Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Edström, Daniel, E-mail: daned@ifm.liu.se; Sangiovanni, Davide G.; Hultman, Lars

2016-07-15

Large-scale classical molecular dynamics simulations of epitaxial TiN/TiN(001) thin film growth at 1200 K are carried out using incident flux ratios N/Ti = 1, 2, and 4. The films are analyzed as a function of composition, island size distribution, island edge orientation, and vacancy formation. Results show that N/Ti = 1 films are globally understoichiometric with dispersed Ti-rich surface regions which serve as traps to nucleate 111-oriented islands, leading to local epitaxial breakdown. Films grown with N/Ti = 2 are approximately stoichiometric and the growth mode is closer to layer-by-layer, while N/Ti = 4 films are stoichiometric with N-rich surfaces. As N/Ti is increased from 1 to 4, islandmore » edges are increasingly polar, i.e., 110-oriented, and N-terminated to accommodate the excess N flux, some of which is lost by reflection of incident N atoms. N vacancies are produced in the surface layer during film deposition with N/Ti = 1 due to the formation and subsequent desorption of N{sub 2} molecules composed of a N adatom and a N surface atom, as well as itinerant Ti adatoms pulling up N surface atoms. The N vacancy concentration is significantly reduced as N/Ti is increased to 2; with N/Ti = 4, Ti vacancies dominate. Overall, our results show that an insufficient N/Ti ratio leads to surface roughening via nucleation of small dispersed 111 islands, whereas high N/Ti ratios result in surface roughening due to more rapid upper-layer nucleation and mound formation. The growth mode of N/Ti = 2 films, which have smoother surfaces, is closer to layer-by-layer.« less

Asymmetry of radiation damage properties in Al-Ti nanolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Setyawan, Wahyu; Gerboth, Matthew D.; Yao, Bo

2014-02-01

Molecular dynamics (MD) simulations were employed with empirical potentials to study the effects of multilayer interfaces and interface spacing in Al-Ti nanolayers. Several model interfaces derived from stacking of close-packed layers or face-centered cubic \\{100\\} layers were investigated. The simulations reveal significant and important asymmetries in defect production withmore » $$\\sim$$60\\% of vacancies created in Al layers compared to Ti layers within the Al-Ti multilayer system. The asymmetry in the creation of interstitials is even more pronounced. The asymmetries cause an imbalance in the ratio of vacancies and interstitials in films of dissimilar materials leading to $>$$90\\% of the surviving interstitials located in the Al layers. While in the close-packed nanolayers the interstitials migrate to the atomic layers adjacent to the interface of the Al layers, in the \\{100\\} nanolayers the interstitials migrate to the center of the Al layers and away from the interfaces. The degree of asymmetry and defect ratio imbalance increases as the layer spacing decreases in the multilayer films. Underlying physical processes are discussed including the interfacial strain fields and the individual elemental layer stopping power in nanolayered systems. In addition, experimental work was performed on low-dose (10$$^{16}$ atoms/cm$^2$) helium (He) irradiation on Al/Ti nanolayers (5 nm per film), resulting in He bubble formation $$\\sim$$1 nm in diameter in the Ti film near the interface. The correlation between the preferential flux of displaced atoms from Ti films to Al films during the defect production that is revealed in the simulations and the morphology and location of He bubbles from the experiments is discussed.« less

Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers

PubMed Central

2017-01-01

We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions. PMID:28291942

Surface structure of MgO underlayer with Ti diffusion for (002) oriented L10 FePt-based heat assisted magnetic recording media

NASA Astrophysics Data System (ADS)

Hinata, Sintaro; Jo, Shin; Saito, Shin

2018-05-01

Surface morphology of the MgO layer and magnetic properties of FePt-C layer deposited on the MgO were investigated for the FePt-based heat assisted magnetic recording media. Stacking structure of the underlayer for the FePt-C layer was MgO (0-5 nm)/Cr80Mn20 (0-30 nm)/Cr50Ti50 (0-50 nm)/glass sub.. Surface observation result for the MgO film by using an atomic force microscope revealed the existence of nodules with a height of about 2 nm and a network-like convex structure with a height difference of about sub nm (boundary wall, BW) on the MgO crystal grain boundary. Density of the nodules largely depends on the surface roughness of the CrTi layer, RaCrTi and it is suppressed from 10 to 2/0.5 μm2 by reducing RaCrTi from 420 to 260 pm. Height of the BW depends on thickness of the MgO layer, tMgO and it can be suppressed by reducing tMgO to less than 4 nm. From the cross-sectional energy dispersive x-ray mapping, it is clarified that the BW is formed by atomic diffusion of Ti atoms from CrTi layer due to the substrate heating process, and a compound consists of Mg, Ti and O atoms. This BW can be used as a template to magnetically isolate the FePt column in the FePt-based granular film, such as FePt-SiO2, if the size of the BW is reduced to less than 10 nm. M-H loop of the FePt-C granular film deposited on the underlayer showed that the nodule and BW induce oxidation of the FePt grains, and reduction of intergranular exchange coupling.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

PubMed

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

DTIC Science & Technology

2009-06-15

titanium isopropoxide (TTIP) as metal precursors. The deposition rate of titania films from TiCl4 was found to be stable in the 150-300 °C...tetrachloride (TiCl4) and titanium isopropoxide (TTIP) are widely used as metal precursors and water or hydrogen peroxide are used as oxygen precursors.29-36... titanium dioxide supported on high surface area silica gel have been synthesized by atomic layer deposition (ALD) using titanium tetrachloride (TiCl4) and

Strong polarization enhancement in asymmetric three-component ferroelectric superlattices

NASA Astrophysics Data System (ADS)

Lee, Ho Nyung; Christen, Hans M.; Chisholm, Matthew F.; Rouleau, Christopher M.; Lowndes, Douglas H.

2005-01-01

Theoretical predictions-motivated by recent advances in epitaxial engineering-indicate a wealth of complex behaviour arising in superlattices of perovskite-type metal oxides. These include the enhancement of polarization by strain and the possibility of asymmetric properties in three-component superlattices. Here we fabricate superlattices consisting of barium titanate (BaTiO3), strontium titanate (SrTiO3) and calcium titanate (CaTiO3) with atomic-scale control by high-pressure pulsed laser deposition on conducting, atomically flat strontium ruthenate (SrRuO3) layers. The strain in BaTiO3 layers is fully maintained as long as the BaTiO3 thickness does not exceed the combined thicknesses of the CaTiO3 and SrTiO3 layers. By preserving full strain and combining heterointerfacial couplings, we find an overall 50% enhancement of the superlattice global polarization with respect to similarly grown pure BaTiO3, despite the fact that half the layers in the superlattice are nominally non-ferroelectric. We further show that even superlattices containing only single-unit-cell layers of BaTiO3 in a paraelectric matrix remain ferroelectric. Our data reveal that the specific interface structure and local asymmetries play an unexpected role in the polarization enhancement.

A Molecular Cobalt Catalyst Architected and TiO2 Modified p-GaInP2 Photoelectrode for Hydrogen Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, Jing; Yan, Yong; Young, James

2017-05-01

We demonstrate that by employing a hybrid molecular/semiconductor interface with atomic layer deposited (ALD) TiO2 as an intermediate layer, a robust and corrosion resistant GaInP2-TiO2-cobaltoxime-TiO2 photocathode can be operated in alkaline media (pH =13).

Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al{sub 2}O{sub 3}/TiO{sub 2} nanolaminates synthesized by atomic layer deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, W.; Auciello, O.; Premnath, R. N.

2010-01-01

Nanolaminates consisting of Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant ({approx}1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al{sub 2}O{sub 3} and TiO{sub 2} dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation.

Ion blocking dip shape analysis around a LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Jalabert, D.; Zaid, H.; Berger, M. H.; Fongkaew, I.; Lambrecht, W. R. L.; Sehirlioglu, A.

2018-05-01

We present an analysis of the widths of the blocking dips obtained in MEIS ion blocking experiments of two LaAlO3/SrTiO3 heterostructures differing in their LaAlO3 layer thicknesses. In the LaAlO3 layers, the observed blocking dips are larger than expected. This enlargement is the result of the superposition of individual dips at slightly different angular positions revealing a local disorder in the atomic alignment, i.e., layer buckling. By contrast, in the SrTiO3 substrate, just below the interface, the obtained blocking dips are thinner than expected. This thinning indicates that the blocking atoms stand at a larger distance from the scattering center than expected. This is attributed to an accumulation of Sr vacancies at the layer/substrate interface which induces lattice distortions shifting the atoms off the scattering plane.

Effect of Ti seed layers on structure of self-organized epitaxial face-centered-cubic-Ag(001) oriented nanodots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamiko, M.; Nose, K.; Suenaga, R.

2013-12-28

The influence of Ti seed layers on the structure of self-organized Ag nanodots, obtained with a Ti seed-layer-assisted thermal agglomeration method, has been investigated. The samples were grown on MgO(001) single crystal substrates by RF magnetron sputter deposition. The samples were deposited at room temperature and post-annealed at 350 °C for 4 h while maintaining the chamber vacuum conditions. The results of atomic force microscopy (AFM) observations indicated that the insertion of the Ti seed layer (0.6–5.0 nm) between the MgO substrate and Ag layer promotes the agglomeration process, forming the nanodot array. Comparisons between the AFM images revealed thatmore » the size of the Ag nanodots was increased with an increase in the Ti seed layer thickness. The atomic concentration of the film surface was confirmed by X-ray photoelectron spectroscopy (XPS). The XPS result suggested that the nanodot surface mainly consisted of Ag. Moreover, X-ray diffraction results proved that the initial deposition of the Ti seed layer (0.6–5.0 nm) onto MgO(001) prior to the Ag deposition yielded high-quality fcc-Ag(001) oriented epitaxial nanodots. The optical absorbance spectra of the fabricated Ag nanodots with various Ti seed layer thicknesses were obtained in the visible light range.« less

Improvement of light extraction of LYSO scintillator by using a combination of self-assembly of nanospheres and atomic layer deposition.

PubMed

Zhu, Zhichao; Liu, Bo; Zhang, Haifeng; Ren, Weina; Cheng, Chuanwei; Wu, Shuang; Gu, Mu; Chen, Hong

2015-03-23

The self-assembled monolayer periodic array of polystyrene spheres conformally coated with TiO₂ layer using atomic layer deposition is designed to obtain a further enhancement of light extraction for LYSO scintillator. The maximum enhancement is 149% for the sample with polystyrene spheres conformally coated with TiO₂ layer, while the enhancement is only 76% for the sample with only polystyrene spheres. Such further enhancement could be contributed from the additional modes forming by TiO₂ layer due to its high refractive index, which can be approved by the simulation of electric field distribution. The experimental results are agreement with the simulated results. Furthermore, the prepared structured layer exhibits an excellent combination with the surface of scintillator, which is in favor of the practical application. Therefore, it is safely concluded that the combination of self-assembly method and atomic layer deposition is a promising approach to obtain a significant enhancement of light extraction for a large area. This method can be extended to many other luminescent materials and devices.

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Direct observation of interfacial Au atoms on TiO₂ in three dimensions.

PubMed

Gao, Wenpei; Sivaramakrishnan, Shankar; Wen, Jianguo; Zuo, Jian-Min

2015-04-08

Interfacial atoms, which result from interactions between the metal nanoparticles and support, have a large impact on the physical and chemical properties of nanoparticles. However, they are difficult to observe; the lack of knowledge has been a major obstacle toward unraveling their role in chemical transformations. Here we report conclusive evidence of interfacial Au atoms formed on the rutile (TiO2) (110) surfaces by activation using high-temperature (∼500 °C) annealing in air. Three-dimensional imaging was performed using depth-sectioning enabled by aberration-corrected scanning transmission electron microscopy. Results show that the interface between Au nanocrystals and TiO2 (110) surfaces consists of a single atomic layer with Au atoms embedded inside Ti-O. The number of interfacial Au atoms is estimated from ∼1-8 in an interfacial atomic column. Direct impact of interfacial Au atoms is observed on an enhanced Au-TiO2 interaction and the reduction of surface TiO2; both are critical to Au catalysis.

Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization.

PubMed

Park, Sang Wook; Choi, Jong Youn; Siddiqui, Shariq; Sahu, Bhagawan; Galatage, Rohit; Yoshida, Naomi; Kachian, Jessica; Kummel, Andrew C

2017-02-07

Si 0.5 Ge 0.5 (110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (H 2 O 2 ), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl 4 ) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and H 2 O 2 (g) were utilized and scanning tunneling spectroscopy (STS) demonstrated unpinning of the surface Fermi level. The H 2 O 2 (g) could also be used to functionalize the surface for metal atomic layer deposition. After subsequent TDMAT or TiCl 4 dosing followed by a post-deposition annealing, scanning tunneling microscopy demonstrated that a thermally stable and well-ordered monolayer of TiO x was deposited on Si 0.5 Ge 0.5 (110), and X-ray photoelectron spectroscopy verified that the interfaces only contained Si-O-Ti bonds and a complete absence of GeO x . STS measurements confirmed a TiO x monolayer without mid-gap and conduction band edge states, which should be an ideal ultrathin insulating layer in a metal-insulator-semiconductor structure. Regardless of the Ti precursors, the final Ti density and electronic structure were identical since the Ti bonding is limited by the high coordination of Ti to O.

Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process

PubMed Central

Jo, Yongcheol; Jung, Kyooho; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Hong, Jinpyo; Lee, Jeon-Kook; Im, Hyunsik

2014-01-01

This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I–V) characteristics are observed within the RS voltage window of −2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiOx where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels. PMID:25483325

Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

NASA Astrophysics Data System (ADS)

Kupa, I.; Unal, Y.; Cetin, S. S.; Durna, L.; Topalli, K.; Okyay, A. K.; Ates, H.

2018-05-01

TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.

What is the copper thin film thickness effect on thermal properties of NiTi/Cu bi-layer?

NASA Astrophysics Data System (ADS)

Fazeli, Sara; Vahedpour, Morteza; Khatiboleslam Sadrnezhaad, Sayed

2017-02-01

Molecular dynamics (MD) simulation was used to study of thermal properties of NiTi/Cu. Embedded atom method (EAM) potentials for describing of inter-atomic interaction and Nose-Hoover thermostat and barostat are employed. The melting of the bi-layers was considered by studying the temperature dependence of the cohesive energy and mean square displacement. To highlight the differences between bi-layers with various copper layer thickness, the effect of copper film thickness on thermal properties containing the cohesive energy, melting point, isobaric heat capacity and latent heat of fusion was estimated. The results show that thermal properties of bi-layer systems are higher than that of their corresponding of pure NiTi. But, these properties of bi-layer systems approximately are independent of copper film thicknesses. The mean square displacement (MSD) results show that, the diffusion coefficients enhance upon increasing of copper film thickness in a linear performance.

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

NASA Astrophysics Data System (ADS)

Ates, H.; Bolat, S.; Oruc, F.; Okyay, A. K.

2018-05-01

Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.

Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

NASA Astrophysics Data System (ADS)

Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

2018-04-01

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Theoretical modeling and experimental observations of the atomic layer deposition of SrO using a cyclopentadienyl Sr precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fredrickson, Kurt D.; Slepko, Alex; Demkov, Alexander A., E-mail: demkov@physics.utexas.edu

2016-08-14

First-principle calculations are used to model the adsorption and hydration of strontium bis(cyclopentadienyl) [Sr(Cp){sub 2}] on TiO{sub 2}-terminated strontium titanate, SrTiO{sub 3} (STO), for the deposition of strontium oxide, SrO, by atomic layer deposition (ALD). The Sr(Cp){sub 2} precursor is shown to adsorb on the TiO{sub 2}-terminated surface, with the Sr atom assuming essentially the bulk position in STO. The C–Sr bonds are weaker than in the free molecule, with a Ti atom at the surface bonding to one of the C atoms in the cyclopentadienyl rings. The surface does not need to be hydrogenated for precursor adsorption. The calculationsmore » are compared with experimental observations for a related Sr cyclopentadienyl precursor, strontium bis(triisopropylcyclopentadienyl) [Sr({sup i}Pr{sub 3}Cp){sub 2}], adsorbed on TiO{sub 2}-terminated STO. High-resolution x-ray photoelectron spectroscopy and low-energy ion scattering spectroscopy show adsorption of the Sr precursor on the TiO{sub 2}-terminated STO after a single precursor dose. This study suggests that ALD growth from the strontium precursors featuring cyclopentadienyl ligands, such as Sr(Cp){sub 2}, may initiate film growth on non-hydroxylated surfaces.« less

Adsorption effect on the formation of conductive path in defective TiO2: ab initio calculations

NASA Astrophysics Data System (ADS)

Li, Lei; Li, Wenshi; Qin, Han; Yang, Jianfeng; Mao, Ling-Feng

2017-10-01

Although the metal/TiO2/metal junctions providing resistive switching properties have attracted lots of attention in recent decades, revealing the atomic-nature of conductive path in TiO2 active layer remains a critical challenge. Here the effects of metal adsorption on defective TiO2(1 1 0) surface are theoretically investigated via ab initio calculations. The dependence of the conductive path on the adsorption of Ti/Zr/Cu/Pt/O atoms above a lattice Ti-ion in (1 1 0) plane and at 〈1 1 0〉 direction of the defective TiO2(0 0 1) surface are compared. It is found that Ti adsorptions in both sites give larger contributions to the presence of conductive path with more stability and larger transport coefficients at Fermi level, whereas the O adsorptions at both sites fail to produce conductive path. Moreover, the adsorptions of Zr/Cu/Pt atoms reduce the existence possibility of conductive path, especially absorbed above the lattice Ti-ion at 〈1 1 0〉 direction. Thus, it is helpful to clarify the interaction of the metal electrode and oxide layer in resistive random access memory.

Mg/Ti multilayers: Structural and hydrogen absorption properties

NASA Astrophysics Data System (ADS)

Baldi, A.; Pálsson, G. K.; Gonzalez-Silveira, M.; Schreuders, H.; Slaman, M.; Rector, J. H.; Krishnan, G.; Kooi, B. J.; Walker, G. S.; Fay, M. W.; Hjörvarsson, B.; Wijngaarden, R. J.; Dam, B.; Griessen, R.

2010-06-01

Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a “spinodal-like” microstructure with a small degree of chemical short-range order in the atomic distribution. In the present study we artificially engineer short-range order by depositing Pd-capped Mg/Ti multilayers with different periodicities. Notwithstanding the large lattice mismatch between Mg and Ti, the as-deposited metallic multilayers show good structural coherence. On exposure to H2 gas a two-step hydrogenation process occurs with the Ti layers forming the hydride before Mg. From in situ measurements of the bilayer thickness Λ at different hydrogen pressures, we observe large out-of-plane expansions of Mg and Ti layers on hydrogenation, indicating strong plastic deformations in the films and a consequent shortening of the coherence length. On unloading at room temperature in air, hydrogen atoms remain trapped in the Ti layers due to kinetic constraints. Such loading/unloading sequence can be explained in terms of the different thermodynamic properties of hydrogen in Mg and Ti, as shown by diffusion calculations on a model multilayered systems. Absorption isotherms measured by hydrogenography can be interpreted as a result of the elastic clamping arising from strongly bonded Mg/Pd and broken Mg/Ti interfaces.

TiO2/ZnO and ZnO/TiO2 core/shell nanofibers prepared by electrospinning and atomic layer deposition for photocatalysis and gas sensing

NASA Astrophysics Data System (ADS)

Boyadjiev, Stefan I.; Kéri, Orsolya; Bárdos, Péter; Firkala, Tamás; Gáber, Fanni; Nagy, Zsombor K.; Baji, Zsófia; Takács, Máté; Szilágyi, Imre M.

2017-12-01

In the present work, core TiO2 and ZnO oxide nanofibers were prepared by electrospinning, then shell oxide (ZnO, TiO2) layers were deposited on them by atomic layer deposition (ALD). The aim of preparing ZnO and TiO2 nanofibers, as well as ZnO/TiO2 and TiO2/ZnO nanocomposites is to study the interaction between the oxide materials when a pure oxide fiber is covered with thin film of the other oxide, and explore the influence of exchanging the core and shell materials on their photocatalytic and gas sensing properties. The composition, structure and morphology of the pure and composite nanofibers were studied by SEM-EDX, TEM, XRD, FTIR, UV-vis and Raman. The photocatalytic activity of the as-prepared materials was analyzed by UV-vis spectroscopy through decomposing aqueous methyl orange under UV irradiation. The gas sensing of the nanofibers was investigated by detecting 100 ppm NH3 at 150 and 220 °C using interdigital electrode based sensors.

Tunable inverse topological heterostructure utilizing ( B i 1 - x I n x ) 2 S e 3 and multichannel weak-antilocalization effect

DOE PAGES

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; ...

2016-03-10

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary themore » thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less

Atomic defects in monolayer titanium carbide (Ti 3C 2T x) MXene

DOE PAGES

Sang, Xiahan; Xie, Yu; Lin, Ming -Wei; ...

2016-09-06

Here, the 2D transition metal carbides or nitrides, or MXenes, are emerging as a group of materials showing great promise in lithium ion batteries and supercapacitors. Until now, characterization and properties of single-layer MXenes have been scarcely reported. Here, using scanning transmission electron microscopy, we determined the atomic structure of freestanding monolayer Ti 3C 2T x flakes prepared via the minimally intensive layer delamination method and characterized different point defects that are prevalent in the monolayer flakes. We determine that the Ti vacancy concentration can be controlled by the etchant concentration during preparation. Density function theory-based calculations confirm the defectmore » structures and predict that the defects can influence the surface morphology and termination groups, but do not strongly influence the metallic conductivity. Using devices fabricated from single- and few-layer Ti 3C 2T x MXene flakes, the effect of the number of layers in the flake on conductivity has been demonstrated.« less

Large-Area Atomic Layers of the Charge-Density-Wave Conductor TiSe2.

PubMed

Wang, Hong; Chen, Yu; Duchamp, Martial; Zeng, Qingsheng; Wang, Xuewen; Tsang, Siu Hon; Li, Hongling; Jing, Lin; Yu, Ting; Teo, Edwin Hang Tong; Liu, Zheng

2018-02-01

Layered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe 2 . However, the syntheses of monolayer and large-area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 10 5 µm 2 large films of the typical 2D CDW conductor-TiSe 2 -by ambient-pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as-grown samples are highly crystalline 1T-phase TiSe 2 . Variable-temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe 2 , indicative of high crystal quality. This work not only allows the exploration of many-body state of TiSe 2 in 2D limit but also offers the possibility of utilizing large-area TiSe 2 in ultrathin electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spectroscopic determination of surface geometry: Ti(0001)-H(1×1)

NASA Astrophysics Data System (ADS)

Feibelman, Peter J.; Hamann, D. R.

1980-02-01

The electronic structure of a Ti(0001) film covered by a monolayer of H is shown to depend strongly on the location of the H atom in the surface unit cell. Best agreement with experiment is found with the H's in three-fold sites, 0.8 a.u. outside the outer Ti layer. In this geometry the H atoms "heal" the surface-the clean Ti(0001) surface state near the Fermi level is removed and the outer layer d-like local density of states (LDOS) is quite similar to that of the interior. Additionally, the calculated work function is 4.0 eV and an H-derived peak in the calculated LDOS appears 5 eV below EF, in agreement with photoemission measurements.

Controllable synthesis of graphene-based titanium dioxide nanocomposites by atomic layer deposition.

PubMed

Meng, Xiangbo; Geng, Dongsheng; Liu, Jian; Li, Ruying; Sun, Xueliang

2011-04-22

Atomic layer deposition (ALD) was used to synthesize graphene-based metal oxide nanocomposites. This strategy was fulfilled on the preparation of TiO(2)-graphene nanosheet (TiO(2)-GNS) nanocomposites using titanium isopropoxide and water as precursors. The synthesized nanocomposites demonstrated that ALD exhibited many benefits in a controllable means. It was found that the as-deposited TiO(2) was tunable not only in its morphologies but also in its structural phases. As for the former, TiO(2) was transferable from nanoparticles to nanofilms with increased cycles. With regard to the latter, TiO(2) was changeable from amorphous to crystalline phase, and even a mixture of the two with increased growth temperatures (up to 250 °C). The underlying growth mechanisms were discussed and the resultant TiO(2)-GNS nanocomposites have great potentials for many applications, such as photocatalysis, lithium-ion batteries, fuel cells, and sensors.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

Quantum chemical investigation on the role of Li adsorbed on anatase (101) surface nano-materials on the storage of molecular hydrogen.

PubMed

Srinivasadesikan, V; Raghunath, P; Lin, M C

2015-06-01

Lithiation of TiO2 has been shown to enhance the storage of hydrogen up to 5.6 wt% (Hu et al. J Am Chem Soc 128:11740-11741, 2006). The mechanism for the process is still unknown. In this work we have carried out a study on the adsorption and diffusion of Li atoms on the surface and migration into subsurface layers of anatase (101) by periodic density functional theory calculations implementing on-site Coulomb interactions (DFT+U). The model consists of 24 [TiO2] units with 11.097 × 7.655 Å(2) surface area. Adsorption energies have been calculated for different Li atoms (1-14) on the surface. A maximum of 13 Li atoms can be accommodated on the surface at two bridged O, Ti-O, and Ti atom adsorption sites, with 83 kcal mol(-1) adsorption energy for a single Li atom adsorbed between two bridged O atoms from where it can migrate into the subsurface layer with 27 kcal mol(-1) energy barrier. The predicted adsorption energies for H2 on the lithiated TiO2 (101) surface with 1-10 Li atoms revealed that the highest adsorption energies occurred on 1-Li, 5-Li, and 9-Li surfaces with 3.5, 4.4, and 7.6 kcal mol(-1), respectively. The values decrease rapidly with additional H2 co-adsorbed on the lithiated surfaces; the maximum H2 adsorption on the 9Li-TiO2(a) surface was estimated to be only 0.32 wt% under 100 atm H2 pressure at 77 K. The result of Bader charge analysis indicated that the reduction of Ti occurred depending on the Li atoms covered on the TiO2 surface.

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

2016-01-25

We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. Onmore » the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.« less

Understanding the mechanisms of interfacial reactions during TiO{sub 2} layer growth on RuO{sub 2} by atomic layer deposition with O{sub 2} plasma or H{sub 2}O as oxygen source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaker, A.; Szkutnik, P. D.; Pointet, J.

2016-08-28

In this paper, TiO{sub 2} layers grown on RuO{sub 2} by atomic layer deposition (ALD) using tetrakis (dimethyla-mino) titanium (TDMAT) and either oxygen plasma or H{sub 2}O as oxygen source were analyzed using X-ray diffraction (XRD), Raman spectroscopy, and depth-resolved X-ray Photoelectron spectroscopy (XPS). The main objective is to investigate the surface chemical reactions mechanisms and their influence on the TiO{sub 2} film properties. The experimental results using XRD show that ALD deposition using H{sub 2}O leads to anatase TiO{sub 2} whereas a rutile TiO{sub 2} is obtained when oxygen-plasma is used as oxygen source. Depth-resolved XPS analysis allows tomore » determine the reaction mechanisms at the RuO{sub 2} substrate surface after growth of thin TiO{sub 2} layers. Indeed, the XPS analysis shows that when H{sub 2}O assisted ALD process is used, intermediate Ti{sub 2}O{sub 3} layer is obtained and RuO{sub 2} is reduced into Ru as evidenced by high resolution transmission electron microscopy. In this case, there is no possibility to re-oxidize the Ru surface into RuO{sub 2} due to the weak oxidation character of H{sub 2}O and an anatase TiO{sub 2} layer is therefore grown on Ti{sub 2}O{sub 3}. In contrast, when oxygen plasma is used in the ALD process, its strong oxidation character leads to the re-oxidation of the partially reduced RuO{sub 2} following the first Ti deposition step. Consequently, the RuO{sub 2} surface is regenerated, allowing the growth of rutile TiO{sub 2}. A surface chemical reaction scheme is proposed that well accounts for the observed experimental results.« less

Atom redistribution and multilayer structure in NiTi shape memory alloy induced by high energy proton irradiation

NASA Astrophysics Data System (ADS)

Wang, Haizhen; Yi, Xiaoyang; Zhu, Yingying; Yin, Yongkui; Gao, Yuan; Cai, Wei; Gao, Zhiyong

2017-10-01

The element distribution and surface microstructure in NiTi shape memory alloys exposed to 3 MeV proton irradiation were investigated. Redistribution of the alloying element and a clearly visible multilayer structure consisting of three layers were observed on the surface of NiTi shape memory alloys after proton irradiation. The outermost layer consists primarily of a columnar-like TiH2 phase with a tetragonal structure, and the internal layer is primarily comprised of a bcc austenite phase. In addition, the Ti2Ni phase, with an fcc structure, serves as the transition layer between the outermost and internal layer. The above-mentioned phenomenon is attributed to the preferential sputtering of high energy protons and segregation induced by irradiation.

Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity.

PubMed

Liao, Shih-Yun; Yang, Ya-Chu; Huang, Sheng-Hsin; Gan, Jon-Yiew

2017-04-29

Pt@TiO2@CNTs hierarchical structures were prepared by first functionalizing carbon nanotubes (CNTs) with nitric acid at 140 °C. Coating of TiO2 particles on the CNTs at 300 °C was then conducted by atomic layer deposition (ALD). After the TiO2@CNTs structure was fabricated, Pt particles were deposited on the TiO2 surface as co-catalyst by plasma-enhanced ALD. The saturated deposition rates of TiO2 on a-CNTs were 1.5 Å/cycle and 0.4 Å/cycle for substrate-enhanced process and linear process, respectively. The saturated deposition rate of Pt on TiO2 was 0.39 Å/cycle. The photocatalytic activities of Pt@TiO2@CNTs hierarchical structures were higher than those without Pt co-catalyst. The particle size of Pt on TiO2@CNTs was a key factor to determine the efficiency of methylene blue (MB) degradation. The Pt@TiO2@CNTs of 2.41 ± 0.27 nm exhibited the best efficiency of MB degradation.

Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity

PubMed Central

Liao, Shih-Yun; Yang, Ya-Chu; Huang, Sheng-Hsin; Gan, Jon-Yiew

2017-01-01

Pt@TiO2@CNTs hierarchical structures were prepared by first functionalizing carbon nanotubes (CNTs) with nitric acid at 140 °C. Coating of TiO2 particles on the CNTs at 300 °C was then conducted by atomic layer deposition (ALD). After the TiO2@CNTs structure was fabricated, Pt particles were deposited on the TiO2 surface as co-catalyst by plasma-enhanced ALD. The saturated deposition rates of TiO2 on a-CNTs were 1.5 Å/cycle and 0.4 Å/cycle for substrate-enhanced process and linear process, respectively. The saturated deposition rate of Pt on TiO2 was 0.39 Å/cycle. The photocatalytic activities of Pt@TiO2@CNTs hierarchical structures were higher than those without Pt co-catalyst. The particle size of Pt on TiO2@CNTs was a key factor to determine the efficiency of methylene blue (MB) degradation. The Pt@TiO2@CNTs of 2.41 ± 0.27 nm exhibited the best efficiency of MB degradation. PMID:28468248

Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

NASA Astrophysics Data System (ADS)

Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2018-02-01

The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

XAFS atomistic insight of the oxygen gettering in Ti/HfO 2 based OxRRAM

NASA Astrophysics Data System (ADS)

Viennet, R.; Roussel, H.; Rapenne, L.; Deschanvres, J. L.; Renevier, H.; Jousseaume, V.; Jalaguier, E.; Proietti, M. G.

2018-05-01

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulations studies have few many atomic-scale experimental counterparts. In this study we investigate the oxygen migration mechanism from an amorphous HfO2 layer to the Ti cap layer at a local scale before and after a thermal treatment. X-ray absorption spectroscopy at the Ti K edge and Hf LIII edge has been performed on samples as-deposited and annealed in Ar at 400 ∘C to mimic the back-end-of-line thermal budget (BEOL) of CMOS technology. The short-range Ti and Hf environments have been determined, showing that annealing promotes the migration of O from HfO2 to Ti, the amount of which is quantified. This provokes an expansion and an increase of atomic disorder in the Ti lattice. The nature of the oxygen gettering mechanism by the Ti metal is understood by comparing samples with increasing Ti-capping thickness. We show that the Ti getter effect has to be activated by thermal treatment and that the O diffusion takes place in a region of a few nanometers close to the Ti /HfO2 interface. Therefore, the thermal budget history and the Ti cap-layer thickness determine the oxygen vacancy content in the HfO2 layer, which in turn controls the electrical properties, especially the forming operation.

Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)

NASA Astrophysics Data System (ADS)

Boyadjiev, S.; Georgieva, V.; Vergov, L.; Baji, Zs; Gáber, F.; Szilágyi, I. M.

2014-11-01

Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.

Pulsed-Current Electrochemical Codeposition and Heat Treatment of Ti-Dispersed Ni-Matrix Layers

NASA Astrophysics Data System (ADS)

Janetaisong, Pathompong; Boonyongmaneerat, Yuttanant; Techapiesancharoenkij, Ratchatee

2016-08-01

An electrochemical deposition is a fast and cost-efficient process to produce film or coating. In this research, Ni-Ti electrodeposition is developed by codepositing a Ti-dispersed Ni-matrix layer from a Ni-plating solution suspended with Ti particles. To enhance the coating uniformity and control the atomic composition, the pulsed current was applied to codeposit Ni-Ti layers with varying pulse duty cycles (10 to 100 pct) and frequencies (10 to 100 Hz). The microstructures and compositions of the codeposited layers were analyzed by scanning electron microscopy, X-ray diffraction, and X-ray fluorescent techniques. The pulsed current significantly improved the quality of the Ni-Ti layer as compared to a direct current. The Ni-Ti layers could be electroplated with a controlled composition within 48 to 51 at. pct of Ti. The optimal pulse duty cycle and frequency are 50 pct and 10 Hz, respectively. The standalone Ni-49Ti layers were removed from copper substrates by selective etching method and subsequently heat-treated under Ar-fed atmosphere at 1423 K (1150 °C) for 5 hours. The phase and microstructures of the post-annealed samples exhibit different Ni-Ti intermetallic compounds, including NiTi, Ni3Ti, and NiTi2. Yet, the contamination of TiN and TiO2 was also present in the post-annealed samples.

Hydrothermal fabrication of few-layer MoS2 nanosheets within nanopores on TiO2 derived from MIL-125(Ti) for efficient photocatalytic H2 evolution

NASA Astrophysics Data System (ADS)

Ye, Fei; Li, Houfen; Yu, Hongtao; Chen, Shuo; Quan, Xie

2017-12-01

Protons tend to bond strongly with unsaturated-coordinate S element located at the edge of nano-MoS2 and are consequently reduced to H2. Therefore, increasing the active S atoms quantity will be a feasible approach to enhance hydrogen evolution. Herein we developed a porous TiO2 derived from metal organic frameworks (MOFs) as scaffold to restrict the growth and inhibit the aggregation of MoS2 nanosheets. As a result, the thickness of the prepared MoS2 nanosheets was less than 3 nm (1-4 layers), with more edges and active S atoms being exposed. This few-layer MoS2-porous TiO2 exhibits a H2 evolution rate of 897.5 μmol h-1 g-1, which is nearly twice as much as free-stand MoS2 nanosheets and twenty times more than physical mixture of MoS2 with porous TiO2. The high performance is attributed to that more active edge sites in few-layer MoS2-porous TiO2 are exposed than pure MoS2. This work provides a new method to construct MOFs derived porous structures for controlling MoS2 to expose active sites for HER.

Photocatalytic C60-amorphous TiO2 composites prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Justh, Nóra; Firkala, Tamás; László, Krisztina; Lábár, János; Szilágyi, Imre Miklós

2017-10-01

Nanocomposites of TiO2 and single fullerene (C60) molecule are prepared by atomic layer deposition (ALD). To create nucleation sites for the ALD reaction, the bare fullerene is functionalized by H2SO4/HNO3 treatment, which results in C60-SO3H. After a NaOH washing step the intermediate hydrolyzes into C60sbnd OH. This process and the consecutive ALD growth of TiO2 are monitored with FTIR, TG/DTA-MS, EDX, Raman, FTIR, XRD, and TEM measurements. Although the TiO2 grown by ALD at 80 and 160 °C onto fullerol is amorphous it enhances the decomposition of methyl orange under UV exposure. This study proves that amorphous TiO2 grown by low temperature ALD has photocatalytic activity, and it can be used e.g. as self-cleaning coatings also on heat sensitive substrates.

Substrate-insensitive atomic layer deposition of plasmonic titanium nitride films

DOE PAGES

Yu, Ing-Song; Cheng, Hsyi-En; Chang, Chun-Chieh; ...

2017-02-06

The plasmonic properties of titanium nitride (TiN) films depend on the type of substrate when using typical deposition methods such as sputtering. We show atomic layer deposition (ALD) of TiN films with very weak dependence of plasmonic properties on the substrate, which also suggests the prediction and evaluation of plasmonic performance of TiN nanostructures on arbitrary substrates under a given deposition condition. Our results also observe that substrates with more nitrogen-terminated (N-terminated) surfaces will have significant impact on the deposition rate as well as the film plasmonic properties. Furthermore, we illustrate that the plasmonic properties of ALD TiN films canmore » be tailored by simply adjusting the deposition and/or post-deposition annealing temperatures. These characteristics and the capability of conformal coating make ALD TiN films on templates ideal for applications that require the fabrication of complex 3D plasmonic nanostructures.« less

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

PubMed Central

Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

2015-01-01

In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO2) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions. PMID:28793679

The role of terminations and coordination atoms on the pseudocapacitance of titanium carbonitride monolayers.

PubMed

Zhang, Wenqiang; Cheng, Chuan; Fang, Peilin; Tang, Bin; Zhang, Jindou; Huang, Guoming; Cong, Xin; Zhang, Bao; Ji, Xiao; Miao, Ling

2016-02-14

Nowadays, MXenes have received extensive concern as a prominent electrode material of electrochemical capacitors. As two important factors to the capacitance, the influence of the intrinsical terminations (F, O and OH) and coordination atoms (C and N) is investigated using first-principles calculations. According to the density of states aligned with the standard hydrogen electrode, it turns out that a Ti3CNO2 monolayer is proven to show an obvious pseudocapacitive behavior, while the bare, F and OH terminated Ti3CN monolayers may only present electrochemical double layer characters in an aqueous electrolyte. Moreover, the illustration of molecular orbitals over the Fermi level are mainly contributed by the d-orbitals of Ti atoms coordinated with O and N atoms, indicating that the redox pseudocapacitance of the Ti3CNO2 monolayer is promoted by the coordination N atoms. Then the superiority of N bonded Ti atoms in accepting charges can be visualized through the charge population. Further, the larger ratio of C/N in the coordination environment of Ti atoms indicates that more electrons can be stored. Our investigation can give an instructional advice in the MXenes-electrode production.

Photocatalytic hollow TiO2 and ZnO nanospheres prepared by atomic layer deposition.

PubMed

Justh, Nóra; Bakos, László Péter; Hernádi, Klára; Kiss, Gabriella; Réti, Balázs; Erdélyi, Zoltán; Parditka, Bence; Szilágyi, Imre Miklós

2017-06-28

Carbon nanospheres (CNSs) were prepared by hydrothermal synthesis, and coated with TiO 2 and ZnO nanofilms by atomic layer deposition. Subsequently, through burning out the carbon core templates hollow metal oxide nanospheres were obtained. The substrates, the carbon-metal oxide composites and the hollow nanospheres were characterized with TG/DTA-MS, FTIR, Raman, XRD, SEM-EDX, TEM-SAED and their photocatalytic activity was also investigated. The results indicate that CNSs are not beneficial for photocatalysis, but the crystalline hollow metal oxide nanospheres have considerable photocatalytic activity.

High Infrared Blocking Cellulose Film Based on Amorphous to Anatase Transition of TiO2 via Atomic Layer Deposition.

PubMed

Li, Wenbin; Li, Linfeng; Wu, Xi; Li, Junyu; Jiang, Lang; Yang, Hongjun; Ke, Guizhen; Cao, Genyang; Deng, Bo; Xu, Weilin

2018-06-27

A high IR-blocking cellulose film was designed based on an amorphous to anatase transition of TiO 2 using atomic layer deposition (ALD). This transition was realized at 250 °C, at which the cellulose is thermal stable. Optimized ALD condition of 250 °C and 1200 cycles give us an excellent heat insulator, which could significantly reduce the enclosed space temperature from 59.2 to 51.9 °C after exposure to IR lamp for 5 min.

TiS2 and ZrS2 single- and double-wall nanotubes: first-principles study.

PubMed

Bandura, Andrei V; Evarestov, Robert A

2014-02-15

Hybrid density functional theory has been applied for investigations of the electronic and atomic structure of bulk phases, nanolayers, and nanotubes based on titanium and zirconium disulfides. Calculations have been performed on the basis of the localized atomic functions by means of the CRYSTAL-2009 computer code. The full optimization of all atomic positions in the regarded systems has been made to study the atomic relaxation and to determine the most favorable structures. The different layered and isotropic bulk phases have been considered as the possible precursors of the nanotubes. Calculations on single-walled TiS2 and ZrS2 nanotubes confirmed that the nanotubes obtained by rolling up the hexagonal crystalline layers with octahedral 1T morphology are the most stable. The strain energy of TiS2 and ZrS2 nanotubes is small, does not depend on the tube chirality, and approximately obeys to D(-2) law (D is nanotube diameter) of the classical elasticity theory. It is greater than the strain energy of the similar TiO2 and ZrO2 nanotubes; however, the formation energy of the disulfide nanotubes is considerably less than the formation energy of the dioxide nanotubes. The distance and interaction energy between the single-wall components of the double-wall nanotubes is proved to be close to the distance and interaction energy between layers in the layered crystals. Analysis of the relaxed nanotube shape using radial coordinate of the metal atoms demonstrates a small but noticeable deviation from completely cylindrical cross-section of the external walls in the armchair-like double-wall nanotubes. Copyright © 2013 Wiley Periodicals, Inc.

Laser-assisted atom probe tomography of Ti/TiN films deposited on Si.

PubMed

Sanford, N A; Blanchard, P T; White, R; Vissers, M R; Diercks, D R; Davydov, A V; Pappas, D P

2017-03-01

Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). Such materials are of interest for applications that require large arrays of microwave kinetic inductance detectors. The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss microscopy performed in a scanning transmission electron microscope (STEM/EELS) was used to corroborate the L-APT results and establish the overall thicknesses of the trilayers. Three separate batches were studied where the first (bottom) TiN layer was deposited at 500°C (for all batches) and the subsequent TiN/Ti bilayer was deposited at ambient temperature, 250°C, and 500°C, respectively. L-APT rendered an approximately planar TiN/Si interface by making use of plausible mass-spectral assignments to N 3 1+ , SiN 1+ , and SiO 1+ . This was necessary since ambiguities associated with the likely simultaneous occurrence of Si 1+ and N 2 1+ prevented their use in rendering the TiN/Si interface upon reconstruction. The non-superconducting Ti 2 N phase was also revealed by L-APT. Neither L-APT nor STEM/EELS rendered sharp Ti/TiN interfaces and the contrast between these layers diminished with increased film deposition temperature. L-APT also revealed that hydrogen was present in varying degrees in all samples including control samples that were composed of single layers of Ti or TiN. Published by Elsevier Ltd.

Atomic layer deposition of TiO2 on nitrogen-doped carbon nanofibers supported Ru nanoparticles for flexible Li-O2 battery: A combined DFT and experimental study

NASA Astrophysics Data System (ADS)

Yang, Jingbo; Mi, Hongwei; Luo, Shan; Li, Yongliang; Zhang, Peixin; Deng, Libo; Sun, Lingna; Ren, Xiangzhong

2017-11-01

Flexible Li-O2 batteries have attracted worldwide research interests and been considered to be potential alternatives for the next-generation flexible devices. Nitrogen-doped carbon nanofibers (N-CNFs) prepared by electrospinning are used as flexible substrate and an amorphous TiO2 layer is coated by atomic layer deposition (ALD) and then decorated with Ru nanoparticles. The Ru/N-CNFs@TiO2 composite is directly used as a free-standing electrode for Li-O2 batteries and the electrode delivers a high specific capacity, improved round-trip efficiency and good cycling ability. The superior electrochemical performance can be attributed to the amorphous TiO2 protecting layer and superior catalytic activity of Ru nanoparticles. Based on density functional theory (DFT) calculations from first principles, the carbon electrode after coating with TiO2 is more stable during discharge/charge process. The analysis of Li2O2 on three different interfaces (Li2O2/N-CNFs, Li2O2/TiO2, and Li2O2/Ru) indicates that the electron transport capacity was higher on Ru and TiO2 compared with N-CNFs, therefore, Li2O2 could be formed and decomposed more easily on the Ru/N-CNFs@TiO2 cathode. This work paves a way to develop the free-standing cathode materials for the future development of high-performance flexible energy storage systems.

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE PAGES

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.; ...

2017-09-21

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Titanium magnetic polarization at the Fe/BaTiO3 interfaces: An effect of ferroelectric polarization discontinuity

NASA Astrophysics Data System (ADS)

Paul, Amitesh; Zheng, Jian-Guo; Aoki, Toshihiro

2017-10-01

The exotic magnetic phenomena and the associated functionalities have attracted extensive scientific interest in fundamental physics and cater to the purpose of the novel material search. In this article, with a combination of the electron energy-loss spectroscopy and the X-ray absorption spectroscopy, we have investigated the interfacial Fe atoms and the induced ferromagnetic moment of Ti atoms in Fe/BaTiO3 (BTO) heterostructures. The samples were grown with two different BTO thicknesses, thus resulting in two different states of distorted oxygen environments or different electrostatic potentials. We demonstrate that in these systems, the electronic and magnetic proximity effects remain coupled as the ferroelectric polar discontinuity is held responsible for an induced transfer of the interface electrons. These electrons migrate from the Fe2+ layers to the Ti(4+)-δ layers with the hybridization via O-2p oxide orbitals into Ti orbitals to screen the ferroelectric polarization. These findings, in charge neutral BaO-TiO2 and FeO layers or nonpolar/nopolar interface, essentially underline the central role of the covalent bonding in defining the spin-electronic properties.

Relating electronic and geometric structure of atomic layer deposited BaTiO 3 to its electrical properties

DOE PAGES

Torgersen, Jan; Acharya, Shinjita; Dadlani, Anup Lal; ...

2016-03-24

Atomic layer deposition allows the fabrication of BaTiO 3 (BTO) ultrathin films with tunable dielectric properties, which is a promising material for electronic and optical technology. Industrial applicability necessitates a better understanding of their atomic structure and corresponding properties. Through the use of element-specific X-ray absorption near edge structure (XANES) analysis, O K-edge of BTO as a function of cation composition and underlying substrate (RuO 2 and SiO 2) is revealed. By employing density functional theory and multiple scattering simulations, we analyze the distortions in BTO’s bonding environment captured by the XANES spectra. The spectral weight shifts to lower energymore » with increasing Ti content and provides an atomic scale (microscopic) explanation for the increase in leakage current density. Differences in film morphologies in the first few layers near substrate–film interfaces reveal BTO’s homogeneous growth on RuO 2 and its distorted growth on SiO 2. As a result, this work links structural changes to BTO thin-film properties and provides insight necessary for optimizing future BTO and other ternary metal oxide-based thin-film devices.« less

Interfacial band-edge engineered TiO2 protection layer on Cu2O photocathodes for efficient water reduction reaction

NASA Astrophysics Data System (ADS)

Choi, Jaesuk; Song, Jun Tae; Jang, Ho Seong; Choi, Min-Jae; Sim, Dong Min; Yim, Soonmin; Lim, Hunhee; Jung, Yeon Sik; Oh, Jihun

2017-01-01

Photoelectrochemical (PEC) water splitting has emerged as a potential pathway to produce sustainable and renewable chemical fuels. Here, we present a highly active Cu2O/TiO2 photocathode for H2 production by enhancing the interfacial band-edge energetics of the TiO2 layer, which is realized by controlling the fixed charge density of the TiO2 protection layer. The band-edge engineered Cu2O/TiO2 (where TiO2 was grown at 80 °C via atomic layer deposition) enhances the photocurrent density up to -2.04 mA/cm2 at 0 V vs. RHE under 1 sun illumination, corresponding to about a 1,200% enhancement compared to the photocurrent density of the photocathode protected with TiO2 grown at 150 °C. Moreover, band-edge engineering of the TiO2 protection layer prevents electron accumulation at the TiO2 layer and enhances both the Faraday efficiency and the stability for hydrogen production during the PEC water reduction reaction. This facile control over the TiO2/electrolyte interface will also provide new insight for designing highly efficient and stable protection layers for various other photoelectrodes such as Si, InP, and GaAs. [Figure not available: see fulltext.

Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth

PubMed Central

2017-01-01

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble. PMID:28356613

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

PubMed

Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

2012-10-24

The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

A pressure tuned stop-flow atomic layer deposition process for MoS2 on high porous nanostructure and fabrication of TiO2/MoS2 core/shell inverse opal structure

NASA Astrophysics Data System (ADS)

Li, Xianglin; Puttaswamy, Manjunath; Wang, Zhiwei; Kei Tan, Chiew; Grimsdale, Andrew C.; Kherani, Nazir P.; Tok, Alfred Iing Yoong

2017-11-01

MoS2 thin films are obtained by atomic layer deposition (ALD) in the temperature range of 120-150 °C using Mo(CO)6 and dimethyl disulfide (DMDS) as precursors. A pressure tuned stop-flow ALD process facilitates the precursor adsorption and enables the deposition of MoS2 on high porous three dimensional (3D) nanostructures. As a demonstration, a TiO2/MoS2 core/shell inverse opal (TiO2/MoS2-IO) structure has been fabricated through ALD of TiO2 and MoS2 on a self-assembled multilayer polystyrene (PS) structure template. Due to the self-limiting surface reaction mechanism of ALD and the utilization of pressure tuned stop-flow ALD processes, the as fabricated TiO2/MoS2-IO structure has a high uniformity, reflected by FESEM and FIB-SEM characterization. A crystallized TiO2/MoS2-IO structure can be obtained through a post annealing process. As a 3D photonic crystal, the TiO2/MoS2-IO exhibits obvious stopband reflecting peaks, which can be adjusted through changing the opal diameters as well as the thickness of MoS2 layer.

Effect of geometric nanostructures on the absorption edges of 1-D and 2-D TiO₂ fabricated by atomic layer deposition.

PubMed

Chang, Yung-Huang; Liu, Chien-Min; Cheng, Hsyi-En; Chen, Chih

2013-05-01

2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 °C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm.

A fresnoite-structure-related mixed valent titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl: A flux crystal growth route to Ti(III) containing oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abeysinghe, Dileka; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

Single crystals of mixed valent barium titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were grown in a high temperature molten chloride flux involving an in situ reduction step. The fresnoite structure related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} crystallizes in the tetragonal space group P4/mbm with lattice parameters of a=8.6717(2) Å, c=18.6492(5) Å. The title compound exhibits a 3D structure consisting of 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} groups and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} groups that are linked via barium atoms. The in situmore » reduction of Ti(IV) to Ti(III) is achieved via the addition of metallic Mg to the flux to function as the reducing agent. The temperature dependence of the magnetic susceptibility shows simple paramagnetism above 100 K. There is a discontinuity in the susceptibility data below 100 K, which might be due to a structural change that takes place resulting in charge ordering. - Graphical abstract: The fresnoite structure related novel reduced barium titanium chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were synthesized via flux method. An in situ reduction of Ti(IV) to Ti(III) achieved using Mg metal. The 3D structure consists 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connected via barium atoms. Compound shows simple paramagnetism above 100 K. - Highlights: • The fresnoite related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} were grown via molten flux method. • The in situ reduction of Ti(IV) to Ti(III) is achieved using metallic Mg. • 2D layers of Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connect via Ba atoms. • The magnetic susceptibility shows simple paramagnetism above 100 K.« less

Fabrication of Al2O3 coated 2D TiO2 nanoparticle photonic crystal layers by reverse nano-imprint lithography and plasma enhanced atomic layer deposition.

PubMed

Kim, Ki-Kang; Ko, Ki-Young; Ahn, Jinho

2013-10-01

This paper reports simple process to enhance the extraction efficiency of photoluminescence (PL) from Eu-doped yttrium oxide (Y2O3:Eu3+) thin-film phosphor (TFP). Two-dimensional (2D) photonic crystal layer (PCL) was fabricated on Y2O3:Eu3+ phosphor films by reverse nano-imprint method using TiO2 nanoparticle solution as a nano-imprint resin and a 2D hole-patterned PDMS stamp. Atomic scale controlled Al2O3 deposition was performed onto this 2D nanoparticle PCL for the optimization of the photonic crystal pattern size and stabilization of TiO2 nanoparticle column structure. As a result, the light extraction efficiency of the Y2O3:Eu3+ phosphor film was improved by 2.0 times compared to the conventional Y2O3:Eu3+ phosphor film.

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

PubMed

Cui, Qingsong; Sakhdari, Maryam; Chamlagain, Bhim; Chuang, Hsun-Jen; Liu, Yi; Cheng, Mark Ming-Cheng; Zhou, Zhixian; Chen, Pai-Yen

2016-12-21

We present a new and viable template-assisted thermal synthesis method for preparing amorphous ultrathin transition-metal oxides (TMOs) such as TiO 2 and Ta 2 O 5 , which are converted from crystalline two-dimensional (2D) transition-metal dichalcogenides (TMDs) down to a few atomic layers. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were used to characterize the chemical composition and bonding, surface morphology, and atomic structure of these ultrathin amorphous materials to validate the effectiveness of our synthesis approach. Furthermore, we have fabricated metal-insulator-metal (MIM) diodes using the TiO 2 and Ta 2 O 5 as ultrathin insulating layers with low potential barrier heights. Our MIM diodes show a clear transition from direct tunneling to Fowler-Nordheim tunneling, which was not observed in previously reported MIM diodes with TiO 2 or Ta 2 O 5 as the insulating layer. We attribute the improved performance of our MIM diodes to the excellent flatness and low pinhole/defect densities in our TMO insulting layers converted from 2D TMDs, which enable the low-threshold and controllable electron tunneling transport. We envision that it is possible to use the ultrathin TMOs converted from 2D TMDs as the insulating layer of a wide variety of metal-insulator and field-effect electronic devices for various applications ranging from microwave mixing, parametric conversion, infrared photodetection, emissive energy harvesting, to ultrafast electronic switching.

Nitrogen-doping of bulk and nanotubular TiO2 photocatalysts by plasma-assisted atomic layer deposition

NASA Astrophysics Data System (ADS)

Zhang, Yi; Creatore, Mariadriana; Ma, Quan-Bao; El Boukili, Aishah; Gao, Lu; Verheijen, Marcel A.; Verhoeven, M. W. G. M. (Tiny); Hensen, Emiel. J. M.

2015-03-01

Plasma-assisted atomic layer deposition (PA-ALD) was adopted to deposit TiO2-xNx ultrathin layers on Si wafers, calcined Ti foils and nanotubular TiO2 arrays. A range of N content and chemical bond configurations were obtained by varying the background gas (O2 or N2) during the Ti precursor exposure, while the N2/H2-fed inductively coupled plasma exposure time was varied between 2 and 20 s. On calcined Ti foils, a positive effect from N doping on photocurrent density was observed when O2 was the background gas with a short plasma exposure time (5 and 10 s). This correlates with the presence of interstitial N states in the TiO2 with a binding energy of 400 eV (Ninterst) as measured by X-ray photoelectron spectroscopy. A longer plasma time or the use of N2 as background gas results in formation of N state with a binding energy of 396 eV (Nsubst) and very low photocurrents. These Nsubst are linked to the presence of Ti3+, which act as detrimental recombination center for photo-generated electron-hole pairs. On contrary, PA-ALD treated nanotubular TiO2 arrays show no variation of photocurrent density (with respect to the pristine nanotubes) upon different plasma exposure times and when the O2 recipe was adopted. This is attributed to constant N content in the PA-ALD TiO2-xNx, regardless of the adopted recipe.

