P. Tchofo

2014-11-01

We address the problem of supratransmission of waves in a discrete nonlinear system, driven at one end by a periodic excitation at a frequency lying above the phonon band edge. In an experimental electrical transmission line made of 200 inductance-capacitance LC cells, we establish the existence of a voltage threshold for a supratransmission enabling the generation and propagation of cut-off solitons within the line. The decisive role of modulational instability in the onset and development of the process of generation of cut-off solitons is clearly highlighted. The phenomenon of dissipation is identified as being particularly harmful for the soliton generation, but we show that its impact can be managed by a proper choice of the amplitude of the voltage excitation of the system.

Timing discriminator using leading-edge extrapolation

DOEpatents

Gottschalk, Bernard

1983-01-01

A discriminator circuit to recover timing information from slow-rising pulses by means of an output trailing edge, a fixed time after the starting corner of the input pulse, which is nearly independent of risetime and threshold setting. This apparatus comprises means for comparing pulses with a threshold voltage; a capacitor to be charged at a certain rate when the input signal is one-third threshold voltage, and at a lower rate when the input signal is two-thirds threshold voltage; current-generating means for charging the capacitor; means for comparing voltage capacitor with a bias voltage; a flip-flop to be set when the input pulse reaches threshold voltage and reset when capacitor voltage reaches the bias voltage; and a clamping means for discharging the capacitor when the input signal returns below one-third threshold voltage.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

Timing discriminator using leading-edge extrapolation

DOEpatents

Gottschalk, B.

1981-07-30

A discriminator circuit to recover timing information from slow-rising pulses by means of an output trailing edge, a fixed time after the starting corner of the input pulse, which is nearly independent of risetime and threshold setting is described. This apparatus comprises means for comparing pulses with a threshold voltage; a capacitor to be charged at a certain rate when the input signal is one-third threshold voltage, and at a lower rate when the input signal is two-thirds threshold voltage; current-generating means for charging the capacitor; means for comparing voltage capacitor with a bias voltage; a flip-flop to be set when the input pulse reaches threshold voltage and reset when capacitor voltage reaches the bias voltage; and a clamping means for discharging the capacitor when the input signal returns below one-third threshold voltage.

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

NASA Technical Reports Server (NTRS)

Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

2011-01-01

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

Synthesis of polymer nanostructures with conductance switching properties

DOEpatents

Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

2015-03-03

The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application

NASA Astrophysics Data System (ADS)

Ho, Ching-Yuan; Chang, Yaw-Jen

2016-02-01

Both aluminum (Al) and copper (Cu), acting as transmission lines in the hydrogenated amorphous silicon of a thin film transistor (a-Si:H TFT), were studied to investigate electrical degradation including electron-migration (EM) and threshold voltage (Vt) stability and recovery performance. Under long-term current stress, the Cu material exhibited excellent resistance to EM properties, but a passivated SiNx crack was observed due to fast heat conductivity. By applying electrical stress on the gate and drain for 5 × 104 s, the power-law time dependency of the threshold voltage shift (ΔVt) indicated that the defective state creation dominated the TFT device's instability. The presence of drain stress increased the overall ΔVt because the high longitudinal field induced impact ionization and then, enhanced hot-carrier-induced electron trapping within the gate SiNx dielectric. An annealing effect prompted a stressed a-Si:H TFT back to virgin status. This study proposes better ΔVt stability and excellent resistance against electron-migration in a Cu gate device which can be considered as a candidate for a transmission line on prolonged TFT applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong

In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δmore » 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.« less

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

NASA Astrophysics Data System (ADS)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

DC dynamic pull-in instability of a dielectric elastomer balloon: an energy-based approach

NASA Astrophysics Data System (ADS)

Sharma, Atul Kumar; Arora, Nitesh; Joglekar, M. M.

2018-03-01

This paper reports an energy-based method for the dynamic pull-in instability analysis of a spherical dielectric elastomer (DE) balloon subjected to a quasi-statically applied inflation pressure and a Heaviside step voltage across the balloon wall. The proposed technique relies on establishing the energy balance at the point of maximum stretch in an oscillation cycle, followed by the imposition of an instability condition for extracting the threshold parameters. The material models of the Ogden family are employed for describing the hyperelasticity of the balloon. The accuracy of the critical dynamic pull-in parameters is established by examining the saddle-node bifurcation in the transient response of the balloon obtained by integrating numerically the equation of motion, derived using the Euler-Lagrange equation. The parametric study brings out the effect of inflation pressure on the onset of the pull-in instability in the DE balloon. A quantitative comparison between the static and dynamic pull-in parameters at four different levels of the inflation pressure is presented. The results indicate that the dynamic pull-in instability gets triggered at electric fields that are lower than those corresponding to the static instability. The results of the present investigation can find potential use in the design and development of the balloon actuators subjected to transient loading. The method developed is versatile and can be used in the dynamic instability analysis of other conservative systems of interest.

DC dynamic pull-in instability of a dielectric elastomer balloon: an energy-based approach.

PubMed

Sharma, Atul Kumar; Arora, Nitesh; Joglekar, M M

2018-03-01

This paper reports an energy-based method for the dynamic pull-in instability analysis of a spherical dielectric elastomer (DE) balloon subjected to a quasi-statically applied inflation pressure and a Heaviside step voltage across the balloon wall. The proposed technique relies on establishing the energy balance at the point of maximum stretch in an oscillation cycle, followed by the imposition of an instability condition for extracting the threshold parameters. The material models of the Ogden family are employed for describing the hyperelasticity of the balloon. The accuracy of the critical dynamic pull-in parameters is established by examining the saddle-node bifurcation in the transient response of the balloon obtained by integrating numerically the equation of motion, derived using the Euler-Lagrange equation. The parametric study brings out the effect of inflation pressure on the onset of the pull-in instability in the DE balloon. A quantitative comparison between the static and dynamic pull-in parameters at four different levels of the inflation pressure is presented. The results indicate that the dynamic pull-in instability gets triggered at electric fields that are lower than those corresponding to the static instability. The results of the present investigation can find potential use in the design and development of the balloon actuators subjected to transient loading. The method developed is versatile and can be used in the dynamic instability analysis of other conservative systems of interest.

Transverse Instabilities in the Fermilab Recycler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prost, L.R.; Burov, A.; Shemyakin, A.

2011-07-01

Transverse instabilities of the antiproton beam have been observed in the Recycler ring soon after its commissioning. After installation of transverse dampers, the threshold for the instability limit increased significantly but the instability is still found to limit the brightness of the antiprotons extracted from the Recycler for Tevatron shots. In this paper, we describe observations of the instabilities during the extraction process as well as during dedicated studies. The measured instability threshold phase density agrees with the prediction of the rigid beam model within a factor of 2. Also, we conclude that the instability threshold can be significantly loweredmore » for a bunch contained in a narrow and shallow potential well due to effective exclusion of the longitudinal tails from Landau damping.« less

Analytical expression for Risken-Nummedal-Graham-Haken instability threshold in quantum cascade lasers.

PubMed

Vukovic, N; Radovanovic, J; Milanovic, V; Boiko, D L

2016-11-14

We have obtained a closed-form expression for the threshold of Risken-Nummedal-Graham-Haken (RNGH) multimode instability in a Fabry-Pérot (FP) cavity quantum cascade laser (QCL). This simple analytical expression is a versatile tool that can easily be applied in practical situations which require analysis of QCL dynamic behavior and estimation of its RNGH multimode instability threshold. Our model for a FP cavity laser accounts for the carrier coherence grating and carrier population grating as well as their relaxation due to carrier diffusion. In the model, the RNGH instability threshold is analyzed using a second-order bi-orthogonal perturbation theory and we confirm our analytical solution by a comparison with the numerical simulations. In particular, the model predicts a low RNGH instability threshold in QCLs. This agrees very well with experimental data available in the literature.

Corona-vacuum failure mechanism test facilities

NASA Technical Reports Server (NTRS)

Lalli, V. R.; Mueller, L. A.; Koutnik, E. A.

1975-01-01

A nondestructive corona-vacuum test facility for testing high-voltage power system components has been developed using commercially available hardware. The facility simulates operating temperature and vacuum while monitoring coronal discharges with residual gases. Corona threshold voltages obtained from statorette tests with various gas-solid dielectric systems and comparison with calculated data support the following conclusions: (1) air gives the highest corona threshold voltage and helium the lowest, with argon and helium-xenon mixtures intermediate; (2) corona threshold voltage increases with gas pressure; (3) corona threshold voltage for an armature winding can be accurately calculated by using Paschen curves for a uniform field; and (4) Paschen curves for argon can be used to calculate the corona threshold voltage in He-Xe mixtures, for which Paschen curves are unavailable.-

Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Oh, Kyonghwan; Kwon, Oh-Kyong

2012-03-01

A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

NASA Astrophysics Data System (ADS)

Liyana, V. P.; Stephania, A. M.; Shiju, K.; Predeep, P.

2015-06-01

Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (VT), on-off ratio (Ion/Ioff) and their comparative analysis is reported.

First test of a high voltage feedthrough for liquid Argon TPCs connected to a 300 kV power supply

NASA Astrophysics Data System (ADS)

Cantini, C.; Gendotti, A.; Molina Bueno, L.; Murphy, S.; Radics, B.; Regenfus, C.; Rigaut, Y.-A.; Rubbia, A.; Sergiampietri, F.; Viant, T.; Wu, S.

2017-03-01

Voltages above a hundred kilo-volt will be required to generate the drift field of future very large liquid Argon Time Projection Chambers. One of the most delicate component is the feedthrough whose role is to safely deliver the very high voltage to the cathode through the thick insulating walls of the cryostat without compromising the purity of the argon inside. This requires a feedthrough that is typically meters long and carefully designed to be vacuum tight and have small heat input. Furthermore, all materials should be carefully chosen to allow operation in cryogenic conditions. In addition, electric fields in liquid argon should be kept below a threshold to reduce risks of discharges. The combination of all above requirements represents significant challenges from the design and manufacturing perspective. In this paper, we report on the successful operation of a feedthrough satisfying all the above requirements. The details of the feedthrough design and its manufacturing steps are provided. Very high voltages up to unprecedented voltages of -300 kV could be applied during long periods repeatedly. A source of instability was observed, which was specific to the setup configuration which was used for the test and not due to the feedthrough itself.

Stable Extraction of Threshold Voltage Using Transconductance Change Method for CMOS Modeling, Simulation and Characterization

NASA Astrophysics Data System (ADS)

Choi, Woo Young; Woo, Dong-Soo; Choi, Byung Yong; Lee, Jong Duk; Park, Byung-Gook

2004-04-01

We proposed a stable extraction algorithm for threshold voltage using transconductance change method by optimizing node interval. With the algorithm, noise-free gm2 (=dgm/dVGS) profiles can be extracted within one-percent error, which leads to more physically-meaningful threshold voltage calculation by the transconductance change method. The extracted threshold voltage predicts the gate-to-source voltage at which the surface potential is within kT/q of φs=2φf+VSB. Our algorithm makes the transconductance change method more practical by overcoming noise problem. This threshold voltage extraction algorithm yields the threshold roll-off behavior of nanoscale metal oxide semiconductor field effect transistor (MOSFETs) accurately and makes it possible to calculate the surface potential φs at any other point on the drain-to-source current (IDS) versus gate-to-source voltage (VGS) curve. It will provide us with a useful analysis tool in the field of device modeling, simulation and characterization.

Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition

NASA Astrophysics Data System (ADS)

Oh, Himchan; Hwang, Chi-Sun; Pi, Jae-Eun; Ki Ryu, Min; Ko Park, Sang-Hee; Yong Chu, Hye

2013-09-01

We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length.

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

PubMed

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

High voltage threshold for stable operation in a dc electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Masahiro, E-mail: masahiro@post.kek.jp; Nishimori, Nobuyuki, E-mail: n-nishim@tagen.tohoku.ac.jp

We report clear observation of a high voltage (HV) threshold for stable operation in a dc electron gun. The HV hold-off time without any discharge is longer than many hours for operation below the threshold, while it is roughly 10 min above the threshold. The HV threshold corresponds to the minimum voltage where discharge ceases. The threshold increases with the number of discharges during HV conditioning of the gun. Above the threshold, the amount of gas desorption per discharge increases linearly with the voltage difference from the threshold. The present experimental observations can be explained by an avalanche discharge modelmore » based on the interplay between electron stimulated desorption (ESD) from the anode surface and subsequent secondary electron emission from the cathode by the impact of ionic components of the ESD molecules or atoms.« less

Threshold of transverse mode coupling instability with arbitrary space charge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balbekov, V.

The threshold of the transverse mode coupling instability is calculated in framework of the square well model at arbitrary value of space charge tune shift. A new method of calculation is developed beyond the traditional expansion technique. The square, resistive, and exponential wakes are investigated. It is shown that the instability threshold goes up indefinitely when the tune shift increases. Finally, a comparison with conventional case of the parabolic potential well is performed.

Threshold of transverse mode coupling instability with arbitrary space charge

DOE PAGES

Balbekov, V.

2017-11-30

The threshold of the transverse mode coupling instability is calculated in framework of the square well model at arbitrary value of space charge tune shift. A new method of calculation is developed beyond the traditional expansion technique. The square, resistive, and exponential wakes are investigated. It is shown that the instability threshold goes up indefinitely when the tune shift increases. Finally, a comparison with conventional case of the parabolic potential well is performed.

Transverse Mode Coupling Instability of the Bunch with Oscillating Wake Field and Space Charge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balbekov, V.

Transverse mode coupling instability of a single bunch caused by oscillating wake field is considered in the paper. The instability threshold is found at different frequencies of the wake with space charge tune shift taken into account. The wake phase advance in the bunch length from 0 up tomore » $$4\\pi$$ is investigated. It is shown that the space charge can push the instability threshold up or down dependent on the phase advance. Transition region is investigated thoroughly, and simple asymptotic formulas for the threshold are represented.« less

Device for monitoring cell voltage

DOEpatents

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

On the resonance amplification of magnetic perturbations near the threshold of tearing instability in a tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arsenin, V. V., E-mail: arsenin-vv@nrcki.ru; Skovoroda, A. A., E-mail: skovoroda-aa@nrcki.ru

2015-12-15

Using a cylindrical model, a relatively simple description is presented of how a magnetic field perturbation stimulated by a low external helical current or a small helical distortion of the boundary and generating magnetic islands penetrates into a plasma column with a magnetic surface q=m/n to which tearing instability is attached. Linear analysis of the classical instability with an aperiodic growth of the perturbation in time shows that the perturbation amplitude in plasma increases in a resonant manner as the discharge parameters approach the threshold of tearing instability. In a stationary case, under the assumption on the helical character ofmore » equilibrium, which can be found from the two-dimensional nonlinear equation for the helical flux, there is no requirement for the small size of the island. Examples of calculations in which magnetic islands are large near the threshold of tearing instability are presented. The bifurcation of equilibrium near the threshold of tearing instability in plasma with a cylindrical boundary, i.e., the existence of helical equilibrium (along with cylindrical equilibrium) with large islands, is described. Moreover, helical equilibrium can also exist in the absence of instability.« less

Simulation of First-Charge Oxygen-Dimerization and Mn-Migration in Li-Rich Layered Oxides xLi 2MnO 3 ·(1 – x )Li MO 2 and Implications for Voltage Fade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benedek, Roy; Iddir, Hakim

The instabilities of Li-rich layered oxide xLi 2MnO 3•(1-x)LiMO 2 (lithium-ion-battery cathode materials) during the first charge are investigated using first-principles dynamical simulation. To complement our earlier simulations for (x = 0.4, M = Ni 0.5Mn 0.5), we address here: pure Li 2MnO 3; small x; M compositions that include Co; a composite with Co spinel: Li 2MnO 3•Li 2M 2O 4; a Li 2MnO 3 slab. Lastly, we discuss how the threshold fraction f of Li 2(1-f)MnO 3 delithiation at which instabilities occur at the surface, fth(surface), differs from that in the bulk, f th(bulk). Approaches to inhibit voltagemore » fade are discussed.« less

Simulation of First-Charge Oxygen-Dimerization and Mn-Migration in Li-Rich Layered Oxides xLi 2MnO 3 ·(1 – x )Li MO 2 and Implications for Voltage Fade

DOE PAGES

Benedek, Roy; Iddir, Hakim

2017-03-08

The instabilities of Li-rich layered oxide xLi 2MnO 3•(1-x)LiMO 2 (lithium-ion-battery cathode materials) during the first charge are investigated using first-principles dynamical simulation. To complement our earlier simulations for (x = 0.4, M = Ni 0.5Mn 0.5), we address here: pure Li 2MnO 3; small x; M compositions that include Co; a composite with Co spinel: Li 2MnO 3•Li 2M 2O 4; a Li 2MnO 3 slab. Lastly, we discuss how the threshold fraction f of Li 2(1-f)MnO 3 delithiation at which instabilities occur at the surface, fth(surface), differs from that in the bulk, f th(bulk). Approaches to inhibit voltagemore » fade are discussed.« less

Spike-Threshold Variability Originated from Separatrix-Crossing in Neuronal Dynamics

PubMed Central

Wang, Longfei; Wang, Hengtong; Yu, Lianchun; Chen, Yong

2016-01-01

The threshold voltage for action potential generation is a key regulator of neuronal signal processing, yet the mechanism of its dynamic variation is still not well described. In this paper, we propose that threshold phenomena can be classified as parameter thresholds and state thresholds. Voltage thresholds which belong to the state threshold are determined by the ‘general separatrix’ in state space. We demonstrate that the separatrix generally exists in the state space of neuron models. The general form of separatrix was assumed as the function of both states and stimuli and the previously assumed threshold evolving equation versus time is naturally deduced from the separatrix. In terms of neuronal dynamics, the threshold voltage variation, which is affected by different stimuli, is determined by crossing the separatrix at different points in state space. We suggest that the separatrix-crossing mechanism in state space is the intrinsic dynamic mechanism for threshold voltages and post-stimulus threshold phenomena. These proposals are also systematically verified in example models, three of which have analytic separatrices and one is the classic Hodgkin-Huxley model. The separatrix-crossing framework provides an overview of the neuronal threshold and will facilitate understanding of the nature of threshold variability. PMID:27546614

Spike-Threshold Variability Originated from Separatrix-Crossing in Neuronal Dynamics.

PubMed

Wang, Longfei; Wang, Hengtong; Yu, Lianchun; Chen, Yong

2016-08-22

The threshold voltage for action potential generation is a key regulator of neuronal signal processing, yet the mechanism of its dynamic variation is still not well described. In this paper, we propose that threshold phenomena can be classified as parameter thresholds and state thresholds. Voltage thresholds which belong to the state threshold are determined by the 'general separatrix' in state space. We demonstrate that the separatrix generally exists in the state space of neuron models. The general form of separatrix was assumed as the function of both states and stimuli and the previously assumed threshold evolving equation versus time is naturally deduced from the separatrix. In terms of neuronal dynamics, the threshold voltage variation, which is affected by different stimuli, is determined by crossing the separatrix at different points in state space. We suggest that the separatrix-crossing mechanism in state space is the intrinsic dynamic mechanism for threshold voltages and post-stimulus threshold phenomena. These proposals are also systematically verified in example models, three of which have analytic separatrices and one is the classic Hodgkin-Huxley model. The separatrix-crossing framework provides an overview of the neuronal threshold and will facilitate understanding of the nature of threshold variability.

Analysis of Pull-In Instability of Geometrically Nonlinear Microbeam Using Radial Basis Artificial Neural Network Based on Couple Stress Theory

PubMed Central

Heidari, Mohammad; Heidari, Ali; Homaei, Hadi

2014-01-01

The static pull-in instability of beam-type microelectromechanical systems (MEMS) is theoretically investigated. Two engineering cases including cantilever and double cantilever microbeam are considered. Considering the midplane stretching as the source of the nonlinearity in the beam behavior, a nonlinear size-dependent Euler-Bernoulli beam model is used based on a modified couple stress theory, capable of capturing the size effect. By selecting a range of geometric parameters such as beam lengths, width, thickness, gaps, and size effect, we identify the static pull-in instability voltage. A MAPLE package is employed to solve the nonlinear differential governing equations to obtain the static pull-in instability voltage of microbeams. Radial basis function artificial neural network with two functions has been used for modeling the static pull-in instability of microcantilever beam. The network has four inputs of length, width, gap, and the ratio of height to scale parameter of beam as the independent process variables, and the output is static pull-in voltage of microbeam. Numerical data, employed for training the network, and capabilities of the model have been verified in predicting the pull-in instability behavior. The output obtained from neural network model is compared with numerical results, and the amount of relative error has been calculated. Based on this verification error, it is shown that the radial basis function of neural network has the average error of 4.55% in predicting pull-in voltage of cantilever microbeam. Further analysis of pull-in instability of beam under different input conditions has been investigated and comparison results of modeling with numerical considerations shows a good agreement, which also proves the feasibility and effectiveness of the adopted approach. The results reveal significant influences of size effect and geometric parameters on the static pull-in instability voltage of MEMS. PMID:24860602

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen

1998-01-01

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters

NASA Astrophysics Data System (ADS)

Takahashi, Hajime; Hanafusa, Yuki; Kimura, Yoshinari; Kitamura, Masatoshi

2018-03-01

Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15 V.

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

PubMed

Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

2017-08-09

Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

NASA Astrophysics Data System (ADS)

Li, Min; Lan, Linfeng; Xu, Miao; Wang, Lei; Xu, Hua; Luo, Dongxiang; Zou, Jianhua; Tao, Hong; Yao, Rihui; Peng, Junbiao

2011-11-01

Thin-film transistors (TFTs) using indium zinc oxide as the active layer and anodic aluminium oxide (Al2O3) as the gate dielectric layer were fabricated. The device showed an electron mobility of as high as 10.1 cm2 V-1 s-1, an on/off current ratio of as high as ~108, and a turn-on voltage (Von) of only -0.5 V. Furthermore, this kind of TFTs was very stable under positive bias illumination stress. However, when the device experienced negative bias illumination stress, the threshold voltage shifted to the positive direction. It was found that the instability under negative bias illumination stress (NBIS) was due to the electrons from the Al gate trapping into the Al2O3 dielectric when exposed to the illuminated light. Using a stacked structure of Al2O3/SiO2 dielectrics, the device became more stable under NBIS.

Hafnium transistor process design for neural interfacing.

PubMed

Parent, David W; Basham, Eric J

2009-01-01

A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

Influence of Passive Joint Stiffness on Proprioceptive Acuity in Individuals With Functional Instability of the Ankle.

PubMed

Marinho, Hellen Veloso Rocha; Amaral, Giovanna Mendes; de Souza Moreira, Bruno; Araújo, Vanessa Lara; Souza, Thales Rezende; Ocarino, Juliana Melo; da Fonseca, Sérgio Teixeira

2017-12-01

Study Design Controlled laboratory study, cross-sectional. Background Deficits in ankle proprioceptive acuity have been reported in persons with functional instability of the ankle. Passive stiffness has been proposed as a possible mechanism underlying proprioceptive acuity. Objective To compare proprioceptive acuity and passive ankle stiffness in persons with and without functional ankle instability, and to assess the influence of passive joint stiffness on proprioceptive acuity in persons with functional ankle instability. Methods A sample of 18 subjects with and 18 without complaints of functional ankle instability following lateral ankle sprain participated. An isokinetic dynamometer was used to compare motion perception threshold, passive position sense, and passive ankle stiffness between groups. To evaluate the influence of passive stiffness on proprioceptive acuity, individuals in the lateral functional ankle instability group were divided into 2 subgroups: "high" and "low" passive ankle stiffness. Results The functional ankle instability group exhibited increased motion perception threshold when compared with the corresponding limb of the control group. Between-group differences were not found for passive position sense and passive ankle stiffness. Those in the functional ankle instability group with higher passive ankle stiffness had smaller motion perception thresholds than those with lower passive ankle stiffness. Conclusion Unlike motion perception threshold, passive position sense is not affected by the presence of functional ankle instability. Passive ankle stiffness appears to influence proprioceptive acuity in persons with functional ankle instability. J Orthop Sports Phys Ther 2017;47(12):899-905. Epub 7 Oct 2017. doi:10.2519/jospt.2017.7030.

Constant-current regulator improves tunnel diode threshold-detector performance

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

2016-11-01

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing.

Method and system for controlling a rotational speed of a rotor of a turbogenerator

DOEpatents

Stahlhut, Ronnie Dean; Vuk, Carl Thomas

2008-12-30

A system and method controls a rotational speed of a rotor or shaft of a turbogenerator in accordance with a present voltage level on a direct current bus. A lower threshold and a higher threshold are established for a speed of a rotor or shaft of a turbogenerator. A speed sensor determines speed data or a speed signal for the rotor or shaft associated with a turbogenerator. A voltage regulator adjusts a voltage level associated with a direct current bus within a target voltage range if the speed data or speed signal indicates that the speed is above the higher threshold or below the lower threshold.

Absolute versus convective helical magnetorotational instability in a Taylor-Couette flow.

PubMed

Priede, Jānis; Gerbeth, Gunter

2009-04-01

We analyze numerically the magnetorotational instability of a Taylor-Couette flow in a helical magnetic field [helical magnetorotational instability (HMRI)] using the inductionless approximation defined by a zero magnetic Prandtl number (Pr_{m}=0) . The Chebyshev collocation method is used to calculate the eigenvalue spectrum for small-amplitude perturbations. First, we carry out a detailed conventional linear stability analysis with respect to perturbations in the form of Fourier modes that corresponds to the convective instability which is not in general self-sustained. The helical magnetic field is found to extend the instability to a relatively narrow range beyond its purely hydrodynamic limit defined by the Rayleigh line. There is not only a lower critical threshold at which HMRI appears but also an upper one at which it disappears again. The latter distinguishes the HMRI from a magnetically modified Taylor vortex flow. Second, we find an absolute instability threshold as well. In the hydrodynamically unstable regime before the Rayleigh line, the threshold of absolute instability is just slightly above the convective one although the critical wavelength of the former is noticeably shorter than that of the latter. Beyond the Rayleigh line the lower threshold of absolute instability rises significantly above the corresponding convective one while the upper one descends significantly below its convective counterpart. As a result, the extension of the absolute HMRI beyond the Rayleigh line is considerably shorter than that of the convective instability. The absolute HMRI is supposed to be self-sustained and, thus, experimentally observable without any external excitation in a system of sufficiently large axial extension.

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors.

PubMed

Doris, Sean E; Pierre, Adrien; Street, Robert A

2018-04-01

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single-transistor oscillators based on OECTs with dynamic time-varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system-level design of low-power OECT-based electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lower-Order Compensation Chain Threshold-Reduction Technique for Multi-Stage Voltage Multipliers.

PubMed

Dell' Anna, Francesco; Dong, Tao; Li, Ping; Wen, Yumei; Azadmehr, Mehdi; Casu, Mario; Berg, Yngvar

2018-04-17

This paper presents a novel threshold-compensation technique for multi-stage voltage multipliers employed in low power applications such as passive and autonomous wireless sensing nodes (WSNs) powered by energy harvesters. The proposed threshold-reduction technique enables a topological design methodology which, through an optimum control of the trade-off among transistor conductivity and leakage losses, is aimed at maximizing the voltage conversion efficiency (VCE) for a given ac input signal and physical chip area occupation. The conducted simulations positively assert the validity of the proposed design methodology, emphasizing the exploitable design space yielded by the transistor connection scheme in the voltage multiplier chain. An experimental validation and comparison of threshold-compensation techniques was performed, adopting 2N5247 N-channel junction field effect transistors (JFETs) for the realization of the voltage multiplier prototypes. The attained measurements clearly support the effectiveness of the proposed threshold-reduction approach, which can significantly reduce the chip area occupation for a given target output performance and ac input signal.

Response of pMOS dosemeters on gamma-ray irradiation during its re-use.

PubMed

Pejovic, Milic M; Pejovic, Momcilo M; Jaksic, Aleksandar B

2013-08-01

Response of pMOS dosemeters during two successive irradiations with gamma-ray irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been studied. The response was followed on the basis of threshold voltage shift, determined from transfer characteristics, as a function of absorbed dose or annealing time. It was shown that the threshold voltage shifts during first and second irradiation for the gate bias during irradiation of 5 and 2.5 V insignificantly differ although complete fading was not achieved after the first cycle of annealing. In order to analyse the defects formed in oxide and at the interface during irradiation and annealing, which are responsible for threshold voltage shift, midgap and charge-pumping techniques were used. It was shown that during first irradiation and annealing a dominant influence to threshold voltage shift is made by fixed oxide traps, while at the beginning of the second annealing cycle, threshold voltage shift is a consequence of both fixed oxide traps and slow switching traps.

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

NASA Astrophysics Data System (ADS)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

NASA Astrophysics Data System (ADS)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

Appearance of ionization instability in a low-voltage arc

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobelevskii, A.V.; Nastoyashchii, A.F.

1986-09-01

The conditions for the appearance of the ionization instability in a low-voltage arc are examined. On the basis of the model of a Knudsen arc a criterion is obtained for the appearance of the instability and the possible types of dispersion relations are analyzed. The possibility of ionization instability in a short arc in cesium vapor is discussed. The results of a numerical investigation of the appearance of ionization instability, including the nonlinear stage, in a two-dimensional formulation of the problem are presented. When the fluctuations in the elec tron temperature are in antiphase with the density fluctuations, stable (long-lived)more » two-dimensional structures, which are characterized by a high degree of modulation of the degree of ionization of the gas, can form.« less

On the Mechanism of Maintenance and Instability of the Overvoltage Low-Pressure Discharge Forming a High-Current Runaway Electron Beam

NASA Astrophysics Data System (ADS)

Akishev, Yu. S.; Balakirev, A. A.; Karal'nik, V. B.; Medvedev, M. A.; Petryakov, A. V.; Trushkin, N. I.; Shafikov, A. G.

2017-12-01

Results of experiments on the study of dynamics of an overvoltage discharge at the low pressure p = 0.5-2.5 Torr up to its transition to the high-current low-voltage regime are presented, and the instability mechanism leading to a sharp voltage drop across the discharge is suggested.

Low Voltage Electrowetting-on-Dielectric Platform using Multi-Layer Insulators

PubMed Central

Lin, Yan-You; Evans, Randall D.; Welch, Erin; Hsu, Bang-Ning; Madison, Andrew C.; Fair, Richard B.

2010-01-01

A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the actuation threshold voltage was 7.2V with a 1Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135nm sputtered tantalum pentoxide (Ta2O5) and 180nm parylene C coated with 70nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage, VT, which is proportional to (t/εr)1/2, where t and εr are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200nm, 500nm, and 1µm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30pl droplets. PMID:20953362

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

PubMed Central

Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

2014-01-01

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

The Effect of Fin Pitch on Fluid Elastic Instability of Tube Arrays Subjected to Cross Flow of Water

NASA Astrophysics Data System (ADS)

Desai, Sandeep Rangrao; Pavitran, Sampat

2018-02-01

Failure of tubes in shell and tube exchangers is attributed to flow induced vibrations of such tubes. There are different excitations mechanisms due to which flow induced vibration occurs and among such mechanisms, fluid elastic instability is the most prominent one as it causes the most violent vibrations and may lead to rapid tube failures within short time. Fluid elastic instability is the fluid-structure interaction phenomenon which occurs when energy input by the fluid force exceeds energy expended in damping. This point is referred as instability threshold and corresponding velocity is referred as critical velocity. Once flow velocity exceeds critical flow velocity, the vibration amplitude increases very rapidly with flow velocity. An experimental program is carried out to determine the critical velocity at instability for plain and finned tube arrays subjected to cross flow of water. The tube array geometry is parallel triangular with cantilever end condition and pitch ratios considered are 2.6 and 2.1. The objective of research is to determine the effect of increase in pitch ratio on instability threshold for plain tube arrays and to assess the effect of addition of fins as well as increase in fin density on instability threshold for finned tube arrays. Plain tube array with two different pitch ratios; 2.1 and 2.6 and finned tube arrays with same pitch ratio; 2.6 but with two different fin pitches; such as fine (10 fpi) and coarse (4 fpi) are considered for the experimentation. Connors' equation that relates critical velocity at instability to different parameters, on which instability depends, has been used as the basis for analysis and the concept of effective diameter is used for the present investigation. The modal parameters are first suitably modified using natural frequency reduction setup that is already designed and developed to reduce natural frequency and hence to achieve experimental simulation of fluid elastic instability within the limited flow capacity of the pump. The tests are carried out first on plain tube arrays to establish the same as the datum case and results are compared to known results of plain tube arrays and hence the quality of the test rig is also assessed. The fluid elastic vibration tests are then carried out on finned tube arrays with coarse and fine fin pitches and effects of fins and fin pitch on instability threshold are shown. The vibration response of the tube is recorded for each gradually increasing flow rates of water till instability point is reached. The parameters at the instability are then presented in terms of dimensionless parameters to compare them with published results. It is concluded that, arrays with higher pitch ratios are unstable at comparatively higher flow velocities and instability threshold for finned tube arrays is delayed due to addition of the fins. Further, it is concluded that, instability threshold for finned tube arrays with fine fin pitch is delayed compared to coarse fin pitch and hence for increased fin density, instability threshold is delayed. The experimental results in terms of critical velocities obtained for different tube arrays subjected to water cross flow will serve as the base flow rates for air-water cross flow experiments to be conducted in the next phase.

Gas composition sensing using carbon nanotube arrays

NASA Technical Reports Server (NTRS)

Li, Jing (Inventor); Meyyappan, Meyya (Inventor)

2008-01-01

A method and system for estimating one, two or more unknown components in a gas. A first array of spaced apart carbon nanotubes (''CNTs'') is connected to a variable pulse voltage source at a first end of at least one of the CNTs. A second end of the at least one CNT is provided with a relatively sharp tip and is located at a distance within a selected range of a constant voltage plate. A sequence of voltage pulses {V(t.sub.n)}.sub.n at times t=t.sub.n (n=1, . . . , N1; N1.gtoreq.3) is applied to the at least one CNT, and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of a curve I(t.sub.n) for current or a curve e(t.sub.n) for electric charge transported from the at least one CNT to the constant voltage plate. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas.

A dielectric elastomer actuator coupled with water: snap-through instability and giant deformation

NASA Astrophysics Data System (ADS)

Godaba, Hareesh; Foo, Choon Chiang; Zhang, Zhi Qian; Khoo, Boo Cheong; Zhu, Jian

2015-04-01

A dielectric elastomer actuator is one class of soft actuators which can deform in response to voltage. Dielectric elastomer actuators coupled with liquid have recently been developed as soft pumps, soft lenses, Braille displays, etc. In this paper, we conduct experiments to investigate the performance of a dielectric elastomer actuator which is coupled with water. The membrane is subject to a constant water pressure, which is found to significantly affect the electromechanical behaviour of the membrane. When the pressure is small, the membrane suffers electrical breakdown before snap-through instability, and achieves a small voltage-induced deformation. When the pressure is higher to make the membrane near the verge of the instability, the membrane can achieve a giant voltage-induced deformation, with an area strain of 1165%. When the pressure is large, the membrane suffers pressure-induced snap-through instability and may collapse due to a large amount of liquid enclosed by the membrane. Theoretical analyses are conducted to interpret these experimental observations.

Method to improve reliability of a fuel cell system using low performance cell detection at low power operation

DOEpatents

Choi, Tayoung; Ganapathy, Sriram; Jung, Jaehak; Savage, David R.; Lakshmanan, Balasubramanian; Vecasey, Pamela M.

2013-04-16

A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell.

THE EFFECT OF TWO-MAGNON SCATTERING ON PARALLEL-PUMP INSTABILITY THRESHOLDS.

DTIC Science & Technology

Following a general description of the important properties and symmetries of the parallel-pump coupling and of two- magnon scattering, several...theoretical approaches to the problem of the effect of two- magnon scattering on the parallel-pump instability threshold are explored. A successful approach

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Chang Bum

2014-08-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔVT) is presented by providing a ΔVT model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ˜1.8 and ˜2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time.

High-Speed Imaging of the First Kink Mode Instability in a Magnetoplasmadynamic Thruster

NASA Technical Reports Server (NTRS)

Walker, Jonathan A.; Langendof, Samuel; Walker, Mitchell L. R.; Polzin, Kurt; Kimberlin, Adam

2013-01-01

One of the biggest challenges to efficient magnetoplasmadynamic thruster (MPDT) operation is the onset of high-frequency voltage oscillations as the discharge current is increased above a threshold value. The onset regime is closely related to magnetohydrodynamic instabilities known as kink modes. This work documents direct observation of the formation and quasi-steady state behavior of an argon discharge plasma in a MPDT operating at discharge currents of 8 to 10 kA for a pulse length of approximately 4 ms. A high-speed camera images the quasi-steady-state operation of the thruster at 26,143 fps with a frame exposure time of 10 micro s. A 0.9 neutral density filter and 488-nm argon line filter with a 10-nm bandwidth are used on separate trials to capture the time evolution of the discharge plasma. Frame-by-frame analysis of the power flux incident on the CCD sensor shows both the initial discharge plasma formation process and the steady-state behavior of the discharge plasma. Light intensity levels on the order of 4-6 W/m2 indicate radial and azimuthal asymmetries in the concentration of argon plasma in the discharge channel. The plasma concentration exhibits characteristics that suggest the presence of a helical plasma column. This helical behavior has been observed in previous experiments that characterize plasma kink mode instabilities indirectly. Therefore, the direct imaging of these plasma kink modes further supports the link between MPDT onset behavior and the excitation of the magnetohydrodynamic instabilities.

Biophysical mechanism of spike threshold dependence on the rate of rise of the membrane potential by sodium channel inactivation or subthreshold axonal potassium current

PubMed Central

Wester, Jason C.

2013-01-01

Spike threshold filters incoming inputs and thus gates activity flow through neuronal networks. Threshold is variable, and in many types of neurons there is a relationship between the threshold voltage and the rate of rise of the membrane potential (dVm/dt) leading to the spike. In primary sensory cortex this relationship enhances the sensitivity of neurons to a particular stimulus feature. While Na+ channel inactivation may contribute to this relationship, recent evidence indicates that K+ currents located in the spike initiation zone are crucial. Here we used a simple Hodgkin-Huxley biophysical model to systematically investigate the role of K+ and Na+ current parameters (activation voltages and kinetics) in regulating spike threshold as a function of dVm/dt. Threshold was determined empirically and not estimated from the shape of the Vm prior to a spike. This allowed us to investigate intrinsic currents and values of gating variables at the precise voltage threshold. We found that Na+ inactivation is sufficient to produce the relationship provided it occurs at hyperpolarized voltages combined with slow kinetics. Alternatively, hyperpolarization of the K+ current activation voltage, even in the absence of Na+ inactivation, is also sufficient to produce the relationship. This hyperpolarized shift of K+ activation allows an outward current prior to spike initiation to antagonize the Na+ inward current such that it becomes self-sustaining at a more depolarized voltage. Our simulations demonstrate parameter constraints on Na+ inactivation and the biophysical mechanism by which an outward current regulates spike threshold as a function of dVm/dt. PMID:23344915

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

NASA Astrophysics Data System (ADS)

Pace, D. C.; Austin, M. E.; Bardoczi, L.; Collins, C. S.; Crowley, B.; Davis, E.; Du, X.; Ferron, J.; Grierson, B. A.; Heidbrink, W. W.; Holcomb, C. T.; McKee, G. R.; Pawley, C.; Petty, C. C.; Podestà, M.; Rauch, J.; Scoville, J. T.; Spong, D. A.; Thome, K. E.; Van Zeeland, M. A.; Varela, J.; Victor, B.

2018-05-01

An engineering upgrade to the neutral beam system at the DIII-D tokamak [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic ( E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2 MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities and results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Austin, Max E.; Bardoczi, Laszlo; Collins, Cami S.

Here, an engineering upgrade to the neutral beam system at the DIII-D tokamak enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic (E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities andmore » results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.« less

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

DOE PAGES

Austin, Max E.; Bardoczi, Laszlo; Collins, Cami S.; ...

2018-04-20

Here, an engineering upgrade to the neutral beam system at the DIII-D tokamak enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic (E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities andmore » results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.« less

Spatiotemporal character of the Bobylev-Pikin flexoelectric instability in a twisted nematic bent-core liquid crystal exposed to very low frequency fields.

PubMed

Krishnamurthy, K S

2014-05-01

The Bobylev-Pikin striped-pattern state induced by a homogeneous electric field is a volume flexoelectric instability, originating in the midregion of a planarly aligned nematic liquid crystal layer. We find that the instability acquires a spatiotemporal character upon excitation by a low frequency (0.5 Hz) square wave field. This is demonstrated using a bent-core liquid crystal, initially in the 90°-twisted planar configuration. The flexoelectric modulation appears close to the cathode at each polarity reversal and, at low voltage amplitudes, decays completely as the field becomes steady. Correspondingly, at successive polarity changes, the stripe direction switches between the alignment directions at the two substrates. For large voltages, the stripes formed nearly along the alignment direction at the cathode gradually reorient toward the midplane director. These observations are generally attributed to inhomogeneous and time-dependent field conditions that come to exist after each polarity reversal. Polarity dependence of the instability is attributed to the formation of intrinsic double layers that bring about an asymmetry in surface fields. Momentary field elevation near the cathode following a voltage sign reversal and concomitant gradient flexoelectric polarization are considered the key factors in accounting for the surfacelike modulation observed at low voltages.

