Particle trap to sheath contact for a gas-insulated transmission line having a corrugated outer conductor

DOEpatents

Fischer, William H.; Cookson, Alan H.; Yoon, Kue H.

1984-04-10

A particle trap to outer elongated conductor or sheath contact for gas-insulated transmission lines. The particle trap to outer sheath contact of the invention is applicable to gas-insulated transmission lines having either corrugated or non-corrugated outer sheaths. The contact of the invention includes an electrical contact disposed on a lever arm which in turn is rotatably disposed on the particle trap and biased in a direction to maintain contact between the electrical contact and the outer sheath.

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Influence of geometry and material of insulating posts on particle trapping using positive dielectrophoresis.

PubMed

Pesch, Georg R; Du, Fei; Baune, Michael; Thöming, Jorg

2017-02-03

Insulator-based dielectrophoresis (iDEP) is a powerful particle analysis technique based on electric field scattering at material boundaries which can be used, for example, for particle filtration or to achieve chromatographic separation. Typical devices consist of microchannels containing an array of posts but large scale application was also successfully tested. Distribution and magnitude of the generated field gradients and thus the possibility to trap particles depends apart from the applied field strength on the material combination between post and surrounding medium and on the boundary shape. In this study we simulate trajectories of singe particles under the influence of positive DEP that are flowing past one single post due to an external fluid flow. We analyze the influence of key parameters (excitatory field strength, fluid flow velocity, particle size, distance from the post, post size, and cross-sectional geometry) on two benchmark criteria, i.e., a critical initial distance from the post so that trapping still occurs (at fixed particle size) and a critical minimum particle size necessary for trapping (at fixed initial distance). Our approach is fundamental and not based on finding an optimal geometry of insulating structures but rather aims to understand the underlying phenomena of particle trapping. A sensitivity analysis reveals that electric field strength and particle size have the same impact, as have fluid flow velocity and post dimension. Compared to these parameters the geometry of the post's cross-section (i.e. rhomboidal or elliptical with varying width-to-height or aspect ratio) has a rather small influence but can be used to optimize the trapping efficiency at a specific distance. We hence found an ideal aspect ratio for trapping for each base geometry and initial distance to the tip which is independent of the other parameters. As a result we present design criteria which we believe to be a valuable addition to the existing literature. Copyright © 2016 Elsevier B.V. All rights reserved.

Compact modeling of total ionizing dose and aging effects in MOS technologies

DOE PAGES

Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

2015-06-18

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimentalmore » I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.« less

Doping Effect of Graphene Nanoplatelets on Electrical Insulation Properties of Polyethylene: From Macroscopic to Molecular Scale

PubMed Central

Jing, Ziang; Li, Changming; Zhao, Hong; Zhang, Guiling; Han, Baozhong

2016-01-01

The doping effect of graphene nanoplatelets (GNPs) on electrical insulation properties of polyethylene (PE) was studied by combining experimental and theoretical methods. The electric conduction properties and trap characteristics were tested for pure PE and PE/GNPs composites by using a direct measurement method and a thermal stimulated current (TSC) method. It was found that doping smaller GNPs is more beneficial to decrease the conductivity of PE/GNPs. The PE/GNPs composite with smaller size GNPs mainly introduces deep energy traps, while with increasing GNPs size, besides deep energy traps, shallow energy traps are also introduced. These results were also confirmed by density functional theory (DFT) and the non-equilibrium Green’s function (NEGF) method calculations. Therefore, doping small size GNPs is favorable for trapping charge carriers and enhancing insulation ability, which is suggested as an effective strategy in exploring powerful insulation materials. PMID:28773802

Particle trap with dielectric barrier for use in gas insulated transmission lines

DOEpatents

Dale, Steinar J.

1982-01-01

A gas-insulated transmission line includes an outer sheath, an inner conductor within the outer sheath, insulating supports supporting the inner conductor within the outer sheath, and an insulating gas electrically insulating the inner conductor from the outer sheath. An apertured particle trapping electrode is disposed within the outer sheath, and the electrode has a pair of dielectric members secured at each longitudinal end thereof, with the dielectric members extending outwardly from the apertured electrode.

Electrothermal flow effects in insulating (electrodeless) dielectrophoresis systems.

PubMed

Hawkins, Benjamin G; Kirby, Brian J

2010-11-01

We simulate electrothermally induced flow in polymeric, insulator-based dielectrophoresis (iDEP) systems with DC-offset, AC electric fields at finite thermal Péclet number, and we identify key regimes where electrothermal (ET) effects enhance particle deflection and trapping. We study a single, two-dimensional constriction in channel depth with parametric variations in electric field, channel geometry, fluid conductivity, particle electrophoretic (EP) mobility, and channel electroosmotic (EO) mobility. We report the effects of increasing particle EP mobility, channel EO mobility, and AC and DC field magnitudes on the mean constriction temperature and particle behavior. Specifically, we quantify particle deflection and trapping, referring to the deviation of particles from their pathlines due to dielectrophoresis as they pass a constriction and the stagnation of particles due to negative dielectrophoresis near a constriction, respectively. This work includes the coupling between fluid, heat, and electromagnetic phenomena via temperature-dependent physical parameters. Results indicate that the temperature distribution depends strongly on the fluid conductivity and electric field magnitude, and particle deflection and trapping depend strongly on the channel geometry. Electrothermal (ET) effects perturb the EO flow field, creating vorticity near the channel constriction and enhancing the deflection and trapping effects. ET effects alter particle deflection and trapping responses in insulator-based dielectrophoresis devices, especially at intermediate device aspect ratios (2 ≤ r ≤ 7) in solutions of higher conductivity (σ m ≥ 1 × 10(-3)S/m). The impact of ET effects on particle deflection and trapping are diminished when particle EP mobility or channel EO mobility is high. In almost all cases, ET effects enhance negative dielectrophoretic particle deflection and trapping phenomena. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Trapping-charging ability and electrical properties study of amorphous insulator by dielectric spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mekni, Omar, E-mail: omarmekni-lmop@yahoo.fr; Arifa, Hakim; Askri, Besma

2014-09-14

Usually, the trapping phenomenon in insulating materials is studied by injecting charges using a Scanning Electron Microscope. In this work, we use the dielectric spectroscopy technique for showing a correlation between the dielectric properties and the trapping-charging ability of insulating materials. The evolution of the complex permittivity (real and imaginary parts) as a function of frequency and temperature reveals different types of relaxation according to the trapping ability of the material. We found that the space charge relaxation at low frequencies affects the real part of the complex permittivity ε{sup ´} and the dissipation factor Tan(δ). We prove that themore » evolution of the imaginary part of the complex permittivity against temperature ε{sup ′′}=f(T) reflects the phenomenon of charge trapping and detrapping as well as trapped charge evolution Q{sub p}(T). We also use the electric modulus formalism to better identify the space charge relaxation. The investigation of trapping or conductive nature of insulating materials was mainly made by studying the activation energy and conductivity. The conduction and trapping parameters are determined using the Correlated Barrier Hopping (CBH) model in order to confirm the relation between electrical properties and charge trapping ability.« less

Particle trap with dielectric barrier for use in gas insulated transmission lines

DOEpatents

Dale, S.J.

1982-06-15

A gas-insulated transmission line includes an outer sheath, an inner conductor within the outer sheath, insulating supports supporting the inner conductor within the outer sheath, and an insulating gas electrically insulating the inner conductor from the outer sheath. An apertured particle trapping electrode is disposed within the outer sheath, and the electrode has a pair of dielectric members secured at each longitudinal end thereof, with the dielectric members extending outwardly from the apertured electrode. 7 figs.

Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 Layers on Silicon

NASA Astrophysics Data System (ADS)

Wang, W. C.; Badylevich, M.; Adelmann, C.; Swerts, J.; Kittl, J. A.; Afanas'ev, V. V.

2012-12-01

The energy distribution of electron trap density in atomic layer deposited Al2O3, LaAl4Ox and GdyAl2-yO3 insulating layers was studied by using the exhaustive photodepopulation spectroscopy. Upon filling the traps by electron tunneling from Si substrate, a broad energy distribution of trap levels in the energy range 2-4 eV is found in all studied insulators with trap densities in the range of 1012 cm-2eV-1. The incorporation of La and Gd cations reduces the trap density in aluminate layers as compared to Al2O3. Crystallization of the insulator by the post-deposition annealing is found to increase the trap density while the energy distribution remains unchanged. The similar trap spectra in the Al2O3 and La or Gd aluminate layers suggest the common nature of the traps, probably originating from imperfections in the AlOx sub-network.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Charge Storage, Conductivity and Charge Profiles of Insulators as Related to Spacecraft Charging

NASA Technical Reports Server (NTRS)

Dennison, J. R.; Swaminathan, Prasanna; Frederickson, A. R.

2004-01-01

Dissipation of charges built up near the surface of insulators due to space environment interaction is central to understanding spacecraft charging. Conductivity of insulating materials is key to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. To understand these processes requires knowledge of how charge is deposited within the insulator, the mechanisms for charge trapping and charge transport within the insulator, and how the profile of trapped charge affects the transport and emission of charges from insulators. One must consider generation of mobile electrons and holes, their trapping, thermal de-trapping, mobility and recombination. Conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator, rather than by flow of current across two electrodes around the sample. We have found that conductivity determined from charge storage decay methods is 102 to 104 smaller than values obtained from classical ASTM and IEC methods for a variety of thin film insulating samples. For typical spacecraft charging conditions, classical conductivity predicts decay times on the order of minutes to hours (less than typical orbit periods); however, the higher charge storage conductivities predict decay times on the order of weeks to months leading to accumulation of charge with subsequent orbits. We found experimental evidence that penetration profiles of radiation and light are exceedingly important, and that internal electric fields due to charge profiles and high-field conduction by trapped electrons must be considered for space applications. We have also studied whether the decay constants depend on incident voltage and flux or on internal charge distributions and electric fields; light-activated discharge of surface charge to distinguish among differing charge trapping centers; and radiation-induced conductivity. Our experiments also show that "Malter" electron emission occurs for hours after turning off the electron beam. This Malter emission similar to emission due to negative electron affinity in semiconductors is a result of the prior radiation or optical excitations of valence electrons and their slow drift among traps towards the surface where they are subsequently emitted. This work is supported through funding from the NASA Space Environments and Effects Program.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

NASA Astrophysics Data System (ADS)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{supmore » 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.« less

Vacuum-insulated catalytic converter

DOEpatents

Benson, David K.

2001-01-01

A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

Double-trap model for hysteretic current-voltage characteristics of a polystyrene/ZnO nanorods stacked layer

NASA Astrophysics Data System (ADS)

Wu, You-Lin; Lin, Jing-Jenn; Lin, Shih-Hung; Sung, Yi-Hsing

2017-11-01

Hysteretic current-voltage (I-V) characteristics are quite common in metal-insulator-metal (MIM) devices used for resistive switching random access memory (RRAM). Two types of hysteretic I-V curves are usually observed, figure eight and counter figure eight (counter-clockwise and clockwise in the positive voltage sweep direction, respectively). In this work, a clockwise hysteretic I-V curve was found for an MIM device with polystyrene (PS)/ZnO nanorods stack as an insulator layer. Three distinct regions I ∼ V, I ∼ V2, and I ∼ V0.6 are observed in the double logarithmic plot of the I-V curves, which cannot be explained completely with the conventional trap-controlled space-charge-limited-current (SCLC) model. A model based on the energy band with two separate traps plus local energy variation and trap-controlled SCLC has been developed, which can successfully describe the behavior of the clockwise hysteretic I-V characteristics obtained in this work.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy

Using aluminum titanium oxide (AlTiO, an alloy of Al{sub 2}O{sub 3} and TiO{sub 2}) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ∼25 ms and ∼3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5–0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents aremore » analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.« less

Enhanced cell trapping throughput using DC-biased AC electric field in a dielectrophoresis-based fluidic device with densely packed silica beads.

PubMed

Lewpiriyawong, Nuttawut; Xu, Guolin; Yang, Chun

2018-03-01

This paper presents the use of DC-biased AC electric field for enhancing cell trapping throughput in an insulator-based dielectrophoretic (iDEP) fluidic device with densely packed silica beads. Cell suspension is carried through the iDEP device by a pressure-driven flow. Under an applied DC-biased AC electric field, DEP trapping force is produced as a result of non-uniform electric field induced by the gap of electrically insulating silica beads packed between two mesh electrodes that allow both fluid and cells to pass through. While the AC component is mainly to control the magnitude of DEP trapping force, the DC component generates local electroosmotic (EO) flow in the cavity between the beads and the EO flow can be set to move along or against the main pressure-driven flow. Our experimental and simulation results show that desirable trapping is achieved when the EO flow direction is along (not against) the main flow direction. Using our proposed DC-biased AC field, the device can enhance the trapping throughput (in terms of the flowrate of cell suspension) up to five times while yielding almost the same cell capture rates as compared to the pure AC field case. Additionally, the device was demonstrated to selectively trap dead yeast cells from a mixture of flowing live and dead yeast cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cold Weather and Cardiovascular Disease

MedlinePlus

... This traps air between layers, forming a protective insulation. Also, wear a hat or head scarf. Heat can be lost through your head. And ears ... which traps air between layers forming a protective insulation. Wear a hat because much of your body’s heat can be lost through your head. Learn CPR. ...

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Suppression of surface charge accumulation on Al{sub 2}O{sub 3}-filled epoxy resin insulator under dc voltage by direct fluorination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Boya; Zhang, Guixin, E-mail: guixin@mail.tsinghua.edu.cn; Li, Chuanyang

2015-12-15

Surface charge accumulation on insulators under high dc voltage is a major factor that may lead to the reduction of insulation levels in gas insulated devices. In this paper, disc insulators made of Al{sub 2}O{sub 3}-filled epoxy resin were surface fluorinated using a F{sub 2}/N{sub 2} mixture (12.5% F{sub 2}) at 50 °C and 0.1 MPa for different durations of 15 min, 30 min and 60 min. A dc voltage was applied to the insulator for 30 min and the charge density on its surface was measured by an electrostatic probe. The results revealed significant lower surface charge densities on themore » fluorinated insulators in comparison with the original one. Surface conductivity measurements indicated a higher surface conductivity by over three orders of magnitude after fluorination, which would allow the charges to transfer along the surface and thus may suppress their accumulation. Further, attenuated total reflection infrared analysis and surface morphology observations of the samples revealed that the introduction of fluoride groups altered the surface physicochemical properties. These structure changes, especially the physical defects reduced the depth of charge traps in the surface layer, which was verified by the measurement of energy distributions of the electron and hole traps based on the isothermal current theory. The results in this paper demonstrate that fluorination can be a promising and effective method to suppress surface charge accumulation on epoxy insulators in gas insulated devices.« less

The electro-mechanical effect from charge dynamics on polymeric insulation lifetime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alghamdi, H., E-mail: haalghamdi@nu.edu.sa; Faculty of Engineering, Najran University, Najran, P.O.Box 1988; Chen, G.

For polymeric material used as electrical insulation, the presence of space charges could be the consequence of material degradations that are thermally activated but increased by the application of an electric field. The dynamics of space charge, therefore, can be potentially used to characterize the material. In this direction, a new aging model in which parameters have clear physical meanings has been developed and applied to the material to extrapolate the lifetime. The kinetic equation has been established based on charge trapping and detrapping of the injected charge from the electrodes. The local electromechanical energy stored in the region surroundingmore » the trap is able to reduce the trap-depth with a value related to the electric field. At a level where the internal electric field exceeds the detrapping field in the material, an electron can be efficiently detrapped and the released energy from detrapping process can cause a weak bond or chain scission i.e. material degradation. The model has been applied to the electro-thermally aged low density polyethylene film samples, showing well fitted result, as well as interesting relationships between parameter estimates and insulation morphology.« less

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiskumara, R.; Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.

A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted upmore » to applied fields as high as ∼275 kV/cm.« less

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Experimental Study on Influence of Trap Parameters on Dielectric Characteristics of Nano-Modified Insulation Pressboard

PubMed Central

Chen, Qingguo; Liu, Heqian; Chi, Minghe; Wang, Yonghong; Wei, Xinlao

2017-01-01

In order to study the influence of trap parameters on dielectric characteristics of nano-modified pressboards, pressboards were made using the nano doping method with different nanoparticle components. The dielectric characteristics of the modified pressboards were measured, and the trap parameters were investigated using the thermally stimulated current (TSC) method. The test results indicated that the conductivity initially declined and then rose with the increase of nano-Al2O3 content, whereas it solely rose with the increase of nano-SiC content. Moreover, the conductivity exhibited nonlinear characteristics with the enhancement of electric field stress at high nanoparticle content. The relative permittivity of modified pressboard declines initially and then rises with the increase of nanoparticle content. In addition, the breakdown strength of modified pressboards exhibited a pattern of incline followed by decline with the increase of nano-Al2O3 content, while it always declined with the increase of nano-SiC content. The analysis based on the energy band theory on trap parameters of the constructed multi-core model concludes that the nanoparticle components added in pressboard altered both the depth and density of traps. It is therefore concluded that trap parameters have significant influence on the dielectric characteristics of nano-modified insulation pressboard. PMID:28772448

Experimental Study on Influence of Trap Parameters on Dielectric Characteristics of Nano-Modified Insulation Pressboard.

PubMed

Chen, Qingguo; Liu, Heqian; Chi, Minghe; Wang, Yonghong; Wei, Xinlao

2017-01-22

In order to study the influence of trap parameters on dielectric characteristics of nano-modified pressboards, pressboards were made using the nano doping method with different nanoparticle components. The dielectric characteristics of the modified pressboards were measured, and the trap parameters were investigated using the thermally stimulated current (TSC) method. The test results indicated that the conductivity initially declined and then rose with the increase of nano-Al₂O₃ content, whereas it solely rose with the increase of nano-SiC content. Moreover, the conductivity exhibited nonlinear characteristics with the enhancement of electric field stress at high nanoparticle content. The relative permittivity of modified pressboard declines initially and then rises with the increase of nanoparticle content. In addition, the breakdown strength of modified pressboards exhibited a pattern of incline followed by decline with the increase of nano-Al₂O₃ content, while it always declined with the increase of nano-SiC content. The analysis based on the energy band theory on trap parameters of the constructed multi-core model concludes that the nanoparticle components added in pressboard altered both the depth and density of traps. It is therefore concluded that trap parameters have significant influence on the dielectric characteristics of nano-modified insulation pressboard.

Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

NASA Astrophysics Data System (ADS)

Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

2018-02-01

We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

Isothermal relaxation current and microstructure changes of thermally aged polyester films impregnated by epoxy resin

NASA Astrophysics Data System (ADS)

Jiang, Xiongwei; Sun, Potao; Peng, Qingjun; Sima, Wenxia

2018-01-01

In this study, to understand the effect of thermal aging on polymer films degradation, specimens of polyester films impregnated by epoxy resin with different thermal aging temperatures (80 and 130 °C) and aging times (500, 1600, 2400 and 3000 h) are prepared, then charge de-trapping properties of specimens are investigated via the isothermal relaxation current (IRC) measurement, the distributions of trap level and its corresponding density are obtained based on the modified IRC model. It is found that the deep trap density increases remarkably at the beginning of thermal aging (before 1600 h), but it decreases obviously as the aging degree increases. At elevated aging temperature and, in particular considering the presence of air gap between two-layer insulation, the peak densities of deep traps decrease more significant in the late period of aging. It can be concluded that it is the released energy from de-trapping process leads to the fast degradation of insulation. Moreover, after thermal aging, the microstructure changes of crystallinity and molecular structures are analyzed via the x-ray diffraction experiment and Fourier transform infrared spectrometer. The results indicate that the variation of the deep trap density is closely linked with the changes of microstructure, a larger interface of crystalline/amorphous phase, more defects and broken chains caused by thermal aging form higher deep trap density stored in the samples.

Joule heating effects on particle immobilization in insulator-based dielectrophoretic devices.

PubMed

Gallo-Villanueva, Roberto C; Sano, Michael B; Lapizco-Encinas, Blanca H; Davalos, Rafael V

2014-02-01

In this work, the temperature effects due to Joule heating obtained by application of a direct current electric potential were investigated for a microchannel with cylindrical insulating posts employed for insulator-based dielectrophoresis. The conductivity of the suspending medium, the local electric field, and the gradient of the squared electric field, which directly affect the magnitude of the dielectrophoretic force exerted on particles, were computationally simulated employing COMSOL Multiphysics. It was observed that a temperature gradient is formed along the microchannel, which redistributes the conductivity of the suspending medium leading to an increase of the dielectrophoretic force toward the inlet of the channel while decreasing toward the outlet. Experimental results are in good agreement with simulations on the particle-trapping zones anticipated. This study demonstrates the importance of considering Joule heating effects when designing insulator-based dielectrophoresis systems. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

10 CFR Appendix A to Part 440 - Standards for Weatherization Materials

Code of Federal Regulations, 2014 CFR

2014-01-01

...] Insulate tank and distribution piping (See insulation section of this appendix). Install heat traps on..., Ceilings, Attics, and Roofs Insulation—organic fiber—conformance to Interim Safety Standard in 16 CFR part 1209; Fire Safety Requirements for Thermal Insulating Materials According to Insulation Use—Attic Floor...

10 CFR Appendix A to Part 440 - Standards for Weatherization Materials

Code of Federal Regulations, 2011 CFR

2011-01-01

...] Insulate tank and distribution piping (See insulation section of this appendix). Install heat traps on..., Ceilings, Attics, and Roofs Insulation—organic fiber—conformance to Interim Safety Standard in 16 CFR part 1209; Fire Safety Requirements for Thermal Insulating Materials According to Insulation Use—Attic Floor...

10 CFR Appendix A to Part 440 - Standards for Weatherization Materials

Code of Federal Regulations, 2013 CFR

2013-01-01

...] Insulate tank and distribution piping (See insulation section of this appendix). Install heat traps on..., Ceilings, Attics, and Roofs Insulation—organic fiber—conformance to Interim Safety Standard in 16 CFR part 1209; Fire Safety Requirements for Thermal Insulating Materials According to Insulation Use—Attic Floor...

10 CFR Appendix A to Part 440 - Standards for Weatherization Materials

Code of Federal Regulations, 2012 CFR

2012-01-01

...] Insulate tank and distribution piping (See insulation section of this appendix). Install heat traps on..., Ceilings, Attics, and Roofs Insulation—organic fiber—conformance to Interim Safety Standard in 16 CFR part 1209; Fire Safety Requirements for Thermal Insulating Materials According to Insulation Use—Attic Floor...

Quantitative evaluation of spatial scale of carrier trapping at grain boundary by GHz-microwave dielectric loss spectroscopy

NASA Astrophysics Data System (ADS)

Choi, W.; Tsutsui, Y.; Miyakai, T.; Sakurai, T.; Seki, S.

2017-11-01

Charge carrier mobility is an important primary parameter for the electronic conductive materials, and the intrinsic limit of the mobility has been hardly access by conventional direct-current evaluation methods. In the present study, intra-grain hole mobility of pentacene thin films was estimated quantitatively using microwave-based dielectric loss spectroscopy (time-resolved microwave conductivity measurement) in alternating current mode of charge carrier local motion. Metal-insulator-semiconductor devices were prepared with different insulating polymers or substrate temperature upon vacuum deposition of the pentacene layer, which afforded totally four different grain-size conditions of pentacene layers. Under the condition where the local motion was determined by interfacial traps at the pentacene grain boundaries (grain-grain interfaces), the observed hole mobilities were plotted against the grain sizes, giving an excellent correlation fit successfully by a parabolic function representative of the boarder length. Consequently, the intra-grain mobility and trap-release time of holes were estimated as 15 cm2 V-1 s-1 and 9.4 ps.

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Electrothermal enrichment of submicron particles in an insulator-based dielectrophoretic microdevice.

PubMed

Kale, Akshay; Song, Le; Lu, Xinyu; Yu, Liandong; Hu, Guoqing; Xuan, Xiangchun

2018-03-01

Insulator-based dielectrophoresis (iDEP) exploits in-channel hurdles and posts etc. to create electric field gradients for various particle manipulations. However, the presence of such insulating structures also amplifies the Joule heating in the fluid around themselves, leading to both temperature gradients and electrothermal flow. These Joule heating effects have been previously demonstrated to weaken the dielectrophoretic focusing and trapping of microscale and nanoscale particles. We find that the electrothermal flow vortices are able to entrain submicron particles for a localized enrichment near the insulating tips of a ratchet microchannel. This increase in particle concentration is reasonably predicted by a full-scale numerical simulation of the mass transport along with the coupled charge, heat and fluid transport. Our model also predicts the electric current and flow pattern in the fluid with a good agreement with the experimental observations. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

System for particle concentration and detection

DOEpatents

Morales, Alfredo M.; Whaley, Josh A.; Zimmerman, Mark D.; Renzi, Ronald F.; Tran, Huu M.; Maurer, Scott M.; Munslow, William D.

2013-03-19

A new microfluidic system comprising an automated prototype insulator-based dielectrophoresis (iDEP) triggering microfluidic device for pathogen monitoring that can eventually be run outside the laboratory in a real world environment has been used to demonstrate the feasibility of automated trapping and detection of particles. The system broadly comprised an aerosol collector for collecting air-borne particles, an iDEP chip within which to temporarily trap the collected particles and a laser and fluorescence detector with which to induce a fluorescence signal and detect a change in that signal as particles are trapped within the iDEP chip.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Transitioning Streaming to Trapping in DC Insulator-based Dielectrophoresis for Biomolecules

PubMed Central

Camacho-Alanis, Fernanda; Gan, Lin; Ros, Alexandra

2012-01-01

Exploiting dielectrophoresis (DEP) to concentrate and separate biomolecules has recently shown large potential as a microscale bioanalytical tool. Such efforts however require tailored devices and knowledge of all interplaying transport mechanisms competing with dielectrophoresis (DEP). Specifically, a strong DEP contribution to the overall transport mechanism is necessary to exploit DEP of biomolecules for analytical applications such as separation and fractionation. Here, we present improved microfluidic devices combining optical lithography and focused ion beam milling (FIBM) for the manipulation of DNA and proteins using insulator-based dielectrophoresis (iDEP) and direct current (DC) electric fields. Experiments were performed on an elastomer platform forming the iDEP microfluidic device with integrated nanoposts and nanopost arrays. Microscale and nanoscale iDEP was studied for λ-DNA (48.5 kbp) and the protein bovine serum albumin (BSA). Numerical simulations were adapted to the various tested geometries revealing excellent qualitative agreement with experimental observations for streaming and trapping DEP. Both the experimental and simulation results indicate that DC iDEP trapping for λ-DNA occurs with tailored nanoposts fabricated via FIBM. Moreover, streaming iDEP concentration of BSA is improved with integrated nanopost arrays by a factor of 45 compared to microfabricated arrays. PMID:23441049

Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction

NASA Astrophysics Data System (ADS)

Shin, Ik-Soo; Kim, Jung-Min; Jeun, Jun-Ho; Yoo, Seok-Hyun; Ge, Ziyi; Hong, Jong-In; Ho Bang, Jin; Kim, Yong-Sang

2012-04-01

An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory.

Dielectrophoretic trapping of multilayer DNA origami nanostructures and DNA origami-induced local destruction of silicon dioxide.

PubMed

Shen, Boxuan; Linko, Veikko; Dietz, Hendrik; Toppari, J Jussi

2015-01-01

DNA origami is a widely used method for fabrication of custom-shaped nanostructures. However, to utilize such structures, one needs to controllably position them on nanoscale. Here we demonstrate how different types of 3D scaffolded multilayer origamis can be accurately anchored to lithographically fabricated nanoelectrodes on a silicon dioxide substrate by DEP. Straight brick-like origami structures, constructed both in square (SQL) and honeycomb lattices, as well as curved "C"-shaped and angular "L"-shaped origamis were trapped with nanoscale precision and single-structure accuracy. We show that the positioning and immobilization of all these structures can be realized with or without thiol-linkers. In general, structural deformations of the origami during the DEP trapping are highly dependent on the shape and the construction of the structure. The SQL brick turned out to be the most robust structure under the high DEP forces, and accordingly, its single-structure trapping yield was also highest. In addition, the electrical conductivity of single immobilized plain brick-like structures was characterized. The electrical measurements revealed that the conductivity is negligible (insulating behavior). However, we observed that the trapping process of the SQL brick equipped with thiol-linkers tended to induce an etched "nanocanyon" in the silicon dioxide substrate. The nanocanyon was formed exactly between the electrodes, that is, at the location of the DEP-trapped origami. The results show that the demonstrated DEP-trapping technique can be readily exploited in assembling and arranging complex multilayered origami geometries. In addition, DNA origamis could be utilized in DEP-assisted deformation of the substrates onto which they are attached. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Repairing Nanoparticle Surface Defects.

PubMed

Marino, Emanuele; Kodger, Thomas E; Crisp, Ryan W; Timmerman, Dolf; MacArthur, Katherine E; Heggen, Marc; Schall, Peter

2017-10-23

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

High-Rate Assembly of Nanomaterials on Insulating Surfaces Using Electro-Fluidic Directed Assembly.

PubMed

Yilmaz, Cihan; Sirman, Asli; Halder, Aditi; Busnaina, Ahmed

2017-08-22

Conductive or semiconducting nanomaterials-based applications such as electronics and sensors often require direct placement of such nanomaterials on insulating surfaces. Most fluidic-based directed assembly techniques on insulating surfaces utilize capillary force and evaporation but are diffusion limited and slow. Electrophoretic-based assembly, on the other hand, is fast but can only be utilized for assembly on a conductive surface. Here, we present a directed assembly technique that enables rapid assembly of nanomaterials on insulating surfaces. The approach leverages and combines fluidic and electrophoretic assembly by applying the electric field through an insulating surface via a conductive film underneath. The approach (called electro-fluidic) yields an assembly process that is 2 orders of magnitude faster compared to fluidic assembly. By understanding the forces on the assembly process, we have demonstrated the controlled assembly of various types of nanomaterials that are conducting, semiconducting, and insulating including nanoparticles and single-walled carbon nanotubes on insulating rigid and flexible substrates. The presented approach shows great promise for making practical devices in miniaturized sensors and flexible electronics.

Frostbite

MedlinePlus

... trapped between the layers of clothing acts as insulation against the cold. Wear windproof and waterproof outer ... liners that fit well, wick moisture and provide insulation. You might also try hand and foot warmers. ...

PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction

PubMed Central

Cheng, Baochang; Zhao, Jie; Xiao, Li; Cai, Qiangsheng; Guo, Rui; Xiao, Yanhe; Lei, Shuijin

2015-01-01

Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulting in a typical bipolar RS behavior. We propose the mechanism of nanostructure trap-induced space charge polarization modulated by PMMA interlayer. At low reverse bias, PMMA insulator can block charges through the heterointerface, and and trapped states are respectively created on both sides of PMMA, resulting in a high resistance state (HRS) due to wider depletion region. At high reverse bias, however, electrons and holes can cross PMMA interlayer by Fowler-Nordeim tunneling due to a massive tilt of energy band, and then inject into the traps of ZnO and CuSCN, respectively. and trapped states are created, resulting in the formation of degenerate semiconductors on both sides of PMMA. Therefore, quantum tunneling and space charge polarization lead to a low resistance state (LRS). At relatively high forward bias, subsequently, the trapped states of and are recreated due to the opposite injection of charges, resulting in a recovery of HRS. The introduction of insulating interlayer at heterointerface, point a way to develop next-generation nonvolatile memories. PMID:26648249

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Single-Walled Carbon Nanotubes Probed with Insulator-Based Dielectrophoresis

PubMed Central

2017-01-01

Single-walled carbon nanotubes (SWNTs) offer unique electrical and optical properties. Common synthesis processes yield SWNTs with large length polydispersity (several tens of nanometers up to centimeters) and heterogeneous electrical and optical properties. Applications often require suitable selection and purification. Dielectrophoresis is one manipulation method for separating SWNTs based on dielectric properties and geometry. Here, we present a study of surfactant and single-stranded DNA-wrapped SWNTs suspended in aqueous solutions manipulated by insulator-based dielectrophoresis (iDEP). This method allows us to manipulate SWNTs with the help of arrays of insulating posts in a microfluidic device around which electric field gradients are created by the application of an electric potential to the extremities of the device. Semiconducting SWNTs were imaged during dielectrophoretic manipulation with fluorescence microscopy making use of their fluorescence emission in the near IR. We demonstrate SWNT trapping at low-frequency alternating current (AC) electric fields with applied potentials not exceeding 1000 V. Interestingly, suspended SWNTs showed both positive and negative dielectrophoresis, which we attribute to their ζ potential and the suspension properties. Such behavior agrees with common theoretical models for nanoparticle dielectrophoresis. We further show that the measured ζ potentials and suspension properties are in excellent agreement with a numerical model predicting the trapping locations in the iDEP device. This study is fundamental for the future application of low-frequency AC iDEP for technological applications of SWNTs. PMID:29131586

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

NASA Astrophysics Data System (ADS)

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

2015-02-01

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.

Joule heating effects on particle immobilization in insulator-based dielectrophoretic devices

PubMed Central

Gallo-Villanueva, Roberto C.; Sano, Michael B.; Lapizco-Encinas, Blanca H.; Davalos, Rafael V.

2014-01-01

In this work, the temperature effects due to Joule heating obtained by application of a DC electric potential were investigated for a microchannel with cylindrical insulating posts employed for insulator based dielectrophoresis (iDEP). The conductivity of the suspending medium, the local electric field, and the gradient of the squared electric field, which directly affect the magnitude of the dielectrophoretic force exerted on particles, were computationally simulated employing COMSOL Multiphysics. It was observed that a temperature gradient is formed along the microchannel which redistributes the conductivity of the suspending medium leading to an increase of the dielectrophoretic force towards the inlet of the channel while decreasing towards the outlet. Experimental results are in good agreement with simulations on the particle trapping zones anticipated. This study demonstrates the importance of considering Joule heating effects when designing iDEP systems. PMID:24002905

Multi-stage separations based on dielectrophoresis

DOEpatents

Mariella, Jr., Raymond P.

2004-07-13

A system utilizing multi-stage traps based on dielectrophoresis. Traps with electrodes arranged transverse to the flow and traps with electrodes arranged parallel to the flow with combinations of direct current and alternating voltage are used to trap, concentrate, separate, and/or purify target particles.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Cooling a band insulator with a metal: fermionic superfluid in a dimerized holographic lattice.

PubMed

Haldar, Arijit; Shenoy, Vijay B

2014-10-17

A cold atomic realization of a quantum correlated state of many fermions on a lattice, eg. superfluid, has eluded experimental realization due to the entropy problem. Here we propose a route to realize such a state using holographic lattice and confining potentials. The potentials are designed to produces a band insulating state (low heat capacity) at the trap center, and a metallic state (high heat capacity) at the periphery. The metal "cools" the central band insulator by extracting out the excess entropy. The central band insulator can be turned into a superfluid by tuning an attractive interaction between the fermions. Crucially, the holographic lattice allows the emergent superfluid to have a high transition temperature - even twice that of the effective trap temperature. The scheme provides a promising route to a laboratory realization of a fermionic lattice superfluid, even while being adaptable to simulate other many body states.

Particle trap for compressed gas insulated transmission systems

DOEpatents

Cookson, A.H.

1984-04-26

A particle trap is provided for gas insulated transmission lines having a central high voltage conductor supported within an outer coaxial conductive sheath by a dielectric support member. A cavity between the inner conductor and outer sheath is filled with a dielectric insulating gas. A cone-like particle deflector, mounted to the inner conductor, deflects moving particles away from the support member, to radially outer portions of the cavity. A conductive shield is disposed adjacent the outer sheath to form a field-free region in radially outer portions of the cavity, between the shield and the sheath. Particles traveling along the cavity are deflected by the cone-like deflector into the field-free region where they are held immobile. In a vertical embodiment, particles enter the field-free region through an upper end of a gap formed between shield and sheath members. In a horizontal embodiment, the deflector cone has a base which is terminated radially internally of the shield. Apertures in the shield located adjacent the deflector allow passage of deflected particles into the field-free region. The dielectric support member is thereby protected from contaminating particles that may otherwise come to rest thereon.

Particle trap for compressed gas insulated transmission systems

DOEpatents

Cookson, Alan H.

1985-01-01

A particle trap is provided for gas insulated transmission lines having a central high voltage conductor supported within an outer coaxial conductive sheath by a dielectric support member. A cavity between the inner conductor and outer sheath is filled with a dielectric insulating gas. A cone-like particle deflector, mounted to the inner conductor, deflects moving particles away from the support member, to radially outer portions of the cavity. A conductive shield is disposed adjacent the outer sheath to form a field-free region in radially outer portions of the cavity, between the shield and the sheath. Particles traveling along the cavity are deflected by the cone-like deflector into the field-free region where they are held immobile. In a vertical embodiment, particles enter the field-free region through an upper end of a gap formed between shield and sheath members. In a horizontal embodiment, the deflector cone has a base which is terminated radially internally of the shield. Apertures in the shield located adjacent the deflector allow passage of deflected particles into the field-free region. The dielectric support member is thereby protected from contaminating particles that may otherwise come to rest thereon.

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Mingda; Song, Qichen; Zhao, Weiwei

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE PAGES

Li, Mingda; Song, Qichen; Zhao, Weiwei; ...

2017-11-01

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Contaminant trap for gas-insulated apparatus

DOEpatents

Adcock, James L.; Pace, Marshall O.; Christophorou, Loucas G.

1984-01-01

A contaminant trap for a gas-insulated electrical conductor is provided. A resinous dielectric body such as Kel-F wax, grease or other sticky polymeric or oligomeric compound is disposed on the inside wall of the outer housing for the conductor. The resinous body is sufficiently sticky at ambient temperatures to immobilize contaminant particles in the insulating gas on the exposed surfaces thereof. An electric resistance heating element is disposed in the resinous body to selectively raise the temperature of the resinous body to a molten state so that the contaminant particles collected on the surface of the body sink into the body so that the surface of the resinous body is renewed to a particle-less condition and, when cooled, returns to a sticky collecting surface.

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

2017-01-01

In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). PMID:28773101

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

2017-07-03

In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W).

Comparison of reusable insulation systems for cryogenically-tanked earth-based space vehicles

NASA Technical Reports Server (NTRS)

Sumner, I. E.; Barber, J. R.

1978-01-01

Three reusable insulation systems concepts have been developed for use with cryogenic tanks of earth-based space vehicles. Two concepts utilized double-goldized Kapton (DGK) or double-aluminized Mylar (DAM) multilayer insulation (MLI), while the third utilized a hollow-glass-microsphere, load-bearing insulation (LBI). All three insulation systems have recently undergone experimental testing and evaluation under NASA-sponsored programs. Thermal performance measurements were made under space-hold (vacuum) conditions for insulation warm boundary temperatures of approximately 291 K. The resulting effective thermal conductivity was approximately .00008 W/m-K for the MLI systems (liquid hydrogen test results) and .00054 W/m-K for the LBI system (liquid nitrogen test results corrected to liquid hydrogen temperature). The DGK MLI system experienced a maximum thermal degradation of 38 percent, the DAM MLI system 14 percent, and the LBI system 6.7 percent due to repeated thermal cycling representing typical space flight conditions. Repeated exposure of the DAM MLI system to a high humidity environment for periods as long as 8 weeks provided a maximum degradation of only 24 percent.

Silicon insulator-based dielectrophoresis devices for minimized heating effects.

PubMed

Zellner, Phillip; Agah, Masoud

2012-08-01

Concentration of biological specimens that are extremely dilute in a solution is of paramount importance for their detection. Microfluidic chips based on insulator-based DEP (iDEP) have been used to selectively concentrate bacteria and viruses. iDEP biochips are currently fabricated with glass or polymer substrates to allow for high electric fields within the channels. Joule heating is a well-known problem in these substrates and can lead to decreased throughput and even device failure. In this work, we present, for the first time, highly efficient trapping and separation of particles in DC iDEP devices that are fabricated on silicon using a single-etch-step three-dimensional microfabrication process with greatly improved heat dissipation properties. Fabrication in silicon allows for greater heat dissipation for identical geometries and operating conditions. The 3D fabrication allows for higher performance at lower applied potentials. Thermal measurements were performed on both the presented silicon chips and previously published PDMS devices comprised of microposts. Trapping and separation of 1 and 2 μm polystyrene particles was demonstrated. These results demonstrate the feasibility of high-performance silicon iDEP devices for the next generation of sorting and concentration microsystems. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories

PubMed Central

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-01-01

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories. PMID:29518054

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

PubMed

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-03-08

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

The effects of shallow traps on the positive streamer electrodynamics in transformer oil based nanofluids

NASA Astrophysics Data System (ADS)

Zhou, You; Sui, Sanyi; Li, Jie; Ouyang, Zigui; Lv, Yuzhen; Li, Chengrong; Lu, Wu

2018-03-01

Nanotechnology provides a new way to improve the insulating properties of traditional dielectric materials. In this study, three types of mineral oil based nanofluids were prepared by suspending Fe3O4, TiO2 and Al2O3 nanoparticles all of which were surface modified by oleic acid. The inception voltage, stopping length and propagating velocity of streamers in the nanofluids under positive lightning impulse voltage were experimentally studied. It is found that nanoparticles can restrain the initiation and propagation processes of positive streamers in transformer oil depending on the types of nanoparticles. In addition, the trap characteristics in pure oil and nanofluids were comparably studied. The relationship between the trap characteristics and mobility of charge carriers in oil samples were then established. The increased trap density in nanofluids diffuses kinetic energy of ionized electrons and converts them into negative ions, resulting in the reduced electrical field strength in front of positive streamer and increased breakdown strength of nanofluids.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Localized Electron Trap Modification as a Result of Space Weather Exposure in Highly Disordered Insulating Materials

DTIC Science & Technology

2017-03-06

4 Pre-transit discharge region (phase II) ........................................................................... 5 Post...transit Discharge Region (phase III) ...................................................................... 5 2.2. Optical Signature...3 Figure 2 Schematic of a charge/ discharge curve of an electron irradiated insulating material. .. 4

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE PAGES

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

2018-03-13

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Low-cost insulation system for cryostats eliminates need for a vacuum

NASA Technical Reports Server (NTRS)

Calvert, H. F.

1964-01-01

In order to eliminate the hazard caused by residual air trapped between the concentric shells of a cryostat, these annular spaces are pressurized with helium gas. This system is more economical than the use of powdered insulation maintained at low vacuums.

Microscale ion trap mass spectrometer

DOEpatents

Ramsey, J. Michael; Witten, William B.; Kornienko, Oleg

2002-01-01

An ion trap for mass spectrometric chemical analysis of ions is delineated. The ion trap includes a central electrode having an aperture; a pair of insulators, each having an aperture; a pair of end cap electrodes, each having an aperture; a first electronic signal source coupled to the central electrode; a second electronic signal source coupled to the end cap electrodes. The central electrode, insulators, and end cap electrodes are united in a sandwich construction where their respective apertures are coaxially aligned and symmetric about an axis to form a partially enclosed cavity having an effective radius r.sub.0 and an effective length 2z.sub.0, wherein r.sub.0 and/or z.sub.0 are less than 1.0 mm, and a ratio z.sub.0 /r.sub.0 is greater than 0.83.

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Scaling down constriction-based (electrodeless) dielectrophoresis devices for trapping nanoscale bioparticles in physiological media of high-conductivity.

