Method of making multilayered titanium ceramic composites

DOEpatents

Fisher, G.T. II; Hansen, J.S.; Oden, L.L.; Turner, P.C.; Ochs, T.L.

1998-08-25

A method making a titanium ceramic composite involves forming a hot pressed powder body having a microstructure comprising at least one titanium metal or alloy layer and at least one ceramic particulate reinforced titanium metal or alloy layer and hot forging the hot pressed body followed by hot rolling to substantially reduce a thickness dimension and substantially increase a lateral dimension thereof to form a composite plate or sheet that retains in the microstructure at least one titanium based layer and at least one ceramic reinforced titanium based layer in the thickness direction of the composite plate or sheet. 3 figs.

Method of making multilayered titanium ceramic composites

DOEpatents

Fisher, George T., II; Hansen; Jeffrey S.; Oden; Laurance L.; Turner; Paul C.; Ochs; Thomas L.

1998-08-25

A method making a titanium ceramic composite involves forming a hot pressed powder body having a microstructure comprising at least one titanium metal or alloy layer and at least one ceramic particulate reinforced titanium metal or alloy layer and hot forging the hot pressed body follwed by hot rolling to substantially reduce a thickness dimension and substantially increase a lateral dimension thereof to form a composite plate or sheet that retains in the microstructure at least one titanium based layer and at least one ceramic reinforced titanium based layer in the thickness direction of the composite plate or sheet.

Method of making multilayered titanium ceramic composites

DOEpatents

Fisher, II, George T.; Hansen, Jeffrey S.; Oden, Laurance L.; Turner, Paul C.; Ochs, Thomas L.

1998-01-01

A method making a titanium ceramic composite involves forming a hot pressed powder body having a microstructure comprising at least one titanium metal or alloy layer and at least one ceramic particulate reinforced titanium metal or alloy layer and hot forging the hot pressed body follwed by hot rolling to substantially reduce a thickness dimension and substantially increase a lateral dimension thereof to form a composite plate or sheet that retains in the microstructure at least one titanium based layer and at least one ceramic reinforced titanium based layer in the thickness direction of the composite plate or sheet.

All-solution-processed PbS quantum dot solar modules

NASA Astrophysics Data System (ADS)

Jang, Jihoon; Shim, Hyung Cheoul; Ju, Yeonkyeong; Song, Jung Hoon; An, Hyejin; Yu, Jong-Su; Kwak, Sun-Woo; Lee, Taik-Min; Kim, Inyoung; Jeong, Sohee

2015-05-01

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01508a

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2005-10-18

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2003-09-09

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Superconducting composite with multilayer patterns and multiple buffer layers

DOEpatents

Wu, Xin D.; Muenchausen, Ross E.

1993-01-01

An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Real-time assessment of surface interactions with titanium passivation layer by surface plasmon resonance

PubMed Central

Hirata, Isao; Yoshida, Yasuhiro; Nagaoka, Noriyuki; Hiasa, Kyou; Abe, Yasuhiko; Maekawa, Kenji; Kuboki, Takuo; Akagawa, Yasumasa; Suzuki, Kazuomi; Van Meerbeek, Bart; Messersmith, Phillip B.; Okazaki, Masayuki

2011-01-01

The high corrosion resistance and strength-to-density ratio makes titanium widely used in major industry, but also in a gamut of medical applications. Here we report for the first time on our development of a titanium passivation layer sensor that makes use of surface plasmon resonance (SPR). The deposited titanium metal layer on the sensor was passivated in air, like titanium medical devices. Our ‘Ti-SPR sensor’ enables analysis of biomolecules interactions with the passivated surface of titanium in real time. As a proof of concept, corrosion of titanium passivation layer exposed to acid was monitored in real time. Also, the Ti-SPR sensor can accurately measure the time-dependence of protein adsorption onto titanium passivation layer with a sub-nanogram per square millimeter accuracy. Besides such SPR analyses, an SPR-imaging (SPRI) enables real-time assessment of chemical surface processes that occur simultaneously at ‘multiple independent spots’ on the Ti-SPR sensor, such as acid-corrosion or adhesion of cells. Our Ti-SPR sensor will therefore be very useful to study titanium-corrosion phenomena and biomolecular titanium-surface interactions with application in a broad range of industrial and biomedical fields. PMID:22154862

Effect of TiO2 modification with amino-based self-assembled monolayer on inverted organic solar cell

NASA Astrophysics Data System (ADS)

Tozlu, Cem; Mutlu, Adem; Can, Mustafa; Havare, Ali Kemal; Demic, Serafettin; Icli, Sıddık

2017-11-01

The effects of surface modification of titanium dioxide (TiO2) on the performance of inverted type organic solar cells (i-OSCs) was investigated in this study. A series of benzoic acid derivatized self-assembled monolayer (SAM) molecules of 4‧-[(hexyloxy)phenyl]amino-3,5-biphenyl dicarboxylic acid (CT17) and 4‧-[1-naphthyl (phenyl)amino]biphenyl-4-carboxylic acid (CT19) were utilized to modify the interface between TiO2 buffer layer and poly-3 hexylthiophene (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PC61BM) active layer having the device structure of ITO/TiO2/SAM/P3HT:PC61BM/MoO3/Ag. The work function and surface wetting properties of TiO2 buffer layer served as electron transporting layer between ITO and PC61BM active layer were tuned by SAM method. The solar cell of the SAM modified devices exhibited better performance. The power conversion efficiency (PCE) of i-OSCs devices with bare TiO2 electrodes enhanced from 2.00% to 2.21% and 2.43% with CT17 and CT19 treated TiO2 electrodes, respectively. The open circuit voltage (Voc) of the SAM treated TiO2 devices reached to 0.60 V and 0.61 V, respectively, while the Voc of untreated TiO2 was 0.57 V. The water contact angle of i-OSCs with CT17 and CT19 SAMs was also higher than the value of the unmodified TiO2 electrode. These results show that inserting a monolayer at the interface between organic and inorganic layers is an useful alternative method to improve the performance of i-OSCs.

Conversion treatment of thin titanium layer deposited on carbon steel

NASA Astrophysics Data System (ADS)

Benarioua, Younes; Wendler, Bogdan; Chicot, Didier

2018-05-01

The present study has been conducted in order to obtain titanium carbide layer using a conversion treatment consisting of two main steps. In the first step a thin pure titanium layer was deposited on 120C4 carbon steel by PVD. In the second step, the carbon atoms from the substrate diffuse to the titanium coating due to a vacuum annealing treatment and the Ti coating transforms into titanium carbide. Depending on the annealing temperature a partial or complete conversion into TiC is obtained. The hardness of the layer can be expected to differ depending on the processing temperatures. By a systematic study of the hardness as a function of the applied load, we confirm the process of growth of the layer.

Mesoporous titanosilicates with high loading of titanium synthesized in mild acidic buffer solution.

PubMed

Tang, Jianting; Liu, Jian; Yang, Jie; Feng, Zhaochi; Fan, Fengtao; Yang, Qihua

2009-07-15

Mesoporous titanosilicates with high titanium content were synthesized under mild acidic conditions (pH=4.4, HAc-NaAc buffer solution) by co-condensation of acetylacetone-modified titanium isopropoxide (Ti(OBu(n))(3) (acac)) and mixture of sodium silicate with tetramethoxysilane (TMOS) or tetraethoxysilane (TEOS) or tetrakis(2-hydroxyethyl)orthosilicate (EGMS), using block copolymer Pluronic P123 as template. The combined results of XRD, N(2) sorption and TEM show that the highly regular structure of the mesoporous titanosilicates can still be obtained when Ti/Si molar ratio in the final product is as high as 0.059. The results of UV-vis diffuse reflectance spectra and UV resonance Raman spectra show that the framework titanium species are predominant in the mesoporous titanosilicates when Ti/Si molar ratio in the final product is less than 0.042. The mixture of sodium silicate and EGMS was proved to be the best silicon source for the synthesis of titanosilicates with ordered mesostructure and high titanium content. The efficiency of this synthetic method may be attributed to the mild acidic medium as well as the modified hydrolysis-condensation rate and hydrophility of the precursors.

Surface Modification of Dental Titanium Implant by Layer-by-Layer Electrostatic Self-Assembly

PubMed Central

Shi, Quan; Qian, Zhiyong; Liu, Donghua; Liu, Hongchen

2017-01-01

In vivo implants that are composed of titanium and titanium alloys as raw materials are widely used in the fields of biology and medicine. In the field of dental medicine, titanium is considered to be an ideal dental implant material. Good osseointegration and soft tissue closure are the foundation for the success of dental implants. Therefore, the enhancement of the osseointegration and antibacterial abilities of titanium and its alloys has been the focus of much research. With its many advantages, layer-by-layer (LbL) assembly is a self-assembly technique that is used to develop multilayer films based on complementary interactions between differently charged polyelectrolytes. The LbL approach provides new methods and applications for the surface modification of dental titanium implant. In this review, the application of the LbL technique to surface modification of titanium including promoting osteogenesis and osseointegration, promoting the formation and healing of soft tissues, improving the antibacterial properties of titanium implant, achieving local drug delivery and sustained release is summarized. PMID:28824462

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystallinemore » II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

The Growth Behavior of Titanium Boride Layers in α and β Phase Fields of Titanium

NASA Astrophysics Data System (ADS)

Lv, Xiaojun; Hu, Lingyun; Shuang, Yajing; Liu, Jianhua; Lai, Yanqing; Jiang, Liangxing; Li, Jie

2016-07-01

In this study, the commercially pure titanium was successfully electrochemical borided in a borax-based electrolyte. The process was carried out at a constant cathodic current density of 300 mA cm-2 and at temperatures of 1123 K and 1223 K (850 °C and 950 °C) for 0.5, 1, 2, 3, and 5 hours. The growth behavior of titanium boride layers in the α phase field of titanium was compared with that in the β phase field. After boriding, the presence of both the TiB2 top layer and TiB whisker sub-layer was confirmed by the X-ray diffraction (XRD) and scanning electron microscope. The relationship between the thickness of boride layers and boriding time was found to have a parabolic character in both α and β phase fields of titanium. The TiB whiskers showed ultra-fast growth rate in the β phase field. Its growth rate constant was found to be as high as 3.2002 × 10-13 m2 s-1. Besides, the chemical resistance of the TiB2 layer on the surface of titanium substrate was characterized by immersion tests in molten aluminum.

Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

DOEpatents

Ishida, Emi [Sunnyvale, CA

1999-08-10

A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

NASA Technical Reports Server (NTRS)

Wang, Y. C.; Bahrami, M.

1983-01-01

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Chitosan-58S bioactive glass nanocomposite coatings on TiO2 nanotube: Structural and biological properties

NASA Astrophysics Data System (ADS)

Mokhtari, H.; Ghasemi, Z.; Kharaziha, M.; Karimzadeh, F.; Alihosseini, F.

2018-05-01

Bacterial infection and insignificant osseointegration have been recognized as the main reasons of the failures of titanium based implants. The aim of this study was to apply titanium oxide nanotube (TNT) array on titanium using electrochemical anodization process as a more appropriate substrate for chitosan and chitosan-58S bioactive glass (BG) (58S-BG-Chitosan) nanocomposite coatings covered TNTs (TNT/Chiosan, TNT/58S-BG-Chitosan, respectively) through a conventional dip-coating process. Results showed that a TNT layer with average inner diameter of 82 ± 19 nm and wall's thickness of 23 ± 9 nm was developed on titanium surface using electrochemical anodization process. Roughness and contact angle measurement showed that TNT with Ra = 449 nm had highest roughness and hydrophilicity which then reduced to 86 nm and 143 nm for TNT/Chitosan and TNT/58S-BG-Chitosan, respectively. In vitro bioactivity evaluation in simulated buffer fluid (SBF) solution and antibacterial activity assay predicted that TNT/58S-BG-Chitosan was superior in bone like apatite formation and antibacterial activity against both gram-positive and gram-negative bacteria compared to Ti, TNT and TNT/Chitosan samples, respectively. Results revealed the noticeable MG63 cell attachment and proliferation on TNT/58S-BG-Chitosan coating compared to those of uncoated TNTs. These results confirmed the positive effect of using TNT substrate for natural polymer coating on improved bioactivity of implant.

Back contact buffer layer for thin-film solar cells

DOEpatents

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Titanium aluminide intermetallic alloys with improved wear resistance

DOEpatents

Qu, Jun; Lin, Hua-Tay; Blau, Peter J.; Sikka, Vinod K.

2014-07-08

The invention is directed to a method for producing a titanium aluminide intermetallic alloy composition having an improved wear resistance, the method comprising heating a titanium aluminide intermetallic alloy material in an oxygen-containing environment at a temperature and for a time sufficient to produce a top oxide layer and underlying oxygen-diffused layer, followed by removal of the top oxide layer such that the oxygen-diffused layer is exposed. The invention is also directed to the resulting oxygen-diffused titanium aluminide intermetallic alloy, as well as mechanical components or devices containing the improved alloy composition.

Doped LZO buffer layers for laminated conductors

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

2010-03-23

A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

Effect of hot water and heat treatment on the apatite-forming ability of titania films formed on titanium metal via anodic oxidation in acetic acid solutions.

PubMed

Cui, Xinyu; Kim, Hyun-Min; Kawashita, Masakazu; Wang, Longbao; Xiong, Tianying; Kokubo, Tadashi; Nakamura, Takashi

2008-04-01

Titanium and its alloys have been widely used for orthopedic implants because of their good biocompatibility. We have previously shown that the crystalline titania layers formed on the surface of titanium metal via anodic oxidation can induce apatite formation in simulated body fluid, whereas amorphous titania layers do not possess apatite-forming ability. In this study, hot water and heat treatments were applied to transform the titania layers from an amorphous structure into a crystalline structure after titanium metal had been anodized in acetic acid solution. The apatite-forming ability of titania layers subjected to the above treatments in simulated body fluid was investigated. The XRD and SEM results indicated hot water and/or heat treatment could greatly transform the crystal structure of titania layers from an amorphous structure into anatase, or a mixture of anatase and rutile. The abundance of Ti-OH groups formed by hot water treatment could contribute to apatite formation on the surface of titanium metals, and subsequent heat treatment would enhance the bond strength between the apatite layers and the titanium substrates. Thus, bioactive titanium metals could be prepared via anodic oxidation and subsequent hot water and heat treatment that would be suitable for applications under load-bearing conditions.

Oxygen-Barrier Coating for Titanium

NASA Technical Reports Server (NTRS)

Clark, Ronald K.; Unnam, Jalaiah

1987-01-01

Oxygen-barrier coating for titanium developed to provide effective and low-cost means for protecting titanium alloys from oxygen in environment when alloys used in high-temperature mechanical or structural applications. Provides protective surface layer, which reduces extent of surface oxidation of alloy and forms barrier to diffusion of oxygen, limiting contamination of substrate alloy by oxygen. Consists of submicron layer of aluminum deposited on surface of titanium by electron-beam evaporation, with submicron layer of dioxide sputtered onto aluminum to form coat.

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

NASA Astrophysics Data System (ADS)

Hidalgo, J. A.; Montero-Ocampo, C.; Cuberes, M. T.

2009-12-01

Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed to softer substoichiometric titanium nitride species and/or trapped subsurface gas. The results show that increasing the sputtering power at the Ti cathode increases the elastic homogeneity of the titanium nitride layers on the nanometer scale. Ultrasonic force microscopy elastic mapping on titanium nitride layers demonstrates the capability of the technique to provide information of high value for the engineering of improved coatings.

Surface Characterization of an Organized Titanium Dioxide Layer

NASA Astrophysics Data System (ADS)

Curtis, Travis

Soft lithographic printing techniques can be used to control the surface morphology of titanium dioxide layers on length scales of several hundred nanometers. Controlling surface morphology and volumetric organization of titanium dioxide electrodes can potentially be used in dye-sensitized solar cell devices. This thesis explores how layer-by-layer replication can lead to well defined, dimensionally controlled volumes and details how these control mechanisms influence surface characteristics of the semiconducting oxide.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

NASA Astrophysics Data System (ADS)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Photo-induced wettability of TiO{sub 2} film with Au buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam

2014-04-24

The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Yu, Zhi-nong; Zhao, Jian-jian; Xia, Fan; Lin, Ze-jiang; Zhang, Dong-pu; Leng, Jian; Xue, Wei

2011-03-01

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

Buffer architecture for biaxially textured structures and method of fabricating same

DOEpatents

Norton, David P.; Park, Chan; Goyal, Amit

2004-04-06

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Investigation of titanium-nitride layers for solar-cell contacts

NASA Technical Reports Server (NTRS)

Von Seefeld, H.; Cheung, N. W.; Nicolet, M.-A.; Maenpaa, M.

1980-01-01

Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon. Backscattering analysis (2-MeV He/+/, RBS) indicates that the integrity of the system is basically preserved during annealing at 600 C for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (less than 5 at %) a resistivity of 170 microohms/cm has been found.

Improving Osteoblast Response In Vitro by a Nanostructured Thin Film with Titanium Carbide and Titanium Oxides Clustered around Graphitic Carbon.

PubMed

Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Misiano, Carlo; Zanoni, Robertino; Politi, Laura; Mazzola, Luca; Iosi, Francesca; Mura, Francesco; Scandurra, Roberto

2016-01-01

Recently, we introduced a new deposition method, based on Ion Plating Plasma Assisted technology, to coat titanium implants with a thin but hard nanostructured layer composed of titanium carbide and titanium oxides, clustered around graphitic carbon. The nanostructured layer has a double effect: protects the bulk titanium against the harsh conditions of biological tissues and in the same time has a stimulating action on osteoblasts. The aim of this work is to describe the biological effects of this layer on osteoblasts cultured in vitro. We demonstrate that the nanostructured layer causes an overexpression of many early genes correlated to proteins involved in bone turnover and an increase in the number of surface receptors for α3β1 integrin, talin, paxillin. Analyses at single-cell level, by scanning electron microscopy, atomic force microscopy, and single cell force spectroscopy, show how the proliferation, adhesion and spreading of cells cultured on coated titanium samples are higher than on uncoated titanium ones. Finally, the chemistry of the layer induces a better formation of blood clots and a higher number of adhered platelets, compared to the uncoated cases, and these are useful features to improve the speed of implant osseointegration. In summary, the nanostructured TiC film, due to its physical and chemical properties, can be used to protect the implants and to improve their acceptance by the bone.

Modification of surface oxide layers of titanium targets for increasing lifetime of neutron tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharov, A. M., E-mail: zam@plasma.mephi.ru; Dvoichenkova, O. A.; Evsin, A. E.

The peculiarities of interaction of hydrogen ions with a titanium target and its surface oxide layer were studied. Two ways of modification of the surface oxide layers of titanium targets for increasing the lifetime of neutron tubes were proposed: (1) deposition of an yttrium oxide barrier layer on the target surface; (2) implementation of neutron tube work regime in which the target is irradiated with ions with energies lower than 1000 eV between high-energy ion irradiation pulses.

Thin film photovoltaic devices with a minimally conductive buffer layer

DOEpatents

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakashima, Kiichi; Sugiura, Hideo

1997-08-01

The relaxation process in InAsP/InGaAsP strained-layer superlattices (SLSs) with interfacial misfit dislocations has been investigated systematically by transmission electron microscopy (TEM) and x-ray analyses. The TEM analysis reveals that dislocations locate a little inside the buffer layer near the interface between the buffer and first well layer in the SLS. The x-ray analysis of (400) azimuthal angle dependence indicates the buffer layer has a large macroscopic tilt. Using a curve fitting analysis of various (hkl) x-ray profiles and reciprocal lattice mapping measurements, residual strain was determined quantitatively, i.e., Δa∥ and Δa⊥, in the SLS and buffer layer. These results reveal that the dislocations mainly cause lattice distortion of the buffer layer rather than relaxation of the SLS layer. The most remarkable result is that the change of a∥ is not equal to that of a⊥ in the buffer layer. This phenomenon strongly suggests that microplastic domains are generated in the buffer layer.

The preparation and the sustained release of titanium dioxide hollow particles encapsulating L-ascorbic acid

NASA Astrophysics Data System (ADS)

Tominaga, Yoko; Kadota, Kazunori; Shimosaka, Atsuko; Yoshida, Mikio; Oshima, Kotaro; Shirakawa, Yoshiyuki

2018-05-01

The preparation of the titanium dioxide hollow particles encapsulating L-ascorbic acid via sol-gel process using inkjet nozzle has been performed, and the sustained release and the effect protecting against degradation of L-ascorbic acid in the particles were investigated. The morphology of titanium dioxide particles was evaluated by scanning electron microscopy (SEM) and energy dispersive X-ray spectrometry (EDS). The sustained release and the effect protecting against degradation of L-ascorbic acid were estimated by dialysis bag method in phosphate buffer saline (PBS) (pH = 7.4) as release media. The prepared titanium dioxide particles exhibited spherical porous structures. The particle size distribution of the titanium dioxide particles was uniform. The hollow titanium dioxide particles encapsulating L-ascorbic acid showed the sustained release. It was also found that the degradation of L-ascorbic acid could be inhibited by encapsulating L-ascorbic acid in the titanium dioxide hollow particles.

Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

2007-08-21

A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

All-solution-processed PbS quantum dot solar modules.

PubMed

Jang, Jihoon; Shim, Hyung Cheoul; Ju, Yeonkyeong; Song, Jung Hoon; An, Hyejin; Yu, Jong-Su; Kwak, Sun-Woo; Lee, Taik-Min; Kim, Inyoung; Jeong, Sohee

2015-05-21

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm(2), exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm(2) unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.

Processing of hydroxylapatite coatings on titanium alloy bone prostheses

DOEpatents

Nastasi, M.A.; Levine, T.E.; Mayer, J.W.; Pizziconi, V.B.

1998-10-06

Processing of hydroxylapatite sol-gel films on titanium alloy bone prostheses. A method utilizing non-line-of-sight ion beam implantation and/or rapid thermal processing to provide improved bonding of layers of hydroxylapatite to titanium alloy substrates while encouraging bone ingrowth into the hydroxylapatite layers located away from the substrate, is described for the fabrication of prostheses. The first layer of hydroxylapatite is mixed into the substrate by the ions or rapidly thermally annealed, while subsequent layers are heat treated or densified using ion implantation to form layers of decreasing density and larger crystallization, with the outermost layers being suitable for bone ingrowth.

Processing of hydroxylapatite coatings on titanium alloy bone prostheses

DOEpatents

Nastasi, Michael A.; Levine, Timothy E.; Mayer, James W.; Pizziconi, Vincent B.

1998-01-01

Processing of hydroxylapatite sol-gel films on titanium alloy bone prostheses. A method utilizing non-line-of-sight ion beam implantation and/or rapid thermal processing to provide improved bonding of layers of hydroxylapatite to titanium alloy substrates while encouraging bone ingrowth into the hydroxylapatite layers located away from the substrate, is described for the fabrication of prostheses. The first layer of hydroxylapatite is mixed into the substrate by the ions or rapidly thermally annealed, while subsequent layers are heat treated or densified using ion implantation to form layers of decreasing density and larger crystallization, with the outermost layers being suitable for bone ingrowth.

Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

DOEpatents

Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Surface modified stainless steels for PEM fuel cell bipolar plates

DOEpatents

Brady, Michael P [Oak Ridge, TN; Wang, Heli [Littleton, CO; Turner, John A [Littleton, CO

2007-07-24

A nitridation treated stainless steel article (such as a bipolar plate for a proton exchange membrane fuel cell) having lower interfacial contact electrical resistance and better corrosion resistance than an untreated stainless steel article is disclosed. The treated stainless steel article has a surface layer including nitrogen-modified chromium-base oxide and precipitates of chromium nitride formed during nitridation wherein oxygen is present in the surface layer at a greater concentration than nitrogen. The surface layer may further include precipitates of titanium nitride and/or aluminum oxide. The surface layer in the treated article is chemically heterogeneous surface rather than a uniform or semi-uniform surface layer exclusively rich in chromium, titanium or aluminum. The precipitates of titanium nitride and/or aluminum oxide are formed by the nitriding treatment wherein titanium and/or aluminum in the stainless steel are segregated to the surface layer in forms that exhibit a low contact resistance and good corrosion resistance.

Active Materials for Photonic Systems (AMPS)

DTIC Science & Technology

1998-04-13

titanium isopropoxide were used as metalorganic precursors. The PZT films grown on the (101) oriented Ru02 electrode layers are highly (001) oriented...fabrication it was noted mat adhesion loss occurred at the platinum/ titanium interface. This loss occurred during stripping of the photoresist layer used to...reveal that the titanium was present as titanium dioxide rather than as the original metal. This indicated that oxygen had diffused through the platinum

Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

NASA Astrophysics Data System (ADS)

Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

2011-01-01

Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

Improving Osteoblast Response In Vitro by a Nanostructured Thin Film with Titanium Carbide and Titanium Oxides Clustered around Graphitic Carbon

PubMed Central

Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d’Abusco, Anna; Superti, Fabiana; Misiano, Carlo; Zanoni, Robertino; Politi, Laura; Mazzola, Luca; Iosi, Francesca; Mura, Francesco; Scandurra, Roberto

2016-01-01

Introduction Recently, we introduced a new deposition method, based on Ion Plating Plasma Assisted technology, to coat titanium implants with a thin but hard nanostructured layer composed of titanium carbide and titanium oxides, clustered around graphitic carbon. The nanostructured layer has a double effect: protects the bulk titanium against the harsh conditions of biological tissues and in the same time has a stimulating action on osteoblasts. Results The aim of this work is to describe the biological effects of this layer on osteoblasts cultured in vitro. We demonstrate that the nanostructured layer causes an overexpression of many early genes correlated to proteins involved in bone turnover and an increase in the number of surface receptors for α3β1 integrin, talin, paxillin. Analyses at single-cell level, by scanning electron microscopy, atomic force microscopy, and single cell force spectroscopy, show how the proliferation, adhesion and spreading of cells cultured on coated titanium samples are higher than on uncoated titanium ones. Finally, the chemistry of the layer induces a better formation of blood clots and a higher number of adhered platelets, compared to the uncoated cases, and these are useful features to improve the speed of implant osseointegration. Conclusion In summary, the nanostructured TiC film, due to its physical and chemical properties, can be used to protect the implants and to improve their acceptance by the bone. PMID:27031101

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

PubMed

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Comparison of Environmental Scanning Electron Microscopy in Low Vacuum or wet mode for the investigation of cell biomaterial interactions.

PubMed

Mattarozzi, Monica; Manfredi, Edoardo; Lorenzi, Andrea; Smerieri, Arianna; Di Blasio, Alberto; Macaluso, Guido; Lumetti, Simone; Galli, Carlo

2016-05-06

The aim of the present study was to investigate the efficacy of environmental scanning electron microscopy (ESEM), in low vacuum mode (LV-ESEM) and in wet mode (wet-ESEM) in the assessment of cell-material interactions. Mouse calvaria MC3T3 cells (ATCC) were seeded on commercially pure machined titanium discs of 10 mm diameter in Dulbecco modified MEM, 10% Fetal Bovine Serum, 1% Penicillin and Streptomycin and 1% Glutamine. Samples were then processed for microscope observation by rinse in Phosphate Buffer saline and fixation in 4.5% Glutaraldehyde. Samples were then rinsed in Sodium Cacodylate buffer and observed or dehydrated in alcohol prior to LV-ESEM observation. Fresh samples in 0.9% NaCl solution were observed in wet- ESEM. No significant loss of detail was observed when dehydrated or non dehydrated samples were analysed at LV-ESEM.The observation of fresh samples in wet-ESEM however proved difficult for the need to eliminate water which forms a layer covering the sample, thus hiding cell surface details. When reducing the vapor pressure in the chamber, the layer evaporated and NaCl immediately started to precipitate and cells collapsed, thus no further investigation was possible. The use of low vacuum-ESEM after cell fixation, but without dehydration or gold sputter coating proved a viable alternative to traditional high vacuum SEM observation.

Tribological Properties of Surface-Textured and Plasma-Nitrided Pure Titanium Under Oil Lubrication Condition

NASA Astrophysics Data System (ADS)

Zhang, Baosen; Dong, Qiangsheng; Ba, Zhixin; Wang, Zhangzhong; Shi, Hancheng; Xue, Yanting

2018-01-01

Plasma nitriding was conducted as post-treatment for surface texture on pure titanium to obtain a continuous nitriding layer. Supersonic fine particles bombarding (SFPB) was carried out to prepare surface texture. The surface morphologies and chemical composition were analyzed using scanning electron microscope and energy disperse spectroscopy. The microstructures of modified layers were characterized by transmission electron microscope. The tribological properties of surface-textured and duplex-treated pure titanium under oil lubrication condition were systematically investigated in the ball-on-plate reciprocating mode. The effects of applied load and sliding velocity on the tribological behavior were analyzed. The results show that after duplex treatments, the grains size in modified layer becomes slightly larger, and hardness is obviously improved. Wear resistance of duplex-treated pure titanium is significantly improved referenced to untreated and surface-textured pure titanium, which is 3.22 times as much as untreated pure titanium and 2.15 times of that for surface-textured pure titanium, respectively.

Effect of cathodic polarization on coating doxycycline on titanium surfaces.

PubMed

Geißler, Sebastian; Tiainen, Hanna; Haugen, Håvard J

2016-06-01

Cathodic polarization has been reported to enhance the ability of titanium based implant materials to interact with biomolecules by forming titanium hydride at the outermost surface layer. Although this hydride layer has recently been suggested to allow the immobilization of the broad spectrum antibiotic doxycycline on titanium surfaces, the involvement of hydride in binding the biomolecule onto titanium remains poorly understood. To gain better understanding of the influence this immobilization process has on titanium surfaces, mirror-polished commercially pure titanium surfaces were cathodically polarized in the presence of doxycycline and the modified surfaces were thoroughly characterized using atomic force microscopy, electron microscopy, secondary ion mass spectrometry, and angle-resolved X-ray spectroscopy. We demonstrated that no hydride was created during the polarization process. Doxycycline was found to be attached to an oxide layer that was modified during the electrochemical process. A bacterial assay using bioluminescent Staphylococcus epidermidis Xen43 showed the ability of the coating to reduce bacterial colonization and planktonic bacterial growth. Copyright © 2016 Elsevier B.V. All rights reserved.

Perovskite Solar Cells for High-Efficiency Tandems

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGehee, Michael; Buonassisi, Tonio

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n ++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm 2. Werner et al. 15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher currentmore » density of 15.9 mA/cm 2. It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both organic cation evolution and moisture penetration to overcome the often-reported thermal and environmental instability of metal halide perovskites. Previous perovskite-containing tandems utilized molybdenum oxide (MoO x) as a sputter buffer layer, but this has raised concerns over long-term stability, as the iodide in the perovskite can chemically react with MoO x. Mixed-cation perovskite solar cells have consistently outperformed their single-cation counterparts. The first perovskite device to exceed 20% PCE was fabricated with a mixture of methylammonium (MA) and formamidinium (FA). Recent reports have shown promising results with the introduction of cesium mixtures, enabling high efficiencies with improved photo-, moisture, and thermal stability. The increased moisture and thermal stability are especially important as they broaden the parameter space for processing on top of the perovskite, enabling the deposition of metal oxide contacts through atomic layer deposition (ALD) or chemical vapor deposition (CVD) that may require elevated temperatures or water as a counter reagent. Both titanium dioxide (TiO 2) and tin oxide (SnO 2) have consistently proven to be effective electron-selective contacts for perovskite solar cells and both can be deposited via ALD at temperatures below 150 °C. We introduced a bilayer of SnO 2 and zinc tin oxide (ZTO) that can be deposited by either low-temperature ALD or pulsed-CVD as a window layer with minimal parasitic absorption, efficient electron extraction, and sufficient buffer properties to prevent the organic and perovskite layers from damage during the subsequent sputter deposition of a transparent ITO electrode. We explored pulsed-CVD as a modified ALD process with a continual, rather than purely step-wise, growth component in order to considerably reduce the process time of the SnO 2 deposition process and minimize potential perovskite degradation. These layers, when used in an excellent mixed-cation perovskite solar cell atop a silicon solar cell tuned to the infrared spectrum, enable highly efficient perovskite-silicon tandem solar cells with enhanced thermal and environmental stability.« less

Mitigation of substrate defects in reticles using multilayer buffer layers

DOEpatents

Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

2001-01-01

A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Buffer layers for REBCO films for use in superconducting devices

DOEpatents

Goyal, Amit; Wee, Sung-Hun

2014-06-10

A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

Improved Mechanical Compatibility and Cytocompatibility of Ta/Ti Double-Layered Composite Coating

NASA Astrophysics Data System (ADS)

Ding, Ding; Xie, Youtao; Li, Kai; Huang, Liping; Zheng, Xuebin

2017-08-01

In order to improve the mechanical compatibility and cytocompatibility of titanium implants, a composite coating with double layers composed of tantalum and titanium was designed and prepared using plasma spraying technology. In the composite coating, the upper tantalum layer provides a good biocompatibility, and the sublayer of titanium with a porous structure ensures the low elastic modulus. Results show that the fabricated composite coating exhibits a relatively low elastic modulus of 26.7 GPa, which is close to the elastic modulus of human cortical bone. In vitro cytocompatibility evaluation of the composite coating shows that the human bone marrow stromal cells exhibit enhanced adhesion and spreading performance on the double-layered composite coating in comparison with the single-layered titanium coating. In order to eliminate the misgivings of chemical stability of the composite coating in clinical application, electrochemical corrosion of the coating was examined. The results obtained revealed a very weak galvanic corrosion between the tantalum and titanium in the composite coating, which would ensure the safety of the coating in vivo.

Reaction layer characterization of the braze joint of silicon nitride to stainless steel

NASA Astrophysics Data System (ADS)

Xu, R.; Indacochea, J. E.

1994-10-01

This investigation studies the role of titanium in the development of the reaction layer in braze joining silicon nitride to stainless steel using titanium-active copper-silver filler metals. This reaction layer formed as a result of titanium diffusing to the filler metal/silicon nitride interface and reacting with the silicon nitride to form the intermetallics, titanium nitride (TiN) and titanium suicide (Ti 5Si3). This reaction layer, as recognized in the literature, allows wetting of the ceramic substrate by the molten filler metal. The reaction layer thickness increases with temperature and time. Its growth rate obeys the parabolic relationship. Activation energies of 220.1 and 210.9 kj/mol were calculated for growth of the reaction layer for the two filler metals used. These values are close to the activation energy of nitrogen in TiN (217.6 kj/mol). Two filler metals were used in this study, Ticusil (68.8 wt% Ag, 26.7 wt% Cu, 4.5 wt% Ti) and CB4 (70.5 wt% Ag, 26.5 wt% Cu, 3.0 wt% Ti). The joints were processed in vacuum at temperatures of 840 to 900 °C at various times. Bonding strength is affected by reaction layer thickness in the absence of Ti-Cu intermetallics in the filler metal matrix.

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE PAGES

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.; ...

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Color Anodizing of Titanium Coated Rolled Carbon Steel Plate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarajan, Zohair; Mobarakeh, Hooman Nikbakht; Namiranian, Sohrab

As an important kind of structural materials, the titanium cladded steel plates have the advantages of both metals and have been applied in aviation, spaceflight, chemical and nuclear industries. In this study, the specimens which were prepared under soldering mechanism during rolling were anodized by electrochemical process under a given conditions. The color anodizing takes place by physical phenomenon of color interference. Part of incident light on the titanium oxide is reflected and the other part reflects inside coated titanium layer. Major part of the light which reflects from titanium-oxide interface, reflects again inside of the oxide layer.

