Progress toward magnetic confinement of a positron-electron plasma: nearly 100% positron injection efficiency into a dipole trap

NASA Astrophysics Data System (ADS)

Stoneking, Matthew

2017-10-01

The hydrogen atom provides the simplest system and in some cases the most precise one for comparing theory and experiment in atomics physics. The field of plasma physics lacks an experimental counterpart, but there are efforts underway to produce a magnetically confined positron-electron plasma that promises to represent the simplest plasma system. The mass symmetry of positron-electron plasma makes it particularly tractable from a theoretical standpoint and many theory papers have been published predicting modified wave and stability properties in these systems. Our approach is to utilize techniques from the non-neutral plasma community to trap and accumulate electrons and positrons prior to mixing in a magnetic trap with good confinement properties. Ultimately we aim to use a levitated superconducting dipole configuration fueled by positrons from a reactor-based positron source and buffer-gas trap. To date we have conducted experiments to characterize and optimize the positron beam and test strategies for injecting positrons into the field of a supported permanent magnet by use of ExB drifts and tailored static and dynamic potentials applied to boundary electrodes and to the magnet itself. Nearly 100% injection efficiency has been achieved under certain conditions and some fraction of the injected positrons are confined for as long as 400 ms. These results are promising for the next step in the project which is to use an inductively energized high Tc superconducting coil to produce the dipole field, initially in a supported configuration, but ultimately levitated using feedback stabilization. Work performed with the support of the German Research Foundation (DFG), JSPS KAKENHI, NIFS Collaboration Research Program, and the UCSD Foundation.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

PubMed

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Recent study of beam stability in the PSR

NASA Astrophysics Data System (ADS)

Wang, T. S. F.; Cooper, R.; Fitzgerald, D.; Frankle, S.; Hardek, T.; Hutson, R.; Macek, R.; Ohmori, C.; Plum, M.; Thiessen, H.

1993-05-01

A fast transverse instability with beam loss has been observed in the 800 MeV Los Alamos Pro Ring (PSR) when the injected beam intensity reaches 2 - 4(10)(exp 13) protons per pulse. Previous observations indicate that the instability is most likely driven by electrons trapped within the proton beam. Theoretical study shown that beam leakage into the inter-bunch gap leads to electron trapping. Recent experiments were carried out by using the newly implemented 'pinger' and by varying the machine transition gamma to explore further the 'e-p' instability and the nature of the instability. This paper summarizes some of these recent experimental results and theoretical studies.

Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

2004-01-01

Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

Effects of interfacial stability between electron transporting layer and cathode on the degradation process of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Ta-Ya; Lee, Yong-Han; Song, Ok-Keun

2007-11-01

The authors have demonstrated that the increase of electron injection barrier height between tris(8-hydroxyquinoline)aluminum (Alq3) and LiF /Al cathode is one of the most critical parameters to determine the reliability of organic light-emitting diode with the typical structure of indium tin oxide/N ,N'-bis(naphthalen-1-yl)-N ,N'-bis(phenyl) benzidine/Alq3/LiF /Al. The electrical properties of several devices (hole only, electron only, and integrated double-layered devices) have been measured in the function of operating time to analyze the bulk and interface property changes. Bulk properties of trap energy and mobility in an organic layer have been estimated by using trap-charge-limited currents and transient electroluminescence measurements.

Observation of magnetic fluctuations and rapid density decay of magnetospheric plasma in Ring Trap 1

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Yano, Y.; Mikami, H.; Kasaoka, N.; Sakamoto, W.

2012-06-01

The Ring Trap 1 device, a magnetospheric configuration generated by a levitated dipole field magnet, has created high-β (local β ˜ 70%) plasma by using electron cyclotron resonance heating (ECH). When a large population of energetic electrons is generated at low neutral gas pressure operation, high frequency magnetic fluctuations are observed. When the fluctuations are strongly excited, rapid loss of plasma was simultaneously observed especially in a quiet decay phase after the ECH microwave power is turned off. Although the plasma is confined in a strongly inhomogeneous dipole field configuration, the frequency spectra of the fluctuations have sharp frequency peaks, implying spatially localized sources of the fluctuations. The fluctuations are stabilized by decreasing the hot electron component below approximately 40%, realizing stable high-β confinement.

Solvation of excess electrons trapped in charge pockets on molecular surfaces

NASA Astrophysics Data System (ADS)

Jalbout, Abraham F.

This work considers the ability of hydrogen fluoride (HF) to solvate excess electrons located on cyclic hydrocarbon surfaces. The principle applied involves the formation of systems in which excess electrons can be stabilized not only on concentrated molecular surface charge pockets but also by HF. Recent studies have shown that OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), at the same time, the hydrogen atoms on the opposite side of this surface form a pocket of positive charge can attract the excess electron. This density can be further stabilized by the addition of an HF molecule that can form an 'anion with an internally solvated electron' (AISE) state. These systems are shown to be stable with respect to vertical electron detachment (VDE).

Laboratory Astrophysics Using a Microcalorimeter and Bragg Crystal Spectrometer on an Electron Beam Ion Trap

NASA Technical Reports Server (NTRS)

Brinton, John (Technical Monitor); Silver, Eric

2005-01-01

We completed modifications to the new microcalorimeter system dedicated for use on the EBIT at NIST, which included: 1) a redesign of the x-ray calibration source from a direct electron impact source to one that irradiates the microcalorimeter with fluorescent x-rays. The resulting calibration lines are free of bremsstrahlung background; 2) the microcalorimeter electronic circuit was significantly improved to ensure long-term stability for lengthy experimental runs

Dynamics and reactivity of trapped electrons on supported ice crystallites.

PubMed

Stähler, Julia; Gahl, Cornelius; Wolf, Martin

2012-01-17

The solvation dynamics and reactivity of localized excess electrons in aqueous environments have attracted great attention in many areas of physics, chemistry, and biology. This manifold attraction results from the importance of water as a solvent in nature as well as from the key role of low-energy electrons in many chemical reactions. One prominent example is the electron-induced dissociation of chlorofluorocarbons (CFCs). Low-energy electrons are also critical in the radiation chemistry that occurs in nuclear reactors. Excess electrons in an aqueous environment are localized and stabilized by the local rearrangement of the surrounding water dipoles. Such solvated or hydrated electrons are known to play an important role in systems such as biochemical reactions and atmospheric chemistry. Despite numerous studies over many years, little is known about the microscopic details of these electron-induced chemical processes, and interest in the fundamental processes involved in the reactivity of trapped electrons continues. In this Account, we present a surface science study of the dynamics and reactivity of such localized low-energy electrons at D(2)O crystallites that are supported by a Ru(001) single crystal metal surface. This approach enables us to investigate the generation and relaxation dynamics as well as dissociative electron attachment (DEA) reaction of excess electrons under well-defined conditions. They are generated by photoexcitation in the metal template and transferred to trapping sites at the vacuum interface of crystalline D(2)O islands. In these traps, the electrons are effectively decoupled from the electronic states of the metal template, leading to extraordinarily long excited state lifetimes on the order of minutes. Using these long-lived, low-energy electrons, we study the DEA to CFCl(3) that is coadsorbed at very low concentrations (∼10(12) cm(-2)). Using rate equations and direct measurement of the change of surface dipole moment, we estimated the electron surface density for DEA, yielding cross sections that are orders of magnitude higher than the electron density measured in the gas phase.

Surface states and annihilation characteristics of positrons trapped at the oxidized Cu(100) surface

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Weiss, A. H.

2013-06-01

In this work we present the results of theoretical studies of positron surface and bulk states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the oxidized Cu(100) surface under conditions of high oxygen coverage. Oxidation of the Cu(100) surface has been studied by performing an ab-initio investigation of the stability and electronic structure of the Cu(100) missing row reconstructed surface at various on-surface and subsurface oxygen coverages ranging from 0.5 to 1.5 monolayers using density functional theory (DFT). All studied structures have been found to be energetically more favorable as compared to structures formed by purely on-surface oxygen adsorption. The observed decrease in the positron work function when oxygen atoms occupy on-surface and subsurface sites has been attributed to a significant charge redistribution within the first two layers, buckling effects within each layer and an interlayer expansion. The computed positron binding energy, positron surface state wave function, and annihilation probabilities of the surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data obtained from studies of oxidation of the Cu(100) surface using positron annihilation induced Auger electron spectroscopy (PAES). The results presented provide an explanation for the changes observed in the probability of annihilation of surface trapped positrons with Cu 3p core-level electrons as a function of annealing temperature.

Overview of LDX Results

NASA Astrophysics Data System (ADS)

Kesner, J.; Boxer, A. C.; Ellsworth, J. L.; Karim, I.; Garnier, D. T.; Hansen, A. K.; Mauel, M. E.; Ortiz, E. E.

2006-10-01

The levitated dipole experiment (LDX) is a new research facility that is investigating plasma confinement and stability in a dipole magnetic field configuration as a possible catalyzed DD fusion power source that would avoid the burning of tritium. We report the production of high beta plasma confined by a laboratory superconducting dipole using neutral gas fueling and electron cyclotron resonance heating (ECRH). The pressure results from a population of anisotropic energetic trapped electrons that is sustained by microwave heating provided sufficient neutral gas is supplied to the plasma. The trapped electron beta was observed to be limited by the hot electron interchange (HEI) instability, but when the neutral gas was programmed so as to maintain the deuterium gas pressure near 0.2 mPa, the fast electron pressure increased by more than a factor of ten and the resulting stable high beta plasma was maintained quasi-continuously for up to 14 seconds. Low frequency (<10 kHz) fluctuations are sometimes observed at low neutral base pressure.

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

PubMed Central

Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo

2015-01-01

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field. Thus, accumulated hole traps near the channel/dielectric interface cause negative shift of the threshold voltage, supporting the oxygen vacancy model. In addition, we find that ionized oxygen vacancies easily recover their neutral defect configurations by capturing electrons when the Fermi level increases. Our results are in good agreement with the experimental observation that applying a positive gate bias pulse of short duration eliminates hole traps and thus leads to the recovery of device stability from persistent photoconductivity. PMID:27877799

Stability of an aqueous quadrupole micro-trap

DOE PAGES

Park, Jae Hyun; Krstić, Predrag S.

2012-03-30

Recently demonstrated functionality of an aqueous quadrupole micro- or nano-trap opens a new avenue for applications of the Paul traps, like is confinement of a charged biomolecule which requires water environment for its chemical stability. Besides strong viscosity forces, motion of a charged particle in the aqueous trap is subject to dielectrophoretic and electrophoretic forces. In this study, we describe the general conditions for stability of a charged particle in an aqueous quadrupole trap. We find that for the typical micro-trap parameters, effects of both dielectrophoresis and electrophoresis significantly influence the trap stability. In particular, the aqueous quadrupole trap couldmore » play of a role of a synthetic virtual nanopore for the 3rd generation of DNA sequencing technology.« less

Highly sensitive free radical detection by nitrone-functionalized gold nanoparticles

NASA Astrophysics Data System (ADS)

Du, Libo; Huang, Saipeng; Zhuang, Qianfen; Jia, Hongying; Rockenbauer, Antal; Liu, Yangping; Liu, Ke Jian; Liu, Yang

2014-01-01

The detection of free radicals and related species has attracted significant attention in recent years because of their critical roles in physiological and pathological processes. Among the methods for the detection of free radicals, electron spin resonance (ESR) coupled with the use of the spin trapping technique has been an effective approach for characterization and quantification of these species due to its high specificity. However, its application in biological systems, especially in in vivo systems, has been greatly limited partially due to the low reaction rate between the currently available spin traps with biological radicals. To overcome this drawback, we herein report the first example of nitrone functionalized gold nanoparticles (Au@EMPO) as highly efficient spin traps in which the thiolated EMPO (2-(ethoxycarbonyl)-2-methyl-3,4-dihydro-2H-pyrrole 1-oxide) derivative was self-assembled on gold nanoparticles. Kinetic studies showed that Au@EMPO has a 137-fold higher reaction rate constant with &z.rad;OH than PBN (N-tert-butyl-α-phenylnitrone). Owing to the high rate of trapping &z.rad;OH by Au@EMPO as well as the high stability of the resulting spin adduct (t1/2 ~ 56 min), Au@EMPO affords 124-fold higher sensitivity for &z.rad;OH than EMPO. Thus, this new nanospin trap shows great potential in trapping the important radicals such as &z.rad;OH in various biological systems and provides a novel strategy to design spin traps with much improved properties.The detection of free radicals and related species has attracted significant attention in recent years because of their critical roles in physiological and pathological processes. Among the methods for the detection of free radicals, electron spin resonance (ESR) coupled with the use of the spin trapping technique has been an effective approach for characterization and quantification of these species due to its high specificity. However, its application in biological systems, especially in in vivo systems, has been greatly limited partially due to the low reaction rate between the currently available spin traps with biological radicals. To overcome this drawback, we herein report the first example of nitrone functionalized gold nanoparticles (Au@EMPO) as highly efficient spin traps in which the thiolated EMPO (2-(ethoxycarbonyl)-2-methyl-3,4-dihydro-2H-pyrrole 1-oxide) derivative was self-assembled on gold nanoparticles. Kinetic studies showed that Au@EMPO has a 137-fold higher reaction rate constant with &z.rad;OH than PBN (N-tert-butyl-α-phenylnitrone). Owing to the high rate of trapping &z.rad;OH by Au@EMPO as well as the high stability of the resulting spin adduct (t1/2 ~ 56 min), Au@EMPO affords 124-fold higher sensitivity for &z.rad;OH than EMPO. Thus, this new nanospin trap shows great potential in trapping the important radicals such as &z.rad;OH in various biological systems and provides a novel strategy to design spin traps with much improved properties. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr04559e

Trap level spectroscopic investigations of U: ZnAl2O4: Role of defect centres in the TSL process

NASA Astrophysics Data System (ADS)

Mohapatra, M.; Kumar, Mithlesh; Kadam, R. M.

2018-03-01

In order to evaluate the trap level spectroscopic properties of Uranium in ZnAl2O4 spinel host, undoped and Uranium doped ZnAl2O4 samples were synthesized. From photoluminescence (PL) data it was confirmed that uranium gets stabilized in the system as UO66- (octahedral uranate). Electron spin resonance (ESR) studies for the gamma irradiated sample suggested the formation of O2-, F+ and V centres. From the TSL (thermally stimulated luminescence) data, the trap parameters such as frequency factor and activation energy etc. were evaluated. From ESR-TSL correlation it was confirmed that the destruction of O2- ion coincides with TSL glow peak appeared at 332 K.

Enhanced Luminescent Stability through Particle Interactions in Silicon Nanocrystal Aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Joseph B.; Dandu, Naveen; Velizhanin, Kirill A.

2015-10-27

Close-packed assemblies of ligand-passivated colloidal nanocrystals can exhibit enhanced photoluminescent stability, but the origin of this effect is unclear. Here, we use experiment, simulation, and ab initio computation to examine the influence of interparticle interactions on the photoluminescent stability of silicon nanocrystal aggregates. The time-dependent photoluminescence emitted by structures ranging in size from a single quantum dot to agglomerates of more than a thousand is compared with Monte Carlo simulations of noninteracting ensembles using measured single-particle blinking data as input. In contrast to the behavior typically exhibited by the metal chalcogenides, the measured photoluminescent stability shows an enhancement with respectmore » to the noninteracting scenario with increasing aggregate size. We model this behavior using time-dependent density functional theory calculations of energy transfer between neighboring nanocrystals as a function of nanocrystal size, separation, and the presence of charge and/or surface-passivation defects. Our results suggest that rapid exciton transfer from “bright” nanocrystals to surface trap states in nearest-neighbors can efficiently fill such traps and enhance the stability of emission by promoting the radiative recombination of slowly diffusing excited electrons.« less

Role of zonal flows in trapped electron mode turbulence through nonlinear gyrokinetic particle and continuum simulationa)

NASA Astrophysics Data System (ADS)

Ernst, D. R.; Lang, J.; Nevins, W. M.; Hoffman, M.; Chen, Y.; Dorland, W.; Parker, S.

2009-05-01

Trapped electron mode (TEM) turbulence exhibits a rich variety of collisional and zonal flow physics. This work explores the parametric variation of zonal flows and underlying mechanisms through a series of linear and nonlinear gyrokinetic simulations, using both particle-in-cell and continuum methods. A new stability diagram for electron modes is presented, identifying a critical boundary at ηe=1, separating long and short wavelength TEMs. A novel parity test is used to separate TEMs from electron temperature gradient driven modes. A nonlinear scan of ηe reveals fine scale structure for ηe≳1, consistent with linear expectation. For ηe<1, zonal flows are the dominant saturation mechanism, and TEM transport is insensitive to ηe. For ηe>1, zonal flows are weak, and TEM transport falls inversely with a power law in ηe. The role of zonal flows appears to be connected to linear stability properties. Particle and continuum methods are compared in detail over a range of ηe=d ln Te/d ln ne values from zero to five. Linear growth rate spectra, transport fluxes, fluctuation wavelength spectra, zonal flow shearing spectra, and correlation lengths and times are in close agreement. In addition to identifying the critical parameter ηe for TEM zonal flows, this paper takes a challenging step in code verification, directly comparing very different methods of simulating simultaneous kinetic electron and ion dynamics in TEM turbulence.

A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

2015-11-01

This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NASA Astrophysics Data System (ADS)

Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

2016-02-01

Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

Positron states and annihilation characteristics of surface-trapped positrons at the oxidized Cu(110) surface

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Olenga, Antoine; Weiss, A. H.

2013-03-01

The process by which oxide layers are formed on metal surfaces is still not well understood. In this work we present the results of theoretical studies of positron states and annihilation characteristics of surface-trapped positrons at the oxidized Cu(110) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Cu(110) has been performed on the basis of density functional theory and using DMOl3 code. The changes in the positron work function and the surface dipole moment when oxygen atoms occupy on-surface and sub-surface sites have been attributed to charge redistribution within the first two layers, buckling effects within each layer and interlayer expansion. The computed positron binding energy, positron surface state wave function, and annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data obtained from studies of oxidized transition metal surfaces using positron annihilation induced Auger electron spectroscopy. This work was supported in part by the National Science Foundation Grant DMR-0907679.

Spatial Control of Laser Wakefield Accelerated Electron Beams

NASA Astrophysics Data System (ADS)

Maksimchuk, A.; Behm, K.; Zhao, T.; Joglekar, A. S.; Hussein, A.; Nees, J.; Thomas, A. G. R.; Krushelnick, K.; Elle, J.; Lucero, A.; Samarin, G. M.; Sarry, G.; Warwick, J.

2017-10-01

The laser wakefield experiments to study and control spatial properties of electron beams were performed using HERCULES laser at the University of Michigan at power of 100 TW. In the first experiment multi-electron beam generation was demonstrated using co-propagating, parallel laser beams with a π-phase shift mirror and showing that interaction between the wakefields can cause injection to occur for plasma and laser parameters in which a single wakefield displays no significant injection. In the second experiment a magnetic triplet quadrupole system was used to refocus and stabilize electron beams at the distance of 60 cm from the interaction region. This produced a 10-fold increase in remote gamma-ray activation of 63Cu using a lead converter. In the third experiment measurements of un-trapped electrons with high transverse momentum produce a 500 mrad (FWHM) ring. This ring is formed by electrons that receive a forward momentum boost by traversing behind the bubble and its size is inversely proportional to the plasma density. The characterization of divergence and charge of this electron ring may reveal information about the wakefield structure and trapping potential. Supported by U.S. Department of Energy and the National Nuclear Security Administration and Air Force Office of Scientific Research.

Computational quest for spherical C12B68 fullerenes with "magic" π-electrons and quasi-planar tetra-coordinated carbon.

PubMed

Li, Fengyu; Jiang, De-en; Chen, Zhongfang

2014-02-01

Inspired by the exciting properties of B80 clusters and the novel chemical bonding of planar tetra-coordinated carbon (ptC), we computationally investigated C12B68 clusters by substituting 12 boron atoms to 12 carbon in the B80 framework. Three types of C12B68 configurations, namely core-shell, boron-trapped and fullerene-like, were examined. The fullerene-like C12B68 clusters are featured with multiple quasi-planar tetra-coordinated carbon moieties; though with "magic" (72) number of electrons, they are not highly aromatic due to the limitations of Hirsch's rule for clusters with more than 50 π electrons. These C12B68 fullerenes are not global minima, but the appreciable HOMO-LUMO gaps, spherical aromaticity, and the thermal stability indicate their reasonable stabilities.

Theory of type 3b solar radio bursts. [plasma interaction and electron beams

NASA Technical Reports Server (NTRS)

Smith, R. A.; Delanoee, J.

1975-01-01

During the initial space-time evolution of an electron beam injected into the corona, the strong beam-plasma interaction occurs at the head of the beam, leading to the amplification of a quasi-monochromatic large-amplitude plasma wave that stabilizes by trapping the beam particles. Oscillation of the trapped particles in the wave troughs amplifies sideband electrostatic waves. The sidebands and the main wave subsequently decay to observable transverse electromagnetic waves through the parametric decay instability. This process gives rise to the elementary striation bursts. Owing to velocity dispersion in the beam and the density gradient of the corona, the entire process may repeat at a finite number of discrete plasma levels, producing chains of elementary bursts. All the properties of the type IIIb bursts are accounted for in the context of the theory.

Study of positron annihilation with core electrons at the clean and oxygen covered Ag(001) surface

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Olenga, A.; Fazleev, N. G.; Weiss, A. H.

2013-03-01

In this paper we present measurements of the energy spectrum of electrons emitted as a result of Positron Annihilation Induce Auger Electron Emission from a clean and oxygen covered Ag (100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak was observed at ~ 40 eV corresponding to the N23VV Auger transition in agreement with previous PAES studies. Experimental results were investigated theoretically by calculations of positron states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the clean and oxygen covered Ag(100) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Ag(100) has been performed on the basis of density functional theory and using DMOl3 code. The computed positron binding energy, positron surface state wave function, and positron annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data. This work was supported in part by the National Science Foundation Grant # DMR-0907679.

Active stabilization of ion trap radiofrequency potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.

2016-05-15

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.

PubMed

Park, Hyun-Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung-Jun; Kwon, Jang-Yeon; Chung, Kwun-Bum

2017-09-14

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. The electrical properties of the WIZO layers used in the S/D electrode and the active-channel layer were adjusted through oxygen partial pressure during the deposition process. To explain enhancements of the device performance and stability of the homojunction-structured WIZO-TFT, a systematic investigation of correlation between device performance and physical properties at the interface between the active layer and the S/D electrodes such as the contact resistance, surface/interfacial roughness, interfacial-trap density, and interfacial energy-level alignments was conducted. The homojunction-structured WIZO-TFT exhibited a lower contact resistance, smaller interfacial-trap density, and flatter interfacial roughness than the WIZO-TFT with the heterojunction structure. The 0.09 eV electron barrier of the homojunction-structured WIZO-TFT is lower than the 0.21 eV value that was obtained for the heterojunction-structured WIZO-TFT. This reduced electron barrier may be attributed to enhancements of device performance and stability, that are related to the carrier transport.

UV-Vis-NIR spectroelectrochemical and in situ conductance studies of unusual stability of n- and p-doped poly(dimethyldioctylquaterthiophene-alt-oxadiazole) under high cathodic and anodic polarizations.

PubMed

Pomerantz, Z; Levi, M D; Salitra, G; Demadrille, R; Fisyuk, A; Zaban, A; Aurbach, D; Pron, A

2008-02-21

Combined CV studies and UV-Vis-NIR spectroelectrochemical investigations revealed an unusual stability of the p- and n-doped PMOThOD in the wide potential window of 4 V. The n-doping process occurs in this polymer down to -2.7 V (vs. Ag/Ag+) in a non-destructive way with the characteristic development of the omega3 transition as a function of the doping level. In situ electronic transport studies revealed a high conductivity of the n-doped polymer which implies high mobility of the negatively charged carriers in the freshly doped PMOThOD film electrodes. An increase in the cathodic polarization, long-term cycling of the film electrodes, especially of higher thickness, results in a growing contribution of the negatively charged carriers trapping to the redox properties of the PMOThOD. The trapping of the charged carriers reduces gradually the electronic conductance of the PMOThOD film, but its effect on the redox-capacity of the film (in a typical scan rates range up to 50 mV s(-1)) is only minor.

Electron Trapping and Charge Transport by Large Amplitude Whistlers

NASA Technical Reports Server (NTRS)

Kellogg, P. J.; Cattell, C. A.; Goetz, K.; Monson, S. J.; Wilson, L. B., III

2010-01-01

Trapping of electrons by magnetospheric whistlers is investigated using data from the Waves experiment on Wind and the S/WAVES experiment on STEREO. Waveforms often show a characteristic distortion which is shown to be due to electrons trapped in the potential of the electrostatic part of oblique whistlers. The density of trapped electrons is significant, comparable to that of the unperturbed whistler. Transport of these trapped electrons to new regions can generate potentials of several kilovolts, Trapping and the associated potentials may play an important role in the acceleration of Earth's radiation belt electrons.

Solution-Processed Transistors Using Colloidal Nanocrystals with Composition-Matched Molecular "Solders": Approaching Single Crystal Mobility.

PubMed

Jang, Jaeyoung; Dolzhnikov, Dmitriy S; Liu, Wenyong; Nam, Sooji; Shim, Moonsub; Talapin, Dmitri V

2015-10-14

Crystalline silicon-based complementary metal-oxide-semiconductor transistors have become a dominant platform for today's electronics. For such devices, expensive and complicated vacuum processes are used in the preparation of active layers. This increases cost and restricts the scope of applications. Here, we demonstrate high-performance solution-processed CdSe nanocrystal (NC) field-effect transistors (FETs) that exhibit very high carrier mobilities (over 400 cm(2)/(V s)). This is comparable to the carrier mobilities of crystalline silicon-based transistors. Furthermore, our NC FETs exhibit high operational stability and MHz switching speeds. These NC FETs are prepared by spin coating colloidal solutions of CdSe NCs capped with molecular solders [Cd2Se3](2-) onto various oxide gate dielectrics followed by thermal annealing. We show that the nature of gate dielectrics plays an important role in soldered CdSe NC FETs. The capacitance of dielectrics and the NC electronic structure near gate dielectric affect the distribution of localized traps and trap filling, determining carrier mobility and operational stability of the NC FETs. We expand the application of the NC soldering process to core-shell NCs consisting of a III-V InAs core and a CdSe shell with composition-matched [Cd2Se3](2-) molecular solders. Soldering CdSe shells forms nanoheterostructured material that combines high electron mobility and near-IR photoresponse.

Stability of colloidal silver nanoparticles trapped in lipid bilayer: effect of lecithin concentration and applied temperature.

PubMed

Barani, Hossein; Montazer, Majid; Braun, Hans-Georg; Dutschk, Victoria

2014-12-01

The use of silver nanoparticle on various substrates has been widespread because of its good antibacterial properties that directly depend on the stability of the silver nanoparticles in a colloidal suspension. In this study, the colloidal solutions of the silver nanoparticles were synthesised by a simple and safe method by using lecithin as a stabilising agent and their stability was examined at various temperatures. The effect of the lecithin concentrations on the stability of the synthesised silver nanoparticles was examined from 25 to 80°C at 5°C intervals, by recording the changes in the UV-vis absorption spectra, the hydrodynamic diameter and the light scattering intensity of the silver nanoparticles. In addition, the morphology of the synthesised silver nanoparticles was investigated with the low-voltage scanning electron microscopy and transmission electron microscopy. The results indicated that increasing temperature caused different changes in the size of the stabilised and the unstabilised silver nanoparticles. The size of the stabilised silver nanoparticles reduced from 38 to 36 nm during increasing temperature, which confirmed good stability.

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

NASA Technical Reports Server (NTRS)

Kuhlman, G. J.

1979-01-01

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

A review of atomic clock technology, the performance capability of present spaceborne and terrestrial atomic clocks, and a look toward the future

NASA Technical Reports Server (NTRS)

Vessot, Robert F. C.

1989-01-01

Clocks have played a strong role in the development of general relativity. The concept of the proper clock is presently best realized by atomic clocks, whose development as precision instruments has evolved very rapidly in the last decades. To put a historical prospective on this progress since the year AD 1000, the time stability of various clocks expressed in terms of seconds of time error over one day of operation is shown. This stability of operation must not be confused with accuracy. Stability refers to the constancy of a clock operation as compared to that of some other clocks that serve as time references. Accuracy, on the other hand, is the ability to reproduce a previously defined frequency. The issues are outlined that must be considered when accuracy and stability of clocks and oscillators are studied. In general, the most widely used resonances result from the hyperfine interaction of the nuclear magnetic dipole moment and that of the outermost electron, which is characteristic of hydrogen and the alkali atoms. During the past decade hyperfine resonances of ions have also been used. The principal reason for both the accuracy and the stability of atomic clocks is the ability of obtaining very narrow hyperfine transition resonances by isolating the atom in some way so that only the applied stimulating microwave magnetic field is a significant source of perturbation. It is also important to make resonance transitions among hyperfine magnetic sublevels where separation is independent, at least to first order, of the magnetic field. In the case of ions stored in traps operating at high magnetic fields, one selects the trapping field to be consistent with a field-independent transition of the trapped atoms.

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Chang Bum

2014-08-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔVT) is presented by providing a ΔVT model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ˜1.8 and ˜2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time.

Stability of aerosol droplets in Bessel beam optical traps under constant and pulsed external forces

NASA Astrophysics Data System (ADS)

David, Grégory; Esat, Kıvanç; Hartweg, Sebastian; Cremer, Johannes; Chasovskikh, Egor; Signorell, Ruth

2015-04-01

We report on the dynamics of aerosol droplets in optical traps under the influence of additional constant and pulsed external forces. Experimental results are compared with simulations of the three-dimensional droplet dynamics for two types of optical traps, the counter-propagating Bessel beam (CPBB) trap and the quadruple Bessel beam (QBB) trap. Under the influence of a constant gas flow (constant external force), the QBB trap is found to be more stable compared with the CPBB trap. By contrast, under pulsed laser excitation with laser pulse durations of nanoseconds (pulsed external force), the type of trap is of minor importance for the droplet stability. It typically needs pulsed laser forces that are several orders of magnitude higher than the optical forces to induce escape of the droplet from the trap. If the droplet strongly absorbs the pulsed laser light, these escape forces can be strongly reduced. The lower stability of absorbing droplets is a result of secondary thermal processes that cause droplet escape.

Stability of aerosol droplets in Bessel beam optical traps under constant and pulsed external forces.

PubMed

David, Grégory; Esat, Kıvanç; Hartweg, Sebastian; Cremer, Johannes; Chasovskikh, Egor; Signorell, Ruth

2015-04-21

We report on the dynamics of aerosol droplets in optical traps under the influence of additional constant and pulsed external forces. Experimental results are compared with simulations of the three-dimensional droplet dynamics for two types of optical traps, the counter-propagating Bessel beam (CPBB) trap and the quadruple Bessel beam (QBB) trap. Under the influence of a constant gas flow (constant external force), the QBB trap is found to be more stable compared with the CPBB trap. By contrast, under pulsed laser excitation with laser pulse durations of nanoseconds (pulsed external force), the type of trap is of minor importance for the droplet stability. It typically needs pulsed laser forces that are several orders of magnitude higher than the optical forces to induce escape of the droplet from the trap. If the droplet strongly absorbs the pulsed laser light, these escape forces can be strongly reduced. The lower stability of absorbing droplets is a result of secondary thermal processes that cause droplet escape.

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

NASA Astrophysics Data System (ADS)

Huang, Yanhui; Wu, Ke; Bell, Michael; Oakes, Andrew; Ratcliff, Tyree; Lanzillo, Nicholas A.; Breneman, Curt; Benicewicz, Brian C.; Schadler, Linda S.

2016-08-01

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO2 and ZrO2 nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (˜1017 cm-3). The charge trapping is found to have the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO2 filled composites and is likely caused by impact excitation due to the low excitation energy of TiO2 compared to ZrO2. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO2 may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO2 composites.

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.; Wu, Ke

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO{sub 2} and ZrO{sub 2} nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (∼10{sup 17} cm{sup −3}). The charge trapping is found to havemore » the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO{sub 2} filled composites and is likely caused by impact excitation due to the low excitation energy of TiO{sub 2} compared to ZrO{sub 2}. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO{sub 2} may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO{sub 2} composites.« less

A Surface-Coupled Optical Trap with 1-bp Precision via Active Stabilization

PubMed Central

Okoniewski, Stephen R.; Carter, Ashley R.; Perkins, Thomas T.

2017-01-01

Optical traps can measure bead motions with Å-scale precision. However, using this level of precision to infer 1-bp motion of molecular motors along DNA is difficult, since a variety of noise sources degrade instrumental stability. In this chapter, we detail how to improve instrumental stability by (i) minimizing laser pointing, mode, polarization, and intensity noise using an acousto-optical-modulator mediated feedback loop and (ii) minimizing sample motion relative to the optical trap using a 3-axis piezo-electric-stage mediated feedback loop. These active techniques play a critical role in achieving a surface stability of 1 Å in 3D over tens of seconds and a 1-bp stability and precision in a surface-coupled optical trap over a broad bandwidth (Δf = 0.03–2 Hz) at low force (6 pN). These active stabilization techniques can also aid other biophysical assays that would benefit from improved laser stability and/or Å-scale sample stability, such as atomic force microscopy and super-resolution imaging. PMID:27844426

Proceedings of the Cooling, Condensation, and Storage of Hydrogen Cluster Ions Workshop Held in Menlo Park, California on 8-9 January 1987.

DTIC Science & Technology

1987-12-01

a kind of race track .13 ".is " . oo 0,.& :,- .., V~e v C4 si Fig. 4. Sketch of cylinder rf-type trap for k - 2. Experimental examples of higher order...1983. 31 S 52. Hiraoka, K. and P. Kebarle, "A Determination of the Stabilities of H5*, H7 + , Hg. and H11 + from Measurement of the Gas Phase Ion...73 H. Michels and J. Montgomery -- Electronic Structure and Stability of Small Cation and Anion Hydrogen Cluster Ions

Overview of the High Performance Antiproton Trap (HiPAT) Experiment

NASA Technical Reports Server (NTRS)

Martin, James; Chakrabarti, Suman; Pearson, Boise; Sims, W. Herbert; Lewis, Raymond; Fant, Wallace; Rodgers, Stephen (Technical Monitor)

2002-01-01

A general overview of the High Performance Antiproton Trap (HiPAT) Experiment is presented. The topics include: 1) Why Antimatter? 2) HiPAT Applicability; 3) Approach-Goals; 4) HiPAT General Layout; 5) Sizing For Containment; 6) Laboratory Operations; 7) Vacuum System Cleaning; 8) Ion Production Via Electron Gun; 9) Particle Capture Via Ion Sources; 10) Ion Beam Steering/Focusing; 11) Ideal Ion Stacking Sequence; 12) Setup For Dynamic Capture; 13) Dynamic Capture of H(+) Ions; 14) Dynamic Capture; 15) Radio Frequency Particle Detection; 16) Radio Frequency Antenna Modeling; and 17) R.F. Stabilization-Low Frequencies. A short presentation of propulsion applications of Antimatter is also given. This paper is in viewgraph form.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Design and Preliminary Testing of a High Performance Antiproton Trap (HiPAT)

NASA Technical Reports Server (NTRS)

Martin, James; Meyer, Kirby; Kramer, Kevin; Smith, Gerald; Lewis, Raymond; Rodgers, Stephen L. (Technical Monitor)

2000-01-01

Antimatter represents the pinnacle of energy density, offering the potential to enhance current fusion/fission concepts enabling various classes of deep space missions. Current production rates are sufficient to support proof-of-concept evaluation of many key technologies associated with antimatter-derived propulsion. Storage has been identified as a key enabling technology for all antimatter-related operations, and as such is the current focus of this NASA-MSFC effort to design and fabricate a portable device capable of holding up to 10(exp 12) particles. Hardware has been assembled and initial tests are underway to evaluate the trap behavior using electron gun generated, positive hydrogen ions. Ions have been stored for tens of minutes, limited by observed interaction with background gas. Additionally, radio frequency manipulation is being tested to increase lifetime by stabilizing the stored particles, potentially reducing their interaction with background gas, easing requirements on ultimate trap vacuum and precision mechanical alignment.

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Exploring Ramsey-coherent population trapping atomic clock realized with pulsed microwave modulated laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Yun, Peter; Tian, Yuan

2014-03-07

A scheme for a Ramsey-coherent population trapping (CPT) atomic clock that eliminates the acousto-optic modulator (AOM) is proposed and experimentally studied. Driven by a periodically microwave modulated current, the vertical-cavity surface-emitting laser emits a continuous beam that switches between monochromatic and multichromatic modes. Ramsey-CPT interference has been studied with this mode-switching beam. In eliminating the AOM, which is used to generate pulsed laser in conventional Ramsey-CPT atomic clock, the physics package of the proposed scheme is virtually the same as that of a conventional compact CPT atomic clock, although the resource budget for the electronics will slightly increase as amore » microwave switch should be added. By evaluating and comparing experimentally recorded signals from the two Ramsey-CPT schemes, the short-term frequency stability of the proposed scheme was found to be 46% better than the scheme with AOM. The experimental results suggest that the implementation of a compact Ramsey-CPT atomic clock promises better frequency stability.« less

Stability of aerosol droplets in Bessel beam optical traps under constant and pulsed external forces

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Grégory; Esat, Kıvanç; Hartweg, Sebastian

We report on the dynamics of aerosol droplets in optical traps under the influence of additional constant and pulsed external forces. Experimental results are compared with simulations of the three-dimensional droplet dynamics for two types of optical traps, the counter-propagating Bessel beam (CPBB) trap and the quadruple Bessel beam (QBB) trap. Under the influence of a constant gas flow (constant external force), the QBB trap is found to be more stable compared with the CPBB trap. By contrast, under pulsed laser excitation with laser pulse durations of nanoseconds (pulsed external force), the type of trap is of minor importance formore » the droplet stability. It typically needs pulsed laser forces that are several orders of magnitude higher than the optical forces to induce escape of the droplet from the trap. If the droplet strongly absorbs the pulsed laser light, these escape forces can be strongly reduced. The lower stability of absorbing droplets is a result of secondary thermal processes that cause droplet escape.« less

Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

PubMed

Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

2014-07-22

Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Han, Ju-Hwan; Choi, Wan-Ho; Park, Jozeph; Park, Jin-Seong

2017-12-13

Silicon dioxide (SiO 2 ) films were synthesized by plasma-enhanced atomic layer deposition (PEALD) using BTBAS [bis(tertiarybutylamino) silane] as the precursor and O 2 plasma as the reactant, at a temperature range from 50 to 200 °C. While dielectric constant values larger than 3.7 are obtained at all deposition temperatures, the leakage current levels are drastically reduced to below 10 -12 A at temperatures above 150 °C, which are similar to those obtained in thermally oxidized and PECVD grown SiO 2 . Thin film transistors (TFTs) based on In-Sn-Zn-O (ITZO) semiconductors were fabricated using thermal SiO 2 , PECVD SiO 2 , and PEALD SiO 2 grown at 150 °C as the gate dielectrics, and superior device performance and stability are observed in the last case. A linear field effect mobility of 68.5 cm 2 /(V s) and a net threshold voltage shift (ΔV th ) of approximately 1.2 V under positive bias stress (PBS) are obtained using the PEALD SiO 2 as the gate insulator. The relatively high concentration of hydrogen in the PEALD SiO 2 is suggested to induce a high carrier density in the ITZO layer deposited onto it, which results in enhanced charge transport properties. Also, it is most likely that the hydrogen atoms have passivated the electron traps related to interstitial oxygen defects, thus resulting in improved stability under PBS. Although the PECVD SiO 2 contains a hydrogen concentration similar to that of PEALD SiO 2 , its relatively large surface roughness appears to induce scattering effects and the generation of electron traps, which result in inferior device performance and stability.

A Surface-Coupled Optical Trap with 1-bp Precision via Active Stabilization.

PubMed

Okoniewski, Stephen R; Carter, Ashley R; Perkins, Thomas T

2017-01-01

Optical traps can measure bead motions with Å-scale precision. However, using this level of precision to infer 1-bp motion of molecular motors along DNA is difficult, since a variety of noise sources degrade instrumental stability. In this chapter, we detail how to improve instrumental stability by (1) minimizing laser pointing, mode, polarization, and intensity noise using an acousto-optical-modulator mediated feedback loop and (2) minimizing sample motion relative to the optical trap using a three-axis piezo-electric-stage mediated feedback loop. These active techniques play a critical role in achieving a surface stability of 1 Å in 3D over tens of seconds and a 1-bp stability and precision in a surface-coupled optical trap over a broad bandwidth (Δf = 0.03-2 Hz) at low force (6 pN). These active stabilization techniques can also aid other biophysical assays that would benefit from improved laser stability and/or Å-scale sample stability, such as atomic force microscopy and super-resolution imaging.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

N-tert-butylmethanimine N-oxide is an efficient spin-trapping probe for EPR analysis of glutathione thiyl radical

PubMed Central

Scott, Melanie J.; Billiar, Timothy R.; Stoyanovsky, Detcho A.

2016-01-01

The electron spin resonance (EPR) spin-trapping technique allows detection of radical species with nanosecond half-lives. This technique is based on the high rates of addition of radicals to nitrones or nitroso compounds (spin traps; STs). The paramagnetic nitroxides (spin-adducts) formed as a result of reactions between STs and radical species are relatively stable compounds whose EPR spectra represent “structural fingerprints” of the parent radical species. Herein we report a novel protocol for the synthesis of N-tert-butylmethanimine N-oxide (EBN), which is the simplest nitrone containing an α-H and a tertiary α′-C atom. We present EPR spin-trapping proof that: (i) EBN is an efficient probe for the analysis of glutathione thiyl radical (GS•); (ii) β-cyclodextrins increase the kinetic stability of the spin-adduct EBN/•SG; and (iii) in aqueous solutions, EBN does not react with superoxide anion radical (O2−•) to form EBN/•OOH to any significant extent. The data presented complement previous studies within the context of synthetic accessibility to EBN and efficient spin-trapping analysis of GS•. PMID:27941944

A new approach to determine the capture conditions of bark beetles in pheromone-baited traps

PubMed Central

Ozcan, Gonca Ece; Cicek, Osman; Enez, Korhan; Yildiz, Mustafa

2014-01-01

Forests form an organic unity with a great number of organic and inorganic components and tend to maintain the sustainability of their existing balance. However, some factors which adversely affect the balance of nature may interrupt this sustainability. The epidemic which is formed by bark beetles in their spreading region, due to various factors, changes the stability so much that interference is required. One of the most common methods used to monitor these beetles is pheromone-baited traps. The recognition of parameters, such as date (day/month/year), temperature and humidity, when bark beetles are captured in pheromone-baited traps, especially those used for monitoring will help to increase the trap efficiency on land and to develop an effective strategy for combating pests. In this study, an electronic control unit was added to pheromone-baited traps in order to obtain all of the above mentioned parameters. This unit operates with microcontrollers and data related to the parameters is saved in a storage unit. This is triggered by the beetle at the moment it is captured in the trap. A photovoltaic system was used to meet the energy needed for the system functioning and to complete the counting process in due time. PMID:26019592

The LTX- β Research Program

NASA Astrophysics Data System (ADS)

Majeski, R.; Bell, R. E.; Boyle, D. P.; Hughes, P. E.; Kaita, R.; Kozub, T.; Merino, E.; Zhang, X.; Biewer, T. M.; Canik, J. M.; Elliott, D. B.; Reinke, M. L.; Bialek, J.; Hansen, C.; Jarboe, T.; Kubota, S.; Rhodes, T.; Dorf, M. A.; Rognlien, T.; Scotti, F.; Soukhanovskii, V. A.; Koel, B. E.; Donovan, D.; Maan, A.

2017-10-01

LTX- β, the upgrade to the Lithium Tokamak Experiment, approximately doubles the toroidal field (to 3.4 kG) and plasma current (to 150 - 175 kA) of LTX. Neutral beam injection at 20 kV, 30 A will be added in February 2018, with systems provided by Tri-Alpha Energy. A 9.3 GHz, 100 kW, short-pulse (5-10 msec) source will be available in summer 2018 for electron Bernstein wave heating. New lithium evaporation sources will allow between-shots recoating of the walls. Upgrades to the diagnostic set are intended to strengthen the research program in the critical areas of equilibrium, core transport, scrape-off layer physics, and plasma-material interactions. The LTX- β research program will combine the capability for gradient-free temperature profiles, to stabilize ion and electron temperature gradient-driven modes, with approaches to stabilization of ∇n-driven modes, such as the trapped electron mode (TEM). Candidate stabilization mechanisms for the TEM include sheared flow stabilization, which can be tested on LTX- β. The goal will be to minimize anomalous transport in a low aspect ratio tokamak, which would lead to a very compact, tokamak-based fusion core. This work supported by US DOE contracts DE-AC02-09CH11466 and DE-AC05-00OR22725.

Miniaturized magnet-less RF electron trap. II. Experimental verification

DOE PAGES

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.; ...

2017-06-15

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Localized tearing modes in the magnetotail driven by curvature effects

NASA Technical Reports Server (NTRS)

Sundaram, A. K.; Fairfield, D. H.

1995-01-01

The stability of collisionless tearing modes is examined in the presence of curvature drift resonances and the trapped particle effects. A kinetic description for both electrons and ions is employed to investigate the stability of a two-dimensional equilibrium model. The main features of the study are to treat the ion dynamics properly by incorporating effects associated with particle trajectories in the tail fields and to include the linear coupling of trapped particle modes. Generalized dispersion relations are derived in several parameter regimes by considering two important sublayers of the reconnecting region. For a typical choice of parameters appropriate to the current sheet region, we demonstrate that localized tearing modes driven by ion curvature drift resonance effects are excited in the current sheet region with growth time of the order of a few seconds. Also, we examine nonlocal characteristics of tearing modes driven by curvature effects and show that modes growing in a fraction of a second arise when mode widths are larger than the current sheet width. Further, we show that trapped particle effects, in an interesting frequency regime, significantly enhance the growth rate of the tearing mode. The relevance of this theory for substorm onset phase and other features of the substorms is briefly discussed.

