Organic Field Effect Transistors for Large Format Electronics

DTIC Science & Technology

2003-06-19

calculated output characteristics for a p-channel substrate insulator Organic layer Source Drain Gate 6 pentacene OFET with 2µm source to drain spacing...conventional transistors. Figure 3. Calculated output characteristics of a pentacene OFET with image charge induced contact barrier...Cross section view of a part of an OFET in the vicinity of a source or drain contact. local ordering due to surface energy effects. The development of

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

PubMed

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

PubMed Central

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

NASA Astrophysics Data System (ADS)

Chianese, F.; Candini, A.; Affronte, M.; Mishra, N.; Coletti, C.; Cassinese, A.

2018-05-01

In this work, we test graphene electrodes in nanometric channel n-type Organic Field Effect Transistors (OFETs) based on thermally evaporated thin films of the perylene-3,4,9,10-tetracarboxylic acid diimide derivative. By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond linearly to the applied bias, in contrast with the supralinear trend of gold-based transistors. Moreover, short channel effects are considerably suppressed in graphene electrode devices. More specifically, current on/off ratios independent of the channel length (L) and enhanced response for high longitudinal biases are demonstrated for L down to ˜140 nm. These results are rationalized taking into account the morphological and electronic characteristics of graphene, showing that the use of graphene electrodes may help to overcome the problem of Space Charge Limited Current in short channel OFETs.

Multifunctional Self-Assembled Monolayers for Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Cernetic, Nathan

Organic field effect transistors (OFETs) have the potential to reach commercialization for a wide variety of applications such as active matrix display circuitry, chemical and biological sensing, radio-frequency identification devices and flexible electronics. In order to be commercially competitive with already at-market amorphous silicon devices, OFETs need to approach similar performance levels. Significant progress has been made in developing high performance organic semiconductors and dielectric materials. Additionally, a common route to improve the performance metric of OFETs is via interface modification at the critical dielectric/semiconductor and electrode/semiconductor interface which often play a significant role in charge transport properties. These metal oxide interfaces are typically modified with rationally designed multifunctional self-assembled monolayers. As means toward improving the performance metrics of OFETs, rationally designed multifunctional self-assembled monolayers are used to explore the relationship between surface energy, SAM order, and SAM dipole on OFET performance. The studies presented within are (1) development of a multifunctional SAM capable of simultaneously modifying dielectric and metal surface while maintaining compatibility with solution processed techniques (2) exploration of the relationship between SAM dipole and anchor group on graphene transistors, and (3) development of self-assembled monolayer field-effect transistor in which the traditional thick organic semiconductor is replaced by a rationally designed self-assembled monolayer semiconductor. The findings presented within represent advancement in the understanding of the influence of self-assembled monolayers on OFETs as well as progress towards rationally designed monolayer transistors.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors.

PubMed

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-23

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-01

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Engineering the mobility increment in pentacene-based field-effect transistors by fast cooling of polymeric modification layer

NASA Astrophysics Data System (ADS)

Ling, Haifeng; Zhang, Chenxi; Chen, Yan; Shao, Yaqing; Li, Wen; Li, Huanqun; Chen, Xudong; Yi, Mingdong; Xie, Linghai; Huang, Wei

2017-06-01

In this work, we investigate the effect of the cooling rate of polymeric modification layers (PMLs) on the mobility improvement of pentacene-based organic field-effect transistors (OFETs). In contrast to slow cooling (SC), the OFETs fabricated through fast cooling (FC) with PMLs containing side chain-phenyl rings, such as polystyrene (PS) and poly (4-vinylphenol) (PVP), show an obvious mobility incensement compared with that of π-group free polymethylmethacrylate (PMMA). Atomic force microscopy (AFM) images and x-ray diffraction (XRD) characterizations have showed that fast-cooled PMLs could effectively enhance the crystallinity of pentacene, which might be related to the optimized homogeneity of surface energy on the surface of polymeric dielectrics. Our work has demonstrated that FC treatment could be a potential strategy for performance modulation of OFETs.

Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

NASA Astrophysics Data System (ADS)

Zhang, Yuan Yuan; Shi, Yumeng; Chen, Fuming; Mhaisalkar, S. G.; Li, Lain-Jong; Ong, Beng S.; Wu, Yiliang

2007-11-01

A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3‴-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

Device Engineered Organic Transistors for Flexible Sensing Applications.

PubMed

Zang, Yaping; Huang, Dazhen; Di, Chong-An; Zhu, Daoben

2016-06-01

Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Ou-Yang, Wei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

25th anniversary article: key points for high-mobility organic field-effect transistors.

PubMed

Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

2013-11-20

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scanning gate study of organic thin-film field-effect transistor

NASA Astrophysics Data System (ADS)

Aoki, N.; Sudou, K.; Matsusaki, K.; Okamoto, K.; Ochiai, Y.

2008-03-01

Scanning gate microscopy (SGM) has been applied for a study of organic thin-film field effect transistor (OFET). In contrast to one-dimensional nano-material such a carbon nanonube or nano-structure such a quantum point contact, visualization a transport characteristic of OFET channel is basically rather difficult since the channel width is much larger than the size of the SGM tip. Nevertheless, Schottky barriers are successfully visualized at the boundary between the metal electrodes and the OFET channel at ambient atmosphere.

Integrated materials design of organic semiconductors for field-effect transistors.

PubMed

Mei, Jianguo; Diao, Ying; Appleton, Anthony L; Fang, Lei; Bao, Zhenan

2013-05-08

The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm(2)/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.

Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.

PubMed

Kwon, Jimin; Takeda, Yasunori; Fukuda, Kenjiro; Cho, Kilwon; Tokito, Shizuo; Jung, Sungjune

2016-11-22

In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.

Organic field-effect transistors using single crystals.

PubMed

Hasegawa, Tatsuo; Takeya, Jun

2009-04-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

Organic field-effect transistors using single crystals

PubMed Central

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for ‘plastic electronics’. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. PMID:27877287

An analytical model for bio-electronic organic field-effect transistor sensors

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Giordano, Francesco; Magliulo, Maria; Palazzo, Gerardo; Torsi, Luisa

2013-09-01

A model for the electrical characteristics of Functional-Bio-Interlayer Organic Field-Effect Transistors (FBI-OFETs) electronic sensors is here proposed. Specifically, the output current-voltage characteristics of a streptavidin (SA) embedding FBI-OFET are modeled by means of the analytical equations of an enhancement mode p-channel OFET modified according to an ad hoc designed equivalent circuit that is also independently simulated with pspice. An excellent agreement between the model and the experimental current-voltage output characteristics has been found upon exposure to 5 nM of biotin. A good agreement is also found with the SA OFET parameters graphically extracted from the device transfer I-V curves.

Liquid crystal-on-organic field-effect transistor sensory devices for perceptive sensing of ultralow intensity gas flow touch.

PubMed

Seo, Jooyeok; Park, Soohyeong; Nam, Sungho; Kim, Hwajeong; Kim, Youngkyoo

2013-01-01

We demonstrate liquid crystal-on-organic field-effect transistor (LC-on-OFET) sensory devices that can perceptively sense ultralow level gas flows. The LC-on-OFET devices were fabricated by mounting LC molecules (4-cyano-4'-pentylbiphenyl - 5CB) on the polymer channel layer of OFET. Results showed that the presence of LC molecules on the channel layer resulted in enhanced drain currents due to a strong dipole effect of LC molecules. Upon applying low intensity nitrogen gas flows, the drain current was sensitively increased depending on the intensity and time of nitrogen flows. The present LC-on-OFET devices could detect extremely low level nitrogen flows (0.7 sccm-11 μl/s), which could not be felt by human skins, thanks to a synergy effect between collective behavior of LC molecules and charge-sensitive channel layer of OFET. The similar sensation was also achieved using the LC-on-OFET devices with a polymer film skin, suggesting viable practical applications of the present LC-on-OFET sensory devices.

Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics.

PubMed

Kim, Yebyeol; Bae, Jaehyun; Song, Hyun Woo; An, Tae Kyu; Kim, Se Hyun; Kim, Yun-Hi; Park, Chan Eon

2017-11-15

Electrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (μ FET ) of the EHD-jet printed OFETs was 5 times higher than the highest μ FET observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.

Repurposing compact discs as master molds to fabricate high-performance organic nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyunghun; Cho, Jinhwi; Jhon, Heesauk; Jeon, Jongwook; Kang, Myounggon; Eon Park, Chan; Lee, Jihoon; An, Tae Kyu

2017-05-01

Organic field-effect transistors (OFETs) have been developed over the past few decades due to their potential applications in future electronics such as wearable and foldable electronics. As the electrical performance of OFETs has improved, patterning organic semiconducting crystals has become a key issue for their commercialization. However, conventional soft lithographic techniques have required the use of expensive processes to fabricate high-resolution master molds. In this study, we demonstrated a cost-effective method to prepare nanopatterned master molds for the fabrication of high-performance nanowire OFETs. We repurposed commercially available compact discs (CDs) as master molds because they already have linear nanopatterns on their surface. Flexible nanopatterned templates were replicated from the CDs using UV-imprint lithography. Subsequently, 6,13-bis-(triisopropylsilylethynyl) pentacene nanowires (NWs) were grown from the templates using a capillary force-assisted lithographic technique. The NW-based OFETs showed a high average field-effect mobility of 2.04 cm2 V-1 s-1. This result was attributed to the high crystallinity of the NWs and to their crystal orientation favorable for charge transport.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

PubMed Central

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

PubMed

Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

2014-11-01

High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.

PubMed

Un, Hio-Ieng; Cheng, Peng; Lei, Ting; Yang, Chi-Yuan; Wang, Jie-Yu; Pei, Jian

2018-05-01

Organic field-effect transistors (OFETs) with impressively high hole mobilities over 10 cm 2 V -1 s -1 and electron mobilities over 1 cm 2 V -1 s -1 have been reported in the past few years. However, significant non-ideal electrical characteristics, e.g., voltage-dependent mobilities, have been widely observed in both small-molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor-unrelated, charge-trapping-induced non-ideality in OFETs is reported, and a revised model for the non-ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping-induced non-ideality exists in OFETs with different types of charge carriers (p-type or n-type), different types of dielectric materials (inorganic and organic) that contain different functional groups (OH, NH 2 , COOH, etc.). As fas as it is known, this is the first report for the non-ideal transport behaviors in OFETs caused by semiconductor-independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non-ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

PubMed Central

Xiang, Lanyi; Wang, Wei; Xie, Wenfa

2016-01-01

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V. PMID:27824101

Balanced Ambipolar Organic Field-Effect Transistors by Polymer Preaggregation.

PubMed

Janasz, Lukasz; Luczak, Adam; Marszalek, Tomasz; Dupont, Bertrand G R; Jung, Jaroslaw; Ulanski, Jacek; Pisula, Wojciech

2017-06-21

Ambipolar organic field-effect transistors (OFETs) based on heterojunction active films still suffer from an imbalance in the transport of electrons and holes. This problem is related to an uncontrolled phase separation between the donor and acceptor organic semiconductors in the thin films. In this work, we have developed a concept to improve the phase separation in heterojunction transistors to enhance their ambipolar performance. This concept is based on preaggregation of the donor polymer, in this case poly(3-hexylthiophene) (P3HT), before solution mixing with the small-molecular-weight acceptor, phenyl-C61-butyric acid methyl ester (PCBM). The resulting heterojunction transistor morphology consists of self-assembled P3HT fibers embedded in a PCBM matrix, ensuring balanced mobilities reaching 0.01 cm 2 /V s for both holes and electrons. These are the highest mobility values reported so far for ambipolar OFETs based on P3HT/PCBM blends. Preaggregation of the conjugated polymer before fabricating binary blends can be regarded as a general concept for a wider range of semiconducting systems applicable in organic electronic devices.

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

PubMed

Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

2018-04-24

Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

NASA Astrophysics Data System (ADS)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

PubMed

Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

2017-01-25

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

NASA Astrophysics Data System (ADS)

Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

2015-08-01

We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Lanyi; Ying, Jun; Han, Jinhua

2016-04-25

In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electronsmore » transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.« less

Thienoacene-based organic semiconductors.

PubMed

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Solution-processed field-effect transistors based on dihexylquaterthiophene films with performances exceeding those of vacuum-sublimed films.

PubMed

Leydecker, Tim; Trong Duong, Duc; Salleo, Alberto; Orgiu, Emanuele; Samorì, Paolo

2014-12-10

Solution-processable oligothiophenes are model systems for charge transport and fabrication of organic field-effect transistors (OFET) . Herein we report a structure vs function relationship study focused on the electrical characteristics of solution-processed dihexylquaterthiophene (DH4T)-based OFET. We show that by combining the tailoring of all interfaces in the bottom-contact bottom-gate transistor, via chemisorption of ad hoc molecules on electrodes and dielectric, with suitable choice of the film preparation conditions (including solvent type, concentration, volume, and deposition method), it is possible to fabricate devices exhibiting field-effect mobilities exceeding those of vacuum-processed DH4T transistors. In particular, the evaporation rate of the solvent, the processing temperature, as well as the concentration of the semiconducting material were found to hold a paramount importance in driving the self-assembly toward the formation of highly ordered and low-dimensional supramolecular architectures, confirming the kinetically governed nature of the self-assembly process. Among the various architectures, hundreds-of-micrometers long and thin DH4T crystallites exhibited enhanced charge transport.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

PubMed

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Organic permeable-base transistors - superb power efficiency at highest frequencies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Klinger, Markus P.; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

2016-11-01

Organic field-effect transistors (OFET) are important elements in thin-film electronics, being considered for flat-panel or flexible displays, radio frequency identification systems, and sensor arrays. To optimize the devices for high-frequency operation, the channel length, defined as the horizontal distance between the source and the drain contact, can be scaled down. Here, an architecture with a vertical current flow, in particular the Organic Permeable-Base Transistors (OPBT), opens up new opportunities, because the effective transit length in vertical direction is precisely tunable in the nanometer range by the thickness of the semiconductor layer. We present an advanced OPBT, competing with best OFETs while a low-cost, OLED-like fabrication with low-resolution shadow masks is used (Klinger et al., Adv. Mater. 27, 2015). Its design consists of a stack of three parallel electrodes separated by two semiconductor layers of C60 . The vertical current flow is controlled by the middle base electrode with nano-sized openings passivated by an native oxide. Using insulated layers to structure the active area, devices show an on/off ratio of 10⁶ , drive 11 A/cm² at an operation voltage of 1 V, and have a low subthreshold slope of 102 mV/decade. These OPBTs show a unity current-gain transit frequency of 2.2 MHz and off-state break-down fields above 1 MV/cm. Thus, our optimized setup does not only set a benchmark for vertical organic transistors, but also outperforms best lateral OFETs using similar low-cost structuring techniques in terms of power efficiency at high frequencies.

SiC Optically Modulated Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

2009-01-01

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification of the photon-detection signal. A family of operating curves characterizing the OFET can be generated in a series of measurements performed at different intensities of incident ultraviolet light.

Patterning technology for solution-processed organic crystal field-effect transistors

PubMed Central

Li, Yun; Sun, Huabin; Shi, Yi; Tsukagoshi, Kazuhito

2014-01-01

Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recentdevelopment in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed. PMID:27877656

Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

NASA Astrophysics Data System (ADS)

Liyana, V. P.; Stephania, A. M.; Shiju, K.; Predeep, P.

2015-06-01

Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (VT), on-off ratio (Ion/Ioff) and their comparative analysis is reported.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

PubMed

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors

NASA Astrophysics Data System (ADS)

Roh, Jeongkyun; Lee, Taesoo; Kang, Chan-Mo; Kwak, Jeonghun; Lang, Philippe; Horowitz, Gilles; Kim, Hyeok; Lee, Changhee

2017-04-01

We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.

The Influence of channel length to the characteristics of CuPc based OFET thin films

NASA Astrophysics Data System (ADS)

Sujarwata; Handayani, L.; Mosik; Fianti

2018-03-01

The main focus of this research is to characterize organic field effect transistor (OFET) thin films based on CuPc with a bottom-contact structure and varied channel length. OFET was prepared by Si substrate cleaning in the ultrasonic cleaner first, then deposition of the source and drain electrodes on the substrate with vacuum evaporation at room temperature, and finally CuPc thin film deposition among the source, drain, and gate electrodes. The distance between source anddrain electrodes is the channel length of the CuPc thin film. In this research, the channel length was varied; 100 μm, 200 μm and 300 μm, with the same active areas of 2.9-3.42 V and different current, IDS. The result showed that the shorter channel length causes, the bigger IDS flowing on the OFET

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization.

PubMed

Wu, Xiaohan; Chu, Yingli; Liu, Rui; Katz, Howard E; Huang, Jia

2017-12-01

Polymer dielectrics in organic field-effect transistors (OFETs) are essential to provide the devices with overall flexibility, stretchability, and printability and simultaneously introduce charge interaction on the interface with organic semiconductors (OSCs). The interfacial effect between various polymer dielectrics and OSCs significantly and intricately influences device performance. However, understanding of this effect is limited because the interface is buried and the interfacial charge interaction is difficult to stimulate and characterize. Here, this challenge is overcome by utilizing illumination to stimulate the interfacial effect in various OFETs and to characterize the responses of the effect by measuring photoinduced changes of the OFETs performances. This systemic investigation reveals the mechanism of the intricate interfacial effect in detail, and mathematically explains how the photosensitive OFETs characteristics are determined by parameters including polar group of the polymer dielectric and the OSC side chain. By utilizing this mechanism, performance of organic electronics can be precisely controlled and optimized. OFETs with strong interfacial effect can also show a signal additivity caused by repeated light pulses, which is applicable for photostimulated synapse emulator. Therefore, this work enlightens a detailed understanding on the interface effect and provides novel strategies for optimizing OFET photosensory performances.

High Performance Crystalline Organic Transistors and Circuit

DTIC Science & Technology

2009-10-14

this material into pentacene -based OFETs, low voltage operation is possible. 3 Figure 1: Device structure for a low voltage pentacene OFET...issues with the first SiO Z OPentacene Au Pentacene ZrO2 AuPd SiO2 4 film. Bilayer dielectrics exhibit lower defect-related leakage...effects, as pinholes or other defects in one layer may be isolated by the other layer. 350 Å of pentacene was thermally evaporated on the ZrO2 dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi

We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4{sup ′}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5more » cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = −0.2 V and V{sub G} = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.« less

Influence of polymer dielectrics on C60-based field-effect transistors

NASA Astrophysics Data System (ADS)

Zhou, Jianlin; Zhang, Fujia; Lan, Lifeng; Wen, Shangsheng; Peng, Junbiao

2007-12-01

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of C60 film and small number of traps at the interface of PMMA /C60 were obtained with high electron mobility of 0.66cm2/Vs in the PMMA transistor. The result suggests that the C60 semiconductor cooperating with polymer dielectric is a promising application in the fabrication of n-type organic transistors because of low threshold voltage and high electron mobility.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

High Performance Crystalline Organic Transistors and Circuit

DTIC Science & Technology

2011-08-02

pentacene -based OFETs, low voltage operation is possible. 3 Figure 1: Device structure for a low voltage pentacene OFET using a ZrO2 gate...first SiO Z OPentacene Au Pentacene ZrO2 AuPd SiO2 4 film. Bilayer dielectrics exhibit lower defect-related leakage effects, as pinholes or...other defects in one layer may be isolated by the other layer. 350 Å of pentacene was thermally evaporated on the ZrO2 dielectric at a rate of 0.1 Å

Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

DTIC Science & Technology

2010-03-31

in OFETs have been investigated extensively in the past couple of years. They are mainly attributed to the (i) charge trapping and release in the...This sharp rise in capacitance can be attributed due to trap charges or impurities such as ions which is most likely in the bulk of DNA-CTMA as well...5 Transient response of BiOFETs As mentioned before, charge trapping and release time can be strong function of applied voltage as well as device

Bar-Coated Ultrathin Semiconductors from Polymer Blend for One-Step Organic Field-Effect Transistors.

PubMed

Ge, Feng; Liu, Zhen; Lee, Seon Baek; Wang, Xiaohong; Zhang, Guobing; Lu, Hongbo; Cho, Kilwon; Qiu, Longzhen

2018-06-27

One-step deposition of bi-functional semiconductor-dielectric layers for organic field-effect transistors (OFETs) is an effective way to simplify the device fabrication. However, the proposed method has rarely been reported in large-area flexible organic electronics. Herein, we demonstrate wafer-scale OFETs by bar coating the semiconducting and insulating polymer blend solution in one-step. The semiconducting polymer poly(3-hexylthiophene) (P3HT) segregates on top of the blend film, whereas dielectric polymethyl methacrylate (PMMA) acts as the bottom layer, which is achieved by a vertical phase separation structure. The morphology of blend film can be controlled by varying the concentration of P3HT and PMMA solutions. The wafer-scale one-step OFETs, with a continuous ultrathin P3HT film of 2.7 nm, exhibit high electrical reproducibility and uniformity. The one-step OFETs extend to substrate-free arrays that can be attached everywhere on varying substrates. In addition, because of the well-ordered molecular arrangement, the moderate charge transport pathway is formed, which resulted in stable OFETs under various organic solvent vapors and lights of different wavelengths. The results demonstrate that the one-step OFETs have promising potential in the field of large-area organic wearable electronics.

The impact of carbon sp{sup 2} fraction of reduced graphene oxide on the performance of reduced graphene oxide contacted organic transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Narae; Department of Physics, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826; Khondaker, Saiful I., E-mail: saiful@ucf.edu

2014-12-01

One of the major bottlenecks in fabricating high performance organic field effect transistors (OFETs) is a large interfacial contact barrier between metal electrodes and organic semiconductors (OSCs) which makes the charge injection inefficient. Recently, reduced graphene oxide (RGO) has been suggested as an alternative electrode material for OFETs. RGO has tunable electronic properties and its conductivity can be varied by several orders of magnitude by varying the carbon sp{sup 2} fraction. However, whether the sp{sup 2} fraction of RGO in the electrode affects the performance of the fabricated OFETs is yet to be investigated. In this study, we demonstrate thatmore » the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp{sup 2} fraction of RGO. When compared to control palladium electrodes, the mobility of the OFETs shows an improvement of ∼200% for 61% sp{sup 2} fraction RGO, which further improves to ∼500% for 80% RGO electrode. Similar improvements were also observed in current on-off ratio, on-current, and transconductance. Our study suggests that, in addition to π-π interaction at RGO/pentacene interface, the tunable electronic properties of RGO electrode have a significant role in OFETs performance.« less

Development of high-performance printed organic field-effect transistors and integrated circuits.

PubMed

Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

2015-10-28

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

Coupling between electrolyte and organic semiconductor in electrolyte-gated organic field effect transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Biscarini, Fabio; Di Lauro, Michele; Berto, Marcello; Bortolotti, Carlo A.; Geerts, Yves H.; Vuillaume, Dominique

2016-11-01

Organic field effect transistors (OFET) operated in aqueous environments are emerging as ultra-sensitive biosensors and transducers of electrical and electrochemical signals from a biological environment. Their applications range from detection of biomarkers in bodily fluids to implants for bidirectional communication with the central nervous system. They can be used in diagnostics, advanced treatments and theranostics. Several OFET layouts have been demonstrated to be effective in aqueous operations, which are distinguished either by their architecture or by the respective mechanism of doping by the ions in the electrolyte solution. In this work we discuss the unification of the seemingly different architectures, such as electrolyte-gated OFET (EGOFET), organic electrochemical transistor (OECT) and dual-gate ion-sensing FET. We first demonstrate that these architectures give rise to the frequency-dependent response of a synapstor (synapse-like transistor), with enhanced or depressed modulation of the output current depending on the frequency of the time-dependent gate voltage. This behavior that was reported for OFETs with embedded metal nanoparticles shows the existence of a capacitive coupling through an equivalent network of RC elements. Upon the systematic change of ions in the electrolyte and the morphology of the charge transport layer, we show how the time scale of the synapstor is changed. We finally show how the substrate plays effectively the role of a second bottom gate, whose potential is actually fixed by the pH/composition of the electrolyte and the gate voltage applied.

Comparative study of organic transistors with different graphene electrodes fabricated using a simple patterning method

NASA Astrophysics Data System (ADS)

Kang, Narae; Smith, Christian W.; Ishigami, Masa; Khondaker, Saiful I.

2017-12-01

The performance of organic field-effect transistors (OFETs) can be greatly limited due to the inefficient charge injection caused by the large interfacial barrier at the metal/organic semiconductor interface. To improve this, two-dimensional graphene films have been suggested as alternative electrode materials; however, a comparative study of OFET performances using different types of graphene electrodes has not been systematically investigated. Here, we present a comparative study on the performance of pentacene OFETs using chemical vapor deposition (CVD) grown graphene and reduced graphene oxide (RGO) as electrodes. The large area electrodes were patterned using a simple and environmentally benign patterning technique. Although both the CVD graphene and RGO electrodes showed enhanced device performance compared to metal electrodes, we found the maximum performance enhancement from CVD grown graphene electrodes. Our study suggests that, in addition to the strong π-π interaction at the graphene/organic interface, the higher conductivity of the electrodes also plays an important role in the performance of OFETs.

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

PubMed Central

Sirringhaus, Henning

2014-01-01

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

Interfacial fields in organic field-effect transistors and sensors

NASA Astrophysics Data System (ADS)

Dawidczyk, Thomas J.

Organic electronics are currently being commercialized and present a viable alternative to conventional electronics. These organic materials offer the ability to chemically manipulate the molecule, allowing for more facile mass processing techniques, which in turn reduces the cost. One application where organic semiconductors (OSCs) are being investigated is sensors. This work evaluates an assortment of n- and p-channel semiconductors as organic field-effect transistor (OFET) sensors. The sensor responses to dinitrotoluene (DNT) vapor and solid along with trinitrotoluene (TNT) solid were studied. Different semiconductor materials give different magnitude and direction of electrical current response upon exposure to DNT. Additional OFET parameters---mobility and threshold voltage---further refine the response to the DNT with each OFET sensor requiring a certain gate voltage for an optimized response to the vapor. The pattern of responses has sufficient diversity to distinguish DNT from other vapors. To effectively use these OFET sensors in a circuit, the threshold voltage needs to be tuned for each transistor to increase the efficiency of the circuit and maximize the sensor response. The threshold voltage can be altered by embedding charges into the dielectric layer of the OFET. To study the quantity and energy of charges needed to alter the threshold voltage, charge carriers were injected into polystyrene (PS) and investigated with scanning Kelvin probe microscopy (SKPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using SKPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method. The process was further refined to create lateral heterojunctions that were actual working OFETs, consisting of a PS or poly (3-trifluoro)styrene (F-PS) gate dielectric and a pentacene OSC. The charge storage inside the dielectric was visualized with SKPM, correlated to a threshold voltage shift in the transistor operation, and related to bias stress as well. The SKPM method allows the dielectric/OSC interface of the OFET to be visualized without any alteration of the OFET. Furthermore, this technique allows for the observation of charge distribution between the two dielectric interfaces, PS and F-PS. The SKPM is used to visualize the charge from conventional gate biasing and also as a result of embedding charges deliberately into the dielectric to shift the threshold voltage. Conventional gate biasing shows considerable residual charge in the PS dielectric, which results in gate bias stress. Gate bias stress is one of the major hurdles left in the commercialization of OFETs. To prevent this bias stress, additives of different energy levels were inserted into the dielectric to limit the gate bias stress. Additionally, the dielectrics were pre-charged to try and prevent further bias stress. Neither pre-charging the dielectric or the addition of additive has been used in gate bias prevention, but both methods offer improved resistance to gate bias stress, and help to further refine the dielectric design.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Trapping effect of metal nanoparticle mono- and multilayer in the organic field-effect transistor

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Lin, Jack; Taguchi, Dai; Majková, Eva; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-03-01

The effect of silver nanoparticles self-assembled monolayer (Ag NPs SAM) on charge transport in pentacene organic field-effect transistors (OFET) was investigated by both steady-state and transient-state methods, which are current-voltage measurements in steady-state and time-resolved microscopic (TRM) second harmonic generation (SHG) in transient-state, respectively. The analysis of electronic properties revealed that OFET with SAM exhibited significant charge trapping effect due to the space-charge field formed by immobile charges. Lower transient-state mobility was verified by the direct probing of carrier motion by TRM-SHG technique. It was shown that the trapping effect rises together with increase of SAM layers suggesting the presence of traps in the bulk of NP films. The model based on the electrostatic charge barrier is suggested to explain the phenomenon.

Increased mobility and on/off ratio in organic field-effect transistors using low-cost guanine-pentacene multilayers

NASA Astrophysics Data System (ADS)

Shi, Wei; Zheng, Yifan; Taylor, André D.; Yu, Junsheng; Katz, Howard E.

2017-07-01

Layer-by-layer deposited guanine and pentacene in organic field-effect transistors (OFETs) is introduced. Through adjusting the layer thickness ratio of guanine and pentacene, the tradeoff of two electronic parameters in OFETs, charge carrier mobility and current on/off ratio, was controlled. The charge mobility was enhanced by depositing pentacene over and between guanine layers and by increasing the proportion of pentacene in the layer-by-layer system, while the current on/off ratio was increased via the decreased off current induced by the guanine layers. The tunable device performance was mainly ascribed to the trap and dopant neutralizing properties of the guanine layers, which would decrease the density of free hydroxyl groups in the OFETs. Furthermore, the cost of the devices could be reduced remarkably via the adoption of low-cost guanine.

Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors

NASA Astrophysics Data System (ADS)

Lee, Seon Jeng; Kim, Chaewon; Jung, Seok-Heon; Di Pietro, Riccardo; Lee, Jin-Kyun; Kim, Jiyoung; Kim, Miso; Lee, Mi Jung

2018-01-01

Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 °C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer. [Figure not available: see fulltext.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device andmore » thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.« less

Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor

NASA Astrophysics Data System (ADS)

Häusermann, R.; Batlogg, B.

2011-08-01

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric.

Effects of Humidity and Temperature on Orange Dye-Based Organic Field Effect Transistors Fabricated at Different Gravity

NASA Astrophysics Data System (ADS)

Fatima, N.; Ahmed, M. M.; Karimov, Kh. S.

2017-11-01

This study reports the fabrication of organic field effect transistors (OFETs) using 3-[ethyl[4-[(4-nitrophenyl)azo]phenyl]amino]propanenitrile, usually known as Orange-Dye 25 (OD) and its composite with sugar. The study investigated the heat- and humidity-dependent electrical characteristics of the fabricated devices. Fabrication was carried out from the aqueous solution of the materials using different gravity conditions, i.e., at positive (normal) gravity (+1 g) and at negative gravity (-1 g). A thin layer (10-15 μm) of OD or OD:sugar was deposited by drop-casting on pre-fabricated drain and source silver (Ag) electrodes having 30 μm separation and 2 mm length followed by aluminum (Al) thermal evaporation to achieve a Schottky barrier. Devices fabricated using OD at -1 g were more sensitive in capacitance-temperature and impedance-humidity relationships than those fabricated at +1 g. Moreover, OFETs fabricated at -1 g using OD:sugar offered capacitance-temperature sensitivity much higher than the devices fabricated at +1 g. It has been observed that, in the drop-casting method, the properties of OFETs are dependent upon gravity as well as the solution composition employed for channel definition.

Piezoelectric polymer gated OFET: Cutting-edge electro-mechanical transducer for organic MEMS-based sensors

PubMed Central

Thuau, Damien; Abbas, Mamatimin; Wantz, Guillaume; Hirsch, Lionel; Dufour, Isabelle; Ayela, Cédric

2016-01-01

The growth of micro electro-mechanical system (MEMS) based sensors on the electronic market is forecast to be invigorated soon by the development of a new branch of MEMS-based sensors made of organic materials. Organic MEMS have the potential to revolutionize sensor products due to their light weight, low-cost and mechanical flexibility. However, their sensitivity and stability in comparison to inorganic MEMS-based sensors have been the major concerns. In the present work, an organic MEMS sensor with a cutting-edge electro-mechanical transducer based on an active organic field effect transistor (OFET) has been demonstrated. Using poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) piezoelectric polymer as active gate dielectric in the transistor mounted on a polymeric micro-cantilever, unique electro-mechanical properties were observed. Such an advanced scheme enables highly efficient integrated electro-mechanical transduction for physical and chemical sensing applications. Record relative sensitivity over 600 in the low strain regime (<0.3%) was demonstrated, which represents a key-step for the development of highly sensitive all organic MEMS-based sensors. PMID:27924853

Piezoelectric polymer gated OFET: Cutting-edge electro-mechanical transducer for organic MEMS-based sensors.

