The nitrate response of a lowland catchment and groundwater travel times

NASA Astrophysics Data System (ADS)

van der Velde, Ype; Rozemeijer, Joachim; de Rooij, Gerrit; van Geer, Frans

2010-05-01

Intensive agriculture in lowland catchments causes eutrophication of downstream waters. To determine effective measures to reduce the nutrient loads from upstream lowland catchments, we need to understand the origin of long-term and daily variations in surface water nutrient concentrations. Surface water concentrations are often linked to travel time distributions of water passing through the saturated and unsaturated soil of the contributing catchment. This distribution represents the contact time over which sorption, desorption and degradation takes place. However, travel time distributions are strongly influenced by processes like tube drain flow, overland flow and the dynamics of draining ditches and streams and therefore exhibit strong daily and seasonal variations. The study we will present is situated in the 6.6 km2 Hupsel brook catchment in The Netherlands. In this catchment nitrate and chloride concentrations have been intensively monitored for the past 26 years under steadily decreasing agricultural inputs. We described the complicated dynamics of subsurface water fluxes as streams, ditches and tube drains locally switch between active or passive depending on the ambient groundwater level by a groundwater model with high spatial and temporal resolutions. A transient particle tracking approach is used to derive a unique catchment-scale travel time distribution for each day during the 26 year model period. These transient travel time distributions are not smooth distributions, but distributions that are strongly spiked reflecting the contribution of past rainfall events to the current discharge. We will show that a catchment-scale mass response function approach that only describes catchment-scale mixing and degradation suffices to accurately reproduce observed chloride and nitrate surface water concentrations as long as the mass response functions include the dynamics of travel time distributions caused by the highly variable connectivity of the surface water network.

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Lightning Pin Injection Testing on MOSFETS

NASA Technical Reports Server (NTRS)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Jun-Sik; Rim, Taiuk; Kim, Jungsik; Kim, Kihyun; Baek, Chang-Ki; Jeong, Yoon-Ha

2015-03-01

Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

PubMed

Chatterjee, Prasenjit; Chow, Hwang-Cherng; Feng, Wu-Shiung

2016-08-30

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T(-1)), which is very effective as compared to other previously reported works for a single device.

A theoretical approach to study the optical sensitivity of a MESFET

NASA Astrophysics Data System (ADS)

Dutta, Sutanu

2018-05-01

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect transistor has been proposed for a relatively high drain field. An analytical expression of drain current of the device has been derived for a MESFET under optical illumination considering field dependent mobility of electrons across the channel. The variation of drain current with and without optical illumination has been studied with drain and gate voltages. The optical sensitivity of the drain current has been studied for different biasing conditions and gate lengths. In addition, the shift in threshold voltage of a MESFET under optical illumination is determined and optical sensitivity of the device in terms of its threshold voltage has been studied.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

Alternative to Agricultural Drains in California's San Joaquin Valley: Results of a Regional-Scale Hydrogeologic Approach

NASA Astrophysics Data System (ADS)

Belitz, Kenneth; Phillips, Steven P.

1995-08-01

The occurrence of selenium in agricultural drainage water derived from the central part of the western San Joaquin Valley has focused concern on alternatives to agricultural drains for managing shallow, poor-quality groundwater. A transient, three-dimensional simulation model was developed to evaluate the response of the water table to alternatives that affect recharge to or discharge from the groundwater flow system. The modeled area is 551 mi2 (1 mi2 = 2.59 km2) and includes both the semiconfined and confined zones above and below the Corcoran Clay Member of the Tulare Formation of Pleistocene age. The simulation model was calibrated using hydrologic data from 1972 to 1988, and was extended to the year 2040 to forecast for various management alternatives, including maintenance of present practices, land retirement, reduced recharge, increased groundwater pumping, and combinations of these alternatives. Maintenance of present practices results in a worsening of the situation: the total area subject to bare-soil evaporation increases from 224 mi2 in 1990 to 344 mi2 in 2040, and drain flow increases from 25,000 ac ft/yr (1 ac ft = 1234 m3) to 28,000 ac ft/yr. Although land retirement results in elimination of bare-soil evaporation and drain flow in the areas retired, it has little to no effect in adjacent areas. In contrast, regional-scale changes in recharge and pumping are effective for regional management. The area subject to bare-soil evaporation can be reduced to 78 mi2, and drain flow to 8000 ac ft/yr if (1) recharge is reduced by 15% (26,000 ac ft/yr) in areas that currently use surface and groundwater (362 mi2); (2) recharge is reduced by 40% (28,000 ac ft/yr) in areas that currently use only surface water (137 mi2); and (3) pumping rates are uniformly incremented by 0.5 ft/yr (160,000 ac ft/yr) in both areas. If these water budget changes were to be implemented in the study area, and in adjacent areas with similiar Hydrogeologic characteristics, then approximately 400,000 ac ft/yr of surface water would be made available. Thus a shift in the hydrologic budget in the central part of the western San Joaquin Valley improves the prospects for sustaining agriculture in the area, and could provide substantial water resources for other uses.

Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valin, R., E-mail: r.valinferreiro@swansea.ac.uk; Martinez, A., E-mail: a.e.Martinez@swansea.ac.uk; Barker, J. R., E-mail: john.barker@glasgow.ac.uk

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. Thismore » effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.« less

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression

NASA Astrophysics Data System (ADS)

Singh, Kirmender; Bhattacharyya, A. B.

2017-03-01

Gummel Symmetry Test (GST) has been a benchmark industry standard for MOSFET models and is considered as one of important tests by the modeling community. BSIM4 MOSFET model fails to pass GST as the drain current equation is not symmetrical because drain and source potentials are not referenced to bulk. BSIM6 MOSFET model overcomes this limitation by taking all terminal biases with reference to bulk and using proper velocity saturation (v -E) model. The drain current equation in BSIM6 is charge based and continuous in all regions of operation. It, however, adopts a complicated method to compute source and drain charges. In this work we propose to use conventional charge based method formulated by Enz for obtaining simpler analytical drain current expression that passes GST. For this purpose we adopt two steps: (i) In the first step we use a modified first-order hyperbolic v -E model with adjustable coefficients which is integrable, simple and accurate, and (ii) In the second we use a multiplying factor in the modified first-order hyperbolic v -E expression to obtain correct monotonic asymptotic behavior around the origin of lateral electric field. This factor is of empirical form, which is a function of drain voltage (vd) and source voltage (vs) . After considering both the above steps we obtain drain current expression whose accuracy is similar to that obtained from second-order hyperbolic v -E model. In modified first-order hyperbolic v -E expression if vd and vs is replaced by smoothing functions for the effective drain voltage (vdeff) and effective source voltage (vseff), it will as well take care of discontinuity between linear to saturation regions of operation. The condition of symmetry is shown to be satisfied by drain current and its higher order derivatives, as both of them are odd functions and their even order derivatives smoothly pass through the origin. In strong inversion region and technology node of 22 nm the GST is shown to pass till sixth-order derivative and for weak inversion it is shown till fifth-order derivative. In the expression of drain current major short channel phenomena like vertical field mobility reduction, velocity saturation and velocity overshoot have been taken into consideration.

Evaluation of wick drain performance in Virginia soils.

DOT National Transportation Integrated Search

2003-01-01

Prefabricated vertical drains (PVD), also known as wick drains, are commonly used to accelerate the consolidation of fine-grained soils in order to reduce future settlements and increase shear strength. Various drain designs are currently on the mark...

AN INTERREGIONAL COMPARISON OF CHANNEL STRUCTURE, TRANSIENT STORAGE, AND RIPARIAN COVER WITH COMMUNITY METABOLISM IN STREAMS DRAINING EARLY- AND MID-SUCCESSIONAL WATERSHEDS

EPA Science Inventory

The goal of this research was to evaluate stream ecosystem function in response to different forest harvest intensities and time since harvest. Research was conducted in North Carolina, Arkansas, Oregon, and California.

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

NASA Astrophysics Data System (ADS)

Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

2018-05-01

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

High efficiency FET microwave detector design

NASA Astrophysics Data System (ADS)

Luglio, Juan; Ishii, Thomas Koryu

1990-12-01

The work is based on an assumption that very little microwave power would be consumed at a negatively biased gate of a microwave FET, yet significant detected signals would be obtained at the drain if the bias is given. By analyzing a Taylor-series expansion of the drain-current equation in the vicinity of a fixed gate-bias voltage, the bias voltage is found to maximize the second derivative of the drain current, the gate-bias voltage characteristic curve for the maximum detected drain current under a given fixed drain-bias voltage. Based on these findings, a high-efficiency microwave detector is designed, fabricated, and tested at 8.6 GHz, and it is shown that the audio power over absorbed microwave power ratio of the detector is 135 percent due to the positive gain.

Influences of brain tissue poroelastic constants on intracranial pressure (ICP) during constant-rate infusion.

PubMed

Li, Xiaogai; von Holst, Hans; Kleiven, Svein

2013-01-01

A 3D finite element (FE) model has been developed to study the mean intracranial pressure (ICP) response during constant-rate infusion using linear poroelasticity. Due to the uncertainties in the poroelastic constants for brain tissue, the influence of each of the main parameters on the transient ICP infusion curve was studied. As a prerequisite for transient analysis, steady-state simulations were performed first. The simulated steady-state pressure distribution in the brain tissue for a normal cerebrospinal fluid (CSF) circulation system showed good correlation with experiments from the literature. Furthermore, steady-state ICP closely followed the infusion experiments at different infusion rates. The verified steady-state models then served as a baseline for the subsequent transient models. For transient analysis, the simulated ICP shows a similar tendency to that found in the experiments, however, different values of the poroelastic constants have a significant effect on the infusion curve. The influence of the main poroelastic parameters including the Biot coefficient α, Skempton coefficient B, drained Young's modulus E, Poisson's ratio ν, permeability κ, CSF absorption conductance C(b) and external venous pressure p(b) was studied to investigate the influence on the pressure response. It was found that the value of the specific storage term S(ε) is the dominant factor that influences the infusion curve, and the drained Young's modulus E was identified as the dominant parameter second to S(ε). Based on the simulated infusion curves from the FE model, artificial neural network (ANN) was used to find an optimised parameter set that best fit the experimental curve. The infusion curves from both the FE simulation and using ANN confirmed the limitation of linear poroelasticity in modelling the transient constant-rate infusion.

A two-dimensional transient analytical solution for a ponded ditch drainage system under the influence of source/sink

NASA Astrophysics Data System (ADS)

Sarmah, Ratan; Tiwari, Shubham

2018-03-01

An analytical solution is developed for predicting two-dimensional transient seepage into ditch drainage network receiving water from a non-uniform steady ponding field from the surface of the soil under the influence of source/sink in the flow domain. The flow domain is assumed to be saturated, homogeneous and anisotropic in nature and have finite extends in horizontal and vertical directions. The drains are assumed to be standing vertical and penetrating up to impervious layer. The water levels in the drains are unequal and invariant with time. The flow field is also assumed to be under the continuous influence of time-space dependent arbitrary source/sink term. The correctness of the proposed model is checked by developing a numerical code and also with the existing analytical solution for the simplified case. The study highlights the significance of source/sink influence in the subsurface flow. With the imposition of the source and sink term in the flow domain, the pathline and travel time of water particles started deviating from their original position and above that the side and top discharge to the drains were also observed to have a strong influence of the source/sink terms. The travel time and pathline of water particles are also observed to have a dependency on the height of water in the ditches and on the location of source/sink activation area.

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Chen, Jian-Liang; Chen, Chien-Ming; Chen, Chii-Wen; Cheng, Ching-Hwa; Chiu, Hsien-Chin

2017-11-01

In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application. The new SGORSD structure could obtain a low electric field at channel near the drain side owing to a step GOLDD design. Compared to the conventional device, the SGORSD TFT exhibits a better kink effect and higher breakdown performance due to the reduced drain electric field (D-EF). In addition, the leakage current also can be suppressed. Moreover, the device stability, such as the threshold voltage shift and drain current degradation under a high gate bias, is improved by the design of SGORSD structure. Therefore, this novel step GOLDD structure can be a promising design to be used in active-matrix flat panel electronics.

Transient simulation of molten salt central receiver

NASA Astrophysics Data System (ADS)

Doupis, Dimitri; Wang, Chuan; Carcorze-Soto, Jorge; Chen, Yen-Ming; Maggi, Andrea; Losito, Matteo; Clark, Michael

2016-05-01

Alstom is developing concentrated solar power (CSP) utilizing 60/40wt% NaNO3-KNO3 molten salt as the working fluid in a tower receiver for the global renewable energy market. In the CSP power generation cycle, receivers undergo a daily cyclic operation due to the transient nature of solar energy. Development of robust and efficient start-up and shut-down procedures is critical to avoiding component failures due to mechanical fatigue resulting from thermal transients, thus maintaining the performance and availability of the CSP plant. The Molten Salt Central Receiver (MSCR) is subject to thermal transients during normal daily operation, a cycle that includes warmup, filling, operation, draining, and shutdown. This paper describes a study to leverage dynamic simulation and finite element analysis (FEA) in development of start-up, shutdown, and transient operation concepts for the MSCR. The results of the FEA also verify the robustness of the MSCR design to the thermal transients anticipated during the operation of the plant.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

NASA Astrophysics Data System (ADS)

Garg, Shelly; Saurabh, Sneh

2018-01-01

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration.

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

PubMed

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Transient effects of sudden changes of heat load in a naturally ventilated room

NASA Astrophysics Data System (ADS)

Caulfield, C. P.; Bower, D. J.; Fitzgerald, S.; Woods, A. W.

2006-11-01

Using reduced numerical models and small-scale laboratory experiments, we investigate the transient effects of changing isolated heat loads discontinuously within a large, ventilated space. We consider the emptying filling box (with high and low openings) driven by a single isolated source of buoyancy. The original steady state consists of a buoyant layer, whose depth (for the simplest case of a point source plume) is determined by the geometric properties of the room alone. When the buoyancy flux of the source is increased, a new layer `fills' the room from the top with a more buoyant layer. The original layer disappears due to entrainment by the rising plume. The behaviour is qualitatively different when the source buoyancy flux is decreased. In this case, the rising plume fluid is now relatively dense, and so it inevitably collapses back to `intrude' below the original layer. In this case, the original layer disappears due to both draining through the upper opening, and penetrative entrainment by the dense plume. We compare the predictions of three numerical models using different penetrative entrainment parametrizations to a sequence of laboratory experiments. This entrainment reduces the density of the intruding layer, and so the rising plume eventually stalls, and no longer reaches the (draining) original layer. We demonstrate that it is necessary to consider the transient effects of penetrative entrainment when the reduction in source buoyancy flux is sufficiently small.

Modeling of Metal-Ferroelectric-Semiconductor Field Effect Transistors

NASA Technical Reports Server (NTRS)

Duen Ho, Fat; Macleod, Todd C.

1998-01-01

The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

NASA Astrophysics Data System (ADS)

Yu, Fei; Ma, Xiaoyu; Deng, Wanling; Liou, Juin J.; Huang, Junkai

2017-11-01

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

An analytical drain current model for symmetric double-gate MOSFETs

NASA Astrophysics Data System (ADS)

Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

2018-04-01

An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

Method and system for reducing device performance degradation of organic devices

DOEpatents

Teague, Lucile C.

2014-09-02

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

40 CFR 86.1430 - Certification Short Test sequence; general requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... test procedure. Fuel tank drain and fill is performed or a transient test procedure is performed, as... sets of test conditions identified in this subpart are based on the test fuel type present in the vehicle fuel tank and the ambient temperature during the test. Tables O-96-1 and O-96-2 outline the...

40 CFR 86.1430 - Certification Short Test sequence; general requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... test procedure. Fuel tank drain and fill is performed or a transient test procedure is performed, as... sets of test conditions identified in this subpart are based on the test fuel type present in the vehicle fuel tank and the ambient temperature during the test. Tables O-96-1 and O-96-2 outline the...

40 CFR 86.1430 - Certification Short Test sequence; general requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... test procedure. Fuel tank drain and fill is performed or a transient test procedure is performed, as... sets of test conditions identified in this subpart are based on the test fuel type present in the vehicle fuel tank and the ambient temperature during the test. Tables O-96-1 and O-96-2 outline the...

40 CFR 86.1430 - Certification Short Test sequence; general requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... test procedure. Fuel tank drain and fill is performed or a transient test procedure is performed, as... sets of test conditions identified in this subpart are based on the test fuel type present in the vehicle fuel tank and the ambient temperature during the test. Tables O-96-1 and O-96-2 outline the...

Dual drain MOSFET detector for crosstie memory systems

NASA Astrophysics Data System (ADS)

Bluzer, N.

1985-03-01

This patent application, which discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagi, Mamiko; Ito, Mitsuki; Shirakashi, Jun-ichi, E-mail: shrakash@cc.tuat.ac.jp

We report a new method for fabrication of Ni nanogaps based on electromigration induced by a field emission current. This method is called “activation” and is demonstrated here using a current source with alternately reversing polarities. The activation procedure with alternating current bias, in which the current source polarity alternates between positive and negative bias conditions, is performed with planar Ni nanogaps defined on SiO{sub 2}/Si substrates at room temperature. During negative biasing, a Fowler-Nordheim field emission current flows from the source (cathode) to the drain (anode) electrode. The Ni atoms at the tip of the drain electrode are thusmore » activated and then migrate across the gap from the drain to the source electrode. In contrast, in the positive bias case, the field emission current moves the activated atoms from the source to the drain electrode. These two procedures are repeated until the tunnel resistance of the nanogaps is successively reduced from 100 TΩ to 48 kΩ. Scanning electron microscopy and atomic force microscopy studies showed that the gap separation narrowed from approximately 95 nm to less than 10 nm because of the Ni atoms that accumulated at the tips of both the source and drain electrodes. These results show that the alternately biased activation process, which is a newly proposed atom transfer technique, can successfully control the tunnel resistance of the Ni nanogaps and is a suitable method for formation of ultrasmall nanogap structures.« less

Influence of landscape position and transient water table on soil development and carbon distribution in a steep, headwater catchment

Treesearch

Scott W. Bailey; Patricia A. Brousseau; Kevin J. McGuire; Donald S. Ross

2014-01-01

Upland headwater catchments, such as those in the AppalachianMountain region, are typified by coarse textured soils, flashy hydrologic response, and low baseflow of streams, suggesting well drained soils and minimal groundwater storage. Model formulations of soil genesis, nutrient cycling, critical loads and rainfall/runoff response are typically based on vertical...

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

NASA Astrophysics Data System (ADS)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Razavi, S. M.; Ebrahim Hosseini, Seyed; Amini Moghadam, Hamid

2011-11-01

In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We investigate the device performance focusing on breakdown voltage, threshold voltage, drain current and dc output conductance with two-dimensional and two-carrier device simulation. Our simulation results demonstrate that the channel thickness under the gate in the drain side is an important factor in the breakdown voltage. Also, the positive shift in the threshold voltage for the DS-DRG structure is larger in comparison with that for the source side-double recessed gate (SS-DRG) SiC MESFET. The saturated drain current for the DS-DRG structure is larger compared to that for the SS-DRG structure. The maximum dc output conductance in the DS-DRG structure is smaller than that in the SS-DRG structure.

Accounting for the risks of phosphorus losses through tile drains in a phosphorus index.

PubMed

Reid, D Keith; Ball, Bonnie; Zhang, T Q

2012-01-01

Tile drainage systems have been identified as a significant conduit for phosphorus (P) losses to surface water, but P indices do not currently account for this transport pathway in a meaningful way. Several P indices mention tile drains, but most account for either the reduction in surface runoff or the enhanced transport through tiles rather than both simultaneously. A summary of the current state of how tile drains are accounted for within P indices is provided, and the challenges in predicting the risk of P losses through tile drains that are relative to actual losses are discussed. A framework for a component P Index is described, along with a proposal to incorporate predictions of losses through tile drains as a component within this framework. Options for calibrating and testing this component are discussed. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Drain site evisceration of fallopian tube, another reason to discourage abdominal drain: report of a case and brief review of literature.

PubMed

Saini, Pradeep; Faridi, M S; Agarwal, Nitin; Gupta, Arun; Kaur, Navneet

2012-04-01

Placement of a drain following abdominal surgery is common despite a lack of convincing evidence in the current literature to support this practice. The use of intra-abdominal drain is associated with many potential and serious complications. We report a drain site evisceration of the right fallopian tube after the removal of an intra-abdominal drain. The drain was placed in the right iliac fossa in a patient who underwent a lower segment Caesarean section (LSCS) for meconium liquor with fetal distress. The Pfannenstiel incision made for LSCS was reopened and the protruding inflamed fimbrial end of the right fallopian tube was excised. The patient made an uneventful recovery. Routine intra-abdominal prophylactic drain following an abdominal surgery including LSCS should be discouraged.

Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.

PubMed

Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young

2005-04-15

A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

NASA Astrophysics Data System (ADS)

kumar, Sandeep; Pratiyush, Anamika Singh; Dolmanan, Surani B.; Tripathy, Sudhiranjan; Muralidharan, Rangarajan; Nath, Digbijoy N.

2017-12-01

We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector with a photo-to-dark current ratio of >107. The Ti/Al/Ni/Au metal stack was evaporated and thermal annealed rapidly for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface, while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. A spectral responsivity (SR) of 32.9 A/W at 367 nm was measured at 5 V. A very high photo-to-dark current ratio of >107 was measured at a bias of 20 V. The photo-to-dark current ratio at a fixed bias was found to be decreasing with an increase in the recess length of photodetectors. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current of < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated, and carrier lifetimes were estimated which matched well with those reported elsewhere.

Modifications to the Fission Surface Power Primary Test Circuit (FSP-PTC)

NASA Technical Reports Server (NTRS)

Garber, Anne E.

2008-01-01

An actively pumped alkali metal flow circuit, designed and fabricated at the NASA Marshall Space Flight Center, underwent a range of tests at MSFC in early 2007. During this period, system transient responses and the performance of the liquid metal pump were evaluated. In May of 2007, the circuit was drained and cleaned to prepare for multiple modifications: the addition of larger upper and lower reservoirs, the installation of an annular linear induction pump (ALIP), and the inclusion of a closeable orifice in the test section. Modifications are now complete and testing has resumed. Performance of the ALIp, provided by Idaho National Laboratory (INL), is the subject of the first round ofexperimentation. This paper provides a summary of the tests conducted on the original circuit, details the physical changes that have since been made to it, and describes the current test program.

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

NASA Astrophysics Data System (ADS)

Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

2018-06-01

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw

2014-10-21

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of themore » surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.« less

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

NASA Astrophysics Data System (ADS)

Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo

2017-02-01

Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (V th) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the V th slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

An analytical solution for predicting the transient seepage from a subsurface drainage system

NASA Astrophysics Data System (ADS)

Xin, Pei; Dan, Han-Cheng; Zhou, Tingzhang; Lu, Chunhui; Kong, Jun; Li, Ling

2016-05-01

Subsurface drainage systems have been widely used to deal with soil salinization and waterlogging problems around the world. In this paper, a mathematical model was introduced to quantify the transient behavior of the groundwater table and the seepage from a subsurface drainage system. Based on the assumption of a hydrostatic pressure distribution, the model considered the pore-water flow in both the phreatic and vadose soil zones. An approximate analytical solution for the model was derived to quantify the drainage of soils which were initially water-saturated. The analytical solution was validated against laboratory experiments and a 2-D Richards equation-based model, and found to predict well the transient water seepage from the subsurface drainage system. A saturated flow-based model was also tested and found to over-predict the time required for drainage and the total water seepage by nearly one order of magnitude, in comparison with the experimental results and the present analytical solution. During drainage, a vadose zone with a significant water storage capacity developed above the phreatic surface. A considerable amount of water still remained in the vadose zone at the steady state with the water table situated at the drain bottom. Sensitivity analyses demonstrated that effects of the vadose zone were intensified with an increased thickness of capillary fringe, capillary rise and/or burying depth of drains, in terms of the required drainage time and total water seepage. The analytical solution provides guidance for assessing the capillary effects on the effectiveness and efficiency of subsurface drainage systems for combating soil salinization and waterlogging problems.

Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2018-05-01

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 ? 10 ? cm ?) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f ?), gain bandwidth product (GBW), and gate-to-drain capacitance (C ?) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.

Current practice patterns of drain usage amongst UK and Irish surgeons performing bilateral breast reductions: Evidence down the drain.

PubMed

Sugrue, Conor M; McInerney, Niall; Joyce, Cormac W; Jones, Deidre; Hussey, Alan J; Kelly, Jack L; Kerin, Michael J; Regan, Padraic J

2015-01-01

Bilateral breast reduction (BBR) is one of the most frequently performed female breast operations. Despite no evidence supporting efficacy of drain usage in BBRs, postoperative insertion is common. Recent high quality evidence demonstrating potential harm from drain use has subsequently challenged this traditional practice. The aim of this study is to assess the current practice patterns of drains usage by Plastic & Reconstructive and Breast Surgeons in UK and Ireland performing BBRs. An 18 question survey was created evaluating various aspects of BBR practice. UK and Irish Plastic & Reconstructive and Breast Surgeons were invited to participate by an email containing a link to a web-based survey. Statistical analysis was performed with student t-test and chi-square test. Two hundred and eleven responding surgeons were analysed, including 80.1% (171/211) Plastic Surgeons and 18.9% (40/211) Breast Surgeons. Of the responding surgeons, 71.6% (151/211) routinely inserted postoperative drains, for a mean of 1.32 days. Drains were used significantly less by surgeons performing ≥20 BBRs (p = 0.02). With the majority of BBRs performed as an inpatient procedure, there was a trend towards less drain usage in surgeons performing this procedure as an outpatient; however, this was not statistically significant (p = 0.07). Even with the high level of evidence demonstrating the safety of BBR without drains, they are still routinely utilised. In an era of evidence- based medicine, surgeons performing breast reductions must adopt the results from scientific research into their clinical practice.

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

NASA Astrophysics Data System (ADS)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Dong-Suk; Kang, Yu-Jin; Park, Jae-Hyung

Highlights: • We developed and investigated source/drain electrodes in oxide TFTs. • The Mo S/D electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Momore » source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.« less

Performance improvement of doped TFET by using plasma formation concept

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

2018-01-01

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour. The realization of abrupt doping profile is more difficult in the case of physically doped TFETs due to material solubility limit. In this concern, we propose a novel design of TFET. For this, P+ (source)-I (channel)-N (drain) type structure has been considered, wherein a metal electrode is deposited over the source region. In addition to this, a negative voltage is applied to the source electrode (SE). It induces the surface plasma layer of holes in the source region, which is responsible for steepness in the bands at source/channel junction and provides the advantage of higher doping in source region without any addition of the physical impurity. The proposed modification is helpful for achieving steeper band bending at the source/channel interface, which enables higher tunneling generation rate of charge carriers at this interface and overcomes the issue of low ON-state current. Thus, the proposed device shows the increment of 2 decades in drain current and 252 mV reduction in threshold voltage compared with conventional device. The optimization of spacer length (LSG) between source/gate (LSG) and applied negative voltage (Vpg) over source electrode have been performed to obtain optimum drain current and threshold voltage (Vth). Further, for the suppression of ambipolar current, drain region is kept lightly doped, which reduces the ambipolar current up to level of Off state current. Moreover, in the proposed device gate electrode is underlapped for improving RF performance. It also reduces gate to drain capacitances (Cgd) and increases cut-off-frequency (fT), fmax, GBP, TFP. In addition to these, linearity analysis has been performed to validate the applicability of the device.

Simulation of Sub-Drains Performance Using Visual MODFLOW for Slope Water Seepage Problem

NASA Astrophysics Data System (ADS)

Baharuddin, M. F. T.; Tajudin, S. A. A.; Abidin, M. H. Z.; Yusoff, N. A.

2016-07-01

Numerical simulation technique was used for investigating water seepage problem at the Botanic Park Kuala Lumpur. A proposed sub-drains installation in problematic site location was simulated using Modular Three-Dimensional Finite Difference Groundwater Flow (MODFLOW) software. The results of simulation heads during transient condition showed that heads in between 43 m (water seepage occurred at level 2) until 45 m (water seepage occurred at level 4) which heads measurement are referred to mean sea level. However, elevations measurements for level 2 showed the values between 41 to 42 m from mean sea level and elevations for level 4 between 42 to 45 m from mean sea level. These results indicated an increase in heads for level 2 and level 4 between 1 to 2 m when compared to elevations slope at the level 2 and level 4. The head increases surpass the elevation level of the slope area that causing water seepage at level 2 and level 4. In order to overcome this problems, the heads level need to be decrease to 1 until 2 m by using two options of sub-drain dimension size. Sub-drain with the dimension of 0.0750 m (diameter), 0.10 m (length) and using 4.90 m spacing was the best method to use as it was able to decrease the heads to the required levels of 1 to 2 m.

Optimization of limestone drains for long- term treatment of acidic mine drainage, Swatara Creek Basin, Schuylkill County, PA

USGS Publications Warehouse

Cravotta, Charles A.; Ward, S.J.; Koury, Daniel J.; Koch, R.D.

2004-01-01

Limestone drains were constructed in 1995, 1997, and 2000 to treat acidic mine drainage (AMD) from the Orchard, Buck Mtn., and Hegins discharges, respectively, in the Swatara Creek Basin, Southern Anthracite Coalfield, east-central Pennsylvania. This report summarizes the construction characteristics and performance of each of the limestone drains on the basis of influent and effluent quality and laboratory tests of variables affecting limestone dissolution rates. Data for influent and effluent indicate substantial alkalinity production by the Orchard and Buck Mtn. limestone drains and only marginal benefits from the Hegins drain. Nevertheless, the annual alkalinity loading rates have progressively declined with age of all three systems. Collapsible-container (cubitainer) testing was conducted to evaluate current scenarios and possible options for reconstruction and maintenance of the limestone drains to optimize their long-term performance. The cubitainer tests indicated dissolution rates for the current configurations that were in agreement with field flux data (net loading) for alkalinity and dissolved calcium. The dissolution rates in cubitainers were larger for closed conditions than open conditions, but the rates were comparable for coated and uncoated limestone for a given condition. Models developed on the basis of the cubitainer testing indicate (1) exponential declines in limestone mass and corresponding alkalinity loading rates with increased age of limestone drains and (2) potential for improved performance with enlargement, complete burial, and/or regular flushing of the systems.

A new assessment method of pHEMT models by comparing relative errors of drain current and its derivatives up to the third order

NASA Astrophysics Data System (ADS)

Dobeš, Josef; Grábner, Martin; Puričer, Pavel; Vejražka, František; Míchal, Jan; Popp, Jakub

2017-05-01

Nowadays, there exist relatively precise pHEMT models available for computer-aided design, and they are frequently compared to each other. However, such comparisons are mostly based on absolute errors of drain-current equations and their derivatives. In the paper, a novel method is suggested based on relative root-mean-square errors of both drain current and its derivatives up to the third order. Moreover, the relative errors are subsequently relativized to the best model in each category to further clarify obtained accuracies of both drain current and its derivatives. Furthermore, one our older and two newly suggested models are also included in comparison with the traditionally precise Ahmed, TOM-2 and Materka ones. The assessment is performed using measured characteristics of a pHEMT operating up to 110 GHz. Finally, a usability of the proposed models including the higher-order derivatives is illustrated using s-parameters analysis and measurement at more operating points as well as computation and measurement of IP3 points of a low-noise amplifier of a multi-constellation satellite navigation receiver with ATF-54143 pHEMT.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Sung Hun, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu; Shin, Jongmin; Cho, In-Tak

2014-07-07

This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstratemore » physical transience within 30 min.« less

Soft-type trap-induced degradation of MoS2 field effect transistors.

PubMed

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS 2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS 2 FETs.

Current conduction in junction gate field effect transistors. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Kim, C.

1970-01-01

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Soft-type trap-induced degradation of MoS2 field effect transistors

NASA Astrophysics Data System (ADS)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Analysis of source/drain engineered 22nm FDSOI using high-k spacers

NASA Astrophysics Data System (ADS)

Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

While looking at the current classical scaling of devices there are lots of short channel effects come into consideration. In this paper, a novel device structure is proposed that is an improved structure of Modified Source(MS) FDSOI in terms of better electrical performance, on current and reduced off state leakage current with a higher Ion/Ioff ratio that helps in fast switching of low power nano electronic devices. Proposed structure has Modified drain and source regions with two different type to doping profile at 22nm gate length. In the upper part of engineered region (MD and MS) the doping concentration is kept high and less in the lower region. The purpose was to achieve low parasitic capacitance in source and drain region by reducing doping concentration [1].

Restructuring brain drain: strengthening governance and financing for health worker migration.

PubMed

Mackey, Tim K; Liang, Bryan A

2013-01-15

Health worker migration from resource-poor countries to developed countries, also known as ''brain drain'', represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed.

Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

PubMed

Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

2015-01-27

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae

2007-07-01

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.

Two-dimensional analytical model for dual-material control-gate tunnel FETs

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

A Brain-Machine-Brain Interface for Rewiring of Cortical Circuitry after Traumatic Brain Injury

DTIC Science & Technology

2011-09-01

cerebral cortex of a rat’s brain. The flow chart for spike discrimination algorithm is also shown. Negative threshold level (not shown in bottom left...portion of the transistor drain current can flow into its bulk due to impact ionization effect [40], greatly degrading the output impedance of the...current source. This can be solved by connecting the bulk and source of together, as also seen in Fig. 4, allowing its drain-bulk current to also flow

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Advances in chest drain management in thoracic disease

PubMed Central

George, Robert S.

2016-01-01

An adequate chest drainage system aims to drain fluid and air and restore the negative pleural pressure facilitating lung expansion. In thoracic surgery the post-operative use of the conventional underwater seal chest drainage system fulfills these requirements, however they allow great variability amongst practices. In addition they do not offer accurate data and they are often inconvenient to both patients and hospital staff. This article aims to simplify the myths surrounding the management of chest drains following chest surgery, review current experience and explore the advantages of modern digital chest drain systems and address their disease-specific use. PMID:26941971

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Towards evidence-based emergency medicine: best BETs from the Manchester Royal Infirmary. BET 4: does size matter? Chest drains in haemothorax following trauma.

PubMed

2013-11-01

A short-cut review was carried out to establish whether the size of chest drain inserted is important in haemothoraces. Forty-nine papers were found of which four presented the best evidence to answer the clinical question. The author, date and country of publication, patient group studied, study type, relevant outcomes, results and study weaknesses of these best papers are shown in table 4. The clinical bottom line is that while the available evidence suggests that small bore drains may be as effective as large bore drains in resolving traumatic haemothoraces without additional complications, there is insufficient evidence currently available to recommend a change to standard practice (ie, large bore drains).

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Efficiency of lithium pacemaker batteries as a function of discharge rate and iodine:P2VP cathode composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Helgeson, W.D.; Fester, K.E.

1980-01-01

Electrochemical discharge data for Li/I/sub 2/-P2VP pacemaker batteries at various discharge currents show the efficiency of the battery to be a function of discharge current. Depending on the iodine:P2VP cathode composition, the optimum current drain occurs between discharge currents of 100 to 200 /mu/a. As current drain is reduced to pacemaker application drains, 15-25 /mu/a, the efficiency of the Li/I/sub 2/-P2VP battery decreases. The loss in efficiency at pacemaker rates is attributed primarily to self-discharge. The efficiency of Li/I/sub 2/-P2VP batteries is improved by increasing the percent of iodine in the cathode. I/sub 2/:P2VP weight ratios of 10:1, 15:1 andmore » 20:1 have been discharged at various currents and the data indicate that there is significant improvement in efficiency at pacemaker rate in going from 10:1 to 20:1 cathode weight ratio. 2 refs.« less

Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

NASA Astrophysics Data System (ADS)

Rabbaa, S.; Stiens, J.

2012-11-01

Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

Seismic Response of the Greenland Ice-sheet over Several Melt Seasons near Draining Supraglacial Lakes

NASA Astrophysics Data System (ADS)

Carmichael, J. D.; Joughin, I. R.; Behn, M. D.; Das, S. B.; Lizarralde, D.

2012-12-01

We present seismic observations assembled from 3+ years of melt season measurements collected near seasonally-draining supraglacial lakes on the Greenland Ice-sheet (68.7311,-49.5925). On transient time scales (< 1 day), these data include a record of seismic response coincident with at least three documented lake drainage events. During a particular event, drainage is preceded by two hours of impulsive high-energy seismic signals, followed by the onset of continuous broadband signals (2-50Hz) that we interpret as surface-to-bed meltwater transfer. This drainage is followed additional transient icequakes similar in timing and energy to the precursory activity. Over a seasonal time scale (> 1 month), our data records a transition in seismicity between two distinct modes, with one mode characterized by relative quiescence, and the other mode characterized by uniform energy that is observed network-wide as a continuous, repetitive signal. The transition between modes is abrupt (~ 2 hours) and is observed using multiple seismic discriminants. We interpret this rapid transition as reflecting the evolution of the morphology of a basal drainage system as it responds to melt input. This interpretation is tested against additional geophysical observations that include temperature-based melt models, satellite imagery, and GPS measurements. Finally, we outline and advocate a routine for monitoring icesheet seismicity with a focus on distinguishing surface from basal sources.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

NASA Astrophysics Data System (ADS)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits

DTIC Science & Technology

2008-12-01

and negative gate voltages with and without elevated drain voltages for FDC TFTs. Extending techniques used to localize hot electron degradation...in MOSFETs, experiments in our lab have localized the degradation of a-Si:H to the gate dielectric/a-Si:H channel interface [Shringarpure, et al...saturation, increased drain source current measured with the source and drain reversed indicates localization of ΔVth to the gate dielectric/amorphous

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [El Cerrito, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yiying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2008-04-08

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

2010-01-10

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

NASA Astrophysics Data System (ADS)

Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Technical Reports Server (NTRS)

Jones, C. W. (Editor)

1985-01-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Pathology of cloaca anomalies with case correlation.

PubMed

Gupta, Anita; Bischoff, Andrea

2016-04-01

During the fourth week of human embryo development, a transient common channel known as a cloaca is formed from which three cavities with three external orifices arises. Cloaca anomalies occur when there is failure of separation of the rectum, vagina, and urethra channel resulting in a single drain into the perineum. In our previous institutional studies, Runck et al. compared human and mouse cloaca development and found early mis-patterning of the embryonic cloaca deranged hedgehog and bone morphogenetic proteins (BMP) signaling. Also, our group reported the embryological correlation of the epithelial and stromal histology found in step sections of the common channel in 14 cloaca malformations in humans. In this review, we present the pathology of a 4-year-old female with a cloaca and VACTERL complex, and summarize our current knowledge of cloaca pathology. Furthermore, we suggest that careful pathological examination of cloaca specimens in conjunction with surgical orientation may result in a better understanding of the etiology of this condition. Published by Elsevier Inc.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Astrophysics Data System (ADS)

Jones, C. W.

1985-12-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Fukuda, Koichi; Liu, Yongxun; Mori, Takahiro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro; Migita, Shinji; Masahara, Meishoku; Endo, Kazuhiko; Ota, Hiroyuki; Matsukawa, Takashi

2017-04-01

We have demonstrated the operation of a CMOS inverter consisting of Si tunnel FinFETs. Both p- and n-type tunnel FinFETs are successfully fabricated and operated on the same SOI wafer. The current mismatch between p- and n-type tunnel FETs is compensated by tuning the number of fin channels. Very low short-circuit current and clear voltage input-output characteristics are obtained. The thin epitaxial channel in the tunnel FinFETs effectively increases the drain current and accordingly reduces the drain capacitance, which could help high-performance tunnel FET CMOS inverter operation.