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

NASA Astrophysics Data System (ADS)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, S.

2000-01-01

In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

1999-01-01

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

NASA Astrophysics Data System (ADS)

Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

2011-03-01

A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

Instability of Insulators near Quantum Phase Transitions

NASA Astrophysics Data System (ADS)

Doron, A.; Tamir, I.; Levinson, T.; Ovadia, M.; Sacépé, B.; Shahar, D.

2017-12-01

Thin films of amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point. As a result, the insulating phase becomes unstable with respect to any applied voltage making it, at least experimentally, immeasurable. We emphasize that unlike previous reports of the absence of linear response near quantum phase transitions, in our system, the departure from equilibrium is discontinuous. Because the conditions for these discontinuities are satisfied in most insulators at low temperatures, and due to the decay of all characteristic energy scales near quantum phase transitions, we believe that this instability is general and should occur in various systems while approaching their quantum critical point. Accounting for this instability is crucial for determining the critical behavior of systems near the transition.

PEDOT-CNT coated electrodes stimulate retinal neurons at low voltage amplitudes and low charge densities

NASA Astrophysics Data System (ADS)

Samba, R.; Herrmann, T.; Zeck, G.

2015-02-01

Objective. The aim of this study was to compare two different microelectrode materials—the conductive polymer composite poly-3,4-ethylenedioxythiophene (PEDOT)-carbon nanotube(CNT) and titanium nitride (TiN)—at activating spikes in retinal ganglion cells in whole mount rat retina through stimulation of the local retinal network. Stimulation efficacy of the microelectrodes was analyzed by comparing voltage, current and transferred charge at stimulation threshold. Approach. Retinal ganglion cell spikes were recorded by a central electrode (30 μm diameter) in the planar grid of an electrode array. Extracellular stimulation (monophasic, cathodic, 0.1-1.0 ms) of the retinal network was performed using constant voltage pulses applied to the eight surrounding electrodes. The stimulation electrodes were equally spaced on the four sides of a square (400 × 400 μm). Threshold voltage was determined as the pulse amplitude required to evoke network-mediated ganglion cell spiking in a defined post stimulus time window in 50% of identical stimulus repetitions. For the two electrode materials threshold voltage, transferred charge at threshold, maximum current and the residual current at the end of the pulse were compared. Main results. Stimulation of retinal interneurons using PEDOT-CNT electrodes is achieved with lower stimulation voltage and requires lower charge transfer as compared to TiN. The key parameter for effective stimulation is a constant current over at least 0.5 ms, which is obtained by PEDOT-CNT electrodes at lower stimulation voltage due to its faradaic charge transfer mechanism. Significance. In neuroprosthetic implants, PEDOT-CNT may allow for smaller electrodes, effective stimulation in a safe voltage regime and lower energy-consumption. Our study also indicates, that the charge transferred at threshold or the charge injection capacity per se does not determine stimulation efficacy.

Low Threshold Voltage Continuous Wave Vertical-Cavity Surface-Emitting Lasers

DTIC Science & Technology

1993-04-26

Data are presented demonstrating a design and fabrication process for the realization of low- threshold , high-output vertical-cavity surface-emitting...layers), the low series resistance of the design results in a bias voltage on o 1.8 V at a threshold current of 1.9 mA for 10-micrometer-diam devices.... Vertical-cavity surface-emitting lasers.

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

NASA Astrophysics Data System (ADS)

Noh, Hyeon-Kyun; Chang, K. J.; Ryu, Byungki; Lee, Woo-Jin

2011-09-01

We perform first-principles density functional calculations to investigate the atomic and electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc oxides (a-IGZO). The formation energies of VO have a tendency to increase with increasing number of neighboring Ga atoms, whereas they are generally low in the environment surrounded with In atoms. Thus, adding Ga atoms suppresses the formation of O-deficiency defects, which are considered as the origin of device instability in a-IGZO-based thin film transistors. The conduction band edge state is characterized by the In s orbital and insensitive to disorder, in good agreement with the experimental finding that increasing the In content enhances the carrier density and mobility. In a-IGZO, while most VO defects are deep donors, some of the defects act as shallow donors due to local environments different from those in crystalline oxides. As ionized O vacancies can capture electrons, it is suggested that these defects are responsible for positive shifts of the threshold voltage observed under positive gate bias stress. Under light illumination stress, VO defects can be ionized, becoming VO2+ defects due to the negative-U behavior. When electrons are captured by applying a negative bias voltage, ionized VO2+ defects return to the original neutral charge state. Through molecular dynamics simulations, we find that the initial neutral state is restored by annealing, in good agreement with experiments, although the annealing temperature depends on the local environment. Our calculations show that VO defects play an important role in the instability of a-IGZO-based devices.

Electrically controllable liquid crystal random lasers below the Fréedericksz transition threshold.

PubMed

Lee, Chia-Rong; Lin, Jia-De; Huang, Bo-Yuang; Lin, Shih-Hung; Mo, Ting-Shan; Huang, Shuan-Yu; Kuo, Chie-Tong; Yeh, Hui-Chen

2011-01-31

This investigation elucidates for the first time electrically controllable random lasers below the threshold voltage in dye-doped liquid crystal (DDLC) cells with and without adding an azo-dye. Experimental results show that the lasing intensities and the energy thresholds of the random lasers can be decreased and increased, respectively, by increasing the applied voltage below the Fréedericksz transition threshold. The below-threshold-electric-controllability of the random lasers is attributable to the effective decrease of the spatial fluctuation of the orientational order and thus of the dielectric tensor of LCs by increasing the electric-field-aligned order of LCs below the threshold, thereby increasing the diffusion constant and decreasing the scattering strength of the fluorescence photons in their recurrent multiple scattering. This can result in the decrease in the lasing intensity of the random lasers and the increase in their energy thresholds. Furthermore, the addition of an azo-dye in DDLC cell can induce the range of the working voltage below the threshold for the control of the random laser to reduce.

The voltage threshold for arcing for solar cells in Leo - Flight and ground test results

NASA Technical Reports Server (NTRS)

Ferguson, Dale C.

1986-01-01

Ground and flight results of solar cell arcing in low earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a storage power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

The voltage threshold for arcing for solar cells in LEO: Flight and ground test results

NASA Technical Reports Server (NTRS)

Ferguson, D. C.

1986-01-01

Ground and flight results of solar cell arcing in low Earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a strong power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

Effect of ferroelectric BaTiO3 particles on the threshold voltage of a smectic A liquid crystal.

PubMed

Imamaliyev, Abbas Rahim; Ramazanov, Mahammadali Ahmad; Humbatov, Shirkhan Arastun

2018-01-01

The influence of small ferroelectric BaTiO 3 particles on the planar-homeotropic transition threshold voltage in smectic A liquid crystals consisting of p -nitrophenyl p -decyloxybenzoate and 4-cyano-4'-pentylbiphenyl were studied by using capacitance-voltage ( C - V ) measurements. It was shown that the BaTiO 3 particles significantly reduce the threshold voltage. The obtained result is explained by two factors: an increase of dielectric anisotropy of the liquid crystals and the formation of a strong electric field near polarized particles of BaTiO 3 . It was shown that the role of the second factor is dominant. The explanations of some features observed in the C - V characteristics are given.

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

2014-10-01

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Yi-Yan Lin,; Jyu-Yu Chang,; Bo-Jhang Sun,; Yan-Wei Liu,

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (Δ VTH = ± 0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

Nonlinear evolution of the Kelvin-Helmholtz instability in the double current sheet configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, Aohua; Li, Jiquan, E-mail: lijq@energy.kyoto-u.ac.jp; Kishimoto, Yasuaki

2016-03-15

The nonlinear evolution of the Kelvin-Helmholtz (KH) instability driven by a radially antisymmetric shear flow in the double current sheet configuration is numerically investigated based on a reduced magnetohydrodynamic model. Simulations reveal different nonlinear fate of the KH instability depending on the amplitude of the shear flow, which restricts the strength of the KH instability. For strong shear flows far above the KH instability threshold, the linear electrostatic-type KH instability saturates and achieves a vortex flow dominated quasi-steady state of the electromagnetic (EM) KH turbulence with large-amplitude zonal flows as well as zonal fields. The magnetic surfaces are twisted significantlymore » due to strong vortices but without the formation of magnetic islands. However, for the shear flow just over the KH instability threshold, a weak EM-type KH instability is saturated and remarkably damped by zonal flows through modifying the equilibrium shear flow. Interestingly, a secondary double tearing mode (DTM) is excited subsequently in highly damped KH turbulence, behaving as a pure DTM in a flowing plasma as described in Mao et al. [Phys. Plasmas 21, 052304 (2014)]. However, the explosive growth phenomenon is replaced by a gradually growing oscillation due to the extremely twisted islands. As a result, the release of the magnetic energy becomes slow and the global magnetic reconnection tends to be gentle. A complex nonlinear interaction between the EM KH turbulence and the DTMs occurs for the medium shear flows above the KH instability threshold, turbulent EM fluctuations experience oscillatory nonlinear growth of the DTMs, finally achieves a quasi-steady state with the interplay of the fluctuations between the DTMs and the EM KH instability.« less

Effect of ferroelectric BaTiO3 particles on the threshold voltage of a smectic A liquid crystal

PubMed Central

Imamaliyev, Abbas Rahim; Ramazanov, Mahammadali Ahmad

2018-01-01

The influence of small ferroelectric BaTiO3 particles on the planar–homeotropic transition threshold voltage in smectic A liquid crystals consisting of p-nitrophenyl p-decyloxybenzoate and 4-cyano-4′-pentylbiphenyl were studied by using capacitance–voltage (C–V) measurements. It was shown that the BaTiO3 particles significantly reduce the threshold voltage. The obtained result is explained by two factors: an increase of dielectric anisotropy of the liquid crystals and the formation of a strong electric field near polarized particles of BaTiO3. It was shown that the role of the second factor is dominant. The explanations of some features observed in the C–V characteristics are given. PMID:29600143

Electrical leakage detection circuit

DOEpatents

Wild, Arthur

2006-09-05

A method is provided for detecting electrical leakage between a power supply and a frame of a vehicle or machine. The disclosed method includes coupling a first capacitor between a frame and a first terminal of a power supply for a predetermined period of time. The current flowing between the frame and the first capacitor is limited to a predetermined current limit. It is determined whether the voltage across the first capacitor exceeds a threshold voltage. A first output signal is provided when the voltage across the capacitor exceeds the threshold voltage.

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

NASA Technical Reports Server (NTRS)

Duong, Tuan A.

2012-01-01

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Tsao, Yu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Chen, Bo-Wei; Chiang, Hsiao-Cheng; Chen, Guan-Fu; Chien, Yu-Chieh; Tai, Ya-Hsiang; Hung, Yu-Ju; Huang, Shin-Ping; Yang, Chung-Yi; Chou, Wu-Ching

2017-01-01

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

On a new scenario for the saturation of the low-threshold two-plasmon parametric decay instability of an extraordinary wave in the inhomogeneous plasma of magnetic traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusakov, E. Z., E-mail: Evgeniy.Gusakov@mail.ioffe.ru; Popov, A. Yu., E-mail: a.popov@mail.ioffe.ru; Irzak, M. A., E-mail: irzak@mail.ioffe.ru

The most probable scenario for the saturation of the low-threshold two-plasmon parametric decay instability of an electron cyclotron extraordinary wave has been analyzed. Within this scenario two upperhybrid plasmons at frequencies close to half the pump wave frequency radially trapped in the vicinity of the local maximum of the plasma density profile are excited due to the excitation of primary instability. The primary instability saturation results from the decays of the daughter upper-hybrid waves into secondary upperhybrid waves that are also radially trapped in the vicinity of the local maximum of the plasma density profile and ion Bernstein waves.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Processing circuitry for single channel radiation detector

NASA Technical Reports Server (NTRS)

Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

2009-01-01

Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.

Röntgen’s electrode-free elastomer actuators without electromechanical pull-in instability

PubMed Central

Keplinger, Christoph; Kaltenbrunner, Martin; Arnold, Nikita; Bauer, Siegfried

2010-01-01

Electrical actuators made from films of dielectric elastomers coated on both sides with stretchable electrodes may potentially be applied in microrobotics, tactile and haptic interfaces, as well as in adaptive optical elements. Such actuators with compliant electrodes are sensitive to the pull-in electromechanical instability, limiting operational voltages and attainable deformations. Electrode-free actuators driven by sprayed-on electrical charges were first studied by Röntgen in 1880. They withstand much higher voltages and deformations and allow for electrically clamped (charge-controlled) thermodynamic states preventing electromechanical instabilities. The absence of electrodes allows for direct optical monitoring of the actuated elastomer, as well as for designing new 3D actuator configurations and adaptive optical elements. PMID:20173097

A theoretical investigation on the parametric instability excited by X-mode polarized electromagnetic wave at Tromsø

NASA Astrophysics Data System (ADS)

Wang, Xiang; Cannon, Patrick; Zhou, Chen; Honary, Farideh; Ni, Binbin; Zhao, Zhengyu

2016-04-01

Recent ionospheric modification experiments performed at Tromsø, Norway, have indicated that X-mode pump wave is capable of stimulating high-frequency enhanced plasma lines, which manifests the excitation of parametric instability. This paper investigates theoretically how the observation can be explained by the excitation of parametric instability driven by X-mode pump wave. The threshold of the parametric instability has been calculated for several recent experimental observations at Tromsø, illustrating that our derived equations for the excitation of parametric instability for X-mode heating can explain the experimental observations. According to our theoretical calculation, a minimum fraction of pump wave electric field needs to be directed along the geomagnetic field direction in order for the parametric instability threshold to be met. A full-wave finite difference time domain simulation has been performed to demonstrate that a small parallel component of pump wave electric field can be achieved during X-mode heating in the presence of inhomogeneous plasma.

Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Jong Beom; Lee, Dong Ryeol

2018-04-01

We studied the effect of the addition of free hole- and electron-rich organic molecules to organic semiconductors (OSCs) in organic field effect transistors (OFETs) on the gate voltage-dependent mobility. The drain current versus gate voltage characteristics were quantitatively analyzed using an OFET mobility model of power law behavior based on hopping transport in an OSC. This analysis distinguished the threshold voltage shifts, depending on the materials and structures of the OFET device, and properly estimated the hopping transport of the charge carriers induced by the gate bias within the OSC from the power law exponent parameter. The addition of pentacene or C60 molecules to a one-monolayer pentacene-based OFET shifted the threshold voltages negatively or positively, respectively, due to the structural changes that occurred in the OFET device. On the other hand, the power law parameters revealed that the addition of charge carriers of the same or opposite polarity enhanced or hindered hopping transport, respectively. This study revealed the need for a quantitative analysis of the gate voltage-dependent mobility while distinguishing this effect from the threshold voltage effect in order to understand OSC hopping transport in OFETs.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

A Dynamical Threshold for Cardiac Delayed Afterdepolarization-Mediated Triggered Activity.

PubMed

Liu, Michael B; Ko, Christopher Y; Song, Zhen; Garfinkel, Alan; Weiss, James N; Qu, Zhilin

2016-12-06

Ventricular myocytes are excitable cells whose voltage threshold for action potential (AP) excitation is ∼-60 mV at which I Na is activated to give rise to a fast upstroke. Therefore, for a short stimulus pulse to elicit an AP, a stronger stimulus is needed if the resting potential lies further away from the I Na threshold, such as in hypokalemia. However, for an AP elicited by a long duration stimulus or a diastolic spontaneous calcium release, we observed that the stimulus needed was lower in hypokalemia than in normokalemia in both computer simulations and experiments of rabbit ventricular myocytes. This observation provides insight into why hypokalemia promotes calcium-mediated triggered activity, despite the resting potential lying further away from the I Na threshold. To understand the underlying mechanisms, we performed bifurcation analyses and demonstrated that there is a dynamical threshold, resulting from a saddle-node bifurcation mainly determined by I K1 and I NCX . This threshold is close to the voltage at which I K1 is maximum, and lower than the I Na threshold. After exceeding this dynamical threshold, the membrane voltage will automatically depolarize above the I Na threshold due to the large negative slope of the I K1 -V curve. This dynamical threshold becomes much lower in hypokalemia, especially with respect to calcium, as predicted by our theory. Because of the saddle-node bifurcation, the system can automatically depolarize even in the absence of I Na to voltages higher than the I Ca,L threshold, allowing for triggered APs in single myocytes with complete I Na block. However, because I Na is important for AP propagation in tissue, blocking I Na can still suppress premature ventricular excitations in cardiac tissue caused by calcium-mediated triggered activity. This suppression is more effective in normokalemia than in hypokalemia due to the difference in dynamical thresholds. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

PubMed

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

SNW 2000 Proceedings. Oxide Thickness Variation Induced Threshold Voltage Fluctuations in Decanano MOSFETs: a 3D Density Gradient Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Kaya, S.; Davies, J. H.; Saini, S.

2000-01-01

We use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs in a statistical manner. A description of the reconstruction procedure for the random 2D surfaces representing the 'atomistic' Si-SiO2 interface variations is presented. The procedure is based on power spectrum synthesis in the Fourier domain and can include either Gaussian or exponential spectra. The simulations show that threshold voltage variations induced by oxide thickness fluctuation become significant when the gate length of the devices become comparable to the correlation length of the fluctuations. The extent of quantum corrections in the simulations with respect to the classical case and the dependence of threshold variations on the oxide thickness are examined.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

NASA Astrophysics Data System (ADS)

Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

2016-05-01

The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun

We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al{sub 2}O{sub 3}, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV{sub th}) was 0 V even after a PBS time (t{sub stress}) of 3000 s under a gate voltage (V{submore » G}) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV{sub th} value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV{sub th} values resulting from PBS quantitatively, the average oxide charge trap density (N{sub T}) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N{sub T} resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N{sub T} near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.« less

Direct electronic probing of biological complexes formation

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Magliulo, Maria; Manoli, Kyriaki; Giordano, Francesco; Palazzo, Gerardo; Torsi, Luisa

2014-10-01

Functional bio-interlayer organic field - effect transistors (FBI-OFET), embedding streptavidin, avidin and neutravidin as bio-recognition element, have been studied to probe the electronic properties of protein complexes. The threshold voltage control has been achieved modifying the SiO2 gate diaelectric surface by means of the deposition of an interlayer of bio-recognition elements. A threshold voltage shift with respect to the unmodified dielectric surface toward more negative potential values has been found for the three different proteins, in agreement with their isoelectric points. The relative responses in terms of source - drain current, mobility and threshold voltage upon exposure to biotin of the FBI-OFET devices have been compared for the three bio-recognition elements.

Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

NASA Astrophysics Data System (ADS)

Na, Jun-Seok; Kwon, Oh-Kyong

2014-01-01

We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

North Europe power transmission system vulnerability during extreme space weather

NASA Astrophysics Data System (ADS)

Piccinelli, Roberta; Krausmann, Elisabeth

2018-01-01

Space weather driven by solar activity can induce geomagnetic disturbances at the Earth's surface that can affect power transmission systems. Variations in the geomagnetic field result in geomagnetically induced currents that can enter the system through its grounding connections, saturate transformers and lead to system instability and possibly collapse. This study analyzes the impact of extreme space weather on the northern part of the European power transmission grid for different transformer designs to understand its vulnerability in case of an extreme event. The behavior of the system was analyzed in its operational mode during a severe geomagnetic storm, and mitigation measures, like line compensation, were also considered. These measures change the topology of the system, thus varying the path of geomagnetically induced currents and inducing a local imbalance in the voltage stability superimposed on the grid operational flow. Our analysis shows that the North European power transmission system is fairly robust against extreme space weather events. When considering transformers more vulnerable to geomagnetic storms, only few episodes of instability were found in correspondence with an existing voltage instability due to the underlying system load. The presence of mitigation measures limited the areas of the network in which bus voltage instabilities arise with respect to the system in which mitigation measures are absent.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

NASA Astrophysics Data System (ADS)

Ahn, Hyung-Woo; Seok Jeong, Doo; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun

2013-07-01

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.

Low-threshold field emission in planar cathodes with nanocarbon materials

NASA Astrophysics Data System (ADS)

Zhigalov, V.; Petukhov, V.; Emelianov, A.; Timoshenkov, V.; Chaplygin, Yu.; Pavlov, A.; Shamanaev, A.

2016-12-01

Nanocarbon materials are of great interest as field emission cathodes due to their low threshold voltage. In this work current-voltage characteristics of nanocarbon electrodes were studied. Low-threshold emission was found in planar samples where field enhancement is negligible (<10). Electron work function values, calculated by Fowler-Nordheim theory, are anomalous low (<1 eV) and come into collision with directly measured work function values in fabricated planar samples (4.1-4.4 eV). Non-applicability of Fowler-Nordheim theory for the nanocarbon materials was confirmed. The reasons of low-threshold emission in nanocarbon materials are discussed.

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

Hard X-Ray Burst Detected From Caltech Plasma Jet Experiment Magnetic Reconnection Event

NASA Astrophysics Data System (ADS)

Marshall, Ryan S.; Bellan, Paul M.

2016-10-01

In the Caltech plasma jet experiment a 100 kA MHD driven jet becomes kink unstable leading to a Rayleigh-Taylor instability that quickly causes a magnetic reconnection event. Movies show that the Rayleigh-Taylor instability is simultaneous with voltage spikes across the electrodes that provide the current that drives the jet. Hard x-rays between 4 keV and 9 keV have now been observed using an x-ray scintillator detector mounted just outside of a kapton window on the vacuum chamber. Preliminary results indicate that the timing of the x-ray burst coincides with a voltage spike on the electrodes occurring in association with the Rayleigh-Taylor event. The x-ray signal accompanies the voltage spike and Rayleigh-Taylor event in approximately 50% of the shots. A possible explanation for why the x-ray signal is sometimes missing is that the magnetic reconnection event may be localized to a specific region of the plasma outside the line of sight of the scintillator. The x-ray signal has also been seen accompanying the voltage spike when no Rayleigh-Taylor is observed. This may be due to the interframe timing on the camera being longer than the very short duration of the Rayleigh-Taylor instability.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide.

PubMed

Han, Su-Ting; Zhou, Ye; Yang, Qing Dan; Zhou, Li; Huang, Long-Biao; Yan, Yan; Lee, Chun-Sing; Roy, Vellaisamy A L

2014-02-25

Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

PubMed Central

Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

2016-01-01

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

NASA Astrophysics Data System (ADS)

Lee, Suyoun; Jeong, Doo Seok; Jeong, Jeung-hyun; Zhe, Wu; Park, Young-Wook; Ahn, Hyung-Woo; Cheong, Byung-ki

2010-01-01

We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (Vth) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (tdel) of the threshold switching of Ge2Sb2Te5 and described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material.

Pulsating Hydrodynamic Instability in a Dynamic Model of Liquid-Propellant Combustion

NASA Technical Reports Server (NTRS)

Margolis, Stephen B.; Sacksteder, Kurt (Technical Monitor)

1999-01-01

Hydrodynamic (Landau) instability in combustion is typically associated with the onset of wrinkling of a flame surface, corresponding to the formation of steady cellular structures as the stability threshold is crossed. In the context of liquid-propellant combustion, such instability has recently been shown to occur for critical values of the pressure sensitivity of the burning rate and the disturbance wavenumber, significantly generalizing previous classical results for this problem that assumed a constant normal burning rate. Additionally, however, a pulsating form of hydrodynamic instability has been shown to occur as well, corresponding to the onset of temporal oscillations in the location of the liquid/gas interface. In the present work, we consider the realistic influence of a nonzero temperature sensitivity in the local burning rate on both types of stability thresholds. It is found that for sufficiently small values of this parameter, there exists a stable range of pressure sensitivities for steady, planar burning such that the classical cellular form of hydrodynamic instability and the more recent pulsating form of hydrodynamic instability can each occur as the corresponding stability threshold is crossed. For larger thermal sensitivities, however, the pulsating stability boundary evolves into a C-shaped curve in the disturbance-wavenumber/ pressure-sensitivity plane, indicating loss of stability to pulsating perturbations for all sufficiently large disturbance wavelengths. It is thus concluded, based on characteristic parameter values, that an equally likely form of hydrodynamic instability in liquid-propellant combustion is of a nonsteady, long-wave nature, distinct from the steady, cellular form originally predicted by Landau.

Pulsating Hydrodynamic Instability and Thermal Coupling in an Extended Landau/Levich Model of Liquid-Propellant Combustion. 1; Inviscid Analysis

NASA Technical Reports Server (NTRS)

Margolis, Stephen B.; Sacksteder, Kurt (Technical Monitor)

1999-01-01

Hydrodynamic (Landau) instability in combustion is typically associated with the onset of wrinkling of a flame surface, corresponding to the formation of steady cellular structures as the stability threshold is crossed. In the context of liquid-propellant combustion, such instability has recently been shown to occur for critical values of the pressure sensitivity of the burning rate and the disturbance wavenumber, significantly generalizing previous classical results for this problem that assumed a constant normal burning rate. Additionally, however, a pulsating form of hydrodynamic instability has been shown to occur as well, corresponding to the onset of temporal oscillations in the location of the liquid/gas interface. In the present work, we consider the realistic influence of a non-zero temperature sensitivity in the local burning rate on both types of stability thresholds. It is found that for sufficiently small values of this parameter, there exists a stable range of pressure sensitivities for steady, planar burning such that the classical cellular form of hydrodynamic instability and the more recent pulsating form of hydrodynamic instability can each occur as the corresponding stability threshold is crossed. For larger thermal sensitivities, however, the pulsating stability boundary evolves into a C-shaped curve in the (disturbance-wavenumber, pressure-sensitivity) plane, indicating loss of stability to pulsating perturbations for all sufficiently large disturbance wavelengths. It is thus concluded, based on characteristic parameter values, that an equally likely form of hydrodynamic instability in liquid-propellant combustion is of a non-steady, long-wave nature, distinct from the steady, cellular form originally predicted by Landau.

Jeans instability in a viscoelastic fluid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janaki, M. S.; Chakrabarti, N.; Banerjee, D.

2011-01-15

The well known Jeans instability is studied for a viscoelastic gravitational fluid using generalized hydrodynamic equations of motions. It is found that the threshold for the onset of instability appears at higher wavelengths in a viscoelastic medium. Elastic effects playing a role similar to thermal pressure are found to lower the growth rate of the gravitational instability. Such features may manifest themselves in matter constituting dense astrophysical objects.

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Improving the radiation hardness of graphene field effect transistors

DOE PAGES

Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; ...

2016-10-11

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally,more » we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.« less

Improving the radiation hardness of graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally,more » we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.« less

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

PubMed

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Variable-Threshold Threshold Elements,

DTIC Science & Technology

A threshold element is a mathematical model of certain types of logic gates and of a biological neuron. Much work has been done on the subject of... threshold elements with fixed thresholds; this study concerns itself with elements in which the threshold may be varied, variable- threshold threshold ...elements. Physical realizations include resistor-transistor elements, in which the threshold is simply a voltage. Variation of the threshold causes the

75 FR 80391 - Electric Reliability Organization Interpretations of Interconnection Reliability Operations and...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-22

... configuration to maintain system stability, acceptable voltage or power flows.\\12\\ \\12\\ In the Western... prevent system instability or cascading outages, and protect other facilities in response to transmission... nature used to address system reliability vulnerabilities to prevent system instability, cascading...

Influence of arousal threshold and depth of sleep on respiratory stability in man: analysis using a mathematical model.

PubMed

Longobardo, G S; Evangelisti, C J; Cherniack, N S

2009-12-01

We examined the effect of arousals (shifts from sleep to wakefulness) on breathing during sleep using a mathematical model. The model consisted of a description of the fluid dynamics and mechanical properties of the upper airways and lungs, as well as a controller sensitive to arterial and brain changes in CO(2), changes in arterial oxygen, and a neural input, alertness. The body was divided into multiple gas store compartments connected by the circulation. Cardiac output was constant, and cerebral blood flows were sensitive to changes in O(2) and CO(2) levels. Arousal was considered to occur instantaneously when afferent respiratory chemical and neural stimulation reached a threshold value, while sleep occurred when stimulation fell below that value. In the case of rigid and nearly incompressible upper airways, lowering arousal threshold decreased the stability of breathing and led to the occurrence of repeated apnoeas. In more compressible upper airways, to maintain stability, increasing arousal thresholds and decreasing elasticity were linked approximately linearly, until at low elastances arousal thresholds had no effect on stability. Increased controller gain promoted instability. The architecture of apnoeas during unstable sleep changed with the arousal threshold and decreases in elasticity. With rigid airways, apnoeas were central. With lower elastances, apnoeas were mixed even with higher arousal thresholds. With very low elastances and still higher arousal thresholds, sleep consisted totally of obstructed apnoeas. Cycle lengths shortened as the sleep architecture changed from mixed apnoeas to total obstruction. Deeper sleep also tended to promote instability by increasing plant gain. These instabilities could be countered by arousal threshold increases which were tied to deeper sleep or accumulated aroused time, or by decreased controller gains.

Prototypical model for tensional wrinkling in thin sheets

PubMed Central

Davidovitch, Benny; Schroll, Robert D.; Vella, Dominic; Adda-Bedia, Mokhtar; Cerda, Enrique A.

2011-01-01

The buckling and wrinkling of thin films has recently seen a surge of interest among physicists, biologists, mathematicians, and engineers. This activity has been triggered by the growing interest in developing technologies at ever-decreasing scales and the resulting necessity to control the mechanics of tiny structures, as well as by the realization that morphogenetic processes, such as the tissue-shaping instabilities occurring in animal epithelia or plant leaves, often emerge from mechanical instabilities of cell sheets. Although the most basic buckling instability of uniaxially compressed plates was understood by Euler more than two centuries ago, recent experiments on nanometrically thin (ultrathin) films have shown significant deviations from predictions of standard buckling theory. Motivated by this puzzle, we introduce here a theoretical model that allows for a systematic analysis of wrinkling in sheets far from their instability threshold. We focus on the simplest extension of Euler buckling that exhibits wrinkles of finite length—a sheet under axisymmetric tensile loads. The first study of this geometry, which is attributed to Lamé, allows us to construct a phase diagram that demonstrates the dramatic variation of wrinkling patterns from near-threshold to far-from-threshold conditions. Theoretical arguments and comparison to experiments show that the thinner the sheet is, the smaller is the compressive load above which the far-from-threshold regime emerges. This observation emphasizes the relevance of our analysis for nanomechanics applications. PMID:22042841

Asymptotic Laws of Thermovibrational Convecton in a Horizontal Fluid Layer

NASA Astrophysics Data System (ADS)

Smorodin, B. L.; Myznikova, B. I.; Keller, I. O.

2017-02-01

Theoretical study of convective instability is applied to a horizontal layer of incompressible single-component fluid subjected to the uniform steady gravity, longitudinal vibrations of arbitrary frequency and initial temperature difference. The mathematical model of thermovibrational convection has the form of initial boundary value problem for the Oberbeck-Boussinesq system of equations. The problems are solved using different simulation strategies, like the method of averaging, method of multiple scales, Galerkin approach, Wentzel-Kramers-Brillouin method and Floquet technique. The numerical analysis has shown that the effect of vibrations on the stability threshold is complex: vibrations can either stabilize or destabilize the basic state depending on values of the parameters. The influence of the Prandtl number on the instability thresholds is investigated. The asymptotic behaviour of critical values of the parameters is studied in two limiting cases: (i) small amplitude and (ii) low frequency of vibration. In case (i), the instability is due to the influence of thermovibrational mechanism on the classical Rayleigh-Benard convective instability. In case (ii), the nature of the instability is related to the instability of oscillating counter-streams with a cubic profile.

Evolution of Multiple Double Layer in Glow discharge and its inherent Properties

NASA Astrophysics Data System (ADS)

Alex, Prince; A, Saravanan; Sinha, Suraj

2016-10-01

Formation and evolution of multiple anodic double layers (MADLs) were experimentally studied in glow discharge plasma. The boundary condition for the existence of MADL was identified in terms of threshold bias and ambient working pressure. The MADL formation is accompanied by an explosive growth in anode current and consequent current-voltage characteristics follows a hysteresis loop. The analysis yield that stable MADLs is only observed when the control voltage V2 is between a certain critical values (Vq > νte MADL completely transforms to an intense high current carrying unstable anode glow. The floating potential analysis carried out using three axially positioned electrostatic probes shows a bipolar signature of DL with as the control parameter is varied. The floating potential analysis also shows that hysteresis arises due to the difference in magnitude of electric field required to align the space charges in the DL sheet at the control voltage changes forward and backward. The effect of pressure on MADL indicates that the MADL structure advances towards anode surface as the pressure is increases. The power dumped (W) in the MADL is estimated to decrease with increase in pressure while the same increase in the anode glow.

Manipulating Energetic Ion Velocity Space to Control Instabilities and Improve Tokamak Performance

NASA Astrophysics Data System (ADS)

Pace, David C.

2017-10-01

The first-ever demonstration of independent current (I) and voltage (V) control of high power neutral beams in tokamak plasma shots has successfully reduced the prevalence of instabilities and improved energetic ion confinement in experiments at the DIII-D tokamak. Energetic ions drive Alfvén eigenmode (AE) instabilities through a resonant energy exchange that can increase radial diffusion of the ions, thereby reducing beam heating and current drive efficiency. This resonance is incredibly sensitive to the ion velocity and orbit topology, which then allows changes in beam voltage (keeping the injected power constant through compensating changes in current) to remove nearly all instability drive. The implementation of temporal control of beam current and voltage allows for a reduction in the resonant energetic ion velocity space while maintaining the ability to inject maximum power. DIII-D low confinement (L-mode) plasmas demonstrate a nearly complete avoidance of AE activity in plasmas with 55 kV beam injection compared to the many AEs that are observed in plasmas featuring similar total beam power at 70 kV. Across the experimental range of beam settings, resulting increases in beam divergence have been inconsequential. High performance steady-state scenarios featuring equilibria that are conducive to dense arrays of Alfvén waves benefit the most from instability control mechanisms. One such scenario, the so-called high qmin scenario, demonstrates improved confinement and equilibrium evolution when the injected beam voltage begins at lower values (i.e., fewer resonances) and then increases as the plasma reaches its stationary period. These results suggest a future in which plasma confinement and performance is improved through continuous feedback control of auxiliary heating systems such that the energetic ion distribution is constantly adapted to produce an optimal plasma state. Work supported by US DOE under DE-FC02-04ER54698.

Dynamics of nonspherical microbubble oscillations above instability threshold

NASA Astrophysics Data System (ADS)

Guédra, Matthieu; Cleve, Sarah; Mauger, Cyril; Blanc-Benon, Philippe; Inserra, Claude

2017-12-01

Time-resolved dynamics of nonspherical oscillations of micrometer-sized bubbles are captured and analyzed using high-speed imaging. The axisymmetry of the bubble shape is ensured with certainty for the first time from the recordings of two synchronous high-speed cameras located at 90∘. The temporal dynamics of finite-amplitude nonspherical oscillations are then analyzed for various acoustic pressures above the instability threshold. The experimental results are compared with recent theories accounting for nonlinearities and mode coupling, highlighting particular effects inherent to these mechanisms (saturation of the instability, triggering of nonparametric shape modes). Finally, the amplitude of the nonspherical oscillations is given as function of the driving pressure both for quadrupolar and octupolar bubbles.

Experimental Evidence for the Los Alamos Proton Storage Ring Beam Instability

NASA Astrophysics Data System (ADS)

Plum, M.; Fitzgerald, D. H.; Macek, R.; Sander, O.; Thiessen, H. A.; Wang, T. S.; Wilkinson, C.

1997-05-01

Although the exact instability mechanism at the Proton Storage Ring (PSR) has not yet been conclusively identified, the evidence gathered to date is consistent with an e-p instability. We have recently acquired new data which shows that clearing electrodes significantly affect the instability threshold. A set of comprehensive measurements is also planned for the first months of 1997. In this paper we will present our latest data.

Effective calculation of power system low-voltage solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Overbye, T.J.; Klump, R.P.

1996-02-01

This paper develops a method for reliably determining the set of low-voltage solutions which are closest to the operable power flow solution. These solutions are often used in conjunction with techniques such as energy methods and the voltage instability proximity index (VIPI) for assessing system voltage stability. This paper presents an algorithm which provides good initial guesses for these solutions. The results are demonstrated on a small system and on larger systems with up to 2,000 buses.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

Low power ovonic threshold switching characteristics of thin GeTe{sub 6} films using conductive atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manivannan, Anbarasu, E-mail: anbarasu@iiti.ac.in, E-mail: ranjith@iith.ac.in; Sahu, Smriti; Myana, Santosh Kumar

2014-12-15

Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A ∼12–15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe{sub 6} thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6–8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, V{sub TH} of 2.4 ± 0.5 V and the off state was retained below a holding voltage,more » V{sub H} of 0.6 ± 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied.« less

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al{sub 2}O{sub 3} gate dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yu-Hong; Yu, Ming-Jiue; Lin, Ruei-Ping

2016-01-18

Low-temperature atomic layer deposition (ALD) was employed to deposit Al{sub 2}O{sub 3} as a gate dielectric in amorphous In–Ga–Zn–O thin-film transistors fabricated at temperatures below 120 °C. The devices exhibited a negligible threshold voltage shift (ΔV{sub T}) during negative bias stress, but a more pronounced ΔV{sub T} under positive bias stress with a characteristic turnaround behavior from a positive ΔV{sub T} to a negative ΔV{sub T}. This abnormal positive bias instability is explained using a two-process model, including both electron trapping and hydrogen release and migration. Electron trapping induces the initial positive ΔV{sub T}, which can be fitted using the stretchedmore » exponential function. The breakage of residual AlO-H bonds in low-temperature ALD Al{sub 2}O{sub 3} is triggered by the energetic channel electrons. The hydrogen atoms then diffuse toward the In–Ga–Zn–O channel and induce the negative ΔV{sub T} through electron doping with power-law time dependence. A rapid partial recovery of the negative ΔV{sub T} after stress is also observed during relaxation.« less

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ettisserry, D. P., E-mail: deva@umd.edu, E-mail: neil@umd.edu; Goldsman, N., E-mail: deva@umd.edu, E-mail: neil@umd.edu; Akturk, A.

We use hybrid-functional density functional theory-based Charge Transition Levels (CTLs) to study the electrical activity of near-interfacial oxygen vacancies located in the oxide side of 4H-Silicon Carbide (4H-SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Based on the “amorphousness” of their local atomic environment, oxygen vacancies are shown to introduce their CTLs either within (permanently electrically active) or outside of (electrically inactive) the 4H-SiC bandgap. The “permanently electrically active” centers are likely to cause threshold voltage (V{sub th}) instability at room temperature. On the other hand, we show that the “electrically inactive” defects could be transformed into various “electrically active” configurations undermore » simultaneous application of negative bias and high temperature stresses. Based on this observation, we present a model for plausible oxygen vacancy defects that could be responsible for the recently observed excessive worsening of V{sub th} instability in 4H-SiC power MOSFETs under high temperature-and-gate bias stress. This model could also explain the recent electrically detected magnetic resonance observations in 4H-SiC MOSFETs.« less

76 FR 23171 - Electric Reliability Organization Interpretations of Interconnection Reliability Operations and...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-26

... (MW and MVAR), or system configuration to maintain system stability, acceptable voltage or power flows... identified system conditions to prevent system instability or cascading outages, and protect other facilities... instability, cascading outages, and protect other facilities in response to contingencies. Therefore, a...

Relationship between left atrium catheter contact force and pacing threshold.

PubMed

Barrio-López, Teresa; Ortiz, Mercedes; Castellanos, Eduardo; Lázaro, Carla; Salas, Jefferson; Madero, Sergio; Almendral, Jesús

2017-08-01

The purpose of this study is to analyze the relationship between contact force (CF) and pacing threshold in left atrium (LA). Six to ten LA sites were studied in 28 consecutive patients with atrial fibrillation undergoing pulmonary vein isolation. Median CF, bipolar and unipolar electrogram voltage, impedance, and bipolar and unipolar thresholds for consistent constant capture and for consistent intermittent capture were measured at each site. Pacing threshold measurements were performed at 188 LA sites. Both unipolar and bipolar pacing thresholds correlated significantly with median CF; however, unipolar pacing threshold correlated better (unipolar: Pearson R -0.45; p < 0.001; Spearman Rho -0.62; p < 0.001, bipolar: Pearson R -0.39; p < 0.001; Spearman Rho -0.52; p < 0.001). Consistent constant capture threshold had better correlation with median CF than consistent intermittent capture threshold for both unipolar and bipolar pacing (Pearson R -0.45; p < 0.001 and Spearman Rho -0.62; p < 0.001 vs. Pearson R -0.35; p < 0.001; Spearman Rho -0.52; p < 0.001). The best pacing threshold cutoff point to detect a good CF (>10 g) was 3.25 mA for unipolar pacing with 69% specificity and 73% sensitivity. Both increased to 80% specificity and 74% sensitivity for sites with normal bipolar voltage and a pacing threshold cutoff value of 2.85 mA. Pacing thresholds correlate with CF in human not previously ablated LA. Since the combination of a normal bipolar voltage and a unipolar pacing threshold <2.85 mA provide reasonable parameters of validity, pacing threshold could be of interest as a surrogate for CF in LA.

Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

NASA Astrophysics Data System (ADS)

Wang, Ziwen; Kumar, Suhas; Wong, H.-S. Philip; Nishi, Yoshio

2018-02-01

Threshold switches based on niobium oxide (NbOx) are promising candidates as bidirectional selector devices in crossbar memory arrays and building blocks for neuromorphic computing. Here, it is experimentally demonstrated that the electrical characteristics of NbOx threshold switches can be tuned by engineering the thermal insulation. Increasing the thermal insulation by ˜10× is shown to produce ˜7× reduction in threshold current and ˜45% reduction in threshold voltage. The reduced threshold voltage leads to ˜5× reduction in half-selection leakage, which highlights the effectiveness of reducing half-selection leakage of NbOx selectors by engineering the thermal insulation. A thermal feedback model based on Poole-Frenkel conduction in NbOx can explain the experimental results very well, which also serves as a piece of strong evidence supporting the validity of the Poole-Frenkel based mechanism in NbOx threshold switches.

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates.

PubMed

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

2018-08-17

Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 -SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm -2 on hBN substrate as compared to 1.1 × 10 12 cm -2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.

Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

PubMed

Cheng, C H; Chou, K I; Hsu, H H

2015-02-01

We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

Genomic instability in cancer: Teetering on the limit of tolerance

PubMed Central

Andor, Noemi; Maley, Carlo C.; Ji, Hanlee P.

2017-01-01

Cancer genomic instability contributes to the phenomenon of intratumoral genetic heterogeneity, provides the genetic diversity required for natural selection and enables the extensive phenotypic diversity that is frequently observed among patients. Genomic instability has previously been associated with poor prognosis. However, we have evidence that for solid tumors of epithelial origin, extreme levels of genomic instability, where more than 75% of the genome is subject to somatic copy number alterations, are associated with a potentially better prognosis compared to intermediate levels under this threshold. This has been observed in clonal subpopulations of larger size, especially when genomic instability is shared among a limited number of clones. We hypothesize that cancers with extreme levels of genomic instability may be teetering on the brink of a threshold where so much of their genome is adversely altered that cells rarely replicate successfully. Another possibility is that tumors with high levels of genomic instability are more immunogenic than other cancers with a less extensive burden of genetic aberrations. Regardless of the exact mechanism, but hinging on our ability to quantify how a tumor’s burden of genetic aberrations is distributed among coexisting clones – genomic instability has important therapeutic implications. Herein, we explore the possibility that a high genomic instability could be the basis for a tumor’s sensitivity to DNA damaging therapies. We primarily focus on studies of epithelial-derived solid tumors. PMID:28432052

f-Mode Secular Instabilities in Deleptonizing Fizzlers

NASA Astrophysics Data System (ADS)

Imamura, James N.; Durisen, Richard H.

2004-12-01

Fizzlers are intermediate states that may form between white dwarf and neutron star densities during the collapse of massive rotating stars. This paper studies the gravitational radiation reaction (GRR) driven f-mode secular instabilities of fizzlers with angular momentum distributions h(mc) appropriate to the core collapse of massive rotating stars, where h is the specific angular momentum and mc is the cylindrical mass fraction. For core collapses that maintain axial symmetry, the h(mc) of the remnant reflects the conditions in the precollapse stellar core, and, thus, the h(mc) will resemble that of a uniformly rotating star supported by the pressure of relativistically degenerate electrons. Such an h(mc) concentrates most angular momentum toward the equatorial region of the object. The onset of f-mode secular instabilities in such fizzlers is affected strongly by the h(mc), whereas instability depends only weakly on compressibility. For a broad range of fizzler equations of state and the core h(mc), the f-mode secular instability thresholds drop to T/W~0.034-0.042, 0.019-0.021, and 0.012-0.0135, for m=2, 3, and 4, respectively. These same thresholds with the Maclaurin spheroid h(mc) are T/W=0.13-0.15, 0.10-0.11, and 0.08-0.09, respectively. The growth times τgw for GRR-driven m=2 modes are long. For fizzlers with specific angular momentum J/M~1.5×1016 cm2 s-1 and T/W<~0.24 (ρc<~1014 g cm-3), τgw>400 s. For these fizzlers, τgw>>τde, the deleptonization timescale, and GRR-driven secular instabilities will not grow along a deleptonizing fizzler sequence except, possibly, at T/W near the dynamic bar mode instability threshold, T/W~0.27.

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

DOEpatents

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

NASA Astrophysics Data System (ADS)

Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

2015-08-01

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Threshold-voltage modulated phase change heterojunction for application of high density memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Baihan; Tong, Hao, E-mail: tonghao@hust.edu.cn; Qian, Hang

2015-09-28

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-raymore » photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.« less

Extracellular voltage threshold settings can be tuned for optimal encoding of movement and stimulus parameters

NASA Astrophysics Data System (ADS)

Oby, Emily R.; Perel, Sagi; Sadtler, Patrick T.; Ruff, Douglas A.; Mischel, Jessica L.; Montez, David F.; Cohen, Marlene R.; Batista, Aaron P.; Chase, Steven M.

2016-06-01

Objective. A traditional goal of neural recording with extracellular electrodes is to isolate action potential waveforms of an individual neuron. Recently, in brain-computer interfaces (BCIs), it has been recognized that threshold crossing events of the voltage waveform also convey rich information. To date, the threshold for detecting threshold crossings has been selected to preserve single-neuron isolation. However, the optimal threshold for single-neuron identification is not necessarily the optimal threshold for information extraction. Here we introduce a procedure to determine the best threshold for extracting information from extracellular recordings. We apply this procedure in two distinct contexts: the encoding of kinematic parameters from neural activity in primary motor cortex (M1), and visual stimulus parameters from neural activity in primary visual cortex (V1). Approach. We record extracellularly from multi-electrode arrays implanted in M1 or V1 in monkeys. Then, we systematically sweep the voltage detection threshold and quantify the information conveyed by the corresponding threshold crossings. Main Results. The optimal threshold depends on the desired information. In M1, velocity is optimally encoded at higher thresholds than speed; in both cases the optimal thresholds are lower than are typically used in BCI applications. In V1, information about the orientation of a visual stimulus is optimally encoded at higher thresholds than is visual contrast. A conceptual model explains these results as a consequence of cortical topography. Significance. How neural signals are processed impacts the information that can be extracted from them. Both the type and quality of information contained in threshold crossings depend on the threshold setting. There is more information available in these signals than is typically extracted. Adjusting the detection threshold to the parameter of interest in a BCI context should improve our ability to decode motor intent, and thus enhance BCI control. Further, by sweeping the detection threshold, one can gain insights into the topographic organization of the nearby neural tissue.

Extracellular voltage threshold settings can be tuned for optimal encoding of movement and stimulus parameters

PubMed Central

Oby, Emily R; Perel, Sagi; Sadtler, Patrick T; Ruff, Douglas A; Mischel, Jessica L; Montez, David F; Cohen, Marlene R; Batista, Aaron P; Chase, Steven M

2018-01-01

Objective A traditional goal of neural recording with extracellular electrodes is to isolate action potential waveforms of an individual neuron. Recently, in brain–computer interfaces (BCIs), it has been recognized that threshold crossing events of the voltage waveform also convey rich information. To date, the threshold for detecting threshold crossings has been selected to preserve single-neuron isolation. However, the optimal threshold for single-neuron identification is not necessarily the optimal threshold for information extraction. Here we introduce a procedure to determine the best threshold for extracting information from extracellular recordings. We apply this procedure in two distinct contexts: the encoding of kinematic parameters from neural activity in primary motor cortex (M1), and visual stimulus parameters from neural activity in primary visual cortex (V1). Approach We record extracellularly from multi-electrode arrays implanted in M1 or V1 in monkeys. Then, we systematically sweep the voltage detection threshold and quantify the information conveyed by the corresponding threshold crossings. Main Results The optimal threshold depends on the desired information. In M1, velocity is optimally encoded at higher thresholds than speed; in both cases the optimal thresholds are lower than are typically used in BCI applications. In V1, information about the orientation of a visual stimulus is optimally encoded at higher thresholds than is visual contrast. A conceptual model explains these results as a consequence of cortical topography. Significance How neural signals are processed impacts the information that can be extracted from them. Both the type and quality of information contained in threshold crossings depend on the threshold setting. There is more information available in these signals than is typically extracted. Adjusting the detection threshold to the parameter of interest in a BCI context should improve our ability to decode motor intent, and thus enhance BCI control. Further, by sweeping the detection threshold, one can gain insights into the topographic organization of the nearby neural tissue. PMID:27097901

Extracellular voltage threshold settings can be tuned for optimal encoding of movement and stimulus parameters.

PubMed

Oby, Emily R; Perel, Sagi; Sadtler, Patrick T; Ruff, Douglas A; Mischel, Jessica L; Montez, David F; Cohen, Marlene R; Batista, Aaron P; Chase, Steven M

2016-06-01

A traditional goal of neural recording with extracellular electrodes is to isolate action potential waveforms of an individual neuron. Recently, in brain-computer interfaces (BCIs), it has been recognized that threshold crossing events of the voltage waveform also convey rich information. To date, the threshold for detecting threshold crossings has been selected to preserve single-neuron isolation. However, the optimal threshold for single-neuron identification is not necessarily the optimal threshold for information extraction. Here we introduce a procedure to determine the best threshold for extracting information from extracellular recordings. We apply this procedure in two distinct contexts: the encoding of kinematic parameters from neural activity in primary motor cortex (M1), and visual stimulus parameters from neural activity in primary visual cortex (V1). We record extracellularly from multi-electrode arrays implanted in M1 or V1 in monkeys. Then, we systematically sweep the voltage detection threshold and quantify the information conveyed by the corresponding threshold crossings. The optimal threshold depends on the desired information. In M1, velocity is optimally encoded at higher thresholds than speed; in both cases the optimal thresholds are lower than are typically used in BCI applications. In V1, information about the orientation of a visual stimulus is optimally encoded at higher thresholds than is visual contrast. A conceptual model explains these results as a consequence of cortical topography. How neural signals are processed impacts the information that can be extracted from them. Both the type and quality of information contained in threshold crossings depend on the threshold setting. There is more information available in these signals than is typically extracted. Adjusting the detection threshold to the parameter of interest in a BCI context should improve our ability to decode motor intent, and thus enhance BCI control. Further, by sweeping the detection threshold, one can gain insights into the topographic organization of the nearby neural tissue.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging

PubMed Central

Muir, Ryan D.; Pogranichney, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2014-01-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment. PMID:25178010

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging.

PubMed

Muir, Ryan D; Pogranichney, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2014-09-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment.

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, Subhash

1999-01-01

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Reactive power and voltage control strategy based on dynamic and adaptive segment for DG inverter

NASA Astrophysics Data System (ADS)

Zhai, Jianwei; Lin, Xiaoming; Zhang, Yongjun

2018-03-01

The inverter of distributed generation (DG) can support reactive power to help solve the problem of out-of-limit voltage in active distribution network (ADN). Therefore, a reactive voltage control strategy based on dynamic and adaptive segment for DG inverter is put forward to actively control voltage in this paper. The proposed strategy adjusts the segmented voltage threshold of Q(U) droop curve dynamically and adaptively according to the voltage of grid-connected point and the power direction of adjacent downstream line. And then the reactive power reference of DG inverter can be got through modified Q(U) control strategy. The reactive power of inverter is controlled to trace the reference value. The proposed control strategy can not only control the local voltage of grid-connected point but also help to maintain voltage within qualified range considering the terminal voltage of distribution feeder and the reactive support for adjacent downstream DG. The scheme using the proposed strategy is compared with the scheme without the reactive support of DG inverter and the scheme using the Q(U) control strategy with constant segmented voltage threshold. The simulation results suggest that the proposed method has a significant improvement on solving the problem of out-of-limit voltage, restraining voltage variation and improving voltage quality.

Mixed Pierce-two-stream instability development in an extraction system of a negative ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barminova, H. Y., E-mail: barminova@mephi.ru; Chikhachev, A. S.

2016-02-15

Mixed Pierce-two-stream instability may occur in an extraction system of a negative ion source based on a volume-produced plasma. The reasons for instability development are discussed. Analytically the conditions of unstable beam propagation are determined. The instability threshold is shown to be increased compared with the pure Pierce instability. The influence of inclined perturbations on the instability behavior is investigated. The numerical calculations are performed in COMSOL Multiphysics. The simulation results confirm the existence of such a mixed instability appearance that develops due to both the electrons of the external circuit and the background positive ions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model,more » in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.« less

Change of wandering pattern with anisotropy in step kinetics

NASA Astrophysics Data System (ADS)

Sato, Masahide; Uwaha, Makio

1999-03-01

We study the effect of anisotropy in step kinetics on the wandering instability of an isolated step. With the asymmetry of the step kinetics, a straight step becomes unstable for long wavelength fluctuations and wanders when the step velocity exceeds a critical value. Near the threshold of the instability, an isotropic step obeys the Kuramoto-Sivashinsky equation, HT=- HXX- HXXXX+( H2X/2), and shows a chaotic pattern. A step with anisotropic kinetics obeys the Benney equation, HT=- HXX- δHXXX- HXXXX+( H2X/2), and the wandering pattern changes: when the anisotropy is strong, δ≫1, the step shows a regular pattern. Near the threshold of the instability, the anisotropy effect becomes strong while that of the step stiffness becomes weak.

Instability of Longitudinal Wave in Magnetized Strongly Coupled Dusty Plasma

NASA Astrophysics Data System (ADS)

Xie, Bai-Song

2003-12-01

Instability of longitudinal wave in magnetized strongly coupled dusty plasmas is investigated. The dust charging relaxation is taken into account. It is found that there exists threshold of interdust distance for the instability of wave, which is determined significantly by the dust charging relaxation, the coupling parameter of high correlation of dust as well the strength of magnetic field.

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

Relativistic electromagnetic ion cyclotron instabilities

NASA Astrophysics Data System (ADS)

Chen, K. R.; Huang, R. D.; Wang, J. C.; Chen, Y. Y.

2005-03-01

The relativistic instabilities of electromagnetic ion cyclotron waves driven by MeV ions are analytically and numerically studied. As caused by wave magnetic field and in sharp contrast to the electrostatic case, interesting characteristics such as Alfvénic behavior and instability transition are discovered and illuminated in detail. The instabilities are reactive and are raised from the coupling of slow ions’ first-order resonance and fast ions’ second-order resonance, that is an essential extra mechanism due to relativistic effect. Because of the wave magnetic field, the nonresonant plasma dielectric is usually negative and large, that affects the instability conditions and scaling laws. A negative harmonic cyclotron frequency mismatch between the fast and slow ions is required for driving a cubic (and a coupled quadratic) instability; the cubic (square) root scaling of the peak growth rate makes the relativistic effect more important than classical mechanism, especially for low fast ion density and Lorentz factor being close to unity. For the cubic instability, there is a threshold (ceiling) on the slow ion temperature and density (the external magnetic field and the fast ion energy); the Alfvén velocity is required to be low. This Alfvénic behavior is interesting in physics and important for its applications. The case of fast protons in thermal deuterons is numerically studied and compared with the analytical results. When the slow ion temperature or density (the external magnetic field or the fast ion energy) is increased (reduced) to about twice (half) the threshold (ceiling), the same growth rate peak transits from the cubic instability to the coupled quadratic instability and a different cubic instability branch appears. The instability transition is an interesting new phenomenon for instability.

A Survey of Architectural Techniques for Near-Threshold Computing

DOE PAGES

Mittal, Sparsh

2015-12-28

Energy efficiency has now become the primary obstacle in scaling the performance of all classes of computing systems. In low-voltage computing and specifically, near-threshold voltage computing (NTC), which involves operating the transistor very close to and yet above its threshold voltage, holds the promise of providing many-fold improvement in energy efficiency. However, use of NTC also presents several challenges such as increased parametric variation, failure rate and performance loss etc. Our paper surveys several re- cent techniques which aim to offset these challenges for fully leveraging the potential of NTC. By classifying these techniques along several dimensions, we also highlightmore » their similarities and differences. Ultimately, we hope that this paper will provide insights into state-of-art NTC techniques to researchers and system-designers and inspire further research in this field.« less

A Survey of Architectural Techniques for Near-Threshold Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh

Energy efficiency has now become the primary obstacle in scaling the performance of all classes of computing systems. In low-voltage computing and specifically, near-threshold voltage computing (NTC), which involves operating the transistor very close to and yet above its threshold voltage, holds the promise of providing many-fold improvement in energy efficiency. However, use of NTC also presents several challenges such as increased parametric variation, failure rate and performance loss etc. Our paper surveys several re- cent techniques which aim to offset these challenges for fully leveraging the potential of NTC. By classifying these techniques along several dimensions, we also highlightmore » their similarities and differences. Ultimately, we hope that this paper will provide insights into state-of-art NTC techniques to researchers and system-designers and inspire further research in this field.« less

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

Back-and-forth micromotion of aqueous droplets in a dc electric field.

PubMed

Kurimura, Tomo; Ichikawa, Masatoshi; Takinoue, Masahiro; Yoshikawa, Kenichi

2013-10-01

Recently, it was reported that an aqueous droplet in an oil phase exhibited rhythmic back-and-forth motion under stationary dc voltage on the order of 100 V. Here, we demonstrate that the threshold voltage for inducing such oscillation is successfully decreased to the order of 10 V through downsizing of the experimental system. Notably, the threshold electric field tends to decrease with a nonlinear scaling relationship accompanied by the downsizing. We derive a simple theoretical model to interpret the system size dependence of the threshold voltage. This model equation suggests the unique effect of additional noise, which is qualitatively characterized as a coherent resonance by an actual experiment as a kind of coherent resonance. Our result would provide insight into the construction of micrometer-sized self-commutating motors and actuators in microfluidic and micromechanical devices.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

NASA Astrophysics Data System (ADS)

Tripathi, Shweta

2016-10-01

In the present work, a two-dimensional (2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS™ device simulator to affirm and formalize the proposed device structure.

Observation of parametric instabilities in the quarter critical density region driven by the Nike KrF laser

NASA Astrophysics Data System (ADS)

Weaver, J. L.; Oh, J.; Phillips, L.; Afeyan, B.; Seely, J.; Kehne, D.; Brown, C. M.; Obenschain, S. P.; Serlin, V.; Schmitt, A. J.; Feldman, U.; Lehmberg, R. H.; Mclean, E.; Manka, C.

2013-02-01

The krypton-fluoride (KrF) laser is an attractive choice for inertial confinement fusion due to its combination of short wavelength (λ =248 nm), large bandwidth (up to 3 THz), and superior beam smoothing by induced spatial incoherence. These qualities improve the overall hydrodynamics of directly driven pellet implosions and should allow use of increased laser intensity due to higher thresholds for laser plasma instabilities when compared to frequency tripled Nd:glass lasers (λ =351 nm). Here, we report the first observations of the two-plasmon decay instability using a KrF laser. The experiments utilized the Nike laser facility to irradiate solid plastic planar targets over a range of pulse lengths (0.35 ns≤τ≤1.25 ns) and intensities (up to 2×1015 W/cm2). Variation of the laser pulse created different combinations of electron temperature and electron density scale length. The observed onset of instability growth was consistent with the expected scaling that KrF lasers have a higher intensity threshold for instabilities in the quarter critical density region.

Double layers in contactor plasmas

NASA Technical Reports Server (NTRS)

Cooke, David L.

1990-01-01

The concept of using a hollow cathode to establish a low impedance contact between a spacecraft and the ambient plasma continues to gain in popularity, and is often then referred to as a plasma contactor. A growing number of studies indicate that large contact currents can be supported with small potential difference between the contactor and the ambient plasma. Results will be presented from a simple one-dimensional spherical model that obtains potentials from the solution of Poisson's equation, and particle densities from a turning point formalism that includes particle angular momentum. The neglect of collisions and magnetic field limits the realism. However, the results illustrate the effect of double layers that can form at the interface between contactor and ambient plasmas, when there is any voltage differential between the contactor and the ambient. The I-V characteristic of this model shows the usual space charge depends upon collection when the contactor flux is lower than some threshold; independence of I from variation in V when the flux is slightly greater than that threshold, and (numerical ?) instability for excessive flux suggesting the possibility of negative resistance. Even if a real I-V characteristic does not exhibit negative resistance, flat spots or high resistance regions may still be troublesome (or useful) to the total circuit.

Generation of cyclotron harmonic waves in the ionospheric modification experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janabi, A.H.A.; Kumar, A.; Sharma, R.P.

1994-02-01

In the present paper, the parametric decay instability of the pump X-mode into electron Bernstein wave (EBW) near second harmonics of electron cyclotron frequency and IBW at different harmonics ([omega] < n[omega][sub ci];n = 2, 3, 4) is examined. Expressions are derived for homogeneous threshold, growth rate and convective threshold for this instability. Applications and relevances of the present investigation to ionospheric modification experiment in the F-layer of the ionosphere as well as during intense electron cyclotron resonance heating in the upcoming MTX tokamak have been given.

Magnetic flux pumping in 3D nonlinear magnetohydrodynamic simulations

NASA Astrophysics Data System (ADS)

Krebs, I.; Jardin, S. C.; Günter, S.; Lackner, K.; Hoelzl, M.; Strumberger, E.; Ferraro, N.

2017-10-01

A self-regulating magnetic flux pumping mechanism in tokamaks that maintains the core safety factor at q ≈1 , thus preventing sawteeth, is analyzed in nonlinear 3D magnetohydrodynamic simulations using the M3D-C1 code. In these simulations, the most important mechanism responsible for the flux pumping is that a saturated (m =1 ,n =1 ) quasi-interchange instability generates an effective negative loop voltage in the plasma center via a dynamo effect. It is shown that sawtoothing is prevented in the simulations if β is sufficiently high to provide the necessary drive for the (m =1 ,n =1 ) instability that generates the dynamo loop voltage. The necessary amount of dynamo loop voltage is determined by the tendency of the current density profile to centrally peak which, in our simulations, is controlled by the peakedness of the applied heat source profile.

Magnetic flux pumping in 3D nonlinear magnetohydrodynamic simulations

DOE PAGES

Krebs, I.; Jardin, S. C.; Gunter, S.; ...

2017-09-27

A self-regulating magnetic flux pumping mechanism in tokamaks that maintains the core safety factor at q≈1, thus preventing sawteeth, is analyzed in nonlinear 3D magnetohydrodynamic simulations using the M3D-C1 code. In these simulations, the most important mechanism responsible for the flux pumping is that a saturated (m=1,n=1) quasi-interchange instability generates an effective negative loop voltage in the plasma center via a dynamo effect. It is shown that sawtoothing is prevented in the simulations if β is sufficiently high to provide the necessary drive for the (m=1,n=1) instability that generates the dynamo loop voltage. In conclusion, the necessary amount of dynamomore » loop voltage is determined by the tendency of the current density profile to centrally peak which, in our simulations, is controlled by the peakedness of the applied heat source profile.« less

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2016-10-01

The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

Radiation tolerant back biased CMOS VLSI

NASA Technical Reports Server (NTRS)

Maki, Gary K. (Inventor); Gambles, Jody W. (Inventor); Hass, Kenneth J. (Inventor)

2003-01-01

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

Chemistry at molecular junctions: Rotation and dissociation of O2 on the Ag(110) surface induced by a scanning tunneling microscope.

PubMed

Roy, Sharani; Mujica, Vladimiro; Ratner, Mark A

2013-08-21

The scanning tunneling microscope (STM) is a fascinating tool used to perform chemical processes at the single-molecule level, including bond formation, bond breaking, and even chemical reactions. Hahn and Ho [J. Chem. Phys. 123, 214702 (2005)] performed controlled rotations and dissociations of single O2 molecules chemisorbed on the Ag(110) surface at precise bias voltages using STM. These threshold voltages were dependent on the direction of the bias voltage and the initial orientation of the chemisorbed molecule. They also observed an interesting voltage-direction-dependent and orientation-dependent pathway selectivity suggestive of mode-selective chemistry at molecular junctions, such that in one case the molecule underwent direct dissociation, whereas in the other case it underwent rotation-mediated dissociation. We present a detailed, first-principles-based theoretical study to investigate the mechanism of the tunneling-induced O2 dynamics, including the origin of the observed threshold voltages, the pathway dependence, and the rate of O2 dissociation. Results show a direct correspondence between the observed threshold voltage for a process and the activation energy for that process. The pathway selectivity arises from a competition between the voltage-modified barrier heights for rotation and dissociation, and the coupling strength of the tunneling electrons to the rotational and vibrational modes of the adsorbed molecule. Finally, we explore the "dipole" and "resonance" mechanisms of inelastic electron tunneling to elucidate the energy transfer between the tunneling electrons and chemisorbed O2.

Neurosensory findings among electricians with self-reported remaining symptoms after an electrical injury: A case series.

PubMed

Rådman, Lisa; Gunnarsson, Lars-Gunnar; Nilsagård, Ylva; Nilsson, Tohr

2016-12-01

Symptoms described in previous studies indicate that electrical injury can cause longstanding injuries to the neurosensory nerves. The aim of the present case series was to objectively assess the profile of neurosensory dysfunction in electricians in relation to high voltage or low voltage electrical injury and the "no-let-go phenomenon". Twenty-three Swedish male electricians exposed to electrical injury were studied by using a battery of clinical instruments, including quantitative sensory testing (QST). The clinical test followed a predetermined order of assessments: thermal perceptions thresholds, vibration perception thresholds, tactile gnosis (the Shape and Texture Identification test), manual dexterity (Purdue Pegboard Test), and grip strength. In addition, pain was studied by means of a questionnaire, and a colour chart was used for estimation of white fingers. The main findings in the present case series were reduced thermal perceptions thresholds, where half of the group showed abnormal values for warm thermal perception and/or cold thermal perception. Also, the tactile gnosis and manual dexterity were reduced. High voltage injury was associated with more reduced sensibility compared to those with low voltage. Neurosensory injury can be objectively assessed after an electrical injury by using QST with thermal perception thresholds. The findings are consistent with injuries to small nerve fibres. In the clinical setting thermal perception threshold is therefore recommended, in addition to tests of tactile gnosis and manual dexterity (Purdue Pegboard). Copyright © 2016 Elsevier Ltd and ISBI. All rights reserved.

Dispersion equation for electrostatic ion cyclotron instability under the effect of ionization in a dusty plasma

NASA Astrophysics Data System (ADS)

Singh, Sukhmander

2018-05-01

In the present paper we derive the plasma dispersion equation under the effect of ionization rate in a dust plasma to investigate the electrostatic ion cyclotron instability, where dust charge fluctuation is absent. It has one of the lowest threshold drift velocities among all the current-driven instabilities in isothermal plasma. The Electrostatic ion cyclotron instability in a dusty plasma containing electrons, light ions, and massive negatively charged dust grains which can be investigated both experimentally and theoretically.

Mirror Instability: Quasi-linear Effects

NASA Astrophysics Data System (ADS)

Hellinger, P.; Travnicek, P. M.; Passot, T.; Sulem, P.; Kuznetsov, E. A.

2008-12-01

Nonlinear properties of the mirror instability are investigated by direct integration of the quasi-linear diffusion equation [Shapiro and Shevchenko, 1964] near threshold. The simulation results are compared to the results of standard hybrid simulations [Califano et al., 2008] and discussed in the context of the nonlinear dynamical model by Kuznetsov et al. [2007]. References: Califano, F., P. Hellinger, E. Kuznetsov, T. Passot, P. L. Sulem, and P. M. Travnicek (2008), Nonlinear mirror mode dynamics: Simulations and modeling, J. Geophys. Res., 113, A08219, doi:10.1029/2007JA012898. Kuznetsov, E., T. Passot and P. L. Sulem (2007), Dynamical model for nonlinear mirror modes near threshold, Phys. Rev. Lett., 98, 235003 . Shapiro, V. D., and V. I. Shevchenko (1964), Quasilinear theory of instability of a plasma with an anisotropic ion velocity distribution, Sov. JETP, 18, 1109.

Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

NASA Astrophysics Data System (ADS)

Liu, H. X.; Li, J.; Tan, R. R.

2018-01-01

In2O3 nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO2 solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (Vth) of nanowire device. Both depletion mode and enhancement mode are realized, and the Vth shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for “see-through” nanoscale sensors.

Dielectric elastomer peristaltic pump module with finite deformation

NASA Astrophysics Data System (ADS)

Mao, Guoyong; Huang, Xiaoqiang; Liu, Junjie; Li, Tiefeng; Qu, Shaoxing; Yang, Wei

2015-07-01

Inspired by various peristaltic structures existing in nature, several bionic peristaltic actuators have been developed. In this study, we propose a novel dielectric elastomer peristaltic pump consisting of short tubular modules, with the saline solution as the electrodes. We investigate the performance of this soft pump module under hydraulic pressure and voltage via experiments and an analytical model based on nonlinear field theory. It is observed that the individual pump module undergoes finite deformation and may experience electromechanical instability during operations. The driving pressure and displaced volume of the peristaltic pump module can be modulated by applied voltage. The efficiency of the pump module is enhanced by alternating current voltage, which can suppress the electromechanical pull-in instability. An analytical model is developed within the framework of the nonlinear field theory, and its predictive capacity is checked by experimental observations. The effects of the prestretch, aspect ratio, and voltage on the performance of the pump modules are characterized by the analytical model. This work can guide the designs of soft active peristaltic pumps in the field of artificial organs and industrial conveying systems.

A numerical study on piezoelectric energy harvesting by combining transverse galloping and parametric instability phenomena

NASA Astrophysics Data System (ADS)

Franzini, Guilherme Rosa; Santos, Rebeca Caramêz Saraiva; Pesce, Celso Pupo

2017-12-01

This paper aims to numerically investigate the effects of parametric instability on piezoelectric energy harvesting from the transverse galloping of a square prism. A two degrees-of-freedom reduced-order model for this problem is proposed and numerically integrated. A usual quasi-steady galloping model is applied, where the transverse force coefficient is adopted as a cubic polynomial function with respect to the angle of attack. Time-histories of nondimensional prism displacement, electric voltage and power dissipated at both the dashpot and the electrical resistance are obtained as functions of the reduced velocity. Both, oscillation amplitude and electric voltage, increased with the reduced velocity for all parametric excitation conditions tested. For low values of reduced velocity, 2:1 parametric excitation enhances the electric voltage. On the other hand, for higher reduced velocities, a 1:1 parametric excitation (i.e., the same as the natural frequency) enhances both oscillation amplitude and electric voltage. It has been also found that, depending on the parametric excitation frequency, the harvested electrical power can be amplified in 70% when compared to the case under no parametric excitation.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Electrokinetic instability in microchannel ferrofluid/water co-flows

PubMed Central

Song, Le; Yu, Liandong; Zhou, Yilong; Antao, Asher Reginald; Prabhakaran, Rama Aravind; Xuan, Xiangchun

2017-01-01

Electrokinetic instability refers to unstable electric field-driven disturbance to fluid flows, which can be harnessed to promote mixing for various electrokinetic microfluidic applications. This work presents a combined numerical and experimental study of electrokinetic ferrofluid/water co-flows in microchannels of various depths. Instability waves are observed at the ferrofluid and water interface when the applied DC electric field is beyond a threshold value. They are generated by the electric body force that acts on the free charge induced by the mismatch of ferrofluid and water electric conductivities. A nonlinear depth-averaged numerical model is developed to understand and simulate the interfacial electrokinetic behaviors. It considers the top and bottom channel walls’ stabilizing effects on electrokinetic flow through the depth averaging of three-dimensional transport equations in a second-order asymptotic analysis. This model is found accurate to predict both the observed electrokinetic instability patterns and the measured threshold electric fields for ferrofluids of different concentrations in shallow microchannels. PMID:28406228

Weakly Nonlinear Analysis of Vortex Formation in a Dissipative Variant of the Gross--Pitaevskii Equation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tzou, J. C.; Kevrekidis, P. G.; Kolokolnikov, T.

2016-05-10

For a dissipative variant of the two-dimensional Gross--Pitaevskii equation with a parabolic trap under rotation, we study a symmetry breaking process that leads to the formation of vortices. The first symmetry breaking leads to the formation of many small vortices distributed uniformly near the Thomas$-$Fermi radius. The instability occurs as a result of a linear instability of a vortex-free steady state as the rotation is increased above a critical threshold. We focus on the second subsequent symmetry breaking, which occurs in the weakly nonlinear regime. At slightly above threshold, we derive a one-dimensional amplitude equation that describes the slow evolutionmore » of the envelope of the initial instability. Here, we show that the mechanism responsible for initiating vortex formation is a modulational instability of the amplitude equation. We also illustrate the role of dissipation in the symmetry breaking process. All analyses are confirmed by detailed numerical computations« less

Characteristics of edge breakdowns on Teflon samples

NASA Technical Reports Server (NTRS)

Yadlowsky, E. J.; Hazelton, R. C.; Churchill, R. J.

1980-01-01

The characteristics of electrical discharges induced on silverbacked Teflon samples irradiated by a monoenergetic electron beam have been studied under controlled laboratory conditions. Measurements of breakdown threshold voltages indicate a marked anisotropy in the electrical breakdown properties of Teflon: differences of up to 10 kV in breakdown threshold voltage are observed depending on the sample orientation. The material anisotropy can be utilized in spacecraft construction to reduce the magnitude of discharge currents.

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

2015-01-01

This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages.

PubMed

Takeishi, Shunsaku; Rant, Ulrich; Fujiwara, Tsuyoshi; Buchholz, Karin; Usuki, Tatsuya; Arinaga, Kenji; Takemoto, Kazuya; Yamaguchi, Yoshitaka; Tornow, Marc; Fujita, Shozo; Abstreiter, Gerhard; Yokoyama, Naoki

2004-03-22

DNA oligo-nucleotides, localized at Au metal electrodes in aqueous solution, are found to be released when applying a negative bias voltage to the electrode. The release was confirmed by monitoring the intensity of the fluorescence of cyanine dyes (Cy3) linked to the 5' end of the DNA. The threshold voltage of the release changes depending on the kind of linker added to the DNA 3'-terminal. The amount of released DNA depends on the duration of the voltage pulse. Using this technique, we can retain DNA at Au electrodes or Au needles, and release the desired amount of DNA at a precise location in a target. The results suggest that DNA injection into living cells is possible with this method. (c) 2004 American Institute of Physics

Collective Beam Instabilities in the Taiwan Light Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Alex W.

2002-08-12

The storage ring at Taiwan Light Source has experienced a strong collective instability since 1994. Various cures have been attempted to suppress this instability, including the use of damping antenna, tunable rf plungers, different filling patterns, and rf gap voltage modulation. So far these cures have improved the beam intensity, but the operation remains to be limited by the instability. The dominant phenomenon is the longitudinal coupled bunch instability. The major source of longitudinal impedance is from rf cavities of Doris type. The high-order modes of the cavity were numerically analyzed using a 3-D code GdfidL. The correlation of themore » observed phenomenon in user operation with high-order modes of rf cavities will be presented. Results of various attempts to suppress beam instabilities will be summarized. Proposed cures for beam instabilities will be discussed.« less

The Electric Honeycomb; an investigation of the Rose window instability

NASA Astrophysics Data System (ADS)

Niazi, Muhammad Shaheer

2017-10-01

The Rose window instability is a little-explored electrohydrodynamic instability that manifests when a layer of low-conducting oil is placed in an electric field generated by corona discharge in a point-to-plane configuration. Above a critical voltage, the instability starts as a single dimple in the oil layer right below the point electrode and subsequently evolves into a characteristic pattern of polygonal cells. In this study, we experimentally explore governing parameters that guide the instability and document geometric attributes of the characteristic cellular pattern. The driving force for the instability has been attributed to the buildup of charged ions which in turn apply an electric pressure on the oil surface. We confirm the charged surface distribution using thermal imaging and demonstrate that the instability can be locally inhibited by preventing charge buildup under an ion shadow.

The Electric Honeycomb; an investigation of the Rose window instability

PubMed Central

2017-01-01

The Rose window instability is a little-explored electrohydrodynamic instability that manifests when a layer of low-conducting oil is placed in an electric field generated by corona discharge in a point-to-plane configuration. Above a critical voltage, the instability starts as a single dimple in the oil layer right below the point electrode and subsequently evolves into a characteristic pattern of polygonal cells. In this study, we experimentally explore governing parameters that guide the instability and document geometric attributes of the characteristic cellular pattern. The driving force for the instability has been attributed to the buildup of charged ions which in turn apply an electric pressure on the oil surface. We confirm the charged surface distribution using thermal imaging and demonstrate that the instability can be locally inhibited by preventing charge buildup under an ion shadow. PMID:29134066

Collective stimulated Brillouin backscatter

NASA Astrophysics Data System (ADS)

Lushnikov, Pavel; Rose, Harvey

2007-11-01

We develop the statistical theory of linear collective stimulated Brillouin backscatter (CBSBS) in spatially and temporally incoherent laser beam. Instability is collective because it does not depend on the dynamics of isolated hot spots (speckles) of laser intensity, but rather depends on averaged laser beam intensity, optic f/#, and laser coherence time, Tc. CBSBS has a much larger threshold than a classical coherent beam's in long-scale-length high temperature plasma. It is a novel regime in which Tc is too large for applicability of well-known statistical theories (RPA) but Tc must be small enough to suppress single speckle processes such as self-focusing. Even if laser Tc is too large for a priori applicability of our theory, collective forward SBS^1, perhaps enhanced by high Z dopant, and its resultant self-induced Tc reduction, may regain the CBSBS regime. We identified convective and absolute CBSBS regimes. The threshold of convective instability is inside the typical parameter region of NIF designs. Well above incoherent threshold, the coherent instability growth rate is recovered. ^1 P.M. Lushnikov and H.A. Rose, Plasma Physics and Controlled Fusion, 48, 1501 (2006).

A Multi-agent Based Cooperative Voltage and Reactive Power Control

NASA Astrophysics Data System (ADS)

Ishida, Masato; Nagata, Takeshi; Saiki, Hiroshi; Shimada, Ikuhiko; Hatano, Ryousuke

In order to maintain system voltage within the optimal range and prevent voltage instability phenomena before they occur, a variety of phase modifying equipment is installed in optimal locations throughout the power system network and a variety of methods of voltage reactive control are employed. The proposed system divided the traditional method to control voltage and reactive power into two sub problems; “voltage control” to adjust the secondary bus voltage of substations, and “reactive power control” to adjust the primary bus voltage. In this system, two types of agents are installed in substations in order to cooperate “voltage control” and “reactive power control”. In order to verify the performance of the proposed method, it has been applied to the model network system. The results confirm that our proposed method is able to control violent fluctuations in load.

Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

PubMed

Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

2016-07-20

We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

NASA Technical Reports Server (NTRS)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Emergence of periodic order in electric-field-driven planar nematic liquid crystals: An exclusive ac effect absent in static fields

NASA Astrophysics Data System (ADS)

Krishnamurthy, K. S.; Kumar, Pramoda

2007-11-01

We report, for a nematic liquid crystal with a low conductivity anisotropy, an ac field generated transition from a uniformly planar to a periodically modulated director configuration with the wave vector parallel to the initial director. Significantly, with unblocked electrodes, this instability is not excited by dc fields. Additionally, in very low frequency square wave fields, it occurs transiently after each polarity reversal, vanishing completely during field constancy. The time of occurrence of maximum distortion after polarity reversal decreases exponentially with voltage. The time dependence of optical phase change during transient distortion is nearly Gaussian. The pattern threshold Vc is linear in f , f denoting the frequency; the critical wave number qc of the modulation scales nearly linearly as f to a peak at ˜50Hz before falling slightly thereafter. The observed Vc(f) and qc(f) characteristics differ from the predictions of the standard model (SM). The instability may be interpreted as a special case of the Carr-Helfrich distortion suppressed in static fields due to weak charge focusing and strong charge injection. Its transient nature in the low frequency regime is suggestive of the possible role of gradient flexoelectric effect in its occurrence. The study includes measurement of certain elastic and viscosity parameters relevant to the application of the SM.

Discharge Oscillations in a Permanent Magnet Cylindrical Hall-Effect Thruster

NASA Technical Reports Server (NTRS)

Polzin, K. A.; Sooby, E. S.; Raitses, Y.; Merino, E.; Fisch, N. J.

2009-01-01

Measurements of the discharge current in a cylindrical Hall thruster are presented to quantify plasma oscillations and instabilities without introducing an intrusive probe into the plasma. The time-varying component of the discharge current is measured using a current monitor that possesses a wide frequency bandwidth and the signal is Fourier transformed to yield the frequency spectra present, allowing for the identification of plasma oscillations. The data show that the discharge current oscillations become generally greater in amplitude and complexity as the voltage is increased, and are reduced in severity with increasing flow rate. The breathing mode ionization instability is identified, with frequency as a function of discharge voltage not increasing with discharge voltage as has been observed in some traditional Hall thruster geometries, but instead following a scaling similar to a large-amplitude, nonlinear oscillation mode recently predicted in for annular Hall thrusters. A transition from lower amplitude oscillations to large relative fluctuations in the oscillating discharge current is observed at low flow rates and is suppressed as the mass flow rate is increased. A second set of peaks in the frequency spectra are observed at the highest propellant flow rate tested. Possible mechanisms that might give rise to these peaks include ionization instabilities and interactions between various oscillatory modes.

Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Seungwoon; Jeong, Jaewook

2017-08-01

In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

PubMed

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Current-driven non-linear magnetodynamics in exchange-biased spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seinige, Heidi; Wang, Cheng; Tsoi, Maxim, E-mail: tsoi@physics.utexas.edu

2015-05-07

This work investigates the excitation of parametric resonance in exchange-biased spin valves (EBSVs). Using a mechanical point contact, high density dc and microwave currents were injected into the EBSV sample. Observing the reflected microwave power and the small rectification voltage that develops across the contact allows detecting the current-driven magnetodynamics not only in the bulk sample but originating exclusively from the small contact region. In addition to ferromagnetic resonance (FMR), parametric resonance at twice the natural FMR frequency was observed. In contrast to FMR, this non-linear resonance was excited only in the vicinity of the point contact where current densitiesmore » are high. Power-dependent measurements displayed a typical threshold-like behavior of parametric resonance and a broadening of the instability region with increasing power. Parametric resonance showed a linear shift as a function of applied dc bias which is consistent with the field-like spin-transfer torque induced by current on magnetic moments in EBSV.« less

Margin and sensitivity methods for security analysis of electric power systems

NASA Astrophysics Data System (ADS)

Greene, Scott L.

Reliable operation of large scale electric power networks requires that system voltages and currents stay within design limits. Operation beyond those limits can lead to equipment failures and blackouts. Security margins measure the amount by which system loads or power transfers can change before a security violation, such as an overloaded transmission line, is encountered. This thesis shows how to efficiently compute security margins defined by limiting events and instabilities, and the sensitivity of those margins with respect to assumptions, system parameters, operating policy, and transactions. Security margins to voltage collapse blackouts, oscillatory instability, generator limits, voltage constraints and line overloads are considered. The usefulness of computing the sensitivities of these margins with respect to interarea transfers, loading parameters, generator dispatch, transmission line parameters, and VAR support is established for networks as large as 1500 buses. The sensitivity formulas presented apply to a range of power system models. Conventional sensitivity formulas such as line distribution factors, outage distribution factors, participation factors and penalty factors are shown to be special cases of the general sensitivity formulas derived in this thesis. The sensitivity formulas readily accommodate sparse matrix techniques. Margin sensitivity methods are shown to work effectively for avoiding voltage collapse blackouts caused by either saddle node bifurcation of equilibria or immediate instability due to generator reactive power limits. Extremely fast contingency analysis for voltage collapse can be implemented with margin sensitivity based rankings. Interarea transfer can be limited by voltage limits, line limits, or voltage stability. The sensitivity formulas presented in this thesis apply to security margins defined by any limit criteria. A method to compute transfer margins by directly locating intermediate events reduces the total number of loadflow iterations required by each margin computation and provides sensitivity information at minimal additional cost. Estimates of the effect of simultaneous transfers on the transfer margins agree well with the exact computations for a network model derived from a portion of the U.S grid. The accuracy of the estimates over a useful range of conditions and the ease of obtaining the estimates suggest that the sensitivity computations will be of practical value.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

New Developments on the PSR Instability

NASA Astrophysics Data System (ADS)

Macek, Robert

2000-04-01

A strong, fast, transverse instability has long been observed at the Los Alamos Proton Storage Ring (PSR) where it is a limiting factor on peak intensity. Most of the characteristics and experimental data are consistent with a two-stream instability (e-p) arising from coupled oscillations of the proton beam and an electron cloud. In past operations, where the average intensity was limited by beam losses, the instability was controlled by sufficient rf voltage in the ring. The need for higher beam intensity has motivated new work to better understand and control the instability. Results will be presented from studies of the production and characteristics of the electron cloud at various locations in the ring for both stable and unstable beams and suppression of electron cloud generation by TiN coatings. Studies of additional or alternate controls include application of dual harmonic rf, damping of the instability by higher order multipoles, damping by X,Y coupling from skew quadrupoles and the use of inductive inserts to compensate longitudinal space charge forces. Use of a skew quadrupole, heated inductive inserts and higher rf voltage from a refurbished rf buncher has enabled the PSR to accumulate stable beam intensity up to 9.7 micro-Coulombs (6 E13 protons) per macropulse, a significant increase (60over the previous maximum of 6 micro-Coulombs (3.7 E13 protons). However, slow losses were rather high and must be reduced for routine operation at repetition rates of 20 Hz or higher.

Transverse mode coupling instability threshold with space charge and different wakefields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balbekov, V.

Transverse mode coupling instability of a bunch with space charge and wake field is considered in frameworks of the boxcar model. Eigenfunctions of the bunch without wake are used as the basis for solution of the equations with the wake field included. Dispersion equation for the bunch eigentunes is obtained in the form of an infinite continued fraction. It is shown that influence of space charge on the instability essentially depends on the wake sign. In particular, threshold of the negative wake increases in absolute value until the space charge tune shift is rather small, and goes to zero atmore » higher space charge. The explanation of this behavior is developed by analysis of the bunch spectrum. As a result, a comparison of the results with published articles is represented.« less

Marginal instability threshold of magnetosonic waves in kappa distributed plasma

NASA Astrophysics Data System (ADS)

Bashir, M. F.; Manzoor, M. Z.; Ilie, R.; Yoon, P. H.; Miasli, M. S.

2017-12-01

The dispersion relation of magnetosonic wave is studied taking the non-extensive anisotropic counter-streaming distribution which follows the Tsallis statistics. The effects of non-extensivity parameter (q), counter-streaming parameter (P) and the wave-particle interaction is analyzed on the growth rate and the marginal instability threshold condition of Magnetosonic (MS) mode to provide the possible explanation of different regions the Bale-diagram obtained from the solar wind data at 1 AU as represented by the temperature anisotropy ( ) vs plasma beta ( ) solar wind data plot. It is shown that the most of the regions of Bale-diagram is bounded by the MS instability under different condition and best fitted by the non-extesnive distribution. The results for the bi-kappa distribution and bi- Maxwellian distribution are also obtained in the limits and respectively.

Nonlinear modulation near the Lighthill instability threshold in 2+1 Whitham theory

NASA Astrophysics Data System (ADS)

Bridges, Thomas J.; Ratliff, Daniel J.

2018-04-01

The dispersionless Whitham modulation equations in 2+1 (two space dimensions and time) are reviewed and the instabilities identified. The modulation theory is then reformulated, near the Lighthill instability threshold, with a slow phase, moving frame and different scalings. The resulting nonlinear phase modulation equation near the Lighthill surfaces is a geometric form of the 2+1 two-way Boussinesq equation. This equation is universal in the same sense as Whitham theory. Moreover, it is dispersive, and it has a wide range of interesting multi-periodic, quasi-periodic and multi-pulse localized solutions. For illustration the theory is applied to a complex nonlinear 2+1 Klein-Gordon equation which has two Lighthill surfaces in the manifold of periodic travelling waves. This article is part of the theme issue `Stability of nonlinear waves and patterns and related topics'.

Transverse mode coupling instability threshold with space charge and different wakefields

DOE PAGES

Balbekov, V.

2017-03-10

Transverse mode coupling instability of a bunch with space charge and wake field is considered in frameworks of the boxcar model. Eigenfunctions of the bunch without wake are used as the basis for solution of the equations with the wake field included. Dispersion equation for the bunch eigentunes is obtained in the form of an infinite continued fraction. It is shown that influence of space charge on the instability essentially depends on the wake sign. In particular, threshold of the negative wake increases in absolute value until the space charge tune shift is rather small, and goes to zero atmore » higher space charge. The explanation of this behavior is developed by analysis of the bunch spectrum. As a result, a comparison of the results with published articles is represented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruenwald, J., E-mail: johannes.gruenwald@inp-greifswald.de; Fröhlich, M.

A model of the behavior of transit time instabilities in an electrostatic confinement fusion reactor is presented in this letter. It is demonstrated that different modes are excited within the spherical cathode of a Farnsworth fusor. Each of these modes is dependent on the fusion products as well as the acceleration voltage applied between the two electrodes and they couple to a resulting oscillation showing non-linear beat phenomena. This type of instability is similar to the transit time instability of electrons between two resonant surfaces but the presence of ions and the occurring fusion reactions alter the physics of thismore » instability considerably. The physics of this plasma instability is examined in detail for typical physical parameter ranges of electrostatic confinement fusion devices.« less

Mechanisms of breathing instability in patients with obstructive sleep apnea.

PubMed

Younes, Magdy; Ostrowski, Michele; Atkar, Raj; Laprairie, John; Siemens, Andrea; Hanly, Patrick

2007-12-01

The response to chemical stimuli (chemical responsiveness) and the increases in respiratory drive required for arousal (arousal threshold) and for opening the airway without arousal (effective recruitment threshold) are important determinants of ventilatory instability and, hence, severity of obstructive apnea. We measured these variables in 21 obstructive apnea patients (apnea-hypopnea index 91 +/- 24 h(-1)) while on continuous-positive-airway pressure. During sleep, pressure was intermittently reduced (dial down) to induce severe hypopneas. Dial downs were done on room air and following approximately 30 s of breathing hypercapneic and/or hypoxic mixtures, which induced a range of ventilatory stimulation before dial down. Ventilation just before dial down and flow during dial down were measured. Chemical responsiveness, estimated as the percent increase in ventilation during the 5(th) breath following administration of 6% CO(2) combined with approximately 4% desaturation, was large (187 +/- 117%). Arousal threshold, estimated as the percent increase in ventilation associated with a 50% probability of arousal, ranged from 40% to >268% and was <120% in 12/21 patients, indicating that in many patients arousal occurs with modest changes in chemical drive. Effective recruitment threshold, estimated as percent increase in pre-dial-down ventilation associated with a significant increase in dial-down flow, ranged from zero to >174% and was <110% in 12/21 patients, indicating that in many patients reflex dilatation occurs with modest increases in drive. The two thresholds were not correlated. In most OSA patients, airway patency may be maintained with only modest increases in chemical drive, but instability results because of a low arousal threshold and a brisk increase in drive following brief reduction in alveolar ventilation.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

A theoretical approach to study the optical sensitivity of a MESFET

NASA Astrophysics Data System (ADS)

Dutta, Sutanu

2018-05-01

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect transistor has been proposed for a relatively high drain field. An analytical expression of drain current of the device has been derived for a MESFET under optical illumination considering field dependent mobility of electrons across the channel. The variation of drain current with and without optical illumination has been studied with drain and gate voltages. The optical sensitivity of the drain current has been studied for different biasing conditions and gate lengths. In addition, the shift in threshold voltage of a MESFET under optical illumination is determined and optical sensitivity of the device in terms of its threshold voltage has been studied.

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

NASA Astrophysics Data System (ADS)

Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

2018-05-01

We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

Addressable inverter matrix for process and device characterization

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Sayah, H. R.

1985-01-01

The addressable inverter matrix consists of 222 inverters each accessible with the aid of a shift register. The structure has proven useful in characterizing the variability of inverter transfer curves and in diagnosing processing faults. For good 3-micron CMOS bulk inverters investigated in this study, the percent standard deviation of the inverter threshold voltage was less than one percent and the inverter gain (the slope of the inverter transfer curve at the inverter threshold voltage) was less than 3 percent. The average noise margin for the inverters was near 2 volts for a power supply voltage of 5 volts. The specific faults studied included undersize pull-down transistor widths and various open contacts in the matrix.

Symmetry breaking, phase separation and anomalous fluctuations in driven granular gas

NASA Astrophysics Data System (ADS)

Meerson, Baruch; Pöschel, Thorsten; Sasorov, Pavel V.; Schwager, Thomas

2003-03-01

What is the role of noise, caused by the discrete nature of particles, in granular dynamics? We address this question by considering a simple driven granular system: an ensemble of nearly elastically colliding hard spheres in a rectangular box, driven by a rapidly vibrating side wall at zero gravity. The elementary state of this system is a strip of enhanced particle density away from the driving wall. Granular hydrodynamics (GHD) predicts a symmetry breaking instability of this state, when the aspect ratio of the confining box exceeds a threshold value, while the average density of the gas is within a ``spinodal interval". At large aspect ratios this instability leads to phase separation similar to that in van der Waals gas. In the present work (see cond-mat/0208286) we focus on the system behavior around the threshold of the symmetry-breaking instability. We put GHD into a quantitative test by performing extensive event-driven molecular dynamic simulations in 2D. Please watch the movies of the simulations at http://summa.physik.hu-berlin.de/ kies/HD/. We found that the supercritical bifurcation curve, predicted by GHD, agrees with the simulations well below and well above the instability threshold. In a wide region of aspect ratios around the threshold the system is dominated by fluctuations. We checked that the fluctuation strength goes down when the number of particles increases. However, fluctuations remain strong (and the critical region wide) even for as many as 4 ot 10^4 particles. We conclude by suggesting that fluctuations may put a severe limitation on the validity of continuum theories of granular flow in systems with a moderately large number of particles.

Precision Voltage Referencing Techniques in MOS Technology.

NASA Astrophysics Data System (ADS)

Song, Bang-Sup

With the increasing complexity of functions on a single MOS chip, precision analog cicuits implemented in the same technology are in great demand so as to be integrated together with digital circuits. The future development of MOS data acquisition systems will require precision on-chip MOS voltage references. This dissertation will probe two most promising configurations of on-chip voltage references both in NMOS and CMOS technologies. In NMOS, an ion-implantation effect on the temperature behavior of MOS devices is investigated to identify the fundamental limiting factors of a threshold voltage difference as an NMOS voltage source. For this kind of voltage reference, the temperature stability on the order of 20ppm/(DEGREES)C is achievable with a shallow single-threshold implant and a low-current, high-body bias operation. In CMOS, a monolithic prototype bandgap reference is designed, fabricated and tested which embodies a curvature compensation and exhibits a minimized sensitivity to the process parameter variation. Experimental results imply that an average temperature stability on the order of 10ppm/(DEGREES)C with a production spread of less than 10ppm/(DEGREES)C feasible over the commercial temperature range.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

A curved electrode electrostatic actuator designed for large displacement and force in an underwater environment

NASA Astrophysics Data System (ADS)

Preetham, B. S.; Lake, Melinda A.; Hoelzle, David J.

2017-09-01

There is a need for the development of large displacement (O (10-6) m) and force (O (10-6) N) electrostatic actuators with low actuation voltages (<  ±8 V) for underwater bio-MEMS applications. In this paper, we present the design, fabrication, and characterization of a curved electrode electrostatic actuator in a clamped-clamped beam configuration meant to operate in an underwater environment. Our curved electrode actuator is unique in that it operates in a stable manner past the pull-in instability. Models based on the Rayleigh-Ritz method accurately predict the onset of static instability and the displacement versus voltage function, as validated by quasistatic experiments. We demonstrate that the actuator is capable of achieving a large peak-to-peak displacement of 19.5 µm and force of 43 µN for a low actuation voltage of less than  ±8 V and is thus appropriate for underwater bio-MEMS applications.

Control of Flowing Liquid Films by Electrostatic Fields in Space

NASA Technical Reports Server (NTRS)

Griffing, E. M.; Bankoff, S. G.; Schluter, R. A.; Miksis, M. J.

1999-01-01

The interaction of a spacially varying electric field and a flowing thin liquid film is investigated experimentally for the design of a proposed light weight space radiator. Electrodes are utilized to create a negative pressure at the bottom of a fluid film and suppress leaks if a micrometeorite punctures the radiator surface. Experimental pressure profiles under a vertical falling film, which passes under a finite electrode, show that fields of sufficient strength can be used safely in such a device. Leak stopping experiments demonstrate that leaks can be stopped with an electric field in earth gravity. A new type of electrohydrodynamic instability causes waves in the fluid film to develop into 3D cones and touch the electrode at a critical voltage. Methods previously used to calculate critical voltages for non moving films are shown to be inappropriate for this situation. The instability determines a maximum field which may be utilized in design, so the possible dependence of critical voltage on electrode length, height above the film, and fluid Reynolds number is discussed.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

Parametric instability induced by X-mode wave heating at EISCAT

NASA Astrophysics Data System (ADS)

Wang, Xiang; Zhou, Chen; Liu, Moran; Honary, Farideh; Ni, Binbin; Zhao, Zhengyu

2016-10-01

In this paper, we present results of parametric instability induced by X-mode wave heating observed by EISCAT (European Incoherent Scatter Scientific Association) radar at Tromsø, Norway. Three typical X-mode ionospheric heating experiments on 22 October 2013, 19 October 2012, and 21 February 2013 are investigated in details. Both parametric decay instability (PDI) and oscillating two-stream instability are observed during the X-mode heating period. We suggest that the full dispersion relationship of the Langmuir wave can be employed to analyze the X-mode parametric instability excitation. A modified kinetic electron distribution is proposed and analyzed, which is able to satisfy the matching condition of parametric instability excitation. Parallel electric field component of X-mode heating wave can also exceed the parametric instability excitation threshold under certain conditions.

Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides

NASA Technical Reports Server (NTRS)

Asenov, Asen; Kaya, S.

2000-01-01

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

Method, memory media and apparatus for detection of grid disconnect

DOEpatents

Ye, Zhihong [Clifton Park, NY; Du, Pengwei [Troy, NY

2008-09-23

A phase shift procedure for detecting a disconnect of a power grid from a feeder that is connected to a load and a distributed generator. The phase shift procedure compares a current phase shift of the output voltage of the distributed generator with a predetermined threshold and if greater, a command is issued for a disconnect of the distributed generator from the feeder. To extend the range of detection, the phase shift procedure is used when a power mismatch between the distributed generator and the load exceeds a threshold and either or both of an under/over frequency procedure and an under/over voltage procedure is used when any power mismatch does not exceed the threshold.

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

2002-01-01

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Isthmus sites identified by Ripple Mapping are usually anatomically stable: A novel method to guide atrial substrate ablation?

PubMed

Luther, Vishal; Qureshi, Norman; Lim, Phang Boon; Koa-Wing, Michael; Jamil-Copley, Shahnaz; Ng, Fu Siong; Whinnett, Zachary; Davies, D Wyn; Peters, Nicholas S; Kanagaratnam, Prapa; Linton, Nick

2018-03-01

Postablation reentrant ATs depend upon conducting isthmuses bordered by scar. Bipolar voltage maps highlight scar as sites of low voltage, but the voltage amplitude of an electrogram depends upon the myocardial activation sequence. Furthermore, a voltage threshold that defines atrial scar is unknown. We used Ripple Mapping (RM) to test whether these isthmuses were anatomically fixed between different activation vectors and atrial rates. We studied post-AF ablation ATs where >1 rhythm was mapped. Multipolar catheters were used with CARTO Confidense for high-density mapping. RM visualized the pattern of activation, and the voltage threshold below which no activation was seen. Isthmuses were characterized at this threshold between maps for each patient. Ten patients were studied (Map 1 was AT1; Map 2: sinus 1/10, LA paced 2/10, AT2 with reverse CS activation 3/10; AT2 CL difference 50 ± 30 ms). Point density was similar between maps (Map 1: 2,589 ± 1,330; Map 2: 2,214 ± 1,384; P  =  0.31). RM activation threshold was 0.16 ± 0.08 mV. Thirty-one isthmuses were identified in Map 1 (median 3 per map; width 27 ± 15 mm; 7 anterior; 6 roof; 8 mitral; 9 septal; 1 posterior). Importantly, 7 of 31 (23%) isthmuses were unexpectedly identified within regions without prior ablation. AT1 was treated following ablation of 11/31 (35%) isthmuses. Of the remaining 20 isthmuses, 14 of 16 isthmuses (88%) were consistent between the two maps (four were inadequately mapped). Wavefront collision caused variation in low voltage distribution in 2 of 16 (12%). The distribution of isthmuses and nonconducting tissue within the ablated left atrium, as defined by RM, appear concordant between rhythms. This could guide a substrate ablative approach. © 2018 Wiley Periodicals, Inc.

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

NASA Astrophysics Data System (ADS)

Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

2017-09-01

In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

The collisional drift mode in a partially ionized plasma. [in the F region

NASA Technical Reports Server (NTRS)

Hudson, M. K.; Kennel, C. F.

1974-01-01

The structure of the drift instability was examined in several density regimes. Let sub e be the total electron mean free path, k sub z the wave-vector component along the magnetic field, and the ratio of perpendicular ion diffusion to parallel electron streaming rates. At low densities (k sub z lambda 1) the drift mode is isothermal and should be treated kineticly. In the finite heat conduction regime square root of m/M k sub z Lambda sub 1) the drift instability threshold is reduced at low densities and increased at high densities as compared to the isothermal threshold. Finally, in the energy transfer limit (k sub z kambda sub e square root of m/M) the drift instability behaves adiabatically in a fully ionized plasma and isothermally in a partially ionized plasma for an ion-neutral to Coulomb collision frequency ratio.

Rate of Mass Loss Across the Instability Threshold for Thwaites Glacier Determines Rate of Mass Loss for Entire Basin

NASA Astrophysics Data System (ADS)

Waibel, M. S.; Hulbe, C. L.; Jackson, C. S.; Martin, D. F.

2018-01-01

Rapid change now underway on Thwaites Glacier (TG) raises concern that a threshold for unstoppable grounding line retreat has been or is about to be crossed. We use a high-resolution ice sheet model to examine the mechanics of TG self-sustained retreat by nudging the grounding line just past the point of instability. We find that by modifying surface slope in the region of the grounding line, the rate of the forcing dictates the rate of retreat, even after the external forcing is removed. Grounding line retreats that begin faster proceed more rapidly because the shorter time interval for the grounding line to erode into the grounded ice sheet means relatively thicker ice and larger driving stress upstream of the boundary. Retreat is sensitive to short-duration re-advances associated with reduced external forcing where the bathymetry allows regrounding, even when an instability is invoked.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk; Barquinha, P. M. C.

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys.more » 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.« less

Bidirectional control system for energy flow in solar powered flywheel

NASA Technical Reports Server (NTRS)

Nola, Frank J. (Inventor)

1987-01-01

An energy storage system for a spacecraft is provided which employs a solar powered flywheel arrangement including a motor/generator which, in different operating modes, drives the flywheel and is driven thereby. A control circuit, including a threshold comparator, senses the output of a solar energy converter, and when a threshold voltage is exceeded thereby indicating the availability of solar power for the spacecraft loads, activates a speed control loop including the motor/generator so as to accelerate the flywheel to a constant speed and thereby store mechanical energy, while also supplying energy from the solar converter to the loads. Under circumstances where solar energy is not available and thus the threshold voltage is not exceeded, the control circuit deactivates the speed control loop and activates a voltage control loop that provides for operation of the motor as a generator so that mechanical energy from the flywheel is converted into electrical energy for supply to the spacecraft loads.

A CMOS matrix for extracting MOSFET parameters before and after irradiation

NASA Technical Reports Server (NTRS)

Blaes, B. R.; Buehler, M. G.; Lin, Y.-S.; Hicks, K. A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Temperature measurements in an ytterbium fiber amplifier up to the mode instability threshold

NASA Astrophysics Data System (ADS)

Beier, F.; Heinzig, M.; Sattler, Bettina; Walbaum, Till; Haarlammert, N.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.

2016-03-01

We report on the measurement of the longitudinal temperature distribution in a fiber amplifier fiber during high power operation. The measurement signal of an optical frequency domain reflectometer is coupled to an ytterbium doped amplifier fiber via a wavelength division multiplexer. The longitudinal temperature distribution was examined for different pump powers with a sub mm resolution. The results show even small temperature variations induced by slight changes of the environmental conditions along the fiber. The mode instability threshold of the fiber under investigation was determined to be 480W and temperatures could be measured overall the measured output power values.

Mirror instability near the threshold: Hybrid simulations

NASA Astrophysics Data System (ADS)

Hellinger, P.; Trávníček, P.; Passot, T.; Sulem, P.; Kuznetsov, E. A.; Califano, F.

2007-12-01

Nonlinear behavior of the mirror instability near the threshold is investigated using 1-D hybrid simulations. The simulations demonstrate the presence of an early phase where quasi-linear effects dominate [ Shapiro and Shevchenko, 1964]. The quasi-linear diffusion is however not the main saturation mechanism. A second phase is observed where the mirror mode is linearly stable (the stability is evaluated using the instantaneous ion distribution function) but where the instability nevertheless continues to develop, leading to nonlinear coherent structures in the form of magnetic humps. This regime is well modeled by a nonlinear equation for the magnetic field evolution, derived from a reductive perturbative expansion of the Vlasov-Maxwell equations [ Kuznetsov et al., 2007] with a phenomenological term which represents local variations of the ion Larmor radius. In contrast with previous models where saturation is due to the cooling of a population of trapped particles, the resulting equation correctly reproduces the development of magnetic humps from an initial noise. References Kuznetsov, E., T. Passot and P. L. Sulem (2007), Dynamical model for nonlinear mirror modes near threshold, Phys. Rev. Lett., 98, 235003. Shapiro, V. D., and V. I. Shevchenko (1964), Sov. JETP, 18, 1109.

Experimental study of transient paths to the extinction in sonoluminescence.

PubMed

Urteaga, Raúl; Dellavale, Damián; Puente, Gabriela F; Bonetto, Fabián J

2008-09-01

An experimental study of the extinction threshold of single bubble sonoluminescence in an air-water system is presented. Different runs from 5% to 100% of air concentrations were performed at room pressure and temperature. The intensity of sonoluminescence (SL) and time of collapse (t(c)) with respect to the driving were measured while the acoustic pressure was linearly increased from the onset of SL until the bubble extinction. The experimental data were compared with theoretical predictions for shape and position instability thresholds. It was found that the extinction of the bubble is determined by different mechanisms depending on the air concentration. For concentrations greater than approximately 30%-40% with respect to the saturation, the parametric instability limits the maximum value of R(0) that can be reached. On the other hand, for lower concentrations, the extinction appears as a limitation in the time of collapse. Two different mechanisms emerge in this range, i.e., the Bjerknes force and the Rayleigh-Taylor instability. The bubble acoustic emission produces backreaction on the bubble itself. This effect occurs in both mechanisms and is essential for the correct prediction of the extinction threshold in the case of low air dissolved concentration.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Razavi, S. M.; Ebrahim Hosseini, Seyed; Amini Moghadam, Hamid

2011-11-01

In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We investigate the device performance focusing on breakdown voltage, threshold voltage, drain current and dc output conductance with two-dimensional and two-carrier device simulation. Our simulation results demonstrate that the channel thickness under the gate in the drain side is an important factor in the breakdown voltage. Also, the positive shift in the threshold voltage for the DS-DRG structure is larger in comparison with that for the source side-double recessed gate (SS-DRG) SiC MESFET. The saturated drain current for the DS-DRG structure is larger compared to that for the SS-DRG structure. The maximum dc output conductance in the DS-DRG structure is smaller than that in the SS-DRG structure.

Reduced distribution of threshold voltage shift in double layer NiSi2 nanocrystals for nano-floating gate memory applications.

PubMed

Choi, Sungjin; Lee, Junhyuk; Kim, Donghyoun; Oh, Seulki; Song, Wangyu; Choi, Seonjun; Choi, Eunsuk; Lee, Seung-Beck

2011-12-01

We report on the fabrication and capacitance-voltage characteristics of double layer nickel-silicide nanocrystals with Si3N4 interlayer tunnel barrier for nano-floating gate memory applications. Compared with devices using SiO2 interlayer, the use of Si3N4 interlayer separation reduced the average size (4 nm) and distribution (+/- 2.5 nm) of NiSi2 nanocrystal (NC) charge traps by more than 50% and giving a two fold increase in NC density to 2.3 x 10(12) cm(-2). The increased density and reduced NC size distribution resulted in a significantly decrease in the distribution of the device C-V characteristics. For each program voltage, the distribution of the shift in the threshold voltage was reduced by more than 50% on average to less than 0.7 V demonstrating possible multi-level-cell operation.

Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET

NASA Astrophysics Data System (ADS)

Ueda, Daiki; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

A new circuit model that provides a clear guide on designing a MOS-gated thyristor (MGT) is reported. MGT plays a significant role in achieving a steep subthreshold slope of a PN-body tied silicon-on-insulator (SOI) FET (PNBTFET), which is an SOI MOSFET merged with an MGT. The effects of design parameters on MGT and the proposed equivalent circuit model are examined to determine how to regulate the voltage response of MGT and how to suppress power dissipation. It is demonstrated that MGT with low threshold voltages, small hysteresis widths, and small power dissipation can be designed by tuning design parameters. The temperature dependence of MGT is also examined, and it is confirmed that hysteresis width decreases with the average threshold voltage kept nearly constant as temperature rises. The equivalent circuit model can be conveniently used to design low-power PNBTFET.

Transmission and reflection of charge-density wave packets in a quantum Hall edge controlled by a metal gate

NASA Astrophysics Data System (ADS)

Matsuura, Masahiro; Mano, Takaaki; Noda, Takeshi; Shibata, Naokazu; Hotta, Masahiro; Yusa, Go

2018-02-01

Quantum energy teleportation (QET) is a proposed protocol related to quantum vacuum. The edge channels in a quantum Hall system are well suited for the experimental verification of QET. For this purpose, we examine a charge-density wave packet excited and detected by capacitively coupled front gate electrodes. We observe the waveform of the charge packet, which is proportional to the time derivative of the applied square voltage wave. Further, we study the transmission and reflection behaviors of the charge-density wave packet by applying a voltage to another front gate electrode to control the path of the edge state. We show that the threshold voltages where the dominant direction is switched in either transmission or reflection for dense and sparse wave packets are different from the threshold voltage where the current stops flowing in an equilibrium state.

Negative differential conductance in doped-silicon nanoscale devices with superconducting electrodes

NASA Astrophysics Data System (ADS)

Shapovalov, A.; Shaternik, V.; Suvorov, O.; Zhitlukhina, E.; Belogolovskii, M.

2018-02-01

We present a proof-of-concept nanoelectronics device with a negative differential conductance, an attractive from the applied viewpoint functionality. The device, characterized by the decreasing current with increasing voltage in a certain voltage region above a threshold bias of about several hundred millivolts, consists of two superconducting electrodes with an amorphous 10-nm-thick silicon interlayer doped by tungsten nano-inclusions. We show that small changes in the W content radically modify the shape of the trilayer current-voltage dependence and identify sudden conductance switching at a threshold voltage as an effect of Andreev fluctuators. The latter entities are two-level systems at the superconductor-doped silicon interface where a Cooper pair tunnels from a superconductor and occupies a pair of localized electronic states. We argue that in contrast to previously proposed devices, our samples permit very large-scale integration and are practically feasible.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Pulse bifurcations and instabilities in an excitable medium: Computations in finite ring domains

NASA Astrophysics Data System (ADS)

Or-Guil, M.; Krishnan, J.; Kevrekidis, I. G.; Bär, M.

2001-10-01

We investigate the instabilities and bifurcations of traveling pulses in a model excitable medium; in particular, we discuss three different scenarios involving either the loss of stability or disappearance of stable pulses. In numerical simulations beyond the instabilities we observe replication of pulses (``backfiring'') resulting in complex periodic or spatiotemporally chaotic dynamics as well as modulated traveling pulses. We approximate the linear stability of traveling pulses through computations in a finite albeit large domain with periodic boundary conditions. The critical eigenmodes at the onset of the instabilities are related to the resulting spatiotemporal dynamics and ``act'' upon the back of the pulses. The first scenario has been analyzed earlier [M. G. Zimmermann et al., Physica D 110, 92 (1997)] for high excitability (low excitation threshold): it involves the collision of a stable pulse branch with an unstable pulse branch in a so-called T point. In the framework of traveling wave ordinary differential equations, pulses correspond to homoclinic orbits and the T point to a double heteroclinic loop. We investigate this transition for a pulse in a domain with finite length and periodic boundary conditions. Numerical evidence of the proximity of the infinite-domain T point in this setup appears in the form of two saddle node bifurcations. Alternatively, for intermediate excitation threshold, an entire cascade of saddle nodes causing a ``spiraling'' of the pulse branch appears near the parameter values corresponding to the infinite-domain T point. Backfiring appears at the first saddle-node bifurcation, which limits the existence region of stable pulses. The third case found in the model for large excitation threshold is an oscillatory instability giving rise to ``breathing,'' traveling pulses that periodically vary in width and speed.

Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; Wang, Danna; Shinobu, Onoda; Ohshima, Takeshi

2018-04-01

Radiation-induced charge trapping and interface traps in n-channel ZnO thin film transistors are characterised as a function of total dose and irradiation bias following exposure to gamma-rays. Devices were irradiated up to ∼60 kGy(SiO?) and the electrical characteristic exhibits two distinct regimes. In the first regime, up to a total dose of 40 kGy(SiO?), the threshold voltage increases positively. However, in the second regime with irradiation greater than 40 kGy(SiO?), the threshold voltage moves in the opposite direction. This reversal of threshold voltage is attributed to the influence of the radiation-induced interface and oxide- charge, in which both have opposite polarity, on the electrical performance of the transistors. In the first regime, the generation of the oxide- charge is initially greater than the density of interface traps and caused a positive shift. In the second regime, when the total doses were greater than 40 kGy(SiO?), the radiation-induced interface traps are greater than the density of oxide- charge and caused the threshold voltage to switch direction. Further, the generated interface traps contributed to the degradation of the effective channel mobility, whereas the density of traps at the grain-boundaries did not increase significantly upon irradiation. Isothermal annealing of the devices at 363 K results in a reduction in the trap density and an improvement of the effective channel mobility to ∼90% of its pre-irradiation value.

Stability of a flow down an incline with respect to two-dimensional and three-dimensional disturbances for Newtonian and non-Newtonian fluids.

PubMed

Allouche, M H; Millet, S; Botton, V; Henry, D; Ben Hadid, H; Rousset, F

2015-12-01

Squire's theorem, which states that the two-dimensional instabilities are more dangerous than the three-dimensional instabilities, is revisited here for a flow down an incline, making use of numerical stability analysis and Squire relationships when available. For flows down inclined planes, one of these Squire relationships involves the slopes of the inclines. This means that the Reynolds number associated with a two-dimensional wave can be shown to be smaller than that for an oblique wave, but this oblique wave being obtained for a larger slope. Physically speaking, this prevents the possibility to directly compare the thresholds at a given slope. The goal of the paper is then to reach a conclusion about the predominance or not of two-dimensional instabilities at a given slope, which is of practical interest for industrial or environmental applications. For a Newtonian fluid, it is shown that, for a given slope, oblique wave instabilities are never the dominant instabilities. Both the Squire relationships and the particular variations of the two-dimensional wave critical curve with regard to the inclination angle are involved in the proof of this result. For a generalized Newtonian fluid, a similar result can only be obtained for a reduced stability problem where some term connected to the perturbation of viscosity is neglected. For the general stability problem, however, no Squire relationships can be derived and the numerical stability results show that the thresholds for oblique waves can be smaller than the thresholds for two-dimensional waves at a given slope, particularly for large obliquity angles and strong shear-thinning behaviors. The conclusion is then completely different in that case: the dominant instability for a generalized Newtonian fluid flowing down an inclined plane with a given slope can be three dimensional.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

PubMed Central

Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-01-01

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. PMID:29621154

Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.

Reduction of LDI threshold by electron trapping

NASA Astrophysics Data System (ADS)

Rose, Harvey A.; Russell, David

2000-10-01

The effect of trapped electrons on the Langmuir wave decay instability (LDI), considered as a secondary instability to SRS, is twofold. First, for a given level of SRS, the Langmuir wave (LW) response, LW_0, may increase compared to that predicted by the linearized Vlasov equation because of electrons trapped by LW_0, and second, given LW_0, the threshold for LDI is lowered^* by electrons trapped in the LDI daughter wave, LW_1. When kλ D for LW0 is large, say greater than 0.30, then its harmonics, and those of LW_1, are very weakly excited and a complete catalog of nonlinear periodic solutions arising from the LDI is possible. Dependence of the nonlinear LDI threshold on kλ D for a CH plasma will be presented. *This possibility has also been discussed by D. Mourenas, Phys. Plasmas 6, 1258 (1999).

Continuation Power Flow with Variable-Step Variable-Order Nonlinear Predictor

NASA Astrophysics Data System (ADS)

Kojima, Takayuki; Mori, Hiroyuki

This paper proposes a new continuation power flow calculation method for drawing a P-V curve in power systems. The continuation power flow calculation successively evaluates power flow solutions through changing a specified value of the power flow calculation. In recent years, power system operators are quite concerned with voltage instability due to the appearance of deregulated and competitive power markets. The continuation power flow calculation plays an important role to understand the load characteristics in a sense of static voltage instability. In this paper, a new continuation power flow with a variable-step variable-order (VSVO) nonlinear predictor is proposed. The proposed method evaluates optimal predicted points confirming with the feature of P-V curves. The proposed method is successfully applied to IEEE 118-bus and IEEE 300-bus systems.

On the tertiary instability formalism of zonal flows in magnetized plasmas

NASA Astrophysics Data System (ADS)

Rath, F.; Peeters, A. G.; Buchholz, R.; Grosshauser, S. R.; Seiferling, F.; Weikl, A.

2018-05-01

This paper investigates the so-called tertiary instabilities driven by the zonal flow in gyro-kinetic tokamak core turbulence. The Kelvin Helmholtz instability is first considered within a 2D fluid model and a threshold in the zonal flow wave vector kZF>kZF,c for instability is found. This critical scale is related to the breaking of the rotational symmetry by flux-surfaces, which is incorporated into the modified adiabatic electron response. The stability of undamped Rosenbluth-Hinton zonal flows is then investigated in gyro-kinetic simulations. Absolute instability, in the sense that the threshold zonal flow amplitude tends towards zero, is found above a zonal flow wave vector kZF,cρi≈1.3 ( ρi is the ion thermal Larmor radius), which is comparable to the 2D fluid results. Large scale zonal flows with kZF

Upsets in Erased Floating Gate Cells With High-Energy Protons

DOE PAGES

Gerardin, S.; Bagatin, M.; Paccagnella, A.; ...

2017-01-01

We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively explain the experimental observations in terms of simple charge loss, at least in SLC devices. The possibility that memories exposed to high energy protons and heavy ions exhibit negative charge transfer between programmed and erased cells is investigated, although the analysis does not provide conclusive support to this hypothesis.

Experimental investigation on On-Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor

NASA Astrophysics Data System (ADS)

Amrani, Aumeur El; Es-saghiri, Abdeljabbar; Boufounas, El-Mahjoub; Lucas, Bruno

2018-06-01

The performance of a pentacene based organic thin film transistor (OTFT) with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Thus, we noticed that the onset voltage shifts toward positive voltage values with the drain voltage increase. In addition, threshold-onset differential voltage (TODV) is proposed as an original approach to estimate an averaged carrier density in pentacene. Indeed, a value of about 4.5 × 1016 cm-3 is reached at relatively high gate voltage of -50 V; this value is in good agreement with that reported in literature with other technique measurements. However, at a low applied gate voltage, the averaged pentacene carrier density remains two orders of magnitude lower; it is of about 2.8 × 1014 cm-3 and remains similar to that obtained from space charge limited current approach for low applied bias voltage of about 2.2 × 1014 cm-3. Furthermore, high IOn/IOff and IOn/IOnset current ratios of 5 × 106 and 7.5 × 107 are reported for lower drain voltage, respectively. The investigated OTFTs also showed good electrical performance including carrier mobility increasing with gate voltage; mobility values of 4.5 × 10-2 cm2 V-1 s-1 and of 4.25 × 10-2 cm2 V-1 s-1 are reached for linear and saturation regimes, respectively. These results remain enough interesting since current modulation ratio exceeds a value of 107 that is a quite important requirement than high mobility for some particular logic gate applications.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2001-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2002-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

PubMed Central

Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

2016-01-01

Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

PubMed

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-03-21

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

PubMed Central

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-01-01

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. PMID:28772679

The effect of shear flow and the density gradient on the Weibel instability growth rate in the dense plasma

NASA Astrophysics Data System (ADS)

Amininasab, S.; Sadighi-Bonabi, R.; Khodadadi Azadboni, F.

2018-02-01

Shear stress effect has been often neglected in calculation of the Weibel instability growth rate in laser-plasma interactions. In the present work, the role of the shear stress in the Weibel instability growth rate in the dense plasma with density gradient is explored. By increasing the density gradient, the shear stress threshold is increasing and the range of the propagation angles of growing modes is limited. Therefore, by increasing steps of the density gradient plasma near the relativistic electron beam-emitting region, the Weibel instability occurs at a higher stress flow. Calculations show that the minimum value of the stress rate threshold for linear polarization is greater than that of circular polarization. The Wiebel instability growth rate for linear polarization is 18.3 times circular polarization. One sees that for increasing stress and density gradient effects, there are smaller maximal growth rates for the range of the propagation angles of growing modes /π 2 < θ m i n < π and /3 π 2 < θ m i n < 2 π in circular polarized plasma and for /k c ω p < 4 in linear polarized plasma. Therefore, the shear stress and density gradient tend to stabilize the Weibel instability for /k c ω p < 4 in linear polarized plasma. Also, the shear stress and density gradient tend to stabilize the Weibel instability for the range of the propagation angles of growing modes /π 2 < θ m i n < π and /3 π 2 < θ m i n < 2 π in circular polarized plasma.

