Titanium nitride electrodes for thermoelectric generators
Novak, Robert F.; Schmatz, Duane J.; Hunt, Thomas K.
1987-12-22
The invention is directed to a composite article suitable for use in thermoelectric generators. The article comprises a thin film of titanium nitride as an electrode deposited onto solid electrolyte. The invention is also directed to the method of making same.
Architecture for coated conductors
Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana
2010-06-01
Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.
Grafting titanium nitride surfaces with sodium styrene sulfonate thin films
Zorn, Gilad; Migonney, Véronique; Castner, David G.
2014-01-01
The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm2. PMID:25280842
NASA Astrophysics Data System (ADS)
Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael
We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.
NASA Astrophysics Data System (ADS)
Sosnin, D.; Kudryashov, D.; Mozharov, A.
2017-11-01
Titanium nitride is a promising material due to its low resistivity, high hardness and chemical inertness. Titanium nitride (TiN) can be applied as an ohmic contact for n-GaN and rectifying contact for p-GaN and also as a part of perovskite solar cell. A technology of TiN low temperature reactive rf-magnetron sputtering has been developed. Electrical and optical properties of titanium nitride were studied as a function of the rf-power and gas mixture composition. Reflectance and transmittance spectra were measured. Cross-section and surface SEM image were obtained. 250 nm thin films of TiN with a resistivity of 23.6 μOm cm were obtained by rf-magnetron sputtering at low temperature.
Surface modification of titanium nitride film by a picosecond Nd:YAG laser
NASA Astrophysics Data System (ADS)
Gakovic, B.; Trtica, M.; Batani, D.; Desai, T.; Panjan, P.; Vasiljevic-Radovic, D.
2007-06-01
The interaction of a picosecond Nd:YAG laser (wavelength 532 nm, pulse duration 40 ps) with a polycrystalline titanium nitride (TiN) film was studied. The TiN thin film was deposited by physical vapour deposition on a silicon substrate. The titanium nitride/silicon system was modified with an energy fluence from 0.2 to 5.9 J cm-2. Multi-pulse irradiation was performed in air by a focused laser beam. Surface modifications were analysed after 1 100 successive laser pulses. Depending on the laser pulse energy and pulse count, the following phenomena were observed: (i) increased surface roughness, (ii) titanium nitride film cracking, (iii) silicon substrate modification, (iv) film exfoliation and (v) laser-induced periodical surface structures on nano- (NPSS) and micro-dimensions (MPSS).
Structural and mechanical properties of CVD deposited titanium aluminium nitride (TiAlN) thin films
NASA Astrophysics Data System (ADS)
Das, Soham; Guha, Spandan; Ghadai, Ranjan; Kumar, Dhruva; Swain, Bibhu P.
2017-06-01
Titanium aluminium nitride (TiAlN) thin films were deposited by chemical vapour deposition using TiO2 powder, Al powder and N2 gas. The morphology and mechanical properties of the films were characterized by scanning electron microscopy and nanoindentation technique, respectively. The structural properties were characterized by Raman spectroscopy and X-ray diffraction. The XRD result shows TiAlN films are of NaCl-type metal nitride structure. Micro-Raman peaks of the TiAlN thin film were observed within 450 and 642 cm-1 for acoustic and optic range, respectively. A maximum hardness and Young modulus up to 22 and 272.15 GPa, respectively, were observed in the TiAlN film deposited at 1200 °C.
Titanium nitride thin films for minimizing multipactoring
Welch, Kimo M.
1979-01-01
Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Selvan, J.S.; Subramanian, K.; Nath, A.K.
Surface nitriding of commercially pure (CP) titanium was carried out using high power CO{sub 2} laser at pure nitrogen and dilute nitrogen (N{sub 2} + Ar) environment. The hardness, microstructure, and melt pool configuration of the laser melted titanium in helium and argon atmosphere was compared with laser melting at pure and dilute nitrogen environment. The hardness of the nitrided layer was of the order of 1000 to 1600 HV. The hardness of the laser melted titanium in the argon and helium atmosphere was 500 to 1000 HV. Using x-ray analysis of the formation of TiN and Ti{sub 2}N phasemore » was identified in the laser nitrided titanium. The presence of nitrogen in the nitrided zone was confirmed using secondary ion mass spectroscopy (SIMS) analysis. The microstructures revealed densely populated dendrites in the sample nitrided at 100% N{sub 2} environment and thinly populated dendrites in dilute environment. The crack intensity was large in the nitrided sample at pure nitrogen, and few cracks were observed in the 50% N{sub 2} + 50% Ar environment.« less
Thin Thermal-Insulation Blankets for Very High Temperatures
NASA Technical Reports Server (NTRS)
Choi, Michael K.
2003-01-01
Thermal-insulation blankets of a proposed type would be exceptionally thin and would endure temperatures up to 2,100 C. These blankets were originally intended to protect components of the NASA Solar Probe spacecraft against radiant heating at its planned closest approach to the Sun (a distance of 4 solar radii). These blankets could also be used on Earth to provide thermal protection in special applications (especially in vacuum chambers) for which conventional thermal-insulation blankets would be too thick or would not perform adequately. A blanket according to the proposal (see figure) would be made of molybdenum, titanium nitride, and carbon- carbon composite mesh, which melt at temperatures of 2,610, 2,930, and 2,130 C, respectively. The emittance of molybdenum is 0.24, while that of titanium nitride is 0.03. Carbon-carbon composite mesh is a thermal insulator. Typically, the blanket would include 0.25-mil (.0.00635-mm)-thick hot-side and cold-side cover layers of molybdenum. Titanium nitride would be vapor-deposited on both surfaces of each cover layer. Between the cover layers there would be 10 inner layers of 0.15-mil (.0.0038-mm)-thick molybdenum with vapor-deposited titanium nitride on both sides of each layer. The thickness of each titanium nitride coat would be about 1,000 A. The cover and inner layers would be interspersed with 0.25-mil (0.00635-mm)-thick layers of carbon-carbon composite mesh. The blanket would have total thickness of 4.75 mils (approximately equal to 0.121 mm) and an areal mass density of 0.7 kilograms per square meter. One could, of course, increase the thermal- insulation capability of the blanket by increasing number of inner layers (thereby unavoidably increasing the total thickness and mass density).
NASA Astrophysics Data System (ADS)
Doiron, Brock; Li, Yi; Mihai, Andrei P.; Cohen, Lesley F.; Petrov, Peter K.; Alford, Neil M.; Oulton, Rupert F.; Maier, Stefan A.
2017-08-01
With similar optical properties to gold and high thermal stability, titanium nitride continues to prove itself as a promising plasmonic material for high-temperature applications in the visible and near-infrared. In this work, we use transient pump probe differential reflection measurements to compare the electron energy decay channels in titanium nitride and gold thin films. Using an extended two temperature model to incorporate the photoexcited electrons, it is possible to separate the electron-electron and electron-phonon scattering contributions immediately following the arrival of the pump pulse. This model allows for incredibly accurate determination of the internal electronic properties using only optical measurements. As the electronic properties are key in hot electron applications, we show that titanium nitide has substantially longer electron thermalization and electron-phonon scattering times. With this, we were also able to resolve electron thermal conduction in the film using purely optical measurements.
Thin film deposition by electric and magnetic crossed-field diode sputtering
Welch, Kimo M.
1977-01-01
Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.
Thin film deposition by electric and magnetic crossed-field diode sputtering
Welch, Kimo M.
1980-01-01
Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.
NASA Astrophysics Data System (ADS)
Aziz, Tareque; Rumaiz, Abdul
Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.
Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br
2015-07-15
Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical,more » structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.« less
Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system
NASA Astrophysics Data System (ADS)
Hussain, T.; R., Ahmad; Khalid, N.; A. Umar, Z.; Hussnain, A.
2013-05-01
A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).
Thin film deposition by electric and magnetic crossed-field diode sputtering. [Patent application
Welch, K.M.
1975-04-04
Applying a coating of titanium nitride to a klystron window by means of a cross-field diode sputtering array is described. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent to a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate, and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thickness. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multifactoring under operating conditions of the components.
Pulsed Laser Deposition Processing of Improved Titanium Nitride Coatings for Implant Applications
NASA Astrophysics Data System (ADS)
Haywood, Talisha M.
Recently surface coating technology has attracted considerable attention of researchers to develop novel coatings with enhanced functional properties such as hardness, biocompatibility, wear and corrosion resistance for medical devices and surgical tools. The materials currently being used for surgical implants include predominantly stainless steel (316L), cobalt chromium (Co-Cr), titanium and its alloys. Some of the limitations of these implants include improper mechanical properties, corrosion resistance, cytotoxicity and bonding with bone. One of the ways to improve the performance and biocompatibility of these implants is to coat their surfaces with biocompatible materials. Among the various coating materials, titanium nitride (TiN) shows excellent mechanical properties, corrosion resistance and low cytotoxicity. In the present work, a systematic study of pulsed laser ablation processing of TiN coatings was conducted. TiN thin film coatings were grown on commercially pure titanium (Ti) and stainless steel (316L) substrates at different substrate temperatures and different nitrogen partial pressures using the pulsed laser deposition (PLD) technique. Microstructural, surface, mechanical, chemical, corrosion and biological analysis techniques were applied to characterize the TiN thin film coatings. The PLD processed TiN thin film coatings showed improvements in mechanical strength, corrosion resistance and biocompatibility when compared to the bare substrates. The enhanced performance properties of the TiN thin film coatings were a result of the changing and varying of the deposition parameters.
Strongly disordered TiN and NbTiN s-wave superconductors probed by microwave electrodynamics.
Driessen, E F C; Coumou, P C J J; Tromp, R R; de Visser, P J; Klapwijk, T M
2012-09-07
We probe the effects of strong disorder (2.4
NASA Astrophysics Data System (ADS)
Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.
2018-05-01
Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.
Thin Refractory Films on Fused Silica Crucibles
1988-07-01
9 4.1.4 Iridium 11 4.1.5 Boron Nitride (BN) 11 4.2 Adherence Testing 13 4.3 Metallography 13 5.0 Conclusions and Recommendations 16 Accession For...Chamber 4 2. Schematic of Crucible Coating Apparatus (SiC, NbN, and TiB 2) 6 3. Schematic of CVD Apparatus for Iridium 7 4. Schematic of Apparatus for...ultrahigh-purity coatings of silicon carbide (SiC), niobium nitride (NbN), titanium diboride (TiB2), iridium , and boron nitride (BN) onto the interior
Duta, Liviu; Stan, George E.; Popa, Adrian C.; Husanu, Marius A.; Moga, Sorin; Socol, Marcela; Zgura, Irina; Miculescu, Florin; Urzica, Iuliana; Popescu, Andrei C.; Mihailescu, Ion N.
2016-01-01
We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN) films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility. PMID:28787846
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bolokang, A.S., E-mail: Sylvester.Bolokang@transnet.net; DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria 0001; Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark 0127
2015-02-15
It is well known that nitriding of titanium is suitable for surface coating of biomaterials and in other applications such as anti-reflective coating, while oxygen-rich titanium oxynitride has been applied in thin film resistors and photocatalysis. Thus in this work anatase was reduced with pure titanium powder during annealing in argon. This was done to avoid any metallic contamination and unwanted residual metal doping. As a result, interesting and different types of particle morphology were synthesized when the pre-milled elemental anatase and titanium powders were mixed. The formation of metastable face centred cubic and monoclinic titanium monoxide was detected bymore » the X-ray diffraction technique. The phases were confirmed by energy dispersive X-ray spectroscopy analysis. Raman analysis revealed weak intensity peaks for samples annealed in argon as compared to those annealed under nitrogen. - Graphical abstract: Display Omitted - Highlights: • Reaction of TiO{sub 2} and Ti induced metastable FCC and monoclinic TiO{sub x}. • Compositions of mixed powder were prepared from the unmilled and pre-milled powders. • Nitridation of TiO{sub x} yielded TiO{sub x}N{sub y} phase. • Mixed morphology was observed on all three powder samples.« less
NASA Astrophysics Data System (ADS)
Qi, F.; Leng, Y. X.; Huang, N.; Bai, B.; Zhang, P. Ch.
2007-04-01
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy
NASA Astrophysics Data System (ADS)
Hidalgo, J. A.; Montero-Ocampo, C.; Cuberes, M. T.
2009-12-01
Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed to softer substoichiometric titanium nitride species and/or trapped subsurface gas. The results show that increasing the sputtering power at the Ti cathode increases the elastic homogeneity of the titanium nitride layers on the nanometer scale. Ultrasonic force microscopy elastic mapping on titanium nitride layers demonstrates the capability of the technique to provide information of high value for the engineering of improved coatings.
Rees, Kelly; Lorusso, Emanuela; Cosham, Samuel D; Kulak, Alexander N; Hyett, Geoffrey
2018-02-14
In this paper we report on a novel chemical vapour deposition approach to the formation and control of composition of mixed anion materials, as applied to titanium oxynitride thin films. The method used is the aerosol assisted chemical vapour deposition (AACVD) of a mixture of single source precursors. To explore the titanium-oxygen-nitrogen system the single source precursors selected were tetrakis(dimethylamido) titanium and titanium tetraisopropoxide which individually are precursors to thin films of titanium nitride and titanium dioxide respectively. However, by combining these precursors in specific ratios in a series of AACVD reactions at 400 °C, we are able to deposit thin films of titanium oxynitride with three different structure types and a wide range of compositions. Using this precursor system we can observe films of nitrogen doped anatase, with 25% anion doping of nitrogen; a new composition of pseudobrookite titanium oxynitride with a composition of Ti 3 O 3.5 N 1.5 , identified as being a UV photocatalyst; and rock-salt titanium oxynitride in the range TiO 0.41 N 0.59 to TiO 0.05 N 0.95 . The films were characterised using GIXRD, WDX and UV-vis spectroscopy, and in the case of the pseudobrookite films, assessed for photocatalytic activity. This work shows that a so-called dual single-source CVD approach is an effective method for the deposition of ternary mixed anion ceramic films through simple control of the ratio of the precursors, while keeping all other experimental parameters constant.
Titanium-nitride-oxide-coated coronary stents: insights from the available evidence.
Karjalainen, Pasi P; Nammas, Wail
2017-06-01
Coating of stent surface with a biocompatible material is suggested to improve stent safety profile. A proprietary process was developed to coat titanium-nitride-oxide on the stent surface, based on plasma technology that uses the nano-synthesis of gas and metal. Preclinical in vitro and in vivo investigation confirmed blood compatibility of titanium (nitride-) oxide films. Titanium-nitride-oxide-coated stents demonstrated a better angiographic outcome, compared with bare-metal stents at mid-term follow-up; however, they failed to achieve non-inferiority for angiographic outcome versus second-generation drug-eluting stents. Observational studies showed adequate clinical outcome at mid-term follow-up. Non-randomized studies showed an outcome of titanium-nitride-oxide-coated stents comparable to - or better than - first-generation drug-eluting stents at long-term follow-up. Two randomized controlled trials demonstrated comparable efficacy outcome, and a better safety outcome of titanium-nitride-oxide-coated stents versus drug-eluting stents at long-term follow-up. Evaluation by optical coherence tomography at mid-term follow-up revealed better neointimal strut coverage associated with titanium-nitride-oxide-coated stents versus drug-eluting stents; yet, neointimal hyperplasia thickness was greater. Key messages Stents coated with titanium-nitride-oxide demonstrated biocompatibility in preclinical studies: they inhibit platelet and fibrin deposition, and reduce neointimal growth. In observational and non-randomized studies, titanium-nitride-oxide-coated stents were associated with adequate safety and efficacy outcome. In randomized trials of patients with acute coronary syndrome, titanium-nitride-oxide-coated stents were associated with a better safety outcome, compared with drug-eluting stents; efficacy outcome was comparable.
Titanium nitride as a seed layer for Heusler compounds
DOE Office of Scientific and Technical Information (OSTI.GOV)
Niesen, Alessia, E-mail: aniesen@physik.uni-bielefeld.de; Glas, Manuel; Ludwig, Jana
Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were depositedmore » on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.« less
Thin-film preparation by back-surface irradiation pulsed laser deposition using metal powder targets
NASA Astrophysics Data System (ADS)
Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Yamauchi, Makiko; Suda, Yoshiaki
2017-01-01
Several kinds of functional thin films were deposited using a new thin-film preparation method named the back-surface irradiation pulsed laser deposition (BIPLD) method. In this BIPLD method, powder targets were used as the film source placed on a transparent target holder, and then a visible-wavelength pulsed laser was irradiated from the holder side to the substrate. Using this new method, titanium oxide and boron nitride thin films were deposited on the silicon substrate. Surface scanning electron microscopy (SEM) images suggest that all of the thin films were deposited on the substrate with some large droplets irrespective of the kind of target used. The deposition rate of the films prepared by using this method was calculated from film thickness and deposition time to be much lower than that of the films prepared by conventional PLD. X-ray diffraction (XRD) measurement results suggest that rutile and anatase TiO2 crystal peaks were formed for the films prepared using the TiO2 rutile powder target. Crystal peaks of hexagonal boron nitride were observed for the films prepared using the boron nitride powder target. The crystallinity of the prepared films was changed by annealing after deposition.
Capability of X-ray diffraction for the study of microstructure of metastable thin films
Rafaja, David; Wüstefeld, Christina; Dopita, Milan; Motylenko, Mykhaylo; Baehtz, Carsten
2014-01-01
Metastable phases are often used to design materials with outstanding properties, which cannot be achieved with thermodynamically stable compounds. In many cases, the metastable phases are employed as precursors for controlled formation of nanocomposites. This contribution shows how the microstructure of crystalline metastable phases and the formation of nanocomposites can be concluded from X-ray diffraction experiments by taking advantage of the high sensitivity of X-ray diffraction to macroscopic and microscopic lattice deformations and to the dependence of the lattice deformations on the crystallographic direction. The lattice deformations were determined from the positions and from the widths of the diffraction lines, the dependence of the lattice deformations on the crystallographic direction from the anisotropy of the line shift and the line broadening. As an example of the metastable system, the supersaturated solid solution of titanium nitride and aluminium nitride was investigated, which was prepared in the form of thin films by using cathodic arc evaporation of titanium and aluminium in a nitrogen atmosphere. The microstructure of the (Ti,Al)N samples under study was tailored by modifying the [Al]/[Ti] ratio in the thin films and the surface mobility of the deposited species. PMID:25485125
Process for making transition metal nitride whiskers
Bamberger, Carlos E.
1989-01-01
A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites.
Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride
Koc, Rasit; Glatzmaier, Gregory C.
1995-01-01
A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.
Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride
Koc, R.; Glatzmaier, G.C.
1995-05-23
A process is disclosed for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tsipas, Sophia A., E-mail: stsipas@ing.uc3m.es; Go
Wear and high temperature oxidation resistance of some titanium-based alloys needs to be enhanced, and this can be effectively accomplished by surface treatment. Molybdenizing is a surface treatment where molybdenum is introduced into the surface of titanium alloys causing the formation of wear-resistant surface layers containing molybdenum, while aluminizing of titanium-based alloys has been reported to improve their high temperature oxidation properties. Whereas pack cementation and other surface modification methods have been used for molybdenizing or aluminizing of wrought and/or cast pure titanium and titanium alloys, such surface treatments have not been reported on titanium alloys produced by powder metallurgymore » (PM). Also a critical understanding of the process parameters for simultaneous one step molybdeno-aluminizing of titanium alloys by pack cementation and the predominant mechanism for this process have not been reported. The current research work describes the surface modification of titanium and Ti-6Al-4V prepared by PM by molybdeno-aluminizing and analyzes thermodynamic aspects of the deposition process. Similar coatings are also deposited to wrought Ti-6Al-4V and compared. Characterization of the coatings was carried out using scanning electron microscopy and x-ray diffraction. For both titanium and Ti-6Al-4V, the use of a powder pack containing ammonium chloride as activator leads to the deposition of molybdenum and aluminium into the surface but also introduces nitrogen causing the formation of a thin titanium nitride layer. In addition, various titanium aluminides and mixed titanium aluminium nitrides are formed. The appropriate conditions for molybdeno-aluminizing as well as the phases expected to be formed were successfully determined by thermodynamic equilibrium calculations. - Highlights: •Simultaneous co-deposition of Mo-Al onto powder metallurgy and wrought Ti alloy •Thermodynamic calculations were used to optimize deposition conditions •External TiN and internal a Mo-rich layer on all alloy substrates •Titanium aluminides and Ti-Al mixed nitrides are formed on Ti-6Al-4V •The presence of Al and V alloying elements modifies the diffusion of Mo.« less
Process for making transition metal nitride whiskers
Bamberger, C.E.
1988-04-12
A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.
Rizzi, Manuela; Gatti, Giorgio; Migliario, Mario; Marchese, Leonardo; Rocchetti, Vincenzo; Renò, Filippo
2014-11-01
Titanium has long been used to produce dental implants. Problems related to its manufacturing, casting, welding, and ceramic application for dental prostheses still limit its use, which highlights the need for technologic improvements. The aim of this in vitro study was to evaluate the biologic performance of titanium dental implants coated with zirconium nitride in a murine preosteoblast cellular model. The purpose of this study was to evaluate the chemical and morphologic characteristics of titanium implants coated with zirconium nitride by means of physical vapor deposition. Chemical and morphologic characterizations were performed by scanning electron microscopy and energy dispersive x-ray spectroscopy, and the bioactivity of the implants was evaluated by cell-counting experiments. Scanning electron microscopy and energy dispersive x-ray spectroscopy analysis found that physical vapor deposition was effective in covering titanium surfaces with zirconium nitride. Murine MC-3T3 preosteoblasts were seeded onto titanium-coated and zirconium nitride-coated screws to evaluate their adhesion and proliferation. These experiments found a significantly higher number of cells adhering and spreading onto zirconium nitride-coated surfaces (P<.05) after 24 hours; after 7 days, both titanium and zirconium nitride surfaces were completely covered with MC-3T3 cells. Analysis of these data indicates that the proposed zirconium nitride coating of titanium implants could make the surface of the titanium more bioactive than uncoated titanium surfaces. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.
Methods of repairing a substrate
NASA Technical Reports Server (NTRS)
Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)
2011-01-01
A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.
NASA Astrophysics Data System (ADS)
Abd El-Rahman, A. M.; Maitz, M. F.; Kassem, M. A.; El-Hossary, F. M.; Prokert, F.; Reuther, H.; Pham, M. T.; Richter, E.
2007-09-01
The present work describes the surface improvement and biocompatibility of TiAl 24Nb 10 intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic alloy is due to formation of a thin modified layer which is composed of titanium nitride in the alloy surface. Moreover, all modified layers were tested for their sustainability as a biocompatible material. Concerning the application area of biocompatibility, the present treated alloy show good surface properties especially for the nitrided alloy at low plasma power of 400 W.
Reactive Spark Plasma Sintering (SPS) of Nitride Reinforced Titanium Alloy Composites (Postprint)
2014-08-15
AFRL-RX-WP-JA-2014-0177 REACTIVE SPARK PLASMA SINTERING (SPS) OF NITRIDE REINFORCED TITANIUM ALLOY COMPOSITES (POSTPRINT) Jaimie S...titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and...lcomReactive spark plasma sintering (SPS) of nitride reinforced titanium alloy compositeshttp://dx.doi.org/10.1016/j.jallcom.2014.08.049 0925-8388
NASA Technical Reports Server (NTRS)
Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)
2009-01-01
A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.
Surface modified stainless steels for PEM fuel cell bipolar plates
Brady, Michael P [Oak Ridge, TN; Wang, Heli [Littleton, CO; Turner, John A [Littleton, CO
2007-07-24
A nitridation treated stainless steel article (such as a bipolar plate for a proton exchange membrane fuel cell) having lower interfacial contact electrical resistance and better corrosion resistance than an untreated stainless steel article is disclosed. The treated stainless steel article has a surface layer including nitrogen-modified chromium-base oxide and precipitates of chromium nitride formed during nitridation wherein oxygen is present in the surface layer at a greater concentration than nitrogen. The surface layer may further include precipitates of titanium nitride and/or aluminum oxide. The surface layer in the treated article is chemically heterogeneous surface rather than a uniform or semi-uniform surface layer exclusively rich in chromium, titanium or aluminum. The precipitates of titanium nitride and/or aluminum oxide are formed by the nitriding treatment wherein titanium and/or aluminum in the stainless steel are segregated to the surface layer in forms that exhibit a low contact resistance and good corrosion resistance.
NASA Technical Reports Server (NTRS)
Gill, A.
1983-01-01
Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.
Osteoblastlike cell adhesion on titanium surfaces modified by plasma nitriding.
da Silva, Jose Sandro Pereira; Amico, Sandro Campos; Rodrigues, Almir Olegario Neves; Barboza, Carlos Augusto Galvao; Alves, Clodomiro; Croci, Alberto Tesconi
2011-01-01
The aim of this study was to evaluate the characteristics of various titanium surfaces modified by cold plasma nitriding in terms of adhesion and proliferation of rat osteoblastlike cells. Samples of grade 2 titanium were subjected to three different surface modification processes: polishing, nitriding by plasma direct current, and nitriding by cathodic cage discharge. To evaluate the effect of the surface treatment on the cellular response, the adhesion and proliferation of osteoblastlike cells (MC3T3) were quantified and the results were analyzed by Kruskal-Wallis and Friedman statistical tests. Cellular morphology was observed by scanning electron microscopy. There was more MC3T3 cell attachment on the rougher surfaces produced by cathodic cage discharge compared with polished samples (P < .05). Plasma nitriding improves titanium surface roughness and wettability, leading to osteoblastlike cell adhesion.
Design of Metastable Tin Titanium Nitride Semiconductor Alloys
Bikowski, Andre; Siol, Sebastian; Gu, Jing; ...
2017-07-07
Here, we report on design of optoelectronic properties in previously unreported metastable tin titanium nitride alloys with spinel crystal structure. Theoretical calculations predict that Ti alloying in metastable Sn 3N 4 compound should improve hole effective mass by up to 1 order of magnitude, while other optical bandgaps remains in the 1–2 eV range up to x ~ 0.35 Ti composition. Experimental synthesis of these metastable alloys is predicted to be challenging due to high required nitrogen chemical potential (Δμ N ≥ +1.0 eV) but proven to be possible using combinatorial cosputtering from metal targets in the presence of nitrogenmore » plasma. Characterization experiments confirm that thin films of such (Sn 1–xTi x) 3N 4 alloys can be synthesized up to x = 0.45 composition, with suitable optical band gaps (1.5–2.0 eV), moderate electron densities (10 17 to 10 18 cm –3), and improved photogenerated hole transport (by 5×). Overall, this study shows that it is possible to design the metastable nitride materials with properties suitable for potential use in solar energy conversion applications.« less
NASA Astrophysics Data System (ADS)
Kirpichev, D. E.; Sinaiskiy, M. A.; Samokhin, A. V.; Alexeev, N. V.
2017-04-01
The possibility of plasmochemical synthesis of titanium nitride is demonstrated in the paper. Results of the thermodynamic analysis of TiCl4 - H2 - N2 system are presented; key parameters of TiN synthesis process are calculated. The influence of parameters of plasma-chemical titanium nitride synthesis process in the reactor with an arc plasmatron on characteristics on the produced powders is experimentally investigated. Structure, chemical composition and morphology dependencies on plasma jet enthalpy, stoichiometric excess of hydrogen and nitrogen in a plasma jet are determined.
Investigation of titanium-nitride layers for solar-cell contacts
NASA Technical Reports Server (NTRS)
Von Seefeld, H.; Cheung, N. W.; Nicolet, M.-A.; Maenpaa, M.
1980-01-01
Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon. Backscattering analysis (2-MeV He/+/, RBS) indicates that the integrity of the system is basically preserved during annealing at 600 C for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (less than 5 at %) a resistivity of 170 microohms/cm has been found.
Low-Temperature Nitriding of Pure Titanium by using Hollow Cathode RF-DC Plasma
NASA Astrophysics Data System (ADS)
Windajanti, J. M.; S, D. J. Djoko H.; Abdurrouf
2017-05-01
Pure titanium is widely used for the structures and mechanical parts due to its high strength, low density, and high corrosion resistance. Unfortunately, titanium products suffer from low hardness and low wear resistance. Titanium’s surface can be modified by nitriding process to overcome such problems, which is commonly conducted at high temperature. Here, we report the low-temperature plasma nitriding process, where pure titanium was utilized by high-density RF-DC plasma combined with hollow cathode device. To this end, a pure titanium plate was set inside a hollow tube placed on the cathode plate. After heating to 450 °C, a pre-sputtering process was conducted for 1 hour to remove the oxide layer and activate the surface for nitriding. Plasma nitriding using N2/H2 gasses was performed in 4 and 8 hours with the RF voltage of 250 V, DC bias of -500 to -600 V, and gas pressure of 75 to 30 Pa. To study the nitriding mechanism as well as the role of hollow cathode, the nitrided specimen was characterized by SEM, EDX, XRD, and micro-hardness equipment. The TiN compound was obtained with the diffusion zone of nitrogen until 5 μm thickness for 4 hours nitriding process, and 8 μm for 8 hours process. The average hardness also increased from 300 HV in the untreated specimen to 624 HV and 792 HV for 4 and 8 hours nitriding, respectively.
NASA Astrophysics Data System (ADS)
Obrezkov, O. I.; Vinogradov, V. P.; Krauz, V. I.; Mozgrin, D. V.; Guseva, I. A.; Andreev, E. S.; Zverev, A. A.; Starostin, A. L.
2016-09-01
Studies of thin film materials (TFM) as coatings of tips of pacemaker electrodes implanted into the human heart have been performed. TFM coatings were deposited in vacuum by arc magnetron discharge plasma, by pulsed discharge of “Plasma Focus”, and by electron beam evaporation. Simulation of electric charge transfer to the heart in physiological blood- imitator solution and determination of electrochemical properties of the coatings were carried out. TFM of highly developed surface of contact with tissue was produced by argon plasma spraying of titanium powder with subsequent coating by titanium nitride in vacuum arc assisted by Ti ion implantation. The TFM coatings of pacemaker electrode have passed necessary clinical tests and were used in medical practice. They provide low voltage myocardium stimulation thresholds within the required operating time.
Application of hard coatings to substrates at low temperatures
NASA Technical Reports Server (NTRS)
Sproul, William D.
1993-01-01
BIRL, the industrial research laboratory of Northwestern University, has conducted unique and innovative research, under sponsorship from the NASA Marshall Space Flight Center (MSFC), in the application of hard, wear resistant coatings to bearing steels using the high-rate reactive sputtering (HRRS) process that was pioneered by Dr. William Sproul, the principal investigator on this program. Prior to this program, Dr. Sproul had demonstrated that it is possible to apply hard coatings such as titanium nitride (TiN) to alloy steels at low temperatures via the HRRS process without changing the metallurgical properties of the steel. The NASA MSFC program at BIRL had the specific objectives to: apply TiN to 440C stainless steel without changing the metallurgical properties of the steel; prepare rolling contact fatigue (RCF) test samples coated with binary hard coatings of TiN, zirconium nitride (ZrN), hafnium nitride (HfN), chromium nitride (CrN), and molybdenum nitride (MoN), and metal coatings of copper (Cu) and gold (Au); and develop new alloyed hard coatings of titanium aluminum nitride (Ti(0.5)Al(0.5)N), titanium zirconium nitride (Ti(0.5)Zr(0.5)N), and titanium aluminum vanadium nitride.
Non-stick syringe needles: Beneficial effects of thin film metallic glass coating
Chu, Jinn P.; Yu, Chia-Chi; Tanatsugu, Yusuke; Yasuzawa, Mikito; Shen, Yu-Lin
2016-01-01
This paper reports on the use of Zr-based (Zr53Cu33Al9Ta5) thin film metallic glass (TFMG) for the coating of syringe needles and compares the results with those obtained using titanium nitride and pure titanium coatings. TFMG coatings were shown to reduce insertion forces by ∼66% and retraction forces by ∼72%, when tested using polyurethane rubber block. The benefits of TFMG-coated needles were also observed when tested using muscle tissue from pigs. In nano-scratch tests, the TFMG coatings achieved a coefficient of friction (COF) of just ∼0.05, which is about one order of magnitude lower than those of other coatings. Finite-element modeling also indicates a significant reduction in injection and retraction forces. The COF can be attributed to the absence of grain boundaries in the TFMG coating as well as a smooth surface morphology and low surface free energy. PMID:27573062
NASA Astrophysics Data System (ADS)
Amosov, A. P.; Markov, Yu M.; Dobrovolskaya, R. A.; Nikolaeva, E. N.
2017-02-01
It is shown that the powder of very hard refractory titanium carbonitride (TiC0.5N0.5) is the basis of tungsten-free hard alloys which are prospective for application as inexpensive cutting tools. The finer the powder of titanium carbonitrideis, the moreenhanced properties of hard alloys, sintered from the powder, are. An opportunity to reduce the particle size of the titanium carbonitride powder obtained by energy-saving azide technology of self-propagating high-temperature synthesis at the cost of reducing the particle size of the initial titanium powderwas investigated. To ensure the safety of the grinding process of the initial metal titanium powder, it was offered to nitride a Ti powder partially into a TiN0.2 compound. Such partial nitriding was performed by the azidetechnology with lack of sodium azide (NaN3) as a nitriding reagent. After intensive grinding in the planetary ball mill, the TiN0.2 powder turned into a superfine powder with an ultrafine structure. This powder was capable of nitriding and carburizing in the azide technology with formation of superfine pure powder agglomerates which are composed of ultrafine and nano-particles of TiC0.5N0.5.
Sacépé, B; Chapelier, C; Baturina, T I; Vinokur, V M; Baklanov, M R; Sanquer, M
2008-10-10
Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap Delta in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature Tc towards zero, enhancement of spatial fluctuations in Delta, and growth of the Delta/Tc ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.
The durability of ceramic coated dental instruments.
Rawlings, R D; Robinson, P B; Rogers, P S
1995-09-01
This study investigates the hardness, structure, composition, and thickness of coatings on two dental instruments and the changes which occurred when the instruments were subjected to conditions that closely match their clinical use. One group of instruments had a titanium nitride coating that was approximately 8 micrometers thick and had a hardness of 19.5 GN/m2. The coating on the other instrument was alumina (aluminium oxide) and contained some microcracks even when new; this coating was thicker (approximately 30 micrometers) and had a hardness less than the titanium nitride coating (15.8 GN/m2). The results showed that the titanium nitride coating was structurally superior compared with the aluminium oxide coating. Laboratory wear tests against composite resin showed that the wear resistance of titanium nitride was superior to that of stainless steel whether assessed in terms of weight or volume loss.
Minchenko, Dmytro O; Tsymbal, D O; Yavorovsky, O P; Solokha, N V; Minchenko, O H
2017-04-25
The aim of the present study was to examine the effect of chromium disilicide and titanium nitride nanoparticles on the expression level of genes encoding important regulatory factors (IGFBP1, IGFBP2, IGFBP3, IGFBP4, IGFBP5, SNARK/NUAK2, CD36, and PECAM1/CD31) in mouse liver for evaluation of possible toxic effects of these nanoparticles. Male mice received 20 mg chromium disilicide nanoparticles (45 nm) and titanium nitride nanoparticles (20 nm) with food every working day for 2 months. The expression of IGFBP1, IGFBP2, IGFBP3, IGFBP4, IGFBP5, SNARK, CD36, and PECAM1 genes in mouse liver was studied by quantitative polymerase chain reaction. Treatment of mice with chromium disilicide nanoparticles led to down-regulation of the expression of IGFBP2, IGFBP5, PECAM1, and SNARK genes in the liver in comparison with control mice, with more prominent changes for SNARK gene. At the same time, the expression of IGFBP3 and CD36 genes was increased in mouse liver upon treatment with chromium disilicide nanoparticles. We have also shown that treatment with titanium nitride nanoparticles resulted in down-regulation of the expression of IGFBP2 and SNARK genes in the liver with more prominent changes for SNARK gene. At the same time, the expression of IGFBP3, IGFBP4, and CD36 genes was increased in the liver of mice treated with titanium nitride nanoparticles. Furthermore, the effect of chromium disilicide nanoparticles on IGFBP2 and CD36 genes expression was significantly stronger as compared to titanium nitride nanoparticles. The results of this study demonstrate that chromium disilicide and titanium nitride nanoparticles have variable effects on the expression of IGFBP2, IGFBP3, IGFBP4, IGFBP5, SNARK, CD36, and PECAM1 genes in mouse liver, which may reflect the genotoxic activities of the studied nanoparticles.
Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films
NASA Astrophysics Data System (ADS)
Chen, Feng
Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.
NASA Astrophysics Data System (ADS)
Glenn, Jason; Fyhrie, Adalyn; Wheeler, Jordan; Day, Peter K.; Eom, Byeong H.; Leduc, Henry G.
2016-07-01
We present the design and characterization of low-volume, lumped-element aluminum kinetic inductance de- tectors for sensitive far-infrared astronomy observations. The lumped-element kinetic inductance detectors are comprised of meandered inductors that serve as radiation absorbers in parallel with interdigitated capacitors, forming high quality factor resonators. Low inductor volumes lead to low noise equivalent powers by raising quasiparticles densities, and hence responsivities, with respect to larger volumes. Low volumes are achieved with thin (20 nm), narrow (150 nm) inductors. The interdigitated capacitor architecture is designed to mitigate two-level system noise by lowering electric fields in the silicon substrate. Resonance frequencies are in the range of 190 to 500 MHz, with measured internal quality factors in excess of 1 x 105. In a prior incarnation, a titanium nitride layer on top of the aluminum served as a protective layer, but complicated the superconducting proper- ties. These results were reported previously. In the current incarnation, the aluminum layer is left bare with no titanium nitride over-layer. The results for these bare aluminum devices include a yield of 88%, frequency responsivity of 109 W-1, and noise equivalent power of 1 x 10-17 W Hz-1/2 for a 350μm array. There is no evidence for 1=f noise down to at least 200 mHz. The sensitivity is currently limited by white noise, very likely from stray light in the testbed; for this detector design, sensitivities limited by generation-recombination noise in a lower-background environment should be several orders of magnitude lower.
Transient Nonlinear Optical Properties of Thin Film Titanium Nitride
2017-03-23
representative of a semiconductor, and their total effect. The effect of carrier heating is shown in light purple. The effect of number of electrons in the...small amount of the excited electrons are heated to a very high temperature. [7] One model for how these hot electrons dissipate energy is called the...two temperature model”. The two temperatures are the temperature of the electron and the temperature of the lattice (or phonon). When heated by an
Viarbitskaya, S; Arocas, J; Heintz, O; Colas-Des-Francs, G; Rusakov, D; Koch, U; Leuthold, J; Markey, L; Dereux, A; Weeber, J-C
2018-04-16
Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ellipsometry experiments. By probing a parametric space of realistic values for parameters of the Drude model, we obtain a nearly univocal dependence of the surface plasmon damping distance on the dc resistivity demonstrating the relevance of dc resistivity for the evaluation of the plasmonic performances of TiN at telecom frequencies. Finally, we show that better plasmonic performances are obtained for TiN films featuring a low content of oxygen. For low oxygen content and corresponding low resistivity, we attribute the increase of the surface plasmon damping distances to a lower confinement of the plasmon field into the metal and not to a decrease of the absorption of TiN.
NASA Astrophysics Data System (ADS)
Zhang, Baosen; Dong, Qiangsheng; Ba, Zhixin; Wang, Zhangzhong; Shi, Hancheng; Xue, Yanting
2018-01-01
Plasma nitriding was conducted as post-treatment for surface texture on pure titanium to obtain a continuous nitriding layer. Supersonic fine particles bombarding (SFPB) was carried out to prepare surface texture. The surface morphologies and chemical composition were analyzed using scanning electron microscope and energy disperse spectroscopy. The microstructures of modified layers were characterized by transmission electron microscope. The tribological properties of surface-textured and duplex-treated pure titanium under oil lubrication condition were systematically investigated in the ball-on-plate reciprocating mode. The effects of applied load and sliding velocity on the tribological behavior were analyzed. The results show that after duplex treatments, the grains size in modified layer becomes slightly larger, and hardness is obviously improved. Wear resistance of duplex-treated pure titanium is significantly improved referenced to untreated and surface-textured pure titanium, which is 3.22 times as much as untreated pure titanium and 2.15 times of that for surface-textured pure titanium, respectively.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less
2012-08-01
AFRL-RX-WP-TP-2012-0372 FORMATION OF EQUIAXED ALPHA AND TITANIUM NITRIDE PRECIPITATES IN SPARK PLASMA SINTERED TiB/Ti-6Al-4V COMPOSITES...ALPHA AND TITANIUM NITRIDE PRECIPITATES IN SPARK PLASMA SINTERED TiB/Ti-6Al-4V COMPOSITES (PREPRINT) 5a. CONTRACT NUMBER FA8650-08-C-5226 5b...distribution of TiN precipitates, as revealed by TEM studies. 15. SUBJECT TERMS Ti-6Al-4V; TiB; TiN; Spark Plasma Sintering ; Composite; α/β phase
Reaction layer characterization of the braze joint of silicon nitride to stainless steel
NASA Astrophysics Data System (ADS)
Xu, R.; Indacochea, J. E.
1994-10-01
This investigation studies the role of titanium in the development of the reaction layer in braze joining silicon nitride to stainless steel using titanium-active copper-silver filler metals. This reaction layer formed as a result of titanium diffusing to the filler metal/silicon nitride interface and reacting with the silicon nitride to form the intermetallics, titanium nitride (TiN) and titanium suicide (Ti 5Si3). This reaction layer, as recognized in the literature, allows wetting of the ceramic substrate by the molten filler metal. The reaction layer thickness increases with temperature and time. Its growth rate obeys the parabolic relationship. Activation energies of 220.1 and 210.9 kj/mol were calculated for growth of the reaction layer for the two filler metals used. These values are close to the activation energy of nitrogen in TiN (217.6 kj/mol). Two filler metals were used in this study, Ticusil (68.8 wt% Ag, 26.7 wt% Cu, 4.5 wt% Ti) and CB4 (70.5 wt% Ag, 26.5 wt% Cu, 3.0 wt% Ti). The joints were processed in vacuum at temperatures of 840 to 900 °C at various times. Bonding strength is affected by reaction layer thickness in the absence of Ti-Cu intermetallics in the filler metal matrix.
Extraction of titanium from low-iron nitrided Malaysian ilmenite by chlorination
NASA Astrophysics Data System (ADS)
Ibrahim, Najwa; Ahmadi, Eltefat; Rahman, Shaik Abdul; Fauzi, M. N. Ahmad; Rezan, Sheikh Abdul
2017-01-01
In this paper, production of TiCl4 from low-iron nitrided ilmenite samples at relatively low temperature using chlorine gas generated from the reaction between KMnO4 and HCl has been investigated. The effects of chlorination soaking time, potassium permanganate (KMnO4) to hydrochloric acid (HCl) molar ratio and aluminium powder catalyst in chlorine gas generation on titanium extraction from nitrided Malaysian ilmenite were examined. The low-iron nitrided Malaysian ilmenite contained titanium oxycarbonitride (TiOxCyNz) after carbothermal reduction and nitridation with subsequent leaching. Chlorination process was performed at 500°C for 30 - 60 minutes. Statistical analysis of the data was done by Design of Experiment (DOE) to identify the significant variables and their interactions. The results achieved in this study showed that the highest extent of chlorination was about 98.34% at 500°C for 60 minutes. The lowest extent of chlorination was about 68.51% obtained in KMnO4 to HCl molar ratio of 2.0 and 0.35 g of aluminium powder. The chlorinated titanium oxycarbonitride powders and TiCl4 solutions were analyzed by X-ray diffraction (XRD) and inductively coupled plasma-optical emission spectroscopy (ICP-OES), respectively. The purpose of this study was to explore the relationship between the processing parameters on extracting titanium via pyrometallurgical technique.