[Outpatient Drain Management in Patients with Clinically Relevant Postoperative Pancreatic Fistula (CR-POPF) - Current Status in Germany].

PubMed

Hempel, Sebastian; Püttmann, Pamela; Kahlert, Christoph; Seifert, Lena; Mees, Sören Torge; Welsch, Thilo; Weitz, Jürgen; Distler, Marius

2018-06-01

Postoperative pancreatic fistula (POPF) is a common complication after pancreatic surgery and is associated with extended hospitalisation, increased medical costs, and reduced quality of life. The aim of the present study was to assess the treatment of POPF in Germany, with a special focus on outpatient drain management in patients with clinically relevant POPF (CR-POPF). A questionnaire evaluating postoperative management once a CR-POPF is diagnosed - especially focusing on ambulatory drain management - was developed and sent to 211 German hospitals performing > 12 pancreatic operations per year. Statistical analysis was carried out using SPSS 21. The final response rate was 62% (n = 131). Outpatient drainage management is performed by most of the responding hospitals (n = 100, 76.3%). However, 30% of hospitals (n = 40) perform outpatient treatment only in 5% of their cases with clinically relevant POPF. There was no correlation between case load of the pancreatic centres and frequency of outpatient drain management. In general, discharge criteria for patients with drained POPF (n = 98, 74.8%), the drain management itself (n = 95, 72.5%) and criteria for drain removal (n = 74, 56.5%) are not standardised but made individually. In centres with standardised drain management criteria for drain removal, these criteria were drain volume < 20 ml (29.8%), no fluid collection (25.2%), no elevation of drain amylase/lipase (25.2%) and no specific symptoms (22.1%). This is the first survey in Germany evaluating outpatient drain management in patients with CR-POPF. Although the data in the literature are rare, the majority of German pancreatic surgeons perform outpatient drain management. However, discharge criteria, outpatient care and drain removal are standardised in only the minority of centres. Therefore, we recommend the evaluation of discharge criteria and a management algorithm for patients with drained CR-POPF to improve the perioperative course. Georg Thieme Verlag KG Stuttgart · New York.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

NASA Astrophysics Data System (ADS)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

Charge-Dissipative Electrical Cables

NASA Technical Reports Server (NTRS)

Kolasinski, John R.; Wollack, Edward J.

2004-01-01

Electrical cables that dissipate spurious static electric charges, in addition to performing their main functions of conducting signals, have been developed. These cables are intended for use in trapped-ion or ionizing-radiation environments, in which electric charges tend to accumulate within, and on the surfaces of, dielectric layers of cables. If the charging rate exceeds the dissipation rate, charges can accumulate in excessive amounts, giving rise to high-current discharges that can damage electronic circuitry and/or systems connected to it. The basic idea of design and operation of charge-dissipative electrical cables is to drain spurious charges to ground by use of lossy (slightly electrically conductive) dielectric layers, possibly in conjunction with drain wires and/or drain shields (see figure). In typical cases, the drain wires and/or drain shields could be electrically grounded via the connector assemblies at the ends of the cables, in any of the conventional techniques for grounding signal conductors and signal shields. In some cases, signal shields could double as drain shields.

Transient sodium current at subthreshold voltages: activation by EPSP waveforms

PubMed Central

Carter, Brett C.; Giessel, Andrew J.; Sabatini, Bernardo L.; Bean, Bruce P.

2012-01-01

Summary Tetrodotoxin (TTX)-sensitive sodium channels carry large transient currents during action potentials and also “persistent” sodium current, a non-inactivating TTX-sensitive current present at subthreshold voltages. We examined gating of subthreshold sodium current in dissociated cerebellar Purkinje neurons and hippocampal CA1 neurons, studied at 37 °C with near-physiological ionic conditions. Unexpectedly, in both cell types small voltage steps at subthreshold voltages activated a substantial component of transient sodium current as well as persistent current. Subthreshold EPSP-like waveforms also activated a large component of transient sodium current, but IPSP-like waveforms engaged primarily persistent sodium current with only a small additional transient component. Activation of transient as well as persistent sodium current at subthreshold voltages produces amplification of EPSPs that is sensitive to the rate of depolarization and can help account for the dependence of spike threshold on depolarization rate, as previously observed in vivo. PMID:22998875

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

NASA Astrophysics Data System (ADS)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

GIDL analysis of the process variation effect in gate-all-around nanowire FET

NASA Astrophysics Data System (ADS)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

A novel method for electronic measurement and recording of surgical drain output.

PubMed

van Duren, Bernard Hendrik; van Boxel, Gijsbert Isaac

2017-04-01

Surgical drains are used to collect and measure fluids (e.g. serous fluid, lymph, blood, etc.). The volume of fluid in the container is measured using graded markings on the container and then recorded manually on a "drain chart" allowing for manual rate calculations. This method is dependant on regularly checking the volume of the drain and recording the value accurately; unfortunately, this is often not feasible due to staffing levels and time constraints. This results in inaccurate "drain charts" making clinical decisions based on these figures unreliable. Often the lack of confidence in these measurements leads to delayed drain removal with consequent increased infection risks and potential delayed discharge. Accurate digital measurement of drain content would have a significant impact on clinical care. This paper describes a digital technology to measure volume, making use of a positive terminal at the lowest point of the vessel and negative (sensor) terminals placed at accurate intervals along an axis of the vessel. A proof-of-concept prototype was developed using commercially available electronic components to test the feasibility of a technology for electronic measurement and recording of surgical drain content. In a simulated environment, the proposed technology was shown to be effective and accurate. The proposed electronic drain has a number of advantages over currently used devices in saving time and easing pressure on nursing staff, reduce disturbance of patients, and allows for preset alarms.

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

Structural Modification of Organic Thin-Film Transistors for Photosensor Application

NASA Astrophysics Data System (ADS)

Jeong, Hyeon Seok; Bae, Jin-Hyuk; Lee, Hyeonju; Ndikumana, Joel; Park, Jaehoon

2018-05-01

We investigated the light response characteristics of bottom-gate/top-contact organic TFTs fabricated using pentacene and polystyrene as an organic semiconductor and a polymeric insulator, respectively. The pentacene TFT with overlaps (50 μm) between the source and gate electrodes as well as between the drain and gate electrodes exhibited negligible hysteresis in its transfer characteristics upon reversal of the gate voltage sweep direction. When the TFTs were structurally modified to produce an underlap structure between the source and gate electrodes, clockwise hysteresis and a drain-current decrease were observed, which were further augmented by increasing the gate underlap (from 30 μm to 50 μm and 70 μm). Herein, these results are explained in terms of space charge formation and accumulation capacitance reduction. Importantly, we found that space charges formed under the source electrode contributed to the drain currents via light irradiation through the underlap region. Under constant bias conditions, the TFTs with gate underlap structures thus exhibited on-state drain current changes in response to light signals. In our study, an optimal photosensitivity exceeding 11 was achieved by the TFT with a 30 μm gate underlap. Consequently, we suggest that gate underlap structure modification is a viable means of implementing light responsiveness in organic TFTs.

Death Valley regional ground-water flow system, Nevada and California -- hydrogeologic framework and transient ground-water flow model

USGS Publications Warehouse

Belcher, Wayne R.

2004-01-01

A numerical three-dimensional (3D) transient ground-water flow model of the Death Valley region was developed by the U.S. Geological Survey for the U.S. Department of Energy programs at the Nevada Test Site and at Yucca Mountain, Nevada. Decades of study of aspects of the ground-water flow system and previous less extensive ground-water flow models were incorporated and reevaluated together with new data to provide greater detail for the complex, digital model. A 3D digital hydrogeologic framework model (HFM) was developed from digital elevation models, geologic maps, borehole information, geologic and hydrogeologic cross sections, and other 3D models to represent the geometry of the hydrogeologic units (HGUs). Structural features, such as faults and fractures, that affect ground-water flow also were added. The HFM represents Precambrian and Paleozoic crystalline and sedimentary rocks, Mesozoic sedimentary rocks, Mesozoic to Cenozoic intrusive rocks, Cenozoic volcanic tuffs and lavas, and late Cenozoic sedimentary deposits of the Death Valley Regional Ground-Water Flow System (DVRFS) region in 27 HGUs. Information from a series of investigations was compiled to conceptualize and quantify hydrologic components of the ground-water flow system within the DVRFS model domain and to provide hydraulic-property and head-observation data used in the calibration of the transient-flow model. These studies reevaluated natural ground-water discharge occurring through evapotranspiration and spring flow; the history of ground-water pumping from 1913 through 1998; ground-water recharge simulated as net infiltration; model boundary inflows and outflows based on regional hydraulic gradients and water budgets of surrounding areas; hydraulic conductivity and its relation to depth; and water levels appropriate for regional simulation of prepumped and pumped conditions within the DVRFS model domain. Simulation results appropriate for the regional extent and scale of the model were provided by acquiring additional data, by reevaluating existing data using current technology and concepts, and by refining earlier interpretations to reflect the current understanding of the regional ground-water flow system. Ground-water flow in the Death Valley region is composed of several interconnected, complex ground-water flow systems. Ground-water flow occurs in three subregions in relatively shallow and localized flow paths that are superimposed on deeper, regional flow paths. Regional ground-water flow is predominantly through a thick Paleozoic carbonate rock sequence affected by complex geologic structures from regional faulting and fracturing that can enhance or impede flow. Spring flow and evapotranspiration (ET) are the dominant natural ground-water discharge processes. Ground water also is withdrawn for agricultural, commercial, and domestic uses. Ground-water flow in the DVRFS was simulated using MODFLOW-2000, a 3D finite-difference modular ground-water flow modeling code that incorporates a nonlinear least-squares regression technique to estimate aquifer parameters. The DVRFS model has 16 layers of defined thickness, a finite-difference grid consisting of 194 rows and 160 columns, and uniform cells 1,500 m on each side. Prepumping conditions (before 1913) were used as the initial conditions for the transient-state calibration. The model uses annual stress periods with discrete recharge and discharge components. Recharge occurs mostly from infiltration of precipitation and runoff on high mountain ranges and from a small amount of underflow from adjacent basins. Discharge occurs primarily through ET and spring discharge (both simulated as drains) and water withdrawal by pumping and, to a lesser amount, by underflow to adjacent basins, also simulated by drains. All parameter values estimated by the regression are reasonable and within the range of expected values. The simulated hydraulic heads of the final calibrated transient model gener

Properties of the calcium-activated chloride current in heart.

PubMed

Zygmunt, A C; Gibbons, W R

1992-03-01

We used the whole cell patch clamp technique to study transient outward currents of single rabbit atrial cells. A large transient current, IA, was blocked by 4-aminopyridine (4AP) and/or by depolarized holding potentials. After block of IA, a smaller transient current remained. It was completely blocked by nisoldipine, cadmium, ryanodine, or caffeine, which indicates that all of the 4AP-resistant current is activated by the calcium transient that causes contraction. Neither calcium-activated potassium current nor calcium-activated nonspecific cation current appeared to contribute to the 4AP-resistant transient current. The transient current disappeared when ECl was made equal to the pulse potential; it was present in potassium-free internal and external solutions. It was blocked by the anion transport blockers SITS and DIDS, and the reversal potential of instantaneous current-voltage relations varied with extracellular chloride as predicted for a chloride-selective conductance. We concluded that the 4AP-resistant transient outward current of atrial cells is produced by a calcium-activated chloride current like the current ICl(Ca) of ventricular cells (1991. Circulation Research. 68:424-437). ICl(Ca) in atrial cells demonstrated outward rectification, even when intracellular chloride concentration was higher than extracellular. When ICa was inactivated or allowed to recover from inactivation, amplitudes of ICl(Ca) and ICa were closely correlated. The results were consistent with the view that ICl(Ca) does not undergo independent inactivation. Tentatively, we propose that ICl(Ca) is transient because it is activated by an intracellular calcium transient. Lowering extracellular sodium increased the peak outward transient current. The current was insensitive to the choice of sodium substitute. Because a recently identified time-independent, adrenergically activated chloride current in heart is reduced in low sodium, these data suggest that the two chloride currents are produced by different populations of channels.

H-terminated diamond field effect transistor with ferroelectric gate insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karaya, Ryota; Furuichi, Hiroki; Nakajima, Takashi

2016-06-13

An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory windowmore » width was 19 V, when the gate voltage was swept from 20 to −20 V. The maximum on/off current ratio and the linear mobility were 10{sup 8} and 398 cm{sup 2}/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 10{sup 3} without applying a DC gate voltage.« less

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Mehandru, R.; Kim, S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2004-06-01

Pt contacted AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectrics show reversible changes in drain-source current upon exposure to H2-containing ambients, even at room temperature. The changes in current (as high as 3 mA for relatively low gate voltage and drain-source voltage) are approximately an order of magnitude larger than for Pt/GaN Schottky diodes and a factor of 5 larger than Sc2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) diodes exposed under the same conditions. This shows the advantage of using a transistor structure in which the gain produces larger current changes upon exposure to hydrogen-containing ambients. The increase in current is the result of a decrease in effective barrier height of the MOS gate of 30-50 mV at 25 °C for 10% H2/90% N2 ambients relative to pure N2 and is due to catalytic dissociation of the H2 on the Pt contact, followed by diffusion to the Sc2O3/AlGaN interface.

Restructuring brain drain: strengthening governance and financing for health worker migration

PubMed Central

Mackey, Tim K.; Liang, Bryan A.

2013-01-01

Background Health worker migration from resource-poor countries to developed countries, also known as ‘‘brain drain’’, represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Methods Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Results Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. Conclusions In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed. PMID:23336617

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

NASA Astrophysics Data System (ADS)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Simulation of ground-water flow near the nuclear-fuel reprocessing facility at the Western New York Nuclear Service Center, Cattaraugus County, New York

USGS Publications Warehouse

Yager, R.M.

1987-01-01

A two-dimensional finite-difference model was developed to simulate groundwater flow in a surficial sand and gravel deposit underlying the nuclear fuel reprocessing facility at Western New York Nuclear Service Center near West Valley, N.Y. The sand and gravel deposit overlies a till plateau that abuts an upland area of siltstone and shale on its west side, and is bounded on the other three sides by deeply incised stream channels that drain to Buttermilk Creek, a tributary to Cattaraugus Creek. Radioactive materials are stored within the reprocessing plant and are also buried within a till deposit at the facility. Tritiated water is stored in a lagoon system near the plant and released under permit to Franks Creek, a tributary to Buttermilk Creek. Groundwater levels predicted by steady-state simulations closely matched those measured in 23 observation wells, with an average error of 0.5 meter. Simulated groundwater discharges to two stream channels and a subsurface drain were within 5% of recorded values. Steady-state simulations used an average annual recharge rate of 46 cm/yr; predicted evapotranspiration loss from the ground was 20 cm/yr. The lateral range in hydraulic conductivity obtained through model calibration was 0.6 to 10 m/day. Model simulations indicated that 33% of the groundwater discharged from the sand and gravel unit (2.6 L/sec) is lost by evapotranspiration, 3% (3.0 L/sec) flows to seepage faces at the periphery of the plateau, 20% (1.6 L/sec) discharges to stream channels that drain a large wetland area near the center of the plateau, and the remaining 8% (0.6 L/sec) discharges to a subsurface french drain and to a wastewater treatment system. Groundwater levels computed by a transient-state simulation of an annual climatic cycle, including seasonal variation in recharge and evapotranspiration, closely matched water levels measured in eight observation wells. The model predicted that the subsurface drain and the stream channel that drains the wetland would intercept most of the recharge originating near the reprocessing plant. (Lantz-PTT)

Longitudinal Stream Profile Morphology and Patterns of Knickpoint Propagation in the Bighorn Range

NASA Astrophysics Data System (ADS)

Safran, E. B.; Anderson, R. S.; Riihimaki, C. A.; Armstrong, J.

2005-12-01

The northern U. S. Rocky Mountains and the adjacent sedimentary basins are in a transient state of response to regional, Late Cenozoic exhumation. Assembling the history of landscape change there requires interpreting the morphology and genesis of transient landforms such as knickpoints in longitudinal stream profiles. We used concavity and normalized channel steepness indices to quantify the longitudinal profile morphology of >75 streams draining the east side of the Bighorn Range and the adjacent Powder River Basin. Our analyses show that individual units in the range-margin sedimentary cover rock exert a strong influence on longitudinal profile morphology. In the Tongue River and Crazy Woman Creek drainages, more than 50% of the streams examined had knickpoints localized within a resistant, siliceous dolomite. Knickpoints on most streams with drainage areas greater than ~100 km2 at the range front have migrated headward into the gneissic and plutonic core of the range. In the Clear Creek drainage, where the lateral extent of sedimentary cover rock is more restricted than in the adjacent drainages, knickpoints do not align with any particular unit. River profiles in the Powder River Basin beyond 10-20 km from the range front exhibit concavities of ~0.3-0.6 and normalized channel steepness indices of 40-60 (using 0.45 as a reference concavity). All profiles analyzed that extend into the mountain range exhibit at least one reach with exceptionally high (>2) concavity and relatively high (100-600) normalized channel steepness index, highlighting zones of transient adjustment to local base-level drop in the basin. Headwater reaches of range-draining streams exhibit variable but moderate values of concavity (0.15-0.9) and normalized channel steepness index (20-100). The varied morphology of these reaches reflects their passage across a relict surface of low relief but also the effects of glaciation and/or the signature of the narrow summit spine that caps the range.

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.

Improving Current Balance In Parallel MOSFET's

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

NASA Astrophysics Data System (ADS)

Mativenga, Mallory; Kang, Dong Han; Lee, Ung Gi; Jang, Jin

2012-09-01

Bias instability of top-gate amorphous-indium-gallium-zinc-oxide thin-film transistors with source- and drain-offsets is reported. Positive and negative gate bias-stress (VG_STRESS) respectively induce reversible negative threshold-voltage shift (ΔVTH) and reduction in on-current. Migration of positive charges towards the offsets lowers the local resistance of the offsets, resulting in the abnormal negative ΔVTH under positive VG_STRESS. The reduction in on-current under negative VG_STRESS is due to increase in resistance of the offsets when positive charges migrate away from the offsets. Appropriate drain and source bias-stresses applied simultaneously with VG_STRESS either suppress or enhance the instability, verifying lateral ion migration to be the instability mechanism.

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

NASA Astrophysics Data System (ADS)

Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

Computational investigations and grid refinement study of 3D transient flow in a cylindrical tank using OpenFOAM

NASA Astrophysics Data System (ADS)

Mohd Sakri, F.; Mat Ali, M. S.; Sheikh Salim, S. A. Z.

2016-10-01

The study of physic fluid for a liquid draining inside a tank is easily accessible using numerical simulation. However, numerical simulation is expensive when the liquid draining involves the multi-phase problem. Since an accurate numerical simulation can be obtained if a proper method for error estimation is accomplished, this paper provides systematic assessment of error estimation due to grid convergence error using OpenFOAM. OpenFOAM is an open source CFD-toolbox and it is well-known among the researchers and institutions because of its free applications and ready to use. In this study, three types of grid resolution are used: coarse, medium and fine grids. Grid Convergence Index (GCI) is applied to estimate the error due to the grid sensitivity. A monotonic convergence condition is obtained in this study that shows the grid convergence error has been progressively reduced. The fine grid has the GCI value below 1%. The extrapolated value from Richardson Extrapolation is in the range of the GCI obtained.

Source term evaluation for accident transients in the experimental fusion facility ITER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Virot, F.; Barrachin, M.; Cousin, F.

2015-03-15

We have studied the transport and chemical speciation of radio-toxic and toxic species for an event of water ingress in the vacuum vessel of experimental fusion facility ITER with the ASTEC code. In particular our evaluation takes into account an assessed thermodynamic data for the beryllium gaseous species. This study shows that deposited beryllium dusts of atomic Be and Be(OH){sub 2} are formed. It also shows that Be(OT){sub 2} could exist in some conditions in the drain tank. (authors)

Development of a ninety string solar array simulator

NASA Technical Reports Server (NTRS)

Vasek, Thomas E.; Birchenough, Arthur G.

1991-01-01

A power source was developed to support testing for the Space Station Freedom Power Management and Distribution (PMAD) DC Testbed. The intent was to simulate as closely as possible the steady-state and transient responses of a solar array. Several breadboards and one thermal prototype were built and tested. Responses were successfully verified and improved upon during successive breadboards. The completed 90-string simulator consists of four power MOSFETs, four 25 watt source resistors, and four 250 watt drain source bypass resistors per string, in addition to the control circuitry.

Salt-water-freshwater transient upconing - An implicit boundary-element solution

USGS Publications Warehouse

Kemblowski, M.

1985-01-01

The boundary-element method is used to solve the set of partial differential equations describing the flow of salt water and fresh water separated by a sharp interface in the vertical plane. In order to improve the accuracy and stability of the numerical solution, a new implicit scheme was developed for calculating the motion of the interface. The performance of this scheme was tested by means of numerical simulation. The numerical results are compared to experimental results for a salt-water upconing under a drain problem. ?? 1985.

Effects of pond draining on biodiversity and water quality of farm ponds.

PubMed

Usio, Nisikawa; Imada, Miho; Nakagawa, Megumi; Akasaka, Munemitsu; Takamura, Noriko

2013-12-01

Farm ponds have high conservation value because they contribute significantly to regional biodiversity and ecosystem services. In Japan pond draining is a traditional management method that is widely believed to improve water quality and eradicate invasive fish. In addition, fishing by means of pond draining has significant cultural value for local people, serving as a social event. However, there is a widespread belief that pond draining reduces freshwater biodiversity through the extirpation of aquatic animals, but scientific evaluation of the effectiveness of pond draining is lacking. We conducted a large-scale field study to evaluate the effects of pond draining on invasive animal control, water quality, and aquatic biodiversity relative to different pond-management practices, pond physicochemistry, and surrounding land use. The results of boosted regression-tree models and analyses of similarity showed that pond draining had little effect on invasive fish control, water quality, or aquatic biodiversity. Draining even facilitated the colonization of farm ponds by invasive red swamp crayfish (Procambarus clarkii), which in turn may have detrimental effects on the biodiversity and water quality of farm ponds. Our results highlight the need for reconsidering current pond management and developing management plans with respect to multifunctionality of such ponds. Efectos del Drenado de Estanques sobre la Biodiversidad y la Calidad del Agua en Estanques de Cultivo. © 2013 Society for Conservation Biology.

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Woo-Sic; Cho, Yong-Jung; Lee, Yeol-Hyeong; Park, JeongKi; Kim, GeonTae; Kim, Ohyun

2017-11-01

We investigated the degradation mechanism of a-InGaZnO TFTs under simultaneous gate and drain bias stress. Gate and drain bias of 20 V were applied simultaneously to induce current stress, and abnormal turn-around behavior in transfer characteristics with a hump phenomenon were identified. Hump characteristics were interpreted in terms of parasitic current path, and the degradation itself was found to be caused dominantly by the electrical field and to be accelerated with current by Joule heating. The mechanism of asymmetrical degradation after current stress was also investigated. By decomposing the curves into two curves and measuring the relaxation behavior of the stressed TFTs, we also found that abnormal turn-around behavior in the transfer characteristics was related to acceptor-like states.

Transient fluvial incision as an indicator of active faulting and surface uplift in the Moroccan High Atlas.

NASA Astrophysics Data System (ADS)

Boulton, Sarah; Stokes, Martin; Mather, Anne

2013-04-01

Quantifying the extent to which geomorphic features can be used to extract tectonic signals is a key challenge for the Earth Sciences. Here, we analyse the long profiles of rivers that drain southwards across the Southern Atlas Fault (SAF), a segmented thrust fault that forms the southern margin of the High Atlas Mountains in Morocco, with the aim of deriving new data on the recent activity of this little known fault system. River long profiles were extracted for the 32 major rivers that drain southwards into the Ouarzazate foreland basin. Of these, twelve exhibit concave-up river profiles with a mean concavity (Θ) of 0.61 and normalized steepness indices (Ksn) in the range 42-219; these are interpreted as rivers at or near steady-state. By contrast, 20 rivers are characterised by the presence of at least one knickpoint upstream of the thrust front. Knickzone height (the vertical distance between the knickpoint and the fault) varies from 100 - 1300 m, with calculated amounts of uplift at the range bounding fault ranging from 1040 - 80 m. In map view, knickpoint locations generally plot along sub-parallel lines to the thrust front and there are no obvious relationships with specific lithological units or boundaries. Furthermore, drainage areas upstream of the knickpoints range over several orders of magnitude indicating that they are not pinned at threshold drainage areas. Therefore, these features are interpreted as a transient response to base-level change. However, three distinct populations of knickpoints can be recognised based upon knickpoint elevation, these are termed K1, K2 and K3 and channel reaches are universally steeper below knickpoints than above. K1 and K2 knickpoints share common characteristics in that the elevation of the knickpoints, calculated incision and ksn all increase from west to east. Whereas, K3 knickpoints show little systematic variation along the range front, are observed at the lowest altitudes with calculated incision of < 200 m. Therefore, the K3 knickpoints are interpreted as the youngest forcing event possibly related to the regional capture of the Dades River by the Draa River < 300 ka. However, prior to this time the channels would have drained into an internally draining basin, so eustatic sea level fall cannot be a driving mechanism for the higher and therefore, older knickpoints. Thus it is more likely that these knickpoints have developed in response to Quaternary tectonic forcing along the SAF where rock uplift is greater in the east.

Analytical results from an environmental investigation of six sites on Kirtland Air Force Base, New Mexico, 1993-94

USGS Publications Warehouse

Wilcox, Ralph

1995-01-01

The six sites investigated include silver recovery units; a buried caustic drain line; a neutralization pit; an evaporation/infiltration pond; the Manzano fire training area; and a waste oil underground storage tank. Environmental samples of soil, pond sediment, soil gas, and water and gas in floor drains were collected and analyzed. Field quality-control samples were also collected and analyzed in association with the environmental samples. The six sites were investigated because past or current activities could have resulted in contamination of soil, pond sediment, or water and sediment in drains.

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

NASA Astrophysics Data System (ADS)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

A pH sensor based on electric properties of nanotubes on a glass substrate

PubMed Central

Nakamura, Motonori; Ishii, Atsushi; Subagyo, Agus; Hosoi, Hirotaka; Sueoka, Kazuhisa; Mukasa, Koichi

2007-01-01

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface. PMID:21806848

Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET

NASA Astrophysics Data System (ADS)

Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng

2014-01-01

In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to investigate the impact of random discrete dopant (RDD) including extension induced fluctuation in 14 nm silicon-on-insulator (SOI) gate-source/drain (G-S/D) underlap fin field effect transistor (FinFET). To fully understand the RDD impact in extension, RDD effect is evaluated in channel and extension separately and together. The statistical variability of FinFET performance parameters including threshold voltage (Vth), subthreshold slope (SS), drain induced barrier lowering (DIBL), drive current (Ion), and leakage current (Ioff) are analyzed. The results indicate that RDD in extension can lead to substantial variability, especially for SS, DIBL, and Ion and should be taken into account together with that in channel to get an accurate estimation on RDF. Meanwhile, higher doping concentration of extension region is suggested from the perspective of overall variability control.

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

NASA Technical Reports Server (NTRS)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study.

PubMed

Kumar, Barun; Bhate, Kalyani; Dolas, R S; Kumar, Sn Santhosh; Waknis, Pushkar

2016-12-01

Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus.

A scaling and experimental approach for investigating in-vessel cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, R.E.

1997-02-01

The TMI-2 accident experienced the relocation of a large quantity of core material to the lower plenum. The TMI-2 vessel investigation project concluded that approximately 20 metric tonnes of once molten fuel material drained into the RPV lower head. As a result, the lower head wall experienced a thermal transient that has been characterized as reaching temperatures as high as 1100{degrees}C, then a cooling transient with a rate of 10 to 100{degrees}C/min. Two mechanisms have been proposed as possible explanations for this cooling behavior. One is the ingression of water through core material as a result of interconnected cracks inmore » the frozen debris and/or water ingression around the crust which is formed on internal structures (core supports and in-core instrumentation) in the lower head. The second focuses on the lack of adhesion of oxidic core debris to the RPV wall when the debris contacts the wall. Furthermore, the potential for strain of the RPV lower head when the wall is overheated could provide for a significant cooling path for water to ingress between the RPV and the frozen core material next to the wall. To examine these proposed mechanisms, a set of scaled experiments have been developed to examine the potential for cooling. These are performed in a scaled system in which the high temperature molten material is iron termite and the RPV wall is carbon steel. A termite mass of 40 kg is used and the simulated reactor vessels have water in the lower head at pressures up to 2.2 MPa. Furthermore, two different thicknesses of the vessel wall are examined with the thicker vessel having virtually no potential for material creep during the experiment and the thinner wall having the potential for substantial creep. Moreover, the experiment includes the option of having molten iron as the first material to drain into the RPV lower head or molten aluminum oxide being the only material that drains into the test configuration.« less

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection.

PubMed

Suaebah, Evi; Naramura, Takuro; Myodo, Miho; Hasegawa, Masataka; Shoji, Shuichi; Buendia, Jorge J; Kawarada, Hiroshi

2017-07-21

Here, we propose simple diamond functionalization by carboxyl termination for adenosine triphosphate (ATP) detection by an aptamer. The high-sensitivity label-free aptamer sensor for ATP detection was fabricated on nanocrystalline diamond (NCD). Carboxyl termination of the NCD surface by vacuum ultraviolet excimer laser and fluorine termination of the background region as a passivated layer were investigated by X-ray photoelectron spectroscopy. Single strand DNA (amide modification) was used as the supporting biomolecule to immobilize into the diamond surface via carboxyl termination and become a double strand with aptamer. ATP detection by aptamer was observed as a 66% fluorescence signal intensity decrease of the hybridization intensity signal. The sensor operation was also investigated by the field-effect characteristics. The shift of the drain current-drain voltage characteristics was used as the indicator for detection of ATP. From the field-effect characteristics, the shift of the drain current-drain voltage was observed in the negative direction. The negative charge direction shows that the aptamer is capable of detecting ATP. The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.

Pore Fluid Pressure Development in Compacting Fault Gouge in Theory, Experiments, and Nature

NASA Astrophysics Data System (ADS)

Faulkner, D. R.; Sanchez-Roa, C.; Boulton, C.; den Hartog, S. A. M.

2018-01-01

The strength of fault zones is strongly dependent on pore fluid pressures within them. Moreover, transient changes in pore fluid pressure can lead to a variety of slip behavior from creep to unstable slip manifested as earthquakes or slow slip events. The frictional properties of low-permeability fault gouge in nature and experiment can be affected by pore fluid pressure development through compaction within the gouge layer, even when the boundaries are drained. Here the conditions under which significant pore fluid pressures develop are analyzed analytically, numerically, and experimentally. Friction experiments on low-permeability fault gouge at different sliding velocities show progressive weakening as slip rate is increased, indicating that faster experiments are incapable of draining the pore fluid pressure produced by compaction. Experiments are used to constrain the evolution of the permeability and pore volume needed for numerical modeling of pore fluid pressure build up. The numerical results are in good agreement with the experiments, indicating that the principal physical processes have been considered. The model is used to analyze the effect of pore fluid pressure transients on the determination of the frictional properties, illustrating that intrinsic velocity-strengthening behavior can appear velocity weakening if pore fluid pressure is not given sufficient time to equilibrate. The results illustrate that care must be taken when measuring experimentally the frictional characteristics of low-permeability fault gouge. The contribution of compaction-induced pore fluid pressurization leading to weakening of natural faults is considered. Cyclic pressurization of pore fluid within fault gouge during successive earthquakes on larger faults may reset porosity and hence the capacity for compaction weakening.

Transient river response, captured by channel steepness and its concavity

NASA Astrophysics Data System (ADS)

Vanacker, Veerle; von Blanckenburg, Friedhelm; Govers, Gerard; Molina, Armando; Campforts, Benjamin; Kubik, Peter W.

2015-01-01

Mountain rivers draining tropical regions are known to be great conveyor belts carrying efficiently more than half of the global sediment flux to the oceans. Many tropical mountain areas are located in tectonically active belts where the hillslope and stream channel morphology are rapidly evolving in response to changes in base level. Here, we report basin-wide denudation rates for an east-west transect through the tropical Andes. Hillslope and channel morphology vary systematically from east to west, reflecting the transition from high relief, strongly dissected topography in the escarpment zones into relatively low relief topography in the inter-Andean valley. The spatial pattern of differential denudation rates reflects the transient adjustment of the landscape to rapid river incision following tectonic uplift and river diversion. In the inter-Andean valley, upstream of the wave of incision, slopes and river channels display a relatively smooth, concave-up morphology and denudation rates (time scale of 104-105 a) are consistently low (3 to 200 mm/ka). In contrast, slopes and river channels of rejuvenated basins draining the eastern cordillera are steep to very steep; and the studied drainage basins show a wide range of denudation rate values (60 to 400 mm/ka) that increase systematically with increasing basin mean slope gradient, channel steepness, and channel convexity. Drainage basins that are characterised by strong convexities in their river longitudinal profiles systematically have higher denudation rates. As such, this is one of the first studies that provides field-based evidence of a correlation between channel concavity and basin mean denudation rates, consistent with process-based fluvial incision models.

Design and Testing of an Active Heat Rejection Radiator with Digital Turn-Down Capability

NASA Technical Reports Server (NTRS)

Sunada, Eric; Birur, Gajanana C.; Ganapathi, Gani B.; Miller, Jennifer; Berisford, Daniel; Stephan, Ryan

2010-01-01

NASA's proposed lunar lander, Altair, will be exposed to vastly different external environment temperatures. The challenges to the active thermal control system (ATCS) are compounded by unfavorable transients in the internal waste heat dissipation profile: the lowest heat load occurs in the coldest environment while peak loads coincide with the warmest environment. The current baseline for this fluid is a 50/50 inhibited propylene glycol/water mixture with a freeze temperature around -35 C. While the overall size of the radiator's heat rejection area is dictated by the worst case hot scenario, a turn-down feature is necessary to tolerate the worst case cold scenario. A radiator with digital turn-down capability is being designed as a robust means to maintain cabin environment and equipment temperatures while minimizing mass and power consumption. It utilizes active valving to isolate and render ineffective any number of parallel flow tubes which span across the ATCS radiator. Several options were assessed in a trade-study to accommodate flow tube isolation and how to deal with the stagnant fluid that would otherwise remain in the tube. Bread-board environmental tests were conducted for options to drain the fluid from a turned-down leg as well an option to allow a leg to freeze/thaw. Each drain option involved a positive displacement gear pump with different methods of providing a pressure head to feed it. Test results showed that a start-up heater used to generate vapor at the tube inlet held the most promise for tube evacuation. Based on these test results and conclusions drawn from the trade-study, a full-scale radiator design is being worked for the Altair mission profile.

Effectiveness of Postoperative Wound Drains in One- and Two-Level Cervical Spine Fusions

PubMed Central

Poorman, Caroline E.; Bianco, Kristina M.; Boniello, Anthony; Yang, Sun; Gerling, Michael C.

2014-01-01

Background Cervical drains have historically been used to avoid postoperative wound and respiratory complications such as excessive edema, hematoma, infection, re-intubation, delayed extubation, or respiratory distress. Recently, some surgeons have ceased using drains because they may prolong hospital stay, operative time, or patient discomfort. The objective of this retrospective case-control series is to investigate the effectiveness of postoperative drains following one- and two-level cervical fusions. Methods A chart review was conducted at a single institution from 2010-2013. Outcome measures included operative time, hospital stay, estimated blood loss and incidence of wound complications (infection, hematoma, edema, and complications with wound healing or evacuation), respiratory complications (delayed extubation, re-intubation, and respiratory treatment), and overall complications (wound complications, respiratory complications, dysphagia, and other complications). Statistical analyses including independent samples t-test, chi-square, analysis of covariance, and linear regression were used to compare patients who received a postoperative drain to those who did not. Results The study population included 39 patients who received a postoperative drain and 42 patients who did not. There were no differences in demographics between the two groups. Patients with drains showed increased operative time (100.1 vs 69.3 min, p < 0.001), hospital stay (38.9 vs. 31.7 hrs, p = 0.021), and blood loss (62.7 vs 29.1 mL, p < 0.001) compared to patients without drains. The frequency of wound complications, respiratory complications, and overall complications did not vary significantly between groups. Conclusions/Level of Evidence Cervical drains may not be necessary for patients undergoing one- and two-level cervical fusion. While there were no differences in incidence of complications between groups, patients treated with drains had significantly longer operative time and length of hospital stay. Clinical relevance This could contribute to excessive costs for patients treated with drains, despite the lack of compelling evidence of the advantages of this treatment in the literature and in the current study. PMID:25694927

Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition.

PubMed

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn; Hsu, Jui-Mei

2018-03-01

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 °C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13 × 108, saturation mobility of 10 cm2/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

SLD-MOSCNT: A new MOSCNT with step-linear doping profile in the source and drain regions

NASA Astrophysics Data System (ADS)

Tahne, Behrooz Abdi; Naderi, Ali

2017-01-01

In this paper, a new structure, step-linear doping MOSCNT (SLD-MOSCNT), is proposed to improve the performance of basic MOSCNTs. The basic structure suffers from band to band tunneling (BTBT). We show that using SLD profile for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilibrium Green’s function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel effects. Also, the investigation of cutoff frequency of the different structures shows that the SLD has the highest cutoff frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for different channel lengths. This improvement is more significant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

NASA Astrophysics Data System (ADS)

Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2018-06-01

We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

Evaluation of gravimetric techniques to estimate the microvascular filtration coefficient

PubMed Central

Dongaonkar, R. M.; Laine, G. A.; Stewart, R. H.

2011-01-01

Microvascular permeability to water is characterized by the microvascular filtration coefficient (Kf). Conventional gravimetric techniques to estimate Kf rely on data obtained from either transient or steady-state increases in organ weight in response to increases in microvascular pressure. Both techniques result in considerably different estimates and neither account for interstitial fluid storage and lymphatic return. We therefore developed a theoretical framework to evaluate Kf estimation techniques by 1) comparing conventional techniques to a novel technique that includes effects of interstitial fluid storage and lymphatic return, 2) evaluating the ability of conventional techniques to reproduce Kf from simulated gravimetric data generated by a realistic interstitial fluid balance model, 3) analyzing new data collected from rat intestine, and 4) analyzing previously reported data. These approaches revealed that the steady-state gravimetric technique yields estimates that are not directly related to Kf and are in some cases directly proportional to interstitial compliance. However, the transient gravimetric technique yields accurate estimates in some organs, because the typical experimental duration minimizes the effects of interstitial fluid storage and lymphatic return. Furthermore, our analytical framework reveals that the supposed requirement of tying off all draining lymphatic vessels for the transient technique is unnecessary. Finally, our numerical simulations indicate that our comprehensive technique accurately reproduces the value of Kf in all organs, is not confounded by interstitial storage and lymphatic return, and provides corroboration of the estimate from the transient technique. PMID:21346245

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study

PubMed Central

Bhate, Kalyani; Dolas, RS; Kumar, SN Santhosh; Waknis, Pushkar

2016-01-01

Introduction Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. Aim To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Materials and Methods Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. Results The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. Conclusion The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus. PMID:28209003

Large thoracic tumor without superior vena cava syndrome.