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

PubMed

Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

2018-05-23

The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Defective TiO 2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells

DOE PAGES

Li, Yanbo; Cooper, Jason K.; Liu, Wenjun; ...

2016-08-18

Formation of planar heterojunction perovskite solar cells exhibiting both high efficiency and stability under continuous operation remains a challenge. Here, we show this can be achieved by using a defective TiO 2 thin film as the electron transport layer. TiO 2 layers with native defects are deposited by electron beam evaporation in an oxygen-deficient environment. Deep-level hole traps are introduced in the TiO 2 layers and contribute to a high photoconductive gain and reduced photocatalytic activity. The high photoconductivity of the TiO 2 electron transport layer leads to improved efficiency for the fabricated planar devices. A maximum power conversion efficiencymore » of 19.0% and an average PCE of 17.5% are achieved. In addition, the reduced photocatalytic activity of the TiO 2 layer leads to enhanced long-Term stability for the planar devices. Under continuous operation near the maximum power point, an efficiency of over 15.4% is demonstrated for 100 h.« less

Chip Scale Atomic Resonator Frequency Stabilization System With Ultra-Low Power Consumption for Optoelectronic Oscillators.

PubMed

Zhao, Jianye; Zhang, Yaolin; Lu, Haoyuan; Hou, Dong; Zhang, Shuangyou; Wang, Zhong

2016-07-01

We present a long-term chip scale stabilization scheme for optoelectronic oscillators (OEOs) based on a rubidium coherent population trapping (CPT) atomic resonator. By locking a single mode of an OEO to the (85)Rb 3.035-GHz CPT resonance utilizing an improved phase-locked loop (PLL) with a PID regulator, we achieved a chip scale frequency stabilization system for the OEO. The fractional frequency stability of the stabilized OEO by overlapping Allan deviation reaches 6.2 ×10(-11) (1 s) and  ∼ 1.45 ×10 (-11) (1000 s). This scheme avoids a decrease in the extra phase noise performance induced by the electronic connection between the OEO and the microwave reference in common injection locking schemes. The total physical package of the stabilization system is [Formula: see text] and the total power consumption is 400 mW, which provides a chip scale and portable frequency stabilization approach with ultra-low power consumption for OEOs.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Accessibility of LDI saturated by electron trapping

NASA Astrophysics Data System (ADS)

Russell, David; Rose, Harvey A.

2000-10-01

The fact that trapped electrons, by flattening the distribution function near a Langmuir wave’s (LW’s) phase velocity, can reduce the damping of that wave, is well known. It has been predicted that this will lead to a reduction of the LDI threshold. Simulations and quasi-analytic theory have shown that this is the case, but not as has been previously suggested^1 because in general the LW response is slightly nonresonant and this departure from resonance can be as important as damping corrections to Vlasov dynamics^2. Detailed calculations of periodic solutions arising from the nonlinear evolution of the LDI, their stability, and dynamic transients, will be presented. The dependence of the nonlinear LDI threshold on the value of kλ D for the parent LW, together with loss of resonance limits on the LW amplitude, are translated into an LDI accessibility domain in the density temperature plane for backscatter SRS. 1. D. Mourenas, Phys. Plasmas 6, 1258 (1999). 2. H. A. Rose, 30th Anomalous Absorption Conference, 2000.

Photoinduced formation of reactive oxygen species and electrons from metal oxide-silica nanocomposite: An EPR spin-trapping study

NASA Astrophysics Data System (ADS)

Zhao, Hongxia; Chen, Xiuying; Li, Xintong; Shen, Chen; Qu, Baocheng; Gao, Jingsuo; Chen, Jingwen; Quan, Xie

2017-09-01

Metal oxide nanocomposites with photocatalytic activity have the potential for many applications in environmental remediation and biomedicine. In this study, we investigated the formation and stabilization of electrons/holes from three metal oxide-silica nanocomposites (CuO-SiO2, Fe2O3-SiO2 and ZnO-SiO2) under irradiation by electron paramagnetic resonance (EPR) technology. The characteristic EPR signals with g = 2.00070-2.00105, ΔHp-p = 2.17-2.37 G were determined, which corresponded to lattice-trapped electrons. Moreover, the generation of active species from CuO-SiO2, Fe2O3-SiO2 and ZnO-SiO2 in aqueous solution under irradiation was also systematically studied. The results showed that all the three nanocomposites could generate hydroxyl radical, singlet oxygen and electron. CuO-SiO2 was more effective than Fe2O3-SiO2 and ZnO-SiO2 in producing hydroxyl radical and electrons, while ZnO-SiO2 was the most efficient in generating singlet oxygen. In addition, CuO-SiO2 exhibited most obviously photocatalytic activity toward degradation of bisphenol A, followed by Fe2O3-SiO2 and ZnO-SiO2. These findings will provide vital insights into photocatalytic mechanisms and potentially photoinduced toxicity of metal oxide-silica nanocomposites.

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Hashizume, Tamotsu

2012-04-01

For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be ˜1.3 × 1012 cm-2. The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al2O3 passivation.

Cyclotron Resonance of Electrons Trapped in a Microwave Cavity

ERIC Educational Resources Information Center

Elmore, W. C.

1975-01-01

Describes an experiment in which the free-electron cyclotron resonance of electrons trapped in a microwave cavity by a Penning trap is observed. The experiment constitutes an attractive alternative to one of the Gardner-Purcell variety. (Author/GS)

A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model

NASA Technical Reports Server (NTRS)

Spicer, D. S.; Emslie, A. G.

1988-01-01

A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.

Comparing and Contrasting Detectors: JWST NIR vs HST WFC3

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.

2015-01-01

In many ways, WFC3s IR channel is a good indicator for what to expect with JWST. There are some differences, most of which should be beneficial in JWST- JWSTs lower operating temperature will freeze out charge traps that would affect WFC3. Benefits should include lower dark current, lower persistence, and better reciprocity- JWSTs more recent HgCdTe process has lower defect density. The benefits are as described above- JWST uses better indium barriers. The benefits should include fewer RC type pixels. One area where more study might be beneficial is stability. The detector electronics play a significant role in determining how stable a detector system is(v.s. bias drifts and photometry). JWSTs SIDECARs are completely WFC3s Ball electronics- Studies comparing the bias and photometric stability of WFC3 and JWST might be useful to informing data acquisition and calibration strategies for JWST.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Hua; Du, Mao -Hua; Stand, Luis

Scintillators attract wide research interest for their distinct applications in radiation detection. Elpasolite halides are among the most promising scintillators due to their high structural symmetry and good scintillation performance. A better understanding of their underlying scintillation mechanism opens up possibilities in scintillator development. In this work, we employ a variety of experimental techniques to study the two mixed-anion elpasolites Cs 2Na RBr 3I 3 ( R = La, Y). The emission of intrinsic Cs 2Na RBr 3I 3 with a light yield ranging from 20 000 to 40 000 ph / MeV is dominant by self-trapped exciton emission. Partialmore » substitution of R with Ce introduces a competing emission, the Ce 3+ 5d-to-4f radiative transition. Ab initio calculations are performed to investigate the electronic structures as well as the binding energies of polarons in Cs 2Na RBr 6. The calculated large self-trapped exciton binding energies are consistent with the observed high light yield due to self-trapped exciton (STE) emission. The unique electronic structure of halide elpasolites as calculated enhances the STE stability and the STE emission. The highly tunable scintillation properties of mixed-anion elpasolites underscore the role of their complex scintillation mechanism. Furthermore, our study provides guidance for the design of elpasolite scintillators with exceptional energy resolution and light yield desirable for applications.« less

Scintillation properties and electronic structure of the intrinsic and extrinsic mixed elpasolites Cs 2 Na RBr 3I 3 ( R = La, Y)

DOE PAGES

Wei, Hua; Du, Mao -Hua; Stand, Luis; ...

2016-02-19

Scintillators attract wide research interest for their distinct applications in radiation detection. Elpasolite halides are among the most promising scintillators due to their high structural symmetry and good scintillation performance. A better understanding of their underlying scintillation mechanism opens up possibilities in scintillator development. In this work, we employ a variety of experimental techniques to study the two mixed-anion elpasolites Cs 2Na RBr 3I 3 ( R = La, Y). The emission of intrinsic Cs 2Na RBr 3I 3 with a light yield ranging from 20 000 to 40 000 ph / MeV is dominant by self-trapped exciton emission. Partialmore » substitution of R with Ce introduces a competing emission, the Ce 3+ 5d-to-4f radiative transition. Ab initio calculations are performed to investigate the electronic structures as well as the binding energies of polarons in Cs 2Na RBr 6. The calculated large self-trapped exciton binding energies are consistent with the observed high light yield due to self-trapped exciton (STE) emission. The unique electronic structure of halide elpasolites as calculated enhances the STE stability and the STE emission. The highly tunable scintillation properties of mixed-anion elpasolites underscore the role of their complex scintillation mechanism. Furthermore, our study provides guidance for the design of elpasolite scintillators with exceptional energy resolution and light yield desirable for applications.« less

A Study of Electrical and Optical Stability of GSZO THin Film Transisitors

DTIC Science & Technology

2014-01-01

introduces an overview of the research carried out on IGZO , ZnO, and GSZO thin film transistors that is relevant to the work discussed in this...dangling bonds or electron trapping near the gate insulator interface in IGZO thin film transistors . Mathews et al. [13] indicated that subjecting TFTs to...Ping David Shieh, Hideo Hosono, and Jerzy Kanicki, Photofield-Effect in Amporphous In-Ga-Zn-O (a- IGZO ) Thin - Film Transistors . Journal of Information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Polycyclic Aromatic Hydrocarbon Ionization Energy Lowering in Water Ices

NASA Technical Reports Server (NTRS)

Gudipati, Murthy S.; Allamandola, Louis J.

2004-01-01

In studying various interstellar and solar system ice analogs, we have recently found that upon vacuum ultraviolet photolysis, polycyclic aromatic hydrocarbons (PAHs) frozen in water ice at low temperatures are easily ionized and indefinitely stabilized as trapped ions (Gudipati; Gudipati & Allamandola). Here we report the first experimental study that shows that PAH ionization energy is significantly lowered in PAH/H2O ices, in agreement with recent theoretical work (Woon & Park). The ionization energy (IE) of the PAH studied here, quaterrylene (C40H20, IE = 6.11 eV), is lowered by up to 2.11 eV in water ice. PAH ionization energy reduction in low-temperature water ice substantially expands the astronomical regions in which trapped ions and electrons may be important. This reduction in ionization energy should also hold for other types of trapped species in waterrich interstellar, circumstellar, and solar system ices. Subject headings: ISM: clouds - methods: laboratory - molecular processes - radiation mechanisms: nonthermal -ultraviolet: ISM - ultraviolet: solar system

A 2D Array of 100's of Ions for Quantum Simulation and Many-Body Physics in a Penning Trap

NASA Astrophysics Data System (ADS)

Bohnet, Justin; Sawyer, Brian; Britton, Joseph; Bollinger, John

2015-05-01

Quantum simulations promise to reveal new materials and phenomena for experimental study, but few systems have demonstrated the capability to control ensembles in which quantum effects cannot be directly computed. One possible platform for intractable quantum simulations may be a system of 100's of 9Be+ ions in a Penning trap, where the valence electron spins are coupled with an effective Ising interaction in a 2D geometry. Here we report on results from a new Penning trap designed for 2D quantum simulations. We characterize the ion crystal stability and describe progress towards bench-marking quantum effects of the spin-spin coupling using a spin-squeezing witness. We also report on the successful photodissociation of BeH+ contaminant molecular ions that impede the use of such crystals for quantum simulation. This work lays the foundation for future experiments such as the observation of spin dynamics under the quantum Ising Hamiltonian with a transverse field. Supported by a NIST-NRC Research Associateship.

Trapping Dynamics in Photosystem I-Light Harvesting Complex I of Higher Plants Is Governed by the Competition Between Excited State Diffusion from Low Energy States and Photochemical Charge Separation.

PubMed

Molotokaite, Egle; Remelli, William; Casazza, Anna Paola; Zucchelli, Giuseppe; Polli, Dario; Cerullo, Giulio; Santabarbara, Stefano

2017-10-26

The dynamics of excited state equilibration and primary photochemical trapping have been investigated in the photosystem I-light harvesting complex I isolated from spinach, by the complementary time-resolved fluorescence and transient absorption approaches. The combined analysis of the experimental data indicates that the excited state decay is described by lifetimes in the ranges of 12-16 ps, 32-36 ps, and 64-77 ps, for both detection methods, whereas faster components, having lifetimes of 550-780 fs and 4.2-5.2 ps, are resolved only by transient absorption. A unified model capable of describing both the fluorescence and the absorption dynamics has been developed. From this model it appears that the majority of excited state equilibration between the bulk of the antenna pigments and the reaction center occurs in less than 2 ps, that the primary charge separated state is populated in ∼4 ps, and that the charge stabilization by electron transfer is completed in ∼70 ps. Energy equilibration dynamics associated with the long wavelength absorbing/emitting forms harbored by the PSI external antenna are also characterized by a time mean lifetime of ∼75 ps, thus overlapping with radical pair charge stabilization reactions. Even in the presence of a kinetic bottleneck for energy equilibration, the excited state dynamics are shown to be principally trap-limited. However, direct excitation of the low energy chlorophyll forms is predicted to lengthen significantly (∼2-folds) the average trapping time.

Electron-trapping polycrystalline materials with negative electron affinity.

PubMed

McKenna, Keith P; Shluger, Alexander L

2008-11-01

The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considering their relevance for applications and abundance in the environment, there have been few experimental or theoretical studies of the electron trapping properties of grain boundaries in highly ionic materials such as the alkaline earth metal oxides and alkali halides. Here we demonstrate, by first-principles calculations on MgO, LiF and NaCl, a qualitatively new type of electron trapping at grain boundaries. This trapping is associated with the negative electron affinity of these materials and is unusual as the electron is confined in the empty space inside the dislocation cores.

Collisionless microtearing modes in hot tokamaks: Effect of trapped electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swamy, Aditya K.; Ganesh, R., E-mail: ganesh@ipr.res.in; Brunner, S.

2015-07-15

Collisionless microtearing modes have recently been found linearly unstable in sharp temperature gradient regions of large aspect ratio tokamaks. The magnetic drift resonance of passing electrons has been found to be sufficient to destabilise these modes above a threshold plasma β. A global gyrokinetic study, including both passing electrons as well as trapped electrons, shows that the non-adiabatic contribution of the trapped electrons provides a resonant destabilization, especially at large toroidal mode numbers, for a given aspect ratio. The global 2D mode structures show important changes to the destabilising electrostatic potential. The β threshold for the onset of the instabilitymore » is found to be generally downshifted by the inclusion of trapped electrons. A scan in the aspect ratio of the tokamak configuration, from medium to large but finite values, clearly indicates a significant destabilizing contribution from trapped electrons at small aspect ratio, with a diminishing role at larger aspect ratios.« less

Effective Trapping of Lithium Polysulfides Using a Functionalized Carbon Nanotube-Coated Separator for Lithium-Sulfur Cells with Enhanced Cycling Stability.

PubMed

Ponraj, Rubha; Kannan, Aravindaraj G; Ahn, Jun Hwan; Lee, Jae Hee; Kang, Joonhee; Han, Byungchan; Kim, Dong-Won

2017-11-08

The critical issues that hinder the practical applications of lithium-sulfur batteries, such as dissolution and migration of lithium polysulfides, poor electronic conductivity of sulfur and its discharge products, and low loading of sulfur, have been addressed by designing a functional separator modified using hydroxyl-functionalized carbon nanotubes (CNTOH). Density functional theory calculations and experimental results demonstrate that the hydroxyl groups in the CNTOH provoked strong interaction with lithium polysulfides and resulted in effective trapping of lithium polysulfides within the sulfur cathode side. The reduction in migration of lithium polysulfides to the lithium anode resulted in enhanced stability of the lithium electrode. The conductive nature of CNTOH also aided to efficiently reutilize the adsorbed reaction intermediates for subsequent cycling. As a result, the lithium-sulfur cell assembled with a functional separator exhibited a high initial discharge capacity of 1056 mAh g -1 (corresponding to an areal capacity of 3.2 mAh cm -2 ) with a capacity fading rate of 0.11% per cycle over 400 cycles at 0.5 C rate.

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Unconditionally marginal stability of harmonic electron hole equilibria in current-driven plasmas

NASA Astrophysics Data System (ADS)

Schamel, Hans

2018-06-01

Two forms of the linearized eigenvalue problem with respect to linear perturbations of a privileged cnoidal electron hole as a structural nonlinear equilibrium element are established. Whereas its integral form involves integrations along the characteristics or unperturbed particle orbits, the differential form has to cope with a differential operator of infinite order. Both are hence faced with difficulties to obtain a solution. A first successful attempt is, however, made by addressing a single harmonic wave as a nonlinear equilibrium structure. By this microscopic nonlinear approach, its marginal stability against linear perturbations in both linear stability regimes, the sub- and super-critical one, is shown independent of the mobility of ions and in favor with recent observations. Responsible for vanishing damping (growth) is the microscopic distortion of the resonant distribution function. The macroscopic form of the trapping nonlinearity—the 3/2 power term of the electrostatic potential in the density—which disappears in the monochromatic harmonic wave limit is consequently necessary for the occurrence of a nonlinear plasma instability in the sub-critical regime.

Trapped electron losses by interactions with coherent VLF waves

NASA Astrophysics Data System (ADS)

Walt, M.; Inan, U. S.; Voss, H. D.

1996-07-01

VLF whistler waves from lightning enter the magnetosphere and cause the precipitation of energetic trapped electrons by pitch angle scattering. These events, known as Lightning-induced Electron Precipitation (LEP) have been detected by satellite and rocket instruments and by perturbations of VLF waves traveling in the earth-ionosphere waveguide. Detailed comparison of precipitating electron energy spectra and time dependence are in general agreement with calculations of trapped electron interactions with ducted whistler waves. In particular the temporal structure of the precipitation and the dynamic energy spectra of the electrons confirm this interpretation of the phenomena. There are discrepancies between observed and measured electron flux intensities and pitch angle distributions, but these quantities are sensitive to unknown wave intensities and trapped particle fluxes near the loss cone angle. The overall effect of lightning generated VLF waves on the lifetime of trapped electrons is still uncertain. The flux of electrons deflected into the bounce loss cone by a discrete whistler wave has been measured in a few cases. However, the area of the precipitation region is not known, and thus the total number of electrons lost in an LEP event can only be estimated. While the LEP events are dramatic, more important effects on trapped electrons may arise from the small but numerous deflections which increase the pitch angle diffusion rate of the electron population.

Electron Cloud Trapping in Recycler Combined Function Dipole Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, Sergey A.; Nagaitsev, S.

2016-10-04

Electron cloud can lead to a fast instability in intense proton and positron beams in circular accelerators. In the Fermilab Recycler the electron cloud is confined within its combined function magnets. We show that the field of combined function magnets traps the electron cloud, present the results of analytical estimates of trapping, and compare them to numerical simulations of electron cloud formation. The electron cloud is located at the beam center and up to 1% of the particles can be trapped by the magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electronsmore » significantly increases the density of the cloud on the next revolution. In a Recycler combined function dipole this multiturn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The multi-turn build-up can be stopped by injection of a clearing bunch of 1010 p at any position in the ring.« less

Modified stimulated Raman scattering of a laser induced by trapped electrons in a plasma

NASA Astrophysics Data System (ADS)

Baliyan, Sweta; Rafat, Mohd.; Ahmad, Nafis; Sajal, Vivek

2017-10-01

The plasma wave, generated in stimulated Raman scattering process by an intense laser in the plasmas, traps a significant number of electrons in its potential energy minima. These electrons travel with the phase velocity of plasma wave and oscillate with bounce frequency. When the bounce frequency of electrons becomes equal to the growth rate of Raman process, resonance takes place. Now, Raman scattering gets modified by parametrically exciting a trapped electron mode and an electromagnetic sideband. The ponderomotive force due to the pump and sideband drives the plasma wave, whereas the density perturbation due to the trapped electron mode couples with the oscillating velocity of electrons due to the laser to produce a nonlinear current, driving the sideband.

On the stability of the internal kink mode in the banana regime

NASA Astrophysics Data System (ADS)

Fogaccia, G.; Romanelli, F.

1995-01-01

The stability of the internal kink mode is investigated taking into account the kinetic response associated to the trapped thermal ions. Ion-ion collisions and diamagnetic effects in the layer are also considered. A significant stabilizing contribution is obtained, even at low-β values, on the mode, which might be stable, on present experiments, even though predicted unstable according to the Bussac criterion [Bussac et al., Phys. Rev. Lett. 35, 1638 (1975)]. In addition, a trapped-ion instability is found, characterized by mode frequency of the order of the trapped-ion bounce-averaged magnetic drift frequency.

Electron and hole transport in the organic small molecule α-NPD

NASA Astrophysics Data System (ADS)

Rohloff, R.; Kotadiya, N. B.; Crǎciun, N. I.; Blom, P. W. M.; Wetzelaer, G. A. H.

2017-02-01

Electron and hole transport properties of the organic small molecule N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine are investigated by space-charge-limited current measurements. The hole transport shows trap-free behavior with a mobility of 2.3 × 10-8 m2/Vs at vanishing carrier density and electric field. The electron transport, on the other hand, shows heavily trap-limited behavior, which leads to highly unbalanced transport. A trap concentration of 1.3 × 1024 m-3 was found by modeling the electron currents, similar to the universal trap concentration found in conjugated polymers. This indicates that electron trapping is a generic property of organic semiconductors, ranging from vacuum-deposited small-molecules to solution-processed conjugated polymers.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

NASA Astrophysics Data System (ADS)

Shan, Shaukat Ali; Imtiaz, Nadia

2018-05-01

The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.

A Long DNA Segment in a Linear Nanoscale Paul Trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Sony nmn; Guan, Weihau; Reed, Mark A

2009-01-01

We study the dynamics of a linearly distributed line charge such as single stranded DNA (ssDNA) in a nanoscale, linear 2D Paul trap in vacuum. Using molecular dynamics simulations we show that a line charge can be trapped effectively in the trap for a well defined range of stability parameters. We investigated (i) a flexible bonded string of charged beads and (ii) a ssDNA polymer of variable length, for various trap parameters. A line charge undergoes oscillations or rotations as it moves, depending on its initial angle, the position of the center of mass and the velocity. The stability regionmore » for a strongly bonded line of charged beads is similar to that of a single ion with the same charge to mass ratio. Single stranded DNA as long as 40 nm does not fold or curl in the Paul trap, but could undergo rotations about the center of mass. However, we show that a stretching field in the axial direction can effectively prevent the rotations and increase the confinement stability.« less

Intrinsic charge trapping in amorphous oxide films: status and challenges

NASA Astrophysics Data System (ADS)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Laser-induced rotation and cooling of a trapped microgyroscope in vacuum

PubMed Central

Arita, Yoshihiko; Mazilu, Michael; Dholakia, Kishan

2013-01-01

Quantum state preparation of mesoscopic objects is a powerful playground for the elucidation of many physical principles. The field of cavity optomechanics aims to create these states through laser cooling and by minimizing state decoherence. Here we demonstrate simultaneous optical trapping and rotation of a birefringent microparticle in vacuum using a circularly polarized trapping laser beam—a microgyroscope. We show stable rotation rates up to 5 MHz. Coupling between the rotational and translational degrees of freedom of the trapped microgyroscope leads to the observation of positional stabilization in effect cooling the particle to 40 K. We attribute this cooling to the interaction between the gyroscopic directional stabilization and the optical trapping field. PMID:23982323

Quantification of the Conditioning Phase in Cooled Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; O'Neal, Sean; Yang, Hao; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2015-08-01

Thallium-bromide (TlBr) is currently under investigation as an alternative room-temperature semiconductor gamma-ray spectrometer due to its favorable material properties (large bandgap, high atomic numbers, and high density). Previous work has shown that 5 mm thick pixelated TlBr detectors can achieve sub-1% FWHM energy resolution at 662 keV for single-pixel events. These results are limited to - 20° C operation where detector performance is stable. During the first one to five days of applied bias at - 20° C, many TlBr detectors undergo a conditioning phase, where the energy resolution improves and the depth-dependent electron drift velocity stabilizes. In this work, the spectroscopic performance, drift velocity, and freed electron concentrations of multiple 5 mm thick pixelated TlBr detectors are monitored throughout the conditioning phase. Additionally, conditioning is performed twice on the same detector at different times to show that improvement mechanisms relax when the detector is stored without bias. We conclude that the improved spectroscopy results from internal electric field stabilization and uniformity caused by fewer trapped electrons.

Linear gyrokinetic simulations of microinstabilities within the pedestal region of H-mode NSTX discharges in a highly shaped geometry

DOE PAGES

Coury, M.; Guttenfelder, W.; Mikkelsen, D. R.; ...

2016-06-30

Linear (local) gyrokinetic predictions of edge microinstabilities in highly shaped, lithiated and non-lithiated NSTX discharges are reported using the gyrokinetic code GS2. Microtearing modes dominate the non-lithiated pedestal top. The stabilization of these modes at the lithiated pedestal top enables the electron temperature pedestal to extend further inwards, as observed experimentally. Kinetic ballooning modes are found to be unstable mainly at the mid-pedestal of both types of discharges, with un- stable trapped electron modes nearer the separatrix region. At electron wavelengths, ETG modes are found to be unstable from mid-pedestal outwards for η e, exp ~2.2 with higher growth ratesmore » for the lithiated discharge. Near the separatrix, the critical temperature gradient for driving ETG modes is reduced in the presence of lithium, re ecting the reduction of the lithiated density gradients observed experimentally. A preliminary linear study in the edge of non-lithiated discharges shows that the equilibrium shaping alters the electrostatic modes stability, found more unstable at high plasma shaping.« less

Stability and instability for low refractive-index-contrast particle trapping in a dual-beam optical trap.

PubMed

Huff, Alison; Melton, Charles N; Hirst, Linda S; Sharping, Jay E

2015-10-01

A dual-beam optical trap is used to trap and manipulate dielectric particles. When the refractive index of these particles is comparable to that of the surrounding medium, equilibrium trapping locations within the system shift from stable to unstable depending on fiber separation and particle size. This is due to to the relationship between gradient and scattering forces. We experimentally and computationally study the transitions between stable and unstable trapping of poly(methyl methacrylate) beads for a range of parameters relevant to experimental setups involving giant unilamellar vesicles. We present stability maps for various fiber separations and particle sizes, and find that careful attention to particle size and configuration is necessary to obtain reproducible quantitative results for soft matter stretching experiments.

Stability and instability for low refractive-index-contrast particle trapping in a dual-beam optical trap

PubMed Central

Huff, Alison; Melton, Charles N.; Hirst, Linda S.; Sharping, Jay E.

2015-01-01

A dual-beam optical trap is used to trap and manipulate dielectric particles. When the refractive index of these particles is comparable to that of the surrounding medium, equilibrium trapping locations within the system shift from stable to unstable depending on fiber separation and particle size. This is due to to the relationship between gradient and scattering forces. We experimentally and computationally study the transitions between stable and unstable trapping of poly(methyl methacrylate) beads for a range of parameters relevant to experimental setups involving giant unilamellar vesicles. We present stability maps for various fiber separations and particle sizes, and find that careful attention to particle size and configuration is necessary to obtain reproducible quantitative results for soft matter stretching experiments. PMID:26504632

Toward a High-Stability Coherent Population Trapping Cs Vapor-Cell Atomic Clock Using Autobalanced Ramsey Spectroscopy

NASA Astrophysics Data System (ADS)

Abdel Hafiz, Moustafa; Coget, Grégoire; Petersen, Michael; Rocher, Cyrus; Guérandel, Stéphane; Zanon-Willette, Thomas; de Clercq, Emeric; Boudot, Rodolphe

2018-06-01

Vapor-cell atomic clocks are widely appreciated for their excellent short-term fractional frequency stability and their compactness. However, they are known to suffer on medium and long time scales from significant frequency instabilities, generally attributed to light-induced frequency-shift effects. In order to tackle this limitation, we investigate the application of the recently proposed autobalanced Ramsey (ABR) interrogation protocol onto a pulsed hot-vapor Cs vapor-cell clock based on coherent population trapping (CPT). We demonstrate that the ABR protocol, developed initially to probe the one-photon resonance of quantum optical clocks, can be successfully applied to a two-photon CPT resonance. The applied method, based on the alternation of two successive Ramsey-CPT sequences with unequal free-evolution times and the subsequent management of two interconnected phase and frequency servo loops, is found to allow a relevant reduction of the clock-frequency sensitivity to laser-power variations. This original ABR-CPT approach, combined with the implementation of advanced electronics laser-power stabilization systems, yields the demonstration of a CPT-based Cs vapor-cell clock with a short-term fractional frequency stability at the level of 3.1×10 -13τ-1 /2 , averaging down to the level of 6 ×10-15 at 2000-s integration time. These encouraging performances demonstrate that the use of the ABR interrogation protocol is a promising option towards the development of high-stability CPT-based frequency standards. Such clocks could be attractive candidates in numerous applications including next-generation satellite-based navigation systems, secure communications, instrumentation, or defense systems.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Phenomenological theory of laser-plasma interaction in ``bubble'' regime

NASA Astrophysics Data System (ADS)

Kostyukov, I.; Pukhov, A.; Kiselev, S.

2004-11-01

The electron trapping in the "bubble" regime of laser-plasma interaction as proposed by Pukhov and Meyer-ter-Vehn [A. Pukhov and J. Meyer-ter-Vehn, Appl. Phys. B 74, 355 (2002)] is studied. In this regime the laser pulse generates a solitary plasma electron cavity: the bubble. It is free from the cold plasma electrons and runs with nearly light velocity. The present work discusses the form of the bubble and the spatial distribution of electromagnetic fields within the cavity. We extend the one-dimensional electron capture theory to the three-dimensional case. It is shown that the bubble can trap plasma electrons. The trapping condition is derived and the trapping cross section is estimated. Electron motion in the self-generated electron bunch is investigated. Estimates for the maximum of electron bunch energy and the bunch density are provided.

Real-time sub-Ångstrom imaging of reversible and irreversible conformations in rhodium catalysts and graphene

NASA Astrophysics Data System (ADS)

Kisielowski, Christian; Wang, Lin-Wang; Specht, Petra; Calderon, Hector A.; Barton, Bastian; Jiang, Bin; Kang, Joo H.; Cieslinski, Robert

2013-07-01

The dynamic responses of a rhodium catalyst and a graphene sheet are investigated upon random excitation with 80 kV electrons. An extraordinary electron microscope stability and resolution allow studying temporary atom displacements from their equilibrium lattice sites into metastable sites across projected distances as short as 60 pm. In the rhodium catalyst, directed and reversible atom displacements emerge from excitations into metastable interstitial sites and surface states that can be explained by single atom trajectories. Calculated energy barriers of 0.13 eV and 1.05 eV allow capturing single atom trapping events at video rates that are stabilized by the Rh [110] surface corrugation. Molecular dynamics simulations reveal that randomly delivered electrons can also reversibly enhance the sp3 and the sp1 characters of the sp2-bonded carbon atoms in graphene. The underlying collective atom motion can dynamically stabilize characteristic atom displacements that are unpredictable by single atom trajectories. We detect three specific displacements and use two of them to propose a path for the irreversible phase transformation of a graphene nanoribbon into carbene. Collectively stabilized atom displacements greatly exceed the thermal vibration amplitudes described by Debye-Waller factors and their measured dose rate dependence is attributed to tunable phonon contributions to the internal energy of the systems. Our experiments suggest operating electron microscopes with beam currents as small as zepto-amperes/nm2 in a weak-excitation approach to improve on sample integrity and allow for time-resolved studies of conformational object changes that probe for functional behavior of catalytic surfaces or molecules.

Trapping of muscle relaxant methocarbamol degradation product by complexation with copper(II) ion: Spectroscopic and quantum chemical studies

NASA Astrophysics Data System (ADS)

Mansour, Ahmed M.; Shehab, Ola R.

2014-07-01

Structural properties of methocarbamol (Mcm) were extensively studied both experimentally and theoretically using FT IR, 1H NMR, UV-Vis., geometry optimization, Mulliken charge, and molecular electrostatic potential. Stability arises from hyper-conjugative interactions, charge delocalization and H-bonding was analyzed using natural bond orbital (NBO) analysis. Mcm was decomposed in ethanol/water mixture at 80 °C to guaifenesin [(RS)-3-(2-methoxyphenoxy)propane-1,2-diol] and carbamate ion [NH2COO-], where the degradation mechanism was explained by trapping the carbamate ion via the complexation with copper(II) ion. The structure of the isolated complex ([Cu(NH2COO)2(H2O)]ṡ4H2O) was elucidated by spectral, thermal, and magnetic tools. Electronic spectra were discussed by TD-DFT and the descriptions of frontier molecular orbitals and the relocations of the electron density were determined. Calculated g-tensor values showed best agreement with experimental values from EPR when carried out using both the B3LYP and B3PW91 functional.

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE PAGES

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

2016-11-10

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1984-01-01

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

NASA Astrophysics Data System (ADS)

Mi, X.; Cady, J. V.; Zajac, D. M.; Stehlik, J.; Edge, L. F.; Petta, J. R.

2017-01-01

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

Pump-Probe Fragmentation Action Spectroscopy: A Powerful Tool to Unravel Light-Induced Processes in Molecular Photocatalysts.

PubMed

Imanbaew, Dimitri; Lang, Johannes; Gelin, Maxim F; Kaufhold, Simon; Pfeffer, Michael G; Rau, Sven; Riehn, Christoph

2017-05-08

We present a proof of concept that ultrafast dynamics combined with photochemical stability information of molecular photocatalysts can be acquired by electrospray ionization mass spectrometry combined with time-resolved femtosecond laser spectroscopy in an ion trap. This pump-probe "fragmentation action spectroscopy" gives straightforward access to information that usually requires high purity compounds and great experimental efforts. Results of gas-phase studies on the electronic dynamics of two supramolecular photocatalysts compare well to previous findings in solution and give further evidence for a directed electron transfer, a key process for photocatalytic hydrogen generation. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

PubMed

Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

2016-10-12

We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

Study of thermal aging effects on the conduction and trapping of charges in XLPE cable insulations under electron beam irradiation

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2018-08-01

The effect of thermal aging on the charging phenomena in cross-linked polyethylene (XLPE) has been studied under electron beam irradiation in scanning electron microscope (SEM). The dynamic variation of trapped charge represents the trapping process of XLPE under electron beam irradiation. We have found that the trapped charge variation can be approximated by a first order exponential function. The amount of trapped charge presents enhanced values at the beginning of aging at lower temperatures (80 °C and 100 °C). This suggests the diffusion of cross-linking by-products to the surface of sample that acts as traps for injected electrons. The oxidation which is a very important form of XLPE degradation has an effect at the advanced stage of the aging process. For higher temperatures (120 °C and 140 °C), the taken part process in the evolution of the trapped charge is the crystallinity increase at the beginning of aging leading to the trapped charge decreasing, and the polar groups generated by thermo-oxidation process at the end of aging leading to the trapped charge increase. Variations of leakage current according to the aging time have quite similar trends with the dielectric losses factor and consequently some correlations must be made between charging mechanisms and the electrical behaviour of XLPE under thermal aging.

Shaping of nested potentials for electron cooling of highly-charged ions in a cooler Penning trap

NASA Astrophysics Data System (ADS)

Paul, Stefan; Kootte, Brian; Lascar, Daniel; Gwinner, Gerald; Dilling, Jens; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is dedicated to mass spectrometry and decay spectroscopy of short-lived radioactive nuclides in a series of ion traps including a precision Penning trap. In order to boost the achievable precision of mass measurements TITAN deploys an Electron Beam Ion Trap (EBIT) providing Highly-Charged Ions (HCI). However, the charge breeding process in the EBIT leads to an increase in the ion bunch's energy spread which is detrimental to the overall precision gain. To reduce this effect a new cylindrical Cooler PEnning Trap (CPET) is being commissioned to sympathetically cool the HCI via a simultaneously trapped electron plasma. Simultaneous trapping of ions and electrons requires a high level of control over the nested potential landscape and sophisticated switching schemes for the voltages on CPET's multiple ring electrodes. For this purpose, we are currently setting up a new experimental control system for multi-channel voltage switching. The control system employs a Raspberry Pi communicating with a digital-to-analog board via a serial peripheral interface. We report on the implementation of the voltage control system and its performance with respect to electron and ion manipulation in CPET. University of British Columbia, Vancouver, BC, Canada.

Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

2017-08-01

In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

Pyrrole as a promising electrolyte additive to trap polysulfides for lithium-sulfur batteries

NASA Astrophysics Data System (ADS)

Yang, Wu; Yang, Wang; Song, Ailing; Gao, Lijun; Sun, Gang; Shao, Guangjie

2017-04-01

Lithium-sulfur batteries are a promising energy storage devices beyond conventional lithium ion batteries. However, the "shuttle effect" of soluble polysulfides is a major barrier between electrodes, resulting in rapid capacity fading. To address above issue, pyrrole has been investigated as an electrolyte additive to trap polysulfides. When pyrrole is added into electrolyte, a surface protective layer of polypyrrole can be formed on the sulfur cathode, which not only acts as a conductive agent to provide an effective electron conduction path but also acts as an absorbing agent and barrier layer suppressing the diffusion of polysulfide intermediates. The results demonstrate that an appropriate amount of pyrrole added into the electrolyte leads to excellent cycling stability and rate capability. Apparently, pyrrole is an effective additive for the entrapment of polysulfides of lithium-sulfur batteries.

De-trapping Magnetic Mirror Confined Fast Electrons by Shear Alfvén Waves

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.

2013-12-01

Highly energetic electrons produced naturally or artificially can be trapped in the Earth's radiation belts for months, posing a danger to valuable space satellites. Concepts that can lead to radiation belts mitigation have drawn a great deal of interest. We report a clear demonstration in a controlled lab experiment that a shear Alfvén wave can effectively de-trap energetic electrons confined by a magnetic mirror field. The experiment is performed in a quiescent afterglow plasma in the Large Plasma Device (LaPD) at UCLA. A hot electron ring, along with hard x-rays of energies of 100 keV ~ 3 MeV, is generated by 2nd harmonic electron cyclotron resonance heating and is trapped in a magnetic mirror field (Rmirror = 1.1 ~ 4, Bmin = 438 Gauss). A shear Alfvén wave (fAlfvén ~ 0.5 fci, BAlfvén / B0 ~ 0.1%), is launched with a rotating magnetic field antenna with arbitrary polarization. Irradiated by the Alfvén wave, the loss of electrons is modulated at fAlfvén. The periodic loss of electrons is found to be related to the spatial distortion of the hot electron ring, and continues even after the termination of the wave. The effect is found to be caused only by the right-hand (electron diamagnetic direction) circularly polarized component of the Alfvén wave. Hard x-ray tomography, constructed from more than 1000 chord projections at each axial location, shows electrons are lost in both the radial and axial direction. X-ray spectroscopy shows electrons over a broad range of energy de-trapped by the Alfvén wave, which suggests a non-resonant nature of the de-trapping process. The de-trapping process is found to be accompanied by electro-magnetic fluctuations in the frequency range of 1~5 fLH, which are also modulated at the frequency of the Alfvén wave. To exclude the possible role of whistler waves in this electron de-trapping process, whistler waves at these frequencies are launched with an antenna in absence of the Alfvén wave and no significant electron loss found. Research is supported by an ONR MURI award, and conducted at the Basic Plasma Science Facility at UCLA funded by DoE and NSF. A schematic plot of the experiment, with measured Alfvén wave magnetic field vector over-plotted. The plot shows a plane transverse to the background magnetic mirror field, in which a population of fast electrons is trapped and formed a hot electron ring. It has been observed the shear Alfvén wave can effectively de-trap the mirror confined fast electrons.

Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 Layers on Silicon

NASA Astrophysics Data System (ADS)

Wang, W. C.; Badylevich, M.; Adelmann, C.; Swerts, J.; Kittl, J. A.; Afanas'ev, V. V.

2012-12-01

The energy distribution of electron trap density in atomic layer deposited Al2O3, LaAl4Ox and GdyAl2-yO3 insulating layers was studied by using the exhaustive photodepopulation spectroscopy. Upon filling the traps by electron tunneling from Si substrate, a broad energy distribution of trap levels in the energy range 2-4 eV is found in all studied insulators with trap densities in the range of 1012 cm-2eV-1. The incorporation of La and Gd cations reduces the trap density in aluminate layers as compared to Al2O3. Crystallization of the insulator by the post-deposition annealing is found to increase the trap density while the energy distribution remains unchanged. The similar trap spectra in the Al2O3 and La or Gd aluminate layers suggest the common nature of the traps, probably originating from imperfections in the AlOx sub-network.

Poly(4-Vinylpyridine)-Based Interfacial Passivation to Enhance Voltage and Moisture Stability of Lead Halide Perovskite Solar Cells.

PubMed

Chaudhary, Bhumika; Kulkarni, Ashish; Jena, Ajay Kumar; Ikegami, Masashi; Udagawa, Yosuke; Kunugita, Hideyuki; Ema, Kazuhiro; Miyasaka, Tsutomu

2017-06-09

It is well known that the surface trap states and electronic disorders in the solution-processed CH 3 NH 3 PbI 3 perovskite film affect the solar cell performance significantly and moisture sensitivity of photoactive perovskite material limits its practical applications. Herein, we show the surface modification of a perovskite film with a solution-processable hydrophobic polymer (poly(4-vinylpyridine), PVP), which passivates the undercoordinated lead (Pb) atoms (on the surface of perovskite) by its pyridine Lewis base side chains and thereby eliminates surface-trap states and non-radiative recombination. Moreover, it acts as an electron barrier between the perovskite and hole-transport layer (HTL) to reduce interfacial charge recombination, which led to improvement in open-circuit voltage (V oc ) by 120 to 160 mV whereas the standard cell fabricated in same conditions showed V oc as low as 0.9 V owing to dominating interfacial recombination processes. Consequently, the power conversion efficiency (PCE) increased by 3 to 5 % in the polymer-modified devices (PCE=15 %) with V oc more than 1.05 V and hysteresis-less J-V curves. Advantageously, hydrophobicity of the polymer chain was found to protect the perovskite surface from moisture and improved stability of the non-encapsulated cells, which retained their device performance up to 30 days of exposure to open atmosphere (50 % humidity). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ion Temperature Measurements in an electron beam ion trap (EBIT)

NASA Astrophysics Data System (ADS)

Beiersdorfer, P.; Decaux, V.; Widmann, K.

1997-11-01

An electron beam ion trap consists of a Penning-type cylindrical trap traversed by a high-energy (<= 200 keV), high-density (Ne <= 10^13 cm-3) electron beam. Ions are trapped by the space charge potential of the electron beam, a static potential on the end electrodes, and a 3-T axial magnetic field [1]. The ions are heated by the electron beam and leave the trap once their kinetic energy suffices to overcome the potential barriers. Using high-resolution x-ray spectroscopy, we have made systematic measurements of the temperature of Ti^20+ and Cs^45+ ions in the trap [2]. The dependence of the ion temperature on operating parameters, such as trapping potential, beam current, and neutral gas pressure, will be presented. Temperatures as low as 15.4 ± 4.4 eV and as high as 2 keV were observed. *Work performed under the auspices of the U.S.D.o.E. by Lawrence Livermore National Laboratory under contract No. W-7405-ENG-48. [1] M. Levine et al., Phys. Scripta T22, 157 (1989). [2]P. Beiersdorfer et al., PRL 77, 5356 (1996); P. Beiersdorfer, in AIP Conf. Proc. No. 389, p. 121 (1997).

Long-Lived Pure Electron Plasma in Ring Trap-1

NASA Astrophysics Data System (ADS)

Saitoh, Haruhiko; Yoshida, Zensho; Morikawa, Junji; Watanabe, Sho; Yano, Yoshihisa; Suzuki, Junko

The Ring Trap-1 (RT-1) experiment succeeded in producing a long-lived (of the order 102 s), stable, non-neutral (pure electron) plasma. Electrons are confined by a magnetospheric dipole field. To eliminate a loss channel of the plasmas caused by support structures, a superconducting coil was magnetically levitated. This coil levitation drastically improved the confinement properties of the electron plasma compared to previous Prototype-Ring Trap (Proto-RT) experiments.

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Direct access to dithiobenzoate RAFT agent fragmentation rate coefficients by ESR spin-trapping.

PubMed

Ranieri, Kayte; Delaittre, Guillaume; Barner-Kowollik, Christopher; Junkers, Thomas

2014-12-01

The β-scission rate coefficient of tert-butyl radicals fragmenting off the intermediate resulting from their addition to tert-butyl dithiobenzoate-a reversible addition-fragmentation chain transfer (RAFT) agent-is estimated via the recently introduced electron spin resonance (ESR)-trapping methodology as a function of temperature. The newly introduced ESR-trapping methodology is critically evaluated and found to be reliable. At 20 °C, a fragmentation rate coefficient of close to 0.042 s(-1) is observed, whereas the activation parameters for the fragmentation reaction-determined for the first time-read EA = 82 ± 13.3 kJ mol(-1) and A = (1.4 ± 0.25) × 10(13) s(-1) . The ESR spin-trapping methodology thus efficiently probes the stability of the RAFT adduct radical under conditions relevant for the pre-equilibrium of the RAFT process. It particularly indicates that stable RAFT adduct radicals are indeed formed in early stages of the RAFT poly-merization, at least when dithiobenzoates are employed as controlling agents as stipulated by the so-called slow fragmentation theory. By design of the methodology, the obtained fragmentation rate coefficients represent an upper limit. The ESR spin-trapping methodology is thus seen as a suitable tool for evaluating the fragmentation rate coefficients of a wide range of RAFT adduct radicals. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

Nonlinear dissipative and dispersive electrostatic structures in unmagnetized relativistic electron-ion plasma with warm ions and trapped electrons

NASA Astrophysics Data System (ADS)

Masood, W.; Hamid, Naira; Ilyas, Iffat; Siddiq, M.