PubMed

Chaurey, Vasudha; Rohani, Ali; Su, Yi-Hsuan; Liao, Kuo-Tang; Chou, Chia-Fu; Swami, Nathan S

2013-04-01

Selective trapping of nanoscale bioparticles (size <100 nm) is significant for the separation and high-sensitivity detection of biomarkers. Dielectrophoresis is capable of highly selective trapping of bioparticles based on their characteristic frequency response. However, the trapping forces fall steeply with particle size, especially within physiological media of high-conductivity where the trapping can be dissipated by electrothermal (ET) flow due to localized Joule heating. Herein, we investigate the influence of device scaling within the electrodeless insulator dielectrophoresis geometry through the application of highly constricted channels of successively smaller channel depth, on the net balance of dielectrophoretic trapping force versus ET drag force on bioparticles. While higher degrees of constriction enable dielectrophoretic trapping of successively smaller bioparticles within a short time, the ETflow due to enhanced Joule heating within media of high conductivity can cause a significant dissipation of bioparticle trapping. This dissipative drag force can be reduced through lowering the depth of the highly constricted channels to submicron sizes, which substantially reduces the degree of Joule heating, thereby enhancing the range of voltages and media conductivities that can be applied toward rapid dielectrophoretic concentration enrichment of silica nanoparticles (∼50 nm) and streptavidin protein biomolecules (∼5 nm). We envision the application of these methodologies toward nanofabrication, optofluidics, biomarker discovery, and early disease diagnostics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymeric and Molecular Materials for Advanced Organic Electronics

DTIC Science & Technology

2011-07-25

printable variants. All have excellent dielectric and insulating properties, a remarkable ability to minimize trapped charge between thin film transistor... trapped charge density, and hence the corresponding OTFT device performance. Under this program we first discovered that OTFT performance is...deep, high- density charge traps must be overcome for efficient FET operation, it has been postulated that in most OFETs, shallow lower-density (~10

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

NASA Astrophysics Data System (ADS)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

2017-08-01

Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

NASA Astrophysics Data System (ADS)

Kim, Won-Ho; Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk; Zhang, Xue; Park, Jaehoon

2014-09-01

Organic ferroelectric capacitors were fabricated using pentacene and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDF-TrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

TiO2 nanoparticle induced space charge decay in thermal aged transformer oil

NASA Astrophysics Data System (ADS)

Lv, Yuzhen; Du, Yuefan; Li, Chengrong; Qi, Bo; Zhong, Yuxiang; Chen, Mutian

2013-04-01

TiO2 nanoparticle with good dispersibility and stability in transformer oil was prepared and used to modify insulating property of aged oil. It was found that space charge decay rate in the modified aged oil can be significantly enhanced to 1.57 times of that in the aged oil at first 8 s after polarization voltage was removed. The results of trap characteristics reveal that the modification of nanoparticle can not only greatly lower the shallow trap energy level in the aged oil but also increase the trap density, resulting in improved charge transportation via trapping and de-trapping process in shallower traps.

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Colon, Albert; Stan, Liliana; Divan, Ralu

Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approachmore » this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices.« less

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

NASA Astrophysics Data System (ADS)

Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

2015-10-01

Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Fabrication of solid-state secondary battery using semiconductors and evaluation of its charge/discharge characteristics

NASA Astrophysics Data System (ADS)

Sasaki, Atsuya; Sasaki, Akito; Hirabayashi, Hideaki; Saito, Shuichi; Aoki, Katsuaki; Kataoka, Yoshinori; Suzuki, Koji; Yabuhara, Hidehiko; Ito, Takahiro; Takagi, Shigeyuki

2018-04-01

Li-ion batteries have attracted interest for use as storage batteries. However, the risk of fire has not yet been resolved. Although solid Li-ion batteries are possible alternatives, their performance characteristics are unsatisfactory. Recently, research on utilizing the accumulation of carriers at the trap levels of semiconductors has been performed. However, the detailed charge/discharge characteristics and principles have not been reported. In this report, we attempted to form new n-type oxide semiconductor/insulator/p-type oxide semiconductor structures. The battery characteristics of these structures were evaluated by charge/discharge measurements. The obtained results clearly indicated the characteristics of rechargeable batteries. Furthermore, the fabricated structure accumulated an approximately 5000 times larger number of carriers than a parallel plate capacitor. Additionally, by constructing circuit models based on the experimental results, the charge/discharge mechanisms were considered. This is the first detailed experimental report on a rechargeable battery that operates without the double injection of ions and electrons.

Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

NASA Astrophysics Data System (ADS)

Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

2015-08-01

We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

NASA Astrophysics Data System (ADS)

Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

2008-03-01

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Equilibration dynamics of a many-body quantum system across the superfluid to Mott insulator phase transition

NASA Astrophysics Data System (ADS)

Mullers, Andreas; Baals, Christian; Santra, Bodhaditya; Labouvie, Ralf; Mertz, Thomas; Dhar, Arya; Vasic, Ivana; Cichy, Agnieszka; Hofstetter, Walter; Ott, Herwig

2017-04-01

We report on the center-of-mass motion of ultracold 87Rb atoms on displacing an underlying potential. The atoms are adiabatically loaded into an optical lattice superimposed onto an optical dipole trap. The CO2 laser beam forming the dipole trap is then shifted by 1 μm which forces the system out of equilibrium. The subsequent motion of the atoms center-of mass is imaged with a scanning electron microscope for various depths of the optical lattice spanning the superfluid to Mott-insulator phase transition. The observed dynamics range from fast oscillations in the superfluid regime to a steady exponential movement towards the new equilibrium position for higher lattice depths. By piecewise analysis of the system, we can also identify a thermal phase at the edges which moves with velocities in between those of the superfluid and the insulating phase. We will present the experiment and the results of theoretical modelling currently in progress.

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

2017-06-01

This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

The Role of Interfaces in Polyethylene/Metal-Oxide Nanocomposites for Ultrahigh-Voltage Insulating Materials.

PubMed

Pourrahimi, Amir Masoud; Olsson, Richard T; Hedenqvist, Mikael S

2018-01-01

Recent progress in the development of polyethylene/metal-oxide nanocomposites for extruded high-voltage direct-current (HVDC) cables with ultrahigh electric insulation properties is presented. This is a promising technology with the potential of raising the upper voltage limit in today's underground/submarine cables, based on pristine polyethylene, to levels where the loss of energy during electric power transmission becomes low enough to ensure intercontinental electric power transmission. The development of HVDC insulating materials together with the impact of the interface between the particles and the polymer on the nanocomposites electric properties are shown. Important parameters from the atomic to the microlevel, such as interfacial chemistry, interfacial area, and degree of particle dispersion/aggregation, are discussed. This work is placed in perspective with important work by others, and suggested mechanisms for improved insulation using nanoparticles, such as increased charge trap density, adsorption of impurities/ions, and induced particle dipole moments are considered. The effects of the nanoparticles and of their interfacial structures on the mechanical properties and the implications of cavitation on the electric properties are also discussed. Although the main interest in improving the properties of insulating polymers has been on the use of nanoparticles, leading to nanodielectrics, it is pointed out here that larger microscopic hierarchical metal-oxide particles with high surface porosity also impart good insulation properties. The impact of the type of particle and its inherent properties (purity and conductivity) on the nanocomposite dielectric and insulating properties are also discussed based on data obtained by a newly developed technique to directly observe the charge distribution on a nanometer scale in the nanocomposite. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum Mechanics in Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeppli, G.; Department of Physics and Astronomy, University College of London, London

Atomic physics is undergoing a large revival because of the possibility of trapping and cooling ions and atoms both for individual quantum control as well as collective quantum states, such as Bose-Einstein condensates. The present lectures start from the 'atomic' physics of isolated atoms in semiconductors and insulators and proceed to coupling them together to yield magnets undergoing quantum phase transitions as well as displaying novel quantum states with no classical analogs. The lectures are based on: G.-Y. Xu et al., Science 317, 1049-1052 (2007); G. Aeppli, P. Warburton, C. Renner, BT Technology Journal, 24, 163-169 (2006); H. M. Ronnowmore » et al., Science 308, 392-395 (2005) and N. Q. Vinh et al., PNAS 105, 10649-10653 (2008).« less

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Anomalous Quasiparticle Symmetries and Non-Abelian Defects on Symmetrically Gapped Surfaces of Weak Topological Insulators.

PubMed

Mross, David F; Essin, Andrew; Alicea, Jason; Stern, Ady

2016-01-22

We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z_{4} parafermion zero modes.

Optically Transparent Thermally Insulating Silica Aerogels for Solar Thermal Insulation.

PubMed

Günay, A Alperen; Kim, Hannah; Nagarajan, Naveen; Lopez, Mateusz; Kantharaj, Rajath; Alsaati, Albraa; Marconnet, Amy; Lenert, Andrej; Miljkovic, Nenad

2018-04-18

Rooftop solar thermal collectors have the potential to meet residential heating demands if deployed efficiently at low solar irradiance (i.e., 1 sun). The efficiency of solar thermal collectors depends on their ability to absorb incoming solar energy and minimize thermal losses. Most techniques utilize a vacuum gap between the solar absorber and the surroundings to eliminate conduction and convection losses, in combination with surface coatings to minimize reradiation losses. Here, we present an alternative approach that operates at atmospheric pressure with simple, black, absorbing surfaces. Silica based aerogels coated on black surfaces have the potential to act as simple and inexpensive solar thermal collectors because of their high transmission to solar radiation and low transmission to thermal radiation. To demonstrate their heat-trapping properties, we fabricated tetramethyl orthosilicate-based silica aerogels. A hydrophilic aerogel with a thickness of 1 cm exhibited a solar-averaged transmission of 76% and thermally averaged transmission of ≈1% (at 100 °C). To minimize unwanted solar absorption by O-H groups, we functionalized the aerogel to be hydrophobic, resulting in a solar-averaged transmission of 88%. To provide a deeper understanding of the link between aerogel properties and overall efficiency, we developed a coupled radiative-conductive heat transfer model and used it to predict solar thermal performance. Instantaneous solar thermal efficiencies approaching 55% at 1 sun and 80 °C were predicted. This study sheds light on the applicability of silica aerogels on black coatings for solar thermal collectors and offers design priorities for next-generation solar thermal aerogels.

Morphology and crystalline-phase-dependent electrical insulating properties in tailored polypropylene for HVDC cables

NASA Astrophysics Data System (ADS)

Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2016-11-01

Polypropylene (PP) has become one promising material to potentially replace the cross-link polyethylene used for high voltage direct current cables. Besides the isotactic polypropylene, the block polypropylene (b-PP) and random polypropylene (r-PP) can be synthesized through the copolymerization of ethylene and propylene molecules. In this letter, the effect of morphology and crystalline phases on the insulating electrical properties of PP was investigated. It was found that the introduction of polyethylene monomer resulted in the formation of β and γ phases in b-PP and r-PP. The results from the characteristic trap energy levels indicated that the β and γ phases could induce deep electron traps which enable to capture the carriers. And the space charge accumulation was obviously suppressed. Besides, the decreased electrical conductivity was observed in b-PP and r-PP. It is attributed to the existence of deep traps which can effectively reduce the carrier mobility and density in materials.

Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xing; Ma, Jun; Jiang, Huaxing

2014-09-08

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effectivemore » gate dielectric for AlN/GaN MIS devices.« less

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: indirect evidence for a permanent dipole moment.

PubMed

Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

2015-09-28

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: Indirect evidence for a permanent dipole moment

DOE PAGES

Zang, Huidong; Cristea, Mihail; Shen, Xuan; ...

2015-08-05

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Linear particle accelerator with seal structure between electrodes and insulators

DOEpatents

Broadhurst, John H.

1989-01-01

An electrostatic linear accelerator includes an electrode stack comprised of primary electrodes formed or Kovar and supported by annular glass insulators having the same thermal expansion rate as the electrodes. Each glass insulator is provided with a pair of fused-in Kovar ring inserts which are bonded to the electrodes. Each electrode is designed to define a concavo-convex particle trap so that secondary charged particles generated within the accelerated beam area cannot reach the inner surface of an insulator. Each insulator has a generated inner surface profile which is so configured that the electrical field at this surface contains no significant tangential component. A spark gap trigger assembly is provided, which energizes spark gaps protecting the electrodes affected by over voltage to prevent excessive energy dissipation in the electrode stack.

Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

NASA Astrophysics Data System (ADS)

Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

1999-02-01

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

NASA Astrophysics Data System (ADS)

Sleiman, A.; Rosamond, M. C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A. J.; Mabrook, M. F.; Zeze, D. A.

2012-01-01

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (˜9.15 × 1011 cm-2) and demonstrated 94% charge retention due to the superior encapsulation.

The role of inserted polymers in polymeric insulation materials: insights from QM/MD simulations.

PubMed

Li, Chunyang; Zhao, Hong; Zhang, Hui; Wang, Ying; Wu, Zhijian; Han, Baozhong

2018-02-28

In this study, we performed a quantum chemical molecular dynamics (QM/MD) simulation to investigate the space charge accumulation process in copolymers of polyethylene (PE) with ethylene acrylic acid (EAA), ethylene vinyl acetate (EVA), styrene-ethylene-butadiene-styrene (SEBS), and black carbon (BC). We predicted that BC, especially branched BC, would possess the highest electron affinity and is identified as the most promising filler in power cable insulation. Following incorporations of 0-4 high-energy electrons into the composites, branched BC exhibited the highest stability and almost all electrons were trapped by it. Therefore, PE was protected efficiently and BC can be considered as an efficient filler for high voltage cables and an inhibitor of tree formation. On the contrary, although EAA, EVA, and SEBS can trap high-energy electrons, the latter can be supersaturated in composites of EAA, EVA, and SEBS with PE. The inserted polymers was unavoidably destroyed following C-H and C-O bond cleavage, which results from the interactions and charge transfer between PE and inserted polymers. The content effects of -COOH, benzene, and -OCOCH 3 groups on the electron trapping, mobility and stability of PE were also investigated systematically. We hope this knowledge gained from this work will be helpful in understanding the role of inserted polymers and the growth mechanisms of electrical treeing in high voltage cable insulation.

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Hanna, Mina J.; Zhao, Han; Lee, Jack C.

2012-10-01

We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

Understanding Trap Effects on Electrical Treeing Phenomena in EPDM/POSS Composites.

PubMed

Du, Boxue; Su, Jingang; Tian, Meng; Han, Tao; Li, Jin

2018-05-31

POSS (polyhedral oligomeric silsesquioxane) provides an interesting alternative nano-silica and has the potential of superior dielectric properties to restrain electrical degradation. By incorporating POSS into EPDM to suppress electrical tree, one of precursors to dielectric failure, is promising to improve the lifetime of insulation materials. This paper focuses on the electrical treeing phenomena in EPDM/OVPOSS (ethylene propylene diene monomer/octavinyl-POSS) composites based on their physicochemical properties and trap distributions. ATR-IR and SEM characteristics are investigated to observe the chemical structure and physical dispersion of EPDM/OVPOSS composites. Electrical treeing characteristics are studied by the needle-plane electrode, and the trap level distributions are characterized by surface potential decay (SPD) tests. The results show that the 3 wt% EPDM/OVPOSS is more effective to restrain the electrical tree growth than the neat EPDM in this paper. It is indicated that the EPDM/OVPOSS with a filler content of 3 wt% introduces the largest energy level and trap density of deep trapped charges, which suppress the transportation of charge carriers injected from the needle tip and further prevent the degradation of polymer molecules. The polarity effects are obvious during the electrical treeing process, which is dependent on the trap level differences between positive and negative voltage.

Successive gain of insulator proteins in arthropod evolution.

PubMed

Heger, Peter; George, Rebecca; Wiehe, Thomas

2013-10-01

Alteration of regulatory DNA elements or their binding proteins may have drastic consequences for morphological evolution. Chromatin insulators are one example of such proteins and play a fundamental role in organizing gene expression. While a single insulator protein, CTCF (CCCTC-binding factor), is known in vertebrates, Drosophila melanogaster utilizes six additional factors. We studied the evolution of these proteins and show here that-in contrast to the bilaterian-wide distribution of CTCF-all other D. melanogaster insulators are restricted to arthropods. The full set is present exclusively in the genus Drosophila whereas only two insulators, Su(Hw) and CTCF, existed at the base of the arthropod clade and all additional factors have been acquired successively at later stages. Secondary loss of factors in some lineages further led to the presence of different insulator subsets in arthropods. Thus, the evolution of insulator proteins within arthropods is an ongoing and dynamic process that reshapes and supplements the ancient CTCF-based system common to bilaterians. Expansion of insulator systems may therefore be a general strategy to increase an organism's gene regulatory repertoire and its potential for morphological plasticity. © 2013 The Authors. Evolution published by Wiley Periodicals, Inc. on behalf of The Society for the Study of Evolution.

Developing Community-Level Policy and Practice to Reduce Traffic-Related Air Pollution Exposure

PubMed Central

Brugge, Doug; Patton, Allison P.; Bob, Alex; Reisner, Ellin; Lowe, Lydia; Bright, Oliver-John M.; Durant, John L.; Newman, Jim; Zamore, Wig

2016-01-01

The literature consistently shows associations of adverse cardiovascular and pulmonary outcomes with residential proximity to highways and major roadways. Air monitoring shows that traffic-related pollutants (TRAP) are elevated within 200–400 m of these roads. Community-level tactics for reducing exposure include the following: 1) HEPA filtration; 2) Appropriate air-intake locations; 3) Sound proofing, insulation and other features; 4) Land-use buffers; 5) Vegetation or wall barriers; 6) Street-side trees, hedges and vegetation; 7) Decking over highways; 8) Urban design including placement of buildings; 9) Garden and park locations; and 10) Active travel locations, including bicycling and walking paths. A multidisciplinary design charrette was held to test the feasibility of incorporating these tactics into near-highway housing and school developments that were in the planning stages. The resulting designs successfully utilized many of the protective tactics and also led to engagement with the designers and developers of the sites. There is a need to increase awareness of TRAP in terms of building design and urban planning. PMID:27413416

Home Electrical Safety Checklist

MedlinePlus

... any object? YES: Unwrap cords. Wrapped cords trap heat that normally escapes loose cords, which can lead to melting or weakening of insulation. Are cords attached to anything (wall, baseboard, etc) ...

Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices.

PubMed

Strobel, Sebastian; Sperling, Ralph A; Fenk, Bernhard; Parak, Wolfgang J; Tornow, Marc

2011-06-07

We report on the successful dielectrophoretic trapping and electrical characterization of DNA-coated gold nanoparticles on vertical nanogap devices (VNDs). The nanogap devices with an electrode distance of 13 nm were fabricated from Silicon-on-Insulator (SOI) material using a combination of anisotropic reactive ion etching (RIE), selective wet chemical etching and metal thin-film deposition. Au nanoparticles (diameter 40 nm) coated with a monolayer of dithiolated 8 base pairs double stranded DNA were dielectrophoretically trapped into the nanogap from electrolyte buffer solution at MHz frequencies as verified by scanning and transmission electron microscopy (SEM/TEM) analysis. First electrical transport measurements through the formed DNA-Au-DNA junctions partially revealed an approximately linear current-voltage characteristic with resistance in the range of 2-4 GΩ when measured in solution. Our findings point to the importance of strong covalent bonding to the electrodes in order to observe DNA conductance, both in solution and in the dry state. We propose our setup for novel applications in biosensing, addressing the direct interaction of biomolecular species with DNA in aqueous electrolyte media.

Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Ou-Yang, Wei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

Optical ferris wheel for ultracold atoms

NASA Astrophysics Data System (ADS)

Franke-Arnold, S.; Leach, J.; Padgett, M. J.; Lembessis, V. E.; Ellinas, D.; Wright, A. J.; Girkin, J. M.; Ohberg, P.; Arnold, A. S.

2007-07-01

We propose a versatile optical ring lattice suitable for trapping cold and quantum degenerate atomic samples. We demonstrate the realisation of intensity patterns from pairs of Laguerre-Gauss (exp(iℓө) modes with different ℓ indices. These patterns can be rotated by introducing a frequency shift between the modes. We can generate bright ring lattices for trapping atoms in red-detuned light, and dark ring lattices suitable for trapping atoms with minimal heating in the optical vortices of blue-detuned light. The lattice sites can be joined to form a uniform ring trap, making it ideal for studying persistent currents and the Mott insulator transition in a ring geometry.

On the surface trapping parameters of polytetrafluoroethylene block

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Yang, Kai; Zhao, Wen-Bin; Yan, Zhang

2006-12-01

Surface flashover phenomena under high electric field are closely related to the surface characteristics of a solid insulating material between energized electrodes. Based on measuring the surface potential decaying curve of polytetrafluoroethylene (PTFE) block charged by a needle-plane corona discharge, its surface trapping parameters are calculated with the isothermal current theory, and the correlative curve between the surface trap density and its energy level is obtained. The maximum density of electron traps and hole traps in the surface layer of PTFE presents a similar value of ∼2.7 × 1017 eV-1 m-3, and the energy level of its electron and hole traps is of about 0.85-1.0 eV and 0.80-0.90 eV, respectively. Via the X-ray photoelectron spectroscopy (XPS) technique, the F, C, K and O elements are detected on the surface of PTFE samples, and F shows a remarkable atom proportion of ∼73.3%, quite different from the intrinsic distribution corresponding to its chemical formula. The electron traps are attributed to quantities of F atoms existing on the surface of PTFE due to its molecular chain with C atoms surrounded by F atoms spirally. It is considered that the distortions of chemical and electronic structure on solid surface are responsible for the flashover phenomena occurring at a low applied voltage.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

SOI MESFETs on high-resistivity, trap-rich substrates

NASA Astrophysics Data System (ADS)

Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

2018-04-01

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Bandlike Transport in Ferroelectric-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Laudari, A.; Guha, S.

2016-10-01

The dielectric constant of polymer-ferroelectric dielectrics may be tuned by changing the temperature, offering a platform for monitoring changes in interfacial transport with the polarization strength in organic field-effect transistors (FETs). Temperature-dependent transport studies of FETs are carried out from a solution-processed organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), using both ferroelectric- and nonferroelectric-gate insulators. Nonferroelectric dielectric-based TIPS-pentacene FETs show a clear activated transport, in contrast to the ferroelectric dielectric polymer, poly(vinylidene fluoride-trifluoroethylene), where a negative temperature coefficient of the mobility is observed in the ferroelectric temperature range. The current-voltage (I -V ) characteristics from TIPS-pentacene diodes signal a space-charge-limited conduction (SCLC) for a discrete set of trap levels, suggesting that charge injection and transport occurs through regions of ordering in the semiconductor. The carrier mobility extracted from temperature-dependent I -V characteristics from the trap-free SCLC region shows a negative coefficient beyond 200 K, similar to the trend observed in FETs with the ferroelectric dielectric. At moderate temperatures, the polarization-fluctuation-dominant transport inherent in a ferroelectric dielectric, in conjunction with the nature of traps, results in an effective detrapping of the shallow-trap states into more mobile states in TIPS-pentacene.

Conductor load bearing roller for a gas-insulated transmission line having a corrugated outer conductor

DOEpatents

Fischer, William H.; Yoon, Kue H.

1984-04-10

A gas-insulated transmission line includes a corrugated outer conductor, an inner conductor disposed within and insulated from the outer conductor by means of support insulators and an insulating gas, and a transport device for supporting and permitting movement of the inner conductor/insulating support assembly axially along the corrugated outer conductor without radial displacement. The transport device includes two movable contacts, such as skids or rollers, supported on a common pivot lever, the pivot lever being rotatably disposed about a pivot lever axis, which pivot lever axis is in turn disposed on the periphery of a support insulator or particle trap if one is used. The movable contacts are separated axially a distance equal to the axial distance between the peaks and valleys of the corrugations of the outer conductor and separated radially a distance equal to the radial distance between the peaks and valleys of the corrugations of the outer conductor. The transport device has the pivot lever axis disposed perpendicular to the direction of travel of the inner conductor/insulating support assembly.

Evaluating abundance estimate precision and the assumptions of a count-based index for small mammals

USGS Publications Warehouse

Wiewel, A.S.; Adams, A.A.Y.; Rodda, G.H.

2009-01-01

Conservation and management of small mammals requires reliable knowledge of population size. We investigated precision of markrecapture and removal abundance estimates generated from live-trapping and snap-trapping data collected at sites on Guam (n 7), Rota (n 4), Saipan (n 5), and Tinian (n 3), in the Mariana Islands. We also evaluated a common index, captures per unit effort (CPUE), as a predictor of abundance. In addition, we evaluated cost and time associated with implementing live-trapping and snap-trapping and compared species-specific capture rates of selected live- and snap-traps. For all species, markrecapture estimates were consistently more precise than removal estimates based on coefficients of variation and 95 confidence intervals. The predictive utility of CPUE was poor but improved with increasing sampling duration. Nonetheless, modeling of sampling data revealed that underlying assumptions critical to application of an index of abundance, such as constant capture probability across space, time, and individuals, were not met. Although snap-trapping was cheaper and faster than live-trapping, the time difference was negligible when site preparation time was considered. Rattus diardii spp. captures were greatest in Haguruma live-traps (Standard Trading Co., Honolulu, HI) and Victor snap-traps (Woodstream Corporation, Lititz, PA), whereas Suncus murinus and Mus musculus captures were greatest in Sherman live-traps (H. B. Sherman Traps, Inc., Tallahassee, FL) and Museum Special snap-traps (Woodstream Corporation). Although snap-trapping and CPUE may have utility after validation against more rigorous methods, validation should occur across the full range of study conditions. Resources required for this level of validation would likely be better allocated towards implementing rigorous and robust methods.

High-voltage testing of a 500-kV dc photocathode electron gun.

PubMed

Nagai, Ryoji; Hajima, Ryoichi; Nishimori, Nobuyuki; Muto, Toshiya; Yamamoto, Masahiro; Honda, Yosuke; Miyajima, Tsukasa; Iijima, Hokuto; Kuriki, Masao; Kuwahara, Makoto; Okumi, Shoji; Nakanishi, Tsutomu

2010-03-01

A high-voltage dc photocathode electron gun was successfully conditioned up to a voltage of 550 kV and a long-time holding test for 8 h was demonstrated at an acceleration voltage of 500 kV. The dc photocathode electron gun is designed for future light sources based on energy-recovery linac and consists of a Cockcroft-Walton generator, a segmented cylindrical ceramic insulator, guard-ring electrodes, a support-rod electrode, a vacuum chamber, and a pressurized insulating gas tank. The segmented cylindrical ceramic insulator and the guard-ring electrodes were utilized to prevent any damage to the insulator from electrons emitted by the support-rod electrode.

Analytical model of secondary electron emission yield in electron beam irradiated insulators.

PubMed

Ghorbel, N; Kallel, A; Damamme, G

2018-06-12

The study of secondary electron emission (SEE) yield as a function of the kinetic energy of the incident primary electron beam and its evolution with charge accumulation inside insulators is a source of valuable information (even though an indirect one) on charge transport and trapping phenomena. We will show that this evolution is essentially due, in plane geometry conditions (achieved using a defocused electron beam), to the electric field effect (due to the accumulation of trapped charges in the bulk) in the escape zone of secondary electrons and not to modifications of trapping cross sections, which only have side effects. We propose an analytical model including the main basic phenomena underlying the space charge dynamics. It will be observed that such a model makes it possible to reproduce both qualitatively and quantitatively the measurement of SEE evolution as well as to provide helpful indications concerning charge transport (more precisely, the ratios between the mobility and diffusion coefficient with the thermal velocity of the charge carrier). Copyright © 2018 Elsevier Ltd. All rights reserved.

Electric and Magnetic Manipulation of Biological Systems

NASA Astrophysics Data System (ADS)

Lee, H.; Hunt, T. P.; Liu, Y.; Ham, D.; Westervelt, R. M.

2005-06-01

New types of biological cell manipulation systems, a micropost matrix, a microelectromagnet matrix, and a microcoil array, were developed. The micropost matrix consists of post-shaped electrodes embedded in an insulating layer. With a separate ac voltage applied to each electrode, the micropost matrix generates dielectrophoretic force to trap and move individual biological cells. The microelectromagnet matrix consists of two arrays of straight wires aligned perpendicular to each other, that are covered with insulating layers. By independently controlling the current in each wire, the microelectromagnet matrix creates versatile magnetic fields to manipulate individual biological cells attached to magnetic beads. The microcoil array is a set of coils implemented in a foundry using a standard silicon fabrication technology. Current sources to the coils, and control circuits are integrated on a single chip, making the device self-contained. Versatile manipulation of biological cells was demonstrated using these devices by generating optimized electric or magnetic field patterns. A single yeast cell was trapped and positioned with microscopic resolution, and multiple yeast cells were trapped and independently moved along the separate paths for cell-sorting.

Cavity-enhanced optical trapping of bacteria using a silicon photonic crystal.

PubMed

van Leest, Thijs; Caro, Jacob

2013-11-21

On-chip optical trapping and manipulation of cells based on the evanescent field of photonic structures is emerging as a promising technique, both in research and for applications in broader context. Relying on mass fabrication techniques, the involved integration of photonics and microfluidics allows control of both the flow of light and water on the scale of interest in single cell microbiology. In this paper, we demonstrate for the first time optical trapping of single bacteria (B. subtilis and E. coli) using photonic crystal cavities for local enhancement of the evanescent field, as opposed to the synthetic particles used so far. Three types of cavities (H0, H1 and L3) are studied, embedded in a planar photonic crystal and optimized for coupling to two collinear photonic crystal waveguides. The photonic crystals are fabricated on a silicon-on-insulator chip, onto which a fluidic channel is created as well. For each of the cavities, when pumped at the resonance wavelength (around 1550 nm), we clearly demonstrate optical trapping of bacteria, in spite of their low index contrast w.r.t. water. By tracking the confined Brownian motion of B. subtilis spores in the traps using recorded microscope observations, we derive strong in-plane trap stiffnesses of about 7.6 pN nm(-1) W(-1). The values found agree very well with calculations based on the Maxwell stress tensor for the force and finite-difference time-domain simulations of the fields for the fabricated cavity geometries. We envision that our lab-on-a-chip with photonic crystal traps opens up new application directions, e.g. immobilization of single bio-objects such as mammalian cells and bacteria under controlled conditions for optical microscopy studies.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

NASA Astrophysics Data System (ADS)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Investigation on Surface Insulation Strength of Machinable Ceramic Material under Pulsed Voltage in Vacuum

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Zhao, Wen-Bin; Ma, Xin-Pei; Li, Guang-Xin; Ma, Kui; Zheng, Nan; Yan, Zhang

Ceramic material has been widely used as insulator in vacuum. Their high hardness and brittle property brings some difficulty in the application. A new kind of machinable ceramic was invented recently. The ceramic can be machined easily and accurately after being sintered, which provides the possibility of making the insulator with fine and complicated configuration. The paper studies its surface insulation performance and flashover phenomena under pulsed excitation in vacuum. The ceramic samples with different crystallization parameters are tested under the vacuum level of 10-4 Pa. The machinable ceramic behaves better surface insulation performance than comparative the Al2O3 and glass sample. The effect of crystallization level on the trap density and flashover current is also presented. After flashover shots many times, the surface microscopic patterns of different samples are observed to investigate the damage status, which can be explained by the thermal damage mechanism.

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

NASA Astrophysics Data System (ADS)

Furuta, Mamoru; Kamada, Yudai; Hiramatsu, Takahiro; Li, Chaoyang; Kimura, Mutsumi; Fujita, Shizuo; Hirao, Takashi

2011-03-01

The positive bias instabilities of the zinc oxide thin-film transistors (ZnO TFTs) with a SiOx/SiNx-stacked gate insulator have been investigated. The film quality of a gate insulator of SiOx, which forms an interface with the ZnO channel, was varied by changing the gas mixture ratio of SiH4/N2O/N2 during plasma-enhanced chemical vapor deposition. The positive bias stress endurance of ZnO TFT strongly depended on the deposition condition of the SiOx gate insulator. From the relaxations of the transfer curve shift after imposition of positive bias stress, transfer curves could not be recovered completely without any thermal annealing. A charge trapping in a gate insulator rather than that in bulk ZnO and its interface with a gate insulator is a dominant instability mechanism of ZnO TFTs under positive bias stress.

Superfluid and Insulating Phases of Fermion Mixtures in Optical Lattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iskin, M.; Sa de Melo, C. A. R.

2007-08-24

The ground state phase diagram of fermion mixtures in optical lattices is analyzed as a function of interaction strength, fermion filling factor, and tunneling parameters. In addition to standard superfluid, phase-separated or coexisting superfluid-excess-fermion phases found in homogeneous or harmonically trapped systems, fermions in optical lattices have several insulating phases, including a molecular Bose-Mott insulator (BMI), a Fermi-Pauli (band) insulator (FPI), a phase-separated BMI-FPI mixture or a Bose-Fermi checkerboard (BFC). The molecular BMI phase is the fermion mixture counterpart of the atomic BMI found in atomic Bose systems, the BFC or BMI-FPI phases exist in Bose-Fermi mixtures, and lastly themore » FPI phase is particular to the Fermi nature of the constituent atoms of the mixture.« less

Metastability and avalanche dynamics in strongly correlated gases with long-range interactions

NASA Astrophysics Data System (ADS)

Hruby, Lorenz; Dogra, Nishant; Landini, Manuele; Donner, Tobias; Esslinger, Tilman

2018-03-01

We experimentally study the stability of a bosonic Mott insulator against the formation of a density wave induced by long-range interactions and characterize the intrinsic dynamics between these two states. The Mott insulator is created in a quantum degenerate gas of 87-Rubidium atoms, trapped in a 3D optical lattice. The gas is located inside and globally coupled to an optical cavity. This causes interactions of global range, mediated by photons dispersively scattered between a transverse lattice and the cavity. The scattering comes with an atomic density modulation, which is measured by the photon flux leaking from the cavity. We initialize the system in a Mott-insulating state and then rapidly increase the global coupling strength. We observe that the system falls into either of two distinct final states. One is characterized by a low photon flux, signaling a Mott insulator, and the other is characterized by a high photon flux, which we associate with a density wave. Ramping the global coupling slowly, we observe a hysteresis loop between the two states—a further signature of metastability. A comparison with a theoretical model confirms that the metastability originates in the competition between short- and global-range interactions. From the increasing photon flux monitored during the switching process, we find that several thousand atoms tunnel to a neighboring site on the timescale of the single-particle dynamics. We argue that a density modulation, initially forming in the compressible surface of the trapped gas, triggers an avalanche tunneling process in the Mott-insulating region.

KSI's Cross Insulated Core Transformer Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uhmeyer, Uwe

2009-08-04

Cross Insulated Core Transformer (CCT) technology improves on Insulated Core Transformer (ICT) implementations. ICT systems are widely used in very high voltage, high power, power supply systems. In an ICT transformer ferrite core sections are insulated from their neighboring ferrite cores. Flux leakage is present at each of these insulated gaps. The flux loss is raised to the power of stages in the ICT design causing output voltage efficiency to taper off with increasing stages. KSI's CCT technology utilizes a patented technique to compensate the flux loss at each stage of an ICT system. Design equations to calculate the fluxmore » compensation capacitor value are presented. CCT provides corona free operation of the HV stack. KSI's CCT based High Voltage power supply systems offer high efficiency operation, high frequency switching, low stored energy and smaller size over comparable ICT systems.« less

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Non-binding conductor load bearing roller for a gas-insulated transmission line having a corrugated outer conductor

DOEpatents

Fischer, William H.

1984-01-01

A gas-insulated transmission line includes a corrugated outer conductor, an inner conductor disposed within and insulated from the outer conductor by means of support insulators and an insulating gas, and a non-binding transport device for supporting and permitting movement of the inner conductor/insulating support assembly axially along the corrugated outer conductor without radial displacement and for moving without binding along corrugations of any slope less than vertical. The transport device includes two movable contacts, such as skids or rollers, supported on a common pivot lever, the pivot lever being rotatably disposed about a pivot lever axis, which pivot lever axis is in turn disposed on the periphery of a support insulator or particle trap if one is used. The movable contacts are separated axially a distance equal to the axial distance between the peaks and valleys of the corrugations of the outer conductor and separated radially a distance equal to the radial distance between the peaks and valleys of the corrugations of the outer conductor. The transport device has the pivot lever axis disposed parallel to the motion of travel of the inner conductor/insulating support assembly.

Rapid generation of Mott insulators from arrays of noncondensed atoms

NASA Astrophysics Data System (ADS)

Sturm, M. R.; Schlosser, M.; Birkl, G.; Walser, R.

2018-06-01

We theoretically analyze a scheme for a fast adiabatic transfer of cold atoms from the atomic limit of isolated traps to a Mott insulator close to the superfluid phase. This gives access to the Bose-Hubbard physics without the need of a prior Bose-Einstein condensate. The initial state can be prepared by combining the deterministic assembly of atomic arrays with resolved Raman-sideband cooling. In the subsequent transfer the trap depth is reduced significantly. We derive conditions for the adiabaticity of this process and calculate optimal adiabatic ramp shapes. Using available experimental parameters, we estimate the impact of heating due to photon scattering and compute the fidelity of the transfer scheme. Finally, we discuss the particle number scaling behavior of the method for preparing low-entropy states. Our findings demonstrate the feasibility of the proposed scheme with state-of-the-art technology.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

NASA Astrophysics Data System (ADS)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

2018-05-01

This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

Deposition of SiC x H y O z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

NASA Astrophysics Data System (ADS)

Qing, XIE; Haofan, LIN; Shuai, ZHANG; Ruixue, WANG; Fei, KONG; Tao, SHAO

2018-02-01

Non-thermal plasma surface modification for epoxy resin (EP) to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulated transmission line. In this paper, a pulsed Ar dual dielectrics atmospheric-pressure plasma jet (APPJ) was used for SiC x H y O z thin film deposition on EP samples. The film deposition was optimized by varying the treatment time while other parameters were kept at constants (treatment distance: 10 mm, precursor flow rate: 0.6 l min-1, maximum instantaneous power: 3.08 kW and single pulse energy: 0.18 mJ). It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18% and 13% when the deposition time was 3 min, respectively. The flashover voltage reduced as treatment time increased. Moreover, all the surface conductivity, surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min. Other measurements, such as atomic force microscopy and scanning electron microscope for EP surface morphology, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions, optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms. The results indicated that the original organic groups (C-H, C-C, C=O, C=C) were gradually replaced by the Si containing inorganic groups (Si-O-Si and Si-OH). The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage. However, when the plasma treatment time was longer than 3 min, the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.

Electron beam charging of insulators: A self-consistent flight-drift model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Touzin, M.; Goeuriot, D.; Guerret-Piecourt, C.

2006-06-01

Electron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges {rho}(x,t), the field F(x,t), and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate {sigma}(t) and the surfacemore » potential V{sub 0}(t). For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and {sigma}=1. Especially for low electron beam energies E{sub 0}<4 keV the incorporation of mainly positive charges can be controlled by the potential V{sub G} of a vacuum grid in front of the target surface. For high beam energies E{sub 0}=10, 20, and 30 keV high negative surface potentials V{sub 0}=-4, -14, and -24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected.« less

Dynamic microparticle manipulation with an electroosmotic flow gradient in low-frequency alternating current dielectrophoresis.

PubMed

Gencoglu, Aytug; Olney, David; LaLonde, Alexandra; Koppula, Karuna S; Lapizco-Encinas, Blanca H

2014-02-01

In this study, the potential of low-frequency AC insulator-based DEP (iDEP) was explored for the separation of polystyrene microparticles and yeast cells. An EOF gradient was generated by employing an asymmetrical, 20 Hz AC electrical signal in an iDEP device consisting of a microchannel with diamond-shaped insulating posts. Two types of samples were analyzed, the first sample contained three types of polystyrene particles with different diameters (0.5, 1.0, and 2.0 μm) and the second sample contained two types of polystyrene particles (1.0 and 2 μm) and yeast cells (6.3 μm). This particular scheme uses a tapered AC signal that allows for all particles to be trapped and concentrated at the insulating post array, as the signal becomes asymmetrical (more positive), particles are selectively released. The smallest particles in each sample were released first, since they require greater dielectrophoretic forces to remain trapped. The largest particles in each sample were released last, when the applied signal became cyclical. A dielectropherogram, which is analogous to a chromatogram, was obtained for each sample, demonstrating successful separation of the particles by showing "peaks" of the released particles. These separations were achieved at lower applied potentials than those reported in previous studies that used solely direct current electrical voltages. Additionally, mathematical modeling with COMSOL Multiphysics was carried out to estimate the magnitude of the dielectrophoretic and EOF forces acting on the particles considering the low-frequency, asymmetrical AC signal used in the experiments. The results demonstrated the potential of low-frequency AC-iDEP systems for handling and separating complex mixtures of microparticles and biological cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of Positron Sticking to the Surfaces of Topological Insulators

NASA Astrophysics Data System (ADS)

Shastry, K.; Joglekar, P. V.; Olenga, A. Y.; Fazleev, N. G.; Weiss, A. H.; Barniellini, B.

2013-03-01

We describe experiments aimed at probing the sticking of positrons to the surfaces of topological insulators. In these experiments, a magnetically beam will be used to deposit positrons at the surface of Bi2Te2Se. The energy spectra and intensities of electrons emitted as a result of Positron Annihilation induced Auger electron Spectroscopy (PAES) provides a distinct element specific signal which can be used to determine if positrons can be trapped efficiently into a surface localized bound state. The experiments are aimed at determining the practicality of using positron annihilation to selectively probe the critically important top most layer of topological insulator system. Welch Y1100, NSF DMR 0907679

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Thermal Testing and Analysis of an Efficient High-Temperature Multi-Screen Internal Insulation

NASA Technical Reports Server (NTRS)

Weiland, Stefan; Handrick, Karin; Daryabeigi, Kamran

2007-01-01

Conventional multi-layer insulations exhibit excellent insulation performance but they are limited to the temperature range to which their components reflective foils and spacer materials are compatible. For high temperature applications, the internal multi-screen insulation IMI has been developed that utilizes unique ceramic material technology to produce reflective screens with high temperature stability. For analytical insulation sizing a parametric material model is developed that includes the main contributors for heat flow which are radiation and conduction. The adaptation of model-parameters based on effective steady-state thermal conductivity measurements performed at NASA Langley Research Center (LaRC) allows for extrapolation to arbitrary stack configurations and temperature ranges beyond the ones that were covered in the conductivity measurements. Experimental validation of the parametric material model was performed during the thermal qualification test of the X-38 Chin-panel, where test results and predictions showed a good agreement.

Dielectrophoretic systems without embedded electrodes

DOEpatents

Cummings, Eric B [Livermore, CA; Singh, Anup K [San Francisco, CA

2006-03-21

Method and apparatus for dielectrophoretic separation of particles in a fluid based using array of insulating structures arranged in a fluid flow channel. By utilizing an array of insulating structures, a spatially inhomogeneous electric field is created without the use of the embedded electrodes conventionally employed for dielectrophoretic separations. Moreover, by using these insulating structures a steady applied electric field has been shown to provide for dielectrophoresis in contrast to the conventional use of an alternating electric field. In a uniform array of posts, dielectrophoretic effects have been produced flows having significant pressure-driven and electrokinetic transport. Above a threshold applied electric field, filaments of concentrated and rarefied particles appear in the flow as a result of dielectrophoresis. Above a higher threshold applied voltage, dielectrophoresis produces zones of highly concentrated and immobilized particles. These patterns are strongly influenced by the angle of the array of insulating structures with respect to the mean applied electric field and the shape of the insulating structures.