PubMed

Garmpis, Nikolaos; Damaskos, Christos; Patelis, Nikolaos; Dimitroulis, Dimitrios; Spartalis, Eleftherios; Tomos, Ioannis; Garmpi, Anna; Spartalis, Michael; Antoniou, Efstathios A; Kontzoglou, Konstantinos; Tomos, Periklis

2017-04-10

A 62 year-old male with long-standing smoking history presented with hemoptysis. Plain chest x-ray showed abnormal findings proximate to the right pulmonary hilum. Bronchoscopy revealed a fragile exophytic tumor of the right wall of the lower third of the trachea, infiltrating the right main bronchus (75% stenosis) and the right upper lobar bronchus (near total occlusion). Contrast-enhanced chest CT demonstrated a 7.2x4.9 cm tumor contiguous to the above-mentioned structures, mediastinal lymph node pathology, and a vessel coursing inferiorly to the left of the aortic arch and anterior to the left hilum. Despite the tumor constricting the right superior vena cava, no signs of superior vena cava syndrome were present. In this case, the patient does not present with Superior Vena Cava (SVC) syndrome, as expected due to the constriction of the (right) SVC caused by the tumor, since head and neck veins drain through the Persistent Left Superior Vena Cava (PLSVC). PLSVC is the most common thoracic venous anomaly with an incidence of 0.3% to 0.5% of the general population and it is a congenital anomaly caused by the failure of the left anterior cardinal vein to regress and to consequently form the ligament of Marshall during fetal development. It is associated with absence of the left brachiocephalic vein and in 10 to 20% of cases the right SVC is absent. Two potential draining points of the PLSVC have been previously reported. In the majority of cases PLSVC drains directly into the coronary sinus, but less frequently it drains into the left atrium or the left superior pulmonary vein. In cases where the PLSVC drains into the coronary sinus, congenital heart defects are rare. The patient usually remains asymptomatic and PLSVC is an incidental finding during radiographic imaging or medical procedures. When the PLSVC drains into the left atrium or the left superior pulmonary vein, a right-to-left shunt is formed; a condition usually asymptomatic. In some reported cases this PLSVC variant presents with persistent, unexplained hypoxia or cyanosis and embolisation causing recurrent transient ischemic attacks and/or cerebral abscesses. This PLSVC variant is more often associated with absence of the right SVC and congenital heart abnormalities.

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

NASA Astrophysics Data System (ADS)

Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

2015-05-01

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

Back bias induced dynamic and steep subthreshold swing in junctionless transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parihar, Mukta Singh; Kranti, Abhinav, E-mail: akranti@iiti.ac.in

In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change inmore » drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.« less

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

2017-03-01

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

Short-term effects of salinity reduction and drainage on salt-marsh biogeochemical cycling and Spartina (Cordgrass) production

USGS Publications Warehouse

Portnoy, J.W.; Valiela, I.

1997-01-01

To assess the biogeochemical effects of tidal restrictions on salt-marsh sulfur cycling and plant growth, cores of short-form Spartina alterniflora peat were desalinated and kept either waterlogged or drained in greenhouse microcosms. Changes in net Spartina production, and porewater and solid phase chemistry of treated cores were compared to natural conditions in the field collection site over a 21-mo period. Net production among treatments increased significantly in drained and waterlogged peat compared to field conditions during the first growing season. Constantly high sulfide in waterlogged cores accompanied reduced plant growth. Aeration invigorated growth in drained cores but led to oxidization of sulfide minerals and to lowered pH. During the second growing season, growth declined in the drained treatment, probably because of acidification and decreased dissolved inorganic nitrogen. Results are pertinent to the success of current wetland protection and restoration activities in the coastal zone.

Remaining Sites Verification Package for the 100-F-46, 119-F Stack Sampling French Drain, Waste Site Reclassification Form 2008-021

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Capron

2008-08-08

The 100-F-46 french drain consisted of a 1.5 to 3 m long, vertically buried, gravel-filled pipe that was approximately 1 m in diameter. Also included in this waste site was a 5 cm cast-iron pipeline that drained condensate from the 119-F Stack Sampling Building into the 100-F-46 french drain. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminant concentrations do notmore » preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

NASA Astrophysics Data System (ADS)

Ni, Kai; Sternberg, Andrew L.; Zhang, En Xia; Kozub, John A.; Jiang, Rong; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M.; Alles, Michael L.; McMorrow, Dale; Lin, Jianqiang; Vardi, Alon; del Alamo, Jesús

2017-08-01

A tunable wavelength laser system and high-resolution transient capture system are introduced to characterize transients in high-mobility MOSFETs. The experimental configuration enables resolution of fast transient signals and new understanding of charge collection mechanisms. The channel layer is critical in the charge collection process for the InGaAs FinFETs examined here. The transient current mainly comes from the channel current, due to shunt effects and parasitic bipolar effects, instead of the junction collection. The charge amplification factor is found to be as high as 14, which makes this technology relatively sensitive to transient radiation. The peak current is inversely proportional to the device gate length. Simulations show that the parasitic bipolar effect is due to source-to-channel barrier lowering caused by hole accumulation in the source and channel. Charge deposited in the channel causes prompt current, while charge deposited below the channel causes delayed and slow current.

Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

NASA Astrophysics Data System (ADS)

Arefinia, Zahra; Orouji, Ali A.

2009-02-01

The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

Profiling of the injected charge drift current transients by cross-sectional scanning technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.

2014-02-07

The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has beenmore » shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kapusta, P.; Kisielewski, B.

In this paper the overvoltage protection modules (OVP) for the power supply (PS) system of the Belle II pixel detector (PXD) are described. The aim of the OVP is to protect the detector and associated electronics against overvoltage conditions. Most critical in the system are voltages supplying the front-end ASICs. The PXD detector consists of the DEPFET sensor modules with integrated chips like the Drain Current Digitizer, the Switcher and the Data Handling Processor. These chips, implemented in modern sub-micron technologies, are quite vulnerable to variations in the supply voltages. The PXD will be placed in the Belle II experimentmore » as close as possible to the interaction point, where access during experiment is very limited or even impossible, thus the PS and OVP systems exploit the remote-sensing method. Overvoltage conditions are due to failures of the PS itself, wrong setting of the output voltages or transient voltages coming out of hard noisy environment of the experiment. The OVP modules are parts of the PS modules. For powering the PXD 40 PS modules are placed 15 m outside the Belle II spectrometer. Each one is equipped with the OVP board. All voltages (22) are grouped in 4 domains: Analog, Digital, Steering and Gate which have independent grounds. The OVP boards are designed from integrated circuits from Linear Technology. All configurations were simulated with the Spice program. The control electronics is designed in a Xilinx CPLD. Two types of integrated circuits were used. LT4356 surge stopper protects loads from high voltage transients. The output voltages are limited to a safe value and also protect loads against over current faults. For less critical voltages, the LTC2912 voltage monitors are used that detect under-voltage and overvoltage events. It has to be noted that the OVP system is working independently of any other protection of the PS system, which increases its overall reliability. (authors)« less

An underlap field-effect transistor for electrical detection of influenza

NASA Astrophysics Data System (ADS)

Lee, Kwang-Won; Choi, Sung-Jin; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2010-01-01

An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and avian influenza antibody (anti-AI) were designed as a receptor molecule and a target material, respectively. The drain current was significantly decreased after the binding of negatively charged anti-AI on the underlap channel. A set of control experiments supports that only the biomolecules on the underlap channel effectively modulate the drain current. With the merits of a simple fabrication process, complementary metal-oxide-semiconductor compatibility, and enhanced sensitivity, the underlap FET could be a promising candidate for a chip-based biosensor.

Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition

NASA Astrophysics Data System (ADS)

Oh, Himchan; Hwang, Chi-Sun; Pi, Jae-Eun; Ki Ryu, Min; Ko Park, Sang-Hee; Yong Chu, Hye

2013-09-01

We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Characteristics of camel-gate structures with active doping channel profiles

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Lour, Wen-Shiung; Laih, Lih-Wen; Liu, Rong-Chau; Liu, Wen-Chau

1996-03-01

In this paper, we demonstrate the influence of channel doping profile on the performances of camel-gate field effect transistors (CAMFETs). For comparison, single and tri-step doping channel structures with identical doping thickness products are employed, while other parameters are kept unchanged. The results of a theoretical analysis show that the single doping channel FET with lightly doping active layer has higher barrier height and drain-source saturation current. However, the transconductance is decreased. For a tri-step doping channel structure, it is found that the output drain-source saturation current and the barrier height are enhanced. Furthermore, the relatively voltage independent performances are improved. Two CAMFETs with single and tri-step doping channel structures have been fabricated and discussed. The devices exhibit nearly voltage independent transconductances of 144 mS mm -1 and 222 mS mm -1 for single and tri-step doping channel CAMFETs, respectively. The operation gate voltage may extend to ± 1.5 V for a tri-step doping channel CAMFET. In addition, the drain current densities of > 750 and 405 mA mm -1 are obtained for the tri-step and single doping CAMFETs. These experimental results are inconsistent with theoretical analysis.

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Broadband pH-Sensing Organic Transistors with Polymeric Sensing Layers Featuring Liquid Crystal Microdomains Encapsulated by Di-Block Copolymer Chains.

PubMed

Seo, Jooyeok; Song, Myeonghun; Jeong, Jaehoon; Nam, Sungho; Heo, Inseok; Park, Soo-Young; Kang, Inn-Kyu; Lee, Joon-Hyung; Kim, Hwajeong; Kim, Youngkyoo

2016-09-14

We report broadband pH-sensing organic field-effect transistors (OFETs) with the polymer-dispersed liquid crystal (PDLC) sensing layers. The PDLC layers are prepared by spin-coating using ethanol solutions containing 4-cyano-4'-pentyl-biphenyl (5CB) and a diblock copolymer (PAA-b-PCBOA) that consists of LC-philic block [poly(4-cyano-biphenyl-4-oxyundecyl acrylate) (PCBOA)] and acrylic acid block [poly(acrylic acid) (PAA)]. The spin-coated sensing layers feature of 5CB microdomains (<5 μm) encapsulated by the PAA-b-PCBOA polymer chains. The resulting LC-integrated-OFETs (PDLC-i-OFETs) can detect precisely and reproducibly a wide range of pH with only small amounts (10-40 μL) of analyte solutions in both static and dynamic perfusion modes. The positive drain current change is measured for acidic solutions (pH < 7), whereas basic solutions (pH > 7) result in the negative change of drain current. The drain current trend in the present PDLC-i-OFET devices is explained by the shrinking-expanding mechanism of the PAA chains in the diblock copolymer layers.

Quantum Mechanical Study of Nanoscale MOSFET

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Transient current induced in thin film diamonds by swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5 + and 45 MeV Si 7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended.more » Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.« less

Transient current induced in thin film diamonds by swift heavy ions

DOE PAGES

Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; ...

2017-04-05

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5 + and 45 MeV Si 7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended.more » Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.« less

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Accuracy of surgical wound drainage measurements: an analysis and comparison.

PubMed

Yue, Brian; Nizzero, Danielle; Zhang, Chunxiao; van Zyl, Natasha; Ting, Jeannette

2015-05-01

Surgical drain tube readings can influence the clinical management of the post-operative patient. The accuracy of these readings has not been documented in the current literature and this experimental study aims to address this paucity. Aliquots (10, 25, 40 and 90 mL) of black tea solution prepared to mimic haemoserous fluid were injected into UnoVac, RedoVac and Jackson-Pratt drain tubes. Nursing and medical staff from a tertiary hospital were asked to estimate drain volumes by direct observation; analysis of variance was performed on the results and significance level was set at 0.05. Doctors and nurses are equally accurate in estimating drain tube volumes. Jackson-Pratt systems were found to be the most accurate for intermediate volumes of 25 and 40 mL. For extreme of volumes (both high and low), all drainage systems were inaccurate. This study suggests that for intermediate volumes (25 and 40 mL), Jackson-Pratt is the drainage system of choice. The accuracy of volume measurement is diminished at the extremes of drain volumes; emptying of drainage systems is recommended to avoid overfilling of drainage systems. © 2014 Royal Australasian College of Surgeons.

Drainage effects on the transient, near-surface hydrologic response of a steep hillslope to rainfall: Implications for slope stability, Edmonds, Washington, USA

USGS Publications Warehouse

Biavati, G.; Godt, J.W.; McKenna, J.P.

2006-01-01

Shallow landslides on steep (>25??) hillsides along Puget Sound have resulted in occasional loss of life and costly damage to property during intense or prolonged rainfall. As part of a larger project to assess landslide hazards in the Seattle area, the U.S. Geological Survey instrumented two coastal bluff sites in 2001 to observe the subsurface hydrologic response to rainfall. The instrumentation at one of these sites, near Edmonds, Washington, consists of two rain gauges, two water-content probes that measure volumetric water content at eight depths between 0.2 and 2.0 m, and two tensiometer nests that measure soil-water suction at six depths ranging from 0.2 to 1.5m. Measurements from these instruments are used to test one- and two-dimensional numerical models of infiltration and groundwater flow. Capillary-rise tests, performed in the laboratory on soil sample from the Edmonds site, are used to define the soil hydraulic properties for the wetting process. The field observations of water content and suction show an apparent effect of porosity variation with depth on the hydraulic response to rainfall. Using a range of physical properties consistent with our laboratory and field measurements, we perform sensitivity analyses to investigate the effects of variation in physical and hydraulic properties of the soil on rainfall infiltration, pore-pressure response, and, hence, slope stability. For a two-layer-system in which the hydraulic conductivity of the upper layer is at least 10 times greater than the conductivity of the lower layer, and the infiltration rate is greater than the conductivity of the lower layer, a perched water table forms above the layer boundary potentially destabilizing the upper layer of soil. Two-dimensional modeling results indicate that the addition of a simple trench drain to the same two-layer slope has differing effects on the hydraulic response depending on the initial pressure head conditions. For slope-parallel flow conditions, pressure head is significantly reduced near the drain; however, for transient, vertical infiltration in a partially saturated soil, conditions consistent with those observed during monitoring at the Edmonds site, the drain decreases the thickness of a perched water table by a small amount.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Equivalent input spectrum and drain current spectrum for 1/ƒ noise in short channel MOS transistors

NASA Astrophysics Data System (ADS)

Gentil, P.; Mounib, A.

1981-05-01

Flicker noise in MOS transistors can be evaluated by measuring the spectrum SID of the drain current fluctuation or the spectrum Sve of an equivalent gate fluctuation. We show here that experimental variations of {S I D}/{Sve} are in good agreement with gm2 by considering a model of the transconductance gm which takes into account the variations of the channel carriers mobility with the surface electric field. The model agrees with the experimental results obtained on short channel MOS transistors which exhibit large variations of mobility with the gate voltage. The validity of physical interpretations of noise data on MOS transistors is examined.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafa, Salwa; Lee, Ida; Islam, Syed K

2011-01-01

In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/more » L.« less

Influence of Scattering on Ballistic Nanotransistor Design

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Svizhenko, Alexei; Biegel, Bryan, A. (Technical Monitor)

2002-01-01

Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer.

Regenerative switching CMOS system

DOEpatents

Welch, James D.

1998-01-01

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Regenerative switching CMOS system

DOEpatents

Welch, J.D.

1998-06-02

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

Stability of amorphous silicon thin film transistors and circuits

NASA Astrophysics Data System (ADS)

Liu, Ting

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have been widely used for the active-matrix addressing of flat panel displays, optical scanners and sensors. Extending the application of the a-Si TFTs from switches to current sources, which requires continuous operation such as for active-matrix organic light-emitting-diode (AMOLED) pixels, makes stability a critical issue. This thesis first presents a two-stage model for the stability characterization and reliable lifetime prediction for highly stable a-Si TFTs under low gate-field stress. Two stages of the threshold voltage shift are identified from the decrease of the drain saturation current under low-gate field. The first initial stage dominates up to hours or days near room temperature. It can be characterized with a stretched-exponential model, with the underlying physical mechanism of charge trapping in the gate dielectric. The second stage dominates in the long term and then saturates. It corresponds to the breaking of weak bonds in the amorphous silicon. It can be modeled with a "unified stretched exponential fit," in which a thermalization energy is used to unify experimental measurements of drain current decay at different temperatures into a single curve. Two groups of experiments were conducted to reduce the drain current instability of a-Si TFTs under prolonged gate bias. Deposition conditions for the silicon nitride (SiNx) gate insulator and the a-Si channel layer were varied, and TFTs were fabricated with all reactive ion etching steps, or with all wet etching steps, the latter in a new process. The two-stage model that unites charge trapping in the SiNx gate dielectric and defect generation in the a-Si channel was used to interpret the experimental results. We identified the optimal substrate temperature, gas flow ratios, and RF deposition power densities. The stability of the a-Si channel depends also on the deposition conditions for the underlying SiNx gate insulator. TFTs made with wet etching are more stable than TFTs made with reactive ion etching. Combining the various improvements raised the extrapolated 50% decay time of the drain current of back channel passivated dry-etched TFTs under continuous operation at 20°C from 3.3 x 104 sec (9.2 hours) to 4.4 x 107 sec (1.4 years). The 50% lifetime can be further improved by ˜2 times through wet etching process. Two assumptions in the two-stage model were revisited. First, the distribution of the gap state density in a-Si was obtained with the field-effect technique. The redistribution of the gap state density after low-gate field stress supports the idea that defect creation in a-Si dominates in the long term. Second, the drain-bias dependence of drain current degradation was measured and modeled. The unified stretched exponential was validated for a-Si TFTs operating in saturation. Finally, a new 3-TFT voltage-programmed pixel circuit with an in-pixel current source is presented. This circuit is largely insensitive to the TFT threshold voltage shift. The fabricated pixel circuit provides organic light-emitting diode (OLED) currents ranging from 25 nA to 2.9 microA, an on/off ratio of 116 at typical quarter graphics display resolution (QVGA) display timing. The overall conclusion of this thesis research is that the operating life of a-Si TFTs can be quite long, and that these transistors can expect to find yet more applications in large area electronics.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

EVALUATION OF FABRIC MEMBRANES FOR USE IN SALTSTONE DRAIN WATER SYSTEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickenheim, B.; Miller, D.; Burket, P.

2012-03-08

Saltstone Disposal Unit 2 contains a sheet drain fabric intended to separate solids from drain water to be returned to the Salt Feed Tank. A similar system installed in Vault 4 appears to be ineffective in keeping solids out of the drain water return lines. Waste Solidification Engineering is considering installation of an additional fabric membrane to supplement the existing sheet drain in SDU 2. Amerdrain 200 is the product currently installed in SDU 2. This product is no longer available, so Sitedrain 94 was used as the replacement product in this testing. Fabrics with apparent opening sizes of 10,more » 25, 50 and 100 microns were evaluated. These fabrics were evaluated under three separate test conditions, a water flow test, a solids retention test and a grout pour test. A flow test with water showed that installation of an additional filter layer will predictably reduce the theoretical flux through the sheet drain. The manufacturer reports the flux for Sitedrain 94 as 150 gpm/ft{sup 2} by ASTM D-4491. This compares reasonably well with the 117 gpm/ft{sup 2} obtained in this testing. A combination of the 10 micron fabric with Sitedrain 94 could be expected to decrease flux by about 10 times as compared to Sitedrain 94 alone. The different media were used to filter a slag and fly ash mixture from water. Slag historically has the smallest nominal particle size of the premix components. Cement was omitted from the test because of its reactivity with water would prohibit accurately particle size measurements of the filtered samples. All four media sizes were able to remove greater than 95% of particles larger than 100 microns from the slurry. The smaller opening sizes were increasingly effective in removing more particles. The 10 micron filter captured 15% of the total amount of solids used in the test. This result implies that some insoluble particles may still be able to enter the drain water collection system, although the overall solids rejection is significantly improved over the current design. Test boxes were filled with grout to evaluate the performance of the sheet drain and fabrics in a simulated vault environment. All of the tests produced a similar amount of drain water, between 8-11% of the amount of water in the mix, which is expected with the targeted formulation. All of the collected drain waters contained some amount of solids, although the 10 micron filter did not appear to allow any premix materials to pass through. The solids collected from this box are believed to consist of calcium carbonate based on one ICP-AES measurement. Any of the four candidate fabrics would be an improvement over the sheet drain alone relative to solids removal. The 10 micron fabric is the only candidate that stopped all premix material from passing. The 10 micron fabric will also cause the largest decrease in flux. This decrease in flux was not enough to inhibit the total amount of drain water removed, but may lead to increased time to remove standing water prior to subsequent pours in the facility. The acceptability of reduced liquid flux through the 10 micron fabric will depend on the amount of excess water to be removed, the time available for water removal and the total area of fabric installed at the disposal cell.« less

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Integrated, Continuous Emulsion Creamer.

PubMed

Cochrane, Wesley G; Hackler, Amber L; Cavett, Valerie J; Price, Alexander K; Paegel, Brian M

2017-12-19

Automated and reproducible sample handling is a key requirement for high-throughput compound screening and currently demands heavy reliance on expensive robotics in screening centers. Integrated droplet microfluidic screening processors are poised to replace robotic automation by miniaturizing biochemical reactions to the droplet scale. These processors must generate, incubate, and sort droplets for continuous droplet screening, passively handling millions of droplets with complete uniformity, especially during the key step of sample incubation. Here, we disclose an integrated microfluidic emulsion creamer that packs ("creams") assay droplets by draining away excess oil through microfabricated drain channels. The drained oil coflows with creamed emulsion and then reintroduces the oil to disperse the droplets at the circuit terminus for analysis. Creamed emulsion assay incubation time dispersion was 1.7%, 3-fold less than other reported incubators. The integrated, continuous emulsion creamer (ICEcreamer) was used to miniaturize and optimize measurements of various enzymatic activities (phosphodiesterase, kinase, bacterial translation) under multiple- and single-turnover conditions. Combining the ICEcreamer with current integrated microfluidic DNA-encoded library bead processors eliminates potentially cumbersome instrumentation engineering challenges and is compatible with assays of diverse target class activities commonly investigated in drug discovery.

Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minagawa, M.; Nakai, K.; Baba, A.

2011-12-23

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for devicemore » without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.« less

Managing Artificially Drained Low-Gradient Agricultural Headwaters for Enhanced Ecosystem Functions

PubMed Central

Pierce, Samuel C.; Kröger, Robert; Pezeshki, Reza

2012-01-01

Large tracts of lowlands have been drained to expand extensive agriculture into areas that were historically categorized as wasteland. This expansion in agriculture necessarily coincided with changes in ecosystem structure, biodiversity, and nutrient cycling. These changes have impacted not only the landscapes in which they occurred, but also larger water bodies receiving runoff from drained land. New approaches must append current efforts toward land conservation and restoration, as the continuing impacts to receiving waters is an issue of major environmental concern. One of these approaches is agricultural drainage management. This article reviews how this approach differs from traditional conservation efforts, the specific practices of drainage management and the current state of knowledge on the ecology of drainage ditches. A bottom-up approach is utilized, examining the effects of stochastic hydrology and anthropogenic disturbance on primary production and diversity of primary producers, with special regard given to how management can affect establishment of macrophytes and how macrophytes in agricultural landscapes alter their environment in ways that can serve to mitigate non-point source pollution and promote biodiversity in receiving waters. PMID:24832519

The SEM description of interaction of a transient electromagnetic wave with an object

NASA Technical Reports Server (NTRS)

Pearson, L. W.; Wilton, D. R.

1980-01-01

The singularity expansion method (SEM), proposed as a means for determining and representing the transient surface current density induced on a scatterer by a transient electromagnetic wave is described. The resulting mathematical description of the transient surface current on the object is discussed. The data required to represent the electromagnetic scattering properties of a given object are examined. Experimental methods which were developed for the determination of the SEM description are discussed. The feasibility of characterizing the surface current induced on aircraft flying in proximity to a lightning stroke by way of SEM is examined.

A Few Examples of Spacecraft Anomalies Attributed to Transient Voltages and Currents Issues

NASA Technical Reports Server (NTRS)

Perez, Ray

2006-01-01

It is easy to address voltage and current transient related issues when the hardware in question or similar type of hardware is always available to you and when such issues are deterministic in nature. Unexpected or unforeseen transient related problems are not always a challenge but become a severe concern when a unique piece of the hardware, which developed the problem, is in space; as it is with all satellites. This paper addresses in a qualitative manner, a few examples of voltage and current events of transient origin which disabled space hardware.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Evaluating transient performance of servo mechanisms by analysing stator current of PMSM

NASA Astrophysics Data System (ADS)

Zhang, Qing; Tan, Luyao; Xu, Guanghua

2018-02-01

Smooth running and rapid response are the desired performance goals for the transient motions of servo mechanisms. Because of the uncertain and unobservable transient behaviour of servo mechanisms, it is difficult to evaluate their transient performance. Under the effects of electromechanical coupling, the stator current signals of a permanent-magnet synchronous motor (PMSM) potentially contain the performance information regarding servo mechanisms in use. In this paper, a novel method based on analysing the stator current of the PMSM is proposed for quantifying the transient performance. First, a vector control model is constructed to simulate the stator current behaviour in the transient processes of consecutive speed changes, consecutive load changes, and intermittent start-stops. It is discovered that the amplitude and frequency of the stator current are modulated by the transient load torque and motor speed, respectively. The stator currents under different performance conditions are also simulated and compared. Then, the stator current is processed using a local means decomposition (LMD) algorithm to extract the instantaneous amplitude and instantaneous frequency. The sample entropy of the instantaneous amplitude, which reflects the complexity of the load torque variation, is calculated as a performance indicator of smooth running. The peak-to-peak value of the instantaneous frequency, which defines the range of the motor speed variation, is set as a performance indicator of rapid response. The proposed method is applied to both simulated data in an intermittent start-stops process and experimental data measured for a batch of servo turrets for turning lathes. The results show that the performance evaluations agree with the actual performance.

Transient Performance Improvement Circuit (TPIC)s for DC-DC converter applications

NASA Astrophysics Data System (ADS)

Lim, Sungkeun

Gordon Moore famously predicted the exponential increase in transistor integration and computing power that has been witnessed in recent decades [1]. In the near future, it is expected that more than one billion transistors will be integrated per chip, and advanced microprocessors will require clock speeds in excess of several GHz. The increasing number of transistors and high clock speeds will necessitate the consumption of more power. By 2014, it is expected that the maximum power consumption of the microprocessor will reach approximately 150W, and the maximum load current will be around 150A. Today's trend in power and thermal management is to reduce supply voltage as low as possible to reduce delivered power. It is anticipated that the Intel cores will operate on 0.8V of supply voltage by 2014 [2]. A significant challenge in Voltage Regulator Module (VRM) development for next generation microprocessors is to regulate the supply voltage within a certain tolerance band during high slew rate load transitions, since the required supply voltage tolerance band will be much narrower than the current requirement. If VR output impedance is maintained at a constant value from DC to high frequency, large output voltage spikes can be avoided during load cur- rent transients. Based on this, the Adaptive Voltage Position (AVP) concept was developed to achieve constant VR output impedance to improve transient response performance [3]. However, the VR output impedance can not be made constant over the entire frequency range with AVP design, because the AVP design makes the VR output impedance constant only at low frequencies. To make the output impedance constant at high frequencies, many bulk capacitors and ceramic capacitors are required. The tight supply voltage tolerance for the next generation of microprocessors during high slew rate load transitions requires fast transient response power supplies. A VRM can not follow the high slew rate load current transients, because of the slow inductor current slew rate which is determined by the input voltage, output voltage, and the inductance. The remaining inductor current in the power delivery path will charge the output capacitors and develop a voltage across the ESR. As a result, large output voltage spikes occur during load current transients. Due to their limited control bandwidth, traditional VRs can not sufficiently respond rapidly to certain load transients. As a result, a large output voltage spike can occur during load transients, hence requiring a large amount of bulk capacitance to decouple the VR from the load [2]. If the remaining inductor current is removed from the power stage or the inductor current slew rate is changed, the output voltage spikes can be clamped, allowing the output capacitance to be reduced. A new design methodology for a Transient Performance Improvement Circuit(TPIC) based on controlling the output impedance of a regulator is presented. The TPIC works in parallel with a voltage regulator (VR)'s ceramic capacitors to achieve faster voltage regulation without the need for a large bulk capacitance, and can serve as a replacement for bulk capacitors. The specific function of the TPIC is to mimic the behavior of the bulk capacitance in a traditional VRM by sinking and sourcing large currents during transients, allowing the VR to respond quickly to current transients without the need for a large bulk capacitance. This will allow fast transient response without the need for a large bulk capacitor. The main challenge in applying the TPIC is creating a design which will not interfere with VR operation. A TPIC for a 4 Switch Buck-Boost (4SBB) converter is presented which functions by con- trolling the inductor current slew rate during load current transients. By increasing the inductor current slew rate, the remaining inductor current can be removed from the 4SBB power delivery path and the output voltage spike can be clamped. A second TPIC is presented which is designed to improve the performance of an LDO regulator during output current transients. A TPIC for a LDO regulator is proposed to reduce the over voltage spike settling time. During a load current step down transient, the only current discharging path is a light load current. However, it takes a long time to discharge the current charged in the output capacitors with the light load current. The proposed TPIC will make an additional current discharging path to reduce the long settling time. By reducing the settling time, the load current transient frequency of the LDO regulator can be increased. A Ripple Cancellation Circuit (RCC) is proposed to reduce the output voltage ripple. The RCC has a very similar concept with the TPIC which is sinking or injecting additional current to the power stage to compensate the inductor ripple current. The proposed TPICs and RCC have been implemented with a 0.6m CMOS process. A single-phase VR, a 4SBB converter, and a LDO regulator have been utilized with the proposed TPIC to evaluate its performance. The theoretical analysis will be confirmed by Cadence simulation results and experimental results.

Transient analysis for alternating over-current characteristics of HTSC power transmission cable

NASA Astrophysics Data System (ADS)

Lim, S. H.; Hwang, S. D.

2006-10-01

In this paper, the transient analysis for the alternating over-current distribution in case that the over-current was applied for a high-TC superconducting (HTSC) power transmission cable was performed. The transient analysis for the alternating over-current characteristics of HTSC power transmission cable with multi-layer is required to estimate the redistribution of the over-current between its conducting layers and to protect the cable system from the over-current in case that the quench in one or two layers of the HTSC power cable happens. For its transient analysis, the resistance generation of the conducting layers for the alternating over-current was reflected on its equivalent circuit, based on the resistance equation obtained by applying discrete Fourier transform (DFT) for the voltage and the current waveforms of the HTSC tape, which comprises each layer of the HTSC power transmission cable. It was confirmed through the numerical analysis on its equivalent circuit that after the current redistribution from the outermost layer into the inner layers first happened, the fast current redistribution between the inner layers developed as the amplitude of the alternating over-current increased.

Environmental Impact Analysis Process. Environmental Impact Statement for the Closure of Pease Air Force Base. Volume 1

DTIC Science & Technology

1990-05-01

initially known as Portsmouth AFB. In 1957, it was rededicated as Pease AFB in honor of Captain Harl Pease, Jr., a native of Plymouth , Now Hampshire. During... barren soil, up-gradient from storm drains, or in close proximity of floor drains. Corrective action currently being taken is the prompt disposal of...Plant communities on base are indicative of the pine / northern hardwood ecosystem.. The forest resources of. Pease AFB are substantial. More than one

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

PubMed

Matsui, Eriko; Harnack, Oliver; Matsuzawa, Nobuyuki N; Yasuda, Akio

2005-10-01

A conjugated polymer/metal ion/liquid-crystal molecular system was set between source and drain electrodes with a 100 nm gap. When gate voltage (Vg) increases, the current between source and drain electrodes increases. Infrared spectra show this system to be composed of pi and sigma complexes. At Vg = 0, the pi complex dominates the sigma complex, whereas the sigma complex becomes dominant when Vg is switched on. Calculations found that the pi complex has lower conductivity than the sigma complex.

Suspended sediment yield of New Jersey coastal plain streams draining into the Delaware estuary

USGS Publications Warehouse

Mansue, Lawrence J.

1972-01-01

The purpose of this report is to summarize sediment data collected at selected stream-sampling sites in southern New Jersey. Computations of excepted average annual yields at each sampling site were made and utilized to estimate the annual yield at ungaged sites. Similar data currently are being compiled for streams draining Pennsylvania and Delaware. It is planned to report on the combined information at a later date in the Geological Survey's Water-Supply Paper series.

Behavioural changes in three species of freshwater macroinvertebrates exposed to the pyrethroid lambda-cyhalothrin: laboratory and stream microcosm studies.

PubMed

Nørum, Ulrik; Friberg, Nikolai; Jensen, Maria R; Pedersen, Jakob M; Bjerregaard, Poul

2010-07-15

Pesticides are transported from crop fields to adjacent streams via surface run-off, drains, groundwater, wind drift and atmospheric deposition and give rise to transient pulse contamination. Although the concentrations observed, typically <10 microg L(-1), cannot be expected to be acutely lethal, effects in streams at the population and ecosystem level have been reported. One of the most conspicuous phenomena associated with these transient pesticide pulses is drift, where large numbers of freshwater invertebrates are carried along by the current and disappear from the contaminated stretch of the stream. The aim of the present study was to evaluate the feasibility of linking laboratory studies of the sublethal effects of pulse exposure to the pyrethroid lambda-cyhalothrin on the locomotory behaviour of stream invertebrates with effects on drift behaviour under more environmentally realistic conditions in stream microcosms. In the laboratory as well as in the microcosms, the order of sensitivities of the three species tested was (with Leuctra nigra being the most sensitive): L. nigra>Gammarus pulex>Heptagenia sulphurea. The LOECs determined for L. nigra (1 ng L(-1)), G. pulex (10 ng L(-1)) and H. sulphurea (100 ng L(-1)) are all within expected environmental concentrations. For the species of invertebrates investigated, it was possible to extrapolate directly from pyrethroid-induced behavioural changes observed in the laboratory to drift under more realistic conditions in stream microcosms. Consequently, the fast and cost-effective video tracking methodology may be applied for screening for potential effects of a wider range of pesticides and other stressors on the locomotory behaviour of freshwater invertebrates. The results indicate that such behavioural changes may be predictive of effects at the ecosystem level. Copyright (c) 2010 Elsevier B.V. All rights reserved.

High work function materials for source/drain contacts in printed polymer thin film transistors

NASA Astrophysics Data System (ADS)

Sholin, V.; Carter, S. A.; Street, R. A.; Arias, A. C.

2008-02-01

Studies of materials for source-drain electrodes in ink-jet printed polymer-based thin film transistors (TFTs) are reported. Two systems are studied: a blend of Ag nanoparticles with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and an ethylene glycol-doped PEDOT:PSS solution (modified-PEDOT). The semiconductor used is the polythiophene derivative poly [5,5'-bis(3-dodecyl-2-thienyl)-2,2,2'-bithiophene]. PEDOT:Ag blends and modified-PEDOT yield TFTs with mobilities around 10-2 and 10-3cm2/Vs, respectively, subthreshold slopes around 1.6V/decade and on-to-off current ratios of 106-107. Both systems show considerable improvement over printed TFTs with Ag nanoparticle source-drain electrodes. Results on film resistivity and morphology are discussed along with device characteristic analysis.

Adjuvant effect of short chain triacylglycerol tributyrin on a mouse contact hypersensitivity model.

PubMed

Sekiguchi, Kota; Ogawa, Erina; Kurohane, Kohta; Konishi, Hideyuki; Mochizuki, Narumi; Manabe, Kei; Imai, Yasuyuki

2018-03-01

Little attention has been paid to chemicals that can enhance hypersensitivity caused by other chemicals. We have demonstrated that phthalate esters with short chain alcohols enhance fluorescein isothiocyanate (FITC)-induced contact hypersensitivity (CHS) in a mouse model. Furthermore, phthalate esters with such an enhancing effect were found to activate transient receptor potential ankyrin 1 (TRPA1) cation channels, which are expressed on a part of sensory neurons, using a TRPA1-expressing cell line. In this study, we examined these activities of esters comprising glycerol and a short chain fatty acid, i.e. dibutyrin and tributyrin. We carried out chemical synthesis of dibutyrin isomers. Each dibutyrin isomer weakly activated TRPA1 and slightly enhanced skin sensitization to FITC. Unexpectedly, TRPA1 activation and enhancement of FITC-CHS were much more evident in the presence of tributyrin. Mechanistically, tributyrin induced increased dendritic cell trafficking from the skin to draining lymph nodes. Tributyrin enhanced interferon-γ (IFN-γ) production by draining lymph nodes, while its effect on interleukin-4 (IL-4) production was relatively less prominent. These results suggested that tributyrin concomitantly caused TRPA1 activation and an adjuvant effect on FITC-CHS. Copyright © 2017 Elsevier B.V. All rights reserved.

Glutathionylation-Dependence of Na+-K+-Pump Currents Can Mimic Reduced Subsarcolemmal Na+ Diffusion

PubMed Central

Garcia, Alvaro; Liu, Chia-Chi; Cornelius, Flemming; Clarke, Ronald J.; Rasmussen, Helge H.

2016-01-01

The existence of a subsarcolemmal space with restricted diffusion for Na+ in cardiac myocytes has been inferred from a transient peak electrogenic Na+-K+ pump current beyond steady state on reexposure of myocytes to K+ after a period of exposure to K+-free extracellular solution. The transient peak current is attributed to enhanced electrogenic pumping of Na+ that accumulated in the diffusion-restricted space during pump inhibition in K+-free extracellular solution. However, there are no known physical barriers that account for such restricted Na+ diffusion, and we examined if changes of activity of the Na+-K+ pump itself cause the transient peak current. Reexposure to K+ reproduced a transient current beyond steady state in voltage-clamped ventricular myocytes as reported by others. Persistence of it when the Na+ concentration in patch pipette solutions perfusing the intracellular compartment was high and elimination of it with K+-free pipette solution could not be reconciled with restricted subsarcolemmal Na+ diffusion. The pattern of the transient current early after pump activation was dependent on transmembrane Na+- and K+ concentration gradients suggesting the currents were related to the conformational poise imposed on the pump. We examined if the currents might be accounted for by changes in glutathionylation of the β1 Na+-K+ pump subunit, a reversible oxidative modification that inhibits the pump. Susceptibility of the β1 subunit to glutathionylation depends on the conformational poise of the Na+-K+ pump, and glutathionylation with the pump stabilized in conformations equivalent to those expected to be imposed on voltage-clamped myocytes supported this hypothesis. So did elimination of the transient K+-induced peak Na+-K+ pump current when we included glutaredoxin 1 in patch pipette solutions to reverse glutathionylation. We conclude that transient K+-induced peak Na+-K+ pump current reflects the effect of conformation-dependent β1 pump subunit glutathionylation, not restricted subsarcolemmal diffusion of Na+. PMID:26958887

Glutathionylation-Dependence of Na(+)-K(+)-Pump Currents Can Mimic Reduced Subsarcolemmal Na(+) Diffusion.

PubMed

Garcia, Alvaro; Liu, Chia-Chi; Cornelius, Flemming; Clarke, Ronald J; Rasmussen, Helge H

2016-03-08

The existence of a subsarcolemmal space with restricted diffusion for Na(+) in cardiac myocytes has been inferred from a transient peak electrogenic Na(+)-K(+) pump current beyond steady state on reexposure of myocytes to K(+) after a period of exposure to K(+)-free extracellular solution. The transient peak current is attributed to enhanced electrogenic pumping of Na(+) that accumulated in the diffusion-restricted space during pump inhibition in K(+)-free extracellular solution. However, there are no known physical barriers that account for such restricted Na(+) diffusion, and we examined if changes of activity of the Na(+)-K(+) pump itself cause the transient peak current. Reexposure to K(+) reproduced a transient current beyond steady state in voltage-clamped ventricular myocytes as reported by others. Persistence of it when the Na(+) concentration in patch pipette solutions perfusing the intracellular compartment was high and elimination of it with K(+)-free pipette solution could not be reconciled with restricted subsarcolemmal Na(+) diffusion. The pattern of the transient current early after pump activation was dependent on transmembrane Na(+)- and K(+) concentration gradients suggesting the currents were related to the conformational poise imposed on the pump. We examined if the currents might be accounted for by changes in glutathionylation of the β1 Na(+)-K(+) pump subunit, a reversible oxidative modification that inhibits the pump. Susceptibility of the β1 subunit to glutathionylation depends on the conformational poise of the Na(+)-K(+) pump, and glutathionylation with the pump stabilized in conformations equivalent to those expected to be imposed on voltage-clamped myocytes supported this hypothesis. So did elimination of the transient K(+)-induced peak Na(+)-K(+) pump current when we included glutaredoxin 1 in patch pipette solutions to reverse glutathionylation. We conclude that transient K(+)-induced peak Na(+)-K(+) pump current reflects the effect of conformation-dependent β1 pump subunit glutathionylation, not restricted subsarcolemmal diffusion of Na(+). Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Modelling short channel mosfets for use in VLSI

NASA Technical Reports Server (NTRS)

Klafter, Alex; Pilorz, Stuart; Polosa, Rosa Loguercio; Ruddock, Guy; Smith, Andrew

1986-01-01

In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.