2017-06-01

In this paper, we have investigated electrostatic solitary and shock waves in an unmagnetized relativistic electron-ion (ei) plasma in the presence of warm ions and trapped electrons. In this regard, we have derived the trapped Korteweg-de Vries Burgers (TKdVB) equation using the small amplitude approximation method, which to the best of our knowledge has not been investigated in plasmas. Since the TKdVB equation involves fractional nonlinearity on account of trapped electrons, we have employed a smartly crafted extension of the tangent hyperbolic method and presented the solution of the TKdVB equation in this paper. The limiting cases of the TKdVB equation yield trapped Burgers (TB) and trapped Korteweg-de Vries (TKdV) equations. We have also presented the solutions of TB and TKdV equations. We have also explored how the plasma parameters affect the propagation characteristics of the nonlinear structures obtained for these modified nonlinear partial differential equations. We hope that the present work will open new vistas of research in the nonlinear plasma theory both in classical and quantum plasmas.

Demonstrating the Principle of an rf Paul Ion Trap

NASA Astrophysics Data System (ADS)

Johnson, Andrew; Rabchuk, James

2008-03-01

An rf ion trap uses a time-varying electric field to trap charged ions. This is useful in applications related to quantum computing and mass spectroscopy. There are several mechanical devices described in the literature which have attempted to provide illustrative demonstrations of the principle of rf ion traps, including a mechanically-rotating ``saddle trap'' and the vertically-driven, inverted pendulum^1,2. Neither demonstration, however, successfully demonstrates BOTH the sinusoidal variation in the electric potential of the rf trap AND the parametric stability of the ions in the trap described by Mathieu's equation. We have modified a design of a one-dimensional ponderomotive trap^3 so that it satisfies both criteria for demonstrating the principle of an rf Paul trap. Our studies indicate that trapping stability is highly sensitive to fluxuations in the driving frequency. Results from the demonstration apparatus constructed by the authors will be presented. ^1 Rueckner, W., et al., ``Rotating saddle Paul trap,'' Am. J. Phys., 63 (2), February 1995. ^2 Friedman, M.H., et al., ``The inverted pendulum: A mechanical analogue of a quadrupole mass filter,'' Am. J. Phys., 50 (10), October 1982. ^3 Johnson, A.K. and Rabchuk, J.A., ``A One-Dimensional Ponderomotive Trap,'' ISAAPT 2007 spring meeting, WIU, March 30, 2007.

Core/Shell Structured TiO2/CdS Electrode to Enhance the Light Stability of Perovskite Solar Cells.

PubMed

Hwang, Insung; Baek, Minki; Yong, Kijung

2015-12-23

In this work, enhanced light stability of perovskite solar cell (PSC) achieved by the introduction of a core/shell-structured CdS/TiO2 electrode and the related mechanism are reported. By a simple solution-based process (SILAR), a uniform CdS shell was coated onto the surface of a TiO2 layer, suppressing the activation of intrinsic trap sites originating from the oxygen vacancies of the TiO2 layer. As a result, the proposed CdS-PSC exhibited highly improved light stability, maintaining nearly 80% of the initial efficiency after 12 h of full sunlight illumination. From the X-ray diffraction analyses, it is suggested that the degradation of the efficiency of PSC during illumination occurs regardless of the decomposition of the perovskite absorber. Considering the light-soaking profiles of the encapsulated cells and the OCVD characteristics, it is likely that the CdS shell had efficiently suppressed the undesirable electron kinetics, such as trapping at the surface defects of the TiO2 and preventing the resultant charge losses by recombination. This study suggests that further complementary research on various effective methods for passivation of the TiO2 layer would be highly meaningful, leading to insight into the fabrication of PSCs stable to UV-light for a long time.

Properties and parameters of the electron beam injected into the mirror magnetic trap of a plasma accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreev, V. V., E-mail: temple18@mail.ru; Novitsky, A. A.; Vinnichenko, L. A.

2016-03-15

The parameters of the injector of an axial plasma beam injected into a plasma accelerator operating on the basis of gyroresonance acceleration of electrons in the reverse magnetic field are determined. The trapping of the beam electrons into the regime of gyroresonance acceleration is numerically simulated by the particle- in-cell method. The optimal time of axial injection of the beam into a magnetic mirror trap is determined. The beam parameters satisfying the condition of efficient particle trapping into the gyromagnetic autoresonance regime are found.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron holes in inhomogeneous magnetic field: Electron heating and electron hole evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasko, I. Y.; Space Research Institute of Russian Academy of Science, Moscow; Agapitov, O. V.

Electron holes are electrostatic non-linear structures widely observed in the space plasma. In the present paper, we analyze the process of energy exchange between electrons trapped within electron hole, untrapped electrons, and an electron hole propagating in a weakly inhomogeneous magnetic field. We show that as the electron hole propagates into the region with stronger magnetic field, trapped electrons are heated due to the conservation of the first adiabatic invariant. At the same time, the electron hole amplitude may increase or decrease in dependence on properties of distribution functions of trapped and untrapped resonant electrons. The energy gain of trappedmore » electrons is due to the energy losses of untrapped electrons and/or decrease of the electron hole energy. We stress that taking into account the energy exchange with untrapped electrons increases the lifetime of electron holes in inhomogeneous magnetic field. We illustrate the suggested mechanism for small-amplitude Schamel's [Phys. Scr. T2, 228–237 (1982)] electron holes and show that during propagation along a positive magnetic field gradient their amplitude should grow. Neglect of the energy exchange with untrapped electrons would result in the electron hole dissipation with only modest heating factor of trapped electrons. The suggested mechanism may contribute to generation of suprathermal electron fluxes in the space plasma.« less

Imaging electronic trap states in perovskite thin films with combined fluorescence and femtosecond transient absorption microscopy

DOE PAGES

Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane; ...

2016-04-22

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Vanadium substitution: A simple and economic way to improve UV sensing in ZnO

NASA Astrophysics Data System (ADS)

Srivastava, Tulika; Bajpai, Gaurav; Rathore, Gyanendra; Liu, Shun Wei; Biring, Sajal; Sen, Somaditya

2018-04-01

The UV sensing in pure ZnO is due to oxygen adsorption/desorption process from the ZnO surface. Vanadium doping improves the UV sensitivity of ZnO. The enhancement in UV sensitivity in vanadium-substituted ZnO is attributed to trapping and de-trapping of electrons at V4+ and V5+-related defect states. The V4+ state has an extra electron than the V5+ state. A V4+ to V5+ transformation happens with excitation of this electron to the conduction band, while a reverse trapping process liberates a visible light. An analytic study of response phenomenon reveals this trapping and de-trapping process.

New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakov, A. Y., E-mail: aypolyakov@gmail.com; Smirnov, N. B.; Govorkov, A. V.

2014-05-14

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versusmore » 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.« less

Photoluminescence, optically stimulated luminescence, and thermoluminescence study of RbMgF3:Eu2+

NASA Astrophysics Data System (ADS)

Dotzler, C.; Williams, G. V. M.; Rieser, U.; Robinson, J.

2009-01-01

Optically stimulated luminescence (OSL) and thermoluminescence are observed in polycrystalline RbMgF3:Eu2+ after x-ray, γ-ray, or β irradiation. The main electron traps are F-centers but there are other unidentified traps. The main hole traps at room temperature are probably Eu3+ and thermal or optical stimulation leads to electron-hole recombination at the Eu3+ site and Eu2+ emissions arising from P6J to S87/2 and 4f5d(Eg) to S87/2 transitions. We find that some of the electron traps can be emptied by infrared stimulation and all of the electron traps can be emptied by white light stimulation. The OSL dark decay is long and exceeds 5 days for traps that are emptied by white light stimulation after initial infrared bleaching. Our results show that this compound can be used as a radiation dosimeter for intermediate dose levels where the R87b self-dose does not significantly affect the dose reading.

Effect of fast electrons on the stability of resistive interchange modes in the TJ-II stellarator

DOE Office of Scientific and Technical Information (OSTI.GOV)

García, L.; Ochando, M. A.; Hidalgo, C.

2016-06-15

In this paper, we report on electromagnetic phenomena in low-β plasmas at the TJ-II stellarator, controlled by external heating. To understand the observations qualitatively, we introduce a simple modification of the standard resistive MHD equations, to include the potential impact of fast electrons on instabilities. The dominant instabilities of the modeling regime are resistive interchange modes, and calculations are performed in a configuration with similar characteristics as the TJ-II stellarator. The main effect of the trapping of fast electrons by magnetic islands induced by MHD instabilities is to increase the magnetic component of the fluctuations, changing the character of themore » instability to tearing-like and modifying the frequency of the modes. These effects seem to be consistent with some of the experimental observations.« less

Relativistic electrons and whistlers in Jupiter's magnetosphere

NASA Technical Reports Server (NTRS)

Barbosa, D. D.; Coroniti, F. V.

1976-01-01

The paper examines some of the consequences of relativistic electrons in stably trapped equilibrium with parallel propagating whistlers in the inner magnetosphere of Jupiter. Approximate scaling laws for the stably trapped electron flux and equilibrium wave intensity are derived, and the equatorial growth rate for whistlers is determined. It is shown that fluxes are near the stably trapped limit, which suggests that whistler intensities may be high enough to cause significant diffusion of electrons, accounting for the observed reduction of phase space densities.

Quantification of deep traps in nanocrystal solids, their electronic properties, and their influence on device behavior.

PubMed

Bozyigit, Deniz; Volk, Sebastian; Yarema, Olesya; Wood, Vanessa

2013-11-13

We implement three complementary techniques to quantify the number, energy, and electronic properties of trap states in nanocrystal (NC)-based devices. We demonstrate that, for a given technique, the ability to observe traps depends on the Fermi level position, highlighting the importance of a multitechnique approach that probes trap coupling to both the conduction and the valence bands. We then apply our protocol for characterizing traps to quantitatively explain the measured performances of PbS NC-based solar cells.

Hg(+) Frequency Standards

NASA Technical Reports Server (NTRS)

Prestage, John D.; Tjoelker, Robert L.; Maleki, Lute

2000-01-01

In this paper we review the development of Hg(+) microwave frequency standards for use in high reliability and continuous operation applications. In recent work we have demonstrated short-term frequency stability of 3 x 10(exp -14)/nu(sub tau) when a cryogenic oscillator of stability 2-3 x 10(exp 15) was used a the local oscillator. The trapped ion frequency standard employs a Hg-202 discharge lamp to optically pump the trapped Hg(+)-199 clock ions and a helium buffer gas to cool the ions to near room temperature. We describe a small Hg(+) ion trap based frequency standard with an extended linear ion trap (LITE) architecture which separates the optical state selection region from the clock resonance region. This separation allows the use of novel trap configurations in the resonance region since no optical pumping is carried out there. A method for measuring the size of an ion cloud inside a linear trap with a 12-rod trap is currently being investigated. At approx. 10(exp -12), the 2nd order Doppler shift for trapped mercury ion frequency standards is one of the largest frequency offsets and its measurement to the 1% level would represent an advance in insuring the very long-term stability of these standards to the 10(exp -14) or better level. Finally, we describe atomic clock comparison experiments that can probe for a time variation of the fine structure constant, alpha = e(exp 2)/2(pi)hc, at the level of 10(exp -20)/year as predicted in some Grand Unified String Theories.

Radiation Dose from Reentrant Electrons

NASA Technical Reports Server (NTRS)

Badhwar, G.D.; Cleghorn, T. E.; Watts, J.

2003-01-01

In estimating the crew exposures during an EVA, the contribution of reentrant electrons has always been neglected. Although the flux of these electrons is small compared to the flux of trapped electrons, their energy spectrum extends to several GeV compared to about 7 MeV for trapped electrons. This is also true of splash electrons. Using the measured reentrant electron energy spectra, it is shown that the dose contribution of these electrons to the blood forming organs (BFO) is more than 10 times greater than that from the trapped electrons. The calculations also show that the dose-depth response is a very slowly changing function of depth, and thus adding reasonable amounts of additional shielding would not significantly lower the dose to BFO.

Design and performance of an instrument for electron impact tandem mass spectrometry and action spectroscopy of mass/charge selected macromolecular ions stored in RF ion trap*

NASA Astrophysics Data System (ADS)

Ranković, Milos Lj.; Giuliani, Alexandre; Milosavljević, Aleksandar R.

2016-06-01

A new apparatus was designed, coupling an electron gun with a linear quadrupole ion trap mass spectrometer, to perform m/ z (mass over charge) selected ion activation by electron impact for tandem mass spectrometry and action spectroscopy. We present in detail electron tracing simulations of a 300 eV electron beam inside the ion trap, design of the mechanical parts, electron optics and electronic circuits used in the experiment. We also report examples of electron impact activation tandem mass spectra for Ubiquitin protein, Substance P and Melittin peptides, at incident electron energies in the range from 280 eV to 300 eV.

Positive Ion Induced Solidification of He4

NASA Astrophysics Data System (ADS)

Moroshkin, P.; Lebedev, V.; Weis, A.

2009-03-01

We have observed bulk solidification of He4 induced by nucleation on positive alkali ions in pressurized superfluid helium. The ions are extracted into the liquid from alkali-doped solid He by a static electric field. The experiments prove the existence of charged particles in a solid structure composed of doped He that was recently shown to coexist with superfluid helium below the He solidification pressure. This supports our earlier suggestion that the Coulomb interaction of positive ions surrounded by a solid He shell (snowballs) and electrons trapped in spherical cavities (electron bubbles), together with surface tension, is responsible for the stability of that structure against melting. We have determined the density of charges in the sample by two independent methods.

Effect of Pr 3+ concentration on thermoluminescence from K 2Y 1- xPr xF 5 crystals

NASA Astrophysics Data System (ADS)

Marcazzo, J.; Santiago, M.; Caselli, E.; Nariyama, N.; Khaidukov, N. M.

2004-06-01

Thermoluminescence dosimetric characteristics of K 2YF 5 crystals doped with Pr 3+ are reported for the first time. The efficiency of the 0.5 at.% Pr 3+ doped K 2YF 5 crystal has been found to be maximum for this concentration series and three times higher than that of the commercial dosimeter TLD-700. The thermoluminescence glow curve of this novel phosphor has no appreciable fading. Furthermore, it bears linear dose response and good stability after reutilization. According to these results, K 2YF 5:Pr 3+ appears to be a promising base for developing effective phosphors for TL solid state dosimetry. In this context, the spectral composition of the TL emission is also mentioned along with the values obtained by glow curve deconvolution for the trap parameters characterising electron trap centres involved in thermoluminescence.

Comparison of Microinstability Properties for Stellarator Magnetic Geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

G. Rewoldt; L.-P. Ku; W.M. Tang

2005-06-16

The microinstability properties of seven distinct magnetic geometries corresponding to different operating and planned stellarators with differing symmetry properties are compared. Specifically, the kinetic stability properties (linear growth rates and real frequencies) of toroidal microinstabilities (driven by ion temperature gradients and trapped-electron dynamics) are compared, as parameters are varied. The familiar ballooning representation is used to enable efficient treatment of the spatial variations along the equilibrium magnetic field lines. These studies provide useful insights for understanding the differences in the relative strengths of the instabilities caused by the differing localizations of good and bad magnetic curvature and of the presencemore » of trapped particles. The associated differences in growth rates due to magnetic geometry are large for small values of the temperature gradient parameter n identical to d ln T/d ln n, whereas for large values of n, the mode is strongly unstable for all of the different magnetic geometries.« less

Near-unity quantum yields from chloride treated CdTe colloidal quantum dots

DOE PAGES

Page, Robert C.; Espinobarro-Velazquez, Daniel; Leontiadou, Marina A.; ...

2014-10-27

Colloidal quantum dots (CQDs) are promising materials for novel light sources and solar energy conversion. However, trap states associated with the CQD surface can produce non-radiative charge recombination that significantly reduces device performance. Here a facile post-synthetic treatment of CdTe CQDs is demonstrated that uses chloride ions to achieve near-complete suppression of surface trapping, resulting in an increase of photoluminescence (PL) quantum yield (QY) from ca. 5% to up to 97.2 ± 2.5%. The effect of the treatment is characterised by absorption and PL spectroscopy, PL decay, scanning transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. We find thismore » process also dramatically improves the air-stability of the CQDs: before treatment the PL is largely quenched after 1 hour of air-exposure, whilst the treated samples showed a PL QY of nearly 50% after more than 12 hours.« less

Inductively guided circuits for ultracold dressed atoms

PubMed Central

Sinuco-León, German A.; Burrows, Kathryn A.; Arnold, Aidan S.; Garraway, Barry M.

2014-01-01

Recent progress in optics, atomic physics and material science has paved the way to study quantum effects in ultracold atomic alkali gases confined to non-trivial geometries. Multiply connected traps for cold atoms can be prepared by combining inhomogeneous distributions of DC and radio-frequency electromagnetic fields with optical fields that require complex systems for frequency control and stabilization. Here we propose a flexible and robust scheme that creates closed quasi-one-dimensional guides for ultracold atoms through the ‘dressing’ of hyperfine sublevels of the atomic ground state, where the dressing field is spatially modulated by inductive effects over a micro-engineered conducting loop. Remarkably, for commonly used atomic species (for example, 7Li and 87Rb), the guide operation relies entirely on controlling static and low-frequency fields in the regimes of radio-frequency and microwave frequencies. This novel trapping scheme can be implemented with current technology for micro-fabrication and electronic control. PMID:25348163

Analytic model of a laser-accelerated composite plasma target and its stability

NASA Astrophysics Data System (ADS)

Khudik, Vladimir; Shvets, Gennady

2013-10-01

A self-consistent analytical model of monoenergetic acceleration of a one and two-species ultrathin target irradiated by a circularly polarized laser pulse is developed. In the accelerated reference frame, the bulk plasma in the target is neutral and its parameters are assumed to be stationary. It is found that the structure of the target depends strongly on the temperatures of electrons and ions, which are both strongly influenced by the laser pulse pedestal. When the electron temperature is large, the hot electrons bounce back and forth inside the potential well formed by ponderomotive and electrostatic potentials while the heavy and light ions are forced-balanced by the electrostatic and non-inertial fields forming two separated layers. In the opposite limiting case when the ion temperature is large, the hot ions are trapped in the potential well formed by the ion-sheath's electric and non-inertial potentials while the cold electrons are forced-balanced by the electrostatic and ponderomotive fields. Using PIC simulations we have determined which scenario is realized in practice depending on the initial target structure and laser intensity. Target stability with respect to Rayleigh-Taylor instability will also be discussed. This work is supported by the US DOE grants DE-FG02-04ER41321 and DE-FG02-07ER54945.

Electron capture dissociation in a branched radio-frequency ion trap.

PubMed

Baba, Takashi; Campbell, J Larry; Le Blanc, J C Yves; Hager, James W; Thomson, Bruce A

2015-01-06

We have developed a high-throughput electron capture dissociation (ECD) device coupled to a quadrupole time-of-flight mass spectrometer using novel branched radio frequency ion trap architecture. With this device, a low-energy electron beam can be injected orthogonally into the analytical ion beam with independent control of both the ion and electron beams. While ions and electrons can interact in a "flow-through" mode, we observed a large enhancement in ECD efficiency by introducing a short ion trapping period at the region of ion and electron beam intersection. This simultaneous trapping mode still provides up to five ECD spectra per second while operating in an information-dependent acquisition workflow. Coupled to liquid chromatography (LC), this LC-ECD workflow provides good sequence coverage for both trypsin and Lys C digests of bovine serum albumin, providing ECD spectra for doubly charged precursor ions with very good efficiency.

Recent progress on beam stability study in the PSR

NASA Astrophysics Data System (ADS)

Wang, Tai-Sen F.; Channell, Paul J.; Cooper, Richard K.; Fitzgerald, Daniel H.; Hardek, Tom; Hutson, Richard; Jason, Andrew J.; Macek, Robert J.; Plum, Michael A.; Wilkinson, Carol

A fast transverse instability has been observed in the Los Alamos Proton Storage Ring (PSR) when the injected beam intensity reaches more than 2 (times) 10(exp 13) protons per pulse. Understanding the cause and control of this instability has taken on new importance as the neutron-scattering community considers the next generation of accelerator-driven spallation-neutron sources, which call for peak-proton intensities of 10(exp 14) per pulse or higher. Previous observations and theoretical studies indicate that the instability in the PSR is most likely driven by electrons trapped within the proton beam. Recent studies using an experimental electron-clearing system and voltage-biased pinger-electrodes for electron clearing and collection support this hypothesis. Experiments have also been performed to study the instability threshold when varying the electron production rate. Theoretical studies include a computer simulation of a simplified model for the e -- p instability and the investigation of possible electron confinement in the ring-element magnetic fields. This paper reports some recent results from these studies.

Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

NASA Astrophysics Data System (ADS)

Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

2017-01-01

Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application

NASA Astrophysics Data System (ADS)

Ho, Ching-Yuan; Chang, Yaw-Jen

2016-02-01

Both aluminum (Al) and copper (Cu), acting as transmission lines in the hydrogenated amorphous silicon of a thin film transistor (a-Si:H TFT), were studied to investigate electrical degradation including electron-migration (EM) and threshold voltage (Vt) stability and recovery performance. Under long-term current stress, the Cu material exhibited excellent resistance to EM properties, but a passivated SiNx crack was observed due to fast heat conductivity. By applying electrical stress on the gate and drain for 5 × 104 s, the power-law time dependency of the threshold voltage shift (ΔVt) indicated that the defective state creation dominated the TFT device's instability. The presence of drain stress increased the overall ΔVt because the high longitudinal field induced impact ionization and then, enhanced hot-carrier-induced electron trapping within the gate SiNx dielectric. An annealing effect prompted a stressed a-Si:H TFT back to virgin status. This study proposes better ΔVt stability and excellent resistance against electron-migration in a Cu gate device which can be considered as a candidate for a transmission line on prolonged TFT applications.

Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

NASA Astrophysics Data System (ADS)

Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

2018-04-01

Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

A small electron beam ion trap/source facility for electron/neutral–ion collisional spectroscopy in astrophysical plasmas

NASA Astrophysics Data System (ADS)

Liang, Gui-Yun; Wei, Hui-Gang; Yuan, Da-Wei; Wang, Fei-Lu; Peng, Ji-Min; Zhong, Jia-Yong; Zhu, Xiao-Long; Schmidt, Mike; Zschornack, Günter; Ma, Xin-Wen; Zhao, Gang

2018-01-01

Spectra are fundamental observation data used for astronomical research, but understanding them strongly depends on theoretical models with many fundamental parameters from theoretical calculations. Different models give different insights for understanding a specific object. Hence, laboratory benchmarks for these theoretical models become necessary. An electron beam ion trap is an ideal facility for spectroscopic benchmarks due to its similar conditions of electron density and temperature compared to astrophysical plasmas in stellar coronae, supernova remnants and so on. In this paper, we will describe the performance of a small electron beam ion trap/source facility installed at National Astronomical Observatories, Chinese Academy of Sciences.We present some preliminary experimental results on X-ray emission, ion production, the ionization process of trapped ions as well as the effects of charge exchange on the ionization.

Dust Acoustic Solitary Waves in Dusty Plasma with Trapped Electrons Having Different Temperature Nonthermal Ions

NASA Astrophysics Data System (ADS)

Deka, Manoj Kr.

2016-12-01

In this report, a detailed investigation on the study of dust acoustics solitary waves solution with negatively dust charge fluctuation in dusty plasma corresponding to lower and higher temperature nonthermal ions with trapped electrons is presented. We consider temporal variation of dust charge as a source of dissipation term to derive the lower order modified Kadomtsev-Petviashvili equation by using the reductive perturbation technique. Solitary wave solution is obtained with the help of sech method in presence of trapped electrons and low (and high) temperature nonthermal ions. Both nonthermality of ions and trapped state of the electrons are found to have an imperative control on the nonlinear coefficient, dissipative coefficient as well as height of the wave potential.

ION SOURCE

DOEpatents

Leland, W.T.

1960-01-01

The ion source described essentially eliminater the problem of deposits of nonconducting materials forming on parts of the ion source by certain corrosive gases. This problem is met by removing both filament and trap from the ion chamber, spacing them apart and outside the chamber end walls, placing a focusing cylinder about the filament tip to form a thin collimated electron stream, aligning the cylinder, slits in the walls, and trap so that the electron stream does not bombard any part in the source, and heating the trap, which is bombarded by electrons, to a temperature hotter than that in the ion chamber, so that the tendency to build up a deposit caused by electron bombardment is offset by the extra heating supplied only to the trap.

Radiation dose from reentrant electrons

NASA Technical Reports Server (NTRS)

Badhwar, G. D.; Watts, J.; Cleghorn, T. E.

2001-01-01

In estimating the crew exposures during an extra vehicular activity (EVA), the contribution of reentrant electrons has always been neglected. Although the flux of these electrons is small compared to the flux of trapped electrons, their energy spectrum extends to several GeV compared to about 7 MeV for trapped electrons. This is also true of splash electrons. Using the measured reentrant electron energy spectra, it is shown that the dose contribution of these electrons to the blood forming organs (BFO) is more that 10 times greater than that from the trapped electrons. The calculations also show that the dose-depth response is a very slowly changing function of depth, and thus adding reasonable amounts of additional shielding would not significantly lower the dose to BFO. Published by Elsevier Science Ltd.

A cooler Penning trap for the TITAN mass measurement facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, U.; Kootte, B.; Good, M.

The TITAN facility at TRIUMF makes use of highly charged ions, charge-bred in an electron beam ion trap, to carry out accurate mass measurements on radioactive isotopes. We report on our progress to develop a cooler Penning trap, CPET, which aims at reducing the energy spread of the ions to ≈ 1 eV/charge prior to injection into the mass measurement trap. In off-line mode, we can now trap electron plasmas for minutes, and we observe the damping of the m = 1 diocotron plasma mode within ≈ 2 s.

Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

NASA Astrophysics Data System (ADS)

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

2018-03-01

Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

PubMed

Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

2016-07-20

We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

Characterisation of β-tricalcium phosphate-based bone substitute materials by electron paramagnetic resonance spectroscopy

NASA Astrophysics Data System (ADS)

Matković, Ivo; Maltar-Strmečki, Nadica; Babić-Ivančić, Vesna; Dutour Sikirić, Maja; Noethig-Laslo, Vesna

2012-10-01

β-TCP based materials are frequently used as dental implants. Due to their resorption in the body and direct contact with tissues, in order to inactivate bacteria, fungal spores and viruses, they are usually sterilized by γ-irradiation. However, the current literature provides little information about effects of the γ-irradiation on the formation and stability of the free radicals in the bone graft materials during and after sterilization procedure. In this work five different bone graft substitution materials, composed of synthetic beta tricalcium phosphate (β-TCP) and hydroxyapatite (HAP) present in the market were characterized by electron paramagnetic resonance (EPR) spectroscopy, X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis (TGA). Paramagnetic species Mn2+, Fe3+, trapped H-atoms and CO2- radicals were detected in the biphasic material (60% HAP, 40% β-TCP), while in β-TCP materials only Mn2+ andor trapped hydrogen atoms were detected. EPR analysis revealed the details of the structure of these materials at the atomic level. The results have shown that EPR spectroscopy is a method which can be used to improve the quality control of bone graft materials after syntering, processing and sterilization procedure.

Electronic circuit provides automatic level control for liquid nitrogen traps

NASA Technical Reports Server (NTRS)

Turvy, R. R.

1968-01-01

Electronic circuit, based on the principle of increased thermistor resistance corresponding to decreases in temperature provides an automatic level control for liquid nitrogen cold traps. The electronically controlled apparatus is practically service-free, requiring only occasional reliability checks.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Trapped Field Characteristics of Stacked YBCO Thin Plates for Compact NMR Magnets: Spatial Field Distribution and Temporal Stability

PubMed Central

Hahn, Seungyong; Kim, Seok Beom; Ahn, Min Cheol; Voccio, John; Bascuñán, Juan; Iwasa, Yukikazu

2010-01-01

This paper presents experimental and analytical results of trapped field characteristics of a stack of square YBCO thin film plates for compact NMR magnets. Each YBCO plate, 40 mm × 40 mm × 0.08 mm, has a 25-mm diameter hole at its center. A total of 500 stacked plates were used to build a 40-mm long magnet. Its trapped field, in a bath of liquid nitrogen, was measured for spatial field distribution and temporal stability. Comparison of measured and analytical results is presented: the effects on trapped field characteristics of the unsaturated nickel substrate and the non-uniform current distribution in the YBCO plate are discussed. PMID:20585463

Instability due to trapped electrons in magnetized multi-ion dusty plasmas

NASA Astrophysics Data System (ADS)

Haider, M. M.; Ferdous, T.; Duha, S. S.

2015-05-01

An attempt has been made to find out the effects of trapped electrons in dust-ion-acoustic solitary waves in magnetized multi-ion plasmas, as in most space plasmas, the hot electrons follow the trapped/vortex-like distribution. To do so, we have derived modified Zakharov-Kuznetsov equation using reductive perturbation method and its solution. A small- perturbation technique was employed to find out the instability criterion and growth rate of such a wave.

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

The trapping and distribution of charge in polarized polymethylmethacrylate under electron-beam irradiation

NASA Astrophysics Data System (ADS)

Song, Z. G.; Gong, H.; Ong, C. K.

1997-06-01

A scanning electron microscope (SEM) mirror-image method (MIM) is employed to investigate the charging behaviour of polarized polymethylmethacrylate (PMMA) under electron-beam irradiation. An ellipsoid is used to model the trapped charge distribution and a fitting method is employed to calculate the total amount of the trapped charge and its distribution parameters. The experimental results reveal that the charging ability decreases with increasing applied electric field, which polarizes the PMMA sample, whereas the trapped charge distribution is elongated along the direction of the applied electric field and increases with increasing applied electric field. The charges are believed to be trapped in some localization states, of activation energy and radius estimated to be about 19.6 meV and 0022-3727/30/11/004/img6, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Izumi, Kohei; Otani, Yohei; Ishizaki, Hiroki; Ono, Toshiro

2012-09-01

This paper reports on the thermal improvement of Si3N4/GeNx/Ge structures. After the Si3N4 (5 nm)/GeNx (2 nm) stacks were prepared on Ge substrates by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature, they were thermally annealed in atmospheric N2 + 10% H2 ambient at temperatures from 400 to 600 °C. It was demonstrated that the electronic properties of the GeNx/Ge interfaces were thermally improved at temperatures of up to 500 °C with a minimum interface trap density (Dit) of ˜1×1011 cm-2 eV-1 near the Ge midgap, whereas the interface properties were slightly degraded after annealing at 600 °C with a minimum Dit value of ˜4×1011 cm-2 eV-1.

Experiments to trap dust particles by a wire simulating an electron beam

NASA Astrophysics Data System (ADS)

Saeki, Hiroshi; Momose, Takashi; Ishimaru, Hajime

1991-11-01

Motion of trapped dust particles has been previously analyzed using high-energy bremsstrahlung data obtained during dust trapping in the TRISTAN accumulation ring. Because it is difficult to observe the actual motions of dust particles trapped in an electron beam due to the strong synchrotron light background, we carried out experiments to trap sample dust particles with a Cu wire simulating an electron beam. A negative potential was slowly applied to the wire using a high voltage dc power supply. Motions of dust particles trapped by the wire were recorded with a video camera system. In an experiment using a Cu wire (1.5 mm in diameter) with no magnetic field, the charged dust particle made vertical oscillation about the wire. In another experiment using the same wire but with a vertical magnetic field (0.135 T) simulating a bending magnetic field, both vertical and horizontal oscillating motions perpendicular to the wire were observed. Furthermore, it was found that the dust particle moved in the longitudinal direction of the wire in the bending magnetic field. Therefore, it is expected that charged dust particles trapped by the electric field of the electron beam oscillate vertically where there is no magnetic field in the TRISTAN accumulation ring. It is also expected that trapped dust particles where there is a bending magnetic field oscillate horizontally and vertically as the particle drifts in a longitudinal direction along the ring.

MATS and LaSpec: High-precision experiments using ion traps and lasers at FAIR

NASA Astrophysics Data System (ADS)

Rodríguez, D.; Blaum, K.; Nörtershäuser, W.; Ahammed, M.; Algora, A.; Audi, G.; Äystö, J.; Beck, D.; Bender, M.; Billowes, J.; Block, M.; Böhm, C.; Bollen, G.; Brodeur, M.; Brunner, T.; Bushaw, B. A.; Cakirli, R. B.; Campbell, P.; Cano-Ott, D.; Cortés, G.; Crespo López-Urrutia, J. R.; Das, P.; Dax, A.; de, A.; Delheij, P.; Dickel, T.; Dilling, J.; Eberhardt, K.; Eliseev, S.; Ettenauer, S.; Flanagan, K. T.; Ferrer, R.; García-Ramos, J.-E.; Gartzke, E.; Geissel, H.; George, S.; Geppert, C.; Gómez-Hornillos, M. B.; Gusev, Y.; Habs, D.; Heenen, P.-H.; Heinz, S.; Herfurth, F.; Herlert, A.; Hobein, M.; Huber, G.; Huyse, M.; Jesch, C.; Jokinen, A.; Kester, O.; Ketelaer, J.; Kolhinen, V.; Koudriavtsev, I.; Kowalska, M.; Krämer, J.; Kreim, S.; Krieger, A.; Kühl, T.; Lallena, A. M.; Lapierre, A.; Le Blanc, F.; Litvinov, Y. A.; Lunney, D.; Martínez, T.; Marx, G.; Matos, M.; Minaya-Ramirez, E.; Moore, I.; Nagy, S.; Naimi, S.; Neidherr, D.; Nesterenko, D.; Neyens, G.; Novikov, Y. N.; Petrick, M.; Plaß, W. R.; Popov, A.; Quint, W.; Ray, A.; Reinhard, P.-G.; Repp, J.; Roux, C.; Rubio, B.; Sánchez, R.; Schabinger, B.; Scheidenberger, C.; Schneider, D.; Schuch, R.; Schwarz, S.; Schweikhard, L.; Seliverstov, M.; Solders, A.; Suhonen, M.; Szerypo, J.; Taín, J. L.; Thirolf, P. G.; Ullrich, J.; van Duppen, P.; Vasiliev, A.; Vorobjev, G.; Weber, C.; Wendt, K.; Winkler, M.; Yordanov, D.; Ziegler, F.

2010-05-01

Nuclear ground state properties including mass, charge radii, spins and moments can be determined by applying atomic physics techniques such as Penning-trap based mass spectrometry and laser spectroscopy. The MATS and LaSpec setups at the low-energy beamline at FAIR will allow us to extend the knowledge of these properties further into the region far from stability. The mass and its inherent connection with the nuclear binding energy is a fundamental property of a nuclide, a unique “fingerprint”. Thus, precise mass values are important for a variety of applications, ranging from nuclear-structure studies like the investigation of shell closures and the onset of deformation, tests of nuclear mass models and mass formulas, to tests of the weak interaction and of the Standard Model. The required relative accuracy ranges from 10-5 to below 10-8 for radionuclides, which most often have half-lives well below 1 s. Substantial progress in Penning trap mass spectrometry has made this method a prime choice for precision measurements on rare isotopes. The technique has the potential to provide high accuracy and sensitivity even for very short-lived nuclides. Furthermore, ion traps can be used for precision decay studies and offer advantages over existing methods. With MATS (Precision Measurements of very short-lived nuclei using an A_dvanced Trapping System for highly-charged ions) at FAIR we aim to apply several techniques to very short-lived radionuclides: High-accuracy mass measurements, in-trap conversion electron and alpha spectroscopy, and trap-assisted spectroscopy. The experimental setup of MATS is a unique combination of an electron beam ion trap for charge breeding, ion traps for beam preparation, and a high-precision Penning trap system for mass measurements and decay studies. For the mass measurements, MATS offers both a high accuracy and a high sensitivity. A relative mass uncertainty of 10-9 can be reached by employing highly-charged ions and a non-destructive Fourier-Transform Ion-Cyclotron-Resonance (FT-ICR) detection technique on single stored ions. This accuracy limit is important for fundamental interaction tests, but also allows for the study of the fine structure of the nuclear mass surface with unprecedented accuracy, whenever required. The use of the FT-ICR technique provides true single ion sensitivity. This is essential to access isotopes that are produced with minimum rates which are very often the most interesting ones. Instead of pushing for highest accuracy, the high charge state of the ions can also be used to reduce the storage time of the ions, hence making measurements on even shorter-lived isotopes possible. Decay studies in ion traps will become possible with MATS. Novel spectroscopic tools for in-trap high-resolution conversion-electron and charged-particle spectroscopy from carrier-free sources will be developed, aiming e.g. at the measurements of quadrupole moments and E0 strengths. With the possibility of both high-accuracy mass measurements of the shortest-lived isotopes and decay studies, the high sensitivity and accuracy potential of MATS is ideally suited for the study of very exotic nuclides that will only be produced at the FAIR facility.Laser spectroscopy of radioactive isotopes and isomers is an efficient and model-independent approach for the determination of nuclear ground and isomeric state properties. Hyperfine structures and isotope shifts in electronic transitions exhibit readily accessible information on the nuclear spin, magnetic dipole and electric quadrupole moments as well as root-mean-square charge radii. The dependencies of the hyperfine splitting and isotope shift on the nuclear moments and mean square nuclear charge radii are well known and the theoretical framework for the extraction of nuclear parameters is well established. These extracted parameters provide fundamental information on the structure of nuclei at the limits of stability. Vital information on both bulk and valence nuclear properties are derived and an exceptional sensitivity to changes in nuclear deformation is achieved. Laser spectroscopy provides the only mechanism for such studies in exotic systems and uniquely facilitates these studies in a model-independent manner.The accuracy of laser-spectroscopic-determined nuclear properties is very high. Requirements concerning production rates are moderate; collinear spectroscopy has been performed with production rates as few as 100 ions per second and laser-desorption resonance ionization mass spectroscopy (combined with β-delayed neutron detection) has been achieved with rates of only a few atoms per second.This Technical Design Report describes a new Penning trap mass spectrometry setup as well as a number of complementary experimental devices for laser spectroscopy, which will provide a complete system with respect to the physics and isotopes that can be studied. Since MATS and LaSpec require high-quality low-energy beams, the two collaborations have a common beamline to stop the radioactive beam of in-flight produced isotopes and prepare them in a suitable way for transfer to the MATS and LaSpec setups, respectively.

Identifying the distinct features of geometric structures for hole trapping to generate radicals on rutile TiO₂(110) in photooxidation using density functional theory calculations with hybrid functional.

PubMed

Wang, Dong; Wang, Haifeng; Hu, P

2015-01-21

Using density functional theory calculations with HSE 06 functional, we obtained the structures of spin-polarized radicals on rutile TiO2(110), which is crucial to understand the photooxidation at the atomic level, and further calculate the thermodynamic stabilities of these radicals. By analyzing the results, we identify the structural features for hole trapping in the system, and reveal the mutual effects among the geometric structures, the energy levels of trapped hole states and their hole trapping capacities. Furthermore, the results from HSE 06 functional are compared to those from DFT + U and the stability trend of radicals against the number of slabs is tested. The effect of trapped holes on two important steps of the oxygen evolution reaction, i.e. water dissociation and the oxygen removal, is investigated and discussed.

Generation of forerunner electron beam during interaction of ion beam pulse with plasma

NASA Astrophysics Data System (ADS)

Hara, Kentaro; Kaganovich, Igor D.; Startsev, Edward A.

2018-01-01

The long-time evolution of the two-stream instability of a cold tenuous ion beam pulse propagating through the background plasma with density much higher than the ion beam density is investigated using a large-scale one-dimensional electrostatic kinetic simulation. The three stages of the instability are investigated in detail. After the initial linear growth and saturation by the electron trapping, a portion of the initially trapped electrons becomes detrapped and moves ahead of the ion beam pulse forming a forerunner electron beam, which causes a secondary two-stream instability that preheats the upstream plasma electrons. Consequently, the self-consistent nonlinear-driven turbulent state is set up at the head of the ion beam pulse with the saturated plasma wave sustained by the influx of the cold electrons from upstream of the beam that lasts until the final stage when the beam ions become trapped by the plasma wave. The beam ion trapping leads to the nonlinear heating of the beam ions that eventually extinguishes the instability.

Electron beam ion source and electron beam ion trap (invited).

PubMed

Becker, Reinard; Kester, Oliver

2010-02-01

The electron beam ion source (EBIS) and its trap variant [electron beam ion trap (EBIT)] celebrated their 40th and 20th anniversary, respectively, at the EBIS/T Symposium 2007 in Heidelberg. These technologically challenging sources of highly charged ions have seen a broad development in many countries over the last decades. In contrast to most other ion sources the recipe of improvement was not "sorcery" but a clear understanding of the physical laws and obeying the technological constraints. This review will report important achievements of the past as well as promising developments in the future.

On the nonlinear trapping nature of undamped, coherent structures in collisionless plasmas and its impact on stability

NASA Astrophysics Data System (ADS)

Schamel, Hans; Mandal, Debraj; Sharma, Devendra

2017-03-01

An outstanding notion for collisionless plasmas is the essential nonlinear character of their coherent structures, which in the stationary, weak amplitude limit are described by a continuum of cnoidal electron and ion hole modes governed by a multiparametric nonlinear dispersion relation. The well-known discrete structure of undamped linear plasma modes is seamlessly embedded in this nonlinear continuum as the microscopic texture of plasma begins to reveal itself in the high temperature collisionless plasma limit. This transforms the linear-threshold-based operating mechanism of plasma turbulence into a fundamental nonlinear, multifaceted one. Based on a comprehensive three-level description of increasing profundity, a proof of this novel dictum is presented, which makes use of the joint properties of such structures, their coherency and stationarity, and uses in succession a fluid, linear Vlasov and a full Vlasov description. It unifies discrete and continuum limits by resolving the inevitable resonant region and shows that coherent electrostatic equilibria are generally controlled by kinetic particle trapping and are hence fundamentally nonlinear. By forging a link between damped and growing wave solutions, these modes render plasma stability complex and difficult to evaluate due to the entangled pattern of the stability boundary in function and parameter space, respectively. A direct consequence is the existence of negative energy modes of arbitrarily small amplitudes in the subcritical region of the two-stream instability as well as the failure of linear Landau (Vlasov, van Kampen) theory, whenever resonant particles are involved, in addressing the onset of instability in a current-carrying plasma. Responsible for this subtle phase space behavior is hence the thresholdless omnipresence of the trapping nonlinearity originating from coherency. A high resolution, exact-mass-ratio, multispecies, and collisionless plasma simulation is employed to illustrate exemplarily how tiny seed fluctuations in phase-space can act as a triggering agent for a subcritical plasma excitation verifying an access to these modes in the noisy, collisionless plasma limit.

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

PubMed Central

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P. H.; Bedzyk, Michael J.; Ferragut, Rafael; Marks, Tobin J.; Facchetti, Antonio

2015-01-01

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. PMID:25733848

Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

PubMed

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

2015-03-17

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Synthesis of CdS/BiOBr nanosheets composites with efficient visible-light photocatalytic activity

NASA Astrophysics Data System (ADS)

Cui, Haojie; Zhou, Yawen; Mei, Jinfeng; Li, Zhongyu; Xu, Song; Yao, Chao

2018-01-01

The efficient charge separation action and visible-light responding could enhance the photocatalytic property of photocatalysts. In the present study, novel CdS/BiOBr nanosheets composites were synthesized by a three-step process. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (FE-SEM), diffuse reflection spectroscopy (DRS), Raman spectroscopy and photoluminescence (PL). Under visible-light irradiation, the as-prepared CdS nanoparticles decorated BiOBr nanosheets exhibited the excellent photocatalytic activity and high stability for malachite green (MG) degradation. The photodegradation achieved maximum degradation efficiency (99%) using CdS/BiOBr-3 composites as photocatalyst. Furthermore, the possible photocatalytic mechanism upon CdS/BiOBr composites was also discussed through radical and holes trapping experiments. The heterostructure between CdS and BiOBr improved photocatalytic activity dramatically, which greatly promoted migration rate of the photoinduced electrons besides limiting the recombination of photogenerated electron-hole pairs.

Improved Linear-Ion-Trap Frequency Standard

NASA Technical Reports Server (NTRS)

Prestage, John D.

1995-01-01

Improved design concept for linear-ion-trap (LIT) frequency-standard apparatus proposed. Apparatus contains lengthened linear ion trap, and ions processed alternately in two regions: ions prepared in upper region of trap, then transported to lower region for exposure to microwave radiation, then returned to upper region for optical interrogation. Improved design intended to increase long-term frequency stability of apparatus while reducing size, mass, and cost.

Gas-phase conformation-specific photofragmentation of proline-containing peptide ions.

PubMed

Kim, Tae-Young; Valentine, Stephen J; Clemmer, David E; Reilly, James P

2010-08-01

Singly-protonated proline-containing peptides with N-terminal arginine are photodissociated with vacuum ultraviolet (VUV) light in an ESI linear ion trap/orthogonal-TOF (LIT/o-TOF). When proline is the nth residue from the N-terminus, unusual b(n) + 2 and a(n) + 2 ions are observed. Their formation is explained by homolytic cleavage of the C(alpha)-C bond in conjunction with a rearrangement of electrons and an amide hydrogen. The latter is facilitated by a proline-stabilized gas-phase peptide conformation. Copyright 2010 American Society for Mass Spectrometry. Published by Elsevier Inc. All rights reserved.

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

NASA Technical Reports Server (NTRS)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

On the conditions for nonlinear growth in magnetospheric chorus and triggered emissions

NASA Astrophysics Data System (ADS)

Gołkowski, Mark; Gibby, Andrew R.

2017-09-01

The nonlinear whistler mode instability associated with magnetospheric chorus and VLF triggered emissions continues to be poorly understood. Following up on formulations of other authors, an analytical exploration of the stability of the phenomenon from a new vantage point is given. This exploration derives an additional requirement on the anisotropy of the energetic electron distribution relative to the linear treatment of the instability, and shows that the nonlinear instability is most favorable to increasing growth rate when electrons become initially trapped in the wave potential of a constant frequency wave. These results imply that the initiation of the nonlinear instability at the equator requires a positive frequency sweep rate, while the initiation of the instability by a constant frequency triggering wave must occur at a location downstream of the geomagnetic equator.