Core-shell titanium dioxide-titanium nitride nanotube arrays with near-infrared plasmon resonances
NASA Astrophysics Data System (ADS)
Farsinezhad, Samira; Shanavas, Thariq; Mahdi, Najia; Askar, Abdelrahman M.; Kar, Piyush; Sharma, Himani; Shankar, Karthik
2018-04-01
Titanium nitride (TiN) is a ceramic with high electrical conductivity which in nanoparticle form, exhibits localized surface plasmon resonances (LSPRs) in the visible region of the solar spectrum. The ceramic nature of TiN coupled with its dielectric loss factor being comparable to that of gold, render it attractive for CMOS polarizers, refractory plasmonics, surface-enhanced Raman scattering and a whole host of sensing applications. We report core-shell TiO2-TiN nanotube arrays exhibiting LSPR peaks in the range 775-830 nm achieved by a simple, solution-based, low cost, large area-compatible fabrication route that does not involve laser-writing or lithography. Self-organized, highly ordered TiO2 nanotube arrays were grown by electrochemical anodization of Ti thin films on fluorine-doped tin oxide-coated glass substrates and then conformally coated with a thin layer of TiN using atomic layer deposition. The effects of varying the TiN layer thickness and thermal annealing on the LSPR profiles were also investigated. Modeling the TiO2-TiN core-shell nanotube structure using two different approaches, one employing effective medium approximations coupled with Fresnel coefficients, resulted in calculated optical spectra that closely matched the experimentally measured spectra. Modeling provided the insight that the observed near-infrared resonance was not collective in nature, and was mainly attributable to the longitudinal resonance of annular nanotube-like TiN particles redshifted due to the presence of the higher permittivity TiO2 matrix. The resulting TiO2-TiN core-shell nanotube structures also function as visible light responsive photocatalysts, as evidenced by their photoelectrochemical water-splitting performance under light emitting diode illumination using 400, 430 and 500 nm photons.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Samal, Nigamananda; Du Hui; Luberoff, Russell
Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for themore » DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Michelic, S.K., E-mail: susanne.michelic@unileoben.ac.at; Loder, D.; Reip, T.
2015-02-15
Titanium-alloyed ferritic chromium steels are a competitive option to classical austenitic stainless steels owing to their similar corrosion resistance. The addition of titanium significantly influences their final steel cleanliness. The present contribution focuses on the detailed metallographic characterization of titanium nitrides, titanium carbides and titanium carbonitrides with regard to their size, morphology and composition. The methods used are manual and automated Scanning Electron Microscopy with Energy Dispersive X-ray Spectroscopy as well as optical microscopy. Additional thermodynamic calculations are performed to explain the precipitation procedure of the analyzed titanium nitrides. The analyses showed that homogeneous nucleation is decisive at an earlymore » process stage after the addition of titanium. Heterogeneous nucleation gets crucial with ongoing process time and essentially influences the final inclusion size of titanium nitrides. A detailed investigation of the nuclei for heterogeneous nucleation with automated Scanning Electron Microscopy proved to be difficult due to their small size. Manual Scanning Electron Microscopy and optical microscopy have to be applied. Furthermore, it was found that during solidification an additional layer around an existing titanium nitride can be formed which changes the final inclusion morphology significantly. These layers are also characterized in detail. Based on these different inclusion morphologies, in combination with thermodynamic results, tendencies regarding the formation and modification time of titanium containing inclusions in ferritic chromium steels are derived. - Graphical abstract: Display Omitted - Highlights: • The formation and modification of TiN in the steel 1.4520 was examined. • Heterogeneous nucleation essentially influences the final steel cleanliness. • In most cases heterogeneous nuclei in TiN inclusions are magnesium based. • Particle morphology provides important information on inclusion formation.« less
Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying
NASA Astrophysics Data System (ADS)
Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş
2011-01-01
Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.
Semiconducting cubic titanium nitride in the Th 3 P 4 structure
Bhadram, Venkata S.; Liu, Hanyu; Xu, Enshi; ...
2018-01-22
We report the discovery of a long-sought-after phase of titanium nitride with stoichiometry Ti3N4 using diamond anvil cell experiments combined with in situ high-resolution x-ray diffraction and Raman spectroscopy techniques, supported by ab initio calculations.
Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition
DOE Office of Scientific and Technical Information (OSTI.GOV)
Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki
2016-01-15
This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient methodmore » to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.« less
NASA Astrophysics Data System (ADS)
Parali, Levent; Kurbanov, Mirza A.; Bayramov, Azad A.; Tatardar, Farida N.; Sultanakhmedova, Ramazanova I.; Xanlar, Huseynova Gulnara
2015-11-01
High-density polymer composites with semiconductor or dielectric fillers such as aluminum nitride (AIN), aluminum oxide (Al2O3), titanium carbide (TiC), titanium nitride (TiN), boron nitride (BN), silicon nitride (Si3N4), and titanium carbonitride (TiCN) were prepared by the hot pressing method. Each powder phase of the composites was exposed to an electric discharge plasma process before composite formation. The effects of the electric discharge plasma process and the filler content (volume fraction) on the thermal conductivity, volt-ampere characteristics, thermally stimulated depolarization current, as well as electrical and mechanical strength were investigated. The results of the study indicate that, with increasing filler volume fraction, the thermal conductivity of the samples also increased. Furthermore, the thermal conductivity, and electrophysical and mechanical properties of the high-density polyethylene + 70% BN composite modified using the electric discharge plasma showed improvement when compared with that without electric discharge plasma treatment.
NASA Astrophysics Data System (ADS)
Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.
2002-11-01
In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.
Er, Nilay; Alkan, Alper; Ilday, Serim; Bengu, Erman
2018-06-01
The dental implant drilling procedure is an essential step for implant surgery, and frictional heat in bone during drilling is a key factor affecting the success of an implant. The aim of this study was to increase the dental implant drill lifetime and performance by using heat- and wear-resistant protective coatings to decrease the alveolar bone temperature caused by the dental implant drilling procedure. Commercially obtained stainless steel drills were coated with titanium aluminum nitride, diamond-like carbon, titanium boron nitride, and boron nitride coatings via magnetron-sputter deposition. Drilling was performed on bovine femoral cortical bone under the conditions mimicking clinical practice. Tests were performed under water-assisted cooling and under the conditions when no cooling was applied. Coated drill performances and durabilities were compared with those of three commonly used commercial drills with surfaces made from zirconia, black diamond. and stainless steel. Protective coatings with boron nitride, titanium boron nitride, and diamond-like carbon have significantly improved drill performance and durability. In particular, boron nitride-coated drills have performed within safe bone temperature limits for 50 drillings even when no cooling is applied. Titanium aluminium nitride coated drills did not show any improvement over commercially obtained stainless steel drills. Surface modification using heat- and wear-resistant coatings is an easy and highly effective way to improve implant drill performance and durability, which can improve the surgical procedure and the postsurgical healing period. The noteworthy success of different types of coatings is novel and likely to be applicable to various other medical systems.
NASA Astrophysics Data System (ADS)
Mashovets, N. S.; Pastukh, I. M.; Voloshko, S. M.
2017-01-01
X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples' argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm2. The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. In addition, changing the technological mode allows you to manage a wide range of modified phase composition of the surface layer and as a result - to form the surface of titanium parts, taking into account the conditions of the subsequent operation.
Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei
2011-08-01
In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.
A new method for production of titanium vapor and synthesis of titanium nitride coatings
NASA Astrophysics Data System (ADS)
Grigoriev, Sergey N.; Melnik, Yury A.; Metel, Alexander S.; Volosova, Marina A.
2018-03-01
It is proposed to synthesize on machine parts and cutting tools wear-resistant titanium nitride coatings with the help of the hollow-cathode glow discharge, a molybdenum crucible for titanium evaporation being used as the anode of the discharge and a process vacuum chamber being used as the hollow cathode. The research revealed that at the anode surface area less than a critical value S* = (2m/M)1/2S, where S is the area of the chamber walls, m is the mass of electrons and M is the mass of ions, the anode fall of potential is positive and grows from ˜50 V at argon pressure p = 0.2 Pa to ˜2 kV at p = 0.02 Pa. At the discharge current I = 0.6 A electrons accelerated by the anode fall of 0.9 kV transport into the crucible with the inner diameter of 12 mm the power of ˜0.54 kW, which allows the titanium evaporation and the coating deposition rate of 5 µm·h-1 on a substrate distanced from the crucible at 100 mm. After the argon is replaced with the nitrogen, titanium nitride coating without titanium droplets is synthesized the deposition rate amounting to about the same value.
Surface characterization of nickel titanium orthodontic arch wires
Krishnan, Manu; Seema, Saraswathy; Tiwari, Brijesh; Sharma, Himanshu S.; Londhe, Sanjay; Arora, Vimal
2015-01-01
Background Surface roughness of nickel titanium orthodontic arch wires poses several clinical challenges. Surface modification with aesthetic/metallic/non metallic materials is therefore a recent innovation, with clinical efficacy yet to be comprehensively evaluated. Methods One conventional and five types of surface modified nickel titanium arch wires were surface characterized with scanning electron microscopy, energy dispersive analysis, Raman spectroscopy, Atomic force microscopy and 3D profilometry. Root mean square roughness values were analyzed by one way analysis of variance and post hoc Duncan's multiple range tests. Results Study groups demonstrated considerable reduction in roughness values from conventional in a material specific pattern: Group I; conventional (578.56 nm) > Group V; Teflon (365.33 nm) > Group III; nitride (301.51 nm) > Group VI (i); rhodium (290.64 nm) > Group VI (ii); silver (252.22 nm) > Group IV; titanium (229.51 nm) > Group II; resin (158.60 nm). It also showed the defects with aesthetic (resin/Teflon) and nitride surfaces and smooth topography achieved with metals; titanium/silver/rhodium. Conclusions Resin, Teflon, titanium, silver, rhodium and nitrides were effective in decreasing surface roughness of nickel titanium arch wires albeit; certain flaws. Findings have clinical implications, considering their potential in lessening biofilm adhesion, reducing friction, improving corrosion resistance and preventing nickel leach and allergic reactions. PMID:26843749
Composite Reinforcement using Boron Nitride Nanotubes
2014-05-09
while retaining the nanotube structure. This project involves the use of computational quantum chemistry to study interactions of aluminium (Al...small clusters of 1–4 metal atoms. The effect of varying the radius of the nanotubes and the size of aluminium and titanium clusters was considered...15. SUBJECT TERMS Boron Nitride Nanotubes, composite materials, Aluminum Alloys , Titanium Alloy , Theoretical Chemistry 16. SECURITY
NASA Astrophysics Data System (ADS)
Nupangtha, W.; Boonyawan, D.
2017-09-01
Titanium nitride (TiN) coatings have been used very successfully in a variety of applications because of their excellent properties, such as the high hardness meaning good wear resistance and also used for covering medical implants. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. This paper aims to explain how to optimize deposition conditions for films synthesis on PEEK by varying sputtering parameters such as nitrogen flow rate and direction, deposition time, d-s (target-to-substrate distance) and 13.56 MHz RF power. The plasma conditions used to deposit films were monitored by the optical emission spectroscopy (OES). Titanium nitride/Hydroxyapatite composite films were performed by gas mixture with nitrogen and argon ratio of 1:3 and target-to-substrate distance at 8 cm. The gold colour, as-deposited film was found on PEEK with high hardness and higher surface energy than uncoated PEEK. X-ray diffraction characterization study was carried to study the crystal structural properties of these composites.
Sun, Mingxuan; Fang, Yalin; Kong, Yuanyuan; Sun, Shanfu; Yu, Zhishui; Umar, Ahmad
2016-08-09
Herein, we report the successful formation of graphitic carbon nitride coated titanium oxide nanotube array thin films (g-C3N4/TiO2) via the facile thermal treatment of anodized Ti sheets over melamine. The proportion of C3N4 and TiO2 in the composite can be adjusted by changing the initial addition mass of melamine. The as-prepared samples are characterized by several techniques in order to understand the morphological, structural, compositional and optical properties. UV-vis absorption studies exhibit a remarkable red shift for the g-C3N4/TiO2 thin films as compared to the pristine TiO2 nanotubes. Importantly, the prepared composites exhibit an enhanced photocurrent and photo-potential under both UV-vis and visible light irradiation. Moreover, the observed maximum photo-conversion efficiency of the prepared composites is 1.59 times higher than that of the pristine TiO2 nanotubes. The optical and electrochemical impedance spectra analysis reveals that the better photo-electrochemical performance of the g-C3N4/TiO2 nanotubes is mainly due to the wider light absorption and reduced impedance compared to the bare TiO2 nanotube electrode. The presented work demonstrates a facile and simple method to fabricate g-C3N4/TiO2 nanotubes and clearly revealed that the introduction of g-C3N4 is a new and innovative approach to improve the photocurrent and photo-potential efficiencies of TiO2.
Chun, Sung-Yong
2013-03-01
Titanium nitride films used as an important electrode material for the design of alkali metal thermal-to-electric conversion (AMTEC) system have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of titanium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that titanium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bellakhal, N
2002-12-01
The exposure of a titanium sample to an NH{sub 3} low pressure plasma leads to the formation of a nitriding layer. The products formed at the titanium surface were identified by XRD spectroscopy. The modification of the corrosion resistance characteristics of titanium due to the NH{sub 3} plasma treatment were investigated by electrochemical tests. The recorded polarization curves of the treated titanium samples were used to determine the values of the corrosion potential E{sub corr}. This study confirms the increasing of the corrosion resistance as a function of the time exposure and the injected electric power in the silica reactor.more » The plasma treatment also induces drastic changes of the titanium target in hardness.« less
Process for preparing titanium nitride powder
Bamberger, C.E.
1988-06-17
A process for making titanium nitride powder by reaction of titanium phosphates with sodium cyanide. The process of this invention may comprise mixing one or more phosphates of Ti with a cyanide salt in the absence of oxygen and heating to a temperature sufficient to cause reaction to occur. In the preferred embodiment the ratio of cyanide salt to Ti should be at least 2 which results in the major Ti-containing product being TiN rather than sodium titanium phosphate byproducts. The process is an improvement over prior processes since the byproducts are water soluble salts of sodium which can easily be removed from the preferred TiN product by washing. 2 tabs.
NASA Astrophysics Data System (ADS)
Vautherin, B.; Planche, M.-P.; Quet, A.; Bianchi, L.; Montavon, G.
2014-11-01
Very Low Pressure Plasma Spraying (VLPPS) is an emerging spray process nowadays intensively studied by many research centers in the World. To date, studies are mostly focused on the manufacturing of ceramic or metallic coatings. None refers to composite coatings manufacturing by reactive plasma spraying under very low pressure (i.e., ~150 Pa). This paper aims at presenting the carried-out developments and some results concerning the manufacturing of composite coatings by reactive spraying. Titanium was selected as metallic material in order to deposit titanium-nitride titanium coatings (Ti-TiN). Nitrogen was used as plasma gas and was injected along an Ar-H2-N2 plasma jet via a secondary injector in order to reach the nitrogen content on the substrate surface. Thus, different kind of reactive mechanisms were highlighted. Resulting coatings were characterized by Scanning Electron Microscopy (SEM) observations. Porous microstructures are clearly identified and the deposits exhibit condensed vapours and molten particles. Glow Discharge Optical Emission Spectroscopy (GDOES) analysis evidenced nitrogen inside the deposits and X-Ray Diffraction (XRD) analysis confirmed the formation of titanium nitride phases, such as TiN and Ti2N, depending upon the location of the nitrogen injection. Microhardness values as high as 800 VHN were measured on manufactured samples (to be compared to 220 VHN for pure titanium VLPPS-manufactured coatings).
FORMING PROTECTIVE FILMS ON METAL
Gurinsky, D.H.; Kammerer, O.F.; Sadofsky, J.; Weeks, J.R.
1958-12-16
Methods are described of inhibiting the corrosion of ferrous metal by contact with heavy liquid metals such as bismuth and gallium at temperatures above 500 icient laborato C generally by bringing nltrogen and either the metal zirconium, hafnium, or titanium into reactlve contact with the ferrous metal to form a thin adherent layer of the nitride of the metal and thereafter maintaining a fractional percentage of the metal absorbed in the heavy liquid metal in contact with the ferrous metal container. The general purpose for uslng such high boiling liquid metals in ferrous contalners would be as heat transfer agents in liquid-metal-fueled nuclear reactors.
NASA Astrophysics Data System (ADS)
Orsi, A.; Kongstein, O. E.; Hamilton, P. J.; Oedegaard, A.; Svenum, I. H.; Cooke, K.
2015-07-01
Stainless steel bipolar plates (BPP) for polymer electrolyte membrane fuel cells (PEMFCs) have good manufacturability, durability and low costs, but inadequate corrosion resistance and elevated interfacial contact resistance (ICR) in the fuel cell environment. Thin film coatings of titanium nitride (TiN) of 1 μm in thickness, were deposited by means of physical vapour deposition (PVD) process on to stainless steel (SS) 316L substrates and were evaluated, in a series of tests, for their level of corrosion protection and ICR. In the ex-situ corrosion tests, variables such as applied potential, experimental duration and pH of the sulphate electrolyte at 80 °C were altered. The ICR values were found to increase after exposure to greater applied potentials and electrolytes of a higher pH. In terms of experimental duration, the ICR increased most rapidly at the beginning of each experiment. It was also found that the oxidation of TiN was accelerated after exposure to electrolytes of a higher pH. When coated BPPs were incorporated into an accelerated fuel cell test, the degradation of the fuel cell cathode resembled the plates that were tested at the highest anodic potential (1.4 VSHE).
Corrosion resistant PEM fuel cell
Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen Joel; Doll, Gary Lynn
2001-07-17
The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.
Corrosion resistant PEM fuel cell
Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen Joel; Doll, Gary Lynn
2002-01-01
The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.
Corrosion resistant PEM fuel cell
Li, Yang; Meng, Wen-Jin; Swathirajan, Swathy; Harris, Stephen J.; Doll, Gary L.
1997-01-01
The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell's operating environment. Stainless steels rich in CR, Ni, and Mo are particularly effective protective interlayers.
Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena
2017-03-01
Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.
Larsson Wexell, C.; Thomsen, P.; Aronsson, B.-O.; Tengvall, P.; Rodahl, M.; Lausmaa, J.; Kasemo, B.; Ericson, L. E.
2013-01-01
In a series of experimental studies, the bone formation around systematically modified titanium implants is analyzed. In the present study, three different surface modifications were prepared and evaluated. Glow-discharge cleaning and oxidizing resulted in a highly stoichiometric TiO2 surface, while a glow-discharge treatment in nitrogen gas resulted in implants with essentially a surface of titanium nitride, covered with a very thin titanium oxide. Finally, hydrogen peroxide treatment of implants resulted in an almost stoichiometric TiO2, rich in hydroxyl groups on the surface. Machined commercially pure titanium implants served as controls. Scanning Auger Electron Spectroscopy, Scanning Electron Microscopy, and Atomic Force Microscopy revealed no significant differences in oxide thickness or surface roughness parameters, but differences in the surface chemical composition and apparent topography were observed. After surface preparation, the implants were inserted in cortical bone of rabbits and evaluated after 1, 3, and 6 weeks. Light microscopic evaluation of the tissue response showed that all implants were in contact with bone and had a large proportion of newly formed bone within the threads after 6 weeks. There were no morphological differences between the four groups. Our study shows that a high degree of bone contact and bone formation can be achieved with titanium implants of different surface composition and topography. PMID:24174936
Conducting metal oxide and metal nitride nanoparticles
DOE Office of Scientific and Technical Information (OSTI.GOV)
DiSalvo, Jr., Francis J.; Subban, Chinmayee V.
Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst supportmore » in a fuel cell.« less
Development and production integration of a planarized AlCu interconnect process for submicron CMOS
NASA Astrophysics Data System (ADS)
Brown, Kevin C.; Hill, Rodney; Reddy, Krishna; Gadepally, Kamesh
1995-09-01
A planarized aluminum alloy interconnect has been developed as an alternative to tungsten plugs for a 0.65 (mu) CMOS technology. Contact resistance can increase with either an inadequate RF sputter clean or titanium that is too thin to reduce the native oxide. Diffusion barrier results show that a minimum amount of titanium nitride, whether deposited conventionally or with collimation, is necessary for low junction leakage and good sort yield. Stacked contacts and vias are supported while via resistance and defect density are improved. Electrical bridging due to silicon residues from AlSiCu can be minimized with metal overetching, but not to the extent of AlCu. Sidewall pitting was observed to be due to galvanic corrosion from copper precipitate formation. Overall yield has been improved along with decreased wafer cost compared to conventional tungsten plug technology.
Hard and low friction nitride coatings and methods for forming the same
Erdemir, Ali; Urgen, Mustafa; Cakir, Ali Fuat; Eryilmaz, Osman Levent; Kazmanli, Kursat; Keles, Ozgul
2007-05-01
An improved coating material possessing super-hard and low friction properties and a method for forming the same. The improved coating material includes the use of a noble metal or soft metal homogeneously distributed within a hard nitride material. The addition of small amounts of such metals into nitrides such as molybdenum nitride, titanium nitride, and chromium nitride results in as much as increasing of the hardness of the material as well as decreasing the friction coefficient and increasing the oxidation resistance.
Research and Development for Continued Performance Improvement in Flexible a-Si PV
2010-12-14
accomplished, however, at low temperatures silicides tend to form on the surface of the filament, which affected filament lifetime and deposition rate...considered. Titanium Nitride, sputtered As an alternative to the hot wire deposition of silicon, samples were prepared with various thicknesses of...Silicon 21 Insitu DC Sputtering Titanium Nitride 22 Metal Machine 2 ឈ> RF Oxygen Plasma Silicon Dioxide 20. Oxygen Etch Table A.4.1 Open circuit
Corrosion resistant PEM fuel cell
Li, Y.; Meng, W.J.; Swathirajan, S.; Harris, S.J.; Doll, G.L.
1997-04-29
The present invention contemplates a PEM fuel cell having electrical contact elements (including bipolar plates/septums) comprising a titanium nitride coated light weight metal (e.g., Al or Ti) core, having a passivating, protective metal layer intermediate the core and the titanium nitride. The protective layer forms a barrier to further oxidation/corrosion when exposed to the fuel cell`s operating environment. Stainless steels rich in Cr, Ni, and Mo are particularly effective protective interlayers. 6 figs.
Label-free surface plasmon resonance biosensing with titanium nitride thin film.
Qiu, Guangyu; Ng, Siu Pang; Wu, Chi-Man Lawrence
2018-05-30
In this report, titanium nitride thin film synthesized with reactive magneto-sputtering technique is proposed as an alternative surface plasmon resonance sensing material. The physical and chemical natures were initially studied by atomic force microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. In virtue of white-light common-path sensing system, the wavelength modulated TiN films achieved tunable evanescent plasmonic field from 573 nm to 627 nm. The optimized TiN film with 29.8 nm thickness exhibited good differential phase sensitivity (i.e. 1.932 × 10 -7 RIU) to refractive index alteration, which is comparable to the performance of gold film. We have also attained direct measurement of biotin adsorption on the TiN and monitored sub-sequential biotin-streptavidin conjugation. It was found that TiN films have significantly higher binding affinity toward biotin than that of gold in experiments, so we are able to detect biotin directly to 0.22 µg/ml (0.90 µM) in label-free manner. The adsorption mechanism of biotin on TiN(200) are also explored with periodic density functional theory (DFT) via computer simulation and it was found that the exceptional biotin-TiN affinity may be due to the stacking formation of both N-Ti and O-Ti bonds. Also, the adsorption energy of biotin-TiN was found to be - 1.85 eV, which was two times higher than that of biotin-gold. Both experimental and computational results indicate, for the first time, that the TiN film can be directly functionalized with biotin molecules, thus it serves as an alternative plasmonic material to existing gold-based SPR biosensors. Copyright © 2018 Elsevier B.V. All rights reserved.
Brow, Richard K.; Watkins, Randall D.
1995-07-04
Titanium is prenitrided by being heated in a nitrogen environment under conditions which give rise to the formation of a titanium-nitride surface layer on the titanium. Titanium thus prenitrided may be used in electrical components which are hermetically sealed using silicate glasses and standard glass sealing techniques. According to the method of the invention, alkali volatilization and formation of deleterious interfacial silicide are inhibited.
Brow, Richard K.; Watkins, Randall D.
1995-01-01
Titanium is prenitrided by being heated in a nitrogen environment under conditions which give rise to the formation of a titanium-nitride surface layer on the titanium. Titanium thus prenitrided may be used in electrical components which are hermetically sealed using silicate glasses and standard glass sealing techniques. According to the method of the invention, alkali volatilization and formation of deleterious interfacial silicide are inhibited.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Borkar, Tushar; Nag, Soumya; Ren, Yang
Coupled in situ alloying and nitridation of titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and vanadium elemental powders, leading to a new class of nitride reinforced titanium alloy composites. The resulting microstructure includes precipitates of the d-TiN phase with the NaCl structure, equiaxed (or globular) precipitates of a nitrogen enriched hcp a(Ti,N) phase with a c/a ratio more than what is expected for pure hcp Ti, and fine scale plate-shaped precipitates of hcp a-Ti, distributed within a bcc b matrix. During SPS processing, the d-TiN phase appears tomore » form at a temperature of 1400 C, while only hcp a(Ti,N) and a-Ti phases form at lower processing temperatures. Consequently, the highest microhardness is exhibited by the composite processed at 1400 C while those processed at 1300 C or below exhibit lower values. Processing at temperatures below 1300 C, resulted in an incomplete alloying of the blend of titanium and vanadium powders. These d-TiN precipitates act as heterogeneous nucleation sites for the a(Ti,N) precipitates that appear to engulf and exhibit an orientation relationship with the nitride phase at the center. Furthermore, fine scale a-Ti plates are precipitated within the nitride precipitates, presumably resulting from the retrograde solubility of nitrogen in titanium.« less
Lee, Eun Joo; Lee, Lanlee; Abbas, Muhammad Awais; Bang, Jin Ho
2017-08-09
A recent surge of interest in metal (oxy)nitride materials for energy storage devices has given rise to the rapid development of various nanostructuring strategies for these materials. In supercapacitor applications, early transition metal (oxy)nitrides have been extensively explored, among which titanium oxynitride stands out due to its great potential for charge storage. Despite recent advances in supercapacitors based on titanium oxynitride, many underlying factors governing their capacitive performance remain elusive. In this work, nanostructured titanium oxynitride is prepared by firing an organic-inorganic hybrid precursor under a hot ammonia atmosphere, and the influence of its physical characteristics on the supercapacitor performance is investigated. New insights into the effects of surface area, porous structure, and surface state of titanium oxynitride on the supercapacitor performance are revealed through which a comprehensive understanding about the capacitive behavior of titanium oxynitride is provided. In addition, the implications of these insights for a nanostructuring strategy striving for higher capacitance and improved stability are discussed.
Magnetoresistance measurements of superconducting molybdenum nitride thin films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Baskaran, R., E-mail: baskaran@igcar.gov.in; Arasu, A. V. Thanikai; Amaladass, E. P.
2016-05-23
Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.
Preload evaluation of different screws in external hexagon joint.
Assunção, Wirley Gonçalves; Delben, Juliana Aparecida; Tabata, Lucas Fernando; Barão, Valentim Adelino Ricardo; Gomes, Erica Alves; Garcia, Idelmo Rangel
2012-02-01
This study compared the maintenance of tightening torque in different retention screw types of implant-supported crowns. Twelve metallic crowns in UCLA abutments cast with cobalt-chromium alloy were attached to external hexagon osseointegrated implants with different retention screws: group A: titanium alloy retention screw; group B: gold alloy retention screw with gold coating; group C: titanium alloy retention screw with diamond-like carbon film coating; and group D: titanium alloy retention screw with aluminum titanium nitride coating. Three detorque measurements were obtained after torque insertion in each replica. Data were evaluated by analysis of variance (ANOVA), Tukey's test (P < 0.05), and t test (P < 0.05). Detorque value reduced in all groups (P < 0.05). Group A retained the highest percentage of torque in comparison with the other groups (P < 0.05). Groups B and D retained the lowest percentage of torque without statistically significant difference between them (P > 0.05). All screw types exhibited reduction in the detorque value. The titanium screw maintained the highest percentage of torque whereas the gold-coated screw and the titanium screw with aluminum titanium nitride coating retained the lowest percentage.
2015-11-18
thickness of the film, or substrate. In this work, we report calculations for titanium nitride ( TiN ), a promising material for plasmonic applications...stoichiometric bulk TiN , as well as of the TiN (100), TiN (110), and TiN (111) outermost surfaces. Density functional theory (DFT) and many-body GW methods...and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity
Titanium nitride formation by a dual-stage femtosecond laser process
NASA Astrophysics Data System (ADS)
Hammouti, S.; Holybee, B.; Zhu, W.; Allain, J. P.; Jurczyk, B.; Ruzic, D. N.
2018-06-01
Formation of TiN by femtosecond laser processing in controlled gas atmosphere is reported. A dual-stage process was designed and aimed to first remove and restructure the native oxide layer of titanium surface through laser irradiation under an argon-controlled atmosphere, and then to maximize titanium nitride formation through an irradiation under a nitrogen reactive environment. An extensive XPS study was performed to identify and quantify laser-induced titanium surface chemistry modifications after a single-stage laser process (Ar and N2 individually), and a dual-stage laser process. The importance of each step that composes the dual-stage laser process was demonstrated and leads to the dual-stage laser process for the formation of TiO, Ti2O3 and TiN. In this study, the largest nitride formation occurs for the dual stage process with laser conditions at 4 W/1.3 J cm-2 under argon and 5 W/1.6 J cm-2 under nitrogen, yielding a total TiN composition of 8.9%. Characterization of both single-stage and dual-stage laser process-induced surface morphologies has been performed as well, leading to the observation of a wide range of hierarchical surface structures such as high-frequency ripples, grooves, protuberances and pillow-like patterns. Finally, water wettability was assessed by means of contact angle measurements on untreated titanium surface, and titanium surfaces resulting from either single-stage laser process or dual-stage laser process. Dual-stage laser process allows a transition of titanium surface, from phobic (93°) to philic (35°), making accessible both hydrophilic and chemically functionalized hierarchical surfaces.
Effect of Thermodiffusion Nitriding on Cytocompatibility of Ti-6Al-4V Titanium Alloy
NASA Astrophysics Data System (ADS)
Pohrelyuk, I. M.; Tkachuk, O. V.; Proskurnyak, R. V.; Boiko, N. M.; Kluchivska, O. Yu.; Stoika, R. S.
2016-04-01
The nitrided layer was formed on the surface of Ti-6Al-4V titanium alloy by the thermodiffusion saturation in nitrogen at the atmospheric pressure. The study of the vitality of pseudonormal human embryo kidney cells of the HEK293T line showed that their cultivation in the presence of the untreated alloy sample is accompanied by a statistically significant reduction in the number of living cells compared with the control sample (untreated cells), whereas their cultivation in the presence of the nitrided alloy sample does not change the cell number considerably. In addition, it was shown that cell behavior in the presence of the nitrided sample differs only slightly from the control sample, whereas the growth of cells in the presence of the untreated alloy differed significantly from that in the control sample, demonstrating small groups of cells instead of their big clusters.
2015-04-24
AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650...distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated
NASA Astrophysics Data System (ADS)
Nguyen, Chuong L.; Preston, Andrew; Tran, Anh T. T.; Dickinson, Michelle; Metson, James B.
2016-07-01
Aluminum casting alloys have excellent castability, high strength and good corrosion resistance. However, the presence of silicon in these alloys prevents surface finishing with conventional methods such as anodizing. Hard coating with titanium nitride can provide wear and corrosion resistances, as well as the aesthetic finish. A critical factor for a durable hard coating is its bonding with the underlying substrate. In this study, a titanium nitride layer was coated on LM25 casting alloy and a reference high purity aluminum substrate using Ion Assisted Deposition. Characterization of the coating and the critical interface was carried out by a range of complementing techniques, including SIMS, XPS, TEM, SEM/EDS and nano-indentation. It was observed that the coating on the aluminum alloy is stronger compared to that on the pure aluminum counterpart. Silicon particles in the alloy offers the reinforcement though mechanical interlocking at microscopic level, even with nano-scale height difference. This reinforcement overcomes the adverse effect caused by surface segregation of magnesium in aluminum casting alloys.
Protein adsorption on thin films of carbon and carbon nitride monitored with in situ ellipsometry.
Berlind, T; Tengvall, P; Hultman, L; Arwin, H
2011-03-01
Thin films of amorphous carbon and amorphous, graphitic and fullerene-like carbon nitride were deposited by reactive magnetron sputtering and optically characterized with spectroscopic ellipsometry. Complementary studies using scanning electron microscopy and atomic force microscopy were performed. The films were exposed to human serum albumin (HSA) and the adsorption was monitored in situ using dynamic ellipsometry. From the ellipsometric data the adsorbed amount of proteins was quantified in terms of surface mass density using de Feijter's model. The results indicate larger adsorption of proteins onto the amorphous films compared to the films with a more textured structure. Complementary studies with 125I-labeled HSA showed an apparent protein adsorption up to six times larger compared to the ellipsometry measurement. In addition, the four types of films were incubated in blood plasma followed by exposure to anti-fibrinogen, anti-HMWK or anti-C3c, revealing the materials' response to complement and contact activation. The amorphous and graphitic carbon nitride exhibit rather high immune activity compared to a titanium reference, whereas the amorphous carbon and the fullerene-like CNx show less immune complement deposition. Compared to the reference, all films exhibit indications of a stronger ability to initiate the intrinsic pathway of coagulation. Finally, the surfaces' bone-bonding ability was investigated by examination of their ability to form calcium phosphate crystals in a simulated body fluid, with a-CNx depositing most calcium phosphate after 21 days of incubation. Copyright © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Yuliati, L.; Salleh, A. M.; Hatta, M. H. M.; Lintang, H. O.
2018-04-01
In this study, titanium dioxide-carbon nitride (TiO2-CN) composites were prepared by three methods, which were one pot oxidation, impregnation, and physical mixing. Each series of the photocatalysts was prepared with different ratios of titanium to carbon (Ti/C), i.e., 1, 5, 10, 20, and 50 mol%. All samples were characterized by X-ray diffraction (XRD) and diffuse reflectance ultraviolet-visible (DR UV-Vis) spectroscopies. The characterization results confirmed the successful preparation of TiO2, CN, and the TiO2-CN composites. Photocatalytic activity tests were carried out for degradation of salicylic acid at room temperature for 6 h under UV and visible light irradiations. It was confirmed that all the prepared TiO2-CN composites showed better photocatalytic activities than the bare TiO2 and the bare CN. Under UV light irradiation, 90.6% of salicylic acid degradation was achieved on the best composite prepared by one pot oxidation with 5 mol% of titanium to carbon (Ti/C) ratio. On the other hand, the highest degradation under visible light irradiation was 94.3%, observed on the composite that was prepared also by one pot oxidation method with the Ti/C ratio of 10 mol%. Therefore, among the investigated methods, the best method to prepare the titanium dioxide-carbon nitride composites with high photocatalytic activity was one pot oxidation method.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Marulanda, D. M.; Trujillo, O.; Devia, A.
The Plasma Assisted Physic Vapor Deposition (PAPVD) by the pulsed arc technique has been used for deposition of Titanium Zirconium Nitride (Ti,Zr)N coatings, using a segmented target of TiZr. The deposition was performed in a vacuum chamber with two faced electrodes (target and substrate) using nitrogen as working gas, and a power-controlled source used to produce the arc discharges. Films were deposited on stainless steel 304, and they were characterized using the X-Ray Photoelectron Spectroscopy (XPS), X-Ray Diffraction (XRD), Energy Dispersion Spectroscopy (EDS) and Scanning Probe Microscopy (SPM) techniques. The XRD patterns show different planes in which the film grows.more » Through SPM, using Atomic Force Microscopy (AFM) and Lateral Force Microscopy (LFM) modes, a nanotribologic study of the thin film was made, determining hardness and friction coefficient.« less
NASA Astrophysics Data System (ADS)
Hirsch, Marzena; Wierzba, Paweł; Jedrzejewska-Szczerska, Małgorzata
2016-11-01
We examine the application of selected thin dielectric films, deposited by atomic layer deposition (ALD), in a low coherence fiber-optic Fabry-Pérot interferometer designed for sensing applications. Such films can be deposited on the end-face of a single mode optical fiber (SMF-28) in order to modify the reflectivity of the Fabry-Pérot cavity, to provide protection of the fibers from aggressive environments or to create a multi-cavity interferometric sensor. Spectral reflectance of films made from zinc oxide (ZnO), titanium dioxide (TiO2), aluminum oxide (Al2O3) and boron nitride (BN) was calculated for various thickness of the films and compared. The results show that the most promising materials for use in fiber-optic Fabry-Pérot interferometer are TiO2 and ZnO, although Al2O3 is also suitable for this application.
Improved superconducting qubit coherence using titanium nitride
NASA Astrophysics Data System (ADS)
Chang, Josephine B.; Vissers, Michael R.; Córcoles, Antonio D.; Sandberg, Martin; Gao, Jiansong; Abraham, David W.; Chow, Jerry M.; Gambetta, Jay M.; Beth Rothwell, Mary; Keefe, George A.; Steffen, Matthias; Pappas, David P.
2013-07-01
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ˜60 μs, by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to qubits made with lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that surface losses from two-level system (TLS) defects residing at or near interfaces contribute to decoherence. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators, which is inconsistent with the predicted TLS model.
Characterization of Ti and Co based biomaterials processed via laser based additive manufacturing
NASA Astrophysics Data System (ADS)
Sahasrabudhe, Himanshu
Titanium and Cobalt based metallic materials are currently the most ideal materials for load-bearing metallic bio medical applications. However, the long term tribological degradation of these materials still remains a problem that needs a solution. To improve the tribological performance of these two metallic systems, three different research approaches were adapted, stemming out four different research projects. First, the simplicity of laser gas nitriding was utilized with a modern LENS(TM) technology to form an in situ nitride rich later in titanium substrate material. This nitride rich composite coating improved the hardness by as much as fifteen times and reduced the wear rate by more than a magnitude. The leaching of metallic ions during wear was also reduced by four times. In the second research project, a mixture of titanium and silicon were processed on a titanium substrate in a nitrogen rich environment. The results of this reactive, in situ additive manufacturing process were Ti-Si-Nitride coatings that were harder than the titanium substrate by more than twenty times. These coatings also reduced the wear rate by more than two magnitudes. In the third research approach, composites of CoCrMo alloy and Calcium phosphate (CaP) bio ceramic were processed using LENS(TM) based additive manufacturing. These composites were effective in reducing the wear in the CoCrMo alloy by more than three times as well as reduce the leaching of cobalt and chromium ions during wear. The novel composite materials were found to develop a tribofilm during wear. In the final project, a combination of hard nitride coating and addition of CaP bioceramic was investigated by processing a mixture of Ti6Al4V alloy and CaP in a nitrogen rich environment using the LENS(TM) technology. The resultant Ti64-CaP-Nitride coatings significantly reduced the wear damage on the substrate. There was also a drastic reduction in the metal ions leached during wear. The results indicate that the three tested approaches for reducing the wear damage in Ti and Co based were successful. These approaches and the associated research investigations could pave the way for future work in alleviating wear and corrosion related damage, especially via the additive manufacturing route.
Lackner, Juergen M; Waldhauser, Wolfgang; Hartmann, Paul; Bruckert, Franz; Weidenhaupt, Marianne; Major, Roman; Sanak, Marek; Wiesinger, Martin; Heim, Daniel
2012-04-17
Biocompatibility improvements for blood contacting materials are of increasing interest for implanted devices and interventional tools. The current study focuses on inorganic (titanium, titanium nitride, titanium oxide) as well as diamond-like carbon (DLC) coating materials on polymer surfaces (thermoplastic polyurethane), deposited by magnetron sputtering und pulsed laser deposition at room temperature. DLC was used pure (a-C:H) as well as doped with silicon, titanium, and nitrogen + titanium (a-C:H:Si, a-C:H:Ti, a-C:H:N:Ti). In-vitro testing of the hemocompatibility requires mandatory dynamic test conditions to simulate in-vivo conditions, e.g., realized by a cone-and-plate analyzer. In such tests, titanium- and nitrogen-doped DLC and titanium nitride were found to be optimally anti-thrombotic and better than state-of-the-art polyurethane polymers. This is mainly due to the low tendency to platelet microparticle formation, a high content of remaining platelets in the whole blood after testing and low concentration of platelet activation and aggregation markers. Comparing this result to shear-flow induced cell motility tests with e.g., Dictostelium discoideum cell model organism reveals similar tendencies for the investigated materials.
Lackner, Juergen M.; Waldhauser, Wolfgang; Hartmann, Paul; Bruckert, Franz; Weidenhaupt, Marianne; Major, Roman; Sanak, Marek; Wiesinger, Martin; Heim, Daniel
2012-01-01
Biocompatibility improvements for blood contacting materials are of increasing interest for implanted devices and interventional tools. The current study focuses on inorganic (titanium, titanium nitride, titanium oxide) as well as diamond-like carbon (DLC) coating materials on polymer surfaces (thermoplastic polyurethane), deposited by magnetron sputtering und pulsed laser deposition at room temperature. DLC was used pure (a-C:H) as well as doped with silicon, titanium, and nitrogen + titanium (a-C:H:Si, a-C:H:Ti, a-C:H:N:Ti). In-vitro testing of the hemocompatibility requires mandatory dynamic test conditions to simulate in-vivo conditions, e.g., realized by a cone-and-plate analyzer. In such tests, titanium- and nitrogen-doped DLC and titanium nitride were found to be optimally anti-thrombotic and better than state-of-the-art polyurethane polymers. This is mainly due to the low tendency to platelet microparticle formation, a high content of remaining platelets in the whole blood after testing and low concentration of platelet activation and aggregation markers. Comparing this result to shear-flow induced cell motility tests with e.g., Dictostelium discoideum cell model organism reveals similar tendencies for the investigated materials. PMID:24955532
Aydın, Elanur; Türkez, Hasan; Hacımüftüoğlu, Fazıl; Tatar, Abdulgani; Geyikoğlu, Fatime
2017-07-01
Titanium nanoparticles (NPs) have very wide application areas such as paint, cosmetics, pharmaceuticals, and biomedical applications. And, to translate these nanomaterials to the clinic and industrial domains, their safety needs to be verified, particularly in terms of genotoxicity and cytotoxicity. Therefore, in this study, we aimed to investigate of cytotoxicity and changes in gene expression profiles influenced by commonly titanium (as titanium carbide, titanium carbo-nitride, titanium (II) oxide, titanium (III) oxide, titanium (IV) oxide, titanium nitride, titanium silicon oxide) NPs in human alveolar epithelial (HPAEpiC) and pharynx (HPPC) cell lines in vitro since inhalation is an important pathway for exposure to these NPs. HPAEpiC and HPPC cells were treated with titanium (0-100 µg/mL), NPs for 24 and 48 h, and then cytotoxicity was detected by, [3-(4,5-dimethyl-thiazol-2-yl) 2,5-diphenyltetrazolium bromide] (MTT), uptake of neutral red (NR) and lactate dehydrogenase (LDH) release assays, while genotoxicity was also analyzed by cDNA array - RT-PCR assay. According to the results of MTT, NR and LDH assays, all tested NPs induced cytotoxicity on both HPAEpiC and HPPC cells in a time- and dose-dependent manner. Determining and analyzing the gene expression profiles of HPAEpiC and HPPC cells, titanium NPs showed more changes in genes related to DNA damage or repair, oxidative stress, and apoptosis. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 2056-2064, 2017. © 2017 Wiley Periodicals, Inc.
STIR: Novel Electronic States by Gating Strongly Correlated Materials
2016-03-01
plan built on my group’s recent demonstration of electrolyte gating in Strontium Titanate, using an atomically thin hexagonal Boron Nitride barrier to...demonstration of electrolyte gating in Strontium Titanate, using an atomically thin hexagonal Boron Nitride barrier to prevent disorder and chemical...techniques and learned to apply thin hexagonal Boron Nitride to single crystals of materials expected to show some of the most exciting correlated
NASA Astrophysics Data System (ADS)
Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.