Analytic drain current model for III-V cylindrical nanowire transistors

NASA Astrophysics Data System (ADS)

Marin, E. G.; Ruiz, F. G.; Schmidt, V.; Godoy, A.; Riel, H.; Gámiz, F.

2015-07-01

An analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schrödinger equations for the Γ-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order -1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 1013eV-1cm-2 .

Sulfur as a surface passivation for InP

NASA Technical Reports Server (NTRS)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Design and simulation of a novel 1400 V-4000 V enhancement mode buried gate GaN HEMT for power applications

NASA Astrophysics Data System (ADS)

Faramehr, Soroush; Kalna, Karol; Igić, Petar

2014-11-01

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V-4000 V for a source-to-drain spacing (LSD) of 6 μm-32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance RS for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm2 and 3.5 mΩ · cm2, respectively. Further improvement up to BV = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of RS = 35.5 mΩ · cm2. The leakage current in the proposed devices stays in the range of ˜5 × 10-9 mA mm-1.

Wavelength dependence and multiple-induced states in photoresponses of copper phthalocyanine-doped gold nanoparticle single-electron device

NASA Astrophysics Data System (ADS)

Yamamoto, Makoto; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji; Ishii, Hisao; Noguchi, Yutaka

2014-01-01

We have proposed a gold nanoparticle (GNP)-based single-electron transistor (SET) doped with a dye molecule, where the molecule works as a photoresponsive floating gate. Here, we examined the source-drain current (I_{\\text{SD}}) at a constant drain voltage under light irradiation with various wavelengths ranging from 400 to 700 nm. Current change was enhanced at the wavelengths of 600 and 700 nm, corresponding to the optical absorption band of the doped molecule (copper phthalocyanine: CuPc). Moreover, several peaks appear in the histograms of I_{\\text{SD}} during light irradiation, indicating that multiple discrete states were induced in the device. The results suggest that the current change was initiated by the light absorption of CuPc and multiple CuPc molecules near the GNP working as a floating gate. Molecular doping can activate advanced device functions in GNP-based SETs.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Shallow Groundwater Discharge into Urban Drains: Identifying the Missing Link to Define Urban Typologies for Impact Assessment of Urbanization on Water and Nutrient Balances

NASA Astrophysics Data System (ADS)

Ocampo, C. J.; Oldham, C. E.

2015-12-01

Groundwater and surface water (GW-SW) interaction in drains of many sandy coastal plain areas displays an ephemeral hydrological regime, as often shifts occur in their hydraulic functioning from a losing to a gaining water conditions upon the position of the surrounding shallow water table (SWT). Urbanization in such areas and stormwater management strategies enhancing infiltration have the potential to alter the infiltration rates and the subsurface water storage dynamics with consequences for the residence time of the water and nutrient transformations prior their discharge into receiving SW drains. Identifying first order control on the above processes will assist the improvement of assessment tools for better urban development. This work presents findings on the hydrodynamics of the GW-SW water exchange in two drains of the Perth Coastal Plain area (Western Australia, Australia) impacted by a SWT developing on a layered variable texture soil: a peri-urban drain and a restored living stream drain in urban residential area. A multi-technique approach was used to investigate water mass balance and fluxes over a reach scale and involved continuous records of hydrometric data for GW-SW interactions, passive tracers for water pathway identification, pore water temperature for vertical water exchange, and differential SW discharge using an Acoustic Doppler Current Profiler. Results highlighted differences in the GW-SW interactions between both drains under stormflow and baseflow conditions. A substantial increase of GW discharge into the drain coincided with the full development of a SWT over a seasonal scale at the peri-urban drain, which suggests a more natural water infiltration and redistribution in the subsurface. In contrast, a large volume of infiltrated rain water was discharged into the living stream over a period of few weeks regardless of the development of the surrounding SWT, which suggests the influence of underground pipe system in water redistribution. The results contributed to identify key physical parameters to define urban typologies, quantify the subsurface storage discharge and residence time, and finally assess the transport and transformations of nutrients using a generalised Damköhler number. Future work will populate the framework with other study cases.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Lightning induced currents in aircraft wiring using low level injection techniques

NASA Technical Reports Server (NTRS)

Stevens, E. G.; Jordan, D. T.

1991-01-01

Various techniques were studied to predict the transient current induced into aircraft wiring bundles as a result of an aircraft lightning strike. A series of aircraft measurements were carried out together with a theoretical analysis using computer modeling. These tests were applied to various aircraft and also to specially constructed cylinders installed within coaxial return conductor systems. Low level swept frequency CW (carrier waves), low level transient and high level transient injection tests were applied to the aircraft and cylinders. Measurements were made to determine the transfer function between the aircraft drive current and the resulting skin currents and currents induced on the internal wiring. The full threat lightning induced transient currents were extrapolated from the low level data using Fourier transform techniques. The aircraft and cylinders used were constructed from both metallic and CFC (carbon fiber composite) materials. The results show the pulse stretching phenomenon which occurs for CFC materials due to the diffusion of the lightning current through carbon fiber materials. Transmission Line Matrix modeling techniques were used to compare theoretical and measured currents.

Thermal analysis of a planetary transmission with spherical roller bearings operating after complete loss of oil

NASA Technical Reports Server (NTRS)

Coe, H. H.

1984-01-01

Planetsys and Spherbean, two computer programs developed for the analysis of rolling element bearings, were used to simulate the thermal performance of an OH-58 helicopter main rotor transmission. A steady state and a transient thermal analysis were made and temperatures thus calculated were compared with experimental data obtained from a transmission that was operated to destruction, which occurred about 30 min after all the oil was drained from the transmission. Temperatures predicted by Spherbean were within 3% of the corresponding measured values at 15 min elapsed time and within 9% at 25 min. Spherbean also indicates a potential for high bearing cage temperatures with misalignment and outer ring rotation.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

NASA Astrophysics Data System (ADS)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Toward refined environmental scenarios for ecological risk assessment of down-the-drain chemicals in freshwater environments.

PubMed

Franco, Antonio; Price, Oliver R; Marshall, Stuart; Jolliet, Olivier; Van den Brink, Paul J; Rico, Andreu; Focks, Andreas; De Laender, Frederik; Ashauer, Roman

2017-03-01

Current regulatory practice for chemical risk assessment suffers from the lack of realism in conventional frameworks. Despite significant advances in exposure and ecological effect modeling, the implementation of novel approaches as high-tier options for prospective regulatory risk assessment remains limited, particularly among general chemicals such as down-the-drain ingredients. While reviewing the current state of the art in environmental exposure and ecological effect modeling, we propose a scenario-based framework that enables a better integration of exposure and effect assessments in a tiered approach. Global- to catchment-scale spatially explicit exposure models can be used to identify areas of higher exposure and to generate ecologically relevant exposure information for input into effect models. Numerous examples of mechanistic ecological effect models demonstrate that it is technically feasible to extrapolate from individual-level effects to effects at higher levels of biological organization and from laboratory to environmental conditions. However, the data required to parameterize effect models that can embrace the complexity of ecosystems are large and require a targeted approach. Experimental efforts should, therefore, focus on vulnerable species and/or traits and ecological conditions of relevance. We outline key research needs to address the challenges that currently hinder the practical application of advanced model-based approaches to risk assessment of down-the-drain chemicals. Integr Environ Assess Manag 2017;13:233-248. © 2016 SETAC. © 2016 SETAC.

Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kano, Shinya; CREST, Japan Science and Technology Agency, Yokohama 226-8503; Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE

2013-12-14

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped chargesmore » on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.« less

An improved model to predict bandwidth enhancement in an inductively tuned common source amplifier.

PubMed

Reza, Ashif; Misra, Anuraag; Das, Parnika

2016-05-01

This paper presents an improved model for the prediction of bandwidth enhancement factor (BWEF) in an inductively tuned common source amplifier. In this model, we have included the effect of drain-source channel resistance of field effect transistor along with load inductance and output capacitance on BWEF of the amplifier. A frequency domain analysis of the model is performed and a closed-form expression is derived for BWEF of the amplifier. A prototype common source amplifier is designed and tested. The BWEF of amplifier is obtained from the measured frequency response as a function of drain current and load inductance. In the present work, we have clearly demonstrated that inclusion of drain-source channel resistance in the proposed model helps to estimate the BWEF, which is accurate to less than 5% as compared to the measured results.

Conjunctival oedema as a potential objective sign of intracranial hypertension: a short illustrated review and three case reports.

PubMed

Toalster, Nicholas; Jeffree, Rosalind L

2013-11-01

Periorbital and conjunctival oedema has been reported anecdotally by patients with raised intracranial pressure states. We present three clinical cases of this phenomenon and discuss the current evidence for pathways by which cerebrospinal fluid (CSF) drains in relation to conjunctival oedema. We reviewed the available literature using PubMed, in regards to conjunctival oedema as it relates to intracranial hypertension, and present the clinical history, radiology and orbital photographs of three cases we have observed. Only one previous publication has linked raised intracranial pressure (ICP) to conjuctival oedema. The weight of evidence supports the observation that the majority of CSF drains along the cranial nerves as opposed to via the arachnoid projections. Conjunctival oedema may be a clinical manifestation of CSF draining via the optic nerve in elevated ICP states.

Two-Dimensional Quantum Model of a Nanotransistor

NASA Technical Reports Server (NTRS)

Govindan, T. R.; Biegel, B.; Svizhenko, A.; Anantram, M. P.

2009-01-01

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

NASA Astrophysics Data System (ADS)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

A programmable point-of-care device for external CSF drainage and monitoring.

PubMed

Simkins, Jeffrey R; Subbian, Vignesh; Beyette, Fred R

2014-01-01

This paper presents a prototype of a programmable cerebrospinal fluid (CSF) external drainage system that can accurately measure the dispensed fluid volume. It is based on using a miniature spectrophotometer to collect color data to inform drain rate and pressure monitoring. The prototype was machined with 1 μm dimensional accuracy. The current device can reliably monitor the total accumulated fluid volume, the drain rate, the programmed pressure, and the pressure read from the sensor. Device requirements, fabrication processes, and preliminary results with an experimental set-up are also presented.

Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2017-02-01

This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Charge-based MOSFET model based on the Hermite interpolation polynomial

NASA Astrophysics Data System (ADS)

Colalongo, Luigi; Richelli, Anna; Kovacs, Zsolt

2017-04-01

An accurate charge-based compact MOSFET model is developed using the third order Hermite interpolation polynomial to approximate the relation between surface potential and inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced charge-based compact MOSFET models such as BSIM, ACM and EKV, but it is developed without requiring the crude linearization of the inversion charge. Hence, the asymmetry and the non-linearity in the channel are accurately accounted for. Nevertheless, the expression of the drain current can be worked out to be analytically equivalent to BSIM, ACM and EKV. Furthermore, thanks to this new mathematical approach the slope factor is rigorously defined in all regions of operation and no empirical assumption is required.

Linear increases in carbon nanotube density through multiple transfer technique.

PubMed

Shulaker, Max M; Wei, Hai; Patil, Nishant; Provine, J; Chen, Hong-Yu; Wong, H-S P; Mitra, Subhasish

2011-05-11

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/μm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 μA/μm.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Investigations of an Environmentally Induced Long Duration Hall Thruster Start Transient (PREPRINT)

DTIC Science & Technology

2006-02-06

Hall thruster start transient is produced by exposure of the thruster to ambient laboratory atmosphere. This behavior was first observed during operation of a cluster of four 200 W BHT-200 Hall effect thrusters where large anode discharge fluctuations, visible as increased anode current and a diffuse plume structure, occurred in an apparently random manner. During operation of a single thruster, the start transient appears as a quickly rising and later smoothly decaying elevated anode current with a diffuse plume that persists for less than 500 seconds. The start transient

Climate and Tectonics Need Not Apply: Transient Erosion Driven by Drainage Integration, Aravaipa Creek, AZ

NASA Astrophysics Data System (ADS)

Jungers, M.; Heimsath, A. M.

2013-12-01

Periods of transient erosion during landscape evolution are most commonly attributed to fluvial systems' responses to changes in tectonic or climatic forcing. Dramatic changes in base level and sudden increases in drainage area associated with drainage reorganization can, however, drive punctuated events of incision and erosion equal in magnitude to those driven by tectonics or climate. In southeastern Arizona's Basin and Range, a mature portion of the North American physiographic province, the modern Gila River system integrates a network of previously internally drained structural basins. One basin in particular, Aravaipa Creek, is the most recent to join the broader Gila River fluvial network. Following drainage integration, Aravaipa Creek rapidly incised to equilibrate with its new, much lower, base level. In doing so, it carved Aravaipa Canyon, excavated a large volume of sedimentary basin fill, and captured drainage area from the still internally drained Sulphur Springs basin. Importantly, this dramatic episode of transient incision and erosion was the result of drainage integration alone. We hypothesize that the adjustment time for Aravaipa Creek was shorter than the timescale of any climate forcing, and regional extensional tectonics were quiescent at the time of integration. We can, therefore, explicitly quantify the magnitude of transient incision and erosion driven by drainage reorganization. We use remnants of the paleo-basin surface and modern landscape elevations to reconstruct the pre-drainage integration topography of Aravaipa Creek basin. Doing so enables us to quantify the magnitude of incision driven by drainage reorganization as well as the volume of material eroded from the basin subsequent to integration. Key control points for our landscape reconstruction are: (1) the inferred elevation of the spillover point between Aravaipa Creek and the San Pedro River; (2) Quaternary pediment-capping gravels above Aravaipa Canyon (3) perched remnants of late stage sedimentary basin fill that preserve the slope of the pre-incision piedmonts of the Galiuro Mountains and Santa Teresa Mountains; and (4) the paleo-drainage divide between Aravaipa Creek and Sulphur Springs Valley, approximately 6 km northwest of the modern divide. The pre-incision basin surface sloped from the Sulphur Springs divide (1370 m) to its intersection with the point of integration (1100 m) between Aravaipa Creek and the San Pedro River, 50 km to the northwest. Maximum incision of 450 m occurred in the vicinity of Aravaipa Canyon, and more than 50 cubic kilometers of material have been eroded from Aravaipa Creek basin. Finally, cosmogenic nuclide burial dates for latest stage sedimentary basin fill enable us to constrain the timing of drainage integration and place first-order constraints on paleo-erosion rates.

Upland and in-stream controls on baseflow nutrient dynamics in tile-drained agroecosystem watersheds

NASA Astrophysics Data System (ADS)

Ford, William I.; King, Kevin; Williams, Mark R.

2018-01-01

In landscapes with low residence times (e.g., rivers and reservoirs), baseflow nutrient concentration dynamics during sensitive timeframes can contribute to deleterious environmental conditions downstream. This study assessed upland and in-stream controls on baseflow nutrient concentrations in a low-gradient, tile-drained agroecosystem watershed. We conducted time-series analysis using Empirical mode decomposition of seven decade-long nutrient concentration time-series in the agricultural Upper Big Walnut Creek watershed (Ohio, USA). Four tributaries of varying drainage areas and three main-stem sites were monitored, and nutrient grab samples were collected weekly from 2006 to 2016 and analyzed for dissolved reactive phosphorus (DRP), nitrate-nitrogen (NO3-N), total nitrogen (TN), and total phosphorus (TP). Statistically significant seasonal fluctuations were compared with seasonality of baseflow, watershed characteristics (e.g., tile-drain density), and in-stream water quality parameters (pH, DO, temperature). Findings point to statistically significant seasonality of all parameters with peak P concentrations in summer and peak N in late winter-early spring. Results suggest that upland processes exert strong control on DRP concentrations in the winter and spring months, while coupled upland and in-stream conditions control watershed baseflow DRP concentrations during summer and early fall. Conversely, upland flow sources driving streamflow exert strong control on baseflow NO3-N, and in-stream attenuation through transient and permanent pathways impacts the magnitude of removal. Regarding TN and TP, we found that TN was governed by NO3-N, while TP was governed by DRP in summer and fluvial erosion of P-rich benthic sediments during higher baseflow conditions. Findings of the study highlight the importance of coupled in-stream and upland management for mitigating eutrophic conditions during environmentally sensitive timeframes.

The effect of localized injection of adjuvant material on the draining lymph node

PubMed Central

Taub, R. N.; Krantz, Adrienne R.; Dresser, D. W.

1970-01-01

The histological accompaniments of adjuvant activity were studied in popliteal nodes of CBA mice at various intervals after footpad injection. Substances tested possessed either extrinsic adjuvanticity but little or no antigenicity (alum, vitamin A alcohol), antigenicity but no extrinsic adjuvanticity (bovine γA-like globulin), both (Freund's complete adjuvant, killed B. pertussis organisms, alum-precipitated BGG), or neither (paraffin oil BP). Substances possessing extrinsic adjuvanticity produced marked persistent enlargement of the draining lymph node, with prominent expansion, hypercellularity and blast transformation in the paracortical areas by the 4th day after injection. This was followed by germinal centre formation and medullary plasmacytosis occurring between the 4th and 10th day. Substances possessing little or no antigenicity produced a feeble germinal centre response and minimal medullary expansion. Bovine γA-like globulin, which lacks extrinsic adjuvanticity, produced a prominent germinal centre and medullary response but a minimal paracortical response. Only mild, transient lymph node enlargement, lasting 1–2 days, was seen after paraffin oil BP. Passive immunization of CBA mice with CBA anti-pertussis hyperimmune serum inhibited the adjuvant action of pertussis, and diminished and delayed the histological changes in the draining lymph node. These data suggested that paracortical expansion and hyperplasia were characteristic histological accompaniments to the injection of substances with extrinsic adjuvanticity. Because paracortical hypercellularity was observed in some instances to precede blast cell transformation, it is suggested that paracortical expansion induced by adjuvants is partly due to an augmented cellular traffic, with a net flux of recirculating lymphocytes into these areas. ImagesFIG. 1FIG. 2FIG. 5FIG. 6FIG. 8FIG. 10FIG. 11 PMID:4190416

Drained peatlands used for extraction and agriculture: biogeochemical status with special attention to greenhouse gas fluxes and rewetting

NASA Astrophysics Data System (ADS)

Sirin, Andrey; Chistotin, Maxim; Suvorov, Gennady; Glagolev, Mikhail; Kravchenko, Irina; Minaeva, Tatiana

2010-05-01

Many peatlands previously drained for peat extraction or utilized for agriculture (directly or after partial cutoff) are left abandoned during last decades in Europe, and especially in its eastern part. In the European part of Russia alone, several million hectares of peatlands have been modified for peat extraction and agriculture by direct water level draw-down and nowadays are not under use by economic reasons. This makes up one of the most serious and urgent problems of wise use and management of peatlands in these regions with serious feedback to people, environment and economy (Quick Scan of Peatlands in Central and Eastern Europe, 2009). Drainage for agriculture leads to peat oxidation resulting in substantial emissions of greenhouse gases (carbon dioxide and sometimes nitrous oxide) to the atmosphere. Together with peat fires this is the most significant negative input of peatland degradation to climate change (Assessment on Peatlands Biodiversity and Climate Change, 2008; Peatlands and Climate Change, 2008). Besides that, dehydrated peatlands often release methane. Starting from 2003, the effect of drainage and subsequent utilization of peatlands on the emissions of carbon dioxide and methane was studied in Tomsk region (West Siberia) during the summer-fall periods (Glagolev et al. 2008). The measurements were conducted by chamber method at peatlands drained for use as croplands (now partly being fallows) and peat cutting (currently abandoned or reclaimed for forest planting, haying, or pasturing), as well as at a wide range of undrained oligotrophic, mesotrophic, and eutrophic mires and burnt mire areas of different regeneration stages. The statistical analysis of data from a large number of study sites indicated a higher release of carbon dioxide from disturbed peatlands compared to undrained ones. At the same time some drained peatlands had considerable methane emission rates, additionally enhanced by the intensive efflux from the surface of drainage ditches. The findings were supported by the studies conducted from 2005 at drained peatland sites in Moscow region (European part of Russia) which are used for peat extraction or as hayfield (Chistotin et al., 2006). Unexpected transient methane fluxes were observed at the inter-ditch surfaces in two types of sites: milled peat extraction area and used as a hay field after partial peat extraction. Under warm and wet conditions methane was released even from peat stockpiles. Microbiological studies showed not lower and near to twice higher genomic diversity of methanogens in extracted sites and in a hayfield as compared to virgin mire. We suppose that well-developed plant roots at the grassland provide a source of fresh organic material used for CH4 production. To test this hypothesis, a pot experiment with mesocosms which model three succession stages (bare peat, grass sowing, and developed grassland) under permanently high or fluctuating wetness was conducted. Methane efflux from peat under developed grassland was higher as compared to the other treatments. Under permanently high water supply the methane emission was 1 to 2 orders of magnitude higher. The obtained results clearly showed that plant organic matter can be an additional source of methane after rewetting which is obviously needed for abandoned peatland sites not used for agriculture any more. To mitigate the emissions, such management options as removal of the surface peat layer before rewetting could be applied. This practice could have additional benefits achieved by bringing day surface closer to ground water table level and forming more favorable soil conditions for mire species.

Transport properties of triarylamine based dendrimers studied by space charge limited current transients

NASA Astrophysics Data System (ADS)

Szymanski, Marek Z.; Kulszewicz-Bajer, Irena; Faure-Vincent, Jérôme; Djurado, David

2012-08-01

We have studied hole transport in triarylamine based dendrimer using space-charge-limited current transient technique. A mobility of 8 × 10-6 cm2/(V s) and a characteristic detrapping time of about 100 ms have been obtained. We found that quasi-ohmic contact is formed with gold. The obtained mobility differs from the apparent one given by the analysis of stationary current-voltage characteristics because of a limited contact efficiency. The comparison between transients obtained from fresh and aged samples reveals no change in mobility with aging. The deterioration of electrical properties is exclusively caused by trap formation and accumulation of ionic conducting impurities. Finally, repeated transient measurements have been applied to analyze the dynamics of charge trapping process.

Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

NASA Astrophysics Data System (ADS)

Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

2013-05-01

Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

Numerical simulation of groundwater movement and managed aquifer recharge from Sand Hollow Reservoir, Hurricane Bench area, Washington County, Utah

USGS Publications Warehouse

Marston, Thomas M.; Heilweil, Victor M.

2012-01-01

The Hurricane Bench area of Washington County, Utah, is a 70 square-mile area extending south from the Virgin River and encompassing Sand Hollow basin. Sand Hollow Reservoir, located on Hurricane Bench, was completed in March 2002 and is operated primarily as a managed aquifer recharge project by the Washington County Water Conservancy District. The reservoir is situated on a thick sequence of the Navajo Sandstone and Kayenta Formation. Total recharge to the underlying Navajo aquifer from the reservoir was about 86,000 acre-feet from 2002 to 2009. Natural recharge as infiltration of precipitation was approximately 2,100 acre-feet per year for the same period. Discharge occurs as seepage to the Virgin River, municipal and irrigation well withdrawals, and seepage to drains at the base of reservoir dams. Within the Hurricane Bench area, unconfined groundwater-flow conditions generally exist throughout the Navajo Sandstone. Navajo Sandstone hydraulic-conductivity values from regional aquifer testing range from 0.8 to 32 feet per day. The large variability in hydraulic conductivity is attributed to bedrock fractures that trend north-northeast across the study area.A numerical groundwater-flow model was developed to simulate groundwater movement in the Hurricane Bench area and to simulate the movement of managed aquifer recharge from Sand Hollow Reservoir through the groundwater system. The model was calibrated to combined steady- and transient-state conditions. The steady-state portion of the simulation was developed and calibrated by using hydrologic data that represented average conditions for 1975. The transient-state portion of the simulation was developed and calibrated by using hydrologic data collected from 1976 to 2009. Areally, the model grid was 98 rows by 76 columns with a variable cell size ranging from about 1.5 to 25 acres. Smaller cells were used to represent the reservoir to accurately simulate the reservoir bathymetry and nearby monitoring wells; larger cells were used in the northern and southern portions of the model where water-level data were limited. Vertically, the aquifer system was divided into 10 layers, which incorporated the Navajo Sandstone and Kayenta Formation. The model simulated recharge to the groundwater system as natural infiltration of precipitation and as infiltration of managed aquifer recharge from Sand Hollow Reservoir. Groundwater discharge was simulated as well withdrawals, shallow drains at the base of reservoir dams, and seepage to the Virgin River. During calibration, variables were adjusted within probable ranges to minimize differences among model-simulated and observed water levels, groundwater travel times, drain discharges, and monthly estimated reservoir recharge.

Magnetic thin-film split-domain current sensor-recorder

DOEpatents

Hsieh, Edmund J.

1979-01-01

A sensor-recorder for recording a representation of the direction and peak amplitude of a transient current. A magnetic thin film is coated on a glass substrate under the influence of a magnetic field so that the finished film is magnetically uniaxial and anisotropic. The film is split into two oppositely magnetized contiguous domains with a central boundary by subjecting adjacent portions of the film simultaneously to magnetic fields that are opposed 180.degree.. With the split-domain sensor-recorder placed with the film plane and domain boundary either perpendicular or parallel to the expected conductive path of a transient current, the occurrence of the transient causes switching of a portion of one domain to the direction of the other domain. The amount of the switched domain portion is indicative of the amplitude of the peak current of the transient, while the particular domain that is switched is indicative of the direction of the current. The resulting domain patterns may be read with a passive magnetic tape viewer.

A universal procedure for evaluation and application of surge-protective devices

NASA Technical Reports Server (NTRS)

1980-01-01

The source, nature, and frequency of occurrence of transients must be identified and a representative standard test wave chosen for proof testing. The performance of candidate suppressor devices then can be evaluated against the withstand goals set for the equipment. The various suppressors divide into two classes of generic behavior. The key to a universal procedure for evaluating both classes lies in representing transients as quasi-current sources of defined current impulse duration. The available surge current is established by the Thevenin equivalent transient voltage and source impedance. A load line drawn on the V-I characteristic graph of the suppressor quickly determines the clamping voltage and peak current. These values then can be compared to the requirement. The deposited energy and average power dissipation for multiple transients also can be calculated. The method is illustrated with a design example for motor vehicle alternator load dump suppression.

Physicians' brain drain in Greece: a perspective on the reasons why and how to address it.

PubMed

Ifanti, Amalia A; Argyriou, Andreas A; Kalofonou, Foteini H; Kalofonos, Haralabos P

2014-08-01

This review study explores the "brain drain" currently evident amongst physicians in Greece, which is closely linked to the country's severe financial woes. In particular, it shows that the Greek healthcare labour market offers few opportunities and thus physicians are forsaking their homeland to seek jobs abroad. The main causes generating or greatly inflating the brain drain of Greek physicians are unemployment, job insecurity, income reduction, over-taxation, together with limited budgets for research institutes. It is argued that, to stop the evolving mass exodus of skilled medical staff, policy-makers should implement fiscal and human-centred approaches, thoroughly safeguarding both the right of skilled Greek physicians to work in their homeland with motivation and dignity, but also of Greek citizens to continue receiving high-quality healthcare by skilled physicians at times when this is mostly needed. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Mitigating wildfire carbon loss in managed northern peatlands through restoration.

PubMed

Granath, Gustaf; Moore, Paul A; Lukenbach, Maxwell C; Waddington, James M

2016-06-27

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha(-1) emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Mitigating wildfire carbon loss in managed northern peatlands through restoration

NASA Astrophysics Data System (ADS)

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-06-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha-1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

Mitigating wildfire carbon loss in managed northern peatlands through restoration

PubMed Central

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-01-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha−1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change. PMID:27346604

A novel transient rotor current control scheme of a doubly-fed induction generator equipped with superconducting magnetic energy storage for voltage and frequency support

NASA Astrophysics Data System (ADS)

Shen, Yang-Wu; Ke, De-Ping; Sun, Yuan-Zhang; Daniel, Kirschen; Wang, Yi-Shen; Hu, Yuan-Chao

2015-07-01

A novel transient rotor current control scheme is proposed in this paper for a doubly-fed induction generator (DFIG) equipped with a superconducting magnetic energy storage (SMES) device to enhance its transient voltage and frequency support capacity during grid faults. The SMES connected to the DC-link capacitor of the DFIG is controlled to regulate the transient dc-link voltage so that the whole capacity of the grid side converter (GSC) is dedicated to injecting reactive power to the grid for the transient voltage support. However, the rotor-side converter (RSC) has different control tasks for different periods of the grid fault. Firstly, for Period I, the RSC injects the demagnetizing current to ensure the controllability of the rotor voltage. Then, since the dc stator flux degenerates rapidly in Period II, the required demagnetizing current is low in Period II and the RSC uses the spare capacity to additionally generate the reactive (priority) and active current so that the transient voltage capability is corroborated and the DFIG also positively responds to the system frequency dynamic at the earliest time. Finally, a small amount of demagnetizing current is provided after the fault clearance. Most of the RSC capacity is used to inject the active current to further support the frequency recovery of the system. Simulations are carried out on a simple power system with a wind farm. Comparisons with other commonly used control methods are performed to validate the proposed control method. Project supported by the National Natural Science Foundation of China (Grant No. 51307124) and the Major Program of the National Natural Science Foundation of China (Grant No. 51190105).

Emergence of currents as a transient quantum effect in nonequilibrium systems

NASA Astrophysics Data System (ADS)

Granot, Er'El; Marchewka, Avi

2011-09-01

Most current calculations are based on equilibrium or semi-equilibrium models. However, except for very special scenarios (like ring configuration), the current cannot exist in equilibrium. Moreover, unlike with equilibrium scenarios, there is no generic approach to confront out-of-equilibrium currents. In this paper we used recent studies on transient quantum mechanics to solve the current, which appears in the presence of very high density gradients and fast transients. It shows that the emerging current appears instantaneously, and although the density beyond the discontinuity is initially negligible the currents there have a finite value, and remain constant for a finite period. It is shown that this nonequilibrium effect can be measured in real experiments (such as cooled rubidium atoms), where the discontinuity is replaced with a finite width (hundreds of nanometers) gradient.

THE DISTRIBUTION OF 51CR-LABELED LYMPHOCYTES INTO ANTIGEN-STIMULATED MICE

PubMed Central

Zatz, Marion M.; Lance, Eugene M.

1971-01-01

The localization of syngeneic 51Cr-labeled lymph node cells was investigated in CBA/J mice previously challenged with sheep erythrocytes, Salmonella H antigen, keyhole limpet hemocyanin, C57BL/6J skin, or rat skin. The effect of time, dose, and route of antigen administration on lymphocyte migration was studied in both primary and secondary responses. When the distribution pattern of lymphocytes was examined after 20–24 hr, it was found that increased localization of labeled cells occurred in spleen after intravenous or intraperitoneal antigen injection, and in draining lymph nodes after subcutaneous antigen injection or skin grafting. Increased localization (trapping) of lymphocytes was antigen dose dependent and could be demonstrated when 1–6 hr had elapsed between intravenous antigen administration, or when 24 hr had elapsed between subcutaneous antigen administration and intravenous cell infusion. Trapping was transient, lasting approximately 24 hr. Maximal trapping of lymphocytes in the draining nodes occurred 9 days after skin grafting in the first-set allograft response, and 3 days after grafting in the second-set allograft and first-set xenograft responses. The cell type trapped, the specificity and mechanism of action of the trap, and the role of lymphocyte trapping in the initiation of immune responses are discussed. PMID:4934148

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar

2018-03-01

We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3 , 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Comparative and Developmental Anatomy of Cardiac Lymphatics

PubMed Central

Ratajska, A.; Gula, G.; Flaht-Zabost, A.; Czarnowska, E.; Ciszek, B.; Jankowska-Steifer, E.; Niderla-Bielinska, J.; Radomska-Lesniewska, D.

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells. PMID:24592145

Comparative and developmental anatomy of cardiac lymphatics.

PubMed

Ratajska, A; Gula, G; Flaht-Zabost, A; Czarnowska, E; Ciszek, B; Jankowska-Steifer, E; Niderla-Bielinska, J; Radomska-Lesniewska, D

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells.

Preliminary groundwater flow model of the basin-fill aquifers in Detrital, Hualapai, and Sacramento Valleys, Mohave County, northwestern Arizona

USGS Publications Warehouse

Tillman, Fred D.; Garner, Bradley D.; Truini, Margot

2013-01-01

Preliminary numerical models were developed to simulate groundwater flow in the basin-fill alluvium in Detrital, Hualapai, and Sacramento Valleys in northwestern Arizona. The purpose of this exercise was to gather and evaluate available information and data, to test natural‑recharge concepts, and to indicate directions for improving future regional groundwater models of the study area. Both steady-state and transient models were developed with a single layer incorporating vertically averaged hydraulic properties over the model layer. Boundary conditions for the models were constant-head cells along the northern and western edges of the study area, corresponding to the location of the Colorado River, and no-flow boundaries along the bedrock ridges that bound the rest of the study area, except for specified flow where Truxton Wash enters the southern end of Hualapai Valley. Steady-state conditions were simulated for the pre-1935 period, before the construction of Hoover Dam in the northwestern part of the model area. Two recharge scenarios were investigated using the steady-state model—one in which natural aquifer recharge occurs directly in places where water is available from precipitation, and another in which natural aquifer recharge from precipitation occurs in the basin-fill alluvium that drains areas of available water. A transient model with 31 stress periods was constructed to simulate groundwater flow for the period 1935–2010. The transient model incorporates changing Colorado River, Lake Mead, and Lake Mohave water levels and includes time-varying groundwater withdrawals and aquifer recharge. Both the steady-state and transient models were calibrated to available water-level observations in basin-fill alluvium, and simulations approximate observed water-level trends throughout most of the study area.

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Qin, Ting; Liao, Congwei; Huang, Shengxiang; Yu, Tianbao; Deng, Lianwen

2018-01-01

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (φS), and central potential (φ0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current-voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

PubMed Central

Zheng, Jiaxin; Wang, Lu; Quhe, Ruge; Liu, Qihang; Li, Hong; Yu, Dapeng; Mei, Wai-Ning; Shi, Junjie; Gao, Zhengxiang; Lu, Jing

2013-01-01

Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. The measured intrinsic cut-off frequency (fT) of graphene transistor generally increases with the reduced gate length (Lgate) till Lgate = 40 nm, and the maximum measured fT has reached 300 GHz. Using ab initio quantum transport simulation, we reveal for the first time that fT of a graphene transistor still increases with the reduced Lgate when Lgate scales down to a few nm and reaches astonishing a few tens of THz. We observe a clear drain current saturation when a band gap is opened in graphene, with the maximum intrinsic voltage gain increased by a factor of 20. Our simulation strongly suggests it is possible to design a graphene transistor with an extraordinary high fT and drain current saturation by continuously shortening Lgate and opening a band gap. PMID:23419782

Shot noise: from Schottky's vacuum tube to present-day quantum devices

NASA Astrophysics Data System (ADS)

Schonenberger, Christian; Oberholzer, Stefan

2004-05-01

Shot-noise in the electrical current through a 'device' is caused by random processes that determine the electron transport from source to drain. Two sources can be distinguished: on the hand, electrons may randomly emanate from the contacts (source and drain), because the relevant states in the reservoirs fluctuate. On the other hand, the transmission through the device is non-deterministic (non-classical). As we demonstrate in this article the former dominates noise in the vacuum tube, whereas the latter applies to coherent mesoscopic devices, which have been studied in great detail during the last decade.

Management of Chest Drains After Thoracic Resections.

PubMed

Filosso, Pier Luigi; Sandri, Alberto; Guerrera, Francesco; Roffinella, Matteo; Bora, Giulia; Solidoro, Paolo

2017-02-01

Immediately after lung resection, air tends to collect in the retrosternal part of the chest wall (in supine position), and fluids in its lower part (costodiaphragmatic sinus). Several general thoracic surgery textbooks currently recommend the placement of 2 chest tubes after major pulmonary resections, one anteriorly, to remove air, and another into the posterior and basilar region, to drain fluids. Recently, several authors advocated the placement of a single chest tube. In terms of air and fluid drainage, this technique demonstrated to be as effective as the conventional one after wedge resection or uncomplicated lobectomy. Copyright © 2016 Elsevier Inc. All rights reserved.

Nano-Transistor Modeling: Two Dimensional Green's Function Method

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

Two quantum mechanical effects that impact the operation of nanoscale transistors are inversion layer energy quantization and ballistic transport. While the qualitative effects of these features are reasonably understood, a comprehensive study of device physics in two dimensions is lacking. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL (Drain Induced Barrier Lowering), and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI).

Photon-assisted quantum transport in quantum point contacts

NASA Astrophysics Data System (ADS)

Hu, Qing

1993-02-01

We have studied the feasibility of photon-assisted quantum transport in semiconductor quantum point contacts or electron waveguides. Due to photon-induced intersubband transitions, it is expected that the drain/source conductance of the quantum point contacts can be modulated by far-infrared (f not less than 300 GHz) radiation, which is similar to the photon-assisted tunneling in superconducting tunnel junctions. An antenna/gate electrodes structure will be used to couple far-infrared photons into quantum point contacts of submicron dimensions. A calculation of the photon-induced drain/source current as a function of the far-infrared radiation power is also presented.

Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

NASA Astrophysics Data System (ADS)

Chauhan, Manvendra Singh; Chauhan, R. K.

2018-04-01

This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

PubMed

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-04-05

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

NASA Astrophysics Data System (ADS)

Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

2018-01-01

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

Evapotranspiration from drained wetlands: drivers, modeling, storage functions, and restoration implications

NASA Astrophysics Data System (ADS)

Shukla, S.; Wu, C. L.; Shrestha, N.

2017-12-01

Abstract Evapotranspiration (ET) is a major component of wetland and watershed water budgets. The effect of wetland drainage on ET is not well understood. We tested whether the current understanding of insignificant effect of drainage on ET in the temperate region wetlands applies to those in the sub-tropics. Eddy covariance (EC) based ET measurements were made for two years at two previously drained and geographically close wetlands in the Everglades region of Florida. One wetland was significantly drained with 97% of its storage capacity lost. The other was a more functional wetland with 42% of storage capacity lost. Annual average ET at the significantly drained wetland was 836 mm, 34% less than the function wetland (1271 mm) and the difference was statistically significant (p = 0.001). Such differences in wetland ET in the same climatic region have not been observed. The difference in ET was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two daily ET models, a regression (r2 = 0.80) and a Relevance Vector Machine (RVM) model (r2 = 0.84), were developed with the latter being more robust. These models, when used in conjunction with hydrologic models, improved ET predictions for drained wetlands. Predictions from an integrated model showed that more intensely drained wetlands at higher elevation should be targeted for restoration of downstream flows (flooding) because they have the ability to loose higher water volume through ET which increases available water storage capacity of wetlands. Daily ET models can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Evapotranspiration from drained wetlands with different hydrologic regimes: Drivers, modeling, and storage functions

NASA Astrophysics Data System (ADS)

Wu, Chin-Lung; Shukla, Sanjay; Shrestha, Niroj K.