Time-Dependent Trapping of Pollinators Driven by the Alignment of Floral Phenology with Insect Circadian Rhythms

PubMed Central

Lau, Jenny Y. Y.; Guo, Xing; Pang, Chun-Chiu; Tang, Chin Cheung; Thomas, Daniel C.; Saunders, Richard M. K.

2017-01-01

Several evolutionary lineages in the early divergent angiosperm family Annonaceae possess flowers with a distinctive pollinator trapping mechanism, in which floral phenological events are very precisely timed in relation with pollinator activity patterns. This contrasts with previously described angiosperm pollinator traps, which predominantly function as pitfall traps. We assess the circadian rhythms of pollinators independently of their interactions with flowers, and correlate these data with detailed assessments of floral phenology. We reveal a close temporal alignment between patterns of pollinator activity and the floral phenology driving the trapping mechanism (termed ‘circadian trapping’ here). Non-trapping species with anthesis of standard duration (c. 48 h) cannot be pollinated effectively by pollinators with a morning-unimodal activity pattern; non-trapping species with abbreviated anthesis (23–27 h) face limitations in utilizing pollinators with a bimodal circadian activity; whereas species that trap pollinators (all with short anthesis) can utilize a broader range of potential pollinators, including those with both unimodal and bimodal circadian rhythms. In addition to broadening the range of potential pollinators based on their activity patterns, circadian trapping endows other selective advantages, including the possibility of an extended staminate phase to promote pollen deposition, and enhanced interfloral movement of pollinators. The relevance of the alignment of floral phenological changes with peaks in pollinator activity is furthermore evaluated for pitfall trap pollination systems. PMID:28713403

Method for detection of extremely low concentration

DOEpatents

Andresen, Brian D.; Miller, Fred S.

2002-01-01

An ultratrace detector system for hand-held gas chromatography having high sensitivity, for example, to emissions generated during production of weapons, biological compounds, drugs, etc. The detector system is insensitive to water, air, helium, argon, oxygen, and CO.sub.2. The detector system is basically composed of a hand-held capillary gas chromatography (GC), an insulated heated redox-chamber, a detection chamber, and a vapor trap. For example, the detector system may use gas phase redox reactions and spectral absorption of mercury vapor. The gas chromatograph initially separates compounds that percolate through a bed of heated mercuric oxide (HgO) in a silica--or other metal--aerogel material which acts as an insulator. Compounds easily oxidized by HgO liberate atomic mercury that subsequently pass through a detection chamber which includes a detector cell, such as quartz, that is illuminated with a 254 nm ultra-violet (UV) mercury discharge lamp which generates the exact mercury absorption bands that are used to detect the liberated mercury atoms. Atomic mercury strongly absorbs 254 nm energy is therefore a specific signal for reducing compounds eluting from the capillary GC, whereafter the atomic mercury is trapped for example, in a silicon-aerogel trap.

Ultratrace detector for hand-held gas chromatography

DOEpatents

Andresen, Brian D.; Miller, Fred S.

1999-01-01

An ultratrace detector system for hand-held gas chromatography having high sensitivity, for example, to emissions generated during production of weapons, biological compounds, drugs, etc. The detector system is insensitive to water, air, helium, argon, oxygen, and C0.sub.2. The detector system is basically composed of a hand-held capillary gas chromatography (GC), an insulated heated redox-chamber, a detection chamber, and a vapor trap. For example, the detector system may use gas phase redox reactions and spectral absorption of mercury vapor. The gas chromatograph initially separates compounds that percolate through a bed of heated mercuric oxide (HgO) in a silica--or other metal--aerogel material which acts as an insulator. Compounds easily oxidized by HgO liberate atomic mercury that subsequently pass through a detection chamber which includes a detector cell, such as quartz, that is illuminated with a 254 nm ultra-violet (UV) mercury discharge lamp which generates the exact mercury absorption bands that are used to detect the liberated mercury atoms. Atomic mercury strongly absorbs 254 nm energy is therefore a specific signal for reducing compounds eluting from the capillary GC, whereafter the atomic mercury is trapped for example, in a silicon-aerogel trap.

Advanced photonic filters based on cascaded Sagnac loop reflector resonators in silicon-on-insulator nanowires

NASA Astrophysics Data System (ADS)

Wu, Jiayang; Moein, Tania; Xu, Xingyuan; Moss, David J.

2018-04-01

We demonstrate advanced integrated photonic filters in silicon-on-insulator (SOI) nanowires implemented by cascaded Sagnac loop reflector (CSLR) resonators. We investigate mode splitting in these standing-wave (SW) resonators and demonstrate its use for engineering the spectral profile of on-chip photonic filters. By changing the reflectivity of the Sagnac loop reflectors (SLRs) and the phase shifts along the connecting waveguides, we tailor mode splitting in the CSLR resonators to achieve a wide range of filter shapes for diverse applications including enhanced light trapping, flat-top filtering, Q factor enhancement, and signal reshaping. We present the theoretical designs and compare the CSLR resonators with three, four, and eight SLRs fabricated in SOI. We achieve versatile filter shapes in the measured transmission spectra via diverse mode splitting that agree well with theory. This work confirms the effectiveness of using CSLR resonators as integrated multi-functional SW filters for flexible spectral engineering.

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Zhu, Lei; Chang, Yong-Wei; Gao, Nan; Su, Xin; Dong, YeMin; Fei, Lu; Wei, Xing; Wang, Xi

2018-04-01

Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61376021 and 61674159, and the Program of Shanghai Academic/Technology Research Leader under Grant No 17XD1424500.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

NASA Astrophysics Data System (ADS)

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

2016-03-01

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition.

PubMed

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W; Kitano, Masao

2016-03-07

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide (VO 2 ), the proposed meta-material is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Semi-flexible gas-insulated transmission line using protection tube in conductor plug-in joint

DOEpatents

Kommineni, P.R.

1983-01-25

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. A plug and socket arrangement is utilized for joining adjacent sections of the inner conductor, and a protection tube is utilized inside the hollow plug to maintain proper alignment of the joint when the transmission line is bent. 3 figs.

Semi-flexible gas-insulated transmission line using protection tube in conductor plug-in joint

DOEpatents

Kommineni, Prasad R.

1983-01-25

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. A plug and socket arrangement is utilized for joining adjacent sections of the inner conductor, and a protection tube is utilized inside the hollow plug to maintain proper alignment of the joint when the transmission line is bent.

Ion source based on the cathodic arc

DOEpatents

Sanders, David M.; Falabella, Steven

1994-01-01

A cylindrically symmetric arc source to produce a ring of ions which leave the surface of the arc target radially and are reflected by electrostatic fields present in the source to a point of use, such as a part to be coated. An array of electrically isolated rings positioned in the source serves the dual purpose of minimizing bouncing of macroparticles and providing electrical insulation to maximize the electric field gradients within the source. The source also includes a series of baffles which function as a filtering or trapping mechanism for any macroparticles.

Inhomogeneous atomic Bose-Fermi mixtures in cubic lattices.

PubMed

Cramer, M; Eisert, J; Illuminati, F

2004-11-05

We determine the ground state properties of inhomogeneous mixtures of bosons and fermions in cubic lattices and parabolic confining potentials. For finite hopping we determine the domain boundaries between Mott-insulator plateaux and hopping-dominated regions for lattices of arbitrary dimension within mean-field and perturbation theory. The results are compared with a new numerical method that is based on a Gutzwiller variational approach for the bosons and an exact treatment for the fermions. The findings can be applied as a guideline for future experiments with trapped atomic Bose-Fermi mixtures in optical lattices.

Moisture and Structural Analysis for High Performance Hybrid Wall Assemblies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grin, A.; Lstiburek, J.

2012-09-01

Based on past experience in the Building America program, BSC has found that combinations of materials and approaches—in other words, systems—usually provide optimum performance. Integration is necessary, as described in this research project. The hybrid walls analyzed utilize a combination of exterior insulation, diagonal metal strapping, and spray polyurethane foam and leave room for cavity-fill insulation. These systems can provide effective thermal, air, moisture, and water barrier systems in one assembly and provide structure.

Calcium silicate insulation structure

DOEpatents

Kollie, Thomas G.; Lauf, Robert J.

1995-01-01

An insulative structure including a powder-filled evacuated casing utilizes a quantity of finely divided synthetic calcium silicate having a relatively high surface area. The resultant structure-provides superior thermal insulating characteristics over a broad temperature range and is particularly well-suited as a panel for a refrigerator or freezer or the insulative barrier for a cooler or a insulated bottle.

Implementation of Remaining Useful Lifetime Transformer Models in the Fleet-Wide Prognostic and Health Management Suite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Vivek; Lybeck, Nancy J.; Pham, Binh

Research and development efforts are required to address aging and reliability concerns of the existing fleet of nuclear power plants. As most plants continue to operate beyond the license life (i.e., towards 60 or 80 years), plant components are more likely to incur age-related degradation mechanisms. To assess and manage the health of aging plant assets across the nuclear industry, the Electric Power Research Institute has developed a web-based Fleet-Wide Prognostic and Health Management (FW-PHM) Suite for diagnosis and prognosis. FW-PHM is a set of web-based diagnostic and prognostic tools and databases, comprised of the Diagnostic Advisor, the Asset Faultmore » Signature Database, the Remaining Useful Life Advisor, and the Remaining Useful Life Database, that serves as an integrated health monitoring architecture. The main focus of this paper is the implementation of prognostic models for generator step-up transformers in the FW-PHM Suite. One prognostic model discussed is based on the functional relationship between degree of polymerization, (the most commonly used metrics to assess the health of the winding insulation in a transformer) and furfural concentration in the insulating oil. The other model is based on thermal-induced degradation of the transformer insulation. By utilizing transformer loading information, established thermal models are used to estimate the hot spot temperature inside the transformer winding. Both models are implemented in the Remaining Useful Life Database of the FW-PHM Suite. The Remaining Useful Life Advisor utilizes the implemented prognostic models to estimate the remaining useful life of the paper winding insulation in the transformer based on actual oil testing and operational data.« less

Electron-trapping polycrystalline materials with negative electron affinity.

PubMed

McKenna, Keith P; Shluger, Alexander L

2008-11-01

The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considering their relevance for applications and abundance in the environment, there have been few experimental or theoretical studies of the electron trapping properties of grain boundaries in highly ionic materials such as the alkaline earth metal oxides and alkali halides. Here we demonstrate, by first-principles calculations on MgO, LiF and NaCl, a qualitatively new type of electron trapping at grain boundaries. This trapping is associated with the negative electron affinity of these materials and is unusual as the electron is confined in the empty space inside the dislocation cores.

Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

NASA Astrophysics Data System (ADS)

Nair, Shiny; Kathiresan, M.; Mukundan, T.

2018-02-01

Device characteristics of organic thin film transistor (OTFT) fabricated with conducting polyaniline:polystyrene sulphonic acid (PANi-PSS) electrodes, patterned by the Parylene lift-off method are systematically analyzed by way of two dimensional numerical simulation. The device simulation was performed taking into account field-dependent mobility, low mobility layer at the electrode-semiconductor interface, trap distribution in pentacene film and trapped charge at the organic/insulator interface. The electrical characteristics of bottom contact thin film transistor with PANi-PSS electrodes and pentacene active material is superior to those with palladium electrodes due to a lower charge injection barrier. Contact resistance was extracted in both cases by the transfer line method (TLM). The extracted charge concentration and potential profile from the two dimensional numerical simulation was used to explain the observed electrical characteristics. The simulated device characteristics not only matched the experimental electrical characteristics, but also gave an insight on the charge injection, transport and trap properties of the OTFTs as a function of different electrode materials from the perspectives of transistor operation.

The Development and Practical Use of A New 24kV Dry Air Insulated Switchgear

NASA Astrophysics Data System (ADS)

Yoshida, Tadahiro; Yano, Tomotaka; Tohya, Nobumoto; Inoue, Naoaki; Arioka, Masahiro; Sato, Shinji; Takeuchi, Toshie

We have developed a new environmentally fitted 24kV cubicle-type gas insulated switchgear (C-GIS) applying our dry air insulation technology and the electromagnetic actuation technology. Firstly, we clarified the relationship between the breakdown field strength at the tip/edge of high-voltage electrode in dry air and the field utilization factor expressing non-uniformity of the insulation gap. Based on the relationship, we designed the most suitable configuration and arrangement of the parts such as high-voltage conductors, disconnecting blades and some mechanical parts in a gas vessel. We succeeded in reducing both the number of insulation barriers and their size, compared with the former product. To reduce them, we produced some sample gaps simulated a practical insulation gap in the C-GIS and investigated its breakdown voltage dependence on the barrier height. Secondly, to apply the electromagnetic actuators for the operation mechanisms of the vacuum circuit breaker, we developed a new coupled analysis method that estimates the movement of a plunger inside the electromagnetic actuator and the electric current flowing through a closing/opening coil. Based on the analysis method, we could reduce both the number of the parts and close/open energy 45% and 80%, respectively, compared with the former spring-charged mechanism.

Capabilities of CdTe-Based Detectors With {mathrm {MoO}}_{x} Contacts for Detection of X- and gamma -Radiation

NASA Astrophysics Data System (ADS)

Maslyanchuk, O. L.; Solovan, M. M.; Brus, V. V.; Kulchynsky, V. V.; Maryanchuk, P. D.; Fodchuk, I. M.; Gnatyuk, V. A.; Aoki, T.; Potiriadis, C.; Kaissas, Y.

2017-05-01

The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the Mo-MoOx/p-CdTe/MoOx-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoOx/p-CdTe/MoOx-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.

Response of the Higgs amplitude mode of superfluid Bose gases in a three-dimensional optical lattice

NASA Astrophysics Data System (ADS)

Nagao, Kazuma; Takahashi, Yoshiro; Danshita, Ippei

2018-04-01

We study the Higgs mode of superfluid Bose gases in a three-dimensional optical lattice, which emerges near the quantum phase transition to the Mott insulator at commensurate fillings. Specifically, we consider responses of the Higgs mode to temporal modulations of the onsite interaction and the hopping energy. In order to calculate the response functions including the effects of quantum and thermal fluctuations, we map the Bose-Hubbard model onto an effective pseudospin-1 model and use a perturbative expansion based on the imaginary-time Green's function theory. We also include the effects of an inhomogeneous trapping potential by means of a local density approximation. We find that the response function for the hopping modulation is equal to that for the interaction modulation within our approximation. At the unit filling rate and in the absence of a trapping potential, we show that the Higgs mode can exist as a sharp resonance peak in the dynamical susceptibilities at typical temperatures. However, the resonance peak is significantly broadened due to the trapping potential when the modulations are applied globally to the entire system. We suggest that the Higgs mode can be detected as a sharp resonance peak by partial modulations around the trap center.

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

NASA Astrophysics Data System (ADS)

Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

2018-05-01

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

Polarizability of Six-Helix Bundle and Triangle DNA Origami and Their Escape Characteristics from a Dielectrophoretic Trap.

PubMed

Gan, Lin; Camacho-Alanis, Fernanda; Ros, Alexandra

2015-12-15

DNA nanoassemblies, such as DNA origamis, hold promise in biosensing, drug delivery, nanoelectronic circuits, and biological computing, which require suitable methods for migration and precision positioning. Insulator-based dielectrophoresis (iDEP) has been demonstrated as a powerful migration and trapping tool for μm- and nm-sized colloids as well as DNA origamis. However, little is known about the polarizability of origami species, which is responsible for their dielectrophoretic migration. Here, we report the experimentally determined polarizabilities of the six-helix bundle origami (6HxB) and triangle origami by measuring the migration times through a potential landscape exhibiting dielectrophoretic barriers. The resulting migration times correlate to the depth of the dielectrophoretic potential barrier and the escape characteristics of the origami according to an adapted Kramer's rate model, allowing their polarizabilities to be determined. We found that the 6HxB polarizability is larger than that of the triangle origami, which correlates with the variations in charge density of both origamis. Further, we discuss the orientation of both origami species in the dielectrophoretic trap and discuss the influence of diffusion during the escape process. Our study provides detailed insight into the factors contributing to the migration through dielectrophoretic potential landscapes, which can be exploited for applications with DNA and other nanoassemblies based on dielectrophoresis.

Method and apparatus for filling thermal insulating systems

DOEpatents

Arasteh, Dariush K.

1992-01-01

A method for filling insulated glazing units is disclosed. The method utilizes a vacuum chamber in which the insulated glazing units are placed. The insulated glazing units and vacuum chamber are evacuated simultaneously. The units are then refilled with a low conductance gas such as Krypton while the chamber is simultaneously refilled with air.

External insulation of electrified railway and energy saving analysis

NASA Astrophysics Data System (ADS)

Dun, Xiaohong

2018-04-01

Through the analysis of the formation process of insulator surface fouling and the cause of fouling of the insulator, the electrified railway was explored to utilize the coating material on the surface of the insulator to achieve the effect of flashover prevention. At the same time the purpose of energy conservation can be achieved.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Shell tile thermal protection system

NASA Technical Reports Server (NTRS)

Macconochie, I. O.; Lawson, A. G.; Kelly, H. N. (Inventor)

1984-01-01

A reusable, externally applied thermal protection system for use on aerospace vehicles subject to high thermal and mechanical stresses utilizes a shell tile structure which effectively separates its primary functions as an insulator and load absorber. The tile consists of structurally strong upper and lower metallic shells manufactured from materials meeting the thermal and structural requirements incident to tile placement on the spacecraft. A lightweight, high temperature package of insulation is utilized in the upper shell while a lightweight, low temperature insulation is utilized in the lower shell. Assembly of the tile which is facilitated by a self-locking mechanism, may occur subsequent to installation of the lower shell on the spacecraft structural skin.

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity

NASA Astrophysics Data System (ADS)

Muhtadi, S.; Hwang, S.; Coleman, A.; Asif, F.; Lunev, A.; Chandrashekhar, M. V. S.; Khan, A.

2017-04-01

We report on AlGaN field effect transistors over AlN/sapphire templates with selective area grown n-Al0.5Ga0.5N channel layers for which a field-effect mobility of 55 cm2/V-sec was measured. Using a pulsed plasma enhanced chemical vapor deposition deposited 100 A thick SiO2 layer as the gate-insulator, the gate-leakage currents were reduced by three orders of magnitude. These devices with or without gate insulators are excellent solar-blind ultraviolet detectors, and they can be operated either in the photoconductive or the photo-voltaic modes. In the photo-conductive mode, gain arising from hole-trapping in the depletion region leads to steady-state photoresponsivity as high as 1.2 × 106A/W at 254 nm, which drops sharply below 290 nm. A hole-trapping limited detector response time of 34 ms, fast enough for real-time flame-detection and imaging applications, was estimated.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Enhanced photon traps for Hyper-Kamiokande

NASA Astrophysics Data System (ADS)

Rott, Carsten; In, Seongjin; Retière, Fabrice; Gumplinger, Peter

2017-11-01

Hyper-Kamiokande, the next generation large water Cherenkov detector in Japan, is planning to use approximately 80,000 20-inch photomultiplier tubes (PMTs). They are one of the major cost factors of the experiment. We propose a novel enhanced photon trap design based on a smaller and more economical PMT in combination with wavelength shifters, dichroic mirrors, and broadband mirrors. GEANT4 is utilized to obtain photon collection efficiencies and timing resolution of the photon traps. We compare the performance of different trap configurations and sizes. Our simulations indicate an enhanced photon trap with a 12-inch PMT can match a 20-inch PMT's collection efficiency, however at a cost of reduced timing resolution. The photon trap might be suitable as detection module for the outer detector with large photo coverage area.

SINIS bolometer with a suspended absorber

NASA Astrophysics Data System (ADS)

Tarasov, M.; Edelman, V.; Mahashabde, S.; Fominsky, M.; Lemzyakov, S.; Chekushkin, A.; Yusupov, R.; Winkler, D.; Yurgens, A.

2018-03-01

We have developed a Superconductor-Insulator-Normal Metal-Insulator-Superconductor (SINIS) bolometer with a suspended normal metal bridge. The suspended bridge acts as a bolometric absorber with reduced heat losses to the substrate. Such bolometers were characterized at 100-350 mK bath temperatures and electrical responsivity of over 109 V/W was measured by dc heating the absorber through additional contacts. Suspended bolometers were also integrated in planar twin-slot and log-periodic antennas for operation in the submillimetre-band of radiation. The measured voltage response to radiation at 300 GHz and at 100 mK bath temperature is 3*108 V/W and a current response is 1.1*104 A/W which corresponds to a quantum efficiency of ~15 electrons per photon. An important feature of such suspended bolometers is the thermalization of electrons in the absorber heated by optical radiation, which in turn provides better quantum efficiency. This has been confirmed by comparison of bolometric response to dc and rf heating. We investigate the performance of direct SN traps and NIS traps with a tunnel barrier between the superconductor and normal metal trap. Increasing the volume of superconducting electrode helps to reduce overheating of superconductor. Influence of Andreev reflection and Kapitza resistance, as well as electron-phonon heat conductivity and thermal conductivity of N-wiring are estimated for such SINIS devices.

Hybrid insulation coordination and optimisation for 1 MV operation of pulsed electron accelerator KALI-30GW

DOE Office of Scientific and Technical Information (OSTI.GOV)

Senthil, K.; Mitra, S.; Sandeep, S., E-mail: sentilk@barc.gov.in

In a multi-gigawatt pulsed power system like KALI-30 GW, insulation coordination is required to achieve high voltages ranging from 0.3 MV to 1 MV. At the same time optimisation of the insulation parameters is required to minimize the inductance of the system, so that nanoseconds output can be achieved. The KALI-30GW pulse power system utilizes a combination of Perspex, delrin, epoxy, transformer oil, nitrogen/SF{sub 6} gas and vacuum insulation at its various stages in compressing DC high voltage to a nanoseconds pulse. This paper describes the operation and performance of the system from 400 kV to 1030 kV output voltagemore » pulse and insulation parameters utilized for obtaining peak 1 MV output. (author)« less

Multi-layered nanocomposite dielectrics for high density organic memory devices

NASA Astrophysics Data System (ADS)

Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik

2015-01-01

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

Ion source based on the cathodic arc

DOEpatents

Sanders, D.M.; Falabella, S.

1994-02-01

A cylindrically symmetric arc source to produce a ring of ions which leave the surface of the arc target radially and are reflected by electrostatic fields present in the source to a point of use, such as a part to be coated, is described. An array of electrically isolated rings positioned in the source serves the dual purpose of minimizing bouncing of macroparticles and providing electrical insulation to maximize the electric field gradients within the source. The source also includes a series of baffles which function as a filtering or trapping mechanism for any macroparticles. 3 figures.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

When alcohol is the answer: trapping, identifying and quantifying simple alkylating species in aqueous environments

PubMed Central

Penketh, P. G.; Shyam, K.; Baumann, R. P; Zhu, Rui; Ishiguro, K.; Sartorelli, A. C.; Ratner, E. S.

2016-01-01

Alkylating agents are a significant class of environmental carcinogens as well as commonly used anticancer therapeutics. Traditional alkylating activity assays have utilized the colorimetric reagent 4-(4-nitrobenzyl)pyridine (4NBP). However, 4NBP based assays have a relatively low sensitivity towards harder, more oxophilic alkylating species and are not well suited for the identification of the trapped alkyl moiety due to adduct instability. Herein we describe a method using water as the trapping agent which permits the trapping of simple alkylating electrophiles with a comparatively wide range of softness/hardness and permits the identification of donated simple alkyl moieties. PMID:27188264

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Synthetic topological Kondo insulator in a pumped optical cavity

NASA Astrophysics Data System (ADS)

Zheng, Zhen; Zou, Xu-Bo; Guo, Guang-Can

2018-02-01

Motivated by experimental advances on ultracold atoms coupled to a pumped optical cavity, we propose a scheme for synthesizing and observing the Kondo insulator in Fermi gases trapped in optical lattices. The synthetic Kondo phase arises from the screening of localized atoms coupled to mobile ones, which in our proposal is generated via the pumping laser as well as the cavity. By designing the atom-cavity coupling, it can engineer a nearest-neighbor-site Kondo coupling that plays an essential role for supporting topological Kondo phase. Therefore, the cavity-induced Kondo transition is associated with a nontrivial topological features, resulting in the coexistence of the superradiant and topological Kondo state. Our proposal can be realized with current technique, and thus has potential applications in quantum simulation of the topological Kondo insulator in ultracold atoms.

Method and apparatus for filling thermal insulating systems

DOEpatents

Arasteh, D.K.

1992-01-14

A method for filling insulated glazing units is disclosed. The method utilizes a vacuum chamber in which the insulated glazing units are placed. The insulated glazing units and vacuum chamber are evacuated simultaneously. The units are then refilled with a low conductance gas such as Krypton while the chamber is simultaneously refilled with air. 3 figs.

A wall-free climate unit for acoustic levitators.

PubMed

Schlegel, M C; Wenzel, K-J; Sarfraz, A; Panne, U; Emmerling, F

2012-05-01

Acoustic levitation represents the physical background of trapping a sample in a standing acoustic wave with no contact to the wave generating device. For the last three decades, sample holders based on this effect have been commonly used for contact free handling of samples coupled with a number of analytical techniques. In this study, a wall-free climate unit is presented, which allows the control of the environmental conditions of suspended samples. The insulation is based on a continuous cold/hot gas flow around the sample and thus does not require any additional isolation material. This provides a direct access to the levitated sample and circumvents any influence of the climate unit material to the running analyses.

A wall-free climate unit for acoustic levitators

NASA Astrophysics Data System (ADS)

Schlegel, M. C.; Wenzel, K.-J.; Sarfraz, A.; Panne, U.; Emmerling, F.

2012-05-01

Acoustic levitation represents the physical background of trapping a sample in a standing acoustic wave with no contact to the wave generating device. For the last three decades, sample holders based on this effect have been commonly used for contact free handling of samples coupled with a number of analytical techniques. In this study, a wall-free climate unit is presented, which allows the control of the environmental conditions of suspended samples. The insulation is based on a continuous cold/hot gas flow around the sample and thus does not require any additional isolation material. This provides a direct access to the levitated sample and circumvents any influence of the climate unit material to the running analyses.

In-field implementation of impedance-based structural health monitoring for insulated rail joints

NASA Astrophysics Data System (ADS)

Albakri, Mohammad I.; Malladi, V. V. N. Sriram; Woolard, Americo G.; Tarazaga, Pablo A.

2017-04-01

Track defects are a major safety concern for the railroad industry. Among different track components, insulated rail joints, which are widely used for signaling purposes, are considered a weak link in the railroad track. Several joint-related defects have been identified by the railroad community, including rail wear, torque loss, and joint bar breakage. Current track inspection techniques rely on manual and visual inspection or on specially equipped testing carts, which are costly, timeconsuming, traffic disturbing, and prone to human error. To overcome the aforementioned limitations, the feasibility of utilizing impedance-based structural health monitoring for insulated rail joints is investigated in this work. For this purpose, an insulated joint, provided by Koppers Inc., is instrumented with piezoelectric transducers and assembled with 136 AREA rail plugs. The instrumented joint is then installed and tested at the Facility for Accelerated Service Testing, Transportation Technology Center Inc. The effects of environmental and operating conditions on the measured impedance signatures are investigated through a set of experiments conducted at different temperatures and loading conditions. The capabilities of impedance-based SHM to detect several joint-related damage types are also studied by introducing reversible mechanical defects to different joint components.

Enhanced photovoltage on the surface of topological insulator via optical aging

NASA Astrophysics Data System (ADS)

Yoshikawa, Tomoki; Ishida, Yukiaki; Sumida, Kazuki; Chen, Jiahua; Kokh, Konstantin A.; Tereshchenko, Oleg E.; Shin, Shik; Kimura, Akio

2018-05-01

The efficient generation of spin-polarized current is one of the keys to realizing spintronic devices with a low power consumption. Topological insulators are strong candidates for this purpose. A surface photovoltaic effect can be utilized on the surface of a topological insulator, where a surface spin-polarized current can flow upon illumination. Here, we used time- and angle-resolved photoelectron spectroscopy on the surface of Bi2Te3 to demonstrate that the magnitude of the surface photovoltage is almost doubled in optically aged samples, i.e., samples whose surface has been exposed to intense infrared light illumination. Our findings pave the way for optical control of the spin-polarized current by utilizing topological insulators.

Ternary binder based plasters with improved thermal insulating ability

NASA Astrophysics Data System (ADS)

Čáchová, M.; Koňáková, D.; Vejmelková, E.; Vyšvařil, M.

2017-10-01

New kind of plasters with improved thermal insulating ability are presented in this article. Improvement was reached by utilization of lightweight expanded perlite with high porosity. The second used aggregate was silica sand. Regarding the binder, three kind were combined for the reason of better plaster performance. Pure lime, Portland cement and pozzolanic ceramic powder were employed. Basic physical properties and thermal characteristics were determined. The porosity of plasters reached desired higher value about 50% and the thermal conductivity in dry state was lower than 0.16 Wm-1K-1.

Measurement of the trapping and detrapping properties of polymers in relation with their microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vallayer, B.; Hourquebie, P.; Marsacq, D.

1996-12-31

In the field of Space Charge Physics, the role of electrical traps on space charge behavior and therefore on the breakdown properties has been now well-established. However, the traps in polymers are very difficult to define compared to the case of ceramics for which a lot of studies have been performed. A new specific method for measuring the trapping and detrapping properties of dielectric materials has been developed. This method allows to characterize the electrostatic state of an insulating sample after irradiation by a high energy electron beam. The authors discuss the basis of the method and its general possibilitiesmore » to measure the breakdown relevant parameters as the secondary electron yield for instance. Moreover, the method has been used on several polymers as HDPE and LDPE. The difference of trapping properties between those materials can be explained by microstructure evolutions (crystallinity ratio) due to a difference of the branching rate. This difference of trapping and detrapping properties of these two polymers could be connected to the breakdown behavior of the two materials which is known to be very different.« less

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

PubMed

Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

2017-06-14

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

The structures of interstitial hydrogen centers in VO 2 in the dilute limit from their vibrational properties and theory

DOE PAGES

Yin, W.; Qin, Ying; Fowler, W. B.; ...

2016-07-28

The introduction of a large concentration of H into VO 2 is known to suppress the insulating phase of the metal-insulator transition that occurs upon cooling below 340 K. We have used infrared spectroscopy and complementary theory to study the properties of interstitial H and D in VO 2 in the dilute limit to determine the vibrational frequencies, thermal stabilities, and equilibrium positions of isolated interstitial H and D centers. The vibrational lines of several OH and OD centers were observed to have thermal stabilities similar to that of the hydrogen that suppresses the insulating phase. Theory associates two ofmore » the four possible OH configurations for Hi in the insulating VO 2 monoclinic phase with OH lines seen by experiment. Furthermore, theory predicts the energies and vibrational frequencies for configurations with Hi trapped near a substitutional impurity and suggests such defects as candidates for additional OH centers that have been observed.« less

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NASA Astrophysics Data System (ADS)

Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

2016-02-01

Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

Economics of PPP-insulated pipe-type cable: Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ernst, A.

1987-10-01

This study has been designed to establish the economic range of application and the potential cost advantage of PPP-insulated pipe-type cable compared with presently utilized paper-insulated designs. The study is in two parts. In the first part the electrical and thermal characteristics of a range of cable sizes are tabulated. This data can be utilized for planning and economic comparison purposes. In the second part 12 transmission load scenarios are studied to determine the relative cost of various designs considering materials, installation and the losses over a wide range of assumptions.

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

PubMed Central

Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

2016-01-01

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

Surface-modified CMOS IC electrochemical sensor array targeting single chromaffin cells for highly parallel amperometry measurements.

PubMed

Huang, Meng; Delacruz, Joannalyn B; Ruelas, John C; Rathore, Shailendra S; Lindau, Manfred

2018-01-01

Amperometry is a powerful method to record quantal release events from chromaffin cells and is widely used to assess how specific drugs modify quantal size, kinetics of release, and early fusion pore properties. Surface-modified CMOS-based electrochemical sensor arrays allow simultaneous recordings from multiple cells. A reliable, low-cost technique is presented here for efficient targeting of single cells specifically to the electrode sites. An SU-8 microwell structure is patterned on the chip surface to provide insulation for the circuitry as well as cell trapping at the electrode sites. A shifted electrode design is also incorporated to increase the flexibility of the dimension and shape of the microwells. The sensitivity of the electrodes is validated by a dopamine injection experiment. Microwells with dimensions slightly larger than the cells to be trapped ensure excellent single-cell targeting efficiency, increasing the reliability and efficiency for on-chip single-cell amperometry measurements. The surface-modified device was validated with parallel recordings of live chromaffin cells trapped in the microwells. Rapid amperometric spikes with no diffusional broadening were observed, indicating that the trapped and recorded cells were in very close contact with the electrodes. The live cell recording confirms in a single experiment that spike parameters vary significantly from cell to cell but the large number of cells recorded simultaneously provides the statistical significance.

The refreezing of melt ponds on Arctic sea ice

NASA Astrophysics Data System (ADS)

Flocco, Daniela; Feltham, Daniel L.; Bailey, Eleanor; Schroeder, David

2015-02-01

The presence of melt ponds on the surface of Arctic sea ice significantly reduces its albedo, inducing a positive feedback leading to sea ice thinning. While the role of melt ponds in enhancing the summer melt of sea ice is well known, their impact on suppressing winter freezing of sea ice has, hitherto, received less attention. Melt ponds freeze by forming an ice lid at the upper surface, which insulates them from the atmosphere and traps pond water between the underlying sea ice and the ice lid. The pond water is a store of latent heat, which is released during refreezing. Until a pond freezes completely, there can be minimal ice growth at the base of the underlying sea ice. In this work, we present a model of the refreezing of a melt pond that includes the heat and salt balances in the ice lid, trapped pond, and underlying sea ice. The model uses a two-stream radiation model to account for radiative scattering at phase boundaries. Simulations and related sensitivity studies suggest that trapped pond water may survive for over a month. We focus on the role that pond salinity has on delaying the refreezing process and retarding basal sea ice growth. We estimate that for a typical sea ice pond coverage in autumn, excluding the impact of trapped ponds in models overestimates ice growth by up to 265 million km3, an overestimate of 26%.

Novel Solar Energy Conversion Materials by Design of Mn(II) Oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lany, S.; Peng, H.; Ndione, P.

2013-01-01

Solar energy conversion materials need to fulfill simultaneously a number of requirements in regard of their band-structure, optical properties, carrier transport, and doping. Despite their desirable chemical properties, e.g., for photo-electrocatalysis, transition-metal oxides usually do not have desirable semiconducting properties. Instead, oxides with open cation d-shells are typically Mott or charge-transfer insulators with notoriously poor transport properties, resulting from large effective electron/hole masses or from carrier self-trapping. Based on the notion that the electronic structure features (p-d interaction) supporting the p-type conductivity in d10 oxides like Cu2O and CuAlO2 occurs in a similar fashion also in the d5 (high-spin) oxides,more » we recently studied theoretically the band-structure and transport properties of the prototypical binary d5 oxides MnO and Fe2O3 [PRB 85, 201202(R)]. We found that MnO tends to self-trap holes by forming Mn+III, whereas Fe2O3 self-traps electrons by forming Fe+II. However, the self-trapping of holes is suppressed by when Mn is tetrahedrally coordinated, which suggests specific routes to design novel solar conversion materials by considering ternary Mn(II) oxides or oxide alloys. We are presenting theory, synthesis, and initial characterization for these novel energy materials.« less

When alcohol is the answer: Trapping, identifying and quantifying simple alkylating species in aqueous environments.

PubMed

Penketh, Philip G; Shyam, Krishnamurthy; Baumann, Raymond P; Zhu, Rui; Ishiguro, Kimiko; Sartorelli, Alan C; Ratner, Elena S

2016-09-01

Alkylating agents are a significant class of environmental carcinogens as well as commonly used anticancer therapeutics. Traditional alkylating activity assays have utilized the colorimetric reagent 4-(4-nitrobenzyl)pyridine (4NBP). However, 4NBP based assays have a relatively low sensitivity towards harder, more oxophilic alkylating species and are not well suited for the identification of the trapped alkyl moiety due to adduct instability. Herein we describe a method using water as the trapping agent which permits the trapping of simple alkylating electrophiles with a comparatively wide range of softness/hardness and permits the identification of donated simple alkyl moieties. Copyright © 2016 Elsevier Inc. All rights reserved.

Analysis of antioxidants in insulation cladding of copper wire: a comparison of different mass spectrometric techniques (ESI-IT, MALDI-RTOF and RTOF-SIMS).

PubMed

Schnöller, Johannes; Pittenauer, Ernst; Hutter, Herbert; Allmaier, Günter

2009-12-01

Commercial copper wire and its polymer insulation cladding was investigated for the presence of three synthetic antioxidants (ADK STAB AO412S, Irganox 1010 and Irganox MD 1024) by three different mass spectrometric techniques including electrospray ionization-ion trap-mass spectrometry (ESI-IT-MS), matrix-assisted laser desorption/ionization reflectron time-of-flight (TOF) mass spectrometry (MALDI-RTOF-MS) and reflectron TOF secondary ion mass spectrometry (RTOF-SIMS). The samples were analyzed either directly without any treatment (RTOF-SIMS) or after a simple liquid/liquid extraction step (ESI-IT-MS, MALDI-RTOF-MS and RTOF-SIMS). Direct analysis of the copper wire itself or of the insulation cladding by RTOF-SIMS allowed the detection of at least two of the three antioxidants but at rather low sensitivity as molecular radical cations and with fairly strong fragmentation (due to the highly energetic ion beam of the primary ion gun). ESI-IT- and MALDI-RTOF-MS-generated abundant protonated and/or cationized molecules (ammoniated or sodiated) from the liquid/liquid extract. Only ESI-IT-MS allowed simultaneous detection of all three analytes in the extract of insulation claddings. The latter two so-called 'soft' desorption/ionization techniques exhibited intense fragmentation only by applying low-energy collision-induced dissociation (CID) tandem MS on a multistage ion trap-instrument and high-energy CID on a tandem TOF-instrument (TOF/RTOF), respectively. Strong differences in the fragmentation behavior of the three analytes could be observed between the different CID spectra obtained from either the IT-instrument (collision energy in the very low eV range) or the TOF/RTOF-instrument (collision energy 20 keV), but both delivered important structural information. Copyright 2009 John Wiley & Sons, Ltd.

Electrostatic Charging and Particle Interactions in Microscopic Insulating Grains

NASA Astrophysics Data System (ADS)

Lee, Victor

In this thesis, we experimentally investigate the electrostatic charging as well as the particle interactions in microscopic insulating grains. First, by tracking individual grains accelerated in an electric field, we quantitatively demonstrate that tribocharging of same-material grains depends on particle size. Large grains tend to charge positively, and small ones tend to charge negatively. Theories based on the transfer of trapped electrons can explain this tendency but have not been validated. Here we show that the number of trapped electrons, measured independently by a thermoluminescence technique, is orders of magnitude too small to be responsible for the amount of charge transferred. This result reveals that trapped electrons are not responsible for same-material tribocharging of dielectric particles. Second, same-material tribocharging in grains can result in important long-range electrostatic interactions. However, how these electrostatic interactions contribute to particle clustering remains elusive, primarily due to the lack of direct, detailed observations. Using a high-speed camera that falls with a stream charged grains, we observe for the first time how charged grains can undergo attractive as well as repulsive Kepler-like orbits. Charged particles can be captured in their mutual electrostatic potential and form clusters via multiple bounces. Dielectric polarization effects are directly observed, which lead to additional attractive forces and stabilize "molecule-like" arrangements of charged particles. Third, we have developed a new method to study the charge transfer of microscopic particles based on acoustic levitation techniques. This method allows us to narrow the complex problem of many-particle charging down to precise charge measurements of a single sub-millimeter particle colliding with a target plate. By simply attaching nonpolar groups onto glass surfaces, we show that the contact charging of a particle is highly dependent on hydrophobicity. Charging between a hydrophilic and a hydrophobic surface is enhanced in a basic atmosphere and suppressed in an acidic one. Moreover, hydrophobicity is also found to play a key role in particle charging driven by an external electric field. These results strongly support the idea that aqueous-ion transfer is responsible for the particle contact charging phenomenon.

Measurement System of Surface Electrostatic Potential on Insulation Board in Vacuum and its Application

NASA Astrophysics Data System (ADS)

Morita, Hiroshi; Hatanaka, Ayumu; Yokosuka, Toshiyuki; Seki, Yoshitaka; Tsumuraya, Yoshiaki; Doi, Motomichi

The measurement system of the surface electrostatic potential on a solid insulation board in vacuum has been developed. We used this system to measure the electrostatic potential distribution of the surface of a borosilicate glass plate applied a high voltage. A local increase in the electric field was observed. It is considered that this phenomenon is caused by a positive electrostatic charge generated by a secondary emission of field emission electrons from an electrode. On the other hand, a local increase in the electric field was not observed on a glass plate coated with silica particles and a glass plate roughened by sandblast. We reasoned that this could be because the electrons were trapped by the roughness of the surface. It is considered that these phenomena make many types of equipment using the vacuum insulation more reliable.

Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

PubMed

Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

2017-11-30

The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

Optimal design of DC-based polarization beam splitter in lithium niobate on insulator

NASA Astrophysics Data System (ADS)

Gong, Zisu; Yin, Rui; Ji, Wei; Wang, Junbao; Wu, Chonghao; Li, Xiao; Zhang, Shicheng

2017-08-01

We propose a DC-based polarization beam splitter (PBS) in lithium niobate on insulator (LNOI). Utilizing the high birefringence property of Lithium Niobate (LiNbO3, LN), the device is achieved by simple structure in a short length. With the use of beam propagation method (BPM), the simulation results show that the device has a good performance for the separation of TE and TM polarizations with a high extinction ratio (about 35 dB). The simulated fabrication tolerance for the variation of the waveguide width is about 100 nm and the bandwidth is about 65 nm when the extinction ratio is higher than 10 dB.

An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

PubMed

Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

2018-09-01

In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

Spontaneously formed high-performance charge-transport layers of organic single-crystal semiconductors on precisely synthesized insulating polymers

NASA Astrophysics Data System (ADS)

Makita, Tatsuyuki; Sasaki, Masayuki; Annaka, Tatsuro; Sasaki, Mari; Matsui, Hiroyuki; Mitsui, Chikahiko; Kumagai, Shohei; Watanabe, Shun; Hayakawa, Teruaki; Okamoto, Toshihiro; Takeya, Jun

2017-04-01

Charge-transporting semiconductor layers with high carrier mobility and low trap-density, desired for high-performance organic transistors, are spontaneously formed as a result of thermodynamic phase separation from a blend of π-conjugated small molecules and precisely synthesized insulating polymers dissolved in an aromatic solvent. A crystal film grows continuously to the size of centimeters, with the critical conditions of temperature, concentrations, and atmosphere. It turns out that the molecular weight of the insulating polymers plays an essential role in stable film growth and interfacial homogeneity at the phase separation boundary. Fabricating the transistor devices directly at the semiconductor-insulator boundaries, we demonstrate that the mixture of 3,11-didecyldinaphtho[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and poly(methyl methacrylate) with the optimized weight-average molecular weight shows excellent device performances. The spontaneous phase separation with a one-step fabrication process leads to a high mobility up to 10 cm2 V-1 s-1 and a low subthreshold swing of 0.25 V dec-1 even without any surface treatment such as self-assembled monolayer modifications on oxide gate insulators.