Microfabricated ion trap array

DOEpatents

Blain, Matthew G [Albuquerque, NM; Fleming, James G [Albuquerque, NM

2006-12-26

A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

Stability study of solution-processed zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Zhang, Xue; Ndabakuranye, Jean Pierre; Kim, Dong Wook; Choi, Jong Sun; Park, Jaehoon

2015-11-01

In this study, the environmental dependence of the electrical stability of solution-processed n-channel zinc tin oxide (ZTO) thin-film transistors (TFTs) is reported. Under a prolonged negative gate bias stress, a negative shift in threshold voltage occurs in atmospheric air, whereas a negligible positive shift in threshold voltage occurs under vacuum. In the positive bias-stress experiments, a positive shift in threshold voltage was invariably observed both in atmospheric air and under vacuum. In this study, the negative gate-bias-stress-induced instability in atmospheric air is explained through an internal potential in the ZTO semiconductor, which can be generated owing to the interplay between H2O molecules and majority carrier electrons at the surface of the ZTO film. The positive bias-stress-induced instability is ascribed to electron-trapping phenomenon in and around the TFT channel region, which can be further augmented in the presence of air O2 molecules. These results suggest that the interaction between majority carriers and air molecules will have crucial implications for a reliable operation of solution-processed ZTO TFTs. [Figure not available: see fulltext.

Development of a 10 MHz oscillator working with an LGT crystal resonator: preliminary results.

PubMed

Imbaud, Joël; Galliou, Serge; Romand, Jean Pierre; Abbe, Philippe; Bourquin, Roger

2008-09-01

Presently, to our knowledge, measurement of the noise of langatate (LGT) crystal oscillators has not previously been reported. First results of such a measurement are given in this paper. They have been obtained from 10 MHz resonator prototypes tested with a dedicated electronics. The main steps of the resonator manufacturing are described in this paper. Good quality factors, close to 1.4 10(6), have already been achieved on the 5th overtone of the thickness shear mode of LGT Y cuts, even if the energy trapping should still be optimized. The motional parameters of these resonator prototypes are quite different from those of usual quartz crystal resonators. As a consequence, dedicated sustaining electronics have been designed. The explored options are reported to justify the implemented one. Moreover, the high thermal sensitivity of LGT crystal resonators (parabolic f-T curve) requires that particular attention be paid to the oven thermal stability. This important feature is also pointed out in the paper. The preliminary version of the resulting system exhibits a relative frequency stability of 6 10(-12).

Segregation and trapping of oxygen vacancies near the SrTiO 3Σ3 (112) [110] tilt grain boundary

DOE PAGES

Liu, Bin; Cooper, Valentino R.; Zhang, Yanwen; ...

2015-03-21

In nanocrystalline materials, structural discontinuities at grain boundaries (GBs) and the segregation of point defects to these GBs play a key role in defining the structural stability of a material, as well as its macroscopic electrical/mechanical properties. In this study, the segregation of oxygen vacancies near the Σ3 (1 1 2) [¯110] tilt GB in SrTiO 3 is explored using density functional theory. We find that oxygen vacancies segregate toward the GB, preferring to reside within the next nearest-neighbor layer. This oxygen vacancy segregation is found to be crucial for stabilizing this tilt GB. Furthermore, we find that the migrationmore » barriers of oxygen vacancies diffusing toward the first nearest-neighbor layer of the GB are low, while those away from this layer are very high. Furthermore, the segregation and trapping of the oxygen vacancies in the first nearest-neighbor layer of GBs are attributed to the large local distortions, which can now accommodate the preferred sixfold coordination of Ti. These results suggest that the electronic, transport, and capacitive properties of SrTiO 3 can be engineered through the control of GB structure and grain size or layer thickness.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samskog, P.; Kispert, L.D.; Lund, A.

Three different radicals were identified by EPR in x-ray irradiated single crystals of trehalose at 3 K. The species are the trapped electron, a hydroxy alkyl radical, and an alkoxy radical. The electron is trapped in an intermolecular site formed by two hydroxyl groups, one on the carbohydrate and the other on a water molecule as evidenced by the anisotropic proton hyperfine couplings. A geometric model for the trapping site is presented. The trapped electron decays by cleavage of an OH bond and the liberated hydrogen atom abstracts another hydrogen atom from an adjacent carbon atom forming a hydroxy alkylmore » radical. The site of the alkoxy radical has been identified. The primary reaction mechanism is discussed.« less

Reactions of nitroxide radicals in aqueous solutions exposed to non-thermal plasma: limitations of spin trapping of the plasma induced species

NASA Astrophysics Data System (ADS)

Gorbanev, Yury; Stehling, Nicola; O'Connell, Deborah; Chechik, Victor

2016-10-01

Low temperature (‘cold’) atmospheric pressure plasmas have gained much attention in recent years due to their biomedical effects achieved through the interactions of plasma-induced species with the biological substrate. Monitoring of the radical species in an aqueous biological milieu is usually performed via electron paramagnetic resonance (EPR) spectroscopy using various nitrone spin traps, which form persistent radical adducts with the short-lived radicals. However, the stability of these nitroxide radical adducts in the plasma-specific environment is not well known. In this work, chemical transformations of nitroxide radicals in aqueous solutions using a model nitroxide 4-oxo-TEMPO were studied using EPR and LC-MS. The kinetics of the nitroxide decay when the solution was exposed to plasma were assessed, and the reactive pathways proposed. The use of different scavengers enabled identification of the types of reactive species which cause the decay, indicating the predominant nitroxide group reduction in oxygen-free plasmas. The 2H adduct of the PBN spin trap (PBN-D) was shown to decay similarly to the model molecule 4-oxo-TEMPO. The decay of the spin adducts in plasma-treated solutions must be considered to avoid rendering the spin trapping results unreliable. In particular, the selectivity of the decay indicated the limitations of the PTIO/PTI nitroxide system in the detection of nitric oxide.

A simple laser locking system based on a field-programmable gate array.

PubMed

Jørgensen, N B; Birkmose, D; Trelborg, K; Wacker, L; Winter, N; Hilliard, A J; Bason, M G; Arlt, J J

2016-07-01

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.

A simple laser locking system based on a field-programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jørgensen, N. B.; Birkmose, D.; Trelborg, K.

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The lockingmore » system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.« less

Dynamics and stability of a 2D ideal vortex under external strain

NASA Astrophysics Data System (ADS)

Hurst, N. C.; Danielson, J. R.; Dubin, D. H. E.; Surko, C. M.

2017-11-01

The behavior of an initially axisymmetric 2D ideal vortex under an externally imposed strain flow is studied experimentally. The experiments are carried out using electron plasmas confined in a Penning-Malmberg trap; here, the dynamics of the plasma density transverse to the field are directly analogous to the dynamics of vorticity in a 2D ideal fluid. An external strain flow is applied using boundary conditions in a way that is consistent with 2D fluid dynamics. Data are compared to predictions from a theory assuming a piecewise constant elliptical vorticity distribution. Excellent agreement is found for quasi-flat profiles, whereas the dynamics of smooth profiles feature modified stability limits and inviscid damping of periodic elliptical distortions. This work supported by U.S. DOE Grants DE-SC0002451 and DE-SC0016532, and NSF Grant PHY-1414570.

Rapid feedback control and stabilization of an optical tweezers with a budget microcontroller

NASA Astrophysics Data System (ADS)

Nino, Daniel; Wang, Haowei; Milstein, Joshua N.

2014-09-01

Laboratories ranging the scientific disciplines employ feedback control to regulate variables within their experiments, from the flow of liquids within a microfluidic device to the temperature within a cell incubator. We have built an inexpensive, yet fast and rapidly deployed, feedback control system that is straightforward and flexible to implement from a commercially available Arduino Due microcontroller. This is in comparison with the complex, time-consuming and often expensive electronics that are commonly implemented. As an example of its utility, we apply our feedback controller to the task of stabilizing the main trapping laser of an optical tweezers. The feedback controller, which is inexpensive yet fast and rapidly deployed, was implemented from hacking an open source Arduino Due microcontroller. Our microcontroller based feedback system can stabilize the laser intensity to a few tenths of a per cent at 200 kHz, which is an order of magnitude better than the laser's base specifications, illustrating the utility of these devices.

A Monte Carlo model of hot electron trapping and detrapping in SiO2

NASA Astrophysics Data System (ADS)

Kamocsai, R. L.; Porod, W.

1991-02-01

High-field stressing and oxide degradation of SiO2 are studied using a microscopic model of electron heating and charge trapping and detrapping. Hot electrons lead to a charge buildup in the oxide according to the dynamic trapping-detrapping model by Nissan-Cohen and co-workers [Y. Nissan-Cohen, J. Shappir, D. Frohman-Bentchkowsky, J. Appl. Phys. 58, 2252 (1985)]. Detrapping events are modeled as trap-to-band impact ionization processes initiated by high energy conduction electrons. The detailed electronic distribution function obtained from Monte Carlo transport simulations is utilized for the determination of the detrapping rates. We apply our microscopic model to the calculation of the flat-band voltage shift in silicon dioxide as a function of the electric field, and we show that our model is able to reproduce the experimental results. We also compare these results to the predictions of the empirical trapping-detrapping model which assumes a heuristic detrapping cross section. Our microscopic theory accounts for the nonlocal nature of impact ionization which leads to a dark space close to the injecting cathode, which is unaccounted for in the empirical model.

Advantages of MgAlOx over gamma-Al2O3 as a support material for potassium-based high temperature lean NOx traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Jinyong; Gao, Feng; Karim, Ayman M.

MgAlOx mixed oxides were employed as supports for potassium-based lean NOx traps (LNTs) targeted for high temperature applications. Effects of support compositions, K/Pt loadings, thermal aging and catalyst regeneration on NOx storage capacity were systematically investigated. The catalysts were characterized by XRD, NOx-TPD, TEM, STEM-HAADF and in-situ XAFS. The results indicate that MgAlOx mixed oxides have significant advantages over conventional gamma-Al2O3-supports for LNT catalysts, in terms of high temperature NOx trapping capacity and thermal stability. First, as a basic support, MgAlOx stabilizes stored nitrates (in the form of KNO3) to much higher temperatures than mildly acidic gamma-Al2O3. Second, MgAlOx minimizesmore » Pt sintering during thermal aging, which is not possible for gamma-Al2O3 supports. Notably, combined XRD, in-situ XAFS and STEM-HAADF results indicate that Pt species in the thermally aged Pt/MgAlOx samples are finely dispersed in the oxide matrix as isolated atoms. This strong metal-support interaction stabilizes Pt and minimizes the extent of sintering. However, such strong interactions result in Pt oxidation via coordination with the support so that NO oxidation activity can be adversely affected after aging which, in turn, decreases NOx trapping ability for these catalysts. Interestingly, a high-temperature reduction treatment regenerates essentially full NOx trapping performance. In fact, regenerated Pt/K/MgAlOx catalyst exhibits much better NOx trapping performance than fresh Pt/K/Al2O3 LNTs over the entire temperature range investigated here. In addition to thermal aging, Pt/K loading effects were systemically studied over the fresh samples. The results indicate that NOx trapping is kinetically limited at low temperatures, while thermodynamically limited at high temperatures. A simple conceptual model was developed to explain the Pt and K loading effects on NOx storage. An optimized K loading, which allows balancing between the stability of nitrates and exposed Pt surface, gives the best NOx trapping capability.« less

Experimental and theoretical investigations on the validity of the geometrical optics model for calculating the stability of optical traps.

PubMed

Schut, T C; Hesselink, G; de Grooth, B G; Greve, J

1991-01-01

We have developed a computer program based on the geometrical optics approach proposed by Roosen to calculate the forces on dielectric spheres in focused laser beams. We have explicitly taken into account the polarization of the laser light and thd divergence of the laser beam. The model can be used to evaluate the stability of optical traps in a variety of different optical configurations. Our calculations explain the experimental observation by Ashkin that a stable single-beam optical trap, without the help of the gravitation force, can be obtained with a strongly divergent laser beam. Our calculations also predict a different trap stability in the directions orthogonal and parallel to the polarization direction of the incident light. Different experimental methods were used to test the predictions of the model for the gravity trap. A new method for measuring the radiation force along the beam axis in both the stable and instable regions is presented. Measurements of the radiation force on polystyrene spheres with diameters of 7.5 and 32 microns in a TEM00-mode laser beam showed a good qualitative correlation with the predictions and a slight quantitative difference. The validity of the geometrical approximations involved in the model will be discussed for spheres of different sizes and refractive indices.

Electron source for a mini ion trap mass spectrometer

DOEpatents

Dietrich, Daniel D.; Keville, Robert F.

1995-01-01

An ion trap which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10.sup.9 and commercial mass spectrometers requiring 10.sup.4 ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

PubMed Central

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-01-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

PubMed

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

On the surface trapping parameters of polytetrafluoroethylene block

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Yang, Kai; Zhao, Wen-Bin; Yan, Zhang

2006-12-01

Surface flashover phenomena under high electric field are closely related to the surface characteristics of a solid insulating material between energized electrodes. Based on measuring the surface potential decaying curve of polytetrafluoroethylene (PTFE) block charged by a needle-plane corona discharge, its surface trapping parameters are calculated with the isothermal current theory, and the correlative curve between the surface trap density and its energy level is obtained. The maximum density of electron traps and hole traps in the surface layer of PTFE presents a similar value of ∼2.7 × 1017 eV-1 m-3, and the energy level of its electron and hole traps is of about 0.85-1.0 eV and 0.80-0.90 eV, respectively. Via the X-ray photoelectron spectroscopy (XPS) technique, the F, C, K and O elements are detected on the surface of PTFE samples, and F shows a remarkable atom proportion of ∼73.3%, quite different from the intrinsic distribution corresponding to its chemical formula. The electron traps are attributed to quantities of F atoms existing on the surface of PTFE due to its molecular chain with C atoms surrounded by F atoms spirally. It is considered that the distortions of chemical and electronic structure on solid surface are responsible for the flashover phenomena occurring at a low applied voltage.

Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam: Application to single-crystals oxide trapping properties

NASA Astrophysics Data System (ADS)

Vallayer, B.; Blaise, G.; Treheux, D.

1999-07-01

When an insulating material is subjected to electron irradiation, it produces a secondary emission the yield of which varies from a few percent to very high values (up to 24 per incoming electron) depending on the material and the experimental conditions. If the secondary electron emission yield is less than one, a net negative charge remains trapped in the sample. In this case, the study of the electric charges trapping properties of the material becomes possible. This article describes how it is possible to use a secondary electron microscope (SEM) as a device to perform such a study. In Sec. II, the effect of a net negative trapped charge resulting (from the injection of typically 50 pC) on the imaging process of the SEM has been described. It has been shown that when the trapped charge is high enough, it acts as a mirror reflecting the incoming electron beam which is deflected somewhere in the vacuum chamber of the microscope. A global qualitative description of the image displayed on the screen is first presented. Then electron trajectories are quantitatively studied by using the Rutherford scattering cross section in the case of a point charge. When the charge is extended, a numeric simulation has been done in order to predict the validity range of the previous model. Once the trajectories have been calculated, the connection between the remarkable elements of the image and the quantity of trapped charges has been established. Moreover, this technique allows one to study the lateral dimension of the trapped charge zone and to measure the surface potential. In Sec. III, the discussion is first focused on some precautions to be taken concerning the sample preparation before the experiment is performed. It has been shown that surface defects due either to contamination layers or machining change the trapping properties of single-crystals ceramics such as MgO and Al2O3. A cleaning procedure is proposed that consists of annealing the sample at 1500 °C for 4 h in order to heal the crystalline defects and a heating at 400 °C in the vacuum chamber of the SEM to remove the contamination layers. Finally, the effect of the temperature on the trapping properties of pure and chromium doped sapphire has been studied in relation with the chromium concentration. It is shown that temperature behavior of trapping is in relation with the chromium concentration. In the pure sapphire trapping is activated below -16 °C, in 500 ppm rubis it is below -9.5 °C due to isolated chromium atoms, and in the 8000 ppm rubis the critical trapping temperature rises to 3.7 °C due to Cr3+ pairs. The interpretation of the role played by chromium on trapping is based on the experimental study of the fluorescence of chromium atoms and pairs as a function of concentration.

Nonlinear Upshift of Trapped Electron Mode Critical Density Gradient: Simulation and Experiment

NASA Astrophysics Data System (ADS)

Ernst, D. R.

2012-10-01

A new nonlinear critical density gradient for pure trapped electron mode (TEM) turbulence increases strongly with collisionality, saturating at several times the linear threshold. The nonlinear TEM threshold appears to limit the density gradient in new experiments subjecting Alcator C-Mod internal transport barriers to modulated radio-frequency heating. Gyrokinetic simulations show the nonlinear upshift of the TEM critical density gradient is associated with long-lived zonal flow dominated states [1]. This introduces a strong temperature dependence that allows external RF heating to control TEM turbulent transport. During pulsed on-axis heating of ITB discharges, core electron temperature modulations of 50% were produced. Bursts of line-integrated density fluctuations, observed on phase contrast imaging, closely follow modulations of core electron temperature inside the ITB foot. Multiple edge fluctuation measurements show the edge response to modulated heating is out of phase with the core response. A new limit cycle stability diagram shows the density gradient appears to be clamped during on-axis heating by the nonlinear TEM critical density gradient, rather than by the much lower linear threshold. Fluctuation wavelength spectra will be quantitatively compared with nonlinear TRINITY/GS2 gyrokinetic transport simulations, using an improved synthetic diagnostic. In related work, we are implementing the first gyrokinetic exact linearized Fokker Planck collision operator [2]. Initial results show short wavelength TEMs are fully stabilized by finite-gyroradius collisional effects for realistic collisionalities. The nonlinear TEM threshold and its collisionality dependence may impact predictions of density peaking based on quasilinear theory, which excludes zonal flows.[4pt] In collaboration with M. Churchill, A. Dominguez, C. L. Fiore, Y. Podpaly, M. L. Reinke, J. Rice, J. L. Terry, N. Tsujii, M. A. Barnes, I. Bespamyatnov, R. Granetz, M. Greenwald, A. Hubbard, J. W. Hughes, M. Landreman, B. Li, Y. Ma, P. Phillips, M. Porkolab, W. Rowan, S. Wolfe, and S. Wukitch.[4pt] [1] D. R. Ernst et al., Proc. 21st IAEA Fusion Energy Conference, Chengdu, China, paper IAEA-CN-149/TH/1-3 (2006). http://www-pub.iaea.org/MTCD/Meetings/FEC200/th1-3.pdf[0pt] [2] B. Li and D.R. Ernst, Phys. Rev. Lett. 106, 195002 (2011).

Intensity dependence of non-linear kinetic behaviour of stimulated Raman scattering in fusion relevant plasmas

NASA Astrophysics Data System (ADS)

Mašek, Martin; Rohlena, Karel

2015-05-01

Influence of kinetic effects on 3-wave interaction was examined within the frame of stimulated Raman backward scattering (SRBS) in a rarefied laser corona. The plasma is supposed to be weakly collisional with a negligible density gradient. The model is centred on the physical situation of shock ignition at a large scale direct drive compression experiments. The modelling uses a 1D geometry in a Maxwell-Vlasov model. The method used is a truncated Fourier-Hermite expansion numerically stabilized by a model collisional term with a realistic value of the collision frequency. In parallel, besides the linear theory of SRBS, a coupled mode 3-wave equation system (laser driving wave, Raman back-scattered wave and the daughter forward scattered plasma wave) is solved to demonstrate the correspondence between the full kinetic model and 3-wave interaction with no electron kinetics involved to identify the differences between both the solutions arising due to the electron kinetic effects. We concentrated mainly on the Raman reflectivity, which is one of the important parameters controlling the efficiency of the shock ignition scheme. It was found that the onset of the kinetic effects has a distinct intensity threshold, above which the Raman reflectivity may go down due to the electron kinetics. In addition, we were trying to identify the most important features of the electron phase space behaviour, such as particle trapping in potential minima of the generated plasma wave and its consequences for the 3-wave interaction. The role of the trapped electrons seems to be crucial for a deformation of the plasma wave dispersion curve, as indicated in some earlier work.

Injection and trapping of tunnel-ionized electrons into laser-produced wakes.

PubMed

Pak, A; Marsh, K A; Martins, S F; Lu, W; Mori, W B; Joshi, C

2010-01-15

A method, which utilizes the large difference in ionization potentials between successive ionization states of trace atoms, for injecting electrons into a laser-driven wakefield is presented. Here a mixture of helium and trace amounts of nitrogen gas was used. Electrons from the K shell of nitrogen were tunnel ionized near the peak of the laser pulse and were injected into and trapped by the wake created by electrons from majority helium atoms and the L shell of nitrogen. The spectrum of the accelerated electrons, the threshold intensity at which trapping occurs, the forward transmitted laser spectrum, and the beam divergence are all consistent with this injection process. The experimental measurements are supported by theory and 3D OSIRIS simulations.

Generation of forerunner electron beam during interaction of ion beam pulse with plasma

DOE PAGES

Hara, Kentaro; Kaganovich, Igor D.; Startsev, Edward A.

2018-01-01

The long-time evolution of the two-stream instability of a cold tenuous ion beam pulse propagating through the background plasma with density much higher than the ion beam density is investigated using a large-scale one-dimensional electrostatic kinetic simulation. The three stages of the instability are investigated in detail. After the initial linear growth and saturation by the electron trapping, a portion of the initially trapped electrons becomes detrapped and moves ahead of the ion beam pulse forming a forerunner electron beam, which causes a secondary two-stream instability that preheats the upstream plasma electrons. Consequently, the self-consistent nonlinear-driven turbulent state is setmore » up at the head of the ion beam pulse with the saturated plasma wave sustained by the influx of the cold electrons from upstream of the beam that lasts until the final stage when the beam ions become trapped by the plasma wave. Finally, the beam ion trapping leads to the nonlinear heating of the beam ions that eventually extinguishes the instability.« less

Generation of forerunner electron beam during interaction of ion beam pulse with plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hara, Kentaro; Kaganovich, Igor D.; Startsev, Edward A.

The long-time evolution of the two-stream instability of a cold tenuous ion beam pulse propagating through the background plasma with density much higher than the ion beam density is investigated using a large-scale one-dimensional electrostatic kinetic simulation. The three stages of the instability are investigated in detail. After the initial linear growth and saturation by the electron trapping, a portion of the initially trapped electrons becomes detrapped and moves ahead of the ion beam pulse forming a forerunner electron beam, which causes a secondary two-stream instability that preheats the upstream plasma electrons. Consequently, the self-consistent nonlinear-driven turbulent state is setmore » up at the head of the ion beam pulse with the saturated plasma wave sustained by the influx of the cold electrons from upstream of the beam that lasts until the final stage when the beam ions become trapped by the plasma wave. Finally, the beam ion trapping leads to the nonlinear heating of the beam ions that eventually extinguishes the instability.« less

Free-electron maser with high-selectivity Bragg resonator using coupled propagating and trapped modes

NASA Astrophysics Data System (ADS)

Ginzburg, N. S.; Golubev, I. I.; Golubykh, S. M.; Zaslavskii, V. Yu.; Zotova, I. V.; Kaminsky, A. K.; Kozlov, A. P.; Malkin, A. M.; Peskov, N. Yu.; Perel'Shteĭn, É. A.; Sedykh, S. N.; Sergeev, A. S.

2010-10-01

A free-electron maser (FEM) with a double-mirror resonator involving a new modification of Bragg structures operating on coupled propagating and quasi-cutoff (trapped) modes has been studied. The presence of trapped waves in the feedback chain improves the selectivity of Bragg resonators and ensures stable single-mode generation regime at a considerable superdimensionality of the interaction space. The possibility of using the new feedback mechanism has been confirmed by experiments with a 30-GHz FEM pumped by the electron beam of LIU-3000 (JINR) linear induction accelerator, in which narrow-band generation was obtained at a power of ˜10 MW and a frequency close to the cutoff frequency of the trapped mode excited in the input Bragg reflector.

Influence of the shear flow on electron cyclotron resonance plasma confinement in an axisymmetric magnetic mirror trap of the electron cyclotron resonance ion source.

PubMed

Izotov, I V; Razin, S V; Sidorov, A V; Skalyga, V A; Zorin, V G; Bagryansky, P A; Beklemishev, A D; Prikhodko, V V

2012-02-01

Influence of shear flows of the dense plasma created under conditions of the electron cyclotron resonance (ECR) gas breakdown on the plasma confinement in the axisymmetric mirror trap ("vortex" confinement) was studied experimentally and theoretically. A limiter with bias potential was set inside the mirror trap for plasma rotation. The limiter construction and the optimal value of the potential were chosen according to the results of the preliminary theoretical analysis. This method of "vortex" confinement realization in an axisymmetric mirror trap for non-equilibrium heavy-ion plasmas seems to be promising for creation of ECR multicharged ion sources with high magnetic fields, more than 1 T.

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yun-Hsiang; A*STAR Institute of Microelectronics, Singapore 117685; Liang, Yung C., E-mail: chii@nus.edu.sg

2016-06-06

In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (V{sub TH}) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (APT) prior to the fluorine plasma treatment (FPT) on Al{sub 2}O{sub 3} gate dielectrics. For the MIS-HEMT with FPT only, its V{sub TH} drops from 4.2 V at room temperature to 0.5 V at 200 °C. Alternatively, for the device with APT-then-FPT process, its V{sub TH} can retain at 2.5 V at 200 °C due to the increased amount of deep-level traps that do not emit electrons atmore » 200 °C. This thermally stable V{sub TH} makes this device suitable for high power applications. The depth profile of the F atoms in Al{sub 2}O{sub 3}, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al{sub 2}O{sub 3} surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrödinger equation of Al{sub 2}O{sub x}F{sub y} cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al{sub 2}O{sub 3} bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.« less

Controllable Spatial Configuration on Cathode Interface for Enhanced Photovoltaic Performance and Device Stability.

PubMed

Li, Jiangsheng; Duan, Chenghao; Wang, Ning; Zhao, Chengjie; Han, Wei; Jiang, Li; Wang, Jizheng; Zhao, Yingjie; Huang, Changshui; Jiu, Tonggang

2018-05-08

The molecular structure of cathode interface modification materials can affect the surface morphology of the active layer and key electron transfer processes occurring at the interface of polymer solar cells in inverted structures mostly due to the change of molecular configuration. To investigate the effects of spatial configuration of the cathode interfacial modification layer on polymer solar cells device performances, we introduced two novel organic ionic salts (linear NS2 and three-dimensional (3D) NS4) combined with the ZnO film to fabricate highly efficient inverted solar cells. Both organic ionic salts successfully decreased the surface traps of the ZnO film and made its work function more compatible. Especially NS4 in three-dimensional configuration increased the electron mobility and extraction efficiency of the interfacial film, leading to a significant improvement of device performance. Power conversion efficiency (PCE) of 10.09% based on NS4 was achieved. Moreover, 3D interfacial modification could retain about 92% of its initial PCE over 160 days. It is proposed that 3D interfacial modification retards the element penetration-induced degradation without impeding the electron transfer from the active layer to the ZnO film, which significantly improves device stability. This indicates that inserting three-dimensional organic ionic salt is an efficient strategy to enhance device performance.

On the correct implementation of Fermi-Dirac statistics and electron trapping in nonlinear electrostatic plane wave propagation in collisionless plasmas

NASA Astrophysics Data System (ADS)

Schamel, Hans; Eliasson, Bengt

2016-05-01

Quantum statistics and electron trapping have a decisive influence on the propagation characteristics of coherent stationary electrostatic waves. The description of these strictly nonlinear structures, which are of electron hole type and violate linear Vlasov theory due to the particle trapping at any excitation amplitude, is obtained by a correct reduction of the three-dimensional Fermi-Dirac distribution function to one dimension and by a proper incorporation of trapping. For small but finite amplitudes, the holes become of cnoidal wave type and the electron density is shown to be described by a ϕ ( x ) 1 / 2 rather than a ϕ ( x ) expansion, where ϕ ( x ) is the electrostatic potential. The general coefficients are presented for a degenerate plasma as well as the quantum statistical analogue to these steady state coherent structures, including the shape of ϕ ( x ) and the nonlinear dispersion relation, which describes their phase velocity.

Reduction of LDI threshold by electron trapping

NASA Astrophysics Data System (ADS)

Rose, Harvey A.; Russell, David

2000-10-01

The effect of trapped electrons on the Langmuir wave decay instability (LDI), considered as a secondary instability to SRS, is twofold. First, for a given level of SRS, the Langmuir wave (LW) response, LW_0, may increase compared to that predicted by the linearized Vlasov equation because of electrons trapped by LW_0, and second, given LW_0, the threshold for LDI is lowered^* by electrons trapped in the LDI daughter wave, LW_1. When kλ D for LW0 is large, say greater than 0.30, then its harmonics, and those of LW_1, are very weakly excited and a complete catalog of nonlinear periodic solutions arising from the LDI is possible. Dependence of the nonlinear LDI threshold on kλ D for a CH plasma will be presented. *This possibility has also been discussed by D. Mourenas, Phys. Plasmas 6, 1258 (1999).

Laser frequency stabilization using a commercial wavelength meter

NASA Astrophysics Data System (ADS)

Couturier, Luc; Nosske, Ingo; Hu, Fachao; Tan, Canzhu; Qiao, Chang; Jiang, Y. H.; Chen, Peng; Weidemüller, Matthias

2018-04-01

We present the characterization of a laser frequency stabilization scheme using a state-of-the-art wavelength meter based on solid Fizeau interferometers. For a frequency-doubled Ti-sapphire laser operated at 461 nm, an absolute Allan deviation below 10-9 with a standard deviation of 1 MHz over 10 h is achieved. Using this laser for cooling and trapping of strontium atoms, the wavemeter scheme provides excellent stability in single-channel operation. Multi-channel operation with a multimode fiber switch results in fluctuations of the atomic fluorescence correlated to residual frequency excursions of the laser. The wavemeter-based frequency stabilization scheme can be applied to a wide range of atoms and molecules for laser spectroscopy, cooling, and trapping.

Relativistic electron microbursts and variations in trapped MeV electron fluxes during the 8-9 October 2012 storm: SAMPEX and Van Allen Probes observations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurita, Satoshi; Miyoshi, Yoshizumi; Blake, J. Bernard

2016-03-06

It has been suggested that whistler mode chorus is responsible for both acceleration of MeV electrons and relativistic electron microbursts through resonant wave-particle interactions. Relativistic electron microbursts have been considered as an important loss mechanism of radiation belt electrons. Here in this paper we report on the observations of relativistic electron microbursts and flux variations of trapped MeV electrons during the 8–9 October 2012 storm, using the SAMPEX and Van Allen Probes satellites. Observations by the satellites show that relativistic electron microbursts correlate well with the rapid enhancement of trapped MeV electron fluxes by chorus wave-particle interactions, indicating that accelerationmore » by chorus is much more efficient than losses by microbursts during the storm. It is also revealed that the strong chorus wave activity without relativistic electron microbursts does not lead to significant flux variations of relativistic electrons. Thus, effective acceleration of relativistic electrons is caused by chorus that can cause relativistic electron microbursts.« less

A highly miniaturized vacuum package for a trapped ion atomic clock

DOE PAGES

Schwindt, Peter D. D.; Jau, Yuan-Yu; Partner, Heather; ...

2016-05-12

We report on the development of a highly miniaturized vacuum package for use in an atomic clock utilizing trapped ytterbium-171 ions. The vacuum package is approximately 1 cm 3 in size and contains a linear quadrupole RF Paul ion trap, miniature neutral Yb sources, and a non-evaporable getter pump. We describe the fabrication process for making the Yb sources and assembling the vacuum package. To prepare the vacuum package for ion trapping, it was evacuated, baked at a high temperature, and then back filled with a helium buffer gas. Once appropriate vacuum conditions were achieved in the package, the packagemore » was sealed with a copper pinch-off and was then pumped only by the non-evaporable getter. We demonstrated ion trapping in this vacuum package and the operation of an atomic clock, stabilizing a local oscillator to the 12.6 GHz hyperfine transition of 171Yb +. The fractional frequency stability of the clock was measured to be 2 × 10 -11 / τ 1/2.« less

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

NASA Astrophysics Data System (ADS)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Hu, J.; Stoffels, S.; Lenci, S.; Bakeroot, B.; Venegas, R.; Groeseneken, G.; Decoutere, S.

2015-02-01

This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕB increase) together with RON degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

NASA Astrophysics Data System (ADS)

Asano, Tetsuya

Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts. Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10 10 cmHz1/2/W at ˜ 77 K will enable RC-QDIP with detectivites > 1011 cmHz1/2/W that become competitive with other photodetector technologies in the mid IR (3 -- 5 mum) and long wavelength IR (8 -- 12 mum) ranges with the added advantage of materials stability and normal incidence sensitivity. Extended defect-free and size-uniform MQD structures of shallow InAs on GaAs (001) SAQDs capped with In0.15Ga0.85As strain relief layers and separated by GaAs spacer layer were grown up to 20 periods employing a judicious combination of MBE and migration enhanced epitaxy (MEE) techniques and examined by detailed transmission electron microscopy studies to reveal the absence of detectable extended defects (dislocation density < ˜ 107 /cm2). Photoluminescence studies revealed high optical quality. As our focus was on mid-infrared detectors, the MQD structures were grown in n (GaAs) -- i (MQD) -- n (GaAs) structures providing electron occupancy in at least the quantum confined ground energy states of the SAQDs and thus photodetection based upon transitions to electron excited states. Bias and temperature-dependent dark and photocurrent measurements were carried out for a variety of doping profiles and the electron density spatial distribution was determined from the resulting band bending profiles. It is revealed that almost no free electrons are present in the middle SAQD layers in the 10-period and 20-period n--i--n QDIP structures, indicating the existence of a high density (˜1015/cm3) of negative charges which can be attributed to electrons trapped in deep levels. To examine the nature of these deep traps, samples suitable for deep level transient spectroscopy measurement were synthesized and examined. These studies, carried out for the first time for SAQDs, revealed that the deep traps are dominantly present in the GaAs overgrowth layers grown at 500°C by MBE. For structures involving GaAs overgrowths using MEE at temperatures as low as 350°C, the deep trap density in the GaAs overgrowth layer was found to be significantly reduced by factor of ˜ 20. Thus, employing MEE growth for GaAs spacer layers in n--i(20-period MQD)-- n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density. Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 -- 5 mum infrared regime were realized utilizing [(AlAs)1(GaAs)4]4 short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ˜ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ˜ 1010 cmHz 1/2/W at ˜ 77 K competitive with other IR photodetector technologies.

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy.

PubMed

Bose, Riya; Bera, Ashok; Parida, Manas R; Adhikari, Aniruddha; Shaheen, Basamat S; Alarousu, Erkki; Sun, Jingya; Wu, Tom; Bakr, Osman M; Mohammed, Omar F

2016-07-13

Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and optoelectronics devices based on these NCs. In order to design efficient passivation techniques to minimize these trap states, a precise knowledge about the charge carrier dynamics on the NCs surface is essential. However, selective mapping of surface traps requires capabilities beyond the reach of conventional laser spectroscopy and static electron microscopy; it can only be accessed by using a one-of-a-kind, second-generation four-dimensional scanning ultrafast electron microscope (4D S-UEM) with subpicosecond temporal and nanometer spatial resolutions. Here, we precisely map the collective surface charge carrier dynamics of copper indium gallium selenide NCs as a function of the surface trap states before and after surface passivation in real space and time using S-UEM. The time-resolved snapshots clearly demonstrate that the density of the trap states is significantly reduced after zinc sulfide (ZnS) shelling. Furthermore, the removal of trap states and elongation of carrier lifetime are confirmed by the increased photocurrent of the self-biased photodetector fabricated using the shelled NCs.

Scattering of Magnetic Mirror-Trapped Fast Electrons by a Shear Alfvén Wave

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.

2011-12-01

Highly energetic electrons produced naturally or artificially can be trapped in the earth's radiation belts for months, posing a danger to satellites in space. An experimental investigation of the scattering of mirror trapped fast electrons by a shear Alfvén wave is performed at the Large Plasma Device (LaPD) at UCLA, and sheds light on a technique for artificially de-trapping the hazardous electrons in space. The experiment is performed in a quiescent afterglow plasma (ne ≈ 0.1 to 1×1012cm-3, Te ≈ 0.5 eV, B0 = 400 to 1200 G, L = 18 m, and diameter = 0.6 m). The magnetic field is programmed to include a mirror section approximately 3 m long, with 1.1 ≤Rmirror≤ 4. A trapped fast electron population is generated in the mirror section using second harmonic Electron Cyclotron Heating (ECH). The heating source comprises a 25 kW magnetron, operating at 2.45 GHz, with the microwave power injected for 10 - 50 ms. Longer injection periods (τ>30ms) result in a population of runaway electrons (energies up to 5MeV) as evidenced by X-ray production when the electron orbits hit a probe or the waveguide. The fastest electrons are generated in an annular region in front of the waveguide, with a radial extent of several cm and axial extent L ≈ 1 m. Shear Alfvén waves are launched with Bwave/B0 less than 0.5%, at frequencies ranging from 115 to 230 kHz (0.19 to 0.75 of fci in the straight field). Using the X-ray production, v⊥ probes and Langmuir probes as diagnostics, the Alfvén waves are observed to have a dramatic effect on the run-away electrons (E~105eV) as well as the less energetic electrons (E~102eV): the Alfvén wave can modify the trapped electron orbits to the extent that they are lost from the mirror trap. Possible mechanisms for scattering include the shear Alfvén wave breaking of one or more adiabatic invariants of an electron in a mirror field. This work is supported by The Office of Naval Research and performed at the Basic Plasma Science Facility under ONR MURI 00014-07-1-0789. The BaPSF is funded by the Department of Energy and the National Science Foundation.

Origin of Negative Capacitance in Bipolar Organic Diodes

NASA Astrophysics Data System (ADS)

Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

2018-03-01

Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

Designing of a Quadrupole Paul Ion Trap

NASA Astrophysics Data System (ADS)

Kiyani, Abouzar; Abdollahzadeh, M.; Sadat Kiai, S. M.; Zirak, A. R.

2011-08-01

The ion motion equation in a Paul ion trap known as Mathieu differential equation has been solved for the first time by using Runge-Kutta methods with 4th, 6th, and 8th orders. The first stability regions in az - qz plane and the corresponding qmax values were determined and compared. Also, the first stability regions of , , , ions in the Vdc - Vac plane were drown, and the threshold voltages for the ion separation was investigated.

Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr

In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristicmore » trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.« less

RF-Trapped Chip Scale Helium Ion Pump (RFT-CHIP)

DTIC Science & Technology

2016-04-06

14. ABSTRACT A miniaturized (~1 cc) magnet -less RF electron trap for a helium ion pump is studied, addressing challenges associated with active...pump, ion pump, electron trap, magnet -less, MEMS, radiofrequency 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT 18. NUMBER OF PAGES 19a...scale ion pumps. The Penning cell structure consists of three electrodes (an anode and two cathodes) and a magnet . Planar titanium cathodes are

Analytic model of electron self-injection in a plasma wakefield accelerator in the strongly nonlinear bubble regime

NASA Astrophysics Data System (ADS)

Yi, Sunghwan; Khudik, Vladimir; Shvets, Gennady

2012-10-01

We study self-injection into a plasma wakefield accelerator in the blowout (or bubble) regime, where the bubble evolves due to background density inhomogeneities. To explore trapping, we generalize an analytic model for the wakefields inside the bubble [1] to derive expressions for the fields outside. With this extended model, we show that a return current in the bubble sheath layer plays an important role in determining the trapped electron trajectories. We explore an injection mechanism where bubble growth due to a background density downramp causes reduction of the electron Hamiltonian in the co-moving frame, trapping the particle in the dynamically deepening potential well [2]. Model calculations agree quantitatively with PIC simulations on the bubble expansion rate required for trapping, as well as the range of impact parameters for which electrons are trapped. This is an improvement over our previous work [3] using a simplified spherical bubble model, which ignored the fields outside of the bubble and hence overestimated the expansion rate required for trapping. [4pt] [1] W. Lu et al., Phys. Plasmas 13, 056709 (2006).[0pt] [2] S. Kalmykov et al., Phys. Rev. Lett 103, 135004 (2009).[0pt] [3] S.A. Yi et al., Plasma Phys. Contr. Fus. 53, 014012 (2011).

The new ClusterTrap setup

NASA Astrophysics Data System (ADS)

Martinez, F.; Marx, G.; Schweikhard, L.; Vass, A.; Ziegler, F.

2011-07-01

ClusterTrap has been designed to investigate properties of atomic clusters in the gas phase with particular emphasis on the dependence on the cluster size and charge state. The combination of cluster source, Penning trap and time-of-flight mass spectrometry allows a variety of experimental schemes including collision-induced dissociation, photo-dissociation, further ionization by electron impact, and electron attachment. Due to the storage capability of the trap extended-delay reaction experiments can be performed. Several recent modifications have resulted in an improved setup. In particular, an electrostatic quadrupole deflector allows the coupling of several sources or detectors to the Penning trap. Furthermore, a linear radio-frequency quadrupole trap has been added for accumulation and ion bunching and by switching the potential of a drift tube the kinetic energy of the cluster ions can be adjusted on their way towards or from the Penning trap. Recently, experiments on multiply negatively charged clusters have been resumed.

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

2008-11-01

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

Electron trapping and transport by supersonic solitons in one-dimensional systems

NASA Technical Reports Server (NTRS)

Zmuidzinas, J. S.

1978-01-01

A one-dimensional chain of ions or molecules and electrons described by a Froehlich-type Hamiltonian with quartic phonon anharmonicities is investigated. It is shown that the anharmonic lattice supports supersonic solitons which under favorable circumstances may trap electrons and transport them along the lattice. For a lattice constant/soliton spatial extent quotient of the order of 0.1, rough estimates give electron trapping energies in the meV range. They imply a useful temperature range, up to tens of degrees K, for observing the new effect. The activation energy of a lattice soliton is proportional to the molecular mass and is therefore quite high (about 1 eV) for typical quasi-one-dimensional organic systems.

Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

DTIC Science & Technology

1985-04-01

activation energies than previously possible. Electron traps and hole traps with energies less than 50 meV were observed for the first time in GaAs...developed in our laboratory to photoexcite electrons in a given energy range in the conduction band and then measure the relaxation of these carriers...limitations on the electron energy may be required. CURRENT AND FUTURE EFFORTS The possibility of ballistic electron transport in gallium arsenide has been

Single particle and collective behavior of electrons in a diamagnetic Kepler trap

NASA Astrophysics Data System (ADS)

Godino, Joseph L.

2001-10-01

The Diamagnetic Kepler Trap (DKT) is a potential energy well that arises from a static Coulomb potential in a superimposed uniform magnetic field. Our goal is to study the single particle and collective behavior of electrons in a DKT. We have three principal reasons for doing so. First, trajectories of a single electron in a DKT can exhibit chaotic motion. The transition from regular to chaotic motion is theoretically interesting and we want to understand how this occurs. Second, we want to understand the behavior of a system of electrons in a laboratory realization of a DKT. In this situation, we have a many particle system of electrons and ions that move under the influence of external potentials in a neutral background gas. Under these conditions, trapped electrons exhibit collective modes of oscillation. Finally, by understanding the behavior of the trapped electrons we believe that we may be able to develop the DKT into an ion beam source. Due to the complexity of the DKT, we break our investigation into three parts. First, we conduct a theoretical and computational study of the motion of a single electron in a DKT. To enhance our understanding, we develop a simple model of the DKT that retains the significant properties of the exact system while permitting us to go further with our theoretical analysis. We develop a solution to the model equations of motion, which provide us with additional insight into the behavior of trajectories near the chaotic transition. Second, we characterize the behavior of trapped electrons in our experimental DKT. We present a set of measurements showing the collective oscillations. In addition, when we operate the DKT at magnetic fields greater than 100 gauss, we observe a columnar plasma beam emerging from the trap that we also characterize. Finally, we simulate the dynamics of the electrons and ions in a DKT. Here we include their interactions with the neutral background gas, boundary effects and space charge. We use the information obtained from our simulations to enhance our knowledge of the electrons in the experimental system.

A Non-Neutral Plasma Device: Electron Beam Penning Trap

NASA Astrophysics Data System (ADS)

Zhuang, Ge; Liu, Wan-dong; Zheng, Jian; Fu, Cheng-jiang; Bai, Bo; Chi, Ji; Zhao, Kai; Xie, Jin-lin; Liang, Xiao-ping; Yu, Chang-xuan

1999-12-01

An electron beam Penning trap (EBPT) non- neutral plasma system, built to investigate the formation of a dense electron core with the density beyond Brillouin limit and possible application to fusion research, has been described. The density in the center of the EBPT has been verified to be up to 10 times of Brillouin density limit.

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) wemore » show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.« less

Thermoluminescence glow curve deconvolution and trapping parameters determination of dysprosium doped magnesium borate glass

NASA Astrophysics Data System (ADS)

Salama, E.; Soliman, H. A.

2018-07-01

In this paper, thermoluminescence glow curves of gamma irradiated magnesium borate glass doped with dysprosium were studied. The number of interfering peaks and in turn the number of electron trap levels are determined using the Repeated Initial Rise (RIR) method. At different heating rates (β), the glow curves were deconvoluted into two interfering peaks based on the results of RIR method. Kinetic parameters such as trap depth, kinetic order (b) and frequency factor (s) for each electron trap level is determined using the Peak Shape (PS) method. The obtained results indicated that, the magnesium borate glass doped with dysprosium has two electron trap levels with the average depth energies of 0.63 and 0.79 eV respectively. These two traps have second order kinetic and are formed at low temperature region. The obtained results due to the glow curve analysis could be used to explain some observed properties such as, high thermal fading and light sensitivity for such thermoluminescence material. In this work, systematic procedures to determine the kinetic parameters of any thermoluminescence material are successfully introduced.

Imaging free radicals in organelles, cells, tissue, and in vivo with immuno-spin trapping.