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors

NASA Astrophysics Data System (ADS)

Jinjuan, Xiang; Yuqiang, Ding; Liyong, Du; Junfeng, Li; Wenwu, Wang; Chao, Zhao

2016-03-01

TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atomic layer deposition method using TiCl4 and Al(CH3)3(TMA) as precursors. It is found that the major product of the TiCl4 and TMA reaction is TiAlC, and the components of C and Al are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The reaction mechanism is as follows. Ti is generated through the reduction of TiCl4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TiCl4 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving Al into the TiC film and leading to TiAlC formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and Al in the TiAlC film. Thus, the film composition can be controlled by the growth temperature to a certain extent. Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China (Grant No. 2013ZX02303).

Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO{sub 3}){sub n} films by means of metalorganic aerosol deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungbauer, M.; Hühn, S.; Moshnyaga, V.

2014-12-22

We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO{sub 3}){sub n} (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO{sub 3}(001) substrates by means of a sequential deposition of Sr-O/Ti-O{sub 2} atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidlymore » decreases and saturates after 5–6 repetitions of the SrO(SrTiO{sub 3}){sub 4} block at the level of 2.4%. This identifies the SrTiO{sub 3} substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy.« less

The Atomic Structure of Ti2C and Ti3C2 MXenes is Responsible for Their Antibacterial Activity Toward E. coli Bacteria

NASA Astrophysics Data System (ADS)

Jastrzębska, Agnieszka Maria; Karwowska, Ewa; Wojciechowski, Tomasz; Ziemkowska, Wanda; Rozmysłowska, Anita; Chlubny, Leszek; Olszyna, Andrzej

2018-02-01

The expanded Ti2C and Ti3C2 MXene phases were synthesized from their parent Ti2AlC and Ti3AlC2 MAX phases using the same conditions of the classical acidic aluminum extraction method. The assumption for the study was that the expanded Ti2C and Ti3C2 MXenes are composed of the same atoms and if are synthesized from MAX phases using the same conditions of the classical acidic aluminum extraction method, the observed bio-effects can be related only to the changes in their structures. The scanning electron microscope investigations indicated that the expanded Ti2C and Ti3C2 sheets formed the specific network of slit-shaped nano-pores. The x-ray photoelectron spectroscopy for chemical analysis (ESCA-XPS) showed almost no difference in surface chemistry of Ti2C and Ti3C2 MXenes. The high-resolution transmission electron microscope investigations revealed, however, differences in atomic structure of the individual Ti2C and Ti3C2 sheets. Measured distance between Ti-C atomic layers in Ti2C was 9.76 Å and was larger by 0.53 Å in comparison with Ti3C2 (9.23 Å). Our investigations of bioactive properties toward model gram-negative Escherichia coli bacterial strain showed that the Ti2C MXene did not influence the viability of bacteria. Contrarily, the Ti3C2 MXene showed antibacterial properties. The results of the study indicate that the structure at the atomic scale may play a key role in the bioactivity of MXenes of the same chemical composition, but different stoichiometry, just like in case of Ti2C and Ti3C2.

Atomic layer deposition of TiO{sub 2} from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H{sub 2}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie Qi; Jiang Yulong; Detavernier, Christophe

2007-10-15

Atomic layer deposition (ALD) of TiO{sub 2} thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds of Ti precursors and water as another reactant was investigated. TiO{sub 2} films with high purity can be grown in a self-limited ALD growth mode by using either Ti isopropoxide or TDMAT as Ti precursors. Different growth behaviors as a function of deposition temperature were observed. A typical growth rate curve-increased growth rate per cycle (GPC) with increasing temperatures was observed for the TiO{sub 2} film deposited by Ti isopropoxide and H{sub 2}O, while surprisingly high GPC was observed at lowmore » temperatures for the TiO{sub 2} film deposited by TDMAT and H{sub 2}O. An energetic model was proposed to explain the different growth behaviors with different precursors. Density functional theory (DFT) calculation was made. The GPC in the low temperature region is determined by the reaction energy barrier. From the experimental results and DFT calculation, we found that the intermediate product stability after the ligand exchange is determined by the desorption behavior, which has a huge effect on the width of the ALD process window.« less

XPS and SEM analysis of the surface of gas atomized powder precursor of ODS ferritic steels obtained through the STARS route

NASA Astrophysics Data System (ADS)

Gil, E.; Cortés, J.; Iturriza, I.; Ordás, N.

2018-01-01

An innovative powder metallurgy route to produce ODS FS, named STARS, has succeeded in atomizing steel powders containing the oxide formers (Y and Ti) and, hence, avoids the mechanical alloying (MA) step to dissolve Y in the matrix. A metastable oxide layer forms at the surface of atomized powders and dissociates during HIP consolidation at high temperatures, leading to precipitation of more stable Y-Ti-O nanoparticles.

Coating and functionalization of high density ion track structures by atomic layer deposition

NASA Astrophysics Data System (ADS)

Mättö, Laura; Szilágyi, Imre M.; Laitinen, Mikko; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo

2016-10-01

In this study flexible TiO2 coated porous Kapton membranes are presented having electron multiplication properties. 800 nm crossing pores were fabricated into 50 μm thick Kapton membranes using ion track technology and chemical etching. Consecutively, 50 nm TiO2 films were deposited into the pores of the Kapton membranes by atomic layer deposition using Ti(iOPr)4 and water as precursors at 250 °C. The TiO2 films and coated membranes were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray reflectometry (XRR). Au metal electrode fabrication onto both sides of the coated foils was achieved by electron beam evaporation. The electron multipliers were obtained by joining two coated membranes separated by a conductive spacer. The results show that electron multiplication can be achieved using ALD-coated flexible ion track polymer foils.

CoFe2O4-TiO2 and CoFe2O4-ZnO thin film nanostructures elaborated from colloidal chemistry and atomic layer deposition.

PubMed

Clavel, Guylhaine; Marichy, Catherine; Willinger, Marc-Georg; Ravaine, Serge; Zitoun, David; Pinna, Nicola

2010-12-07

CoFe(2)O(4)-TiO(2) and CoFe(2)O(4)-ZnO nanoparticles/film composites were prepared from directed assembly of colloidal CoFe(2)O(4) in a Langmuir-Blodgett monolayer and atomic layer deposition (ALD) of an oxide (TiO(2) or ZnO). The combination of these two methods permits the use of well-defined nanoparticles from colloidal chemistry, their assembly on a large scale, and the control over the interface between a ferrimagnetic material (CoFe(2)O(4)) and a semiconductor (TiO(2) or ZnO). Using this approach, architectures can be assembled with a precise control from the Angstrom scale (ALD) to the micrometer scale (Langmuir-Blodgett film). The resulting heterostructures present well-calibrated thicknesses. Electron microscopy and magnetic measurement studies give evidence that the size of the nanoparticles and their intrinsic magnetic properties are not altered by the various steps involved in the synthesis process. Therefore, the approach is suitable to obtain a layered composite with a quasi-monodisperse layer of ferrimagnetic nanoparticles embedded in an ultrathin film of semiconducting material.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

PubMed

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Atomic Layer Deposition of Pd Nanoparticles on TiO₂ Nanotubes for Ethanol Electrooxidation: Synthesis and Electrochemical Properties.

PubMed

Assaud, Loïc; Brazeau, Nicolas; Barr, Maïssa K S; Hanbücken, Margrit; Ntais, Spyridon; Baranova, Elena A; Santinacci, Lionel

2015-11-11

Palladium nanoparticles are grown on TiO2 nanotubes by atomic layer deposition (ALD), and the resulting three-dimensional nanostructured catalysts are studied for ethanol electrooxidation in alkaline media. The morphology, the crystal structure, and the chemical composition of the Pd particles are fully characterized using scanning and transmission electron microscopies, X-ray diffraction, and X-ray photoelectron spectroscopy. The characterization revealed that the deposition proceeds onto the entire surface of the TiO2 nanotubes leading to the formation of well-defined and highly dispersed Pd nanoparticles. The electrooxidation of ethanol on Pd clusters deposited on TiO2 nanotubes shows not only a direct correlation between the catalytic activity and the particle size but also a steep increase of the response due to the enhancement of the metal-support interaction when the crystal structure of the TiO2 nanotubes is modified by annealing at 450 °C in air.

Trends in (LaMnO3)n/(SrTiO3)m superlattices with varying layer thicknesses

PubMed Central

Jilili, J.; Cossu, F.; Schwingenschlögl, U.

2015-01-01

We investigate the thickness dependence of the structural, electronic, and magnetic properties of (LaMnO3)n/(SrTiO3)m (n, m = 2, 4, 6, 8) superlattices using density functional theory. The electronic structure turns out to be highly sensitive to the onsite Coulomb interaction. In contrast to bulk SrTiO3, strongly distorted O octahedra are observed in the SrTiO3 layers with a systematic off centering of the Ti atoms. The systems favour ferromagnetic spin ordering rather than the antiferromagnetic spin ordering of bulk LaMnO3 and all show half-metallicity, while a systematic reduction of the minority spin band gaps as a function of the LaMnO3 and SrTiO3 layer thicknesses originates from modifications of the Ti dxy states. PMID:26323361

Fabrication of Highly Ordered and Well-Aligned PbTiO 3/TiN Core–Shell Nanotube Arrays

DOE PAGES

Yoon, Jaesung; Kim, Sangjoon; Kim, Dongjin; ...

2015-04-30

Highly ordered and well-aligned PbTiO 3/TiN core–shell nanotubes are fabricated in this paper via an anodic aluminum oxide templating route followed by TiN and TiO 2 atomic layer deposition deposition and a subsequent PbO vapor reaction. Finally, PbTiO 3/TiN nanotubes keep their original shape after the vapor phase reaction, and they display well-defined piezoresponse hysteresis curves with remnant piezoresponse of 38 pm V -1.

Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki

2016-01-15

This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient methodmore » to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.« less

First-principles study of Ti intercalation between graphene and Au surface

NASA Astrophysics Data System (ADS)

Kaneko, T.; Imamura, H.

2011-06-01

We investigate the effects of Ti intercalation between graphene and Au surface on binding energy and charge doping by using the first-principles calculations. We show that the largest binding energy is realized by the intercalation of single mono-layer of Ti. We also show that electronic structure is very sensitive to the arrangement of metal atoms at the interface. If the composition of the interface layer is Ti0.33Au0.67 and the Ti is located at the top site, the Fermi level lies closely at the Dirac point, i.e., the Dirac cone of the ideal free-standing graphene is recovered.

Taking into Account Interelement Interference in X-Ray Fluorescence Analysis of Thin Two-Layer Ti/V Systems

NASA Astrophysics Data System (ADS)

Mashin, N. I.; Razuvaev, A. G.; Cherniaeva, E. A.; Gafarova, L. M.; Ershov, A. V.

2018-03-01

We propose a new method for determining the thickness of layers in x-ray fluorescence analysis of two-layer Ti/V systems, using easily fabricated standardized film layers obtained by sputter deposition of titanium on a polymer film substrate. We have calculated correction factors taking into account the level of attenuation for the intensity of the primary emission from the x-ray tube and the analytical line for the element of the bottom layer in the top layer, and the enhancement of the fluorescence intensity for the top layer by the emission of atoms in the bottom layer.

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.

PubMed

Zhang, Liangliang; Janotti, Anderson; Meng, Andrew C; Tang, Kechao; Van de Walle, Chris G; McIntyre, Paul C

2018-02-14

Layered atomic-layer-deposited and forming-gas-annealed TiO 2 /Al 2 O 3 dielectric stacks, with the Al 2 O 3 layer interposed between the TiO 2 and a p-type germanium substrate, are found to exhibit a significant interface charge dipole that causes a ∼-0.2 V shift of the flat-band voltage and suppresses the leakage current density for gate injection of electrons. These effects can be eliminated by the formation of a trilayer dielectric stack, consistent with the cancellation of one TiO 2 /Al 2 O 3 interface dipole by the addition of another dipole of opposite sign. Density functional theory calculations indicate that the observed interface-dependent properties of TiO 2 /Al 2 O 3 dielectric stacks are consistent in sign and magnitude with the predicted behavior of Al Ti and Ti Al point-defect dipoles produced by local intermixing of the Al 2 O 3 /TiO 2 layers across the interface. Evidence for such intermixing is found in both electrical and physical characterization of the gate stacks.

Ab Initio Study of Interfacial Structure Transformation of Amorphous Carbon Catalyzed by Ti, Cr, and W Transition Layers.

PubMed

Li, Xiaowei; Li, Lei; Zhang, Dong; Wang, Aiying

2017-11-29

Amorphous carbon (a-C) films composited with transition layers exhibit the desirable improvement of adhesion strength between films and substrate, but the further understanding on the interfacial structure transformation of a-C structure induced by transition layers is still lacked. In this paper, using ab initio calculations, we comparatively studied the interfacial structure between Ti, Cr, or W transition layers and a-C film from the atomic scale, and demonstrated that the addition of Ti, Cr, or W catalyzed the graphitic transformation of a-C structure at different levels, which provided the theoretical guidance for designing a multilayer nanocomposite film for renewed application.

Nanostructured double-layer FeO as nanotemplate for tuning adsorption of titanyl phthalocyanine molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Shuangzan; University of Chinese Academy of Sciences, Beijing 100049; Qin, Zhihui, E-mail: zhqin@wipm.ac.cn

2014-06-23

The growth, structure of Pt(111) supported double-layer FeO and the adsorption of titanyl phthalocyanine (TiOPc) molecules with tunable site and orientation were presented. According to the atomic-resolution STM image, the structure was rationalized as (8√3 × 8√3) R30°/Pt(111) nanostructure constructed by Fe species coordinated with different number of oxygen on top of non-rotated (8 × 8) FeO /Pt(111) structure. Due to the modulation of the stacking of Fe atoms in the second layer relative to the O atoms in the second layer and the underlying layer, the interface and total dipole moment periodically vary within (8√3 × 8√3) R30°/Pt(111) structure. The resulted periodically distributed dipole-dipole interactionmore » benefits the growth of TiOPc molecules with area-selective sites and molecular orientations. Thus, this study provides a reliable method to govern the adsorption process of the polar molecules for potential applications in future functional molecular devices.« less

Layered surface structure of gas-atomized high Nb-containing TiAl powder and its impact on laser energy absorption for selective laser melting

NASA Astrophysics Data System (ADS)

Zhou, Y. H.; Lin, S. F.; Hou, Y. H.; Wang, D. W.; Zhou, P.; Han, P. L.; Li, Y. L.; Yan, M.

2018-05-01

Ti45Al8Nb alloy (in at.%) is designed to be an important high-temperature material. However, its fabrication through laser-based additive manufacturing is difficult to achieve. We present here that a good understanding of the surface structure of raw material (i.e. Ti45Al8Nb powder) is important for optimizing its process by selective laser melting (SLM). Detailed X-ray photoelectron spectroscopy (XPS) depth profiling and transmission electron microscopy (TEM) analyses were conducted to determine the surface structure of Ti45Al8Nb powder. An envelope structure (∼54.0 nm in thickness) was revealed for the powder, consisting of TiO2 + Nb2O5 (as the outer surface layer)/Al2O3 + Nb2O5 (as the intermediate layer)/Al2O3 (as the inner surface layer)/Ti45Al8Nb (as the matrix). During SLM, this layered surface structure interacted with the incident laser beam and improved the laser absorptivity of Ti45Al8Nb powder by ∼32.21%. SLM experiments demonstrate that the relative density of the as-printed parts can be realized to a high degree (∼98.70%), which confirms good laser energy absorption. Such layered surface structure with appropriate phase constitution is essential for promoting SLM of the Ti45Al8Nb alloy.

Structural Secrets of Multiferroic Interfaces

NASA Astrophysics Data System (ADS)

Meyerheim, H. L.; Klimenta, F.; Ernst, A.; Mohseni, K.; Ostanin, S.; Fechner, M.; Parihar, S.; Maznichenko, I. V.; Mertig, I.; Kirschner, J.

2011-02-01

We present an experimental and theoretical study of the geometric structure of ultrathin BaTiO3 films grown on Fe(001). Surface x-ray diffraction reveals that the films are terminated by a BaO layer, while the TiO2 layer is next to the top Fe layer. Cations in termination layers have incomplete oxygen shells inducing strong vertical relaxations. Onset of polarization is observed at a minimum thickness of two unit cells. Our findings are supported by first-principles calculations providing a quantitative insight into the multiferroic properties on the atomic scale.

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

DOE PAGES

Hsu, Weitse; Sutter-Fella, Carolin M.; Hettick, Mark; ...

2015-11-03

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UVmore » part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2/CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.« less

Spin texture induced by oxygen vacancies in strontium perovskite (001) surfaces: A theoretical comparison between SrTiO3 and SrHfO3

NASA Astrophysics Data System (ADS)

Garcia-Castro, A. C.; Vergniory, M. G.; Bousquet, E.; Romero, A. H.

2016-01-01

The electronic structure of SrTiO3 and SrHfO3 (001) surfaces with oxygen vacancies is studied by means of first-principles calculations. We reveal how oxygen vacancies within the first atomic layer of the SrTiO3 surface (i) induce a large antiferrodistortive motion of the oxygen octahedra at the surface, (ii) drive localized magnetic moments on the Ti 3 d orbitals close to the vacancies, and (iii) form a two-dimensional electron gas localized within the first layers. The analysis of the spin texture of this system exhibits a splitting of the energy bands according to the Zeeman interaction, lowering of the Ti 3 dx y level in comparison with dx z and dy z, and also an in-plane precession of the spins. No Rashba-like splitting for the ground state or for the ab initio molecular dynamics trajectory at 400 K is recognized as suggested recently by A. F. Santander-Syro et al. [Nat. Mater. 13, 1085 (2014), 10.1038/nmat4107]. Instead, a sizable Rashba-like splitting is observed when the Ti atom is replaced by a heavier Hf atom with a much larger spin-orbit interaction. However, we observe the disappearance of the magnetism and the surface two-dimensional electron gas when full structural optimization of the SrHfO3 surface is performed. Our results uncover the sensitive interplay of spin-orbit coupling, atomic relaxations, and magnetism when tuning these Sr-based perovskites.

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

Quantum Chemical Study of Water Adsorption on the Surfaces of SrTiO3 Nanotubes.

PubMed

Bandura, Andrei V; Kuruch, Dmitry D; Evarestov, Robert A

2015-07-20

We have studied the adsorption of water molecules on the inner and outer surfaces of nanotubes generated by rolling (001) layers of SrTiO3 cubic crystals. The stability and the atomic and electronic structures of the adsorbed layers are determined by using hybrid density functional theory. The absorption energy and the preferred adsorbate structure are essentially governed by the nature of the surface of the nanotube. Dissociative adsorption prevails on the outer nanotube surfaces. The stability of the adsorbed layers on the inner surfaces is related to the possibility of the formation of hydrogen bonds between water molecules and surface oxygen atoms, and depends on the surface curvature. The presence of water molecules on the inner surface of the nanotubes leads to an increase of the electronic band gap. Externally TiO2 -terminated nanotubes could be used for the photocatalytic decomposition of water by ultraviolet radiation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Processing of catalysts by atomic layer epitaxy: modification of supports

NASA Astrophysics Data System (ADS)

Lindblad, Marina; Haukka, Suvi; Kytökivi, Arla; Lakomaa, Eeva-Liisa; Rautiainen, Aimo; Suntola, Tuomo

1997-11-01

Different supports were modified with titania, zirconia and chromia by the atomic layer epitaxy technique (ALE). In ALE, a metal precursor is bound to the support in saturating gas-solid reactions. Surface oxides are grown by alternating reactions of the metal precursor and an oxidizing agent. Growth mechanisms differ depending on the precursor-support pair and the processing conditions. In this work, the influences of the support, precursor and reaction temperature were investigated by comparing the growth of titania from Ti(OCH(CH 3) 2) 4 on silica and alumina, titania from TiCl 4 and Ti(OCH(CH 3) 2) 4 on silica, and zirconia from ZrCl 4 on silica and alumina. The modification of porous oxides supported on metal substrates (monoliths) was demonstrated for the growth of chromia from Cr(acac) 3.

Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

NASA Astrophysics Data System (ADS)

An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

2015-10-01

Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

Titanium doped silicon layers with very high concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olea, J.; Toledano-Luque, M.; Pastor, D.

2008-07-01

Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10{sup 18} cm{sup -3}. Hall effect measurements show n-type samples with mobility values of about 400 cm{sup 2}/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Simore » wafers.« less

Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

NASA Astrophysics Data System (ADS)

Wan; Zhang, Teng Fei; Ding, Ji Cheng; Kim, Chang-Min; Park, So-Won; Yang, Yang; Kim, Kwang-Ho; Kwon, Se-Hun

2017-04-01

Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD). The strategy was to utilize ALD thin films as pinhole-free barriers to seal the intrinsic defects to protect the CrN matrix. The influences of the different sealing layers added in the coatings on the microstructure, surface roughness, and corrosion behaviors were investigated. The results indicated that the sealing layer added by ALD significantly decreased the average grain size and improved the corrosion resistance of the CrN coatings. The insertion of the nanolaminate-Al2O3/TiO2 sealing layers resulted in a further increase in corrosion resistance, which was attributed to the synergistic effect of Al2O3 and TiO2, both acting as excellent passivation barriers to the diffusion of corrosive substances.

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

PubMed Central

Lee, Woongkyu; Yoo, Sijung; Yoon, Kyung Jean; Yeu, In Won; Chang, Hye Jung; Choi, Jung-Hae; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong

2016-01-01

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset. PMID:26830978

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

PubMed Central

Wilson, Rachel L.; Blackman, Christopher S.; Carmalt, Claire J.; Stanoiu, Adelina; Di Maggio, Francesco

2018-01-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated. PMID:29494504

Dye-sensitized solar cells employing a SnO2-TiO2 core-shell structure made by atomic layer deposition.

PubMed

Karlsson, Martin; Jõgi, Indrek; Eriksson, Susanna K; Rensmo, Håkan; Boman, Mats; Boschloo, Gerrit; Hagfeldt, Anders

2013-01-01

This paper describes the synthesis and characterization of core-shell structures, based on SnO2 and TiO2, for use in dye-sensitized solar cells (DSC). Atomic layer deposition is employed to control and vary the thickness of the TiO2 shell. Increasing the TiO2 shell thickness to 2 nm improved the device performance of liquid electrolyte-based DSC from 0.7% to 3.5%. The increase in efficiency originates from a higher open-circuit potential and a higher short-circuit current, as well as from an improvement in the electron lifetime. SnO2-TiO2 core-shell DSC devices retain their photovoltage in darkness for longer than 500 seconds, demonstrating that the electrons are contained in the core material. Finally core-shell structures were used for solid-state DSC applications using the hole transporting material 2,2',7,7',-tetrakis(N, N-di-p-methoxyphenyl-amine)-9,9',-spirofluorene. Similar improvements in device performance were obtained for solid-state DSC devices.

Nanoporous Aluminum Oxide Membranes Coated with Atomic Layer Deposition-Grown Titanium Dioxide for Biomedical Applications: An In Vitro Evaluation.

PubMed

Petrochenko, Peter E; Kumar, Girish; Fu, Wujun; Zhang, Qin; Zheng, Jiwen; Liang, Chengdu; Goering, Peter L; Narayan, Roger J

2015-12-01

The surface topographies of nanoporous anodic aluminum oxide (AAO) and titanium dioxide (TiO2) membranes have been shown to modulate cell response in orthopedic and skin wound repair applications. In this study, we: (1) demonstrate an improved atomic layer deposition (ALD) method for coating the porous structures of 20, 100, and 200 nm pore diameter AAO with nanometer-thick layers of TiO2 and (2) evaluate the effects of uncoated AAO and TiO2-coated AAO on cellular responses. The TiO2 coatings were deposited on the AAO membranes without compromising the openings of the nanoscale pores. The 20 nm TiO2-coated membranes showed the highest amount of initial protein adsorption via the micro bicinchoninic acid (micro-BCA) assay; all of the TiO2-coated membranes showed slightly higher protein adsorption than the uncoated control materials. Cell viability, proliferation, and inflammatory responses on the TiO2-coated AAO membranes showed no adverse outcomes. For all of the tested surfaces, normal increases in proliferation (DNA content) of L929 fibroblasts were observed over from 4 hours to 72 hours. No increases in TNF-alpha production were seen in RAW 264.7 macrophages grown on TiO2-coated AAO membranes compared to uncoated AAO membranes and tissue culture polystyrene (TCPS) surfaces. Both uncoated AAO membranes and TiO2-coated AAO membranes showed no significant effects on cell growth and inflammatory responses. The results suggest that TiO2-coated AAO may serve as a reasonable prototype material for the development of nanostructured wound repair devices and orthopedic implants.

Formation of Cr-modified silicide coatings on a Ti-Nb-Si based ultrahigh-temperature alloy by pack cementation process

NASA Astrophysics Data System (ADS)

Qiao, Yanqiang; Guo, Xiping

2010-10-01

Cr-modified silicide coatings were prepared on a Ti-Nb-Si based ultrahigh temperature alloy by Si-Cr co-deposition at 1250 °C, 1350 °C and 1400 °C for 5-20 h respectively. It was found that both coating structure and phase constituents changed significantly with increase in the co-deposition temperature and holding time. The outer layers in all coatings prepared at 1250 °C for 5-20 h consisted of (Ti,X) 5Si 3 (X represents Nb, Cr and Hf elements). (Ti,X) 5Si 4 was found as the only phase constituent in the intermediate layers in both coatings prepared at 1250 °C for 5 and 10 h, but the intermediate layers in the coatings prepared at 1250 °C for 15 and 20 h were mainly composed of (Ti,X) 5Si 3 phase that was derived from the decomposition of (Ti,X) 5Si 4 phase. In the coating prepared at 1350 °C for 5 h, single (Ti,X) 5Si 3 phase was found in its outmost layer, the same as that in the outer layers in the coatings prepared at 1250 °C; but in the coatings prepared at 1350 °C for 10-20 h, (Nb 1.95Cr 1.05)Cr 2Si 3 ternary phase was found in the outmost layers besides (Ti,X) 5Si 3 phase. In the coatings prepared at 1400 °C for 5-20 h, (Nb 1.95Cr 1.05)Cr 2Si 3 ternary phase was the single phase constituent in their outmost layers. The phase transformation (Ti,X) 5Si 4 → (Ti,X) 5Si 3 + Si occurred in the intermediate layers of the coatings prepared at 1350 and 1400 °C with prolonging co-deposition time, similar to the situation in the coatings prepared at 1250 °C for 15 and 20 h, but this transformation has been speeded up by increase in the co-deposition temperature. The transitional layers were mainly composed of (Ti,X) 5Si 3 phase in all coatings. The influence of co-deposition temperature on the diffusion ability of Cr atoms was greater than that of Si atoms in the Si-Cr co-deposition processes investigated. The growth of coatings obeyed inverse logarithmic laws at all three co-deposition temperatures. The Si-Cr co-deposition coating prepared at 1350 °C for 10 h showed a good oxidation resistance due to the formation of SiO 2 and Nb, Cr-doped TiO 2 scale after oxidation at 1250 °C for 10 h.

Influence of Different Defects in Vertically Aligned Carbon Nanotubes on TiO2 Nanoparticle Formation through Atomic Layer Deposition.

PubMed

Acauan, Luiz; Dias, Anna C; Pereira, Marcelo B; Horowitz, Flavio; Bergmann, Carlos P

2016-06-29

The chemical inertness of carbon nanotubes (CNT) requires some degree of "defect engineering" for controlled deposition of metal oxides through atomic layer deposition (ALD). The type, quantity, and distribution of such defects rules the deposition rate and defines the growth behavior. In this work, we employed ALD to grow titanium oxide (TiO2) on vertically aligned carbon nanotubes (VACNT). The effects of nitrogen doping and oxygen plasma pretreatment of the CNT on the morphology and total amount of TiO2 were systematically studied using transmission electron microscopy, Raman spectroscopy, and thermogravimetric analysis. The induced chemical changes for each functionalization route were identified by X-ray photoelectron and Raman spectroscopies. The TiO2 mass fraction deposited with the same number of cycles for the pristine CNT, nitrogen-doped CNT, and plasma-treated CNT were 8, 47, and 80%, respectively. We demonstrate that TiO2 nucleation is dependent mainly on surface incorporation of heteroatoms and their distribution rather than structural defects that govern the growth behavior. Therefore, selecting the best way to functionalize CNT will allow us to tailor TiO2 distribution and hence fabricate complex heterostructures.

Interface Engineering through Atomic Layer Deposition towards Highly Improved Performance of Dye-Sensitized Solar Cells

PubMed Central

Lu, Hao; Tian, Wei; Guo, Jun; Li, Liang

2015-01-01

A composite photoanode comprising ultralong ZnO nanobelts and TiO2 nanoparticles was prepared and its performance in dye-sensitized solar cells (DSSCs) was optimized and compared to the photoanode consisting of conventional TiO2 nanoparticles. The ultralong ZnO nanobelts were synthesized in high yield by a facile solution approach at 90 oC followed by annealing at 500 oC. The effect of the ratio of ZnO nanobelts to TiO2 nanoparticles on the light scattering, specific surface area, and interface recombination were investigated. An optimum amount of ZnO nanobelts enhanced the photon-conversion efficiency by 61.4% compared to that of the conventional TiO2 nanoparticles. To further reduce the recombination rate and increase the carrier lifetime, Atomic Layer Deposition (ALD) technique was utilized to coat a continuous TiO2 film surrounding the ZnO nanobelts and TiO2 nanoparticles, functioning as a barrier-free access of all electrons to conductive electrodes. This ALD treatment improved the interface contact within the whole photoanode system, finally leading to significant enhancement (137%) in the conversion efficiency of DSSCs. PMID:26238737

Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

2016-01-18

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurementmore » revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.« less

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

NASA Astrophysics Data System (ADS)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Amorphous TiO 2 Compact Layers via ALD for Planar Halide Perovskite Photovoltaics

DOE PAGES

Kim, In Soo; Haasch, Richard T.; Cao, Duyen H.; ...

2016-09-06

A low temperature (< 120 °C) route to pinhole-free amorphous TiO 2 compact layers may pave the way to more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize low-temperature thermal atomic layer deposition (ALD) to synthesize ultra-thin (12 nm) compact TiO 2 underlayers for planar halide perovskite PV. While device performance with as-deposited TiO 2 films is poor, we identify room temperature UV-O 3 treatment as a route to device efficiency comparable to crystalline TiO 2 thin films synthesized by higher temperature methods. Here, we further explore the chemical, physical, and interfacial properties 2more » that might explain the improved performance through x-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, and x-ray photoelectron spectroscopy. These findings challenge our intuition about effective electron selective layers as well as point the way to a greater selection of flexible substrates and more stable inverted device designs.« less

Influence of substrate material and surface finishing on the morphology of the calcium-phosphate coating.

PubMed

Leitão, E; Barbosa, M A; de Groot, K

1997-07-01

The formation of an apatite-like layer was achieved by immersing Ti-6A1-4V, Ti-Al-2.5Fe, and 316 L stainless-steel substrata in Hank's balanced salt solution (HBSS). The layer was characterized by surface analysis techniques, namely X-ray microanalysis and X-ray diffraction, and the morphology was observed by scanning electron microscopy and atomic force microscopy. The concentrations of Ca and P were monitored as a function of time. The morphology of the precipitate layer seems to be dependent both on the type of metal substrate and its surface finish. Polished Ti-6A1-4V and Ti-Al-2.5Fe surfaces exhibit a plate precipitate morphology, whereas rougher surfaces show scattered crystal-like precipitation. The results suggest that the layer produced by immersion of polished titanium alloys in HBSS is constituted by an amorphous apatite.

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

Structural secrets of multiferroic interfaces.

PubMed

Meyerheim, H L; Klimenta, F; Ernst, A; Mohseni, K; Ostanin, S; Fechner, M; Parihar, S; Maznichenko, I V; Mertig, I; Kirschner, J

2011-02-25

We present an experimental and theoretical study of the geometric structure of ultrathin BaTiO(3) films grown on Fe(001). Surface x-ray diffraction reveals that the films are terminated by a BaO layer, while the TiO(2) layer is next to the top Fe layer. Cations in termination layers have incomplete oxygen shells inducing strong vertical relaxations. Onset of polarization is observed at a minimum thickness of two unit cells. Our findings are supported by first-principles calculations providing a quantitative insight into the multiferroic properties on the atomic scale. © 2011 American Physical Society

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices.

PubMed

Takizawa, M; Wadati, H; Tanaka, K; Hashimoto, M; Yoshida, T; Fujimori, A; Chikamatsu, A; Kumigashira, H; Oshima, M; Shibuya, K; Mihara, T; Ohnishi, T; Lippmaa, M; Kawasaki, M; Koinuma, H; Okamoto, S; Millis, A J

2006-08-04

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. A finite coherent spectral weight with a clear Fermi cutoff was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an "electronic reconstruction" occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (approximately 1000 degrees C), which leads to Sr/La atomic interdiffusion and hence to the formation of La(1-x)Sr(x)TiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cutoff was enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.

Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate

NASA Astrophysics Data System (ADS)

Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn

2009-04-01

In this study, a charge-trapping-layer-engineered nanoscale n-channel trigate TiN nanocrystal nonvolatile memory was successfully fabricated on silicon-on-insulator (SOI) wafer. An Al2O3 high-k blocking dielectric layer and a P+ polycrystalline silicon gate electrode were used to obtain low operation voltage and suppress the back-side injection effect, respectively. TiN nanocrystals were formed by annealing TiN/Al2O3 nanolaminates deposited by an atomic layer deposition system. The memory characteristics of various samples with different TiN wetting layer thicknesses, post-deposition annealing times, and blocking oxide thicknesses were also investigated. The sample with a thicker wetting layer exhibited a much larger memory window than other samples owing to its larger nanocrystal size. Good retention with a mere 12% charge loss for up to 10 years and high endurance were also obtained. Furthermore, gate disturbance and read disturbance were measured with very small charge migrations after a 103 s stressing bias.

Atomic-scale recognition of surface structure and intercalation mechanism of Ti3C2X.

PubMed

Wang, Xuefeng; Shen, Xi; Gao, Yurui; Wang, Zhaoxiang; Yu, Richeng; Chen, Liquan

2015-02-25

MXenes represent a large family of functionalized two-dimensional (2D) transition-metal carbides and carbonitrides. However, most of the understanding on their unique structures and applications stops at the theoretical suggestion and lack of experimental support. Herein, the surface structure and intercalation chemistry of Ti3C2X are clarified at the atomic scale by aberration-corrected scanning transmission electron microscope (STEM) and density functional theory (DFT) calculations. The STEM studies show that the functional groups (e.g., OH(-), F(-), O(-)) and the intercalated sodium (Na) ions prefer to stay on the top sites of the centro-Ti atoms and the C atoms of the Ti3C2 monolayer, respectively. Double Na-atomic layers are found within the Ti3C2X interlayer upon extensive Na intercalation via two-phase transition and solid-solution reactions. In addition, aluminum (Al)-ion intercalation leads to horizontal sliding of the Ti3C2X monolayer. On the basis of these observations, the previous monolayer surface model of Ti3C2X is modified. DFT calculations using the new modeling help to understand more about their physical and chemical properties. These findings enrich the understanding of the MXenes and shed light on future material design and applications. Moreover, the Ti3C2X exhibits prominent rate performance and long-term cycling stability as an anode material for Na-ion batteries.

A Study of Ziegler–Natta Propylene Polymerization Catalysts by Spectroscopic Methods

PubMed Central

Tkachenko, Olga P.; Kucherov, Alexey V.; Kustov, Leonid M.; Virkkunen, Ville; Leinonen, Timo; Denifl, Peter

2017-01-01

Ziegler–Natta polymerization catalysts were characterized by a complex of surface- and bulk-sensitive methods (DRIFTS, XPS, ESR, and XAS = XANES + EXAFS). A diffuse-reflectance Fourier-transform IR spectroscopy (DRIFTS) study showed the presence of strong Lewis acid sites in different concentrations and absence of strong basic sites in the polymerization catalysts. X-ray photoelectron spectroscopy (XPS), electron-spin resonance (ESR), and (X-ray absorption near-edge structure (XANES) analysis revealed the presence of Ti4+, Ti3+, Ti2+, and Ti1+ species in the surface layers and in the bulk of catalysts. The samples under study differ drastically in terms of the number of ESR-visible paramagnetic sites. The EXAFS study shows the presence of a Cl atom as a nearest neighbor of the absorbing Ti atom. PMID:28772850

Electronic properties of atomic layer deposition films, anatase and rutile TiO2 studied by resonant photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Das, C.; Richter, M.; Tallarida, M.; Schmeisser, D.

2016-07-01

The TiO2 films are prepared by atomic layer deposition (ALD) method using titanium isopropoxide precursors at 250 °C and analyzed using resonant photoemission spectroscopy (resPES). We report on the Ti2p and O1s core levels, on the valence band (VB) spectra and x-ray absorption spectroscopy (XAS) data, and on the resonant photoelectron spectroscopy (resPES) profiles at the O1s and the Ti3p absorption edges. We determine the elemental abundance, the position of the VB maxima, the partial density of states (PDOS) in the VB and in the conduction band (CB) and collect these data in a band scheme. In addition, we analyze the band-gap states as well as the intrinsic states due to polarons and charge-transfer excitations. These states are found to cause multiple Auger decay processes upon resonant excitation. We identify several of these processes and determine their relative contribution to the Auger signal quantitatively. As our resPES data allow a quantitative analysis of these defect states, we determine the relative abundance of the PDOS in the VB and in CB and also the charge neutrality level. The anatase and rutile polymorphs of TiO2 are analyzed in the same way as the TiO2 ALD layer. The electronic properties of the TiO2 ALD layer are compared with the anatase and rutile polymorphs of TiO2. In our comparative study, we find that ALD has its own characteristic electronic structure that is distinct from that of anatase and rutile. However, many details of the electronic structure are comparable and we benefit from our spectroscopic data and our careful analysis to find these differences. These can be attributed to a stronger hybridization of the O2p and Ti3d4s states for the ALD films when compared to the anatase and rutile polymorphs.

High-carrier-density phase in LaTiO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

Park, Se Young; Rabe, Karin; Millis, Andrew

2015-03-01

We investigate superlattices composed of alternating layers of Mott insulating LaTiO3 and band insulating SrTiO3 from first principles, using the density functional theory plus U (DFT+U) method. For values of U above a critical threshold, we find that melting of the Mott-insulating phase can extend from the interface into the LaTiO3 layer, resulting in a sheet carrier density exceeding the density of 0.5 electrons per in-plane unit cell found in previous studies. The critical U for the melting transition is larger than the critical Coulomb correlation required for the insulating LaTiO3, suggesting the existence of a high sheet carrier density phase in LaTiO3/SrTiO3 superlattices. The effects of in-plane strain and varying layer thickness on the melting transition are discussed. For insulating superlattices, we study the strain and thickness dependence of the polarization and its relation to near-interface local atomic distortions. Support: DOE ER 046169, ONR N00014-11-0666.

Mesoporous TiO2 Bragg Stack Templated by Graft Copolymer for Dye-sensitized Solar Cells

PubMed Central

Park, Jung Tae; Chi, Won Seok; Kim, Sang Jin; Lee, Daeyeon; Kim, Jong Hak

2014-01-01

Organized mesoporous TiO2 Bragg stacks (om-TiO2 BS) consisting of alternating high and low refractive index organized mesoporous TiO2 (om-TiO2) films were prepared to enhance dye loading, light harvesting, electron transport, and electrolyte pore-infiltration in dye-sensitized solar cells (DSSCs). The om-TiO2 films were synthesized via a sol-gel reaction using amphiphilic graft copolymers consisting of poly(vinyl chloride) backbones and poly(oxyethylene methacrylate) side chains, i.e., PVC-g-POEM as templates. To generate high and low index films, the refractive index of om-TiO2 film was tuned by controlling the grafting ratio of PVC-g-POEM via atomic transfer radical polymerization (ATRP). A polymerized ionic liquid (PIL)-based DSSC fabricated with a 1.2-μm-thick om-TiO2 BS-based photoanode exhibited an efficiency of 4.3%, which is much higher than that of conventional DSSCs with a nanocrystalline TiO2 layer (nc-TiO2 layer) (1.7%). A PIL-based DSSC with a heterostructured photoanode consisting of 400-nm-thick organized mesoporous TiO2 interfacial (om-TiO2 IF) layer, 7-μm-thick nc-TiO2, and 1.2-μm-thick om-TiO2 BS as the bottom, middle and top layers, respectively, exhibited an excellent efficiency of 7.5%, which is much higher than that of nanocrystaline TiO2 photoanode (3.5%). PMID:24980936

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

2018-06-01

In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

NASA Astrophysics Data System (ADS)

Bilo, Fabjola; Borgese, Laura; Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina; Pazzaglia, Ugo; Depero, Laura E.

2015-12-01

We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co-Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO2. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO2 layer, the lower is the metal migration.

A new bimetallic plasmonic photocatalyst consisting of gold(core)-copper(shell) nanoparticle and titanium(IV) oxide support

NASA Astrophysics Data System (ADS)

Sato, Yuichi; Naya, Shin-ichi; Tada, Hiroaki

2015-10-01

Ultrathin Cu layers (˜2 atomic layers) have been selectively formed on the Au surfaces of Au nanoparticle-loaded rutile TiO2 (Au@Cu/TiO2) by a deposition precipitation-photodeposition technique. Cyclic voltammetry and photochronopotentiometry measurements indicate that the reaction proceeds via the underpotential deposition. The ultrathin Cu shell drastically increases the activity of Au/TiO2 for the selective oxidation of amines to the corresponding aldehydes under visible-light irradiation (λ > 430 nm). Photochronoamperometry measurements strongly suggest that the striking Cu shell effect stems from the enhancement of the charge separation in the localized surface plasmon resonance-excited Au/TiO2.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Oxygen-implanted induced formation of oxide layer enhances blood compatibility on titanium for biomedical applications.

PubMed

Hung, Wei-Chiang; Chang, Fang-Mo; Yang, Tzu-Sen; Ou, Keng-Liang; Lin, Che-Tong; Peng, Pei-Wen

2016-11-01

Titanium dioxide (TiO2) layers were prepared on a Ti substrate by using oxygen plasma immersion ion implantation (oxygen PIII). The surface chemical states, structure, and morphology of the layers were studied using X-ray photoelectron spectroscopy, X-ray diffraction, Raman microscopy, atomic force microscopy and scanning electron microscope. The mechanical properties, such as the Young's modulus and hardness, of the layers were investigated using nanoindentation testing. The Ti(4+) chemical state was determined to be present on oxygen-PIII-treated surfaces, which consisted of nanocrystalline TiO2 with a rutile structure. Compared with Ti substrates, the oxygen-PIII-treated surfaces exhibited decreased Young's moduli and hardness. Parameters indicating the blood compatibility of the oxygen-PIII-treated surfaces, including the clotting time and platelet adhesion and activation, were studied in vitro. Clotting time assays indicated that the clotting time of oxygen-PIII-treated surfaces was longer than that of the Ti substrate, which was associated with decreased fibrinogen adsorption. In conclusion, the surface characteristics and the blood compatibility of Ti implants can be modified and improved using oxygen PIII. Copyright © 2016 Elsevier B.V. All rights reserved.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

NASA Astrophysics Data System (ADS)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Liwang; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

2016-01-15

Atomic layer deposition is used to form TiO{sub 2} films from tetrakis dimethyl amino titanium and H{sub 2}O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy. An increase in the deposition temperature up to 250 °C leads to enhancement of the native oxide removal. For depositions at 300 °C and above, interface reoxidation is observed during the initial deposition cycles but when the films are thicker than 3 nm, the surface oxides are removed steadily. Based on these observations, two distinct filmmore » growth regimes are identified; up to 250 °C, layer-by-layer dominates while at higher temperatures island growth takes over. Angle resolved x-ray photoelectron spectroscopy measurements performed on 3 nm TiO{sub 2} film deposited at 325 °C on both surfaces demonstrates a very important difference between the two substrates: for GaAs the native oxides remaining in the stack are localized at the interface, while for InAs(100), the indium oxides are mixed in the TiO{sub 2} film.« less

Enhancement of spin-lattice coupling in nanoengineered oxide films and heterostructures by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xi, Xiaoxing

The objective of the proposed research is to investigate nanoengineered oxide films and multilayer structures that are predicted to show desirable properties. The main focus of the project is an atomic layer-by-layer laser MBE (ALL-Laser MBE ) technique that is superior to the conventional laser MBE in broadening the conditions for the synthesis of high quality nanoscale oxides and new designer materials. In ALL-Laser MBE, separate oxide targets are used instead of one compound target in the conventional laser MBE. The targets are switched back and forth in front of a UV laser beam as they are alternately ablated. Themore » oxide film is thus constructed one atomic layer at a time. The growth of each atomic layer is monitored and controlled by the reflection high energy electron diffraction (RHEED). The intensity of the diffraction spots increases or decreases depending on the chemistry of each atomic layer as well as the surface roughness. This allows us to determine whether the chemical ratio of the different elements in the films meets the desired value and whether each atomic layer is complete. ALL-Laser MBE is versatile: it works for non-polar film on non-polar substrate, polar film on polar substrate, and polar film on non-polar substrate. (In a polar material, each atomic layer is charged whereas in a non-polar material the atomic layers are charge neutral.) It allows one to push the thermodynamic boundary further in stabilizing new phases than reactive MBE and PLD, two of the most successful techniques for oxide thin films. For example, La 5Ni 4O 13, the Ruddlesden-Popper phase with n = 4, has never been reported in the literature because it needs atomic layer-by-layer growth at high oxygen pressures, not possible with other growth techniques. ALL-Laser MBE makes it possible. We have studied the interfacial 2-dimensional electron gas in the LaAlO 3/SrTiO 3 system, whose mechanism has been a subject of controversy. According to the most prevailing electronic reconstruction mechanism, a positive diverging electric potential is built up in the polar LaAlO 3 film when it is grown on a TiO 2-terminated SrTiO 3 substrate, which is non-polar. This leads to the transfer of half of an electron from the LaAlO 3 film surface to SrTiO 3 when the LaAlO 3 layer is thicker than 4 unit cells, creating a 2D electron gas at the interface with a sheet carrier density of 3.3×10 14/cm 2 for sufficiently thick LaAlO 3. A serious inconsistency with this mechanism is that the carrier densities reported experimentally are invariably lower than the expected value. The most likely reason is that the SrTiO 3 substrate is oxygen difficient due to the low oxygen pressures (< 10 mTorr) during growth, and post-growth annealing in oxygen is often used to remove the oxygen vacancies. People cannot grow the LaAlO 3 film in higher oxygen pressures - it results in insulating samples or 3D island growth. Because we grow the LaAlO 3 film one atomic layer at a time, we were able to grow conducting LaAlO 3/SrTiO 3 interfaces at a high oxygen pressure with ALL-Laser MBE, as high as 37 mTorr. The high oxygen pressure helps to prevent the possible oxygen reduction in SrTiO 3, ensure that the LaAlO 3 films are sufficiently oxygenated. Measurements of x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) both show that the spectra of our films are similar to those of well oxygenated samples. In the LaAlO 3/SrTiO 3 interfaces grown by ALL-Laser MBE at 37 mTorr oxygen pressure, a quantitative agreement between our experimental result and the theoretical prediction was observed, which provides a strong support to the electronic reconstruction mechanism. The key differences between our result and the previous reports are the high oxygen pressure during the film growth and the high film crystallinity. The high oxygen pressure suppresses the likelihood of oxygen vacancies in SrTiO 3. Well oxygenated samples produced during film growth can avoid possible defects when sufficient oxygen is provided only after the growth by annealing. Using ALL-Laser MBE, we also synthesized high-quality singlec-rystalline CaMnO 3 films. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft x-ray XAS and hard x-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. The strain-induced oxygen-vacancy formation and ordering are a promising avenue for designing and controlling new functionalities in complex transition-metal oxides.« less

Interdiffusion-driven synthesis of tetragonal chromium (III) oxide on BaTi O3

NASA Astrophysics Data System (ADS)

Asa, M.; Vinai, G.; Hart, J. L.; Autieri, C.; Rinaldi, C.; Torelli, P.; Panaccione, G.; Taheri, M. L.; Picozzi, S.; Cantoni, M.

2018-03-01

Interfaces play a crucial role in the study of novel phenomena emerging at heterostructures comprising metals and functional oxides. For this reason, attention should be paid to the interface chemistry, which can favor the interdiffusion of atomic species and, under certain conditions, lead to the formation of radically different compounds with respect to the original constituents. In this work, we consider Cr/BaTi O3 heterostructures grown on SrTi O3 (100) substrates. Chromium thin films (1-2 nm thickness) are deposited by molecular beam epitaxy on the BaTi O3 layer, and subsequently annealed in vacuum at temperatures ranging from 473 to 773 K. A disordered metallic layer is detected for annealing temperatures up to 573 K, whereas, at higher temperatures, we observe a progressive oxidation of chromium, which we relate to the thermally activated migration of oxygen from the substrate. The chromium oxidation state is +3 and the film shows a defective rocksalt structure, which grows lattice matched on the underlying BaTi O3 layer. One out of every three atoms of chromium is missing, producing an uncommon tetragonal phase with C r2O3 stoichiometry. Despite the structural difference with respect to the ordinary corundum α-C r2O3 phase, we demonstrate both experimentally and theoretically that the electronic properties of the two phases are, to a large extent, equivalent.

Observation of hidden atomic order at the interface between Fe and topological insulator Bi2Te3.

PubMed

Sánchez-Barriga, Jaime; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Volykhov, Andrey A; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I; Koch, Roland J; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V

2017-11-22

To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi 2 Te 3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi 2 Te 3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi 2 Te 3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2-5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi 2 Te 3 leading to the formation of septuple layers of Bi 3 Te 4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices.

Core-shell Si@TiO 2 nanosphere anode by atomic layer deposition for Li-ion batteries

DOE PAGES

Dai, Sheng

2016-01-28

Silicon (Si) is regarded as next-generation anode for high-energy lithium-ion batteries (LIBs) due to its high Li storage capacity (4200 mA h g -1). However, the mechanical degradation and resultant capacity fade critically hinder its practical application. In this regard, we demonstrate that nanocoating of Si spheres with a 3 nm titanium dioxide (TiO 2) layer via atomic layer deposition (ALD) can utmostly balance the high conductivity and the good structural stability to improve the cycling stability of Si core material. The resultant sample, Si@TiO 2-3 nm core–shell nanospheres, exhibits the best electrochemical performance of all with a highest initialmore » Coulombic efficiency and specific charge capacity retention after 50 cycles at 0.1C (82.39% and 1580.3 mA h g -1). In addition to making full advantage of the ALD technique, we believe that our strategy and comprehension in coating the electrode and the active material could provide a useful pathway towards enhancing Si anode material itself and community of LIBs.« less

Enhancement in Thermoelectric Properties of TiS2 by Sn Addition

NASA Astrophysics Data System (ADS)

Ramakrishnan, Anbalagan; Raman, Sankar; Chen, Li-Chyong; Chen, Kuei-Hsien

2018-06-01

A series of Sn added TiS2 (TiS2:Sn x ; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)1+m(TiS2-δ)n compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K2 at 373 K was obtained in TiS2:Sn0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn0.05.

First-principles calculations of the thermal stability of Ti 3SiC 2(0001) surfaces

NASA Astrophysics Data System (ADS)

Orellana, Walter; Gutiérrez, Gonzalo

2011-12-01

The energetic, thermal stability and dynamical properties of the ternary layered ceramic Ti3SiC2(0001) surface are addressed by density-functional theory calculations and molecular dynamic (MD) simulations. The equilibrium surface energy at 0 K of all terminations is contrasted with thermal stability at high temperatures, which are investigated by ab initio MD simulations in the range of 800 to 1400 °C. We find that the toplayer (sublayer) surface configurations: Si(Ti2) and Ti2(Si) show the lowest surface energies with reconstruction features for Si(Ti2). However, at high temperatures they are unstable, forming disordered structures. On the contrary, Ti1(C) and Ti2(C) despite their higher surface energies, show a remarkable thermal stability at high temperatures preserving the crystalline structures up to 1400 °C. The less stable surfaces are those terminated in C atoms, C(Ti1) and C(Ti2), which at high temperatures show surface dissociation forming amorphous TiCx structures. Two possible atomic scale mechanisms involved in the thermal stability of Ti3SiC2(0001) are discussed.

Al2O3 and TiO2 atomic layer deposition on copper for water corrosion resistance.

PubMed

Abdulagatov, A I; Yan, Y; Cooper, J R; Zhang, Y; Gibbs, Z M; Cavanagh, A S; Yang, R G; Lee, Y C; George, S M

2011-12-01

Al(2)O(3) and TiO(2) atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper to prevent water corrosion. The strategy was to utilize Al(2)O(3) ALD as a pinhole-free barrier and to protect the Al(2)O(3) ALD using TiO(2) ALD. An initial set of experiments was performed at 177 °C to establish that Al(2)O(3) ALD could nucleate on copper and produce a high-quality Al(2)O(3) film. In situ quartz crystal microbalance (QCM) measurements verified that Al(2)O(3) ALD nucleated and grew efficiently on copper-plated quartz crystals at 177 °C using trimethylaluminum (TMA) and water as the reactants. An electroplating technique also established that the Al(2)O(3) ALD films had a low defect density. A second set of experiments was performed for ALD at 120 °C to study the ability of ALD films to prevent copper corrosion. These experiments revealed that an Al(2)O(3) ALD film alone was insufficient to prevent copper corrosion because of the dissolution of the Al(2)O(3) film in water. Subsequently, TiO(2) ALD was explored on copper at 120 °C using TiCl(4) and water as the reactants. The resulting TiO(2) films also did not prevent the water corrosion of copper. Fortunately, Al(2)O(3) films with a TiO(2) capping layer were much more resilient to dissolution in water and prevented the water corrosion of copper. Optical microscopy images revealed that TiO(2) capping layers as thin as 200 Å on Al(2)O(3) adhesion layers could prevent copper corrosion in water at 90 °C for ~80 days. In contrast, the copper corroded almost immediately in water at 90 °C for Al(2)O(3) and ZnO films by themselves on copper. Ellipsometer measurements revealed that Al(2)O(3) films with a thickness of ~200 Å and ZnO films with a thickness of ~250 Å dissolved in water at 90 °C in ~10 days. In contrast, the ellipsometer measurements confirmed that the TiO(2) capping layers with thicknesses of ~200 Å on the Al(2)O(3) adhesion layers protected the copper for ~80 days in water at 90 °C. The TiO(2) ALD coatings were also hydrophilic and facilitated H(2)O wetting to copper wire mesh substrates. © 2011 American Chemical Society

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Garcia-Barriocanal, J.; Perez-Muñoz, A. M.; Sefrioui, Z.; Arias, D.; Varela, M.; Leon, C.; Pennycook, S. J.; Santamaria, J.