2018-03-01
Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.
METHOD OF COATING GRAPHITE WITH STABLE METAL CARBIDES AND NITRIDES
Gurinsky, D.H.
1959-10-27
A method is presented for forming protective stable nitride and carbide compounds on the surface of graphite. This is accomplished by contacting the graphite surface with a fused heavy liquid metal such as bismuth or leadbismuth containing zirconium, titanium, and hafnium dissolved or finely dispersed therein to form a carbide and nitride of at least one of the dissolved metals on the graphite surface.
Silicon nanowire array architecture for heterojunction electronics
DOE Office of Scientific and Technical Information (OSTI.GOV)
Solovan, M. M., E-mail: m.solovan@chnu.edu.ua; Brus, V. V.; Mostovyi, A. I.
2017-04-15
Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.
Supplemental heating of deposition tooling shields
Ohlhausen, James A.; Peebles, Diane E.; Hunter, John A.; Eckelmeyer, Kenneth H.
2000-01-01
A method of reducing particle generation from the thin coating deposited on the internal surfaces of a deposition chamber which undergoes temperature variation greater than 100.degree. C. comprising maintaining the temperature variation of the internal surfaces low enough during the process cycle to keep thermal expansion stresses between the coating and the surfaces under 500 MPa. For titanium nitride deposited on stainless steel, this means keeping temperature variations under approximately 70.degree. C. in a chamber that may be heated to over 350.degree. C. during a typical processing operation. Preferably, a supplemental heater is mounted behind the upper shield and controlled by a temperature sensitive element which provides feedback control based on the temperature of the upper shield.
Tribological characterization of TiCN coatings deposited by two crossed laser ablation plasma beams
NASA Astrophysics Data System (ADS)
Camps, Enrique; Escobar-Alarcón, L.; Camps, Iván; Muhl, Stephen; Flores, Martín
2013-03-01
The simultaneous laser ablation of two targets (graphite and titanium) in an Ar-N2 gas mixture was carried out to deposit thin films of the ternary compound TiCN at room temperature. The base conditions used to produce the TiN without carbon were taken from our previous studies. The experimental conditions for the ablation of the carbon target were varied so that the carbon content in the films could be changed depending on the carbon ion energy. The control of the experimental conditions was carried out using a Langmuir planar probe which permitted the determination of the mean kinetic ion energy. The maximum hardness value of 35 GPa, was obtained with a carbon ion energy of about 250 eV, which corresponds to a film with 5 at% carbon content. In order to perform tribological and scratch tests, two types of substrate were used: nitrided AISI 316 stainless steel and AISI 316 stainless steel previously coated with a thin titanium layer (˜50 nm). Values of the wear rate in the range of 1.39×10-6 to 7.45×10-5 mm3 N-1 m-1, friction coefficient from 0.21 to 0.28 and adhesion from scratch test measurements up to 80 N for final critical load, were obtained.
NASA Astrophysics Data System (ADS)
Ahmadi, Eltefat; Rezan, Sheikh Abdul; Baharun, Norlia; Ramakrishnan, Sivakumar; Fauzi, Ahmad; Zhang, Guangqing
2017-10-01
The kinetics of chlorination of titanium nitride (TiN) was investigated in the temperature range of 523 K to 673 K (250 °C to 400 °C). The results showed that the extent of chlorination slightly increased with increasing temperature and decreasing particle size of titanium nitride at constant flow rate of N2-Cl2 gas mixture. At 523 K (250 °C), the extent of chlorination was 85.6 pct in 60 minutes whereas at 673 K (400 °C), it was 97.7 pct investigated by weight loss measurement and confirmed by ICP analyses. The experimental results indicated that a shrinking unreacted core model with mixed-control mechanism governed the chlorination rate. It was observed that the surface chemical reaction of chlorine gas on the surface of TiN particles was rate controlling in the initial stage and, during later stage, internal (pore) diffusion through the intermediate product layer was rate controlling step. Overall the process follows the mixed-control model incorporating both chemical reaction and internal diffusion control. The activation energy for the chlorination of TiN was found to be about 10.97 kJ mol-1. In processing TiCl4 from TiN and TiO0.02C0.13N0.85, the solids involved in the chlorination process were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Energy-dispersive X-ray spectrometer (EDX). The SEM/EDX results demonstrated the consumption of TiN particles with extent of chlorination that showed shrinking core behavior.
Haldorai, Yuvaraj; Hwang, Seung-Kyu; Gopalan, Anantha-Iyengar; Huh, Yun Suk; Han, Young-Kyu; Voit, Walter; Sai-Anand, Gopalan; Lee, Kwang-Pill
2016-05-15
In this report, titanium nitride (TiN) nanoparticles decorated multi-walled carbon nanotube (MWCNTs) nanocomposite is fabricated via a two-step process. These two steps involve the decoration of titanium dioxide nanoparticles onto the MWCNTs surface and a subsequent thermal nitridation. Transmission electron microscopy shows that TiN nanoparticles with a mean diameter of ≤ 20 nm are homogeneously dispersed onto the MWCNTs surface. Direct electrochemistry and electrocatalysis of cytochrome c immobilized on the MWCNTs-TiN composite modified on a glassy carbon electrode for nitrite sensing are investigated. Under optimum conditions, the current response is linear to its concentration from 1 µM to 2000 µM with a sensitivity of 121.5 µA µM(-1)cm(-2) and a low detection limit of 0.0014 µM. The proposed electrode shows good reproducibility and long-term stability. The applicability of the as-prepared biosensor is validated by the successful detection of nitrite in tap and sea water samples. Copyright © 2015 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.
2015-11-01
Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G0W0, GW0 to partially self-consistent sc-GW0, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW0-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.
Dimensional Analysis and Extended Hydrodynamic Theory Applied to Long-Rod Penetration of Ceramics
2016-07-01
thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron carbide. Test...of confined thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron ...since the mid 20th century. Popular candidate ceramics for such systems include alumina, aluminum nitride, boron carbide, silicon carbide, and titanium
Vertical III-nitride thin-film power diode
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.
2017-03-14
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
NASA Technical Reports Server (NTRS)
Sproul, William D.
1996-01-01
The original program for evaluating the tribological properties several different hard coatings for liquid film bearing applications was curtailed when the time for the program was reduced from 3 years to 1. Of the several different coatings originally planned for evaluation, we decided to concentrate on one coating, carbon nitride. At BIRL, we have been instrumental in the development of reactively sputtered carbon nitride coatings, and we have found that it is a very interesting new material with very good tribological properties. In this program, we found that the reactively sputtered carbon nitride does not bond well directly to hardened 440C stainless steel; but if an interlayer of titanium nitride is added between the carbon nitride and the 440C, the adhesion of the dual coating combination is very good. Statistically designed experiments were run with the dual layer combination, and 3 variables were chosen for the Box-Benken design, which were the titanium nitride interlayer thickness, the nitrogen partial pressure during the reactive sputtering of the carbon nitride, and the carbon nitride substrate bias voltage. Two responses were studied from these three variables; the adhesion of the dual coating combination to the 440C substrate and the friction coefficient of the carbon nitride in dry sliding contact with 52100 steel in air. The best adhesion came with the thickness interlayer thickness studied, which was 4 micrometers, and the lowest coefficient of friction was 0.1, which was achieved when the bias voltage was in the range of -80 to - 120 V and the nitrogen partial pressure was 3 mTorr.
NASA Astrophysics Data System (ADS)
Krivina, L. A.; Tarasenko, Yu P.; Fel, Ya A.
2017-05-01
Influence of variable technological factors (arch current, fractional pressure of gas in the camera) on structure, physic-mechanical and tribological features of an ion-plasma coating of titanium nitride has been investigated. The adhesion solidity has been put to the test and the mechanism of destruction of a covering has been also researched by a skretch-test method. The optimal mode of spraying at which the formation of the nanostructured bar coating of TiN has been defined. The covering offers an optimal combination of physic-mechanical, tribological and solidity features.
Bone response to a titanium aluminium nitride coating on metallic implants.
Freeman, C O; Brook, I M
2006-05-01
The design, surface characteristics and strength of metallic implants are dependant on their intended use and clinical application. Surface modifications of materials may enable reduction of the time taken for osseointegration and improve the biological response of bio-mechanically favourable metals and alloys. The influence of a titanium aluminium nitride (TAN) coating on the response of bone to commercially pure titanium and austenitic 18/8 stainless steel wire is reported. TAN coated and plain rods of stainless steel and commercially pure titanium were implanted into the mid-shaft of the femur of Wistar rats. The femurs were harvested at four weeks and processed for scanning electron and light microscopy. All implants exhibited a favourable response in bone with no evidence of fibrous encapsulation. There was no significant difference in the amount of new bone formed around the different rods (osseoconduction), however, there was a greater degree of shrinkage separation of bone from the coated rods than from the plain rods (p = 0.017 stainless steel and p = 0.0085 titanium). TAN coating may result in reduced osseointegration between bone and implant.
Surface Chemistry, Microstructure, and Tribological Properties of Cubic Boron Nitride Films
NASA Technical Reports Server (NTRS)
Watanabe, Shuichi; Wheeler, Donald R.; Abel, Phillip B.; Street, Kenneth W.; Miyoshi, Kazuhisa; Murakawa, Masao; Miyake, Shojiro
1998-01-01
This report deals with the surface chemistry, microstructure, bonding state, morphology, and friction and wear properties of cubic boron nitride (c-BN) films that were synthesized by magnetically enhanced plasma ion plating. Several analytical techniques - x-ray photoelectron spectroscopy, transmission electron microscopy and electron diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, and surface profilometry - were used to characterize the films. Sliding friction experiments using a ball-on-disk configuration were conducted for the c-BN films in sliding contact with 440C stainless-steel balls at room temperature in ultrahigh vacuum (pressure, 10(exp -6), in ambient air, and under water lubrication. Results indicate that the boron-to-nitrogen ratio on the surface of the as-deposited c-BN film is greater than 1 and that not all the boron is present as boron nitride but a small percentage is present as an oxide. Both in air and under water lubrication, the c-BN film in sliding contact with steel showed a low wear rate, whereas a high wear rate was observed in vacuum. In air and under water lubrication, c-BN exhibited wear resistance superior to that of amorphous boron nitride, titanium nitride, and titanium carbide.
A novel pillar indentation splitting test for measuring fracture toughness of thin ceramic coatings
Sebastiani, Marco; Johanns, K. E.; Herbert, Erik G.; ...
2014-05-16
Fracture toughness is an important material property that plays a role in determining the in-service mechanical performance and adhesion of thin ceramic films. Unfortunately, measuring thin film fracture toughness is affected by influences from the substrate and the large residual stresses that can exist in the films. In this paper, we explore a promising new technique that potentially overcomes these problems based on nanoindentation testing of micro-pillars produced by focused ion beam milling of the films. By making the pillar diameter approximately equal to its length, the residual stress in the pillar’s upper portion is almost fully relaxed, and whenmore » indented with a sharp Berkovich indenter, the pillars fracture by splitting at reproducible loads that are readily quantified by a sudden displacement excursion in the load displacement behavior. Cohesive finite element simulations are used to analyze and develop, for a given material, a simple relation between the critical load at failure, pillar radius, and fracture toughness. The main novel aspect of this work is that neither crack geometries nor crack sizes need to be measured post test. Furthermore, the residual stress can be measured at the same time with toughness, by comparing the indentation results from the stress-free pillars and the as-deposited film. The method is tested on three different hard coatings formed by physical vapor deposition: titanium nitride, chromium nitride, and a CrAlN/Si 3N 4 nanocomposite. Results compare well to independently measured values of fracture toughness for the three brittle films. The technique offers several benefits over existing methods.« less
PHYSICAL PROPERTIES OF ZIRCONIUM NITRIDE IN THE HOMOGENEITY REGION (in Ukrainian)
DOE Office of Scientific and Technical Information (OSTI.GOV)
Samsonov, G.V.; Verkhoglyadova, T.S.
1962-01-01
The x-ray method was used to determine the homogeneity region of zirconium nitride as 40 to 50 at.% (9.5 to 13.3% by weight) of nitrogen. It is also shown that part of the ionic bond in the zirconium nitride lattice increases with a decrease in the nitrogen content in this region, this increase being higher than in the homogeneity region of titunium nitride due to the smaller degree of unfilling of the electron d-shell of the zirconium atom in comparison with that of the titanium atom. (auth)
Thin film phase diagram of iron nitrides grown by molecular beam epitaxy
NASA Astrophysics Data System (ADS)
Gölden, D.; Hildebrandt, E.; Alff, L.
2017-01-01
A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.
NASA Technical Reports Server (NTRS)
Bolgar, A. S.; Verkhoglyadova, T. S.; Samsonov, G. V.
1985-01-01
The vapor pressure and evaporation rate of borides of titanium, zirconium, and chrome; and of strontium and carbides of titanium, zirconium, and chrome, molybdenum silicide; and nitrides of titanium, niobium, and tantalum in a vacuum were studied. It is concluded that all subject compounds evaporate by molecular structures except AlB sub 12' which dissociates, losing the aluminum.
NASA Astrophysics Data System (ADS)
Piazzoni, C.; Blomqvist, M.; Podestà, A.; Bardizza, G.; Bonati, M.; Piseri, P.; Milani, P.; Davies, C.; Hatto, P.; Ducati, C.; Sedláčková, K.; Radnóczi, G.
2008-01-01
We report the production and characterization of nanocomposite thin films consisting of a titanium nitride matrix with embedded molybdenum disulphide fullerene-like nanoparticles. This was achieved by combining a cluster source generating a pulsed supersonic beam of MoS2 clusters with an industrial cathodic arc reactive evaporation apparatus used for TiN deposition. Cluster-assembled films show the presence of MoS2 nanocages and nanostructures and the survival of such structures dispersed in the TiN matrix in the co-deposited samples. Nanotribological characterization by atomic force microscopy shows that the presence of MoS2 nanoparticles even in very low concentration modifies the behaviour of the TiN matrix.
Functionally gradient hard carbon composites for improved adhesion and wear
NASA Astrophysics Data System (ADS)
Narayan, Roger Jagdish
A new approach is proposed for fabricating biomedical devices that last longer and are more biocompatible than those presently available. In this approach, a bulk material is chosen that has desirable mechanical properties (low modulus, high strength, high ductility and high fatigue strength). This material is coated with corrosion-resistant, wear-resistant, hard, and biocompatible hard carbon films. One of the many forms of carbon, tetrahedral amorphous carbon, consists mainly of sp3-bonded atoms. Tetrahedral amorphous carbon possesses properties close to diamond in terms of hardness, atomic smoothness, and inertness. Tetrahedral amorphous carbon and diamond films usually contain large amounts of compressive and sometimes tensile stresses; adhesive failure from these stresses has limited widespread use of these materials. This research involves processing, characterization and modeling of functionally gradient tetrahedral amorphous carbon and diamond composite films on metals (cobalt-chromium and titanium alloys) and polymers (polymethylmethacrylate and polyethylene) used in biomedical applications. Multilayer discontinuous thin films of titanium carbide, titanium nitride, aluminum nitride, and tungsten carbide have been developed to control stresses and graphitization in diamond films. A morphology of randomly interconnected micron sized diamond crystallites provides increased toughness and stress reduction. Internal stresses in tetrahedral amorphous carbon were reduced via incorporation of carbide forming elements (silicon and titanium) and noncarbide forming elements (copper, platinum, and silver). These materials were produced using a novel target design during pulsed laser deposition. These alloying atoms reduce hardness and sp3-bonded carbon content, but increase adhesion and wear resistance. Silver and platinum provide the films with antimicrobial properties, and silicon provides bioactivity and aids bone formation. Bilayer coatings were created that couple the adherence, biocompatibility, erosion resistance, and long term release of functional elements from hard carbon coatings with bioactive properties of nanocrystalline hydroxyapatite and short term drug release properties of resorbable poly (D,L) lactide-based materials. Finally, these hard carbon coatings have a variety of non-medical applications, including use in microelectronics packaging, sensors, flat panel displays, photodiodes, cutting tools, optical switches, and wear-resistant magnetic disks.
Optical Properties and Plasmonic Performance of Titanium Nitride
Patsalas, Panos; Kalfagiannis, Nikolaos; Kassavetis, Spyros
2015-01-01
Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility of its growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review the dielectric function spectra of TiN and we evaluate the plasmonic performance of TiN by calculating (i) the Surface Plasmon Polariton (SPP) dispersion relations and (ii) the Localized Surface Plasmon Resonance (LSPR) band of TiN nanoparticles, and we demonstrate a significant plasmonic performance of TiN.
Electrical transport properties of epitaxial titanium nitride nanowire
NASA Astrophysics Data System (ADS)
Makise, K.; Shinozaki, B.
2018-03-01
We have measured the transport properties of epitaxial titanium nitride (TiN) nanowires. Epitaxial TiN layer, deposited by dc magnetron sputtering on MgO(100) substrates at growth temperature T = 1073 K. Samples of nanowire were fabricated by e-beam lithography and reactive ion etching. Although TiN films with 100 nm-thickness have superconducting transition temperature T C ∼ 5 K, nanowires does not appear resistive transition until 0.15 K. The magnetoresistance (MR) are always negative. Furthermore for MR experimental results, we attempt to fit the data using one-dimensional weak localization theory. In addition we observed oscillations of magnetoresistance below 5 K.
Metal surface nitriding by laser induced plasma
NASA Astrophysics Data System (ADS)
Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.
1996-10-01
We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features as purity, thickness, and surface morphology.
Cost-effective masks for deep x-ray lithography
NASA Astrophysics Data System (ADS)
Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost
2003-04-01
The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.
Tian, Xinlong; Tang, Haibo; Luo, Junming; ...
2017-04-25
A class of core–shell structured low-platinum catalysts with well-dispersed inexpensive titanium copper nitride nanoparticles as cores and atomic platinum layers as shells exhibiting high activity and stability for the oxygen reduction reaction is successfully developed. In using nitrided carbon nanotubes (NCNTs) as the support greatly improved the morphology and dispersion of the nitride nanoparticles, resulting in significant enhancement of the performance of the catalyst. The optimized catalyst, Ti 0.9Cu 0.1N@Pt/NCNTs, has a Pt mass activity 5 times higher than that of commercial Pt/C, comparable to that of core–shell catalysts with precious metal nanoparticles as the core, and much higher thanmore » that the latter if we take into account the mass activity of all platinum group metals. Furthermore, only a minimal loss of activity can be observed after 10000 potential cycles, demonstrating the catalyst’s high stability. After durability testing, atomic-scale elemental mapping confirmed that the core–shell structure of the catalyst remained intact. This approach may open a pathway for the design and preparation of high-performance inexpensive core–shell catalysts for a wide range of applications in energy conversion processes.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tian, Xinlong; Tang, Haibo; Luo, Junming
A class of core–shell structured low-platinum catalysts with well-dispersed inexpensive titanium copper nitride nanoparticles as cores and atomic platinum layers as shells exhibiting high activity and stability for the oxygen reduction reaction is successfully developed. In using nitrided carbon nanotubes (NCNTs) as the support greatly improved the morphology and dispersion of the nitride nanoparticles, resulting in significant enhancement of the performance of the catalyst. The optimized catalyst, Ti 0.9Cu 0.1N@Pt/NCNTs, has a Pt mass activity 5 times higher than that of commercial Pt/C, comparable to that of core–shell catalysts with precious metal nanoparticles as the core, and much higher thanmore » that the latter if we take into account the mass activity of all platinum group metals. Furthermore, only a minimal loss of activity can be observed after 10000 potential cycles, demonstrating the catalyst’s high stability. After durability testing, atomic-scale elemental mapping confirmed that the core–shell structure of the catalyst remained intact. This approach may open a pathway for the design and preparation of high-performance inexpensive core–shell catalysts for a wide range of applications in energy conversion processes.« less
Corrosion resistance and mechanical properties of titanium nitride plating on orthodontic wires.
Sugisawa, Haruki; Kitaura, Hideki; Ueda, Kyosuke; Kimura, Keisuke; Ishida, Masahiko; Ochi, Yumiko; Kishikawa, Akiko; Ogawa, Saika; Takano-Yamamoto, Teruko
2018-03-30
Titanium nitride (TiN) coating by ion plating has properties such as high hardness, wear resistance, corrosion resistance, and surface lubricity, therefore TiN coating is often used in various dental appliances and materials. In this study, we evaluated the corrosion behaviors and mechanical properties of TiN coated stainless steel (SS) and nickel titanium (Ni-Ti) orthodontic wires prepared by ion plating. TiN coating by ion plating improves the corrosion resistance of orthodontic wires. The corrosion pitting of the TiN coated wire surface become small. The tensile strength and stiffness of SS wire were increased after TiN coating. In contrast, its elastic force, which is a property for Ni-Ti wire, was decreased. In addition, TiN coating provided small friction forces. The low level of friction may increase tooth movement efficiently. Therefore, TiN coated SS wire could be useful for orthodontics treatment.
Diffusion, convection, and solidification in cw-mode free electron laser nitrided titanium
NASA Astrophysics Data System (ADS)
Höche, Daniel; Shinn, Michelle; Müller, Sven; Schaaf, Peter
2009-04-01
Titanium sheets were irradiated by free electron laser radiation in cw mode in pure nitrogen. Due to the interaction, nitrogen diffusion occurs and titanium nitride was synthesized in the tracks. Overlapping tracks have been utilized to create coatings in order to improve the tribological properties of the sheets. Caused by the local heating and the spatial dimension of the melt pool, convection effects were observed and related to the track properties. Stress, hardness, and nitrogen content were investigated with x-ray diffraction, nanoindention, and resonant nuclear reaction analysis. The measured results were correlated with the scan parameters, especially to the lateral track shift. Cross section micrographs were prepared and investigated by means of scanning electron microscopy. They show the solidification behavior, phase formation, and the nitrogen distribution. The experiments give an insight into the possibilities of materials processing using such a unique heat source.
High strength particulate ceramics
Liles, Kenneth J.; Hoyer, Jesse L.; Mlynarski, Kenneth W.
1991-01-01
This invention relates to new and useful hard, dense, composite materials made from metallic nitrides such as titanium nitride when combined with aluminum oxide and aluminum nitride and a process comprising the steps of: (1) mixing constituent materials using kerosene as a mixing medium; (2) screening, settling, filtering, and washing the mixture in acetone; (3) filling and sealing said materials in a latex mold; (4) isostatically pressing the material into a compacted powder; and (5) sintering the compacted powder in a gas atmosphere at 1,850.degree. C. for two hours.
Giant perpendicular magnetic anisotropy in Fe/III-V nitride thin films
2018-01-01
Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the (0001¯) N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between x2 − y2 and xy orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces. PMID:29670948
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mehmood, Faisal; General Dynamics Information Technology, Inc., Dayton, Ohio 45433; Pachter, Ruth, E-mail: ruth.pachter@us.af.mil
Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green'smore » (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G{sub 0}W{sub 0}, GW{sub 0} to partially self-consistent sc-GW{sub 0}, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW{sub 0}-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.« less
Thin Film Ceramic Strain Sensor Development for High Temperature Environments
NASA Technical Reports Server (NTRS)
Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M.; Laster, Kimala L.
2008-01-01
The need for sensors to operate in harsh environments is illustrated by the need for measurements in the turbine engine hot section. The degradation and damage that develops over time in hot section components can lead to catastrophic failure. At present, the degradation processes that occur in the harsh hot section environment are poorly characterized, which hinders development of more durable components, and since it is so difficult to model turbine blade temperatures, strains, etc, actual measurements are needed. The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in harsh environments. The effort at the NASA Glenn Research Center (GRC) to develop high temperature thin film ceramic static strain gauges for application in turbine engines is described, first in the fan and compressor modules, and then in the hot section. The near-term goal of this research effort was to identify candidate thin film ceramic sensor materials and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. A thorough literature search was conducted for ceramics that have the potential for application as high temperature thin film strain gauges chemically and physically compatible with the NASA GRCs microfabrication procedures and substrate materials. Test results are given for tantalum, titanium and zirconium-based nitride and oxynitride ceramic films.
Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient
NASA Technical Reports Server (NTRS)
Cohen, R. A.; Wheeler, R. K. (Inventor)
1974-01-01
A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.
NASA Astrophysics Data System (ADS)
Belkin, P. N.; Kusmanov, S. A.; Dyakov, I. G.; Silkin, S. A.; Smirnov, A. A.
2017-05-01
In our previous studies, we have shown that anode plasma electrolytic saturation of titanium alloys with nitrogen and carbon can improve their tribological properties. Obtained structure containing oxide layer and solid solution of diffused element in titanium promotes the enhancement of running-in ability and the decrease in the wear rate in some special cases. In this paper, further investigations are reported regarding the tribological properties of alpha- and beta-titanium alloys in wear test against hardened steel (50 HRC) disk using pin-on-disk geometry and balls of Al2O3 (6.25 mm in diameter) or bearing steel (9.6 mm in diameter) with ball-on-plate one and normal load from 5 to 209 N. Reproducible results were obtained under testing samples treated by means of the plasma electrolytic nitriding (PEN) with the mechanical removal of the oxide layer. Friction coefficient of nitrided samples is 0.5-0.9 which is somewhat higher than that for untreated one (0.48-0.75) during dry sliding against Al2O3 ball. An increase in the sliding speed results in the polishing of nitrided samples and reduction of their wear rate by 60 times. This result is obtained for 5 min at 850 °C using PEN in electrolyte containing 5 wt.% ammonia and 10 wt.% ammonium chloride followed by quenching in solution. Optical microscope was employed to assist in the evaluation of the wear behavior. Sizes of wear tracks were measured by profilometer TR200.
Titanium Nitride: An Oxidizable Coating for the High-Temperature Protection of Graphite
NASA Technical Reports Server (NTRS)
Wakelyn, N. T.
1961-01-01
A titanium nitride coating for graphite, prepared by deposition process, protected test specimens for 60 seconds the vapors in a supersonic ceramic-heated air jet with a stagnation temperature of approximately 2,250 K. For the same test conditions, coated specimens showed no damage to the graphite body for the 60-second test, whereas uncoated specimens were very severely damaged after 20 seconds and were destroyed toward the end of the test. A discussion of the coating of these graphite specimens and of some of the conditions necessary for the utilization of oxidizable substances as oxidation-protective coatings for bodies facing high convective heat transfer in the atmosphere is presented.
Fabrication of Low-Noise TES Arrays for the SAFARI Instrument on SPICA
NASA Astrophysics Data System (ADS)
Ridder, M. L.; Khosropanah, P.; Hijmering, R. A.; Suzuki, T.; Bruijn, M. P.; Hoevers, H. F. C.; Gao, J. R.; Zuiddam, M. R.
2016-07-01
Ultra-low-noise transition edge sensors (TES) with noise equivalent power lower than 2 × 10^{-19} W/Hz^{1/2 } have been fabricated by SRON, which meet the sensitivity requirements for the far-infrared SAFARI instrument on space infrared telescope for cosmology and astrophysics. Our TES detector is based on a titanium/gold (Ti/Au) thermistor on a silicon nitride (SiN) island. The island is thermally linked with SiN legs to a silicon support structure at the bath temperature. The SiN legs are very thin (250 nm), narrow (500 nm), and long (above 300 {\\upmu } m); these dimensions are needed in leg-isolated bolometers to achieve the required level of sensitivity. In this paper, we describe the latest fabrication process for our TES bolometers with improved sensitivity.
DNA translocation through graphene nanopores.
Merchant, Christopher A; Healy, Ken; Wanunu, Meni; Ray, Vishva; Peterman, Neil; Bartel, John; Fischbein, Michael D; Venta, Kimberly; Luo, Zhengtang; Johnson, A T Charlie; Drndić, Marija
2010-08-11
We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.
Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe
NASA Astrophysics Data System (ADS)
Solovan, M. M.; Brus, V. V.; Maryanchuk, P. D.; Ilashchuk, M. I.; Rappich, J.; Nickel, N.; Abashin, S. L.
2014-01-01
Photosensitive heterojunctions n-TiN/p-CdTe were fabricated for the first time by means of titanium nitride thin film deposition (n-type conductivity) by the reactive magnetron sputtering onto freshly etched single crystal substrates CdTe (1 1 0) of p-type conductivity. The temperature dependences of the height of the potential barrier and series resistance of the n-TiN/p-CdTe heterojunction were investigated. The dominating current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.35 V, short-circuit current Isc = 1.88 mA см-2 and fill factor FF = 0.51 under illumination 80 mW сm-2.
NASA Astrophysics Data System (ADS)
Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku
2014-01-01
Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.
NASA Astrophysics Data System (ADS)
Chen, Xiaoxiang; Li, Wuyi; Pan, Zhanchang; Xu, Yanbin; Liu, Gen; Hu, Guanghui; Wu, Shoukun; Li, Jinghong; Chen, Chun; Lin, Yingsheng
2018-05-01
Titanium cobalt nitride nanotubes (Ti0.95Co0.05N NTs) hybrid support, a novel robust non-carbon support material prepared by solvothermal and post-nitriding processes, is further decorated with Pt nanoparticles for the electrooxidation of methanol. The catalyst is characterized by X-ray diffraction (XRD), nitrogen adsorption/desorption, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The morphology, structure and composition of the synthesized Ti0.95Co0.05N NTs suggest that the nanotube wall is porous and consists of homogeneous cohesively attached nitrides nanocube particles. Notable, Ti0.95Co0.05N NTs supported Pt catalyst exhibits significantly improved catalytic activity and durability for methanol electrooxidation compared with the conventional JM Pt/C catalyst. The experimental data indicate that enhanced catalytic activity and stability of Pt/Ti0.95Co0.05N NTs towards methanol electrooxidation might be mainly attributed to the tubular nanostructures and synergistic effect introduced by the Co doping. Both of them are playing an important role in improving the activity and durability of the Ti0.95Co0.05N NTs catalyst.
Studies of the micromorphology of sputtered TiN thin films by autocorrelation techniques
NASA Astrophysics Data System (ADS)
Smagoń, Kamil; Stach, Sebastian; Ţălu, Ştefan; Arman, Ali; Achour, Amine; Luna, Carlos; Ghobadi, Nader; Mardani, Mohsen; Hafezi, Fatemeh; Ahmadpourian, Azin; Ganji, Mohsen; Grayeli Korpi, Alireza
2017-12-01
Autocorrelation techniques are crucial tools for the study of the micromorphology of surfaces: They provide the description of anisotropic properties and the identification of repeated patterns on the surface, facilitating the comparison of samples. In the present investigation, some fundamental concepts of these techniques including the autocorrelation function and autocorrelation length have been reviewed and applied in the study of titanium nitride thin films by atomic force microscopy (AFM). The studied samples were grown on glass substrates by reactive magnetron sputtering at different substrate temperatures (from 25 {}°C to 400 {}°C , and their micromorphology was studied by AFM. The obtained AFM data were analyzed using MountainsMap Premium software obtaining the correlation function, the structure of isotropy and the spatial parameters according to ISO 25178 and EUR 15178N. These studies indicated that the substrate temperature during the deposition process is an important parameter to modify the micromorphology of sputtered TiN thin films and to find optimized surface properties. For instance, the autocorrelation length exhibited a maximum value for the sample prepared at a substrate temperature of 300 {}°C , and the sample obtained at 400 {}°C presented a maximum angle of the direction of the surface structure.
NASA Astrophysics Data System (ADS)
Wei, L.; Zhao, T. S.; Zeng, L.; Zeng, Y. K.; Jiang, H. R.
2017-02-01
In this work, we prepare a highly catalytic and stabilized titanium nitride (TiN) nanowire array-decorated graphite felt electrode for all vanadium redox flow batteries (VRFBs). Free-standing TiN nanowires are synthesized by a two-step process, in which TiO2 nanowires are first grown onto the surface of graphite felt via a seed-assisted hydrothermal method and then converted to TiN through nitridation reaction. When applied to VRFBs, the prepared electrode enables the electrolyte utilization and energy efficiency to be 73.9% and 77.4% at a high current density of 300 mA cm-2, which are correspondingly 43.3% and 15.4% higher than that of battery assembled with a pristine electrode. More impressively, the present battery exhibits good stability and high capacity retention during the cycle test. The superior performance is ascribed to the significant improvement in the electrochemical kinetics and enlarged active sites toward V3+/V2+ redox reaction.
Stability of Titanium Nitride and Titanium Carbide When Exposed to Hydrogen Atoms from 298 to 1950 K
NASA Technical Reports Server (NTRS)
Philipp, Warren H.
1961-01-01
Titanium nitride and titanium carbide deposited on tungsten wires were exposed to hydrogen atoms (10(exp -4) atm pressure) produced by the action of microwave radiation on molecular hydrogen. The results of these experiments in the temperature range 298 to 1950 K indicate that no appreciable reaction takes place between atomic hydrogen and TiN or TiC. The formation of reaction products (NH3, CH4, C2H2) should be favored at lower temperatures. However, because of the high catalytic activity of Ti for H atom recombination, the rate of such reactions with H atoms is controlled by the rate of evaporation of Ti from the surface, this rate being low at temperatures below 1200 K. In order to interpret the stability of TiN and TiC in H atoms more fully, the stability of TiN and TiC in vacuum and H2 gas was also studied. The thermodynamic computations conform in order of magnitude to the experimentally found rates of decomposition of TiN and TiC in vacuum and are also consistent with the fact that no appreciable reaction is found with these compounds in molecular H2 at a pressure of 10(exp -3) atmosphere in the temperature range 2980 to 2060 K. When TiN or TiC was heated in atomic H or molecular H2, no reaction products other than those obtained from the simple decomposition of the nitride and carbide were observed. The gaseous products were analyzed in a mass spectrometer.
Cadena, Natalia L; Cue-Sampedro, Rodrigo; Siller, Héctor R; Arizmendi-Morquecho, Ana M; Rivera-Solorio, Carlos I; Di-Nardo, Santiago
2013-05-24
The manufacture of medical and aerospace components made of titanium alloys and other difficult-to-cut materials requires the parallel development of high performance cutting tools coated with materials capable of enhanced tribological and resistance properties. In this matter, a thin nanocomposite film made out of AlCrN (aluminum-chromium-nitride) was studied in this research, showing experimental work in the deposition process and its characterization. A heat-treated monolayer coating, competitive with other coatings in the machining of titanium alloys, was analyzed. Different analysis and characterizations were performed on the manufactured coating by scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM-EDXS), and X-ray diffraction (XRD). Furthermore, the mechanical behavior of the coating was evaluated through hardness test and tribology with pin-on-disk to quantify friction coefficient and wear rate. Finally, machinability tests using coated tungsten carbide cutting tools were executed in order to determine its performance through wear resistance, which is a key issue of cutting tools in high-end cutting at elevated temperatures. It was demonstrated that the specimen (with lower friction coefficient than previous research) is more efficient in machinability tests in Ti6Al4V alloys. Furthermore, the heat-treated monolayer coating presented better performance in comparison with a conventional monolayer of AlCrN coating.
Cadena, Natalia L.; Cue-Sampedro, Rodrigo; Siller, Héctor R.; Arizmendi-Morquecho, Ana M.; Rivera-Solorio, Carlos I.; Di-Nardo, Santiago
2013-01-01
The manufacture of medical and aerospace components made of titanium alloys and other difficult-to-cut materials requires the parallel development of high performance cutting tools coated with materials capable of enhanced tribological and resistance properties. In this matter, a thin nanocomposite film made out of AlCrN (aluminum–chromium–nitride) was studied in this research, showing experimental work in the deposition process and its characterization. A heat-treated monolayer coating, competitive with other coatings in the machining of titanium alloys, was analyzed. Different analysis and characterizations were performed on the manufactured coating by scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM-EDXS), and X-ray diffraction (XRD). Furthermore, the mechanical behavior of the coating was evaluated through hardness test and tribology with pin-on-disk to quantify friction coefficient and wear rate. Finally, machinability tests using coated tungsten carbide cutting tools were executed in order to determine its performance through wear resistance, which is a key issue of cutting tools in high-end cutting at elevated temperatures. It was demonstrated that the specimen (with lower friction coefficient than previous research) is more efficient in machinability tests in Ti6Al4V alloys. Furthermore, the heat-treated monolayer coating presented better performance in comparison with a conventional monolayer of AlCrN coating. PMID:28809266
NASA Astrophysics Data System (ADS)
Sait, R. A.; Cross, R. B. M.
2017-12-01
A growing demand for chronically implantable electrodes has led to a search for the most suitable neural electrode interface material. Nobel metals such as platinum (Pt) are inadequate for electrode/neuron interfaces at small scales due to their poor electrochemical properties, low charge injection and high charge density per unit area. Titanium nitride (TiN) has been implemented in neural electrodes application due to its outstanding properties. In this work, TiNx films were deposited by non-reactive radio frequency (RF) magnetron sputtering towards the development of a novel TiN nanowires (NWs) neural interface. Although, there is substantial work on this material, its growth using non-reactive RF magnetron sputtering has not been reported previously and optimised towards the growth of TiN NWs and their use in neural interface applications. The sputtering parameters of RF power and argon (Ar) flow rate were varied in order to investigate their effects on the structural, electrical and electrochemical properties of the TiN films. A dense film morphology was observed in the scanning electron microscopy (SEM) images of TiN thin films showing a columnar structure. The film preferential orientation was changed between (200) and (111) with Ar flow rate due to the variation of the kinetic energy (KE) of the sputtered atoms. The crystallites size obtained were in the range of 13-95 nm. Surface roughness was found to increase from 0.69 to 1.95 nm as Ar flow rate increased. TiNx films showed a good electrical resistivity of 228 μΩ cm. Stoichiometry was found to vary with sputtering conditions in which the nitrogen content was found to deplete from the film at low Ar flow rate. The electrochemical behaviour of TiN films were characterised and the highest capacitance value obtained was 0.416 mF/cm2. From the results, it can be suggested that TiN thin film can be easily optimised to act as a nucleation layer for the growth of nanowires.
Penetration Resistance of Armor Ceramics: Dimensional Analysis and Property Correlations
2015-08-01
been reported in experimental studies. Particular ceramics analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon...analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon carbide, and titanium diboride. Data for penetration depth...include high hardness, high elastic stiffness, high strengths (static/dynamic compressive, shear, and bending), and low density relative to armor steels
Sun, Wei; Tan, Chee-Keong; Tansu, Nelson
2017-07-27
The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.
A method to monitor the quality of ultra-thin nitride for trench DRAM with a buried strap structure
NASA Astrophysics Data System (ADS)
Wu, Yung-Hsien; Wang, Chun-Yao; Chang, Ian; Kao, Chien-Kang; Kuo, Chia-Ming; Ku, Alex
2007-02-01
A new approach to monitor the quality of an ultra-thin nitride film has been proposed. The nitride quality is monitored by observing the oxide thickness for the nitride film after wet oxidation since the resistance to oxidation strongly depends on its quality. To obtain a stable oxide thickness without interference from extrinsic factors for process monitoring, monitor wafers without dilute HF solution clean are suggested because the native-oxide containing surface is less sensitive to oxygen and therefore forms the nitride film with stable quality. In addition, the correlation between variable retention time (VRT) performance of a real dynamic random access memory (DRAM) product and oxide thickness from different nitride process temperatures can be successfully explained and this correlation can also be used to establish the appropriate oxide thickness range for process monitoring.
Doped indium nitride thin film by sol-gel spin coating method
NASA Astrophysics Data System (ADS)
Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong
2017-12-01
In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.
Annunziata, Marco; Oliva, Adriana; Basile, Maria Assunta; Giordano, Michele; Mazzola, Nello; Rizzo, Antonietta; Lanza, Alessandro; Guida, Luigi
2011-11-01
Titanium nitride (TiN) coating has been proposed as an adjunctive surface treatment aimed to increase the physico-mechanical and aesthetic properties of dental implants. In this study we investigated the surface characteristics of TiN-coated titanium plasma sprayed (TiN-TPS) and uncoated titanium plasma sprayed (TPS) surfaces and their biological features towards both primary human bone marrow mesenchymal stem cells (BM-MSC) and bacterial cultures. 15 mm×1 mm TPS and TiN-TPS disks (P.H.I. s.r.l., San Vittore Olona, Milano, Italy) were topographically analysed by confocal optical profilometry. Primary human BM-MSC were obtained from healthy donors, isolated and expanded. Cells were seeded on the titanium disks and cell adhesion, proliferation, protein synthesis and osteoblastic differentiation in terms of alkaline phosphatase activity, osteocalcin synthesis and extracellular mineralization, were evaluated. Furthermore, adhesion and proliferation of Streptococcus pyogenes and Streptococcus sanguinis on both surfaces were also analysed. TiN-TPS disks showed a decreased roughness (about 50%, p < 0.05) and a decreased bacterial adhesion and proliferation compared to TPS ones. No difference (p > 0.05) in terms of BM-MSC adhesion, proliferation and osteoblastic differentiation between TPS and TiN-TPS surfaces was found. TiN coating showed to modify the topographical characteristics of TPS titanium surfaces and to significantly reduce bacterial adhesion and proliferation, although maintaining their biological affinity towards bone cell precursors. Copyright © 2011 Elsevier Ltd. All rights reserved.
Influence of Abutment Color and Mucosal Thickness on Soft Tissue Color.
Ferrari, Marco; Carrabba, Michele; Vichi, Alessandro; Goracci, Cecilia; Cagidiaco, Maria Crysanti
Zirconia (ZrO₂) and titanium nitride (TiN) implant abutments were introduced mainly for esthetic purposes, as titanium's gray color can be visible through mucosal tissues. This study was aimed at assessing whether ZrO₂ and TiN abutments could achieve better esthetics in comparison with titanium (Ti) abutments, regarding the appearance of soft tissues. Ninety patients were included in the study. Each patient was provided with an implant (OsseoSpeed, Dentsply Implant System). A two-stage surgical technique was performed. Six months later, surgical reentry was performed. After 1 week, provisional restorations were screwed onto the implants. After 8 weeks, implant-level impressions were taken and soft tissue thickness was recorded, ranking thin (≤ 2 mm) or thick (≥ 2 mm). Patients were randomly allocated to three experimental groups, based on abutment type: (1) Ti, (2) TiN, and (3) ZrO₂. After 15 weeks, the final restorations were delivered. The mucosal area referring to each abutment was measured for color using a clinical spectrophotometer (Easyshade, VITA); color measurements of the contralateral areas referring to natural teeth were performed at the same time. The data were collected using the Commission Internationale de l'Eclairage (CIE) L*a*b* color system, and ΔE was calculated between peri-implant and contralateral soft tissues. A critical threshold of ΔE = 3.7 was selected. The chi-square test was used to identify statistically significant differences in ΔE between thin and thick mucosal tissues and among the abutment types. Three patients were lost at follow-up. No statistically significant differences were noticed as to the abutment type (P = .966). Statistically significant differences in ΔE were recorded between thick and thin peri-implant soft tissues (P < .001). Only 2 out of 64 patients with thick soft tissues showed a ΔE higher than 3.7: 1 in the TiN group and 1 in the ZrO₂ group. All the patients with thin soft tissues reported color changes that exceeded the critical threshold. The different abutment materials showed comparable results in terms of influence on soft tissue color. Regarding peri-implant soft tissue thickness, the influence of the tested abutments on soft tissue color became clinically relevant for values ≤ 2 mm.
Anomalous response of superconducting titanium nitride resonators to terahertz radiation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bueno, J., E-mail: j.bueno@sron.nl; Baselmans, J. J. A; Coumou, P. C. J. J.
We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggestmore » that an inhomogeneous state of these disordered superconductors should be used to explain these observations.« less
DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS.
DOE Office of Scientific and Technical Information (OSTI.GOV)
HE,P.; HSEUH,H.C.; MAPES,M.