2016-07-01

We tested whether the current understanding of insignificant effect of drainage on evapotranspiration (ET) in the temperate region wetlands applies to those in the subtropics. Hydro-climatic drivers causing the changes in drained wetlands were identified and used to develop a generic model to predict wetland ET. Eddy covariance (EC)-based ET measurements were made for two years at two differently drained but close by wetlands, a heavily drained wetland (SW) (97% reduced surface storage) and a more functional wetland (DW) (42% reduced storage). Annual ET for more intensively drained SW was 836 mm, 34% less than DW (1271 mm) and the difference was significant (p = 0.001). This difference was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two generic daily ET models, a regression model (MSE = 0.44 mm2, R2 = 0.80) and a machine learning-based Relevance Vector Machine (RVM) model (MSE = 0.36 mm2, R2 = 0.84), were developed with the latter being more robust. The RVM model can predict changes in ET for different restoration scenarios; a 1.1 m rise in drainage level showed 7% increase ET (18 mm) at SW while the increase at DW was negligible. The additional ET, 28% of surface flow, can enhance water storage, flood protection, and climate mitigation services at SW compared to DW. More intensely drained wetlands at higher elevation should be targeted for restoration for enhanced storage through increased ET. The models developed can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Field induced transient current in one-dimensional nanostructure

NASA Astrophysics Data System (ADS)

Sako, Tokuei; Ishida, Hiroshi

2018-07-01

Field-induced transient current in one-dimensional nanostructures has been studied by a model of an electron confined in a 1D attractive Gaussian potential subjected both to electrodes at the terminals and to an ultrashort pulsed oscillatory electric field with the central frequency ω and the FWHM pulse width Γ. The time-propagation of the electron wave packet has been simulated by integrating the time-dependent Schrödinger equation directly relying on the second-order symplectic integrator method. The transient current has been calculated as the flux of the probability density of the escaping wave packet emitted from the downstream side of the confining potential. When a static bias-field E0 is suddenly applied, the resultant transient current shows an oscillatory decay behavior with time followed by a minimum structure before converging to a nearly constant value. The ω-dependence of the integrated transient current induced by the pulsed electric field has shown an asymmetric resonance line-shape for large Γ while it shows a fringe pattern on the spectral line profile for small Γ. These observations have been rationalized on the basis of the energy-level structure and lifetime of the quasibound states in the bias-field modified confining potential obtained by the complex-scaling Fourier grid Hamiltonian method.

Optical-resolution photoacoustic microscopy of ischemic stroke

NASA Astrophysics Data System (ADS)

Hu, Song; Gonzales, Ernie; Soetikno, Brian; Gong, Enhao; Yan, Ping; Maslov, Konstantin; Lee, Jin-Moo; Wang, Lihong V.

2011-03-01

A major obstacle in understanding the mechanism of ischemic stroke is the lack of a tool to noninvasively or minimally invasively monitor cerebral hemodynamics longitudinally. Here, we applied optical-resolution photoacoustic microscopy (OR-PAM) to longitudinally study ischemic stroke induced brain injury in a mouse model with transient middle cerebral artery occlusion (MCAO). OR-PAM showed that, during MCAO, the average hemoglobin oxygen saturation (sO2) values of feeder arteries and draining veins within the stroke core region dropped ~10% and ~34%, respectively. After reperfusion, arterial sO2 recovered back to the baseline; however, the venous sO2 increased above the baseline value by ~7%. Thereafter, venous sO2 values were close to the arterial sO2 values, suggesting eventual brain tissue infarction.

Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke

2016-03-15

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due tomore » the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.« less

A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network.

PubMed

Du, Xiaosong; Li, Yajuan; Herman, Gregory S

2016-11-03

Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10 3 and effective electron mobilities of 3.6 cm 2 V -1 s -1 . The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive V ON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

NASA Astrophysics Data System (ADS)

Raksharam; Dutta, Aloke K.

2017-04-01

In this paper, a unified analytical model for the drain current of a symmetric Double-Gate Junctionless Field-Effect Transistor (DG-JLFET) is presented. The operation of the device has been classified into four modes: subthreshold, semi-depleted, accumulation, and hybrid; with the main focus of this work being on the accumulation mode, which has not been dealt with in detail so far in the literature. A physics-based model, using a simplified one-dimensional approach, has been developed for this mode, and it has been successfully integrated with the model for the hybrid mode. It also includes the effect of carrier mobility degradation due to the transverse electric field, which was hitherto missing in the earlier models reported in the literature. The piece-wise models have been unified using suitable interpolation functions. In addition, the model includes two most important short-channel effects pertaining to DG-JLFETs, namely the Drain Induced Barrier Lowering (DIBL) and the Subthreshold Swing (SS) degradation. The model is completely analytical, and is thus computationally highly efficient. The results of our model have shown an excellent match with those obtained from TCAD simulations for both long- and short-channel devices, as well as with the experimental data reported in the literature.

Printable organic thin film transistors for glucose detection incorporating inkjet-printing of the enzyme recognition element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elkington, D., E-mail: Daniel.Elkington@newcastle.edu.au; Wasson, M.; Belcher, W.

The effect of device architecture upon the response of printable enzymatic glucose sensors based on poly(3-hexythiophene) (P3HT) organic thin film transistors is presented. The change in drain current is used as the basis for glucose detection and we show that significant improvements in drain current response time can be achieved by modifying the design of the sensor structure. In particular, we show that eliminating the dielectric layer and reducing the thickness of the active layer reduce the device response time considerably. The results are in good agreement with a diffusion based model of device operation, where an initial rapid dedopingmore » process is followed by a slower doping of the P3HT layer from protons that are enzymatically generated by glucose oxidase (GOX) at the Nafion gate electrode. The fitted diffusion data are consistent with a P3HT doping region that is close to the source-drain electrodes rather than located at the P3HT:[Nafion:GOX] interface. Finally, we demonstrate that further improvements in sensor structure and morphology can be achieved by inkjet-printing the GOX layer, offering a pathway to low-cost printed biosensors for the detection of glucose in saliva.« less

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

PubMed

Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

2014-04-23

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

Drainage after Modified Radical Mastectomy – A Methodological Mini-Review

PubMed Central

Tsocheva, Dragostina; Marinova, Katerina; Dobrev, Emil; Nenkov, Rumen

2017-01-01

Breast cancer is a socially relevant group of malignant conditions of the mammary gland, affecting both males and females. Most commonly the surgical approach of choice is a modified radical mastectomy (MRM), due to it allowing for both the removal of the main tumor mass and adjacent glandular tissue, which are suspected of infiltration and multifocality of the process, and a sentinel axillary lymph node removal. Most common post-surgical complications following MRM are the formation of a hematoma, the infection of the surgical wound and the formation of a seroma. These post-surgical complications can, at least in part, be attributed to the drainage of the surgical wound. However, the lack of modern and official guidelines provides an ample scope for innovation, but also leads to a need for a randomized comparison of the results. We compared different approaches to wound drainage after MRM, reviewed based on the armamentarium, number of drains, location, type of drainage system, timing of drain removal and no drainage alternatives. Currently, based on the general results, scientific and comparative discussions, seemingly the most affordable methodology with the best patient outcome, with regards to hospital stay and post-operative complications, is the placement of one medial to lateral (pectoro-axillary) drain with low negative pressure. Ideally, the drain should be removed on the second or third postoperative day or when the amount of drained fluid in the last 24 hours reaches below 50 milliliters. PMID:28929038

Experimental investigation on On-Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor

NASA Astrophysics Data System (ADS)

Amrani, Aumeur El; Es-saghiri, Abdeljabbar; Boufounas, El-Mahjoub; Lucas, Bruno

2018-06-01

The performance of a pentacene based organic thin film transistor (OTFT) with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Thus, we noticed that the onset voltage shifts toward positive voltage values with the drain voltage increase. In addition, threshold-onset differential voltage (TODV) is proposed as an original approach to estimate an averaged carrier density in pentacene. Indeed, a value of about 4.5 × 1016 cm-3 is reached at relatively high gate voltage of -50 V; this value is in good agreement with that reported in literature with other technique measurements. However, at a low applied gate voltage, the averaged pentacene carrier density remains two orders of magnitude lower; it is of about 2.8 × 1014 cm-3 and remains similar to that obtained from space charge limited current approach for low applied bias voltage of about 2.2 × 1014 cm-3. Furthermore, high IOn/IOff and IOn/IOnset current ratios of 5 × 106 and 7.5 × 107 are reported for lower drain voltage, respectively. The investigated OTFTs also showed good electrical performance including carrier mobility increasing with gate voltage; mobility values of 4.5 × 10-2 cm2 V-1 s-1 and of 4.25 × 10-2 cm2 V-1 s-1 are reached for linear and saturation regimes, respectively. These results remain enough interesting since current modulation ratio exceeds a value of 107 that is a quite important requirement than high mobility for some particular logic gate applications.

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.;

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Transient natural ventilation of a room with a distributed heat source

NASA Astrophysics Data System (ADS)

Fitzgerald, Shaun D.; Woods, Andrew W.

We report on an experimental and theoretical study of the transient flows which develop as a naturally ventilated room adjusts from one temperature to another. We focus on a room heated from below by a uniform heat source, with both high- and low-level ventilation openings. Depending on the initial temperature of the room relative to (i) the final equilibrium temperature and (ii) the exterior temperature, three different modes of ventilation may develop. First, if the room temperature lies between the exterior and the equilibrium temperature, the interior remains well-mixed and gradually heats up to the equilibrium temperature. Secondly, if the room is initially warmer than the equilibrium temperature, then a thermal stratification develops in which the upper layer of originally hot air is displaced upwards by a lower layer of relatively cool inflowing air. At the interface, some mixing occurs owing to the effects of penetrative convection. Thirdly, if the room is initially cooler than the exterior, then on opening the vents, the original air is displaced downwards and a layer of ambient air deepens from above. As this lower layer drains, it is eventually heated to the ambient temperature, and is then able to mix into the overlying layer of external air, and the room becomes well-mixed. For each case, we present new laboratory experiments and compare these with some new quantitative models of the transient flows. We conclude by considering the implications of our work for natural ventilation of large auditoria.

Skyrmion based universal memory operated by electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zang, Jiadong; Chien, Chia-Ling; Li, Yufan

2017-09-26

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Microscopic image processing systems for measuring nonuniform film thickness profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, A.H.; Plawsky, J.L.; DasGupta, S.

1994-01-01

In very thin liquid films. transport processes are controlled by the temperature and the interfacial intermolecular force field which is a function of the film thickness profile and interfacial properties. The film thickness profile and interfacial properties can be measured most efficiently using a microscopic image processing system. IPS, to record the intensity pattern of the reflected light from the film. There are two types of IPS: an image analyzing interferometer (IAI) and/or an image scanning ellipsometer (ISE). The ISE is a novel technique to measure the two dimensional thickness profile of a nonuniform, thin film, from 1 nm upmore » to several {mu}m, in a steady state as well as in a transient state. It is a full field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. Using the ISE, the transient thickness profile of a draining thin liquid film was measured and modeled. The interfacial conditions were determined in situ by measuring the Hamaker constant. The ISE and IAI systems are compared.« less

Randomized Controlled Trial to Reduce Bacterial Colonization of Surgical Drains After Breast and Axillary Operations

PubMed Central

Degnim, Amy C.; Scow, Jeffrey S.; Hoskin, Tanya L.; Miller, Joyce P.; Loprinzi, Margie; Boughey, Judy C.; Jakub, James W.; Throckmorton, Alyssa; Patel, Robin; Baddour, Larry M.

2014-01-01

Objective To determine if bacterial colonization of drains can be reduced by local antiseptic interventions. Summary Background Drains are a potential source of bacterial entry into surgical wounds and may contribute to surgical site infection (SSI) after breast surgery. Methods Following IRB approval, patients undergoing total mastectomy and/or axillary lymph node dissection were randomized to standard drain care (control) or drain antisepsis (treated). Standard drain care comprised twice daily cleansing with alcohol swabs. Antisepsis drain care included 1) a chlorhexidine disc at the drain exit site and 2) irrigation of the drain bulb twice daily with dilute sodium hypochlorite (Dakin’s) solution. Cultures results of drain fluid and tubing were compared between control and antisepsis groups. Results Overall, 100 patients with 125 drains completed the study with 48 patients (58 drains) in the control group and 52 patients (67 drains) in the antisepsis group. Cultures of drain bulb fluid at one week were positive (1+ or greater growth) in 66% (38/58) of control drains compared to 21% of antisepsis drains (14/67), (p=0.0001). Drain tubing cultures demonstrated >50 CFU in 19% (8/43) of control drains versus 0% (0/53) of treated drains (p=0.004). SSI was diagnosed in 6 patients (6%) - 5 patients in the control group and 1 patient in the antisepsis group (p=0.06). Conclusions Simple and inexpensive local antiseptic interventions with a chlorhexidine disc and hypochlorite solution reduce bacterial colonization of drains. Based on these data, further study of drain antisepsis and its potential impact on SSI rate is warranted. PMID:23518704

Sustained and transient calcium currents in horizontal cells of the white bass retina.

PubMed

Sullivan, J M; Lasater, E M

1992-01-01

Calcium currents were recorded from cultured horizontal cells (HCs) isolated from adult white bass retinas, using the whole-cell patch-clamp technique. Ca2+ currents were enhanced using 10 mM extracellular Ca2+, while Na+ and K+ currents were pharmacologically suppressed. Two components of the Ca2+ current, one transient, the other sustained, were found. The large transient component of the Ca2+ current, which has not been seen before in HCs, is similar, but not identical, to the T-type Ca2+ current described previously in a variety of preparations. The sustained component of the Ca2+ current is similar, but not identical, to the L-type current described in other preparations. FTX, a factor isolated from the venom of the funnel-web spider, Agelenopsis aperta, preferentially and irreversibly blocks the sustained component of the Ca2+ current at very dilute concentrations. The sustained component of the Ca2+ current inactivates slowly, over the course of 15-60 s, in some HCs. This inactivation of the sustained Ca2+ current, when present, is primarily voltage dependent rather than Ca2+ dependent.

Sustained and transient calcium currents in horizontal cells of the white bass retina

PubMed Central

1992-01-01

Calcium currents were recorded from cultured horizontal cells (HCs) isolated from adult white bass retinas, using the whole-cell patch- clamp technique. Ca2+ currents were enhanced using 10 mM extracellular Ca2+, while Na+ and K+ currents were pharmacologically suppressed. Two components of the Ca2+ current, one transient, the other sustained, were found. The large transient component of the Ca2+ current, which has not been seen before in HCs, is similar, but not identical, to the T-type Ca2+ current described previously in a variety of preparations. The sustained component of the Ca2+ current is similar, but not identical, to the L-type current described in other preparations. FTX, a factor isolated from the venom of the funnel-web spider, Agelenopsis aperta, preferentially and irreversibly blocks the sustained component of the Ca2+ current at very dilute concentrations. The sustained component of the Ca2+ current inactivates slowly, over the course of 15- 60 s, in some HCs. This inactivation of the sustained Ca2+ current, when present, is primarily voltage dependent rather than Ca2+ dependent. PMID:1371309

Death Valley regional groundwater flow system, Nevada and California-Hydrogeologic framework and transient groundwater flow model

USGS Publications Warehouse

Belcher, Wayne R.; Sweetkind, Donald S.

2010-01-01

A numerical three-dimensional (3D) transient groundwater flow model of the Death Valley region was developed by the U.S. Geological Survey for the U.S. Department of Energy programs at the Nevada Test Site and at Yucca Mountain, Nevada. Decades of study of aspects of the groundwater flow system and previous less extensive groundwater flow models were incorporated and reevaluated together with new data to provide greater detail for the complex, digital model. A 3D digital hydrogeologic framework model (HFM) was developed from digital elevation models, geologic maps, borehole information, geologic and hydrogeologic cross sections, and other 3D models to represent the geometry of the hydrogeologic units (HGUs). Structural features, such as faults and fractures, that affect groundwater flow also were added. The HFM represents Precambrian and Paleozoic crystalline and sedimentary rocks, Mesozoic sedimentary rocks, Mesozoic to Cenozoic intrusive rocks, Cenozoic volcanic tuffs and lavas, and late Cenozoic sedimentary deposits of the Death Valley regional groundwater flow system (DVRFS) region in 27 HGUs. Information from a series of investigations was compiled to conceptualize and quantify hydrologic components of the groundwater flow system within the DVRFS model domain and to provide hydraulic-property and head-observation data used in the calibration of the transient-flow model. These studies reevaluated natural groundwater discharge occurring through evapotranspiration (ET) and spring flow; the history of groundwater pumping from 1913 through 1998; groundwater recharge simulated as net infiltration; model boundary inflows and outflows based on regional hydraulic gradients and water budgets of surrounding areas; hydraulic conductivity and its relation to depth; and water levels appropriate for regional simulation of prepumped and pumped conditions within the DVRFS model domain. Simulation results appropriate for the regional extent and scale of the model were provided by acquiring additional data, by reevaluating existing data using current technology and concepts, and by refining earlier interpretations to reflect the current understanding of the regional groundwater flow system. Groundwater flow in the Death Valley region is composed of several interconnected, complex groundwater flow systems. Groundwater flow occurs in three subregions in relatively shallow and localized flow paths that are superimposed on deeper, regional flow paths. Regional groundwater flow is predominantly through a thick Paleozoic carbonate rock sequence affected by complex geologic structures from regional faulting and fracturing that can enhance or impede flow. Spring flow and ET are the dominant natural groundwater discharge processes. Groundwater also is withdrawn for agricultural, commercial, and domestic uses. Groundwater flow in the DVRFS was simulated using MODFLOW-2000, the U.S. Geological Survey 3D finitedifference modular groundwater flow modeling code that incorporates a nonlinear least-squares regression technique to estimate aquifer parameters. The DVRFS model has 16 layers of defined thickness, a finite-difference grid consisting of 194 rows and 160 columns, and uniform cells 1,500 meters (m) on each side. Prepumping conditions (before 1913) were used as the initial conditions for the transient-state calibration. The model uses annual stress periods with discrete recharge and discharge components. Recharge occurs mostly from infiltration of precipitation and runoff on high mountain ranges and from a small amount of underflow from adjacent basins. Discharge occurs primarily through ET and spring discharge (both simulated as drains) and water withdrawal by pumping and, to a lesser amount, by underflow to adjacent basins simulated by constant-head boundaries. All parameter values estimated by the regression are reasonable and within the range of expected values. The simulated hydraulic heads of the final calibrated transient mode

Strain and thermally induced magnetic dynamics and spin current in magnetic insulators subject to transient optical grating

NASA Astrophysics Data System (ADS)

Wang, Xi-Guang; Chotorlishvili, Levan; Berakdar, Jamal

2017-07-01

We analyze the magnetic dynamics and particularlythe spin current in an open-circuit ferromagnetic insulator irradiated by two intense, phase-locked laser pulses. The interference of the laser beams generates a transient optical grating and a transient spatio-temporal temperature distribution. Both effects lead to elastic and heat waves at the surface and into the bulk of the sample. The strain induced spin current as well as the thermally induced magnonic spin current are evaluated numerically on the basis of micromagnetic simulations using solutions of the heat equation. We observe that the thermo-elastically induced magnonic spin current propagates on a distance larger than the characteristic size of thermal profile, an effect useful for applications in remote detection of spin caloritronics phenomena. Our findings point out that exploiting strain adds a new twist to heat-assisted magnetic switching and spin-current generation for spintronic applications.

A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

NASA Astrophysics Data System (ADS)

Cai, M. X.; Yao, R. H.

2018-03-01

Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Analog-model analysis of effect of wastewater management on the ground-water reservoir in Nassau and Suffolk Counties, New York: Report I: Proposed and current sewerage

USGS Publications Warehouse

Kimmel, Grant E.; Harbaugh, Arlen W.

1976-01-01

By 1995, the water table may fall by as much as 5 metres (16 feet) in east-central Nassau County and as much as 1.8 metres (6 feet) in central Suffolk County as a result of proposed sewerage programs. similar, but generally slightly less, change may occur in the potentiometric head in the Magothy aquifer. Streamflow may decrease by as much as 55 percent in streams draining from Nassau County Sewage Disposal District 3 and as much as 56 percent in streams draining from the Huntington-Northport Sewer District.

Global Precipitation Measurement (GPM) Spacecraft Lithium Ion Battery Micro-Cycling Investigation

NASA Technical Reports Server (NTRS)

Dakermanji, George; Lee, Leonine; Spitzer, Thomas

2016-01-01

The Global Precipitation Measurement (GPM) spacecraft was jointly developed by NASA and JAXA. It is a Low Earth Orbit (LEO) spacecraft launched on February 27, 2014. The power system is a Direct Energy Transfer (DET) system designed to support 1950 watts orbit average power. The batteries use SONY 18650HC cells and consist of three 8s by 84p batteries operated in parallel as a single battery. During instrument integration with the spacecraft, large current transients were observed in the battery. Investigation into the matter traced the cause to the Dual-Frequency Precipitation Radar (DPR) phased array radar which generates cyclical high rate current transients on the spacecraft power bus. The power system electronics interaction with these transients resulted in the current transients in the battery. An accelerated test program was developed to bound the effect, and to assess the impact to the mission.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limitingmore » resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.« less

Design of transient light signal simulator based on FPGA

NASA Astrophysics Data System (ADS)

Kang, Jing; Chen, Rong-li; Wang, Hong

2014-11-01

A design scheme of transient light signal simulator based on Field Programmable gate Array (FPGA) was proposed in this paper. Based on the characteristics of transient light signals and measured feature points of optical intensity signals, a fitted curve was created in MATLAB. And then the wave data was stored in a programmed memory chip AT29C1024 by using SUPERPRO programmer. The control logic was realized inside one EP3C16 FPGA chip. Data readout, data stream cache and a constant current buck regulator for powering high-brightness LEDs were all controlled by FPGA. A 12-Bit multiplying CMOS digital-to-analog converter (DAC) DAC7545 and an amplifier OPA277 were used to convert digital signals to voltage signals. A voltage-controlled current source constituted by a NPN transistor and an operational amplifier controlled LED array diming to achieve simulation of transient light signal. LM3405A, 1A Constant Current Buck Regulator for Powering LEDs, was used to simulate strong background signal in space. Experimental results showed that the scheme as a transient light signal simulator can satisfy the requests of the design stably.

Using Arc/Info GIS to help implement the National Pollutant Discharge Elimination System (NPDES) stormwater permit for Los Angeles County

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levine, D.A.; Pace, P.J.; Woods, J.A.

1997-06-01

One of Los Angeles County Department of Public Works` many responsibilities is to manage non-point pollution that enters the storm drain network within Los Angeles County. The management of this non-point source pollution is mandated by the NPDES guidelines under the Federal Clean Water Act. These guidelines require the County to monitor the drainage network and the storm water and urban runoff flowing through it. The County covers over 3,117 square miles, with the NPDES Permit covering over 3,100 square miles and over 2500 miles of storm drains. A proposed solution to monitor and manage this vast geographic area ismore » centered upon an Arc/Info GIS. Some of the many concerns which need to be addressed include the administration and evaluation of Best Management Practices (BMP`s), storm drain inspection for illegal connections and illicit discharges, and pollutant load assessment and modeling. The storm drain network and other coverages will be related to external data bases currently used for facility management and planning. This system would be used for query purposes to perform spatial modeling and {open_quotes}what if{close_quotes} scenarios needed to create maps and reports required by the permit and to evaluate various BMP implementation strategies.« less

Chest tube drainage of pleural effusions--an audit of current practice and complications at Hutt Hospital.

PubMed

Epstein, Erica; Jayathissa, Sisira; Dee, Stephen

2012-05-11

The aims of the study were to review small-bore chest tube insertion practices for drainage of pleural fluid at Hutt Valley District Health Board (HVDHB), to assess complications, and compare the findings with international data. Retrospective analysis of clinical records was completed on all chest tube insertions for drainage of pleural fluid at HVDHB from December 2008 to November 2009. Descriptive statistics were used to present demographics and tube-associated complications. Comparison was made to available similar international data. Small-bore tubes comprised 59/65 (91%) chest tube insertions and 23/25 (92%) complications. Available comparative data was limited. Ultrasound was used in 36% of insertions. Nearly half of chest drains placed for empyema required subsequent cardiothoracic surgical intervention. Chest drain complication rates at HVDHB were comparable to those seen internationally. Referral rates to cardiothoracic surgery for empyema were within described ranges. The importance of procedural training for junior medical staff, optimising safety of drain insertions with ultrasound guidance, and clear clinical governance for chest tube insertions are important in minimising harm from this procedure. Specialist societies need to take a leadership in providing guidance on chest drain insertions to secondary and tertiary hospitals in Australia and New Zealand.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Composite fibrous glaucoma drainage implant

NASA Astrophysics Data System (ADS)

Klapstova, A.; Horakova, J.; Shynkarenko, A.; Lukas, D.

2017-10-01

Glaucoma is a frequent reason of loss vision. It is usually caused by increased intraocular pressure leading to damage of optic nerve head. This work deals with the development of fibrous structure suitable for glaucoma drainage implants (GDI). Commercially produced metallic glaucoma implants are very effective in lowering intraocular pressure. However, these implants may cause adverse events such as damage to adjacent tissue, fibrosis, hypotony or many others [1]. The aim of this study is to reduce undesirable properties of currently produced drains and improve their properties by creating of the composite fibrous drain for achieve a normal intraocular pressure. Two types of electrospinning technologies were used for the production of very small tubular implants. First type was focused for production of outer part of tubular drain and the second type of electrospinning method made the inner part of shape follows the connections of both parts. Complete implant had a special properties suitable for drainage of fluid. Morphological parameters, liquid transport tests and in-vitro cell adhesion tests were detected.

Community-based environmental management for malaria control: evidence from a small-scale intervention in Dar es Salaam, Tanzania.

PubMed

Castro, Marcia C; Tsuruta, Atsuko; Kanamori, Shogo; Kannady, Khadija; Mkude, Sixbert

2009-04-08

Historically, environmental management has brought important achievements in malaria control and overall improvements of health conditions. Currently, however, implementation is often considered not to be cost-effective. A community-based environmental management for malaria control was conducted in Dar es Salaam between 2005 and 2007. After community sensitization, two drains were cleaned followed by maintenance. This paper assessed the impact of the intervention on community awareness, prevalence of malaria infection, and Anopheles larval presence in drains. A survey was conducted in neighbourhoods adjacent to cleaned drains; for comparison, neighbourhoods adjacent to two drains treated with larvicides and two drains under no intervention were also surveyed. Data routinely collected by the Urban Malaria Control Programme were also used. Diverse impacts were evaluated through comparison of means, odds ratios (OR), logistic regression, and time trends calculated by moving averages. Individual awareness of health risks and intervention goals were significantly higher among sensitized neighbourhoods. A reduction in the odds of malaria infection during the post-cleaning period in intervention neighbourhoods was observed when compared to the pre-cleaning period (OR = 0.12, 95% CI 0.05-0.3, p < 0.001). During the post-cleaning period, a higher risk of infection (OR = 1.7, 95% CI 1.1-2.4, p = 0.0069) was observed in neighbourhoods under no intervention compared to intervention ones. Eighteen months after the initial cleaning, one of the drains was still clean due to continued maintenance efforts (it contained no waste materials and the water was flowing at normal velocity). A three-month moving average of the percentage of water habitats in that drain containing pupae and/or Anopheles larvae indicated a decline in larval density. In the other drain, lack of proper resources and local commitment limited success. Although environmental management was historically coordinated by authoritarian/colonial regimes or by industries/corporations, its successful implementation as part of an integrated vector management framework for malaria control under democratic governments can be possible if four conditions are observed: political will and commitment, community sensitization and participation, provision of financial resources for initial cleaning and structural repairs, and inter-sectoral collaboration. Such effort not only is expected to reduce malaria transmission, but has the potential to empower communities, improve health and environmental conditions, and ultimately contribute to poverty alleviation and sustainable development.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Investigation of dielectric pocket induced variations in tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Upasana; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2016-04-01

The performance of conventional Tunnel FETs struggling from ambipolar issues, insufficient on-current, lower transconductance value, higher delay and lower cut off frequency has been improved by introducing several material and device engineering concepts in past few years. Keeping this in view, another interesting and reliable option i.e. Dielectric Pocket TFET (featuring a dielectric pocket placement near tunneling junction) has been comprehensively and qualitatively demonstrated using ATLAS device simulator. The architecture has been explored in terms of various device electrostatic parameters such as potential, energy band profile, electron and hole concentration, electric field variation and band to band generation rate (GBTB) near the tunneling junction where the Dielectric Pocket (DP) has been introduced. Subsequently, a detailed investigation by changing the position and dielectric constant of pocket at respective junctions has been made where DP induced variations in drain current, transconductance and parasitic capacitance have been examined. The work highlights major improvements over conventional TFET in terms of lower subthreshold swing and threshold voltage, higher drain current and transconductance, improved on-to-off current ratio, suppressed ambipolar conduction and improved dynamic power dissipation issues for low voltage analog and digital applications.

Simulation study and experimental results for detection and classification of the transient capacitor inrush current using discrete wavelet transform and artificial intelligence

NASA Astrophysics Data System (ADS)

Patcharoen, Theerasak; Yoomak, Suntiti; Ngaopitakkul, Atthapol; Pothisarn, Chaichan

2018-04-01

This paper describes the combination of discrete wavelet transforms (DWT) and artificial intelligence (AI), which are efficient techniques to identify the type of inrush current, analyze the origin and possible cause on the capacitor bank switching. The experiment setup used to verify the proposed techniques can be detected and classified the transient inrush current from normal capacitor rated current. The discrete wavelet transforms are used to detect and classify the inrush current. Then, output from wavelet is acted as input of fuzzy inference system for discriminating the type of switching transient inrush current. The proposed technique shows enhanced performance with a discrimination accuracy of 90.57%. Both simulation study and experimental results are quite satisfactory with providing the high accuracy and reliability which can be developed and implemented into a numerical overcurrent (50/51) and unbalanced current (60C) protection relay for an application of shunt capacitor bank protection in the future.

Dual Transformer Model based on Standard Circuit Elements for the Study of Low- and Mid-frequency Transients

NASA Astrophysics Data System (ADS)

Jazebi, Saeed

This thesis is a step forward toward achieving the final objective of creating a fully dual model for transformers including eddy currents and nonlinearities of the iron core using the fundamental electrical components already available in the EMTP-type programs. The model is effective for the study of the performance of transformers during power system transients. This is very important for transformer designers, because the insulation of transformers is determined with the overvoltages caused by lightning or switching operations. There are also internally induced transients that occur when a switch is actuated. For example switching actions for reconfiguration of distribution systems that offers economic advantages, or protective actions to clear faults and large short-circuit currents. Many of the smart grid concepts currently under development by many utilities rely heavily on switching to optimize resources that produce transients in the system. On the other hand, inrush currents produce mechanical forces which deform transformer windings and cause malfunction of the differential protection. Also, transformer performance under ferroresonance and geomagnetic induced currents are necessary to study. In this thesis, a physically consistent dual model applicable to single-phase two-winding transformers is proposed. First, the topology of a dual electrical equivalent circuit is obtained from the direct application of the principle of duality. Then, the model parameters are computed considering the variations of the transformer electromagnetic behavior under various operating conditions. Current modeling techniques use different topological models to represent diverse transient situations. The reversible model proposed in this thesis unifies the terminal and topological equivalent circuits. The model remains invariable for all low-frequency transients including deep saturation conditions driven from any of the two windings. The very high saturation region of the iron core magnetizing characteristic is modified with the accurate measurement of the air-core inductance. The air-core inductance is measured using a non-ideal low-power rectifier. Its dc output serves to drive the transformer into deep saturation, and its ripple provides low-amplitude variable excitation. The principal advantage of this method is its simplicity. To model the eddy current effects in the windings, a novel equivalent circuit is proposed. The circuit is derived from the principle of duality and therefore, matches the electromagnetic physical behavior of the transformer windings. It properly models the flux paths and current distribution from dc to MHz. The model is synthesized from a non-uniform concentric discretization of the windings. Concise guidelines are given to optimally calculate the width of the sub-divisions for various transient simulations. To compute the circuit parameters only information about the geometry of the windings and about their material properties is needed. The calculation of the circuit parameters does not require an iterative process. Therefore, the parameters are always real, positive, and free from convergence problems. The proposed model is tested with single-phase transformers for the calculation of magnetizing inrush currents, series ferroresonance, and Geomagnetic Induced Currents (GIC). The electromagnetic transient response of the model is compared to laboratory measurements for validation. Also, 3D finite element simulations are used to validate the electromagnetic behavior of the transformer model. Large manufacturer of transformers, power system designers, and electrical utility companies can benefit from the new model. It simplifies the design and optimization of the transformers' insulation, thereby reducing cost, and enhancing reliability of the system. The model could also be used for inrush current and differential protection studies, geomagnetic induced current studies, harmonic penetration studies, and switching transient studies.

Chemical fractionation of metals in wetland sediments: Indiana Dunes National Lakeshore.

PubMed

Dollar, N L; Souch, C J; Filippelli, G M; Mastalerz, M

2001-09-15

Tessier-type (1979) sequential extractions for heavy metals (Cd, Cr, Cu, Fe, Mn, Pb, and Zn) were conducted on sediments from two wetland sites, one inundated and the other drained, within the Indiana Dunes National Lakeshore (IDNL), NW Indiana, with the objective of (i) evaluating extraction techniques on organic-rich sediments, (ii) determining the geochemistry and mobility of potentially biotoxic trace metals in a contaminated environment, and (iii) considering the implications of different restoration strategies on the potential for heavy metal remobilization. Long and repeated extractions were needed to effectively degrade the organic-rich sediments (up to 75% of the sediment by mass). Analysis of sulfur fractionation revealed that it was predominantly sequestered along with the organically bound fraction (renamed oxidizable). Metal recovery was good with the sum of the extractant steps typically within 20% of the total metal concentration determined after total microwave digestion. Results showed metal fractionation to be both metal- and site-specific, The oxidizable fraction is dominant for Cu, Cr, and Fe (>65% of the nonresidual fraction for almost all samples) and overall is most important also for Cd and Pb. The iron/manganese oxide fraction is important for Pb, Mn, and Zn, particularly at the drained site. The carbonate bound fraction is relatively insignificant at both sites, except for Cd and Mn, although it is more important at the drained site. The exchangeable fraction is significant in the uppermost sediments at the drained site, particularly for Cd (3-24%), Pb (3-14%), and Zn (36-45%); whereas, for the inundated site, it ranged only from 0 to 1% Zn, with no detectable Cd or Pb. Chromium, Cu, and Fe exist in forms not likely to be remobilized, whereas Cd, Mn, Pb, and Zn are potentially mobile if drained wetland sites are reflooded (and pH and redox potential altered). Simple mass balance calculations illustrate the potential for the removal of approximately 84,375 kg of exchangeable Zn if currently drained sites across the IDNL are reflooded, with concentrations in water draining into Lake Michigan as high as 5 ppm.

A novel inexpensive IV catheterization training model for paramedic students.

PubMed

Parwani, Vivek; Cone, David C

2006-01-01

Teaching paramedic students venipuncture and intravenous catheterization has traditionally relied on bulky, expensive phlebotomy models. A gelatin intravenous model (GIM) costing less than 50 cents is currently being used in the training of medical students and interns. The study objective was to evaluate paramedic students' perceptions of the GIM as a training tool. GIMs are created using gelatin, psyllium, Penrose drains, food coloring, salt, and water. Penrose drains are filled with artificial blood composed of salt water and food coloring. The drains are placed in an aluminum pan with a base of hardening gelatin, with half-inch drains at the bottom of the pan and quarter-inch drains higher up in layers of mixed psyllium and gelatin to simulate deep and superficial veins respectively. A convenience, volunteer sample of 14 paramedic students who previously trained with traditional phlebotomy models each made two to five attempts at intravenous insertion using the GIM. Perceptions of the GIM were measured using a Likert scale (1, worst rating; 5, best rating). Means are reported. Study subjects rated ease of use at 4.17, realism at 4.07, and effectiveness in learning intravenous insertion at 4.28. GIM as a more effective teaching tool than the conventional rubber arm yielded a rating of 4.14. This study is limited by a small sample size, and further studies evaluating the GIMs construct and content validity are needed. Despite these limitations, given the GIMs simplicity and value, paramedic instructors may wish to consider implementation of this device in their training programs.

Substance P modulates localized calcium transients and membrane current responses in murine colonic myocytes

PubMed Central

Bayguinov, Orline; Hagen, Brian; Sanders, Kenton M

2003-01-01

Neurokinins contribute to the neural regulation of gastrointestinal (GI) smooth muscles. We studied responses of murine colonic smooth muscle cells to substance P (SP) and NK1 and NK2 agonists using confocal microscopy and the patch clamp technique. Colonic myocytes generated localized Ca2+ transients that were coupled to spontaneous transient outward currents (STOCs). SP (10−10 M) increased Ca2+ transients and STOCs. Higher concentrations of SP (10−6 M) increased basal Ca2+ and inhibited Ca2+ transients and STOCs. Effects of SP were due to increased Ca2+ entry via L-type Ca2+ channels, and were mediated by protein kinase C (PKC). Nifedipine (10−6 M) and the PKC inhibitor, GF 109203X (10−6 M) reduced L-type Ca2+ current and blocked the effects of SP. SP responses depended upon parallel stimulation of NK1 and NK2 receptors. NK1 agonist ([Sar9,Met(O2)11]-substance P; SSP) and NK2 agonists (neurokinin A (NKA) or GR-64349) did not mimic the effects of SP alone, but NK1 and NK2 agonists were effective when added in combination (10−10–10−6 M). Consistent with this, either an NK1-specific antagonist (GR-82334; 10−7 M) or an NK2-specific antagonist (MEN 10,627; 10−7 M) blocked responses to SP (10−6 M). Ryanodine (10−5 M) blocked the increase in Ca2+ transients and STOCs in response to SP (10−10 M). Our findings show that low concentrations of SP, via PKC-dependent enhancement of L-type Ca2+ current and recruitment of ryanodine receptors, stimulate Ca2+ transients. At higher concentrations of SP (10−6 M), basal Ca2+ increases and spontaneous Ca2+ transients and STOCs are inhibited. PMID:12711623

Pyometra in childhood.

PubMed

Barry, Carole

2015-05-01

Pyometra, an accumulation of pus in the uterine cavity, occurs rarely in children but should be considered in the differential diagnosis of an intra-abdominal or pelvic abscess. A 10-month-old infant presented with an increasing abdominal mass. She had previous respiratory and diarrheal illnesses. She was underweight, febrile, and tachycardic with an 8×6-cm mobile tender mass in her lower abdomen. Investigations demonstrated leukocytosis and ultrasonogram confirmed a cystic mass. At laparotomy a pyometra was found. Needle aspiration and washout of the uterine cavity were performed but a second procedure was required to place a drain into the cavity. Pyometra occurs rarely in childhood. A review of cases associates a hypoestrogenized endometrium exposed to transient bacteremia with obstruction to uterine drainage. Treatment should include continuous drainage of the uterus.

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

PubMed Central

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-01-01

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables. PMID:28773037

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits.

PubMed

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-06-21

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

NASA Astrophysics Data System (ADS)

Vishvakarma, S. K.; Beohar, Ankur; Vijayvargiya, Vikas; Trivedi, Priyal

2017-07-01

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel field-effect transistor (TFET) has been made using distinct device geometry. Firstly, performance parameters of GAA-TFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm. However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device. Project supported by the Council of Scientific and Industrial Research (CSIR) Funded Research Project, Grant No. 22/0651/14/EMR-II, Government of India.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Transient tracking of low and high-order eccentricity-related components in induction motors via TFD tools

NASA Astrophysics Data System (ADS)

Climente-Alarcon, V.; Antonino-Daviu, J.; Riera-Guasp, M.; Pons-Llinares, J.; Roger-Folch, J.; Jover-Rodriguez, P.; Arkkio, A.