Bacterial colonization on coated and uncoated orthodontic wires: A prospective clinical trial.

PubMed

Raji, Seyed Hamid; Shojaei, Hasan; Ghorani, Parinaz Saeidi; Rafiei, Elahe

2014-11-01

The advantages of coated orthodontic wires such as esthetic and their effects on reduced friction, corrosion and allergic reaction and the significant consequences of plaque accumulation on oral health encouraged us to assess bacterial colonization on these wires. A total of 18 (9 upper and 9 lower) epoxy resin coated 16 × 22 nickel-titanium wires (Spectra, GAC, USA) and 18 (9 upper and 9 lower) non-coated 16 × 22 nickel-titanium wires (Sentalloy, GAC, USA) with isolated packages were selected and sterilized before application. The samples were divided randomly between upper and lower arches in 18 patients and hence that every patient received one coated and one uncoated wire at the same time. Samples were removed and cut in equal lengths after 3 weeks and placed in phosphate buffered saline buffer. After separation of bacteria in trypsin and ethylenediaminetetraacetic acid solution, the diluted solution was cultured in blood agar and bacterial colony forming units were counted. Finally, the data was analyzed using the paired t-test and the significance was set at 0.05. Mean of bacterial colonization on uncoated wires was more than that of coated wires (P < 0.001). Bacterial plaque accumulation on epoxy resin coated nickel-titanium orthodontic wires is significantly lower than uncoated nickel-titanium wires.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2006-10-31

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2010-06-15

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

On buffer layers as non-reflecting computational boundaries

NASA Technical Reports Server (NTRS)

Hayder, M. Ehtesham; Turkel, Eli L.

1996-01-01

We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate.

PubMed

Zhang, Min; Guo, Zuoxing; Zhao, Liang; Yang, Shen; Zhao, Lei

2018-06-08

In 0.82 Ga 0.18 As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In 0.82 Ga 0.18 As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In 0.82 Ga 0.18 As buffer layer. By introducing the graded In x Ga 1−x As buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In 0.82 Ga 0.18 As/In 0.82 Al 0.18 As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

Welding of titanium and stainless steel using the composite insert

NASA Astrophysics Data System (ADS)

Cherepanov, A. N.; Mali, V. I.; Orishich, A. M.; Malikov, A. G.; Drozdov, V. O.; Malyutina, Y. N.

2016-11-01

The paper concerns the possibility of obtaining a lasting permanent joint of dissimilar metals: technically pure titanium and stainless steel using laser welding and an intermediate composite insert. The insert was a four-layer composition of plates of steel, copper, niobium, and titanium welded by explosion. The material layers used in the insert prevented the molten steel and titanium from mixing, which excluded the formation of brittle intermetallic compounds, such as FeTi and Fe2Ti. The optimization of explosion welding parameters provided a high quality of the four-layer composition and the absence of defects in the area of the joint of insert plates. The results of strength tests showed that values of the ultimate strength and yield of the permanent joint with the composite insert welded by explosion are comparable to the strength characteristics of titanium.

Dimensional accuracy and surface property of titanium casting using gypsum-bonded alumina investment.

PubMed

Yan, Min; Takahashi, Hidekazu; Nishimura, Fumio

2004-12-01

The aim of the present study was to evaluate the dimensional accuracy and surface property of titanium casting obtained using a gypsum-bonded alumina investment. The experimental gypsum-bonded alumina investment with 20 mass% gypsum content mixed with 2 mass% potassium sulfate was used for five cp titanium castings and three Cu-Zn alloy castings. The accuracy, surface roughness (Ra), and reaction layer thickness of these castings were investigated. The accuracy of the castings obtained from the experimental investment ranged from -0.04 to 0.23%, while surface roughness (Ra) ranged from 7.6 to 10.3microm. A reaction layer of about 150 microm thickness under the titanium casting surface was observed. These results suggested that the titanium casting obtained using the experimental investment was acceptable. Although the reaction layer was thin, surface roughness should be improved.

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

NASA Technical Reports Server (NTRS)

1988-01-01

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Design of a hybrid As₂S₃-Ti:LiNbO₃ optical waveguide for phase-matched difference frequency generation at mid-infrared.

PubMed

Wang, Xin; Madsen, Christi K

2014-11-03

Based on arsenic tri-sulfide films on titanium-diffused lithium niobate, we designed a hybrid optical waveguide for efficient mid-infrared emission by phase-matched difference frequency generation (DFG). The hybrid waveguide structure possesses a low-index magnesium fluoride buffer layer sandwiched between two high-index As(2)S(3) slabs, so that pump and signal waves are tightly confined by titanium-diffused waveguide while the DFG output idler wave at mid-infrared is confined by the whole hybrid waveguide structure. On a 1 mm-long hybrid waveguide pumped at 50 mW powers, a normalized power conversion efficiency of 20.52%W(-1)cm(-2) was theoretically predicted, which is the highest record for mid-infrared DFG waveguides based on lithium niobate crystal, to the best of our knowledge. Using a tunable near-infrared pump laser at 1.38-1.47 µm or a tunable signal laser at 1.95-2.15 µm, a broad mid-infrared tuning range from 4.0 µm to 4.9 µm can be achieved. Such hybrid optical waveguides are feasible for mid-infrared emission with mW powers and sub-nanometer linewidths.

Preparation of bioactive titania films on titanium metal via anodic oxidation.

PubMed

Cui, X; Kim, H-M; Kawashita, M; Wang, L; Xiong, T; Kokubo, T; Nakamura, T

2009-01-01

To research the crystal structure and surface morphology of anodic films on titanium metal in different electrolytes under various electrochemical conditions and investigate the effect of the crystal structure of the oxide films on apatite-forming ability in simulated body fluid (SBF). Titanium oxide films were prepared using an anodic oxidation method on the surface of titanium metal in four different electrolytes: sulfuric acid, acetic acid, phosphoric acid and sodium sulfate solutions with different voltages for 1 min at room temperature. Anodic films that consisted of rutile and/or anatase phases with porous structures were formed on titanium metal after anodizing in H(2)SO(4) and Na(2)SO(4) electrolytes, while amorphous titania films were produced after anodizing in CH(3)COOH and H(3)PO(4) electrolytes. Titanium metal with the anatase and/or rutile crystal structure films showed excellent apatite-forming ability and produced a compact apatite layer covering all the surface of titanium after soaking in SBF for 7d, but titanium metal with amorphous titania layers was not able to induce apatite formation. The resultant apatite layer formed on titanium metal in SBF could enhance the bonding strength between living tissue and the implant. Anodic oxidation is believed to be an effective method for preparing bioactive titanium metal as an artificial bone substitute even under load-bearing conditions.

Mitigation of substrate defects in reflective reticles using sequential coating and annealing

DOEpatents

Mirkanimi, Paul B.

2002-01-01

A buffer-layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The buffer-layer is formed by either a multilayer deposited on the substrate or by a plurality of sequentially deposited and annealed coatings deposited on the substrate. The plurality of sequentially deposited and annealed coating may comprise multilayer and single layer coatings. The multilayer deposited and annealed buffer layer coatings may be of the same or different material than the reflecting coating thereafter deposited on the buffer-layer.

Synthesis and characterization of ester and amide derivatives of titanium(IV) carboxymethylphosphonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melánová, Klára, E-mail: klara.melanova@upce.cz; Beneš, Ludvík; Trchová, Miroslava

2013-06-15

A set of layered ester and amide derivatives of titanium(IV) carboxymethylphosphonate was prepared by solvothermal treatment of amorphous titanium(IV) carboxymethylphosphonate with corresponding 1-alkanols, 1,ω-alkanediols, 1-aminoalkanes, 1,ω-diaminoalkanes and 1,ω-amino alcohols and characterized by powder X-ray diffraction, IR spectroscopy and thermogravimetric analysis. Whereas alkyl chains with one functional group form bilayers tilted to the layers, 1,ω-diaminoalkanes and most of 1,ω-alkanediols form bridges connecting the adjacent layers. In the case of amino alcohols, the alkyl chains form bilayer and either hydroxyl or amino group is used for bonding. This simple method for the synthesis of ester and amide derivatives does not require preparationmore » of acid chloride derivative as a precursor or pre-intercalation with alkylamines and can be used also for the preparation of ester and amide derivatives of titanium carboxyethylphosphonate and zirconium carboxymethylphosphonate. - Graphical abstract: Ester and amide derivatives of layered titanium carboxymethylphosphonate were prepared by solvothermal treatment of amorphous solid with alkanol or alkylamine. - Highlights: • Ester and amide derivatives of titanium carboxymethylphosphonate. • Solvothermal treatment of amorphous solid with alkanol or alkylamine. • Ester and amide formation confirmed by IR spectroscopy.« less

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

DOEpatents

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

Chemical solution deposition method of fabricating highly aligned MgO templates

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Sathyamurthy, Srivatsan [Knoxville, TN; Aytug, Tolga [Knoxville, TN; Arendt, Paul N [Los Alamos, NM; Stan, Liliana [Los Alamos, NM; Foltyn, Stephen R [Los Alamos, NM

2012-01-03

A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

NASA Astrophysics Data System (ADS)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

Threading Dislocations in InGaAs/GaAs (001) Buffer Layers for Metamorphic High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-07-01

In order to evaluate various buffer layers for metamorphic devices, threading dislocation densities have been calculated for uniform composition In x Ga1- x As device layers deposited on GaAs (001) substrates with an intermediate graded buffer layer using the L MD model, where L MD is the average length of misfit dislocations. On this basis, we compare the relative effectiveness of buffer layers with linear, exponential, and S-graded compositional profiles. In the case of a 2 μm thick buffer layer linear grading results in higher threading dislocation densities in the device layer compared to either exponential or S-grading. When exponential grading is used, lower threading dislocation densities are obtained with a smaller length constant. In the S-graded case, lower threading dislocation densities result when a smaller standard deviation parameter is used. As the buffer layer thickness is decreased from 2 μm to 0.1 μm all of the above effects are diminished, and the absolute threading dislocation densities increase.

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lordi, Vincenzo

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enablingmore » R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.« less

Fabrication, characterization, and biological assessment of multilayer laminin γ2 DNA coatings on titanium surfaces.

PubMed

Yang, Guoli; Zhang, Jing; Dong, Wenjing; Liu, Li; Shi, Jue; Wang, Huiming

2016-03-21

The purpose of this work was to fabricate a multilayer laminin γ2 DNA coating on a titanium surface and evaluate its biological properties. A multilayer laminin γ2 DNA coating was fabricated on titanium using a layer-by-layer assembly technique. The rate of coating degradation was evaluated by detecting the amount of cDNA remaining. Surface analysis using X-ray photoelectron spectroscopy, atomic force microscopy, and surface contact angle measurements revealed the multilayer structure to consist of cationic lipid and confirmed that a laminin γ2 DNA layer could be fabricated on titanium via the layer-by-layer assembly process. The transfection efficiency was highest for five layers in the multilayer structure. HEK293 cells cultured on the multilayer films displayed significantly higher adhesion activity than the control group. The expression of laminin γ2 and the co-localization of integrin β4 and plectin were more obvious in HN4 cells cultured on the multilayer laminin γ2 DNA coating, while weak immunoreactivities were observed in the control group. We concluded that the DNA-loaded multilayer provided a surface with good biocompatibility and that the multilayer laminin γ2 DNA coating might be effective in improving cell adhesion and the formation of hemidesmosomes on titanium surfaces.

Fabrication, characterization, and biological assessment of multilayer laminin γ2 DNA coatings on titanium surfaces

PubMed Central

Yang, Guoli; Zhang, Jing; Dong, Wenjing; Liu, Li; Shi, Jue; Wang, Huiming

2016-01-01

The purpose of this work was to fabricate a multilayer laminin γ2 DNA coating on a titanium surface and evaluate its biological properties. A multilayer laminin γ2 DNA coating was fabricated on titanium using a layer-by-layer assembly technique. The rate of coating degradation was evaluated by detecting the amount of cDNA remaining. Surface analysis using X-ray photoelectron spectroscopy, atomic force microscopy, and surface contact angle measurements revealed the multilayer structure to consist of cationic lipid and confirmed that a laminin γ2 DNA layer could be fabricated on titanium via the layer-by-layer assembly process. The transfection efficiency was highest for five layers in the multilayer structure. HEK293 cells cultured on the multilayer films displayed significantly higher adhesion activity than the control group. The expression of laminin γ2 and the co-localization of integrin β4 and plectin were more obvious in HN4 cells cultured on the multilayer laminin γ2 DNA coating, while weak immunoreactivities were observed in the control group. We concluded that the DNA-loaded multilayer provided a surface with good biocompatibility and that the multilayer laminin γ2 DNA coating might be effective in improving cell adhesion and the formation of hemidesmosomes on titanium surfaces. PMID:26996815

Fabrication, characterization, and biological assessment of multilayer laminin γ2 DNA coatings on titanium surfaces

NASA Astrophysics Data System (ADS)

Yang, Guoli; Zhang, Jing; Dong, Wenjing; Liu, Li; Shi, Jue; Wang, Huiming

2016-03-01

The purpose of this work was to fabricate a multilayer laminin γ2 DNA coating on a titanium surface and evaluate its biological properties. A multilayer laminin γ2 DNA coating was fabricated on titanium using a layer-by-layer assembly technique. The rate of coating degradation was evaluated by detecting the amount of cDNA remaining. Surface analysis using X-ray photoelectron spectroscopy, atomic force microscopy, and surface contact angle measurements revealed the multilayer structure to consist of cationic lipid and confirmed that a laminin γ2 DNA layer could be fabricated on titanium via the layer-by-layer assembly process. The transfection efficiency was highest for five layers in the multilayer structure. HEK293 cells cultured on the multilayer films displayed significantly higher adhesion activity than the control group. The expression of laminin γ2 and the co-localization of integrin β4 and plectin were more obvious in HN4 cells cultured on the multilayer laminin γ2 DNA coating, while weak immunoreactivities were observed in the control group. We concluded that the DNA-loaded multilayer provided a surface with good biocompatibility and that the multilayer laminin γ2 DNA coating might be effective in improving cell adhesion and the formation of hemidesmosomes on titanium surfaces.

Porous titania surfaces on titanium with hierarchical macro- and mesoporosities for enhancing cell adhesion, proliferation and mineralization.

PubMed

Han, Guang; Müller, Werner E G; Wang, Xiaohong; Lilja, Louise; Shen, Zhijian

2015-02-01

Titanium received a macroporous titania surface layer by anodization, which contains open pores with average pore diameter around 5 μm. An additional mesoporous titania top layer following the contour of the macropores, of 100-200 nm thickness and with a pore diameter of 10nm, was formed by using the evaporation-induced self-assembly (EISA) method with titanium (IV) tetraethoxide as the precursor. A coherent laminar titania surface layer was thus obtained, creating a hierarchical macro- and mesoporous surface that was characterized by high-resolution electron microscopy. The interfacial bonding between the surface layers and the titanium matrix was characterized by the scratch test that confirmed a stable and strong bonding of titania surface layers on titanium. The wettability to water and the effects on the osteosarcoma cell line (SaOS-2) proliferation and mineralization of the formed titania surface layers were studied systematically by cell culture and scanning electron microscopy. The results proved that the porous titania surface with hierarchical macro- and mesoporosities was hydrophilic that significantly promoted cell attachment and spreading. A synergistic role of the hierarchical macro- and mesoporosities was revealed in terms of enhancing cell adhesion, proliferation and mineralization, compared with the titania surface with solo scale topography. Copyright © 2014 Elsevier B.V. All rights reserved.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

NASA Astrophysics Data System (ADS)

Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat

2006-05-01

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Rare earth zirconium oxide buffer layers on metal substrates

DOEpatents

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2001-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

Protein adsorption and biomimetic mineralization behaviors of PLL-DNA multilayered films assembled onto titanium

NASA Astrophysics Data System (ADS)

Gao, Wenli; Feng, Bo; Ni, Yuxiang; Yang, Yongli; Lu, Xiong; Weng, Jie

2010-11-01

Titanium and its alloys are frequently used as surgical implants in load bearing situations, such as hip prostheses and dental implants, owing to their biocompatibility, mechanical and physical properties. In this paper, a layer-by-layer (LBL) self-assembly technique, based on the polyelectrolyte-mediated electrostatic adsorption of poly-L-lysine (PLL) and DNA, was used to the formation of multilayer on titanium surfaces. Then bovine serum albumin (BSA) adsorption and biomimetic mineralization of modified surfaces were studied. The chemical composition and wettability of assembled substrates were investigated by X-ray photoelectron spectroscopy (XPS), fluorescence microscopy and water contact angle measurement, respectively. The XPS analysis indicated that the layers were assembled successfully through electrostatic attractions. The measurement with ultraviolet (UV) spectrophotometer revealed that the LBL films enhanced ability of BSA adsorption onto titanium. The adsorption quantity of BSA on the surface terminated with PLL was higher than that of the surface terminated with DNA, and the samples of TiOH/P/D/P absorbed BSA most. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) showed that samples of assembled PLL or/and DNA had better bioactivity in inducing HA formation. Thus the assembling of PLL and DNA onto the surface of titanium in turn via a layer-by-layer self-assembly technology can improve the bioactivity of titanium.

Ultrasound assisted deposition of silica coatings on titanium

NASA Astrophysics Data System (ADS)

Kaş, Recep; Ertaş, Fatma Sinem; Birer, Özgür

2012-10-01

We present a novel ultrasound assisted method for silica coating of titanium surfaces. The coatings are formed by “smashing” silica nanoparticles onto activated titanium surface in solution using intense ultrasonic field. Homogeneous silica coatings are formed by deposition of dense multiple layers of silica nanoparticles. Since the nanoparticles also grow during the reaction, the layers of the coatings have smaller particles on the substrate and larger particles towards the surface. The thickness of the coatings can be controlled with several experimental parameters. Silica layers with thickness over 200 nm are readily obtained.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-10-05

An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

Lightweight, durable lead-acid batteries

DOEpatents

Lara-Curzio, Edgar [Lenoir City, TN; An, Ke [Knoxville, TX; Kiggans, Jr., James O.; Dudney, Nancy J [Knoxville, TN; Contescu, Cristian I [Knoxville, TN; Baker, Frederick S [Oak Ridge, TN; Armstrong, Beth L [Clinton, TN

2011-09-13

A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

Lightweight, durable lead-acid batteries

DOEpatents

Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O; Dudney, Nancy J; Contescu, Cristian I; Baker, Frederick S; Armstrong, Beth L

2013-05-21

A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

Preparation of Copper and Chromium Alloyed Layers on Pure Titanium by Plasma Surface Alloying Technology

NASA Astrophysics Data System (ADS)

He, Xiaojing; Li, Meng; Wang, Huizhen; Zhang, Xiangyu; Tang, Bin

2015-05-01

Cu-Cr alloyed layers with different Cu and Cr contents on pure titanium were obtained by means of plasma surface alloying technology. The microstructure, chemical composition and phase composition of Cu-Cr alloyed layers were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD), respectively. The experimental results demonstrate that the alloyed layers are bonded strongly to pure titanium substrate and consist of unbound Ti, CuTi, Cu3Ti, CuTi3 and Cr2Ti. The thickness of Cu5Cr5 and Cu7Cr3 alloyed layer are about 18 μm and 28 μm, respectively. The antibacterial properties against gram-negative Escherichia coli (E.coli, ATCC10536) and gram-positive Staphylococcus aureus (S. aureus, ATCC6538) of untreated pure titanium and Cu-Cr alloyed specimen were investigated by live/dead fluorescence staining method. The study shows that Cu-Cr alloyed layers exhibit excellent antibacterial activities against both E.coli and S.aureus within 24 h, which may be attributed to the formation of Cu-containing phases.

Influence of silicon doping of titanium nickelide near-surface layers on alloy cytocompatibility

NASA Astrophysics Data System (ADS)

Lotkov, A. I.; Matveev, A. L.; Artemyeva, L. V.; Meysner, S. N.; Matveeva, V. A.; Kudryashov, A. N.

2017-12-01

The cytocompatibility of titanium nickelide (TiNi) with near-surface layers doped with silicon ions was studied on mesenchymal stem cells of rat bone marrow cultivated in vitro. The cytotoxic effect of eluted components of material on the mesenchymal stem cells was determined using a RTCA iCELLigence cellular analyzer. The proliferative activity of mesenchymal stem cells cultivated in the presence or on the surfaces of titanium nickelide samples was estimated from the cell mitochondrial respiration rate in MTT tests using [2-(4-Iodophenyl)-3-(4-nitrophenyl)-5-(2, 4-disulfophenyl)-2H-tetrazolium] tetrazolium salt. It is shown that ion plasma modification of near-surface layers of titanium nickelide with silicon improves the cytocompatibility of the alloy.

Influence of laser cladding regimes on structural features and mechanical properties of coatings on titanium substrates

NASA Astrophysics Data System (ADS)

Malyutina, Yulia N.; Lazurenko, Daria V.; Bataev, Ivan A.; Movtchan, Igor A.

2015-10-01

In this paper an influence of the tantalum content on the structure and properties of surface layers of the titanium alloy doped using a laser treatment technology was investigated. It was found that an increase of a quantity of filler powder per one millimeter of a track length contributed to a rise of the content of undissolved particles in coatings. The maximum thickness of a cladded layer was reached at the mass of powder per the length unit equaled to 5.5 g/cm. Coatings were characterized by the formation of a dendrite structure with attributes of segregation. The width of a quenched fusion zone grew with an increase in the rate of powder feed to the treated area. Significant strengthening of the titanium surface layer alloyed with tantalum was not observed; however, the presence of undissolved tantalum particles can decrease the hardness of titanium surface layers.

Method of depositing buffer layers on biaxially textured metal substrates

DOEpatents

Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

2002-08-27

A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0

Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

2018-02-01

Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x < 0.023 and Δ y < 0.023. A device with a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) buffer layer was beneficial for hole tunneling to the emission layer, resulting in a 1.45-fold increase in current density. The tunneling of holes and the diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

Light and transmission electron microscopy of the intact interfaces between non-submerged titanium-coated epoxy resin implants and bone or gingiva.

PubMed

Listgarten, M A; Buser, D; Steinemann, S G; Donath, K; Lang, N P; Weber, H P

1992-02-01

This experiment was aimed at studying the intact tissue/implant interface of non-submerged dental implants with a titanium surface. Epoxy-resin replicas were fabricated from 3.05 x 8 mm cylindrical titanium implants with a plasma-sprayed apical portion and a smooth coronal collar. The replicas were coated with a 90-120-nm-thick layer of pure titanium and autoclaved. The coated replicas were inserted as non-submerged endosseous implants in the edentulous premolar region of dog mandibles and allowed to heal for three months. Jaw sections containing the implants were processed for light and electron microscopic study of the intact tissue/implant interface with and without prior demineralization. Gingival connective tissue fibers were closely adapted to the titanium layer, in an orientation more or less parallel to the implant surface. There was no evidence of any fiber insertions into the surface irregularities of the smooth or rough titanium surface. Undemineralized bone was intimately adapted to the titanium surface without any intervening space. In demineralized sections, the collagen fibers of the bone matrix tended to be somewhat thinner and occasionally less densely packed in the vicinity of the implant surface. However, they extended all the way to the titanium surface, without any intervening fibril-free layer.

Microstructure analysis and wear behavior of titanium cermet femoral head with hard TiC layer.

PubMed

Luo, Yong; Ge, Shirong; Liu, Hongtao; Jin, Zhongmin

2009-12-11

Titanium cermet was successfully synthesized and formed a thin gradient titanium carbide coating on the surface of Ti6Al4V alloy by using a novel sequential carburization under high temperature, while the titanium cermet femoral head was produced. The titanium cermet phase and surface topography were characterized with X-ray diffraction (XRD) and backscattered electron imaging (BSE). And then the wear behavior of titanium cermet femoral head was investigated by using CUMT II artificial joint hip simulator. The surface characterization indicates that carbon effectively diffused into the titanium alloys and formed a hard TiC layer on the Ti6Al4V alloys surface with a micro-porous structure. The artificial hip joint experimental results show that titanium cermet femoral head could not only improve the wear resistance of artificial femoral head, but also decrease the wear of UHMWPE joint cup. In addition, the carburized titanium alloy femoral head could effectively control the UHMWPE debris distribution, and increase the size of UHMWPE debris. All of the results suggest that titanium cermet is a prospective femoral head material in artificial joint.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paranthaman, Mariappan Parans

We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCOmore » wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.« less

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

Tensile properties of titanium electrolytically charged with hydrogen

NASA Technical Reports Server (NTRS)

Smith, R. J.; Otterson, D. A.

1971-01-01

Yield strength, ultimate tensile strength, and elongation were studied for annealed titanium electrolytically charged with hydrogen. The hydrogen was present as a surface hydride layer. These tensile properties were generally lower for uncharged titanium than for titanium with a continuous surface hydride; they were greater for uncharged titanium than for titanium with an assumed discontinuous surface hydride. We suggest that the interface between titanium and titanium hydride is weak. And the hydride does not necessarily impair strength and ductility of annealed titanium. The possibility that oxygen and/or nitrogen can embrittle titanium hydride is discussed.

Special Features of the Structure of Laser-Welded Joints of Dissimilar Alloys Based on Titanium and Aluminum

NASA Astrophysics Data System (ADS)

Nikulina, A. A.; Smirnov, A. I.; Turichin, G. A.; Klimova-Korsmik, O. G.; Babkin, K. D.

2017-11-01

The structure of laser-welded joints of parts having different thicknesses fabricated from alloys based on aluminum and titanium has been studied. Results of transmission and scanning electron microscopy measurements and x-ray diffraction analysis show that the diffusion interaction of microvolumes of two alloys in the weld leads to the formation of two interlayers: (i) a continuous intermetallic TiAl layer with thickness below 1 μm adjacent to the titanium alloy and (ii) a layer consisting of TiAl3 intermetallic dendrites with thickness of 2 - 6 μm adjacent to the TiAl layer. The average microhardness of the intermetallic layer is about 490 HV.

The study of the modes of Ta-Zr powder mixture non-vacuum electron-beam cladding on the surface of the cp-titanium plates

NASA Astrophysics Data System (ADS)

Samoylenko, V. V.; Lozhkina, E. A.; Polyakov, I. A.; Lenivtseva, O. G.; Ivanchik, I. S.; Matts, O. E.

2016-11-01

The effect of the modes of non-vacuum electron-beam cladding of Ta-Zr powder mixtures on the structure and properties of the layers formed on the surface of cp-titanium were studied. The mode of the electron-beam alloying of titanium with zirconium and tantalum, which ensured the formation of a defect-free layer with a high content of alloying elements was selected. Metallographic examination indicated the presence of a dendritic- and plate-type structure of cladded layers. The microhardness of the layers, formed at the optimum mode, was not changed in the cross section and was equal to 450 HV.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Critical CuI buffer layer surface density for organic molecular crystal orientation change

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol, E-mail: drlee@ssu.ac.kr

We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low thatmore » a large proportion of the substrate surface is bare.« less

Effects of anodic oxidation parameters on a modified titanium surface.

PubMed

Park, Il Song; Lee, Min Ho; Bae, Tae Sung; Seol, Kyeong Won

2008-02-01

Anodic oxidation is an electrochemical treatment that can be used to control the thickness of an oxide layer formed on a titanium surface. This procedure has the advantage of allowing the ions contained in an electrolyte to deposit onto the oxide layer. The characteristics of a layer treated with anodic oxidation can vary according to the type and concentration of the electrolytes as well as the processing variables used during anodic oxidation. In this study, the constant electrolyte for anodic oxidation was a mixed solution containing 0.02 M DL-alpha-glycerophosphate disodium salt and 0.2M calcium acetate. Anodic oxidation was carried out at different voltages, current densities, and duration of anodic oxidation. The results showed that the current density and variation in the duration of anodic oxidation did not have a large effect on the change in the characteristics of the layer. On the other hand, the size of the micropores was increased with increasing voltage of anodic oxidation, and anatase and rutile phases were found to co-exist in the porous titanium dioxide layer. In addition, the thickness of the oxide layer on titanium and the characteristic of corrosion resistance increased with increasing voltage. The MTT test showed that the cell viability was increased considerably as a result of anodic oxidation. The anodizing voltage is an important parameter that determines the characteristics of the anodic oxide layer of titanium. (c) 2007 Wiley Periodicals, Inc.

In situ fabrication of silver nanoparticle-filled hydrogen titanate nanotube layer on metallic titanium surface for bacteriostatic and biocompatible implantation

PubMed Central

Wang, Zheng; Sun, Yan; Wang, Dongzhou; Liu, Hong; Boughton, Robert I

2013-01-01

A silver nanoparticle (AgNP)-filled hydrogen titanate nanotube layer was synthesized in situ on a metallic titanium substrate. In the synthesis approach, a layer of sodium titanate nanotubes is first prepared on the titanium surface by using a hydrothermal method. Silver nitrate solution is absorbed into the nanotube channels by immersing a dried nanotube layer in silver nitrate solution. Finally, silver ions are reduced by glucose, leading to the in situ growth of AgNPs in the hydrogen titanate nanotube channels. Long-term silver release and bactericidal experiments demonstrated that the effective silver release and effective antibacterial period of the titanium foil with a AgNP-filled hydrogen titanate nanotube layer on the surface can extend to more than 15 days. This steady and prolonged release characteristic is helpful to promote a long-lasting antibacterial capability for the prevention of severe infection after surgery. A series of antimicrobial and biocompatible tests have shown that the sandwich nanostructure with a low level of silver loading exhibits a bacteriostatic rate as high as 99.99%, while retaining low toxicity for cells and possessing high osteogenic potential. Titanium foil with a AgNP-filled hydrogen titanate nanotube layer on the surface that is fabricated with low-cost surface modification methods is a promising implantable material that will find applications in artificial bones, joints, and dental implants. PMID:23966780

Structure and mechanical properties of a two-layered material produced by the E-beam surfacing of Ta and Nb on the titanium base after multiple rolling

NASA Astrophysics Data System (ADS)

Bataev, V. A.; Golkovski, M. G.; Samoylenko, V. V.; Ruktuev, A. A.; Polyakov, I. A.; Kuksanov, N. K.

2018-04-01

The study has been conducted in line with the current approach to investigation of materials obtained by considerably deep surface alloying of the titanium substrate with Ta, Nb, and Zr. The thickness of the resulting alloyed layer was equal to 2 mm. The coating was formed through weld deposition of a powder with the use of a high-voltage electron beam in the air. It has been lately demonstrated that manufactured such a way alloyed layers possess corrosion resistance which is significantly higher than the resistance of titanium substrates. It has already been shown that such two-layered materials are weldable. The study objective is to investigate the feasibility of rolling for necking the sheets with the Ti-Ta-Nb anticorrosion coating with further fourfold decrease in their thickness. The research is also aimed at investigation of the material properties after rolling. Anticorrosion layers were formed both on CP-titanium and on VT14 (Ti-4Al-3Mo-1 V) durable titanium alloy. The results of chemical composition determination, structure examination, X-ray phase analysis and mechanical properties observations (including bending properties of the alloyed layers) are presented in the paper. The combination of welding, rolling, and bending enables the manufacture of corrosion-resistant vessels and process pipes which are made from the developed material and find technological application.

Electrochemical anodizing treatment to enhance localized corrosion resistance of pure titanium.

PubMed

Prando, Davide; Brenna, Andrea; Bolzoni, Fabio M; Diamanti, Maria V; Pedeferri, Mariapia; Ormellese, Marco

2017-01-26

Titanium has outstanding corrosion resistance due to the thin protective oxide layer that is formed on its surface. Nevertheless, in harsh and severe environments, pure titanium may suffer localized corrosion. In those conditions, costly titanium alloys containing palladium, nickel and molybdenum are used. This purpose investigated how it is possible to control corrosion, at lower cost, by electrochemical surface treatment on pure titanium, increasing the thickness of the natural oxide layer. Anodic oxidation was performed on titanium by immersion in H2SO4 solution and applying voltages ranging from 10 to 80 V. Different anodic current densities were considered. Potentiodynamic tests in chloride- and fluoride-containing solutions were carried out on anodized titanium to determine the pitting potential. All tested anodizing treatments increased corrosion resistance of pure titanium, but never reached the performance of titanium alloys. The best corrosion behavior was obtained on titanium anodized at voltages lower than 40 V at 20 mA/cm2. Titanium samples anodized at low cell voltage were seen to give high corrosion resistance in chloride- and fluoride-containing solutions. Electrolyte bath and anodic current density have little effect on the corrosion behavior.

Formation of an ascorbate-apatite composite layer on titanium.

PubMed

Ito, Atsuo; Sogo, Yu; Ebihara, Yuko; Onoguchi, Masahiro; Oyane, Ayako; Ichinose, Noboru

2007-09-01

An ascorbate-apatite composite layer was successfully formed on NaOH- and heat-treated titanium by coprecipitating L-ascorbic acid phosphate and low-crystalline apatite in a supersaturated calcium phosphate solution at 37 degrees C for 48 h. The supersaturated calcium phosphate solutions used have chemical compositions attainable by mixing infusion fluids officially approved for clinical use. The amount of immobilized L-ascorbic acid phosphate ranged from 1.0 to 2.3 microg mm(-2), which is most likely to be sufficient for the in vitro osteogenic differentiation of mesenchymal stem cells on titanium. Since ascorbate is important for the collagen synthesis and subsequent osteogenesis of mesenchymal stem cells, titanium coated with the ascorbate-apatite composite layer would be useful as a scaffold in bone tissue engineering and as a bone substitute.

Contribution of ion beam analysis methods to the development of second generation high temperature superconducting wires

NASA Astrophysics Data System (ADS)

Usov, I. O.; Arendt, P. N.; Foltyn, S. R.; Stan, L.; DePaula, R. F.; Holesinger, T. G.

2010-06-01

One of the crucial steps in the second generation high temperature superconducting wire program was development of the buffer-layer architecture. The architecture designed at the Superconductivity Technology Center at Los Alamos National Laboratory consists of several oxide layers wherein each layer plays a specific role, namely: nucleation layer, diffusion barrier, biaxially textured template, and intermediate layer providing a suitable lattice match to the superconducting Y 1Ba 2Cu 3O 7 (YBCO) compound. This report demonstrates how a wide range of ion beam analysis techniques (SIMS, RBS, channeling, PIXE, PIGE, NRA and ERD) was employed for analysis of each buffer layer and the YBCO film. These results assisted in understanding of a variety of physical processes occurring during the buffer layer fabrication and helped to optimize the buffer-layer architecture as a whole.

Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

NASA Astrophysics Data System (ADS)

Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

2018-02-01

The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

[Effect of sintering gold paste coating on the bonding strength of pure titanium and three low-fusing porcelains].