Suppression of space charge in crosslinked polyethylene filled with poly(stearyl methacrylate)-grafted SiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Ling; Khani, Mohammad M.; Krentz, Timothy M.; Huang, Yanhui; Zhou, Yuanxiang; Benicewicz, Brian C.; Nelson, J. Keith; Schadler, Linda S.

2017-03-01

Incorporating inorganic nanoparticles (NPs) into polymer matrices provides a promising solution for suppressing space charge effects that can lead to premature failure of electrical insulation used in high voltage direct current engineering. However, realizing homogeneous NP dispersion is a great challenge especially in high-molecular-weight polymers. Here, we address this issue in crosslinked polyethylene by grafting matrix-compatible polymer brushes onto spherical colloidal SiO2 NPs (10-15 nm diameter) to obtain a uniform NP dispersion, thus achieving enhanced space charge suppression, improved DC breakdown strength, and restricted internal field distortion (≤10.6%) over a wide range of external DC fields from -30 kV/mm to -100 kV/mm at room temperature. The NP dispersion state is the key to ensuring an optimized distribution of deep trapping sites. A well-dispersed system provides sufficient charge trapping sites and shows better performance compared to ones with large aggregates. This surface ligand strategy is attractive for future nano-modification of many engineering insulating polymers.

Keeping warm with fur in cold water: entrainment of air in hairy surfaces

NASA Astrophysics Data System (ADS)

Nasto, Alice; Regli, Marianne; Brun, Pierre-Thomas; Clanet, Christophe; Hosoi, Anette

2015-11-01

Instead of relying on a thick layer of body fat for insulation as many aquatic mammals do, fur seals and otters trap air in their dense fur for insulation in cold water. Using a combination of model experiments and theory, we rationalize this mechanism of air trapping underwater for thermoregulation. For the model experiments, hairy surfaces are fabricated using laser cut molds and casting samples with PDMS. Modeling the hairy texture as a network of capillary tubes, the imbibition speed of water into the hairs is obtained through a balance of hydrostatic pressure and viscous stress. In this scenario, the bending of the hairs and capillary forces are negligible. The maximum diving depth that can be achieved before the hairs are wetted to the roots is predicted from a comparison of the diving speed and imbibition speed. The amount of air that is entrained in hairy surfaces is greater than what is expected for classic Landau-Levich-Derjaguin plate plunging. A phase diagram with the parameters from experiments and biological data allows a comparison of the model system and animals.

Study of thermal aging effects on the conduction and trapping of charges in XLPE cable insulations under electron beam irradiation

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2018-08-01

The effect of thermal aging on the charging phenomena in cross-linked polyethylene (XLPE) has been studied under electron beam irradiation in scanning electron microscope (SEM). The dynamic variation of trapped charge represents the trapping process of XLPE under electron beam irradiation. We have found that the trapped charge variation can be approximated by a first order exponential function. The amount of trapped charge presents enhanced values at the beginning of aging at lower temperatures (80 °C and 100 °C). This suggests the diffusion of cross-linking by-products to the surface of sample that acts as traps for injected electrons. The oxidation which is a very important form of XLPE degradation has an effect at the advanced stage of the aging process. For higher temperatures (120 °C and 140 °C), the taken part process in the evolution of the trapped charge is the crystallinity increase at the beginning of aging leading to the trapped charge decreasing, and the polar groups generated by thermo-oxidation process at the end of aging leading to the trapped charge increase. Variations of leakage current according to the aging time have quite similar trends with the dielectric losses factor and consequently some correlations must be made between charging mechanisms and the electrical behaviour of XLPE under thermal aging.

Performance impact of dynamic surface coatings on polymeric insulator-based dielectrophoretic particle separators.

PubMed

Davalos, Rafael V; McGraw, Gregory J; Wallow, Thomas I; Morales, Alfredo M; Krafcik, Karen L; Fintschenko, Yolanda; Cummings, Eric B; Simmons, Blake A

2008-02-01

Efficient and robust particle separation and enrichment techniques are critical for a diverse range of lab-on-a-chip analytical devices including pathogen detection, sample preparation, high-throughput particle sorting, and biomedical diagnostics. Previously, using insulator-based dielectrophoresis (iDEP) in microfluidic glass devices, we demonstrated simultaneous particle separation and concentration of various biological organisms, polymer microbeads, and viruses. As an alternative to glass, we evaluate the performance of similar iDEP structures produced in polymer-based microfluidic devices. There are numerous processing and operational advantages that motivate our transition to polymers such as the availability of numerous innate chemical compositions for tailoring performance, mechanical robustness, economy of scale, and ease of thermoforming and mass manufacturing. The polymer chips we have evaluated are fabricated through an injection molding process of the commercially available cyclic olefin copolymer Zeonor 1060R. This publication is the first to demonstrate insulator-based dielectrophoretic biological particle differentiation in a polymeric device injection molded from a silicon master. The results demonstrate that the polymer devices achieve the same performance metrics as glass devices. We also demonstrate an effective means of enhancing performance of these microsystems in terms of system power demand through the use of a dynamic surface coating. We demonstrate that the commercially available nonionic block copolymer surfactant, Pluronic F127, has a strong interaction with the cyclic olefin copolymer at very low concentrations, positively impacting performance by decreasing the electric field necessary to achieve particle trapping by an order of magnitude. The presence of this dynamic surface coating, therefore, lowers the power required to operate such devices and minimizes Joule heating. The results of this study demonstrate that iDEP polymeric microfluidic devices with surfactant coatings provide an affordable engineering strategy for selective particle enrichment and sorting.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schroeder, Herbert

2015-06-07

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by themore » applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide materials; the barriers for electrons and holes at the interfaces simulating different electrode materials; the temperature. The main results and conclusions are: (1) For a single type of trap present only (donor-like or acceptor-like), none of the simulated current density curves shows the expected behavior of the PFE and in most cases within the tested parameter field the effect of PFE is negligibly small. (2) For both types of traps present (compensation) only in the case of exact compensation, the expected slope in the PF-plot was nearly found for a wider range of the applied electric field, but for a very small range of the tested parameter field because of the very restricting additional conditions: first, the quasi-fermi level of the current controlling particle (electrons or holes) has to be 0.1 to 0.5 eV closer to the respective band limit than the zero-field energy level of the respective traps and, second, the compensating trap energy level has to be shallow. The conclusion from all these results is: the observation of the PFE as dominating current mechanism in MIM stacks with thin dielectric (oxide) films (typically 30 nm) is rather improbable!.« less

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

2016-09-01

The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance-voltage (C-V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C-V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C-V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C-V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madhukar, M. S.; Martovetsky, N. N.

Large superconducting electromagnets used in fusion reactors utilize a large amount of glass/epoxy composite for electrical insulation and mechanical and thermal strengths. Moreover, the manufacture of these magnets involves wrapping each superconducting cable bundle with dry glass cloth followed by the vacuum-assisted resin transfer molding of the entire magnet. Due to their enormous size (more than 100 tons), it requires more than 40 h for resin impregnation and the subsequent pressure cycles to ensure complete impregnation and removal of any trapped air pockets. Diglycidyl ether of bisphenol F epoxy resin cross-linked with methyltetrahydrophthalic anhydride with an accelerator has been shownmore » to be a good candidate for use in composite parts requiring long impregnation cycles. Viscosity, gel time, and glass transition temperature of four resin-blends of diglycidyl ether of bisphenol F resin system were monitored as a function of time and temperature with an objective to find the blend that provides a working window longer than 40h at low viscosity without lowering its glass transition temperature. A resin-blend in the weight ratios of resin:hardener:accelerator=100:82:0.125 is shown to provide more than 60h at low resin viscosity while maintaining the same glass transition temperature as obtained with previously used resin-blends, based on the results.« less

A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

2015-11-01

This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

Band structure dynamics in indium wires

NASA Astrophysics Data System (ADS)

Chávez-Cervantes, M.; Krause, R.; Aeschlimann, S.; Gierz, I.

2018-05-01

One-dimensional indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below ˜100 K due to the formation of a charge density wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photoemission spectroscopy with extreme ultraviolet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within ˜660 fs, which is a fraction of the amplitude mode period. The long lifetime of the transient state (>100 ps) is attributed to trapping in a metastable state in accordance with previous work.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.

PubMed

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-05-13

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

NASA Astrophysics Data System (ADS)

Balliou, A.; Douvas, A. M.; Normand, P.; Tsikritzis, D.; Kennou, S.; Argitis, P.; Glezos, N.

2014-10-01

In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW12O403-, as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

Fabrication of a Mechanically Robust Carbon Nanofiber Foam

DTIC Science & Technology

2015-06-01

Erlenmeyer exhaust trap utilizing zeolite and permanganate . ........................ 11   Figure 9.   Early CFF experimental mold...containing zeolite and permanganate to dilute the exhaust gases and trap unreacted ethylene prior to their release. Figure 7. MKS mass flow...controller (model MKS 647a). Figure 8. Erlenmeyer exhaust trap utilizing zeolite and permanganate . 12 c. Gas Mixture A flow of pure compressed

One-step fabrication of nanostructure-covered microstructures using selective aluminum anodization based on non-uniform electric field

NASA Astrophysics Data System (ADS)

Park, Yong Min; Kim, Byeong Hee; Seo, Young Ho

2016-06-01

This paper presents a selective aluminum anodization technique for the fabrication of microstructures covered by nanoscale dome structures. It is possible to fabricate bulging microstructures, utilizing the different growth rates of anodic aluminum oxide in non-uniform electric fields, because the growth rate of anodic aluminum oxide depends on the intensity of electric field, or current density. After anodizing under a non-uniform electric field, bulging microstructures covered by nanostructures were fabricated by removing the residual aluminum layer. The non-uniform electric field induced by insulative micropatterns was estimated by computational simulations and verified experimentally. Utilizing computational simulations, the intensity profile of the electric field was calculated according to the ratio of height and width of the insulative micropatterns. To compare computational simulation results and experimental results, insulative micropatterns were fabricated using SU-8 photoresist. The results verified that the shape of the bottom topology of anodic alumina was strongly dependent on the intensity profile of the applied electric field, or current density. The one-step fabrication of nanostructure-covered microstructures can be applied to various fields, such as nano-biochip and nano-optics, owing to its simplicity and cost effectiveness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Tao, E-mail: st@mail.iee.ac.cn; Yang, Wenjin; Zhang, Cheng

Polymer materials, such as polymethylmethacrylate (PMMA), are widely used as insulators in vacuum. The insulating performance of a high-voltage vacuum system is mainly limited by surface flashover of the insulators rather than bulk breakdown. Non-thermal plasmas are an efficient method to modify the chemical and physical properties of polymer material surfaces, and enhance the surface insulating performance. In this letter, an atmospheric-pressure dielectric barrier discharge is used to treat the PMMA surface to improve the surface flashover strength in vacuum. Experimental results indicate that the plasma treatment method using Ar and CF{sub 4} (10:1) as the working gas can etchmore » the PMMA surface, introduce fluoride groups to the surface, and then alter the surface characteristics of the PMMA. The increase in the surface roughness can introduce physical traps that can capture free electrons, and the fluorination can enhance the charge capturing ability. The increase in the surface roughness and the introduction of the fluoride groups can enhance the PMMA hydrophobic ability, improve the charge capturing ability, decrease the secondary electron emission yield, increase the surface resistance, and improve the surface flashover voltage in vacuum.« less

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Molecular control of pentacene/ZnO photoinduced charge transfer

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Paoprasert, Peerasak; Franking, Ryan; Hamers, Robert J.; Gopalan, Padma; Evans, Paul G.

2011-03-01

Photoinduced charge transfer modifies the device properties of illuminated pentacene field effect transistors (FETs) incorporating ZnO quantum dots at the gate insulator/pentacene interface. The transferred charge is trapped on electronic states associated with the ZnO quantum dots, with a steady state population approximately proportional to the rate of organic-inorganic charge transfer. Trapped charge shifts the threshold voltage of the FETs, providing the means to evaluate the rate of organic/inorganic charge transfer and the effects of interface modification. Monolayers of the wide-gap alkane stearic acid and the conjugated oligomer terthiophene attached to the ZnO suppress or permit charge transfer, respectively.

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Simulation of Space Charge Dynamic in Polyethylene Under DC Continuous Electrical Stress

NASA Astrophysics Data System (ADS)

Boukhari, Hamed; Rogti, Fatiha

2016-10-01

The space charge dynamic plays a very important role in the aging and breakdown of polymeric insulation materials under high voltage. This is due to the intensification of the local electric field and the attendant chemical-mechanical effects in the vicinity around the trapped charge. In this paper, we have investigated the space charge dynamic in low-density polyethylene under high direct-current voltage, which is evaluated by experimental conditions. The evaluation is on the basis of simulation using a bipolar charge transport model consisting of charge injection, transports, trapping, detrapping, and recombination phenomena. The theoretical formulation of the physical problem is based on the Poisson, the continuity, and the transport equations. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges (net charge density, mobile and trapped of electron density, mobile hole density), conduction and displacement current densities, and the external current. The result shows the appearance of the negative packet-like space charge with a large amount of the bulk under the dc electric field of 100 kV/mm, and the induced distortion of the electric field is largely near to the anode, about 39% higher than the initial electric field applied.

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Narendra; Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur-208016; Kumar, Jitendra

The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity withmore » the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.« less

Studies of Surface Charging of Polymers by Indirect Triboelectrification

NASA Astrophysics Data System (ADS)

Mantovani, James; Calle, Carlos; Groop, Ellen; Buehler, Martin

2001-03-01

Charge is known to develop on the surface of an insulating polymer by frictional charging through direct physical contact with another material. We will present results of recent triboelectrification studies of polymer surfaces that utilized an indirect method of frictional charging. This method first involves placing a grounded thin metal foil in stationary contact over the polymer surface. The exposed metal foil is then rubbed with the surface of the material that generates the triboelectric charge. Data is presented for five types of polymers: fiberglass/epoxy, polycarbonate (Lexan), polytetraflouroethylene (Teflon), Rulon J, and polymethylmethacrylate (PMMA, Lucite). The amount of charge that develops on an insulator's surface is measured using the MECA Electrometer, which was developed jointly by NASA Kennedy Space Center and the Jet Propulsion Laboratory to study the electrostatic properties of soil on the surface of Mars. Even though the insulator's surface is electrically shielded from the rubbing material by the grounded metal foil, charge measurements obtained by the MECA Electrometer after the metal foil is separated from the insulator's surface reveal that the insulator's surface does accumulate charge by indirect frictional charging. A possible explanation of the observations will be presented based on a simple contact barrier model.

Microfabricated Waveguide Atom Traps.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jau, Yuan-Yu

A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading coldmore » atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.« less

Look beyond the Obvious Energy Savers to Conserve School Dollars.

ERIC Educational Resources Information Center

Wisniewski, Adrian T.

1985-01-01

Describes a Milwaukee, Wisconsin, school system's energy conservation project that insulated utility tunnels and pipes in two schools. Energy savings will pay back the insulation cost in less than two years. (MD)

Discharge pulse phenomenology

NASA Technical Reports Server (NTRS)

Frederickson, A. R.

1985-01-01

A model was developed which places radiation induced discharge pulse results into a unified conceptual framework. Only two phenomena are required to interpret all space and laboratory results: (1) radiation produces large electrostatic fields inside insulators via the trapping of a net space charge density; and (2) the electrostatic fields initiate discharge streamer plasmas similar to those investigated in high voltage electrical insulation materials; these streamer plasmas generate the pulsing phenomena. The apparent variability and diversity of results seen is an inherent feature of the plasma streamer mechanism acting in the electric fields which is created by irradiation of the dielectrics. The implications of the model are extensive and lead to constraints over what can be done about spacecraft pulsing.

The Optimal Level of Insulation in a Home Attic

ERIC Educational Resources Information Center

Martin, Paul; Premadasa, Kirthi

2012-01-01

The project models the conductive heat loss through the ceiling of a home. Students are led through a sequence of tasks from measuring the area and insulation status of a home to developing several functions leading to a net savings function where the depth of insulation is the input. At this point students use calculus or a graphing utility to…

The use (and misuse) of sediment traps in coral reef environments: theory, observations, and suggested protocols

NASA Astrophysics Data System (ADS)

Storlazzi, C. D.; Field, M. E.; Bothner, M. H.

2011-03-01

Sediment traps are commonly used as standard tools for monitoring "sedimentation" in coral reef environments. In much of the literature where sediment traps were used to measure the effects of "sedimentation" on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about "sedimentation" on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height ( H), trap mouth diameter ( D), the height of the trap mouth above the substrate ( z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

The use (and misuse) of sediment traps in coral reef environments: Theory, observations, and suggested protocols

USGS Publications Warehouse

Storlazzi, C.D.; Field, M.E.; Bothner, Michael H.

2011-01-01

Sediment traps are commonly used as standard tools for monitoring “sedimentation” in coral reef environments. In much of the literature where sediment traps were used to measure the effects of “sedimentation” on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about “sedimentation” on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height (H), trap mouth diameter (D), the height of the trap mouth above the substrate (z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

Semi-flexible gas-insulated transmission line using electric field stress shields

DOEpatents

Cookson, Alan H.; Dale, Steinar J.; Bolin, Philip C.

1982-12-28

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections.

Impacting device for testing insulation

NASA Technical Reports Server (NTRS)

Redmon, J. W. (Inventor)

1984-01-01

An electro-mechanical impacting device for testing the bonding of foam insulation to metal is descirbed. The device lightly impacts foam insulation attached to metal to determine whether the insulation is properly bonded to the metal and to determine the quality of the bond. A force measuring device, preferably a load cell mounted on the impacting device, measures the force of the impact and the duration of the time the hammer head is actually in contact with the insulation. The impactor is designed in the form of a handgun having a driving spring which can propel a plunger forward to cause a hammer head to impact the insulation. The device utilizes a trigger mechanism which provides precise adjustements, allowing fireproof operation.

Insulator-based dielectrophoresis of microorganisms: theoretical and experimental results.

PubMed

Moncada-Hernandez, Hector; Baylon-Cardiel, Javier L; Pérez-González, Victor H; Lapizco-Encinas, Blanca H

2011-09-01

Dielectrophoresis (DEP) is the motion of particles due to polarization effects in nonuniform electric fields. DEP has great potential for handling cells and is a non-destructive phenomenon. It has been utilized for different cell analysis, from viability assessments to concentration enrichment and separation. Insulator-based DEP (iDEP) provides an attractive alternative to conventional electrode-based systems; in iDEP, insulating structures are used to generate nonuniform electric fields, resulting in simpler and more robust devices. Despite the rapid development of iDEP microdevices for applications with cells, the fundamentals behind the dielectrophoretic behavior of cells has not been fully elucidated. Understanding the theory behind iDEP is necessary to continue the progress in this field. This work presents the manipulation and separation of bacterial and yeast cells with iDEP. A computational model in COMSOL Multiphysics was employed to predict the effect of direct current-iDEP on cells suspended in a microchannel containing an array of insulating structures. The model allowed predicting particle behavior, pathlines and the regions where dielectrophoretic immobilization should occur. Experimental work was performed at the same operating conditions employed with the model and results were compared, obtaining good agreement. This is the first report on the mathematical modeling of the dielectrophoretic response of yeast and bacterial cells in a DC-iDEP microdevice. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of buffer layer on photoresponse of MoS2 phototransistor

NASA Astrophysics Data System (ADS)

Miyamoto, Yuga; Yoshikawa, Daiki; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji

2018-06-01

An atomically thin MoS2 field-effect transistor (FET) is expected as an ultrathin photosensor with high sensitivity. However, a persistent photoconductivity phenomenon prevents high-speed photoresponse. Here, we investigate the photoresponse of a MoS2 FET with a thin Al2O3 buffer layer on a SiO2 gate insulator. The application of a 2-nm-thick Al2O3 buffer layer greatly improves not only the steady state properties but also the response speed from 1700 to 0.2 s. These experimental results are well explained by the random localized potential fluctuation model combined with the model based on the recombination of the bounded electrons around the trapped hole.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

PubMed

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

NASA Astrophysics Data System (ADS)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Detection and localization of building insulation faults using optical-fiber DTS system

NASA Astrophysics Data System (ADS)

Papes, Martin; Liner, Andrej; Koudelka, Petr; Siska, Petr; Cubik, Jakub; Kepak, Stanislav; Jaros, Jakub; Vasinek, Vladimir

2013-05-01

Nowadays the trends in the construction industry are changing at an incredible speed. The new technologies are still emerging on the market. Sphere of building insulation is not an exception as well. One of the major problems in building insulation is usually its failure, whether caused by unwanted mechanical intervention or improper installation. The localization of these faults is quite difficult, often impossible without large intervention into the construction. As a proper solution for this problem might be utilization of Optical-Fiber DTS system based on stimulated Raman scattering. Used DTS system is primary designed for continuous measurement of the temperature along the optical fiber. This system is using standard optical fiber as a sensor, which brings several advantages in its application. First, the optical fiber is relatively inexpensive, which allows to cover a quite large area for a small cost. The other main advantages of the optical fiber are electromagnetic resistance, small size, safety operation in inflammable or explosive area, easy installation, etc. This article is dealing with the detection and localization of building insulation faults using mentioned system.

The effects of γ-ray on charging behaviour using polyimide

NASA Astrophysics Data System (ADS)

Qin, Sichen; Tu, Youping; Tan, Tian; Wang, Shaohe; Yuan, Zhikang; Wang, Cong; Li, Laifeng; Wu, Zhixiong

2018-06-01

Insulation material is a key component of electrical equipment in satellites; its electrical properties determine the reliability and lifetime of the whole satellite. High-energy radioactive rays in space affect the molecular structure of the polymeric insulating materials. Under the action of plasma, high energy particles, along with the magnetic fields experienced in orbits, electric charges get injected into and trapped by the insulating material creating distortions in the electric field and even electrostatic discharges. Polyimides have been widely used for insulation in spacecraft. Choosing Co-60 gamma ray with irradiation doses of 1 MGy and 5 MGy to simulate the radiation environment of space, we investigated the effect of radiation on charging behaviour. The thermal stimulated current (TSC) from a high electric field over a wide range of temperatures was measured from which the activation energy was calculated. These results for the two sources show that the percentage increase in total charge was 133.3% and 119.4%. The γ, β 3, and α charge peaks of specimens after an irradiation dose of 1 MGy rose. In comparison, the β 2 peak of the 5 MGy-dosed specimens was enhanced. Also, there is almost no change in the γ, β 3, and α peaks. To understand the mechanism behind the TSC changes, the resulting physicochemical characteristics of an irradiated specimen were observed employing various analyses of chemical characteristics (x-ray photoelectron spectroscopy, differential scanning calorimetry and x-ray diffraction). Compared with the non-dosed specimen, the relative content of C–N and the glass transition temperature of the 1 MGy sample decreased, and the crystallinity increased, thus increasing the γ and α peak intensities. Compared with the 1 MGy sample, only the glass transition temperature had risen, thereby enhancing the β peak intensity. With the foregoing, a theoretical base for the selection and modification of insulation materials for spacecraft is provided.

Semi-flexible gas-insulated transmission line using electric field stress shields

DOEpatents

Cookson, A.H.; Dale, S.J.; Bolin, P.C.

1982-12-28

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections. 10 figs.

Technology Solutions Case Study: Excavationless: Exterior-Side Foundation Insulation for Existing Homes

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. This project describes an innovative, minimally invasive foundation insulation upgrade technique on an existing home that uses hydrovac excavation technology combined with a liquid insulating foam. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features,more » utility meters, and landscaping would be minimal or non-existent in an excavationless process.« less

Nanowire-based detector

DOEpatents

Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

2014-06-24

Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Yang, Jianwen; Liao, Po-Yung; Chang, Ting-Chang; Chen, Bo-Wei; Huang, Hui-Chun; Su, Wan-Ching; Chiang, Hsiao-Cheng; Zhang, Qun

2017-04-01

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with an etching-stop layer (ESL) exhibit an anomalous negative shift of threshold voltage (Vth) under positive bias temperature stress. TFTs with wider and shorter channels show a clear hump phenomenon, resulting from the existence of both main channels and parasitic channels. The electrons trapped in the gate insulator are responsible for the positive shift in the main channel characteristics. The electrons trapped near the IGZO edges and the holes injected into the ESL layer above InGaZnO (IGZO) jointly determine the shift of the parasitic TFT performance.

Electromagnetic micropores: fabrication and operation.

PubMed

Basore, Joseph R; Lavrik, Nickolay V; Baker, Lane A

2010-12-21

We describe the fabrication and characterization of electromagnetic micropores. These devices consist of a micropore encompassed by a microelectromagnetic trap. Fabrication of the device involves multiple photolithographic steps, combined with deep reactive ion etching and subsequent insulation steps. When immersed in an electrolyte solution, application of a constant potential across the micropore results in an ionic current. Energizing the electromagnetic trap surrounding the micropore produces regions of high magnetic field gradients in the vicinity of the micropore that can direct motion of a ferrofluid onto or off of the micropore. This results in dynamic gating of the ion current through the micropore structure. In this report, we detail fabrication and characterize the electrical and ionic properties of the prepared electromagnetic micropores.

Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

NASA Astrophysics Data System (ADS)

Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

2018-05-01

Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

PubMed

Lee, Wook-Jae; Kim, Hyunseok; You, Jong-Bum; Huffaker, Diana L

2017-08-25

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm 2 , which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7 × 7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

Characteristics of trapped proton anisotropy at Space Station Freedom altitudes

NASA Technical Reports Server (NTRS)

Armstrong, T. W.; Colborn, B. L.; Watts, J. W.

1990-01-01

The ionizing radiation dose for spacecraft in low-Earth orbit (LEO) is produced mainly by protons trapped in the Earth's magnetic field. Current data bases describing this trapped radiation environment assume the protons to have an isotropic angular distribution, although the fluxes are actually highly anisotropic in LEO. The general nature of this directionality is understood theoretically and has been observed by several satellites. The anisotropy of the trapped proton exposure has not been an important practical consideration for most previous LEO missions because the random spacecraft orientation during passage through the radiation belt 'averages out' the anisotropy. Thus, in spite of the actual exposure anisotropy, cumulative radiation effects over many orbits can be predicted as if the environment were isotropic when the spacecraft orientation is variable during exposure. However, Space Station Freedom will be gravity gradient stabilized to reduce drag, and, due to this fixed orientation, the cumulative incident proton flux will remain anisotropic. The anisotropy could potentially influence several aspects of Space Station design and operation, such as the appropriate location for radiation sensitive components and experiments, location of workstations and sleeping quarters, and the design and placement of radiation monitors. Also, on-board mass could possible be utilized to counteract the anisotropy effects and reduce the dose exposure. Until recently only omnidirectional data bases for the trapped proton environment were available. However, a method to predict orbit-average, angular dependent ('vector') trapped proton flux spectra has been developed from the standard omnidirectional trapped proton data bases. This method was used to characterize the trapped proton anisotropy for the Space Station orbit (28.5 degree inclination, circular) in terms of its dependence on altitude, solar cycle modulation (solar minimum vs. solar maximum), shielding thickness, and radiation effect (silicon rad and rem dose).

Solar pond

NASA Technical Reports Server (NTRS)

Miller, C. G.; Stephens, J. B. (Inventor)

1978-01-01

Shallow pools of liquid to collect low-temperature solar generated thermal energy are described. Narrow elongated trenches, grouped together over a wide area, are lined with a heat-absorbing black liner. The heat-absorbing liquid is kept separate from the thermal energy removing fluid by means such as clear polyethylene material. The covering for the pond may be a fluid or solid. If the covering is a fluid, fire fighting foam, continuously generated, or siloons are used to keep the surface covering clean and insulated. If the thermal energy removing fluid is a gas, a fluid insulation layer contained in a flat polyethlene tubing is used to cover the pond. The side of the tube directed towards the sun is treated to block out ultraviolet radiation and trap in infrared radiation.

Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

NASA Astrophysics Data System (ADS)

Tsia, J. M.; Ling, C. C.; Beling, C. D.; Fung, S.

2002-09-01

A plus-or-minus100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (Ea=0.81plus-or-minus0.15 eV) and EL6 (Ea=0.30plus-or-minus0.12 eV) have been identified.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawase, Kazumasa; Uehara, Yasushi; Teramoto, Akinobu

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using Ar/O{sub 2} plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO{sub 2} films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO{sub 2} films were increased near the SiO{sub 2} surface. The densities of the carrier trap centers in these films weremore » decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO{sub 2} film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.« less

Heat transfer at a sapphire - indium interface in the 30 mK - 300 mK temperature range

NASA Astrophysics Data System (ADS)

Liberadzka, J.; Koettig, T.; Bremer, J.; van der Post, C. C. W.; ter Brake, H. J. M.

2017-02-01

Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth’s gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper - indium - sapphire - indium - copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.

Exciton-polariton trapping and potential landscape engineering

NASA Astrophysics Data System (ADS)

Schneider, C.; Winkler, K.; Fraser, M. D.; Kamp, M.; Yamamoto, Y.; Ostrovskaya, E. A.; Höfling, S.

2017-01-01

Exciton-polaritons in semiconductor microcavities have become a model system for the studies of dynamical Bose-Einstein condensation, macroscopic coherence, many-body effects, nonclassical states of light and matter, and possibly quantum phase transitions in a solid state. These low-mass bosonic quasiparticles can condense at comparatively high temperatures up to 300 K, and preserve the fundamental properties of the condensate, such as coherence in space and time domain, even when they are out of equilibrium with the environment. Although the presence of a confining potential is not strictly necessary in order to observe Bose-Einstein condensation, engineering of the polariton confinement is a key to controlling, shaping, and directing the flow of polaritons. Prototype polariton-based optoelectronic devices rely on ultrafast photon-like velocities and strong nonlinearities exhibited by polaritons, as well as on their tailored confinement. Nanotechnology provides several pathways to achieving polariton confinement, and the specific features and advantages of different methods are discussed in this review. Being hybrid exciton-photon quasiparticles, polaritons can be trapped via their excitonic as well as photonic component, which leads to a wide choice of highly complementary trapping techniques. Here, we highlight the almost free choice of the confinement strengths and trapping geometries that provide powerful means for control and manipulation of the polariton systems both in the semi-classical and quantum regimes. Furthermore, the possibilities to observe effects of the polariton blockade, Mott insulator physics, and population of higher-order energy bands in sophisticated lattice potentials are discussed. Observation of such effects could lead to realization of novel polaritonic non-classical light sources and quantum simulators.

Technology for On-Chip Qubit Control with Microfabricated Surface Ion Traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Highstrete, Clark; Scott, Sean Michael; Nordquist, Christopher D.

2013-11-01

Trapped atomic ions are a leading physical system for quantum information processing. However, scalability and operational fidelity remain limiting technical issues often associated with optical qubit control. One promising approach is to develop on-chip microwave electronic control of ion qubits based on the atomic hyperfine interaction. This project developed expertise and capabilities at Sandia toward on-chip electronic qubit control in a scalable architecture. The project developed a foundation of laboratory capabilities, including trapping the 171Yb + hyperfine ion qubit and developing an experimental microwave coherent control capability. Additionally, the project investigated the integration of microwave device elements with surface ionmore » traps utilizing Sandia’s state-of-the-art MEMS microfabrication processing. This effort culminated in a device design for a multi-purpose ion trap experimental platform for investigating on-chip microwave qubit control, laying the groundwork for further funded R&D to develop on-chip microwave qubit control in an architecture that is suitable to engineering development.« less

DGEBF epoxy blends for use in the resin impregnation of extremely large composite parts

DOE PAGES

Madhukar, M. S.; Martovetsky, N. N.

2015-01-16

Large superconducting electromagnets used in fusion reactors utilize a large amount of glass/epoxy composite for electrical insulation and mechanical and thermal strengths. Moreover, the manufacture of these magnets involves wrapping each superconducting cable bundle with dry glass cloth followed by the vacuum-assisted resin transfer molding of the entire magnet. Due to their enormous size (more than 100 tons), it requires more than 40 h for resin impregnation and the subsequent pressure cycles to ensure complete impregnation and removal of any trapped air pockets. Diglycidyl ether of bisphenol F epoxy resin cross-linked with methyltetrahydrophthalic anhydride with an accelerator has been shownmore » to be a good candidate for use in composite parts requiring long impregnation cycles. Viscosity, gel time, and glass transition temperature of four resin-blends of diglycidyl ether of bisphenol F resin system were monitored as a function of time and temperature with an objective to find the blend that provides a working window longer than 40h at low viscosity without lowering its glass transition temperature. A resin-blend in the weight ratios of resin:hardener:accelerator=100:82:0.125 is shown to provide more than 60h at low resin viscosity while maintaining the same glass transition temperature as obtained with previously used resin-blends, based on the results.« less

ac aging and space-charge characteristics in low-density polyethylene polymeric insulation

NASA Astrophysics Data System (ADS)

Chen, G.; Fu, M.; Liu, X. Z.; Zhong, L. S.

2005-04-01

In the present work efforts have been made to investigate the influence of ac aging on space-charge dynamics in low-density polyethylene (LDPE). LDPE films with 200 μm were aged under various electric stress levels at 50 Hz for various times at ambient temperature. Space-charge dynamics in the samples after aging were monitored using the pulsed electroacoustic technique. It has been revealed that the space charge under ac aging conditions is related to the level of the applied field, duration of the voltage application, as well as the electrode materials. By comparing with the results of unaged sample the results from aged sample provide a direct evidence of changing trapping characteristics after ac aging. Negative space charge is present in the bulk of the material and the total amount of charge increases with the aging time. The amount of charge increases with the applied field. Charge decay test indicates that the charges are captured in deep traps. These deep traps are believed to form during the aging and related to change caused by injected charge. By using different electrode materials such as gold, brass alloy, and polyethylene loaded with carbon black, it was found that the electrode has an important role in the formation of charge, hence subsequent changes caused by charge. The charge dynamics of the aged samples under dc bias differ from the sample without ac aging, indicating changes brought in by ac aging. Chemical analysis by Fourier transform infrared spectroscope and Raman microscope reveals no detectable chemical changes taken place in the bulk of the material after ac aging. Finally, the consequence of the accumulation of space charge under ac conditions on the lifetime of the material has been discussed. The presence of deeply trapped space charge leads to an electric stress enhancement which may shorten the lifetime of the insulation system.

Applications of Atomic Systems in Quantum Simulation, Quantum Computation and Topological Phases of Matter

NASA Astrophysics Data System (ADS)

Wang, Shengtao

The ability to precisely and coherently control atomic systems has improved dramatically in the last two decades, driving remarkable advancements in quantum computation and simulation. In recent years, atomic and atom-like systems have also been served as a platform to study topological phases of matter and non-equilibrium many-body physics. Integrated with rapid theoretical progress, the employment of these systems is expanding the realm of our understanding on a range of physical phenomena. In this dissertation, I draw on state-of-the-art experimental technology to develop several new ideas for controlling and applying atomic systems. In the first part of this dissertation, we propose several novel schemes to realize, detect, and probe topological phases in atomic and atom-like systems. We first theoretically study the intriguing properties of Hopf insulators, a peculiar type of topological insulators beyond the standard classification paradigm of topological phases. Using a solid-state quantum simulator, we report the first experimental observation of Hopf insulators. We demonstrate the Hopf fibration with fascinating topological links in the experiment, showing clear signals of topological phase transitions for the underlying Hamiltonian. Next, we propose a feasible experimental scheme to realize the chiral topological insulator in three dimensions. They are a type of topological insulators protected by the chiral symmetry and have thus far remained unobserved in experiment. We then introduce a method to directly measure topological invariants in cold-atom experiments. This detection scheme is general and applicable to probe of different topological insulators in any spatial dimension. In another study, we theoretically discover a new type of topological gapless rings, dubbed a Weyl exceptional ring, in three-dimensional dissipative cold atomic systems. In the second part of this dissertation, we focus on the application of atomic systems in quantum computation and simulation. Trapped atomic ions are one of the leading platforms to build a scalable, universal quantum computer. The common one-dimensional setup, however, greatly limits the system's scalability. By solving the critical problem of micromotion, we propose a two-dimensional architecture for scalable trapped-ion quantum computation. Hamiltonian tomography for many-body quantum systems is essential for benchmarking quantum computation and simulation. By employing dynamical decoupling, we propose a scalable scheme for full Hamiltonian tomography. The required number of measurements increases only polynomially with the system size, in contrast to an exponential scaling in common methods. Finally, we work toward the goal of demonstrating quantum supremacy. A number of sampling tasks, such as the boson sampling problem, have been proposed to be classically intractable under mild assumptions. An intermediate quantum computer can efficiently solve the sampling problem, but the correct operation of the device is not known to be classically verifiable. Toward practical verification, we present an experimental friendly scheme to extract useful and robust information from the quantum boson samplers based on coarse-grained measurements. In a separate study, we introduce a new model built from translation-invariant Ising-interacting spins. This model possesses several advantageous properties, catalyzing the ultimate experimental demonstration of quantum supremacy.

49 CFR 178.275 - Specification for UN Portable Tanks intended for the transportation of liquid and solid hazardous...

Code of Federal Regulations, 2012 CFR

2012-10-01

... external heat. Fusible elements must not be utilized on portable tanks with a test pressure which exceeds 2... conductance of the insulation, in kW m −2 K −1, at 38 °C (100 °F); and t = actual temperature of the hazardous... given in this paragraph (i)(2)(i)(A) for insulated shells may only be used if the insulation is in...

49 CFR 178.275 - Specification for UN Portable Tanks intended for the transportation of liquid and solid hazardous...

Code of Federal Regulations, 2014 CFR

2014-10-01

... external heat. Fusible elements must not be utilized on portable tanks with a test pressure which exceeds 2... conductance of the insulation, in kW m −2 K −1, at 38 °C (100 °F); and t = actual temperature of the hazardous... given in this paragraph (i)(2)(i)(A) for insulated shells may only be used if the insulation is in...

49 CFR 178.275 - Specification for UN Portable Tanks intended for the transportation of liquid and solid hazardous...

Code of Federal Regulations, 2013 CFR

2013-10-01

... external heat. Fusible elements must not be utilized on portable tanks with a test pressure which exceeds 2... conductance of the insulation, in kW m −2 K −1, at 38 °C (100 °F); and t = actual temperature of the hazardous... given in this paragraph (i)(2)(i)(A) for insulated shells may only be used if the insulation is in...

49 CFR 178.275 - Specification for UN Portable Tanks intended for the transportation of liquid and solid hazardous...

Code of Federal Regulations, 2011 CFR

2011-10-01

... external heat. Fusible elements must not be utilized on portable tanks with a test pressure which exceeds 2... conductance of the insulation, in kW m −2 K −1, at 38 °C (100 °F); and t = actual temperature of the hazardous... given in this paragraph (i)(2)(i)(A) for insulated shells may only be used if the insulation is in...

49 CFR 178.275 - Specification for UN Portable Tanks intended for the transportation of liquid and solid hazardous...

Code of Federal Regulations, 2010 CFR

2010-10-01

... external heat. Fusible elements must not be utilized on portable tanks with a test pressure which exceeds 2... conductance of the insulation, in kW m −2 K −1, at 38 °C (100 °F); and t = actual temperature of the hazardous... given in this paragraph (i)(2)(i)(A) for insulated shells may only be used if the insulation is in...

Application of the Finite Elemental Analysis to Modeling Temperature Change of the Vaccine in an Insulated Packaging Container during Transport.

PubMed

Ge, Changfeng; Cheng, Yujie; Shen, Yan

2013-01-01

This study demonstrated an attempt to predict temperatures of a perishable product such as vaccine inside an insulated packaging container during transport through finite element analysis (FEA) modeling. In order to use the standard FEA software for simulation, an equivalent heat conduction coefficient is proposed and calculated to describe the heat transfer of the air trapped inside the insulated packaging container. The three-dimensional, insulated packaging container is regarded as a combination of six panels, and the heat flow at each side panel is a one-dimension diffusion process. The transit-thermal analysis was applied to simulate the heat transition process from ambient environment to inside the container. Field measurements were carried out to collect the temperature during transport, and the collected data were compared to the FEA simulation results. Insulated packaging containers are used to transport temperature-sensitive products such as vaccine and other pharmaceutical products. The container is usually made of an extruded polystyrene foam filled with gel packs. World Health Organization guidelines recommend that all vaccines except oral polio vaccine be distributed in an environment where the temperature ranges between +2 to +8 °C. The primary areas of concern in designing the packaging for vaccine are how much of the foam thickness and gel packs should be used in order to keep the temperature in a desired range, and how to prevent the vaccine from exposure to freezing temperatures. This study uses numerical simulation to predict temperature change within an insulated packaging container in vaccine cold chain. It is our hope that this simulation will provide the vaccine industries with an alternative engineering tool to validate vaccine packaging and project thermal equilibrium within the insulated packaging container.

Sulfur oxide adsorbents and emissions control

DOEpatents

Li, Liyu [Richland, WA; King, David L [Richland, WA

2006-12-26

High capacity sulfur oxide absorbents utilizing manganese-based octahedral molecular sieve (Mn--OMS) materials are disclosed. An emissions reduction system for a combustion exhaust includes a scrubber 24 containing these high capacity sulfur oxide absorbents located upstream from a NOX filter 26 or particulate trap.

Low-Cost Bio-Based Phase Change Materials as an Energy Storage Medium in Building Envelopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Kaushik; Abhari, Mr. Ramin; Shukla, Dr. Nitin

2015-01-01

A promising approach to increasing the energy efficiency of buildings is the implementation of phase change material (PCM) in building envelope systems. Several studies have reported the energy saving potential of PCM in building envelopes. However, wide application of PCMs in building applications has been inhibited, in part, by their high cost. This article describes a novel paraffin product made of naturally occurring fatty acids/glycerides trapped into high density polyethylene (HDPE) pellets and its performance in a building envelope application, with the ultimate goal of commercializing a low-cost PCM platform. The low-cost PCM pellets were mixed with cellulose insulation, installedmore » in external walls and field-tested under natural weatherization conditions for a period of several months. In addition, several PCM samples and PCM-cellulose samples were prepared under controlled conditions for laboratory-scale testing. The laboratory tests were performed to determine the phase change properties of PCM-enhanced cellulose insulation both at microscopic and macroscopic levels. This article presents the data and analysis from the exterior test wall and the laboratory-scale test data. PCM behavior is influenced by the weather and interior conditions, PCM phase change temperature and PCM distribution within the wall cavity, among other factors. Under optimal conditions, the field data showed up to 20% reduction in weekly heat transfer through an external wall due to the PCM compared to cellulose-only insulation.« less

Evaluation of Less-Flammable Insulation Fluids and Fire-Prevention Guidance for Transformers

NASA Astrophysics Data System (ADS)

Yamagishi, Akira; Sugawa, Osami

This paper concerns the definition and evaluation of less-flammable of insulation fluids for transformers. In particular it focuses on the ISO5660 cone calorimeter method, which is widely used as an evaluation method for the less-flammable of solids, and proposes that such method is also valid for quantitative evaluation of the less-flammable of insulating fluids. Quantifying the combustion characteristics of insulation fluids and analyzing the causes of fires can be said to be the first step toward implementing appropriate safety measures that will render electric utility equipment more fire retardant or fireproof in the future.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Switching Oxide Traps

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.

2003-01-01

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

An activity-based near-infrared glucuronide trapping probe for imaging β-glucuronidase expression in deep tissues.