2013-06-01

We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa2Cu3O7 (YBCO) layers on SrTiO3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers.

A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

PubMed

Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

2011-09-01

In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

Crystalline TiO 2 grafted with poly(2-methacryloyloxyethyl phosphorylcholine) via surface-initiated atom-transfer radical polymerization

NASA Astrophysics Data System (ADS)

Zhao, Yuancong; Tu, Qiufen; Wang, Jin; Huang, Qiongjian; Huang, Nan

2010-12-01

Crystalline TiO 2 films were prepared by unbalanced magnetron sputtering and the structure was confirmed by XRD. An organic layer of 11-hydroxyundecylphosphonic acid (HUPA) was prepared on the TiO 2 films by self-assembling, and the HUPA on TiO 2 films was confirmed by FTIR analysis. Simultaneously, hydroxyl groups were introduced in the phosphonic acid molecules to provide a functionality for further chemical modification. 2-Methacryloyloxyethyl phosphorylcholine (MPC), a biomimetic monomer, was chemically grafted on the HUPA surfaces at room temperature by surface-initiated atom-transfer radical polymerization. The surface characters of TiO 2 films modified by poly-MPC were confirmed by FTIR, XPS and SEM analysis. Platelet adhesion experiment revealed that poly-MPC modified surface was effective to inhibit platelet adhesion in vitro.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Rong, E-mail: rongchen@mail.hust.edu.cn; Lin, Ji-Long; He, Wen-Jie

2016-09-15

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra ofmore » nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.« less

Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO{sub 2} using “water-free” metal-halide/metal alkoxide reactants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanasov, Sarah E.; Kalanyan, Berç; Parsons, Gregory N., E-mail: gnp@ncsu.edu

2016-01-15

Titanium dioxide atomic layer deposition (ALD) is shown to proceed selectively on oxidized surfaces with minimal deposition on hydrogen-terminated silicon using titanium tetrachloride (TiCl{sub 4}) and titanium tetra-isopropoxide [Ti(OCH(CH{sub 3}){sub 2}){sub 4}, TTIP] precursors. Ex situ x-ray photoelectron spectroscopy shows a more rapid ALD nucleation rate on both Si–OH and Si–H surfaces when water is the oxygen source. Eliminating water delays the oxidation of the hydrogen-terminated silicon, thereby impeding TiO{sub 2} film growth. For deposition at 170 °C, the authors achieve ∼2 nm of TiO{sub 2} on SiO{sub 2} before substantial growth takes place on Si–H. On both Si–H and Si–OH, themore » surface reactions proceed during the first few TiCl{sub 4}/TTIP ALD exposure steps where the resulting products act to impede subsequent growth, especially on Si–H surfaces. Insight from this work helps expand understanding of “inherent” substrate selective ALD, where native differences in substrate surface reaction chemistry are used to promote desired selective-area growth.« less

Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

De Silva, Anuja; Seshadri, Indira; Chung, Kisup; Arceo, Abraham; Meli, Luciana; Mendoza, Brock; Sulehria, Yasir; Yao, Yiping; Sunder, Madhana; Truong, Hoa; Matham, Shravan; Bao, Ruqiang; Wu, Heng; Felix, Nelson M.; Kanakasabapathy, Sivananda

2017-04-01

With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

Mechanical intermixing of components in (CoMoNi)-based systems and the formation of (CoMoNi)/WC nanocomposite layers on Ti sheets under ball collisions

NASA Astrophysics Data System (ADS)

Romankov, S.; Park, Y. C.; Shchetinin, I. V.

2017-11-01

Cobalt (Co), molybdenum (Mo), and nickel (Ni) components were simultaneously introduced onto titanium (Ti) surfaces from a composed target using ball collisions. Tungsten carbide (WC) balls were selected for processing as the source of a cemented carbide reinforcement phase. During processing, ball collisions continuously introduced components from the target and the grinding media onto the Ti surface and induced mechanical intermixing of the elements, resulting in formation of a complex nanocomposite structure onto the Ti surface. The as-fabricated microstructure consisted of uniformly dispersed WC particles embedded within an integrated metallic matrix composed of an amorphous phase with nanocrystalline grains. The phase composition of the alloyed layers, atomic reactions, and the matrix grain sizes depended on the combination of components introduced onto the Ti surface during milling. The as-fabricated layer exhibited a very high hardness compared to industrial metallic alloys and tool steel materials. This approach could be used for the manufacture of both cemented carbides and amorphous matrix composite layers.

Layer-by-Layer Molecular Assemblies for Dye-Sensitized Photoelectrosynthesis Cells Prepared by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Degao; Sheridan, Matthew V.; Shan, Bing

2017-08-30

In a Dye Sensitized Photoelectrosynthesis Cell (DSPEC) the relative orientation of catalyst and chromophore play important roles. Here we introduce a new, robust, Atomic Layer Deposition (ALD) procedure for the preparation of assemblies on wide bandgap semiconductors. In the procedure, phosphonated metal complex precursors react with metal ion bridging to an external chromophore or catalyst to give assemblies bridged by Al(III), Sn(IV), Ti(IV), or Zr(IV) metal oxide units as bridges. The procedure has been extended to chromophore-catalyst assemblies for water oxidation catalysis. A SnO2 bridged assembly on SnO2/TiO2 core/shell electrodes undergoes water splitting with an incident photon conversion efficiency (IPCE)more » of 17.1% at 440 nm. Reduction of water at a Ni(II)-based catalyst on NiO films has been shown to give H2. Compared to conventional solution-based procedures, the ALD approach offers significant advantages in scope and flexibility for the preparation of stable surface structures.« less

Process for growing a film epitaxially upon a MgO surface

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1997-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaona, E-mail: lixiaona@dlut.edu.cn; Ding, Jianxin; Wang, Miao

To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu–Ni–M (M = Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M = Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5 μΩ cm for the (Ti{sub 1.5/13.5}Ni{sub 12/13.5}){sub 0.3}Cu{sub 99.7} film and 2.8 μΩ cm for the (Ta{sub 1.1/13.1}Ni{sub 12/13.1}){submore » 0.4}Cu{sub 99.6} film after annealing at 500 °C for 1 h. After annealing at 500 °C for 40 h, the two films remained stable without forming a Cu{sub 3}Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M–Ni is more negative than that of M–Cu.« less

The influence of anatase-rutile mixed phase and ZnO blocking layer on dye-sensitized solar cells based on TiO2nanofiberphotoanodes

PubMed Central

2013-01-01

High performance is expected in dye-sensitized solar cells (DSSCs) that utilize one-dimensional (1-D) TiO2 nanostructures owing to the effective electron transport. However, due to the low dye adsorption, mainly because of their smooth surfaces, 1-D TiO2 DSSCs show relatively lower efficiencies than nanoparticle-based ones. Herein, we demonstrate a very simple approach using thick TiO2 electrospun nanofiber films as photoanodes to obtain high conversion efficiency. To improve the performance of the DSCCs, anatase-rutile mixed-phase TiO2 nanofibers are achieved by increasing sintering temperature above 500°C, and very thin ZnO films are deposited by atomic layer deposition (ALD) method as blocking layers. With approximately 40-μm-thick mixed-phase (approximately 15.6 wt.% rutile) TiO2 nanofiber as photoanode and 15-nm-thick compact ZnO film as a blocking layer in DSSC, the photoelectric conversion efficiency and short-circuit current are measured as 8.01% and 17.3 mA cm−2, respectively. Intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy measurements reveal that extremely large electron diffusion length is the key point to support the usage of thick TiO2 nanofibers as photoanodes with very thin ZnO blocking layers to obtain high photocurrents and high conversion efficiencies. PMID:23286741

Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

PubMed

Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

2017-12-01

In this paper, N-doped TiO 2 (N-TiO 2 ) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO 2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO 2 . To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO 2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO 2 than un-doped TiO 2 . The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO 2 than to un-doped TiO 2 . Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO 2 than that on un-doped TiO 2 .

3D FTO/FTO-Nanocrystal/TiO2 Composite Inverse Opal Photoanode for Efficient Photoelectrochemical Water Splitting.

PubMed

Wang, Zhiwei; Li, Xianglin; Ling, Han; Tan, Chiew Kei; Yeo, Loo Pin; Grimsdale, Andrew Clive; Tok, Alfred Iing Yoong

2018-05-01

A 3D fluorine-doped SnO 2 (FTO)/FTO-nanocrystal (NC)/TiO 2 inverse opal (IO) structure is designed and fabricated as a new "host and guest" type of composite photoanode for efficient photoelectrochemical (PEC) water splitting. In this novel photoanode design, the highly conductive and porous FTO/FTO-NC IO acts as the "host" skeleton, which provides direct pathways for faster electron transport, while the conformally coated TiO 2 layer acts as the "guest" absorber layer. The unique composite IO structure is fabricated through self-assembly of colloidal spheres template, a hydrothermal method and atomic layer deposition (ALD). Owing to its large surface area and efficient charge collection, the FTO/FTO-NC/TiO 2 composite IO photoanode shows excellent photocatalytic properties for PEC water splitting. With optimized dimensions of the SnO 2 nanocrystals and the thickness of the ALD TiO 2 absorber layers, the 3D FTO/FTO-NC/TiO 2 composite IO photoanode yields a photocurrent density of 1.0 mA cm -2 at 1.23 V versus reversible hydrogen electrode (RHE) under AM 1.5 illumination, which is four times higher than that of the FTO/TiO 2 IO reference photoanode. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photosensitivity enhancement with TiO2 in semitransparent light-sensitive skins of nanocrystal monolayers.

PubMed

Akhavan, Shahab; Yeltik, Aydan; Demir, Hilmi Volkan

2014-06-25

We propose and demonstrate light-sensitive nanocrystal skins that exhibit broadband sensitivity enhancement based on electron transfer to a thin TiO2 film grown by atomic layer deposition. In these photosensors, which operate with no external bias, photogenerated electrons remain trapped inside the nanocrystals. These electrons generally recombine with the photogenerated holes that accumulate at the top interfacing contact, which leads to lower photovoltage buildup. Because favorable conduction band offset aids in transferring photoelectrons from CdTe nanocrystals to the TiO2 layer, which decreases the exciton recombination probability, TiO2 has been utilized as the electron-accepting material in these light-sensitive nanocrystal skins. A controlled interface thickness between the TiO2 layer and the monolayer of CdTe nanocrystals enables a photovoltage buildup enhancement in the proposed nanostructure platform. With TiO2 serving as the electron acceptor, we observed broadband sensitivity improvement across 350-475 nm, with an approximately 22% enhancement. Furthermore, time-resolved fluorescence measurements verified the electron transfer from the CdTe nanocrystals to the TiO2 layer in light-sensitive skins. These results could pave the way for engineering nanocrystal-based light-sensing platforms, such as smart transparent windows, light-sensitive walls, and large-area optical detection systems.

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

PubMed

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

Ruddlesden-Popper interface in correlated manganite heterostructures induces magnetic decoupling and dead layer reduction

NASA Astrophysics Data System (ADS)

Belenchuk, A.; Shapoval, O.; Roddatis, V.; Bruchmann-Bamberg, V.; Samwer, K.; Moshnyaga, V.

2016-12-01

We report on the interface engineering in correlated manganite heterostructures by octahedral decoupling using embedded stacks of atomic layers that form the Ruddlesden-Popper structure. A room temperature magnetic decoupling was achieved through deposition of a (SrO)2-TiO2-(SrO)2 sequence of atomic layers at the interface between La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.9Ru0.1O3 films. Moreover, the narrowing of the interfacial dead layer in ultrathin La0.7Sr0.3MnO3 films was demonstrated by insertion of a single (SrO)2 rock-salt layer at the interface with the SrTiO3(100) substrate. The obtained results are discussed based on the symmetry breaking and disconnection of the MnO6 octahedra network at the interface that may lead to the improved performance of all-oxide magnetic tunnel junctions. We suggest that octahedral decoupling realized by formation of Ruddlesden-Popper interfaces is an effective structural mechanism to control functionalities of correlated perovskite heterostructures.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

PubMed

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Atomic Layer Deposition for Coating of High Aspect Ratio TiO2 Nanotube Layers

PubMed Central

2016-01-01

We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO2 nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e., 0.5, 2, 5, and 10 s) of the trimethylaluminum (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 s), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution toward the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3). PMID:27643411

Phase inversion and frequency doubling of reflection high-energy electron diffraction intensity oscillations in the layer-by-layer growth of complex oxides

NASA Astrophysics Data System (ADS)

Mao, Zhangwen; Guo, Wei; Ji, Dianxiang; Zhang, Tianwei; Gu, Chenyi; Tang, Chao; Gu, Zhengbin; Nie*, Yuefeng; Pan, Xiaoqing

In situ reflection high-energy electron diffraction (RHEED) and its intensity oscillations are extremely important for the growth of epitaxial thin films with atomic precision. The RHEED intensity oscillations of complex oxides are, however, rather complicated and a general model is still lacking. Here, we report the unusual phase inversion and frequency doubling of RHEED intensity oscillations observed in the layer-by-layer growth of SrTiO3 using oxide molecular beam epitaxy. In contacts to the common understanding that the maximum(minimum) intensity occurs at SrO(TiO2) termination, respectively, we found that both maximum or minimum intensities can occur at SrO, TiO2, or even incomplete terminations depending on the incident angle of the electron beam, which raises a fundamental question if one can rely on the RHEED intensity oscillations to precisely control the growth of thin films. A general model including surface roughness and termination dependent mean inner potential qualitatively explains the observed phenomena, and provides the answer to the question how to prepare atomically and chemically precise surface/interfaces using RHEED oscillations for complex oxides. We thank National Basic Research Program of China (No. 11574135, 2015CB654901) and the National Thousand-Young-Talents Program.

SnO2@TiO2 double-shell nanotubes for a lithium ion battery anode with excellent high rate cyclability.

PubMed

Jeun, Jeong-Hoon; Park, Kyu-Young; Kim, Dai-Hong; Kim, Won-Sik; Kim, Hong-Chan; Lee, Byoung-Sun; Kim, Honggu; Yu, Woong-Ryeol; Kang, Kisuk; Hong, Seong-Hyeon

2013-09-21

SnO2@TiO2 double-shell nanotubes have been facilely synthesized by atomic layer deposition (ALD) using electrospun PAN nanofibers as templates. The double-shell nanotubes exhibited excellent high rate cyclability for lithium ion batteries. The retention of hollow structures during cycling was demonstrated.

Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

NASA Astrophysics Data System (ADS)

Filatova, E. O.; Baraban, A. P.; Konashuk, A. S.; Konyushenko, M. A.; Selivanov, A. A.; Sokolov, A. A.; Schaefers, F.; Drozd, V. E.

2014-11-01

The effect of a transparent conductive oxide (TCO) buffer layer on the insulator matrix and on the resistive switching process in the metal/TiO2/TCO/metal assembly was studied depending on the material of the TCO (ITO-(In2O3)0.9(SnO2)0.1 or SnO2 or ZnO). For the first time electro-physical studies and near edge x-ray absorption fine structure (NEXAFS) studies were carried out jointly and at the same point of the sample, providing direct experimental evidence that the switching process strongly influences the lowest unoccupied bands and the local atomic structure of the TiO2 layers. It was established that a TCO layer in a metal/TiO2/TCO/metal assembly is an additional source of oxygen vacancies for the TiO2 film. The RL (RH) states are achieved presumably with the formation (rupture) of the electrically conductive path of oxygen vacancies. Inserting an Al2O3 thin layer between the TiO2 and TCO layers to some extent restricts the processes of migration of the oxygen ions and vacancies, and does not allow the anti-clockwise bipolar resistive switching in a Au/TiO2/Al2O3/ITO/Au assembly. The greatest value of the ratio RH/RL is observed for the assembly with a SnO2 buffer layer that will provide the maximum set of intermediate states (recording analog data) and increase the density of information recording in this case.

Structure of H2Ti3O7 and its evolution during sodium insertion as anode for Na ion batteries.

PubMed

Eguía-Barrio, Aitor; Castillo-Martínez, Elizabeth; Zarrabeitia, Maider; Muñoz-Márquez, Miguel A; Casas-Cabanas, Montse; Rojo, Teófilo

2015-03-14

H2Ti3O7 was prepared as a single phase material by ionic exchange from Na2Ti3O7. The complete ionic exchange was confirmed by (1)H and (23)Na solid state Nuclear Magnetic Resonance (NMR). The atomic positions of H2Ti3O7 were obtained from the Rietveld refinement of powder X-ray diffraction (PXRD) and neutron diffraction experimental data, the latter collected at two different wavelengths to precisely determine the hydrogen atomic positions in the structure. All H(+) cations are hydrogen bonded to two adjacent [Ti3O7](2-) layers leading to the gliding of the layers and lattice centring with respect to the parent Na2Ti3O7. In contrast with a previous report where protons were located in two different positions of H2Ti3O7, 3 types of proton positions were found. Two of the three types of proton are bonded to the only oxygen linked to a single titanium atom forming an H-O-H angle close to that of the water molecule. H2Ti3O7 is able to electrochemically insert Na(+). The electrochemical insertion of sodium into H2Ti3O7 starts with a solid solution regime of the C-centred phase. Then, between 0.6 and 1.2 inserted Na(+) the reaction proceeds through a two phase reaction and a plateau at 1.3 V vs. Na(+)/Na is observed in the voltage-composition curve. The second phase resembles the primitive Na2Ti3O7 cell as detected by in situ PXRD. Upon oxidation, from 0.9 to 2.2 V, the PXRD pattern remains mostly unchanged probably due to H(+) removal instead of Na(+), with the capacity quickly fading upon cycling. Conditioning H2Ti3O7 for two cycles at 0.9-2.2 V before cycling in the 0.05-1.6 V range yields similar specific capacity and better retention than the original Na2Ti3O7 in the same voltage range.

Growth and Electronic Structure Characterization of (SrCoOx)n :(SrTiO3)1 Superlattices

NASA Astrophysics Data System (ADS)

Cook, Say Young; Andersen, Tassie; Rosenberg, Richard; Hong, Hawoong; Marks, Laurence; Fong, Dillon

We report on the synthesis of a (SrCoOx)1 :(SrTiO3)1 superlattice by oxide molecular beam epitaxy and the characterization of its electronic structure by soft x-ray spectroscopy. X-ray photoelectron and absorption spectroscopy reveal that Ti remains octahedrally coordinated with a 4 + oxidation state, while the Co oxidation state is intermediate of 3 + and 4 +. Despite having the same half an oxygen vacancy per Co atom found in brownmillerite SrCoO2.5, which consists of alternating tetrahedral and octahedral layers of Co, the confinement of oxygen vacancies to isolated single atomic layers of SrCoOx stabilizes square pyramidal coordination of Co, as observed by the linear dichroism in the Co 2p-3d x-ray absorption. The corresponding stabilization of Co4+ along with Co3 + within the square pyramidal SrCoO2.5 layers gives rise to a Fermi-edge step observed at strong Co 2p-3d resonance in the resonant photoemission spectroscopy of the valence band, and reveals a band gap of 1.7 eV. Comparisons with a Sr(Co,Ti)Ox alloy and a (SrCoOx)2 :(SrTiO3)1 superlattice also will also be presented. The obtained results demonstrate artificial superlattices as effective means to defect engineer complex oxides by harnessing the confinement of oxygen vacancies to control the oxygen coordination environment of the transition metal.

Conversion treatment of thin titanium layer deposited on carbon steel

NASA Astrophysics Data System (ADS)

Benarioua, Younes; Wendler, Bogdan; Chicot, Didier

2018-05-01

The present study has been conducted in order to obtain titanium carbide layer using a conversion treatment consisting of two main steps. In the first step a thin pure titanium layer was deposited on 120C4 carbon steel by PVD. In the second step, the carbon atoms from the substrate diffuse to the titanium coating due to a vacuum annealing treatment and the Ti coating transforms into titanium carbide. Depending on the annealing temperature a partial or complete conversion into TiC is obtained. The hardness of the layer can be expected to differ depending on the processing temperatures. By a systematic study of the hardness as a function of the applied load, we confirm the process of growth of the layer.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides.

PubMed

Jood, Priyanka; Ohta, Michihiro

2015-03-16

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS₂-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS₂ sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

PubMed Central

Jood, Priyanka; Ohta, Michihiro

2015-01-01

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor. PMID:28787992

Tunable Orbital-Selective Magnetic Interaction in Tricolor Oxide Interfaces

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Kareev, Michael; Liu, Xiaoran; Choudhury, Debraj; Middey, Srimanta; Meyers, Derek; Chakhalian, Jak

2015-03-01

Recently, several theoretical scenarios of orbital-selective magnetic interactions were proposed to understand the emergence of the unexpected interfacial magnetism in the archetypical SrTiO3-based two-dimensional electron gas systems, the origin of which is still intriguing and not an entirely understood phenomenon in oxide interface physics. Experimentally, however, there thus far lacks a material system to directly demonstrate the magnetic interaction with orbital-selection (dxy vs. dxz/dyz) and eventually manipulate this magnetic interaction. To address this, here we induced 2DEG and localized magnetism into the same SrTiO3 layer by devising the heterostructure LaTiO3/SrTiO3/YTiO3. Combined electrical transport and atomic-resolved scanning transmission electron microscope with electron energy loss spectroscopy revealed that the magnetic localized electrons are formed by the spin transfer from the YTiO3 layer into 2DEG formed at the LaTiO3 /SrTiO3 interface, with the orbital occupancy and strength of the magnetic interaction controlled by the SrTiO3 layer thickness. Our work provides an ideal platform to explore the orbital physics driven by the interfacial magnetism with prospects for exciting spintronic applications.

Theoretical study of the noble metals on semiconductor surfaces and Ti-base shape memory alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Yungui

1994-07-27

The electronic and structural properties of the (√3 x√3) R30° Ag/Si(111) and (√3 x √3) R30° Au/Si(111) surfaces are investigated using first principles total energy calculations. We have tested almost all experimentally proposed structural models for both surfaces and found the energetically most favorable model for each of them. The lowest energy model structure of the (√3 x √3) R30° Ag/Si(111) surface consists of a top layer of Ag atoms arranged as ``honeycomb-chained-trimers`` lying above a distorted ``missing top layer`` Si(111) substrate. The coverage of Ag is 1 monolayer (ML). We find that the honeycomb structure observed in STM imagesmore » arise from the electronic charge densities of an empty surface band near the Fermi level. The electronic density of states of this model gives a ``pseudo-gap`` around the Fermi level, which is consistent with experimental results. The lowest energy model for the (√3 x √3) R30° Au/Si(111) surface is a conjugate honeycomb-chained-trimer (CHCT-1) configuration which consists of a top layer of trimers formed by 1 ML Au atoms lying above a ``missing top layer`` Si(111) substrate with a honeycomb-chained-trimer structure for its first layer. The structures of Au and Ag are in fact quite similar and belong to the same class of structural models. However, small variation in the structural details gives rise to quite different observed STM images, as revealed in the theoretical calculations. The electronic charge density from bands around the Fermi level for the (√3 x √3) R30°, Au/Si(111) surface also gives a good description of the images observed in STM experiments. First principles calculations are performed to study the electronic and structural properties of a series of Ti-base binary alloys TiFe, TiNi, TiPd, TiMo, and TiAu in the B2 structure.« less

Multilayer moisture barrier

DOEpatents

Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

2015-04-21

A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

Process for growing a film epitaxially upon a MGO surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Iron(III)-oxo centers on TiO{sub 2} for visible light photocatalysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libera, J. A.; Elam, J. W.; Sather, N. F.

Isolated iron(III)-oxo clusters were synthesized onto TiO{sub 2} using atomic layer deposition. The Fe{sub x}O{sub y}/TiO{sub 2} nanocomposites have unique properties that enable not only absorption of visible light, but efficient photocatalysis as demonstrated by methylene blue degradation. The localization of photogenerated electrons in core TiO{sub 2} nanocrystallites upon visible light excitation demonstrates coupling of conduction bands of mixed oxides. The redox properties of photogenerated charges in nanocomposites were studied using in situ electron paramagnetic resonance spectroscopy.

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Mechanical writing of n-type conductive layers on the SrTiO3 surface in nanoscale

PubMed Central

Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Li, Geng; Xie, Guanlin; Lai, Xubo; Ni, Jun; Zhang, Liuwan

2015-01-01

The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interactions of atomic force microscopy tip without applying external electric field. The conductivity of the layer is n-type, oxygen sensitive, and can be effectively tuned by the gate voltage. Hence, our findings have potential applications in oxide nano-circuits and oxygen sensors. PMID:26042679

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim

2016-07-25

The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried outmore » over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.« less

Atomic and electronic structures of single-layer FeSe on SrTiO 3(001): The role of oxygen deficiency

DOE PAGES

Bang, Junhyeok; Li, Zhi; Sun, Y. Y.; ...

2013-06-06

Using first-principles calculation, we propose an interface structure for single triple-layer FeSe on the SrTiO 3(001) surface, a high-T c superconductor found recently. The key component of this structure is the oxygen deficiency on the top layer of the SrTiO 3 substrate, as a result of Se etching used in preparing the high-T c samples. The O vacancies strongly bind the FeSe triple layer to the substrate giving rise to a (2×1) reconstruction, as observed by scanning tunneling microscopy. The enhanced binding correlates to the significant increase of T c observed in experiment. The O vacancies also serve as themore » source of electron doping, which modifies the Fermi surface of the first FeSe layer by filling the hole pocket near the center of the surface Brillouin zone, as suggested from angle-resolved photoemission spectroscopy measurement.« less

Laminated and Two-Dimensional Carbon-Supported Microwave Absorbers Derived from MXenes.

PubMed

Han, Meikang; Yin, Xiaowei; Li, Xinliang; Anasori, Babak; Zhang, Litong; Cheng, Laifei; Gogotsi, Yury

2017-06-14

Microwave absorbers with layered structures that can provide abundant interfaces are highly desirable for enhancing electromagnetic absorbing capability and decreasing the thickness. The atomically thin layers of two-dimensional (2D) transition-metal carbides (MXenes) make them a convenient precursor for synthesis of other 2D and layered structures. Here, laminated carbon/TiO 2 hybrid materials composed of well-aligned 2D carbon sheets with embedded TiO 2 nanoparticles were synthesized and showed excellent microwave absorption. Disordered 2D carbon layers with an unusual structure were obtained by annealing multilayer Ti 3 C 2 MXene in a CO 2 atmosphere. The minimum reflection coefficient of laminated carbon/TiO 2 composites reaches -36 dB, and the effective absorption bandwidth ranges from 3.6 to 18 GHz with the tunable thickness from 1.7 to 5 mm. The effective absorption bandwidth covers the whole Ku band (12.4-18 GHz) when the thickness of carbon/TiO 2 /paraffin composite is 1.7 mm. This study is expected to pave the way to the synthesis of carbon-supported absorbing materials using a large family of 2D carbides.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles.

PubMed

Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Bogusz, Agnieszka; Du, Nan; Li, Yanrong; Schmidt, Heidemarie

2016-12-07

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiO x F y /Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiO x F y layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag + which reacted with the adsorbed F - in the TiO x F y layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.

Reduced thermal conductivity by nanoscale intergrowths in perovskite like layered structure La{sub 2}Ti{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaliq, Jibran; Chen, Kan; Li, Chunchun

2015-02-21

The effect of substitution and oxidation-reduction on the thermal conductivity of perovskite-like layered structure (PLS) ceramics was investigated in relation to mass contrast and non-stoichiometry. Sr (acceptor) was substituted on the A site, while Ta (donor) was substituted on the B site of La{sub 2}Ti{sub 2}O{sub 7}. Substitution in PLS materials creates atomic scale disorders to accommodate the non-stoichiometry. High resolution transmission electron microscopy and X ray diffraction revealed that acceptor substitution in La{sub 2}Ti{sub 2}O{sub 7} produced nanoscale intergrowths of n = 5 layered phase, while donor substitution produced nanoscale intergrowths of n = 3 layered phase. As a result of these nanoscalemore » intergrowths, the thermal conductivity value reduced by as much as ∼20%. Pure La{sub 2}Ti{sub 2}O{sub 7} has a thermal conductivity value of ∼1.3 W/m K which dropped to a value of ∼1.12 W/m K for Sr doped La{sub 2}Ti{sub 2}O{sub 7} and ∼0.93 W/m K for Ta doped La{sub 2}Ti{sub 2}O{sub 7} at 573 K.« less

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

2016-07-01

The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Selective isolation of the electron or hole in photocatalysis: ZnO-TiO2 and TiO2-ZnO core-shell structured heterojunction nanofibers via electrospinning and atomic layer deposition.

PubMed

Kayaci, Fatma; Vempati, Sesha; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi; Uyar, Tamer

2014-06-07

Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated charge carrier is more efficient in the process of catalysis and the associated mechanism. To address this issue we have fabricated core-shell heterojunction (CSHJ) nanofibers from ZnO and TiO2 in two combinations where only the 'shell' part of the heterojunction is exposed to the environment to participate in the photocatalysis. Core and shell structures were fabricated via electrospinning and atomic layer deposition, respectively which were then subjected to calcination. These CSHJs were characterized and studied for photocatalytic activity (PCA). These two combinations expose electrons or holes selectively to the environment. Under suitable illumination of the ZnO-TiO2 CSHJ, e/h pairs are created mainly in TiO2 and the electrons take part in catalysis (i.e. reduce the organic dye) at the conduction band or oxygen vacancy sites of the 'shell', while holes migrate to the core of the structure. Conversely, holes take part in catalysis and electrons diffuse to the core in the case of a TiO2-ZnO CSHJ. The results further revealed that the TiO2-ZnO CSHJ shows ∼1.6 times faster PCA when compared to the ZnO-TiO2 CSHJ because of efficient hole capture by oxygen vacancies, and the lower mobility of holes.

Microstructure Evolution of TiC Particles In Situ, Synthesized by Laser Cladding

PubMed Central

Liu, Yanhui; Ding, Jieqiong; Qu, Weicheng; Su, Yu; Yu, Zhishui

2017-01-01

In this paper, a TiC reinforcement metal matrix composite coating is produced using nickel and graphite mixing powder on the surface ofTi-6Al-4V alloy by laser radiation. The microstructure of the coatings is investigated by XRD, SEM and EDS. Results show that most of the TiC phase is granular, with a size of several micrometers, and a few of the TiC phases are petals or flakes. At the cross-section of the coatings, a few special TiC patterns are found and these TiC patterns do not always occur at the observed cross-section. The even distribution of the TiC phase in the coatings confirms that the convection of the laser-melted pool leads to the homogenization of titanium atoms from the molten substrate, and carbon atoms from the preplace powder layer, by the mass transfer. The characteristics of the TiC pattern confirm that the morphology and distribution of the primary TiC phase could be influenced by convection. Two main reasons for this are that the density of the TiC phase is lower than the liquid melt, and that the primary TiC phase precipitates from the pool with a high convection speed at high temperature. PMID:28772641

Microstructure Evolution of TiC Particles In Situ, Synthesized by Laser Cladding.

PubMed

Liu, Yanhui; Ding, Jieqiong; Qu, Weicheng; Su, Yu; Yu, Zhishui

2017-03-11

In this paper, a TiC reinforcement metal matrix composite coating is produced using nickel and graphite mixing powder on the surface ofTi-6Al-4V alloy by laser radiation. The microstructure of the coatings is investigated by XRD, SEM and EDS. Results show that most of the TiC phase is granular, with a size of several micrometers, and a few of the TiC phases are petals or flakes. At the cross-section of the coatings, a few special TiC patterns are found and these TiC patterns do not always occur at the observed cross-section. The even distribution of the TiC phase in the coatings confirms that the convection of the laser-melted pool leads to the homogenization of titanium atoms from the molten substrate, and carbon atoms from the preplace powder layer, by the mass transfer. The characteristics of the TiC pattern confirm that the morphology and distribution of the primary TiC phase could be influenced by convection. Two main reasons for this are that the density of the TiC phase is lower than the liquid melt, and that the primary TiC phase precipitates from the pool with a high convection speed at high temperature.

Optical Properties and Microstructure of Barium Titanate Thin Film (BaTiO3) for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Setyadi, A. U. L. S.; Iriani, Y.; Nurosyid, F.

2018-03-01

Barium Titanate thin films were prepared with variations in the number of layers and variation of the solution on a Quartz substrate using the sol-gel method with spin coating technique, at rotation speed 3000 rpm for 30 seconds. The first solution was made with heated and the second with stirred and heated. In this experiment, BaTiO3 were heated at 900°C for 2 hours. The characterization of optical properties was performed by UV-Vis spectrometer and microstructural characterization was performed by X-Ray Diffraction (XRD). Variation of layers number affects the intensity of the diffraction peaks. The more layers of the intensity are also greater. The variation of solution making process affects the intensity of diffraction peak. The process of making the solution with stirred and heated has greater intensity than the process of solution by simply heating it. When stirred at the same time heated to produce atoms diffuses more easily with other atoms so the bonds between atoms are more orderly and strong. The process of making the solution in the heated is larger in the crystallite size of than preparation of solution by stirred and heated. The stirred which the solution is produced influences the appearance of the size of the crystal. Variation number of layers influences the absorbance value of layer. The absorbance increases with increasing number of layers. The absorbance of the sample was made with heated the higher than with stirred and heated.

Atomic Layer Deposition of Metal Oxides on sp2-Graphitic Carbon Substrates

DTIC Science & Technology

2014-03-31

supercapacitors . The research explored the ALD nucleation procedure based on NO2 and TMA. Al2O3 ALD films resulting from the nucleation procedure were...TiO2 and ZnO were used for electrodes for Li ion batteries and pseudocapacitance supercapacitors . 15. SUBJECT TERMS F-16 Aircraft, High Power...sp2 Graphitic Carbon Substrates 11 4.4.1 TiO2 ALD as Anode Material for Li Ion Batteries 11 4.4.2 TiO2 ALD for Pseudocapacitance Supercapacitors

Photocatalytic thin films containing TiO2:N nanopowders obtained by the layer-by-layer self-assembling method

NASA Astrophysics Data System (ADS)

Rojas-Blanco, L.; Urzúa, M. D.; Ramírez-Bon, R.; Espinoza Beltrán, F. J.

2012-01-01

In this work, TiO2-N powders were synthesized by high-energy ball milling, using commercial titanium dioxide (TiO2) in the anatase phase and urea to introduce nitrogen into TiO2 in order to enhance their photocatalytic properties in the visible spectral region. Several samples were prepared by milling a mixture of TiO2-urea during 2, 4, 8, 12 and 24 h and characterized by spectroscopic and analytical techniques. X-ray diffraction (XRD) results showed the coexistence of anatase and high-pressure srilankite TiO2 crystalline phases in the samples. Scanning electron microscopy (SEM) revealed that the grain size of the powder samples decreases to 200 nm at 24 h milling time. UV-Vis diffuse reflectance spectroscopic data showed a clear red-shift in the onset of light absorption from 387 to 469 nm as consequence of nitrogen doping in the samples. The photocatalytic activity of the TiO2-N samples was evaluated by methylene blue degradation under visible light irradiation. It was found that TiO2-N samples had higher photocatalytic activity than undoped TiO2 samples, which could be assigned to the effect of introducing N atoms and XPS results confirm it. Using polyethylenimine (PEI), transparent thin films of TiO2-N nanoparticles were prepared by layer-by-layer self assembly method. UV-visible spectrophotometry was employed in a quantitative manner to monitor the adsorbed mass of TiO2 and PEI after each dip cycle. The adsorption of both TiO2 and PEI showed a saturation dip time of 15 min.

Thermal MEMS actuator operation in aqueous media/seawater: Performance enhancement through atomic layer deposition post processing of PolyMUMPs devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warnat, Stephan, E-mail: stephan.warnat@dal.ca; Forbrigger, Cameron; Hubbard, Ted

A method to enhance thermal microelectromechanical systems (MEMS) actuators in aqueous media by using dielectric encapsulation layers is presented. Aqueous media reduces the available mechanical energy of the thermal actuator through an electrical short between actuator structures. Al{sub 2}O{sub 3} and TiO{sub 2} laminates with various thicknesses were deposited on packaged PolyMUMPs devices to electrically separate the actuator from the aqueous media. Atomic layer deposition was used to form an encapsulation layer around released MEMS structures and the package. The enhancement was assessed by the increase of the elastic energy, which is proportional to the mechanical stiffness of the actuatormore » and the displacement squared. The mechanical stiffness of the encapsulated actuators compared with the noncoated actuators was increased by factors ranging from 1.45 (for 45 nm Al{sub 2}O{sub 3} + 20 nm TiO{sub 2}) to 1.87 (for 90 nm Al{sub 2}O{sub 3} + 40 nm TiO{sub 2}). Displacement measurements were made for all laminate combinations in filtered tap water and seawater by using FFT based displacement measurement technique with a repeatability of ∼10 nm. For all laminate structures, the elastic energy increased and enhanced the actuator performance: In seawater, the mechanical output energy increased by factors ranging from 5 (for 90 nm Al{sub 2}O{sub 3}) to 11 (for 90 nm Al{sub 2}O{sub 3} + 40 nm TiO{sub 2}). The authors also measured the long-term actuator stability/reliability in seawater. Samples were stored for 29 days in seawater and tested for 17 days in seawater. Laminates with TiO{sub 2} layers allowed constant operation over the entire measurement period.« less

Rutile IrO2/TiO2 superlattices: A hyperconnected analog to the Ruddelsden-Popper structure

NASA Astrophysics Data System (ADS)

Kawasaki, Jason K.; Baek, David; Paik, Hanjong; Nair, Hari P.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

2018-05-01

Dimensionality and connectivity among octahedra play important roles in determining the properties, electronic structure, and phase transitions of transition-metal oxides. Here we demonstrate the epitaxial growth of (110)-oriented alternating layers of IrO2 and TiO2, both of which have the rutile structure. These (IrO2)n/(TiO2)2 superlattices consist of IrO6 and TiO6 octahedra tiled in a hyperconnected, edge- and corner-sharing network. Despite the large lattice mismatch between constituent layers (Δ d∥=-2.1 % and Δ c =+6.6 % ), our reactive molecular-beam epitaxy-grown superlattices show high structural quality as determined by x-ray diffraction and sharp interfaces as observed by transmission electron microscopy. The large strain at the interface is accommodated by an ordered interfacial reconstruction. The superlattices show persistent metallicity down to n =3 atomic layers, and angle-resolved photoemission spectroscopy measurements reveal quantized sub-bands with signatures of IrO2-IrO2 interlayer coupling.

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porro, Samuele, E-mail: samuele.porro@polito.it; Conti, Daniele; Guastella, Salvatore

2016-01-15

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such asmore » self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.« less

Three-dimensional SnO2@TiO2 double-shell nanotubes on carbon cloth as a flexible anode for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, Haifeng; Ren, Weina; Cheng, Chuanwei

2015-07-01

In this study, three-dimensional SnO2@TiO2 double-shell nanotubes on carbon cloth are synthesized by a combination of the hydrothermal method for ZnO nanorods and a subsequent SnO2 and TiO2 thin film coating with atomic layer deposition (ALD). The as-prepared SnO2@TiO2 double-shell nanotubes are further tested as a flexible anode for Li ion batteries. The SnO2@TiO2 double-shell nanotubes/carbon cloth electrode exhibited a high initial discharge capacity (e.g. 778.8 mA h g-1 at a high current density of 780 mA g-1) and good cycling performance, which could be attributed to the 3D double-layer nanotube structure. The interior space of the stable TiO2 hollow tube can accommodate the large internal stress caused by volume expansion of SnO2 and protect SnO2 from pulverization and exfoliation.

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

NASA Astrophysics Data System (ADS)

Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

2018-02-01

Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Li; Thompson, Gregory, E-mail: gthompson@eng.ua.edu

A series of 40–2 nm bilayer spacing Ti/Fe multilayers were sputter-deposited. As the length scale of individual Ti layers equaled to 2 nm, Ti phase transforms from a hexagonal close packed (hcp)-to-body centered cubic (bcc) crystal structures for equal layer thicknesses in Ti/Fe multilayers. Further equal reductions in bilayer spacing to less than 1 nm resulted in an additional transformation from a crystalline to amorphous structure. Atom probe tomography reveals significant intermixing between layers which contributes to the observed phase transformations. Real-time, intrinsic growth stress measurements were also performed to relate the adatom mobility to these phase transformations. For the hcp Ti/bcc Femore » multilayers of equivalent volume fractions, the multilayers undergo an overall tensile stress state to a compressive stress state with decreasing bilayer thickness for the multilayers. When the above phase transformations occurred, a modest reduction in the overall compressive stress of the multilayer was noted. Depending on the Fe thickness, the Ti growth was observed to be a tensile to compressive growth change to a purely compressive growth for thinner bilayer spacing. Fe retained a tensile growth stress regardless of the bilayer spacing studied.« less

Engendering Long-Term Air and Light Stability of a TiO2-Supported Porphyrinic Dye via Atomic Layer Deposition.

PubMed

Hoffeditz, William L; Son, Ho-Jin; Pellin, Michael J; Farha, Omar K; Hupp, Joseph T

2016-12-21

Organic and porphyrin-based chromophores are prevalent in liquid-junction photovoltaic and photocatalytic solar-cell chemistry; however, their long-term air and light instability may limit their practicality in real world technologies. Here, we describe the protection of a zinc porphyrin dye, adsorbed on nanoparticulate TiO 2 , from air and light degradation by a protective coating of alumina grown with a previously developed post-treatment atomic layer deposition (ALD) technique. The protective Al 2 O 3 ALD layer is deposited using dimethylaluminum isopropoxide as an Al source; in contrast to the ubiquitous ALD precursor trimethylaluminum, dimethylaluminum isopropoxide does not degrade the zinc porphyrin dye, as confirmed by UV-vis measurements. The growth of this protective ALD layer around the dye can be monitored by an in-reactor quartz crystal microbalance (QCM). Furthermore, greater than 80% of porphyrin light absorption is retained over ∼1 month of exposure to air and light when the protective coating is present, whereas almost complete loss of porphyrin absorption is observed in less than 2 days in the absence of the ALD protective layer. Applying the Al 2 O 3 post-treatment technique to the TiO 2 -adsorbed dye allows the dye to remain in electronic contact with both the semiconductor surface and a surrounding electrolyte solution, the combination of which makes this technique promising for numerous other electrochemical photovoltaic and photocatalytic applications, especially those involving the dye-sensitized evolution of oxygen.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: girs@ispms.tsc.ru; Meisner, L. L., E-mail: lm@ispms.tsc.ru

The effect of the Ta-ion beam implantation on the micro- and nanostructures of the surface layers of NiTi alloy was investigated using transmission electron microscopy and Auger spectroscopy. It is found that the elements are distributed non-uniformly with depth, so that the sublayers differ significantly in structure. The modified surface layer was found to consist of two sublayers, i.e. the upper oxide layer and the lower-lying amorphous layer that contains a maximum of Ta atoms.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

3D nanostructured N-doped TiO2 photocatalysts with enhanced visible absorption.

PubMed

Cho, Sumin; Ahn, Changui; Park, Junyong; Jeon, Seokwoo

2018-05-24

Considering the environmental issues, it is essential to develop highly efficient and recyclable photocatalysts in purification systems. Conventional TiO2 nanoparticles have strong intrinsic oxidizing power and high surface area, but are difficult to collect after use and rarely absorb visible light, resulting in low photocatalytic efficiency under sunlight. Here we develop a new type of highly efficient and recyclable photocatalyst made of a three-dimensional (3D) nanostructured N-doped TiO2 monolith with enhanced visible light absorption. To prepare the sample, an ultrathin TiN layer (∼10 nm) was conformally coated using atomic layer deposition (ALD) on 3D nanostructured TiO2. Subsequent thermal annealing at low temperature (550 °C) converted TiN to anatase phase N-doped TiO2. The resulting 3D N-doped TiO2 showed ∼33% enhanced photocatalytic performance compared to pure 3D TiO2 of equivalent thickness under sunlight due to the reduced bandgap, from 3.2 eV to 2.75 eV through N-doping. The 3D N-doped TiO2 monolith could be easily collected and reused at least 5 times without any degradation in photocatalytic performance.

Tuning the dead-layer behavior of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} via interfacial engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, R.; Xu, H. C.; Xia, M.

The dead-layer behavior, deterioration of the bulk properties in near-interface layers, restricts the applications of many oxide heterostructures. We present the systematic study of the dead-layer in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} grown by ozone-assisted molecular beam epitaxy. Dead-layer behavior is systematically tuned by varying the interfacial doping, while unchanged with varied doping at any other atomic layers. In situ photoemission and low energy electron diffraction measurements suggest intrinsic oxygen vacancies at the surface of ultra-thin La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, which are more concentrated in thinner films. Our results show correlation between interfacial doping, oxygen vacancies, and the dead-layer, whichmore » can be explained by a simplified electrostatic model.« less

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Application of RF varactor using Ba(x)Sr(1-x)TiO3/TiO2/HR-Si substrate for reconfigurable radio.

PubMed

Kim, Ki-Byoung; Park, Chul-Soon

2007-11-01

In this paper, the potential feasibility of integrating Ba(x)Sr(1-x)TiO3 (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO2 thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO2 as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO2 (50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO2/HR-Si IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz).

A Tandem Catalyst with Multiple Metal Oxide Interfaces Produced by Atomic Layer Deposition.

PubMed

Ge, Huibin; Zhang, Bin; Gu, Xiaomin; Liang, Haojie; Yang, Huimin; Gao, Zhe; Wang, Jianguo; Qin, Yong

2016-06-13

Ideal heterogeneous tandem catalysts necessitate the rational design and integration of collaborative active sites. Herein, we report on the synthesis of a new tandem catalyst with multiple metal-oxide interfaces based on a tube-in-tube nanostructure using template-assisted atomic layer deposition, in which Ni nanoparticles are supported on the outer surface of the inner Al2 O3 nanotube (Ni/Al2 O3 interface) and Pt nanoparticles are attached to the inner surface of the outer TiO2 nanotube (Pt/TiO2 interface). The tandem catalyst shows remarkably high catalytic efficiency in nitrobenzene hydrogenation over Pt/TiO2 interface with hydrogen formed in situ by the decomposition of hydrazine hydrate over Ni/Al2 O3 interface. This can be ascribed to the synergy effect of the two interfaces and the confined nanospace favoring the instant transfer of intermediates. The tube-in-tube tandem catalyst with multiple metal-oxide interfaces represents a new concept for the design of highly efficient and multifunctional nanocatalysts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Baochen, E-mail: liaobaochen@nus.edu.sg; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576; A*STAR Institute of Materials Research and Engineering

2014-06-23

In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is foundmore » to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.« less

Plasma-enhanced atomic layer deposition for plasmonic TiN

NASA Astrophysics Data System (ADS)

Otto, Lauren M.; Hammack, Aaron T.; Aloni, Shaul; Ogletree, D. Frank; Olynick, Deirdre L.; Dhuey, Scott; Stadler, Bethanie J. H.; Schwartzberg, Adam M.

2016-09-01

This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability. Plasmonic alloys and synthetic metals have significantly improved stability, but their growth can require high-temperatures (>400 °C), and it is difficult to control the thickness and directionality of the resulting film, especially on technologically important substrates. Such issues prevent the application of alternative plasmonic materials for both fundamental studies and large-scale industrial applications. Alternatively, PE-ALD allows for conformal deposition on a variety of substrates with consistent material properties. This conformal coating will allow the creation of exotic three-dimensional structures, and low-temperature deposition techniques will provide unrestricted usage across a variety of platforms. The characterization of this new plasmonic material was performed with in-situ spectroscopic ellipsometry as well as Auger electron spectroscopy for analysis of TiN film sensitivity to oxide cross-contamination. Plasmonic TiN films were fabricated, and a chlorine plasma etch was found to pattern two dimensional gratings as a test structure. Optical measurements of 900 nm period gratings showed reasonable agreement with theoretical modeling of the fabricated structures, indicating that ellipsometry models of the TiN were indeed accurate.

Butanol Dehydration over V₂O₅-TiO₂/MCM-41 Catalysts Prepared via Liquid Phase Atomic Layer Deposition.

PubMed

Choi, Hyeonhee; Bae, Jung-Hyun; Kim, Do Heui; Park, Young-Kwon; Jeon, Jong-Ki

2013-04-29

MCM-41 was used as a support and, by using atomic layer deposition (ALD) in the liquid phase, a catalyst was prepared by consecutively loading titanium oxide and vanadium oxide to the support. This research analyzes the effect of the loading amount of vanadium oxide on the acidic characteristics and catalytic performance in the dehydration of butanol. The physical and chemical characteristics of the TiO₂-V₂O₅/MCM-41 catalysts were analyzed using XRF, BET, NH₃-TPD, XRD, Py-IR, and XPS. The dehydration reaction of butanol was performed in a fixed bed reactor. For the samples with vanadium oxide loaded to TiO₂/MCM-41 sample using the liquid phase ALD method, it was possible to increase the loading amount until the amount of vanadium oxide reached 12.1 wt %. It was confirmed that the structural properties of the mesoporous silica were retained well after titanium oxide and vanadium loading. The NH₃-TPD and Py-IR results indicated that weak acid sites were produced over the TiO₂/MCM-41 samples, which is attributed to the generation of Lewis acid sites. The highest activity of the V₂O₅(12.1)-TiO₂/MCM-41 catalyst in 2-butanol dehydration is ascribed to it having the highest number of Lewis acid sites, as well as the highest vanadium dispersion.

Improved osseointegration properties of hierarchical microtopographic/nanotopographic coatings fabricated on titanium implants.

PubMed

Zemtsova, Elena G; Yudintceva, Natalia M; Morozov, Pavel E; Valiev, Ruslan Z; Smirnov, Vladimir M; Shevtsov, Maxim A

2018-01-01

Titanium (Ti) implants are extensively used in reconstructive surgery and orthopedics. However, the intrinsic inertness of untreated Ti implants usually results in insufficient osseointegration. In order to improve the osteoconductivity properties of the implants, they are coated with hierarchical microtopographic/nanotopographic coatings employing the method of molecular layering of atomic layer deposition (ML-ALD). The analysis of the fabricated nanostructured relief employing scanning electron microscopy, atomic force microscopy, and electron spectroscopy for chemical analysis clearly demonstrated the formation of the nanotopographic (<100 nm) and microtopographic (0.1-0.5 μm) titano-organic structures on the surface of the nanograined Ti implants. Subsequent coincubation of the MC3T3-E1 mouse osteoblasts on the microtopographic/nanotopographic surface of the implants resulted in enhanced osteogenic cell differentiation (the production of alkaline phosphatase, osteopontin, and osteocalcin). In vivo assessment of the osseointegrative properties of the microtopographically/nanotopographically coated implants in a model of below-knee amputation in New Zealand rabbits demonstrated enhanced new bone formation in the zone of the bone-implant contact (as measured by X-ray study) and increased osseointegration strength (removal torque measurements). The fabrication of the hierarchical microtopographic/nanotopographic coatings on the nanograined Ti implants significantly improves the osseointegrative properties of the intraosseous Ti implants. This effect could be employed in both translational and clinical studies in orthopedic and reconstructive surgery.

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

NASA Astrophysics Data System (ADS)

Park, Young-Bae; Ruglovsky, Jennifer L.; Atwater, Harry A.

2004-07-01

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H + and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90° a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d33, is estimated from PFM to be 80-100pm/V and the coercive electric field (Ec) is 12-20kV/cm, comparable to those in single crystal BaTiO3.

Affinity of the interface between hydroxyapatite (0001) and titanium (0001) surfaces: a first-principles investigation.

PubMed

Sun, Jin P; Dai, Jianhong; Song, Yan; Wang, You; Yang, Rui

2014-12-10

A basic understanding of the affinity between the hydroxyapatite (HA) and α-Ti surfaces is obtained through electronic structure calculations by first-principles method. The surface energies of HA(0001), HA (011̅0), HA (101̅1), and Ti(0001) surfaces have been calculated. The HA(0001) presents the most thermodynamically stable of HA. The HA/Ti interfaces were constructed by two kinds of interface models, the single interface (denoted as SI) and the double-interface (denoted as DI). Two methods, the full relaxation and the UBER, were applied to determine the interfacial separation and the atomic arrangement in the interfacial zone. The works of adhesion of interfaces with various stoichiometric HA surfaces were evaluated. For the HA(0001)/Ti(0001) interfaces, the work of adhesion is strongly dependent on the chemical environment of the HA surface. The values are -2.33, -1.52, and -0.80 J/m(2) for the none-, single-, and double-Ca terminated HA/Ti interfaces, respectively. The influence of atomic relaxation on the work of adhesion and interface separation is discussed. Full relaxation results include -1.99 J/m(2) work of adhesion and 0.220 nm separation between HA and Ti for the DI of 1-Ca-HA/Ti interface, while they are -1.14 J/m(2) and 0.235 nm by partial relaxation. Analysis of electronic structure reveals that charge transfer between HA and Ti slabs occurs during the formation of the HA/Ti interface. The transfer generates the Ti-O or Ti-Ca bonds across the interface and drives the HA/Ti interface system to metallic characteristic. The energetically favorable interfaces are formed when the outmost layer of HA comprises more O atoms at the interface.

Effect of additional elements on compositional modulated atomic layered structure of hexagonal Co{sub 80}Pt{sub 20} alloy films with superlattice diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hinata, Shintaro; Research Fellowship Division Japan Society for the Promotion of Science; Yamane, Akira

2016-05-15

The effect of additional element on compositionally modulated atomic layered structure of hexagonal Co{sub 80}Pt{sub 20} alloy films with superlattice diffraction was investigated. In this study it is found that the addition of Cr or W element to Co{sub 80}Pt{sub 20} alloy film shows less deterioration of hcp stacking structure and compositionally modulated atomic layer stacking structure as compared to Si or Zr or Ti with K{sub u} of around 1.4 or 1.0 × 10{sup 7} erg/cm{sup 3} at 5 at.% addition. Furthermore, for O{sub 2} addition of O{sub 2} ≥ 5.0 × 10{sup −3} Pa to CoPt alloy, compositionallymore » modulated atomic layer stacking structure will be deteriorated with enhancement of formation of hcp stacking structure which leads higher K{sub u} of 1.0 × 10{sup 7} erg/cm{sup 3}.« less

TiO2 coatings via atomic layer deposition on polyurethane and polydimethylsiloxane substrates: Properties and effects on C. albicans growth and inactivation process

NASA Astrophysics Data System (ADS)

Pessoa, R. S.; dos Santos, V. P.; Cardoso, S. B.; Doria, A. C. O. C.; Figueira, F. R.; Rodrigues, B. V. M.; Testoni, G. E.; Fraga, M. A.; Marciano, F. R.; Lobo, A. O.; Maciel, H. S.

2017-11-01

Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO2) thin films were successful obtained on polyurethane (PU) and polydimethylsiloxane (PDMS) substrates using ALD. The effect of TiO2 films on Candida albicans growth and inactivation process were also systematic discussed. TiCl4 and H2O were used as precursors at 80 °C, while the reaction cycle number ranged from 500 to 2000. Several chemical, physical and physicochemical techniques were used to evaluate the growth kinetics, elemental composition, material structure, chemical bonds, contact angle, work of adhesion and surface morphology of the ALD TiO2 thin films grown on both substrates. For microbiological analyses, yeasts of standard strains of C. albicans were grown on non- and TiO2-coated substrates. Next, the antifungal and photocatalytic activities of the TiO2 were also investigated by counting the colony-forming units (CFU) before and after UV-light treatment. Chlorine-doped amorphous TiO2 films with varied thicknesses and Cl concentration ranging from 2 to 12% were obtained. In sum, the ALD TiO2 films suppressed the yeast-hyphal transition of C. albicans onto PU, however, a high adhesion of yeasts was observed. Conversely, for PDMS substrate, the yeast adhesion did not change, as observed in control. Comparatively to control, the TiO2-covered PDMS had a reduction in CFU up to 59.5% after UV treatment, while no modification was observed to TiO2-covered PU. These results pointed out that ALD chlorine-doped amorphous TiO2 films grown on biomedical polymeric surfaces may act as fungistatic materials. Furthermore, in case of contamination, these materials may also behave as antifungal materials under UV light exposure.