OBSAPS Data Acquisition System: Operator’s Manual and System Overview

DTIC Science & Technology

2011-05-01

Explanation of Druck Voltage to Depth Conversion used during OBSAPS (April-May’11)   25   Druck  Pressure  sensor  conversion  from...for H-91, PA Voltage, PA Current and Sonobuoy and Druck pressure sensor analog inputs. 6. Software settable thresholds for H-91, PA Voltage, PA...17. Custom dry side box for Druck Pressure Sensor supply voltage and dropping resistor. 18. Battery 9-30VDC for supplying Druck power 19. Druck PTX

Measuring Input Thresholds on an Existing Board

NASA Technical Reports Server (NTRS)

Kuperman, Igor; Gutrich, Daniel G.; Berkun, Andrew C.

2011-01-01

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

2018-03-01

We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

Design and construction of a home-made and cheaper argon arc lamp

NASA Astrophysics Data System (ADS)

Sabaeian, Mohammad; Nazari-Tarkarani, Zeinab; Ebrahimzadeh, Azadeh

2018-05-01

The authors report on the design and construction of an argon arc lamp which provides noticeably a cheaper instrument for laser and medical applications. Cesium-doped tungsten and pure tungsten rods were used, respectively, for the lamp cathode and anode. To seal the glassy tube, a 50-50 Fe-Ni alloy was successfully used as a medium to attach the tungsten electrodes to the borosilicate glass tube. Starting voltage of the lamp versus the gas pressure, operation voltage-current diagram at various gas pressures, and lamp spectrum in the various pressures were measured. A comparison was made with krypton arc lamp. The lamp operation was satisfactory without any crack or fracture during lightening operation. The results showed that the lamp-lightening threshold voltage depends linearly on the pressure and arc length in such a way that there is an increase in the voltage by raising these two parameters. We have also observed that by increasing the argon pressure, there is a shifting in emission spectrum from the ultraviolet to the visible region. Comparison with krypton arc lamp indicated that argon lamp needs a higher threshold lightening voltage.

The Hagen-Poiseuille, Plane Couette and Poiseuille Flows Linear Instability and Rogue Waves Excitation Mechanism

NASA Astrophysics Data System (ADS)

Chefranov, Sergey; Chefranov, Alexander

2016-04-01

Linear hydrodynamic stability theory for the Hagen-Poiseuille (HP) flow yields a conclusion of infinitely large threshold Reynolds number, Re, value. This contradiction to the observation data is bypassed using assumption of the HP flow instability having hard type and possible for sufficiently high-amplitude disturbances. HP flow disturbance evolution is considered by nonlinear hydrodynamic stability theory. Similar is the case of the plane Couette (PC) flow. For the plane Poiseuille (PP) flow, linear theory just quantitatively does not agree with experimental data defining the threshold Reynolds number Re= 5772 ( S. A. Orszag, 1971), more than five-fold exceeding however the value observed, Re=1080 (S. J. Davies, C. M. White, 1928). In the present work, we show that the linear stability theory conclusions for the HP and PC on stability for any Reynolds number and evidently too high threshold Reynolds number estimate for the PP flow are related with the traditional use of the disturbance representation assuming the possibility of separation of the longitudinal (along the flow direction) variable from the other spatial variables. We show that if to refuse from this traditional form, conclusions on the linear instability for the HP and PC flows may be obtained for finite Reynolds numbers (for the HP flow, for Re>704, and for the PC flow, for Re>139). Also, we fit the linear stability theory conclusion on the PP flow to the experimental data by getting an estimate of the minimal threshold Reynolds number as Re=1040. We also get agreement of the minimal threshold Reynolds number estimate for PC with the experimental data of S. Bottin, et.al., 1997, where the laminar PC flow stability threshold is Re = 150. Rogue waves excitation mechanism in oppositely directed currents due to the PC flow linear instability is discussed. Results of the new linear hydrodynamic stability theory for the HP, PP, and PC flows are published in the following papers: 1. S.G. Chefranov, A.G. Chefranov, JETP, v.119, No.2, 331, 2014 2. S.G. Chefranov, A.G. Chefranov, Doklady Physics, vol.60, No.7, 327-332, 2015 3. S.G. Chefranov, A. G. Chefranov, arXiv: 1509.08910v1 [physics.flu-dyn] 29 Sep 2015 (accepted to JETP)

Dependence of the TMCI Threshold on the Space Charge Tune Shift

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balbekov, V.

2016-07-20

Transverse mode coupling instability of a bunch with space charge is considered in frameworks of the boxcar model. Presented results demonstrate a monotonous growth of the TMCI threshold at increasing space charge tune shift, and do not support the supposition that the monotony can be violated at a higher SC.

Numerical Investigation of Three-dimensional Instability of Standing Waves

NASA Astrophysics Data System (ADS)

Zhu, Qiang; Liu, Yuming; Yue, Dick K. P.

2002-11-01

We study the three-dimensional instability of finite-amplitude standing waves under the influence of gravity using the transition matrix method. For accurate calculation of the transition matrices, we apply an efficient high-order spectral element method for nonlinear wave dynamics in complex domain. We consider two types of standing waves: (a) plane standing waves; and (b) standing waves in a circular tank. For the former, in addition to the confirmation of the side-band-like instability, we find a new three-dimensional instability for arbitrary base standing waves. The dominant component of the unstable disturbance is an oblique standing wave, with an arbitrary angle relative to the base flow, whose frequency is approximately equal to that of the base standing wave. Based on direct simulations, we confirm such a three-dimensional instability and show the occurrence of the Fermi-Pasta-Ulam recurrence phenomenon during nonlinear evolution. For the latter, we find that beyond a threshold wave steepness, the standing wave with frequency Ω becomes unstable to a small three-dimensional disturbance, which contains two dominant standing-wave components with frequencies ω1 and ω_2, provided that 2Ω ω1 + ω_2. The threshold wave steepness is found to decrease/increase as the radial/azimuthal wavenumber of the base standing wave increases. We show that the instability of standing waves in rectangular and circular tanks is caused by third-order quartet resonances between base flow and disturbance.

Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations

PubMed Central

Fernandez, Fernando R.; Malerba, Paola; White, John A.

2015-01-01

The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances. PMID:25909971

Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations.

PubMed

Fernandez, Fernando R; Malerba, Paola; White, John A

2015-04-01

The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances.

Dynamics of action potential initiation in the GABAergic thalamic reticular nucleus in vivo.

PubMed

Muñoz, Fabián; Fuentealba, Pablo

2012-01-01

Understanding the neural mechanisms of action potential generation is critical to establish the way neural circuits generate and coordinate activity. Accordingly, we investigated the dynamics of action potential initiation in the GABAergic thalamic reticular nucleus (TRN) using in vivo intracellular recordings in cats in order to preserve anatomically-intact axo-dendritic distributions and naturally-occurring spatiotemporal patterns of synaptic activity in this structure that regulates the thalamic relay to neocortex. We found a wide operational range of voltage thresholds for action potentials, mostly due to intrinsic voltage-gated conductances and not synaptic activity driven by network oscillations. Varying levels of synchronous synaptic inputs produced fast rates of membrane potential depolarization preceding the action potential onset that were associated with lower thresholds and increased excitability, consistent with TRN neurons performing as coincidence detectors. On the other hand the presence of action potentials preceding any given spike was associated with more depolarized thresholds. The phase-plane trajectory of the action potential showed somato-dendritic propagation, but no obvious axon initial segment component, prominent in other neuronal classes and allegedly responsible for the high onset speed. Overall, our results suggest that TRN neurons could flexibly integrate synaptic inputs to discharge action potentials over wide voltage ranges, and perform as coincidence detectors and temporal integrators, supported by a dynamic action potential threshold.

Eliminating electromechanical instability in dielectric elastomers by employing pre-stretch

NASA Astrophysics Data System (ADS)

Jiang, Liang; Betts, Anthony; Kennedy, David; Jerrams, Stephen

2016-07-01

Electromechanical instability (EMI) is one of most common failure modes for dielectric elastomers (DEs). It has been reported that pre-stretching a DE sample can suppress EMI due to strain stiffening taking place for larger strains and a higher elastic modulus are achieved at high stretch ratios when a voltage is applied to the material. In this work, the influence of equi-biaxial stretch on DE secant modulus was studied using VHB 4910 and silicone rubber (SR) composites containing barium titanate (BaTiO3, BT) particles and also dopamine coated BT (DP-BT) particles. The investigation of equi-biaxial deformation and EMI failure for VHB 4910 was undertaken by introducing a voltage-stretch function. The results showed that EMI was suppressed by equi-biaxial pre-stretch for all the DEs fabricated and tested. The stiffening properties of the DE materials were also studied with respect to the secant modulus. Furthermore, a voltage-induced strain of above 200% was achieved for the polyacrylate film by applying a pre-stretch ratio of 2.0 without EMI occurring. However, a maximum voltage-induced strain in the polyacrylate film of 78% was obtained by the SR/20 wt% DP-BT composite for a lower applied pre-stretch ratio of 1.6 and again EMI was eliminated.

Dynamics and Collapse in a Power System Model with Voltage Variation: The Damping Effect.

PubMed

Ma, Jinpeng; Sun, Yong; Yuan, Xiaoming; Kurths, Jürgen; Zhan, Meng

2016-01-01

Complex nonlinear phenomena are investigated in a basic power system model of the single-machine-infinite-bus (SMIB) with a synchronous generator modeled by a classical third-order differential equation including both angle dynamics and voltage dynamics, the so-called flux decay equation. In contrast, for the second-order differential equation considering the angle dynamics only, it is the classical swing equation. Similarities and differences of the dynamics generated between the third-order model and the second-order one are studied. We mainly find that, for positive damping, these two models show quite similar behavior, namely, stable fixed point, stable limit cycle, and their coexistence for different parameters. However, for negative damping, the second-order system can only collapse, whereas for the third-order model, more complicated behavior may happen, such as stable fixed point, limit cycle, quasi-periodicity, and chaos. Interesting partial collapse phenomena for angle instability only and not for voltage instability are also found here, including collapse from quasi-periodicity and from chaos etc. These findings not only provide a basic physical picture for power system dynamics in the third-order model incorporating voltage dynamics, but also enable us a deeper understanding of the complex dynamical behavior and even leading to a design of oscillation damping in electric power systems.

Thermodynamics and instability of dielectric elastomer (Conference Presentation)

NASA Astrophysics Data System (ADS)

Liu, Liwu; Liu, Yanju; Leng, Jinsong; Mu, Tong

2017-04-01

Dielectric elastomer is a kind of typical soft active material. It can deform obviously when subjected to an external voltage. When a dielectric elastomer with randomly oriented dipoles is subject to an electric field, the dipoles will rotate to and align with the electric field. The polarization of the dielectric elastomer may be saturated when the voltage is high enough. When subjected to a mechanical force, the end-to-end distance of each polymer chain, which has a finite contour length, will approach the finite value, reaching a limiting stretch. On approaching the limiting stretch, the elastomer stiffens steeply. Here, we develop a thermodynamic constitutive model of dielectric elastomers undergoing polarization saturation and strain-stiffening, and then investigate the stability (electromechanical stability, snap-through stability) and voltage induced deformation of dielectric elastomers. Analytical solution has been obtained and it reveals the marked influence of the extension limit and polarization saturation limit on its instability. The developed thermodynamic constitutive model and simulation results would be helpful in future to the research of dielectric elastomer based high-performance transducers.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Fedin, I. V.; Kutkov, I. V.

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping levelmore » makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.« less

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

NASA Astrophysics Data System (ADS)

Ding, Xingwei; Zhang, Hao; Ding, He; Zhang, Jianhua; Huang, Chuanxin; Shi, Weimin; Li, Jun; Jiang, Xueyin; Zhang, Zhilin

2014-12-01

We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4 cm2/Vs, a suitable threshold voltage of 0.8 V, a high on/off ratio of more than 107, a steep sub-threshold swing of 0.13 V/dec, and a substantially small threshold voltage shift of 0.51 V after temperature stress from 293 K to 353 K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays.

Performance analysis and simulation of vertical gallium nitride nanowire transistors

NASA Astrophysics Data System (ADS)

Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

2018-06-01

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

Circuit design advances for ultra-low power sensing platforms

NASA Astrophysics Data System (ADS)

Wieckowski, Michael; Dreslinski, Ronald G.; Mudge, Trevor; Blaauw, David; Sylvester, Dennis

2010-04-01

This paper explores the recent advances in circuit structures and design methodologies that have enabled ultra-low power sensing platforms and opened up a host of new applications. Central to this theme is the development of Near Threshold Computing (NTC) as a viable design space for low power sensing platforms. In this paradigm, the system's supply voltage is approximately equal to the threshold voltage of its transistors. Operating in this "near-threshold" region provides much of the energy savings previously demonstrated for subthreshold operation while offering more favorable performance and variability characteristics. This makes NTC applicable to a broad range of power-constrained computing segments including energy constrained sensing platforms. This paper explores the barriers to the adoption of NTC and describes current work aimed at overcoming these obstacles in the circuit design space.

Ionizing radiation detector

DOEpatents

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Interplay between protons and electrons in a firehose-unstable plasma: Particle-in-cell simulations

NASA Astrophysics Data System (ADS)

Bourdin, Philippe-A.; Maneva, Yana

2017-04-01

Kinetic plasma instabilities originating from unstable, non-Maxwellian shapes of the velocity distribution functions serve as internal degrees of freedom in plasma dynamics, and play an important role near solar current sheets and in solar wind plasmas. In the presence of strong temperature anisotropy (different thermal spreads in the velocity space with respect to the mean magnetic field), plasmas are unstable either to the firehose mode or to the mirror mode in the case of predominant parallel and perpendicular temperatures, respectively. The growth rates of these instabilities and their thresholds depend on plasma properties, such as the temperature anisotropy and the plasma beta. The physics of the temperature anisotropy-driven instabilities becomes even more diverse for various shapes of velocity distribution functions and the particle species of interest. Recent studies based on a linear instability analysis show an interplay in the firehose instability between protons and electrons when the both types of particle species are prone to unstable velocity distribution functions and their instability thresholds. In this work we perform for the first time 3D nonlinear PIC (particle-in-cell) numerical simulations to test for the linear-theory prediction of the simultaneous proton-electron firehose instability. The simulation setup allows us not only to evaluate the growth rate of each firehose instability, but also to track its nonlinear evolution and the related wave-particle interactions such as the pitch-angle scattering or saturation effects. The specialty of our simulation is that the magnetic and electric fields have a low numerical noise level by setting a sufficiently large number of super-particles into the simulation box and enhancing the statistical significance of the velocity distribution functions. We use the iPIC3D code with fully periodic boundaries under various conditions of the electron-to-proton mass ratio, which gives insight into the instability interplay at the intermediate electron-proton and on the scaling of our results towards more realistic particle settings.

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

PubMed

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-04-05

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

Rate of Mass Loss Across the Instability Threshold for Thwaites Glacier Determines Rate of Mass Loss for Entire Basin

DOE PAGES

Waibel, M. S.; Hulbe, C. L.; Jackson, C. S.; ...

2018-01-16

Rapid change now underway on Thwaites Glacier (TG) raises concern that a threshold for unstoppable grounding line retreat has been or is about to be crossed. We use a high-resolution ice sheet model to examine the mechanics of TG self-sustained retreat by nudging the grounding line just past the point of instability. We find that by modifying surface slope in the region of the grounding line, the rate of the forcing dictates the rate of retreat, even after the external forcing is removed. Grounding line retreats that begin faster proceed more rapidly because the shorter time interval for the groundingmore » line to erode into the grounded ice sheet means relatively thicker ice and larger driving stress upstream of the boundary. Retreat is sensitive to short-duration re-advances associated with reduced external forcing where the bathymetry allows regrounding, even when an instability is invoked.« less

Rate of Mass Loss Across the Instability Threshold for Thwaites Glacier Determines Rate of Mass Loss for Entire Basin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waibel, M. S.; Hulbe, C. L.; Jackson, C. S.

Rapid change now underway on Thwaites Glacier (TG) raises concern that a threshold for unstoppable grounding line retreat has been or is about to be crossed. We use a high-resolution ice sheet model to examine the mechanics of TG self-sustained retreat by nudging the grounding line just past the point of instability. We find that by modifying surface slope in the region of the grounding line, the rate of the forcing dictates the rate of retreat, even after the external forcing is removed. Grounding line retreats that begin faster proceed more rapidly because the shorter time interval for the groundingmore » line to erode into the grounded ice sheet means relatively thicker ice and larger driving stress upstream of the boundary. Retreat is sensitive to short-duration re-advances associated with reduced external forcing where the bathymetry allows regrounding, even when an instability is invoked.« less

New model for high-power electromagnetic field instability in transparent media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruzdev, V.E.; Libenson, M.N.

A model of high-power field instability is developed to describe local abrupt increasing of electromagnetic field intensity in transparent dielectric. Small local enhancement of the field amplitude is initiated by low-absorbing spherical inclusion which size is less than radiation wavelength. Exceeding threshold of optical bistability results in abrupt increasing of field amplitude in the defect that also leads to local increasing of field amplitude in the host material in the vicinity of the inclusion. Bearing in mind nonlinear dependence of refractive index of the host material on light intensity we develop a model to describe spreading of initial defect upmore » to size appropriate for the first resonant field mode to be formed. Increasing of refraction index due to nonlinear light-matter interaction and existence of high-Q eigenmodes of dielectric sphere can both cause positive feedback`s and result in field instability in the medium. Estimates are obtained of the threshold value of incident-field amplitude.« less

Anatomy of filamentary threshold switching in amorphous niobium oxide.

PubMed

Li, Shuai; Liu, Xinjun; Nandi, Sanjoy Kumar; Elliman, Robert Glen

2018-06-25

The threshold switching behaviour of Pt/NbOx/TiN devices is investigated as a function device area and NbOx film thickness and shown to reveal important insight into the structure of the self-assembled switching region. The devices exhibit combined selector-memory (1S1R) behavior after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are independent of the device area and film thickness but the threshold current (power), while independent of device area, decreases with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the TiN electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a simple circuit model, and more detailed finite element simulations. These results provide further insight into the structure and operation of NbOx threshold switching devices that have application in emerging memory and neuromorphic computing fields. © 2018 IOP Publishing Ltd.

Gyrokinetic stability of electron-positron-ion plasmas

NASA Astrophysics Data System (ADS)

Mishchenko, A.; Zocco, A.; Helander, P.; Könies, A.

2018-02-01

The gyrokinetic stability of electron-positron plasmas contaminated by an ion (proton) admixture is studied in a slab geometry. The appropriate dispersion relation is derived and solved. Stable K-modes, the universal instability, the ion-temperature-gradient-driven instability, the electron-temperature-gradient-driven instability and the shear Alfvén wave are considered. It is found that the contaminated plasma remains stable if the contamination degree is below some threshold and that the shear Alfvén wave can be present in a contaminated plasma in cases where it is absent without ion contamination.

Stress/strain changes and triggered seismicity at The Geysers, California

USGS Publications Warehouse

Gomberg, J.; Davis, S.

1996-01-01

The principal results of this study of remotely triggered seismicity in The Geysers geothermal field are the demonstration that triggering (initiation of earthquake failure) depends on a critical strain threshold and that the threshold level increases with decreasing frequency or equivalently, depends on strain rate. This threshold function derives from (1) analyses of dynamic strains associated with surface waves of the triggering earthquakes, (2) statistically measured aftershock zone dimensions, and (3) analytic functional representations of strains associated with power production and tides. The threshold is also consistent with triggering by static strain changes and implies that both static and dynamic strains may cause aftershocks. The observation that triggered seismicity probably occurs in addition to background activity also provides an important constraint on the triggering process. Assuming the physical processes underlying earthquake nucleation to be the same, Gomberg [this issue] discusses seismicity triggered by the MW 7.3 Landers earthquake, its constraints on the variability of triggering thresholds with site, and the implications of time delays between triggering and triggered earthquakes. Our results enable us to reject the hypothesis that dynamic strains simply nudge prestressed faults over a Coulomb failure threshold sooner than they would have otherwise. We interpret the rate-dependent triggering threshold as evidence of several competing processes with different time constants, the faster one(s) facilitating failure and the other(s) inhibiting it. Such competition is a common feature of theories of slip instability. All these results, not surprisingly, imply that to understand earthquake triggering one must consider not only simple failure criteria requiring exceedence of some constant threshold but also the requirements for generating instabilities.

Stress/strain changes and triggered seismicity at The Geysers, California

NASA Astrophysics Data System (ADS)

Gomberg, Joan; Davis, Scott

1996-01-01

The principal results of this study of remotely triggered seismicity in The Geysers geothermal field are the demonstration that triggering (initiation of earthquake failure) depends on a critical strain threshold and that the threshold level increases with decreasing frequency, or, equivalently, depends on strain rate. This threshold function derives from (1) analyses of dynamic strains associated with surface waves of the triggering earthquakes, (2) statistically measured aftershock zone dimensions, and (3) analytic functional representations of strains associated with power production and tides. The threshold is also consistent with triggering by static strain changes and implies that both static and dynamic strains may cause aftershocks. The observation that triggered seismicity probably occurs in addition to background activity also provides an important constraint on the triggering process. Assuming the physical processes underlying earthquake nucleation to be the same, Gomberg [this issue] discusses seismicity triggered by the MW 7.3 Landers earthquake, its constraints on the variability of triggering thresholds with site, and the implications of time delays between triggering and triggered earthquakes. Our results enable us to reject the hypothesis that dynamic strains simply nudge prestressed faults over a Coulomb failure threshold sooner than they would have otherwise. We interpret the rate-dependent triggering threshold as evidence of several competing processes with different time constants, the faster one(s) facilitating failure and the other(s) inhibiting it. Such competition is a common feature of theories of slip instability. All these results, not surprisingly, imply that to understand earthquake triggering one must consider not only simple failure criteria requiring exceedence of some constant threshold but also the requirements for generating instabilities.

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death

NASA Astrophysics Data System (ADS)

Gómez-Rojas, A.; Halevi, P.

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death.

PubMed

Gómez-Rojas, A; Halevi, P

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2016-05-01

Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

PubMed

Geier, Michael L; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R; Hersam, Mark C

2016-07-13

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Using Stream Classification to Prioritize Riparian Rehabilitation After Extreme Events

Treesearch

Sherman Swanson

1989-01-01

Historic use of many stream riparian areas and associated watersheds has impaired the capacity of riparian vegetation and floodplains to reduce stream energy and trap sediments. As low-gradient streams with erodible banks increase in width and change their pattern, they approach a threshold of instability. Once a stream exceeds a threshold, it must proceed through a...

Photocurrent Suppression of Transparent Organic Thin Film Transistors

NASA Astrophysics Data System (ADS)

Chuang, Chiao-Shun; Tsai, Shu-Ting; Lin, Yung-Sheng; Chen, Fang-Chung; Shieh, Hang-Ping D.

2007-12-01

Organic thin-film transistors (OTFTs) with high transmittance and low photosensitivity have been demonstrated. By using titanium dioxide nanoparticles as the additives in the polymer gate insulators, the level of device photoresponse has been reduced. The device shows simultaneously a high transparence and a minimal threshold voltage shift under white light illumination. It is inferred that the localized energy levels deep in the energy gap of pentacene behave as the recombination centers, enhancing substantially the recombination process in the conducting channel of the OTFTs. Therefore, the electron trapping is relieved and the shift of threshold voltage is reduced upon illumination.

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Diggins, Z. J.; Mahatme, N. N.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Zhang, H.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

The single-event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. An overall increase in SEU cross section versus temperature is observed at relatively high supply voltages. However, at low supply voltages, there is a threshold temperature beyond which the SEU cross section decreases with further increases in temperature. Single-event transient induced errors in flip-flops also increase versus temperature at relatively high supply voltages and are more sensitive to temperature variation than those caused by single-event upsets.

CNFET-based voltage rectifier circuit for biomedical implantable applications

NASA Astrophysics Data System (ADS)

Tu, Yonggen; Qian, Libo; Xia, Yinshui

2017-02-01

Carbon nanotube field effect transistor (CNFET) shows lower threshold voltage and smaller leakage current in comparison to its CMOS counterpart. In this paper, two kinds of CNFET-based rectifiers, full-wave rectifiers and voltage doubler rectifiers are presented for biomedical implantable applications. Based on the standard 32 nm CNFET model, the electrical performance of CNFET rectifiers is analyzed and compared. Simulation results show the voltage conversion efficiency (VCE) and power conversion efficiency (PCE) achieve 70.82% and 72.49% for CNFET full-wave rectifiers and 56.60% and 61.17% for CNFET voltage double rectifiers at typical 1.0 V input voltage excitation, which are higher than that of CMOS design. Moreover, considering the controllable property of CNFET threshold voltage, the effect of various design parameters on the electrical performance is investigated. It is observed that the VCE and PCE of CNFET rectifier increase with increasing CNT diameter and number of tubes. The proposed results would provide some guidelines for design and optimization of CNFET-based rectifier circuits. Project supported by the National Natural Science Foundation of China (Nos. 61131001, 61404077, 61571248), the Science and Technology Fund of Zhejiang Province (No. 2015C31090), the Natural Science Foundation of Ningbo (No. 2014A610147), State Key Laboratory of ASIC & System (No. 2015KF006) and the K. C. Wong Magna Fund in Ningbo University.

A randomized trial of the effect of automated ventricular capture on device longevity and threshold measurement in pacemaker patients.

PubMed

Koplan, Bruce A; Gilligan, David M; Nguyen, Luc S; Lau, Theodore K; Thackeray, Lisa M; Berg, Kellie Chase

2008-11-01

An automatic capture (AC) algorithm adjusts ventricular pacing output to capture the ventricle while optimizing output to 0.5 V above threshold. AC maintains this output and confirms capture on a beat-to-beat basis in bipolar and unipolar pacing and sensing. To assess the AC algorithm and its impact on device longevity. Patients implanted with a pacemaker were randomized 1:1 to have the AC feature on or off for 12 months. Two threshold tests were conducted at each visit- automatic threshold and manual threshold. Average ventricular voltage output and projected device longevity were compared between AC on and off using nonparametric tests. Nine hundred ten patients were enrolled and underwent device implantation. Average ventricular voltage output was 1.6 V for the AC on arm (n = 444) and 3.1 V for the AC off arm (n = 446) (P < 0.001). Projected device longevity was 10.3 years for AC on and 8.9 years for AC off (P < 0.0001), or a 16% increase in longevity for AC on. The proportion of patients in whom there was a difference between automatic threshold and manual threshold of

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

NASA Astrophysics Data System (ADS)

Meneghesso, G.; Meneghini, M.; Rossetto, I.; Canato, E.; Bartholomeus, J.; De Santi, C.; Trivellin, N.; Zanoni, E.

2017-02-01

GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase. For this reason, studying the stability and reliability of these devices under high stress conditions is of high importance. This paper reports on our most recent results on the field- and time-dependent degradation of GaN-HEMTs with p-GaN gate submitted to stress with positive gate bias. Based on combined step-stress experiments, constant voltage stress and electroluminescence testing we demonstrated that: (i) when submitted to high/positive gate stress, the transistors may show a negative threshold voltage shift, that is ascribed to the injection of holes from the gate metal towards the p-GaN/AlGaN interface; (ii) in a step-stress experiment, the analyzed commercial devices fail at gate voltages higher than 9-10 V, due to the extremely high electric field over the p-GaN/AlGaN stack; (iii) constant voltage stress tests indicate that the failure is also time-dependent and Weibull distributed. The several processes that can explain the time-dependent failure are discussed in the following.

Turing instability in reaction-diffusion models on complex networks

NASA Astrophysics Data System (ADS)

Ide, Yusuke; Izuhara, Hirofumi; Machida, Takuya

2016-09-01

In this paper, the Turing instability in reaction-diffusion models defined on complex networks is studied. Here, we focus on three types of models which generate complex networks, i.e. the Erdős-Rényi, the Watts-Strogatz, and the threshold network models. From analysis of the Laplacian matrices of graphs generated by these models, we numerically reveal that stable and unstable regions of a homogeneous steady state on the parameter space of two diffusion coefficients completely differ, depending on the network architecture. In addition, we theoretically discuss the stable and unstable regions in the cases of regular enhanced ring lattices which include regular circles, and networks generated by the threshold network model when the number of vertices is large enough.

Resonant tunneling via a Ru-dye complex using a nanoparticle bridge junction.

PubMed

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-15

Nonlinear current-voltage (I-V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru-dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I-V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I-V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

Biased-probe-induced water ion injection into amorphous polymers investigated by electric force microscopy

NASA Astrophysics Data System (ADS)

Knorr, Nikolaus; Rosselli, Silvia; Miteva, Tzenka; Nelles, Gabriele

2009-06-01

Although charging of insulators by atomic force microscopy (AFM) has found widespread interest, often with data storage or nanoxerography in mind, less attention has been paid to the charging mechanism and the nature of the charge. Here we present a systematic study on charging of amorphous polymer films by voltage pulses applied to conducting AFM probes. We find a quadratic space charge limited current law of Kelvin probe force microscopy and electrostatic force microscopy peak volumes in pulse height, offset by a threshold voltage, and a power law in pulse width of positive exponents smaller than one. We interpret the results by a charging mechanism of injection and surface near accumulation of aqueous ions stemming from field induced water adsorption, with threshold voltages linked to the water affinities of the polymers.

Resonant tunneling via a Ru–dye complex using a nanoparticle bridge junction

NASA Astrophysics Data System (ADS)

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-01

Nonlinear current–voltage (I–V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru–dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I–V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I–V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

The Exchange-Correlation Field Effect over the Magnetoacoustic-Gravitational Instability in Plasmas

NASA Astrophysics Data System (ADS)

Rasheed, A.; Jamil, M.; Jung, Young-Dae; Sahar, A.; Asif, M.

2017-09-01

Jeans instability with magnetosonic perturbations is discussed in quantum dusty magnetoplasmas. The quantum and smaller thermal effects are associated only with electrons. The quantum characteristics include exchange-correlation potential, recoil effect, and Fermi degenerate pressure. The multifluid model of plasmas is used for the analytical study of this problem. The significant contribution of electron exchange is noticed on the threshold value of wave vector and Jeans instability. The presence of electron exchange and correlation effects reduce the time to stabilise the phenomenon of self-gravitational collapse of massive species. The results of Jeans instability by magnetosonic perturbations at quantum scale help to disclose the details of the self-gravitating dusty magnetoplasma systems.

Hysteresis-Free Carbon Nanotube Field-Effect Transistors.

PubMed

Park, Rebecca S; Hills, Gage; Sohn, Joon; Mitra, Subhasish; Shulaker, Max M; Wong, H-S Philip

2017-05-23

While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.

Time varying voltage combustion control and diagnostics sensor

DOEpatents

Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

2011-04-19

A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

Dynamics of Action Potential Initiation in the GABAergic Thalamic Reticular Nucleus In Vivo

PubMed Central

Muñoz, Fabián; Fuentealba, Pablo

2012-01-01

Understanding the neural mechanisms of action potential generation is critical to establish the way neural circuits generate and coordinate activity. Accordingly, we investigated the dynamics of action potential initiation in the GABAergic thalamic reticular nucleus (TRN) using in vivo intracellular recordings in cats in order to preserve anatomically-intact axo-dendritic distributions and naturally-occurring spatiotemporal patterns of synaptic activity in this structure that regulates the thalamic relay to neocortex. We found a wide operational range of voltage thresholds for action potentials, mostly due to intrinsic voltage-gated conductances and not synaptic activity driven by network oscillations. Varying levels of synchronous synaptic inputs produced fast rates of membrane potential depolarization preceding the action potential onset that were associated with lower thresholds and increased excitability, consistent with TRN neurons performing as coincidence detectors. On the other hand the presence of action potentials preceding any given spike was associated with more depolarized thresholds. The phase-plane trajectory of the action potential showed somato-dendritic propagation, but no obvious axon initial segment component, prominent in other neuronal classes and allegedly responsible for the high onset speed. Overall, our results suggest that TRN neurons could flexibly integrate synaptic inputs to discharge action potentials over wide voltage ranges, and perform as coincidence detectors and temporal integrators, supported by a dynamic action potential threshold. PMID:22279567

Investigations of the internal wave characteristics and saturation degree in the Earth's atmosphere by using radiosonde measurements of wind and temperature and their applications to the RO wave studies

NASA Astrophysics Data System (ADS)

Kirillovich, Ivan; Gubenko, Vladimir; Pavelyev, Alexander

Internal gravity waves (IGWs) affect the structure and circulation of the Earth’s atmosphere by transporting energy and momentum upward from lower atmosphere. Observations of the temperature and wind velocity fluctuations in the middle atmosphere have shown that wave amplitudes grow with increasing altitude, however, no quickly enough in order to correspond to amplitude growth due to exponential decrease of density in the absence of energy dissipation. The theory of saturated IGWs explains such rate of the wave amplitude growth in the following way: any wave amplitude in excess of the threshold value will lead to instability and the production of turbulence that acts to prevent further growth of the wave amplitude. The mechanisms that contribute most to the dissipation and saturation of the dominant IGW motions in the atmosphere are thought to be the dynamical (shear) and convective instability. For high-frequency waves, the threshold amplitude required to achieve shear instability is virtually identical to that required for convective instability. But for low-frequency IGWs, the shear instability threshold falls well below that necessary for convective instability. The knowledge of actual and threshold wave amplitudes is important when the effect of IGWs on the background atmosphere is to be assessed. The internal wave saturation assumption plays the key role for radio occultation (RO) investigations of IGWs in planetary atmospheres [Gubenko et al., 2008, 2011, 2012], therefore a radiosonde study of wave saturation processes in the Earth’s atmosphere is actual task. The results of determination of the actual and threshold amplitudes, saturation degree and other characteristics for identified IGWs in the Earth’s atmosphere found from high-resolution radiosonde measurements SPARC (http://www.sparc.sunysb.edu/) of horizontal wind and temperature are presented. The usefulness of these observations in conjunction with RO studies of IGWs is discussed. The work was carried out under partial support of the RFBR grant 13-02-00526-a and Program 22 of the RAS Presidium. References. Gubenko V.N., Pavelyev A.G., Andreev V.E. Determination of the intrinsic frequency and other wave parameters from a single vertical temperature or density profile measurement // J. Geophys. Res. 2008. V. 113. No.D08109, doi:10.1029/2007JD008920. Gubenko V.N., Pavelyev A.G., Salimzyanov R.R., Pavelyev A.A. Reconstruction of internal gravity wave parameters from radio occultation retrievals of vertical temperature profiles in the Earth’s atmosphere // Atmos. Meas. Tech. 2011. V. 4. No.10. P. 2153-2162, doi:10.5194/amt-4-2153-2011. Gubenko V.N., Pavelyev A.G., Salimzyanov R.R., Andreev V.E. A method for determination of internal gravity wave parameters from a vertical temperature or density profile measurement in the Earth’s atmosphere // Cosmic Res. 2012. V. 50. No.1. P. 21-31, doi: 10.1134/S0010952512010029.

Transistor biased amplifier minimizes diode discriminator threshold attenuation

NASA Technical Reports Server (NTRS)

Larsen, R. N.

1967-01-01

Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Watanabe, Takeshi; Tada, Keisuke; Yasuno, Satoshi; Oji, Hiroshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro

2016-03-01

The effect of gate voltage on electric potential in a pentacene (PEN) layer was studied by hard X-ray photoelectron spectroscopy under a bias voltage. It was observed that applying a negative gate voltage substantially increases the width of a C 1s peak. This suggested that injected and accumulated carriers in an organic thin film transistor channel modified the potential depth profile in PEN. It was also observed that the C 1s kinetic energy tends to increase monotonically with threshold voltage.

Systems and methods for initializing a charging system

DOEpatents

Ransom, Ray M.; Perisic, Milun; Kajouke, Lateef A.

2014-09-09

Systems and methods are provided for initiating a charging system. The method, for example, may include, but is not limited to, providing, by the charging system, an incrementally increasing voltage to a battery up to a first predetermined threshold while the energy conversion module has a zero-percent duty cycle, providing, by the charging system, an incrementally increasing voltage to the battery from an initial voltage level of the battery up to a peak voltage of a voltage source while the energy conversion module has a zero-percent duty cycle, and providing, by the charging system, an incrementally increasing voltage to the battery by incrementally increasing the duty cycle of the energy conversion module.

Ground potential rise monitor

DOEpatents

Allen, Zachery W [Mandan, ND; Zevenbergen, Gary A [Arvada, CO

2012-04-03

A device and method for detecting ground potential rise (GPR) comprising positioning a first electrode and a second electrode at a distance from each other into the earth. The voltage of the first electrode and second electrode is attenuated by an attenuation factor creating an attenuated voltage. The true RMS voltage of the attenuated voltage is determined creating an attenuated true RMS voltage. The attenuated true RMS voltage is then multiplied by the attenuation factor creating a calculated true RMS voltage. If the calculated true RMS voltage is greater than a first predetermined voltage threshold, a first alarm is enabled at a local location. If user input is received at a remote location acknowledging the first alarm, a first alarm acknowledgment signal is transmitted. The first alarm acknowledgment signal is then received at which time the first alarm is disabled.

Analytical interpretation of arc instabilities in a DC plasma spray torch: the role of pressure

NASA Astrophysics Data System (ADS)

Rat, V.; Coudert, J. F.

2016-06-01

Arc instabilities in a plasma spray torch are investigated experimentally and theoretically thanks to a linear simplified analytical model. The different parameters that determine the useful properties of the plasma jet at the torch exit, such as specific enthalpy and speed, but also pressure inside the torch and time variations of the flow rate are studied. The work is particularly focused on the link between the recorded arc voltage and the pressure in the cathode cavity. A frequency analysis of the recorded voltage and pressure allows the separation of different contributions following their spectral characteristics and highlights a resonance effect due to Helmholtz oscillations; these oscillations are responsible for the large amplitude fluctuations of all the parameters investigated. The influence of heat transfer, friction forces and residence time of the plasma in the nozzle are taken into account, thanks to different characteristics’ times. The volume of the cathode cavity in which the cold gas is stored before entering the arc region appears to be of prime importance for the dynamics of instabilities, particularly for the non-intuitive effect that induces flow-rate fluctuations in spite of the fact that the torch is fed at a constant flow rate.

Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chida, K.; Yamauchi, Y.; Arakawa, T.

2013-12-04

We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

Laminar Instability and Transition on the X-51A

DTIC Science & Technology

2009-08-01

AIM15 controller. Surface thermocouples are affixed to the contraction by hose clamps and are used by the controllers to determine when each heater...installed in the model. One 20- gauge, braided , high-voltage wire is soldered to the inner electrode. This wire then passes through the model, angle...and another 20-gauge, braided , high-voltage wire leading from the sting to the ground of the glow electronics. From the back of the sting to the glow

Interfacial fields in organic field-effect transistors and sensors

NASA Astrophysics Data System (ADS)

Dawidczyk, Thomas J.

Organic electronics are currently being commercialized and present a viable alternative to conventional electronics. These organic materials offer the ability to chemically manipulate the molecule, allowing for more facile mass processing techniques, which in turn reduces the cost. One application where organic semiconductors (OSCs) are being investigated is sensors. This work evaluates an assortment of n- and p-channel semiconductors as organic field-effect transistor (OFET) sensors. The sensor responses to dinitrotoluene (DNT) vapor and solid along with trinitrotoluene (TNT) solid were studied. Different semiconductor materials give different magnitude and direction of electrical current response upon exposure to DNT. Additional OFET parameters---mobility and threshold voltage---further refine the response to the DNT with each OFET sensor requiring a certain gate voltage for an optimized response to the vapor. The pattern of responses has sufficient diversity to distinguish DNT from other vapors. To effectively use these OFET sensors in a circuit, the threshold voltage needs to be tuned for each transistor to increase the efficiency of the circuit and maximize the sensor response. The threshold voltage can be altered by embedding charges into the dielectric layer of the OFET. To study the quantity and energy of charges needed to alter the threshold voltage, charge carriers were injected into polystyrene (PS) and investigated with scanning Kelvin probe microscopy (SKPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using SKPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method. The process was further refined to create lateral heterojunctions that were actual working OFETs, consisting of a PS or poly (3-trifluoro)styrene (F-PS) gate dielectric and a pentacene OSC. The charge storage inside the dielectric was visualized with SKPM, correlated to a threshold voltage shift in the transistor operation, and related to bias stress as well. The SKPM method allows the dielectric/OSC interface of the OFET to be visualized without any alteration of the OFET. Furthermore, this technique allows for the observation of charge distribution between the two dielectric interfaces, PS and F-PS. The SKPM is used to visualize the charge from conventional gate biasing and also as a result of embedding charges deliberately into the dielectric to shift the threshold voltage. Conventional gate biasing shows considerable residual charge in the PS dielectric, which results in gate bias stress. Gate bias stress is one of the major hurdles left in the commercialization of OFETs. To prevent this bias stress, additives of different energy levels were inserted into the dielectric to limit the gate bias stress. Additionally, the dielectrics were pre-charged to try and prevent further bias stress. Neither pre-charging the dielectric or the addition of additive has been used in gate bias prevention, but both methods offer improved resistance to gate bias stress, and help to further refine the dielectric design.

Jeans instability with exchange effects in quantum dusty magnetoplasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jamil, M., E-mail: jamil.gcu@gmail.com; Rasheed, A.; Rozina, Ch.