PubMed

Cheng, Ta-Chun; Roffler, Steve R; Tzou, Shey-Cherng; Chuang, Kuo-Hsiang; Su, Yu-Cheng; Chuang, Chih-Hung; Kao, Chien-Han; Chen, Chien-Shu; Harn, I-Hong; Liu, Kuan-Yi; Cheng, Tian-Lu; Leu, Yu-Ling

2012-02-15

β-glucuronidase is an attractive reporter and prodrug-converting enzyme. The development of near-IR (NIR) probes for imaging of β-glucuronidase activity would be ideal to allow estimation of reporter expression and for personalized glucuronide prodrug cancer therapy in preclinical studies. However, NIR glucuronide probes are not yet available. In this work, we developed two fluorescent probes for detection of β-glucuronidase activity, one for the NIR range (containing IR-820 dye) and the other for the visible range [containing fluorescein isothiocyanate (FITC)], by utilizing a difluoromethylphenol-glucuronide moiety (TrapG) to trap the fluorochromes in the vicinity of the active enzyme. β-glucuronidase-mediated hydrolysis of the glucuronyl bond of TrapG generates a highly reactive alkylating group that facilitates the attachment of the fluorochrome to nucleophilic moieties located near β-glucuronidase-expressing sites. FITC-TrapG was selectively trapped on purified β-glucuronidase or β-glucuronidase-expressing CT26 cells (CT26/mβG) but not on bovine serum albumin or non-β-glucuronidase-expressing CT26 cells used as controls. β-glucuronidase-activated FITC-TrapG did not interfere with β-glucuronidase activity and could label bystander proteins near β-glucuronidase. Both FITC-TrapG and NIR-TrapG specifically imaged subcutaneous CT26/mβG tumors, but only NIR-TrapG could image CT26/mβG tumors transplanted deep in the liver. Thus NIR-TrapG may provide a valuable tool for visualizing β-glucuronidase activity in vivo.

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

NASA Astrophysics Data System (ADS)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Hydrogen disposal investigation for the Space Shuttle launch complex at Vandenberg Air Force Base

NASA Technical Reports Server (NTRS)

Breit, Terry J.; Elliott, George

1987-01-01

The concern of an overpressure condition on the aft end of the Space Shuttle caused by ignition of unburned hydrogen being trapped in the Space Shuttle Main Engine exhaust duct at the Vandenberg AFB launch complex has been investigated for fifteen months. Approximately twenty-five concepts have been reviewed, with four concepts being thoroughly investigated. The four concepts investigated were hydrogen burnoff ignitors (ignitors located throughout the exhaust duct to continuously ignite any unburned hydrogen), jet mixing (utilizing large volumes of high pressure air to ensure complete combustion of the hydrogen), steam inert (utilizing flashing hot water to inert the duct with steam) and open duct concept (design an open duct or above grade J-deflector to avoid trapping hydrogen gas). Extensive studies, analyses and testing were performed at six test sites with technical support from twenty-two major organizations. In December 1986, the Air Force selected the steam inert concept to be utilized at the Vandenberg launch complex and authorized the design effort.

Pseudo-Random Sequence Modifications for Ion Mobility Orthogonal Time of Flight Mass Spectrometry

PubMed Central

Clowers, Brian H.; Belov, Mikhail E.; Prior, David C.; Danielson, William F.; Ibrahim, Yehia; Smith, Richard D.

2008-01-01

Due to the inherently low duty cycle of ion mobility spectrometry (IMS) experiments that sample from continuous ion sources, a range of experimental advances have been developed to maximize ion utilization efficiency. The use of ion trapping mechanisms prior to the ion mobility drift tube has demonstrated significant gains over discrete sampling from continuous sources; however, these technologies have traditionally relied upon a signal averaging to attain analytically relevant signal-to-noise ratios (SNR). Multiplexed (MP) techniques based upon the Hadamard transform offer an alternative experimental approach by which ion utilization efficiency can be elevated to ∼ 50 %. Recently, our research group demonstrated a unique multiplexed ion mobility time-of-flight (MP-IMS-TOF) approach that incorporates ion trapping and can extend ion utilization efficiency beyond 50 %. However, the spectral reconstruction of the multiplexed signal using this experiment approach requires the use of sample-specific weighing designs. Though general weighing designs have been shown to significantly enhance ion utilization efficiency using this MP technique, such weighing designs cannot be applied to all samples. By modifying both the ion funnel trap and the pseudo random sequence (PRS) used for the MP experiment we have eliminated the need for complex weighing matrices. For both simple and complex mixtures SNR enhancements of up to 13 were routinely observed as compared to the SA-IMS-TOF experiment. In addition, this new class of PRS provides a two fold enhancement in ion throughput compared to the traditional HT-IMS experiment. PMID:18311942

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Probing polariton dynamics in trapped ions with phase-coherent two-dimensional spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gessner, Manuel; Schlawin, Frank; Buchleitner, Andreas

2015-06-07

We devise a phase-coherent three-pulse protocol to probe the polariton dynamics in a trapped-ion quantum simulation. In contrast to conventional nonlinear signals, the presented scheme does not change the number of excitations in the system, allowing for the investigation of the dynamics within an N-excitation manifold. In the particular case of a filling factor one (N excitations in an N-ion chain), the proposed interaction induces coherent transitions between a delocalized phonon superfluid and a localized atomic insulator phase. Numerical simulations of a two-ion chain demonstrate that the resulting two-dimensional spectra allow for the unambiguous identification of the distinct phases, andmore » the two-dimensional line shapes efficiently characterize the relevant decoherence mechanism.« less

Imaging Optical Frequencies with 100  μHz Precision and 1.1  μm Resolution.

PubMed

Marti, G Edward; Hutson, Ross B; Goban, Akihisa; Campbell, Sara L; Poli, Nicola; Ye, Jun

2018-03-09

We implement imaging spectroscopy of the optical clock transition of lattice-trapped degenerate fermionic Sr in the Mott-insulating regime, combining micron spatial resolution with submillihertz spectral precision. We use these tools to demonstrate atomic coherence for up to 15 s on the clock transition and reach a record frequency precision of 2.5×10^{-19}. We perform the most rapid evaluation of trapping light shifts and record a 150 mHz linewidth, the narrowest Rabi line shape observed on a coherent optical transition. The important emerging capability of combining high-resolution imaging and spectroscopy will improve the clock precision, and provide a path towards measuring many-body interactions and testing fundamental physics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Driven Bose-Hubbard model with a parametrically modulated harmonic trap

NASA Astrophysics Data System (ADS)

Mann, N.; Bakhtiari, M. Reza; Massel, F.; Pelster, A.; Thorwart, M.

2017-04-01

We investigate a one-dimensional Bose-Hubbard model in a parametrically driven global harmonic trap. The delicate interplay of both the local interaction of the atoms in the lattice and the driving of the global trap allows us to control the dynamical stability of the trapped quantum many-body state. The impact of the atomic interaction on the dynamical stability of the driven quantum many-body state is revealed in the regime of weak interaction by analyzing a discretized Gross-Pitaevskii equation within a Gaussian variational ansatz, yielding a Mathieu equation for the condensate width. The parametric resonance condition is shown to be modified by the atom interaction strength. In particular, the effective eigenfrequency is reduced for growing interaction in the mean-field regime. For a stronger interaction, the impact of the global parametric drive is determined by the numerically exact time-evolving block decimation scheme. When the trapped bosons in the lattice are in a Mott insulating state, the absorption of energy from the driving field is suppressed due to the strongly reduced local compressibility of the quantum many-body state. In particular, we find that the width of the local Mott region shows a breathing dynamics. Finally, we observe that the global modulation also induces an effective time-independent inhomogeneous hopping strength for the atoms.

Thermal Performance of Composite Flexible Blanket Insulations for Hypersonic Aerospace Vehicles

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A.

1993-01-01

This paper describes the thermal performance of a Composite Flexible Blanket Insulation (C.F.B.I.) considered for potential use as a thermal protection system or thermal insulation for future hypersonic vehicles such as the National Aerospace Plane (N.A.S.P.). Thermophysical properties for these insulations were also measured including the thermal conductivity at various temperatures and pressures and the emissivity of the fabrics used in the flexible insulations. The thermal response of these materials subjected to aeroconvective heating from a plasma arc is also described. Materials tested included two surface variations of the insulations, and similar insulations coated with a Protective Ceramic Coating (P.C.C.). Surface and backface temperatures were measured in the flexible insulations and on Fibrous Refractory Composite Insulation (F.R.C.I.) used as a calibration model. The uncoated flexible insulations exhibited good thermal performance up to 35 W/sq cm. The use of a P.C.C. to protect these insulations at higher heating rates is described. The results from a computerized thermal analysis model describing thermal response of those materials subjected to the plasma arc conditions are included. Thermal and optical properties were determined including thermal conductivity for the rigid and flexible insulations and emissivity for the insulation fabrics. These properties were utilized to calculate the thermal performance of the rigid and flexible insulations at the maximum heating rate.

High-voltage electrical apparatus utilizing an insulating gas of sulfur hexafluoride and helium

DOEpatents

Wootton, Roy E.

1980-01-01

High-voltage electrical apparatus includes an outer housing at low potential, an inner electrode disposed within the outer housing at high potential with respect thereto, and support means for insulatably supporting the inner electrode within the outer housing. Conducting particles contaminate the interior of the outer housing, and an insulating gas electrically insulates the inner electrode from the outer housing even in the presence of the conducting particles. The insulating gas is comprised of sulfur hexafluoride at a partial pressure of from about 2.9 to about 3.4 atmospheres absolute, and helium at a partial pressure from about 1.1 to about 11.4 atmospheres absolute. The sulfur hexafluoride comprises between 20 and 65 volume percent of the insulating gas.

Microfluidic acoustophoretic force based low-concentration oil separation and detection from the environment.

PubMed

Wang, Han; Liu, Zhongzheng; Kim, Sungman; Koo, Chiwan; Cho, Younghak; Jang, Dong-Young; Kim, Yong-Joe; Han, Arum

2014-03-07

Detecting and quantifying extremely low concentrations of oil from the environment have broad applications in oil spill monitoring in ocean and coastal areas as well as in oil leakage monitoring on land. Currently available methods for low-concentration oil detection are bulky or costly with limited sensitivities. Thus they are difficult to be used as portable and field-deployable detectors in the case of oil spills or for monitoring the long-term effects of dispersed oil on marine and coastal ecosystems. Here, we present a low-concentration oil droplet trapping and detection microfluidic system based on the acoustophoresis phenomenon where oil droplets in water having a negative acoustic contrast factor move towards acoustic pressure anti-nodes. By trapping oil droplets from water samples flowing through a microfluidic channel, even very low concentrations of oil droplets can be concentrated to a detectable level for further analyses, which is a significant improvement over currently available oil detection systems. Oil droplets in water were successfully trapped and accumulated in a circular acoustophoretic trapping chamber of the microfluidic device and detected using a custom-built compact fluorescent detector based on the natural fluorescence of the trapped crude oil droplets. After the on-line detection, crude oil droplets released from the trapping chamber were successfully separated into a collection outlet by acoustophoretic force for further off-chip analyses. The developed microfluidic system provides a new way of trapping, detecting, and separating low-concentration crude oil from environmental water samples and holds promise as a low-cost field-deployable oil detector with extremely high sensitivity. The microfluidic system and operation principle are expected to be utilized in a wide range of applications where separating, concentrating, and detecting small particles having a negative acoustic contrast factor are required.

10 CFR 434.201 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... capacity” and “wall heat capacity”) Thermal mass wall insulation position: (1) Exterior insulation position... thermal energy of the vent gases into mechanical energy. Boiler capacity: the rated heat output of the... furnished by the utility. Coefficient of performance (COP)—Cooling: the ratio of the rate of heat removal to...

10 CFR 434.201 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... capacity” and “wall heat capacity”) Thermal mass wall insulation position: (1) Exterior insulation position... thermal energy of the vent gases into mechanical energy. Boiler capacity: the rated heat output of the... furnished by the utility. Coefficient of performance (COP)—Cooling: the ratio of the rate of heat removal to...

Selective aqueous extraction of organics coupled with trapping by membrane separation

DOEpatents

van Eikeren, Paul; Brose, Daniel J.; Ray, Roderick J.

1991-01-01

An improvement to processes for the selective extractation of organic solutes from organic solvents by water-based extractants is disclosed, the improvement comprising coupling various membrane separation processes with the organic extraction process, the membrane separation process being utilized to continuously recycle the water-based extractant and at the same time selectively remove or concentrate organic solute from the water-based extractant.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

The mechanical, optoelectronic and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys

NASA Astrophysics Data System (ADS)

Hamioud, Farida; Mubarak, A. A.

2017-09-01

First-principle calculations are performed using DFT as implemented in Wien2k code to compute the mechanical, electronic, optical and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys. The computed lattice constants, bulk modulus and cohesive energy of these alloys at 0 K and 0 GPa are performed. NiZrSn and NiHfSn are found to be anisotropic and elastically stable. Furthermore, both alloys are confirmed to be thermodynamically stable by the calculated values of the standard enthalpy of formation. The Young’s and shear moduli values show that NiZrSn seems to be stiffer than NiHfSn. The optical properties are performed using the dielectric function. Some beneficial optoelectronic applications are found as exposed in the optical spectra. Moreover, the alloys are classified as good insulators for solar heating. The thermoelectric properties as a function of temperature are computed utilizing BoltzTrap code. The major charge carriers are found to be electrons and the alloys are classified as p-type doping alloys.

Disturbance of Essential Fish Habitat by Commercial Passive Fishing Gear in the Delaware, Maryland, and Virginia region of the Mid-Atlantic Bight

NASA Astrophysics Data System (ADS)

Schweitzer, C.

2016-02-01

Trap fishing is one of the oldest methods utilized to capture fish, and fish traps are currently one of the most dominant fishing gears utilized by commercial fishermen in the DelMarVa (Delaware, Maryland, Virginia) region. Impacts of traps on benthic habitat and emergent epifauna have become an increasing concern since the 1990's, but despite this, there is little published data regarding trap-habitat interactions. Any substrate necessary for fish spawning, breeding, feeding, or growth to maturity is deemed Essential Fish Habitat (EFH) and in order to increase capture success, traps are often deployed near or on EFH. We assessed the degree of trap impacts via video observations from commercial traps at four common fishing sites in the DelMarVa region, 27-36 km off the coast, at depths of 20-30 m. Two traps within a 20 trap rig were customized by attaching GoPro® cameras to give views in front of the trap, toward the trap front, and to the rear of the trap. Analysis of 123 trap deployments shows that traps often drag across the ocean floor and habitats during the retrieval process. Duration of the dragging phase is strongly correlated with trap position on the line (r2=0.6; p<0.001); traps farther down the line drag significantly longer than traps closer to the boat and first retrieved (1st vs last trap: p<0.01). Dragging significantly increases trap-habitat interactions. Traps with minimal drag have <1% chance of contacting EFH but dragging increases the proportion of traps interacting with EFH to 46%. Observed trap-habitat interactions include: damaging and breaking coral, and running over sea stars, anemones, and bryozoans. Essential fish habitats located off the DelMarVa coast are highly fragmented and sparse, and adverse impacts of passive fishing gear probably affect a large portion of the available habitat.

Finite element probabilistic risk assessment of transmission line insulation flashovers caused by lightning strokes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bacvarov, D.C.

1981-01-01

A new method for probabilistic risk assessment of transmission line insulation flashovers caused by lightning strokes is presented. The utilized approach of applying the finite element method for probabilistic risk assessment is demonstrated to be very powerful. The reasons for this are two. First, the finite element method is inherently suitable for analysis of three dimensional spaces where the parameters, such as three variate probability densities of the lightning currents, are non-uniformly distributed. Second, the finite element method permits non-uniform discretization of the three dimensional probability spaces thus yielding high accuracy in critical regions, such as the area of themore » low probability events, while at the same time maintaining coarse discretization in the non-critical areas to keep the number of grid points and the size of the problem to a manageable low level. The finite element probabilistic risk assessment method presented here is based on a new multidimensional search algorithm. It utilizes an efficient iterative technique for finite element interpolation of the transmission line insulation flashover criteria computed with an electro-magnetic transients program. Compared to other available methods the new finite element probabilistic risk assessment method is significantly more accurate and approximately two orders of magnitude computationally more efficient. The method is especially suited for accurate assessment of rare, very low probability events.« less

Dynamic analysis of trapping and escaping in dual beam optical trap

NASA Astrophysics Data System (ADS)

Li, Wenqiang; Hu, Huizhu; Su, Heming; Li, Zhenggang; Shen, Yu

2016-10-01

In this paper, we simulate the dynamic movement of a dielectric sphere in optical trap. This dynamic analysis can be used to calibrate optical forces, increase trapping efficiency and measure viscous coefficient of surrounding medium. Since an accurate dynamic analysis is based on a detailed force calculation, we calculate all forces a sphere receives. We get the forces of dual-beam gradient radiation pressure on a micron-sized dielectric sphere in the ray optics regime and utilize Einstein-Ornstein-Uhlenbeck to deal with its Brownian motion forces. Hydrodynamic viscous force also exists when the sphere moves in liquid. Forces from buoyance and gravity are also taken into consideration. Then we simulate trajectory of a sphere when it is subject to all these forces in a dual optical trap. From our dynamic analysis, the sphere can be trapped at an equilibrium point in static water, although it permanently fluctuates around the equilibrium point due to thermal effects. We go a step further to analyze the effects of misalignment of two optical traps. Trapping and escaping phenomena of the sphere in flowing water are also simulated. In flowing water, the sphere is dragged away from the equilibrium point. This dragging distance increases with the decrease of optical power, which results in escaping of the sphere with optical power below a threshold. In both trapping and escaping process we calculate the forces and position of the sphere. Finally, we analyze a trapping region in dual optical tweezers.

Micropatterning of poly(dimethylsiloxane) using a photoresist lift-off technique for selective electrical insulation of microelectrode arrays

PubMed Central

Park, Jaewon; Kim, Hyun Soo; Han, Arum

2009-01-01

A poly(dimethylsiloxane) (PDMS) patterning method based on a photoresist lift-off technique to make an electrical insulation layer with selective openings is presented. The method enables creating PDMS patterns with small features and various thicknesses without any limitation in the designs and without the need for complicated processes or expensive equipments. Patterned PDMS layers were created by spin-coating liquid phase PDMS on top of a substrate having sacrificial photoresist patterns, followed by a photoresist lift-off process. The thickness of the patterned PDMS layers could be accurately controlled (6.5–24 µm) by adjusting processing parameters such as PDMS spin-coating speeds, PDMS dilution ratios, and sacrificial photoresist thicknesses. PDMS features as small as 15 µm were successfully patterned and the effects of each processing parameter on the final patterns were investigated. Electrical resistance tests between adjacent electrodes with and without the insulation layer showed that the patterned PDMS layer functions properly as an electrical insulation layer. Biocompatibility of the patterned PDMS layer was confirmed by culturing primary neuron cells on top of the layer for up to two weeks. An extensive neuronal network was successfully formed, showing that this PDMS patterning method can be applied to various biosensing microdevices. The utility of this fabrication method was further demonstrated by successfully creating a patterned electrical insulation layer on flexible substrates containing multi-electrode arrays. PMID:19946385

Heat Transfer in High Temperature Multilayer Insulation

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Miller, Steve D.; Cunnington, George R.

2007-01-01

High temperature multilayer insulations have been investigated as an effective component of thermal-protection systems for atmospheric re-entry of reusable launch vehicles. Heat transfer in multilayer insulations consisting of thin, gold-coated, ceramic reflective foils and Saffil(TradeMark) fibrous insulation spacers was studied both numerically and experimentally. A finite volume numerical thermal model using combined conduction (gaseous and solid) and radiation in porous media was developed. A two-flux model with anisotropic scattering was used for radiation heat transfer in the fibrous insulation spacers between the reflective foils. The thermal model was validated by comparison with effective thermal conductivity measurements in an apparatus based on ASTM standard C201. Measurements were performed at environmental pressures in the range from 1x10(exp -4) to 760 torr over the temperature range from 300 to 1300 K. Four multilayer samples with nominal densities of 48 kg/cu m were tested. The first sample was 13.3 mm thick and had four evenly spaced reflective foils. The other three samples were 26.6 mm thick and utilized either one, two, or four reflective foils, located near the hot boundary with nominal foil spacing of 1.7 mm. The validated thermal model was then used to study relevant design parameters, such as reflective foil spacing and location in the stack-up and coating of one or both sides of foils.

Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Hongliang; Du, Mao-Hua

Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs 2NaInBr 6, Cs 2NaBiCl 6, and Tl 2NaBiCl 6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs 2NaInBr 6 as an example tomore » show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.« less

Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

DOE PAGES

Shi, Hongliang; Du, Mao-Hua

2015-05-12

Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs 2NaInBr 6, Cs 2NaBiCl 6, and Tl 2NaBiCl 6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs 2NaInBr 6 as an example tomore » show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.« less

Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

NASA Astrophysics Data System (ADS)

Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

2016-12-01

We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

Heat Transfer in High-Temperature Fibrous Insulation

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran

2002-01-01

The combined radiation/conduction heat transfer in high-porosity, high-temperature fibrous insulations was investigated experimentally and numerically. The effective thermal conductivity of fibrous insulation samples was measured over the temperature range of 300-1300 K and environmental pressure range of 1.33 x 10(exp -5)-101.32 kPa. The fibrous insulation samples tested had nominal densities of 24, 48, and 72 kilograms per cubic meter and thicknesses of 13.3, 26.6 and 39.9 millimeters. Seven samples were tested such that the applied heat flux vector was aligned with local gravity vector to eliminate natural convection as a mode of heat transfer. Two samples were tested with reverse orientation to investigate natural convection effects. It was determined that for the fibrous insulation densities and thicknesses investigated no heat transfer takes place through natural convection. A finite volume numerical model was developed to solve the governing combined radiation and conduction heat transfer equations. Various methods of modeling the gas/solid conduction interaction in fibrous insulations were investigated. The radiation heat transfer was modeled using the modified two-flux approximation assuming anisotropic scattering and gray medium. A genetic-algorithm based parameter estimation technique was utilized with this model to determine the relevant radiative properties of the fibrous insulation over the temperature range of 300-1300 K. The parameter estimation was performed by least square minimization of the difference between measured and predicted values of effective thermal conductivity at a density of 24 kilograms per cubic meters and at nominal pressures of 1.33 x 10(exp -4) and 99.98 kPa. The numerical model was validated by comparison with steady-state effective thermal conductivity measurements at other densities and pressures. The numerical model was also validated by comparison with a transient thermal test simulating reentry aerodynamic heating conditions.

Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

DOEpatents

Golner, Thomas M.; Mehta, Shirish P.

2005-07-26

A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

NASA Astrophysics Data System (ADS)

Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

2012-03-01

This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

METHOD AND APPARATUS FOR TRAPPING IONS IN A MAGNETIC FIELD

DOEpatents

Luce, J.S.

1962-04-17

A method and apparatus are described for trapping ions within an evacuated container and within a magnetic field utilizing dissociation and/or ionization of molecular ions to form atomic ions and energetic neutral particles. The atomic ions are magnetically trapped as a result of a change of charge-to- mass ratio. The molecular ions are injected into the container and into the path of an energetic carbon arc discharge which dissociates and/or ionizes a portion of the molecular ions into atomic ions and energetic neutrals. The resulting atomic ions are trapped by the magnetic field to form a circulating beam of atomic ions, and the energetic neutrals pass out of the system and may be utilized in a particle accelerator. (AEC)

Manufacturing a thin wire electrostatic trap for ultracold polar molecules.

PubMed

Kleinert, J; Haimberger, C; Zabawa, P J; Bigelow, N P

2007-11-01

We present a detailed description on how to build a thin wire electrostatic trap (TWIST) for ultracold polar molecules. It is the first design of an electrostatic trap that can be superimposed directly onto a magneto-optical trap (MOT). We can thus continuously produce ultracold polar molecules via photoassociation from a two species MOT and instantaneously trap them in the TWIST without the need for complex transfer schemes. Despite the spatial overlap of the TWIST and the MOT, the two traps can be operated and optimized completely independently due to the complementary nature of the utilized trapping mechanisms.

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Effects of magnetization on fusion product trapping and secondary neutron spectraa)

NASA Astrophysics Data System (ADS)

Knapp, P. F.; Schmit, P. F.; Hansen, S. B.; Gomez, M. R.; Hahn, K. D.; Sinars, D. B.; Peterson, K. J.; Slutz, S. A.; Sefkow, A. B.; Awe, T. J.; Harding, E.; Jennings, C. A.; Desjarlais, M. P.; Chandler, G. A.; Cooper, G. W.; Cuneo, M. E.; Geissel, M.; Harvey-Thompson, A. J.; Porter, J. L.; Rochau, G. A.; Rovang, D. C.; Ruiz, C. L.; Savage, M. E.; Smith, I. C.; Stygar, W. A.; Herrmann, M. C.

2015-05-01

By magnetizing the fusion fuel in inertial confinement fusion (ICF) systems, the required stagnation pressure and density can be relaxed dramatically. This happens because the magnetic field insulates the hot fuel from the cold pusher and traps the charged fusion burn products. This trapping allows the burn products to deposit their energy in the fuel, facilitating plasma self-heating. Here, we report on a comprehensive theory of this trapping in a cylindrical DD plasma magnetized with a purely axial magnetic field. Using this theory, we are able to show that the secondary fusion reactions can be used to infer the magnetic field-radius product, BR, during fusion burn. This parameter, not ρR, is the primary confinement parameter in magnetized ICF. Using this method, we analyze data from recent Magnetized Liner Inertial Fusion experiments conducted on the Z machine at Sandia National Laboratories. We show that in these experiments BR ≈ 0.34(+0.14/-0.06) MG . cm, a ˜ 14× increase in BR from the initial value, and confirming that the DD-fusion tritons are magnetized at stagnation. This is the first experimental verification of charged burn product magnetization facilitated by compression of an initial seed magnetic flux.

Electrodeless direct current dielectrophoresis using reconfigurable field-shaping oil barriers.

PubMed

Thwar, Prasanna K; Linderman, Jennifer J; Burns, Mark A

2007-12-01

We demonstrate dielectrophoretic (DEP) potential wells using pairs of insulating oil menisci to shape the DC electric field. These oil menisci are arranged in a configuration similar to the quadrupolar electrodes, typically used in DEP, and are shown to produce similar field gradients. While the one-pair well produces a focusing effect on particles in flow, the two-pair well results in creating spatial traps against crossflows. Uncharged polystyrene particles were used to map the DEP force fields and the experimental observations were compared against the field profiles obtained by numerically solving Maxwell's equations. We demonstrate trapping of a single particle due to negative DEP against a pressure-driven crossflow. This can be easily extended to trap and hold cells and other objects against flow for a longer time. We also show the results of particle trapping experiments performed to observe the effect of adjusting the oil menisci and the gap between two pairs of menisci in a four-menisci configuration on the nature of the DEP well formed at the center. A design parameter, Theta, capturing the dimensions of the DEP energy well, is defined and simulations exploring the effects of different geometric features on Theta are presented.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

2016-05-01

Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

Determining the Critical Dose Threshold of Electron-Induced Electron Yield for Minimally Charged Highly Insulating Materials

NASA Astrophysics Data System (ADS)

Hoffmann, Ryan; Dennison, J. R.; Abbott, Jonathan

2006-03-01

When incident energetic electrons interact with a material, they excite electrons within the material to escape energies. The electron emission is quantified as the ratio of emitted electrons to incident particle flux, termed electron yield. Measuring the electron yield of insulators is difficult due to dynamic surface charge accumulation which directly affects landing energies and the potential barrier that emitted electrons must overcome. Our recent measurements of highly insulating materials have demonstrated significant changes in total yield curves and yield decay curves for very small electron doses equivalent to a trapped charge density of <10^10 electrons /cm^3. The Chung-Everhart theory provides a basic model for the behavior of the electron emission spectra which we relate to yield decay curves as charge is allowed to accumulate. Yield measurements as a function of dose for polyimide (Kapton^TM) and microcrystalline SiO2 will be presented. We use our data and model to address the question of whether there is a minimal dose threshold at which the accumulated charge no longer affects the yield.

Dynamic trajectory analysis of superparamagnetic beads driven by on-chip micromagnets

PubMed Central

Abedini-Nassab, Roozbeh; Lim, Byeonghwa; Yang, Ye; Howdyshell, Marci; Sooryakumar, Ratnasingham; Yellen, Benjamin B.

2015-01-01

We investigate the non-linear dynamics of superparamagnetic beads moving around the periphery of patterned magnetic disks in the presence of an in-plane rotating magnetic field. Three different dynamical regimes are observed in experiments, including (1) phase-locked motion at low driving frequencies, (2) phase-slipping motion above the first critical frequency fc1, and (3) phase-insulated motion above the second critical frequency fc2. Experiments with Janus particles were used to confirm that the beads move by sliding rather than rolling. The rest of the experiments were conducted on spherical, isotropic magnetic beads, in which automated particle position tracking algorithms were used to analyze the bead dynamics. Experimental results in the phase-locked and phase-slipping regimes correlate well with numerical simulations. Additional assumptions are required to predict the onset of the phase-insulated regime, in which the beads are trapped in closed orbits; however, the origin of the phase-insulated state appears to result from local magnetization defects. These results indicate that these three dynamical states are universal properties of bead motion in non-uniform oscillators. PMID:26648596

Novel Ultrahigh Vacuum System for Chip-Scale Trapped Ion Quantum Computing

NASA Astrophysics Data System (ADS)

Chen, Shaw-Pin; Trapped Team

2011-05-01

This presentation reports the experimental results of an ultrahigh vacuum (UHV) system as a scheme to implement scalable trapped-ion quantum computers that use micro-fabricated ion traps as fundamental building blocks. The novelty of this system resides in our design, material selection, mechanical liability, low complexity of assembly, and reduced signal interference between DC and RF electrodes. Our system utilizes RF isolation and onsite-filtering topologies to attenuate AC signals generated from the resonator. We use a UHV compatible printed circuit board (PCB) material to perform DC routing, while the RF high and RF ground received separated routing via wire-wrapping. The standard PCB fabrication process enabled us to implement ceramic-based filter components adjacent to the chip trap. The DC electrodes are connected to air-side electrical feed through using four 25D adaptors made with polyether ether ketone (PEEK). The assembly process of this system is straight forward and in-chamber structure is self-supporting. We report on initial testing of this concept with a linear chip trap fabricated by the Sandia National Labs.

Carrier Conduction and Light Emission by Modification of Poly(alkylfluorene) Interface under Vacuum Ultraviolet Light Irradiation

NASA Astrophysics Data System (ADS)

Ohmori, Yutaka; Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke

2013-03-01

Organic field effect transistors (OFETs) have been extensively studied for flexible electronics. The characteristics of poly(9,9-dioctylfluorenyl-2,7-dyl) (F8) modified by thermal or light are strongly dependent on the carrier transport and optical characteristics. We investigate all solution-processed OFETs with Ag nano-ink as gate electrodes patterned by Vacuum Ultraviolet (VUV) (172 nm). Bi-layer gate insulators of amorphous fluoro-polymer CYTOP (Asahi Glass Corp.) and poly(methylmethacrylate) (PMMA) were used. Top-gate-type OFETs with ITO source/drain electrode utilizing F8 or poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as an active layer were fabricated, and investigated the carrier conduction and emission characteristic. Without VUV irradiation, both OFETs showed the ambipolar and light-emitting characteristics. On the other hand, F8 devices with VUV exhibited only p-type conduction. The quenching centers were generated in F8 layer by VUV irradiation, which are related to the electron trap sites at the interface. OFETs with F8BT showed both p- and n-type conduction even after VUV. F8BT suffers less damage by VUV and maintain light emission. Light emitting transistors were realized utilizing F8BT patterned by VUV irradiation. This research was partially supported financially by MEXT. The authors thank Harima Chemicals Inc. for providing Ag nano-ink.

Fuel cell generator containing a gas sealing means

DOEpatents

Makiel, J.M.

1987-02-03

A high temperature solid electrolyte electrochemical generator is made, operating with flowing fuel gas and oxidant gas, the generator having a thermal insulation layer, and a sealing means contacting or contained within the insulation, where the sealing means is effective to control the contact of the various gases utilized in the generator. 5 figs.

Quantitative phase imaging for enhanced assessment of optomechanical cancer cell properties

NASA Astrophysics Data System (ADS)

Kastl, Lena; Kemper, Björn; Schnekenburger, Jürgen

2018-02-01

Optical cell stretching provides label-free investigations of cells by measuring their biomechanical properties based on deformability determination in a fiber optical two-beam trap. However, the stretching forces in this two-beam laser trap depend on the optical properties of the investigated specimen. Therefore, we characterized in parallel four cancer cell lines with varying degree of differentiation utilizing quantitative phase imaging (QPI) and optical cell stretching. The QPI data allowed enhanced assessment of the mechanical cell properties measured with the optical cell stretcher and demonstrates the high potential of cell phenotyping when both techniques are combined.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinert, J.; Haimberger, C.; Zabawa, P. J.

We present a detailed description on how to build a thin wire electrostatic trap (TWIST) for ultracold polar molecules. It is the first design of an electrostatic trap that can be superimposed directly onto a magneto-optical trap (MOT). We can thus continuously produce ultracold polar molecules via photoassociation from a two species MOT and instantaneously trap them in the TWIST without the need for complex transfer schemes. Despite the spatial overlap of the TWIST and the MOT, the two traps can be operated and optimized completely independently due to the complementary nature of the utilized trapping mechanisms.

Adverse Effects of Excess Residual PbI2 on Photovoltaic Performance, Charge Separation, and Trap-State Properties in Mesoporous Structured Perovskite Solar Cells.

PubMed

Wang, Hao-Yi; Hao, Ming-Yang; Han, Jun; Yu, Man; Qin, Yujun; Zhang, Pu; Guo, Zhi-Xin; Ai, Xi-Cheng; Zhang, Jian-Ping

2017-03-17

Organic-inorganic halide perovskite solar cells have rapidly come to prominence in the photovoltaic field. In this context, CH 3 NH 3 PbI 3 , as the most widely adopted active layer, has been attracting great attention. Generally, in a CH 3 NH 3 PbI 3 layer, unreacted PbI 2 inevitably coexists with the perovskite crystals, especially following a two-step fabrication process. There appears to be a consensus that an appropriate amount of unreacted PbI 2 is beneficial to the overall photovoltaic performance of a device, the only disadvantageous aspect of excess residual PbI 2 being viewed as its insulating nature. However, the further development of such perovskite-based devices requires a deeper understanding of the role of residual PbI 2 . In this work, PbI 2 -enriched and PbI 2 -controlled perovskite films, as two extreme cases, have been prepared by modulating the crystallinity of a pre-deposited PbI 2 film. The effects of excess residual PbI 2 have been elucidated on the basis of spectroscopic and optoelectronic studies. The initial charge separation, the trap-state density, and the trap-state distribution have all been found to be adversely affected in PbI 2 -enriched devices, to the detriment of photovoltaic performance. This leads to a biphasic recombination process and accelerates the charge carrier recombination dynamics. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Insulation of Enhancer-Promoter Communication by a Gypsy Transposon Insert in the Drosophila cut Gene: Cooperation between Suppressor of Hairy-wing and Modifier of mdg4 Proteins

PubMed Central

Gause, Maria; Morcillo, Patrick; Dorsett, Dale

2001-01-01

The Drosophila mod(mdg4) gene products counteract heterochromatin-mediated silencing of the white gene and help activate genes of the bithorax complex. They also regulate the insulator activity of the gypsy transposon when gypsy inserts between an enhancer and promoter. The Su(Hw) protein is required for gypsy-mediated insulation, and the Mod(mdg4)-67.2 protein binds to Su(Hw). The aim of this study was to determine whether Mod(mdg4)-67.2 is a coinsulator that helps Su(Hw) block enhancers or a facilitator of activation that is inhibited by Su(Hw). Here we provide evidence that Mod(mdg4)-67.2 acts as a coinsulator by showing that some loss-of-function mod(mdg4) mutations decrease enhancer blocking by a gypsy insert in the cut gene. We find that the C terminus of Mod(mdg4)-67.2 binds in vitro to a region of Su(Hw) that is required for insulation, while the N terminus mediates self-association. The N terminus of Mod(mdg4)-67.2 also interacts with the Chip protein, which facilitates activation of cut. Mod(mdg4)-67.2 truncated in the C terminus interferes in a dominant-negative fashion with insulation in cut but does not significantly affect heterochromatin-mediated silencing of white. We infer that multiple contacts between Su(Hw) and a Mod(mdg4)-67.2 multimer are required for insulation. We theorize that Mod(mdg4)-67.2 usually aids gene activation but can also act as a coinsulator by helping Su(Hw) trap facilitators of activation, such as the Chip protein. PMID:11416154

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

Optical trapping of core-shell magnetic microparticles by cylindrical vector beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Min-Cheng; Gong, Lei; Li, Di

2014-11-03

Optical trapping of core-shell magnetic microparticles is experimentally demonstrated by using cylindrical vector beams. Second, we investigate the optical trapping efficiencies. The results show that radially and azimuthally polarized beams exhibit higher axial trapping efficiencies than the Gaussian beam. Finally, a trapped particle is manipulated to kill a cancer cell. The results make possible utilizing magnetic particles for optical manipulation, which is an important advantage for magnetic particles as labeling agent in targeted medicine and biological analysis.

Infrared Thermography As Quality Control For Foamed In-Place Insulation

NASA Astrophysics Data System (ADS)

Schwartz, Joel A.

1989-03-01

Since November of 1985, FOAM-TECH, INC. has been utilizing an I.S.I. Model 91 Videotherm Camera to quality control the installation of foamed in-place polyurethane and polyisocyanurate insulation. Monitoring the injection of foam into the walls and roofs of new construction and during the the retrofitting of older buildings has become an integral and routine step in daily operations. The Videotherm is also used to monitor the injection of foam into hot water tanks, trailer bodies for refrigeration trucks, and pontoons and buoys for flotation. The camera is also used for the detection of heat loss and air infiltration for conventionally insulated buildings. Appendix A are thermograms of foamed in-place insulation.

Comparative Field Evaluation of Different Traps for Collecting Adult Phlebotomine Sand Flies (Diptera: Psychodidae) in an Endemic Area of Cutaneous Leishmaniasis in Quintana Roo, Mexico.

PubMed

Rodríguez-Rojas, Jorge J; Arque-Chunga, Wilfredo; Fernández-Salas, Ildefonso; Rebollar-Téllez, Eduardo A

2016-06-01

Phlebotominae are the vectors of Leishmania parasites. It is important to have available surveillance and collection methods for the sand fly vectors. The objectives of the present study were to evaluate and compare traps for the collection of sand fly species and to analyze trap catches along months and transects. Field evaluations over a year were conducted in an endemic area of leishmaniasis in the state of Quintana Roo, Mexico. A randomized-block design was implemented in study area with tropical rainforest vegetation. The study design utilized 4 transects with 11 trap types: 1) Centers for Disease Control and Prevention (CDC) light trap with incandescent bulb (CDC-I), 2) CDC light trap with blue light-emitting diodes (LEDs) (CDC-B), 3) CDC light trap with white LEDs (CDC-W), 4) CDC light trap with red LEDs (CDC-R), 5) CDC light trap with green LEDs (CDC-G), 6) Disney trap, 7) Disney trap with white LEDs, 8) sticky panels, 9) sticky panels with white LEDs, 10) delta-like trap, and 11) delta-like trap with white LEDs. A total of 1,014 specimens of 13 species and 2 genera (Lutzomyia and Brumptomyia) were collected. There were significant differences in the mean number of sand flies caught with the 11 traps; CDC-I was (P  =  0.0000) more effective than the other traps. Other traps exhibited the following results: CDC-W (17.46%), CDC-B (15.68%), CDC-G (14.89%), and CDC-R (14.30%). The relative abundance of different species varied according to trap types used, and the CDC-I trap attracted more specimens of the known vectors of Leishmania spp., such as like Lutzomyia cruciata, Lu. shannoni, and Lu. ovallesi. Disney trap captured more specimens of Lu. olmeca olmeca. Based on abundance and number of species, CDC light traps and Disney traps appeared to be good candidates for use in vector surveillance programs in this endemic area of Mexico.

Analytical and numerical analysis of charge carriers extracted by linearly increasing voltage in a metal-insulator-semiconductor structure relevant to bulk heterojunction organic solar cells

NASA Astrophysics Data System (ADS)

Yumnam, Nivedita; Hirwa, Hippolyte; Wagner, Veit

2017-12-01

Analysis of charge extraction by linearly increasing voltage is conducted on metal-insulator-semiconductor capacitors in a structure relevant to organic solar cells. For this analysis, an analytical model is developed and is used to determine the conductivity of the active layer. Numerical simulations of the transient current were performed as a way to confirm the applicability of our analytical model and other analytical models existing in the literature. Our analysis is applied to poly(3-hexylthiophene)(P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) which allows to determine the electron and hole mobility independently. A combination of experimental data analysis and numerical simulations reveals the effect of trap states on the transient current and where this contribution is crucial for data analysis.

Attic Retrofits Using Nail-Base Insulated Panels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mallay, David; Kochkin, Vladimir

This project developed and demonstrated a roof/attic energy retrofit solution using nail-base insulated panels for existing homes where traditional attic insulation approaches are not effective or feasible. Nail-base insulated panels (retrofit panels) consist of rigid foam insulation laminated to one face of a wood structural panel. The prefabricated panels are installed above the existing roof deck during a reroofing effort.

A Survey of Thermal Decomposition of Solid Insulations and Its Relevance to Breakdown Mechanisms in Partial Vacuum

DTIC Science & Technology

1995-07-01

and a ductile, rubber compound ( EPDM ) utilized in applications requiring flexible insulation. These tests were typically performed in a vacuum or... EPDM ) rt7l materials, as indicated by the "x". In addition to the more common groups, data is included for a relatively new dielectric film (PBO

Topological insulator infrared pseudo-bolometer with polarization sensitivity

DOEpatents

Sharma, Peter Anand

2017-10-25

Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

Method of testing gas insulated systems for the presence of conducting particles utilizing a gas mixture of nitrogen and sulfur hexafluoride

DOEpatents

Wootton, Roy E.

1979-01-01

A method of testing a gas insulated system for the presence of conducting particles. The method includes inserting a gaseous mixture comprising about 98 volume percent nitrogen and about 2 volume percent sulfur hexafluoride into the gas insulated system at a pressure greater than 60 lb./sq. in. gauge, and then applying a test voltage to the system. If particles are present within the system, the gaseous mixture will break down, providing an indicator of the presence of the particles.

Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam: Application to single-crystals oxide trapping properties

NASA Astrophysics Data System (ADS)

Vallayer, B.; Blaise, G.; Treheux, D.