PubMed

Mason, Ronald Paul

2016-08-01

The accurate and sensitive detection of biological free radicals in a reliable manner is required to define the mechanistic roles of such species in biochemistry, medicine and toxicology. Most of the techniques currently available are either not appropriate to detect free radicals in cells and tissues due to sensitivity limitations (electron spin resonance, ESR) or subject to artifacts that make the validity of the results questionable (fluorescent probe-based analysis). The development of the immuno-spin trapping technique overcomes all these difficulties. This technique is based on the reaction of amino acid- and DNA base-derived radicals with the spin trap 5, 5-dimethyl-1-pyrroline N-oxide (DMPO) to form protein- and DNA-DMPO nitroxide radical adducts, respectively. These adducts have limited stability and decay to produce the very stable macromolecule-DMPO-nitrone product. This stable product can be detected by mass spectrometry, NMR or immunochemistry by the use of anti-DMPO nitrone antibodies. The formation of macromolecule-DMPO-nitrone adducts is based on the selective reaction of free radical addition to the spin trap and is thus not subject to artifacts frequently encountered with other methods for free radical detection. The selectivity of spin trapping for free radicals in biological systems has been proven by ESR. Immuno-spin trapping is proving to be a potent, sensitive (a million times higher sensitivity than ESR), and easy (not quantum mechanical) method to detect low levels of macromolecule-derived radicals produced in vitro and in vivo. Anti-DMPO antibodies have been used to determine the distribution of free radicals in cells and tissues and even in living animals. In summary, the invention of the immuno-spin trapping technique has had a major impact on the ability to accurately and sensitively detect biological free radicals and, subsequently, on our understanding of the role of free radicals in biochemistry, medicine and toxicology. Published by Elsevier B.V.

Electron Spin Resonance (ESR) studies of returned comet nucleus samples

NASA Technical Reports Server (NTRS)

Tsay, Fun-Dow; Kim, Soon Sam; Liang, Ranty H.

1989-01-01

The most important objective of the Comet Nucleus Sample Returm Mission is to return samples which could reflect formation conditions and evolutionary processes in the early solar nebula. It is expected that the returned samples will consist of fine-grained silicate materials mixed with ices composed of simple molecules such as H2O, NH3, CH4 as well as organics and/or more complex compounds. Because of the exposure to ionizing radiation from cosmic-ray, gamma-ray, and solar wind protons at low temperature, free radicals are expected to be formed and trapped in the solid ice matrices. The kind of trapped radical species together with their concentration and thermal stability can be used as a dosimeter as well as a geothermometer to determine thermal and radiation histories as well as outgassing and other possible alternation effects since the nucleus material was formed. Since free radicals that are known to contain unpaired electrons are all paramagnetic in nature, they can be readily detected and characterized in their native form by the Electron Spin Resonance (ESR) method. In fact, ESR has been shown to be a non-destructive, highly sensitive tool for the detection and characterization of paramagnetic, ferromagnetic, and radiation damage centers in terrestrial and extraterrestrial geological samples. The potential use of ESR as an effective method in the study of returned comet nucleus samples, in particular, in the analysis of fine-grained solid state icy samples is discussed.

Digitally synthesized high purity, high-voltage radio frequency drive electronics for mass spectrometry.

PubMed

Schaefer, R T; MacAskill, J A; Mojarradi, M; Chutjian, A; Darrach, M R; Madzunkov, S M; Shortt, B J

2008-09-01

Reported herein is development of a quadrupole mass spectrometer controller (MSC) with integrated radio frequency (rf) power supply and mass spectrometer drive electronics. Advances have been made in terms of the physical size and power consumption of the MSC, while simultaneously making improvements in frequency stability, total harmonic distortion, and spectral purity. The rf power supply portion of the MSC is based on a series-resonant LC tank, where the capacitive load is the mass spectrometer itself, and the inductor is a solenoid or toroid, with various core materials. The MSC drive electronics is based on a field programmable gate array (FPGA), with serial peripheral interface for analog-to-digital and digital-to-analog converter support, and RS232/RS422 communications interfaces. The MSC offers spectral quality comparable to, or exceeding, that of conventional rf power supplies used in commercially available mass spectrometers; and as well an inherent flexibility, via the FPGA implementation, for a variety of tasks that includes proportional-integral derivative closed-loop feedback and control of rf, rf amplitude, and mass spectrometer sensitivity. Also provided are dc offsets and resonant dipole excitation for mass selective accumulation in applications involving quadrupole ion traps; rf phase locking and phase shifting for external loading of a quadrupole ion trap; and multichannel scaling of acquired mass spectra. The functionality of the MSC is task specific, and is easily modified by simply loading FPGA registers or reprogramming FPGA firmware.

Electron Spin Resonance (ESR) Studies of Returned Comet Nucleus Samples

NASA Technical Reports Server (NTRS)

Tsay, Fun-Dow; Kim, Soon Sam; Liang, Ranty H.

1997-01-01

Electron Spin Resonance (ESR) studies have been carried out on organic and inorganic free radicals generated by gamma-ray and/or UV-irradiation and trapped in ice matrices. It is suggested that the concentration of these free radicals together with their thermal stability can be used as an accurate built-in geothermometer and radiation probe for returned comet nucleus sample studies. ESR studies have also been carried out on paramagnetic (Mn(2+), Ti(3+), and Fe(3+)) and ferromagnetic (ferric oxide and metallic iron) centers known to be present in terrestrial and extraterrestrial samples. The presence or absence of these magnetic centers coupled with their characteristic ESR lineshape can be used to investigate the shock effects, quenching/cooling rate and oxidation-reduction conditions in the formation and subsequent evolution of returned comet nucleus samples.

Interaction of an ion bunch with a plasma slab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krasovitskiy, V. B., E-mail: krasovit@mail.ru; Turikov, V. A.

2016-11-15

Charge neutralization of a short ion bunch passing through a plasma slab is studied by means of numerical simulation. It is shown that a fraction of plasma electrons are trapped by the bunch under the action of the collective charge separation field. The accelerated electrons generated in this process excite beam−plasma instability, thereby violating the trapping conditions. The process of electron trapping is also strongly affected by the high-frequency electric field caused by plasma oscillations at the slab boundaries. It is examined how the degree of charge neutralization depends on the parameters of the bunch and plasma slab.

Location Of Hole And Electron Traps On Nanocrystalline Anatase TiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mercado, Candy C.; Knorr, Fritz J.; McHale, Jeanne L.

2012-05-17

The defect photoluminescence from TiO2 nanoparticles in the anatase phase is reported for nanosheets which expose predominantly (001) surfaces, and compared to that from conventional anatase nanoparticles which expose mostly (101) surfaces. Also reported is the weak defect photoluminescence of TiO2 nanotubes, which we find using electron back-scattered diffraction to consist of walls which expose (110) and (100) facets. The nanotubes exhibit photoluminescence that is blue-shifted and much weaker than that from conventional TiO2 nanoparticles. Despite the preponderance of (001) surfaces in the nanosheet samples, they exhibit photoluminescence similar to that of conventional nanoparticles. We assign the broad visible photoluminescencemore » of anatase nanoparticles to two overlapping distributions: hole trap emission associated with oxygen vacancies on (101) exposed surfaces, which peaks in the green, and a broader emission extending into the red which results from electron traps on under-coordinated titanium atoms, which are prevalent on (001) facets. The results of this study suggest how morphology of TiO2 nanoparticles could be optimized to control the distribution and activity of surface traps. Our results also shed light on the mechanism by which the TiCl4 surface treatment heals traps on anatase and mixed-phase TiO2 films, and reveals distinct differences in the trap-state distributions of TiO2 nanoparticles and nanotubes. The molecular basis for electron and hole traps and their spatial separation on different facets is discussed.« less

An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

DOE PAGES

Gul, R.; Roy, U. N.; James, R. B.

2017-03-15

In this paper, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτ e) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trappingmore » and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (V Cd -) were identified as a dominant trap. The V Cd - were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at E v + 0.36 eV and E v + 1.1 eV, E c + 76 meV and E v + 0.61 eV, E v + 36 meV and E v + 0.86 eV, E v + 0.52 eV and E c + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (N t), and capture cross-section (σ) and hence trapping (t t) and de-trapping (t dt) times. Finally, the dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.« less

An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; James, R. B.

In this paper, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτ e) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trappingmore » and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (V Cd -) were identified as a dominant trap. The V Cd - were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at E v + 0.36 eV and E v + 1.1 eV, E c + 76 meV and E v + 0.61 eV, E v + 36 meV and E v + 0.86 eV, E v + 0.52 eV and E c + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (N t), and capture cross-section (σ) and hence trapping (t t) and de-trapping (t dt) times. Finally, the dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.« less

Scattering of magnetic mirror trapped electrons by an Alfven wave

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.; Karavaev, A. V.; Shao, X.; Sharma, A. S.

2010-12-01

Highly energetic particles from large solar flares or other events can be trapped in the Earth’s magnetic mirror field and pose a danger to intricate space satellites. Aiming for artificially de-trapping these particles, an experimental and theoretical study of the interactions of a shear Alfven wave with electrons trapped in a magnetic mirror was performed on the Large Plasma Device (LaPD) at UCLA, with critical parameter ratios matched in the lab plasma to those in space. The experiment was done in a quiescent afterglow plasma with ne≈5×1011cm-3, Te≈0.5eV, B0≈1000G, L=18m, and diameter=60cm. A magnetic mirror was established in LaPD (mirror ratio≈1.5, Lmirror≈3m). An electron population with large v⊥ (E⊥≈1keV) was introduced by microwave heating at upper-hybrid frequency with a 2.45GHz pulsed microwave source at up to 5kW. A shear Alfven wave with arbitrary polarization (fwave≈0.5fci , Bwave/B0≈0.5%) was launched by a Rotating Magnetic Field (RMF) antenna axially 2m away from the center of the mirror. It was observed that the Alfven wave effectively eliminated the trapped electrons. A diagnostic probe was developed for this experiment to measure electrons with large v⊥ in the background plasma. Plasma density and temperature perturbations from the Alfven wave were observed along with electron scattering. Computer simulations tracking single particle motion with wave field are ongoing. In these the Alfven wave’s effect on the electrons pitch angle distribution by a Monte-Carlo method is studied. Planned experiments include upgrading the microwave source for up to 100kW pulses to make electrons with higher transverse energy and longer mirror trapping time. This work is supported by The Office of Naval Research under a MURI award. Work was done at the Basic Plasma Science Facility which is supported by DOE and NSF.

Superthermal Electron Magnetosphere-Ionosphere Coupling in the Diffuse Aurora in the Presence of ECH Waves

NASA Technical Reports Server (NTRS)

Khazanov, G. V.; Tripathi, A. K.; Singhal, R. P.; Himwich, Elizabeth; Glocer, A.; Sibeck, D. G.

2015-01-01

There are two main theories for the origin of the diffuse auroral electron precipitation: first, pitch angle scattering by electrostatic electron cyclotron harmonic (ECH) waves, and second, by whistler mode waves. Precipitating electrons initially injected from the plasma sheet to the loss cone via wave-particle interaction processes degrade in the atmosphere toward lower energies and produce secondary electrons via impact ionization of the neutral atmosphere. These secondary electrons can escape back to the magnetosphere, become trapped on closed magnetic field lines, and deposit their energy back to the inner magnetosphere. ECH and whistler mode waves can also move electrons in the opposite direction, from the loss cone into the trap zone, if the source of such electrons exists in conjugate ionospheres located at the same field lines as the trapped magnetospheric electron population. Such a situation exists in the simulation scenario of superthermal electron energy interplay in the region of diffuse aurora presented and discussed by Khazanov et al. (2014) and will be quantified in this paper by taking into account the interaction of secondary electrons with ECH waves.

Optical properties of voltage sensitive hemicyanine dyes of variable hydrophobicity confined within surfactant micelles

NASA Astrophysics Data System (ADS)

Naeem, Kashif; Naseem, Bushra; Shah, S. S.; Shah, Syed W. H.

2017-11-01

The optical properties of amphiphilic hemicyanine dyes with variable hydrophobicity, confined within anionic micelles of sodium dodecylbenzenesulfonate (NaDDBS) have been studied by UV-visible absorption spectroscopy. The confinement constant, K conf has been determined for each entrapped dye. The ion-pair formation between dye and surfactant causes a decline in electronic transition energy (ΔE T) when dye alkyl chains are smaller due to stabilization of both the ground and excited state. ΔE T values gradually increase with increase in dye hydrophobicity that hampers the electrostatic interaction with dialkylammonium moiety and consequently excited state stabilization is compromised. The average number of dye molecules trapped in a single micelle was also determined. The negative values of Gibbs free energy indicate that the dye entrapment within micelles is energetically favored. These findings have significance for developing functional materials with peculiar luminescent properties, especially for more effective probing of complex biological systems.

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Control system high-precision laser to obtain the ensemble of ultracold ions Th3+

NASA Astrophysics Data System (ADS)

Florentsev, V. V.; Zhdamirov, V. Yu; Rodko, I. I.; Borodulya, N. A.; Biryukov, A. P.

2018-01-01

One of key problems of nuclear standard frequency development is preparation assembly of ultracold thorium ions in Pauli trap. In this case semiconductive frequency-stabilized lasers with external resonator on frequencies 690 nm, 984 nm, and 1088 nm are used for excitation of corresponding electronic dipole and quadrupole cooling transitions for Th3+ ions. In the paper the results of development and creation of unified laser module, which is able to be used as base for full-featured system designed for laser cooling of Th3+ ions, are presented. The module is able to fine-tune necessary wavelength with accuracy ±5 nm.

Particle trapping: A key requisite of structure formation and stability of Vlasov–Poisson plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schamel, Hans, E-mail: hans.schamel@uni-bayreuth.de

2015-04-15

Particle trapping is shown to control the existence of undamped coherent structures in Vlasov–Poisson plasmas and thereby affects the onset of plasma instability beyond the realm of linear Landau theory.

ITG-TEM turbulence simulation with bounce-averaged kinetic electrons in tokamak geometry

NASA Astrophysics Data System (ADS)

Kwon, Jae-Min; Qi, Lei; Yi, S.; Hahm, T. S.

2017-06-01

We develop a novel numerical scheme to simulate electrostatic turbulence with kinetic electron responses in magnetically confined toroidal plasmas. Focusing on ion gyro-radius scale turbulences with slower frequencies than the time scales for electron parallel motions, we employ and adapt the bounce-averaged kinetic equation to model trapped electrons for nonlinear turbulence simulation with Coulomb collisions. Ions are modeled by employing the gyrokinetic equation. The newly developed scheme is implemented on a global δf particle in cell code gKPSP. By performing linear and nonlinear simulations, it is demonstrated that the new scheme can reproduce key physical properties of Ion Temperature Gradient (ITG) and Trapped Electron Mode (TEM) instabilities, and resulting turbulent transport. The overall computational cost of kinetic electrons using this novel scheme is limited to 200%-300% of the cost for simulations with adiabatic electrons. Therefore the new scheme allows us to perform kinetic simulations with trapped electrons very efficiently in magnetized plasmas.

TiO2 nanoparticle induced space charge decay in thermal aged transformer oil

NASA Astrophysics Data System (ADS)

Lv, Yuzhen; Du, Yuefan; Li, Chengrong; Qi, Bo; Zhong, Yuxiang; Chen, Mutian

2013-04-01

TiO2 nanoparticle with good dispersibility and stability in transformer oil was prepared and used to modify insulating property of aged oil. It was found that space charge decay rate in the modified aged oil can be significantly enhanced to 1.57 times of that in the aged oil at first 8 s after polarization voltage was removed. The results of trap characteristics reveal that the modification of nanoparticle can not only greatly lower the shallow trap energy level in the aged oil but also increase the trap density, resulting in improved charge transportation via trapping and de-trapping process in shallower traps.

Prediction of LDEF ionizing radiation environment

NASA Astrophysics Data System (ADS)

Watts, John W.; Parnell, T. A.; Derrickson, James H.; Armstrong, T. W.; Benton, E. V.

1992-01-01

The Long Duration Exposure Facility (LDEF) spacecraft flew in a 28.5 deg inclination circular orbit with an altitude in the range from 172 to 258.5 nautical miles. For this orbital altitude and inclination two components contribute most of the penetrating charge particle radiation encountered - the galactic cosmic rays and the geomagnetically trapped Van Allen protons. Where shielding is less than 1.0 g/sq cm geomagnetically trapped electrons make a significant contribution. The 'Vette' models together with the associated magnetic filed models were used to obtain the trapped electron and proton fluences. The mission proton doses were obtained from the fluence using the Burrell proton dose program. For the electron and bremsstrahlung dose we used the Marshall Space Flight Center (MSFC) electron dose program. The predicted doses were in general agreement with those measured with on-board thermoluminescent detector (TLD) dosimeters. The NRL package of programs, Cosmic Ray Effects on MicroElectronics (CREME), was used to calculate the linear energy transfer (LET) spectrum due to galactic cosmic rays (GCR) and trapped protons for comparison with LDEF measurements.

An Optical Trap for Relativistic Plasma

NASA Astrophysics Data System (ADS)

Zhang, Ping

2002-11-01

Optical traps have achieved remarkable success recently in confining ultra-cold matter.Traps capable of confining ultra-hot matter, or plasma, have also been built for applications such as basic plasma research and thermonuclear fusion. For instance, low-density plasmas with temperature less than 1 keV have been confined with static magnetic fields in Malmberg-Penning traps. Low-density 10-50 keV plasmas are confined in magnetic mirrors and tokamaks. High density plasmas have been trapped in optical traps with kinetic energies up to 10 keV [J. L. Chaloupka and D. D. Meyerhofer, Phys. Rev. Lett. 83, 4538 (1999)]. We present the results of experiment, theory and numerical simulation on an optical trap capable of confining relativistic plasma. A stationary interference grating with submicron spacing is created when two high-power (terawatt) laser pulses of equal wavelength (1-micron) are focused from orthogonal directions to the same point in space and time in high density underdense plasma. Light pressure gradients bunch electrons into sheets located at the minima of the interference pattern. The density of the bunched electrons is found to be up to ten times the background density, which is orders-of-magnitude above that previously reported for other optical traps or plasma waves. The amplitudes and frequencies of multiple satellites in the scattered spectrum also indicate the presence of a highly nonlinear ion wave and an electron temperature about 100 keV. Energy transfer from the stronger beam to the weaker beam is also observed. Potential applications include a test-bed for detailed studies of relativistic nonlinear scattering, a positron source and an electrostatic wiggler. This research is also relevant to fast igniter fusion or ion acceleration experiments, in which laser pulses with intensities comparable to those used in the experiment may also potentially beat [Y. Sentoku, et al., Appl. Phys. B 74, 207215 (2002)]. The details of a specific application, the injection of electrons into laser-driven plasma waves, will also be presented. With crossed beams, the energy of a laser-accelerated electron beam is increased and its emittance is decreased compared with a single beam, potentially paving the way towards an all-optical monoenergetic electron injector.

On Magnetic Flux Trapping by Surface Superconductivity

NASA Astrophysics Data System (ADS)

Podolyak, E. R.

2018-03-01

The magnetic flux trapping by surface superconductivity is considered. The stability of the state localized at the cylindrical sample surface upon a change in the external magnetic field is tested. It is shown that as the magnetic field decreases, the sample acquires a positive magnetic moment due to magnetic flux trapping; i.e., the magnetization curve of surface superconductivity is "paramagnetic" by nature.

Regulation of electron temperature gradient turbulence by zonal flows driven by trapped electron modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asahi, Y., E-mail: y.asahi@nr.titech.ac.jp; Tsutsui, H.; Tsuji-Iio, S.

2014-05-15

Turbulent transport caused by electron temperature gradient (ETG) modes was investigated by means of gyrokinetic simulations. It was found that the ETG turbulence can be regulated by meso-scale zonal flows driven by trapped electron modes (TEMs), which are excited with much smaller growth rates than those of ETG modes. The zonal flows of which radial wavelengths are in between the ion and the electron banana widths are not shielded by trapped ions nor electrons, and hence they are effectively driven by the TEMs. It was also shown that an E × B shearing rate of the TEM-driven zonal flows is larger thanmore » or comparable to the growth rates of long-wavelength ETG modes and TEMs, which make a main contribution to the turbulent transport before excitation of the zonal flows.« less

MAVEN Observations of Energy-Time Dispersed Electron Signatures in Martian Crustal Magnetic Fields

NASA Technical Reports Server (NTRS)

Harada, Y.; Mitchell, D. L.; Halekas, J. S.; McFadden, J. P.; Mazelle, C.; Connerney, J. E. P.; Espley, J.; Brain, D. A.; Larson, D. E.; Lillis, R. J.;

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

NASA Technical Reports Server (NTRS)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Energetic electron propagation in the decay phase of non-thermal flare emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jing; Yan, Yihua; Tsap, Yuri T., E-mail: huangj@nao.cas.cn

On the basis of the trap-plus-precipitation model, the peculiarities of non-thermal emission in the decay phase of solar flares have been considered. The calculation formulas for the escape rate of trapped electrons into the loss cone in terms of time profiles of hard X-ray (HXR) and microwave (MW) emission have been obtained. It has been found that the evolution of the spectral indices of non-thermal emission depend on the regimes of the pitch angle diffusion of trapped particles into the loss cone. The properties of non-thermal electrons related to the HXR and MW emission of the solar flare on 2004more » November 3 are studied with Nobeyama Radioheliograph, Nobeyama Radio Polarimeters, RHESSI, and Geostationary Operational Environmental Satellite observations. The spectral indices of non-thermal electrons related to MW and HXR emission remained constant or decreased, while the MW escape rate as distinguished from that of the HXRs increased. This may be associated with different diffusion regimes of trapped electrons into the loss cone. New arguments in favor of an important role of the superstrong diffusion for high-energy electrons in flare coronal loops have been obtained.« less

Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n{sup +}-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inokuchi, Tomoaki, E-mail: tomoaki.inokuchi@toshiba.co.jp; Ishikawa, Mizue; Sugiyama, Hideyuki

2014-12-08

Spin-dependent transport properties in CoFe/MgO/n{sup +}-Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n{sup +}-Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d{sup 2}I/dV{sup 2}-V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δd{sup 2}I/dV{sup 2} depends on the magnetic field and the fullmore » width at half-maximum of the Δd{sup 2}I/dV{sup 2}–H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.« less

High-k shallow traps observed by charge pumping with varying discharging times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are inmore » fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.« less

Electron source for a mini ion trap mass spectrometer

DOEpatents

Dietrich, D.D.; Keville, R.F.

1995-12-19

An ion trap is described which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10{sup 9} and commercial mass spectrometers requiring 10{sup 4} ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products. 10 figs.

HITRAP: A Facility for Experiments with Trapped Highly Charged Ions

NASA Astrophysics Data System (ADS)

Quint, W.; Dilling, J.; Djekic, S.; Häffner, H.; Hermanspahn, N.; Kluge, H.-J.; Marx, G.; Moore, R.; Rodriguez, D.; Schönfelder, J.; Sikler, G.; Valenzuela, T.; Verdú, J.; Weber, C.; Werth, G.

2001-01-01

HITRAP is a planned ion trap facility for capturing and cooling of highly charged ions produced at GSI in the heavy-ion complex of the UNILAC-SIS accelerators and the ESR storage ring. In this facility heavy highly charged ions up to uranium will be available as bare nuclei, hydrogen-like ions or few-electron systems at low temperatures. The trap for receiving and studying these ions is designed for operation at extremely high vacuum by cooling to cryogenic temperatures. The stored highly charged ions can be investigated in the trap itself or can be extracted from the trap at energies up to about 10 keV/q. The proposed physics experiments are collision studies with highly charged ions at well-defined low energies (eV/u), high-accuracy measurements to determine the g-factor of the electron bound in a hydrogen-like heavy ion and the atomic binding energies of few-electron systems, laser spectroscopy of HFS transitions and X-ray spectroscopy.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Ion Storage with the High Performance Antiproton Trap (HiPAT)

NASA Technical Reports Server (NTRS)

Martin, James; Lewis, Raymond; Chakrabarti, Suman; Pearson, Boise

2002-01-01

The matter antimatter reaction represents the densest form of energy storage/release known to modern physics: as such it offers one of the most compact sources of power for future deep space exploration. To take the first steps along this path, NASA-Marshall Space Flight Center is developing a storage system referred to as the High Performance Antiproton Trap (HiPAT) with a goal of maintaining 10(exp 12) particles for up to 18 days. Experiments have been performed with this hardware using normal matter (positive hydrogen ions) to assess the device's ability to hold charged particles. These ions are currently created using an electron gun method to ionize background gas; however, this technique is limited by the quantity that can be captured. To circumvent this issue, an ion source is currently being commissioned which will greatly increase the number of ions captured and more closely simulate actual operations expected at an antiproton production facility. Ions have been produced, stored for various time intervals, and then extracted against detectors to measure species, quantity and energy. Radio frequency stabilization has been tested as a method to prolong ion lifetime: results show an increase in the baseline 1/e lifetime of trapped particles from hours to days. Impurities in the residual background gas (typically carbon-containing species CH4, CO, CO2, etc.) present a continuing problem by reducing the trapped hydrogen population through the mechanism of ion charge exchange.

Laser heating tunability by off-resonant irradiation of gold nanoparticles.

PubMed

Hormeño, Silvia; Gregorio-Godoy, Paula; Pérez-Juste, Jorge; Liz-Marzán, Luis M; Juárez, Beatriz H; Arias-Gonzalez, J Ricardo

2014-01-29

Temperature changes in the vicinity of a single absorptive nanostructure caused by local heating have strong implications in technologies such as integrated electronics or biomedicine. Herein, the temperature changes in the vicinity of a single optically trapped spherical Au nanoparticle encapsulated in a thermo-responsive poly(N-isopropylacrylamide) shell (Au@pNIPAM) are studied in detail. Individual beads are trapped in a counter-propagating optical tweezers setup at various laser powers, which allows the overall particle size to be tuned through the phase transition of the thermo-responsive shell. The experimentally obtained sizes measured at different irradiation powers are compared with average size values obtained by dynamic light scattering (DLS) from an ensemble of beads at different temperatures. The size range and the tendency to shrink upon increasing the laser power in the optical trap or by increasing the temperature for DLS agree with reasonable accuracy for both approaches. Discrepancies are evaluated by means of simple models accounting for variations in the thermal conductivity of the polymer, the viscosity of the aqueous solution and the absorption cross section of the coated Au nanoparticle. These results show that these parameters must be taken into account when considering local laser heating experiments in aqueous solution at the nanoscale. Analysis of the stability of the Au@pNIPAM particles in the trap is also theoretically carried out for different particle sizes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An in-vacuo optical levitation trap for high-intensity laser interaction experiments with isolated microtargets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, C. J., E-mail: c.price10@imperial.ac.uk; Giltrap, S.; Stuart, N. H.

2015-03-15

We report on the design, construction, and characterisation of a new class of in-vacuo optical levitation trap optimised for use in high-intensity, high-energy laser interaction experiments. The system uses a focused, vertically propagating continuous wave laser beam to capture and manipulate micro-targets by photon momentum transfer at much longer working distances than commonly used by optical tweezer systems. A high speed (10 kHz) optical imaging and signal acquisition system was implemented for tracking the levitated droplets position and dynamic behaviour under atmospheric and vacuum conditions, with ±5 μm spatial resolution. Optical trapping of 10 ± 4 μm oil droplets inmore » vacuum was demonstrated, over timescales of >1 h at extended distances of ∼40 mm from the final focusing optic. The stability of the levitated droplet was such that it would stay in alignment with a ∼7 μm irradiating beam focal spot for up to 5 min without the need for re-adjustment. The performance of the trap was assessed in a series of high-intensity (10{sup 17} W cm{sup −2}) laser experiments that measured the X-ray source size and inferred free-electron temperature of a single isolated droplet target, along with a measurement of the emitted radio-frequency pulse. These initial tests demonstrated the use of optically levitated microdroplets as a robust target platform for further high-intensity laser interaction and point source studies.« less

An in-vacuo optical levitation trap for high-intensity laser interaction experiments with isolated microtargets

NASA Astrophysics Data System (ADS)

Price, C. J.; Donnelly, T. D.; Giltrap, S.; Stuart, N. H.; Parker, S.; Patankar, S.; Lowe, H. F.; Drew, D.; Gumbrell, E. T.; Smith, R. A.

2015-03-01

We report on the design, construction, and characterisation of a new class of in-vacuo optical levitation trap optimised for use in high-intensity, high-energy laser interaction experiments. The system uses a focused, vertically propagating continuous wave laser beam to capture and manipulate micro-targets by photon momentum transfer at much longer working distances than commonly used by optical tweezer systems. A high speed (10 kHz) optical imaging and signal acquisition system was implemented for tracking the levitated droplets position and dynamic behaviour under atmospheric and vacuum conditions, with ±5 μm spatial resolution. Optical trapping of 10 ± 4 μm oil droplets in vacuum was demonstrated, over timescales of >1 h at extended distances of ˜40 mm from the final focusing optic. The stability of the levitated droplet was such that it would stay in alignment with a ˜7 μm irradiating beam focal spot for up to 5 min without the need for re-adjustment. The performance of the trap was assessed in a series of high-intensity (1017 W cm-2) laser experiments that measured the X-ray source size and inferred free-electron temperature of a single isolated droplet target, along with a measurement of the emitted radio-frequency pulse. These initial tests demonstrated the use of optically levitated microdroplets as a robust target platform for further high-intensity laser interaction and point source studies.

Self-generated zonal flows in the plasma turbulence driven by trapped-ion and trapped-electron instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drouot, T.; Gravier, E.; Reveille, T.

This paper presents a study of zonal flows generated by trapped-electron mode and trapped-ion mode micro turbulence as a function of two plasma parameters—banana width and electron temperature. For this purpose, a gyrokinetic code considering only trapped particles is used. First, an analytical equation giving the predicted level of zonal flows is derived from the quasi-neutrality equation of our model, as a function of the density fluctuation levels and the banana widths. Then, the influence of the banana width on the number of zonal flows occurring in the system is studied using the gyrokinetic code. Finally, the impact of themore » temperature ratio T{sub e}/T{sub i} on the reduction of zonal flows is shown and a close link is highlighted between reduction and different gyro-and-bounce-average ion and electron density fluctuation levels. This reduction is found to be due to the amplitudes of gyro-and-bounce-average density perturbations n{sub e} and n{sub i} gradually becoming closer, which is in agreement with the analytical results given by the quasi-neutrality equation.« less

Unified Electromagnetic-Electronic Design of Light Trapping Silicon Solar Cells

PubMed Central

Boroumand, Javaneh; Das, Sonali; Vázquez-Guardado, Abraham; Franklin, Daniel; Chanda, Debashis

2016-01-01

A three-dimensional unified electromagnetic-electronic model is developed in conjunction with a light trapping scheme in order to predict and maximize combined electron-photon harvesting in ultrathin crystalline silicon solar cells. The comparison between a bare and light trapping cell shows significant enhancement in photon absorption and electron collection. The model further demonstrates that in order to achieve high energy conversion efficiency, charge separation must be optimized through control of the doping profile and surface passivation. Despite having a larger number of surface defect states caused by the surface patterning in light trapping cells, we show that the higher charge carrier generation and collection in this design compensates the absorption and recombination losses and ultimately results in an increase in energy conversion efficiency. The fundamental physics behind this specific design approach is validated through its application to a 3 μm thick functional light trapping solar cell which shows 192% efficiency enhancement with respect to the bare cell of same thickness. Such a unified design approach will pave the path towards achieving the well-known Shockley-Queisser (SQ) limit for c-Si in thin-film (<30 μm) geometries. PMID:27499446

Modifying Operating Cycles to Increase Stability in a LITS

NASA Technical Reports Server (NTRS)

Burt, Eric; Tjoelker, Robert

2009-01-01

The short-term instability in the frequency of a linear-ion-trap frequency standard (LITS) can be reduced by modifying two cycles involved in its operation: (1) the bimodal (bright/dim) cycle of a plasma discharge lamp used for state preparation and detection and (2) a microwave-interrogation cycle. The purpose and effect of the modifications is to enable an increase in the microwave- interrogation cycle time, motivated by the general principle that the short-term uncertainty or instability decreases with increasing microwave-interrogation time. Stated from a slightly different perspective, the effect of modifications is to enable the averaged LITS readings to settle to their longterm stability over a shorter total observation time. The basic principles of a LITS were discussed in several NASA Tech Briefs articles. Here are recapitulated only those items of background information necessary to place the present modifications in context. A LITS includes a microwave local oscillator, the frequency of which is stabilized by comparison with the frequency of a ground-state hyperfine transition of Hg-199(+) ions. In a LITS of the type to which the modifications apply, the comparison involves a combination of optical and micro wave excitation and interrogation of the ions in two collinear ion traps: a quadrupole trap wherein the optical excitation used for state preparation and detection takes place, and a multipole (e.g., 12-pole) trap wherein the microwave interrogation of the clock transition takes place. The ions are initially loaded into the quadrupole trap and are thereafter shuttled between the two traps. This concludes the background information.

An in situ trap capacitance measurement and ion-trapping detection scheme for a Penning ion trap facility.

PubMed

Reza, Ashif; Banerjee, Kumardeb; Das, Parnika; Ray, Kalyankumar; Bandyopadhyay, Subhankar; Dam, Bivas

2017-03-01

This paper presents the design and implementation of an in situ measurement setup for the capacitance of a five electrode Penning ion trap (PIT) facility at room temperature. For implementing a high Q resonant circuit for the detection of trapped electrons/ions in a PIT, the value of the capacitance of the trap assembly is of prime importance. A tunable Colpitts oscillator followed by a unity gain buffer and a low pass filter is designed and successfully implemented for a two-fold purpose: in situ measurement of the trap capacitance when the electric and magnetic fields are turned off and also providing RF power at the desired frequency to the PIT for exciting the trapped ions and subsequent detection. The setup is tested for the in situ measurement of trap capacitance at room temperature and the results are found to comply with those obtained from measurements using a high Q parallel resonant circuit setup driven by a standard RF signal generator. The Colpitts oscillator is also tested successfully for supplying RF power to the high Q resonant circuit, which is required for the detection of trapped electrons/ions.

Stable spin domains in a nondegenerate ultracold gas

NASA Astrophysics Data System (ADS)

Graham, S. D.; Niroomand, D.; Ragan, R. J.; McGuirk, J. M.

2018-05-01

We study the stability of two-domain spin structures in an ultracold gas of magnetically trapped 87Rb atoms above quantum degeneracy. Adding a small effective magnetic field gradient stabilizes the domains via coherent collective spin rotation effects, despite negligibly perturbing the potential energy relative to the thermal energy. We demonstrate that domain stabilization is accomplished through decoupling the dynamics of longitudinal magnetization, which remains in time-independent domains, from transverse magnetization, which undergoes a purely transverse spin wave trapped within the domain wall. We explore the effect of temperature and density on the steady-state domains, and compare our results to a hydrodynamic solution to a quantum Boltzmann equation.

Au-embedded ZnO/NiO hybrid with excellent electrochemical performance as advanced electrode materials for supercapacitor.

PubMed

Zheng, Xin; Yan, Xiaoqin; Sun, Yihui; Bai, Zhiming; Zhang, Guangjie; Shen, Yanwei; Liang, Qijie; Zhang, Yue

2015-02-04

Here we design a nanostructure by embedding Au nanoparticles into ZnO/NiO core-shell composites as supercapacitors electrodes materials. This optimized hybrid electrodes exhibited an excellent electrochemical performance including a long-term cycling stability and a maximum specific areal capacitance of 4.1 F/cm(2) at a current density of 5 mA/cm(2), which is much higher than that of ZnO/NiO hierarchical materials (0.5 F/cm(2)). Such an enhanced property is attributed to the increased electro-electrolyte interfaces, short electron diffusion pathways and good electrical conductivity. Apart from this, electrons can be temporarily trapped and accumulated at the Fermi level (EF') because of the localized schottky barrier at Au/NiO interface in charge process until fill the gap between ZnO and NiO, so that additional electrons can be released during discharge. These results demonstrate that suitable interface engineering may open up new opportunities in the development of high-performance supercapacitors.

The Heidelberg compact electron beam ion traps

NASA Astrophysics Data System (ADS)

Micke, P.; Kühn, S.; Buchauer, L.; Harries, J. R.; Bücking, T. M.; Blaum, K.; Cieluch, A.; Egl, A.; Hollain, D.; Kraemer, S.; Pfeifer, T.; Schmidt, P. O.; Schüssler, R. X.; Schweiger, Ch.; Stöhlker, T.; Sturm, S.; Wolf, R. N.; Bernitt, S.; Crespo López-Urrutia, J. R.

2018-06-01

Electron beam ion traps (EBITs) are ideal tools for both production and study of highly charged ions (HCIs). In order to reduce their construction, maintenance, and operation costs, we have developed a novel, compact, room-temperature design, the Heidelberg Compact EBIT (HC-EBIT). Four already commissioned devices operate at the strongest fields (up to 0.86 T) reported for such EBITs using permanent magnets, run electron beam currents up to 80 mA, and energies up to 10 keV. They demonstrate HCI production, trapping, and extraction of pulsed Ar16+ bunches and continuous 100 pA ion beams of highly charged Xe up to charge state 29+, already with a 4 mA, 2 keV electron beam. Moreover, HC-EBITs offer large solid-angle ports and thus high photon count rates, e.g., in x-ray spectroscopy of dielectronic recombination in HCIs up to Fe24+, achieving an electron-energy resolving power of E/ΔE > 1500 at 5 keV. Besides traditional on-axis electron guns, we have also implemented a novel off-axis gun for laser, synchrotron, and free-electron laser applications, offering clear optical access along the trap axis. We report on its first operation at a synchrotron radiation facility demonstrating the resonant photoexcitation of highly charged oxygen.

Bifurcation analysis for ion acoustic waves in a strongly coupled plasma including trapped electrons

NASA Astrophysics Data System (ADS)

El-Labany, S. K.; El-Taibany, W. F.; Atteya, A.

2018-02-01

The nonlinear ion acoustic wave propagation in a strongly coupled plasma composed of ions and trapped electrons has been investigated. The reductive perturbation method is employed to derive a modified Korteweg-de Vries-Burgers (mKdV-Burgers) equation. To solve this equation in case of dissipative system, the tangent hyperbolic method is used, and a shock wave solution is obtained. Numerical investigations show that, the ion acoustic waves are significantly modified by the effect of polarization force, the trapped electrons and the viscosity coefficients. Applying the bifurcation theory to the dynamical system of the derived mKdV-Burgers equation, the phase portraits of the traveling wave solutions of both of dissipative and non-dissipative systems are analyzed. The present results could be helpful for a better understanding of the waves nonlinear propagation in a strongly coupled plasma, which can be produced by photoionizing laser-cooled and trapped electrons [1], and also in neutron stars or white dwarfs interior.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

DOE PAGES

Vörös, Márton; Brawand, Nicholas P.; Galli, Giulia

2016-11-15

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial formore » charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Lastly, our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.« less

Integrating AgI/AgBr biphasic heterostructures encased by few layer h-BN with enhanced catalytic activity and stability.

PubMed

Wu, Wen; Lv, Xiaomeng; Wang, Jiaxi; Xie, Jimin

2017-06-15

Using freshly prepared water-soluble KBr crystal as facile, low-cost sacrificial template, AgBr nanocubes were synthesized through one-pot precipitation method, then navy bean shaped AgI/AgBr biphasic heterostructures were synthesized through anion-exchange reaction and encased within few-layer h-BN to obtain final product. The obtained heterostructured AgI/AgBr/h-BN composite without plasmonic noble metal nanoparticles was used as stable and high active photocatalyst for dye degradation under visible light irradiation, comparing both with self-prepared normal AgBr, AgBr cubes, AgI/AgBr navy beans and other related catalysts reported in the literature. The significant boosting of activity was attributed to the formation of AgI/AgBr interface and the coupling of few-layer h-BN, the latter of which not only effectively suppresses the reduction of silver ions but greatly enhance the charge separation. Furthermore, it was suggested that the photogenerated holes and superoxide radical were the main active species according to photoelectron chemical measurements, electron spin resonance spin-trap analysis and radical trapping experiments. Finally, the possible mechanism of enhanced photocatalytic activity and stability was discussed and proposed. The work demonstrates that engineering Ag-based semiconductor coupling with h-BN would profit the design strategy for low-cost, solar-driven photocatalysts. Copyright © 2017 Elsevier Inc. All rights reserved.

Definition phase study of the grand tour missions

NASA Technical Reports Server (NTRS)

Simpson, J. A.; Meyer, P.

1972-01-01

The research to define an energetic particle experiment for the OPTGT-MJS missions is reported. The studies reported include: (1) the use of silicon dectectors for low energy, low flux level measurements in the presence of RTG radiation and trapped electrons, (2) high energy proton damage of lithium-drifted and surface barrier silicon detectors, (3) the gas Cerenkov counter, (4) systems for detection of trapped high-energy protons in the presence of trapped electrons, and (5) reliability and redundancy.

Femtosecond Study of Self-Trapped Vibrational Excitons in Crystalline Acetanilide

NASA Astrophysics Data System (ADS)

Edler, J.; Hamm, P.; Scott, A. C.

2002-02-01

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm -1 are identified as the major degrees of freedom that mediate self-trapping. After selective excitation of the free exciton, self-trapping occurs within a few 100 fs. Excitation of the self-trapped states disappears from the spectral window of this investigation on a 1 ps time scale, followed by a slow ground state recovery of the hot ground state within 18 ps.

Femtosecond study of self-trapped vibrational excitons in crystalline acetanilide.

PubMed

Edler, J; Hamm, P; Scott, A C

2002-02-11

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm (-1) are identified as the major degrees of freedom that mediate self-trapping. After selective excitation of the free exciton, self-trapping occurs within a few 100 fs. Excitation of the self-trapped states disappears from the spectral window of this investigation on a 1 ps time scale, followed by a slow ground state recovery of the hot ground state within 18 ps.

Investigation on H-containing shallow trap of hydrogenated TiO2 with in situ Fourier transform infrared diffuse reflection spectroscopy.

PubMed

Han, Bing; Hang Hu, Yun

2017-07-28

A novel technique, high temperature high pressure in situ Fourier transform infrared diffuse reflection spectroscopy, was successfully used to investigate the formation and stability of shallow trap states in P25 TiO 2 nanoparticles. Two types of shallow traps (with and without H atoms) were identified. The H-containing shallow trap can be easily generated by heating in H 2 atmosphere. However, the trap is unstable in vacuum at 600 °C. In contrast, the H-free shallow trap, which can be formed by heating in vacuum, is stable even at 600 °C. The energy gaps between shallow trap states and the conduction band are 0.09 eV for H-containing shallow trap and 0.13 eV for H-free shallow trap, indicating that the H-containing shallow trap state is closer to the conduction band than that without H.

Multipole electrodynamic ion trap geometries for microparticle confinement under standard ambient temperature and pressure conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mihalcea, Bogdan M., E-mail: bogdan.mihalcea@inflpr.ro; Vişan, Gina T.; Ganciu, Mihai

2016-03-21

Trapping of microparticles and aerosols is of great interest for physics and chemistry. We report microparticle trapping in case of multipole linear Paul trap geometries, operating under standard ambient temperature and pressure conditions. An 8- and 12-electrode linear trap geometries have been designed and tested with an aim to achieve trapping for larger number of particles and to study microparticle dynamical stability in electrodynamic fields. We report emergence of planar and volume ordered structures of microparticles, depending on the a.c. trapping frequency and particle specific charge ratio. The electric potential within the trap is mapped using the electrolytic tank method.more » Particle dynamics is simulated using a stochastic Langevin equation. We emphasize extended regions of stable trapping with respect to quadrupole traps, as well as good agreement between experiment and numerical simulations.« less

Auroral-particle precipitation and trapping caused by electrostatic double layers in the ionosphere.

PubMed

Albert, R D; Lindstrom, P J

1970-12-25

Interpretation of high-resolution angular distribution measurements of the primary auroral electron flux detected by a rocket probe launched into a visible aurora from Fort Churchill in the fall of 1966 leads to the following conclusions. The auroral electron flux is nearly monoenergetic and has a quasi-trapped as well as a precipitating component. The quasi-trapped flux appears to be limited to a region defined by magnetic-mirror points and multiple electrostatic double layers in the ionosphere. The electrostatic field of the double-layer distribution enhances the aurora by lowering the magnetic-mirror points and supplying energy to the primary auroral electrons.

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

NASA Astrophysics Data System (ADS)

Baang, Sungkeun; Lee, Hyeonju; Zhang, Xue; Park, Jaehoon; Kim, Won-Pyo; Ko, Young-Woong; Piao, Shang Hao; Choi, Hyoung Jin; Kwon, Jin-Hyuk; Bae, Jin-Hyuk

2018-01-01

We investigate the operational stability of bottom-gate/top-contact-structured indium-oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. Based on the thermogravimetric analysis of the In2O3 precursor solution, we utilize a thermal annealing process at 400 °C for 40 min to prepare the In2O3 films. The results of X-ray photoemission spectroscopy and field-emission scanning electron microscopy show that the electron is the majority carrier in the In2O3 semiconductor film prepared by a spin-coating method and that the film has a polycrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. When constant drain and gate voltages are applied, these TFTs in atmospheric air exhibit a more acute decay in the drain currents with time compared to that observed under vacuum. In the positive gate-bias stress experiments, a decrease in the field-effect mobility and a positive shift in the threshold voltage are invariably observed both in atmospheric air and under vacuum, but such characteristic variations are also found to be more pronounced for the atmospheric-air case. These results are explained in terms of the electron-trapping phenomenon at the grain boundaries in the In2O3 semiconductor, as well as the electrostatic interactions between electrons and polar water molecules.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

PubMed

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-11-04

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

PubMed Central

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-01-01

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

A highly miniaturized vacuum package for a trapped ion atomic clock

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwindt, Peter D. D., E-mail: pschwin@sandia.gov; Jau, Yuan-Yu; Partner, Heather

2016-05-15

We report on the development of a highly miniaturized vacuum package for use in an atomic clock utilizing trapped ytterbium-171 ions. The vacuum package is approximately 1 cm{sup 3} in size and contains a linear quadrupole RF Paul ion trap, miniature neutral Yb sources, and a non-evaporable getter pump. We describe the fabrication process for making the Yb sources and assembling the vacuum package. To prepare the vacuum package for ion trapping, it was evacuated, baked at a high temperature, and then back filled with a helium buffer gas. Once appropriate vacuum conditions were achieved in the package, it wasmore » sealed with a copper pinch-off and was subsequently pumped only by the non-evaporable getter. We demonstrated ion trapping in this vacuum package and the operation of an atomic clock, stabilizing a local oscillator to the 12.6 GHz hyperfine transition of {sup 171}Y b{sup +}. The fractional frequency stability of the clock was measured to be 2 × 10{sup −11}/τ{sup 1/2}.« less

Quantum non demolition measurement of cyclotron excitations in a Penning trap

NASA Technical Reports Server (NTRS)

Marzoli, Irene; Tombesi, Paolo

1993-01-01

The quantum non-demolition measurement of the cyclotron excitations of an electron confined in a Penning trap could be obtained by measuring the resonance frequency of the axial motion, which is coupled to the cyclotron motion through the relativistic shift of the electron mass.