2015-08-15

Jeans instability is examined in magnetized quantum dusty plasmas using the quantum hydrodynamic model. The quantum effects are considered via exchange-correlation potential, recoil effect, and Fermi degenerate pressure, in addition to thermal effects of plasma species. It is found that the electron exchange and correlation potential have significant effects over the threshold value of wave vector and Jeans instability. The presence of electron exchange and correlation effect shortens the time of dust sound that comparatively stabilizes the self gravitational collapse. The results at quantum scale are helpful in understanding the collapse of the self-gravitating dusty plasma systems.

Contributions of adaptation currents to dynamic spike threshold on slow timescales: Biophysical insights from conductance-based models

NASA Astrophysics Data System (ADS)

Yi, Guosheng; Wang, Jiang; Wei, Xile; Deng, Bin; Li, Huiyan; Che, Yanqiu

2017-06-01

Spike-frequency adaptation (SFA) mediated by various adaptation currents, such as voltage-gated K+ current (IM), Ca2+-gated K+ current (IAHP), or Na+-activated K+ current (IKNa), exists in many types of neurons, which has been shown to effectively shape their information transmission properties on slow timescales. Here we use conductance-based models to investigate how the activation of three adaptation currents regulates the threshold voltage for action potential (AP) initiation during the course of SFA. It is observed that the spike threshold gets depolarized and the rate of membrane depolarization (dV/dt) preceding AP is reduced as adaptation currents reduce firing rate. It is indicated that the presence of inhibitory adaptation currents enables the neuron to generate a dynamic threshold inversely correlated with preceding dV/dt on slower timescales than fast dynamics of AP generation. By analyzing the interactions of ionic currents at subthreshold potentials, we find that the activation of adaptation currents increase the outward level of net membrane current prior to AP initiation, which antagonizes inward Na+ to result in a depolarized threshold and lower dV/dt from one AP to the next. Our simulations demonstrate that the threshold dynamics on slow timescales is a secondary effect caused by the activation of adaptation currents. These findings have provided a biophysical interpretation of the relationship between adaptation currents and spike threshold.

Radiation-induced genomic instability: radiation quality and dose response

NASA Technical Reports Server (NTRS)

Smith, Leslie E.; Nagar, Shruti; Kim, Grace J.; Morgan, William F.

2003-01-01

Genomic instability is a term used to describe a phenomenon that results in the accumulation of multiple changes required to convert a stable genome of a normal cell to an unstable genome characteristic of a tumor. There has been considerable recent debate concerning the importance of genomic instability in human cancer and its temporal occurrence in the carcinogenic process. Radiation is capable of inducing genomic instability in mammalian cells and instability is thought to be the driving force responsible for radiation carcinogenesis. Genomic instability is characterized by a large collection of diverse endpoints that include large-scale chromosomal rearrangements and aberrations, amplification of genetic material, aneuploidy, micronucleus formation, microsatellite instability, and gene mutation. The capacity of radiation to induce genomic instability depends to a large extent on radiation quality or linear energy transfer (LET) and dose. There appears to be a low dose threshold effect with low LET, beyond which no additional genomic instability is induced. Low doses of both high and low LET radiation are capable of inducing this phenomenon. This report reviews data concerning dose rate effects of high and low LET radiation and their capacity to induce genomic instability assayed by chromosomal aberrations, delayed lethal mutations, micronuclei and apoptosis.

Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

NASA Astrophysics Data System (ADS)

Park, Jae Hyun; Chang, Tae-sig; Kim, Minsuk; Woo, Sola; Kim, Sangsig

2018-01-01

In this study, we investigate threshold voltage (VTH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced VTH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (VTH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

PubMed

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

NASA Astrophysics Data System (ADS)

O'Uchi, Shin-Ichi; Masahara, Meishoku; Sakamoto, Kunihiro; Endo, Kazuhiko; Liu, Yungxun; Matsukawa, Takashi; Sekigawa, Toshihiro; Koike, Hanpei; Suzuki, Eiichi

A Flex-Pass-Gate SRAM, i.e. a fin-type-field-effect-transistor- (FinFET-) based SRAM, is proposed to enhance noise margin during both read and write operations. In its cell, the flip-flop is composed of usual three-terminal- (3T-) FinFETs while pass gates are composed of four-terminal- (4T-) FinFETs. The 4T-FinFETs enable to adopt a dynamic threshold-voltage control in the pass gates. During a write operation, the threshold voltage of the pass gates is lowered to enhance the writing speed and stability. During the read operation, on the other hand, the threshold voltage is raised to enhance the static noise margin. An asymmetric-oxide 4T-FinFET is helpful to manage the leakage current through the pass gate. In this paper, a design strategy of the pass gate with an asymmetric gate oxide is considered, and a TCAD-based Monte Carlo simulation reveals that the Flex-Pass-Gate SRAM based on that design strategy is expected to be effective in half-pitch 32-nm technology for low-standby-power (LSTP) applications, even taking into account the variability in the device performance.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

2012-02-01

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. We deposited the ZnO channel layer by PA-ALD at 100 or 300 °C, and fabricated TFTs. The transfer characteristic of the 300 °C-deposited ZnO TFT exhibited high mobility (5.7 cm2 V-1 s-1), although the threshold voltage largely shifted toward the negative (-16 V). Furthermore, we deposited Al2O3 thin film as a gate insulator by PA-ALD at 100 °C for the low-temperature TFT fabrication process. In the case of ZnO TFTs with the Al2O3 gate insulator, the shift of the threshold voltage improved (-0.1 V). This improvement of the negative shift seems to be due to the negative charges of the Al2O3 film deposited by PA-ALD. On the basis of the experimental results, we confirmed that the threshold voltage of ZnO TFTs is controlled by PA-ALD for the deposition of the gate insulator.

Filamentation instability of magnetosonic waves in the solar wind environment

NASA Technical Reports Server (NTRS)

Kuo, S. P.; Lee, M. C.

1989-01-01

Intense magnetosonic waves, originally propagating at the right angle with the interplanetary magnetic field, can excite a purely growing mode along the interplanetary magnetic field together with two symmetric magnetosonic sidebands propagating obliquely across the magnetic field. This instability process leads to the filamentation of the magnetosonic pump waves. These two excited magnetosonic sideband modes propagate together perpendicularly across the magnetic field and, meanwhile, form a standing wave pattern along the magnetic field. The thresholds of this filamentation instability can be exceeded in the solar wind environment. It is predicted that the density fluctuations produced by the filamentation instability along the interplanetary magnetic field have wavelengths greater than, at least, a few earth radii. The polarization of the obliquely propagating magnetosonic waves excited by the filamentation instability is determined by the characteristics of the magnetosonic pump waves and the environmental plasmas.

Zonostrophic instability driven by discrete particle noise

DOE Office of Scientific and Technical Information (OSTI.GOV)

St-Onge, D. A.; Krommes, J. A.

The consequences of discrete particle noise for a system possessing a possibly unstable collective mode are discussed. It is argued that a zonostrophic instability (of homogeneous turbulence to the formation of zonal flows) occurs just below the threshold for linear instability. The scenario provides a new interpretation of the random forcing that is ubiquitously invoked in stochastic models such as the second-order cumulant expansion or stochastic structural instability theory; neither intrinsic turbulence nor coupling to extrinsic turbulence is required. A representative calculation of the zonostrophic neutral curve is made for a simple two-field model of toroidal ion-temperature-gradient-driven modes. To themore » extent that the damping of zonal flows is controlled by the ion-ion collision rate, the point of zonostrophic instability is independent of that rate. Published by AIP Publishing.« less

Zonostrophic instability driven by discrete particle noise

DOE PAGES

St-Onge, D. A.; Krommes, J. A.

2017-04-01

The consequences of discrete particle noise for a system possessing a possibly unstable collective mode are discussed. It is argued that a zonostrophic instability (of homogeneous turbulence to the formation of zonal flows) occurs just below the threshold for linear instability. The scenario provides a new interpretation of the random forcing that is ubiquitously invoked in stochastic models such as the second-order cumulant expansion or stochastic structural instability theory; neither intrinsic turbulence nor coupling to extrinsic turbulence is required. A representative calculation of the zonostrophic neutral curve is made for a simple two-field model of toroidal ion-temperature-gradient-driven modes. To themore » extent that the damping of zonal flows is controlled by the ion-ion collision rate, the point of zonostrophic instability is independent of that rate. Published by AIP Publishing.« less

Flutter and divergence instability of supported piezoelectric nanotubes conveying fluid

NASA Astrophysics Data System (ADS)

Bahaadini, Reza; Hosseini, Mohammad; Jamali, Behnam

2018-01-01

In this paper, divergence and flutter instabilities of supported piezoelectric nanotubes containing flowing fluid are investigated. To take the size effects into account, the nonlocal elasticity theory is implemented in conjunction with the Euler-Bernoulli beam theory incorporating surface stress effects. The Knudsen number is applied to investigate the slip boundary conditions between the flow and wall of nanotube. The nonlocal governing equations of nanotube are obtained using Newtonian method, including the influence of piezoelectric voltage, surface effects, Knudsen number and nonlocal parameter. Applying Galerkin approach to transform resulting equations into a set of eigenvalue equations under the simple-simple (S-S) and clamped-clamped (C-C) boundary conditions. The effects of the piezoelectric voltage, surface effects, Knudsen number, nonlocal parameter and boundary conditions on the divergence and flutter boundaries of nanotubes are discussed. It is observed that the fluid-conveying nanotubes with both ends supported lose their stability by divergence first and then by flutter with increase in fluid velocity. Results indicate the importance of using piezoelectric voltage, nonlocal parameter and Knudsen number in decrease of critical flow velocities of system. Moreover, the surface effects have a significant role on the eigenfrequencies and critical fluid velocity.

Linear theory on temporal instability of megahertz faraday waves for monodisperse microdroplet ejection.

PubMed

Tsai, Shirley C; Tsai, Chen S

2013-08-01

A linear theory on temporal instability of megahertz Faraday waves for monodisperse microdroplet ejection based on mass conservation and linearized Navier-Stokes equations is presented using the most recently observed micrometer- sized droplet ejection from a millimeter-sized spherical water ball as a specific example. The theory is verified in the experiments utilizing silicon-based multiple-Fourier horn ultrasonic nozzles at megahertz frequency to facilitate temporal instability of the Faraday waves. Specifically, the linear theory not only correctly predicted the Faraday wave frequency and onset threshold of Faraday instability, the effect of viscosity, the dynamics of droplet ejection, but also established the first theoretical formula for the size of the ejected droplets, namely, the droplet diameter equals four-tenths of the Faraday wavelength involved. The high rate of increase in Faraday wave amplitude at megahertz drive frequency subsequent to onset threshold, together with enhanced excitation displacement on the nozzle end face, facilitated by the megahertz multiple Fourier horns in resonance, led to high-rate ejection of micrometer- sized monodisperse droplets (>10(7) droplets/s) at low electrical drive power (<;1 W) with short initiation time (<;0.05 s). This is in stark contrast to the Rayleigh-Plateau instability of a liquid jet, which ejects one droplet at a time. The measured diameters of the droplets ranging from 2.2 to 4.6 μm at 2 to 1 MHz drive frequency fall within the optimum particle size range for pulmonary drug delivery.

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

NASA Astrophysics Data System (ADS)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less

Hydrodynamic ion sound instability in systems of a finite length

NASA Astrophysics Data System (ADS)

Koshkarov, O.; Chapurin, O.; Smolyakov, A.; Kaganovich, I.; Ilgisonis, V.

2016-09-01

Plasmas permeated by an energetic ion beam is prone to the kinetic ion-sound instability that occurs as a result of the inverse Landau damping for ion velocity. It is shown here that in a finite length system there exists another type of the ion sound instability which occurs for v02

Marginal instability threshold condition of the aperiodic ordinary mode in equal-mass plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vafin, S.; Schlickeiser, R.; Yoon, P. H.

The purely growing ordinary (O) mode instability for counter-streaming bi-Maxwellian plasma particle distribution functions has recently received renewed attention due to its importance for the solar wind plasma. Here, the analytical marginal instability condition is derived for magnetized plasmas consisting of equal-mass charged particles, distributed in counter-streams with equal temperatures. The equal-mass composition assumption enormously facilitates the theoretical analysis due to the equality of the values of the electron and positron (positive and negative ion) plasma and gyrofrequencies. The existence of a new instability domain of the O-mode at small plasma beta values is confirmed, when the parallel counter-stream freemore » energy exceeds the perpendicular bi-Maxwellian free energy.« less

Linear study of the precessional fishbone instability

NASA Astrophysics Data System (ADS)

Idouakass, M.; Faganello, M.; Berk, H. L.; Garbet, X.; Benkadda, S.

2016-10-01

The precessional fishbone instability is an m = n = 1 internal kink mode destabilized by a population of trapped energetic particles. The linear phase of this instability is studied here, analytically and numerically, with a simplified model. This model uses the reduced magneto-hydrodynamics equations for the bulk plasma and the Vlasov equation for a population of energetic particles with a radially decreasing density. A threshold condition for the instability is found, as well as a linear growth rate and frequency. It is shown that the mode frequency is given by the precession frequency of the deeply trapped energetic particles at the position of strongest radial gradient. The growth rate is shown to scale with the energetic particle density and particle energy while it is decreased by continuum damping.

Parallel proton fire hose instability in the expanding solar wind: Hybrid simulations

NASA Astrophysics Data System (ADS)

Matteini, Lorenzo; Landi, Simone; Hellinger, Petr; Velli, Marco

2006-10-01

We report a study of the properties of the parallel proton fire hose instability comparing the results obtained by the linear analysis, from one-dimensional (1-D) standard hybrid simulations and 1-D hybrid expanding box simulations. The three different approaches converge toward the same instability threshold condition which is in good agreement with in situ observations, suggesting that such instability is relevant in the solar wind context. We investigate also the effect of the wave-particle interactions on shaping the proton distribution function and on the evolution of the spectrum of the magnetic fluctuations during the expansion. We find that the resonant interaction can provide the proton distribution function to depart from the bi-Maxwellian form.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

NASA Astrophysics Data System (ADS)

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-09-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

PubMed Central

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-01-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae

2007-07-01

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.

Parametric spatiotemporal oscillation in reaction-diffusion systems.

PubMed

Ghosh, Shyamolina; Ray, Deb Shankar

2016-03-01

We consider a reaction-diffusion system in a homogeneous stable steady state. On perturbation by a time-dependent sinusoidal forcing of a suitable scaling parameter the system exhibits parametric spatiotemporal instability beyond a critical threshold frequency. We have formulated a general scheme to calculate the threshold condition for oscillation and the range of unstable spatial modes lying within a V-shaped region reminiscent of Arnold's tongue. Full numerical simulations show that depending on the specificity of nonlinearity of the models, the instability may result in time-periodic stationary patterns in the form of standing clusters or spatially localized breathing patterns with characteristic wavelengths. Our theoretical analysis of the parametric oscillation in reaction-diffusion system is corroborated by full numerical simulation of two well-known chemical dynamical models: chlorite-iodine-malonic acid and Briggs-Rauscher reactions.

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sokolovskii, G. S.; Dudelev, V. V.; Deryagin, A. G.

2015-06-29

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The originmore » of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.« less

Parametric spatiotemporal oscillation in reaction-diffusion systems

NASA Astrophysics Data System (ADS)

Ghosh, Shyamolina; Ray, Deb Shankar

2016-03-01

We consider a reaction-diffusion system in a homogeneous stable steady state. On perturbation by a time-dependent sinusoidal forcing of a suitable scaling parameter the system exhibits parametric spatiotemporal instability beyond a critical threshold frequency. We have formulated a general scheme to calculate the threshold condition for oscillation and the range of unstable spatial modes lying within a V-shaped region reminiscent of Arnold's tongue. Full numerical simulations show that depending on the specificity of nonlinearity of the models, the instability may result in time-periodic stationary patterns in the form of standing clusters or spatially localized breathing patterns with characteristic wavelengths. Our theoretical analysis of the parametric oscillation in reaction-diffusion system is corroborated by full numerical simulation of two well-known chemical dynamical models: chlorite-iodine-malonic acid and Briggs-Rauscher reactions.

An experimental investigation on the subcritical instability in plane Poieseuille flow

NASA Technical Reports Server (NTRS)

Nishioka, T.; Honda, S.; Kamibayashi, S.

1981-01-01

The relationship between the three dimensional properties of the fundamental flow of a plane Poieseuille flow and subcritical stability was studied. An S-T wave was introduced into the flow and the three dimensional development of the wave observed. Results indicate that: (1) the T-S wave has three dimensional properties which are synchronous with the fundamental flow, but there is damping at microamplitude; (2) when the amplitude reaches a certain threshold, subcritical instability and peak valley bifurcation occur simultaneously and a peak valley structure is formed; (3) this threshold depends to a great extent on the frequency; and (4) after the peak valley bifurcation there is a transition to a turbulent flow by the process of laminar flow collapse identical to that in Blasius flow.

Saturation of low-threshold two-plasmon parametric decay leading to excitation of one localized upper hybrid wave

NASA Astrophysics Data System (ADS)

Gusakov, E. Z.; Popov, A. Yu.; Saveliev, A. N.

2018-06-01

We analyze the saturation of the low-threshold absolute parametric decay instability of an extraordinary pump wave leading to the excitation of two upper hybrid (UH) waves, only one of which is trapped in the vicinity of a local maximum of the plasma density profile. The pump depletion and the secondary decay of the localized daughter UH wave are treated as the most likely moderators of a primary two-plasmon decay instability. The reduced equations describing the nonlinear saturation phenomena are derived. The general analytical consideration is accompanied by the numerical analysis performed under the experimental conditions typical of the off-axis X2-mode ECRH experiments at TEXTOR. The possibility of substantial (up to 20%) anomalous absorption of the pump wave is predicted.

Method and system for controlling a synchronous machine over full operating range

DOEpatents

Walters, James E.; Gunawan, Fani S.; Xue, Yanhong

2002-01-01

System and method for controlling a synchronous machine are provided. The method allows for calculating a stator voltage index. The method further allows for relating the magnitude of the stator voltage index against a threshold voltage value. An offset signal is generated based on the results of the relating step. A respective state of operation of the machine is determined. The offset signal is processed based on the respective state of the machine.

The effects of piracetam and its novel peptide analogue GVS-111 on neuronal voltage-gated calcium and potassium channels.

PubMed

Solntseva, E I; Bukanova, J V; Ostrovskaya, R U; Gudasheva, T A; Voronina, T A; Skrebitsky, V G

1997-07-01

1. With the use of the two-microelectrode voltage-clamp method, three types of voltage-activated ionic currents were examined in isolated neurons of the snail Helix pomatia: high-threshold Ca2+ current (ICa), high-threshold Ca(2+)-dependent K+ current (IK(Ca)) and high-threshold K+ current independent of Ca2+ (IK(V)). 2. The effect of bath application of the nootropics piracetam and a novel piracetam peptide analog, ethyl ester of N-phenyl-acetyl-L-prolyl-glycine (GVS-111), on these three types of voltage-activated ionic currents was studied. 3. In more than half of the tested cells, ICa was resistant to both piracetam and GVS-111. In the rest of the cells, ICa decreased 19 +/- 7% with 2 mM of piracetam and 39 +/- 14% with 2 microM of GVS-111. 4. IK(V) in almost all cells tested was resistant to piracetam at concentrations up to 2 mM. However, IK(V) in two-thirds of the cells was sensitive to GVS-111, being suppressed 49 +/- 18% with 1 microM GVS-111. 5. IK(Ca) appeared to be the most sensitive current of those studied to both piracetam and GVS-111. Piracetam at 1 mM and GVS-111 at 0.1 microM decreased the amplitude of IK(Ca) in most of the cells examined by 49 +/- 19% and 69 +/- 24%, respectively. 6. The results suggest that piracetam and GVS-111 suppression of voltage-activated calcium and potassium currents of the neuronal membrane may regulate (both up and down) Ca2+ influx into neurons.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

Development of a voltage-dependent current noise algorithm for conductance-based stochastic modelling of auditory nerve fibres.

PubMed

Badenhorst, Werner; Hanekom, Tania; Hanekom, Johan J

2016-12-01

This study presents the development of an alternative noise current term and novel voltage-dependent current noise algorithm for conductance-based stochastic auditory nerve fibre (ANF) models. ANFs are known to have significant variance in threshold stimulus which affects temporal characteristics such as latency. This variance is primarily caused by the stochastic behaviour or microscopic fluctuations of the node of Ranvier's voltage-dependent sodium channels of which the intensity is a function of membrane voltage. Though easy to implement and low in computational cost, existing current noise models have two deficiencies: it is independent of membrane voltage, and it is unable to inherently determine the noise intensity required to produce in vivo measured discharge probability functions. The proposed algorithm overcomes these deficiencies while maintaining its low computational cost and ease of implementation compared to other conductance and Markovian-based stochastic models. The algorithm is applied to a Hodgkin-Huxley-based compartmental cat ANF model and validated via comparison of the threshold probability and latency distributions to measured cat ANF data. Simulation results show the algorithm's adherence to in vivo stochastic fibre characteristics such as an exponential relationship between the membrane noise and transmembrane voltage, a negative linear relationship between the log of the relative spread of the discharge probability and the log of the fibre diameter and a decrease in latency with an increase in stimulus intensity.

An Novel Continuation Power Flow Method Based on Line Voltage Stability Index

NASA Astrophysics Data System (ADS)

Zhou, Jianfang; He, Yuqing; He, Hongbin; Jiang, Zhuohan

2018-01-01

An novel continuation power flow method based on line voltage stability index is proposed in this paper. Line voltage stability index is used to determine the selection of parameterized lines, and constantly updated with the change of load parameterized lines. The calculation stages of the continuation power flow decided by the angle changes of the prediction of development trend equation direction vector are proposed in this paper. And, an adaptive step length control strategy is used to calculate the next prediction direction and value according to different calculation stages. The proposed method is applied clear physical concept, and the high computing speed, also considering the local characteristics of voltage instability which can reflect the weak nodes and weak area in a power system. Due to more fully to calculate the PV curves, the proposed method has certain advantages on analysing the voltage stability margin to large-scale power grid.

Theory and Experimental and Chemical Instabilities

DTIC Science & Technology

1989-01-31

Thresholds, Hysteresis, and Neuromodulation of Signal-to-Noise; and Statistical-Mechanical Theory of Many-body Effects in Reaction Rates. T Ic 2 UL3...submitted to the Journal of Physical Chemistry. 6. Noise in Neural Networks: Thresholds, Hysteresis, and Neuromodulation of Signal-to-Noise. We study a...neural-network model including Gaussian noise, higher-order neuronal interactions, and neuromodulation . For a first-order network, there is a

An electroviscous damper

NASA Technical Reports Server (NTRS)

Nikolajsen, Jorgen L.; Hoque, M. S.

1989-01-01

A new type of vibration damper for rotor systems was developed and tested. The damper contains electroviscous fluid which solidifies and provides Coulomb damping when an electric voltage is imposed across the fluid. The damping capacity is controlled by the voltage. The damper was incorporated in a flexible rotor system and found to be able to damp out high levels of unbalanced excitation. Other proven advantages include controllability, simplicity, and no requirement for oil supply. Still unconfirmed are the capabilities to eliminate critical speeds and to suppress rotor instabilities.

Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

NASA Astrophysics Data System (ADS)

Mookerjea, Saurabh A.

Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SS<60 mV/dec) transistors are under intense research for its potential to replace the ubiquitous MOSFET. The focus of this dissertation is on the design, fabrication and characterization of band-to-band tunneling field effect transistor (TFET) which belongs to the family of steep slope transistors. TFET with a gate modulated zener tunnel junction at the source allows sub-kT/q (sub-60 mV/dec at room temperature) sub-threshold slope (SS) device operation over a certain gate bias range near the off-state. This allows TFET to achieve much higher I ON-IOFF ratio over a specified gate voltage swing compared to MOSFETs, thus enabling aggressive supply voltage scaling for low power logic operation without impacting its ON-OFF current ratio. This dissertation presents the operating principle of TFET, the material selection strategy and device design for TFET fabrication. This is followed by a novel 6T SRAM design which circumvents the issue of unidirectional conduction in TFET. The switching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

Three-dimensional instability analysis of boundary layers perturbed by streamwise vortices

NASA Astrophysics Data System (ADS)

Martín, Juan A.; Paredes, Pedro

2017-12-01

A parametric study is presented for the incompressible, zero-pressure-gradient flat-plate boundary layer perturbed by streamwise vortices. The vortices are placed near the leading edge and model the vortices induced by miniature vortex generators (MVGs), which consist in a spanwise-periodic array of small winglet pairs. The introduction of MVGs has been experimentally proved to be a successful passive flow control strategy for delaying laminar-turbulent transition caused by Tollmien-Schlichting (TS) waves. The counter-rotating vortex pairs induce non-modal, transient growth that leads to a streaky boundary layer flow. The initial intensity of the vortices and their wall-normal distances to the plate wall are varied with the aim of finding the most effective location for streak generation and the effect on the instability characteristics of the perturbed flow. The study includes the solution of the three-dimensional, stationary, streaky boundary layer flows by using the boundary region equations, and the three-dimensional instability analysis of the resulting basic flows by using the plane-marching parabolized stability equations. Depending on the initial circulation and positioning of the vortices, planar TS waves are stabilized by the presence of the streaks, resulting in a reduction in the region of instability and shrink of the neutral stability curve. For a fixed maximum streak amplitude below the threshold for secondary instability (SI), the most effective wall-normal distance for the formation of the streaks is found to also offer the most stabilization of TS waves. By setting a maximum streak amplitude above the threshold for SI, sinuous shear layer modes become unstable, as well as another instability mode that is amplified in a narrow region near the vortex inlet position.

Retinal ganglion cell responses to voltage and current stimulation in wild-type and rd1 mouse retinas

NASA Astrophysics Data System (ADS)

Goo, Yong Sook; Ye, Jang Hee; Lee, Seokyoung; Nam, Yoonkey; Ryu, Sang Baek; Kim, Kyung Hwan

2011-06-01

Retinal prostheses are being developed to restore vision for those with retinal diseases such as retinitis pigmentosa or age-related macular degeneration. Since neural prostheses depend upon electrical stimulation to control neural activity, optimal stimulation parameters for successful encoding of visual information are one of the most important requirements to enable visual perception. In this paper, we focused on retinal ganglion cell (RGC) responses to different stimulation parameters and compared threshold charge densities in wild-type and rd1 mice. For this purpose, we used in vitro retinal preparations of wild-type and rd1 mice. When the neural network was stimulated with voltage- and current-controlled pulses, RGCs from both wild-type and rd1 mice responded; however the temporal pattern of RGC response is very different. In wild-type RGCs, a single peak within 100 ms appears, while multiple peaks (approximately four peaks) with ~10 Hz rhythm within 400 ms appear in RGCs in the degenerated retina of rd1 mice. We find that an anodic phase-first biphasic voltage-controlled pulse is more efficient for stimulation than a biphasic current-controlled pulse based on lower threshold charge density. The threshold charge densities for activation of RGCs both with voltage- and current-controlled pulses are overall more elevated for the rd1 mouse than the wild-type mouse. Here, we propose the stimulus range for wild-type and rd1 retinas when the optimal modulation of a RGC response is possible.

Stability of Li- and Mn-Rich Layered-Oxide Cathodes within the First-Charge Voltage Plateau

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iddir, Hakim; Bareño, Javier; Benedek, Roy

Li and Mn rich layered oxides xLi 2MnO 3•(1-x)LiMO 2 enable high capacity and energy density Li-ion batteries, but undergo structural transformations during the first charge that degrade their performance, and result in Voltage Fade upon cycling. First-principles density-functional-theory simulations reveal atomic transformations that occur in the bulk during the first charge. The simulations and experiment (particularly XRD) show that the O and Mn sublattices remain intact during the early part of the voltage plateau, and significant transformations occur only well into the voltage plateau, with perhaps close to half of the Li in the Li 2MnO 3 domains removed.more » That Voltage Fade is actually observed experimentally for a first charge with only minimal activation (extending only slightly beyond the onset of the voltage plateau) may be a consequence of surface and interface instabilities. Implications for the achievement of high energy-density, low-fade battery operation are discussed.« less

On electro-hydrodynamic effects over liquids under influence of corona discharge

NASA Astrophysics Data System (ADS)

Bychkov, V. L.; Abakumov, V. I.; Bikmukhametova, A. R.; Chernikov, V. A.; Safronenkov, D. A.

2018-03-01

Electrohydrodynamic effects over liquids under high voltage electrode are considered in experiments with corona discharge. Simple theory is applied for description of a funnel appearance over a liquid is presented. New types of electrohydrodynamic instabilities are revealed.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Threshold for the destabilisation of the ion-temperature-gradient mode in magnetically confined toroidal plasmas

NASA Astrophysics Data System (ADS)

Zocco, A.; Xanthopoulos, P.; Doerk, H.; Connor, J. W.; Helander, P.

2018-02-01

The threshold for the resonant destabilisation of ion-temperature-gradient (ITG) driven instabilities that render the modes ubiquitous in both tokamaks and stellarators is investigated. We discover remarkably similar results for both confinement concepts if care is taken in the analysis of the effect of the global shear . We revisit, analytically and by means of gyrokinetic simulations, accepted tokamak results and discover inadequacies of some aspects of their theoretical interpretation. In particular, for standard tokamak configurations, we find that global shear effects on the critical gradient cannot be attributed to the wave-particle resonance destabilising mechanism of Hahm & Tang (Phys. Plasmas, vol. 1, 1989, pp. 1185-1192), but are consistent with a stabilising contribution predicted by Biglari et al. (Phys. Plasmas, vol. 1, 1989, pp. 109-118). Extensive analytical and numerical investigations show that virtually no previous tokamak theoretical predictions capture the temperature dependence of the mode frequency at marginality, thus leading to incorrect instability thresholds. In the asymptotic limit , where is the rotational transform, and such a threshold should be solely determined by the resonant toroidal branch of the ITG mode, we discover a family of unstable solutions below the previously known threshold of instability. This is true for a tokamak case described by a local local equilibrium, and for the stellarator Wendelstein 7-X, where these unstable solutions are present even for configurations with a small trapped-particle population. We conjecture they are of the Floquet type and derive their properties from the Fourier analysis of toroidal drift modes of Connor & Taylor (Phys. Fluids, vol. 30, 1987, pp. 3180-3185), and to Hill's theory of the motion of the lunar perigee (Acta Math., vol. 8, 1886, pp. 1-36). The temperature dependence of the newly determined threshold is given for both confinement concepts. In the first case, the new temperature-gradient threshold is found to be rather insensitive to the temperature ratio i/Te$ , at least for i/Te\\lesssim 1$ , and to be a growing function of the density gradient scale for i/Te\\gtrsim 1$ . For Wendelstein 7-X, the new critical temperature gradient is a growing function of the temperature ratio. The importance of these findings for the assessment of turbulence in stellarators and low-shear tokamak configurations is discussed.

Over-voltage protection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chi, Song; Dong, Dong; Lai, Rixin

An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diodemore » indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.« less

Paradigm shift in lead design.

PubMed

Irnich, W

1999-09-01

During the past 30 years there has been a tremendous development in electrode technology from bulky (90 mm2) to pin-sized (1.0 mm2) electrodes. Simultaneously, impedance has increased from 110 Ohms to >1 kOhms, which has been termed a "paradigm shift" in lead design. If current is responsible for stimulation, why is its impedance a key factor in saving energy? Further, what mechanism is behind this development based on experimental findings and what conclusion can be drawn from it to optimize electrode size? If it is assumed that there is always a layer of nonexcitable tissue between the electrode surface and excitable myocardium and that the electric field (potential gradient) produced by the electrode at this boundary is reaching threshold level, then a formula can be derived for the voltage threshold that completely describes the electrophysiology and electrophysics of a hemispherical electrode. Assuming that the mean chronic threshold for porous steroid-eluting electrodes is 0.6 V with 0.5-ms pulse duration, thickness of nonexcitable tissue can be estimated to be 1.5 mm. Taking into account this measure and the relationship between chronaxie and electrode area, voltage threshold, impedance, and energy as a function of surface area can be calculated. The lowest voltage for 0.5-ms pulse duration is reached with r(o) = 0.5 d, yielding a surface area of 4 mm2 and a voltage threshold of 0.62 V, an impedance of 1 kOhms, and an energy level of 197 nJ. It can be deduced from our findings that a further reduction of surface areas below 1.6 mm2 will not diminish energy threshold substantially, if pulse duration remains at 0.5 ms. Lowest energy is reached with t = chronaxie, yielding an energy level <100 nJ with surface areas < or =1.5 mm2. It is striking to see how well the theoretically derived results correspond to the experimental findings. It is also surprising that the hemispheric model so accurately approximates experimental results with differently shaped electrodes that it can be concluded that electrode shape seems to play a minor role in electrode efficiency. Further energy reduction can only be achieved by reducing the pulse duration to chronaxie. A real paradigm shift will occur only if the fundamentals of electrostimulation in combination with electrophysics are accepted by the pacing community.

The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety

NASA Astrophysics Data System (ADS)

Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin

2018-01-01

Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.

On the marginal instability threshold condition of the aperiodic ordinary mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlickeiser, R.; Yoon, P. H.; School of Space Research, Kyung Hee University, Yongin

2014-07-15

The purely growing ordinary (O) mode instability has recently received renewed attention owing to its potential applicability to the solar wind plasma. Here, an analytical marginal instability condition is derived for counter-streaming bi-Maxwellian plasma particle distribution functions. The derived marginal instability condition as a function of the temperature anisotropy and plasma beta agrees remarkably well with the numerically determined instability condition. The existence of a new instability domain of the O-mode at small plasma beta values is confirmed with the leading A∝β{sub ∥}{sup −1}-dependence, if the counter-stream parameter P{sub e} exceeds a critical value. At small plasma beta values atmore » large enough counter-stream parameter, the O-mode also operates for temperature anisotropies A = T{sub ⊥}/T{sub ∥} > 1 even larger than unity, as the parallel counter-stream free energy exceeds the perpendicular bi-Maxwellian free energy.« less

Kinetic instability of electrostatic ion cyclotron waves in inter-penetrating plasmas

NASA Astrophysics Data System (ADS)

Bashir, M. F.; Ilie, R.; Murtaza, G.

2018-05-01

The Electrostatic Ion Cyclotron (EIC) instability that includes the effect of wave-particle interaction is studied owing to the free energy source through the flowing velocity of the inter-penetrating plasmas. It is shown that the origin of this current-less instability is different from the classical current driven EIC instability. The threshold conditions applicable to a wide range of plasma parameters and the estimate of the growth rate are determined as a function of the normalized flowing velocity ( u0/vt f e ), the temperature ( Tf/Ts ) and the density ratios ( nf 0/ns 0 ) of flowing component to static one. The EIC instability is driven by either flowing electrons or flowing ions, depending upon the different Doppler shifted frequency domains. It is found that the growth rate for electron-driven instability is higher than the ion-driven one. However, in both cases, the denser (hotter) is the flowing plasma, the lesser (greater) is the growth rate. The possible applications related to the terrestrial solar plasma environment are also discussed.

Stochastic resonance based on modulation instability in spatiotemporal chaos.

PubMed

Han, Jing; Liu, Hongjun; Huang, Nan; Wang, Zhaolu

2017-04-03

A novel dynamic of stochastic resonance in spatiotemporal chaos is presented, which is based on modulation instability of perturbed partially coherent wave. The noise immunity of chaos can be reinforced through this effect and used to restore the coherent signal information buried in chaotic perturbation. A theoretical model with fluctuations term is derived from the complex Ginzburg-Landau equation via Wigner transform. It shows that through weakening the nonlinear threshold and triggering energy redistribution, the coherent component dominates the instability damped by incoherent component. The spatiotemporal output showing the properties of stochastic resonance may provide a potential application of signal encryption and restoration.

Parametric Excitation of Marangoni Instability in a Heated Thin Layer Covered by Insoluble Surfactant

NASA Astrophysics Data System (ADS)

Mikishev, Alexander B.; Nepomnyashchy, Alexander A.

2018-05-01

The paper presents the analysis of the impact of vertical periodic vibrations on the long-wavelength Marangoni instability in a liquid layer with poorly conducting boundaries in the presence of insoluble surfactant on the deformable gas-liquid interface. The layer is subject to a uniform transverse temperature gradient. Linear stability analysis is performed in order to find critical values of Marangoni numbers for both monotonic and oscillatory instability modes. Longwave asymptotic expansions are used. At the leading order, the critical values are independent on vibration parameters; at the next order of approximation we obtained the rise of stability thresholds due to vibration.

Broadband impedance calculations and single bunch instabilities estimations of of the HLS-II storage ring

NASA Astrophysics Data System (ADS)

Zhang, Qing-Kun; Wang, Lin; Li, Wei-Min; Gao, Wei-Wei

2015-12-01

The upgrade project of the Hefei Light Source storage ring is under way. In this paper, the broadband impedances of resistive wall and coated ceramic vacuum chamber are calculated using the analytic formula, and the wake fields and impedances of other designed vacuum chambers are simulated by CST code, and then a broadband impedance model is obtained. Using the theoretical formula, longitudinal and transverse single bunch instabilities are discussed. With the carefully-designed vacuum chamber, we find that the thresholds of the beam instabilities are higher than the beam current goal. Supported by Natural Science Foundation of China (11175182, 11175180)

Experimental Evidence for Magnetorotational Instability in a Taylor-Couette Flow under the Influence of a Helical Magnetic Field

NASA Astrophysics Data System (ADS)

Stefani, Frank; Gundrum, Thomas; Gerbeth, Gunter; Rüdiger, Günther; Schultz, Manfred; Szklarski, Jacek; Hollerbach, Rainer

2006-11-01

A recent Letter [R. Hollerbach and G. Rüdiger, Phys. Rev. Lett. 95, 124501 (2005)PRLTAO0031-900710.1103/PhysRevLett.95.124501] has shown that the threshold for the onset of the magnetorotational instability in a Taylor-Couette flow is dramatically reduced if both axial and azimuthal magnetic fields are imposed. In agreement with this prediction, we present results of a Taylor-Couette experiment with the liquid metal alloy GaInSn, showing evidence for the existence of the magnetorotational instability at Reynolds numbers of order 1000 and Hartmann numbers of order 10.

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

NASA Technical Reports Server (NTRS)

Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

1989-01-01

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Quantum Corrections to the 'Atomistic' MOSFET Simulations

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Addressable inverter matrix for process and device characterization

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Sayah, H. R.

1985-01-01

The addressable inverter matrix consists of 222 inverters each accessible with the aid of a shift register. The structure has proven useful in characterizing the variability of inverter transfer curves and in diagnosing processing faults. For good 3-micron CMOS bulk inverters investigated, the percent standard deviation of the inverter threshold voltage was less than one percent and the inverter gain (the slope of the inverter transfer curve at the inverter threshold vltage) was less than 3 percent. The average noise margin for the inverters was near 2 volts for a power supply voltage of 5 volts. The specific faults studied included undersize pull-down transistor widths and various open contacts in the matrix.

[Protective effect of Uncaria rhynchophylla total alkaloids pretreatment on hippocampal neurons after acute hypoxia].

PubMed

Liu, Wei; Zhang, Zhao-qin; Zhao, Xiao-min; Gao, Yun-sheng

2006-05-01

To investigate the effect of Uncaria rhynchophylla total alkaloids (RTA) pretreatment on the voltage-gated sodium currents of the rat hippocampal neurons after acute hypoxia. Primary cultured hippocampal neurons were divided into RTA pre-treated and non-pretreated groups. Patch clamp whole-cell recording was used to compare the voltage-gated sodium current amplitude and threshold with those before hypoxia. After acute hypoxia, sodium current amplitude was significantly decreased and its threshold was upside. RTA pretreatment could inhibit the reduction of sodium current amplitude. RTA pretreatment alleviates the acute hypoxia-induced change of sodium currents, which may be one of the mechanisms for protective effect of RTA on cells.

Reexamining X-mode suppression and fine structure in artificial E region field-aligned plasma density irregularities

NASA Astrophysics Data System (ADS)

Miceli, R. J.; Hysell, D. L.; Munk, J.; McCarrick, M.; Huba, J. D.

2013-09-01

Artificial field-aligned plasma density irregularities (FAIs) were generated in the E region of the ionosphere above the High Frequency Active Auroral Research Program facility during campaigns in May and August of 2012 and observed using a 30 MHz coherent scatter radar imager in Homer, Alaska. The purpose of this ionospheric modification experiment was to measure the threshold pump power required to excite thermal parametric instabilities by O-mode heating and to investigate the suppression of the FAIs by simultaneous X-mode heating. We find that the threshold pump power for irregularity excitation was consistent with theoretical predictions and increased by approximately a factor of 2 when X-mode heating was present. A modified version of the Another Model of the Ionosphere (SAMI2) ionospheric model was used to simulate the threshold experiments and suggested that the increase was entirely due to enhanced D region absorption associated with X-mode heating. Additionally, a remarkable degree of fine structure possibly caused by natural gradient drift instability in the heater-modified volume was observed in experiments performed during geomagnetically active conditions.

Regulation of star formation in giant galaxies by precipitation, feedback and conduction.