1999-07-01

When an insulating material is subjected to electron irradiation, it produces a secondary emission the yield of which varies from a few percent to very high values (up to 24 per incoming electron) depending on the material and the experimental conditions. If the secondary electron emission yield is less than one, a net negative charge remains trapped in the sample. In this case, the study of the electric charges trapping properties of the material becomes possible. This article describes how it is possible to use a secondary electron microscope (SEM) as a device to perform such a study. In Sec. II, the effect of a net negative trapped charge resulting (from the injection of typically 50 pC) on the imaging process of the SEM has been described. It has been shown that when the trapped charge is high enough, it acts as a mirror reflecting the incoming electron beam which is deflected somewhere in the vacuum chamber of the microscope. A global qualitative description of the image displayed on the screen is first presented. Then electron trajectories are quantitatively studied by using the Rutherford scattering cross section in the case of a point charge. When the charge is extended, a numeric simulation has been done in order to predict the validity range of the previous model. Once the trajectories have been calculated, the connection between the remarkable elements of the image and the quantity of trapped charges has been established. Moreover, this technique allows one to study the lateral dimension of the trapped charge zone and to measure the surface potential. In Sec. III, the discussion is first focused on some precautions to be taken concerning the sample preparation before the experiment is performed. It has been shown that surface defects due either to contamination layers or machining change the trapping properties of single-crystals ceramics such as MgO and Al2O3. A cleaning procedure is proposed that consists of annealing the sample at 1500 °C for 4 h in order to heal the crystalline defects and a heating at 400 °C in the vacuum chamber of the SEM to remove the contamination layers. Finally, the effect of the temperature on the trapping properties of pure and chromium doped sapphire has been studied in relation with the chromium concentration. It is shown that temperature behavior of trapping is in relation with the chromium concentration. In the pure sapphire trapping is activated below -16 °C, in 500 ppm rubis it is below -9.5 °C due to isolated chromium atoms, and in the 8000 ppm rubis the critical trapping temperature rises to 3.7 °C due to Cr3+ pairs. The interpretation of the role played by chromium on trapping is based on the experimental study of the fluorescence of chromium atoms and pairs as a function of concentration.

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Foam/Aerogel Composite Materials for Thermal and Acoustic Insulation and Cryogen Storage

NASA Technical Reports Server (NTRS)

Williams, Martha K. (Inventor); Smith, Trent M. (Inventor); Fesmire, James E. (Inventor); Sass, Jared P. (Inventor); Weiser, Erik S. (Inventor)

2011-01-01

The invention involves composite materials containing a polymer foam and an aerogel. The composite materials have improved thermal insulation ability, good acoustic insulation, and excellent physical mechanical properties. The composite materials can be used, for instance, for heat and acoustic insulation on aircraft, spacecraft, and maritime ships in place of currently used foam panels and other foam products. The materials of the invention can also be used in building construction with their combination of light weight, strength, elasticity, ability to be formed into desired shapes, and superior thermal and acoustic insulation power. The materials have also been found to have utility for storage of cryogens. A cryogenic liquid or gas, such as N.sub.2 or H.sub.2, adsorbs to the surfaces in aerogel particles. Thus, another embodiment of the invention provides a storage vessel for a cryogen.

Foam/aerogel composite materials for thermal and acoustic insulation and cryogen storage

NASA Technical Reports Server (NTRS)

Smith, Trent M. (Inventor); Fesmire, James E. (Inventor); Williams, Martha K. (Inventor); Sass, Jared P. (Inventor); Weiser, Erik S. (Inventor)

2010-01-01

The invention involves composite materials containing a polymer foam and an aerogel. The composite materials have improved thermal insulation ability, good acoustic insulation, and excellent physical mechanical properties. The composite materials can be used, for instance, for heat and acoustic insulation on aircraft, spacecraft, and maritime ships in place of currently used foam panels and other foam products. The materials of the invention can also be used in building construction with their combination of light weight, strength, elasticity, ability to be formed into desired shapes, and superior thermal and acoustic insulation power. The materials have also been found to have utility for storage of cryogens. A cryogenic liquid or gas, such as N.sub.2 or H.sub.2, adsorbs to the surfaces in aerogel particles. Thus, another embodiment of the invention provides a storage vessel for a cryogen.

Chemically Designed Metallic/Insulating Hybrid Nanostructures with Silver Nanocrystals for Highly Sensitive Wearable Pressure Sensors.

PubMed

Kim, Haneun; Lee, Seung-Wook; Joh, Hyungmok; Seong, Mingi; Lee, Woo Seok; Kang, Min Su; Pyo, Jun Beom; Oh, Soong Ju

2018-01-10

With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa -1 , reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 10 4 kPa -1 . Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.

A Study of Electrical and Optical Stability of GSZO THin Film Transisitors

DTIC Science & Technology

2014-01-01

introduces an overview of the research carried out on IGZO , ZnO, and GSZO thin film transistors that is relevant to the work discussed in this...dangling bonds or electron trapping near the gate insulator interface in IGZO thin film transistors . Mathews et al. [13] indicated that subjecting TFTs to...Ping David Shieh, Hideo Hosono, and Jerzy Kanicki, Photofield-Effect in Amporphous In-Ga-Zn-O (a- IGZO ) Thin - Film Transistors . Journal of Information

Novel Miscanthus Germplasm-Based Value Chains: A Life Cycle Assessment

PubMed Central

Wagner, Moritz; Kiesel, Andreas; Hastings, Astley; Iqbal, Yasir; Lewandowski, Iris

2017-01-01

In recent years, considerable progress has been made in miscanthus research: improvement of management practices, breeding of new genotypes, especially for marginal conditions, and development of novel utilization options. The purpose of the current study was a holistic analysis of the environmental performance of such novel miscanthus-based value chains. In addition, the relevance of the analyzed environmental impact categories was assessed. A Life Cycle Assessment was conducted to analyse the environmental performance of the miscanthus-based value chains in 18 impact categories. In order to include the substitution of a reference product, a system expansion approach was used. In addition, a normalization step was applied. This allowed the relevance of these impact categories to be evaluated for each utilization pathway. The miscanthus was cultivated on six sites in Europe (Aberystwyth, Adana, Moscow, Potash, Stuttgart and Wageningen) and the biomass was utilized in the following six pathways: (1) small-scale combustion (heat)—chips; (2) small-scale combustion (heat)—pellets; (3) large-scale combustion (CHP)—biomass baled for transport and storage; (4) large-scale combustion (CHP)—pellets; (5) medium-scale biogas plant—ensiled miscanthus biomass; and (6) large-scale production of insulation material. Thus, in total, the environmental performance of 36 site × pathway combinations was assessed. The comparatively high normalized results of human toxicity, marine, and freshwater ecotoxicity, and freshwater eutrophication indicate the relevance of these impact categories in the assessment of miscanthus-based value chains. Differences between the six sites can almost entirely be attributed to variations in biomass yield. However, the environmental performance of the utilization pathways analyzed varied widely. The largest differences were shown for freshwater and marine ecotoxicity, and freshwater eutrophication. The production of insulation material had the lowest impact on the environment, with net benefits in all impact categories expect three (marine eutrophication, human toxicity, agricultural land occupation). This performance can be explained by the multiple use of the biomass, first as material and subsequently as an energy carrier, and by the substitution of an emission-intensive reference product. The results of this study emphasize the importance of assessing all environmental impacts when selecting appropriate utilization pathways. PMID:28642784

Polymer/glass nanocomposite fiber as an insulating material

NASA Astrophysics Data System (ADS)

Taygun, M. Erol; Akkaya, I.; Gönen, S. Ö.; Küçükbayrak, S.

2017-02-01

Production of the insulation materials with using nanofibers is the unique idea. With this idea, insulating facilities are enhanced with compressing air between the layers of nanofibers. Basically, glass wool is used as an insulation material. On the other hand, nanofiber glasses can be preferred for insulation purposes to be able to obtain insulation materials better then glass wool. From this point of view in this study, glass nanofibers were formed with sol-gel method by utilizing electrospinning technique. In the experimental part, first of all, sol-gel and polyvinylpyrolidone (PVP)/ethanol solutions were prepared. Then the relation of rheological properties with electrospinnability of PVP/sol-gel solutions was investigated by using a rheometer. Results showed that viscosity increased with the concentration of PVP. Meanwhile, the morphology of electrospun PVP/glass nanofibers was investigated by scanning electron microscope. It was also observed that the homogeneous nanofiber structure was obtained when the viscosity of the solution was 0.006 Pa.s. According to SEM results, it was concluded that nanocomposite fiber having a nanostructured morphology may be a good candidate for thermal insulation applications in the industry.

Microstructure characterization of multi-phase composites and utilization of phase change materials and recycled rubbers in cementitious materials

NASA Astrophysics Data System (ADS)

Meshgin, Pania

2011-12-01

This research focuses on two important subjects: (1) Characterization of heterogeneous microstructure of multi-phase composites and the effect of microstructural features on effective properties of the material. (2) Utilizations of phase change materials and recycled rubber particles from waste tires to improve thermal properties of insulation materials used in building envelopes. Spatial pattern of multi-phase and multidimensional internal structures of most composite materials are highly random. Quantitative description of the spatial distribution should be developed based on proper statistical models, which characterize the morphological features. For a composite material with multi-phases, the volume fraction of the phases as well as the morphological parameters of the phases have very strong influences on the effective property of the composite. These morphological parameters depend on the microstructure of each phase. This study intends to include the effect of higher order morphological details of the microstructure in the composite models. The higher order statistics, called two-point correlation functions characterize various behaviors of the composite at any two points in a stochastic field. Specifically, correlation functions of mosaic patterns are used in the study for characterizing transport properties of composite materials. One of the most effective methods to improve energy efficiency of buildings is to enhance thermal properties of insulation materials. The idea of using phase change materials and recycled rubber particles such as scrap tires in insulation materials for building envelopes has been studied.

Research on breakdown characteristics of converter transformer oil-paper insulation under compound electric field in alpine region

NASA Astrophysics Data System (ADS)

Xu, C.; Gao, Z. W.; Lan, S.; Guo, H. X.; Gong, M. C.

2018-01-01

In the paper, existing research and operating experience was summarized. On the basis, the particularity of oil-paper insulation operation condition for converter transformer was combined for studying the influence of temperature on oil-paper insulation field intensity distribution of converter transformers under different AC contents within wide temperature scope (-40°C∼105°C). The law of temperature gradients on space charge accumulation was analyzed. The breakdown or flashover characteristics of typical oil-paper compound insulation structure under the action of DC, AC and AC-DC superposition voltage at different temperatures were explored. The design principles of converter transformer oil-paper insulation structures in alpine region was proposed. The principle was adjusted and optimized properly according to the operation temperature scope and withstood AC-DC proportion. The reliability of transformer operation was improved on the one hand, and the insulating medium can be rationally utilized for reducing the manufacturing cost of the transformer on the other hand.

Phase diagram of the disordered Bose-Hubbard model

NASA Astrophysics Data System (ADS)

Gurarie, V.; Pollet, L.; Prokof'Ev, N. V.; Svistunov, B. V.; Troyer, M.

2009-12-01

We establish the phase diagram of the disordered three-dimensional Bose-Hubbard model at unity filling which has been controversial for many years. The theorem of inclusions, proven by Pollet [Phys. Rev. Lett. 103, 140402 (2009)] states that the Bose-glass phase always intervenes between the Mott insulating and superfluid phases. Here, we note that assumptions on which the theorem is based exclude phase transitions between gapped (Mott insulator) and gapless phases (Bose glass). The apparent paradox is resolved through a unique mechanism: such transitions have to be of the Griffiths type when the vanishing of the gap at the critical point is due to a zero concentration of rare regions where extreme fluctuations of disorder mimic a regular gapless system. An exactly solvable random transverse field Ising model in one dimension is used to illustrate the point. A highly nontrivial overall shape of the phase diagram is revealed with the worm algorithm. The phase diagram features a long superfluid finger at strong disorder and on-site interaction. Moreover, bosonic superfluidity is extremely robust against disorder in a broad range of interaction parameters; it persists in random potentials nearly 50 (!) times larger than the particle half-bandwidth. Finally, we comment on the feasibility of obtaining this phase diagram in cold-atom experiments, which work with trapped systems at finite temperature.

Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures

NASA Astrophysics Data System (ADS)

Meyer, Rene; Miao, Maosheng; Wu, Jian; Chevallier, Christophe

2013-03-01

We report resistive and capacitive memory effects observed in oxide insulator/ oxide conductor hetero-structures. Electronic transport properties of Pt/ZrO2/PCMO/Pt structures with ZrO2 thicknesses ranging from 20A to 40A are studied before and after applying short voltage pulses of positive and negative polarity for set and reset operation. As processed devices display a non-linear IV characteristic which we attribute to trap assisted tunneling through the ZrO2 tunnel oxide. Current scaling with electrode area and tunnel oxide thickness confirms uniform conduction. The set/reset operation cause an up/down shift of the IV characteristic indicating that the conduction mechanism of both states is still dominated by tunneling. A change in the resistance is associated with a capacitance change of the device. An exponential relation between program voltages and set times is found. A model based on electric field mediated non-linear transport of oxygen ions across the ZrO2/PCMO interface is proposed. The change in the tunnel current is explained by ionic charge transfer between tunnel oxide and conductive metal oxide changing both tunnel barrier height and PCMO conductivity. DFT techniques are employed to explain the conductivity change in the PCMO interfacial layer observed through capacitance measurements.

Enhanced performance of ferroelectric-based all organic transistors and capacitors through choice of solvent

NASA Astrophysics Data System (ADS)

Knotts, Grant; Bhaumik, Anagh; Ghosh, Kartik; Guha, Suchismita

2014-03-01

We examine the role of solvents in the performance of pentacene devices using the ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFe) as a gate insulating layer. High dipole moment solvents such as dimethyl sulfoxide used to dissolve the copolymer for spin casting increase the charge carrier mobility in field-effect transistors by nearly an order of magnitude as compared to lower dipole moment solvents. The polarization in Al/PVDF-TrFe/Au metal-ferroelectric-metal devices is also investigated. An increase in remnant polarization of ~ 20% is observed in the sample using dimethyl sulfoxide as the ferroelectric solvent. Interestingly, at low applied electric fields of ~ 100 MV/m a remnant polarization is seen in the high dipole moment device that is nearly 3.5 times larger than the value observed in the lower dipole moment samples, suggesting that the degree of dipolar order is higher at low operating voltages for the high dipole moment device. Detailed analysis of the capacitance characteristics of metal-insulator-semiconductor structure is performed. The density of interface trap states is nearly an order of magnitude lower for the high dipole moment device. This work was supported by National Science Foundation under Grant No. ECCS-1305642.

Insulated Foamy Viral Vectors

PubMed Central

Browning, Diana L.; Collins, Casey P.; Hocum, Jonah D.; Leap, David J.; Rae, Dustin T.; Trobridge, Grant D.

2016-01-01

Retroviral vector-mediated gene therapy is promising, but genotoxicity has limited its use in the clinic. Genotoxicity is highly dependent on the retroviral vector used, and foamy viral (FV) vectors appear relatively safe. However, internal promoters may still potentially activate nearby genes. We developed insulated FV vectors, using four previously described insulators: a version of the well-studied chicken hypersensitivity site 4 insulator (650cHS4), two synthetic CCCTC-binding factor (CTCF)-based insulators, and an insulator based on the CCAAT box-binding transcription factor/nuclear factor I (7xCTF/NF1). We directly compared these insulators for enhancer-blocking activity, effect on FV vector titer, and fidelity of transfer to both proviral long terminal repeats. The synthetic CTCF-based insulators had the strongest insulating activity, but reduced titers significantly. The 7xCTF/NF1 insulator did not reduce titers but had weak insulating activity. The 650cHS4-insulated FV vector was identified as the overall most promising vector. Uninsulated and 650cHS4-insulated FV vectors were both significantly less genotoxic than gammaretroviral vectors. Integration sites were evaluated in cord blood CD34+ cells and the 650cHS4-insulated FV vector had fewer hotspots compared with an uninsulated FV vector. These data suggest that insulated FV vectors are promising for hematopoietic stem cell gene therapy. PMID:26715244

Ion-trajectory analysis for micromotion minimization and the measurement of small forces

NASA Astrophysics Data System (ADS)

Gloger, Timm F.; Kaufmann, Peter; Kaufmann, Delia; Baig, M. Tanveer; Collath, Thomas; Johanning, Michael; Wunderlich, Christof

2015-10-01

For experiments with ions confined in a Paul trap, minimization of micromotion is often essential. In order to diagnose and compensate micromotion we have implemented a method that allows for finding the position of the radio-frequency (rf) null reliably and efficiently, in principle, without any variation of direct current (dc) voltages. We apply a trap modulation technique and focus-scanning imaging to extract three-dimensional ion positions for various rf drive powers and analyze the power dependence of the equilibrium position of the trapped ion. In contrast to commonly used methods, the search algorithm directly makes use of a physical effect as opposed to efficient numerical minimization in a high-dimensional parameter space. Using this method we achieve a compensation of the residual electric field that causes excess micromotion in the radial plane of a linear Paul trap down to 0.09 Vm-1 . Additionally, the precise position determination of a single harmonically trapped ion employed here can also be utilized for the detection of small forces. This is demonstrated by determining light pressure forces with a precision of 135 yN. As the method is based on imaging only, it can be applied to several ions simultaneously and is independent of laser direction and thus well suited to be used with, for example, surface-electrode traps.

Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Yue, Lan; Meng, Fanxin; Chen, Jiarong

2018-01-01

The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor in IZO films. Meanwhile, it was found that the on/off current ratio (I on/off) of TFT was improved by embedding a high-resistivity AIZO layer between the low-resistivity AIZO layer and gate insulator. The improvement in I on/off was attributed to the decrease in off-state current of double-active-layer TFT due to an increase in the active-layer resistance and the contact resistance between active layer and source/drain electrode. Moreover, on-state current and threshold voltage (V th) can be mainly controlled through thickness and Al content of the low-resistivity AIZO layer. In addition, the saturation mobility (μ sat) of TFTs was improved with reducing the size of channel width or/and length, which was attributed to the decrease in trap states in the semiconductor and at the semiconductor/gate-insulator interface with the smaller channel width or/and shorter channel length. Thus, we can demonstrate excellent TFTs via the design of active-layer composition and structure by utilizing a low cost solution-processed method. The resulting TFT, operating in enhancement mode, has a high μ sat of 14.16 cm2 V-1 s-1, a small SS of 0.40 V/decade, a close-to-zero V th of 0.50 V, and I on/off of more than 105.

Accurate Determination of the Dynamical Polarizability of Dysprosium

NASA Astrophysics Data System (ADS)

Ravensbergen, C.; Corre, V.; Soave, E.; Kreyer, M.; Tzanova, S.; Kirilov, E.; Grimm, R.

2018-06-01

We report a measurement of the dynamical polarizability of dysprosium atoms in their electronic ground state at the optical wavelength of 1064 nm, which is of particular interest for laser trapping experiments. Our method is based on collective oscillations in an optical dipole trap, and reaches unprecedented accuracy and precision by comparison with an alkali atom (potassium) as a reference species. We obtain values of 184.4(2.4) and 1.7(6) a.u. for the scalar and tensor polarizability, respectively. Our experiments have reached a level that permits meaningful tests of current theoretical descriptions and provides valuable information for future experiments utilizing the intriguing properties of heavy lanthanide atoms.

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

This study presents the investigation on crystallinity property of PbTiO3 thin films towards metal-insulator-metal capacitor device fabrication. The preparation of the thin films utilizes sol-gel spin coating method with low annealing temperature effect. Hence, structural and electrical characterization is brought to justify the thin films consistency.

GIS insulation co-ordination: On-site tests and dielectric diagnostic techniques, a utility point of view

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabot, A.; Petit, A.; Taillebois, J.P.

1996-07-01

This paper summarizes the Electricite de France experience with insulation co-ordination of GIS. After a review of the insulation co-ordination practice mainly dealing with fast front overvoltage and the one minute AC test, some results of the on-site test procedure applied since 30 years are presented and related to the insulation co-ordination practice. The in-service return of experience dealing with dielectric failures is analyzed then the dielectric diagnostic techniques now available are briefly presented with their possibilities and limitations. According to this survey, the expectations of EDF from these diagnostic techniques as well as the new on-site test and on-linemore » monitoring tendencies at EDF are presented.« less

A Monte Carlo modeling on charging effect for structures with arbitrary geometries

NASA Astrophysics Data System (ADS)

Li, C.; Mao, S. F.; Zou, Y. B.; Li, Yong Gang; Zhang, P.; Li, H. M.; Ding, Z. J.

2018-04-01

Insulating materials usually suffer charging effects when irradiated by charged particles. In this paper, we present a Monte Carlo study on the charging effect caused by electron beam irradiation for sample structures with any complex geometry. When transporting in an insulating solid, electrons encounter elastic and inelastic scattering events; the Mott cross section and a Lorentz-type dielectric function are respectively employed to describe such scatterings. In addition, the band gap and the electron–long optical phonon interaction are taken into account. The electronic excitation in inelastic scattering causes generation of electron–hole pairs; these negative and positive charges establish an inner electric field, which in turn induces the drift of charges to be trapped by impurities, defects, vacancies etc in the solid, where the distributions of trapping sites are assumed to have uniform density. Under charging conditions, the inner electric field distorts electron trajectories, and the surface electric potential dynamically alters secondary electron emission. We present, in this work, an iterative modeling method for a self-consistent calculation of electric potential; the method has advantages in treating any structure with arbitrary complex geometry, in comparison with the image charge method—which is limited to a quite simple boundary geometry. Our modeling is based on: the combination of the finite triangle mesh method for an arbitrary geometry construction; a self-consistent method for the spatial potential calculation; and a full dynamic description for the motion of deposited charges. Example calculations have been done to simulate secondary electron yield of SiO2 for a semi-infinite solid, the charging for a heterostructure of SiO2 film grown on an Au substrate, and SEM imaging of a SiO2 line structure with rough surfaces and SiO2 nanoparticles with irregular shapes. The simulations have explored interesting interlaced charge layer distribution underneath the nanoparticle surface and the mechanism by which it is produced.

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

NASA Astrophysics Data System (ADS)

Arslan, Engin; Bütün, Serkan; Şafak, Yasemin; Ozbay, Ekmel

2010-12-01

We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al0.83In0.17N/AlN/GaN heterostructures. C- V and G/ ω- V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal-AlInN surface. The density ( D t) and time constant ( τ t) of the surface trap states have been determined as a function of energy separation from the conduction-band edge ( E c - E t). The D st and τ st values of the surface trap states for the unpassivated samples were found to be D_{{st}} \\cong (4 - 13) × 10^{12} {eV}^{ - 1} {cm}^{ - 2} and τ st ≈ 3 μs to 7 μs, respectively. For the passivated sample, D st decreased to 1.5 × 10^{12} {eV}^{ - 1} {cm}^{ - 2} and τ st to 1.8 μs to 2 μs. The density of surface trap states in Al0.83In0.17N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN x passivation, indicating that the SiN x insulator layer between the metal contact and the surface of the Al0.83In0.17N layer can passivate surface states.

Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles

NASA Astrophysics Data System (ADS)

Lindström, A.; Klintenberg, M.; Sanyal, B.; Mirbt, S.

2015-08-01

The coexistence in Te-rich CdTe of substitutional Cl-dopants, ClTe, which act as donors, and Cd vacancies, VC d - 1 , which act as electron traps, was studied from first principles utilising the HSE06 hybrid functional. We find ClTe to preferably bind to VC d - 1 and to form an acceptor complex, (ClTe-VCd)-1. The complex has a (0,-1) charge transfer level close to the valence band and shows no trap state (deep level) in the band gap. During the complex formation, the defect state of VCd-1 is annihilated and leaves the Cl-doped CdTe bandgap without any trap states (self-purification). We calculate Cl-doped CdTe to be semi-insulating with a Fermi energy close to midgap. We calculate the formation energy of the complex to be sufficiently low to allow for spontanous defect formation upon Cl-doping (self-compensation). In addition, we quantitatively analyse the geometries, DOS, binding energies and formation energies of the (ClTe-VCd) complexes.

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

PubMed Central

Šedivý, L.; Čížek, J.; Belas, E.; Grill, R.; Melikhova, O.

2016-01-01

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies . It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe:Cl, and in CdZnTe:Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the density, subsequent annealing in Te pressure restores . The CdTe:Cl contains negatively-charged shallow traps interpreted as Rydberg states of A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities. PMID:26860684

Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shalimova, M. B., E-mail: shamb@samsu.ru; Sachuk, N. V.

2015-08-15

The degradation of the characteristics of silicon metal-oxide-semiconductor (MOS) structures with oxides of rare-earth elements under the effect of electric fields with intensities of 0.1–4 MV/cm during the course of electroforming is studied. A specific feature of electroforming consists in the possibility of multiple switching of the structures from the insulating state to the low-resistivity one and back. The temporal characteristics of the degradation of MOS structures during the course of electroforming are exponential. The current-voltage characteristics follow the power law in the range of 0.2–3 V; the effect of an electric field brings about a variation in the distributionmore » of the energy density of traps responsible for currents limited by space charge. It is established that multiple cycles of electroforming lead to an increase in the density of surface states at the Si-oxide interface and to a variation in the energy position of the trap levels, which affects the charge state of the traps.« less

Evaluations of sampling methods for darkling beetles (Alphitobius diaperinus) in the litter of turkey and broiler houses.

PubMed

Safrit, R D; Axtell, R C

1984-12-01

Materials placed on the litter in turkey and broiler houses were evaluated as sampling devices for the larvae and adults of Alphitobius diaperinus (lesser mealworm or darkling beetle). Insects harbored in, on, and between pieces of the materials were counted after 1-week exposure. Pan traps consisting of two stacked pieces of 1.3-cm thick foil-covered polyisocyanurate insulation (Celotex) placed under a protective metal pan staked to the litter surface was a more effective sampling device than pan traps using thicker (5 cm) Celotex, 3.8 cm thick polystyrene (Styrofoam), or two stacked pieces of wood. A tube trap consisting of rolled fluted corrugated cardboard inserted in a section of polyvinyl chloride pipe was as effective a sampling device as the two pieces of Celotex in a pan trap and was more convenient to use. Six pieces of corrugated cardboard stacked under a pan caught larger numbers of beetle larvae and adults but was awkward to handle and impractical. Placement of sampling devices in the major subhabitats (open center, near walls, near feeders, and near waterers) in turkey and broiler houses affected catches of beetle larvae and adults. The open center area was satisfactory and most convenient.

Effects of magnetization on fusion product trapping and secondary neutron spectra

DOE PAGES

Knapp, Patrick F.; Schmit, Paul F.; Hansen, Stephanie B.; ...

2015-05-14

In magnetizing the fusion fuel in inertial confinement fusion (ICF) systems, we found that the required stagnation pressure and density can be relaxed dramatically. This happens because the magnetic field insulates the hot fuel from the cold pusher and traps the charged fusion burn products. This trapping allows the burn products to deposit their energy in the fuel, facilitating plasma self-heating. Here, we report on a comprehensive theory of this trapping in a cylindrical DD plasma magnetized with a purely axial magnetic field. Using this theory, we are able to show that the secondary fusion reactions can be used tomore » infer the magnetic field-radius product, BR, during fusion burn. This parameter, not ρR, is the primary confinement parameter in magnetized ICF. Using this method, we analyze data from recent Magnetized Liner InertialFusion experiments conducted on the Z machine at Sandia National Laboratories. Furthermore, we show that in these experiments BR ≈ 0.34(+0.14/-0.06) MG · cm, a ~ 14× increase in BR from the initial value, and confirming that the DD-fusion tritons are magnetized at stagnation. Lastly, this is the first experimental verification of charged burn product magnetization facilitated by compression of an initial seed magnetic flux.« less

Mean-Field Scaling of the Superfluid to Mott Insulator Transition in a 2D Optical Superlattice.

PubMed

Thomas, Claire K; Barter, Thomas H; Leung, Tsz-Him; Okano, Masayuki; Jo, Gyu-Boong; Guzman, Jennie; Kimchi, Itamar; Vishwanath, Ashvin; Stamper-Kurn, Dan M

2017-09-08

The mean-field treatment of the Bose-Hubbard model predicts properties of lattice-trapped gases to be insensitive to the specific lattice geometry once system energies are scaled by the lattice coordination number z. We test this scaling directly by comparing coherence properties of ^{87}Rb gases that are driven across the superfluid to Mott insulator transition within optical lattices of either the kagome (z=4) or the triangular (z=6) geometries. The coherent fraction measured for atoms in the kagome lattice is lower than for those in a triangular lattice with the same interaction and tunneling energies. A comparison of measurements from both lattices agrees quantitatively with the scaling prediction. We also study the response of the gas to a change in lattice geometry, and observe the dynamics as a strongly interacting kagome-lattice gas is suddenly "hole doped" by introducing the additional sites of the triangular lattice.

Magnon edge states in the hardcore- Bose-Hubbard model.

PubMed

Owerre, S A

2016-11-02

Quantum Monte Carlo (QMC) simulation has uncovered nonzero Berry curvature and bosonic edge states in the hardcore-Bose-Hubbard model on the gapped honeycomb lattice. The competition between the chemical potential and staggered onsite potential leads to an interesting quantum phase diagram comprising the superfluid phase, Mott insulator, and charge density wave insulator. In this paper, we present a semiclassical perspective of this system by mapping to a spin-1/2 quantum XY model. We give an explicit analytical origin of the quantum phase diagram, the Berry curvatures, and the edge states using semiclassical approximations. We find very good agreement between the semiclassical analyses and the QMC results. Our results show that the topological properties of the hardcore-Bose-Hubbard model are the same as those of magnon in the corresponding quantum spin system. Our results are applicable to systems of ultracold bosonic atoms trapped in honeycomb optical lattices.

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimelymore » dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.« less

Memory operation mechanism of fullerene-containing polymer memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki

2015-03-09

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to themore » width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.« less

High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

NASA Astrophysics Data System (ADS)

Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2018-02-01

Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

Insulation Material

NASA Technical Reports Server (NTRS)

1984-01-01

Manufactured by Hitco Materials Division of Armco, Inc. a ceramic fiber insulation material known as Refrasil has been used extensively as a heat-absorbing ablative reinforcement for such space systems as rocket motor nozzles, combustion chambers, and re-entry shields. Refrasil fibers are highly porous and do not melt or vaporize until fibers exceed 3,100 degrees Fahrenheit. Due to these and other properties, Refrasil has found utility in a number of industrial high temperature applications where glass, asbestos and other materials fail. Hitco used this insulation to assist Richardson Co., Inc. in the manufacturing of hard rubber and plastic molded battery cases.

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

DTIC Science & Technology

1982-02-01

Ephrath F.L. Pesavento MDA903-81-C-0100 D.J. DiMaria C. Falcony D.R. Young 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT, PROJECT...Etching (RIE) Apparatus can generate neutral electron traps in SiO 2. The paper by Ephrath, DiMaria and Pesavento discusses the dependence of the...layers. Considerable work remains to be done to correlate the results of these various investigations. A report by Pesavento , Lai and Calise is included

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

DTIC Science & Technology

2016-04-01

DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED PHOTON PAIRS SOURCE FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS NORTHWESTERN UNIVERSITY...REPORT TYPE FINAL TECHNICAL REPORT 3. DATES COVERED (From - To) APRIL 2015 – DEC 2015 4. TITLE AND SUBTITLE DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED...in developing a new source for the production of correlated/entangled photon pairs based on the unique nanolayer properties of topological insulator

A simple shape-free model for pore-size estimation with positron annihilation lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Wada, Ken; Hyodo, Toshio

2013-06-01

Positron annihilation lifetime spectroscopy is one of the methods for estimating pore size in insulating materials. We present a shape-free model to be used conveniently for such analysis. A basic model in classical picture is modified by introducing a parameter corresponding to an effective size of the positronium (Ps). This parameter is adjusted so that its Ps-lifetime to pore-size relation merges smoothly with that of the well-established Tao-Eldrup model (with modification involving the intrinsic Ps annihilation rate) applicable to very small pores. The combined model, i.e., modified Tao-Eldrup model for smaller pores and the modified classical model for larger pores, agrees surprisingly well with the quantum-mechanics based extended Tao-Eldrup model, which deals with Ps trapped in and thermally equilibrium with a rectangular pore.

Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Resfa, A.; Smahi, Bourzig Y.; Menezla, Brahimi. R.

2012-09-01

The current through a metal-semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission-diffusion (TED) of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current-voltage (I-V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I-V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.

Evaluation of Wiring Constructions for Space Applications

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Stavnes, Mark W.; Dickman, John E.; Burkhardt, Linda A.; Woodford, Lynn M.; Ide, James R.; Muegge, ED

1994-01-01

A NASA Office of Safety and Mission Assurance (OS&MA) program to develop lightweight, reliable, and safe wiring insulations for aerospace applications is being performed by the NASA Lewis Research Center (LeRC). As part of this effort, a new wiring construction utilizing high strength PTFE (poly tetrafluoroethylene) as the insulation has been tested and compared with the existing military standard polyimide-based MIL-W-81381 wire construction. Electrical properties which were investigated included ac corona inception and extinction voltages (sea level and 60,000 feet), time/current to smoke, and wire fusing time. The two constructions were also characterized in terms of their mechanical properties of flexural strength, abrasion resistance (23 C and 150 C), and dynamic cut-through (23 C and 200 C). The results obtained in this testing effort are presented and discussed in this paper.

Ambient-temperature trap/release of arsenic by dielectric barrier discharge and its application to ultratrace arsenic determination in surface water followed by atomic fluorescence spectrometry

USDA-ARS?s Scientific Manuscript database

A novel dielectric barrier discharge reactor (DBDR) was utilized to trap/release arsenic coupled to hydride generation atomic fluorescence spectrometry (HGAFS). On the DBD principle, the precise and accurate control of trap/release procedures was fulfilled at ambient temperature, and an analytical m...

Electrical insulating liquid: A review

NASA Astrophysics Data System (ADS)

Mahanta, Deba Kumar; Laskar, Shakuntala

Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

Electricity Breakdown Management for Sarawak Energy: Use of Condition-Based Equipment for Detection of Defective Insulator

NASA Astrophysics Data System (ADS)

Tan, J. K.; Abas, N.

2017-07-01

Managing electricity breakdown is vital since an outage causes economic losses for customers and the utility companies. However, electricity breakdown is unavoidable due to some internal or external factors beyond our control. Electricity breakdown on overhead lines tend occur more frequently because it is prone to external disturbances such as animal, overgrown vegetation and defective pole top accessories. In Sarawak Energy Berhad (SEB), majority of the network are composed of overhead lines and hence, is more prone to failure. Conventional method of equipment inspection and fault finding are not effective to quickly identify the root cause of failure. SEB has engaged the use of corona discharge camera as condition-based monitoring equipment to carry out condition based inspection on the line in order to diagnose the condition of the lines prior to failure. Experimental testing has been carried out to determine the correlation between the corona discharge count and the level of defect on line insulator. The result shall be tabulated and will be used as reference for future scanning and diagnostic on any defect on the lines.

Using impedance measurements for detecting pathogens trapped in an electric field

DOEpatents

Miles, Robin R.

2004-07-20

Impedance measurements between the electrodes in an electric field is utilized to detect the presence of pathogens trapped in the electric field. Since particles trapped in a field using the dielectiphoretic force changes the impedance between the electrodes by changing the dielectric material between the electrodes, the degree of particle trapping can be determined by measuring the impedance. This measurement is used to determine if sufficient pathogen have been collected to analyze further or potentially to identify the pathogen.

Paramagnetic defects and charge trapping behavior of ZrO2 films deposited on germanium by plasma-enhanced CVD

NASA Astrophysics Data System (ADS)

Mahata, C.; Bera, M. K.; Bose, P. K.; Maiti, C. K.

2009-02-01

Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping behavior and chemical nature of defects in ultrathin (~14 nm) high-k ZrO2 dielectric films deposited on p-Ge (1 0 0) substrates at low temperature (<200 °C) by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma at a pressure of ~65 Pa. Both the band and defect-related electron states have been characterized using electron paramagnetic resonance, internal photoemission, capacitance-voltage and current-voltage measurements under UV illumination. Capacitance-voltage and photocurrent-voltage measurements were used to determine the centroid of oxide charge within the high-k gate stack. The observed shifts in photocurrent response of the Al/ZrO2/GeO2/p-Ge metal-insulator-semiconductor (MIS) capacitors indicate the location of the centroids to be within the ZrO2 dielectric near to the gate electrode. Moreover, the measured flat band voltage and photocurrent shifts also indicate a large density of traps in the dielectric. The impact of plasma nitridation on the interfacial quality of the oxides has been investigated. Different N sources, such as NO and NH3, have been used for nitrogen engineering. Oxynitride samples show a lower defect density and trapping over the non-nitrided samples. The charge trapping and detrapping properties of MIS capacitors under stressing in constant current and voltage modes have been investigated in detail.

A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model

NASA Technical Reports Server (NTRS)

Spicer, D. S.; Emslie, A. G.

1988-01-01

A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.

Interventional MRI: tapering improves the distal sensitivity of the loopless antenna.

PubMed

Qian, Di; El-Sharkawy, AbdEl-Monem M; Atalar, Ergin; Bottomley, Paul A

2010-03-01

The "loopless antenna" is an interventional MRI detector consisting of a tuned coaxial cable and an extended inner conductor or "whip". A limitation is the poor sensitivity afforded at, and immediately proximal to, its distal end, which is exacerbated by the extended whip length when the whip is uniformly insulated. It is shown here that tapered insulation dramatically improves the distal sensitivity of the loopless antenna by pushing the current sensitivity toward the tip. The absolute signal-to-noise ratio is numerically computed by the electromagnetic method-of-moments for three resonant 3-T antennae with no insulation, uniform insulation, and with linearly tapered insulation. The analysis shows that tapered insulation provides an approximately 400% increase in signal-to-noise ratio in trans-axial planes 1 cm from the tip and a 16-fold increase in the sensitive area as compared to an equivalent, uniformly insulated antenna. These findings are directly confirmed by phantom experiments and by MRI of an aorta specimen. The results demonstrate that numerical electromagnetic signal-to-noise ratio analysis can accurately predict the loopless detector's signal-to-noise ratio and play a central role in optimizing its design. The manifold improvement in distal signal-to-noise ratio afforded by redistributing the insulation should improve the loopless antenna's utility for interventional MRI. (c) 2010 Wiley-Liss, Inc.

Performance of Partially Fluorinated Polyimide Insulation for Aerospace Applications

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Stavnes, Mark W.; Ide, James R.; Muegge, ED

1995-01-01

Polyimide has been used extensively as the primary wiring insulation in commercial planes, military aircraft, and space vehicles due to its low weight, high service temperature, and good dielectric strength. New failure modes, however, have been associated with the use of polyimide because of the susceptibility of the insulation to pyrolization and arc tracking. A new wiring construction utilizing partially fluorinated polyimide insulation has been tested and compared with the standard military polyimide wire. Electrical properties which were investigated include AC corona inception and extinction voltages (sea level and 60,000 feet), time/current to smoke, and wire fusing time. The two constructions were also characterized in terms of their mechanical properties including abrasion resistance, dynamic cut through, and notch propagation. These test efforts and the results obtained are presented and discussed.

Performance of partially fluorinated polyimide insulation for aerospace applications

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Stavnes, Mark W.; Ide, James R.; Muegge, Ed

1995-08-01

Polyimide has been used extensively as the primary wiring insulation in commercial planes, military aircraft, and space vehicles due to its low weight, high service temperature, and good dielectric strength. New failure modes, however, have been associated with the use of polyimide because of the susceptibility of the insulation to pyrolization and arc tracking. A new wiring construction utilizing partially fluorinated polyimide insulation has been tested and compared with the standard military polyimide wire. Electrical properties which were investigated include AC corona inception and extinction voltages (sea level and 60,000 feet), time/current to smoke, and wire fusing time. The two constructions were also characterized in terms of their mechanical properties including abrasion resistance, dynamic cut through, and notch propagation. These test efforts and the results obtained are presented and discussed.

Use of a Novel Fluidics Microbead Trap/Flow-cell Enhances Speed and Sensitivity of Bead-Based Bioassays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozanich, Rich M.; Antolick, Kathryn C.; Bruckner-Lea, Cindy J.

2007-09-15

Automated devices and methods for biological sample preparation often utilize surface functionalized microbeads (superparamagnetic or non-magnetic) to allow capture, purification and pre-concentration of trace amounts of proteins, cells, or nucleic acids (DNA/RNA) from complex samples. We have developed unique methods and hardware for trapping either magnetic or non-magnetic functionalized beads that allow samples and reagents to be efficiently perfused over a micro-column of beads. This approach yields enhanced mass transport and up to 5-fold improvements in assay sensitivity or speed, dramatically improving assay capability relative to assays conducted in more traditional “batch modes” (i.e., in tubes or microplate wells). Summarymore » results are given that highlight the analytical performance improvements obtained for automated microbead processing systems utilizing novel microbead trap/flow-cells for various applications, including: 1) simultaneous capture of multiple cytokines using an antibody-coupled polystyrene bead assay with subsequent flow cytometry detection; 2) capture of nucleic acids using oligonucleotide coupled polystyrene beads with flow cytometry detection; and 3) capture of Escherichia coli 0157:H7 (E. coli) from 50 mL sample volumes using antibody-coupled superparamagnetic microbeads with subsequent culturing to assess capture efficiency.« less

Fiber-Reinforced Epoxy Composites and Methods of Making Same Without the Use of Oven or Autoclave

NASA Technical Reports Server (NTRS)

Barnell, Thomas J. (Inventor); Rauscher, Michael D. (Inventor); Stienecker, Rick D. (Inventor); Nickerson, David M. (Inventor); Tong, Tat H. (Inventor)

2016-01-01

Method embodiments for producing a fiber-reinforced epoxy composite comprise providing a mold defining a shape for a composite, applying a fiber reinforcement over the mold, covering the mold and fiber reinforcement thereon in a vacuum enclosure, performing a vacuum on the vacuum enclosure to produce a pressure gradient, insulating at least a portion of the vacuum enclosure with thermal insulation, infusing the fiber reinforcement with a reactive mixture of uncured epoxy resin and curing agent under vacuum conditions, wherein the reactive mixture of uncured epoxy resin and curing agent generates exothermic heat, and producing the fiber-reinforced epoxy composite having a glass transition temperature of at least about 100.degree. C. by curing the fiber reinforcement infused with the reactive mixture of uncured epoxy resin and curing agent by utilizing the exothermically generated heat, wherein the curing is conducted inside the thermally insulated vacuum enclosure without utilization of an external heat source or an external radiation source.

Improvements of Real Time First Motion Focal Mechanism and Noise Characteristics of New Sites at the Puerto Rico Seismic Network

NASA Astrophysics Data System (ADS)

Williams, D. M.; Lopez, A. M.; Huerfano, V.; Lugo, J.; Cancel, J.

2011-12-01

Seismic networks need quick and efficient ways to obtain information related to seismic events for the purposes of seismic activity monitoring, risk assessment, and scientific knowledge among others. As part of an IRIS summer internship program, two projects were performed to provide a tool for quick faulting mechanism and improve seismic data at the Puerto Rico Seismic Network (PRSN). First, a simple routine to obtain a focal mechanisms, the geometry of the fault, based on first motions was developed and implemented for data analysts routine operations at PRSN. The new tool provides the analyst a quick way to assess the probable faulting mechanism that occurred while performing the interactive earthquake location procedure. The focal mechanism is generated on-the-fly when data analysts pick P wave arrivals onsets and motions. Once first motions have been identified, an in-house PRSN utility is employed to obtain the double couple representation and later plotted using GMT's psmeca utility. Second, we addressed the issue of seismic noise related to thermal fluctuations inside seismic vaults. Seismic sites can be extremely noisy due to proximity to cultural activities and unattended thermal fluctuations inside sensor housings, thus resulting in skewed readings. In the past, seismologists have used different insulation techniques to reduce the amount of unwanted noise that a seismometers experience due to these thermal changes with items such as Styrofoam, and fiber glass among others. PRSN traditionally uses Styrofoam boxes to cover their seismic sensors, however, a proper procedure to test how these method compare to other new techniques has never been approached. The deficiency of properly testing these techniques in the Caribbean and especially Puerto Rico is that these thermal fluctuations still happen because of the intense sun and humidity. We conducted a test based on the methods employed by the IRIS Transportable Array, based on insulation by sand burial of the sensor. Two Guralps CMG-3T's connected to RefTek's 150 digitizers were used at PRSN's MPR site seismic vault to compare the two types of insulation. Two temperature loggers were placed along each seismic sensor for a period of one week to observe how much thermal fluctuations occur in each insulation method and then compared its capability for noise reduction due to thermal fluctuations. With only a single degree Celsius fluctuation inside the sand (compared to almost twice that value for the foam) the sensor buried in sand provided the best insulation for the seismic vault. In addition, the quality of the data was analyzed by comparing both sensors using PQLX. We show results of this analysis and also provide a site characteristic of new stations to be included in the daily earthquake location operations at the PRSN.