Effect of intermediate layers on atomic layer deposition-aluminum oxide protected silver mirrors

NASA Astrophysics Data System (ADS)

Fryauf, David M.; Diaz Leon, Juan J.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

2017-07-01

This work investigates intermediate materials deposited between silver (Ag) thin-film mirrors and an aluminum oxide (AlOx) barrier overlayer and compares the effects on mirror durability to environmental stresses. Physical vapor deposition of various fluorides, oxides, and nitrides in combination with AlOx by atomic layer deposition (ALD) is used to develop several coating recipes. Ag-AlOx samples with different intermediate materials undergo aggressive high-temperature (80°C), high-humidity (80%) (HTHH) testing for 10 days. Reflectivity of mirror samples is measured before and after HTHH testing, and image processing techniques are used to analyze the specular surface of the samples after HTHH testing. Among the seven intermediate materials used in this work, TiN, MgAl2O4, NiO, and Al2O3 intermediate layers offer more robust protection against chemical corrosion and moisture when compared with samples with no intermediate layer. In addition, results show that the performance of the ALD-AlOx barrier overlayer depends significantly on the ALD-growth process temperature. Because higher durability is observed in samples with less transparent TiN and NiO layers, we propose a figure of merit based on post-HTHH testing reflectivity change and specular reflective mirror surface area remaining after HTHH testing to judge overall barrier performance.

Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel

2015-06-30

Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb) 2Te 3 (CBST) films grown on SrTiO 3 (1 1 1) substrates with and without a Te capping layer. We find that bothmore » the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE PAGES

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

2014-10-15

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Studies of local structural distortions in strained ultrathin BaTiO3 films using scanning transmission electron microscopy.

PubMed

Park, Daesung; Herpers, Anja; Menke, Tobias; Heidelmann, Markus; Houben, Lothar; Dittmann, Regina; Mayer, Joachim

2014-06-01

Ultrathin ferroelectric heterostructures (SrTiO3/BaTiO3/BaRuO3/SrRuO3) were studied by scanning transmission electron microscopy (STEM) in terms of structural distortions and atomic displacements. The TiO2-termination at the top interface of the BaTiO3 layer was changed into a BaO-termination by adding an additional BaRuO3 layer. High-angle annular dark-field (HAADF) imaging by aberration-corrected STEM revealed that an artificially introduced BaO-termination can be achieved by this interface engineering. By using fast sequential imaging and frame-by-frame drift correction, the effect of the specimen drift was significantly reduced and the signal-to-noise ratio of the HAADF images was improved. Thus, a quantitative analysis of the HAADF images was feasible, and an in-plane and out-of-plane lattice spacing of the BaTiO3 layer of 3.90 and 4.22 Å were determined. A 25 pm shift of the Ti columns from the center of the unit cell of BaTiO3 along the c-axis was observed. By spatially resolved electron energy-loss spectroscopy studies, a reduction of the crystal field splitting (CFS, ΔL3=1.93 eV) and an asymmetric broadening of the eg peak were observed in the BaTiO3 film. These results verify the presence of a ferroelectric polarization in the ultrathin BaTiO3 film.

Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

PubMed Central

Guo, Jing; Valdesueiro, David; Yuan, Shaojun; Liang, Bin; van Ommen, J. Ruud

2018-01-01

This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development. PMID:29364840

Development of a versatile procedure for the biofunctionalization of Ti-6Al-4V implants

NASA Astrophysics Data System (ADS)

Rezvanian, Parsa; Arroyo-Hernández, María; Ramos, Milagros; Daza, Rafael; Elices, Manuel; Guinea, Gustavo V.; Pérez-Rigueiro, José

2016-11-01

Titanium (Ti) and titanium alloys are among the most-commonly used metallic materials for implantation in the human body for the purpose of replacing hard tissue. Although Ti and its alloys are widely used for such an aim, in implants of a long duration they exhibit some shortcomings due to the loosening of the very implant. This phenomenon is highly dependent on the interaction between the organic tissues and the surface of the implant. In this study, the authors introduce a surface treatment technique for functionalization of the surface of Ti-6Al-4V alloy with amino groups that could help to control this interaction. The functionalized layer was deposited by activated vapor silanization (AVS), which has been proven as a reliable and robust technique with other materials. The resulting biofunctional layers were characterized by atomic force microscopy and fluorescence microscopy, with the optimal conditions for the deposition of a homogeneous film with a high density of amino groups being determined. Additionally, the non-toxic nature and stability of the biofunctional layer were confirmed by cell culturing. The results show the formation of a homogeneous biofunctional amine layer on Ti-6Al-4V alloy that may be used as a platform for the subsequent covalent immobilization of proteins or other biomolecules.

Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowińska, Małgorzata, E-mail: malgorzata.sowinska@b-tu.de; Henkel, Karsten; Schmeißer, Dieter

2016-01-15

The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film propertiesmore » can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.« less

Phase transitions of titanite CaTiSiO5 from density functional perturbation theory

NASA Astrophysics Data System (ADS)

Malcherek, Thomas; Fischer, Michael

2018-02-01

Phonon dispersion of titanite CaTiSiO5 has been calculated using the variational density functional perturbation theory. The experimentally known out-of-center distortion of the Ti atom is confirmed. The distortion is associated with a Bu mode that is unstable for wave vectors normal to the octahedral chain direction of the C 2 /c aristotype structure. The layer of wave vectors with imaginary mode frequencies also comprises the Brillouin zone boundary point Y (0 ,1 ,0 ) , which is critical for the transition to the P 21/c ground-state structure. The phonon branch equivalent to the imaginary branch of the titanite aristotype is found to be stable in malayaite CaSnSiO5. The unstable phonon mode in titanite leads to the formation of transoriented short and long Ti-O1 bonds. The Ti as well as the connecting O1 atom exhibit strongly anomalous Born effective charges along the octahedral chain direction [001], indicative of the strong covalency in this direction. Accordingly and in contrast to malayaite, LO-TO splitting is very large in titanite. In the C 2 /c phase of titanite, the Ti-O1-Ti distortion chain is disordered with respect to neighboring distortion chains, as all chain configurations are equally unstable along the phonon branch. This result is in agreement with diffuse x-ray scattering in layers normal to the chain direction that is observed at temperatures close to the P 21/c to C 2 /c transition temperature and above. The resulting dynamic chains of correlated Ti displacements are expected to order in two dimensions to yield the P 21/c ground-state structure of titanite.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

Electronic transport properties of Ti-impurity band in Si

NASA Astrophysics Data System (ADS)

Olea, J.; González-Díaz, G.; Pastor, D.; Mártil, I.

2009-04-01

In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

PubMed

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Atomic layer deposition of nano-TiO2 thin films with enhanced biocompatibility and antimicrobial activity for orthopedic implants

PubMed Central

Liu, Luting; Bhatia, Ritwik; Webster, Thomas J

2017-01-01

Titanium (Ti) and its alloys have been extensively used as implant materials in orthopedic applications. Nevertheless, implants may fail due to a lack of osseointegration and/or infection. The aim of this in vitro study was to endow an implant surface with favorable biological properties by the dual modification of surface chemistry and nanostructured topography. The application of a nanostructured titanium dioxide (TiO2) coating on Ti-based implants has been proposed as a potential way to enhance tissue-implant interactions while inhibiting bacterial colonization simultaneously due to its chemical stability, biocompatibility, and antimicrobial properties. In this paper, temperature-controlled atomic layer deposition (ALD) was introduced for the first time to provide unique nanostructured TiO2 coatings on Ti substrates. The effect of nano-TiO2 coatings with different morphology and structure on human osteoblast and fibroblast functions and bacterial activities was investigated. In vitro results indicated that the TiO2 coating stimulated osteoblast adhesion and proliferation while suppressing fibroblast adhesion and proliferation compared to uncoated materials. In addition, the introduction of nano-TiO2 coatings was shown to inhibit gram-positive bacteria (Staphylococcus aureus), gram-negative bacteria (Escherichia coli), and antibiotic-resistant bacteria (methicillin-resistant Staphylococcus aureus), all without resorting to the use of antibiotics. Our results suggest that the increase in nanoscale roughness and greater surface hydrophilicity (surface energy) together could contribute to increased protein adsorption selectively, which may affect the cellular and bacterial activities. It was found that ALD-grown TiO2-coated samples with a moderate surface energy at 38.79 mJ/m2 showed relatively promising antibacterial properties and desirable cellular functions. The ALD technique provides a novel and effective strategy to produce TiO2 coatings with delicate control of surface nanotopography and surface energy to enhance the interfacial biocompatibility and mitigate bacterial infection, and could potentially be used for improving numerous orthopedic implants. PMID:29263665

Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures

DTIC Science & Technology

2015-08-01

metal structures, memristors, resistive random access memory, RRAM, titanium dioxide, Zr40Cu35Al15Ni10, ZCAN, resistive memory, tunnel junction 16...TiO2 thickness ........................6 1 1. Introduction Resistive-switching memory elements based on metal-insulator-metal (MIM) diodes ...have attracted great interest due to their potential as components for simple, inexpensive, and high-density non-volatile storage devices. MIM diodes

2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

PubMed

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

2013-11-21

A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

Structure of a model TiO2 photocatalytic interface

NASA Astrophysics Data System (ADS)

Hussain, H.; Tocci, G.; Woolcot, T.; Torrelles, X.; Pang, C. L.; Humphrey, D. S.; Yim, C. M.; Grinter, D. C.; Cabailh, G.; Bikondoa, O.; Lindsay, R.; Zegenhagen, J.; Michaelides, A.; Thornton, G.

2017-04-01

The interaction of water with TiO2 is crucial to many of its practical applications, including photocatalytic water splitting. Following the first demonstration of this phenomenon 40 years ago there have been numerous studies of the rutile single-crystal TiO2(110) interface with water. This has provided an atomic-level understanding of the water-TiO2 interaction. However, nearly all of the previous studies of water/TiO2 interfaces involve water in the vapour phase. Here, we explore the interfacial structure between liquid water and a rutile TiO2(110) surface pre-characterized at the atomic level. Scanning tunnelling microscopy and surface X-ray diffraction are used to determine the structure, which is comprised of an ordered array of hydroxyl molecules with molecular water in the second layer. Static and dynamic density functional theory calculations suggest that a possible mechanism for formation of the hydroxyl overlayer involves the mixed adsorption of O2 and H2O on a partially defected surface. The quantitative structural properties derived here provide a basis with which to explore the atomistic properties and hence mechanisms involved in TiO2 photocatalysis.

Structure of a model TiO2 photocatalytic interface.

PubMed

Hussain, H; Tocci, G; Woolcot, T; Torrelles, X; Pang, C L; Humphrey, D S; Yim, C M; Grinter, D C; Cabailh, G; Bikondoa, O; Lindsay, R; Zegenhagen, J; Michaelides, A; Thornton, G

2017-04-01

The interaction of water with TiO 2 is crucial to many of its practical applications, including photocatalytic water splitting. Following the first demonstration of this phenomenon 40 years ago there have been numerous studies of the rutile single-crystal TiO 2 (110) interface with water. This has provided an atomic-level understanding of the water-TiO 2 interaction. However, nearly all of the previous studies of water/TiO 2 interfaces involve water in the vapour phase. Here, we explore the interfacial structure between liquid water and a rutile TiO 2 (110) surface pre-characterized at the atomic level. Scanning tunnelling microscopy and surface X-ray diffraction are used to determine the structure, which is comprised of an ordered array of hydroxyl molecules with molecular water in the second layer. Static and dynamic density functional theory calculations suggest that a possible mechanism for formation of the hydroxyl overlayer involves the mixed adsorption of O 2 and H 2 O on a partially defected surface. The quantitative structural properties derived here provide a basis with which to explore the atomistic properties and hence mechanisms involved in TiO 2 photocatalysis.

Interactions of foreign interstitial and substitutional atoms in bcc iron from ab initio calculations

NASA Astrophysics Data System (ADS)

You, Y.; Yan, M. F.

2013-05-01

C and N atoms are the most frequent foreign interstitial atoms (FIAs), and often incorporated into the surface layers of steels to enhance their properties by thermochemical treatments. Al, Si, Ti, V, Cr, Mn, Co, Ni, Cu, Nb and Mo are the most common alloying elements in steels, also can be called foreign substitutional atoms (FSAs). The FIA and FSA interactions play an important role in the diffusion of C and N atoms, and the microstructures and mechanical properties of surface modified layers. Ab initio calculations based on the density functional theory are carried out to investigate FIA interactions with FSA in ferromagnetic bcc iron. The FIA-FSA interactions are analyzed systematically from five aspects, including interaction energies, density of states (DOS), bond populations, electron density difference maps and local magnetic moments.

Core-shell titanium dioxide-titanium nitride nanotube arrays with near-infrared plasmon resonances

NASA Astrophysics Data System (ADS)

Farsinezhad, Samira; Shanavas, Thariq; Mahdi, Najia; Askar, Abdelrahman M.; Kar, Piyush; Sharma, Himani; Shankar, Karthik

2018-04-01

Titanium nitride (TiN) is a ceramic with high electrical conductivity which in nanoparticle form, exhibits localized surface plasmon resonances (LSPRs) in the visible region of the solar spectrum. The ceramic nature of TiN coupled with its dielectric loss factor being comparable to that of gold, render it attractive for CMOS polarizers, refractory plasmonics, surface-enhanced Raman scattering and a whole host of sensing applications. We report core-shell TiO2-TiN nanotube arrays exhibiting LSPR peaks in the range 775-830 nm achieved by a simple, solution-based, low cost, large area-compatible fabrication route that does not involve laser-writing or lithography. Self-organized, highly ordered TiO2 nanotube arrays were grown by electrochemical anodization of Ti thin films on fluorine-doped tin oxide-coated glass substrates and then conformally coated with a thin layer of TiN using atomic layer deposition. The effects of varying the TiN layer thickness and thermal annealing on the LSPR profiles were also investigated. Modeling the TiO2-TiN core-shell nanotube structure using two different approaches, one employing effective medium approximations coupled with Fresnel coefficients, resulted in calculated optical spectra that closely matched the experimentally measured spectra. Modeling provided the insight that the observed near-infrared resonance was not collective in nature, and was mainly attributable to the longitudinal resonance of annular nanotube-like TiN particles redshifted due to the presence of the higher permittivity TiO2 matrix. The resulting TiO2-TiN core-shell nanotube structures also function as visible light responsive photocatalysts, as evidenced by their photoelectrochemical water-splitting performance under light emitting diode illumination using 400, 430 and 500 nm photons.

Promoted Fixation of Molecular Nitrogen with Surface Oxygen Vacancies on Plasmon-Enhanced TiO2 Photoelectrodes.

PubMed

Li, Chengcheng; Wang, Tuo; Zhao, Zhi-Jian; Yang, Weimin; Li, Jian-Feng; Li, Ang; Yang, Zhilin; Ozin, Geoffrey A; Gong, Jinlong

2018-05-04

A hundred years on, the energy-intensive Haber-Bosch process continues to turn the N 2 in air into fertilizer, nourishing billions of people while causing pollution and greenhouse gas emissions. The urgency of mitigating climate change motivates society to progress toward a more sustainable method for fixing N 2 that is based on clean energy. Surface oxygen vacancies (surface O vac ) hold great potential for N 2 adsorption and activation, but introducing O vac on the very surface without affecting bulk properties remains a great challenge. Fine tuning of the surface O vac by atomic layer deposition is described, forming a thin amorphous TiO 2 layer on plasmon-enhanced rutile TiO 2 /Au nanorods. Surface O vac in the outer amorphous TiO 2 thin layer promote the adsorption and activation of N 2 , which facilitates N 2 reduction to ammonia by excited electrons from ultraviolet-light-driven TiO 2 and visible-light-driven Au surface plasmons. The findings offer a new approach to N 2 photofixation under ambient conditions (that is, room temperature and atmospheric pressure). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE PAGES

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe; ...

2017-05-17

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

Defect assisted coupling of a MoS2/TiO2 interface and tuning of its electronic structure.

PubMed

Chen, Guifeng; Song, Xiaolin; Guan, Lixiu; Chai, Jianwei; Zhang, Hui; Wang, Shijie; Pan, Jisheng; Tao, Junguang

2016-09-02

Although MoS2 based heterostructures have drawn increased attention, the van der Waals forces within MoS2 layers make it difficult for the layers to form strong chemical coupled interfaces with other materials. In this paper, we demonstrate the successful strong chemical attachment of MoS2 on TiO2 nanobelts after appropriate surface modifications. The etch-created dangling bonds on TiO2 surfaces facilitate the formation of a steady chemically bonded MoS2/TiO2 interface. With the aid of high resolution transmission electron microscope measurements, the in-plane structure registry of MoS2/TiO2 is unveiled at the atomic scale, which shows that MoS2[1-10] grows along the direction of TiO2[001] and MoS2[110] parallel to TiO2[100] with every six units of MoS2 superimposed on five units of TiO2. Electronically, type II band alignments are realized for all surface treatments. Moreover, the band offsets are delicately correlated to the surface states, which plays a significant role in their photocatalytic performance.

Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

NASA Astrophysics Data System (ADS)

Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.

2018-04-01

Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Topological mosaics in moiré superlattices of van der Waals heterobilayers

NASA Astrophysics Data System (ADS)

Tong, Qingjun; Yu, Hongyi; Zhu, Qizhong; Wang, Yong; Xu, Xiaodong; Yao, Wang

2017-04-01

Van der Waals (vdW) heterostructures formed by two-dimensional atomic crystals provide a powerful approach towards designer condensed matter systems. Incommensurate heterobilayers with small twisting and/or lattice mismatch lead to the interesting concept of moiré superlattices, where the atomic registry is locally indistinguishable from commensurate bilayers but has local-to-local variation over long range. Here we show that such moiré superlattices can lead to periodic modulation of local topological order in vdW heterobilayers formed by two massive Dirac materials. By tuning the vdW heterojunction from normal to the inverted type-II regime via an interlayer bias, the commensurate heterobilayer can become a topological insulator (TI), depending on the interlayer hybridization controlled by the atomic registry between the vdW layers. This results in a mosaic pattern of TI regions and normal insulator (NI) regions in moiré superlattices, where topologically protected helical modes exist at the TI/NI phase boundaries. By using symmetry-based k .p and tight-binding models, we predict that this topological phenomenon can be present in inverted transition metal dichalcogenides heterobilayers. Our work points to a new means of realizing programmable and electrically switchable topological superstructures from two-dimensional arrays of TI nano-dots to one-dimensional arrays of TI nano-stripes.

Microstructure, tribological and strength properties of the surface layer in metal-ceramic composite nano-structured by electron irradiation

NASA Astrophysics Data System (ADS)

Ovcharenko, V. E.; Ivanov, K. V.; Mokhovikov, A. A.

2017-12-01

Exemplified by metal-ceramic composite TiC-(Ni-Cr) with the ratio of components 50:50, the paper presents findings of the study on patterns of nanoscale structural-phase state formation in the surface layer of the composite under pulsed electron irradiation in inert gas plasmas with different ionization energies and atomic weights and their influence on tribological and strength properties of the surface layer.

Quantum chemical elucidation of the mechanism for hydrogenation of TiO2 anatase crystals

NASA Astrophysics Data System (ADS)

Raghunath, P.; Huang, W. F.; Lin, M. C.

2013-04-01

Hydrogenation of TiO2 is relevant to hydrogen storage and water splitting. We have carried out a detailed mechanistic study on TiO2 hydrogenation through H and/or H2 diffusion from the surface into subsurface layers of anatase TiO2 (101) by periodic density functional theory calculations implementing on-site Coulomb interactions (DFT + U). Both H atoms and H2 molecules can migrate from the crystal surface into TiO2 near subsurface layer with 27.8 and 46.2 kcal/mol energy barriers, respectively. The controlling step for the former process is the dissociative adsorption of H2 on the surface which requires 47.8 kcal/mol of energy barrier. Both hydrogen incorporation processes are expected to be equally favorable. The barrier energy for H2 migration from the first layer of the subsurface Osub1 to the 2nd layer of the subsurface oxygen Osub2 requires only 6.6 kcal. The presence of H atoms on the surface and inside the subsurface layer tends to promote both H and H2 penetration into the subsurface layer by reducing their energy barriers, as well as to prevent the escape of the H2 from the cage by increasing its escaping barrier energy. The H2 molecule inside a cage can readily dissociate and form 2HO-species exothermically (ΔH = -31.0 kcal/mol) with only 26.2 kcal/mol barrier. The 2HO-species within the cage may further transform into H2O with a 22.0 kcal/mol barrier and 19.3 kcal/mol exothermicity relative to the caged H2 molecule. H2O formation following the breaking of Ti-O bonds within the cage may result in the formation of O-vacancies and surface disordering as observed experimentally under a high pressure and moderately high temperature condition. According to density of states analysis, the projected density of states of the interstitial H, H2, and H2O appear prominently within the TiO2 band gap; in addition, the former induces a shift of the band gap position notably towards the conduction band. The thermochemistry for formation of the most stable sub-surface species (2HO and H2O) has been predicted. These results satisfactorily account for the photo-catalytic activity enhancement observed experimentally by hydrogenation at high temperatures and high pressures.

A strategy to stabilise the local structure of Ti{sup 4+} and Zn{sup 2+} species against aging in TiO{sub 2}/aluminium-doped ZnO bi-layers for applications in hybrid solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pellegrino, Giovanna; La Magna, Antonino; Bongiorno, Corrado

We explore a strategy to counteract aging issues in TiO{sub 2}/aluminium-doped ZnO bi-layers used in hybrid solar cells photo-anodes, mainly related to Zn diffusion in the TiO{sub 2} matrix. Different Ti{sup 4+} and Zn{sup 2+} local structures within the anatase grains and along the film thickness were found as a function of post-deposition annealing treatments in the range between 200 °C and 500 °C by synchrotron radiation extended x-ray absorption fine structure analyses. In particular, in the 500 °C-treated sample, diffusion of zinc species along the TiO{sub 2} grain-boundaries has been observed with aging (3 years). In contrast, a mild thermal budget at 200 °Cmore » favours a proper atomic arrangement of the zinc-containing anatase lattice which reduces Zn diffusion, thus guaranteeing a good stability with aging.« less

The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moerman, David; Colbert, Adam E.; Ginger, David S., E-mail: ginger@chem.washington.edu

We study the effects of modifying indium tin oxide electrodes with ultrathin titania (TiO{sub 2}) layers grown via plasma-enhanced atomic layer deposition (PE-ALD). We find an optimal thickness of PE-ALD-grown titania by tracking performance, which initially increases, peaks, and eventually decreases with increasing TiO{sub 2} thickness. We use scanning Kelvin probe microscopy (SKPM) to measure both the local work function and its distribution as a function of TiO{sub 2} thickness. We find that the variance in contact potential difference across the surface of the film is related to either the amorphous or anatase TiO{sub 2} form. Finally, we use localmore » SKPM recombination rate experiments, supported by bulk transient photovoltage and charge extraction measurements. We show that the optimum TiO{sub 2} thickness is the one for which the carrier lifetime is the longest and the charge carrier density is the highest, when the TiO{sub 2} is amorphous, in agreement with the device measurements.« less

Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei Yaowei; Liu Hao; Sheng Ouyang

2011-08-20

Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the filmsmore » deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.« less

Oxygen octahedral distortions in LaMO 3/SrTiO 3 superlattices

DOE PAGES

Sanchez-Santolino, Gabriel; Cabero, Mariona; Varela, Maria; ...

2014-04-24

Here we study the interfaces between the Mott insulator LaMnO 3 (LMO) and the band insulator SrTiO 3 (STO) in epitaxially grown superlattices with different thickness ratios and different transport and magnetic behaviors. Using atomic resolution electron energy-loss spectrum imaging, we analyze simultaneously the structural and chemical properties of these interfaces. We find changes in the oxygen octahedral tilts within the LaMnO 3 layers when the thickness ratio between the manganite and the titanate layers is varied. Superlattices with thick LMO and ultrathin STO layers present unexpected octahedral tilts in the STO, along with a small amount of oxygen vacancies.more » On the other hand, thick STO layers exhibit undistorted octahedra while the LMO layers present reduced O octahedral distortions near the interfaces. In conclusion, these findings will be discussed in view of the transport and magnetic differences found in previous studies.« less

Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

NASA Astrophysics Data System (ADS)

Mühlbacher, Marlene; Bochkarev, Anton S.; Mendez-Martin, Francisca; Sartory, Bernhard; Chitu, Livia; Popov, Maxim N.; Puschnig, Peter; Spitaler, Jürgen; Ding, Hong; Schalk, Nina; Lu, Jun; Hultman, Lars; Mitterer, Christian

2015-08-01

Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of -100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10-16 cm2 s-1 at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl: A rare example of Ti(IV) in a square pyramidal oxygen coordination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batuk, Maria, E-mail: Maria.Batuk@uantwerpen.be; Batuk, Dmitry; Abakumov, Artem M.

A new oxychloride Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl has been synthesized using the solid state method. Its crystal and magnetic structure was investigated in the 1.5–550 K temperature range using electron diffraction, high angle annular dark field scanning transmission electron microscopy, atomic resolution energy dispersive X-ray spectroscopy, neutron and X-ray powder diffraction. At room temperature Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl crystallizes in the P4/mmm space group with the unit cell parameters a=3.91803(3) Å and c=19.3345(2) Å. Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl is a new n=4 member of the oxychloride perovskite-based homologous series A{sub n+1}B{sub n}O{sub 3n−1}Cl. The structure is built of truncated Pb{submore » 3}Fe{sub 3}TiO{sub 11} quadruple perovskite blocks separated by CsCl-type Pb{sub 2}Cl slabs. The perovskite blocks consist of two layers of (Fe,Ti)O{sub 6} octahedra sandwiched between two layers of (Fe,Ti)O{sub 5} square pyramids. The Ti{sup 4+} cations are preferentially located in the octahedral layers, however, the presence of a noticeable amount of Ti{sup 4+} in a five-fold coordination environment has been undoubtedly proven using neutron powder diffraction and atomic resolution compositional mapping. Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl is antiferromagnetically ordered below 450(10) K. The ordered Fe magnetic moments at 1.5 K are 4.06(4) μ{sub B} and 3.86(5) μ{sub B} on the octahedral and square-pyramidal sites, respectively. - Highlights: • Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl has been synthesized using the solid state method. • The structure has been refined using neutron powder diffraction data at 1.5–550 K. • It is a new n=4 member of the perovskite-related homologous series A{sub n+1}B{sub n}O{sub 3n−1}Cl. • Ti{sup 4+} cations have both octahedral and square-pyramidal coordination environment. • Pb{sub 5}Fe{sub 3}TiO{sub 11}Cl is antiferromagnetically ordered below T{sub N}≈450 K.« less

Synthesis of MAX Phases in the Zr-Ti-Al-C System.

PubMed

Tunca, Bensu; Lapauw, Thomas; Karakulina, Olesia M; Batuk, Maria; Cabioc'h, Thierry; Hadermann, Joke; Delville, Rémi; Lambrinou, Konstantina; Vleugels, Jozef

2017-03-20

This study reports on the synthesis and characterization of MAX phases in the (Zr,Ti) n+1 AlC n system. The MAX phases were synthesized by reactive hot pressing and pressureless sintering in the 1350-1700 °C temperature range. The produced ceramics contained large fractions of 211 and 312 (n = 1, 2) MAX phases, while strong evidence of a 413 (n = 3) stacking was found. Moreover, (Zr,Ti)C, ZrAl 2 , ZrAl 3 , and Zr 2 Al 3 were present as secondary phases. In general, the lattice parameters of the hexagonal 211 and 312 phases followed Vegard's law over the complete Zr-Ti solid solution range, but the 312 phase showed a non-negligible deviation from Vegard's law around the (Zr 0.33 ,Ti 0.67 ) 3 Al 1.2 C 1.6 stoichiometry. High-resolution scanning transmission electron microscopy combined with X-ray diffraction demonstrated ordering of the Zr and Ti atoms in the 312 phase, whereby Zr atoms occupied preferentially the central position in the close-packed M 6 X octahedral layers. The same ordering was also observed in 413 stackings present within the 312 phase. The decomposition of the secondary (Zr,Ti)C phase was attributed to the miscibility gap in the ZrC-TiC system.

Significance of a Noble Metal Nanolayer on the UV and Visible Light Photocatalytic Activity of Anatase TiO2 Thin Films Grown from a Scalable PECVD/PVD Approach.

PubMed

Baba, Kamal; Bulou, Simon; Quesada-Gonzalez, Miguel; Bonot, Sébastien; Collard, Delphine; Boscher, Nicolas D; Choquet, Patrick

2017-11-29

UV and visible light photocatalytic composite Pt and Au-TiO 2 coatings have been deposited on silicon and glass substrates at low temperature using a hybrid ECWR-PECVD/MS-PVD process. Methylene blue, stearic acid, and sulfamethoxazole were used as dye, organic, and antibiotic model pollutants, respectively, to demonstrate the efficiency of these nanocomposite coatings for water decontamination or self-cleaning surfaces applications. Raman investigations revealed the formation of anatase polymorph of TiO 2 in all synthesized coatings with a shifting of the main vibrational mode peak to higher wavenumber in the case of Au-TiO 2 coating, indicating an increase number of crystalline defects within this coating. Because of the difference of the chemical potentials of each of the investigated noble metals, the sputtered metal layers exhibit different morphology. Pt sputtered atoms, with high surface adhesion, promote formation of a smooth 2D layer. On the other hand, Au sputtered atoms with higher cohesive forces promote the formation of 5-10 nm nanoparticles. As a result, the surface plasmon resonance phenomenon was observed in the Au-TiO 2 coatings. UV photoactivity of the nanocomposite coatings was enhanced 1.5-3 times and 1.3 times for methylene blue and stearic acid, respectively, thanks to the enhancement of electron trapping in the noble metal layer. This electron trapping phenomenon is higher in the Pt-TiO 2 coating because of its larger work function. On the other hand, the enhancement of the visible photoactivity was more pronounced (3 and 7 times for methylene blue and stearic acid, respectively) in the case of Au-TiO 2 thanks to the surface plasmon resonance. Finally, these nanocomposite TiO 2 coatings exhibited also a good ability for the degradation of antibiotics usually found in wastewater such as sulfamethoxazole. However, a complementary test have showed an increase of the toxicity of the liquid medium after photocatalysis, which could be due the presence of sulfamethoxazole's transformation byproducts.

On the small angle twist sub-grain boundaries in Ti3AlC2.

PubMed

Zhang, Hui; Zhang, Chao; Hu, Tao; Zhan, Xun; Wang, Xiaohui; Zhou, Yanchun

2016-04-01

Tilt-dominated grain boundaries have been investigated in depth in the deformation of MAX phases. In stark contrast, another important type of grain boundaries, twist grain boundaries, have long been overlooked. Here, we report on the observation of small angle twist sub-grain boundaries in a typical MAX phase Ti3AlC2 compressed at 1200 °C, which comprise hexagonal screw dislocation networks formed by basal dislocation reactions. By first-principles investigations on atomic-scale deformation and general stacking fault energy landscapes, it is unequivocally demonstrated that the twist sub-grain boundaries are most likely located between Al and Ti4f (Ti located at the 4f Wyckoff sites of P63/mmc) layers, with breaking of the weakly bonded Al-Ti4f. The twist angle increases with the increase of deformation and is estimated to be around 0.5° for a deformation of 26%. This work may shed light on sub-grain boundaries of MAX phases, and provide fundamental information for future atomic-scale simulations.

UiO-66-NH2 Metal-Organic Framework (MOF) Nucleation on TiO2, ZnO, and Al2O3 Atomic Layer Deposition-Treated Polymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants.

PubMed

Lee, Dennis T; Zhao, Junjie; Oldham, Christopher J; Peterson, Gregory W; Parsons, Gregory N

2017-12-27

Metal-organic frameworks (MOFs) chemically bound to polymeric microfibrous textiles show promising performance for many future applications. In particular, Zr-based UiO-66-family MOF-textiles have been shown to catalytically degrade highly toxic chemical warfare agents (CWAs), where favorable MOF/polymer bonding and adhesion are attained by placing a nanoscale metal-oxide layer on the polymer fiber preceding MOF growth. To date, however, the nucleation mechanism of Zr-based MOFs on different metal oxides and how product performance is affected are not well understood. Herein, we provide new insight into how different inorganic nucleation films (i.e., Al 2 O 3 , ZnO, or TiO 2 ) conformally coated on polypropylene (PP) nonwoven textiles via atomic layer deposition (ALD) influence the quality, overall surface area, and the fractional yield of UiO-66-NH 2 MOF crystals solvothermally grown on fiber substrates. Of the materials explored, we find that TiO 2 ALD layers lead to the most effective overall MOF/fiber adhesion, uniformity, and a rapid catalytic degradation rate for a CWA simulant, dimethyl p-nitrophenyl phosphate (DMNP) with t 1/2 = 15 min, 580-fold faster than the catalytic performance of untreated PP textiles. Interestingly, compared to ALD TiO 2 and Al 2 O 3 , ALD ZnO induces a larger MOF yield in solution and mass loading on PP fibrous mats. However, this larger MOF yield is ascribed to chemical instability of the ZnO layer under MOF formation condition, leading to Zn 2+ ions that promote further homogeneous MOF growth. Insights presented here improve understanding of compatibility between active MOF materials and substrate surfaces, which we believe will help advanced MOF composite materials for a variety of useful functions.

Structure and optical properties of TiO2 thin films deposited by ALD method

NASA Astrophysics Data System (ADS)

Szindler, Marek; Szindler, Magdalena M.; Boryło, Paulina; Jung, Tymoteusz

2017-12-01

This paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2 was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

From Single Atoms to Nanoparticles: Autocatalysis and Metal Aggregation in Atomic Layer Deposition of Pt on TiO2 Nanopowder.

PubMed

Grillo, Fabio; Van Bui, Hao; La Zara, Damiano; Aarnink, Antonius A I; Kovalgin, Alexey Y; Kooyman, Patricia; Kreutzer, Michiel T; van Ommen, Jan Rudolf

2018-06-01

A fundamental understanding of the interplay between ligand-removal kinetics and metal aggregation during the formation of platinum nanoparticles (NPs) in atomic layer deposition of Pt on TiO 2 nanopowder using trimethyl(methylcyclo-pentadienyl)platinum(IV) as the precursor and O 2 as the coreactant is presented. The growth follows a pathway from single atoms to NPs as a function of the oxygen exposure (P O2 × time). The growth kinetics is modeled by accounting for the autocatalytic combustion of the precursor ligands via a variant of the Finke-Watzky two-step model. Even at relatively high oxygen exposures (<120 mbar s) little to no Pt is deposited after the first cycle and most of the Pt is atomically dispersed. Increasing the oxygen exposure above 120 mbar s results in a rapid increase in the Pt loading, which saturates at exposures > 120 mbar s. The deposition of more Pt leads to the formation of NPs that can be as large as 6 nm. Crucially, high P O2 (≥5 mbar) hinders metal aggregation, thus leading to narrow particle size distributions. The results show that ALD of Pt NPs is reproducible across small and large surface areas if the precursor ligands are removed at high P O2 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scanning probe microscopy for the analysis of composite Ti/hydrocarbon plasma polymer thin films

NASA Astrophysics Data System (ADS)

Choukourov, A.; Grinevich, A.; Slavinska, D.; Biederman, H.; Saito, N.; Takai, O.

2008-03-01

Composite Ti/hydrocarbon plasma polymer films with different Ti concentration were deposited on silicon by dc magnetron sputtering of titanium in an atmosphere of argon and hexane. As measured by Kelvin force microscopy and visco-elastic atomic force microscopy, respectively, surface potential and hardness increase with increasing Ti content. Adhesion force to silicon and to fibrinogen molecules was stronger for the Ti-rich films as evaluated from the AFM force-distance curves. Fibrinogen forms a very soft layer on these composites with part of the protein molecules embedded in the outermost region of the plasma polymer. An increase of the surface charge due to fibrinogen adsorption has been observed and attributed to positively charged αC domains of fibrinogen molecule.

Great enhancement of pyroelectric properties for Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films on Pt-Si substrates by inserting a self-buffered layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, C. G.; Li, Y. R.; Zhu, J.

2009-02-15

(100)-Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} (BST) films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16x10{sup 4} {mu}C m{sup -2} K{sup -1} and 2.18x10{sup -4} Pa{sup -1/2}, respectively. The detectivity of 9.4x10{sup 7}more » cm Hz{sup 1/2} W{sup -1} was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO{sub 2} films.« less

Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

NASA Astrophysics Data System (ADS)

Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

2018-05-01

Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

In situ stress evolution during magnetron sputtering of transition metal nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadias, G.; Guerin, Ph.

2008-09-15

Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

Magnetic Interactions at the Nanoscale in Trilayer Titanates

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.; Liu, Xiaoran; Meyers, D.; Middey, S.; Choudhury, D.; Shafer, P.; Guo, Jiandong; Freeland, J. W.; Arenholz, E.; Gu, Lin; Chakhalian, J.

2016-02-01

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3 /SrTiO3/YTiO3 , in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3 /SrTiO3 and SrTiO3 /YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3 /SrTiO3 and localized SrTiO3 /YTiO3 electrons. Our results provide a route with prospects for exploring new magnetic interfaces, designing a tunable two-dimensional d -electron Kondo lattice, and potential spin Hall applications.

Tunneling Spectroscopy of MoN and NbxTi1-xN Thin Films Grown by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Chaoyue; Groll, Nickolas; Klug, Jeffrey; Becker, Nicholas; Altin, Serdar; Proslier, Thomas; Zasadzinski, John

2014-03-01

Tunneling I(V) and dI/dV vs. V are reported on superconducting thin films of MoN and NbxTi1-xN using a point contact method with a Au tip. The films are grown by the chemical process of atomic layer deposition (ALD) onto various substrates (Si, quartz, sapphire) held at 450 C. Resistively measured superconducting Tc values up to 12K and 13K are found for the MoN and NbxTi1-xN respectively. Artificial tunnel barriers (1-3 nm thick) of Al2O3, also grown by ALD, are shown to provide much improved tunneling characteristics compared to the native oxides. Relatively high quality gap features are observed with zero-bias conductance values as low as ~ 10% of the high bias values. Gap parameters Δ ~ 2.0meV are found for the MoN and Δ ~ 2.0-2.4 meV for the NbxTi1-xN which follow the BCS temperature dependence and close near the measured film Tc indicating bulk superconductivity at the surface. The suitability of such conformal ALD grown films for potential superconducting devices is discussed. This work was supported by the U.S. Department of Energy, Office of Science under contract No. DE-AC02-06CH11357.

Atomic layer deposition-A novel method for the ultrathin coating of minitablets.

PubMed

Hautala, Jaana; Kääriäinen, Tommi; Hoppu, Pekka; Kemell, Marianna; Heinämäki, Jyrki; Cameron, David; George, Steven; Juppo, Anne Mari

2017-10-05

We introduce atomic layer deposition (ALD) as a novel method for the ultrathin coating (nanolayering) of minitablets. The effects of ALD coating on the tablet characteristics and taste masking were investigated and compared with the established coating method. Minitablets containing bitter tasting denatonium benzoate were coated by ALD using three different TiO 2 nanolayer thicknesses (number of deposition cycles). The established coating of minitablets was performed in a laboratory-scale fluidized-bed apparatus using four concentration levels of aqueous Eudragit ® E coating polymer. The coated minitablets were studied with respect to the surface morphology, taste masking capacity, in vitro disintegration and dissolution, mechanical properties, and uniformity of content. The ALD thin coating resulted in minimal increase in the dimensions and weight of minitablets in comparison to original tablet cores. Surprisingly, ALD coating with TiO 2 nanolayers decreased the mechanical strength, and accelerated the in vitro disintegration of minitablets. Unlike previous studies, the studied levels of TiO 2 nanolayers on tablets were also inadequate for effective taste masking. In summary, ALD permits a simple and rapid method for the ultrathin coating (nanolayering) of minitablets, and provides nanoscale-range TiO 2 coatings on porous minitablets. More research, however, is needed to clarify its potential in tablet taste masking applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

Atomic layer deposition of TIO{sub 2} thin films on nanoporous alumina templates : medical applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narayan, R. J.; Monteiro-Riviere, N. A.; Brigmon, R. L.

2009-06-01

Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of a nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Neither the 20 nm nor the 100 nm TiO{sub 2}-coated nanoporous alumina membranes exhibited statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. Nanostructured materialsmore » prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.« less

Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD)

PubMed Central

Nazarov, Denis V.; Zemtsova, Elena G.; Valiev, Ruslan Z.; Smirnov, Vladimir M.

2015-01-01

In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD), chemical etching and atomic layer deposition (ALD). For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions) and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD). Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material. PMID:28793716

Single-layer TiO x reconstructions on SrTiO 3 (111): (√7 × √7)R19.1°, (√13 × √13)R13.9°, and related structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersen, Tassie K.; Wang, Shuqiu; Castell, Martin R.

The atomic structures of two reconstructions, (√7 × √7)R19.1° and (√13 × √13)R13.9°, on the SrTiO 3 (111) surface were determined using a combination of density functional theory and scanning tunneling microscopy data and simulations. The combination of these methods allows for potential surface structures to be generated and verified in the absence of diffraction data, providing another tool for solving surface reconstructions. These reconstructions belong to the same stoichiometric, nSrTiO 3 • mTiO 2, structural family made up of an interconnected, single layer of edge-sharing TiO 6 and TiO 5[] octahedra. This family is found to include the previously-solvedmore » (2 × 2)a reconstruction as its smallest unit-cell sized member and serves as a tool for better understanding and predicting the structure of other reconstructions of arbitrary surface unit-cell size on SrTiO 3 (111). This reconstruction family and the calculations of surface energies for different hypothesis structures also shed light on the structure of Schottky defects observed on these reconstructed SrTO 3 (111) surfaces.« less

Influence of the Metal-MoS2 interface on MoS2 Transistor Performance

NASA Astrophysics Data System (ADS)

Yuan, Hui; Cheng, Guangjun; Hight Walker, Angela; You, Lin; Kopanski, Joseph J.; Li, Qiliang; Richter, Curt A.

2015-03-01

We compare the electrical characteristics of MoS2 field-effect transistors (FETS) with Ag source/drain contacts with transistors with Ti contacts, and we demonstrate that the metal-MoS2 interface is crucial to the final device performance. The topography of 5nm Au/5nm Ag (contact layer) and 5nm Au/5nm Ti metal films deposited onto mono- and few-layer MoS2 was characterized by using scanning electron microscopy and atomic force microscopy. The surface morphology of the Au/Ti films on MoS2 shows a rough, dewetting pattern while Au/Ag forms smooth, dense films. These smoother and denser Au/Ag contacts lead to improved carrier transport efficiency. FETs with Ag contacts show more than 60 times higher on-state current and a steeper subthreshold slope. Raman spectroscopy of MoS2 covered with Au/Ag or Au/Ti films revealed that the contact layer is Ag or Ti, respectively. In addition, there is a dramatic difference in the heat transfer between the MoS2 and the two metals: while laser heating is observed in Au/Ti covered MoS2, no heating effects are seen in Au/Ag covered MoS2. It is reasonable to conclude that the smoother and denser Ag contact leads to higher carrier transport efficiency and contributes to the improved thermal properties.

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

NASA Astrophysics Data System (ADS)

Milosavljević, M.; Milinović, V.; Peruško, D.; Grce, A.; Stojanović, M.; Pjević, D.; Mitrić, M.; Kovač, J.; Homewood, K. P.

2011-10-01

The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (˜23 nm) and Ti (˜17 nm) layers of a total thickness ˜200 nm. They were irradiated at room temperature with 200 keV Ar +, to the fluences from 5 × 10 15 to 2 × 10 16 ions/cm 2. The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom ˜130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Δ H f = +2 kJ/mol). It is estimated that up to ˜5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Seung Sae; Yu, Jung Ho; Lu, Di

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO 3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO 3 membrane lattice collapsesmore » below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. Finally, the transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices.« less

Titanium bone implants with superimposed micro/nano-scale porosity and antibacterial capability

NASA Astrophysics Data System (ADS)

Necula, B. S.; Apachitei, I.; Fratila-Apachitei, L. E.; van Langelaan, E. J.; Duszczyk, J.

2013-05-01

This study aimed at producing a multifunctional layer with micro/nano-interconnected porosity and antibacterial capability on a rough macro-porous plasma sprayed titanium surface using the plasma electrolytic oxidation process. The layers were electrochemically formed in electrolytes based on calcium acetate and calcium glycerophosphate salts bearing dispersed Ag nanoparticles. They were characterized with respect to surface morphology and chemical composition using a scanning electron microscope equipped with the energy dispersive spectroscopy and back scattering detectors. Scanning electron microscopy images showed the formation of a micro/nano-scale porous layer, comprised of TiO2 bearing Ca and P species and Ag nanoparticles, following accurately the surface topography of the plasma sprayed titanium coating. The Ca/P atomic ratio was found to be close to that of bone apatite. Ag nanoparticles were incorporated on both on top and inside the porous structure of the TiO2 layer.

CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation

NASA Astrophysics Data System (ADS)

Krishna Karuturi, Siva; Yew, Rowena; Reddy Narangari, Parvathala; Wong-Leung, Jennifer; Li, Li; Vora, Kaushal; Tan, Hark Hoe; Jagadish, Chennupati

2018-03-01

Cadmium sulfide (CdS) is a unique semiconducting material for solar hydrogen generation applications with a tunable, narrow bandgap that straddles water redox potentials. However, its potential towards efficient solar hydrogen generation has not yet been realized due to low photon-to-current conversions, high charge carrier recombination and the lack of controlled preparation methods. In this work, we demonstrate a highly efficient CdS/TiO2 heterostructured photoelectrode using atomic layer deposition and solution ion transfer reactions. Enabled by the well-controlled deposition of CdS nanocrystals on TiO2 inverse opal (TiIO) nanostructures using the proposed method, a saturation photocurrent density of 9.1 mA cm-2 is realized which is the highest ever reported for CdS-based photoelectrodes. We further demonstrate that the passivation of a CdS surface with an ultrathin amorphous layer (˜1.5 nm) of TiO2 improves the charge collection efficiency at low applied potentials paving the way for unassisted solar hydrogen generation.

Two-Dimensional, Ordered, Double Transition Metals Carbides (MXenes)

DOE PAGES

Anasori, Babak; Xie, Yu; Beidaghi, Majid; ...

2015-07-24

The higher the chemical diversity and structural complexity of two-dimensional (2D) materials, the higher the likelihood they possess unique and useful properties. In this paper, density functional theory (DFT) is used to predict the existence of two new families of 2D ordered, carbides (MXenes), M' 2M"C 2 and M' 2M" 2C 3, where M' and M" are two different early transition metals. In these solids, M' layers sandwich M" carbide layers. By synthesizing Mo 2TiC 2T x, Mo 2Ti 2C 3T x, and Cr 2TiC 2T x (where T is a surface termination), we validated the DFT predictions. Since themore » Mo and Cr atoms are on the outside, they control the 2D flakes’ chemical and electrochemical properties. The latter was proven by showing quite different electrochemical behavior of Mo 2TiC 2T x and Ti 3C 2T x. Finally, this work further expands the family of 2D materials, offering additional choices of structures, chemistries, and ultimately useful properties.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anasori, Babak; Xie, Yu; Beidaghi, Majid

The higher the chemical diversity and structural complexity of two-dimensional (2D) materials, the higher the likelihood they possess unique and useful properties. In this paper, density functional theory (DFT) is used to predict the existence of two new families of 2D ordered, carbides (MXenes), M' 2M"C 2 and M' 2M" 2C 3, where M' and M" are two different early transition metals. In these solids, M' layers sandwich M" carbide layers. By synthesizing Mo 2TiC 2T x, Mo 2Ti 2C 3T x, and Cr 2TiC 2T x (where T is a surface termination), we validated the DFT predictions. Since themore » Mo and Cr atoms are on the outside, they control the 2D flakes’ chemical and electrochemical properties. The latter was proven by showing quite different electrochemical behavior of Mo 2TiC 2T x and Ti 3C 2T x. Finally, this work further expands the family of 2D materials, offering additional choices of structures, chemistries, and ultimately useful properties.« less

Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

NASA Astrophysics Data System (ADS)

Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

2016-05-01

Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

PubMed

Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

2009-05-15

For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

Surface free energy of TiC layers deposited by electrophoretic deposition (EPD)

NASA Astrophysics Data System (ADS)

Gorji, Mohammad Reza; Sanjabi, Sohrab

2018-01-01

In this study porous structure coatings of bare TiC (i.e. 20 nm, 0.7 µm and 5/45 µm) and core-shell structures of TiC/NiP synthesized through electroless plating were deposited by EPD. Room temperature surface free energy (i.e. γs) of TiC and TiC/NiP coatings were determined via measuring contact angles of distilled water and diiodemethane liquids. The effect of Ni-P shell on spreading behavior of pure copper on porous EPD structures was also investigated by high temperature wetting experiments. According to the results existence of a Ni-P layer around the TiC particles has led to roughness (i.e. at least 0.1 µm), and porosity mean length (i.e. at least 1 µm) increase. This might be related to various sizes of TiC agglomerates formed during electroless plating. It has been observed that room temperature γs changed from 44.49 to 54.12 mJ.m-2 as a consequence of particle size enlargement for TiC. The highest and lowest (67.25 and 44.49 mJ.m-2) γs were measured for TiC nanoparticles which showed 1.5 times increase in surface free energy after being plated with Ni-P. It was also observed that plating Ni-P altered non-spreading (θs > 100 o) behavior of TiC to full-spreading ((θs 0o)) which can be useful for preparation of hard coatings by infiltration sintering phenomenon. Zeta potential of EPD suspensions, morphology, phase structure and topography of as-EPD layers were investigated through Zetasizer, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and atomic force microscopy (AFM) instruments respectively.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

PubMed

Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-12-14

The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P.

Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detectionmore » limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.« less

A comparative study of the Aurivillius phase ferroelectrics CaBi 4Ti 4O 15 and BaBi 4Ti 4O 15

NASA Astrophysics Data System (ADS)

Tellier, J.; Boullay, Ph.; Manier, M.; Mercurio, D.

2004-06-01

The room temperature structures of the four-layer Aurivillius phase ferroelectrics CaBi 4Ti 4O 15 and BaBi 4Ti 4O 15 are determined by means of single crystal X-ray diffraction. Regarding the CaBi 4Ti 4O 15 phase, in agreement with the tolerance factor, a significant deformation of the perovskite blocks is observed. The rotation system of the octahedra is typical from even layer Aurivillius phases and leads to the use of the space group A2 1am. For the BaBi 4Ti 4O 15 phase, only a weak variation with respect to the F2 mm space group can be suggested from single crystal X-ray diffraction. A significant presence of Ba atoms in the [ M2O 2] slabs is confirmed in agreement with the previous works but specific Ba 2+ and Bi 3+ sites have to be considered due to the large difference in bounding requirement of these cations. Possible origins for the ferroelectric relaxor behavior of the Ba-based compound are discussed in view of the presented structural analyses.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

PubMed

Breckenfeld, Eric; Kim, Heungsoo; Burgess, Katherine; Charipar, Nicholas; Cheng, Shu-Fan; Stroud, Rhonda; Piqué, Alberto

2017-01-18

Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.

Visible Light Driven Benzyl Alcohol Dehydrogenation in a Dye-Sensitized Photoelectrosynthesis Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Wenjing; Vannucci, Aaron K.; Farnum, Byron H.

2014-06-27

Light-driven dehydrogenation of benzyl alcohol (BnOH) to benzaldehyde and hydrogen has been shown to occur in a dye-sensitized photoelectrosynthesis cell (DSPEC). In the DSPEC, the photoanode consists of mesoporous films of TiO2 nanoparticles or of core/shell nanoparticles with tin-doped In2O3 nanoparticle (nanoITO) cores and thin layers of TiO2 deposited by atomic layer deposition (nanoITO/TiO2). Metal oxide surfaces were coderivatized with both a ruthenium polypyridyl chromophore in excess and an oxidation catalyst. Chromophore excitation and electron injection were followed by cross-surface electron-transfer activation of the catalyst to RuIV=O2+, which then oxidizes benzyl alcohol to benzaldehyde. The injected electrons are transferred tomore » a Pt electrode for H2 production. The nanoITO/TiO2 core/shell structure causes a decrease of up to 2 orders of magnitude in back electron-transfer rate compared to TiO2. At the optimized shell thickness, sustained absorbed photon to current efficiency of 3.7% was achieved for BnOH dehydrogenation, an enhancement of ~10 compared to TiO2.« less

TiO2-graphene oxide nanocomposite as advanced photocatalytic materials.

PubMed

Stengl, Václav; Bakardjieva, Snejana; Grygar, Tomáš Matys; Bludská, Jana; Kormunda, Martin

2013-02-27

Graphene oxide composites with photocatalysts may exhibit better properties than pure photocatalysts via improvement of their textural and electronic properties. TiO2-Graphene Oxide (TiO2 - GO) nanocomposite was prepared by thermal hydrolysis of suspension with graphene oxide (GO) nanosheets and titania peroxo-complex. The characterization of graphene oxide nanosheets was provided by using an atomic force microscope and Raman spectroscopy. The prepared nanocomposites samples were characterized by Brunauer-Emmett-Teller surface area and Barrett-Joiner-Halenda porosity, X-ray Diffraction, Infrared Spectroscopy, Raman Spectroscopy and Transmission Electron Microscopy. UV/VIS diffuse reflectance spectroscopy was employed to estimate band-gap energies. From the TiO2 - GO samples, a 300 μm thin layer on a piece of glass 10×15 cm was created. The photocatalytic activity of the prepared layers was assessed from the kinetics of the photocatalytic degradation of butane in the gas phase. The best photocatalytic activity under UV was observed for sample denoted TiGO_100 (k = 0.03012 h-1), while sample labeled TiGO_075 (k = 0.00774 h-1) demonstrated the best activity under visible light.