PubMed

Thuau, Damien; Abbas, Mamatimin; Wantz, Guillaume; Hirsch, Lionel; Dufour, Isabelle; Ayela, Cédric

2016-12-07

The growth of micro electro-mechanical system (MEMS) based sensors on the electronic market is forecast to be invigorated soon by the development of a new branch of MEMS-based sensors made of organic materials. Organic MEMS have the potential to revolutionize sensor products due to their light weight, low-cost and mechanical flexibility. However, their sensitivity and stability in comparison to inorganic MEMS-based sensors have been the major concerns. In the present work, an organic MEMS sensor with a cutting-edge electro-mechanical transducer based on an active organic field effect transistor (OFET) has been demonstrated. Using poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) piezoelectric polymer as active gate dielectric in the transistor mounted on a polymeric micro-cantilever, unique electro-mechanical properties were observed. Such an advanced scheme enables highly efficient integrated electro-mechanical transduction for physical and chemical sensing applications. Record relative sensitivity over 600 in the low strain regime (<0.3%) was demonstrated, which represents a key-step for the development of highly sensitive all organic MEMS-based sensors.

Solvent-free directed patterning of a highly ordered liquid crystalline organic semiconductor via template-assisted self-assembly for organic transistors.

PubMed

Kim, Aryeon; Jang, Kwang-Suk; Kim, Jinsoo; Won, Jong Chan; Yi, Mi Hye; Kim, Hanim; Yoon, Dong Ki; Shin, Tae Joo; Lee, Myong-Hoon; Ka, Jae-Won; Kim, Yun Ho

2013-11-20

Highly ordered organic semiconductor micropatterns of the liquid-crystalline small molecule 2,7-didecylbenzothienobenzothiophene (C10 -BTBT) are fabricated using a simple method based on template-assisted self-assembly (TASA). The liquid crystallinity of C10 -BTBT allows solvent-free fabrication of high-performance printed organic field-effect transistors (OFETs). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-Stimulated Synaptic Devices Utilizing Interfacial Effect of Organic Field-Effect Transistors.

PubMed

Dai, Shilei; Wu, Xiaohan; Liu, Dapeng; Chu, Yingli; Wang, Kai; Yang, Ben; Huang, Jia

2018-06-14

Synaptic transistors stimulated by light waves or photons may offer advantages to the devices, such as wide bandwidth, ultrafast signal transmission, and robustness. However, previously reported light-stimulated synaptic devices generally require special photoelectric properties from the semiconductors and sophisticated device's architectures. In this work, a simple and effective strategy for fabricating light-stimulated synaptic transistors is provided by utilizing interface charge trapping effect of organic field-effect transistors (OFETs). Significantly, our devices exhibited highly synapselike behaviors, such as excitatory postsynaptic current (EPSC) and pair-pulse facilitation (PPF), and presented memory and learning ability. The EPSC decay, PPF curves, and forgetting behavior can be well expressed by mathematical equations for synaptic devices, indicating that interfacial charge trapping effect of OFETs can be utilized as a reliable strategy to realize organic light-stimulated synapses. Therefore, this work provides a simple and effective strategy for fabricating light-stimulated synaptic transistors with both memory and learning ability, which enlightens a new direction for developing neuromorphic devices.

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Liang; Dai, Gaole; Deng, Wei; Zhang, Xiujuan; Jie, Jiansheng; Zhang, Xiaohong

2017-10-01

Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm2 V-1 s-1, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm2 V-1 s-1 (average mobility 1.2 cm2 V-1 s-1) and 3.0 cm2 V-1 s-1 (average mobility 2.0 cm2 V-1 s-1), respectively. They both have a high on/off ratio ( I on/ I off) > 109. The performance can well satisfy the requirements for light-emitting diodes driving.

Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

PubMed

Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

2011-11-09

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

PubMed Central

Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

2014-01-01

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V−1 s−1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method. PMID:25428665

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

PubMed

Sirringhaus, Henning

2014-03-05

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3-4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm(2) V(-1) s(-1) have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling of static electrical properties in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Minari, Takeo; Tsukagoshi, Kazuhito; Gwoziecki, Romain; Coppard, Romain; Benwadih, Mohamed; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-07-01

A modeling of organic field-effect transistors' (OFETs') electrical characteristics is presented. This model is based on a one-dimensional (1-D) Poisson's equation solution that solves the potential profile in the organic semiconducting film. Most importantly, it demonstrates that, due to the common open-surface configuration used in organic transistors, the conduction occurs in the film volume below threshold. This is because the potential at the free surface is not fixed to zero but rather rises also with the gate bias. The tail of carrier concentration at the free surface is therefore significantly modulated by the gate bias, which partially explains the gate-voltage dependent contact resistance. At the same time in the so-called subthreshold region, we observe a clear charge trapping from the difference between C-V and I-V measurements; hence a traps study by numerical simulation is also performed. By combining the analytical modeling and the traps analysis, the questions on the C-V and I-V characteristics are answered. Finally, the combined results obtained with traps fit well the experimental data in both pentacene and bis(triisopropylsilylethynyl)-pentacene OFETs.

Polymer-dielectric molecular interactions in defect-free poly(3-hexylthiophene): dependence and consequences of regioregularity on transistor charge transport properties

NASA Astrophysics Data System (ADS)

Nawaz, Ali; Cruz-Cruz, Isidro; Rego, Jessica S.; Koehler, Marlus; Gopinathan, Sreelekha P.; Kumar, Anil; Hümmelgen, Ivo A.

2017-08-01

We investigate the molecular interaction of poly(3-hexylthiophene-2,5-diyl) (P3HT) molecules with polar functional groups of the dielectric surface, and its dependence on the regioregularity of P3HT. With this aim, we consider thickness-dependent molecular order of 100% regioregular defect-free P3HT (DF-P3HT) and 93% regioregular P3HT (LT-P3HT), deposited on top of cross-linked poly(vinyl alcohol) (cr-PVA) substrates. Intimate contact of P3HT molecules and cr-PVA surface defects affects the molecular order of P3HT differently, depending on the regioregularity. Consequently, these molecular order changes on the charge transport properties of organic field-effect transistors (OFETs) are investigated using four thicknesses (20, 40, 80 and 120 nm) of P3HT. As compared to other thicknesses, μ sat for 20 nm DF-P3HT OFETs shows further improvement, while the opposite occurs for 20 nm LT-P3HT OFETs. Depending on the regioregularity (and thus the chain orientation), P3HT molecules exhibit a difference in dipole moments. Consequently, the interaction of edge-on or face-on P3HT molecules with cr-PVA surface dipoles has different contributions towards the electrostatic energetic disorder at cr-PVA/P3HT interface. This subtle difference of behavior helps one to understand the huge spread of characteristics of P3HT based transistors found in literature.

Fabrication and analysis of polymer field-effect transistors

NASA Astrophysics Data System (ADS)

Scheinert, S.; Paasch, G.

2004-05-01

Parameters of organic field-effect transistors (OFET) achieved in recent years are promising enough for R & D activities towards a commercial low-cost polymer electronics. In spite of the fast progress, preparations dominated by trial and error are concentrated essentially on higher mobility polymers and shorter channel patterning, and the analysis of measured data is based on oversimplified models. Here ways to professionalize the research on polymer field-effect transistors are discussed exploiting experience accumulated in microelectronics. First of all, designing the devices before fabricating and subsequently analyzing them requires appropriate modelling. Almost independently from the nature of the transport process, the device physics is basically described by the drift-diffusion model, combined with non-degenerate carrier statistics. Therefore, with a modified interpretation of the so-called effective density of states, existing simulation tools can be applied, except for special cases which are discussed. Analytical estimates are helpful already in designing devices, and applied to experimental data they yield input parameters for the numerical simulations. Preparations of OFET's and capacitors with poly(3-ocylthiophene) (P3OT), poly(3-dodecylthiophene) P3HT, Arylamino-poly-(phenylene-vinylene) (PPV), poly(2-methoxy, 5 ethyl (2 hexyloxy) paraphenylenevinylene) MEH-PPV, and pentacene from a soluble precursor are described, with silicon dioxide (SiO2) or poly(4-vinylphenol) (P4VP) as gate insulator, and with rather different channel length. We demonstrate the advantage of combining all steps from design/fabrication to analysis of the experimental data with analytical estimates and numerical simulation. Of special importance is the connection between mobility, transistor channel length, cut-off frequency and operation voltage, which was the starting point for the development of a low-cost fabrication of high-performance submicrometer OFET's by an underetching technique. Finally results of simulation studies are presented concerning the formation of inversion layers, the influence of a trap distribution (as in the a-Si model) and of different types of source/drain contacts on top and bottom contact OFET's, and short-channel effects in submicrometer devices.

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Carrier Conduction and Light Emission by Modification of Poly(alkylfluorene) Interface under Vacuum Ultraviolet Light Irradiation

NASA Astrophysics Data System (ADS)

Ohmori, Yutaka; Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke

2013-03-01

Organic field effect transistors (OFETs) have been extensively studied for flexible electronics. The characteristics of poly(9,9-dioctylfluorenyl-2,7-dyl) (F8) modified by thermal or light are strongly dependent on the carrier transport and optical characteristics. We investigate all solution-processed OFETs with Ag nano-ink as gate electrodes patterned by Vacuum Ultraviolet (VUV) (172 nm). Bi-layer gate insulators of amorphous fluoro-polymer CYTOP (Asahi Glass Corp.) and poly(methylmethacrylate) (PMMA) were used. Top-gate-type OFETs with ITO source/drain electrode utilizing F8 or poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as an active layer were fabricated, and investigated the carrier conduction and emission characteristic. Without VUV irradiation, both OFETs showed the ambipolar and light-emitting characteristics. On the other hand, F8 devices with VUV exhibited only p-type conduction. The quenching centers were generated in F8 layer by VUV irradiation, which are related to the electron trap sites at the interface. OFETs with F8BT showed both p- and n-type conduction even after VUV. F8BT suffers less damage by VUV and maintain light emission. Light emitting transistors were realized utilizing F8BT patterned by VUV irradiation. This research was partially supported financially by MEXT. The authors thank Harima Chemicals Inc. for providing Ag nano-ink.

Broadband pH-Sensing Organic Transistors with Polymeric Sensing Layers Featuring Liquid Crystal Microdomains Encapsulated by Di-Block Copolymer Chains.

PubMed

Seo, Jooyeok; Song, Myeonghun; Jeong, Jaehoon; Nam, Sungho; Heo, Inseok; Park, Soo-Young; Kang, Inn-Kyu; Lee, Joon-Hyung; Kim, Hwajeong; Kim, Youngkyoo

2016-09-14

We report broadband pH-sensing organic field-effect transistors (OFETs) with the polymer-dispersed liquid crystal (PDLC) sensing layers. The PDLC layers are prepared by spin-coating using ethanol solutions containing 4-cyano-4'-pentyl-biphenyl (5CB) and a diblock copolymer (PAA-b-PCBOA) that consists of LC-philic block [poly(4-cyano-biphenyl-4-oxyundecyl acrylate) (PCBOA)] and acrylic acid block [poly(acrylic acid) (PAA)]. The spin-coated sensing layers feature of 5CB microdomains (<5 μm) encapsulated by the PAA-b-PCBOA polymer chains. The resulting LC-integrated-OFETs (PDLC-i-OFETs) can detect precisely and reproducibly a wide range of pH with only small amounts (10-40 μL) of analyte solutions in both static and dynamic perfusion modes. The positive drain current change is measured for acidic solutions (pH < 7), whereas basic solutions (pH > 7) result in the negative change of drain current. The drain current trend in the present PDLC-i-OFET devices is explained by the shrinking-expanding mechanism of the PAA chains in the diblock copolymer layers.

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

PubMed

Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

2014-04-23

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

PubMed Central

Nguyen, Ky V.; Payne, Marcia M.; Anthony, John E.; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-01-01

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs. PMID:27615358

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors.

PubMed

Nguyen, Ky V; Payne, Marcia M; Anthony, John E; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-09-12

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs.

Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

NASA Astrophysics Data System (ADS)

Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

2013-05-01

Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Organic field effect transistors - Study of performance parameters for different dielectric layer thickness

NASA Astrophysics Data System (ADS)

Assis, Anu; Shahul Hameed T., A.; Predeep, P.

2017-06-01

Mobility and current handling capabilities of Organic Field Effect Transistor (OFET) are vitally important parameters in the electrical performance where the material parameters and thickness of different layers play significant role. In this paper, we report the simulation of an OFET using multi physics tool, where the active layer is pentacene and Poly Methyl Methacrylate (PMMA) forms the dielectric. Electrical characterizations of the OFET on varying the thickness of the dielectric layer from 600nm to 400nm are simulated and drain current, transconductance and mobility are analyzed. In the study it is found that even though capacitance increases with reduction in dielectric layer thickness, the transconductance effect is reflected many more times in the mobility which in turn could be attributed to the variations in transverse electric field. The layer thickness below 300nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

NASA Astrophysics Data System (ADS)

Huang, Wei; Shi, Wei; Han, Shijiao; Yu, Junsheng

2013-05-01

Hysteresis mechanism of pentacene organic field-effect transistors (OFETs) with polyvinyl alcohol (PVA) and/or polymethyl methacrylate (PMMA) dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ˜ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

Extended Solution Gate OFET-based Biosensor for Label-free Glial Fibrillary Acidic Protein Detection with Polyethylene Glycol-Containing Bioreceptor Layer.

PubMed

Song, Jian; Dailey, Jennifer; Li, Hui; Jang, Hyun-June; Zhang, Pengfei; Wang, Jeff Tza-Huei; Everett, Allen D; Katz, Howard E

2017-05-25

A novel organic field effect transistor (OFET) -based biosensor is described for label-free glial fibrillary acidic protein (GFAP) detection. We report the first use of an extended solution gate structure where the sensing area and the organic semiconductor are separated, and a reference electrode is not needed. Different molecular weight polyethylene glycols (PEGs) are mixed into the bio-receptor layer to help extend the Debye screening length. The drain current change was significantly increased with the help of higher molecular weight PEGs, as they are known to reduce the dielectric constant. We also investigated the sensing performance under different gate voltage (V g ). The sensitivity increased after we decreased V g from -5 V to -2 V, because the lower V g is much closer to the OFET threshold voltage and the influence of attached negatively charged proteins become more apparent. Finally, the selectivity experiments toward different interferents were performed. The stability and selectivity are promising for clinical applications.

S,N-Heteroacene-Based Copolymers for Highly Efficient Organic Field Effect Transistors and Organic Solar Cells: Critical Impact of Aromatic Subunits in the Ladder π-System.

PubMed

Chung, Chin-Lung; Chen, Hsieh-Chih; Yang, Yun-Siou; Tung, Wei-Yao; Chen, Jian-Wei; Chen, Wen-Chang; Wu, Chun-Guey; Wong, Ken-Tsung

2018-02-21

Three novel donor-acceptor alternating polymers containing ladder-type pentacyclic heteroacenes (PBo, PBi, and PT) are synthesized, characterized, and further applied to organic field effect transistors (OFETs) and polymer solar cells. Significant aspects of quinoidal characters, electrochemical properties, optical absorption, frontier orbitals, backbone coplanarity, molecular orientation, charge carrier mobilities, morphology discrepancies, and the corresponding device performances are notably different with various heteroarenes. PT exhibits a stronger quinoidal mesomeric structure, linear and coplanar conformation, smooth surface morphology, and better bimodal crystalline structures, which is beneficial to extend the π-conjugation and promotes charge transport via 3-D transport pathways and in consequence improves overall device performances. Organic photovoltaics based on the PT polymer achieve a power conversion efficiency of 6.04% along with a high short-circuit current density (J SC ) of 14.68 mA cm -2 , and a high hole mobility of 0.1 cm 2 V -1 s -1 is fulfilled in an OFET, which is superior to those of its counterparts, PBi and PBo.

Lateral and Vertical Organic Transistors

NASA Astrophysics Data System (ADS)

Al-Shadeedi, Akram

An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at high doping concentrations. In subsequent chapters, the working mechanisms of OPBTs are discussed. OPBTs consist of two Schottky diodes (top and bottom diode), and the charge transport in these C60-based Schottky diodes is studied first. Two transport regimes can be distinguished in forward direction - injection limited currents (ILCs) and space charge limited currents (SCLCs). It is found that the current increases exponentially with applied voltage in the ILC regime and depends quadratically on the applied voltage in the SCLC regime. Furthermore, it is observed that the forward and backward currents of the Schottky diode are increased by decreasing the C60 layer thickness, increasing the active area, and increasing the temperature. Furthermore, in order to reach a high performance, various treatments have been applied. Air exposure, a variation of the thickness of the top electrode, as well as annealing of the diodes are used to optimize the diodes. OPBTs are processed by using the semiconductor C60 due its high charge carrier mobility and good film-forming properties. Again, the working mechanism of OPBTs is studied by electrical characterization (base-sweep measurements and output characteristics). To achieve a high performance of OPBTs, various treatments and techniques have been applied. The annealing of the OPBTs after fabrication changes the morphology of the base electrode. Thus, openings (pinholes) are formed in the base electrode, which enables a high current transfer from the upper to lower semiconductor layer. The formation of openings is proved by analyzing SEM and TEM image of the base electrode. Adding a doped layer at the emitter is another process to optimize the OPBTs. The doped layer ensures a high charge carrier injection at the emitter, leading to a high transmission and current gain. Furthermore, it has been observed that the ON/OFF ratio and transconductance of OPBTs increases by decreasing their active area. A very high transconductance gm of 37 S/cm2 is reached, which has the potential to boost the switching speed of organic transistors to 5 MHz. Furthermore, it is shown that the base electrode thickness is an essential parameter for OPBTs. The current gain beta decreases by increasing thickness of base electrode, whereas the ON/OFF ratio increases for thicker base electrodes.

Electron Transporting Semiconductor Dielectric Intramolecular

DTIC Science & Technology

2012-04-27

gate dielectric, and the capacitance times mobility was 80 nS/V (10x typical pentacene /oxide), stable to heating to 70 °C in air. Remarkably...oxide/ Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices” Adv. Funct. Mater. 18, 1832-1839 (2008) Sun, J...case of layered OSC OFETs. This proposal is somewhat different from a model by deLeeuw for amorphous OFETs13 in which carriers would be locally

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

NASA Astrophysics Data System (ADS)

Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

2017-10-01

Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging

NASA Astrophysics Data System (ADS)

Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2017-11-01

By using the charge modulated reflectance (CMR) imaging technique, charge distribution in the pentacene organic field-effect transistor (OFET) with a ferroelectric gate insulator [P(VDF-TrFE)] was investigated in terms of polarization reversal of the P(VDF-TrFE) layer. We studied the polarization reversal process and the carrier spreading process in the OFET channel. The I-V measurement showed a hysteresis behavior caused by the spontaneous polarization of P(VDF-TrFE), but the hysteresis I-V curve changes depending on the applied drain bias, possibly due to the gradual shift of the polarization reversal position in the OFET channel. CMR imaging visualized the gradual shift of the polarization reversal position and showed that the electrostatic field formed by the polarization of P(VDF-TrFE) contributes to hole and electron injection into the pentacene layer and the carrier distribution is significantly dependent on the direction of the polarization. The polarization reversal position in the channel region is governed by the electrostatic potential, and it happens where the potential reaches the coercive voltage of P(VDF-TrFE). The transmission line model developed on the basis of the Maxwell-Wagner effect element analysis well accounts for this polarization reversal process in the OFET channel.

Coupling between Transport and Injection Properties of Pentacene Field-Effect Transistors with Different Morphologies

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-08-01

We investigated the injection and transport properties of pentacene organic field-effect transistors (OFETs) with inclined and lamellar pentacene grains at various mutual ratios. Although the threshold voltage was conserved and no additional trapping on grain boundaries was suggested from the current-voltage measurements, the contact resistance and mobility increased linearly with the lamellar phase content. We showed that a model based on the coupling between both transport and injection properties via a space charge field caused by injected and trapped carriers accounts for these results.

Organic semiconductors based on [1]benzothieno[3,2-b][1]benzothiophene substructure.

PubMed

Takimiya, Kazuo; Osaka, Itaru; Mori, Takamichi; Nakano, Masahiro

2014-05-20

The design, synthesis, and characterization of organic semiconductors applicable to organic electronic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs), had been one of the most important topics in materials chemistry in the past decade. Among the vast number of materials developed, much expectation had been placed on thienoacenes, which are rigid and planar structures formed by fusing thiophenes and other aromatic rings, as a promising candidate for organic semiconductors for high-performance OFETs. However, the thienoacenes examined as an active material in OFETs in the 1990s afforded OFETs with only moderate hole mobilities (approximately 0.1 cm(2) V(-1) s(-1)). We speculated that this was due to the sulfur atoms in the thienoacenes, which hardly contributed to the intermolecular orbital overlap in the solid state. On the other hand, we have focused on other types of thienoacenes, such as [1]benzothieno[3,2-b][1]benzothiophene (BTBT), which seem to have appropriate HOMO spatial distribution for effective intermolecular orbital overlap. In fact, BTBT derivatives and their related materials, including dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), have turned out to be superior organic semiconductors, affording OFETs with very high mobilities. To illustrate some examples, we have developed 2,7-diphenyl BTBT (DPh-BTBT) that yields vapor-deposited OFETs having mobilities of up to 2.0 cm(2) V(-1) s(-1) under ambient conditions, highly soluble dialkyl-BTBTs (Cn-BTBTs) that afford solution-processed OFETs with mobilities higher than 1.0 cm(2) V(-1) s(-1), and DNTT and its derivatives that yield OFETs with even higher mobilities (>3.0 cm(2) V(-1) s(-1)) and stability under ambient conditions. Such high performances are rationalized by their solid-state electronic structures that are calculated based on their packing structures: the large intermolecular orbital overlap and the isotropic two-dimensional electronic structure are the key regardless of the molecular size and substituents on the BTBT and its related thienoacene cores. Along with the discovery of such attracting performances, versatile and practical methods for the synthesis of BTBT and its derivatives, and the π-extended derivatives including DNTT, dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT), and the thienoacenes with two thieno[3,2-b]thiophene moieties, have been developed. In addition, the materials have been recently utilized in sophisticated devices and circuits, including all-printed transistor arrays, flexible circuits on ultrathin plastic substrates, and biomedical applications, underscoring their promise as practical semiconductors for electronic device applications. These exciting results of the present BTBT-based materials are expected to open doors to new horizons of organic semiconductors in terms of practical application and the design and synthesis of far more superior materials.

Precise Side-Chain Engineering of Thienylenevinylene-Benzotriazole-Based Conjugated Polymers with Coplanar Backbone for Organic Field Effect Transistors and CMOS-like Inverters.

PubMed

Lee, Min-Hye; Kim, Juhwan; Kang, Minji; Kim, Jihong; Kang, Boseok; Hwang, Hansu; Cho, Kilwon; Kim, Dong-Yu

2017-01-25

Two donor-acceptor (D-A) alternating conjugated polymers based on thienylenevinylene-benzotriazole (TV-BTz), PTV6B with a linear side chain and PTVEhB with a branched side chain, were synthesized and characterized for organic field effect transistors (OFETs) and complementary metal-oxide-semiconductor (CMOS)-like inverters. According to density functional theory (DFT), polymers based on TV-BTz exhibit a coplanar and rigid structure with no significant twists, which could cause to an increase in charge-carrier mobility in OFETs. Alternating alkyl side chains of the polymers impacted neither the band gap nor the energy level. However, it significantly affected the morphology and crystallinity when the polymer films were thermally annealed. To investigate the effect of thermal annealing on the morphology and crystallinity, we characterized the polymer films using atomic force microscopy (AFM) and 2D-grazing incidence X-ray diffraction (2D-GIWAXD). Fibrillary morphologies with larger domains and increased crystallinity were observed in the polymer films after thermal annealing. These polymers exhibited improved charge-carrier mobilities in annealed films at 200 °C and demonstrated optimal OFET device performance with p-type transport characteristics with charge-carrier mobilities of 1.51 cm 2 /(V s) (PTV6B) and 2.58 cm 2 /(V s) (PTVEhB). Furthermore, CMOS-like inorganic (ZnO)-organic (PTVEhB) hybrid bilayer inverter showed that the inverting voltage (V inv ) was positioned near the ideal switching point at half (1/2) of supplied voltage (V DD ) due to fairly balanced p- and n-channels.

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Treesearch

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2015-01-01

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, A; Lin, H; Rubio-Sanchez, J

Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less

Atomically-thin molecular layers for electrode modification of organic transistors

NASA Astrophysics Data System (ADS)

Gim, Yuseong; Kang, Boseok; Kim, Bongsoo; Kim, Sun-Guk; Lee, Joong-Hee; Cho, Kilwon; Ku, Bon-Cheol; Cho, Jeong Ho

2015-08-01

Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03307a

Fabrication of organic FETs based on printing techniques and the improvement of FET properties by the insertion of solution-processable buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Kanamori, Akira

2016-04-01

In this study, we developed multilayer deposition and patterning processes that can be used to fabricate all-printed, organic field-effect transistors (OFETs) on the basis of vacuum-free, solution-processable soft-lithography techniques. We have used regioregular poly(3-hexylthiophene) (P3HT) as a soluble p-type polymer semiconductor and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as a soluble n-type semiconductor, and cross-linked poly(vinyl phenol) (CL-PVP) as a low-temperature (<150 °C)-curable soluble polymer gate insulator. We have compared the electrical properties of OFETs with multiwalled carbon nanotubes (MWCNTs), silver nanoparticles (NPs), and their composites (or multilayers) as printed source-drain (S-D) electrodes in order to fabricate vacuum-free, all-printed OFETs. The P3HT-OFETs with MWCNT S-D electrodes exhibited higher hole mobility and on/off ratios than the devices with Ag NP S-D electrodes owing to better contact at the MWCNT/P3HT interface. On the other hand, Ag/molybdenum oxide (MoO3) S-D electrodes considerably enhanced the hole injection and caused the reduction in the on/off ratio and the difficulty in turning off the devices. The PCBM-OFETs with MWCNT S-D electrodes also exhibited higher electron mobility that is almost comparable to that of P3HT-OFETs and lower threshold voltage, which was considered to be due to the enhanced electron injection at the electrode interface.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance.

PubMed

Hutchins, Daniel Orrin; Weidner, Tobias; Baio, Joe; Polishak, Brent; Acton, Orb; Cernetic, Nathan; Ma, Hong; Jen, Alex K-Y

2013-01-04

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH 2 ) 12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm 2 V -1 s -1 . It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm 2 V -1 s -1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.

Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance

PubMed Central

Hutchins, Daniel Orrin; Weidner, Tobias; Baio, Joe; Polishak, Brent; Acton, Orb; Cernetic, Nathan; Ma, Hong; Jen, Alex K.-Y.

2013-01-01

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH2)12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm2 V−1 s−1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm2 V−1 s−1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed. PMID:24086795

Surface-enhanced Raman spectroscopic studies of the Au-pentacene interface: a combined experimental and theoretical investigation.

PubMed

Adil, D; Guha, S

2013-07-28

It has recently been shown [D. Adil and S. Guha, J. Phys. Chem. C 116, 12779 (2012)] that a large enhancement in the Raman intensity due to surface-enhanced Raman scattering (SERS) is observed from pentacene when probed through the Au contact in organic field-effect transistors (OFET) structures. Here, the SERS spectrum is shown to exhibit a high sensitivity to disorder introduced in the pentacene film by Au atoms. The Raman signature of the metal-semiconductor interface in pentacene OFETs is calculated with density-functional theory by explicitly considering the Au-pentacene interaction. The observed enhancement in the 1380 cm(-1) and the 1560 cm(-1) regions of the experimental Raman spectrum of pentacene is successfully modeled by Au-pentacene complexes, giving insights into the nature of disorder in the pentacene sp(2) network. Finally, we extend our previous work on high-operating voltage pentacene OFETs to low-operating voltage pentacene OFETs. No changes in the SERS spectra before and after subjecting the OFETs to a bias stress are observed, concurrent with no degradation in the threshold voltage. This shows that bias stress induced performance degradation is, in part, caused by field-induced structural changes in the pentacene molecule. Thus, we confirm that the SERS spectrum can be used as a visualization tool for correlating transport properties to structural changes, if any, in organic semiconductor based devices.

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

NASA Astrophysics Data System (ADS)

Obaidulla, Sk Md; Singh, Subhash; Mohapatra, Y. N.; Giri, P. K.

2018-01-01

High bias-stress stability and low threshold voltage (V th) shift under ambient conditions are highly desirable for practical applications of organic field-effect transistors (OFETs). We demonstrate here a 20-fold enhancement in the bias-stress stability for hexamethyledisilazane (HMDS) treated vanadium (IV) oxide phthalocyanine (VOPc) based OFETs as compared to the bare VOPc case under ambient conditions. VOPc based OFETs were fabricated on bare (non treated) SiO2 and a HMDS monolayer passivated SiO2 layer, with an operating voltage of 40 V. The devices with top contact gold (Au) electrodes exhibit excellent p-channel behavior with a moderate hole mobility for the HMDS-treated device. It is demonstrated that the time dependent ON-current decay and V th shift can be effectively controlled by using self-assembled monolayers of HMDS on the VOPc layer. For the HMDS-treated case, the bias stress stability study shows the stretched exponential decay of drain current by only ~15% during the long-term operation with constant bias voltage under ambient conditions, while it shows a large decay of  >70% for the nontreated devices operated for 1000 s. The corresponding characteric decay time constant (τ) is 104 s for the HMDS treated case, while that of the the non-treated SiO2 case is only ~480 s under ambient conditions. The inferior performance of the device with bare SiO2 is traced to the charge trapping at the voids in the inter-grain region of the films, while it is almost negligible for the HMDS-treated case, as confirmed from the AFM and XRD analyses. It is believed that HMDS treatment provides an excellent interface with a low density of traps and passivates the dangling bonds, which improve the charge transport characteristics. Also, the surface morphology of the VOPc film clearly influences the device performance. Thus, the HMDS treatment provides a very attractive approach for attaining long-term air stability and a low V th shift for the VOPc based OFET devices.

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope.

PubMed

Yang, Fangxu; Sun, Lingjie; Han, Jiangli; Li, Baili; Yu, Xi; Zhang, Xiaotao; Ren, Xiaochen; Hu, Wenping

2018-03-06

Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO x dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO x high- k dielectric by anodization. The ultraflat AlO x /SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.

Chemical and engineering approaches to enable organic field-effect transistors for electronic skin applications.

PubMed

Sokolov, Anatoliy N; Tee, Benjamin C-K; Bettinger, Christopher J; Tok, Jeffrey B-H; Bao, Zhenan

2012-03-20

Skin is the body's largest organ and is responsible for the transduction of a vast amount of information. This conformable material simultaneously collects signals from external stimuli that translate into information such as pressure, pain, and temperature. The development of an electronic material, inspired by the complexity of this organ is a tremendous, unrealized engineering challenge. However, the advent of carbon-based electronics may offer a potential solution to this long-standing problem. In this Account, we describe the use of an organic field-effect transistor (OFET) architecture to transduce mechanical and chemical stimuli into electrical signals. In developing this mimic of human skin, we thought of the sensory elements of the OFET as analogous to the various layers and constituents of skin. In this fashion, each layer of the OFET can be optimized to carry out a specific recognition function. The separation of multimodal sensing among the components of the OFET may be considered a "divide and conquer" approach, where the electronic skin (e-skin) can take advantage of the optimized chemistry and materials properties of each layer. This design of a novel microstructured gate dielectric has led to unprecedented sensitivity for tactile pressure events. Typically, pressure-sensitive components within electronic configurations have suffered from a lack of sensitivity or long mechanical relaxation times often associated with elastomeric materials. Within our method, these components are directly compatible with OFETs and have achieved the highest reported sensitivity to date. Moreover, the tactile sensors operate on a time scale comparable with human skin, making them ideal candidates for integration as synthetic skin devices. The methodology is compatible with large-scale fabrication and employs simple, commercially available elastomers. The design of materials within the semiconductor layer has led to the incorporation of selectivity and sensitivity within gas-sensing devices and has enabled stable sensor operation within aqueous media. Furthermore, careful tuning of the chemical composition of the dielectric layer has provided a means to operate the sensor in real time within an aqueous environment and without the need for encapsulation layers. The integration of such devices as electronic mimics of skin will require the incorporation of biocompatible or biodegradable components. Toward this goal, OFETs may be fabricated with >99% biodegradable components by weight, and the devices are robust and stable, even in aqueous environments. Collectively, progress to date suggests that OFETs may be integrated within a single substrate to function as an electronic mimic of human skin, which could enable a large range of sensing-related applications from novel prosthetics to robotic surgery.

Crystalline Organic Pigment-Based Field-Effect Transistors.