Intrinsic charge trapping in amorphous oxide films: status and challenges

NASA Astrophysics Data System (ADS)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Lightning Impulse Breakdown Characteristics and Electrodynamic Process of Insulating Vegetable Oil-Based Nanofluid

NASA Astrophysics Data System (ADS)

Li, Jian; Zhang, Zhao-Tao; Zou, Ping; Du, Bin; Liao, Rui-Jin

2012-06-01

Insulating vegetable oils are considered environment-friendly and fire-resistant substitutes for insulating mineral oils. This paper presents the lightning impulse breakdown characteristic of insulating vegetable oil and insulating vegetable oil-based nanofluids. It indicates that Fe3O4 nanoparticles can increase the negative lightning impulse breakdown voltages of insulating vegetable oil by 11.8% and positive lightning impulse breakdown voltages by 37.4%. The propagation velocity of streamer is reduced by the presence of nanoparticles. The propagation velocities of streamer to positive and negative lightning impulse breakdown in the insulating vegetable oil-based nanofluids are 21.2% and 14.4% lesser than those in insulating vegetable oils, respectively. The higher electrical breakdown strength and lower streamer velocity is explained by the charging dynamics of nanoparticles in insulating vegetable oil. Space charge build-up and space charge distorted filed in point-sphere gap is also described. The field strength is reduced at the streamer tip due to the low mobility of negative nanoparticles.

Diagnosis of Insulation Condition of MV Switchgears by Application of Different Partial Discharge Measuring Methods and Sensors

PubMed Central

2018-01-01

Partial discharges (PD) measurement provides valuable information for the condition assessment of the insulation status of high-voltage (HV) electrical installations. During the last three decades, several PD sensors and measuring techniques have been developed to perform accurate diagnostics when PD measurements are carried out on-site and on-line. For utilities, the most attractive characteristics of on-line measurements are that once the sensors are installed in the grid, the electrical service is uninterrupted and that electrical systems are tested in real operating conditions. In medium-voltage (MV) and HV installations, one of the critical points where an insulation defect can occur is inside metal-clad switchgears (including the cable terminals connected to them). Thus, this kind of equipment is increasingly being monitored to carry out proper maintenance based on their condition. This paper presents a study concerning the application of different electromagnetic measuring techniques (compliant with IEC 62478 and IEC 60270 standards), together with the use of suitable sensors, which enable the evaluation of the insulation condition mainly in MV switchgears. The main scope is to give a general overview about appropriate types of electromagnetic measuring methods and sensors to be applied, while considering the level of detail and accuracy in the diagnosis and the particular fail-save requirements of the electrical installations where the switchgears are located. PMID:29495601

Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

2016-05-01

We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

A high fusion power gain tandem mirror

NASA Astrophysics Data System (ADS)

Fowler, T. K.; Moir, R. W.; Simonen, T. C.

2017-10-01

Utilizing advances in high field superconducting magnet technology and microwave gyrotrons we illustrate the possibility of a high power gain (Q = 10-20) tandem mirror fusion reactor. Inspired by recent Gas Dynamic Trap (GDT) achievements we employ a simple axisymmetric mirror magnet configuration. We consider both DT and cat. DD fuel options that utilize existing as well as future technology development. We identify subjects requiring further study such as hot electron physics, trapped particle modes and plasma startup.

Electrochemically Induced Insulator-Metal-Insulator Transformations of Vanadium Dioxide Nanocrystal Films

NASA Astrophysics Data System (ADS)

Milliron, Delia; Dahlman, Clayton; Leblanc, Gabriel; Bergerud, Amy

Vanadium dioxide (VO2) undergoes significant optical, electronic, and structural changes as it transforms between the low-temperature monoclinic and high-temperature rutile phases. The low-temperature state is insulating and transparent, while the high-temperature state is metallic and IR blocking. Alternative stimuli have been utilized to trigger insulator-to-metal transformations in VO2, including electrochemical gating. Here, VO2 nanocrystal films have been prepared by solution deposition of V2O3 nanocrystals followed by oxidative annealing. Nanocrystalline VO2 films are electrochemically reduced, inducing changes in their electronic and optical properties. We observe a reversible transition between infrared transparent insulating phases and a darkened metallic phase by in situ visible-near-infrared spectroelectrochemistry and correlate these observations with structural and electronic changes monitored by X-ray absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and conductivity measurements. Reduction causes an initial transformation to a metallic, IR-colored distorted monoclinic phase. However, an unexpected reversible transition from conductive, reduced monoclinic VO2 to an infrared-transparent insulating phase is observed upon further reduction.

Dielectric Properties and Electrodynamic Process of Natural Ester-Based Insulating Nanofluid

NASA Astrophysics Data System (ADS)

Zou, Ping; Li, Jian; Sun, Cai-Xin; Zhang, Zhao-Tao; Liao, Rui-Jin

Natural ester is currently used as an insulating oil and coolant for medium-power transformers. The biodegradability of insulating natural ester makes it a preferable insulation liquid to mineral oils. In this work, Fe3O4 nanoparticles were used along with oleic acid to improve the performance of insulating natural ester. The micro-morphology of Fe3O4 nanoparticles before and after surface modification was observed through transmission electron microscopy. Attenuated total reflection-Fourier transform infrared spectroscopy, thermal gravimetric analysis, and differential thermal analysis were employed to investigate functional groups and their thermal stability on the surface-modified Fe3O4 nanoparticles. Basic dielectric properties of natural ester-based insulating nanofluid were measured. The electrodynamic process in the natural ester-based insulating nanofluid is also presented.

Plasmonically enhanced hot electron based photovoltaic device.

PubMed

Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

2013-03-25

Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Characterization and comparison of EST-SSR and TRAP markers for genetic analysis of the Japanese persimmon Diospyros kaki.

PubMed

Luo, C; Zhang, F; Zhang, Q L; Guo, D Y; Luo, Z R

2013-01-09

We developed and characterized expressed sequence tags (ESTs)-simple sequence repeats (SSRs) and targeted region amplified polymorphism (TRAP) markers to examine genetic relationships in the persimmon genus Diospyros gene pool. In total, we characterized 14 EST-SSR primer pairs and 36 TRAP primer combinations, which were amplified across 20 germplasms of 4 species in the genus Diospyros. We used various genetic parameters, including effective multiplex ratio (EMR), diversity index (DI), and marker index (MI), to test the utility of these markers. TRAP markers gave higher EMR (24.85) but lower DI (0.33), compared to EST-SSRs (EMR = 3.65, DI = 0.34). TRAP gave a very high MI (8.08), which was about 8 times than the MI of EST-SSR (1.25). These markers were utilized for phylogenetic inference of 20 genotypes of Diospyros kaki Thunb. and allied species, with a result that all kaki genotypes clustered closely and 3 allied species formed an independent group. These markers could be further exploited for large-scale genetic relationship inference.

Spectrally reconfigurable integrated multi-spot particle trap.

PubMed

Leake, Kaelyn D; Olson, Michael A B; Ozcelik, Damla; Hawkins, Aaron R; Schmidt, Holger

2015-12-01

Optical manipulation of small particles in the form of trapping, pushing, or sorting has developed into a vast field with applications in the life sciences, biophysics, and atomic physics. Recently, there has been increasing effort toward integration of particle manipulation techniques with integrated photonic structures on self-contained optofluidic chips. Here, we use the wavelength dependence of multi-spot pattern formation in multimode interference (MMI) waveguides to create a new type of reconfigurable, integrated optical particle trap. Interfering lateral MMI modes create multiple trapping spots in an intersecting fluidic channel. The number of trapping spots can be dynamically controlled by altering the trapping wavelength. This novel, spectral reconfigurability is utilized to deterministically move single and multiple particles between different trapping locations along the channel. This fully integrated multi-particle trap can form the basis of high throughput biophotonic assays on a chip.

Design of an autonomous Lunar construction utility vehicle

NASA Technical Reports Server (NTRS)

Ash, Robert L.; Chew, Mason; Dixon, Iain (Editor)

1990-01-01

In order to prepare a site for a manned lunar base, an autonomously operated construction vehicle is necessary. A Lunar Construction Utility Vehicle (LCUV), which utilizes interchangeable construction implements, was designed conceptually. Some elements of the machine were studied in greater detail. Design of an elastic loop track system has advanced to the testing stage. A standard coupling device was designed to insure a proper connection between the different construction tools and the LCUV. Autonomous control of the track drive motors was simulated successfully through the use of a joystick and computer interface. A study of hydrogen-oxygen fuel cells has produced estimates of reactant and product size requirements and identified multi-layer insulation techniques. Research on a 100 kW heat rejection system has determined that it is necessary to house a radiator panel on a utility trailer. The impact of a 720 hr use cycle has produced a very large logistical support lien which requires further study.

Mass spectrometric screening of ligands with lower off-rate from a clicked-based pooled library.

PubMed

Arai, Satoshi; Hirosawa, Shota; Oguchi, Yusuke; Suzuki, Madoka; Murata, Atsushi; Ishiwata, Shin'ichi; Takeoka, Shinji

2012-08-13

This paper describes a convenient screening method using ion trap electrospray ionization mass spectrometry to classify ligands to a target molecule in terms of kinetic parameters. We demonstrate this method in the screening of ligands to a hexahistidine tag from a pooled library synthesized by click chemistry. The ion trap mass spectrometry analysis revealed that higher stabilities of ligand-target complexes in the gas phase were related to lower dissociation rate constants, i.e., off-rates in solution. Finally, we prepared a fluorescent probe utilizing the ligand with lowest off-rate and succeeded in performing single molecule observations of hexahistidine-tagged myosin V walking on actin filaments.

A TE-mode accelerator

NASA Astrophysics Data System (ADS)

Takeuchi, S.; Sakai, K.; Matsumoto, M.; Sugihara, R.

1987-04-01

An accelerator is proposed in which a TE-mode wave is used to drive charged particles in contrast to the usual linear accelerators in which longitudinal electric fields or TM-mode waves are supposed to be utilized. The principle of the acceleration is based on the V(p) x B acceleration of a dynamo force acceleration, in which a charged particle trapped in a transverse wave feels a constant electric field (Faraday induction field) and subsequently is accelerated when an appropriate magnetic field is externally applied in the direction perpendicular to the wave propagation. A pair of dielectric plates is used to produce a slow TE mode. The conditions of the particle trapping the stabilization of the particle orbit are discussed.

Mechanical engineering and design criteria for the Magnetically Insulated Transmission Experiment Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Staller, G.E.; Hamilton, I.D.; Aker, M.F.

1978-02-01

A single-unit electron beam accelerator was designed, fabricated, and assembled in Sandia's Technical Area V to conduct magnetically insulated transmission experiments. Results of these experiments will be utilized in the future design of larger, more complex accelerators. This design makes optimum use of existing facilities and equipment. When designing new components, possible future applications were considered as well as compatibility with existing facilities and hardware.

Oxygen radical absorbance capacity (ORAC) of cyclodextrin-solubilized flavonoids, resveratrol and astaxanthin as measured with the ORAC-EPR method

PubMed Central

Sueishi, Yoshimi; Ishikawa, Misa; Yoshioka, Daisuke; Endoh, Nobuyuki; Oowada, Shigeru; Shimmei, Masashi; Fujii, Hirotada; Kotake, Yashige

2012-01-01

Recently, we proposed an oxygen radical absorbance capacity method that directly quantifies the antioxidant’s scavenging capacity against free radicals and evaluated the radical scavenging abilities for water soluble antioxidant compounds. In this study, we determined the radical scavenging abilities of lipophilic antioxidants which were solubilized by cyclodextrin in water. Commonly employed fluorescence-based method measures the antioxidant’s protection capability for the fluorescent probe, while we directly quantify free-radical level using electron paramagnetic resonance spin trapping technique. In addition, the spin trapping-based method adopted controlled UV-photolysis of azo-initiator for free radical generation, but in fluorescence-based method, thermal decomposition of azo-initiator was utilized. We determined the radical scavenging abilities of seven well-known lipophilic antioxidants (five flavonoids, resveratrol and astaxanthin), using methylated β-cyclodextrin as a solubilizer. The results indicated that the agreement between spin trapping-based and fluorescence-based values was only fair partly because of a large variation in the previous fluorescence-based data. Typical radical scavenging abilities in trolox equivalent unit are: catechin 0.96; epicatechin 0.94; epigallocatechin gallate 1.3; kaempferol 0.37; myricetin 3.2; resveratrol 0.64; and astaxanthin 0.28, indicating that myricetin possesses the highest antioxidant capacity among the compounds tested. We sorted out the possible causes of the deviation between the two methods. PMID:22448093

Oxygen radical absorbance capacity (ORAC) of cyclodextrin-solubilized flavonoids, resveratrol and astaxanthin as measured with the ORAC-EPR method.

PubMed

Sueishi, Yoshimi; Ishikawa, Misa; Yoshioka, Daisuke; Endoh, Nobuyuki; Oowada, Shigeru; Shimmei, Masashi; Fujii, Hirotada; Kotake, Yashige

2012-03-01

Recently, we proposed an oxygen radical absorbance capacity method that directly quantifies the antioxidant's scavenging capacity against free radicals and evaluated the radical scavenging abilities for water soluble antioxidant compounds. In this study, we determined the radical scavenging abilities of lipophilic antioxidants which were solubilized by cyclodextrin in water. Commonly employed fluorescence-based method measures the antioxidant's protection capability for the fluorescent probe, while we directly quantify free-radical level using electron paramagnetic resonance spin trapping technique. In addition, the spin trapping-based method adopted controlled UV-photolysis of azo-initiator for free radical generation, but in fluorescence-based method, thermal decomposition of azo-initiator was utilized. We determined the radical scavenging abilities of seven well-known lipophilic antioxidants (five flavonoids, resveratrol and astaxanthin), using methylated β-cyclodextrin as a solubilizer. The results indicated that the agreement between spin trapping-based and fluorescence-based values was only fair partly because of a large variation in the previous fluorescence-based data. Typical radical scavenging abilities in trolox equivalent unit are: catechin 0.96; epicatechin 0.94; epigallocatechin gallate 1.3; kaempferol 0.37; myricetin 3.2; resveratrol 0.64; and astaxanthin 0.28, indicating that myricetin possesses the highest antioxidant capacity among the compounds tested. We sorted out the possible causes of the deviation between the two methods.

Efficient barrier for charge injection in polyethylene by silver nanoparticles/plasma polymer stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milliere, L.; Makasheva, K., E-mail: kremena.makasheva@laplace.univ-tlse.fr; Laurent, C.

2014-09-22

Charge injection from a metal/insulator contact is a process promoting the formation of space charge in polymeric insulation largely used in thick layers in high voltage equipment. The internal charge perturbs the field distribution and can lead to catastrophic failure either through its electrostatic effects or through energetic processes initiated under charge recombination and/or hot electrons effects. Injection is still ill-described in polymeric insulation due to the complexity of the contact between the polymer chains and the electrodes. Barrier heights derived from the metal work function and the polymer electronic affinity do not provide a good description of the measurementsmore » [Taleb et al., IEEE Trans. Dielectr. Electr. Insul. 20, 311–320 (2013)]. Considering the difficulty to describe the contact properties and the need to prevent charge injection in polymers for high voltage applications, we developed an alternative approach by tailoring the interface properties by the silver nanoparticles (AgNPs)/plasma polymer stack, deposited on the polymer film. Due to their small size, the AgNPs, covered by a very thin film of plasma polymer, act as deep traps for the injected charges thereby stabilizing the interface from the point of view of charge injection. After a quick description of the method for elaborating the nanostructured layer near the contact, it is demonstrated how the AgNPs/plasma polymer stack effectively prevents, in a spectacular way, the formation of bulk space charge.« less

Enhanced and selective optical trapping in a slot-graphite photonic crystal.

PubMed

Krishnan, Aravind; Huang, Ningfeng; Wu, Shao-Hua; Martínez, Luis Javier; Povinelli, Michelle L

2016-10-03

Applicability of optical trapping tools for nanomanipulation is limited by the available laser power and trap efficiency. We utilized the strong confinement of light in a slot-graphite photonic crystal to develop high-efficiency parallel trapping over a large area. The stiffness is 35 times higher than our previously demonstrated on-chip, near field traps. We demonstrate the ability to trap both dielectric and metallic particles of sub-micron size. We find that the growth kinetics of nanoparticle arrays on the slot-graphite template depends on particle size. This difference is exploited to selectively trap one type of particle out of a binary colloidal mixture, creating an efficient optical sieve. This technique has rich potential for analysis, diagnostics, and enrichment and sorting of microscopic entities.

Imaging MS Methodology for More Chemical Information in Less Data Acquisition Time Utilizing a Hybrid Linear Ion Trap-Orbitrap Mass Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perdian, D. C.; Lee, Young Jin

2010-11-15

A novel mass spectrometric imaging method is developed to reduce the data acquisition time and provide rich chemical information using a hybrid linear ion trap-orbitrap mass spectrometer. In this method, the linear ion trap and orbitrap are used in tandem to reduce the acquisition time by incorporating multiple linear ion trap scans during an orbitrap scan utilizing a spiral raster step plate movement. The data acquisition time was decreased by 43-49% in the current experiment compared to that of orbitrap-only scans; however, 75% or more time could be saved for higher mass resolution and with a higher repetition rate laser.more » Using this approach, a high spatial resolution of 10 {micro}m was maintained at ion trap imaging, while orbitrap spectra were acquired at a lower spatial resolution, 20-40 {micro}m, all with far less data acquisition time. Furthermore, various MS imaging methods were developed by interspersing MS/MS and MSn ion trap scans during orbitrap scans to provide more analytical information on the sample. This method was applied to differentiate and localize structural isomers of several flavonol glycosides from an Arabidopsis flower petal in which MS/MS, MSn, ion trap, and orbitrap images were all acquired in a single data acquisition.« less

Picosecond time-resolved photoluminescence using picosecond excitation correlation spectroscopy

NASA Astrophysics Data System (ADS)

Johnson, M. B.; McGill, T. C.; Hunter, A. T.

1988-03-01

We present a study of the temporal decay of photoluminescence (PL) as detected by picosecond excitation correlation spectroscopy (PECS). We analyze the correlation signal that is obtained from two simple models; one where radiative recombination dominates, the other where trapping processes dominate. It is found that radiative recombination alone does not lead to a correlation signal. Parallel trapping type processes are found to be required to see a signal. To illustrate this technique, we examine the temporal decay of the PL signal for In-alloyed, semi-insulating GaAs substrates. We find that the PL signal indicates a carrier lifetime of roughly 100 ps, for excitation densities of 1×1016-5×1017 cm-3. PECS is shown to be an easy technique to measure the ultrafast temporal behavior of PL processes because it requires no ultrafast photon detection. It is particularly well suited to measuring carrier lifetimes.

Hantavirus infections among overnight visitors to Yosemite National Park, California, USA, 2012.

PubMed

Núñez, Jonathan J; Fritz, Curtis L; Knust, Barbara; Buttke, Danielle; Enge, Barryett; Novak, Mark G; Kramer, Vicki; Osadebe, Lynda; Messenger, Sharon; Albariño, César G; Ströher, Ute; Niemela, Michael; Amman, Brian R; Wong, David; Manning, Craig R; Nichol, Stuart T; Rollin, Pierre E; Xia, Dongxiang; Watt, James P; Vugia, Duc J

2014-03-01

In summer 2012, an outbreak of hantavirus infections occurred among overnight visitors to Yosemite National Park in California, USA. An investigation encompassing clinical, epidemiologic, laboratory, and environmental factors identified 10 cases among residents of 3 states. Eight case-patients experienced hantavirus pulmonary syndrome, of whom 5 required intensive care with ventilatory support and 3 died. Staying overnight in a signature tent cabin (9 case-patients) was significantly associated with becoming infected with hantavirus (p<0.001). Rodent nests and tunnels were observed in the foam insulation of the cabin walls. Rodent trapping in the implicated area resulted in high trap success rate (51%), and antibodies reactive to Sin Nombre virus were detected in 10 (14%) of 73 captured deer mice. All signature tent cabins were closed and subsequently dismantled. Continuous public awareness and rodent control and exclusion are key measures in minimizing the risk for hantavirus infection in areas inhabited by deer mice.

Second Generation Novel High Temperature Commercial Receiver & Low Cost High Performance Mirror Collector for Parabolic Solar Trough

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettenheim, Joel

Norwich Technologies (NT) is developing a disruptively superior solar field for trough concentrating solar power (CSP). Troughs are the leading CSP technology (85% of installed capacity), being highly deployable and similar to photovoltaic (PV) systems for siting. NT has developed the SunTrap receiver, a disruptive alternative to vacuum-tube concentrating solar power (CSP) receivers, a market currently dominated by the Schott PTR-70. The SunTrap receiver will (1) operate at higher temperature (T) by using an insulated, recessed radiation-collection system to overcome the energy losses that plague vacuum-tube receivers at high T, (2) decrease acquisition costs via simpler structure, and (3) dramaticallymore » increase reliability by eliminating vacuum. It offers comparable optical efficiency with thermal loss reduction from ≥ 26% (at presently standard T) to ≥ 55% (at high T), lower acquisition costs, and near-zero O&M costs.« less

Hantavirus Infections among Overnight Visitors to Yosemite National Park, California, USA, 2012

PubMed Central

Núñez, Jonathan J.; Fritz, Curtis L.; Knust, Barbara; Buttke, Danielle; Enge, Barryett; Novak, Mark G.; Kramer, Vicki; Osadebe, Lynda; Messenger, Sharon; Albariño, César G.; Ströher, Ute; Niemela, Michael; Amman, Brian R.; Wong, David; Manning, Craig R.; Nichol, Stuart T.; Rollin, Pierre E.; Xia, Dongxiang; Watt, James P.

2014-01-01

In summer 2012, an outbreak of hantavirus infections occurred among overnight visitors to Yosemite National Park in California, USA. An investigation encompassing clinical, epidemiologic, laboratory, and environmental factors identified 10 cases among residents of 3 states. Eight case-patients experienced hantavirus pulmonary syndrome, of whom 5 required intensive care with ventilatory support and 3 died. Staying overnight in a signature tent cabin (9 case-patients) was significantly associated with becoming infected with hantavirus (p<0.001). Rodent nests and tunnels were observed in the foam insulation of the cabin walls. Rodent trapping in the implicated area resulted in high trap success rate (51%), and antibodies reactive to Sin Nombre virus were detected in 10 (14%) of 73 captured deer mice. All signature tent cabins were closed and subsequently dismantled. Continuous public awareness and rodent control and exclusion are key measures in minimizing the risk for hantavirus infection in areas inhabited by deer mice. PMID:24565589

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

2018-02-01

In this work, we have fabricated low-temperature sol-gel spin-coated and oxygen (O2) plasma treated ZrO2 thin film-based metal-insulator-semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density ( D it) comes down to 7.1 × 1010 eV-1 cm-2 from 4 × 1011 eV-1 cm-2, after plasma treatment. The reduction in D it is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position ( E T) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O2 plasma treated films show improved leakage current density as they have been reduced from 5.4 × 10-8 A/cm2 to 1.98 × 10-9 A/cm2 for gate injection mode and 6.4 × 10-8 A/cm2 to 6.3 × 10-10 A/cm2 for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.

Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

NASA Astrophysics Data System (ADS)

Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

2017-05-01

Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Characterization of Textile-Insulated Capacitive Biosensors

PubMed Central

Ng, Charn Loong; Reaz, Mamun Bin Ibne

2017-01-01

Capacitive biosensors are an emerging technology revolutionizing wearable sensing systems and personal healthcare devices. They are capable of continuously measuring bioelectrical signals from the human body while utilizing textiles as an insulator. Different textile types have their own unique properties that alter skin-electrode capacitance and the performance of capacitive biosensors. This paper aims to identify the best textile insulator to be used with capacitive biosensors by analysing the characteristics of 6 types of common textile materials (cotton, linen, rayon, nylon, polyester, and PVC-textile) while evaluating their impact on the performance of a capacitive biosensor. A textile-insulated capacitive (TEX-C) biosensor was developed and validated on 3 subjects. Experimental results revealed that higher skin-electrode capacitance of a TEX-C biosensor yields a lower noise floor and better signal quality. Natural fabric such as cotton and linen were the two best insulating materials to integrate with a capacitive biosensor. They yielded the lowest noise floor of 2 mV and achieved consistent electromyography (EMG) signals measurements throughout the performance test. PMID:28287493

Materials Development and Spin Transport Study of Magnetic Insulator Based Heterostructures

NASA Astrophysics Data System (ADS)

Tang, Chi

The subfield of magnetic insulator (MI) based spintronics is playing a substantial role in modern solid state physics research. Spin current in the MI is propagated in spin wave with a much longer decay length than spin-polarized carriers in conducting ferromagnet. In the MI-based hetereostructures, the adjacent non-magnetic materials can be magnetized in proximity of MI. Therefore, it is a promising system to study exotic transport phenomena such as quantum Anomalous Hall effect in topological insulator and graphene. Rare-earth Iron garnet (ReIG), a class of magnetic insulators with large electronic bandgap and high Curie temperature, stands out among various magnetic insulator materials and have attracted a great deal of attention in recent magnetic insulator based spintronics research. The first chapter of this dissertation gives a brief introduction to the spintronics research by introducing some essential concepts in the spintronics field and the most recent spin transport phenomena. The second chapter of this dissertation summarizes my work in the materials development of ReIG ferrimagnetic insulators, including exquisite control of high quality ultra-flat yttrium iron garnet (YIG) thin films with extremely low magnetic damping and engineering of strain induced robust perpendicular magnetic anisotropy in thulium iron garnet (TIG) and Bi-doped YIG films. The last chapter of this dissertation shows a systematic study in various ReIG based heterostructures, mainly divided into groups: ReIG (YIG & TIG)/heavy metal bilayers (Pd & Pt) and ReIG (YIG & TIG)/Dirac systems (graphene & topological insulator). The magneto-transport study disentangles the contribution from a spin current origin and proximity induced magnetism. Furthermore, the demonstration in the proximity coupling induced high-temperature ferromagnetic phase in low-dimensional Dirac systems, i.e. graphene and topological insulator surface states, provides new possibilities in the future spintronics applications. The modulation on the spin dynamics of magnetic insulator layer by topological insulator surface states is investigated at last, further confirming the superb properties of such magnetic insulator based spintronics systems.

A photophoretic-trap volumetric display

NASA Astrophysics Data System (ADS)

Smalley, D. E.; Nygaard, E.; Squire, K.; van Wagoner, J.; Rasmussen, J.; Gneiting, S.; Qaderi, K.; Goodsell, J.; Rogers, W.; Lindsey, M.; Costner, K.; Monk, A.; Pearson, M.; Haymore, B.; Peatross, J.

2018-01-01

Free-space volumetric displays, or displays that create luminous image points in space, are the technology that most closely resembles the three-dimensional displays of popular fiction. Such displays are capable of producing images in ‘thin air’ that are visible from almost any direction and are not subject to clipping. Clipping restricts the utility of all three-dimensional displays that modulate light at a two-dimensional surface with an edge boundary; these include holographic displays, nanophotonic arrays, plasmonic displays, lenticular or lenslet displays and all technologies in which the light scattering surface and the image point are physically separate. Here we present a free-space volumetric display based on photophoretic optical trapping that produces full-colour graphics in free space with ten-micrometre image points using persistence of vision. This display works by first isolating a cellulose particle in a photophoretic trap created by spherical and astigmatic aberrations. The trap and particle are then scanned through a display volume while being illuminated with red, green and blue light. The result is a three-dimensional image in free space with a large colour gamut, fine detail and low apparent speckle. This platform, named the Optical Trap Display, is capable of producing image geometries that are currently unobtainable with holographic and light-field technologies, such as long-throw projections, tall sandtables and ‘wrap-around’ displays.

Battery-powered, electrocuting trap for stable flies (Diptera: Muscidae).

PubMed

Pickens, L G

1991-11-01

A solar-charged, battery-powered, electrocuting grid was combined with a white plywood base to make a portable, pulsed-current, pest-electrocuting device that attracted and killed stable flies, Stomoxys calcitrans (L.), outdoors. The grid was powered once every 1-2 s by a 0.016-s pulse of 60-Hz alternating current of 4 mA and 9,500 V. Power was turned off at night by a photoresistor. The trap functioned continuously for 14 d with an unrecharged 12-V, 18A/h lawn-tractor battery and killed as many as 4,000 flies per day. Solar cells were used to charge a single 12-V battery continuously that operated 12 grids for a period of 90 d. The grid did not short circuit for any length of time even during heavy rainstorms or when large insects were killed. The incorporation of moiré patterns and the utilization of the correct size, orientation, and placement of wires made the electrocuting grid itself attractive to stable flies. The traps were spaced at distances of up to 120 m from the battery and pulse circuit. The electrocuting traps were more effective than sticky traps and avoided the problems associated with chemicals. They are well suited for use around calf pens, dog kennels, or large animal shelters.

Quantitative telomerase enzyme activity determination using droplet digital PCR with single cell resolution

PubMed Central

Ludlow, Andrew T.; Robin, Jerome D.; Sayed, Mohammed; Litterst, Claudia M.; Shelton, Dawne N.; Shay, Jerry W.; Wright, Woodring E.

2014-01-01

The telomere repeat amplification protocol (TRAP) for the human reverse transcriptase, telomerase, is a PCR-based assay developed two decades ago and is still used for routine determination of telomerase activity. The TRAP assay can only reproducibly detect ∼2-fold differences and is only quantitative when compared to internal standards and reference cell lines. The method generally involves laborious radioactive gel electrophoresis and is not conducive to high-throughput analyzes. Recently droplet digital PCR (ddPCR) technologies have become available that allow for absolute quantification of input deoxyribonucleic acid molecules following PCR. We describe the reproducibility and provide several examples of a droplet digital TRAP (ddTRAP) assay for telomerase activity, including quantitation of telomerase activity in single cells, telomerase activity across several common telomerase positive cancer cells lines and in human primary peripheral blood mononuclear cells following mitogen stimulation. Adaptation of the TRAP assay to digital format allows accurate and reproducible quantification of the number of telomerase-extended products (i.e. telomerase activity; 57.8 ± 7.5) in a single HeLa cell. The tools developed in this study allow changes in telomerase enzyme activity to be monitored on a single cell basis and may have utility in designing novel therapeutic approaches that target telomerase. PMID:24861623

Self-regulated Gd atom trapping in open Fe nanocorrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, R. X.; Liu, Z.; Miao, B. F.

2014-07-01

Utilizing open Fe nanocorrals built by atom manipulation, we demonstrate self-regulated Gd atom trapping in open quantum corrals. The number of Gd atoms trapped is exactly determined by the diameter of the corral. The quantization can be understood as a self-regulating process, arising from the long-range interaction between Gd atoms and the open corral. We illustrate with arrays of open corrals that such atom trapping can suppress unwanted statistical fluctuations. Our approach opens a potential pathway for nanomaterial design and fabrication with atomic-level precision.

Resistive foil edge grading for accelerator and other high voltage structures

DOEpatents

Caporaso, George J.; Sampayan, Stephen F.; Sanders, David M.

2014-06-10

In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

Development of High Temperature Type Vacuum Insulation Panel using Soluble Polyimide and Characteristic Evaluation

NASA Astrophysics Data System (ADS)

Araki, Kuninari; Kamoto, Daigorou; Matsuoka, Shin-Ichi

The utilization is expected from the high-insulated characteristic as a tool for energy saving also in the high temperature insulation fields as in vacuum insulation panels (VIP) in the future. For high temperature, the material composition and process of VIP were reviewed, the SUS foil was adopted as packaging material, and soluble polyimide was developed as the thermo compression bonding material for high temperature VIP at 150°C. To lower the glass-transition temperature (Tg) under 200°C, we elaborated the new soluble polyimide using aliphatic diamine copolymer, and controlled Tg to about 176°C. By making from trial VIP and evaluations, it was possible to be maintain high performance concerning the coefficient of thermal conductivity [λ<0.008 W/(m·K) at 150°C].

Comparative thermal analysis of alternate Cryogenic Fluid Management Experiment (CFME) configurations

NASA Technical Reports Server (NTRS)

Merino, F.; Oneill, R. F.

1980-01-01

The Cryogenic Fluid Management Experiment (CFME) was analyzed to assess the feasibility and advisability of deleting the vapor cooled shield (VCS) from the baseline CFME insulation and pressure control system. Two alternate concepts of CFME insulation and pressure control, neither of which incorporated the VCS, were investigated. The first concept employed a thermodynamic vent system (TVS) to throttle the flow through an internal wall mounted heat exchanger (HX) within the pressure vessel to decrease boiloff and pressure rise rate, while the second concept utilized a TVS without an internal heat exchanger. Only the first concept was viable. Its performance was assessed for a seven day mission and found to be satisfactory. It was also concluded that VCS development costs would be greater than for an internal HX installation. Based upon the above comparisons, the HX was recommended as a replacement for the VCS.

Determining localized garment insulation values from manikin studies: computational method and results.

PubMed

Nelson, D A; Curlee, J S; Curran, A R; Ziriax, J M; Mason, P A

2005-12-01

The localized thermal insulation value expresses a garment's thermal resistance over the region which is covered by the garment, rather than over the entire surface of a subject or manikin. The determination of localized garment insulation values is critical to the development of high-resolution models of sensible heat exchange. A method is presented for determining and validating localized garment insulation values, based on whole-body insulation values (clo units) and using computer-aided design and thermal analysis software. Localized insulation values are presented for a catalog consisting of 106 garments and verified using computer-generated models. The values presented are suitable for use on volume element-based or surface element-based models of heat transfer involving clothed subjects.

Evaluation of various models of propane-powered mosquito traps.

PubMed

Kline, Daniel L

2002-06-01

Large cage and field studies were conducted to determine the efficacy of various models of propane-powered mosquito traps. These traps utilized counterflow technology in conjunction with catalytic combustion to produce attractants (carbon dioxide, water vapor, and heat) and a thermoelectric generator that converted excess heat into electricity for stand-alone operation. The cage studies showed that large numbers of Aedes aegypti and Ochlerotatus taeniorhynchus were captured and that each progressive model resulted in increased trapping efficiency. In several field studies against natural populations of mosquitoes two different propane traps were compared against two other trap systems, the professional (PRO) and counterflow geometry (CFG) traps. In these studies the propane traps consistently caught more mosquitoes than the PRO trap and significantly fewer mosquitoes than the CFG traps. The difference in collection size between the CFG and propane traps was due mostly to Anopheles crucians. In spring 1997 the CFG trap captured 3.6X more An. crucians than the Portable Propane (PP) model and in spring 1998 it captured 6.3X more An. crucians than the Mosquito Magnet Beta-1 (MMB-1) trap. Both the PP and MMB-1 captured slightly more Culex spp. than the CFG trap.

Novel Physical Model for DC Partial Discharge in Polymeric Insulators

NASA Astrophysics Data System (ADS)

Andersen, Allen; Dennison, J. R.

The physics of DC partial discharge (DCPD) continues to pose a challenge to researchers. We present a new physically-motivated model of DCPD in amorphous polymers based on our dual-defect model of dielectric breakdown. The dual-defect model is an extension of standard static mean field theories, such as the Crine model, that describe avalanche breakdown of charge carriers trapped on uniformly distributed defect sites. It assumes the presence of both high-energy chemical defects and low-energy thermally-recoverable physical defects. We present our measurements of breakdown and DCPD for several common polymeric materials in the context of this model. Improved understanding of DCPD and how it relates to eventual dielectric breakdown is critical to the fields of spacecraft charging, high voltage DC power distribution, high density capacitors, and microelectronics. This work was supported by a NASA Space Technology Research Fellowship.

Discrete Time Crystals: Rigidity, Criticality, and Realizations.

PubMed

Yao, N Y; Potter, A C; Potirniche, I-D; Vishwanath, A

2017-01-20

Despite being forbidden in equilibrium, spontaneous breaking of time translation symmetry can occur in periodically driven, Floquet systems with discrete time-translation symmetry. The period of the resulting discrete time crystal is quantized to an integer multiple of the drive period, arising from a combination of collective synchronization and many body localization. Here, we consider a simple model for a one-dimensional discrete time crystal which explicitly reveals the rigidity of the emergent oscillations as the drive is varied. We numerically map out its phase diagram and compute the properties of the dynamical phase transition where the time crystal melts into a trivial Floquet insulator. Moreover, we demonstrate that the model can be realized with current experimental technologies and propose a blueprint based upon a one dimensional chain of trapped ions. Using experimental parameters (featuring long-range interactions), we identify the phase boundaries of the ion-time-crystal and propose a measurable signature of the symmetry breaking phase transition.

Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

PubMed

Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

2011-05-01

Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.

Superconducting power transmission system development. Cable insulation development

NASA Astrophysics Data System (ADS)

1983-09-01

The development of an underground superconducting power transmission system which is economical and technically attractive to the utility industry is discussed. Suitable superconductors and dielectric insulation were developed. Cables several hundred feet long are tested under realistic conditions. Three operating runs of about 2 weeks duration each were accomplished. The 60 Hz steady state performance of the cables under rated conditions was explored. Over voltage endurance tests and emergency level current tests were performed.

Manipulation of biological cells using a microelectromagnet matrix

NASA Astrophysics Data System (ADS)

Lee, H.; Purdon, A. M.; Westervelt, R. M.

2004-08-01

Noninvasive manipulation of biological cells inside a microfluidic channel was demonstrated using a microelectromagnet matrix. The matrix consists of two layers of straight Au wires, aligned perpendicular to each other, that are covered by insulating layers. By adjusting the current in each independent wire, the microelectromagnet matrix can create versatile magnetic field patterns to control the motion of individual cells in fluid. Single or multiple yeast cells attached to magnetic beads were trapped, continuously moved and rotated, and a viable cell was separated from nonviable cells for cell sorting.

Design of an autonomous lunar construction utility vehicle

NASA Technical Reports Server (NTRS)

1990-01-01

In order to prepare a site for a lunar base, an autonomously operated construction vehicle is necessary. Discussed here is a Lunar Construction Utility Vehicle (LCUV), which uses interchangeable construction implements. Design of an elastic loop track system has advanced to the testing stage. A standard coupling device has been designed to insure a proper connection between the different construction tools and the LCUV. Autonomous control of the track drive motors was simulated successfully through the use of a joystick and a computer interface. A study of hydrogen-oxygen fuel cells produced estimates of reactant and product requirements and identified multilayer insulation needs. Research on the 100-kW heat rejection system determined that it is necessary to transport the radiator panel on a utility trailer. Extensive logistical support for the 720 hour use cycle requires further study.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Information measures for a local quantum phase transition: Lattice fermions in a one-dimensional harmonic trap

NASA Astrophysics Data System (ADS)

Zhang, Yicheng; Vidmar, Lev; Rigol, Marcos

2018-02-01

We use quantum information measures to study the local quantum phase transition that occurs for trapped spinless fermions in one-dimensional lattices. We focus on the case of a harmonic confinement. The transition occurs upon increasing the characteristic density and results in the formation of a band-insulating domain in the center of the trap. We show that the ground-state bipartite entanglement entropy can be used as an order parameter to characterize this local quantum phase transition. We also study excited eigenstates by calculating the average von Neumann and second Renyi eigenstate entanglement entropies, and compare the results with the thermodynamic entropy and the mutual information of thermal states at the same energy density. While at low temperatures we observe a linear increase of the thermodynamic entropy with temperature at all characteristic densities, the average eigenstate entanglement entropies exhibit a strikingly different behavior as functions of temperature below and above the transition. They are linear in temperature below the transition but exhibit activated behavior above it. Hence, at nonvanishing energy densities above the ground state, the average eigenstate entanglement entropies carry fingerprints of the local quantum phase transition.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

NASA Astrophysics Data System (ADS)

Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Electro-optic deflectors deliver advantages over acousto-optical deflectors in a high resolution, ultra-fast force-clamp optical trap.

PubMed

Woody, Michael S; Capitanio, Marco; Ostap, E Michael; Goldman, Yale E

2018-04-30

We characterized experimental artifacts arising from the non-linear response of acousto-optical deflectors (AODs) in an ultra-fast force-clamp optical trap and have shown that using electro-optical deflectors (EODs) instead eliminates these artifacts. We give an example of the effects of these artifacts in our ultra-fast force clamp studies of the interaction of myosin with actin filaments. The experimental setup, based on the concept of Capitanio et al. [Nat. Methods 9, 1013-1019 (2012)] utilizes a bead-actin-bead dumbbell held in two force-clamped optical traps which apply a load to the dumbbell to move it at a constant velocity. When myosin binds to actin, the filament motion stops quickly as the total force from the optical traps is transferred to the actomyosin attachment. We found that in our setup, AODs were unsuitable for beam steering due to non-linear variations in beam intensity and deflection angle as a function of driving frequency, likely caused by low-amplitude standing acoustic waves in the deflectors. These aberrations caused instability in the force feedback loops leading to artifactual jumps in the trap position. We demonstrate that beam steering with EODs improves the performance of our instrument. Combining the superior beam-steering capability of the EODs, force acquisition via back-focal-plane interferometry, and dual high-speed FPGA-based feedback loops, we apply precise and constant loads to study the dynamics of interactions between actin and myosin. The same concept applies to studies of other biomolecular interactions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity wasmore » measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.« less

A solution to water vapor in the National Transonic Facility

NASA Technical Reports Server (NTRS)

Gloss, Blair B.; Bruce, Robert A.

1989-01-01

As cryogenic wind tunnels are utilized, problems associated with the low temperature environment are being discovered and solved. Recently, water vapor contamination was discovered in the National Transonic Facility, and the source was shown to be the internal insulation which is a closed-cell polyisocyanurate foam. After an extensive study of the absorptivity characteristics of the NTF thermal insulation, the most practical solution to the problem was shown to be the maintaining of a dry environment in the circuit at all times. Utilizing a high aspect ratio transport model, it was shown that the moisture contamination effects on the supercritical wing pressure distributions were within the accuracy of setting test conditions and as such were considered negligible for this model.

Transformer overload and bubble evolution: Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Addis, G.; Lindgren, S.

1988-06-01

The EPRI workshop on Transformer Overload Characteristics and Bubble Evolution was held to review the findings of investigations over the past 7-8 years to determine whether enough information is now available for utilities to establish safe loading practices. Sixteen papers were presented, including a utility review, physical and dielectric effects of gas and bubble formation from cellulose insulated transformers, transformer life characteristics, gas bubble studies and impulse test on distribution transformers, mathematical modeling of bubble evolution, transformer overload characteristics, variation of PD-strength for oil-paper insulation, survey on maximum safe operating hot spot temperature, and overload management. The meeting concluded withmore » a general discussion covering the existing state of knowledge and the need for additional research. Sixteen papers have been cataloged separately.« less

Transpiration cooled electrodes and insulators for MHD generators

DOEpatents

Hoover, Jr., Delmer Q.