TiO2-graphene oxide nanocomposite as advanced photocatalytic materials

PubMed Central

2013-01-01

Background Graphene oxide composites with photocatalysts may exhibit better properties than pure photocatalysts via improvement of their textural and electronic properties. Results TiO2-Graphene Oxide (TiO2 - GO) nanocomposite was prepared by thermal hydrolysis of suspension with graphene oxide (GO) nanosheets and titania peroxo-complex. The characterization of graphene oxide nanosheets was provided by using an atomic force microscope and Raman spectroscopy. The prepared nanocomposites samples were characterized by Brunauer–Emmett–Teller surface area and Barrett–Joiner–Halenda porosity, X-ray Diffraction, Infrared Spectroscopy, Raman Spectroscopy and Transmission Electron Microscopy. UV/VIS diffuse reflectance spectroscopy was employed to estimate band-gap energies. From the TiO2 - GO samples, a 300 μm thin layer on a piece of glass 10×15 cm was created. The photocatalytic activity of the prepared layers was assessed from the kinetics of the photocatalytic degradation of butane in the gas phase. Conclusions The best photocatalytic activity under UV was observed for sample denoted TiGO_100 (k = 0.03012 h-1), while sample labeled TiGO_075 (k = 0.00774 h-1) demonstrated the best activity under visible light. PMID:23445868

Microstructure and mechanical properties of titanium aluminum carbides neutron irradiated at 400–700 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, Caen; Parish, Chad M.; Shih, Chunghao

2017-02-23

Here, this work reports the first mechanical properties of Ti 3AlC 2-Ti 5Al 2C 3 materials neutron irradiated at ~400, 630 and 700 °C at a fluence of 2 × 10 25 n m -2 (E > 0.1 MeV) or a displacement dose of ~2 dpa. After irradiation at ~400 °C, anisotropic swelling and loss of 90% flexural strength was observed. After irradiation at ~630–700 °C, properties were unchanged. Microcracking and kinking-delamination had occurred during irradiation at ~630–700 °C. Further examination showed no cavities in Ti 3AlC 2 after irradiation at ~630 °C, and MX and A lamellae were preserved.more » However, disturbance of (0004) reflections corresponding to M-A layers was observed, and the number density of line/planar defects was ~10 23 m -3 of size 5–10 nm. HAADF identified these defects as antisite Ti Al atoms. Finally, Ti 3AlC 2-Ti 5Al 2C 3 shows abrupt dynamic recovery of A-layers from ~630 °C, but a higher temperature appears necessary for full recovery.« less

Enhancing the stability of copper chromite catalysts for the selective hydrogenation of furfural with ALD overcoating (II) – Comparison between TiO2 and Al2O3 overcoatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongbo; Canlas, Christian; Kropf, A. Jeremy

2015-01-01

TiO2 atomic layer deposition (ALD) overcoatings were applied to copper chromite catalysts to increase the stability for 2-furfuraldehyde (“furfural”) hydrogenation. After overcoating, about 75% activity was preserved compared to neat copper chromite: much higher activity than an alumina ALD overcoated catalyst with a similar number of ALD cycles. The effects of ALD TiO2 on the active Cu nanoparticles were studied extensively using both in-situ TPR/isothermal-oxidation and in-situ furfural hydrogenation via Cu XAFS. The redox properties of Cu were modified only slightly by the TiO2 ALD overcoat. However, a subtle electronic interaction was observed between the TiO2 ALD layers and themore » Cu nanoparticles. With calcination at 500 °C the interaction between the TiO2 overcoat and the underlying catalyst is strong enough to inhibit migration and site blocking by chromite, but is sufficiently weaker than the interaction between the Al2O3 overcoat and copper chromite that it does not strongly inhibit the catalytic activity of the copper nanoparticles.« less

An Atomic-Scale X-ray View of Functional Oxide Films

NASA Astrophysics Data System (ADS)

Tung, I.-Cheng

Complex oxides are a class of materials that exhibit a wide variety of physical functionalities, such as ferroelectricity, colossal magnetoresistance, mulitferroicity and superconductivity, with outstanding potential for meeting many of our technological demands. The primary objective of this dissertation is to understand the structural and electronic behavior of complex oxide ultrathin films subjected to confinement, lattice misfit and broken symmetry at the interface. In complex oxide ultrathin films, heteroepitaxial synthesis has evolved into a reliable strategy to engineer orbital-lattice interactions in correlated materials and led to new and entirely unexpected phenomena at their interfaces. I experimentally demonstrated that the bulk crystal symmetry directs the atomic and orbital responses adopted by coherently strained ultrathin films of RNiO3 (R = La, Nd) with detailed X-ray scattering, polarization-dependent X-ray absorption spectroscopy (XAS) and supported by a mathematical point group symmetry analysis, found that strain-stabilized phases maintain a ``memory'' of their bulk state. This topic, however, touched only upon the properties of such films. A fundamental challenge in this research area occurs before this and centers around the understanding of how to create high-quality films with arbitrary configurations. A longstanding challenge in the oxide thin film community has been the growth of An+1BnO3 n+1 Ruddlesden-Popper (RP) compounds. To understand this problem, we have utilized a newly constructed oxide MBE with in situ synchrotron X-ray scattering capability to study the initial growth of such layered oxides and track the dynamic evolution. X-ray results are supported by theoretical calculations that demonstrated the layered oxide films dynamically rearrange during growth, leading to structures that are highly unexpected, and suggest a general approach that may be essential for the construction of metastable RP phases with performing the first atomically controlled synthesis of single-crystalline La3Ni2O7. By building upon this knowledge, I have completed the first to date study of in situ surface X-ray scattering during homoepitaxial MBE growth of SrTiO3, which demonstrates codeposition is consistent with a 2D island growth mode with SrTiO3 islands, but shuttered deposition proceeds by the growth of SrO islands which then restructure into atomically flat SrTiO3 layer during the deposition of the TiO2. From this point, we have conducted a detailed microscopic study of epitaxial LaNiO3 ultrathin films grown on SrTiO3 (001) by using reactive MBE with in situ surface X-ray diffraction and ex situ soft XAS to explore the influence of polar mismatch on the resulting structural and electronic properties. Overall, this thesis highlights the power of artificial confinement to harness control over competing phases in complex oxides with atomic-scale precision.

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE PAGES

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; ...

2016-09-09

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Cuiping, E-mail: licp226@126.com, E-mail: limingji@163.com; Li, Mingji, E-mail: licp226@126.com, E-mail: limingji@163.com; Wu, Xiaoguo

2016-04-07

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Timore » interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.« less

Investigation of energy band alignments and interfacial properties of rutile NMO2/TiO2 (NM = Ru, Rh, Os, and Ir) by first-principles calculations.

PubMed

Yang, Chen; Zhao, Zong-Yan

2017-11-08

In the field of photocatalysis, constructing hetero-structures is an efficient strategy to improve quantum efficiency. However, a lattice mismatch often induces unfavorable interfacial states that can act as recombination centers for photo-generated electron-hole pairs. If the hetero-structure's components have the same crystal structure, this disadvantage can be easily avoided. Conversely, in the process of loading a noble metal co-catalyst onto the TiO 2 surface, a transition layer of noble metal oxides is often formed between the TiO 2 layer and the noble metal layer. In this article, interfacial properties of hetero-structures composed of a noble metal dioxide and TiO 2 with a rutile crystal structure have been systematically investigated using first-principles calculations. In particular, the Schottky barrier height, band bending, and energy band alignments are studied to provide evidence for practical applications. In all cases, no interfacial states exist in the forbidden band of TiO 2 , and the interfacial formation energy is very small. A strong internal electric field generated by interfacial electron transfer leads to an efficient separation of photo-generated carriers and band bending. Because of the differences in the atomic properties of the components, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures demonstrate band dividing, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures have a pseudo-gap near the Fermi energy level. Furthermore, NMO 2 /TiO 2 hetero-structures show upward band bending. Conversely, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures present a relatively strong infrared light absorption, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures show an obvious absorption edge in the visible light region. Overall, considering all aspects of their properties, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures are more suitable than others for improving the photocatalytic performance of TiO 2 . These findings will provide useful information for understanding the role and effects of a noble metal dioxide as a transition layer between a noble metal co-catalyst and a TiO 2 photocatalyst.

Atomic structures and electronic properties of 2H-NbSe2: The impact of Ti doping

NASA Astrophysics Data System (ADS)

Li, Hongping; Chen, Lin; Zhang, Kun; Liang, Jiaqing; Tang, Hua; Li, Changsheng; Liu, Xiaojuan; Meng, Jian; Wang, Zhongchang

2014-09-01

Layered transition metal dichalcogenides have aroused renewed interest as electronic materials, yet their electronic performances could be modified by chemical doping. Here, we perform a systematic first-principles calculation to investigate the effect of Ti doping on atomic structure and electronic properties of the 2H-NbSe2. We consider a total of three possible Ti-doping models and find that both the substitution and intercalated models are chemically preferred with the intercalation model being more favorable than the substitution one. Structural analyses reveal a slight lattice distortion triggered by Ti doping, but the original structure of 2H-NbSe2 is maintained. We also observe an expansion of c axis in the substituted model, which is attributed to the reduced van der Waals interaction arising from the increased Se-Se bond length. Our calculations also predict that the electron transport properties can be enhanced by the Ti doping, especially for the Ti-intercalated 2H-NbSe2, which should be beneficial for the realization of superconductivity. Furthermore, the covalence element is found in the Ti-Se bonds, which is ascribed to the hybridization of Ti 3d and Se 4p orbitals. The findings indicate that doping of transition metals can be regarded as a useful way to tailor electronic states so as to improve electron transport properties of 2H-NbSe2.

Atomic scale imaging of competing polar states in a Ruddlesden–Popper layered oxide

DOE PAGES

Stone, Greg; Ophus, Colin; Birol, Turan; ...

2016-08-31

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), A n+1 B n O 3n+1 , thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Sr n+1 Ti n O 3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases.more » We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.« less

TiCN/TiNbCN multilayer coatings with enhanced mechanical properties

NASA Astrophysics Data System (ADS)

Caicedo, J. C.; Amaya, C.; Yate, L.; Gómez, M. E.; Zambrano, G.; Alvarado-Rivera, J.; Muñoz-Saldaña, J.; Prieto, P.

2010-08-01

Enhancement of mechanical properties by using a TiCN/TiNbCN multilayered system with different bilayer periods ( Λ) and bilayer numbers ( n) via magnetron sputtering technique was studied in this work. The coatings were characterized in terms of structural, chemical, morphological and mechanical properties by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and nanoindentation. Results of the X-ray analysis showed reflections associated to FCC (1 1 1) crystal structure for TiCN/TiNbCN films. AFM analysis revealed a reduction of grain size and roughness when the bilayer number is increased and the bilayer period is decreased. Finally, enhancement of mechanical properties was determined via nanoindentation measurements. The best behavior was obtained when the bilayer period ( Λ) was 15 nm ( n = 200), yielding the highest hardness (42 GPa) and elastic modulus (408 GPa). The values for the hardness and elastic modulus are 1.6 and 1.3 times greater than the coating with n = 1, respectively. The enhancement effects in multilayer coatings could be attributed to different mechanisms for layer formation with nanometric thickness due to the Hall-Petch effect; because this effect, originally used to explain the increase in hardness with decreasing grain size in bulk polycrystalline metals, has also been used to explain hardness enhancements in multilayers taking into account the thickness reduction at individual single layers that make the multilayered system. The Hall-Petch model based on dislocation motion within layers and across layer interfaces, has been successfully applied to multilayers to explain this hardness enhancement.

High-quality ZnO inverse opals and related heterostructures as photocatalysts produced by atomic layer deposition

NASA Astrophysics Data System (ADS)

Long, Jie; Fu, Ming; Li, Caixia; Sun, Cuifeng; He, Dawei; Wang, Yongsheng

2018-10-01

ZnO with various nanostructures is widely investigated for high photoelectrochemical (PEC) catalysis performances due to its abundant and inert semiconducting properties with elevated electronic mobility and variable morphologies. Because the solar energy conversion efficiencies could possibly be further enhanced by the introduction of nanophotonic structures with larger surface ratios, high-quality ZnO inverse opals (IOs) were achieved by ALD method using O3 as the oxidant. The intrinsic UV emission peaks and PEC currents of ZnO IOs produced by O3 atomic layer deposition (ALD) method were much improved when compared to those made by H2O ALD and electrodeposition. ALD at higher temperatures (240 °C) can further enhance the crystalline quality and PEC performances. The optimal ALD thickness and filling fraction obtained by controlling ALD cycles, as well as the optimal photonic stop band position obtained by colloidal crystals with different sphere diameters were also discussed. It was found that conformally coated samples with TiO2 protection layers by ALD method using titanium tetrachloride as a precursor enhanced the photochemical stability of ZnO IOs. The photocorrosion was further reduced by inserting ALD Al2O3 inside the TiO2 protection layers. Heterostructured photonic crystals with double-layer IO structures with different pore periodicities were also developed for enhancing the PEC performances.

Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells.

PubMed

Chandiran, Aravind Kumar; Tetreault, Nicolas; Humphry-Baker, Robin; Kessler, Florian; Baranoff, Etienne; Yi, Chenyi; Nazeeruddin, Mohammad Khaja; Grätzel, Michael

2012-08-08

Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga(2)O(3), the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO(2) conduction band and the hole injection into the electrolyte are characterized in detail.

Densities of Active species in N2/H2 RF and HF afterglows: application to surface nitriding of TiO2 nanocrystals

NASA Astrophysics Data System (ADS)

Ricard, André; Sarrette, Jean-Philippe; Wang, Yunfei; Kim, Yu-Kwon

2017-10-01

N2/0-5% H2 flowing afterglows from Radio Frequency (RF) and High Frequency (HF) sources have been analyzed by optical emission spectroscopy. In similar conditions (pressure 5-6 Torr, flow rate 0.5 slm and power 100 W), it is found in pure N2 a nearly constant N-atom density from the pink to the late afterglow, which is higher in HF than in RF: (1-2) and 0.4 × 1015 cm-3, respectively. With a N2/2% H2 gas mixture, the early afterglows is changed to a late afterglow with about the same N-atom density for both RF and HF cases: (8-9) × 1014 cm-3. Anatase TiO2 nanocrystals and Atomic Layer Deposition-grown films were exposed to the RF afterglows at room temperature. XPS analysis of the samples has shown that the highest N/Ti ratio of 0.24 can be achieved with the pure N2 late afterglow. In the HF pure N2 late afterglow, however, the N/Ti coverage was limited to 0.04 in spite of higher N-atom density. Such differences in the N content between the two RF and HF cases are attributed to the presence of a high O-atom impurity of 2 × 1013 cm-3 in HF as compared to that (8 × 1011 cm-3) in RF. Contribution to the topical issue "Plasma Sources and Plasma Processes (PSPP)", edited by Luis Lemos Alves, Thierry Belmonte and Tiberiu Minea

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

PubMed

Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J L; Zhong, Ruidan; Schneeloch, John A; Liu, Tiansheng; Valla, Tonica; Tranquada, John M; Gu, Genda; Davis, J C Séamus

2015-02-03

To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3

PubMed Central

Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J. L.; Zhong, Ruidan; Schneeloch, John A.; Liu, Tiansheng; Valla, Tonica; Tranquada, John M.; Gu, Genda; Davis, J. C. Séamus

2015-01-01

To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship Δ(r)∝n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm2. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential. PMID:25605947

Experimental and theoretical characterization of ordered MAX phases Mo{sub 2}TiAlC{sub 2} and Mo{sub 2}Ti{sub 2}AlC{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anasori, Babak; A.J. Drexel Nanomaterials Institute, Drexel University, Philadelphia, Pennsylvania 19104; Dahlqvist, Martin

2015-09-07

Herein, we report on the phase stabilities and crystal structures of two newly discovered ordered, quaternary MAX phases—Mo{sub 2}TiAlC{sub 2} and Mo{sub 2}Ti{sub 2}AlC{sub 3}—synthesized by mixing and heating different elemental powder mixtures of mMo:(3-m)Ti:1.1Al:2C with 1.5 ≤ m ≤ 2.2 and 2Mo: 2Ti:1.1Al:2.7C to 1600 °C for 4 h under Ar flow. In general, for m ≥ 2 an ordered 312 phase, (Mo{sub 2}Ti)AlC{sub 2}, was the majority phase; for m < 2, an ordered 413 phase (Mo{sub 2}Ti{sub 2})AlC{sub 3}, was the major product. The actual chemistries determined from X-ray photoelectron spectroscopy (XPS) are Mo{sub 2}TiAlC{sub 1.7} and Mo{sub 2}Ti{sub 1.9}Al{sub 0.9}C{sub 2.5}, respectively. High resolution scanning transmissionmore » microscopy, XPS and Rietveld analysis of powder X-ray diffraction confirmed the general ordered stacking sequence to be Mo-Ti-Mo-Al-Mo-Ti-Mo for Mo{sub 2}TiAlC{sub 2} and Mo-Ti-Ti-Mo-Al-Mo-Ti-Ti-Mo for Mo{sub 2}Ti{sub 2}AlC{sub 3}, with the carbon atoms occupying the octahedral sites between the transition metal layers. Consistent with the experimental results, the theoretical calculations clearly show that M layer ordering is mostly driven by the high penalty paid in energy by having the Mo atoms surrounded by C in a face-centered configuration, i.e., in the center of the M{sub n+1}X{sub n} blocks. At 331 GPa and 367 GPa, respectively, the Young's moduli of the ordered Mo{sub 2}TiAlC{sub 2} and Mo{sub 2}Ti{sub 2}AlC{sub 3} are predicted to be higher than those calculated for their ternary end members. Like most other MAX phases, because of the high density of states at the Fermi level, the resistivity measurement over 300 to 10 K for both phases showed metallic behavior.« less

Dimensional Effects on the Charge Density Waves in Ultrathin Films of TiSe 2

DOE PAGES

Chen, P.; Chan, Y. -H.; Wong, M. -H.; ...

2016-09-20

Charge density wave (CDW) formation in solids is a critical phenomenon involving the collective reorganization of the electrons and atoms in the system into a wave structure, and it is expected to be sensitive to the geometric constraint of the system at the nanoscale. Here, we study the CDW transition in TiSe 2, a quasi-two-dimensional layered material, to determine the effects of quantum confinement and changing dimensions in films ranging from a single layer to multilayers. Of key interest is the characteristic length scale for the transformation from a two-dimensional case to the three-dimensional limit. Angle-resolved photoemission (ARPES) measurements ofmore » films with thicknesses up to six layers reveal substantial variations in the energy structure of discrete quantum well states; however, the temperature-dependent band-gap renormalization converges at just three layers. The results indicate a layer-dependent mixture of two transition temperatures and a very-short-range CDW interaction within a three-dimensional framework.« less

Water reduction by a p-GaInP2 photoelectrode stabilized by an amorphous TiO2 coating and a molecular cobalt catalyst.

PubMed

Gu, Jing; Yan, Yong; Young, James L; Steirer, K Xerxes; Neale, Nathan R; Turner, John A

2016-04-01

Producing hydrogen through solar water splitting requires the coverage of large land areas. Abundant metal-based molecular catalysts offer scalability, but only if they match noble metal activities. We report on a highly active p-GaInP2 photocathode protected through a 35-nm TiO2 layer functionalized by a cobaloxime molecular catalyst (GaInP2-TiO2-cobaloxime). This photoelectrode mediates H2 production with a current density of ∼9 mA cm(-2) at a potential of 0 V versus RHE under 1-sun illumination at pH 13. The calculated turnover number for the catalyst during a 20-h period is 139,000, with an average turnover frequency of 1.9 s(-1). Bare GaInP2 shows a rapid current decay, whereas the GaInP2-TiO2-cobaloxime electrode shows ≤5% loss over 20 min, comparable to a GaInP2-TiO2-Pt catalyst particle-modified interface. The activity and corrosion resistance of the GaInP2-TiO2-cobaloxime photocathode in basic solution is made possible by an atomic layer-deposited TiO2 and an attached cobaloxime catalyst.

Metallic Interface at the Boundary Between Band and Mott Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kancharla, Srivenkateswara S; Dagotto, Elbio R

2006-01-01

Motivated by experiments on atomically smooth layers of LaTiO3, a Mott insulator, sandwiched between layers of SrTiO3, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the Lanczos method. Taking both the local and long-range Coulomb interactions into account, and computing the layer dependent local density of states, a metallic state was found at the interface whose extent strongly depends on the dielectric constant of the material. We also observed that the antiferromagnetic correlations in the bulk Mott phase persist into the metallic region. Our conclusions are in excellent agreement with recently reportedmore » results for this model in the opposite limit of infinite dimensions6,7, thus providing an alternative tool to study electronic reconstruction effects in heterostructures.« less

Evidence of extended cation solubility in atomic layer deposited nanocrystalline BaTiO3 thin films and its strong impact on the electrical properties.

PubMed

Falmbigl, Matthias; Karateev, Igor A; Golovina, Iryna S; Plokhikh, Aleksandr V; Parker, Thomas C; Vasiliev, Alexander L; Spanier, Jonathan E

2018-06-22

Thin films of ≈50 nm thickness with Ba/Ti-ratios ranging from 0.8 to 1.06 were prepared by depositing alternating layers of Ba(OH)2 and TiO2. Annealing at 750 °C promoted the solid-solid transformation into polycrystalline BaTiO3 films containing a mixture of the perovskite and the hexagonal polymorphs with average crystallite sizes smaller than 14 nm and without impurity phases. This, together with an increase of the cubic lattice parameters for Ba-rich films, suggests an extended metastable solubility range for the perovskite-phase in these nanocrystalline thin films on both sides of the stoichiometric composition. Mapping of the cation distribution utilizing energy-filtered transmission electron microscopy corroborates defect accommodation within the BaTiO3 grains. While the cation off-stoichiometry in thermodynamic equilibrium is negligible for BaTiO3, the metastable extended solubility range in the thin films can be directly correlated to the low annealing temperature and nanocrystalline nature. The leakage current behavior can be explained by the formation of Schottky defects for nonstoichiometric films, and the cation ratio has a distinct impact on the dielectric properties: while excess-BaO has a marginal detrimental effect on the permittivity, the dielectric constant declines rapidly by more than 50% towards the Ti-rich side. The present findings highlight the importance of compositional control for the synthesis of nanocrystalline BaTiO3 thin films, in particular for low annealing and/or deposition temperatures. Our synthesis approach using alternating layers of Ba(OH)2 and TiO2 provides a route to precisely control the cation stoichiometry.

Characterization of TiN/B-C-N multilayers by transmission electron microscopy, ion beam backscattering, and low angle x-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kung, H.; Fayeulle, S.; Nastasi, M.

1997-10-01

The effects of Ar ion irradiation on the structure and stability of multilayered DC sputtered thin films of TiN/B-C-N have been studied. An increase of the bilayer repeat length to a maximum of 12.8% and departure of nitrogen from the film was observed indicating the interdiffusion between TiN and B-C-N layers. For the highest dose (5 {times} 10{sup 16} ions/cm{sup 2}) the multilayered structure partly disappears. The various mechanisms are discussed in terms of stress-driven diffusion and viscous flow of atoms.

Comparison of Ti-Based Coatings on Silicon Nanowires for Phosphopeptide Enrichment and Their Laser Assisted Desorption/Ionization Mass Spectrometry Detection

PubMed Central

Kurylo, Ievgen; Hamdi, Abderrahmane; Addad, Ahmed; Coffinier, Yannick

2017-01-01

We created different TiO2-based coatings on silicon nanowires (SiNWs) by using either thermal metallization or atomic layer deposition (ALD). The fabricated surfaces were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and reflectivity measurements. Surfaces with different TiO2 based coating thicknesses were then used for phosphopeptide enrichment and subsequent detection by laser desorption/ionization mass spectrometry (LDI-MS). Results showed that the best enrichment and LDI-MS detection were obtained using the silicon nanowires covered with 10 nm of oxidized Ti deposited by means of thermal evaporation. This sample was also able to perform phosphopeptide enrichment and MS detection from serum. PMID:28914806

Effect of surface treatment and sterilization processes on the corrosion behavior of NiTi shape memory alloy.

PubMed

Thierry, B; Tabrizian, M; Trepanier, C; Savadogo, O; Yahia, L

2000-09-15

Nickel-titanium (NiTi) alloy derives its biocompatibility and good corrosion resistance from a homogeneous oxide layer mainly composed of TiO(2), with a very low concentration of nickel. In this article, we described the corrosion behavior of NiTi alloys after mechanical polishing, electropolishing, and sterilization processes using cyclic polarization and atomic absorption. As a preparative surface treatment, electropolishing decreased the amount of nickel on the surface and remarkably improved the corrosion behavior of the alloy by increasing the mean breakdown potential value and the reproducibility of the results (0.99 +/- 0.05 V/SCE vs. 0.53 +/- 0. 42). Ethylene oxide and Sterrad(R) sterilization techniques did not modify the corrosion resistance of electropolished NiTi, whereas a steam autoclave and, to a lesser extent, peracetic acid sterilization produced scattered breakdown potential. In comparing the corrosion resistance of common biomaterials, NiTi ranked between 316L stainless steel and Ti6A14V even after sterilization. Electropolished NiTi and 316L stainless-steel alloys released similar amounts of nickel after a few days of immersion in Hank's solution. Measurements by atomic absorption have shown that the amount of released nickel from passive dissolution was below the expected toxic level in the human body. Auger electron spectroscopy analyses indicated surface contamination by Ca and P on NiTi during immersion, but no significant modification in oxide thickness was observed.

Atomic-scale structural and electronic properties of SrTiO3/GaAs interfaces: A combined STEM-EELS and first-principles study

NASA Astrophysics Data System (ADS)

Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Klie, Robert F.; Öǧüt, Serdar

2017-07-01

The electronic properties of epitaxial oxide thin films grown on compound semiconductors are largely determined by the interfacial atomic structure, as well as the thermodynamic conditions during synthesis. Ferroelectric polarization and Fermi-level pinning in SrTiO3 films have been attributed to the presence of oxygen vacancies at the oxide/semiconductor interface. Here, we present scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy analyses of GaAs films grown on SrTiO3 combined with first-principles calculations to determine the atomic and electronic structures of the SrTiO3/GaAs interfaces. An atomically abrupt SrO/As interface is observed and the interfacial SrO layer is found to be O-deficient. First-principles density functional theory (DFT) calculations show SrO/Ga and Sr/As interfaces are favorable under O-rich and O-poor conditions, respectively. The SrO/Ga interface is reconstructed via the formation of Ga-Ga dimers while the Sr/As interface is abrupt and consistent with the experiment. DFT calculations further reveal that intrinsic two-dimensional electron gas (2DEG) forms in both SrO/Ga and Sr/As interfaces, and the Fermi level is pinned to the localized 2DEG states. Interfacial O vacancies can enhance the 2DEG density while it is possible for Ga/As vacancies to unpin the Fermi level from the 2DEG states.

Investigation of the Structural Stability of Ion-Implanted Gd 2Ti 2-xSn xO 7 Pyrochlore-Type Oxides by Glancing Angle X-ray Absorption Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aluri, Esther Rani; Hayes, John R.; Walker, James D.S.

2016-03-24

Rare-earth titanate and stannate pyrochlore-type oxides have been investigated in the past for the sequestration of nuclear waste elements because of their resistance to radiation-induced structural damage. In order to enhance this property, it is necessary to understand the effect of radioactive decay of the incorporated actinide elements on the local chemical environment. In this study, Gd 2Ti 2–xSn xO 7 materials have been implanted with Au– ions to simulate radiation-induced structural damage. Glancing angle X-ray absorption near-edge spectroscopy (GA-XANES), glancing angle X-ray absorption fine structure (GA-EXAFS) analysis, and powder X-ray diffraction have been used to investigate changes in themore » local coordination environment of the metal atoms in the damaged surface layer. Examination of GA-XANES/EXAFS spectra from the implanted Gd 2Ti 2–xSn xO 7 materials collected at various glancing angles allowed for an investigation of how the local coordination environment around the absorbing atoms changed at different depths in the damaged surface layer. This study has shown the usefulness of GA-XANES to the examination of ion-implanted materials and has suggested that Gd 2Ti 2–xSn xO 7 becomes more susceptible to ion-beam-induced structural damage with increasing Sn concentration.« less

Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

NASA Astrophysics Data System (ADS)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

2018-05-01

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE PAGES

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; ...

2018-05-07

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Incorporation of silver nanoparticles on the surface of orthodontic microimplants to achieve antimicrobial properties

PubMed Central

Venugopal, Adith; Muthuchamy, Nallal; Tejani, Harsh; Gopalan, Anantha-Iyengar; Lee, Kwang-Pill; Lee, Heon-Jin

2017-01-01

Objective Microbial aggregation around dental implants can lead to loss/loosening of the implants. This study was aimed at surface treating titanium microimplants with silver nanoparticles (AgNPs) to achieve antibacterial properties. Methods AgNP-modified titanium microimplants (Ti-nAg) were prepared using two methods. The first method involved coating the microimplants with regular AgNPs (Ti-AgNP) and the second involved coating them with a AgNP-coated biopolymer (Ti-BP-AgNP). The topologies, microstructures, and chemical compositions of the surfaces of the Ti-nAg were characterized by scanning electron microscopy (SEM) equipped with energy-dispersive spectrometer (EDS) and X-ray photoelectron spectroscopy (XPS). Disk diffusion tests using Streptococcus mutans, Streptococcus sanguinis, and Aggregatibacter actinomycetemcomitans were performed to test the antibacterial activity of the Ti-nAg microimplants. Results SEM revealed that only a meager amount of AgNPs was sparsely deposited on the Ti-AgNP surface with the first method, while a layer of AgNP-coated biopolymer extended along the Ti-BP-AgNP surface in the second method. The diameters of the coated nanoparticles were in the range of 10 to 30 nm. EDS revealed 1.05 atomic % of Ag on the surface of the Ti-AgNP and an astounding 21.2 atomic % on the surface of the Ti-BP-AgNP. XPS confirmed the metallic state of silver on the Ti-BP-AgNP surface. After 24 hours of incubation, clear zones of inhibition were seen around the Ti-BP-AgNP microimplants in all three test bacterial culture plates, whereas no antibacterial effect was observed with the Ti-AgNP microimplants. Conclusions Titanium microimplants modified with Ti-BP-AgNP exhibit excellent antibacterial properties, making them a promising implantable biomaterial. PMID:28127534

Magnetic Interactions at the Nanoscale in Trilayer Titanates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.

2016-02-17

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3/SrTiO3/YTiO3, in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3/SrTiO3 and SrTiO3/YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3/SrTiO3 and localized SrTiO3/YTiO3 electrons. Our results provide a route with prospects for exploringmore » new magnetic interfaces, designing a tunable two-dimensional d-electron Kondo lattice, and potential spin Hall applications.« less

Property of mono-vacancy in MAX phase M3AC2 (M=Ti, A=Al, Si, or Ge): First-principles calculations

NASA Astrophysics Data System (ADS)

Chen, L.; Duan, G.; Gao, X. F.; Wang, C. L.

2018-05-01

The formation and migration energies of the mono-vacancy in M3AC2 have been investigated using first-principles calculations. The results have shown that M element vacancy formation is the most energetically difficult in M3AC2. The A atomic layer is the most active one. It was also found that the energies of mono-vacancy formation and migration in Ti3AlC2 are higher than that in Ti3SiC2 and Ti3GeC2. Moreover, our calculation of the density of state confirms the conclusion that Ti3AlC2 is the most stable in the selected M3AC2 materials under high-temperature or irradiation environment conditions. These results could provide theoretical insights for the experimental results that Ti3AlC2 has a better radiation resistance than Ti3SiC2 and Ti3GeC2.

Pressure-induced reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure

NASA Astrophysics Data System (ADS)

Shen, Junying; Heuckeroth, Claire; Deng, Yuhang; He, Qinglin; Liu, Hong Chao; Liang, Jing; Wang, Jiannong; Sou, Iam Keong; Schilling, James S.; Lortz, Rolf

2017-12-01

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron-based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We interpret our data in the context of a pressure-induced enhanced coupling of the Fe1+yTe interfacial layer with the Bi2Te3 surface state, which modifies the electronic properties of the interface layer in a way that superconductivity emerges and becomes further enhanced under pressure. This demonstrates the important role of the TI in the interfacial superconducting mechanism.

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aslam, N.; Rodenbücher, C.; Szot, K.

2014-08-14

The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350 °C, and a subsequent annealing at 600 °C in nitrogen. Films of 15 nm and 12 nm thickness with three different compositions [Sr]/([Sr] + [Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100 μm{supmore » 2} to 0.01 μm{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01 μm{sup 2} size with a 12 nm polycrystalline stoichiometric STO film were switched at a current compliance of 50 μA with voltages of about ±1.0 V between resistance states of about 40 kΩ (LRS) and 1 MΩ (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr] + [Ti]) composition of the ALD STO thin films.« less

Vanadium impurity effects on optical properties of Ti3N2 mono-layer: An ab-initio study

NASA Astrophysics Data System (ADS)

Babaeipour, Manuchehr; Eslam, Farzaneh Ghafari; Boochani, Arash; Nezafat, Negin Beryani

2018-06-01

The present work is investigated the effect of vanadium impurity on electronic and optical properties of Ti3N2 monolayer by using density function theory (DFT) implemented in Wien2k code. In order to study optical properties in two polarization directions of photons, namely E||x and E||z, dielectric function, absorption coefficient, optical conductivity, refraction index, extinction index, reflectivity, and energy loss function of Ti3N2 and Ti3N2-V monolayer have been evaluated within GGA (PBE) approximation. Although, Ti3N2 monolayer is a good infrared reflector and can be used as an infrared mirror, introducing V atom in the infrared area will decrease optical conductivity because optical conductivity of a pure form of a material is higher than its doped form.

Effect of vertically oriented few-layer graphene on the wettability and interfacial reactions of the AgCuTi-SiO2f/SiO2 system.

PubMed

Sun, Z; Zhang, L X; Qi, J L; Zhang, Z H; Hao, T D; Feng, J C

2017-03-22

With the aim of expanding their applications, particularly when joining metals, a simple but effective method is reported whereby the surface chemical reactivity of SiO 2f /SiO 2 (SiO 2f /SiO 2 stands for silica fibre reinforced silica based composite materials and f is short for fibre) composites with vertically oriented few-layer graphene (VFG, 3-10 atomic layers of graphene vertically oriented to the substrate) can be tailored. VFG was uniformly grown on the surface of a SiO 2f /SiO 2 composite by using plasma enhanced chemical vapour deposition (PECVD). The wetting experiments were conducted by placing small pieces of AgCuTi alloy foil on SiO 2f /SiO 2 composites with and without VFG decoration. It was demonstrated that the contact angle dropped from 120° (without VFG decoration) to 50° (with VFG decoration) when the holding time was 10 min. The interfacial reaction layer in SiO 2f /SiO 2 composites with VFG decoration became continuous without any unfilled gaps compared with the composites without VFG decoration. High-resolution transmission electron microscopy (HRTEM) was employed to investigate the interaction between VFG and Ti from the AgCuTi alloy. The results showed that VFG possessed high chemical reactivity and could easily react with Ti even at room temperature. Finally, a mechanism of how VFG promoted the wetting of the SiO 2f /SiO 2 composite by the AgCuTi alloy is proposed and thoroughly discussed.

Strong metal support interaction of Pt on TiO2 grown by atomic layer deposition and physical vapor deposition for fuel cell applications

NASA Astrophysics Data System (ADS)

Hansen, Robin Paul

Several roadblocks prevent the large-scale commercialization of hydrogen fuel cells, including the stability of the Pt catalysts and their substrates, as well as the high cost of Pt. This is particularly true for the cathode, which requires a higher Pt loading because of the slow kinetics of the oxygen reduction reaction (ORR). The problem with the stability of the substrate can be solved by replacing the traditional carbon support with a conductive metal oxide such as reduced TiO2, which will not easily corrode and should result in longer lasting fuel cells. In this study, Pt was deposited either by atomic layer deposition (ALD) or physical vapor deposition (PVD). The typical size of the Pt islands that were grown using these deposition techniques was 3-8 nm. One factor that can inhibit the catalytic activity of a metal catalyst on a metal oxide is the strong metal support interaction (SMSI). This is where a metal on a reducible metal oxide can be encapsulated by a layer of the metal oxide support material at elevated temperatures. The processing of materials through atomic layer deposition can exceed this temperature. The TiO2 substrates used in this study were either grown by ALD, which results in a polycrystalline anatase film, or were single-crystal rutile TiO2(110) samples prepared in ultra-high vacuum (UHV). The Pt/TiO2 samples were tested electrochemically using cyclic voltammetry (CV) to determine the level of catalytic activity. To determine the effect of the SMSI interaction on the catalytic activity of the PVD grown samples, CV was performed on samples that were annealed in high vacuum after Pt deposition. Additional characterization was performed with scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), and four point probe analysis. Platinum that was deposited by PVD was used as a standard since it is not affected by the SMSI at the low temperature of the substrate during deposition. These samples were analyzed after deposition and then annealed to higher temperatures to induce the SMSI effect. The AR-XPS results for the single crystal TiO2 substrate show that there is an increase in the Ti emission at glancing exit angle after an anneal at 150 °C, which indicates the onset of the SMSI. For the ALD TiO2 substrate, the onset of SMSI was at 380 °C. This work is believed to be the first time in which the SMSI was observed in this fashion. The CV data for the samples with PVD Pt the single crystal TiO2 substrate showed a large reduction of the hydrogen adsortion at 380 °C. For the ORR, there was a reduction in the ORR signal at 380 °C. By 750 °C, the ORR was almost completely suppressed. For the PVD Pt grown on the ALD TiO2 substrates, there was a large increase in the resistivity of the samples after exposure to the acidic electrolyte used during the CV measurements. This resulted in no CV signal for those samples. Another aspect that was significantly different for the two different substrates was the Pt growth morphology. Both the AR-XPS and SEM measurements indicate that the Pt on the single crystal TiO2 substrates grows as distinct islands. For the ALD TiO2 substrates, the Pt islands had a lower profile than the islands grown on the single crystal substrates. This morphology difference is believed to be due to the large defect density of the ALD generated TiO2 or possibly from the different chemical properties of the anatase surface. These results indicate that the ALD generated substrates are more resistant to the effects of the SMSI, but that the ALD substrates are more sensitive to surface contamination.

Atomic and molecular layer deposition for surface modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi; Sievänen, Jenni; Salo, Erkki

2014-06-01

Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjetmore » printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.« less

Synthesis and structure determination of La{sub 8}Ti{sub 10}S{sub 24}O{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cario, L.; Deudon, C.; Meerschaut, A.

1998-02-15

The new compound La{sub 8}Ti{sub 10}S{sub 24}O{sub 4} has been prepared from a mixture of La{sub 2}Ti{sub 2}O{sub 7} and La{sub 2}O{sub 3} (in a 5:1 ratio) heated at 1,200 C under a H{sub 2}S gas flow. This new quaternary phase was obtained due to an incomplete sulfidizing process. Single-crystal X-ray diffraction studies show that La{sub 8}Ti{sub 10}S{sub 24}O{sub 4} crystallizes in space group P4/mmm, with Z = 1, in a cell of dimensions a = b = 10.421 {angstrom} and c = 8.384 {angstrom}. Least-squares refinement converged to values of R - 0.045 and R{sub w} = 0.048. Themore » structure can be viewed as a stacking of two types of layers along the {rvec c} axis. These layers are built up from infinite rutile-like chains (Ti octahedra) that cross perpendicularly. La atoms, in a tricapped prismatic coordination, are located in tunnels that develop parallel to the {rvec c} direction.« less

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

NASA Astrophysics Data System (ADS)

Wang, Lai-Guo; Zhang, Wei; Chen, Yan; Cao, Yan-Qiang; Li, Ai-Dong; Wu, Di

2017-01-01

In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOx device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.

Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique.

PubMed

Ghrairi, Najla; Bouaicha, Mongi

2012-07-01

In this work, we report the structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique. The TiO2 film was formed on a doped fluorine tin oxide (SnO2:F, i.e., FTO) layer and used as a photo electrode in a dye solar cell (DSC). Using spectroscopic ellipsometry measurements in the 200 to 800 nm wavelengths domain, we obtain a thickness of the TiO2 film in the range of 70 to 80 nm. Characterizations by X-ray diffraction and atomic force microscopy (AFM) show a polycrystalline film. In addition, AFM investigation shows no cracks in the formed layer. Using an ultraviolet-visible near-infrared spectrophotometer, we found that the transmittance of the TiO2 film in the visible domain reaches 75%. From the measured current-voltage or I-V characteristic under AM1.5 illumination of the formed DSC, we obtain an open circuit voltage Voc = 628 mV and a short circuit current Isc = 22.6 μA, where the surface of the formed cell is 3.14 cm2.

Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique

PubMed Central

2012-01-01

In this work, we report the structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique. The TiO2 film was formed on a doped fluorine tin oxide (SnO2:F, i.e., FTO) layer and used as a photo electrode in a dye solar cell (DSC). Using spectroscopic ellipsometry measurements in the 200 to 800 nm wavelengths domain, we obtain a thickness of the TiO2 film in the range of 70 to 80 nm. Characterizations by X-ray diffraction and atomic force microscopy (AFM) show a polycrystalline film. In addition, AFM investigation shows no cracks in the formed layer. Using an ultraviolet–visible near-infrared spectrophotometer, we found that the transmittance of the TiO2 film in the visible domain reaches 75%. From the measured current–voltage or I-V characteristic under AM1.5 illumination of the formed DSC, we obtain an open circuit voltage Voc = 628 mV and a short circuit current Isc = 22.6 μA, where the surface of the formed cell is 3.14 cm2. PMID:22747886

Highly uniform and vertically aligned SnO2 nanochannel arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Kim, Jae-Yup; Kang, Jin Soo; Shin, Junyoung; Kim, Jin; Han, Seung-Joo; Park, Jongwoo; Min, Yo-Sep; Ko, Min Jae; Sung, Yung-Eun

2015-04-01

Nanostructured electrodes with vertical alignment have been considered ideal structures for electron transport and interfacial contact with redox electrolytes in photovoltaic devices. Here, we report large-scale vertically aligned SnO2 nanochannel arrays with uniform structures, without lateral cracks fabricated by a modified anodic oxidation process. In the modified process, ultrasonication is utilized to avoid formation of partial compact layers and lateral cracks in the SnO2 nanochannel arrays. Building on this breakthrough, we first demonstrate the photovoltaic application of these vertically aligned SnO2 nanochannel arrays. These vertically aligned arrays were directly and successfully applied in quasi-solid state dye-sensitized solar cells (DSSCs) as photoanodes, yielding reasonable conversion efficiency under back-side illumination. In addition, a significantly short process time (330 s) for achieving the optimal thickness (7.0 μm) and direct utilization of the anodized electrodes enable a simple, rapid and low-cost fabrication process. Furthermore, a TiO2 shell layer was coated on the SnO2 nanochannel arrays by the atomic layer deposition (ALD) process for enhancement of dye-loading and prolonging the electron lifetime in the DSSC. Owing to the presence of the ALD TiO2 layer, the short-circuit photocurrent density (Jsc) and conversion efficiency were increased by 20% and 19%, respectively, compared to those of the DSSC without the ALD TiO2 layer. This study provides valuable insight into the development of efficient SnO2-based photoanodes for photovoltaic application by a simple and rapid fabrication process.Nanostructured electrodes with vertical alignment have been considered ideal structures for electron transport and interfacial contact with redox electrolytes in photovoltaic devices. Here, we report large-scale vertically aligned SnO2 nanochannel arrays with uniform structures, without lateral cracks fabricated by a modified anodic oxidation process. In the modified process, ultrasonication is utilized to avoid formation of partial compact layers and lateral cracks in the SnO2 nanochannel arrays. Building on this breakthrough, we first demonstrate the photovoltaic application of these vertically aligned SnO2 nanochannel arrays. These vertically aligned arrays were directly and successfully applied in quasi-solid state dye-sensitized solar cells (DSSCs) as photoanodes, yielding reasonable conversion efficiency under back-side illumination. In addition, a significantly short process time (330 s) for achieving the optimal thickness (7.0 μm) and direct utilization of the anodized electrodes enable a simple, rapid and low-cost fabrication process. Furthermore, a TiO2 shell layer was coated on the SnO2 nanochannel arrays by the atomic layer deposition (ALD) process for enhancement of dye-loading and prolonging the electron lifetime in the DSSC. Owing to the presence of the ALD TiO2 layer, the short-circuit photocurrent density (Jsc) and conversion efficiency were increased by 20% and 19%, respectively, compared to those of the DSSC without the ALD TiO2 layer. This study provides valuable insight into the development of efficient SnO2-based photoanodes for photovoltaic application by a simple and rapid fabrication process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00202h

Two-dimensional triangular lattice and its application to lithium-intercalated layered compounds

NASA Astrophysics Data System (ADS)

Decerqueira, R. O.

1982-08-01

Good rechargeable batteries are being searched for use in electric vehicles and in energy storage during off-peak consumption periods and from solar sources. The interest in lithium intercalation compounds has been recently enhanced by the search for such batteries. The process of intercalation of lithium in several transition metal dichalcogenides can provide an emf of several volts. The progress achieved in the last decade in the investigation of these intercalates has been facilitated by the availability of the dichalcogenides as single crystals and by their chemical stability. The transition-metal dichalcogenides and their Li-intercalates are studied, with emphasis on the Li/su xTa/sub yTi/sub l-y/S2 series. The interactions between the Li atoms and the applicability of a lattice gas model to the problem of ordering of these atoms is discussed. A formulation is presented of the cluster-variation aproximation to the lattice gas problem. The single-site and the nearest-neighbor triangle basic clusters are considered as models for Li/sub x TiS2. Also a theory is presented for the effects of a random distribution of different species of host atoms, as in Ta/sub y/Ti/sub l-y/S2.

Waterless TiO{sub 2} atomic layer deposition using titanium tetrachloride and titanium tetraisopropoxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Virginia R.; Cavanagh, Andrew S.; Abdulagatov, Aziz I.

2014-01-15

The surface chemistry for TiO{sub 2} atomic layer deposition (ALD) typically utilizes water or other oxidants that can oxidize underlying substrates such as magnetic disks or semiconductors. To avoid this oxidation, waterless or oxidant-free surface chemistry can be used that involves titanium halides and titanium alkoxides. In this study, waterless TiO{sub 2} ALD was accomplished using titanium tetrachloride (TiCl{sub 4}) and titanium tetraisopropoxide (TTIP). In situ transmission Fourier transform infrared (FTIR) studies were employed to study the surface species and the reactions during waterless TiO{sub 2} ALD. At low temperatures between 125 and 225  °C, the FTIR absorbance spectra revealed thatmore » the isopropoxide species remained on the surface after TTIP exposures. The TiCl{sub 4} exposures then removed the isopropoxide species and deposited additional titanium species. At high temperatures between 250 and 300  °C, the isopropoxide species were converted to hydroxyl species by β-hydride elimination. The observation of propene gaseous reaction product by quadrupole mass spectrometry (QMS) confirmed the β-hydride elimination reaction pathway. The TiCl{sub 4} exposures then easily reacted with the hydroxyl species. QMS studies also observed the 2-chloropropane and HCl gaseous reaction products and monitored the self-limiting nature of the TTIP reaction. Additional studies examined the waterless TiO{sub 2} ALD growth at low and high temperature. Quartz crystal microbalance measurements observed growth rates of ∼3 ng/cm{sup 2} at a low temperature of 150  °C. Much higher growth rates of ∼15 ng/cm{sup 2} were measured at a higher temperature of 250  °C under similar reaction conditions. X-ray reflectivity analysis measured a growth rate of 0.55 ± 0.05 Å/cycle at 250  °C. X-ray photoelectron depth-profile studies showed that the TiO{sub 2} films contained low Cl concentrations <1 at. %. This waterless TiO{sub 2} ALD process using TiCl{sub 4} and TTIP should be valuable to prevent substrate oxidation during TiO{sub 2} ALD on oxygen-sensitive substrates.« less

Hydrogen storage capacity on Ti-decorated porous graphene: First-principles investigation

NASA Astrophysics Data System (ADS)

Yuan, Lihua; Kang, Long; Chen, Yuhong; Wang, Daobin; Gong, Jijun; Wang, Chunni; Zhang, Meiling; Wu, Xiaojuan

2018-03-01

Hydrogen storage capacity on Titanium (Ti) decorated porous graphene (PG) has been investigated using density functional theory simulations with generalized gradient approximation method. The possible adsorption sites of Ti atom on PG and electronic properties of Ti-PG system are also discussed.The results show a Ti atom prefers to strongly adsorb on the center site above the C hexagon with the binding energy of 3.65 eV, and the polarization and the hybridization mechanisms both contribute to the Ti atom adsorption on PG. To avoid a tendency of clustering among Ti atoms, the single side of the PG unit cell should only contain one Ti atom. For the single side of PG, four H2 molecules can be adsorbed around Ti atom, and the adsorption mechanism of H2 molecules come from not only the polarization mechanism between Ti and H atoms but also the orbital hybridization among Ti atom, H2 molecules and C atoms. For the case of double sides of PG, eight H2 molecules can be adsorbed on Ti-decorated PG unit cell with the average adsorption energy of -0.457 eV, and the gravimetric hydrogen storage capacity is 6.11 wt.%. Furthermore, ab inito molecular-dynaics simulation result shows that six H2 molecules can be adsorbed on double sides of unit cell of Ti-PG system and the configuration of Ti-PG is very stable at 300 K and without external pressure, which indicates Ti-decorated PG could be considered as a potential hydrogen storage medium at ambient conditions.

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Cr x(Bi 0.1Sb 0.9) 2-xTe 3

DOE PAGES

Lee, Inhee; Kim, Chung Koo; Lee, Jinho; ...

2015-01-20

To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in themore » ferromagnetic TI Cr₀.₀₈(Bi₀.₁Sb₀.₉)₁.₉₂Te₃. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship Δ(r)∝n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm². In addition, these observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.« less

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Tribocorrosion Failure Mechanism of TiN/SiOx Duplex Coating Deposited on AISI304 Stainless Steel.

PubMed

Chen, Qiang; Xie, Zhiwen; Chen, Tian; Gong, Feng

2016-11-26

TiN/SiO x duplex coatings were synthesized on AISI304 stainless steel by plasma immersion ion implantation and deposition (PIIID) followed by radio frequency magnetron sputtering (RFMS). The microstructure and tribocorrosion failure behaviors of the duplex coatings were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, reciprocating-sliding tribometer, and electrochemical tests. The as-deposited duplex coating had a two-layered columnar growth structure consisting of face-centered cubic TiN and amorphous SiO x . Sliding tests showed that the TiN interlayer had good adhesion with the substrate, but the SiO x layer suffered from severe delamination failure. Friction force induced a number of micro-cracks in the coating, which provided channels for the diffusion of NaCl solution. The tribocorrosion test showed that the duplex coating exhibited a lower wear-performance in NaCl solution than in ambient atmosphere. Multi-scale chloride ion corrosion occurred simultaneously and substantially degraded the bonding strength of the columnar crystals or neighboring layers. Force-corrosion synergy damage eventually led to multi-degradation failure of the duplex coating. The presented results provide a comprehensive understanding of the tribocorrosion failure mechanism in coatings with duplex architecture.

Microfabricated Amorphous Silicon Nanopillars on an Ultrasmooth 500-nm-thick Titanium Adhesion Layer

DTIC Science & Technology

2012-09-01

After Ti deposition, the wafers were pretreated with 10 ml of liquid hexamethyldisilazane ( HMDS ) to promote adhesion by photoresist. The HMDS was...film with a high flux of Ti atoms and shows large grains and a rough surface. In figure 2b, some residue can be seen near the 1000-nm pillars on the...closely to the SEM image shown in appendix B, which has a measured angle near 51°. In the future, a more vertical sidewall is likely to be desired

Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

PubMed

Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan

2015-01-01

Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.

Two-dimensional limit of crystalline order in perovskite membrane films

PubMed Central

Hong, Seung Sae; Yu, Jung Ho; Lu, Di; Marshall, Ann F.; Hikita, Yasuyuki; Cui, Yi; Hwang, Harold Y.

2017-01-01

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO3 membrane lattice collapses below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. The transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices. PMID:29167822

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Groll, Nickolas R.; Klug, Jeffrey A.; Cao, Chaoyue; Altin, Serdar; Claus, Helmut; Becker, Nicholas G.; Zasadzinski, John F.; Pellin, Michael J.; Proslier, Thomas

2014-03-01

A tunneling spectroscopy study is presented of superconducting MoN and Nb0.8Ti0.2N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported Tc values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ˜10%) were obtained using an artificial tunnel barrier of Al2O3 on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 106 A/cm2 at T = 0.8Tc for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.

Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

PubMed

Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

2017-02-01

Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

Surface modification of acetaminophen particles by atomic layer deposition.

PubMed

Kääriäinen, Tommi O; Kemell, Marianna; Vehkamäki, Marko; Kääriäinen, Marja-Leena; Correia, Alexandra; Santos, Hélder A; Bimbo, Luis M; Hirvonen, Jouni; Hoppu, Pekka; George, Steven M; Cameron, David C; Ritala, Mikko; Leskelä, Markku

2017-06-15

Active pharmaceutical ingredients (APIs) are predominantly organic solid powders. Due to their bulk properties many APIs require processing to improve pharmaceutical formulation and manufacturing in the preparation for various drug dosage forms. Improved powder flow and protection of the APIs are often anticipated characteristics in pharmaceutical manufacturing. In this work, we have modified acetaminophen particles with atomic layer deposition (ALD) by conformal nanometer scale coatings in a one-step coating process. According to the results, ALD, utilizing common chemistries for Al 2 O 3 , TiO 2 and ZnO, is shown to be a promising coating method for solid pharmaceutical powders. Acetaminophen does not undergo degradation during the ALD coating process and maintains its stable polymorphic structure. Acetaminophen with nanometer scale ALD coatings shows slowed drug release. ALD TiO 2 coated acetaminophen particles show cytocompatibility whereas those coated with thicker ZnO coatings exhibit the most cytotoxicity among the ALD materials under study when assessed in vitro by their effect on intestinal Caco-2 cells. Copyright © 2017 Elsevier B.V. All rights reserved.

Two-dimensional limit of crystalline order in perovskite membrane films

DOE PAGES

Hong, Seung Sae; Yu, Jung Ho; Lu, Di; ...

2017-11-17

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO 3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO 3 membrane lattice collapsesmore » below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. Finally, the transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices.« less

Modification of Structure and Tribological Properties of the Surface Layer of Metal-Ceramic Composite under Electron Irradiation in the Plasmas of Inert Gases

NASA Astrophysics Data System (ADS)

Ovcharenko, V. E.; Ivanov, K. V.; Mohovikov, A. A.; Yu, B.; Xu, Yu; Zhong, L.

2018-01-01

Metal-ceramic composites are the main materials for high-load parts in tribomechanical systems. Modern approaches to extend the operation life of tribomechanical systems are based on increasing the strength and tribological properties of the surface layer having 100 to 200 microns in depth. The essential improvement of the properties occurs when high dispersed structure is formed in the surface layer using high-energy processing. As a result of the dispersed structure formation the more uniform distribution of elastic stresses takes place under mechanical or thermal action, the energy of stress concentrators emergence significantly increases and the probability of internal defects formation reduces. The promising method to form the dispersed structure in the surface layer is pulse electron irradiation in the plasmas of inert gases combining electron irradiation and ion bombardment in one process. The present work reports upon the effect of pulse electron irradiation in plasmas of different inert gases with different atomic mass and ionization energy on the structure and tribological properties of the surface layer of TiC/(Ni-Cr) metal-ceramic composite with the volume ratio of the component being 50:50. It is experimentally shown that high-dispersed heterophase structure with a fraction of nanosized particles is formed during the irradiation. Electron microscopy study reveals that refining of the initial coarse TiC particles occurs via their dissolution in the molten metal binder followed by the precipitation of secondary fine particles in the interparticle layers of the binder. The depth of modified layer and the fraction of nanosized particles increase when the atomic number of the plasma gas increases and ionization energy decreases. The wear resistance of metal-ceramic composite improves in accordance to the formation of nanocrystalline structure in the surface layer.