PubMed

Zhang, Ya-li; Luo, Xiao-ping; Zhou, Li

2012-05-01

To study the effect of sintering gold paste coating of pure titanium on the adhesion of three porcelains following the protocol ISO 9693, and to investigate the titanium-porcelains interfaces. Sixty machined pure titanium samples were prepared in a rectangular shape according to ISO 9693 and divided equally into six groups. Half of the strips were coated with gold paste (Deckgold) and sintered. Three ultra-low-fusing dental porcelains (I: Initial Ti, S: Super porcelain Ti-22, T: TitanKeramik) were fused onto the titanium surfaces. A thin layer of bonding agent was only applied on the surfaces of uncoated gold specimens. The interface of the porcelain and titanium was observed with a field emission scanning electron microscope (FE-SEM) after metallographic preparation and sputtered with a very thin carbon layer of the embedded titanium-porcelain interface. After three-point bending test was performed, optical stereomicroscope was used to characterize the titanium-porcelains adhesion and determine the mode of failure. FE-SEM illustrated intermetallic compounds of Au-Ti formed with some visible microcracks in the gold layer and the interface of gold layer and ceramic. All the uncoated gold titanium-porcelain system showed predominately adhesive fracture at the titanium oxidation, whereas the failure modes in all gold coated systems were cohesive and adhesive, mainly cohesive. The three-point-bending test showed that the bonding strength of GS and GI groups [(37.08 ± 4.32) and (36.20 ± 2.40) MPa] were higher than those in uncoated groups [(31.56 ± 3.74) and (30.88 ± 2.60) MPa, P < 0.05], while no significant difference was found between T group and GT group (P > 0.05). The gold paste intermediate coatings can improve bond strengths of Super porcelain Ti-22 system and Initial Ti system, which have potential applications in clinical fields.

Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

DTIC Science & Technology

2009-06-15

titanium isopropoxide (TTIP) as metal precursors. The deposition rate of titania films from TiCl4 was found to be stable in the 150-300 °C...tetrachloride (TiCl4) and titanium isopropoxide (TTIP) are widely used as metal precursors and water or hydrogen peroxide are used as oxygen precursors.29-36... titanium dioxide supported on high surface area silica gel have been synthesized by atomic layer deposition (ALD) using titanium tetrachloride (TiCl4) and

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2017-09-26

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer andmore » the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.« less

Long life hydrocarbon conversion catalyst and method of making

DOEpatents

Tonkovich, Anna Lee Y [Pasco, WA; Wang, Yong [Richland, WA; Gao, Yufei [Kennewick, WA

2002-11-12

The present invention includes a catalyst that has at least four layers, (1) porous support, (2) buffer layer, (3) interfacial layer, and optionally (4) catalyst layer. The buffer layer provides a transition of thermal expansion coefficient from the porous support to the interfacial layer thereby reducing thermal expansion stress as the catalyst is heated to high operating temperatures. The method of the present invention for making the at least three layer catalyst has the steps of (1) selecting a porous support, (2) solution depositing an interfacial layer thereon, and optionally (3) depositing a catalyst material onto the interfacial layer; wherein the improvement comprises (4) depositing a buffer layer between the porous support and the interfacial layer.

Effect of surface reaction layer on grindability of cast titanium alloys.

PubMed

Ohkubo, Chikahiro; Hosoi, Toshio; Ford, J Phillip; Watanabe, Ikuya

2006-03-01

The purpose of this study was to investigate the effect of the cast surface reaction layer on the grindability of titanium alloys, including free-machining titanium alloy (DT2F), and to compare the results with the grindability of two dental casting alloys (gold and Co-Cr). All titanium specimens (pure Ti, Ti-6Al-4V and DT2F) were cast using a centrifugal casting machine in magnesia-based investment molds. Two specimen sizes were used to cast the titanium metals so that the larger castings would be the same size as the smaller gold and Co-Cr alloy specimens after removal of the surface reaction layer (alpha-case). Grindability was measured as volume loss ground from a specimen for 1 min using a handpiece engine with a SiC abrasive wheel at 0.1 kgf and four circumferential wheel speeds. For the titanium and gold alloys, grindability increased as the rotational speed increased. There was no statistical difference (p>0.05) in grindability for all titanium specimens either with or without the alpha-case. Of the titanium metals tested, Ti-6 Al-4V had the greatest grindability at higher speeds, followed by DT2F and CP Ti. The grindability of the gold alloy was similar to that of Ti-6 Al-4V, whereas the Co-Cr alloy had the lowest grindability. The results of this study indicated that the alpha-case did not significantly affect the grindability of the titanium alloys. The free-machining titanium alloy had improved grindability compared to CP Ti.

Effect of pulsed laser parameters on in-situ TiC synthesis in laser surface treatment

NASA Astrophysics Data System (ADS)

Hamedi, M. J.; Torkamany, M. J.; Sabbaghzadeh, J.

2011-04-01

Commercial titanium sheets pre-coated with 300-μm thick graphite layer were treated by employing a pulsed Nd:YAG laser in order to enhance surface properties such as wear and erosion resistance. Laser in-situ alloying method produced a composite layer by melting the titanium substrate and dissolution of graphite in the melt pool. Correlations between pulsed laser parameters, microstructure and microhardness of the synthesized composite coatings were investigated. Effects of pulse duration and overlapping factor on the microstructure and hardness of the alloyed layer were deduced from Vickers micro-indentation tests, XRD, SEM and metallographic analyses of cross sections of the generated layer. Results show that the composite cladding layer was constituted with TiC intermetallic phase between the titanium matrix in particle and dendrite forms. The dendritic morphology of composite layer was changed to cellular grain structure by increasing laser pulse duration and irradiated energy. High values of the measured hardness indicate that deposited titanium carbide increases in the conditions with more pulse duration and low process speed. This occurs due to more dissolution of carbon into liquid Ti by heat input increasing and positive influence of the Marangoni flow in the melted zone.

Enhanced adhesion for LIGA microfabrication by using a buffer layer

DOEpatents

Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

2004-01-27

The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

Enhanced adhesion for LIGA microfabrication by using a buffer layer

DOEpatents

Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

2001-01-01

The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Barron, Carole C.; Fleming, James G.; Montague, Stephen

1999-01-01

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

NASA Astrophysics Data System (ADS)

Tu, Ru-Chin; Su, Yan-Kuin; Huang, Ying-Sheng; Chen, Giin-Sang; Chou, Shu-Tsun

1998-09-01

Detailed structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures (SCH) grown on ZnSe, ZnSe/ZnSSe strained-layer superlattices (SLS),and GaAs buffer layers at the II VI/GaAs interface have been carried out by employingtransmission electron microscopy, variable temperature photoluminescence (PL), andcontactless electroreflectance (CER) measurements. A significant improvement onthe defect reduction and the optical quality has been observed by using either theZnSe/ZnSSe SLS or GaAs as the buffer layers when compared to that of the sample usingonly ZnSe as the buffer layer. However, the sample grown with the SLS buffer layersreveals a room temperature PL intensity higher than that of the sample grown witha GaAs buffer layer, which may still suffer from the great ionic differences betweenthe II V and III V atoms. Using 15 K CER spectra, we have also studied variousexcitonic transitions originating from strained Zn0.80Cd0.20Se/ZnSe single quantumwell in SCH with different buffer layers. An analysis of the CER spectra has ledto the identification of various excitonic transitions, mnH (L), between the mthconduction band state and the nth heavy (light)-hole band state. An excellentagreement between experiments and theoretical calculations based on the envelopefunction approximation model has been achieved.

Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, S.; Ma, B.; Narayanan, M.

2012-01-01

Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 xmore » 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.« less

Titanium hermetic seals

DOEpatents

Brow, Richard K.; Watkins, Randall D.

1995-07-04

Titanium is prenitrided by being heated in a nitrogen environment under conditions which give rise to the formation of a titanium-nitride surface layer on the titanium. Titanium thus prenitrided may be used in electrical components which are hermetically sealed using silicate glasses and standard glass sealing techniques. According to the method of the invention, alkali volatilization and formation of deleterious interfacial silicide are inhibited.

Titanium hermetic seals

DOEpatents

Brow, Richard K.; Watkins, Randall D.

1995-01-01

Titanium is prenitrided by being heated in a nitrogen environment under conditions which give rise to the formation of a titanium-nitride surface layer on the titanium. Titanium thus prenitrided may be used in electrical components which are hermetically sealed using silicate glasses and standard glass sealing techniques. According to the method of the invention, alkali volatilization and formation of deleterious interfacial silicide are inhibited.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Influence of laser cladding regimes on structural features and mechanical properties of coatings on titanium substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malyutina, Yulia N., E-mail: iuliiamaliutina@gmail.ru; Lazurenko, Daria V., E-mail: pavlyukova-87@mail.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru

2015-10-27

In this paper an influence of the tantalum content on the structure and properties of surface layers of the titanium alloy doped using a laser treatment technology was investigated. It was found that an increase of a quantity of filler powder per one millimeter of a track length contributed to a rise of the content of undissolved particles in coatings. The maximum thickness of a cladded layer was reached at the mass of powder per the length unit equaled to 5.5 g/cm. Coatings were characterized by the formation of a dendrite structure with attributes of segregation. The width of a quenchedmore » fusion zone grew with an increase in the rate of powder feed to the treated area. Significant strengthening of the titanium surface layer alloyed with tantalum was not observed; however, the presence of undissolved tantalum particles can decrease the hardness of titanium surface layers.« less

The optimum titanium precursor of fabricating TiO2 compact layer for perovskite solar cells.

PubMed

Qin, Jianqiang; Zhang, Zhenlong; Shi, Wenjia; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

2017-12-29

Perovskite solar cells (PSCs) have attracted tremendous attentions due to its high performance and rapid efficiency promotion. Compact layer plays a crucial role in transferring electrons and blocking charge recombination between the perovskite layer and fluorine-doped tin oxide (FTO) in PSCs. In this study, compact TiO 2 layers were synthesized by spin-coating method with three different titanium precursors, titanium diisopropoxide bis (acetylacetonate) (c-TTDB), titanium isopropoxide (c-TTIP), and tetrabutyl titanate (c-TBOT), respectively. Compared with the PSCs based on the widely used c-TTDB and c-TTIP, the device based on c-TBOT has significantly enhanced performance, including open-circuit voltage, short-circuit current density, fill factor, and hysteresis. The significant enhancement is ascribed to its excellent morphology, high conductivity and optical properties, fast charge transfer, and large recombination resistance. Thus, a power conversion efficiency (PCE) of 17.03% has been achieved for the solar cells based on c-TBOT.

The optimum titanium precursor of fabricating TiO2 compact layer for perovskite solar cells

NASA Astrophysics Data System (ADS)

Qin, Jianqiang; Zhang, Zhenlong; Shi, Wenjia; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

2017-12-01

Perovskite solar cells (PSCs) have attracted tremendous attentions due to its high performance and rapid efficiency promotion. Compact layer plays a crucial role in transferring electrons and blocking charge recombination between the perovskite layer and fluorine-doped tin oxide (FTO) in PSCs. In this study, compact TiO2 layers were synthesized by spin-coating method with three different titanium precursors, titanium diisopropoxide bis (acetylacetonate) (c-TTDB), titanium isopropoxide (c-TTIP), and tetrabutyl titanate (c-TBOT), respectively. Compared with the PSCs based on the widely used c-TTDB and c-TTIP, the device based on c-TBOT has significantly enhanced performance, including open-circuit voltage, short-circuit current density, fill factor, and hysteresis. The significant enhancement is ascribed to its excellent morphology, high conductivity and optical properties, fast charge transfer, and large recombination resistance. Thus, a power conversion efficiency (PCE) of 17.03% has been achieved for the solar cells based on c-TBOT.

Anticorrosion efficiency of ultrasonically deposited silica coatings on titanium

NASA Astrophysics Data System (ADS)

Ertaş, Fatma Sinem; Kaş, Recep; Mikó, Annamária; Birer, Özgür

2013-07-01

We utilized high intensity ultrasound to prepare coatings of silica and organically modified silica composed of multiple layers of densely packed nanoparticles. Ultrasound was used to collide nanoparticles onto an activated titanium surface with high speed. Large areas could be homogeneously coated by this method. These coatings were characterized by spectroscopy and microscopy methods and the anticorrosion efficiency in NaCl solution was evaluated by electrochemical measurements. The results indicated that the composite coatings provided good quality barrier layer on bare titanium and decreased the anodic corrosion rate. It was found that increase in the organic content of the coating shifted the passivation potential towards more positive direction. The comparison of the impedance results recorded at the corrosion potential pointed out that in each case a good quality barrier layer was formed on the titanium surface. The outstanding corrosion resistance of the composite coatings with only ~200 nm thickness shows that ultrasound assisted deposition can be a competitive method to obtain corrosion protective layers.

Self-assembled anchor layers/polysaccharide coatings on titanium surfaces: a study of functionalization and stability

PubMed Central

Zemek, Josef; Neykova, Neda; Demianchuk, Roman; Chánová, Eliška Mázl; Šlouf, Miroslav; Houska, Milan; Rypáček, František

2015-01-01

Summary Composite materials based on a titanium support and a thin, alginate hydrogel could be used in bone tissue engineering as a scaffold material that provides biologically active molecules. The main objective of this contribution is to characterize the activation and the functionalization of titanium surfaces by the covalent immobilization of anchoring layers of self-assembled bisphosphonate neridronate monolayers and polymer films of 3-aminopropyltriethoxysilane and biomimetic poly(dopamine). These were further used to bind a bio-functional alginate coating. The success of the titanium surface activation, anchoring layer formation and alginate immobilization, as well as the stability upon immersion under physiological-like conditions, are demonstrated by different surface sensitive techniques such as spectroscopic ellipsometry, infrared reflection–absorption spectroscopy and X-ray photoelectron spectroscopy. The changes in morphology and the established continuity of the layers are examined by scanning electron microscopy, surface profilometry and atomic force microscopy. The changes in hydrophilicity after each modification step are further examined by contact angle goniometry. PMID:25821702

Low-Cd CIGS solar cells made with a hybrid CdS/Zn(O,S) buffer layer

DOE PAGES

Garris, Rebekah L.; Mansfield, Lorelle M.; Egaas, Brian; ...

2016-10-27

In Cu(In,Ga)Se2 (CIGS) solar cells, CdS and Zn(O,S) buffer layers were compared with a hybrid buffer layer consisting of thin CdS followed Zn(O,S). We explore the physics of this hybrid layer that combines the standard (Cd) approach with the alternative (Zn) approach in the pursuit to unlock further potential for CIGS technology. CdS buffer development has shown optimal interface properties, whereas Zn(O,S) buffer development has shown increased photocurrent. Although a totally Cd-free solar module is more marketable, the retention of a small amount of Cd can be beneficial to achieve optimum junction properties. As long as the amount of Cdmore » is reduced to less than 0.01% by weight, the presence of Cd does not violate the hazardous substance restrictions of the European Union (EU). We estimate the amount of Cd allowed in the EU for CIGS on both glass and stainless steel substrates, and we show that reducing Cd becomes increasingly important as substrate weights decrease. As a result, this hybrid buffer layer had reduced Cd content and a wider space charge region, while achieving equal or better solar cell performance than buffer layers of either CdS or Zn(O,S) alone.« less

The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

NASA Astrophysics Data System (ADS)

Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

2016-05-01

Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00465b

Thin Thermal-Insulation Blankets for Very High Temperatures

NASA Technical Reports Server (NTRS)

Choi, Michael K.

2003-01-01

Thermal-insulation blankets of a proposed type would be exceptionally thin and would endure temperatures up to 2,100 C. These blankets were originally intended to protect components of the NASA Solar Probe spacecraft against radiant heating at its planned closest approach to the Sun (a distance of 4 solar radii). These blankets could also be used on Earth to provide thermal protection in special applications (especially in vacuum chambers) for which conventional thermal-insulation blankets would be too thick or would not perform adequately. A blanket according to the proposal (see figure) would be made of molybdenum, titanium nitride, and carbon- carbon composite mesh, which melt at temperatures of 2,610, 2,930, and 2,130 C, respectively. The emittance of molybdenum is 0.24, while that of titanium nitride is 0.03. Carbon-carbon composite mesh is a thermal insulator. Typically, the blanket would include 0.25-mil (.0.00635-mm)-thick hot-side and cold-side cover layers of molybdenum. Titanium nitride would be vapor-deposited on both surfaces of each cover layer. Between the cover layers there would be 10 inner layers of 0.15-mil (.0.0038-mm)-thick molybdenum with vapor-deposited titanium nitride on both sides of each layer. The thickness of each titanium nitride coat would be about 1,000 A. The cover and inner layers would be interspersed with 0.25-mil (0.00635-mm)-thick layers of carbon-carbon composite mesh. The blanket would have total thickness of 4.75 mils (approximately equal to 0.121 mm) and an areal mass density of 0.7 kilograms per square meter. One could, of course, increase the thermal- insulation capability of the blanket by increasing number of inner layers (thereby unavoidably increasing the total thickness and mass density).

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

NASA Astrophysics Data System (ADS)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Cooptimization of Adhesion and Power Conversion Efficiency of Organic Solar Cells by Controlling Surface Energy of Buffer Layers.

PubMed

Lee, Inhwa; Noh, Jonghyeon; Lee, Jung-Yong; Kim, Taek-Soo

2017-10-25

Here, we demonstrate the cooptimization of the interfacial fracture energy and power conversion efficiency (PCE) of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT)-based organic solar cells (OSCs) by surface treatments of the buffer layer. The investigated surface treatments of the buffer layer simultaneously changed the crack path and interfacial fracture energy of OSCs under mechanical stress and the work function of the buffer layer. To investigate the effects of surface treatments, the work of adhesion values were calculated and matched with the experimental results based on the Owens-Wendt model. Subsequently, we fabricated OSCs on surface-treated buffer layers. In particular, ZnO layers treated with poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) simultaneously satisfied the high mechanical reliability and PCE of OSCs by achieving high work of adhesion and optimized work function.

Room temperature synthesis of protonated layered titanate sheets using peroxo titanium carbonate complex solution.

PubMed

Sutradhar, Narottam; Sinhamahapatra, Apurba; Pahari, Sandip Kumar; Bajaj, Hari C; Panda, Asit Baran

2011-07-21

We report the synthesis of peroxo titanium carbonate complex solution as a novel water-soluble precursor for the direct synthesis of layered protonated titanate at room temperature. The synthesized titanates showed excellent removal capacity for Pb(2+) and methylene blue. Based on experimental observations, a probable mechanism for the formation of protonated layered dititanate sheets is also discussed.

The effect of heat treatment simulating porcelain firing processes on titanium corrosion resistance.

PubMed

Sokołowski, Grzegorz; Rylska, Dorota; Sokołowski, Jerzy

2016-01-01

Corrosion resistance of titanium used in metal-ceramic restorations in manufacturing is based on the presence of oxide layer on the metal surface. The procedures used during combining metallic material with porcelain may affect the changes in oxide layers structure, and thus anticorrosive properties of metallic material. The aim of the study was an evaluation of potential changes in the structure and selected corrosion properties of titanium after sandblasting and thermal treatment applicable to the processes of ceramics fusion. Milled titanium elements were subjected to a few variants of the processes typical of ceramics fusion and studied in terms of resistance to electrochemical corrosion. The study included the OCP changes over time, measurements of Icorr, Ecorr and Rp as well as potentiodynamic examinations. Surface microstructure and chemical composition were analyzed using SEM and EDS methods. The results obtained allow us to conclude that the processes corresponding to ceramic oxidation and fusion on titanium in the variants used in the study do not cause deterioration of its anticorrosive properties, and partially enhance the resistance. This depends on the quality of oxide layers structure. Titanium elements treated by porcelain firing processes do not lose their corrosion resistance.

Laminate article

DOEpatents

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2002-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

DOEpatents

Hankins, Matthew G [Albuquerque, NM

2009-10-06

Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

Method for producing chemical energy

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2004-09-21

Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Energetic powder

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2003-12-23

Fluoroalkylsilane-coated metal particles. The particles have a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer. The particles may be prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Solid Lubricant For Alumina

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

1993-01-01

Outer layer of silver lubricates, while intermediate layer of titanium ensures adhesion. Lubricating outer films of silver deposited on thin intermediate films of titanium on alumina substrates found to reduce sliding friction and wear. Films provide effective lubrication for ceramic seals, bearings, and other hot sliding components in advanced high-temperature engines.

Synergistic responses of superficial chemistry and micro topography of titanium created by wire-type electric discharge machining.

PubMed

Kataoka, Yu; Tamaki, Yukimichi; Miyazaki, Takashi

2011-01-01

Wire-type electric discharge machining has been applied to the manufacture of endosseous titanium implants as this computer associated technique allows extremely accurate complex sample shaping with an optimal micro textured surface during the processing. Since the titanium oxide layer is sensitively altered by each processing, the authors hypothesized that this technique also up-regulates biological responses through the synergistic effects of the superficial chemistry and micro topography. To evaluate the respective in vitro cellular responses on the superficial chemistry and micro topography of titanium surface processed by wire-type electric discharge, we used titanium-coated epoxy resin replica of the surface. An oxide layer on the titanium surface processed by wire-type electric discharge activated the initial responses of osteoblastic cells through an integrin-mediated mechanism. Since the mRNA expression of ALP on those replicas was up-regulated compared to smooth titanium samples, the micro topography of a titanium surface processed by wire-type electric discharge promotes the osteogenic potential of cells. The synergistic response of the superficial chemistry and micro topography of titanium processed by wire-type electric discharge was demonstrated in this study.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków; Nozaki, Takayuki

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes inmore » the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.« less

Titanium modified with layer-by-layer sol-gel tantalum oxide and an organodiphosphonic acid: a coating for hydroxyapatite growth.

PubMed

Arnould, C; Volcke, C; Lamarque, C; Thiry, P A; Delhalle, J; Mekhalif, Z

2009-08-15

Titanium and its alloys are widely used in surgical implants due to their appropriate properties like corrosion resistance, biocompatibility, and load bearing. Unfortunately when metals are used for orthopedic and dental implants there is the possibility of loosening over a long period of time. Surface modification is a good way to counter this problem. A thin tantalum oxide layer obtained by layer-by-layer (LBL) sol-gel deposition on top of a titanium surface is expected to improve biocorrosion resistance in the body fluid, biocompatibility, and radio-opacity. This elaboration step is followed by a modification of the tantalum oxide surface with an organodiphosphonic acid self-assembled monolayer, capable of chemically binding to the oxide surface, and also improving hydroxyapatite growth. The different steps of this proposed process are characterized by surfaces techniques like contact angle, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).

Laminate articles on biaxially textured metal substrates

DOEpatents

Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

2003-12-16

A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0

Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Seokki; Choi, Moonseok; Kim, Dohyung

2015-01-12

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

Method of depositing epitaxial layers on a substrate

DOEpatents

Goyal, Amit

2003-12-30

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

NASA Astrophysics Data System (ADS)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

PubMed

Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

2016-06-07

Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.

Molybdeno-Aluminizing of Powder Metallurgy and Wrought Ti and Ti-6Al-4V alloys by Pack Cementation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsipas, Sophia A., E-mail: stsipas@ing.uc3m.es; Go

Wear and high temperature oxidation resistance of some titanium-based alloys needs to be enhanced, and this can be effectively accomplished by surface treatment. Molybdenizing is a surface treatment where molybdenum is introduced into the surface of titanium alloys causing the formation of wear-resistant surface layers containing molybdenum, while aluminizing of titanium-based alloys has been reported to improve their high temperature oxidation properties. Whereas pack cementation and other surface modification methods have been used for molybdenizing or aluminizing of wrought and/or cast pure titanium and titanium alloys, such surface treatments have not been reported on titanium alloys produced by powder metallurgymore » (PM). Also a critical understanding of the process parameters for simultaneous one step molybdeno-aluminizing of titanium alloys by pack cementation and the predominant mechanism for this process have not been reported. The current research work describes the surface modification of titanium and Ti-6Al-4V prepared by PM by molybdeno-aluminizing and analyzes thermodynamic aspects of the deposition process. Similar coatings are also deposited to wrought Ti-6Al-4V and compared. Characterization of the coatings was carried out using scanning electron microscopy and x-ray diffraction. For both titanium and Ti-6Al-4V, the use of a powder pack containing ammonium chloride as activator leads to the deposition of molybdenum and aluminium into the surface but also introduces nitrogen causing the formation of a thin titanium nitride layer. In addition, various titanium aluminides and mixed titanium aluminium nitrides are formed. The appropriate conditions for molybdeno-aluminizing as well as the phases expected to be formed were successfully determined by thermodynamic equilibrium calculations. - Highlights: •Simultaneous co-deposition of Mo-Al onto powder metallurgy and wrought Ti alloy •Thermodynamic calculations were used to optimize deposition conditions •External TiN and internal a Mo-rich layer on all alloy substrates •Titanium aluminides and Ti-Al mixed nitrides are formed on Ti-6Al-4V •The presence of Al and V alloying elements modifies the diffusion of Mo.« less

Electrical characteristic of the titanium mesh electrode for transcutaneous intrabody communication to monitor implantable artificial organs.

PubMed

Okamoto, Eiji; Kikuchi, Sakiko; Mitamura, Yoshinori

2016-09-01

We have developed a tissue-inducing electrode using titanium mesh to obtain mechanically and electrically stable contact with the tissue for a new transcutaneous communication system using the human body as a conductive medium. In this study, we investigated the electrical properties of the titanium mesh electrode by measuring electrode-tissue interface resistance in vivo. The titanium mesh electrode (Hi-Lex Co., Zellez, Hyogo, Japan) consisted of titanium fibers (diameter of 50 μm), and it has an average pore size of 200 μm and 87 % porosity. The titanium mesh electrode has a diameter of 5 mm and thickness of 1.5 mm. Three titanium mesh electrodes were implanted separately into the dorsal region of the rat. We measured the electrode-electrode impedance using an LCR meter for 12 weeks, and we calculated the tissue resistivity and electrode-tissue interface resistance. The electrode-tissue interface resistance of the titanium mesh electrode decreased slightly until the third POD and then continuously increased to 75 Ω. The electrode-tissue interface resistance of the titanium mesh electrode is stable and it has lower electrode-tissue interface resistance than that of a titanium disk electrode. The extracted titanium mesh electrode after 12 weeks implantation was fixed in 10 % buffered formalin solution and stained with hematoxylin-eosin. Light microscopic observation showed that the titanium mesh electrode was filled with connective tissue, inflammatory cells and fibroblasts with some capillaries in the pores of the titanium mesh. The results indicate that the titanium mesh electrode is a promising electrode for the new transcutaneous communication system.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Corrosion behavior of Ti-39Nb alloy for dentistry.

PubMed

Fojt, Jaroslav; Joska, Ludek; Malek, Jaroslav; Sefl, Vaclav

2015-11-01

To increase an orthopedic implant's lifetime, researchers are now concerned on the development of new titanium alloys with suitable mechanical properties (low elastic modulus-high fatigue strength), corrosion resistance and good workability. Corrosion resistance of the newly developed titanium alloys should be comparable with that of pure titanium. The effect of medical preparations containing fluoride ions represents a specific problem related to the use of titanium based materials in dentistry. The aim of this study was to determine the corrosion behavior of β titanium alloy Ti-39Nb in physiological saline solution and in physiological solution containing fluoride ions. Corrosion behavior was studied using standard electrochemical techniques and X-ray photoelectron spectroscopy. It was found that corrosion properties of the studied alloy were comparable with the properties of titanium grade 2. The passive layer was based on the oxides of titanium and niobium in several oxidation states. Alloying with niobium, which was the important part of the alloy passive layer, resulted in no significant changes of corrosion behavior. In the presence of fluoride ions, the corrosion resistance was higher than the resistance of titanium. Copyright © 2015 Elsevier B.V. All rights reserved.

Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ruban, O. A.; Tabachkova, N. Yu.; Shchetinin, I. V.

2017-10-01

Spatial distribution of residual elastic strain in the layers of two step-graded metamophic buffers of various designs, grown by molecular beam epitaxy from ternary InxAl1-xAs solutions on GaAs(001) substrates, is obtained using reciprocal space mapping by three-axis X-ray diffractometry and the linear theory of elasticity. The difference in the design of the buffers enabled the formation of a dislocation-free layer with different thickness in each of the heterostructures, which was the main basis of this study. It is shown that, in spite of the different design of graded metamorphic buffers, the nature of strain fields in them is the same, and the residual elastic strains in the final elements of both buffers adjusted for the effect of work hardening subject to the same phenomenological law, which describes the strain relief process in single-layer heterostructures.

In situ formation of titanium carbide using titanium and carbon-nanotube powders by laser cladding

NASA Astrophysics Data System (ADS)

Savalani, M. M.; Ng, C. C.; Li, Q. H.; Man, H. C.

2012-01-01

Titanium metal matrix composite coatings are considered to be important candidates for high wear resistance applications. In this study, TiC reinforced Ti matrix composite layers were fabricated by laser cladding with 5, 10, 15 and 20 wt% carbon-nanotube. The effects of the carbon-nanotube content on phase composition, microstructure, micro-hardness and dry sliding wear resistance of the coating were studied. Microstructural observation using scanning electron microscopy showed that the coatings consisted of a matrix of alpha-titanium phases and the reinforcement phase of titanium carbide in the form of fine dendrites, indicating that titanium carbide was synthesized by the in situ reaction during laser irradiation. Additionally, measurements on the micro-hardness and dry sliding wear resistance of the coatings indicated that the mechanical properties were affected by the amount of carbon-nanotube in the starting precursor materials and were enhanced by increasing the carbon-nanotube content. Results indicated that the composite layers exhibit high hardness and excellent wear resistance.

Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

PubMed

Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

2012-07-01

In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

SURFACE HARDENING OF TITANIUM BY TREATMENT IN MOLTEN BORAX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minkevich, A.N.; Shul'ga, Yu.N.

1957-01-01

The surface hardening of titanium and titanium alloys by treatment in molten borax was investigated. Commercial titanium, a titanium-tungsten alloy, and an aluminum-chromium-titanium alloy were used for the experiments. To prevent oxidation of the titanium and to protect the surface, electro-chemical protection was applied, the current density being 0.1 amp/cm/sup 2/ and the the specimens were coated with a thin layer of borax. The results showed that treatment in molten borax is an effective method of increasing surface hardness. However, the strength, mmalleabiltiy, and toughness of the hardness increase is discussed. (J.S.R.)

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.

2009-08-15

In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

Tetradymite layer assisted heteroepitaxial growth and applications

DOEpatents

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

2017-08-01

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

The comparison of phosphate-titanate-silicate layers on the titanium and Ti6Al4V alloy base.

PubMed

Rokita, M

2011-08-15

The studied layers were composed of two parts: titanate-silicate underlayer for better adhesion and titanate-phosphate-silicate layers for potential bioparameters. The layers with different amounts of hydroxyapatite were deposited on titanium and Ti6Al4V alloy substrates using dipping sol-gel method and electrophoresis. The selection of sol/suspension composition, deposition time and heat treatment conditions have the decisive influence on the layers parameters. The obtained layers should be very thin and almost amorphous. The specific nature of ceramic layers on the metal substrates excludes the use of some measurements methods or makes it difficult to interpret the measurement results. All the obtained samples were compared using XRD analysis data (GID technique), SEM with EDX measurements and FTIR spectroscopy (transmission and reflection techniques) before and after soaking in simulated body fluid. FTIR spectroscopy with mathematical treatment of the spectra (BIO-RAD Win-IR program, Arithmetic-subtract function) was used to detect the increase or decrease of any phosphate phases during SBF soaking. Based on the FTIR results the processes of hydroxyapatite (HAp) growth or layer dissolution were estimated. The layers deposited on titanium substrate are more crystalline then the ones deposited on Ti6Al4V. During SBF soaking process the growth of small amount of microcrystalline carbonate hydroxyapatite was observed on titanium substrate. The layer on Ti6Al4V base contained amorphous carbonate apatite. During heating treatment above about 870-920 K this apatite transforms into carbonate hydroxyapatite. The Ti6Al4V substrate seems to be more advantageous in context of potentially bioactive materials obtaining. Copyright © 2010 Elsevier B.V. All rights reserved.

The comparison of phosphate-titanate-silicate layers on the titanium and Ti6Al4V alloy base

NASA Astrophysics Data System (ADS)

Rokita, M.

2011-08-01

The studied layers were composed of two parts: titanate-silicate underlayer for better adhesion and titanate-phosphate-silicate layers for potential bioparameters. The layers with different amounts of hydroxyapatite were deposited on titanium and Ti6Al4V alloy substrates using dipping sol-gel method and electrophoresis. The selection of sol/suspension composition, deposition time and heat treatment conditions have the decisive influence on the layers parameters. The obtained layers should be very thin and almost amorphous. The specific nature of ceramic layers on the metal substrates excludes the use of some measurements methods or makes it difficult to interpret the measurement results. All the obtained samples were compared using XRD analysis data (GID technique), SEM with EDX measurements and FTIR spectroscopy (transmission and reflection techniques) before and after soaking in simulated body fluid. FTIR spectroscopy with mathematical treatment of the spectra (BIO-RAD Win-IR program, Arithmetic-subtract function) was used to detect the increase or decrease of any phosphate phases during SBF soaking. Based on the FTIR results the processes of hydroxyapatite (HAp) growth or layer dissolution were estimated. The layers deposited on titanium substrate are more crystalline then the ones deposited on Ti6Al4V. During SBF soaking process the growth of small amount of microcrystalline carbonate hydroxyapatite was observed on titanium substrate. The layer on Ti6Al4V base contained amorphous carbonate apatite. During heating treatment above about 870-920 K this apatite transforms into carbonate hydroxyapatite. The Ti6Al4V substrate seems to be more advantageous in context of potentially bioactive materials obtaining.

Investigation on the effect of collagen and vitamins on biomimetic hydroxyapatite coating formation on titanium surfaces.

PubMed

Ciobanu, Gabriela; Ciobanu, Octavian

2013-04-01

This study uses an in vitro experimental approach to investigate the roles of collagen and vitamins in regulating the deposition of hydroxyapatite layer on the pure titanium surface. Titanium implants were coated with a hydroxyapatite layer under biomimetic conditions by using a supersaturated calcification solution (SCS), modified by adding vitamins A and D3, and collagen. The hydroxyapatite deposits on titanium were investigated by means of scanning electron microscopy (SEM) coupled with X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Fourier transformed infrared (FTIR) spectroscopy. The results obtained have shown that hydroxyapatite coatings were produced in vitro under vitamins and collagen influence. Copyright © 2012 Elsevier B.V. All rights reserved.

Surface characterization and corrosion behavior of calcium phosphate-base composite layer on titanium and its alloys via plasma electrolytic oxidation: A review paper.

PubMed

Rafieerad, A R; Ashra, M R; Mahmoodian, R; Bushroa, A R

2015-12-01

In recent years, calcium phosphate-base composites, such as hydroxyapatite (HA) and carbonate apatite (CA) have been considered desirable and biocompatible coating layers in clinical and biomedical applications such as implants because of the high resistance of the composites. This review focuses on the effects of voltage, time and electrolytes on a calcium phosphate-base composite layer in case of pure titanium and other biomedical grade titanium alloys via the plasma electrolytic oxidation (PEO) method. Remarkably, these parameters changed the structure, morphology, pH, thickness and crystallinity of the obtained coating for various engineering and biomedical applications. Hence, the structured layer caused improvement of the biocompatibility, corrosion resistance and assignment of extra benefits for Osseo integration. The fabricated layer with a thickness range of 10 to 20 μm was evaluated for physical, chemical, mechanical and tribological characteristics via XRD, FESEM, EDS, EIS and corrosion analysis respectively, to determine the effects of the applied parameters and various electrolytes on morphology and phase transition. Moreover, it was observed that during PEO, the concentration of calcium, phosphor and titanium shifts upward, which leads to an enhanced bioactivity by altering the thickness. The results confirm that the crystallinity, thickness and contents of composite layer can be changed by applying thermal treatments. The corrosion behavior was investigated via the potentiodynamic polarization test in a body-simulated environment. Here, the optimum corrosion resistance was obtained for the coating process condition at 500 V for 15 min in Ringer solution. This review has been summarized, aiming at the further development of PEO by producing more adequate titanium-base implants along with desired mechanical and biomedical features. Copyright © 2015 Elsevier B.V. All rights reserved.