2001-06-18
The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with {approximately}100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent resultsmore » were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented.« less
NASA Astrophysics Data System (ADS)
Zgrabik, Christine Michelle
Transition metal nitrides have recently garnered much interest as alternative materials for robust plasmonic device architecture including potential applications in solar absorbers, photothermal medical therapy, and heat-assisted magnetic recording. Titanium nitride (TiN) is one such potential candidate. One advantage of the transition metal nitrides is that their optical properties are tunable according to the deposition conditions. The controlled achievement of tunability, however, is also a challenge. Although the formation of TiN has been the subject of numerous previous studies, a thorough analysis of the deposition parameters necessary to form metallic TiN films optimized for plasmonic applications had not been demonstrated. Similarly, such TiN films had not been subjected to detailed optical measurements which could be used in FDTD device simulations to optimize plasmonic device designs. To be able to design, simulate and build robust and optimal device structures, in this work a systematic and thorough examination of the effect of varied substrates, temperatures, and reactive gas compositions on magnetron sputtered TiN was conducted. In addition, the effects of application of an additional substrate bias were studied. The resulting optical properties at visible to near-infrared frequencies were the focus of this thesis. The optical properties of each film were measured via spectroscopic ellipsometry with more "metallic" films demonstrating a larger negative value of the real part of the permittivity. These optical measurements were correlated with both the films' deposition conditions and microstructural measurements including x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and transmission electron microscopy (TEM) measurements; the different deposition conditions resulted in TiN and TiOxNy films with widely tunable optical responses. By sputtering under different conditions, the value of the real part of the permittivity was tuned from small positive values, through small and moderate negative values, and finally all of the way to large negative values which are comparable to those measured in gold. It was determined that both the chemical composition as well as the film crystallinity had a significant effect on the resulting properties with the most metallic films in general exhibiting a Ti:N ratio close to 1:1, low oxygen incorporation, more N bound as TiN rather than in oxynitride form, and better crystallinity. Increased substrate temperature in general increased the metallic character while application of a substrate bias reduced crystalline order, however also reduced oxygen incorporation and allowed for deposition of metallic TiN at room temperature. The close lattice match of TiN and MgO allowed for heteroepitaxial growth on this substrate under carefully controlled conditions. Finally, to demonstrate the viability of the optimized TiN thin films for plasmonic applications, three benchmark plasmonic structures were simulated using the measured, optimized optical properties including a plasmonic grating coupler, infrared nanoantennas, and a nanopyramidal array. The devices were successfully fabricated and preliminary measurements show promise for plasmonic applications for example in solar conversion and photothermal medical therapy.
NASA Astrophysics Data System (ADS)
Ahmadi, Eltefat; Hamid, Sheikh Abdul Rezan Sheikh Abdul; Hussin, Hashim; Baharun, Norlia; Ariffin, Kamar Shah; Ramakrishnan, Sivakumar; Fauzi, M. N. Ahmad; Ismail, Hanafi
2017-07-01
In this paper, the carbothermal reduction and nitridation (CTRN) of Malaysian ilmenite has been studied as a part of crucial steps involved in reduction and subsequent chlorination processes for synthesizing titanium tetrachloride (TiCl4) from nitrided Malaysian ilmenite concentrates. In CTRN, waste plastics such as polyethylene terephthalate (PET) could be utilized as an alternative source of carbon reductant. In this study, titanium oxycarbonitride (TiOxCyNz) separated from iron (Fe) phase was synthesized by non-isothermal CTRN of Malaysian ilmenite under H2-N2 atmosphere by utilizing a mixture of Sarawak Mukah-Balingan coal and PET as reducing agents in a horizontal tube furnace. Experiments have been carried out in the temperature range of 1150-1250°C for 3 hours with various ratios of PET to coal (25 wt.% PET, 50 wt.% PET, and 75 wt.% PET). X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) methods of analysis were conducted to assess the microstructures and chemical compositions of the unreduced and reduced samples. The results indicated that utilizing PET had a significant effect on iron separation from titanium oxycarbonitride (TiO0.02C0.13N0.85) at 1250°C with a mixture of 75 wt.% PET. Furthermore, XRD and SEM studies demonstrated that with increasing PET weight ratio in the mixtures, the rate of conversion increased and a low-carbon TiOxCyNz with minimal intermediate titanium sub-oxides was synthesized. The method of applying PET as potential reductant for CTRN of ilmenite has beneficial side effects in sustainable recycling of waste PET.
Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing
NASA Astrophysics Data System (ADS)
Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro
2018-06-01
The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.
NASA Astrophysics Data System (ADS)
Kavitha, A.; Kannan, R.; Gunasekhar, K. R.; Rajashabala, S.
2017-10-01
Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 μΩ cm to 1800 μΩ cm. Atomic force microscopy studies of the TiN thin films deposited with N2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.
Investigation of the Kinetic Energy Characterization of Advanced Ceramics
2015-04-01
of Science, under a US Army International Technology Center contract. These ceramic formulations were compared with standard armor-grade boron ...Experimental Methodology 1 3. Results and Discussion 4 3.1 Aluminum Performance Baseline 4 3.2 Ceramic Inspection 6 3.3 Boron Carbide 6 3.4 Silicon...Carbide 7 3.5 Boron Carbide–Aluminum Nitride 7 3.6 Boron Carbide–Vanadium Diboride 7 3.7 Titanium Nitride–Aluminum Nitride 8 3.8 Comparative
1978-01-01
Beam Lead Sealed Junction (ELSJ) devices, the silicon nitride seals the devices from sodium and since the platinum silicide and titanium metals also...improve the surface stability of bipolar devices. These materials act as gettering agents for sodium ions, thus making the contamination far less...electric field, can cause appreciable device parameter instability. Silicon nitride has been shown to be an effective barrier to sodium migration. In
Epitaxial ternary nitride thin films prepared by a chemical solution method
DOE Office of Scientific and Technical Information (OSTI.GOV)
Luo, Hongmei; Feldmann, David M; Wang, Haiyan
2008-01-01
It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.
Transition-Metal Nitride Core@Noble-Metal Shell Nanoparticles as Highly CO Tolerant Catalysts
Garg, Aaron; Milina, Maria; Ball, Madelyn; ...
2017-05-25
Core–shell architectures offer an effective way to tune and enhance the properties of noble-metal catalysts. Herein, we demonstrate the synthesis of Pt shell on titanium tungsten nitride core nanoparticles (Pt/TiWN) by high temperature ammonia nitridation of a parent core–shell carbide material (Pt/TiWC). X-ray photoelectron spectroscopy revealed significant core-level shifts for Pt shells supported on TiWN cores, corresponding to increased stabilization of the Pt valence d-states. The modulation of the electronic structure of the Pt shell by the nitride core translated into enhanced CO tolerance during hydrogen electrooxidation in the presence of CO. In conclusion, the ability to control shell coveragemore » and vary the heterometallic composition of the shell and nitride core opens up attractive opportunities to synthesize a broad range of new materials with tunable catalytic properties.« less
Transition-Metal Nitride Core@Noble-Metal Shell Nanoparticles as Highly CO Tolerant Catalysts
DOE Office of Scientific and Technical Information (OSTI.GOV)
Garg, Aaron; Milina, Maria; Ball, Madelyn
Core–shell architectures offer an effective way to tune and enhance the properties of noble-metal catalysts. Herein, we demonstrate the synthesis of Pt shell on titanium tungsten nitride core nanoparticles (Pt/TiWN) by high temperature ammonia nitridation of a parent core–shell carbide material (Pt/TiWC). X-ray photoelectron spectroscopy revealed significant core-level shifts for Pt shells supported on TiWN cores, corresponding to increased stabilization of the Pt valence d-states. The modulation of the electronic structure of the Pt shell by the nitride core translated into enhanced CO tolerance during hydrogen electrooxidation in the presence of CO. In conclusion, the ability to control shell coveragemore » and vary the heterometallic composition of the shell and nitride core opens up attractive opportunities to synthesize a broad range of new materials with tunable catalytic properties.« less
Rolling contact fatigue of surface modified 440C using a 'Ge-Polymet' type disc rod test rig
NASA Technical Reports Server (NTRS)
Thom, Robert L.
1989-01-01
Through hardened 440 C martensitic stainless steel test specimens were surface modified and tested for changes in rolling contact fatigue using a disc on rod test rig. The surface modifications consisted of nitrogen, boron, titanium, chromium, tantalum, carbon, or molybdenum ion implantation at various ion fluences and energies. Tests were also performed on specimens reactively sputtered with titanium nitride.
Evaluation of coated metallic bipolar plates for polymer electrolyte membrane fuel cells
NASA Astrophysics Data System (ADS)
Yoon, Wonseok; Huang, Xinyu; Fazzino, Paul; Reifsnider, Kenneth L.; Akkaoui, Michael A.
Metallic bipolar plates for polymer electrolyte membrane (PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance, good mechanical robustness, low material and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrates by electroplating and physical vapor deposition (PVD) methods. The coatings are screened with an electrochemical polarization test for corrosion resistance; then the contact resistance test was performed on selected coatings. The coating investigated include Gold with various thicknesses (2 nm, 10 nm, and 1 μm), Titanium, Zirconium, Zirconium Nitride (ZrN), Zirconium Niobium (ZrNb), and Zirconium Nitride with a Gold top layer (ZrNAu). The substrates include three types of stainless steel: 304, 310, and 316. The results show that Zr-coated samples satisfy the DOE target for corrosion resistance at both anode and cathode sides in typical PEM fuel cell environments in the short-term, but they do not meet the DOE contact resistance goal. Very thin gold coating (2 nm) can significantly decrease the electrical contact resistance, however a relatively thick gold coating (>10 nm) with our deposition method is necessary for adequate corrosion resistance, particularly for the cathode side of the bipolar plate.
Thin-film diffusion brazing of titanium alloys
NASA Technical Reports Server (NTRS)
Mikus, E. B.
1972-01-01
A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.
NASA Technical Reports Server (NTRS)
Perkins, G. S.; Pawlik, E. V.; Phillips, W. M. (Inventor)
1981-01-01
A nozzle for use with abrasive and/or corrosive materials is formed of sintered ceramic compositions having high temperature oxidation resistance, high hardness and high abrasion and corrosion resistance. The ceramic may be a binary solid solution of a ceramic oxide and silicon nitride, and preferably a ternary solid solution of a ceramic oxide, silicon nitride and aluminum nitride. The ceramic oxide is selected from a group consisting of Al2O3, Y2O3 and Cr2O3, or mixtures of those compounds. Titanium carbide particles are dispersed in the ceramic mixture before sintering. The nozzles are encased for protection from external forces while in use by a metal or plastic casing.
Evaluation of End Mill Coatings
DOE Office of Scientific and Technical Information (OSTI.GOV)
L. J. Lazarus; R. L. Hester,
2005-08-01
Milling tests were run on families of High Speed Steel (HSS) end mills to determine their lives while machining 304 Stainless Steel. The end mills tested were made from M7, M42 and T15-CPM High Speed Steels. The end mills were also evaluated with no coatings as well as with Titanium Nitride (TiN) and Titanium Carbo-Nitride (TiCN) coatings to determine which combination of HSS and coating provided the highest increase in end mill life while increasing the cost of the tool the least. We found end mill made from M42 gave us the largest increase in tool life with the leastmore » increase in cost. The results of this study will be used by Cutting Tool Engineering in determining which end mill descriptions will be dropped from our tool catalog.« less
Surface Participation Effects in Titanium Nitride and Niobium Resonators
NASA Astrophysics Data System (ADS)
Dove, Allison; Kreikebaum, John Mark; Livingston, William; Delva, Remy; Qiu, Yanjie; Lolowang, Reinhard; Ramasesh, Vinay; O'Brien, Kevin; Siddiqi, Irfan
Improving the coherence time of superconducting qubits requires a precise understanding of the location and density of surface defects. Superconducting microwave resonators are commonly used for quantum state readout and are a versatile testbed to systematically characterize materials properties as a function of device geometry and fabrication method. We report on sputter deposited titanium nitride and niobium on silicon coplanar waveguide resonators patterned using reactive ion etches to define the device geometry. We discuss the impact of different growth conditions (temperature and electrical bias) and processing techniques on the internal quality factor (Q) of these devices. In particular, to investigate the effect of surface participation, we use a Bosch process to etch many-micron-deep trenches in the silicon substrate and quantify the impact of etch depth and profile on the internal Q. This research was supported by the ARO.
NASA Astrophysics Data System (ADS)
Ahmadi, Eltefat; Fauzi, Ahmad; Hussin, Hashim; Baharun, Norlia; Ariffin, Kamar Shah; Rezan, Sheikh Abdul
2017-04-01
An innovative and sustainable carbothermal reduction and nitridation (CTRN) process of ilmenite (FeTiO3) using a mixture of polyethylene terephthalate (PET) and coal as the primary reductant under an H2-N2 atmosphere was proposed. The use of PET as an alternative source of carbon not only enhances the porosity of the pellets but also results in the separation of Fe from titanium oxycarbonitride (TiO x C y N z ) particles because of the differences in surface tension. The experiments were carried out at 1250°C for 3 h using four different PET contents ranging from 25wt% to 100wt% in the reductant. X-ray diffraction (XRD), scanning electron microscopy (SEM) in conjunction with energy-dispersive X-ray spectroscopy (EDX), and LECO elemental analysis were used to study the phases and microstructures of the reduced samples. In the case of 75wt% PET, iron distinctly separated from the synthesized TiO x C y N z phase. With increasing PET content in the sample, the reduction and nitridation rates substantially increased. The synthesis of an oxycarbonitride with stoichiometry of TiO0.02C0.13N0.85 with minimal intermediate titanium sub-oxides was achieved. The results also showed that the iron particles formed from CTRN of FeTiO3 exhibited a spherical morphology, which is conducive for Fe removal via the Becher process.
NASA Astrophysics Data System (ADS)
Lu, C.; Yao, J. W.; Wang, Y. X.; Zhu, Y. D.; Guo, J. H.; Wang, Y.; Fu, H. Y.; Chen, Z. B.; Yan, M. F.
2018-02-01
The heat treatment (consisting of solid solution and aging), is integrated with the nitriding process of titanium coated ZL205A aluminum alloy to improve the surface and matrix mechanical properties simultaneously. Two-step duplex treatment is adopted to prepare the gradient multiphase layer on a magnesium-free ZL205A aluminum-copper based alloy. Firstly, pure titanium film is deposited on the aluminum alloy substrate using magnetron sputtering. Secondly, the Ti-coated specimen is nitrided at the solid solution temperature of the substrate alloying elements in a gas mixture of N2 and H2 and aged at 175 °C. The microstructure evolution, microhardness as well as the wear resistance of obtained multiphase layers are investigated by means of scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometer (EDS), microhardness tester and pin-on-disc tribometer. The multiphase layer, dominated by TiN0.3 or Al3Ti, is prepared with significantly increased layer depth after duplex treatment. The surface hardness of multiphase layer is remarkably improved from 23.7HV to 457HV. The core matrix hardness is also increased to 65HV after aging. The wear rate of the multiphase layer decreases about 55.22% and 49.28% in comparison with the aged and Ti coated specimens, respectively. The predominant wear mechanism for the multiphase layer is abrasive and oxidation, but severe adhesive wear for the aged and Ti coated specimens.
NASA Astrophysics Data System (ADS)
Shishodia, Manmohan Singh; Pathania, Pankaj
2018-04-01
Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.
Synthesis, Properties, and Applications Of Boron Nitride
NASA Technical Reports Server (NTRS)
Pouch, John J.; Alterovitz, Samuel A.
1993-01-01
Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.
A charge optimized many-body potential for titanium nitride (TiN).
Cheng, Y-T; Liang, T; Martinez, J A; Phillpot, S R; Sinnott, S B
2014-07-02
This work presents a new empirical, variable charge potential for TiN systems in the charge-optimized many-body potential framework. The potential parameters were determined by fitting them to experimental data for the enthalpy of formation, lattice parameters, and elastic constants of rocksalt structured TiN. The potential does a good job of describing the fundamental physical properties (defect formation and surface energies) of TiN relative to the predictions of first-principles calculations. This potential is used in classical molecular dynamics simulations to examine the interface of fcc-Ti(0 0 1)/TiN(0 0 1) and to characterize the adsorption of oxygen atoms and molecules on the TiN(0 0 1) surface. The results indicate that the potential is well suited to model TiN thin films and to explore the chemistry associated with their oxidation.
Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport
NASA Astrophysics Data System (ADS)
Long, Gen; Xu, Shuigang; Shen, Junying; Hou, Jianqiang; Wu, Zefei; Han, Tianyi; Lin, Jiangxiazi; Wong, Wing Ki; Cai, Yuan; Lortz, Rolf; Wang, Ning
2016-09-01
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 cm2 V-1 s-1 and 8400 cm2 V-1 s-1 are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.
Optimization of process parameters for RF sputter deposition of tin-nitride thin-films
NASA Astrophysics Data System (ADS)
Jangid, Teena; Rao, G. Mohan
2018-05-01
Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.
Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos
2018-01-01
Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267
2007-02-01
fabrication of dense thin sheets of gamma titanium aluminide . Polarized light microscopy revealed a fine-grained microstructure but a few isolated...HIPed (near-gamma) microstructure occurred. 15. SUBJECT TERMS gamma titanium aluminide , thin sheet, tape casting, hot isostatic pressing 16...sheets (250–300 μm thick) of gamma titanium aluminide (γ-TiAl). Polarized light microscopy revealed a fine-grained microstructure (average grain
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bhadram, Venkata S.; Liu, Hanyu; Xu, Enshi
We report the discovery of a long-sought-after phase of titanium nitride with stoichiometry Ti3N4 using diamond anvil cell experiments combined with in situ high-resolution x-ray diffraction and Raman spectroscopy techniques, supported by ab initio calculations.
Synthesis of galium nitride thin films using sol-gel dip coating method
NASA Astrophysics Data System (ADS)
Hamid, Maizatul Akmam Ab; Ng, Sha Shiong
2017-12-01
In this research, gallium nitride (GaN) thin film were grown on silicon (Si) substrate by a low-cost sol-gel dip coating deposition method. The GaN precursor solution was prepared using gallium (III) nitrate hydrate powder, ethanol and diethanolamine as a starting material, solvent and surfactant respectively. The structural, morphological and optical characteristics of the deposited GaN thin film were investigated. Field-emission scanning electron microscopy observations showed that crack free and dense grains GaN thin films were formed. Energy dispersive X-ray analysis confirmed that the oxygen content in the deposited films was low. X-ray diffraction results revealed that deposited GaN thin films have hexagonal wurtzite structure.
Wang, Xian-li; Guo, Tian-wen
2012-09-01
To study the corrosion resistance of casted titanium by plasma nitriding and TiN-coated compound treatments in the artificial saliva with different fluoride concentrations and to investigate whether compound treatments can increase the corrosion resistance of casted titanium. Potentiodynamic polarization technique was used to depict polarization curve and to measured the current density of corrosion (Icorr) and the electric potential of corrosion (Ecorr) of casted titanium (Group A) and casted titanium by compound treatments (Group B) in the artificial saliva with different fluoride concentrations. After electrochemical experiment, the microstructure was observed by scanning electron microscope (SEM). The Icorrs of Group A and B in the artificial saliva of different fluoride concentrations were (1530.23 ± 340.12), (2290.36 ± 320.10), (4130.52 ± 230.17) nA and (2.62 ± 0.64), (7.37 ± 3.59), (10.76 ± 6.05) nA, respectively. The Ecorrs were (-0.93 ± 0.10), (-0.89 ± 0.21), (-0.57 ± 0.09) V and (-0.21 ± 0.04), (-0.17 ± 0.03), (-0.22 ± 0.03) V, respectively.The Icorrs of Group B were significantly lower (P < 0.01)than that of Group A. The Icorrs increased significantly with the increasing of fluoride concentrations (P < 0.01). The Ecorrs of Group B were significantly higher than that of Group A (P < 0.01). The SEM confirmed the microstructure in the casted titanium was much severely than that in Group B, the microstructure in Group A and B corroded more and more heavily with increasing of fluoride concentrations. The increase of fluoride concentrations influence the corrosion resistance of both treated and untreated casted titanium negatively, but plasma nitriding and TiN-coated compound treatments can significantly increase the corrosion resistance of casted titanium.
Monolithic microcircuit techniques and processes
NASA Technical Reports Server (NTRS)
Kennedy, B. W.
1972-01-01
Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.
NASA Astrophysics Data System (ADS)
Sowińska, Agnieszka; Czarnowska, Elżbieta; Tarnowski, Michał; Witkowska, Justyna; Wierzchoń, Tadeusz
2018-04-01
Significant efforts are being made towards developing novel antithrombotic materials. The purpose of the presented study was to characterize two variants of nitrided surface layers produced on alloy Ti-6Al-4V in different areas of low-temperature plasma - at the plasma potential (TiNp) or at the cathode potential (TiNc). The layers were characterized in terms of their microstructure, surface topography and wettability, and platelet response to the environment of different pH. The produced layers were of the TiN + Ti2N + αTiN-type, but the layer produced at the plasma potential was thinner, smoother and had lower surface free energy compared with that produced at the cathode potential. Biological evaluation demonstrated more fibrinogen buildup, less platelet adhesion and aggregation, and fewer strongly activated platelets on the TiNp surface compared with those parameters on the TiNc surface and on the titanium alloy in its initial state. Interestingly, both surface types were significantly resistant to fibrinogen adsorption and platelet adhesion in the environment of lower pH. In conclusion, the nitrided surface layer produced at the plasma potential is a promising material and this basic information is critical for further development of hemocompatible materials.
1978-01-01
silicon nitride seals the devices from sodium and since the platinum silicide and titanium metals also offer very low mobility to the alkaline ions, the...of bipolar devices. These materials act as gettering agents for sodium ions, thus making the contamination far less mobile. The stability of the...parameter instability. Silicon nitride has been shown to be an effective barrier to sodium migration. In Beam Lead Sealed Junction (BLSJ) devices, the
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013
High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less
Kinetic modelling of chlorination of nitrided ilmenite using MATLAB
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ramakrishnan, Sivakumar, E-mail: srsivakumar@usm.my; Kwok, Teong Chen, E-mail: ctck@live.com; Hamid, Sheikh Abdul Rezan Sheikh Abdul, E-mail: rezanshk@gmail.com
In the present study, chlorination of nitride ilmenite using 2{sup k} factorial design was investigated. The reduction experiments were carried out in a temperature range of 400°C to 500°C, chlorination duration from 1 hour to 3 hours and using different type of carbon reactant. Phases of raw materials and reduced samples were analyzed by X-ray diffraction (XRD). Ilmenite was reduced to TiO{sub x}C{sub y}N{sub z} through carbothermal and nitridation for further chlorination into titanium tetrachloride. The Design of Experiment analysis suggested that the types of carbon reactant contribute most influence to the extent of chlorination of nitride ilmenite. The extentmore » of chlorination was highest at 500°C with 3 hours chlorination time and carbon nanotube as carbon reactant.« less
Molecular titanium nitrides: nucleophiles unleashed
Grant, Lauren N.; Pinter, Balazs; Kurogi, Takashi; ...
2017-01-30
In this contribution we present reactivity studies of a rare example of a titanium salt, in the form of [μ 2-K(OEt 2)] 2[(PN) 2Timore » $$\\equiv$$N] 2 (1) (PN - = N-(2-(diisopropylphosphino)-4-methylphenyl)-2,4,6-trimethylanilide) to produce a series of imide moieties including rare examples such as methylimido, borylimido, phosphonylimido, and a parent imido. For the latter, using various weak acids allowed us to narrow the pK a range of the NH group in (PN) 2Ti$$\\equiv$$NH to be between 26–36. Complex 1 could be produced by a reductively promoted elimination of N 2 from the azide precursor (PN) 2TiN 3, whereas reductive splitting of N 2 could not be achieved using the complex (PN) 2Ti$$\\equiv$$N$$\\equiv$$N$$\\equiv$$Ti(PN) 2 (2) and a strong reductant. Complete N-atom transfer reactions could also be observed when 1 was treated with ClC(O) tBu and OCCPh 2 to form NC tBu and KNCCPh 2, respectively, along with the terminal oxo complex (PN) 2Ti$$\\equiv$$O, which was also characterized. A combination of solid state 15N NMR (MAS) and theoretical studies allowed us to understand the shielding effect of the counter cation in dimer 1, the monomer [K(18-crown-6)][(PN) 2Ti$$\\equiv$$N], and the discrete salt [K(2,2,2-Kryptofix)][(PN) 2Ti$$\\equiv$$N] as well as the origin of the highly downfield 15N NMR resonance when shifting from dimer to monomer to a terminal nitride (discrete salt). The upfield shift of 15N nitride resonance in the 15N NMR spectrum was found to be linked to the K + induced electronic structural change of the titanium-nitride functionality by using a combination of MO analysis and quantum chemical analysis of the corresponding shielding tensors.« less
Substrate-insensitive atomic layer deposition of plasmonic titanium nitride films
Yu, Ing-Song; Cheng, Hsyi-En; Chang, Chun-Chieh; ...
2017-02-06
The plasmonic properties of titanium nitride (TiN) films depend on the type of substrate when using typical deposition methods such as sputtering. We show atomic layer deposition (ALD) of TiN films with very weak dependence of plasmonic properties on the substrate, which also suggests the prediction and evaluation of plasmonic performance of TiN nanostructures on arbitrary substrates under a given deposition condition. Our results also observe that substrates with more nitrogen-terminated (N-terminated) surfaces will have significant impact on the deposition rate as well as the film plasmonic properties. Furthermore, we illustrate that the plasmonic properties of ALD TiN films canmore » be tailored by simply adjusting the deposition and/or post-deposition annealing temperatures. These characteristics and the capability of conformal coating make ALD TiN films on templates ideal for applications that require the fabrication of complex 3D plasmonic nanostructures.« less
Fully CMOS-compatible titanium nitride nanoantennas
DOE Office of Scientific and Technical Information (OSTI.GOV)
Briggs, Justin A., E-mail: jabriggs@stanford.edu; Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305; Naik, Gururaj V.
CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements onmore » plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.« less
Yang, Sungeun; Kim, Jiwhan; Tak, Young Joo; Soon, Aloysius; Lee, Hyunjoo
2016-02-05
As a catalyst, single-atom platinum may provide an ideal structure for platinum minimization. Herein, a single-atom catalyst of platinum supported on titanium nitride nanoparticles were successfully prepared with the aid of chlorine ligands. Unlike platinum nanoparticles, the single-atom active sites predominantly produced hydrogen peroxide in the electrochemical oxygen reduction with the highest mass activity reported so far. The electrocatalytic oxidation of small organic molecules, such as formic acid and methanol, also exhibited unique selectivity on the single-atom platinum catalyst. A lack of platinum ensemble sites changed the reaction pathway for the oxygen-reduction reaction toward a two-electron pathway and formic acid oxidation toward direct dehydrogenation, and also induced no activity for the methanol oxidation. This work demonstrates that single-atom platinum can be an efficient electrocatalyst with high mass activity and unique selectivity. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Production and characterization of a novel carbon nanotube/titanium nitride nanocomposite
NASA Astrophysics Data System (ADS)
Baddour, Carole Emilie; Das, Kaushik; Vengallatore, Srikar; Meunier, Jean-Luc
2016-12-01
A novel titanium nitride (TiN)/carbon nanotube (CNT) nanocomposite is produced with the purpose to mechanically, structurally and chemically stabilize a ‘felt-like’ CNT growth structure. The CNTs are grown on stainless steel (SS) 304 by chemical vapor deposition using the direct growth method previously developed, which does not require the use of an additional catalyst precursor. The TiN coating is achieved by physical vapor deposition and is shown here to generate a nanocomposite with a porous three-dimensional architecture. The contact stiffness is evaluated using nanoindentation, and wetting properties of the TiN/CNT nanocomposites are determined from contact angle measurements. An increase in contact stiffness and effective elastic modulus with TiN coating time was observed. The TiN coating on the non-wetting CNT felt results in a wetting nanocomposite surface. The wetting property is found to be a function of the TiN coating thickness on the CNT structure.
NASA Astrophysics Data System (ADS)
Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.
2017-05-01
The paper presents the results of metallographic researches and erosion tests of ion-plasma coatings (based on titanium, aluminum and their nitrides), which were formed on samples of 12Kh13 and EI961 blade steels. Erosion tests and studies of characteristics of obtained by magnetron sputtering coatings were carried out by using a set of research equipment UNU “Erosion-M” NRU “MPEI”. It was found that the formed Ti/Al-TiN/AlN coatings increase the duration of blade steels erosion wear incubation period by at least in 1.5 times and have a layered structure with thicknesses of nitride layers 1.3-1.6 μm and intermediate metallic layers 0.3-0.5 μm, with a total thickness of coatings of 10-14 μm for 12Kh13steel samples and 19-21 μm for EI961 steel samples.
Zhang, Xin; Wang, Zhuang; Wang, Se; Fang, Hao; Zhang, Fan; Wang, De-Gao
2017-01-02
Freshwater dispersion stability and ecotoxicological effects of titanium nitride (TiN) with particle size of 20 nm, 50 nm, and 2-10 μm in the presence of dissolved organic matter (DOM) at various concentrations were studied. The TiN particles that had a more negative zeta potential and smaller hydrodynamic size showed more stable dispersion in an aqueous medium when DOM was present than when DOM was absent. Biochemical assays indicated that relative to the control, the TiN particles in the presence of DOM alleviated to some extent the antioxidative stress enzyme activity in Scenedesmus obliquus. In addition, it was found that the TiN with a primary size of 50 nm at a high concentration presented a significant impact on non-enzymatic antioxidant defense in algal cells.
NASA Astrophysics Data System (ADS)
Liu, Jia-Kuang; Liu, I.-Hua; Liu, Cheng; Chang, Chen-Jung; Kung, Kuan-Chen; Liu, Yen-Ting; Lee, Tzer-Min; Jou, Jin-Long
2014-10-01
The purpose of this investigation was to develop titanium nitride (TiN)/titanium (Ti) coating on orthodontic nickel-titanium (NiTi) wires and to study the stress corrosion of specimens in vitro, simulating the intra-oral environment in as realistic a manner as possible. TiN/Ti coatings were formed on orthodontic NiTi wires by physical vapor deposition (PVD). The characteristics of untreated and TiN/Ti-coated NiTi wires were evaluated by measurement of corrosion potential (Ecorr), corrosion current densities (Icorr), breakdown potential (Eb), and surface morphology in artificial saliva with different pH and three-point bending conditions. From the potentiodynamic polarization and SEM results, the untreated NiTi wires showed localized corrosion compared with the uniform corrosion observed in the TiN/Ti-coated specimen under both unstressed and stressed conditions. The bending stress influenced the corrosion current density and breakdown potential of untreated specimens at both pH 2 and pH 5.3. Although the bending stress influenced the corrosion current of the TiN/Ti-coated specimens, stable and passive corrosion behavior of the stressed specimen was observed even at 2.0 V (Ag/AgCl). It should be noted that the surface properties of the NiTi alloy could determine clinical performance. For orthodontic application, the mechanical damage destroys the protective oxide film of NiTi; however, the self-repairing capacity of the passive film of NiTi alloys is inferior to Ti in chloride-containing solutions. In this study, the TiN coating was found able to provide protection against mechanical damage, while the Ti interlayer improved the corrosion properties in an aggressive environment.
Superconducting structure with layers of niobium nitride and aluminum nitride
Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.
1989-01-01
A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.
Superconducting structure with layers of niobium nitride and aluminum nitride
Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.
1989-07-04
A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.
Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption.
Fryauf, David M; Diaz Leon, Juan J; Phillips, Andrew C; Kobayashi, Nobuhiko P
2017-05-10
Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors. In-situ argon ion bombardment was introduced after silver deposition and prior to the deposition of dielectric films to assess its effects on the performance of the mirrors. We found that ion bombardment of the silver influenced surface morphology and reflectivity, and these effects correlated with time between silver deposition and ion bombardment. The overall reflectivity at wavelengths in the range of 350-800 nm was found to improve due to ion bombardment, which was qualitatively interpreted as a result of decreased surface plasmon resonance coupling. We suggest that the observed decrease in coupling is caused by silver grain boundary pinning due to ion bombardment suppressing silver surface diffusion, forming smoother silver-dielectric interfaces.
NASA Astrophysics Data System (ADS)
Bonse, J.; Kirner, S. V.; Koter, R.; Pentzien, S.; Spaltmann, D.; Krüger, J.
2017-10-01
Titanium nitride (TiN) was coated on different substrate materials, namely pure titanium (Ti), titanium alloy (Ti6Al4V) and steel (100Cr6), generating 2.5 μm thick TiN layers. Using femtosecond laser pulses (30 fs, 790 nm, 1 kHz pulse repetition rate), large surface areas (5 mm × 5 mm) of laser-induced periodic surface structures (LIPSS) with sub-wavelength periods ranging between 470 nm and 600 nm were generated and characterized by optical microscopy (OM), white light interference microscopy (WLIM) and scanning electron microscopy (SEM). In tribological tests, coefficients of friction (COF) of the nanostructured surfaces were determined under reciprocating sliding conditions (1 Hz, 1.0 N normal load) against a 10-mm diameter ball of hardened 100Cr6 steel during 1000 cycles using two different lubricants, namely paraffin oil and engine oil. It turned out that the substrate material, the laser fluence and the lubricant are crucial for the tribological performance. However, friction and wear could not be significantly reduced by LIPSS on TiN layers in comparison to unstructured TiN surfaces. Finally, the resulting wear tracks on the nanostructured surfaces were investigated with respect to their morphology (OM, SEM), depth (WLIM) and chemical composition by energy dispersive X-ray spectroscopy (EDX) and, on one hand, compared with each other, on the other hand, with non-structured TiN surfaces.
Development and Characterization of Titanium Compound N anostructures
NASA Astrophysics Data System (ADS)
Zhou, Zhou
The development and characterization of titanium compound nanostructures have been achieved, for potential applications in energy industry. Oil and gas, one of the traditional industry fields, observes accumulating demands on active implementations of nanotechnology, for the numerous advantages that nanomaterials can introduce to both product performances and field operations. By using chemical vapor deposition and liquid exfoliation, various titanium compound nanostructures have been synthesized through this project. Attractively, these two material fabrication methods have been recognized to be industrial friendly in terms of cost efficiency and productivity. The development of nanostructures, aiming at oil and gas field applications, presents novel solutions for existing issues, such as low durability of drilling tools, high friction in mechanical operations and ineffective heat dissipation. Titanium compound nanostructures, including titanium borides, nitrides and sulfides are therefore investigated for such applications as protective coating, lubrication and thermal management.
NASA Astrophysics Data System (ADS)
Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz
2015-04-01
NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.
Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride
NASA Astrophysics Data System (ADS)
Rinaldo, Steven G.
This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the formation of boron nitride nanotubes (BNNTs). In Chapter 6, we look at various methods of producing BNNTs from boron droplets, and introduce a new method involving injection of boron powder into an induction furnace. In Chapter 7 we consider another useful process, where ammonia is reacted with boron vapor generated in situ, either through the reaction of boron with metal oxides or through the decomposition of metal borides.
Hidroxyapatite Coating on CoCrMo Alloy Titanium Nitride Coated Using Biomimetic Method
NASA Astrophysics Data System (ADS)
Charlena; Sukaryo, S. G.; Fajar, M.
2016-11-01
Bone implants is a way to cure broken bones which is being developed. The implants can be made of metals, ceramics and polymers. Metallic materials commonly used are titanium (Ti), stainless steel, and metal alloys. This study used Co-based alloys, i.e. CoCrMo coated with titanium nitride (TiN) which was then coated on hidroxyapatite (HAp). The HAp coating on the surface of CoCrMo alloy was done by biomimetic methods, first by soaking the metal alloys in simulated body fluid (SBF) solution for 18, 24, and 36 hours. The immersion in the SBF solution produced white coat on the surface of the metal alloy. The layers formed were analyzed by scanning electron microscope (SEM) and characterized by x-ray diffractometer (XRD). Based on the SEM results of 36 hours treatment, the morphology of apatite crystal formed fine grains. According to XRD result, there were HAp peaks at angles 2θ 31.86, 32.25, dan 39.48. However, there were also CaCO3 peaks at angles 2θ 29.46, 36.04, and 46.79. It indicated the pure HAp is not yet formed.
Method of manufacture of atomically thin boron nitride
Zettl, Alexander K
2013-08-06
The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
NASA Astrophysics Data System (ADS)
Malyutina, Yu. N.; Bataev, A. A.; Mali, V. I.; Anisimov, A. G.; Shevtsova, L. I.
2015-10-01
A possibility of titanium and nickel-based alloys composite materials formation using combination of explosive welding and spark plasma sintering technologies was demonstrated in the current research. An employment of interlayer consisting of copper and tantalum thin plates makes possible to eliminate a contact between metallurgical incompatible titanium and nickel that are susceptible to intermetallic compounds formation during their interaction. By the following spark plasma sintering process the bonding has been received between titanium and titanium alloy VT20 through the thin powder layer of pure titanium that is distinguished by low defectiveness and fine dispersive structure.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Malyutina, Yu. N., E-mail: iuliiamaliutina@gmail.com; Bataev, A. A., E-mail: bataev@adm.nstu.ru; Shevtsova, L. I., E-mail: edeliya2010@mail.ru
A possibility of titanium and nickel-based alloys composite materials formation using combination of explosive welding and spark plasma sintering technologies was demonstrated in the current research. An employment of interlayer consisting of copper and tantalum thin plates makes possible to eliminate a contact between metallurgical incompatible titanium and nickel that are susceptible to intermetallic compounds formation during their interaction. By the following spark plasma sintering process the bonding has been received between titanium and titanium alloy VT20 through the thin powder layer of pure titanium that is distinguished by low defectiveness and fine dispersive structure.
Process for making whiskers, fibers and flakes of transition metal compounds
Bamberger, Carlos E.
1992-01-01
A process for making titanium and chromium nitrides of known morphology by reacting potassium titanate and chromium oxide in the gas phase with NH.sub.3. The products exhibit the same morphology as the starting material.
Process for making whiskers, fibers and flakes of transition metal compounds
Bamberger, C.E.
1992-06-02
A process for making titanium and chromium nitrides of known morphology by reacting potassium titanate and chromium oxide in the gas phase with NH[sub 3]. The products exhibit the same morphology as the starting material.
Ultra-thin ohmic contacts for p-type nitride light emitting devices
Raffetto, Mark [Raleigh, NC; Bharathan, Jayesh [Cary, NC; Haberern, Kevin [Cary, NC; Bergmann, Michael [Chapel Hill, NC; Emerson, David [Chapel Hill, NC; Ibbetson, James [Santa Barbara, CA; Li, Ting [Ventura, CA
2012-01-03
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.
Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold
Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume
2016-01-01
Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired. PMID:27934890
Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold.
Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume
2016-12-09
Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired.
Structural tuning of residual conductivity in highly mismatched III-V layers
Han, Jung; Figiel, Jeffrey J.
2002-01-01
A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
NASA Astrophysics Data System (ADS)
Seifitokaldani, Ali
In this project, titanium oxy-nitride (TiOxN y) has been studied as a new non-noble electrocatalyst for the oxygen reduction reaction (ORR). A comprehensive comparison between four different sol-gel methods was carried out to evaluate the physicochemical and electrochemical properties of the produced electro-catalysts. Among them, a new urea-based sol-gel method (simply called U method) is introduced to prepare TiOxNy at a fairly low temperature and duration, with higher electro-catalytic activity for the ORR. The prepared electro-catalysts with different N/O ratios showed different properties from a less conductive behavior in oxygen-rich (low N/O ratio) materials to more conductive electro-catalyst behavior in nitrogen-rich (high N/O ratio) oxy-nitrides, respectively. Generally, electro-catalysts prepared by the U method had more titanium nitride in their structures than the electro-catalysts prepared by the other methods. Nevertheless, heat treatment had a key role in this phase transferring from having high oxide structure to high nitride structure. According to the elemental analysis done by energy dispersive spectroscopy (EDS), nitrogen percentage in the bulk material increased from 9 to 24 percent by increasing the temperature from 700 to 1100 °C, while the oxygen percentage was decreasing inversely. In addition, based on the X-ray diffraction (XRD) data, in the case of U method, the TiN characteristic peaks were obvious, even at lower temperatures. Increasing the temperature also made the peaks much sharper indicating the growth of the crystallite size. The calculated crystallite size showed the crystallite size of samples prepared by U method (20 to 40 nm) was almost in the same range of the TiN crystallite size, but the crystallite size of the samples prepared by the other sol-gel methods (40 to 60 nm) was in the same range of the TiO2 crystallite size. Scanning electron microscopy (SEM) and B.E.T. surface area analyzer were used to evaluate the particle size and surface area of different samples, respectively. They indicated a smaller particle size and a higher surface area in the electro-catalysts produced by the U method. Besides the aforementioned physicochemical characterizations, cyclic voltammetry (CV), polarization, and electrochemical impedance spectroscopy (EIS) were used to evaluate the electrochemical properties of the electro-catalysts. Obtained Tafel slope, exchange current density and onset potential revealed that the electro-catalyst prepared by the U method which was annealed at 1100 °C, had the best electro-catalytic activity among all other samples with Tafel slope of -203 mV/decade, exchange current density around 4E-04 mA/mg and the onset potential close to 0.8 volt vs. NHE (normal hydrogen electrode). EIS measurements also supported this assertion through revealing the highest specific capacitance (˜ 3.3 F/g). This result was in agreement with the highest B.E.T. surface area and the lowest charge transfer resistance exhibited by this electro-catalyst among the other samples. Stability is one of the determinant factors in selecting an electro-catalyst for the ORR. In this regard, ICP-TOF-MS was used to evaluate the chemical stability of the prepared electro-catalysts under corrosive acidic environment, by measuring the concentration of the dissolved titanium after a certain time. Heretofore, measuring the dissolved metal concentration by ICP-TOF-MS was done just to evaluate its chemical stability. However, in this project this technique was also used during the CV, to evaluate the electro-catalyst's electrochemical stability as well, which is more realistic and similar to the PEMFC's working condition. Stability of the best electrocatalyst with the highest catalytic activity (prepared by the U method) was better than the commercially used Pt/C electro-catalyst, both chemically and electrochemically. Electrochemical stability of the prepared electro-catalysts has also been studied at a high oxidizing potential (more than 2 volts vs. NHE). X-ray Photoelectron Spectroscopy (XPS) showed that the nitrogen amount on the surface of the electro-catalyst decreased from 11 % before the oxidation to 5 % after the oxidation, whereas the catalytic activity for the ORR decreased after the oxidation. Thus, decreasing the titanium nitride's amount in the titanium oxy-nitride surface reduced its catalytic activity. In the second phase of this project, electro-catalytic activity of the titanium nitride for the ORR was investigated via a density functional theory (DFT) computation. To the best of our knowledge, there is no theoretical and computational quantum chemistry study of the transition metal's nitride as the electro-catalyst in PEM fuel cells. ORR was considered to take place in three different sequential steps namely oxygen adsorption, hydroxide production and water desorption. Based on the XRD results, TiN(111) and TiN(200) were considered as the two major facets of the TiN. Simulation was done by the Vienna ab initio Simulation Package (VASP) based on the Plane-Wave basis sets and periodic boundary condition, while the PBE exchangecorrelational functional was used to describe the interactions among electrons. Comparing the adsorption energies proved existence of a strong dissociative adsorption of oxygen on the TiN(111) regardless of the adsorption sites. However, because of a relatively strong OH adsorption, TiN(111) loses the active sites to proceed the ORR, while on the TiN(200) surface, water production and desorption came about easily. Electron density of states (DOS) was obtained to calculate the d-band center and fractional filling in different situations. Considering two possible bridge and top adsorption sites on the TiN(200), these information indicated the hydroxide production and water desorption as the rate determining steps for the ORR in bridge and top sites, respectively. Therefore, it was shown that the TiN, specially TiN(200) had exhibited good electro-catalytic activity for the ORR. Losing this TiN amount from the titanium oxy-nitride's surface might be responsible for the decrease of the electro-catalytic activity of the titanium oxy-nitride for the ORR.