Precipitation Behavior During Aging in α Phase Titanium Supersaturated with Cu

NASA Astrophysics Data System (ADS)

Mitsuhara, Masatoshi; Masuda, Tomoya; Nishida, Minoru; Kunieda, Tomonori; Fujii, Hideki

2016-04-01

Age hardening of Ti-2.3 mass pct Cu (Ti-2.3Cu) at 673 K to 873 K (400 °C to 600 °C) after solution treatment at 1063 K (790 °C) was observed. The relationship between precipitates formed during aging and changes in hardness was investigated. During aging at 673 K (400 °C), the hardness increased rapidly up to 200 hours, and subsequently increased more slowly up to 1000 hours. At 873 K (600 °C), the hardness began to decrease immediately. Transmission electron microscopy showed that fine disk-shaped precipitates of 20 to 40 nm in diameter grew in the α phase. It is concluded that these precipitates interacted with dislocations and increased the hardness. At 873 K (600 °C), precipitates of 1 µm in length and Ti2Cu particles of 200 nm in length were observed. The decrease in hardness may have resulted from the precipitate formation decreasing the concentration of Cu in the α phase. Bright/dark contrast of the three atomic layers and small atomic shift of the hcp structure were observed in the atomic resolution imaging of the precipitates. This suggests that the precipitates are not just Cu-enriched zones and have structures with similar periodicity to the Ti2Cu phase, which is thermally stable at those aging temperatures.

Tea Polyphenol-Reduced Graphene Oxide Deposition on Titanium Surface Enhances Osteoblast Bioactivity.

PubMed

Liu, Mengting; Hao, Liying; Huang, Qian; Zhao, Dan; Li, Qianshun; Cai, Xiaoxiao

2018-05-01

Graphene, a novel carbon-based material, has been widely used as osteogenic agent for the potential effect on the promotion of osteoblast proliferation. Tea polyphenol-reduced graphene oxide (TPG) is a simple and environmental-friendly raw material to obtain graphene. In this study, TPG was deposited on the Ti substrate to promote the bone regeneration. We prepared a honeycomb-like structure by acid and alkali pretreatment and immobilized the TPG layer (Ti-TPG) on the surface via electrochemical deposition. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to identify the immobilization of TPG on the titanium (Ti) successfully. Furthermore, the biological response of the Ti-TPG surface to rat osteoblast was evaluated. We also studied the cell adhesion, proliferation and expression of ossification genes on the sample. The results revealed that Ti-TPG had an advantage over Ti alloys in modulating cellular activity and Ti-TPG may be a promising coating for biological materials.

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

NASA Astrophysics Data System (ADS)

Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

2000-09-01

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

Experimental verification of orbital engineering at the atomic scale: Charge transfer and symmetry breaking in nickelate heterostructures

NASA Astrophysics Data System (ADS)

Phillips, Patrick J.; Rui, Xue; Georgescu, Alexandru B.; Disa, Ankit S.; Longo, Paolo; Okunishi, Eiji; Walker, Fred; Ahn, Charles H.; Ismail-Beigi, Sohrab; Klie, Robert F.

2017-05-01

Epitaxial strain, layer confinement, and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties of complex metal oxides. Trivalent rare-earth (RE) nickelate R E NiO3 heterostructures have been shown to be exemplars since the orbital occupancy, degeneracy, and, consequently, electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness, and superlattice structure. One recent example is the tricomponent LaTiO3-LaNiO3-LaAlO3 superlattice which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first-principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO3 and LaNiO3 layers, resulting in a mixed Ni2 +/Ni3 + valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell within the LaNiO3 layers. We also show how Wannier-function-based electron counting provides a simple physical picture of the electron distribution that connects directly with formal valence charges. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches.

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

PubMed Central

Khan, Z. N.; Ahmed, S.; Ali, M.

2016-01-01

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential.

PubMed

Kong, Desheng; Dang, Wenhui; Cha, Judy J; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

Evidence for Bulk Ripplocations in Layered Solids

NASA Astrophysics Data System (ADS)

Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

2016-09-01

Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation-best described as an atomic scale ripple-was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain.

Nanoscale investigation of platinum nanoparticles on strontium titanium oxide grown via physical vapor deposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Christensen, Steven Thomas

This dissertation examines growth of platinum nanoparticles from vapor deposition on SrTiO3 using a characterization approach that combines imaging techniques and X-ray methods. The primary suite of characterization probes includes atomic force microscopy (AFM), grazing-incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), scanning electron microscopy (SEM), and X-ray absorption spectroscopy (XAS). The vapor deposition techniques include physical vapor deposition (PVD) by evaporation and atomic layer deposition (ALD). For the PVD platinum study, AFM/XRF showed ˜10 nm nanoparticles separated by an average of 100 nm. The combination of AFM, GISAXS, and XRF indicated that the nanoparticles observed with AFM were actually comprised of closely spaced, smaller nanoparticles. These conclusions were supported by high-resolution SEM. The unusual behavior of platinum nanoparticles to aggregate without coalescence or sintering was observed previously by other researchers using transmissision electron microscopy (TEM). Platinum nanoparticle growth was also investigated on SrTiO3 (001) single crystals using ALD to nucleate nanoparticles that subsequently grew and coalesced into granular films as the ALD progresses. The expected growth rate for the early stages of ALD showed a two-fold increase which was attributed to the platinum deposition occurring faster on the bare substrate. Once the nanoparticles had coalesced into a film, steady state ALD growth proceeded. The formation of nanoparticles was attributed to the atomic diffusion of platinum atoms on the surface in addition to direct growth from the ALD precursor gases. The platinum ALD nanoparticles were also studied on SrTiO3 nanocube powders. The SrTiO3 nanocubes average 60 nm on a side and the cube faces have a {001} orientation. The ALD proceeded in a similar fashion as on the single crystal substrates where the deposition rate was twice as fast as the steady state growth rate. The Pt nanoparticle size increased linearly starting at ˜0.7 nm for 1 ALD cycle to ˜3 nm for 5 ALD cycles. The platinum chemical state was also investigated using X-ray absorption spectroscopy. Platinum nanoparticles ˜1 nm or smaller tended to be oxidized. For larger nanoparticles, the platinum state systematically approached that of bulk platinum metal as the size (number of ALD cycles) increased. The platinum loading was exceptionally low, ˜10 -3 mg cm-2.

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Rational Design of Solution-Processed Ti-Fe-O Ternary Oxides for Efficient Planar CH3NH3PbI3 Perovskite Solar Cells with Suppressed Hysteresis.

PubMed

Li, Xin; Hao, Feng; Zhao, Xingyue; Yin, Xuewen; Yao, Zhibo; Guo, Ying; Shen, Heping; Lin, Hong

2017-10-11

Electron-extraction layer (EEL) plays a critical role in determining the charge extraction and the power conversion efficiencies of the organometal-halide perovskite solar cells (PSCs). In this work, Ti-Fe-O ternary oxides were first developed to work as an efficient EEL in planar PSC. Compared with the widely used TiO x and the pure FeO x , the ternary composites show superior properties in multiple aspects including the excellent stability of the precursor solution, good coverage on the substrates, outstanding electrical properties, and suitable energy levels. By varying the Fe content from 0 to 100% in the Ti-Fe-O composites, the conductivity of the resultant compact layer was markedly improved, confirmed by consistent results from the conductive atomic force microscopy and the linear sweep voltammetry measurements. Meanwhile, the compositional engineering tunes the energy level alignment of the Ti-Fe-O EEL/CH 3 NH 3 PbI 3 interface to a region that is favorable for obtaining excellent charge-extraction property. The combinational advantages of the Ti-Fe-O composites significantly improved the photovoltaic performance of the as-prepared solar cells. An increase of over 20% in the short-circuit current (J SC ) density has been achieved due to a modified EEL conductivity and energy alignment with the perovskite layer. The reduction in the surface recombination and enhancement of the charge collection efficiency also result in about 15% increase in the fill factor. Notably, the device also showed remarkably alleviated hysteresis behavior, revealing a prominently inhibited surface recombination.

In situ reaction mechanism studies on the Ti(NMe{sub 2}){sub 2}(O{sup i}Pr){sub 2}-D{sub 2}O and Ti(O{sup i}Pr){sub 3}[MeC(N{sup i}Pr){sub 2}]-D{sub 2}O atomic layer deposition processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomczak, Yoann, E-mail: yoann.tomczak@helsinki.fi; Knapas, Kjell; Leskelä, Markku

2014-01-15

Reaction mechanisms in the Ti(NMe{sub 2}){sub 2}(O{sup i}Pr){sub 2}-D{sub 2}O and Ti(O{sup i}Pr){sub 3}[MeC(N{sup i}Pr){sub 2}] [also written Ti(O{sup i}Pr){sub 3}(N{sup i}Pr-Me-amd)]-D{sub 2}O atomic layer deposition processes were studied in situ with quartz crystal microbalance (QCM) and quadrupole mass spectrometry (QMS) at 275 °C. For the Ti(NMe{sub 2}){sub 2}(O{sup i}Pr){sub 2}-D{sub 2}O process, both QCM and QMS results indicated adsorption of the Ti(NMe{sub 2}){sub 2}(O{sup i}Pr){sub 2} molecule through an exchange of at least one of its –NMe{sub 2} ligands with surface hydroxyl groups. Regarding the Ti(O{sup i}Pr){sub 3}(N{sup i}Pr-Me-amd)-D{sub 2}O process, a mismatch between the QCM and QMS results revealedmore » more complex reactions: the decomposition of the [MeC(N{sup i}Pr){sub 2}] [also written (N{sup i}Pr-Me-amd)] ligand is suggested by the shape of the QCM data and the intensity of the QMS signals belonging to fragments of the [MeC(N{sup i}Pr){sub 2}] [also written (N{sup i}Pr-Me-amd)] ligand. A simple calculation model associating the growth rate per cycle of a crystalline film and the surface area taken by the ligands remaining after saturation was also used to support the decomposition of the [MeC(N{sup i}Pr){sub 2}] [also written (N{sup i}Pr-Me-amd)] ligand. The observed high growth rate is incompatible with the whole [MeC(N{sup i}Pr){sub 2}] (also written [N{sup i}Pr-Me-amd)] ligand remaining on the surface.« less

Integrated TiN coated porous silicon supercapacitor with large capacitance per foot print

NASA Astrophysics Data System (ADS)

Grigoras, Kestutis; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika

2017-05-01

We have fabricated a micro-supercapacitor with porous silicon electrodes coated with TiN by atomic layer deposition technique. The coating provides an efficient surface passivation and high electrical conductivity of the electrodes, resulting in stable and almost ideal electrochemical double layer capacitor behavior with characteristics comparable to the best carbon based micro-supercapacitors. Stability of the supercapacitor is verified by performing 50 000 voltammetry cycles with high capacitance retention obtained. Silicon microfabrication techniques facilitate integration of both supercapacitor electrodes inside the silicon substrate and, in this work, such in-chip supercapacitor is demonstrated. This approach allows realization of very high capacitance per foot print area. The in-chip micro-supercapacitor can be integrated with energy harvesting elements and can be used in wearable and implantable microdevices.

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

NASA Astrophysics Data System (ADS)

Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

2017-11-01

The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

On stoichiometry and intermixing at the spinel/perovskite interface in CoFe2O4/BaTiO3 thin films.

PubMed

Tileli, Vasiliki; Duchamp, Martial; Axelsson, Anna-Karin; Valant, Matjaz; Dunin-Borkowski, Rafal E; Alford, Neil McN

2015-01-07

The performance of complex oxide heterostructures depends primarily on the interfacial coupling of the two component structures. This interface character inherently varies with the synthesis method and conditions used since even small composition variations can alter the electronic, ferroelectric, or magnetic functional properties of the system. The focus of this article is placed on the interface character of a pulsed laser deposited CoFe2O4/BaTiO3 thin film. Using a range of state-of-the-art transmission electron microscopy methodologies, the roles of substrate morphology, interface stoichiometry, and cation intermixing are determined on the atomic level. The results reveal a surprisingly uneven BaTiO3 substrate surface formed after the film deposition and Fe atom incorporation in the top few monolayers inside the unit cell of the BaTiO3 crystal. Towards the CoFe2O4 side, a disordered region extending several nanometers from the interface was revealed and both Ba and Ti from the substrate were found to diffuse into the spinel layer. The analysis also shows that within this somehow incompatible composite interface, a different phase is formed corresponding to the compound Ba2Fe3Ti5O15, which belongs to the ilmenite crystal structure of FeTiO3 type. The results suggest a chemical activity between these two oxides, which could lead to the synthesis of complex engineered interfaces.

Worm-like mesoporous TiO2 thin films templated using comb copolymer for dye-sensitized solar cells with polymer electrolyte

NASA Astrophysics Data System (ADS)

Lee, Jae Hun; Park, Cheol Hun; Jung, Jung Pyo; Kim, Jong Hak

2015-12-01

A comb copolymer consisting of hydrophobic poly(2-[3-(2H-benzotriazol-2-yl)-4-hydroxyphenyl] ethyl methacrylate) (PBEM) and hydrophilic poly(oxyethylene methacrylate) (POEM) is synthesized via one-pot free radical polymerization. The PBEM-POEM comb copolymer is used as an agent to direct the structure toward one consisting of worm-like mesoporous TiO2 (WM-TiO2) films. The selective, preferential interaction between the titania precursor and the hydrophilic POEM chains is responsible for the formation of a well-organized worm-like mesostructure. The morphology of the WM-TiO2 films is characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In particular, the effects of film thickness on the optical and electrochemical properties are systematically investigated. The introduction of the WM-TiO2 layer between the nanocrystalline TiO2 (NC-TiO2) layer and fluorine-doped tin oxide (FTO) glass results in increased transmittance of visible light due to an antireflective property, decreased interfacial resistance and suppressed charge recombination at the interfaces of NC-TiO2/FTO glass. As a result, the photovoltaic conversion efficiency of the dye-sensitized solar cell (DSSC) with a polymer electrolyte is improved from 5.3% to 6.6% at an optimum film thickness (310 nm). The obtained efficiency represents a higher efficiency for the N719-based DSSC with a solvent-free, polymer electrolyte.

Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes.

PubMed

Xiong, Guang; Elam, Jeffrey W; Feng, Hao; Han, Catherine Y; Wang, Hsien-Hau; Iton, Lennox E; Curtiss, Larry A; Pellin, Michael J; Kung, Mayfair; Kung, Harold; Stair, Peter C

2005-07-28

Anodic aluminum oxide (AAO) membranes were characterized by UV Raman and FT-IR spectroscopies before and after coating the entire surface (including the interior pore walls) of the AAO membranes by atomic layer deposition (ALD). UV Raman reveals the presence of aluminum oxalate in bulk AAO, both before and after ALD coating with Al2O3, because of acid anion incorporation during the anodization process used to produce AAO membranes. The aluminum oxalate in AAO exhibits remarkable thermal stability, not totally decomposing in air until exposed to a temperature >900 degrees C. ALD was used to cover the surface of AAO with either Al2O3 or TiO2. Uncoated AAO have FT-IR spectra with two separate types of OH stretches that can be assigned to isolated OH groups and hydrogen-bonded surface OH groups, respectively. In contrast, AAO surfaces coated by ALD with Al2O3 display a single, broad band of hydrogen-bonded OH groups. AAO substrates coated with TiO2 show a more complicated behavior. UV Raman results show that very thin TiO2 coatings (1 nm) are not stable upon annealing to 500 degrees C. In contrast, thicker coatings can totally cover the contaminated alumina surface and are stable at temperatures in excess of 500 degrees C.

The role of yttrium and titanium during the development of ODS ferritic steels obtained through the STARS route: TEM and XAS study

NASA Astrophysics Data System (ADS)

Ordás, Nerea; Gil, Emma; Cintins, Arturs; de Castro, Vanessa; Leguey, Teresa; Iturriza, Iñigo; Purans, Juris; Anspoks, Andris; Kuzmin, Alexei; Kalinko, Alexandr

2018-06-01

Oxide Dispersion Strengthened Ferritic Steels (ODS FS) are candidate materials for structural components in future fusion reactors. Their high strength and creep resistance at elevated temperatures and their good resistance to neutron radiation damage is obtained through extremely fine microstructures containing a high density of nanometric precipitates, generally yttrium and titanium oxides. This work shows transmission electron microscopy (TEM) and extended X-ray absorption fine structure (EXAFS) characterization of Fe-14Cr-2W-0.3Ti-0.24Y ODS FS obtained by the STARS route (Surface Treatment of gas Atomized powder followed by Reactive Synthesis), an alternative method to obtain ODS alloys that avoids the mechanical alloying to introduce Y2O3 powder particles. In this route, FS powders already containing Ti and Y, precursors of the nanometric oxides, are obtained by gas atomization. Then, a metastable Cr- and Fe-rich oxide layer is formed on the surface of the powder particles. During consolidation by HIP at elevated temperatures, and post-HIP heat treatments above the HIP temperature, this oxide layer at Prior Particle Boundaries (PPBs) dissociates, the oxygen diffuses, and Y-Ti-O nano-oxides precipitate in the ferritic matrix. TEM characterization combined with XAFS and XANES analyses have proven to be suitable tools to follow the evolution of the nature of the different oxides present in the material during the whole processing route and select appropriate HIP and post-HIP parameters to promote profuse and fine Y-Ti-O nanometric precipitates.

Fabrication of high aspect ratio TiO{sub 2} and Al{sub 2}O{sub 3} nanogratings by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shkondin, Evgeniy, E-mail: eves@fotonik.dtu.dk; Takayama, Osamu; Lavrinenko, Andrei V.

The authors report on the fabrication of TiO{sub 2} and Al{sub 2}O{sub 3} nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching followed by ALD of TiO{sub 2} or Al{sub 2}O{sub 3}. Then, the template was etched away using SF{sub 6} in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF{sub 6} plasma removes silicon selectively withoutmore » any observable influence on TiO{sub 2} or Al{sub 2}O{sub 3}, thus revealing high selectivity throughout the fabrication. Scanning electron microscopy was used to analyze every fabrication step. Due to nonreleased stress in the ALD coatings, the top parts of the gratings were observed to bend inward as the Si template was removed, thus resulting in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Ar{sup +} ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron spectroscopy. The approach presented opens the possibility to fabricate high quality optical metamaterials and functional nanostructures.« less

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Σ 3 (111 ) grain boundary of body-centered cubic Ti-Mo and Ti-V alloys: First-principles and model calculations

NASA Astrophysics Data System (ADS)

Yan, Jia-Yi; Ehteshami, Hossein; Korzhavyi, Pavel A.; Borgenstam, Annika

2017-07-01

The energetics and atomic structures of Σ 3 [1 1 ¯0 ] (111 ) grain boundary (GB) of body-centered cubic (bcc) Ti-Mo and Ti-V alloys are investigated using density-functional-theory calculations and virtual crystal approximation. The electron density in bcc structure and the atomic displacements and excess energy of the GB are correlated to bcc-ω phase stability. Model calculations based on pairwise interplanar interactions successfully reproduce the chemical part of GB energy. The chemical GB energy can be expressed as a sum of excess pairwise interactions between bcc (111) layers, which are obtained from Gaussian elimination of the total energies of a number of periodic structures. The energy associated with the relaxation near the GB is solved by numerical minimization using the derivatives of the excess interactions. Anharmonic interlayer interactions are necessary for obtaining accurate relaxation energy and excess GB volume from model calculations. The effect of GB on vibrational spectrum is also investigated. Segregation energies of B and Y to a substitutional site on the GB plane are calculated. Preliminary results suggest that Y tends to segregate, while B tends to antisegregate.

Atomic layer deposition of TiO2 on surface modified nanoporous low-k films.

PubMed

Levrau, Elisabeth; Devloo-Casier, Kilian; Dendooven, Jolien; Ludwig, Karl F; Verdonck, Patrick; Meersschaut, Johan; Baklanov, Mikhail R; Detavernier, Christophe

2013-10-01

This paper explores the effects of different plasma treatments on low dielectric constant (low-k) materials and the consequences for the growth behavior of atomic layer deposition (ALD) on these modified substrates. An O2 and a He/H2 plasma treatment were performed on SiCOH low-k films to modify their chemical surface groups. Transmission FTIR and water contact angle (WCA) analysis showed that the O2 plasma changed the hydrophobic surface completely into a hydrophilic surface, while the He/H2 plasma changed it only partially. In a next step, in situ X-ray fluorescence (XRF), ellipsometric porosimetry (EP), and Rutherford backscattering spectroscopy (RBS) were used to characterize ALD growth of TiO2 on these substrates. The initial growth of TiO2 was found to be inhibited in the original low-k film containing only Si-CH3 surface groups, while immediate growth was observed in the hydrophilic O2 plasma treated film. The latter film was uniformly filled with TiO2 after 8 ALD cycles, while pore filling was delayed to 17 ALD cycles in the hydrophobic film. For the He/H2 plasma treated film, containing both Si-OH and Si-CH3 groups, the in situ XRF data showed that TiO2 could no longer be deposited in the He/H2 plasma treated film after 8 ALD cycles, while EP measurements revealed a remaining porosity. This can be explained by the faster deposition of TiO2 in the hydrophilic top part of the film than in the hydrophobic bulk which leaves the bulk porous, as confirmed by RBS depth profiling. The outcome of this research is not only of interest for the development of advanced interconnects in ULSI technology, but also demonstrates that ALD combined with RBS analysis is a handy approach to analyze the modifications induced by a plasma treatment on a nanoporous thin film.

Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films

PubMed Central

Pintilie, Lucian; Ghica, Corneliu; Teodorescu, Cristian Mihail; Pintilie, Ioana; Chirila, Cristina; Pasuk, Iuliana; Trupina, Lucian; Hrib, Luminita; Boni, Andra Georgia; Georgiana Apostol, Nicoleta; Abramiuc, Laura Elena; Negrea, Raluca; Stefan, Mariana; Ghica, Daniela

2015-01-01

The compensation of the depolarization field in ferroelectric layers requires the presence of a suitable amount of charges able to follow any variation of the ferroelectric polarization. These can be free carriers or charged defects located in the ferroelectric material or free carriers coming from the electrodes. Here we show that a self-doping phenomenon occurs in epitaxial, tetragonal ferroelectric films of Pb(Zr0.2Ti0.8)O3, consisting in generation of point defects (vacancies) acting as donors/acceptors. These are introducing free carriers that partly compensate the depolarization field occurring in the film. It is found that the concentration of the free carriers introduced by self-doping increases with decreasing the thickness of the ferroelectric layer, reaching values of the order of 1026 m−3 for 10 nm thick films. One the other hand, microscopic investigations show that, for thicknesses higher than 50 nm, the 2O/(Ti+Zr+Pb) atomic ratio increases with the thickness of the layers. These results suggest that the ratio between the oxygen and cation vacancies varies with the thickness of the layer in such a way that the net free carrier density is sufficient to efficiently compensate the depolarization field and to preserve the outward direction of the polarization. PMID:26446442

Condensation and mixing in supernova ejecta

NASA Astrophysics Data System (ADS)

Fedkin, A. V.; Meyer, B. S.; Grossman, L.

2010-06-01

Low-density graphite spherules from the Murchison carbonaceous chondrite contain TiC grains and possess excess 28Si and 44Ca (from decay of short-lived 44Ti). These and other isotopic anomalies indicate that such grains formed by condensation from mixtures of ejecta from the interior of a core-collapse supernova with those from the exterior. Using homogenized chemical and isotopic model compositions of the eight main burning zones as end-members, Travaglio et al. (1999) attempted to find mixtures whose isotopic compositions match those observed in the graphite spherules, subject to the condition that the atomic C/O ratio = 1. They were partially successful, but this chemical condition does not guarantee condensation of TiC at a higher temperature than graphite, which is indicated by the spherule textures. In the present work, model compositions of relatively thin layers of ejecta within the main burning zones computed by Rauscher et al. (2002) for Type II supernovae of 15, 21 and 25 M ʘ are used to construct mixtures whose chemical compositions cause equilibrium condensation of TiC at a higher temperature than graphite in an attempt to match the textures and isotopic compositions of the spherules simultaneously. The variation of pressure with temperature and the change in elemental abundances with time due to radioactive decay were taken into account in the condensation calculations. Layers were found within the main Ni, O/Ne, He/C and He/N zones that, when mixed together, simultaneously match the carbon, nitrogen and oxygen isotopic compositions, 44Ti/ 48Ti ratios and inferred initial 26Al/ 27Al ratios of the low-density graphite spherules, even at subsolar 12C/ 13C ratios. Due to the relatively large proportion of material from the Ni zone and the relative amounts of the two layers of the Ni zone required to meet these conditions, predicted 28Si excesses are larger than observed in the low-density graphite spherules, and large negative δ46Ti/ 48Ti, δ47Ti/ 48Ti, δ49Ti/ 48Ti and δ50Ti/ 48Ti are produced, in contrast to the observed normal δ46Ti/ 48Ti and δ47Ti/ 48Ti, large positive δ49Ti/ 48Ti and smaller positive δ50Ti/ 48Ti. Although better matches to the observed δ46Ti/ 48Ti, δ47Ti/ 48Ti and 28Si excesses can be found using much smaller amounts of Ni zone material and some Si/S zone material, it is very difficult to match simultaneously the Ti and Si isotopic compositions in any mixtures of material from these deep layers with He/C and He/N zone material, regardless of the condensation sequence. The occurrence of Fe-rich, Si-poor metal grains inside the graphite spherules does not have a satisfactory explanation.

Fundamental Pathways for the Adsorption and Transport of Hydrogen on TiO2 Surfaces: Origin for Effective Sensing at about Room Temperature.

PubMed

Wang, Zhuo; Xia, Xiaohong; Guo, Meilan; Shao, Guosheng

2016-12-28

Effective detection of hydrogen at lowered temperature is highly desirable in promoting safety in using this abundant gas as a clean energy source. Through first-principle calculations in the framework of density functional theory, we find that the high-energy (002) surface for rutile TiO 2 is significantly more effective in adsorbing hydrogen atoms through dissociating hydrogen molecules. The pathways for the dissociation of hydrogen molecules and sequential migration of hydrogen atoms are identified through searching along various transitional states. Pathways of low potential barriers indicate promise for hydrogen sensing, even close to room temperature. This has been proven through sensors made of thin films of well-aligned rutile nanorods, wherein the high-energy (002) surface dictates the top surface of the active layer of the sensors.

Defect Effects on TiO2 Nanosheets: Stabilizing Single Atomic Site Au and Promoting Catalytic Properties.

PubMed

Wan, Jiawei; Chen, Wenxing; Jia, Chuanyi; Zheng, Lirong; Dong, Juncai; Zheng, Xusheng; Wang, Yu; Yan, Wensheng; Chen, Chen; Peng, Qing; Wang, Dingsheng; Li, Yadong

2018-03-01

Isolated single atomic site catalysts have attracted great interest due to their remarkable catalytic properties. Because of their high surface energy, single atoms are highly mobile and tend to form aggregate during synthetic and catalytic processes. Therefore, it is a significant challenge to fabricate isolated single atomic site catalysts with good stability. Herein, a gentle method to stabilize single atomic site metal by constructing defects on the surface of supports is presented. As a proof of concept, single atomic site Au supported on defective TiO 2 nanosheets is prepared and it is discovered that (1) the surface defects on TiO 2 nanosheets can effectively stabilize Au single atomic sites through forming the Ti-Au-Ti structure; and (2) the Ti-Au-Ti structure can also promote the catalytic properties through reducing the energy barrier and relieving the competitive adsorption on isolated Au atomic sites. It is believed that this work paves a way to design stable and active single atomic site catalysts on oxide supports. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces

NASA Astrophysics Data System (ADS)

Henegar, Alex J.

Device scaling has been key for creating faster and more powerful electronic devices. Integral circuit components like the metal-oxide semiconductor field-effect transistor (MOSFET) now rely on material deposition techniques, like atomic layer deposition (ALD), that possess atomic-scale thickness precision. At the heart of the archetypal MOSFET is a SiO2/Si interface which can be formed to near perfection. However when the thickness of the SiO 2 layer is shrunk down to a few nanometers several complications arise like unacceptably high leakage current and power consumption. Replacing Si with III-V semiconductors and SiO2 with high-k dielectric materials is appealing but comes with its own set of challenges. While SiO2 is practically defect-free, the native oxides of III-Vs are poor dielectrics. In this dissertation, the surface chemistry and interface evolution during the ALD of high-k metal oxides on Si(100), GaAs(100) and InAs(100) was studied. In particular, the surface chemistry and crystallization of TiO2 films grown on Si(100) was investigated using transmission Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Large, stable, and highly reactive anatase TiO2 grains were found to form during a post-deposition heat treatment after the ALD at 100 °C. The remainder of this work was focused on the evolution of the interfacial oxides during the deposition of TiO2 and Al2O3 on InAs(100) and GaAs(100) and during the deposition of Ta2O 5 on InAs(100). In summary the ALD precursor type, deposited film, and substrate had an influence in the evolution of the native oxides. Alkyl amine precursors fared better at removing the native oxides but the deposited films (TiO2 and Ta2O5) were susceptible to significant native oxide diffusion. The alkyl precursor used for the growth of Al 2O3 was relatively ineffective at removing the oxides but was a good diffusion barrier. In all cases the native oxides were more stable on GaAs compared to InAs. This project utilized a new methodology for the detection of arsenic oxide diffusion using transmission FTIR, and expanded the knowledge of the complexities of the high-k/III-V interface.

Characterization of titanyl phthalocyanine (TiOPc) thin films by microscopic and spectroscopic method

NASA Astrophysics Data System (ADS)

Skonieczny, R.; Makowiecki, J.; Bursa, B.; Krzykowski, A.; Szybowicz, M.

2018-02-01

The titanyl phthalocyanine (TiOPc) thin film deposited on glass, silicon and gold substrate have been studied using Raman spectroscopy, atomic force microscopy (AFM), absorption and profilometry measurements. The TiOPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The Raman spectra have been recorded using micro Raman system equipped with a confocal microscope. Using surface Raman mapping techni que with polarized Raman spectra the polymorphic forms of the TiOPc thin films distribution have been obtained. The AFM height and phase image were examined in order to find surface features and morphology of the thin films. Additionally to compare experimental results, structure optimization and vibrational spectra calculation of single TiOPc molecule were performed using DFT calculations. The received results showed that the parameters like polymorphic form, grain size, roughness of the surface in TiOPc thin films can well characterize the obtained organic thin films structures in terms of their use in optoelectronics and photovoltaics devices.

Effects of adsorbed pyridine derivatives and ultrathin atomic-layer-deposited alumina coatings on the conduction band-edge energy of TiO2 and on redox-shuttle-derived dark currents.

PubMed

Katz, Michael J; Vermeer, Michael J D; Farha, Omar K; Pellin, Michael J; Hupp, Joseph T

2013-01-15

Both the adsorption of t-butylpyridine and the atomic-layer deposition of ultrathin conformal coatings of insulators (such as alumina) are known to boost open-circuit photovoltages substantially for dye-sensitized solar cells. One attractive interpretation is that these modifiers significantly shift the conduction-edge energy of the electrode, thereby shifting the onset potential for dark current arising from the interception of injected electrons by solution-phase redox shuttle components such as Co(phenanthroline)(3)(3+) and triiodide. For standard, high-area, nanoporous photoelectrodes, band-edge energies are difficult to measure directly. In contrast, for flat electrodes they are readily accessible from Mott-Schottky analyses of impedance data. Using such electrodes (specifically TiO(2)), we find that neither organic nor inorganic electrode-surface modifiers shift the conduction-band-edge energy sufficiently to account fully for the beneficial effects on electrode behavior (i.e., the suppression of dark current). Additional experiments reveal that the efficacy of ultrathin coatings of Al(2)O(3) arises chiefly from the passivation of redox-catalytic surface states. In contrast, adsorbed t-butylpyridine appears to suppress dark currents mainly by physically blocking access of shuttle molecules to the electrode surface. Studies with other derivatives of pyridine, including sterically and/or electronically diverse derivatives, show that heterocycle adsorption and the concomitant suppression of dark current does not require the coordination of surface Ti(IV) or Al(III) atoms. Notably, the favorable (i.e., negative) shifts in onset potential for the flow of dark current engendered by organic and inorganic surface modifiers are additive. Furthermore, they appear to be largely insensitive to the identity of shuttle molecules.

Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

2016-12-01

Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

Displacement Threshold Energy and Recovery in an Al-Ti Nanolayered System with Intrinsic Point Defect Partitioning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerboth, Matthew D.; Setyawan, Wahyu; Henager, Charles H.

2014-01-07

A method is established and validated using molecular dynamics (MD) to determine the displacement threshold energies as Ed in nanolayered, multilayered systems of dissimilar metals. The method is applied to specifically oriented nanolayered films of Al-Ti where the crystal structure and interface orientations are varied in atomic models and Ed is calculated. Methods for defect detection are developed and discussed based on prior research in the literature and based on specific crystallographic directions available in the nanolayered systems. These are compared and contrasted to similar calculations in corresponding bulk materials, including fcc Al, fcc Ti, hcp Al, and hcp Ti.more » In all cases, the calculated Ed in the multilayers are intermediate to the corresponding bulk values but exhibit some important directionality. In the nanolayer, defect detection demonstrated systematic differences in the behavior of Ed in each layer. Importantly, collision cascade damage exhibits significant defect partitioning within the Al and Ti layers that is hypothesized to be an intrinsic property of dissimilar nanolayered systems. This type of partitioning could be partly responsible for observed asymmetric radiation damage responses in many multilayered systems. In addition, a pseudo-random direction was introduced to approximate the average Ed without performing numerous simulations with random directions.« less

Cryo-mediated exfoliation and fracturing of layered materials into 2D quantum dots

PubMed Central

Wang, Yan; Liu, Yang; Zhang, Jianfang; Wu, Jingjie; Xu, Hui; Wen, Xiewen; Zhang, Xiang; Tiwary, Chandra Sekhar; Yang, Wei; Vajtai, Robert; Zhang, Yong; Chopra, Nitin; Odeh, Ihab Nizar; Wu, Yucheng; Ajayan, Pulickel M.

2017-01-01

Atomically thin quantum dots from layered materials promise new science and applications, but their scalable synthesis and separation have been challenging. We demonstrate a universal approach for the preparation of quantum dots from a series of materials, such as graphite, MoS2, WS2, h-BN, TiS2, NbS2, Bi2Se3, MoTe2, Sb2Te3, etc., using a cryo-mediated liquid-phase exfoliation and fracturing process. The method relies on liquid nitrogen pretreatment of bulk layered materials before exfoliation and breakdown into atomically thin two-dimensional quantum dots of few-nanometer lateral dimensions, exhibiting size-confined optical properties. This process is efficient for a variety of common solvents with a wide range of surface tension parameters and eliminates the use of surfactants, resulting in pristine quantum dots without surfactant covering or chemical modification. PMID:29250597

The role of surface oxides on hydrogen sorption kinetics in titanium thin films

NASA Astrophysics Data System (ADS)

Hadjixenophontos, Efi; Michalek, Lukas; Roussel, Manuel; Hirscher, Michael; Schmitz, Guido

2018-05-01

Titanium is presently discussed as a catalyst to accelerate the hydrogenation kinetics of hydrogen storage materials. It is however known that H absorption in Ti decisively depends on the surface conditions (presence or absence of the natural surface oxide). In this work, we use Ti thin films of controlled thickness (50-800 nm) as a convenient tool for quantifying the atomic transport. XRD and TEM investigations allow us to follow the hydrogenation progress inside the film. Hydrogenation of TiO2/Ti bi-layers is studied at 300 °C, for different durations (10 s to 600 min) and at varying pressures of pure H2 atmosphere. Under these conditions, the hydrogenation is found to be linear in time. By comparing films with and without TiO2, as well as by studying the pressure dependence of hydrogenation, it is demonstrated that hydrogen transport across the oxide represents the decisive kinetic barrier rather than the splitting of H2 molecules at the surface. Hydrogenation appears by a layer-like reaction initiated by heterogeneous nucleation at the backside interface to the substrate. The linear growth constant and the H diffusion coefficient inside the oxide are quantified, as well as a reliable lower bound to the hydrogen diffusion coefficient in Ti is derived. The pressure dependence of hydrogen absorption is quantitatively modelled.

Mechanical properties of atomic layer deposition-reinforced nanoparticle thin films.

PubMed

Zhang, Lei; Prosser, Jacob H; Feng, Gang; Lee, Daeyeon

2012-10-21

Nanoparticle thin films (NTFs) exhibit multifunctionality, making them useful for numerous advanced applications including energy storage and conversion, biosensing and photonics. Poor mechanical reliability and durability of NTFs, however, limit their industrial and commercial applications. Atomic layer deposition (ALD) represents a unique opportunity to enhance the mechanical properties of NTFs at a relatively low temperature without drastically changing their original structure and functionality. In this work, we study how ALD of different materials, Al(2)O(3), TiO(2), and SiO(2), affects the mechanical properties of TiO(2) and SiO(2) NTFs. Our results demonstrate that the mechanical properties of ALD-reinforced NTFs are dominantly influenced by the mechanical properties of the ALD materials rather than by the compositional matching between ALD and nanoparticle materials. Among the three ALD materials, Al(2)O(3) ALD provides the best enhancement in the modulus and hardness of the NTFs. Interestingly, Al(2)O(3) ALD is able to enhance not only the modulus and hardness but also the toughness of NTFs. Our study presents an additional benefit of depositing nanometer scale ALD layers in NTFs; that is, we find that the hardness and modulus of ultrathin ALD layers (<5 nm) can be estimated from the mechanical properties of ALD-reinforced NTFs using a simple mixing rule. This investigation also provides insight into the use of nanoindentation for testing the mechanical properties of ultrathin ALD-reinforced NTFs.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All othermore » ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.« less

Improved irradiation tolerance of reactive gas pulse sputtered TiN coatings with a hybrid architecture of multilayered and compositionally graded structures

NASA Astrophysics Data System (ADS)

Liang, Wei; Yang, Jijun; Zhang, Feifei; Lu, Chenyang; Wang, Lumin; Liao, Jiali; Yang, Yuanyou; Liu, Ning

2018-04-01

This study investigates the improved irradiation tolerance of reactive gas pulse (RGP) sputtered TiN coatings which has hybrid architecture of multilayered and compositionally graded structures. The multilayered RGP-TiN coating is composed of hexagonal close-packed Ti phase and face-centred cubic TiN phase sublayers, where the former sublayer has a compositionally graded structure and the latter one maintains constant stoichiometric atomic ratio of Ti:N. After 100 keV He ion irradiation, the RGP-TiN coating exhibits improved irradiation resistance compared with its single layered (SL) counterpart. The size and density of He bubbles are smaller in the RGP-TiN coating than in the SL-TiN coating. The irradiation-induced surface blistering of the coatings shows a similar tendency. Meanwhile, the irradiation hardening and adhesion strength of the RGP-TiN coatings were not greatly affected by He irradiation. Moreover, the irradiation damage tolerance of the coatings can be well tuned by changing the undulation period number of N2 gas flow rate. Detailed analysis suggested that this improved irradiation tolerance could be related to the combined contribution of the multilayered and compositionally graded structures.

CO oxidation on Ru-Pt bimetallic nanoclusters supported on TiO2(101): The effect of charge polarization

NASA Astrophysics Data System (ADS)

Jia, Chuanyi; Zhong, Wenhui; Deng, Mingsen; Jiang, Jun

2018-03-01

Pt-based catalyst is widely used in CO oxidation, while its catalytic activity is often undermined because of the CO poisoning effect. Here, using density functional theory, we propose the use of a Ru-Pt bimetallic cluster supported on TiO2 for CO oxidation, to achieve both high activity and low CO poisoning effect. Excellent catalytic activity is obtained in a Ru1Pt7/TiO2(101) system, which is ascribed to strong electric fields induced by charge polarization between one Ru atom and its neighboring Pt atoms. Because of its lower electronegativity, the Ru atom donates electrons to neighboring Pt. This induces strong electric fields around the top-layered Ru, substantially promoting the adsorption of O2/CO + O2 and eliminating the CO poisoning effect. In addition, the charge polarization also drives the d-band center of the Ru1Pt7 cluster to up-shift to the Fermi level. For surface O2 activation/CO oxidation, the strong electric field and d-band center close to the Fermi level can promote the adsorption of O2 and CO as well as reduce the reaction barrier of the rate-determining step. Meanwhile, since O2 easily dissociates on Ru1Pt7/TiO2(101) resulting in unwanted oxidation of Ru and Pt, a CO-rich condition is necessary to protect the catalyst at high temperature.

Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

NASA Astrophysics Data System (ADS)

Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

2013-01-01

Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

Interfaces in Oxides Formed on NiAlCr Doped with Y, Hf, Ti, and B

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boll, Torben; Unocic, Kinga A.; Pint, Bruce A.

Abstract This study applies atom probe tomography (APT) to analyze the oxide scales formed on model NiAlCr alloys doped with Hf, Y, Ti, and B. Due to its ability to measure small amounts of alloying elements in the oxide matrix and its ability to quantify segregation, t he technique offers a possibility for detailed studies of the dopant’s fate during high-temperature oxidation. Three model NiAlCr alloys with different additions of Hf, Y, Ti, and B were prepared and oxidized in O 2at 1,100°C for 100 h. All specimens showed an outer region consisting of different spinel oxides with relativelymore » small grains and the protective Al 2O 3-oxide layer below. APT analyses focused mainly on this protective oxide layer. In all the investigated samples segregation of both Hf and Y to the oxide grain boundaries was observed and quantified. Neither B nor Ti were observed in the alumina grains or at the analyzed interfaces. The processes of formation of oxide scales and segregation of the alloying elements are discussed. The experimental challenges of the oxide analyses by APT are also addressed.« less

BaTiO3-based nanolayers and nanotubes: first-principles calculations.

PubMed

Evarestov, Robert A; Bandura, Andrei V; Kuruch, Dmitrii D

2013-01-30

The first-principles calculations using hybrid exchange-correlation functional and localized atomic basis set are performed for BaTiO(3) (BTO) nanolayers and nanotubes (NTs) with the structure optimization. Both the cubic and the ferroelectric BTO phases are used for the nanolayers and NTs modeling. It follows from the calculations that nanolayers of the different ferroelectric BTO phases have the practically identical surface energies and are more stable than nanolayers of the cubic phase. Thin nanosheets composed of three or more dense layers of (0 1 0) and (0 1 1[overline]) faces preserve the ferroelectric displacements inherent to the initial bulk phase. The structure and stability of BTO single-wall NTs depends on the original bulk crystal phase and a wall thickness. The majority of the considered NTs with the low formation and strain energies has the mirror plane perpendicular to the tube axis and therefore cannot exhibit ferroelectricity. The NTs folded from (0 1 1[overline]) layers may show antiferroelectric arrangement of Ti-O bonds. Comparison of stability of the BTO-based and SrTiO(3)-based NTs shows that the former are more stable than the latter. Copyright © 2012 Wiley Periodicals, Inc.

Interfaces in Oxides Formed on NiAlCr Doped with Y, Hf, Ti, and B

DOE PAGES

Boll, Torben; Unocic, Kinga A.; Pint, Bruce A.; ...

2017-03-20

Abstract This study applies atom probe tomography (APT) to analyze the oxide scales formed on model NiAlCr alloys doped with Hf, Y, Ti, and B. Due to its ability to measure small amounts of alloying elements in the oxide matrix and its ability to quantify segregation, t he technique offers a possibility for detailed studies of the dopant’s fate during high-temperature oxidation. Three model NiAlCr alloys with different additions of Hf, Y, Ti, and B were prepared and oxidized in O 2at 1,100°C for 100 h. All specimens showed an outer region consisting of different spinel oxides with relativelymore » small grains and the protective Al 2O 3-oxide layer below. APT analyses focused mainly on this protective oxide layer. In all the investigated samples segregation of both Hf and Y to the oxide grain boundaries was observed and quantified. Neither B nor Ti were observed in the alumina grains or at the analyzed interfaces. The processes of formation of oxide scales and segregation of the alloying elements are discussed. The experimental challenges of the oxide analyses by APT are also addressed.« less

Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

NASA Astrophysics Data System (ADS)

Abdulagatov, Aziz Ilmutdinovich

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately mixed TiO2 and nanographitized carbon. The graphitized carbon in the film was formed as a result of the removal of hydrogen by pyrolysis of the organic constituency of the MLD film. The presence of graphitic carbon allowed a 14 orders of magnitude increase in the electrical conductivity of the composite material compared fully oxidized rutile TiO 2.

Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

PubMed

Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

2013-08-20

To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti K_α 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

Atomically precise lateral modulation of a two-dimensional electron liquid in anatase TiO 2 thin films

DOE PAGES

Wang, Zhiming; Zhong, Z.; Walker, S. McKeown; ...

2017-03-10

Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO 2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated chemical surface doping we induce 2DELs with tunable carrier densities thatmore » are confined within a few TiO 2 layers below the surface. Subsequent in situ angle resolved photoemission experiments demonstrate that the (1 x 4) surface reconstruction provides a periodic lateral perturbation of the electron liquid. Furthermore, this causes strong backfolding of the electronic bands, opening of unidirectional gaps and a saddle point singularity in the density of states near the chemical potential.« less

Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

NASA Astrophysics Data System (ADS)

Ruffino, F.; Torrisi, V.

2017-11-01

Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Colon, Albert; Stan, Liliana; Divan, Ralu

Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approachmore » this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices.« less

Multifunctional Core-Shell and Nano-channel Design for Nano-sized Thermo-sensor

DTIC Science & Technology

2015-04-01

185 (2012) 172. 3. X. Sun, X. Ming, G. K. Wang, et al., “Atomic Layer Deposition of TiO2 on Graphene for Supercapacitors ”, Journal of the...Electrochemical Supercapacitors ”, Small (2012) 452. 5. H. T. Sun, M. P. Yu, G. K. Wang, X. Sun and J. Lian, “Temperature-Dependent Morphology Evolution and

Microporous Ti implant compact coated with hydroxyapatite produced by electro-discharge-sintering and electrostatic-spray-deposition.

PubMed

Jo, Y J; Kim, Y H; Jo, Y H; Seong, J G; Chang, S Y; Van Tyne, C J; Lee, W H

2014-11-01

A single pulse of 1.5 kJ/0.7 g of atomized spherical Ti powder from 300 μF capacitor was applied to produce the porous-surfaced Ti implant compact by electro-discharge-sintering (EDS). A solid core surrounded by porous layer was self-consolidated by a discharge in the middle of the compact in 122 μsec. Average pore size, porosity, and compressive yield strength of EDS Ti compact were estimated to be about 68.2 μm, 25.5%, and 266.4 MPa, respectively. Coatings with hydroxyapatite (HAp) on the Ti compact were conducted by electrostatic-spray-deposition (ESD) method. As-deposited HAp coating was in the form of porous structure and consisted of HAp particles which were uniformly distributed on the Ti porous structure. By heat-treatment at 700 degrees C, HAp particles were agglomerated each other and melted to form a highly smooth and homogeneous HAp thin film consisted of equiaxed nano-scaled grains. Porous-surfaced Ti implant compacts coated with highly crystalline apatite phase were successfully obtained by using the EDS and ESD techniques.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Frazzetto, Alessia; Giannazzo, Filippo; Lo Nigro, Raffaella; di Franco, Salvatore; Bongiorno, Corrado; Saggio, Mario; Zanetti, Edoardo; Raineri, Vito; Roccaforte, Fabrizio

2011-12-01

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM. The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results.

Synthesis of layered perovskite oxides, ACa[sub 2-x]La[sub x]Nb[sub 3-x]Ti[sub x]O[sub 10] (A = K, Rb, Cs), and characterization of new solid acids, HCa[sub 2-x]La[sub x]Nb[sub 3-x]Ti[sub x]O[sub 10] (O < x [le] 2), exhibiting variable Bronsted acidity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopalakrishnan, J.; Uma, S.; Bhat, V.

1993-01-01

Layered perovskite oxides of the formula ACa[sub 2-x]La[sub x]Nb[sub 3-x]Ti[sub x]O[sub 10] (A = K, Rb, Cs and 0 , x [le] 2) have been prepared. The members adopt the structures of the parent ACa[sub 2]Nb[sub 3]O[sub 10]. Interlayer alkali cations in the niobium-titanium oxide series can be ion-exchanged with Li[sup +], Na[sup +], NG[sub 4][sup +], of H[sup +] to give new derivatives. Intercalation of the protonated derivatives with organic bases reveals that the Bronsted acidity of the solid solution series, HCa[sub 2-x]La[sub x]Nb[sub 3-x]Ti[sub x]O[sub 10], depends on the titanium content. While the x = 1 member (HCaLaNb[submore » 2]TiO[sub 10]) is nearly as acidic as the parent HCa[sub 2]Nb[sub 3]O[sub 10], the x = 2 member (HLA[sub 2]NbTi[sub 2]O[sub 10]) is a weak acid hardly intercalating organic bases with pK[sub a] [approximately] 11.3. The variation of acidity is probably due to an ordering of Nb/Ti atoms in the triple octahedral perovskite slabs, [Ca[sub 2-x]La[sub x]Nb[sub 3-x]Ti[sub x]O[sub 10

Thin film growth into the ion track structures in polyimide by atomic layer deposition

NASA Astrophysics Data System (ADS)

Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

2017-09-01

High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

Photoelectron spectroscopy and density functional theory study of TiAlO(y) (-) (y=1-3) and TiAl(2)O(y) (-) (y=2-3) clusters.

PubMed

Zhang, Zeng-Guang; Xu, Hong-Guang; Zhao, Yuchao; Zheng, Weijun

2010-10-21

Small titanium-aluminum oxide clusters, TiAlO(y) (-) (y=1-3) and TiAl(2)O(y) (-) (y=2-3), were studied by using anion photoelectron spectroscopy. The adiabatic detachment energies of TiAlO(y) (-) (y=1-3) were estimated to be 1.11±0.05, 1.70±0.08, and 2.47±0.08eV based on their photoelectron spectra; those of TiAl(2)O(2) (-) and TiAl(2)O(3) (-) were estimated to be 1.17±0.08 and 2.2±0.1eV, respectively. The structures of these clusters were determined by comparison of density functional calculations with the experimental results. The structure of TiAlO(-) is nearly linear with the O atom in the middle. That of TiAlO(2) (-) is a kite-shaped structure. TiAlO(3) (-) has a kite-shaped TiAlO(2) unit with the third O atom attaching to the Ti atom. TiAl(2)O(2) (-) has two nearly degenerate Al-O-Ti-O-Al chain structures that can be considered as cis and trans forms. TiAl(2)O(3) (-) has two low-lying isomers, kite structure and book structure. The structures of these clusters indicate that the Ti atom tends to bind to more O atoms.

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

DTIC Science & Technology

2006-12-01

single layer Si0 2 with similar EOT [19]. In Fig. 2, the solid symbols represent the typical I-V characteristics of an AI/(HfON-Si3N4)/Si structure. The...black curve (with open symbols ) is a simulated I-V curve for theoretical Si0 2 with the same EOT. It can be seen clearly that it takes only 3 volts for...R. Wasser , B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO 2 thin films grown by atomic-layer deposition", J. App/. Phys., vol

Flexoelectricity in ATiO3 (A = Sr, Ba, Pb) perovskite oxide superlattices from density functional theory

NASA Astrophysics Data System (ADS)

Plymill, Austin; Xu, Haixuan

2018-04-01

Flexoelectric coefficients for several bulk and superlattice perovskite systems are determined using a direct approach from first principles density functional theory calculations. A strong enhancement in the longitudinal flexoelectric coefficient has been observed in the 1SrTiO3/1PbTiO3 superlattice with alternating single atomic layers of SrTiO3 and PbTiO3. It was found that atomistic displacement, charge response under strain, and interfaces affect the flexoelectric properties of perovskite superlattice systems. These factors can be used to tune this effect in dielectrics. It was further found that the calculated Born effective charge for an ion under the influence of strain can differ significantly from the bulk value. These insights can be used to help search for more effective flexoelectric materials to be implemented in electromechanical devices.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

NASA Astrophysics Data System (ADS)

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-12-01

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

PubMed Central

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-01-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

NASA Astrophysics Data System (ADS)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Stability of Titanium Nitride and Titanium Carbide When Exposed to Hydrogen Atoms from 298 to 1950 K

NASA Technical Reports Server (NTRS)

Philipp, Warren H.

1961-01-01

Titanium nitride and titanium carbide deposited on tungsten wires were exposed to hydrogen atoms (10(exp -4) atm pressure) produced by the action of microwave radiation on molecular hydrogen. The results of these experiments in the temperature range 298 to 1950 K indicate that no appreciable reaction takes place between atomic hydrogen and TiN or TiC. The formation of reaction products (NH3, CH4, C2H2) should be favored at lower temperatures. However, because of the high catalytic activity of Ti for H atom recombination, the rate of such reactions with H atoms is controlled by the rate of evaporation of Ti from the surface, this rate being low at temperatures below 1200 K. In order to interpret the stability of TiN and TiC in H atoms more fully, the stability of TiN and TiC in vacuum and H2 gas was also studied. The thermodynamic computations conform in order of magnitude to the experimentally found rates of decomposition of TiN and TiC in vacuum and are also consistent with the fact that no appreciable reaction is found with these compounds in molecular H2 at a pressure of 10(exp -3) atmosphere in the temperature range 2980 to 2060 K. When TiN or TiC was heated in atomic H or molecular H2, no reaction products other than those obtained from the simple decomposition of the nitride and carbide were observed. The gaseous products were analyzed in a mass spectrometer.

Enhanced photovoltaic performance of inverted hybrid bulk-heterojunction solar cells using TiO2/reduced graphene oxide films as electron transport layers

NASA Astrophysics Data System (ADS)

Morais, Andreia; Alves, João Paulo C.; Lima, Francisco Anderson S.; Lira-Cantu, Monica; Nogueira, Ana Flavia

2015-01-01

In this study, we investigated inverted hybrid bulk-heterojunction solar cells with the following configuration: fluorine-doped tin oxide (FTO) |TiO2/RGO|P3HT:PC61BM|V2O5 or PEDOT:PSS|Ag. The TiO2/GO dispersions were prepared by sol-gel method, employing titanium isopropoxide and graphene oxide (GO) as starting materials. The GO concentration was varied from 0.1 to 4.0 wt%. The corresponding dispersions were spin-coated onto FTO substrates and a thermal treatment was performed to remove organic materials and to reduce GO to reduced graphene oxide (RGO). The TiO2/RGO films were characterized by x-ray diffraction, Raman spectroscopy, and microscopy techniques. Atomic force microscopy (AFM) images showed that the addition of RGO significantly changes the morphology of the TiO2 films, with loss of uniformity and increase in surface roughness. Independent of the use of V2O5 or PEDOT: PSS films as the hole transport layer, the incorporation of 2.0 wt% of RGO into TiO2 films was the optimal concentration for the best organic photovoltaic performance. The solar cells based on TiO2/RGO (2.0 wt%) electrode exhibited a ˜22.3% and ˜28.9% short circuit current density (Jsc) and a power conversion efficiency enhancement, respectively, if compared with the devices based on pure TiO2 films. Kelvin probe force microscopy images suggest that the incorporation of RGO into TiO2 films can promote the appearance of regions with different charge dissipation capacities.