2011-02-01

The present work is focused on the diagnosis of mixed eccentricity faults in induction motors via the study of currents demanded by the machine. Unlike traditional methods, based on the analysis of stationary currents (Motor Current Signature Analysis (MCSA)), this work provides new findings regarding the diagnosis approach proposed by the authors in recent years, which is mainly focused on the fault diagnosis based on the analysis of transient quantities, such as startup or plug stopping currents (Transient Motor Current Signature Analysis (TMCSA)), using suitable time-frequency decomposition (TFD) tools. The main novelty of this work is to prove the usefulness of tracking the transient evolution of high-order eccentricity-related harmonics in order to diagnose the condition of the machine, complementing the information obtained with the low-order components, whose transient evolution was well characterised in previous works. Tracking of high-order eccentricity-related harmonics during the transient, through their associated patterns in the time-frequency plane, may significantly increase the reliability of the diagnosis, since the set of fault-related patterns arising after application of the corresponding TFD tool is very unlikely to be caused by other faults or phenomena. Although there are different TFD tools which could be suitable for the transient extraction of these harmonics, this paper makes use of a Wigner-Ville distribution (WVD)-based algorithm in order to carry out the time-frequency decomposition of the startup current signal, since this is a tool showing an excellent trade-off between frequency resolution at both high and low frequencies. Several simulation results obtained with a finite element-based model and experimental results show the validity of this fault diagnosis approach under several faulty and operating conditions. Also, additional signals corresponding to the coexistence of the eccentricity and other non-fault related phenomena making difficult the diagnosis (fluctuating load torque) are included in the paper. Finally, a comparison with an alternative TFD tool - the discrete wavelet transform (DWT) - applied in previous papers, is also carried out in the contribution. The results are promising regarding the usefulness of the methodology for the reliable diagnosis of eccentricities and for their discrimination against other phenomena.

Can a bog drained for forestry be a stronger carbon sink than a natural bog forest?

NASA Astrophysics Data System (ADS)

Hommeltenberg, J.; Schmid, H. P.; Drösler, M.; Werle, P.

2014-07-01

This study compares the CO2 exchange of a natural bog forest, and of a bog drained for forestry in the pre-Alpine region of southern Germany. The sites are separated by only 10 km, they share the same soil formation history and are exposed to the same climate and weather conditions. In contrast, they differ in land use history: at the Schechenfilz site a natural bog-pine forest (Pinus mugo ssp. rotundata) grows on an undisturbed, about 5 m thick peat layer; at Mooseurach a planted spruce forest (Picea abies) grows on drained and degraded peat (3.4 m). The net ecosystem exchange of CO2 (NEE) at both sites has been investigated for 2 years (July 2010-June 2012), using the eddy covariance technique. Our results indicate that the drained, forested bog at Mooseurach is a much stronger carbon dioxide sink (-130 ± 31 and -300 ± 66 g C m-2 a-1 in the first and second year, respectively) than the natural bog forest at Schechenfilz (-53 ± 28 and -73 ± 38 g C m-2 a-1). The strong net CO2 uptake can be explained by the high gross primary productivity of the 44-year old spruces that over-compensates the two-times stronger ecosystem respiration at the drained site. The larger productivity of the spruces can be clearly attributed to the larger plant area index (PAI) of the spruce site. However, even though current flux measurements indicate strong CO2 uptake of the drained spruce forest, the site is a strong net CO2 source when the whole life-cycle since forest planting is considered. It is important to access this result in terms of the long-term biome balance. To do so, we used historical data to estimate the difference between carbon fixation by the spruces and the carbon loss from the peat due to drainage since forest planting. This rough estimate indicates a strong carbon release of +134 t C ha-1 within the last 44 years. Thus, the spruces would need to grow for another 100 years at about the current rate, to compensate the potential peat loss of the former years. In contrast, the natural bog-pine ecosystem has likely been a small but stable carbon sink for decades, which our results suggest is very robust regarding short-term changes of environmental factors.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

PubMed Central

Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-01-01

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. PMID:29621154

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Chang; Liao, XueYang; Li, RuGuan

2015-09-28

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore » on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.« less

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Submicrosecond Power-Switching Test Circuit

NASA Technical Reports Server (NTRS)

Folk, Eric N.

2006-01-01

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Transient Response in a Dendritic Neuron Model for Current Injected at One Branch

PubMed Central

Rinzel, John; Rall, Wilfrid

1974-01-01

Mathematical expressions are obtained for the response function corresponding to an instantaneous pulse of current injected to a single dendritic branch in a branched dendritic neuron model. The theoretical model assumes passive membrane properties and the equivalent cylinder constraint on branch diameters. The response function when used in a convolution formula enables one to compute the voltage transient at any specified point in the dendritic tree for an arbitrary current injection at a given input location. A particular numerical example, for a brief current injection at a branch terminal, illustrates the attenuation and delay characteristics of the depolarization peak as it spreads throughout the neuron model. In contrast to the severe attenuation of voltage transients from branch input sites to the soma, the fraction of total input charge actually delivered to the soma and other trees is calculated to be about one-half. This fraction is independent of the input time course. Other numerical examples, which compare a branch terminal input site with a soma input site, demonstrate that, for a given transient current injection, the peak depolarization is not proportional to the input resistance at the injection site and, for a given synaptic conductance transient, the effective synaptic driving potential can be significantly reduced, resulting in less synaptic current flow and charge, for a branch input site. Also, for the synaptic case, the two inputs are compared on the basis of the excitatory post-synaptic potential (EPSP) seen at the soma and the total charge delivered to the soma. PMID:4424185

Analysis of switching surges generated by current interruption in an energy-storge coil

NASA Astrophysics Data System (ADS)

Chowdhuri, P.

1981-10-01

The transient voltages which are generated when the current in a large magnetic energy storage coil is interruped by a dc vacuum circuit breaker is analyzed. The effect of the various parameters in the circuit on the transient voltage is dicussed. The self inductance of the dump resistor must be minimized to control the generated transient. Contrary to general belief, a capacitor across the coil is not an effective surge suppressor. In fact, the capacitor may excite oscillations of higher magnitude. However, a capacitor, in addition to a surge suppressor, may be used to modify the frequency components of the transient voltage so that these frequency components are not coincident with the natural frequencies of the coil. Otherwise, resonant oscillations inside the coil may attain damaging magnitudes. The capacitor would also reduce the steepness of the wavefront of the transient across the coil, thus reducing the nonlinear voltage distribution inside the coil.

Advances in transient (pulsed) eddy current for inspection of multi-layer aluminum structures in the presence of ferrous fasteners

NASA Astrophysics Data System (ADS)

Desjardins, D. R.; Vallières, G.; Whalen, P. P.; Krause, T. W.

2012-05-01

An experimental investigation of the electromagnetic processes underlying transient (pulsed) eddy current inspection of aircraft wing structures in the vicinity of ferrous fasteners is performed. The separate effects of transient excitation of ferrous fastener and eddy currents induced in the surrounding aluminum structure are explored using a transmit-receive configuration with transient excitation of a steel rod, an aluminum plate with a bore hole and a steel rod through the bore hole. Observations are used to interpret results from a coupled driving and differential coil sensing unit applied to detect fatigue cracks emanating from bolt holes in aluminum structures with ferrous fasteners present. In particular, it is noted that abrupt magnetization of the fastener, by the probe's central driving unit, can transfer flux and consequently, induce strong eddy current responses deep within the aluminum structure in the vicinity of the bore hole. Rotation of the probe, centered over the fastener, permits detection of subsurface discontinuities, such as cracks, by the pair of differentially connected pickup coils.

The Soil Foam Drainage Equation - an alternative model for unsaturated flow in porous media

NASA Astrophysics Data System (ADS)

Assouline, Shmuel; Lehmann, Peter; Hoogland, Frouke; Or, Dani

2017-04-01

The analogy between the geometry and dynamics of wet foam drainage and gravity drainage of unsaturated porous media expands modeling capabilities for capillary flows and supplements the standard Richards equation representation. The governing equation for draining foam (or a soil variant termed the soil foam drainage equation - SFDE) obviates the need for macroscopic unsaturated hydraulic conductivity function by an explicit account of diminishing flow pathway sizes as the medium gradually drains. Potential advantages of the proposed drainage foam formalism include direct description of transient flow without requiring constitutive functions; evolution of capillary cross sections that provides consistent description of self-regulating internal fluxes (e.g., towards field capacity); and a more intuitive geometrical picture of capillary flow across textural boundaries. We will present new and simple analytical expressions for drainage rates and volumes from unsaturated porous media subjected to different boundary conditions that are in good agreement with the numerical solution of the SFDE and experimental results. The foam drainage methodology expands the range of tools available for describing and quantifying unsaturated flows and provides geometrically tractable links between evolution of liquid configuration and flow dynamics in unsaturated porous media. The resulting geometrical representation of capillary drainage could improve understanding of colloid and pathogen transport. The explicit geometrical interpretation of flow pathways underlying the hydraulic functions used by the Richards equation offers new insights that benefit both approaches.

Real-time detection of transients in OGLE-IV with application of machine learning

NASA Astrophysics Data System (ADS)

Klencki, Jakub; Wyrzykowski, Łukasz

2016-06-01

The current bottleneck of transient detection in most surveys is the problem of rejecting numerous artifacts from detected candidates. We present a triple-stage hierarchical machine learning system for automated artifact filtering in difference imaging, based on self-organizing maps. The classifier, when tested on the OGLE-IV Transient Detection System, accepts 97% of real transients while removing up to 97.5% of artifacts.

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

A prospective randomized study of use of drain versus no drain after burr-hole evacuation of chronic subdural hematoma.

PubMed

Singh, Amit Kumar; Suryanarayanan, Bhaskar; Choudhary, Ajay; Prasad, Akhila; Singh, Sachin; Gupta, Laxmi Narayan

2014-01-01

Chronic subdural hematoma (CSDH) recurs after surgical evacuation in 5-30% of patients. Inserting subdural drain might reduce the recurrence rate, but is not commonly practiced. There are few prospective studies to evaluate the effect of subdural drains. A prospective randomized study to investigate the effect of subdural drains in the on recurrence rates and clinical outcome following burr-hole drainage (BHD) of CSDH was undertaken. During the study period, 246 patients with CSDH were assessed for eligibility. Among 200 patients fulfilling the eligibility criteria, 100 each were assigned to "drain group" (drain inserted into the subdural space following BHD) and "without drain group" (subdural drain was not inserted following BHD) using random allocation software. The primary end point was recurrence needing re-drainage up to a period of 6 months from surgery. Recurrence occurred in 9 of 100 patients with a drain, and 26 of 100 patients in without drain group (P = 0.002). The mortality was 5% in patients with drain and 4% in patients without drain group (P = 0.744). The medical and surgical complications were comparable between the two study groups. Use of a subdural drain after burr-hole evacuation of a CSDH reduces the recurrence rate and is not associated with increased complications.

Generation of T-cells reactive to the poorly immunogenic B16-BL6 melanoma with efficacy in the treatment of spontaneous metastases.

PubMed

Geiger, J D; Wagner, P D; Cameron, M J; Shu, S; Chang, A E

1993-04-01

The B16-BL6 (BL6) melanoma is a poorly immunogenic murine tumor that is highly invasive and spontaneously metastasizes from the primary site. Utilizing an established anti-CD3/interleukin-2 (IL-2) culture procedure, we have previously reported that lymph nodes (LNs) draining immunogenic murine sarcomas contained preeffector cells that could be activated to differentiate into therapeutic effector cells for adoptive immunotherapy. By contrast, LNs draining the poorly immunogenic BL6 melanoma were found not to be a reliable source of preeffector cells. Instead, sensitization of preeffector cells reactive to BL6 required the subcutaneous inoculation of tumor admixed with Corynebacterium parvum. LN cells draining these vaccination sites demonstrated therapeutic efficacy only after subsequent anti-CD3/IL-2 activation. The sensitization of preeffector cells was dependent on the presence of tumor antigen and an optimal dose of C. parvum (< or = 50 micrograms). Furthermore, kinetic analysis revealed that the preeffector response was transient after tumor vaccination. The therapeutic efficacy of anti-CD3/IL-2 activated LN cells was further evaluated in the treatment of spontaneous macroscopic BL6 visceral metastases. Spontaneous visceral metastases were induced in animals by inoculation with BL6 tumor in the footpad followed by amputation of the primary tumor 3 weeks later. The systemic transfer of 10(8) anti-CD3/IL-2 activated T-cells and the concomitant intraperitoneal administration of subtherapeutic doses of IL-2 1 week after amputation cured 50% of the animals and prolonged median survival time (MST) to > 140 days. All mice except one that received no treatment or was treated with IL-2 alone succumbed to visceral metastases with an MST of approximately 23 days. This study characterizes a model whereby the weak immune response to the BL6 melanoma can be positively or negatively modulated for the generation of antitumor reactive T-cells useful in adoptive immunotherapy.

Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms

NASA Astrophysics Data System (ADS)

Shen, Ming-Yi

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples. We have successfully shown that the kinetic monte carlo (KMC) I/I simulation can precisely model both the silicon amorphization and the arsenic distribution in the fin by comparing the KMC simulation results with TEM images. The results of the KMC I/I simulation show that at high dose rate more activated arsenic dopants were in the source-drain extension (SDE) region. This finding matches with the increased silicon amorphization caused by the high dose-rate I/I, given that the arsenic atoms could be more easily activated by the solid phase epitaxial regrowth process. This increased silicon amorphization led to not only higher arsenic activation near the spacer edge, but also less arsenic atoms straggling into the channel. Hence, it is possible to improve the throughput of the ion implanter when the dopants are implanted at high dose rate if the same doping level with a lower wafer dose can be achieved. In addition, the leakage current might also be reduced due to less undesired dopants in the channel. However, the twin defects from the problematic Si{111} recrystallization is well-known to cause excessive leakage current to the FinFET. This drawback can offset the benefits of the high dose rate I/I mentioned above. This work produced the first attempt at simulating the electrical impact of twin defects on advanced-node (10 nm) FinFET device performance. It was found that the high dose-rate I/I causes more twin defects in the silicon fin, and the physical locations of these defects were close to the channel. The defects undesirably induced trap-assisted band-to-band tunneling near the drain, which increased the leakage current. This issue could be mitigated by using asymmetrical gate overlap/underlap design or thicker spacer for SDE I/I so that the twin defects are not located in the depletion region near the drain.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Chest drainage systems in use

PubMed Central

Zisis, Charalambos; Tsirgogianni, Katerina; Lazaridis, George; Lampaki, Sofia; Baka, Sofia; Mpoukovinas, Ioannis; Karavasilis, Vasilis; Kioumis, Ioannis; Pitsiou, Georgia; Katsikogiannis, Nikolaos; Tsakiridis, Kosmas; Rapti, Aggeliki; Trakada, Georgia; Karapantzos, Ilias; Karapantzou, Chrysanthi; Zissimopoulos, Athanasios; Zarogoulidis, Konstantinos

2015-01-01

A chest tube is a flexible plastic tube that is inserted through the chest wall and into the pleural space or mediastinum. It is used to remove air in the case of pneumothorax or fluid such as in the case of pleural effusion, blood, chyle, or pus when empyema occurs from the intrathoracic space. It is also known as a Bülau drain or an intercostal catheter. Insertion of chest tubes is widely performed by radiologists, pulmonary physicians and thoracic surgeons. Large catheters or small catheters are used based on each situation that the medical doctor encounters. In the current review we will focus on the chest drain systems that are in use. PMID:25815304

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

PubMed Central

Aiello, Orazio; Fiori, Franco

2013-01-01

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. PMID:23385408

Selective block of late Na+ current by local anaesthetics in rat large sensory neurones

PubMed Central

Baker, Mark D

2000-01-01

The actions of lignocaine and benzocaine on transient and late Na+ current generated by large diameter (⩾50 μm) adult rat dorsal root ganglion neurones, were studied using patch-clamp techniques.Both drugs blocked whole-cell late Na+ current in a concentration-dependent manner. At 200 ms following the onset of a clamp step from −110 to −40 mV, the apparent K for block of late Na+ current by lignocaine was 57.8±15 μM (mean±s.e.mean, n=4). The value for benzocaine was 24.9±3.3 μM, (mean±s.e.mean, n=3).The effect of lignocaine on transient current, in randomly selected neurones, appeared variable (n=8, half-block from ∼50 to 400 μM). Half-block by benzocaine was not attained, but both whole-cell (n=11) and patch data suggested a high apparent K,>250 μM. Transient current always remained after late current was blocked.The voltage-dependence of residual late current steady-state inactivation was not shifted by 20 μM benzocaine (n=3), whereas 200 μM benzocaine shifted the voltage-dependence of transient current steady-state inactivation by −18.7±5.9 mV (mean±s.e.mean, n=4).In current-clamp, benzocaine (250 μM) could block subthreshold, voltage-dependent inward current, increasing the threshold for eliciting action potentials, without preventing their generation (n=2).Block of late Na+ current by systemic local anaesthetic may play a part in preventing ectopic impulse generation in sensory neurones. PMID:10780966

THE URBAN STREAM SYNDROME: CURRENT KNOWLEDGE AND THE SEARCH FOR A CURE

EPA Science Inventory

The term "urban stream syndrome" describes the consistently observed ecological degradation of streams draining urban land. This paper reviews recent literature to describe symptoms of the syndrome, explores mechanisms driving the syndrome, and identifies appropriate goals and me...

Bank storage buffers rivers from saline regional groundwater: an example from the Avon River Australia

NASA Astrophysics Data System (ADS)

Gilfedder, Benjamin; Hofmann, Harald; Cartwrighta, Ian

2014-05-01

Groundwater-surface water interactions are often conceptually and numerically modeled as a two component system: a groundwater system connected to a stream, river or lake. However, transient storage zones such as hyporheic exchange, bank storage, parafluvial flow and flood plain storage complicate the two component model by delaying the release of flood water from the catchment. Bank storage occurs when high river levels associated with flood water reverses the hydraulic gradient between surface water and groundwater. River water flows into the riparian zone, where it is stored until the flood water recede. The water held in the banks then drains back into the river over time scales ranging from days to months as the hydraulic gradient returns to pre-flood levels. If the frequency and amplitude of flood events is high enough, water held in bank storage can potentially perpetually remain between the regional groundwater system and the river. In this work we focus on the role of bank storage in buffering river salinity levels against saline regional groundwater on lowland sections of the Avon River, Victoria, Australia. We hypothesize that the frequency and magnitude of floods will strongly influence the salinity of the stream water as banks fill and drain. A bore transect (5 bores) was installed perpendicular to the river and were instrumented with head and electrical conductivity loggers measuring for two years. We also installed a continuous 222Rn system in one bore. This data was augmented with long-term monthly EC from the river. During high rainfall events very fresh flood waters from the headwaters infiltrated into the gravel river banks leading to a dilution in EC and 222Rn in the bores. Following the events the fresh water drained back into the river as head gradients reversed. However the bank water salinities remained ~10x lower than regional groundwater levels during most of the time series, and only slightly above river water. During 2012 SE Australia experienced a prolonged summer drought. A significant increase in EC was observed in the bores towards the end of the summer, which suggest that the lack of bank recharge from the river resulted in draining of the banks and connection between the regional groundwater and the river. The long-term river salinity dataset showed that when flow events are infrequent and of low magnitude (i.e. drought conditions), salinities increase significantly. Similarly this is thought to be due to draining of the banks and connection with the regional groundwater system. Thus an increase in extended dry periods is expected to result in higher salinities in Australian waterways as the climate changes.

Transient analysis of a solid oxide fuel cell stack with crossflow configuration

NASA Astrophysics Data System (ADS)

Yuan, P.; Liu, S. F.

2018-05-01

This study investigates the transient response of the cell temperature and current density of a solid oxide fuel cell having 6 stacks with crossflow configuration. A commercial software repeatedly solves the governing equations of each stack, and get the convergent results of the whole SOFC stack. The preliminary results indicate that the average current density of each stack is similar to others, so the power output between different stacks are uniform. Moreover, the average cell temperature among stacks is different, and the central stacks have higher temperature due to its harder heat dissipation. For the operating control, the cell temperature difference among stacks is worth to concern because the temperature difference will be over 10 °C in the analysis case. The increasing of the inlet flow rate of the fuel and air will short the transient state, increase the average current density, and drop the cell temperature difference among the stacks. Therefore, the inlet flow rate is an important factor for transient performance of a SOFC stack.

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

Transient deformation following the 30 January 1997 dike intrusion at Kīlauea volcano, Hawai'i

NASA Astrophysics Data System (ADS)

Desmarais, Emily K.; Segall, Paul

2007-02-01

On 30 January 1997 an intrusion on Kīlauea volcano opened a new fissure within the East Rift Zone (ERZ) at Nāpau Crater, 3 km uprift from the ongoing eruptions at Pu’u ’Ō’ō. The fissure eruption lasted 22 h and opened a 5.1 km long, nearly vertical dike 1.9 m, extending from the surface to a depth of 2.4 km (Owen et al. 2000b). During the eruption, the lava pond at Pu’u ’Ō’ō drained, and eruptions ceased there. Pu’u ’Ō’ō eventually refilled in late February and eruptions resumed there on 28 March 1997. Continuous GPS data show a large transient following the 30 January 1997 dike intrusion. After lengthening 40 cm during the initial eruption, the baseline between two stations spanning the ERZ lengthened an additional 10 cm over the following 6 months. A coastal station KAEP also exhibited transient deformation, as it continued to move southward (5 cm) over the same 6-month period. The baseline between two stations spanning Kīlauea’s summit caldera contracted sharply during the eruption, but gradually recovered to slightly longer than its previous length 2 months after the intrusion. We use the extended network inversion filter (McGuire and Segall 2003) to invert continuous GPS data for volume change of a spherical pressure source under Kīlauea’s summit, opening distribution on a nearly vertical dike in the ERZ and potential slip on a decollement 9 km beneath the south flank. Following the 30 January intrusion, rift extension continued below the initial dike intrusion for the duration of the transient. Decollement slip, regardless of its assumed depth, is not required to fit the data. The modeled transient summit reinflation and rift opening patterns under Nāpau crater coincide with changes in observed behavior of Pu’u ’Ō’ō’s lava pond. Rift opening accelerated while Pu’u ’Ō’ō eruptions paused and began to decelerate after the lava pond reappeared nearly a month after the Nāpau eruption. The transient deformation is interpreted as resulting from shallow accommodation of the new dike volume.

Modeling of coastal water contamination in Fortaleza (Northeastern Brazil).

PubMed

Pereira, S P; Rosman, P C C; Alvarez, C; Schetini, C A F; Souza, R O; Vieira, R H S F

2015-01-01

An important tool in environmental management projects and studies due to the complexity of environmental systems, environmental modeling makes it possible to integrate many variables and processes, thereby providing a dynamic view of systems. In this study the bacteriological quality of the coastal waters of Fortaleza (a state capital in Northeastern Brazil) was modeled considering multiple contamination sources. Using the software SisBaHiA, the dispersion of thermotolerant coliforms and Escherichia coli from three sources of contamination (local rivers, storm drains and submarine outfall) was analyzed. The models took into account variations in bacterial decay due to solar radiation and other environmental factors. Fecal pollution discharged from rivers and storm drains is transported westward by coastal currents, contaminating strips of beach water to the left of each storm drain or river. Exception to this condition only occurs on beaches protected by the breakwater of the harbor, where counterclockwise vortexes reverse this behavior. The results of the models were consistent with field measurements taken during the dry and the rainy season. Our results show that the submarine outfall plume was over 2 km from the nearest beach. The storm drains and the Maceió stream are the main factors responsible for the poor water quality on the waterfront of Fortaleza. The depollution of these sources would generate considerable social, health and economic gains for the region.

Effects of funnel web spider toxin on Ca2+ currents in neurohypophysial terminals.

PubMed

Wang, G; Lemos, J R

1994-11-14

Funnel web spider toxin (FTX) is reportedly a specific blocker of P-type Ca2+ channels. The effects of FTX on the Ca2+ currents of isolated neurohypophysial nerve terminals of the rat were investigated using the 'whole-cell' patch-clamp technique. Both the transient and long-lasting Ca2+ current components were maximally elicited by depolarization from a holding potential equal to the normal terminal resting potential (-90 mV). Externally applied FTX inhibited the high-voltage-threshold, transient component of the Ca2+ current in a concentration-dependent manner, with a half-maximal inhibition at a dilution of approximately 1:10000. FTX also shifted the peak current of the I-V relationship by +10 mV. The long-lasting Ca2+ current component, which is sensitive to L-type Ca2+ channel blockers, was insensitive to FTX. The transient current, which is sensitive to omega-conotoxin GVIA, was completely blocked by FTX. These results suggest that there could be a novel, inactivating Ca2+ channel in the rat neurohypophysial terminals which is affected by both N-type and P-type Ca2+ channel blockers.

Longitudinal gradient coil optimization in the presence of transient eddy currents.

PubMed

Trakic, A; Liu, F; Lopez, H Sanchez; Wang, H; Crozier, S

2007-06-01

The switching of magnetic field gradient coils in magnetic resonance imaging (MRI) inevitably induces transient eddy currents in conducting system components, such as the cryostat vessel. These secondary currents degrade the spatial and temporal performance of the gradient coils, and compensation methods are commonly employed to correct for these distortions. This theoretical study shows that by incorporating the eddy currents into the coil optimization process, it is possible to modify a gradient coil design so that the fields created by the coil and the eddy currents combine together to generate a spatially homogeneous gradient that follows the input pulse. Shielded and unshielded longitudinal gradient coils are used to exemplify this novel approach. To assist in the evaluation of transient eddy currents induced within a realistic cryostat vessel, a low-frequency finite-difference time-domain (FDTD) method using the total-field scattered-field (TFSF) scheme was performed. The simulations demonstrate the effectiveness of the proposed method for optimizing longitudinal gradient fields while taking into account the spatial and temporal behavior of the eddy currents.

Properties of whole cell currents in isolated olfactory neurons from the chilean toad Caudiverbera caudiverbera.

PubMed

Delgado, R; Labarca, P

1993-06-01

Isolated olfactory neurons from the chilean toad Caudiverbera caudiverbera were found to possess a same set of currents. Outward currents, made of a delayed rectifier and a Ca(2+)-dependent component, were blocked by replacing K+ by Cs+ in the patch pipette, in the presence of millimolar concentrations of tetraethylammonium and 4-aminopyridine in the external solution. Inward currents were made of a transient and a maintained component. The transient was abolished in the absence of external Na+ and was blocked by tetrodotoxin, with an apparent dissociation constant (KDapp) of 25.4 +/- 0.3 nM. The maintained inward currents were suppressed on removing external Ca2+, could be carried also by Ba2+, and were selectively blocked by Cd2+ (KDapp = 3.2 +/- 1.3 microM). A variety of agents found to block the maintained Ca2+ inward currents, including Co2+ and Ni2+, at millimolar concentrations, and nifedipine, verapamil, amiloride, and the amiloride analogue benzamil, at micromolar concentrations, were also effective in either modifying the gating of, or in blocking, the transient inward currents.

Analysis of transient state in HTS tapes under ripple DC load current

NASA Astrophysics Data System (ADS)

Stepien, M.; Grzesik, B.

2014-05-01

The paper concerns the analysis of transient state (quench transition) in HTS tapes loaded with the current having DC component together with a ripple component. Two shapes of the ripple were taken into account: sinusoidal and triangular. Very often HTS tape connected to a power electronic current supply (i.e. superconducting coil for SMES) that delivers DC current with ripples and it needs to be examined under such conditions. Additionally, measurements of electrical (and thermal) parameters under such ripple excitation is useful to tape characterization in broad range of load currents. The results presented in the paper were obtained using test bench which contains programmable DC supply and National Instruments data acquisition system. Voltage drops and load currents were measured vs. time. Analysis of measured parameters as a function of the current was used to tape description with quench dynamics taken into account. Results of measurements were also used to comparison with the results of numerical modelling based on FEM. Presented provisional results show possibility to use results of measurements in transient state to prepare inverse models of superconductors and their detailed numerical modelling.

Thermosensitive transient receptor potential channels (thermo-TRPs) in human corneal epithelial cells

PubMed Central

Mergler, Stefan; Garreis, Fabian; Sahlmüller, Monika; Reinach, Peter S.; Paulsen, Friedrich; Pleyer, Uwe

2010-01-01

Thermosensitive transient receptor potential proteins (TRPs) such as TRPV1-TRPV4 are all heat-activated non-selective cation channels that are modestly permeable to Ca2+. TRPV1, TRPV3 and TRPV4 functional expression were previously identified in human corneal epithelial cells (HCEC). However, the membrane currents were not described underlying their activation by either selective agonists or thermal variation. This study characterized the membrane currents and [Ca 2+]i transients induced by thermal and agonist TRPV1 and 4 stimulation. TRPV1 and 4 expressions were confirmed by RT-PCR and TRPV2 transcripts were also detected. In fura2-loaded HCEC, a TRPV1-3 selective agonist, 100 µM 2-aminoethoxydiphenyl borate (2-APB), induced intracellular Ca2+ transients and an increase in non-selective cation outward currents that were suppressed by ruthenium-red (RuR) (10–20 µM), a nonselective TRPV channel blocker. These changes were also elicited by rises in ambient temperature from 25 °C to over 40 °C. RuR (5 µM) and a selective TRPV1 channel blocker capsazepine (CPZ) (10 µM) or another related blocker, lanthanum chloride (La3+) (100 µM) suppressed these temperature-induced Ca2+ increases. Planar patch-clamp technique was used to characterize the currents underlying Ca2+ transients. Increasing the temperature to over 40 °C induced reversible rises in non-selective cation currents. Moreover, a hypotonic challenge (25 %) increased non-selective cation currents confirming TRPV4 activity. We conclude that HCEC possess in addition to thermo-sensitive TRPV3 activity TRPV1, TRPV2 and TRPV4 activity. Their activation confers temperature sensitivity at the ocular surface, which may protect the cornea against such stress. PMID:21506114

Simulation of transient effects in the heavy ion fusion injectors

NASA Astrophysics Data System (ADS)

Chen, Yu-Jiuan; Hewett, D. W.

1993-05-01

We have used the 2-D PIC code, GYMNOS, to study the transient behaviors in the Heavy Ion Fusion (HIF) injectors. GYMNOS simulations accurately provide the steady state Child-Langmuir current and the beam transient behavior within a planar diode. The simulations of the LBL HIF ESAC injector experiments agree well with the experimental data and EGUN steady state results. Simulations of the nominal HIF injectors have revealed the need to design the accelerating electrodes carefully to control the ion beam current, particularly the ion loss at the end of the bunch as the extraction voltage is reduced.

THE PANCHROMATIC HUBBLE ANDROMEDA TREASURY. VIII. A WIDE-AREA, HIGH-RESOLUTION MAP OF DUST EXTINCTION IN M31

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dalcanton, Julianne J.; Fouesneau, Morgan; Weisz, Daniel R.

We map the distribution of dust in M31 at 25 pc resolution using stellar photometry from the Panchromatic Hubble Andromeda Treasury survey. The map is derived with a new technique that models the near-infrared color–magnitude diagram (CMD) of red giant branch (RGB) stars. The model CMDs combine an unreddened foreground of RGB stars with a reddened background population viewed through a log-normal column density distribution of dust. Fits to the model constrain the median extinction, the width of the extinction distribution, and the fraction of reddened stars in each 25 pc cell. The resulting extinction map has a factor ofmore » ≳4 times better resolution than maps of dust emission, while providing a more direct measurement of the dust column. There is superb morphological agreement between the new map and maps of the extinction inferred from dust emission by Draine et al. However, the widely used Draine and Li dust models overpredict the observed extinction by a factor of ∼2.5, suggesting that M31's true dust mass is lower and that dust grains are significantly more emissive than assumed in Draine et al. The observed factor of ∼2.5 discrepancy is consistent with similar findings in the Milky Way by the Plank Collaboration et al., but we find a more complex dependence on parameters from the Draine and Li dust models. We also show that the the discrepancy with the Draine et al. map is lowest where the current interstellar radiation field has a harder spectrum than average. We discuss possible improvements to the CMD dust mapping technique, and explore further applications in both M31 and other galaxies.« less

Current and anticipated use of thermal-hydraulic codes for BWR transient and accident analyses in Japan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arai, Kenji; Ebata, Shigeo

1997-07-01

This paper summarizes the current and anticipated use of the thermal-hydraulic and neutronic codes for the BWR transient and accident analyses in Japan. The codes may be categorized into the licensing codes and the best estimate codes for the BWR transient and accident analyses. Most of the licensing codes have been originally developed by General Electric. Some codes have been updated based on the technical knowledge obtained in the thermal hydraulic study in Japan, and according to the BWR design changes. The best estimates codes have been used to support the licensing calculations and to obtain the phenomenological understanding ofmore » the thermal hydraulic phenomena during a BWR transient or accident. The best estimate codes can be also applied to a design study for a next generation BWR to which the current licensing model may not be directly applied. In order to rationalize the margin included in the current BWR design and develop a next generation reactor with appropriate design margin, it will be required to improve the accuracy of the thermal-hydraulic and neutronic model. In addition, regarding the current best estimate codes, the improvement in the user interface and the numerics will be needed.« less

Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

NASA Astrophysics Data System (ADS)

Lee, J.; Esayan, S.; Prohaska, J.; Safari, A.

1994-01-01

The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (˜hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.

Timing of Re-Transfusion Drain Removal Following Total Knee Replacement

PubMed Central

Leeman, MF; Costa, ML; Costello, E; Edwards, D

2006-01-01

INTRODUCTION The use of postoperative drains following total knee replacement (TKR) has recently been modified by the use of re-transfusion drains. The aim of our study was to investigate the optimal time for removal of re-transfusion drains following TKR. PATIENTS AND METHODS The medical records of 66 patients who had a TKR performed between October 2003 and October 2004 were reviewed; blood drained before 6 h and the total volume of blood drained was recorded. RESULTS A total of 56 patients had complete records of postoperative drainage. The mean volume of blood collected in the drain in the first 6 h was 442 ml. The mean total volume of blood in the drain was 595 ml. Therefore, of the blood drained, 78% was available for transfusion. CONCLUSION Re-transfusion drains should be removed after 6 h, when no further re-transfusion is permissible. PMID:16551400

A Brief History of Two Common Surgical Drains.

PubMed

Meyerson, Joseph M

2016-01-01

The use of surgical drains is commonplace in all types of surgical procedures, and rarely do we take the time to contemplate or investigate the origins of these critical devices. Every surgeon should be familiar with the Jackson-Pratt drain and Blake drain, 2 of the most frequently used closed suction, negative-pressure drainage devices in surgery. These drains are used throughout the body in a wide variety of surgical procedures. The development and differences between these 2 devices are seldom known by the practicing surgeon. In this article, we delve into the ancient history of drains, the creation and alterations of the closed suction, negative-pressure drain that paved the way for the Jackson-Pratt and Blake drain. Finally, we will discuss the variety of reservoirs that attach to these drains and the origin of the well-known adage of when to pull a drain.

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Advances in electrometer vacuum tube design

NASA Technical Reports Server (NTRS)

1970-01-01

Single-ended, miniature-cathode tube with a relatively low grid current level is constructed. Adequate cathode temperature at relatively low heater power drain is provided by designing the supporting spacers to provide a square cathode hole. Method of assembling the mount and bonding the elements is discussed.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

NASA Astrophysics Data System (ADS)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

The dynamics of sediment size and transient erosional signals in heterogeneous lithologies

NASA Astrophysics Data System (ADS)

Lyons, N. J.; Gasparini, N. M.; Crosby, B. T.; Wehrs, K.; Willenbring, J. K.

2017-12-01

Sediment supply and transport dynamics convey, transform, and destroy climatic and tectonic signals in channels and depositional landforms. The South Fork Eel River (SFER) in the northern California Coast Ranges, USA exhibits characteristics suggestive of transient landscape adjustment: strath terraces, knickpoints, and headwater terrain eroding more slowly than downstream areas. A tectonically-induced uplift wave is commonly invoked as the driver of transience in this region. The wave is attributed to the northward migration of the Mendocino Triple Junction (MTJ). Nested basin-mean erosion rates calculated from 10Be detrital quartz sand increase down the mainstem of the SFER, roughly coinciding with the direction of MTJ migration. This erosion trend is attributed to the proportion of adjusted and unadjusted landscape portions upstream of the locations where the nested 10Be samples were collected. Adjusted and unadjusted landscape portions are separated by a broad knickzone that contains 28% of relief along the mainstem. Knickzone propagation and considerable stream incision is suggested by projection of the upper SFER above the knickzone through the highest flight of strath terraces. Field observations and outcomes of numerical simulations using the Landlab modeling framework are incompatible with uplift modeled as a wave. Alternative uplift and variable sediment flux scenarios more reliably predict the pattern of terraces, knickpoints, and accelerated erosion. In the natural landscape, landforms and erosion rates follow the patterns expected for transient erosion along the mainstem, although a local base level lowering signal is not resolvable in many tributaries. Topographic relief, presence of knickpoints, and rock properties differ in the SFER tributaries. The tributaries draining mélange are over-steepened by boulders detached from hillslopes by earthflows. Here, we propose a framework in which rock properties and sediment size are a key control upon preservation of a base level change signal in low order streams. This result implies that transient erosion signals inferred using topography can be transformed or destroyed in certain lithologies, complicating efforts to infer climatic and tectonic history from topography.

A study of the complications of small bore 'Seldinger' intercostal chest drains.

PubMed

Davies, Helen E; Merchant, Shairoz; McGown, Anne

2008-06-01

Use of small bore chest drains (<14F), inserted via the Seldinger technique, has increased globally over the last few years. They are now used as first line interventions in most acute medical situations when thoracostomy is required. Limited data are available on the associated complications. In this study, the frequency of complications associated with 12F chest drains, inserted using the Seldinger technique, was quantified. A retrospective case note audit was performed of consecutive patients requiring pleural drainage over a 12-month period. One hundred consecutive small bore Seldinger (12F) chest drain insertions were evaluated. Few serious complications occurred. However, 21% of the chest drains were displaced ('fell out') and 9% of the drains became blocked. This contributed to high morbidity rates, with 13% of patients requiring repeat pleural procedures. The frequency of drain blockage in pleural effusion was reduced by administration of regular normal saline drain flushes (odds ratio for blockage in flushed drains compared with non-flushed drains 0.04, 95% CI: 0.01-0.37, P < 0.001). Regular chest drain flushes are advocated in order to reduce rates of drain blockage, and further studies are needed to determine optimal fixation strategies that may reduce associated patient morbidity.

Comparison of a large and small-calibre tube drain for managing spontaneous pneumothoraces.

PubMed

Benton, Ian J; Benfield, Grant F A

2009-10-01

To compare treatment success of large- and small-bore chest drains in the treatment of spontaneous pneumothoraces the case-notes were reviewed of those admitted to our hospital with a total of 73 pneumothoraces and who were treated by trainee doctors of varying experience. Both a large- and a small-bore intercostal tube drain system were in use during the two-year period reviewed. Similar pneumothorax profile and numbers treated with both drains were recorded, resulting in a similar drain time and numbers of successful and failed re-expansion of pneumothoraces. Successful pneumothorax resolution was the same for both drain types and the negligible tube drain complications observed with the small-bore drain reflected previously reported experiences. However the large-bore drain was associated with a high complication rate (32%) with more infectious complications (24%). The small-bore drain was prone to displacement (21%). There was generally no evidence of an increased failure and morbidity, reflecting poorer expertise, in the non-specialist trainees managing the pneumothoraces. A practical finding however was that in those large pneumothoraces where re-expansion failed, the tip of the drain had not been sited at the apex of the pleural cavity irrespective of the drain type inserted.