PubMed

Zhang, Haichang; Deng, Ruonan; Wang, Jing; Li, Xiang; Chen, Yu-Ming; Liu, Kewei; Taubert, Clinton J; Cheng, Stephen Z D; Zhu, Yu

2017-07-05

Three conjugated pigment molecules with fused hydrogen bonds, 3,7-diphenylpyrrolo[2,3-f]indole-2,6(1H,5H)-dione (BDP), (E)-6,6'-dibromo-[3,3'-biindolinylidene]-2,2'-dione (IIDG), and 3,6-di(thiophen-2-yl)-2,5-dihydropyrrolo-[3,4-c]pyrrole-1,4-dione (TDPP), were studied in this work. The insoluble pigment molecules were functionalized with tert-butoxylcarbonyl (t-Boc) groups to form soluble pigment precursors (BDP-Boc, IIDG-Boc, and TDPP-Boc) with latent hydrogen bonding. The single crystals of soluble pigment precursors were obtained. Upon simple thermal annealing, the t-Boc groups were removed and the soluble pigment precursor molecules with latent hydrogen bonding were converted into the original pigment molecules with fused hydrogen bonding. Structural analysis indicated that the highly crystalline soluble precursors were directly converted into highly crystalline insoluble pigments, which are usually only achievable by gas-phase routes like physical vapor transport. The distinct crystal structure after the thermal annealing treatment suggests that fused hydrogen bonding is pivotal for the rearrangement of molecules to form a new crystal in solid state, which leads to over 2 orders of magnitude enhancement in charge mobility in organic field-effect transistor (OFET) devices. This work demonstrated that crystalline OFET devices with insoluble pigment molecules can be fabricated by their soluble precursors. The results indicated that a variety of commercially available conjugated pigments could be potential active materials for high-performance OFETs.

Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface

NASA Astrophysics Data System (ADS)

Park, Jeong-Ho; Kang, Seok-Ju; Park, Jeong-Woo; Lim, Bogyu; Kim, Dong-Yu

2007-11-01

The submicroscaled octadecyltrichlorosilane (OTS) line patterns on gate-dielectric surfaces were introduced into the fabrication of organic field effect transistors (OFETs). These spin-cast regioregular poly(3-hexylthiophene) films on soft-lithographically patterned SiO2 surfaces yielded a higher hole mobility (˜0.072cm2/Vs ) than those of unpatterned (˜0.015cm2/Vs) and untreated (˜5×10-3cm2/Vs) OFETs. The effect of mobility enhancement as a function of the patterned line pitch was investigated in structural and geometric characteristics. The resulting improved mobility is likely attributed to the formation of efficient π-π stacking as a result of guide-assisted, local self-organization-involved molecular interactions between the poly(3-hexylthiophene) polymer and the geometrical OTS patterns.

EDITORIAL: Flexible OLEDs and organic electronics Flexible OLEDs and organic electronics

NASA Astrophysics Data System (ADS)

Kim, Jang-Joo; Han, Min-Koo; Noh, Yong-Young

2011-03-01

Following the great discovery of the electrically conducting polymer, doped polyacetylene, which was honorably recognized in 2000 with the Nobel Prize in chemistry, conjugated molecules, i.e. organic semiconductors, have become an attractive class of active elements for various electronic or opto-electronic applications. Significant effort has been made in both academia and industry to investigate π-conjugated molecules for their unique electrical or opto-electrical properties over the last three decades. The discovery of electroluminescence in conjugated small molecules in 1982 and in polymers in 1989 was a major breakthrough, bringing those molecules to commercial applications within reach for the first time in (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells (OPVs), and field-effect transistors (OFETs). Nowadays, we use OLED displays in everyday life in mobile devices. The potential of these devices, which have been fabricated with conjugated molecules, lies in the possibility to combine the advantages of solution processability, chemical tunability and material strength of polymers with the typical properties of plastics, to realize low-cost, large-area electronic devices on flexible substrates by solution deposition and direct-write graphic art printing techniques. The articles in the flexible OLEDs and organic electronics special issue in Semiconductor Science and Technology deal with a diversity of topics and effectively reflect the current status of research from all over the world on various organic electronic devices, including OLEDs, OPVs, and OFETs. Firstly, S Park et al describe the recent progress in thin-film encapsulation techniques for flexible AM-OLED and large-area OLED lightings, and their applications are discussed by J-W Park et al. Flexible active-matrix OLEDs on plastics require stable and flexible thin-film transistors processed at low temperature. Metal oxide thin-film transistors are proposed as one of the best candidates for the purpose, and J K Jeong discusses their status and perspectives. Next, several excellent research articles on OFETs follow. In particular, Y-Y Noh et al introduce an interesting method to control charge injection in top-gated OFETs by insertion of various self-assembled monolayers in their paper entitled 'Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering'. We would like to thank all the authors for their contributions, which combine new results and profound overviews of the state of the art in flexible OLEDs and organic electronics areas; it is this combination that most often adds to the value of topical issues. Special thanks also go to the staff of IOP Publishing, particularly Ms Alice Malhador, for contributing to the success of this effort. In this special issue, many wonderful reviews and research articles provide a detailed overview of recent progress in OLEDs, OPVs and OFETs as well as a scientific understanding of the device physics with these materials. We sincerely believe this special issue is a timely publication and will give productive information to a broad range of readers. Flexible OLEDs and organic electronics Contents Thin film encapsulation for flexible AM-OLED: a review Jin-Seong Park, Heeyeop Chae, Ho Kyoon Chung and Sang In Lee Large-area OLED lightings and their applications J W Park, D C Shin and S H Park Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering Yong-Young Noh, Xiaoyang Cheng, Marta Tello, Mi-Jung Lee and Henning Sirringhaus Branched polythiophene as a new amorphous semiconducting polymer for an organic field-effect transistor Makoto Karakawa, Yutaka Ie and Yoshio Aso Influence of mechanical strain on the electrical properties of flexible organic thin-film transistors Fang-Chung Chen, Tzung-Da Chen, Bing-Ruei Zeng and Ya-Wei Chung Frequency operation of low-voltage, solution-processed organic field-effect transistors M Caironi, Y-Y Noh and H Sirringhaus Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel Sung-Min Yoon, Shinhyuk Yang, Chun-Won Byun, Soon-Won Jung, Min-Ki Ryu, Sang-Hee Ko Park, ByeongHoon Kim, Himchan Oh, Chi-Sun Hwang and Byoung-Gon Yu The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays Jae Kyeong Jeong Vertical phase segregation of hybrid poly(3-hexylthiophene) and fullerene derivative composites controlled via velocity of solvent drying Tao Song, Zhongwei Wu, Yingfen Tu, Yizheng Jin and Baoquan Sun Variations of cell performance in ITO-free organic solar cells with increasing cell areas Jun-Seok Yeo, Jin-Mun Yun, Seok-Soon Kim, Dong-Yu Kim, Junkyung Kim and Seok-In Na

Ultrasensitive and Selective Organic FET-type Nonenzymatic Dopamine Sensor Based on Platinum Nanoparticles-Decorated Reduced Graphene Oxide.

PubMed

Oh, Jungkyun; Lee, Jun Seop; Jun, Jaemoon; Kim, Sung Gun; Jang, Jyongsik

2017-11-15

Dopamine (DA), a catecholamine hormone, is an important neurotransmitter that controls renal and cardiovascular organizations and regulates physiological activities. Abnormal concentrations of DA cause unfavorable neuronal illnesses such as Parkinson's disease, schizophrenia, and attention deficit hyperactivity disorder/attention deficit disorder. However, the DA concentration is exceedingly low in patients and difficult to detect with existing biosensors. In this study, we developed an organic field-effect-transistor-type (OFET) nonenzyme biosensor using platinum nanoparticle-decorated reduced graphene oxide (Pt_rGO) for ultrasensitive and selective DA detection. The Pt_rGOs were fabricated by reducing GO aqueous solution-containing Pt precursors (PtCl 4 ) with a chemical reducing agent. The Pt_rGOs were immobilized on a graphene substrate by π-π interactions and a conducting-polymer source-drain electrode was patterned on the substrate to form the DA sensor. The resulting OFET sensor showed a high sensitivity to remarkably low DA concentrations (100 × 10 -18 M) and selectivity among interfering molecules. Good stability was expected for the OFET sensor because it was fabricated without an enzymatic receptor, and π-π conjugation is a part of the immobilization process. Furthermore, the OFET sensors are flexible and offer the possibility of wide application as wearable and portable sensors.

Dramatic inversion of charge polarity in diketopyrrolopyrrole-based organic field-effect transistors via a simple nitrile group substitution.

PubMed

Yun, Hui-Jun; Kang, Seok-Ju; Xu, Yong; Kim, Seul Ong; Kim, Yun-Hi; Noh, Yong-Young; Kwon, Soon-Ki

2014-11-19

A record-breaking high electron mobility of 7.0 cm(2) V(-1) s(-1) for n-channel polymer OFETs is reported. By the incorporation of only one nitrile group as an electron-withdrawing function in the vinyl linkage of the DPP-based copolymer, a dramatic inversion of majority charge-carriers from holes to electrons is achieved. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolayer organic field effect phototransistors: photophysical characterization and modeling

NASA Astrophysics Data System (ADS)

Trukhanov, Vasily A.; Anisimov, Daniil S.; Bruevich, Vladimir V.; Agina, Elena V.; Borshchev, Oleg V.; Ponomarenko, Sergei; Zhang, Jiangbin; Bakulin, Artem A.; Paraschuk, Dmitri Yu.

2016-09-01

Organic field-effect transistors (OFET) can combine photodetection and light amplification and, for example, work as phototransistors. Such organic phototransistors can be used in light-controlled switches and amplifiers, detection circuits, and sensors of ultrasensitive images. In this work, we present photophysical characterization of well-defined ultrathin organic field-effect devices with a semiconductive channel based on Langmuir-Blodgett monolayer film. We observe clear generation of photocurrent under illumination with a modulated laser at 405 nm. The increase of photocurrent with the optical modulation frequency indicates the presence of defect states serving as traps for photogenerated carriers and/or the saturation of charge concentration in the thin active layer. We also propose a simple one-dimensional numerical model of a photosensitive OFET. The model is based on the Poisson, current continuity and drift-diffusion equations allows future evaluation of the photocurrent generation mechanism in the studied systems.

Dependence of electrical and time stress in organic field effect transistor with low temperature forming gas treated Al2O3 gate dielectrics.

PubMed

Lee, Sunwoo; Chung, Keum Jee; Park, In-Sung; Ahn, Jinho

2009-12-01

We report the characteristics of the organic field effect transistor (OFET) after electrical and time stress. Aluminum oxide (Al2O3) was used as a gate dielectric layer. The surface of the gate oxide layer was treated with hydrogen (H2) and nitrogen (N2) mixed gas to minimize the dangling bond at the interface layer of gate oxide. According to the two stress parameters of electrical and time stress, threshold voltage shift was observed. In particular, the mobility and subthreshold swing of OFET were significantly decreased due to hole carrier localization and degradation of the channel layer between gate oxide and pentacene by electrical stress. Electrical stress is a more critical factor in the degradation of mobility than time stress caused by H2O and O2 in the air.

Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamura, Naoka, E-mail: NAGAMURA.Naoka@nims.go.jp; Kitada, Yuta; Honma, Itaru

2015-06-22

A chemical potential shift in an organic field effect transistor (OFET) during operation has been revealed by soft X-ray operando nano-spectroscopy analysis performed using a three-dimensional nanoscale electron-spectroscopy chemical analysis system. OFETs were fabricated using ultrathin (3 ML or 12 nm) single-crystalline C10-DNBDT-NW films on SiO{sub 2} (200 nm)/Si substrates with a backgate electrode and top source/drain Au electrodes, and C 1s line profiles under biasing at the backgate and drain electrodes were measured. When applying −30 V to the backgate, there is C 1s core level shift of 0.1 eV; this shift can be attributed to a chemical potential shift correspondingmore » to band bending by the field effect, resulting in p-type doping.« less

Effect of UV/ozone treatment on polystyrene dielectric and its application on organic field-effect transistors

PubMed Central

2014-01-01

The influence of UV/ozone treatment on the property of polystyrene (PS) dielectric surface was investigated, and pentacene organic field-effect transistors (OFETs) based on the treated dielectric was fabricated. The dielectric and pentacene active layers were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. The results showed that, at short UVO exposure time (<10 s), the chemical composition of PS dielectric surface remained the same. While at long UVO exposure time (>60 s), new chemical groups, including alcohol/ether, carbonyl, and carboxyl/ester groups, were formed. By adjusting the UVO exposure time to 5 s, the hole mobility of the OFETs increased to 0.52 cm2/Vs, and the threshold voltage was positively shifted to -12 V. While the time of UVO treatment exceeded 30 s, the mobility started to shrink, and the off-current was enlarged. These results indicate that, as a simple surface treatment method, UVO treatment could quantitatively modulate the property of PS dielectric surface by controlling the exposure time, and thus, pioneered a new way to modulate the characteristics of organic electronic devices. PMID:25258603

Probing organic field effect transistors in situ during operation using SFG.

PubMed

Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

2006-05-24

In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

The influence of isomer purity on trap states and performance of organic thin-film transistors.

PubMed

Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

2017-01-01

Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing

NASA Astrophysics Data System (ADS)

Feng, Linrun; Tang, Wei; Zhao, Jiaqing; Yang, Ruozhang; Hu, Wei; Li, Qiaofeng; Wang, Ruolin; Guo, Xiaojun

2016-02-01

With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 106 at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW.

Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing

PubMed Central

Feng, Linrun; Tang, Wei; Zhao, Jiaqing; Yang, Ruozhang; Hu, Wei; Li, Qiaofeng; Wang, Ruolin; Guo, Xiaojun

2016-01-01

With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 106 at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW. PMID:26861412

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Highly stable organic field-effect transistors with engineered gate dielectrics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kippelen, Bernard; Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Yun, Minseong; Singh, Ankit K.; Dindar, Amir; Choi, Sangmoo; Graham, Samuel

2016-11-01

Organic field-effect transistors (OFETs) have the potential to lead to low-cost flexible displays, wearable electronics, and sensors. While recent efforts have focused greatly on improving the maximum charge mobility that can be achieved in such devices, studies about the stability and reliability of such high performance devices are relatively scarce. In this talk, we will discuss the results of recent studies aimed at improving the stability of OFETs under operation and their shelf lifetime. In particular, we will focus on device architectures where the gate dielectric is engineered to act simultaneously as an environmental barrier layer. In the past, our group had demonstrated solution-processed top-gate OFETs using TIPS-pentacene and PTAA blends as a semiconductor layer with a bilayer gate dielectric layer of CYTOP/Al2O3, where the oxide layer was fabricated by atomic layer deposition, ALD. Such devices displayed high operational stability with little degradation after 20,000 on/off scan cycles or continuous operation (24 h), and high environmental stability when kept in air for more than 2 years, with unchanged carrier mobility. Using this stable device geometry, simple circuits and sensors operating in aqueous conditions were demonstrated. However, the Al2O3 layer was found to degrade due to corrosion under prolonged exposure in aqueous solutions. In this talk, we will report on the use of a nanolaminate (NL) composed of Al2O3 and HfO2 by ALD to replace the Al2O3 single layer in the bilayer gate dielectric use in top-gate OFETs. Such OFETs were found to operate under harsh condition such as immersion in water at 95 °C. This work was funded by the Department of Energy (DOE) through the Bay Area Photovoltaics Consortium (BAPVC) under Award Number DE-EE0004946.

Evaluation of the field-effect carrier mobility in single-grain (and polycrystalline) organic semconductors

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2005-08-01

Mobility in single-grain and polycrystalline organic field-effect transistors (OFETs) is of interest because it affects the performance of these devices. While reasonable values of the hole mobility has been measured in pentacene OFETs, relatively speaking, our understanding of the detailed transport mechanisms is somewhat weak and there is a lack of precise knowledge on the effects of the materials parameters such as the site spacing, the localization length, the rms width of the density of states (DOS), the escape frequency, etc. This work attempts to analyze the materials parameters of pentacene OFETs extracted from data reported in the literature. In this work, we developed a model for the mobility parameter from first principle and extracted the relevant materials parameters. According to our analyses, the transport mechanisms in the OFETs are fairly complex and the electrical properties are dominated by the properties of the trap states. As observed, the single-grain OFETs having smaller values of the rms widths of the DOS (in comparison with the polycrystalline OFETs) also had higher hole mobilities. Our results showed that increasing the gate bias could have a similar but smaller effect. Potentially, increasing the escape frequency is a more effective way to raise the hole mobility and this parameter appears to be affected by changes in the molecular structure and in the degree of "disorder".

Nanoparticle Selective Laser Processing for a Flexible Display Fabrication

NASA Astrophysics Data System (ADS)

Seung Hwan Ko,; Heng Pan,; Daeho Lee,; Costas P. Grigoropoulos,; Hee K. Park,

2010-05-01

To demonstrate a first step for a novel fabrication method of a flexible display, nanomaterial based laser processing schemes to demonstrate organic light emitting diode (OLED) pixel transfer and organic field effect transistor (OFET) fabrication on a polymer substrate without using any conventional vacuum or photolithography processes were developed. The unique properties of nanomaterials allow laser induced forward transfer of organic light emitting material at low laser energy while maintaining good fluorescence and also allow high resolution transistor electrode patterning at plastic compatible low temperature. These novel processes enable an environmentally friendly and cost effective process as well as a low temperature manufacturing sequence to realize inexpensive, large area, flexible electronics on polymer substrates.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

PubMed

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

N-Heterocyclic-Carbene-Treated Gold Surfaces in Pentacene Organic Field-Effect Transistors: Improved Stability and Contact at the Interface.

PubMed

Lv, Aifeng; Freitag, Matthias; Chepiga, Kathryn M; Schäfer, Andreas H; Glorius, Frank; Chi, Lifeng

2018-04-16

N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge-carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene-Au interface was reduced by 85 %. Even after annealing the NHC-Au electrodes at 200 °C for 2 h before pentacene deposition, the charge-carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Acceptor Percolation Determines How Electron-Accepting Additives Modify Transport of Ambipolar Polymer Organic Field-Effect Transistors.

PubMed

Ford, Michael J; Wang, Ming; Bustillo, Karen C; Yuan, Jianyu; Nguyen, Thuc-Quyen; Bazan, Guillermo C

2018-06-18

Organic field-effect transistors (OFETs) that utilize ambipolar polymer semiconductors can benefit from the ability of both electron and hole conduction, which is necessary for complementary circuits. However, simultaneous hole and electron transport in organic field-effect transistors result in poor ON/OFF ratios, limiting potential applications. Solution processing methods have been developed to control charge transport properties and transform ambipolar conduction to hole-only conduction. The electron-acceptor phenyl-C61-butyric acid methyl ester (PC 61 BM), when mixed in solution with an ambipolar semiconducting polymer, can reduce electron conduction. Unipolar p-type OFETs with high, well-defined ON/OFF ratios and without detrimental effects on hole conduction are achieved for a wide range of blend compositions, from 95:5 to 5:95 wt % semiconductor polymer:PC 61 BM. When introducing the alternative acceptor N, N'-bis(1-ethylpropyl)-3,4:9,10-perylenediimide (PDI), high ON/OFF ratios are achieved for 95:5 wt % semiconductor polymer:PDI; however, electron conduction increases for 50:50 and 5:95 wt % semiconductor polymer:PDI. As described within, we show that electron conduction is practically eliminated when additive domains do not percolate across the OFET channel, that is, electrons are "morphologically trapped". Morphologies were characterized by optical, electron, and atomic force microscopy as well as X-ray scattering techniques. PC 61 BM was substituted with an endohedral Lu 3 N fullerene, which enhanced contrast in electron microscopy and allowed for more detailed insight into the blend morphologies. Blends with alternative, nonfullerene acceptors further emphasize the importance of morphology and acceptor percolation, providing insights for such blends that control ambipolar transport and ON/OFF ratios.

Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

NASA Astrophysics Data System (ADS)

Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer.

PubMed

Lee, Junyeong; Hwang, Hyuncheol; Min, Sung-Wook; Shin, Jae Min; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2015-01-28

Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

NASA Astrophysics Data System (ADS)

Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

2017-10-01

Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

Doped bottom-contact organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Shiyi; Billig, Paul; Al-Shadeedi, Akram; Kaphle, Vikash; Lüssem, Björn

2018-07-01

The influence of doping on doped bottom-gate bottom-contact organic field-effect transistors (OFETs) is discussed. It is shown that the inclusion of a doped layer at the dielectric/organic semiconductor layer leads to a significant reduction in the contact resistances and a fine control of the threshold voltage. Through varying the thickness of the doped layer, a linear shift of threshold voltage V T from ‑3.1 to ‑0.22 V is observed for increasing thickness of doped layer. Meanwhile, the contact resistance at the source and drain electrode is reduced from 138.8 MΩ at V GS = ‑10 V for 3 nm to 0.3 MΩ for 7 nm thick doped layers. Furthermore, an increase of charge mobility is observed for increasing thickness of doped layer. Overall, it is shown that doping can minimize injection barriers in bottom-contact OFETs with channel lengths in the micro-meter regime, which has the potential to increase the performance of this technology further.

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

PubMed

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Intrinsic Charge Transport in Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

2005-03-01

Organic field-effect transistors (OFETs) are essential components of modern electronics. Despite the rapid progress of organic electronics, understanding of fundamental aspects of the charge transport in organic devices is still lacking. Recently, the OFETs based on highly ordered organic crystals have been fabricated with innovative techniques that preserve the high quality of single-crystal organic surfaces. This technological progress facilitated the study of transport mechanisms in organic semiconductors [1-4]. It has been demonstrated that the intrinsic polaronic transport, not dominated by disorder, with a remarkably high mobility of ``holes'' μ = 20 cm^2/Vs can be achieved in these devices at room temperature [4]. The signatures of the intrinsic polaronic transport are the anisotropy of the carrier mobility and an increase of μ with cooling. These and other aspects of the charge transport in organic single-crystal FETs will be discussed. Co-authors are Etienne Menard, University of Illinois at Urbana Champaign; Valery Kiryukhin, Rutgers University; John Rogers, University of Illinois at Urbana Champaign; Michael Gershenson, Rutgers University. [1] V. Podzorov et al., Appl. Phys. Lett. 82, 1739 (2003); ibid. 83, 3504 (2003). [2] V. C. Sundar et al., Science 303, 1644 (2004). [3] R. W. I. de Boer et al., Phys. Stat. Sol. (a) 201, 1302 (2004). [4] V. Podzorov et al., Phys. Rev. Lett. 93, 086602 (2004).

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

NASA Astrophysics Data System (ADS)

Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

2018-03-01

The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Fu-Peng; Un, Hio-Ieng; Li, Yongxi

A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.

Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gala, F.; Zollo, G.

2014-06-19

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

NASA Astrophysics Data System (ADS)

Gala, F.; Zollo, G.

2014-06-01

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality

NASA Astrophysics Data System (ADS)

Devynck, M.; Tardy, P.; Wantz, G.; Nicolas, Y.; Hirsch, L.

2011-12-01

The effect of OTS (octadecyltrichlorosilane) Self-Assembled Monolayer (SAM) grafted on SiO2 gate dielectric of pentacene-based OFETs (organic field-effect transistors) is investigated. A significant improvement of the charge mobility (μ), up to 0.74 cm2/V s, is reached thanks to OTS treatment. However, in spite of improved performances, several drawbacks, such as an increase in mobility dispersion, substantial hysteresis in IDS-VG characteristics and high threshold voltages (VT), are observed. Changing solvent and deposition method turns out to have no significant effect on the mobility dispersion. A more accurate approach on the evolution of the mobility and the threshold voltage dispersion with OTS storage time highlights the effect of the OTS solution aging. Even if no difference is evidenced in the surface energy and roughness of the OTS layer, electrical characteristics exhibit considerable deterioration with OTS solution storage time. Using an "aged" OTS solution, opened under air, kept under argon and distilled before use, results in an increase of the IDS-VG hysteresis as well as in VT and in mobility dispersion. In comparison, fresh-OTS-based OFETs present a very low hysteresis, a threshold voltage close to 0 and a much lower mobility dispersion. It is demonstrated that aged OTS solutions contain impurities that are not removed by distillation process, which leads to a less densely packed layer causing interfacial charge traps thus deteriorated performances.

Direct electronic probing of biological complexes formation

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Magliulo, Maria; Manoli, Kyriaki; Giordano, Francesco; Palazzo, Gerardo; Torsi, Luisa

2014-10-01

Functional bio-interlayer organic field - effect transistors (FBI-OFET), embedding streptavidin, avidin and neutravidin as bio-recognition element, have been studied to probe the electronic properties of protein complexes. The threshold voltage control has been achieved modifying the SiO2 gate diaelectric surface by means of the deposition of an interlayer of bio-recognition elements. A threshold voltage shift with respect to the unmodified dielectric surface toward more negative potential values has been found for the three different proteins, in agreement with their isoelectric points. The relative responses in terms of source - drain current, mobility and threshold voltage upon exposure to biotin of the FBI-OFET devices have been compared for the three bio-recognition elements.

Organosilicon derivatives of BTBT for monolayer organic field effect transistors

NASA Astrophysics Data System (ADS)

Agina, Elena V.; Polinskaya, Marina S.; Trul, Askold A.; Chekusova, Viktoria P.; Sizov, Alexey S.; Borshchev, Oleg V.; Ponomarenko, Sergey A.

2017-08-01

Synthesis of novel organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) linked though flexible aliphatic spacers to a disiloxane anchor group is reported. They were successfully used in monolayer OFETs with the charge carrier mobilities up to 0.02 cm2 /Vs, threshold voltage close to 0 V and On/Off ratio up to 10,000. Influence of the chemical structure of the molecules synthesized on the morphology, molecular 2D ordering in the monolayers and their semiconducting properties is considered. The effect of different methods of the ultrathin semiconducting layer preparation, such as Langmuir-Blodgett, Langmuir-Schaefer, spin coating or doctor blade, on the OFET performance is discussed.

Producing smart sensing films by means of organic field effect transistors.

PubMed

Manunza, Ileana; Orgiu, Emanuele; Caboni, Alessandra; Barbaro, Massimo; Bonfiglio, Annalisa

2006-01-01

We have fabricated the first example of totally flexible field effect device for chemical detection based on an organic field effect transistor (OFET) made by pentacene films grown on flexible plastic structures. The ion sensitivity is achieved by employing a thin Mylar foil as gate dielectric. A sensitivity of the device to the pH of the electrolyte solution has been observed A similar structure can be used also for detecting mechanical deformations on flexible surfaces. Thanks to the flexibility of the substrate and the low cost of the employed technology, these devices open the way for the production of flexible chemical and strain gauge sensors that can be employed in a variety of innovative applications such as wearable electronics, e-textiles, new man-machine interfaces.

Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minagawa, M.; Nakai, K.; Baba, A.

2011-12-23

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for devicemore » without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.« less

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

PubMed Central

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-01-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10–2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. PMID:26416434

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors.

PubMed

Matsushima, Toshinori; Sandanayaka, Atula S D; Esaki, Yu; Adachi, Chihaya

2015-09-29

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10(-2) cm(2)/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm(2)/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

NASA Astrophysics Data System (ADS)

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-09-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

NASA Astrophysics Data System (ADS)

Hsu, Yu-Jen

Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by using a UV-Ozone treatment to shift the threshold voltage and increase the current of the transistor under both compressive and tensile strain. An array of strain sensors which maps the strain field on a PVDF film surface is demonstrated in this work. The strain sensor experience inspires a tone analyzer built using distributed resonator architecture on a tensioned piezoelectric PVDF sheet. This sheet is used as both the resonator and detection element. Two architectures are demonstrated; one uses distributed directly addressed elements as a proof of concept, and the other integrates organic thin film transistor-based transimpedance amplifiers monolithically with the PVDF sheet to convert the piezoelectric charge signal into a current signal for future applications such as sound field imaging. The PVDF sheet material is instrumented along its length and the amplitude response at 15 sites is recorded and analyzed as a function of the frequency of excitation. The determination of the dominant frequency component of an incoming sound is demonstrated using linear system decomposition of the time-averaged response of the sheet using no time domain detection. Our design allows for the determination of the spectral composition of a sound using the mechanical signal processing provided by the amplitude response and eliminates the need for time-domain electronic signal processing of the incoming signal. The concepts of the PVDF strain sensor and the tone analyzer trigger the idea of an active matrix microphone through the integration of organic thin film transistors with a freestanding piezoelectric polymer sheet. Localized acoustic pressure detection is enabled by switch transistors and local transimpedance amplification built into the active matrix architecture. The frequency of detection ranges from DC to 15KHz; the bandwidth is extended using an architecture that provides for virtually zero gate/source and gate/drain capacitance at the sensing transistors and low overlap capacitance at the switch transistors. A series of measurements are taken to demonstrate localized acoustic wave detection, high pitch sound diffraction pattern mapping, and directional listening. This system permits the direct visualization of a two dimensional sound field in a format that was previously inaccessible. In addition to the piezoelectric property, pyroelectricity is also exhibited by PVDF and is essential in the world of sensors. An integration of PVDF and OFET for the IR heat sensing is demonstrated to prove the concept of converting pyroelectric charge signal to a electric current signal. The basic pyroelectricity of PVDF sheet is first examined before making a organic transistor integrated IR sensor. Then, two types of architectures are designed and tested. The first one uses the structure similar to the PVDF strain sensor, and the second one uses a PVDF capacitor to gate the integrated OFETs. The conversion from pyroelectric signal to transistor current signal is observed and characterized. This design provides a flexible and gain-tunable version for IR heat sensors.

Liquid crystals for organic transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors.

PubMed

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-04-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10 -2 cm 2 V -1 s -1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

PubMed Central

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-01-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. PMID:27877383

Thiophene-Based Organic Semiconductors.

PubMed

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

DOE PAGES

Wu, Fu-Peng; Un, Hio-Ieng; Li, Yongxi; ...

2017-10-09

For this study a new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta-4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) (-6.24 eV) and the lowest unoccupied molecular orbit (LUMO) (-2.57 eV) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm 2 V -1 s -1, which indicates that the BBI is a promising n-type building block for optoelectronics.

An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Fu-Peng; Un, Hio-Ieng; Li, Yongxi

For this study a new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta-4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) (-6.24 eV) and the lowest unoccupied molecular orbit (LUMO) (-2.57 eV) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm 2 V -1 s -1, which indicates that the BBI is a promising n-type building block for optoelectronics.

Ultrathin solution-processed single crystals of thiophene-phenylene co-oligomers for organic field-effect devices

NASA Astrophysics Data System (ADS)

Glushkova, Anastasia V.; Poimanova, Elena Yu.; Bruevich, Vladimir V.; Luponosov, Yuriy N.; Ponomarenko, Sergei A.; Paraschuk, Dmitry Yu.

2017-08-01

Thiophene-phenylene co-oligomers (TPCO) single crystals are promising materials for organic light-emitting devices, e.g., light-emitting transistors (OLETs), due to their ability to combine high luminescence and efficient charge transport. However, optical confinement in platy single crystals strongly decreases light emission from their top surface degrading the device performance. To avoid optical waveguiding, single crystals thinner than 100 nm would be beneficial. Herein, we report on solution-processed ultrathin single crystals of TPCO and study their charge transport properties. As materials we used 1,4-bis(5'-hexyl-2,2'-bithiophene-5-yl)benzene (DH-TTPTT) and 1,4-bis(5'-decyl-2,2'-bithiophene-5-yl)benzene (DD-TTPTT). The ultrathin single crystals were studied by optical polarization, atomic-force, and transmission electron microscopies, and as active layers in organic field effect transistors (OFET). The OFET hole mobility was increased tenfold for the oligomer with longer alkyl substituents (DD-TTPTT) reaching 0.2 cm2/Vs. Our studies of crystal growth indicate that if the substrate is wetted, it has no significant effect on the crystal growth. We conclude that solution-processed ultrathin TPCO single crystals are a promising platform for organic optoelectronic field-effect devices.

Reducing the contact resistance in bottom-contact-type organic field-effect transitors using an AgO x interface layer

NASA Astrophysics Data System (ADS)

Minagawa, Masahiro; Kim, Yeongin; Claus, Martin; Bao, Zhenan

2017-09-01

Bottom-contact organic field-effect transistors (OFETs) are prepared by inserting an AgO x layer between a pentacene layer and the source-drain electrodes. The contact resistance in the device is ˜8.1 kΩ·cm with an AgO x layer oxidized for 60 s but reaches 116.9 kΩ·cm with a non-oxidized Ag electrode. The drain current and mobility in the OFETs with the AgO x layer increase with the oxidization time and then gradually plateau, and this trend strongly depends on the work function of the Ag surface. Further, the hole injection is enhanced by the presence of Ag2O but inhibited by the presence of AgO.

Decoding the Vertical Phase Separation and Its Impact on C8-BTBT/PS Transistor Properties.

PubMed

Pérez-Rodríguez, Ana; Temiño, Inés; Ocal, Carmen; Mas-Torrent, Marta; Barrena, Esther

2018-02-28

Disentangling the details of the vertical distribution of small semiconductor molecules blended with polystyrene (PS) and the contact properties are issues of fundamental value for designing strategies to optimize small-molecule:polymer blend organic transistors. These questions are addressed here for ultrathin blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and PS processed by a solution-shearing technique using three different blend composition ratios. We show that friction force microscopy (FFM) allows the determination of the lateral and vertical distribution of the two materials at the nanoscale. Our results demonstrate a three-layer stratification of the blend: a film of C8-BTBT of few molecular layers with crystalline order sandwiched between a PS-rich layer at the bottom (a few nm thick) acting as a passivating dielectric layer and a PS-rich skin layer on the top (∼1 nm) conferring stability to the devices. Kelvin probe force microscopy (KPFM) measurements performed in operating organic field-effect transistors (OFETs) reveal that the devices are strongly contact-limited and suggest contact doping as a route for device optimization. By excluding the effect of the contacts, field-effect mobility values in the channel as high as 10 cm 2 V -1 s -1 are obtained. Our findings, obtained via a combination of FFM and KPFM, provide a satisfactory explanation of the different electrical performances of the OFETs as a function of the blend composition ratio and by doping the contacts.