1981-01-01

Systems for cooling the inner duct walls in a magnetohydrodynamic (MHD) generator. The inner face components, adjacent the plasma, are formed of a porous material known as a transpiration material. Selected cooling gases are transpired through the duct walls, including electrically insulating and electrode segments, and into the plasma. A wide variety of structural materials and coolant gases at selected temperatures and pressures can be utilized and the gases can be drawn from the generation system compressor, the surrounding environment, and combustion and seed treatment products otherwise discharged, among many other sources. The conduits conducting the cooling gas are electrically insulated through low pressure bushings and connectors so as to electrically isolate the generator duct from the ground.

Optoelectronic devices, plasmonics, and photonics with topological insulators

NASA Astrophysics Data System (ADS)

Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

2017-03-01

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Single-cell isolation using a DVD optical pickup

PubMed Central

Kasukurti, A.; Potcoava, M.; Desai, S.A.; Eggleton, C.; Marr, D. W. M.

2011-01-01

A low-cost single-cell isolation system incorporating a digital versatile disc burner (DVD RW) optical pickup has been developed. We show that these readily available modules have the required laser power and focusing optics to provide a steady Gaussian beam capable of optically trapping micron-sized colloids and red blood cells. Utility of the pickup is demonstrated through the non-destructive isolation of such particles in a laminar-flow based microfluidic device that captures and translates single microscale objects across streamlines into designated channel exits. In this, the integrated objective lens focusing coils are used to steer the optical trap across the channel, resulting in the isolation of colloids and red blood cells using a very inexpensive off-the-shelf optical component. PMID:21643294

Performance Evaluation of Advanced Retrofit Roof Technologies Using Field-Test Data Phase Three Final Report, Volume 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Kaushik; Childs, Phillip W.; Atchley, Jerald Allen

2015-01-01

This article presents some miscellaneous data from two low-slope and two steep-slope experimental roofs. The low-slope roofs were designed to compare the performance of various roof coatings exposed to natural weatherization. The steep-slope roofs contained different combinations of phase change material, rigid insulation, low emittance surface and above-sheathing ventilation, with standing-seam metal panels on top. The steep-slope roofs were constructed on a series of adjacent attics separated at the gables using thick foam insulation. This article describes phase three (3) of a study that began in 2009 to evaluate the energy benefits of a sustainable re-roofing technology utilizing standing-seam metalmore » roofing panels combined with energy efficient features like above-sheathing-ventilation (ASV), phase change material (PCM) and rigid insulation board. The data from phases 1 and 2 have been previously published and reported [Kosny et al., 2011; Biswas et al., 2011; Biswas and Childs, 2012; Kosny et al., 2012]. Based on previous data analyses and discussions within the research group, additional test roofs were installed in May 2012, to test new configurations and further investigate different components of the dynamic insulation systems. Some experimental data from phase 3 testing from May 2012 to December 2013 and some EnergyPlus modeling results have been reported in volumes 1 and 3, respectively, of the final report [Biswas et al., 2014; Biswas and Bhandari, 2014].« less

A Novel Light Trapping Phenomenon in Fluid Media.

ERIC Educational Resources Information Center

Devlin, J. C.; Tolles, W. M.

1979-01-01

Describes an experiment on light trapping in thin liquid films. Injection of a thin layer of solution at the boundary of a moving solvent is utilized to create a thin fluid sheet having an index of refraction greater than that of the surrounding medium. (Author/SA)

Pure electronic metal-insulator transition at the interface of complex oxides

DOE PAGES

Meyers, D.; Liu, Jian; Freeland, J. W.; ...

2016-06-21

We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

Utilization of Plasmonic and Photonic Crystal Nanostructures for Enhanced Micro- and Nanoparticle Manipulation

PubMed Central

Simmons, Cameron S.; Knouf, Emily Christine; Tewari, Muneesh; Lin, Lih Y.

2011-01-01

A method to manipulate the position and orientation of submicron particles nondestructively would be an incredibly useful tool for basic biological research. Perhaps the most widely used physical force to achieve noninvasive manipulation of small particles has been dielectrophoresis(DEP).1 However, DEP on its own lacks the versatility and precision that are desired when manipulating cells since it is traditionally done with stationary electrodes. Optical tweezers, which utilize a three dimensional electromagnetic field gradient to exert forces on small particles, achieve this desired versatility and precision.2 However, a major drawback of this approach is the high radiation intensity required to achieve the necessary force to trap a particle which can damage biological samples.3 A solution that allows trapping and sorting with lower optical intensities are optoelectronic tweezers (OET) but OET's have limitations with fine manipulation of small particles; being DEP-based technology also puts constraint on the property of the solution.4,5 This video article will describe two methods that decrease the intensity of the radiation needed for optical manipulation of living cells and also describe a method for orientation control. The first method is plasmonic tweezers which use a random gold nanoparticle (AuNP) array as a substrate for the sample as shown in Figure 1. The AuNP array converts the incident photons into localized surface plasmons (LSP) which consist of resonant dipole moments that radiate and generate a patterned radiation field with a large gradient in the cell solution. Initial work on surface plasmon enhanced trapping by Righini et al and our own modeling have shown the fields generated by the plasmonic substrate reduce the initial intensity required by enhancing the gradient field that traps the particle.6,7,8 The plasmonic approach allows for fine orientation control of ellipsoidal particles and cells with low optical intensities because of more efficient optical energy conversion into mechanical energy and a dipole-dependent radiation field. These fields are shown in figure 2 and the low trapping intensities are detailed in figures 4 and 5. The main problems with plasmonic tweezers are that the LSP's generate a considerable amount of heat and the trapping is only two dimensional. This heat generates convective flows and thermophoresis which can be powerful enough to expel submicron particles from the trap.9,10 The second approach that we will describe is utilizing periodic dielectric nanostructures to scatter incident light very efficiently into diffraction modes, as shown in figure 6.11 Ideally, one would make this structure out of a dielectric material to avoid the same heating problems experienced with the plasmonic tweezers but in our approach an aluminum-coated diffraction grating is used as a one-dimensional periodic dielectric nanostructure. Although it is not a semiconductor, it did not experience significant heating and effectively trapped small particles with low trapping intensities, as shown in figure 7. Alignment of particles with the grating substrate conceptually validates the proposition that a 2-D photonic crystal could allow precise rotation of non-spherical micron sized particles.10 The efficiencies of these optical traps are increased due to the enhanced fields produced by the nanostructures described in this paper. PMID:21988841

Mind the Gap: Summary of Window Residential Retrofit Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petersen, Joseph M.; Cort, Katherine A.; Widder, Sarah H.

Improving the insulation, solar heat gain, and infiltration characteristics of windows in a home has the potential to significantly improve the overall thermal performance by reducing heat transfer through the window and also by decreasing infiltration of outdoor air into the home. As approximately 43% of existing homes still have single-pane clear windows (~50 million houses) and millions of other homes have only double-pane clear windows (Cort 2013), improving window performance also presents a significant opportunity for energy savings in the residential sector. Today, various energy-saving window retrofit opportunities are available to homeowners, ranging from window coverings and storm panelsmore » to highly-insulating triple-pane R-5 window replacements. Many of these technologies have been evaluated in the field, in the “Lab Homes” at Pacific Northwest National Laboratory, and through modeling to prove their cost-effectiveness and performance in different climate regions. Recently, the Pacific Northwest’s Regional Technical Forum approved a utility measure for low- emissivity storm windows based on such data. This action represents a watershed moment for increasing the variety and prevalence of fenestration options in utility programs, especially for the low-income demographic. This paper will review various window retrofit options, the most recent field test and modeling data regarding their performance and cost-effectiveness, and discuss future rating efforts. This information is useful for utilities and energy-efficiency program managers to help effectively implement incentive measures for these technologies.« less

A general, cryogenically-based analytical technique for the determination of trace quantities of volatile organic compounds in the atmosphere

NASA Technical Reports Server (NTRS)

Coleman, R. A.; Cofer, W. R., III; Edahl, R. A., Jr.

1985-01-01

An analytical technique for the determination of trace (sub-ppbv) quantities of volatile organic compounds in air was developed. A liquid nitrogen-cooled trap operated at reduced pressures in series with a Dupont Nafion-based drying tube and a gas chromatograph was utilized. The technique is capable of analyzing a variety of organic compounds, from simple alkanes to alcohols, while offering a high level of precision, peak sharpness, and sensitivity.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Advanced BCD technology with vertical DMOS based on a semi-insulation structure

NASA Astrophysics Data System (ADS)

Kui, Ma; Xinghua, Fu; Jiexin, Lin; Fashun, Yang

2016-07-01

A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. Project supported by the National Natural Science Foundation of China (No. 61464002), the Science and Technology Fund of Guizhou Province (No. Qian Ke He J Zi [2014]2066), and the Dr. Fund of Guizhou University (No. Gui Da Ren Ji He Zi (2013)20Hao).

Efficient disruption of Zebrafish genes using a Gal4-containing gene trap

PubMed Central

2013-01-01

Background External development and optical transparency of embryos make zebrafish exceptionally suitable for in vivo insertional mutagenesis using fluorescent proteins to visualize expression patterns of mutated genes. Recently developed Gene Breaking Transposon (GBT) vectors greatly improve the fidelity and mutagenicity of transposon-based gene trap vectors. Results We constructed and tested a bipartite GBT vector with Gal4-VP16 as the primary gene trap reporter. Our vector also contains a UAS:eGFP cassette for direct detection of gene trap events by fluorescence. To confirm gene trap events, we generated a UAS:mRFP tester line. We screened 270 potential founders and established 41 gene trap lines. Three of our gene trap alleles display homozygous lethal phenotypes ranging from embryonic to late larval: nsf tpl6, atp1a3atpl10 and flrtpl19. Our gene trap cassette is flanked by direct loxP sites, which enabled us to successfully revert nsf tpl6, atp1a3atpl10 and flrtpl19 gene trap alleles by injection of Cre mRNA. The UAS:eGFP cassette is flanked by direct FRT sites. It can be readily removed by injection of Flp mRNA for use of our gene trap alleles with other tissue-specific GFP-marked lines. The Gal4-VP16 component of our vector provides two important advantages over other GBT vectors. The first is increased sensitivity, which enabled us to detect previously unnoticed expression of nsf in the pancreas. The second advantage is that all our gene trap lines, including integrations into non-essential genes, can be used as highly specific Gal4 drivers for expression of other transgenes under the control of Gal4 UAS. Conclusions The Gal4-containing bipartite Gene Breaking Transposon vector presented here retains high specificity for integrations into genes, high mutagenicity and revertibility by Cre. These features, together with utility as highly specific Gal4 drivers, make gene trap mutants presented here especially useful to the research community. PMID:24034702

Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in V2O3

NASA Astrophysics Data System (ADS)

Singer, Andrej; Ramirez, Juan Gabriel; Valmianski, Ilya; Cela, Devin; Hua, Nelson; Kukreja, Roopali; Wingert, James; Kovalchuk, Olesya; Glownia, James M.; Sikorski, Marcin; Chollet, Matthieu; Holt, Martin; Schuller, Ivan K.; Shpyrko, Oleg G.

2018-05-01

Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V2O3 . Despite the ultrafast increase in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale twin domains govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the nonequilibrium structural phases play during electronic phase transitions in correlated electrons systems.

Solid-state microrefrigerator

DOEpatents

Ullom, Joel N.

2003-06-24

A normal-insulator-superconductor (NIS) microrefrigerator in which a superconducting single crystal is both the substrate and the superconducting electrode of the NIS junction. The refrigerator consists of a large ultra-pure superconducting single crystal and a normal metal layer on top of the superconducting crystal, separated by a thin insulating layer. The superconducting crystal can be either cut from bulk material or grown as a thick epitaxial film. The large single superconducting crystal allows quasiparticles created in the superconducting crystal to easily diffuse away from the NIS junction through the lattice structure of the crystal to normal metal traps to prevent the quasiparticles from returning across the NIS junction. In comparison to thin film NIS refrigerators, the invention provides orders of magnitude larger cooling power than thin film microrefrigerators. The superconducting crystal can serve as the superconducting electrode for multiple NIS junctions to provide an array of microrefrigerators. The normal electrode can be extended and supported by microsupports to provide support and cooling of sensors or arrays of sensors.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Molecular chaperone TRAP1 regulates a metabolic switch between mitochondrial respiration and aerobic glycolysis

PubMed Central

Yoshida, Soichiro; Tsutsumi, Shinji; Muhlebach, Guillaume; Sourbier, Carole; Lee, Min-Jung; Lee, Sunmin; Vartholomaiou, Evangelia; Tatokoro, Manabu; Beebe, Kristin; Miyajima, Naoto; Mohney, Robert P.; Chen, Yang; Hasumi, Hisashi; Xu, Wanping; Fukushima, Hiroshi; Nakamura, Ken; Koga, Fumitaka; Kihara, Kazunori; Trepel, Jane; Picard, Didier; Neckers, Leonard

2013-01-01

TRAP1 (TNF receptor-associated protein), a member of the HSP90 chaperone family, is found predominantly in mitochondria. TRAP1 is broadly considered to be an anticancer molecular target. However, current inhibitors cannot distinguish between HSP90 and TRAP1, making their utility as probes of TRAP1-specific function questionable. Some cancers express less TRAP1 than do their normal tissue counterparts, suggesting that TRAP1 function in mitochondria of normal and transformed cells is more complex than previously appreciated. We have used TRAP1-null cells and transient TRAP1 silencing/overexpression to show that TRAP1 regulates a metabolic switch between oxidative phosphorylation and aerobic glycolysis in immortalized mouse fibroblasts and in human tumor cells. TRAP1-deficiency promotes an increase in mitochondrial respiration and fatty acid oxidation, and in cellular accumulation of tricarboxylic acid cycle intermediates, ATP and reactive oxygen species. At the same time, glucose metabolism is suppressed. TRAP1-deficient cells also display strikingly enhanced invasiveness. TRAP1 interaction with and regulation of mitochondrial c-Src provide a mechanistic basis for these phenotypes. Taken together with the observation that TRAP1 expression is inversely correlated with tumor grade in several cancers, these data suggest that, in some settings, this mitochondrial molecular chaperone may act as a tumor suppressor. PMID:23564345

Determinants of Chromosome Architecture: Insulator Pairing in cis and in trans

PubMed Central

Fujioka, Miki; Mistry, Hemlata; Schedl, Paul; Jaynes, James B.

2016-01-01

The chromosomes of multicellular animals are organized into a series of topologically independent looped domains. This domain organization is critical for the proper utilization and propagation of the genetic information encoded by the chromosome. A special set of architectural elements, called boundaries or insulators, are responsible both for subdividing the chromatin into discrete domains and for determining the topological organization of these domains. Central to the architectural functions of insulators are homologous and heterologous insulator:insulator pairing interactions. The former (pairing between copies of the same insulator) dictates the process of homolog alignment and pairing in trans, while the latter (pairing between different insulators) defines the topology of looped domains in cis. To elucidate the principles governing these architectural functions, we use two insulators, Homie and Nhomie, that flank the Drosophila even skipped locus. We show that homologous insulator interactions in trans, between Homie on one homolog and Homie on the other, or between Nhomie on one homolog and Nhomie on the other, mediate transvection. Critically, these homologous insulator:insulator interactions are orientation-dependent. Consistent with a role in the alignment and pairing of homologs, self-pairing in trans is head-to-head. Head-to-head self-interactions in cis have been reported for other fly insulators, suggesting that this is a general principle of self-pairing. Homie and Nhomie not only pair with themselves, but with each other. Heterologous Homie-Nhomie interactions occur in cis, and we show that they serve to delimit a looped chromosomal domain that contains the even skipped transcription unit and its associated enhancers. The topology of this loop is defined by the heterologous pairing properties of Homie and Nhomie. Instead of being head-to-head, which would generate a circular loop, Homie-Nhomie pairing is head-to-tail. Head-to-tail pairing in cis generates a stem-loop, a configuration much like that observed in classical lampbrush chromosomes. These pairing principles provide a mechanistic underpinning for the observed topologies within and between chromosomes. PMID:26910731

Birth of the Four-Day Work Week.

ERIC Educational Resources Information Center

Hellyer, Lyle

Indian Hills Community College, faced with rising utility bills dues to inadequate insulation in the campus's older buildings, now utilizes a four-day week during the winter quarter as an energy conservation measure. Planning for the implementation of the four-day week, which began in 1976, was coordinated by an overall energy committee made up of…

Delocalized metallic state on insulating, disordered BiSbTeSe2 thin films - a test of Z2 protection.

NASA Astrophysics Data System (ADS)

Gopal, Rk; Singh, Sourabh; Sarkar, Jit; Patro, Reshma; Roy, Subhadip; Mitra, Chiranjib; Quantum computation; Topological matter Group Team

We present thickness and temperature dependent magneto transport properties of bulk insulating and granular BiSbTeSe2 thin films, grown by pulsed laser deposition technique. The temperature dependent resistivity (R-T) of these films is found to be insulating (d ρ/dT <0) and resistivity changes thrice the magnitude measured at room temperature as temperature is varied from 300K to 1.8K. On application of small perpendicular magnetic field in the low temperature regime, the R-T takes an upward shift from the zero field R-T - a trademark signature of a metallic state on an insulating bulk film. The grain boundaries in these films, as seen by scanning electron microscopy, present an additional disorder and hence confinement/trapping centers to the surface Dirac states in comparison to the films grown by molecular beam epitaxy and single crystals, which have atomically flat surface. Therefore these films present real test for the topological protection of surface Dirac states and their immunity against localization which is known as Z2 protection. From the magnetoresistance (MR) measurements at low temperatures a sharp and relatively large rise in MR is found a signature of weak - antilocalization (WAL) -a signature of topologically protected surface states. The WAL analysis of the MR data reveals a phase breaking length of the order of grain size suggesting that grain Author is grateful to the Government of India and IISER-Kolkata for providing funding and experimental facilities for the following research work.

Evaluation of Propane Combustion Traps for the Collection of Phlebotomus papatasi (Scopoli) in Southern Israel

DTIC Science & Technology

2011-03-01

traps for the consumer market , which utilize the combustion of propane to produce carbon dioxide (CO2) and other attractants. While these...Z. Abramsky, B.P. Kotler , R.S. Ostfeld, I.Yarom, and A.Warburg. 2003a. Anthropogenic disturbances enhance occurrence of cutaneous

Composite Behavior of Insulated Concrete Sandwich Wall Panels Subjected to Wind Pressure and Suction.

PubMed

Choi, Insub; Kim, JunHee; Kim, Ho-Ryong

2015-03-19

A full-scale experimental test was conducted to analyze the composite behavior of insulated concrete sandwich wall panels (ICSWPs) subjected to wind pressure and suction. The experimental program was composed of three groups of ICSWP specimens, each with a different type of insulation and number of glass-fiber-reinforced polymer (GFRP) shear grids. The degree of composite action of each specimen was analyzed according to the load direction, type of the insulation, and number of GFRP shear grids by comparing the theoretical and experimental values. The failure modes of the ICSWPs were compared to investigate the effect of bonds according to the load direction and type of insulation. Bonds based on insulation absorptiveness were effective to result in the composite behavior of ICSWP under positive loading tests only, while bonds based on insulation surface roughness were effective under both positive and negative loading tests. Therefore, the composite behavior based on surface roughness can be applied to the calculation of the design strength of ICSWPs with continuous GFRP shear connectors.

Excavationless Exterior Foundation Insulation Field Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schirber, T.; Mosiman, G.; Ojczyk, C.

Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. However, such an approach can be very costly and disruptive when applied to an existing home, requiring deep excavation around the entire house. The NorthernSTAR Building America Partnership team implemented an innovative, minimally invasive foundation insulation upgrade technique on an existing home. The approach consisted of using hydrovac excavation technology combined with a liquidmore » insulating foam. The team was able to excavate a continuous 4" wide by 4' to 5' deep trench around the entire house, 128 linear feet, except for one small part under the stoop that was obstructed with concrete debris. The combination pressure washer and vacuum extraction technology also enabled the elimination of large trenches and soil stockpiles normally produced by backhoe excavation. The resulting trench was filled with liquid insulating foam, which also served as a water-control layer of the assembly. The insulation was brought above grade using a liquid foam/rigid foam hybrid system and terminated at the top of the rim joist. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features, utility meters, and landscaping would be minimal or non-existent in an excavationless process.« less

Tunable inverse topological heterostructure utilizing ( B i 1 - x I n x ) 2 S e 3 and multichannel weak-antilocalization effect

DOE PAGES

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; ...

2016-03-10

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary themore » thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less

Glass Bubbles Insulation for Liquid Hydrogen Storage Tanks

NASA Technical Reports Server (NTRS)

Sass, J. P.; SaintCyr, W. W.; Barrett, T. M.; Baumgartner, R. G.; Lott, J. W.; Fesmire, J. E.

2009-01-01

A full-scale field application of glass bubbles insulation has been demonstrated in a 218,000 L liquid hydrogen storage tank. This work is the evolution of extensive materials testing, laboratory scale testing, and system studies leading to the use of glass bubbles insulation as a cost efficient and high performance alternative in cryogenic storage tanks of any size. The tank utilized is part of a rocket propulsion test complex at the NASA Stennis Space Center and is a 1960's vintage spherical double wall tank with an evacuated annulus. The original perlite that was removed from the annulus was in pristine condition and showed no signs of deterioration or compaction. Test results show a significant reduction in liquid hydrogen boiloff when compared to recent baseline data prior to removal of the perlite insulation. The data also validates the previous laboratory scale testing (1000 L) and full-scale numerical modeling (3,200,000 L) of boiloff in spherical cryogenic storage tanks. The performance of the tank will continue to be monitored during operation of the tank over the coming years. KEYWORDS: Glass bubble, perlite, insulation, liquid hydrogen, storage tank.

Combined acoustic and optical trapping

PubMed Central

Thalhammer, G.; Steiger, R.; Meinschad, M.; Hill, M.; Bernet, S.; Ritsch-Marte, M.

2011-01-01

Combining several methods for contact free micro-manipulation of small particles such as cells or micro-organisms provides the advantages of each method in a single setup. Optical tweezers, which employ focused laser beams, offer very precise and selective handling of single particles. On the other hand, acoustic trapping with wavelengths of about 1 mm allows the simultaneous trapping of many, comparatively large particles. With conventional approaches it is difficult to fully employ the strengths of each method due to the different experimental requirements. Here we present the combined optical and acoustic trapping of motile micro-organisms in a microfluidic environment, utilizing optical macro-tweezers, which offer a large field of view and working distance of several millimeters and therefore match the typical range of acoustic trapping. We characterize the acoustic trapping forces with the help of optically trapped particles and present several applications of the combined optical and acoustic trapping, such as manipulation of large (75 μm) particles and active particle sorting. PMID:22025990

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Use of in vivo Expression Technology for the Identification of Putative Host Adaptation Factors of the Lyme Disease Spirochete.

PubMed

Casselli, Timothy; Bankhead, Troy

2015-01-01

The causative agent of Lyme disease, Borrelia burgdorferi, is an obligate parasite that requires either a tick vector or a mammalian host for survival. Identification of the bacterial genes that are specifically expressed during infection of the mammalian host could provide targets for novel therapeutics and vaccines. In vivo expression technology (IVET) is a reporter-based promoter trap system that utilizes selectable markers to identify promoters of bacterial host-specific genes. Using previously characterized genes for in vivo and in vitro selection, this study utilized an IVET system that allows for selection of B. burgdorferi sequences that act as active promoters only during murine infection. This promoter trap system was able to successfully distinguish active promoter sequences both in vivo and in vitro from control sequences and a library of cloned B. burgdorferi genomic fragments. However, a bottleneck effect during the experimental mouse infection limited the utility for genome-wide promoter screening. Overall, IVET was demonstrated as a tool for the identification of in vivo-induced promoter elements of B. burgdorferi, and the observed infection bottleneck apparent using a polyclonal infection pool provides insight into the dynamics of experimental infection with B. burgdorferi. © 2015 S. Karger AG, Basel.

Photoresponse of polyaniline-functionalized graphene quantum dots

NASA Astrophysics Data System (ADS)

Lai, Sin Ki; Luk, Chi Man; Tang, Libin; Teng, Kar Seng; Lau, Shu Ping

2015-03-01

Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics.Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics. Electronic supplementary information (ESI) available: Raman spectrum of PANI-GQD, TGA, Red-shift of PL peak with the amounts of aniline, excitation dependent PL of PANI-GQD, area of hysteretic loop for different voltage scan ranges, photocurrent at 1 V under prolonged illumination. See DOI: 10.1039/c4nr07565j

Thermal Insulation Strips Conserve Energy

NASA Technical Reports Server (NTRS)

2009-01-01

Launching the space shuttle involves an interesting paradox: While the temperatures inside the shuttle s main engines climb higher than 6,000 F hot enough to boil iron for fuel, the engines use liquid hydrogen, the second coldest liquid on Earth after liquid helium. Maintained below 20 K (-423 F), the liquid hydrogen is contained in the shuttle s rust-colored external tank. The external tank also contains liquid oxygen (kept below a somewhat less chilly 90 K or -297 F) that combines with the hydrogen to create an explosive mixture that along with the shuttle s two, powdered aluminum-fueled solid rocket boosters allows the shuttle to escape Earth s gravity. The cryogenic temperatures of the main engines liquid fuel can cause ice, frost, or liquefied air to build up on the external tank and other parts of the numerous launch fueling systems, posing a possible debris risk when the ice breaks off during launch and causing difficulties in the transfer and control of these cryogenic liquid propellants. Keeping the fuel at the necessary ultra-cold temperatures while minimizing ice buildup and other safety hazards, as well as reducing the operational maintenance costs, has required NASA to explore innovative ways for providing superior thermal insulation systems. To address the challenge, the Agency turned to an insulating technology so effective that, even though it is mostly air, a thin sheet can prevent a blowtorch from igniting a match. Aerogels were invented in 1931 and demonstrate properties that make them the most extraordinary insulating materials known; a 1-inch-thick piece of aerogel provides the same insulation as layering 15 panes of glass with air pockets in between. Derived from silica, aluminum oxide, or carbon gels using a supercritical drying process - resulting in a composition of almost 99-percent air - aerogels are the world s lightest solid (among 15 other titles they hold in the Guinness World Records), can float indefinitely on water if treated to be hydrophobic, and can withstand extremely hot temperatures (from 1,100 F to 3,000 F depending on the type of aerogel) down to cryogenic levels, making this "frozen smoke" ideal for use in space. Because of its low weight and ability to withstand temperature extremes, an aerogel was even used as the space-based catcher s mitt to trap comet particles and space dust for NASA s Stardust mission, launched in 1999. All of this remarkable technology s characteristics were ideal for NASA s purposes except one: The aerogels were extremely brittle. Through a long-term partnership between Kennedy Space Center and Aspen Aerogels Inc., of Northborough, Massachusetts, researchers developed a flexible, durable form of aerogel that NASA has since used as cryogenic insulation for space shuttle launch systems. Through Aspen Aerogels, the technology has made oil pipeline insulation, extreme weather clothing, and infrared shielding for combat helicopters.

Quantitative telomerase enzyme activity determination using droplet digital PCR with single cell resolution.

PubMed

Ludlow, Andrew T; Robin, Jerome D; Sayed, Mohammed; Litterst, Claudia M; Shelton, Dawne N; Shay, Jerry W; Wright, Woodring E

2014-07-01

The telomere repeat amplification protocol (TRAP) for the human reverse transcriptase, telomerase, is a PCR-based assay developed two decades ago and is still used for routine determination of telomerase activity. The TRAP assay can only reproducibly detect ∼ 2-fold differences and is only quantitative when compared to internal standards and reference cell lines. The method generally involves laborious radioactive gel electrophoresis and is not conducive to high-throughput analyzes. Recently droplet digital PCR (ddPCR) technologies have become available that allow for absolute quantification of input deoxyribonucleic acid molecules following PCR. We describe the reproducibility and provide several examples of a droplet digital TRAP (ddTRAP) assay for telomerase activity, including quantitation of telomerase activity in single cells, telomerase activity across several common telomerase positive cancer cells lines and in human primary peripheral blood mononuclear cells following mitogen stimulation. Adaptation of the TRAP assay to digital format allows accurate and reproducible quantification of the number of telomerase-extended products (i.e. telomerase activity; 57.8 ± 7.5) in a single HeLa cell. The tools developed in this study allow changes in telomerase enzyme activity to be monitored on a single cell basis and may have utility in designing novel therapeutic approaches that target telomerase. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

NASA Astrophysics Data System (ADS)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Electrically Detected Study of Variable Range Hopping in Silicon Nitrides

NASA Astrophysics Data System (ADS)

Waskiewicz, Ryan; Mutch, Michael; Lenahan, Patrick; King, Sean

Electrically detected magnetic resonance (EDMR) offers greatly improved sensitivity over conventional electron paramagnetic resonance (EPR) studies in semiconductor/insulator systems; in EDMR measurements, one observes EPR via changes in device currents which are spin-dependent. In our study, we observe EDMR via spin-dependent trap assisted tunneling (SDTAT) via variable range hopping (VRH) through stoichiometric silicon nitride dielectric films. In these films, leakage current effectively changes at resonance. In our study, we have investigated the EDMR response as a function of dielectric electric field and temperature for films of various thicknesses. We believe that these measurements allow us to identify the defects responsible for transport in such these thin films using EDMR and to some extent measure the distances between the defects. The separation between the defects can, at least in principle, be measured using the recently demonstrated half-field EDMR response and we can also count total number of spins responsible for transport through dielectric films. Although we present results only on silicon nitride thin films, we believe that the approach utilized will be widely applicable to other dielectric films in which electronic transport is of interest. This project is sponsored in part by Intel Corporation and in part by the Department of Defense, Defense Threat Reduction Agency under Grant Number HDTRA1-16-0008.

A three-mask process for fabricating vacuum-sealed capacitive micromachined ultrasonic transducers using anodic bonding.

PubMed

Yamaner, F Yalçın; Zhang, Xiao; Oralkan, Ömer

2015-05-01

This paper introduces a simplified fabrication method for vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT) arrays using anodic bonding. Anodic bonding provides the established advantages of wafer-bondingbased CMUT fabrication processes, including process simplicity, control over plate thickness and properties, high fill factor, and ability to implement large vibrating cells. In addition to these, compared with fusion bonding, anodic bonding can be performed at lower processing temperatures, i.e., 350°C as opposed to 1100°C; surface roughness requirement for anodic bonding is more than 10 times more relaxed, i.e., 5-nm rootmean- square (RMS) roughness as opposed to 0.5 nm for fusion bonding; anodic bonding can be performed on smaller contact area and hence improves the fill factor for CMUTs. Although anodic bonding has been previously used for CMUT fabrication, a CMUT with a vacuum cavity could not have been achieved, mainly because gas is trapped inside the cavities during anodic bonding. In the approach we present in this paper, the vacuum cavity is achieved by opening a channel in the plate structure to evacuate the trapped gas and subsequently sealing this channel by conformal silicon nitride deposition in the vacuum environment. The plate structure of the fabricated CMUT consists of the single-crystal silicon device layer of a silicon-on-insulator wafer and a thin silicon nitride insulation layer. The presented fabrication approach employs only three photolithographic steps and combines the advantages of anodic bonding with the advantages of a patterned metal bottom electrode on an insulating substrate, specifically low parasitic series resistance and low parasitic shunt capacitance. In this paper, the developed fabrication scheme is described in detail, including process recipes. The fabricated transducers are characterized using electrical input impedance measurements in air and hydrophone measurements in immersion. A representative design is used to demonstrate immersion operation in conventional, collapse-snapback, and collapse modes. In collapsemode operation, an output pressure of 1.67 MPa pp is shown at 7 MHz on the surface of the transducer for 60-Vpp, 3-cycle sinusoidal excitation at 30-V dc bias.

Utilization of low temperatures in electrical machines

NASA Astrophysics Data System (ADS)

Kwasniewska-Jankowicz, L.; Mirski, Z.

1983-09-01

The dimensions of conventional and superconducting direct and alternating current generators are compared and the advantages of using superconducting magnets are examined. The critical temperature, critical current, and critical magnetic field intensity of superconductors in an induction winding are discussed as well as the mechanical properties needed for bending connectors at small radii. Investigations of cryogenic cooling, cryostats, thermal insulation and rotary seals are reported as well as results of studies of the mechanical properties of austenitic Cr-Ni steels, welded joints and plastics for insulation.

A Non Rigid Reusable Surface Insulation Concept for the Space Shuttle Thermal Protection System

NASA Technical Reports Server (NTRS)

Alexander, J. G.

1973-01-01

A reusable thermal protection system concept was developed for the space shuttle that utilizes a flexible, woven ceramic mat insulation beneath an aerodynamic skin and moisture barrier consisting of either a dense ceramic coating or a super alloy metallic foil. The resulting heat shield material has unique structural characteristics. The shear modulus of the woven mat is very low such that bending and membrane loads introduced into the underlying structural panel remain isolated from the surface skin.

Controlled modulation of hard and soft X-ray induced tunneling currents utilizing coaxial metal-insulator-metal probe tips

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cummings, Marvin; Shirato, Nozomi; Kersell, Heath

Here, the effect of a local external electric field on the barrier potential of a tunneling gap is studied utilizing an emerging technique, synchrotron x-ray scanning tunneling microscopy. Here, we demonstrate that the shape of the potential barrier in the tunneling gap can be altered by a localized external electric field, generated by voltages placed on the metallic outer shield of a nanofabricated coaxial metal-insulator-metal tip, resulting in a controlled linear modulation of the tunneling current. Experiments at hard and soft x-ray synchrotron beamlines reveal that both the chemical contrast and magnetic contrast signals measured by the tip can bemore » drastically enhanced, resulting in improved local detection of chemistry and magnetization at the surface.« less

Controlled modulation of hard and soft X-ray induced tunneling currents utilizing coaxial metal-insulator-metal probe tips

DOE PAGES

Cummings, Marvin; Shirato, Nozomi; Kersell, Heath; ...

2017-01-05

Here, the effect of a local external electric field on the barrier potential of a tunneling gap is studied utilizing an emerging technique, synchrotron x-ray scanning tunneling microscopy. Here, we demonstrate that the shape of the potential barrier in the tunneling gap can be altered by a localized external electric field, generated by voltages placed on the metallic outer shield of a nanofabricated coaxial metal-insulator-metal tip, resulting in a controlled linear modulation of the tunneling current. Experiments at hard and soft x-ray synchrotron beamlines reveal that both the chemical contrast and magnetic contrast signals measured by the tip can bemore » drastically enhanced, resulting in improved local detection of chemistry and magnetization at the surface.« less

Infrared-thermography imaging system multiapplications for manufacturing

NASA Astrophysics Data System (ADS)

Stern, Sharon A.

1990-03-01

Imaging systems technology has been utilized traditionally for diagnosing structural envelope or insulation problems in the general thermographic comunity. Industrially, new applications for utilizing thermal imaging technology have been developed i n pred i cti ve/preventi ye mai ntenance and prod uct moni tori ng prociures at Eastman Kodak Company, the largest photographic manufacturering producer in the world. In the manufacturing processes used at Eastman Kodak Company, new applications for thermal imaging include: (1) Fluid transfer line insulation (2) Web coating drying uniformity (3) Web slitter knives (4) Heating/cooling coils (5) Overheated tail bearings, and (6) Electrical phase imbalance. The substantial cost benefits gained from these applications of infrared thermography substantiate the practicality of this approach and indicate the desirability of researching further appl i cati ons.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

PubMed

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-08-02

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

PubMed Central

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-01-01

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

An application area of C60: Overall improvement of insulating oil's electrical performance

NASA Astrophysics Data System (ADS)

Sun, Potao; Sima, Wenxia; Chen, Jiaqi; Zhang, Dingfei; Jiang, Xiongwei; Chen, Qiulin

2018-04-01

We prepared nano-C60 based insulating oil, which has the potential to overcome the application barriers of nanomodified insulating oil. We find that nano-C60 based insulating oil has an excellent stability. Its electrical performance increases by 17.9%, 9.3%, and 8.3% for AC and positive/negative lightning impulse voltage, respectively. We believe that C60 molecules have a strong capacity to absorb electrons and can capture photons in a streamer, which may weaken photoionization in the streamer and thereby improve the electrical performance of insulating oil.

Manipulation of cells' position across a microfluidic channel using a series of continuously varying herringbone structures

NASA Astrophysics Data System (ADS)

Jung, Yugyung; Hyun, Ji-chul; Choi, Jongchan; Atajanov, Arslan; Yang, Sung

2017-12-01

Controlling cells' movement is an important technique in biological analysis that is performed within a microfluidic system. Many external forces are utilized for manipulation of cells, including their position in the channel. These forces can effectively control cells in a desired manner. Most of techniques used to manipulate cells require sophisticated set-ups and equipment to generate desired effect. The exception to this is the use of hydrodynamic force. In this study, a series of continuously varying herringbone structures is proposed for positioning cells in a microfluidic channel using hydrodynamic force. This structure was experimentally developed by changing parameters, such as the length of the herringbone's apex, the length of the herringbone's base and the ratio of the height of the flat channel to the height of the herringbone structure. Results of this study, have demonstrated that the length of the herringbone's apex and the ratio of the heights of the flat channel and the herringbone structure were crucial parameters influencing positioning of cells at 100 μl/h flow rate. The final design was fixed at 170 and 80 μm for the length of herringbone's apex and the length of herringbone's base, respectively. The average position of cells in this device was 34 μm away from the side wall in a 200 μm wide channel. Finally, to substantiate a practical application of the herringbone structure for positioning, cells were randomly introduced into a microfluidic device, containing an array of trapping structures together with a series of herringbone structures along the channel. The cells were moved toward the trapping structure by the herringbone structure and the trapping efficiency was increased. Therefore, it is anticipated that this device will be utilized to continuously control cells' position without application of external forces.

Moisture Durability with Vapor-Permeable Insulating Sheathing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lepage, R.; Lstiburek, J.

2013-09-01

Exterior sheathing insulation is an effective strategy in increasing the overall R-value of wall assemblies; other benefits include decreasing the effects of thermal bridging and increasing the moisture durability of the built assembly. Vapor-permeable exterior insulation, such as mineral board or expanded polystyrene foam, are one such product that may be used to achieve these benefits. However,uncertainty exists on the effects of inward driven moisture and the interaction of increased sheathing temperatures on the moisture durability of the edifice. To address these concerns, Building Science Corporation (BSC) conducted a series of hygrothermal models for cities representing a range of differentmore » climate zones. This report describes the research project, key research questions, and theprocedures utilized to analyse the problems.« less

Moisture Durability with Vapor-Permeable Insulating Sheathing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lepage, R.; Lstiburek, J.

2013-09-01

Exterior sheathing insulation is an effective strategy in increasing the overall R-value of wall assemblies; other benefits include decreasing the effects of thermal bridging and increasing the moisture durability of the built assembly. Vapor-permeable exterior insulation, such as mineral board or expanded polystyrene foam, are one such product that may be used to achieve these benefits. However, uncertainty exists on the effects of inward driven moisture and the interaction of increased sheathing temperatures on the moisture durability of the edifice. To address these concerns, Building Science Corporation (BSC) conducted a series of hygrothermal models for cities representing a range ofmore » different climate zones. This report describes the research project, key research questions, and the procedures utilized to analyse the problems.« less

The House that NASA Built

NASA Technical Reports Server (NTRS)

1977-01-01

Tech House, located at NASA's Langley Research Center, Hampton, Virginia, is a demonstration project in which aerospace and commercial building technology are combined to produce an energy-efficient home. Advanced technology offers savings to the family in utility costs and energy conservation. Solar panels on the roof of tech house provide the principal energy saving. They capture the sun's rays to heat water in pipes that run through the solar collectors. The heated water is then stored in a large, well insulated underground tank. A heat exchanger extracts beat from the water and blows it through ducts to warm the house. Tech House is well insulated for energy savings. The principal insulation is fireproof Tripolymer foam which is sprayed onto walls and ceilings in thicknesses up to six inches.

Three-Dimensional Models of Topological Insulators: Engineering of Dirac Cones and Robustness of the Spin Texture

NASA Astrophysics Data System (ADS)

Soriano, David; Ortmann, Frank; Roche, Stephan

2012-12-01

We design three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones driven by the atomic-scale geometry at the boundaries. A single Dirac cone at the Γ-point can be obtained as well as full suppression of quantum tunneling between Dirac states at geometrically differentiated surfaces. The spin texture of surface states changes from a spin-momentum-locking symmetry to a surface spin randomization upon the introduction of bulk disorder. These findings illustrate the richness of the Dirac physics emerging in thin films of topological insulators and may prove utile for engineering Dirac cones and for quantifying bulk disorder in materials with ultraclean surfaces.

Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices

NASA Astrophysics Data System (ADS)

Chen, Chun-Yuan; Chou, Jung-Chuan; Chou, Hsueh-Tao

2009-04-01

In this paper, we present a novel sensitive ion-sensitive field-effect transistor (ISFET) membrane based on Ba0.7Sr0.3TiO3 (BST)/SiO2 fabricated by sputtering deposition. The proposed device exhibits a linear shift in acidic solutions in the pH range from 1 to 10. The device sensitivity was about 50-55 mV/pH for different deposition times. We also examined the trapping behavior of the surface hydrated layer using the metal-insulator-semiconductor (MIS) structure. Results show that the hydration layer gives rise to stress polarity dependence of electron injection when immersed in pH buffer solutions. Injection from the gate electrode produces larger positive charges and interface state densities in contrast to the substrate injection, which causes simultaneous positive and negative charge trapping. A physical model that quantitatively describes the asymmetry associated with the hydrated diffusion layer is presented, and the temperature effects of BST/SiO2 ISFET devices in the range from 25 to 65 °C were examined. We observed that pH sensitivity increases with increasing temperature. The temperature coefficient of sensitivity (TCS) can be divided into two different ranges: 0.08 mV/pH °C between 25 and 45 °C, and 0.57 mV/pH °C between 45 and 65 °C. A better thermal stability is produced in the 25 and 45 °C range in comparison with other sensitive layers.

Ion traps for precision experiments at rare-isotope-beam facilities

NASA Astrophysics Data System (ADS)

Kwiatkowski, Anna

2016-09-01

Ion traps first entered experimental nuclear physics when the ISOLTRAP team demonstrated Penning trap mass spectrometry of radionuclides. From then on, the demand for ion traps has grown at radioactive-ion-beam (RIB) facilities since beams can be tailored for the desired experiment. Ion traps have been deployed for beam preparation, from bunching (thereby allowing time coincidences) to beam purification. Isomerically pure beams needed for nuclear-structure investigations can be prepared for trap-assisted or in-trap decay spectroscopy. The latter permits studies of highly charged ions for stellar evolution, which would be impossible with traditional experimental nuclear-physics methods. Moreover, the textbook-like conditions and advanced ion manipulation - even of a single ion - permit high-precision experiments. Consequently, the most accurate and precise mass measurements are now performed in Penning traps. After a brief introduction to ion trapping, I will focus on examples which showcase the versatility and utility of the technique at RIB facilities. I will demonstrate how this atomic-physics technique has been integrated into nuclear science, accelerator physics, and chemistry. DOE.