Surface Modification Enhanced Reflection Intensity of Quartz Crystal Microbalance Sensors upon Molecular Adsorption.

PubMed

Kojima, Taisuke

2018-01-01

Molecular adsorption on a sensing surface involves molecule-substrate and molecule-molecule interactions. Combining optical systems and a quartz crystal microbalance (QCM) on the same sensing surface allows the quantification of such interactions and reveals the physicochemical properties of the adsorbed molecules. However, low sensitivity of the current reflection-based techniques compared to the QCM technique hinders the quantitative analysis of the adsorption events. Here, a layer-by-layer surface modification of a QCM sensor is studied to increase the optical sensitivity. The intermediate layers of organic-inorganic molecules and metal-metal oxide were explored on a gold (Au) surface of a QCM sensor. First, polyhedral oligomeric silsesquioxane-derivatives that served as the organic-inorganic intermediate layer were synthesized and modified on the Au-QCM surface. Meanwhile, titanium oxide, fabricated by anodic oxidation of titanium, was used as a metal-metal oxide intermediate layer on a titanium-coated QCM surface. The developed technique enabled interrogation of the molecular adsorption owing to the enhanced optical sensitivity.

Plasma surface tantalum alloying on titanium and its corrosion behavior in sulfuric acid and hydrochloric acid

NASA Astrophysics Data System (ADS)

Wei, D. B.; Chen, X. H.; Zhang, P. Z.; Ding, F.; Li, F. K.; Yao, Z. J.

2018-05-01

An anti-corrosion Ti-Ta alloy coating was prepared on pure titanium surface by double glow plasma surface alloying technology. Electrochemical corrosion test was applied to test the anti-corrosion property of Ti-Ta alloy layer. The microstructure and the phase composition of Ti-Ta alloy coating were detected before and after corrosion process by means of scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results showed that the Ta-Ti alloy layer has a thickness of about 13-15 μm, which is very dense without obvious defects such as pores or cracks. The alloy layer is composed mainly of β-Ta and α-Ti. The Ta alloy layer improves the anti-corrosion property of pure titanium. A denser and more durable TiO2 formed on the surface Ta-Ti alloy layer after immersing in strong corrosive media may account for the excellent corrosion resistant.

Surface Modifications of Materials by Electrochemical Methods to Improve the Properties for Industrial and Medical Applications

NASA Astrophysics Data System (ADS)

Benea, Lidia

2018-06-01

There are two applied electrochemical methods in our group in order to obtain advanced functional surfaces on materials: (i) direct electrochemical synthesis by electro-codeposition process and (ii) anodization of materials to form nanoporous oxide layers followed by electrodeposition of hydroxyapatite or other bioactive molecules and compounds into porous film. Electrodeposition is a process of low energy consumption, and therefore very convenient for the surface modification of various types of materials. Electrodeposition is a powerful method compared with other methods, which led her to be adopted and spread rapidly in nanotechnology to obtain nanostructured layers and films. Nanoporous thin oxide layers on titanum alloys as support for hydroxyapatite or other biomolecules electrodeposition in view of biomedical applications could be obtained by electrochemical methods. For surface modification of titanium or titanium alloys to improve the biocompatibility or osseointegration, the two steps must be fulfilled; the first is controlled growth of oxide layer followed by second being biomolecule electrodeposition into nanoporous formed titanium oxide layer.

Biomimetic whisker-shaped apatite coating of titanium powder.

PubMed

Sim, Young Uk; Kim, Jong Hee; Yang, Tae Young; Yoon, Seog Young; Park, Hong Chae

2010-05-01

Biomimetic apatite coatings on chemically modified titanium powder have been processed and the resulting coating layers evaluated in terms of morphology, composition and structure, using TF-XRD, XPS, SEM, TEM and FTIR analysis. After 7 days immersion in a simulated body fluid (SBF), nanometer-sized fine precipitates with an amorphous whisker-like phase and a Ca/P atomic ratio of 1.94 were obtained on the external surface of the titanium particles. When the immersion time in SBF was extended to 16 days, the coating layer consisted of the whisker-like nanostructured crystals of carbonated hydroxyapatite with a atomic ratio of 3; in such a case, a double coating layer was developed. The double layer could be divided into two regions and could be clearly distinguished: an inner dense region (approximately 200 nm in thickness) which may include hard agglomerated crystals and an outer less dense region (> 500 nm in thickness) in which crystals are loosely distributed.

Titanium bone implants with superimposed micro/nano-scale porosity and antibacterial capability

NASA Astrophysics Data System (ADS)

Necula, B. S.; Apachitei, I.; Fratila-Apachitei, L. E.; van Langelaan, E. J.; Duszczyk, J.

2013-05-01

This study aimed at producing a multifunctional layer with micro/nano-interconnected porosity and antibacterial capability on a rough macro-porous plasma sprayed titanium surface using the plasma electrolytic oxidation process. The layers were electrochemically formed in electrolytes based on calcium acetate and calcium glycerophosphate salts bearing dispersed Ag nanoparticles. They were characterized with respect to surface morphology and chemical composition using a scanning electron microscope equipped with the energy dispersive spectroscopy and back scattering detectors. Scanning electron microscopy images showed the formation of a micro/nano-scale porous layer, comprised of TiO2 bearing Ca and P species and Ag nanoparticles, following accurately the surface topography of the plasma sprayed titanium coating. The Ca/P atomic ratio was found to be close to that of bone apatite. Ag nanoparticles were incorporated on both on top and inside the porous structure of the TiO2 layer.

Efficiency enhancement of polymer solar cells by applying poly(vinylpyrrolidone) as a cathode buffer layer via spin coating or self-assembly.

PubMed

Wang, Haitao; Zhang, Wenfeng; Xu, Chenhui; Bi, Xianghong; Chen, Boxue; Yang, Shangfeng

2013-01-01

A non-conjugated polymer poly(vinylpyrrolidone) (PVP) was applied as a new cathode buffer layer in P3HT:PCBM bulk heterojunction polymer solar cells (BHJ-PSCs), by means of either spin coating or self-assembly, resulting in significant efficiency enhancement. For the case of incorporation of PVP by spin coating, power conversion efficiency (PCE) of the ITO/PEDOT:PSS/P3HT:PCBM/PVP/Al BHJ-PSC device (3.90%) is enhanced by 29% under the optimum PVP spin-coating speed of 3000 rpm, which leads to the optimum thickness of PVP layer of ~3 nm. Such an efficiency enhancement is found to be primarily due to the increase of the short-circuit current (J(sc)) (31% enhancement), suggesting that the charge collection increases upon the incorporation of a PVP cathode buffer layer, which originates from the conjunct effects of the formation of a dipole layer between P3HT:PCBM active layer and Al electrodes, the chemical reactions of PVP molecules with Al atoms, and the increase of the roughness of the top Al film. Incorporation of PVP layer by doping PVP directly into the P3HT:PCBM active layer leads to an enhancement of PCE by 13% under the optimum PVP doping ratio of 3%, and this is interpreted by the migration of PVP molecules to the surface of the active layer via self-assembly, resulting in the formation of the PVP cathode buffer layer. While the formation of the PVP cathode buffer layer is fulfilled by both fabrication methods (spin coating and self-assembly), the dependence of the enhancement of the device performance on the thickness of the PVP cathode buffer layer formed by self-assembly or spin coating is different, because of the different aggregation microstructures of the PVP interlayer.

Structure, composition and morphology of bioactive titanate layer on porous titanium surfaces

NASA Astrophysics Data System (ADS)

Li, Jinshan; Wang, Xiaohua; Hu, Rui; Kou, Hongchao

2014-07-01

A bioactive coating was produced on pore surfaces of porous titanium samples by an amendatory alkali-heat treatment method. Porous titanium was prepared by powder metallurgy and its porosity and average size were 45% and 135 μm, respectively. Coating morphology, coating structure and phase constituents were examined by SEM, XPS and XRD. It was found that a micro-network structure with sizes of <200 nm mainly composed of bioactive sodium titanate and rutile phases of TiO2 covered the interior and exterior of porous titanium cells, and redundant Ca ion was detected in the titanate layer. The concentration distribution of Ti, O, Ca and Na in the coating showed a compositional gradient from the intermediate layer toward the outer surface. These compositional gradients indicate that the coating bonded to Ti substrate without a distinct interface. After immersion into the SBF solution for 3 days, a bone-like carbonate-hydroxylapatite showing a good biocompatibility was detected on the coating surface. And the redundant Ca advanced the bioactivity of the coating. Thus, the present modification is expected to allow the use of the bioactive porous titanium as artificial bones even under load-bearing conditions.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer

NASA Astrophysics Data System (ADS)

Luo, W. B.; Zhu, J.; Li, Y. R.; Wang, X. P.; Zhang, Y.

2009-05-01

Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including θ-2θ and Φ scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2Pr=45 μC/cm2), excellent fatigue endurance (10.2% degradation after 1.1×1010 switching cycles), and a low leakage current density (1.94×10-7 A/cm2 at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Improvement of transmission properties of visible pilot beam for polymer-coated silver hollow fibers with acrylic silicone resin as buffer layer for sturdy structure

NASA Astrophysics Data System (ADS)

Iwai, Katsumasa; Takaku, Hiroyuki; Miyagi, Mitsunobu; Shi, Yi-Wei; Zhu, Xiao-Song; Matsuura, Yuji

2017-02-01

Flexible hollow fibers with 530-μm-bore size were developed for infrared laser delivery. Sturdy hollow fibers were fabricated by liquid-phase coating techniques. A silica glass capillary is used as the substrate. Acrylic silicone resin is used as a buffer layer and the buffer layer is firstly coated on the inner surface of the capillary to protect the glass tube from chemical damages due to the following silver plating process. A silver layer was inner-plated by using the conventional silver mirror-plating technique. To improve adhesion of catalyst to the buffer layer, a surface conditioner has been introduced in the method of silver mirror-plating technique. We discuss improvement of transmission properties of sturdy polymer-coated silver hollow fibers for the Er:YAG laser and red pilot beam delivery.

Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

PubMed

Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

2014-06-25

Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Discharge cell for ozone generator

DOEpatents

Nakatsuka, Suguru

2000-01-01

A discharge cell for use in an ozone generator is provided which can suppress a time-related reduction in ozone concentration without adding a catalytic gas such as nitrogen gas to oxygen gas as a raw material gas. The discharge cell includes a pair of electrodes disposed in an opposed spaced relation with a discharge space therebetween, and a dielectric layer of a three-layer structure consisting of three ceramic dielectric layers successively stacked on at least one of the electrodes, wherein a first dielectric layer of the dielectric layer contacting the one electrode contains no titanium dioxide, wherein a second dielectric layer of the dielectric layer exposed to the discharge space contains titanium dioxide in a metal element ratio of not lower than 10 wt %.

Effect of Homo-buffer Layers on the Properties of Sputtering Deposited Ga2O3 Films

NASA Astrophysics Data System (ADS)

Huang, Jian; Li, Bing; Ma, Yuncheng; Tang, Ke; Huang, Haofei; Hu, Yan; Zou, Tianyu; Wang, Linjun

2018-05-01

β- Ga2O3 films were grown by radio-frequency magnetron sputtering method. The influence of Ga2O3 buffer layers and annealing treatment on the structural, optical, morphological and electrical properties of Ga2O3 films was studied. The results revealed an improvement of crystalline quality and transmittance of annealed β- Ga2O3 films prepared with homo-buffer layers. Ga2O3 film UV photodetectors were fabricated with a new B and Ga co-doped ZnO films (BGZO)/Au interdigitated electrode. A good ohmic contact was formed between the film and the electrode. For the detector based on Ga2O3 films with buffer layers, a higher value of photo response and faster response times was obtained.

The structure of biocoats based on TiO2 doped with nitrogen study

NASA Astrophysics Data System (ADS)

Boytsova, E. L.; Leonova, L. A.; Pichugin, V. F.

2018-04-01

Nitrogen-doped titanium dioxide (N-TiO2) nanofilms were deposited by reactive magnetron sputtering under different bias voltage. The mode of sputtering influences to formation and properties of titanium films. X-ray diffraction (XRD) was used to study the phase transition and crystallinity of the nanofilms. A technique of layer-by-layer measurement of Raman scattering from nanostructured titanium dioxide films based on a preliminary sputtering of the films by argon beam under an angle of 45° and less has been developed. Experimentally confirmed low dissolution rate of the coating in NaCl saline (0.9%).

Trichite growth during oxidation of titanium and TA6V4 alloy by water vapor at high temperatures

NASA Technical Reports Server (NTRS)

Coddet, C.; Motte, F.; Sarrazin, P.

1982-01-01

Analysis by electron scanning microscope detected the formation of rutile trichites on the surface of specimens of titanium and titanium alloy TA6V4 oxidized in water vapor in the temperature range 650 to 950 C and the water vapor pressure range from 0.5 to 18 torr. In all specimens, two sublayers of rutile were formed: an external layer of basalt-like appearance, and a microcrystalline inner layer. Morphology of the trichites depends on temperature and the material (whether metal or alloy), but not on vapor pressure.

Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

PubMed

Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

2016-01-13

The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

Photovoltaic devices comprising zinc stannate buffer layer and method for making

DOEpatents

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

2001-01-01

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Queraltó, A.; Pérez del Pino, A., E-mail: aperez@icmab.es; Mata, M. de la

2015-06-29

Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than inmore » thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.« less

High energy X-ray diffraction study of a dental ceramics–titanium functional gradient material prepared by field assisted sintering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witte, K., E-mail: kerstin.witte@uni-rostock.de; Bodnar, W.; Schell, N.

A functional gradient material with eleven layers composed of a dental ceramics and titanium was successfully consolidated using field assisted sintering technique in a two-step sintering process. High energy X-ray diffraction studies on the gradient were performed at High Energy Material Science beamline at Desy in Hamburg. Phase composition, crystal unit edges and lattice mismatch along the gradient were determined applying Rietveld refinement procedure. Phase analysis revealed that the main crystalline phase present in the gradient is α-Ti. Crystallinity increases stepwisely along the gradient with a decreasing increment between every next layer, following rather the weight fraction of titanium. Themore » crystal unit edge a of titanium remains approximately constant with a value of 2.9686(1) Å, while c is reduced with increasing amount of titanium. In the layer with pure titanium the crystal unit edge c is constant with a value of 4.7174(2) Å. The lattice mismatch leading to an internal stress was calculated over the whole gradient. It was found that the maximal internal stress in titanium embedded in the studied gradient is significantly smaller than its yield strength, which implies that the structure of titanium along the whole gradient is mechanically stable. - Highlights: • High energy XRD studies of dental ceramics–Ti gradient material consolidated by FAST. • Phase composition, crystallinity and lattice parameters are determined. • Crystallinity increases stepwisely along the gradient following weight fraction of Ti. • Lattice mismatch leading to internal stress is calculated over the whole gradient. • Internal stress in α-Ti embedded in the gradient is smaller than its yield strength.« less

19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya. R. N.

2008-01-01

CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

Incorporating an Electrode Modification Layer with a Vertical Phase Separated Photoactive Layer for Efficient and Stable Inverted Nonfullerene Polymer Solar Cells.

PubMed

Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Li, Jinyan; Bai, Yiming; Wang, Fuzhi; Bian, Xingming; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2017-12-20

For bulk heterojunction polymer solar cells (PSCs), the donors and acceptors featuring specific phase separation and concentration distribution within the electron donor/acceptor blends crucially affect the exciton dissociation and charge transportation. Herein, efficient and stable nonfullerene inverted PSCs incorporating a phase separated photoactive layer and a titanium chelate electrode modification layer are demonstrated. Water contact angle (WCA), scanning kelvin probe microscopy (SKPM), and atomic force microscopy (AFM) techniques are implemented to characterize the morphology of photoactive layers. Compared with the control conventional device, the short-circuit current density (J sc ) is enhanced from 14.74 to 17.45 mAcm -2 . The power conversion efficiency (PCE) for the inverted PSCs with a titanium (diisopropoxide)-bis-(2,4-pentanedionate) (TIPD) layer increases from 9.67% to 11.69% benefiting from the declined exciton recombination and fairly enhanced charge transportation. Furthermore, the nonencapsulated inverted device with a TIPD layer demonstrates the best long-term stability, 85% of initial PCE remaining and an almost undecayed open-circuit voltage (V oc ) after 1440 h. Our results reveal that the titanium chelate is an excellent electrode modification layer to incorporate with a vertical phase separated photoactive layer for producing high-efficiency and high-stability inverted nonfullerene PSCs.

Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

NASA Astrophysics Data System (ADS)

Chuan, Lee Te; Rathi, Muhammad Fareez Mohamad; Abidin, Muhamad Yusuf Zainal; Abdullah, Hasan Zuhudi; Idris, Maizlinda Izwana

2015-07-01

Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm-2) at room temperature. Surface oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

DOE PAGES

Hsu, Weitse; Sutter-Fella, Carolin M.; Hettick, Mark; ...

2015-11-03

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UVmore » part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2/CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.« less

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Structural and luminescent Properties of Bulk InAsSb

DTIC Science & Technology

2011-12-21

have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1-x alloys and GaSb and InSb substrates in...wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1x alloys...long wave IR range. We used compositionally graded GaInSb, AlGaInSb, and InAsxSb1x metamorphic buffer layers to accommodate the misfit strain between

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

NASA Astrophysics Data System (ADS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-12-01

In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Chemically Deposited CdS Buffer/Kesterite Cu2ZnSnS4 Solar Cells: Relationship between CdS Thickness and Device Performance.

PubMed

Hong, Chang Woo; Shin, Seung Wook; Suryawanshi, Mahesh P; Gang, Myeng Gil; Heo, Jaeyeong; Kim, Jin Hyeok

2017-10-25

Earth-abundant, copper-zinc-tin-sulfide (CZTS), kesterite, is an attractive absorber material for thin-film solar cells (TFSCs). However, the open-circuit voltage deficit (V oc -deficit) resulting from a high recombination rate at the buffer/absorber interface is one of the major challenges that must be overcome to improve the performance of kesterite-based TFSCs. In this paper, we demonstrate the relationship between device parameters and performances for chemically deposited CdS buffer/CZTS-based heterojunction TFSCs as a function of buffer layer thickness, which could change the CdS/CZTS interface conditions such as conduction band or valence band offsets, to gain deeper insight and understanding about the V oc -deficit behavior from a high recombination rate at the CdS buffer/kesterite interface. Experimental results show that device parameters and performances are strongly dependent on the CdS buffer thickness. We postulate two meaningful consequences: (i) Device parameters were improved up to a CdS buffer thickness of 70 nm, whereas they deteriorated at a thicker CdS buffer layer. The V oc -deficit in the solar cells improved up to a CdS buffer thickness of 92 nm and then deteriorated at a thicker CdS buffer layer. (ii) The minimum values of the device parameters were obtained at 70 nm CdS thickness in the CZTS TFSCs. Finally, the highest conversion efficiency of 8.77% (V oc : 494 mV, J sc : 34.54 mA/cm 2 , and FF: 51%) is obtained by applying a 70 nm thick CdS buffer to the Cu 2 ZnSn(S,Se) 4 absorber layer.

A model of adsorption of albumin on the implant surface titanium and titanium modified carbon coatings (MWCNT-EPD). 2D correlation analysis

NASA Astrophysics Data System (ADS)

Wesełucha-Birczyńska, Aleksandra; Stodolak-Zych, Ewa; Piś, Wojciech; Długoń, Elżbieta; Benko, Aleksandra; Błażewicz, Marta

2016-11-01

Common materials used as orthopedic implants are titanium and its alloys. To improve its compatibility with the environment of a living organism titanium implant surfaces are covered with bioactive layers of MWCNT. During the insertion into a living organism such material is exposed to direct contact with the patient's blood, which includes proteins - eg. albumin. The adsorption of albumin may constitute one of the early stages of implant surface modification serving cell adhesion. An analysis of this phenomenon in terms of the kinetics of deposition of protein on the surface of the implant confirms its biocompatibility in vivo. The proposed working model of the adsorption of albumin allows for choosing the best of time for the protein to form a stable connection with the surface of the titanium implant. Traditional methods of materials engineering and chemistry allow for the obtaining of information about the presence of a protein on the surface (UV-Vis, the wettability). The application of 2D correlation analysis, in turn, gains insight into the dynamics of the changes associated with the deposition of protein (the formation of a uniform layer, the change in conformation). This analysis has allowed for the selection of an optimal time of protein adsorption to the surface of the implant. Better compatibility with the body of the implant provides its modification by introducing layers that accelerate the material-tissue interactions. Such a composition is a layer of carbon nanotubes (MWCNTs) deposited on titanium by the electrophoretic (EPD) method. Using Raman spectroscopy and analyzing the spectra with the 2D correlation method it is possible to gain insight into the molecular structure of this layer. Our studies indicate that albumin in contact with the surface of titanium has obtained stable conformation after 30 min (confirmed by: UV-Vis, Raman). Shifts of the CH2, CH3 stretching bands position as well as an analysis of the amide I band confirms this conformation. The dynamics of these changes are noticed as correlation peaks observed on 2D maps.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

NASA Astrophysics Data System (ADS)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to ~2times10^ {10} switching cycles), low dc leakage current, and excellent retention are observed in capacitor structures containing polycrystalline PZT (exhibiting dominant (001) and (100) XRD reflections), a Pt-RuO_2 hybrid bottom electrode (Type IA), and an RuO _2 top electrode. These results, and electrical characterization results on capacitors containing co-deposited Pt-RuO_2 hybrid electrodes (Type II), show potential for application of these capacitor structures in NVRAM and DRAM memory devices.

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

PubMed

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

An over 18%-efficiency completely buffer-free Cu(In,Ga)Se2 solar cell

NASA Astrophysics Data System (ADS)

Ishizuka, Shogo; Nishinaga, Jiro; Koida, Takashi; Shibata, Hajime

2018-07-01

In this letter, an independently certified photovoltaic efficiency of 18.4% demonstrated from a completely buffer-layer-free Cu(In,Ga)Se2 (CIGS) solar cell is reported. A Si-doped CIGS thin film was used as the photoabsorber layer and a conductive B-doped ZnO (BZO) front electrode layer was directly deposited on the CIGS layer. Metastable acceptor activation by heat-light soaking treatment was performed to maximize the efficiency. The results presented here are expected to serve as a benchmark for simplified-structure CIGS devices as well as a reference for discussions on the role of buffer layers used in conventional CIGS solar cells.

Medical equipment bio-capability processes using the atmospheric plasma-sprayed titanium coating

NASA Astrophysics Data System (ADS)

Rezaei, F.; Saviz, S.; Ghoranneviss, M.

2017-12-01

Antibacterial surfaces such as titanium coatings are able to have capability in the human body environment. In this study, titanium coatings are deposited on the 316 stainless steel substrates by a handmade plasma spray system. Some mechanical, chemical properties and microstructure of the created titanium layer are determined to evaluate the quality of coating. The XRD, SEM, adhesion tests from cross cut and corrosion test by potentiodynamic are used. During the different stages, some of the parameters are changed in different samples to achieve the best quality in the coating. It is shown that by increasing the spray time, the production of nanoparticles begins. On the other hand, the best layers are created when the spray main gas flow rate has a certain amount.

Peculiarities of structure formation of layered metal-oxide system Ti-Ta-(Ti,Ta)xOy during electro-spark alloying and thermally stimulated modification

NASA Astrophysics Data System (ADS)

Fomina, Marina A.; Koshuro, Vladimir A.; Fomin, Aleksandr A.; Rodionov, Igor V.; Skaptsov, Aleksandr A.; Zakharevich, Andrey M.; Aman, Alexander; Oseev, Aleksandr; Hirsch, Soeren; Majcherek, Soeren

2016-04-01

The study focuses on high-performance combined electro-spark alloying of titanium and titanium alloy (VT1-0, VT16) surface and porous matrix structure oxidation. The metal-oxide coatings morphology is the result of melt drop transfer, heat treatment, and oxidation. The study establishes the influence of technological regimes of alloying and oxidation on morphological heterogeneity of biocompatible layered metal-oxide system Ti-Ta-(Ti,Ta)xOy. It was found that during electro-spark alloying the concentration of tantalum on the titanium surface ranges from 0.1 to 3.2 at.%. Morphology of the deposited splats is represented by uniformly grown crystals of titanium and tantalum oxides, which increase from nano- to submicron size.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities

NASA Astrophysics Data System (ADS)

Yoo, Young‑Zo; Song, Jeong‑Hwan; Konishi, Yoshinori; Kawasaki, Masashi; Koinuma, Hideomi; Chikyow, Toyohiro

2006-03-01

Epitaxial SrTiO3 (STO) thin films with high electrical properties were grown on Si using ZnS single- and SrS/MnS hetero-buffer layers. STO films on both ZnS-buffered and SrS/MnS-buffered Si showed two growth orientations, (100) and (110). The temperature dependence of the growth orientation for STO films was different for the ZnS single-buffer layer in comparison with the SrS/MnS heterobuffer layers. (100) growth of STO films on SrS/MnS-buffered Si became dominant at high temperatures about 700 °C, while (100) growth of STO films on ZnS-buffered Si became dominant at a relatively low growth temperature of 550 °C. STO(100) films on ZnS-buffered and SrS/MnS-buffered Si showed lattice and domain matches for epitaxial relationships with [001]ZnS\\parallel[011]STO and SrS[001]\\parallel[011]STO, respectively via 45° in-plane rotation of STO films relative to both ZnS and SrS layers. The ZnS buffer layer contained many stacking faults because of the mismatch between ZnS and Si, however, those defects were terminated at the ZnS/STO interface. In contrast, the MnS buffer was very stable against stacking defect formation. Transmission electron microscopy measurements revealed the presence of a disordered region at the ZnS/Si and MnS/Si interfaces. Auger electron spectroscopy and transmission electron microscopy results showed that a good MnS/Si interface at the initial growth stage degraded to a SiS2-x-rich phase during MnS deposition and again into a SiO2-x-rich phase during STO deposition at the high growth temperature of 700 °C. It was also observed that STO on SrS/MnS-buffered Si showed a markedly high dielectric constant compared with that of STO on ZnS-buffered Si.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

PubMed

Courtright, Brett A E; Jenekhe, Samson A

2015-12-02

We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability.

Tribocorrosion behavior of beta titanium biomedical alloys in phosphate buffer saline solution.

PubMed

Pina, V Guiñón; Dalmau, A; Devesa, F; Amigó, V; Muñoz, A Igual

2015-06-01

The tribo-electrochemical behavior of different β titanium alloys for biomedical applications sintered by powder metallurgy has been investigated. Different mechanical, electrochemical and optical techniques were used to study the influence of the chemical composition, Sn content, and the electrochemical conditions on the tribocorrosion behavior of those alloys Ti30NbxSn alloys (where "x" is the weight percentage of Sn content, 2% and 4%). Sn content increases the active and passive dissolution rate of the titanium alloys, thus increasing the mechanically activated corrosion under tribocorrosion conditions. It also increases the mechanical wear of the alloy. Prevailing electrochemical conditions between -1 and 2V influences the wear accelerated corrosion by increasing it with the applied potential and slightly increases the mechanical wear of Ti30Nb4Sn. Wear accelerated corrosion can be predicted by existing models as a function of electrochemical and mechanical parameters of the titanium alloys. Copyright © 2015 Elsevier Ltd. All rights reserved.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

Properties of unrelaxed InAs{sub 1-X}Sb{sub X} alloys grown on compositionally graded buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belenky, G.; Donetsky, D.; Kipshidze, G.

Unrelaxed InAs{sub 1-x}Sb{sub x} layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs{sub 1-x}Sb{sub x} with given X. The InAs{sub 0.56}Sb{sub 0.44} layers demonstrate photoluminescence peak at 9.4 {mu}m at 150 K. The minority carrier lifetime measured at 77 K for InAs{sub 0.8}Sb{sub 0.2} was {tau} = 250 ns.

Characterization and cell behavior of titanium surfaces with PLL/DNA modification via a layer-by-layer technique.

PubMed

Gao, Wenli; Feng, Bo; Lu, Xiong; Wang, Jianxin; Qu, Shuxin; Weng, Jie

2012-08-01

This study describes the fabrication of two types of multilayered films onto titanium by layer-by-layer (LBL) self-assembly, using poly-L-lysine (PLL) as the cationic polyelectrolyte and deoxyribonucleic acid (DNA) as the anionic polyelectrolyte. The assembling process of each component was studied using atomic force microscopy (AFM) and quartz crystal balance (QCM). Zeta potential of the LBL-coated microparticles was measured by dynamic light scattering. Titanium substrates with or without multilayered films were used in osteoblast cell culture experiments to study cell proliferation, viability, differentiation, and morphology. Results of AFM and QCM indicated the progressive build-up of the multilayered coatings. The surface morphology of three types of multilayered films showed elevations in the nanoscale range. The data of zeta potential showed that the surface terminated with PLL displayed positive charge while the surface terminated with DNA displayed negative charge. The proliferation of osteoblasts on modified titanium films was found to be greater than that on control (p < 0.05) after 3 and 7 days culture, respectively. Alamar blue measurement showed that the PLL/DNA-modified films have higher cell viability (p < 0.05) than the control. Still, the alkaline phosphatase activity assay revealed a better differentiated phenotype on three types of multilayered surfaces compared to noncoated controls. Collectively our results suggest that PLL/DNA were successfully used to surface engineer titanium via LBL technique, and enhanced its cell biocompatibility. Copyright © 2012 Wiley Periodicals, Inc.

Microstructure and properties of Ti-Al intermetallic/Al2O3 layers produced on Ti6Al2Mo2Cr titanium alloy by PACVD method

NASA Astrophysics Data System (ADS)

Sitek, R.; Bolek, T.; Mizera, J.

2018-04-01

The paper presents investigation of microstructure and corrosion resistance of the multi-component surface layers built of intermetallic phases of the Ti-Al system and an outer Al2O3 ceramic sub-layer. The layers were produced on a two phase (α + β) Ti6Al2Mo2Cr titanium alloy using the PACVD method with the participation of trimethylaluminum vapors. The layers are characterized by a high surface hardness and good corrosion, better than that of these materials in the starting state. In order to find the correlation between their structure and properties, the layers were subjected to examinations using optical microscopy, X-ray diffraction analysis (XRD), surface analysis by XPS, scanning electron microscopy (SEM), and analyses of the chemical composition (EDS). The properties examined included: the corrosion resistance and the hydrogen absorptiveness. Moreover growth of the Al2O3 ceramic layer and its influence on the residual stress distribution was simulated using finite element method [FEM]. The results showed that the produced layer has amorphous-nano-crystalline structure, improved corrosion resistance and reduces the permeability of hydrogen as compared with the base material of Ti6Al2Mo2Cr -titanium alloy.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

NASA Astrophysics Data System (ADS)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

Bioactive borate glass coatings for titanium alloys.

PubMed

Peddi, Laxmikanth; Brow, Richard K; Brown, Roger F

2008-09-01

Bioactive borate glass coatings have been developed for titanium and titanium alloys. Glasses from the Na(2)O-CaO-B(2)O(3) system, modified by additions of SiO(2), Al(2)O(3), and P(2)O(5), were characterized and compositions with thermal expansion matches to titanium were identified. Infrared and X-ray diffraction analyses indicate that a hydroxyapatite surface layer forms on the borate glasses after exposure to a simulated body fluid for 2 weeks at 37 degrees C; similar layers form on 45S5 Bioglass((R)) exposed to the same conditions. Assays with MC3T3-E1 pre-osteoblastic cells show the borate glasses exhibit in vitro biocompatibility similar to that of the 45S5 Bioglass((R)). An enameling technique was developed to form adherent borate glass coatings on Ti6Al4V alloy, with adhesive strengths of 36 +/- 2 MPa on polished substrates. The results show these new borate glasses to be promising candidates for forming bioactive coatings on titanium substrates.

Cathode buffer composed of fullerene-ethylenediamine adduct for an organic solar cell

NASA Astrophysics Data System (ADS)

Kimoto, Yoshinori; Akiyama, Tsuyoshi; Fujita, Katsuhiko

2017-02-01

We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (V oc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, V oc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the V oc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the V oc.

Metal Matrix Composite Material by Direct Metal Deposition

NASA Astrophysics Data System (ADS)

Novichenko, D.; Marants, A.; Thivillon, L.; Bertrand, P. H.; Smurov, I.

Direct Metal Deposition (DMD) is a laser cladding process for producing a protective coating on the surface of a metallic part or manufacturing layer-by-layer parts in a single-step process. The objective of this work is to demonstrate the possibility to create carbide-reinforced metal matrix composite objects. Powders of steel 16NCD13 with different volume contents of titanium carbide are tested. On the base of statistical analysis, a laser cladding processing map is constructed. Relationships between the different content of titanium carbide in a powder mixture and the material microstructure are found. Mechanism of formation of various precipitated titanium carbides is investigated.

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2015-08-15

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for themore » (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.« less

The influence of coating solution and calcination condition on the durability of Ir1-xSnxO2/Ti anodes for oxygen evolution

NASA Astrophysics Data System (ADS)

Kato, Zenta; Kashima, Ryo; Tatsumi, Kohei; Fukuyama, Shinnosuke; Izumiya, Koichi; Kumagai, Naokazu; Hashimoto, Koji

2016-12-01

For oxygen formation without forming chlorine in seawater electrolysis for hydrogen production we have been using the anode consisting of three layers of MnO2-type multiple oxide catalyst, intermediate layer and titanium substrate. The intermediate layer was used for prevention of oxidation of the titanium substrate during anodic polarization for oxygen evolution and was prepared by calcination of butanol solutions of H2IrCl6 and SnCl4 coated on titanium. The protectiveness of Ir1-xSnxO2 layer formed was directly examined using Ir1-xSnxO2/Ti anodes in H2SO4 solution changing the preparation conditions of the layer. When the sum of Ir4+ and Sn4+ was 0.1 M, the highest protectiveness was observed at 0.06 M Sn4+. Although an increase in calcination temperature led to the formation of Ir1-x-ySnxTiyO2 triple oxide with a slightly lower catalytic activity for oxygen evolution, the anode calcined at 450 °C showed the highest protectiveness.

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

Biofunctionalization of Titanium Granules with Simvastatin for Improving Osteogenic Activity and Antibacterial Properties (Ex Vivo Study).

PubMed

Karaji, Zahra Gorgin; Houshmand, Behzad; Abbasi, Shahsanam; Shafiei, Sara; Faghihi, Shahab

Titanium-based biomaterials present good biocompatibility, while their osseointegration and antibacterial properties need to be improved. This study aimed to enhance the bone-bonding ability of titanium-based granules, which are intended to be used as bone graft. The titanium granules were anodized in ethylene glycol-based electrolyte and subsequently annealed to be loaded separately with simvastatin. The samples were then inspected with attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) for drug loading. The release of simvastatin from titanium granule samples was measured after soaking samples in phosphate-buffered saline (PBS) for 30 days using ultraviolet-visible (UV/Vis) spectroscopy. The alkaline phosphatase (ALP) activity of MG63 osteosarcoma-loaded samples was measured, and microbroth dilution assay was performed to evaluate the antibacterial potential of drug-loaded and nonloaded titanium granule samples for bacterial growth. The results expressed the gradual and constant release of simvastatin within the duration of the examination. ALP of the samples showed improved activity of anodized and annealed granules, while the antibacterial test illustrated no significant improvement in their bactericidal effects. However, the simvastatin-loaded samples showed an improved antibacterial effect compared with nonloaded samples. It is assumed that anodizing, annealing, and subsequent simvastatin loading of titanium granules could be used as surface modification to improve osseointegration and restrain bacterial growth and adhesion. It is fair to believe that the results of this study could be used to treat titanium granules as bone graft substitute materials for dental and orthopedic applications.