Preclinical safety study of a recombinant Streptococcus pyogenes vaccine formulated with aluminum adjuvant.

PubMed

HogenEsch, Harm; Dunham, Anisa; Burlet, Elodie; Lu, Fangjia; Mosley, Yung-Yi C; Morefield, Garry

2017-02-01

A recombinant vaccine composed of a fusion protein formulated with aluminum hydroxide adjuvant is under development for protection against diseases caused by Streptococcus pyogenes. The safety and local reactogenicity of the vaccine was assessed by a comprehensive series of clinical, pathologic and immunologic tests in preclinical experiments. Outbred mice received three intramuscular injections of 1/5th of the human dose (0.1 ml) and rabbits received two injections of the full human dose. Control groups received adjuvant or protein antigen. The vaccine did not cause clinical evidence of systemic toxicity in mice or rabbits. There was a transient increase of peripheral blood neutrophils after the third vaccination of mice. In addition, the concentration of acute phase proteins serum amyloid A and haptoglobin was significantly increased 1 day after injection of the vaccine in mice. There was mild transient swelling and erythema of the injection site in both mice and rabbits. Treatment-related pathology was limited to inflammation at the injection site and accumulation of adjuvant-containing macrophages in the draining lymph nodes. In conclusion, the absence of clinical toxicity in two animal species suggest that the vaccine is safe for use in a phase I human clinical trial. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Do Magnetic Fields Drive High-Energy Explosive Transients?

NASA Astrophysics Data System (ADS)

Mundell, Carole

2017-10-01

I will review the current state-of-the-art in real-time, rapid response optical imaging and polarimetric followup of transient sources such as Gamma Ray Bursts. I will interpret current results within the context of the external shock model and present predictions for future mm- and cm-wave radio observatories. Recent observational results from new radio pilot studies will also be presented.

Technical Note: MR-visualization of interventional devices using transient field alterations and balanced steady-state free precession imaging.

PubMed

Eibofner, Frank; Martirosian, Petros; Würslin, Christian; Graf, Hansjörg; Syha, Roland; Clasen, Stephan

2015-11-01

In interventional magnetic resonance imaging, instruments can be equipped with conducting wires for visualization by current application. The potential of sequence triggered application of transient direct currents in balanced steady-state free precession (bSSFP) imaging is demonstrated. A conductor and a modified catheter were examined in water phantoms and in an ex vivo porcine liver. The current was switched by a trigger pulse in the bSSFP sequence in an interval between radiofrequency pulse and signal acquisition. Magnitude and phase images were recorded. Regions with transient field alterations were evaluated by a postprocessing algorithm. A phase mask was computed and overlaid with the magnitude image. Transient field alterations caused continuous phase shifts, which were separated by the postprocessing algorithm from phase jumps due to persistent field alterations. The overlaid images revealed the position of the conductor. The modified catheter generated visible phase offset in all orientations toward the static magnetic field and could be unambiguously localized in the ex vivo porcine liver. The application of a sequence triggered, direct current in combination with phase imaging allows conspicuous localization of interventional devices with a bSSFP sequence.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

NASA Astrophysics Data System (ADS)

Huong, Tran Thi Thu; Matsumoto, Kazuhiko; Moriya, Masataka; Shimada, Hiroshi; Kimura, Yasuo; Hirano-Iwata, Ayumi; Mizugaki, Yoshinao

2017-08-01

We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current-voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET.

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

NASA Astrophysics Data System (ADS)

Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

2017-02-01

In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Fabrication and Electrical Characterization of Deep-Submicron Trench-Isolated CMOS Device Structures.

NASA Astrophysics Data System (ADS)

Perera, Asanga Hiran

The magnitude of the extrinsic parasitic MOSFET series resistance was experimentally evaluated in the deep -submicron domain and its consequence on device performance was determined. The series resistance of depletion mode MOSFET test structures were measured for source-drain sizes as small as 0.2 μm by 0.3 μm at room temperature and 100^ circK. To build the test structures a multilevel -full electron beam lithography fabrication process was developed with a pattern overlay accuracy of 75 nm. A new positive tone novalac resist, SYSTEM-9, was developed for electron beam application. The resist had moderate sensitivity, 19-30 muC/cm ^2, and a contrast up to 14. Interrupted development and reduced developer temperature resulted in contrast enhancements of up to 125%. SYSTEM-9 had a two or three times better dry etch resistance than PMMA. A shallow trench isolation technology capable of defining 0.2 μm wide active areas was developed. A rapid thermal annealing based silicidation scheme using TiSi_2 was established. MOSFET sidewall spacer formation using PECVD SiO_2 was calibrated. Antimony and gallium were investigated as possible alternatives to arsenic and boron, respectively, and well behaved substrate diodes were successfully fabricated. Two new patterning techniques for the metal bi-layer metalization of TiW and Al, based on liftoff and reactive ion etching, were developed. The source drain resistance of the test structures was measured at room temperature and at 100^ circK. An LN_2 flushed cold chuck for low temperature device probing was designed and constructed. The temperature dependence of the current voltage characteristics and the extracted series resistance proved that current flow in the contacts was tunneling dominated. The extrinsic source-drain resistance increased rapidly as the contact size decreased below 0.5 mum, and showed an almost two order of magnitude change, when the source-drain area was reduced from 2 x 1.7 mum^2 to 0.2 x 0.3 mum^2 . The effect of this resistance increase on a CMOS inverter switching speed was estimated. A first order empirical model to predict the series resistance was also formulated. Good correspondence was observed between results from the device simulator PISCES-2B and measured data for larger source-drain sizes.

Distinct Neural Circuits Support Transient and Sustained Processes in Prospective Memory and Working Memory

PubMed Central

West, Robert; Braver, Todd

2009-01-01

Current theories are divided as to whether prospective memory (PM) involves primarily sustained processes such as strategic monitoring, or transient processes such as the retrieval of intentions from memory when a relevant cue is encountered. The current study examined the neural correlates of PM using a functional magnetic resonance imaging design that allows for the decomposition of brain activity into sustained and transient components. Performance of the PM task was primarily associated with sustained responses in a network including anterior prefrontal cortex (lateral Brodmann area 10), and these responses were dissociable from sustained responses associated with active maintenance in working memory. Additionally, the sustained responses in anterior prefrontal cortex correlated with faster response times for prospective responses. Prospective cues also elicited selective transient activity in a region of interest along the right middle temporal gyrus. The results support the conclusion that both sustained and transient processes contribute to efficient PM and provide novel constraints on the functional role of anterior PFC in higher-order cognition. PMID:18854581

Proton-Mediated Block of Ca2+ Channels during Multivesicular Release Regulates Short-Term Plasticity at an Auditory Hair Cell Synapse

PubMed Central

Cho, Soyoun

2014-01-01

Synaptic vesicles release both neurotransmitter and protons during exocytosis, which may result in a transient acidification of the synaptic cleft that can block Ca2+ channels located close to the sites of exocytosis. Evidence for this effect has been reported for retinal ribbon-type synapses, but not for hair cell ribbon synapses. Here, we report evidence for proton release from bullfrog auditory hair cells when they are held at more physiological, in vivo–like holding potentials (Vh = −60 mV) that facilitate multivesicular release. During paired recordings of hair cells and afferent fibers, L-type voltage-gated Ca2+ currents showed a transient block, which was highly correlated with the EPSC amplitude (or the amount of glutamate release). This effect was masked at Vh = −90 mV due to the presence of a T-type Ca2+ current and blocked by strong pH buffering with HEPES or TABS. Increasing vesicular pH with internal methylamine in hair cells also abolished the transient block. High concentrations of intracellular Ca2+ buffer (10 mm BAPTA) greatly reduced exocytosis and abolished the transient block of the Ca2+ current. We estimate that this transient block is due to the rapid multivesicular release of ∼600–1300 H+ ions per synaptic ribbon. Finally, during a train of depolarizing pulses, paired pulse plasticity was significantly changed by using 40 mm HEPES in addition to bicarbonate buffer. We propose that this transient block of Ca2+ current leads to more efficient exocytosis per Ca2+ ion influx and it may contribute to spike adaptation at the auditory nerve. PMID:25429130

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Chest Drain Fall-Out Rate According to Suturing Practices: A Retrospective Direct Comparison.

PubMed

Asciak, Rachelle; Addala, Dinesh; Karimjee, Juzer; Rana, Maaz Suhail; Tsikrika, Stamatoula; Hassan, Maged Fayed; Mercer, Rachel Mary; Hallifax, Robert John; Wrightson, John Matthew; Psallidas, Ioannis; Benamore, Rachel; Rahman, Najib Mahboob

2018-06-14

Chest drains often become displaced and require replacement, adding unnecessary risks to patients. Simple measures such as suturing of the drain may reduce fall-out rates; however, there is no direct data to demonstrate this and no standardized recommended practice that is evidence based. The study aimed to analyze the rate of chest drain fall out according to suturing practice. Retrospective analysis of all chest drain insertions (radiology and pleural teams) in 2015-2016. Details of chest drain fall out were collected from patient electronic records. Drain "fall out" was pre-hoc defined as the drain tip becoming dislodged outside the pleural cavity unintentionally before a clinical decision was taken to remove the drain. A total of 369 chest drains were inserted: sutured (n = 106, 28.7%; 44 male [41.5%], median age 74 [interquartile range (IQR) 21] years), and unsutured (n = 263, 71.3%; 139 male [52.9%], median age 68 [IQR 21] years). Of the sutured drains, 7 (6.6%) fell out after a mean of 3.3 days (SD 2.6) compared to 39 (14.8%; p = 0.04) unsutured drains falling out after a mean of 2.7 days (SD 2.0; p = 0.8). Within the limits of this retrospective analysis, these results -suggest that suturing of drains is associated with lower fall-out rates. © 2018 S. Karger AG, Basel.

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

NASA Astrophysics Data System (ADS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-08-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

NASA Technical Reports Server (NTRS)

Buchner, Stephen; McMorrow, Dale; Roche, Nicholas; Dusseau, Laurent; Pease, Ron L.

2008-01-01

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

Suction on chest drains following lung resection: evidence and practice are not aligned.

PubMed

Lang, Peter; Manickavasagar, Menaka; Burdett, Clare; Treasure, Tom; Fiorentino, Francesca

2016-02-01

A best evidence topic in Interactive CardioVascular and Thoracic Surgery (2006) looked at application of suction to chest drains following pulmonary lobectomy. After screening 391 papers, the authors analysed six studies (five randomized controlled trials [RCTs]) and found no evidence in favour of postoperative suction in terms of air leak duration, time to chest drain removal or length of stay. Indeed, suction was found to be detrimental in four studies. We sought to determine whether clinical practice is consistent with published evidence by surveying thoracic units nationally and performing a meta-analysis of current best evidence. We systematically searched MEDLINE, EMBASE and CENTRAL for RCTs, comparing outcomes with and without application of suction to chest drains after lung surgery. A meta-analysis was performed using RevMan(©) software. A questionnaire concerning chest drain management and suction use was emailed to a clinical representative in every thoracic unit. Eight RCTs, published 2001-13, with 31-500 participants, were suitable for meta-analysis. Suction prolonged length of stay (weighted mean difference [WMD] 1.74 days; 95% confidence interval [CI] 1.17-2.30), chest tube duration (WMD 1.77 days; 95% CI 1.47-2.07) and air leak duration (WMD 1.47 days; 95% CI 1.45-2.03). There was no difference in occurrence of prolonged air leak. Suction was associated with fewer instances of postoperative pneumothorax. Twenty-five of 39 thoracic units responded to the national survey. Suction is routinely used by all surgeons in 11 units, not by any surgeon in 5 and by some surgeons in 9. Of the 91 surgeons represented, 62 (68%) routinely used suction. Electronic drains are used in 15 units, 10 of which use them routinely. Application of suction to chest drains following non-pneumonectomy lung resection is common practice. Suction has an effect in hastening the removal of air and fluid in clinical experience but a policy of suction after lung resection has not been shown to offer improved clinical outcomes. Clinical practice is not aligned with Level 1a evidence. © The Author 2015. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

Might digital drains speed up the time to thoracic drain removal?

PubMed

Afoke, Jonathan; Tan, Carol; Hunt, Ian; Zakkar, Mustafa

2014-07-01

A best evidence topic in thoracic surgery was written according to a structured protocol. The question addressed was: might digital drains speed up the time to thoracic drain removal in terms of time till chest drain removal, hospital stay and overall cost? A total of 296 papers were identified as a result of the search as described below. Of these, five papers provided the best evidence to answer the clinical question. The author, date and country of publication, patient group studied, study type, relevant outcomes, results and study weaknesses of the papers are tabulated. A literature search revealed that several single-centre prospective randomized studies have shown significantly earlier removal of chest drains with digital drains ranging between 0.8 and 2.1 days sooner. However, there was heterogeneity in studies in the management protocol of chest drains in terms of the use of suction, number of drains and assessment for drain removal. Some protocols such as routinely keeping drains irrespective of the presence of air leak or drain output may have skewed results. Differences in exclusion criteria and protocols for discharging home with portable devices may have biased results. Due to heterogeneity in the management protocol of chest drains, there is conflicting evidence regarding hospital stay. The limited data on cost suggest that there may be significantly lower postoperative costs in the digital drain group. All the studies were single-centre series generally including patients with good preoperative lung function tests. Further larger studies with more robust chest drain management protocols are required especially to assess length of hospital stay, cost and whether the results are applicable to a larger patient population. © The Author 2014. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

Profound regulation of Na/K pump activity by transient elevations of cytoplasmic calcium in murine cardiac myocytes

PubMed Central

Lu, Fang-Min; Deisl, Christine; Hilgemann, Donald W

2016-01-01

Small changes of Na/K pump activity regulate internal Ca release in cardiac myocytes via Na/Ca exchange. We now show conversely that transient elevations of cytoplasmic Ca strongly regulate cardiac Na/K pumps. When cytoplasmic Na is submaximal, Na/K pump currents decay rapidly during extracellular K application and multiple results suggest that an inactivation mechanism is involved. Brief activation of Ca influx by reverse Na/Ca exchange enhances pump currents and attenuates current decay, while repeated Ca elevations suppress pump currents. Pump current enhancement reverses over 3 min, and results are similar in myocytes lacking the regulatory protein, phospholemman. Classical signaling mechanisms, including Ca-activated protein kinases and reactive oxygen, are evidently not involved. Electrogenic signals mediated by intramembrane movement of hydrophobic ions, such as hexyltriphenylphosphonium (C6TPP), increase and decrease in parallel with pump currents. Thus, transient Ca elevation and Na/K pump inactivation cause opposing sarcolemma changes that may affect diverse membrane processes. DOI: http://dx.doi.org/10.7554/eLife.19267.001 PMID:27627745

Emerging technologies to remove nonpoint phosphorus sources from surface water and groundwater

USDA-ARS?s Scientific Manuscript database

New innovative remediation practices are currently being developed that address phosphorus transfers from soils and applied sources to surface and ground waters. These practices include reactive barriers placed along field ditches and drainage ways, retention filters at the end of tile drains, mater...

Analyzing Single-Event Gate Ruptures In Power MOSFET's

NASA Technical Reports Server (NTRS)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Simulation Model of A Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry W. (Technical Monitor)

2002-01-01

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D.

2007-11-01

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA/mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3-5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ˜3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2/Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge's constant measured by low frequency noise spectral density characterization is 3.7×10-5 for the same device.

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Tanaka, Hiroyuki; Umeyama, Norio; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2018-06-01

P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the 〈110〉 or 〈100〉 channel direction have been successfully fabricated on circular silicon-on-insulator (SOI) diaphragms using a cost-effective minimal-fab process, and their electrical characteristics have been systematically investigated before and after the SOI diaphragm formation. It was found that almost the same subthreshold slope (S-slope) and threshold voltage (V t) are observed in the fabricated PMOSFETs before and after the SOI diaphragm formation, and they are independent of the channel direction. On the other hand, significant variations in drain current were observed in the fabricated PMOSFETs with the 〈110〉 channel direction after the SOI diaphragm formation owing to the residual mechanical stress-induced piezoresistive effect. It was also confirmed that electrical characteristics of the fabricated PMOSFETs with the 〈100〉 channel direction are almost the same before and after the SOI diaphragm formation, i.e., not sensitive to the mechanical stress. Moreover, the drain current variations at different directions of mechanical stress and current flow were systematically investigated and discussed.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

PubMed

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PubMed Central

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

A New Comprehensive Lightning Instrumentation System for Pad 39B at the Kennedy Space Center, Florida

NASA Technical Reports Server (NTRS)

Mata, Carlos T.; Rakov, Vladimir A.; Mata, Angel G.; Bonilla Tatiana; Navedo, Emmanuel; Snyder, Gary P.

2010-01-01

A new comprehensive lightning instrumentation system has been designed for Launch Complex 39B at the Kennedy Space Center, Florida. This new instrumentation system includes the synchronized recording of six high-speed video cameras, currents through the nine downconductors of the new lightning protection system, four B-dot, 3-axis measurement stations, and five D-dot stations composed of two antennas each. The instrumentation system is composed of centralized transient recorders and digitizers that located close to the sensors in the field. The sensors and transient recorders communicate via optical fiber. The transient recorders are triggered by the B-dot sensors, the E-dot sensors, or the current through the downlead conductors. The high-speed cameras are triggered by the transient recorders when the latter perceives a qualified trigger.

Capabilities Development for Transient Testing of Advanced Nuclear Fuels at TREAT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woolstenhulme, N. E.; Baker, C. C.; Bess, J. D.

2016-09-01

The TREAT facility is a unique capability at the Idaho National Laboratory currently being prepared for resumption of nuclear transient testing. Accordingly, designs for several transient irradiation tests are being pursued to enable development of advanced nuclear fuels and materials. In addition to the reactor itself, the foundation for TREAT’s capabilities also include a suite of irradiation vehicles and supporting infrastructure to provide the desired specimen boundary conditions while supporting a variety of instrumentation needs. The challenge of creating these vehicles, especially since many of the modern data needs were not historically addressed in TREAT experiment vehicles, has necessitated amore » sizeable engineering effort. This effort is currently underway and maturing rapidly. This paper summarizes the status, future plans, and rationale for TREAT experiment vehicle capabilities. Much of the current progress is focused around understanding and demonstrating the behavior of fuel design with enhanced accident tolerance in water-cooled reactors. Additionally, several related efforts are underway to facilitate transient testing in liquid sodium, inert gas, and steam environments. This paper discusses why such a variety of capabilities are needed, outlines plans to accomplish them, and describes the relationship between transient data needs and the irradiation hardware that will support the gathering of this information.« less

Drain Insertion in Chronic Subdural Hematoma: An International Survey of Practice.

PubMed

Soleman, Jehuda; Kamenova, Maria; Lutz, Katharina; Guzman, Raphael; Fandino, Javier; Mariani, Luigi

2017-08-01

To investigate whether, after the publication of grade I evidence that it reduces recurrence rates, the practice of drain insertion after burr-hole drainage of chronic subdural hematoma has changed. Further, we aimed to document various practice modalities concerning the insertion of a drain adopted by neurosurgeons internationally. We administered a survey to neurosurgeons worldwide with questions relating to the surgical treatment of chronic subdural hematoma, with an emphasis on their practices concerning the use of a drain. The preferred surgical technique was burr-hole drainage (89%). Most surgeons prefer to place a drain (80%), whereas in 56% of the cases the reason for not placing a drain was brain expansion after evacuation. Subdural drains are placed by 50% and subperiosteal drains by 27% of the responders, whereas 23% place primarily a subdural drain if possible and otherwise a subperiosteal drain. Three quarters of the responders leave the drain for 48 hours and give prophylactic antibiotic treatment, mostly a single-shot dose intraoperatively (70%). Routine postoperative computed tomography is done by 59% mostly within 24-48 hours after surgery (94%). Adjunct treatment to surgery rarely is used (4%). The publication of grade I evidence in favor of drain use influenced positively this practice worldwide. Some surgeons are still reluctant to insert a drain, especially when the subdural space is narrow after drainage of the hematoma. The insertion of a subperiosteal drain could be a good alternative solution. However, its outcome and efficacy must be evaluated in larger studies. Copyright © 2017 Elsevier Inc. All rights reserved.

Novel Split Chest Tube Improves Post-Surgical Thoracic Drainage

PubMed Central

Olivencia-Yurvati, Albert H; Cherry, Brandon H; Gurji, Hunaid A; White, Daniel W; Newton, J Tyler; Scott, Gary F; Hoxha, Besim; Gourlay, Terence; Mallet, Robert T

2014-01-01

Objective Conventional, separate mediastinal and pleural tubes are often inefficient at draining thoracic effusions. Description We developed a Y-shaped chest tube with split ends that divide within the thoracic cavity, permitting separate intrathoracic placement and requiring a single exit port. In this study, thoracic drainage by the split drain vs. that of separate drains was tested. Methods After sternotomy, pericardiotomy, and left pleurotomy, pigs were fitted with separate chest drains (n=10) or a split tube prototype (n=9) with internal openings positioned in the mediastinum and in the costo-diaphragmatic recess. Separate series of experiments were conducted to test drainage of D5W or 0.58 M sucrose, an aqueous solution with viscosity approximating that of plasma. One litre of fluid was infused into the thorax, and suction was applied at −20 cm H2O for 30 min. Results When D5W was infused, the split drain left a residual volume of 53 ± 99 ml (mean value ± SD) vs. 148 ± 120 for the separate drain (P=0.007), representing a drainage efficiency (i.e. drained vol/[drained + residual vol]) of 95 ± 10% vs. 86 ± 12% for the separate drains (P = 0.011). In the second series, the split drain evacuated more 0.58 M sucrose in the first minute (967 ± 129 ml) than the separate drains (680 ± 192 ml, P<0.001). By 30 min, the split drain evacuated a similar volume of sucrose vs. the conventional drain (1089 ± 72 vs. 1056 ± 78 ml; P = 0.5). Residual volume tended to be lower (25 ± 10 vs. 62 ± 72 ml; P = 0.128) and drainage efficiency tended to be higher (98 ± 1 vs. 95 ± 6%; P = 0.111) with the split drain vs. conventional separate drains. Conclusion The split chest tube drained the thoracic cavity at least as effectively as conventional separate tubes. This new device could potentially alleviate postoperative complications. PMID:25478289

Novel Split Chest Tube Improves Post-Surgical Thoracic Drainage.

PubMed

Olivencia-Yurvati, Albert H; Cherry, Brandon H; Gurji, Hunaid A; White, Daniel W; Newton, J Tyler; Scott, Gary F; Hoxha, Besim; Gourlay, Terence; Mallet, Robert T

2014-01-01

Conventional, separate mediastinal and pleural tubes are often inefficient at draining thoracic effusions. We developed a Y-shaped chest tube with split ends that divide within the thoracic cavity, permitting separate intrathoracic placement and requiring a single exit port. In this study, thoracic drainage by the split drain vs. that of separate drains was tested. After sternotomy, pericardiotomy, and left pleurotomy, pigs were fitted with separate chest drains (n=10) or a split tube prototype (n=9) with internal openings positioned in the mediastinum and in the costo-diaphragmatic recess. Separate series of experiments were conducted to test drainage of D5W or 0.58 M sucrose, an aqueous solution with viscosity approximating that of plasma. One litre of fluid was infused into the thorax, and suction was applied at -20 cm H2O for 30 min. When D5W was infused, the split drain left a residual volume of 53 ± 99 ml (mean value ± SD) vs. 148 ± 120 for the separate drain (P=0.007), representing a drainage efficiency (i.e. drained vol/[drained + residual vol]) of 95 ± 10% vs. 86 ± 12% for the separate drains (P = 0.011). In the second series, the split drain evacuated more 0.58 M sucrose in the first minute (967 ± 129 ml) than the separate drains (680 ± 192 ml, P<0.001). By 30 min, the split drain evacuated a similar volume of sucrose vs. the conventional drain (1089 ± 72 vs. 1056 ± 78 ml; P = 0.5). Residual volume tended to be lower (25 ± 10 vs. 62 ± 72 ml; P = 0.128) and drainage efficiency tended to be higher (98 ± 1 vs. 95 ± 6%; P = 0.111) with the split drain vs. conventional separate drains. The split chest tube drained the thoracic cavity at least as effectively as conventional separate tubes. This new device could potentially alleviate postoperative complications.

Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

NASA Astrophysics Data System (ADS)

Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

2018-03-01

The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

Four-gate transistor analog multiplier circuit

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

2011-01-01

A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

NASA Astrophysics Data System (ADS)

Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

3. DRAINING & DRYING BUILDING, REINFORCED CONCRETE MUSHROOM COLUMNS WITH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. DRAINING & DRYING BUILDING, REINFORCED CONCRETE MUSHROOM COLUMNS WITH DROP PANELS SUPPORTING DRAINING BINS (IRON VALVES OF DRAINING BINS ARE EMBEDDED IN THE CEILING), VIEW LOOKING WEST - Mill "C" Complex, Sand Draining & Drying Building, South of Dee Bennet Road, near Illinois River, Ottawa, La Salle County, IL

Evisceration of Appendix through the Drain Site: A Rare Case Report.

PubMed

Ravishankaran, Praveen; Rajamani, A

2013-06-01

Placing a drain after surgery is a usual procedure in any emergency abdominal operation. The drain is removed as soon as its purpose of draining the intraabdominal collection in served. Evisceration of intraabdominal organs through the drain site is a rare occurance. This case report is about an 12 year old girl who was admitted with blunt trauma abdomen. After completion of emergency laparotomy a drain was placed in the right lower quadrant. When the drain was removed on the 6th post operative day, the appendix eviscerated out of the drain site. The wound was extended a little and an appendectomy was done. This case is presented for its rarity as only two similar instances have been reported in literature so far.

A forgotten retained drain inside a knee for 10 years: A case report.

PubMed

Koaban, Saeed; Alatassi, Raheef; Alogayyel, Nawaf

2018-05-29

Surgical drains are inserted into the wound after an arthroscopic knee procedure mainly to decrease fluid collection after the operation. The use of postoperative surgical drains remains controversial. This report presents a rare case of a forgotten retained drain that was accidentally found inside a knee 10 years after an arthroscopic procedure. The drain was removed without any complications. A retained and broken drain during removal is a very rare and preventable complication that can be stressful for both the patient and surgeon. Most of the literature supports that retained drains in the soft tissues do not affect long-term outcomes, but if the drain fragment is in the intra-articular area, it might cause complications. Furthermore, there are several preventive measures to avoid retained surgical drains. By reporting this case of a forgotten drain retained inside a knee for approximately 10 years, we aim to illustrate the potential risk of leaving a drain inside the joint following an arthroscopic procedure. Furthermore, we advise that surgeons maintain a high index of suspicion for iatrogenic complications when a patient continues to complain about unexplained pain at the surgical site. Copyright © 2018 The Authors. Published by Elsevier Ltd.. All rights reserved.

Three-dimensional numerical model of ground-water flow in northern Utah Valley, Utah County, Utah

USGS Publications Warehouse

Gardner, Philip M.

2009-01-01

A three-dimensional, finite-difference, numerical model was developed to simulate ground-water flow in northern Utah Valley, Utah. The model includes expanded areal boundaries as compared to a previous ground-water flow model of the valley and incorporates more than 20 years of additional hydrologic data. The model boundary was generally expanded to include the bedrock in the surrounding mountain block as far as the surface-water divide. New wells have been drilled in basin-fill deposits near the consolidated-rock boundary. Simulating the hydrologic conditions within the bedrock allows for improved simulation of the effect of withdrawal from these wells. The inclusion of bedrock also allowed for the use of a recharge model that provided an alternative method for spatially distributing areal recharge over the mountains.The model was calibrated to steady- and transient-state conditions. The steady-state simulation was developed and calibrated by using hydrologic data that represented average conditions for 1947. The transient-state simulation was developed and calibrated by using hydrologic data collected from 1947 to 2004. Areally, the model grid is 79 rows by 70 columns, with variable cell size. Cells throughout most of the model domain represent 0.3 mile on each side. The largest cells are rectangular with dimensions of about 0.3 by 0.6 mile. The largest cells represent the mountain block on the eastern edge of the model domain where the least hydrologic data are available. Vertically, the aquifer system is divided into 4 layers which incorporate 11 hydrogeologic units. The model simulates recharge to the ground-water flow system as (1) infiltration of precipitation over the mountain block, (2) infiltration of precipitation over the valley floor, (3) infiltration of unconsumed irrigation water from fields, lawns, and gardens, (4) seepage from streams and canals, and (5) subsurface inflow from Cedar Valley. Discharge of ground water is simulated by the model to (1) flowing and pumping wells, (2) drains and springs, (3) evapotranspiration, (4) Utah Lake, (5) the Jordan River and mountain streams, and (6) Salt Lake Valley by subsurface outflow through the Jordan Narrows.During steady-state calibration, variables were adjusted within probable ranges to minimize differences between model-computed and measured water levels as well as between model-computed and independently estimated flows that include: recharge by seepage from individual streams and canals, discharge by seepage to individual streams and the Jordan River, discharge to Utah Lake, discharge to drains and springs, discharge by evapotranspiration, and subsurface flows into and out of northern Utah Valley from Cedar Valley and to Salt Lake Valley, respectively. The transient-state simulation was calibrated to measured water levels and water-level changes with consideration given to annual changes in the flows listed above.

Actions of bis(7)-tacrine and tacrine on transient potassium current in rat DRG neurons and potassium current mediated by K(V)4.2 expressed in Xenopus oocyte.

PubMed

Li, Xiang-Yuan; Zhang, Jian; Dai, Jia-Pei; Liu, Xiang-Ming; Li, Zhi-Wang

2010-03-08

Bis(7)-tacrine [bis(7)-tetrahydroaminacrine] is a dimeric AChE inhibitor derived from tacrine with a potential to treat Alzheimer's disease. Actions of bis(7)-tacrine on ligand-gated ion channels and voltage-gated cation channels have been identified on neurons of both central and peripheral nervous systems. In the present study, the effect of bis(7)-tacrine was investigated on the K(V)4.2 encoded potassium currents expressed in Xenopus oocytes and the transient A-type potassium current (I(K(A))) on rat DRG neurons. Bis(7)-tacrine suppressed recombinant Kv4.2 potassium channels in a concentration-dependent manner, with IC(50) value of 0.53+/-0.13 muM. Tacrine also inhibited Kv4.2 channels, but with a much lower potency (IC(50) 74+/-15 muM).The possible mechanisms underlying the inhibition on potassium currents by bis(7)-tacrine/tacrine could be that inactivation of the transient potassium currents was accelerated and recovery of the native or Kv4.2 expressed potassium currents was suppressed by bis(7)-tacrine/tacrine. Copyright 2010 Elsevier B.V. All rights reserved.

Estimating drain flow from measured water table depth in layered soils under free and controlled drainage

NASA Astrophysics Data System (ADS)

Saadat, Samaneh; Bowling, Laura; Frankenberger, Jane; Kladivko, Eileen

2018-01-01

Long records of continuous drain flow are important for quantifying annual and seasonal changes in the subsurface drainage flow from drained agricultural land. Missing data due to equipment malfunction and other challenges have limited conclusions that can be made about annual flow and thus nutrient loads from field studies, including assessments of the effect of controlled drainage. Water table depth data may be available during gaps in flow data, providing a basis for filling missing drain flow data; therefore, the overall goal of this study was to examine the potential to estimate drain flow using water table observations. The objectives were to evaluate how the shape of the relationship between drain flow and water table height above drain varies depending on the soil hydraulic conductivity profile, to quantify how well the Hooghoudt equation represented the water table-drain flow relationship in five years of measured data at the Davis Purdue Agricultural Center (DPAC), and to determine the impact of controlled drainage on drain flow using the filled dataset. The shape of the drain flow-water table height relationship was found to depend on the selected hydraulic conductivity profile. Estimated drain flow using the Hooghoudt equation with measured water table height for both free draining and controlled periods compared well to observed flow with Nash-Sutcliffe Efficiency values above 0.7 and 0.8 for calibration and validation periods, respectively. Using this method, together with linear regression for the remaining gaps, a long-term drain flow record for a controlled drainage experiment at the DPAC was used to evaluate the impacts of controlled drainage on drain flow. In the controlled drainage sites, annual flow was 14-49% lower than free drainage.

Transient fault behavior in a microprocessor: A case study

NASA Technical Reports Server (NTRS)

Duba, Patrick

1989-01-01

An experimental analysis is described which studies the susceptibility of a microprocessor based jet engine controller to upsets caused by current and voltage transients. A design automation environment which allows the run time injection of transients and the tracing from their impact device to the pin level is described. The resulting error data are categorized by the charge levels of the injected transients by location and by their potential to cause logic upsets, latched errors, and pin errors. The results show a 3 picoCouloumb threshold, below which the transients have little impact. An Arithmetic and Logic Unit transient is most likely to result in logic upsets and pin errors (i.e., impact the external environment). The transients in the countdown unit are potentially serious since they can result in latched errors, thus causing latent faults. Suggestions to protect the processor against these errors, by incorporating internal error detection and transient suppression techniques, are also made.

14 CFR 27.999 - Fuel system drains.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Fuel system drains. 27.999 Section 27.999... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Fuel System Components § 27.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 27.999 - Fuel system drains.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Fuel system drains. 27.999 Section 27.999... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Fuel System Components § 27.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 27.999 - Fuel system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Fuel system drains. 27.999 Section 27.999... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Fuel System Components § 27.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 29.999 - Fuel system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Fuel system drains. 29.999 Section 29.999... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System Components § 29.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 27.999 - Fuel system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Fuel system drains. 27.999 Section 27.999... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Fuel System Components § 27.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 29.999 - Fuel system drains.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Fuel system drains. 29.999 Section 29.999... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System Components § 29.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 29.999 - Fuel system drains.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Fuel system drains. 29.999 Section 29.999... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System Components § 29.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 29.999 - Fuel system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Fuel system drains. 29.999 Section 29.999... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System Components § 29.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 29.999 - Fuel system drains.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Fuel system drains. 29.999 Section 29.999... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System Components § 29.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

14 CFR 27.999 - Fuel system drains.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Fuel system drains. 27.999 Section 27.999... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Fuel System Components § 27.999 Fuel system drains. (a) There must be at least one accessible drain at the lowest point in each fuel system to completely drain...

21 CFR 868.5995 - Tee drain (water trap).

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Tee drain (water trap). 868.5995 Section 868.5995...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5995 Tee drain (water trap). (a) Identification. A tee drain (water trap) is a device intended to trap and drain water that collects in ventilator...

21 CFR 868.5995 - Tee drain (water trap).

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Tee drain (water trap). 868.5995 Section 868.5995...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5995 Tee drain (water trap). (a) Identification. A tee drain (water trap) is a device intended to trap and drain water that collects in ventilator...

21 CFR 868.5995 - Tee drain (water trap).

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Tee drain (water trap). 868.5995 Section 868.5995...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5995 Tee drain (water trap). (a) Identification. A tee drain (water trap) is a device intended to trap and drain water that collects in ventilator...

21 CFR 868.5995 - Tee drain (water trap).

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Tee drain (water trap). 868.5995 Section 868.5995...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5995 Tee drain (water trap). (a) Identification. A tee drain (water trap) is a device intended to trap and drain water that collects in ventilator...

A mathematical model to optimize the drain phase in gravity-based peritoneal dialysis systems.

PubMed

Akonur, Alp; Lo, Ying-Cheng; Cizman, Borut

2010-01-01

Use of patient-specific drain-phase parameters has previously been suggested to improve peritoneal dialysis (PD) adequacy. Improving management of the drain period may also help to minimize intraperitoneal volume (IPV). A typical gravity-based drain profile consists of a relatively constant initial fast-flow period, followed by a transition period and a decaying slow-flow period. That profile was modeled using the equation VD(t) = (V(D0) - Q(MAX) x t) xphi + (V(D0) x e(-alphat)) x (1 - phi), where V(D)(t) is the time-dependent dialysate volume; V(D0), the dialysate volume at the start of the drain; Q(MAX), the maximum drain flow rate; alpha, the exponential drain constant; and phi, the unit step function with respect to the flow transition. We simulated the effects of the assumed patient-specific maximum drain flow (Q(MAX)) and transition volume (psi), and the peritoneal volume percentage when transition occurs,for fixed device-specific drain parameters. Average patient transport parameters were assumed during 5-exchange therapy with 10 L of PD solution. Changes in therapy performance strongly depended on the drain parameters. Comparing 400 mL/85% with 200 mL/65% (Q(MAX/psi), drain time (7.5 min vs. 13.5 min) and IPV (2769 mL vs. 2355 mL) increased when the initial drain flow was low and the transition quick. Ultrafiltration and solute clearances remained relatively similar. Such differences were augmented up to a drain time of 22 minutes and an IPV of more than 3 L when Q(MAX) was 100 mL/min. The ability to model individual drain conditions together with water and solute transport may help to prevent patient discomfort with gravity-based PD. However, it is essential to note that practical difficulties such as displaced catheters and obstructed flow paths cause variability in drain characteristics even for the same patient, limiting the clinical applicability of this model.

Bacterial diversity of floor drain biofilms and drain waters in a Listeria monocytogenes contaminated food processing environment.

PubMed

Dzieciol, Monika; Schornsteiner, Elisa; Muhterem-Uyar, Meryem; Stessl, Beatrix; Wagner, Martin; Schmitz-Esser, Stephan

2016-04-16

Sanitation protocols are applied on a daily basis in food processing facilities to prevent the risk of cross-contamination with spoilage organisms. Floor drain water serves along with product-associated samples (slicer dust, brine or cheese smear) as an important hygiene indicator in monitoring Listeria monocytogenes in food processing facilities. Microbial communities of floor drains are representative for each processing area and are influenced to a large degree by food residues, liquid effluents and washing water. The microbial communities of drain water are steadily changing, whereas drain biofilms provide more stable niches. Bacterial communities of four floor drains were characterized using 16S rRNA gene pyrosequencing to better understand the composition and exchange of drain water and drain biofilm communities. Furthermore, the L. monocytogenes contamination status of each floor drain was determined by applying cultivation-independent real-time PCR quantification and cultivation-dependent detection according to ISO11290-1. Pyrosequencing of 16S rRNA genes of drain water and drain biofilm bacterial communities yielded 50,611 reads, which were clustered into 641 operational taxonomic units (OTUs), affiliated to 16 phyla dominated by Proteobacteria, Firmicutes and Bacteroidetes. The most abundant OTUs represented either product- (Lactococcus lactis) or fermentation- and food spoilage-associated phylotypes (Pseudomonas mucidolens, Pseudomonas fragi, Leuconostoc citreum, and Acetobacter tropicalis). The microbial communities in DW and DB samples were distinct in each sample type and throughout the whole processing plant, indicating the presence of indigenous specific microbial communities in each processing compartment. The microbiota of drain biofilms was largely different from the microbiota of the drain water. A sampling approach based on drain water alone may thus only provide reliable information on planktonic bacterial cells but might not allow conclusions on the bacterial composition of the microbiota in biofilms. Copyright © 2016. Published by Elsevier B.V.

Definition and classification of chyle leak after pancreatic operation: A consensus statement by the International Study Group on Pancreatic Surgery.