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

Naphthobischalcogenadiazole Conjugated Polymers: Emerging Materials for Organic Electronics.

PubMed

Osaka, Itaru; Takimiya, Kazuo

2017-07-01

π-Conjugated polymers are an important class of materials for organic electronics. In the past decade, numerous polymers with donor-acceptor molecular structures have been developed and used as the active materials for organic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The choice of the building unit is the primary step for designing the polymers. Benzochalcogenadiazoles (BXzs) are one of the most familiar acceptor building units studied in this area. As their doubly fused system, naphthobischalcogenadiazoles (NXzs), i.e., naphthobisthiadiazole (NTz), naphthobisoxadiazole (NOz), and naphthobisselenadiazole (NSz) are emerging building units that provide interesting electronic properties and highly self-assembling nature for π-conjugated polymers. With these fruitful features, π-conjugated polymers based on these building units demonstrate great performances in OFETs and OPVs. In particular, in OPVs, NTz-based polymers have exhibited more than 10% efficiency, which is among the highest values reported so far. In this Progress Report, the synthesis, properties, and structures of NXzs and their polymers is summarized. The device performance is also highlighted and the structure-property relationships of the polymers are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sci-Sat AM: Radiation Dosimetry and Practical Therapy Solutions - 01: Optimization of an organic field effect transistor for radiation dosimetry measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, Alasdair

2016-08-15

Purpose: To use Monte Carlo simulations to optimize the design of an organic field effect transistor (OFET) to maximize water-equivalence across the diagnostic and therapeutic photon energy ranges. Methods: DOSXYZnrc was used to simulate transport of mono-energetic photon beams through OFETs. Dose was scored in the dielectric region of devices and used for evaluating the response of the device relative to water. Two designs were considered: 1. a bottom-gate device on a substrate of polyethylene terephthalate (PET) with an aluminum gate, a dielectric layer of either PMMA or CYTOP (a fluorocarbon) and an organic semiconductor (pentacene). 2. a symmetric bilayermore » design was employed in which two polymer layers (PET and CYTOP) were deposited both below the gate and above the semiconductor to improve water-equivalence and reduce directional dependence. The relative thickness of the layers was optimized to maximize water-equivalence. Results: Without the bilayer, water-equivalence was diminished relative to OFETs with the symmetric bilayer at low photon energies (below 80 keV). The bilayer’s composition was designed to have one layer with an effective atomic number larger than that of water and the other with an effective atomic number lower than that of water. For the particular materials used in this study, a PET layer 0.1mm thick coupled with a CYTOP layer of 900 nm provided a device with a water-equivalence within 3% between 20 keV and 5 MeV. Conclusions: organic electronic devices hold tremendous potential as water-equivalent dosimeters that could be used in a wide range of applications without recalibration.« less

Solution-Processable Low-Molecular Weight Extended Arylacetylenes: Versatile p-Type Semiconductors for Field-Effect Transistors and Bulk Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silvestri, Fabio; Marrocchi, Assunta; Seri, Mirko

2010-04-08

We report the synthesis and characterization of a series of five extended arylacetylenes, 9,10-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-anthracene (A-P6t, 1), 9,10-bis-[(p-{[m,p-bis(hexyloxy) phenyl]ethynyl}phenyl)ethynyl]-anthracene (PA-P6t, 2), 4,7-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazole (BTZ-P6t, 5), 4,7-bis(5-{[m,p-bis(hexyloxy)phenyl]ethynyl}thien-2-yl)-2,1,3-benzothiadiazole (TBTZ-P6t, 6), and 7,7'-({[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazol-4,4'-ethynyl)-2,5-thiophene (BTZT-P6t, 7), and two arylvinylenes, 9,10-bis-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}-anthracene (A-P6d, 3), 9,10-bis-[(E)-(p-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}phenyl)vinyl]-anthracene (PA-P6d, 4). Trends in optical absorption spectra and electrochemical redox processes are first described. Next, the thin-film microstructures and morphologies of films deposited from solution under various conditions are investigated, and organic field-effect transistors (OFETs) and bulk heterojunction photovoltaic (OPV) cells fabricated. We find that substituting acetylenic for olefinic linkers on the molecular cores significantly enhances device performance. OFET measurements reveal that allmore » seven of the semiconductors are FET-active and, depending on the backbone architecture, the arylacetylenes exhibit good p-type mobilities (μ up to ~0.1 cm 2 V -1 s -1) when optimum film microstructural order is achieved. OPV cells using [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) as the electron acceptor exhibit power conversion efficiencies (PCEs) up to 1.3% under a simulated AM 1.5 solar irradiation of 100 mW/cm 2. These results demonstrate that arylacetylenes are promising hole-transport materials for p-channel OFETs and promising donors for organic solar cells applications. A direct correlation between OFET arylacetylene hole mobility and OPV performance is identified and analyzed.« less

Air-stable n-type semiconductor: core-perfluoroalkylated perylene bisimides.

PubMed

Li, Yan; Tan, Lin; Wang, Zhaohui; Qian, Hualei; Shi, Yubai; Hu, Wenping

2008-02-21

A series of core-perfluoroalkylated perylene bisimides (PBIs) have been efficiently synthesized by copper-mediated perfluoroalkylation of dibrominated PBIs. Their aromatic cores are highly twisted due to the steric encumbrance in the bay regions as revealed by single-crystal X-ray analysis. The organic field-effect transistors (OFETs) incorporating these new n-type semiconductors show remarkable air-stability and good field effect mobility.

Polymeric and Molecular Materials for Advanced Organic Electronics

DTIC Science & Technology

2011-07-25

printable variants. All have excellent dielectric and insulating properties, a remarkable ability to minimize trapped charge between thin film transistor... trapped charge density, and hence the corresponding OTFT device performance. Under this program we first discovered that OTFT performance is...deep, high- density charge traps must be overcome for efficient FET operation, it has been postulated that in most OFETs, shallow lower-density (~10

Thiazoloisoindigo: a Building Block that Merges the Merits of Thienoisoindigo and Diazaisoindigo for Conjugated Polymers.

PubMed

Wan, Xiaobo; Li, Chenchen; Wang, Xiao; Hio-Ieng, Un; Peng, Jiawei; Lan, Zhenggang; Cai, Mian; Pei, Jian; Wang, Jieyu

2018-04-24

Thiazoloisoindigo, a novel structural variation of isoindigo, is for the first time utilized to synthesize conjugated polymers. Polymer based on thiazoloisoindigo merges the advantages of the one based on thienoisoindigo and diazaisoindigo: It not only exhibits a greatly red shifted UV-vis absorption to the near-infrared region due to its strong tendency to form quinoidal structures, similar to that based on thienoisoindigo, but also shows excellent ambipolar mobility (hole 3.93 and electron 1.07 cm2 V-1 s-1, respectively) in organic field-effect transistors (OFETs), superior than that based on diazaisoindigo, showing the strong electron-withdrawing capability of thiazoloisoindigo. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical characterization of organic thin film transistors and alternative device architectures

NASA Astrophysics Data System (ADS)

Newman, Christopher R.

In the last 10--15 years, organic semiconductors have evolved from experimental curiosities into viable alternatives for practical applications involving large-area and low-cost electronics such as display backplanes, electronic paper, radio frequency identification (RFID) tags, and solar cells. Many of the initially-stated goals in this field have been achieved; organic semconductors have demonstrated performance comparable to or greater than amorphous silicon (a-Si), the entrenched technology for most of the applications listed above. At present, the major obstacles remaining to commercialization of devices based on organic semiconductors involve material stability, processing considerations and optimization of the other device components (e.g. metal contacts and dielectric materials). Despite these technical achievements, significant gaps remain in our understanding of the underlying transport physics in these devices. This thesis summarizes experiments performed on organic field-effect transistors (OFETs) in an attempt to address some of these knowledge gaps. The FET, in addition to being a very useful device for practical applications (such as the driving elements in pixel backplanes), is also a very flexible architecture from an experimental standpoint. The presence of a capacitively-coupled gate electrode allows the investigation of transport physics as a function of carrier concentration. For devices in which non-idealities (i.e. carrier traps) largely dictate the observed characteristics, this is a very useful feature. Although practical OFETs are fabricated as conventional single-gate structures on an organic thin film (OTFTs), more exotic structures can often provide insights that standard OTFTs cannot. Specifically, single-crystal OFETs allow the investigation of carrier transport in the absence of grain boundaries, and double-gated OTFTs facilitate the investigation and comparison of properties across two discrete interfaces. One of the remaining challenges in terms of achieving stability inorganic semiconductors involves understanding, and hopefully minimizing, the bias stress effect of operating OTFTs. Largely ignored during the years in which research groups sought to optimize the standard device metrics of field-effect mobility, current on/off ratio, and threshold voltage, operational stability is emerging as a dominant consideration in these materials. Experiments performed with the goal of quantifying and understanding the bias-stress effect in organic semiconductors are described at the end of this thesis.

Molecular Photovoltaics in Nanoscale Dimension

PubMed Central

Burtman, Vladimir; Zelichonok, Alexander; Pakoulev, Andrei V.

2011-01-01

This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method. The dynamics of charge transport are determined and used to clarify a transport mechanism. The 1,4,5,8-naphthalene-tetracarboxylic diphenylimide (NTCDI) SAM devices provide a useful tool to study the fundamentals of polaronic transport at organic surfaces and to discuss the performance of organic photovoltaic devices in nanoscale. Time-resolved photovoltaic studies allow us to separate the charge annihilation kinetics in the conductive NTCDI channel from the overall charge kinetic in a SAM-OFET device. It has been demonstrated that tuning of the type of conductivity in NTCDI SAM-OFET devices is possible by changing Si substrate doping. Our study of the polaron charge transfer in organic materials proposes that a cation-radical exchange (redox) mechanism is the major transport mechanism in the studied SAM-PVC devices. The role and contribution of the transport through delocalized states of redox active surface molecular aggregates of NTCDI are exposed and investigated. This example of technological development is used to highlight the significance of future technological development of nanotechnologies and to appreciate a structure-property paradigm in organic nanostructures. PMID:21339983

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Cu(ii)-catalyzed sulfide construction: both aryl groups utilization of intermolecular and intramolecular diaryliodonium salt.

PubMed

Wang, Ming; Wei, Jianpeng; Fan, Qiaoling; Jiang, Xuefeng

2017-03-07

A sulfur-iodine exchange protocol of diaryliodonium salts with inorganic sulfur salt was developed. Both aryl groups in the diaryliodonium salt were fully exerted in this transformation. Five- to eight-membered sulfur-containing heterocycles were achieved. Note that [1]benzothieno-[3,2-b][1]benzothiophene (BTBT) (an organic field-effect transistor (OFET) material) and Zaltoprofen were efficiently established through this method.

High Mobility Conjugated Polymers

DTIC Science & Technology

2007-10-20

will act as a trap for opposite charge carriers; the electron affinities were 4.0 eV (BBL) and 2.7 eV (PTHQx) and ionization potentials were 6.0 eV...transistors (OFETs), photovoltaic cells, and photodetectors, is limited primarily by the low charge carrier mobilities of current materials. To address this...showing a maximum mobility with hexyl. Fundamental insights into the structural factors that govern high mobility charge transport and recombination in

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors.

PubMed

Jang, Mi; Park, Ji Hoon; Im, Seongil; Kim, Se Hyun; Yang, Hoichang

2014-01-15

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

PubMed

Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

2018-03-01

Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) Films.

PubMed

Chai, Zhimin; Abbasi, Salman A; Busnaina, Ahmed A

2018-05-30

Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material and energy consumption, low cost, and scalability. Here, we show scalable and controllable directed assembly of highly crystalline 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) films via a dip-coating process. Self-aligned stripe patterns with tunable thickness and morphology over a centimeter scale are obtained by adjusting two governing parameters: the pulling speed of a substrate and the solution concentration. OFETs are fabricated using the C8-BTBT films assembled at various conditions. A field-effect hole mobility up to 3.99 cm 2 V -1 s -1 is obtained. Owing to the highly scalable crystalline film formation, the dip-coating directed assembly process could be a great candidate for manufacturing next-generation electronics. Meanwhile, the film formation mechanism discussed in this paper could provide a general guideline to prepare other organic semiconducting films from small molecule solutions.

Self-assembled electrical materials from contorted aromatics

NASA Astrophysics Data System (ADS)

Xiao, Shengxiong

This thesis describes the design, synthesis, self-assembly and electrical properties of new types of contorted polycyclic aromatic hydrocarbons. These topologically interesting contorted aromatics show promising transistor characteristics as new building blocks for organic field-effect transistors (OFETs) at different length scales. In chapter 2, a class of pentacenes that are substituted along their long edges with aromatic rings were synthesized. Their solid-state assemblies were studied by X-ray crystallography. Their performance as thin film transistors (TFTs) and single crystal field effect transistors (SCFETs) were systematically evaluated. A structure-property relationship between these highly phenylated pentacenes was found. Chapter 3 explores the new concept of whether a non-planar aromatic core could yield efficacious electronic materials, as the ultimate success in the organic electronics will require a holistic approach to creating new building blocks. Synthesis, functionalization and assembly of a new type of contorted hexabenzocoronene (HBC) whose aromatic core is heavily distorted away from planarity due to the steric congestion around its proximal carbons were discussed. Structural studies by X-ray crystallography showed that these HBC molecules stack into columnar structures in the solid state, which are ideal for conduction. Chapter 4 describes that microscale liquid crystalline thin film OFETs of tetradodecyloxy HBC showed the best transistor properties of all discotic columnar materials. Chapter 5 details the fabrication and characterization of nanoscale single crystalline fiber OFETs of octadodecyloxyl HBC. In Chapter 6 we show that a molecular scale monolayer of HBC acid chlorides could be self-assembled on SiO2 insulating layer and could be organized laterally between the ends of 2 nm carbon nanotube gaps to form high quality FETs that act as environmental and chemical sensors. Chapter 7 details the enforced one-dimensional photoconductivity studies of core-cladding HBCs in thin films. Physical properties, such as charge generation, separation/recombination, and transport in HBCs liquid crystalline thin films were discussed. Chapter 8 describes the synthesis and electrical properties of the second generation of contorted aromatics octabenzocircumbiphenyl (OBC). The significant finding about OBCs is that they can be reversibly protonated with Bronsted acids. The significance of those results is that the conductance of the semiconductive thin film could be controlled and attenuated by doping with acid, which can lead to switchable electronics. Chapter 9 presents our studies of extending the HBC synthetic strategies to the formation of other curved aromatics using "wet chemistry". First a series of nonplanar polycyclic aromatic hydrocarbons was made starting from the olefination of pentacenequinone. Then we utilize chemical reactivity, X-ray crystallography, and DFT calculations to explore three types of olefins of increasing structural complexity. Chapter 10 discusses the transformation of HBCs into bowl-shaped molecules on ruthenium metal surfaces. Surface chemistry studies using scanning tunneling microscopy (STM), reflectance absorbance infrared spectroscopy (RAIRS), and temperature-programmed desorption (TPD) characterization methods, referred to as "dry chemistry", showed the formation of an aromatic hemisphere, which is the end cap of a (6,6) arm-chair single-walled carbon nanotube.

An ultra-lightweight design for imperceptible plastic electronics.

PubMed

Kaltenbrunner, Martin; Sekitani, Tsuyoshi; Reeder, Jonathan; Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Drack, Michael; Schwödiauer, Reinhard; Graz, Ingrid; Bauer-Gogonea, Simona; Bauer, Siegfried; Someya, Takao

2013-07-25

Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies. Rollable and unbreakable backplanes with amorphous silicon field-effect transistors on steel substrates only 3 μm thick have been demonstrated. On polymer substrates, bending radii of 0.1 mm have been achieved in flexible electronic devices. Concurrently, the need for compliant electronics that can not only be flexed but also conform to three-dimensional shapes has emerged. Approaches include the transfer of ultrathin polyimide layers encapsulating silicon CMOS circuits onto pre-stretched elastomers, the use of conductive elastomers integrated with organic field-effect transistors (OFETs) on polyimide islands, and fabrication of OFETs and gold interconnects on elastic substrates to realize pressure, temperature and optical sensors. Here we present a platform that makes electronics both virtually unbreakable and imperceptible. Fabricated directly on ultrathin (1 μm) polymer foils, our electronic circuits are light (3 g m(-2)) and ultraflexible and conform to their ambient, dynamic environment. Organic transistors with an ultra-dense oxide gate dielectric a few nanometres thick formed at room temperature enable sophisticated large-area electronic foils with unprecedented mechanical and environmental stability: they withstand repeated bending to radii of 5 μm and less, can be crumpled like paper, accommodate stretching up to 230% on prestrained elastomers, and can be operated at high temperatures and in aqueous environments. Because manufacturing costs of organic electronics are potentially low, imperceptible electronic foils may be as common in the future as plastic wrap is today. Applications include matrix-addressed tactile sensor foils for health care and monitoring, thin-film heaters, temperature and infrared sensors, displays, and organic solar cells.

Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide

NASA Astrophysics Data System (ADS)

Scheinert, Susanne; Pernstich, Kurt P.; Batlogg, Bertram; Paasch, Gernot

2007-11-01

It has been demonstrated [K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 96, 6431 (2004)] that a controllable shift of the threshold voltage in pentacene thin film transistors is caused by the use of organosilanes with different functional groups forming a self-assembled monolayer (SAM) on the gate oxide. The observed broadening of the subthreshold region indicates that the SAM creates additional trap states. Indeed, it is well known that traps strongly influence the behavior of organic field-effect transistors (OFETs). Therefore, the so-called "amorphous silicon (a-Si) model" has been suggested to be an appropriate model to describe OFETs. The main specifics of this model are transport of carriers above a mobility edge obeying Boltzmann statistics and exponentially distributed tail states and deep trap states. Here, approximate trap distributions are determined by adjusting two-dimensional numerical simulations to the experimental data. It follows from a systematic variation of parameters describing the trap distributions that the existence of both donorlike and acceptorlike trap distributions near the valence band, respectively, and a fixed negative interface charge have to be assumed. For two typical devices with different organosilanes the electrical characteristics can be described well with a donorlike bulk trap distribution, an acceptorlike interface distribution, and/or a fixed negative interface charge. As expected, the density of the fixed or trapped interface charge depends strongly on the surface treatment of the dielectric. There are some limitations in determining the trap distributions caused by either slow time-dependent processes resulting in differences between transfer and output characteristics, or in the uncertainty of the effective mobility.

Electrical Characteristics of Organic Field Effect Transistor Formed by Gas Treatment of High-k Al2O3 at Low Temperature

NASA Astrophysics Data System (ADS)

Lee, Sunwoo; Yoon, Seungki; Park, In-Sung; Ahn, Jinho

2009-04-01

We studied the electrical characteristics of an organic field effect transistor (OFET) formed by the hydrogen (H2) and nitrogen (N2) mixed gas treatment of a gate dielectric layer. We also investigated how device mobility is related to the length and width variations of the channel. Aluminum oxide (Al2O3) was used as the gate dielectric layer. After the treatment, the mobility and subthreshold swing were observed to be significantly improved by the decreased hole carrier localization at the interfacial layer between the gate oxide and pentacene channel layers. H2 gas plays an important role in removing the defects of the gate oxide layer at temperatures below 100 °C.

Molecular Self-Assembly and Interfacial Engineering for Highly Efficient Organic Field Effect Transistors and Solar Cells

DTIC Science & Technology

2012-09-23

balance between disordered SAMs to promote large pentacene grains and thick SAMs to aid in physically buffering the charge carriers in pentacene from...to 0.76 µF/cm2), and enhanced pentacene OFET device performance such as higher charge carrier mobility, current on/off ratio, and lower threshold...surface charge trap • Tuning of surface energy • Control of surface group orientation SAM/MO ultrathin dielectric: • Low-voltage operation

2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V(-1) s(-1).

PubMed

Takimiya, Kazuo; Ebata, Hideaki; Sakamoto, Katsuhiro; Izawa, Takafumi; Otsubo, Tetsuo; Kunugi, Yoshihito

2006-10-04

Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.

Electronic functions of solid-to-liquid interfaces of organic semiconductor crystals and ionic liquid

NASA Astrophysics Data System (ADS)

Takeya, J.

2008-10-01

The environment of surface electrons at 'solid-to-liquid' interfaces is somewhat extreme, subjected to intense local electric fields or harsh chemical pressures that high-density ionic charge or polarization of mobile molecules create. In this proceedings, we argue functions of electronic carriers generated at the surface of organic semiconductor crystals in response to the local electric fields in the very vicinity of the interface to ionic liquid. The ionic liquids (ILs), or room temperature molten salts, are gaining considerable interest in the recent decade at the prospect of nonvolatile 'green solvents', with the development of chemically stable and nontoxic compounds. Moreover, such materials are also applied to electrolytes for lithium ion batteries and electric double-layer (EDL) capacitors. Our present solid-to-liquid interfaces of rubrene single crystals and ionic liquids work as fast-switching organic field-effect transistors (OFETs) with the highest transconductance, i.e. the most efficient response of the output current to the input voltage, among the OFETs ever built.

Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-04-01

Effects of illumination on the carrier injection and transport due to photogenerated carriers were investigated in pentacene organic field-effect transistor (OFET). A plasmonic nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene FET to act to enhance the photo-carrier generation. The influence of nanoparticles (NPs) on the photogeneration as well as on the charge trapping has been investigated using the current-voltage (I-V) and impedance spectroscopy (IS) measurements. The I-V results proved higher amount of photogenerated charge in presence of NPs even though this device has the contact resistance about two orders higher and effective mobility an order lower than the reference device without plasmonic NPs. The IS analysis of relaxation times verified strong influence of NPs on the charge trapping.

Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

NASA Astrophysics Data System (ADS)

Sworakowski, Juliusz

2015-07-01

The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

Photo-reactive charge trapping memory based on lanthanide complex.

PubMed

Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V A L

2015-10-09

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Photo-reactive charge trapping memory based on lanthanide complex

NASA Astrophysics Data System (ADS)

Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

2015-10-01

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Charge transport properties of carbazole dendrimers in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Mutkins, Karyn; Chen, Simon S. Y.; Aljada, Muhsen; Powell, Ben J.; Olsen, Seth; Burn, Paul L.; Meredith, Paul

2011-10-01

We report three generations of p-type dendrimer semiconductors comprised of spirobifluorene cores, carbazole branching units and fluorene surface groups for use in organic field-effect transistors (OFETs). The group of dendrimers are defined by their generation and noted as SBF-(Gx)2, where x is the generation. Top contact-bottom gate OFETs were fabricated by spin-coating the dendrimers onto an n-octyltrichlorosilane (OTS) passivated silicon dioxide surface. The dendrimer films were found to be amorphous. The highest mobility was measured for the first generation dendrimer (SBF-(G1)2), which had an average mobility of (6.6 +/- 0.2) × 10-5 cm2/V s and an ON/OFF ratio of 3.0 × 104. As the generation of the dendrimer was increased there was only a slight decrease in the measured mobility in spite of the significantly different molecular sizes of the dendrimers. The mobility of SBF-(G3)2, which had a hydrodynamic radius almost twice of SBF-(G1)2, still had an average mobility of (4.7 +/- 0.6) × 10-5 cm2/V s and an ON/OFF ratio of 2.7 × 103. Density functional theory calculations showed that the highest occupied molecular orbital was distributed over the core and carbazole units meaning that both intra- and intermolecular charge transfer could occur enabling the hole mobility to remain essentially constant even though the dendrimers would pack differently in the solid-state.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Buta-1,3-diyne-Based π-Conjugated Polymers for Organic Transistors and Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eckstein, Brian J.; Melkonyan, Ferdinand S.; Zhou, Nanjia

We report the synthesis and characterization of new alkyl-substituted 1,4-di(thiophen-2-yl)buta-1,3-diyne (R-DTB) donor building blocks, based on the -C≡C-C≡C- conjugative pathway, and their incorporation with thienyl-diketopyrrolopyrrole (R'-TDPP) acceptor units into π-conjugated PTDPP-DTB polymers (P1-P4). The solubility of the new polymers strongly depends on the DTB and DPP solubilizing (R and R', respectively) substituents. Thus, solution processable and high molecular weight PDPP-DTB polymers are achieved for P3 (R = n-C12H25, R' = 2- butyloctyl) and P4 (R = 2-ethylhexyl, R' = 2-butyloctyl). Systematic studies of P3 and P4 physicochemical properties are carried using optical spectroscopy, cyclic voltammetry, and thermal analysis, revealing characteristicmore » features of the dialkynyl motif. For the first time, optoelectronic devices (OFETs, OPVs) are fabricated with 1,3-butadiyne containing organic semiconductors. OFET hole mobilities and record OPV power conversion efficiencies for acetylenic organic materials approach 0.1 cm2/(V s) and 4%, respectively, which can be understood from detailed thin-film morphology and microstructural characterization using AFM, TEM, XRD, and GIWAXS methodologies. Importantly, DTB-based polymers (P3 and P4) exhibit, in addition to stabilization of frontier molecular orbitals and to -C≡C-C≡C- relief of steric torsions, discrete morphological pliability through thermal annealing and processing additives. The advantageous materials properties and preliminary device performance reported here demonstrate the promise of 1,3-butadiyne-based semiconducting polymers.« less

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

PubMed

Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng

2018-05-30

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10 4 s between these two states with an on/off ratio of 10 4 , and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

Bio-Organic Optoelectronic Devices Using DNA

NASA Astrophysics Data System (ADS)

Singh, Thokchom Birendra; Sariciftci, Niyazi Serdar; Grote, James G.

Biomolecular DNA, as a marine waste product from salmon processing, has been exploited as biodegradable polymeric material for photonics and electronics. For preparing high optical quality thin films of DNA, a method using DNA with cationic surfactants such as DNA-cetyltrimethylammonium, CTMA has been applied. This process enhances solubility and processing for thin film fabrication. These DNA-CTMA complexes resulted in the formation of self-assembled supramolecular films. Additionally, the molecular weight can be tailored to suit the application through sonication. It revealed that DNA-CTMA complexes were thermostable up to 230 ∘ C. UV-VIS absorption shows that these thin films have high transparency from 350 to about 1,700 nm. Due to its nature of large band gap and large dielectric constant, thin films of DNA-CTMA has been successfully used in multiple applications such as organic light emitting diodes (OLED), a cladding and host material in nonlinear optical devices, and organic field-effect transistors (OFET). Using this DNA based biopolymers as a gate dielectric layer, OFET devices were fabricated that exhibits current-voltage characteristics with low voltages as compared with using other polymer-based dielectrics. Using a thin film of DNA-CTMA based biopolymer as the gate insulator and pentacene as the organic semiconductor, we have demonstrated a bio-organic FET or BioFET in which the current was modulated over three orders of magnitude using gate voltages less than 10 V. Given the possibility to functionalise the DNA film customised for specific purposes viz. biosensing, DNA-CTMA with its unique structural, optical and electronic properties results in many applications that are extremely interesting.

Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer.

PubMed

Baeg, Kang-Jun; Bae, Gwang-Tae; Noh, Yong-Young

2013-06-26

Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

High performance organic transistor active-matrix driver developed on paper substrate

NASA Astrophysics Data System (ADS)

Peng, Boyu; Ren, Xiaochen; Wang, Zongrong; Wang, Xinyu; Roberts, Robert C.; Chan, Paddy K. L.

2014-09-01

The fabrication of electronic circuits on unconventional substrates largely broadens their application areas. For example, green electronics achieved through utilization of biodegradable or recyclable substrates, can mitigate the solid waste problems that arise at the end of their lifespan. Here, we combine screen-printing, high precision laser drilling and thermal evaporation, to fabricate organic field effect transistor (OFET) active-matrix (AM) arrays onto standard printer paper. The devices show a mobility and on/off ratio as high as 0.56 cm2V-1s-1 and 109 respectively. Small electrode overlap gives rise to a cut-off frequency of 39 kHz, which supports that our AM array is suitable for novel practical applications. We demonstrate an 8 × 8 AM light emitting diode (LED) driver with programmable scanning and information display functions. The AM array structure has excellent potential for scaling up.

High performance organic transistor active-matrix driver developed on paper substrate

PubMed Central

Peng, Boyu; Ren, Xiaochen; Wang, Zongrong; Wang, Xinyu; Roberts, Robert C.; Chan, Paddy K. L.

2014-01-01

The fabrication of electronic circuits on unconventional substrates largely broadens their application areas. For example, green electronics achieved through utilization of biodegradable or recyclable substrates, can mitigate the solid waste problems that arise at the end of their lifespan. Here, we combine screen-printing, high precision laser drilling and thermal evaporation, to fabricate organic field effect transistor (OFET) active-matrix (AM) arrays onto standard printer paper. The devices show a mobility and on/off ratio as high as 0.56 cm2V−1s−1 and 109 respectively. Small electrode overlap gives rise to a cut-off frequency of 39 kHz, which supports that our AM array is suitable for novel practical applications. We demonstrate an 8 × 8 AM light emitting diode (LED) driver with programmable scanning and information display functions. The AM array structure has excellent potential for scaling up. PMID:25234244

Synthesis, characterization and air stable semiconductor properties of thiophene-condensed pyrene derivatives

NASA Astrophysics Data System (ADS)

Moriguchi, Tetsuji; Higashi, Makoto; Yakeya, Daisuke; Jalli, Venkataprasad; Tsuge, Akihiko; Okauchi, Tatsuo; Nagamatsu, Shuichi; Takashima, Wataru

2017-01-01

New and simple polyaromatic compounds containing two thiophene rings were prepared via photo-cyclization and their structural and photophysical properties were evaluated via 1H NMR spectroscopy and X-ray crystallographic analysis. On the basis of X-ray analysis, it was determined that the molecular structure of the compound was highly strained and that they contain two hetero [4] helicene moieties. The compounds were investigated as active layer in p-type organic field-effect transistors (p-OFET) in top contact type devices. Notably, the compound containing two thiophene components exhibited very stable p-type semiconducting behavior in moist air.

Consecutive thiophene-annulation approach to π-extended thienoacene-based organic semiconductors with [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure.

PubMed

Mori, Takamichi; Nishimura, Takeshi; Yamamoto, Tatsuya; Doi, Iori; Miyazaki, Eigo; Osaka, Itaru; Takimiya, Kazuo

2013-09-18

We describe a new synthetic route to the [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b]anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and bis[1]benzothieno[2,3-d:2',3'-d']naphtho[2,3-b:6,7-b']dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm(2) V(-1) s(-1)) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.

Demonstration of Hole Transport and Voltage Equilibration in Self-Assembled π-Conjugated Peptide Nanostructures Using Field-Effect Transistor Architectures.

PubMed

Besar, Kalpana; Ardoña, Herdeline Ann M; Tovar, John D; Katz, Howard E

2015-12-22

π-Conjugated peptide materials are attractive for bioelectronics due to their unique photophysical characteristics, biofunctional interfaces, and processability under aqueous conditions. In order to be relevant for electrical applications, these types of materials must be able to support the passage of current and the transmission of applied voltages. Presented herein is an investigation of both the current and voltage transmission activities of one-dimensional π-conjugated peptide nanostructures. Observations of the nanostructures as both semiconducting and gate layers in organic field-effect transistors (OFETs) were made, and the effect of systematic changes in amino acid composition on the semiconducting/conducting functionality of the nanostructures was investigated. These molecular variations directly impacted the hole mobility values observed for the nanomaterial active layers over 3 orders of magnitude (∼0.02 to 5 × 10(-5) cm(2) V(-1) s(-1)) when the nanostructures had quaterthiophene cores and the assembled peptide materials spanned source and drain electrodes. Peptides without the quaterthiophene core were used as controls and did not show field-effect currents, verifying that the transport properties of the nanostructures rely on the semiconducting behavior of the π-electron core and not just ionic rearrangements. We also showed that the nanomaterials could act as gate electrodes and assessed the effect of varying the gate dielectric layer thickness in devices where the conventional organic semiconductor pentacene spanned the source and drain electrodes in a top-contact OFET, showing an optimum performance with 35-40 nm dielectric thickness. This study shows that these peptides that self-assemble in aqueous environments can be used successfully to transmit electronic signals over biologically relevant distances.