Adhesion properties in systems of laminated pigmented polymers, carbon-graphite fiber composite framework and titanium surfaces in implant suprastructures.

PubMed

Segerström, Susanna; Ruyter, I Eystein

2009-09-01

For long-term stability the adhering interfaces of an implant-retained supraconstruction of titanium/carbon-graphite fiber-reinforced (CGFR) polymer/opaquer layer/denture base polymer/denture teeth must function as a unity. The aim was to evaluate adhesion of CGFR polymer to a titanium surface or CGFR polymer to two different opaquer layers/with two denture base polymers. Titanium plates were surface-treated and silanized and combined with a bolt of CGFR polymer or denture base polymer (Probase Hot). Heat-polymerized plates of CGFR polymer (47 wt% fiber) based on poly(methyl methacrylate) and a copolymer matrix were treated with an opaquer (Sinfony or Ropak) before a denture base polymer bolt was attached (Probase Hot or Lucitone 199). All specimens were heat-polymerized, water saturated (200 days) and thermally cycled (5000 cycles, 5/55 degrees C) before shear bond testing. Silicatized titanium surfaces gave higher bond strength to CGFR polymer (16.2+/-2.34 and 18.6+/-1.32) MPa and cohesive fracture than a sandblasted surface (5.9+/-2.11) MPa where the fracture was adhesive. The opaquer Sinfony gave higher adhesion values and mainly cohesive fractures than the opaquer Ropak. Different surface treatments (roughened or polished) of the CGFR polymer had no effect on bond strength. The fracture surfaces of silicatized titanium/CGFR polymer/opaquer layer (Sinfony)/denture base polymers were mainly cohesive. A combination of these materials in an implant-retained supraconstruction is promising for in vivo evaluation.

Perovskite solar cells in N-I-P structure with four slot-die-coated layers

PubMed Central

Burkitt, Daniel; Searle, Justin

2018-01-01

The fabrication of perovskite solar cells in an N-I-P structure with compact titanium dioxide blocking, mesoporous titanium dioxide scaffold, single-step perovskite and hole-transport layers deposited using the slot-die coating technique is reported. Devices on fluorine-doped tin oxide-coated glass substrates with evaporated gold top contacts and four slot-die-coated layers are demonstrated, and best cells reach stabilized power conversion efficiencies of 7%. This work demonstrates the suitability of slot-die coating for the production of layers within this perovskite solar cell stack and the potential to transfer to large area and roll-to-roll manufacturing processes. PMID:29892402

Tribocorrosion behaviour of anodic treated titanium surfaces intended for dental implants

NASA Astrophysics Data System (ADS)

Alves, A. C.; Oliveira, F.; Wenger, F.; Ponthiaux, P.; Celis, J.-P.; Rocha, L. A.

2013-10-01

Tribocorrosion plays an important role in the lifetime of metallic implants. Once implanted, biomaterials are subjected to micro-movements in aggressive biological fluids. Titanium is widely used as an implant material because it spontaneously forms a compact and protective nanometric thick oxide layer, mainly TiO2, in ambient air. That layer provides good corrosion resistance, and very low toxicity, but its low wear resistance is a concern. In this work, an anodizing treatment was performed on commercial pure titanium to form a homogeneous thick oxide surface layer in order to provide bioactivity and improve the biological, chemical and mechanical properties. Anodizing was performed in an electrolyte containing β-glycerophosphate and calcium acetate. The influence of the calcium acetate content on the tribocorrosion behaviour of the anodized material was studied. The concentration of calcium acetate in the electrolyte was found to largely affect the crystallographic structure of the resulting oxide layer. Better tribocorrosion behaviour was noticed on increasing the calcium acetate concentration.

Welding of titanium and nickel alloy by combination of explosive welding and spark plasma sintering technologies

NASA Astrophysics Data System (ADS)

Malyutina, Yu. N.; Bataev, A. A.; Mali, V. I.; Anisimov, A. G.; Shevtsova, L. I.

2015-10-01

A possibility of titanium and nickel-based alloys composite materials formation using combination of explosive welding and spark plasma sintering technologies was demonstrated in the current research. An employment of interlayer consisting of copper and tantalum thin plates makes possible to eliminate a contact between metallurgical incompatible titanium and nickel that are susceptible to intermetallic compounds formation during their interaction. By the following spark plasma sintering process the bonding has been received between titanium and titanium alloy VT20 through the thin powder layer of pure titanium that is distinguished by low defectiveness and fine dispersive structure.

Welding of titanium and nickel alloy by combination of explosive welding and spark plasma sintering technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malyutina, Yu. N., E-mail: iuliiamaliutina@gmail.com; Bataev, A. A., E-mail: bataev@adm.nstu.ru; Shevtsova, L. I., E-mail: edeliya2010@mail.ru

A possibility of titanium and nickel-based alloys composite materials formation using combination of explosive welding and spark plasma sintering technologies was demonstrated in the current research. An employment of interlayer consisting of copper and tantalum thin plates makes possible to eliminate a contact between metallurgical incompatible titanium and nickel that are susceptible to intermetallic compounds formation during their interaction. By the following spark plasma sintering process the bonding has been received between titanium and titanium alloy VT20 through the thin powder layer of pure titanium that is distinguished by low defectiveness and fine dispersive structure.

Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chuan, Lee Te, E-mail: gd130079@siswa.uthm.edu.my; Rathi, Muhammad Fareez Mohamad, E-mail: cd110238@siswa.uthm.edu.my; Abidin, Muhamad Yusuf Zainal, E-mail: cd110221@siswa.uthm.edu.my

Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm{sup −2}) at room temperature. Surfacemore » oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.« less

Corrosion resistant PEM fuel cell

DOEpatents

Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen Joel; Doll, Gary Lynn

2001-07-17

The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.

Corrosion resistant PEM fuel cell

DOEpatents

Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen Joel; Doll, Gary Lynn

2002-01-01

The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.

Corrosion resistant PEM fuel cell

DOEpatents

Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen J.; Doll, Gary L.

1997-01-01

The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.

Calculation of the superconducting transition temperature of a graphene layer doped with titanium and palladium

NASA Astrophysics Data System (ADS)

Vazquez, Gerardo; Magana, Fernando; Salas-Torres, Osiris

We explore the structural interactions between graphene and transition metals such as palladium (Pd) and titanium (Ti) and the possibility of inducing superconductivity in a graphene sheet in two cases, one by doping its surface with palladium atoms sit on the center of the hexagons of the graphene layer and other by covering the graphene layer with two layers of titanium metal atoms. The results here were obtained from first-principles density functional theory in the local density approximation. The Quantum-Espresso package was used with norm conserving pseudopotentials. All of the structures considered were relaxed to their minimum energy configuration. Phonon frequencies were calculated using the linear-response technique on several phonon wave-vector mesh. The electron-phonon coupling parameter was calculated with several electron momentum k-mesh. The superconducting critical temperature was estimated using the Allen-Dynes formula with μ* = 0.1 - 0.15. We note that palladium and titanium are good candidate materials to show a metal-to-superconductor transition. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

Simple O2 plasma-processed V2O5 as an anode buffer layer for high-performance polymer solar cells.

PubMed

Bao, Xichang; Zhu, Qianqian; Wang, Ting; Guo, Jing; Yang, Chunpeng; Yu, Donghong; Wang, Ning; Chen, Weichao; Yang, Renqiang

2015-04-15

A simple O2 plasma processing method for preparation of a vanadium oxide (V2O5) anode buffer layer on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs) is reported. The V2O5 layer with high transmittance and good electrical and interfacial properties was prepared by spin coating a vanadium(V) triisopropoxide oxide alcohol solution on ITO and then O2 plasma treatment for 10 min [V2O5 (O2 plasma)]. PSCs based on P3HT:PC61BM and PBDTTT-C:PC71BM using V2O5 (O2 plasma) as an anode buffer layer show high power conversion efficiencies (PCEs) of 4.47 and 7.54%, respectively, under the illumination of AM 1.5G (100 mW/cm(2)). Compared to that of the control device with PBDTTT-C:PC71BM as the active layer and PSS (PCE of 6.52%) and thermally annealed V2O5 (PCE of 6.27%) as the anode buffer layer, the PCE was improved by 15.6 and 20.2%, respectively, after the introduction of a V2O5 (O2 plasma) anode buffer layer. The improved PCE is ascribed to the greatly improved fill factor and enhanced short-circuit current density of the devices, which benefited from the change in the work function of V2O5, a surface with many dangling bonds for better interfacial contact, and the excellent charge transport property of the V2O5 (O2 plasma) layer. The results indicate that an O2 plasma-processed V2O5 film is an efficient and economical anode buffer layer for high-performance PSCs. It also provides an attractive choice for low-cost fabrication of organic electronics.

Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

NASA Astrophysics Data System (ADS)

Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

2016-04-01

Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films

NASA Astrophysics Data System (ADS)

Sasaki, Daisuke; Anh, Le Duc; Nam Hai, Pham; Tanaka, Masaaki

2014-04-01

We systematically investigated the influence of strain on the electronic structure and ferromagnetism of (In,Fe)As thin films. It is found that while the shift of the critical point energies of compressive-strained (In,Fe)As layers grown on (In1-y,Gay)As (y = 0.05, 0.1) buffer layers can be explained by the hydrostatic deformation effect (HDE) alone, those of tensile-strained (In,Fe)As layers grown on (Ga1-z,Alz)Sb (z = 0, 0.5, 1) buffer layers can be explained by the combination of HDE and the quantum confinement effect (QCE). The Curie temperature TC of the (In,Fe)As layers strongly depends on the strain, and shows a maximum for the (In,Fe)As layer grown on a GaSb buffer layer. The strain dependence of TC can be explained by the s-d exchange mechanism taking into account HDE and QCE.

Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon.

PubMed

Veronesi, Francesca; Giavaresi, Gianluca; Fini, Milena; Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Panzini, Gianluca; Misiano, Carlo; Palattella, Alberto; Selleri, Paolo; Di Girolamo, Nicola; Garbarino, Viola; Politi, Laura; Scandurra, Roberto

2017-01-01

Titanium implants coated with a 500nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p<0.005) and Bone Formation Rate (BFR, μm 2 /μm/day) (p<0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p<0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. Copyright © 2016. Published by Elsevier B.V.

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K.; Sharma, Mahesh C.

2015-08-28

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5more » eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.« less

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

NASA Technical Reports Server (NTRS)

Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

1995-01-01

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

Buffer layer between a planar optical concentrator and a solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solano, Manuel E.; Barber, Greg D.; Department of Chemistry, Pennsylvania State University, University Park, PA 16802

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structuremore » increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.« less

Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions.

PubMed

Chen, Yunzhong; Green, Robert J; Sutarto, Ronny; He, Feizhou; Linderoth, Søren; Sawatzky, George A; Pryds, Nini

2017-11-08

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO 3 (STO) achieved using polar La 7/8 Sr 1/8 MnO 3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant X-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

NASA Astrophysics Data System (ADS)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Characterization of TiN, TiC and Ti(C,N) in titanium-alloyed ferritic chromium steels focusing on the significance of different particle morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michelic, S.K., E-mail: susanne.michelic@unileoben.ac.at; Loder, D.; Reip, T.

2015-02-15

Titanium-alloyed ferritic chromium steels are a competitive option to classical austenitic stainless steels owing to their similar corrosion resistance. The addition of titanium significantly influences their final steel cleanliness. The present contribution focuses on the detailed metallographic characterization of titanium nitrides, titanium carbides and titanium carbonitrides with regard to their size, morphology and composition. The methods used are manual and automated Scanning Electron Microscopy with Energy Dispersive X-ray Spectroscopy as well as optical microscopy. Additional thermodynamic calculations are performed to explain the precipitation procedure of the analyzed titanium nitrides. The analyses showed that homogeneous nucleation is decisive at an earlymore » process stage after the addition of titanium. Heterogeneous nucleation gets crucial with ongoing process time and essentially influences the final inclusion size of titanium nitrides. A detailed investigation of the nuclei for heterogeneous nucleation with automated Scanning Electron Microscopy proved to be difficult due to their small size. Manual Scanning Electron Microscopy and optical microscopy have to be applied. Furthermore, it was found that during solidification an additional layer around an existing titanium nitride can be formed which changes the final inclusion morphology significantly. These layers are also characterized in detail. Based on these different inclusion morphologies, in combination with thermodynamic results, tendencies regarding the formation and modification time of titanium containing inclusions in ferritic chromium steels are derived. - Graphical abstract: Display Omitted - Highlights: • The formation and modification of TiN in the steel 1.4520 was examined. • Heterogeneous nucleation essentially influences the final steel cleanliness. • In most cases heterogeneous nuclei in TiN inclusions are magnesium based. • Particle morphology provides important information on inclusion formation.« less

Improved fill factor in inverted planar perovskite solar cells with zirconium acetate as the hole-and-ion-blocking layer.

PubMed

Zhang, Xuewen; Liang, Chunjun; Sun, Mengjie; Zhang, Huimin; Ji, Chao; Guo, Zebang; Xu, Yajun; Sun, Fulin; Song, Qi; He, Zhiqun

2018-03-14

Planar perovskite solar cells (PSCs) have gained great interest due to their low-temperature solution preparation and simple process. In inverted planar PSCs, an additional buffer layer is usually needed on the top of the PCBM electron-transport layer (ETL) to enhance the device performance. In this work, we used a new buffer layer, zirconium acetate (Zr(Ac) 4 ). The inclusion of the Zr(Ac) 4 buffer layer leads to the increase of FF from ∼68% to ∼79% and PCE from ∼14% to ∼17% in the planar PSCs. The UPS measurement indicates that the Zr(Ac) 4 layer has a low HOMO level of -8.2 eV, indicating that the buffer layer can act as a hole-blocking layer. Surface morphology and surface chemistry investigations reveal that the elements I, MA and Pb can diffuse across the PCBM ETL, damaging the device performance. The covering Zr(Ac) 4 molecules fill in the pinholes of the PCBM layer and effectively block the ions/molecules of the perovskite from diffusion across the ETL. The resulting more robust PCBM/Zr(Ac) 4 ETL leads to weaker ionic charge accumulation and lower diode leakage current. The double role of hole-and-ion blocking of the Zr(Ac) 4 layer explains the improved FF and PCE in the PSCs.

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

High power RF window deposition apparatus, method, and device

DOEpatents

Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

2017-07-04

A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

FIBER AND INTEGRATED OPTICS: Investigation of a fiber-optic polarizer with a metal film and a dielectric buffer layer

NASA Astrophysics Data System (ADS)

Gelikonov, V. M.; Gusovskiĭ, D. D.; Konoplev, Yu N.; Leonov, V. I.; Mamaev, Yu A.; Turkin, A. A.

1990-01-01

A model of a plane-layer waveguide is used in a theoretical analysis of the attenuation coefficients of the TM0 and TE0 waves in a fiber-optic polarizer with a metal film and two dielectric buffer layers, one of which is the residual part of the fiber cladding. A report is given of the construction and experimental investigation of polarizers with a buffer layer of magnesium fluoride and an aluminum film operating at wavelengths of 0.63 and 0.81 μm and characterized by extinction coefficients of at least 53 and 46 dB, respectively, and by losses not exceeding 0.5 dB.

Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Ex Situ Investigation of Anisotropic Interconnection in Silicon-Titanium-Nickel Alloy Anode Material

DOE PAGES

Cho, Jong -Soo; Alaboina, Pankaj Kumar; Kang, Chan -Soon; ...

2017-03-10

Herein we investigate the nanostructural evolution of Silicon-Titanium-Nickel (Si-Ti-Ni) ternary alloy material synthesized by melt spinning process for advanced lithium-ion battery anode. The synthesized material was found to have nano-Silicon particles dispersed in the Ti 4Ni 4Si 7 (STN) alloy buffering matrix and was characterized by X-ray diffraction (XRD), High resolution- transmission electron microscope (HR-TEM), Scanning transmission electron microscopes - energy dispersive X-ray spectrometer (STEM-EDS), and electrochemical performance test. The role of STN matrix is to accommodate the volume expansion stresses of the dispersed Si nanoparticles. However, an interesting behavior was observed during cycling. The Si nanoparticles were observed tomore » form interconnection channels growing through the weak STN matrix cracks and evolving to a network isolating the STN matrix into small puddles. In conclusion, this unique nanostructural evolution of Si particles and isolation of the STN matrix failing to offer significant buffering effect to the grown Si network eventually accelerates more volume expansions during cycling due to less mechanical confinement and leads to performance degradation and poor cycle stability.« less

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

PubMed Central

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C

2012-01-01

Summary Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased. PMID:22497001

Junction formation of Cu(3)BiS(3) investigated by Kelvin probe force microscopy and surface photovoltage measurements.

PubMed

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C; Sadewasser, Sascha

2012-01-01

Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu(3)BiS(3) absorber layer and the junction formation with CdS, ZnS and In(2)S(3) buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20-100 nm, and a considerably smaller work-function distribution for In(2)S(3) compared to that of CdS and ZnS. For In(2)S(3) and CdS buffer layers the KPFM experiments indicate negatively charged Cu(3)BiS(3) grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In(2)S(3) buffer layer. Our findings indicate that Cu(3)BiS(3) may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Surface modification of titanium substrates with silver nanoparticles embedded sulfhydrylated chitosan/gelatin polyelectrolyte multilayer films for antibacterial application.

PubMed

Li, Wen; Xu, Dawei; Hu, Yan; Cai, Kaiyong; Lin, Yingcheng

2014-06-01

To develop Ti implants with potent antibacterial activity, a novel "sandwich-type" structure of sulfhydrylated chitosan (Chi-SH)/gelatin (Gel) polyelectrolyte multilayer films embedding silver (Ag) nanoparticles was coated onto titanium substrate using a spin-assisted layer-by-layer assembly technique. Ag ions would be enriched in the polyelectrolyte multilayer films via the specific interactions between Ag ions and -HS groups in Chi-HS, thus leading to the formation of Ag nanoparticles in situ by photo-catalytic reaction (ultraviolet irradiation). Contact angle measurement and field emission scanning electron microscopy equipped with energy dispersive X-ray spectroscopy were employed to monitor the construction of Ag-containing multilayer on titanium surface, respectively. The functional multilayered films on titanium substrate [Ti/PEI/(Gel/Chi-SH/Ag) n /Gel] could efficiently inhibit the growth and activity of Bacillus subtitles and Escherichia coli onto titanium surface. Moreover, studies in vitro confirmed that Ti substrates coating with functional multilayer films remained the biological functions of osteoblasts, which was reflected by cell morphology, cell viability and ALP activity measurements. This study provides a simple, versatile and generalized methodology to design functional titanium implants with good cyto-compatibility and antibacterial activity for potential clinical applications.

Polarization-Dependent Raman Spectroscopy of Epitaxial TiO 2 (B) Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jokisaari, Jacob R.; Bayerl, Dylan; Zhang, Kui

2015-12-08

The bronze polymorph of titanium dioxide, known as TiO 2(B), has promising photochemical and electronic properties for potential applications in Li-ion batteries, photocatalysis, chemical sensing, and solar cells. In contrast to previous studies performed with powder samples, which often suffer from impurities and lattice water, here we report Raman spectra from highly crystalline TiO 2(B) films epitaxially grown on Si substrates with a thin SrTiO 3 buffer layer. The reduced background from the Si substrate significantly benefits acquisition of polarization-dependent Raman spectra collected from the high-quality thin films, which are compared to nanopowder results reported in the literature. The experimentalmore » spectra were compared with density functional theory calculations to analyze the atomic displacements associated with each Raman-active vibrational mode. These results provide a standard reference for further investigation of the crystallinity, structure, composition, and properties of TiO 2(B) materials with Raman spectroscopy.« less

A Low-Noise NbTiN Hot Electron Bolometer Mixer

NASA Technical Reports Server (NTRS)

Tong, C. Edward; Stern, Jeffrey; Megerian, Krikor; LeDuc, Henry; Sridharan, T. K.; Gibson, Hugh; Blundell, Raymond

2001-01-01

Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown onmore » metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.« less

Corrosion resistant PEM fuel cell

DOEpatents

Li, Y.; Meng, W.J.; Swathirajan, S.; Harris, S.J.; Doll, G.L.

1997-04-29

The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell`s operating environment. Stainless steels rich in Cr, Ni, and Mo are particularly effective protective interlayers. 6 figs.

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

NASA Astrophysics Data System (ADS)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

QCM gas phase detection with ceramic materials--VOCs and oil vapors.

PubMed

Latif, Usman; Rohrer, Andreas; Lieberzeit, Peter A; Dickert, Franz L

2011-06-01

Titanate sol-gel layers imprinted with carbonic acids were used as sensitive layers on quartz crystal microbalance. These functionalized ceramics enable us detection of volatile organic compounds such as ethanol, n-propanol, n-butanol, n-hexane, n-heptane, n-/iso-octane, and n-decane. Variation of the precursors (i.e., tetrabutoxy titanium, tetrapropoxy titanium, tetraethoxy titanium) allows us to tune the sensitivity of the material by a factor of 7. Sensitivity as a function of precursors leads to selective inclusion of n-butanol vapors down to 1 ppm. The selectivity of materials is optimized to differentiate between isomers, e.g., n- and iso-octane. The results can be rationalized by correlating the sensor effects of hydrocarbons with the Wiener index. A mass-sensitive sensor based on titanate layer was also developed for monitoring emanation of degraded engine oil. Heating the sensor by a meander avoids vapor condensation. Thus, a continuously working oil quality sensor was designed.

Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowińska, Małgorzata, E-mail: malgorzata.sowinska@b-tu.de; Henkel, Karsten; Schmeißer, Dieter

2016-01-15

The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film propertiesmore » can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.« less

The preparation, cytocompatibility and antimicrobial property of micro/nano structural titanium loading alginate and antimicrobial peptide

NASA Astrophysics Data System (ADS)

Liu, Zhiyuan; Zhong, Mou; Sun, Yuhua; Chen, Junhong; Feng, Bo

2018-03-01

Titanium with hybrid microporous/nanotubes (TMNT) structure on its surface was fabricated by acid etching and subsequently anodization at different voltages. Bovine lactoferricin, a kind of antimicrobial peptide, and sodium alginate (NaAlg) were loaded onto titanium surface through layer by layer assembly. The drug release, cytocompatibility and antimicrobial property against S.aureus and E.coil were studied by release experiment, osteoblast and bacterial cultures. Results indicated that samples with nanotubes of bigger diameter carried more drugs and had better biocompatibility, and drug-loaded samples acquired better biocompatibility compared with drug-free samples. Furthermore, the drug-loaded samples exhibited good initial antimicrobial property, but weak long-term antimicrobial property. Therefore, drug-loaded titanium with micro/nano structure, especially, of big diameter nanotubes, could be a promise material for medical implants, such as internal/external fixation devices.

Welding of a corrosion-resistant composite material based on VT14 titanium alloy obtained using an electron beam emitted into the atmosphere

NASA Astrophysics Data System (ADS)

Golkovski, M. G.; Samoylenko, V. V.; Polyakov, I. A.; Lenivtseva, O. G.; Chakin, I. K.; Komarov, P. N.; Ruktuev, A. A.

2017-01-01

The study investigates the possibility of inert gas arc welding of a double layer composite material on a titanium base with an anti-corrosive layer obtained by fused deposition of a powder mix containing tantalum and niobium over a titanium base using an electron beam emitted into the atmosphere. Butt welding and fillet welding options were tested with two types of edge preparation. Welds were subjected to a metallographic examination including a structural study and an analysis of the chemical and phase composition of the welds. A conclusion was made regarding the possibility of using welding for manufacturing of items from the investigated composite material.

Mixed metal oxides for dye-sensitized solar cell using zinc titanium layered double hydroxide as precursor

NASA Astrophysics Data System (ADS)

Liu, Jianqiang; Qin, Yaowei; Zhang, Liangji; Xiao, Hongdi; Song, Jianye; Liu, Dehe; Leng, Mingzhe; Hou, Wanguo; Du, Na

2013-12-01

Mixed metal oxides (MMO) are always obtained from layered double hydroxide (LDH) by thermal decomposition. In the present work, a zinc titanium LDH with the zinc titanium molar ratio of 4.25 was prepared by urea method and ZnO-based mixed oxides were obtained by calcining at or over 500°C. The MMO was used as electrodes for dye sensitized solar cell (DSSC). The cells constructed by films of prepared composite materials using a N719 as dye were prepared. The efficiency values of these cells are 0.691%, 0.572% and 0.302% with MMO prepared at 500, 600 and 700°C, respectively.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

NiFeCo/Cu superlattices with high magnetoresistive sensitivity and weak hysteresis

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Krinitsina, T. P.; Patrakov, E. I.; Proglyado, V. V.; Chernyshova, T. A.; Ustinov, V. V.

2016-10-01

The microstructure and the magetoresistive characteristics of [NiFeCo/Cu]8 superlattices prepared by magnetron sputtering with various thickness of the buffer NiFeCr layer and exhibiting a giant magnetoresistive effect have been studied. It has been found that these nanostructures are formed with a strong or weak hysteresis depending on the structure (bcc or fcc) formed in the NiFeCr buffer layer. The method of the substantial decrease in the hysteresis loop width of the magnetoresistance by using the composite Ta/NiFeCr buffer layer has been suggested.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

NASA Astrophysics Data System (ADS)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

NASA Astrophysics Data System (ADS)

Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Syed Sheraz, Ahmad; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2015-01-01

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).

Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanan, K., E-mail: saravanan@igcar.gov.in; Jayalakshmi, G.; Krishnan, R.

We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influencemore » of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.« less

Design of optimal buffer layers for CuInGaSe2 thin-film solar cells(Conference Presentation)

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo; Varley, Joel B.; He, Xiaoqing; Rockett, Angus A.; Bailey, Jeff; Zapalac, Geordie H.; Mackie, Neil; Poplavskyy, Dmitry; Bayman, Atiye

2016-09-01

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Titanium dioxide in pyroclastic layers from volcanoes in the cascade range

USGS Publications Warehouse

Czamanske, G.K.; Porter, S.C.

1965-01-01

Rapid determinations of titanium dioxide have been made by x-ray emission techniques to evaluate the potentiality of using the TiO2 content of samples for checking field correlations and assisting in identification of pyroclastic units from Cascade volcanoes. Preliminary data suggest that the two most wide-spread units have characteristic ranges of TiO2 content and that other, less extensive layers have ranges which, though characteristic, often overlap the ranges of the more widespread layers. Relative to fresh samples, weathered samples from B and C soil horizons are enriched in TiO 2.

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Induced Infiltration of Hole-Transporting Polymer into Photocatalyst for Staunch Polymer-Metal Oxide Hybrid Solar Cells.

PubMed

Park, Jong Hwan; Jung, Youngsuk; Yang, Yooseong; Shin, Hyun Suk; Kwon, Soonchul

2016-10-05

For efficient solar cells based on organic semiconductors, a good mixture of photoactive materials in the bulk heterojunction on the length scale of several tens of nanometers is an important requirement to prevent exciton recombination. Herein, we demonstrate that nanoporous titanium dioxide inverse opal structures fabricated using a self-assembled monolayer method and with enhanced infiltration of electron-donating polymers is an efficient electron-extracting layer, which enhances the photovoltaic performance. A calcination process generates an inverse opal structure of titanium dioxide (<70 nm of pore diameters) providing three-dimensional (3D) electron transport pathways. Hole-transporting polymers was successfully infiltrated into the pores of the surface-modified titanium dioxide under vacuum conditions at 200 °C. The resulting geometry expands the interfacial area between hole- and electron-transport materials, increasing the thickness of the active layer. The controlled polymer-coating process over titanium dioxide materials enhanced photocurrent of the solar cell device. Density functional theory calculations show improved interfacial adhesion between the self-assembled monolayer-modified surface and polymer molecules, supporting the experimental result of enhanced polymer infiltration into the voids. These results suggest that the 3D inverse opal structure of the surface-modified titanium dioxide can serve as a favorable electron-extracting layer in further enhancing optoelectronic performance based on organic or organic-inorganic hybrid solar cell.

Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goyal, Amit; Shin, Junsoo

A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

PubMed

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Xin, Peipei

Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

PubMed

Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

2016-02-10

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Nitriding of titanium and titanium: 8 percent aluminum, 1 percent molybdenum, 1 percent vanadium alloy with an ion-beam source

NASA Technical Reports Server (NTRS)

Gill, A.

1983-01-01

Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.

Influence of laser-target interaction regime on composition and properties of surface layers grown by laser treatment of Ti plates

NASA Astrophysics Data System (ADS)

Lavisse, L.; Berger, P.; Cirisan, M.; Jouvard, J. M.; Bourgeois, S.; de Lucas, M. C. Marco

2009-12-01

Surface laser treatment of commercially pure titanium plates was performed in air using two different Nd : YAG sources delivering pulses of 5 and 35 ns. The laser fluence conditions were set to obtain with each source either yellow or blue surface layers. Nuclear reaction analysis (NRA) was used to quantify the amount of light elements in the formed layers. Titanium oxinitrides, containing different amounts of oxygen and nitrogen, were mainly found, except in the case of long pulses and high laser fluence, which led to the growth of titanium dioxide. The structure of the layers was studied by x-ray diffraction and Raman spectroscopy. In addition, reflectance spectra showed the transition from a metal-like behaviour to an insulating TiO2-like behaviour as a function of the treatment conditions. Modelling of the laser-target interaction on the basis of the Semak model was performed to understand the different compositions and properties of the layers. Numerical calculations showed that vaporization dominates in the case of short pulses, whereas a liquid-ablation regime is achieved in the case of 35 ns long pulses.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

2014-03-07

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

Evaluation of the new TAMZ titanium alloy for dental cast application.

PubMed

Zhang, Y M; Guo, T W; Li, Z C

2000-12-01

To reveal the potential of the new titanium alloy as dental prosthodontic materials. Dental castings of TAMZ alloy were investigated in the casting machine specially designed for titanium. A mesh pattern was used to count the castability value. The mechanical properties were measured by means of a universal testing machine. Optical micrography was done on the exposed cross-section of TAMZ alloy casting. From the surface to the inner part the Knoop hardness in reacted layer of TAMZ alloy casting was measured. The structure and elemental analyses of the reacted layer were made by SEM and element line scanning observation. The castability value (Cv = 98%) and the tensile test (sigma b = 850 Mpa, sigma 0.2 = 575 Mpa, delta = 7.33%) data were collected. The castings microstructure showed main alpha phase and small beta phase. Knoop hardness in the surface reacted layer was greater than that in the inner part. From the SEM and element line scanning observation, there are three different layers in the surface reacted layer of the TAMZ alloy castings, and higher level of element of O, Al, Si and Zr were found in the reacted layer while the Si permeated deeper than others. TAMZ alloy can be accepted as a material for dental alloy in prosthodontics.

Corrosion resistance and biological activity of TiO2 implant coatings produced in oxygen-rich environments.

PubMed

Zhang, Rui; Wan, Yi; Ai, Xing; Liu, Zhanqiang; Zhang, Dong

2017-01-01

The physical and chemical properties of bio-titanium alloy implant surfaces play an important role in their corrosion resistance and biological activity. New turning and turning-rolling processes are presented, employing an oxygen-rich environment in order to obtain titanium dioxide layers that can both protect implants from corrosion and also promote cell adhesion. The surface topographies, surface roughnesses and chemical compositions of the sample surfaces were obtained using scanning electron microscopy, a white light interferometer, and the Auger electron spectroscopy, respectively. The corrosion resistance of the samples in a simulated body fluid was determined using electrochemical testing. Biological activity on the samples was also analyzed, using a vitro cell culture system. The results show that compared with titanium oxide layers formed using a turning process in air, the thickness of the titanium oxide layers formed using turning and turning-rolling processes in an oxygen-rich environment increased by 4.6 and 7.3 times, respectively. Using an oxygen-rich atmosphere in the rolling process greatly improves the corrosion resistance of the resulting samples in a simulated body fluid. On samples produced using the turning-rolling process, cells spread quickly and exhibited the best adhesion characteristics.

Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth.

PubMed

Devlin-Mullin, Aine; Todd, Naomi M; Golrokhi, Zahra; Geng, Hua; Konerding, Moritz A; Ternan, Nigel G; Hunt, John A; Potter, Richard J; Sutcliffe, Chris; Jones, Eric; Lee, Peter D; Mitchell, Christopher A

2017-06-01

Joint replacement surgery is associated with significant morbidity and mortality following infection with either methicillin-resistant Staphylococcus aureus (MRSA) or Staphylococcus epidermidis. These organisms have strong biofilm-forming capability in deep wounds and on prosthetic surfaces, with 10 3 -10 4 microbes resulting in clinically significant infections. To inhibit biofilm formation, we developed 3D titanium structures using selective laser melting and then coated them with a silver nanolayer using atomic layer deposition. On bare titanium scaffolds, S. epidermidis growth was slow but on silver-coated implants there were significant further reductions in both bacterial recovery (p < 0.0001) and biofilm formation (p < 0.001). MRSA growth was similarly slow on bare titanium scaffolds and not further affected by silver coating. Ultrastructural examination and viability assays using either human bone or endothelial cells, demonstrated strong adherence and growth on titanium-only or silver-coated implants. Histological, X-ray computed microtomographic, and ultrastructural analyses revealed that silver-coated titanium scaffolds implanted into 2.5 mm defects in rat tibia promoted robust vascularization and conspicuous bone ingrowth. We conclude that nanolayer silver of titanium implants significantly reduces pathogenic biofilm formation in vitro, facilitates vascularization and osseointegration in vivo making this a promising technique for clinical orthopedic applications. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Strained layer Fabry-Perot device

DOEpatents

Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

1994-01-01

An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.

PubMed

Park, Seoung-Hwan; Mishra, Dhaneshwar; Eugene Pak, Y; Kang, K; Park, Chang Yong; Yoo, Seung-Hyun; Cho, Yong-Hee; Shim, Mun-Bo; Kim, Sungjin

2014-06-16

Partial strain relaxation effects on polarization ratio of semipolar (112̄2) InxGa1−xN/GaN quantum well (QW) structures grown on relaxed InGaN buffers were investigated using the multiband effective-mass theory. The absolute value of the polarization ratio gradually decreases with increasing In composition in InGaN buffer layer when the strain relaxation ratio (ε0y′y′−εy′y′)/ε0y′y′ along y′-axis is assumed to be linearly proportional to the difference of lattice constants between the well and the buffer layer. Also, it changes its sign for the QW structure grown on InGaN buffer layer with a relatively larger In composition (x > 0.07). These results are in good agreement with the experiment. This can be explained by the fact that, with increasing In composition in the InGaN subsrate, the spontaneous emission rate for the y′-polarization gradually increases while that for x′-polarization decreases due to the decrease in a matrix element at the band-edge (k‖ = 0).

Buffer layers on biaxially textured metal substrates

DOEpatents

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2001-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Method to adjust multilayer film stress induced deformation of optics

DOEpatents

Mirkarimi, Paul B.; Montcalm, Claude

2000-01-01

A buffer-layer located between a substrate and a multilayer for counteracting stress in the multilayer. Depositing a buffer-layer having a stress of sufficient magnitude and opposite in sign reduces or cancels out deformation in the substrate due to the stress in the multilayer. By providing a buffer-layer between the substrate and the multilayer, a tunable, near-zero net stress results, and hence results in little or no deformation of the substrate, such as an optic for an extreme ultraviolet (EUV) lithography tool. Buffer-layers have been deposited, for example, between Mo/Si and Mo/Be multilayer films and their associated substrate reducing significantly the stress, wherein the magnitude of the stress is less than 100 MPa and respectively near-normal incidence (5.degree.) reflectance of over 60% is obtained at 13.4 nm and 11.4 nm. The present invention is applicable to crystalline and non-crystalline materials, and can be used at ambient temperatures.

Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Chenglong; Xin Yunchang; Tian Xiubo

2007-03-15

Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has threemore » layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO{sub 2} with some Mg(OH){sub 2}. The middle layer that is 50 nm thick comprises predominantly TiO{sub 2} and MgO with minor contributions from MgAl{sub 2}O{sub 4} and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti{sub 3}Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37{+-}1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased {beta}-Mg{sub 12}Al{sub 17} phase.« less

Enhancing antimicrobial activity of TiO2/Ti by torularhodin bioinspired surface modification.

PubMed

Ungureanu, Camelia; Dumitriu, Cristina; Popescu, Simona; Enculescu, Monica; Tofan, Vlad; Popescu, Marian; Pirvu, Cristian

2016-02-01

Implant-associated infections are a major cause of morbidity and mortality. This study was performed using titanium samples coated by anodization with a titanium dioxide (TiO2) shielded nanotube layer. TiO2/Ti surface was modified by simple immersion in torularhodin solution and by using a mussel-inspired method based on polydopamine as bio adhesive for torularhodin immobilization. SEM analysis revealed tubular microstructures of torularhodin and the PDA ability to function as a catchy anchor between torularhodin and TiO2 surface. Corrosion resistance was associated with TiO2 barrier oxide layer and nano-organized oxide layer and the torularhodin surface modification does not bring significant changes in resistance of the oxide layer. Our results demonstrated that the torularhodin modified TiO2/Ti surface could effectively prevent adhesion and proliferation of Escherichia coli, Staphylococcus aureus, Enterococcus faecalis, Bacillus subtilis, and Pseudomonas aeruginosa. The new modified titanium surface showed good biocompatibility and well-behaved haemocompatibility. This biomaterial with enhanced antimicrobial activity holds great potential for future biomedical applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Development of a new low cost antireflective coating technique for solar cells

NASA Technical Reports Server (NTRS)

Wohlgemuth, J. H.; Warfield, D. B.; Johnson, G. A.

1982-01-01

The goal of this study was the development of an antireflective (AR) coating technique that has the potential for high throughput and low cost yet is capable of producing films of good optical quality. Previous efforts to develop sprayed AR coatings had utilized titanium isopropoxide mixed with volatile solvents. These films worked well on smooth surfaces but when applied to etched semi-crystalline silicon surfaces yielded inconsistent results with more than 20 percent of the AM1 incident light being reflected. In this program titanium isopropoxide was sprayed directly onto heater wafers (410 C) to produce a uniform AR coating even on highly textured surfaces. Tests on various types of solar cells yielded performance improvements for the hot sprayed AR cells that are equivalent to that observed for evaporated TiOx AR coated cells. As an extension of this effort a new double layer AR consisting of a bottom layer of hot sprayed titanium isopropoxide and a top layer of hot sprayed aluminum isopropoxide in methylene chloride has resulted in more than 10 percent improvement in cell output as compared to a single layer AR cell.

Fabrication of hydroxyapatite and TiO 2 nanorods on microarc-oxidized titanium surface using hydrothermal treatment

NASA Astrophysics Data System (ADS)

Song, Ho-Jun; Kim, Ji-Woo; Kook, Min-Suk; Moon, Won-Jin; Park, Yeong-Joon

2010-09-01

AC-type microarc oxidation (MAO) and hydrothermal treatment techniques were used to enhance the bioactivity of commercially pure titanium (CP-Ti). The porous TiO 2 layer fabricated by the MAO treatment had a dominant anatase structure and contained Ca and P ions. The MAO-treated specimens were treated hydrothermally to form HAp crystallites on the titanium oxide layer in an alkaline aqueous solution (OH-solution) or phosphorous-containing alkaline solution (POH-solution). A small number of micro-sized hydroxyapatite (HAp) crystallites and a thin layer composed of nano-sized HAps were formed on the Ti-MAO-OH group treated hydrothermally in an OH-solution, whereas a large number of micro-sized HAp crystallites and dense anatase TiO 2 nanorods were formed on the Ti-MAO-POH group treated hydrothermally in a POH-solution. The layer of bone-like apatite that formed on the surface of the POH-treated sample after soaking in a modified simulated body fluid was thicker than that on the OH-treated samples.

Microstructure and high temperature oxidation resistance of Ti-Ni gradient coating on TA2 titanium alloy fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Fencheng; Mao, Yuqing; Lin, Xin; Zhou, Baosheng; Qian, Tao

2016-09-01

To improve the high temperature oxidation resistance of TA2 titanium alloy, a gradient Ni-Ti coating was laser cladded on the surface of the TA2 titanium alloy substrate, and the microstructure and oxidation behavior of the laser cladded coating were investigated experimentally. The gradient coating with a thickness of about 420-490 μm contains two different layers, e.g. a bright layer with coarse equiaxed grain and a dark layer with fine and columnar dendrites, and a transition layer with a thickness of about 10 μm exists between the substrate and the cladded coating. NiTi, NiTi2 and Ni3Ti intermetallic compounds are the main constructive phases of the laser cladded coating. The appearance of these phases enhances the microhardness, and the dense structure of the coating improves its oxidation resistance. The solidification procedure of the gradient coating is analyzed and different kinds of solidification processes occur due to the heat dissipation during the laser cladding process.

Construction of surface HA/TiO2 coating on porous titanium scaffolds and its preliminary biological evaluation.

PubMed

Chen, Hongjie; Wang, Chunli; Yang, Xiao; Xiao, Zhanwen; Zhu, Xiangdong; Zhang, Kai; Fan, Yujiang; Zhang, Xingdong

2017-01-01

A simple approach to fabricating hydroxyxapatite/titanium dioxide (HA/TiO 2 ) coating on porous titanium (Ti) scaffolds was developed in the present study. Surface TiO 2 layer was firstly formed on porous Ti scaffolds with multi-scale pores by acid-alkali (AA) treatment. The outer HA layer was then formed on the TiO 2 layer by subsequent pulse electrochemical deposition (ED) technique. All the three main process parameters, i.e. deposition times, current density and mass transfer mode affected the properties of the HA coating notably. Under the conditions of 90 deposition cycles, -10mA/cm 2 of pulse current density and stirring, a thin layer of homogeneous and nanorod-like HA sediments was formed on the substrate surface of porous Ti scaffolds. The results of protein adsorption and cellular experiments showed that compared to the single TiO 2 surface, the HA/TiO 2 surface allowed more adsorption of serum proteins and further enhanced the alkaline phosphatase (ALP) activity of MC3T3-E1 osteoblasts. Copyright © 2016 Elsevier B.V. All rights reserved.

Growth of aluminum-free porous oxide layers on titanium and its alloys Ti-6Al-4V and Ti-6Al-7Nb by micro-arc oxidation.

PubMed

Duarte, Laís T; Bolfarini, Claudemiro; Biaggio, Sonia R; Rocha-Filho, Romeu C; Nascente, Pedro A P

2014-08-01

The growth of oxides on the surfaces of pure Ti and two of its ternary alloys, Ti-6Al-4V and Ti-6Al-7Nb, by micro-arc oxidation (MAO) in a pH 5 phosphate buffer was investigated. The primary aim was to form thick, porous, and aluminum-free oxide layers, because these characteristics favor bonding between bone and metal when the latter is implanted in the human body. On Ti, Ti-6Al-4 V, and Ti-6Al-7Nb, the oxides exhibited breakdown potentials of about 200 V, 130 V, and 140 V, respectively, indicating that the oxide formed on the pure metal is the most stable. The use of the MAO procedure led to the formation of highly porous oxides, with a uniform distribution of pores; the pores varied in size, depending on the anodizing applied voltage and time. Irrespective of the material being anodized, Raman analyses allowed us to determine that the oxide films consisted mainly of the anatase phase of TiO2, and XPS results indicated that this oxide is free of Al and any other alloying element. Copyright © 2014 Elsevier B.V. All rights reserved.

Feasibility of Electrochemical Deposition of Nickel/Silicon Carbide Fibers Composites over Nickel Superalloys

NASA Astrophysics Data System (ADS)

Ambrosio, E. P.; Abdul Karim, M. R.; Pavese, M.; Biamino, S.; Badini, C.; Fino, P.

2017-05-01

Nickel superalloys are typical materials used for the hot parts of engines in aircraft and space vehicles. They are very important in this field as they offer high-temperature mechanical strength together with a good resistance to oxidation and corrosion. Due to high-temperature buckling phenomena, reinforcement of the nickel superalloy might be needed to increase stiffness. For this reason, it was thought to investigate the possibility of producing composite materials that might improve properties of the metal at high temperature. The composite material was produced by using electrochemical deposition method in which a composite with nickel matrix and long silicon carbide fibers was deposited over the nickel superalloy. The substrate was Inconel 718, and monofilament continuous silicon carbide fibers were chosen as reinforcement. Chemical compatibility was studied between Inconel 718 and the reinforcing fibers, with fibers both in an uncoated condition, and coated with carbon or carbon/titanium diboride. Both theoretical calculations and experiments were conducted, which suggested the use of a carbon coating over the fibers and a buffer layer of nickel to avoid unwanted reactions between the substrate and silicon carbide. Deposition was then performed, and this demonstrated the practical feasibility of the process. Yield strength was measured to detect the onset of interface debonding between the substrate and the composite layer.

Polarization induced doped transistor

DOEpatents

Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

2016-06-07

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Layer-based buffer aware rate adaptation design for SHVC video streaming

NASA Astrophysics Data System (ADS)

Gudumasu, Srinivas; Hamza, Ahmed; Asbun, Eduardo; He, Yong; Ye, Yan

2016-09-01

This paper proposes a layer based buffer aware rate adaptation design which is able to avoid abrupt video quality fluctuation, reduce re-buffering latency and improve bandwidth utilization when compared to a conventional simulcast based adaptive streaming system. The proposed adaptation design schedules DASH segment requests based on the estimated bandwidth, dependencies among video layers and layer buffer fullness. Scalable HEVC video coding is the latest state-of-art video coding technique that can alleviate various issues caused by simulcast based adaptive video streaming. With scalable coded video streams, the video is encoded once into a number of layers representing different qualities and/or resolutions: a base layer (BL) and one or more enhancement layers (EL), each incrementally enhancing the quality of the lower layers. Such layer based coding structure allows fine granularity rate adaptation for the video streaming applications. Two video streaming use cases are presented in this paper. The first use case is to stream HD SHVC video over a wireless network where available bandwidth varies, and the performance comparison between proposed layer-based streaming approach and conventional simulcast streaming approach is provided. The second use case is to stream 4K/UHD SHVC video over a hybrid access network that consists of a 5G millimeter wave high-speed wireless link and a conventional wired or WiFi network. The simulation results verify that the proposed layer based rate adaptation approach is able to utilize the bandwidth more efficiently. As a result, a more consistent viewing experience with higher quality video content and minimal video quality fluctuations can be presented to the user.

A Study of the Batch Annealing of Cold-Rolled HSLA Steels Containing Niobium or Titanium

NASA Astrophysics Data System (ADS)

Fang, Chao; Garcia, C. Isaac; Choi, Shi-Hoon; DeArdo, Anthony J.

2015-08-01

The batch annealing behavior of two cold-rolled, microalloyed HSLA steels has been studied in this program. One steel was microalloyed with niobium while the other with titanium. A successfully batch annealed steel will exhibit minimum variation in properties along the length of the coil, even though the inner and outer wraps experience faster heating and cooling rates and lower soaking temperatures, i.e., the so-called "cold spot" areas, than the mid-length portion of the coil, i.e., the so-called "hot spot" areas. The variation in strength and ductility is caused by differences in the extent of annealing in the different areas. It has been known for 30 years that titanium-bearing HSLA steels show more variability after batch annealing than do the niobium-bearing steels. One of the goals of this study was to try to explain this observation. In this study, the annealing kinetics of the surface and center layers of the cold-rolled sheet were compared. The surface and center layers of the niobium steel and the surface layer of the titanium steel all showed similar annealing kinetics, while the center layer of the titanium steel exhibited much slower kinetics. Metallographic results indicate that the stored energy of the cold-rolled condition, as revealed by grain center sub-grain boundary density, appeared to strongly influence the annealing kinetics. The kinetics were followed by the Kernel Average Misorientation reconstruction of the microstructure at different stages on annealing. Possible pinning effects caused by microalloy precipitates were also considered. Methods of improving uniformity and increasing kinetics, involving optimizing both hot-rolled and cold-rolled microstructure, are suggested.

Thermal coatings for titanium-aluminum alloys

NASA Technical Reports Server (NTRS)

Cunnington, George R.; Clark, Ronald K.; Robinson, John C.

1993-01-01

Titanium aluminides and titanium alloys are candidate materials for use in hot structure and heat-shield components of hypersonic vehicles because of their good strength-to-weight characteristics at elevated temperature. However, in order to utilize their maximum temperature capability, they must be coated to resist oxidation and to have a high total remittance. Also, surface catalysis for recombination of dissociated species in the aerodynamic boundary layer must be minimized. Very thin chemical vapor deposition (CVD) coatings are attractive candidates for this application because of durability and very light weight. To demonstrate this concept, coatings of boron-silicon and aluminum-boron-silicon compositions were applied to the titanium-aluminides alpha2 (Ti-14Al-21Nb), super-alpha2 (Ti-14Al-23-Nb-2V), and gamma (Ti-33Al-6Nb-1Ta) and to the titanium alloy beta-21S (Ti-15Mo-3Al-3Nb-0.2Si). Coated specimens of each alloy were subjected to a set of simulated hypersonic vehicle environmental tests to determine their properties of oxidation resistance, surface catalysis, radiative emittance, and thermal shock resistance. Surface catalysis results should be viewed as relative performance only of the several coating-alloy combinations tested under the specific environmental conditions of the LaRC Hypersonic Materials Environmental Test System (HYMETS) arc-plasma-heated hypersonic wind tunnel. Tests were also conducted to evaluate the hydrogen transport properties of the coatings and any effects of the coating processing itself on fatigue life of the base alloys. Results are presented for three types of coatings, which are as follows: (1) a single layer boron silicon coating, (2) a single layer aluminum-boron-silicon coating, and (3) a multilayer coating consisting of an aluminum-boron-silicon sublayer with a boron-silicon outer layer.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Solution-processed MoS(x) as an efficient anode buffer layer in organic solar cells.

PubMed

Li, Xiaodong; Zhang, Wenjun; Wu, Yulei; Min, Chao; Fang, Junfeng

2013-09-25

We reported a facile solution-processed method to fabricate a MoSx anode buffer layer through thermal decomposition of (NH4)2MoS4. Organic solar cells (OSCs) based on in situ growth MoSx as the anode buffer layer showed impressive improvements, and the power conversion efficiency was higher than that of conventional PEDOT:PSS-based device. The MoSx films obtained at different temperatures and the corresponding device performance were systematically studied. The results indicated that both MoS3 and MoS2 were beneficial to the device performance. MoS3 could result in higher Voc, while MoS2 could lead to higher Jsc. Our results proved that, apart from MoO3, molybdenum sulfides and Mo(4+) were also promising candidates for the anode buffer materials in OSCs.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Novel Antimicrobial Titanium Dioxide Nanotubes Obtained through a Combination of Atomic Layer Deposition and Electrospinning Technologies.

PubMed

López de Dicastillo, Carol; Patiño, Cristian; Galotto, María Jose; Palma, Juan Luis; Alburquenque, Daniela; Escrig, Juan

2018-02-24

The search for new antimicrobial substances has increased in recent years. Antimicrobial nanostructures are one of the most promising alternatives. In this work, titanium dioxide nanotubes were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers (PVN) at different temperatures with the purpose of obtaining antimicrobial nanostructures with a high specific area. Electrospinning and ALD parameters were studied in order to obtain PVN with smallest diameter and highest deposition rate, respectively. Chamber temperature was a key factor during ALD process and an appropriate titanium dioxide deposition performance was achieved at 200 °C. Subsequently, thermal and morphological analysis by SEM and TEM microscopies revealed hollow nanotubes were obtained after calcination process at 600 °C. This temperature allowed complete polymer removal and influenced the resulting anatase crystallographic structure of titanium dioxide that positively affected their antimicrobial activities. X-ray analysis confirmed the change of titanium dioxide crystallographic structure from amorphous phase of deposited PVN to anatase crystalline structure of nanotubes. These new nanostructures with very large surface areas resulted in interesting antimicrobial properties against Gram-positive and Gram-negative bacteria. Titanium dioxide nanotubes presented the highest activity against Escherichia coli with 5 log cycles reduction at 200 μg/mL concentration.

Novel Antimicrobial Titanium Dioxide Nanotubes Obtained through a Combination of Atomic Layer Deposition and Electrospinning Technologies

PubMed Central

Patiño, Cristian; Galotto, María Jose; Palma, Juan Luis; Alburquenque, Daniela

2018-01-01

The search for new antimicrobial substances has increased in recent years. Antimicrobial nanostructures are one of the most promising alternatives. In this work, titanium dioxide nanotubes were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers (PVN) at different temperatures with the purpose of obtaining antimicrobial nanostructures with a high specific area. Electrospinning and ALD parameters were studied in order to obtain PVN with smallest diameter and highest deposition rate, respectively. Chamber temperature was a key factor during ALD process and an appropriate titanium dioxide deposition performance was achieved at 200 °C. Subsequently, thermal and morphological analysis by SEM and TEM microscopies revealed hollow nanotubes were obtained after calcination process at 600 °C. This temperature allowed complete polymer removal and influenced the resulting anatase crystallographic structure of titanium dioxide that positively affected their antimicrobial activities. X-ray analysis confirmed the change of titanium dioxide crystallographic structure from amorphous phase of deposited PVN to anatase crystalline structure of nanotubes. These new nanostructures with very large surface areas resulted in interesting antimicrobial properties against Gram-positive and Gram-negative bacteria. Titanium dioxide nanotubes presented the highest activity against Escherichia coli with 5 log cycles reduction at 200 μg/mL concentration. PMID:29495318

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

NASA Astrophysics Data System (ADS)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolkhovityanov, Yu. B., E-mail: bolkhov@isp.nsc.ru; Gutakovskii, A. K.; Deryabin, A. S.

2016-11-15

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found thatmore » plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.« less

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

A novel anti-frictional multiphase layer produced by plasma nitriding of PVD titanium coated ZL205A aluminum alloy

NASA Astrophysics Data System (ADS)

Lu, C.; Yao, J. W.; Wang, Y. X.; Zhu, Y. D.; Guo, J. H.; Wang, Y.; Fu, H. Y.; Chen, Z. B.; Yan, M. F.

2018-02-01

The heat treatment (consisting of solid solution and aging), is integrated with the nitriding process of titanium coated ZL205A aluminum alloy to improve the surface and matrix mechanical properties simultaneously. Two-step duplex treatment is adopted to prepare the gradient multiphase layer on a magnesium-free ZL205A aluminum-copper based alloy. Firstly, pure titanium film is deposited on the aluminum alloy substrate using magnetron sputtering. Secondly, the Ti-coated specimen is nitrided at the solid solution temperature of the substrate alloying elements in a gas mixture of N2 and H2 and aged at 175 °C. The microstructure evolution, microhardness as well as the wear resistance of obtained multiphase layers are investigated by means of scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometer (EDS), microhardness tester and pin-on-disc tribometer. The multiphase layer, dominated by TiN0.3 or Al3Ti, is prepared with significantly increased layer depth after duplex treatment. The surface hardness of multiphase layer is remarkably improved from 23.7HV to 457HV. The core matrix hardness is also increased to 65HV after aging. The wear rate of the multiphase layer decreases about 55.22% and 49.28% in comparison with the aged and Ti coated specimens, respectively. The predominant wear mechanism for the multiphase layer is abrasive and oxidation, but severe adhesive wear for the aged and Ti coated specimens.

Research on Microstructure and Property of TiC-Co Composite Material Made by Laser Cladding

NASA Astrophysics Data System (ADS)

Zhang, Wei

The experiment of laser cladding on the surface of 2Cr13 steel was made. Titanium carbide (TiC) powder and Co-base alloy powder were used as cladding material. The microstructure and property of laser cladding layer were tested. The research showed that laser cladding layer had better properties such as minute crystals, deeper layer, higher hardness and good metallurgical bonding with base metal. The structure of cladding was supersaturated solid solution with dispersed titanium carbide. The average hardness of cladding zone was 660HV0.2. 2Cr13 steel was widely used in the field of turbine blades. Using laser cladding, the good wear layer would greatly increase the useful life of turbine blades.

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.

PubMed

Ratajczak, J; Łaszcz, A; Czerwinski, A; Katcki, J; Phillipp, F; Van Aken, P A; Reckinger, N; Dubois, E

2010-03-01

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700 degrees C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500 degrees C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700 degrees C.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

A critical study of the role of the surface oxide layer in titanium bonding

NASA Technical Reports Server (NTRS)

Dias, S.; Wightman, J. P.

1982-01-01

The molecular understanding of the role which the surface oxide layer of the adherend plays in titanium bonding is studied. The effects of Ti6-4 adherends pretreatment, bonding conditions, and thermal aging of the lap shear specimens were studied. The use of the SEM/EDAX and ESCA techniques to study surface morphology and surface composition was emphasized. In addition, contact angles and both infrared and visible reflection spectroscopy were used in ancillary studies.

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

NASA Astrophysics Data System (ADS)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Effect of titanium oxide compact layer in dye-sensitized solar cell prepared by liquid-phase deposition

NASA Astrophysics Data System (ADS)

Huang, Jung-Jie; Chiu, Shih-Ping; Wu, Menq-Jion; Hsu, Chun-Fa

2016-11-01

In this study, titanium dioxide films were deposited on indium tin oxide glass substrates by liquid-phase deposition (LPD) for application as the compact layer in dye-sensitized solar cells (DSSCs). A deposition solution of ammonium hexafluorotitanate and boric acid was used for TiO2 deposition. Compact layer passivation can improve DSSC performance by decreasing carrier losses from recombination at the ITO/electrolyte interface and improving the electrical contact between the ITO and the TiO2 photo-electrode. The optimum thickness of the compact layer was found to be 48 nm, which resulted in a 50 % increase in the conversion efficiency compared with cells without compact layers. The conversion efficiency can be increased from 3.55 to 5.26 %. Therefore, the LPD-TiO2 compact layer inhibits the dark current and increases the short-circuit current density effectively.

Sol-gel deposition of buffer layers on biaxially textured metal substances

DOEpatents

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

The Otto Aufranc Award: enhanced biocompatibility of stainless steel implants by titanium coating and microarc oxidation.

PubMed

Lim, Young Wook; Kwon, Soon Yong; Sun, Doo Hoon; Kim, Yong Sik

2011-02-01

Stainless steel is one of the most widely used biomaterials for internal fixation devices, but is not used in cementless arthroplasty implants because a stable oxide layer essential for biocompatibility cannot be formed on the surface. We applied a Ti electron beam coating, to form oxide layer on the stainless steel surface. To form a thicker oxide layer, we used a microarc oxidation process on the surface of Ti coated stainless steel. Modification of the surface using Ti electron beam coating and microarc oxidation could improve the ability of stainless steel implants to osseointegrate. The ability of cells to adhere to grit-blasted, titanium-coated, microarc-oxidated stainless steel in vitro was compared with that of two different types of surface modifications, machined and titanium-coated, and microarc-oxidated. We performed energy-dispersive x-ray spectroscopy and scanning electron microscopy investigations to assess the chemical composition and structure of the stainless steel surfaces and cell morphology. The biologic responses of an osteoblastlike cell line (SaOS-2) were examined by measuring proliferation (cell proliferation assay), differentiation (alkaline phosphatase activity), and attraction ability (cell migration assay). Cell proliferation, alkaline phosphatase activity, migration, and adhesion were increased in the grit-blasted, titanium-coated, microarc-oxidated group compared to the two other groups. Osteoblastlike cells on the grit-blasted, titanium-coated, microarc-oxidated surface were strongly adhered, and proliferated well compared to those on the other surfaces. The surface modifications we used (grit blasting, titanium coating, microarc oxidation) enhanced the biocompatibility (proliferation and migration of osteoblastlike cells) of stainless steel. This process is not unique to stainless steel; it can be applied to many metals to improve their biocompatibility, thus allowing a broad range of materials to be used for cementless implants.

Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers

NASA Astrophysics Data System (ADS)

Chen, X. Y.; Gu, Y.; Zhang, Y. G.; Ma, Y. J.; Du, B.; Zhang, J.; Ji, W. Y.; Shi, Y. H.; Zhu, Y.

2018-04-01

Improved quality of gas source molecular beam epitaxy grown In0.83Ga0.17As layer on GaAs substrate was achieved by adopting a two-step InxAl1-xAs metamorphic buffer at different temperatures. With a high-temperature In0.83Al0.17As template following a low-temperature composition continuously graded InxAl1-xAs (x = 0.05-0.86) buffer, better structural, optical and electrical properties of succeeding In0.83Ga0.17As were confirmed by atomic force microscopy, photoluminescence and Hall-effect measurements. Cross-sectional transmission electron microscopy revealed significant effect of the two-step temperature grown InAlAs buffer layers on the inhibition of threading dislocations due to the deposition of high density nuclei on GaAs substrate at the low growth temperature. The limited reduction for the dark current of GaAs-based In0.83Ga0.17As photodetectors on the two-step temperature grown InxAl1-xAs buffer layers was ascribed to the contribution of impurities caused by the low growth temperature of InAlAs buffers.

Model for threading dislocations in metamorphic tandem solar cells on GaAs (001) substrates

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-02-01

We present an approximate model for the threading dislocations in III-V heterostructures and have applied this model to study the defect behavior in metamorphic triple-junction solar cells. This model represents a new approach in which the coefficient for second-order threading dislocation annihilation and coalescence reactions is considered to be determined by the length of misfit dislocations, LMD, in the structure, and we therefore refer to it as the LMD model. On the basis of this model we have compared the average threading dislocation densities in the active layers of triple junction solar cells using linearly-graded buffers of varying thicknesses as well as S-graded (complementary error function) buffers with varying thicknesses and standard deviation parameters. We have shown that the threading dislocation densities in the active regions of metamorphic tandem solar cells depend not only on the thicknesses of the buffer layers but on their compositional grading profiles. The use of S-graded buffer layers instead of linear buffers resulted in lower threading dislocation densities. Moreover, the threading dislocation densities depended strongly on the standard deviation parameters used in the S-graded buffers, with smaller values providing lower threading dislocation densities.

Could titanium oxide coating from a sol-gel process make stone baskets more resistant to laser radiation at 2.1 μm?

PubMed

Cordes, Jens; Nguyen, Felix; Heidenau, Frank; Jocham, Dieter

2012-10-19

Stone baskets could be easily destroyed by Holmium:YAG-laser at an endourologic treatment, with respect to this, we try to improve the resistance by coating them with a titanium oxide layer. The layer was established by a sol-gel-process. Six new baskets (Equadus, Opi Med, Ettlingen, Germany) were used: 1.8 Ch. with 4 wires (diameter 0.127 mm). Three baskets were coated with a layer of titanium oxide established by a sol-gel process at the BioCerEntwicklungs GmbH in Bayreuth (~100 nanometres thickness). The lithotripter was a Holmium:YAG laser (Auriga XL, Starmedtec, Starnberg, Germany). 10 uncoated and 10 coated wires were tested with 610 mJ (the minimal clinical setting) and 2 uncoated and 2 coated wires were tested with 110 mJ. The wires were locked in a special holding instrument under water and the laser incident angle was 90°. The endpoint was gross visible damage to the wire and loss of electric conduction. Only two coated wires resisted two pulses (one in the 610 mJ and one in the 110 mJ setting). All other wires were destroyed after one pulse. This was the first attempt at making stone baskets more resistant to a Holmium:YAG laser beam. Titanium oxide deposited by a sol-gel-process on a titanium-nickel alloy did not result in better resistance to laser injuries.

Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

2016-03-01

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun

2015-10-05

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness,more » which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.« less

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

PubMed Central

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-01-01

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

Propagation of misfit dislocations from buffer/Si interface into Si

DOEpatents

Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

2011-08-30

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Use of titanium mesh for reconstruction of large anterior cranial base defects.

PubMed

Badie, B; Preston, J K; Hartig, G K

2000-10-01

The authors evaluated the role of titanium mesh used in combination with vascularized pericranium to provide rigid support during reconstruction of anterior skull base defects. Thirteen patients with large anterior skull base defects caused by tumor invasion or traumatic injury involving the cribriform plate, orbital roof, and planum sphenoidale were included in the study. The reconstruction technique involved placement of titanium mesh between two layers of continuous vascularized pericranium. Surgical glue and routine lumbar cerebrospinal fluid (CSF) drainage were not used in any patient. At a mean postoperative follow-up time of 22 months (range 8-39 months), none of the patients had developed infection or meningocele. Postoperative CSF rhinorrhea occurred in two patients with extensive dural defects, which resolved with temporary lumbar drainage. Use of titanium mesh and a two-layer vascularized pericranial graft is a safe, reproducible, and feasible method for reconstructing the anterior skull base. Patients with large dural defects may need temporary CSF diversion to avoid postoperative fistula formation.

Mechanical properties and microstructural evolution of vacuum hot-pressed titanium and Ti-6Al-7Nb alloy.

PubMed

Bolzoni, L; Ruiz-Navas, E M; Neubauer, E; Gordo, E

2012-05-01

Hot-pressing is a powder metallurgy process where loose powder is loaded into a mould, usually of graphite, and sintered by the simultaneous application of high temperature and pressure. In this study elemental titanium and Ti-6Al-7Nb alloy powders are hot-pressed under different conditions in order to study the influence of the processing parameters on the microstructure and mechanical properties. The samples are characterised in terms of relative density, microstructure, XRD, percentage of interstitials, three-point bending test and hardness. Relative densities as high as 99% are obtained, the oxygen and carbon content remains almost constant but nitrogen percentage increases. This is due to the interaction with the BN coated mould and leads to the formation of a reacted layer in the surface, composed by different titanium compounds, which greatly affect the mechanical properties. Nevertheless, the removal of this reacted layer leads to an important improvement of the ductility, especially for elemental titanium. Copyright © 2012 Elsevier Ltd. All rights reserved.

Metal-Intermetallic Laminate Ti-Al3Ti Composites Produced by Spark Plasma Sintering of Titanium and Aluminum Foils Enclosed in Titanium Shells

NASA Astrophysics Data System (ADS)

Lazurenko, Daria V.; Mali, Vyacheslav I.; Bataev, Ivan A.; Thoemmes, Alexander; Bataev, Anatoly A.; Popelukh, Albert I.; Anisimov, Alexander G.; Belousova, Natalia S.

2015-09-01

Metal-intermetallic laminate composites are considered as promising materials for application in the aerospace industry. In this study, Ti-Al3Ti composites enclosed in titanium cases were produced by reactive spark plasma sintering. Sintering was carried out at 1103 K and 1323 K (830 °C and 1050 °C) for 10 minutes. In both cases, high-quality Ti-Al3Ti composites containing thin transition layers at the interfaces were obtained. Al2Ti, AlTi, and AlTi3 intermetallic phases and a solid solution of aluminum in titanium were observed in the transition layers by scanning and transmission electron microscopy. The material sintered at 1323 K (1050 °C) had higher strength in comparison with the composite obtained at 1103 K (830 °C). However, the hardness of the intermetallic component in the sample sintered at higher temperature decreased due to the grain growth. The impact toughness values of both materials were approximately identical.

Titanium Surface Priming with Phase-Transited Lysozyme to Establish a Silver Nanoparticle-Loaded Chitosan/Hyaluronic Acid Antibacterial Multilayer via Layer-by-Layer Self-Assembly.

PubMed

Zhong, Xue; Song, Yunjia; Yang, Peng; Wang, Yao; Jiang, Shaoyun; Zhang, Xu; Li, Changyi

2016-01-01

The formation of biofilm around implants, which is induced by immediate bacterial colonization after installation, is the primary cause of post-operation infection. Initial surface modification is usually required to incorporate antibacterial agents on titanium (Ti) surfaces to inhibit biofilm formation. However, simple and effective priming methods are still lacking for the development of an initial functional layer as a base for subsequent coatings on titanium surfaces. The purpose of our work was to establish a novel initial layer on Ti surfaces using phase-transited lysozyme (PTL), on which multilayer coatings can incorporate silver nanoparticles (AgNP) using chitosan (CS) and hyaluronic acid (HA) via a layer-by-layer (LbL) self-assembly technique. In this study, the surfaces of Ti substrates were primed by dipping into a mixture of lysozyme and tris(2-carboxyethyl)phosphine (TCEP) to obtain PTL-functionalized Ti substrates. The subsequent alternating coatings of HA and chitosan loaded with AgNP onto the precursor layer of PTL were carried out via LbL self-assembly to construct multilayer coatings on Ti substrates. The results of SEM and XPS indicated that the necklace-like PTL and self-assembled multilayer were successfully immobilized on the Ti substrates. The multilayer coatings loaded with AgNP can kill planktonic and adherent bacteria to 100% during the first 4 days. The antibacterial efficacy of the samples against planktonic and adherent bacteria achieved 65%-90% after 14 days. The sustained release of Ag over 14 days can prevent bacterial invasion until mucosa healing. Although the AgNP-containing structure showed some cytotoxicity, the toxicity can be reduced by controlling the Ag release rate and concentration. The PTL priming method provides a promising strategy for fabricating long-term antibacterial multilayer coatings on titanium surfaces via the LbL self-assembly technique, which is effective in preventing implant-associated infections in the early stage.

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Effects of sandblasting and silica-coating procedures on pure titanium.

PubMed

Kern, M; Thompson, V P

1994-10-01

Silica coating titanium improves chemomechanical bonding. Sandblasting is recommended as a pretreatment to thermal silica coating (Silicoater MD) or as part of a tribochemical silica coating process (Rocatec). This study evaluated the effects of sandblasting and coating techniques on volume loss, surface morphology and composition changes in pure titanium. Volume loss of titanium was similar to values reported for base alloys and does not seem to be critical for the clinical fit of restorations. Embedded alumina particles were found in the titanium after sandblasting and the alumina content increased to a range of 27.5-39.3 wt% as measured by EDS. Following tribochemical silica coating, a layer of small silica particles remained on the surface, increasing the silica content to a range of 17.9-19.5 wt%. Ultrasonic cleaning removed loose alumina or silica particles from the surface, resulting in only slight decreases in alumina or silica contents, suggesting firm attachment of most of the alumina and silica to the titanium surface. Silica content following thermal silica coating treatment increased only slightly from the sandblasted specimen to 1.4 wt%. The silica layer employed by these silica coating methods differs widely in both morphology and thickness. These results provide a basis for explanation of adhesive failure modes in bond strength tests and for developing methods to optimize resin bonding. Clinically, ultrasonic cleaning of sandblasted and tribochemically silica coated titanium should improve resin bonding as loose surface particles are removed without relevant changes in composition.