Microfabricated cylindrical ion trap

DOEpatents

Blain, Matthew G.

2005-03-22

A microscale cylindrical ion trap, having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale cylindrical ion trap to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The microscale CIT has a reduced ion mean free path, allowing operation at higher pressures with less expensive and less bulky vacuum pumping system, and with lower battery power than conventional- and miniature-sized ion traps. The reduced electrode voltage enables integration of the microscale cylindrical ion trap with on-chip integrated circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of microscale cylindrical ion traps can be realized in truly field portable, handheld microanalysis systems.

All-optical atom trap as a target for MOTRIMS-like collision experiments

NASA Astrophysics Data System (ADS)

Sharma, S.; Acharya, B. P.; De Silva, A. H. N. C.; Parris, N. W.; Ramsey, B. J.; Romans, K. L.; Dorn, A.; de Jesus, V. L. B.; Fischer, D.

2018-04-01

Momentum-resolved scattering experiments with laser-cooled atomic targets have been performed since almost two decades with magneto-optical trap recoil ion momentum spectroscopy (MOTRIMS) setups. Compared to experiments with gas-jet targets, MOTRIMS features significantly lower target temperatures allowing for an excellent recoil ion momentum resolution. However, the coincident and momentum-resolved detection of electrons was long rendered impossible due to incompatible magnetic field requirements. Here we report on an experimental approach which is based on an all-optical 6Li atom trap that—in contrast to magneto-optical traps—does not require magnetic field gradients in the trapping region. Atom temperatures of about 2 mK and number densities up to 109 cm-3 make this trap ideally suited for momentum-resolved electron-ion coincidence experiments. The overall configuration of the trap is very similar to conventional magneto-optical traps. It mainly requires small modifications of laser beam geometries and polarization which makes it easily implementable in other existing MOTRIMS experiments.

A high-performance Hg(+) trapped ion frequency standard

NASA Technical Reports Server (NTRS)

Prestage, J. D.; Tjoelker, R. L.; Dick, G. J.; Maleki, L.

1992-01-01

A high-performance frequency standard based on (199)Hg(+) ions confined in a hybrid radio frequency (RF)/dc linear ion trap is demonstrated. This trap permits storage of large numbers of ions with reduced susceptibility to the second-order Doppler effect caused by the RF confining fields. A 160-mHz-wide atomic resonance line for the 40.5-GHz clock transition is used to steer the output of a 5-mHz crystal oscillator to obtain a stability of 2 x 10(exp -15) for 24,000-second averaging times. Measurements with a 37-mHz line width for the Hg(+) clock transition demonstrate that the inherent stability for this frequency standard is better than 1 x 10(exp -15) at 10,000-second averaging times.

Influence of e-e+ creation on the radiative trapping in ultraintense fields of colliding laser pulses

NASA Astrophysics Data System (ADS)

Baumann, C.; Pukhov, A.

2016-12-01

The behavior of a thin plasma target irradiated by two counterpropagating laser pulses of ultrahigh intensity is studied in the framework of one- and two-dimensional particle-in-cell simulations. It is found that above an intensity threshold, radiative trapping can focus electrons in the peaks of the electromagnetic field. At even higher intensities, the trapping effect cannot be maintained according to the increasing influence of electron-positron pair production on the laser-plasma dynamics.

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

NASA Astrophysics Data System (ADS)

Yamada, H.; Chonan, H.; Takahashi, T.; Yamada, T.; Shimizu, M.

2018-04-01

In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates. The c-oriented and m-oriented epitaxial layers, grown at a temperature of 1000 °C and V/III ratio of 1000, contained carbon atomic concentrations of 1.7×1016 and 4.0×1015 cm-3, respectively. A hole trap was observed at about 0.89 eV above the valence band maximum by minority carrier transient spectroscopy. The trap concentrations in the c-oriented and m-oriented GaN epitaxial layers were consistent with the carbon atomic concentrations from secondary ion mass spectroscopy and the yellow luminescence intensity at 2.21 eV from photoluminescence. The trap concentrations in the m-oriented GaN epitaxial layers were lower than those in the c-oriented GaN. Two electron traps, 0.24 and 0.61 eV below the conduction band (EC) minimum, were observed in the c-oriented GaN epitaxial layer. In contrast, the m-oriented GaN epitaxial layer was free from the electron trap at EC - 0.24 eV, and the trap concentration at EC - 0.61 eV in the m-oriented GaN epitaxial layer was lower than that in the c-oriented GaN epitaxial layer. The m-oriented GaN epitaxial layer exhibited fewer hole and electron traps compared to the c-oriented GaN epitaxial layers.

Electron self-injection and trapping into an evolving plasma bubble.

PubMed

Kalmykov, S; Yi, S A; Khudik, V; Shvets, G

2009-09-25

The blowout (or bubble) regime of laser wakefield acceleration is promising for generating monochromatic high-energy electron beams out of low-density plasmas. It is shown analytically and by particle-in-cell simulations that self-injection of the background plasma electrons into the quasistatic plasma bubble can be caused by slow temporal expansion of the bubble. Sufficient criteria for the electron trapping and bubble's expansion rate are derived using a semianalytic nonstationary Hamiltonian theory. It is further shown that the combination of bubble's expansion and contraction results in monoenergetic electron beams.

Thermal stability of trapped hydrogen in amorphous carbon thin films on Si substrate using ion beam scattering

NASA Astrophysics Data System (ADS)

Moore, A.; Tecos, G.; Nandasiri, M. I.; Garratt, E.; Wickey, K. J.; Gao, X.; Kayani, A.

2009-11-01

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in samples deposited on silicon substrates with a 3.3 MeV of He++ beam used to perform Rutherford Backscattering Spectroscopy (RBS), Non-Rutherford backscattering Spectroscopy (NRBS) and Elastic Recoil Detection Analysis (ERDA). Thermal stability with respect to trapped hydrogen in the film has been studied. As the films were heated in-situ in the vacuum using a o non-gassy button heater, hydrogen was found to be decreasing around 400° C.

Space Flyable Hg(sup +) Frequency Standards

NASA Technical Reports Server (NTRS)

Prestage, John D.; Maleki, Lute

1994-01-01

We discuss a design for a space based atomic frequency standard (AFS) based on Hg(sup +) ions confined in a linear ion trap. This newly developed AFS should be well suited for space borne applications because it can supply the ultra-high stability of a H-maser but its total mass is comparable to that of a NAVSTAR/GPS cesium clock, i.e., about 11kg. This paper will compare the proposed Hg(sup +) AFS to the present day GPS cesium standards to arrive at the 11 kg mass estimate. The proposed space borne Hg(sup +) standard is based upon the recently developed extended linear ion trap architecture which has reduced the size of existing trapped Hg(sup +) standards to a physics package which is comparable in size to a cesium beam tube. The demonstrated frequency stability to below 10(sup -15) of existing Hg(sup +) standards should be maintained or even improved upon in this new architecture. This clock would deliver far more frequency stability per kilogram than any current day space qualified standard.

Determination of the ReA Electron Beam Ion Trap electron beam radius and current density with an X-ray pinhole camera

NASA Astrophysics Data System (ADS)

Baumann, Thomas M.; Lapierre, Alain; Kittimanapun, Kritsada; Schwarz, Stefan; Leitner, Daniela; Bollen, Georg

2014-07-01

The Electron Beam Ion Trap (EBIT) of the National Superconducting Cyclotron Laboratory at Michigan State University is used as a charge booster and injector for the currently commissioned rare isotope re-accelerator facility ReA. This EBIT charge breeder is equipped with a unique superconducting magnet configuration, a combination of a solenoid and a pair of Helmholtz coils, allowing for a direct observation of the ion cloud while maintaining the advantages of a long ion trapping region. The current density of its electron beam is a key factor for efficient capture and fast charge breeding of continuously injected, short-lived isotope beams. It depends on the radius of the magnetically compressed electron beam. This radius is measured by imaging the highly charged ion cloud trapped within the electron beam with a pinhole camera, which is sensitive to X-rays emitted by the ions with photon energies between 2 keV and 10 keV. The 80%-radius of a cylindrical 800 mA electron beam with an energy of 15 keV is determined to be r_{80%}=(212± 19)μm in a 4 T magnetic field. From this, a current density of j = (454 ± 83)A/cm2 is derived. These results are in good agreement with electron beam trajectory simulations performed with TriComp and serve as a test for future electron gun design developments.

Impact of Shock Front Rippling and Self-reformation on the Electron Dynamics at Low-Mach-number Shocks

NASA Astrophysics Data System (ADS)

Yang, Zhongwei; Lu, Quanming; Liu, Ying D.; Wang, Rui

2018-04-01

Electron dynamics at low-Mach-number collisionless shocks are investigated by using two-dimensional electromagnetic particle-in-cell simulations with various shock normal angles. We found: (1) The reflected ions and incident electrons at the shock front provide an effective mechanism for the quasi-electrostatic wave generation due to the charge-separation. A fraction of incident electrons can be effectively trapped and accelerated at the leading edge of the shock foot. (2) At quasi-perpendicular shocks, the electron trapping and reflection is nonuniform due to the shock rippling along the shock surface and is more likely to take place at some locations accompanied by intense reflected ion-beams. The electron trapping process has a periodical evolution over time due to the shock front self-reformation, which is controlled by ion dynamics. Thus, this is a cross-scale coupling phenomenon. (3) At quasi-parallel shocks, reflected ions can travel far back upstream. Consequently, quasi-electrostatic waves can be excited in the shock transition and the foreshock region. The electron trajectory analysis shows these waves can trap electrons at the foot region and reflect a fraction of them far back upstream. Simulation runs in this paper indicate that the micro-turbulence at the shock foot can provide a possible scenario for producing the reflected electron beam, which is a basic condition for the type II radio burst emission at low-Mach-number interplanetary shocks driven by Coronal Mass Ejections (CMEs).

Predicting Stored Grain Insect Population Densities Using an Electronic Probe Trap

USDA-ARS?s Scientific Manuscript database

Manual sampling of insects in stored grain is a laborious and time consuming process. Automation of grain sampling should help to increase the adoption of stored-grain integrated pest management. A new commercial electronic grain probe trap (OPI Insector™) has recently been marketed. We field tested...

Insect Biometrics: Optoacoustic Signal Processing and Its Applications to Remote Monitoring of McPhail Type Traps.

PubMed

Potamitis, Ilyas; Rigakis, Iraklis; Fysarakis, Konstantinos

2015-01-01

Monitoring traps are important components of integrated pest management applied against important fruit fly pests, including Bactrocera oleae (Gmelin) and Ceratitis capitata (Widemann), Diptera of the Tephritidae family, which effect a crop-loss/per year calculated in billions of euros worldwide. Pests can be controlled with ground pesticide sprays, the efficiency of which depends on knowing the time, location and extent of infestations as early as possible. Trap inspection is currently carried out manually, using the McPhail trap, and the mass spraying is decided based on a decision protocol. We introduce the term 'insect biometrics' in the context of entomology as a measure of a characteristic of the insect (in our case, the spectrum of its wingbeat) that allows us to identify its species and make devices to help face old enemies with modern means. We modify a McPhail type trap into becoming electronic by installing an array of photoreceptors coupled to an infrared emitter, guarding the entrance of the trap. The beating wings of insects flying in the trap intercept the light and the light fluctuation is turned to a recording. Custom-made electronics are developed that are placed as an external add-on kit, without altering the internal space of the trap. Counts from the trap are transmitted using a mobile communication network. This trap introduces a new automated remote-monitoring method different to audio and vision-based systems. We evaluate our trap in large number of insects in the laboratory by enclosing the electronic trap in insectary cages. Our experiments assess the potential of delivering reliable data that can be used to initialize reliably the spraying process at large scales but to also monitor the impact of the spraying process as it eliminates the time-lag between acquiring and delivering insect counts to a central agency.

Insect Biometrics: Optoacoustic Signal Processing and Its Applications to Remote Monitoring of McPhail Type Traps

PubMed Central

Potamitis, Ilyas; Rigakis, Iraklis; Fysarakis, Konstantinos

2015-01-01

Monitoring traps are important components of integrated pest management applied against important fruit fly pests, including Bactrocera oleae (Gmelin) and Ceratitis capitata (Widemann), Diptera of the Tephritidae family, which effect a crop-loss/per year calculated in billions of euros worldwide. Pests can be controlled with ground pesticide sprays, the efficiency of which depends on knowing the time, location and extent of infestations as early as possible. Trap inspection is currently carried out manually, using the McPhail trap, and the mass spraying is decided based on a decision protocol. We introduce the term ‘insect biometrics’ in the context of entomology as a measure of a characteristic of the insect (in our case, the spectrum of its wingbeat) that allows us to identify its species and make devices to help face old enemies with modern means. We modify a McPhail type trap into becoming electronic by installing an array of photoreceptors coupled to an infrared emitter, guarding the entrance of the trap. The beating wings of insects flying in the trap intercept the light and the light fluctuation is turned to a recording. Custom-made electronics are developed that are placed as an external add-on kit, without altering the internal space of the trap. Counts from the trap are transmitted using a mobile communication network. This trap introduces a new automated remote-monitoring method different to audio and vision-based systems. We evaluate our trap in large number of insects in the laboratory by enclosing the electronic trap in insectary cages. Our experiments assess the potential of delivering reliable data that can be used to initialize reliably the spraying process at large scales but to also monitor the impact of the spraying process as it eliminates the time-lag between acquiring and delivering insect counts to a central agency. PMID:26544845

Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Villis, B. J.; Sanquer, M.; Jehl, X.

2014-06-09

The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are ablemore » to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability.« less

Confinement time exceeding one second for a toroidal electron plasma.

PubMed

Marler, J P; Stoneking, M R

2008-04-18

Nearly steady-state electron plasmas are trapped in a toroidal magnetic field for the first time. We report the first results from a new toroidal electron plasma experiment, the Lawrence Non-neutral Torus II, in which electron densities on the order of 10(7) cm(-3) are trapped in a 270-degree toroidal arc (670 G toroidal magnetic field) by application of trapping potentials to segments of a conducting shell. The total charge inferred from measurements of the frequency of the m=1 diocotron mode is observed to decay on a 3 s time scale, a time scale that approaches the predicted limit due to magnetic pumping transport. Three seconds represents approximately equal to 10(5) periods of the lowest frequency plasma mode, indicating that nearly steady-state conditions are achieved.

An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yamamoto, Norio; Uwai, Kunihiko; Takahei, Kenichiro

1989-04-01

Deep levels in high-purity InP crystal grown by metalorganic chemical vapor deposition (MOCVD) have been measured by deep level transient spectroscopy. While no electron traps are observed in the samples grown at 600 °C with a [PH3]/[In(C2H5)3] of 170, three electron traps with activation energies of 0.80, 0.44, and 0.24 eV were observed in the samples grown at 500 °C with the same [PH3]/[In(C2H5)3]. The 0.44-eV trap, whose capture cross section is 1.5×10-18 cm2, observed at a low [PH3]/[In(C2H5)3] shows a decrease in concentration as [PH3]/[In(C2H5)3] is increased, and becomes less than 5×1012 cm-3 at a [PH3]/[In(C2H5)3] of more than 170. The comparison of annealing behavior of this trap in MOCVD InP and that in liquid-encapsulated Czochralski InP suggests that the 0.44-eV trap is related to a complex formed from residual impurities and native defects related to a phosphorus deficiency such as phosphorus vacancies or indium interstitials. This trap is found to show configurational bistability similar to that observed for the trap in an Fe-doped InP, MFe center.

Trajectories of electrons with large longitudinal momenta in the phase plane during surfatron acceleration by an electromagnetic wave

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mkrtichyan, G. S., E-mail: hay-13@mail.ru

2015-07-15

The trajectories of electrons with large longitudinal momenta in the phase plane in the course of their surfatron acceleration by an electromagnetic wave propagating in space plasma across the external magnetic field are analyzed. Electrons with large longitudinal momenta are trapped immediately if the initial wave phase Ψ(0) on the particle trajectory is positive. For negative values of Ψ(0), no electrons trapping by the wave is observed over the available computational times. According to numerical calculations, the trajectories of trapped particles in the phase plane have a singular point of the stable focus type and the behavior of the trajectorymore » corresponds to the motion in a complex nonstationary effective potential well. For some initial phases, electrons are confined in the region of the accelerating electric field for relatively short time, the energy gain being about 50–130% and more.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rowland, Clare E.; Fedin, Igor; Diroll, Benjamin T.

Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology upmore » to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.« less

Spectroscopy of a Synthetic Trapped Ion Qubit

NASA Astrophysics Data System (ADS)

Hucul, David; Christensen, Justin E.; Hudson, Eric R.; Campbell, Wesley C.

2017-09-01

133Ba+ has been identified as an attractive ion for quantum information processing due to the unique combination of its spin-1 /2 nucleus and visible wavelength electronic transitions. Using a microgram source of radioactive material, we trap and laser cool the synthetic A =133 radioisotope of barium II in a radio-frequency ion trap. Using the same, single trapped atom, we measure the isotope shifts and hyperfine structure of the 62P1 /2↔62S1 /2 and 62P1 /2↔52D3 /2 electronic transitions that are needed for laser cooling, state preparation, and state detection of the clock-state hyperfine and optical qubits. We also report the 62P1 /2↔52D3 /2 electronic transition isotope shift for the rare A =130 and 132 barium nuclides, completing the spectroscopic characterization necessary for laser cooling all long-lived barium II isotopes.

Ion acoustic solitons in an electronegative plasma with electron trapping and nonextensivity effects

NASA Astrophysics Data System (ADS)

Ali Shan, S.

2018-03-01

The impact of electron trapping and nonextensivity on the low frequency ion acoustic solitary waves in an electronegative plasma is investigated. The energy integral equation with the Sagdeev truncated approach is derived, which is then solved with the help of suitable parameters and necessary conditions to get the solitary structures. The minimum Mach (M) number needed to calculate the solitary structures is found to be varying under the impact of trapping efficiency determining factor β and entropic index q. The results have been illustrated with the help of physically acceptable parameters and the amplitude of nonlinear solitary structures is found to be modified significantly because of electron trapping efficiency β and entropic index q. This study has been made with reference to Laboratory observation, which can also be helpful in Space and astrophysical plasmas where electronegative plasmas have been reported.

Assembling, cleaning, and testing a unique prototype open-ended cylindrical penning trap

NASA Astrophysics Data System (ADS)

Marble, Kassie; Shidling, Praveen; Melconian, Dan

2016-09-01

A new experimental beamline containing a prototype cylindrical penning trap has recently been constructed at the Cyclotron Laboratory at Texas A&M University. The new beamline will enable precision experiments that enhance our understanding of the limits on non-SM processes in the weak interaction through the measurement of the β- ν correlation parameter for T = 2 ,0+ ->0+ supper allowed β-delayed proton emitters. The prototype TAMU TRAP consists of an open-ended cylindrical penning trap of diameter of 90 mm with gold-plated electrodes of oxygen free high conductivity copper to prevent oxidation. The trap's electric quadrupole field is provided by a SHIP TRAPS RF electronic circuit to the four segmented electrodes at the center of the trap while the trap's 7 Tesla radial magnetic field is provided by an Agilent 210 ASR magnet. A discussion of the assembly of the prototype TAMU TRAP, construction of the RF electronic circuit, the experimental set up and alignment of the beamline will be presented. The method used to test the prototype penning trap using an ion source, Faraday cups, and Micro Chanel Plate (MCP) detectors will also be discussed. Work supported by the U.S. Department of Energy under Grant No. DE-FG02-11ER41747 and the National Science Foundation.

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

NASA Astrophysics Data System (ADS)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Small polarons and point defects in LaFeO3

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

The proton-conductive perovskite-type LaFeO3 is a promising negative-electrode material for Ni/metal-hydride (Ni-MH) batteries. It has a discharge capacity up to 530 mAhg-1 at 333 K, which is significantly higher than commercialized AB5-type alloys. To elucidate the underlying mechanism of this performance, we have investigated the structural and electronic properties of bulk LaFeO3, as well as the effect of point defects, using hybrid density functional methods. LaFeO3 is antiferromagnetic in the ground state with a band gap of 3.54 eV. Small hole and electron polarons can form through self- or point-defect-assisted trapping. We find that La vacancies and Sr substitutional on La sites are shallow acceptors with the induced holes trapped as small polarons, while O and Fe vacancies are deep defect centers. Hydrogen interstitials behave like shallow donors, with the donor electrons localized on nearby iron sites as electron polarons. With a large trapping energy, these polarons can act as electron or hole traps and affect the electrical performance of LaFeO3 as the negative electrode for Ni-MH batteries. We acknowledge DOE for financial support.

Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N.; Sangwan, Vinod K.; Jariwala, Deep; Schmucker, Scott W.; Marks, Tobin J.; Hersam, Mark C.

2017-02-01

Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

PubMed

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

Characterization of trapped charges distribution in terms of mirror plot curve.

PubMed

Al-Obaidi, Hassan N; Mahdi, Ali S; Khaleel, Imad H

2018-01-01

Accumulation of charges (electrons) at the specimen surface in scanning electron microscope (SEM) lead to generate an electrostatic potential. By using the method of image charges, this potential is defined in the chamber's space of such apparatus. The deduced formula is expressed in terms a general volumetric distribution which proposed to be an infinitesimal spherical extension. With aid of a binomial theorem the defined potential is expanded to a multipolar form. Then resultant formula is adopted to modify a novel mirror plot equation so as to detect the real distribution of trapped charges. Simulation results reveal that trapped charges may take a various sort of arrangement such as monopole, quadruple and octuple. But existence of any of these arrangements alone may never be take place, rather are some a formations of a mix of them. Influence of each type of these profiles depends on the distance between the incident electron and surface of a sample. Result also shows that trapped charge's amount of trapped charges can refer to a threshold for failing of point charge approximation. Copyright © 2017 Elsevier B.V. All rights reserved.

Proton-Induced Trap States, Injection and Recombination Dynamics in Water-Splitting Dye-Sensitized Photoelectrochemical Cells.

PubMed

McCool, Nicholas S; Swierk, John R; Nemes, Coleen T; Saunders, Timothy P; Schmuttenmaer, Charles A; Mallouk, Thomas E

2016-07-06

Water-splitting dye-sensitized photoelectrochemical cells (WS-DSPECs) utilize a sensitized metal oxide and a water oxidation catalyst in order to generate hydrogen and oxygen from water. Although the Faradaic efficiency of water splitting is close to unity, the recombination of photogenerated electrons with oxidized dye molecules causes the quantum efficiency of these devices to be low. It is therefore important to understand recombination mechanisms in order to develop strategies to minimize them. In this paper, we discuss the role of proton intercalation in the formation of recombination centers. Proton intercalation forms nonmobile surface trap states that persist on time scales that are orders of magnitude longer than the electron lifetime in TiO2. As a result of electron trapping, recombination with surface-bound oxidized dye molecules occurs. We report a method for effectively removing the surface trap states by mildly heating the electrodes under vacuum, which appears to primarily improve the injection kinetics without affecting bulk trapping dynamics, further stressing the importance of proton control in WS-DSPECs.

First-principles study of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material

NASA Astrophysics Data System (ADS)

Duan, H.; Dong, Y. Z.; Huang, Y.; Hu, Y. H.; Chen, X. S.

2016-01-01

Electronic structures of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material are investigated using first-principles calculations. Si vacancies are too high in energy to play any role in the persistent luminescence of Sr2MgSi2O7 phosphor. Mg vacancies form easier than Sr vacancies as a result of strain relief. Among all the vacancies, O1 vacancies stand out as a likely candidate because they are the most favorable in energy and introduce an empty triply degenerate state just below the CBM and a fully-occupied singlet state at ~1 eV above the VBM, constituting in this case effective hole trap level and electron trap levels, respectively. Mg vacancies are unlikely to explain the persistent luminescence because of its too shallow electron trap level but they may compensate the hole trap associated with O1 vacancies. We yield consistent evidence for the defect physics of these vacancy defects on the basis of the equilibrium properties of Sr2MgSi2O7, total-energy calculations, and electronic structures. The persistent luminescence mechanism of Sr2MgSi2O7:Eu2+, Dy3+ phosphor is also discussed based on our results for O1 vacancies trap center. Our results provide a guide to more refined experiments to control intrinsic traps, whereby probing synthetic strategies toward new improved phosphors.

Influence of an electric field on photostimulated states in NH4BPh4 films

NASA Astrophysics Data System (ADS)

Antonova, O. V.; Nadolinny, V. A.; Il'inchik, E. A.; Trubin, S. V.

2012-10-01

The influence of an electric field on stable photostimulated triplet states of NH4BPh4 at a temperature of 77 K have been studied by EPR spectroscopy. It has been established that, on exposure to UV radiation, electron capture by traps in the band gaps takes place with formation of triplet state. After application of an electric field, triplet states are destructed because, with an increase in the applied voltage, a gradual inclination of energy bands takes place and electrons found in traps on different energy levels are released. The assumption that captured electrons are found in traps on different energy levels is confirmed by earlier studies of thermoluminescence spectra.

Origin of the different transport properties of electron and hole polarons in an ambipolar polyselenophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Chen, Zhuoying; Bird, Matthew; Lemaur, Vincent; Radtke, Guillaume; Cornil, Jérôme; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning

2011-09-01

Understanding the mechanisms limiting ambipolar transport in conjugated polymer field-effect transistors (FETs) is of both fundamental and practical interest. Here, we present a systematic study comparing hole and electron charge transport in an ambipolar conjugated polymer, semicrystalline poly(3,3''-di-n-decylterselenophene) (PSSS). Starting from a detailed analysis of the device characteristics and temperature/charge-density dependence of the mobility, we interpret the difference between hole and electron transport through both the Vissenberg-Matters and the mobility-edge model. To obtain microscopic insight into the quantum mechanical wave function of the charges at a molecular level, we combine charge modulation spectroscopy (CMS) measuring the charge-induced absorption signatures from positive and negative polarons in these ambipolar FETs with corresponding density functional theory (DFT) calculations. We observe a significantly higher switch-on voltage for electrons than for holes due to deep electron trap states, but also a higher activation energy of the mobility for mobile electrons. The CMS spectra reveal that the electrons that remain mobile and contribute to the FET current have a wave function that is more localized onto a single polymer chain than that of holes, which is extended over several polymer chains. We interpret this as evidence that the transport properties of the mobile electrons in PSSS are still affected by the presence of deep electron traps. The more localized electron state could be due to the mobile electrons interacting with shallow trap states in the vicinity of a chemical, potentially water-related, impurity that might precede the capture of the electron into a deeply trapped state.

Doughnut shape atom traps with arbitrary inclination

NASA Astrophysics Data System (ADS)

Masegosa, R. R. Y.; Moya-Cessa, H.; Chavez-Cerda, S.

2006-02-01

Since the invention of magneto-optical trap (MOT), there have been several experimental and theoretical studies of the density distribution in these devices. To the best of our knowledge, only horizontal orbital traps have been observed, perpendicular to the coil axis. In this work we report the observation of distributions of trapped atoms in pure circular orbits without a nucleus whose orbital plane is tilted up to 90 degrees with respect to the horizontal plane. We have used a stabilized time phase optical array in our experiments and conventional equipment used for MOT.

Effect of oxygen, moisture and illumination on the stability and reliability of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) OTFTs during operation and storage.

PubMed

Ding, Ziqian; Abbas, Gamal; Assender, Hazel E; Morrison, John J; Yeates, Stephen G; Patchett, Eifion R; Taylor, D Martin

2014-09-10

We report a systemic study of the stability of organic thin film transistors (OTFTs) both in storage and under operation. Apart from a thin polystyrene buffer layer spin-coated onto the gate dielectric, the constituent parts of the OTFTs were all prepared by vacuum evaporation. The OTFTs are based on the semiconducting small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) deposited onto the surface of a polystyrene-buffered in situ polymerized diacrylate gate insulator. Over a period of 9 months, no degradation of the hole mobility occurred in devices stored either in the dark in dry air or in uncontrolled air and normal laboratory fluorescent lighting conditions. In the latter case, rather than decreasing, the mobility actually increased almost 2-fold to 1.5 cm(2)/(V · s). The devices also showed good stability during repeat on/off cycles in the dark in dry air. Exposure to oxygen and light during the on/off cycles led to a positive shift of the transfer curves due to electron trapping when the DNTT was biased into depletion by the application of positive gate voltage. When operated in accumulation, negative gate voltage under the same conditions, the transfer curves were stable. When voltage cycling in moist air in the dark, the transfer curves shifted to negative voltages, thought to be due to the generation of hole traps either in the semiconductor or its interface with the dielectric layer. When subjected to gate bias stress in dry air in the dark for at least 144 h, the device characteristics remained stable.

Charge Storage, Conductivity and Charge Profiles of Insulators as Related to Spacecraft Charging

NASA Technical Reports Server (NTRS)

Dennison, J. R.; Swaminathan, Prasanna; Frederickson, A. R.

2004-01-01

Dissipation of charges built up near the surface of insulators due to space environment interaction is central to understanding spacecraft charging. Conductivity of insulating materials is key to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. To understand these processes requires knowledge of how charge is deposited within the insulator, the mechanisms for charge trapping and charge transport within the insulator, and how the profile of trapped charge affects the transport and emission of charges from insulators. One must consider generation of mobile electrons and holes, their trapping, thermal de-trapping, mobility and recombination. Conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator, rather than by flow of current across two electrodes around the sample. We have found that conductivity determined from charge storage decay methods is 102 to 104 smaller than values obtained from classical ASTM and IEC methods for a variety of thin film insulating samples. For typical spacecraft charging conditions, classical conductivity predicts decay times on the order of minutes to hours (less than typical orbit periods); however, the higher charge storage conductivities predict decay times on the order of weeks to months leading to accumulation of charge with subsequent orbits. We found experimental evidence that penetration profiles of radiation and light are exceedingly important, and that internal electric fields due to charge profiles and high-field conduction by trapped electrons must be considered for space applications. We have also studied whether the decay constants depend on incident voltage and flux or on internal charge distributions and electric fields; light-activated discharge of surface charge to distinguish among differing charge trapping centers; and radiation-induced conductivity. Our experiments also show that "Malter" electron emission occurs for hours after turning off the electron beam. This Malter emission similar to emission due to negative electron affinity in semiconductors is a result of the prior radiation or optical excitations of valence electrons and their slow drift among traps towards the surface where they are subsequently emitted. This work is supported through funding from the NASA Space Environments and Effects Program.

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

2018-05-01

This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization

NASA Astrophysics Data System (ADS)

Hu, Yin; White, Marvin H.

1993-10-01

A new analytical model is developed to investigate the influence of the charge loss processes in the retention mode of the SONOS NVSM device. The model considers charge loss by the following processes: (1) electron back-tunneling from the nitride traps to the Si conduction band, (2) electron back-tunneling from the nitride traps to the Si/SiO 2 interface traps and (3) hole injection from the Si valence band to the nitride traps. An amphoteric trap charge distribution is used in this model. The new charge retention model predicts that process (1) determines the short term retention, while processes (2) and (3) determine the long term retention. Good agreement has been reached between the results of analytical calculations and the experimental retention data on both surface channel and buried channel SONOS devices.

An improved model to estimate trapping parameters in polymeric materials and its application on normal and aged low-density polyethylenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ning, E-mail: nl4g12@soton.ac.uk; He, Miao; Alghamdi, Hisham

2015-08-14

Trapping parameters can be considered as one of the important attributes to describe polymeric materials. In the present paper, a more accurate charge dynamics model has been developed, which takes account of charge dynamics in both volts-on and off stage into simulation. By fitting with measured charge data with the highest R-square value, trapping parameters together with injection barrier of both normal and aged low-density polyethylene samples were estimated using the improved model. The results show that, after long-term ageing process, the injection barriers of both electrons and holes is lowered, overall trap depth is shallower, and trap density becomesmore » much greater. Additionally, the changes in parameters for electrons are more sensitive than those of holes after ageing.« less

Scalable digital hardware for a trapped ion quantum computer

NASA Astrophysics Data System (ADS)

Mount, Emily; Gaultney, Daniel; Vrijsen, Geert; Adams, Michael; Baek, So-Young; Hudek, Kai; Isabella, Louis; Crain, Stephen; van Rynbach, Andre; Maunz, Peter; Kim, Jungsang

2016-12-01

Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them. Modular ion trap quantum computer architectures address scalability by constructing individual quantum processors interconnected via a network of quantum communication channels. Successful operation of such quantum hardware requires a fully programmable classical control system capable of frequency stabilizing the continuous wave lasers necessary for loading, cooling, initialization, and detection of the ion qubits, stabilizing the optical frequency combs used to drive logic gate operations on the ion qubits, providing a large number of analog voltage sources to drive the trap electrodes, and a scheme for maintaining phase coherence among all the controllers that manipulate the qubits. In this work, we describe scalable solutions to these hardware development challenges.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

NASA Astrophysics Data System (ADS)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.

PubMed

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-27

The threshold voltage instabilities and huge hysteresis of MoS 2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS 2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS 2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS 2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Trapping effects in irradiated and avalanche-injected MOS capacitors

NASA Technical Reports Server (NTRS)

Bakowski, M.; Cockrum, R. H.; Zamani, N.; Maserjian, J.; Viswanathan, C. R.

1978-01-01

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Piezoelectrically-induced trap-depth reduction model of elastico-mechanoluminescent materials

NASA Astrophysics Data System (ADS)

Chandra, B. P.; Chandra, V. K.; Jha, Piyush

2015-03-01

Considering the detrapping of charge carriers due to reduction in trap-depth caused by piezoelectric field produced by applied pressure, an expression is derived for the detrapping rate of electrons. Then, an expression is obtained for the rate of generation of excited ions produced during capture of detrapped electrons by Eu3+ ions in persistent luminescent materials or by the energy released during electron-hole recombination in ZnS:Mn crystals. Finally, an expression is explored for the elastico-mechanoluminescence (EML) intensity, which is able to explain satisfactorily the characteristics of EML for the application of static pressure as well as for impact pressure. The total number of detrapped electrons and the total EML intensity are found to increase linearly with the electrostatic energy of the crystals in piezoelectric field. It is shown that the EML intensity should increase with the EML efficiency, number of crystallites (volume of sample), concentration of local piezoelectric regions in crystallites, piezoelectric constant of local piezoelectric regions, average length of the local piezoelectric regions, total number of electron traps, pressing rate, and applied pressure, and it should be higher for the materials having low value of threshold pressure and low value of trap-depth in unstressed condition. On the basis of the piezoelectrically-induced trap-depth reduction model of EML reported in the present investigation novel intense elastico mechanoluminescent materials having repetitive EML with undiminished intensity for successive loadings can be tailored which may find applications in sensing, imaging, lighting, colored displays, and other mechano-optical devices.

Linearized theory of inhomogeneous multiple 'water-bag' plasmas

NASA Technical Reports Server (NTRS)

Bloomberg, H. W.; Berk, H. L.

1973-01-01

Equations are derived for describing the inhomogeneous equilibrium and small deviations from the equilibrium, giving particular attention to systems with trapped particles. An investigation is conducted of periodic systems with a single trapped-particle water bag, taking into account the behavior of the perturbation equations at the turning points. An outline is provided concerning a procedure for obtaining the eigenvalues. The results of stability calculations connected with the sideband effects are considered along with questions regarding the general applicability of the multiple water-bag approach in stability calculations.

Hybrid quantum systems with trapped charged particles

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Simmonds, Raymond W.; Leibfried, Dietrich; Wineland, David J.

2017-02-01

Trapped charged particles have been at the forefront of quantum information processing (QIP) for a few decades now, with deterministic two-qubit logic gates reaching record fidelities of 99.9 % and single-qubit operations of much higher fidelity. In a hybrid system involving trapped charges, quantum degrees of freedom of macroscopic objects such as bulk acoustic resonators, superconducting circuits, or nanomechanical membranes, couple to the trapped charges and ideally inherit the coherent properties of the charges. The hybrid system therefore implements a "quantum transducer," where the quantum reality (i.e., superpositions and entanglement) of small objects is extended to include the larger object. Although a hybrid quantum system with trapped charges could be valuable both for fundamental research and for QIP applications, no such system exists today. Here we study theoretically the possibilities of coupling the quantum-mechanical motion of a trapped charged particle (e.g., an ion or electron) to the quantum degrees of freedom of superconducting devices, nanomechanical resonators, and quartz bulk acoustic wave resonators. For each case, we estimate the coupling rate between the charged particle and its macroscopic counterpart and compare it to the decoherence rate, i.e., the rate at which quantum superposition decays. A hybrid system can only be considered quantum if the coupling rate significantly exceeds all decoherence rates. Our approach is to examine specific examples by using parameters that are experimentally attainable in the foreseeable future. We conclude that hybrid quantum systems involving a single atomic ion are unfavorable compared with the use of a single electron because the coupling rates between the ion and its counterpart are slower than the expected decoherence rates. A system based on trapped electrons, on the other hand, might have coupling rates that significantly exceed decoherence rates. Moreover, it might have appealing properties such as fast entangling gates, long coherence, and flexible topology that is fully electronic in nature. Realizing such a system, however, is technologically challenging because it requires accommodating both a trapping technology and superconducting circuitry in a compatible manner. We review some of the challenges involved, such as the required trap parameters, electron sources, electrical circuitry, and cooling schemes in order to promote further investigations towards the realization of such a hybrid system.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

Assessing the relative stabilities of engineered hemoglobins using electrospray mass spectrometry.

PubMed

Apostol, I

1999-07-15

An ion trap mass spectrometer equipped with an electrospray source was used to examine the relative thermodynamic stabilities of various hemoglobins with respect to both tetramer dissociation and hemin dissociation. The results demonstrated that the stability of hemoglobin molecules can be differentiated by the amount of applied collision-induced dissociation (CID) energy necessary to break up the intact tetramer into its constituent globins. The stability of the intact tetramer was affected by single mutations in the beta-globins. The stabilities of the constituent hologlobins were assessed via trap CID of selected ions. The results demonstrated the importance of the contributions of the hologlobin components to the stability of the intact tetramer. Genetic fusion of two alpha-globins, through the introduction of a single glycine residue between the C-terminus of one alpha-chain and the N-terminus of the second, significantly increased the stability of the hemoglobin pseudo-tetramer. Chemical crosslinking of the beta-globins in addition to genetic fusion of alpha-globins further stabilized the hemoglobin molecule. A dihemoglobin molecule produced by the genetic fusion of two di-alpha-globins with a flexible linker demonstrated a decreased stability relative to the corresponding monohemoglobin. Copyright 1999 Academic Press.

A tunable electron beam source using trapping of electrons in a density down-ramp in laser wakefield acceleration.

PubMed

Ekerfelt, Henrik; Hansson, Martin; Gallardo González, Isabel; Davoine, Xavier; Lundh, Olle

2017-09-25

One challenge in the development of laser wakefield accelerators is to demonstrate sufficient control and reproducibility of the parameters of the generated bunches of accelerated electrons. Here we report on a numerical study, where we demonstrate that trapping using density down-ramps allows for tuning of several electron bunch parameters by varying the properties of the density down-ramp. We show that the electron bunch length is determined by the difference in density before and after the ramp. Furthermore, the transverse emittance of the bunch is controlled by the steepness of the ramp. Finally, the amount of trapped charge depends both on the density difference and on the steepness of the ramp. We emphasize that both parameters of the density ramp are feasible to vary experimentally. We therefore conclude that this tunable electron accelerator makes it suitable for a wide range of applications, from those requiring short pulse length and low emittance, such as the free-electron lasers, to those requiring high-charge, large-emittance bunches to maximize betatron X-ray generation.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes ofmore » both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.« less

Magnetic field and dielectric environment effects on an exciton trapped by an ionized donor in a spherical quantum dot

NASA Astrophysics Data System (ADS)

Aghoutane, N.; Feddi, E.; El-Yadri, M.; Bosch Bailach, J.; Dujardin, F.; Duque, C. A.

2017-11-01

Magnetic field and host dielectric environment effects on the binding energy of an exciton trapped by an ionized donor in spherical quantum dot are investigated. In the framework of the effective mass approximation and by using a variational method, the calculations have been performed by developing a robust ten-terms wave function taking into account the different inter-particles correlations and the distortion of symmetry induced by the orientation of the applied magnetic field. The binding and the localization energies are determined as functions of dot size and magnetic field strength. It appears that the variation of magnetic shift obeys a quadratic law for low magnetic fields regime while, for strong magnetic fields, this shift tends to be linear versus the magnetic field strength. The stability of this complex subjected to a magnetic field is also discussed according to the electron-hole ratio and the dielectric constant of the surrounding medium. A last point to highlight is that the Haynes' rule remains valid even in the presence of an applied magnetic field.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Computer simulations of ions in radio-frequency traps

NASA Technical Reports Server (NTRS)

Williams, A.; Prestage, J. D.; Maleki, L.; Djomehri, J.; Harabetian, E.

1990-01-01

The motion of ions in a trapped-ion frequency standard affects the stability of the standard. In order to study the motion and structures of large ion clouds in a radio-frequency (RF) trap, a computer simulation of the system that incorporates the effect of thermal excitation of the ions was developed. Results are presented from the simulation for cloud sizes up to 512 ions, emphasizing cloud structures in the low-temperature regime.

Revised prediction of LDEF exposure to trapped protons

NASA Technical Reports Server (NTRS)

Watts, John W.; Armstrong, T. W.; Colborn, B. L.

1993-01-01

The Long Duration Exposure Facility (LDEF) spacecraft flew in a 28.5 deg inclination circular orbit with an altitude in the range from 319.4 to 478.7 km. For this orbital altitude and inclination, two components contribute most of the penetrating charge particle radiation encountered - the galactic cosmic rays and the geomagnetically trapped Van Allen protons. Where shielding is less than 1.0 g/sq cm geomagnetically trapped electrons make a significant contribution. The 'Vette' models together with the associated magnetic field models and the solar conditions were used to obtain the trapped electron and proton omnidirectional fluences reported previously. Results for directional proton spectra using the MSFC anisotropy model for solar minimum and 463 km altitude (representative for the LDEF mission) were also reported. The directional trapped proton flux as a function of mission time is presented considering altitude and solar activity variation during the mission. These additional results represent an extension of previous calculations to provide a more definitive description of the LDEF trapped proton exposure.

Single-ion, transportable optical atomic clocks

NASA Astrophysics Data System (ADS)

Delehaye, Marion; Lacroûte, Clément

2018-03-01

For the past 15 years, tremendous progress within the fields of laser stabilization, optical frequency combs and atom cooling and trapping have allowed the realization of optical atomic clocks with unrivaled performances. These instruments can perform frequency comparisons with fractional uncertainties well below ?, finding applications in fundamental physics tests, relativistic geodesy and time and frequency metrology. Even though most optical clocks are currently laboratory setups, several proposals for using these clocks for field measurements or within an optical clock network have been published, and most of time and frequency metrology institutes have started to develop transportable optical clocks. For the purpose of this special issue, we chose to focus on trapped-ion optical clocks. Even though their short-term fractional frequency stability is impaired by a lower signal-to-noise ratio, they offer a high potential for compactness: trapped ions demand low optical powers and simple loading schemes, and can be trapped in small vacuum chambers. We review recent advances on the clock key components, including ion trap and ultra-stable optical cavity, as well as existing projects and experiments which draw the picture of what future transportable, single-ion optical clocks may resemble.

Ion Storage Tests with the High Performance Antimatter Trap (HiPAT)

NASA Technical Reports Server (NTRS)

Martin, James J.; Lewis, Raymond A.; Chakrabarti, Suman; Pearson, Boise; Schafer, Charles (Technical Monitor)

2002-01-01

The NASA/Marshall Space Flight Centers (NASA/MSFC) Propulsion Research Center (PRC) is evaluating an antiproton storage system, referred to as the High Performance Antiproton Trap (HiPAT). This interest stems from the sheer energy represented by matter/antimatter annihilation process with has an energy density approximately 10 order of magnitude above that of chemical propellants. In other terms, one gram of antiprotons contains the equivalent energy of approximately 23 space shuttle external tanks or ET's (each ET contains roughly 740,000 kgs of fuel and oxidizer). This incredible source of stored energy, if harnessed, would be an enabling technology for deep space mission where both spacecraft weight and propulsion performance are key to satisfying aggressive mission requirements. The HiPAT hardware consists of a 4 Tesla superconductor system, an ultra high vacuum test section (vacuum approaching 10(exp -12) torr), and a high voltage confinement electrode system (up to 20 kvolts operation). The current laboratory layout is illustrated. The HiPAT designed objectives included storage of up to 1 trillion antiprotons with corresponding lifetimes approaching 18 days. To date, testing has centered on the storage of positive hydrogen ions produced in situ by a stream of high-energy electrons that passes through the trapping region. However, due to space charge issues and electron beam compression as it passes through the HiPAT central field, current ion production is limited to less then 50,000 ions. Ion lifetime was determined by counting particle populations at the end of various storage time intervals. Particle detection was accomplished by destructively expelling the ions against a micro-channel plate located just outside the traps magnetic field. The effect of radio frequency (RF) stabilization on the lifetime of trapped particles was also examined. This technique, referred to as a rotating wall, made use of a segmented electrode located near the center of the trap on which various phases of a particular frequency were applied. Various experiments were performed illustrating the ability of an RF drive to both prolong and reduced the lifetimes of various ion species depending on the selected frequency. HiPAT is now being reconfigured for testing with an ion source that will provide both positive and negative hydrogen ions from an external source. This ion system shall provide higher fill capacity (order of million of ions per shot), stacking of multiple shots, and injection schemes typical of a realistic antiproton delivery system.