NASA Astrophysics Data System (ADS)
Thanawala, Sachin
Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.
Low pressure growth of cubic boron nitride films
NASA Technical Reports Server (NTRS)
Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)
1997-01-01
A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.
NASA Astrophysics Data System (ADS)
Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.
2018-05-01
A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.
Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering
NASA Astrophysics Data System (ADS)
Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.
2016-08-01
The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sowers, A.T.; Christman, J.A.; Bremser, M.D.
1997-10-01
Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO{sub 2} layer and etched to form arrays of either 1, 3, or 5 {mu}m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 {mu}m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10{endash}100 nA and required grid voltages rangingmore » from 20{endash}110 V. The grid currents were typically 1 to 10{sup 4} times the collector currents. {copyright} {ital 1997 American Institute of Physics.}« less
Shockwave Processing of Composite Boron and Titanium Nitride Powders
NASA Astrophysics Data System (ADS)
Beason, Matthew T.; Gunduz, I. Emre; Mukasyan, Alexander S.; Son, Steven F.
2015-06-01
Shockwave processing of powders has been shown to initiate reactions between condensed phase reactants. It has been observed that these reactions can occur at very short timescales, resulting in chemical reactions occurring at a high pressure state. These reactions have the potential to produce metastable phases. Kinetic limitations prevent gaseous reactants from being used in this type of synthesis reaction. To overcome this limitation, a solid source of gaseous reactants must be used. An example of this type of reaction is the nitrogen exchange reaction (e.g. B + TiN, B + Si3N4 etc.). In these reactions nitrogen is ``carried'' by a material that can be then reduced by the second reactant. This work explores the possibility of using nitrogen exchange reactions to synthesize the cubic phase of boron nitride (c-BN) through shockwave processing of ball milled mixtures of boron and titanium nitride. The heating from the passage of the shock wave (pore collapse, plastic work, etc.) combined with thermochemical energy from the reaction may provide a means to synthesize c-BN. This material is based upon work supported by the Department of Energy, National Nuclear Security Administration, under Award Number(s) DE-NA0002377. National Defense Science & Engineering Graduate Fellowship (NDSEG), 32 CFR 168a.
NASA Astrophysics Data System (ADS)
Liu, Gen; Pan, Zhanchang; Li, Wuyi; Yu, Ke; Xia, Guowei; Zhao, Qixiang; Shi, Shikun; Hu, Guanghui; Xiao, Chumin; Wei, Zhigang
2017-07-01
Titanium nickel nitride (TiNiN) decorated three-dimensional (3D) carbon nanotubes-reduced graphene oxide (CNT-rGO), a fancy 3D platinum (Pt)-based catalyst hybrid support, is prepared by a solvothermal process followed by a nitriding process, which is tested as anodic catalyst support for the methanol oxidation reaction (MOR). The structure, morphology and composition of the synthesized TiNiN/CNT-rGO exhibits a uniform particle dispersion with high purity and interpenetrating 3D network structure. Notably, Pt/TiNiN/CNT-rGO catalyst exhibits significantly improved catalytic activity and durability for methanol oxidation in comparison with Pt/CNT-rGO and conventional Pt/C (JM). The outstanding electrochemical performance was attributed to structure and properties. That is, the 3D CNT-rGO provided a fast transport network for charge-transfer and mass-transfer as well as TiNiN NPs with good synergistic effect and the strong electronic coupling between different domains in TiNiN/CNT-rGO, thus the catalytic activity of the novel catalyst is greatly improved. These results evidences 3D TiNiN/CNT-rGO as a promising catalyst support for a wide range of applications in fuel cells.
NASA Astrophysics Data System (ADS)
Ramezani, Amir Hoshang; Habibi, Maryam; Ghoranneviss, Mahmood
2014-08-01
In this research, for the first time, we synthesize magnesium nitride thin films on 304-type stainless steel substrates using a Mather-type (2 kJ) plasma focus (PF) device. The films of magnesium nitride are coated with different number of focus shots (like 15, 25 and 35) at a distance of 8 cm from the anode tip and at 0° angular position with respect to the anode axis. For investigation of the structural properties and surface morphology of magnesium nitride films, we utilized the X-ray diffractometer (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) analysis, respectively. Also, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. Furthermore, Vicker's microhardness is used to study the mechanical properties of the deposited films. The results show that the degree of crystallinity of deposited thin films (from XRD), the average size of particles and surface roughness (from AFM), crystalline growth of structures (from SEM) and the hardness values of the films depend on the number of focus shots. The EDX analysis demonstrates the existence of the elemental composition of magnesium in the deposited samples.
Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C
NASA Technical Reports Server (NTRS)
Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.
1988-01-01
The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.
NASA Astrophysics Data System (ADS)
See, Tian Long; Chantzis, Dimitrios; Royer, Raphael; Metsios, Ioannis; Antar, Mohammad; Marimuthu, Sundar
2017-09-01
This paper presents an investigation on the titanium aluminium nitride (TiAlN) coating removal from tungsten carbide (WC-Co) substrate using a diode pump solid state (DPSS) ultraviolet (UV) laser with maximum average power of 90 W, wavelength of 355 nm and pulse width of 50 ns. The TiAlN coating of 1.5 μm thickness is removed from the WC-Co substrate with laser fluence of 2.71 J/cm2 at 285.6 number of pulses (NOP) and with NOP of 117.6 at 3.38 J/cm2 fluence. Titanium oxide formation was observed on the ablated surface due to the re-deposition of ablated titanium residue and also attributed to the high temperature observed during the laser ablation process. Crack width of around 0.2 μm was observed over both TiAlN coating and WC-Co substrate. The crack depth ranging from 1 to 10 μm was observed and is related to the thickness of the melted carbide. The crack formation is a result of the thermal induced stresses caused by the laser beam interaction with the material as well as the higher thermal conductivity of cobalt compared to WC. Two cleaning regions are observed and is a consequence of the Gaussian distribution of the laser beam energy. The surface roughness of the ablated WC-Co increased with increasing laser fluence and NOP.
Infrared Dielectric Properties of Low-stress Silicon Nitride
NASA Technical Reports Server (NTRS)
Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.
2012-01-01
Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
Electrochemical Solution Growth of Magnetic Nitrides
DOE Office of Scientific and Technical Information (OSTI.GOV)
Monson, Todd C.; Pearce, Charles
Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or asmore » inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.« less
A Review on High-Speed Machining of Titanium Alloys
NASA Astrophysics Data System (ADS)
Rahman, Mustafizur; Wang, Zhi-Gang; Wong, Yoke-San
Titanium alloys have been widely used in the aerospace, biomedical and automotive industries because of their good strength-to-weight ratio and superior corrosion resistance. However, it is very difficult to machine them due to their poor machinability. When machining titanium alloys with conventional tools, the tool wear rate progresses rapidly, and it is generally difficult to achieve a cutting speed of over 60m/min. Other types of tool materials, including ceramic, diamond, and cubic boron nitride (CBN), are highly reactive with titanium alloys at higher temperature. However, binder-less CBN (BCBN) tools, which do not have any binder, sintering agent or catalyst, have a remarkably longer tool life than conventional CBN inserts even at high cutting speeds. In order to get deeper understanding of high speed machining (HSM) of titanium alloys, the generation of mathematical models is essential. The models are also needed to predict the machining parameters for HSM. This paper aims to give an overview of recent developments in machining and HSM of titanium alloys, geometrical modeling of HSM, and cutting force models for HSM of titanium alloys.
Laser sintered thin layer graphene and cubic boron nitride reinforced nickel matrix nanocomposites
NASA Astrophysics Data System (ADS)
Hu, Zengrong; Tong, Guoquan
2015-10-01
Laser sintered thin layer graphene (Gr)-cubic boron nitride (CBN)-Ni nanocomposites were fabricated on AISI 4140 plate substrate. The composites fabricating process, composites microstructure and mechanical properties were studied. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy were employed to study the micro structures and composition of the composites. XRD and Raman tests proved that graphene and CBN were dispersed in the nanocomposites. Nanoindentation test results indicate the significant improvements were achieved in the composites mechanical properties.
NASA Astrophysics Data System (ADS)
Shi, Huan; Feng, Ke-qin; Wang, Hai-bo; Chen, Chang-hong; Zhou, Hong-ling
2016-05-01
To effectively reuse high-titanium blast furnace slag (TS), foam glass-ceramics were successfully prepared by powder sintering at 1000°C. TS and waste glass were used as the main raw materials, aluminium nitride (AlN) as the foaming agent, and borax as the fluxing agent. The influence of the amount of AlN added (1wt%-5wt%) on the crystalline phases, microstructure, and properties of the produced foam glass-ceramics was studied. The results showed that the main crystal phases were perovskite, diopside, and augite. With increasing AlN content, a transformation from diopside to augite occurred and the crystallinity of the pyroxene phases slightly decreased. Initially, the average pore size and porosity of the foam glass-ceramics increased and subsequently decreased; similarly, their bulk density and compressive strength decreased and subsequently increased. The optimal properties were obtained when the foam glass-ceramics were prepared by adding 4wt% AlN.
NASA Astrophysics Data System (ADS)
Achour, Amine; Porto, Raul Lucio; Soussou, Mohamed-Akram; Islam, Mohammad; Boujtita, Mohammed; Aissa, Kaltouma Ait; Le Brizoual, Laurent; Djouadi, Abdou; Brousse, Thierry
2015-12-01
Electrochemical capacitors (EC) in the form of packed films can be integrated in various electronic devices as power source. A fabrication process of EC electrodes, which is compatible with micro-fabrication, should be addressed for practical applications. Here, we show that titanium nitride films with controlled porosity can be deposited on flat silicon substrates by reactive DC-sputtering for use as high performance micro-supercapacitor electrodes. A superior volumetric capacitance as high as 146.4 F cm-3, with an outstanding cycling stability over 20,000 cycles, was measured in mild neutral electrolyte of potassium sulfate. The specific capacitance of the films as well as their capacitance retentions were found to depend on thickness, porosity and surface chemistry of electrodes. The one step process used to fabricate these TiN electrodes and the wide use of this material in the field of semiconductor technology make it promising for miniaturized energy storage systems.
Excimer laser decoating of chromium titanium aluminium nitride to facilitate re-use of cutting tools
NASA Astrophysics Data System (ADS)
Sundar, M.; Whitehead, D.; Mativenga, P. T.; Li, L.; Cooke, K. E.
2009-11-01
This work reports on the technical feasibility and establishment of a process window for removing chromium titanium aluminium nitride (CrTiAlN) coating from steel substrates by laser irradiation. CrTiAlN coating has high hardness and oxidation resistance, with applications for use with cutting tools. The motivation for removing such coatings is to facilitate re-use of tooling by enabling regrinding or reshaping of a worn tool and hence promote sustainable material usage. In this work, laser decoating was performed using an excimer laser. The effect of laser fluence, number of pulses, frequency, scanning speed and laser beam overlap on the decoating performance was investigated in detail. The minimum threshold laser fluence for removing the CrTiAlN coating was lower than that of the steel substrate and this factor is beneficial in controlling the decoating process. Successful laser removal of CrTiAlN coating without noticeable damage to the steel substrate was demonstrated.
Preparation of Titanium nitride nanomaterials for electrode and application in energy storage
NASA Astrophysics Data System (ADS)
Tang, Shun; Cheng, Qi; Zhao, Jinxing; Liang, Jiyuan; Liu, Chang; Lan, Qian; Cao, Yuan-Cheng; Liu, Jiyan
The Titanium nitride was made by the carbamide and titanic chloride precursors. XRD results indicate that the precursor ratio N:Ti 3:1 leads to higher crystallinity. SEM and EDX demonstrated that Ti and N elements were distributed uniformly with the ratio of 1:1. The TiN used as the electrode material for supercapacitor was also studied. The specific capacities were changed from 407 F.g-1 to 385 F.g-1, 364 F.g-1 and 312 F.g-1, when the current densities were changed from 1 A.g-1 to 2 A.g-1, 5 A.g-1 and 10 A.g-1, respectively. Chronopotentiometry tests showed high coulombic efficiency. Cycling performance of the TiN electrode was evaluated by CV at a scanning rate of 50 mV.s-1 for 20,000 cycles and there was about 9.8% loss. These results indicate that TiN is a promising electrode material for the supercapacitors.
Effect of Thickness on the Structure, Composition and Properties of Titanium Nitride Nano-Coatings
DOE Office of Scientific and Technical Information (OSTI.GOV)
Martinez, Gustavo; Shutthanandan, V.; Thevuthasan, Suntharampillai
2014-05-05
Titanium nitride (TiNx) coatings were grown by magnetron sputtering onto Si(1 0 0) substrates by varying time of deposition to produce coatings with variable thickness (dTiN) in the range of 20-120 nm. TiNx coatings were characterized by studying their structure, composition, and mechanical properties. Nuclear reaction analysis (NRA) combined with Rutherford backscattering spectrometry (RBS) analyses indicate that the grown coatings were stoichiometric TiN. Grazing incidence X-ray diffraction (GIXRD) measurements indicate that the texturing of TiN coatings changes as a function of dTiN. The (1 1 1) and (0 0 2) peaks appear initially; (1 1 1) becomes intense while (0more » 0 2) disappears with increasing dTiN. Dense, columnar grain structure was evident for all the coatings in electron microscopy analyses. The residual stress for TiN coatings with dTiN~120 nm was 1.07 GPa in compression while thinner samples exhibit higher values of stress.« less
Meijs, S; Alcaide, M; Sørensen, C; McDonald, M; Sørensen, S; Rechendorff, K; Gerhardt, A; Nesladek, M; Rijkhoff, N J M; Pennisi, C P
2016-10-01
The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.
Stanković, Dalibor M; Ognjanović, Miloš; Martin, Fabian; Švorc, Ľubomir; Mariano, José F M L; Antić, Bratislav
2017-12-15
In the present paper, the electrochemical behavior and the properties of two modified glassy carbon (GC) electrodes used for quantification of gallic acid in sweet wines were compared. A comparative study was conducted between titanium nitride- or wolfram carbide-doped reduced graphene oxide, labeled as TNrGO and WCrGO, respectively, modified GC electrodes, which are promising composite nanomaterials for electroanalytical applications. For the first time, WCrGO was synthesized and its electroanalytical properties compared with those of TNrGO. Results showed that the proposed materials exhibited enhanced characteristics, e.g., low limits of detection (1.1 μM and 3.1 μM for TNrGO and WCrGO, respectively), wide linear ranges (for TNrGO 4.5-76 μM and for WCrGO 10-100 μM), low adsorption, and low background current, which make them promising candidates for electrochemical sensing applications. Copyright © 2017 Elsevier Inc. All rights reserved.
Low Noise Titanium Nitride KIDs for SuperSpec: A Millimeter-Wave On-Chip Spectrometer
NASA Astrophysics Data System (ADS)
Hailey-Dunsheath, S.; Shirokoff, E.; Barry, P. S.; Bradford, C. M.; Chapman, S.; Che, G.; Glenn, J.; Hollister, M.; Kovács, A.; LeDuc, H. G.; Mauskopf, P.; McKenney, C.; O'Brient, R.; Padin, S.; Reck, T.; Shiu, C.; Tucker, C. E.; Wheeler, J.; Williamson, R.; Zmuidzinas, J.
2016-07-01
SuperSpec is a novel on-chip spectrometer we are developing for multi-object, moderate resolution (R = 100-500), large bandwidth ({˜ }1.65:1), submillimeter and millimeter survey spectroscopy of high-redshift galaxies. The spectrometer employs a filter bank architecture, and consists of a series of half-wave resonators formed by lithographically-patterned superconducting transmission lines. The signal power admitted by each resonator is detected by a lumped element titanium nitride (TiN) kinetic inductance detector operating at 100-200 MHz. We have tested a new prototype device that achieves the targeted R=100 resolving power, and has better detector sensitivity and optical efficiency than previous devices. We employ a new method for measuring photon noise using both coherent and thermal sources of radiation to cleanly separate the contributions of shot and wave noise. We report an upper limit to the detector NEP of 1.4× 10^{-17} W Hz^{-1/2}, within 10 % of the photon noise-limited NEP for a ground-based R=100 spectrometer.
Shock-induced reaction synthesis of cubic boron nitride
NASA Astrophysics Data System (ADS)
Beason, M. T.; Pauls, J. M.; Gunduz, I. E.; Rouvimov, S.; Manukyan, K. V.; Matouš, K.; Son, S. F.; Mukasyan, A.
2018-04-01
Here, we report ultra-fast (0.1-5 μs) shock-induced reactions in the 3B-TiN system, leading to the direct synthesis of cubic boron nitride, which is extremely rare in nature and is the second hardest material known. Composite powders were produced through high-energy ball milling to provide intimate mixing and subsequently shocked using an explosive charge. High-resolution transmission electron microscopy and X-ray diffraction confirm the formation of nanocrystalline grains of c-BN produced during the metathetical reaction between boron and titanium nitride. Our results illustrate the possibility of rapid reactions enabled by high-energy ball milling possibly occurring in the solid state on incredibly short timescales. This process may provide a route for the discovery and fabrication of advanced compounds.
Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P.
2016-01-01
Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time. PMID:27013949
NASA Technical Reports Server (NTRS)
Cho, Y. C.; George, Thomas; Norvig, Peter (Technical Monitor)
1999-01-01
Research into advanced pressure sensors using fiber-optic technology is aimed at developing compact size microphones. Fiber optic sensors are inherently immune to electromagnetic noise, and are very sensitive, light weight, and highly flexible. In FY 98, NASA researchers successfully designed and assembled a prototype fiber-optic microphone. The sensing technique employed was fiber optic Fabry-Perot interferometry. The sensing head is composed of an optical fiber terminated in a miniature ferrule with a thin, silicon-microfabricated diaphragm mounted on it. The optical fiber is a single mode fiber with a core diameter of 8 micron, with the cleaved end positioned 50 micron from the diaphragm surface. The diaphragm is made up of a 0.2 micron thick silicon nitride membrane whose inner surface is metallized with layers of 30 nm titanium, 30 nm platinum, and 0.2 micron gold for efficient reflection. The active sensing area is approximately 1.5 mm in diameter. The measured differential pressure tolerance of this diaphragm is more than 1 bar, yielding a dynamic range of more than 100 dB.
A Low-Noise NbTiN Hot Electron Bolometer Mixer
NASA Technical Reports Server (NTRS)
Tong, C. Edward; Stern, Jeffrey; Megerian, Krikor; LeDuc, Henry; Sridharan, T. K.; Gibson, Hugh; Blundell, Raymond
2001-01-01
Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.
NASA Astrophysics Data System (ADS)
Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.
2018-01-01
The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.
Correlation of Critical Temperatures and Electrical Properties in Titanium Films
NASA Astrophysics Data System (ADS)
Gandini, C.; Lacquaniti, V.; Monticone, E.; Portesi, C.; Rajteri, M.; Rastello, M. L.; Pasca, E.; Ventura, G.
Recently transition-edge sensors (TES) have obtained an increasing interest as light detectors due to their high energy resolution and broadband response. Titanium (Ti), with transition temperature up to 0.5 K, is among the suitable materials for TES application. In this work we investigate Ti films obtained from two materials of different purity deposited by e-gun on silicon nitride. Films with different thickness and deposition substrate temperature have been measured. Critical temperatures, electrical resistivities and structural properties obtained from x-ray are related to each other.
Peroxy-Titanium Complex-based inks for low temperature compliant anatase thin films.
Shabanov, N S; Asvarov, A Sh; Chiolerio, A; Rabadanov, K Sh; Isaev, A B; Orudzhev, F F; Makhmudov, S Sh
2017-07-15
Stable highly crystalline titanium dioxide colloids are of paramount importance for the establishment of a solution-processable library of materials that could help in bringing the advantages of digital printing to the world of photocatalysis and solar energy conversion. Nano-sized titanium dioxide in the anatase phase was synthesized by means of hydrothermal methods and treated with hydrogen peroxide to form Peroxy-Titanium Complexes (PTCs). The influence of hydrogen peroxide on the structural, optical and rheological properties of titanium dioxide and its colloidal solutions were assessed and a practical demonstration of a low temperature compliant digitally printed anatase thin film given. Copyright © 2017 Elsevier Inc. All rights reserved.
Tailoring the structural and optical properties of TiN thin films by Ag ion implantation
NASA Astrophysics Data System (ADS)
Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.
2016-12-01
Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.
Zinc nitride thin films: basic properties and applications
NASA Astrophysics Data System (ADS)
Redondo-Cubero, A.; Gómez-Castaño, M.; García Núñez, C.; Domínguez, M.; Vázquez, L.; Pau, J. L.
2017-02-01
Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250°C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.
Nucleophilic stabilization of water-based reactive ink for titania-based thin film inkjet printing
NASA Astrophysics Data System (ADS)
Gadea, C.; Marani, D.; Esposito, V.
2017-02-01
Drop on demand deposition (DoD) of titanium oxide thin films (<500 nm) is performed via a novel titanium-alkoxide-based solution that is tailored as a reactive ink for inkjet printing. The ink is developed as water-based solution by a combined use of titanium isopropoxide and n-methyldiethanolamine (MDEA) used as nucleophilic ligand. The function of the ligand is to control the fast hydrolysis/condensation reactions in water for the metal alkoxide before deposition, leading to formation of the TiO2 only after the jet process. The evolution of the titanium-ligand interactions at increasing amount of MDEA is here elucidated in terms of long term stability. The ink printability parameter (Z) is optimized, resulting in a reactive solution with printability, Z, >1, and chemical stability up to 600 h. Thin titanium oxide films (<500 nm) are proved on different substrates. Pure anatase phase is obtained after annealing at low temperature (ca. 400 °C).
NASA Astrophysics Data System (ADS)
Charatan, R. M.; Gross, M. E.; Eaglesham, D. J.
1994-10-01
The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor provides us with a new chemical vapor deposition route to TiN films that offer an interesting contrast to films deposited from Ti(IV) precursors. Film depositions were carried out by introducing CPCHT, with H2 carrier gas, into the downstream region of a NH3, N2, H2, or mixed H2/N2 plasma. Low resistivity (100-250 micro-ohm cm) nitrogen-rich TiN films with little carbon or oxygen incorporation and good conformality were deposited with activated N2 or NH3 at deposition temperatures of 300-600 C, inclusive. Mixed H2/N2 plasmas resulted in more stoichiometric TiN films with similar properties. The most striking feature of these films is the absence of columnar grain growth, in contrast to TiN films deposited using TiCl4 or Ti(NR(2))(4). Although the film texture was influenced by the plasma gas, the average grain size of the films deposited using activated N2 and NH3 was similar. The TiN films that we deposited were effective diffusion barriers between aluminum and silicon up to 575 C. Depositions using activated H2 resulted in films with significantly less carbon than CPCHT, but still having a minimum of 2.7:1 C:Ti. The lower oxidation state of the precursor did not facilitate the deposition of a Ti-rich film. No depositions were observed with any of the reactant gases in the absence of plasmas activation.
Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration
NASA Technical Reports Server (NTRS)
Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.
2003-01-01
Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.
Meng, Xin; Byun, Young-Chul; Kim, Harrison S.; Lee, Joy S.; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung
2016-01-01
With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique. PMID:28774125
Development and Verification of Sputtered Thin-Film Nickel-Titanium (NiTi) Shape Memory Alloy (SMA)
2015-08-01
Shape Memory Alloy (SMA) by Cory R Knick and Christopher J Morris Approved for public release; distribution unlimited...Laboratory Development and Verification of Sputtered Thin-Film Nickel-Titanium (NiTi) Shape Memory Alloy (SMA) by Cory R Knick and Christopher
Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films
NASA Astrophysics Data System (ADS)
Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.
2003-06-01
White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.
NASA Technical Reports Server (NTRS)
Brainard, W. A.; Wheeler, D. R.
1979-01-01
Friction and wear experiments on 440C steel surfaces that were rf sputtered with titanium carbide when a small percentage of nitrogen was added to the plasma were conducted. Both X-ray photoelectron spectroscopy and X-ray diffraction were used to analyze the resultant coatings. Results indicate that the small partial pressure of nitrogen (approximately 0.5 percent) markedly improves the adherence, friction, and wear properties when compared with coatings applied to sputter-etched surfaces, oxidized surfaces, or in the presence of a small oxygen partial pressure. The improvements are related to the formation of an interface containing a mixture of the nitrides of titanium and iron, which are harder than their corresponding oxides.
Qin, Ping; Li, Xingxing; Gao, Biao; Fu, Jijiang; Xia, Lu; Zhang, Xuming; Huo, Kaifu; Shen, Wenli; Chu, Paul K
2018-05-10
Titanium nitride (TiN) is an attractive electrode material in fast charging/discharging supercapacitors because of its excellent conductivity. However, the low capacitance and mechanical brittleness of TiN restricts its further application in flexible supercapacitors with high energy density. Thus, it is still a challenge to rationally design TiN electrodes with both high electrochemical and mechanical properties. Herein, the hierarchical TiN nanoparticles-assembled nanopillars (H-TiN NPs) array as binder free electrodes were obtained by nitriding of hierarchical titanium dioxide (TiO2) nanopillars, which was produced by a simple hydrothermal treatment of anodic TiO2 nanotubes (NTs) array in water. The porous TiN nanoparticles connected to each other to form ordered nanopillar arrays, effectively providing larger specific surface area and more active sites for charge storage. The H-TiN NPs delivered a high volumetric capacitance of 120 F cm-3 at 0.83 A cm-3, which is better than that of TiN NTs arrays (69 F cm-3 at 0.83 A cm-3). After assembling into all-solid-state devices, the H-TiN NPs based supercapacitors exhibited outstanding volumetric capacitance of 5.9 F cm-3 at 0.02 A cm-3 and a high energy density of 0.53 mW h cm-3. Our results reveal a new strategy to optimize the supercapacitive performance of metal nitrides.
Durable silver coating for mirrors
Wolfe, Jesse D.; Thomas, Norman L.
2000-01-01
A durable multilayer mirror includes reflective layers of aluminum and silver and has high reflectance over a broad spectral range from ultraviolet to visible to infrared. An adhesion layer of a nickel and/or chromium alloy or nitride is deposited on an aluminum surface, and a thin layer of silver is then deposited on the adhesion layer. The silver layer is protected by a passivation layer of a nickel and/or chromium alloy or nitride and by one or more durability layers made of metal oxides and typically a first layer of metal nitride. The durability layers may include a composite silicon aluminum nitride and an oxinitride transition layer to improve bonding between nitride and oxide layers.
The effect of plasma surface treatment on the bioactivity of titanium implant materials (in vitro)
Abdelrahim, Ramy A.; Badr, Nadia A.; Baroudi, Kusai
2016-01-01
Background: The surface of an implantable biomaterial plays a very important role in determining the biocompatibility, osteoinduction, and osteointegration of implants because it is in intimate contact with the host bone and soft tissues. Objective: This study was aimed to assess the effect of plasma surface treatment on the bioactivity of titanium alloy (Ti–6Al–4V). Materials and Methods: Fifteen titanium alloy samples were used in this study. The samples were divided into three groups (with five samples in each group). Five samples were kept untreated and served as control (group A). Another five plasma samples were sprayed for nitrogen ion implantation on their surfaces (group B) and the last five samples were pre-etched with acid before plasma treatment (group C). All the investigated samples were immersed for 7 days in Hank's balanced salt solution (HBSS) which was used as a simulating body fluid (SBF) at pH 7.4 and 37°C. HBSS was renewed every 3 days. The different surfaces were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDXA), and Fourier Transformation Infrared Spectroscopy (FTIR). Results: Nitriding of Ti-alloy samples via plasma nitrogen ion implantation increased the bioactivity of titanium. Moreover, the surface topography affected the chemical structure of the formed apatite. Increasing the surface roughness enhanced the bioactivity of the implant material. Conclusions: Nitridation can be exploited as an effective way to promote the formation of bone-like material on the implant surface. PMID:27011927
Conversion treatment of thin titanium layer deposited on carbon steel
NASA Astrophysics Data System (ADS)
Benarioua, Younes; Wendler, Bogdan; Chicot, Didier
2018-05-01
The present study has been conducted in order to obtain titanium carbide layer using a conversion treatment consisting of two main steps. In the first step a thin pure titanium layer was deposited on 120C4 carbon steel by PVD. In the second step, the carbon atoms from the substrate diffuse to the titanium coating due to a vacuum annealing treatment and the Ti coating transforms into titanium carbide. Depending on the annealing temperature a partial or complete conversion into TiC is obtained. The hardness of the layer can be expected to differ depending on the processing temperatures. By a systematic study of the hardness as a function of the applied load, we confirm the process of growth of the layer.
Kumar, D Dinesh; Kaliaraj, Gobi Saravanan
2018-01-01
Protecting from wear and corrosion of many medical devices in the biomedical field is an existing scientific challenge. Surface modification with multilayer ZrN/Cu coating was deposited on medical grade stainless steel (SS) and titanium substrates to enhance their surface properties. Structural results revealed that the ZrN/Cu coatings are highly crystalline and uniform microstructure on both the substrates. Dry and wet tribological measurements of the coated titanium substrate exhibit enhanced wear resistance and low friction coefficient due to the improved microstructure. Similarly, the corrosion resistance was exceptionally improved on titanium substrates, resulting from the high inertness of coating to the SBF electrolyte solution. Antibacterial activity and epifluorescence results signify the effective killing of pathogens by means of ion release killing as well as contact killing mechanisms. Copyright © 2017 Elsevier Ltd. All rights reserved.
Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor
NASA Technical Reports Server (NTRS)
Brown, G. A.; Harrap, V.
1971-01-01
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.
2008-12-01
n-propoxide and titanium isopropoxide , were measured with a graduated auto pipet and combined with 45 mL of 2-MOE in a 125 mL flask. The solution...nitrogen (N2). This anneal procedure was used to remove trapped hydrogen from the thin film. Following the anneal, a bi-layer of titanium (Ti) and...dioxide Ti titanium 10 NO. OF COPIES ORGANIZATION 1 ADMNSTR ELEC DEFNS TECHL INFO CTR ATTN DTIC OCP 8725 JOHN J KINGMAN RD STE
Yan, Danhua; Tao, Jing; Kisslinger, Kim; ...
2015-10-13
Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planarmore » hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. As a result, it is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.« less
Thermal insulation for high temperature microwave sintering operations and method thereof
Holcombe, Cressie E.; Dykes, Norman L.; Morrow, Marvin S.
1995-01-01
Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering.
Method of preparing thermal insulation for high temperature microwave sintering operations
Holcombe, Cressie E.; Dykes, Norman L.; Morrow, Marvin S.
1996-01-01
Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering.
Improved damage tolerance of titanium by adhesive lamination
NASA Technical Reports Server (NTRS)
Johnson, W. S.
1982-01-01
Basic damage tolerance properties of Ti-6A1-4V titanium plate can be improved by laminating thin sheets of titanium with adhesives. Compact tension and center cracked tension specimens made from thick plate, thin sheet, and laminated plate (six plies of thin sheet) were tested. The fracture toughness of the laminated plate was 39 percent higher than the monolithic plate. The laminated plate's through the thickness crack growth rate was about 20 percent less than that of the monolithic plate. The damage tolerance life of the surface cracked laminate was 6 to over 15 times the life of a monolithic specimen. A simple method of predicting crack growth in a crack ply of a laminate is presented.
NASA Astrophysics Data System (ADS)
Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.
2018-06-01
Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.
Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates
NASA Astrophysics Data System (ADS)
Zhu, Shiyang; Nakajima, Anri
2007-12-01
Hafnium oxide (HfO2) thin films were deposited on Ge substrates at 300 °C using atomic layer deposition (ALD) with tetrakis(diethylamino)hafnium (termed as TDEAH) as a precursor and water as an oxidant. The deposition rate was estimated to be 0.09 nm/cycle and the deposited HfO2 films have a smooth surface and an almost stoichiometric composition, indicating that the growth follows a layer-by-layer kinetics, similarly to that on Si substrates. Si nitride thin films were also deposited on Ge by ALD using SiCl4 as a precursor and NH3 as an oxidant. Si nitride has a smaller deposition rate of about 0.055 nm/cycle and a larger gate leakage current than HfO2 deposited on Ge by ALD.
NASA Astrophysics Data System (ADS)
Jeon, Jun-Young; Ha, Tae-Jun
2017-08-01
In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.
1972-01-01
Coatings - Normal Spectral Reflectance 67 32 Boron Nitride + Diatomaceous Earth Pigmented Coatings - Normal Spectral Reflectance 69 Notet Figure...Absorptance 106 53* Clay + Titanium Dioxide Plgmented Coatings - Normal Solar Absorptance 107 54 Dlatomaceous Earth ...Plgmented Coatings - Normal Spectral Reflectance 112 55* Dlatomaceous Earth Plgmented Coatings - Normal Solar Absorptance 116 56
How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?
NASA Astrophysics Data System (ADS)
Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani
2017-11-01
In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.
Producing Foils From Direct Cast Titanium Alloy Strip
NASA Technical Reports Server (NTRS)
Stuart, T. A.; Gaspar, T. A.; Sukonnik, I. M.; Semiatan, S. L.; Batawi, E.; Peters, J. A.; Fraser, H. L.
1996-01-01
This research was undertaken to demonstrate the feasibility of producing high-quality, thin-gage, titanium foil from direct cast titanium strip. Melt Overflow Rapid Solidification Technology (MORST) was used to cast several different titanium alloys into 500 microns thick strip, 10 cm wide and up to 3 m long. The strip was then either ground, hot pack rolled or cold rolled, as appropriate, into foil. Gamma titanium aluminide (TiAl) was cast and ground to approximately 100 microns thick foil and alpha-2 titanium aluminide (Ti3AI) was cast and hot pack rolled to approximately 70 microns thick foil. CP Ti, Ti6Al2Sn4Zr2Mo, and Ti22AI23Nb (Orthorhombic), were successfully cast and cold-rolled into good quality foil (less than 125 microns thick). The foils were generally fully dense with smooth surfaces, had fine, uniform microstructures, and demonstrated mechanical properties equivalent to conventionally produced titanium. By eliminating many manufacturing steps, this technology has the potential to produce thin gage, titanium foil with good engineering properties at significantly reduced cost relative to conventional ingot metallurgy processing.
Ceglio, N.M.; Stearns, D.G.; Hawryluk, A.M.; Barbee, T.W. Jr.
1987-08-07
An x-ray beamsplitter which splits an x-ray beam into two coherent parts by reflecting and transmitting some fraction of an incident beam has applications for x-ray interferometry, x-ray holography, x-ray beam manipulation, and x-ray laser cavity output couplers. The beamsplitter is formed of a wavelength selective multilayer thin film supported by a very thin x-ray transparent membrane. The beamsplitter resonantly transmits and reflects x-rays through thin film interference effects. A thin film is formed of 5--50 pairs of alternate Mo/Si layers with a period of 20--250 A. The support membrane is 10--200 nm of silicon nitride or boron nitride. The multilayer/support membrane structure is formed across a window in a substrate by first forming the structure on a solid substrate and then forming a window in the substrate to leave a free-standing structure over the window. 6 figs.
Ceglio, Natale M.; Stearns, Daniel S.; Hawryluk, Andrew M.; Barbee, Jr., Troy W.
1989-01-01
An x-ray beamsplitter which splits an x-ray beam into two coherent parts by reflecting and transmitting some fraction of an incident beam has applications for x-ray interferometry, x-ray holography, x-ray beam manipulation, and x-ray laser cavity output couplers. The beamsplitter is formed of a wavelength selective multilayer thin film supported by a very thin x-ray transparent membrane. The beamsplitter resonantly transmits and reflects x-rays through thin film interference effects. A thin film is formed of 5-50 pairs of alternate Mo/Si layers with a period of 20-250 A. The support membrane is 10-200 nm of silicon nitride or boron nitride. The multilayer/support membrane structure is formed across a window in a substrate by first forming the structure on a solid substrate and then forming a window in the substrate to leave a free-standing structure over the window.
Wiegand, U K; Zhdanov, A; Stammwitz, E; Crozier, I; Claessens, R J; Meier, J; Bos, R J; Bode, F; Potratz, J
1999-06-01
The aim of this multicenter study was to investigate the performance of a new cardiac pacemaker lead with a titanium nitride cathode coated with a copolymer membrane. In particular, the electrophysiological effect of steroid dissolved in this ion-exchange membrane was evaluated by randomized comparison. Ninety-five patients were randomized either to the 1450 T (n = 51) or the 1451 T ventricular lead (n = 45) and received telemeteral VVI(R) pacemakers with identical diagnostic features. Both leads were bipolar, were passively affixed, and had a porous titanium nitride tip with a surface area of 3.5 mm2. The only difference between the two electrodes was 13 micrograms of dexamethasone added to the 1450 Ts membrane coating. Voltage thresholds (VTH) at pulse durations of 0.25, 0.37, and 0.5 ms, lead impedance, and sensing thresholds were measured at discharge, 2 weeks, 1 month, 3 months, and 6 months after implantation. Mean amplitude and the slew rate from three telemetered intracardiac electrograms, chronaxie-rheobase product, and minimum energy consumption were calculated. After a 6-month follow-up, mean voltage thresholds of 0.65 +/- 0.20 V and 0.63 +/- 0.34 were achieved for the 1450 T lead and 1451 T lead, respectively. As a result, a VTH < 1.0 V was obtained in all patients with 1450 T electrodes and in 97.7% of patients with 1451 T leads after 6 months follow-up. In both electrodes, stable VTH was reached 2 weeks after implantation, and no transient rise in threshold was observed. No differences were observed between the steroid and the nonsteroid group in respect to VTH, chronaxie-rheobase product, minimum energy consumption, and potential amplitude and slew rate. In conclusion, safe and efficient pacing at low pulse amplitudes were achieved with both leads. The tip design, independently of the steroid additive, prevented any energy-consuming increases in the voltage threshold.
Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films
NASA Astrophysics Data System (ADS)
Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won
2018-06-01
We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.
Spagnuolo, G; Ametrano, G; D'Antò, V; Rengo, C; Simeone, M; Riccitiello, F; Amato, M
2012-12-01
To evaluate the effects of repeated autoclave sterilization cycles on surface topography of conventional nickel-titanium ( NiTi ) and titanium nitride ( TiN )-coated rotary instruments. A total of 60 NiTi rotary instruments, 30 ProTaper (Dentsply Maillefer) and 30 TiN -coated AlphaKite (Komet/Gebr. Brasseler), were analysed. Instruments were evaluated in the as-received condition and after 1, 5 and 10 sterilization cycles. After sterilization, the samples were observed using scanning electron microscope (SEM), and surface chemical analysis was performed on each instrument with energy dispersive X-ray spectroscopy (EDS). Moreover, the samples were analysed by atomic force microscopy (AFM), and roughness average (Ra) and the root mean square value (RMS) of the scanned surface profiles were recorded. Data were analysed by means of anova followed by Tukey's test. Scanning electron microscope observations revealed the presence of pitting and deep milling marks in all instruments. EDS analysis confirmed that both types of instruments were composed mainly of nickel and titanium, whilst AlphaKite had additional nitride. After multiple autoclave sterilization cycles, SEM examinations revealed an increase in surface alterations, and EDS values indicated changes in chemical surface composition in all instruments. Ra and RMS values of ProTaper significantly increased after 5 (P = 0.006) and 10 cycles (P = 0.002) with respect to the as-received instruments, whilst AlphaKite showed significant differences compared with the controls after 10 cycles (P = 0.03). Multiple autoclave sterilization cycles modified the surface topography and chemical composition of conventional and TiN -coated NiTi rotary instruments. © 2012 International Endodontic Journal.
NASA Astrophysics Data System (ADS)
Faruque, Faisal
The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.
Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications
Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...
2016-11-30
In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.
Surface Modification of C17200 Copper-Beryllium Alloy by Plasma Nitriding of Cu-Ti Gradient Film
NASA Astrophysics Data System (ADS)
Zhu, Y. D.; Yan, M. F.; Zhang, Y. X.; Zhang, C. S.
2018-03-01
In the present work, a copper-titanium film of gradient composition was firstly fabricated by the dual magnetron sputtering through power control and plasma nitriding of the film was then conducted to modify C17200 Cu alloy. The results showed that the prepared gradient Cu-Ti film by magnetron sputtering was amorphous. After plasma nitriding at 650 °C, crystalline Cu-Ti intermetallics appeared in the multi-phase coating, including CuTi2, Cu3Ti, Cu3Ti2 and CuTi. Moreover, even though the plasma nitriding duration of the gradient Cu-Ti film was only 0.5 h, the mechanical properties of the modified Cu surface were obviously improved, with the surface hardness enhanced to be 417 HV0.01, the wear rate to be 0.32 × 10-14 m3/Nm and the friction coefficient to be 0.075 at the load of 10 N, which are all more excellent than the C17200 Cu alloy. In addition, the wear mechanism also changed from adhesion wear for C17200 Cu substrate to abrasive wear for the modified surface.
Preparation of nanocrystalline TiN coated cubic boron nitride powders by a sol-gel process.
Park, Hee S; Umer, M Adeel; Ryu, Ho J; Hong, Soon H
2011-01-01
Cubic boron nitride (cBN) particles coated with 20 wt% nanocrystalline TiN were prepared by coating the surface of cBN particles with TiO2, followed by nitridation with NH3 gas at 900 degrees C. Coating of TiO2 on cBN powders was accomplished by a sol-gel process from a solution of titanium (IV) isopropoxide and anhydrous ethanol. An amorphous TiO(x) layer of 50 nm thickness was homogenously formed on the surface of the cBN particles by the sol-gel process. The amorphous layer was then crystallized to an anatase TiO2 phase through calcination in air at 400 degrees C. The crystallized TiO2 layer was 50 nm in thickness, and the size of TiO2 particles comprising the layer was nearly 10 nm. The TiO2 on cBN surfaces was completely converted into nanocrystalline TiN of uniform particles 20 nm in size on cBN particles by nitridation under flowing NH3 gas.
Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication
NASA Astrophysics Data System (ADS)
Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.
2018-04-01
In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.
Developing Multilayer Thin Film Strain Sensors With High Thermal Stability
NASA Technical Reports Server (NTRS)
Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M., III
2006-01-01
A multilayer thin film strain sensor for large temperature range use is under development using a reactively-sputtered process. The sensor is capable of being fabricated in fine line widths utilizing the sacrificial-layer lift-off process that is used for micro-fabricated noble-metal sensors. Tantalum nitride films were optimized using reactive sputtering with an unbalanced magnetron source. A first approximation model of multilayer resistance and temperature coefficient of resistance was used to set the film thicknesses in the multilayer film sensor. Two multifunctional sensors were fabricated using multilayered films of tantalum nitride and palladium chromium, and tested for low temperature resistivity, TCR and strain response. The low temperature coefficient of resistance of the films will result in improved stability in thin film sensors for low to high temperature use.
NASA Astrophysics Data System (ADS)
Anttila, Severi; Alatarvas, Tuomas; Porter, David A.
2017-12-01
The correlation between simulated weld heat-affected zone microstructures and toughness parameters has been investigated in four intermediate purity 21Cr ferritic stainless steels stabilized with titanium and niobium either separately or in combination. Extensive Charpy V impact toughness testing was carried out followed by metallography including particle analysis using electron microscopy. The results confirmed that the grain size and the number density of particle clusters rich in titanium nitride and carbide with an equivalent circular diameter of 2 µm or more are statistically the most critical factors influencing the ductile-to-brittle transition temperature. Other inclusions and particle clusters, as well as grain boundary precipitates, are shown to be relatively harmless. Stabilization with niobium avoids large titanium-rich inclusions and also suppresses excessive grain growth in the heat-affected zone when reasonable heat inputs are used. Thus, in order to maximize the limited heat-affected zone impact toughness of 21Cr ferritic stainless steels containing 380 to 450 mass ppm of interstitials, the stabilization should be either titanium free or the levels of titanium and nitrogen should be moderated.