PubMed

Besselink, Marc G; van Rijssen, L Bengt; Bassi, Claudio; Dervenis, Christos; Montorsi, Marco; Adham, Mustapha; Asbun, Horacio J; Bockhorn, Maximillian; Strobel, Oliver; Büchler, Markus W; Busch, Olivier R; Charnley, Richard M; Conlon, Kevin C; Fernández-Cruz, Laureano; Fingerhut, Abe; Friess, Helmut; Izbicki, Jakob R; Lillemoe, Keith D; Neoptolemos, John P; Sarr, Michael G; Shrikhande, Shailesh V; Sitarz, Robert; Vollmer, Charles M; Yeo, Charles J; Hartwig, Werner; Wolfgang, Christopher L; Gouma, Dirk J

2017-02-01

Recent literature suggests that chyle leak may complicate up to 10% of pancreatic resections. Treatment depends on its severity, which may include chylous ascites. No international consensus definition or grading system of chyle leak currently is available. The International Study Group on Pancreatic Surgery, an international panel of pancreatic surgeons working in well-known, high-volume centers, reviewed the literature and worked together to establish a consensus on the definition and classification of chyle leak after pancreatic operation. Chyle leak was defined as output of milky-colored fluid from a drain, drain site, or wound on or after postoperative day 3, with a triglyceride content ≥110 mg/dL (≥1.2 mmol/L). Three different grades of severity were defined according to the management needed: grade A, no specific intervention other than oral dietary restrictions; grade B, prolongation of hospital stay, nasoenteral nutrition with dietary restriction, total parenteral nutrition, octreotide, maintenance of surgical drains, or placement of new percutaneous drains; and grade C, need for other more invasive in-hospital treatment, intensive care unit admission, or mortality. This classification and grading system for chyle leak after pancreatic resection allows for comparison of outcomes between series. As with the other the International Study Group on Pancreatic Surgery consensus statements, this classification should facilitate communication and evaluation of different approaches to the prevention and treatment of this complication. Copyright © 2016 Elsevier Inc. All rights reserved.

Partially to fully saturated flow through smooth, clean, open fractures: qualitative experimental studies

NASA Astrophysics Data System (ADS)

Jones, Brendon R.; Brouwers, Luke B.; Dippenaar, Matthys A.

2018-05-01

Fractures are both rough and irregular but can be expressed by a simple model concept of two smooth parallel plates and the associated cubic law governing discharge through saturated fractures. However, in natural conditions and in the intermediate vadose zone, these assumptions are likely violated. This paper presents a qualitative experimental study investigating the cubic law under variable saturation in initially dry free-draining discrete fractures. The study comprised flow visualisation experiments conducted on transparent replicas of smooth parallel plates with inlet conditions of constant pressure and differing flow rates over both vertical and horizontal inclination. Flow conditions were altered to investigate the influence of intermittent and continuous influx scenarios. Findings from this research proved, for instance, that saturated laminar flow is not likely achieved, especially in nonhorizontal fractures. In vertical fractures, preferential flow occupies the minority of cross-sectional area despite the water supply. Movement of water through the fractured vadose zone therefore becomes a matter of the continuity principle, whereby water should theoretically be transported downward at significantly higher flow rates given the very low degree of water saturation. Current techniques that aim to quantify discrete fracture flow, notably at partial saturation, are questionable. Inspired by the results of this study, it is therefore hypothetically improbable to achieve saturation in vertical fractures under free-draining wetting conditions. It does become possible under extremely excessive water inflows or when not free-draining; however, the converse is not true, as a wet vertical fracture can be drained.

Amylase in drain fluid for the diagnosis of pancreatic leak in post-pancreatic resection.

PubMed

Davidson, Tsetsegdemberel Bat-Ulzii; Yaghoobi, Mohammad; Davidson, Brian R; Gurusamy, Kurinchi Selvan

2017-04-07

The treatment of people with clinically significant postoperative pancreatic leaks is different from those without clinically significant pancreatic leaks. It is important to know the diagnostic accuracy of drain fluid amylase as a triage test for the detection of clinically significant pancreatic leaks, so that an informed decision can be made as to whether the patient with a suspected pancreatic leak needs further investigations and treatment. There is currently no systematic review of the diagnostic test accuracy of drain fluid amylase for the diagnosis of clinically relevant pancreatic leak. To determine the diagnostic accuracy of amylase in drain fluid at 48 hours or more for the diagnosis of pancreatic leak in people who had undergone pancreatic resection. We searched MEDLINE, Embase, the Science Citation Index Expanded, and the National Institute for Health Research Health Technology Assessment (NIHR HTA) websites up to 20 February 2017. We searched the references of the included studies to identify additional studies. We did not restrict studies based on language or publication status, or whether data were collected prospectively or retrospectively. We also performed a 'related search' and 'citing reference' search in MEDLINE and Embase. We included all studies that evaluated the diagnostic test accuracy of amylase in the drain fluid at 48 hours or more for the diagnosis of pancreatic leak in people who had undergone pancreatic resection excluding total pancreatectomy. We planned to exclude case-control studies because these studies are prone to bias, but did not find any. At least two authors independently searched and screened the references produced by the search to identify relevant studies. Two review authors independently extracted data from the included studies. The included studies reported drain fluid amylase on different postoperative days and measured at different cut-off levels, so it was not possible to perform a meta-analysis using the bivariate model as planned. We have reported the sensitivity, specificity, post-test probability of a positive and negative drain fluid amylase along with 95% confidence interval (CI) on each of the different postoperative days and measured at different cut-off levels. A total of five studies including 868 participants met the inclusion criteria for this review. The five studies included in this review reported the value of drain fluid amylase at different thresholds and different postoperative days. The sensitivities and specificities were variable; the sensitivities ranged between 0.72 and 1.00 while the specificities ranged between 0.73 and 0.99 for different thresholds on different postoperative days. At the median prevalence (pre-test probability) of 15.9%, the post-test probabilities for pancreatic leak ranged between 35.9% and 95.4% for a positive drain fluid amylase test and ranged between 0% and 5.5% for a negative drain fluid amylase test.None of the studies used the reference standard of confirmation by surgery or by a combination of surgery and clinical follow-up, but used the International Study Group on Pancreatic Fistula (ISGPF) grade B and C as the reference standard. The overall methodological quality was unclear or high in all the studies. Because of the paucity of data and methodological deficiencies in the studies, we are uncertain whether drain fluid amylase should be used as a method for testing for pancreatic leak in an unselected population after pancreatic resection; and we judge that the optimal cut-off of drain fluid amylase for making the diagnosis of pancreatic leak is also not clear. Further well-designed diagnostic test accuracy studies with pre-specified index test threshold of drain fluid amylase (at three times more on postoperative day 5 or another suitable pre-specified threshold), appropriate follow-up (for at least six to eight weeks to ensure that there are no pancreatic leaks), and clearly defined reference standards (of surgical, clinical, and radiological confirmation of pancreatic leak) are important to reliably determine the diagnostic accuracy of drain fluid amylase in the diagnosis of pancreatic leak.

Drivers of variability in tree transpiration in a Boreal Black Spruce Forest Chronosequence

NASA Astrophysics Data System (ADS)

Angstmann, J. L.; Ewers, B. E.; Kwon, H.

2009-12-01

Boreal forests are of particular interest in climate change studies because of their large land area and ability to sequester and store carbon, which is controlled by water availability. Heterogeneity of these forests is predicted to increase with climate change through the impact of more frequent wildfires, warmer, longer growing seasons, and potential drainage of forested wetlands. This study aims to quantify the influence of stand age, drainage condition, and species on tree transpiration and its drivers in a central Canadian black spruce boreal forest. Heat dissipation sensors were installed in 113 trees (69 Picea mariana (black spruce), 25 Populus tremuloides (trembling aspen), and 19 Pinus banksiana (jack pine) at four stand ages, each containing a well- and poorly-drained site over three growing seasons (2006-2008). Sap flux per unit xylem area, JS, was expressed as transpiration per unit ground area, EC, and transpiration per unit leaf area, EL, using site- and species-specific allometry to obtain sapwood area (AS)and leaf area(AL)per unit ground area. Well-drained, younger Picea mariana daily JS was 47-64% greater than the older well-drained burn ages and younger poorly-drained stands were 64-68% greater than the two oldest poorly-drained stands. Daily EL in the well-drained Picea mariana stands was on average 12-33% higher in younger stand than in the two oldest stands whereas young, poorly-drained Picea mariana had 71% greater daily EL than the older stands. Well-drained Picea mariana trees had 52% higher daily EC than older trees and poorly-drained Picea mariana in the 1964 burn had 42-81% higher daily EC than the oldest stands. Populus tremuloides located in the two youngest stands had daily JS 38-58% greater rates than the 1930 burn, whereas daily EL and EC had no distint differences due to high interannual variability. Pinus banksiana experienced 21-33% greater daily JS in the 1989 burn than in the older 1964 burn for well- and poorly-drained sites. Poorly-drained Pinus banksiana trees from the older 1964 burn had 23-48% greater daily EL and 26-39% higher daily EC than the 1989 burn. Poorly-drained Picea mariana had 17-31% higher daily JS than the well-drained sites. Poorly-drained Picea mariana had 29-58% higher daily EL 42-50% higher daily EC than the well-drained trees. Poorly-drained Pinus banksiana on average had 27-28% higher daily JS than well-drained trees. Poorly-drained Pinus banskiana had 23.25% higher daily EL than well-drained trees and daily EC 32-67% lower than the well-drained trees. Drivers of these differences include midday leaf water potential, AS, and AL.

Potential energy barriers to ion transport within lipid bilayers. Studies with tetraphenylborate.

PubMed Central

Andersen, P S; Fuchs, M

1975-01-01

Tetraphenylborate-induced current transients were studied in lipid bilayers formed from bacterial phosphatidylethanolamine in decane. This ion movement was essentially confined to the membrane in terior during the current transients. Charge movement through the interior of the membrane during the current transients was studied as a function of the applied potential. The transferred charge approached an upper limit with increasing potential, which is interpreted to be the amount of charge due to tetraphenylborate ions absorbed into the boundary regions of the bilayer. A further analysis of the charge transfer as a function of potential indicates that the movement of tetraphenylborate ions is only influenced by a certain farction of the applied potential. For bacterial phosphatidylethanolamine bilayers the effective potential is 77 +/- 4% of the applied potential. The initial conductance and the time constant of the current transients were studied as a function of the applied potential using a Nernst-Planck electrodiffusion regime. It was found that an image-force potential energy barrier gave a good prediction of the observed behavior, provided that the effective potential was used in the calculations. We could not get a satisfactory prediction of the observed behavior with an Eyring rate theory model or a trapezoidal potential energy barrier. PMID:1148364

Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.;

The Astrophysical Multimessenger Observatory Network (AMON)

NASA Technical Reports Server (NTRS)

Smith. M. W. E.; Fox, D. B.; Cowen, D. F.; Meszaros, P.; Tesic, G.; Fixelle, J.; Bartos, I.; Sommers, P.; Ashtekar, Abhay; Babu, G. Jogesh;

Effect of abdominopelvic abscess drain size on drainage time and probability of occlusion

PubMed Central

Rotman, Jessica A.; Getrajdman, George I.; Maybody, Majid; Erinjeri, Joseph P.; Yarmohammadi, Hooman; Sofocleous, Constantinos T.; Solomon, Stephen B.; Boas, F. Edward

2016-01-01

Background The purpose of this study is to determine whether larger abdominopelvic abscess drains reduce the time required for abscess resolution, or the probability of tube occlusion. Methods 144 consecutive patients who underwent abscess drainage at a single institution were reviewed retrospectively. Results: Larger initial drain size did not reduce drainage time, drain occlusion, or drain exchanges (p>0.05). Subgroup analysis did not find any type of collection that benefitted from larger drains. A multivariate model predicting drainage time showed that large collections (>200 ml) required 16 days longer drainage time than small collections (<50 ml). Collections with a fistula to bowel required 17 days longer drainage time than collections without a fistula. Initial drain size and the viscosity of the fluid in the collection had no significant effect on drainage time in the multivariate model. Conclusions 8 F drains are adequate for initial drainage of most serous and serosanguineous collections. 10 F drains are adequate for initial drainage of most purulent or bloody collections. PMID:27634422

Modelling the transient behaviour of pulsed current tungsten-inert-gas weldpools

NASA Astrophysics Data System (ADS)

Wu, C. S.; Zheng, W.; Wu, L.

1999-01-01

A three-dimensional model is established to simulate the pulsed current tungsten-inert-gas (TIG) welding process. The goal is to analyse the cyclic variation of fluid flow and heat transfer in weldpools under periodic arc heat input. To this end, an algorithm, which is capable of handling the transience, nonlinearity, multiphase and strong coupling encountered in this work, is developed. The numerical simulations demonstrate the transient behaviour of weldpools under pulsed current. Experimental data are compared with numerical results to show the effectiveness of the developed model.

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

DOEpatents

McPherson, Brice; Killeen, Peter D.; Lostetter, Alex; Shaw, Robert; Passmore, Brandon; Hornberger, Jared; Berry, Tony M

2016-08-23

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.

Electrical probe characteristic recovery by measuring only one time-dependent parameter

NASA Astrophysics Data System (ADS)

Costin, C.; Popa, G.; Anita, V.

2016-03-01

Two straightforward methods for recovering the current-voltage characteristic of an electrical probe are proposed. Basically, they consist of replacing the usual power supply from the probe circuit with a capacitor which can be charged or discharged by the probe current drained from the plasma. The experiment requires the registration of only one time-dependent electrical parameter, either the probe current or the probe voltage. The corresponding time-dependence of the second parameter, the probe voltage, or the probe current, respectively, can be calculated using an integral or a differential relation and the current-voltage characteristic of the probe can be obtained.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

Drain tube migration into the anastomotic site of an esophagojejunostomy for gastric small cell carcinoma: short report

PubMed Central

2010-01-01

Background Intraluminal migration of a drain through an anastomotic site is a rare complication of gastric surgery. Case Presentation We herein report the intraluminal migration of a drain placed after a lower esophagectomy and total gastrectomy with Roux-en-Y anastomosis for gastric small cell carcinoma. Persistent drainage was noted 1 month after surgery, and radiographic studies were consistent with drain tube migration. Endoscopy revealed the drain had migrated into the esophagojejunostomy anastomotic site. The drain was removed from outside of abdominal wound while observing the anastomotic site endoscopically. The patient was treated with suction via a nasogastric tube drain for 5 days, and thereafter had an uneventful recovery. Conclusions Though drain tube migration is a rare occurrence, it should be considered in patients with persistent drainage who have undergone gastric surgery. PMID:20492665

Drain tube migration into the anastomotic site of an esophagojejunostomy for gastric small cell carcinoma: short report.

PubMed

Lai, Peng-Sheng; Lo, Chiao; Lin, Long-Wei; Lee, Po-Chu

2010-05-21

Intraluminal migration of a drain through an anastomotic site is a rare complication of gastric surgery. We herein report the intraluminal migration of a drain placed after a lower esophagectomy and total gastrectomy with Roux-en-Y anastomosis for gastric small cell carcinoma. Persistent drainage was noted 1 month after surgery, and radiographic studies were consistent with drain tube migration. Endoscopy revealed the drain had migrated into the esophagojejunostomy anastomotic site. The drain was removed from outside of abdominal wound while observing the anastomotic site endoscopically. The patient was treated with suction via a nasogastric tube drain for 5 days, and thereafter had an uneventful recovery. Though drain tube migration is a rare occurrence, it should be considered in patients with persistent drainage who have undergone gastric surgery.

Effects of a legal drain clean-out on wetlands and waterbirds: a recent case history

USGS Publications Warehouse

Krapu, Gary L.

1996-01-01

Repairs to legal drains in the United States may be regulated to protect adjacent wetlands under Section 404 of the Federal Water Pollution Control Act, commonly known as the Clean Water Act (CWA). However, few studies have examined effects of legal drain clean-outs on adjacent wetlands and associated migratory waterbird populations. I compare water regimes, cover-to-open water ratios, and waterbird use on Bruns, Big, Meszaros, and Kraft sloughs (BBMK) in Sargent County, North Dakota before and after the clean-out of Crete-Cogswell Drain No. 11, and relate wetland habitat loss to observed disease-related mortality among staging waterfowl in fall 1990 and spring 1991. Water regimes of BBMK were exceptionally stable, with few records of drawdowns before 1984 when the clean-out began. After the clean-out (1987-90), BBM were dry by mid-summer in all years and open area declined by 96% by 1990, whereas Kraft Slough (a control area) had water throughout all years and percent open area did not change. Numerous species of waterbirds nested in BBMK before the clean-out, and mean ranks of waterbird density were similar. After the clean-out, waterbirds failed to breed successfully in all years at BBM, and use as major waterfowl staging areas and for waterfowl hunting also ended. At Kraft Slough, use by breeding and staging waterbirds continued in all years, as did waterfowl hunting. Reduced access to fresh water after the Drain No. 11 clean-out may have contributed to a dieoff of 487 lesser snow geese (Chen caerulescens) from necrotic enteritis in Kraft Slough in November 1990. Loss of three major staging areas in Sargent County as a result of the drain clean-out has further concentrated migrant waterfowl, particularly during drought periods, increasing the magnitude of risk when epizootics occur in southeastern North Dakota. Ducks and geese banded in Sargent County have been recovered from 34 and 14 states, 7 and 6 provinces of Canada, and 13 and 1 other countries, respectively, indicating waterfowl populations from a wide area are potentially vulnerable to epizootics when crowded into limited roosting habitat. Despite causing the loss of wetland habitat for thousands of midcontinent waterfowl and other waterbirds, a Federal Court in North Dakota ruled that the clean-out of Drain No. 11 met the criteria necessary to be considered maintenance under Section 404 clause (f)(1)(c) and was not recaptured under clause (f)(2). This outcome suggests current law does not protect wetland functions needed to support migratory waterbird populations or associated recreational values when sites have become naturally restored through lack of maintenance of legal drains.

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

PubMed

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Dopamine alters glutamate receptor desensitization in retinal horizontal cells of the perch (Perca fluviatilis).

PubMed Central

Schmidt, K F; Kruse, M; Hatt, H

1994-01-01

The patch-clamp technique in combination with a fast liquid filament application system was used to study the effect of dopamine on the glutamate receptor desensitization in horizontal cells of the perch (Perca fluviatilis). Kinetics of ligand-gated ion channels in fish horizontal cells are modulated by dopamine. This modulation is presumably mediated by a cAMP-dependent protein phosphorylation. Before incubation with dopamine, the glutamate receptors of horizontal cells activate and desensitize with fast time constants. In the whole-cell recording mode, fast application of the agonists L-glutamate, quisqualate, or alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid prior to the dopamine incubation gives rise to fast transient currents with peak values of about 200 pA that desensitize within 100 ms. Kainate as agonist produced higher steady-state currents but no transient currents. After incubation of the cells with dopamine for 3 min, the desensitization was significantly reduced and the agonists L-glutamate, quisqualate, or alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid induced steady-state currents with amplitudes that were similar to the previously observed transient currents. Kainate-induced currents were only slightly affected. Fast desensitizing currents upon fast application of L-glutamate were also recorded from outside-out patches that were excised from horizontal cells before incubation with dopamine. The currents from excised patches desensitized to a steady-state level of about 0.2 of the peak amplitude with time constants of less than 2 ms. When the outside-out patches were excised from cells after dopamine incubation, steady-state currents were enhanced and no transient currents were observed. The results may indicate that the dopamine-dependent modulation of glutamate-induced currents, which is presumably mediated by a protein phosphorylation, is due to an alteration of the desensitization of the glutamate receptors. PMID:7520178

Intravenous anaesthetics inhibit nicotinic acetylcholine receptor-mediated currents and Ca2+ transients in rat intracardiac ganglion neurons

PubMed Central

Weber, Martin; Motin, Leonid; Gaul, Simon; Beker, Friederike; Fink, Rainer H A; Adams, David J

2004-01-01

The effects of intravenous (i.v.) anaesthetics on nicotinic acetylcholine receptor (nAChR)-induced transients in intracellular free Ca2+ concentration ([Ca2+]i) and membrane currents were investigated in neonatal rat intracardiac neurons. In fura-2-loaded neurons, nAChR activation evoked a transient increase in [Ca2+]I, which was inhibited reversibly and selectively by clinically relevant concentrations of thiopental. The half-maximal concentration for thiopental inhibition of nAChR-induced [Ca2+]i transients was 28 μM, close to the estimated clinical EC50 (clinically relevant (half-maximal) effective concentration) of thiopental. In fura-2-loaded neurons, voltage clamped at −60 mV to eliminate any contribution of voltage-gated Ca2+ channels, thiopental (25 μM) simultaneously inhibited nAChR-induced increases in [Ca2+]i and peak current amplitudes. Thiopental inhibited nAChR-induced peak current amplitudes in dialysed whole-cell recordings by ∼ 40% at −120, −80 and −40 mV holding potential, indicating that the inhibition is voltage independent. The barbiturate, pentobarbital and the dissociative anaesthetic, ketamine, used at clinical EC50 were also shown to inhibit nAChR-induced increases in [Ca2+]i by ∼40%. Thiopental (25 μM) did not inhibit caffeine-, muscarine- or ATP-evoked increases in [Ca2+]i, indicating that inhibition of Ca2+ release from internal stores via either ryanodine receptor or inositol-1,4,5-trisphosphate receptor channels is unlikely. Depolarization-activated Ca2+ channel currents were unaffected in the presence of thiopental (25 μM), pentobarbital (50 μM) and ketamine (10 μM). In conclusion, i.v. anaesthetics inhibit nAChR-induced currents and [Ca2+]i transients in intracardiac neurons by binding to nAChRs and thereby may contribute to changes in heart rate and cardiac output under clinical conditions. PMID:15644873

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

NASA Astrophysics Data System (ADS)

Zhang, Zhikuan; Zhang, Shengdong; Feng, Chuguang; Chan, Mansun

2003-10-01

In this paper, a source/drain structure separated from the silicon substrate by oxide isolation is fabricated and studied. The source/drain diffusion regions are connected to the shallow source/drain extension through a smaller opening defined by a double spacer process. Experimental results indicate that the source/drain on insulator significantly reduces the parasitic capacitance. Further optimization by simulation indicates a reduction of series resistance and band-to-band drain leakage at off-state can be achieved in extremely scaled devices. Compared with the conventional planner source/drain structure, the reduction of parasitic capacitance and series resistance can be as much as 80% and 30% respectively.

Prospective Validation of Optimal Drain Management "The 3 × 3 Rule" after Liver Resection.

PubMed

Mitsuka, Yusuke; Yamazaki, Shintaro; Yoshida, Nao; Masamichi, Moriguchi; Higaki, Tokio; Takayama, Tadatoshi

2016-09-01

We previously established an optimal postoperative drain management rule after liver resection (i.e., drain removal on postoperative day 3 if the drain fluid bilirubin concentration is <3 mg/dl) from the results of 514 drains of 316 consecutive patients. This test set predicts that 274 of 316 patients (87.0 %) will be safely managed without adverse events when drain management is performed without deviation from the rule. To validate the feasibility of our rule in recent time period. The data from 493 drains of 274 consecutive patients were prospectively collected. Drain fluid volumes, bilirubin levels, and bacteriological cultures were measured on postoperative days (POD) 1, 3, 5, and 7. The drains were removed according to the management rule. The achievement rate of the rule, postoperative adverse events, hospital stay, medical costs, and predictive value for reoperation according to the rule were validated. The rule was achieved in 255 of 274 (93.1 %) patients. The drain removal time was significantly shorter [3 days (1-30) vs. 7 (2-105), p < 0.01], drain fluid infection was less frequent [4 patients (1.5 %) vs. 58 (18.4 %), p < 0.01], postoperative hospital stay was shorter [11 days (6-73) vs. 16 (9-59), p = 0.04], and medical costs were decreased [1453 USD (968-6859) vs. 1847 (4667-9498), p < 0.01] in the validation set compared with the test set. Five patients who required reoperation were predicted by the drain-based information and treated within 2 days after operation. Our 3 × 3 rule is clinically feasible and allows for the early removal of the drain tube with minimum infection risk after liver resection.

Assessment of the use of selected chemical and microbiological constituents as indicators of wastewater in curtain drains from home sewage-treatment systems in Medina County, Ohio

USGS Publications Warehouse

Dumouchelle, Denise H.

2006-01-01

Many home sewage-treatment systems (HSTS) in Ohio use curtain or perimeter drains to depress the level of the subsurface water in and around the systems. These drains could possibly intercept partially untreated wastewater and release potential pathogens to ground-water and surface-water bodies. The quality of water in curtain drains from two different HSTS designs in Medina County, Ohio, was investigated using several methods. Six evaporation-transpiration-absorption (ETA) and five leach-line (LL) systems were investigated by determining nutrient concentrations, chloride/bromide ratios (Cl/Br), Escherichia coli (E. coli ) concentrations, coliphage genotyping, and genetic fingerprinting of E. coli. Water samples were collected at 11 sites and included samples from curtain drains, septic tanks, and residential water wells. Nitrate concentrations in the curtain drains ranged from 0.03 to 3.53 mg/L (milligrams per liter), as N. Concentrations of chloride in 10 of the 11 curtain drains ranged from 5.5 to 21 mg/L; the chloride concentration in the eleventh curtain drain was 340 mg/L. Bromide concentrations in 11 curtain drains ranged from 0.01 to 0.22 mg/L. Cl/Br ratios ranged from 86 to 2,000. F-specific coliphage were not found in any curtain-drain samples. Concentrations of E. coli in the curtain drains ranged from 1 to 760 colonies per 100 milliliters. The curtain-drain water-quality data were evaluated to determine whether HSTS-derived water was present in the curtain drains. Nutrient concentrations were too low to be of use in the determination. The Cl/Br ratios appear promising. Coliphage was not detected in the curtain drains, so genotyping could not be attempted. E. coli concentrations in the curtain drains were all less than those from the corresponding HSTS; only one sample exceeded the Ohio secondary-contact water-quality standard. The genetic fingerprinting data were inconclusive because multiple links between unrelated sites were found. Although the curtain-drain samples from the ETA systems showed somewhat more evidence of the presence of HSTS water than did the LL systems, most of the approaches were inconclusive by themselves. The best evidence of HSTS water, from the Cl/Br ratios, indicates that the water in 10 of the 11 curtain drains, at both HSTS types, was a mixture of dilute ground water and HSTS-derived water; the 11th drain also show some effects of the HSTS, although road salt-affected water may be present. Therefore, it appears that there is no difference between the ETA and LL systems with respect to the water quality in curtain drains.

Safety drain system for fluid reservoir

NASA Technical Reports Server (NTRS)

England, John Dwight (Inventor); Kelley, Anthony R. (Inventor); Cronise, Raymond J. (Inventor)

2012-01-01

A safety drain system includes a plurality of drain sections, each of which defines distinct fluid flow paths. At least a portion of the fluid flow paths commence at a side of the drain section that is in fluid communication with a reservoir's fluid. Each fluid flow path at the side communicating with the reservoir's fluid defines an opening having a smallest dimension not to exceed approximately one centimeter. The drain sections are distributed over at least one surface of the reservoir. A manifold is coupled to the drain sections.

Four Terminal Gallium Nitride MOSFETs

NASA Astrophysics Data System (ADS)

Veety, Matthew Thomas

All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric and metal gate. Preliminary devices exhibited high GaN-oxide interface state density, Dit, on the order of 1013 cm-2· eV-1. Additional experiments and device fabrication was focused on improving device performance through optimization of the ion implantation activation anneal as well as incorporation of a bulk p-type ohmic contact and migration to a thicker, lower defect density, HVPE-grown template substrate. The first reported MOSFET on HVPE grown GaN substrates (templates) is reported with peak measured drain current of 1.05 mA/mm and a normalized transconductance of 57 muS/mm. Fabricated devices exhibited large (greater than 1 muA) source-to-drain junction leakage which is attributed to low activated doping density in the MOCVD-grown p-type bulk. MOSFETs fabricated on template substrates show more than twice the measured drain current as similar devices fabricated on traditional MOCVD GaN on sapphire substrates for the same bias conditions. Also, template MOSFETs have decreased gate leakage which allowed for a much greater range of operation. This performance increase is attributed to a more than doubled effective channel mobility on template GaN MOSFETs due to decreased crystal defect scattering when compared to a MOCVD-grown GaN-on-sapphire MOSFET. Fabricated MOSFETs also exhibit decreased interface state density with lower bound of 2.2x1011 cm-2·eV-1 when compared to prelimary MOSFETs. This decrease is associated with the use of a sacrificial oxide cap during source/drain activation. Suggested work for continued research is also presented which includes experiments to improve source/drain ion implantation profile, utilization of selective area growth for the active area, improved n- and p-type ohmic contact resistance and investigation of alternate oxides.

Immersed transient eddy current flow metering: a calibration-free velocity measurement technique for liquid metals

NASA Astrophysics Data System (ADS)

Krauter, N.; Stefani, F.

2017-10-01

Eddy current flow meters are widely used for measuring the flow velocity of electrically conducting fluids. Since the flow induced perturbations of a magnetic field depend both on the geometry and the conductivity of the fluid, extensive calibration is needed to get accurate results. Transient eddy current flow metering has been developed to overcome this problem. It relies on tracking the position of an impressed eddy current system that is moving with the same velocity as the conductive fluid. We present an immersed version of this measurement technique and demonstrate its viability by numerical simulations and a first experimental validation.

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Carpenter, M. S.; Melloch, Michael R.; Cooper, James A., Jr.

1991-01-01

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Hyperpolarizing muscarinic responses of freshly dissociated rat hippocampal CA1 neurones.

PubMed Central

Wakamori, M; Hidaka, H; Akaike, N

1993-01-01

1. Intracellular mechanisms of the muscarinic acetylcholine (ACh) response were investigated in pyramidal neurones freshly dissociated from the rat hippocampal CA1 region. Current recordings were made in the whole-cell mode using the nystatin 'perforated'-patch technique, by which the muscarinic ACh response can be continuously recorded without so-called 'run-down' phenomenon. The amount of intracellular free Ca2+ ([Ca2+]i) was fluorometrically measured using fura-2. 2. In current clamp conditions, ACh induced a transient hyperpolarization accompanied by a decrease in membrane input resistance. 3. Under voltage clamp conditions at a holding potential (Vh) of -40 mV, ACh induced two types of muscarinic currents observed either alone or together: a transient outward current and a slowly activating sustained inward current. 4. The ACh-induced transient outward current reversed the direction at K+ equilibrium potential (EK), and the reversal potential (EACh) shifted 56.7 mV for a tenfold change of extracellular K+ concentration ([K+]o). 5. The ACh-induced transient outward current increased in a sigmoidal fashion with increase in ACh concentration, where the half-maximal concentration (EC50) and the Hill coefficient (n) were 8 x 10(-7) M and 1.9, respectively. Both muscarine and carbamylcholine mimicked the ACh response, but neither McN-A-343 (M1 agonist) nor oxotremorine (cardiac M2 agonist) induced any current. 6. Muscarinic antagonists reversibly blocked the ACh response in a concentration-dependent manner. The inhibitory potency was in the order of atropine > pirenzepine > AF-DX-116. 7. The ACh-induced transient outward current was never recorded when [Ca2+]i was chelated by the acetoxymethyl ester form of 1,2-bis(O-aminophenoxy)ethane-N,N,N',N'-tetraacetic acid (BAPTA AM). On the other hand, in Ca(2+)-free external solution containing 2 mM EGTA and 10 mM Mg2+, the ACh response was elicited by the first application and successive ACh applications did not induce any response. Fura-2 imaging showed that [Ca2+]i was increased when ACh was added to the external medium with or without Ca2+, though in Ca(2+)-free medium only the first application of ACh increased the [Ca2+]i. 8. The ACh response was not affected by pretreatment with pertussis toxin (PTX) but the inhibitory effect of ACh on the high-threshold Ca2+ channel was abolished completely. 9. Pretreatment with Li+ enhanced the amplitude of the transient outward current and the increase in [Ca2+]i induced by ACh. 10. The calmodulin antagonists W-7, chlorpromazine and trifluoperazine reversibly inhibited the ACh response in a concentration-dependent manner.(ABSTRACT TRUNCATED AT 400 WORDS) PMID:7504109

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi

We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4{sup ′}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5more » cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = −0.2 V and V{sub G} = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.« less

Containment vessel drain system

DOEpatents

Harris, Scott G.

2018-01-30

A system for draining a containment vessel may include a drain inlet located in a lower portion of the containment vessel. The containment vessel may be at least partially filled with a liquid, and the drain inlet may be located below a surface of the liquid. The system may further comprise an inlet located in an upper portion of the containment vessel. The inlet may be configured to insert pressurized gas into the containment vessel to form a pressurized region above the surface of the liquid, and the pressurized region may operate to apply a surface pressure that forces the liquid into the drain inlet. Additionally, a fluid separation device may be operatively connected to the drain inlet. The fluid separation device may be configured to separate the liquid from the pressurized gas that enters the drain inlet after the surface of the liquid falls below the drain inlet.

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

NASA Technical Reports Server (NTRS)

Wang, Y. C.; Bahrami, M.

1983-01-01

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Reducing the contact resistance in bottom-contact-type organic field-effect transitors using an AgO x interface layer

NASA Astrophysics Data System (ADS)

Minagawa, Masahiro; Kim, Yeongin; Claus, Martin; Bao, Zhenan

2017-09-01

Bottom-contact organic field-effect transistors (OFETs) are prepared by inserting an AgO x layer between a pentacene layer and the source-drain electrodes. The contact resistance in the device is ˜8.1 kΩ·cm with an AgO x layer oxidized for 60 s but reaches 116.9 kΩ·cm with a non-oxidized Ag electrode. The drain current and mobility in the OFETs with the AgO x layer increase with the oxidization time and then gradually plateau, and this trend strongly depends on the work function of the Ag surface. Further, the hole injection is enhanced by the presence of Ag2O but inhibited by the presence of AgO.

The Lymphatic Anatomy of the Breast and its Implications for Sentinel Lymph Node Biopsy: A Human Cadaver Study

PubMed Central

Pan, Wei-Ren; Mann, G. Bruce; Taylor, G. Ian

2007-01-01

Background Current understanding of the lymphatic system of the breast is derived mainly from the work of the anatomist Sappey in the 1850s, with many observations made during the development and introduction of breast lymphatic mapping and sentinel node biopsy contributing to our knowledge. Methods Twenty four breasts in 14 fresh human cadavers (5 male, 9 female) were studied. Lymph vessels were identified with hydrogen peroxide and injected with a lead oxide mixture and radiographed. The specimens were cross sectioned and radiographed to provide three dimensional images. Lymph (collecting) vessels were traced from the periphery to the first-tier lymph node. Results Lymph collecting vessels were found evenly spaced at the periphery of the anterior upper torso draining radially into the axillary lymph nodes. As they reached the breast some passed over and some through the breast parenchyma, as revealed in the cross-section studies. The pathways showed no significant difference between male and female specimens. We found also perforating lymph vessels that coursed beside the branches of the internal mammary vessels, draining into the ipsilateral internal mammary lymphatics. In some studies one sentinel node in the axilla drained almost the entire breast. In most more than one sentinel node was represented. Conclusion These anatomical findings are discordant with our current knowledge based on previous studies and demand closer examination by clinicians. These anatomical studies may help explain the percentage of false-negative sentinel node biopsy studies and suggest the peritumoral injection site for accurate sentinel lymph node detection. PMID:18043970

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gasparyan, F.; Forschungszentrum Jülich, Peter Grünberg Institute; Khondkaryan, H.

2016-08-14

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p{sup +}-p-p{sup +} field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculatingmore » the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10{sup 5}. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.« less

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

NASA Astrophysics Data System (ADS)

Martin, Maria J.; Pascual, Elena; Rengel, Raúl

2012-07-01

This paper presents a detailed study of the RF and noise performance of n-type Schottky barrier (SB) MOSFETs with a particular focus on the influence of the Schottky barrier height (SBH) on the main dynamic and noise figures of merit. With this aim, a 2D Monte Carlo simulator including tunnelling transport across Schottky interfaces has been developed, with special care to consider quantum transmission coefficients and the influence of image charge effects at the Schottky junctions. Particular attention is paid to the microscopic transport features, including carrier mean free paths or number of scattering events along the channel for investigating the optimization of the device topology and the strategic concepts related to the noise performance of this new architecture. A more effective control of the gate electrode over drain current for low SBH (discussed in terms of internal physical quantities) is translated into an enhanced transconductance gm, cut-off frequency fT, and non-quasistatic dynamic parameters. The drain and gate intrinsic noise sources show a noteworthy degradation with the SBH reduction due to the increased current, influence of hot carriers and reduced number of phonon scatterings. However, the results evidence that this effect is counterbalanced by the extremely improved dynamic performance in terms of gm and fT. Therefore, the deterioration of the intrinsic noise performance of the SB-MOSFET has no significant impact on high-frequency noise FoMs as NFmin, Rn and Gass for low SBH and large gate overdrive conditions. The role of the SBH on Γopt, optimum noise reactance and susceptance has been also analyzed.

A new offshore transport mechanism for shoreline-released tracer induced by transient rip currents and stratification

NASA Astrophysics Data System (ADS)

Kumar, Nirnimesh; Feddersen, Falk

2017-03-01

Offshore transport from the shoreline across the inner shelf of early-stage larvae and pathogens is poorly understood yet is critical for understanding larval fate and dilution of polluted shoreline water. With a novel coupling of a transient rip current (TRC) generating surf zone model and an ocean circulation model, we show that transient rip currents ejected onto a stratified inner shelf induce a new, previously unconsidered offshore transport pathway. For incident waves and stratification typical for Southern California in the fall, this mechanism subducts surf zone-origin tracers and transports them at least 800 m offshore at 1.2 km/d analogous to subduction at ocean fronts. This mechanism requires both TRCs and stratification. As TRCs are ubiquitous and the inner shelf is often stratified, this mechanism may have an important role in exporting early-stage larvae, pathogens, or other tracers onto the shelf.

TRAC-PF1 code verification with data from the OTIS test facility. [Once-Through Intergral System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Childerson, M.T.; Fujita, R.K.

1985-01-01

A computer code (TRAC-PF1/MOD1) developed for predicting transient thermal and hydraulic integral nuclear steam supply system (NSSS) response was benchmarked. Post-small break loss-of-coolant accident (LOCA) data from a scaled, experimental facility, designated the One-Through Integral System (OTIS), were obtained for the Babcock and Wilcox NSSS and compared to TRAC predictions. The OTIS tests provided a challenging small break LOCA data set for TRAC verification. The major phases of a small break LOCA observed in the OTIS tests included pressurizer draining and loop saturation, intermittent reactor coolant system circulation, boiler-condenser mode, and the initial stages of refill. The TRAC code wasmore » successful in predicting OTIS loop conditions (system pressures and temperatures) after modification of the steam generator model. In particular, the code predicted both pool and auxiliary-feedwater initiated boiler-condenser mode heat transfer.« less

A theoretical description of arterial pressure-flow relationships with verification in the isolated hindlimb of the dog.

PubMed

Jackman, A P; Green, J F

1990-01-01

We developed and tested a new two-compartment serial model of the arterial vasculature which unifies the capacitance (downstream arterial compliance) and waterfall (constant downstream pressure load) theories of blood flow through the arteries. In this model, blood drains from an upstream compliance through a resistance into a downstream compliance which empties into the veins through a downstream resistance which terminates in a constant pressure load. Using transient arterial pressure data obtained from an isolated canine hindlimb preparation, we tested this model, using a stop-flow technique. Numerical parameter estimation techniques were used to estimate the physiologic parameters of the model. The downstream compliance was found to be more than ten times larger than the upstream compliance and the constant pressure load was significantly above venous pressures but decreased in response to vasodilation. Our results support the applicability of both the capacitance and waterfall theories.