SnS2 films deposited from molecular ink as Cd-free alternative buffer layer for solar cells

NASA Astrophysics Data System (ADS)

Jariwala, Akshay; Chaudhuri, Tapas K.; Toshniwal, Aditi; Patel, Sanjay; Kheraj, Vipul; Ray, Abhijit

2018-05-01

This work investigates the potential of SnS2 as a Cd-free alternative buffer layer for CIGS solar cells. The suitability of SnS2 film as a buffer layer has been evaluated by numerical analysis using SCAPS software. A new simple method for preparation of SnS2 films by dip-coating from molecular ink is reported. The formation of SnS2 is confirmed by Raman spectroscopy. The films are smooth and shiny with roughness of 2-3 nm. The films are n-type with band gap of 2.6 eV and electrical conductivity of 10-3 S/cm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ok, Kyung-Chul; Park, Jin-Seong, E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and themore » devices remained normally functional.« less

Effect of buffer layer on photoresponse of MoS2 phototransistor

NASA Astrophysics Data System (ADS)

Miyamoto, Yuga; Yoshikawa, Daiki; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji

2018-06-01

An atomically thin MoS2 field-effect transistor (FET) is expected as an ultrathin photosensor with high sensitivity. However, a persistent photoconductivity phenomenon prevents high-speed photoresponse. Here, we investigate the photoresponse of a MoS2 FET with a thin Al2O3 buffer layer on a SiO2 gate insulator. The application of a 2-nm-thick Al2O3 buffer layer greatly improves not only the steady state properties but also the response speed from 1700 to 0.2 s. These experimental results are well explained by the random localized potential fluctuation model combined with the model based on the recombination of the bounded electrons around the trapped hole.

Surface characteristics, corrosion and bioactivity of chemically treated biomedical grade NiTi alloy.

PubMed

Chembath, Manju; Balaraju, J N; Sujata, M

2015-11-01

The surface of NiTi alloy was chemically modified using acidified ferric chloride solution and the characteristics of the alloy surface were studied from the view point of application as a bioimplant. Chemically treated NiTi was also subjected to post treatments by annealing at 400°C and passivation in nitric acid. The surface of NiTi alloy after chemical treatment developed a nanogrid structure with a combination of one dimensional channel and two dimensional network-like patterns. From SEM studies, it was found that the undulations formed after chemical treatment remained unaffected after annealing, while after passivation process the undulated surface was filled with oxides of titanium. XPS analysis revealed that the surface of passivated sample was enriched with oxides of titanium, predominantly TiO2. The influence of post treatment on the corrosion resistance of chemically treated NiTi alloy was monitored using Potentiodynamic Polarization and Electrochemical Impedance Spectroscopy (EIS) in Phosphate Buffered Saline (PBS) solution. In the chemically treated condition, NiTi alloy exhibited poor corrosion resistance due to the instability of the surface. On the other hand, the breakdown potential (0.8V) obtained was highest for the passivated samples compared to other surface treated samples. During anodic polarization, chemically treated samples displayed dissolution phenomenon which was predominantly activation controlled. But after annealing and passivation processes, the behavior of anodic polarization was typical of a diffusion controlled process which confirmed the enhanced passivity of the post treated surfaces. The total resistance, including the porous and barrier layer, was in the range of mega ohms for passivated surfaces, which could be attributed to the decrease in surface nickel content and formation of compact titanium oxide. The passivated sample displayed good bioactivity in terms of hydroxyapatite growth, noticed after 14days immersion in Hanks' solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

Buffer-regulated biocorrosion of pure magnesium.

PubMed

Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

2012-02-01

Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

Method for improving performance of high temperature superconductors within a magnetic field

DOEpatents

Wang, Haiyan; Foltyn, Stephen R.; Maiorov, Boris A.; Civale, Leonardo

2010-01-05

The present invention provides articles including a base substrate including a layer of an oriented cubic oxide material having a rock-salt-like structure layer thereon; and, a buffer layer upon the oriented cubic oxide material having a rock-salt-like structure layer, the buffer layer having an outwardly facing surface with a surface morphology including particulate outgrowths of from 10 nm to 500 run in size at the surface, such particulate outgrowths serving as flux pinning centers whereby the article maintains higher performance within magnetic fields than similar articles without the necessary density of such outgrowths.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

NASA Astrophysics Data System (ADS)

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

PubMed Central

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-01-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices. PMID:26899567

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus.

PubMed

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-22

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Portable heatable container

NASA Technical Reports Server (NTRS)

Yang, L. C. (Inventor)

1980-01-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Portable heatable container

NASA Astrophysics Data System (ADS)

Yang, L. C.

1980-03-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

The influence of surface roughness and high pressure torsion on the growth of anodic titania nanotubes on pure titanium

NASA Astrophysics Data System (ADS)

Hu, Nan; Gao, Nong; Starink, Marco J.

2016-11-01

Anodic titanium dioxide nanotube (TNT) arrays have wide applications in photocatalytic, catalysis, electronics, solar cells and biomedical implants. When TNT coatings are combined with severe plastic deformation (SPD), metal processing techniques which efficiently improve the strength of metals, a new generation of biomedical implant is made possible with both improved bulk and surface properties. This work investigated the effect of processing by high pressure torsion (HPT) and different mechanical preparations on the substrate and subsequently on the morphology of TNT layers. HPT processing was applied to refine the grain size of commercially pure titanium samples and substantially improved their strength and hardness. Subsequent anodization at 30 V in 0.25 wt.% NH4F for 2 h to form TNT layers on sample surfaces prepared with different mechanical preparation methods was carried out. It appeared that the local roughness of the titanium surface on a microscopic level affected the TNT morphology more than the macroscopic surface roughness. For HPT-processed sample, the substrate has to be pre-treated by a mechanical preparation finer than 4000 grit for HPT to have a significant influence on TNTs. During the formation of TNT layers the oxide dissolution rate was increased for the ultrafine-grained microstructure formed due to HPT processing.

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

NASA Astrophysics Data System (ADS)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, A.J.; Fritz, I.J.; Drummond, T.J.

1993-11-01

Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMSmore » roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.« less

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

NASA Astrophysics Data System (ADS)

Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

2017-10-01

Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

Cathodic protection of two concrete bridge decks using titanium-mesh anodes : interim report.

DOT National Transportation Integrated Search

1991-01-01

Expanded titanium mesh with a layer of precious metal oxides sintered around it has recently been introduced to fulfill the need for a durable anode in the cathodic protection (CP) of concrete bridge decks. In addition to being resistant to chemical ...

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Great enhancement of pyroelectric properties for Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films on Pt-Si substrates by inserting a self-buffered layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, C. G.; Li, Y. R.; Zhu, J.

2009-02-15

(100)-Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} (BST) films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16x10{sup 4} {mu}C m{sup -2} K{sup -1} and 2.18x10{sup -4} Pa{sup -1/2}, respectively. The detectivity of 9.4x10{sup 7}more » cm Hz{sup 1/2} W{sup -1} was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO{sub 2} films.« less

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

High performance polymer solar cells with as-prepared zirconium acetylacetonate film as cathode buffer layer

PubMed Central

Tan, Zhan'ao; Li, Shusheng; Wang, Fuzhi; Qian, Deping; Lin, Jun; Hou, Jianhui; Li, Yongfang

2014-01-01

Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode buffer layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode buffer layer for fabricating large area flexible PSCs. PMID:24732976

Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Jagrati, E-mail: jdwivedi.phy@gmail.com; Mishra, Ashutosh; Gupta, Ranjeeta

2016-05-23

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metalmore » is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.« less

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

NASA Astrophysics Data System (ADS)

Faruque, Faisal

The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

Inorganic-organic hybrid coatings on stainless steel by layer-by-layer deposition and surface-initiated atom-transfer-radical polymerization for combating biocorrosion.

PubMed

Yuan, S J; Pehkonen, S O; Ting, Y P; Neoh, K G; Kang, E T

2009-03-01

To improve the biocorrosion resistance of stainless steel (SS) and to confer the bactericidal function on its surface for inhibiting bacterial adhesion and biofilm formation, well-defined inorganic-organic hybrid coatings, consisting of the inner compact titanium oxide multilayers and outer dense poly(vinyl-N-hexylpyridinium) brushes, were successfully developed. Nanostructured titanium oxide multilayer coatings were first built up on the SS substrates via the layer-by-layer sol-gel deposition process. The trichlorosilane coupling agent, containing the alkyl halide atom-transfer-radical polymerization (ATRP) initiator, was subsequently immobilized on the titanium oxide coatings for surface-initiated ATRP of 4-vinylpyridine (4VP). The pyridium nitrogen moieties of the covalently immobilized 4VP polymer, or P(4VP), brushes were quaternized with hexyl bromide to produce a high concentration of quaternary ammonium salt on the SS surfaces. The excellent antibacterial efficiency of the grafted polycations, poly(vinyl-N-pyridinium bromide), was revealed by viable cell counts and atomic force microscopy images of the surface. The effectiveness of the hybrid coatings in corrosion protection was verified by the Tafel plot and electrochemical impedance spectroscopy measurements.

Anodization: a promising nano-modification technique of titanium implants for orthopedic applications.

PubMed

Yao, Chang; Webster, Thomas J

2006-01-01

Anodization is a well-established surface modification technique that produces protective oxide layers on valve metals such as titanium. Many studies have used anodization to produce micro-porous titanium oxide films on implant surfaces for orthopedic applications. An additional hydrothermal treatment has also been used in conjunction with anodization to deposit hydroxyapatite on titanium surfaces; this is in contrast to using traditional plasma spray deposition techniques. Recently, the ability to create nanometer surface structures (e.g., nano-tubular) via anodization of titanium implants in fluorine solutions have intrigued investigators to fabricate nano-scale surface features that mimic the natural bone environment. This paper will present an overview of anodization techniques used to produce micro-porous titanium oxide structures and nano-tubular oxide structures, subsequent properties of these anodized titanium surfaces, and ultimately their in vitro as well as in vivo biological responses pertinent for orthopedic applications. Lastly, this review will emphasize why anodized titanium structures that have nanometer surface features enhance bone forming cell functions.

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Structure and properties of parts produced by electron-beam additive manufacturing

NASA Astrophysics Data System (ADS)

Klimenov, Vasilii; Klopotov, Anatolii; Fedorov, Vasilii; Abzaev, Yurii; Batranin, Andrey; Kurgan, Kirill; Kairalapov, Daniyar

2017-12-01

The paper deals with the study of structure, microstructure, composition and microhardness of a tube processed by electron-beam additive manufacturing using optical and scanning electron microscopy. The structure and macrodefects of a tube made of Grade2 titanium alloy is studied using the X-ray computed tomography. The principles of layer-by-layer assembly and boundaries after powder sintering are set out in this paper. It is found that the titanium alloy has two phases. Future work will involve methods to improve properties of created parts.

Series interconnected photovoltaic cells and method for making same

DOEpatents

Albright, S.P.; Chamberlin, R.R.; Thompson, R.A.

1995-01-31

A novel photovoltaic module and method for constructing the same are disclosed. The module includes a plurality of photovoltaic cells formed on a substrate and laterally separated by interconnection regions. Each cell includes a bottom electrode, a photoactive layer and a top electrode layer. Adjacent cells are connected in electrical series by way of a conductive-buffer line. The buffer line is also useful in protecting the bottom electrode against severing during downstream layer cutting processes. 11 figs.

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2016-03-15

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for themore » 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.« less

Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

PubMed

Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

2016-07-20

We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

Influence of Electropolishing and Magnetoelectropolishing on Corrosion and Biocompatibility of Titanium Implants

NASA Astrophysics Data System (ADS)

Rahman, Zia ur; Pompa, Luis; Haider, Waseem

2014-11-01

Titanium alloys are playing a vital role in the field of biomaterials due to their excellent corrosion resistance and biocompatibility. These alloys enhance the quality and longevity of human life by replacing or treating various parts of the body. However, as these materials are in constant contact with the aggressive body fluids, corrosion of these alloys leads to metal ions release. These ions leach to the adjacent tissues and result in adverse biological reactions and mechanical failure of implant. Surface modifications are used to improve corrosion resistance and biological activity without changing their bulk properties. In this investigation, electropolishing and magnetoelectropolishing were carried out on commercially pure titanium, Ti6Al4V, and Ti6Al4V-ELI. These surface modifications are known to effect surface charge, chemistry, morphology; wettability, corrosion resistance, and biocompatibility of these materials. In vitro cyclic potentiodynamic polarization tests were conducted in phosphate buffer saline in compliance with ASTM standard F-2129-12. The surface morphology, roughness, and wettability of these alloys were studied using scanning electron microscope, atomic force microscope, and contact angle meter, respectively. Moreover, biocompatibility of titanium alloys was assessed by growing MC3T3 pre-osteoblast cells on them.

Characterization and antibacterial performance of electrodeposited chitosan-vancomycin composite coatings for prevention of implant-associated infections.

PubMed

Ordikhani, F; Tamjid, E; Simchi, A

2014-08-01

Orthopaedic implant-associated infections are one of the most serious complications in orthopaedic surgery and a major cause of implant failure. In the present work, drug-eluting coatings based on chitosan containing various amounts of vancomycin were prepared by a cathodic electrophoretic deposition process on titanium foils. A three-step release mechanism of the antibiotic from the films in a phosphate-buffered saline solution was noticed. At the early stage, physical encapsulation of the drug in the hydrogel network controlled the release rate. At the late stage, however, in vitro degradation/deattachment of chitosan was responsible for the controlled release. Cytotoxicity evaluation of the drug-eluting coatings via culturing in human osteosarcoma cells (MG-63 osteoblast-like cell line) showed no adverse effect on the biocompatibility. Antibacterial tests against Gram-positive Staphylococcus aureus also demonstrated that the infection risk of titanium foils was significantly reduced due to the antibiotic release. Additionally, in vitro electrochemical corrosion studies by polarization technique revealed that the corrosion current density was significantly lower for the titanium foils with drug-eluting coatings compared to that of uncoated titanium. Copyright © 2014 Elsevier B.V. All rights reserved.

Nitriding of titanium by NH{sub 3} RF plasma: a study of the corrosion resistance and the mechanical properties of the protective films formed at the solid surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellakhal, N

2002-12-01

The exposure of a titanium sample to an NH{sub 3} low pressure plasma leads to the formation of a nitriding layer. The products formed at the titanium surface were identified by XRD spectroscopy. The modification of the corrosion resistance characteristics of titanium due to the NH{sub 3} plasma treatment were investigated by electrochemical tests. The recorded polarization curves of the treated titanium samples were used to determine the values of the corrosion potential E{sub corr}. This study confirms the increasing of the corrosion resistance as a function of the time exposure and the injected electric power in the silica reactor.more » The plasma treatment also induces drastic changes of the titanium target in hardness.« less

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Oxygen diffusion barrier coating

NASA Technical Reports Server (NTRS)

Unnam, Jalaiah (Inventor); Clark, Ronald K. (Inventor)

1987-01-01

A method for coating a titanium panel or foil with aluminum and amorphous silicon to provide an oxygen barrier abrogating oxidation of the substrate metal is developed. The process is accomplished with known inexpensive procedures common in materials research laboratories, i.e., electron beam deposition and sputtering. The procedures are conductive to treating foil gage titanium and result in submicron layers which virtually add no weight to the titanium. There are no costly heating steps. The coatings blend with the substrate titanium until separate mechanical properties are subsumed by those of the substrate without cracking or spallation. This method appreciably increases the ability of titanium to mechanically perform in high thermal environments such as those witnessed on structures of space vehicles during re-entry

Modified secondary lithium metal batteries with the polyaniline-carbon nanotube composite buffer layer.

PubMed

Zhang, Ding; Yin, Yanli; Liu, Changhong; Fan, Shoushan

2015-01-07

A modified secondary lithium metal battery inserted with a polyaniline-carbon nanotube nanoporous composite buffer layer was fabricated. This unique and simple design of battery has the great potential to decrease the safety risk of the secondary Li metal battery in cycles of recharging processes and improve its cycle life in the future.

FIBER AND INTEGRATED OPTICS: Emission properties of graded-index corrugated waveguides with a metal or semiconductor coating

NASA Astrophysics Data System (ADS)

Ataya, B. A.; Osovitskiĭ, A. N.

1992-02-01

A numerical method was used to investigate the emission of TE-polarized light from a graded-index corrugated waveguide coated with a metal or semiconductor and either with or without a buffer layer. The main emission characteristics of these systems were analyzed. In the case of metallized dielectric structures an optimal corrugation depth was established for which the emitted power is a maximum. It was found that when the parameters of a structure with a buffer layer were correctly chosen and a highly reflective metal coating was used, practically all the power in the waveguide wave could be emitted along a specified direction. A structure with a buffer layer and an aluminum coating was investigated experimentally.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

PubMed

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

PubMed Central

Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

2016-01-01

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates. PMID:27869222

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Formation mechanism of the protective layer in a blast furnace hearth

NASA Astrophysics Data System (ADS)

Jiao, Ke-xin; Zhang, Jian-liang; Liu, Zheng-jian; Xu, Meng; Liu, Feng

2015-10-01

A variety of techniques, such as chemical analysis, scanning electron microscopy-energy dispersive spectroscopy, and X-ray diffraction, were applied to characterize the adhesion protective layer formed below the blast furnace taphole level when a certain amount of titanium- bearing burden was used. Samples of the protective layer were extracted to identify the chemical composition, phase assemblage, and distribution. Furthermore, the formation mechanism of the protective layer was determined after clarifying the source of each component. Finally, a technical strategy was proposed for achieving a stable protective layer in the hearth. The results show that the protective layer mainly exists in a bilayer form in the sidewall, namely, a titanium-bearing layer and a graphite layer. Both the layers contain the slag phase whose major crystalline phase is magnesium melilite (Ca2MgSi2O7) and the main source of the slag phase is coke ash. It is clearly determined that solid particles such as graphite, Ti(C,N) and MgAl2O4 play an important role in the formation of the protective layer, and the key factor for promoting the formation of a stable protective layer is reasonable control of the evolution behavior of coke.

Reduction of shunt current in buffer-free IrMn based spin-valve structures

NASA Astrophysics Data System (ADS)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Microstructure and antibacterial property of in situ TiO(2) nanotube layers/titanium biocomposites.

PubMed

Cui, C X; Gao, X; Qi, Y M; Liu, S J; Sun, J B

2012-04-01

The TiO(2) nanotube layer was in situ synthesized on the surface of pure titanium by the electrochemical anodic oxidation. The diameter of nano- TiO(2) nanotubes was about 70~100 nm. The surface morphology and phase compositions of TiO(2) nanotube layers were observed and analyzed using the scanning electron microscope (SEM). The important processing parameters, including anodizing voltage, reaction time, concentration of electrolyte, were optimized in more detail. The photocatalytic activity of the nano- TiO(2) nanotube layers prepared with optimal conditions was evaluated via the photodegradation of methylthionine in aqueous solution. The antibacterial property of TiO(2) nanotube layers prepared with optimal conditions was evaluated by inoculating Streptococcus mutans on the TiO(2) nanotube layers in vitro. The results showed that TiO(2) nanotube layers/Ti biocomposites had very good antibacterial activity to resist Streptococcus mutans. As a dental implant biomaterial, in situ TiO(2) nanotube layer/Ti biocomposite has better and wider application prospects. Copyright © 2012 Elsevier Ltd. All rights reserved.

Deployment of titanium thermal barrier for low-temperature carbon nanotube growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, G.Y.; Poa, C.H.P.; Henley, S.J.

2005-12-19

Chemical vapor-synthesized carbon nanotubes are typically grown at temperatures around 600 deg. C. We report on the deployment of a titanium layer to help elevate the constraints on the substrate temperature during plasma-assisted growth. The growth is possible through the lowering of the hydrocarbon content used in the deposition, with the only source of heat provided by the plasma. The nanotubes synthesized have a small diameter distribution, which deviates from the usual trend that the diameter is determined by the thickness of the catalyst film. Simple thermodynamic simulations also show that the quantity of heat, that can be distributed, ismore » determined by the thickness of the titanium layer. Despite the lower synthesis temperature, it is shown that this technique allows for high growth rates as well as better quality nanotubes.« less

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

NASA Astrophysics Data System (ADS)

Jang, Il-Yong; John, Arun; Goodwin, Frank; Lee, Su-Young; Kim, Byung-Gook; Kim, Seong-Sue; Jeon, Chan-Uk; Kim, Jae Hyung; Jang, Yong Hoon

2014-07-01

Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

Processing Method for Creating Ultra-Thin Lead Zirconate Titanate (PZT) Films Via Chemical Solution Deposition

DTIC Science & Technology

2008-12-01

n-propoxide and titanium isopropoxide , were measured with a graduated auto pipet and combined with 45 mL of 2-MOE in a 125 mL flask. The solution...nitrogen (N2). This anneal procedure was used to remove trapped hydrogen from the thin film. Following the anneal, a bi-layer of titanium (Ti) and...dioxide Ti titanium 10 NO. OF COPIES ORGANIZATION 1 ADMNSTR ELEC DEFNS TECHL INFO CTR ATTN DTIC OCP 8725 JOHN J KINGMAN RD STE

An X-ray monitor for measurement of a titanium tritide target thickness

NASA Technical Reports Server (NTRS)

Alger, D. L.; Steinberg, R.

1972-01-01

An X-ray device capable of measuring titanium tritide film thickness from 0.1 to 30 micrometers has been built and tested. The monitor was designed for use in a rotating target system which used thick targets and incorporated a sputtering electrode to remove depleted layers from the target surface. The thickness measurement can be done in the presence of an intense background of bremsstrahlung and characteristic titanium X-radiation. A measurement can be accomplished in situ in two hours with reasonable accuracy.

Influence of ultrasonic sound on physico-mechanical characteristics of titanium alloys

NASA Astrophysics Data System (ADS)

Akushskaya, O. M.; Papsheva, N. D.

2018-03-01

The paper presents data on the influence of ultrasonic vibrations on the main physico-mechanical characteristics in the hardening of titanium alloys. Hardening was carried out during rolling and using free balls in a special working chamber with the imposition of ultrasonic vibrations. The studies have shown that ultrasonic hardening of titanium alloys promotes crushing blocks of mosaic and the formation of a fine-grain structure with a high density of dislocations, changes the phase composition of the surface layer and causes the formation of compressive residual stresses. At the same time, technological heredity is practically not manifested. The endurance range of titanium alloys increases.

Titanium Corrosion: Implications For Dental Implants.

PubMed

Shah, Rucha; Penmetsa, Deepika Shree Lakshmi; Thomas, Raison; Mehta, Dhoom Singh

2016-12-01

Titanium has been considered as one of the most biocompatible metals. Studies testing its corrosion resistance have proposed that the titanium oxide layer formed on the metal surface is lost under certain unavoidable conditions to which it is exposed in the oral environment. This questions its property of corrosion resistance in the oral cavity. Hence, there is a need to understand the mechanisms of corrosion, which can help in the long-term stability and function of implants. Here, we review the possible pathways of corrosion of titanium in the oral cavity, its implications and proposed methods of prevention of corrosion. Copyright© 2016 Dennis Barber Ltd.

Mineral chemistry indicates the petrogenesis of rhyolite from the southwestern Okinawa Trough

NASA Astrophysics Data System (ADS)

Chen, Zuxing; Zeng, Zhigang; Wang, Xiaoyuan; Zhang, Yuxiang; Yin, Xuebo; Chen, Shuai; Ma, Yao; Li, Xiaohui; Qi, Hanyan

2017-12-01

To reveal the petrogenesis of rhyolite from the southwestern Okinawa Trough, the mineral chemistry of plagioclase, orthopyroxene, amphibole, quartz and Fe-Ti oxide phenocrysts were analyzed using an electron microprobe, and in suit Sr and Ba contents of plagioclase analysed by LA-ICPMS were chosen for fingerprinting plagioclases of different provenances. Results indicate an overall homogeneous composition for each of the mineral phases except for plagioclase phenocrysts which have a wide range of composition (An=39 88). Plagioclase crystals characterized by An contents of >70 are not in equilibrium with their whole-rock compositions, and coarse-sieved plagioclase phenocryst interiors record high An contents (>70) and Sr/Ba ratios (>7), which are similar to the those of plagioclase crystals in basalt. Therefore, these crystals must have been introduced to the rhyolitic magma from a more mafic source. Equilibrium temperatures estimated using orthopyroxene-liquid, iron-titanium oxide, titanium-in-quartz and amphibole geothermometers show consistent values ranging from 792 to 869°C. The equilibrium pressure calculated using amphibole compositions is close to 121 MPa which corresponds to an approximate depth of 4 km. The fO2 conditions estimated from Fe-Ti oxides and amphiboles plot slightly above the NNO buffer, which indicates that the rock formed under more oxidized conditions. Our results suggests that petrogenesis of the rhyolite due to basaltic magma ascend with the high An and Sr/Ba plaigoclases from deep magma chamber into the shallow chamber where the fractional crystallization and crustal assimilation happened. It also indicates that a two-layer magma chamber structure may occur under the southwestern Okinawa Trough.

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

NASA Astrophysics Data System (ADS)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Method to prevent/mitigate steam explosions in casting pits

DOEpatents

Taleyarkhan, Rusi P.

1996-01-01

Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

PubMed Central

Hsu, Chih-Hung; Chen, Lung-Chien; Lin, Yi-Feng

2013-01-01

This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas. PMID:28788341

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70more » μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.« less

Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76-100% with their surface morphology and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru; Galiev, G. B.; Klimov, E. A.

The influence of the construction of a metamorphic buffer on the surface morphology and electrical properties of InAlAs/InGaAs/InAlAs nanoheterostructures with InAs content in the active layer from 76 to 100% with the use of the GaAs and InP substrates is studied. It is shown that such parameters as the electron mobility and the concentration, as well as the root-mean-square surface roughness, substantially depend on the construction of the metamorphic buffer. It is established experimentally that these parameters largely depend on the maximal local gradient of the lattice constant of the metamorphic buffer in the growth direction of the layers rathermore » than on its average value. It is shown that, with selection of the construction of the metamorphic buffer, it is possible to form nanostructured surfaces with a large-periodic profile.« less

Electrocatalytic cermet sensor

DOEpatents

Shoemaker, E.L.; Vogt, M.C.

1998-06-30

A sensor is described for O{sub 2} and CO{sub 2} gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer. 16 figs.

Electrocatalytic cermet sensor

DOEpatents

Shoemaker, Erika L.; Vogt, Michael C.

1998-01-01

A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

Fabrication of dopamine-modified hyaluronic acid/chitosan multilayers on titanium alloy by layer-by-layer self-assembly for promoting osteoblast growth

NASA Astrophysics Data System (ADS)

Zhang, Xinming; Li, Zhaoyang; Yuan, Xubo; Cui, Zhenduo; Yang, Xianjin

2013-11-01

The bare inert surface of titanium (Ti) alloy typically causes early failures in implants. Layer-by-layer self-assembly is one of the simple methods for fabricating bioactive multilayer coatings on titanium implants. In this study, a dopamine-modified hyaluronic acid/chitosan (DHA/CHI) bioactive multilayer was built on the surface of Ti-24Nb-2Zr (TNZ) alloy. Zeta potential oscillated between -2 and 17 mV for DHA- and CHI-ending layers during the assembly process, respectively. The DHA/CHI multilayer considerably decreased the contact angle and dramatically improved the wettability of TNZ alloy. Atomic force microscopy results revealed a rough surface on the original TNZ alloy, while the surface became smoother and more homogeneous after the deposition of approximately 5 bilayers (TNZ/(DHA/CHI)5). X-ray photoelectron spectroscopy analysis indicated that the TNZ/(DHA/CHI)5 sample was completely covered by polyelectrolytes. Pre-osteoblast MC3T3-E1 cells were cultured on the original TNZ alloy and TNZ/(DHA/CHI)5 to evaluate the effects of DHA/CHI multilayer on osteoblast proliferation in vitro. The proliferation of osteoblasts on TNZ/(DHA/CHI)5 was significantly higher than that on the original TNZ alloy. The results of this study indicate that the proposed technique improves the biocompatibility of TNZ alloy and can serve as a potential modification method in orthopedic applications.

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Croke, E. T.; Wang, K. L.; Heyd, A. R.; Alterovitz, S. A.; Lee, C. H.

1996-01-01

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

NASA Astrophysics Data System (ADS)

Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

2012-10-01

Three-dimensional (3D) compound solar cells with the structure of have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

Improvement of water resistance and dimensional stability of wood through titanium dioxide coating

Treesearch

Qingfeng Sun; Haipeng Yu; Yixing Liu; Jian Li; Yun Lu; John F. Hunt

2010-01-01

Moisture absorption and dimensional distortion are the major drawbacks of wood utilization as building material. In this study, poplar wood coated with a thin layer of titanium dioxide (TiO2) was prepared by the cosolvent-controlled hydrothermal method. Subsequently, its moisture absorption and dimensional stability were examined. Scanning...

Topography and nanostructural evaluation of chemically and thermally modified titanium substrates.

PubMed

Salemi, Hoda; Behnamghader, Aliasghar; Afshar, Abdollah

2016-10-01

In this research, the effects of chemical and thermal treatment on the morphological and compositional aspects of titanium substrates and so, potentially, on development of biomimetic bone like layers formation during simulated body fluid (SBF) soaking was investigated. The HF, HF/HNO3 and NaOH solutions were used for chemical treatment and some of alkali-treated samples followed a heat treatment at 600°C. The treated samples before and after soaking were subjected to material characterization tests using scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscopy (AFM). White light interferometry (WLI) was used to determine the roughness parameters such as Ra, Rq, RKu and Rsk. The significance of the obtained data was assessed using ANOVA variance analysis between all samples. It was observed that the reaction at grain boundaries and sodium titanate intermediate layers play a great role in the nucleation of calcium phosphate layers. Based on the obtained results in this work, the calcium phosphate microstructure deposited on titanium substrates was more affected by chemical modification than surface topography.

ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brigmon, R.

2009-05-05

Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. Inmore » addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.« less

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uren, Michael J.; Cäsar, Markus; Kuball, Martin

2014-06-30

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band withmore » activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.« less

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1

2013-09-21

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSbmore » islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.« less

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

The Otto Aufranc Award: Enhanced Biocompatibility of Stainless Steel Implants by Titanium Coating and Microarc Oxidation

PubMed Central

Lim, Young Wook; Kwon, Soon Yong; Sun, Doo Hoon

2010-01-01

Background Stainless steel is one of the most widely used biomaterials for internal fixation devices, but is not used in cementless arthroplasty implants because a stable oxide layer essential for biocompatibility cannot be formed on the surface. We applied a Ti electron beam coating, to form oxide layer on the stainless steel surface. To form a thicker oxide layer, we used a microarc oxidation process on the surface of Ti coated stainless steel. Modification of the surface using Ti electron beam coating and microarc oxidation could improve the ability of stainless steel implants to osseointegrate. Questions/purposes The ability of cells to adhere to grit-blasted, titanium-coated, microarc-oxidated stainless steel in vitro was compared with that of two different types of surface modifications, machined and titanium-coated, and microarc-oxidated. Methods We performed energy-dispersive x-ray spectroscopy and scanning electron microscopy investigations to assess the chemical composition and structure of the stainless steel surfaces and cell morphology. The biologic responses of an osteoblastlike cell line (SaOS-2) were examined by measuring proliferation (cell proliferation assay), differentiation (alkaline phosphatase activity), and attraction ability (cell migration assay). Results Cell proliferation, alkaline phosphatase activity, migration, and adhesion were increased in the grit-blasted, titanium-coated, microarc-oxidated group compared to the two other groups. Osteoblastlike cells on the grit-blasted, titanium-coated, microarc-oxidated surface were strongly adhered, and proliferated well compared to those on the other surfaces. Conclusions The surface modifications we used (grit blasting, titanium coating, microarc oxidation) enhanced the biocompatibility (proliferation and migration of osteoblastlike cells) of stainless steel. Clinical Relevance This process is not unique to stainless steel; it can be applied to many metals to improve their biocompatibility, thus allowing a broad range of materials to be used for cementless implants. PMID:20936386

The electrochemical oxide growth behaviour on titanium in acid and alkaline electrolytes.

PubMed

Sul, Y T; Johansson, C B; Jeong, Y; Albrektsson, T

2001-06-01

Titanium implants have a thin oxide surface layer. The properties of this oxide layer may explain the good biocompatibility of titanium implants. Anodic oxidation results in a thickening of the oxide film, with possible improved biocompatability of anodized implants. The aim of the present study was twofold: (1) firstly, to characterize the growth behaviour of galvanostatically prepared anodic oxide films on commercially pure (c.p.) titanium and (2) secondly, to establish a better understanding of the electroche0mical growth behaviour of anodic oxide on commercially pure titanium (ASTM grade 1) after changes of the electrochemical parameters in acetic acid, phosphoric acid, calcium hydroxide, and sodium hydroxide under galvanostatic anodizing mode. The oxide thickness was measured by Ar sputter etching in Auger Electron spectroscopy (AES) and the colours were estimated by an L*a*b* system (lightness, hue and saturation) using a spectrophotometer. In the first part of our study, it was demonstrated that the interference colours were useful to identify the thickness of titanium oxide. It was also found that the anodic forming voltages with slope (dV/dt) in acid electrolytes were higher than in alkaline electrolytes. Each of the used electrolytes demonstrates an intrinsically specific growth constant (nm/V) in the range of 1.4--2.78 nm/V. In the second part of our study we found, as a general trend, that an increase of electrolyte concentration and electrolyte temperature respectively decreases the anodic forming voltage, the anodic forming rate (nm/s) and the current efficiency (nm.cm(2)/C), while an increase of the current density and the surface area ratio of the anode to cathode increase the anodic forming voltage, the anodic forming rate and the current efficiency. The effects of electrolyte concentration, electrolyte temperature, and agitation speed were explained on the basis of the model of the electrical double layer.

Corrosion of titanium: Part 1: aggressive environments and main forms of degradation.

PubMed

Prando, Davide; Brenna, Andrea; Diamanti, Maria Vittoria; Beretta, Silvia; Bolzoni, Fabio; Ormellese, Marco; Pedeferri, MariaPia

2017-11-11

Titanium has outstanding corrosion resistance due to the external natural oxide protective layer formed when it is exposed to an aerated environment. Despite this, titanium may suffer different forms of corrosion in severe environments: uniform corrosion, pitting and crevice corrosion, hydrogen embrittlement, stress-corrosion cracking, fretting corrosion and erosion. In this first review, forms of corrosion affecting titanium are analyzed based on a wide literature review. For each form of corrosion, the mechanism and most severe environment are reported according to the current understanding.In the second part, this review will address the possible surface treatments that can increase corrosion resistance on commercially pure titanium: Electrochemical anodizing, thermal oxidation, chemical oxidation and bulk treatments such as alloying will be considered, highlighting the advantages of each technique.

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Selective growth of Pb islands on graphene/SiC buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, X. T.; Miao, Y. P.; Ma, D. Y.

2015-02-14

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Sincemore » Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.« less

Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

PubMed Central

Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

2014-01-01

Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

PubMed Central

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

Chemical Bath Deposited Zinc Sulfide Buffer Layers for Copper Indium Gallium Sulfur-selenide Solar Cells and Device Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundu, Sambhu N.; Olsen, Larry C.

2005-01-03

Cd free CIGSS thin film solar cell structures with a MgF2/TCO/CGD-ZnS/CIGSS/Mo/SLG structure have been fabricated using chemical bath deposited (CBD)-ZnS buffer layers and high quality CIGSS absorber layers supplied from Shell Solar Industries. The use of CBD-ZnS, which is a higher band gap materials than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm2) efficiency of 13.3%. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer materials for improving device performance.