NASA Astrophysics Data System (ADS)
Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.
2017-07-01
The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.
Method of preparing thermal insulation for high temperature microwave sintering operations
Holcombe, C.E.; Dykes, N.L.; Morrow, M.S.
1996-07-16
Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering. 1 fig.
Thermal insulation for high temperature microwave sintering operations and method thereof
Holcombe, C.E.; Dykes, N.L.; Morrow, M.S.
1995-09-12
Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering. 1 fig.
NASA Astrophysics Data System (ADS)
Kukreja, Ratandeep Singh
The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the deposition chamber. Hexagonal -- BN thin films are successfully deposited using Diborane (B2H6) (5% in H2), Ammonia (NH3) and H2 as precursor gases in the conventional MPECVD mode with and without the negative DC bias. The quality of h-BN in the films improved with pressure and when NH3 used as the first precursor gas in the deposition chamber. c-BN thin films are successfully deposited using Boron-Trifluoride (BF3) (10% in Argon (Ar)), N2, H2, Ar and Helium (He) gases in the electron cyclotron resonance (ECR) mode of the MPECVD system with negative DC bias. Up-to 66% c-BN in the films is achieved under deposition conditions of lower gas flow rates and higher deposition pressures than that reported in the literature for film deposited by ECR-MPECVD. It is shown that the percentage c-BN in the films correlates with the deposition pressure, BF3/H2 ratio and, negative DC bias during nucleation and growth. Diamond thin films are deposited using 60%Ar, 39% H2 and, 1%CH4 at 600°C, 700°C and 800°C substrate temperatures, measured by an IR pyrometer, on Si substrates pre-treated with 3-6nm diamond sol and 20-40mum diamond slurry. Raman spectroscopy, FTIR, X-Ray diffraction (XRD) and, photo-thermal reflectivity methods are used to characterize the thin films. Residual stresses observed for the diamond thin films deposited in this study are tensile in nature and increased with deposition temperature. Better quality diamond films with lower residual stresses are obtained for films deposited on Si substrate pre-treated with 3-6nm diamond sol. Preliminary results on thermal conductivity, k, suggest that k is directly dependent on the deposition temperature and independent of substrate pre-treatment signifying that the nano-seeding technique can be used to replace conventional surface activation technique for diamond seeding where needed.
NASA Astrophysics Data System (ADS)
Barlier, Vincent; Bounor-Legaré, Véronique; Boiteux, Gisèle; Davenas, Joël; Léonard, Didier
2008-06-01
An original approach based on X-ray photoelectron spectroscopy (XPS) is proposed to study the influence of the surrounding humidity on the hydrolysis-condensation reactions of five titanium alkoxides in thin films. More precisely, the influence of the nature of the ligands (propoxide, butoxide, isopropoxide, phenoxide, and 9H-carbazole-9-yl-ethyl-oxy) on the reaction rate was evidenced. The reaction advancement was evaluated by comparing XPS chemical compositions to theoretical compositions calculated for all the possible rates. XPS chemical environment information allowed validating the reliability of this approach through the evaluation of the condensation state. In both approaches, the influence of the steric hindrance on the reactivity of titanium alkoxides was highlighted to be similar to what has been previously observed in solution. Theses results corroborate the validity of our XPS approach to determine titanium alkoxide hydrolysis-condensation reactions in the specific application of thin films.
Characterization of Titanium films for low temperature detectors
NASA Astrophysics Data System (ADS)
Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G.
2002-02-01
In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .
2013-07-01
31st ICPIG, July 14-19, 2013, Granada , Spain Investigation of Influence of Gas Ratio on the Electron Temperature in TiN Magnetron Sputtering...ICPIG) Held in Granada , Spain on 14-19 July 2013 14. ABSTRACT In this work, a nanolayer of titanium nitride which produced by the magnetron
Dispersion toughened silicon carbon ceramics
Wei, G.C.
1984-01-01
Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.
An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method
NASA Astrophysics Data System (ADS)
Amin, Nur Fahana Mohd; Ng, Sha Shiong
2017-12-01
In this research, the gallium nitride (GaN) thin films were deposited on aluminium nitride on sapphire (AlN/Al2O3) substrate by sol-gel spin coating method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. The structural and morphology properties of synthesized GaN thin films were characterized by using X-ray Diffraction, Field-Emission Scanning Electron Microscopy and Atomic Force Microscopy. While the elemental compositions and the lattice vibrational properties of the films were investigated by means of the Energy Dispersive X-ray spectroscopy and Raman spectroscopy. All the results revealed that the wurtzite structure GaN thin films with GaN(002) preferred orientation and smooth surface morphology were successfully grown on AlN/Al2O3 substrate by using inexpensive and simplified sol-gel spin coating technique. The sol-gel spin coated GaN thin film with lowest oxygen content was also achieved.FESEM images show that GaN thin films with uniform and packed grains were formed. Based on the obtained results, it can be concluded that wurtzite structure GaN thin films were successfully deposited on AlN/Al2O3 substrate.
2D nanostructures for water purification: graphene and beyond.
Dervin, Saoirse; Dionysiou, Dionysios D; Pillai, Suresh C
2016-08-18
Owing to their atomically thin structure, large surface area and mechanical strength, 2D nanoporous materials are considered to be suitable alternatives for existing desalination and water purification membrane materials. Recent progress in the development of nanoporous graphene based materials has generated enormous potential for water purification technologies. Progress in the development of nanoporous graphene and graphene oxide (GO) membranes, the mechanism of graphene molecular sieve action, structural design, hydrophilic nature, mechanical strength and antifouling properties and the principal challenges associated with nanopore generation are discussed in detail. Subsequently, the recent applications and performance of newly developed 2D materials such as 2D boron nitride (BN) nanosheets, graphyne, molybdenum disulfide (MoS2), tungsten chalcogenides (WS2) and titanium carbide (Ti3C2Tx) are highlighted. In addition, the challenges affecting 2D nanostructures for water purification are highlighted and their applications in the water purification industry are discussed. Though only a few 2D materials have been explored so far for water treatment applications, this emerging field of research is set to attract a great deal of attention in the near future.
NASA Astrophysics Data System (ADS)
Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.
2007-12-01
We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.
Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Simon, Daniel K., E-mail: daniel.simon@namlab.com; Schenk, Tony; Dirnstorfer, Ingo
2016-03-15
Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{supmore » −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.« less
High-energy electron beams for ceramic joining
NASA Astrophysics Data System (ADS)
Turman, Bob N.; Glass, S. J.; Halbleib, J. A.; Helmich, D. R.; Loehman, Ron E.; Clifford, Jerome R.
1995-03-01
Joining of structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for high temperature joining. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the ceramic. We have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 MPa have been measured. This strength is comparable to that reported in the literature for bonding silicon nitride (Si3N4) to molybdenum with copper-silver-titanium braze, but weaker than that reported for Si3N4 - Si3N4 with gold-nickel braze. The bonding mechanism appears to be formation of a thin silicide layer. Beam damage to the Si3N4 was also assessed.
Adhesion, friction, and deformation of ion-beam-deposited boron nitride films
NASA Technical Reports Server (NTRS)
Miyoshi, Kazuhisa; Buckley, Donald H.; Alterovitz, Samuel A.; Pouch, John J.; Liu, David C.
1987-01-01
The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.
Adhesion, friction and deformation of ion-beam-deposited boron nitride films
NASA Technical Reports Server (NTRS)
Miyoshi, K.; Buckley, D. H.; Alterovitz, S. A.; Pouch, J. J.; Liu, D. C.
1987-01-01
The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.
Adhesion and friction of transition metals in contact with nonmetallic hard materials
NASA Technical Reports Server (NTRS)
Miyoshi, K.; Buckley, D. H.
1981-01-01
Sliding friction experiments were conducted with the metals yttrium, titanium, tantalum, zirconium, vanadium, neodymium, iron, cobalt, nickel, tungsten, platinum, rhenium, ruthenium, and rhodium in sliding contact with single crystal diamond, silicon carbide, pyrolytic boron nitride, and ferrite. Auger electron spectroscopy analysis was conducted with the metals and nonmetals to determine the surface chemistry and the degree of surface cleanliness. The results of the investigation indicate the adhesion and friction of the transition metals in contact with diamond, silicon carbide, boron nitride, and ferrite are related to the relative chemical activity of the metals. The more chemically active the metal, the higher the coefficient of friction and the greater amount of transfer to the nonmetals.
NASA Astrophysics Data System (ADS)
Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao
2018-03-01
Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.
NASA Astrophysics Data System (ADS)
Khan, W. Q.; Wang, Qun; Jin, Xin; Yasin, G.
2017-11-01
Iron nitride thin films of different compositions and thicknesses were deposited on flexible polymer substrate in Ar/N2 atmosphere by reactive magnetron sputtering under varying nitrogen flow rates. The nano structured films were characterized by X-ray diffraction, UV-visible spectrophotometer, electrochemical impedance (EIS), atomic force (AFM) and transmission electron microscopies. The dependence of their functional properties on coating and growth conditions was studied in detail. It was found that the thin films show a uniform permeability in the frequency range of 200 MHz to 1 Ghz and can be used in this range without appreciable changes. Decrease of nitrogen flow rate resulted in the smoother surfaces which in turn increase transmittance quality and corrosion resistance. Functional properties are dependent of nature, relative concentration of the iron nitride phases and film thickness. Surface integrity is excellent for180 nm thick sample because the films appear to be very dense and free from open pores. By keeping sputtering power stable at 110 W, nitrogen flow rate of 10 sccm was ideal to develop the ferromagnetic γʹFe4N phase at room temperature.
Łapaj, Łukasz; Wendland, Justyna; Markuszewski, Jacek; Mróz, Adrian; Wiśniewski, Tomasz
2015-03-01
Data regarding in vivo performance of titanium nitride (TiN) coated prosthetic femoral heads is scarce, and available studies of older generations of implants demonstrated coating wear in vivo. That is why we conducted a retrieval analysis of 11 femoral heads (articulating in vivo for 1-56 months) with TiN film formed using physical vapor deposition (PVD), to verify if coating failure is a problem in contemporary implants. Retrieved implants were examined using scanning electron microscope, coating roughness was evaluated with a contact profilometer and adhesion was tested using a Rockwell HRC test according to VDI 3824 guideline. Although no gross failure of the TiN coating was observed in our retrievals, all implants had defects typical for PVD coatings, such as pinholes, small titanium droplets and blisters with delaminated coating. In some heads the coating was contaminated with small niobium (Nb) droplets uniformly scattered on the entire surface of the film. Presence of Nb contamination was associated with an increased number and area of other types of defects and poorer coating adhesion. In one component, subjected to multiple dislocations we found severe delamination and cracking of the coating, increased roughness and the presence of third bodies. Our results indicate, that although wear of the coating is lower than seen in older generations of implants, inconsistent quality of the TiN film among different implants indicates the need for strict monitoring of the manufacturing process. Copyright © 2015 Elsevier Ltd. All rights reserved.
Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films
NASA Astrophysics Data System (ADS)
Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang
2018-04-01
In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.
Thin sol-gel-derived silica coatings on dental pure titanium casting.
Yoshida, K; Kamada, K; Sato, K; Hatada, R; Baba, K; Atsuta, M
1999-01-01
The sol-gel dipping process, in which liquid silicon alkoxide is transformed into a solid silicon-oxygen network, can produce a thin film coating of silica (SiO(2)). The features of this method are high homogeneity and purity of the thin SiO(2) film and a low sinter temperature, which are important in the preparation of coating films that can protect metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface properties of dental pure titanium casting coated with a thin SiO(2) or SiO(2)/F-hybrid film by the sol-gel dipping process. The metal specimens were pretreated by dipping in isopropylalcohol solution containing 10 wt% 3-aminopropyl trimethoxysilane and treated by dipping in the silica precursor solution for 5 min, withdrawal at a speed of 2 mm/min, air-drying for 20 min at room temperature, heating at 120 degrees C for 20 min, and then storing at room temperature. Both SiO(2) and SiO(2)/F films bonded strongly (above 55 MPa) to pure titanium substrate by a tensile test. SiO(2(-)) and SiO(2)/F-coated specimens immersed in 1 wt% of lactic acid solution for two weeks showed significantly less release of titanium ions (30. 5 ppb/cm(2) and 9.5 ppb/cm(2), respectively) from the substrate than noncoated specimens (235.2 ppb/cm(2)). Hydrophobilization of SiO(2(-)) and SiO(2)/F-coated surfaces resulted in significant increases of contact angle of water (81.6 degrees and 105.7 degrees, respectively) compared with noncoated metal specimens (62.1 degrees ). The formation of both thin SiO(2) and SiO(2)/F-hybrid films by the sol-gel dipping process on the surface of dental pure titanium casting may be useful clinically in enhancing the bond strength of dental resin cements to titanium, preventing titanium ions release from the substrate, and reducing the accumulation of dental plaque attaching to intraoral dental restorations. Copyright 1999 John Wiley & Sons, Inc.
NASA Astrophysics Data System (ADS)
Herzog, T.; Walter, S.; Bartzsch, H.; Gittner, M.; Gloess, D.; Heuer, H.
2011-06-01
Many new materials and processes require non destructive evaluation in higher resolutions by phased array ultrasonic techniques in a frequency range up to 250 MHz. This paper presents aluminium nitride, a promising material for the use as a piezoelectric sensor material in the considered frequency range, which contains the potential for high frequency phased array application in the future. This work represents the fundamental development of piezoelectric aluminium nitride films with a thickness of up to 10 μm. We have investigated and optimized the deposition process of the aluminium nitride thin film layers regarding their piezoelectric behavior. Therefore a specific test setup and a measuring station were created to determine the piezoelectric charge constant (d33) and the electro acoustic behavior of the sensor. Single element transducers were deposited on silicon substrates with aluminium electrodes for top and bottom, using different parameters for the magnetron sputter process, like pressure and bias voltage. Afterwards acoustical measurements up to 500 MHz in pulse echo mode have been carried out and the electrical and electromechanical properties were qualified. In two different parameter sets for the sputtering process excellent piezoelectric charge constant of about 8.0 pC/N maximum were obtained.
Conductive layer for biaxially oriented semiconductor film growth
Findikoglu, Alp T.; Matias, Vladimir
2007-10-30
A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
Sol processing of conjugated carbon nitride powders for thin-film fabrication.
Zhang, Jinshui; Zhang, Mingwen; Lin, Lihua; Wang, Xinchen
2015-05-18
The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO3, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse-coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin-film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo-electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.
2018-03-01
Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.
Zorn, Gilad; Baio, Joe E.; Weidner, Tobias; Migonney, Veronique; Castner, David G.
2011-01-01
Biointegration of titanium implants in the body is controlled by their surface properties. Improving surface properties by coating with a bioactive polymer is a promising approach to improve the biological performance of titanium implants. To optimize the grafting processes, it is important to fully understand the composition and structure of the modified surfaces. The main focus of this study is to provide a detailed, multi-technique characterization of a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film grafted from titanium surfaces via a two-step procedure. Thin titanium films (~50 nm thick with an average surface roughness of 0.9±0.2nm) prepared by evaporation onto silicon wafers were used as smooth model substrates. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) showed that the titanium film was covered with a TiO2 layer that was at least 10nm thick and contained hydroxyl groups present at the outermost surface. These hydroxyl groups were first modified with a 3-methacryloxypropyltrimethoxysilane (MPS) cross linker. XPS and ToF-SIMS showed that a monolayer of the MPS molecules were successfully attached onto the titanium surfaces. The pNaSS film was grafted from the MPS modified titanium through atom transfer radical polymerization. Again, XPS and ToF-SIMS were used to verify that the pNaSS molecules were successfully grafted onto the modified surfaces. Atomic force microscopy analysis showed that the film was smooth and uniformly covered the surface. Fourier transform infrared spectroscopy indicated an ordered array of grafted NaSS molecules were present on the titanium surfaces. Sum frequency generation vibration spectroscopy and near edge X-ray absorption fine structure spectroscopy illustrated that the NaSS molecules were grafted onto the titanium surface with a substantial degree of orientational order in the styrene rings. PMID:21892821
Optical properties of spin-on deposited low temperature titanium oxide thin films
NASA Astrophysics Data System (ADS)
Rantala, J. T.; Kärkkäinen, A. H. O.
2003-06-01
This letter presents a method to fabricate high quality, high refractive index titanium oxide thin films by applying liquid phase spin-on deposition combined with low temperature annealing. The synthesis of the liquid form titanium oxide material is carried out using a sol-gel synthesis technique. The material can be annealed at low temperature (150 C°) to achieve relatively high refractive index of 1.94 at 632.8 nm wavelength, whereas annealing at 350 C° results in index of 2.03 at 632.8 nm. Film depositions are demonstrated on silicon substrates with 0.5% uniformity in thickness. Refractive indices and extinction coefficients are characterized over a broad wavelength range to demonstrate the optical performance of this novel aqueous phase spin-on deposited hybrid titanium oxide material.
Materials Analysis of Transient Plasma-Wall Interactions
2014-05-13
such as copper, aluminum, zirconium, titanium, and tungsten) and ceramics (beryllia, aluminum nitride, silicon carbide , etc.). These materials were...formation of silicon carbide . Therefore, a flat Macor disk was polished, and prepared for deuterium exposure by sonicating the sample in both methanol...of silicon constituents whereas the exposed sample clearly shows the addition of carbide and silicon segregation on the surface. 10 AFOSR
Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core-shell nanohelices.
Venkataramanababu, Sruthi; Nair, Greshma; Deshpande, Preeti; A, Jithin M; Mohan, Sangeneni; Ghosh, Ambarish
2018-06-22
Chiral metamaterials are obtained by assembling plasmonic elements in geometries with broken mirror symmetry, which can have promising applications pertaining to generation, manipulation and detection of optical polarisation. The materials used to fabricate this promising nanosystem, especially in the visible-NIR regime, are limited to noble metals such as Au and Ag. However, they are not stable at elevated temperatures and in addition, incompatible with CMOS technologies. We demonstrate that it is possible to develop a chiro-plasmonic system based on a refractory material such as titanium nitride (TiN) which does not have these disadvantages. The building block of our metamaterial is a novel core-shell helix, obtained by coating TiN over silica nanohelices. These were arranged in a regular two-dimensional array over cm-scale areas, made possible by the use of scalable fabrication techniques such as laser interference lithography, glancing angle deposition and DC magnetron sputtering. The measured chiro-optical response was extremely broadband (<500 nm to >1400 nm), and had contributions from individual, as well as collective plasmon modes of the interacting nanohelices, whose spectral characteristics could be easily controlled by varying the direction of the incident radiation.
Semiconducting cubic titanium nitride in the Th 3 P 4 structure
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bhadram, Venkata S.; Liu, Hanyu; Xu, Enshi
We report the discovery of a long-sought-after phase of titanium nitride with stoichiometry Ti 3 N 4 using diamond anvil cell experiments combined with in situ high-resolution x-ray diffraction and Raman spectroscopy techniques, supported by ab initio calculations. Ti 3 N 4 crystallizes in the cubic Th 3 P 4 structure [space group I ¯ 4 3 d (220)] from a mixture of TiN and N 2 above ≈ 75 GPa and ≈ 2400 K. The density ( ≈ 5.22 g/cc) and bulk modulus ( K 0 = 290 GPa) of cubic- Ti 3 N 4 ( c - Timore » 3 N 4 ) at 1 atm, estimated from the pressure-volume equation of state, are comparable to rocksalt TiN. Ab initio calculations based on the GW approximation and using hybrid functionals indicate that c - Ti 3 N 4 is a semiconductor with a direct band gap between 0.8 and 0.9 eV, which is larger than the previously predicted values. The c - Ti 3 N 4 phase is not recoverable to ambient pressure due to dynamic instabilities, but recovery of Ti 3 N 4 in the defect rocksalt (or related) structure may be feasible.« less
Low-loss and tunable near-zero-epsilon titanium nitride
NASA Astrophysics Data System (ADS)
Popović, M.; Novaković, M.; Schmidt, E.; Schöppe, P.; Bibić, N.; Ronning, C.; Rakočević, Z.
2017-10-01
Titanium nitride (TiN) has emerged as alternative plasmonic material in the visible and near-infrared spectral range due to its metallic properties. We studied the influence of silver ion implantation (fluence range from 0.5 × 1016-6 × 1016 ions/cm2) on the structural and optical properties of reactively sputtered 260 nm thick TiN films. The columnar structure was partially destroyed by the irradiation and up to 5 at.% of Ag was incorporated into the films within the projected ion range. The formation of cubic Ag nanoparticles with size of 1-2 nm was observed by high resolution transmission electron microscopy and subsequent fast Fourier transform analysis. This presence of Ag within the TiN matrix drastically changes both the real and imaginary component of the dielectric function and provides low optical losses. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the silver influence on the optical behavior of TiN. With increasing ion fluence, the unscreened plasma frequency decreased and broadening increased. The energy, strength and broadening of the interband transitions were studied with respect to the silver ion fluence and correlated with the microstructural changes induced in TiN films.
Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core–shell nanohelices
NASA Astrophysics Data System (ADS)
Venkataramanababu, Sruthi; Nair, Greshma; Deshpande, Preeti; A, Jithin M.; Mohan, Sangeneni; Ghosh, Ambarish
2018-06-01
Chiral metamaterials are obtained by assembling plasmonic elements in geometries with broken mirror symmetry, which can have promising applications pertaining to generation, manipulation and detection of optical polarisation. The materials used to fabricate this promising nanosystem, especially in the visible–NIR regime, are limited to noble metals such as Au and Ag. However, they are not stable at elevated temperatures and in addition, incompatible with CMOS technologies. We demonstrate that it is possible to develop a chiro-plasmonic system based on a refractory material such as titanium nitride (TiN) which does not have these disadvantages. The building block of our metamaterial is a novel core–shell helix, obtained by coating TiN over silica nanohelices. These were arranged in a regular two-dimensional array over cm-scale areas, made possible by the use of scalable fabrication techniques such as laser interference lithography, glancing angle deposition and DC magnetron sputtering. The measured chiro-optical response was extremely broadband (<500 nm to >1400 nm), and had contributions from individual, as well as collective plasmon modes of the interacting nanohelices, whose spectral characteristics could be easily controlled by varying the direction of the incident radiation.
Xenon migration behaviour in titanium nitride
NASA Astrophysics Data System (ADS)
Gavarini, S.; Toulhoat, N.; Peaucelle, C.; Martin, P.; Mende, J.; Pipon, Y.; Jaffrezic, H.
2007-05-01
Titanium nitride is one of the inert matrixes proposed to surround the fuel in gas cooled fast reactor (GFR) systems. These reactors operate at high temperature and necessitate refractory materials presenting a high chemical stability and good mechanical properties. A total retention of the most volatile fission products, such as Xe, I or Cs, by the inert matrix is needed during the in pile process. The thermal migration of xenon in TiN was studied by implanting 800 keV Xe++ ions in sintered samples at an ion fluence of 5 × 1015 cm-2. Annealing was performed at temperatures ranging from 1673 to 1923 K for 1 and 3 h. Xenon concentration profiles were studied by Rutherford backscattering spectrometry (RBS) using 2.5 MeV α-particles. The migration behaviour of xenon corresponds to a gas migration model. It is dominated by a surface directed transport with a slight diffusion component. The mean activation energy corresponding to the diffusion component was found to be 2.2 ± 0.3 eV and corresponds to the Brownian motion of xenon bubbles. The directed Xe migration can be interpreted in term of bubble transport using Evans model. This last process is mostly responsible for xenon release from TiN.
SURFACE HARDENING OF TITANIUM BY TREATMENT IN MOLTEN BORAX
DOE Office of Scientific and Technical Information (OSTI.GOV)
Minkevich, A.N.; Shul'ga, Yu.N.
1957-01-01
The surface hardening of titanium and titanium alloys by treatment in molten borax was investigated. Commercial titanium, a titanium-tungsten alloy, and an aluminum-chromium-titanium alloy were used for the experiments. To prevent oxidation of the titanium and to protect the surface, electro-chemical protection was applied, the current density being 0.1 amp/cm/sup 2/ and the the specimens were coated with a thin layer of borax. The results showed that treatment in molten borax is an effective method of increasing surface hardness. However, the strength, mmalleabiltiy, and toughness of the hardness increase is discussed. (J.S.R.)
The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces
NASA Technical Reports Server (NTRS)
Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas
2011-01-01
Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.
The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces
NASA Technical Reports Server (NTRS)
Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas
2016-01-01
Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.
Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method
NASA Astrophysics Data System (ADS)
Amin, N. Mohd; Ng, S. S.
2018-01-01
Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gillinger, M.; Schneider, M.; Bittner, A.
2015-02-14
Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 hmore » in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.« less
Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering
NASA Astrophysics Data System (ADS)
Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.
2017-03-01
Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.
NASA Astrophysics Data System (ADS)
Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi
2018-01-01
The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.
Peitsch, T; Klocke, A; Kahl-Nieke, B; Prymak, O; Epple, M
2007-09-01
The influence of dynamic mechanical loading and of surface nitridation on the nickel release from superelastic nickel-titanium orthodontic wires was investigated under ultrapure conditions. Commercially available superelastic NiTi arch wires (size 0.018 x 0.025'') without surface modification (Neo Sentalloy) and with nitrogen ion implantation surface treatment (Neo Sentalloy Ionguard) were analyzed. Mechanical loading of wire segments with a force similar to the physiological situation was performed with a frequency of 5 Hz in ultrapure water and saline solution, respectively. The release of nickel was monitored by atomic absorption spectroscopy for up to 36 days. The mechanically loaded wires released significantly more nickel ( approximately 45 ng cm(-2) d(-1)) than did nonloaded wires (<1 ng cm(-2) d(-1)). There was no statistically significant effect of the testing solution (water or NaCl) or of the surface nitridation. The total amount of released nickel was small in all cases, but may nevertheless account for the occasional clinical observations of adverse reactions during application of NiTi-based orthodontic appliances. The surface nitridation did not constrain the release of nickel from NiTi under continuous mechanical stress.
Two-Dimensional Titanium Carbide (MXene) as Surface-Enhanced Raman Scattering Substrate
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sarycheva, Asia; Makaryan, Taron; Maleski, Kathleen
Here, noble metal (gold or silver) nanoparticles or patterned films are typically used as substrates for surface-enhanced Raman spectroscopy (SERS). Two-dimensional (2D) carbides and nitrides (MXenes) exhibit unique electronic and optical properties, including metallic conductivity and plasmon resonance in the visible or near-infrared range, making them promising candidates for a wide variety of applications. Herein, we show that 2D titanium carbide, Ti 3C 2T x, enhances Raman signal from organic dyes on a substrate and in solution. As a proof of concept, MXene SERS substrates were manufactured by spray-coating and used to detect several common dyes, with calculated enhancement factorsmore » reaching ~10 6. Titanium carbide MXene demonstrates SERS effect in aqueous colloidal solutions, suggesting the potential for biomedical or environmental applications, where MXene can selectively enhance positively charged molecules.« less
NASA Technical Reports Server (NTRS)
Bill, R. C.
1976-01-01
A titanium - 6-percent-aluminum - 4-percent-vanadium alloy (Ti-6Al-4V) was subjected to fretting-wear exposures against uncoated Ti-6Al-4V as a baseline and against various coatings and surface treatments applied to Ti-6Al-4V. The coatings evaluated included plasma-sprayed tungsten carbide with 12 percent cobalt, aluminum oxide with 13 percent titanium oxide, chromium oxide, and aluminum bronze with 10 percent aromatic polyester; polymer-bonded polyimide, polyimide with graphite fluoride, polyimide with molybdenum disulfide (MoS2), and methyl phenyl silicone bonded MoS2, preoxidation surface treatment, a nitride surface treatment, and a sputtered MoS2 coating. Results of wear measurements on both the coated and uncoated surfaces after 300,000 fretting cycles indicated that the polyimide coating was the most wear resistant and caused the least wear to the uncoated mating surface.
Extending the 3ω method: thermal conductivity characterization of thin films.
Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul
2013-08-01
A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.
Han, Lin; Zhou, Jing; Sun, Yubing; Zhang, Yu; Han, Jung; Fu, Jianping; Fan, Rong
2014-11-01
Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20-100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferentially on the films with 30 nm sized nanopores, which is correlated with the optimum condition for cell spreading, which suggests that adhesion, spreading, and stem cell differentiation are interlinked and might be coregulated by nanotopography.
Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.
We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.
Diamond Composite Films for Protective Coatings on Metals and Method of Formation
NASA Technical Reports Server (NTRS)
Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)
1997-01-01
Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.
NASA Astrophysics Data System (ADS)
Oshikane, Yasushi
2017-08-01
A novel nanostructured end cap for a truncated conical apex of optical fiber has been studied experimental and numerically. The peculiar cap is composed of asymmetric metal-insulator-metal (MIM) structure coupled with subwavelength holes. The MIM structure may act as reflective band cut filter or generator of surface plasmon polariton (SPP). And nano holes in the thicker metal layer could extract the SPP from the MIM structure and lead it to outer surface of the metal layer. For the purpose, the author has started to create the asymmetric MIM structure with TiN and AlN by pulsed laser deposition (PLD). The resultant structure was diagnosed by spectroscopic analyses.
NASA Astrophysics Data System (ADS)
Sanginés, R.; Abundiz-Cisneros, N.; Hernández Utrera, O.; Diliegros-Godines, C.; Machorro-Mejía, R.
2018-03-01
In this work, we present a thorough study on the relation between the plasma emission and the change of the silicon nitride thin films refractive index. Thin films were grown by reactive magnetron direct current sputtering technique and deposited onto silicon wafers at different fluxes of Ar and N2 and at different working pressures. This procedure, at certain deposition parameters, produced poor quality films, i.e. films with refractive index other than pure Si3N4 films. The emission of the plasma was interrogated in real time by means of optical emission spectroscopy (OES) observing at the vicinity of the trget location. In addition, optical properties of the films were measured by in situ ellipsometric-spectroscopy and then correlated with OES observations. Changes in the film refractive index could be deduced from changes in plasma emission applying a principal component analysis.
Tian, Xinlong; Adzic, Radoslav R.; Luo, Junming; ...
2016-02-10
Here, the main challenges to the commercial viability of polymer electrolyte membrane fuel cells are (i) the high cost associated with using large amounts of Pt in fuel cell cathodes to compensate for the sluggish kinetics of the oxygen reduction reaction, (ii) catalyst degradation, and (iii) carbon-support corrosion. To address these obstacles, our group has focused on robust, carbon-free transition metal nitride materials with low Pt content that exhibit tunable physical and catalytic properties. Here, we report on the high performance of a novel catalyst with low Pt content, prepared by placing several layers of Pt atoms on nanoparticles ofmore » titanium nickel binary nitride. For the ORR, the catalyst exhibited a more than 400% and 200% increase in mass activity and specific activity, respectively, compared with the commercial Pt/C catalyst. It also showed excellent stability/durability, experiencing only a slight performance loss after 10,000 potential cycles, while TEM results showed its structure had remained intact. The catalyst’s outstanding performance may have resulted from the ultrahigh dispersion of Pt (several atomic layers coated on the nitride nanoparticles), and the excellent stability/durability may have been due to the good stability of nitride and synergetic effects between ultrathin Pt layer and the robust TiNiN support.« less
NASA Astrophysics Data System (ADS)
El-Eskandarany, M. Sherif
2017-05-01
The room-temperature reactive ball milling (RBM) approach was employed to synthesize nanostructured fcc-titanium nitride (TiN) powders, starting from milling hcp-titanium (Ti) powders under 10 bar of a nitrogen gas atmosphere, using a roller mill. During the first and intermediate stage of milling, the agglomerated Ti powders were continuously disintegrated into smaller particles with fresh surfaces. Increasing the RBM time led to an increase in the active-fresh surfaces of Ti, resulting increasing of the mole fraction of TiN against unreacted hcp-Ti. Toward the end of the RBM time (20 h), ultrafine spherical powder (with particles 0.5 μm in diameter) of the fcc-TiN phase was obtained, composed of nanocrystalline grains with an average diameter of 8 nm. The samples obtained after different stages of RBM time were consolidated under vacuum at 1600 °C into cylindrical bulk compacts of 20 mm diameter, using spark plasma sintering technique. These compacts that maintained their nanocrystalline characteristics with an average grain size of 56 nm in diameter, possessed high relative density (above 99% of the theoretical density). The Vickers hardness of the as-consolidated TiN was measured and found to be 22.9 GPa. The modulus of elasticity and shear modulus of bulk TiN were measured by a nondestructive test and found to be 384 and 189 GPa, respectively. In addition, the coefficient of friction of the end-product TiN bulk sample was measured and found to be 0.35.
Khan, Majharul Haque; Jamali, Sina S; Lyalin, Andrey; Molino, Paul J; Jiang, Lei; Liu, Hua Kun; Taketsugu, Tetsuya; Huang, Zhenguo
2017-01-01
Outstanding protection of Cu by high-quality boron nitride nanofilm (BNNF) 1-2 atomic layers thick in salt water is observed, while defective BNNF accelerates the reaction of Cu toward water. The chemical stability, insulating nature, and impermeability of ions through the BN hexagons render BNNF a great choice for atomic-scale protection. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2016-01-05
regularly used the Raman imaging system to characterize the doping chemistry of colloidal indium nitride nanoparticles . This material shows an interesting...regularly used the Raman imaging system to characterize the doping chemistry of colloidal indium nitride nanoparticles . This material shows an...analysis of thin film coatings, bulk materials, powders and nanoparticles . The instrument is extensively used to characterize advanced electrochemical and
Method for forming monolayer graphene-boron nitride heterostructures
Sutter, Peter Werner; Sutter, Eli Anguelova
2016-08-09
A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
NASA Astrophysics Data System (ADS)
Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.
2018-02-01
Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S
2018-02-06
Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
NASA Astrophysics Data System (ADS)
Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.
2017-10-01
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.
NASA Astrophysics Data System (ADS)
Suarez Anzorena, Manuel; Bertolo, Alma A.; Gagetti, Leonardo; Gaviola, Pedro A.; del Grosso, Mariela F.; Kreiner, Andrés J.
2018-06-01
Titanium deuteride thin films have been manufactured under different conditions specified by deuterium gas pressure, substrate temperature and time. The films were characterized by different techniques to evaluate the deuterium content and the homogeneity of such films. Samples with different concentrations of deuterium, including non deuterated samples, were irradiated with a 150 keV proton beam. Both deposits, pristine and irradiated, were characterized by optical profilometry and scanning electron microscopy.
NASA Astrophysics Data System (ADS)
Wang, Yige; Wang, Li; Li, Huanrong; Liu, Peng; Qin, Dashan; Liu, Binyuan; Zhang, Wenjun; Deng, Ruiping; Zhang, Hongjie
2008-03-01
Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film. TEM image shows that the in-situ formed lanthanide complexes were homogeneously distributed throughout the whole thin film. The quantum yield and the number of water coordinated to lanthanide metal center have been theoretically determined based on the luminescence data.
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films
NASA Astrophysics Data System (ADS)
Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.
2014-01-01
Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.
NASA Technical Reports Server (NTRS)
Choi, Doo Jin; Scott, William D.
1987-01-01
The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.
Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Misiano, Carlo; Zanoni, Robertino; Politi, Laura; Mazzola, Luca; Iosi, Francesca; Mura, Francesco; Scandurra, Roberto
2016-01-01
Recently, we introduced a new deposition method, based on Ion Plating Plasma Assisted technology, to coat titanium implants with a thin but hard nanostructured layer composed of titanium carbide and titanium oxides, clustered around graphitic carbon. The nanostructured layer has a double effect: protects the bulk titanium against the harsh conditions of biological tissues and in the same time has a stimulating action on osteoblasts. The aim of this work is to describe the biological effects of this layer on osteoblasts cultured in vitro. We demonstrate that the nanostructured layer causes an overexpression of many early genes correlated to proteins involved in bone turnover and an increase in the number of surface receptors for α3β1 integrin, talin, paxillin. Analyses at single-cell level, by scanning electron microscopy, atomic force microscopy, and single cell force spectroscopy, show how the proliferation, adhesion and spreading of cells cultured on coated titanium samples are higher than on uncoated titanium ones. Finally, the chemistry of the layer induces a better formation of blood clots and a higher number of adhered platelets, compared to the uncoated cases, and these are useful features to improve the speed of implant osseointegration. In summary, the nanostructured TiC film, due to its physical and chemical properties, can be used to protect the implants and to improve their acceptance by the bone.
Sensors for ceramic components in advanced propulsion systems
NASA Technical Reports Server (NTRS)
Koller, A. C.; Bennethum, W. H.; Burkholder, S. D.; Brackett, R. R.; Harris, J. P.
1995-01-01
This report includes: (1) a survey of the current methods for the measurement of surface temperature of ceramic materials suitable for use as hot section flowpath components in aircraft gas turbine engines; (2) analysis and selection of three sensing techniques with potential to extend surface temperature measurement capability beyond current limits; and (3) design, manufacture, and evaluation of the three selected techniques which include the following: platinum rhodium thin film thermocouple on alumina and mullite substrates; doped silicon carbide thin film thermocouple on silicon carbide, silicon nitride, and aluminum nitride substrates; and long and short wavelength radiation pyrometry on the substrates listed above plus yttria stabilized zirconia. Measurement of surface emittance of these materials at elevated temperature was included as part of this effort.
NASA Astrophysics Data System (ADS)
Bolbasov, E. N.; Antonova, L. V.; Stankevich, K. S.; Ashrafov, A.; Matveeva, V. G.; Velikanova, E. A.; Khodyrevskaya, Yu. I.; Kudryavtseva, Yu. A.; Anissimov, Y. G.; Tverdokhlebov, S. I.; Barbarash, L. S.
2017-03-01
The deposition of thin titanium coatings using magnetron spattering on the surface of bioresorbable fibrous scaffolds produced by electrospinning was investigated. Parameters that allow the surface modification without damaging the "macro" structure of scaffolds were determined. Physicochemical properties of the modified scaffolds were described using SEM, EDS, DSC, optical goniometry, and mechanical testing. It was shown that plasma treatment has a significant influence on the scaffolds' fiber surface relief. The modification process leads to a slight decrease of the scaffold mechanical performance mainly caused by polymer crystallization. Increasing the deposition time increases the amount of titanium on the surface. The biocompatibility of the modified scaffolds was studied using hybridoma of the endothelial cells of human umbilical vein and human lung carcinoma (EA.hy 926 cell line). Cell adhesion, viability, and secretion of interleukin-6 (IL6), interleukin-8 (IL8), and vascular endothelial growth factor (VEGF) were investigated. It was demonstrated that the deposition of thin titanium coatings on the fibrous scaffolds' surface enhances cell adhesion. Additionally, it was determined that modified scaffolds have proangiogenic activity.
Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
NASA Astrophysics Data System (ADS)
Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani
2018-05-01
The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.
Chemistry of Non-Equilibrium Film Deposition.
1985-12-01
titanium isopropoxide mixed with water solutions of lanthanum and lead nitrate. The gels were dehydrated, then fired to 600C to remove all organics...OW- ’so IRO $Va. ame Thin films; titanium dioxide; -PuZT,- ion beam deposition; annealing,’ trnmiso electron microscopy. 4 - . - S \\AISST 0A ZT *Can...Deposition....... . ... *.... .. ... .. ..... .. . .... 2 C. Nonequilibrium Physical Deposition.................... 3 1. Titanium Oxide Films
Shimizu, Wataru; Nakamura, Satoshi; Sato, Takaaki; Murakami, Yasushi
2012-08-21
Amorphous titanium dioxide (TiO(2)) thin films exhibiting high refractive indices (n ≈ 2.1) and high transparency were fabricated by spin-coating titanium oxide liquid precursors having a weakly branched polymeric structure. The precursor solution was prepared from titanium tetra-n-butoxide (TTBO) via the catalytic sol-gel process with hydrazine monohydrochloride used as a salt catalyst, which serves as a conjugate acid-base pair catalyst. Our unique catalytic sol-gel technique accelerated the overall polycondensation reaction of partially hydrolyzed alkoxides, which facilitated the formation of liner polymer-like titanium oxide aggregates having a low fractal dimension of ca. (5)/(3), known as a characteristic of the so-called "expanded polymer chain". Such linear polymeric features are essential to the production of highly dense amorphous TiO(2) thin films; mutual interpenetration of the linear polymeric aggregates avoided the creation of void space that is often generated by the densification of high-fractal-dimension (particle-like) aggregates produced in a conventional sol-gel process. The mesh size of the titanium oxide polymers can be tuned either by water concentration or the reaction time, and the smaller mesh size in the liquid precursor led to a higher n value of the solid thin film, thanks to its higher local electron density. The reaction that required no addition of organic ligand to stabilize titanium alkoxides was advantageous to overcoming issues from organic residues such as coloration. The dense amorphous film structure suppressed light scattering loss owing to its extremely smooth surface and the absence of inhomogeneous grains or particles. Furthermore, the fabrication can be accomplished at a low heating temperature of <80 °C. Indeed, we successfully obtained a transparent film with a high refractive index of n = 2.064 (at λ = 633 nm) on a low-heat-resistance plastic, poly(methyl methacrylate), at 60 °C. The result offers an efficient route to high-refractive-index amorphous TiO(2) films as well as base materials for a wider range of applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chang, C. L.; Carlstrom, J. E.; Datesman, A.
2008-04-01
The implementation of TES based microbolometer arrays will achieve unprecedented sensitivities for mm and sub-mm astronomy through fabrication of large format arrays and improved linearity and stability arising from strong electro-thermal feedback. We report on progress in developing TES microbolometers using Mo/Au thin films and Au absorbing structures. We present measurements of suppressing the thermal conductance through the etching of features on a continuous Silicon-Nitride window.
Veronesi, Francesca; Giavaresi, Gianluca; Fini, Milena; Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Panzini, Gianluca; Misiano, Carlo; Palattella, Alberto; Selleri, Paolo; Di Girolamo, Nicola; Garbarino, Viola; Politi, Laura; Scandurra, Roberto
2017-01-01
Titanium implants coated with a 500nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p<0.005) and Bone Formation Rate (BFR, μm 2 /μm/day) (p<0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p<0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. Copyright © 2016. Published by Elsevier B.V.
Multifunctional Ceramic Nanostructured Coatings
2010-12-01
silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on
Göncü, Yapıncak; Geçgin, Merve; Bakan, Feray; Ay, Nuran
2017-10-01
In this study, commercial pure titanium samples were coated with nano hydroxyapatite-nano hexagonal boron nitride (nano HA-nano hBN) composite by electrophoretic deposition (EPD). The effect of process parameters (applied voltage, deposition time and solid concentration) on the coating morphology, thickness and the adhesion behavior were studied systematically and crack free nano hBN-nano HA composite coating production was achieved for developing bioactive coatings on titanium substrates for orthopedic applications. For the examination of structural and morphological characteristics of the coating surfaces, various complementary analysis methods were performed. For the structural characterization, XRD and Raman Spectroscopy were used while, Scanning Electron Microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Transmission Electron Microscopy (TEM) techniques were carried out for revealing the morphological characterization. The results showed that nano HA-nano hBN were successfully deposited on Ti surface with uniform, crack-free coating by EPD. The amounts of hBN in suspension are considered to have no effect on coating thickness. By adding hBN into HA, the morphology of HA did not change and hBN has no significant effect on porous structure. These nanostructured surfaces are expected to be suitable for proliferation of cells and have high potential for bioactive materials. Copyright © 2017 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Gavarini, S.; Bès, R.; Peaucelle, C.; Martin, P.; Esnouf, C.; Toulhoat, N.; Cardinal, S.; Moncoffre, N.; Malchère, A.; Garnier, V.; Millard-Pinard, N.; Guipponi, C.