Binding of manganese(II) to a tertiary stabilized hammerhead ribozyme as studied by electron paramagnetic resonance spectroscopy

PubMed Central

KISSELEVA, NATALIA; KHVOROVA, ANASTASIA; WESTHOF, ERIC; SCHIEMANN, OLAV

2005-01-01

Electron paramagnetic resonance (EPR) spectroscopy is used to study the binding of MnII ions to a tertiary stabilized hammer-head ribozyme (tsHHRz) and to compare it with the binding to the minimal hammerhead ribozyme (mHHRz). Continuous wave EPR measurements show that the tsHHRz possesses a single high-affinity MnII binding site with a KD of ≤10 nM at an NaCl concentration of 0.1 M. This dissociation constant is at least two orders of magnitude smaller than the KD determined previously for the single high-affinity MnII site in the mHHRz. In addition, whereas the high-affinity MnII is displaced from the mHHRz upon binding of the aminoglycoside antibiotic neomycin B, it is not from the tsHHRz. Despite these pronounced differences in binding, a comparison between the electron spin echo envelope modulation and hyperfine sublevel correlation spectra of the minimal and tertiary stabilized HHRz demonstrates that the structure of both binding sites is very similar. This suggests that the MnII is located in both ribozymes between the bases A9 and G10.1 of the sheared G · A tandem base pair, as shown previously and in detail for the mHHRz. Thus, the much stronger MnII binding in the tsHHRz is attributed to the interaction between the two external loops, which locks in the RNA fold, trapping the MnII in the tightly bound conformation, whereas the absence of long-range loop–loop interactions in the mHHRz leads to more dynamical and open conformations, decreasing MnII binding. PMID:15611296

Electron Plasmas Cooled by Cyclotron-Cavity Resonance

DOE PAGES

Povilus, A. P.; DeTal, N. D.; Evans, L. T.; ...

2016-10-21

We observe that high-Q electromagnetic cavity resonances increase the cyclotron cooling rate of pure electron plasmas held in a Penning-Malmberg trap when the electron cyclotron frequency, controlled by tuning the magnetic field, matches the frequency of standing wave modes in the cavity. For certain modes and trapping configurations, this can increase the cooling rate by factors of 10 or more. In this paper, we investigate the variation of the cooling rate and equilibrium plasma temperatures over a wide range of parameters, including the plasma density, plasma position, electron number, and magnetic field.

Trapping of ultracold polar molecules with a thin-wire electrostatic trap.

PubMed

Kleinert, J; Haimberger, C; Zabawa, P J; Bigelow, N P

2007-10-05

We describe the realization of a dc electric-field trap for ultracold polar molecules, the thin-wire electrostatic trap (TWIST). The thin wires that form the electrodes of the TWIST allow us to superimpose the trap onto a magneto-optical trap (MOT). In our experiment, ultracold polar NaCs molecules in their electronic ground state are created in the MOT via photoassociation, achieving a continuous accumulation in the TWIST of molecules in low-field seeking states. Initial measurements show that the TWIST trap lifetime is limited only by the background pressure in the chamber.

Nuclear Spin Locking and Extended Two-Electron Spin Decoherence Time in an InAs Quantum Dot Molecule

NASA Astrophysics Data System (ADS)

Chow, Colin; Ross, Aaron; Steel, Duncan; Sham, L. J.; Bracker, Allan; Gammon, Daniel

2015-03-01

The spin eigenstates for two electrons confined in a self-assembled InAs quantum dot molecule (QDM) consist of the spin singlet state, S, with J = 0 and the triplet states T-, T0 and T+, with J = 1. When a transverse magnetic field (Voigt geometry) is applied, the two-electron system can be initialized to the different states with appropriate laser excitation. Under the excitation of a weak probe laser, non-Lorentzian lineshapes are obtained when the system is initialized to either T- or T+, where T- results in a ``resonance locking'' lineshape while T+ gives a ``resonance avoiding '' lineshape: two different manifestations of hysteresis showing the importance of memory in the system. These observations signify dynamic nuclear spin polarization (DNSP) arising from a feedback mechanism involving hyperfine interaction between lattice nuclei and delocalized electron spins, and Overhauser shift due to nuclear spin polarization. Using pump configurations that generate coherent population trapping, the isolation of the electron spin from the optical excitation shows the stabilization of the nuclear spin ensemble. The dark-state lineshape measures the lengthened electron spin decoherence time, from 1 ns to 1 μs. Our detailed spectra highlight the potential of QDM for realizing a two-qubit gate. This work is supported by NSF, ARO, AFOSR, DARPA, and ONR.

Demonstration of charge breeding in a compact room temperature electron beam ion trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vorobjev, G.; Sokolov, A.; Herfurth, F.

2012-05-15

For the first time, a small room-temperature electron beam ion trap (EBIT), operated with permanent magnets, was successfully used for charge breeding experiments. The relatively low magnetic field of this EBIT does not contribute to the capture of the ions; single-charged ions are only caught by the space charge potential of the electron beam. An over-barrier injection method was used to fill the EBIT's electrostatic trap with externally produced, single-charged potassium ions. Charge states as high as K{sup 19+} were reached after about a 3 s breeding time. The capture and breeding efficiencies up to 0.016(4)% for K{sup 17+} havemore » been measured.« less

Dynamics of submicron aerosol droplets in a robust optical trap formed by multiple Bessel beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thanopulos, Ioannis; Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, Athens 11635; Luckhaus, David

In this paper, we model the three-dimensional escape dynamics of single submicron-sized aerosol droplets in optical multiple Bessel beam traps. Trapping in counter-propagating Bessel beams (CPBBs) is compared with a newly proposed quadruple Bessel beam (QBB) trap, which consists of two perpendicularly arranged CPBB traps. Calculations are performed for perfectly and imperfectly aligned traps. Mie-theory and finite-difference time-domain methods are used to calculate the optical forces. The droplet escape kinetics are obtained from the solution of the Langevin equation using a Verlet algorithm. Provided the traps are perfectly aligned, the calculations indicate very long lifetimes for droplets trapped either inmore » the CPBB or in the QBB trap. However, minor misalignments that are hard to control experimentally already severely diminish the stability of the CPBB trap. By contrast, such minor misalignments hardly affect the extended droplet lifetimes in a QBB trap. The QBB trap is found to be a stable, robust optical trap, which should enable the experimental investigation of submicron droplets with radii down to 100 nm. Optical binding between two droplets and its potential role in preventing coagulation when loading a CPBB trap is briefly addressed.« less

Highly Luminescent Phase-Stable CsPbI3 Perovskite Quantum Dots Achieving Near 100% Absolute Photoluminescence Quantum Yield.

PubMed

Liu, Feng; Zhang, Yaohong; Ding, Chao; Kobayashi, Syuusuke; Izuishi, Takuya; Nakazawa, Naoki; Toyoda, Taro; Ohta, Tsuyoshi; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing

2017-10-24

Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI 3 perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI 2 (TOP-PbI 2 ) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI 3 QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.

Mini ion trap mass spectrometer

DOEpatents

Dietrich, Daniel D.; Keville, Robert F.

1995-01-01

An ion trap which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10.sup.9 and commercial mass spectrometers requiring 10.sup.4 ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products.

Mini ion trap mass spectrometer

DOEpatents

Dietrich, D.D.; Keville, R.F.

1995-09-19

An ion trap is described which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10{sup 9} and commercial mass spectrometers requiring 10{sup 4} ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products. 10 figs.

High-field penning-malmberg trap: confinement properties and use in positron accumulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartley, J.H.

1997-09-01

This dissertation reports on the development of the 60 kG cryogenic positron trap at Lawrence Livermore National Laboratory, and compares the trap`s confinement properties with other nonneutral plasma devices. The device is designed for the accumulation of up to 2{times}10{sup 9} positrons from a linear-accelerator source. This positron plasma could then be used in Bhabha scattering experiments. Initial efforts at time-of-flight accumulation of positrons from the accelerator show rapid ({approximately}100 ms) deconfinement, inconsistent with the long electron lifetimes. Several possible deconfinement mechanisms have been explored, including annihilation on residual gas, injection heating, rf noise from the accelerator, magnet field curvature,more » and stray fields. Detailed studies of electron confinement demonstrate that the empirical scaling law used to design the trap cannot be extrapolated into the parameter regime of this device. Several possible methods for overcoming these limitations are presented.« less

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

NASA Astrophysics Data System (ADS)

Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

2018-05-01

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

Electron-Hole Condensation in Semiconductors: Electrons and holes condense into freely moving liquid metallic droplets, a plasma phase with novel properties.

PubMed

Jeffries, C D

1975-09-19

In Ge and Si, and also in Ge-Si alloys (74), there is extensive evidence for the stable binding of electrons and holes into a cold plasma of constant density, which undergoes a phase separation. Liquid metallic drops 1 to 300 microm in size are formed, with lifetimes ranging from 0.1 to 600 microsec. For Ge a surprising amount is known: the phase diagram, the surface energy, the work function, the decay kinetics. Much less is known for Si. There is good agreement between theoretical and experimental values of the liquid density, the critical density, the critical temperature, and the binding energy. The stability of the liquid phase is strikingly dependent on band structure. The multivalley structure and mass anisotropy of Si, Ge, and Ge-Si, together with their indirect band gap, are no doubt responsible for the observed stability in these crystals. In the similar semiconductor gallium phosphide, drops have not yet been observed, most likely because the high impurity content traps the excitons. In gallium arsenide the existence of drops is controversial (75). Undoubtedly drops will be found to exist in other semiconductors, perhaps at even higher temperatures. This is an exciting field for the experimentalist; new phenomena are being rapidly discovered, usually before they are predicted. For the theorist, the electron-hole drop is of high intrinsic interest. It represents the first example of a quantum liquid of constant density in a periodic crystal lattice. A number of challenging experimental and theoretical problems remain.

Quantum Error Correction with a Globally-Coupled Array of Neutral Atom Qubits

DTIC Science & Technology

2013-02-01

magneto - optical trap ) located at the center of the science cell. Fluorescence...Bottle beam trap GBA Gaussian beam array EMCCD electron multiplying charge coupled device microsec. microsecond MOT Magneto - optical trap QEC quantum error correction qubit quantum bit ...developed and implemented an array of neutral atom qubits in optical traps for studies of quantum error correction. At the end of the three year

"Inner electron" radiation belt: problems of model creation

NASA Astrophysics Data System (ADS)

Temnyi, V.

The contents of intensive fluxes of trapped electrons J_e with energies E_e>40 keV in center of the inner terrestrial radiation belt is remains uncertain in model Vette AE-8, 1991. It is explained by methodical difficulties of discrete measurements of electrons by narrow-angle spectrometers with background from omnidirectional penetrating protons with energies E_p>40 MeV and electrons with E_e>1 MeV after STARFISH burst. The results of integral measurements of trapped electrons by 2 groups: Krassovsky V.I. on III Soviet satellite (May 1958) and J. Van Allen on EXPLORER-IV (July-August 1958) and on INJUN-1 (1961) heave given a performances concerning electron energy fluxes I_e(E_e>20 keV) ˜ (20-100) erg cm-2 c-1 into inner radiation belt. Improved integral measurements of electrons by Krassovsky group on satellites KOSMOS-3,-5 and ELECTRON-1,-3 (1962-1964) allow to determine the distributions of their intensities in the whole inner belt. They can add the central part of inner belt of AE-8 model (see report Bolunova et al., COSPAR-1965, publ. in SPACE RESEARCH VI, 1967, p. 649-661). From these data a maximum of trapped electrons J_e(E_e>40 keV)=2\\cdot10^9 cm-2 c-1 is placed on L=1,6, B/B_0=1. Intensities up to 2\\cdot10^7 cm-2 c-1 are determined only by coordinates (L, B). For smaller intensities become essential dependence from longitude along a drift shell. So, in the center of the inner radiation belt the energy fluxes I_e(E_e>40 keV) reach 500 erg cm-2 c-1 and density n_e=0,2 cm-3 while for trapped protons I_p(E_p>40 MeV) is less than 3 erg cm-2 c-1 and n_p< 5\\cdot10-6 cm-3. It forces to search a more powerful sources trapped electron than beta-decay of neutrons albedo of cosmic rays.

Charge transfer fluorescence and 34 nm exciton diffusion length in polymers with electron acceptor end traps

DOE PAGES

Zaikowski, Lori; Mauro, Gina; Bird, Matthew; ...

2014-12-22

Photoexcitation of conjugated poly-2,7-(9,9-dihexylfluorene) polyfluorenes with naphthylimide (NI) and anthraquinone (AQ) electron-acceptor end traps produces excitons that form charge transfer states at the end traps. Intramolecular singlet exciton transport to end traps was examined by steady state fluorescence for polyfluorenes of 17 to 127 repeat units in chloroform, dimethylformamide (DMF), tetrahydrofuran (THF), and p-xylene. End traps capture excitons and form charge transfer (CT) states at all polymer lengths and in all solvents. The CT nature of the end-trapped states is confirmed by their fluorescence spectra, solvent and trap group dependence and DFT descriptions. Quantum yields of CT fluorescence are asmore » large as 46%. This strong CT emission is understood in terms of intensity borrowing. Energies of the CT states from onsets of the fluorescence spectra give the depths of the traps which vary with solvent polarity. For NI end traps the trap depths are 0.06 (p-xylene), 0.13 (THF) and 0.19 eV (CHCl 3). For AQ, CT fluorescence could be observed only in p-xylene where the trap depth is 0.27 eV. Quantum yields, emission energies, charge transfer energies, solvent reorganization and vibrational energies were calculated. Fluorescence measurements on chains >100 repeat units indicate that end traps capture ~50% of the excitons, and that the exciton diffusion length L D =34 nm, which is much larger than diffusion lengths reported in polymer films or than previously known for diffusion along isolated chains. As a result, the efficiency of exciton capture depends on chain length, but not on trap depth, solvent polarity or which trap group is present.« less

Effect of the sample annealing temperature and sample crystallographic orientation on the charge kinetics of MgO single crystals subjected to keV electron irradiation.

PubMed

Boughariou, A; Damamme, G; Kallel, A

2015-04-01

This paper focuses on the effect of sample annealing temperature and crystallographic orientation on the secondary electron yield of MgO during charging by a defocused electron beam irradiation. The experimental results show that there are two regimes during the charging process that are better identified by plotting the logarithm of the secondary electron emission yield, lnσ, as function of the total trapped charge in the material QT. The impact of the annealing temperature and crystallographic orientation on the evolution of lnσ is presented here. The slope of the asymptotic regime of the curve lnσ as function of QT, expressed in cm(2) per trapped charge, is probably linked to the elementary cross section of electron-hole recombination, σhole, which controls the trapping evolution in the reach of the stationary flow regime. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

A molecular dynamics simulation study on trapping ions in a nanoscale Paul trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiongce; Krstic, Predrag S

2008-01-01

We found by molecular dynamics simulations that a low energy ion can be trapped effectively in a nanoscale Paul trap in both vacuum and in aqueous environment when appropriate AC/DC electric fields are applied to the system. Using the negatively charged chlorine ion as an example, we show that the trapped ion oscillates around the center of the nanotrap with the amplitude dependent on the parameters of the system and applied voltage. Successful trapping of the ion within nanoseconds requires electric bias of GHz frequency, in the range of hundreds of mV. The oscillations are damped in the aqueous environment,more » but polarization of the water molecules requires application of the higher voltage biases to reach the improved stability of the trapping. Application of a supplemental DC driving field along the trap axis can effectively drive the ion off the trap center and out of the trap, opening a possibility of studying DNA and other biological molecules using embedded probes while achieving a full control of their translocation and localization in the trap.« less

ELECTRON ACCELERATION BY CASCADING RECONNECTION IN THE SOLAR CORONA. II. RESISTIVE ELECTRIC FIELD EFFECTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, X.; Gan, W.; Liu, S.

We investigate electron acceleration by electric fields induced by cascading reconnections in current sheets trailing coronal mass ejections via a test particle approach in the framework of the guiding-center approximation. Although the resistive electric field is much weaker than the inductive electric field, the electron acceleration is still dominated by the former. Anomalous resistivity η is switched on only in regions where the current carrier’s drift velocity is large enough. As a consequence, electron acceleration is very sensitive to the spatial distribution of the resistive electric fields, and electrons accelerated in different segments of the current sheet have different characteristics.more » Due to the geometry of the 2.5-dimensional electromagnetic fields and strong resistive electric field accelerations, accelerated high-energy electrons can be trapped in the corona, precipitating into the chromosphere or escaping into interplanetary space. The trapped and precipitating electrons can reach a few MeV within 1 s and have a very hard energy distribution. Spatial structure of the acceleration sites may also introduce breaks in the electron energy distribution. Most of the interplanetary electrons reach hundreds of keV with a softer distribution. To compare with observations of solar flares and electrons in solar energetic particle events, we derive hard X-ray spectra produced by the trapped and precipitating electrons, fluxes of the precipitating and interplanetary electrons, and electron spatial distributions.« less

A novel chlorophyll solar cell

NASA Astrophysics Data System (ADS)

Ludlow, J. C.

The photosynthetic process is reviewed in order to produce a design for a chlorophyll solar cell. In a leaf, antenna chlorophyll absorbs light energy and conducts it to an energy trap composed of a protein and two chlorophyll molecules, which perform the oxidation-reduction chemistry. The redox potential of the trap changes from 0.4 to -0.6 V, which is sufficient to reduce nearby molecules with redox potentials in that range. The reduction occurs by transfer of an electron, and a chlorophyll solar cell would direct the transferred electron to a current carrier. Chlorophyll antenna and traps are placed on a metallic support immersed in an electron acceptor solution, and resulting electrons from exposure to light are gathered by a metallic current collector. Spinach chlorophyll extracted, purified, and applied in a cell featuring a Pt collector and an octane water emulsion resulted in intensity independent voltages.

Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

PubMed

Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

2015-05-26

Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

Photoinduced reactions of dibenzoyl peroxide as studied by EPR and spin-trapping

NASA Astrophysics Data System (ADS)

Rosenthal, Ionel; Mossoba, Magdi M.; Riesz, Peter

The photochemical reactions of dibenzoyl peroxide with some organic compounds were found by EPR and spin-trapping to generate free radicals in dimethyl sulfoxide solutions at room temperature. Two reaction mechanisms occur which determine the structures of the radicals generated. The first involves a one-electron oxidation and the second a hydrogen atom transfer. The prevailing mechanism is primarily dependent on the structure of the substrate. With carboxylic acids the one-electron oxidation occurs exclusively, leading to the loss of the carboxyl group and to formation of the alkyl radical. For alcohols both alkoxy radicals and hydrogen-abstraction α-carbon radicals were spin trapped. The alkoxy radicals were generated by the electron transfer mechanism. Finally pyrimidine bases such as thymine and cytosine yielded C(5)-centered radicals which could also be explained by an electron transfer mechanism. These observations are of interest because of the recently observed skin tumor-promoting activity of dibenzoyl peroxide.

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemke, Henrik T.; Kjær, Kasper S.; Hartsock, Robert

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born–Oppenheimer approximation, into the light-induced spin-state trapping dynamics of the prototypical [Fe(bpy)3]2+ compound by time-resolved X-ray absorption spectroscopy at sub-30-femtosecond resolution and high signal-to-noise ratio. The electronic decay from the initial optically excited electronic state towards the high spin state is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersionmore » of the wave packet along the reaction coordinate reveals details of intramolecular vibronic coupling before a slower vibrational energy dissipation to the solution environment. These findings illustrate how modern time-resolved X-ray absorption spectroscopy can provide key information to unravel dynamic details of photo-functional molecules.« less

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

DOE PAGES

Lemke, Henrik T.; Kjær, Kasper S.; Hartsock, Robert; ...

2017-05-24

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born–Oppenheimer approximation, into the light-induced spin-state trapping dynamics of the prototypical [Fe(bpy)3]2+ compound by time-resolved X-ray absorption spectroscopy at sub-30-femtosecond resolution and high signal-to-noise ratio. The electronic decay from the initial optically excited electronic state towards the high spin state is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersionmore » of the wave packet along the reaction coordinate reveals details of intramolecular vibronic coupling before a slower vibrational energy dissipation to the solution environment. These findings illustrate how modern time-resolved X-ray absorption spectroscopy can provide key information to unravel dynamic details of photo-functional molecules.« less

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

NASA Astrophysics Data System (ADS)

Lemke, Henrik T.; Kjær, Kasper S.; Hartsock, Robert; van Driel, Tim B.; Chollet, Matthieu; Glownia, James M.; Song, Sanghoon; Zhu, Diling; Pace, Elisabetta; Matar, Samir F.; Nielsen, Martin M.; Benfatto, Maurizio; Gaffney, Kelly J.; Collet, Eric; Cammarata, Marco

2017-05-01

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born-Oppenheimer approximation, into the light-induced spin-state trapping dynamics of the prototypical [Fe(bpy)3]2+ compound by time-resolved X-ray absorption spectroscopy at sub-30-femtosecond resolution and high signal-to-noise ratio. The electronic decay from the initial optically excited electronic state towards the high spin state is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersion of the wave packet along the reaction coordinate reveals details of intramolecular vibronic coupling before a slower vibrational energy dissipation to the solution environment. These findings illustrate how modern time-resolved X-ray absorption spectroscopy can provide key information to unravel dynamic details of photo-functional molecules.

Optical and magnetic measurements of gyroscopically stabilized graphene nanoplatelets levitated in an ion trap

NASA Astrophysics Data System (ADS)

Nagornykh, Pavel; Coppock, Joyce E.; Murphy, Jacob P. J.; Kane, B. E.

2017-07-01

Using optical measurements, we demonstrate that the rotation of micron-scale graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum can be frequency-locked to an applied radiofrequency electric field Erf. Over time, frequency-locking stabilizes the nanoplatelet so that its axis of rotation is normal to the nanoplatelet and perpendicular to Erf. We observe that residual slow dynamics of the direction of the axis of rotation in the plane normal to Erf is determined by an applied magnetic field. We present a simple model that accurately describes our observations. From our data and model, we can infer both a diamagnetic polarizability and a magnetic moment proportional to the frequency of rotation, which we compare to theoretical values. Our results establish that trapping technologies have applications for materials measurements at the nanoscale.

System for adding sulfur to a fuel cell stack system for improved fuel cell stability

DOEpatents

Mukerjee, Subhasish [Pittsford, NY; Haltiner, Jr., Karl J; Weissman, Jeffrey G [West Henrietta, NY

2012-03-06

A system for adding sulfur to a fuel cell stack, having a reformer adapted to reform a hydrocarbon fuel stream containing sulfur contaminants, thereby providing a reformate stream having sulfur; a sulfur trap fluidly coupled downstream of the reformer for removing sulfur from the reformate stream, thereby providing a desulfurized reformate stream; and a metering device in fluid communication with the reformate stream upstream of the sulfur trap and with the desulfurized reformate stream downstream of the sulfur trap. The metering device is adapted to bypass a portion of the reformate stream to mix with the desulfurized reformate stream, thereby producing a conditioned reformate stream having a predetermined sulfur concentration that gives an acceptable balance of minimal drop in initial power with the desired maximum stability of operation over prolonged periods for the fuel cell stack.

White organic light-emitting devices with high color purity and stability

NASA Astrophysics Data System (ADS)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-04-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

Computer simulation on the collision-sticking dynamics of two colloidal particles in an optical trap.

PubMed

Xu, Shenghua; Sun, Zhiwei

2007-04-14

Collisions of a particle pair induced by optical tweezers have been employed to study colloidal stability. In order to deepen insights regarding the collision-sticking dynamics of a particle pair in the optical trap that were observed in experimental approaches at the particle level, the authors carry out a Brownian dynamics simulation. In the simulation, various contributing factors, including the Derjaguin-Landau-Verwey-Overbeek interaction of particles, hydrodynamic interactions, optical trapping forces on the two particles, and the Brownian motion, were all taken into account. The simulation reproduces the tendencies of the accumulated sticking probability during the trapping duration for the trapped particle pair described in our previous study and provides an explanation for why the two entangled particles in the trap experience two different statuses.

METHOD AND APPARATUS FOR INJECTING AND TRAPPING ELECTRONS IN A MAGNETIC FIELD

DOEpatents

Christofilos, N.C.

1962-05-29

An apparatus is designed for the manipulation of electrons in an exially symmetric magnetic field region and may be employed to trap electrons in such a field by directing an electron beam into a gradientially intensified field region therein to form an annular electron moving axially in the field and along a decreasing field gradient. Dissipative loop circuits such as resistive loops are disposed along at least the decreasing field gradient so as to be inductively coupled to the electron bunch so as to extract energy of the electron bunch and provide a braking force effective to reduce the velocity of the bunch. Accordingly, the electron bunch upon entering a lower intensity magnetic field region is retained therein since the electrons no longer possess sufficient energy to escape. (AEC)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinert, J.; Haimberger, C.; Zabawa, P. J.

We describe the realization of a dc electric-field trap for ultracold polar molecules, the thin-wire electrostatic trap (TWIST). The thin wires that form the electrodes of the TWIST allow us to superimpose the trap onto a magneto-optical trap (MOT). In our experiment, ultracold polar NaCs molecules in their electronic ground state are created in the MOT via photoassociation, achieving a continuous accumulation in the TWIST of molecules in low-field seeking states. Initial measurements show that the TWIST trap lifetime is limited only by the background pressure in the chamber.

Electronic excitations and self-trapping of electrons and holes in CaSO4

NASA Astrophysics Data System (ADS)

Kudryavtseva, I.; Klopov, M.; Lushchik, A.; Lushchik, Ch; Maaroos, A.; Pishtshev, A.

2014-04-01

A first-principles study of the electronic properties of a CaSO4 anhydrite structural phase has been performed. A theoretical estimation for the fundamental band gap (p → s transitions) is Eg = 9.6 eV and a proper threshold for p → d transitions is Epd = 10.8 eV. These values agree with the data obtained for a set of CaSO4 doped with Gd3+, Dy3+, Tm3+ and Tb3+ ions using the methods of low-temperature highly sensitive luminescence and thermoactivation spectroscopy. The results are consistent with theoretical predictions of a possible low-temperature self-trapping of oxygen p-holes. The hopping diffusion of hole polarons starts above ˜40 K and is accompanied by a ˜50-60 K peak of thermally stimulated luminescence of RE3+ ions caused due to the recombination of hole polarons with the electrons localized at RE3+. There is no direct evidence of the self-trapping of heavy d-electrons, however, one can argue that their motion rather differs from that of conduction s-electrons.

Analytical model of secondary electron emission yield in electron beam irradiated insulators.

PubMed

Ghorbel, N; Kallel, A; Damamme, G

2018-06-12

The study of secondary electron emission (SEE) yield as a function of the kinetic energy of the incident primary electron beam and its evolution with charge accumulation inside insulators is a source of valuable information (even though an indirect one) on charge transport and trapping phenomena. We will show that this evolution is essentially due, in plane geometry conditions (achieved using a defocused electron beam), to the electric field effect (due to the accumulation of trapped charges in the bulk) in the escape zone of secondary electrons and not to modifications of trapping cross sections, which only have side effects. We propose an analytical model including the main basic phenomena underlying the space charge dynamics. It will be observed that such a model makes it possible to reproduce both qualitatively and quantitatively the measurement of SEE evolution as well as to provide helpful indications concerning charge transport (more precisely, the ratios between the mobility and diffusion coefficient with the thermal velocity of the charge carrier). Copyright © 2018 Elsevier Ltd. All rights reserved.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Charging and heat collection by a positively charged dust grain in a plasma.

PubMed

Delzanno, Gian Luca; Tang, Xian-Zhu

2014-07-18

Dust particulates immersed in a quasineutral plasma can emit electrons in several important applications. Once electron emission becomes strong enough, the dust enters the positively charged regime where the conventional orbital-motion-limited (OML) theory can break down due to potential-well effects on trapped electrons. A minimal modification of the trapped-passing boundary approximation in the so-called OML(+) approach is shown to accurately predict the dust charge and heat collection flux for a wide range of dust size and temperature.

A density functional theory study of the role of functionalized graphene particles as effective additives in power cable insulation

PubMed Central

Song, Shuwei; Zhao, Hong; Zheng, Xiaonan; Zhang, Hui; Wang, Ying; Han, Baozhong

2018-01-01

The role of a series of functionalized graphene additives in power cable insulation in suppressing the growth of electrical treeing and preventing the degradation of the polymer matrix has been investigated by density functional theory calculations. Bader charge analysis indicates that pristine, doped or defect graphene could effectively capture hot electrons to block their attack on cross-linked polyethylene (XLPE) because of the π–π conjugated unsaturated structures. Further exploration of the electronic properties in the interfacial region between the additives and XLPE shows that N-doped single-vacancy graphene, graphene oxide and B-, N-, Si- or P-doped graphene oxide have relatively strong physical interaction with XLPE to restrict its mobility and rather weak chemical activity to prevent the cleavage of the C–H or C–C bond, suggesting that they are all potential candidates as effective additives. The understanding of the features of functionalized graphene additives in trapping electrons and interfacial interaction will assist in the screening of promising additives as voltage stabilizers in power cables. PMID:29515821

A density functional theory study of the role of functionalized graphene particles as effective additives in power cable insulation.

PubMed

Song, Shuwei; Zhao, Hong; Zheng, Xiaonan; Zhang, Hui; Liu, Yang; Wang, Ying; Han, Baozhong

2018-02-01

The role of a series of functionalized graphene additives in power cable insulation in suppressing the growth of electrical treeing and preventing the degradation of the polymer matrix has been investigated by density functional theory calculations. Bader charge analysis indicates that pristine, doped or defect graphene could effectively capture hot electrons to block their attack on cross-linked polyethylene (XLPE) because of the π-π conjugated unsaturated structures. Further exploration of the electronic properties in the interfacial region between the additives and XLPE shows that N-doped single-vacancy graphene, graphene oxide and B-, N-, Si- or P-doped graphene oxide have relatively strong physical interaction with XLPE to restrict its mobility and rather weak chemical activity to prevent the cleavage of the C-H or C-C bond, suggesting that they are all potential candidates as effective additives. The understanding of the features of functionalized graphene additives in trapping electrons and interfacial interaction will assist in the screening of promising additives as voltage stabilizers in power cables.

Radiation effects in x-irradiated hydroxy compounds

NASA Astrophysics Data System (ADS)

Budzinski, Edwin E.; Potter, William R.; Box, Harold C.

1980-01-01

Radiation effects are compared in single crystals of xylitol, sorbitol, and dulcitol x-irradiated at 4.2 °K. In xylitol and dulcitol, but not in sorbitol, a primary oxidation product is identified as an alkoxy radical. ENDOR measurements detected three proton hyperfine couplings associated with the alkoxy ESR absorption, one of which is attributed to a proton three bond lengths removed from the seat of unpaired spin density. Intermolecular trapping of electrons is observed in all three crystals. ENDOR measurements were made of the hyperfine couplings between the trapped electron and the hydroxy protons forming the trap.

Evidence for weakly bound electrons in non-irradiated alkane crystals: The electrons as a probe of structural differences in crystals.

PubMed

Pietrow, M; Gagoś, M; Misiak, L E; Kornarzyński, K; Szurkowski, J; Rochowski, P; Grzegorczyk, M

2015-02-14

It is generally assumed that weakly bound (trapped) electrons in organic solids come only from radiolytical (or photochemical) processes like ionization caused by an excited positron entering the sample. This paper presents evidence for the presence of these electrons in non-irradiated samples of docosane. This can be due to the triboelectrification process. We argue that these electrons can be located (trapped) either in interlamellar gaps or in spaces made by non-planar conformers. Electrons from the former ones are bound more weakly than electrons from the latter ones. The origin of Vis absorption for the samples is explained. These spectra can be used as a probe indicating differences in the solid structures of hydrocarbons.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

NASA Astrophysics Data System (ADS)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Stable confinement of electron plasma and initial results on positron injection in RT-1

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Yano, Y.; Kasaoka, N.; Sakamoto, W.; Nogami, T.

2013-03-01

The Ring Trap 1 (RT-1) device is a dipole field configuration generated by a levitated superconducting magnet. It offers very interesting opportunities for research on the fundamental properties on non-neutral plasmas, such as self-organization of charged particles in the strongly positive and negative charged particles on magnetic surfaces. When strong positron sources will be available in the future, the dipole field configuration will be potentially applicable to the formation of an electron-positron plasma. We have realized stable, long trap of toroidal pure electron plasma in RT-1; Magnetic levitation of the superconducting magnet resulted in more than 300s of confinement for electron plasma of ˜ 1011 m-3. Aiming for the confinement of positrons as a next step, we started a positron injection experiment. For the formation of positron plasma in the closed magnetic surfaces, one of the key issues to be solved is the efficient injection method of positron across closed magnetic surfaces. In contrast to linear configurations, toroidal configurations have the advantage that they are capable of trapping high energy positrons in the dipole field configuration and consider the possibility of direct trapping of positrons emitted from a 22Na source.

Identification of microscopic hole-trapping mechanisms in nitride semiconductors

DOE PAGES

John L. Lyons; Krishnaswamy, Karthik; Luke Gordon; ...

2015-12-17

Hole trapping has been observed in nitride heterostructure devices, where the Fermi level is in the vicinity of the valence-band maximum. Using hybrid density functional calculations, we examine microscopic mechanisms for hole trapping in GaN and AlN. In a defect-free material, hole trapping does not spontaneously occur, but trapping can occur in the vicinity of impurities, such as C-a common unintentional impurity in nitrides. As a result, using Schrodinger-Poisson simulations, we assess the effects of C-derived hole traps on N-face high-electron mobility transistors, which we find to be more detrimental than the previously proposed interface traps.

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Elfimchev, S.; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-01

In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360-520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very effective at elevated temperatures.

Switching Oxide Traps

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.

2003-01-01

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Phase-breaking effect on polaron transport in organic conjugated polymers

DOE PAGES

Meng, Ruixuan; Yin, Sun; Zheng, Yujun; ...

2017-06-15

Despite intense investigations and many accepted viewpoints on theory and experiment, the coherent and incoherent carrier transport in organic semiconductors remains an unsettled topic due to the strong electron-phonon coupling. Based on the tight-binding Su-Schrieffer-Heeger (SSH) model combined with a non-adiabatic dynamics method, we study the effect of phase-breaking on polaron transport by introducing a group of phase-breaking factors into π-electron wave-functions in organic conjugated polymers. Two approaches are applied: the modification of the transfer integral and the phase-breaking addition to the wave-function. Within the former, it is found that a single site phase-breaking can trap a polaron. However, withmore » a larger regular phase-breaking a polaron becomes more delocalized and lighter. Additionally, a group of disordered phase-breaking factors can make the polaron disperse in transport process. Within the latter approach, we show that the phase-breaking can render the delocalized state in valence band discrete and the state in the gap more localized. Consequently, the phase-breaking frequency and intensity can reduce the stability of a polaron. Furthermore, the phase-breaking in organic systems is the main factor that degrades the coherent transport and destroys the carrier stability.« less

Role of Adsorbed Water on Charge Carrier Dynamics in Photoexcited TiO2

PubMed Central

2017-01-01

Overall photocatalytic water splitting is one of the most sought after processes for sustainable solar-to-chemical energy conversion. The efficiency of this process strongly depends on charge carrier recombination and interaction with surface adsorbates at different time scales. Here, we investigated how hydration of TiO2 P25 affects dynamics of photogenerated electrons at the millisecond to minute time scale characteristic for chemical reactions. We used rapid scan diffuse-reflectance infrared Fourier transform spectroscopy (DRIFTS). The decay of photogenerated electron absorption was substantially slower in the presence of associated water. For hydrated samples, the charge carrier recombination rates followed an Arrhenius-type behavior in the temperature range of 273–423 K; these became temperature-independent when the material was dehydrated at temperatures above 423 K or cooled below 273 K. A DFT+U analysis revealed that hydrogen bonding with adsorbed water stabilizes surface-trapped holes at anatase TiO2(101) facet and lowers the barriers for hole migration. Hence, hole mobility should be higher in the hydrated material than in the dehydrated system. This demonstrates that adsorbed associated water can efficiently stabilize photogenerated charge carriers in nanocrystalline TiO2 and suppress their recombination at the time scale up to minutes. PMID:28413570

Phase-breaking effect on polaron transport in organic conjugated polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Ruixuan; Yin, Sun; Zheng, Yujun

Despite intense investigations and many accepted viewpoints on theory and experiment, the coherent and incoherent carrier transport in organic semiconductors remains an unsettled topic due to the strong electron-phonon coupling. Based on the tight-binding Su-Schrieffer-Heeger (SSH) model combined with a non-adiabatic dynamics method, we study the effect of phase-breaking on polaron transport by introducing a group of phase-breaking factors into π-electron wave-functions in organic conjugated polymers. Two approaches are applied: the modification of the transfer integral and the phase-breaking addition to the wave-function. Within the former, it is found that a single site phase-breaking can trap a polaron. However, withmore » a larger regular phase-breaking a polaron becomes more delocalized and lighter. Additionally, a group of disordered phase-breaking factors can make the polaron disperse in transport process. Within the latter approach, we show that the phase-breaking can render the delocalized state in valence band discrete and the state in the gap more localized. Consequently, the phase-breaking frequency and intensity can reduce the stability of a polaron. Furthermore, the phase-breaking in organic systems is the main factor that degrades the coherent transport and destroys the carrier stability.« less

Pedestal evolution physics in low triangularity JET tokamak discharges with ITER-like wall

NASA Astrophysics Data System (ADS)

Bowman, C.; Dickinson, D.; Horvath, L.; Lunniss, A. E.; Wilson, H. R.; Cziegler, I.; Frassinetti, L.; Gibson, K.; Kirk, A.; Lipschultz, B.; Maggi, C. F.; Roach, C. M.; Saarelma, S.; Snyder, P. B.; Thornton, A.; Wynn, A.; Contributors, JET

2018-01-01

The pressure gradient of the high confinement pedestal region at the edge of tokamak plasmas rapidly collapses during plasma eruptions called edge localised modes (ELMs), and then re-builds over a longer time scale before the next ELM. The physics that controls the evolution of the JET pedestal between ELMs is analysed for 1.4 MA, 1.7 T, low triangularity, δ  =  0.2, discharges with the ITER-like wall, finding that the pressure gradient typically tracks the ideal magneto-hydrodynamic ballooning limit, consistent with a role for the kinetic ballooning mode. Furthermore, the pedestal width is often influenced by the region of plasma that has second stability access to the ballooning mode, which can explain its sometimes complex evolution between ELMs. A local gyrokinetic analysis of a second stable flux surface reveals stability to kinetic ballooning modes; global effects are expected to provide a destabilising mechanism and need to be retained in such second stable situations. As well as an electron-scale electron temperature gradient mode, ion scale instabilities associated with this flux surface include an electro-magnetic trapped electron branch and two electrostatic branches propagating in the ion direction, one with high radial wavenumber. In these second stability situations, the ELM is triggered by a peeling-ballooning mode; otherwise the pedestal is somewhat below the peeling-ballooning mode marginal stability boundary at ELM onset. In this latter situation, there is evidence that higher frequency ELMs are paced by an oscillation in the plasma, causing a crash in the pedestal before the peeling-ballooning boundary is reached. A model is proposed in which the oscillation is associated with hot plasma filaments that are pushed out towards the plasma edge by a ballooning mode, draining their free energy into the cooler plasma there, and then relaxing back to repeat the process. The results suggest that avoiding the oscillation and maximising the region of plasma that has second stability access will lead to the highest pedestal heights and, therefore, best confinement—a key result for optimising the fusion performance of JET and future tokamaks, such as ITER.

Excitation transfer and trapping kinetics in plant photosystem I probed by two-dimensional electronic spectroscopy.

PubMed

Akhtar, Parveen; Zhang, Cheng; Liu, Zhengtang; Tan, Howe-Siang; Lambrev, Petar H

2018-03-01

Photosystem I is a robust and highly efficient biological solar engine. Its capacity to utilize virtually every absorbed photon's energy in a photochemical reaction generates great interest in the kinetics and mechanisms of excitation energy transfer and charge separation. In this work, we have employed room-temperature coherent two-dimensional electronic spectroscopy and time-resolved fluorescence spectroscopy to follow exciton equilibration and excitation trapping in intact Photosystem I complexes as well as core complexes isolated from Pisum sativum. We performed two-dimensional electronic spectroscopy measurements with low excitation pulse energies to record excited-state kinetics free from singlet-singlet annihilation. Global lifetime analysis resolved energy transfer and trapping lifetimes closely matches the time-correlated single-photon counting data. Exciton energy equilibration in the core antenna occurred on a timescale of 0.5 ps. We further observed spectral equilibration component in the core complex with a 3-4 ps lifetime between the bulk Chl states and a state absorbing at 700 nm. Trapping in the core complex occurred with a 20 ps lifetime, which in the supercomplex split into two lifetimes, 16 ps and 67-75 ps. The experimental data could be modelled with two alternative models resulting in equally good fits-a transfer-to-trap-limited model and a trap-limited model. However, the former model is only possible if the 3-4 ps component is ascribed to equilibration with a "red" core antenna pool absorbing at 700 nm. Conversely, if these low-energy states are identified with the P 700 reaction centre, the transfer-to-trap-model is ruled out in favour of a trap-limited model.

Towards lightweight and flexible high performance nanocrystalline silicon solar cells through light trapping and transport layers

NASA Astrophysics Data System (ADS)

Gray, Zachary R.

This thesis investigates ways to enhance the efficiency of thin film solar cells through the application of both novel nano-element array light trapping architectures and nickel oxide hole transport/electron blocking layers. Experimental results independently demonstrate a 22% enhancement in short circuit current density (JSC) resulting from a nano-element array light trapping architecture and a ˜23% enhancement in fill factor (FF) and ˜16% enhancement in open circuit voltage (VOC) resulting from a nickel oxide transport layer. In each case, the overall efficiency of the device employing the light trapping or transport layer was superior to that of the corresponding control device. Since the efficiency of a solar cell scales with the product of JSC, FF, and VOC, it follows that the results of this thesis suggest high performance thin film solar cells can be realized in the event light trapping architectures and transport layers can be simultaneously optimized. The realizations of these performance enhancements stem from extensive process optimization for numerous light trapping and transport layer fabrication approaches. These approaches were guided by numerical modeling techniques which will also be discussed. Key developments in this thesis include (1) the fabrication of nano-element topographies conducive to light trapping using various fabrication approaches, (2) the deposition of defect free nc-Si:H onto structured topographies by switching from SiH4 to SiF 4 PECVD gas chemistry, and (3) the development of the atomic layer deposition (ALD) growth conditions for NiO. Keywords: light trapping, nano-element array, hole transport layer, electron blocking layer, nickel oxide, nanocrystalline silicon, aluminum doped zinc oxide, atomic layer deposition, plasma enhanced chemical vapor deposition, electron beam lithography, ANSYS HFSS.

Effect of dust charging and trapped electrons on nonlinear solitary structures in an inhomogeneous magnetized plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Ravinder; Malik, Hitendra K.; Singh, Khushvant

2012-01-15

Main concerns of the present article are to investigate the effects of dust charging and trapped electrons on the solitary structures evolved in an inhomogeneous magnetized plasma. Such a plasma is found to support two types of waves, namely, fast wave and slow wave. Slow wave propagates in the plasma only when the wave propagation angle {theta} satisfies the condition {theta}{>=}tan{sup -1}{l_brace}({radical}((1+2{sigma})-[(n{sub dlh}({gamma}{sub 1}-1))/(1+n{sub dlh}{gamma}{sub 1})])-v{sub 0}/u{sub 0}){r_brace}, where v{sub 0}(u{sub 0}) is the z- (x-) component of ion drift velocity, {sigma} = T{sub i}/T{sub eff}, n{sub dlh} = n{sub d0}/(n{sub el0} + n{sub eh0}), and {gamma}{sub 1}=-(1/{Phi}{sub i0})[(1-{Phi}{sub i0}/1+{sigma}(1-{Phi}{submore » i0}))] together with T{sub i} as ion temperature, n{sub el0}(n{sub eh0}) as the density of trapped (isothermal) electrons, {Phi}{sub i0} as the dust grain (density n{sub d0}) surface potential relative to zero plasma potential, and T{sub eff}=(n{sub elo}+n{sub eho})T{sub el}T{sub eh}/(n{sub elo}T{sub eh}+n{sub eho}T{sub el}), where T{sub el}(T{sub eh}) is the temperature of trapped (isothermal) electrons. Both the waves evolve in the form of density hill type structures in the plasma, confirming that these solitary structures are compressive in nature. These structures are found to attain higher amplitude when the charge on the dust grains is fluctuated (in comparison with the case of fixed charge) and also when the dust grains and trapped electrons are more in number; the same is the case with higher temperature of ions and electrons. Slow solitary structures show weak dependence on the dust concentration. Both types of structures are found to become narrower under the application of stronger magnetic field. With regard to the charging of dust grains, it is observed that the charge gets reduced for the higher trapped electron density and temperature of ions and electrons, and dust charging shows weak dependence on the ion temperature.« less

Ball-grid array architecture for microfabricated ion traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guise, Nicholas D., E-mail: nicholas.guise@gtri.gatech.edu; Fallek, Spencer D.; Stevens, Kelly E.

2015-05-07

State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensivemore » surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with {sup 40}Ca{sup +} ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with {sup 171}Yb{sup +} ions in a second BGA trap.« less

Benzalkonium Chloride Provides Remarkable Stability to Liquid Protein Lures for Trapping Anastrepha obliqua (Diptera: Tephritidae).