An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

NASA Astrophysics Data System (ADS)

Huanqin, Dang; Xiaoming, Wu; Xiaowei, Sun; Runqiu, Zou; Ruochuan, Zhang; Shougen, Yin

2015-10-01

We report an effective method to improve the performance of p-type copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) by employing a thin para-quaterphenyl (p-4p) film and simultaneously applying V2O5 to the source/drain regions. The p-4p layer was inserted between the insulating layer and the active layer, and V2O5 layer was added between CuPc and Al in the source-drain (S/D) area. As a result, the field-effect saturation mobility and on/off current ratio of the optimized device were improved to 5 × 10-2 cm2/(V·s) and 104, respectively. We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers. Moreover, by introducing the V2O5 electrode's modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced. Project supported by the National Natural Science Foundation of China (No. 60676051), the National High Technology Research and Development Program of China (No. 2013A A014201), the Scientific Developing Foundation of Tianjin Education Commission (No. 2011ZD02), the Key Science and Technology Support Program of Tianjin (No. 14ZCZDGX00006), and the Foundation of Key Discipline of Material Physics and Chemistry of Tianjin.

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.

Spiers memorial lecture. Organic electronics: an organic materials perspective.

PubMed

Wudl, Fred

2014-01-01

This Introductory Lecture is intended to provide a background to Faraday Discussion 174: "Organic Photonics and Electronics" and will consist of a chronological, subjective review of organic electronics. Starting with "ancient history" (1888) and history (1950-present), the article will take us to the present. The principal developments involved the processes of charge carrier generation and charge transport in molecular solids, starting with insulators (photoconductors) and moving to metals, to semiconductors and ending with the most popular semiconductor devices, such as organic light-emitting diodes (OLEDs), organic field effect transistors (OFETs) and organic photovoltaics (OPVs). The presentation will be from an organic chemistry/materials point of view.

Design, synthesis, characterization, and OFET properties of amphiphilic heteroleptic tris(phthalocyaninato) europium(III) complexes. The effect of crown ether hydrophilic substituents.

PubMed

Gao, Yingning; Ma, Pan; Chen, Yanli; Zhang, Ying; Bian, Yongzhong; Li, Xiyou; Jiang, Jianzhuang; Ma, Changqin

2009-01-05

Two amphiphilic heteroleptic tris(phthalocyaninato) europium complexes with hydrophilic crown ether heads and hydrophobic octyloxy tails [Pc(mCn)(4)]Eu[Pc(mCn)(4)]Eu[Pc(OC(8)H(17))(8)] [m = 12, n = 4, H(2)Pc(12C4)(4) = 2,3,9,10,16,17,23,24-tetrakis(12-crown-4)phthalocyanine; m = 18, n = 6, H(2)Pc(18C6)(4) = 2,3,9,10,16,17,23,24-tetrakis(18-crown-6)phthalocyanine; H(2)Pc(OC(8)H(17))(8) = 2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyanine] (1, 2) were designed and prepared from the reaction between homoleptic bis(phthalocyaninato) europium compound [Pc(mCn)(4)]Eu[Pc(mCn)(4)] (m = 12, n = 4; m = 18, n = 6) and metal-free H(2)Pc(OC(8)H(17))(8) in the presence of Eu(acac)(3).H(2)O (Hacac = acetylacetone) in boiling 1,2,4-trichlorobenzene. These novel sandwich triple-decker complexes were characterized by a wide range of spectroscopic methods and electrochemically studied. With the help of the Langmuir-Blodgett technique, these typical amphiphilic triple-decker complexes were fabricated into organic field effect transistors (OFET) with top contact configuration on bare SiO(2)/Si substrate, hexamethyldisilazane-treated SiO(2)/Si substrate, and octadecyltrichlorosilane (OTS)-treated SiO(2)/Si substrate, respectively. The device performance is revealed to be dependent on the species of crown ether substituents and substrate surface treatment. OFETs fabricated from the triple decker with 12-crown-4 hydrophilic substituents, 1, allow the hole transfer in the direction parallel to the aromatic phthalocyanine rings. In contrast, the devices of a triple-decker compound containing 18-crown-6 as hydrophilic heads, 2, transfer holes in a direction along the long axis of the assembly composed of face-to-face aggregated triple-decker molecules, revealing the effect of molecular structure, specifically the crown ether substituents on the film structure and OFET functional properties. The carrier mobility for hole as high as 0.33 cm(2) V(-1) s(-1) and current modulation of 7.91 x 10(5) were reached for the devices of triple-decker compound 1 deposited on the OTS-treated SiO(2)/Si substrates, indicating the effect of substrate surface treatment on the OFET performance due to the improvement on the film quality as demonstrated by the atomic force microscope investigation results.

The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Micolich, A. P.; Cochrane, J. W.; Hamilton, A. R.

2007-12-01

There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.

Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation

NASA Astrophysics Data System (ADS)

Maeda, Yasutaka; Hiroki, Mizuha; Ohmi, Shun-ichiro

2018-04-01

Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10-3 to 0.11 cm2/(V·s), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.

Structural Evaluation of 5,5'-Bis(naphth-2-yl)-2,2'-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric.

PubMed

Lauritzen, Andreas E; Torkkeli, Mika; Bikondoa, Oier; Linnet, Jes; Tavares, Luciana; Kjelstrup-Hansen, Jakob; Knaapila, Matti

2018-05-25

We report on the structure and morphology of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO 2 gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X-ray diffraction (GIXRD), and electrical transport measurements. Three types of devices were investigated with the NaT2 thin-film deposited either on (1) pristine SiO 2 (corresponding to higher surface energy, 47 mJ/m 2 ) or on OTS deposited on SiO 2 under (2) anhydrous or (3) humid conditions (corresponding to lower surface energies, 20-25 mJ/m 2 ). NaT2 films grown on pristine SiO 2 form nearly featureless three-dimensional islands. NaT2 films grown on OTS/SiO 2 deposited under anhydrous conditions form staggered pyramid islands where the interlayer spacing corresponds to the size of the NaT2 unit cell. At the same time, the grain size measured by AFM increases from hundreds of nanometers to micrometers and the crystal size measured by GIXRD from 30 nm to more than 100 nm. NaT2 on OTS/SiO 2 deposited under humid conditions also promotes staggered pyramids but with smaller crystals 30-80 nm. The NaT2 unit cell parameters in OFETs differ 1-2% from those in bulk. Carrier mobilities tend to be higher for NaT2 layers on SiO 2 (2-3 × 10 -4 cm 2 /(V s)) compared to NaT2 on OTS (2 × 10 -5 -1 × 10 -4 cm 2 /(V s)). An applied voltage does not influence the unit cell parameters when probed by GIXRD in operando.

Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements

NASA Astrophysics Data System (ADS)

Zhang, Le; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-05-01

By using current-voltage (I-V) measurements and optical modulation spectroscopy, we investigated the dependence of the carrier behaviour on the film thickness of the buried pentacene layer in C60/pentacene ambipolar double-layer organic field-effect transistors (OFETs). It was found that the buried pentacene layer not only acted as a hole transport layer, but also accounted for the properties of the C60/pentacene interface. The hole and electron behaviour exhibited different thickness dependence on the buried pentacene layer, implying the presence of the spatially separated conduction paths. It was suggested that the injected holes transported along the pentacene/gate dielectric interface, which were little affected by the buried pentacene layer thickness or the upper C60 layer; while, the injected electrons accumulated at the C60/pentacene interface, which were sensitive to the interfacial conditions or the buried pentacene layer. Furthermore, it was suggested that the enhanced surface roughness of the buried pentacene layer was responsible for the observed electron behaviour, especially when dpent>10 nm.

Electron spin resonance observation of charge carrier concentration in organic field-effect transistors during device operation

NASA Astrophysics Data System (ADS)

Tanaka, Hisaaki; Hirate, Masataka; Watanabe, Shun-ichiro; Kaneko, Kazuaki; Marumoto, Kazuhiro; Takenobu, Taishi; Iwasa, Yoshihiro; Kuroda, Shin-ichi

2013-01-01

Charge carrier concentration in operating organic field-effect transistors (OFETs) reflects the electric potential within the channel, acting as a key quantity to clarify the operation mechanism of the device. Here, we demonstrate a direct determination of charge carrier concentration in the operating devices of pentacene and poly(3-hexylthiophene) (P3HT) by field-induced electron spin resonance (FI-ESR) spectroscopy. This method sensitively detects polarons induced by applying gate voltage, giving a clear FI-ESR signal around g=2.003 in both devices. Upon applying drain-source voltage, carrier concentration decreases monotonically in the FET linear region, reaching about 70% of the initial value at the pinch-off point, and stayed constant in the saturation region. The observed results are reproduced well from the theoretical potential profile based on the gradual channel model. In particular, the carrier concentration at the pinch-off point is calculated to be β/(β+1) of the initial value, where β is the power exponent in the gate voltage (Vgs) dependence of the mobility (μ), expressed as μ∝Vgsβ-2, providing detailed information of charge transport. The present devices show β=2.6 for the pentacene and β=2.3 for the P3HT cases, consistent with those determined by transfer characteristics. The gate voltage dependence of the mobility, originating from the charge trapping at the device interface, is confirmed microscopically by the motional narrowing of the FI-ESR spectra.

Isomeric organic semiconductors containing fused-thiophene cores: molecular packing and charge transport.

PubMed

Dang, Dongfeng; Zhou, Pei; Wu, Yong; Xu, Yanzi; Zhi, Ying; Zhu, Weiguo

2018-05-16

Isomeric TF1 and TF2 with highly fused thiophene cores were designed and synthesized here, in which a highly planar molecular structure was obtained for TF1 with the face-to-face sulfur atoms in the lateral region and a twisted molecular backbone was observed for TF2 with the back-to-back sulfur atoms. It is worth noting that different intermolecular interactions dominated in TF1 and TF2 caused by their isomeric thiophene cores, in which strong π-π stacking was achieved for TF1, whereas sulphur-involved nonbonding intermolecular interactions dominated in TF2, leading to the different fluorescence behaviors and also the altered liquid crystalline phases. Finally, typical P-type charge transport behaviors were achieved in both TF1- and TF2-based solution-processed OFETs. Also owing to the much ordered molecular packing in TF1, a higher charge carrier mobility of 3.7 × 10-3 cm2 V-1 s-1 was achieved for TF1-based OFETs compared to TF2-based OFETs.

A printed electronic platform for the specific detection of biomolecules

NASA Astrophysics Data System (ADS)

Doumbia, A.; Webb, M.; Turner, M. L.; Behrendt, J. M.; Wilson, R.

2017-08-01

The rapid detection of disease specific biomarkers in a clinically relevant range using a low-cost sensor can facilitate the development of individual treatment plans for a given patient, known as precision, personalized or genomic medicine. In the recent decade Electrolyte-Gated Organic Field Effect Transistors (EGOFETs), a subtype of OFETs where the dielectric is replaced by an electrolyte, have attracted a great deal of attention for sensing applications. This is due to their capacity to operate at low voltage (< 1 volt) in physiological like media. Although EGOFET based biosensors have been shown to specifically detect biomolecules with high sensitivity and selectivity; the stability, reproducibility, and performance required to reach the desired market are not yet achieved. In this contribution, we describe the development of a stable and reproducible EGOFET sensor that is able to detect biomolecules selectively in real-time. Facile and scalable techniques are used to prepare arrays of these devices. The selectivity of individual EGOFETs is investigated by immobilization of specific ligands to the target molecule of interest on the gate electrode within a microfluidic flow cell.

Effect of molecular asymmetry on the charge transport physics of high mobility n-type molecular semiconductors investigated by scanning Kelvin probe microscopy.

PubMed

Hu, Yuanyuan; Berdunov, Nikolai; Di, Chong-an; Nandhakumar, Iris; Zhang, Fengjiao; Gao, Xike; Zhu, Daoben; Sirringhaus, Henning

2014-07-22

We have investigated the influence of the symmetry of the side chain substituents in high-mobility, solution processable n-type molecular semiconductors on the performance of organic field-effect transistors (OFETs). We compare two molecules with the same conjugated core, but either symmetric or asymmetric side chain substituents, and investigate the transport properties and thin film growth mode using scanning Kelvin probe microscopy (SKPM) and atomic force microscopy (AFM). We find that asymmetric side chains can induce a favorable two-dimensional growth mode with a bilayer structure, which enables ultrathin films with a single bilayer to exhibit excellent transport properties, while the symmetric molecules adopt an unfavorable three-dimensional growth mode in which transport in the first monolayer at the interface is severely hindered by high-resistance grain boundaries.

Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors.

PubMed

Tremblay, Noah J; Jung, Byung Jun; Breysse, Patrick; Katz, Howard E

2011-11-22

Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

PubMed Central

Tremblay, Noah J.; Jung, Byung Jun; Breysse, Patrick; Katz, Howard E.

2013-01-01

Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. PMID:23754969

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Organic semiconductor crystals.

PubMed

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Nucleation, Growth, and Alignment of Poly(3-hexylthiophene) Nanofibers for High-Performance OFETs.

PubMed

Persson, Nils E; Chu, Ping-Hsun; McBride, Michael; Grover, Martha; Reichmanis, Elsa

2017-04-18

Conjugated semiconducting polymers have been the subject of intense study for over two decades with promising advances toward a printable electronics manufacturing ecosystem. These materials will deliver functional electronic devices that are lightweight, flexible, large-area, and cost-effective, with applications ranging from biomedical sensors to solar cells. Synthesis of novel molecules has led to significant improvements in charge carrier mobility, a defining electrical performance metric for many applications. However, the solution processing and thin film deposition of conjugated polymers must also be properly controlled to obtain reproducible device performance. This has led to an abundance of research on the process-structure-property relationships governing the microstructural evolution of the model semicrystalline poly(3-hexylthiophene) (P3HT) as applied to organic field effect transistor (OFET) fabrication. What followed was the production of an expansive body of work on the crystallization, self-assembly, and charge transport behavior of this semiflexible polymer whose strong π-π stacking interactions allow for highly creative methods of structural control, including the modulation of solvent and solution properties, flow-induced crystallization and alignment techniques, structural templating, and solid-state thermal and mechanical processing. This Account relates recent progress in the microstructural control of P3HT thin films through the nucleation, growth, and alignment of P3HT nanofibers. Solution-based nanofiber formation allows one to develop structural order prior to thin film deposition, mitigating the need for intricate deposition processes and enabling the use of batch and continuous chemical processing steps. Fiber growth is framed as a traditional crystallization problem, with the balance between nucleation and growth rates determining the fiber size and ultimately the distribution of grain boundaries in the solid state. Control of nucleation can be accomplished through a sonication-based seeding procedure, while growth can be modulated through supersaturation control via the tuning of solvent quality, the use of UV irradiation or through aging. These principles carry over to the flow-induced growth of P3HT nanofibers in a continuous microfluidic processing system, leading to thin films with significantly enhanced mobility. Further gains can be made by promoting long-range polymer chain alignment, achieved by depositing nanofibers through shear-based coating methods that promote high fiber packing density and alignment. All of these developments in processing were carried out on a standard OFET platform, enabling us to generalize quantitative structure-property relationships from structural data sources such as UV-vis, AFM, and GIWAXS. It is shown that a linear correlation exists between mobility and the in-plane orientational order of nanofibers, as extracted from AFM images using advanced computer vision software developed by our group. Herein, we discuss data-driven approaches to the determination of process-structure-property relationships, as well as the transferability of structural control strategies for P3HT to other conjugated polymer systems and applications.

Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

PubMed

de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

2016-11-18

There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10 -4 cm 2 V -1 s -1 , these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

Solubility- and temperature-driven thin film structures of polymeric thiophene derivatives for high performance OFET applications

NASA Astrophysics Data System (ADS)

LeFevre, Scott W.; Bao, Zhenan; Ryu, Chang Y.; Siegel, Richard W.; Yang, Hoichang

2007-09-01

It has been shown that high charge mobility in solution-processible organic semiconductor-based field effect transistors is due in part to a highly parallel π-π stacking plane orientation of the semiconductors with respect to gate-dielectric. Fast solvent evaporation methods, generally, exacerbate kinetically random crystal orientations in the films deposited, specifically, from good solvents. We have investigated solubility-driven thin film structures of thiophene derivative polymers via spin- and drop-casting with volatile solvents of a low boiling point. Among volatile solvents examined, marginal solvents, which have temperature-dependent solubility for the semiconductors (e.g. methylene chloride for regioregular poly(3-alkylthiophene)s), can be used to direct the favorable crystal orientation regardless of solvent drying time, when the temperature of gate-dielectrics is held to relatively cooler than the warm solution. Grazing-incidence X-ray diffraction and atomic force microscopy strongly support that significant control of crystal orientation and mesoscale morphology using a "cold" substrate holds true for both drop and spin casting. The effects of physiochemical post-modificaiton on film crystal structures and morphologies of poly(9,9-dioctylfluorene-co-bithiophene) have also been investigated.

Organic Donor-Acceptor Complexes as Novel Organic Semiconductors.

PubMed

Zhang, Jing; Xu, Wei; Sheng, Peng; Zhao, Guangyao; Zhu, Daoben

2017-07-18

Organic donor-acceptor (DA) complexes have attracted wide attention in recent decades, resulting in the rapid development of organic binary system electronics. The design and synthesis of organic DA complexes with a variety of component structures have mainly focused on metallicity (or even superconductivity), emission, or ferroelectricity studies. Further efforts have been made in high-performance electronic investigations. The chemical versatility of organic semiconductors provides DA complexes with a great number of possibilities for semiconducting applications. Organic DA complexes extend the semiconductor family and promote charge separation and transport in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). In OFETs, the organic complex serves as an active layer across extraordinary charge pathways, ensuring the efficient transport of induced charges. Although an increasing number of organic semiconductors have been reported to exhibit good p- or n-type properties (mobilities higher than 1 or even 10 cm 2 V -1 s -1 ), critical scientific challenges remain in utilizing the advantages of existing semiconductor materials for more and wider applications while maintaining less complicated synthetic or device fabrication processes. DA complex materials have revealed new insight: their unique molecular packing and structure-property relationships. The combination of donors and acceptors could offer practical advantages compared with their unimolecular materials. First, growing crystals of DA complexes with densely packed structures will reduce impurities and traps from the self-assembly process. Second, complexes based on the original structural components could form superior mixture stacking, which can facilitate charge transport depending on the driving force in the coassembly process. Third, the effective use of organic semiconductors can lead to tunable band structures, allowing the operation mode (p- or n-type) of the transistor to be systematically controlled by changing the components. Finally, theoretical calculations based on cocrystals with unique stacking could widen our understanding of structure-property relationships and in turn help us design high-performance semiconductors based on DA complexes. In this Account, we focus on discussing organic DA complexes as a new class of semiconducting materials, including their design, growth methods, packing modes, charge-transport properties, and structure-property relationships. We have also fabricated and investigated devices based on these binary crystals. This interdisciplinary work combines techniques from the fields of self-assembly, crystallography, condensed-matter physics, and theoretical chemistry. Researchers have designed new complex systems, including donor and acceptor compounds that self-assemble in feasible ways into highly ordered cocrystals. We demonstrate that using this crystallization method can easily realize ambipolar or unipolar transport. To further improve device performance, we propose several design strategies, such as using new kinds of donors and acceptors, modulating the energy alignment of the donor (ionization potential, IP) and acceptor (electron affinity, EA) components, and extending the π-conjugated backbones. In addition, we have found that when we use molecular "doping" (2:1 cocrystallization), the charge-transport nature of organic semiconductors can be switched from hole-transport-dominated to electron-transport-dominated. We expect that the formation of cocrystals through the complexation of organic donor and acceptor species will serve as a new strategy to develop semiconductors for organic electronics with superior performances over their corresponding individual components.

A striking mobility improvement of C60 OFET by inserting diindenoperylene layer between C60 and SiO2 gate insulator

NASA Astrophysics Data System (ADS)

Yang, Jin-peng; Yonezawa, Keiichiro; Hinderhofer, Alexander; Bussolotti, Fabio; Kera, Satoshi; Ueno, Nobuo

2014-09-01

Gap states in organic semiconductors play a crucial role in determining Energy-Level Alignment and in many cases they act as charge trapping centers to result in serious lowering of charge mobility. Thus origin of gap states has gained increasing attention in order to realize higher mobility organic devises [1-4]. Bussolotti et al. have demonstrated recently that gap states in a pentacene thin film increase even by exposing the film to inert gas and confirmed that the gas exposure mediates structural defects in the film thus gap states [4]. The results have also indicated that preparation of highly-ordered organic thin film is necessary to improve the device performance, namely to decrease trapping states. To improve the ordering of molecule in the film, deposition of a template molecular underlayer is one of the simplest methods to increase the domain size of overlayer film and its crystallinity, and thus we expect improvement of the charge mobility [5]. Hinderhofer et al. reported recently that diindenoperylene (DIP; Figure 1a) could be used as a template layer to grow highly ordered and oriented C60 film with its (111) plane parallel to the SiO2 substrate [6]. Considering the hole mobility of DIP single crystal, which is quite low (~0.005 cm2 V-1S-1 at room temperature [7]), it is expected for the DIP template C60 thin film system that lower drain current would be achieved to improve the on/off ratios based on n type C60 transistor and its electron mobility (especially on the negative Vgs region, compared to PEN modified C60 transistors [8]).

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

PubMed

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Modification of symmetrically substituted phthalocyanines using click chemistry: phthalocyanine nanostructures by nanoimprint lithography.

PubMed

Chen, Xiaochun; Thomas, Jayan; Gangopadhyay, Palash; Norwood, Robert A; Peyghambarian, N; McGrath, Dominic V

2009-09-30

Phthalocyanines (Pcs) are commonly applied to advanced technologies such as optical limiting, photodynamic therapy (PDT), organic field-effect transistors (OFETs), and organic photovoltaic (OPV) devices, where they are used as the p-type layer. An approach to Pc structural diversity and the incorporation of a functional group that allows fabrication of solvent resistant Pc nanostructures formed by using a newly developed nanoimprint by melt processing (NIMP) technique, a variant of standard nanoimprint lithography (NIL), is reported. Copper(I)-catalyzed azide-alkyne cycloaddition (CuAAC), a click chemistry reaction, serves as an approach to structural diversity in Pc macrocycles. We have prepared octaalkynyl Pc 1b and have modified this Pc using the CuAAC reaction to yield four Pc derivatives 5a-5d with different peripheral substituents on the macrocycle. One of these derivatives, 5c, has photo-cross-linkable cinnamate residues, and we have demonstrated the fabrication of robust cross-linked photopatterned and imprinted nanostructures from this material.

Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Shashi B.; Singh, Samarendra P., E-mail: samarendra.singh@snu.edu.in; Sonar, Prashant

2015-07-15

Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C{sub 71} butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO{sub 3}/Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis ofmore » impedance spectra exhibits electron’s mobility ∼2 × 10{sup −3} cm{sup 2}V{sup −1}s{sup −1}, and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10{sup −5} cm{sup 2}V{sup −1}s{sup −1}, and electron mobility of 8.7 × 10{sup −4} cm{sup 2}V{sup −1}s{sup −1}.« less

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiaoyang

2014-12-10

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associatedmore » with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?« less

Solvent Additive-Assisted Anisotropic Assembly and Enhanced Charge Transport of π-Conjugated Polymer Thin Films.

PubMed

Jeong, Jae Won; Jo, Gyounglyul; Choi, Solip; Kim, Yoong Ahm; Yoon, Hyeonseok; Ryu, Sang-Wan; Jung, Jaehan; Chang, Mincheol

2018-05-30

Charge transport in π-conjugated polymer films involves π-π interactions within or between polymer chains. Here, we demonstrate a facile solution processing strategy that provides enhanced intra- and interchain π-π interactions of the resultant polymer films using a good solvent additive with low volatility. These increased interactions result in enhanced charge transport properties. The effect of the good solvent additive on the intra- and intermolecular interactions, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) films is systematically investigated. We found that the good solvent additive facilitates the self-assembly of P3HT chains into crystalline fibrillar nanostructures by extending the solvent drying time during thin-film formation. As compared to the prior approach using a nonsolvent additive with low volatility, the solvent blend system containing a good solvent additive results in enhanced charge transport in P3HT organic field-effect transistor (OFET) devices [from ca. 1.7 × 10 -2 to ca. 8.2 × 10 -2 cm 2 V -1 s -1 for dichlorobenzene (DCB) versus 4.4 × 10 -2 cm 2 V -1 s -1 for acetonitrile]. The mobility appears to be maximized over a broad spectrum of additive concentrations (1-7 vol %), indicative of a wide processing window. Detailed analysis results regarding the charge injection and transport characteristics of the OFET devices reveal that a high-boiling-point solvent additive decreases both the contact resistance ( R c ) and channel resistance ( R ch ), contributing to the mobility enhancement of the devices. Finally, the platform presented here is proven to be applicable to alternative good solvent additives with low volatility, such as chlorobenzene (CB) and trichlorobenzene (TCB). Specifically, the mobility enhancement of the resultant P3HT films increases in the order CB (bp 131 °C) < DCB (bp 180 °C) < TCB (bp 214 °C), suggesting that solvent additives with higher boiling points provide resultant films with preferable molecular ordering and morphologies for efficient charge transport.

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

PubMed Central

Jin Lee, Su; Kim, Yong-Jae; Young Yeo, So; Lee, Eunji; Sun Lim, Ho; Kim, Min; Song, Yong-Won; Cho, Jinhan; Ah Lim, Jung

2015-01-01

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step. PMID:26359068

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

PubMed

Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

2015-09-11

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

Dependence of Pentacene Crystal Growth on Dielectric Roughness for Fabrication of Flexible Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, H.; Yang, C; Kim, S

2010-01-01

The dependence of pentacene nanostructures on gate dielectric surfaces were investigated for flexible organic field-effect transistor (OFET) applications. Two bilayer types of polymer/aluminum oxide (Al{sub 2}O{sub 3}) gate dielectrics were fabricated on commercial Al foils laminated onto a polymer back plate. Some Al foils were directly used as gate electrodes, and others were smoothly polished by an electrolytic etching. These Al surfaces were then anodized and coated with poly({alpha}-methyl styrene) (PAMS). For PAMS/Al{sub 2}O{sub 3} dielectrics onto etched Al foils, surface roughness up to 1 nm could be reached, although isolated dimples with a lateral diameter of several micrometers weremore » still present. On PAMS/Al{sub 2}O{sub 3} dielectrics (surface roughness >40 nm) containing mechanical grooves of Al foil, average hole mobility ({mu}FET) of 50 nm thick pentacene-FETs under the low operating voltages (|V| < 6 V) was {approx}0.15 cm{sup 2} V{sup -1} s{sup -1}. In contrast, pentacene-FETs employing the etched Al gates exhibited {mu}FET of 0.39 cm{sup 2} V{sup -1} s{sup -1}, which was comparable to that of reference samples with PAMS/Al{sub 2}O{sub 3} dielectrics onto flat sputtered Al gates. Conducting-probe atomic force microscopy and two-dimensional X-ray diffraction of pentacene films with various thicknesses revealed different out-of-plane and in-plane crystal orderings of pentacene, depending on the surface roughness of the gate dielectrics.« less

Solvent Effect on Morphology and Optical Properties of Poly(3-hexylthiophene):TIPS-Pentacene Blends

NASA Astrophysics Data System (ADS)

Ozório, Maíza Silva; Camacho, Sabrina Alessio; Cordeiro, Neusmar Junior Artico; Duarte, José Leonil; Alves, Neri

2018-02-01

Optical, electrical, and morphological properties of poly(3-hexylthiophene):6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene (P3HT:TP) blend films, in the proportion of 1:1 (w/w), have been investigated using chloroform, toluene, or trichlorobenzene as solvent. The main morphological feature was formation of aggregates that tended to segregate vertically, exhibiting characteristics that were strongly influenced by the type of solvent applied. The phase segregation of TP observed for the P3HT:TP blend film obtained using chloroform, the most volatile of the investigated solvents, can be explained based on the Marangoni effect and the Flory-Huggins model. The TP molecules induce better organization of P3HT, as evidenced by the ultraviolet-visible (UV-Vis) absorption spectra. Photoluminescence (PL) measurements revealed quenching and an increase in the lifetime of the carriers. The PL measurements also showed that the exciton dissociation was dependent on the characteristics of the surface on which the film was deposited. P3HT:TP blend film prepared using trichlorobenzene showed the best morphology with moderate phase segregation and better P3HT ordering. The output current from organic field-effect transistors (OFETs) with blend film prepared using trichlorobenzene was three times (3×) larger than when using the other solvents, with carrier mobility of 5.0 × 10-3 cm2 V-1 s-1.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Y Itoh; B Kim; R Gearba

C{sub 60} and C{sub 60}-ferrocene conjugated molecule bearing five carboxylic acids successfully anchor onto a silicon oxide surface as a monolayer through a simple method of simply dipping an amino-terminated surface into the solution of the C{sub 60} derivatives. The monolayer structure was characterized by UV-vis spectroscopy, X-ray reflectivity, X-ray photoelectron spectroscopy, and IR spectroscopy to reveal that the molecules are standing presenting its C{sub 60} spherical face at the surface. The electronic effect of the C{sub 60} monolayer and the ferrocene-functionalized C{sub 60} monolayer in OFET devices was investigated. When an n-type OFET was fabricated on the ferrocene functionalizedmore » monolayer, we see an enhancement in the mobility. When a p-type OFET was made the ferrocene-functionalized C{sub 60} monolayer showed a lowering of the carrier mobility.« less

Charge injection and transport in regioregular poly(3-hexylthiophene)-based field-effect transistors

NASA Astrophysics Data System (ADS)

Singh, Kumar Abhishek

Organic (semi)conductors are poised as never before to transform the electronics industry towards unprecedented versatility. In this thesis, we have taken an experimental approach to address the effect of nanostructure and the energy-level alignment at the metal/polymer interface on charge injection and transport in regioregular poly(3-hexylthiophene) (rr-P3HT) based field-effect transistors (FETs). We found that the mobility and contact resistance in rr-P3HT based FETs show an inverse relationship, and that both properties were affected by the nanostructure of the polymer proving that that charge injection, in addition to charge transport, is significantly affected by the bulk-transport properties of rr-P3HT. Thereafter we successfully recessed the contacts into the SiO 2 dielectric to minimize the effect of the step between the metal contacts and the dielectric on the polymer nanomorphology. The planarization of the devices resulted in a dramatic improvement of the nanomorphology of rr-P3HT reflected as an improvement in charge injection as evident from the decrease in contact resistance values. Gold contacts were also modified by treating them with self-assembled monolayers (SAMs) of aromatic thiols. Electron-poor (electron-rich) SAMs resulted in an increase (decrease) in the Au work function because of the electron-withdrawing (-donating) tendency of the polar molecules. The change in metal work-function by SAM modification also resulted in a modulation of the contact resistance. While there was a clear effect on charge injection upon modification of the contacts, either by SAMs or planarization, the mobility values improved only in the short-channel devices indicating that at longer channels the OFETs are channel-limited because of grain-boundary limited charge transport. Photoemission spectroscopy was also conducted to investigate the energy level alignment at bottom-contact (polymer-on-metal) and top-contact (metal-on-polymer) geometries for high work function metals (Au, Pt) and rr-P3HT. The Fermi energy level was found to be pinned at the polaronic energy level within the band gap of rr-P3HT resulting in barrier-less interfaces for charge injection. Photoemission spectroscopy studies of the metal-on-polymer configuration also provided insight into the chemical structure of the metal/polymer interface. Platinum was found to react with sulfur from the thiophene ring whereas Au was found to be relatively unreactive.

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

PubMed

Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

2018-05-23

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

Antimonide-Based Compound Semiconductors for Low-Power Electronics

DTIC Science & Technology

2013-01-01

A, Madan HS, Kirk AP, Zhao DA, Mourey DA, Hudait MK, et al. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of...et al. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure. Appl Phys Lett. 2012;101: 231601. [18] Ali A, Madan H

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Transistor-based interface circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2007-02-13

Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

PubMed

Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

2013-08-21

For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transistor-based particle detection systems and methods

DOEpatents

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

2015-06-09

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

Combined quantum chemical density functional theory and spectroscopic Raman and UV-vis-NIR study of oligothienoacenes with five and seven rings.

PubMed

Osuna, Reyes Malavé; Zhang, Xinnan; Matzger, Adam Jay; Hernandez, Víctor; López Navarrete, Juan Teodomiro

2006-04-20

In this article, we report the characterization of novel oligothienoacenes with five and seven fused thiophene rings, materials with potential applications in organic electronics. In contrast to usual alpha-linked oligothiophenes, these fused oligothiophenes have a larger band gap than most semiconductors currently used in the fabrication of organic field-effect transistors (OFETs) and therefore they are expected to be more stable in air. The synthesis of these fused-ring oligomers was motivated by the notion that a more rigid and planar structure should reduce defects (such as torsion about single bonds between alpha-linked units or S-syn defects) and thus improve conjugation for better charge-carrier mobility. The conjugational properties of these two molecular materials have been investigated by means of FT-Raman spectroscopy, revealing that conjugation still increases in passing from the five-ring oligomer to that with seven-rings. DFT and TDDFT quantum chemical calculations have been performed, at the B3LYP/6-31G level, to assess information regarding the minimum-energy molecular structure, topologies, and absolute energies of the frontier molecular orbitals (MOs.) around the gap, vibrational normal modes related to the main Raman features, and vertical one-electron excitations giving rise to the main optical absorptions.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

PubMed Central

Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

2012-01-01

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

Universal power transistor base drive control unit

DOEpatents

Gale, Allan R.; Gritter, David J.