2009-06-01
Titanium nitride has been proposed as a fission product barrier in fuel structures for gas cooled fast reactor (GFR) systems. The thermal migration of Cs was studied by implanting 800 keV 133Cs ++ ions into sintered samples of TiN at an ion fluence of 5 × 10 15 cm -2. Thermal treatments at temperatures ranging from 1500 to 1650 °C were performed under a secondary vacuum. Concentration profiles were determined by 2.5 MeV 4He + elastic backscattering. The results reveal that the global mobility of caesium in the host matrix is low compared to xenon and iodine implanted in the same conditions. Nevertheless, the evolution of caesium depth profile during thermal treatment presents similarities with that of xenon. Both species are homogeneously transported towards the surface and the transport rate increases with the temperature. In comparison, iodine exhibits singular migration behaviour. Several assumptions are proposed to explain the better retention of caesium in comparison with both other species. The potential role played by the oxidation is underlined since even a slight modification of the surface stoichiometry may modify species mobility. More generally, the apparition of square-like shapes on the surface of the samples after implantations and thermal treatments is discussed.
Procedure for Automated Eddy Current Crack Detection in Thin Titanium Plates
NASA Technical Reports Server (NTRS)
Wincheski, Russell A.
2012-01-01
This procedure provides the detailed instructions for conducting Eddy Current (EC) inspections of thin (5-30 mils) titanium membranes with thickness and material properties typical of the development of Ultra-Lightweight diaphragm Tanks Technology (ULTT). The inspection focuses on the detection of part-through, surface breaking fatigue cracks with depths between approximately 0.002" and 0.007" and aspect ratios (a/c) of 0.2-1.0 using an automated eddy current scanning and image processing technique.
Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave
NASA Astrophysics Data System (ADS)
Malkowski, Thomas F.; Pimputkar, Siddha; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji
2016-12-01
This paper discusses promising materials for use as internal, non-load bearing components as well as molybdenum-based alloys for autoclave structural components for an ammonothermal autoclave. An autoclave was constructed from the commercial titanium-zirconium-molybdenum (TZM) alloy and was found to be chemically inert and mechanically stable under acidic ammonothermal conditions. Preliminary seeded growth of GaN was demonstrated with negligible incorporation of transition metals (including molybdenum) into the grown material (<1017 cm-3). Molybdenum and TZM were exposed to a basic ammonothermal environment, leading to slight degradation through formation of molybdenum nitride powders on their surface at elevated temperatures (T>560 °C). The possibility of a 'universal', inexpensive, liner-free ammonothermal autoclave capable of exposure to basic and acidic chemistry is demonstrated.
Passivation coating for flexible substrate mirrors
Tracy, C. Edwin; Benson, David K.
1990-01-01
A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.
NASA Technical Reports Server (NTRS)
Keller, L. E.; Lauer, J. L.; Jones, W. R., Jr.
1982-01-01
Infrared emission spectra and related measurements were obtained from an operating ball/plate elastohydrodynamic (EHD) sliding contact under a variety of operating conditions. In order to be able to compare the effect of the ball surface, some of the balls were coated with a thin layer of titanium nitride (TiN) by vapor deposition. Polyphenyl ether (5P4E) was used as lubricant and 1 percent of 1,1,2-trichloroethane (TCE) as a surface-probing additive. TiN is chemically inert and its thermal conductivity is lower than that of steel. Therefore, the overall temperatures with TiN coated balls were higher. Nevertheless, no scuffing was observed with the coated balls under conditions giving rise to scuffing with the uncoated balls. Tractions were lower with the TiN coated balls and always when TCE was added to the 5P4E. These findings were found to be inversely related to the degree of polarization of the spectral emission bands. The intensity and the dichrosim of these bands were related to shear rates and inlet conditions of the EHD contact.
A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory
NASA Technical Reports Server (NTRS)
Kooi, J. W.; Kawamura, J.; Chen, J.; Chattopadhyay, G.; Pardo, J. R.; Zmuidzinas, J.; Phillips, T. G.; Bumble, B.; Stern, J.; LeDuc, H. G.
2000-01-01
We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.
Thermal characterization and analysis of phase change random access memory
NASA Astrophysics Data System (ADS)
Giraud, V.; Cluzel, J.; Sousa, V.; Jacquot, A.; Dauscher, A.; Lenoir, B.; Scherrer, H.; Romer, S.
2005-07-01
The cross-plane thermal conductivity of Ge2Sb2Te5, either in its amorphous state or fcc crystallized state, and titanium nitride (TiN) thin films has been measured at room temperature by the 3ω method. These materials are involved in the fabrication of phase change random access memory (PC-RAM), Ge2Sb2Te5 and TiN being the PC and pseudoelectrode materials, respectively. The thermal conductivity of insulating SiO2 and ZnS :SiO2 layers was determined too. Each thermal conductivity measurement was performed by the means of at least two strip widths in order to check both the measurement self-consistency and the measurement accuracy. The performance of PC-RAM cells, i.e., the time needed to reach the melting temperature of the PC material and the cooling speed, has been evaluated as a function of both the measured thermal conductivity of the PC material and the reset current intensity independently of the thermal properties of the pseudoelectrodes by the way of analytical formula. The influence of the thickness and the thermal properties of the pseudoelectrodes on the performances have been determined by numerical simulations.
Passivation of uranium towards air corrosion by N 2+ and C + ion implantation
NASA Astrophysics Data System (ADS)
Arkush, R.; Mintz, M. H.; Shamir, N.
2000-10-01
The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N +2 and C + ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides.
Group III-nitride thin films grown using MBE and bismuth
Kisielowski, Christian K.; Rubin, Michael
2002-01-01
The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.
Group III-nitride thin films grown using MBE and bismuth
Kisielowski, Christian K.; Rubin, Michael
2000-01-01
The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.
Biofunctionalization of a “Clickable” Organic Layer Photochemically Grafted on Titanium Substrates
Li, Yan; Zhao, Meirong; Wang, Jun; Liu, Kai; Cai, Chengzhi
2011-01-01
We have developed a general method combining photochemical grafting and copper-catalyzed click chemistry for biofunctionalization of titanium substrates. The UV-activated grafting of an α,ω-alkenyne onto TiO2/Ti substrates provided a “clickable” thin film platform. The selective attachment of the vinyl end of the molecule to the surface was achieved by masking the alkynyl end with a trimethylgermanyl (TMG) protecting group. Subsequently, various oligo(ethylene glycol) (OEG) derivatives terminated with an azido group were attached to the TMG-alkynyl modified titanium surface via a one-pot deprotection/click reaction. The films were characterized by X-ray photoelectron spectroscopy (XPS), contact angle goniometry, ellipsometry, and atomic force microscopy (AFM). We showed that the titanium surface presenting click-immobilized OEG substantially suppressed the nonspecific attachment of protein and cells as compared to the unmodified titanium substrate. Furthermore, glycine-arginine-glycine-aspartate (GRGD), a cell adhesion peptide, was coimmobilized with OEG on the platform. We demonstrated that the resultant GRGD-presenting thin film on Ti substrates can promote the specific adhesion and spreading of AsPC-1 cells. PMID:21417429
In situ hydride formation in titanium during focused ion milling.
Ding, Rengen; Jones, Ian P
2011-01-01
It is well known that titanium and its alloys are sensitive to electrolytes and thus hydrides are commonly observed in electropolished foils. In this study, focused ion beam (FIB) milling was used to prepare thin foils of titanium and its alloys for transmission electron microscopy. The results show the following: (i) titanium hydrides were observed in pure titanium, (ii) the preparation of a bulk sample in water or acid solution resulted in the formation of more hydrides and (iii) FIB milling aids the precipitation of hydrides, but there were never any hydrides in Ti64 and Ti5553.
Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators
NASA Astrophysics Data System (ADS)
Li, Min
High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a negative flat band voltage shift and larger hysteresis relative to the HF-dipped samples. The IL EOT reduction by mtridation increases with increasing HE Surface nitridation also induces extra charge, more considerable at the Si/IL interface. The leakage current is reduced in the Hf-rich samples with a nitride layer. Electron mobility degradation by surface nitridation was also observed.
NASA Astrophysics Data System (ADS)
Orlianges, Jean-Christophe; Crunteanu, Aurelian; Pothier, Arnaud; Merle-Mejean, Therese; Blondy, Pierre; Champeaux, Corinne
2012-12-01
Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO2 allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.
Baskaran, Suresh; Graff, Gordon L.; Song, Lin
1998-01-01
The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.
NASA Astrophysics Data System (ADS)
Reyes, R.; Cremona, M.; Achete, C. A.
2011-01-01
Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.
Observation of phonon-polaritons in thin flakes of hexagonal boron nitride on gold
NASA Astrophysics Data System (ADS)
Ciano, C.; Giliberti, V.; Ortolani, M.; Baldassarre, L.
2018-04-01
Hexagonal Boron Nitride (hBN) is a layered van der Waals material able to sustain hyperbolic phonon-polaritons within its mid-infrared reststrahlen bands. We study the effect of a metallic substrate adjacent to hBN flakes on the polariton dispersion and on the standing wave patterns in nanostructures by means of mid-infrared nanospectroscopy and nanoimaging. We exploit the gold-coated tip apex for atomic force microscopy to launch polaritons in thin hBN flakes. The photo-thermal induced mechanical resonance is used to detect the amplitude profile of polariton standing waves with a lateral resolution of 30 nm. We observe the polariton excitation spectra on hBN flakes as thin as 4 nm, thanks to the infrared field enhancement in the nanogap between the gold-coated tip apex and an ultraflat gold substrate. The data indicate no major effect of remote screening of the free electrons in gold on the phonon-polariton excitation that appears robust also against geometrical imperfections.
Thin-walled boron nitride microtubes exhibiting intense band-edge UV emission at room temperature.
Huang, Yang; Bando, Yoshio; Tang, Chengchun; Zhi, Chunyi; Terao, Takeshi; Dierre, Benjamin; Sekiguchi, Takashi; Golberg, Dmitri
2009-02-25
Boron nitride (BN) microtubes were synthesized in a vertical induction furnace using Li(2)CO(3) and B reactants. Their structures and morphologies were investigated using x-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The microtubes have diameters of 1-3 microm, lengths of up to hundreds of micrometers, and well-structured ultrathin walls only approximately 50 nm thick. A mechanism combining the vapor-liquid-solid (VLS) and template self-sacrificing processes is proposed to explain the formation of these novel one-dimensional microstructures, in which the Li(2)O-B(2)O(3) eutectic reaction plays an important role. Cathodoluminescence studies show that even at room temperature the thin-walled BN microtubes can possess an intense band-edge emission at approximately 216.5 nm, which is distinct compared with other BN nanostructures. The study suggests that the thin-walled BN microtubes should be promising for constructing compact deep UV devices and find potential applications in microreactors and microfluidic and drug delivery systems.
NASA Astrophysics Data System (ADS)
Enriquez, Erik; Zhang, Yingying; Chen, Aiping; Bi, Zhenxing; Wang, Yongqiang; Fu, Engang; Harrell, Zachary; Lü, Xujie; Dowden, Paul; Wang, Haiyan; Chen, Chonglin; Jia, Quanxi
2016-08-01
Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1-1 mΩ.cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. The growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, W.L.; Zheng, F.; Fei, W.D.
2006-01-15
Fe-N thin films were fabricated using a direct current magnetron sputtering process assisted by a radio-frequency (rf) field. The effect of the rf field on the phase composition of the films was investigated. The results indicate that with the assistance of the rf field, various kinds of iron nitrides can be obtained in the films, including {alpha}{sup '}-Fe-N, {alpha}{sup ''}-Fe{sub 16}N{sub 2}, {xi}-Fe{sub 2}N, {epsilon}-Fe{sub 3}N, and {gamma}{sup ''}-FeN with ZnS structure. It was found that the rf field greatly benefits the formation of iron nitrides in the Fe-N films.
Pulsed TEA CO2 Laser Irradiation of Titanium in Nitrogen and Carbon Dioxide Gases
NASA Astrophysics Data System (ADS)
Ciganovic, J.; Matavulj, P.; Trtica, M.; Stasic, J.; Savovic, J.; Zivkovic, S.; Momcilovic, M.
2017-12-01
Surface changes created by interaction of transversely excited atmospheric carbon dioxide (TEA CO2) laser with titanium target/implant in nitrogen and carbon dioxide gas were studied. TEA CO2 laser operated at 10.6 μm, pulse length of 100 ns and fluence of ˜17 J/cm2 which was sufficient for inducing surface modifications. Induced changes depend on the gas used. In both gases the grain structure was produced (central irradiated zone) but its forms were diverse, (N2: irregular shape; CO2: hill-like forms). Hydrodynamic features at peripheral zone, like resolidified droplets, were recorded only in CO2 gas. Elemental analysis of the titanium target surface indicated that under a nitrogen atmosphere surface nitridation occurred. In addition, irradiation in both gases was followed by appearance of plasma in front of the target. The existence of plasma indicates relatively high temperatures created above the target surface offering a sterilizing effect.
Marangoni Convection during Free Electron Laser Nitriding of Titanium
NASA Astrophysics Data System (ADS)
Höche, Daniel; Müller, Sven; Rapin, Gerd; Shinn, Michelle; Remdt, Elvira; Gubisch, Maik; Schaaf, Peter
2009-08-01
Pure titanium was treated by free electron laser (FEL) radiation in a nitrogen atmosphere. As a result, nitrogen diffusion occurs and a TiN coating was synthesized. Local gradients of interfacial tension due to the local heating lead to a Marangoni convection, which determines the track properties. Because of the experimental inaccessibility of time-dependent occurrences, finite element calculations were performed, to determine the physical processes such as heat transfer, melt flow, and mass transport. In order to calculate the surface deformation of the gas-liquid interface, the level set approach was used. The equations were modified and coupled with heat-transfer and diffusion equations. The process was characterized by dimensionless numbers such as the Reynolds, Peclet, and capillary numbers, to obtain more information about the acting forces and the coating development. Moreover, the nitrogen distribution was calculated using the corresponding transport equation. The simulations were compared with cross-sectional micrographs of the treated titanium sheets and checked for their validity. Finally, the process presented is discussed and compared with similar laser treatments.
Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d’Abusco, Anna; Superti, Fabiana; Misiano, Carlo; Zanoni, Robertino; Politi, Laura; Mazzola, Luca; Iosi, Francesca; Mura, Francesco; Scandurra, Roberto
2016-01-01
Introduction Recently, we introduced a new deposition method, based on Ion Plating Plasma Assisted technology, to coat titanium implants with a thin but hard nanostructured layer composed of titanium carbide and titanium oxides, clustered around graphitic carbon. The nanostructured layer has a double effect: protects the bulk titanium against the harsh conditions of biological tissues and in the same time has a stimulating action on osteoblasts. Results The aim of this work is to describe the biological effects of this layer on osteoblasts cultured in vitro. We demonstrate that the nanostructured layer causes an overexpression of many early genes correlated to proteins involved in bone turnover and an increase in the number of surface receptors for α3β1 integrin, talin, paxillin. Analyses at single-cell level, by scanning electron microscopy, atomic force microscopy, and single cell force spectroscopy, show how the proliferation, adhesion and spreading of cells cultured on coated titanium samples are higher than on uncoated titanium ones. Finally, the chemistry of the layer induces a better formation of blood clots and a higher number of adhered platelets, compared to the uncoated cases, and these are useful features to improve the speed of implant osseointegration. Conclusion In summary, the nanostructured TiC film, due to its physical and chemical properties, can be used to protect the implants and to improve their acceptance by the bone. PMID:27031101
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hainsworth, S.V.; Page, T.F.; Sjoestroem, H.
1997-05-01
Carbon nitride (CN{sub x}) thin films (0.18 < x < 0.43), deposited by magnetron sputtering of C in a N{sub 2} discharge, have been observed to be extremely resistant to plastic deformation during surface contact (i.e., exhibit a purely elastic response over large strains). Elastic recoveries as high as 90% have been measured by nanoindentation. This paper addresses the problems of estimating Young`s modulus (E) and hardness (H) in such cases and shows how different strategies involving analysis of both loading and unloading curves and measuring the work of indentation each present their own problems. The results of some cyclicmore » contact experiments are also presented and possible deformation mechanisms in the fullerene-like CN{sub x} structures discussed.« less
Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus
NASA Astrophysics Data System (ADS)
Hussnain, A.; Rawat, R. S.; Ahmad, R.; Umar, Z. A.; Hussain, T.; Lee, P.; Chen, Z.
2015-07-01
Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3 kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN2 that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.
Zhang, Jing; Yang, Yingchao; Lou, Jun
2016-09-09
Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.
NASA Astrophysics Data System (ADS)
Xie, Fei; Zhang, Ge; Pan, Jianwei
2018-02-01
Thin cases and long treating time are shortcomings of conventional duplex treatment of aluminizing followed by nitriding (DTAN). Alternating current field (ACF) enhanced DTAN was carried out on AISI 1045 steel by applying an ACF to treated samples and treating agents with a pair of electrodes for overcoming those shortcomings. By investigating cases' structures, phases, composition and hardness distributions of differently treated samples, preliminary studies were made on characterizations of the ACF enhanced duplex treatment to AISI 1045 steel. The results show that, with the help of the ACF, the surface Al-rich phase Al5Fe2 formed in conventional pack aluminizing can be easily avoided and the aluminizing process is dramatically promoted. The aluminizing case can be nitrided either with conventional pack nitriding or ACF enhanced pack nitriding. By applying ACF to pack nitriding, the diffusion of nitrogen into the aluminizing case is promoted. AlN, Fe2∼3N and solid solution of N in iron are efficiently formed as a result of reactions of N with the aluminizing case. A duplex treated case with an effective thickness of more than 170 μm can be obtained by the alternating current field enhanced 4 h pack aluminizing plus 4 h pack nitriding.
Ultrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructures.
Yang, Peihua; Chao, Dongliang; Zhu, Changrong; Xia, Xinhui; Zhang, Yongqi; Wang, Xingli; Sun, Peng; Tay, Beng Kang; Shen, Ze Xiang; Mai, Wenjie; Fan, Hong Jin
2016-06-01
Ultrahigh rates realized by ALD-made TiN . The symmetric full-cell supercapacitors deliver a typical capacitance of 20.7 F cm -3 at a scan rate of 1 V s -1 , and retain 4.3 F cm -3 at high rate of 100 V s -1 . The devices can be charged and discharged for 20 000 cycles with negligible capacitance loss and with an ultralow self-discharge current (≈1 μA).
NASA Technical Reports Server (NTRS)
Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.
1990-01-01
Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.
Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films.
Kim, Euk Hyun; Lim, Min Hyuk; Lah, Myoung Soo; Koo, Sang Man
2018-02-13
Heteroleptic titanium alkoxides with three different ligands, i.e., [Ti(O i Pr)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO 2 thin films. Acetylacetone (acacH) or 2,2,6,6-tetramethyl-3,5-heptanedione (thdH) was employed as a bidentate ligand, while N-methyldiethanolamine (MDEA) was employed as a tridentate ligand. It was expected that the oxygen and moisture susceptibility of titanium alkoxides, as well as their tendency to form oligomers, would be greatly reduced by placing multidentate and bulky ligands around the center Ti atom. The synthesized heteroleptic titanium alkoxides were characterized both physicochemically and crystallographically, and their thermal behaviors were also investigated. [Ti(O i Pr)(MDEA)(thd)] was found to be monomeric and stable against moisture; it also showed good volatility in the temperature window between volatilization and decomposition. This material was used as a single-source precursor during MOCVD to generate TiO 2 thin films on silicon wafers. The high thermal stability of [Ti(O i Pr)(MDEA)(thd)] enabled the fabrication of TiO 2 films over a wide temperature range, with steady growth rates between 500 and 800 °C.
Single-Photon Emitters in Boron Nitride Nanococoons.
Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín
2018-04-11
Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.
Study of SiO{sub 2}/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chanthaphan, Atthawut, E-mail: chanthaphan@asf.mls.eng.osaka-u.ac.jp; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi
An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N{sub 2} ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO{sub 2}/SiC interfaces. Although N{sub 2}-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N{sub 2}-POA was achieved under certain conditions, i.e., thin SiO{sub 2} layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N{sub 2}-POA revealed the same evidence of slow trap passivation and fast trapmore » generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.« less
Optical properties of titanium di-oxide thin films prepared by dip coating method
NASA Astrophysics Data System (ADS)
Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar
2018-05-01
Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.
Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O
2013-01-18
Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.
Gas phase hydrogen permeation in alpha titanium and carbon steels
NASA Technical Reports Server (NTRS)
Johnson, D. L.; Shah, K. K.; Reeves, B. H.; Gadgeel, V. L.
1980-01-01
Commercially pure titanium and heats of Armco ingot iron and steels containing from 0.008-1.23 w/oC were annealed or normalized and machined into hollow cylinders. Coefficients of diffusion for alpha-Ti and alpha-Fe were determined by the lag-time technique. Steady state permeation experiments yield first power pressure dependence for alpha-Ti and Sievert's law square root dependence for Armco iron and carbon steels. As in the case of diffusion, permeation data confirm that alpha-titanium is subject to at least partial phase boundary reaction control while the steels are purely diffusion controlled. The permeation rate in steels also decreases as the carbon content increases. As a consequence of Sievert's law, the computed hydrogen solubility decreases as the carbon content increases. This decreases in explained in terms of hydrogen trapping at carbide interfaces. Oxidizing and nitriding the surfaces of alpha-titanium membranes result in a decrease in the permeation rate for such treatment on the gas inlet surfaces but resulted in a slight increase in the rate for such treatment on the gas outlet surfaces. This is explained in terms of a discontinuous TiH2 layer.
Sol-gel synthesis and optical properties of titanium dioxide thin film
NASA Astrophysics Data System (ADS)
Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali
2018-03-01
The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.
Wong, Dillon; Velasco, Jairo; Ju, Long; Lee, Juwon; Kahn, Salman; Tsai, Hsin-Zon; Germany, Chad; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F
2015-11-01
Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but such single-defect electronic characterization remains an elusive goal for intrinsic bulk insulators. Here, we show that individual native defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipulated using a scanning tunnelling microscope. This would typically be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomically thin nature of graphene to allow the visualization of defect phenomena in the underlying bulk boron nitride. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunnelling spectroscopy we obtain charge and energy-level information for these boron nitride defect structures. We also show that it is possible to manipulate the defects through voltage pulses applied to the scanning tunnelling microscope tip.
Atomic hydrogen and diatomic titanium-monoxide molecular spectroscopy in laser-induced plasma
NASA Astrophysics Data System (ADS)
Parigger, Christian G.; Woods, Alexander C.
2017-03-01
This article gives a brief review of experimental studies of hydrogen Balmer series emission spectra. Ongoing research aims to evaluate early plasma evolution following optical breakdown in laboratory air. Of interest is as well laser ablation of metallic titanium and characterization of plasma evolution. Emission of titanium monoxide is discussed together with modeling of diatomic spectra to infer temperature. The behavior of titanium particles in plasma draws research interests ranging from the modeling of stellar atmospheres to the enhancement of thin film production via pulsed laser deposition.
Precautions toward XTEM of Si3N4/SiO2
NASA Technical Reports Server (NTRS)
Ogbuji, Linus U. J. T.
1991-01-01
Severe difficulties are encountered in the preparation of oxidized Si3N4 specimens for XTEM transmission electromicroscopic inspection, in virtue of the extreme difference between Si3N4 and SiO2 mechanical properties. Attention is presently given to a preparation method in which an overlayer of the nitride is always occluded; this protects the oxide through most of the thinning that specimen preparation entails. An XTEM image of the oxide/nitride interface is presented.
Low temperature production of large-grain polycrystalline semiconductors
Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY
2007-04-10
An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.
Process for growing epitaxial gallium nitride and composite wafers
Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim
2003-05-13
A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.
Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic
2015-09-01
tile(s) Aluminum nitride (AlN) 163 a Polymer layers Polyurethane foam 18 b Backing metal Aluminum 6061-T6 (Al) 23 c Projectile Tungsten heavy alloy...larger (a factor of 3.8) than the most dense polyurethane foam of the available constitutive models. Default options for element failure were imposed in...AlN), a polycrystalline ceramic. The total thickness of the tile(s) is 38.1 mm in all cases. A thin polyurethane laminate separates neighboring tiles
Friction and wear behaviour of ion beam modified ceramics
NASA Technical Reports Server (NTRS)
Lankford, J.; Wei, W.; Kossowsky, R.
1987-01-01
In the present study, the sliding friction coefficients and wear rates of carbide, oxide, and nitride materials for potential use as sliding seals (ring/liner) were measured under temperature, environmental, velocity, and loading conditions representative of a diesel engine. In addition, silicon nitride and partially stabilized zirconia discs were modified by ion mixing with TiNi, nickel, cobalt and chromium, and subsequently run against carbide pins, with the objective of producing reduced friction via solid lubrication at elevated temperature. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above. However, the coefficient at 800 C in an oxidizing environment was reduced to below 0.1, for certain material combinations, by the ion implantation of TiNi or cobalt. This beneficial effect was found to derive from lubricious titanium, nickel, and cobalt oxides.
NASA Astrophysics Data System (ADS)
Eskin, Sergei
1998-12-01
Laser treatment of the 303 and 416 stainless steels with Ti precoating was studied. CW CO2 and UV ArF excimer lasers were used. The TiN films were formed at a treatment velocity of 0.5 to 3 - 5 cm/sec and a power density of CO2 laser at (3 - 5) 104 W/cm2. X-ray diffractometry, x-ray mapping and Auger electron spectroscopy techniques indicated a TiN phase on the surface with oxygen content 12 - 25 at%. The thickness of the TiN film was 0.3 - 0.4 micrometers after treatment of the 5 micrometers Ti coating and about 900 angstroms for the 0.3 micrometers coating. Some characteristics of TiN films were examined and features of the nitriding process are discussed.
Thin Film Technology of High-Critical-Temperature Superconducting Electronics.
1985-12-11
ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near
Promising Sparingly Alloyed Boron-Bearing Steels for the Production of High-Strength Fasteners
NASA Astrophysics Data System (ADS)
Bobylev, M. V.; Koroleva, E. G.; Shtannikov, P. A.
2005-05-01
The main advantages of boron-bearing steels used for production of rolled sections at cold upset shops of Russian automotive plants are considered. A thermodynamic model for the majority of boron-bearing steels for high-strength fasteners is used to plot nomograms characterizing the effect of titanium, aluminum, nitrogen, and boron on the amount of nitrides and oxides segregated in crystallization and on the content of effective boron. The effect of effective boron on the characteristics of hardenability is estimated. The studies conducted are used for determining the range of permissible contents of titanium and aluminum ensuring through hardenability of rolled bars from steels 12G1R, 20G2R, and 30G1R up to 25 mm in diameter.
Super-hard cubic BN layer formation by nitrogen ion implantation
NASA Astrophysics Data System (ADS)
Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.
1994-11-01
Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.
Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël
2012-09-28
To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.
Life Prediction of Fretting Fatigue with Advanced Surface Treatments (Preprint)
2006-05-01
surfaces and not the fretting pads. The chosen coatings included DLC, Ni-B, Molybdenum, and Nitride. These 4 coatings, their application to the titanium ...Article Preprint 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 4 . TITLE AND SUBTITLE LIFE PREDICTION OF FRETTING FATIGUE WITH ADVANCED SURFACE...TREATMENTS (PREPRINT) 5c. PROGRAM ELEMENT NUMBER N/A 5d. PROJECT NUMBER M02R 5e. TASK NUMBER 30 6 . AUTHOR(S) Patrick J. Golden and Michael
The Compressive Failure of Aluminum Nitride Considered as a Model Advanced Ceramic
2012-06-01
and fragmentation of hot-pressed silicon carbide under uniaxial compression. Acta Materialia 52 (2), 355–367. Xia, Q., Xia, H., Ruoff, A.L., 1993...Orphal et al., 1996) both as a standalone material and as part of ceramic composites (particularly with SiC ). Much of the literature on bulk...compression experiments. Tungsten carbide platens jacketed by the Ti-6Al-4V titanium alloy were used to protect the loading surfaces of the testing
2015-03-26
method has been successfully used with several materials such as silicon carbide fiber - silicon carbide matrix ( SiC / SiC ) CMCs with carbon and boron...elements [14]. These advanced ceramics include oxides, nitrides and carbides of silicon , aluminum, titanium, and zirconium [12]. One of the most...oxides over silicon carbide and other non-oxide materials. In fact, it is the inherent stability of oxides in oxidizing environments which originally
Meijs, Suzan; Fjorback, Morten; Jensen, Carina; Sørensen, Søren; Rechendorff, Kristian; Rijkhoff, Nico J. M.
2015-01-01
The in vivo electrochemical behavior of titanium nitride (TiN) nerve stimulation electrodes was compared to their in vitro behavior for a period of 90 days. Ten electrodes were implanted in two Göttingen minipigs. Four of these were used for electrical stimulation and electrochemical measurements. Five electrodes were kept in Ringer's solution at 37.5°C, of which four were used for electrical stimulation and electrochemical measurements. The voltage transients measured in vivo were 13 times greater than in vitro at implantation and they continued to increase with time. The electrochemical properties in vivo and the tissue resistance (Rtissue) followed a similar trend with time. There was no consistent significant difference between the electrochemical properties of the in vivo and in vitro electrodes after the implanted period. The differences between the in vivo and in vitro electrodes during the implanted period show that the evaluation of electrochemical performance of implantable stimulation electrodes cannot be substituted with in vitro measurements. After the implanted period, however, the performance of the in vivo and in vitro electrodes in saline was similar. In addition, the changes observed over time during the post-implantation period regarding the electrochemical properties of the in vivo electrodes and Rtissue were similar, which indicates that these changes are due to the foreign body response to implantation. PMID:26300717
NASA Astrophysics Data System (ADS)
Biswas, Sayari; Kar, Asit Kumar
2018-02-01
Titanium dioxide (TiO2) thin films were synthesized by hydrothermal assisted sol-gel dip coating method on quartz substrate. The sol was prepared by hydrothermal method at 90 °C. Dip coating method was used to deposit the thin films. Later films were annealed at four different temperatures -600 °C, 800 °C, 1000 °C and 1200 °C. XRD study showed samples annealed at 600 °C are almost amorphous. At 800 °C, film turns into anatase phase and with further increment of annealing temperature they turn into rutile phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60% was observed in the visible region for the sample annealed at the lowest temperature. Band gap of the prepared films varies from 2.9 eV to 3.5 eV.
NASA Technical Reports Server (NTRS)
Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.
1993-01-01
Outer layer of silver lubricates, while intermediate layer of titanium ensures adhesion. Lubricating outer films of silver deposited on thin intermediate films of titanium on alumina substrates found to reduce sliding friction and wear. Films provide effective lubrication for ceramic seals, bearings, and other hot sliding components in advanced high-temperature engines.
Consolidation and fabrication techniques for vanadium-20 w/o titanium /TV-20/
NASA Technical Reports Server (NTRS)
Burt, W. R.; Karasek, F. J.; Kramer, W. C.; Mayfield, R. M.; Mc Gowan, R. D.
1968-01-01
Tests of the mechanical properties, fuel compatibility, sodium corrosion and irradiation behavior were made for vanadium and vanadium alloy. Improved methods for consolidation and fabrication of bar, rod, sheet, and high-quality, small diameter, thin-wall tubing of vanadium-20 without titanium are reported.
Titanium dioxide thin films by atomic layer deposition: a review
NASA Astrophysics Data System (ADS)
Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit
2017-09-01
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.
Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.
Velten, D; Eisenbarth, E; Schanne, N; Breme, J
2004-04-01
Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.
Loger, K; Engel, A; Haupt, J; Lima de Miranda, R; Lutter, G; Quandt, E
2016-03-01
Heart valves are constantly exposed to high dynamic loading and are prone to degeneration. Therefore, it is a challenge to develop a durable heart valve substitute. A promising approach in heart valve engineering is the development of hybrid scaffolds which are composed of a mechanically strong inorganic mesh enclosed by valvular tissue. In order to engineer an efficient, durable and very thin heart valve for transcatheter implantations, we developed a fabrication process for microstructured heart valve leaflets made from a nickel-titanium (NiTi) thin film shape memory alloy. To examine the capability of microstructured NiTi thin film as a matrix scaffold for tissue engineered hybrid heart valves, leaflets were successfully seeded with smooth muscle cells (SMCs). In vitro pulsatile hydrodynamic testing of the NiTi thin film valve leaflets demonstrated that the SMC layer significantly improved the diastolic sufficiency of the microstructured leaflets, without affecting the systolic efficiency. Compared to an established porcine reference valve model, magnetron sputtered NiTi thin film material demonstrated its suitability for hybrid tissue engineered heart valves.
Anodic oxidation of commercially pure titanium for purification of polluted water
NASA Astrophysics Data System (ADS)
Benkafada, Faouzia; Kerdoud, Djahida; Bouchoucha, Ali
2018-05-01
Anodisation of pure titanium has been carried out in sulphuric acid solution at potentials ranging from 40 V to 5 days. We studied the parameters influencing the anodic deposition such as acid concentration and anodic periods. Anodic oxides thin films were characterized by X-ray diffraction, cyclic polarization and electrochemical impedance spectroscopy. The I-V curves and electrochemical impedance measurements were carried out in 0.1 N NaOH solution. The results indicated that although the thin films obtained by anodic oxidation are nonstoichiometric, they have an electric behaviour like n-type semiconducting material.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Enriquez, Erik M.; Zhang, Yingying; Chen, Aiping
2016-08-26
Epitaxial layered ternary metal-nitride FeMoN 2, (Fe 0.33 Mo 0.67)MoN 2, CoMoN 2, and FeWN 2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN 2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has beenmore » used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN 2 materials through A and B-site substitution.« less
Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung
2013-12-15
Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistancemore » states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.« less
Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.
2008-08-01
We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less
NASA Astrophysics Data System (ADS)
Munoz, Trinidad, Jr.
1998-12-01
Molecular sieves are one class of crystalline low density metal oxides which are made up of one-, two-, and three dimensional pores and/or cages. We have investigated the synthesis and characterization of metal substituted aluminophosphates and all silica molecular sieves for thin film applications. A new copper substituted aluminophosphate, CuAPO-5 has been synthesized and characterized using x-ray powder diffraction, FT-IR spectroscopy and scanning electron microscopy. Electron spin resonance and electron spin echo modulation provided supporting evidence of framework incorporation of Cu(II) ions. Thus, an exciting addition has been added to the family of metal substituted aluminophosphates where substitution of the metal has been demonstrated as framework species. Also presented here is the synthesis and characterization of an iron substituted aluminophosphate, FeAPO-5, and an all silica zeolite, UTD-1 for thin film applications. Pulsed laser ablation has been employed as the technique to generate thin films. Here an excimer laser (KrFsp*, 248 nm) was used to deposit the molecular sieves on a variety of substrates including polished silicon, titanium nitride, and porous stainless steel disks. The crystallinity of the deposited films was enhanced by a post hydrothermal treatment. A vapor phase treatment of the laser deposited FeAPO-5 films has been shown to increase the crystallinity of the film without increasing film thickness. Thin films of the FeAPO-5 molecular sieves were subsequently used as the dielectric phase in capacitive type chemical sensors. The capacitance change of the FeAPO-5 devices to the relative moisture makes them potential humidity sensors. The all silica zeolite UTD-1 thin films were deposited on polished silicon and porous supports. A brief post hydrothermal treatment of the laser deposited films deposited on polished silicon and porous metal supports resulted in oriented film growth lending these films to applications in gas separations and catalysis. The oriented UTD-1 membrane was evaluated for the separation of n-heptane/toluene mixture. Practicum two. It has been previously observed that residual moisture plays a role in ETV-ICP-MS by altering signal intensity. Here is reported observed signal intensities with ETV-ICP-MS, resulting from the use of hydrogen, nitrogen and ascorbic acid. The use of ascorbic acid yielded enhanced signal intensity, reproducibility and linearity compared to inorganic modifiers'.
Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes
NASA Technical Reports Server (NTRS)
Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana
2017-01-01
Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.
Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi
2017-01-01
Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec. PMID:28672868
Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi
2017-06-26
Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.
Antifuse with a single silicon-rich silicon nitride insulating layer
Habermehl, Scott D.; Apodaca, Roger T.
2013-01-22
An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0
Symmetric Absorber-Coupled Far-Infrared Microwave Kinetic Inductance Detector
NASA Technical Reports Server (NTRS)
U-yen, Kongpop (Inventor); Wollack, Edward J. (Inventor); Brown, Ari D. (Inventor); Stevenson, Thomas R. (Inventor); Patel, Amil A. (Inventor)
2016-01-01
The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.
Evaluation and ranking of candidate ceramic wafer engine seal materials
NASA Technical Reports Server (NTRS)
Steinetz, Bruce M.
1991-01-01
Modern engineered ceramics offer high temperature capabilities not found in even the best superalloy metals. The high temperature properties of several selected ceramics including aluminum oxide, silicon carbide, and silicon nitride are reviewed as they apply to hypersonic engine seal design. A ranking procedure is employed to objectively differentiate among four different monolithic ceramic materials considered, including: a cold-pressed and sintered aluminum oxide; a sintered alpha-phase silicon carbide; a hot-isostatically pressed silicon nitride; and a cold-pressed and sintered silicon nitride. This procedure is used to narrow the wide range of potential ceramics considered to an acceptable number for future detailed and costly analyses and tests. The materials are numerically scored according to their high temperature flexural strength; high temperature thermal conductivity; resistance to crack growth; resistance to high heating rates; fracture toughness; Weibull modulus; and finally according to their resistance to leakage flow, where materials having coefficients of thermal expansion closely matching the engine panel material resist leakage flow best. The cold-pressed and sintered material (Kyocera SN-251) ranked the highest in the overall ranking especially when implemented in engine panels made of low expansion rate materials being considered for the engine, including Incoloy and titanium alloys.
NASA Astrophysics Data System (ADS)
Dur, Ender; Cora, Ömer Necati; Koç, Muammer
2014-01-01
Metallic bipolar plate (BPP) with high corrosion and low contact resistance, durability, strength, low cost, volume, and weight requirements is one of the critical parts of the PEMFC. This study is dedicated to understand the effect of the process sequence (manufacturing then coating vs. coating then manufacturing) on the corrosion resistance of coated metallic bipolar plates. To this goal, three different PVD coatings (titanium nitride (TiN), chromium nitride (CrN), zirconium nitride (ZrN)), with three thicknesses, (0.1, 0.5, 1 μm) were applied on BPPs made of 316L stainless steel alloy before and after two types of manufacturing (i.e., stamping or hydroforming). Corrosion test results indicated that ZrN coating exhibited the best corrosion protection while the performance of TiN coating was the lowest among the tested coatings and thicknesses. For most of the cases tested, in which coating was applied before manufacturing, occurrence of corrosion was found to be more profound than the case where coating was applied after manufacturing. Increasing the coating thickness was found to improve the corrosion resistance. It was also revealed that hydroformed BPPs performed slightly better than stamped BPPs in terms of the corrosion behavior.
Zhang, Ya-li; Luo, Xiao-ping; Zhou, Li
2012-05-01
To study the effect of sintering gold paste coating of pure titanium on the adhesion of three porcelains following the protocol ISO 9693, and to investigate the titanium-porcelains interfaces. Sixty machined pure titanium samples were prepared in a rectangular shape according to ISO 9693 and divided equally into six groups. Half of the strips were coated with gold paste (Deckgold) and sintered. Three ultra-low-fusing dental porcelains (I: Initial Ti, S: Super porcelain Ti-22, T: TitanKeramik) were fused onto the titanium surfaces. A thin layer of bonding agent was only applied on the surfaces of uncoated gold specimens. The interface of the porcelain and titanium was observed with a field emission scanning electron microscope (FE-SEM) after metallographic preparation and sputtered with a very thin carbon layer of the embedded titanium-porcelain interface. After three-point bending test was performed, optical stereomicroscope was used to characterize the titanium-porcelains adhesion and determine the mode of failure. FE-SEM illustrated intermetallic compounds of Au-Ti formed with some visible microcracks in the gold layer and the interface of gold layer and ceramic. All the uncoated gold titanium-porcelain system showed predominately adhesive fracture at the titanium oxidation, whereas the failure modes in all gold coated systems were cohesive and adhesive, mainly cohesive. The three-point-bending test showed that the bonding strength of GS and GI groups [(37.08 ± 4.32) and (36.20 ± 2.40) MPa] were higher than those in uncoated groups [(31.56 ± 3.74) and (30.88 ± 2.60) MPa, P < 0.05], while no significant difference was found between T group and GT group (P > 0.05). The gold paste intermediate coatings can improve bond strengths of Super porcelain Ti-22 system and Initial Ti system, which have potential applications in clinical fields.
Nitridation-driven conductive Li4Ti5O12 for lithium ion batteries.
Park, Kyu-Sung; Benayad, Anass; Kang, Dae-Joon; Doo, Seok-Gwang
2008-11-12
To modify oxide structure and introduce a thin conductive film on Li4Ti5O12, thermal nitridation was adopted for the first time. NH3 decomposes surface Li4Ti5O12 to conductive TiN at high temperature, and surprisingly, it also modifies the surface structure in a way to accommodate the single phase Li insertion and extraction. The electrochemically induced Li4+deltaTi5O12 with a TiN coating layer shows great electrochemical properties at high current densities.
Corrosion resistance of monolayer hexagonal boron nitride on copper
Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.
2017-01-01
Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating. PMID:28191822
NASA Astrophysics Data System (ADS)
Gueorguiev, G. K.; Broitman, E.; Furlan, A.; Stafström, S.; Hultman, L.
2009-11-01
The energy cost for dangling bond formation in Fullerene-like Carbon Nitride (FL-CN x) and Phosphorus carbide (FL-CP x) as well as their amorphous counterparts: a-CN x, a-CP x, and a-C has been calculated within the framework of Density Functional Theory and compared with surface water adsorption measurements. The highest energy cost is found in the FL-CN x (about 1.37 eV) followed by FL-CP x compounds (0.62-1.04 eV).
Improvement of water resistance and dimensional stability of wood through titanium dioxide coating
Qingfeng Sun; Haipeng Yu; Yixing Liu; Jian Li; Yun Lu; John F. Hunt
2010-01-01
Moisture absorption and dimensional distortion are the major drawbacks of wood utilization as building material. In this study, poplar wood coated with a thin layer of titanium dioxide (TiO2) was prepared by the cosolvent-controlled hydrothermal method. Subsequently, its moisture absorption and dimensional stability were examined. Scanning...
High power RF window deposition apparatus, method, and device
Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel
2017-07-04
A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.
NASA Astrophysics Data System (ADS)
Tsai, K. V.; Maksimkin, O. P.; Turubarova, L. G.
2007-03-01
The formation and evolution of thermally-induced secondary precipitates in an austenitic stainless steel 12Kh18N9T irradiated in the core of a laboratory reactor VVR-K to a dose of 5 dpa and subjected to post-radiation isochronous annealings for 1 h in a temperature range from 450 to 1050°C have been studied using transmission electron microscopy (TEM) and microhardness measurements. It has been shown that the formation of stitch (secondary) titanium carbides and M 23C6 carbides at grain and twin boundaries after annealing at 1050°C is preceded by a complex evolution of fineparticles of secondary phases (titanium carbides and nitrides) precipitated at dislocation loops and dislocations during annealing at temperatures above 750°C.
NASA Astrophysics Data System (ADS)
Scherbak, Aleksandr; Yulmetova, Olga
2018-05-01
A pulsed fiber laser with the wavelength 1.06 μm was used to treat titanium nitride film deposited on beryllium substrates in the air with intensities below an ablation threshold to provide oxide formation. Laser oxidation results were predicted by the chemical thermodynamic method and confirmed by experimental techniques (X-ray diffraction). The developed technology of contrast image formation is intended to be used for optoelectronic read-out system.