Magma source transition of lunar mare volcanism at 2.3 Ga

NASA Astrophysics Data System (ADS)

Kato, Shinsuke; Morota, Tomokatsu; Yamaguchi, Yasushi; Watanabe, Sei-Ichiro; Otake, Hisashi; Ohtake, Makiko

2017-09-01

Mare basalts provide insights into the composition and thermal history of the lunar mantle. The ages of mare basalts suggest a first peak of magma activity at 3.2-3.8 Ga and a second peak at 2 Ga. In this study, we reassess the correlation between the titanium contents and the eruption ages of mare basalt units using the compositional and chronological data updated by SELENE (Kaguya). Using morphological and geological criteria, we calculated the titanium content of 261 mare units across a representative area of each mare unit. In the Procellarum KREEP Terrane, where the latest eruptions are located, an increase in the mean titanium content is observed during the Eratosthenian period, as reported by previous studies. We found that the increase in the mean titanium content occurred within a relatively short period near approximately 2.3 Ga, suggesting that the magma source of the mare basalts changed at this particular age. Moreover, the high-titanium basaltic eruptions are correlated with a second peak in volcanic activity near 2 Ga. The high-titanium basaltic eruptions occurring during the last volcanic activity period can be explained by the three possible scenarios (1) the ilmenite-bearing cumulate rich layer in the core-mantle boundary formed after the mantle overturn, (2) the basaltic material layers beneath the lunar crust formed through upwelling magmas, and (3) ilmenite-bearing cumulate blocks remained in the upper mantle after the mantle overturn.

Surface characteristics of anodized and hydrothermally treated titatnium with an increasing concentration of calcium ion

NASA Astrophysics Data System (ADS)

Park, Il Song; Bae, Tae Sung; Seol, Kyeong Won

2006-10-01

Titanium is widely used as an implant material due to its good mechanical properties and the excellent biocompatibility of the oxide film on the surface. To modify the unstable oxide surface of pure titanium, plasma electrolytic oxidation was applied in this study. The electrolyte used for anodizing was a mixture of GP (glycerophosphate disodium salt) and CA (calcium acetate). In addition, a hydrothermal treatment was performed to precipitate a calcium phosphate crystal on the titanium oxide layer for bioactivity. The effect of the CA concentration of the electrolyte on the surface of titanium was investigated, with CA concentrations at 0.1 M, 0.2 M, and 0.3 M. A high concentration of CA results in a low breakdown voltage; hence many large micropores were formed on the anodized surface. Moreover, the size of the HA crystals was more minute in proportion to the increasing concentration of CA. The crystal phase of titanium dioxide was mainly anatase, and a rutile phase was also observed. As the size and/or amount of HA crystals increased, the surface roughness increased. However, the surface roughness could be decreased by fully and uniformly covering the surface with HA crystals. The corrosion resistance in the saline solution was increased by anodic spark oxidation. In addition, it was slightly increased by a hydrothermal treatment. It is considered that a more stable and thicker titanium oxide layer is formed by anodic oxidation and a hydrothermal treatment.

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

NASA Astrophysics Data System (ADS)

Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

2018-05-01

Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

Solar cell contacts

NASA Technical Reports Server (NTRS)

Meier, D. L.; Campbell, R. B.; Davis, J. R., Jr.; Rai-Choudhury, P.; Sienkiewicz, L. J.

1982-01-01

Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Precision replenishable grinding tool and manufacturing process

DOEpatents

Makowiecki, D.M.; Kerns, J.A.; Blaedel, K.L.; Colella, N.J.; Davis, P.J.; Juntz, R.S.

1998-06-09

A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool are disclosed. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface. By the incorporation of an easily dissolved metal layer in the composition such allows the removal and replacement of the abrasive particles, thereby providing a process for replenishing a precisely machined grinding tool with fine abrasive particles, thus greatly reducing costs as compared to replacing expensive grinding tools. 11 figs.

Precision replenishable grinding tool and manufacturing process

DOEpatents

Makowiecki, Daniel M.; Kerns, John A.; Blaedel, Kenneth L.; Colella, Nicholas J.; Davis, Pete J.; Juntz, Robert S.

1998-01-01

A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface. By the incorporation of an easily dissolved metal layer in the composition such allows the removal and replacement of the abrasive particles, thereby providing a process for replenishing a precisely machined grinding tool with fine abrasive particles, thus greatly reducing costs as compared to replacing expensive grinding tools.

Preparation of anatase TiO2 thin film by low temperature annealing as an electron transport layer in inverted polymer solar cells

NASA Astrophysics Data System (ADS)

Noh, Hongche; Oh, Seong-Geun; Im, Seung Soon

2015-04-01

To prepare the anatase TiO2 thin films on ITO glass, amorphous TiO2 colloidal solution was synthesized through the simple sol-gel method by using titanium (IV) isopropoxide as a precursor. This amorphous TiO2 colloidal solution was spread on ITO glass by spin-coating, then treated at 450 °C to obtain anatase TiO2 film (for device A). For other TiO2 films, amorphous TiO2 colloidal solution was treated through solvothermal process at 180 °C to obtain anatase TiO2 colloidal solution. This anatase TiO2 colloidal solution was spread on ITO glass by spin coating, and then annealed at 200 °C (for device B) and 130 °C (for device C), respectively. The average particle size of amorphous TiO2 colloidal solution was about 1.0 nm and that of anatase TiO2 colloidal solution was 10 nm. The thickness of TiO2 films was about 15 nm for all cases. When inverted polymer solar cells were fabricated by using these TiO2 films as an electron transport layer, the device C showed the highest PCE (2.6%) due to the lack of defect, uniformness and high light absorbance of TiO2 films. The result of this study can be applied for the preparation of inverted polymer solar cell using TiO2 films as a buffer layer at low temperature on plastic substrate by roll-to roll process.

Comparison of different photoresist buffer layers in SPR sensors based on D-shaped POF and gold film

NASA Astrophysics Data System (ADS)

Cennamo, Nunzio; Pesavento, Maria; De Maria, Letizia; Galatus, Ramona; Mattiello, Francesco; Zeni, Luigi

2017-04-01

A comparative analysis of two optical fiber sensing platforms is presented. The sensors are based on surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) with a photoresist buffer layer between the exposed POF core and the thin gold film. We show how the sensor's performances change when the photoresist layer changes. The photoresist layers proposed in this analysis are SU-8 3005 and S1813. The experimental results are congruent with the numerical studies and it is instrumental for chemical and bio-chemical applications. Usually, the photoresist layer is required in order to increase the performance of the SPR-POF sensor.

Structural changes of anodic layer on titanium in sulfate solution as a function of anodization duration in constant current mode

NASA Astrophysics Data System (ADS)

Komiya, Shinji; Sakamoto, Kouta; Ohtsu, Naofumi

2014-03-01

The present study investigated the effect of anodization time, in constant current mode, on the anodic oxide layer formed on titanium (Ti). Anodization of the Ti substrate was　carried out in a 0.1 M (NH4)2SO4 aqueous solution with reaction times of various durations, after which the characteristics and photocatalytic activity were investigated in detail. The TiO2 layer fabricated in a short duration exhibited comparatively flat surface morphology and an anatase-type crystal structure. This layer acted as a photocatalyst only under ultraviolet light (UV) illumination. Upon prolonging the anodization, the layer structure changed drastically. The surface morphology became rough, and the crystal structure changed to rutile-type TiO2. Furthermore, the layer showed photocatalytic activity both under UV and visible light illumination. Further anodization increased the amount of methylene blue (MB) adsorbed on the surface, but did not cause additional change to the structure of the anodic layer. The surface morphology and crystal structure of the anodic layer were predominantly controlled by the anodization time; thus, the anodization time is an important parameter for controlling the characteristics of the anodic layer.

Chlorhexidine Uptake and Release From Modified Titanium Surfaces and Its Antimicrobial Activity.

PubMed

Ryu, Hyo-Sook; Kim, Yoon-Il; Lim, Bum-Soon; Lim, Young-Jun; Ahn, Sug-Joon

2015-11-01

Decontamination by adjunctive antiseptic agents such as chlorhexidine (CHX) is often recommended for the treatment of peri-implant infections. However, its action on the titanium implant surface needs further research. This study is designed to evaluate the ability of modified titanium surfaces to release chlorhexidine after periodic CHX exposure. Four titanium surfaces were prepared: 1) no surface treatment control (machined surface [MA]); 2) an acid mix of 10% HNO3 and 5% HF (HNF); 3) resorbable blast media (RBM); and 4) sandblasting and acid etching (SLA). Each surface was analyzed using a confocal laser scanning microscope and a scanning electron microscope. Each sample was incubated with whole saliva or phosphate-buffered saline for 2 hours. Measurements of CHX release were performed using spectrometry on days 1, 2, and 5 after 1-minute exposure to 0.5% chlorhexidine digluconate solution during a 5-day cycle. CHX-releasing experiments were repeated three consecutive times for 15 days. The antimicrobial activity of CHX-adsorbed disks was determined by a disk diffusion test using Streptococcus gordonii. The CHX-adsorbed titanium surfaces exhibited a short-term release of CHX, and CHX levels dropped rapidly within 3 days. SLA and RBM with smaller and narrower depressions released more CHX than HNF and MA, specifically in the saliva-coated group. The disk diffusion test revealed that after CHX uptake, saliva-coated SLA and RBM showed the highest antimicrobial activity. This study suggests that CHX release is significantly influenced by titanium surface modifications and that SLA and RBM might provide effective CHX uptake capacity in the saliva-filled oral cavity.

Application of diffusion barriers to the refractory fibers of tungsten, columbium, carbon and aluminum oxide

NASA Technical Reports Server (NTRS)

Douglas, F. C.; Paradis, E. L.; Veltri, R. D.

1973-01-01

A radio frequency powered ion-plating system was used to plate protective layers of refractory oxides and carbide onto high strength fiber substrates. Subsequent overplating of these combinations with nickel and titanium was made to determine the effectiveness of such barrier layers in preventing diffusion of the overcoat metal into the fibers with consequent loss of fiber strength. Four substrates, five coatings, and two metal matrix materials were employed for a total of forty material combinations. The substrates were tungsten, niobium, NASA-Hough carbon, and Tyco sapphire. The diffusion-barrier coatings were aluminum oxide, yttrium oxide, titanium carbide, tungsten carbide with 14% cobalt addition, and zirconium carbide. The metal matrix materials were IN 600 nickel and Ti 6/4 titanium. Adhesion of the coatings to all substrates was good except for the NASA-Hough carbon, where flaking off of the oxide coatings in particular was observed.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hönes, C., E-mail: christian.hoenes@de.bosch.com; Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux; Hackenberg, J.

2015-03-07

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energymore » for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.« less

Modelling and simulation of high-frequency (100 MHz) ultrasonic linear arrays based on single crystal LiNbO3.

PubMed

Zhang, J Y; Xu, W J; Carlier, J; Ji, X M; Nongaillard, B; Queste, S; Huang, Y P

2012-01-01

High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the fabrication of conventional backing-layer structure, which requires a pitch (distance between the centers of two adjacent elements) of half wavelength in medium, is really a great challenge. Here we present an alternative buffer-layer structure with a silicon lens for volumetric imaging. The requirement for the size of the pitch is less critical for this structure, making it possible to fabricate high-frequency (100MHz) ultrasonic linear array transducers. Using silicon substrate also makes it possible to integrate the arrays with IC (Integrated Circuit). To compare with the conventional backing-layer structure, a finite element tool, COMSOL, is employed to investigate the performances of acoustic beam focusing, the influence of pitch size for the buffer-layer configuration, and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. For a 100MHz 10-element array of buffer-layer structure, the ultrasound beam in azimuth plane in water could be electronically focused to obtain a spatial resolution (a half-amplitude width) of 86μm at the focal depth. When decreasing from half wavelength in silicon (42μm) to half wavelength in water (7.5μm), the pitch sizes weakly affect the focal resolution. The lateral spatial resolution is increased by 4.65% when the pitch size decreases from 42μm to 7.5μm. The crosstalk between adjacent elements at the central frequency is, respectively, -95dB, -39.4dB, and -60.5dB for the 10-element buffer, 49-element buffer and 49-element backing arrays. Additionally, the electrical impedance magnitudes for each structure are, respectively, 4kΩ, 26.4kΩ, and 24.2kΩ, which is consistent with calculation results using Krimholtz, Leedom, and Matthaei (KLM) model. These results show that the buffer-layer configuration is a promising alternative for the fabrication of high-frequency ultrasonic linear arrays dedicated to volumetric imaging. Copyright © 2011 Elsevier B.V. All rights reserved.

Calcium phosphate coating of nickel-titanium shape-memory alloys. Coating procedure and adherence of leukocytes and platelets.

PubMed

Choi, Jongsik; Bogdanski, Denise; Köller, Manfred; Esenwein, Stefan A; Müller, Dietmar; Muhr, Gert; Epple, Matthias

2003-09-01

Nickel-titanium shape-memory alloys (NiTi-SMA) were coated with calcium phosphate by dipping in oversaturated calcium phosphate solution. The layer thickness (typically 5-20 micrometer) can be varied by choice of the immersion time. The porous nature of the layer of microcrystals makes it mechanically stable enough to withstand both the shape-memory transition upon cooling and heating and also strong bending of the material (superelastic effect). This layer may improve the biocompatibility of NiTi-SMA, particulary for osteosynthetic devices by creating a more physiological surface and by restricting a potential nickel release. The adherence of human leukocytes (peripheral blood mononuclear cells and polymorphonuclear neutrophil granulocytes) and platelets to the calcium phosphate layer was analyzed in vitro. In comparison to non-coated NiTi-SMA, leukocytes and platelets showed a significantly increased adhesion to the coated NiTi-SMA.

Adhesion of Porphyromonas gingivalis and Tannerella forsythia to dentin and titanium with sandblasted and acid etched surface coated with serum and serum proteins - An in vitro study.

PubMed

Eick, Sigrun; Kindblom, Christian; Mizgalska, Danuta; Magdoń, Anna; Jurczyk, Karolina; Sculean, Anton; Stavropoulos, Andreas

2017-03-01

To evaluate the adhesion of selected bacterial strains incl. expression of important virulence factors at dentin and titanium SLA surfaces coated with layers of serum proteins. Dentin- and moderately rough SLA titanium-discs were coated overnight with human serum, or IgG, or human serum albumin (HSA). Thereafter, Porphyromonas gingivalis, Tannerella forsythia, or a six-species mixture were added for 4h and 24h. The number of adhered bacteria (colony forming units; CFU) was determined. Arg-gingipain activity of P. gingivalis and mRNA expressions of P. gingivalis and T. forsythia proteases and T. forsythia protease inhibitor were measured. Coating specimens never resulted in differences exceeding 1.1 log10 CFU, comparing to controls, irrespective the substrate. Counts of T. forsythia were statistically significantly higher at titanium than dentin, the difference was up to 3.7 log10 CFU after 24h (p=0.002). No statistically significant variation regarding adhesion of the mixed culture was detected between surfaces or among coatings. Arg-gingipain activity of P. gingivalis was associated with log10 CFU but not with the surface or the coating. Titanium negatively influenced mRNA expression of T. forsythia protease inhibitor at 24h (p=0.026 uncoated, p=0.009 with serum). The present findings indicate that: a) single bacterial species (T. forsythia) can adhere more readily to titanium SLA than to dentin, b) low expression of T. forsythia protease inhibitor may influence the virulence of the species on titanium SLA surfaces in comparison with teeth, and c) surface properties (e.g. material and/or protein layers) do not appear to significantly influence multi-species adhesion. Copyright © 2016 Elsevier Ltd. All rights reserved.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

[Apatite-forming ability of pure titanium implant after micro-arc oxidation treatment].

PubMed

Tian, Zhihui; Zhang, Yu; Wang, Lichao; Nan, Kaihui

2013-10-01

To investigate the apatite forming ability of pure titanium implant after micro-arc oxidation treatment in simulated body fluid (SBF) and obtain implants with calcium phosphate (Ca-P) layers. The implants were immersed in (SBF) after micro-arc oxidation treatment for different time lengths, and their apatite forming ability and the morphology and constituents of the Ca-P layers formed on the sample surface were analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and energy dispersive electron probe. After immersion in SBF, large quantities of Ca-P layers were induced on the surface of the samples. The Ca-P layers were composed of octacalcium phosphate and carbonated hydroxyapatite, and the crystals showed a plate-like morphology with an oriented growth. The implants with micro-arc oxidation treatment show good apatite forming ability on the surface with rich calcium and phosphorus elements. The formed layers are composed of bone-like apatite including octacalcium phosphate and carbonated hydroxyapatite.

Charge density wave transition in single-layer titanium diselenide

DOE PAGES

Chen, P.; Chan, Y. -H.; Fang, X. -Y.; ...

2015-11-16

A single molecular layer of titanium diselenide (TiSe 2) is a promising material for advanced electronics beyond graphene--a strong focus of current research. Such molecular layers are at the quantum limit of device miniaturization and can show enhanced electronic effects not realizable in thick films. We show that single-layer TiSe 2 exhibits a charge density wave (CDW) transition at critical temperature T C=232±5 K, which is higher than the bulk T C=200±5 K. Angle-resolved photoemission spectroscopy measurements reveal a small absolute bandgap at room temperature, which grows wider with decreasing temperature T below T C in conjunction with the emergencemore » of (2 × 2) ordering. The results are rationalized in terms of first-principles calculations, symmetry breaking and phonon entropy effects. The behavior of the Bardeen-Cooper-Schrieffer (BCS) gap implies a mean-field CDW order in the single layer and an anisotropic CDW order in the bulk.« less

Superconducting structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2003-04-01

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Superconducting Structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2005-09-13

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Self-Functionalization Behind a Solution-Processed NiOx Film Used As Hole Transporting Layer for Efficient Perovskite Solar Cells.

PubMed

Ciro, John; Ramírez, Daniel; Mejía Escobar, Mario Alejandro; Montoya, Juan Felipe; Mesa, Santiago; Betancur, Rafael; Jaramillo, Franklin

2017-04-12

Fabrication of solution-processed perovskite solar cells (PSCs) requires the deposition of high quality films from precursor inks. Frequently, buffer layers of PSCs are formed from dispersions of metal oxide nanoparticles (NPs). Therefore, the development of trustable methods for the preparation of stable colloidal NPs dispersions is crucial. In this work, a novel approach to form very compact semiconducting buffer layers with suitable optoelectronic properties is presented through a self-functionalization process of the nanocrystalline particles by their own amorphous phase and without adding any other inorganic or organic functionalization component or surfactant. Such interconnecting amorphous phase composed by residual nitrate, hydroxide, and sodium ions, proved to be fundamental to reach stable colloidal dispersions and contribute to assemble the separate crystalline nickel oxide NPs in the final film, resulting in a very homogeneous and compact layer. A proposed mechanism behind the great stabilization of the nanoparticles is exposed. At the end, the self-functionalized nickel oxide layer exhibited high optoelectronic properties enabling perovskite p-i-n solar cells as efficient as 16.6% demonstrating the pertinence of the presented strategy to obtain high quality buffer layers processed in solution at room temperature.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

Transparent TiO 2 nanotube array photoelectrodes prepared via two-step anodization

DOE PAGES

Kim, Jin Young; Zhu, Kai; Neale, Nathan R.; ...

2014-04-04

Two-step anodization of transparent TiO 2 nanotube arrays has been demonstrated with aid of a Nb-doped TiO 2 buffer layer deposited between the Ti layer and TCO substrate. Enhanced physical adhesion and electrochemical stability provided by the buffer layer has been found to be important for successful implementation of the two-step anodization process. As a result, with the proposed approach, the morphology and thickness of NT arrays could be controlled very precisely, which in turn, influenced their optical and photoelectrochemical properties.

Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

DTIC Science & Technology

2013-08-02

The character of the I–V for structures with AlInSb layer grown undoped reflects the complex nature of the potential profile in the valence band ...Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb substrates by...ABSTRACT InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb

Series interconnected photovoltaic cells and method for making same

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes R.; Thompson, Roger A.

1995-01-01

A novel photovoltaic module (10) and method for constructing the same are disclosed. The module (10) includes a plurality of photovoltaic cells (12) formed on a substrate (14) and laterally separated by interconnection regions (15). Each cell (12) includes a bottom electrode (16), a photoactive layer (18) and a top electrode layer (20). Adjacent cells (12) are connected in electrical series by way of a conductive-buffer line (22). The buffer line (22) is also useful in protecting the bottom electrode (16) against severing during downstream layer cutting processes.

Method to prevent/mitigate steam explosions in casting pits

DOEpatents

Taleyarkhan, R.P.

1996-12-24

Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water. 3 figs.

Osteoblasts generate harder, stiffer, and more delamination-resistant mineralized tissue on titanium than on polystyrene, associated with distinct tissue micro- and ultrastructure.

PubMed

Saruwatari, Lei; Aita, Hideki; Butz, Frank; Nakamura, Hiromi K; Ouyang, Jianyong; Yang, Yang; Chiou, Wen-An; Ogawa, Takahiro

2005-11-01

This study revealed that osteoblasts generate harder, stiffer, and more delamination-resistant mineralized tissue on titanium than on the tissue culture polystyrene, associated with modulated gene expression, uniform mineralization, well-crystallized interfacial calcium-phosphate layer, and intensive collagen deposition. Knowledge of this titanium-induced alteration of osteogenic potential leading to enhanced intrinsic biomechanical properties of mineralized tissue provides novel opportunities and implications for understanding and improving bone-titanium integration and engineering physiomechanically tolerant bone. Bone-titanium integration is a biological phenomenon characterized by continuous generation and preservation of peri-implant bone and serves as endosseous anchors against endogenous and exogenous loading, of which mechanisms are poorly understood. This study determines the intrinsic biomechanical properties and interfacial strength of cultured mineralized tissue on titanium and characterizes the tissue structure as possible contributing factors in biomechanical modulation. Rat bone marrow-derived osteoblastic cells were cultured either on a tissue culture-grade polystyrene dish or titanium-coated polystyrene dish having comparable surface topography. Nano-indentation and nano-scratch tests were undertaken on mineralized tissues cultured for 28 days to evaluate its hardness, elastic modulus, and critical load (force required to delaminate tissue). Gene expression was analyzed using RT-PCR. The tissue structural properties were examined by scanning electron microscopy (SEM), collagen colorimetry and localization with Sirius red stain, mineral quantification, and localization with von Kossa stain and transmission electron microscopy (TEM). Hardness and elastic modulus of mineralized tissue on titanium were three and two times greater, respectively, than those on the polystyrene. Three times greater force was required to delaminate the tissue on titanium than that on the polystyrene. SEM of the polystyrene culture displayed a porous structure consisting of fibrous and globular components, whereas the titanium tissue culture appeared to be uniformly solid. Cell proliferation was remarkably reduced on titanium. Microscopic observations revealed that the mineralized tissue on titanium was composed of uniform collagen-supported mineralization from the titanium interface to the outer surface, with intensive collagen deposition at tissue-titanium interface. In contrast, tissue on the polystyrene was characterized by collagen-deficient mineralization at the polystyrene interface and calcium-free collagenous matrix formation in the outer tissue area. Such characteristic microstructure of titanium-associated tissue was corresponded with upregulated gene expression of collagen I and III, osteopontin, and osteocalcin mRNA. Cross-sectional TEM revealed the apposition of a high-contrast and well-crystallized calcium phosphate layer at the titanium interface but not at the polystyrene interface. Culturing osteoblasts on titanium, compared with polystyrene, enhances the hardness, elastic modulus, and interfacial strength of mineralized tissue to a higher degree. Titanium per se possesses an ability to alter cellular phenotypes and tissue micro- and ultrastructure that result in enhanced intrinsic biomechanical properties of mineralized tissue.

Present status of titanium removable dentures--a review of the literature.

PubMed

Ohkubo, C; Hanatani, S; Hosoi, T

2008-09-01

Although porcelain and zirconium oxide might be used for fixed partial dental prostheses instead of conventional dental metals in the near future, removable partial denture (RPD) frameworks will probably continue to be cast with biocompatible metals. Commercially pure (CP) titanium has appropriate mechanical properties, it is lightweight (low density) compared with conventional dental alloys, and has outstanding biocompatibility that prevents metal allergic reactions. This literature review describes the laboratory conditions needed for fabricating titanium frameworks and the present status of titanium removable prostheses. The use of titanium for the production of cast RPD frameworks has gradually increased. There are no reports about metallic allergy apparently caused by CP titanium dentures. The laboratory drawbacks still remain, such as the lengthy burn-out, inferior castability and machinability, reaction layer formed on the cast surface, difficulty of polishing, and high initial costs. However, the clinical problems, such as discoloration of the titanium surfaces, unpleasant metal taste, decrease of clasp retention, tendency for plaque to adhere to the surface, detachment of the denture base resin, and severe wear of titanium teeth, have gradually been resolved. Titanium RPD frameworks have never been reported to fail catastrophically. Thus, titanium is recommended as protection against metal allergy, particularly for large-sized prostheses such as RPDs or complete dentures.

Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

NASA Astrophysics Data System (ADS)

Wang, F.; Dong, B. J.; Zhang, Y. Q.; Liu, W.; Zhang, H. R.; Bai, Y.; Li, S. K.; Yang, T.; Sun, J. R.; Wang, Z. J.; Zhang, Z. D.

2017-09-01

The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33MnO3/CaMnO3 interface, which arises from a competition between the double-exchange ferromagnetic La0.67Ca0.33MnO3 and super-exchange antiferromagnetic CaMnO3 below the spin glass freezing temperature.

Data Elevator

DOE Office of Scientific and Technical Information (OSTI.GOV)

BYNA, SUNRENDRA; DONG, BIN; WU, KESHENG

Data Elevator: Efficient Asynchronous Data Movement in Hierarchical Storage Systems Multi-layer storage subsystems, including SSD-based burst buffers and disk-based parallel file systems (PFS), are becoming part of HPC systems. However, software for this storage hierarchy is still in its infancy. Applications may have to explicitly move data among the storage layers. We propose Data Elevator for transparently and efficiently moving data between a burst buffer and a PFS. Users specify the final destination for their data, typically on PFS, Data Elevator intercepts the I/O calls, stages data on burst buffer, and then asynchronously transfers the data to their final destinationmore » in the background. This system allows extensive optimizations, such as overlapping read and write operations, choosing I/O modes, and aligning buffer boundaries. In tests with large-scale scientific applications, Data Elevator is as much as 4.2X faster than Cray DataWarp, the start-of-art software for burst buffer, and 4X faster than directly writing to PFS. The Data Elevator library uses HDF5's Virtual Object Layer (VOL) for intercepting parallel I/O calls that write data to PFS. The intercepted calls are redirected to the Data Elevator, which provides a handle to write the file in a faster and intermediate burst buffer system. Once the application finishes writing the data to the burst buffer, the Data Elevator job uses HDF5 to move the data to final destination in an asynchronous manner. Hence, using the Data Elevator library is currently useful for applications that call HDF5 for writing data files. Also, the Data Elevator depends on the HDF5 VOL functionality.« less

Emission wavelength red-shift by using ;semi-bulk; InGaN buffer layer in InGaN/InGaN multiple-quantum-well

NASA Astrophysics Data System (ADS)

Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2017-12-01

We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is fully strained on the n-GaN template, the MQW structure with the buffer has ∼15% relaxation. This small relaxation along with slight compositional pulling induced well thickness increase of MQW is believed to be the reason for the red-shift of emission wavelength. In addition, the SB InGaN buffer acts as an electron reservoir and also helps to reduce the Quantum Confined Stark Effect (QCSE) and thus increase the emission intensity. In this way, by avoiding fully relaxed buffer induced material degradation, a longer emission wavelength can be achieved by just using InGaN SB buffer while keeping all other growth conditions the same as the reference structure. Thus, a reasonably thick fully strained or very little relaxed InGaN buffer, which is realized by ;semi-bulk; approach to maintain good InGaN material quality, can be beneficial for realizing LEDs, grown on top of this buffer, emitting in the blue to cyan to green regime without using excess indium (In).

Plasma electrolytic oxidation of Titanium Aluminides

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Sieber, M.; Grund, T.; Lampke, T.; Wielage, B.

2016-03-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na2SiO3·5H2O and K4P2O7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum.

Forming a single layer of a composite powder based on the Ti-Nb system via selective laser melting (SLM)

NASA Astrophysics Data System (ADS)

Saprykin, A. A.; Sharkeev, Yu P.; Ibragimov, E. A.; Babakova, E. V.; Dudikhin, D. V.

2016-07-01

Alloys based on the titanium-niobium system are widely used in implant production. It is conditional, first of all, on the low modulus of elasticity and bio-inert properties of an alloy. These alloys are especially important for tooth replacement and orthopedic surgery. At present alloys based on the titanium-niobium system are produced mainly using conventional metallurgical methods. The further subtractive manufacturing an end product results in a lot of wastes, increasing, therefore, its cost. The alternative of these processes is additive manufacturing. Selective laser melting is a technology, which makes it possible to synthesize products of metal powders and their blends. The point of this technology is laser melting a layer of a powdered material; then a sintered layer is coated with the next layer of powder etc. Complex products and working prototypes are made on the base of this technology. The authors of this paper address to the issue of applying selective laser melting in order to synthesize a binary alloy of a composite powder based on the titanium-niobium system. A set of 10x10 mm samples is made in various process conditions. The samples are made by an experimental selective laser synthesis machine «VARISKAF-100MB». The machine provides adjustment of the following process variables: laser emission power, scanning rate and pitch, temperature of powder pre-heating, thickness of the layer to be sprinkled, and diameter of laser spot focusing. All samples are made in the preliminary vacuumized shielding atmosphere of argon. The porosity and thickness of the sintered layer related to the laser emission power are shown at various scanning rates. It is revealed that scanning rate and laser emission power are adjustable process variables, having the greatest effect on forming the sintered layer.

LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

NASA Astrophysics Data System (ADS)

Strecker, B. N.; McCann, P. J.; Fang, X. M.; Hauenstein, R. J.; O'Steen, M.; Johnson, M. B.

1997-05-01

Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation.

Bimetallic nanocomposite as hole transport co-buffer layer in organic solar cell

NASA Astrophysics Data System (ADS)

Mola, Genene Tessema; Arbab, Elhadi A. A.

2017-12-01

Silver-zinc bimetallic nanocomposite (Ag:Zn BiM-NPs) was used as an inter-facial buffer layer in the preparation of thin film organic solar cell (TFOSC). The current investigation focuses on the effect of bimetallic nanoparticles on the performance of TFOSC. A number experiments were conducted by employing Ag:Zn nanocomposite buffer layer of thickness 1 nm at various positions of the device structure. In all cases, we found significant improvement on the power conversion efficiency of the solar cells. It is also noted that the open circuit voltage of the devices are decreasing when Ag:Zn form direct contact with the ITO electrode and without the inclusion of PEDOT:PSS. However, all results show that the introduction of Ag:Zn nanocomposite layer close to PEDOT:PSS could be beneficial to improve the charge transport processes in the preparation of thin film organic solar cell. The Ag:Zn BiM-NPs and the device properties were presented and discussed in terms of optical, electrical and film morphologies of the devices.

V2O5 thin film deposition for application in organic solar cells

NASA Astrophysics Data System (ADS)

Arbab, Elhadi A. A.; Mola, Genene Tessema

2016-04-01

Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

Methods for improved growth of group III nitride semiconductor compounds

DOEpatents

Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

2015-03-17

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Simulation of the effect of photoprotective titanium dioxide (TiO2) and zinc oxide (ZnO) nanoparticles on the thermal response and optical characteristics of skin

NASA Astrophysics Data System (ADS)

Krasnikov, I. V.; Seteikin, A. Yu.; Popov, A. P.

2015-04-01

The thermal response of skin covered with a mixture of titanium dioxide (TiO2) and zinc oxide (ZnO) nanoparticles of optimal sizes and irradiated by sunlight has been calculated. The nanoparticles were rubbed into the skin for maximum protection against the incident radiation. The dependences of the temperature dynamics in different skin layers (corneal layer, epidermis, dermis) have been obtained and analyzed upon skin irradiation with light at a wavelength of 310-800 nm. It has been found that increasing light scattering and absorption due to the nanoparticles introduced into the corneal layer resulted in a decrease in the thermal load and penetration depth of the incident radiation.

The role of electro-explosion alloying with titanium diboride and treatment with pulsed electron beam in the surface modification of VT6 alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konovalov, Sergey, E-mail: konovserg@gmail.com; Gromov, Victor, E-mail: gromov@physics.sibsiu.ru; Kobzareva, Tatyana

The paper presents the results of the investigation of VT6 titanium alloy subjected to electro-explosion alloying with TiB{sub 2} and irradiation with pulsed electron beam. It was established that electro-explosion alloying resulted in a high level of roughness of the surface layer with high adhesion of the modified layer and matrix. Further irradiation of the material with electron beam resulted in the smoothing of the surface of alloying and formation of a porous structure with various scale levels in the surface layer. It was also established that the energetic exposure causes the formation of a gradient structure with a changingmore » elemental composition along the direction from the surface of alloying.« less

Photochromic, electrochromic, photoelectrochromic and photovoltaic devices

DOEpatents

Kostecki, Robert; McLarnon, Frank R.

2000-01-01

A light activated photoelectrochromic device is formed of a two-component system formed of a photoactive charge carrier generating material and electrochromic material (plus an elecrolyte). Light interacts with a semiconductive material to generate hole-electron charge carriers which cause a redox reaction in the electrochromic material. One device is formed of hydrated nickel oxide as the electrochromic layer and polycrystalline titanium dioxide as the charge generating material. The materials may be formed as discrete layers or mixed together. Because of the direct charge transfer between the layers, a circuit to apply a voltage to drive the electrochromic reaction is not required, although one can be used to enhance the reaction. The hydrated nickel oxide-titanium dioxide materials can also be used to form a photovoltaic device for generating electricity.

Effect of six different peri-implantitis disinfection methods on in vivo human oral biofilm.

PubMed

Gosau, Martin; Hahnel, Sebastian; Schwarz, Frank; Gerlach, Till; Reichert, Torsten E; Bürgers, Ralf

2010-08-01

The aim of this human in vivo pilot study was to evaluate the efficacy of six antimicrobial agents on the surface decontamination of an oral biofilm attached to titanium implants. For in vivo biofilm formation, we fixed titanium specimens to individual removable acrylic upper jaw splints (14 specimens in every splint), which were worn by four volunteers overnight for 12 h. The specimens were then treated with different antimicrobial agents for 1 min (Sodium hypochlorite, Hydrogen peroxide 3%, Chlorhexidingluconate 0.2%, Plax, Listerine, citric acid 40%). Afterwards, we quantified the total bacterial load and the viability of adhering bacteria by live or dead cell labelling in combination with fluorescence microscopy. The total bacterial load on the titanium surfaces was significantly higher after incubation in the control solution phosphate-buffered saline (PBS) than after disinfection in sodium hypochlorite, hydrogen peroxide, chlorhexidine, Plax, Listerine, and citric acid. Furthermore, a significantly lower ratio between dead and total adhering bacteria (bactericidal effect) was found after incubation in control PBS, Plax mouth rinse, and citric acid than after incubation in sodium hypochlorite, hydrogen peroxide, chlorhexidine, and Listerine. All tested antiseptics seem to be able to reduce the total amount of microorganisms accumulating on titanium surfaces. Furthermore, sodium hypochlorite, hydrogen peroxide, chlorhexidine, and Listerine showed a significant bactericidal effect against adhering bacteria.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.