1988-01-01

A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

Universal power transistor base drive control unit

DOEpatents

Gale, A.R.; Gritter, D.J.

1988-06-07

A saturation condition regulator system for a power transistor is disclosed which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition. 2 figs.

Transistor-based filter for inhibiting load noise from entering a power supply

DOEpatents

Taubman, Matthew S

2013-07-02

A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal. The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

Transistor-based filter for inhibiting load noise from entering a power supply

DOEpatents

Taubman, Matthew S

2015-02-24

A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

Graphene-based flexible and stretchable thin film transistors.

PubMed

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

PubMed

Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

2017-01-11

Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

Dual-mode operation of 2D material-base hot electron transistors

PubMed Central

Lan, Yann-Wen; Torres, Jr., Carlos M.; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications. PMID:27581550

Dual-mode operation of 2D material-base hot electron transistors.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Current control circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2005-03-15

Among the embodiments of the present invention is an apparatus that includes a transistor (30), a servo device (40), and a current source (50). The servo device (40) is operable to provide a common base mode of operation of the transistor (30) by maintaining an approximately constant voltage level at the transistor base (32b). The current source (150) is operable to provide a bias current to the transistor (30). A first device (24) provides an input signal to an electrical node (70) positioned between the emitter (32e) of the transistor (30) and the current source (50). A second device (26) receives an output signal from the collector (32c) of the transistor (30).

Efficient G(sup 4)FET-Based Logic Circuits

NASA Technical Reports Server (NTRS)

Vatan, Farrokh

2008-01-01

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

Npn double heterostructure bipolar transistor with ingaasn base region

DOEpatents

Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

2004-07-20

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Scalable fabrication of strongly textured organic semiconductor micropatterns by capillary force lithography.

PubMed

Jo, Pil Sung; Vailionis, Arturas; Park, Young Min; Salleo, Alberto

2012-06-26

Strongly textured organic semiconductor micropatterns made of the small molecule dioctylbenzothienobenzothiophene (C(8)-BTBT) are fabricated by using a method based on capillary force lithography (CFL). This technique provides the C(8)-BTBT solution with nucleation sites for directional growth, and can be used as a scalable way to produce high quality crystalline arrays in desired regions of a substrate for OFET applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue

2017-08-01

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

Carbon nanotube and graphene device modeling and simulation

NASA Astrophysics Data System (ADS)

Yoon, Young Ki

The performance of the semiconductors has been improved and the price has gone down for decades. It has been continuously scaled down in size year by year, and now it encounters the fundamental scaling limit. We, therefore, should prepare a new era beyond the conventional semiconductor technologies. One of the most promising devices is possible by carbon nanotube (CNT) or graphene nanoribbon (GNR) in terms of its excellent charge transport properties. Their fundamental material properties and device physics are totally different to those of the conventional devices. In this nano-regime, more sophisticated device modeling and simulation are really needed to elucidate nano-device operation and to save our resources from errors. The numerical simulation works in this dissertation will provide novel view points on the emerging devices. In this dissertation, CNT and GNR devices are numerically studied. The first part of this work is on CNT devices, and a common structure of CNT device has CNT channel, metal source and drain contacts, and gate electrode. We investigate the strain, geometry, and scattering effects on the device performance of CNT field-effect transistors (FETs). It is shown that even a small amount of strain can result in a large effect on the performance of CNTFETs due to the variation of the bandgap and band-structure-limited velocity. A type of strain which produces a larger bandgap results in increased Schottky barrier (SB) height and decreased band-structure-limited velocity, and hence a smaller minimum leakage current, smaller on current, larger maximum achievable Ion/Ioff, and larger intrinsic delay. We also examine geometry effect of partial gate CNTFETs. In the growth process of vertical CNT, underlap between the gate and the bottom electrode is advantageous for transistor operation because it suppresses ambipolar conduction of SBFETs. Both n-type and p-type transistor operations with balanced performance metrics can be achieved on a single partial gate FET by using proper bias schemes. The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier CNTFETs is also examined. Carriers are mostly scattered by optical and zone boundary phonons beyond the beginning of the channel. The scattering has a small direct effect on the DC on current of the CNTFET, but it results in significant decrease of intrinsic cut-off frequency and increase of intrinsic delay. Semiconducting CNT is useful for the channel in CNTFETs, whereas metallic CNT can be used as an electrode. If a porous CNT film is used as a source electrode, vertical thin-film transistors (TFTs) can be constructed. Vertical organic FET (OFET) shows clear transistor switching behavior allowing orders of magnitude modulation of the source-drain current even in the presence of electrostatic screening by the source electrode. The channel length should be carefully engineered due to the trade-off between device characteristics in the subthreshold and above-threshold regions. The second subject is device simulations of GNRFETs. Even though GNR is also graphene-based quasi-1D nanostructure like CNT, the differences in shape, boundary condition, and existence of edges and dangling bonds make it operate in a different way. Atomistic 3D simulation study of the performance of GNR SBFETs is presented. The impacts of non-idealities on device performance have been investigated. The edges of GNR, which do not exist in CNT, can be advantages or disadvantages. If an appropriate control by different edge atoms is possible, it would be definitely positive. Totally new electronic band structure is obtained by different edge-termination atoms. In addition, only a fraction of impurity atom can also much affect on the material properties of GNR. In order to perform device simulations of non-uniform GNR devices, multiscale simulation scheme can be used in non-equilibrium Green's function (NEGF) formalism and density-functional method.

Base drive circuit

DOEpatents

Lange, A.C.

1995-04-04

An improved base drive circuit having a level shifter for providing bistable input signals to a pair of non-linear delays. The non-linear delays provide gate control to a corresponding pair of field effect transistors through a corresponding pair of buffer components. The non-linear delays provide delayed turn-on for each of the field effect transistors while an associated pair of transistors shunt the non-linear delays during turn-off of the associated field effect transistor. 2 figures.

A 10kW series resonant converter design, transistor characterization, and base-drive optimization

NASA Technical Reports Server (NTRS)

Robson, R.; Hancock, D.

1981-01-01

Transistors are characterized for use as switches in resonant circuit applications. A base drive circuit to provide the optimal base drive to these transistors under resonant circuit conditions is developed and then used in the design, fabrication and testing of a breadboard, spaceborne type 10 kW series resonant converter.

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

PubMed

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

Quantum structures for recombination control in the light-emitting transistor

NASA Astrophysics Data System (ADS)

Chen, Kanuo; Hsiao, Fu-Chen; Joy, Brittany; Dallesasse, John M.

2017-02-01

Recombination of carriers in the direct-bandgap base of a transistor-injected quantum cascade laser (TI-QCL) is shown to be controllable through the field applied across the quantum cascade region located in the transistor's base-collector junction. The influence of the electric field on the quantum states in the cascade region's superlattice allows free flow of electrons out of the transistor base only for field values near the design field that provides optimal QCL gain. Quantum modulation of base recombination in the light-emitting transistor is therefore observed. In a GaAs-based light-emitting transistor, a periodic superlattice is grown between the p-type base and the n-type collector. Under different base-collector biasing conditions the distribution of quantum states, and as a consequence transition probabilities through the wells and barriers forming the cascade region, leads to strong field-dependent mobility for electrons in transit through the base-collector junction. The radiative base recombination, which is influenced by minority carrier transition lifetime, can be modulated through the quantum states alignment in the superlattice. A GaAs-based transistor-injected quantum cascade laser with AlGaAs/GaAs superlattice is designed and fabricated. Radiative base recombination is measured under both common-emitter and common-base configuration. In both configurations the optical output from the base is proportional to the emitter injection. When the quantum states in the superlattice are aligned the optical output in the base is reduced as electrons encounter less impedance entering the collector; when the quantum states are misaligned electrons have longer lifetime in the base and the radiative base recombination process is enhanced.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Complementary spin transistor using a quantum well channel.

PubMed

Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

2017-04-20

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

NASA Astrophysics Data System (ADS)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Conjugated Polymer Zwitterions: Efficient Interlayer Materials in Organic Electronics.

PubMed

Liu, Yao; Duzhko, Volodimyr V; Page, Zachariah A; Emrick, Todd; Russell, Thomas P

2016-11-15

Conjugated polymer zwitterions (CPZs) are neutral, hydrophilic, polymer semiconductors. The pendent zwitterions, viewed as side chain dipoles, impart solubility in polar solvents for solution processing, and open opportunities as interfacial components of optoelectronic devices, for example, between metal electrodes and organic semiconductor active layers. Such interlayers are crucial for defining the performance of organic electronic devices, e.g., field-effect transistors (OFETs), light-emitting diodes (OLEDs), and photovoltaics (OPVs), all of which consist of multilayer structures. The interlayers reduce the Schottky barrier height and thus improve charge injection in OFETs and OLEDs. In OPVs, the interlayers serve to increase the built-in electric potential difference (V bi ) across the active layer, ensuring efficient extraction of photogenerated charge carriers. In general, polar and even charged electronically active polymers have gained recognition for their ability to modify metal/semiconductor interfaces to the benefit of organic electronics. While conjugated polyelectrolytes (CPEs) as interlayer materials are well-documented, open questions remain about the role of mobile counterions in CPE-containing devices. CPZs possess the processing advantages of CPEs, but as neutral molecules lack any potential complications associated with counterions. The electronic implications of CPZs on metal electrodes stem from the orientation of the zwitterion dipole moment in close proximity to the metal surface, and the resultant surface-induced polarization. This generates an interfacial dipole (Δ) at the CPZ/metal interface, altering the work function of the electrode, as confirmed by ultraviolet photoelectron spectroscopy (UPS), and improving device performance. An ideal cathode interlayer would reduce electrode work function, have orthogonal processability to the active layer, exhibit good film forming properties (i.e., wettability/uniformity), prevent exciton quenching, possess optimal electron affinity that neither limits the work function reduction nor impedes the charge extraction, transport electrons selectively, and exhibit long-term stability. Our recent discoveries show that CPZs achieve many of these attributes, and are poised for further expansion and development in the interfacial science of organic electronics. This Account reviews a recent collaboration that began with the synthesis of CPZs and a study of their structural and electronic properties on metals, then extended to their application as interlayer materials for OPVs. We discuss CPZ structure-property relationships based on several material platforms, ranging from homopolymers to copolymers, and from materials with intrinsic p-type conjugated backbones to those with intrinsic n-type conjugated backbones. We discuss key components of such interlayers, including (i) the origin of work function reduction of CPZ interlayers on metals; (ii) the role of the frontier molecular orbital energy levels and their trade-offs in optimizing electronic and device properties; and (iii) the role of polymer conductivity type and the magnitude of charge carrier mobility. Our motivation is to present our prior use and current understanding of CPZs as interlayer materials in organic electronics, and describe outstanding issues and future potential directions.

PH-Sensitive WO(3)-Based Microelectrochemical Transistors.

DTIC Science & Technology

1986-09-22

electronics, microelectrochemistry, microelectrodes, surface L- modification, molecuale based transistors, polyaniline , poly-3-methylthiophene Chemical...polymer, as in the cases of polypyrrole,8 poly(N-methyl pyrrole), 8b polyaniline , 9 or poly(3-methylthiophene),1 0 the polymer- % .4_. connected...Polypyrrole, 8 polyaniline , 9 and poly(3-methylthiophene) I0 are similar in that they are conducting when oxidized, and transistors based on these materials

Light programmable organic transistor memory device based on hybrid dielectric

NASA Astrophysics Data System (ADS)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

Electrochemical doping for lowering contact barriers in organic field effect transistors

PubMed Central

Schaur, Stefan; Stadler, Philipp; Meana-Esteban, Beatriz; Neugebauer, Helmut; Serdar Sariciftci, N.

2012-01-01

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices. PMID:23483101

Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch

NASA Astrophysics Data System (ADS)

Krampit, N. Yu; Kust, T. S.; Krampit, M. A.

2016-08-01

Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost and adequate performance of the work. Bead transfer principle is to change the voltage on the arc in the formation of beads on the wire end. Microcontroller controls transistor when the arc voltage reaches the threshold voltage. Thus there is a separation and transfer of beads without splashing. Control strategies tested on a real device and presented. The error in the operation of the device is less than 25 us, it can be used controlling drop transfer at high frequencies (up to 1300 Hz).

Theoretical and experimental characterization of the DUal-BAse transistor (DUBAT)

NASA Astrophysics Data System (ADS)

Wu, Chung-Yu; Wu, Ching-Yuan

1980-11-01

A new A-type integrated voltage controlled differential negative resistance device using an extra effective base region to form a lateral pnp (npn) bipolar transistor beside the original base region of a vertical npn (pnp) bipolar junction transistor, and so called the DUal BAse Transistor (DUBAT), is studied both experimentally and theoretically, The DUBAT has three terminals and is fully comparible with the existing bipolar integrated circuits technologies. Based upon the equivalent circuit of the DUBAT, a simple first-order analytical theory is developed, and important device parameters, such as: the I-V characteristic, the differential negative resistance, and the peak and valley points, are also characterized. One of the proposed integrated structures of the DUBAT, which is similar in structure to I 2L but with similar high density and a normally operated vertical npn transistor, has been successfully fabricated and studied. Comparisons between the experimental data and theoretical analyses are made, and show in satisfactory agreements.

Systematic design methodology for robust genetic transistors based on I/O specifications via promoter-RBS libraries.

PubMed

Lee, Yi-Ying; Hsu, Chih-Yuan; Lin, Ling-Jiun; Chang, Chih-Chun; Cheng, Hsiao-Chun; Yeh, Tsung-Hsien; Hu, Rei-Hsing; Lin, Che; Xie, Zhen; Chen, Bor-Sen

2013-10-27

Synthetic genetic transistors are vital for signal amplification and switching in genetic circuits. However, it is still problematic to efficiently select the adequate promoters, Ribosome Binding Sides (RBSs) and inducer concentrations to construct a genetic transistor with the desired linear amplification or switching in the Input/Output (I/O) characteristics for practical applications. Three kinds of promoter-RBS libraries, i.e., a constitutive promoter-RBS library, a repressor-regulated promoter-RBS library and an activator-regulated promoter-RBS library, are constructed for systematic genetic circuit design using the identified kinetic strengths of their promoter-RBS components.According to the dynamic model of genetic transistors, a design methodology for genetic transistors via a Genetic Algorithm (GA)-based searching algorithm is developed to search for a set of promoter-RBS components and adequate concentrations of inducers to achieve the prescribed I/O characteristics of a genetic transistor. Furthermore, according to design specifications for different types of genetic transistors, a look-up table is built for genetic transistor design, from which we could easily select an adequate set of promoter-RBS components and adequate concentrations of external inducers for a specific genetic transistor. This systematic design method will reduce the time spent using trial-and-error methods in the experimental procedure for a genetic transistor with a desired I/O characteristic. We demonstrate the applicability of our design methodology to genetic transistors that have desirable linear amplification or switching by employing promoter-RBS library searching.

Systematic design methodology for robust genetic transistors based on I/O specifications via promoter-RBS libraries

PubMed Central

2013-01-01

Background Synthetic genetic transistors are vital for signal amplification and switching in genetic circuits. However, it is still problematic to efficiently select the adequate promoters, Ribosome Binding Sides (RBSs) and inducer concentrations to construct a genetic transistor with the desired linear amplification or switching in the Input/Output (I/O) characteristics for practical applications. Results Three kinds of promoter-RBS libraries, i.e., a constitutive promoter-RBS library, a repressor-regulated promoter-RBS library and an activator-regulated promoter-RBS library, are constructed for systematic genetic circuit design using the identified kinetic strengths of their promoter-RBS components. According to the dynamic model of genetic transistors, a design methodology for genetic transistors via a Genetic Algorithm (GA)-based searching algorithm is developed to search for a set of promoter-RBS components and adequate concentrations of inducers to achieve the prescribed I/O characteristics of a genetic transistor. Furthermore, according to design specifications for different types of genetic transistors, a look-up table is built for genetic transistor design, from which we could easily select an adequate set of promoter-RBS components and adequate concentrations of external inducers for a specific genetic transistor. Conclusion This systematic design method will reduce the time spent using trial-and-error methods in the experimental procedure for a genetic transistor with a desired I/O characteristic. We demonstrate the applicability of our design methodology to genetic transistors that have desirable linear amplification or switching by employing promoter-RBS library searching. PMID:24160305

PH Sensitive WO3-Based Microelectrochemical Transistors.

DTIC Science & Technology

1986-09-22

molecular electronics, microelectrochemistr microelectrodes, sur ace modtfication, molecule-based transistors, .... " polyaniline , poly-3-methylthiophene...polypyrrole,8 poly(N-methyl pyrrole),8b polyaniline , 9 or poly(3-methylthiophene),1 0 the polymer- ’-p2 ’ -p " ; , Q ’ , : ’ ’ ’ ... , , ’ i connected...VD. Polypyrrole, 8 polyaniline , 9 and poly(3-methylthiophene)1 0 are similar in that they are conducting when oxidized, and transistors based on these

Controlling charge current through a DNA based molecular transistor

NASA Astrophysics Data System (ADS)

Behnia, S.; Fathizadeh, S.; Ziaei, J.

2017-01-01

Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I-V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive.

Organic transistors making use of room temperature ionic liquids as gating medium

NASA Astrophysics Data System (ADS)

Hoyos, Jonathan Javier Sayago

The ability to couple ionic and electronic transport in organic transistors, based on pi conjugated organic materials for the transistor channel, can be particularly interesting to achieve low voltage transistor operation, i.e. below 1 V. The operation voltage in typical organic transistors based on conventional dielectrics (200 nm thick SiO2) is commonly higher than 10 V. Electrolyte-gated (EG) transistors, i.e. employing an electrolyte as the gating medium, permit current modulations of several orders of magnitude at relatively low gate voltages thanks to the exceptionally high capacitance at the electrolyte/transistor channel interface, in turn due to the low thickness (ca. 3 nm) of the electrical double layers forming at the electrolyte/semiconductor interface. Electrolytes based on room temperature ionic liquids (RTILs) are promising in EG transistor applications for their high electrochemical stability and good ionic conductivity. The main motivation behind this work is to achieve low voltage operation in organic transistors by making use of RTILs as gating medium. First we demonstrate the importance of the gate electrode material in the EG transistor performance. The use of high surface area carbon gate electrodes limits undesirable electrochemical processes and renders unnecessary the presence of a reference electrode to monitor the channel potential. This was demonstrated using activated carbon as gate electrode, the electronic conducting polymer MEH-PPV, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] channel material, and the ionic liquid [EMIM][TFSI] (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), as gating medium. Using high surface area gate electrodes resulted in sub-1 V operation and charge carrier mobilities of (1.0 +/- 0.5) x 10-2 cm2V -1s-1. A challenge in the field of EG transistors is to decrease their response time, a consequence of the slow ion redistribution in the transistor channel upon application of electric biases. We systematically investigated EG transistors employing RTILs belonging to the same family, i.e. based on a common anion and different cations. The transistor characteristics showed a limited cation influence in establishing the p-type doping of the conducting polymer. Interestingly, we observed that the transistor response time depends on at least two processes: the redistribution of ions from the electrolyte into the transistor channel, affecting the gate-source current (I gs); and the redistribution of charges in the transistor channel, affecting the drain-source current (Ids), as a function of time. The two processes have different rates, with the latter being the slowest. Incorporating propylene carbonate in the electrolyte proved to be an effective solution to increase the ionic conductivity, to lower the viscosity and, consequently, to reduce the transistor response time. Finally, we were able to demonstrate a multifunctional device integrating the transistor logic function with that of energy storage in a supercapacitor: the TransCap. The polymer/electrolyte/carbon vertical stacking of the EG transistor features the cell configuration of a hybrid supercapacitor. Supercapacitors are high specific power systems that, for their ability to store/deliver charge within short times may outperform batteries in applications having high power demand. When the TransCap is ON (open transistor channel), the polymer and the carbon gate electrodes store charge (Q) at a given Vgs, hence the stored energy equals Q˙V gs. When the TransCap is switched OFF, the channel and the gate are discharged and the energy can be delivered back to power other electronic components. EG transistors, making use of activated carbon as gate electrode and different RTILs as well as RTIL solvent mixtures as electrolyte gating medium, are interesting towards low voltage printable electronics. The high capacitance at the interface between the electrolyte and the transistor channel enables energy storage within the EG transistor architecture.

Charge transport and trapping in organic field effect transistors exposed to polar analytes

NASA Astrophysics Data System (ADS)

Duarte, Davianne; Sharma, Deepak; Cobb, Brian; Dodabalapur, Ananth

2011-03-01

Pentacene based organic thin-film transistors were used to study the effects of polar analytes on charge transport and trapping behavior during vapor sensing. Three sets of devices with differing morphology and mobility (0.001-0.5 cm2/V s) were employed. All devices show enhanced trapping upon exposure to analyte molecules. The organic field effect transistors with different mobilities also provide evidence for morphology dependent partition coefficients. This study helps provide a physical basis for many reports on organic transistor based sensor response.

Base drive circuit

DOEpatents

Lange, Arnold C.

1995-01-01

An improved base drive circuit (10) having a level shifter (24) for providing bistable input signals to a pair of non-linear delays (30, 32). The non-linear delays (30, 32) provide gate control to a corresponding pair of field effect transistors (100, 106) through a corresponding pair of buffer components (88, 94). The non-linear delays (30, 32) provide delayed turn-on for each of the field effect transistors (100, 106) while an associated pair of transistors (72, 80) shunt the non-linear delays (30, 32) during turn-off of the associated field effect transistor (100, 106).

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

PubMed Central

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-01-01

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development. PMID:28350370

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.

PubMed

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-03-28

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development.

VO2-based radiative thermal transistor with a semi-transparent base

NASA Astrophysics Data System (ADS)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

2018-05-01

We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailoredmore » diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.« less

Failure rates for accelerated acceptance testing of silicon transistors

NASA Technical Reports Server (NTRS)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

PubMed

Cao, Xuan; Cao, Yu; Zhou, Chongwu

2016-01-26

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

PubMed

Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

2014-05-07

Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

Assessment of Phospohrene Field Effect Transistors

DTIC Science & Technology

2018-01-28

electronics industry. To this end, transistor test structures would initially be fabricated on phosphorene exfoliated from black phosphorus and, later, on...34Phosphorene FETs-Promising Transistors Based on a few Layers of Phosphorus Atoms," Nanjing Electronic Devices Institute, Nanjing, China, Jul. 2015...OH, Nov. 2015. J.C. M. Hwang, "Phosphorene Transistors-Transient or Lasting Electronics ?" Workshop Frontier Electronics , San Juan, PR, Dec. 2015

Oxide Based Transistor for Flexible Displays

DTIC Science & Technology

2014-09-15

thin film transistors (TFTs) for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the process...Box 12211 Research Triangle Park, NC 27709-2211 Thin film transistors , flexible electronics, RF sputtering, Transparent amorphous oxide semiconductors...NC A&T and RTI, International investigated In free GaSnZnO (GSZO) material system, as the active channel in thin film transistors (TFTs) for next

Power Supply Fault Tolerant Reliability Study

DTIC Science & Technology

1991-04-01

easier to design than for equivalent bipolar transistors. MCDONNELL DOUGLAS ELECTRONICS SYSTEMS COMPANY 9. Base circuitry should be designed to drive...SWITCHING REGULATORS (Ref. 28), SWITCHING AND LINEAR POWER SUPPLY DESIGN (Ref. 25) 6. Sequence the turn-off/turn-on logic in an orderly and controllable ...for equivalent bipolar transistors. MCDONNELL DOUGLAS ELECTRONICS SYSTEMS COMPANY 8. Base circuitry should be designed to drive the transistor into

Spin Coherence in Semiconductor Nanostructures

DTIC Science & Technology

2006-12-10

to the collector under the operating conditions of the unipolar spin transistor. This work has appeared in Journal of Applied Physics. (Left...Original proposal of the homojunction unipolar spin transistor, showing the dropping of the barrier for carriers to leak from base to collector ...Right) new proposal of the heterostructure unipolar spin transistor, showing that the barrier for majority carriers to leak from base to collector is

Local bipolar-transistor gain measurement for VLSI devices

NASA Astrophysics Data System (ADS)

Bonnaud, O.; Chante, J. P.

1981-08-01

A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the device in as small a region as possible. To reduce the size of the conducting area, a transversal reverse base current is forced through the base layer resistance in order to pinch in the emitter current in the illuminated region. Transistor gain is deduced from small signal measurements. A model associated with this technique is developed, and this is in agreement with the first experimental results.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

PubMed Central

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C. P.; Gelinck, Gerwin H.; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-01-01

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics. PMID:27762321

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-10-20

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

Efficient Multiplexer FPGA Block Structures Based on G4FETs

NASA Technical Reports Server (NTRS)

Vatan, Farrokh; Fijany, Amir

2009-01-01

Generic structures have been conceived for multiplexer blocks to be implemented in field-programmable gate arrays (FPGAs) based on four-gate field-effect transistors (G(sup 4)FETs). This concept is a contribution to the continuing development of digital logic circuits based on G4FETs and serves as a further demonstration that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. Results in this line of development at earlier stages were summarized in two previous NASA Tech Briefs articles: "G(sup 4)FETs as Universal and Programmable Logic Gates" (NPO-41698), Vol. 31, No. 7 (July 2007), page 44, and "Efficient G4FET-Based Logic Circuits" (NPO-44407), Vol. 32, No. 1 ( January 2008), page 38 . As described in the first-mentioned previous article, a G4FET can be made to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer components than are required for conventional transistor-based circuits performing the same logic functions. The second-mentioned previous article reported results of a comparative study of NOT-majority-gate (G(sup 4)FET)-based logic-circuit designs and equivalent NOR- and NAND-gate-based designs utilizing conventional transistors. [NOT gates (inverters) were also included, as needed, in both the G(sup 4)FET- and the NOR- and NAND-based designs.] In most of the cases studied, fewer logic gates (and, hence, fewer transistors), were required in the G(sup 4)FET-based designs. There are two popular categories of FPGA block structures or architectures: one based on multiplexers, the other based on lookup tables. In standard multiplexer- based architectures, the basic building block is a tree-like configuration of multiplexers, with possibly a few additional logic gates such as ANDs or ORs. Interconnections are realized by means of programmable switches that may connect the input terminals of a block to output terminals of other blocks, may bridge together some of the inputs, or may connect some of the input terminals to signal sources representing constant logical levels 0 or 1. The left part of the figure depicts a four-to-one G(sup 4)FET-based multiplexer tree; the right part of the figure depicts a functionally equivalent four-to-one multiplexer based on conventional transistors. The G(sup 4)FET version would contains 54 transistors; the conventional version contains 70 transistors.

Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors

DTIC Science & Technology

2017-02-10

AFRL-AFOSR-JP-TR-2017-0009 Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors Paul Dastoor UNIVERSITY OF...collection of information   if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1...Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-15-1-4002 5c.  PROGRAM ELEMENT

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Fedin, I. V.; Kutkov, I. V.

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping levelmore » makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.« less

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

p-Type Transparent Electronics

DTIC Science & Technology

2003-09-25

thin - film transistors (TTFTs) reported to date in the literature are summarized. 2.2.1 Thin - Film Transistor Structure and Fabrication A TFT ...is incapable of controlling the TFT regardless of gate voltage, as described in Sec. 2.2.3.1. 2.2.4 Transparent Thin - Film Transistors (TTFTs...Transparent thin - film transistors (TTFTs) described in the literature to date are all n-channel devices. Several n-channel TTFTs (n-TTFTs) based on

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2017-03-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

PubMed Central

Hu, C. Y.

2017-01-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks. PMID:28349960

VOLTAGE REGULATOR

DOEpatents

Von Eschen, R.L.; Scheele, P.F.

1962-04-24

A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

The woven fiber organic electrochemical transistors based on polypyrrole nanowires/reduced graphene oxide composites for glucose sensing.

PubMed

Wang, Yuedan; Qing, Xing; Zhou, Quan; Zhang, Yang; Liu, Qiongzhen; Liu, Ke; Wang, Wenwen; Li, Mufang; Lu, Zhentan; Chen, Yuanli; Wang, Dong

2017-09-15

Novel woven fiber organic electrochemical transistors based on polypyrrole (PPy) nanowires and reduced graphene oxide (rGO) have been prepared. SEM revealed that the introduction of rGO nanosheets could induce the growth and increase the amount of PPy nanowires. Moreover, it could enhance the electrical performance of fiber transistors. The hybrid transistors showed high on/off ratio of 10 2 , fast switch speed, and long cycling stability. The glucose sensors based on the fiber organic electrochemical transistors have also been investigated, which exhibited outstanding sensitivity, as high as 0.773 NCR/decade, with a response time as fast as 0.5s, a linear range of 1nM to 5μM, a low detection concentration as well as good repeatability. In addition, the glucose could be selectively detected in the presence of ascorbic acid and uric acid interferences. The reliability of the proposed glucose sensor was evaluated in real samples of rabbit blood. All the results indicate that the novel fiber transistors pave the way for portable and wearable electronics devices, which have a promising future for healthcare and biological applications. Copyright © 2017 Elsevier B.V. All rights reserved.

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

NASA Astrophysics Data System (ADS)

Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

2018-04-01

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives

NASA Astrophysics Data System (ADS)

Lehmann, Daniel; Zahn, Dietrich R. T.

2009-04-01

A comparison of the electrical characteristics of organic field-effect transistors (OFETs) based on derivatives of the electron-conductor perylene tetracarboxylic diimide (PTCDI) in top-contact configuration is presented. The derivatives used are N,N'-dimethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMe-PTCDI), N,N'-diphenyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiPhenyl-PTCDI), N,N'-dimethoxyethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMethoxyethyl-PTCDI), N,N'-di(3-pentyl)-3,4,9,10-perylene-tetracarboxylic-diimide (Di3Pentyl-PTCDI), and N,N'-diheptyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiHeptyl-PTCDI). Current/voltage measurements were first performed in situ and later ex situ. Additionally, the effect of annealing and bias stress was probed in situ. A strong influence of the different side groups on the order of magnitude of the electron mobility is revealed, ranging from 4×10-6 cm2/V s for DiMethoxyethyl-PTCDI to 5×10-2 cm2/V s for DiHeptyl-PTCDI. While none of the devices was stable in air after exposition to air, only the DiMe-PTCDI one resumed its functionality after restoring vacuum conditions. The dielectric functions of the derivatives was derived, additionally revealing optical isotropy for all films and varying surface roughness. While DiHeptyl-PTCDI and Di3Pentyl-PTCDI, yielding also the highest electron mobilities, form smooth layers with negligible surface roughness, strong island formation was be observed for DiPhenyl-PTCDI and DiMethoxyethyl-PTCDI, yielding low mobilities. This island growth was also confirmed by atomic force microscopy measurements. Ageing of the samples for several months under ambient conditions leads to increased roughness for the very rough samples. Layers with smooth surface, on the other hand, showed no significant change in the dielectric behavior of the sample.

A 10-kW series resonant converter design, transistor characterization, and base-drive optimization

NASA Technical Reports Server (NTRS)

Robson, R. R.; Hancock, D. J.

1982-01-01

The development, components, and performance of a transistor-based 10 kW series resonant converter for use in resonant circuits in space applications is described. The transistors serve to switch on the converter current, which has a half-sinusoid waveform when the transistor is in saturation. The goal of the program was to handle an input-output voltage range of 230-270 Vdc, an output voltage range of 200-500 Vdc, and a current limit range of 0-20 A. Testing procedures for the D60T and D7ST transistors are outlined and base drive waveforms are presented. The total device dissipation was minimized and found to be independent of the regenerative feedback ratio at lower current levels. Dissipation was set at within 10% and rise times were found to be acceptable. The finished unit displayed a 91% efficiency at full power levels of 500 V and 20 A and 93.7% at 500 V and 10 A.

Progress of new label-free techniques for biosensors: a review.

PubMed

Sang, Shengbo; Wang, Yajun; Feng, Qiliang; Wei, Ye; Ji, Jianlong; Zhang, Wendong

2016-01-01

The detection techniques used in biosensors can be broadly classified into label-based and label-free. Label-based detection relies on the specific properties of labels for detecting a particular target. In contrast, label-free detection is suitable for the target molecules that are not labeled or the screening of analytes which are not easy to tag. Also, more types of label-free biosensors have emerged with developments in biotechnology. The latest developed techniques in label-free biosensors, such as field-effect transistors-based biosensors including carbon nanotube field-effect transistor biosensors, graphene field-effect transistor biosensors and silicon nanowire field-effect transistor biosensors, magnetoelastic biosensors, optical-based biosensors, surface stress-based biosensors and other type of biosensors based on the nanotechnology are discussed. The sensing principles, configurations, sensing performance, applications, advantages and restriction of different label-free based biosensors are considered and discussed in this review. Most concepts included in this survey could certainly be applied to the development of this kind of biosensor in the future.