PubMed

Lasa, R; Williams, T

2017-12-05

Hydrolyzed protein lures are widely used to monitor fruit fly pests but are rapidly degraded by microbial activity and must be replaced frequently. To improve the stability of lures, the quaternary ammonium biocide, benzalkonium chloride (BC), was evaluated in mixtures with two hydrolyzed proteins commonly used to monitor Anastrepha spp. The mean number of Anastrepha obliqua adults captured during six consecutive weeks using Captor + borax with the addition of 240 mg BC/liter, not renewed during the test, was similar to Captor + borax that was replaced at weekly intervals and was more effective than Captor + borax without BC. Numbers of A. obliqua flies captured in 30% CeraTrap diluted in water containing 240 mg BC/liter were similar to those caught in traps baited with Captor + borax or 30% CeraTrap without BC in the first 9 d of evaluation but was significantly more effective than both lures after 56 d. After >2 mo of use, 30% CeraTrap containing 240 mg BC/liter remained as effective as newly prepared 30% CeraTrap. The addition of BC to lures reduced surface tension of liquid lures by ~40-50%. However, when BC was increased to 720 mg BC/liter, only a small additional reduction in surface tension was observed and higher concentrations of BC did not increase capture rates. These findings could contribute to reduced costs for trapping networks and the development of long-lasting formulations of liquid protein lures for bait stations and mass-trapping targeted at major tephritid pests. © The Author(s) 2017. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Electrostatic Charging and Particle Interactions in Microscopic Insulating Grains

NASA Astrophysics Data System (ADS)

Lee, Victor

In this thesis, we experimentally investigate the electrostatic charging as well as the particle interactions in microscopic insulating grains. First, by tracking individual grains accelerated in an electric field, we quantitatively demonstrate that tribocharging of same-material grains depends on particle size. Large grains tend to charge positively, and small ones tend to charge negatively. Theories based on the transfer of trapped electrons can explain this tendency but have not been validated. Here we show that the number of trapped electrons, measured independently by a thermoluminescence technique, is orders of magnitude too small to be responsible for the amount of charge transferred. This result reveals that trapped electrons are not responsible for same-material tribocharging of dielectric particles. Second, same-material tribocharging in grains can result in important long-range electrostatic interactions. However, how these electrostatic interactions contribute to particle clustering remains elusive, primarily due to the lack of direct, detailed observations. Using a high-speed camera that falls with a stream charged grains, we observe for the first time how charged grains can undergo attractive as well as repulsive Kepler-like orbits. Charged particles can be captured in their mutual electrostatic potential and form clusters via multiple bounces. Dielectric polarization effects are directly observed, which lead to additional attractive forces and stabilize "molecule-like" arrangements of charged particles. Third, we have developed a new method to study the charge transfer of microscopic particles based on acoustic levitation techniques. This method allows us to narrow the complex problem of many-particle charging down to precise charge measurements of a single sub-millimeter particle colliding with a target plate. By simply attaching nonpolar groups onto glass surfaces, we show that the contact charging of a particle is highly dependent on hydrophobicity. Charging between a hydrophilic and a hydrophobic surface is enhanced in a basic atmosphere and suppressed in an acidic one. Moreover, hydrophobicity is also found to play a key role in particle charging driven by an external electric field. These results strongly support the idea that aqueous-ion transfer is responsible for the particle contact charging phenomenon.

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Formation of high-β plasma and stable confinement of toroidal electron plasma in Ring Trap 1a)

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Furukawa, M.; Yano, Y.; Kawai, Y.; Kobayashi, M.; Vogel, G.; Mikami, H.

2011-05-01

Formation of high-β electron cyclotron resonance heating plasma and stable confinement of pure electron plasma have been realized in the Ring Trap 1 device, a magnetospheric configuration generated by a levitated dipole field magnet. The effects of coil levitation resulted in drastic improvements of the confinement properties, and the maximum local β value has exceeded 70%. Hot electrons are major component of electron populations, and its particle confinement time is 0.5 s. Plasma has a peaked density profile in strong field region [H. Saitoh et al., 23rd IAEA Fusion Energy Conference EXC/9-4Rb (2010)]. In pure electron plasma experiment, inward particle diffusion is realized, and electrons are stably trapped for more than 300 s. When the plasma is in turbulent state during beam injection, plasma flow has a shear, which activates the diocotron (Kelvin-Helmholtz) instability. The canonical angular momentum of the particle is not conserved in this phase, realizing the radial diffusion of charged particles across closed magnetic surfaces. [Z. Yoshida et al., Phys Rev. Lett. 104, 235004 (2010); H. Saitoh et al., Phys. Plasmas 17, 112111 (2010).].

Electron spin resonance study of atomic hydrogen stabilized in solid neon below 1 K

NASA Astrophysics Data System (ADS)

Sheludiakov, S.; Ahokas, J.; Järvinen, J.; Lehtonen, L.; Vasiliev, S.; Dmitriev, Yu. A.; Lee, D. M.; Khmelenko, V. V.

2018-03-01

We report on an electron spin resonance study of atomic hydrogen stabilized in solid Ne matrices carried out at a high field of 4.6 T and temperatures below 1 K . The films of Ne, slowly deposited on the substrate at a temperature of ˜1 K , exhibited a high degree of porosity. We found that H atoms may be trapped in two different substitutional positions in the Ne lattice as well as inside clusters of pure molecular H2 in the pores of the Ne film. The latter type of atoms was very unstable against recombination at temperatures 0.3-0.6 K . Based on the observed nearly instant decays after rapid small increases of temperature, we evaluate the lower limit of the recombination rate constant kr≥5 ×10-20cm3s-1 at 0.6 K , five orders of magnitude larger than that previously found in the thin films of pure H2 at the same temperature. Such behavior assumes a very high mobility of atoms and may indicate a solid-to-liquid transition for H2 clusters of certain sizes, similar to that observed in experiments with H2 clusters inside helium droplets [Phys. Rev. Lett. 101, 205301 (2008), 10.1103/PhysRevLett.101.205301]. We found that the efficiency of dissociation of H2 in neon films is enhanced by two orders of magnitude compared to that in pure H2 as a result of the strong action of secondary electrons.

Theoretical investigations of geometry, electronic structure and stability of UO(6): octahedral uranium hexoxide and its isomers.

PubMed

Xiao, Hai; Hu, Han-Shi; Schwarz, W H Eugen; Li, Jun

2010-08-26

The existence of a novel octahedral UO(6) complex had been suggested by Pyykko et al. [Pyykko, P.; Runeberg, N.; Straka, M.; Dyall, K. G. Chem. Phys. Lett. 2000, 328, 415]. We have now investigated the stability, the geometric and electronic structures, and the vibrations of various UO(6) molecules, using spin-orbit density functional and scalar-relativistic coupled-cluster approaches. We find four different (meta-)stable species, namely (3)D(2h)-UO(2)(eta(2)-O(2)(*))(2) at lowest energy, (3)C(2v)-UO(4)(*)(eta(2)-O(2)(*)) and (1)D(3)-U(eta(2)-O(2))(3) at medium energies, and (1)O(h)-UO(6) at highest energy. The decay of O(h)-UO(6) occurs via an activated spin-flip mechanism. The UO(6) species correspond to local minima on singlet and triplet energy surfaces and might be trapped in noble gas matrices. Experimentally, the four species might be identified through their vibrational spectra. Uranium is best described as coordinated by oxygen atoms in various oxidation states as oxo O(2-), oxido(1) O(*-), peroxido O(2)(2-), and superoxido O(2)(*-) ligands. The occurrence of monovalent oxygen is remarkable. The resulting characterization of the central ion as U(VI) in all four cases does not fully reflect the electronic differences, nor the "valence-activity" of the U-6p(6) semicore shell.

RADIATION SOURCE

DOEpatents

Gow, J.D.

1961-06-27

An improved version of a crossed electric and magnetic field plasma producing and containing device of the general character disclosed in U. S. Patent No. 2,967,943 is described. This device employs an annular magnet encased within an anode and a pair of cathodes respectively coaxially spaced from the opposite ends of the anode to establish crossed field electron trapping regions adjacent the ends of the anode. The trapping regions are communicably connected through the throat of the anode and the electric field negatively increases in opposite axial directions from the center of the throat. Electrons are trapped within the two trapping regions and throat to serve as a source of intense ionization to gas introduced thereto, the ions in copious quantities being attracted to the cathodes to bombard neutron productive targets dlsposed - thereat.

Quantum Hall signatures of dipolar Mahan excitons

NASA Astrophysics Data System (ADS)

Schinner, G. J.; Repp, J.; Kowalik-Seidl, K.; Schubert, E.; Stallhofer, M. P.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Govorov, A. O.; Holleitner, A. W.; Kotthaus, J. P.

2013-01-01

We explore the photoluminescence of spatially indirect, dipolar Mahan excitons in a gated double quantum well diode containing a mesoscopic electrostatic trap for neutral dipolar excitons at low temperatures down to 250 mK and in quantizing magnetic fields. Mahan excitons in the surrounding of the trap, consisting of individual holes interacting with a degenerate two-dimensional electron system confined in one of the quantum wells, exhibit strong quantum Hall signatures at integer filling factors and related anomalies around filling factor ν=(2)/(3),(3)/(5), and (1)/(2), reflecting the formation of composite fermions. Interactions across the trap perimeter are found to influence the energy of the confined neutral dipolar excitons by the presence of the quantum Hall effects in the two-dimensional electron system surrounding the trap.

Stabilization of solitons under competing nonlinearities by external potentials

NASA Astrophysics Data System (ADS)

Zegadlo, Krzysztof B.; Wasak, Tomasz; Malomed, Boris A.; Karpierz, Miroslaw A.; Trippenbach, Marek

2014-12-01

We report results of the analysis for families of one-dimensional (1D) trapped solitons, created by competing self-focusing (SF) quintic and self-defocusing (SDF) cubic nonlinear terms. Two trapping potentials are considered, the harmonic-oscillator (HO) and delta-functional ones. The models apply to optical solitons in colloidal waveguides and other photonic media, and to matter-wave solitons in Bose-Einstein condensates loaded into a quasi-1D trap. For the HO potential, the results are obtained in an approximate form, using the variational and Thomas-Fermi approximations, and in a full numerical form, including the ground state and the first antisymmetric excited one. For the delta-functional attractive potential, the results are produced in a fully analytical form, and verified by means of numerical methods. Both exponentially localized solitons and weakly localized trapped modes are found for the delta-functional potential. The most essential conclusions concern the applicability of competing Vakhitov-Kolokolov (VK) and anti-VK criteria to the identification of the stability of solitons created under the action of the competing SF and SDF terms.

Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Anqi; Yang, Xuelin, E-mail: xlyang@pku.edu.cn; Cheng, Jianpeng

2016-01-25

We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers.more » The trap activation energies (0.38–0.39 eV and 0.57–0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38–0.39 eV trap is related to residual carbon incorporation while the 0.57–0.59 eV trap is correlated with native defects or complexes.« less

Toroidal marginally outer trapped surfaces in closed Friedmann-Lemaître-Robertson-Walker spacetimes: Stability and isoperimetric inequalities

NASA Astrophysics Data System (ADS)

Mach, Patryk; Xie, Naqing

2017-10-01

We investigate toroidal marginally outer trapped surfaces (MOTS) and marginally outer trapped tubes (MOTT) in closed Friedmann-Lemaître-Robertson-Walker (FLRW) geometries. They are constructed by embedding constant mean curvature (CMC) Clifford tori in a FLRW spacetime. This construction is used to assess the quality of certain isoperimetric inequalities, recently proved in axial symmetry. Similarly to spherically symmetric MOTS existing in FLRW spacetimes, the toroidal ones are also unstable.

Testing the Model of Oscillating Magnetic Traps

NASA Astrophysics Data System (ADS)

Szaforz, Ż.; Tomczak, M.

2015-01-01

The aim of this paper is to test the model of oscillating magnetic traps (the OMT model), proposed by Jakimiec and Tomczak ( Solar Phys. 261, 233, 2010). This model describes the process of excitation of quasi-periodic pulsations (QPPs) observed during solar flares. In the OMT model energetic electrons are accelerated within a triangular, cusp-like structure situated between the reconnection point and the top of a flare loop as seen in soft X-rays. We analyzed QPPs in hard X-ray light curves for 23 flares as observed by Yohkoh. Three independent methods were used. We also used hard X-ray images to localize magnetic traps and soft X-ray images to diagnose thermal plasmas inside the traps. We found that the majority of the observed pulsation periods correlates with the diameters of oscillating magnetic traps, as was predicted by the OMT model. We also found that the electron number density of plasma inside the magnetic traps in the time of pulsation disappearance is strongly connected with the pulsation period. We conclude that the observations are consistent with the predictions of the OMT model for the analyzed set of flares.

Measurement of the trapping and detrapping properties of polymers in relation with their microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vallayer, B.; Hourquebie, P.; Marsacq, D.

1996-12-31

In the field of Space Charge Physics, the role of electrical traps on space charge behavior and therefore on the breakdown properties has been now well-established. However, the traps in polymers are very difficult to define compared to the case of ceramics for which a lot of studies have been performed. A new specific method for measuring the trapping and detrapping properties of dielectric materials has been developed. This method allows to characterize the electrostatic state of an insulating sample after irradiation by a high energy electron beam. The authors discuss the basis of the method and its general possibilitiesmore » to measure the breakdown relevant parameters as the secondary electron yield for instance. Moreover, the method has been used on several polymers as HDPE and LDPE. The difference of trapping properties between those materials can be explained by microstructure evolutions (crystallinity ratio) due to a difference of the branching rate. This difference of trapping and detrapping properties of these two polymers could be connected to the breakdown behavior of the two materials which is known to be very different.« less

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Hidden vorticity in binary Bose-Einstein condensates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brtka, Marijana; Gammal, Arnaldo; Malomed, Boris A.

We consider a binary Bose-Einstein condensate (BEC) described by a system of two-dimensional (2D) Gross-Pitaevskii equations with the harmonic-oscillator trapping potential. The intraspecies interactions are attractive, while the interaction between the species may have either sign. The same model applies to the copropagation of bimodal beams in photonic-crystal fibers. We consider a family of trapped hidden-vorticity (HV) modes in the form of bound states of two components with opposite vorticities S{sub 1,2}={+-}1, the total angular momentum being zero. A challenging problem is the stability of the HV modes. By means of a linear-stability analysis and direct simulations, stability domains aremore » identified in a relevant parameter plane. In direct simulations, stable HV modes feature robustness against large perturbations, while unstable ones split into fragments whose number is identical to the azimuthal index of the fastest growing perturbation eigenmode. Conditions allowing for the creation of the HV modes in the experiment are discussed too. For comparison, a similar but simpler problem is studied in an analytical form, viz., the modulational instability of an HV state in a one-dimensional (1D) system with periodic boundary conditions (this system models a counterflow in a binary BEC mixture loaded into a toroidal trap or a bimodal optical beam coupled into a cylindrical shell). We demonstrate that the stabilization of the 1D HV modes is impossible, which stresses the significance of the stabilization of the HV modes in the 2D setting.« less

Off-pathway assembly of fimbria subunits is prevented by chaperone CfaA of CFA/I fimbriae from enterotoxigenic E. coli.

PubMed

Bao, Rui; Liu, Yang; Savarino, Stephen J; Xia, Di

2016-12-01

The assembly of the class 5 colonization factor antigen I (CFA/I) fimbriae of enterotoxigenic E. coli was proposed to proceed via the alternate chaperone-usher pathway. Here, we show that in the absence of the chaperone CfaA, CfaB, the major pilin subunit of CFA/I fimbriae, is able to spontaneously refold and polymerize into cyclic trimers. CfaA kinetically traps CfaB to form a metastable complex that can be stabilized by mutations. Crystal structure of the stabilized complex reveals distinctive interactions provided by CfaA to trap CfaB in an assembly competent state through donor-strand complementation (DSC) and cleft-mediated anchorage. Mutagenesis indicated that DSC controls the stability of the chaperone-subunit complex and the cleft-mediated anchorage of the subunit C-terminus additionally assist in subunit refolding. Surprisingly, over-stabilization of the chaperone-subunit complex led to delayed fimbria assembly, whereas destabilizing the complex resulted in no fimbriation. Thus, CfaA acts predominantly as a kinetic trap by stabilizing subunit to avoid its off-pathway self-polymerization that results in energetically favorable trimers and could serve as a driving force for CFA/I pilus assembly, representing an energetic landscape unique to class 5 fimbria assembly. Published 2016. This article is a U.S. Government work and is in the public domain in the USA. Molecular Microbiology published by John Wiley & Sons Ltd.

Trapping two types of particles with a focused generalized Multi-Gaussian Schell model beam

NASA Astrophysics Data System (ADS)

Liu, Xiayin; Zhao, Daomu

2015-11-01

We numerically investigate the trapping effect of the focused generalized Multi-Gaussian Schell model (GMGSM) beam of the first kind which produces dark hollow beam profile at the focal plane. By calculating the radiation forces on the Rayleigh dielectric sphere in the focused GMGSM beam, we show that such beam can trap low-refractive-index particles at the focus, and simultaneously capture high-index particles at different positions of the focal plane. The trapping range and stability depend on the values of the beam index N and the coherence width. Under the same conditions, the low limits of the radius of low-index and high-index particles for stable trapping are indicated to be different.

Control of Screening of a Charged Particle in Electrolytic Aqueous Paul Trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jae Hyun nmn; Krstic, Predrag S

2011-01-01

Individual charged particles could be trapped and confined in the combined radio-frequency and DC quadrupole electric field of an aqueous Paul trap. Viscosity of water improves confinement and extends the range of the trap parameters which characterize the stability of the trap. Electrolyte, if present in aqueous solution, may screen the charged particle and thus partially or fully suppress electrophoretic interaction with the applied filed, possibly reducing it to a generally much weaker dielectrophoretic interaction with an induced dipole. Applying molecular dynamics simulation we show that the quadrupole field has a different affects at the electrolyte ions and at muchmore » heavier charged particle, effectively eliminating the screening effect and reinstating the electrophoretic confinement.« less

Control Of Screening Of A Charged Particle In Electrolytic Aqueous Paul Trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jae Hyun; Krstic, Predrag S.

2011-06-01

Individual charged particles could be trapped and confined by the combined radio-frequency and DC quadrupole electric field of an aqueous Paul trap. Viscosity of water improves confinement and extends the range of the trap parameters which characterize the stability of the trap. Electrolyte, if present in aqueous solution, may screen the charged particle and thus partially or fully suppress electrophoretic interaction with the applied filed, possibly reducing it to a generally much weaker dielectrophoretic interaction with an induced dipole. Applying molecular dynamics simulation we show that the quadrupole field has a different effect at the electrolyte ions and at muchmore » heavier charged particle, effectively eliminating the screening by electrolyte ions and reinstating the electrophoretic confinement.« less

Geometrical effects on the electron residence time in semiconductor nano-particles.

PubMed

Koochi, Hakimeh; Ebrahimi, Fatemeh

2014-09-07

We have used random walk (RW) numerical simulations to investigate the influence of the geometry on the statistics of the electron residence time τ(r) in a trap-limited diffusion process through semiconductor nano-particles. This is an important parameter in coarse-grained modeling of charge carrier transport in nano-structured semiconductor films. The traps have been distributed randomly on the surface (r(2) model) or through the whole particle (r(3) model) with a specified density. The trap energies have been taken from an exponential distribution and the traps release time is assumed to be a stochastic variable. We have carried out (RW) simulations to study the effect of coordination number, the spatial arrangement of the neighbors and the size of nano-particles on the statistics of τ(r). It has been observed that by increasing the coordination number n, the average value of electron residence time, τ̅(r) rapidly decreases to an asymptotic value. For a fixed coordination number n, the electron's mean residence time does not depend on the neighbors' spatial arrangement. In other words, τ̅(r) is a porosity-dependence, local parameter which generally varies remarkably from site to site, unless we are dealing with highly ordered structures. We have also examined the effect of nano-particle size d on the statistical behavior of τ̅(r). Our simulations indicate that for volume distribution of traps, τ̅(r) scales as d(2). For a surface distribution of traps τ(r) increases almost linearly with d. This leads to the prediction of a linear dependence of the diffusion coefficient D on the particle size d in ordered structures or random structures above the critical concentration which is in accordance with experimental observations.

Driven Bose-Hubbard model with a parametrically modulated harmonic trap

NASA Astrophysics Data System (ADS)

Mann, N.; Bakhtiari, M. Reza; Massel, F.; Pelster, A.; Thorwart, M.

2017-04-01

We investigate a one-dimensional Bose-Hubbard model in a parametrically driven global harmonic trap. The delicate interplay of both the local interaction of the atoms in the lattice and the driving of the global trap allows us to control the dynamical stability of the trapped quantum many-body state. The impact of the atomic interaction on the dynamical stability of the driven quantum many-body state is revealed in the regime of weak interaction by analyzing a discretized Gross-Pitaevskii equation within a Gaussian variational ansatz, yielding a Mathieu equation for the condensate width. The parametric resonance condition is shown to be modified by the atom interaction strength. In particular, the effective eigenfrequency is reduced for growing interaction in the mean-field regime. For a stronger interaction, the impact of the global parametric drive is determined by the numerically exact time-evolving block decimation scheme. When the trapped bosons in the lattice are in a Mott insulating state, the absorption of energy from the driving field is suppressed due to the strongly reduced local compressibility of the quantum many-body state. In particular, we find that the width of the local Mott region shows a breathing dynamics. Finally, we observe that the global modulation also induces an effective time-independent inhomogeneous hopping strength for the atoms.

Technical developments for an upgrade of the LEBIT Penning trap mass spectrometry facility for rare isotopes

NASA Astrophysics Data System (ADS)

Redshaw, M.; Barquest, B. R.; Bollen, G.; Bustabad, S. E.; Campbell, C. M.; Ferrer, R.; Gehring, A.; Kwiatkowski, A. A.; Lincoln, D. L.; Morrissey, D. J.; Pang, G. K.; Ringle, R.; Schwarz, S.

2011-07-01

The LEBIT (Low Energy Beam and Ion Trap) facility is the only Penning trap mass spectrometry (PTMS) facility to utilize rare isotopes produced via fast-beam fragmentation. This technique allows access to practically all elements lighter than uranium, and in particular enables the production of isotopes that are not available or that are difficult to obtain at isotope separation on-line facilities. The preparation of the high-energy rare-isotope beam produced by projectile fragmentation for low-energy PTMS experiments is achieved by gas stopping to slow down and thermalize the fast-beam ions, along with an rf quadrupole cooler and buncher and rf quadrupole ion guides to deliver the beam to the Penning trap. During its first phase of operation LEBIT has been very successful, and new developments are now underway to access rare isotopes even farther from stability, which requires dealing with extremely short lifetimes and low production rates. These developments aim at increasing delivery efficiency, minimizing delivery and measurement time, and maximizing use of available beam time. They include an upgrade to the gas-stopping station, active magnetic field monitoring and stabilization by employing a miniature Penning trap as a magnetometer, the use of stored waveform inverse Fourier transform (SWIFT) to most effectively remove unwanted ions, and charge breeding.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

NASA Astrophysics Data System (ADS)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Effect of electron irradiation dose on the performance of avalanche photodiode electron detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawauchi, Taizo; Wilde, Markus; Fukutani, Katsuyuki

2009-01-01

Avalanche photodiodes (APDs) are efficient detectors for electrons with energies below 100 keV. The damaging effects of 8 keV electron beam irradiation on the dark current and the output signal of the APD detector were investigated in this study. The APD dark current increases after electron doses exceeding 1.4x10{sup 13} cm{sup -2}. Preirradiation by high doses of 8 keV electrons further causes a deformation of the pulse height distribution of the APD output in the subsequent detection of low-flux electrons. This effect is particularly prominent when the energy of the detected electrons is lower than that of the damaging electrons.more » By comparing the experimental data with results of a simulation based on an electron trapping model, we conclude that the degradation of the APD performance is attributable to an enhancement of secondary-electron trapping at irradiation induced defects.« less

Density-Gradient-Driven trapped-electron-modes in improved-confinement RFP plasmas

NASA Astrophysics Data System (ADS)

Duff, James

2016-10-01

Short wavelength density fluctuations in improved-confinement MST plasmas exhibit multiple features characteristic of the trapped-electron-mode (TEM), strong evidence that drift wave turbulence emerges in RFP plasmas when transport associated with MHD tearing is reduced. Core transport in the RFP is normally governed by magnetic stochasticity stemming from long wavelength tearing modes that arise from current profile peaking. Using inductive control, the tearing modes are reduced and global confinement is increased to values expected for a comparable tokamak plasma. The improved confinement is associated with a large increase in the pressure gradient that can destabilize drift waves. The measured density fluctuations have frequencies >50 kHz, wavenumbers k_phi*rho_s<0.14, and propagate in the electron drift direction. Their spectral emergence coincides with a sharp decrease in fluctuations associated with global tearing modes. Their amplitude increases with the local density gradient, and they exhibit a density-gradient threshold at R/L_n 15, higher than in tokamak plasmas by R/a. the GENE code, modified for RFP equilibria, predicts the onset of microinstability for these strong-gradient plasma conditions. The density-gradient-driven TEM is the dominant instability in the region where the measured density fluctuations are largest, and the experimental threshold-gradient is close to the predicted critical gradient for linear stability. While nonlinear analysis shows a large Dimits shift associated with predicted strong zonal flows, the inclusion of residual magnetic fluctuations causes a collapse of the zonal flows and an increase in the predicted transport to a level close to the experimentally measured heat flux. Similar circumstances could occur in the edge region of tokamak plasmas when resonant magnetic perturbations are applied for the control of ELMs. Work supported by US DOE.

Flight data analysis and further development of variable-conductance heat pipes. [for aircraft control

NASA Technical Reports Server (NTRS)

Enginer, J. E.; Luedke, E. E.; Wanous, D. J.

1976-01-01

Continuing efforts in large gains in heat-pipe performance are reported. It was found that gas-controlled variable-conductance heat pipes can perform reliably for long periods in space and effectively provide temperature stabilization for spacecraft electronics. A solution was formulated that allows the control gas to vent through arterial heat-pipe walls, thus eliminating the problem of arterial failure under load, due to trace impurities of noncondensable gas trapped in an arterial bubble during priming. This solution functions well in zero gravity. Another solution was found that allows priming at a much lower fluid charge. A heat pipe with high capacity, with close temperature control of the heat source and independent of large variations in sink temperature was fabricated.

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

2010-11-01

A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.

Barrier-free subsurface incorporation of 3 d metal atoms into Bi(111) films

DOE PAGES

Klein, C.; Vollmers, N. J.; Gerstmann, U.; ...

2015-05-27

By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3 d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observedmore » for topological insulators formed by substrate-stabilized Bi bilayers.« less

Self-assembled nanogel of hydrophobized dendritic dextrin for protein delivery.

PubMed

Ozawa, Yayoi; Sawada, Shin-Ichi; Morimoto, Nobuyuki; Akiyoshi, Kazunari

2009-07-07

Highly branched cyclic dextrin derivatives (CH-CDex) that are partly substituted with cholesterol groups have been synthesized. The CH-CDex forms monodisperse and stable nanogels with a hydrodynamic radii of approximately 10 nm by the self-assembly of 4-6 CH-CDex macromolecules in water. The CH-CDex nanogels spontaneously trap 10-16 molecules of fluorescein isothiocyanate-labeled insulin (FITC-Ins). The complex shows high colloidal stability: no dissociation of trapped insulin is observed after at least 1 month in phosphate buffer (0.1 M, pH 8.0). In the presence of bovine serum albumin (BSA, 50 mg . mL(-1)), which is a model blood system, the FITC-Ins trapped in the nanogels is continuously released ( approximately 20% at 12 h) without burst release. The high-density nanogel structure derived from the highly branched CDex significantly affects the stability of the nanogel-protein complex.

RF Stabilization for Storage of Antiprotons

NASA Technical Reports Server (NTRS)

Pearson, J. Boise; Lewis, Raymond A.

2005-01-01

Portable storage of antimatter is an important step in the experimental exploration of antimatter in propulsion applications. The High Performance Antiproton Trap (HiPAT) at NASA Marshall Space Flight Center is a Penning-Malmberg ion trap being developed to trap and store low energy antiprotons for a period of weeks. The antiprotons can then be transported for use in experiments. HiPAT is being developed and evaluated using normal matter, before an attempt is made to store and transport antiprotons. Stortd ions have inherent instabilities that limit the storage lifetime. RF stabilization at cyclotron resonance frequencies is demonstrated over a period of 6 days for normal matter ion clouds. A variety of particles have been stored, including protons, C+ ions, and H2+ ions. Cyclotron resonance frequencies are defined and experimental evidence presented to demonstrate excitation of cyclotron waves in the plasma for all three species of ions.

Inhibition by stabilization: targeting the Plasmodium falciparum aldolase-TRAP complex.

PubMed

Nemetski, Sondra Maureen; Cardozo, Timothy J; Bosch, Gundula; Weltzer, Ryan; O'Malley, Kevin; Ejigiri, Ijeoma; Kumar, Kota Arun; Buscaglia, Carlos A; Nussenzweig, Victor; Sinnis, Photini; Levitskaya, Jelena; Bosch, Jürgen

2015-08-20

Emerging resistance of the malaria parasite Plasmodium to current therapies underscores the critical importance of exploring novel strategies for disease eradication. Plasmodium species are obligate intracellular protozoan parasites. They rely on an unusual form of substrate-dependent motility for their migration on and across host-cell membranes and for host cell invasion. This peculiar motility mechanism is driven by the 'glideosome', an actin-myosin associated, macromolecular complex anchored to the inner membrane complex of the parasite. Myosin A, actin, aldolase, and thrombospondin-related anonymous protein (TRAP) constitute the molecular core of the glideosome in the sporozoite, the mosquito stage that brings the infection into mammals. Virtual library screening of a large compound library against the PfAldolase-TRAP complex was used to identify candidate compounds that stabilize and prevent the disassembly of the glideosome. The mechanism of these compounds was confirmed by biochemical, biophysical and parasitological methods. A novel inhibitory effect on the parasite was achieved by stabilizing a protein-protein interaction within the glideosome components. Compound 24 disrupts the gliding and invasive capabilities of Plasmodium parasites in in vitro parasite assays. A high-resolution, ternary X-ray crystal structure of PfAldolase-TRAP in complex with compound 24 confirms the mode of interaction and serves as a platform for future ligand optimization. This proof-of-concept study presents a novel approach to anti-malarial drug discovery and design. By strengthening a protein-protein interaction within the parasite, an avenue towards inhibiting a previously "undruggable" target is revealed and the motility motor responsible for successful invasion of host cells is rendered inactive. This study provides new insights into the malaria parasite cell invasion machinery and convincingly demonstrates that liver cell invasion is dramatically reduced by 95 % in the presence of the small molecule stabilizer compound 24.

Ionization of polarized 3He+ ions in EBIS trap with slanted electrostatic mirror.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pikin,A.; Zelenski, A.; Kponou, A.

2007-09-10

Methods of producing the nuclear polarized {sup 3}He{sup +} ions and their ionization to {sup 3}H{sup ++} in ion trap of the electron Beam Ion Source (EBIS) are discussed. Computer simulations show that injection and accumulation of {sup 3}He{sup +} ions in the EBIS trap with slanted electrostatic mirror can be very effective for injection times longer than the ion traversal time through the trap.

Ionization of polarized {sup 3}He{sup +} ions in EBIS trap with slanted electrostatic mirror

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pikin, A.; Zelenski, A.; Kponou, A.

2008-02-06

Methods of producing the nuclear polarized {sup 3}He{sup +} ions and their ionization to {sup 3}He{sup ++} in ion trap of the electron Beam Ion Source (EBIS) are discussed. Computer simulations show that injection and accumulation of {sup 3}He{sup +} ions in the EBIS trap with slanted electrostatic mirror can be very effective for injection times longer than the ion traversal time through the trap.

Electron trapping in evolving coronal structures during a large gradual hard X-ray/radio burst

NASA Technical Reports Server (NTRS)

Bruggmann, G.; Vilmer, N.; Klein, K.-L.; Kane, S. R.

1994-01-01

Gradual hard X-ray/radio bursts are characterized by their long duration, smooth time profile, time delays between peaks at different hard X-ray energies and microwaves, and radiation from extended sources in the low and middle corona. Their characteristic properties have been ascribed to the dynamic evolution of the accelerated electrons in coronal magnetic traps or to the separate acceleration of high-energy electrons in a 'second step' process. The information available so far was drawn from quality considerations of time profiles or even only from the common occurrence of emissions in different spectral ranges. This paper presents model computations of the temporal evolution of hard X-ray and microwave spectra, together with a qualitative discussion of radio lightcurves over a wide spectral range, and metric imaging observations. The basis hypothesis investigated is that the peculiar 'gradual' features can be related to the dynamical evolution of electrons injected over an extended time interval in a coronal trap, with electrons up to relativistic energies being injected simultaneously. The analyzed event (26 April. 1981) is particularly challenging to this hypothesis because of the long time delays between peaks at different X-ray energies and microwave frequencies. The observations are shown to be consistent with the hypothesis, provided that the electrons lose their energy by Coulomb collisions and possibly betatron deceleration. The access of the electrons to different coronal structures varies in the course of the event. The evolution and likely destabilization of part of the coronal plasma-magnetic field configuration is of crucial influence in determining the access to these structures and possibly the dynamical evolution of the trapped electrons through betatron deceleration in the late phase of the event.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a modelmore » taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.« less

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Electron impact action spectroscopy of mass/charge selected macromolecular ions: Inner-shell excitation of ubiquitin protein

NASA Astrophysics Data System (ADS)

Ranković, Miloš Lj.; Giuliani, Alexandre; Milosavljević, Aleksandar R.

2016-02-01

We have performed inner-shell electron impact action spectroscopy of mass and charge selected macromolecular ions. For this purpose, we have coupled a focusing electron gun with a linear quadrupole ion trap mass spectrometer. This experiment represents a proof of principle that an energy-tunable electron beam can be used in combination with radio frequency traps as an activation method in tandem mass spectrometry (MS2) and allows performing action spectroscopy. Electron impact MS2 spectra of multiply protonated ubiquitin protein ion have been recorded at incident electron energies around the carbon 1 s excitation. Both MS2 and single ionization energy dependence spectra are compared with literature data obtained using the soft X-ray activation conditions.

Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices

NASA Astrophysics Data System (ADS)

Smieska, Louisa Marion

Organic semiconductors could have wide-ranging applications in lightweight, efficient electronic circuits. However, several fundamental questions regarding organic electronic device behavior have not yet been fully addressed, including the nature of chemical charge traps, and robust models for injection and transport. Many studies focus on engineering devices through bulk transport measurements, but it is not always possible to infer the microscopic behavior leading to the observed measurements. In this thesis, we present scanning-probe microscope studies of organic semiconductor devices in an effort to connect local properties with local device behavior. First, we study the chemistry of charge trapping in pentacene transistors. Working devices are doped with known pentacene impurities and the extent of charge trap formation is mapped across the transistor channel. Trap-clearing spectroscopy is employed to measure an excitation of the pentacene charge trap species, enabling identification of the degradationrelated chemical trap in pentacene. Second, we examine transport and trapping in peryelene diimide (PDI) transistors. Local mobilities are extracted from surface potential profiles across a transistor channel, and charge injection kinetics are found to be highly sensitive to electrode cleanliness. Trap-clearing spectra generally resemble PDI absorption spectra, but one derivative yields evidence indicating variation in trap-clearing mechanisms for different surface chemistries. Trap formation rates are measured and found to be independent of surface chemistry, contradicting a proposed silanol trapping mechanism. Finally, we develop a variation of scanning Kelvin probe microscopy that enables measurement of electric fields through a position modulation. This method avoids taking a numeric derivative of potential, which can introduce high-frequency noise into the electric field signal. Preliminary data is presented, and the theoretical basis for electric field noise in both methods is examined.

Time-resolved electric force microscopy of charge traps in polycrystalline pentacene films

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2006-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al, Adv. Mater. 17 1410 (2005)]. We have extended their work by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We have also made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Integrated-rate kinetics data supports a charge trap mechanism which is second order in holes, e.g., holes trap in pairs, although the charge-trapping rate appears to depend on gate voltage.

An electron beam ion trap and source for re-acceleration of rare-isotope ion beams at TRIUMF

NASA Astrophysics Data System (ADS)

Blessenohl, M. A.; Dobrodey, S.; Warnecke, C.; Rosner, M. K.; Graham, L.; Paul, S.; Baumann, T. M.; Hockenbery, Z.; Hubele, R.; Pfeifer, T.; Ames, F.; Dilling, J.; Crespo López-Urrutia, J. R.

2018-05-01

Electron beam driven ionization can produce highly charged ions (HCIs) in a few well-defined charge states. Ideal conditions for this are maximally focused electron beams and an extremely clean vacuum environment. A cryogenic electron beam ion trap fulfills these prerequisites and delivers very pure HCI beams. The Canadian rare isotope facility with electron beam ion source-electron beam ion sources developed at the Max-Planck-Institut für Kernphysik (MPIK) reaches already for a 5 keV electron beam and a current of 1 A with a density in excess of 5000 A/cm2 by means of a 6 T axial magnetic field. Within the trap, the beam quickly generates a dense HCI population, tightly confined by a space-charge potential of the order of 1 keV times the ionic charge state. Emitting HCI bunches of ≈107 ions at up to 100 Hz repetition rate, the device will charge-breed rare-isotope beams with the mass-over-charge ratio required for re-acceleration at the Advanced Rare IsotopE Laboratory (ARIEL) facility at TRIUMF. We present here its design and results from commissioning runs at MPIK, including X-ray diagnostics of the electron beam and charge-breeding process, as well as ion injection and HCI-extraction measurements.

Local-time survey of plasma at low altitudes over the auroral zones.

NASA Technical Reports Server (NTRS)

Frank, L. A.; Ackerson, K. L.

1972-01-01

Local-time survey of the low-energy proton and electron intensities precipitated into the earth's atmosphere over the auroral zones during periods of magnetic quiescence. This survey was constructed by selecting a typical individual satellite crossing of this region in each of eight local-time sectors from a large library of similar observations with the polar-orbiting satellite Injun 5. The trapping boundary for more-energetic electron intensities, E greater than 45 keV, was found to be a 'natural coordinate' for delineating the boundary between the two major types of lower-energy, 50 less than or equal to E less than or equal to 15,000 eV, electron precipitation commonly observed over the auroral zones at low altitudes. Poleward of this trapping boundary inverted 'V' electron precipitation bands are observed in all local-time sectors. These inverted 'V' electron bands in the evening and midnight sectors are typically more energetic and have greater latitudinal widths than their counterparts in the noon and morning sectors. In general, the main contributors to the electron energy influx into the earth's atmosphere over the auroral zones are the electron inverted 'V' precipitation poleward of the trapping boundary in late evening, the plasma-sheet electron intensities equatorward of this boundary in early morning, and both of these precipitation events near local midnight.

Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS 2

DOE PAGES

Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; ...

2015-01-16

We study the electrical transport properties of atomically thin individual crystalline grains of MoS 2 with four-probe scanning tunneling microscopy. The monolayer MoS 2 domains are synthesized by chemical vapor deposition on SiO 2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carriermore » density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS 2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS 2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS 2.« less

Numerical studies of electron dynamics in oblique quasi-perpendicular collisionless shock waves

NASA Technical Reports Server (NTRS)

Liewer, P. C.; Decyk, V. K.; Dawson, J. M.; Lembege, B.

1991-01-01

Linear and nonlinear electron damping of the whistler precursor wave train to low Mach number quasi-perpendicular oblique shocks is studied using a one-dimensional electromagnetic plasma simulation code with particle electrons and ions. In some parameter regimes, electrons are observed to trap along the magnetic field lines in the potential of the whistler precursor wave train. This trapping can lead to significant electron heating in front of the shock for low beta(e). Use of a 64-processor hypercube concurrent computer has enabled long runs using realistic mass ratios in the full particle in-cell code and thus simulate shock parameter regimes and phenomena not previously studied numerically.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

Evidence for weakly bound electrons in non-irradiated alkane crystals: The electrons as a probe of structural differences in crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pietrow, M., E-mail: mrk@kft.umcs.lublin.pl; Misiak, L. E.; Gagoś, M.

2015-02-14

It is generally assumed that weakly bound (trapped) electrons in organic solids come only from radiolytical (or photochemical) processes like ionization caused by an excited positron entering the sample. This paper presents evidence for the presence of these electrons in non-irradiated samples of docosane. This can be due to the triboelectrification process. We argue that these electrons can be located (trapped) either in interlamellar gaps or in spaces made by non-planar conformers. Electrons from the former ones are bound more weakly than electrons from the latter ones. The origin of Vis absorption for the samples is explained. These spectra canmore » be used as a probe indicating differences in the solid structures of hydrocarbons.« less

Relativistic electron flux comparisons at low and high altitudes with fast time resolution and broad spatial coverage

NASA Technical Reports Server (NTRS)

Imhof, W. L.; Gaines, E. E.; Mcglennon, J. P.; Baker, D. N.; Reeves, G. D.; Belian, R. D.

1994-01-01

Analyses are presented for the first high-time resolution multisatellite study of the spatial and temporal characteristics of a relativistic electron enhancement event with a rapid onset. Measurements of MeV electrons were made from two low-altitude polar orbiting satellites and three spacecraft at synchronous altitude. The electron fluxes observed by the low-altitude satellites include precipitating electrons in both the bounce and drift loss cones as well as electrons that are stably trapped, whereas the observations at geosynchronous altitude are dominated by the trapped population. The fluxes of greater than 1 MeV electrons at low-satellite altitude over a wide range of L shells tracked very well the fluxes greater than 0.93 MeV at synchronous altitude.

Defect studies of nanocrystalline zirconia powders and sintered ceramics

NASA Astrophysics Data System (ADS)

Čížek, Jakub; Melikhova, Oksana; Procházka, Ivan; Kuriplach, Jan; Kužel, Radomír; Brauer, Gerhard; Anwand, Wolfgang; Konstantinova, Tatyana E.; Danilenko, Igor A.

2010-01-01

The main objective of the present paper is to communicate a study of defects behavior in zirconia-based nanomaterials—pressure-compacted yttria-stabilized zirconia (YSZ) nanopowders with different contents of Y2O3 and ceramics obtained by sintering the YZS nanopowders. In addition, YZS single crystals were also investigated. Positron annihilation techniques including positron lifetime and coincidence Doppler broadening with a conventional positron source and Doppler broadening experiments on a monoenergetic positron beam were involved in this study as the principal tools. These techniques were supplemented with transmission electron microscopy and x-ray diffraction observations. In order to get better support of the experimental data interpretation, the state-of-art theoretical calculations of positron parameters were performed for the perfect ZrO2 lattice and selected defect configurations in the YSZ. Theoretical calculations have indicated that neither the oxygen vacancies nor their neutral complexes with substitutional yttrium atoms are capable of positron trapping. On the other hand, the zirconium vacancies are deep positron traps and obviously are responsible for the saturated positron trapping observed in the YSZ single crystals. In the compacted YSZ nanopowders, a majority of positrons is trapped either in the vacancylike defects situated in the negative space-charge layers along grain boundaries (τ1≈185ps) or in vacancy clusters at intersections of grain boundaries (τ2≈370ps) . The intensity ratio I2/I1 was found to be correlated with the mean grain size d as I2/I1˜d-2 . A small fraction of positrons (≈10%) form positronium in large pores (τ3≈2ns,τ4≈30ns) . A significant grain growth during sintering of the YSZ nanopowders above 1000°C was observed.

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

2016-09-01

The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance-voltage (C-V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C-V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C-V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C-V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

Characterization of organic/organic' and organic/inorganic heterojunctions and their light-absorbing and light-emitting properties

NASA Astrophysics Data System (ADS)

Anderson, Michele Lynn

Increasing the efficiency and durability of organic light-emitting diodes (OLEDs) has attracted attention recently due to their prospective wide-spread use as flat-panel displays. The performance and efficiency of OLEDs is understood to be critically dependent on the quality of the device heterojunctions, and on matching the ionization potentials (IP) and the electron affinities (EA) of the luminescent material (LM) with those of the hole (HTA) and electron (ETA) transport agents, respectively. The color and bandwidth of OLED emission color is thought to reflect the packing of the molecules in the luminescent layer. Finally, materials stability under OLED operating conditions is a significant concern. LM, HTA, and ETA thin films were grown in ultra-high vacuum using the molecular beam epitaxy technique. Thin film structure was determined in situ using reflection high energy electron diffraction (RHEED) and ex situ using UV-Vis spectroscopy. LM, HTA, and ETA occupied frontier orbitals (IP) were characterized by ultraviolet photoelectron spectroscopy (UPS), and their unoccupied frontier orbitals (EA) estimated from UV-Vis and fluorescence spectroscopies in combination with the UPS results. The stability of the molecules toward vacuum deposition was verified by compositional analysis of thin film X-ray photoelectron spectra. The stability of these materials toward redox processes was evaluated by cyclic voltammetry in nonaqueous media. Electrochemical data provide a more accurate estimation of the EA since the energetics for addition of an electron to a neutral molecule can be probed directly. The energetic barriers to charge injection into each layer of the device has been correlated to OLED turn-on voltage, indicating that these measurements may be used to screen potential combinations of materials for OLEDs. The chemical reversibility of LM voltammetry appears to limit the performance and lifetimes of solid-state OLEDs due to degradation of the organic layers. The role of oxygen as an electron trap in OLEDs has also been verified electrochemically. Finally, a more accurate determination of the offset of the occupied energy levels at the interface between two organic layers has been achieved via in situ monitoring of the UPS spectrum during heterojunction formation.

Langmuir wave damping decreases slowly

NASA Astrophysics Data System (ADS)

Rose, Harvey

2006-10-01

The onset of stimulated Raman scatter in a single laser speckle occurs (D. S. Montgomery et al., Phys. Plasmas, 9, 2311 (2002)) at lower laser intensity, I, than predicted by linear theory based on classical Landau damping, νL, of the SRS daughter Langmuir wave. Does this imply that SRS onset in a speckled laser beam, propagating through long scale length plasma, is also at odds with linear theory? It has been shown (Harvey A. Rose and D. F. DuBois, Phys. Rev. Lett. 72, 2883 (1994)) that linear convective gain in speckles with large fluctuations of I about the average, , leads to onset at a value of , Ic, small compared to that for onset in a uniform beam. While nonlinear electron trapping effects may occur in very intense speckles, whether or not these effects are sufficient to lower the onset value of below Ic depends on how strongly electrons must be trapped before there is significant reduction in νL. As the amplitude of an SRS daughter Langmuir wave increases, its νL decreases by the factor ν/φb, due to the competition between electron trapping, with electron bounce frequency, φb, and escape of these trapped electrons by advection out of a speckle's side, at rate ν. This result (Harvey A. Rose and David A. Russell, Phys. Plasmas, 8, 4784 (2001)) is valid for ν/φb 1. In this talk I present a nonlinear, transit time damping, calculation of νL and find that reduction by a factor of two does not occur until φb/ν 5. This slow turn on of trapping effects suggests that the linear calculation of Ic is NIF relevant.