Optical properties of Na2O-TiO2-SiO2 glass films prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Barton, Ivo; Matejec, Vlastimil; Mrazek, Jan; Predoana, Luminita; Zaharescu, Maria

2017-12-01

Layers based on TiO2-SiO2 systems fabricated by sol-gel method have been investigated for the preparation of planar waveguides, antireflective coatings, Bragg mirrors, etc. However, at high titania contents such materials exhibit high viscosities and tendency to phase separation. In this paper we present optical properties of films containing TiO2 which are prepared via a novel approach sol-gel on the basis of ternary Na2O-TiO2-SiO2 glasses and which can exhibit lower viscosities. Films of Na2O-TiO2-SiO2 systems were prepared from input sols mixed of silica, titania and sodium oxide sols. The silica sol was prepared from tetraethyl orthosilicate (TEOS), ethanol, hydrochloric acid and water, with a TEOS c= 2 mol/l and water/alkoxide ratio 1.75. The titania sol was mixed from titanium tetraisopropoxide (TiPr), propan-2-ol, nitric acid and water, c= 0.5 mol/l, RW= 0.42. The sodium oxide sols with c= 0.474 mol/l were prepared from sodium ethoxide and ethanol. Input sols were prepared by mixing the silica and titania sols first and then the sodium sol was added. The input sols were aged for one hour. Stable input sols were obtained. The input sols were deposited on glass and silica slides by dip-coating technique at a withdrawing speeds of 200 mm/min. Applied gel layers were thermally treated at temperatures of 450 and 900°C. Layers containing sodium oxide and titania in concentration ranges of 0-20 mol.% and 0-30 mol.% respectively have been fabricated. Optical properties of layers were determined by UV-VIS-NIR transmission and reflection spectrophotometry. Refractive indices of layers were determined by spectral ellipsometry and from transmission spectra. Optical properties were correlated with results of XRD spectroscopy, optical microscopy, and atomic force microscopy. Transparent homogenous films with a maximum refractive index of 1.61 at a wavelength of 600 nm have been obtained.

Influence of Carbon interstitials to Ti1-xMexN (Me = Zr, Al, Cr) coatings by pulsed laser ablation on wear resistance

NASA Astrophysics Data System (ADS)

Jeon, Seol; Hong, Eunpyo; Kwon, Se-Hun; Lee, Heesoo

2018-06-01

The wear resistance of Ti1-xMexN (Me = Zr, Al, Cr) coatings by the laser carburization process was investigated in terms of local atomic structural changes. The repeated pulsed laser ablation was performed to the Ti1-xMexN coating surfaces after Graphite paste was covered. The friction coefficients of the coating specimens were decreased from ∼0.7 to 0.2, and the formation of cracks and debris was suppressed by implementing the laser ablation process. ToF-SIMS depth profiles showed that the laser carburization helps Carbon penetrate into the coating layer as deep as ∼20 nm below its surface. XPS and XAFS analyses revealed that the improvement of the wear resistance of the coatings was achieved not by formation of TiC or ZrC lattices on the coatings surfaces but by Carbon interstitials to the Ti1-xMexN lattices.

An investigation of Au/Ti multilayer thin-films: surface morphology, structure and interfacial/surface migration of constituents under applied thermal stress

NASA Astrophysics Data System (ADS)

Senevirathne, Indrajith; Kemble, Eric; Lavoie, John

2014-03-01

Multilayer thin films are ubiquitous in industry. Au/Ti/substrate is unique due to possible biological applications in proof of concept devices. Material used for substrates include borosilicate glass, and quartz. Typical Ti depositions on substrates give rise to Stanski-Krastonov (SK) like growth while Frank-van der Merwe (FM) like growth is preferred. Ti films with thickness of ~ 100nm were deposited onto varying substrates using a thermal evaporator. The additional Au layer is then deposited via magnetron sputter deposition at 100mtorr at low deposition rates (~ 1ML/min) onto the Ti thin film. These systems were annealed at varying temperatures and at different durations. Systems were investigated via AFM (Atomic Force Microscopy) probes to examine the surface morphology, and structure. Further, the ambient contamination and elemental distribution/diffusion at annealing was investigated via Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX). PASSHE FPDC Annual Grant (LOU # 2010-LHU-03)

Polarization-Dependent Raman Spectroscopy of Epitaxial TiO 2 (B) Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jokisaari, Jacob R.; Bayerl, Dylan; Zhang, Kui

2015-12-08

The bronze polymorph of titanium dioxide, known as TiO 2(B), has promising photochemical and electronic properties for potential applications in Li-ion batteries, photocatalysis, chemical sensing, and solar cells. In contrast to previous studies performed with powder samples, which often suffer from impurities and lattice water, here we report Raman spectra from highly crystalline TiO 2(B) films epitaxially grown on Si substrates with a thin SrTiO 3 buffer layer. The reduced background from the Si substrate significantly benefits acquisition of polarization-dependent Raman spectra collected from the high-quality thin films, which are compared to nanopowder results reported in the literature. The experimentalmore » spectra were compared with density functional theory calculations to analyze the atomic displacements associated with each Raman-active vibrational mode. These results provide a standard reference for further investigation of the crystallinity, structure, composition, and properties of TiO 2(B) materials with Raman spectroscopy.« less

Arginine Interactions with Anatase TiO2 (100) Surface and the Perturbation of 49Ti NMR Chemical Shifts - A DFT Investigation: Relevance to Renu-Seeram Bio Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koch, Rainer; Lipton, Andrew S.; Filipek, S.

2011-06-01

Density functional theoretical calculations have been utilized to investigate the interaction of the amino acid arginine with the (100) surface of anatase and the reproduction of experimentally measured 49Ti NMR chemical shifts of anatase. Significant binding of arginine through electrostatic interaction and hydrogen bonds of the arginine guanidinium protons to the TiO2 surface oxygen atoms is observed, allowing attachment of proteins to titania surfaces in the construction of bio-sensitized solar cells. GIAO-B3LYP/6-31G(d) NMR calculation of a three-layer model based on the experimental structure of this TiO2 modification gives an excellent reproduction of the experimental value (-927 ppm) within +/- 7more » ppm, however, the change in relative chemical shifts, EFGs and CSA suggest that the effect of the electrostatic arginine binding might be too small for experimental detection.« less

Forming free and ultralow-power erase operation in atomically crystal TiO2 resistive switching

NASA Astrophysics Data System (ADS)

Dai, Yawei; Bao, Wenzhong; Hu, Linfeng; Liu, Chunsen; Yan, Xiao; Chen, Lin; Sun, Qingqing; Ding, Shijin; Zhou, Peng; Zhang, David Wei

2017-06-01

Two-dimensional layered materials (2DLMs) have attracted broad interest from fundamental sciences to industrial applications. Their applications in memory devices have been demonstrated, yet much still remains to explore optimal materials and device structure for practical application. In this work, a forming-free, bipolar resistive switching behavior are demonstrated in 2D TiO2-based resistive random access memory (RRAM). Physical adsorption method is adopted to achieve high quality, continuous 2D TiO2 network efficiently. The 2D TiO2 RRAM devices exhibit superior properties such as fast switching capability (20 ns of erase operation) and extremely low erase energy consumption (0.16 fJ). Furthermore, the resistive switching mechanism is attributed to the formation and rupture of oxygen vacancies-based percolation path in 2D TiO2 crystals. Our results pave the way for the implementation of high performance 2DLMs-based RRAM in the next generation non-volatile memory (NVM) application.

Effect of microstructural evolution on mechanical and tribological properties of Ti-doped DLC films: How was an ultralow friction obtained?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Fei; Li, Hongxuan; Ji, Li

2016-05-15

This paper examined the evolution of microstructure and its effect on the mechanical and tribological properties of ultralow friction Ti-doped diamondlike carbon (DLC) films, by adjusting the CH{sub 4}/Ar ratio under constant radio frequency discharge power and bias. The Raman, high resolution transmission electron microscopy, atomic force microscope and nanoindentation measurements consistently reveal or indicate the formation of curved graphene sheets or fullerenelike nanostructures with increasing CH{sub 4}/Ar ratio. The superior frictional performance (0.008–0.01) of Ti-DLC films can be attributed to the special microstructure related to the development of embedded fullerenelike nanostructures as a result of incorporation of TiO{sub 2}more » clusters. The contributing factors include high hardness and cohesion, excellent toughness, high load-bearing capacity, as well as the ultralow shear resistance transform layer and the excellent antioxidation stability brought by the doped Ti.« less

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bueno, J., E-mail: j.bueno@sron.nl; Baselmans, J. J. A; Coumou, P. C. J. J.

We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggestmore » that an inhomogeneous state of these disordered superconductors should be used to explain these observations.« less

Changes in local surface structure and Sr depletion in Fe-implanted SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Yiu, Y. M.; Chen, N.; Sham, T. K.; Goncharova, L. V.

2017-01-01

Local surface structure of single crystal strontium titanate SrTiO3 (001) samples implanted with Fe in the range of concentrations between 2 × 1014 to 2 × 1016 Fe/cm2 at 30 keV has been investigated. In order to facilitate Fe substitution (doping), implanted samples were annealed in oxygen at 350 °C. Sr depletion was observed from the near-surface layers impacted by the ion-implantation process, as revealed by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray Absorption Near Edge Spectroscopy (XANES), and Atomic Force Microscopy (AFM). Hydrocarbon contaminations on the surface may contribute to the mechanisms of Sr depletion, which have important implications for Sr(Ti1-xFex)O3-δ materials in gas sensing applications.

Comparisons of multilayer H2O adsorption onto the (110) surfaces of alpha-TiO2 and SnO2 as calculated with density functional theory.

PubMed

Bandura, Andrei V; Kubicki, James D; Sofo, Jorge O

2008-09-18

Mono- and bilayer adsorption of H2O molecules on TiO2 and SnO 2 (110) surfaces has been investigated using static planewave density functional theory (PW DFT) simulations. Potential energies and structures were calculated for the associative, mixed, and dissociative adsorption states. The DOS of the bare and hydrated surfaces has been used for the analysis of the difference between the H2O interaction with TiO2 and SnO 2 surfaces. The important role of the bridging oxygen in the H2O dissociation process is discussed. The influence of the second layer of H2O molecules on relaxation of the surface atoms was estimated.

Local Real-Space View of the Achiral 1 T -TiSe2 2 ×2 ×2 Charge Density Wave

NASA Astrophysics Data System (ADS)

Hildebrand, B.; Jaouen, T.; Mottas, M.-L.; Monney, G.; Barreteau, C.; Giannini, E.; Bowler, D. R.; Aebi, P.

2018-03-01

The transition metal dichalcogenide 1 T -TiSe2 -two-dimensional layered material undergoing a commensurate 2 ×2 ×2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below ≈200 K . Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows us to go beyond the usual spatial resolution of STM and to intimately probe the three-dimensional character of the PLD. Furthermore, the inversion-symmetric achiral nature of the CDW in the z direction is revealed, contradicting the claimed existence of helical CDW stacking and associated chiral order. This study paves the way to a simultaneous real-space probing of both charge and structural reconstructions in CDW compounds.

Development and characterization of multilayer films of polyaniline, titanium dioxide and CTAB for potential antimicrobial applications.

PubMed

Farias, Emanuel Airton O; Dionisio, Natália A; Quelemes, Patrick V; Leal, Sergio Henrique; Matos, José Milton E; Silva Filho, Edson C; Bechtold, Ivan H; Leite, José Roberto S A; Eiras, Carla

2014-02-01

Composites prepared from polyaniline (PANI) and the ceramic technology of titanium dioxide (TiO2) have been proposed, however, the interaction of these materials with greater control of molecular arrangement becomes attractive in order to achieve properties not previously described or yet the optimization of those already reported. Therefore, in this study, thin hybrid films made of polyaniline (PANI), a conductive polymer, and the technological ceramic, titanium dioxide (TiO2), were prepared by the layer-by-layer (LbL) self-assembly technique. The films were characterized by cyclic voltammetry (CV), UV-VIS spectroscopy and atomic force microscopy (AFM). Aiming to improve the dispersion of the ceramic in the polymer matrix, the commercial surfactant, cetyl trimethylammonium bromide (CTAB), was used in the formation of the films. The best condition of deposition was found showing synergic interactions between the conjugated materials. The antibacterial activity of the PANI(TiO2)/CTAB films was studied and the obtained results suggest their use as antimicrobial coatings. Copyright © 2013 Elsevier B.V. All rights reserved.

A facile method for preparation superhydrophobic paper with enhanced physical strength and moisture-proofing property.

PubMed

Li, Hui; Yang, Jin; Li, Pan; Lan, Tianqing; Peng, Lincai

2017-03-15

We proposed a green and facile method to fabricate superhydrophobic paper in this study, which is layer-by-layer (LBL) deposition of TiO 2 nanoparticles/sodium alginate (ALG) multilayers on paper surface followed by an adsorption treatment of colloidal carnauba wax. The formation of TiO 2 /ALG multilayers on paper surface was characterized by X-ray photoelectron spectroscopy (XPS), zeta potential measurement, scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The wetting property of modified paper was investigated by water contact angle (WCA) measurement. Moreover, the modified paper tensile strength has been evaluated. The results showed that WCA of paper modified with a wax-treated (TiO 2 /ALG) 3.5 multilayer reached up to 151.5°, and this obtained superhydrophobic paper exhibited improved tensile strength (increased by 4.1% compared to the pristine paper), excellent moisture-proofing property and high strength stability under high relative humidity condition, which might has a great potential for use in the liquid paper packaging and moisture-proof paper packaging. Copyright © 2016 Elsevier Ltd. All rights reserved.

Fabrication of SrTiO3 Layer on Pt Electrode for Label-Free Capacitive Biosensors

PubMed Central

Carapella, Giovanni; Pilloton, Roberto; Di Matteo, Marisa

2018-01-01

Due to their interesting ferroelectric, conductive and dielectric properties, in recent years, perovskite-structured materials have begun to attract increasing interest in the biosensing field. In this study, a strontium titanate perovskite layer (SrTiO3) has been synthesized on a platinum electrode and exploited for the development of an impedimetric label-free immunosensor for Escherichia coli O157:H7 detection. The electrochemical characterization of the perovskite-modified electrode during the construction of the immunosensor, as well as after the interaction with different E. coli O157:H7 concentrations, showed a reproducible decrease of the total capacitance of the system that was used for the analytical characterization of the immunosensor. Under optimized conditions, the capacitive immunosensor showed a linear relationship from to 1 to 7 log cfu/mL with a low detection limit of 1 log cfu/mL. Moreover, the atomic force microscopy (AFM) technique underlined the increase in roughness of the SrTiO3-modified electrode surface after antibody immobilization, as well as the effective presence of cells with the typical size of E. coli. PMID:29547521

Capacitance-voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities.

PubMed

Kahouli, Abdelkader; Elbahri, Marwa Ben; Lebedev, Oleg; Lüders, Ulrike

2017-07-12

Advanced amorphous sub-nanometric laminates based on TiO 2 and Al 2 O 3 were deposited by atomic layer deposition at low temperature. Low densities of 'slow' and 'fast' interface states are achieved with values of 3.96 · 10 10 cm -2 and 4.85 · 10 -9 eV -1 cm -2 , respectively, by using a 40 nm laminate constituted of 0.7 nm TiO 2 and 0.8 nm Al 2 O 3 . The sub-nanometric laminate shows a low hysteresis width of 20 mV due to the low oxide charge density of about 3.72 · 10 11 cm -2 . Interestingly, such properties are required for stable and reliable performance of MOS capacitors and transistor operation. Thus, decreasing the individual layer thickness to the sub-nanometric range and combining two dielectric materials with oppositely charged defects may play a major role in the electrical response, highly promising for the application in future micro and nano-electronics applications.

Atom probe tomographic studies of precipitation in Al-0.1Zr-0.1Ti (at.%) alloys.

PubMed

Knipling, Keith E; Dunand, David C; Seidman, David N

2007-12-01

Atom probe tomography was utilized to measure directly the chemical compositions of Al(3)(Zr(1)-(x)Ti(x)) precipitates with a metastable L1(2) structure formed in Al-0.1Zr-0.1Ti (at.%) alloys upon aging at 375 degrees C or 425 degrees C. The alloys exhibit an inhomogeneous distribution of Al(3)(Zr(1)-(x)Ti(x)) precipitates, as a result of a nonuniform dendritic distribution of solute atoms after casting. At these aging temperatures, the Zr:Ti atomic ratio in the precipitates is about 10 and 5, respectively, indicating that Ti remains mainly in solid solution rather than partitioning to the Al(3)(Zr(1)-(x)Ti(x)) precipitates. This is interpreted as being due to the very small diffusivity of Ti in alpha-Al, consistent with prior studies on Al-Sc-Ti and Al-Sc-Zr alloys, where the slower diffusing Zr and Ti atoms make up a small fraction of the Al(3)(Zr(1)-(x)Ti(x)) precipitates. Unlike those alloys, however, the present Al-Zr-Ti alloys exhibit no interfacial segregation of Ti at the matrix/precipitate heterophase interface, a result that may be affected by a significant disparity in the evaporation fields of the alpha-Al matrix and Al(3)(Zr(1)-(x)Ti(x)) precipitates and/or a lack of local thermodynamic equilibrium at the interface.

The Preparation of Au@TiO2 Yolk-Shell Nanostructure and its Applications for Degradation and Detection of Methylene Blue

NASA Astrophysics Data System (ADS)

Wan, Gengping; Peng, Xiange; Zeng, Min; Yu, Lei; Wang, Kan; Li, Xinyue; Wang, Guizhen

2017-09-01

This paper reports the synthesis of a new type of Au@TiO2 yolk-shell nanostructures by integrating ion sputtering method with atomic layer deposition (ALD) technique and its applications as visible light-driven photocatalyst and surface-enhanced Raman spectroscopy (SERS) substrate. Both the size and amount of gold nanoparticles confined in TiO2 nanotubes could be facilely controlled via properly adjusting the sputtering time. The unique structure and morphology of the resulting Au@TiO2 samples were investigated by using various spectroscopic and microscopic techniques in detail. It is found that all tested samples can absorb visible light with a maximum absorption at localized surface plasmon resonance (LSPR) wavelengths (550-590 nm) which are determined by the size of gold nanoparticles. The Au@TiO2 yolk-shell composites were used as the photocatalyst for the degradation of methylene blue (MB). As compared with pure TiO2 nanotubes, Au@TiO2 composites exhibit improved photocatalytic properties towards the degradation of MB. The SERS effect of Au@TiO2 yolk-shell composites was also performed to investigate the detection sensitivity of MB.

The Preparation of Au@TiO2 Yolk-Shell Nanostructure and its Applications for Degradation and Detection of Methylene Blue.

PubMed

Wan, Gengping; Peng, Xiange; Zeng, Min; Yu, Lei; Wang, Kan; Li, Xinyue; Wang, Guizhen

2017-09-18

This paper reports the synthesis of a new type of Au@TiO 2 yolk-shell nanostructures by integrating ion sputtering method with atomic layer deposition (ALD) technique and its applications as visible light-driven photocatalyst and surface-enhanced Raman spectroscopy (SERS) substrate. Both the size and amount of gold nanoparticles confined in TiO 2 nanotubes could be facilely controlled via properly adjusting the sputtering time. The unique structure and morphology of the resulting Au@TiO 2 samples were investigated by using various spectroscopic and microscopic techniques in detail. It is found that all tested samples can absorb visible light with a maximum absorption at localized surface plasmon resonance (LSPR) wavelengths (550-590 nm) which are determined by the size of gold nanoparticles. The Au@TiO 2 yolk-shell composites were used as the photocatalyst for the degradation of methylene blue (MB). As compared with pure TiO 2 nanotubes, Au@TiO 2 composites exhibit improved photocatalytic properties towards the degradation of MB. The SERS effect of Au@TiO 2 yolk-shell composites was also performed to investigate the detection sensitivity of MB.

Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application

NASA Astrophysics Data System (ADS)

Motayed, A.; Davydov, A. V.; Boettinger, W. J.; Josell, D.; Shapiro, A. J.; Levin, I.; Zheleva, T.; Harris, G. L.

2005-05-01

Tungsten metal layer was used for the first time as an effective diffusion barrier for the standard Ti/Al/Ti/Au ohmic metallization scheme to obtain thermally stable ohmic contact suitable for high temperature applications. Comparative studies were performed on three distinct metallization schemes: 1) standard GaN/Ti/Al/Ti/Au, 2) GaN/Ti/Al/W/Au, and 3) GaN/Ti/Al/Ti/W/Au. For the GaN with doping level of 5 × 1017 cm-3, the lowest specific contact resistance for the Ti/Al/Ti/W/Au metallization scheme annealed in argon at 750 °C for 30 sec was 5 × 10-6 .cm2, which is comparable to the standard Ti/Al/Ti/Au scheme. X-ray diffractions (XRD), auger electron spectroscopy (AES) depth profiling, field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (TEM) revealed that the Ti/Al/Ti/W/Au metallization has superior morphology and microstructural properties compared to standard Ti/Al/Ti/Au metallizations. Remarkably, this metallization was able to withstand thermal aging at 500 °C for 50 hrs with only marginal morphological and electrical deterioration. These studies revealed that the utilization of a compound diffusion barrier stack, as in the Ti/Al/Ti/W/Au metallization, yields electrically, structurally, and morphologically superior metallizations with exceptional thermal stability.

Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface.

PubMed

Hwang, Suhwan; Larina, Liudmila; Lee, Hojin; Kim, Suncheul; Choi, Kyoung Soon; Jeon, Cheolho; Ahn, Byung Tae; Shin, Byungha

2018-06-20

We report a novel Cd-free ZnTiO buffer layer deposited by atomic layer deposition for Cu(In,Ga)Se 2 (CIGS) solar cells. Wet pretreatments of the CIGS absorbers with NH 4 OH, H 2 O, and/or aqueous solution of Cd 2+ ions were explored to improve the quality of the CIGS/ZnTiO interface, and their effects on the chemical state of the absorber and the final performance of Cd-free CIGS devices were investigated. X-ray photoelectron spectroscopy (XPS) analysis revealed that the aqueous solution etched away sodium compounds accumulated on the CIGS surface, which was found to be detrimental for solar cell operation. Wet treatment with NH 4 OH solution led to a reduced photocurrent, which was attributed to the thinning (or removal) of an ordered vacancy compound (OVC) layer on the CIGS surface as evidenced by an increased Cu XPS peak intensity after the NH 4 OH treatment. However, the addition of Cd 2+ ions to the NH 4 OH aqueous solution suppressed the etching of the OVC by NH 4 OH, explaining why such a negative effect of NH 4 OH is not present in the conventional chemical bath deposition of CdS. The band alignment at the CIGS/ZnTiO interface was quantified using XPS depth profile measurements. A small cliff-like conduction band offset of -0.11 eV was identified at the interface, which indicates room for further improvement of efficiency of the CIGS/ZnTiO solar cells once the band alignment is altered to a slight spike by inserting a passivation layer with a higher conduction band edge than ZnTiO. Combination of the small cliff conduction band offset at the interface, removal of the Na compound via water, and surface doping by Cd ions allowed the application of ZnTiO buffer to CIGS treated with Cd solutions, exhibiting an efficiency of 80% compared to that of a reference CIGS solar cell treated with the CdS.

Overcoming nanoscale friction barriers in transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Cammarata, Antonio; Polcar, Tomas

2017-08-01

We study the atomic contributions to the nanoscale friction in layered M X2 (M =Mo , W; X =S , Se, Te) transition metal dichalcogenides by combining ab initio techniques with group-theoretical analysis. Starting from stable atomic configurations, we propose a computational method, named normal-modes transition approximation (NMTA), to individuate possible sliding paths from only the analysis of the phonon modes of the stable geometry. The method provides a way to decompose the atomic displacements realizing the layer sliding in terms of phonon modes of the stable structure, so as to guide the selection and tuning of specific atomic motions promoting M X2 sheets gliding, and to adjust the corresponding energy barrier. The present results show that main contributions to the nanoscale friction are due to few low frequency phonon modes, corresponding to rigid shifts of M X2 layers. We also provide further evidences that a previously reported Ti-doped MoS2 phase is a promising candidate as new material with enhanced tribologic properties. The NMTA approach can be exploited to tune the energetic and the structural features of specific phonon modes, and, thanks to its general formulation, can also be applied to any solid state system, irrespective of the chemical composition and structural topology.

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samal, Nigamananda; Du Hui; Luberoff, Russell

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for themore » DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.« less

Effects of interfacial layer on characteristics of TiN/ZrO2 structures.

PubMed

Kim, Younsoo; Kang, Sang Yeol; Choi, Jae Hyoung; Lim, Jae Soon; Park, Min Young; Chung, Suk-Jin; Chung, Jaegwan; Lee, Hyung Ik; Kim, Ki Hong; Kyoung, Yong Koo; Heo, Sung; Yoo, Cha Young; Kang, Ho-Kyu

2011-09-01

To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TiN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TiN oxidation and a seed layer of ZrO2 growth.

Surface modification of NiTi by plasma based ion implantation for application in harsh environments

NASA Astrophysics Data System (ADS)

Oliveira, R. M.; Fernandes, B. B.; Carreri, F. C.; Gonçalves, J. A. N.; Ueda, M.; Silva, M. M. N. F.; Silva, M. M.; Pichon, L.; Camargo, E. N.; Otubo, J.

2012-12-01

The substitution of conventional components for NiTi in distinct devices such as actuators, valves, connectors, stents, orthodontic arc-wires, e.g., usually demands some kind of treatment to be performed on the surface of the alloy. A typical case is of biomaterials made of NiTi, in which the main drawback is the Ni out-diffusion, an issue that has been satisfactorily addressed by plasma based ion implantation (PBII). Even though PBII can tailor selective surface properties of diverse materials, usually, only thin modified layers are attained. When NiTi alloys are to be used in the harsh space environment, as is the case of devices designed to remotely release the solar panels and antenna arrays of satellites, e.g., superior mechanical and tribological properties are demanded. For this case the thickness of the modified layer must be larger than the one commonly achieved by conventional PBII. In this paper, new nitrogen PBII set up was used to treat samples of NiTi in moderate temperature of 450 °C, with negative voltage pulses of 7 kV/250 Hz/20 μs, in a process lasting 1 h. A rich nitrogen atomic concentration of 85 at.% was achieved on the near surface and nitrogen diffused at least for 11 μm depth. Tribological properties as well as corrosion resistance were evaluated.

Sustained release of melatonin from TiO2 nanotubes for modulating osteogenic differentiation of mesenchymal stem cells in vitro.

PubMed

Lai, Min; Jin, Ziyang; Tang, Qiang; Lu, Min

2017-10-01

To control the sustained release of melatonin and modulate the osteogenic differentiation of mesenchymal stem cells (MSCs), melatonin was firstly loaded onto TiO 2 nanotubes by direct dropping method, and then a multilayered film was coated by a spin-assisted layer-by-layer technique, which was composed of chitosan (Chi) and gelatin (Gel). Successful fabrication was characterized by field emission scanning electron microscopy, atomic force microscope, X-ray photoelectron spectroscopy and contact angle measurement, respectively. The efficient sustained release of melatonin was measured by UV-visible-spectrophotometer. After 2 days of culture, well-spread morphology was observed in MSCs grown on the Chi/Gel multilayer-coated melatonin-loaded TiO 2 nanotube substrates as compared to different groups. After 4, 7, 14 and 21 days of culture, the multilayered-coated melatonin-loaded TiO 2 nanotube substrates increased cell proliferation, increased alkaline phosphatase (ALP) and mineralization, increased expression of mRNA levels for runt-related transcription factor 2 (Runx2), ALP, osteopontin (OPN) and osteocalcin (OC), indicative of osteoblastic differentiation. These results demonstrated that Chi/Gel multilayer-coated melatonin-loaded TiO 2 nanotube substrates promoted cell adhesion, spreading, proliferation and differentiation and could provide an alternative fabrication method for titanium-based implants to enhance the osteointegration between bone tissues and implant surfaces.

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

DFT calculations for Au adsorption onto a reduced TiO2 (110) surface with the coexistence of Cl

NASA Astrophysics Data System (ADS)

Tada, Kohei; Sakata, Kohei; Yamada, Satoru; Okazaki, Kazuyuki; Kitagawa, Yasutaka; Kawakami, Takashi; Yamanaka, Shusuke; Okumura, Mitsutaka

2014-02-01

Residual chlorines, which originate from HAuCl4, enhance the aggregation of gold (Au) nanoparticles and clusters, preventing the generation of highly active supported Au catalysts. However, the detailed mechanism of residual-chlorine-promoted aggregation of Au is unknown. Herein to investigate this mechanism, density functional theory (DFT) calculations of Au and Cl adsorption onto a reduced rutile TiO2 (110) surface were performed using a generalised gradient approximation Perdew, Burke, and Ernzerhof formula (GGA-PBE) functional and plane-wave basis. Although both Au and Cl atoms prefer to mono-absorb onto oxygen defect sites, Cl atoms have a stronger absorption onto a reduced TiO2 (110) surface, abbreviated as rTiO2 (110) in the following, than Au atoms. Additionally, co-adsorption of a Cl atom and a Au atom or Au nanorod onto a rTiO2 surface was investigated; Cl adsorption onto an oxygen defect site weakens the interaction between a Au atom or Au nanorod and rTiO2 (110) surface. The calculation results suggest that the depletion of interaction between Au and rTiO2 surface is due to strong interaction between Cl atoms at oxygen defect sites and neighbouring bridging oxygen (OB) atoms.

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

NASA Astrophysics Data System (ADS)

Kim, Si Joon; Narayan, Dushyant; Lee, Jae-Gil; Mohan, Jaidah; Lee, Joy S.; Lee, Jaebeom; Kim, Harrison S.; Byun, Young-Chul; Lucero, Antonio T.; Young, Chadwin D.; Summerfelt, Scott R.; San, Tamer; Colombo, Luigi; Kim, Jiyoung

2017-12-01

We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (˜1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.

High Sensitivity Refractometer Based on TiO₂-Coated Adiabatic Tapered Optical Fiber via ALD Technology.

PubMed

Zhu, Shan; Pang, Fufei; Huang, Sujuan; Zou, Fang; Guo, Qiang; Wen, Jianxiang; Wang, Tingyun

2016-08-15

Atomic layer deposition (ALD) technology is introduced to fabricate a high sensitivity refractometer based on an adiabatic tapered optical fiber. Different thicknesses of titanium dioxide (TiO₂) nanofilm were coated around the tapered fiber precisely and uniformly under different deposition cycles. Attributed to the higher refractive index of the TiO₂ nanofilm compared to that of silica, an asymmetric Fabry-Perot (F-P) resonator could be constructed along the fiber taper. The central wavelength of the F-P resonator could be controlled by adjusting the thickness of the TiO₂ nanofilm. Such a F-P resonator is sensitive to changes in the surrounding refractive index (SRI), which is utilized to realize a high sensitivity refractometer. The refractometer developed by depositing 50.9-nm-thickness TiO₂ on the tapered fiber shows SRI sensitivity as high as 7096 nm/RIU in the SRI range of 1.3373-1.3500. Due to TiO₂'s advantages of high refractive index, lack of toxicity, and good biocompatibility, this refractometer is expected to have wide applications in the biochemical sensing field.

Enhanced photochemical catalysis of TiO2 inverse opals by modification with ZnO or Fe2O3 using ALD and the hydrothermal method

NASA Astrophysics Data System (ADS)

Liu, Jiatong; Sun, Cuifeng; Fu, Ming; Long, Jie; He, Dawei; Wang, Yongsheng

2018-02-01

The development of porous materials exhibiting photon regulation abilities for improved photoelectrochemical catalysis performance is always one of the important goals of solar energy harvesting. In this study, methods to improve the photocatalytic activity of TiO2 inverse opals were discussed. TiO2 inverse opals were prepared by atomic layer deposition (ALD) using colloidal crystal templates. In addition, TiO2 inverse opal heterostructures were fabricated using colloidal heterocrystals by repeated vertical deposition using different colloidal spheres. The hydrothermal method and ALD were used to prepare ZnO- or Fe2O3-modified TiO2 inverse opals on the internal surfaces of the TiO2 porous structures. Although the photonic reflection band was not significantly varied by oxide modification, the presence of Fe2O3 in the TiO2 inverse opals enhanced their visible absorption. The conformally modified oxides on the TiO2 inverse opals could also form energy barriers and avoid the recombination of electrons and holes. The fabrication of the TiO2 photonic crystal heterostructures and modification with ZnO or Fe2O3 can enhance the photocatalytic activity of TiO2 inverse opals.

NC-AFM observation of atomic scale structure of rutile-type TiO2(110) surface prepared by wet chemical process.

PubMed

Namai, Yoshimichi; Matsuoka, Osamu

2006-04-06

We succeeded in observing the atomic scale structure of a rutile-type TiO2(110) single-crystal surface prepared by the wet chemical method of chemical etching in an acid solution and surface annealing in air. Ultrahigh vacuum noncontact atomic force microscopy (UHV-NC-AFM) was used for observing the atomic scale structures of the surface. The UHV-NC-AFM measurements at 450 K, which is above a desorption temperature of molecularly adsorbed water on the TiO2(110) surface, enabled us to observe the atomic scale structure of the TiO2(110) surface prepared by the wet chemical method. In the UHV-NC-AFM measurements at room temperature (RT), however, the atomic scale structure of the TiO2(110) surface was not observed. The TiO2(110) surface may be covered with molecularly adsorbed water after the surface was prepared by the wet chemical method. The structure of the TiO2(110) surface that was prepared by the wet chemical method was consistent with the (1 x 1) bulk-terminated model of the TiO2(110) surface.

The role of titanium nitride supports for single-atom platinum-based catalysts in fuel cell technology.

PubMed

Zhang, Ren-Qin; Lee, Tae-Hun; Yu, Byung-Deok; Stampfl, Catherine; Soon, Aloysius

2012-12-28

As a first step towards a microscopic understanding of single-Pt atom-dispersed catalysts on non-conventional TiN supports, we present density-functional theory (DFT) calculations to investigate the adsorption properties of Pt atoms on the pristine TiN(100) surface, as well as the dominant influence of surface defects on the thermodynamic stability of platinized TiN. Optimized atomic geometries, energetics, and analysis of the electronic structure of the Pt/TiN system are reported for various surface coverages of Pt. We find that atomic Pt does not bind preferably to the clean TiN surface, but under typical PEM fuel cell operating conditions, i.e. strongly oxidizing conditions, TiN surface vacancies play a crucial role in anchoring the Pt atom for its catalytic function. Whilst considering the energetic stability of the Pt/TiN structures under varying N conditions, embedding Pt at the surface N-vacancy site is found to be the most favorable under N-lean conditions. Thus, the system of embedding Pt at the surface N-vacancy sites on TiN(100) surfaces could be promising catalysts for PEM fuel cells.

Hybrid SnO2/TiO2 Nanocomposites for Selective Detection of Ultra-Low Hydrogen Sulfide Concentrations in Complex Backgrounds

PubMed Central

Larin, Alexander; Womble, Phillip C.; Dobrokhotov, Vladimir

2016-01-01

In this paper, we present a chemiresistive metal oxide (MOX) sensor for detection of hydrogen sulfide. Compared to the previous reports, the overall sensor performance was improved in multiple characteristics, including: sensitivity, selectivity, stability, activation time, response time, recovery time, and activation temperature. The superior sensor performance was attributed to the utilization of hybrid SnO2/TiO2 oxides as interactive catalytic layers deposited using a magnetron radio frequency (RF) sputtering technique. The unique advantage of the RF sputtering for sensor fabrication is the ability to create ultra-thin films with precise control of geometry, morphology and chemical composition of the product of synthesis. Chemiresistive films down to several nanometers can be fabricated as sensing elements. The RF sputtering technique was found to be very robust for bilayer and multilayer oxide structure fabrication. The geometry, morphology, chemical composition and electronic structure of interactive layers were evaluated in relation to their gas sensing performance, using scanning electron microscopy (SEM), X-ray diffraction technique (XRD), atomic force microscopy (AFM), Energy Dispersive X-ray Spectroscopy (EDAX), UV visible spectroscopy, and Kelvin probe measurements. A sensor based on multilayer SnO2/TiO2 catalytic layer with 10% vol. content of TiO2 demonstrated the best gas sensing performance in all characteristics. Based on the pattern relating material’s characteristics to gas sensing performance, the optimization strategy for hydrogen sulfide sensor fabrication was suggested. PMID:27618900

Dynamical observation and detailed description of catalysts under strong metal–support interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuyi; Plessow, Philipp N.; Willis, Joshua J.

2016-06-09

Understanding the structures of catalysts under realistic conditions with atomic precision is crucial to design better materials for challenging transformations. Under reducing conditions, certain reducible supports migrate onto supported metallic particles and create strong metal–support states that drastically change the reactivity of the systems. The details of this process are still unclear and preclude its thorough exploitation. Here, we report an atomic description of a palladium/titania (Pd/TiO 2) system by combining state-of-the-art in situ transmission electron microscopy and density functional theory (DFT) calculations with structurally defined materials, in which we visualize the formation of the overlayers at the atomic scalemore » under atmospheric pressure and high temperature. We show that an amorphous reduced titania layer is formed at low temperatures, and that crystallization of the layer into either mono- or bilayer structures is dictated by the reaction environment and predicted by theory. Moreover, it occurs in combination with a dramatic reshaping of the metallic surface facets.« less

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Towards developing an efficient sensitive element for trinitrotoluene detection: TiO2 thin films functionalized with molecularly imprinted copolymer films

NASA Astrophysics Data System (ADS)

Lazau, Carmen; Iordache, Tanta-Verona; Florea, Ana-Mihaela; Orha, Corina; Bandas, Cornelia; Radu, Anita-Laura; Sarbu, Andrei; Rotariu, Traian

2016-10-01

In this study, TiO2 films were successfully grown in-situ onto a FTO substrate by a hydrothermal method, using TiCl4 as Ti precursor, and further on functionalized with a 2,4,6-trinitrotoluene-molecularly imprinted polymer (TNT-MIP) film as a preliminary step in developing a trinitrotoluene (TNT) reusable sensor to overcome the international security issues. For investigating the TiO2 film thickness, crystalline structure and morphology, the films were autoclaved at 200 °C at different times. The X-ray diffraction showed that TiO2 films possessed a rutile structure, with no cracks visible by atomic force microscopy (AFM), and the films morphology observed by scanning electron microscopy (SEM) was highly dependent upon the hydrothermal treatment time. Yet, the TiO2 films with a more porous surface were more suitable for TNT-MIP film deposit. Rheology of precursor polymer film solutions, based on poly (acrylonitrile-co-acrylic acid), poly (acrylonitrile-co-methacrylic acid) or poly (acrylonitrile- co-itaconic acid), and the structure and adherence of TNT-MIP films were investigated in order to establish the correct recipe of the MIP. The removal yield of TNT from the imprinted films, the thickness, the porosity and the compatibility with the inorganic TiO2 film were adequate for the poly (acrylonitrile-co-acrylic acid) system with an acrylonitrile: acrylic acid practical ratio of 86.1:13.9 (wt./wt.). Farmore, AFM morphology corroborated with SEM results highlighted the effect of TNT imprinting in the copolymer matrix as the surface of the imprinted layer was quite different from that of the non-imprinted layer.

Preparation of bone-implants by coating hydroxyapatite nanoparticles on self-formed titanium dioxide thin-layers on titanium metal surfaces.

PubMed

Wijesinghe, W P S L; Mantilaka, M M M G P G; Chathuranga Senarathna, K G; Herath, H M T U; Premachandra, T N; Ranasinghe, C S K; Rajapakse, R P V J; Rajapakse, R M G; Edirisinghe, Mohan; Mahalingam, S; Bandara, I M C C D; Singh, Sanjleena

2016-06-01

Preparation of hydroxyapatite coated custom-made metallic bone-implants is very important for the replacement of injured bones of the body. Furthermore, these bone-implants are more stable under the corrosive environment of the body and biocompatible than bone-implants made up of pure metals and metal alloys. Herein, we describe a novel, simple and low-cost technique to prepare biocompatible hydroxyapatite coated titanium metal (TiM) implants through growth of self-formed TiO2 thin-layer (SFTL) on TiM via a heat treatment process. SFTL acts as a surface binder of HA nanoparticles in order to produce HA coated implants. Colloidal HA nanorods prepared by a novel surfactant-assisted synthesis method, have been coated on SFTL via atomized spray pyrolysis (ASP) technique. The corrosion behavior of the bare and surface-modified TiM (SMTiM) in a simulated body fluid (SBF) medium is also studied. The highest corrosion rate is found to be for the bare TiM plate, but the corrosion rate has been reduced with the heat-treatment of TiM due to the formation of SFTL. The lowest corrosion rate is recorded for the implant prepared by heat treatment of TiM at 700 °C. The HA-coating further assists in the passivation of the TiM in the SBF medium. Both SMTiM and HA coated SMTiM are noncytotoxic against osteoblast-like (HOS) cells and are in high-bioactivity. The overall production process of bone-implant described in this paper is in high economic value. Copyright © 2016 Elsevier B.V. All rights reserved.

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N.

2015-07-28

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the appliedmore » voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)« less

Surface modification of TiO2 nanotubes with osteogenic growth peptide to enhance osteoblast differentiation.

PubMed

Lai, Min; Jin, Ziyang; Su, Zhiguo

2017-04-01

To investigate the influence of surface-biofunctionalized substrates on osteoblast behavior, a layer of aligned TiO 2 nanotubes with a diameter of around 70nm was fabricated on titanium surface by anodization, and then osteogenic growth peptide (OGP) was conjugated onto TiO 2 nanotubes through the intermediate layer of polydopamine. The morphology, composition and wettability of different surfaces were characterized by field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and contact angle measurements, respectively. The effects of OGP-modified TiO 2 nanotube substrates on the morphology, proliferation and differentiation of osteoblasts were examined in vitro. Immunofluorescence staining revealed that the OGP-functionalized TiO 2 nanotubes were favorable for cell spreading. However, there was no significant difference in cell proliferation observed among the different groups. Cells grown onto OGP-functionalized TiO 2 nanotubes showed significantly higher (p<0.05 or p<0.01) levels of alkaline phosphatase (ALP) and mineralization after 4, 7 and 14days of culture, respectively. Cells grown on OGP-functionalized TiO 2 nanotubes had significantly higher (p<0.05 or p<0.01) expression of osteogenic-related genes including runt related transcription factor 2 (Runx2), ALP, collagen type I (Col I), osteopontin (OPN) and osteocalcin (OC) after 14days of culture. These data suggest that surface functionalization of TiO 2 nanotubes with OGP was beneficial for cell spreading and differentiation. This study provides a novel platform for the development and fabrication of titanium-based implants that enhance the propensity for osseointegration between the native tissue and implant interface. Copyright © 2016 Elsevier B.V. All rights reserved.

Influence of TiO2(110) surface roughness on growth and stability of thin organic films.

PubMed

Szajna, K; Kratzer, M; Wrana, D; Mennucci, C; Jany, B R; Buatier de Mongeot, F; Teichert, C; Krok, F

2016-10-14

We have investigated the growth and stability of molecular ultra-thin films, consisting of rod-like semiconducting para-hexaphenyl (6P) molecules vapor deposited on ion beam modified TiO 2 (110) surfaces. The ion bombarded TiO 2 (110) surfaces served as growth templates exhibiting nm-scale anisotropic ripple patterns with controllable parameters, like ripple depth and length. In turn, by varying the ripple depth one can tailor the average local slope angle and the local step density/terrace width of the stepped surface. Here, we distinguish three types of substrates: shallow, medium, and deep rippled surfaces. On these substrates, 6P sub-monolayer deposition was carried out in ultra-high vacuum by organic molecular beam evaporation (OMBE) at room temperature leading to the formation of islands consisting of upright standing 6P molecules, which could be imaged by scanning electron microscopy and atomic force microscopy (AFM). It has been found that the local slope and terrace width of the TiO 2 template strongly influences the stability of OMBE deposited 6P islands formed on the differently rippled substrates. This effect is demonstrated by means of tapping mode AFM, where an oscillating tip was used as a probe for testing the stability of the organic structures. We conclude that by increasing the local slope of the TiO 2 (110) surface the bonding strength between the nearest neighbor standing molecules is weakened due to the presence of vertical displacement in the molecular layer in correspondence to the TiO 2 atomic step height.

Effect of TiN coating on microstructure of Tif/Al composite.

PubMed

Xiu, Z Y; Chen, G Q; Wang, M; Hussain, Murid

2013-02-01

In the present work, Ti fibre reinforced Al matrix composites (Ti(f)/Al) were fabricated by pressure infiltration method. In order to suppress the severe Ti-Al reaction and reduce the formation of brittle TiAl(3) phase, a TiN layer was coated on Ti fibres by an arc ion plating method before composite preparation. A thin TiN layer was coated on the Ti fibre surface, and the maximum and minimum thickness values of layer were about 3.5 and 1μm, respectively. Prefer orientation of TiN on (111) and (200) was found by XRD analysis. A thin and uniform TiAl(3) layer was observed in Ti(f)/Al composite. However, after coated with TiN layer, no significant reaction layer was found in (Ti(f)+TiN)/Al composite. Segregation of Mg element was found in Ti(f)/Al composite, and the presence of TiN layer showed little effect on this behaviour. Due to the large CTE difference between Ti fibre and Al matrix, high density dislocations were observed in the Al matrix. Meanwhile, fine dispersed Mg(2)Al(3) phases were also found in Al matrix. Ti fibre is mainly composed of α- and β-Ti. Small discontinuous needle-like TiAl(3) phases were detected at TiN/Al interface, which implies that the presence of TiN layer between the Ti fibre and Al matrix could effectively hinder the formation of TiAl(3) phases. Copyright © 2012 Elsevier Ltd. All rights reserved.

Structural investigations in helium charged titanium films using grazing incidence XRD and EXAFS spectroscopy

NASA Astrophysics Data System (ADS)

Wan, Chubin; Zhou, Xiaosong; Wang, Yuting; Li, Shina; Ju, Xin; Peng, Shuming

2014-01-01

The crystal structure and local atomic arrangements surrounding Ti atoms were determined for He-charged hexagonal close-packed (hcp) Ti films and measured at glancing angles by synchrotron radiation X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) spectroscopy, respectively. The charged specimens were prepared by direct current magnetron sputtering with a He/Ar mixture. He atoms with a relatively medium concentration (He/Ti atomic ratio as high as 17 at.%) were incorporated evenly in the deposited films. XRD results showed the changes in the peak intensities in Ti films with different He contents. EXAFS Fourier Transform analysis indicated that the average Ti-Ti distance decreased significantly, and proved the existence of phase transition.

Formation of 100-nm periodic structures on a titanium surface by exploiting the oxidation and third harmonic generation induced by femtosecond laser pulses.

PubMed

Li, Xian-Feng; Zhang, Cheng-Yun; Li, Hui; Dai, Qiao-Feng; Lan, Sheng; Tie, Shao-Long

2014-11-17

Periodic surface structures with periods as small as about one-tenth of the irradiating femtosecond (fs) laser light wavelength were created on the surface of a titanium (Ti) foil by exploiting laser-induced oxidation and third harmonic generation (THG). They were achieved by using 100-fs laser pulses with a repetition rate of 1 kHz and a wavelength ranging from 1.4 to 2.2 μm. It was revealed that an extremely thin TixOy layer was formed on the surface of the Ti foil after irradiating fs laser light with a fluence smaller than the ablation threshold of Ti, leading to a significant enhancement in THG which may exceed the ablation threshold of TixOy. As compared with Ti, the maximum efficacy factor for TixOy appears at a larger normalized wavevector in the direction perpendicular to the polarization of the fs laser light. As a result, the THG-dominated laser ablation of TixOy induces 100-nm periodic structures parallel to the polarization of the fs laser light. The depth of the periodic structures was found to be ~10 nm by atomic force microscopy and the formation of the thin TixOy layer was verified by energy dispersive X-ray spectroscopy.

Strain-induced phenomenon in complex oxide thin films

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan

Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of nonstoichiometry on ferroelectric properties are investigated, where enhanced ferroelectric responses are only found for stoichiometric films grown inside of the growth windows, whereas outside of the optimal growth window conditions, ferroelectric properties are greatly deteriorated and eventually disappear for highly nonstoichiometric film compositions. Utilizing these stoichiometric growth windows, high temperature polar phase transitions are discovered for compressively strained CaTiO3 films with transition temperatures in excess of 700 K, rendering this material as a strong candidate for high temperature electronic applications. Beyond the synthesis of single phase materials using hybrid MBE, a methodology is presented for constructing layered (SrTiO3)n/(CaTiO 3)n superlattice structures, where precise control over the unit cell layering thickness (n) is demonstrated using in-situ reflection high energy electron diffraction. The effects of interface roughness and layering periodicity (n) on the strain-induced ferroelectric properties for a series of n=1-10 (SrTiO3)n/(CaTiO3) n superlattice films are investigated. It is found that the stabilization of a ferroelectric phase is independent of n, but is however strongly dominated by the degree of interface roughness which is quantified by measuring the highest nth order X-ray diffraction peak splitting of each superlattice film. A counter-intuitive realization is made whereby a critical amount of interface roughness is required in order to enable the formation of the predicted strain-stabilized ferroelectric phase, whereas sharp interfaces actually suppress this ferroelectric phase from manifesting. It is shown how high-quality complex oxide superlattices can be constructed using hybrid MBE technique, allowing the ability to control layered materials at the atomic scale. Furthermore, a detailed growth methodology is provided for constructing a layered n=4 SrO(SrTiO3)n Ruddlesden-Popper (RP) phase by hybrid MBE, where the ability to deposit single monolayers of SrO and TiO2 is utilized to build the RP film structure over a time period of 5 hours. This is the first time that a thin film RP phase has been grown using hybrid MBE, where an a stable control over the fluxes is demonstrated during relatively long time periods of growth, which advantageously facilitates the synthesis of high-quality RP materials with excellent structural and chemical homogeneity. Additionally, this work demonstrates some major advancements in optical second harmonic generation (SHG) characterization techniques of ferroelectric thin film materials. The SHG characterization techniques developed here proved to be the 'bread-and-butter' for most of the work performed in this thesis, providing a powerful tool for identifying the existence of strain-induced ferroelectric phases, including their temperature dependence and polar symmetry. The work presented in this dissertation will hopefully provide a preliminary road map for future hybrid MBE growers, scientists and researchers, to develop and investigate epitaxial strain and heterostructure layering induced phenomena in other complex oxide systems.

Tunable growth of TiO2 nanostructures on Ti substrates

NASA Astrophysics Data System (ADS)

Peng, Xinsheng; Wang, Jingpeng; Thomas, Dan F.; Chen, Aicheng

2005-10-01

A simple and facile method is described to directly synthesize TiO2 nanostructures on titanium substrates by oxidizing Ti foil using small organic molecules as the oxygen source. The effect of reaction temperature and oxygen source on the formation of the TiO2 nanostructures has been studied using scanning electron microscopy, x-ray diffraction, transmission electron microscopy, Raman spectroscopy and water contact angle measurement. Polycrystalline grains are formed when pure oxygen and formic acid are used as the oxygen source; elongated micro-crystals are produced when water vapour is used as the oxygen source; oriented and aligned TiO2 nanorod arrays are synthesized when ethanol, acetaldehyde or acetone are used as the oxygen source. The growth mechanism of the TiO2 nanostructures is discussed. The diffusion of Ti atoms to the oxide/gas interface via the network of the grain boundaries of the thin oxide layer is the determining factor for the formation of well-aligned TiO2 nanorod arrays. The wetting properties of the TiO2 nanostructured surfaces formed are dictated by their structure, varying from a hydrophilic surface to a strongly hydrophobic surface as the surface structure changes from polycrystalline grains to well-aligned nanorod arrays. This tunable growth of TiO2 nanostructures is desirable for promising applications of TiO2 nanostructures in the development of optical devices, sensors, photo-catalysts and self-cleaning coatings.

Ab Initio Study of the Atomic Level Structure of the Rutile TiO2(110)-Titanium Nitride (TiN) Interface.

PubMed

Gutiérrez Moreno, José Julio; Nolan, Michael

2017-11-01

Titanium nitride (TiN) is widely used in industry as a protective coating due to its hardness and resistance to corrosion and can spontaneously form a thin oxide layer when it is exposed to air, which could modify the properties of the coating. With limited understanding of the TiO 2 -TiN interfacial system at present, this work aims to describe the structural and electronic properties of oxidized TiN based on a density functional theory (DFT) study of the rutile TiO 2 (110)-TiN(100) interface model system, also including Hubbard +U correction on Ti 3d states. The small lattice mismatch gives a good stability to the TiO 2 -TiN interface after depositing the oxide onto TiN through the formation of interfacial Ti-O bonds. Our DFT+U study shows the presence of Ti 3+ cations in the TiO 2 region, which are preferentially located next to the interface region as well as the rotation of the rutile TiO 2 octahedra in the interface structure. The DFT+U TiO 2 electronic density of states (EDOS) shows localized Ti 3+ defect states forming in the midgap between the top edge of the valence and the bottom of the conduction band. We increase the complexity of our models by the introduction of nonstoichiometric compositions. Although the vacancy formation energies for Ti in TiN (E vac (Ti) ≥ 4.03 eV) or O in the oxide (E vac (O) ≥ 3.40 eV) are quite high relative to perfect TiO 2 -TiN, defects are known to form during the oxide growth and can therefore be present after TiO 2 formation. Our results show that a structure with exchanged O and N can lie 0.82 eV higher in energy than the perfect system, suggesting the stability of structures with interdiffused O and N anions at ambient conditions. The presence of N in TiO 2 introduces N 2p states localized between the top edge of the O 2p valence states and the midgap Ti 3+ 3d states, thus reducing the band gap in the TiO 2 region for the exchanged O/N interface EDOS. The outcomes of these simulations give us a most comprehensive insight on the atomic level structure and the electronic properties of oxidized TiN surfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Yu; Liu, Bin; Lu, Junling

The effect of residue chlorine on the synthesis of well-dispersed Pd nanoparticles on TiO2 supports using Pd atomic layer deposition (ALD) was investigated. The dispersion of Pd nanoparticles was compared over chlorine-containing and chlorine-free TiO2 supports prepared by selecting proper precursors. The detailed X-ray photoelectron spectroscopy and scanning transmission electron microscopy characterizations showed that higher dispersion of Pd nanoparticles was achieved on the chlorine-containing TiO2 surface than the chlorine-free TiO2. The preparation of TiO2 thin films and Pd nanoparticles was characterized by in situ FT-IR. The temperature required for complete deligation of palladium hexafluoroacetylacetonate decreased from 175 to 100 degreesmore » C with the presence of chlorine on the TiO2 surface. Density functional theory calculations confirm that Pdligand bond strength could be weakened as Pd binds to the Cl sites. The water-gas-shift reaction was chosen as the model reaction, and the catalytic performance of the ALD Pd catalysts was discussed. Compared to reported catalysts, the Pd nanocatalysts supported by TiO2/SiO2 mixed oxides showed promising performance in the low-temperature water-gas-shift reaction.« less

Effects of water plasma immersion ion implantation on surface electrochemical behavior of NiTi shape memory alloys in simulated body fluids

NASA Astrophysics Data System (ADS)

Liu, X. M.; Wu, S. L.; Chu, Paul K.; Chung, C. Y.; Chu, C. L.; Yeung, K. W. K.; Lu, W. W.; Cheung, K. M. C.; Luk, K. D. K.