T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

PubMed

Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

2013-05-28

In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com; Choi, Won Kook; Materials and Life Science Research Division, Korea Institute of Science and Technology

We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS{sub 2} nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS{sub 2} transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without anymore » chemical damage.« less

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

NASA Astrophysics Data System (ADS)

Bartsch, S. T.; Rusu, A.; Ionescu, A. M.

2012-10-01

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne frequency down-conversion based on resistive FET mixing provides a loop feedback signal with high signal-to-noise ratio. We identify key parameters for PLL operation, and analyze the performance of the RB-FET at the system level. Used as resonant mass detector, the experimental frequency stability in the ppm-range translates into sub atto-gram (10-18 g) sensitivity in high vacuum. The feedback and control system are generic and may be extended to other mechanical resonators with transistor properties, such as graphene membranes and carbon nanotubes.

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizingmore » controllable high-performance stable transistors.« less

Electrophoretic and field-effect graphene for all-electrical DNA array technology.

PubMed

Xu, Guangyu; Abbott, Jeffrey; Qin, Ling; Yeung, Kitty Y M; Song, Yi; Yoon, Hosang; Kong, Jing; Ham, Donhee

2014-09-05

Field-effect transistor biomolecular sensors based on low-dimensional nanomaterials boast sensitivity, label-free operation and chip-scale construction. Chemical vapour deposition graphene is especially well suited for multiplexed electronic DNA array applications, since its large two-dimensional morphology readily lends itself to top-down fabrication of transistor arrays. Nonetheless, graphene field-effect transistor DNA sensors have been studied mainly at single-device level. Here we create, from chemical vapour deposition graphene, field-effect transistor arrays with two features representing steps towards multiplexed DNA arrays. First, a robust array yield--seven out of eight transistors--is achieved with a 100-fM sensitivity, on par with optical DNA microarrays and at least 10 times higher than prior chemical vapour deposition graphene transistor DNA sensors. Second, each graphene acts as an electrophoretic electrode for site-specific probe DNA immobilization, and performs subsequent site-specific detection of target DNA as a field-effect transistor. The use of graphene as both electrode and transistor suggests a path towards all-electrical multiplexed graphene DNA arrays.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-09-01

Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor behaviour in devices fabricated from chemically reduced graphene oxide. The work provided an important step forward for graphene electronics, which has been hampered by difficulties in scaling up the mechanical exfoliation techniques required to produce the high-quality graphene often needed for functioning devices [8]. In Sweden, researchers have developed a transistor design that they fabricate using standard III-V parallel processing, which also has great promise for scaling up production. Their transistor is based on a vertical array of InAs nanowires, which provide high electron mobility and the possibility of high-speed and low-power operation [9]. Different fabrication techniques and design parameters can influence the properties of transistors. Researchers in Belgium used a new method based on high-vacuum scanning spreading resistance microscopy to study the effect of diameter on carrier profile in nanowire transistors [10]. They then used experimental data and simulations to gain a better understanding of how this influenced the transistor performance. In Japan, Y Ohno and colleagues at Nagoya University have reported how atomic layer deposition of an insulating layer of HfO2 on carbon nanotube field effect transistors can change the carrier from p-type to n-type [11]. Carrier type switching—'ambipolar behaviour'—and hysteresis of carbon nanotube network transistors can make achieving reliable device performance challenging. However studies have also suggested that the hysteretic properties may be exploited in non-volatile memory applications. A collaboration of researchers in Italy and the US demonstrated transistor and memory cell behaviour in a system based on a carbon nanotube network [13]. Their device had relatively fast programming, good endurance and the charge retention was successfully enhanced by limiting exposure to air. Progress in understanding transistor behaviour has inspired other innovations in device applications. Nanowires are notoriously sensitive to gases such as CO, opening opportunities for applications in sensing using one-dimensional nanostructure transistors [12]. The pyroelectric transistor reported in this issue represents an intriguing development for device applications of this versatile and ubiquitous electronics component [3]. As the researchers point out, 'By combining the photocurrent feature and optothermal gating effect, the wide range of response to light covering ultraviolet and infrared radiation can lead to new nanoscale optoelectronic devices that are suitable for remote or wireless applications.' In nanotechnology research and development, often the race is on to achieve reliable device behaviour in the smallest possible systems. But sometimes it is the innovations in the approach used that revolutionize technology in industry. The pyroelectric transistor reported in this issue is a neat example of the ingenious innovations in this field of research. While in research the race is never really over, as this work demonstrates the journey itself remains an inspiration. References [1] Bardeen J and Brattain W H 1948 The transistor, a semi-conductor triode Phys. Rev 74 230-1 [2] Shockley W B, Bardeen J and Brattain W H 1956 The nobel prize in physics www.nobelprize.org/nobel_prizes/physics/laureates/1956/# [3] Hsieh C-Y, Lu M-L, Chen J-Y, Chen Y-T, Chen Y-F, Shih W Y and Shih W-H 2012 Single ZnO nanowire-PZT optothermal field effect transistors Nanotechnology 23 355201 [4] Tans S J, Verschueren A R M and Dekker C 1998 Room-temperature transistor based on a single carbon nanotube Nature 393 49-52 [5] Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2003 High performance silicon nanowire field effect transistors Nano Lett. 3 149-52 [6]Stafford C A, Cardamone D M and Mazumdar S 2007 The quantum interference effect transistor Nanotechnology 18 424014 [7] Garnier F, Hajlaoui R, Yassar A and Srivastava P 1994 All-polymer field-effect transistor realized by printing techniques Science 265 1684-6 [8] Joung D, Chunder A, Zhai L and Khondaker S I 2010 High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis Nanotechnology 21 165202 [9] Bryllert T, Wernersson L-E, L¨owgren T and Samuelson L 2006 Vertical wrap-gated nanowire transistors Nanotechnology 17 S227-30 [10] Schulze A et al 2011 Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology 22 185701 [11] Moriyama N, Ohno Y, Kitamura T, Kishimoto S and Mizutani T 2010 Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges Nanotechnology 21 165201 [12] Bartolomeo A D, Rinzan M, Boyd A K, Yang Y, Guadagno L, Giubileo F and Barbara P 2010 Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes Nanotechnology 21 115204 [13] Liao L et al 2009 Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors Nanotechnology 20 085203

Aqueous gating of van der Waals materials on bilayer nanopaper.

PubMed

Bao, Wenzhong; Fang, Zhiqiang; Wan, Jiayu; Dai, Jiaqi; Zhu, Hongli; Han, Xiaogang; Yang, Xiaofeng; Preston, Colin; Hu, Liangbing

2014-10-28

In this work, we report transistors made of van der Waals materials on a mesoporous paper with a smooth nanoscale surface. The aqueous transistor has a novel planar structure with source, drain, and gate electrodes on the same surface of the paper, while the mesoporous paper is used as an electrolyte reservoir. These transistors are enabled by an all-cellulose paper with nanofibrillated cellulose (NFC) on the top surface that leads to an excellent surface smoothness, while the rest of the microsized cellulose fibers can absorb electrolyte effectively. Based on two-dimensional van der Waals materials, including MoS2 and graphene, we demonstrate high-performance transistors with a large on-off ratio and low subthreshold swing. Such planar transistors with absorbed electrolyte gating can be used as sensors integrated with other components to form paper microfluidic systems. This study is significant for future paper-based electronics and biosensors.

Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ning; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Hui Liu, Yang

2015-02-16

The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors.

A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumitru, L. M.; Manoli, K.; Magliulo, M.

2015-01-01

A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

Electrical coupling of single cardiac rat myocytes to field-effect and bipolar transistors.

PubMed

Kind, Thomas; Issing, Matthias; Arnold, Rüdiger; Müller, Bernt

2002-12-01

A novel bipolar transistor for extracellular recording the electrical activity of biological cells is presented, and the electrical behavior compared with the field-effect transistor (FET). Electrical coupling is examined between single cells separated from the heart of adults rats (cardiac myocytes) and both types of transistors. To initiate a local extracellular voltage, the cells are periodically stimulated by a patch pipette in voltage clamp and current clamp mode. The local extracellular voltage is measured by the planar integrated electronic sensors: the bipolar and the FET. The small signal transistor currents correspond to the local extracellular voltage. The two types of sensor transistors used here were developed and manufactured in the laboratory of our institute. The manufacturing process and the interfaces between myocytes and transistors are described. The recordings are interpreted by way of simulation based on the point-contact model and the single cardiac myocyte model.

Ultra-high gain diffusion-driven organic transistor.

PubMed

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Ultra-high gain diffusion-driven organic transistor

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Monolithic acoustic graphene transistors based on lithium niobate thin film

NASA Astrophysics Data System (ADS)

Liang, J.; Liu, B.-H.; Zhang, H.-X.; Zhang, H.; Zhang, M.-L.; Zhang, D.-H.; Pang, W.

2018-05-01

This paper introduces an on-chip acoustic graphene transistor based on lithium niobate thin film. The graphene transistor is embedded in a microelectromechanical systems (MEMS) acoustic wave device, and surface acoustic waves generated by the resonator induce a macroscopic current in the graphene due to the acousto-electric (AE) effect. The acoustic resonator and the graphene share the lithium niobate film, and a gate voltage is applied through the back side of the silicon substrate. The AE current induced by the Rayleigh and Sezawa modes was investigated, and the transistor outputs a larger current in the Rayleigh mode because of a larger coupling to velocity ratio. The output current increases linearly with the input radiofrequency power and can be effectively modulated by the gate voltage. The acoustic graphene transistor realized a five-fold enhancement in the output current at an optimum gate voltage, outperforming its counterpart with a DC input. The acoustic graphene transistor demonstrates a paradigm for more-than-Moore technology. By combining the benefits of MEMS and graphene circuits, it opens an avenue for various system-on-chip applications.

A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

2017-04-01

In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

NASA Astrophysics Data System (ADS)

Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

2012-10-01

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

Molecular thermal transistor: Dimension analysis and mechanism

NASA Astrophysics Data System (ADS)

Behnia, S.; Panahinia, R.

2018-04-01

Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puzanov, A. S.; Obolenskiy, S. V., E-mail: obolensk@rf.unn.ru; Kozlov, V. A.

We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

High-mobility pyrene-based semiconductor for organic thin-film transistors.

PubMed

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Jin Yu; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor inmore » series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.« less

Stable room temperature magnetocurrent in electrodeposited permeable n-type metal base transistor

NASA Astrophysics Data System (ADS)

Silva, G. V. O.; Teixeira, H. A.; Mello, S. L. A.; de Araujo, C. I. L.

2018-02-01

We investigated a permeable metal base transistor consisting of a ZnO/NiFe/Si heterostructure. Both ZnO and NiFe layers were grown by electrodeposition techniques, using only adhesive tape masks to define deposition regions. The base permeability can thus be controlled by varying the NiFe deposition time. We report here our best results obtained for the permeable NiFe base close to the electrical percolation threshold, which gives reasonable sensitivity to the device. Magnetocurrent measurements carried out at room temperature show that this permeable metal base transistor is stable and sensitive under applied magnetic fields of low intensities, ˜100 Oe, required for electronics integration.

High speed capacitor-inverter based carbon nanotube full adder.

PubMed

Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

2010-03-18

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

Polymer-based doping control for performance enhancement of wet-processed short-channel CNTFETs

NASA Astrophysics Data System (ADS)

Hartmann, Martin; Schubel, René; Claus, Martin; Jordan, Rainer; Schulz, Stefan E.; Hermann, Sascha

2018-01-01

The electrical transport properties of short-channel transistors based on single-walled carbon nanotubes (CNT) are significantly affected by bundling along with solution processing. We report that especially high off currents of CNT transistors are not only related to the incorporation of metallic CNTs but also to the incorporation of CNT bundles. By applying device passivation with poly(4-vinylpyridine), the impact of CNT bundling on the device performance can be strongly reduced due to increased gate efficiency as well as reduced oxygen and water-induced p-type doping, boosting essential field-effect transistor performance parameters by several orders of magnitude. Moreover, this passivation approach allows the hysteresis and threshold voltage of CNT transistors to be tuned.

A steep-slope transistor based on abrupt electronic phase transition

NASA Astrophysics Data System (ADS)

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-01

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (`sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

A steep-slope transistor based on abrupt electronic phase transition.

PubMed

Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-07

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Design considerations for FET-gated power transistors

NASA Technical Reports Server (NTRS)

Chen, D. Y.; Chin, S. A.

1983-01-01

An FET-bipolar combinational power transistor configuration (tested up to 300 V, 20 A at 100 kHz) is described. The critical parameters for integrating the chips in hybrid form are examined, and an effort to optimize the overall characteristics of the configuration is discussed. Chip considerations are examined with respect to the voltage and current rating of individual chips, the FET surge capability, the choice of triple diffused transistor or epitaxial transistor for the bipolar element, the current tailing effect, and the implementation of the bipolar transistor and an FET as single chip or separate chips. Package considerations are discussed with respect to package material and geometry, surge current capability of bipolar base terminal bonding, and power losses distribution.

Mixed protonic and electronic conductors hybrid oxide synaptic transistors

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Zhu, Li Qiang; Wen, Juan; Xiao, Hui; Liu, Rui

2017-05-01

Mixed ionic and electronic conductor hybrid devices have attracted widespread attention in the field of brain-inspired neuromorphic systems. Here, mixed protonic and electronic conductor (MPEC) hybrid indium-tungsten-oxide (IWO) synaptic transistors gated by nanogranular phosphorosilicate glass (PSG) based electrolytes were obtained. Unique field-configurable proton self-modulation behaviors were observed on the MPEC hybrid transistor with extremely strong interfacial electric-double-layer effects. Temporally coupled synaptic plasticities were demonstrated on the MPEC hybrid IWO synaptic transistor, including depolarization/hyperpolarization, synaptic facilitation and depression, facilitation-stead/depression-stead behaviors, spiking rate dependent plasticity, and high-pass/low-pass synaptic filtering behaviors. MPEC hybrid synaptic transistors may find potential applications in neuron-inspired platforms.

Organic Electronics: An El Dorado in the Quest of New Photocatalysts for Polymerization Reactions.

PubMed

Dumur, Frédéric; Gigmes, Didier; Fouassier, Jean-Pierre; Lalevée, Jacques

2016-09-20

Photoinitiated polymerization has been the subject of continued research efforts due to the numerous applications in which this polymerization technique is involved (coatings, inks, adhesives, optoelectronic, laser imaging, stereolithography, nanotechnology, etc.). More recently, photopolymerization has received renewed interest due to the emergence of 3D-printing technologies. However, despite current academic and industrial interest in photopolymerization methodologies, a major limitation lies in the slow rates of photopolymerization. The development of new photoinitiating systems aimed at addressing this limitation is an active area of research. Photopolymerization occurs through the exposure of a curable formulation to light, generating radical and/or cationic species to initiate polymerization. At present, photopolymerization is facing numerous challenges related to safety, economic and ecological concerns. Furthermore, practical considerations such as the curing depth and the competition for light absorption between the chromophores and other species in the formulation are key parameters drastically affecting the photopolymerization process. To address these issues, photoinitiating systems operating under low intensity visible light irradiation, in the absence of solvents are highly sought after. In this context, the use of photoredox catalysis can be highly advantageous; that is, photoredox catalysts can provide high reactivities with low catalyst loading, permitting access to high performance photoinitiating systems. However, to act as efficient photoredox catalysts, specific criteria have to be fulfilled. A strong absorption over the visible range, an ability to easily oxidize or reduce as well as sufficient photochemical stability are basic prerequisites to make these molecules desirable candidates for photoredox catalysis. Considering the similarity of requirements between organic electronics and photopolymerization, numerous materials initially designed for applications in organic electronics have been revisited in the context of photopolymerization. Organic electronics is a branch of electronics and materials science focusing on the development of semiconductors devoted to three main research fields; organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic solar cells (OSCs). The contribution of organic electronics to the field of electronics is important as it paves the way toward cheaper, lighter, and more energy efficient devices. In the present context of photopolymerization, materials that were investigated as photocatalysts were indifferently organic semiconductors used for transistors, charge-transport materials, and light-emitting materials used in electroluminescent devices or conjugated polymers and small molecule dyes for solar cells. In this Account, we summarize our latest developments in elaborating on photocatalytic systems based on these new classes of compounds. Through an in-depth understanding of the parameters governing their reactivities and our efforts to incorporate these materials into photoinitiating systems, we provide new knowledge and a valuable insight for future prospects.

Graphene-based field-effect transistor biosensors

DOEpatents

Chen; , Junhong; Mao, Shun; Lu, Ganhua

2017-06-14

The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Ultra-high gain diffusion-driven organic transistor

PubMed Central

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-01-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

PubMed

Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

2014-06-13

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

PubMed

She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

2017-02-01

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microcrystalline silicon thin-film transistors for large area electronic applications

NASA Astrophysics Data System (ADS)

Chan, Kah-Yoong; Bunte, Eerke; Knipp, Dietmar; Stiebig, Helmut

2007-11-01

Thin-film transistors (TFTs) based on microcrystalline silicon (µc-Si:H) exhibit high charge carrier mobilities exceeding 35 cm2 V-1 s-1. The devices are fabricated by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 °C. The fabrication process of the µc-Si:H TFTs is similar to the low temperature fabrication of amorphous silicon TFTs. The electrical characteristics of the µc-Si:H-based transistors will be presented. As the device charge carrier mobility of short channel TFTs is limited by the contacts, the influence of the drain and source contacts on the device parameters including the device charge carrier mobility and the device threshold voltage will be discussed. The experimental data will be described by a modified standard transistor model which accounts for the contact effects. Furthermore, the transmission line method was used to extract the device parameters including the contact resistance. The modified standard transistor model and the transmission line method will be compared in terms of the extracted device parameters and contact resistances.

Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

PubMed Central

Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

2015-01-01

Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays. PMID:26173436

Quantum Optical Transistor and Other Devices Based on Nanostructures

NASA Astrophysics Data System (ADS)

Li, Jin-Jin; Zhu, Ka-Di

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to nanostructures. This provides an important clue toward the realization of quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful transfer efficiency. Under the radiation of a strong pump laser, a signal laser can be amplified or attenuated via passing through a single quantum dot coupled to a photonic crystal (PC) nanocavity system. Such a switching and amplifying behavior can really implement the quantum optical transistor. By simply turning on or off the input pump laser, the amplified or attenuated signal laser can be obtained immediately. Based on this transistor, we further propose a method to measure the vacuum Rabi splitting of exciton in all-optical domain. Besides, we study the light propagation in a coupled QD and nanomechanical resonator (NR) system. We demonstrate that it is possible to achieve the slow light, fast light, and quantum memory for light on demand, which is based on the mechanically induced coherent population oscillation (MICPO) and exciton polaritons. These QD devices offer a route toward the use of all-optical technique to investigate the coupled QD systems and will make contributions to quantum internets and quantum computers.

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, M.; Iverson, E. W.; Wang, C. Y.

2015-11-02

For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.

The Design of Fault Tolerant Quantum Dot Cellular Automata Based Logic

NASA Technical Reports Server (NTRS)

Armstrong, C. Duane; Humphreys, William M.; Fijany, Amir

2002-01-01

As transistor geometries are reduced, quantum effects begin to dominate device performance. At some point, transistors cease to have the properties that make them useful computational components. New computing elements must be developed in order to keep pace with Moore s Law. Quantum dot cellular automata (QCA) represent an alternative paradigm to transistor-based logic. QCA architectures that are robust to manufacturing tolerances and defects must be developed. We are developing software that allows the exploration of fault tolerant QCA gate architectures by automating the specification, simulation, analysis and documentation processes.

Detection of glutamate and acetylcholine with organic electrochemical transistors based on conducting polymer/platinum nanoparticle composites.

PubMed

Kergoat, Loïg; Piro, Benoît; Simon, Daniel T; Pham, Minh-Chau; Noël, Vincent; Berggren, Magnus

2014-08-27

The aim of the study is to open a new scope for organic electrochemical transistors based on PEDOT:PSS, a material blend known for its stability and reliability. These devices can leverage molecular electrocatalysis by incorporating small amounts of nano-catalyst during the transistor manufacturing (spin coating). This methodology is very simple to implement using the know-how of nanochemistry and results in efficient enzymatic activity transduction, in this case utilizing choline oxidase and glutamate oxidase. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coulomb-coupled quantum-dot thermal transistors

NASA Astrophysics Data System (ADS)

Zhang, Yanchao; Yang, Zhimin; Zhang, Xin; Lin, Bihong; Lin, Guoxing; Chen, Jincan

2018-04-01

A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to the respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the temperature of the base. It is found that a small change in the base heat flow can induce a large heat flow change in the collector and emitter. The huge amplification factor can be obtained by optimizing the Coulomb interaction between the collector and the emitter or by decreasing the tunneling rate at the base. The proposed quantum-dot thermal transistor may open up potential applications in low-temperature solid-state thermal circuits at the nanoscale.

Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-14

ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10more » times smaller than existing chargers.« less

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

PubMed

Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

2016-04-20

In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

Organic transistors manufactured using inkjet technology with subfemtoliter accuracy

PubMed Central

Sekitani, Tsuyoshi; Noguchi, Yoshiaki; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2008-01-01

A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages. PMID:18362348

MMIC DHBT Common-Base Amplifier for 172 GHz

NASA Technical Reports Server (NTRS)

Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

2006-01-01

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

PubMed

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

DTIC Science & Technology

2010-02-02

pf a- IGZO TFTs. IV. RF Characteristics of Room Temperature Deposited Indium Zinc Oxide Thin - Film Transistors Depletion-mode indium zinc...III. High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated On Polyethylene Terephthalate Substrates High-performance...amorphous (a-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate (PET) substrates coated with indium

Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions

DTIC Science & Technology

2007-08-01

ohmic contacts to ZnO , UV photoconductors, and thin film transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated... transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated, as a potential means of locally inverting ZnO to p-type, and to...low contact resistivity ......................... 8 ZnO Thin Film Transistors

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

N Channel JFET Based Digital Logic Gate Structure

NASA Technical Reports Server (NTRS)

Krasowski, Michael J (Inventor)

2013-01-01

An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications

NASA Astrophysics Data System (ADS)

Cao, Jingchen; Peng, Songang; Liu, Wei; Wu, Quantan; Li, Ling; Geng, Di; Yang, Guanhua; Ji, Zhouyu; Lu, Nianduan; Liu, Ming

2018-02-01

We present a continuous surface-potential-based compact model for molybdenum disulfide (MoS2) field effect transistors based on the multiple trapping release theory and the variable-range hopping theory. We also built contact resistance and velocity saturation models based on the analytical surface potential. This model is verified with experimental data and is able to accurately predict the temperature dependent behavior of the MoS2 field effect transistor. Our compact model is coded in Verilog-A, which can be implemented in a computer-aided design environment. Finally, we carried out an active matrix display simulation, which suggested that the proposed model can be successfully applied to circuit design.

Development of ion implanted gallium arsenide transistors

NASA Technical Reports Server (NTRS)

Hunsperger, R.; Baron, R.

1972-01-01

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Thin-film transistors based on poly(3,3‴-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

NASA Astrophysics Data System (ADS)

Vieira, Sara M. C.; Hsieh, Gen-Wen; Unalan, Husnu E.; Dag, Sefa; Amaratunga, Gehan A. J.; Milne, William I.

2011-03-01

The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly(3,3‴-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2×10-4 cm2/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3×10-5 cm2/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

PubMed

Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2012-06-13

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Quantum engineering of transistors based on 2D materials heterostructures

NASA Astrophysics Data System (ADS)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Quantum engineering of transistors based on 2D materials heterostructures.

PubMed

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

High temperature bias line stabilized current sources

DOEpatents

Patterson, III, Raymond B.

1984-01-01

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.

High temperature bias line stabilized current sources

DOEpatents

Patterson, R.B. III.

1984-09-11

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower. 1 fig.

Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.

PubMed

Beev, Nikolai; Kiviranta, Mikko

2012-06-01

Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

NASA Astrophysics Data System (ADS)

Fortunato, G.; Mariucci, L.; Cuscunà, M.; Privitera, V.; La Magna, A.; Spinella, C.; Magrı, A.; Camalleri, M.; Salinas, D.; Simon, F.; Svensson, B.; Monakhov, E.

2006-12-01

An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor (MOS) transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

PubMed

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

PubMed

Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

2015-01-14

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

PubMed

Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

2014-02-28

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

PubMed

Nazir, Ghazanfar; Khan, Muhammad Farooq; Aftab, Sikandar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Rehman, Malik Abdul; Seo, Yongho; Eom, Jonghwa

2017-12-28

Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (R vert ) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (R planar ) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for various thicknesses of MoS₂ channels in both vertical and lateral transistors. As the thickness of MoS₂ increases, R vert increases, but R planar decreases. The increase of R vert in the thicker MoS₂ film is attributed to the interlayer resistance in the vertical direction. However, R planar shows a lower value for a thicker MoS₂ film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

65nm OPC and design optimization by using simple electrical transistor simulation

NASA Astrophysics Data System (ADS)

Trouiller, Yorick; Devoivre, Thierry; Belledent, Jerome; Foussadier, Franck; Borjon, Amandine; Patterson, Kyle; Lucas, Kevin; Couderc, Christophe; Sundermann, Frank; Urbani, Jean-Christophe; Baron, Stanislas; Rody, Yves; Chapon, Jean-Damien; Arnaud, Franck; Entradas, Jorge

2005-05-01

In the context of 65nm logic technology where gate CD control budget requirements are below 5nm, it is mandatory to properly quantify the impact of the 2D effects on the electrical behavior of the transistor [1,2]. This study uses the following sequence to estimate the impact on transistor performance: 1) A lithographic simulation is performed after OPC (Optical Proximity Correction) of active and poly using a calibrated model at best conditions. Some extrapolation of this model can also be used to assess marginalities due to process window (focus, dose, mask errors, and overlay). In our case study, we mainly checked the poly to active misalignment effects. 2) Electrical behavior of the transistor (Ion, Ioff, Vt) is calculated based on a derivative spice model using the simulated image of the gate as an input. In most of the cases Ion analysis, rather than Vt or leakage, gives sufficient information for patterning optimization. We have demonstrated the benefit of this approach with two different examples: -design rule trade-off : we estimated the impact with and without misalignment of critical rules like poly corner to active distance, active corner to poly distance or minimum space between small transistor and big transistor. -Library standard cell debugging: we applied this methodology to the most critical one hundred transistors of our standard cell libraries and calculate Ion behavior with and without misalignment between active and poly. We compared two scanner illumination modes and two OPC versions based on the behavior of the one hundred transistors. We were able to see the benefits of one illumination, and also the improvement in the OPC maturity.

Design of a Multi-Level/Analog Ferroelectric Memory Device

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2006-01-01

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

PubMed

Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

2010-10-01

A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

PubMed

Park, Rebecca Sejung; Shulaker, Max Marcel; Hills, Gage; Suriyasena Liyanage, Luckshitha; Lee, Seunghyun; Tang, Alvin; Mitra, Subhasish; Wong, H-S Philip

2016-04-26

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors.

PubMed

Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

2012-10-24

Composite films of pentacene and a series of azobenzene derivatives are prepared and used as the active channel material in top-contact, bottom-gate field-effect transistors. The transistors exhibit high field-effect mobility as well as large I-V hysteresis as a function of the gate bias history. The azobenzene moieties, incorporated either in the form of self-assembled monolayer or discrete multilayer clusters at the dielectric surface, result in electric bistability of the pentacene-based transistor either by photoexcitation or gate biasing. The direction of threshold voltage shifts, size of hysteresis, response time, and retention characteristics all strongly depend on the substituent on the benzene ring. The results show that introducing a monolayer of azobenzene moieties results in formation of charge carrier traps responsible for slower switching between the bistable states and longer retention time. With clusters of azobenzene moieties as the trap sites, the switching is faster but the retention is shorter. Detailed film structure analyses and correlation with the transistor/memory properties of these devices are provided.

Aqueous Processing for Printed Organic Electronics: Conjugated Polymers with Multistage Cleavable Side Chains

PubMed Central

2017-01-01

The ability to process conjugated polymers via aqueous solution is highly advantageous for reducing the costs and environmental hazards of large scale roll-to-roll processing of organic electronics. However, maintaining competitive electronic properties while achieving aqueous solubility is difficult for several reasons: (1) Materials with polar functional groups that provide aqueous solubility can be difficult to purify and characterize, (2) many traditional coupling and polymerization reactions cannot be performed in aqueous solution, and (3) ionic groups, though useful for obtaining aqueous solubility, can lead to a loss of solid-state order, as well as a screening of any applied bias. As an alternative, we report a multistage cleavable side chain method that combines desirable aqueous processing attributes without sacrificing semiconducting capabilities. Through the attachment of cleavable side chains, conjugated polymers have for the first time been synthesized, characterized, and purified in organic solvents, converted to a water-soluble form for aqueous processing, and brought through a final treatment to cleave the polymer side chains and leave behind the desired electronic material as a solvent-resistant film. Specifically, we demonstrate an organic soluble polythiophene that is converted to an aqueous soluble polyelectrolyte via hydrolysis. After blade coating from an aqueous solution, UV irradiation is used to cleave the polymer’s side chains, resulting in a solvent-resistant, electroactive polymer thin film. In application, this process results in aqueous printed materials with utility for solid-state charge transport in organic field effect transistors (OFETs), along with red to colorless electrochromism in ionic media for color changing displays, demonstrating its potential as a universal method for aqueous printing in organic electronics. PMID:28979937

Thermoelectric transport properties of high mobility organic semiconductors

NASA Astrophysics Data System (ADS)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states within these materials. 2, 3

π-π Interaction among violanthrone molecules: observation, enhancement, and resulting charge transport properties.

PubMed

Shi, Min-Min; Chen, Yi; Nan, Ya-Xiong; Ling, Jun; Zuo, Li-Jian; Qiu, Wei-Ming; Wang, Mang; Chen, Hong-Zheng

2011-02-03

To investigate the relationship between π-π stacking and charge transport property of organic semiconductors, a highly soluble violanthrone derivative, 16,17-bis(2-ethylhexyloxy)anthra[9,1,2-cde-]benzo[rst]pentaphene-5,10-dione (3), is designed and synthesized. The π-π stacking behavior and the aggregation of compound 3 in both solution and thin film were studied in detail by (1)H nuclear magnetic resonance (NMR) spectroscopy, ultraviolet-visible (UV-vis) absorption, X-ray diffraction (XRD), and atomic force microscopy (AFM). When (1)H NMR spectroscopy and theoretical modeling results were combined, the arrangements of compound 3 molecules in the aggregates are demonstrated, where the dipole moments of the two adjacent molecules are nearly reversed to achieve efficient intermolecular π-π overlapping. Furthermore, it is interesting to find that the π-π stacking of compound 3, in both solution and thin films, can be enhanced by introducing a poor solvent n-hexane into the dilute chloroform solution. The resulting film exhibits more red-shifted absorption and higher crystallinity than the film made from pure chloroform solvent, suggesting that π-π interactions in the solid state are intensified by the poor solvent. Organic field-effect transistors (OFETs) with compound 3 film as the transportation layer were fabricated. It is disclosed that the compound 3 film obtained from the chloroform/n-hexane mixed solvents exhibits 1 order of magnitude higher hole mobility than that from the pure chloroform solvent because of the enhanced π-π interactions and the higher crystallinity in the former film. This work provided us valuable information in the improvement of electronic and optoelectronic performances of organic semiconductors by tuning their aggregate structures.

Aqueous Processing for Printed Organic Electronics: Conjugated Polymers with Multistage Cleavable Side Chains.

PubMed

Schmatz, Brian; Yuan, Zhibo; Lang, Augustus W; Hernandez, Jeff L; Reichmanis, Elsa; Reynolds, John R

2017-09-27

The ability to process conjugated polymers via aqueous solution is highly advantageous for reducing the costs and environmental hazards of large scale roll-to-roll processing of organic electronics. However, maintaining competitive electronic properties while achieving aqueous solubility is difficult for several reasons: (1) Materials with polar functional groups that provide aqueous solubility can be difficult to purify and characterize, (2) many traditional coupling and polymerization reactions cannot be performed in aqueous solution, and (3) ionic groups, though useful for obtaining aqueous solubility, can lead to a loss of solid-state order, as well as a screening of any applied bias. As an alternative, we report a multistage cleavable side chain method that combines desirable aqueous processing attributes without sacrificing semiconducting capabilities. Through the attachment of cleavable side chains, conjugated polymers have for the first time been synthesized, characterized, and purified in organic solvents, converted to a water-soluble form for aqueous processing, and brought through a final treatment to cleave the polymer side chains and leave behind the desired electronic material as a solvent-resistant film. Specifically, we demonstrate an organic soluble polythiophene that is converted to an aqueous soluble polyelectrolyte via hydrolysis. After blade coating from an aqueous solution, UV irradiation is used to cleave the polymer's side chains, resulting in a solvent-resistant, electroactive polymer thin film. In application, this process results in aqueous printed materials with utility for solid-state charge transport in organic field effect transistors (OFETs), along with red to colorless electrochromism in ionic media for color changing displays, demonstrating its potential as a universal method for aqueous printing in organic electronics.