PubMed

Voit, G M; Donahue, M; Bryan, G L; McDonald, M

2015-03-12

The Universe's largest galaxies reside at the centres of galaxy clusters and are embedded in hot gas that, if left undisturbed, would cool quickly and create many more new stars than are actually observed. Cooling can be regulated by feedback from accretion of cooling gas onto the central black hole, but requires an accretion rate finely tuned to the thermodynamic state of the hot gas. Theoretical models in which cold clouds precipitate out of the hot gas via thermal instability and accrete onto the black hole exhibit the necessary tuning. Recent observational evidence shows that the abundance of cold gas in the centres of clusters increases rapidly near the predicted threshold for instability. Here we report observations showing that this precipitation threshold extends over a large range in cluster radius, cluster mass and cosmic time. We incorporate the precipitation threshold into a framework of theoretical models for the thermodynamic state of hot gas in galaxy clusters. According to that framework, precipitation regulates star formation in some giant galaxies, while thermal conduction prevents star formation in others if it can compensate for radiative cooling and shut off precipitation.

Electromechanical instability in soft materials: Theory, experiments and applications

NASA Astrophysics Data System (ADS)

Suo, Zhigang

2013-03-01

Subject to a voltage, a membrane of a dielectric elastomer reduces thickness and expands area, possibly straining over 100%. The phenomenon is being developed as transducers for broad applications, including soft robots, adaptive optics, Braille displays, and electric generators. The behavior of dielectric elastomers is closely tied to electromechanical instability. This instability may limit the performance of devices, and may also be used to achieve giant actuation strains. This talk reviews the theory of dielectric elastomers, coupling large deformation and electric potential. The theory is developed within the framework of continuum mechanics and thermodynamics. The theory attempts to answer commonly asked questions. How do mechanics and electrostatics work together to generate large deformation? How efficiently can a material convert energy from one form to another? How do molecular processes affect macroscopic behavior? The theory is used to describe electromechanical instability, and is related to recent experiments.

Scrape-off-layer characterization and current-control of kink modes in HBT-EP

NASA Astrophysics Data System (ADS)

Brooks, John; Stewart, Ian; Levesque, Jeffrey; Mauel, Mike; Navratil, Gerald

2017-10-01

Scrape-off layer (SOL) currents and their paths through tokamaks are not well understood, but their control may prove crucial to the success of ITER and future fusion energy devices. We extend Columbia University's High Beta Tokamak-Extended Pulse (HBT-EP) experiment and active GPU feedback system to study the SOL and control MHD kink instabilities by actively controlling these currents. First, the radial plasma profiles and the edge structure of kink instabilities are measured with two triple probes. Second, we use active feedback control of a radially adjustable biased electrode to change the rotation and magnitude of slowly growing kink instabilities. By changing the phase between the probe's voltage and the edge instability with active feedback, we study its ability to influence and control plasma MHD structures. This work is in preparation for a planned 2018 multi-electrode SOL control upgrade. Supported by U.S. DOE Grant DE-FG02-86ER53222.

Beam measurement of the high frequency impedance sources with long bunches in the CERN Super Proton Synchrotron

NASA Astrophysics Data System (ADS)

Lasheen, A.; Argyropoulos, T.; Bohl, T.; Esteban Müller, J. F.; Timko, H.; Shaposhnikova, E.

2018-03-01

Microwave instability in the Super Proton Synchrotron (SPS) at CERN is one of the main limitations to reach the requirements for the High Luminosity-LHC project (increased beam intensity by a factor 2). To identify the impedance source responsible of the instability, beam measurements were carried out to probe the SPS impedance. The method presented in this paper relies on measurements of the unstable spectra of single bunches, injected in the SPS with the rf voltage switched off. The modulation of the bunch profile gives information about the main impedance sources driving microwave instability, and is compared to particle simulations using the SPS impedance model to identify the most important contributions. This allowed us to identify the vacuum flanges as the main impedance source for microwave instability in the SPS, and to evaluate possible missing impedance sources.

Mitigation of Hot Electrons from Laser-Plasma Instabilities in Laser-Generated X-Ray Sources

NASA Astrophysics Data System (ADS)

Fein, Jeffrey R.

This thesis describes experiments to understand and mitigate energetic or "hot" electrons from laser-plasma instabilities (LPIs) in an effort to improve radiographic techniques using laser-generated x-ray sources. Initial experiments on the OMEGA-60 laser show evidence of an underlying background generated by x-rays with energies over 10 keV on radiographs using backlit pinhole radiography, whose source is consistent with hard x-rays from LPI-generated hot electrons. Mitigating this background can dramatically reduce uncertainties in measured object densities from radiographs and may be achieved by eliminating the target components in which LPIs are most likely to grow. Experiments were performed on the OMEGA-EP laser to study hot electron production from laser-plasma instabilities in high-Z plasmas relevant to laser-generated x-ray sources. Measurements of hard x-rays show a dramatic reduction in hot-electron energy going from low-Z CH to high-Z Au targets, in a manner that is consistent with steepening electron density profiles that were also measured. The profile-steepening, we infer, increased thresholds of LPIs and contributed to the reduced hot-electron production at higher Z. Possible mechanisms for generating hot electrons include the two-plasmon decay and stimulated Raman scattering instabilities driven by multiple laser beams. Radiation hydrodynamic simulations using the CRASH code predict that both of these instabilities were above threshold with linear threshold parameters that decreased with increasing Z due to steepening length-scales, as well as enhanced laser absorption and increased collisional and Landau damping of electron plasma waves. Another set of experiments were performed on the OMEGA-60 laser to test whether hard x-ray background could be mitigated in backlit pinhole imagers by controlling laser-plasma instabilities. Based on the results above, we hypothesized that LPIs and hot electrons that lead to hard x-ray background would be reduced by increasing the atomic number of the irradiated components in the pinhole imagers. Using higher-Z materials we demonstrate significant reduction in x-rays between 30-70 keV and 70% increase in the signal-to-background ratio. Based on this, a proposed backlighter and detector setup predicts a signal-to-background ratio of up to 4.5:1.

Strongly nonlinear dynamics of electrolytes in large ac voltages.

PubMed

Højgaard Olesen, Laurits; Bazant, Martin Z; Bruus, Henrik

2010-07-01

We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features--significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination" since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

Unzip instabilities: Straight to oscillatory transitions in the cutting of thin polymer sheets

NASA Astrophysics Data System (ADS)

Reis, P. M.; Kumar, A.; Shattuck, M. D.; Roman, B.

2008-06-01

We report an experimental investigation of the cutting of a thin brittle polymer sheet with a blunt tool. It was recently shown that the fracture path becomes oscillatory when the tool is much wider than the sheet thickness. Here we uncover two novel transitions from straight to oscillatory fracture by varying either the tilt angle of the tool or the speed of cutting, respectively. We denote these by angle and speed unzip instabilities and analyze them by quantifying both the dynamics of the crack tip and the final shapes of the fracture paths. Moreover, for the speed unzip instability, the straight crack lip obtained at low speeds exhibits out-of-plane buckling undulations (as opposed to being flat above the instability threshold) suggesting a transition from ductile to brittle fracture.

Volume nanograting formation in laser-silica interaction as a result of the 1D plasma-resonance ionization instability

NASA Astrophysics Data System (ADS)

Gildenburg, V. B.; Pavlichenko, I. A.

2016-08-01

The initial stage of the small-scale ionization-induced instability developing inside the fused silica volume exposed to the femtosecond laser pulse is studied as a possible initial cause of the self-organized nanograting formation. We have calculated the spatial spectra of the instability with the electron-hole diffusion taken into account for the first time and have found that it results in the formation of some hybrid (diffusion-wave) 1D structure with the spatial period determined as the geometrical mean of the laser wavelength and characteristic diffusion length of the process considered. Near the threshold of the instability, this period occurs to be approximately equal to the laser half-wavelength in the silica, close to the one experimentally observed.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Mapping Shallow Landslide Slope Inestability at Large Scales Using Remote Sensing and GIS

NASA Astrophysics Data System (ADS)

Avalon Cullen, C.; Kashuk, S.; Temimi, M.; Suhili, R.; Khanbilvardi, R.

2015-12-01

Rainfall induced landslides are one of the most frequent hazards on slanted terrains. They lead to great economic losses and fatalities worldwide. Most factors inducing shallow landslides are local and can only be mapped with high levels of uncertainty at larger scales. This work presents an attempt to determine slope instability at large scales. Buffer and threshold techniques are used to downscale areas and minimize uncertainties. Four static parameters (slope angle, soil type, land cover and elevation) for 261 shallow rainfall-induced landslides in the continental United States are examined. ASTER GDEM is used as bases for topographical characterization of slope and buffer analysis. Slope angle threshold assessment at the 50, 75, 95, 98, and 99 percentiles is tested locally. Further analysis of each threshold in relation to other parameters is investigated in a logistic regression environment for the continental U.S. It is determined that lower than 95-percentile thresholds under-estimate slope angles. Best regression fit can be achieved when utilizing the 99-threshold slope angle. This model predicts the highest number of cases correctly at 87.0% accuracy. A one-unit rise in the 99-threshold range increases landslide likelihood by 11.8%. The logistic regression model is carried over to ArcGIS where all variables are processed based on their corresponding coefficients. A regional slope instability map for the continental United States is created and analyzed against the available landslide records and their spatial distributions. It is expected that future inclusion of dynamic parameters like precipitation and other proxies like soil moisture into the model will further improve accuracy.

Different roles of electron beam in two stream instability in an elliptical waveguide for generation and amplification of THz electromagnetic waves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safari, S.; Jazi, B., E-mail: jaziada@kashanu.ac.ir; Jahanbakht, S.

2016-08-15

In this work, two stream instability in a metallic waveguide with elliptical cross-section and with a hollow annular dielectric layer is studied for generation and amplification of THz electromagnetic waves. Dispersion relation of waves and their dependents to geometric dimensions and characteristics of the electron beam are analyzed. In continuation, the diagrams of growth rate for some operating frequencies are presented, so that effective factors on the growth rates, such as geometrical dimensions, dielectric constant of dielectric layer, accelerating voltage, and applied current intensity are analyzed. It is shown that while an electron beam is responsible for instability, another electronmore » beam plays a stabilizing role.« less

Transverse mode instability of fiber oscillators in comparison with fiber amplifiers

NASA Astrophysics Data System (ADS)

Hejaz, Kamran; Shayganmanesh, Mahdi; Azizi, Saeed; Abedinajafi, Ali; Roohforouz, Ali; Rezaei-Nasirabad, Reza; Vatani, Vahid

2018-05-01

Transverse mode instability (TMI) is experimentally investigated in a fiber oscillator and a fiber amplifier. For a reasonable comparison of TMI in these two configurations, the same optical components and design parameters are applied to both. Our experimental results show that the TMI power threshold in a fiber oscillator is lower than in a corresponding fiber amplifier. By using simulation software, a fiber oscillator and an amplifier are designed with similar characteristics, to provide identical conditions for all effective parameters on TMI in both of them. Since the signal propagation in fiber oscillators is different from that of single-pass fiber amplifiers, and also since both forward and backward propagating signals in fiber oscillators can generate thermo-optic index gratings, the observed lower TMI threshold in the fiber oscillator is due to its different interaction of light with index gratings.

Full melting of a two-dimensional complex plasma crystal triggered by localized pulsed laser heating

NASA Astrophysics Data System (ADS)

Couëdel, L.; Nosenko, V.; Rubin-Zuzic, M.; Zhdanov, S.; Elskens, Y.; Hall, T.; Ivlev, A. V.

2018-04-01

The full melting of a two-dimensional plasma crystal was induced in a principally stable monolayer by localized laser stimulation. Two distinct behaviors of the crystal after laser stimulation were observed depending on the amount of injected energy: (i) below a well-defined threshold, the laser melted area recrystallized; (ii) above the threshold, it expanded outwards in a similar fashion to mode-coupling instability-induced melting, rapidly destroying the crystalline order of the whole complex plasma monolayer. The reported experimental observations are due to the fluid mode-coupling instability, which can pump energy into the particle monolayer at a rate surpassing the heat transport and damping rates in the energetic localized melted spot, resulting in its further growth. This behavior exhibits remarkable similarities with impulsive spot heating in ordinary reactive matter.

Observation of LPI Thresholds for the Nike Laser

NASA Astrophysics Data System (ADS)

Weaver, J. L.; Oh, J.; Afeyan, B.; Charbonneau-Lefort, M.; Phillips, L.; Seely, J.; Kehne, D.; Brown, C.; Obenschain, S.; Schmitt, A. J.; Feldman, U.; Holland, G.; Lehmberg, R. H.; McLean, E.; Manka, C.

2008-11-01

The Nike laser is being used to study thresholds for laser plasma instabilities (LPI) at intensities (10^15-10^16 W/cm^2) relevant to advanced implosion designs for direct drive inertial confinement fusion. The combination of short wavelength (248 nm), large bandwidth (1-2 THz), and beam smoothing by induced spatial incoherence available with this krypton-fluoride laser make these experiments unique among current facilities. This talk will present an overview of results with an emphasis on the two-plasmon decay instability (2φp). Measurements of x-rays and emission near ^1/2φo and ^3/2 φo harmonics of the laser wavelength have been collected over a wide range of intensities for both solid and foam targets. Data indicate collective multiple-angle driven excitation compatible with previous observations using solid planar targets.

Instability of lithium bis(fluorosulfonyl)imide (LiFSI)-potassium bis(fluorosulfonyl)imide (KFSI) system with LiCoO2 at high voltage

NASA Astrophysics Data System (ADS)

Zhang, Shu; Li, Wen-Jun; Ling, Shi-Gang; Li, Hong; Zhou, Zhi-Bin; Chen, Li-Quan

2015-07-01

The cycling performance, impedance variation, and cathode surface evolution of the Li/LiCoO2 cell using LiFSI-KFSI molten salt electrolyte are reported. It is found that this battery shows poor cycling performance, with capacity retention of only about 67% after 20 cycles. It is essential to understand the origin of the instability. It is noticed that the polarization voltage and the impedance of the cell both increase slowly upon cycling. The structure and the properties of the pristine and the cycled LiCoO2 cathodes are investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). It is found that the LiCoO2 particles are corroded by this molten salt electrolyte, and the decomposition by-product covers the surface of the LiCoO2 cathode after 20 cycles. Therefore, the surface side reaction explains the instability of the molten salt electrolyte with LiCoO2. Project supported by the Beijing S&T Project, China (Grant No. Z13111000340000), the National Basic Research Program of China (Grant No. 2012CB932900), and the National Natural Science Foundation of China (Grants Nos. 51325206 and 51421002).

Dipolar excitation in the third stability region.

PubMed

Konenkov, Nikolai V; Chernyak, Eugenii Ya; Stepanov, Vladimir A

Dipole resonant excitation of ions creates instability bands which follow iso-β lines where β is the characteristic exponent (stability parameter). Instability bands are exited most effectively on the fundamental frequency π= βΩ/2. Here π is the angle resonance frequency of the dipolar voltage applied to x or y pair rods of the analyzer, and Ω is the angle frequency of the main drive voltage. Our goal is to study the mass peak shape in the third stability region with dipolar resonance excitation of the instability band with respect to the resonance frequency π and the dipolar potential amplitude. Numerical integration of the ion motion equations with a given ion source emittance is used to investigate peak shapes and ion transmission. We show that it is possible to vary the resolution power at any part of the third stability region. A change of the dipolar potential phase leads to a periodical variation of the resolution with period π.The most effective dipolar excitation in the y direction is along βy near the stability boundary. The mass peak shape is calculated also for a quadrupole with round rods. The best peak shape (small tails and high resolution) takes place for the rod set with r/r0=1.130. Dipolar excitation increases the transmission by approximately 5-10% at a given resolution.

SDSS-IV MaNGA: constraints on the conditions for star formation in galaxy discs

NASA Astrophysics Data System (ADS)

Stark, David V.; Bundy, Kevin A.; Orr, Matthew E.; Hopkins, Philip F.; Westfall, Kyle; Bershady, Matthew; Li, Cheng; Bizyaev, Dmitry; Masters, Karen L.; Weijmans, Anne-Marie; Lacerna, Ivan; Thomas, Daniel; Drory, Niv; Yan, Renbin; Zhang, Kai

2018-02-01

Regions of disc galaxies with widespread star formation tend to be both gravitationally unstable and self-shielded against ionizing radiation, whereas extended outer discs with little or no star formation tend to be stable and unshielded on average. We explore what drives the transition between these two regimes, specifically whether discs first meet the conditions for self-shielding (parametrized by dust optical depth, τ) or gravitational instability (parametrized by a modified version of Toomre's instability parameters, Qthermal, which quantifies the stability of a gas disc that is thermally supported at T = 104 K). We first introduce a new metric formed by the product of these quantities, Qthermalτ, which indicates whether the conditions for disc instability or self-shielding are easier to meet in a given region of a galaxy, and we discuss how Qthermalτ can be constrained even in the absence of direct gas information. We then analyse a sample of 13 galaxies with resolved gas measurements and find that on average galaxies will reach the threshold for disc instabilities (Qthermal < 1) before reaching the threshold for self-shielding (τ > 1). Using integral field spectroscopic observations of a sample of 236 galaxies from the Mapping Nearby Galaxies at APO (MaNGA) survey, we find that the value of Qthermalτ in star-forming discs is consistent with similar behaviour. These results support a scenario where disc fragmentation and collapse occurs before self-shielding, suggesting that gravitational instabilities are the primary condition for widespread star formation in galaxy discs. Our results support similar conclusions based on recent galaxy simulations.

System Detects Vibrational Instabilities

NASA Technical Reports Server (NTRS)

Bozeman, Richard J., Jr.

1990-01-01

Sustained vibrations at two critical frequencies trigger diagnostic response or shutdown. Vibration-analyzing electronic system detects instabilities of combustion in rocket engine. Controls pulse-mode firing of engine and identifies vibrations above threshold amplitude at 5.9 and/or 12kHz. Adapted to other detection and/or control schemes involving simultaneous real-time detection of signals above or below preset amplitudes at two or more specified frequencies. Potential applications include rotating machinery and encoders and decoders in security systems.

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

PubMed Central

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode. PMID:25814770

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2014-09-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode.

On the modelling of linear-assisted DC-DC voltage regulators for photovoltaic solar energy systems

NASA Astrophysics Data System (ADS)

Martínez-García, Herminio; García-Vílchez, Encarna

2017-11-01

This paper shows the modelling of linear-assisted or hybrid (linear & switching) DC/DC voltage regulators. In this kind of regulators, an auxiliary linear regulator is used, which objective is to cancel the ripple at the output voltage and provide fast responses for load variations. On the other hand, a switching DC/DC converter, connected in parallel with the linear regulator, allows to supply almost the whole output current demanded by the load. The objective of this topology is to take advantage of the suitable regulation characteristics that series linear voltage regulators have, but almost achieving the high efficiency that switching DC/DC converters provide. Linear-assisted DC/DC regulators are feedback systems with potential instability. Therefore, their modelling is mandatory in order to obtain design guidelines and assure stability of the implemented power supply system.

Convective Electrokinetic Instability With Conductivity Gradients

NASA Astrophysics Data System (ADS)

Chen, Chuan-Hua; Lin, Hao; Lele, Sanjiva; Santiago, Juan

2003-11-01

Electrokinetic flow instability has been experimentally identified and quantified in a glass T-junction microchannel system with a cross section of 11 um x 155 um. In this system, buffers of different conductivities were electrokinetically driven into a common mixing channel by a DC electric field. A convective instability was observed with a threshold electric field of 0.45 kV/cm for a 10:1 conductivity ratio. A physical model has been developed which consists of a modified Ohmic model formulation for electrolyte solutions and the Navier-Stokes equations with an electric body force term. The model and experiments show that bulk charge accumulation in regions of conductivity gradients is the key mechanism of such instabilities. A linear stability analysis was performed in a convective framework, and Briggs-Bers criteria were applied to determine the nature of instability. The analysis shows the instability is governed by two key parameters: the ratio of molecular diffusion to electroviscous time scale which governs the onset of instability, and the ratio of electroviscous to electroosmotic velocity which governs whether the instability is convective or absolute. The model predicted critical electric field, growth rate, wavelength, and phase speed which were comparable to experimental data.

On the shear instability in relativistic neutron stars

NASA Astrophysics Data System (ADS)

Corvino, Giovanni; Rezzolla, Luciano; Bernuzzi, Sebastiano; De Pietri, Roberto; Giacomazzo, Bruno

2010-06-01

We present new results on instabilities in rapidly and differentially rotating neutron stars. We model the stars in full general relativity and describe the stellar matter adopting a cold realistic equation of state based on the unified SLy prescription (Douchin and Haensel 2001 Astron. Astrophys. 380 151-67). We provide evidence that rapidly and differentially rotating stars that are below the expected threshold for the dynamical bar-mode instability, βc ≡ T/|W| ~= 0.25, do nevertheless develop a shear instability on a dynamical timescale and for a wide range of values of β. This class of instability, which has so far been found only for small values of β and with very small growth rates, is therefore more generic than previously found and potentially more effective in producing strong sources of gravitational waves. Overall, our findings support the phenomenological predictions made by Watts et al (2005 Astrophys. J. 618 L37) on the nature of the low-T/|W| instability as the manifestation of a shear instability in a region where the latter is possible only for small values of β. Furthermore, our results provide additional insight on shear instabilities and on the necessary conditions for their development.

Advanced Initiation Systems Manufacturing Level 2 Milestone Completion Summary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, R; Schmidt, M

2009-10-01

Milestone Description - Advanced Initiation Systems Detonator Design and Prototype. Milestone Grading Criteria - Design new generation chip slapper detonator and manufacture a prototype using advanced manufacturing processes, such as all-dry chip metallization and solvent-less flyer coatings. The advanced processes have been developed for manufacturing detonators with high material compatibility and reliability to support future LEPs, e.g. the B61, and new weapons systems. Perform velocimetry measurements to determine slapper velocity as a function of flight distance. A prototype detonator assembly and stripline was designed for low-energy chip slappers. Pictures of the prototype detonator and stripline are shown. All-dry manufacturing processesmore » were used to address compatibility issues. KCP metallized the chips in a physical vapor deposition system through precision-aligned shadow masks. LLNL deposited a solvent-less polyimide flyer with a processes called SLIP, which stands for solvent-less vapor deposition followed by in-situ polymerization. LANL manufactured the high-surface-area (HSA) high explosive (HE) pellets. Test fires of two chip slapper designs, radius and bowtie, were performed at LLNL in the High Explosives Application Facility (HEAF). Test fires with HE were conducted to establish the threshold firing voltages. pictures of the chip slappers before and after test fires are shown. Velocimetry tests were then performed to obtain slapper velocities at or above the threshold firing voltages. Figure 5 shows the slapper velocity as a function of distance and time at the threshold voltage, for both radius and bowtie bridge designs. Both designs were successful at initiating the HE at low energy levels. Summary of Accomplishments are: (1) All-dry process for chip manufacture developed; (2) Solventless process for slapper materials developed; (3) High-surface area explosive pellets developed; (4) High performance chip slappers developed; (5) Low-energy chip slapper detonator designs; and (6) Low-voltage threshold chip slapper detonator demonstrated.« less

Characterization for the performance of capacitive switches activated by mechanical shock.

PubMed

Younis, Mohammad I; Alsaleem, Fadi M; Miles, Ronald; Su, Quang

2007-01-01

This paper presents experimental and theoretical investigation of a new concept of switches (triggers) that are actuated at or beyond a specific level of mechanical shock or acceleration. The principle of operation of the switches is based on dynamic pull-in instability induced by the combined interaction between electrostatic and mechanical shock forces. These switches can be tuned to be activated at various shock and acceleration thresholds by adjusting the DC voltage bias. Two commercial off-the-shelf capacitive accelerometers operating in air are tested under mechanical shock and electrostatic loading. A single-degree-of-freedom model accounting for squeeze-film damping, electrostatic forces, and mechanical shock is utilized for the theoretical investigation. Good agreement is found between simulation results and experimental data. Our results indicate that designing these new switches to respond quasi-statically to mechanical shock makes them robust against variations in shock shape and duration. More importantly, quasi-static operation makes the switches insensitive to variations in damping conditions. This can be promising to lower the cost of packaging for these switches since they can operate in atmospheric pressure with no hermetic sealing or costly package required.

Kinetic energy budget for electroconvective flows near ion selective membranes

NASA Astrophysics Data System (ADS)

Wang, Karen; Mani, Ali

2017-11-01

Electroconvection occurs when ions are driven from a bulk fluid through an ion-selective surface. When the driving voltage is beyond a threshold, this process undergoes a hydrodynamic instability called electroconvection, which can become chaotic due to nonlinear coupling between ion-transport, fluid flow, and electrostatic forces. Electroconvection significantly enhances ion transport and plays an important role in a wide range of electrochemical applications. We investigate this phenomenon by considering a canonical geometry consisting of a symmetric binary electrolyte between an ion-selective membrane and a reservoir using 2D direct numerical simulation (DNS). Our simulations reveal that for most practical regimes, DNS of electroconvection is expensive. Thus, a plan towards development of reduced-order models is necessary to facilitate the adoption of analysis of this phenomenon in industry. Here we use DNS to analyze the kinetic energy budget to shed light into the mechanisms sustaining flow and mixing in electroconvective flows. Our analysis reveals the relative dominance of kinetic energy sources, dissipation, and transport mechanisms sustaining electroconvection at different distances from the interface and over a wide range of input parameters. Karen Wang was supported by the National Defense Science & Engineering Graduate Fellowship (NDSEG). Ali Mani was supported by the National Science Foundation Award.

Characterization for the performance of capacitive switches activated by mechanical shock

PubMed Central

Younis, Mohammad I.; Alsaleem, Fadi M; Miles, Ronald; Su, Quang

2009-01-01

This paper presents experimental and theoretical investigation of a new concept of switches (triggers) that are actuated at or beyond a specific level of mechanical shock or acceleration. The principle of operation of the switches is based on dynamic pull-in instability induced by the combined interaction between electrostatic and mechanical shock forces. These switches can be tuned to be activated at various shock and acceleration thresholds by adjusting the DC voltage bias. Two commercial off-the-shelf capacitive accelerometers operating in air are tested under mechanical shock and electrostatic loading. A single-degree-of-freedom model accounting for squeeze-film damping, electrostatic forces, and mechanical shock is utilized for the theoretical investigation. Good agreement is found between simulation results and experimental data. Our results indicate that designing these new switches to respond quasi-statically to mechanical shock makes them robust against variations in shock shape and duration. More importantly, quasi-static operation makes the switches insensitive to variations in damping conditions. This can be promising to lower the cost of packaging for these switches since they can operate in atmospheric pressure with no hermetic sealing or costly package required. PMID:21720493

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Effects of van der Waals Force and Thermal Stresses on Pull-in Instability of Clamped Rectangular Microplates

PubMed Central

Batra, Romesh C.; Porfiri, Maurizio; Spinello, Davide

2008-01-01

We study the influence of von Kármán nonlinearity, van der Waals force, and thermal stresses on pull-in instability and small vibrations of electrostatically actuated microplates. We use the Galerkin method to develop a tractable reduced-order model for electrostatically actuated clamped rectangular microplates in the presence of van der Waals forces and thermal stresses. More specifically, we reduce the governing two-dimensional nonlinear transient boundary-value problem to a single nonlinear ordinary differential equation. For the static problem, the pull-in voltage and the pull-in displacement are determined by solving a pair of nonlinear algebraic equations. The fundamental vibration frequency corresponding to a deflected configuration of the microplate is determined by solving a linear algebraic equation. The proposed reduced-order model allows for accurately estimating the combined effects of van der Waals force and thermal stresses on the pull-in voltage and the pull-in deflection profile with an extremely limited computational effort. PMID:27879752

Effects of van der Waals Force and Thermal Stresses on Pull-in Instability of Clamped Rectangular Microplates.

PubMed

Batra, Romesh C; Porfiri, Maurizio; Spinello, Davide

2008-02-15

We study the influence of von Karman nonlinearity, van der Waals force, and a athermal stresses on pull-in instability and small vibrations of electrostatically actuated mi-croplates. We use the Galerkin method to develop a tractable reduced-order model for elec-trostatically actuated clamped rectangular microplates in the presence of van der Waals forcesand thermal stresses. More specifically, we reduce the governing two-dimensional nonlineartransient boundary-value problem to a single nonlinear ordinary differential equation. For thestatic problem, the pull-in voltage and the pull-in displacement are determined by solving apair of nonlinear algebraic equations. The fundamental vibration frequency corresponding toa deflected configuration of the microplate is determined by solving a linear algebraic equa-tion. The proposed reduced-order model allows for accurately estimating the combined effectsof van der Waals force and thermal stresses on the pull-in voltage and the pull-in deflectionprofile with an extremely limited computational effort.

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

NASA Astrophysics Data System (ADS)

Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Ismail, Razali

2018-05-01

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.

Phosphoinositide 5- and 3-phosphatase activities of a voltage-sensing phosphatase in living cells show identical voltage dependence

PubMed Central

Keum, Dongil; Kim, Dong-Il; Suh, Byung-Chang

2016-01-01

Voltage-sensing phosphatases (VSPs) are homologs of phosphatase and tensin homolog (PTEN), a phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] and phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P3] 3-phosphatase. However, VSPs have a wider range of substrates, cleaving 3-phosphate from PI(3,4)P2 and probably PI(3,4,5)P3 as well as 5-phosphate from phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] and PI(3,4,5)P3 in response to membrane depolarization. Recent proposals say these reactions have differing voltage dependence. Using Förster resonance energy transfer probes specific for different PIs in living cells with zebrafish VSP, we quantitate both voltage-dependent 5- and 3-phosphatase subreactions against endogenous substrates. These activities become apparent with different voltage thresholds, voltage sensitivities, and catalytic rates. As an analytical tool, we refine a kinetic model that includes the endogenous pools of phosphoinositides, endogenous phosphatase and kinase reactions connecting them, and four exogenous voltage-dependent 5- and 3-phosphatase subreactions of VSP. We show that apparent voltage threshold differences for seeing effects of the 5- and 3-phosphatase activities in cells are not due to different intrinsic voltage dependence of these reactions. Rather, the reactions have a common voltage dependence, and apparent differences arise only because each VSP subreaction has a different absolute catalytic rate that begins to surpass the respective endogenous enzyme activities at different voltages. For zebrafish VSP, our modeling revealed that 3-phosphatase activity against PI(3,4,5)P3 is 55-fold slower than 5-phosphatase activity against PI(4,5)P2; thus, PI(4,5)P2 generated more slowly from dephosphorylating PI(3,4,5)P3 might never accumulate. When 5-phosphatase activity was counteracted by coexpression of a phosphatidylinositol 4-phosphate 5-kinase, there was accumulation of PI(4,5)P2 in parallel to PI(3,4,5)P3 dephosphorylation, emphasizing that VSPs can cleave the 3-phosphate of PI(3,4,5)P3. PMID:27222577

Atomic physics effects on tokamak edge drift-tearing modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hahm, T.S.

1993-03-01

The effects of ionization and charge exchange on the linear stability of drift-tearing modes are analytically investigated. In particular, the linear instability threshold {Delta}{sup Th}, produced by ion sound wave coupling is modified. In the strongly collisional regime, the ionization breaks up the near cancellation of the perturbed electric field and the pressure gradient along the magnetic field, and increases the threshold. In the semi-collisional regime, both ionization and charge exchange act as drag on the ion parallel velocity, and consequently decrease the threshold by reducing the effectiveness of ion sound wave propagation.

Atomic physics effects on tokamak edge drift-tearing modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hahm, T.S.

1993-03-01

The effects of ionization and charge exchange on the linear stability of drift-tearing modes are analytically investigated. In particular, the linear instability threshold [Delta][sup Th], produced by ion sound wave coupling is modified. In the strongly collisional regime, the ionization breaks up the near cancellation of the perturbed electric field and the pressure gradient along the magnetic field, and increases the threshold. In the semi-collisional regime, both ionization and charge exchange act as drag on the ion parallel velocity, and consequently decrease the threshold by reducing the effectiveness of ion sound wave propagation.

Solution-processable alumina: PVP nanocomposite dielectric layer for high-performance organic thin-film transistors

NASA Astrophysics Data System (ADS)

Lin, Hui; Kong, Xiao; Li, Yiran; Kuang, Peng; Tao, Silu

2018-03-01

In this article, we have investigated the effect of nanocomposite gate dielectric layer built by alumina (Al2O3) and poly(4-vinyphenol) (PVP) with solution method which could enhance the dielectric capability and decrease the surface polarity. Then, we used modify layer to optimize the surface morphology of dielectric layer to further improve the insulation capability, and finally we fabricated the high-performance and low-voltage organic thin-film transistors by using this nanocomposite dielectric layer. The result shows that the devices with Al2O3:10%PVP dielectric layer with a modified layer exhibited a mobility of 0.49 cm2/Vs, I on/Ioff ratio of 7.8 × 104, threshold voltage of - 1.2 V, sub-threshold swing of 0.3 V/dec, and operating voltage as low as - 4 V. The improvement of devices performance was owing to the good insulation capability, appropriate capacitance of dielectric layer, and preferable interface contact, smaller crystalline size of active layer.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio andmore » good memory retention.« less

A novel method to predict current voltage characteristics of positive corona discharges based on a perturbation technique. I. Local analysis

NASA Astrophysics Data System (ADS)

Shibata, Hisaichi; Takaki, Ryoji

2017-11-01

A novel method to compute current-voltage characteristics (CVCs) of direct current positive corona discharges is formulated based on a perturbation technique. We use linearized fluid equations coupled with the linearized Poisson's equation. Townsend relation is assumed to predict CVCs apart from the linearization point. We choose coaxial cylinders as a test problem, and we have successfully predicted parameters which can determine CVCs with arbitrary inner and outer radii. It is also confirmed that the proposed method essentially does not induce numerical instabilities.

Virtual cathode emission of an annular cold cathode

NASA Astrophysics Data System (ADS)

Park, S.-d.; Kim, J.-h.; Han, J.; Yoon, M.; Park, S. Y.; Choi, D. W.; Shin, J. W.; So, J. H.

2009-11-01

Recent measurement of voltage V and current I of the electron gun of a relativistic klystron amplifier revealed that the resulting current-voltage relationship appeared to differ from the usual Child-Langmuir law (I∝V3/2) especially during the initial period of voltage increase. This paper attempts to explain this deviation by examining the emission mechanism using particle-in-cell simulation. The emission area in the cathode increased stepwise as the applied voltage increased and within each step the current and voltage followed the Child-Langmuir law. The electron emission began when the voltage reached a threshold, and the perveance increased with the emission area. Furthermore, an apparent virtual cathode was formed which was larger than the cathode tip. This occurs because, above a certain voltage, the emission from the edge and the side of the cathode surface dominates the emission from the front-end surface.

Crystalline ZrTiO{sub 4} gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Chao-Yi; Hsieh, Ching-Heng; Lee, Ching-Wei

2015-02-02

ZrTiO{sub 4} crystallized in orthorhombic (o-) phase was stacked with an amorphous Yb{sub 2}O{sub 3} interfacial layer as the gate dielectric for Si-based p-MOSFETs. With thermal annealing after gate electrode, the gate stack with equivalent oxide thickness (EOT) of 0.82 nm achieves high dielectric quality by showing a low interface trap density (D{sub it}) of 2.75 × 10{sup 11 }cm{sup −2}eV{sup −1} near the midgap and low oxide traps. Crystallization of ZrTiO{sub 4} and post metal annealing are also proven to introduce very limited amount of metal induced gap states or interfacial dipole. The p-MOSFETs exhibit good sub-threshold swing of 75 mV/dec which is ascribedmore » to the low D{sub it} value and small EOT. Owing to the Y{sub 2}O{sub 3} interfacial layer and smooth interface with Si substrate that, respectively, suppress phonon and surface roughness scattering, the p-MOSFETs also display high hole mobility of 49 cm{sup 2}/V-s at 1 MV/cm. In addition, I{sub on}/I{sub off} ratio larger than 10{sup 6} is also observed. From the reliability evaluation by negative bias temperature instability test, after stressing with an electric field of −10 MV/cm at 85 °C for 1000 s, satisfactory threshold voltage shift of 12 mV and sub-threshold swing degradation of 3% were obtained. With these promising characteristics, the Yb{sub 2}O{sub 3}/o-ZrTiO{sub 4} gate stack holds the great potential for next-generation electronics.« less

Device and material characterization and analytic modeling of amorphous silicon thin film transistors

NASA Astrophysics Data System (ADS)

Slade, Holly Claudia

Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be modeled using a transmission line model, which is implemented using a small signal circuit with access resistors in series with the source and drain capacitances. This correctly reproduces the frequency dispersion in the TFT. Automatic parameter extraction routines are provided and are used to test the robustness of the model on a variety of devices from different research laboratories. The results demonstrate excellent agreement, showing that the model is suitable for device design, scaling, and implementation in the manufacturing process.

Spike-Threshold Adaptation Predicted by Membrane Potential Dynamics In Vivo

PubMed Central

Fontaine, Bertrand; Peña, José Luis; Brette, Romain

2014-01-01

Neurons encode information in sequences of spikes, which are triggered when their membrane potential crosses a threshold. In vivo, the spiking threshold displays large variability suggesting that threshold dynamics have a profound influence on how the combined input of a neuron is encoded in the spiking. Threshold variability could be explained by adaptation to the membrane potential. However, it could also be the case that most threshold variability reflects noise and processes other than threshold adaptation. Here, we investigated threshold variation in auditory neurons responses recorded in vivo in barn owls. We found that spike threshold is quantitatively predicted by a model in which the threshold adapts, tracking the membrane potential at a short timescale. As a result, in these neurons, slow voltage fluctuations do not contribute to spiking because they are filtered by threshold adaptation. More importantly, these neurons can only respond to input spikes arriving together on a millisecond timescale. These results demonstrate that fast adaptation to the membrane potential captures spike threshold variability in vivo. PMID:24722397

Cyclone–anticyclone vortex asymmetry mechanism and linear Ekman friction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chefranov, S. G., E-mail: schefranov@mail.ru

2016-04-15

Allowance for the linear Ekman friction has been found to ensure a threshold (in rotation frequency) realization of the linear dissipative–centrifugal instability and the related chiral symmetry breaking in the dynamics of Lagrangian particles, which leads to the cyclone–anticyclone vortex asymmetry. An excess of the fluid rotation rate ω{sub 0} over some threshold value determined by the fluid eigenfrequency ω (i.e., ω{sub 0} > ω) is shown to be a condition for the realization of such an instability. A new generalization of the solution of the Karman problem to determine the steady-state velocity field in a viscous incompressible fluid abovemore » a rotating solid disk of large radius, in which the linear Ekman friction was additionally taken into account, has been obtained. A correspondence of this solution and the conditions for the realization of the dissipative–centrifugal instability of a chiral-symmetric vortex state and the corresponding cyclone–anticyclone vortex asymmetry has been shown. A generalization of the well-known spiral velocity distribution in an “Ekman layer” near a solid surface has been established for the case where the fluid rotation frequency far from the disk ω differs from the disk rotation frequency ω{sub 0}.« less

Effects of mucosal loading on vocal fold vibration.

PubMed

Tao, Chao; Jiang, Jack J

2009-06-01

A chain model was proposed in this study to examine the effects of mucosal loading on vocal fold vibration. Mucosal loading was defined as the loading caused by the interaction between the vocal folds and the surrounding tissue. In the proposed model, the vocal folds and the surrounding tissue were represented by a series of oscillators connected by a coupling spring. The lumped masses, springs, and dampers of the oscillators modeled the tissue properties of mass, stiffness, and viscosity, respectively. The coupling spring exemplified the tissue interactions. By numerically solving this chain model, the effects of mucosal loading on the phonation threshold pressure, phonation instability pressure, and energy distribution in a voice production system were studied. It was found that when mucosal loading is small, phonation threshold pressure increases with the damping constant R(r), the mass constant R(m), and the coupling constant R(mu) of mucosal loading but decreases with the stiffness constant R(k). Phonation instability pressure is also related to mucosal loading. It was found that phonation instability pressure increases with the coupling constant R(mu) but decreases with the stiffness constant R(k) of mucosal loading. Therefore, it was concluded that mucosal loading directly affects voice production.

Effects of mucosal loading on vocal fold vibration

NASA Astrophysics Data System (ADS)

Tao, Chao; Jiang, Jack J.

2009-06-01

A chain model was proposed in this study to examine the effects of mucosal loading on vocal fold vibration. Mucosal loading was defined as the loading caused by the interaction between the vocal folds and the surrounding tissue. In the proposed model, the vocal folds and the surrounding tissue were represented by a series of oscillators connected by a coupling spring. The lumped masses, springs, and dampers of the oscillators modeled the tissue properties of mass, stiffness, and viscosity, respectively. The coupling spring exemplified the tissue interactions. By numerically solving this chain model, the effects of mucosal loading on the phonation threshold pressure, phonation instability pressure, and energy distribution in a voice production system were studied. It was found that when mucosal loading is small, phonation threshold pressure increases with the damping constant Rr, the mass constant Rm, and the coupling constant Rμ of mucosal loading but decreases with the stiffness constant Rk. Phonation instability pressure is also related to mucosal loading. It was found that phonation instability pressure increases with the coupling constant Rμ but decreases with the stiffness constant Rk of mucosal loading. Therefore, it was concluded that mucosal loading directly affects voice production.