Ion Beam Processing of Diamond
1990-05-07
Diamond structure. We can make ohmic contacts to silicon . If we could tailor the structure from Si to Si. C,-, to diamond, we should be able to form a low...func- ricr injection. Refractory metals such as tantalum. tung- tion of contact spacing. Extrapolation of the data to zero sten , or titanium have also...layer of the diamond could be miade n-type gallium nitride. and silicon carbide.- Mater. Sci. Fng.. vol. 91, pp.77-104.1(998. with a five to six orders
1976-05-01
since the platinum silicide and titanium metals also offer very low mobility to the alkaline ions, the BLSJ . is inert to sodium . Inversion and...gettering agents for sodium ions, thus making the cont&-nination far less mobile. The stability of the structural and electrical properties of the oxide...to be an effective barrier to sodium migration. In Beam Lead Sealed ,unction (BLSJ) devices, the silicon nitride seals the devices from sodium and
2014-05-10
based on modified fullerenes , carbon nanotubes and gold nanoparticles (including nanocages and nanorods) were very recently reported.4 Nevertheless, this...ratios of 1:1.6 and 1:16, in order to form an onion- like core-shell structure, containing TiN core and shells of TPP (inner shell) and chitosan (outer...These results nicely correlate with the cells viability results and the formation of the ROS is most likely the cause of the cells death (Figure 24
A conceptual design study of a high temperature solar thermal receiver (added tasks 6 and 7)
NASA Technical Reports Server (NTRS)
Robertson, C. S.; Mccreight, L. R.; Gatti, A.; Semon, H. W.
1980-01-01
The key component of this concept is a coiled tube of silicon nitride which acts as a heat exchanger appears to be ideal from the standpoint of utilizing structural ceramics at around 2500 F under severe thermal shock conditions. However the size and configuration of this coil are beyond the state of the art for fabricating such materials as silicon nitride and carbide. A two-task program to develop and demonstrate the feasibility of extruding and forming a section of thin walled silicon nitride tubing was undertaken as an addition to the original program. A promising polyvinyl butyral-based binder lubricant was identified. Fourteen full size extrusion experiments were conducted. Two trial firings of 1-1/4 turn helices were made.
Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.
Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong
2008-10-01
Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.
NASA Astrophysics Data System (ADS)
Găluşcă, D. G.; Perju, M. C.; Nejneru, C.; Burduhos Nergiş, D. D.; Lăzărescu, I. E.
2018-06-01
The modification of surface properties by duplex treatments, involving the overlapping of two surface treatment techniques, has been established as an intelligent solution to create new applications for the substrate metallic material. There are driveline components operating under very tough wear and corrosion conditions, with high temperature and humidity variations. Such components are usually made of high Cr and Ni stainless steel and for the hardening of surfaces it is recommended a thermo chemical treatment. Since stainless steels, especially austenitic stainless steels, are difficult to nitride, experimental studies focus on increasing the depth of the nitride layer and surface hardness. Achieving the goal involves changing active layer chemical composition by introducing aluminum in the surface layer. In order to find a solution, a new surface treatment technique is produced by combining aluminum thin films by MO-CVD in a fluidized bed using a triisobutylaluminum precursor with a thermo chemical nitriding treatment.
Impact of In situ Postnitridation Annealing for Successful Fabrication of HfSiON Thin Film
NASA Astrophysics Data System (ADS)
Horii, Sadayoshi; Ishikawa, Dai; Sano, Atsushi; Imai, Yoshinori; Kunii, Yasuo
2007-05-01
For the successful integration of high-k gate dielectrics into advanced complementary metal-oxide-semiconductor (CMOS) processes, it is important to determine the stability of high-k materials during exposure to an ambient atmosphere. In this work, we investigated the effect of exposure to air on the nitrogen concentration in HfSiON films formed by sequentially combining HfSiO chemical vapor deposition (CVD), plasma nitridation, and postnitridation annealing (PNA). We observed that exposure to air after the nitridation step reduces the nitrogen concentration due to a reaction between the HfSiON surface and the constituents of atmospheric air. We also found that exposure to air for even a short time between nitridation and PNA leads to a significant loss of nitrogen concentration, indicating that in situ PNA is critical for achieving precise control of the nitridation. These results confirmed the importance of using clustered multichamber platforms for successful high-k fabrication.
NASA Astrophysics Data System (ADS)
Désières, Yohan; Chen, Ding Yuan; Visser, Dennis; Schippers, Casper; Anand, Srinivasan
2018-06-01
Colloidal TiO2 nanoparticles were used for embossing of composite microcone arrays on III-Nitride vertical-thin-film blue light emitting diodes (LEDs) as well as on silicon, glass, gallium arsenide, and gallium nitride surfaces. Ray tracing simulations were performed to optimize the design of microcones for light extraction and to explain the experimental results. An optical power enhancement of ˜2.08 was measured on III-Nitride blue LEDs embossed with a hexagonal array of TiO2 microcones of ˜1.35 μm in height and ˜2.6 μm in base width, without epoxy encapsulation. A voltage increase in ˜70 mV at an operating current density of ˜35 A/cm2 was measured for the embossed LEDs. The TiO2 microcone arrays were embossed on functioning LEDs, using low pressures (˜100 g/cm2) and temperatures ≤100 °C.
Temperature induced complementary switching in titanium oxide resistive random access memory
DOE Office of Scientific and Technical Information (OSTI.GOV)
Panda, D., E-mail: dpanda@nist.edu; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan; Simanjuntak, F. M.
2016-07-15
On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device tomore » initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.« less
NASA Technical Reports Server (NTRS)
Dolan, F. X.; Kennedy, F. E.; Schulson, E. M.
1984-01-01
Cracking of the titanium knife edges on the labyrinth seals of the liquid hydrogen fuel pump in the Space Shuttle main engine is considered. Finite element analysis of the thermal response of the knife edge in sliding contact with the wear ring surface shows that interfacial temperatures can be quite high and they are significantly influenced by the thermal conductivity of the surfaces in rubbing contact. Thermal shock experiments on a test specimen similar to the knife edge geometry demonstrate that cracking of the titanium alloy is possible in a situation involving repeated thermal cycles over a wide temperature range, as might be realized during a rub in the liquid hydrogen fuel pump. High-speed rub interaction tests were conducted using a representative knife edge and seal geometry over a broad range of interaction rates and alternate materials were experimentally evaluated. Plasma-sprayed aluminum-graphite was found to be significantly better than presently used aluminum alloy seals from the standpoint of rub performance. Ion nitriding the titanium alloy knife-edges also improved rub performance compared to the untreated baseline.
An experimental investigation of rubbing interaction in labyrinth seals at cryogenic temperature
NASA Technical Reports Server (NTRS)
Dolan, F. X.; Kennedy, F. E.; Schulson, E. M.
1985-01-01
An experimental program was carried out to address issues related to the observed cracking of the titanium knife edges on the labyrinth seals of the high pressure fuel pump (HPFP) in the Space Shuttle main engine (SSME). Thermal shock experiments were carried out using a jet specimen with geometry similar to the knife edge geometry. These tests demonstrate that cracking of the titanium alloy is possible in a situation involving repeated thermal cycles over a wide temperature range, as might be realized during a rub in the liquid hydrogen fuel pump. High speed rub interaction tests were conducted using a representative knife edge and seal geometry over a broad range of interaction rates. Alternative materials were also experimentally evaluated. These tests provide information which can be used to design improved labyrinth seals for the HPFP of the SSME. In particular, plasma-sprayed aluminum-graphite was found to be significantly better than aluminum alloy seals used at present from the standpoint of rub performance. Ion nitriding of the titanium alloy knife edges was also found to improve rub performance compared with the untreated baseline knife edge material.
Future Bearing Surfaces in Total Hip Arthroplasty
2014-01-01
One of the most important issues in the modern total hip arthroplasty (THA) is the bearing surface. Extensive research on bearing surfaces is being conducted to seek an ideal bearing surface for THA. The ideal bearing surface for THA should have superior wear characteristics and should be durable, bio-inert, cost-effective, and easy to implant. However, bearing surfaces that are currently being implemented do not completely fulfill these requirements, especially for young individuals for whom implant longevity is paramount. Even though various new bearing surfaces have been investigated, research is still ongoing, and only short-term results have been reported from clinical trials. Future bearing surfaces can be developed in the following ways: (1) change in design, (2) further improvement of polyethylene, (3) surface modification of the metal, (4) improvement in the ceramic, and (5) use of alternative, new materials. One way to reduce wear and impingement in THA is to make changes in its design by using a large femoral head, a monobloc metal shell with preassembled ceramic liner, dual mobility cups, a combination of different bearing surfaces, etc. Polyethylene has improved over time with the development of highly crosslinked polyethylene. Further improvements can be made by reinforcing it with vitamin E or multiwalled carbon nanotubes and by performing a surface modification with a biomembrane. Surface modifications with titanium nitride or titanium niobium nitride are implemented to try to improve the metal bearings. The advance to the fourth generation ceramics has shown relatively promising results, even in young patients. Nevertheless, further improvement is required to reduce fragility and squeaking. Alternative materials like diamond coatings on surfaces, carbon based composite materials, oxidized zirconium, silicon nitride, and sapphire are being sought. However, long-term studies are necessary to confirm the efficacy of these surfaces after enhancements have been made with regard to fixation technique and implant quality. PMID:24605198
NASA Astrophysics Data System (ADS)
Kayed, Kamal
2018-06-01
The aim of this paper is to investigate the relationship between the micro structure and the surface charge effect resulted during XPS surface analysis of amorphous carbon nitride thin films prepared by laser ablation method. The study results show that the charge effect coefficient (E) is not just a correction factor. We found that the changes in this coefficient value due to incorporation of nitrogen atoms into the carbon network are related to the spatial configurations of the sp2 bonded carbon atoms, order degree and sp2 clusters size. In addition, results show that the curve E vs. C(sp3)-N is a characteristic curve of the micro structure. This means that using this curve makes it easy to sorting the samples according to the micro structure (hexagonal rings or chains).
Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals.
Wu, Yimin A; Kirkland, Angus I; Schäffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H
2011-05-13
We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moiré patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.
Hall effect of copper nitride thin films
NASA Astrophysics Data System (ADS)
Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.
2005-08-01
The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.
Mechanical properties of atomically thin boron nitride and the role of interlayer interactions
Falin, Aleksey; Cai, Qiran; Santos, Elton J. G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji; Taniguchi, Takashi; Barnett, Matthew R.; Chen, Ying; Ruoff, Rodney S.; Li, Lu Hua
2017-01-01
Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but investigation into their mechanical properties remains incomplete. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviours quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better interlayer integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, for example, as mechanical reinforcements. PMID:28639613
Gutiérrez Moreno, José Julio; Nolan, Michael
2017-11-01
Titanium nitride (TiN) is widely used in industry as a protective coating due to its hardness and resistance to corrosion and can spontaneously form a thin oxide layer when it is exposed to air, which could modify the properties of the coating. With limited understanding of the TiO 2 -TiN interfacial system at present, this work aims to describe the structural and electronic properties of oxidized TiN based on a density functional theory (DFT) study of the rutile TiO 2 (110)-TiN(100) interface model system, also including Hubbard +U correction on Ti 3d states. The small lattice mismatch gives a good stability to the TiO 2 -TiN interface after depositing the oxide onto TiN through the formation of interfacial Ti-O bonds. Our DFT+U study shows the presence of Ti 3+ cations in the TiO 2 region, which are preferentially located next to the interface region as well as the rotation of the rutile TiO 2 octahedra in the interface structure. The DFT+U TiO 2 electronic density of states (EDOS) shows localized Ti 3+ defect states forming in the midgap between the top edge of the valence and the bottom of the conduction band. We increase the complexity of our models by the introduction of nonstoichiometric compositions. Although the vacancy formation energies for Ti in TiN (E vac (Ti) ≥ 4.03 eV) or O in the oxide (E vac (O) ≥ 3.40 eV) are quite high relative to perfect TiO 2 -TiN, defects are known to form during the oxide growth and can therefore be present after TiO 2 formation. Our results show that a structure with exchanged O and N can lie 0.82 eV higher in energy than the perfect system, suggesting the stability of structures with interdiffused O and N anions at ambient conditions. The presence of N in TiO 2 introduces N 2p states localized between the top edge of the O 2p valence states and the midgap Ti 3+ 3d states, thus reducing the band gap in the TiO 2 region for the exchanged O/N interface EDOS. The outcomes of these simulations give us a most comprehensive insight on the atomic level structure and the electronic properties of oxidized TiN surfaces.
NASA Astrophysics Data System (ADS)
Lohmann, S.; Sortica, M. A.; Paneta, V.; Primetzhofer, D.
2018-02-01
We present a systematic analysis of the photon emission observed due to impact of pulsed keV ion beams in time-of-flight medium energy ion scattering (ToF-MEIS) experiments. Hereby, hydrogen, helium and neon ions served as projectiles and thin gold and titanium nitride films on different substrates were employed as target materials. The present experimental evidence indicates that a significant fraction of the photons has energies of around 10 eV, i.e. on the order of typical valence and conduction band transitions in solids. Furthermore, the scaling properties of the photon emission with respect to several experimental parameters were studied. A dependence of the photon yield on the projectile velocity was observed in all experiments. The photon yield exhibits a dependence on the film thickness and the scattering angle, which can be explained by photon production along the path of the incident ion through the material. Additionally, a strong dependence on the projectile type was found with the photon emission being higher for heavier projectiles. This difference is larger than the respective difference in electronic stopping cross section. The photon yield shows a strong material dependence, and according to a comparison of SiO2 and Si seems to be subject to matrix effects.
Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers
NASA Astrophysics Data System (ADS)
Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.
2014-09-01
The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.
NASA Technical Reports Server (NTRS)
Keller, L. E.; Lauer, J. L.; Jones, W. R., Jr.
1982-01-01
Infrared emission spectra and related measurements were obtained from an operating ball/plate EHD sliding contact under a variety of operating conditions. In order to be able to compare the effect of the ball surface, some of the steel balls were coated with a thin layer of titanium nitride (TiN) by vapor deposition. Polyphenyl ether (5P4E) was used as the lubricant and 1 percent of 1,1,2-trichloroethane TCE) as an additive with a high affinity for steel but a low affinity for TiN. TiN is chemically inert, but its thermal conductivity is lower than that of steel. Therefore, the overall temperatures with TiN-coated balls were higher. Nevertheless, no scuffng was observed with the coated balls under conditions giving rise to scuffing with the uncoated balls. Tractions were lower with the TiN-coated balls and with the steel balls when TCE was added to the 5P4E. These findings were found to be inversely related to the degree of polarization of the spectral emission bands. The intensity and the dichroism of these bands were related to shear rates and inlet conditions of the EHD contact.
NASA Astrophysics Data System (ADS)
Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.
2017-03-01
The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.
Microstructure analysis and wear behavior of titanium cermet femoral head with hard TiC layer.
Luo, Yong; Ge, Shirong; Liu, Hongtao; Jin, Zhongmin
2009-12-11
Titanium cermet was successfully synthesized and formed a thin gradient titanium carbide coating on the surface of Ti6Al4V alloy by using a novel sequential carburization under high temperature, while the titanium cermet femoral head was produced. The titanium cermet phase and surface topography were characterized with X-ray diffraction (XRD) and backscattered electron imaging (BSE). And then the wear behavior of titanium cermet femoral head was investigated by using CUMT II artificial joint hip simulator. The surface characterization indicates that carbon effectively diffused into the titanium alloys and formed a hard TiC layer on the Ti6Al4V alloys surface with a micro-porous structure. The artificial hip joint experimental results show that titanium cermet femoral head could not only improve the wear resistance of artificial femoral head, but also decrease the wear of UHMWPE joint cup. In addition, the carburized titanium alloy femoral head could effectively control the UHMWPE debris distribution, and increase the size of UHMWPE debris. All of the results suggest that titanium cermet is a prospective femoral head material in artificial joint.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at
In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.
Structural and magnetic properties of RTiNO{sub 2} (R=Ce, Pr, Nd) perovskite nitride oxides
DOE Office of Scientific and Technical Information (OSTI.GOV)
Porter, Spencer H.; Huang, Zhenguo, E-mail: zhenguo@uow.edu.au; Cheng, Zhenxiang
2015-03-15
Neutron powder diffraction indicates that CeTiNO{sub 2} and PrTiNO{sub 2} crystallize with orthorhombic Pnma symmetry (Ce: a=5.5580(5), b=7.8369(7), and c=5.5830(4) Å; Pr: a=5.5468(5), b=7.8142(5), and c=5.5514(5) Å) as a result of a{sup –}b{sup +}a{sup –} tilting of the titanium-centered octahedra. Careful examination of the NPD data, confirms the absence of long range anion order in both compounds, while apparent superstructure reflections seen in electron diffraction patterns provide evidence for short range anion order. Inverse magnetic susceptibility plots reveal that the RTiNO{sub 2} (R=Ce, Pr, Nd) compounds are paramagnetic with Weiss constants that vary from −28 to −42 K. Effective magneticmore » moments for RTiNO{sub 2} (R=Ce, Pr, Nd) are 2.43 μ{sub B}, 3.63 μ{sub B}, and 3.47 μ{sub B}, respectively, in line with values expected for free rare-earth ions. Deviations from Curie–Weiss behavior that occur below 150 K for CeTiNO{sub 2} and below 30 K for NdTiNO{sub 2} are driven by magnetic anisotropy, spin–orbit coupling, and crystal field effects. - Graphical abstract: The structure and magnetism of the oxide nitride perovskites RTiNO{sub 2} (R=Ce, Pr, Nd) have been explored. The average symmetry is shown to be Pnma with a random distribution of oxide and nitride ions and a{sup −}b{sup +}a{sup −} tilting of the titanium-centered octahedra, but electron diffraction shows evidence for short range anion order. All three compounds are paramagnetic but deviations from the Curie Weiss law are seen below 150 K for R=Ce and below 30 K for R=Nd. - Highlights: • The oxide nitride perovskites RTiNO{sub 2} (R=Ce, Pr) have been prepared and their structures determined. • Diffraction measurements indicate short range cis-order of O and N, but no long range order. • Compounds are paramagnetic with Weiss constants that vary from −28 to −42 K. • CeTiO{sub 2}N and NdTiO{sub 2}N deviate from Curie–Weiss behavior below 150 and 30 K, respectively.« less
Highly Active GaN-Stabilized Ta3 N5 Thin-Film Photoanode for Solar Water Oxidation.
Zhong, Miao; Hisatomi, Takashi; Sasaki, Yutaka; Suzuki, Sayaka; Teshima, Katsuya; Nakabayashi, Mamiko; Shibata, Naoya; Nishiyama, Hiroshi; Katayama, Masao; Yamada, Taro; Domen, Kazunari
2017-04-18
Ta 3 N 5 is a very promising photocatalyst for solar water splitting because of its wide spectrum solar energy utilization up to 600 nm and suitable energy band position straddling the water splitting redox reactions. However, its development has long been impeded by poor compatibility with electrolytes. Herein, we demonstrate a simple sputtering-nitridation process to fabricate high-performance Ta 3 N 5 film photoanodes owing to successful synthesis of the vital TaO δ precursors. An effective GaN coating strategy is developed to remarkably stabilize Ta 3 N 5 by forming a crystalline nitride-on-nitride structure with an improved nitride/electrolyte interface. A stable, high photocurrent density of 8 mA cm -2 was obtained with a CoPi/GaN/Ta 3 N 5 photoanode at 1.2 V RHE under simulated sunlight, with O 2 and H 2 generated at a Faraday efficiency of unity over 12 h. Our vapor-phase deposition method can be used to fabricate high-performance (oxy)nitrides for practical photoelectrochemical applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Tian, Xiaojuan; Li, Yun; Chen, Zhuo; Li, Qi; Hou, Liqiang; Wu, Jiaye; Tang, Yushu; Li, Yongfeng
2017-12-19
Boron nitride nanosheets (BNNS) hold the similar two-dimensional structure as graphene and unique properties complementary to graphene, which makes it attractive in application ranging from electronics to energy storage. The exfoliation of boron nitride (BN) still remains challenge and hinders the applications of BNNS. In this work, the preparation of BNNS has been realized by a shear-assisted supercritical CO 2 exfoliation process, during which supercritical CO 2 intercalates and diffuses between boron nitride layers, and then the exfoliation of BN layers is obtained in the rapid depressurization process by overcoming the van der Waals forces. Our results indicate that the bulk boron nitride has been successfully exfoliated into thin nanosheets with an average 6 layers. It is found that the produced BNNS is well-dispersed in isopropyl alcohol (IPA) with a higher extinction coefficient compared with the bulk BN. Moreover, the BNNS/epoxy composite used as thermal interface materials has been prepared. The introduction of BNNS results in a 313% enhancement in thermal conductivity. Our results demonstrate that BNNS produced by supercritical CO 2 exfoliation show great potential applications for heat dissipation of high efficiency electronics.
Failure Mechanisms of the Protective Coatings for the Hot Stamping Applications
NASA Astrophysics Data System (ADS)
Zhao, Chen
In the present study, four different nitriding techniques were carried on the ductile irons NAAMS-D6510 and cast steels NAAMS-S0050A, which are widely used stamping die materials; duplex treatments (PVD CrN coating+nitriding) were carried on H13 steels, which are common inserts for the hot stamping dies. Inclined impact-sliding wear tests were performed on the nitriding cases under simulated stamping conditions. Surface profilometer, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) were used to investigate the wear and failure mechanisms of the protective coatings. It was found that the nitrided ductile iron samples performed better than the nitrided cast steel specimens. High temperature inclined impact-sliding wear tests were carried out on the CrN coatings. It was found that the coating performed better at elevated temperature. XPS analysis indicated the top surface layer (about 3-4nm) of the coating was oxidized at 400 °C and formed a Cr2O3 protective film. The in-situ formation of the thin Cr2O3 protective layer likely led to the change of wear mechanisms from severe adhesive failure to mild abrasive wear.
NASA Astrophysics Data System (ADS)
Ahmad, M. K.; Rusop, M.
2009-06-01
Nanostructured Titanium Dioxide (TiO2) thin film with various sol-gel concentration has been successfully prepared using sol-gel spin coating method. The sol-gel concentration of nanostructured TiO2 thin films are varied at 0.1 M, 0.2 M, 0.3 M and 0.4 M, respectively. The effects of different sol-gel concentration of nanostructured TiO2 thin film structural, electrical and optical properties have been studied. The effects of these properties were characterized using X-Ray Diffractometer (XRD), 2-point probe I-V measurement and UV-Vis-NIR Spectrophotometer. For electrical properties, 0.2 M of sol-gel concentration gives the lowest sheet resistance among other concentrated sol-gels. As for structural properties, 0.1 M of concentration gives very weak peak, and continues stronger as in comes to 0.2 M until 0.4 M. It is due to amount of solute (i.e Titanium Isopropoxide) increases in the solution and therefore the intensity of (101) planes become higher. The optical transmission in the visible region (450-1000 nm) for 0.1 M and 0.2 M are the highest (>80%), indicating that the films are transparent in the visible region. The transmission decreases sharply near the ultraviolet region due to the band gap absorption.
Nanostructured Gd3+-TiO2 surfaces for self-cleaning application
NASA Astrophysics Data System (ADS)
Saif, M.; El-Molla, S. A.; Aboul-Fotouh, S. M. K.; Ibrahim, M. M.; Ismail, L. F. M.; Dahn, Douglas C.
2014-06-01
Preparation of self-cleaning surfaces based on lanthanide modified titanium dioxide nanoparticles has rarely been reported. In the present work, gadolinium doped titanium dioxide thin films (x mol Gd3+-TiO2 where x = 0.000, 0.005, 0.008, 0.010, 0.020 and 0.030 mol) were synthesized by sol-gel method and deposited using doctor-blade method. These films were characterized by studying their structural, optical and electrical properties. Doping with gadolinium decreases the band gap energy and increase conductivity of thin films. The photo self-cleaning activity in term of quantitative determination of the active oxidative species (rad OH) produced on the thin film surfaces was evaluated using fluorescent probe method. The results show that, the highly active thin film is the 0.020 Gd3+-TiO2. The structural, morphology, optical, electrical and photoactivity properties of Gd3+-TiO2 thin films make it promising surfaces for self-cleaning application. Mineralization of commercial textile dye (Remazol Red RB-133, RR) and durability using 0.020Gd3+-TiO2 film surface was studied.
Gordon, Roy G.; Kurtz, Sarah
1984-11-27
In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.
Vora, Hitesh D; Shanker Rajamure, Ravi; Dahotre, Sanket N; Ho, Yee-Hsien; Banerjee, Rajarshi; Dahotre, Narendra B
2014-09-01
A laser based surface nitriding process was adopted to further enhance the osseo-integration, corrosion resistance, and tribological properties of the commonly used bioimplant alloy, Ti-6Al-4V. Earlier preliminary osteoblast, electrochemical, and corrosive wear studies of laser nitrided titanium in simulated body fluid clearly revealed improvement of cell adhesion as well as enhancement in corrosion and wear resistance but mostly lacked the in-depth fundamental understanding behind these improvements. Therefore, a novel integrated experimental and theoretical approach were implemented to understand the physical phenomena behind the improvements and establish the property-structure-processing correlation of nitrided surface. The first principle and thermodynamic calculations were employed to understand the thermodynamic, electronic, and elastic properties of TiN for enthalpy of formation, Gibbs free energy, density of states, and elastic properties of TiN were investigated. Additionally, open circuit potential and cyclic potentio-dynamic polarization tests were carried out in simulated body fluid to evaluate the corrosion resistance that in turn linked with the experimentally measured and computationally predicted surface energies of TiN. From these results, it is concluded that the enhancement in the corrosion resistance after laser nitriding is mainly attributed to the presence of covalent bonding via hybridization among Ti (p) and N (d) orbitals. Furthermore, mechanical properties, such as, Poisson׳s ratio, stiffness, Pugh׳s ductility criteria, and Vicker׳s hardness, predicted from first principle calculations were also correlated to the increase in wear resistance of TiN. All the above factors together seem to have contributed to significant improvement in both wear and corrosion performance of nitride surface compared to the bare Ti-6Al-4V in physiological environment indicating its suitability for bioimplant applications. Copyright © 2014 Elsevier Ltd. All rights reserved.
Electrochromic TiO2 Thin Film Prepared by Dip-Coating Technique
NASA Astrophysics Data System (ADS)
Suriani, S.; Kamisah, M. M.
2002-12-01
Titanium dioxide (TiO2) thin films were prepared by using sol-gel dip coating technique. The coating solutions were prepared by reacting titanium isopropoxide as precursors and ethanol as solvent. The films were formed on transparent ITO-coated glass by a dip coating technique and final dried at various temperatures up to 600 °C for 30 minutes. The films were characterized with the UV-Vis-NIR Spectrometer, Scanning Electron Microscopy (SEM) and X-ray diffractometer (XRD). XRD results show that the films dried at 600 °C form anatase structure. From the spectroscopic studies, the sample shows electrochromic property.
Gondal, Mohammed A; Chang, Xiao F; Yamani, Zain H; Yang, Guo F; Ji, Guang B
2011-01-01
Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.
Mechanical properties of thin films of laser-welded titanium and their associated welding defects.
Wu, Yulu; Xin, Haitao; Zhang, Chunbao; Tang, Zhongbin; Zhang, Zhiyuan; Wang, Weifeng
2014-11-01
The aim of this study was to evaluate the mechanical properties of thin films of laser-welded cast titanium using an interference strain/displacement gauge (ISDG) and to analyze factors that affect laser welding. Dog-bone-shaped small specimens of cast titanium were prepared by wire cutting after they were laser-welded. The specimens were divided into three groups according to the gap distance of the laser weld; the control was non-welded titanium. Small specimens without cast defects detected by X-ray screening were measured by a tensile test machine using ISDG, and stress-strain curves were drawn. Finally, the fracture texture was analyzed. The ultimate tensile strengths (UTSs) of specimens with a gap distance of 0.00, 0.25, and 0.50 mm were 492.16 ± 33.19, 488.09 ± 43.18, and 558.45 ± 10.80 MPa, respectively. There were no significant differences in UTS between the test groups and the control group (p > 0.05). However, the plastic deformation and the percent elongation increased as the gap distance increased. Incomplete penetration defects appeared in groups that had small gap distances, which may have affected the properties of the laser-welded titanium. However, the welding material was still pure titanium. These results suggest that an appropriate gap distance should be maintained to improve the application of dental laser welding.
Electrically Detected Study of Variable Range Hopping in Silicon Nitrides
NASA Astrophysics Data System (ADS)
Waskiewicz, Ryan; Mutch, Michael; Lenahan, Patrick; King, Sean
Electrically detected magnetic resonance (EDMR) offers greatly improved sensitivity over conventional electron paramagnetic resonance (EPR) studies in semiconductor/insulator systems; in EDMR measurements, one observes EPR via changes in device currents which are spin-dependent. In our study, we observe EDMR via spin-dependent trap assisted tunneling (SDTAT) via variable range hopping (VRH) through stoichiometric silicon nitride dielectric films. In these films, leakage current effectively changes at resonance. In our study, we have investigated the EDMR response as a function of dielectric electric field and temperature for films of various thicknesses. We believe that these measurements allow us to identify the defects responsible for transport in such these thin films using EDMR and to some extent measure the distances between the defects. The separation between the defects can, at least in principle, be measured using the recently demonstrated half-field EDMR response and we can also count total number of spins responsible for transport through dielectric films. Although we present results only on silicon nitride thin films, we believe that the approach utilized will be widely applicable to other dielectric films in which electronic transport is of interest. This project is sponsored in part by Intel Corporation and in part by the Department of Defense, Defense Threat Reduction Agency under Grant Number HDTRA1-16-0008.
NASA Astrophysics Data System (ADS)
Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.
2016-11-01
Carbide signatures are ubiquitous in the surface analyses of industrially sputter-deposited transition metal nitride thin films grown with carbon-less source materials in typical high-vacuum systems. We use high-energy-resolution photoelectron spectroscopy to reveal details of carbon temporal chemical state evolution, from carbide formed during film growth to adventitious carbon adsorbed upon contact with air. Using in-situ grown Al capping layers that protect the as-deposited transition metal nitride surfaces from oxidation, it is shown that the carbide forms during film growth rather than as a result of post deposition atmosphere exposure. The XPS signature of carbides is masked by the presence of adventitious carbon contamination, appearing as soon as samples are exposed to atmosphere, and eventually disappears after one week-long storage in lab atmosphere. The concentration of carbon assigned to carbide species varies from 0.28 at% for ZrN sample, to 0.25 and 0.11 at% for TiN and HfN, respectively. These findings are relevant for numerous applications, as unintentionally formed impurity phases may dramatically alter catalytic activity, charge transport and mechanical properties by offsetting the onset of thermally-induced phase transitions. Therefore, the chemical state of C impurities in PVD-grown films should be carefully investigated.
NASA Astrophysics Data System (ADS)
Lee, Jun S.; Shin, Kyung S.; Sahu, B. B.; Han, Jeon G.
2015-09-01
In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as 7 . 3 ×10-3 g/m2/day. Also at Chiang Mai University.
Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency
NASA Astrophysics Data System (ADS)
Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.
2017-10-01
An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.
NASA Astrophysics Data System (ADS)
Liu, Zhengdao; Zhang, Xiancheng; Xuan, Fuzhen; Wang, Zhengdong; Tu, Shandong
2013-07-01
Laser nitriding is one of the effective techniques to improve the surface properties of titanium alloys and has potential application in the life extension of last-stage steam turbine blades. However, cracking of surface coating is a common problem due to heat concentration in laser nitriding process. Conventionally, the cracks can be avoided through heat treatment, which may have an important influence on the mechanical properties of coating. Crack-free TiN/Ti3Al IMC coatings on Ti6Al4V are prepared by plasma spraying and laser nitriding. The microstructures, phase constitutes and compositions of the coating are observed and analyzed with scanning electron microscopy(SEM), X-ray diffraction(XRD) and X-ray energy-dispersive spectroscopy(EDS). Microhardness, elastic modulus, fracture toughness of the coating are measured. The results show that the crack- and pore-free IMC coatings can be made through the proposed method; with increasing laser power, the amount and density of TiN phase in the coating first increased and then decreased, leading to the similar trend of microhardness and elastic modulus and the reverse trend of fracture toughness of the coating. Both the average microhardness and elastic modulus of the coating increase three times higher than those of the substrate. The volume fraction of the TiN reinforced phase in composite can be controlled by varying the laser power and the cracking problem in laser nitriding process is successfully solved.
Intermetallic Nickel-Titanium Alloys for Oil-Lubricated Bearing Applications
NASA Technical Reports Server (NTRS)
DellaCorte, C.; Pepper, S. V.; Noebe, R.; Hull, D. R.; Glennon, G.
2009-01-01
An intermetallic nickel-titanium alloy, NITINOL 60 (60NiTi), containing 60 wt% nickel and 40 wt% titanium, is shown to be a promising candidate material for oil-lubricated rolling and sliding contact applications such as bearings and gears. NiTi alloys are well known and normally exploited for their shape memory behavior. When properly processed, however, NITINOL 60 exhibits excellent dimensional stability and useful structural properties. Processed via high temperature, high-pressure powder metallurgy techniques or other means, NITINOL 60 offers a broad combination of physical properties that make it unique among bearing materials. NITINOL 60 is hard, electrically conductive, highly corrosion resistant, less dense than steel, readily machined prior to final heat treatment, nongalling and nonmagnetic. No other bearing alloy, metallic or ceramic encompasses all of these attributes. Further, NITINOL 60 has shown remarkable tribological performance when compared to other aerospace bearing alloys under oil-lubricated conditions. Spiral orbit tribometer (SOT) tests were conducted in vacuum using NITINOL 60 balls loaded between rotating 440C stainless steel disks, lubricated with synthetic hydrocarbon oil. Under conditions considered representative of precision bearings, the performance (life and friction) equaled or exceeded that observed with silicon nitride or titanium carbide coated 440C bearing balls. Based upon this preliminary data, it appears that NITINOL 60, despite its high titanium content, is a promising candidate alloy for advanced mechanical systems requiring superior and intrinsic corrosion resistance, electrical conductivity and nonmagnetic behavior under lubricated contacting conditions.
Electrochemical anodizing treatment to enhance localized corrosion resistance of pure titanium.
Prando, Davide; Brenna, Andrea; Bolzoni, Fabio M; Diamanti, Maria V; Pedeferri, Mariapia; Ormellese, Marco
2017-01-26
Titanium has outstanding corrosion resistance due to the thin protective oxide layer that is formed on its surface. Nevertheless, in harsh and severe environments, pure titanium may suffer localized corrosion. In those conditions, costly titanium alloys containing palladium, nickel and molybdenum are used. This purpose investigated how it is possible to control corrosion, at lower cost, by electrochemical surface treatment on pure titanium, increasing the thickness of the natural oxide layer. Anodic oxidation was performed on titanium by immersion in H2SO4 solution and applying voltages ranging from 10 to 80 V. Different anodic current densities were considered. Potentiodynamic tests in chloride- and fluoride-containing solutions were carried out on anodized titanium to determine the pitting potential. All tested anodizing treatments increased corrosion resistance of pure titanium, but never reached the performance of titanium alloys. The best corrosion behavior was obtained on titanium anodized at voltages lower than 40 V at 20 mA/cm2. Titanium samples anodized at low cell voltage were seen to give high corrosion resistance in chloride- and fluoride-containing solutions. Electrolyte bath and anodic current density have little effect on the corrosion behavior.
Iodine isothermal migration behaviour in titanium nitride
NASA Astrophysics Data System (ADS)
Gavarini, S.; Jaffrezic, H.; Martin, P.; Peaucelle, C.; Toulhoat, N.; Cardinal, S.; Moncoffre, N.; Pichon, C.; Tribet, M.
2008-02-01
Titanium nitride is one of the inert matrixes proposed to surround the fuel in gas cooled fast reactor (GFR) systems. These reactors will operate at high temperature and refractory materials with a high chemical stability and good mechanical properties are required. Furthermore, a total retention of the most volatile fission products, such as I, Xe or Cs, by the inert matrix is needed during the in-pile process. The isothermal migration of iodine in TiN was studied by implanting 800 keV I ++ ions in sintered samples at an ion fluence of 5 × 10 15 cm -2. Thermal treatments were performed under secondary vacuum at temperatures ranging from 1200 to 1700 °C. Iodine concentration profiles were determined by 2.5 MeV α-particle elastic backscattering. The migration of iodine seems to be correlated with point defects created by implanted ions near the surface. The Arrhenius plot corresponding to iodine detrapping is curved with possibly two straight-line regions which could indicate either the presence of two types of traps, or a strong dependence of trap's concentration on temperature above 1500 °C. The activation energies associated with each linear region of the Arrhenius plot were found to be: Ea = 2.4 ± 0.2 eV below 1500 °C and E=11.4±0.2 eV above 1500 °C. Nitrogen evaporation from TiN surface under secondary vacuum was proposed as a contributing factor to the enhanced mobility of iodine at high temperature.
Adnan, Mohammed; Marincel, Daniel M; Kleinerman, Olga; Chu, Sang-Hyon; Park, Cheol; Hocker, Samuel J A; Fay, Catharine; Arepalli, Sivaram; Talmon, Yeshayahu; Pasquali, Matteo
2018-03-14
Due to recent advances in high-throughput synthesis, research on boron nitride nanotubes (BNNTs) is moving toward applications. One future goal is the assembly of macroscopic articles of high-aspect-ratio, pristine BNNTs. However, these articles are presently unattainable because of insufficient purification and fabrication methods. We introduce a solution process for extracting BNNTs from synthesis impurities without sonication or the use of surfactants and proceed to convert the extracted BNNTs into thin films. The solution process can also be used to convert as-synthesized material-which contains significant amounts of hexagonal boron nitride ( h-BN)-into mats and aerogels with controllable structure and dimension. The solution extraction method, combined with further advances in synthesis and purification, contributes to the development of all-BNNT macroscopic articles, such as fibers and 3-D structures.
Surface Structure and Photocatalytic Activity of Nano-TiO2 Thin Film
Controlled titanium dioxide (TiO2) thin films were deposited on stainless steel surfaces using flame aerosol synthetic technique, which is a one-step coating process, that doesn’t require further calcination. Solid state characterization of the coatings was conducted by different...
Tribology of bio-inspired nanowrinkled films on ultrasoft substrates.
Lackner, Juergen M; Waldhauser, Wolfgang; Major, Lukasz; Teichert, Christian; Hartmann, Paul
2013-01-01
Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum) with high elasticity of the bulk (epidermis, dermis, hypodermis). The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue): Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC) and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high and the initial friction coefficient of the film against the sliding counterpart low, e.g. found for DLC.
Tribology of bio-inspired nanowrinkled films on ultrasoft substrates
Lackner, Juergen M.; Waldhauser, Wolfgang; Major, Lukasz; Teichert, Christian; Hartmann, Paul
2013-01-01
Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum) with high elasticity of the bulk (epidermis, dermis, hypodermis). The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue): Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC) and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high and the initial friction coefficient of the film against the sliding counterpart low, e.g. found for DLC. PMID:24688710
Isotropic plasma etching of Ge Si and SiN x films
Henry, Michael David; Douglas, Erica Ann
2016-08-31
This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.
Large Excitonic Reflectivity of Monolayer MoSe2 Encapsulated in Hexagonal Boron Nitride
NASA Astrophysics Data System (ADS)
Scuri, Giovanni; Zhou, You; High, Alexander A.; Wild, Dominik S.; Shu, Chi; De Greve, Kristiaan; Jauregui, Luis A.; Taniguchi, Takashi; Watanabe, Kenji; Kim, Philip; Lukin, Mikhail D.; Park, Hongkun
2018-01-01
We demonstrate that a single layer of MoSe2 encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor. We show that the MoSe2 monolayer exhibits power-and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used.
NASA Astrophysics Data System (ADS)
Tabataba-Vakili, Farsane; Roland, Iannis; Tran, Thi-Mo; Checoury, Xavier; El Kurdi, Moustafa; Sauvage, Sébastien; Brimont, Christelle; Guillet, Thierry; Rennesson, Stéphanie; Duboz, Jean-Yves; Semond, Fabrice; Gayral, Bruno; Boucaud, Philippe
2017-09-01
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.
Friction and wear behavior of single-crystal silicon carbide in contact with titanium
NASA Technical Reports Server (NTRS)
Miyoshi, K.; Buckley, D. H.
1977-01-01
Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).
Experimental test of 200 W Hall thruster with titanium wall
NASA Astrophysics Data System (ADS)
Ding, Yongjie; Sun, Hezhi; Peng, Wuji; Xu, Yu; Wei, Liqiu; Li, Hong; Li, Peng; Su, Hongbo; Yu, Daren
2017-05-01
We designed a 200 W Hall thruster based on the technology of pushing down a magnetic field with two permanent magnetic rings. Boron nitride (BN) is an important insulating wall material for Hall thrusters. The discharge characteristics of the designed Hall thruster were studied by replacing BN with titanium (Ti). Experimental results show that the designed Hall thruster can discharge stably for a long time under a Ti channel. Experiments were performed to determine whether the channel and cathode are electrically connected. When the channel wall and cathode are insulated, the divergence angle of the plume increases, but the performance of the Hall thruster is improved in terms of thrust, specific impulse, anode efficiency, and thrust-to-power ratio. Ti exhibits a powerful antisputtering capability, a low emanation rate of gas, and a large structural strength, making it a potential candidate wall material in the design of low-power Hall thrusters.
Femtosecond ablation of ultrahard materials
NASA Astrophysics Data System (ADS)
Dumitru, G.; Romano, V.; Weber, H. P.; Sentis, M.; Marine, W.
Several ultrahard materials and coatings of definite interest for tribological applications were tested with respect to their response when irradiated with fs laser pulses. Results on cemented tungsten carbide and on titanium carbonitride are reported for the first time and compared with outcomes of investigations on diamond and titanium nitride. The experiments were carried out in air, in a regime of 5-8 J/cm2 fluences, using the beam of a commercial Ti:sapphire laser. The changes induced in the surface morphology were analysed with a Nomarski optical microscope, and with SEM and AFM techniques. From the experimental data and from the calculated incident energy density distributions, the damage and ablation threshold values were determined. As expected, the diamond showed the highest threshold, while the cemented tungsten carbide exhibited typical values for metallic surfaces. The ablation rates determined (under the above-mentioned experimental conditions) were in the range 0.1-0.2 μm per pulse for all the materials investigated.
Unmanned Aerial Vehicles Roadmap 2000-2025
2001-04-01
Develop and mature enabling materials technologies such as gamma titanium aluminides , refractory intermetallic alloys, ceramic matrix composites, higher...percent (see Figure 4.1.2-1). For UAV use, these goals may partially be met by deleting turbine blade containment rings and redundant controls, as well...and Barium Strontium Titanium (BST) used in uncooled LWIR detectors, and fabrication techniques of thin pixels will enable improved thermal
NASA Astrophysics Data System (ADS)
Chang, C. W.; Wadekar, P. V.; Guo, S. S.; Cheng, Y. J.; Chou, M.; Huang, H. C.; Hsieh, W. C.; Lai, W. C.; Chen, Q. Y.; Tu, L. W.
2018-01-01
For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar m-plane gallium nitride ( m-GaN) thin films are studied. The samples were grown using plasma-assisted molecular beam epitaxy on m-plane sapphire substrates. Growth of pure m-GaN thin films, concomitant with smooth surfaces is possible at low radio frequency powers and high growth temperatures as judged by the high resolution x-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Defect types and densities are quantified using transmission electron microscopy, while Raman spectroscopy was used to analyze the in-plane stress in the thin films which matches the lattice mismatch analysis. Energy dispersive spectroscopy and cathodoluminescence support a congruent growth and a dominant near band edge emission. From the analysis, a narrow growth window is discovered wherein epitaxial growth of pure m-plane GaN samples free of secondary phases with narrow rocking curves and considerable smooth surfaces are successfully demonstrated.
The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene
NASA Astrophysics Data System (ADS)
Mikšová, R.; Hnatowicz, V.; Macková, A.; Malinský, P.; Slepička, P.
2015-07-01
The stopping power and energy straggling of 12C3+ and 16O3+ ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C3+ ion energy losses comparing to O3+ ions. The experimental data from Paul's database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr's, Yang's models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%.