High-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical interference.

PubMed

Huang, Yingyan; Ho, Seng-Tiong

2008-10-13

We show that a photonic transistor device can be realized via the manipulation of optical interference by optically controlled gain or absorption in novel ways, resulting in efficient transistor signal gain and switching action. Exemplary devices illustrate two complementary device types with high operating speed, microm size, microW switching power, and switching gain. They can act in tandem to provide a wide variety of operations including wavelength conversion, pulse regeneration, and logical operations. These devices could have a Transistor Figure-of-Merits >10(5) times higher than current chi((3)) approaches and are highly attractive.

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puczkarski, Paweł; Gehring, Pascal, E-mail: pascal.gehring@materials.ox.ac.uk; Lau, Chit S.

2015-09-28

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

The resonant body transistor.

PubMed

Weinstein, Dana; Bhave, Sunil A

2010-04-14

This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achieves >10 GHz frequencies and can be integrated into a standard CMOS process for on-chip clock generation, high-Q microwave circuits, fundamental quantum-state preparation and observation, and high-sensitivity measurements. An 11.7 GHz bulk-mode RBT is demonstrated with a quality factor Q of 1830, marking the highest frequency acoustic resonance measured to date on a silicon wafer.

Mode tunable p-type Si nanowire transistor based zero drive load logic inverter.

PubMed

Moon, Kyeong-Ju; Lee, Tae-Il; Lee, Sang-Hoon; Han, Young-Uk; Ham, Moon-Ho; Myoung, Jae-Min

2012-07-25

A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V(DD) of -20 V was successfully fabricated on a substrate.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

PubMed

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Developing Low-Noise GaAs JFETs For Cryogenic Operation

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.

1995-01-01

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

Solid-state X-band Combiner Study

NASA Technical Reports Server (NTRS)

Pitzalis, O., Jr.; Russell, K. J.

1979-01-01

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

Simultaneous surface and depth neural activity recording with graphene transistor-based dual-modality probes.

PubMed

Du, Mingde; Xu, Xianchen; Yang, Long; Guo, Yichuan; Guan, Shouliang; Shi, Jidong; Wang, Jinfen; Fang, Ying

2018-05-15

Subdural surface and penetrating depth probes are widely applied to record neural activities from the cortical surface and intracortical locations of the brain, respectively. Simultaneous surface and depth neural activity recording is essential to understand the linkage between the two modalities. Here, we develop flexible dual-modality neural probes based on graphene transistors. The neural probes exhibit stable electrical performance even under 90° bending because of the excellent mechanical properties of graphene, and thus allow multi-site recording from the subdural surface of rat cortex. In addition, finite element analysis was carried out to investigate the mechanical interactions between probe and cortex tissue during intracortical implantation. Based on the simulation results, a sharp tip angle of π/6 was chosen to facilitate tissue penetration of the neural probes. Accordingly, the graphene transistor-based dual-modality neural probes have been successfully applied for simultaneous surface and depth recording of epileptiform activity of rat brain in vivo. Our results show that graphene transistor-based dual-modality neural probes can serve as a facile and versatile tool to study tempo-spatial patterns of neural activities. Copyright © 2018 Elsevier B.V. All rights reserved.

DIRECT COUPLED AMPLIFIER

DOEpatents

Dandl, R.A.

1961-09-19

A transistor amplifier is designed for vyery small currents below 10/sup -8/ amperes. The filrst and second amplifier stages use unusual selected transistors in which the current amplification increases markedly for values of base current below 10/sup -6/ amperes.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics on Flexible Substrates

PubMed Central

Tetzner, Kornelius; Bose, Indranil R.; Bock, Karlheinz

2014-01-01

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor. PMID:28788243

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

PubMed

Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

2018-03-06

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnO{sub x}–Al{sub 2}O{sub 3} thin film structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H. K.; Chen, T. P., E-mail: echentp@ntu.edu.sg; Liu, P.

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al{sub 2}O{sub 3}) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al{submore » 2}O{sub 3} interface and/or in the Al{sub 2}O{sub 3} layer.« less

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Flexible active-matrix displays and shift registers based on solution-processed organic transistors.

PubMed

Gelinck, Gerwin H; Huitema, H Edzer A; van Veenendaal, Erik; Cantatore, Eugenio; Schrijnemakers, Laurens; van der Putten, Jan B P H; Geuns, Tom C T; Beenhakkers, Monique; Giesbers, Jacobus B; Huisman, Bart-Hendrik; Meijer, Eduard J; Benito, Estrella Mena; Touwslager, Fred J; Marsman, Albert W; van Rens, Bas J E; de Leeuw, Dago M

2004-02-01

At present, flexible displays are an important focus of research. Further development of large, flexible displays requires a cost-effective manufacturing process for the active-matrix backplane, which contains one transistor per pixel. One way to further reduce costs is to integrate (part of) the display drive circuitry, such as row shift registers, directly on the display substrate. Here, we demonstrate flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-microm-thick polyimide substrates. The displays can be bent to a radius of 1 cm without significant loss in performance. Using the same process flow we prepared row shift registers. With 1,888 transistors, these are the largest organic integrated circuits reported to date. More importantly, the operating frequency of 5 kHz is sufficiently high to allow integration with the display operating at video speed. This work therefore represents a major step towards 'system-on-plastic'.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates.

PubMed

Tetzner, Kornelius; Bose, Indranil R; Bock, Karlheinz

2014-10-29

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.

Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

Push-pull converter with energy saving circuit for protecting switching transistors from peak power stress

NASA Technical Reports Server (NTRS)

Mclyman, W. T. (Inventor)

1981-01-01

In a push-pull converter, switching transistors are protected from peak power stresses by a separate snubber circuit in parallel with each comprising a capacitor and an inductor in series, and a diode in parallel with the inductor. The diode is connected to conduct current of the same polarity as the base-emitter juction of the transistor so that energy stored in the capacitor while the transistor is switched off, to protect it against peak power stress, discharges through the inductor when the transistor is turned on, and after the capacitor is discharges through the diode. To return this energy to the power supply, or to utilize this energy in some external circuit, the inductor may be replaced by a transformer having its secondary winding connected to the power supply or to the external circuit.

High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

NASA Astrophysics Data System (ADS)

Minato, Hiroya; Fujiwara, Kohei; Tsukazaki, Atsushi

2018-05-01

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors for large-signal applications

NASA Astrophysics Data System (ADS)

Chen, J.; Gao, G. B.; Ünlü, M. S.; Morkoç, H.

1991-11-01

High-frequency ic- vce output characteristics of bipolar transistors, derived from calculated device cutoff frequencies, are reported. The generation of high-frequency output characteristics from device design specifications represents a novel bridge between microwave circuit design and device design: the microwave performance of simulated device structures can be analyzed, or tailored transistor device structures can be designed to fit specific circuit applications. The details of our compact transistor model are presented, highlighting the high-current base-widening (Kirk) effect. The derivation of the output characteristics from the modeled cutoff frequencies are then presented, and the computed characteristics of an AlGaAs/GaAs heterojunction bipolar transistor operating at 10 GHz are analyzed. Applying the derived output characteristics to microwave circuit design, we examine large-signal class A and class B amplification.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

Nanoneedle transistor-based sensors for the selective detection of intracellular calcium ions.

PubMed

Son, Donghee; Park, Sung Young; Kim, Byeongju; Koh, Jun Tae; Kim, Tae Hyun; An, Sangmin; Jang, Doyoung; Kim, Gyu Tae; Jhe, Wonho; Hong, Seunghun

2011-05-24

We developed a nanoneedle transistor-based sensor (NTS) for the selective detection of calcium ions inside a living cell. In this work, a single-walled carbon nanotube-based field effect transistor (swCNT-FET) was first fabricated at the end of a glass nanopipette and functionalized with Fluo-4-AM probe dye. The selective binding of calcium ions onto the dye molecules altered the charge state of the dye molecules, resulting in the change of the source-drain current of the swCNT-FET as well as the fluorescence intensity from the dye. We demonstrated the electrical and fluorescence detection of the concentration change of intracellular calcium ions inside a HeLa cell using the NTS.

Graphene Field Effect Transistor for Radiation Detection

NASA Technical Reports Server (NTRS)

Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

2016-01-01

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Going ballistic: Graphene hot electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

2015-12-01

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

A photonic transistor device based on photons and phonons in a cavity electromechanical system

NASA Astrophysics Data System (ADS)

Jiang, Cheng; Zhu, Ka-Di

2013-01-01

We present a scheme for photonic transistors based on photons and phonons in a cavity electromechanical system, which is composed of a superconducting microwave cavity coupled to a nanomechanical resonator. Control of the propagation of photons is achieved through the interaction of microwave field (photons) and nanomechanical vibrations (phonons). By calculating the transmission spectrum of the signal field, we show that the signal field can be efficiently attenuated or amplified, depending on the power of a second ‘gating’ (pump) field. This scheme may be a promising candidate for single-photon transistors and pave the way for numerous applications in telecommunication and quantum information technologies.

Smallest Nanoelectronic with Atomic Devices with Precise Structures

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

2000-01-01

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Large scale electromechanical transistor with application in mass sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Leisheng; Li, Lijie, E-mail: L.Li@swansea.ac.uk

Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to bemore » used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.« less

Flexible carbon-based ohmic contacts for organic transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik (Inventor)

2007-01-01

The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

2004-01-01

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

NASA Astrophysics Data System (ADS)

Nahar, Shamsun; Shafee, Marwah; Blin, Stéphane; Pénarier, Annick; Nouvel, Philippe; Coquillat, Dominique; Safwa, Amr M. E.; Knap, Wojciech; Hella, Mona M.

2016-11-01

Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santi, C. de; Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, G.

2014-08-18

With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.

PubMed

Passi, Vikram; Gahoi, Amit; Senkovskiy, Boris V; Haberer, Danny; Fischer, Felix R; Grüneis, Alexander; Lemme, Max C

2018-03-28

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I ON / I OFF current ratio of 87.5.

Analysis of low-offset CTIA amplifier for small-size-pixel infrared focal plane array

NASA Astrophysics Data System (ADS)

Zhang, Xue; Huang, Zhangcheng; Shao, Xiumei

2014-11-01

The design of input stage amplifier becomes more and more difficult as the expansion of format arrays and reduction of pixel size. A design method of low-offset amplifier based on 0.18-μm process used in small-size pixel is analyzed in order to decrease the dark signal of extended wavelength InGaAs infrared focal plane arrays (IRFPA). Based on an example of a cascode operational amplifier (op-amp), the relationship between input offset voltage and size of each transistor is discussed through theoretical analysis and Monte Carlo simulation. The results indicate that input transistors and load transistors have great influence on the input offset voltage while common-gate transistors are negligible. Furthermore, the offset voltage begins to increase slightly when the width and length of transistors decrease along with the diminution of pixel size, and raises rapidly when the size is smaller than a proximate threshold value. The offset voltage of preamplifiers with differential architecture and single-shared architecture in small pitch pixel are studied. After optimization under same conditions, simulation results show that single-shared architecture has smaller offset voltage than differential architecture.

Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrolyte-gated transistors based on phenyl-C61-butyric acid methyl ester (PCBM) films: bridging redox properties, charge carrier transport and device performance.

PubMed

Lan, Tian; Soavi, Francesca; Marcaccio, Massimo; Brunner, Pierre-Louis; Sayago, Jonathan; Santato, Clara

2018-05-24

The n-type organic semiconductor phenyl-C61-butyric acid methyl ester (PCBM), a soluble fullerene derivative well investigated for organic solar cells and transistors, can undergo several successive reversible, diffusion-controlled, one-electron reduction processes. We exploited such processes to shed light on the correlation between electron transfer properties, ionic and electronic transport as well as device performance in ionic liquid (IL)-gated transistors. Two ILs were considered, based on bis(trifluoromethylsulfonyl)imide [TFSI] as the anion and 1-ethyl-3-methylimidazolium [EMIM] or 1-butyl-1-methylpyrrolidinium [PYR14] as the cation. The aromatic structure of [EMIM] and its lower steric hindrance with respect to [PYR14] favor a 3D (bulk) electrochemical doping. As opposed to this, for [PYR14] the doping seems to be 2D (surface-confined). If the n-doping of the PCBM is pursued beyond the first electrochemical process, the transistor current vs. gate-source voltage plots in [PYR14][TFSI] feature a maximum that points to the presence of finite windows of high conductivity in IL-gated PCBM transistors.

Feasibility study of a latchup-based particle detector exploiting commercial CMOS technologies

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Matteucci, G.; Civera, P.; Demarchi, D.; Villani, G.; Weber, M.

2009-12-01

The stimulated ignition of latchup effects caused by external radiation has so far proved to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors devices, leaving the capability of sensing to external sensors. The paper first describes the state-of-the-art of the project and its development over the latest years, then the present and future studies are proposed. An elementary cell composed of two transistors connected in a thyristor structure is shown. The study begins using traditional bipolar transistors since the latchup effect is originated as a parasitic circuit composed of such devices. Then, an equivalent circuit built up of MOS transistors is exploited, resulting an even more promising and challenging configuration than that obtained via bipolar transistors. As the MOS transistors are widely used at present in microelectronics devices and sensors, a latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of signal sensors and radiation monitoring.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Ion sensors based on novel fiber organic electrochemical transistors for lead ion detection.

PubMed

Wang, Yuedan; Zhou, Zhou; Qing, Xing; Zhong, Weibing; Liu, Qiongzhen; Wang, Wenwen; Li, Mufang; Liu, Ke; Wang, Dong

2016-08-01

Fiber organic electrochemical transistors (FECTs) based on polypyrrole and nanofibers have been prepared for the first time. FECTs exhibited excellent electrical performances, on/off ratios up to 10(4) and low applied voltages below 2 V. The ion sensitivity behavior of the fiber organic electrochemical transistors was investigated. It exhibited that the transfer curve of FECTs shifted to lower gate voltage with increasing cations concentration, the sensitivity reached to 446 μA/dec in the 10(-5)-10(-2) M Pb(2+) concentration range. The ion selective properties of the FECTs have also been systematically studied for the detection of potassium, calcium, aluminum, and lead ions. The devices with different cations showed great difference in response curves. It was suitable for selectively monitoring Pb(2+) with respect to other cations. The results indicated FECTs were very effective for electrochemical sensing of lead ion, which opened a promising perspective for wearable electronics in healthcare and biological application. Graphical Abstract The schematic diagram of fiber organic electrochemical transistors based on polypyrrole and nanofibers for ion sensing.

Nanogap Electrodes towards Solid State Single-Molecule Transistors.

PubMed

Cui, Ajuan; Dong, Huanli; Hu, Wenping

2015-12-01

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Bhargava, Kshitij; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2016-11-01

Formation of a stable, reproducible zinc oxide (ZnO) nanorod-network-based photosensitive field-effect transistor using a hydrothermal process at low temperature has been demonstrated. K2Cr2O7 additive was used to improve adhesion and facilitate growth of the ZnO nanorod network over the SiO2/Si substrate. Transistor characteristics obtained in the dark resemble those of the n-channel-mode field-effect transistor (FET). The devices showed I on/ I off ratio above 8 × 102 under dark condition, field-effect mobility of 4.49 cm2 V-1 s-1, and threshold voltage of -12 V. Further, under ultraviolet (UV) illumination, the FET exhibited sensitivity of 2.7 × 102 in off-state (-10 V) versus 1.4 in on-state (+9.7 V) of operation. FETs based on such nanorod networks showed good photoresponse, which is attributed to the large surface area of the nanorod network. The growth temperature for ZnO nanorod networks was kept at 110°C, enabling a low-temperature, cost-effective, simple approach for high-performance ZnO-based FETs for large-scale production. The role of network interfaces in the FET performance is also discussed.

High transconductance organic electrochemical transistors

NASA Astrophysics Data System (ADS)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-07-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

High transconductance organic electrochemical transistors

PubMed Central

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-01-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

Water-gel for gating graphene transistors.

PubMed

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

High-frequency self-aligned graphene transistors with transferred gate stacks.

PubMed

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-07-17

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

PubMed Central

Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

2016-01-01

In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

NASA Astrophysics Data System (ADS)

Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

2016-08-01

In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

PubMed

Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

2016-08-05

In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

PubMed

Lee, Young Tack; Kwon, Hyeokjae; Kim, Jin Sung; Kim, Hong-Hee; Lee, Yun Jae; Lim, Jung Ah; Song, Yong-Won; Yi, Yeonjin; Choi, Won-Kook; Hwang, Do Kyung; Im, Seongil

2015-10-27

Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

Circuit-level simulation of transistor lasers and its application to modelling of microwave photonic links

NASA Astrophysics Data System (ADS)

Iezekiel, Stavros; Christou, Andreas

2015-03-01

Equivalent circuit models of a transistor laser are used to investigate the suitability of this relatively new device for analog microwave photonic links. The three-terminal nature of the device enables transistor-based circuit design techniques to be applied to optoelectronic transmitter design. To this end, we investigate the application of balanced microwave amplifier topologies in order to enable low-noise links to be realized with reduced intermodulation distortion and improved RF impedance matching compared to conventional microwave photonic links.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

PubMed

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

DTIC Science & Technology

2017-03-01

energy levels on a GaN-on-silicon high electron mobility transistor was created. Based on physical results of 2.0-MeV protons irradiation to fluence...and the physical device at 2.0-MeV proton irradiation , predictions were made for 5.0, 10.0, 20.0 and 40.0-MeV proton irradiation . The model generally...nitride, high electron mobility transistor, electronics, 2 MeV proton irradiation , radiation effects 15. NUMBER OF PAGES 87 16. PRICE CODE 17. SECURITY

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

NASA Astrophysics Data System (ADS)

Liu, Ning; Zhu, Li Qiang; Feng, Ping; Wan, Chang Jin; Liu, Yang Hui; Shi, Yi; Wan, Qing

2015-12-01

Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

Characterization and Modeling of Nano-organic Thin Film Phototransistors Based on 6,13(Triisopropylsilylethynyl)-Pentacene: Photovoltaic Effect

NASA Astrophysics Data System (ADS)

Jouili, A.; Mansouri, S.; Al-Ghamdi, Ahmed A.; El Mir, L.; Farooq, W. A.; Yakuphanoglu, F.

2017-04-01

Organic thin film transistors based on 6,13(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) with various channel widths and thicknesses of the active layer (300 nm and 135 nm) were photo-characterized. The photoresponse behavior and the gate field dependence of the charge transport were analyzed in detail. The surface properties of TIPS-pentacene deposited on silicon dioxide substrate were investigated using an atomic force microscope. We confirm that the threshold voltage values of the TIPS-pentacene transistor depend on the intensity of white light illumination. With the multiple trapping and release model, we have developed an analytical model that was applied to reproduce the experimental output characteristics of organic thin film transistors based on TIPS-pentacene under dark and under light illumination.

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

PubMed Central

Liu, Ning; Zhu, Li Qiang; Feng, Ping; Wan, Chang Jin; Liu, Yang Hui; Shi, Yi; Wan, Qing

2015-01-01

Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption. PMID:26656113

Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length.

PubMed

Cao, Xuan; Wu, Fanqi; Lau, Christian; Liu, Yihang; Liu, Qingzhou; Zhou, Chongwu

2017-02-28

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10 5 , low-voltage operation, and good mobility of ∼15.03 cm 2 V -1 s -1 . These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics.

Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

NASA Astrophysics Data System (ADS)

Hasanah, L.; Suhendi, E.; Khairrurijal

2018-05-01

Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

NASA Astrophysics Data System (ADS)

Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

2006-10-01

Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

Modeling of charge transport in ion bipolar junction transistors.

PubMed

Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V

2014-06-17

Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

NASA Astrophysics Data System (ADS)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal radiation sensing and cryogenic terahertz radiation sensing.

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Current and emerging challenges of field effect transistor based bio-sensing

NASA Astrophysics Data System (ADS)

Matsumoto, Akira; Miyahara, Yuji

2013-10-01

Field-effect-transistor (FET) based electrical signal transduction is an increasingly prevalent strategy for bio-sensing. This technique, often termed ``Bio-FETs'', provides an essentially label-free and real-time based bio-sensing platform effective for a variety of targets. This review highlights recent progress and challenges in the field. A special focus is on the comprehension of emerging nanotechnology-based approaches to facilitate signal-transduction and amplification. Some new targets of Bio-FETs and the future perspectives are also discussed.

Current and emerging challenges of field effect transistor based bio-sensing.

PubMed

Matsumoto, Akira; Miyahara, Yuji

2013-11-21

Field-effect-transistor (FET) based electrical signal transduction is an increasingly prevalent strategy for bio-sensing. This technique, often termed "Bio-FETs", provides an essentially label-free and real-time based bio-sensing platform effective for a variety of targets. This review highlights recent progress and challenges in the field. A special focus is on the comprehension of emerging nanotechnology-based approaches to facilitate signal-transduction and amplification. Some new targets of Bio-FETs and the future perspectives are also discussed.

G4-FETs as Universal and Programmable Logic Gates

NASA Technical Reports Server (NTRS)

Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

2007-01-01

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

PubMed

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Linear-log counting-rate meter uses transconductance characteristics of a silicon planar transistor

NASA Technical Reports Server (NTRS)

Eichholz, J. J.

1969-01-01

Counting rate meter compresses a wide range of data values, or decades of current. Silicon planar transistor, operating in the zero collector-base voltage mode, is used as a feedback element in an operational amplifier to obtain the log response.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

PubMed

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

80 MeV C{sup 6+} ion irradiation effects on the DC electrical characteristics of silicon NPN power transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bharathi, M. N.; Vinayakprasanna, N. H.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in

The total dose effects of 80 MeV C{sup 6+} ions on the DC electrical characteristics of Silicon NPN rf power transistors have been studied in the dose range of 100 krad to 100 Mrad. The SRIM simulation was used to understand the energy loss and range of the ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔI{sub B} = I{sub Bpost} - I{sub Bpre}), dc forward current gain (h{sub FE}), transconductance (g{sub m}), displacement damage factor (K) and output characteristics (V{sub CE}-I{sub C}) were studied systematically before and after irradiation. The significantmore » degradation in base current (I{sub B}) and h{sub FE} was observed after irradiation. Isochronal annealing study was conducted on the irradiated transistors to analyze the recovery in different electrical parameters. These results were compared with {sup 60}C0 gamma irradiation results in the same dose range.« less

Theory of Magnetic Bipolar Transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor; Fabian, Jaroslav; Das Sarma, S.

2003-03-01

We introduce the concept of a magnetic bipolar transistor (MBT) (J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639.), which can be realized using already available materials. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin. If a base is a ferromagnetic semiconductor we suggest several methods for using spin-polarized bipolar transport (I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. f 88, 066603 (2002); J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B f 66, 165301 (2002).) to manipulate semiconductor ferromagnetism.

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil.

PubMed

Knobelspies, Stefan; Bierer, Benedikt; Daus, Alwin; Takabayashi, Alain; Salvatore, Giovanni Antonio; Cantarella, Giuseppe; Ortiz Perez, Alvaro; Wöllenstein, Jürgen; Palzer, Stefan; Tröster, Gerhard

2018-01-26

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO₂ gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits.

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

PubMed Central

Bierer, Benedikt; Takabayashi, Alain; Ortiz Perez, Alvaro; Wöllenstein, Jürgen

2018-01-01

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO2 gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits. PMID:29373524

A Klein-tunneling transistor with ballistic graphene

NASA Astrophysics Data System (ADS)

Wilmart, Quentin; Berrada, Salim; Torrin, David; Nguyen, V. Hung; Fève, Gwendal; Berroir, Jean-Marc; Dollfus, Philippe; Plaçais, Bernard

2014-06-01

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry-Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation.

Fully transparent conformal organic thin-film transistor array and its application as LED front driving.

PubMed

Cui, Nan; Ren, Hang; Tang, Qingxin; Zhao, Xiaoli; Tong, Yanhong; Hu, Wenping; Liu, Yichun

2018-02-22

A fully transparent conformal organic thin-film field-effect transistor array is demonstrated based on a photolithography-compatible ultrathin metallic grid gate electrode and a solution-processed C 8 -BTBT film. The resulting organic field-effect transistor array exhibits a high optical transparency of >80% over the visible spectrum, mobility up to 2 cm 2 V -1 s -1 , on/off ratio of 10 5 -10 6 , switching current of >0.1 mA, and excellent light stability. The transparent conformal transistor array is demonstrated to adhere well to flat and curved LEDs as front driving. These results present promising applications of the solution-processed wide-bandgap organic semiconductor thin films in future large-scale transparent conformal active-matrix displays.

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

PubMed

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (<10 V). In addition, outstanding mechanical flexibility of printed nanotube thin-film transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

PubMed

Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

2017-09-22

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

Base and collector resistances in heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Anholt, R.; Bozada, C.; Desalvo, G.; Dettmer, R.; Ebel, J.; Gillespie, J.; Jenkins, T.; Havasy, C.; Ito, C.; Nakano, K.; Pettiford, C.; Quach, T.; Sewell, J.; Via, D.

1997-11-01

In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to the outer base and inner collector periphery lengths which are larger than the emitter lengths when the base and collector electrodes surround the emitter element. These resistances can be extracted from reverse Gummel (current vs Vbc with Vbc = 0) and from measurements of output resistances at zero collector voltage sweeps. We compare models with measurements where the base and collector peripheries decrease with increasing emitter diameters.

Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode

PubMed Central

Kim, Youn; Kwon, Yeon Ju; Lee, Kang Eun; Oh, Youngseok; Um, Moon-Kwang; Seong, Dong Gi; Lee, Jea Uk

2016-01-01

Highly flexible and electrically-conductive multifunctional textiles are desirable for use in wearable electronic applications. In this study, we fabricated multifunctional textile composites by vacuum filtration and wet-transfer of graphene oxide films on a flexible polyethylene terephthalate (PET) textile in association with embedding Ag nanoparticles (AgNPs) to improve the electrical conductivity. A flexible organic transistor can be developed by direct transfer of a dielectric/semiconducting double layer on the graphene/AgNP textile composite, where the textile composite was used as both flexible substrate and conductive gate electrode. The thermal treatment of a textile-based transistor enhanced the electrical performance (mobility = 7.2 cm2·V−1·s−1, on/off current ratio = 4 × 105, and threshold voltage = −1.1 V) due to the improvement of interfacial properties between the conductive textile electrode and the ion-gel dielectric layer. Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). We believe that our simple methods for the fabrication of graphene/AgNP textile composite for use in textile-type transistors can potentially be applied to the development of flexible large-area electronic clothes. PMID:28335276

Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2016-03-01

In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.

2013-11-25

We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

NASA Astrophysics Data System (ADS)

Kanaki, Toshiki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2016-10-01

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet/nonferromagnet/ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.

A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

PubMed Central

Chen, Dajing; Lei, Sheng; Chen, Yuquan

2011-01-01

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

PubMed

Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

2011-03-01

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Ion bipolar junction transistors

PubMed Central

Tybrandt, Klas; Larsson, Karin C.; Richter-Dahlfors, Agneta; Berggren, Magnus

2010-01-01

Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated. PMID:20479274

General strategy for biodetection in high ionic strength solutions using transistor-based nanoelectronic sensors.

PubMed

Gao, Ning; Zhou, Wei; Jiang, Xiaocheng; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

2015-03-11

Transistor-based nanoelectronic sensors are capable of label-free real-time chemical and biological detection with high sensitivity and spatial resolution, although the short Debye screening length in high ionic strength solutions has made difficult applications relevant to physiological conditions. Here, we describe a new and general strategy to overcome this challenge for field-effect transistor (FET) sensors that involves incorporating a porous and biomolecule permeable polymer layer on the FET sensor. This polymer layer increases the effective screening length in the region immediately adjacent to the device surface and thereby enables detection of biomolecules in high ionic strength solutions in real-time. Studies of silicon nanowire field-effect transistors with additional polyethylene glycol (PEG) modification show that prostate specific antigen (PSA) can be readily detected in solutions with phosphate buffer (PB) concentrations as high as 150 mM, while similar devices without PEG modification only exhibit detectable signals for concentrations ≤10 mM. Concentration-dependent measurements exhibited real-time detection of PSA with a sensitivity of at least 10 nM in 100 mM PB with linear response up to the highest (1000 nM) PSA concentrations tested. The current work represents an important step toward general application of transistor-based nanoelectronic detectors for biochemical sensing in physiological environments and is expected to open up exciting opportunities for in vitro and in vivo biological sensing relevant to basic biology research through medicine.

High-flux ionic diodes, ionic transistors and ionic amplifiers based on external ion concentration polarization by an ion exchange membrane: a new scalable ionic circuit platform.

PubMed

Sun, Gongchen; Senapati, Satyajyoti; Chang, Hsueh-Chia

2016-04-07

A microfluidic ion exchange membrane hybrid chip is fabricated using polymer-based, lithography-free methods to achieve ionic diode, transistor and amplifier functionalities with the same four-terminal design. The high ionic flux (>100 μA) feature of the chip can enable a scalable integrated ionic circuit platform for micro-total-analytical systems.

Li-ion synaptic transistor for low power analog computing

DOE PAGES

Fuller, Elliot J.; Gabaly, Farid El; Leonard, Francois; ...

2016-11-22

Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, “write” linearity, low-voltage switching, and low power dissipation. Simulations of back propagation using the device properties reach ideal classification accuracy. Finally, physics-based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.

Base drive for paralleled inverter systems

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1980-01-01

In a paralleled inverter system, a positive feedback current derived from the total current from all of the modules of the inverter system is applied to the base drive of each of the power transistors of all modules, thereby to provide all modules protection against open or short circuit faults occurring in any of the modules, and force equal current sharing among the modules during turn on of the power transistors.

An organic transistor-based system for reference-less electrophysiological monitoring of excitable cells

PubMed Central

Spanu, A.; Lai, S.; Cosseddu, P.; Tedesco, M.; Martinoia, S.; Bonfiglio, A.

2015-01-01

In the last four decades, substantial advances have been done in the understanding of the electrical behavior of excitable cells. From the introduction in the early 70's of the Ion Sensitive Field Effect Transistor (ISFET), a lot of effort has been put in the development of more and more performing transistor-based devices to reliably interface electrogenic cells such as, for example, cardiac myocytes and neurons. However, depending on the type of application, the electronic devices used to this aim face several problems like the intrinsic rigidity of the materials (associated with foreign body rejection reactions), lack of transparency and the presence of a reference electrode. Here, an innovative system based on a novel kind of organic thin film transistor (OTFT), called organic charge modulated FET (OCMFET), is proposed as a flexible, transparent, reference-less transducer of the electrical activity of electrogenic cells. The exploitation of organic electronics in interfacing the living matters will open up new perspectives in the electrophysiological field allowing us to head toward a modern era of flexible, reference-less, and low cost probes with high-spatial and high-temporal resolution for a new generation of in-vitro and in-vivo monitoring platforms. PMID:25744085

Highly sensitive protein detection using a plasmonic field effect transistor (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shokri-Kojori, Hossein; Ji, Yiwen; Han, Xu; Paik, Younghun; Braunschweig, Adam; Kim, Sung Jin

2016-03-01

Localized surface Plasmon Resonance (LSPR) is a nanoscale phenomenon which presents strong resonance associated with noble metal nanostructures. This plasmon resonance based technology enables highly sensitive detection for chemical and biological applications. Recently, we have developed a plasmon field effect transistor (FET) that enables direct plasmonic-to-electric signal conversion with signal amplification. The plasmon FET consists of back-gated field effect transistor incorporated with gold nanoparticles on top of the FET channel. The gold nanostructures are physically separated from transistor electrodes and can be functionalized for a specific biological application. In this presentation, we report a successful demonstration of a model system to detect Con A proteins using Carbohydrate linkers as a capture molecule. The plasmon FET detected a very low concentration of Con A (0.006 mg/L) while it offers a wide dynamic range of 0.006-50 mg/L. In this demonstration, we used two-color light sources instead of a bulky spectrometer to achieve high sensitivity and wide dynamic range. The details of two-color based differential measurement method will be discussed. This novel protein-based sensor has several advantages such as extremely small size for point-of-care system, multiplexing capability, no need of complex optical geometry.

THE SILICON OLFACTORY BULB: A NEUROMORPHIC APPROACH TO MOLECULAR SENSING WITH CHEMORECEPTIVE NEURON MOS TRANSISTORS (CNMOS)

EPA Science Inventory

Within the 3 -year effort, we have established several major findings:

• Chemical sensor in fluid environment with inorganic and polymer sensing surfaces (1,5): Conventional metal oxide semiconductor field effect transistor (MOSFET)-based chemical sensing su...

• Conceptual techniques for reducing parasitic current gain of lateral pnp transistors

  NASA Technical Reports Server (NTRS)

  Gallagher, R. C.; Scott, J. M.

  1969-01-01

  Two techniques have been conceptually proposed as possible means of reducing parasitic beta in lateral p-n-p transistors. One method uses a degenerate substrate and high concentration P /plus/ guard-ring diffusion, another places the base contact at the center of an annular ring structure.