Onset of magnetic reconnection in a weakly collisional, high- β plasma

NASA Astrophysics Data System (ADS)

Alt, Andrew; Kunz, Matthew

2017-10-01

In a magnetized, weakly collisional plasma, the magnetic moment of the constituent particles is an adiabatic invariant. An increase of the magnetic-field strength in such a plasma thus leads to an increase in the thermal pressure perpendicular to the field lines. Above a β-dependent threshold, this pressure anisotropy drives the mirror instability, which produces strong distortions in the field lines and traps particles on ion-Larmor scales. The impact of this instability on magnetic reconnection is investigated using simple analytical and numerical models for the formation of a current sheet and the associated production of pressure anisotropy. The difficulty in maintaining an isotropic, Maxwellian particle distribution during the formation and subsequent thinning of a current sheet in a weakly collisional plasma, coupled with the low threshold for the mirror instability in a high- β plasma, imply that the topology of reconnecting magnetic fields can radically differ from the standard Harris-sheet profile often used in kinetic simulations of collisionless reconnection. Depending on the rate of current-sheet formation, this mirror-induced disruption may occur before standard tearing modes are able to develop. This work was supported by U.S. DOE contract DE-AC02-09CH11466.

Multimode Regimes in Quantum Cascade Lasers: From Coherent Instabilities to Spatial Hole Burning

DTIC Science & Technology

2009-02-10

from which absorption can take place; and although not very significant, there is always bulk n2 of the material. 1 A. E. Siegman , Lasers ...2007 4. TI11.E AND SUBTITI..E 5a. CONTRACT NUMBER Multimode regimes in quantum cascade lasers : from coherent W91INF-04-I-0253 instabilities to spatial...quantum cascade lasers (QCLs). In narrow devices it is found that above a second threshold the laser spectrwn dramatically broadens showing multimode

AC electrified jets in a flow-focusing device: Jet length scaling

PubMed Central

García-Sánchez, Pablo; Alzaga-Gimeno, Javier; Baret, Jean-Christophe

2016-01-01

We use a microfluidic flow-focusing device with integrated electrodes for controlling the production of water-in-oil drops. In a previous work, we reported that very long jets can be formed upon application of AC fields. We now study in detail the appearance of the long jets as a function of the electrical parameters, i.e., water conductivity, signal frequency, and voltage amplitude. For intermediate frequencies, we find a threshold voltage above which the jet length rapidly increases. Interestingly, this abrupt transition vanishes for high frequencies of the signal and the jet length grows smoothly with voltage. For frequencies below a threshold value, we previously reported a transition from a well-behaved uniform jet to highly unstable liquid structures in which axisymmetry is lost rather abruptly. These liquid filaments eventually break into droplets of different sizes. In this work, we characterize this transition with a diagram as a function of voltage and liquid conductivity. The electrical response of the long jets was studied via a distributed element circuit model. The model allows us to estimate the electric potential at the tip of the jet revealing that, for any combination of the electrical parameters, the breakup of the jet occurs at a critical value of this potential. We show that this voltage is around 550 V for our device geometry and choice of flow rates. PMID:27375826

AC electrified jets in a flow-focusing device: Jet length scaling.

PubMed

Castro-Hernández, Elena; García-Sánchez, Pablo; Alzaga-Gimeno, Javier; Tan, Say Hwa; Baret, Jean-Christophe; Ramos, Antonio

2016-07-01

We use a microfluidic flow-focusing device with integrated electrodes for controlling the production of water-in-oil drops. In a previous work, we reported that very long jets can be formed upon application of AC fields. We now study in detail the appearance of the long jets as a function of the electrical parameters, i.e., water conductivity, signal frequency, and voltage amplitude. For intermediate frequencies, we find a threshold voltage above which the jet length rapidly increases. Interestingly, this abrupt transition vanishes for high frequencies of the signal and the jet length grows smoothly with voltage. For frequencies below a threshold value, we previously reported a transition from a well-behaved uniform jet to highly unstable liquid structures in which axisymmetry is lost rather abruptly. These liquid filaments eventually break into droplets of different sizes. In this work, we characterize this transition with a diagram as a function of voltage and liquid conductivity. The electrical response of the long jets was studied via a distributed element circuit model. The model allows us to estimate the electric potential at the tip of the jet revealing that, for any combination of the electrical parameters, the breakup of the jet occurs at a critical value of this potential. We show that this voltage is around 550 V for our device geometry and choice of flow rates.

A transverse separate-spin-evolution streaming instability

NASA Astrophysics Data System (ADS)

Iqbal, Z.; Andreev, Pavel A.; Murtaza, G.

2018-05-01

By using the separate spin evolution quantum hydrodynamical model, the instability of transverse mode due to electron streaming in a partially spin polarized magnetized degenerate plasma is studied. The electron spin polarization gives birth to a new spin-dependent wave (i.e., separate spin evolution streaming driven ordinary wave) in the real wave spectrum. It is shown that the spin polarization and streaming speed significantly affect the frequency of this new mode. Analyzing growth rate, it is found that the electron spin effects reduce the growth rate and shift the threshold of instability as well as its termination point towards higher values. Additionally, how the other parameters like electron streaming and Fermi pressure influence the growth rate is also investigated. Current study can help towards better understanding of the existence of new waves and streaming instability in the astrophysical plasmas.

Volume nanograting formation in laser-silica interaction as a result of the 1D plasma-resonance ionization instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gildenburg, V. B., E-mail: gil@appl.sci-nnov.ru; Pavlichenko, I. A.; Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod 603950

2016-08-15

The initial stage of the small-scale ionization-induced instability developing inside the fused silica volume exposed to the femtosecond laser pulse is studied as a possible initial cause of the self-organized nanograting formation. We have calculated the spatial spectra of the instability with the electron-hole diffusion taken into account for the first time and have found that it results in the formation of some hybrid (diffusion-wave) 1D structure with the spatial period determined as the geometrical mean of the laser wavelength and characteristic diffusion length of the process considered. Near the threshold of the instability, this period occurs to be approximatelymore » equal to the laser half-wavelength in the silica, close to the one experimentally observed.« less

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE PAGES

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

2016-07-21

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

New design of a passive type RADFET reader for enhanced sensitivity

NASA Astrophysics Data System (ADS)

Lee, Dae-Hee

2016-07-01

We present a new design of a passive type RADFET reader with enhanced radiation sensitivity. Using a electostatic plate, we have applied a static electric field to the gate voltage, which impacts a positive biasing on the p-type MOSFET. The resultant effect shows that 1.8 times of radiation sensitivity increased when we measured the threshold voltage shift of the RADFET exposed to 30 krad irradiation. We discuss further about the characteristic changes of a RADFET according to the positive biasing on the gate voltage.

[Patterns of action potential firing in cortical neurons of neonatal mice and their electrophysiological property].

PubMed

Furong, Liu; Shengtian, L I

2016-05-25

To investigate patterns of action potential firing in cortical heurons of neonatal mice and their electrophysiological properties. The passive and active membrane properties of cortical neurons from 3-d neonatal mice were observed by whole-cell patch clamp with different voltage and current mode. Three patterns of action potential firing were identified in response to depolarized current injection. The effects of action potential firing patterns on voltage-dependent inward and outward current were found. Neurons with three different firing patterns had different thresholds of depolarized current. In the morphology analysis of action potential, the three type neurons were different in rise time, duration, amplitude and threshold of the first action potential evoked by 80 pA current injection. The passive properties were similar in three patterns of action potential firing. These results indicate that newborn cortical neurons exhibit different patterns of action potential firing with different action potential parameters such as shape and threshold.

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Qi; Cai, Jing; Li, Yun; Shi, Yi; Wang, Xizhang; Hu, Zheng

2014-06-01

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from -20.4 V to -0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

Oscillating two-stream instability in a magnetized electron-positron-ion plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tinakiche, Nouara; Faculty of Physics, U.S.T.H.B, Algiers 16111; Annou, R.

2015-04-15

Oscillating two-stream instability (OTSI) in a magnetized electron-ion plasma has been thoroughly studied, e.g., in ionospheric heating experiments [C. S. Liu and V. K. Tripathi, Interaction of Electromagnetic Waves With Electron Beams and Plasmas (World Scientific, 1994); V. K. Tripathi and P. V. Siva Rama Prasad, J. Plasma Phys. 41, 13 (1989); K. Ramachandran and V. K. Tripathi, IEEE Trans. Plasma Sci. 25, 423 (1997)]. In this paper, OTSI is investigated in a magnetized electron-positron-ion plasma. The dispersion relation of the process is established. The pump field threshold, along with the maximum growth rate of the instability is assessed usingmore » the Arecibo and HAARP parameters.« less

Oscillating two-stream instability in a magnetized electron-positron-ion plasma

NASA Astrophysics Data System (ADS)

Tinakiche, Nouara; Annou, R.

2015-04-01

Oscillating two-stream instability (OTSI) in a magnetized electron-ion plasma has been thoroughly studied, e.g., in ionospheric heating experiments [C. S. Liu and V. K. Tripathi, Interaction of Electromagnetic Waves With Electron Beams and Plasmas (World Scientific, 1994); V. K. Tripathi and P. V. Siva Rama Prasad, J. Plasma Phys. 41, 13 (1989); K. Ramachandran and V. K. Tripathi, IEEE Trans. Plasma Sci. 25, 423 (1997)]. In this paper, OTSI is investigated in a magnetized electron-positron-ion plasma. The dispersion relation of the process is established. The pump field threshold, along with the maximum growth rate of the instability is assessed using the Arecibo and HAARP parameters.

Rayleigh-Taylor instability in accelerated elastic-solid slabs

NASA Astrophysics Data System (ADS)

Piriz, S. A.; Piriz, A. R.; Tahir, N. A.

2017-12-01

We develop the linear theory for the asymptotic growth of the incompressible Rayleigh-Taylor instability of an accelerated solid slab of density ρ2, shear modulus G , and thickness h , placed over a semi-infinite ideal fluid of density ρ1<ρ2 . It extends previous results for Atwood number AT=1 [B. J. Plohr and D. H. Sharp, Z. Angew. Math. Phys. 49, 786 (1998), 10.1007/s000330050121] to arbitrary values of AT and unveil the singular feature of an instability threshold below which the slab is stable for any perturbation wavelength. As a consequence, an accelerated elastic-solid slab is stable if ρ2g h /G ≤2 (1 -AT) /AT .

Voltage and pace-capture mapping of linear ablation lesions overestimates chronic ablation gap size.

PubMed

O'Neill, Louisa; Harrison, James; Chubb, Henry; Whitaker, John; Mukherjee, Rahul K; Bloch, Lars Ølgaard; Andersen, Niels Peter; Dam, Høgni; Jensen, Henrik K; Niederer, Steven; Wright, Matthew; O'Neill, Mark; Williams, Steven E

2018-04-26

Conducting gaps in lesion sets are a major reason for failure of ablation procedures. Voltage mapping and pace-capture have been proposed for intra-procedural identification of gaps. We aimed to compare gap size measured acutely and chronically post-ablation to macroscopic gap size in a porcine model. Intercaval linear ablation was performed in eight Göttingen minipigs with a deliberate gap of ∼5 mm left in the ablation line. Gap size was measured by interpolating ablation contact force values between ablation tags and thresholding at a low force cut-off of 5 g. Bipolar voltage mapping and pace-capture mapping along the length of the line were performed immediately, and at 2 months, post-ablation. Animals were euthanized and gap sizes were measured macroscopically. Voltage thresholds to define scar were determined by receiver operating characteristic analysis as <0.56 mV (acutely) and <0.62 mV (chronically). Taking the macroscopic gap size as gold standard, error in gap measurements were determined for voltage, pace-capture, and ablation contact force maps. All modalities overestimated chronic gap size, by 1.4 ± 2.0 mm (ablation contact force map), 5.1 ± 3.4 mm (pace-capture), and 9.5 ± 3.8 mm (voltage mapping). Error on ablation contact force map gap measurements were significantly less than for voltage mapping (P = 0.003, Tukey's multiple comparisons test). Chronically, voltage mapping and pace-capture mapping overestimated macroscopic gap size by 11.9 ± 3.7 and 9.8 ± 3.5 mm, respectively. Bipolar voltage and pace-capture mapping overestimate the size of chronic gap formation in linear ablation lesions. The most accurate estimation of chronic gap size was achieved by analysis of catheter-myocardium contact force during ablation.

The delayed rectifier potassium conductance in the sarcolemma and the transverse tubular system membranes of mammalian skeletal muscle fibers

PubMed Central

DiFranco, Marino; Quinonez, Marbella

2012-01-01

A two-microelectrode voltage clamp and optical measurements of membrane potential changes at the transverse tubular system (TTS) were used to characterize delayed rectifier K currents (IKV) in murine muscle fibers stained with the potentiometric dye di-8-ANEPPS. In intact fibers, IKV displays the canonical hallmarks of KV channels: voltage-dependent delayed activation and decay in time. The voltage dependence of the peak conductance (gKV) was only accounted for by double Boltzmann fits, suggesting at least two channel contributions to IKV. Osmotically treated fibers showed significant disconnection of the TTS and displayed smaller IKV, but with similar voltage dependence and time decays to intact fibers. This suggests that inactivation may be responsible for most of the decay in IKV records. A two-channel model that faithfully simulates IKV records in osmotically treated fibers comprises a low threshold and steeply voltage-dependent channel (channel A), which contributes ∼31% of gKV, and a more abundant high threshold channel (channel B), with shallower voltage dependence. Significant expression of the IKV1.4 and IKV3.4 channels was demonstrated by immunoblotting. Rectangular depolarizing pulses elicited step-like di-8-ANEPPS transients in intact fibers rendered electrically passive. In contrast, activation of IKV resulted in time- and voltage-dependent attenuations in optical transients that coincided in time with the peaks of IKV records. Normalized peak attenuations showed the same voltage dependence as peak IKV plots. A radial cable model including channels A and B and K diffusion in the TTS was used to simulate IKV and average TTS voltage changes. Model predictions and experimental data were compared to determine what fraction of gKV in the TTS accounted simultaneously for the electrical and optical data. Best predictions suggest that KV channels are approximately equally distributed in the sarcolemma and TTS membranes; under these conditions, >70% of IKV arises from the TTS. PMID:22851675

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Standard deviation index for stimulated Brillouin scattering suppression with different homogeneities.

PubMed

Ran, Yang; Su, Rongtao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Si, Lei

2016-05-10

We present a new quantitative index of standard deviation to measure the homogeneity of spectral lines in a fiber amplifier system so as to find the relation between the stimulated Brillouin scattering (SBS) threshold and the homogeneity of the corresponding spectral lines. A theoretical model is built and a simulation framework has been established to estimate the SBS threshold when input spectra with different homogeneities are set. In our experiment, by setting the phase modulation voltage to a constant value and the modulation frequency to different values, spectral lines with different homogeneities can be obtained. The experimental results show that the SBS threshold increases negatively with the standard deviation of the modulated spectrum, which is in good agreement with the theoretical results. When the phase modulation voltage is confined to 10 V and the modulation frequency is set to 80 MHz, the standard deviation of the modulated spectrum equals 0.0051, which is the lowest value in our experiment. Thus, at this time, the highest SBS threshold has been achieved. This standard deviation can be a good quantitative index in evaluating the power scaling potential in a fiber amplifier system, which is also a design guideline in suppressing the SBS to a better degree.

Auditory sensitivity may require dynamically unstable spike generators: evidence from a model of electrical stimulation.

PubMed

O'Gorman, David E; Colburn, H Steven; Shera, Christopher A

2010-11-01

The response of the auditory nerve to electrical stimulation is highly sensitive to small modulations (<0.5%). This report demonstrates that dynamical instability (i.e., a positive Lyapunov exponent) can account for this sensitivity in a modified FitzHugh-Nagumo model of spike generation, so long as the input noise is not too large. This finding suggests both that spike generator instability is necessary to account for auditory nerve sensitivity and that the amplitude of physiological noise, such as that produced by the random behavior of voltage-gated sodium channels, is small. Based on these results with direct electrical stimulation, it is hypothesized that spike generator instability may be the mechanism that reconciles high sensitivity with the cross-fiber independence observed under acoustic stimulation.

Electrical engineering unit for the reactive power control of the load bus at the voltage instability

NASA Astrophysics Data System (ADS)

Kotenev, A. V.; Kotenev, V. I.; Kochetkov, V. V.; Elkin, D. A.

2018-01-01

For the purpose of reactive power control error reduction and decrease of the voltage sags in the electric power system caused by the asynchronous motors started the mathematical model of the load bus was developed. The model was built up of the sub-models of the following elements: a transformer, a transmission line, a synchronous and an asynchronous loads and a capacitor bank load, and represents the automatic reactive power control system taking into account electromagnetic processes of the asynchronous motors started and reactive power changing of the electric power system elements caused by the voltage fluctuation. The active power/time and reactive power/time characteristics based on the recommended procedure of the equivalent electric circuit parameters calculation were obtained. The derived automatic reactive power control system was shown to eliminate the voltage sags in the electric power system caused by the asynchronous motors started.

Characterization of chaotic electroconvection near flat electrodes under oscillatory voltages

NASA Astrophysics Data System (ADS)

Kim, Jeonglae; Davidson, Scott; Mani, Ali

2017-11-01

Onset of hydrodynamic instability and chaotic electroconvection in aqueous systems are studied by directly solving the two-dimensional coupled Poisson-Nernst-Planck and Navier-Stokes equations. An aqueous binary electrolyte is bounded by two planar electrodes where time-harmonic voltage is applied at a constant oscillation frequency. The governing equations are solved using a fully-conservative second-order-accurate finite volume discretization and a second-order implicit Euler time advancement. At a sufficiently high amplitude of applied voltage, the system exhibits chaotic behaviors involving strong hydrodynamic mixing and enhanced electroconvection. The system responses are characterized as a function of oscillation frequency, voltage magnitude, and the ratio of diffusivities of two ion species. Our results indicate that electroconvection is most enhanced for frequencies on the order of inverse system RC time scale. We will discuss the dependence of this optimal frequency on the asymmetry of the diffusion coefficients of ionic species. Supported by the Stanford's Precourt Institute.

Bet-hedging as a complex interaction among developmental instability, environmental heterogeneity, dispersal, and life-history strategy.

PubMed

Scheiner, Samuel M

2014-02-01

One potential evolutionary response to environmental heterogeneity is the production of randomly variable offspring through developmental instability, a type of bet-hedging. I used an individual-based, genetically explicit model to examine the evolution of developmental instability. The model considered both temporal and spatial heterogeneity alone and in combination, the effect of migration pattern (stepping stone vs. island), and life-history strategy. I confirmed that temporal heterogeneity alone requires a threshold amount of variation to select for a substantial amount of developmental instability. For spatial heterogeneity only, the response to selection on developmental instability depended on the life-history strategy and the form and pattern of dispersal with the greatest response for island migration when selection occurred before dispersal. Both spatial and temporal variation alone select for similar amounts of instability, but in combination resulted in substantially more instability than either alone. Local adaptation traded off against bet-hedging, but not in a simple linear fashion. I found higher-order interactions between life-history patterns, dispersal rates, dispersal patterns, and environmental heterogeneity that are not explainable by simple intuition. We need additional modeling efforts to understand these interactions and empirical tests that explicitly account for all of these factors.

Majority of Solar Wind Intervals Support Ion-Driven Instabilities

NASA Astrophysics Data System (ADS)

Klein, K. G.; Alterman, B. L.; Stevens, M. L.; Vech, D.; Kasper, J. C.

2018-05-01

We perform a statistical assessment of solar wind stability at 1 AU against ion sources of free energy using Nyquist's instability criterion. In contrast to typically employed threshold models which consider a single free-energy source, this method includes the effects of proton and He2 + temperature anisotropy with respect to the background magnetic field as well as relative drifts between the proton core, proton beam, and He2 + components on stability. Of 309 randomly selected spectra from the Wind spacecraft, 53.7% are unstable when the ion components are modeled as drifting bi-Maxwellians; only 4.5% of the spectra are unstable to long-wavelength instabilities. A majority of the instabilities occur for spectra where a proton beam is resolved. Nearly all observed instabilities have growth rates γ slower than instrumental and ion-kinetic-scale timescales. Unstable spectra are associated with relatively large He2 + drift speeds and/or a departure of the core proton temperature from isotropy; other parametric dependencies of unstable spectra are also identified.

Kinetic effects on the velocity-shear-driven instability

NASA Technical Reports Server (NTRS)

Wang, Z.; Pritchett, P. L.; Ashour-Abdalla, M.

1992-01-01

A comparison is made between the properties of the low-frequency long-wavelength velocity-shear-driven instability in kinetic theory and magnetohydrodynamics (MHD). The results show that the removal of adiabaticity along the magnetic field line in kinetic theory leads to modifications in the nature of the instability. Although the threshold for the instability in the two formalisms is the same, the kinetic growth rate and the unstable range in wave-number space can be larger or smaller than the MHD values depending on the ratio between the thermal speed, Alfven speed, and flow speed. When the thermal speed is much larger than the flow speed and the flow speed is larger than the Alfven speed, the kinetic formalism gives a larger maximum growth rate and broader unstable range in wave-number space. In this regime, the normalized wave number for instability can be larger than unity, while in MHD it is always less than unity. The normal mode profile in the kinetic case has a wider spatial extent across the shear layer.

Farley-Buneman Instability in the Solar Chromosphere

NASA Astrophysics Data System (ADS)

Gogoberidze, G.; Voitenko, Y.; Poedts, S.; Goossens, M.

2009-11-01

The Farley-Buneman instability (FBI) is studied in the partially ionized plasma of the solar chromosphere taking into account the finite magnetization of the ions and Coulomb collisions. We obtain the threshold value for the relative velocity between ions and electrons necessary for the instability to develop. It is shown that Coulomb collisions play a destabilizing role in the sense that they enable the instability even in the regions where the ion magnetization is larger than unity. By applying these results to chromospheric conditions, we show that the FBI cannot be responsible for the quasi-steady heating of the solar chromosphere. However, we do not exclude the instability development locally in the presence of strong cross-field currents and/or strong small-scale magnetic fields. In such cases, FBI should produce locally small-scale, ~0.1-3 m, density irregularities in the solar chromosphere. These irregularities can cause scintillations of radio waves with similar wave lengths and provide a tool for remote chromospheric sensing.

FARLEY-BUNEMAN INSTABILITY IN THE SOLAR CHROMOSPHERE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gogoberidze, G.; Voitenko, Y.; Poedts, S.

2009-11-20

The Farley-Buneman instability (FBI) is studied in the partially ionized plasma of the solar chromosphere taking into account the finite magnetization of the ions and Coulomb collisions. We obtain the threshold value for the relative velocity between ions and electrons necessary for the instability to develop. It is shown that Coulomb collisions play a destabilizing role in the sense that they enable the instability even in the regions where the ion magnetization is larger than unity. By applying these results to chromospheric conditions, we show that the FBI cannot be responsible for the quasi-steady heating of the solar chromosphere. However,more » we do not exclude the instability development locally in the presence of strong cross-field currents and/or strong small-scale magnetic fields. In such cases, FBI should produce locally small-scale, approx0.1-3 m, density irregularities in the solar chromosphere. These irregularities can cause scintillations of radio waves with similar wave lengths and provide a tool for remote chromospheric sensing.« less

Direct Numerical Simulation of Transition Due to Traveling Crossflow Vortices

NASA Technical Reports Server (NTRS)

Li, Fei; Choudhari, Meelan M.; Duan, Lian

2016-01-01

Previous simulations of laminar breakdown mechanisms associated with stationary crossflow instability over a realistic swept-wing configuration are extended to investigate the alternate scenario of transition due to secondary instability of traveling crossflow modes. Earlier analyses based on secondary instability theory and parabolized stability equations have shown that this alternate scenario is viable when the initial amplitude of the most amplified mode of the traveling crossflow instability is greater than approximately 0.03 times the initial amplitude of the most amplified stationary mode. The linear growth predictions based on the secondary instability theory and parabolized stability equations agree well with the direct numerical simulation. Nonlinear effects are initially stabilizing but subsequently lead to a rapid growth followed by the onset of transition when the amplitude of the secondary disturbance exceeds a threshold value. Similar to the breakdown of stationary vortices, the transition zone is rather short and the boundary layer becomes completely turbulent across a distance of less than 15 times the boundary layer thickness at the completion of transition.

Majority of Solar Wind Intervals Support Ion-Driven Instabilities.

PubMed

Klein, K G; Alterman, B L; Stevens, M L; Vech, D; Kasper, J C

2018-05-18

We perform a statistical assessment of solar wind stability at 1 AU against ion sources of free energy using Nyquist's instability criterion. In contrast to typically employed threshold models which consider a single free-energy source, this method includes the effects of proton and He^{2+} temperature anisotropy with respect to the background magnetic field as well as relative drifts between the proton core, proton beam, and He^{2+} components on stability. Of 309 randomly selected spectra from the Wind spacecraft, 53.7% are unstable when the ion components are modeled as drifting bi-Maxwellians; only 4.5% of the spectra are unstable to long-wavelength instabilities. A majority of the instabilities occur for spectra where a proton beam is resolved. Nearly all observed instabilities have growth rates γ slower than instrumental and ion-kinetic-scale timescales. Unstable spectra are associated with relatively large He^{2+} drift speeds and/or a departure of the core proton temperature from isotropy; other parametric dependencies of unstable spectra are also identified.

Relation of the runaway avalanche threshold to momentum space topology

NASA Astrophysics Data System (ADS)

McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

2018-02-01

The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

NASA Technical Reports Server (NTRS)

Agrawal, Govind P.; Goorjian, Peter M.

1998-01-01

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

Experimental investigation of the transverse modal instabilities onset in high power fully-aperiodic-large-pitch fiber lasers

NASA Astrophysics Data System (ADS)

Malleville, Marie-Alicia; Benoît, Aurélien; Dauliat, Romain; Leconte, Baptiste; Darwich, Dia; du Jeu, Rémi; Jamier, Raphaël.; Schwuchow, Anka; Schuster, Kay; Roy, Philippe

2018-02-01

Over the last decade, significant work has been carried out in order to increase the energy/peak power provided by fiber lasers. Indeed, new microstructured fibers with large (or very large) mode area cores (LMA) such as Distributed Mode Filtering (DMF) fibers and Large-Pitch Fibers (LPF) have been developed to address this concern. These technologies have allowed diffraction-limited emission with core diameters higher than 80 μm, and have state-of-the-art performances in terms of pulse energy or peak power while keeping an excellent spatial beam quality. Although these fibers were designed to reach high power levels while maintaining a single transverse mode propagation, power scaling becomes quickly limited by the onset of transverse modal instabilities (TMI). This effect suddenly arises when a certain average power threshold is exceeded, drastically degrading the emitted beam quality. In this work, we investigate the influence of the core dimensions and the refractive index mismatch between the active core and the background cladding material, on the TMI power threshold in rod-type Fully-Aperiodic-LPF. This fiber structure was specifically designed to enhance the higher-order modes (HOMs) delocalization out of the gain region and thus push further the onset of modal instabilities. Using a 400W pump diode at 976 nm, the power scaling, as well as the spatial beam quality and its temporal behavior were investigated in laser configuration, which theoretically provides a lower TMI power threshold than the amplifier one due to the lack of selective excitation of the fundamental mode.

Self similarities in desalination dynamics and performance using capacitive deionization.

PubMed

Ramachandran, Ashwin; Hemmatifar, Ali; Hawks, Steven A; Stadermann, Michael; Santiago, Juan G

2018-09-01

Charge transfer and mass transport are two underlying mechanisms which are coupled in desalination dynamics using capacitive deionization (CDI). We developed simple reduced-order models based on a mixed reactor volume principle which capture the coupled dynamics of CDI operation using closed-form semi-analytical and analytical solutions. We use the models to identify and explore self-similarities in the dynamics among flow rate, current, and voltage for CDI cell operation including both charging and discharging cycles. The similarity approach identifies the specific combination of cell (e.g. capacitance, resistance) and operational parameters (e.g. flow rate, current) which determine a unique effluent dynamic response. We here demonstrate self-similarity using a conventional flow between CDI (fbCDI) architecture, and we hypothesize that our similarity approach has potential application to a wide range of designs. We performed an experimental study of these dynamics and used well-controlled experiments of CDI cell operation to validate and explore limits of the model. For experiments, we used a CDI cell with five electrode pairs and a standard flow between (electrodes) architecture. Guided by the model, we performed a series of experiments that demonstrate natural response of the CDI system. We also identify cell parameters and operation conditions which lead to self-similar dynamics under a constant current forcing function and perform a series of experiments by varying flowrate, currents, and voltage thresholds to demonstrate self-similarity. Based on this study, we hypothesize that the average differential electric double layer (EDL) efficiency (a measure of ion adsorption rate to EDL charging rate) is mainly dependent on user-defined voltage thresholds, whereas flow efficiency (measure of how well desalinated water is recovered from inside the cell) depends on cell volumes flowed during charging, which is determined by flowrate, current and voltage thresholds. Results of experiments strongly support this hypothesis. Results show that cycle efficiency and salt removal for a given flowrate and current are maximum when average EDL and flow efficiencies are approximately equal. We further explored a range of CC operations with varying flowrates, currents, and voltage thresholds using our similarity variables to highlight trade-offs among salt removal, energy, and throughput performance. Copyright © 2018 Elsevier Ltd. All rights reserved.

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Tunneling contact IGZO TFTs with reduced saturation voltages

NASA Astrophysics Data System (ADS)

Wang, Longyan; Sun, Yin; Zhang, Xintong; Zhang, Lining; Zhang, Shengdong; Chan, Mansun

2017-04-01

We report a tunneling contact indium-gallium-zinc oxide (IGZO) thin film transistor (TFT) with a graphene interlayer technique in this paper. A Schottky junction is realized between a metal and IGZO with a graphene interlayer, leading to a quantum tunneling of the TFT transport in saturation regions. This tunneling contact enables a significant reduction in the saturation drain voltage Vdsat compared to that of the thermionic emission TFTs, which is usually equal to the gate voltage minus their threshold voltages. Measured temperature independences of the subthreshold swing confirm a transition from the thermionic emission to quantum tunneling transports depending on the gate bias voltages in the proposed device. The tunneling contact TFTs with the graphene interlayer have implications to reduce the power consumptions of certain applications such as the active matrix OLED display.

Evaluation of performance of footwear and flooring systems in combination with personnel using voltage probability analysis

NASA Astrophysics Data System (ADS)

Smallwood, Jeremy; Swenson, David E.

2011-06-01

Evaluation of electrostatic performance of footwear and flooring in combination is necessary in applications such as electrostatic discharge (ESD) control in electronics manufacture, evaluation of equipment for avoidance of factory process electrostatic ignition risks and avoidance of electrostatic shocks to personnel in working environments. Typical standards use a walking test in which the voltage produced on a subject is evaluated by identification and measurement of the magnitude of the 5 highest "peaks" and "valleys" of the recorded voltage waveform. This method does not lend itself to effective analysis of the risk that the voltage will exceed a hazard threshold. This paper shows the advantages of voltage probability analysis and recommends that the method is adopted for use in future standards.

Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

NASA Astrophysics Data System (ADS)

Sworakowski, Juliusz

2015-07-01

The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

High Voltage Solar Array Arc Testing for a Direct Drive Hall Effect Thruster System

NASA Technical Reports Server (NTRS)

Schneider, Todd; Carruth, M. R., Jr.; Vaughn, J. A.; Jongeward, G. A.; Mikellides, I. G.; Ferguson, D.; Kerslake, T. W.; Peterson, T.; Snyder, D.; Hoskins, A.

2004-01-01

The deleterious effects of spacecraft charging are well known, particularly when the charging leads to arc events. The damage that results from arcing can severely reduce system lifetime and even cause critical system failures. On a primary spacecraft system such as a solar array, there is very little tolerance for arcing. Motivated by these concerns, an experimental investigation was undertaken to determine arc thresholds for a high voltage (200-500 V) solar array in a plasma environment. The investigation was in support of a NASA program to develop a Direct Drive Hall-Effect Thruster (D2HET) system. By directly coupling the solar array to a Hall-effect thruster, the D2HET program seeks to reduce mass, cost and complexity commonly associated with the power processing in conventional power systems. In the investigation, multiple solar array technologies and configurations were tested. The cell samples were biased to a negative voltage, with an applied potential difference between them, to imitate possible scenarios in solar array strings that could lead to damaging arcs. The samples were tested in an environment that emulated a low-energy, HET-induced plasma. Short duration trigger arcs as well as long duration sustained arcs were generated. Typical current and voltage waveforms associated with the arc events are presented. Arc thresholds are also defined in terms of voltage, current and power. The data will be used to propose a new, high-voltage (greater than 300 V) solar array design for which the likelihood of damage from arcing is minimal.

High-speed low-power voltage-programmed driving scheme for AMOLED displays

NASA Astrophysics Data System (ADS)

Xingheng, Xia; Weijing, Wu; Xiaofeng, Song; Guanming, Li; Lei, Zhou; Lirong, Zhang; Miao, Xu; Lei, Wang; Junbiao, Peng

2015-12-01

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N -1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors (5T2C). In-Zn-O thin-film transistors (IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames (N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB655000) the National Natural Science Foundation of China (Nos. 61204089, 61306099, 61036007, 51173049, U1301243), and the Fundamental Research Funds for the Central Universities (Nos. 2013ZZ0046, 2014ZZ0028).

Spontaneous magnetic fluctuations and collisionless regulation of the Earth's plasma sheet

NASA Astrophysics Data System (ADS)

Moya, P. S.; Espinoza, C.; Stepanova, M. V.; Antonova, E. E.; Valdivia, J. A.

2017-12-01

Even in the absence of instabilities, plasmas often exhibit inherent electromagnetic fluctuations which are present due to the thermal motion of charged particles, sometimes called thermal (quasi-thermal) noise. One of the fundamental and challenging problems of laboratory, space, and astrophysical plasma physics is the understanding of the relaxation processes of nearly collisionless plasmas, and the resultant state of electromagnetic plasma turbulence. The study of thermal fluctuations can be elegantly addressed by using the Fluctuation-Dissipation Theorem that describes the average amplitude of the fluctuations through correlations of the linear response of the media with the perturbations of the equilibrium state (the dissipation). Recently, it has been shown that solar wind plasma beta and temperature anisotropy observations are bounded by kinetic instabilities such as the ion cyclotron, mirror, and firehose instabilities. The magnetic fluctuations observed within the bounded area are consistent with the predictions of the Fluctuation-Dissipation theorem even far below the kinetic instability thresholds, with an enhancement of the fluctuation level near the thresholds. Here, for the very first time, using in-situ magnetic field and plasma data from the THEMIS spacecraft, we show that such regulation also occurs in the Earth's plasma sheet at the ion scales and that, regardless of the clear differences between the solar wind and the magnetosphere environments, spontaneous fluctuation and their collisionless regulation seem to be fundamental features of space and astrophysical plasmas, suggesting the universality of the processes.

Effect of wave localization on plasma instabilities

NASA Astrophysics Data System (ADS)

Levedahl, William Kirk

1987-10-01

The Anderson model of wave localization in random media is involved to study the effect of solar wind density turbulence on plasma processes associated with the solar type III radio burst. ISEE-3 satellite data indicate that a possible model for the type III process is the parametric decay of Langmuir waves excited by solar flare electron streams into daughter electromagnetic and ion acoustic waves. The threshold for this instability, however, is much higher than observed Langmuir wave levels because of rapid wave convection of the transverse electromagnetic daughter wave in the case where the solar wind is assumed homogeneous. Langmuir and transverse waves near critical density satisfy the Ioffe-Reigel criteria for wave localization in the solar wind with observed density fluctuations -1 percent. Numerical simulations of wave propagation in random media confirm the localization length predictions of Escande and Souillard for stationary density fluctations. For mobile density fluctuations localized wave packets spread at the propagation velocity of the density fluctuations rather than the group velocity of the waves. Computer simulations using a linearized hybrid code show that an electron beam will excite localized Langmuir waves in a plasma with density turbulence. An action principle approach is used to develop a theory of non-linear wave processes when waves are localized. A theory of resonant particles diffusion by localized waves is developed to explain the saturation of the beam-plasma instability. It is argued that localization of electromagnetic waves will allow the instability threshold to be exceeded for the parametric decay discussed above.

Towards the control of the modal energy transfer in transverse mode instabilities

NASA Astrophysics Data System (ADS)

Stihler, Christoph; Jauregui, Cesar; Tünnermann, Andreas; Limpert, Jens

2018-02-01

Thermally-induced refractive index gratings (RIG) in high-power fiber laser systems lead to transverse mode instabilities (TMI) above a certain average power threshold. The effect of TMI is currently the main limitation for the further average power scaling of fiber lasers and amplifiers with nearly diffraction-limited beam quality. In this work we experimentally investigate, for the first time, the growth of the RIG strength by introducing a phase-shift between the RIG and the modal interference pattern in a fiber amplifier. The experiments reveal that the RIG is strong enough to couple energy between different transverse modes even at powers significantly below the TMI threshold, provided that the introduced phase-shift is high enough. This indicates that, as the strength of the RIG further increases with increasing average output power, the RIG becomes more and more sensitive to even small noise-induced phase-shifts, which ultimately trigger TMI. Furthermore, it is shown that a beam cleaning also occurs when a positive phase-shift is introduced, even above the TMI threshold. This finding will pave the way for the development of a new class of mitigation strategies for TMI, which key feature is the control of the introduced phase-shift.

Updated LPI Thresholds for the Nike Laser*

NASA Astrophysics Data System (ADS)

Weaver, J. L.; Oh, J.; Afeyan, B.; Phillips, L.; Seely, J.; Kehne, D.; Brown, C.; Obenschain, S. P.; Serlin, V.; Schmitt, A. J.; Feldman, U.; Holland, G.; Manka, C.; Lehmberg, R. H.; McLean, E.

2009-11-01

Advanced implosion designs for direct drive inertial confinement fusion use high laser intensities (10^15-10^16 W/cm^2) to achieve gain (g>100) with a reduction in total laser energy (E<1 MJ). Krypton-fluoride lasers such as the Nike laser at NRL are an attractive choice due to their combination of short wavelength (248 nm), large bandwidth (1-2 THz), and beam smoothing by induced spatial incoherence but the potential threat from laser-plasma instabilities (LPI) needs to be assessed. The 2008 LPI campaign at Nike yielded threshold intensities above 10^15 W/cm^2 for the two-plasmon instability, a value higher than reported for 351 nm glass lasers. The experiments used a planar geometry, solid polystyrene targets, and a subset of beams (E<200 J) with a reduced focal spot (d<125 μm). The 2009 campaign extended the shot parameters to higher laser energies (E<1 kJ) and larger spot sizes (d<300 μm). Spectrally-resolved and time-resolved measurements of x-rays and emission near ^1/2φo and ^3/2φo harmonics of the laser wavelength show threshold intensities consistent with the 2008 results. *Work supported by DoE/NNSA

Theoretical study of the effect of pump wavelength drift on mode instability in a high-power fiber amplifier

NASA Astrophysics Data System (ADS)

Liu, Yakun; Tao, Rumao; Su, Rongtao; Wang, Xiaolin; Ma, Pengfei; Zhang, Hanwei; Zhou, Pu; Si, Lei

2018-04-01

This paper presents an investigation of the effect of pump wavelength drift on the threshold of mode instability (MI) in high-power ytterbium-doped fiber lasers. By using a semi-analytical model, we study the effects of pump wavelength drift with a central pump wavelength around 976 nm and 915 nm, respectively. The influences of the pump absorption coefficient and total pump absorption are considered simultaneously. The results indicate that the effect of pump wavelength drift around 976 nm is stronger than that around 915 nm. For more efficient suppression of MI by shifting the pump wavelength, efficient absorption of pump power is required. The MI thresholds for fibers with different total pump absorptions and cladding diameters are compared. When the total pump absorption is increased, the gain saturation is enhanced, which results in the MI being mitigated more effectively and being more sensitive to pump wavelength drift. The MI threshold in gain fibers with larger inner cladding diameter is higher but more dependent upon pump wavelength. The results of this work can help in optimizing the pump wavelength and fiber parameters and suppressing MI in high-power fiber lasers.

Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits.

PubMed

Kim, Sung-Jin; Yokokawa, Ryuji; Takayama, Shuichi

2012-12-03

This paper reveals a critical limitation in the electro-hydraulic analogy between a microfluidic membrane-valve (μMV) and an electronic transistor. Unlike typical transistors that have similar on and off threshold voltages, in hydraulic μMVs, the threshold pressures for opening and closing are significantly different and can change, even for the same μMVs depending on overall circuit design and operation conditions. We explain, in particular, how the negative values of the closing threshold pressures significantly constrain operation of even simple hydraulic μMV circuits such as autonomously switching two-valve microfluidic oscillators. These understandings have significant implications in designing self-regulated microfluidic devices.

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

NASA Technical Reports Server (NTRS)

Shuler, Robert L., Jr. (Inventor)

2002-01-01

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause the voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. The method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

NASA Technical Reports Server (NTRS)

Shuler, Robert L., Jr. (Inventor)

2002-01-01

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause tile voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. A method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.