2007-01-01

Water plasma immersion ion implantation (PIII) was conducted on orthopedic NiTi shape memory alloy to enhance the surface electrochemical characteristics. The surface composition of the NiTi alloy before and after H 2O-PIII was determined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) was utilized to determine the roughness and morphology of the NiTi samples. Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were carried out to investigate the surface electrochemical behavior of the control and H 2O-PIII NiTi samples in simulated body fluids (SBF) at 37 °C as well as the mechanism. The H 2O-PIII NiTi sample showed a higher breakdown potential ( Eb) than the control sample. Based on the AFM results, two different physical models with related equivalent electrical circuits were obtained to fit the EIS data and explain the surface electrochemical behavior of NiTi in SBF. The simulation results demonstrate that the higher resistance of the oxide layer produced by H 2O-PIII is primarily responsible for the improvement in the surface corrosion resistance.

Nanostructured Silica-Titania Hybrid using Dendritic Fibrous Nanosilica as a Photocatalyst.

PubMed

Bayal, Nisha; Singh, Rustam; Polshettiwar, Vivek

2017-05-22

A new method has been developed to fabricate active TiO 2 photocatalysts by tuning the morphology of the catalyst support. A sustainable solution-phase TiO 2 deposition on dendritic fibrous nanosilica (DFNS) protocol is developed, which is better than the complex and expensive atomic layer deposition technique. In general, catalytic activity decreases with an increased TiO 2 loading on conventional mesoporous silica because of the loss of the surface area caused by the blocking of pores. Notably, in the case of the dendritic fibrous nanosilica KCC-1 as a support, because of its open fibrous morphology, even at the highest TiO 2 loading, a relatively large amount of surface area remained intact. This improved the accessibility of active sites, which increased the catalytic performance of the KCC-1/TiO 2 photocatalyst. KCC-1-supported TiO 2 is a superior photocatalyst in terms of H 2 generation (26.4 mmol gTiO2 -1  h -1 ) under UV light. This study may provide a new direction for photocatalyst development through the morphology control of the support. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Size effects on the martensitic phase transformation of NiTi nanograins

NASA Astrophysics Data System (ADS)

Waitz, T.; Antretter, T.; Fischer, F. D.; Simha, N. K.; Karnthaler, H. P.

2007-02-01

The analysis of nanocrystalline NiTi by transmission electron microscopy (TEM) shows that the martensitic transformation proceeds by the formation of atomic-scale twins. Grains of a size less than about 50 nm do not transform to martensite even upon large undercooling. A systematic investigation of these phenomena was carried out elucidating the influence of the grain size on the energy barrier of the transformation. Based on the experiment, nanograins were modeled as spherical inclusions containing (0 0 1) compound twinned martensite. Decomposition of the transformation strains of the inclusions into a shear eigenstrain and a normal eigenstrain facilitates the analytical calculation of shear and normal strain energies in dependence of grain size, twin layer width and elastic properties. Stresses were computed analytically for special cases, otherwise numerically. The shear stresses that alternate from twin layer to twin layer are concentrated at the grain boundaries causing a contribution to the strain energy scaling with the surface area of the inclusion, whereas the strain energy induced by the normal components of the transformation strain and the temperature dependent chemical free energy scale with the volume of the inclusion. In the nanograins these different energy contributions were calculated which allow to predict a critical grain size below which the martensitic transformation becomes unlikely. Finally, the experimental result of the atomic-scale twinning can be explained by analytical calculations that account for the transformation-opposing contributions of the shear strain and the twin boundary energy of the twin-banded morphology of martensitic nanograins.

Processing Ti-25Ta-5Zr Bioalloy via Anodic Oxidation Procedure at High Voltage

NASA Astrophysics Data System (ADS)

Ionita, Daniela; Grecu, Mihaela; Dilea, Mirela; Cojocaru, Vasile Danut; Demetrescu, Ioana

2011-12-01

The current paper reports the processing of Ti-25Ta-5Zr bioalloy via anodic oxidation in NH4BF4 solution under constant potentiostatic conditions at high voltage to obtain more suitable properties for biomedical application. The maximum efficiency of the procedure is reached at highest applied voltage, when the corrosion rate in Hank's solution is decreased approxomately six times. The topography of the anodic layer has been studied using atomic force microscopy (AFM), and the results indicated that the anodic oxidation process increases the surface roughness. The AFM images indicated a different porosity for the anodized surfaces as well. After anodizing, the hydrophilic character of Ti-25Ta-5Zr samples has increased. A good correlation between corrosion rate obtained from potentiodynamic curves and corrosion rate from ions release analysis was obtained.

Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

NASA Astrophysics Data System (ADS)

Didden, Arjen; Hillebrand, Philipp; Wollgarten, Markus; Dam, Bernard; van de Krol, Roel

2016-02-01

Conductive TiN shells have been deposited on SiO2 nanoparticles (10-20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all particles were coated with homogeneous shells containing titanium. Due to the large specific surface area of the nanoparticles, the TiN shells rapidly oxidize upon exposure to air. Electrical measurements show that the partially oxidized shells are conducting, with apparent resistivity of approximately 11 kΩ cm. The resistivity of the powders is strongly influenced by the NH3 dose, with a smaller dose giving an order-of-magnitude higher resistivity.

The cluster compound In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} containing Mo{sub 14} clusters and the new mono- and bi-capped trioctahedral Mo{sub 15} and Mo{sub 16} clusters: Synthesis, crystal structure, and electrical and magnetic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gall, Philippe; Guizouarn, Thierry; Gougeon, Patrick, E-mail: Patrick.Gougeon@univ-rennes1.fr

2015-07-15

Single crystals of the new quaternary compound In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} were obtained by solid state reaction. The crystal structure was determined by single-crystal X-ray diffraction. In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} crystallizes in the orthorhombic space group Pbca with unit-cell parameters a=9.4432(14) Å, b=11.4828(12) Å, c=20.299(4) Å and Z=4. Full-matrix least-squares refinement on F{sup 2} using 3807 independent reflections for 219 refinable parameters resulted in R{sub 1}=0.0259 and wR{sub 2}=0.0591. The crystal structure contains in addition to Mo{sub 14} clusters the first examples of mono- and bi-capped trioctahedral Mo{sub 14} i.e. Mo{sub 15} and Mo{sub 16} clusters.more » The oxygen framework derives from a stacking along the a direction of close-packed layers with sequence (…ABAC…). The Mo–Mo distances range between 2.6938(5) and 2.8420(6) Å and the Mo–O distances between 1.879(5) and 2.250(3) Å, as usually observed in molybdenum oxide clusters. The indium atoms form In{sub 4}{sup 6+} bent chains with In–In distances of 2.6682(5) and 2.6622(8) Å and the Ti atoms are in highly distorted octahedral sites of oxygen atoms with Ti–O distances ranging between 1.865(4) and 2.161(4) Å. Magnetic susceptibility measurements confirm the presence of Ti{sup 4+} cations and the absence of localized moments on the Mo network. Electrical resistivity measurements on a single crystal of In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} show a semimetallic behavior. - Graphical abstract: We present here the synthesis, the crystal structure, and the electrical and magnetic properties of the new compound In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} in which Mo{sub 14} clusters coexist statistically with mono- and bi-capped trioctahedral Mo{sub 14} that is Mo{sub 15} and Mo{sub 16} clusters. - Highlights: • Single crystals of In{sub 4}Ti{sub 1.5}Mo{sub 0.5}Mo{sub 14}O{sub 26} were obtained by solid state reaction. • The crystal structure contains Mo{sub 14}, Mo{sub 15} and Mo{sub 16} clusters. • The indium atoms form In{sub 4}{sup 6+} bent chains. • Poorly metallic behavior. • Absence of localized moments on the Mo network as well as on the Ti atoms.« less

ALD Produced B{sub 2}O{sub 3}, Al{sub 2}O{sub 3} and TiO{sub 2} Coatings on Gd{sub 2}O{sub 3} Burnable Poison Nanoparticles and Carbonaceous TRISO Coating Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weimer, Alan

2012-11-26

This project will demonstrate the feasibility of using atomic layer deposition (ALD) to apply ultrathin neutron-absorbing, corrosion-resistant layers consisting of ceramics, metals, or combinations thereof, on particles for enhanced nuclear fuel pellets. Current pellet coating technology utilizes chemical vapor deposition (CVD) in a fluidized bed reactor to deposit thick, porous layers of C (or PyC) and SiC. These graphitic/carbide materials degrade over time owing to fission product bombardment, active oxidation, thermal management issues, and long-term irradiation effects. ALD can be used to deposit potential ceramic barrier materials of interest, including ZrO{sub 2}, Y{sub 2}O{sub 3}:ZrO{sub 2} (YSZ), Al{sub 2}O{sub 3},more » and TiO{sub 2}, or neutron-absorbing materials, namely B (in BN or B{sub 2}O{sub 3}) and Gd (in Gd{sub 2}O{sub 3}). This project consists of a two-pronged approach to integrate ALD into the next-generation nuclear plant (NGNP) fuel pellet manufacturing process:« less

Development of a Buried Layer Platform at the OMEGA Laser to Study Open L-Shell Spectra from Coronal (non-LTE) Plasmas

NASA Astrophysics Data System (ADS)

Marley, Edward; Jarrot, Charlie; Schneider, Marilyn; Kemp, Elijah; Foord, Mark; Heeter, Robert; Liedahl, Duane; Widmann, Klause; Mauche, Christopher; Brown, Greg; Emig, James

2017-10-01

A buried layer platform is being developed at the OMEGA laser to study the open L-shell spectra of coronal (non LTE) plasmas (ne few 1021/cm3, Te 0.8-1.2 keV) of mid Z materials. Studies have been done using a 250 μm diameter dot composed of a layer of 1200 Å thick Zn between two 600 Å thick layers of Ti, in the center of a 1000 μm diameter, 13 μm thick beryllium tamper. Lasers heat the target from both sides for up to 3 ns. The size of the microdot vs time was measured with x-ray imaging (face-on and side-on). The radiant x-ray power was measured with a low-resolution absolutely calibrated x-ray spectrometer (DANTE). The temperature was measured from the Ti helium-beta complex. The use of this platform for the verification of atomic models is discussed. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Interfacial charge-transfer transitions in a TiO2-benzenedithiol complex with Ti-S-C linkages.

PubMed

Fujisawa, Jun-ichi; Muroga, Ryuki; Hanaya, Minoru

2015-11-28

Interfacial charge-transfer (ICT) transitions between organic materials and inorganic semiconductors are a new mechanism for light absorption at organic-semiconductor interfaces. ICT transitions cause one-step interfacial charge separation without loss of energy. This feature is potentially useful to realize efficient organic-inorganic hybrid solar cells. ICT transitions have been examined by employing titanium dioxide (TiO2) nanoparticles chemisorbed with π-conjugated molecules via Ti-O-C linkages. Here, we report ICT transitions in a TiO2 and 1,2-benzenedithiol (BDT) complex with Ti-S-C linkages. BDT adsorbs on TiO2 by the bridging bidentate coordination of the sulfur atoms to surface titanium atoms. The TiO2-BDT complex shows ICT transitions from the BDT moiety to the conduction band of TiO2 in the visible region. The ICT transitions occur by orbital overlaps between the d orbitals of the surface titanium atoms and the π orbitals of the benzene ring. Our density-functional-theory (DFT) analysis reveals that the 3p valence orbitals of the sulfur bridging atoms contribute to more than 50% of the highest occupied molecular orbital (HOMO) and the 3d-3p(sulfur)-π interaction via the Ti-S-C linkage enhances the electronic mixing between the titanium atoms and the benzene moiety as compared to the 3d-2p(oxygen)-πvia the Ti-O-C linkage. This result indicates the important role of the heavier-atom linkers for strong organic-inorganic electronic couplings.

Effects of vacancies on atom displacement threshold energy calculations through Molecular Dynamics Methods in BaTiO3

NASA Astrophysics Data System (ADS)

Gonzalez Lazo, Eduardo; Cruz Inclán, Carlos M.; Rodríguez Rodríguez, Arturo; Guzmán Martínez, Fernando; Abreu Alfonso, Yamiel; Piñera Hernández, Ibrahin; Leyva Fabelo, Antonio

2017-09-01

A primary approach for evaluating the influence of point defects like vacancies on atom displacement threshold energies values Td in BaTiO3 is attempted. For this purpose Molecular Dynamics Methods, MD, were applied based on previous Td calculations on an ideal tetragonal crystalline structure. It is an important issue in achieving more realistic simulations of radiation damage effects in BaTiO3 ceramic materials. It also involves irradiated samples under severe radiation damage effects due to high fluency expositions. In addition to the above mentioned atom displacement events supported by a single primary knock-on atom, PKA, a new mechanism was introduced. It corresponds to the simultaneous excitation of two close primary knock-on atoms in BaTiO3, which might take place under a high flux irradiation. Therefore, two different BaTiO3 Td MD calculation trials were accomplished. Firstly, single PKA excitations in a defective BaTiO3 tetragonal crystalline structure, consisting in a 2×2×2 BaTiO3 perovskite like super cell, were considered. It contains vacancies on Ba and O atomic positions under the requirements of electrical charge balance. Alternatively, double PKA excitations in a perfect BaTiO3 tetragonal unit cell were also simulated. On this basis, the corresponding primary knock-on atom (PKA) defect formation probability functions were calculated at principal crystal directions, and compared with the previous one we calculated and reported at an ideal BaTiO3 tetrahedral crystal structure. As a general result, a diminution of Td values arises in present calculations in comparison with those calculated for single PKA excitation in an ideal BaTiO3 crystal structure.

Microstructure and antibacterial property of in situ TiO(2) nanotube layers/titanium biocomposites.

PubMed

Cui, C X; Gao, X; Qi, Y M; Liu, S J; Sun, J B

2012-04-01

The TiO(2) nanotube layer was in situ synthesized on the surface of pure titanium by the electrochemical anodic oxidation. The diameter of nano- TiO(2) nanotubes was about 70~100 nm. The surface morphology and phase compositions of TiO(2) nanotube layers were observed and analyzed using the scanning electron microscope (SEM). The important processing parameters, including anodizing voltage, reaction time, concentration of electrolyte, were optimized in more detail. The photocatalytic activity of the nano- TiO(2) nanotube layers prepared with optimal conditions was evaluated via the photodegradation of methylthionine in aqueous solution. The antibacterial property of TiO(2) nanotube layers prepared with optimal conditions was evaluated by inoculating Streptococcus mutans on the TiO(2) nanotube layers in vitro. The results showed that TiO(2) nanotube layers/Ti biocomposites had very good antibacterial activity to resist Streptococcus mutans. As a dental implant biomaterial, in situ TiO(2) nanotube layer/Ti biocomposite has better and wider application prospects. Copyright © 2012 Elsevier Ltd. All rights reserved.

Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe

NASA Astrophysics Data System (ADS)

de Jong, N.; Frantzeskakis, E.; Zwartsenberg, B.; Huang, Y. K.; Wu, D.; Hlawenka, P.; Sańchez-Barriga, J.; Varykhalov, A.; van Heumen, E.; Golden, M. S.

2015-08-01

Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved, and core-level photoemission. Fe, Nb, and Ag were evaporated onto Bi1 .5Sb0 .5Te1 .7Se1 .3 (BSTS) surfaces both at room temperature and 38 K. The coverage and temperature dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.2 monolayer at low temperature all three metals lead to a downward shift of the TI bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution for the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behavior consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways still lead to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves downward (p -type dopant behavior) and then upward (n -type behavior) on increasing coverage.

Nanostructured TiOx as a catalyst support material for proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Phillips, Richard S.

Recent interest in the development of new catalyst support materials for proton exchange membrane fuel cells (PEMFCs) has stimulated research into the viability of TiO2-based support structures. Specifically, substoichiometric TiO2 (TiOx) has been reported to exhibit a combination of high conductivity, stability, and corrosion resistance. These properties make TiOx-based support materials a promising prospect when considering the inferior corrosion resistance of traditional carbon-based supports. This document presents an investigation into the formation of conductive and stable TiOx thin films employing atomic layer deposition (ALD) and a post deposition oxygen reducing anneal (PDORA). Techniques for manufacturing TiOx-based catalyst support nanostructures by means of ALD in conjunction with carbon black (CB), anodic aluminum oxide (AAO) and silicon nanowires (SiNWs) will also be presented. The composition and thickness of resulting TiOx thin films was determined with the aid of Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and scanning electron microscopy (SEM). Film crystal structure was determined with X-ray diffraction (XRD) analysis. Film conductivity was calculated using four-point probe (4-PP) and film thickness measurement data. Resulting thin films show a significant decrease of oxygen in ALD TiOx films corresponding with a great increase in conductivity following the PDORA. The effectiveness of the PDORA was also found to be highly dependent on ALD process parameters. TiOx-based nanostructures were coated with platinum using one of three Pt deposition techniques. First, liquid phase deposition (LPD), which was performed at room temperature, provided equal access to catalyst support material surfaces which were suspended in solution. Second, plasma enhanced atomic layer deposition (PEALD), which was performed at 450°C, provided good Pt particle dispersion and particle size controllability. Third, physical vapor deposition (PVD), which was also performed at room temperature, was used as a low temperature vapor-phase deposition technique for comparison with PEALD Pt coated materials. The temperature of the Pt deposition technique is an important parameter to consider due to the potential adverse effects of the strong metal support interaction (SMSI) which may take place at temperatures above 200°C. Platinum coated nanostructures were analyzed electrochemically using cyclic voltammetry (CV), rotating disk electrode (RDE) and accelerated stress tests (ASTs). CV and RDE results generally show that platinum activity values are initially not as high as those typically observed for platinum on carbon; however, AST results indicate that TiO x-based materials are much more stable long-term and hence their level of activity is likely to overtake traditional platinum on carbon materials in a PEMFC system.

Fabrication of ultrathin multilayered superomniphobic nanocoatings by liquid flame spray, atomic layer deposition, and silanization.

PubMed

Sorvali, Miika; Vuori, Leena; Pudas, Marko; Haapanen, Janne; Mahlberg, Riitta; Ronkainen, Helena; Honkanen, Mari; Valden, Mika; Mäkelä, Jyrki M

2018-05-04

Superomniphobic, i.e. liquid-repellent, surfaces have been an interesting area of research during recent years due to their various potential applications. However, producing such surfaces, especially on hard and resilient substrates like stainless steel, still remains challenging. We present a stepwise fabrication process of a multilayered nanocoating on a stainless steel substrate, consisting of a nanoparticle layer, a nanofilm, and a layer of silane molecules. Liquid flame spray was used to deposit a TiO 2 nanoparticle layer as the bottom layer for producing a suitable surface structure. The interstitial Al 2 O 3 nanofilm, fabricated by atomic layer deposition (ALD), stabilized the nanoparticle layer, and the topmost fluorosilane layer lowered the surface energy of the coating for enhanced omniphobicity. The coating was characterized with field emission scanning electron microscopy, focused ion beam scanning electron microscopy, x-ray photoelectron spectroscopy, contact angle (CA) and sliding angle (SA) measurements, and microscratch testing. The widely recognized requirements for superrepellency, i.e. CA > 150° and SA < 10°, were achieved for deioinized water, diiodomethane, and ethylene glycol. The mechanical stability of the coating could be varied by tuning the thickness of the ALD layer at the expense of repellency. To our knowledge, this is the thinnest superomniphobic coating reported so far, with the average thickness of about 70 nm.

Fabrication of ultrathin multilayered superomniphobic nanocoatings by liquid flame spray, atomic layer deposition, and silanization

NASA Astrophysics Data System (ADS)

Sorvali, Miika; Vuori, Leena; Pudas, Marko; Haapanen, Janne; Mahlberg, Riitta; Ronkainen, Helena; Honkanen, Mari; Valden, Mika; Mäkelä, Jyrki M.

2018-05-01

Superomniphobic, i.e. liquid-repellent, surfaces have been an interesting area of research during recent years due to their various potential applications. However, producing such surfaces, especially on hard and resilient substrates like stainless steel, still remains challenging. We present a stepwise fabrication process of a multilayered nanocoating on a stainless steel substrate, consisting of a nanoparticle layer, a nanofilm, and a layer of silane molecules. Liquid flame spray was used to deposit a TiO2 nanoparticle layer as the bottom layer for producing a suitable surface structure. The interstitial Al2O3 nanofilm, fabricated by atomic layer deposition (ALD), stabilized the nanoparticle layer, and the topmost fluorosilane layer lowered the surface energy of the coating for enhanced omniphobicity. The coating was characterized with field emission scanning electron microscopy, focused ion beam scanning electron microscopy, x-ray photoelectron spectroscopy, contact angle (CA) and sliding angle (SA) measurements, and microscratch testing. The widely recognized requirements for superrepellency, i.e. CA > 150° and SA < 10°, were achieved for deioinized water, diiodomethane, and ethylene glycol. The mechanical stability of the coating could be varied by tuning the thickness of the ALD layer at the expense of repellency. To our knowledge, this is the thinnest superomniphobic coating reported so far, with the average thickness of about 70 nm.

STM/STS Observation on Layered Nitride Superconductor α-(DDA)xTiNCl

NASA Astrophysics Data System (ADS)

Sugimoto, Akira; Ukita, Ryuichi; Ekino, Toshikazu; Zheng, Zhanfeng; Yamanaka, Shoji

2012-12-01

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on α-(DDA)xTiNCl (DDA=H2N-(CH2)10-NH2, Tc=16 K) have been carried out. The STM topography exhibits simple rectangular shaped atomic lattice with the periods of |a|=0.38 nm and |b| =0.33 nm. The averaged dI / dV spectrum shows the gap value of Δ ~ 9 meV, giving an unusual large gap ratio 2Δ/kBTc ≃ 13. The STS results show the bar-shaped domain structures along the b-axis direction in the bias range of V = +5 ~ +15 mV, demonstrating the possible existence of intercalated molecules.

Zinc Oxide/TiO2 Bilayer Heterojunction as a Working Electrode in Quasi Solid Dye Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Aprilia, A.; Safriani, L.; Arsyad, Wa Ode S.; Syakir, N.; Susilawati, T.; Mulyana, C.; Fitrilawati; Hidayat, R.

2017-07-01

Bilayer heterojunction of aluminium doped zinc oxide (AZO) and titanium dioxide (TiO2) mesoporous has been successfully deposited on fluorine tin oxide (FTO) substrate as working electrode in dye sensitized solar cell. This layer was used as working electrode in quasi solid dye sensitized solar cell. The solar cell structure is FTO/ZnO/TiO2/PGE/Pt/FTO using polymer gel electrolyte (PGE). In polymer gel electrolyte system, hybrid copolymer based on poly-TMSPMA (3-methoxysilyl propyl methacrylate) was used as a matrix to trap ionic liquid. An addition of aluminum as atom dopant also studied to observe the physical properties changes of photoanode related to solar cell performance. AlCl3 was used as dopant material with the concentrations at 0.5 weight % and 1.0 weight% of zinc acetate dehydrate as raw material. Based on our previous result, the existence of Al dopant would decrease the surface roughness of ZnO layer, reduce the grain size of ZnO particles, transmittance at visible light increase and also change the charge carrier density. Nevertheless, the highest efficiency was achieved for undoped ZnO/TiO2 photoanode (η=0.67%). Based on current-voltage measurement data analysis (using diode model equation) the ideality factor (n) of device using undoped ZnO was smaller (n=2.96) than AZO 0.5 wt% and 1.0 wt% (n=∼4), indicate better quality of undoped ZnO/TiO2 interfaces rather than AZO/TiO2.

ALD-Developed Plasmonic Two-Dimensional Au-WO3-TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices.

PubMed

Karbalaei Akbari, Mohammad; Hai, Zhenyin; Wei, Zihan; Detavernier, Christophe; Solano, Eduardo; Verpoort, Francis; Zhuiykov, Serge

2018-03-28

Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO 2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO 2 -based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO 3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO 3 -TiO 2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO 2 and Au-WO 3 -TiO 2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

PubMed

Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

2017-10-11

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

The layer boundary effect on multi-layer mesoporous TiO 2 film based dye sensitized solar cells

DOE PAGES

Xu, Feng; Zhu, Kai; Zhao, Yixin

2016-10-10

Multi-layer mesoporous TiO 2 prepared by screen printing is widely used for fabrication of high-efficiency dye-sensitized solar cells (DSSCs). Here, we compare the three types of ~10 um thick mesoporous TiO 2 films, which were screen printed as 1-, 2- and 4-layers using the same TiO 2 nanocrystal paste. The layer boundary of the multi-layer mesoporous TiO 2 films was observed in the cross-section SEM. The existence of a layer boundary could reduce the photoelectron diffusion length with the increase of layer number. However, the photoelectron diffusion lengths of the Z907 dye sensitized solar cells based on these different layeredmore » mesoporous TiO 2 films are all longer than the film thickness. Consequently, the photovoltaic performance seems to have little dependence on the layer number of the multi-layer TiO 2 based DSSCs.« less

The layer boundary effect on multi-layer mesoporous TiO 2 film based dye sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Feng; Zhu, Kai; Zhao, Yixin

Multi-layer mesoporous TiO 2 prepared by screen printing is widely used for fabrication of high-efficiency dye-sensitized solar cells (DSSCs). Here, we compare the three types of ~10 um thick mesoporous TiO 2 films, which were screen printed as 1-, 2- and 4-layers using the same TiO 2 nanocrystal paste. The layer boundary of the multi-layer mesoporous TiO 2 films was observed in the cross-section SEM. The existence of a layer boundary could reduce the photoelectron diffusion length with the increase of layer number. However, the photoelectron diffusion lengths of the Z907 dye sensitized solar cells based on these different layeredmore » mesoporous TiO 2 films are all longer than the film thickness. Consequently, the photovoltaic performance seems to have little dependence on the layer number of the multi-layer TiO 2 based DSSCs.« less

Preparation and characterization of WO3 nanoparticles, WO3/TiO2 core/shell nanocomposites and PEDOT:PSS/WO3 composite thin films for photocatalytic and electrochromic applications

NASA Astrophysics Data System (ADS)

Boyadjiev, Stefan I.; Santos, Gustavo dos Lopes; Szżcs, Júlia; Szilágyi, Imre M.

2016-03-01

In this study, monoclinic WO3 nanoparticles were obtained by thermal decomposition of (NH4)xWO3 in air at 600 °C. On them by atomic layer deposition (ALD) TiO2 films were deposited, and thus core/shell WO3/TiO2 nanocomposites were prepared. We prepared composites of WO3 nanoparticles with conductive polymer as PEDOT:PSS, and deposited thin films of them on glass and ITO substrates by spin coating. The formation, morphology, composition and structure of the as-prepared pure and composite nanoparticles, as well thin films, were studied by TEM, SEM-EDX and XRD. The photocatalytic activity of both the WO3 and core/shell WO3/TiO2 nanoparticles was studied by decomposing methyl orange in aqueous solution under UV light irradiation. Cyclic voltammetry measurements were performed on the composite PEDOT:PSS/WO3 thin films, and the coloring and bleaching states were studied.

Degradation of Au-Ti contacts of SiGe HBTs during electromagnetic field stress

NASA Astrophysics Data System (ADS)

Alaeddine, A.; Genevois, C.; Kadi, M.; Cuvilly, F.; Daoud, K.

2011-02-01

This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si3N4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

PubMed Central

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

Abstract High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. PMID:28740558

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers.

PubMed

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

High-quality thermoelectric La 0.2 Sr 0.8 TiO 3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO 3 (001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10 -4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO 3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Sensitive determination of the Young's modulus of thin films by polymeric microcantilevers

NASA Astrophysics Data System (ADS)

Colombi, Paolo; Bergese, Paolo; Bontempi, Elza; Borgese, Laura; Federici, Stefania; Sylvest Keller, Stephan; Boisen, Anja; Eleonora Depero, Laura

2013-12-01

A method for the highly sensitive determination of the Young's modulus of TiO2 thin films exploiting the resonant frequency shift of a SU-8 polymer microcantilever (MC) is presented. Amorphous TiO2 films with different thickness ranging from 10 to 125 nm were grown at low temperature (90 °C) with subnanometer thickness resolution on SU-8 MC arrays by means of atomic layer deposition. The resonant frequencies of the MCs were measured before and after coating and the elastic moduli of the films were determined by a theoretical model developed for this purpose. The Young's modulus of thicker TiO2 films (>75 nm) was estimated to be about 110 GPa, this value being consistent with the value of amorphous TiO2. On the other hand we observed a marked decrease of the Young's modulus for TiO2 films with a thickness below 50 nm. This behavior was found not to be related to a decrease of the film mass density, but to surface effects according to theoretical predictions on size-dependent mechanical properties of nano- and microstructures.

Film transfer enabled by nanosheet seed layers on arbitrary sacrificial substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dral, A. P.; Nijland, M.; Koster, G.

An approach for film transfer is demonstrated that makes use of seed layers of nanosheets on arbitrary sacrificial substrates. Epitaxial SrTiO{sub 3}, SrRuO{sub 3}, and BiFeO{sub 3} films were grown on Ca{sub 2}Nb{sub 3}O{sub 10} nanosheet seed layers on phlogopite mica substrates. Cleavage of the mica substrates enabled film transfer to flexible polyethylene terephthalate substrates. Electron backscatter diffraction, X-ray diffraction, and atomic force microscopy confirmed that crystal orientation and film morphology remained intact during transfer. The generic nature of this approach is illustrated by growing films on zinc oxide substrates with a nanosheet seed layer. Film transfer to a flexiblemore » substrate was accomplished via acid etching.« less

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

DOE PAGES

Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

2016-12-22

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3Al 2O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3Al 2O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3Al 2O 6 during subsequent growth, thus allowingmore » its integration in a wider range of oxide heterostructures.« less

Hydrodynamic stability and Ti-tracer distribution in low-adiabat OMEGA direct-drive implosions

NASA Astrophysics Data System (ADS)

Joshi, Tirtha R.

We discuss the hydrodynamic stability of low-adiabat OMEGA direct-drive implosions based on results obtained from simultaneous emission and absorption spectroscopy of a titanium tracer added to the target. The targets were deuterium filled, warm plastic shells of varying thicknesses and filling gas pressures with a submicron Ti-doped tracer layer initially located on the inner surface of the shell. The spectral features from the titanium tracer are observed during the deceleration and stagnation phases of the implosion, and recorded with a time integrated spectrometer (XRS1), streaked crystal spectrometer (SSCA) and three gated, multi-monochromatic X-ray imager (MMI) instruments fielded along quasi-orthogonal lines-of-sight. The time-integrated, streaked and gated data show simultaneous emission and absorption spectral features associated with titanium K-shell line transitions but only the MMI data provides spatially resolved information. The arrays of gated spectrally resolved images recorded with MMI were processed to obtain spatially resolved spectra characteristic of annular contour regions on the image. A multi-zone spectroscopic analysis of the annular spatially resolved spectra permits the extraction of plasma conditions in the core as well as the spatial distribution of tracer atoms. In turn, the titanium atom distribution provides direct evidence of tracer penetration into the core and thus of the hydrodynamic stability of the shell. The observations, timing and analysis indicate that during fuel burning the titanium atoms have migrated deep into the core and thus shell material mixing is likely to impact the rate of nuclear fusion reactions, i.e. burning rate, and the neutron yield of the implosion. We have found that the Ti atom number density decreases towards the center in early deceleration phase, but later in time the trend is just opposite, i.e., it increases towards the center of the implosion core. This is in part a consequence of the convergent effect of spherical geometry. The spatial profiles of Ti areal densities in the implosion core are extracted from space-resolved spectra and also evaluated using 1D spherical scaling. The trends are similar to the Ti number density spatial profiles. The areal densities extracted from data and 1D spherical scaling are very comparable in the outer spherical zones of the implosion core but significantly deviate in the innermost zone. We have observed that approximately 85% of the Ti atoms migrate into the hot core, while 15% of the atoms are still on the shell-fuel interface and contributing to the absorption. In addition, a method to extract the hot spot size based on the formation of the absorption feature in a sequence of annular spectra will be discussed. Results and trends are discussed as a function of target shell thickness and filling pressure, and laser pulse shape.

A study on wear resistance and microcrack of the Ti 3Al/TiAl + TiC ceramic layer deposited by laser cladding on Ti-6Al-4V alloy

NASA Astrophysics Data System (ADS)

Li, Jianing; Chen, Chuanzhong; Squartini, Tiziano; He, Qingshan

2010-12-01

Laser cladding of the Al + TiC alloy powder on Ti-6Al-4V alloy can form the Ti 3Al/TiAl + TiC ceramic layer. In this study, TiC particle-dispersed Ti 3Al/TiAl matrix ceramic layer on the Ti-6Al-4V alloy by laser cladding has been researched by means of X-ray diffraction, scanning electron microscope, electron probe micro-analyzer, energy dispersive spectrometer. The main difference from the earlier reports is that Ti 3Al/TiAl has been chosen as the matrix of the composite coating. The wear resistance of the Al + 30 wt.% TiC and the Al + 40 wt.% TiC cladding layer was approximately 2 times greater than that of the Ti-6Al-4V substrate due to the reinforcement of the Ti 3Al/TiAl + TiC hard phases. However, when the TiC mass percent was above 40 wt.%, the thermal stress value was greater than the materials yield strength limit in the ceramic layer, the microcrack was present and its wear resistance decreased.

Layered-structural monoclinic–orthorhombic perovskite La{sub 2}Ti{sub 2}O{sub 7} to orthorhombic LaTiO{sub 3} phase transition and their microstructure characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herrera, G., E-mail: manuel.herrera@enp.unam.mx; Departamento de Química Inorgánica, Universidad de Valencia, 46100 Burjasot, Valencia; Instituto de Ciencias Nucleares, Universidad Nacional Autónoma de México, 04510 México D. F.

2014-03-01

The layered-structural ceramics, such as lanthanum titanate (La{sub 2}Ti{sub 2}O{sub 7}), have been known for their good temperature and low dielectric loss at microwave frequencies that make them good candidate materials for high frequency applications. However, few studies have been conducted on the synthesis optimization by sol gel reaction, in particular by acrylamide polymerization route. The interest in La{sub 2}Ti{sub 2}O{sub 7} ceramic has been greatly increased recently due to the effect of oriented grains. This anisotropy of the microstructure leads to anisotropy in dielectric, electrical and mechanical properties. In this study, grain oriented lanthanum titanate was produced by themore » sol–gel acrylamide polymerization route. The characterizations of the samples were achieved by thermal analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). X-ray diffraction indicates that the formation of monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} nanocrystals is a necessary first step to obtain orthorhombic LaTiO{sub 3} nanocomposites (with space group Pbnm). In this work we identified that the monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} with space group P2{sub 1} transforms its structure into one with the orthorhombic space group Cmc2{sub 1} at approximately 1073 K. The microstructure associated consisted of flaky monoclinic La{sub 2}Ti{sub 2}O{sub 7} nanocomposites in comparison with round-shaped LaTiO{sub 3} nanocomposites. - Highlights: • The flaky-like La{sub 2}Ti{sub 2}O{sub 7} compound was synthesized by sol–gel acrylamide route. • Simultaneous monitoring of the DTA and XRD with temperature was performed. • Phase transformation characterization of La{sub 2}Ti{sub 2}O{sub 7} has been carried out. • The variation of the La{sub 2}Ti{sub 2}O{sub 7} and LaTiO{sub 3} grain morphology has been compared.« less

Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

NASA Astrophysics Data System (ADS)

Ylilammi, Markku; Ylivaara, Oili M. E.; Puurunen, Riikka L.

2018-05-01

The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

Interfacial coherency stress distribution in TiN/AlN bilayer and multilayer films studied by FEM analysis

PubMed Central

Chawla, Vipin; Holec, David; Mayrhofer, Paul H.

2012-01-01

The development of interfacial coherency stresses in TiN/AlN bilayer and multilayer films was investigated by finite element method (ABAQUS) using the four-node bilinear quadrilateral axisymmetric element CAX4R. The TiN and AlN layers are always in compression and tension at the interface, respectively, as may be expected from the fact TiN has larger lattice parameter than AlN. Both, the bi-layer and the multilayer stacks bend due to the coherency stresses. For the TiN/AlN bilayer system, the curvature of the bending is largest for the TiN/AlN thickness ratios ∼0.5 and ∼2 (at which one of the two layers is fully in compression or tension), while it is smaller for the layers with the same thickness (at which both layers posses regions with compressive as well as tensile stresses). This stress distribution over the bi-layer thickness is shown to be strongly influenced by the presence and the properties of a substrate. Furthermore, the coherency stress profile and specimen curvature of a TiN/AlN multilayer system was studied as a function of the top-most layer thickness. The curvature is maximum for equal number of TiN and AlN layers, and decreases with increasing the number of TiN/AlN periods. Within the growth of an additional TiN/AlN bilayer, the curvature first decreases to zero for a vertically symmetrical geometry over the layers when the TiN layer growth is finished (e.g. for (n + 1) layers of TiN and n layers of AlN). At this stage, the coherency stresses in TiN and AlN are same in each layer type (independent on the layer position). The growth of the second half of the TiN/AlN bi-layer (i.e. the AlN) to finish the period, again bends the specimen, and generates a non-uniform stress distribution. This suggests that the top layer as well as the overall specimen geometry plays a critical role on the actual coherency stress profile. PMID:27570370

Effect of TiO 2 particle size and layer thickness on mesoscopic perovskite solar cells

DOE PAGES

Lee, Dong Geon; Kim, Min-cheol; Kim, Byeong Jo; ...

2017-11-16

Mesoporous TiO 2 (mp-TiO 2) layers are commonly used as electron transport layers in perovskite solar cells, which help to extract electrons from the perovskite light-absorbing layer and transport them to the electrodes. We investigated the effects of the layer thickness of mp-TiO 2 and particle size of TiO 2 on photovoltaic properties, in terms of the surface area of the mp-layer and the interfacial areas of the TiO 2 nanoparticles in the mp-layer. Various mp-TiO 2 layers with thicknesses of 150, 250, and 400 nm and particle sizes of 25 nm and 41 nm were prepared to compare themore » photovoltaic properties of such layer-containing perovskite solar cells. Time-resolved photoluminescence decay and impedance studies showed that interfacial resistance as well as perovskite-to-TiO 2 charge injection are important factors affecting photovoltaic performance. The deterioration of the photovoltaic parameters with increasing TiO 2/TiO 2 interfacial area also confirms that the interfacial series resistance that arises from these connections should be reduced to enhance the performance of mesoscopic perovskite solar cells.« less

Effect of TiO 2 particle size and layer thickness on mesoscopic perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Dong Geon; Kim, Min-cheol; Kim, Byeong Jo

Mesoporous TiO 2 (mp-TiO 2) layers are commonly used as electron transport layers in perovskite solar cells, which help to extract electrons from the perovskite light-absorbing layer and transport them to the electrodes. We investigated the effects of the layer thickness of mp-TiO 2 and particle size of TiO 2 on photovoltaic properties, in terms of the surface area of the mp-layer and the interfacial areas of the TiO 2 nanoparticles in the mp-layer. Various mp-TiO 2 layers with thicknesses of 150, 250, and 400 nm and particle sizes of 25 nm and 41 nm were prepared to compare themore » photovoltaic properties of such layer-containing perovskite solar cells. Time-resolved photoluminescence decay and impedance studies showed that interfacial resistance as well as perovskite-to-TiO 2 charge injection are important factors affecting photovoltaic performance. The deterioration of the photovoltaic parameters with increasing TiO 2/TiO 2 interfacial area also confirms that the interfacial series resistance that arises from these connections should be reduced to enhance the performance of mesoscopic perovskite solar cells.« less

Reaction products and oxide thickness formed by Ti out-diffusion and oxidization in poly-Pt/Ti/SiO 2/Si with oxide films deposited

NASA Astrophysics Data System (ADS)

Chen, Changhong; Huang, Dexiu; Zhu, Weiguang; Feng, Yi; Wu, Xigang

2006-08-01

In the paper, we present experimental results to enhance the understanding of Ti out-diffusion and oxidization in commercial poly-Pt/Ti/SiO 2/Si wafers with perovskite oxide films deposited when heat-treated in flowing oxygen ambient. It indicates that when heat-treated at 550 and 600 °C, PtTi 3+PtTi and PtTi are the reaction products from interfacial interaction, respectively; while heat-treated at 650 °C and above, the products become three layers of titanium oxides instead of the alloys. Confirmed to be rutile TiO 2, the first two layers spaced by 65 nm encapsulate the Pt surface by the first layer with 60 nm thick forming at its surface and by the next layer with 35 nm thick inserting its original layer. In addition, the next layer is formed as a barrier to block up continuous diffusion paths of Ti, and thus results in the last layer of TiO 2- x formed by the residual Ti oxidizing.

Vancomycin incorporated chitosan/gelatin coatings coupled with TiO2-SrHAP surface modified cp-titanium for osteomyelitis treatment.

PubMed

D, Nancy; N, Rajendran

2018-04-15

Commercially pure Titanium (Cp-Ti) was electrophoretically modified using double layer coatings consisting of TiO 2 -SrHAP as the first layer (TH) followed by vancomycin incorporated Chitosan/Gelatin as the second layer (THV). The nano crystalline phase of coated Strontium incorporated hydroxyapatite (Sr-HAP) confirmed through X-ray diffraction studies (XRD). The polyelectrolyte complex formation between chitosan and gelatin, the stability of the drug, the bonding between chitosan and Sr-HAP were confirmed through infra-red spectroscopic studies (IR). The average roughness (R a ) value calculated from atomic force microscopy (AFM) corroborates with the water contact angle data, which clearly confirms the tuning property of the surface in relation to the surface energy and roughness of the coated samples. The total amount of vancomycin encapsulated was calculated to be 11.5 μg. Antibacterial activity was found against both Staphylococcus aureus strains methicillin resistant Staphylococcus aureus (MRSA) and methicillin sensitive Staphylococcus aureus (MRSA) for a drug concentration of 2.74 μg released after 12 h of immersion. The in-vitro cell culture studies showed enhanced cellular activity for THV samples. Thus, THV samples have a dual action at the surface, by resisting the bacterial adhesion and enhancing cellular interaction at the bio-interface, making it a promising candidate to treat osteomyelitis infection. Copyright © 2018. Published by Elsevier B.V.

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface

PubMed Central

Zhao, Weiwei; Li, Mingda; Chang, Cui-Zu; Jiang, Jue; Wu, Lijun; Liu, Chaoxing; Moodera, Jagadeesh S.; Zhu, Yimei; Chan, Moses H. W.

2018-01-01

The exact mechanism responsible for the significant enhancement of the superconducting transition temperature (Tc) of monolayer iron selenide (FeSe) films on SrTiO3 (STO) over that of bulk FeSe is an open issue. We present the results of a coordinated study of electrical transport, low temperature electron energy-loss spectroscopy (EELS), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) measurements on FeSe/STO films of different thicknesses. HAADF-STEM imaging together with EELS mapping across the FeSe/STO interface shows direct evidence of electrons transferred from STO to the FeSe layer. The transferred electrons were found to accumulate within the first two atomic layers of the FeSe films near the STO substrate. An additional Se layer is also resolved to reside between the FeSe film and the TiOx-terminated STO substrate. Our transport results found that a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. This increase in Tc is due to the positive backgate that “pulls” the transferred electrons in FeSe films closer to the interface and thus enhances their coupling to interfacial phonons and also the electron-electron interaction within FeSe films. PMID:29556528

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO 3 interface

DOE PAGES

Zhao, Weiwei; Li, Mingda; Chang, Cui -Zu; ...

2018-03-16

The exact mechanism responsible for the significant enhancement of the superconducting transition temperature (T c) of monolayer iron selenide (FeSe) films on SrTiO 3 (STO) over that of bulk FeSe is an open issue. We present the results of a coordinated study of electrical transport, low temperature electron energy-loss spectroscopy (EELS), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) measurements on FeSe/STO films of different thicknesses. HAADF-STEM imaging together with EELS mapping across the FeSe/STO interface shows direct evidence of electrons transferred from STO to the FeSe layer. The transferred electrons were found to accumulate within the first twomore » atomic layers of the FeSe films near the STO substrate. An additional Se layer is also resolved to reside between the FeSe film and the TiO x-terminated STO substrate. Our transport results found that a positive backgate applied from STO is particularly effective in enhancing T c of the films while minimally changing the carrier density. Furthermore, this increase in T c is due to the positive backgate that “pulls” the transferred electrons in FeSe films closer to the interface and thus enhances their coupling to interfacial phonons and also the electron-electron interaction within FeSe films.« less

Loose nanofiltration membrane for dye/salt separation through interfacial polymerization with in-situ generated TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Qi; Fan, Lin; Yang, Zhen; Zhang, Runnan; Liu, Ya-nan; He, Mingrui; Su, Yanlei; Jiang, Zhongyi

2017-07-01

In this study, a high flux nanofiltration (NF) membrane with hybrid polymer-nanoparticle active layer was fabricated by chemical crosslinking of piperazine (PIP) and 1, 3, 5-benzene tricarbonyl trichloride (TMC). An in-situ generated method was applied to deposit titanium dioxide (TiO2) nanoparticles uniformly on the membrane surface, leading to the enhancement of the surface hydrophilicity, roughness and relative surface area of the polyamide (PA) layer. The morphology of the modified membrane was investigated by scanning electron microscopy (SEM) and Atomic force microscopy (AFM), also energy dispersive X-ray microanalysis (EDX) was used to analyze the distribution of Ti element. Chemical structure was observed by Fourier transmission infrared attenuated total reflectance (FTIR-ATR) spectroscopy. Remarkably, the optimal water flux of the loose NF membrane was 65.0 Lm-2 h-1 bar-1 nearly 5 times as much as the pure PA membrane flux. The rejections of the loose NF membranes for dyes were almost all greater than 95.0%, while the rejection for sodium sulfate (Na2SO4) was only about 17.0%, which indicated that the modified membrane had an impressive potential application for dye desalination and purification.

Electronic Asymmetry by Compositionally Braking Inversion Symmetry

NASA Astrophysics Data System (ADS)

Warusawithana, Maitri

2005-03-01

By stacking molecular layers of 3 different perovskite titanate phases, BaTiO3, SrTiO3 and CaTiO3 with atomic layer control, we construct nanostructures where global inversion symmetry is broken. With the structures clamped to the substrate, the stacking order gives rise to asymmetric strain fields. The dielectric response show asymmetric field tuning consistent with the symmetry of the stacking order. By analyzing the temperature and frequency dependence of the complex dielectric constant, we show that the response comes from activated switching of dipoles between two asymmetric states separated by an energy barrier. We find the size of average dipole units from the temperature dependence of the linewidth of field tuning curves to be around 10 unit cells in all the different nanostructures we investigate. At low temperatures we observe a deviation from the kinetic response suggesting a further growth in correlations. Pyrocurrent measurements confirm this observation indicating a phase transition to a ferro-like state. We explain the high temperature dipoles as single unit cell cross sectional columns correlated via the strain fields in the stacking direction, with the height somewhat short of the film thickness possibly due to some form of weak disorder.

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE PAGES

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson; ...

2016-07-27

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Color tone and interfacial microstructure of white oxide layer on commercially pure Ti and Ti-Nb-Ta-Zr alloys

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Mizushima, Keisuke; Watanabe, Yoshimi; Kasuga, Toshihiro; Niinomi, Mitsuo

2014-11-01

In this study, the relationships among oxidation condition, color tone, and the cross-sectional microstructure of the oxide layer on commercially pure (CP) Ti and Ti-36Nb-2Ta-3Zr-0.3O were investigated. “White metals” are ideal metallic materials having a white color with sufficient strength and ductility like a metal. Such materials have long been sought for in dentistry. We have found that the specific biomedical Ti alloys, such as CP Ti, Ti-36Nb-2Ta-3Zr-0.3O, and Ti-29Nb-13Ta-4.6Zr, form a bright yellowish-white oxide layer after a particular oxidation heat treatment. The brightness L* and yellowness +b* of the oxide layer on CP Ti and Ti-36Nb-2Ta-3Zr-0.3O increased with heating time and temperature. Microstructural observations indicated that the oxide layer on Ti-29Nb-13Ta-4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O was dense and firm, whereas a piecrust-like layer was formed on CP Ti. The results obtained in this study suggest that oxide layer coating on Ti-36Nb-2Ta-3Zr-0.3O is an excellent technique for dental applications.

Nanometer Scale Confined Growth of Single-Crystalline Gold Nanowires via Photocatalytic Reduction.

PubMed

Lee, Seonhee; Bae, Changdeuck; Shin, Hyunjung

2018-06-20

Single-crystalline gold nanowires (Au NWs) are directly synthesized by the photocatalytic reduction of an aqueous HAuCl 4 solution inside high-aspect-ratio TiO 2 nanotubes (NTs). Crystalline TiO 2 (anatase) NTs are prepared by the template-assisted atomic layer deposition technique with a subsequent annealing. Under the irradiation of ultraviolet light, photoexcited electrons are formed on the surfaces of TiO 2 NTs and could reduce Au ions to create nuclei without using any surfactant, reducing agent, and/or seed. Once nucleation occurred, high-aspect-ratio Au NWs are grown inside the TiO 2 NTs in a diffusion-controlled manner. As the solution pH increased, the nucleation/growth rate decreased and twin-free (or not observed), single-crystalline Au NWs are formed. At a pH above 6, the nucleation/growth rates increased and Au nanoparticles are observed both inside and outside of the TiO 2 NTs. The confined nanoscale geometries of the interior of the TiO 2 NTs are found to play a key role in the controlled diffusion of Au species and in determining the crystal morphology of the resulting Au NWs.

High Sensitivity Refractometer Based on TiO2-Coated Adiabatic Tapered Optical Fiber via ALD Technology

PubMed Central

Zhu, Shan; Pang, Fufei; Huang, Sujuan; Zou, Fang; Guo, Qiang; Wen, Jianxiang; Wang, Tingyun

2016-01-01

Atomic layer deposition (ALD) technology is introduced to fabricate a high sensitivity refractometer based on an adiabatic tapered optical fiber. Different thicknesses of titanium dioxide (TiO2) nanofilm were coated around the tapered fiber precisely and uniformly under different deposition cycles. Attributed to the higher refractive index of the TiO2 nanofilm compared to that of silica, an asymmetric Fabry–Perot (F-P) resonator could be constructed along the fiber taper. The central wavelength of the F-P resonator could be controlled by adjusting the thickness of the TiO2 nanofilm. Such a F-P resonator is sensitive to changes in the surrounding refractive index (SRI), which is utilized to realize a high sensitivity refractometer. The refractometer developed by depositing 50.9-nm-thickness TiO2 on the tapered fiber shows SRI sensitivity as high as 7096 nm/RIU in the SRI range of 1.3373–1.3500. Due to TiO2’s advantages of high refractive index, lack of toxicity, and good biocompatibility, this refractometer is expected to have wide applications in the biochemical sensing field. PMID:27537885

Effect of Nano-TiC Dispersed Particles and Electro-Codeposition Parameters on Morphology and Structure of Hybrid Ni/TiC Nanocomposite Layers.

PubMed

Benea, Lidia; Celis, Jean-Pierre

2016-04-06

This research work describes the effect of dispersed titanium carbide (TiC) nanoparticles into nickel plating bath on Ni/TiC nanostructured composite layers obtained by electro-codeposition. The surface morphology of Ni/TiC nanostructured composite layers was characterized by scanning electron microscopy (SEM). The composition of coatings and the incorporation percentage of TiC nanoparticles into Ni matrix were studied and estimated by using energy dispersive X-ray analysis (EDX). X-ray diffractometer (XRD) has been applied in order to investigate the phase structure as well as the corresponding relative texture coefficients of the composite layers. The results show that the concentration of nano-TiC particles added in the nickel electrolyte affects the inclusion percentage of TiC into Ni/TiC nano strucured layers, as well as the corresponding morphology, relative texture coefficients and thickness indicating an increasing tendency with the increasing concentration of nano-TiC concentration. By increasing the amount of TiC nanoparticles in the electrolyte, their incorporation into nickel matrix also increases. The hybrid Ni/nano-TiC composite layers obtained revealed a higher roughness and higher hardness; therefore, these layers are promising superhydrophobic surfaces for special application and could be more resistant to wear than the pure Ni layers.

Miniature Lightweight Ion Pump

NASA Technical Reports Server (NTRS)

Sinha, Mahadeva P.

2010-01-01

This design offers a larger surface area for pumping of active gases and reduces the mass of the pump by eliminating the additional vacuum enclosure. There are three main components to this ion pump: the cathode and anode pumping elements assembly, the vacuum enclosure (made completely of titanium and used as the cathode and maintained at ground potential) containing the assembly, and the external magnet. These components are generally put in a noble diode (or differential) configuration of the ion pump technology. In the present state of the art, there are two cathodes, one made of titanium and the other of tantalum. The anodes are made up of an array of stainless steel cylinders positioned between the two cathodes. All the elements of the pump are in a vacuum enclosure. After the reduction of pressure in this enclosure to a few microns, a voltage is applied between the cathode and the anode elements. Electrons generated by the ionization are accelerated toward the anodes that are confined in the anode space by the axial magnetic field. For the generation of the axial field along the anode elements, the magnet is designed in a C-configuration and is fabricated from rare earth magnetic materials (Nd-B-Fe or Sm-Co) possessing high energy product values, and the yoke is fabricated from the high permeability material (Hiperco-50A composed of Fe-Co-V). The electrons in this region collide with the gas molecules and generate their positive ions. These ions are accelerated into the cathode and eject cathode material (Ti). The neutral atoms deposit on the anode surfaces. Because of the chemical activity of Ti, the atoms combine with chemically active gas molecules (e.g. N2, O2, etc.) and remove them. New layers of Ti are continually deposited, and the pumping of active gases is thus accomplished. Pumping of the inert gases is accomplished by their burial several atomic layers deep into the cathode. However, they tend to re-emit if the entrapping lattice atoms are sputtered away. For stable pumping of inert gases, one side of the cathode is made of Ta. Impaction on Ta produces energetic, neutral atoms that pump the inert gases on the anode structure at the peripheral areas of the cathodes (between anode rings). For inert gases stability, a post design has been implemented. Here, posts of cathode material (Ti) are mounted on the cathode. These protrude into the initial part of the anode elements. Materials sputtered from the posts condense on the anode assembly and on the cathode plane at higher rates than in the normal diodes due to enhanced sputtering at glancing angles from geometrical considerations. This increases pumping by burial. This post design has enhanced pumping rates for both active and inert gases, compared with conventional designs.

Transition metal nitride coated with atomic layers of Pt as a low-cost, highly stable electrocatalyst for the oxygen reduction reaction

DOE PAGES

Tian, Xinlong; Adzic, Radoslav R.; Luo, Junming; ...

2016-02-10

Here, the main challenges to the commercial viability of polymer electrolyte membrane fuel cells are (i) the high cost associated with using large amounts of Pt in fuel cell cathodes to compensate for the sluggish kinetics of the oxygen reduction reaction, (ii) catalyst degradation, and (iii) carbon-support corrosion. To address these obstacles, our group has focused on robust, carbon-free transition metal nitride materials with low Pt content that exhibit tunable physical and catalytic properties. Here, we report on the high performance of a novel catalyst with low Pt content, prepared by placing several layers of Pt atoms on nanoparticles ofmore » titanium nickel binary nitride. For the ORR, the catalyst exhibited a more than 400% and 200% increase in mass activity and specific activity, respectively, compared with the commercial Pt/C catalyst. It also showed excellent stability/durability, experiencing only a slight performance loss after 10,000 potential cycles, while TEM results showed its structure had remained intact. The catalyst’s outstanding performance may have resulted from the ultrahigh dispersion of Pt (several atomic layers coated on the nitride nanoparticles), and the excellent stability/durability may have been due to the good stability of nitride and synergetic effects between ultrathin Pt layer and the robust TiNiN support.« less